Active solid-state devices (e.g., transistors, solid-state diodes) patents - Monitor Patents
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Active solid-state devices (e.g., transistors, solid-state diodes)

Below are recently published patent applications awaiting approval from the USPTO. Recent week's RSS XML file available below.
Listing for abstract view: USPTO application #, Title, Abstract excerpt,Patent Agent. Listing format for list view: USPTO National Class full category number, title of the patent application.
  
12/04/2014 > 288 patent applications in 96 patent subcategories.

20140353567 - Current-limiting layer and a current-reducing layer in a memory device: A current-limiting layer and a current-reducing layer are incorporated into a resistive switching memory device to form memory arrays. The incorporated current-limiting layer reduces the occurrence of current spikes during the programming of the resistive switching memory device and the incorporated current-reducing layer minimizes the overall current levels that can... Agent:

20140353566 - Reram materials stack for low-operating-power and high-density applications: A switching element for resistive-switching memory (ReRAM) provides a controllable, consistent filament break-point at an abrupt structural discontinuity between a layer of high-k high-ionicity variable-resistance (VR) material and a layer of low-k low-ionicity VR material. The high-ionicity layer may be crystalline and the low-ionicity layer may be amorphous. The consistent... Agent: Kabushiki Kaisha Toshiba

20140353570 - Memristor: A nanobridge or microbridge comprising a non-magnetic alloy of at least a first and second metal, the meals being selected from Group 8, 9, 10 and 11, wherein the first metal is present in a range of 50-95 wt. %, and memristors comprising one or more of same.... Agent: Technische Universiteit Delft

20140353572 - Resistance random access memory device: A resistance random access memory device according to an embodiment includes a first electrode, a second electrode and a variable resistance film provided between the first electrode and the second electrode. The second electrode includes material selected from the group consisting of silver, copper, zinc, gold, titanium, nickel, cobalt, tantalum,... Agent: Kabushiki Kaisha Toshiba

20140353568 - Thermally optimized phase change memory cells and methods of fabricating the same: A thermally optimized phase change memory cell includes a phase change material element disposed between first and second electrodes. The second electrode includes a thermally insulating region having a first thermal resistivity over the first electrode and a metallic contact region interposed between the phase change material element and the... Agent:

20140353569 - Variable resistance memory device and method of manufacturing the same: A variable resistance memory device and a method of manufacturing the same are provided. The variable resistance memory device includes a first insulating layer formed on a semiconductor substrate, the first insulating layer having a first hole formed therein. A switching device is formed in the first hole. A second... Agent: Sk Hynix Inc.

20140353571 - Vertical transistor phase change memory: Vertical transistor phase change memory and methods of processing phase change memory are described herein. One or more methods include forming a dielectric on at least a portion of a vertical transistor, forming an electrode on the dielectric, and forming a vertical strip of phase change material on a portion... Agent:

20140353573 - Methods and systems to reduce location-based variations in switching characteristics of 3d reram arrays: Methods for reducing location-based variations in the switching characteristics of memory cells within a memory array are described. In some cases, the resistance of an embedded resistor within each memory cell may be set to reduce the overall variation in series resistances for the memory cells within a memory array.... Agent:

20140353575 - Determination of optimal diameters for nanowires: Methods of optimizing the diameters of nanowire photodiode light sensors. The method includes comparing the response of nanowire photodiode pixels having predetermined diameters with standard spectral response curves and determining the difference between the spectral response of the photodiode pixels and the standard spectral response curves. Also included are nanowire... Agent:

20140353574 - Field effect transistor structure comprising a stack of vertically separated channel nanowires: A field effect transistor structure comprises a source and a drain on a substrate, and a stack of n vertically separated channel nanowires isolated from the substrate and connecting the source and the drain, where n is an integer and 2≦n≦20. The channel nanowires collectively comprise at least two different... Agent: The Board Of Trustees Of The University Of Illinois

20140353577 - Emission in nanoscale structures via nanocavity plasmons: Plasmonic nanoscale devices with increased emissions are disclosed. Highly concentrated fields of plasmonic nanocavities are integrated with a core to alter the excited-state optical processes. A plasmonic device (e.g., a nanowire) is created using a direct or indirect bandgap material core, an interlayer and a metallic shell.... Agent:

20140353576 - Integrated vacuum microelectronic device and fabrication method thereof: An integrated vacuum microelectronic device comprises: a highly doped semiconductor substrate, at least one insulating layer) placed above said doped semiconductor substrate, a vacuum aperture formed within said at least one insulating layer and extending to the highly doped semiconductor substrate, a first metal layer acting as a cathode, a... Agent:

20140353579 - Blue light-emitting diodes based on zinc selenide quantum dots: The present invention relates to colloidal quantum dots, to a process for producing such colloidal quantum dots, to the use thereof and to optoelectronic components comprising colloidal quantum dots.... Agent:

20140353582 - High efficiency light emitting diode and method of fabricating the same: Disclosed herein are a high efficiency light emitting diode and a method of fabricating the same. The light emitting diode includes a semiconductor stacked structure disposed on the support substrate and including a gallium nitride-based p-type semiconductor layer, a gallium nitride-based active layer, and a gallium nitride-based n-type semiconductor layer;... Agent: Mitsubishi Chemical Corporation

20140353580 - Light emitting device, method of manufacturing the same, light emitting device package and lighting system: A light emitting device includes an active layer formed between first and second semiconductor layers. The first semiconductor layer includes a first surface facing the active layer, a second surface opposing the first surface, and a side surface that includes a stepped portion. The stepped portion causes the side surface... Agent: Lg Innotek Co., Ltd.

20140353578 - Light-emitting device: A light emitting device disclosed herein comprises a substrate, a buffer stack formed on the substrate, a tunneling junction stack formed on the buffer stack comprising an un-doped layer, a light-emitting stack formed on the tunneling junction stack, and a contact stack formed on the light emitting stack. The structure... Agent:

20140353581 - Light-emitting diode chip: A light-emitting diode chip comprising:—a semiconductor body (1) having a plurality of active regions (2), wherein—at least one of the active regions (2) has at least two subregions (21 . . . 28),—the active region (2) has at least one barrier region (3) arranged between two adjacent subregions (21 .... Agent: Osram Opto Semiconductors Gmbh

20140353583 - Polarization independent photodetector with high contrast grating and two dimensional period structure: A photodetector is provided with a high contrast grating (HCG) reflector first reflector that has a two dimensional periodic structure. The two dimensional structure is a periodic structure that is a symmetric structure with periodic repeating. The symmetrical structure provides that polarization modes of light are undistinguishable. A second reflector... Agent: The Regents Of The University Of California

20140353584 - Epitaxial wafer, method for producing the same, photodiode, and optical sensor device: A method for producing an epitaxial wafer includes a step of growing an epitaxial layer structure on a III-V semiconductor substrate, the epitaxial layer structure including a III-V semiconductor multiple-quantum well and a III-V semiconductor surface layer, wherein the step of growing the epitaxial layer structure on the substrate is... Agent: Sumitomo Electric Industries, Ltd.

20140353585 - Frontside-illuminated barrier infrared photodetector device and methods of fabricating the same: Frontside-illuminated barrier infrared photodetector devices and methods of fabrication are disclosed. In one embodiment, a frontside-illuminated barrier infrared photodetector includes a transparent carrier substrate, and a plurality of pixels. Each pixel of the plurality of pixels includes an absorber layer, a barrier layer on the absorber layer, a collector layer... Agent:

20140353587 - Epitaxial wafer for heterojunction type field effect transistor: An epitaxial wafer for a heterojunction type FET includes an AlN primary layer, a stepwisely composition-graded buffer layer structure, a superlattice buffer layer structure, a GaN channel layer, and a nitride semiconductor electron supply layer, which are sequentially provided on a Si substrate, the stepwisely composition-graded buffer layer structure including... Agent:

20140353586 - Semiconductor element and method for producing the same: A method for producing a semiconductor element includes a step of forming a multiple quantum well in which a GaSb layer and an InAs layer are alternately stacked on a GaSb substrate by MOVPE, wherein, in the step of forming a multiple quantum well, an InSb film is formed on... Agent: Sumitomo Electric Industries, Ltd.

20140353588 - Quantum interference device: A device to produce an output based on interference of electron waves is disclosed. Said device comprised out of two areas having different medium properties for propagation of an electron wave, where the first of said areas is connected to a source to inject electrons and the second of said... Agent:

20140353589 - Replacement gate self-aligned carbon nanostructure transistor: A self-aligned carbon nanostructure transistor is formed by a method that includes providing a material stack including a gate dielectric material having a dielectric constant of greater than silicon oxide and a sacrificial gate material. Next, a carbon nanostructure is formed on an exposed surface of the gate dielectric material.... Agent:

20140353590 - Replacement gate self-aligned carbon nanostructure transistor: A self-aligned carbon nanostructure transistor is formed by a method that includes providing a material stack including a gate dielectric material having a dielectric constant of greater than silicon oxide and a sacrificial gate material. Next, a carbon nanostructure is formed on an exposed surface of the gate dielectric material.... Agent: International Business Machines Corporation

20140353592 - Thin film transistor using a carbon nanotube as a channel and a display device including the same: A thin film transistor includes a gate electrode configured to receive a control voltage, a source electrode insulated from the gate electrode, and configured to receive an input voltage, a drain electrode insulated from the gate electrode, and configured to receive an output voltage, at least two carbon nanotube patterns... Agent:

20140353591 - Transistor using single crystal silicon nanowire and method for manufacturing same: A transistor using a single crystal silicon nanowire and a method for fabricating the transistor is disclosed. The transistor using a single crystal silicon nanowire comprises a substrate and a single crystal silicon nanowire formed on the substrate. Here, the single crystal silicon nanowire comprises a source region and a... Agent: Korea University Research And Business Foundation

20140353593 - Tunnel field effect transistor and method for making thereof: A vertical tunneling field effect transistor (TFET) and method for forming a vertical tunneling field effect transistor (TFET) is disclosed. The vertical tunneling field effect transistor TFET comprises a vertical core region, a vertical source region, a vertical drain region and a gate structure. The vertical core region is extending... Agent:

20140353646 - Aromatic amine derivative and organic electroluminescence element using same: An aromatic amine derivative is represented by a formula (1-1) below. In the formula (1-1), R2 to R5 and R7 to R10 are each independently a hydrogen atom or a substituent. In the formula (1-1), R1 and R6 are represented by a formula (2-1) below, and L1 to L3 are... Agent: Idemitsu Kosan Co., Ltd.

20140353617 - Condensed cyclic compound and organic light-emitting diode including the same:

20140353632 - Display device: A display device includes a pixel unit including a plurality of pixels coupled to a plurality of control lines and to a plurality of power lines to commonly receive same control signals and power source, a plurality of inlet pads positioned outside the pixel unit, the plurality of inlet pads... Agent: Samsung Display Co., Ltd.

20140353639 - Display device and method for producing the same: A display device which can be produced at reduced material cost and has a smaller peripheral frame area, and a method for producing the same, are provided. A display device includes a first substrate including a display area, which includes an organic EL light emitting layer; a second substrate located... Agent: Japan Display Inc.

20140353627 - Display device and method of manufacturing the same: A display device includes a first substrate, an anode electrode, a pixel defining layer, an organic light emitting layer, a multi-layered complex, a passivation insulating layer and a second substrate. The anode electrode is disposed on the first substrate. The pixel defining layer is disposed on the first substrate and... Agent: Samsung Display Co., Ltd.

20140353637 - Display device and method of manufacturing the same: According to one embodiment, a method of manufacturing a display device, includes preparing a first substrate formed such that a first resin layer is formed on a first support substrate, and thereafter a display element portion and a mounting portion are formed above the first resin layer and a protection... Agent: Japan Display Inc.

20140353638 - Display device and method of manufacturing the same: According to one embodiment, a method of manufacturing a display device, includes preparing a first substrate formed such that a first resin layer is formed on a first support substrate, preparing a second substrate formed such that a second resin layer is formed on a second support substrate, attaching the... Agent: Japan Display Inc.

