Active solid-state devices (e.g., transistors, solid-state diodes) patents - Monitor Patents
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Active solid-state devices (e.g., transistors, solid-state diodes)

Below are recently published patent applications awaiting approval from the USPTO. Recent week's RSS XML file available below.
Listing for abstract view: USPTO application #, Title, Abstract excerpt,Patent Agent. Listing format for list view: USPTO National Class full category number, title of the patent application.
  
06/11/2015 > patent applications in patent subcategories.
  
06/04/2015 > patent applications in patent subcategories.
  
05/28/2015 > 295 patent applications in 105 patent subcategories.

20150144857 - Method of forming controllably conductive oxide: In fabricating a memory device, a first electrode is provided. An alloy is formed thereon, and the alloy is oxidized to provide an oxide layer. A second electrode is provided on the oxide layer. In a further method of fabricating a memory device, a first electrode is provided. Oxide is... Agent:

20150144858 - Semiconductor device: The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one... Agent:

20150144864 - Memory arrays and methods of forming memory cells: Some embodiments include methods of forming memory cells. A stack includes ovonic material over an electrically conductive region. The stack is patterned into rails that extend along a first direction. The rails are patterned into pillars. Electrically conductive lines are formed over the ovonic material. The electrically conductive lines extend... Agent:

20150144861 - Resistive memory and method for fabricating the same: Embodiments of the present invention disclose a resistive memory and a method for fabricating the same. The resistive memory comprises a bottom electrode, a resistive layer and a top electrode. The resistive layer is located over the bottom electrode. The top electrode is located over the resistive layer. A conductive... Agent:

20150144860 - Resistive memory array and fabricating method thereof: The present disclosure provides a method of fabricating a resistive memory array. In one embodiment, a method of fabricating a resistive memory array includes forming a plurality of insulators and a conductive structure on a first substrate, performing a resistor-forming process to transform the insulators into a plurality of resistors,... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20150144863 - Resistive memory device and fabrication methods: A method for forming a resistive memory device includes providing a substrate comprising a first metal material, forming a conductive silicon-bearing layer on top of the first metal material, wherein the conductive silicon-bearing layer comprises an upper region and a lower region, and wherein the lower region is adjacent to... Agent:

20150144859 - Top electrode blocking layer for rram device: An integrated circuit device including a resistive random access memory (RRAM) cell formed over a substrate. The RRAM cell includes a top electrode having an upper surface. A blocking layer covers a portion of the upper surface. A via extends above the top electrode within a matrix of dielectric. The... Agent:

20150144862 - Variable resistance memory device and a method of fabricating the same: A variable resistance memory device includes a gate pattern and a dummy gate pattern provided at the same level on a substrate, a first contact pattern provided on the dummy gate pattern, and a variable resistance pattern provided between the dummy gate pattern and the first contact pattern. The gate... Agent:

20150144865 - Phase-change memory and semiconductor recording/reproducing device: Technology capable of improving performance of a phase-change memory is provided. A recording/reproducing film contains Sn (tin), Sb (antimony), and Te (tellurium) and also contains an element X having a bonding strength with Te stronger than a bonding strength between Sn and Te and a bonding strength between Sb and... Agent:

20150144866 - Semiconductor device and method for producing semiconductor device: The present invention provides a memory structure including a resistance-changing storage element, which enables a reset operation with a reset gate and in which cross-sectional areas of a resistance-changing film and a lower electrode in a current-flowing direction can be decreased. The semiconductor device of the present invention comprises a... Agent:

20150144867 - Semiconductor phosphor nanoparticle and light-emitting device including the same: A semiconductor phosphor nanoparticle includes a semiconductor nanoparticle and a first organic compound. An end of the first organic compound is bonded to a surface of the semiconductor nanoparticle, and the other end of the first organic compound is polymerized to form a first inorganic layer.... Agent:

20150144869 - Group-iii nitride structure: Method for producing a group-III nitride structure comprising providing a substrate; providing a masking film on the substrate, which film comprises at least one elongated aperture; growth of a first group-III nitride on the substrate; deposition of an inner first layer of a second group-III nitride on the first group-III... Agent:

