|Active solid-state devices (e.g., transistors, solid-state diodes) patents - Monitor Patents|
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Active solid-state devices (e.g., transistors, solid-state diodes)Below are recently published patent applications awaiting approval from the USPTO. Recent week's RSS XML file available below.
Listing for abstract view: USPTO application #, Title, Abstract excerpt,Patent Agent. Listing format for list view: USPTO National Class full category number, title of the patent application. 01/22/2015 > 257 patent applications in 96 patent subcategories.
20150021538 - Device switching using layered device structure: A resistive switching device. The device includes a first electrode comprising a first metal material overlying the first dielectric material and a switching material comprising an amorphous silicon material. The device includes a second electrode comprising at least a second metal material. In a specific embodiment, the device includes a... Agent:
20150021537 - Method of making a resistive random access memory device: The disclosed technology generally relates to semiconductor devices, and relates more particularly to resistive random access memory devices and methods of making the same. In one aspect, a method of forming a resistive random access memory cell of a random access memory device includes forming a first electrode and forming... Agent:
20150021542 - Memory cell of resistive random access memory and manufacturing method thereof: A memory cell of a resistive random access memory and a manufacturing method thereof are provided. The method includes the following steps. A first electrode is formed. A metal oxide layer is formed on the first electrode. An electrode buffer stacked layer is formed on the metal oxide layer and... Agent:
20150021540 - Method of making a resistive random access memory device: The disclosed technology generally relates to the field of semiconductor processing and more particularly to resistive random access memory and methods for manufacturing such memory. In one aspect, a method of fabricating a memory cell includes providing a substrate and providing a first electrode on the substrate. The method additionally... Agent:
20150021541 - Resistive memory having confined filament formation: Resistive memory having confined filament formation is described herein. One or more method embodiments include forming an opening in a stack having a silicon material and an oxide material on the silicon material, and forming an oxide material in the opening adjacent the silicon material, wherein the oxide material formed... Agent:
20150021539 - Resistive memory with small electrode and method for fabricating the same: Systems and methods are disclosed involving a resistive memory with a small electrode, relating to the field of semiconductor resistive memory in ULSI. An illustrative resistive memory may include an Al electrode layer, a SiO2 layer, a Si layer, a resistive material layer and a lower electrode layer in sequence,... Agent:
20150021543 - Programmably reversible resistive device cells using cmos logic processes: Junction diodes fabricated in standard CMOS logic processes can be used as program selectors for reversible resistive devices, such as PCM, RRAM, CBRAM, or other memory cells. The reversible resistive devices have a reversible resistive element coupled to a diode. The diode can be constructed by P+ and N+ active... Agent:
20150021547 - Gan based led epitaxial structure and method for manufacturing the same: A GaN based LED epitaxial structure and a method for manufacturing the same. The GaN based LED epitaxial structure may include: a substrate; and a GaN based LED epitaxial structure grown on the substrate, wherein the substrate is a substrate containing a photoluminescence fluorescent material. The photoelectric efficiency of the... Agent:
20150021545 - Light emitting device and lighting system: The light emitting device includes a first conductive type semiconductor layer (112), an active layer (114) including a quantum well (114w) and a quantum wall (114b) on the first conductive type semiconductor layer (112), an undoped last barrier layer (127) on the active layer (114). An AlxInyGa(1-x-y)N (0≦x≦1, 0≦y≦1)-based layer... Agent: Lg Innotek Co., Ltd.
20150021549 - Light emitting diodes with quantum dot phosphors: A quantum well-based p-i-n light emitting diode is provided that includes nanopillars with an average linear dimension of between 50 nanometers and 1 micron. The nanopillars include a laminar layer of quantum wells capable of non-radiative energy transfer to quantum dot nanocrystals. Quantum dot-Quantum well coupling through the side walls... Agent:
20150021544 - Light-emitting device and manufacturing method thereof: The present invention provides a light-emitting device and a manufacturing method thereof. The light-emitting device includes: a heat dissipation layer (2), a buffer layer (4) formed on the heat dissipation layer (2), and a light emission unit (6) formed on the buffer layer (4). The heat dissipation layer (2) is... Agent: Shenzhen China Star Optoelectronics Technology Co., Ltd.
20150021546 - Semiconductor light emitting device, semiconductor wafer, and method for manufacturing semiconductor light emitting device: According to one embodiment, a semiconductor light emitting device includes a light emitting layer and a first semiconductor layer. The first semiconductor layer is arranged with the light emitting layer in a first direction. The first semiconductor layer includes a first portion and a second portion. The first portion and... Agent: Kabushiki Kaisha Toshiba
20150021548 - Semiconductor nanocrystals, methods for making same, compositions, and products: A semiconductor nanocrystal characterized by having a solid state photoluminescence external quantum efficiency at a temperature of 90° C. or above that is at least 95% of the solid state photoluminescence external quantum efficiency of the semiconductor nanocrystal at 25° C. is disclosed. A semiconductor nanocrystal having a multiple LO... Agent:
20150021550 - Semiconductor structure having nanocrystalline core and nanocrystalline shell pairing with compositional transition layer: Semiconductor structures having a nanocrystalline core and nanocrystalline shell pairing compositional transition layers are described. In an example, a semiconductor structure includes a nanocrystalline core composed of a first semiconductor material. A nanocrystalline shell composed of a second semiconductor material surrounds the nanocrystalline core. A compositional transition layer is disposed... Agent:
20150021551 - Methods for coating semiconductor nanocrystals: A coated quantum dot and methods of making coated quantum dots are provided. Products including quantum dots described herein are also disclosed.... Agent: Qd Vision, Inc.
20150021552 - Iii-nitride transistor including a p-type depleting layer: A transistor includes a III-N layer structure comprising a III-N channel layer between a III-N barrier layer and a p-type III-N layer. The transistor further includes a source, a drain, and a gate between the source and the drain, the gate being over the III-N layer structure. The p-type III-N... Agent:
20150021554 - Direct formation of graphene on semiconductor substrates: The invention generally related to a method for preparing a layer of graphene directly on the surface of a semiconductor substrate. The method includes forming a carbon-containing layer on a front surface of a semiconductor substrate and depositing a metal film on the carbon layer. A thermal cycle degrades the... Agent:
20150021553 - Junctionless accumulation-mode device isolated from semiconductive substrate by reverse-bias junction: A junctionless accumulation-mode (JAM) semiconductive device is isolated from a semiconductive substrate by a reverse-bias band below a prominent feature of a JAM semiconductive body. Processes of making the JAM device include implantation and epitaxy.... Agent: Intel Corporation
20150021556 - Bicarbazole containing compounds: The present disclosure generally relates to novel compounds containing carbazole and triazine with different number of phenyl units attached to its core. In particular, the disclosure relates to compositions and/or devices comprising these compounds as hosts for PHOLEDs.... Agent: Universal Display Corporation
20150021585 - Composition for organic light-emitting diode, organic light-emitting layer including same, and organic light-emitting diode: Provided is a composition for an organic light emitting diode comprising a compound for an organic optoelectric device represented by Chemical Formula S-1; and a compound for an organic optoelectric device represented by Chemical Formula X-1, and an organic emission layer and organic light emitting diode.... Agent:
20150021563 - Compound for organic optoelectronic device, organic light emitting diode including the same and display including the organic light emitting diode: Disclosed are a compound for an organic optoelectronic device, an organic light emitting diode including the same, and a display device including the organic light emitting diode, and the compound is represented by the following Chemical Formula 1.... Agent: Samsung Display Co., Ltd.
20150021586 - Deuterated compounds for electronic applications: This invention relates to deuterated aryl-anthracene compounds that are useful in electronic applications. It also relates to electronic devices in which the active layer includes such a deuterated compound.... Agent:
20150021587 - Deuterated compounds for electronic applications: The objection of invention is to provide a composition for organic electroluminescent element having a smaller amount of foreign substance. The invention is a composition for organic electroluminescent element, which is for forming at least one layer selected from the group consisting of a light emitting layer, a hole injection... Agent: Mitsubishi Chemical Corporation
20150021569 - Display apparatus: A display apparatus and a filter for improving color purity (color saturation filter) are disclosed. In one aspect, the display apparatus includes a substrate, a display device formed on the substrate and having a plurality of pixel areas that emit different colors of light, and a color saturation filter on... Agent: Samsung Display Co., Ltd.
20150021562 - Display panel and method of manufacturing the same: Disclosed is a display panel including: a flexible substrate; a buffer layer disposed on the flexible substrate; a pixel disposed on the buffer layer and comprising a thin film transistor and an image device connected to the thin film transistor; a barrier layer disposed on the flexible substrate to protect... Agent: Samsung Display Co., Ltd.