20140353602 - Display panel and a method of manufacturing the same: A display panel may include an organic light emitting diode, a first film disposed on the organic light emitting diode and a second film comprising a fluoro polymer and disposed on the first film.... Agent: Samsung Display Co., Ltd.

20140353601 - Film for display apparatus, organic light-emitting display apparatus including the same, and method of manufacturing the film: A film for a display apparatus includes a first thin film including at least one of an organic material and an inorganic material, a metal thin film in contact with a first portion of a surface of the first thin film, and a second thin film in contact with a... Agent: Samsung Display Co., Ltd.

20140353613 - Flexible display device and method of manufacturing the same: A flexible display device includes a flexible substrate including a display region and a peripheral region substantially surrounding the display region, the display region including a first display region and a second display region, a first display structure at the first display region of the flexible substrate, the first display... Agent: Samsung Display Co., Ltd.

20140353628 - Heteroaromatic semiconducting polymers: The present teachings relate to new semiconducting polymers. The polymers disclosed herein can exhibit high carrier mobility and/or efficient light absorption/emission characteristics, and can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.... Agent:

20140353654 - Light-emitting element, light-emitting device, lighting device, and electronic devices: A light-emitting element which at least includes a monomolecular layer including a luminescent center material with a fluorescent light-emitting property, and a monomolecular layer including a host material with a carrier (electron or hole)-transport property and a band gap larger than a band gap (note that a band gap refers... Agent:

20140353650 - Material for organic electroluminescent element and organic electroluminescent element using same: A compound represented by the following formula (1).... Agent: Idemitsu Kosan Co., Ltd.

20140353621 - Method of manufacturing organic light-emitting display apparatus and organic light-emitting display apparatus manufactured by using the method: A method of manufacturing an organic light-emitting display apparatus, which can minimize damage to an emission layer, and an organic light-emitting display apparatus manufactured using the method are provided. The method includes: preparing a backplane including a pixel electrode and a pixel-defining layer protruding further than an upper surface of... Agent: Samsung Display Co., Ltd.

20140353594 - Oled panel, manufacturing method, and related testing method: The present invention discloses an OLED panel, a manufacturing method and related testing method. The OLED panel includes a substrate (20), a cover (40) positioned oppositely to the substrate (20), an OLED device positioned on the substrate (20), a humidity sensing film (42) positioned on the cover (40), a sealed... Agent: Shenzhen China Star Optoelectronics Technology Co., Ltd.

20140353645 - Optical film for reducing color shift and organic light-emitting display device employing the same: An optical film includes: a high refractive index pattern layer including a material having a refractive index greater than 1 and having a first surface and a second surface which face each other, where a plurality of grooves is defined in the first surface, and each of the plurality of... Agent:

20140353618 - Optical films for reducing color shift and organic light-emitting display apparatuses employing the same: Optical films, and organic-light-emitting display apparatuses, include a high refractive index pattern layer including a first surface and a second surface facing each other. The first surface includes a pattern having grooves. The grooves each have a curved surface and a depth greater than a width. The high refractive index... Agent: Samsung Corning Precision Materials Co., Ltd.

20140353626 - Optical films for reducing color shift and organic light-emitting display devices employing the same: Optical films, and organic light-emitting display devices employing the same, include a high refractive index pattern layer including a lens pattern region and a non-pattern region alternately formed, wherein the lens pattern region includes a plurality of grooves each having a depth larger than a width thereof, and the non-pattern... Agent: Samsung Corning Precision Materials Co., Ltd.

20140353657 - Organic el device and method for manufacturing organic el device: The present invention aims at developing an organic EL device having a structure for power supply to a new organic EL element. The device is formed of unit organic EL elements planarly distributed on a substrate having a planar expanse and includes organic EL element columns and organic EL element... Agent:

20140353641 - Organic el display device: A circuit unit is provided in which it is possible to connect circuit board to a terminal using a simple operation without removing a passivation film from above the terminal. A metal electrode which conducts with a circuit element is formed above a substrate. Multiple column shaped insulation films are... Agent: Japan Display Inc.

20140353640 - Organic electroluminescence device: A heterocyclic compound wherein three five-membered rings are fused to one benzene ring and a saturated or unsaturated ring is fused to each five-membered ring. An organic electroluminescence device includes one or more organic thin film layers between an anode and a cathode. The one or more organic thin film... Agent: Idemitsu Kosan Co., Ltd.

20140353642 - Organic electroluminescence display device: An organic electroluminescence display device includes a first light-emitting unit and a second light-emitting unit that are stacked between a cathode and an anode. The first light-emitting unit includes a first electron injection layer and a first light-emitting layer that are stacked. The first electron injection layer is arranged closer... Agent: Japan Display Inc.

20140353649 - Organic electronic device: wherein A1 is a C6-C20 arylene and each of A2-A3 is independently selected from a C6-C20 aryl, wherein the aryl or arylene may be unsubstituted or substituted with groups comprising C and H or with a further LiO group, provided that the given C count in an aryl or arylene... Agent:

20140353656 - Organic led element, translucent substrate, and method for manufacturing organic led element: The present invention provides an organic LED element having the significantly larger light emission area than conventional ones. The invention relates to an organic LED element, comprising: a transparent substrate; a light scattering layer; a transparent first electrode; an organic light-emitting layer; and a second electrode formed in this order,... Agent: Asahi Glass Company, Limited

20140353604 - Organic light emitting device having a bulk layer comprising a first and second material: Disclosed is an organic light emitting diode device including an anode, a cathode, an emission layer between the anode and the cathode, and a buffer layer positioned between the emission layer and the anode. The buffer layer includes an oxide, fluoride, quinolate, or acetoacetate compound of an alkaline metal or... Agent: Samsung Display Co., Ltd.

20140353600 - Organic light emitting diode display: An organic light emitting diode display including a first electrode disposed in a display area of a display panel, and electrically connected to a transistor connected to a gate wiring and a data wiring; a pixel definition film provided on the display panel, and having an opening through which the... Agent: Samsung Display Co., Ltd.

20140353629 - Organic light emitting diode display: An organic light emitting diode (OLED) display including: a substrate; a semiconductor layer disposed on the substrate and including a switching semiconductor layer and a driving semiconductor layer connected to the switching semiconductor layer; a first gate insulating layer disposed on the semiconductor layer; a switching gate electrode and a... Agent: Samsung Display Co., Ltd.

20140353633 - Organic light emitting diode display and manufacturing method thereof: An organic light emitting diode display includes a substrate including a thin film transistor, a plurality of pixels on a pixel area of the substrate, a plurality of auxiliary electrodes between the pixels, an opposite electrode on the pixels and on the auxiliary electrodes, the opposite electrode being electrically connected... Agent: Samsung Display Co., Ltd.

20140353636 - Organic light emitting diode display device: A display device includes a first pixel and a second pixel. The second pixel is controlled to emit light in a predetermined range in a first time period and to not emit light in the predetermined range in a second time period during which the first pixel emits light. The... Agent: Samsung Display Co., Ltd.

20140353625 - Organic light emitting diodes displays and manufacturing method thereof: A cracks propagation preventing, polarization film attaches to outer edges of a lower inorganic layer of an organic light emitting diodes display where the display is formed on a flexible substrate having the lower inorganic layer blanket formed thereon. The organic light emitting diodes display further includes a display unit... Agent: Samsung Display Co., Ltd.

20140353607 - Organic light emitting display and method of manufacturing the same: An organic light emitting display includes a base substrate, a first transistor, an insulation layer having a first contact hole and a second contact hole, a first electrode, an organic layer, a second electrode and a pixel definition layer having a third contact hole. The second electrode may be connected... Agent: Samsung Display Co., Ltd.

20140353611 - Organic light emitting display apparatus and method of manufacturing the same: An organic light emitting display apparatus and a method of manufacturing the same are provided. The apparatus includes a substrate, a first electrode formed on the substrate, an intermediate layer formed on the first electrode. The intermediate layer includes an organic emission layer. A second electrode is formed on the... Agent: Samsung Display Co., Ltd.

20140353603 - Organic light emitting display device: An organic light emitting display device includes an active layer of a transistor disposed on a substrate, a gate electrode disposed on the active layer and on a first insulation layer, a second insulation layer which is disposed on the gate electrode and exposes a source area and a drain... Agent: Samsung Display Co., Ltd.

20140353597 - Organic light emitting display device and manufacturing method thereof: In an aspect, an organic light emitting display device including a substrate, a first electrode on the substrate, a pixel defining layer defining pixel areas disposed on the substrate, a plurality of pixels disposed at the pixel area, wherein one of the pixels comprises a first electrode, an auxiliary electrode... Agent: Samsung Display Co., Ltd.

20140353615 - Organic light emitting display device and method for manufacturing the same: Provided are an organic light emitting display device and a method for manufacturing the same. The organic light emitting display device includes a substrate, first electrode positioned on the substrate, a pixel defining film positioned on the substrate and at least partially exposing the first electrode, an organic layer positioned... Agent: Samsung Display Co. Ltd.

20140353614 - Organic light emitting display device and method of manufacturing the same: Provided is an organic light emitting display device. The organic light emitting display device includes: a substrate including a display region and a plurality of peripheral regions adjacent the display region; a display structure disposed in the display region; and a strain gauge disposed in two peripheral regions facing each... Agent: Samsung Display Co., Ltd.

20140353643 - Organic light emitting display device and method of manufacturing the same: An organic light emitting display device may include: a cell array comprising gate lines and data lines intersecting each other on a substrate so as to define a plurality of pixel areas, a plurality of thin film transistors formed at intersections between the gate lines and the data lines to... Agent: Lg Display Co., Ltd.

20140353623 - Organic light emitting display module and display device including the same: An organic light emitting display module includes a display panel, a bracket, and a sheet structure body. The display panel includes an organic light emitting diode. The bracket is coupled to the display panel to support the display panel. The sheet structure body is interposed between the display panel and... Agent: Samsung Display Co., Ltd.

20140353635 - Organic light-emitting device and image display system employing the same: The disclosure provides an organic light-emitting device. The organic light-emitting device includes a substrate, and an organic light-emitting pixel array disposed on the substrate. The organic light-emitting pixel array includes a plurality of pixels. Each pixel includes a first sub-pixel and a second sub-pixel. Each sub-pixel includes a first electrode,... Agent: Innolux Corporation

20140353596 - Organic light-emitting diode: An organic light-emitting diode includes a first electrode and a second electrode facing the first electrode; an emission layer between the first electrode and the second electrode; a hole transport layer between the first electrode and the emission layer and includes a first hole transport layer, a second hole transport... Agent: Samsung Display Co., Ltd.

20140353624 - Organic light-emitting diode: An organic light-emitting diode including a first electrode; a second electrode facing the first electrode; an emission layer between the first electrode and the second electrode, the emission layer including a host and a dopant; a first hole transport layer between the first electrode and the emission layer; and a... Agent:

20140353612 - Organic light-emitting diode (oled) display and method of manufacturing the same: An organic light-emitting diode (OLED) display is disclosed. In one aspect, the OLED display includes a substrate having a plurality of pixel areas, which serves as a light-emitting area, and a non-pixel area, which serves as a non-light-emitting area. The OLED display also includes a plurality of first electrodes formed... Agent: Samsung Display Co., Ltd.

20140353655 - Organic light-emitting diode lighting apparatus: Disclosed herein is an organic light-emitting diode lighting apparatus. The organic light-emitting diode lighting apparatus may include a transparent substrate main body with a plurality of groove lines formed therein, auxiliary electrodes formed in at least of the plurality of groove lines, a first electrode formed on the substrate main... Agent:

20140353634 - Organic light-emitting display apparatus: An organic light-emitting display apparatus includes a thin film transistor including an active layer, a gate electrode, source and drain electrodes, a first insulating layer between the active layer and the gate electrode, and a second insulating layer between the gate electrode and the source and drain electrodes, a third... Agent:

20140353644 - Organic light-emitting display apparatus: An organic light-emitting display apparatus includes: a thin film transistor including an active layer, a gate electrode, a source electrode, a drain electrode, a first insulating layer, and a second insulating layer; a pad electrode comprising a first pad layer and a second pad layer on the first pad layer;... Agent: Samsung Display Co., Ltd.

