Active solid-state devices (e.g., transistors, solid-state diodes) patents - Monitor Patents
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Active solid-state devices (e.g., transistors, solid-state diodes)

Below are recently published patent applications awaiting approval from the USPTO. Recent week's RSS XML file available below.
Listing for abstract view: USPTO application #, Title, Abstract excerpt,Patent Agent. Listing format for list view: USPTO National Class full category number, title of the patent application.
  
10/02/2014 > 276 patent applications in 100 patent subcategories.

20140291597 - High-speed, high-density, and low-power consumption phase-change memory unit, and preparation method thereof: The present invention provides a high-speed, high-density, and low-power consumption phase-change memory unit, and a preparation method thereof In the preparation method of the present invention, a transition material layer with an accommodation space is first prepared on a surface of a structure of a formed first electrode, where the... Agent: Shanghai Institute Of Microsystem And Information Technology, Chinese Academy

20140291598 - Resistive random access memory: Disclosed is a nonvolatile resistive random access memory. The nonvolatile resistive random access memory includes an upper electrode, a lower electrode, an ion supply layer formed on the lower electrode, and a resistance change layer formed on the ion supply layer. The ion supply layer includes copper-doped carbon. A low-power... Agent: Intellectual Discovery Co., Ltd.

20140291599 - Resistive random access memory: Disclosed is a nonvolatile resistive random access memory. The nonvolatile resistive random access memory includes a first electrode, a second electrode, an ion conducting layer disposed between the first and second electrodes, a first heat diffusion preventing layer formed on the first electrode, and a second heat diffusion preventing layer... Agent: Intellectual Discovery Co., Ltd.

20140291604 - Memory arrays and methods of forming same: Memory arrays and methods of forming the same are provided. One example method of forming a memory array can include forming a first conductive material having a looped feature using a self-aligning multiple patterning technique, and forming a first sealing material over the looped feature. A first chop mask material... Agent: Micron Technology, Inc.

20140291605 - Nonvolatile memory cell and nonvolatile memory device including the same: According to example embodiments, a nonvolatile memory cell includes a first electrode and a second electrode, a resistance change film between the first electrode and the second electrode, and a first barrier film contacting the second electrode. The resist change film contains oxygen ions and contacts the first electrode. The... Agent:

20140291602 - Oxide memory resistor including semiconductor nanoparticles: This invention relates to memory resistors, arrays of memory resistors and a method of making memory resistors. In particular, this invention relates to memory resistors having an on state and an off state, comprising: (a) a first electrode; (b) a second electrode; (c) a dielectric layer disposed between the first... Agent: Ucl Business PLC

20140291603 - Phase change memory and method of fabricating the phase change memory: Provided is a phase change memory, including: at least one wiring layer each including a first conductive layer and a phase change layer horizontally disposed on the first conductive layer; a heater layer disposed to vertically contact with the at least one wiring layer; and a second conductive layer disposed... Agent: Intellectual Discovery Co., Ltd.

20140291600 - Resistive random access memory using amorphous metallic glass oxide as a storage medium: The present invention relates to a resistive random access memory using amorphous metallic glass oxide as a storage medium, comprising a substrate, an insulation layer, a first electrode layer, a resistive memory layer, and a second electrode layer. In the present invention, an amorphous metallic glass oxide layer is mainly... Agent: National Taiwan University Of Science And Technology

20140291601 - Semiconductor device and method for fabricating the same, and microprocessor, processor, system, data storage system and memory system including the semiconductor device: A semiconductor device includes first lines extending in a first direction; second lines extending in a second direction crossing with the first direction; and first resistance variable elements defined between the first lines and the second lines and each including a first substance layer and a second substance layer, wherein... Agent:

20140291607 - Insulating sheet having heterogeneous laminated structure, method of manufacturing the same, and transistor including the insulating sheet: An insulating sheet has a heterogeneous laminated structure, and includes a graphene sheet and a hexagonal boron nitride sheet on the graphene sheet, the hexagonal boron nitride sheet having a root mean square (RMS) surface roughness of about 0.5 nm or less in a region having an area of about... Agent: Samsung Electronics Co., Ltd.

20140291608 - Quantum dot optical devices with enhanced gain and sensitivity and methods of making same: Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one... Agent: Invisage Technologies, Inc.

20140291606 - Solution-assisted carbon nanotube placement with graphene electrodes: A semiconductor device includes a substrate having at least one electrically insulating portion. A first graphene electrode is formed on a surface of the substrate such that the electrically insulating portion is interposed between a bulk portion of the substrate and the first graphene electrode. A second graphene electrode formed... Agent:

20140291609 - Junctionless semiconductor light emitting devices: A junctionless light emitting device comprises a field emitter cathode, and a light emitting semi-conductor material sandwiched between an ohmic contact (OC) that faces the injected electrons and a Schottky contact (SC). The field emitter cathode is configured to inject electrons into the ohmic contact.... Agent: The Regents Of The University Of California

20140291612 - Light-emitting diode and method of manufacturing the same: A light-emitting diode and method of manufacturing the same, including a flat portion and a mesa structure including an inclined side surface formed by wet etching and a top surface. A protective film and an electrode film sequentially cover a part of the flat portion and at least a part... Agent: Showa Denko K.k.

20140291610 - Method and apparatus for fabricating phosphor-coated led dies: The present disclosure involves lighting apparatus. The lighting apparatus includes a light-emitting device. The light-emitting device includes a first doped semiconductor layer. A light-emitting layer is disposed over the first doped semiconductor layer. A second doped semiconductor layer is disposed over the light-emitting layer. The second doped semiconductor layer has... Agent:

20140291611 - Method and apparatus for fabricating phosphor-coated led dies: The present disclosure involves lighting apparatus. The lighting apparatus includes a first doped semiconductor layer. A light-emitting layer is disposed over the first doped semiconductor layer. A second doped semiconductor layer is disposed over the light-emitting layer. The second doped semiconductor layer has a different type of conductivity than the... Agent:

20140291613 - Multiple quantum well structure: A multiple quantum well structure including a plurality of well-barrier pairs arranged along a direction is provided. Each of the well-barrier pairs includes a barrier layer and a well layer adjacent to the barrier layer. The barrier layers and the well layers of the well-barrier pairs are disposed alternately. A... Agent: Genesis Photonics Inc.

20140291615 - Extreme high mobility cmos logic: A CMOS device includes a PMOS transistor with a first quantum well structure and an NMOS device with a second quantum well structure. The PMOS and NMOS transistors are formed on a substrate.... Agent:

20140291614 - Thin film transistor: A thin film transistor is provided. The thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, a transition layer, an insulating layer and a gate electrode. The drain electrode is spaced apart from the source electrode. The gate electrode is insulated from the source electrode, the... Agent: Tsinghua University

20140291616 - Compound tunneling field effect transistor integrated on silicon substrate and method for fabricating the same: Compound tunneling field effect transistors integrated on a silicon substrate are provided with increased tunneling efficiency and an abrupt band slope by forming a source region with a material having a bandgap at least 0.4 electron volts (eV) narrower than that of silicon to increase a driving current (ON current)... Agent: Seoul National University R&db Foundation

20140291628 - Condensed-cyclic compound and organic light-emitting diode comprising the same: A condensed-cyclic compound is represented by Formula 1, and an organic light-emitting diode includes the condensed-cyclic compound. The organic light-emitting diode includes a first electrode, a second electrode facing the first electrode, and an organic layer. The organic layer includes an emission layer and the condensed-cyclic compound. The condensed-cyclic compound... Agent: Samsung Display Co., Ltd.

20140291626 - Deposition apparatus, method for forming thin film using the same, organic light emitting display apparatus and method for manufacturing the same: A deposition apparatus is configured to form a deposition layer on a substrate. The deposition apparatus includes a deposition source configured to face a first side of the substrate and to spray one or more depositing materials toward the substrate, a cooling stage configured to support a second side of... Agent: Samsung Display Co., Ltd

20140291620 - Deposition apparatus, method of manufacturing organic light emitting display apparatus, and organic light emitting display apparatus: A deposition apparatus for depositing a deposition material on a substrate in order to improve characteristics of a deposition layer includes: a deposition source facing the substrate and ejecting the deposition material; a patterning slit sheet including patterning slits for depositing the deposition material in a desired pattern and disposed... Agent: Samsung Display Co., Ltd.

20140291644 - Diode for a printable composition: An exemplary printable composition of a liquid or gel suspension of diodes comprises a plurality of diodes, a first solvent and/or a viscosity modifier. An exemplary diode comprises: a light emitting or absorbing region having a diameter between about 20 and 30 microns and a height between 2.5 to 7... Agent: Nthdegree Technologies Worldwide Inc.

20140291659 - Dioxaanthanthrene compound, laminated structure and formation method thereof, and electronic device and manufacturing method thereof: Provided is a dioxaanthanthrene compound represented by, for example, the following structural formula (1).... Agent: Sony Corporation

20140291657 - Element substrate and light emitting device: A light emitting device and an element substrate which are capable of suppressing variations in the luminance intensity of a light emitting element among pixels due to characteristic variations of a driving transistor without suppressing off-current of a switching transistor low and increasing storage capacity of a capacitor. According to... Agent:

20140291656 - Flexible hermetic thin film with light extraction layer: A protected organic light emitting diode includes an organic light emitting diode structure formed on a substrate, a hermetic barrier layer formed over at least part of the organic light emitting diode structure, and a light extraction layer. The barrier layer may include a glass material such as a tin... Agent:

20140291633 - Flexible substrate and flexible display device including the same: A flexible substrate includes a flexible base substrate and a first passivation layer formed on one surface of the base substrate and made of a material having a coefficient of thermal expansion lower than that of the base substrate.... Agent:

20140291654 - Heterocyclic compound and organic light-emitting device including the same: f

20140291638 - Host materials for oled application: The present disclosure provides novel compounds containing dibenzo[fg,op]tetracene and larger all-benzenoid moiety that can be used as hosts for phosphorescent emitters providing low-voltage, high-efficiency and high-stability devices.... Agent: Universal Display Corporation

20140291634 - Indole-based compound and organic light-emitting diode comprising the same: e

20140291651 - Light emitting polymers and devices: A polymer comprising units α, β, γ and δ wherein: unit α is present at 30 mole % to 60 mole % and is an optionally substituted arylene; unit β is present at 1 mole % to 30 mole % and is a unit comprising an optionally substituted fluorene; unit... Agent: Cambridge Display Technology Limited

20140291640 - Light-emitting device: A light-emitting device in which electrical characteristics of a transistor in a pixel can be monitored without degrading display quality is provided. The light-emitting device includes a plurality of pixels each comprising a pixel circuit. A pixel circuit included in a first pixel is electrically connected to a light-emitting element... Agent: Semiconductor Energy Laboratory Co., Ltd.

20140291648 - Light-emitting device: Provided is a light-emitting device with a high aperture ratio. The light-emitting device includes a first substrate; a first insulating film over the first substrate; a first partition over the first insulating film; a second insulating film which covers the first insulating film and the first partition and which has... Agent: Semiconductor Energy Laboratory Co., Ltd.

20140291645 - Light-emitting element, compound, organic compound, display module, lighting module, light-emitting device, display device, lighting device, and electronic device: A light-emitting element having high emission efficiency is provided. A light-emitting element having a low driving voltage is provided. A novel compound which can be used for a transport layer or as a host material or a light-emitting material of a light-emitting element is provided. A novel compound with a... Agent: Semiconductor Energy Laboratory Co., Ltd.