20150021571 - Display unit, method of manufacturing display unit, and electronic apparatus: A display unit includes: a first substrate including a plurality of light-emission devices in a display region, the plurality of light-emission devices each including an organic layer between a first electrode and a second electrode; a second substrate disposed to face the first substrate with the light-emission devices interposed therebetween;... Agent:
20150021555 - Donor-acceptor compounds with nitrogen containing heteropolyaromatics as the electron acceptor: Luminescent materials including donor-acceptor compounds with a high triplet energy heteropolyaromatic system, namely, dibenzofuran, dibenzothiophene and dibenzoselenophene with one or multiple nitrogens in the ring as the electron acceptor for use as emitters in organic light emitting diodes is disclosed.... Agent:
20150021570 - Flexible display device and method of fabricating the same: A flexible display device includes a display panel including a plastic substrate where an organic light emitting diode and a thin film transistor are formed; a circuit portion applying a power signal and a data signal, which are supplied from an external portion, to the display panel; and a support... Agent:
20150021575 - Indolocarbazole derivative having bipyridine unit and organic electroluminescence device using the same: An indolocarbazole derivative having a bipyridine derivative is represented by formula [Idc]a-[L]b-[E]c where, [Idc] is a indolocarbazole group, represented by Formulae (A1) to (A6), as further defined in the specification, [L] is a single bond or an arylene group having 6 to 30 carbon atoms, and [E] is a bipyridine... Agent:
20150021584 - Integrated touch screen: In one embodiment, an apparatus includes a display stack for a touch-sensitive screen. The display stack comprises a plurality of layers in which a top layer comprises a substantially transparent cover layer. The display stack is configured to display a color image. The apparatus also includes a touch sensor provided... Agent:
20150021588 - Light emitting device and method of manufacturing the same: A high-quality light emitting device is provided which has a long-lasting light emitting element free from the problems of conventional ones because of a structure that allows less degradation, and a method of manufacturing the light emitting device is provided. After a bank is formed, an exposed anode surface is... Agent:
20150021583 - Light-emitting device, display device, and method for manufacturing the same: It is known that a light-emitting element utilizing organic EL deteriorates due to moisture. Therefore, a sealing technique to prevent moisture permeation is important. A light-emitting device including a light-emitting element utilizing organic EL is manufactured over a support substrate having flexibility and a high heat dissipation property (e.g., stainless... Agent:
20150021579 - Light-emitting element: A light-emitting element having extremely high efficiency of approximately 25% is provided. The light-emitting element includes a light-emitting layer which contains a phosphorescent guest, an n-type host, and a p-type host, where the light-emitting layer is interposed between an n-type layer including the n-type host and a p-type layer including... Agent:
20150021576 - Material for an organic electroluminescence device and organic electroluminescence device including the same: A material for an electroluminescence device and an electroluminescence device including the same, the material being represented by following Formula 1:... Agent:
20150021574 - Material for an organic electroluminescence device and organic electroluminescence device using the same: A material for an organic electroluminescence device and an organic electroluminescence device using the same, the material being represented by the following Formula 1:... Agent:
20150021582 - Non-common capping layer on an organic device: A first method comprises providing a plurality of organic light emitting devices (OLEDs) on a first substrate. Each of the OLEDs includes a transmissive top electrode. The plurality of OLEDs includes a first portion of OLEDs and a second portion of OLEDs that is different from the first portion. The... Agent: Universal Display Corporation
20150021577 - Organic compound, light-emitting element, display module, lighting module, light-emitting device, display device, lighting device, and electronic device: A novel organic compound that can be used as a carrier-transport material, a host material, or a light-emitting material in a light-emitting element is provided. Specifically, an organic compound that can give a light-emitting element having favorable characteristics even when the organic compound is used in a light-emitting element emitting... Agent: Semiconductor Energy Laboratory Co., Ltd.
20150021557 - Organic electroluminescent materials and devices: n
20150021590 - Organic electroluminescent materials and devices: Organometallic compounds comprising an imidazole carbene ligand having a N-containing ring fused to the imidazole ring are provided. In particular, the N-containing ring fused to the imidazole ring may contain one nitrogen atom or more than one nitrogen atom. These compounds may demonstrate high photoluminescent (PL) efficiency, Gaussian emission spectra,... Agent: Universal Display Corporation
20150021564 - Organic light emitting diode display: An organic light emitting diode (“OLED”) display includes: a substrate divided into a pixel area, and a peripheral area enclosing the pixel area; an OLED in the pixel area and including a first electrode, an organic emission layer and a second electrode; a common voltage line in the peripheral area... Agent: Samsung Display Co., Ltd.
20150021567 - Organic light emitting diode display: An organic light emitting diode display includes a first substrate, an organic light emitting element, a sealant, and a second substrate. The first substrate includes a first groove disposed in a display area of the organic light emitting diode display and a second groove disposed outside the display area. The... Agent: Samsung Display Co., Ltd.
20150021581 - Organic light emitting diode display and manufacturing method thereof: An organic light emitting diode display and a manufacturing method thereof, and more particularly, an organic light emitting diode display having improved light extraction efficiency by forming both a first electrode and a second electrode as reflective electrodes to guide generated light to the side of a pixel, and a... Agent:
20150021566 - Organic light emitting diode display and method for manufacturing the same: An organic light emitting diode display includes a substrate, a first electrode and an assistance electrode disposed on the substrate and separated from each other, an organic emission layer disposed on the first electrode, a contact hole which exposes the assistance electrode and is defined in the organic emission layer,... Agent: Samsung Display Co., Ltd.
20150021580 - Organic light emitting display: An organic light emitting display is disclosed. In one embodiment, the display includes 1) a substrate, 2) a plurality of pixels formed on the substrate, wherein each of the pixels comprises at least one circuit region including i) a first light emission area, ii) a second light emission area iii)... Agent:
20150021560 - Organic light emitting display apparatus and method for manufacturing the same: An organic light emitting display apparatus includes a plurality of first electrodes disposed in each of a plurality of pixels on a substrate, a plurality of lower auxiliary electrodes insulated from the first electrodes and in which the lower auxiliary electrodes are disposed in a first direction, an organic layer... Agent: Samsung Display Co., Ltd.
20150021568 - Organic light emitting display apparatus and method of manufacturing the same: An organic light-emitting display apparatus including a substrate, a display unit arranged on the substrate, an encapsulation substrate arranged on the display unit, a first filler provided between the substrate and the encapsulation substrate, a second filler provided between the substrate and the encapsulation substrate and separate from the first... Agent: Samsung Display Co., Ltd.
20150021573 - Organic light emitting display device: An organic light emitting display device includes a first substrate, a pixel array, metal patterns, a second substrate, and a frit. The pixel array is disposed on a first substrate. The metal patterns are arranged on the first substrate to surround the pixel array. The second substrate is disposed on... Agent:
20150021558 - Organic light-emitting diode, organic light-emitting display apparatus including the same, and method of manufacturing the organic light-emitting diode: An organic light-emitting diode includes a first electrode, an intermediate layer on the first electrode, and a second electrode on the intermediate layer. The intermediate layer includes an emission layer including an organic material, and a functional layer between the second electrode and the emission layer and including at least... Agent: Samsung Display Co., Ltd.
20150021559 - Organic light-emitting display apparatus and method of manufacturing the same: An organic light-emitting display apparatus includes a display substrate, a display panel on the display substrate and including a pixel region including an organic light-emitting device (OLED), and a non-pixel region, and an encapsulation substrate for encapsulating the display panel, wherein the encapsulation substrate defines at least one groove therein... Agent: Samsung Display Co., Ltd.
20150021589 - Organic light-emitting display device: Embodiments may disclose an organic light-emitting display device including a first substrate including a pixel area emitting light in a first direction, and a transmittance area that is adjacent to the pixel area and transmits external light; a second substrate facing the first substrate and encapsulating a pixel on the... Agent:
20150021565 - Organic light-emtting display apparatus and method of manufacturing same: An organic light-emitting display apparatus including: a substrate; a display unit having a plurality of organic light-emitting devices on the substrate; an encapsulating layer sealing up the display unit; and a protective layer between the display unit and the encapsulating layer, wherein each of the plurality of organic light-emitting devices... Agent: Samsung Display Co., Ltd.
20150021578 - Solid-state imaging device and electronic apparatus: A solid-state imaging device includes: a plurality of laminated photoelectric conversion sections; a reading section configured of a semiconductor region formed inside a semiconductor substrate and reading electric charge that has been subjected to photoelectric conversion in the photoelectric conversion sections; a charge accumulation section accumulating the electric charge read... Agent:
20150021561 - Thin film transistor array substrate and organic light emitting display apparatus including the same: A thin film transistor array substrate includes: a driving thin film transistor including an active layer having a bent shape, where the active layer includes: a first active pattern extending substantially in a first direction; and a second active pattern extending substantially in a second direction perpendicular to the first... Agent: Samsung Display Co., Ltd.
20150021572 - Thin film transistor, method of manufacturing the same, and electronic apparatus: A thin film transistor includes: a gate electrode and a pair of source and drain electrodes; and a semiconductor layer having a channel formed therein, and having a pair of connection sections connected to the pair of source and drain electrodes, respectively, wherein one or both of opposed surfaces of... Agent:
20150021599 - Barrier materials for display devices: Described herein are apparatus comprising one or more silicon-containing layers and a metal oxide layer. Also described herein are methods for forming one or more silicon-containing layers to be used, for example, as passivation layers in a display device. In one particular aspect, the apparatus comprises a transparent metal oxide... Agent: Air Products And Chemicals, Inc.
20150021600 - Display device and electronic device including the same: One embodiment of the present invention provides a highly reliably display device in which a high mobility is achieved in an oxide semiconductor. A first oxide component is formed over a base component. Crystal growth proceeds from a surface toward an inside of the first oxide component by a first... Agent:
20150021592 - Display substrate including a thin film transistor and method of manufacturing the same: A method of manufacturing a display substrate includes forming a gate electrode on a base substrate, forming an active pattern which includes an oxide semiconductor and overlaps with the gate electrode, forming an etch stopper which partially covers the active pattern, and performing a plasma treatment process to promote a... Agent: Samsung Display Co., Ltd.
20150021595 - Electro static discharge protection circuit and electronic device having the same: An electro static discharge (ESD) protection circuit including a signal transmission line coupled to an external input terminal, the ESD protection circuit including: a first power line coupled to a high voltage power supply; a second power line coupled to a low voltage power supply; a plurality of first oxide... Agent:
20150021593 - Oxide semiconductor film, method for forming oxide semiconductor film, and semiconductor device: A crystalline oxide semiconductor film and a semiconductor device including the oxide semiconductor film are provided. One embodiment of the present invention is an oxide semiconductor film including a plurality of flat-plate particles each having a structure in which layers including a gallium atom, a zinc atom, and an oxygen... Agent: Semiconductor Energy Laboratory Co., Ltd.
20150021597 - Photopatternable materials and related electronic devices and methods: The present polymeric materials can be patterned with relatively low photo-exposure energies and are thermally stable, mechanically robust, resist water penetration, and show good adhesion to metal oxides, metals, metal alloys, as well as organic materials. In addition, these polymeric materials can be solution-processed (e.g., by spin-coating), and can exhibit... Agent:
20150021594 - Radiation image-pickup device and radiation image-pickup display system: A radiation image-pickup device includes: a plurality of pixels configured to generate signal charge based on radiation; and a field effect transistor used to read out the signal charge from the plurality of pixels. The transistor includes a first silicon oxide film, a semiconductor layer, and a second silicon oxide... Agent: Sony Corporation
20150021596 - Semiconductor device: A semiconductor device is provided with a first oxide semiconductor film over an insulating surface; a second oxide semiconductor film over the first oxide semiconductor film; a third oxide semiconductor film in contact with a top surface of the insulating surface, a side surface of the first oxide semiconductor film,... Agent: Semiconductor Energy Laboratory Co., Ltd.