20140353595 - Organic light-emitting display apparatus and method for manufacturing the same: An organic light-emitting display apparatus includes an insulating layer including a inclined structure; a first electrode on the insulating layer; a pixel defining layer on the insulating layer and the first electrode, and defining an emissive region and a non-emissive region; a bump on the pixel defining layer; an organic... Agent: Samsung Display Co., Ltd.

20140353599 - Organic light-emitting display apparatus and method of manufacturing the same: An organic light-emitting display apparatus includes a substrate; a thin film transistor (TFT) on the substrate; a pixel-defining layer (PDL) disposed on the TFT and comprising a first area having a first thickness and a second area having a second thickness greater than the first thickness, and a via hole... Agent: Samsung Display Co., Ltd.

20140353609 - Organic light-emitting display apparatus and method of manufacturing the same: Provided is an organic light-emitting display apparatus including a thin-film transistor (TFT) that includes an active layer, a gate electrode, and source/drain electrodes; an organic light-emitting device that includes a pixel electrode which is connected to the TFT, an intermediate layer which includes a light-emitting layer, and an opposite electrode;... Agent: Samsung Display Co., Ltd.

20140353616 - Organic light-emitting display apparatus and method of manufacturing the same: Provided is an organic light-emitting display apparatus. The organic light-emitting display apparatus including: pixels arranged in a display region of a substrate and at intersections between scanning lines and data lines; a first initialization main line arranged along a first side of the display region of the substrate; a second... Agent: Samsung Display Co., Ltd.

20140353619 - Organic light-emitting display apparatus and method of manufacturing the same: An organic light-emitting display apparatus includes a thin film transistor including an active layer, gate, source and drain electrodes, a first insulating layer disposed between the active layer and the gate electrode, and a second insulating layer disposed between the gate electrode and the source and drain electrodes; a pad... Agent:

20140353622 - Organic light-emitting display apparatus and method of manufacturing the same: A display apparatus includes: a thin film transistor including a first insulating layer between the active layer and the gate electrode, and a second insulating layer between the gate electrode and the source and drain electrodes; a pad electrode including a first pad layer and a second pad layer on... Agent: Samsung Display Co., Ltd.

20140353631 - Organic light-emitting display apparatus and method of manufacturing the same: An organic light-emitting display apparatus includes a thin film transistor including a first insulating layer between an active layer and a gate electrode, and a second insulating layer between the gate electrode and source/drain electrodes, a pad electrode including a first pad layer on a same layer as the source/drain... Agent:

20140353606 - Organic light-emitting display device and method of fabricating the same: The present invention relates to an organic light-emitting display device and a method of fabricating the same. The device may include a base substrate, a thin-film transistor disposed on the base substrate, an organic light-emitting device including a first electrode connected to the thin-film transistor, an organic pattern disposed on... Agent: Samsung Display Co., Ltd.

20140353610 - Organic light-emitting display device and method of manufacturing the same: An organic light-emitting display device includes a substrate which includes a plurality of areas, a plurality of first electrodes disposed on the areas of the substrate, respectively, a second electrode disposed on the first electrodes, and a plurality of emitting layers disposed between the first electrodes and the second electrode.... Agent: Samsung Display Co., Ltd.

20140353620 - Organic light-emitting display device and method of manufacturing the same: The organic light emitting display device includes a substrate including a thin film transistor (TFT) formed thereon, the TFT including a first insulating layer disposed between an active layer and a gate electrode, and a second insulating layer disposed between the gate electrode and source and drain electrodes; a pad... Agent:

20140353647 - Organic thin film transistors and method of making them: An organic thin film transistor comprises source and drain electrodes defining a channel between them; a surface-modification layer on at least part of the surface of each of the source and drain electrodes; an organic semiconductor layer extending across the channel and in contact with the surface-modification layers; a gate... Agent: Cambridge Display Technology Limited

20140353630 - Organic white light emitting display apparatus: Disclosed is an organic white light emitting display apparatus. The organic white light emitting device includes a first substrate including a first sub-pixel area, a second sub-pixel area, a third sub-pixel area, and an organic light emitting device (OLED) that includes a first electrode, a second electrode, and an organic... Agent: Samsung Display Co., Ltd.

20140353648 - P-type oxide, composition for producing p-type oxide, method for producing p-type oxide, semiconductor element, display element, image display device, and system: To provide is a p-type oxide, including an oxide, wherein the oxide includes: Cu; and an element M, which is selected from p-block elements, and which can be in an equilibrium state, as being present as an ion, wherein the equilibrium state is a state in which there are both... Agent: Ricoh Company, Ltd.

20140353608 - Pixel and organic light emitting display device using the same: There is provided a pixel, including an organic light emitting diode (OLED), a first transistor whose gate electrode is coupled to a first node, whose first electrode is coupled to a first power supply via a third node, and whose second electrode is coupled to an anode electrode of the... Agent: Samsung Display Co., Ltd.

20140353652 - Polymer comprising an unsymmetric diarylaminofluoren unit: A polymer comprising one or more optionally substituted repeat units of formula (I): (I) wherein each Ar1 independently represents a substituted or unsubstituted aromatic or heteroaromatic group; each Ar2 independently represents a substituted or unsubstituted aromatic or heteroaromatic group; n and m in each occurrence is at least 1; and... Agent:

20140353653 - Process for producing liquid composition for organic semiconductor element: A problem to be solved of the present invention is to provide a liquid composition for an organic semiconductor device having good coating property, wherein the lifetime of the function of an organic semiconductor device is prolonged when an organic layer is formed from the liquid composition for an organic... Agent: Sumitomo Chemical Company, Limited

20140353651 - Semiconductor device, method of manufacturing semiconductor device, solid-state imaging unit, and electronic apparatus: A semiconductor device includes, in order on a substrate, an organic semiconductor layer, an inorganic film, and a protective film. The inorganic film and the protective film each have a peripheral edge portion that is formed in an outer region compared to a peripheral edge portion of the organic semiconductor... Agent:

20140353598 - Substrate for use in manufacturing display device and method for forming element on substrate: A substrate is for use in manufacturing a display device. The substrate includes a first area that corresponds to pixel positions. The substrate further includes a second area adjacent to the first area. The substrate further includes a first mark disposed in the second area, wherein a first virtual line... Agent: Samsung Display Co., Ltd.

20140353605 - Thin film transistor and organic light emitting diode display including the same: A thin film transistor includes a substrate, a semiconductor layer on the substrate, a first insulating layer covering the substrate and the semiconductor layer, a first gate electrode on the first insulating layer and overlapping the semiconductor layer, a second insulating layer covering the first gate electrode and the first... Agent: Samsung Display Co., Ltd.

20140353659 - Back plane for flat panel display device and method of manufacturing the same: A method of manufacturing a flat panel display device includes forming a first gate electrode and a second gate electrode on a substrate. The method includes forming a gate insulating layer on the substrate covering the gate electrodes. The method includes forming a first active layer and a second active... Agent: Samsung Display Co., Ltd.

20140353660 - Flat panel display device with oxide thin film transistor and method of fabricating the same: A flat panel display device with an oxide thin film transistor is disclosed which includes: a buffer film formed on a substrate; an oxide semiconductor layer which has a width of a first length and is formed on the buffer film; a gate insulation film which has a width of... Agent: Lg Display Co., Ltd.

20140353662 - High density nonvolatile memory: One embodiment of a memory cell comprising: a substrate; a first transistor comprising a first gate width and a terminal; a first plurality of resistive memory elements disposed above the first transistor, each resistive memory element comprising an element width, a first end, and a second end; a plurality of... Agent:

20140353658 - Oxide sputtering target, thin film transistor using the same, and method for manufacturing thin film transistor: A thin film transistor includes a gate electrode, a source electrode, a drain electrode disposed on the same layer as the source electrode and facing the source electrode, an oxide semiconductor layer disposed between the gate electrode and the source electrode or the drain electrode, and a gate insulating layer... Agent: Samsung Display Co., Ltd.

20140353663 - Semiconductor device and method for manufacturing the same: A transistor in which the state of an interface between an oxide semiconductor layer and an insulating film in contact with the oxide semiconductor layer is favorable and a method for manufacturing the transistor are provided. Nitrogen is added to the vicinity of the interface between the oxide semiconductor layer... Agent:

20140353661 - Thin film transistor array substrate and method of manufacturing the same: A thin film transistor (TFT) array substrate is disclosed. The TFT array substrate includes a gate line, a first gate electrode branched from the gate line, a gate insulating film formed over the substrate, an active layer formed on the gate insulating film, a data line formed to comprise a... Agent: Lg Display Co., Ltd.

20140353664 - Semiconductor chip, semiconductor apparatus having the same and method of arranging the same: Provided is a semiconductor apparatus in which a plurality of semiconductor chips stacked in a vertical direction. Each of the semiconductor chips comprises: a bank area comprising a plurality of banks configured to store data; and a peripheral area including a pad area in which a plurality of pads configured... Agent: Sk Hynix Inc.

20140353665 - Semiconductor device and manufacturing method thereof: A semiconductor device includes: a semiconductor substrate; a first insulating film on a surface of the semiconductor substrate; a temperature sensing diode on the first insulating film; a trench extending inward from the surface of the semiconductor substrate; and a trench electrode embedded in the trench via a second insulating... Agent: Mitsubishi Electric Corporation

20140353666 - Flat panel display device and method for manufacturing flat panel display: A flat panel display device includes a pixel circuit provided on a substrate, a pixel wiring, an inspection pad connected to the pixel circuit through the pixel wiring, a main wiring separated from the inspection pad by a gap, and a common electrode covering substantially the entire substrate and electrically... Agent: Samsung Display Co., Ltd.

20140353667 - Semiconductor device and manufacturing method therefor: A field-effect semiconductor device having a semiconductor body with a main surface is provided. The semiconductor body includes, in a vertical cross-section substantially orthogonal to the main surface, a drift layer of a first conductivity type, a semiconductor mesa of the first conductivity type adjoining the drift layer, substantially extending... Agent:

20140353668 - Anti-colorcast display panel: An anti-colorcast display panel is provided, comprising horizontal scanning lines and vertical data lines. It further includes sub-pixels disposed between adjacent scanning lines and adjacent data lines and arranged in a form of array. Every m×n sub-pixels form a pixel unit. Each sub-pixel includes a transistor whose gate is connected... Agent:

20140353672 - Array substrate, method for fabricating the same and display device: An array substrate, a method for fabricating the same and a display device are disclosed. The array substrate comprises a plurality of gate lines and a plurality of data lines which intersect each other to define a plurality of pixel regions, each of the pixel regions comprises a thin film... Agent: Boe Technology Group Co., Ltd.

20140353671 - Display device and manufacturing method thereof: A display device may include a display area for displaying an image. The display device may further include a peripheral area that surrounds the display area. The display device may further include a pixel disposed in the display area. The display device may further include a bus line disposed in... Agent: Samsung Display Co., Ltd.

20140353669 - Flat panel display apparatus and method for manufacturing the flat panel display apparatus: A display apparatus includes an active layer that overlaps a substrate and comprises a channel region. The display apparatus further includes an insulating layer disposed on the substrate and the active layer. The display apparatus further includes a gate electrode disposed on the insulating layer, overlapping the channel region, and... Agent: Samsung Display Co., Ltd.

20140353670 - Flexible display device and method for manufacturing the same: Discussed is a flexible display device to reduce a width of a bezel. The flexible display device includes a substrate being formed of a flexible material, a plurality of gate lines and a plurality of data lines crossing each other, a plurality of pads formed in a pad area of... Agent: Lg Display Co., Ltd.