20140291647 - Light-emitting element, light-emitting device, electronic appliance, and lighting device: A light-emitting element which includes a plurality of light-emitting layers between a pair of electrodes and has low driving voltage and high emission efficiency is provided. A light-emitting element including first to third light-emitting layers between a cathode and an anode is provided. The first light-emitting layer includes a first... Agent: Semiconductor Energy Laboratory Co., Ltd.

20140291642 - Light-emitting element, light-emitting device, electronic device, and lighting device: Provided is a light-emitting element having a light-emitting layer which contains at least a host material and a plurality of guest materials, where the host material has a lower T1 level than that of at least one of the plurality of guest materials. The emission of the one of the... Agent: Semiconductor Energy Laboratory Co., Ltd.

20140291619 - Method for manufacturing organic light emitting display apparatus and organic light emitting display apparatus manufactured by the same: A method for manufacturing an organic light emitting display apparatus includes forming a layer by depositing on a substrate a deposition material emitted from a deposition assembly while conveying the substrate with respect to the deposition assembly. In the forming of the layer, at least two layers of a first... Agent: Samsung Display Co., Ltd.

20140291662 - Method for producing an optoelectronic component, and optoelectronic component: A method for producing an optoelectronic component may include forming a first electrode on a substrate, forming an organic functional layer structure on the first electrode; forming a second electrode on the organic functional layer structure, forming at least one contact for making contact with the first and/or second electrode,... Agent:

20140291618 - Method of manufacturing organic light-emitting display device and organic light-emitting display device: A method of manufacturing an organic light-emitting display device, wherein a voltage drop of a counter electrode is effectively reduced, includes: (i) forming a layer on a substrate using a first deposition assembly, wherein the first deposition assembly includes a patterning slit sheet that includes patterning slits corresponding to sub-pixels... Agent: Samsung Display Col., Ltd.

20140291649 - Oled display panel and manufacturing method thereof: An OLED display panel is provided which can control the problem of shedding even in high definition panels. Metal wiring 5 which conducts with an earth line of a flexible printed substrate 15 is provided on a substrate 1. A display area 2 comprised from a plurality of OLED elements... Agent: Japan Display Inc.

20140291658 - Optoelectronic component: An optoelectronic component having an outer surface facing the environment of the optoelectronic component and which is formed by a hydrophobic layer applied at least partly on a surface of the optoelectronic component.... Agent: Osram Opto Semiconductors Gmbh

20140291643 - Organic compound, light-emitting element, light-emitting device, display device, electronic device, and lighting device: A novel organic compound that forms an exciplex emitting light with high efficiency is provided. An organic compound with a triarylamine skeleton in which the three aryl groups of the triarylamine skeleton are a p-biphenyl group, a fluoren-2-yl group, and a phenyl group to which a dibenzofuranyl group or a... Agent: Semiconductor Energy Laboratory Co., Ltd.

20140291650 - Organic device and manufacturing method thereof: A method for manufacturing an organic device includes the steps of applying a photoresist onto at least an active first region arranged on a substrate of the organic device, and removing the photoresist from the substrate in a second region adjacent to the active first region. Additionally, the method includes... Agent:

20140291641 - Organic el display and electronic apparatus: An organic EL display includes: a first insulating layer on a lower side as well as a second insulating layer on an upper side, the first insulating layer and the second insulating layer being provided to a display region and a peripheral region; a first separation groove provided in the... Agent: Sony Corporation

20140291653 - Organic electroluminescence device and anthracene derivative: An organic electroluminescence device which comprises a cathode, an anode and an organic thin film layer comprising at least one layer comprising a light emitting layer and disposed between the cathode and the anode, wherein at least one layer in the organic thin film layer comprises an anthracene derivative having... Agent: Idemitsu Kosan Co., Ltd.

20140291661 - Organic electroluminescence display panel and organic electroluminescence display apparatus: An organic electroluminescence (EL) display panel includes an anode electrode formed above a bank and formed opposite to a plurality of cathode electrodes, and a charge functional layer commonly formed for each of the organic light-emitting layers across a plurality of aperture areas formed in the bank. A distance from... Agent:

20140291652 - Organic electroluminescent element, compound for organic electroluminescent element, and light-emitting device, display device, and illumination device using said element:

20140291660 - Organic electroluminescent element, material for organic electroluminescent element and light emitting device, display device, and illumination device, each employing organic electroluminescent element: This application relates in part to an organic electroluminescent element including a substrate, a pair of electrodes including an anode and a cathode, disposed on the substrate, and an organic layer(s) including a light emitting layer, in which the organic layer(s) contains a compound represented by the following formula (1),... Agent:

20140291624 - Organic light emitting device display and manufacturing method thereof: Provided is an organic light emitting display including a pixel circuit unit prepared over a substrate and comprising a plurality of thin film transistors (TFTs), and an organic light emitting device or diode (OLED) electrically connected to the pixel circuit unit. The pixel circuit unit and the OLED are connected... Agent: Samsung Display Co., Ltd.

20140291631 - Organic light emitting diode device: An organic light emitting diode device includes a first electrode and a second electrode facing each other, a charge-generating layer interposed between the first electrode and the second electrode, a first light emitting unit that emits blue and is interposed between the first electrode and the charge-generating layer, and a... Agent:

20140291623 - Organic light emitting diode display and method for manufacturing organic light emitting diode display: An organic light emitting diode display includes: a substrate; a first electrode on the substrate; a pixel definition layer having opening regions exposing the first electrode; a spacer on the pixel definition layer; a blocking layer between the pixel definition layer and the spacer, the blocking layer having a higher... Agent:

20140291632 - Organic light emitting diode display and method of manufacturing the same: A method of manufacturing an organic light emitting diode display according to an exemplary embodiment of the present invention includes: forming a first electrode on a substrate; forming an insulation layer on the first electrode; etching the insulation layer to expose the first electrode so as to form a pixel... Agent:

20140291636 - Organic light emitting diode display device and method for manufacturing the same: An organic light emitting diode display device is disclosed which includes: scan, data and power lines crossing one another and arranged to define a pixel region; a switching thin film transistor disposed at an intersection of the scan and data lines; an organic light emitting diode disposed in the pixel... Agent: Lg Display Co., Ltd.

20140291637 - Organic light emitting display apparatus: An organic light emitting display apparatus includes a substrate, an encapsulation member facing the substrate, a plurality of pixels between the substrate and the encapsulation member, each pixel including a light emission area and a non-emission area, a first electrode overlapping at least the light emission area, an intermediate layer... Agent: Samsung Display Co., Ltd.

20140291629 - Organic light emitting display device: An organic light emitting display device includes a first substrate including a pixel area and a non-pixel area; a pixel array formed on the pixel area of the first substrate; a protective layer formed over the pixel array, and having a trench that exposes at least a portion of the... Agent: Samsung Display Co., Ltd.

20140291622 - Organic light emitting display device and manufacturing method thereof: An organic light emitting display device includes a substrate comprising a first side and a second side, a first electrode on the first side of the substrate, an emitting layer on the first electrode, a second electrode on the emitting layer, and a slit-shaped pattern at the second side of... Agent: Samsung Display Co., Ltd.

20140291617 - Organic light emitting display device and method for manufacturing the same: In an aspect, an organic light emitting display device is provided. The organic light emitting display device may include a substrate; an organic light emitting unit arranged on the substrate; at least one inorganic layer, which encapsulates the organic light emitting unit and contains a low temperature viscosity transition (LVT)... Agent: Samsung Display Co., Ltd.

20140291630 - Organic light-emitting diode display and method of manufacturing same: Provided is an organic light-emitting diode (OLED) display including a flexible substrate; a driving circuit unit on the flexible substrate and having a thin film transistor (TFT); an OLED on the flexible substrate and coupled to the driving circuit unit; a sealing layer on the flexible substrate at the OLED... Agent: Samsung Display Co., Ltd.

20140291621 - Organic light-emitting display apparatus and method of manufacturing the same: An organic light-emitting display apparatus and a method of manufacturing the same are provided. The organic light-emitting display apparatus includes a substrate, an organic light-emitting device on the substrate, an encapsulation layer covering the organic light-emitting device, and a low adhesive layer covering the encapsulation layer.... Agent: Samsung Display Co., Ltd.

20140291625 - Organic light-emitting display apparatus and method of manufacturing the same: Provided is an organic light-emitting display apparatus including a substrate; and a plurality of pixels on the substrate, wherein each of the pixels comprise: an organic light-emitting device comprising a first electrode, a second electrode, and an intermediate layer between the first electrode and the second electrode, wherein the intermediate... Agent: Samsung Display Co., Ltd.

20140291627 - Organic light-emitting display device, method of manufacturing the same, and donor substrate and donor substrate set used to manufacture the organic light-emitting display device: An organic light-emitting display device, a method of manufacturing the same, and a donor substrate and a donor substrate set used to manufacture the organic light-emitting display device. According to an aspect of the present invention, there is provided an organic light-emitting display device comprising a substrate which comprises a... Agent: Samsung Display Co., Ltd.

20140291646 - Pyrene-based compound and organic light-emitting diode including the same: A pyrene-based compound and an organic light-emitting diode including the same, the pyrene-based compound being represented by Formula 1, below:... Agent: Samsung Display Co., Ltd.

20140291655 - Resin composition for sealing organic electroluminescent device; method of producing the same; and adhesive film, gas-barrier film, organic electroluminescent device and organic electroluminescent panel using the resin composition: wherein a surface roughness Ra of the shear failure surface after curing the resin composition is 0.5 μm or more; a production method thereof; an adhesive film and a gas-barrier formed of the resin composition; an organic electroluminescent device and an organic electroluminescent panel using the same.... Agent:

20140291639 - Semiconductor device, display unit, and electronic apparatus: Provided is a semiconductor device that includes: a transistor; an oxide semiconductor film; a first conductive film electrically connected to the oxide semiconductor film; and a first insulating film provided between the first conductive film and the oxide semiconductor film.... Agent: Sony Corporation

20140291635 - Thin-film transistor, method for manufacturing the same and display device including the same: A thin-film transistor, a method for manufacturing the same and a display device including the same are provided. The thin-film transistor may include a substrate, and an active layer formed on the substrate. The active layer may be made from an oxide semiconductor. A gate electrode may be formed above... Agent: Lg Display Co., Ltd.

20140291667 - Display device and electronic device: A novel display device capable of excellent reflective display is provided. The display device includes a transistor including a gate electrode layer, a gate insulating layer over the gate electrode layer, a semiconductor layer over the gate insulating layer, and a source electrode layer and a drain electrode layer over... Agent: Semiconductor Energy Laboratory Co., Ltd.

20140291666 - Flip-chip solid state light display: An exemplary flip-chip solid state light display includes a substrate, a plurality of solid state lighting elements and a plurality of thin film transistors; the solid state lighting elements and the thin film transistors are located on the substrate, and the solid state lighting elements each are adjacent to one... Agent: Hon Hai Precision Industry Co., Ltd.