20150021601 - Semiconductor device and electronic device: An object is to improve the drive capability of a semiconductor device. The semiconductor device includes a first transistor and a second transistor. A first terminal of the first transistor is electrically connected to a first wiring. A second terminal of the first transistor is electrically connected to a second... Agent:
20150021603 - Semiconductor element, method for manufacturing the semiconductor element, and semiconductor device including the semiconductor element: A structure including an oxide semiconductor layer which is provided over an insulating surface and includes a channel formation region and a pair of low-resistance regions between which the channel formation region is positioned, a gate insulating film covering a top surface and a side surface of the oxide semiconductor... Agent:
20150021598 - Solid-state imaging device and semiconductor display device: A solid-state imaging device increases the SN ratio of a signal even when external light intensity is low. The solid-state imaging device includes a sensor circuit that includes a light-receiving element, a first transistor that controls connection between a first wiring and a node in which the amount of accumulated... Agent:
20150021591 - Thin film transistor and thin film transistor array panel including the same: A thin film transistor is disclosed. In one aspect, the thin film transistor includes a substrate, a semiconductor layer formed on the substrate, and a first gate electrode substantially overlapping the semiconductor layer with a gate insulating layer interposed therebetween. The thin film transistor also includes a second gate electrode... Agent: Samsung Display Co., Ltd.
20150021602 - Thin film transistor display panel and manufacturing method thereof: A thin film transistor array panel and a manufacturing method capable of forming an insulating layer made of different materials for a portion contacting an oxide semiconductor and a second portion without an additional process. Source and drain electrodes of the thin film transistor each include a lower layer and... Agent:
20150021604 - Cmos image sensor having optical block area: A CMOS image sensor includes an active pixel structure suitable for sensing light incident from outside and converting a sensed light into an electrical signal, and an optical block structure suitable for blocking a visible light and passing a UV light to check and evaluate an electrical characteristic of the... Agent: Sk Hynix Inc.
20150021605 - Mapping density and temperature of a chip, in situ: A method and system to map density and temperature of a chip, in situ, is disclosed. The method includes measuring a propagation time that a mechanical propagation wave travels along at least one predefined path in a substrate. The method further includes calculating an average substrate density and temperature along... Agent:
20150021606 - Mram synthetic anitferomagnet structure: An MRAM bit (10) includes a free magnetic region (15), a fixed magnetic region (17) comprising an antiferromagnetic material, and a tunneling barrier (16) comprising a dielectric layer positioned between the free magnetic region (15) and the fixed magnetic region (17). The MRAM bit (10) avoids a pinning layer by... Agent:
20150021607 - Thin film transistor substrate, method of manufacturing the same, and organic light emitting diode display using the same: A thin film transistor substrate includes: a polymer substrate, an oxide transparent electrode layer (TCO) formed on the polymer substrate, a barrier layer formed on the oxide transparent electrode layer, and a semiconductor layer formed on the barrier layer, in which the semiconductor layer is polysilicon. The polysilicon thin film... Agent: Samsung Display Co., Ltd.
20150021608 - Array substrate and method for manufacturing the same: An array substrate having a wiring of a pad region formed without an insulating film or without an insulating film and an organic film to reduce abnormal operations due to an increase in resistance caused by a contact margin at a high temperature, and a method for manufacturing the same... Agent:
20150021609 - Semiconductor apparatus with multiple tiers, and methods: Apparatus and methods are disclosed, including an apparatus that includes a number of tiers of a first semiconductor material, each tier including at least one access line of at least one memory cell and at least one source, channel and/or drain of at least one peripheral transistor, such as one... Agent:
20150021610 - Semiconductor structures with deep trench capacitor and methods of manufacture: An integrated FinFET and deep trench capacitor structure and methods of manufacture are disclosed. The method includes forming at least one deep trench capacitor in a silicon on insulator (SOI) substrate. The method further includes simultaneously forming polysilicon fins from material of the at least one deep trench capacitor and... Agent:
20150021611 - Array substrate and manufacturing method thereof: An array substrate of an LCD includes a substrate, a first wiring layer, a semiconductor film, an insulating layer, a second wiring layer, a passivation layer, a conductive film, and a spacer. The first wiring layer is patterned to a gate line, a gate electrode, and a first laminating layer.... Agent:
20150021612 - Array substrate, display device and manufacturing method of array substrate: An array substrate, a display device and a method of producing the array substrate are provided, and the array substrate includes a substrate and a thin film field effect transistor and a data line formed on the substrate, and the thin film field effect transistor includes a gate electrode, an... Agent:
20150021613 - Photosensor: For a photosensor, an array substrate is provided, wherein the edge of a photodiode is enclosed by the opening edge of a contact hole formed on a drain electrode.... Agent: Mitsubishi Electric Corporation
20150021614 - Controlled on and off time scheme for monolithic cascoded power transistors: A semiconductor device includes a depletion mode GaN FET cascoded with an enhancement mode NMOS transistor. A gate of the GaN FET is electrically coupled to a source of the NMOS transistor through a gate network. The gate network controls at least one of a turn-on time and a turn-off... Agent:
20150021619 - Iii-nitride semiconductor device with reduced electric field between gate and drain: A conductive field plate is formed between the drain electrode and gate of each cell of a III-Nitride semiconductor and is connected to the source electrode to reduce the electric field between the gate and the drain. The electrodes may be supported on N+ III-Nitride pad layers and the gate... Agent:
20150021615 - Junction barrier schottky diode and manufacturing method thereof: The present invention discloses a junction barrier Schottky (JBS) diode and a manufacturing method thereof. The JBS diode includes: an N-type gallium nitride (GaN) substrate; an aluminum gallium nitride (AlGaN) barrier layer, which is formed on the N-type GaN substrate; a P-type gallium nitride (GaN) layer, which is formed on... Agent: Richtek Technology Corporation
20150021620 - Light emitting device: The light emitting device includes a first semiconductor layer, a second semiconductor layer and an active layer provided between the first semiconductor layer and the second semiconductor layer. A first light extraction layer is provided on the first semiconductor layer and includes a nitride semiconductor layer. The first light extraction... Agent: Lg Innotek Co., Ltd.
20150021622 - Light-emitting element and method for manufacturing same: In a light emitting element, a semiconductor layer including a light emitting layer is stacked on a GaN substrate 11, and a surface of the GaN substrate 11 opposite to the stacked semiconductor layer serves as a main light emission surface S. At the main light emission surface S, quadrangular... Agent:
20150021616 - Nitride-based semiconductor devices: A nitride-based semiconductor device includes a barrier structure on a substrate, a nitride semiconductor layer on the barrier structure, and a source electrode, a drain electrode, and a gate electrode on the nitride semiconductor layer to be separated from each other. The barrier structure includes a first semiconductor layer having... Agent: Samsung Electronics Co., Ltd.
20150021621 - Self-aligned gate buried channel field effect transistor: This disclosure provides a transistor device formed on a wide band gap substrate. The transistor device includes a channel layer and a gate structure physically coupled to the channel layer. The gate structure can be formed on the channel layer using an epitaxial process instead of a lithographic process, thereby... Agent:
20150021617 - Semiconductor device: A semiconductor device includes; a semiconductor layer mainly made of GaN; a protective film provided to have electrical insulation property and configured to coat the semiconductor layer; and an electrode provided to have electrical conductivity and configured to form a Schottky junction with the semiconductor layer. Tthe protective film includes:... Agent:
20150021618 - Semiconductor device: A semiconductor device includes: a p-type semiconductor layer mainly made of GaN; an n-type semiconductor layer mainly made of GaN and joined with the p-type semiconductor layer; a protective film arranged to coat the p-type semiconductor layer and the n-type semiconductor layer; a gate insulating film arranged to coat the... Agent:
20150021623 - Enhanced gate dielectric for a field effect device with a trenched gate: The present disclosure relates to a silicon carbide (SiC) field effect device that has a gate assembly formed in a trench. The gate assembly includes a gate dielectric that is an dielectric layer, which is deposited along the inside surface of the trench and a gate dielectric formed over the... Agent:
20150021624 - Lift-off of epitaxial layers from silicon carbide or compound semiconductor substrates: A method to remove epitaxial semiconductor layers from a substrate by growing an epitaxial sacrificial layer on the substrate where the sacrificial layer is a transition metal nitride (TMN) or a TMN ternary compound, growing one or more epitaxial device layers on the sacrificial layer, and separating the device layers... Agent:
20150021625 - Semiconductor fin isolation by a well trapping fin portion: A bulk semiconductor substrate including a first semiconductor material is provided. A well trapping layer including a second semiconductor material and a dopant is formed on a top surface of the bulk semiconductor substrate. The combination of the second semiconductor material and the dopant within the well trapping layer is... Agent:
20150021626 - Light-emitting device: A light-emitting device includes: a layered semiconductor body including an n-type layer, a light-emitting layer, and a p-type layer stacked in sequence; an n-side electrode formed on part of the n-type layer exposed in a via formed in the layered semiconductor body to be non-conductive with the light-emitting layer and... Agent: Panasonic Corporation
20150021627 - Light emitting apparatus, manufacturing method of light emitting apparatus, light receiving and emitting apparatus, and electronic equipment: A light emitting apparatus includes a translucent substrate, and a light emitting section and an optical filter section arranged in a first region of the substrate when viewed in a normal direction of a first surface of the substrate. The light emitting section has a laminate structure that includes, on... Agent:
20150021630 - Display device and manufacturing method thereof: The present invention relates to a display device, and a manufacturing method thereof. The display device includes a first insulation substrate; gate lines and data lines positioned on the first insulating substrate. The gate lines and data lines are insulated from each other and crossed each other. A first passivation... Agent: Samsung Display Co., Ltd.
20150021634 - Display unit using led light sources: A display unit includes a substrate, a plurality of LED light sources arranged in a matrix on the substrate, and a light blocking layer that blocks at least part of light emitted from the LED light sources. The light blocking layer includes an area that overlaps a region between two... Agent:
20150021631 - Flexible display apparatus and method of manufacturing same: A method of manufacturing a flexible display apparatus includes: preparing a support substrate; forming a first graphene oxide layer having a first electrical charge on the support substrate; forming a second graphene oxide layer having a second electrical charge on the first graphene oxide layer; forming a flexible substrate on... Agent: Samsung Display Co., Ltd.