20140353681 - Compound semiconductor device: The compound semiconductor device comprises an i-GaN buffer layer 12 formed on an SiC substrate 10; an n-AlGaN electron supplying layer 16 formed on the i-GaN buffer layer 12; an n-GaN cap layer 18 formed on the n-AlGaN electron supplying layer 16; a source electrode 20 and a drain electrode... Agent:

20140353675 - Electrode, mis semiconductor device and manufacturing method of electrode: An electrode used in contact with an insulator comprises a layer mainly consisting of aluminum (Al) and a titanium nitride (TiN) layer that is placed between the layer mainly consisting of aluminum (Al) and the insulator and is arranged in contact with the layer mainly consisting of aluminum (Al). A... Agent: Toyoda Gosei Co., Ltd.

20140353680 - Gallium nitride semiconductor structures with compositionally-graded transition layer: The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in... Agent: International Rectifier Corporation

20140353676 - Light emitting chip: A light emitting chip includes a device chip having a light emitting layer on a front surface side and a transparent member bonded to a back surface side of the device chip. The transparent member is transmissive to light emitted from the light emitting layer. The transparent member is formed... Agent: Disco Corporation

20140353677 - Low-defect semiconductor device and method of manufacturing the same: Provided are a low-defect semiconductor device and a method of manufacturing the same. The method includes forming a buffer layer on a silicon substrate, forming an interface control layer on the buffer layer under a first growth condition, and forming a nitride stack on the interface control layer under a... Agent: Samsung Electronics Co., Ltd.

20140353673 - Semiconductor apparatus: A semiconductor apparatus includes a substrate; a first semiconductor layer formed on the substrate and formed of a nitride semiconductor; a second semiconductor layer formed on the first semiconductor layer and formed of a nitride semiconductor; first and second gate electrodes, a source electrode, and a drain electrode formed on... Agent:

20140353674 - Semiconductor device: A semiconductor device includes a substrate, a buffer layer of GaN containing at least one of Fe and C and disposed on the substrate, a channel layer of GaN disposed on the buffer layer and through which electrons travel, an electron supply layer disposed on the channel layer and producing... Agent: Mitsubishi Electric Corporation

20140353678 - Semiconductor device and method for manufacturing same: A semiconductor device includes an active region formed in an upper layer portion of a semiconductor layer of a first conductivity type, and a plurality of electric field relaxation layers disposed from an edge of the active region toward the outside so as to surround the active region. The plurality... Agent: Mitsubishi Electric Corporation

20140353679 - Semiconductor device and method of fabricating the same: Disclosed are a semiconductor device and a method of fabricating the same. A light emitting diode (LED) includes a conductive substrate, and a gallium nitride (GaN)-based semiconductor stack positioned on the conductive substrate. The semiconductor stack includes an active layer that is a semi-polar semiconductor layer. Accordingly, it is possible... Agent:

20140353685 - Semi-polar iii-nitride films and materials and method for making the same: A method has been developed to overcome deficiencies in the prior art in the properties and fabrication of semi-polar group III-nitride templates, films, and materials. A novel variant of hydride vapor phase epitaxy has been developed that provides for controlled growth of nanometer-scale periodic structures. The growth method has been... Agent:

20140353686 - Semiconductor device: A semiconductor device having a low feedback capacitance and a low switching loss. The semiconductor device includes: a substrate; a drift layer formed on a surface of the semiconductor substrate; a plurality of first well regions formed on a surface of the drift layer; a source region which is an... Agent: Mitsubishi Electric Corporation

20140353683 - Semiconductor device and method of manufacturing the same: In a semiconductor substrate preparation step, a semiconductor substrate which is made of SiC and in which a first semiconductor region of a first conductivity type is formed is prepared. In a second semiconductor region forming step, a second semiconductor region is formed by implanting an impurity of a second... Agent: Denso Corporation

20140353684 - Silicon carbide epitaxial wafer and method for fabricating the same: A method for fabricating a silicon carbide epitaxial wafer according to the embodiment includes introducing a carbon source and a silicon source into a reactor in which a silicon carbide wafer is provided; heating the reactor; and adjusting an amount of the silicon source or the carbon source introduced into... Agent: Lg Innotek Co., Ld.

20140353682 - Wide band gap semiconductor wafers grown and processed in a microgravity environment and method of production: Wide band gap semiconductor wafers with previously unattainable characteristics and the method of processing and producing the same are disclosed and claimed herein. Specifically, the application discloses and claims a method to process silicon carbide and other similar wide band gap semiconductors in a microgravity environment. The wafers are placed... Agent: Masterson Industries, LLC

20140353687 - Led module and image sensor module: An LED module includes first through third LED chips and two Zener diodes for preventing excessive voltage application to the first and the second LED chips. A first lead includes a mount portion on which the first through third LED chips and the two Zener diodes are mounted. A resin... Agent:

20140353690 - Array substrate and manufacturing method thereof, and display device: An array substrate, a manufacturing method thereof, and a display device are provided. The array substrate comprise a base substrate (11), a gate line, a data line, and a pixel region defined by intersection of the gate line and the data line, which are formed on the base substrate (11),... Agent: Boe Technology Group Co., Ltd.

20140353691 - In-cell oled touch display panel structure with metal layer for sensing: An in-cell OLED touch display panel structure with metal layer for sensing includes an upper substrate, a lower substrate parallel to the upper substrate, an OLED layer configured between the upper and lower substrates, a black matrix layer, a sensing electrode layer, and a thin film transistor layer. The black... Agent:

20140353692 - Light emitting diode and method of fabricating the same: A light emitting diode includes light emitting cells disposed on a substrate and interconnections connecting the light emitting cells to each other. Each of the light emitting cells includes a first semiconductor layer, a second semiconductor layer, an active layer disposed between the first semiconductor layer and the second semiconductor... Agent:

20140353688 - Light source device adapted to a direct-type backlight module and display device therewith: A light source device includes a frame, at least one light emitting chip, a light transferring layer and a lens layer. The at least one light emitting chip is disposed within the frame for emitting light. The light transferring layer covers the at least one light emitting chip and combines... Agent:

20140353689 - Thin film transistor and manufacturing method thereof and display comprising the same: Provided is a TFT with an improved gate insulator, having an insulator substrate, a gate layer, a gate insulator layer, a active semiconductor layer, and a source and drain electrode layer, wherein the gate insulator layer includes a first silicon nitride film, a second silicon nitride film disposed on the... Agent: Everdisplay Optronics (shanghai) Limited

20140353693 - Display panel driven by electrode wires: A display panel is provided. The present display panel includes a substrate, a plurality of first electrode wires, a plurality of second electrode wires and a plurality of light-emitting layers, wherein the first electrode wires are disposed on the substrate; the second electrode lines are cross with the first electrode... Agent: J Touch Corporation

20140353697 - Led module and led dot matrix display: An LED module A1 includes LED chips 3R, 3G, 3B, and a module substrate 1 on which the LED chips 3R, 3G, 3B are mounted. A wire 4R is connected to the LED chip 3R, and the LED chips 3G and 3B are arranged to face each other across the... Agent:

20140353695 - Light emitting device package and lighting apparatus using the same: Disclosed is a light emitting device, and more particularly are a light emitting device package configured to improve the quality of light and a lighting apparatus using the same. The light emitting device package includes a light emitting device located on a package main body, the light emitting device including... Agent:

20140353694 - Multiple pixel surface mount device package: Emitter packages and LEDs displays utilizing the packages are disclosed, with the packages providing advantages such as reducing the cost and interconnect complexity for the packages and displays. One emitter package comprises a casing with a plurality of cavities, each cavity having at least one LED. A lead frame structure... Agent:

20140353696 - Solid state lighting device: A solid state lighting device includes a first solid state light-emitting element configured to emit first light having a first light emission spectrum having width smaller than 5 nm in a visible light wavelength region; a second solid state light-emitting element configured to emit second light having a second light... Agent: Toshiba Lighting & Technology Corporation

20140353698 - Heterojunction light emitting diode: A method for forming a light emitting device includes forming a monocrystalline III-V emissive layer on a monocrystalline substrate and forming a first doped layer on the emissive layer. A first contact is deposited on the first doped layer. The monocrystalline substrate is removed from the emissive layer by a... Agent:

20140353699 - Nitride semiconductor light-emitting diode: Provided is a nitride semiconductor light-emitting diode having a higher light extraction efficiency and a higher polarization degree. A nitride semiconductor light-emitting diode according to the present invention comprises an active layer generating a polarized light, a first side surface, a second side surface, a third side surface, and a... Agent: Panasonic Corporation

20140353700 - Heterojunction light emitting diode: A method for forming a light emitting device includes forming a monocrystalline III-V emissive layer on a monocrystalline substrate and forming a first doped layer on the emissive layer. A first contact is deposited on the first doped layer. The monocrystalline substrate is removed from the emissive layer by a... Agent: International Business Machines Corporation

20140353703 - Light emitting device package: Disclosed is a light emitting device package including a body including a recess, first and second electrodes disposed on the body, a light emitting device provided on the first electrode, and a molding part disposed on the light emitting device. At least one of the body and the molding part... Agent: Lg Innotek Co., Ltd.

20140353701 - Light source package and method of manufacturing the same: A package for a light source is disclosed. In particular, a Plastic Leaded Chip Carrier (PLCC) is described which provides enhanced heat dissipating properties. Moreover, the PLCC is described as comprising a single-gage leadframe, which provides for enhanced design flexibility and reduced manufacturing costs. Methods of manufacturing light source packages... Agent:

20140353704 - Semiconductor light emitting device: A semiconductor light emitting device includes: a semiconductor light emitting element including a transparent substrate; a reflective substrate on which the semiconductor light emitting element is mounted; an adhesive layer containing a fluorescent substance, for fixing the semiconductor light emitting element on the reflective substrate; and a sealing member containing... Agent: Sharp Kabushiki Kaisha

20140353705 - Semiconductor light emitting element, method of manufacturing semiconductor light emitting element, semiconductor light emitting device and substrate: A semiconductor light emitting element includes a transparent substrate that transmits light emitted from said semiconductor light emitting element and a multi-layered structure formed on the transparent substrate. The multi-layered structure includes a semiconductor multi-layered film consisting of an n-type layer, an MQW light emitting layer and a p-type layer.... Agent: Sharp Kabushiki Kaisha

20140353706 - Silver surface treatment agent, and light-emitting device: The silver surface treatment agent of the present invention contains a layered silicate compound. The light-emitting device of the present invention comprises a substrate having a silver-plated layer; a light-emitting diode mounted on the substrate; and a film, provided on a surface of the silver-plated layer, containing a layered silicate... Agent:

20140353707 - Transparent light emitting diodes: A transparent light emitting diode (LED) includes a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers... Agent: The Regents Of The University Of California

20140353708 - Wafer-level light emitting diode package and method of fabricating the same: A light emitting diode (LED) package includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first and second semiconductor layers, the first and second semiconductor layers having different conductivity types, a first contact layer disposed on the first semiconductor... Agent:

20140353702 - Wavelength conversion element, light emitting device including wavelength conversion element, and vehicle including light emitting device: A wavelength conversion element includes a phosphor layer including phosphor particles configured to be excited by light from a light source and a matrix located among the phosphor particles; and a column-shaped structural body including at least two kinds of column-shaped bodies periodically arranged and in contact with the phosphor... Agent: Panasonic Corporation

20140353709 - Light emitting diode: Embodiments of the invention provide a gallium nitride-based light emitting diode including a transparent electrode, which includes a metal layer and a metal oxide layer. The light emitting diode includes a substrate, an n-type gallium nitride-based semiconductor layer disposed on the substrate, a p-type gallium nitride-based semiconductor layer disposed on... Agent: Postech Academy-industry Foundation

