Active solid-state devices (e.g., transistors, solid-state diodes) patents - Monitor Patents
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Active solid-state devices (e.g., transistors, solid-state diodes)

Below are recently published patent applications awaiting approval from the USPTO. Recent week's RSS XML file available below.
Listing for abstract view: USPTO application #, Title, Abstract excerpt,Patent Agent. Listing format for list view: USPTO National Class full category number, title of the patent application.
  
08/07/2014 > 275 patent applications in 112 patent subcategories.

20140217348 - Transition metal oxide bilayers: Embodiments of the invention include nonvolatile memory elements and memory devices comprising the nonvolatile memory elements. Methods for forming the nonvolatile memory elements are also disclosed. The nonvolatile memory element comprises a first electrode layer, a second electrode layer, and a plurality of layers of an oxide disposed between the... Agent: Sandisk 3d LLC

20140217350 - Arrays of memory cells and methods of forming an array of memory cells: An array of memory cells includes buried access lines having conductively doped semiconductor material. Pillars extend elevationally outward of and are spaced along the buried access lines. The pillars individually include a memory cell. Outer access lines are elevationally outward of the pillars and the buried access lines. The outer... Agent: Micron Technology, Inc.

20140217351 - Memory cells and methods of forming memory cells: Some embodiments include methods of forming memory cells. Programmable material may be formed directly adjacent another material. A dopant implant may be utilized to improve adherence of the programmable material to the other material by inducing bonding of the programmable material to the other material, and/or by scattering the programmable... Agent: Micron Technology, Inc.

20140217352 - Memory cells, methods of forming memory cells and methods of forming memory arrays: Some embodiments include memory cells which have multiple programmable material structures between a pair of electrodes. One of the programmable material structures has a first edge, and another of the programmable material structures has a second edge that contacts the first edge. Some embodiments include methods of forming an array... Agent: Micron Technology, Inc.

20140217349 - Methods of forming memory and methods of forming vertically-stacked structures: Some embodiments include constructions having electrically conductive bitlines within a stack of alternating electrically conductive wordline levels and electrically insulative levels. Cavities extend into the electrically conductive wordline levels, and phase change material is within the cavities. Some embodiments include methods of forming memory. An opening is formed through a... Agent: Micron Technology, Inc.

20140217354 - Large array of upward pointing p-i-n diodes having large and uniform current: A monolithic three-dimensional memory array is provided that includes a first memory level and a second memory level disposed above or below the first memory level. The first memory level includes a plurality of vertically oriented p-i-n diodes that each include a bottom heavily doped p type region. The second... Agent: Sandisk 3d LLC

20140217353 - Stackable non-volatile resistive switching memory device and method: A memory device includes a first plurality of memory cells arranged in a first crossbar array, a first thickness of dielectric material overlying the first plurality of memory cells, and a second plurality of memory cells arranged in a second crossbar array overlying the first thickness of dielectric material. The... Agent: Crossbar, Inc.

20140217361 - Group iii nitride nanorod light emitting device: There are disclosed a group III nitride nanorod light emitting device and a method of manufacturing thereof. The group III nitride nanorod light emitting device includes a substrate, an insulating film formed on the substrate, and including a plurality of openings exposing parts of the substrate and having different diameters,... Agent: Samsung Electronics Co., Ltd.

20140217359 - Light-emitting apparatus: The present application discloses a light-emitting apparatus comprising a first light-emitting semiconductor stack, a first intermediate layer formed on the first light-emitting semiconductor stack and a second light-emitting semiconductor stack formed on the first intermediate layer. The first intermediate layer comprises a first conductive semiconductor layer, a second conductive semiconductor... Agent: Epistar Corporation

20140217358 - Light-emitting diode and the manufacture method of the same: This application discloses a light-emitting diode comprising a first semiconductor layer, an active layer on the first semiconductor layer, a second semiconductor layer on the active layer, and a semiconductor contact layer on the second semiconductor layer. The second semiconductor layer comprises a first sub-layer and a second sub-layer formed... Agent: Epistar Corporation

20140217355 - Semiconductor light emitting device: A semiconductor light emitting device includes: a semiconductor laminate having first and second conductivity type semiconductor layers and an active layer formed between the first and second conductivity type semiconductor layers; first and second electrodes connected to the first and second conductivity type semiconductor layers, respectively; and a micro-pattern formed... Agent: Samsung Electronics Co., Ltd.

20140217357 - Semiconductor light emitting device: A semiconductor light emitting device including a first conductive semiconductor base layer on a substrate; an insulating layer on the first conductive semiconductor base layer, the insulating layer including a plurality of openings through which the first conductive semiconductor base layer is exposed; and a plurality of nanoscale light emitting... Agent: Samsung Electronics Co., Ltd.

20140217360 - Semiconductor light-emitting element and method for producing the same: A semiconductor light-emitting element includes, a first semiconductor layer, a second semiconductor layer, a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer, a first electrode connected to the first semiconductor layer, and a second electrode provided on the second semiconductor layer. A side of the... Agent: Kabushiki Kaisha Toshiba

20140217356 - Thin film wafer transfer and structure for electronic devices: An electronic device includes a spreading layer and a first contact layer formed over and contacting the spreading layer. The first contact layer is formed from a thermally conductive crystalline material having a thermal conductivity greater than or equal to that of an active layer material. An active layer includes... Agent: International Business Machines Corporation

20140217363 - Low-resistivity p-type gasb quantum wells: A semiconductor device including a heterostructure having at least one low-resistivity p-type GaSb quantum well is provided. The heterostructure includes a layer of In0.52Al0.48As on an InP substrate, where the In0.52Al0.48As is lattice matched to InP, followed by an AlAsxSb1-x buffer layer on the In0.52Al0.48As layer, an AlAsxSb1-x spacer layer... Agent: The Government Of The United States Of America, As Represented By The Secretary Of The Navy

20140217362 - Semiconductor device and method for manufacturing the same: The present invention discloses a method for manufacturing a semiconductor device, which comprises: forming a plurality of fins on a substrate, which extend along a first direction and have rhombus-like cross-sections; forming a gate stack structure on each fin, which traverses the plurality of fins and extends along a second... Agent:

20140217364 - Diode structure and method for wire-last nanomesh technologies: In one aspect, a method of fabricating an electronic device includes the following steps. An alternating series of device and sacrificial layers are formed in a stack on an SOI wafer. Nanowire bars are etched into the device/sacrificial layers such that each of the device layers in a first portion... Agent: International Business Machines Corporation

20140217388 - Display device and electronic apparatus: A display device including: a plurality of sub-pixels arranged in a matrix, each including an electro-optical element having a structure in which a display functional layer is sandwiched between an upper electrode and a lower electrode; and an auxiliary interconnect contact in a pixel area in which the plurality of... Agent: Sony Corporation

20140217384 - Display panel and display device: A display panel includes: a plurality of pixel circuits formed in a matrix on a substrate; an insulating layer covering the plurality of pixel circuits; a plurality of light emitting elements connected to the plurality of pixel circuits, and arranged in a matrix on the insulating layer; a filtering layer... Agent: Sony Corporation

20140217387 - Electronic appliance and light-emitting device: An EL element having a novel structure is provided, which is suitable for AC drive. A light-emitting element of the invention is provided with material layers (material layers each having approximately symmetric I-V characteristics with respect to the zero point in a graph having the abscissa axis showing current values... Agent: Semiconductor Energy Laboratory Co., Ltd.

20140217382 - Electronic devices with flexible display and method for manufacturing the same: Embodiments of the present disclosure can significantly reduce the non-display area of a flexible OLED display, which would otherwise be covered by a cosmetic trim such as a bezel or an opaque. As such, an electronic device with a display having minimized border area can be provided. This makes it... Agent:

20140217383 - Flexible display device and method for manufacturing flexible display device: A method for manufacturing a flexible display device includes: manufacturing a flexible substrate on a substrate by: forming a first organic layer on the substrate, removing foreign particles formed on the first organic layer and forming a recessed first repair groove in the first organic layer, forming a first inorganic... Agent:

20140217373 - Flexible display substrate, flexible organic light emitting display device and method for manufacturing the same: A flexible display substrate, a flexible organic light emitting display device, and a method of manufacturing the same are provided. The flexible display substrate comprises a flexible substrate including a display area and a non-display area extending from the display area, a first wire formed on the display area of... Agent: Lg Display Co., Ltd.

20140217381 - Illuminant with at least one organic light emitting diode: Illustrated and described is an illuminant, including at least one organic light emitting diode which is applied to a carrier material that is vapor deposited with a metal layer which metal layer supplies the at least one organic light emitting diode with voltage and is connectable with connecting conductors, wherein... Agent:

20140217390 - Laminated substrate for organic led element, and organic led element: A laminated substrate for an organic LED element includes a translucent substrate, a scattering layer including glass and a solid scattering material provided on the translucent substrate and having a thickness of 30 μm or less, and an electrode provided on the scattering layer, and no covering layer including glass... Agent: Asahi Glass Company, Limited

20140217386 - Light emission device: A light emission device includes an organic electroluminescent element including a first electrode and a second electrode, a wiring board including a second substrate, a first patterned conductor and a second patterned conductor, a first bond which is an electrical conductor containing electrically conductive powder and an organic binder, and... Agent: Panasonic Corporation

20140217394 - Light-emitting element and light-emitting element manufacturing method: A light-emitting element includes: a first electrode; a light-emitting functional layer that is provided on the first electrode, and includes a conductive layer as an uppermost layer thereof; a second electrode that is provided on the conductive layer, and has an undesired opening that corresponds to a region of the... Agent: Panasonic Corporation

20140217368 - Method for manufacturing transparent electrode of organic light emitting display device and organic light emitting display device using the transparent electrode: A method for manufacturing an organic light emitting display device includes mounting in a chamber a substrate where a transparent electrode is to be formed and a SnO member that is a source of forming the transparent electrode, injecting argon gas and oxygen into the chamber, and evaporating the SnO... Agent: Samsung Display Co., Ltd.

20140217375 - Novel semiconducting alloy polymers formed from orthocarborane and 1,4-diaminobenzene: Novel semiconducting polymers have been formed via the electron-induced cross-linking of orthocarborane B10C2H2 and 1,4-diaminobenzene. The films were formed by co-condensation of the molecular precursors and 200 eV electron-induced cross-linking under ultra-high vacuum (UHV) conditions. Ultraviolet photoemission spectra show that the compound films display a shift of the valence band... Agent: Quantum Devices, LLC

20140217377 - Oled encapsulated in a full-wafer adhesive having a perforated cover: v

20140217391 - Organic el element and method for manufacturing same: An organic EL element includes an organic EL substrate 4 including an organic light emitting unit provided on a translucent substrate, and a sealing cap substrate sealing the light emitting unit. The organic EL substrate includes first electrode taking-out pads and provided in electrodes which feed power to the light... Agent:

20140217393 - Organic electroluminescence element: An organic electroluminescence device including an anode and a cathode being opposed, wherein a first organic thin film layer and a second organic thin film layer are provided between the anode and the cathode sequentially from the anode side; the first organic thin film layer including an aromatic heterocyclic derivative... Agent: Idemitsu Kosan Co., Ltd.

20140217378 - Organic electroluminescent element: An organic electroluminescence includes an anode, a cathode and at least an emitting layer interposed between the anode and the cathode, in which the emitting layer contains a first host material, a second host material and a phosphorescent dopant material as main components. The first host material is a compound... Agent: Idemitsu Kosan Co., Ltd.