20140291663 - High stability spintronic memory: An embodiment includes a magnetic tunnel junction (MTJ) including a free magnetic layer, a fixed magnetic layer, and a tunnel barrier between the free and fixed layers; the tunnel barrier directly contacting a first side of the free layer; and an oxide layer directly contacting a second side of the... Agent:

20140291670 - Image pickup device and image pickup display system: An image pickup device that includes: a pixel section including a plurality of pixels each configured to generate a signal charge based on radiation; a first field-effect transistor provided in the pixel section; and a second field-effect transistor provided in a peripheral circuit section of the pixel section. The first... Agent: Sony Corporation

20140291672 - Semiconductor device and manufacturing method thereof: The stability of steps of processing a wiring formed using copper or the like is increased. The concentration of impurities in a semiconductor film is reduced. Electrical characteristics of a semiconductor device are improved. A semiconductor device includes a semiconductor film, a pair of first protective films in contact with... Agent: Semiconductor Energy Laboratory Co., Ltd.

20140291671 - Semiconductor device and method for manufacturing the same: A first source electrode is formed in contact with a semiconductor layer; a first drain electrode is formed in contact with the semiconductor layer; a second source electrode which extends beyond an end portion of the first source electrode to be in contact with the semiconductor layer is formed; a... Agent: Semiconductor Energy Laboratory Co., Ltd.

20140291673 - Semiconductor device and method for manufacturing the same: A highly reliable semiconductor device with stable electrical characteristics and a method for manufacturing the semiconductor device are provided. A separation layer is formed between a source electrode and a drain electrode. The separation layer is formed using a material having a high insulating property. The separation layer between the... Agent: Semiconductor Energy Laboratory Co., Ltd.

20140291674 - Semiconductor device and method for manufacturing the same: A substrate having an insulating surface is prepared; a stacked film including a first oxide semiconductor layer and a second oxide semiconductor layer is formed over the substrate; a mask layer is formed over part of the stacked film and then dry etching treatment is performed, so that the stacked... Agent: Semiconductor Energy Laboratory Co., Ltd.

20140291675 - Semiconductor device and method for manufacturing the same: It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer. The... Agent:

20140291676 - Semiconductor device and method for manufacturing the same: A semiconductor device includes a substrate having an insulating surface; a light-transmitting first electrode provided over the substrate; a light-transmitting second electrode provided over the substrate; a light-transmitting semiconductor layer provided so as to be electrically connected to the first electrode and the second electrode; a first wiring electrically connected... Agent:

20140291668 - Semiconductor device, display unit, and electronic apparatus: Provided is a semiconductor device that includes a transistor. The transistor includes: a gate electrode; an oxide semiconductor film facing the gate electrode and including a first overlapping region that is overlapped with the gate electrode; a low-resistance region provided in the oxide semiconductor film; and a first separation region... Agent: Sony Corporation

20140291664 - Solution composition for forming oxide semiconductor, and oxide semiconductor and electronic device including the same: A solution composition for forming an oxide semiconductor includes a metal oxide precursor, and one of a metal thioacetate and a derivative thereof.... Agent: Samsung Electronics Co., Ltd.

20140291665 - Thin film transistor array panel and manufacturing method thereof: A thin film transistor array panel includes: a gate electrode disposed on a substrate, an insulating layer disposed on the gate electrode, an oxide semiconductor disposed on the gate insulating layer, source electrode overlapping a portion of the oxide semiconductor, a drain electrode overlapping another portion of the oxide semiconductor;... Agent: Samsung Display Co., Ltd.

20140291669 - Thin-film transistor, method for manufacturing the same and display device comprising the same: A thin-film transistor includes a substrate, a first gate electrode formed on the substrate, a first active layer that is formed on the substrate and includes a first oxide semiconductor layer and a first barrier layer, a second active layer that is formed on the first active layer and includes... Agent: Lg Display Co., Ltd.

20140291677 - Integrated multi-sensor module: A semiconductor-based multi-sensor module integrates miniature temperature, pressure, and humidity sensors onto a single substrate. Pressure and humidity sensors can be implemented as capacitive thin film sensors, while the temperature sensor is implemented as a precision miniature Wheatstone bridge. Such multi-sensor modules can be used as building blocks in application-specific... Agent: Stmicroelectronics Pte Ltd.

20140291679 - Semiconductor device: A semiconductor device disclosed in the present specification comprises: a semiconductor chip, a package that incorporates the semiconductor chip, and a plurality of lower-surface pads disposed on a lower surface of the package, a plurality of upper-surface pads disposed on an upper surface of the package, wherein the plurality of... Agent: Rohm Co., Ltd.

20140291678 - Semiconductor sensor reliability operation: Embodiments of the present invention provide a semiconductor sensor reliability system and method. Specifically, the present invention provides in-situ positioning of a reliability sensor (hereinafter sensors) within each functional block, as well as at critical locations, of a semiconductor system. The quantity and location of the sensors are optimized to... Agent: Ip Cube Partners (icp) Co., Ltd

20140291680 - Silicon member and method of producing the same: A silicon member and a method of producing the silicon member are provided. Cracking is suppressed in the silicon member even if the silicon member is used in a condition where it is heated. The silicon member 10 includes a coating layer 11 that coats a surface of the silicon... Agent: Mitsubishi Materials Corporation

20140291681 - Phase noise reduction in transistor devices: Semiconductor devices are disclosed having modified transistor dimensions configured to provide reduced phase noise in certain amplifier applications. Transistor devices having expanded emitter-poly overlap of the emitter window, which serves to separate the external base area from the lateral emitter-base junction, may experience a reduction of free electrons and holes... Agent:

20140291682 - High performance gesi avalanche photodiode operating beyond ge bandgap limits: Avalanche photodiodes (APDs) having at least one top stressor layer disposed on a germanium (Ge) absorption layer are described herein. The top stressor layer can increase the tensile strain of the Ge absorption layer, thus extending the absorption of APDs to longer wavelengths beyond 1550 nm. In one embodiment, the... Agent: Sifotonics Technologies Co., Ltd.

20140291686 - Array substrate, method for fabricating the same and display device: An array substrate, a method for fabricating the same and a display device as provided relate to the field of display technologies and can overcome the disadvantage of the gate-source capacitance being inconstant and prevent screen flicker, thereby improving the display effect of the display device. The array substrate comprises... Agent: Beijing Boe Optoelectronics Technology Co. Ltd.

20140291685 - Display device and electronic apparatus: A system suppresses a variation in luminance for each pixel by appropriately suppressing a variation in the parasitic capacitance of a sampling transistor. The system may include a pixel comprising a first transistor having a first deviation that results in a parasitic capacitance and a compensation element having a second... Agent: Sony Corporation

20140291683 - Display panel and method of manufacturing the same: A display panel includes a gate line, a gate electrode, a planarization layer, a gate insulation layer, an active layer, a data line, a source electrode, a drain electrode, and a pixel electrode. The gate electrode extends from the gate line. The planarization layer covers the gate line and the... Agent: Samsung Display Co., Ltd.

20140291684 - Display substrate: A display substrate including a base substrate having a switching device, a first insulating layer over the base substrate having a contact hole partially exposing an electrode of the switching device, a first electrode over the first insulating layer, a second insulating layer over the first electrode, and a second... Agent:

20140291688 - Active matrix solid state light display: An exemplary active matrix solid state light display includes a substrate, a plurality of solid state lighting elements and a plurality of thin film transistors. A buffer layer is formed on the substrate. The solid state lighting elements are formed on the buffer layer, and the thin film transistors are... Agent: Hon Hai Precision Industry Co., Ltd.

20140291687 - Display unit, manufacturing method thereof, and electronic apparatus: Provided is a display unit that includes: a laminated structure including two first wirings, a first insulating layer, and a concave part, in which the first wirings are adjacent to each other, the first insulating layer is provided on the first wirings and is made of an organic material, and... Agent: Sony Corporation

20140291693 - Group iii-n transistors on nanoscale template structures: A III-N semiconductor channel is formed on a III-N transition layer formed on a (111) or (110) surface of a silicon template structure, such as a fin sidewall. In embodiments, the silicon fin has a width comparable to the III-N epitaxial film thicknesses for a more compliant seeding layer, permitting... Agent:

20140291692 - High temperature gan based super semiconductor and fabrication process: A low temperature GaN based super semiconductor comprising a GaN supercell having equal percentages of Cu and at least one material from the family of P, As, or Sb. The GaN supercell is doped in accordance with the formula Ga1-2xCuxAsxN, wherein x is from about 6.25% to about 25%. The... Agent:

20140291689 - Light emitting diode with wave-shaped bragg reflective layer and method for manufacturing same: An exemplary light emitting diode includes a substrate and a first undoped GaN layer formed on the substrate. The first undoped GaN layer has ion implanted areas on an upper surface thereof. A plurality of second undoped GaN layers is formed on the first undoped GaN layer. Each of the... Agent: Advanced Optoelectronic Technology, Inc.

20140291690 - Optical device and method for manufacturing same: Provided are an optical device and a method for manufacturing same. The optical device according to the present invention including: a transparent amorphous substrate; a current injection layer formed on the substrate; a graphite layer formed on the current injection layer; and a semiconductor unit formed on the graphite layer,... Agent: Snu R&db Foundation

20140291694 - Planar nonpolar group-iii nitride films grown on miscut substrates: A nonpolar III-nitride film grown on a miscut angle of a substrate, in order to suppress the surface undulations, is provided. The surface morphology of the film is improved with a miscut angle towards an a-axis direction comprising a 0.15° or greater miscut angle towards the a-axis direction and a... Agent: The Regents Of The University Of California

20140291691 - Vertical gallium nitride jfet with gate and source electrodes on regrown gate: A semiconductor structure includes a GaN substrate with a first surface and a second surface. The GaN substrate is characterized by a first conductivity type and a first dopant concentration. A first electrode is electrically coupled to the second surface of the GaN substrate. The semiconductor structure further includes a... Agent: Avogy, Inc.

20140291699 - Ceramic/copper circuit board and semiconductor device: A ceramic/copper circuit board of an embodiment includes a ceramic substrate and first and second copper plates bonded to surfaces of the ceramic substrate via bonding layers containing active metal elements. In cross sections of end portions of the first and second copper plates, a ratio (C/D) of an area... Agent:

20140291698 - Low micropipe 100 mm silicon carbide wafer: A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 100 mm and a micropipe density of less than about 25 cm−2.... Agent: Cree, Inc.

20140291696 - Power electronics modules with solder layers having reduced thermal stress: Power electronics modules having solder layers with reduced thermal-stress are disclosed. In one embodiment, a power electronics module includes a power electronics device having a first surface, a second surface, a first edge, and a second edge opposite the first edge. The power electronics device has a device length measured... Agent: Toyota Motor Engineering & Manufacturing North America, Inc.