20140353710 - Method for producing optoelectronic semiconductor components, leadframe assemblage and optoelectronic semiconductor component: A method serves to produce optoelectronic semiconductor components. A leadframe assemblage includes a number of leadframes. The leadframes each comprise at least two leadframe parts and are connected together at least in part via connecting webs. Electrical connections are attached between neighboring leadframes. A potting body connects the leadframes and... Agent: Osram Opto Semiconductors Gmbh

20140353711 - Optical semiconductor lighting apparatus: An optical semiconductor lighting apparatus includes a housing including a groove, a light-emitting module disposed in the housing, the light-emitting module including a semiconductor optical device, a sealing body disposed in the groove, the sealing body including a main portion and a first rib extending from the main portion, and... Agent:

20140353712 - Nanopillar optical resonator: Embodiments of a monolithically integrated optical resonator are disclosed. In one embodiment, the optical resonator is a nanopillar optical resonator that is formed directly on a substrate and promotes a helically-propagating cavity mode. The helically-propagating cavity mode results in significant reflection or, in some embodiments, total internal reflection at an... Agent: The Regents Of The University Of California

20140353713 - Semiconductor device and method for fabricating the same: A semiconductor device includes a substrate, a first insulation layer formed on the substrate in a first region, a photon absorption seed layer formed on the first insulation layer in the first region and on the substrate in a second region separate from the first region, and a photon absorption... Agent:

20140353715 - Finfet device and fabrication method thereof: A transistor device may include a substrate that has a well portion. The transistor device may further include a source member and a drain member. The transistor device may further include a fin bar. The fin bar may be formed of a first semiconductor material, may be disposed between the... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20140353714 - Methods for making a semiconductor device with shaped source and drain recesses and related devices: A method for making a semiconductor device includes forming at least one gate stack on a layer comprising a first semiconductor material and etching source and drain recesses adjacent the at least one gate stack. The method further includes shaping the source and drain recesses to have a vertical side... Agent:

20140353721 - Bulk finfet with controlled fin height and high-k liner: A method of forming a semiconductor device that includes forming a material stack on a semiconductor substrate, the material stack including a first dielectric layer on the substrate, a second dielectric layer on the first dielectric layer, and a third dielectric layer on the second dielectric layer, wherein the second... Agent:

20140353716 - Method of making a semiconductor device using a dummy gate: A method of making a semiconductor device includes forming a fin mask layer on a semiconductor layer, forming a dummy gate over the fin mask layer, and forming source and drain regions on opposite sides of the dummy gate. The dummy gate is removed and the underlying fin mask layer... Agent:

20140353720 - Semiconductor device and method of manufacturing semiconductor device: To provide a semiconductor device having improved characteristics. The semiconductor device has a substrate and thereon a buffer layer, a channel layer, a barrier layer, a trench penetrating therethrough and reaching the inside of the channel layer, a gate electrode placed in the trench via a gate insulating film, and... Agent: Renesas Electronics Corporation

20140353719 - Semiconductor devices and fabricating methods thereof: Provided are semiconductor devices and fabricating methods thereof. The semiconductor device includes a field insulating layer formed in a substrate, an interlayer dielectric layer formed on the field insulating layer and including a trench exposing at least a portion of the field insulating layer, a deposition insulating layer formed in... Agent:

20140353717 - Silicon-on-nothing transistor semiconductor structure with channel epitaxial silicon region: An improved transistor with channel epitaxial silicon. In one aspect, a method of fabrication includes: forming a gate stack structure on an epitaxial silicon region disposed on a substrate, a width dimension of the epitaxial silicon region approximating a width dimension of the gate stack structure; and growing a raised... Agent: Stmicroelectronics, Inc.

20140353718 - Silicon-on-nothing transistor semiconductor structure with channel epitaxial silicon-germanium region: An improved transistor with channel epitaxial silicon and methods for fabrication thereof. In one aspect, a method for fabricating a transistor includes: forming a gate stack structure on an epitaxial silicon region, a width dimension of the epitaxial silicon region approximating a width dimension of the gate stack structure; encapsulating... Agent: Stmicroelectronics, Inc.

20140353722 - Graphene capped hemt device: A graphene capped HEMT device and a method of fabricating same are disclosed. The graphene capped HEMT device includes one or more graphene caps that enhance device performance and/or reliability of an exemplary AlGaN/GaN heterostructure transistor used in high-frequency, high-energy applications, e.g., wireless telecommunications. The HEMT device disclosed makes use... Agent:

20140353723 - High voltage durability iii-nitride device: A high voltage durability III-nitride semiconductor device comprises a support substrate including a first silicon body, an insulator body over the first silicon body, and a second silicon body over the insulator body. The high voltage durability III-nitride semiconductor device further comprises a III-nitride semiconductor body characterized by a majority... Agent: International Rectifier Corporation

20140353724 - Semiconductor device and method of manufacturing the same: A semiconductor device includes: a semiconductor substrate having an upper surface and a lower surface; a field effect transistor having a semiconductor layer on the upper surface of the semiconductor substrate, a gate electrode, a drain electrode, and a source electrode; a P-type diffusion region in the semiconductor substrate and... Agent: Mitsubishi Electric Corporation

20140353726 - Lateral bipolar transistors having partially-depleted intrinsic base: A bipolar junction transistor (BJT) and method for fabricating such. The transistor includes an emitter region, a collector region, and an intrinsic-base region. The intrinsic-base region is positioned between the emitter region and the collector region. Furthermore, the physical separation between the emitter region and the collector region is less... Agent: International Business Machines Corporation

20140353725 - Semiconductor device and method of forming the device by forming monocrystalline semiconductor layers on a dielectric layer over isolation regions: Disclosed are devices and methods of forming the devices wherein pair(s) of first openings are formed through a dielectric layer and a first semiconductor layer into a substrate and, within the substrate, the first openings of each pair are expanded laterally and merged to form a corresponding trench. Dielectric material... Agent: International Business Machines Corporation

20140353727 - I/o cell esd system: An integrated circuit including an ESD network including a portion located in ESD subareas of a plurality of I/O cells where the ESD subareas are arranged in a row traversing the plurality of I/O cells. The ESD network includes ESD clamp cells and ESD trigger circuit cells wherein a portion... Agent:

20140353736 - Field-effect transistor: A field-effect transistor includes a plurality of unit elements, an insulating film, and a wiring. The plurality of unit elements include a semiconductor layer having a first surface, a plurality of drain electrodes, gate electrodes, and a source electrode. The source electrode is electrically continuously provided across the plurality of... Agent: Nichia Corporation

20140353732 - Halo region formation by epitaxial growth: A semiconductor device and method for manufacturing the same, wherein the method includes fabrication of field effect transistors (FET). The method includes growing a doped epitaxial halo region in a plurality of sigma-shaped source and drain recesses within a semiconductor substrate. An epitaxial stressor material is grown within the sigma-shaped... Agent:

20140353735 - Localized fin width scaling using a hydrogen anneal: Transistors and methods for fabricating the same include forming one or more semiconductor fins on a substrate; covering source and drain regions of the one or more semiconductor fins with a protective layer; annealing uncovered channel portions of the one or more semiconductor fins in a gaseous environment to reduce... Agent:

20140353730 - Low gate-to-drain capacitance fully merged finfet: A low gate-to-drain capacitance merged finFET and methods of manufacture are disclosed. The method includes forming a plurality of fins on a substrate. The method further includes forming at least one dummy gate structure intersecting the plurality of fins. The method further includes forming a gap between sidewalls of the... Agent:

20140353728 - Method and apparatus for a reduced capacitance middle-of-the-line (mol) nitride stack: A method of capacitance reduction in a middle-of-the-line (MOL) nitride stack and a resulting device are disclosed. Embodiments include forming an oxide layer between one or more semiconductor devices on a wafer, the one or more semiconductor devices having source/drain junctions therebetween, forming a nitride layer over the one or... Agent: Globalfoundries Inc.

20140353733 - Protection of the gate stack encapsulation: Semiconductor device structures at advanced technologies are provided, wherein a reliable encapsulation of a gate dielectric is already formed during very early stages of fabrication. In illustrative embodiments, a gate stack is formed over a surface of a semiconductor substrate and a sidewall spacer is formed adjacent to the gate... Agent:

20140353734 - Semiconductor devices and methods of fabrication with reduced gate and contact resistances: Semiconductor structures with reduced gate and/or contact resistances and fabrication methods are provided. The method includes: providing a semiconductor device, which includes forming a transistor of the semiconductor device, where the transistor forming includes: forming a T-shaped gate for the transistor, the T-shaped gate being T-shaped in elevational cross-section; and... Agent: Globalfoundries Inc.

20140353729 - Semiconductor structure and method for forming the same: A semiconductor structure and a method for forming the same are provided. The method comprises following steps. A gate material film is formed on a substrate in a first device region and a second device region. The gate material film in the first device region is patterned to form a... Agent: United Microelectronics Corp.

20140353731 - Tuning strain in semiconductor devices: A Fin Field-Effect Transistor (FinFET) includes a semiconductor layer over a substrate, wherein the semiconductor layer forms a channel of the FinFET. A first silicon germanium oxide layer is over the substrate, wherein the first silicon germanium oxide layer has a first germanium percentage. A second silicon germanium oxide layer... Agent:

20140353737 - Semiconductor device and method for manufacturing semiconductor device: A semiconductor device of the present invention includes a semiconductor substrate, stripe-shaped trenches for separating the semiconductor substrate into a plurality of active regions, a buried film having a projecting portion that projects from the semiconductor substrate, buried into the trenches, a source region and drain region of a second... Agent: Rohm Co., Ltd.

20140353738 - Floating gate ultrahigh density vertical nand flash memory and method of making thereof: A method of making a monolithic three dimensional NAND string including providing a stack of alternating first material layers and second material layers over a substrate. The first material layers comprise an insulating material and the second material layers comprise sacrificial layers. The method also includes forming a back side... Agent:

20140353739 - Semiconductor device and fabrication method thereof: A semiconductor device including a first gate structure and a second gate structure immediately adjacent to each other with a spacer therebetween. Line width of the top of the second gate structure is not less than that of the bottom thereof. A fabrication method thereof is also disclosed. A transient... Agent:

20140353740 - Semiconductor device and manufacturing method thereof: Improvements are achieved in the characteristics of a semiconductor device having a nonvolatile memory (MONOS). In a SOI substrate having a supporting substrate, an insulating layer formed thereover, and a silicon layer formed thereover, the MONOS is formed. The MONOS has a control gate electrode and a memory gate electrode... Agent: Renesas Electronics Corporation

20140353741 - Bottled epitaxy in source and drain regions of fets: A method for fabricating enhanced-mobility pFET devices having channel lengths below 50 nm. Gates for pFETs may be patterned in dense arrays on a semiconductor substrate that includes shallow trench isolation (STI) structures. Partially-enclosed voids in the semiconductor substrate may be formed at source and drain regions for the gates,... Agent:

20140353742 - Semiconductor device and method for producing the same: A power semiconductor device comprises a first substrate that is highly doped with a first dopant type, the first substrate having a front face and a back face, the back face forming a backside of the device, a vertical p-type FET and a vertical n-type FET provided laterally adjacent to... Agent:

20140353744 - Semiconductor device: A semiconductor device includes a substrate including a first active region and second active regions, a bit line structure in contact the first active region, and storage node contacts in contact the second active regions. A top surface of the first active region is lower than the top surfaces of... Agent: Sk Hynix Inc.

20140353743 - Semiconductor device and method for fabricating the same: A semiconductor device includes a substrate having an element isolation region, a trench formed on the element isolation region, a gate electrode buried in the trench, and a plurality of active regions formed on both ends of the gate electrode, wherein a pin is formed under the gate electrode between... Agent: Sk Hynix Inc.

20140353746 - Semiconductor device and method for manufacturing semiconductor device: A semiconductor device of the present invention includes a semiconductor layer, a source region and a drain region formed in a surface of the semiconductor layer, both having a first conductivity type, a plurality of gate trenches each formed so as to extend across the source region and the drain... Agent: Rohm Co., Ltd.