20140217376 - Organic light emissive material and device: An organic light-emitting device comprises a first electrode, a second electrode and at least one light-emitting layer between the first and second electrodes wherein the device comprises a plurality of light-emitters that together provide a source of white light. A first light-emitting layer comprises a host material and a first... Agent: Cambridge Display Technology Limited

20140217379 - Organic light emitting composition, device and method: Disclosed is a crosslinkable light-emitting composition comprising at least one host material, at least one phosphorescent light-emitting dopant, a first crosslinker comprising an unsaturated carbon-carbon bond group and a second crosslinker comprising a ring system capable of undergoing ring-opening crosslinking.... Agent: Cambridge Display Technology Limited

20140217367 - Organic light emitting device: A full color light emitting device having a reduced driving voltage includes a substrate having a first subpixel, a second subpixel, and a third subpixel. A plurality of first electrodes are in the first subpixel, the second subpixel, and the third subpixel. A second electrode faces the first electrode. An... Agent: Samsung Display Co., Ltd.

20140217392 - Organic light emitting diode: The present invention relates to an organic light emitting diode and a method of manufacturing the same. An organic light emitting diode according to the present invention comprises an exciton blocking layer comprising a compound represented by Formula 1 to confine an exciton to a light emitting layer to prevent... Agent:

20140217371 - Organic light emitting diode device and manufacturing method thereof: An organic light emitting diode device can have an enhanced thin film encapsulation layer for preventing moisture from permeating from the outside. The thin film encapsulation layer can have a multilayered structure in which one or more inorganic layers and one or more organic layers are alternately laminated. A barrier... Agent: Samsung Display Co., Ltd.

20140217372 - Organic light emitting display and method of manufacturing the same: An organic light emitting display includes a substrate, a first electrode disposed on the substrate, a pixel definition layer disposed on the substrate to partition a pixel area, a first common layer disposed on the first electrode, a protrusion pattern that includes a plurality of protrusions disposed on the first... Agent:

20140217370 - Organic light emitting display device with insulating layer formed as multi-layered structure: Provided is an organic light emitting display device, including a substrate, an insulating layer on the substrate, and a display element layer on the insulating layer, in which the insulating layer includes one or more low refractive layers and one or more high refractive layers.... Agent: Samsung Display Co., Ltd.

20140217369 - Organic light-emitting transistor: An organic light-emitting transistor comprising a first electrode, a first semiconductor layer disposed on the first electrode, a second electrode disposed on the first semiconductor layer, a second semiconductor layer disposed on the second electrode, one of the first and second semiconductor layers having an organic semiconductor which emits light... Agent:

20140217380 - Organic luminescence emitting display device and method of manufacturing the same: An organic light emitting display apparatus including an organic light-emitting unit formed on a substrate; a moisture absorbing layer formed on the organic light-emitting unit; and at least one inorganic layer, which is formed on the moisture absorbing layer and includes a low temperature viscosity transition (LVT) inorganic material.... Agent:

20140217374 - Organic semiconductor material: Novel compounds useful as organic semiconductor material are described. Semiconductor devices containing said organic semiconductor material are also described.... Agent: E.t.c. S.r.l.

20140217385 - Outcoupling device and light source: The invention relates to a light source (1) comprising a light generating unit (2) like an organic light emitting diode and an outcoupling device (3) for coupling light out of the light generating unit in an outcoupling direction (4). The outcoupling device comprises a first region (5) for facing the... Agent: Koninklijke Philips N.v.

20140217365 - Photodetector and upconversion device with gain (ec): Embodiments of the invention are directed to IR photodetectors with gain resulting from the positioning of a charge multiplication layer (CML) between the cathode and the IR sensitizing layer of the photodetector, where accumulating charge at the CML reduces the energy difference between the cathode and the CML to promote... Agent: University Of Florida Research Foundation, Inc.

20140217366 - Reflection organic light-emitting diode display device and driving method thereof: A reflection organic light-emitting diode (OLED) display device and driving method thereof are provided. A default cavity produces reflection light of a default wavelength through optical interference with incident light. When imposed by a voltage, an organic emitting layer produces self-luminous light for mixing, so as to change the wavelength... Agent: Yuan Ze University

20140217389 - Surface modification: A method of modifying a fluorinated polymer surface comprising the steps of depositing a first layer on at least a portion of the fluorinated polymer surface, the first layer comprising a first polymer, the first polymer being a substantially perfluorinated aromatic polymer; and depositing a second layer on at least... Agent: Cambridge Display Technology Limited

20140217399 - Active matrix image sensing panel and apparatus: An active matrix image sensing panel comprises a substrate and an image sensing pixel. The image sensing pixel is disposed on the substrate and comprises a scan line, a data line crossing the scan line, a photo sensing element and a TFT element. The photo sensing element includes a first... Agent: Innocom Technology (shenzhen) Co., Ltd

20140217397 - Flexible display substrate, flexible organic light emitting display device and method of manufacturing the same: A flexible display substrate, a flexible organic light emitting display device, and a method of manufacturing the same are provided. The flexible display substrate comprises a flexible substrate including a display area and a non-display area extending from the display area, and a wire formed on the flexible substrate. At... Agent: Lg Display Co., Ltd.

20140217405 - Ga2o3 semiconductor element: A Ga2O3 semiconductor element, includes: an n-type β-Ga2O3 substrate; a β-Ga2O3 single crystal film, which is formed on the n-type β-Ga2O3 substrate; source electrodes, which are formed on the β-Ga2O3 single crystal film; a drain electrode, which is formed on the n-type β-Ga2O3 substrate surface on the reverse side of... Agent: Tamura Corporation

20140217404 - Low power consumption type gas sensor and method for manufacturing the same: The present disclosure provides a gas sensor including: a substrate; an electrode formed on the substrate; and a gas-sensing layer formed on the electrode, wherein the gas-sensing layer is a self-heating nanocolumnar structure having nanocolumns formed on the electrode and inclined with respect to the electrode with an angle of... Agent: Korea Institute Of Science And Technology

20140217402 - Method for manufacturing semiconductor device: It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin... Agent: Semiconductor Energy Laboratory Co., Ltd.

20140217395 - Polymeric materials for use in metal-oxide-semiconductor field-effect transistors: Disclosed are polysulfone-based materials that can be used as active and/or passive components in various electronic, optical, and optoelectronic devices, particularly, metal-oxide-semiconductor field-effect transistors. For example, various metal-oxide-semiconductor field-effect transistors can include a dielectric layer and/or a passivation layer prepared from such polysulfone-based materials and exhibit good device performance.... Agent: Polyera Corporation

20140217403 - Semiconductor device: A semiconductor device in which a transistor using an oxide semiconductor containing In, Zn, or the like for a channel region can be driven like a p-channel transistor is provided. The semiconductor device includes a transistor and an inverter, wherein an output of the inverter is input to a gate... Agent: Semiconductor Energy Laboratory Co., Ltd.

20140217401 - Semiconductor device and method for manufacturing the same: Provided is a bottom-gate transistor including an oxide semiconductor, in which electric-field concentration which might occur in the vicinity of an end portion of a drain electrode layer (and the vicinity of an end portion of a source electrode layer) when a high gate voltage is applied to a gate... Agent: Semiconductor Energy Laboratory Co., Ltd.

20140217400 - Semiconductor element structure and manufacturing method for the same: A semiconductor element structure and a manufacturing method for the same are provided. The semiconductor element structure may comprise a gate electrode, a dielectric layer, an active layer, a source, a drain and a protective layer. The active layer and the gate electrode are disposed on opposing sides of the... Agent: Industrial Technology Research Institute

20140217396 - Thin film transistor, method of manufacturing the same, and image display device equipped with thin film transistor: A thin film transistor includes, on an insulating substrate, at least: a gate electrode; a gate insulating layer; a source electrode; a drain electrode; a metal oxide layer including a semiconductor region and an insulating region, each of the semiconductor region and the insulating region being composed of a same... Agent: Toppan Printing Co., Ltd.

20140217398 - Thin-film transistor device and thin-film transistor display apparatus: A thin-film transistor (TFT) device comprises a gate, a source, a drain, an insulation layer and an active area. The insulation layer electrically separates the gate from the source and the drain. The active area including a plurality of contacting areas contacting the source and the drain, respectively, and generates... Agent: Innolux Corporation

20140217406 - Apparatus and method for non-intrusive random memory failure emulation within an integrated circuit: The system and methods allow for emulation of random hardware failure of an internal embedded memory array of an integrated circuit (IC) device. Emulation of potential defects is performed in order to evaluate the behavior of the rest of the design. This non-intrusive emulation is performed in a pseudo-functional mode... Agent: Scaleo Chip

20140217407 - Semiconductor device and method of manufacturing semiconductor device: A donor layer that is formed by performing a heat treatment for a crystal defect formed by proton radiation is provided in an n-type drift layer of an n− semiconductor substrate. The donor layer has an impurity concentration distribution including a portion with the maximum impurity concentration and a portion... Agent: Fuji Electric Co., Ltd

20140217408 - Buffer layer for high performing and low light degraded solar cells: Methods for forming a photovoltaic device include forming a buffer layer between a transparent electrode and a p-type layer. The buffer layer includes a doped germanium-free silicon base material. The buffer layer has a work function that falls within barrier energies of the transparent electrode and the p-type layer. An... Agent: International Business Machines Corporaton

20140217409 - Thin film transistor: A thin film transistor comprises a semiconductor layer; first and second dielectric layers disposed on opposite sides of the semiconductor layer; a first metal layer forming first and second terminals on the opposite side of the first dielectric layer from the semiconductor layer, one of said first and second terminals... Agent: Ignis Innovation Inc.

20140217411 - Array substrate and liquid crystal display panel: Embodiments provide an array substrate and a liquid crystal display panel. The array substrate comprises: a substrate, data lines and gate lines which are provided on the substrate and intersect with each other, and sub-pixel units which are defined by surrounding of the data lines and the gate lines and... Agent: Beijing Boe Optoelectronics Technology Co., Ltd.

20140217410 - Array substrate, display device and manufacturing method thereof: The present invention provides a manufacturing method of array substrate, which comprises: substrate; source, drain, driving electrode, and first capacitance electrode being formed on substrate; a first dielectric layer being formed to cover source, drain, driving electrode, and first capacitance electrode; first dielectric layer comprising first section covering first capacitance... Agent: Shenzhen China Star Optoelectronics Technology Co., Ltd.

20140217412 - Display device: A display device includes a display area and a terminal area formed outside the display area. The display area has a plurality of scanning lines and a plurality of video signal lines that cross the scanning lines. The terminal area has a first terminal having a semiconductor chip connected thereto,... Agent: Japan Display Inc.

20140217413 - Semiconductor device and manufacturing method thereof: To reduce parasitic capacitance between a gate electrode and a source electrode or drain electrode of a dual-gate transistor. A semiconductor device includes a first insulating layer covering a first conductive layer; a first semiconductor layer, second semiconductor layers, and an impurity semiconductor layer sequentially provided over the first insulating... Agent: Semiconductor Energy Laboratory Co., Ltd.

20140217414 - Power storage device: A semiconductor device comprises a thin film transistor provided over a substrate having an insulating surface, and an electrode penetrating the substrate. The thin film transistor is provided between a first structural body and a second structural body, which has a higher rigidity than the first structural body, which serve... Agent: Semiconductor Energy Laboratory Co., Ltd.

20140217415 - Thin film transistor and organic light-emitting display: A thin film transistor including: a substrate; an active layer formed over the substrate; a gate insulating layer formed over the active layer; a gate electrode formed over the gate insulating layer; an interlayer insulating layer formed over the gate electrode; and source and drain electrodes that contact the active... Agent: Samsung Display Co., Ltd.