20140291701 - Semiconductor device: An object of the present invention is to provide a semiconductor device that allows the life of solder joint parts of electronic components to be increased. The semiconductor device according to the present invention includes ceramic, an upper pattern formed on the ceramic, and a resistor connected onto the upper... Agent: Mitsubishi Electric Corporation

20140291700 - Sic single crystal, sic wafer, and semiconductor device: An SiC single crystal includes a low dislocation density region (A) where the density of dislocations each of which has a Burgers vector in a {0001} in-plane direction (mainly a direction parallel to a <11-20> direction) is not more than 3,700 cm/cm3. Such an SiC single crystal is obtained by:... Agent:

20140291697 - Silicon carbide device and a method for forming a silicon carbide device: A silicon carbide device includes a silicon carbide substrate, an inorganic passivation layer structure and a molding material layer. The inorganic passivation layer structure laterally covers at least partly a main surface of the silicon carbide substrate and the molding material layer is arranged adjacent to the inorganic passivation layer... Agent: Infineon Technologies Ag

20140291695 - Silicon carbide device and a method for manufacturing a silicon carbide device: A silicon carbide device includes an epitaxial silicon carbide layer including a first conductivity type and a buried lateral silicon carbide edge termination region located within the epitaxial silicon carbide layer including a second conductivity type. The buried lateral silicon carbide edge termination region is covered by a silicon carbide... Agent: Infineon Technologies Ag

20140291702 - Optical/electrical transducer using semiconductor nanowire wicking structure in a thermal conductivity and phase transition heat transfer mechanism: An optical/electrical transducer device has housing, formed of a thermally conductive section and an optically transmissive member. The section and member are connected together to form a seal for a vapor tight chamber. Pressure within the chamber configures a working fluid to absorb heat during operation of the device, to... Agent: AblIPHolding LLC

20140291703 - Opto-electronic module: An optical proximity sensor module includes a substrate, a light emitter mounted on a first surface of the substrate, the light emitter being operable to emit light at a first wavelength, and a light detector mounted on the first surface of the substrate, the light detector being operable to detect... Agent:

20140291708 - Alternating current vertical light emitting element and manufacturing method thereof: This invention discloses an AC-type vertical light emitting element and fabrication method thereof, which achieves polarity reversal of two LEDs via regional laser stripping and die bonding. The two LEDs are placed on a conductive substrate (e.g. Si substrate); therefore, the bonding pads of the two LEDs are on the... Agent:

20140291706 - Light emitting diode device: A light emitting diode (LED) device includes: a substrate having a central portion; an LED chip unit formed on the central portion of the substrate; a circuit pattern having a positive electrode and a negative electrode that are formed on the substrate, each of the positive electrode and the negative... Agent:

20140291705 - Phosphor film, method of manufacturing the same, coating method of phosphor layer, method of manufacturing led package and led package manufactured thereby: There are provided a phosphor film, a method of manufacturing the same, and a method of coating an LED chip with a phosphor layer. The phosphor film includes: a base film; a phosphor layer formed on the base film and obtained by mixing phosphor particles in a partially cured resin... Agent:

20140291704 - Plasmonic ir devices: An infra-red (IR) device comprising a dielectric membrane formed on a silicon substrate comprising an etched portion; and at least one patterned layer formed within or on the dielectric membrane for controlling IR emission or IR absorption of the IR device, wherein the at least one patterned layer comprises laterally... Agent:

20140291707 - Semiconductor light device having a galvanic non-insulated driver: A semiconductor light-emitting device is disclosed. The device includes a plurality of semiconductor light sources and a driver with no galvanic isolation for operating the semiconductor light sources wherein the semiconductor light sources may be divided into at least two carriers, the carriers are applied on an electrically conductive substrate,... Agent: Osram Gmbh

20140291709 - Display device: A display device includes a first substrate, a second substrate, and a plurality of light emitting sections. The first substrate includes a first surface and a second surface which faces the first surface. The second substrate is arranged to face the first substrate, and is configured with a first surface... Agent: Sony Corporation

20140291710 - Light emitting device and image display unit: A light emitting device includes a package having a recess, a lead frame buried in the package so that one end of the lead frame is exposed at a bottom of the recess and another end protrudes to an exterior of the package, a light emitting element arranged on the... Agent:

20140291715 - Compact led package with reflectivity layer: LED packages are disclosed that are compact and efficiently emit light, and can comprise encapsulants with curved and planar surfaces. The packages can comprise a submount with a one or a plurality of LEDs, and in those with a plurality of LEDs each of the LEDs can emit the same... Agent: Cree, Inc.

20140291713 - Flip-chip light emitting diode package with moisture barrier layer: An exemplary light emitting diode (LED) package includes a substrate, a first electrode penetrating downward through the substrate, a second electrode penetrating downward through the substrate and spaced from the first electrode, an LED die arranged on the substrate and mounted to the first and second electrodes by flip-chip technology,... Agent: Advanced Optoelectronic Technology, Inc.

20140291716 - Light emitting device and method of manufacturing the same: Provided is a light emitting device with improved light extracting efficiency and further higher heat releasing performance. A light emitting device includes a planar lead frame having a first lead and a second lead, and includes a light emitting element mounted on the first lead, a resin frame surrounding a... Agent: Nichia Corporation

20140291719 - Light emitting diode package having frame with bottom surface having two surfaces different in height: Provided is a light emitting device package. It is a substrate comprising a top and a bottom surfaces being substantially parallel to each other; a light emitting diode chip on the substrate; a frame disposed around the light emitting diode chip and configured to reflect light emitted from the light... Agent:

20140291718 - Light emitting diodes: A LED includes a red light emitting unit, a green light emitting unit, a blue light emitting unit, and an optical grating located on a same plane. The red light emitting unit, the green light emitting unit and the blue light emitting unit are located around the optical grating. Each... Agent:

20140291717 - Method for manufacturing mach-zehnder modulator, method for manufacturing optical waveguide, and optical waveguide: A method for manufacturing a Mach-Zehnder modulator includes the steps of forming a stacked semiconductor layer, the stacked semiconductor layer including a first conductivity type semiconductor layer, a core layer and a second conductivity type semiconductor layer, forming a waveguide mesa, the waveguide mesa having a first portion, a second... Agent: Sumitomo Electric Industries, Ltd.

20140291712 - Phosphor and light emitting device: A phosphor and a light emitting device are provided. The phosphor comprises a composition having a formula of (BaaSr1-a)2-zSi5ObNn:EuZ, 0.03<a<0.75, 0<b<1, 7<n<9, and 0.03<z<0.3.... Agent: Chi Mei Corporation

20140291714 - Semiconductor light emitting device: The present disclosure relates to a semiconductor light emitting device, comprising: a plurality of semiconductor layers that grows sequentially on a growth substrate, with the plurality of semiconductor layers including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first... Agent: Semicon Light Co., Ltd.

20140291711 - Semiconductor light emitting device and package structure thereof: A semiconductor light emitting device and a package structure thereof are provided. The semiconductor light emitting device includes a substrate, an epitaxial structure layer, a first electrode, a second electrode and a patterned film structure. The substrate has a first surface and a second surface opposite to the first surface.... Agent: Lextar Electronics Corporation

20140291720 - Light emitting diode device and method for manufacturing same: An LED device includes a substrate having a top surface and a bottom surface. The substrate defines a through hole at a center thereof. The LED device also includes an electrode board. The electrode board defines a concave portion at a center thereof, and a convex portion connected to and... Agent: Advanced Optoelectronic Technology, Inc.

20140291721 - Surge protection circuit for power mosfets used as active bypass diodes in photovoltaic solar power systems: A protection circuit for metal-oxide-semiconductor field-effect transistors (MOSFETs) that are used as active bypass diodes in photovoltaic solar power systems is disclosed. The protection circuit comprises, a detection circuit for detecting the start of a surge event, a switch disposed to connect the MOSFET's drain to it's gate in response... Agent: Sunfield Semiconductor Inc.

20140291722 - Power semiconductor device and method of fabricating the same: There is provided a power semiconductor device, including a plurality of trench gates formed to be spaced apart from each other by a predetermined distance, a current increasing part formed between the trench gates and including a first conductivity-type emitter layer and a gate oxide formed on a surface of... Agent: Samsung Electro-mechanics Co., Ltd.

20140291723 - Semiconductor device and method for producing the same: A method of producing a seminconductor device is disclosed in which, after proton implantation is performed, a hydrogen-induced donor is formed by a furnace annealing process to form an n-type field stop layer. A disorder generated in a proton passage region is reduced by a laser annealing process to form... Agent:

20140291724 - Insulated gate bipolar transistor including emitter short regions: A semiconductor device includes an IGBT having a semiconductor body including a transistor cell array in a first area. A junction termination structure is in a second area surrounding the transistor cell array at a first side of the semiconductor body. An emitter region of a first conductivity type is... Agent:

20140291725 - Compound semiconductor device and method for manufacturing the same: A compound semiconductor device includes: a substrate; and a compound semiconductor lamination structure formed over the substrate, the compound semiconductor lamination structure including a buffer layer containing an impurity, and an active layer formed over the buffer layer.... Agent: Fujitsu Limited

20140291726 - Trench confined epitaxially grown device layer(s): Trench-confined selective epitaxial growth process in which epitaxial growth of a semiconductor device layer proceeds within the confines of a trench. In embodiments, a trench is fabricated to include a pristine, planar semiconductor seeding surface disposed at the bottom of the trench. Semiconductor regions around the seeding surface may be... Agent:

20140291727 - Method for forming semiconductor gate structure and semiconductor gate structure: A method for forming a semiconductor gate structure and a semiconductor gate structure are provided. The method includes: providing a substrate with a Ge layer as a surface thereof; forming a Sn layer on the Ge layer, in which an interface between the Ge layer and the Sn layer is... Agent: Tsinghua University

20140291728 - Power device chip and method of manufacturing the power device chip: According to example embodiments, a power device chip includes a plurality of unit power devices classified into a plurality of sectors, a first pad and a second pad. At least one of the first and second pads is divided into a number of pad parts equal to a number of... Agent: Samsung Electronics Co., Ltd.

20140291729 - Memory unit, memory unit array and method of manufacturing the same: A memory unit includes a substrate, at least one charge storage element, at least one first recessed access element, and an isolation portion. The substrate has a surface and the first recessed access element is disposed in an active area of the substrate and extending from the surface into the... Agent:

20140291730 - Semiconductor chip including digital logic circuit including linear-shaped conductive structures having electrical connection areas located within inner region between transistors of different type and associated methods: A first linear-shaped conductive structure (LCS) forms a gate electrode (GE) of a first transistor of a first transistor type. A second LCS forms a GE of a first transistor of a second transistor type. A third LCS forms a GE of a fourth transistor of the first transistor type.... Agent:

20140291731 - Semiconductor chip including region including linear-shaped conductive structures forming gate electrodes and having electrical connection areas arranged relative to inner region between transistors of different types and associated methods: A first linear-shaped conductive structure (LCS) forms gate electrodes (GE's) of a first transistor of a first transistor type and a first transistor of a second transistor type. A second LCS forms a GE of a second transistor of the first transistor type. A third LCS forms a GE of... Agent:

20140291732 - Photoelectric conversion apparatus and imaging system using the photoelectric conversion apparatus: In a photoelectric conversion apparatus including a charge holding portion, a part of an element isolation region contacting with a semiconductor region constituting the charge holding portion extends from a reference surface including the light receiving surface of a photoelectric conversion element into a semiconductor substrate at a level equal... Agent:

20140291733 - Strain sensing device using reduced graphene oxide and method of manufacturing the same: Provided is a strain sensing device using reduced graphene oxide (R-GO). The strain sensing device includes a flexible substrate, a gate electrode formed on the flexible substrate, a gate insulating layer configured to cover the gate electrode and include a part formed of a flexible material, an active layer formed... Agent: Intellectual Discovery Co., Ltd.

20140291735 - Double patterning via triangular shaped sidewall spacers: An intermediate semiconductor structure in fabrication includes a silicon semiconductor substrate, a hard mask of silicon nitride (SiN) over the substrate and a sacrificial layer of polysilicon or amorphous silicon over the hard mask. The sacrificial layer is patterned into sidewall spacers for mandrels of a filler material substantially different... Agent: Global Foundries, Inc.