20140353745 - Semiconductor device having vertical channel: A vertical-channel semiconductor device includes an active pillar including a channel region, a gate located at a sidewall of the active pillar, a buried bit-line formed below the active pillar, and an insulation film formed below the buried bit-line. Some parts of the buried bit-line are replaced with an insulation... Agent: Sk Hynix Inc.

20140353748 - Field effect transistor, termination structure and associated method for manufacturing: A field effect transistor (“FET”), a termination structure and associated method for manufacturing. The FET has a plurality of active transistor cells and a termination structure. The termination structure for the FET includes a plurality of termination cells arranged substantially in parallel from an inner side toward an outer side... Agent: Chengdu Monolithic Power Systems, Inc.

20140353747 - Trench gate mosfet and method of forming the same: A trench gate MOSFET is provided. An N-type epitaxial layer is disposed on an N-type substrate. An N-type source region is disposed in the N-type epitaxial layer. The N-type epitaxial layer has at least one trench therein. An insulating layer serving as a gate insulating layer is disposed in the... Agent: Beyond Innovation Technology Co., Ltd.

20140353749 - Semiconductor power device and method of fabricating the same: A semiconductor power device and a method of fabricating the same are provided. The semiconductor power device involving: a first conductivity type semiconductor substrate; an epitaxial layer formed on the semiconductor substrate; a second conductivity type well formed in the semiconductor substrate and the epitaxial layer; a drain region formed... Agent: Magnachip Semiconductor, Ltd.

20140353755 - Field effect transistor structure and method of forming same: The disclosure relates generally to a metal-oxide-semiconductor field effect transistor (MOSFET) structures and methods of forming the same. The MOSFET structure includes at least one semiconductor body on a substrate; a dielectric cap on a top surface of the at least one semiconductor body, wherein a width of the at... Agent:

20140353753 - Fin field effect transistor device with reduced overlap capacitance and enhanced mechanical stability: Improved fin field effect transistor (FinFET) devices and methods for fabrication thereof. In one aspect, a method for fabricating a FinFET device comprises: a silicon substrate on which a silicon epitaxial layer is grown is provided. Sacrificial structures on the substrate are formed from the epitaxial layer. A blanket silicon... Agent: Stmicroelectronics, Inc.

20140353751 - Local interconnects by metal-iii-v alloy wiring in semi-insulating iii-v substrates: A structure and method of producing a semiconductor structure including a semi-insulating semiconductor layer, a plurality of isolated devices formed over the semi-insulating semiconductor layer, and a metal-semiconductor alloy region formed in the semi-insulating semiconductor layer, where the metal-semiconductor alloy region electrically connects two or more of the isolated devices.... Agent: International Business Machines Corporation

20140353752 - Multi-height finfets with coplanar topography background: A semiconductor structure is provided that has semiconductor fins having variable heights without any undue topography. The semiconductor structure includes a semiconductor substrate having a first semiconductor surface and a second semiconductor surface, wherein the first semiconductor surface is vertically offset and located above the second semiconductor surface. An oxide... Agent:

20140353750 - Self-aligned bottom-gated graphene devices: A carbon-based semiconductor structure includes a substrate and a gate stack. The gate stack includes a carbon-based gate electrode formed on the substrate. The gate stack also includes a gate dielectric formed on the carbon-based gate electrode. The gate stack further includes a carbon-based channel formed on the gate dielectric.... Agent: International Business Machines Corporation

20140353754 - Self-aligned bottom-gated graphene devices: A carbon-based semiconductor structure includes a substrate and a gate stack. The gate stack includes a carbon-based gate electrode formed on the substrate. The gate stack also includes a gate dielectric formed on the carbon-based gate electrode. The gate stack further includes a carbon-based channel formed on the gate dielectric.... Agent: International Business Machines Corporation

20140353756 - Semiconductor device and method of manufacturing the same: A semiconductor device using an SOI (Silicon On Insulator) substrate, capable of preventing malfunction of MISFETs (Metal Insulator Semiconductor Field Effect Transistor) and thus improving the reliability of the semiconductor device. Moreover, the parasitic resistance of the MISFETs is reduced, and the performance of the semiconductor device is improved. An... Agent: Renesas Electronics Corporation

20140353757 - Integrated circuits and methods of design and manufacture thereof: Integrated circuits and methods of manufacture and design thereof are disclosed. For example, a method of manufacturing includes using a first mask to pattern a gate material forming a plurality of first and second features. The first features form gate electrodes of the semiconductor devices, whereas the second features are... Agent:

20140353758 - Semiconductor device: A semiconductor device, in which an integrated circuit portion and an antenna are easily connected, can surely transmit and receive a signal to and from a communication device. The integrated circuit portion is formed of a thin film transistor over a surface of a substrate so that the area occupied... Agent:

20140353760 - Method to co-integrate sige and si channels for finfet devices: A method for co-integrating finFETs of two semiconductor material types, e.g., Si and SiGe, on a bulk substrate is described. Fins for finFETs may be formed in an epitaxial layer of a first semiconductor type, and covered with an insulator. A portion of the fins may be removed to form... Agent:

20140353759 - Self-aligned gate electrode diffusion barriers: A self-aligned diffusion barrier may be formed by forming a first masking layer, having a vertical sidewall on a semiconductor layer, above a first portion of the semiconductor layer. A first spacer layer, including a spacer region on the vertical sidewall, may be formed above the semiconductor layer. A second... Agent: International Business Machines Corporation

20140353764 - Layout to minimize fet variation in small dimension photolithography: A semiconductor chip has shapes on a particular level that are small enough to require a first mask and a second mask, the first mask and the second mask used in separate exposures during processing. A circuit on the semiconductor chip requires close tracking between a first and a second... Agent:

20140353761 - Multi-orientation semiconductor devices employing directed self-assembly: A template material layer is deposited over a substrate, and is patterned with at least two trenches having different lengthwise directions. An array of polymer lines are formed by directed self-assembly of a copolymer material and a selective removal of one type of polymer material relative to another type within... Agent:

20140353762 - Multi-orientation semiconductor devices employing directed self-assembly: A template material layer is deposited over a substrate, and is patterned with at least two trenches having different lengthwise directions. An array of polymer lines are formed by directed self-assembly of a copolymer material and a selective removal of one type of polymer material relative to another type within... Agent: International Business Machines Corporation

20140353763 - Semiconductor devices including fin-fets and methods of fabricating the same: Semiconductor devices including fin-FETs and methods of forming the semiconductor devices are provided. The semiconductor devices may include a fin structure including a long side and a short side on a substrate, a first trench including a sidewall defined by the long side of the fin structure and a first... Agent: Samsung Electronics Co., Ltd.

20140353765 - Double sidewall image transfer process: Methodology enabling a generation of fins having a variable fin pitch less than 40 nm, and the resulting device are disclosed. Embodiments include: forming a hardmask on a substrate; providing first and second mandrels on the hardmask; providing a first spacer on each side of each of the first and... Agent:

20140353768 - Gate electrode and gate contact plug layouts for integrated circuit field effect transistors: A four transistor layout can include an isolation region that defines an active region, the active region extending along first and second different directions. A common source region of the four transistors extends from a center of the active region along both the first and second directions to define four... Agent:

20140353767 - Method for the formation of fin structures for finfet devices: On a first semiconductor material substrate, an overlying sacrificial layer formed of a second semiconductor material is deposited. In a first region, a first semiconductor material region is formed over the sacrificial layer. In a second region, a second semiconductor material region is formed over the sacrificial layer. The first... Agent:

20140353769 - Semiconductor devices including protruding insulation portions between active fins: A semiconductor device can include a field insulation layer including a planar major surface extending in first and second orthogonal directions and a protruding portion that protrudes a particular distance from the major surface relative to the first and second orthogonal directions. First and second multi-channel active fins can extend... Agent:

20140353766 - Small footprint semiconductor package: A semiconductor assembly includes a substrate with electrically conductive regions and a semiconductor package. The semiconductor package includes a semiconductor die, first and second terminals, and a mold compound. The die has opposing first and second main surfaces, an edge disposed perpendicular to the first and second main surfaces, a... Agent:

20140353770 - Semiconductor device and method for fabricating the same: First sidewalls are provided on side surfaces of a gate electrode and on regions of a semiconductor substrate which are located on lateral sides of the gate electrode, second sidewalls are provided on the first sidewalls and each second sidewall has a height and a width respectively smaller than a... Agent:

20140353771 - Semiconductor dielectric interface and gate stack: A semiconductor/dielectric interface having reduced interface trap density and a method of manufacturing the interface are disclosed. In an exemplary embodiment, the method of forming a semiconductor device includes receiving a substrate and forming a termination layer on a top surface of the substrate. The termination layer includes at least... Agent:

20140353778 - Capacitive pressure sensing semiconductor device: A capacitive pressure sensing semiconductor device is provided, which has pressure resistance against pressure applied by a pressing member and can detect the pressure surely and efficiently. The pressure sensing semiconductor device includes a pressure detecting part, which detects pressure as a change in capacitance, and a package that receives... Agent:

20140353777 - Electrical device including a functional element in a cavity: A substrate includes a functional element. An insulating first film forms a cavity which stores the functional element, together with the substrate, and includes a plurality of through-holes. An insulating second film covers the plurality of through-holes, is formed on the first film, and has a gas permeability which is... Agent: Kabushiki Kaisha Toshiba

20140353776 - Mems structure with adaptable inter-substrate bond: A MEMS structure incorporating multiple joined substrates and a method for forming the MEMS structure are disclosed. An exemplary MEMS structure includes a first substrate having a bottom surface and a second substrate having a top surface substantially parallel to the bottom surface of the first substrate. The bottom surface... Agent:

20140353773 - Method for forming a suspended membrane: The present disclosure is directed to a device that includes a substrate and a sensor formed on the substrate. The sensor includes a chamber formed from a plurality of integrated cavities, a membrane above the substrate, the membrane having a plurality of openings, each opening positioned above one of the... Agent:

20140353774 - Methods for stiction reduction in mems sensors: A method of the invention includes reducing stiction of a MEMS device by providing a conductive path for electric charge collected on a bump stop formed on a substrate. The bump stop is formed by depositing and patterning a dielectric material on the substrate, and the conductive path is provided... Agent:

20140353772 - Microelectronic packages including patterned die attach material and methods for the fabrication thereof: Embodiments of microelectronic packages and methods for fabricating microelectronic packages are provided. In one embodiment, the fabrication method includes printing a patterned die attach material onto the backside of a wafer including an array of non-singulated microelectronic die each having an interior keep-out area, such as a central keep-out area.... Agent:

20140353775 - Wafer-level packaging of integrated devices, and manufacturing method thereof: A wafer-level packaging, comprising: a first semiconductor body integrating a MEMS structure; a second semiconductor body, including a surface electrical-contact region and an ASIC coupled to the MEMS structure and to said electrical-contact region; a first coating layer, made of resin, which englobes and protects the first body, the second... Agent: Stmicroelectronics (malta) Ltd

20140353780 - Detection structure for a mems acoustic transducer with improved robustness to deformation: A micromechanical structure for a MEMS capacitive acoustic transducer, has: a substrate of semiconductor material; a rigid electrode, at least in part of conductive material, coupled to the substrate; a membrane, at least in part of conductive material, facing the rigid electrode and coupled to the substrate, which undergoes deformation... Agent: Stmicroelectronics S.r.l.

20140353779 - Mems microphone and electronic equipment having the mems microphone: The present invention provides a MEMS microphone and an electronic equipment having the MEMS microphone. The electronic equipment of the present invention at least comprises: a MEMS microphone and a printed circuit board, wherein, the microphone comprises: a microphone chip containing acoustic and electric sensor, a package shell packaging the... Agent: Shanghai Sniper Microelectronics Co., Ltd.