20150021632 - Led with multiple bonding methods on flexible transparent substrate: Inventive aspects disclosed herein include a flexible device. The flexible device includes a flexible transparent substrate and an adhesive adhered to the flexible transparent substrate, covering a portion of the substrate. The device also includes two or more bare LED dies adhered to the adhesive, the two or more LED... Agent: Heilux, LLC
20150021633 - Light-emitting diode package and light-emitting device: An LED package is disclosed, which includes a heat dissipation plate, a composite structure, an LED chip, and an encapsulant. The heat dissipation plate has a chip bonding area, a circuit area, and a first dam disposed at the boundary between the chip bonding area and the circuit area, wherein... Agent: Lextar Electronics Corporation
20150021636 - Optoelectronic semiconductor chip: An optoelectronic semiconductor chip includes a number active regions that are arranged at a distance from each other and a substrate that is arranged on an underside of the active regions. One of the active regions has a main extension direction. The active region has a core region that is... Agent: Osram Opto Semiconductors Gmbh
20150021628 - Solid state lighting devices and fabrication methods including deposited light-affecting elements: Solid state light emitting devices include one or more light affecting elements (e.g., of one or more light-transmissive, light-absorptive, light-reflective, and/or lumiphoric materials) formed on, over, or around at least one solid state light emitter, with the light affecting elements including multiple fused elements embodying plurality of dots, rods, or... Agent:
20150021629 - Using an led die to measure temperature inside silicone that encapsulates an led array: An LAM/ICM assembly comprises an integrated control module (ICM) and an LED array member (LAM). The ICM includes interconnect through which power from outside the assembly is received. In a first novel aspect, active circuitry is embedded in the ICM. In one example, the circuitry monitors LED operation, controls and... Agent: Bridgelux, Inc.
20150021635 - White light emitting led device: A white light emitting LED device comprises: base, blue light LED chips, light reflector and transparent substrate covered with a phosphor coating; two ends of the light reflector connect the base and the transparent substrate, respectively, the inner surface of the light reflector is covered with a light-reflecting coating; blue... Agent:
20150021637 - Display panel and method of manufacturing the same: A display panel includes a plurality of unit pixels, where each of the unit pixels has a hexagonal-shape and includes: a first sub-pixel configured to emit a first color light, where the first sub-pixel has a rhombus-shape; a second sub-pixel configured to emit a second color light, where the second... Agent:
20150021638 - Light emitting device: Disclosed is a light emitting device comprising a plurality of light emitting cells, and a bridge electrode electrically connecting two adjacent light emitting cells, and the plurality of light emitting cells comprise a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active... Agent:
20150021641 - Light emitting device: A light emitting device includes a substrate member, a light emitting element, a resin member, an insulating layer and a fluorescent material layer. The light emitting element is arranged on the substrate member. The resin member surrounds sides of the light emitting element, and has a top portion located higher... Agent:
20150021642 - Light emitting device and method of manufacturing the same: A light emitting device has a substrate including a pair of connection terminals at least on a first main surface of the substrate a light emitting element connected to the connection terminals by a molten material, and a light reflecting member covering the light emitting element, at least one of... Agent:
20150021644 - Light emitting device package and light unit having the same: Disclosed is a light emitting device package. The light emitting device package includes a package body having a first cavity and a second cavity; a plurality of reflective frames comprising a first reflective frame and a second reflective frame on the first cavity and the second cavity, respectively, and each... Agent: Lg Innotek Co., Ltd.
20150021646 - Light emitting device package including a substrate having at least two recessed surfaces: A light emitting device package is disclosed, which includes a first via hole and a second via hole disposed lower than a light emitting part, the first via hole and the second via hole are disposed at an outer area of the light emitting part, a bottom metal includes a... Agent: Lg Innotek Co., Ltd.
20150021639 - Light emitting diode structure: A light emitting diode structure including a substrate, a semiconductor epitaxial layer and a reflective conductive structure layer is provided. The semiconductor epitaxial layer is disposed on the substrate and exposes a portion of the substrate. The reflective conductive structure layer covers a part of the semiconductor epitaxial layer and... Agent: Genesis Photonics Inc.
20150021645 - Light emitting package having a guiding member guiding an optical member: A light emitting package, includes a base; a light emitting device on the base; an electrical circuit layer electrically connected to the light emitting device; an optical member formed of a light transmissive material; and a guiding member guiding the optical member, the guiding member including an opening, a first... Agent: Lg Innotek Co., Ltd.
20150021640 - Light-emitting device: A light-emitting device includes a lead frame, a white resist, a light-emitting element, and a wire. The white resist is provided on the lead frame to be in contact with the lead frame. The white resist has an opening to expose the lead frame. The light-emitting element is disposed on... Agent: Nichia Corporation
20150021647 - Luminous element: A light emitting device according to the embodiment includes a first conductive semiconductor layer; an active layer over the first conductive semiconductor layer; a second conductive semiconductor layer over the active layer; a bonding layer over the second conductive semiconductor layer; a schottky diode layer over the bonding layer; an... Agent:
20150021643 - Surface-modified-metal-oxide-particle material, composition for sealing optical semiconductor element, and optical semiconductor device: There is provided a surface-modified-metal-oxide-particle material including surface-modified-metal-oxide-particles obtained by performing surface modification on metal oxide particles with a surface-modifying material, in which the surface-modifying material includes a predetermined silicone compound, an average primary particle diameter of the metal oxide particles is 3 nm to nm, viscosity at 25° C.... Agent: Sumitomo Osaka Cement Co., Ltd
20150021648 - Composite led package and its application to light tubes: A light emitting diode package includes a first lead frame, a second lead frame and an encapsulant. The first lead frame has a die deposition area on the top thereof for disposing LED die. The second lead frame has a contacting face on the top thereof for wire bonding. The... Agent:
20150021651 - Light emitting device package and light unit having the same: Disclosed is a light emitting device package. The light emitting device package includes a package body having a first cavity and a second cavity; a plurality of reflective frames comprising a first reflective frame and a second reflective frame on the first cavity and the second cavity, respectively, and each... Agent: Lg Innotek Co., Ltd.
20150021649 - Pixel structure: A pixel structure having a first region and a second region adjacent to each other is provided. The pixel structure includes a first pixel electrode and a second pixel electrode. The first pixel electrode forms a plurality of first V-shaped electrode patterns. A tip of the first V-shaped electrode patterns... Agent: Au Optronics Corporation
20150021650 - Substrate, light-emitting device, illuminating light source, and lighting apparatus: A lighting apparatus includes a substrate and a semiconductor light-emitting element mounted on the substrate. The substrate includes a plate-like base member and a copper foil layer formed on part of the base member. The substrate includes a first area and a second area. The first area is an area... Agent:
20150021652 - Nitride semiconductor light-emitting element: The present invention improves luminous efficiency of a nitride semiconductor light-emitting element. In the nitride semiconductor light-emitting element, a non-polar or semi-polar Alx2Iny2Gaz2N layer having a thickness of t1 is interposed between the Alx1Iny1Gaz1N layer included in the p-type nitride semiconductor layer and the active layer (0<x2≦1, 0≦y2<1, 0<z2<1, x2+y2+z2=1).... Agent:
20150021653 - Nitride semiconductor light-emitting element and method for fabricating the same: Provided is a nitride semiconductor light-emitting element having a low contact resistance between an n-type nitride semiconductor layer and an n-side electrode. A portion of the n-type nitride semiconductor layer is removed by a plasma etching process using a gas containing halogen to expose a surface region 102a of the... Agent:
20150021654 - Tunneling transistor with asymmetric gate: An asymmetric gate tunneling transistor includes a substrate, a first-polarity portion, a second-polarity portion, a channel portion, a gate structure and an insulation body. The first-polarity portion and the second-polarity portion are disposed on the substrate. The channel portion is connected with the first-polarity portion and the second-polarity portion, and... Agent: National Tsing Hua University
20150021655 - Semiconductor device: A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type on the first semiconductor region, a third semiconductor region of the first conductivity type on the second semiconductor region, a control electrode disposed within and insulated from the... Agent: Kabushiki Kaisha Toshiba
20150021656 - Semiconductor device: According to one embodiment, a semiconductor device includes a first semiconductor region of a first conductivity type, a first control electrode, a first electrode, a second control electrode, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, and a first insulating... Agent: Kabushiki Kaisha Toshiba
20150021657 - Semiconductor device: According to one embodiment, a semiconductor device includes: first and second electrodes; a first semiconductor region being in ohmic contact with the first electrode; a second semiconductor region being in contact with the first semiconductor region and the first electrode, and the second semiconductor region having a lower impurity concentration... Agent: Kabushiki Kaisha Toshiba
20150021658 - Semiconductor device and method for fabricating the same: A semiconductor device includes an emitter electrode and a first field plate disposed on one surface of a substrate and spaced apart from each other, a collector electrode disposed on the other surface of the substrate, a trench gate disposed in the substrate, a field diffusion junction disposed in the... Agent:
20150021659 - Programmable scr for esd protection: A programmable semiconductor controlled rectifier (SCR) circuit is disclosed. The SCR includes a first terminal (310) and a second terminal (308). A first lightly doped region (304) having a first conductivity type (N−) is formed on a second lightly doped region (314) having a second conductivity type (P−). A first... Agent:
20150021660 - Transistor having a back-barrier layer and method of making the same: A transistor includes a substrate and a buffer layer on the substrate, wherein the buffer layer comprises p-type dopants. The transistor further includes a channel layer on the buffer layer and a back-barrier layer between a first portion of the channel layer and a second portion of the channel layer.... Agent:
20150021661 - Transistor having high breakdown voltage and method of making the same: A transistor includes a substrate and a graded layer on the substrate, wherein the graded layer is doped with p-type dopants. The transistor further includes a superlattice layer (SLS) on the graded layer, wherein the SLS has a p-type dopant concentration equal to or greater than 1×1019 ions/cm3. The transistor... Agent:
20150021663 - Finfet with insulator under channel: A FinFET has a structure including a semiconductor substrate, semiconductor fins and a gate spanning the fins. The fins each have a bottom region coupled to the substrate and a top active region. Between the bottom and top fin regions is a middle stack situated between a vertically elongated source... Agent:
20150021662 - Iii-v semiconductor device having self-aligned contacts: A method including forming a III-V compound semiconductor-containing heterostructure, forming a gate dielectric having a dielectric constant greater than 4.0 positioned within a gate trench, the gate trench formed within the III-V compound semiconductor-containing heterostructure, and forming a gate conductor within the gate trench on top of the gate dielectric,... Agent: International Business Machines Corporation
20150021664 - Lateral/vertical semiconductor device with embedded isolator: A lateral/vertical device is provided. The device includes a device structure including a device channel having a lateral portion and a vertical portion. The lateral portion of the device channel can be located adjacent to a first surface of the device structure, and one or more contacts and/or a gate... Agent: Sensor Electronic Technology, Inc.
