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Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatusRelated Patent Categories: Semiconductor Device Manufacturing: Process, Coating Of Substrate Containing Semiconductor Region Or Of Semiconductor SubstrateBarrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus description/claimsThe Patent Description & Claims data below is from USPTO Patent Application 20070087577, Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus. Brief Patent Description - Full Patent Description - Patent Application Claims
[0001] The entire disclosures of Japanese Patent Application No. 2002-44296 filed on Feb. 21, 2002, Japanese Patent Application No. 2002-44289 filed on Feb. 21, 2002, Japanese Patent Application No. 2002-027738 filed on Feb. 5, 2002, and Japanese Patent Application No. 2001-348325 filed on Nov. 14, 2001, each including specification, claims, drawings and summary, are incorporated herein by reference in their entirety. BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] This invention relates to a production apparatus and a production method for a barrier metal film to be formed on the surface of a substrate for eliminating the diffusion of a metal into the substrate and retaining the adhesion of the metal, when a metal film is formed on the surface of the substrate. [0004] The present invention also relates to a metal film production method and a metal film production apparatus which can form a film of a metal, with the diffusion of the metal being eliminated and the adhesion of the metal being retained, by treating the surface of a barrier metal film produced on a substrate. [0005] 2. Description of Related Art [0006] Semiconductors with electrical wiring have increasingly used copper as a material for the wiring in order to increase the speed of switching, decrease transmission loss, and achieve a high density. In applying the copper wiring, it has been common practice to perform the vapor phase growth method or plating on a substrate having a depression for wiring on its surface, thereby forming a copper film on the surface including the depression. [0007] In forming the copper film on the surface of the substrate, a barrier metal film (for example, a nitride of tantalum, tungsten, titanium or silicon) is prepared beforehand on the surface of the substrate in order to eliminate the diffusion of copper into the substrate, and retain the adhesion of copper. When plating is employed, a copper shielding layer is formed on the barrier metal film by physical or chemical vapor deposition, and used also as an electrode. The barrier metal film has been formed by physical vapor deposition such as sputtering. [0008] The depression for wiring, formed on the surface of the substrate, tends to be decreased in size, and a demand is expressed for a further reduction in the thickness of the barrier metal film. However, the barrier metal film has been produced by use of sputtering, and its directionality is not uniform. With a tiny depression on the surface of the substrate, therefore, the film is formed at the entrance of the depression before being formed in the interior of the depression, resulting in insufficient burial of the depression. Also, the substrate has been badly damaged. [0009] Additionally, the barrier metal film is prepared for the purposes of preventing the diffusion of copper into the substrate and retaining the adhesion of copper. Hence, a nitride of tantalum, tungsten or titanium is formed as a first layer for prevention of copper diffusion, and an active metal, such as tantalum, tungsten or titanium, is formed as a second layer for retention of adhesion to copper. However, the barrier metal film is so thin that it poses difficulty at the present time in performing both functions, the prevention of copper diffusion into the substrate and the retention of copper adhesion. A demand is growing for the advent of a barrier metal film which accomplishes these two functions. [0010] In particular, the wiring depression formed on the surface of the substrate is showing a tendency toward compactness, and further thinning of the barrier metal film is demanded. However, the necessary minimum film thickness has increased, if the barrier metal film is constructed in a two-layer structure by forming a nitride of tantalum, tungsten or titanium as a first layer for prevention of copper diffusion, and forming an active metal, such as tantalum, tungsten or titanium, as a second layer for retention of adhesion to copper. SUMMARY OF THE INVENTION [0011] The present invention has been accomplished in light of the circumstances described above. An object of the invention is to provide a barrier metal film production apparatus and a barrier metal film production method which can form a barrier metal film with excellent burial properties and a very small thickness at a high speed. Another object of the invention is to provide a barrier metal film production apparatus and a barrier metal film production method which can form a barrier metal film with excellent adhesion to a metal formed as a film on the surface of the substrate. Still another object of the invention is to provide a metal film production method and a metal film production apparatus capable of forming a barrier metal film which, although very thin, prevents diffusion of a metal and retains adhesion to the metal. [0012] According to the present invention, there is provided a barrier metal film production apparatus, comprising: [0013] a chamber accommodating a substrate; [0014] a metallic etched member provided in the chamber at a position opposed to the substrate; [0015] source gas supply means for supplying a source gas containing a halogen to an interior of the chamber between the substrate and the etched member; [0016] plasma generation means which converts an atmosphere within the chamber into a plasma to generate a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas; [0017] excitation means for exciting a nitrogen-containing gas in a manner isolated from the chamber; [0018] formation means for forming a metal nitride upon reaction between nitrogen excited by the excitation means and the precursor; and [0019] control means which makes a temperature of the substrate lower than a temperature of the formation means to form the metal nitride as a film on the substrate. [0020] Thus, a barrier metal film comprising a film of a metal nitride and suppressing diffusion can be prepared by forming a metal with the use of a plasma. The barrier metal film can be formed uniformly to a small thickness. Consequently, the barrier metal film can be formed highly accurately at a high speed with excellent burial properties in a very small thickness even to the interior of a tiny depression, for example several hundred nanometers wide, which has been provided in the substrate. [0021] According to the present invention, there is also provided a barrier metal film production apparatus, comprising: [0022] a chamber accommodating a substrate; Continue reading about Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus... 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