20140353784 - Magnetic memory device: A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the first vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of... Agent:

20140353783 - Magnetic memory devices: Magnetic memory devices include a magnetic tunnel junction including a free layer, a pinned layer, and a tunnel barrier layer between the free layer and the pinned layer. At least one of the free layer and the pinned layer includes a first vertical magnetic layer on the tunnel barrier layer... Agent:

20140353781 - Memory devices comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls and methods of forming a memory device comprising magnetic tracks individually comprising a plurality of magnetic domains having domain w: A method of forming a memory device having magnetic tracks individually comprising a plurality of magnetic domains having domain walls, includes forming an elevationally outer substrate material of uniform chemical composition. The uniform composition material is partially etched into to form alternating regions of elevational depressions and elevational protrusions in... Agent:

20140353782 - Thermally assisted mram with a multilayer encapsulant for low thermal conductivity: A technique is provided for a thermally assisted magnetoresistive random access memory device. A magnetic tunnel junction is formed. Contact wiring having a top contact electrode and a bottom contact electrode is formed. The contact wiring provides write bias to heat the magnetic tunnel junction. A multilayer dielectric encapsulant is... Agent:

20140353785 - Low-consumption, amr-type, integrated magnetoresistor: An integrated magnetoresistive sensor (20; 30; 40) of an AMR (Anisotropic Magneto Resistance) type, formed by a magnetoresistive strip (24) of ferromagnetic material and having an elongated shape with a preferential magnetization direction (EA). A set/reset coil (22) has a stretch (34a, 34b), which extends over and transversely to the... Agent: Stmicroelectronics S.r.l.

20140353786 - Semiconductor detector with radiation shield: A semiconductor radiation detector includes a bulk layer of semiconductor material. On a first side of said bulk layer is an arrangement of field electrodes and a collection electrode for collecting radiation-induced signal charges from said bulk layer. A radiation shield exists on a second side of said bulk layer,... Agent:

20140353787 - Image sensor and process thereof: An image sensor including a microlens, a substrate, a first dielectric layer, a second dielectric layer and a color filter is provided. The microlens receives light; the substrate includes a light sensing element in a light sensing area for receiving light incident to the microlens. The first dielectric layer and... Agent: United Microelectronics Corp.

20140353790 - Method of fabricating a semiconductor device: Provided is a semiconductor device having a backside illuminated image sensor and a method of forming same. The method includes providing a first substrate and a second substrate, forming metal interconnections on a first surface of the first substrate, forming a filling insulating layer filling spaces between sides of the... Agent:

20140353788 - Semiconductor optical package and method: Embodiments of the present disclosure are directed to optical packages having a package body that includes a light protection coating on at least one surface of a transparent material. The light protection coating includes one or more openings to allow light to be transmitted to the optical device within the... Agent:

20140353789 - Sensor package with exposed sensor array and method of making same: A packaged sensor assembly and method of forming that includes a first substrate having opposing first and second surfaces and a plurality of conductive elements each extending between the first and second surfaces. A second substrate comprises opposing front and back surfaces, one or more detectors formed on or in... Agent:

20140353791 - Miniaturized implantable sensor platform having multiple devices and sub-chips: This invention describes a hermetically sealed package which can be implanted in the body. The package comprise of stacked substrates where surface of one substrate hosts biosensors which are exposed to body fluids to monitor concentrations of substances selected from analytes, metabolites, and proteins, and body physiological parameters. The structure... Agent: Optoelectronics Systems Consulting, Inc.

20140353792 - Light sensors with infrared photocurrent suppression: A light sensor is formed by an array of photodiodes comprising plurality of a region of a first conductivity type that have been formed in a semiconductor layer or a substrate of a second conductivity type, and deep trenches placed between regions of the first conductivity type. Trenches extend deep... Agent:

20140353793 - Guarding ring structure of a high voltage device and manufacturing method thereof: The present invention provides a guarding ring structure of a semiconductor high voltage device and the manufacturing method thereof The guarding ring structure comprises a first N type monocrystalline silicon substrate (3), a second N type monocrystalline silicon substrate (8), a discontinuous oxide layer (2), a metal field plate (1),... Agent:

20140353794 - Semiconductor arrangement and method of forming: A semiconductor arrangement is provided comprising a guard region. The semiconductor arrangement comprises an active region disposed on a first side of the guard region. The active region comprises an active device. The guard region of the semiconductor arrangement comprises residue from the active region. A method of forming a... Agent:

20140353795 - Integrated circuits including finfet devices with shallow trench isolation that includes a thermal oxide layer and methods for making the same: Integrated circuits and methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes etching an enhanced high-aspect-ratio process (eHARP) oxide fill that is disposed in an STI trench between two adjacent fins to form a recessed eHARP oxide fill. The two adjacent... Agent:

20140353796 - Fin efuse formed by trench silicide process: A semiconductor structure and method of manufacturing the same are provided. The semiconductor device includes an enhanced performance electrical fuse formed in a polysilicon fin using a trench silicide process. In one embodiment, at least one semiconductor fin is formed on a dielectric layer present on the surface of a... Agent:

20140353797 - Fuse/resistor utilizing interconnect and vias and method of making: A semiconductor structure comprising a fuse/resistor structure over a functional layer having a substrate. The fuse/resistor structure includes a via, a first interconnect layer, and a second interconnect layer. The via is over the functional layer and has a first end and a second end vertically opposite the first end,... Agent:

20140353798 - Vertically oriented semiconductor device and shielding structure thereof: The present disclosure involves a semiconductor device. The semiconductor device includes a substrate; a capacitor disposed over the substrate; an inductor disposed over the substrate and having a coil feature surrounding the capacitor; and a shielding structure over the substrate and configured around the coil feature.... Agent:

20140353799 - Esd transistor: An ESD transistor is provided. The ESD transistor includes a collector region on a substrate, a base contact region on the substrate, an emitter region spaced apart from the base contact region, a sink region disposed vertically below the collector region, and a buried layer disposed horizontally under the sink... Agent: Magnachip Semiconductor, Ltd.

20140353801 - Device isolation in finfet cmos: Embodiments herein provide approaches for device isolation in a complimentary metal-oxide fin field effect transistor. Specifically, a semiconductor device is formed with a retrograde doped layer over a substrate to minimize a source to drain punch-through leakage. A set of replacement fins is formed over the retrograde doped layer, each... Agent:

20140353800 - Tone inversion of self-assembled self-aligned structures: A stack of an organic planarization layer (OPL) and a template layer is provided over a substrate. The template layer is patterned to induce self-assembly of a copolymer layer to be subsequently deposited. A copolymer layer is deposited and annealed to form phase-separated copolymer blocks. An original self-assembly pattern is... Agent: International Business Machines Corporation

20140353802 - Methods for integration of pore stuffing material: A process is provided for methods of reducing damage to an ultra-low k layer during fabrication. In one aspect, a method includes: providing a cured ultra-low k film containing pores filled with a pore-stuffing material; and modifying an exposed surface of the ultra-low k film to provide a modified layer... Agent: Globalfoundries Inc.

20140353803 - Semiconductor device structures: Methods of forming features are disclosed. One method comprises forming a resist over a pool of acidic or basic material on a substrate structure, selectively exposing the resist to an energy source to form exposed resist portions and non-exposed resist portions, and diffusing acid or base of the acidic or... Agent:

20140353804 - Method for producing group iii nitride semiconductor and group iii nitride semiconductor: A first side surface of post of the first stripe is formed so that a plane which is most parallel to the first side surface among low-index planes of the growing Group III nitride semiconductor is a m-plane (10-10), and a first angle between the first lateral vector obtained by... Agent: Toyoda Gosei Co., Ltd.

20140353806 - Bypass diode: A bypass diode includes a semiconductor substrate having a first surface and a second surface opposite to each other, a p electrode as a first conductive type electrode and an n electrode as a second conductive type electrode arranged on the first surface, a back surface electrode arranged on the... Agent: Sharp Kabushiki Kaisha

20140353805 - Methods of semiconductor contaminant removal using supercritical fluid: A process is provided for the removal of contaminants from a semiconductor device, for example, removing contaminants from pores of an ultra-low k film. In one aspect, a method includes: providing a dielectric layer with contaminant-containing pores and exposing the dielectric layer to a supercritical fluid. The supercritical fluid can... Agent: Globalfoundries Inc.

20140353807 - Semiconductor package with integrated interference shielding and method of manufacture thereof: An integrated electromagnetic interference (EMI) shield for a semiconductor module package. The integrated EMI shield includes a plurality of wirebond springs electrically connected between a ground plane in the substrate of the package and a conductive layer printed on the top of the package mold compound. The wirebond springs have... Agent:

20140353808 - Packaged semiconductor device: Disclosed is a packaged device, comprising a carrier comprising a first carrier contact, a first electrical component having a first top surface and a first bottom surface, the first electrical component comprising a first component contact disposed on the first top surface, the first bottom surface being connected to the... Agent:

20140353809 - Semiconductor device and manufacturing method of semiconductor device: A technique capable of enhancing a reliability of a semiconductor device is provided. A semiconductor device has a die pad on which a semiconductor chip is mounted. The die pad is sealed with resin so that a lower surface located on an opposite side of an upper surface on which... Agent: Renesas Electronics Corporation

20140353810 - Semiconductor device and method of manufacturing the same: A semiconductor device includes a semiconductor substrate provided with a predetermined element and having wirings formed on its main surface connected to back wirings by a plurality of through silicon vias (TSVs), and a conductive cover which covers the main surface of the semiconductor substrate. The semiconductor substrate and the... Agent: Kabushiki Kaisha Toshiba

20140353812 - Semiconductor device: Provided is a resin sealed semiconductor device with improved reliability. After positioning a cap (lid) so as to cover semiconductor chips and wires, resin is supplied into a space formed by the cap, so that a sealing body is formed to cover the semiconductor chips and the wires. In the... Agent:

20140353811 - Semiconductor packaging container, semiconductor device, electronic device: A semiconductor packaging container allowing to use in millimeter band is provided at a low cost. The inner SIG pads and the inner GND pads, capable of a direct connection with a signal terminal of a semiconductor chip 10 are provided on the bottomed cylindrical dielectric case formed of the... Agent: Yokowo Co., Ltd.

20140353814 - Semiconductor device and method of manufacturing semiconductor device: A semiconductor device incorporating a heat spreader and improved to inhibit dielectric breakdown is provided. The semiconductor device has an electrically conductive heat spreader having a bottom surface, a sheet member having a front surface and a back surface electrically insulated from each other, IGBTs and diodes fixed on the... Agent: Mitsubishi Electric Corporation

20140353815 - Semiconductor die assemblies and semiconductor devices including same: Methods of fabricating multi-die assemblies including a wafer segment having no integrated circuitry thereon and having a plurality of vertically stacked dice thereon electrically interconnected by conductive through vias, resulting multi-die assemblies, and semiconductor devices comprising such multi-die assemblies. The wafer segment may function as a heat sink to enhance... Agent:

20140353813 - Semiconductor package having a system-in-package structure: A semiconductor package includes a substrate. A lower semiconductor chip is disposed above the substrate. An upper semiconductor chip is disposed on the lower semiconductor chip. A top surface of the lower semiconductor chip at an end of the lower semiconductor chip is exposed. A heat slug disposed above the... Agent: Samsung Electronics Co., Ltd.