20140217417 - Illumination method and light-emitting device: To provide an illumination method and a light-emitting device which are capable of achieving, under an indoor illumination environment where illuminance is around 5000 lx or lower when performing detailed work and generally around 1500 lx or lower, a color appearance or an object appearance as perceived by a person,... Agent: Mitsubishi Chemical Corporation

20140217420 - Methods and structures for preparing single crystal silicon wafers for use as substrates for epitaxial arowth of crack-free aallium nitride fi ms and devices: This document describes the fabrication and use of ceramic stabilizing layer fabricated right on the product silicon wafer to facilitate its use as a substrate for fabrication of gallium nitride films. A ceramic layer is formed and then attached to a single crystal silicon substrate to form a composite silicon... Agent:

20140217416 - Nitrides based semiconductor device: A nitride-based semiconductor device is disclosed, including a substrate, an active region including a plurality of nitride-based semiconductor layers disposed on the substrate, wherein a 2DEG channel and a two-dimensional hole gas (2DHG) under the two-dimensional electron gas (2DEG) channel are formed within the plurality of nitride-based semiconductor layers, a... Agent: Delta Electronics, Inc.

20140217418 - Semiconductor light emitting device having roughness layer: A semiconductor light emitting device is provided, including a substrate, a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer that includes a top surface and a bottom surface. The device includes a first roughness layer having a random horn shape and formed with irregular intervals,... Agent: Lg Innotek Co., Ltd.

20140217419 - Semiconductor structures including stacks of indium gallium nitride layers: Methods of forming ternary III-nitride materials include epitaxially growing ternary III-nitride material on a substrate in a chamber. The epitaxial growth includes providing a precursor gas mixture within the chamber that includes a relatively high ratio of a partial pressure of a nitrogen precursor to a partial pressure of one... Agent: Soitec

20140217422 - Field effect silicon carbide transistor: In a SiC-MOSFET power device for which a SiC substrate is used, a laminated insulating film having a charge-trapping characteristic is employed as a gate insulating film of the SiC-DiMOSFET, and charges are injected into the laminated insulating film, thereby suppressing a change in the gate threshold voltage.... Agent:

20140217424 - Semiconductor device, electro-optic device, power conversion device, and electronic apparatus: A semiconductor device includes a silicon substrate, a silicon carbide film formed on the silicon substrate, a mask member formed on a surface of the silicon carbide film, and having an opening section, single-crystal silicon carbide films each having grown epitaxially from the silicon carbide film exposed in the opening... Agent: Seiko Epson Corporation

20140217423 - Semiconductor light-emitting device, method for forming recesses of the same, and light source apparatus using the same: A semiconductor light-emitting device made of a nitride-based semiconductor includes a semiconductor stacked structure having a nonpolar plane or a semipolar plane as a principal plane, and including an active layer for emitting polarized light. The semiconductor light-emitting device includes a striped structure which is provided in a position intersecting... Agent: Panasonic Corporation

20140217421 - Semiconductor structure and method of manufacturing the same: The present invention provides a semiconductor structure comprising a substrate, a gate stack, a sidewall, a base region, source/drain regions, and a support structure, wherein: the base region is located above the substrate, and is separated from the substrate by the void; said support structure is located on both sides... Agent: Institute Of Microelectronics, Chinese Academy Of Sciences

20140217425 - Radiation-emitting semiconductor component: A radiation-emitting semiconductor component includes a semiconductor body. The semiconductor body has a semiconductor layer sequence having an active region provided for generating radiation. The semiconductor component has a waveguide, which is provided for laterally guiding the radiation generated in the active region and which extends between a mirror surface... Agent: Osram Opto Semiconductors Gmbh

20140217426 - Semiconductor integrated circuit device, electronic apparatus, and display apparatus: A semiconductor integrated circuit device includes a COF substrate; a semiconductor integrated circuit mounted on the COF substrate and having a first voltage circuit portion operating at a first voltage range and a second voltage circuit portion operating at a second voltage range higher than the first voltage range, the... Agent: Rohm Co., Ltd.

20140217427 - Solid-state light emitting devices and signage with photoluminescence wavelength conversion: A solid-state light emitting device comprises a solid-state light emitter (LED) operable to generate excitation light and a wavelength conversion component including a mixture of particles of a photoluminescence material and particles of a light reflective material. In operation the phosphor absorbs at least a portion of the excitation light... Agent: Intematix Corporation

20140217431 - Display device, method for manufacturing the same, and electronic device: There is provided a display device including a plurality of light emitting elements over a first substrate, and an anti-reflection member configured to prevent reflection of light from a first substrate side at a boundary portion in a pixel region corresponding to each of the light emitting elements, the anti-reflection... Agent: Sony Corporation

20140217433 - Light emitter devices and methods for light emitting diode (led) chips: Light emitter devices for light emitting diodes (LED chips) and related methods are disclosed. In one embodiment a light emitter device includes a substrate and a chip on board (COB) array of LED chips disposed over the substrate. A layer having wavelength conversion material provided therein is disposed over the... Agent:

20140217432 - Light emitting device and electronic apparatus: There is provided a light emitting device including: a semiconductor substrate; a plurality of pixel circuits that is disposed in a display region of the semiconductor substrate; a first wiring that is formed of a conductive material so as to be supplied with a predetermined electric potential; and a plurality... Agent: Seiko Epson Corporation

20140217434 - Light emitting devices and methods: Light emitting devices and methods such as light emitting diodes (LEDs) are disclosed for use in higher voltage applications. Variable arrangements of LEDs are disclosed herein. Arrangements can include one or more LED chips connected in series, parallel, and/or a combination thereof. LED chips can be disposed in a package... Agent: Cree, Inc.

20140217429 - Light emitting diode display panel: A light emitting diode display panel includes a substrate and a plurality of pixels. The substrate includes a plurality of transverse signal lines and a plurality of longitudinal signal lines crossing each other. The pixels are mounted on the substrate in a matrix form. Each pixel includes a plurality of... Agent: Lextar Electronics Corporation

20140217428 - Light-emitting device with multi-color temperature and multi-loop configuration: A light-emitting device with multi-color temperature and multi-loop configuration is provided. The light-emitting device comprises a substrate, multiple light sources disposed on the substrate, and a light-emitting unit covering the light sources and at least a portion of the substrate. Each of the light sources is configured to emit a... Agent: Everlight Electronics Co., Ltd.

20140217430 - Optoelectronic semiconductor unit and module comprising a plurality of such units: A semiconductor unit (10) is provided which comprises a first semiconductor chip (1a) and a second semiconductor chip (1b). The first and second semiconductor chip (1a, 1b) each have an active layer (1a, 1b) suitable for generating radiation. A first converter (3a) which comprises a yellow phosphor with an added... Agent: Osram Opto Semiconductors Gmbh

20140217435 - Light emitting diodes with low junction temperature and solid state backlight components including light emitting diodes with low junction temperature: A light emitting diode chip a support layer having a first face and a second face opposite the first face, a diode region on the first face of the support layer, and a bond pad on the second face of the support layer. The bond pad includes a gold-tin structure... Agent: Cree, Inc.

20140217450 - Anisotropic conductive adhesive and method for manufacturing same, and light-emitting device and method for manufacturing same: An anisotropic conductive adhesive which uses conductive particles where a silver-based metal is used as a conductive layer, having high light reflectance and excellent migration resistance is provided. The anisotropic conductive adhesive includes light reflective conductive particles in an insulating adhesive resin. The light reflective conductive particle includes a light... Agent:

20140217441 - Antireflection coating using self-assembly nano structure and manufacture method thereof: In an aspect of the present disclosure, there is disclosed a manufacture method of an antireflection coating using a self-assembly nano structure, which includes forming a first metal droplet on a substrate by means of droplet epitaxy, depositing a first non-metal on the formed first metal droplet, and forming a... Agent:

20140217443 - Chip with integrated phosphor: This disclosure relates to light emitting devices and methods of manufacture thereof, including side and/or multi-surface light emitting devices. Embodiments according to the present disclosure include the use of a functional layer, which can comprise a stand-off distance with one or more portions of the light emitter to improve the... Agent:

20140217445 - High efficiency plastic light conversion components by incorporation of phosphor in a polymer by adding to monomers before polymerisation: The invention relates to a method for producing a polymer product having integrated luminescent material particles, the polymer product being produced from at least one monomer in liquid phase and at least one kind of powder of luminescent material particles. The method is characterized by adding the luminescent material to... Agent: Koninklijke Philips N.v.

20140217446 - Led package and metallic frame thereof: A light emitting diode package includes a metallic frame, and an LED chip disposed on the metallic frame. The metallic frame includes first and second metal plates arranged side by side with a space therebetween, and two support arms extending integrally and respectively from two opposite ends of the second... Agent: Lite-on Electronics (guangzhou) Limited

20140217437 - Light emitting apparatus and manufacturing method thereof: The present application provides for a method for manufacturing a light emitting apparatus. The method includes mounting light emitting elements on a substrate and applying a resin containing phosphors to form wavelength conversion units covering the light emitting elements on the substrate. Portions of the wavelength conversion unit are removed... Agent: Samsung Electronics Co., Ltd.

20140217452 - Light emitting device having vertical structure and package thereof: A light emitting device having a vertical structure and a package thereof, which are capable of damping impact generated in a substrate separation process, and achieving an improvement in mass productivity. The device and package include a sub-mount, a first-type electrode, a second-type electrode, a light emitting device, a zener... Agent: Lg Innotek Co., Ltd.

20140217453 - Light emitting diode: A light emitting diode includes a first semiconductor layer, an active layer, a second semiconductor layer, an upper electrode, and a lower electrode. The active layer is sandwiched between the first semiconductor layer and the second semiconductor layer. The lower electrode is electrically connected with the first semiconductor layer, and... Agent: Tsinghua University

20140217454 - Light source comprising a luminescent substance and associated illumination unit: A light source includes a primary radiation source, which emits radiation in the shortwave range of the optical spectral range, wherein this radiation is converted at least by means of a first luminescent substance entirely or partially into secondary longer-wave radiation in the visible spectral range, wherein the first luminescent... Agent: Osram Gmbh

20140217440 - Light-emitting module and manufacturing method thereof: A light-emitting module includes a first conductive lead frame, a second conductive lead frame physically separated from the first conductive lead frame, a protective plastic layer, a reflective plastic layer, and a light-emitting die. The protective plastic layer surrounds the first and second conductive lead frames, and an accommodating space... Agent: Lextar Electronics Corporation

20140217451 - Mixed light led structure: Disclosed is a mixed light LED structure which is a solid-state phosphor plate manufactured by mixing phosphor and resin, and the solid-state phosphor plate is installed in a carrier and covered onto the top of a light emitting chip, and a specific ratio relation between the area of the solid-state... Agent: Unity Opto Technology Co., Ltd.

20140217444 - Optoelectronic semiconductor component and method for the production thereof: An optoelectronic semiconductor device including a carrier substrate and at least one semiconductor chip arranged thereon, wherein the semiconductor chip includes an active layer that generates radiation, conductor tracks electrically contacting the semiconductor chip arranged on the carrier substrate, the semiconductor chip is enclosed in a potting material, and the... Agent: Osram Opto Semiconductors Gmbh

20140217447 - Phosphor compositions for highly reliable white light-emitting diode devices:

20140217439 - Semiconductor light emitting device: The present disclosure relates to a semiconductor light-emitting device, comprising: a plurality of semiconductor layers grown sequentially using a growth substrate; a first electrode for providing either electrons or holes to a first semiconductor layer; a non-conductive reflective film formed over a second semiconductor layer to reflect light from an... Agent: Semicon Light Co., Ltd.