20150144871 - Laterally-injected light-emitting diode and laser diode: A p-type superlattice is used to laterally inject holes into an III-nitride multiple quantum well active layer, enabling efficient light extraction from the active area. Laterally-injected light-emitting diodes and laser diodes can enable brighter, more efficient devices that impact a wide range of wavelengths and applications. For UV wavelengths, applications... Agent:

20150144868 - Light-emitting element: According to one embodiment, a light-emitting element comprises: a first electrically-conductive semiconductor layer, a second electrically-conductive semiconductor layer; and an active layer which is disposed between the first electrically-conductive layer and the second electrically-conductive layer, and in which a well layer and a barrier layer are alternately laminated at least... Agent: Lg Innotek Co., Ltd.

20150144873 - Nanostructure semiconductor light emitting device: A nanostructure semiconductor light emitting device includes a plurality of light emitting nanostructures, each of which including a nanocore formed of a first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on a surface of the nanocore, a contact electrode disposed on a... Agent:

20150144872 - Optoelectronic integrated circuit: A semiconductor device includes a substrate supporting a plurality of layers that include at least one modulation doped quantum well (QW) structure offset from a quantum dot in quantum well (QD-in-QW) structure. The modulation doped QW structure includes a charge sheet spaced from at least one QW by a spacer... Agent: The University Of Connecticut

20150144870 - Semiconductor light-emitting device: The present disclosure relates to a semiconductor light emitting device, comprising: a supporting substrate having a first surface and a second surface opposite to the first surface; at least one semiconductor stack formed on the first surface, wherein each stack includes a plurality of semiconductor layers grown sequentially using a... Agent:

20150144875 - Ultraviolet semiconductor light-emitting device and fabrication method: An ultraviolet semiconductor light emitting device includes: a light-emitting epitaxial layer including an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer; a tunnel junction at a non-light-emitting surface of the light-emitting epitaxial layer and having a patterned structure with openings to expose the light-emitting epitaxial layer; an... Agent: Xiamen Sanan Optoelectronics Technology Co., Ltd.

20150144874 - Uv light emitting diode and method of fabricating the same: A UV light emitting diode and a method of fabricating the same are provided. The light emitting diode includes an active area between an n-type nitride-based semiconductor layer and a p-type nitride-based semiconductor layer, wherein the active area includes a plurality of barrier layers containing Al, a plurality of well... Agent:

20150144876 - Semiconductor element and method for producing the same: A method for producing a semiconductor element includes a step of forming a multiple quantum well in which a GaSb layer and an InAs layer are alternately stacked on a GaSb substrate by MOVPE, wherein, in the step of forming a multiple quantum well, an InSb film is formed on... Agent:

20150144878 - Semiconductor devices including superlattice depletion layer stack and related methods: A semiconductor device may include an alternating stack of superlattice and bulk semiconductor layers on a substrate, with each superlattice layer including a plurality of stacked group of layers, and each group of layers of the superlattice layer including a plurality of stacked base semiconductor monolayers defining a base semiconductor... Agent:

20150144877 - Vertical semiconductor devices including superlattice punch through stop layer and related methods: A semiconductor device may include a substrate, and a plurality of fins spaced apart on the substrate. Each of the fins may include a lower semiconductor fin portion extending vertically upward from the substrate, and at least one superlattice punch-through layer on the lower fin portion. The superlattice punch-through layer... Agent:

20150144879 - Photodetectors and photovoltaics based on semiconductor nanocrystals: A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including... Agent:

20150144880 - Non-planar gate all-around device and method of fabrication thereof: A non-planar gate all-around device and method of fabrication thereby are described. In one embodiment, the device includes a substrate having a top surface with a first lattice constant. Embedded epi source and drain regions are formed on the top surface of the substrate. The embedded epi source and drain... Agent:

20150144881 - Direct and sequential formation of monolayers of boron nitride and graphene on substrates: The invention generally related to a method for preparing a layer of graphene directly on the surface of a substrate, such as a semiconductor substrate. The layer of graphene may be formed in direct contact with the surface of the substrate, or an intervening layer of a material may be... Agent:

