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12/27/07 | 39 views | #20070295598 | Prev - Next | USPTO Class 204 | About this Page  204 rss/xml feed  monitor keywords

Backing plate assembly

USPTO Application #: 20070295598
Title: Backing plate assembly
Abstract: In certain embodiments, the invention comprises a backing plate for accommodating large area sputtering targets is disclosed. The backing plate assembly has cavities carved into the back surface of the backing plate. The backing plate may further include cooling channels that run through the backing plate to control the temperature of the backing plate and the target. The cavities may be filled with a material that has a lower density than the backing plate. Additionally, the entire back surface may be covered with the material to produce a smooth surface upon which a magnetron may move during a PVD process. (end of abstract)
Agent: Patterson & Sheridan, LLP - Houston, TX, US
Inventors: Makoto Inagawa, Hienminh Huu Le, Bradley O. Stimson, Akihiro Hosokawa
USPTO Applicaton #: 20070295598 - Class: 2041921 (USPTO)

The Patent Description & Claims data below is from USPTO Patent Application 20070295598.
Brief Patent Description - Full Patent Description - Patent Application Claims  monitor keywords

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001]This application is a continuation-in-part of co-pending U.S. patent application Ser. No. 11/426,271 (APPM/011105), filed Jun. 23, 2006, which is herein incorporated by reference.

BACKGROUND OF THE INVENTION

[0002]1. Field of the Invention

[0003]Embodiments of the present invention generally relate to a backing plate assembly for a physical vapor deposition (PVD) apparatus.

[0004]2. Description of the Related Art

[0005]PVD using a magnetron is one method of depositing material onto a substrate. During a PVD process a target may be electrically biased so that ions generated in a process region can bombard the target surface with sufficient energy to dislodge atoms from the target. The process of biasing a target to cause the generation of a plasma that causes ions to bombard and remove atoms from the target surface is commonly called sputtering. The sputtered atoms travel generally toward the substrate being sputter coated, and the sputtered atoms are deposited on the substrate. Alternatively, the atoms react with a gas in the plasma, for example, nitrogen, to reactively deposit a compound on the substrate. Reactive sputtering is often used to form thin barrier and nucleation layers of titanium nitride or tantalum nitride on the substrate.

[0006]Direct current (DC) sputtering and alternating current (AC) sputtering are forms of sputtering in which the target is biased to attract ions towards the target. The target may be biased to a negative bias in the range of about -100 to -600 V to attract positive ions of the working gas (e.g., argon) toward the target to sputter the atoms. Usually, the sides of the sputter chamber are covered with a shield to protect the chamber walls from sputter deposition. The shield may be electrically grounded and thus provide an anode in opposition to the target cathode to capacitively couple the target power to the plasma generated in the sputter chamber.

[0007]To deposit thin films over large area substrates such as glass substrates, flat panel display substrates, solar panel substrates, and other suitable substrates, a sputtering target, and hence, the backing plate must be of substantial size. As backing plates increase in size, the weight of the backing plate may also increase.

[0008]Therefore, there is a need in the art for large area backing plates that can be used in PVD chambers for large area substrates.

SUMMARY OF THE INVENTION

[0009]In certain embodiments, the invention comprises a backing plate for accommodating large area sputtering targets is disclosed. The backing plate assembly has cavities carved into the back surface of the backing plate. The backing plate may further include cooling channels that run through the backing plate to control the temperature of the backing plate and the target. The cavities may be filled with a material that has a lower density than the backing plate. Additionally, the entire back surface may be covered with the material to produce a smooth surface upon which a magnetron may move during a PVD process.

BRIEF DESCRIPTION OF THE DRAWINGS

[0010]So that the manner in which the above recited features of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.

[0011]FIG. 1 is a top view of a backing plate assembly 100 having cavities 102 formed therein.

[0012]FIG. 2 is a cross sectional view of a backing plate assembly 200 according to another embodiment of the invention.

[0013]FIG. 3 is a top view of a backing plate assembly 300 with cavities 304 filled with material 312.

[0014]FIG. 4 is a cross sectional view of a backing plate assembly 400 according to another embodiment of the invention.

[0015]FIG. 5 is a cross sectional view of a backing plate assembly 500 having a magnetron plate 514 positioned behind the backing plate.

[0016]FIG. 6 is a cross sectional view of an apparatus 600 according to another embodiment of the invention.

[0017]To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements disclosed in one embodiment may be beneficially utilized in other embodiments without specific recitation.

DETAILED DESCRIPTION

[0018]In certain embodiments, the invention comprises a backing plate for accommodating large area sputtering targets is disclosed. The backing plate assembly has cavities carved into the back surface of the backing plate. The backing plate may further include cooling channels that run through the backing plate to control the temperature of the backing plate and the target. The cavities may be filled with a material that has a lower density than the backing plate. Additionally, the entire back surface may be covered with the material to produce a smooth surface upon which a magnetron may move during a PVD process.

[0019]The invention is illustratively described and may be used in a physical vapor deposition system for processing large area substrates, such as a PVD system, available from AKT.RTM., a subsidiary of Applied Materials, Inc., Santa Clara, Calif. However, it should be understood that the backing plate may have utility in other system configurations, including those systems configured to process large area round substrates. An exemplary system in which the present invention can be practiced is described in U.S. patent application Ser. No. 11/225,922, filed Sep. 13, 2005, which is hereby incorporated by reference in its entirety.

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