20140217448 - Semiconductor light emitting device: There is provided a semiconductor light-emitting device having a small size and high light efficiency. The semiconductor light-emitting device includes a substrate; a light-emitting structure that includes a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer are formed on the substrate, wherein the light-emitting structure... Agent: Samsung Electronics Co., Ltd.

20140217438 - Semiconductor light emitting device and method for manufacturing same: According to one embodiment, a semiconductor light emitting device includes: a semiconductor layer; a first electrode; a first interconnection layer; a second electrode; a second interconnection layer; a support substrate; a bonding layer; a first terminal; and a second terminal. The support substrate has a third face facing the semiconductor... Agent:

20140217442 - Semiconductor light-emitting element, light-source head, and image forming apparatus: A semiconductor light-emitting element includes a semiconductor layer including a light-emitting layer, and an upper reflective surface and a lower reflective surface between which the semiconductor layer is interposed. A distance L between the upper reflective surface and the lower reflective surface satisfies 0.20λ+0.5aλ≦L≦0.30λ+0.5aλ, where λ denotes a peak wavelength... Agent: Fuji Xerox Co., Ltd.

20140217436 - Submount-free light emitting diode (led) components and methods of fabricating same: Light emitting devices include a Light Emitting Diode (LED) chip having an anode contact and a cathode contact on a face thereof. A solder mask extends from the gap between the contacts onto one or both of the contacts. The LED chip may be mounted on a printed circuit board... Agent: Cree, Inc.

20140217449 - Substrate for optics and semiconductor light emitting device: To provide a substrate for optics provided with a fine-structure product which improves luminous efficiency of an LED while improving internal quantum efficiency IQE by decreasing the number of dislocation defects in a semiconductor layer, a substrate for optics (1) is provided with a fine-structure layer (12) including dots comprised... Agent: Asahi Kasei E-materials Corporation

20140217456 - Electronic apparatus: The present application provides an electronic apparatus including a substrate including a first electrode pad, a second electrode pad and an intermediate pad each disposed on one surface of the substrate and separated from one another. An electronic device is disposed on the substrate and including a first electrode unit... Agent: Samsung Electronics Co., Ltd.

20140217455 - Light-emitting device and lighting apparatus: According to one embodiment, a light-emitting device includes a ceramic substrate, a light-emitting element, a metal layer, a metal connector and a joint member. The ceramic substrate includes a main surface. The light-emitting element is provided on the main surface. The metal layer is provided on the main surface and... Agent: Toshiba Lighting & Technology Corporation

20140217457 - Light-emitting element chip and manufacturing method therefor: There is provided a light-emitting element chip which can be safely assembled and a manufacturing method therefor. A light-emitting element chip 10 has a semiconductor layer 12 including a luminescent layer 12a on a supporting portion 11. The supporting portion 11 has a concave shape, providing a support substrate in... Agent: Dowa Electronics Materials Co., Ltd.

20140217458 - Method for manufacturing light-emitting element, and light-emitting element: Provided are a method of manufacturing a light-emitting element by which a light-emitting element (80) is manufactured through the following steps and a light-emitting element manufactured by employing the method. A light-emitting element layer (40) is formed on one face (32T) of a monocrystalline substrate (30A) for a light-emitting element.... Agent: Namiki Seimitsu Houseki Kabushikikaisha

20140217460 - Optoelectronic semiconductor chip: An optoelectronic semiconductor chip includes a semiconductor layer sequence having at least one active layer. Furthermore, the semiconductor chip has a top-side contact structure on a radiation main side of the semiconductor layer sequence and an underside contact structure on an underside situated opposite to the radiation main side. Furthermore,... Agent: Osram Opto Semiconductors Gmbh

20140217459 - Substrate for light emitting element and light emitting device: A substrate for light emitting element has a substrate main body, a first recessed part, and a second recessed part. The substrate main body is made of a glass ceramic having a reflectance of 90% or more at a wavelength of 460 nm. The first recessed part is arranged on... Agent: Asahi Glass Company, Limited

20140217461 - Bidirectional dual-scr cirtcuit for esd protection: An ESD protection circuit includes at least a first and a second silicon controlled rectifier (SCR) circuits. The first SCR circuit is coupled between the pad and the positive power supply terminal. The second SCR circuit is coupled between the pad and the ground terminal. At least one of the... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20140217462 - Vertical power component: A high-voltage vertical power component including a silicon substrate of a first conductivity type, and a first semiconductor layer of the second conductivity type extending into the silicon substrate from an upper surface of the silicon substrate, wherein the component periphery includes: a porous silicon ring extending into the silicon... Agent: Stmicroelectronics (tours) Sas

20140217463 - Bipolar semiconductor switch and a manufacturing method therefor: A bipolar semiconductor switch having a semiconductor body is provided. The semiconductor body includes a first p-type semiconductor region, a second p-type semiconductor region, and a first n-type semiconductor region forming a first pn-junction with the first p-type semiconductor region and a second pn-junction with the second p-type semiconductor region.... Agent: Infineon Technologies Ag

20140217464 - Semiconductor device: In a semiconductor device, a trench gate has a bottom portion in a drift layer and a communication portion extending from a surface of a base layer to communicate with the bottom portion. A distance between adjacent bottom portions is smaller than a distance between adjacent communication portions in a... Agent: Denso Corporation

20140217465 - Semiconductor device: A semiconductor device in which a diode region and an IGBT region are formed on a same semiconductor substrate is provided. The diode region includes a plurality of first conductivity type anode layers exposed to a surface of the semiconductor substrate and separated from each other. The IGBT region includes... Agent: Toyota Jidosha Kabushiki Kaisha

20140217466 - Semiconductor device: An n-type region encloses an n-type well region is disclosed in which is disposed a high-side drive circuit. A high resistance polysilicon thin film configuring a resistive field plate structure of a high breakdown voltage junction termination region is disposed in spiral form on the n-type region. An OUT electrode,... Agent: Fuji Electric Co., Ltd.

20140217467 - Methods of forming substrates comprised of different semiconductor materials and the resulting device: Obtaining a structure comprised of first and second layers of a first semiconductor materials and a strain relief buffer (SRB) layer between the first and second layers, forming a sidewall spacer on the sidewalls of an opening in the second layer, and forming a third semiconductor material in the opening,... Agent: Globalfoundries Inc.

20140217469 - Ga2o3 semiconductor element: A Ga2O3 semiconductor element includes: an n-type β-Ga2O3 single crystal film, which is formed on a high-resistance β-Ga2O3 substrate directly or with other layer therebetween; a source electrode and a drain electrode, which are formed on the n-type β-Ga2O3 single crystal film; and a gate electrode, which is formed on... Agent:

20140217470 - Ga2o3 semiconductor element: Provided is a high-quality Ga2O3 semiconductor element. Provided is, as one embodiment of the present invention, a Ga2O3 MISFET (10), which includes: an n-type α-(AlxGa1-x)2O3 single crystal film (3), which is formed on an α-Al2O3 substrate (2) directly or with other layer therebetween, and is composed of an α-(AlxGa1-x)2O3 single... Agent: National Institute Of Information And Communications Technology

20140217471 - Ga2o3 semiconductor element: Provided is a high-quality Ga2O3 semiconductor element. Provided is, as one embodiment of the present invention, a Ga2O3 MESFET (10), which includes: an n-type α-(AlxGa1-x)2O3 single crystal film (3), which is formed on an α-Al2O3 substrate (2) directly or with other layer therebetween, and is composed of an α-(AlxGa1-x)2O3 single... Agent: Tamura Corporation

20140217468 - Planar semiconductor growth on iii-v material: A semiconductor structure includes a III-V monocrystalline layer and a germanium surface layer. An interlayer is formed directly between the III-V monocrystalline layer and the germanium surface layer from a material selected to provide stronger nucleation bonding between the interlayer and the germanium surface layer than nucleation bonding that would... Agent: International Business Machines Corporation

20140217472 - Method for fabricating mesa sidewall with spin coated dielectric material and semiconductor element thereof: A method for fabricating a mesa sidewall with a spin coated dielectric material and a semiconductor element fabricated by the same are provided in the present invention. The method includes the steps of: disposing an object on a semiconductor substrate; performing a spin coating process to coat with a liquid... Agent: National Central University

20140217473 - Device comprising nanostructures and method of manufacturing thereof: A method for manufacturing of a device including a first substrate including a plurality of sets of nanostructures arranged on the first substrate, wherein each of the sets of nanostructures is individually electrically addressable, the method including the steps of: providing a substrate having a first face, the substrate having... Agent:

20140217474 - Unit pixel of image sensor and image sensor including the same: A unit pixel of an image sensor includes a photoelectric conversion region, a floating diffusion region, and a transfer gate. The photoelectric conversion region is in an active region defined by an isolation region of a semiconductor substrate. The photoelectric conversion region generates electric charges corresponding to incident light. The... Agent:

20140217475 - Manufacturing method of solid-state image pickup device and solid-state image pickup device: In a manufacturing method of a solid-state image pickup device according to an embodiment, a transfer gate electrode is formed in a predetermined position on an upper surface of a first conductive semiconductor area, through a gate insulating film. A second conductive charge storage area is formed in an area... Agent: Kabushiki Kaisha Toshiba

20140217476 - Tdi-type linear image sensor: In a TDI-type linear image sensor in which pixels are constituted of CCDs (Charge Coupled Devices) of n phases (n being an integer not smaller than 3), a gate opening portion and a gate non-opening portion functioning as a TDI transfer channel (15) are formed in all of transfer gates... Agent: Mitsubishi Electric Corporation

20140217477 - Electric field directed loading of microwell array: An apparatus includes a device substrate including an array of sensors. Each sensor of the array of sensors can include a electrode structure disposed at a surface of the device substrate. The apparatus further includes a wall structure overlying the surface of the device substrate and defining an array of... Agent: Life Technologies Corporation

20140217478 - Cmos ultrasonic transducers and related apparatus and methods: CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be... Agent: Butterfly Network, Inc.

20140217479 - Finfet with dual workfunction gate structure: Disclosed are a method to fabricate a semiconductor device having a two-layered gate structure, and so fabricated a semiconductor. The gate threshold voltage can be tuned by using two metal layers with different workfunctions, disposed over a fin structure on a substrate and extending in parallel to the current flow... Agent:

20140217482 - Integrated circuits having replacement gate structures and methods for fabricating the same: A method of fabricating an integrated circuit includes forming an interlayer dielectric (ILD) layer over a dummy gate stack. The dummy gate stack includes a dummy gate structure, a hardmask layer, and sidewall spacers formed over a semiconductor substrate. The method further includes removing at least an upper portion of... Agent: Globalfoundries, Inc.

20140217480 - Methods of forming silicon/germanium protection layer above source/drain regions of a transistor and a device having such a protection layer: Disclosed herein are various methods of forming a silicon/germanium protection layer above source/drain regions of a transistor. One method disclosed herein includes forming a plurality of recesses in a substrate proximate the gate structure, forming a semiconductor material in the recesses, forming at least one layer of silicon above the... Agent: Globalfoundries Inc.

20140217484 - One-time programmable memory and method for making the same: A one time programmable nonvolatile memory formed from metal-insulator-semiconductor cells. The cells are at the crosspoints of conductive gate lines and intersecting doped semiconductor lines formed in a semiconductor substrate.... Agent: Kilopass Technology, Inc.