20150144882 - Controlled epitaxial boron nitride growth for graphene based transistors: We have demonstrated controlled growth of epitaxial h-BN on a metal substrate using atomic layer deposition. This permits the fabrication of devices such as vertical graphene transistors, where the electron tunneling barrier, and resulting characteristics such as ON-OFF rate may be altered by varying the number of epitaxial layers of... Agent:

20150144886 - Finfet with merge-free fins: A semiconductor device comprises an insulation layer, an active semiconductor layer formed on an upper surface of the insulation layer, and a plurality of fins formed on the insulation layer. The fins are formed in the gate and spacer regions between a first source/drain region and second source/drain region, without... Agent:

20150144883 - Forming recessed structure with liquid-deposited solution: A damascene approach is used to form a recessed structure in a substrate for receiving liquid-deposited solution, such as a carbon nanotube (CNT) solution. The liquid-deposited solution is built-up in the recessed structure, simplifying the coating process and providing a more uniform thickness of the liquid-deposited layer.... Agent: Atmel Corporation

20150144884 - Graphene film, electronic device, and method for manufacturing electronic device: A reliable graphene film that provides complete semiconductive properties without mixing of metallic properties, redacts an off current, achieves a high current on/off ratio of 105 or more sufficient for practical use, and prevents variations in electric properties is obtained. In a grapheme film 3, a plurality of ribbon-shaped graphenes... Agent: National Institute Of Advanced Industrial Science And Technology

20150144885 - Graphene structure and method of manufacturing the graphene structure, and graphene device and method of manufacturing the graphene device: A graphene structure and a method of manufacturing the graphene structure, and a graphene device and a method of manufacturing the graphene device. The graphene structure includes a substrate; a growth layer disposed on the substrate and having exposed side surfaces; and a graphene layer disposed on the side surfaces... Agent: Sungkyunkwan University Foundation For Corporate Collaboration

20150144887 - Manufacturable sub-3 nanometer palladium gap devices for fixed electrode tunneling recognition: A technique is provided for manufacturing a nanogap in a nanodevice. An oxide is disposed on a wafer. A nanowire is disposed on the oxide. A helium ion beam is applied to cut the nanowire into a first nanowire part and a second nanowire part which forms the nanogap in... Agent:

20150144888 - Manufacturable sub-3 nanometer palladium gap devices for fixed electrode tunneling recognition: A technique is provided for manufacturing a nanogap in a nanodevice. An oxide is disposed on a wafer. A nanowire is disposed on the oxide. A helium ion beam is applied to cut the nanowire into a first nanowire part and a second nanowire part which forms the nanogap in... Agent:

20150144913 - Adhesive film and manufacturing method of the same, and display device including the adhesive film: An adhesive film that includes a first region having a first hardness, and second regions disposed on opposing sides of the first region and having a second hardness that is greater than the first hardness.... Agent:

20150144932 - Adhesive film and method for encapsulating organic electronic device using same: The present invention relates to an adhesive film, to an encapsulated product of an organic electronic device using same and to a method for encapsulating an organic electronic device using same. More particularly, an adhesive film for encapsulating an organic electronic device comprises: a protective film layer, a first adhesive... Agent:

20150144905 - Array substrate for display device: The present invention provides a display device and a dual gate type thin film transistor (TFT) structure for an electronic device. According to an embodiment, the dual gate TFT structure includes a first gate electrode formed on a substrate; a semiconductor layer formed on the first gate electrode; an insulating... Agent:

20150144910 - Array substrate for display device and method of fabricating the same: An array substrate for a display device includes a first thin film transistor (TFT) including a first semiconductor layer, a first gate electrode corresponding to the first semiconductor layer, a first source electrode and a first drain electrode; a second TFT including a second semiconductor layer, a second gate electrode... Agent:

20150144928 - Buried grid for outcoupling waveguided light in oleds: Light-emitting devices are provided that include a mixed-index layer having a buried grid disposed below a bottom electrode of the device. The grid provides improved outcoupling into glass and air modes relative to techniques that omit such a grid and/or that use a conventional low-index grid embedded in the emissive... Agent:

