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  Boron-doped diamond semiconductorUSPTO Application #: 20060163584Title: Boron-doped diamond semiconductor Abstract: First and second synthetic diamond regions are doped with boron. The second synthetic diamond region is doped with boron to a greater degree than the first synthetic diamond region, and in physical contact with the first synthetic diamond region. In a further example embodiment, the first and second synthetic diamond regions form a diamond semiconductor, such as a Schottky diode when attached to at least one metallic lead. (end of abstract) Agent: Schwegman, Lundberg, Woessner & Kluth, P.A. - Minneapolis, MN, US Inventor: Robert Linares USPTO Applicaton #: 20060163584 - Class: 257077000 (USPTO) Related Patent Categories: Active Solid-state Devices (e.g., Transistors, Solid-state Diodes), Specified Wide Band Gap (1.5ev) Semiconductor Material Other Than Gaasp Or Gaalas, Diamond Or Silicon Carbide The Patent Description & Claims data below is from USPTO Patent Application 20060163584. Brief Patent Description - Full Patent Description - Patent Application Claims
FIELD OF THE INVENTION [0001] The invention relates generally to diamond fabrication, and more specifically to fabricating boron-doped diamond semiconductor devices. BACKGROUND OF THE INVENTION [0002] A wide variety of semiconductor devices are used as basic electronic building blocks to form electronic devices from computers to cellular telephones, home entertainment systems, and automobile control systems. Other devices use semiconductors for purposes not related to computing or processing power, such as audio amplifiers, industrial control systems, and for other such purposes. [0003] Modern semiconductors are typically based on silicon, with various elements doped to change their electrical properties. For example, doping silicon with phosphorous creates a surplus of electrons resulting in n-type semiconductor material due to the fifth valence electron not present in silicon, which has only four valence electrons. Similarly, doping silicon with boron creates p-type silicon having a surplus of "holes", or an absence of electrons, because boron has only three valence electrons which is one fewer than silicon. [0004] When n-type and p-type silicon are in contact with one another, electricity flows in one direction across the junction more easily than in the other direction. More complex configurations of n-type and p-type material can be assembled to form various types of transistors, integrated circuits, and other such devices. [0005] But, the performance of certain semiconductor devices is limited by the properties inherent in the semiconductor materials used. For example, a processor's speed is limited by the amount of power that can be dissipated in the transistors and other devices that make up the processor integrated circuit, which can literally melt if operated too fast. Reduction in size is also limited, because as more transistors dissipating a certain amount of power are packed into a smaller area, the amount of heat dissipated in a certain area increases. Even simple devices such as diodes used in high-frequency, high-power applications suffer from power limitations, since the physical size of an individual transistor or diode is typically very small. [0006] Semiconductor devices enabling greater power dissipation and higher semiconductor device densities are desirable to provide higher performance, smaller electrical devices. SUMMARY [0007] The present invention provides in one example embodiment first and second synthetic diamond regions doped with boron. The second synthetic diamond region is doped with boron to a greater degree than the first synthetic diamond region, and in physical contact with the first synthetic diamond region. In a further example embodiment, the first and second synthetic diamond regions form a diamond semiconductor, such as a Schottky diode. BRIEF DESCRIPTION OF THE FIGURES [0008] FIG. 1 shows a boron-doped diamond seed crystal with a hydrogen ion implant layer, consistent with an example embodiment of the present invention. [0009] FIG. 2 shows a boron-doped diamond seed crystal with grown boron-doped diamond, consistent with an example embodiment of the present invention. [0010] FIG. 3 shows a boron-doped diamond seed crystal with grown diamond separated at a hydrogen implant level, consistent with an example embodiment of the present invention. [0011] FIG. 4 shows a Schottky diode formed from the boron-doped diamond seed crystal with grown boron-doped diamond, consistent with an example embodiment of the present invention. [0012] FIG. 5 shows a method of forming a boron-doped diamond semiconductor, consistent with an example embodiment of the present invention. [0013] FIG. 6 shows an integrated circuit having first and second boron-doped diamond semiconductor regions, consistent with an example embodiment of the present invention. [0014] FIG. 7 shows an electronic device utilizing a boron-doped diamond semiconductor, consistent with an example embodiment of the present invention. DETAILED DESCRIPTION [0015] In the following detailed description of example embodiments of the invention, reference is made to the accompanying drawings which form a part hereof, and in which is shown by way of illustration specific sample embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention, and it is to be understood that other embodiments may be utilized and that logical, mechanical, electrical, and other changes may be made without departing from the substance or scope of the present invention. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the invention is defined only by the appended claims. [0016] One example of the invention provides first and second synthetic diamond regions doped with boron. The second synthetic diamond region is doped with boron to a greater degree than the first synthetic diamond region, and in physical contact with the first synthetic diamond region. In a further example embodiment, the first and second synthetic diamond regions form a diamond semiconductor, such as a Schottky diode. [0017] FIGS. 1-4 illustrate a method of producing a monocrystalline synthetic diamond Schottky diode, which is one example of a diamond semiconductor device such as can be produced using the present invention. FIG. 1 illustrates a diamond seed crystal that is heavily doped with boron, which has only three valence electrons relative to carbon's four valence electrons, making the diamond a strongly p-type semiconductor material. The absence of electrons in sites in the diamond that contain boron leaves a "hole" that is receptive to electrons, making what is in effect a mobile positive charge. The negatively charged boron atom is fixed in the diamond lattice, meaning that the boron atoms cannot move but contribute holes as electron receptors to the electrical conduction process. [0018] In some examples, the boron is grown into the diamond as the diamond is formed by chemical vapor deposition or via another process, while other examples use ion implantation to implant boron into diamond, whether the diamond is synthetic or naturally occurring. The diamond contains boron doping through at least a top region of the seed diamond 101 extending a half micron to a few microns, such that a top layer has a relatively uniform distribution of boron atoms distributed to a desired density. [0019] The seed 101 is polished to have a flat top surface, and the edges of the seed are trimmed such as with a laser or cutting tool, and are cleaned, etched, and polished. Hydrogen atoms are then implanted to a desired depth, as is shown in FIG. 1 at 102. The hydrogen atoms are implanted under various conditions in various examples, but in one example are implanted at an angle of ten degrees relative to the diamond surface, and at a dose rate of approximately one microamp per square centimeter. The electrons are implanted with an energy of approximately 200 KeV, until the total dose of approximately ten to the seventeenth atoms per square centimeter are implanted into the diamond 101. Varying the parameters of the hydrogen implant will vary the depth and density of the resulting hydrogen implant layer. The hydrogen implant layer is shown as the dotted layer 102 of FIG. 1. Continue reading... Full patent description for Boron-doped diamond semiconductor Brief Patent Description - Full Patent Description - Patent Application Claims Click on the above for other options relating to this Boron-doped diamond semiconductor patent application. ###  How KEYWORD MONITOR works... a FREE service from FreshPatents1. Sign up (takes 30 seconds). 2. Fill in the keywords to be monitored. 3. Each week you receive an email with patent applications related to your keywords. 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