20150021667 - High electron mobility transistor and method of forming the same: A semiconductor structure includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer and is different from the first III-V compound layer in composition. A carrier channel is located between the first III-V compound layer and the second III-V compound layer.... Agent:
20150021665 - Transistor having back-barrier layer and method of making the same: A transistor includes a substrate, a channel layer over the substrate, a back-barrier layer over the channel layer, and an active layer over the back-barrier layer. The back-barrier layer has a band gap discontinuity with the channel layer. The band gap of the active layer is less than the band... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20150021666 - Transistor having partially or wholly replaced substrate and method of making the same: A transistor includes a substrate, a channel layer over the substrate, an active structure over the channel layer, a gate electrode over the channel layer, and a drain electrode over the channel layer. The active structure is configured to cause a two dimensional electron gas (2DEG) to be formed in... Agent:
20150021668 - Photosensitive cell of an image sensor: An image sensor cell formed inside and on top of a substrate of a first conductivity type includes: a storage region of the second conductivity type; a read region of the second conductivity type; a transfer region located between the storage region and the read region; and a transfer gate... Agent:
20150021669 - Semiconductor device and manufacturing method thereof: A non-planar JFET device having a thin fin structure is provided. A fin is formed projecting upwardly from or through a top surface of a substrate, where the fin has a first semiconductor layer portion formed from a first semiconductor material of a first conductivity type. The first semiconductor layer... Agent:
20150021670 - Charge compensation semiconductor devices: A field-effect semiconductor device includes a semiconductor body having a first surface and an edge, an active area, and a peripheral area between the active area and the edge, a source metallization on the first surface and a drain metallization. In the active area, first conductivity type drift portions alternate... Agent:
20150021672 - Contact for high-k metal gate device: An integrated circuit having an improved gate contact and a method of making the circuit are provided. In an exemplary embodiment, the method includes receiving a substrate. The substrate includes a gate stack disposed on the substrate and an interlayer dielectric disposed on the gate stack. The interlayer dielectric is... Agent:
20150021671 - Field-effect transistor and method of manufacturing thereof: According to this GaN-based HFET, resistivity ρ of a semi-insulating film forming a gate insulating film is 3.9×109 Ωcm. The value of this resistivity ρ is a value derived when the current density is 6.25×10−4 (A/cm2). By inclusion of the gate insulating film by a semi-insulating film having a resistivity... Agent:
20150021673 - Semiconductor device and manufacturing method thereof: A semiconductor device includes a substrate that has a surface. The semiconductor further includes a fin disposed on the surface and including a semiconductor member. The semiconductor further includes a spacer disposed on the surface, having a type of stress, and overlapping the semiconductor member in a direction parallel to... Agent:
20150021674 - Radiation image pickup unit and radiation image pickup display system: A radiation image pickup unit includes: a plurality of pixels each configured to generate a signal charge based on a radiation; and a field effect transistor to readout the signal charges from the plurality of pixels. The transistor includes a semiconductor layer including an active layer, a first gate electrode... Agent: Sony Corporation
20150021675 - Three-dimensional magnetic memory element: The disclosed technology relates to a magnetic memory device. In one aspect, the device includes a first electrode comprising a conductive pillar formed over the substrate and elongated in a vertical direction crossing a lateral surface of the substrate. The device additionally includes a second electrode extending in a lateral... Agent:
20150021677 - Embedded transistor: An embedded transistor for an electrical device, such as a DRAM memory cell, and a method of manufacture thereof is provided. A trench is formed in a substrate and a gate dielectric and a gate electrode formed in the trench of the substrate. Source/drain regions are formed in the substrate... Agent:
20150021676 - High voltage metal-oxide-metal (hv-mom) device, hv-mom layout and method of making the hv-mom device: A high voltage metal-oxide-metal (HV-MOM) device includes a substrate, a deep well in the substrate and at least one high voltage well in the substrate over the deep well. The HV-MOM device further includes a dielectric layer over each high voltage well of the at least one high voltage well... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20150021678 - Nonvolatile semiconductor memory device and method of manufacturing the same: According to one embodiment, a nonvolatile semiconductor memory device includes a first memory cell on the first fin-type active area, and a second memory cell on the second fin-type active area. Each of widths of charge storage layers of the first and second memory cells becomes narrower upward from below.... Agent: Kabushiki Kaisha Toshiba
20150021679 - Architecture to improve cell size for compact array of split gate flash cell with buried common source structure: Some embodiments of the present disclosure relates to an architecture to create split gate flash memory cell that has lower common source (CS) resistance and a reduced cell size by utilizing a buried conductive common source structure. A two-step etch process is carried out to create a recessed path between... Agent:
20150021680 - Field effect transistor incorporating a schottky diode: A FET incorporating a Schottky diode has a structure allowing the ratio of an area in which the Schottky diode is formed and an area in which the FET is formed to be freely adjusted. A trench extending for a long distance is utilized. Schottky electrodes are interposed at positions... Agent:
20150021683 - Methods of forming semiconductor device with self-aligned contact elements and the resulting devices: One method disclosed herein includes forming a sacrificial etch stop material in a recess above a replacement gate structure, with the sacrificial etch stop material in position, forming a self-aligned contact that is conductively coupled to the source/drain region, after forming the self-aligned contact, performing at least one process operation... Agent: Globalfoundries Inc.
20150021682 - Normally on high voltage switch: In some embodiments, a normally on high voltage switch device (“normally on switch device”) incorporates a trench gate terminal and buried doped gate region. In other embodiments, a surface gate controlled normally on high voltage switch device is formed with trench structures and incorporates a surface channel controlled by a... Agent: Alpha And Omega Semiconductor Incorporated
20150021685 - Semiconductor device and manufacturing method of the same: According to one embodiment, a semiconductor device includes a semiconductor layer; a plurality of semiconductor regions; second semiconductor region; a first electrode being positioned between the plurality of first semiconductor regions, the first electrode contacting with the semiconductor layer, each of the plurality of first semiconductor regions, and the second... Agent:
20150021684 - Semiconductor device having buried channel array and method of manufacturing the same: A semiconductor device and a method of fabricating a semiconductor device, the device including an active region on a substrate, the active region being defined by a field region; gate trenches in the active region of the substrate; gate structures respectively formed in the gate trenches; and at least one... Agent: Samsung Electronics Co., Ltd.
20150021681 - Semiconductor device having metal gate and manufacturing method thereof: A manufacturing method of a semiconductor device having metal gate includes providing a substrate having a first semiconductor device formed thereon, and the first semiconductor device includes a first dummy gate. Next, the dummy gate is removed to form a first gate trench in the first semiconductor device, and the... Agent:
20150021686 - Device structure and methods of forming superjunction lateral power mosfet with surrounding ldd: A semiconductor device has a substrate and a gate formed over the substrate. An LDD region is formed in the substrate adjacent to the gate. A superjunction is formed in the LDD region while a portion of the LDD region remains between the superjunction and gate. A mask is formed... Agent:
20150021687 - Semiconductor structure and method of forming the semiconductor structure with deep trench isolation structures: The density of a transistor array is increased by forming one or more deep trench isolation structures in a semiconductor material. The deep trench isolation structures laterally surround the transistors in the array. The deep trench isolation structures limit the lateral diffusion of dopants and the lateral movement of charge... Agent:
20150021688 - Mos devices with non-uniform p-type impurity profile: An integrated circuit structure include a semiconductor substrate, a gate stack over the semiconductor substrate, and an opening extending into the semiconductor substrate, wherein the opening is adjacent to the gate stack. A silicon germanium region is disposed in the opening, wherein the silicon germanium region has a first p-type... Agent:
20150021689 - Asymmetrical replacement metal gate field effect transistor: An asymmetrical field effect transistor (FET) device includes a semiconductor substrate, a buried oxide layer disposed on the semiconductor substrate, an extended source region disposed on the buried oxide layer and a drain region disposed on the buried oxide layer. The asymmetrical FET device also includes a silicon on insulator... Agent: International Business Machines Corporation
20150021690 - Fin transformation process and isolation structures facilitating different fin isolation schemes: Methods and semiconductor structures formed from the methods are provided which facilitate fabricating semiconductor fin structures. The methods include, for example: providing a wafer with at least one semiconductor fin extending above a substrate; transforming a portion of the semiconductor fin(s) into an isolation layer, the isolation layer separating a... Agent:
20150021691 - Finfet with electrically isolated active region on bulk semiconductor substrate and method of fabricating same: A semiconductor stack of a FinFET in fabrication includes a bulk silicon substrate, a selectively oxidizable sacrificial layer over the bulk substrate and an active silicon layer over the sacrificial layer. Fins are etched out of the stack of active layer, sacrificial layer and bulk silicon. A conformal oxide deposition... Agent:
20150021692 - Method of localized modification of the stresses in a substrate of the soi type, in particular fd soi type, and corresponding device: A substrate of the silicon on insulator type includes a semi-conducting film disposed on a buried insulating layer which is disposed on an unstressed silicon support substrate. The semi-conducting film includes a first film zone of tensile-stressed silicon and a second film zone of tensile-relaxed silicon. Openings through the buried... Agent: Stmicroelectronics (crolles 2) Sas
20150021693 - Enhancing transistor performance and reliability by incorporating deuterium into a strained capping layer: When forming transistors with deuterium enhanced gate dielectrics and strained channel regions, the manufacturing processes of strain-inducing dielectric material layers formed above the transistors may be employed to efficiently introduce and diffuse the deuterium to the gate dielectrics. The incorporation of deuterium into the strain-inducing dielectric material layers may be... Agent:
20150021695 - Epitaxial block layer for a fin field effect transistor device: Approaches for enabling uniform epitaxial (epi) growth in an epi junction area of a semiconductor device (e.g., a fin field effect transistor device) are provided. Specifically, a semiconductor device is provided including a dummy gate and a set of fin field effect transistors (FinFETs) formed over a substrate; a spacer... Agent:
20150021699 - Fin field effect transistors having multiple threshold voltages: A high dielectric constant (high-k) gate dielectric layer is formed on semiconductor fins including one or more semiconductor materials. A patterned diffusion barrier metallic nitride layer is formed to overlie at least one channel, while not overlying at least another channel. A threshold voltage adjustment oxide layer is formed on... Agent:
20150021694 - Integrated circuits having replacement metal gates with improved threshold voltage performance and methods for fabricating the same: Integrated circuits having replacement metal gates with improved threshold voltage performance and methods for fabricating such integrated circuits are provided. A method includes providing a dielectric layer overlying a semiconductor substrate. The dielectric layer has a first and a second trench. A gate dielectric layer is formed in the first... Agent:
20150021698 - Intrinsic channel planar field effect transistors having multiple threshold voltages: Intrinsic channels one or more intrinsic semiconductor materials are provided in a semiconductor substrate. A high dielectric constant (high-k) gate dielectric layer is formed on the intrinsic channels. A patterned diffusion barrier metallic nitride layer is formed. A threshold voltage adjustment oxide layer is formed on the physically exposed portions... Agent:
20150021701 - Memory cell array: A semiconductor memory cell array is disclosed that includes a memory cell unit. The memory cell unit includes an active region, a first transistor, a second transistor, a gate structure, and an interconnect. The first transistor and the second transistor are formed on the active region. The gate structure is... Agent:
20150021696 - Mos devices having epitaxy regions with reduced facets: An integrated circuit structure includes a gate stack over a semiconductor substrate, and an opening extending into the semiconductor substrate, wherein the opening is adjacent to the gate stack. A first silicon germanium region is disposed in the opening, wherein the first silicon germanium region has a first germanium percentage.... Agent:
20150021702 - Shallow trench isolation: A semiconductor structure with an improved shallow trench isolation (STI) region and method of fabrication is disclosed. The STI region comprises a lower portion filled with oxide and an upper portion comprising a high Young's modulus (HYM) liner disposed on the lower portion and trench sidewalls and filled with oxide.... Agent: Globalfoundries Inc.