20140291739 - Junction-less transistor having reverse polarity structure: A junction-less transistor having an reverse polarity structure includes a substrate, a semiconductor body, a gate and a gate insulation layer. The substrate has a first polarity. The semiconductor body is disposed on the substrate, and includes a drain, a source and a channel section connected between the drain and... Agent: National Tsing Hua Univesity

20140291740 - Perforated channel field effect transistor: A device including a plurality of perforations to a semiconductor channel is provided. The device includes a semiconductor structure forming the semiconductor channel. Additionally, the device includes a source contact, a drain contact, and a gate contact to the semiconductor channel. The plurality of perforations can be located in the... Agent: Sensor Electronic Technology, Inc.

20140291742 - Pixel structure and fabricating method thereof: A fabrication method of a pixel structure and a pixel structure are provided. A first patterned metal layer including scan lines and a gate is formed on a substrate. A first insulation layer, a semiconductor layer, an etching stop pattern and a metal layer are formed sequentially on the first... Agent:

20140291741 - Semiconductor device and fabrication method thereof: A method of fabricating a semiconductor device includes forming a first metal gate electrode over a substrate, forming a second metal gate electrode over the substrate, removing at least a part of the first metal gate electrode to form a first opening, and filling the first opening with a non-conductive... Agent:

20140291738 - Semiconductor device and manufacturing method therefor: A semiconductor electronic device structure includes an active area array disposed in a substrate, an isolation structure, a plurality of recessed gate structures, a plurality of word lines, and a plurality of bit lines. The active area array a plurality of active area columns and a plurality of active area... Agent: Inotera Memories, Inc.

20140291736 - Semiconductor device and method of manufacturing the same: In one embodiment, a first main terminal region of a first conductivity type and a second main terminal region of a second conductivity type, which is an opposite conductivity type of the first conductivity type, formed in the semiconductor substrate so as to sandwich a gate electrode, a diffusion layer... Agent: Kabushiki Kaisha Toshiba

20140291734 - Thin channel mosfet with silicide local interconnect: A semiconductor structure and method of manufacturing the same are provided. The semiconductor structure includes a semiconductor substrate having an isolated area comprising a first region and a second region. A first raised RSD region is formed in the first region and a second RSD region is formed in the... Agent: International Business Machines Corporation

20140291737 - Transistor architecture having extended recessed spacer and source/drain regions and method of making same: Techniques are disclosed for forming transistor architectures having extended recessed spacer and source/drain (S/D) regions. In some embodiments, a recess can be formed, for example, in the top of a fin of a fin-based field-effect transistor (finFET), such that the recess allows for forming extended recessed spacers and S/D regions... Agent:

20140291743 - Photoelectric conversion apparatus, imaging apparatus using the same, and manufacturing method thereof: A photoelectric conversion apparatus includes: an active matrix-type TFT array substrate on which photoelectric conversion elements and thin film transistors are arranged in a matrix shape, wherein the photoelectric conversion element connects with a drain electrode via a contact hole opened through a first interlayer insulation film provided above the... Agent: Mitsubishi Electric Corporation

20140291744 - Spin fet and magnetoresistive element: A spin FET of an aspect of the present invention includes source/drain regions, a channel region between the source/drain regions, and a gate electrode above the channel region. Each of the source/drain regions includes a stack structure which is comprised of a low work function material and a ferromagnet. The... Agent: Kabushiki Kaisha Toshiba

20140291745 - Deposited material and method of formation: A system and method for manufacturing a semiconductor device is provided. An embodiment comprises forming a deposited layer using an atomic layer deposition (ALD) process. The ALD process may utilize a first precursor for a first time period, a first purge for a second time period longer than the first... Agent:

20140291746 - Non-volatile semiconductor memory device: A non-volatile semiconductor memory device is proposed that has an unprecedented novel structure in which carriers can be injected into a floating gate by applying various voltages of the same polarity. According to the non-volatile semiconductor memory device of the present invention, in a memory transistor, a PN junction is... Agent: Floadia Corporation

20140291748 - Semiconductor memory device: A semiconductor memory device includes a bit line, an active region formed in a semiconductor substrate, a plug formed on the active region and connecting the bit line to the active region, a memory cell which includes a first gate insulating film on the active region, a charge storage layer... Agent: Kabushiki Kaisha Toshiba

20140291747 - Tungsten salicide gate source for vertical nand string to control on current and cell pillar fabrication: A non-volatile memory device and a method for forming the non-volatile memory device are disclosed. During fabrication of the memory device, a tungsten salicide is utilized as an etch-stop layer in place of a conventionally used aluminum oxide to form channel pillars having a high aspect ratio. Use of the... Agent:

20140291749 - Memory device having multiple dielectric gate stacks and related methods: A memory device may include a semiconductor substrate, and a memory transistor in the semiconductor substrate. The memory transistor may include source and drain regions in the semiconductor substrate and a channel region therebetween, and a gate stack. The gate stack may include a first dielectric layer over the channel... Agent:

20140291750 - Memory device having multiple dielectric gate stacks with first and second dielectric layers and related methods: A memory device may include a semiconductor substrate, and a memory transistor in the semiconductor substrate. The memory transistor may include source and drain regions in the semiconductor substrate and a channel region therebetween, and a gate stack having a first dielectric layer over the channel region, a second dielectric... Agent: Stmicroelectronics, Inc.

20140291752 - Memory structure and method for forming same: A memory structure and a method for forming the same are provided. The memory structure comprises: a substrate; a plurality of channel structures formed on the substrate, in which the plurality of channel structures are parallel with each other, each channel structure comprises a plurality of single crystal semiconductor layers... Agent: Tsinghua University

20140291751 - Semiconductor device: A semiconductor device includes a plurality of conductive layers and a plurality of insulating layers formed alternately with each other, at least one channel layer passing through the plurality of conductive layers and the plurality of insulating layers, and at least one first charge blocking layer surrounding the at least... Agent:

20140291757 - Semiconductor device: A semiconductor device disclosed herein includes an insulated gate, a main and a sub trench conductors. The main and sub trench conductors are formed in the cell region, and have a conductor that is covered with an insulation film and fills a trench extending in a first direction. The sub... Agent: Toyota Jidosha Kabushiki Kaisha

20140291756 - Semiconductor device and manufacturing method thereof: A semiconductor device includes a first n-type semiconductor layer, a p-type semiconductor layer, a second n-type semiconductor layer and a trench. The first n-type semiconductor layer includes a first interface and a second interface. The second interface forms an upper surface of a convex protruded from the first interface. The... Agent: Toyoda Gosei Co., Ltd.

20140291755 - Semiconductor device and semiconductor module: A semiconductor device includes a first source/drain region and a second source/drain region disposed in an active region of a semiconductor substrate, and a gate structure crossing the active region and disposed between the first and second source/drain regions, the gate structure including a gate electrode having a first part... Agent:

20140291754 - Semiconductor structure having buried word line and method of manufacturing the same: A semiconductor structure having buried word line formed in a trench in a semiconductor substrate includes a gate oxide layer, a gate conductor, a gate cap layer, a blocking layer, and an isolation structure. The gate oxide layer is formed on the inner surface of the trench, the gate conductor... Agent:

20140291753 - Trench mosfet structure having self-aligned features for mask saving and on-resistance reduction: A trench MOSFET structure having self-aligned features for mask saving and on-resistance reduction is disclosed, wherein the source region is formed by performing source Ion Implantation through contact opening of a contact interlayer, and further source diffusion. A dielectric sidewall spacer is formed on sidewalls of the contact interlayer in... Agent: Force Mos Technology Co., Ltd.

20140291758 - Semiconductor device having planar source electrode: A semiconductor device includes a channel layer on a substrate; cell trench patterns in the channel layer; and a source pattern on the cell trench patterns. The source pattern includes: grooves, each having inclined sidewalls and bottom that extends in a horizontal direction in a portion of the channel layer... Agent: Samsung Electronics Co., Ltd.

20140291759 - Mos transistor and fabrication method: MOS transistors and fabrication methods are provided. An exemplary MOS transistor includes a gate structure formed on a semiconductor substrate. A lightly doped region is formed by a light ion implantation in the semiconductor substrate on both sides of the gate structure. A first halo region is formed by a... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20140291761 - Asymmetric spacers: A semiconductor device having asymmetric spacers and steps for forming the same are disclosed. The spacers have difference capacitances, with the spacer having a higher capacitance formed over a source region of the device and the spacer having a lower capacitance formed over a drain region of the device. Embodiments... Agent: International Business Machines Corporation

20140291760 - Fet semiconductor device with low resistance and enhanced metal fill: In a method of fabricating a FET semiconductor device, a FET structure with a gate channel and dummy gate is formed on a layer of substrate. The gate channel includes one or more FINs, and spacer layers that line the sides of the gate channel and abut the layer of... Agent:

20140291762 - Power device integration on a common substrate: A semiconductor structure for facilitating an integration of power devices on a common substrate includes a first insulating layer formed on the substrate and an active region having a first conductivity type formed on at least a portion of the first insulating layer. A first terminal is formed on an... Agent:

20140291763 - Techniques for providing a semiconductor memory device: Techniques for providing a semiconductor memory device are disclosed. In one embodiment, the techniques may be realized as a semiconductor memory device including a plurality of memory cells arranged in an array of rows and columns. Each memory cell may include a first region connected to a source line extending... Agent: Micron Technology, Inc.

20140291764 - Esd protection structure and esd protection circuit: An electrostatic discharge (ESD) protection structure and an ESD protection circuit are provided. A PMOS transistor is located in a first region of a first N-type well region of a semiconductor substrate. A first doped base region located in a second region of a first N-type well region is N-type... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20140291765 - Esd protection structure and esd protection circuit: An electrostatic discharge (ESD) protection structure and an ESD protection circuit are provided. A PMOS transistor is located in a first region of a first N-type well region of a semiconductor substrate. A first doped base region located in a second region of a first N-type well region is N-type... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20140291766 - Planar device on fin-based transistor architecture: Techniques are disclosed for forming a planar-like transistor device on a fin-based field-effect transistor (finFET) architecture during a finFET fabrication process flow. In some embodiments, the planar-like transistor can include, for example, a semiconductor layer which is grown to locally merge/bridge a plurality of adjacent fins of the finFET architecture... Agent:

20140291767 - Semiconductor device and manufacturing method thereof: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes: a deep trench in a substrate; a sidewall insulating film on a side surface of the deep trench; an interlayer insulating film on the sidewall insulating film; and an air gap in the interlayer insulating film.... Agent: Magnachip Semiconductor, Ltd.