20140217481 - Partial sacrificial dummy gate with cmos device with high-k metal gate: A gate structure in a semiconductor device includes: a gate stack formed on a substrate with three sections: a bottom portion, a top portion, and a sacrificial cap layer over the top portion; gate spacers; source and drain regions; a nitride encapsulation over top and sidewalls of the gate stack... Agent: International Business Machines Corporation

20140217483 - Semiconductor devices including gate pattern, multi-channel active pattern and diffusion layer: A semiconductor device includes a gate pattern on a substrate, a multi-channel active pattern under the gate pattern to cross the gate pattern and having a first region not overlapping the gate pattern and a second region overlapping the gate pattern, a diffusion layer in the multi-channel active pattern along... Agent:

20140217485 - Stress engineered multi-layers for integration of cmos and si nanophotonics: A method of forming an integrated photonic semiconductor structure having a photonic device and a CMOS device may include depositing a first silicon nitride layer having a first stress property over the photonic device, depositing an oxide layer having a stress property over the deposited first silicon nitride layer, and... Agent: International Business Machines Corporation

20140217486 - Solid-state image pickup unit, method of manufacturing solid-state image pickup unit, and electronic apparatus: There is provided a back-illuminated type solid-state image pickup unit, in which a pad wiring line is provided on a light reception surface, capable of improving light reception characteristics in a photoelectric conversion section by thinning an insulating film in the back-illuminated type solid-state image pickup unit. A solid-state image... Agent: Sony Corporation

20140217487 - Stt-mram and method of manufacturing the same: A planar STT-MRAM comprises apparatus, a method of operating a spin-torque magnetoresistive memory and a plurality of magnetoresistive memory element having spin-transfer torques acting on a recording layer from a MTJ stack and a novel magnetoresistance with a spin-valve layer. The spin-valve layer is field-reversible between two stable magnetization states... Agent: T3memory, Inc.

20140217488 - 3-d memory arrays: A 3-D memory array comprises a plurality of elevationally extending strings of memory cells. An array of select devices is elevationally over and individually coupling with individual of the strings. The select devices individually comprise a channel, gate dielectric proximate the channel, and gate material proximate the gate dielectric. The... Agent: Micron Technology, Inc.

20140217489 - A method of making a split gate non-volatile floating gate memory cell having a separate erase gate, and a memory cell made thereby: A non-volatile memory cell has a single crystalline substrate of a first conductivity type with a top surface. A first region of a second conductivity type is in the substrate along the top surface. A second region of the second conductivity type is in the substrate along the top surface,... Agent: Silicon Storage Technology. Inc.

20140217490 - Nonvolatile memory device and method of fabricating the same: In a nonvolatile memory device and a method for fabricating the same, a device comprises a substrate, a trench in the substrate and a first gate pattern comprising a first bottom gate electrode having a first portion in the trench and having a second portion on the first portion and... Agent: Samsung Electronics Co., Ltd.

20140217491 - Dense arrays and charge storage devices: There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.... Agent: Sandisk 3d LLC

20140217492 - Charge-trap type flash memory device having low-high-low energy band structure as trapping layer: A charge-trap type flash memory device having a low-high-low energy band as a trapping layer embeds Al2O3 between Si3N4 and HfO2 as a CT layer. Most injected charged can be trapped at an interface of Si3N4/Al2O3. Al2O3 can also provide a high blocking effect for electronic dissipation. Therefore this invention... Agent: National Tsing Hua University

20140217493 - Non-volatile semiconductor storage device and method of manufacturing the same: A non-volatile semiconductor storage device has a plurality of memory strings to each of which a plurality of electrically rewritable memory cells are connected in series. Each of the memory strings includes first semiconductor layers each having a pair of columnar portions extending in a vertical direction with respect to... Agent: Kabushiki Kaisha Toshiba

20140217494 - Nonvolatile semiconductor memory device and manufacturing method thereof: First and second memory cells have first and second channels, first and second tunnel insulating films, first and second charge storage layers formed of an insulating film, first and second block insulating films, and first and second gate electrodes. A first select transistor has a third channel, a first gate... Agent: Kabushiki Kaisha Toshiba

20140217495 - Integrated circuit with power and sense transistors: An integrated circuit may include a semiconductor portion with a power transistor including first gate trenches that cross a first region and a sense transistor including second gate trenches that cross a second region. Each gate trench extends in a longitudinal direction and comprises a gate electrode and a field... Agent: Infineon Technologies Austria Ag

20140217497 - Mosfet with curved trench feature coupling termination trench to active trench: A metal oxide semiconductor field effect transistor (MOSFET) in and on a semiconductor surface provides a drift region of a first conductivity type. A plurality of active area trenches in the drift region, and first and second termination trenches are each parallel to and together sandwiching the active area trenches.... Agent: Texas Instruments Incorporated

20140217496 - Semiconductor device and method of manufacturing the same: To realize a semiconductor device having a power MOSFET satisfying both a low conduction resistance and a high junction breakdown voltage by a simple and easy manufacturing method. Over an n-type substrate, a p-type epitaxial layer of a low concentration is formed, and, in an active part, a plurality of... Agent: Renesas Electronics Corporation

20140217498 - Recessed access devices and gate electrodes: Recessed access transistor devices used with semiconductor devices may include gate electrodes having materials with multiple work functions, materials that are electrically isolated from each other and supplied with two or more voltage supplies, or materials that create a diode junction within the gate electrode.... Agent: Micron Technology, Inc.

20140217499 - Methods for forming semiconductor regions in trenches: A structure includes a semiconductor substrate including a first semiconductor material. A portion of the semiconductor substrate extends between insulation regions in the semiconductor substrate. The portion of the semiconductor substrate has a (111) surface and a bottom surface. The (111) surface is slanted and has a top edge and... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20140217500 - Semiconductor device with low on resistance and high breakdown voltage: A semiconductor device includes an epitaxial layer of semiconductor material of a first conductivity type, a body region of a second (opposite) conductivity type extending into the epitaxial layer from a main surface of the epitaxial layer, a source region of the first conductivity type disposed in the body region,... Agent: Infineon Technologies Ag

20140217501 - Semiconductor device and method for fabricating the same: The invention provides a semiconductor device, including: a substrate having a first conductivity type, including: a body region having the first conductivity type; a source region formed in the body region; a drift region having a second conductivity type adjacent to the body region; and a drain region formed in... Agent: Vanguard International Semiconductor Corporation

20140217502 - Diode structure and method for wire-last nanomesh technologies: In one aspect, a method of fabricating an electronic device includes the following steps. An alternating series of device and sacrificial layers are formed in a stack on an SOI wafer. Nanowire bars are etched into the device/sacrificial layers such that each of the device layers in a first portion... Agent: International Business Machines Corporation

20140217505 - Double patterning method for semiconductor devices: A method of fabricating a semiconductor device is disclosed. The exemplary method includes providing a substrate including a device layer and a sacrificial layer formed over the device layer and patterning the sacrificial layer thereby defining a cut pattern. The cut pattern of the sacrificial layer having an initial width.... Agent: Taiwan Semiconductor Manufacturing Company Ltd.

20140217504 - Finfet structure and method to adjust threshold voltage in a finfet structure: FinFET structures and methods of manufacturing the FinFET structures are disclosed. The method includes performing an oxygen anneal process on a gate stack of a FinFET structure to induce Vt shift. The oxygen anneal process is performed after sidewall pull down and post silicide.... Agent: International Business Machines Corporation

20140217503 - Silicon-on-insulator radio-frequency device and method of forming the same: A silicon-on-insulator (SOI) radio-frequency (RF) device is disclosed, the SOI RF device includes: a silicon substrate; a buried oxide layer formed on the silicon substrate; a device layer formed on the buried oxide layer, the device layer including an RF device; a first dielectric layer covering the device layer; a... Agent: Shanghai Huahong Grace Semiconductor Manufacturing Corporation

20140217506 - Diode structure and method for finfet technologies: A method of fabricating an electronic device includes the following steps. A SOI wafer is provided having a SOI layer over a BOX. An oxide layer is formed over the SOI layer. At least one first set and at least one second set of fins are patterned in the SOI... Agent: International Business Machines Corporation

20140217508 - Diode structure and method for finfet technologies: A method of fabricating an electronic device includes the following steps. A SOI wafer is provided having a SOI layer over a BOX. An oxide layer is formed over the SOI layer. At least one first set and at least one second set of fins are patterned in the SOI... Agent: International Business Machines Corporation

20140217507 - Diode structure and method for gate all around silicon nanowire technologies: A method of fabricating an electronic device includes the following steps. A SOI wafer is provided having a SOI layer over a BOX. At least one first/second set of nanowires and pads are patterned in the SOI layer. A conformal gate dielectric layer is selectively formed surrounding a portion of... Agent: International Business Machines Corporation

20140217509 - Diode structure and method for gate all around silicon nanowire technologies: A method of fabricating an electronic device includes the following steps. A SOI wafer is provided having a SOI layer over a BOX. At least one first/second set of nanowires and pads are patterned in the SOI layer. A conformal gate dielectric layer is selectively formed surrounding a portion of... Agent: International Business Machines Corporation

20140217510 - Semiconductor device: Provided is a semiconductor device which uses a comb-like N-type MOS transistor as an ESD protection element and is capable of uniformly operating the entire comb-like N-type MOS transistor. By adjusting a length L of a gate electrode of the N-type MOS transistor used as the ESD protection element in... Agent: Seiko Instruments Inc.

20140217511 - Semiconductor device having an esd protection circuit: An ESD protection circuit having a smaller area is provided. The ESD protection circuit includes: a P-type diffusion resistor 12 whose one end is connected to an input terminal 11 formed in the N-type well; a diode 14 disposed between the diffusion resistor 12 and the N-type well connected to... Agent: Seiko Instruments Inc.

20140217512 - Integrated circuits having dummy gate electrodes and methods of forming the same: A method of forming an integrated circuit comprises forming at least one gate electrode of at least one active transistor, and at least one first dummy gate electrode. The method also comprises forming a first doped region disposed in the substrate and adjacent to a first side wall of the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20140217514 - N-channel and p-channel end-to-end finfet cell architecture with relaxed gate pitch: A finFET block architecture uses end-to-end finFET blocks in which the fin lengths are at least twice the contact pitch, whereby there is enough space for interlayer connectors to be placed on the proximal end and the distal end of a given semiconductor fin, and on the gate element on... Agent: Synopsys, Inc.

20140217513 - Semiconductor integrated circuit device: A first cell having a cell height N times as large as a reference cell height (N is an integer equal to or more than 2) is adjoined by a second cell in the cell width direction. A diffusion interconnect made of an impurity diffusion region is formed under a... Agent: Panasonic Corporation

20140217515 - Semiconductor integrated circuit: According to embodiments, there is provided a semiconductor device, including: a first area including plural transistors formed therein; and a second area including plural dummy transistors formed therein, the second area surrounding the first area, wherein a pitch of the dummy transistors is equal to or less than a central... Agent: Kabushiki Kaisha Toshiba

20140217516 - Cmos image sensor: A CMOS image sensor includes a photodiode, a plurality of transistors for transferring charges accumulated at the photodiode to one column line, and a voltage dropping element connected to a gate electrode of at least one transistor among the plurality of transistors for expanding a saturation region of the transistor... Agent: Intellectual Ventures Ii LLC

20140217518 - Conductor structure and method: The semiconductor pads include outside perimeters each having one side coupled to a respective active layer. Impurities are implanted along the outside perimeters to form outside lower resistance regions on the pads. Openings are then formed in the stack of the semiconductor pads to expose a landing area for interlayer... Agent:

20140217517 - Integrated circuits including finfet devices with lower contact resistance and reduced parasitic capacitance and methods for fabricating the same: Integrated circuits and methods for fabricating integrated circuits are provided. In one example, an integrated circuit includes a semiconductor substrate. A first fin and a second fin are adjacent to each other extending from the semiconductor substrate. The first fin has a first upper section and the second fin has... Agent: Globalfoundries, Inc.