20150021700 - Shallow trench isolation structure and method of forming the same: A semiconductor structure includes a shallow trench isolation (STI) structure. The semiconductor structure includes a substrate having a first surface. A STI structure extends from the first surface into the substrate. The STI structure includes a first portion and a second portion. The first portion extends from the first surface... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20150021697 - Thermally tuning strain in semiconductor devices: A method includes performing a first epitaxy to grow a silicon germanium layer over a semiconductor substrate, performing a second epitaxy to grow a silicon layer over the silicon germanium layer, and performing a first oxidation to oxidize the silicon germanium layer, wherein first silicon germanium oxide regions are generated.... Agent:
20150021704 - Finfet work function metal formation: An improved method and structure for fabrication of replacement metal gate (RMG) field effect transistors is disclosed. P-type field effect transistor (PFET) gate cavities are protected while N work function metals are deposited in N-type field effect transistor (NFET) gate cavities.... Agent: Globalfoundries Inc.
20150021703 - Gate oxide quality for complex mosfet devices: In various aspects, methods of forming a semiconductor device and semiconductor devices are provided. In some illustrative embodiments herein, a silicon/germanium layer is provided on a semiconductor substrate. On the silicon/germanium layer, at least one insulating material layer is formed. After having performed a thermal annealing process, the at least... Agent:
20150021705 - Method of fabricating dual high-k metal gates for mos devices: The present disclosure provides a method of fabricating a semiconductor device. The method includes providing a semiconductor substrate having a first region and a second region, forming a high-k dielectric layer over the semiconductor substrate, forming a capping layer over the high-k dielectric layer in the first region, forming a... Agent:
20150021706 - Integrated circuit and method of forming the integrated circuit with improved logic transistor performance and sram transistor yield: In an integrated circuit that includes an NMOS logic transistor, an NMOS SRAM transistor, and a resistor, the gate of the SRAM transistor is doped at the same time that the resistor is doped, thereby allowing the gate of the logic transistor to be separately doped without requiring any additional... Agent:
20150021707 - Electromagnetic shield and associated methods: Semiconductor devices are described, along with methods and systems that include them. One such device includes a diffusion region in a semiconductor material, a terminal coupled to the diffusion region, and a field plate coupled to the terminal and extending from the terminal over the diffusion region to shield the... Agent:
20150021708 - Pixel structure: A pixel structure includes a substrate, a scan line on the substrate, a data line set, an active device, and a pixel electrode. The substrate has a display region and a peripheral region around the display region. The display region includes at least one sub-pixel region. The data line set... Agent:
20150021710 - Methods for forming sti regions in integrated circuits: A first Fin Field-Effect Transistor (FinFET) and a second FinFET are adjacent to each other. Each of the first FinFET and the second FinFET includes a semiconductor fin, a gate dielectric on sidewalls and a top surface of the semiconductor fin, and a gate electrode over the gate dielectric. The... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20150021711 - Semiconductor device: A p diffusion region is selectively provided in a surface layer of an n− diffusion region which is provided in the front surface of a p-type bulk substrate. A power supply potential is applied to the n− diffusion region. A PMOS of a high-side driving circuit and a clamping PMOS... Agent:
20150021709 - Structures and methods integrating different fin device architectures: Semiconductor structures and fabrication methods are provided integrating different fin device architectures on a common wafer, for instance, within a common functional device area of the wafer. The method includes: facilitating fabricating multiple fin device architectures within a common functional device wafer area by: providing a wafer with at least... Agent:
20150021712 - Highly conformal extension doping in advanced multi-gate devices: The present disclosure provides in various aspects methods of forming a semiconductor device, methods for forming a semiconductor device structure, a semiconductor device and a semiconductor device structure. In some illustrative embodiments herein, a gate structure is formed over a non-planar surface portion of a semiconductor material provided on a... Agent: Globalfoundries Inc.
20150021713 - Guard ring structure of semiconductor arrangement: Among other things, one or more semiconductor arrangements and techniques for forming such semiconductor arrangements are provided. A semiconductor arrangement comprises a first guard ring surrounding at least a portion of a device, and a first poly layer formed over the first guard ring.... Agent:
20150021714 - Integrated circuits having a metal gate structure and methods for fabricating the same: Integrated circuits and methods for fabricating integrated circuits are provided. In an exemplary embodiment, a method for fabricating an integrated circuit includes forming an interfacial layer material over a semiconductor substrate and forming a gate insulation layer over the interfacial layer material that includes a combination of a layer of... Agent: Globalfoundries, Inc.
20150021715 - Low temperature salicide for replacement gate nanowires: Techniques for integrating low temperature salicide formation in a replacement gate device process flow are provided. In one aspect, a method of fabricating a FET device is provided that includes the following steps. A dummy gate(s) is formed over an active area of a wafer. A gap filler material is... Agent: International Business Machines Corporation
20150021716 - Low power micro semiconductor gas sensor and method of manufacturing the same: Provided are a low power micro semiconductor gas sensor and a method of manufacturing the same. The micro semiconductor gas sensor includes a substrate having an air gap, a peripheral portion provided on the substrate and comprising electrode pads, a sensor portion comprising sensing electrodes connected from the electrode pads... Agent: Electronics And Telecommunications Research Institute
20150021718 - Apparatus and method for reduced strain on mems devices: A method and apparatus for coupling a MEMS device to a substrate is disclosed. The method includes providing a substrate with a conductor disposed over the substrate, adhering the MEMS device to the substrate, wherein a first elastomer adheres the MEMS device to the substrate. The MEMS device is electrically... Agent: Invensense, Inc.
20150021720 - Device comprising a fluid channel fitted with at least one microelectronic or nanoelectronic system, and method for manufacturing such a device: A device comprising a substrate comprising at least one microelectronic and/or nanoelectronic structure comprising at least one sensitive portion and one fluid channel (2) defined between said substrate and a cap (6), where said fluid channel (2) comprises at least two apertures to provide a flow in said channel, where... Agent: Commissariat A L'energie Atomique Et Aux Ene Alt
20150021719 - Functional device, electronic apparatus, and moving object: A functional device includes a movable body displaceable along a first axis, a fixed section configured to support the movable body in a coupling section, a movable electrode section extending from the movable body, a fixed electrode section arranged to be opposed to the movable electrode section, and an extending... Agent:
20150021717 - Reducing microelectromechanical systems stiction by formation of a silicon carbide layer: A mechanism is provided for reducing stiction in a MEMS device by forming a near-uniform silicon carbide layer on silicon surfaces using carbon from TEOS-based silicon oxide sacrificial films used during fabrication. By using the TEOS as a source of carbon to form an antistiction coating, all silicon surfaces can... Agent:
20150021721 - Integrated circuit package and method: A method of forming a packaged electronic device includes fabricating a MEMS structure, such as a BAW structure, on a first semiconductor wafer substrate; forming a cavity in a second semiconductor wafer substrate; and mounting the second substrate on the first substrate such that the MEMS structure is positioned inside... Agent: Texas Instruments Incorporated
20150021722 - Mems device: A MEMS device includes a membrane comprising a first plurality of fingers. A counter electrode arrangement includes a second plurality of fingers disposed in a interdigitated relationship with the first plurality of fingers of the membrane. A deflector is configured to deflect the membrane such that the first and second... Agent:
20150021723 - Mechanisms for forming micro-electro mechanical system device: Embodiments of mechanisms for forming a micro-electro mechanical system (MEMS) device are provided. The MEMS device includes a substrate and a MEMS structure over the substrate, and the MEMS structure has a movable element. The movable element is surrounded by a cavity. The MEMS device also includes a fuse layer... Agent:
20150021725 - Magnetoresistive random access memory structure and method of forming the same: A magnetoresistive random access memory (MRAM) structure includes a bottom electrode structure. A magnetic tunnel junction (MTJ) element is over the bottom electrode structure. The MTJ element includes an anti-ferromagnetic material layer. A ferromagnetic pinned layer is over the anti-ferromagnetic material layer. A tunneling layer is over the ferromagnetic pinned... Agent:
20150021726 - Method for patterning a magnetic tunnel junction stack: The disclosed technology generally relates to methods of fabricating magnetic memory devices, and more particularly to methods of forming a magnetic tunnel junction (MTJ) stack. In one aspect, a method of forming the MTJ includes providing an MTJ material stack comprising a ferromagnetic material and forming thereon a protective mask... Agent:
20150021724 - Self contacting bit line to mram cell: Embodiments of the invention disclose magnetic memory cell configurations in which a magnetic storage structure is coupled to an upper metal layer with minimal overlay margin. This greatly reduces a size of the memory cell.... Agent: Magsil Corporation
20150021727 - Application specific integrated circuit with integrated magnetic sensor: A method and system for a device with a magnetic sensor element and magnetic storage elements is disclosed. The device includes an integrated circuit substrate. At least a magnetic sensor with a magnetic sensor element with a permanent magnet is disposed over the integrated circuit substrate. A plurality of magnetic... Agent:
20150021730 - Camera module: A camera module includes an image sensor, a packaging substrate, a lens holder, and a lens unit. The image sensor is positioned on a surface of the packaging substrate. The lens holder includes a base portion and a holding portion connected to the base portion. The base portion includes a... Agent:
20150021728 - Dielectric structure for color filter array: An integrated circuit device in which an array of photodiodes are formed at the surface of a semiconductor substrate. A dielectric structure comprising multiple layers of dielectric is formed over the photodiodes. An array of color filters is formed over the photodiodes and within the dielectric structure. An interface between... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.
