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09/21/06 - USPTO Class 134 |  185 views | #20060207631 | Prev - Next | About this Page  134 rss/xml feed  monitor keywords

Apparatus and method of cleaning a sustrate

USPTO Application #: 20060207631
Title: Apparatus and method of cleaning a sustrate
Abstract: A cleaning apparatus is provided with a processing bath to be filled with a cleaning chemical, an ultrasonic oscillator, and a retainer for holding a substrate to be immersed into a cleaning chemical. The front surface of the substrate is cleaned while ultrasonic waves are radiated from the ultrasonic oscillator onto the back surface of the substrate. (end of abstract)



Agent: Foley And Lardner LLP Suite 500 - Washington, DC, US
Inventor: Satoshi Kume
USPTO Applicaton #: 20060207631 - Class: 134001300 (USPTO)

Related Patent Categories: Cleaning And Liquid Contact With Solids, Liquid Treating Forms And Mandrels, Including Application Of Electrical Radiant Or Wave Energy To Work, Semiconductor Cleaning

Apparatus and method of cleaning a sustrate description/claims


The Patent Description & Claims data below is from USPTO Patent Application 20060207631, Apparatus and method of cleaning a sustrate.

Brief Patent Description - Full Patent Description - Patent Application Claims
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[0001] This application is a Divisional Application of U.S. Ser. No. 11/078,728, filed on Mar. 14, 2005, which is in turn a Divisional Application of U.S. Ser. No. 10/050,161, filed on Jan. 18, 2002, which claims priority from Japanese Patent Applications 2001-016964, filed on Jan. 25, 2001. The entire contents of each of the aforementioned applications are incorporated herein by reference

FIELD OF THE INVENTION

[0002] The present invention relates to a method and apparatus for cleaning a substrate, such as a semiconductor substrate.

BACKGROUND ART

[0003] When an interconnection pattern is formed on a semiconductor substrate during the course of manufacture of a semiconductor device, a resist pattern is formed on a metal film; e.g., Al or Cu. The semiconductor substrate is subjected to plasma etching via the resist pattern, thus forming an interconnection pattern.

[0004] In association with an increase in the packing density of a device, a sidewall protection film for protecting sidewalls of a pattern during plasma etching is formed thickly, thus improving a geometry into which the metal film is to be etched. In this case, an altered resist layer resulting from plasma etching of a pattern, such as an Al or Cu interconnection, tends to become more difficult to remove during a removal process subsequent to the plasma etching process.

[0005] FIG. 7 is a conceptual drawing of a cross section of a pattern for describing the tendency. A resist layer 73 adhering to the side surfaces of an aluminum interconnection pattern 72 on a substrate 71 acts as a sidewall protection film. Concurrently, an altered resist layer 75 adheres also to the sidewalls of a resist pattern 74.

[0006] In order to eliminate the resist after etching, the altered resist layer 75 has hitherto been removed by means of a wet etching method. However, there still remain residues of the altered layer that cannot be removed by the solubility of the resist in a chemical.

[0007] Alternatively, a single wafer processing cleaner has hitherto been employed. FIG. 8 is a conceptual drawing of an example of such a processing cleaner. In the cleaner, a substrate 82 to be cleaned is placed on top of a rotary stage 81, and chemicals are dropped from a chemical drop nozzle 83 onto the substrate 82. In the case of such a rotary method, structural limitations are imposed on introduction of ultrasonic cleaner for improving the removal.

[0008] The present invention has been conceived to solve the drawbacks of the related-art cleaning technology as described above. To this end, there is adopted a dipping method of introducing a chemical into a processing bath. A substrate to be cleaned is immersed in the chemical and exposed to ultrasonic waves, thereby improving a cleaning effect and promoting removal of an altered resist layer adhering to the substrate.

SUMMARY OF THE INVENTION

[0009] According to one aspect of the present invention, a substrate cleaning apparatus comprises: a processing bath to be filled with a cleaning chemical, an ultrasonic oscillator disposed in the processing bath and immersed in the cleaning chemical, and a retainer for retaining a substrate to be immersed in the cleaning chemical such that ultrasonic waves originating from the ultrasonic oscillator are radiated onto a back surface of the substrate.

[0010] In another aspect, the ultrasonic oscillator has a plurality of oscillation sources disposed in a dispersed manner.

[0011] In another aspect, the substrate cleaning apparatus further comprises a rotary mechanism for rotating the substrate retained by the retainer.

[0012] In another aspect, the substrate cleaning apparatus further comprises propagation control apparatus for scattering or damping ultrasonic waves originating from the ultrasonic oscillator.

[0013] In another aspect, in the substrate cleaning apparatus, the propagation control apparatus is constituted by means of placing, in a propagation path of ultrasonic waves, a plate-like member having a plurality of openings selectively formed therein.

[0014] In another aspect, the propagation control apparatus includes jet nozzles for squirting a chemical in the propagation path of ultrasonic waves, thus circulating a flow of chemical.

[0015] According to another aspect of the present invention, in a substrate cleaning method, a substrate whose surface has been processed is immersed in a cleaning chemical filled in a processing bath, and ultrasonic waves are radiated onto a back surface of the substrate, thereby cleaning a front surface of the substrate.

[0016] Other and further objects, features and advantages of the invention will appear more fully from the following description.

BRIEF DESCRIPTION OF THE DRAWINGS

[0017] FIG. 1 is a cross-sectional view schematically showing a configuration of a substrate cleaning apparatus according to a first embodiment of the present invention.

[0018] FIG. 2 depicts a preferred example of the ultrasonic oscillator, showing an example layout in which the radiators are arranged on the surface of the ultrasonic oscillator.

[0019] FIG. 3 is a cross-sectional view schematically showing a construction of a substrate cleaning apparatus according to a second embodiment of the present invention.

[0020] FIG. 4 is a cross-sectional view schematically showing a construction of a substrate cleaning apparatus according to a third embodiment of the present invention.

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