20140291769 - Cost-effective gate replacement process: The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a first gate structure and a second gate structure over a substrate. The first and second gate structures each include a high-k dielectric layer located over the substrate, a capping layer located over the high-k... Agent:

20140291768 - Spacer elements for semiconductor device: The present disclosure describes a semiconductor device including a semiconductor substrate and a gate stack disposed on the semiconductor substrate. A first spacer element is disposed on the substrate abutting the first gate stack. A second spacer element is adjacent the first spacer element. A source/raised drain is provided adjacent... Agent:

20140291770 - Method of making a finfet device: The present disclosure provides many different embodiments of fabricating a FinFET device that provide one or more improvements over the prior art. In one embodiment, a method of fabricating a FinFET includes providing a semiconductor substrate and a plurality of dummy fins and active fins on the semiconductor substrate. A... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20140291771 - Tid hardened and single even transient single event latchup resistant mos transistors and fabrication process: A radiation-hardened transistor is formed in a p-type body. An active region is disposed within the p-type body and has a perimeter defined by a shallow-trench isolation region filled with a dielectric material. Spaced-apart source and drain regions are disposed in the active region, forming a channel therebetween. A polysilicon... Agent: Microsemi Soc Corporation

20140291772 - Semiconductor devices with germanium-rich active layers and doped transition layers: Semiconductor device stacks and devices made there from having Ge-rich device layers. A Ge-rich device layer is disposed above a substrate, with a p-type doped Ge etch suppression layer (e.g., p-type SiGe) disposed there between to suppress etch of the Ge-rich device layer during removal of a sacrificial semiconductor layer... Agent:

20140291773 - Power semiconductor device and fabrication method thereof: A power semiconductor device includes a cell region on a semiconductor substrate, at least a transistor device in the cell region, a peripheral termination region encompassing the cell region, a plurality of epitaxial islands arranged around the cell region, and a grid type epitaxial layer in the peripheral termination region.... Agent: Anpec Electronics Corporation

20140291774 - Semiconductor device and method for manufacturing the same: A semiconductor device includes: a nitride semiconductor layer; a first silicon nitride film that is formed on the nitride semiconductor layer, has a first opening whose inner wall is a forward tapered shape; a second silicon nitride film that is formed on the first silicon nitride film, and has a... Agent: Sumitomo Electric Device Innovations, Inc.

20140291777 - Buffer layer on semiconductor devices: A semiconductor device including a substrate having a source region, a drain region, and a channel region disposed between the source region and the drain region. Additionally, the semiconductor device includes a high-k dielectric layer formed over the channel region, an n-metal formed over the high-k dielectric layer and a... Agent:

20140291776 - Methods of atomic-layer deposition of hafnium oxide/erbium oxide bi-layer as advanced gate dielectrics: Provided is a two-step ALD deposition process for forming a gate dielectric involving an erbium oxide layer deposition followed by a hafnium oxide layer deposition. Hafnium oxide can provide a high dielectric constant, high density, large bandgap and good thermal stability. Erbium oxide can act as a barrier against oxygen... Agent:

20140291775 - Semiconductor device: o

20140291778 - Integrated device of a capacitive type for detecting humidity, in particular manufactured using a cmos technology: An integrated capacitive-type humidity sensor formed in a semiconductor chip integrating a sensing capacitor and a reference capacitor. Each of the sensing and reference capacitors have at least a first electrode and at least a second electrode, the first and second electrodes of each of the sensing and reference capacitors... Agent: Stmicroelectronics S.r.l.

20140291780 - Mems device and method of manufacturing the same: According to one embodiment, a MEMS device including a first electrode provided on a support substrate, a second electrode opposed to the first electrode, having at least one end part overlapping the first electrode, and able to move in a direction it is opposed to the first electrode, and beam... Agent:

20140291781 - Method of packaging a mems transducer device and packaged mems transducer device: A packaged MEMS transducer device comprising: a die, including: a semiconductor body having a front side and a back side, opposite to one another in a first direction, at least one cavity extending through the semiconductor body between the front side and the back side, and at least one membrane... Agent: Stmicroelectronics S.r.i.

20140291779 - Semiconductor devices and methods for manufacturing semiconductor devices: A method includes a step of performing a time multiplexed etching process, wherein the last etching step of the time multiplexed etching process is of a first time duration. After performing the time multiplexed etching process, an etching step having a second time duration is performed, wherein the second time... Agent:

20140291786 - Component having a micromechanical microphone structure: Substrate-side overload protection for the diaphragm structure of a microphone component having a micromechanical microphone structure which impairs the damping properties of the microphone structure as little as possible, in which the microphone structure includes a diaphragm structure having at least one acoustically active diaphragm which is formed in a... Agent:

20140291783 - Cover for a mems microphone: A microphone assembly includes a base, a cover, and a microelectromechanical system (MEMS) die. The cover extends at least partially over and is coupled to the base. The cover and the base form a cavity. The MEMS die is coupled to the base and disposed within the cavity. At least... Agent: Knowles Electronics, LLC

20140291784 - Mems apparatus with increased back volume: A microelectromechanical system (MEMS) microphone assembly includes a base and a cover. The cover is coupled to the base and together with the base defines a cavity. The base forms a recess and the recess has dimensions and a shape so as to hold a MEMS die. The MEMS die... Agent: Knowles Electronics, LLC

20140291782 - Methods and devices for packaging integrated circuits: Methods and devices for packaging integrated circuits. A packaged device may include an integrated circuit, a first packaging component including a patterned surface, and a second packaging component. The patterned surface of the first packaging component may be adhesively coupled to a surface of the second packaging component or a... Agent: Stmicroelectronics Pte Ltd.

20140291785 - Microphone: A microphone has a base substrate having a main surface, an acoustic sensor mounted on the main surface, and a circuit element that processes a signal output from the acoustic sensor. The acoustic sensor has a sensor substrate having a first surface opposed to the base substrate, a second surface... Agent: Omron Corporation

20140291787 - Structure of mems electroacoustic transducer: A structure of micro-electro-mechanical systems (MEMS) electroacoustic transducer is disclosed. The MEMS electroacoustic transducer includes a substrate having a MEMS device region, a diaphragm having openings and disposed in the MEMS device region, a silicon material layer disposed on the diaphragm and sealing the diaphragm, and a conductive pattern disposed... Agent:

20140291788 - Magnetoresistive devices and methods for manufacturing magnetoresistive devices: A magnetoresistive device includes a substrate and an electrically insulating layer arranged over the substrate. The magnetoresistive device further includes a first free layer embedded in the electrically insulating layer and a second free layer embedded in the electrically insulating layer. The first free layer and the second free layer... Agent: Infineon Technologies Ag

20140291789 - Semiconductor magnetoresistive random-access memory (mram) device and manufacturing method thereof: The present disclosure describes a semiconductor MRAM device and a manufacturing method. The device reduces magnetic field induction “interference” (disturbance) phenomenon between adjacent magnetic tunnel junctions when data is written and read. This semiconductor MRAM device comprises a magnetic tunnel junction unit and a magnetic shielding material layer covering the... Agent:

20140291790 - Encapsulation of backside illumination photosensitive device: An encapsulation of backside illumination photosensitive device including a circuit sub-mount, a backside illumination photosensitive device, a plurality of conductive terminals, and a heat dissipation structure is provided. The backside illumination photosensitive device includes an interconnection layer and a photosensitive device array, wherein the interconnection layer is located on the... Agent:

20140291791 - Solid state imaging apparatus and electronic device: Provided is a solid state imaging apparatus including a transparent substrate formed of a birefringent material having a high refractive index in a direction vertical to a light receiving surface and a low refractive index in a direction parallel to the light receiving surface, the transparent substrate being disposed on... Agent: Sony Corporation

20140291792 - Transparent electrode apparatus, method, and applications: A shaped electrode on a light transmitting substrate utilizes total internal reflection to provide improved transmission of electromagnetic radiation (‘light’) compared to standard electrode designs that involve flat electrode surfaces. Redirection of incident light by a tilted or otherwise shaped contact or material added on the contact provides otherwise reflected... Agent: University Of Central Florida Research Foundation, Inc.

20140291793 - Solid-state imaging apparatus, solid-state imaging apparatus manufacturing method, and electronic apparatus: There is provided a solid-state imaging apparatus including a plurality of photoelectric conversion regions which photoelectrically convert light incident from a rear surface side of a semiconductor substrate, element isolation regions formed between the plurality of photoelectric conversion regions arranged in a matrix shape, and shielding members formed on upper... Agent: Sony Corporation

20140291794 - Microchannel avalanche photodiode (variants): The invention is directed to an avalanche photodiode containing a substrate and semiconductor layers with various electro-physical properties having common interfaces both between themselves and with the substrate. The avalanche photodiode may be characterized by the presence in the device of at least one matrix consisting of separate solid-state areas... Agent: Zecotek Imaging Systems Singapore Pte Ltd.

20140291795 - Cable connecting structure and cable connecting method: e

20140291796 - Imaging device, imaging apparatus, production apparatus and method, and semiconductor device: There is provided an imaging device including a semiconductor having a light-receiving portion that performs photoelectric conversion of incident light, electrically conductive wirings, and a contact group including contacts that have different sizes and connect the semiconductor and the electrically conductive wirings.... Agent: Sony Corporation

20140291797 - Semiconductor device: A semiconductor device of this disclosure includes: a circuit element mounted on a main face of a lead frame; an inductor mounted on a back face of the lead frame; and a resin body sealing the circuit element and the inductor; wherein the circuit element includes a thermo-sensitive element and... Agent: Sanken Electric Co., Ltd.

20140291798 - Semiconductor memory device: A semiconductor memory device comprises: a semiconductor substrate; a plurality of memory units provided on the semiconductor substrate and each including a plurality of memory cells that are stacked; and a plurality of bit lines formed above each of a plurality of the memory units aligned in a column direction,... Agent: Kabushiki Kaisha Toshiba

20140291799 - Semiconductor device including sti structure and fabrication method: Semiconductor devices including STI structures and their fabrication methods are provided. A mask layer is provided on a semiconductor substrate and patterned to form an opening in the mask layer to expose a surface portion of the semiconductor substrate. A trench is then formed in the semiconductor substrate by etching... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20140291800 - Semiconductor device: When a conductive layer occupying a large area is provided in a coiled antenna portion, it has been difficult to supply power stably. A memory circuit portion and a coiled antenna portion are disposed by being stacked together; therefore, it is possible to prevent a current from flowing through a... Agent:

20140291801 - Anti-fuse structure and programming method thereof: A method of programming an anti-fuse includes steps as follows. First, an insulating layer is provided. An anti-fuse region is defined on the insulating layer. An anti-fuse is embedded within the anti-fuse region of the insulating layer. The anti-fuse includes at least a first conductor and a second conductor. Then,... Agent:

20140291806 - Capacitor arrays for minimizing gradient effects and methods of forming the same: Semiconductor devices having capacitor arrays. A semiconductor device is formed including a capacitor array formed in a plurality of cells in a two-dimensional grid. The capacitor array includes a plurality of operational capacitors formed in a first subset of the plurality of cells along a diagonal of the capacitor array.... Agent:

20140291803 - Capacitor structure of gate driver in panel: A capacitor structure of gate driver in panel (GIP) includes a first metal layer, a first dielectric layer, a second metal layer, a second dielectric layer, a first and second transparent capacitor electrode layers. The first dielectric layer covers the first metal layer. The second metal layer is disposed on... Agent: Chunghwa Picture Tubes, Ltd.

20140291805 - Semiconductor device containing mim capacitor and fabrication method: A semiconductor device containing an MIM capacitor and its fabrication method are provided. A metal-insulator-metal (MIM) capacitor is formed on a first interlayer dielectric layer covering a substrate. The MIM capacitor includes a bottom electrode layer and a top electrode layer that are isolated from and laterally staggered with one... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20140291804 - Semiconductor devices having balancing capacitor and methods of forming the same: A semiconductor memory device includes a substrate including cell block, a balancing block, and a sense block. A plurality of cell bit lines are formed in the cell block of. A plurality of cell plugs are formed adjacent to side surfaces of the bit lines. Cell inner spacers, air spacers,... Agent: Samsung Electronics Co., Ltd.