20150144892 - Capacitor structures for display pixel threshold voltage compensation circuits: A display may have an array of organic light-emitting diode display pixels. Each display pixel may have a light-emitting diode that emits light under control of a thin-film drive transistor. Each display pixel may have thin-film transistors and capacitor structures that form a circuit for compensating the drive transistor for... Agent:

20150144937 - Compound for organic optoelectronic device, organic light emitting diode comprising same, and display device comprising organic light emitting diode: d

20150144938 - Compound for organic optoelectronic device, organic light emitting diode including the same and display including the organic light emitting diode: A compound for an organic optoelectronic device, an organic light emitting diode including the same, and a display device including the organic light emitting diode are disclosed and the compound for an organic optoelectronic device represented by a combination of the following Chemical Formulae 1 and 2 provides an organic... Agent:

20150144924 - Condensed cyclic compound and organic light-emitting device including the same: c

20150144919 - Display device: A display device includes a first substrate, an organic EL layer formed on the first substrate and curved in each pixel, and color filters disposed in the respective pixels, and curved to match the organic EL layer. With this configuration, a change in the chromaticity and brightness of the display... Agent:

20150144921 - Display device: A display device is discussed which can include: a flexible substrate defined into a first area, a second area bent from an edge of the first area, and a third area outwardly expanded from the second area; a thin film transistor layer disposed on the substrate; an organic emission layer... Agent: Lg Display Co., Ltd.

20150144914 - Display device and method of manufacturing the same: Provided is a display device, including a pixel electrode in each of a plurality of pixels; an auxiliary wiring part including a first auxiliary wiring having a first edge portion, and a second auxiliary wiring having a second edge portion spaced apart from and facing the first edge portion; an... Agent:

20150144929 - Display device, method of laying out light emitting elements, and electronic device: Disclosed herein is a display device in which light emitting elements of a plurality of colors including a light emitting element emitting blue light are formed in each pixel on a substrate on which a transistor is formed for each sub-pixel, and a plurality of pixels formed with sub-pixels of... Agent:

20150144915 - Display panel for display device: Disclosed is a display panel in which a jumping wiring made of a heterogeneous material for the prevention of static electricity connects a signal pad with a test wiring of an array substrate, or a display panel, and induces a discharge of the static electricity when the static electricity generated... Agent: Lg Display Co., Ltd.

20150144893 - Display substrate and driving method thereof, display apparatus: A display substrate and a driving method thereof, and a display apparatus are provide. The display substrate includes an array of a plurality of sub-pixels having at least two colors, wherein the sub-pixels of each color constitute a plurality of sub-pixel sets, each of the sub-pixel sets includes at least... Agent:

20150144906 - Display unit, method of manufacturing display unit, and electronic apparatus: A display unit includes: an organic light emitting element including a first electrode, an organic layer, and a second electrode in order, the organic layer including a conductive layer; and an auxiliary electrode configured to be electrically connected to the second electrode via the conductive layer in the organic layer.... Agent:

20150144934 - Electronic devices having displays with openings: An electronic device may have a display. The display may have an active region in which display pixels are used to display images. The display may have one or more openings and may be mounted in a housing associated with the electronic device. An electronic component may be mounted in... Agent:

20150144922 - Large area organic light emitting diode display: A large area organic light emitting diode display is provided. The organic light emitting diode display comprises a substrate including a display area defining a plurality of pixel areas in a matrix manner and a non-display area surrounding the display area; a thin film transistor disposed in each pixel area;... Agent: Lg Display Co., Ltd.

20150144900 - Layered structure for oled device, method for manufacturing the same, and oled device having the same: A layered structure for an organic light-emitting diode (OLED) device, the layered structure including a light-transmissive substrate and an internal extraction layer formed on one side of the light-transmissive substrate, in which the internal extraction layer includes (1) a scattering area containing scattering elements composed of solid particles and pores,... Agent: Saint-gobain Glass France

20150144899 - Method of making a stack of the type comprising a first electrode, an active layer, and a second electrode: l