20150021729 - Solid state imaging apparatus and method of producing the same: There is provided a solid state imaging apparatus, including: an optical film layer on which a solid state image sensor is mounted; a multifunctional chip laminated at a periphery of the solid state image sensor in the optical film layer being electrically contacted with the optical film layer via a... Agent:
20150021731 - Solid-state imaging device and manufacturing method thereof: The solid-state imaging device according to the present invention includes a semiconductor substrate including an imaging region and a peripheral circuit region, a wiring layer formed on the semiconductor substrate, a plurality of pixel electrodes arranged in a matrix on the wiring layer above the imaging region, a photoelectric conversion... Agent:
20150021732 - Semiconductor device: A semiconductor device includes: a first well provided in a semiconductor substrate; a second well provided in the semiconductor substrate, so as to be isolated from the first well; a Schottky barrier diode formed in the first well; and a PN junction diode formed in the second well, with an... Agent:
20150021733 - Semiconductor wafer, semiconductor ic chip and manufacturing method of the same: A semiconductor wafer includes circuit integration regions each incorporating an integrated circuit and guard rings disposed to surround the circuit integration regions, respectively. A scribe region disposed between every adjacent two of the guard rings. An element and a pad electrically connected to the element are disposed in the scribe... Agent:
20150021734 - Semiconductor device, a micro-electro-mechanical resonator and a method for manufacturing a semiconductor device: A semiconductor device includes a silicon substrate layer with a decoupling region. The decoupling region of the silicon substrate layer comprises an array of lamellas laterally spaced apart from each other by cavities. Each lamella of the array of lamellas comprises at least 20% silicon dioxide.... Agent:
20150021735 - Semiconductor device and method of manufacturing the same: The invention provides a semiconductor device and a method of manufacturing the same. The inventive method includes: 1) forming a pad oxide layer on a substrate; 2) forming on the pad oxide layer a barrier layer with an isolation region pattern exposing the surface of the pad oxide layer; 3)... Agent: Peking University Founder Group Co., Ltd.
20150021736 - Electronic fuse line with modified cap: An electronic fuse structure having an Mx level including an Mx dielectric, a fuse line, an Mx cap dielectric above at least a portion of the Mx dielectric, and a modified portion of the Mx cap dielectric directly above at least a portion of the fuse line, where the modified... Agent:
20150021737 - Metal-insulator-metal (mim) capacitor with deep trench (dt) structure and method in a silicon-on-insulator (soi): A structure forming a metal-insulator-metal (MIM) trench capacitor is disclosed. The structure comprises a multi-layer substrate having a metal layer and at least one dielectric layer. A trench is etched into the substrate, passing through the metal layer. The trench is lined with a metal material that is in contact... Agent:
20150021738 - Bipolar junction transistors with an air gap in the shallow trench isolation: Device structures, fabrication methods, and design structures for a bipolar junction transistor. A trench isolation region is formed in a substrate. The trench isolation region is coextensive with a collector in the substrate. A base layer is formed on the collector and on a first portion of the trench isolation... Agent: International Business Machines Corporation
20150021739 - Protection device and related fabrication methods: Protection device structures and related fabrication methods are provided. An exemplary semiconductor protection device includes a base region of semiconductor material having a first conductivity type, an emitter region within the base region having the opposite conductivity type, and a collector region of semiconductor material having the second conductivity type,... Agent:
20150021740 - Integration of the silicon impatt diode in an analog technology: A method to integrate a vertical IMPATT diode in a planar process.... Agent:
20150021741 - Bonded semiconductor structures: A method is disclosed that includes the steps outlined below. An epitaxial layer is formed on a first semiconductor substrate. At least one implant species is implanted between the epitaxial layer and the first semiconductor substrate to form an ion-implanted layer. The epitaxial layer is bonded to a bonding oxide... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.
20150021742 - Methods of forming junction termination extension edge terminations for high power semiconductor devices and related semiconductor devices: Methods of forming a power semiconductor device having an edge termination are provided in which the power semiconductor device that has a drift region of a first conductivity type is formed on a substrate. A junction termination extension is formed on the substrate adjacent the power semiconductor device, the junction... Agent:
20150021744 - Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same: A method for patterning a layer increases the density of features formed over an initial patterning layer using a series of self-aligned spacers. A layer to be etched is provided, then an initial sacrificial patterning layer, for example formed using optical lithography, is formed over the layer to be etched.... Agent:
20150021743 - Uniform roughness on backside of a wafer: Substrates (wafers) with uniform backside roughness and methods of manufacture are disclosed. The method includes forming a material on a backside of a wafer. The method further includes patterning the material to expose portions of the backside of the wafer. The method further includes roughening the backside of the wafer... Agent:
20150021745 - Reactive ion etching: A method of reactive ion etching a substrate 46 to form at least a first and a second etched feature (42, 44) is disclosed. The first etched feature (42) has a greater aspect ratio (depth:width) than the second etched feature (44). In a first etching stage the substrate (46) is... Agent: Atlantic Lnertial Systems Limited
20150021746 - Backscattering for localized annealing: A method of fabricating an electronic apparatus includes forming an active layer over a wafer, forming a backscatter layer over the wafer, and directing radiation toward the wafer to anneal the active layer. The backscatter layer is not transparent to the radiation, more reflective than absorptive of the radiation, and... Agent: Freescale Semiconductor, Inc.
20150021747 - Diode: A p-type anode layer (2) provided on an n-type drift layer (1) in the active region. A p-type diffusion layer (3) is provided on the n-type drift layer (1) in a termination region outside the active region. An oxide film (4) covers an outer periphery of the p-type anode layer... Agent: Mitsubishi Electric Corporation
20150021748 - Semiconductor device: A semiconductor device of an embodiment includes: a substrate, a high-frequency integrated circuit being provided on the substrate, a cap, and a sealing wall provided between the substrate and the cap. The cap includes a first conductive layer, a second conductive layer, an insulating layer provided between the first conductive... Agent: Kabushiki Kaisha Toshiba
20150021749 - Semiconductor device and manufacturing method thereof: A semiconductor device is provided which complies with restrictions on layout on a mounting substrate side. The semiconductor device includes a wiring substrate having a plurality of bonding leads at an upper surface having a rectangular shape, a semiconductor chip mounted over the upper surface of the wiring substrate, and... Agent:
20150021750 - Semiconductor device and method for manufacturing the same: The present invention has a tray corresponding to a heat sink, a circuit part is accommodated in an accommodating part of the tray, and the circuit part is potting-sealed with a sealing resin such that external electrodes are exposed. The sealing resin covers and seals a top part of the... Agent: Mitsubishi Electric Corporation
20150021753 - Packaging structure of a semiconductor device: A method of making a semiconductor packaged device comprises mounting onto a lead frame a bottom of a molded semiconductor chip having a first plastic package body covering a top face of a semiconductor chip, encapsulating the lead frame and the semiconductor chip with a second plastic package body with... Agent:
20150021752 - Semiconductor device: There is provided a semiconductor device having excellent moisture resistance and high temperature storage properties. The semiconductor device includes a lead frame that has a die pad and an inner lead, as a substrate, a semiconductor element that is mounted on the die pad, an electrode pad that is provided... Agent:
20150021751 - Semiconductor device with plated pillars and leads: A semiconductor device with plated pillars and leads is disclosed and may include a semiconductor die comprising a conductive pillar, a conductive lead electrically coupled to the conductive pillar, a metal plating layer covering the conductive lead and conductive pillar, and an encapsulant material encapsulating the semiconductor die and at... Agent: Amkor Technology, Inc.
20150021754 - Semiconductor device and method of forming thermal lid for balancing warpage and thermal management: A semiconductor device has a first semiconductor die and an encapsulant deposited over the first semiconductor die. An interconnect structure is formed over the first semiconductor die and encapsulant. A thermal interface material is formed over the first semiconductor die and encapsulant. A stiffening layer is formed over the first... Agent: Stats Chippac, Ltd.
20150021756 - Semiconductor device: A semiconductor device includes an insulating substrate, semiconductor elements and a cooling device. The cooling device includes a heat radiation substrate, fins, and a cooling case of a box-like shape that accommodates the fins and has a bottom wall and side walls. An introducing port and a discharge port for... Agent: Fuji Electric Co., Ltd.