20140291802 - Semiconductor structures with metal lines: Disclosed are semiconductor structures with metal lines and methods of manufacture which reduce or eliminate extrusion formation. The method includes forming a metal wiring comprising a layered structure of metal materials with an upper constraining layer. The method further includes forming a film on the metal wiring which prevents metal... Agent: International Business Machines Corporation

20140291807 - Semiconductor device and method for manufacturing semiconductor device: A semiconductor device includes a substrate, a first well of a first conductivity type formed within the substrate, a second well of a second conductivity type formed underneath the first well within the substrate and a third well of the second conductivity type formed horizontally to the first well within... Agent: Fujitsu Semiconductor Limited

20140291808 - Avalanche diode having an enhanced defect concentration level and method of making the same: The invention relates to an avalanche diode that can be employed as an ESD protection device. An avalanche ignition region is formed at the p-n junction of the diode and includes an enhanced defect concentration level to provide rapid onset of avalanche current. The avalanche ignition region is preferably formed... Agent:

20140291809 - Semiconductor substrate and a method of manufacturing the same: The semiconductor substrate includes a high-ohmic semiconductor material with a conduction band edge and a valence band edge, separated by a bandgap, wherein the semiconductor material includes acceptor or donor impurity atoms or crystal defects, whose energy levels are located at least 120 meV from the conduction band edge, as... Agent:

20140291811 - Group iii nitride crystal substrate, epilayer-containing group iii nitride crystal substrate, semiconductor device and method of manufacturing the same: A group III nitride crystal substrate is provided in which a uniform distortion at a surface layer of the crystal substrate represented by a value of |d1−d2|/d2 obtained from a plane spacing d1 at the X-ray penetration depth of 0.3 μm and a plane spacing d2 at the X-ray penetration... Agent:

20140291810 - Methods for growing iii-v materials on a non iii-v material substrate: The present invention relates to a method for manufacturing semiconductor materials comprising epitaxial growing of group III-V materials, for example gallium arsenide (GaAs), on for example a non III-V group material like silicon (Si) substrates (wafers), and especially to pre-processing steps providing a location stabilisation of dislocation faults in a... Agent: Integrated Optoelectronics As

20140291813 - Laser machining method and chip: While reliably cutting an object to be processed, the strength of the resulting chips is improved. An object to be processed 1 is irradiated with laser light L, so as to form modified regions 17, 27, 37, 47 extending along lines to cut 5 and aligning in the thickness direction... Agent:

20140291812 - Semiconductor packages having an electric device with a recess: Embodiments are directed to a package that includes an electric device having a recess. In one embodiment, the electric device is a sensor and the recess reduces signal drift of the sensor caused by thermal expansion of the package. In another embodiment, the recess is substantially filled with adhesive material,... Agent: Stmicroelectronics Pte Ltd.

20140291814 - Insulating substrate, method of manufacturing the same, and semiconductor device: An insulating substrate includes: a transparent insulating layer; a first metal layer that is provided on a first face of the transparent insulating layer; and a second metal layer that is provided on a second face of the transparent insulating layer that is opposite from the first face. The first... Agent: Toyota Jidosha Kabushiki Kaisha

20140291815 - Processing a wafer for an electronic circuit: According to a disclosed embodiment, there is provided a method of processing a silicon wafer for use in a substrate for an electronic circuit, comprising: impregnating the silicon wafer with impurities that form one or more deep energy levels within the band gap of silicon, wherein at least one of... Agent: Isis Innovation Limited

20140291816 - Semiconductor device and method of manufacturing a semiconductor device with a continuous silicate glass structure: A method of manufacturing a semiconductor device includes forming a continuous silicate glass structure over a first surface of a semiconductor body, including a first part of the continuous glass structure over an active area of the semiconductor body and a second part of the continuous glass structure over an... Agent:

20140291817 - Semiconductor device including porous low-k dielectric layer and fabrication method: Semiconductor devices including porous low-k dielectric layers and fabrication methods are provided. A dielectric layer is formed on a substrate by introducing and polymerizing a main reaction gas on a surface of the substrate. The main reaction gas has a chemical structure including a ring-shaped group, silicon, carbon, and hydrogen,... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20140291819 - Hybrid carbon-metal interconnect structures: Embodiments of the present disclosure are directed towards techniques and configurations for hybrid carbon-metal interconnect structures in integrated circuit assemblies. In one embodiment, an apparatus includes a substrate, a metal interconnect layer disposed on the substrate and configured to serve as a growth initiation layer for a graphene layer and... Agent:

20140291818 - Integrated circuit device facilitating package on package connections: In embodiments described herein, an integrated circuit (IC) package is provided. The IC package can include a substrate having opposing first and second surfaces, an IC die coupled to the first surface of the substrate, a first plurality of conductive elements coupled to conductive regions on the first surface of... Agent: Broadcom Corporation

20140291820 - Semiconductor device and method of forming shielding layer over active surface of semiconductor die: A semiconductor wafer contains a plurality of semiconductor die separated by a non-active area of the semiconductor wafer. A plurality of contact pads is formed on an active surface of the semiconductor die. A first insulating layer is formed over the semiconductor wafer. A portion of the first insulating layer... Agent:

20140291821 - Semiconductor package having grounding member and method of manufacturing the same: A semiconductor package and method of manufacture are provided. The semiconductor package may include a package substrate, a semiconductor chip, a molding member and a grounding member. The package substrate may include a ground pad and a signal pad. The semiconductor chip may be arranged on an upper surface of... Agent: Samsung Electronics Co., Ltd.

20140291822 - Integrated circuit package: An integrated circuit (“IC”) package including an IC assembly mounted on a leadframe and an encapsulant block covering the IC assembly and portions of the leadframe. The encapsulant block has a molded chamfered outer surface portion and the leadframe has a saw cut outer periphery.... Agent: Texas Instruments Incorporated

20140291823 - Chip package and method of manufacturing the same: Embodiments provide provides a chip package. The chip package may include a leadframe having a die pad and a plurality of lead fingers; a first chip attached to the die pad, the first chip being bonded to one or more of the lead fingers via a first set of wire... Agent:

20140291827 - Lead frame and semiconductor device: A lead frame includes an outer lead and a plating layer that covers a lower surface and side surfaces of the outer lead. The plating layer does not cover the upper surface of the outer lead. A frame base material is exposed from the plating layer at the upper surface... Agent: Shinko Electric Industries Co., Ltd.

20140291824 - Leadframe, semiconductor package including a leadframe and method for producing a leadframe: A lead frame includes a die pad and a lead finger with an inner portion which is configured to be electrically connected to contact pads of a die and with an outer portion which has an attach portion. The attach portion is configured to be soldered to an external solder... Agent: Infineon Technologies Ag

20140291828 - Semiconductor device and method of manufacturing the same: A semiconductor device includes: a semiconductor element having an electrode facing a first direction; a first lead having a conductive distal end surface facing the electrode, and a rising portion which is connected to the distal end surface to extend away from the electrode; a conductive bonding material bonding the... Agent: Rohm Co., Ltd.

20140291825 - Semiconductor device and semiconductor module: A semiconductor device in the preferred embodiment includes: a lead frame comprising a die pad and an electrode terminal; and at least one semiconductor chip bonded to a surface of the die pad, wherein the lead frame excluding a bottom surface thereof and the semiconductor chip are sealed by a... Agent: Mitsubishi Electric Corporation

20140291826 - Semiconductor device manufacturing method and semiconductor device: A semiconductor device and a manufacturing method for a semiconductor device in which during QFP (quad flat package assembly) a wire passing over a bus bar and coupled to an inner lead is set at a loop height different from a second wire at a low loop height, and a... Agent: Renesas Electronics Corporation

20140291829 - Adhesive bonding technique for use with capacitive micro-sensors: A micro-sensor device that includes a passivation-protected ASIC module and a micro-sensor module bonded to a patterned cap provides protection for signal conditioning circuitry while allowing one or more sensing elements in the micro-sensor module to be exposed to an ambient environment. According to a method of fabricating the micro-sensor... Agent: Stmicroelectronics Pte Ltd.

20140291830 - Semiconductor packages having package-on-package structures: A semiconductor package includes a lower package with a lower semiconductor chip on a lower package substrate, and an upper package with an upper semiconductor chip on an upper package substrate. The upper semiconductor chip has a plurality of chip pads and the upper package substrate has a plurality of... Agent:

20140291831 - Semiconductor device and manufacturing method for semiconductor device: A semiconductor device includes a metallic plate, a bonding layer, a semiconductor chip, and a resin molding. The semiconductor chip is fixed to the metallic plate with the bonding layer. The resin molding is in contact with the metallic plate, and covers the semiconductor chip. In the semiconductor device, a... Agent: Toyota Jidosha Kabushiki Kaisha

20140291832 - Integrated cooling modules of power semiconductor device: A semiconductor module is disclosed having at least one power semiconductor device, wherein the at least one power semiconductor device has first and second planar sides; a first thermally conductive substrate in thermal contact with the first planar side of the power semiconductor device; a first cooling module defining a... Agent: Infineon Technologies Ag

20140291833 - Semiconductor device: In a semiconductor device, a semiconductor module is pressed against a cooler by a spring member. The spring member is compressed by a beam member that is connected with a strut fixed to the cooler. The cooler has a pressed part in which the semiconductor module is pressed, and a... Agent: Toyota Jidosha Kabushiki Kaisha

20140291838 - Design scheme for connector site spacing and resulting structures: A system and method for preventing cracks in a passivation layer is provided. In an embodiment a contact pad has a first diameter and an opening through the passivation layer has a second diameter, wherein the first diameter is greater than the second diameter by a first distance of about... Agent:

20140291837 - Embedded package and method for manufacturing the same: An embedded package includes a semiconductor chip divided into a cell region and a peripheral region, having a first surface and a second surface which faces away from the first surface, and including an integrated circuit which is formed in the cell region on the first surface, a bonding pad... Agent: Sk Hynix Inc.

20140291835 - Ic package with integrated waveguide launcher: Embodiments described herein include an integrated circuit (IC) device. For example, the IC device can include a substrate configured to be coupled to a printed circuit board (PCB), an IC die attached to the substrate, and a waveguide launcher formed on the substrate. The waveguide launcher is electrically coupled to... Agent: Broadcom Corporation

20140291836 - Semiconductor device: A semiconductor device includes a substrate having a plurality of electrodes and a plurality of leads that are connected to the electrodes and a semiconductor element that is mounted on the substrate. The semiconductor element has a rectangular shape including a long side, a short side, and a corner portion,... Agent: Seiko Epson Corporation

20140291841 - Semiconductor device, method for manufacturing same, and electronic component: [Solution] A plurality of insulating film rings (32) are selectively formed on a front surface (13) of an Si substrate (29), and surface pads (33) are formed opposite openings (42) of the insulating film rings (32). Next, by etching the Si substrate (29) from a back surface (14), through holes... Agent: Rohm Co., Ltd.

20140291834 - Semiconductor devices and packages including conductive underfill material and related methods: Semiconductor devices and device packages include at least one semiconductor die electrically coupled to a substrate through a plurality of conductive structures. The at least one semiconductor die may be a plurality of memory dice, and the substrate may be a logic die. An underfill material disposed between the at... Agent: Micron Technology, Inc.