20150144918 - Method of manufacturing optical film for reducing color shift, organic light-emitting display apparatus using optical film for reducing color shift, and method of manufacturing the same: An optical film manufacturing method includes forming a master in which a shape corresponding to a plurality of micro-lens patterns is engraved, forming a low refractive index pattern layer in which the plurality of micro-lens patterns are formed, by using the master, forming a high refractive index material layer that... Agent:

20150144916 - Organic el display device and method of manufacturing the same: The present invention is a method of manufacturing an organic EL display device including a display part arranged with a plurality of pixels including an organic EL light emitting layer, and a terminal part arranged with a plurality of terminals each connected to the organic EL light emitting layer respectively,... Agent:

20150144927 - Organic electroluminescence device and material for organic electroluminescence device: e

20150144895 - Organic electroluminescent device: The present specification discloses an organic electroluminescent device including: a substrate; a cathode provided on the substrate; a light emitting layer provided on the cathode; an anode provided on the light emitting layer; a first p-type organic material layer provided between the cathode and the light emitting layer; and a... Agent: Lg Chem, Ltd.

20150144898 - Organic electroluminescent device: The present invention discloses an “organic light-emitting device (OLED)”, comprising an anode, a cathode, and one or more organic layers, wherein the said organic layer contains at least one compound having the formula (I), and the said OLED has the advantages of excellent light-emitting efficiency, excellent color purity and long... Agent:

20150144904 - Organic electroluminescent device and repairing method thereof: An organic electroluminescent device includes a substrate including a plurality of pixel regions each having a light emission region and an element region; a plurality of thin film transistors (TFTs) including at least one switching TFT and at least one driving TFT in each element region; a planarization layer on... Agent:

20150144926 - Organic light emitting device: Disclosed is an organic light emitting device. The organic light emitting device includes a first emission unit configured to include a common blue emission material layer which is included in common in a plurality of pixels emitting lights having different wavelength ranges, a second emission unit configured to include a... Agent: Lg Display Co., Ltd.

20150144894 - Organic light emitting device and display device: An organic light emitting device and a display device is provided. The organic light emitting device includes an anode, a cathode, and a light emitting layer disposed between the anode and the cathode; an electron transport layer disposed between the cathode and the light emitting layer, and the material of... Agent: Boe Technology Group Co., Ltd.

20150144936 - Organic light emitting device and display unit: An organic light emitting device capable of improving the light extraction characteristics while suppressing the driving voltage and improving the luminescent performance, and a display unit using it are provided. The organic light emitting device includes: a lamination structure that includes a cathode, a plurality of layers including a light... Agent:

20150144897 - Organic light emitting diode: The present disclosure provides an organic light emitting device that includes a first electrode, a second electrode, and two or more light emitting units provided between the first electrode and the second electrode, wherein a charge generation layer is provided between, among the light emitting units, two light emitting units... Agent:

20150144903 - Organic light emitting diode device: An organic light emitting diode device includes an emission layer between first and second electrodes, a first auxiliary layer, and a second auxiliary layer. The first electrode includes a silver-magnesium alloy having a greater content of silver than magnesium. The first auxiliary layer is between the first electrode and emission... Agent:

20150144930 - Organic light emitting diode display and method for manufacturing the same: An organic light emitting diode (OLED) display includes: a substrate; an organic light emitting diode formed on the substrate; a metal oxide layer formed on the substrate and covering the organic light emitting diode; a first inorganic layer formed on the metal oxide layer and covering a relatively larger area... Agent:

20150144902 - Organic light emitting diode display device: An organic light emitting diode display device includes: a reflective electrode and an auxiliary electrode; a bank layer on the reflective electrode and the auxiliary electrode, the bank layer including a first open portion and a second open portion exposing a portion of the reflective electrode and a portion of... Agent:

20150144923 - Organic light emitting diode display device and method of fabricating the same: An OLED display device includes a first oxide semiconductor layer including first to fourth regions; a first gate electrode on a first insulating layer and the first oxide semiconductor layer, and completely overlapping the first region; a first storage electrode extending from the first gate electrode and overlapping the second... Agent:

20150144907 - Organic light emitting diode display panel and method for manufacturing the same: An organic light emitting diode display panel is disclosed, which comprises: a first substrate having a first edge, a second edge, a third edge opposite to the first edge, and a fourth edge opposite to the second edge; a second substrate opposite to the first substrate; an organic light emitting... Agent:

20150144911 - Organic light emitting display: The present disclosure provides an organic light emitting display including: a first substrate including a display area where an organic light emitting device is formed and a non-display area where a plurality of pads are formed, a second substrate facing and spaced apart from the first substrate, a pattern formed... Agent: Lg Display Co., Ltd.