20140217519 - Semiconductor device and method of manufacturing the same: A transistor device comprising epitaxial LDD and Halo regions and a method of manufacturing the same are disclosed. According to embodiments of the present disclosure, the method may comprise: forming a gate stack on a semiconductor substrate; forming a gate spacer which covers the top of the gate stack and... Agent: Institute Of Microelectronics, Chinese Academy Of Sciences

20140217520 - Air-spacer mos transistor: A MOS transistor including, above a gate insulator, a conductive gate stack having a height, a length, and a width, this stack having a lower portion close to the gate insulator and an upper portion, wherein the stack has a first length in its lower portion, and a second length... Agent: Stmicroelectronics (crolles 2) Sas

20140217521 - Mems device with stress relief structures: An encapsulated MEMS device includes stress-relief trenches in a region of its substrate that surrounds the movable micromachined structures and that is covered by a cap, such that the trenches are fluidly exposed to a cavity between the substrate and the cap. A method of fabricating a MEMS device includes... Agent: Analog Devices, Inc.

20140217522 - Microphone structure: A microphone structure is disclosed. The microphone structure comprises a substrate penetrated with at least one opening chamber and having an insulation surface. A conduction layer is arranged on the insulation surface and arranged over the opening chamber. An insulation layer is arranged on the conduction layer and having a... Agent:

20140217523 - Housing for a semiconductor chip and semiconductor chip with a housing: A housing for a semiconductor chip has an injection molded body, in which an accommodating area for accommodating the semiconductor chip is provided. The injection-molded body has at least one metallization for making electrical contact with the semiconductor chip.... Agent: Epcos Ag

20140217529 - Co/ni multilayers with improved out-of-plane anisotropy for magnetic device applications: A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X)n or (CoX)n composition where n is from 2 to 30, X is one of V, Rh, Ir, Os, Ru, Au, Cr, Mo,... Agent: Headway Technologies, Inc.

20140217530 - Co/ni multilayers with improved out-of-plane anisotropy for magnetic device applications: A MTJ for a spintronic device that is a domain wall motion device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X)n or (CoX)n composition where n is from 2 to 30, X is one of V,... Agent: Headway Technologies, Inc.

20140217531 - Co/ni multilayers with improved out-of-plane anisotropy for magnetic device applications: A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X)n or (CoX)n composition where n is from 2 to 30, X is one of V, Rh, Ir, Os, Ru, Au, Cr, Mo,... Agent: Headway Technologies, Inc.

20140217524 - Electrostatically controlled magnetic logic device: A magnetic logic cell includes a first electrode portion, a magnetic portion arranged on the first electrode, the magnetic portion including an anti-ferromagnetic material or a ferrimagnetic material, a dielectric portion arranged on the magnetic portion, and a second electrode portion arranged on the dielectric portion.... Agent: International Business Machines Corporation

20140217532 - Magnetic tunnel junction device and fabrication: A method of forming a magnetic tunnel junction (MTJ) device includes forming a first MTJ cap layer on a MTJ structure. The first MTJ cap layer includes a first non-nitrified metal. The method also includes forming a second MTJ cap layer over the first MTJ cap layer. The second MTJ... Agent: Qualcomm Incorporated

20140217525 - Method of improving sensitivity of terrestrial magnetism sensor and apparatus using the same: Disclosed herein are a method of improving sensitivity of a terrestrial magnetism sensor and an apparatus using the same. A method of forming a terrestrial magnetism sensor includes: cleaning a surface of the terrestrial magnetism sensor; and depositing a thermoelectric material as a thin film on the cleaned surface of... Agent: Samsung Electro-mechanics Co., Ltd.

20140217527 - Method of manufacturing mram memory elements: A STT-MRAM comprises a method to form magnetic random access memory (MRAM) element array having ultra small dimensions using double photo exposures and etch of their hard masks. The memory cells are located at the cross section of two ultra-narrow photo-resist lines suspended between two large photo-resist bases. Array of... Agent: T3memory, Inc.

20140217526 - Novel perpendicular magnetoresistive elements: A perpendicular magnetoresistive element comprises anovel buffer layer provided on a surface of the recording layer, which is opposite to a surface of the recording layer where the tunnel barrier layer is provided, wherein at least the portion of the buffer layer interfacing to the recording layer contains a rocksalt... Agent: T3memory, Inc.

20140217528 - Spin-torque magnetoresistive memory element and method of fabricating same: A spin-torque magnetoresistive memory element has a high magnetoresistance and low current density. A free magnetic layer is positioned between first and second spin polarizers. A first tunnel barrier is positioned between the first spin polarizer and the free magnetic layer and a second tunnel barrier is positioned between the... Agent: Everspin Technologies, Inc.

20140217534 - Magnetic memory element and storage device using the same: A magnetic miniaturized memory element with improved thermal stability of magnetization includes a first magnetic layer, an insulating layer that is formed on the first magnetic layer, a second magnetic layer that is formed on the insulating layer, and an expanded interlayer insulating film that comes into contact with side... Agent: Fuji Electric Co., Ltd.

20140217533 - Magnetic sensor integrated in a chip for detecting magnetic fields perpendicular to the chip and manufacturing process thereof: An integrated magnetic sensor formed by a semiconductor chip having a surface and accommodating a magnetic via and a sensing coil. The magnetic via is formed by a cylindrical layer of ferromagnetic material that extends perpendicular to the surface of the first chip and has in cross-section an annular shape... Agent: Stmicroelectronics S.r.i.

20140217535 - Thin film photovoltaic panels and repair methods: Conductive layer(s) in a thin film photovoltaic (TFPV) panel are divided by first scribe curves into photovoltaic cells connected in series. At least one of the layers is scribed to isolate a shunt defect in a cell from parts of that cell away from the defect. The isolation scribes can... Agent: Purdue Research Foundation

20140217536 - Polarized light detection system: A polarized light detection system includes a detection apparatus, a power source, and a photoresistor. The detection apparatus, power source and photoresistor are electrically connected with wires to form a galvanic circle. The photoresistor includes a photosensitive material layer with a first surface and a second surface opposite to each... Agent: Tsinghua University

20140217537 - Re-entrant mirror photodetector with waveguide mode focusing: A photonic integrated circuit (I/C) includes a focusing sidewall or in-plane surface that redirects and focuses light from a waveguide to a photodetector structure. The focusing includes redirecting an optical signal to a width smaller than a width of the waveguide. The focusing of the light allows the photodetector structure... Agent:

20140217539 - Semiconductor optoelectronics devices: A semiconductor device comprising a semiconductor substrate with a plurality of photo-diodes arranged in the semiconductor substrate with interconnect layers defining apertures at the photo-diodes and a first polymer which fills the gaps such as to cover the photo-diode. Further, layers of color filters are arranged on top the gap... Agent: Silecs Oy

20140217538 - Solid-state image sensor and camera: A solid-state image sensor includes a structure having a semiconductor layer in which a plurality of photoelectric converters are arranged, a light blocking member arranged above a face of the structure and including a plurality of circular openings each corresponding to at least one of the photoelectric converters, a first... Agent: Canon Kabushiki Kaisha

20140217540 - Fully depleted diode passivation active passivation architecture: A fully depleted “diode passivation active passivation architecture” (DPAPA) produces a photodiode structure which includes a substrate, a highly-doped buffer layer of a first carrier doping type above the substrate, a low-doped or undoped semiconductor active layer of the first carrier doping type above the buffer layer, a low-doped or... Agent: Teledyne Scientific & Imaging, LLC

20140217541 - Back-side illuminated image sensor with a junction insulation: A method for forming a back-side illuminated image sensor, including the steps of: a) forming, from the front surface, doped polysilicon regions, of a conductivity type opposite to that of the substrate, extending in depth orthogonally to the front surface and emerging into the first layer; b) thinning the substrate... Agent: Stmicroelectronics (crolles 2) Sas

20140217542 - Semiconductor device, manufacturing method thereof, and electronic apparatus: A semiconductor device, which is configured as a backside illuminated solid-state imaging device, includes a stacked semiconductor chip which is formed by bonding two or more semiconductor chip units to each other and in which, at least, a pixel array and a multi-layer wiring layer are formed in a first... Agent: Sony Corporation

20140217543 - Ingaas photodiode array: The invention relates to an InGaAs photodiode army (101) and to the method for manufacturing same, wherein said array includes: a cathode including at least one indium-phosphide substrate layer (4) and an active gallium-indium arsenide layer (5); and a plurality of anodes (3) at least partially formed in the active... Agent: New Imaging Technologies

20140217544 - Methods of forming a transistor device on a bulk substrate and the resulting device: One illustrative method disclosed herein includes forming a trench within an isolated region of a bulk semiconductor substrate, forming a region of an insulating material in the trench and forming a semiconductor material within the trench and above the upper surface of the region of insulating material. A substrate disclosed... Agent: Globalfoundries Inc.

20140217545 - Semiconductor device and method for fabricating the same: A semiconductor device includes a plurality of first conductive patterns separated by a damascene pattern, a second conductive pattern buried in the damascene pattern, and a spacer including an air gap between the second conductive pattern and the first conductive patterns.... Agent: Sk Hynix Inc.

20140217546 - Helical spiral inductor between stacking die: The present disclosure relates to a multi-level integrated inductor that provides for a good inductance and Q-factor. In some embodiments, the integrated inductor has a first inductive structure with a first metal layer disposed in a first spiral pattern onto a first IC die and a second inductive structure with... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20140217547 - Semiconductor package with air core inductor (aci) and magnetic core inductor (mci): Semiconductor die packaged with air core inductors (ACIs) and magnetic core inductors (MCIs), or with multiple MCIs, are described. In a first example, a semiconductor package includes a semiconductor die, one or more air core inductors (ACIs) coupled to the semiconductor die, and one or more magnetic core inductors (MCIs)... Agent:

20140217549 - Decoupling mim capacitor designs for interposers and methods of manufacture thereof: Decoupling metal-insulator-metal (MIM) capacitor designs for interposers and methods of manufacture thereof are disclosed. In one embodiment, a method of forming a decoupling capacitor includes providing a packaging device, and forming a decoupling MIM capacitor in at least two metallization layers of the packaging device.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20140217548 - Semiconductor device and method of manufacturing semiconductor device: A semiconductor device includes a substrate, a metal film on a portion of the substrate, a first dielectric film having a first portion on the metal film and a second portion on the substrate, the second portion being integral with the first portion, a lower electrode on the first portion,... Agent: Mitsubishi Electric Corporation

20140217550 - Metal film resistor structure and manufacturing method: A method is provided for manufacturing a semiconductor device with a metal film resistor structure. The method includes providing an insulation layer on the semiconductor device. A lower copper interconnect is formed in the insulation layer. The method also includes forming a cap layer on the insulation layer and the... Agent: Shanghai Ic R&d Center Co., Ltd.

20140217551 - Trench isolation for bipolar junction transistors in bicmos technology: Device structures, fabrication methods, and design structures for a bipolar junction transistor. A first isolation structure is formed in a substrate to define a boundary for a device region. A collector is formed in the device region, and a second isolation structure is formed in the device region. The second... Agent: International Business Machines Corporation

20140217552 - Variable capacitance device: A variable capacitance device includes a fixed substrate, a movable portion, driving electrodes, an RF capacitance electrode and an insulating film. The movable portion faces the fixed substrate and can change a gap between the movable portion and the fixed substrate. The driving electrodes are formed on the fixed substrate... Agent: Murata Manufacturing Co., Ltd.