20140291839 - Solder joint flip chip interconnection: A flip chip interconnect has a tapering interconnect structure, and the area of contact of the interconnect structure with the site on the substrate metallization is less than the area of contact of the interconnect structure with the die pad. Also, a bond-on-lead or bond-on-narrow pad or bond on a... Agent:

20140291840 - Stacked semiconductor package: A stacked semiconductor chip includes a main substrate supporting a semiconductor chip module, wherein the semiconductor module comprises at least two sub semiconductor chip modules each having a sub substrate in which a first semiconductor chip is embedded and at least two second semiconductor chips are stacked on the sub... Agent:

20140291842 - Enhanced flip-chip die architecture: A method of assembling a multi-chip electronic device into a thin electronic package entails inverting a flip-chip die arrangement over a hollow substrate, stacking additional dies on the hollow substrate to form a multi-chip electronic device, and encapsulating the multi-chip electronic device. Containment of the encapsulant can be achieved by... Agent: Stmicroelectronics, Inc.

20140291843 - Hybrid solder and filled paste in microelectronic packaging: Hybrid solder for solder balls and filled paste are described. A solder ball may be formed of a droplet of higher temperature solder and a coating of lower temperature solder. This may be used with a solder paste that has an adhesive and a filler of low temperature solder particles,... Agent:

20140291844 - Semiconductor device and manufacturing method thereof: Provided are a semiconductor device having a stably formed structure capable of being electrically connected to a second electronic device without causing damage to the semiconductor device, and a manufacturing method thereof. In one embodiment, the semiconductor device may comprise a semiconductor die, an encapsulation part formed on lateral surfaces... Agent: Amkor Technology, Inc

20140291845 - Semiconductor device and method for manufacturing semiconductor device: An inventive semiconductor device includes a semiconductor chip having a passivation film, and a sealing resin layer provided over the passivation film for sealing a front side of the semiconductor chip. The sealing resin layer extends to a side surface of the passivation film to cover the side surface.... Agent: Rohm Co., Ltd.

20140291846 - Array substrate and fanout line structure of the array substrate: A fanout line structure of an array substrate includes a plurality of fanout lines arranged on a fanout area of the array substrate, where the fanout line is used to connect a signal line with a bonding pad. Lengths of different fanout lines are different. At least one fanout line... Agent: Shenzhen China Star Optoelectronics Technology Co., Ltd

20140291847 - Methods of forming a barrier system containing an alloy of metals introduced into the barrier system, and an integrated circuit product containing such a barrier system: One illustrative method disclosed herein includes forming a trench/via in a layer of insulating material, forming a barrier system comprised of at least one barrier material and at least two metallic elements, and performing a heating process to form a metal alloy comprised of the at least two metallic elements... Agent: Globalfoundries Inc.

20140291848 - Semiconductor device: A semiconductor device may include pillars and a plurality of conductive layers being stacked while surrounding the pillars and including a plurality of first regions including non-conductive material layers and a plurality of second regions including conductive material layers, wherein the first regions and the second regions are alternately arranged.... Agent:

20140291852 - Interconnect for an optoelectronic device: Interconnects for optoelectronic devices are described. For example, an interconnect for an optoelectronic device includes an interconnect body having an inner surface, an outer surface, a first end, and a second end. A plurality of bond pads is coupled to the inner surface of the interconnect body, between the first... Agent:

20140291851 - Lead pin for package substrate: A lead pin for a package substrate includes: a connection pin being inserted into a hole formed in an external substrate; a head part formed on one end of the connection pin; and a barrier part formed on one surface of the head part in order to block the path... Agent:

20140291850 - Method for manufacturing electronic devices: An embodiment for manufacturing electronic devices is proposed. The embodiment includes the following phases: a) forming a plurality of chips in a semiconductor material wafer including a main surface; each chip includes respective integrated electronic components and respective contact pads facing the main surface; said contact pads are electrically coupled... Agent: Stmicroelectronics S.r.i.

20140291849 - Multi-level semiconductor package: A semiconductor package includes a semiconductor die having a first electrode at a first side and a second electrode at a second side opposing the first side, a first lead under the semiconductor die and connected to the first electrode at a first level of the package, and a second... Agent: Infineon Technologies Austria Ag

20140291865 - Electronic apparatus and fabrication method of the same: A first semiconductor component and a second semiconductor component are attached together via an adhesion layer so that the first semiconductor component and the second semiconductor component are electrically connected with each other via a through electrode. The through electrode is formed to fill a through hole formed in the... Agent: Shinko Electric Industries Co., Ltd.

20140291859 - Electronic component built-in substrate and method of manufacturing the same: An electronic component built-in substrate, includes, a substrate having an opening portion, a first wiring layer formed in the substrate, an electronic component arranged in the opening portion, a first insulating layer formed on one face of the substrate and sealing the electronic component, a second insulating layer formed on... Agent: Shinko Electric Industries Co., Ltd.

20140291858 - Method for making a photolithography mask intended for the formation of contacts, mask and integrated circuit corresponding thereto: A method for making a photolithography mask for formation of electrically conducting contact pads between tracks of a metallization level and electrically active zones of integrated circuits formed on a semiconductor wafer includes forming a first mask region including first opening zones intended for the formation of the contact pads.... Agent: Stmicroelectronics (rousset) Sas

20140291853 - Package structure of a chip and a substrate: A package structure includes a thin chip substrate, a stabilizing material layer, a chip and a filling material. A first circuit metal layer of the substrate is inlaid into a dielectric layer and a co-plane is defined by the first circuit metal layer and the dielectric layer and is exposed... Agent: Kinsus Interconnect Technology Corp.

20140291855 - Semiconductor device and semiconductor system including the same: A semiconductor device includes a plurality of semiconductor chips in a stack structure and a through-silicon via suitable for passing through the chips and transfer a signal from or to one or more of the chips. Each of the chips includes a buffering block disposed in path of the through-silicon... Agent: Sk Hynix Inc.

20140291861 - Semiconductor device having groove-shaped via-hole: The semiconductor device has insulating films 40, 42 formed over a substrate 10; an interconnection 58 buried in at least a surface side of the insulating films 40, 42; insulating films 60, 62 formed on the insulating film 42 and including a hole-shaped via-hole 60 and a groove-shaped via-hole 66a... Agent: Fujitsu Semiconductor Limited

20140291862 - Semiconductor device having groove-shaped via-hole: The semiconductor device has insulating films 40, 42 formed over a substrate 10; an interconnection 58 buried in at least a surface side of the insulating films 40, 42; insulating films 60, 62 formed on the insulating film 42 and including a hole-shaped via-hole 60 and a groove-shaped via-hole 66a... Agent: Fujitsu Semiconductor Limited

20140291863 - Semiconductor device having groove-shaped via-hole: The semiconductor device has insulating films 40, 42 formed over a substrate 10; an interconnection 58 buried in at least a surface side of the insulating films 40, 42; insulating films 60, 62 formed on the insulating film 42 and including a hole-shaped via-hole 60 and a groove-shaped via-hole 66a... Agent: Fujitsu Semiconductor Limited

20140291864 - Semiconductor device having groove-shaped via-hole: The semiconductor device has insulating films 40, 42 formed over a substrate 10; an interconnection 58 buried in at least a surface side of the insulating films 40, 42; insulating films 60, 62 formed on the insulating film 42 and including a hole-shaped via-hole 60 and a groove-shaped via-hole 66a... Agent: Fujitsu Semiconductor Limited

20140291854 - Semiconductor packages having tsv and adhesive layer: A semiconductor package includes a first semiconductor chip on a substrate and having a plurality of through-silicon vias (TSVs). A second semiconductor chip having an active layer is on the first semiconductor chip. An adhesive layer is between the first semiconductor chip and the active layer. Connection terminals extend through... Agent: Samsung Electronics Co., Ltd.

20140291860 - Semiconductor-on-insulator integrated circuit with interconnect below the insulator: An integrated circuit assembly comprises an insulating layer, a semiconductor layer, a handle layer, a metal interconnect layer, and transistors. The insulating layer has a first surface, a second surface, and a hole extending from the first surface to the second surface. The semiconductor layer has a first surface and... Agent: Io Semiconductor, Inc.

20140291857 - Stacked structure and method of manufacturing the stacked structure: A stacked structure, includes: a wiring; an insulating layer; a substrate; and a protective layer, wherein the wiring, the insulating layer, and the substrate are stacked from a bottom side, and an end portion of the wiring is projected from a side face of the stacked structure, and the protective... Agent: Sony Corporation

20140291856 - Tsv layout structure and tsv interconnect structure, and fabrication methods thereof: TSV layout structure and TSV interconnect structure, and their fabrication methods are provided. An exemplary TSV interconnect structure includes a semiconductor substrate having a first region and a second region; and a plurality of through-holes disposed in the first region and the second region of the semiconductor substrate. An average... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20140291867 - Apparatus and method to attach a wireless communication device into a semiconductor package: A semiconductor package includes an RFID chip positioned between a first die and a second die attached to a support substrate. The RFID chip is free of electrical connections to the dice and the support substrate. The RFID chip is sized to correspond to an interposer board. Data pertaining to... Agent: Stmicroelectronics Pte Ltd.

20140291866 - Embedded die-down package-on-package device: An apparatus including a die; and a build-up carrier including alternating layers of conductive material and dielectric material disposed on a device side of the die and dielectric material embedding a portion of a thickness dimension of the die; and a plurality of carrier contact points disposed at a gradation... Agent:

20140291868 - Stack type semiconductor package: A stack type semiconductor package includes a lower semiconductor package including a lower package substrate and at least one lower semiconductor chip disposed on the lower package substrate; an upper semiconductor package including an upper package substrate larger than the lower package substrate and at least one upper semiconductor chip... Agent:

20140291869 - Anisotropic conductive film including conductive adhesive layer and semiconductor device connected by the same: An anisotropic conductive film includes a conductive adhesive layer including conductive particles and insulating particles, and an insulating adhesive layer not including conductive particles. In the anisotropic conductive film, the conductive particles and the insulating particles of the conductive adhesive layer have a total particle density of 7.0×105/d2 to 10.0×105/d2... Agent:

20140291870 - Resin composition, resin composition sheet, semiconductor device and production method therefor: A resin composition excellent in both characteristics of preservation stability and connection reliability is provided by a resin composition that contains (a) an epoxy compound, (b) a microcapsule type hardening acceleration agent, and (c) an inorganic particle whose surface is modified with a compound that has an unsaturated double bond.... Agent:

20140291871 - Impedance controlled packages with metal sheet or 2-layer rdl: A microelectronic assembly is disclosed that is capable of achieving a desired impedance for raised conductive elements. The microelectronic assembly may include an interconnection element, a surface conductive element, a microelectronic device, a plurality of raised conductive elements, and a bond element. The microelectronic device may overlie the dielectric element... Agent:

20140291872 - Gel having improved thermal stability: A gel has improved thermal stability and is the ultraviolet hydrosilylation reaction product of (A) an organopolysiloxane having an average of at least 0.1 silicon-bonded alkenyl group per molecule and (B) a cross-linker having an average of at least 2 silicon-bonded hydrogen atoms per molecule. (A) and (B) react via... Agent:

  
  
  
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