20140353817 - Heat dissipation device embedded within a microelectronic die: The subject matter of the present application relates to a heat dissipation device that is embedded within a microelectronic die. The heat dissipation device may be fabricated by forming at least one trench extending into the microelectronic die from a microelectronic die back surface, which opposes an active surface thereof,... Agent:

20140353816 - Method of forming a high thermal conducting semiconductor device package: A semiconductor device package (100) includes a heat spreader (503) formed by depositing a first thin film layer (301) of a first metal on a top surface (150) of a die (110) and to exposed portions of a top surface of an encapsulant (208), depositing a second thin film layer... Agent:

20140353818 - Power module comprising two substrates and method of manufacturing the same: A method of manufacturing a power module comprising two substrates is provided, wherein the method comprises disposing a compensation layer of a first thickness above a first substrate; disposing a second substrate above the compensation layer; and reducing the thickness of the compensation layer from the first thickness to a... Agent:

20140353819 - Polymer layers embedded with metal pads for heat dissipation: An integrated circuit structure includes a metal pad, a passivation layer including a portion over the metal pad, a first polymer layer over the passivation layer, and a first Post-Passivation Interconnect (PPI) extending into to the first polymer layer. The first PPI is electrically connected to the metal pad. A... Agent:

20140353822 - Semiconductor device: Reliability of a semiconductor device is improved. A semiconductor device has a base material comprised of insulating material having a through hole, a terminal formed on a lower surface of the base material, and a semiconductor chip mounted on an upper surface of the base material in a face-up manner.... Agent: Renesas Electronics Corporation

20140353820 - Semiconductor device and method for fabricating the same: Semiconductor device and method for fabricating the same are provided. The semiconductor device comprises a first metal wiring line, a chip pad which is electrically connected with the first metal wiring line and has a first width, a passivation layer which encloses the chip pad and includes a contact hole,... Agent: Samsung Electronics Co., Ltd.

20140353821 - Semiconductor devices having solder terminals spaced apart from mold layers and related methods: A method of forming an electronic device may include providing a solder structure on a surface of a substrate, and a surface of the solder structure spaced apart from the substrate may be planar. A mold layer may be formed on the surface of the substrate, wherein the mold layer... Agent:

20140353823 - Semiconductor package and method of manufacturing the same: Disclosed herein is a semiconductor package having a fan-out structure in which a semiconductor chip is buried by an encapsulation member and an external connection member is disposed below the buried semiconductor chip. The semiconductor package includes an embedded rewiring pattern layer, an upper semiconductor chip disposed above the embedded... Agent: Nepes Co., Ltd.

20140353824 - Package-on-package structure: The present invention discloses a package-on-package structure including a top package and a bottom package from top to bottom, where the bottom package includes a first substrate and a second substrate from top to bottom; a pad is placed on one surface of the first substrate, where the pad is... Agent:

20140353825 - Silicidation blocking process using optically sensitive hsq resist and organic planarizing layer: A silicidation blocking process is provided. In one aspect, a silicidation method is provided. The method includes the following steps. A wafer is provided having a semiconductor layer over an oxide layer. An organic planarizing layer (OPL)-blocking structure is formed on one or more regions of the semiconductor layer which... Agent:

20140353826 - Silicidation blocking process using optically sensitive hsq resist and organic planarizing layer: A silicidation blocking process is provided. In one aspect, a silicidation method is provided. The method includes the following steps. A wafer is provided having a semiconductor layer over an oxide layer. An organic planarizing layer (OPL)-blocking structure is formed on one or more regions of the semiconductor layer which... Agent: International Business Machines Corporation

20140353827 - Bridge interconnection with layered interconnect structures: Embodiments of the present disclosure are directed towards techniques and configurations for layered interconnect structures for bridge interconnection in integrated circuit assemblies. In one embodiment, an apparatus may include a substrate and a bridge embedded in the substrate. The bridge may be configured to route electrical signals between two dies.... Agent:

20140353829 - Semiconductor device having insulating layers containing oxygen and a barrier layer containing manganese: A semiconductor device includes an insulating layer formed over a semiconductor substrate, the insulating layer including oxygen, a first wire formed in the insulating layer, and a second wire formed in the insulating layer over the first wire and containing manganese, oxygen, and copper, the second wire having a projection... Agent:

20140353828 - Substrate bonding with diffusion barrier structures: A metallic dopant element having a greater oxygen-affinity than copper is introduced into, and/or over, surface portions of copper-based metal pads and/or surfaces of a dielectric material layer embedding the copper-based metal pads in each of two substrates to be subsequently bonded. A dopant-metal silicate layer may be formed at... Agent:

20140353830 - Semiconductor devices with multilayer flex interconnect structures: Semiconductor devices with multilayer flex interconnect structures. In some embodiments, a semiconductor device may include a semiconductor chip coupled to a planar substrate and a multilayer flex interconnect structure coupled to the semiconductor chip, the multilayer flex interconnect structure including at least: a first conductive layer, a second conductive layer,... Agent: Freescale Semiconductor, Inc.

20140353831 - Methods of forming substrate microvias with anchor structures: Methods of forming anchor structures in package substrate microvias are described. Those methods and structures may include forming a titanium layer in an opening of a package substrate using a first deposition process, wherein the opening comprises an undercut region, and wherein the first conductive layer does not substantially form... Agent:

20140353832 - Semiconductor device and manufacturing method thereof: An object is to use an electrode made of a less expensive material than gold (Au). A semiconductor device comprises: a first titanium layer that is formed to cover at least part of a semiconductor layer and is made of titanium; an aluminum layer that is formed on the first... Agent: Toyoda Gosei Co., Ltd.

20140353833 - Stress compensation layer to improve device uniformity: The present disclosure relates to an integrated chip having one or more back-end-of-the-line (BEOL) stress compensation layers that reduce stress on one or more underlying semiconductor devices, and an associated method of formation. In some embodiments, the integrated chip has a semiconductor substrate with one or more semiconductor devices. A... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20140353834 - Semiconductor device: A semiconductor device includes a first electrode, a second electrode, and an endothermic layer. The first electrode, the second electrode and the endothermic layer are formed on a semiconductor substrate. The first electrode is electrically conductive with an element formed inside of the semiconductor substrate. The endothermic layer is in... Agent: Toyota Jidosha Kabushiki Kaisha

20140353838 - 3d packages and methods for forming the same: Embodiments of the present disclosure include a semiconductor device and methods of forming a semiconductor device. An embodiment is a method of forming a semiconductor device, the method including bonding a die to a top surface of a first substrate, the die being electrically coupled to the first substrate, and... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20140353836 - Chip arrangements and a method for manufacturing a chip arrangement: A chip arrangement may include: a semiconductor chip; an encapsulating structure at least partially encapsulating the semiconductor chip, the encapsulating structure having a first side and a second side opposite the first side, the encapsulating structure including a recess over the first side of the encapsulating structure, the recess having... Agent:

20140353835 - Methods of self-forming barrier integration with pore stuffed ulk material: A process is provided for methods of reducing contamination of the self-forming barrier of an ultra-low k layer during semiconductor fabrication. In one aspect, a method includes: providing a cured ultra-low k film which contains at least one trench, and the pores of the film are filled with a pore-stuffing... Agent:

20140353837 - Semiconductor device and manufacturing method thereof: A semiconductor device according to the present embodiment includes an insulating film provided above a semiconductor substrate. A plurality of upper-layer wirings are provided on the insulating film. A plurality of lower-layer wirings are provided in the insulating film. The lower-layer wirings are respectively located between the upper-layer wirings adjacent... Agent: Kabushiki Kaisha Toshiba

20140353844 - Array substrate, display device and method for fabricating array substrate: An array substrate, a display device and a method for fabricating an array substrate are disclosed. The array substrate comprises at least two GOA elements and a STV signal line, a transmission channel between two of the adjacent GOA elements is formed by a via hole and a gate metal... Agent:

20140353843 - Circuit structures and methods of fabrication with enhanced contact via electrical connection: Circuit structures and methods of fabrication are provided with enhanced electrical connection between, for instance, a first metal level and a contact surface of a conductive structure. Enhanced electrical connection is achieved using a plurality of contact vias which are differently-sized, and disposed over and electrically coupled to the contact... Agent:

20140353839 - Manganese oxide hard mask for etching dielectric materials: A manganese oxide layer is deposited as a hard mask layer on substrate including at least a dielectric material layer. An optional silicon oxide layer may be formed over the manganese oxide layer. A patterned photoresist layer can be employed to etch the optional silicon oxide layer and the manganese... Agent: International Business Machines Corporation

20140353841 - Method for forming an electrical connection between metal layers: A method of making a semiconductor device having a substrate includes forming a first interconnect layer over the substrate, wherein a first metal portion of a first metal type is within the first interconnect layer and has a first via interface location. An interlayer dielectric is formed over the first... Agent:

20140353846 - Semiconductor device and method of forming interconnect structure and mounting semiconductor die in recessed encapsulant: A semiconductor device has conductive pillars formed over a carrier. A first semiconductor die is mounted over the carrier between the conductive pillars. An encapsulant is deposited over the first semiconductor die and carrier and around the conductive pillars. A recess is formed in a first surface of the encapsulant... Agent: Stats Chippac, Ltd.

20140353845 - Semiconductor device and production method therefor: A production method for a semiconductor device having a multi-level interconnection structure including a plurality of interconnection layers stacked one on another on a semiconductor substrate is provided. In the production method, the step of forming each of the interconnection layers of the multi-level interconnection structure includes an interconnection forming... Agent: Rohm Co., Ltd.

20140353840 - Stacked microelectronic packages having sidewall conductors and methods for the fabrication thereof: A method for fabricating a stacked microelectronic device includes attaching a first package layer to a second package layer to form stacked microelectronic layers. Saw streets of the first package layer overlie and are aligned with saw streets of the second package layer. The first and second package layers include... Agent:

20140353842 - Wide pin for improved circuit routing: Embodiments described herein provide approaches for improved circuit routing using a wide-edge pin. Specifically, provided is an integrated circuit (IC) device comprising a standard cell having a first metal layer (M1) pin coupled to a second metal layer (M2) wire at a via. The M1 pin has a width greater... Agent:

20140353847 - Semiconductor package: A semiconductor package includes: a plurality of lead members disposed with a space therebetween over a surface of a substrate, a first semiconductor chip disposed in a face-up manner over the first surface of the substrate between at least two of the plurality of lead members; a second semiconductor chip... Agent: Sk Hynix Inc.

20140353848 - Adhesive film for heat dissipation, semiconductor device including the same, and method of fabricating the semiconductor device: A heat dissipation adhesive film, a semiconductor device including the same, and a method of fabricating the semiconductor device, the heat dissipation adhesive film being placeable between a protective layer encasing a semiconductor element therein and a heat dissipation metal layer on the protective layer to bond the protective layer... Agent:

20140353850 - Semiconductor package and fabrication method thereof: A semiconductor package is disclosed, which includes: a circuit board; a carrier disposed on the circuit board; an RF chip disposed on the carrier; a plurality of high level bonding wires electrically connecting electrode pads of the RF chip and the circuit board; and an encapsulant formed on the circuit... Agent: Siliconware Precision Industries Co., Ltd.

20140353849 - System for preventing tampering with integrated circuit: A system for generating a tamper detection signal indicating tampering with one or more circuits of an integrated circuit (IC) includes a tamper detection module, and wire-pairs connected to the tamper detection module and arranged in a winding configuration to form a wire-mesh. The wire-mesh is placed a predefined distance... Agent:

20140353851 - Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device: Provided is a glass composition for protecting a semiconductor junction which contains at least SiO2, B2O3, Al2O3, ZnO and at least two oxides of alkaline earth metals selected from a group consisting of CaO, MgO and BaO, and substantially contains none of Pb, As, Sb, Li, Na and K, wherein... Agent: Shindengen Electric Manufacturing Co., Ltd

20140353852 - Method for processing a carrier and a carrier: A method for processing a carrier may include forming at least one recess structure at least one of over and in the carrier; and annealing the at least one recess structure such that at least one hollow chamber is formed by material of the at least one recess structure, wherein... Agent: Infineon Technologies Dresden Gmbh

20140353853 - Method for manufacturing a multilayer structure on a substrate: The invention relates to a method for manufacturing a multilayer strucute on a first substrate, the method including: using the first substrate made of a first material having a Young's modulus Ev and a thickness ev, and using a second substrate covered by the multilayer structure, the second substrate being... Agent:

  
  
  
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