20140217553 - Template layers for heteroepitaxial deposition of iii nitride semiconductor materials using hvpe processes: Methods of depositing III-nitride semiconductor materials on substrates include depositing a layer of III-nitride semiconductor material on a surface of a substrate in a nucleation HVPE process stage to form a nucleation layer having a microstructure comprising at least some amorphous III-nitride semiconductor material. The nucleation layer may be annealed... Agent: Soitec

20140217554 - Crystal laminate structure and method for producing same: A crystal laminate structure, in which crystals can be epitaxially grown on a β-Ga2O3-based substrate with high efficiency to produce a high-quality β-Ga2O3-based crystal film on the substrate; and a method for producing the crystal laminate structure are provided. The crystal laminate structure includes: a β-Ga2O3-based substrate, of which the... Agent: Tamura Corporation

20140217555 - Semiconductor device and manufacturing method thereof: A semiconductor device according to the present embodiment includes a semiconductor substrate. A plurality of line patterns are formed into stripes present above the semiconductor substrate. Each of the line patterns includes a narrow portion having a constricted width in a perpendicular direction to an extension direction of the line... Agent: Kabushiki Kaisha Toshiba

20140217557 - Method and apparatus for a seal ring structure: A wafer seal ring may be formed on a first and/or a second wafer. One or both of the first and/or second wafers may have one or more dies formed thereon. The wafer seal ring may be formed to surround the dies of a corresponding wafer. One or more die... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20140217556 - Methods for dicing a compound semiconductor wafer, and diced wafers and die obtained thereby: Methods are provided for using masking techniques and plasma etching techniques to dice a compound semiconductor wafer into dies. Using these methods allows compound semiconductor die to be obtained that have smooth side walls, a variety of shapes and dimensions, and a variety of side wall profiles. In addition, by... Agent: Avago Technologies GeneralIP(singapore) Pte. Ltd.

20140217558 - Semiconductor element: A semiconductor element includes a substrate and a semiconductor layer. The substrate has a first main face and a second main face. The semiconductor layer is formed on a side of one of the first main face and the second main face of the substrate. The substrate has a plurality... Agent: Nichia Corporation

20140217560 - Semiconductor device: A semiconductor device includes a semiconductor substrate having a first surface, a through silicon via (TSV) that is formed so that at least a part thereof penetrates through the semiconductor substrate, and an insulation ring. The insulation ring is formed so as to penetrate through the semiconductor substrate and so... Agent: Elpida Memory, Inc.

20140217559 - Semiconductor devices having through silicon vias and methods of fabricating the same: A semiconductor device is provided having an insulating layer on a semiconductor substrate. The insulating layer and the semiconductor substrate define a through hole penetrating the semiconductor substrate and the insulating layer. A through electrode is provided in the through hole. A spacer is provided between the semiconductor substrate and... Agent: Samsung Electronics Co., Ltd.

20140217561 - Double trench rectifier: A high power density or low forward voltage rectifier which utilizes at least one trench in both the anode and cathode. The trenches are formed in opposing surfaces of the substrate, to increase the junction surface area per unit surface area of the semiconductor die. This structure allows for increased... Agent: Vishay General Semiconductor, LLC

20140217562 - Power semiconductor device with an edge termination region: A power semiconductor device includes a semiconductor substrate, an active device region disposed in the semiconductor substrate, an edge termination region spaced laterally outward from the active device region in the semiconductor substrate, and first and second trenches. The first trench is disposed in the edge termination region and has... Agent:

20140217563 - Multifunction semiconductor package structure and method of manufacturing the same: A multifunction semiconductor package structure includes a substrate unit, a circuit unit, a support unit, a semiconductor unit, a package unit and an electrode unit. The substrate unit includes a substrate body and a first electronic element having a plurality of conductive contact portions. The circuit unit includes a plurality... Agent: Inpaq Technology Co., Ltd.

20140217564 - Semiconductor device with integrated antenna and manufacturing method therefor: There is disclosed a package comprising at least an integrated circuit embedded in an electrically non-conductive moulded material. The moulded material includes at least one moulded pattern on at least one surface thereof, and at least one electrically conductive track in the pattern. There is further provided at least one... Agent: Microsoft Corporation

20140217565 - Electrical connectivity of die to a host substrate: According to example configurations herein, an apparatus comprises a die and a host substrate. The die can include a first transistor and a second transistor. A surface of the die includes multiple conductive elements disposed thereon. The multiple conductive elements on the surface are electrically coupled to respective nodes of... Agent:

20140217566 - Double-sided package: Various embodiments of an integrated device package are disclosed herein. The package may include a leadframe having a first side and a second side opposite the first side. The leadframe can include a plurality of leads surrounding a die mounting region. A first package lid may be mounted on the... Agent: Analog Devices, Inc.

20140217567 - Semiconductor device and manufacturing method of the same: A semiconductor package includes a semiconductor chip, a protruding pillar electrode provided on the semiconductor chip, and resin covering the semiconductor chip and the pillar electrode. The resin has a concave part and exposes a front edge portion of the pillar electrode from the resin at the bottom face of... Agent: Fujitsu Semiconductor Limited

20140217568 - Semiconductor package with cantilever leads: A semiconductor package includes a metallic leadframe having a plurality of cantilever leads, a mounting area for mounting a die, and one or more non-conductive supports adjacent to a recessed surface of the cantilever leads to support the leads during die mount, wire bond, and encapsulation processes. Encapsulant encapsulates and... Agent: Texas Instruments Incorporated

20140217569 - Semiconductor device and method of manufacturing the same: A semiconductor device according to the present invention includes a plurality of semiconductor chips, a plate electrode disposed on the plurality of semiconductor chips for connecting the plurality of semiconductor chips, and an electrode disposed on the plate electrode. The electrode has a plurality of intermittent bonding portions to be... Agent: Mitsubishi Electric Corporation

20140217570 - Transistor outline housing and method for producing same: A transistor outline housing is provided that has bonding wires on an upper surface. The bonding wires are reduced in length and have connection leads with an excess length at an end opposite the bonding end.... Agent: Schott Ag

20140217572 - Heat sink package: The heat sink package includes a heat sink having a cavity on an upper surface thereof; a metal layer formed on the bottom surface of the cavity; a solder paste layer formed on the metal layer; a substrate on the solder paste layer; and a lead and a semiconductor chip... Agent: Fairchild Korea Semiconductor, Ltd.

20140217571 - Low profile zero/low insertion force package top side flex cable connector architecture: An integrated circuit package is presented. In an embodiment, the integrated circuit package has contact pads formed on the top side of a package substrate, a die electrically attached to the contact pads, and input/output (I/O) pads formed on the top side of the package substrate. The I/O pads are... Agent:

20140217573 - Low cost and high performance flip chip package: A low cost and high performance flip chip package is disclosed. By assembling the package using a substrate panel level process, a separate fabrication of a substrate is avoided, thus enabling the use of a coreless substrate. The coreless substrate may include multiple stacked layers of laminate dielectric films having... Agent: Broadcom Corporation

20140217575 - 3dic package comprising perforated foil sheet: A structure includes a thermal interface material, and a Perforated Foil Sheet (PFS) including through-openings therein, with a first portion of the PFS embedded in the thermal interface material. An upper layer of the thermal interface material is overlying the PFS, and a lower layer of thermal interface material is... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20140217574 - Composites comprised of aligned carbon fibers in chain-aligned polymer binder: A method for enhancing internal layer-layer thermal interface performance and a chip stack of semiconductor chips using the method. The method includes adding a thermosetting polymer to the thermal interface material, dispersing a plurality of nanofibers into the thermal interface material, and un-crosslinking the thermosetting polymer in the thermal interface... Agent: International Business Machines Corporation

20140217576 - Semiconductor package: A semiconductor package and a method of manufacturing the same are disclosed, wherein the semiconductor package includes a circuit board, a semiconductor chip mounted on the circuit board, an encapsulant positioned on the circuit board and encapsulating the semiconductor chip to the circuit board, and a thermal dissipating member positioned... Agent: Samsung Electronics Co., Ltd.

20140217577 - Semiconductor device and method for manufacturing a semiconductor device: A device includes a semiconductor chip including a first main face and a second main face, the second main face being the backside of the semiconductor chip. The second main face includes a first region and a second region, the second region being a peripheral region of the second main... Agent: Infineon Technologies Ag

20140217581 - Electronic component, mother substrate, and electronic component manufacturing method: An electronic component includes a plurality of electrodes provided in a rectangular or substantially rectangular box-shaped area on an upper surface of a substrate, an electronic component element mounted on the substrate by flip-chip bonding, and an identification mark. The identification mark is provided between a first electrode, which is... Agent: Murata Manufacturing Co., Ltd.

20140217584 - Flow underfill for microelectronic packages: A microelectronic assembly includes a first component with first conductive elements; a second component with second conductive elements; a bond metal; and an underfill layer. The posts have a height above the respective surface from which the posts project. A bond metal can be disposed between respective pairs of conductive... Agent: Tessera, Inc.

20140217579 - High density package interconnects: Electronic assemblies and methods including the formation of interconnect structures are described. In one embodiment an apparatus includes semiconductor die and a first metal bump on the die, the first metal bump including a surface having a first part and a second part. The apparatus also includes a solder resistant... Agent:

20140217582 - Semiconductor device: This invention provides a multi-pin semiconductor device as a low-cost flip-chip BGA. In the flip-chip BGA, a plurality of signal bonding electrodes in a peripheral area of the upper surface of a multilayer wiring substrate are separated into inner and outer ones and a plurality of signal through holes coupled... Agent: Renesas Electronics Corporation

20140217580 - Semiconductor device and method of fabricating the same: A semiconductor device includes a bonding pad on a semiconductor substrate, a bump on the bonding pad, a solder on the bump, and an anti-wetting layer between the bump and the solder extending along a sidewall of the bump, the anti-wetting layer having a first thickness T1 along the sidewall... Agent: Samsung Electronics Co., Ltd.

20140217583 - Semiconductor device including a buffer layer structure for reducing stress: A semiconductor device includes a semiconductor chip, wiring that is included in the semiconductor chip and has a coupling part between parts with different widths, a pad being formed above the wiring and in a position overlapping the coupling part, a bump being formed on the pad, a buffer layer... Agent: Seiko Epson Corporation

20140217578 - Semiconductor package process and structure thereof: A semiconductor package process includes the following steps, providing a first substrate having a first metal bump, the first metal bump comprises a joint portion having a first softening point; providing a second substrate having a second metal bump having a top surface, a lateral surface and a second softening... Agent: Chipbond Technology Corporation

20140217585 - 3d integrated circuit package with through-mold first level interconnects: 3D integrated circuit packages with through-mold first level interconnects and methods to form such packages are described. For example, a semiconductor package includes a substrate. A bottom semiconductor die has an active side with a surface area. The bottom semiconductor die is coupled to the substrate with the active side... Agent:

20140217586 - Package-on-package device: A package-on-package device includes memory chips side-by-side on a package substrate. Accordingly, it is possible to reduce a thickness of a semiconductor package. Further, data and command pads of a logic chip may be located to be adjacent to data and command pads of the memory chips. Accordingly, a routing... Agent:

20140217587 - Wafer leveled chip packaging structure and method thereof: A wafer-leveled chip packaging method, comprising the steps of: providing a wafer; attaching at least one first chip to the wafer; forming a first insulating layer on the wafer; forming a plurality of first conductive vias penetrating the first insulating layer, wherein parts of the first conductive vias are electrically... Agent: Invensas Corporation

20140217592 - Interconnect structure and method of making same: An interconnect structure and method of fabricating the same is provided. More specifically, the interconnect structure is a defect free capped interconnect structure. The structure includes a conductive material formed in a trench of a planarized dielectric layer which is devoid of cap material. The structure further includes the cap... Agent: International Business Machines Corporation

20140217588 - Methods of forming copper-based nitride liner/passivation layers for conductive copper structures and the resulting device: One illustrative method disclosed herein includes forming a trench/via in a layer of insulating material, forming a barrier layer in the trench/via, forming a copper-based seed layer on the barrier layer, converting at least a portion of the copper-based seed layer into a copper-based nitride layer, depositing a bulk copper-based... Agent: Globalfoundries Inc.