20150021755 - Stacked package and method of manufacturing the same: A stacked package includes a substrate, and a first structure bonded to the substrate. The first structure has a plurality of bumps, and a first hydrophilic coating is on sidewalls of the first structure. The stacked package further includes a second structure bonded to the plurality of bumps. The first... Agent:
20150021757 - Systems and methods for reducing contact resistivity of semiconductor devices: Systems and methods are provided for reducing a contact resistivity associated with a semiconductor device structure. A substrate including a semiconductor region is provided. One or more dielectric layers are formed on the semiconductor region, the one or more dielectric layers including an element. A gaseous material is applied on... Agent:
20150021763 - Epoxy resin composition and semiconductor apparatus prepared using the same: An epoxy resin composition includes an inorganic filler, an epoxy resin, and a curing agent. The inorganic filler has an average particle diameter D50 from about 2 μm to about 10 μm, an average particle diameter D10 of about 3 μm or less, and an average particle diameter D90 from... Agent:
20150021760 - Mechanisms for forming bonding structures: Embodiments of mechanisms for forming a package are provided. The package includes a substrate and a contact pad formed on the substrate. The package also includes a conductive pillar bonded to the contact pad through solder formed between the conductive pillar and the contact pad. The solder is in direct... Agent:
20150021758 - Mechanisms for forming bump structures over wide metal pad: Embodiments of mechanisms for forming a semiconductor die are provided. The semiconductor die includes a semiconductor substrate and a protection layer formed over the semiconductor substrate. The semiconductor die also includes a conductive layer conformally formed over the protection layer, and a recess is formed in the conductive layer. The... Agent:
20150021759 - Mechanisms for forming package structure: The method also includes providing a substrate having a first contact pad and a second contact pad formed on the substrate. The method further includes forming a first solder paste structure and a second solder paste structure over the first contact pad and the second contact pad, respectively. The second... Agent:
20150021761 - Multi-chip package: A multi-chip package may include a package substrate, a plurality of semiconductor chips stacked stepwise on the package substrate, a logic chip and a first conductive wire. The logic chip may include a conductive bump electrically connected to the package substrate. The first conductive wire may be electrically connected between... Agent:
20150021765 - Semiconductor device: Disclosed is a semiconductor device suppressed in decrease of reliability. The semiconductor device comprises an electrode pad portion (2) formed on the upper surface of a semiconductor substrate (1), a passivation layer (3) so formed on the upper surface of the semiconductor substrate (1) as to overlap a part of... Agent:
20150021764 - Semiconductor device with redistribution layers on partial encapsulation and non-photosensitive passivation layers: A semiconductor device with redistribution layers on partial encapsulation is disclosed and may include providing a carrier with a non-photosensitive protection layer, forming a pattern in the non-photosensitive protection layer, providing a semiconductor die with a contact pad on a first surface, and bonding the semiconductor die to the non-photosensitive... Agent:
20150021762 - Semiconductor substrate having stress-absorbing surface layer: An assembly (101) comprising a semiconductor device (110) with solderable bumps (112); a substrate (120) with a layer (130) of a first insulating compound and an underlying metal layer (140) patterned in contact pads (141) and connecting traces (142), the insulating layer having openings (132) to expose the surface (142a)... Agent:
20150021766 - Substrate for semiconductor package and process for manufacturing: A semiconductor package substrate includes a core portion, an upper circuit layer and a plurality of pillars. The pillars are disposed on and project upward from the upper circuit layer. Top surfaces of the pillars are substantially coplanar. The pillars provide an electrical interconnect to a semiconductor die. Solder joint... Agent:
20150021769 - Packaged microelectronic devices and methods for manufacturing packaged microelectronic devices: Packaged microelectronic devices and methods for manufacturing packaged microelectronic devices are disclosed. In one embodiment, a method for forming a microelectronic device includes attaching a microelectronic die to a support member by forming an attachment feature on at least one of a back side of the microelectronic die and the... Agent:
20150021768 - Semiconductor device and power supply unit utilizing the same: A semiconductor device has pluralities of grid array terminals forming a grid array structure, e.g. a BGA structure, in which the output end of a built-in switch circuit is connected to multiple terminals of the grid array structure, thereby reducing the current that flows through each of the multiple terminals... Agent:
20150021767 - Semiconductor device with plated conductive pillar coupling: A semiconductor device with plated conductive pillar coupling is disclosed and may include a semiconductor die comprising a conductive pillar formed on a bond pad on the die, a substrate comprising an insulating layer with conductive patterns formed on a first surface of the substrate and a second surface opposite... Agent:
20150021770 - Back-end-of-line (beol) interconnect structure: A method of fabricating an interconnect structure on a wafer and an interconnect structure are provided. A dielectric layer is provided on the wafer, with the dielectric layer having a recess therein. A silicon (Si) layer is deposited in the recess. An interconnect is formed by providing a barrier layer... Agent:
20150021771 - Mechanisms for forming three-dimensional integrated circuit (3dic) stacking structure: Embodiments of mechanisms of forming a semiconductor device are provided. The semiconductor device includes a first semiconductor wafer comprising a first transistor formed in a front-side of the first semiconductor wafer. The semiconductor device also includes a second semiconductor wafer comprising a second transistor formed in a front-side of the... Agent:
20150021775 - Method for manufacturing semiconductor device, semiconductor device, and apparatus for producing semiconductor: A method for manufacturing a semiconductor device for forming a metal element-containing layer on an insulating layer in which a concave portion is formed, includes: forming an oxide layer including mainly an oxide of the metal element on the insulating layer including the concave portion; and forming a silicate layer... Agent:
20150021772 - Mixed-metal barrier films optimized by high-productivity combinatorial pvd: A barrier film including at least one ferromagnetic metal (e.g., nickel) and at least one refractory metal (e.g., tantalum) effectively blocks copper diffusion and facilitates uniform contiguous (non-agglomerating) deposition of copper layers less than 100 Å thick. Methods of forming the metal barrier include co-sputtering the component metals from separate... Agent:
20150021774 - Molecular self-assembly in substrate processing: Methods for sealing a porous dielectric are presented including: receiving a substrate, the substrate including the porous dielectric; exposing the substrate to an organosilane, where the organosilane includes a hydrolysable group for facilitating attachment with the porous dielectric, and where the organosilane does not include an alkyl group; and forming... Agent:
20150021773 - Through semiconductor via structure with reduced stress proximity effect: An integrated circuit device and associated fabrication process are disclosed for forming a through semiconductor via (TSV) conductor structure in a semiconductor substrate with active circuitry formed on a first substrate surface where the TSV conductor structure includes multiple small diameter conductive vias extending through the first substrate surface and... Agent: Conversant Intellectual Property Management Inc.
20150021776 - Polysilicon layer: A polysilicon layer including an amorphous polysilicon layer and a crystallized polysilicon layer is provided. The crystallized polysilicon layer is disposed on the amorphous polysilicon layer. Besides, the amorphous polysilicon layer has a first grain size, the crystallized polysilicon layer has a second grain size, and the first grain size... Agent:
20150021778 - Chip package incorporating interfacial adhesion through conductor sputtering: This disclosure relates generally to an electronic device and method having can include a method of making a chip package. An insulator layer comprising an insulator material, the insulator layer positioned with respect to a first conductive line, forming a second conductive line with respect to the insulator layer, wherein... Agent:
20150021777 - Mounting structure and mounting structure manufacturing method: A mounting structure which reduces the mechanical stress added to a low-κ material due to warping caused by the difference in thermal expansion coefficients between a chip and a chip support during mounting. This mounting structure includes: a low-κ layer formed on top a semiconductor substrate; an electrode layer formed... Agent:
20150021782 - Design method of wiring layout, semiconductor device, program for supporting design of wiring layout, and method for manufacturing semiconductor device: According to one embodiment, a design method of layout formed by a sidewall method is provided. The method includes: preparing a base pattern on which a plurality of first patterns extending in a first direction and arranged at a first space in a second direction intersecting the first direction and... Agent: Kabushiki Kaisha Toshiba
20150021779 - Hard mask for back-end-of-line (beol) interconnect structure: A method of fabricating an interconnect structure on a wafer and an interconnect structure are provided. A dielectric layer is provided on the wafer. An interconnect is formed by etching a recess into the dielectric layer, where the etching utilizes a hard mask that includes a first layer deposited over... Agent:
20150021781 - Semiconductor device and method of manufacturing semiconductor device: A semiconductor device has a plurality of first opening portions formed in an interlayer insulating film. The surface is covered with a metal film with a surface having concavities and convexities which scatter reflected light. Size of the first opening portion is of the same level as a contact hole... Agent:
20150021783 - Semiconductor memory system: According to one embodiment, a semiconductor memory system includes a substrate, a plurality of elements and an adhesive portion. The substrate has a multilayer structure in which wiring patterns are formed, and has a substantially rectangle shape in a planar view. The elements are provided and arranged along the long-side... Agent: Kabushiki Kaisha Toshiba
20150021780 - Thin power device and preparation method thereof: A thin power device comprises a substrate having a first set of first contact pads at a front surface of the substrate electrically connecting to a second set of second contact pads at a back surface of the substrate, a through opening opened from the front surface and through the... Agent:
20150021786 - Bonded semiconductor structures: A method is disclosed that includes the steps outlined below. A first oxide layer is formed to divide a first semiconductor substrate into a first part and a second part. A second oxide layer is formed on the first part of the first semiconductor substrate. The first oxide layer is... Agent:
20150021784 - Front-to-back bonding with through-substrate via (tsv): Embodiments of mechanisms of forming a semiconductor device structure are provided. The semiconductor device structure includes a first semiconductor wafer and a second semiconductor wafer. The first semiconductor wafer includes a first transistor formed in a front-side of the first semiconductor wafer, and the second semiconductor wafer includes a second... Agent:
20150021785 - Hybrid bonding with through substrate via (tsv): Embodiments of forming a semiconductor device structure are provided. The semiconductor device structure includes a first semiconductor wafer and a second semiconductor wafer bonded via a hybrid bonding structure, and the hybrid bonding structure includes a first conductive material embedded in a first polymer material and a second conductive material... Agent:
20150021789 - Hybrid bonding with through substrate via (tsv): A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes a first semiconductor wafer and a second semiconductor wafer bonded via a hybrid bonding structure, and the hybrid bonding structure includes a first conductive material embedded in a polymer material and a second... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.
20150021788 - Multi-function and shielded 3d interconnects: A microelectronic unit includes a semiconductor element consisting essentially of semiconductor material and having a front surface, a rear surface, a plurality of active semiconductor devices adjacent the front surface, a plurality of conductive pads exposed at the front surface, and an opening extending through the semiconductor element. At least... Agent:
20150021787 - Semiconductor package: Provided is a semiconductor package including a plurality of first semiconductor chips that are stacked on a substrate and a second semiconductor chip disposed on the plurality of first semiconductor chips. The plurality of first semiconductor chips comprises a first semiconductor chip group and a second semiconductor chip group. The... Agent:
20150021790 - Semiconductor device: According to one embodiment, a semiconductor device includes a first conductive line and a second conductive line including a first extension region in which the first conductive line and the second conductive line extend in a first direction, and a bend region in which the first conductive line and the... Agent: Kabushiki Kaisha Toshiba
20150021791 - Semiconductor device: Various aspects of the present disclosure provide a semiconductor device and a method for manufacturing thereof, which can facilitate stacking of semiconductor die while saving manufacturing cost. In an example embodiment, the semiconductor device may comprise a first semiconductor die, a second semiconductor die bonded to a top surface of... Agent: Amkor Technology, Inc.
20150021792 - Electronic device and method for fabricating an electronic device: An embodiment method for fabricating electronic devices having two components connected by a metal layer includes applying a metal layer to each component and connecting the metal layers such that a single metal layer is formed.... Agent:
20150021793 - Semiconductor structures and methods of manufacture: Wire-bonded semiconductor structures using organic insulating material and methods of manufacture are disclosed. The method includes forming a metal wiring layer in an organic insulator layer. The method further includes forming a protective layer over the organic insulator layer. The method further includes forming a via in the organic insulator... Agent:Previous industry: Fences
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