20140217591 - Multi-layer barrier layer for interconnect structure: A semiconductor device includes a dielectric layer positioned above a substrate of the semiconductor device and a recess defined in the dielectric layer. An adhesion barrier layer is positioned on and in direct contact with at least the sidewalls of the recess, a barrier layer interface being defined where the... Agent: Globalfoundries Inc.

20140217589 - Support structure for barrier layer of semiconductor device: Among other things, one or more support structures and techniques for forming such support structures within semiconductor devices are provided. The support structure comprises an oxide infused silicon layer that is formed within a trench of a dielectric layer on a substrate of a semiconductor device. The oxide infused silicon... Agent: Taiwan Semiconductor Manufacturing Company Limited

20140217590 - Through silicon via metallization: To achieve the foregoing and in accordance with the purpose of the present invention, a method for filling through silicon vias is provided. A dielectric layer is formed over the through silicon vias. A barrier layer, comprising tungsten, is deposited by CVD or ALD over the dielectric layer. The through... Agent: Lam Research Corporation

20140217593 - Electrical connecting element and method for manufacturing the same: An electrical connecting element for connecting a first substrate and a second substrate and a method for manufacturing the same are disclosed. The method of the present invention comprises: (A) providing a first substrate and a second substrate, wherein a first copper film is formed on the first substrate, a... Agent: National Chiao Tung University

20140217594 - Semiconductor device: Provided is a semiconductor device configured to prevent a penetration of moisture into an internal circuit. The moisture from a bonding pad to the internal circuit is blocked by providing an underlying polysilicon film (10) formed as a lower layer of a bonding pad, a bonding pad (1) formed above... Agent: Seiko Instruments Inc.

20140217595 - Mounting structure and manufacturing method for same: In a provided mounting structure, an electronic component such as a semiconductor chip having a fragile film is mounted on a substrate such as a circuit board with higher connection reliability. A junction that connects an electrode terminal (4) of an electronic component (1) and an electrode terminal (5) of... Agent: Panasonic Corporation

20140217599 - Bbul material integration in-plane with embedded die for warpage control: An apparatus including a die including a first side and an opposite second side including a device side with contact points and lateral sidewalls defining a thickness of the die; a primary core adjacent at least a pair of the lateral sidewalls of the die; and a build-up carrier coupled... Agent:

20140217596 - Power transistor arrangement and method for manufacturing the same: Various embodiments provide a power transistor arrangement. The power transistor arrangement may include a carrier; a first power transistor having a control electrode and a first power electrode and a second power electrode; and a second power transistor having a control electrode and a first power electrode and a second... Agent: Infineon Technologies Austria Ag

20140217601 - Semiconductor device: The present invention provides a semiconductor device. The semiconductor device comprises: a metal pad and a first specific metal layer routing. The metal pad is positioned on a first metal layer of the semiconductor device. The first specific metal layer routing is formed on a second metal layer of the... Agent: Mediatek Inc.

20140217602 - Semiconductor device: Provided is a semiconductor package with improved mounting property. A concave portion is provided in an insulating resin between an island for mounting a semiconductor chip thereon and an opposing lead, to thereby prevent contact between solder printed on a circuit board and the insulating resin. Self-alignment property in melting... Agent: Seiko Instruments Inc.

20140217597 - Semiconductor device and method of forming stress relieving vias for improved fan-out wlcsp package: A semiconductor device includes a semiconductor die. An encapsulant is disposed around the semiconductor die to form a peripheral area. An interconnect structure is formed over a first surface of the semiconductor die and encapsulant. A plurality of vias is formed partially through the peripheral area of the encapsulant and... Agent: Stats Chippac, Ltd.

20140217600 - Semiconductor device and method of manufacturing the same: The present invention includes a plate electrode to be a plate-shaped electrode member, an epoxy sheet serving as an integrated insulating sheet and provided on the plate electrode, a double printed board serving as a control board and provided on the epoxy sheet, and a board integrated electrode in which... Agent: Mitsubishi Electric Corporation

20140217598 - Semiconductor memory device and method for manufacturing same: According to one embodiment, a semiconductor memory device includes a plurality of interconnects of an nth layer, a plurality of interconnects of a (n+1)th layer, a plurality of stacked films of the nth layer, each of the plurality of stacked films of the nth layer including a memory element, an... Agent: Kabushiki Kaisha Toshiba

20140217610 - 3d semiconductor package interposer with die cavity: Disclosed herein is a method of forming a device, comprising mounting a plurality of first interconnects on one or more first integrated circuit dies. One or more second integrated circuit dies are mounted on a first side of an interposer. The interposer is mounted to at a second side to... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20140217605 - Interconnection structure for package and fabrication method thereof: An interconnection structure for a package is disclosed. The interconnection structure includes a substrate body having a conductive portion formed on a surface thereof; a first photosensitive dielectric layer formed on the surface of the substrate body and having a via for exposing the conductive potion; a conductive via formed... Agent: Siliconware Precision Industries Co., Ltd.

20140217604 - Package structure and methods of forming same: A semiconductor device includes a first die having a first active surface and a first backside surface opposite the first active surface, a second die having a second active surface and a second backside surface opposite the second active surface, and an interposer, the first active surface of the first... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20140217607 - Reduced stress tsv and interposer structures: A component can include a substrate and a conductive via extending within an opening in the substrate. The substrate can have first and second opposing surfaces. The opening can extend from the first surface towards the second surface and can have an inner wall extending away from the first surface.... Agent: Invensas Corporation

20140217603 - Semiconductor device and method of fabricating the same: A semiconductor device includes a via structure and a conductive structure. The via structure has a surface with a planar portion and a protrusion portion. The conductive structure is formed over at least part of the planar portion and not over at least part of the protrusion portion of the... Agent:

20140217609 - Semiconductor device and method of forming conductive vias with trench in saw street: A semiconductor wafer has a plurality of semiconductor die separated by a peripheral region. A trench is formed in the peripheral region of the wafer. A via is formed on the die. The trench extends to and is continuous with the via. A first conductive layer is deposited in the... Agent: Stats Chippac, Ltd.

20140217608 - Semiconductor module, circuit board: [Solution] A semiconductor module includes a wiring substrate where a via and a interconnecting pattern are formed, a semiconductor device disposed on a first surface side of the wiring substrate, and a bonding portion including a first bonding layer disposed on the wiring substrate side and a second bonding layer... Agent: Ngk Spark Plug Co., Ltd.

20140217611 - Stacked multilayer structure and manufacturing method thereof: A stacked multilayer structure according to an embodiment of the present invention comprises: a stacked layer part including a plurality of conducting layers and a plurality of insulating layers, said plurality of insulating layers being stacked alternately with each layer of said plurality of conducting layers, one of said plurality... Agent: Kabushiki Kaisha Toshiba

20140217606 - Three-dimensional monolithic electronic-photonic integrated circuit: A three-dimensional monolithic electronic-photonic integrated circuit and a method of manufacturing the same. The electronic-photonic integrated circuit may include a photonic element formed in a sealed space of a substrate and an electronic element formed on the substrate. The substrate may include a first substrate and a second substrate that... Agent: Samsung Electronics Co., Ltd.

20140217612 - Electronic fuse having a damaged region: An electronic fuse structure including an Mx level comprising an Mx metal, and an Mx+1 level above the Mx level, the Mx+1 level including an Mx+1 metal and a via electrically connecting the Mx metal to the Mx+1 metal in a vertical orientation, where the Mx+1 metal comprises a thick... Agent: International Business Machines Corporation

20140217614 - Integrated circuit film and method of manufacturing the same: An integrated circuit film and a method of manufacturing the same are disclosed. The integrated circuit film includes a circuit board containing a circuit route; a first set of pads located on a first surface of the circuit board and configured to be applicable to ISO 7816 standard; and a... Agent: Mxtran Inc.

20140217613 - Integrated device and fabrication process thereof: An integrated device includes a die attach pad, a main die, a stacked die, and a mold compound. The main die has a first (e.g., bottom) surface attached to the die attach pad and has a second (e.g., top) surface. The stacked die is attached to the second surface of... Agent: O2micro Inc.

20140217615 - Method of making a system-in-package device, and a system-in-package device: A method of making a system-in-package device, and a system-in-package device is disclosed. In the method, at least one first species die with predetermined dimensions, at least one second species die with predetermined dimensions, and at least one further component of the system-in-device is included in the system-in package device.... Agent: Murata Electronics Oy

20140217616 - Stack package and method of manufacturing stack package: A stack package includes a first semiconductor chip having a plurality of first pads, and a second semiconductor chip stacked on the first semiconductor chip and having a plurality of second pads corresponding to the first pads respectively, the second pads connected to the corresponding first pads. The first and... Agent: Samsung Electronics Co., Ltd.

20140217617 - Multi-die wirebond packages with elongated windows: A microelectronic package can include a substrate having first and second opposed surfaces extending in first and second transverse directions and an opening extending between the first and second surfaces and defining first and second distinct parts each elongated along a common axis extending in the first direction, first and... Agent: Invensas Corporation

20140217618 - Method for making electronic device with liquid crystal polymer and related devices: A method of making an electronic device includes forming an electrically conductive pattern on a substrate, forming a coverlay layer on the substrate and the electrically conductive pattern, forming a partially cured, tacky adhesive layer on the coverlay layer, and forming openings in the coverlay layer and the partially cured,... Agent: Harris Corporation

20140217619 - Microelectronic package having wire bond vias and stiffening layer: Microelectronic components and methods forming such microelectronic components are disclosed herein. The microelectronic components may include a plurality of electrically conductive vias in the form of wire bonds extending from a bonding surface of a substrate, such as surfaces of electrically conductive elements at a surface of the substrate.... Agent: Invensas Corporation

20140217620 - Semiconductor device and method for manufacturing the same: An electronic device includes: a substrate having first and second surfaces, wherein the first surface is opposite to the second surface; a first electronic element mounted on the first surface of the substrate; a second electronic element mounted on the second surface of the substrate; and a resin mold sealing... Agent: Denso Corporation

20140217621 - Encapsulation film: The present application relates to an encapsulating film, an electronic device and a method of manufacturing the same. In the present application, an encapsulating film having excellent moisture blocking property, handleability, workability and durability and a structure including a diode encapsulated with the encapsulating film may be provided.... Agent: Lg Chem, Ltd.

20140217622 - Semiconductor package resin composition and usage method thereof: A semiconductor package resin composition of the present invention includes an epoxy resin, a curing agent, inorganic particles, nano-particles surface treated with a silane that contains a photopolymerizable functional group, and a photopolymerization initiator.... Agent:

  
  
  
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