20150144909 - Organic light emitting display apparatus and method for manufacturing the same: Disclosed is an organic light emitting display (OLED) apparatus that includes a substrate; an organic light emitting element on the substrate, the organic light emitting element including a first electrode, an organic light emitting layer and a second electrode; a viscoelastic layer on the organic light emitting element, wherein an... Agent:

20150144912 - Organic light emitting display apparatus and method of manufacturing the same: Provided are an organic light emitting display apparatus and a method of manufacturing the same. The organic light emitting display apparatus includes: a thin film transistor (TFT) substrate including a plurality of thin film transistors, an organic light-emissive device on the TFT substrate, and an encapsulation layer on the TFT... Agent: Lg Display Co., Ltd.

20150144925 - Organic light emitting display device: Discussed is an organic light emitting display device. An OLED including a transparent anode formed of one conductive transparent material and an organic light emitting diode (OLED) including a cavity anode formed of a plurality of conductive materials are provided in one panel.... Agent: Lg Display Co., Ltd.

20150144917 - Organic light emitting display device and method of manufacturing the same: An organic light emitting display device includes a first substrate, a second substrate, and an array of organic light emitting elements formed over the first substrate and interposed between the first and second substrate. The array comprises a pixel defining layer. The organic light emitting display device further includes a... Agent:

20150144908 - Organic light emitting display panel and organic light emitting display device including the same: Discussed is an organic light emitting display panel and an organic light emitting display device including the same. In the organic light emitting display panel, each of a plurality of unit pixels includes first to third driving transistors respectively connected to the first to third organic light emitting diodes, a... Agent: Lg Display Co., Ltd.

20150144935 - Organic light-emitting device: The present invention provides an organic light emitting device including: a substrate; and two or more stacked light emitting elements, which comprise a first electrode, at least one intermediate electrode, a second electrode, and an organic material layer disposed between the electrodes, the stacked organic light emitting elements including a... Agent:

20150144901 - Organic light-emitting diode: An organic light-emitting diode includes a carrier substrate, a scattering layer, a first electrode, an organic layer sequence with at least one active layer, and a second electrode wherein all the components are arranged in the stated sequence, the scattering layer has a higher average refractive index than the organic... Agent: Osram Oled Gmbh

20150144891 - Organic light-emitting diode (oled) display capable of controlling light transmittance: An organic light-emitting diode (OLED) display capable of controlling light transmittance is disclosed. In one aspect, the OLED display includes a plurality of pixels, each including a first region configured to emit light and a second region configured to transmit light therethrough and a plurality of first electrodes respectively formed... Agent: Samsung Display Co., Ltd.

20150144933 - Organic light-emitting display apparatus and method of manufacturing the same: An organic light-emitting display apparatus includes: a substrate; a pixel electrode disposed on the substrate; an intermediate layer that is disposed on the pixel electrode and includes an organic light-emitting layer; a facing electrode disposed on the intermediate layer; and a thin film encapsulating layer disposed on the facing electrode,... Agent:

20150144889 - Organic x-ray detector with barrier layer: An organic x-ray detector and a method of making the organic x-ray detector are disclosed. The x-ray detector includes a TFT array disposed on a substrate, an organic photodiode layer disposed on the TFT array, a barrier layer disposed on the photodiode layer, and a scintillator layer disposed on the... Agent: General Electric Company

20150144896 - Stacked organic light emitting diode: The present specification discloses an organic electroluminescent device including: an anode; a cathode; and two or more light emitting units provided between the anode and the cathode and including a light emitting layer, in which a light emitting unit among the light emitting units, which is the most associated with... Agent:

20150144890 - Structure to enhance light extraction and lifetime of oled devices: A device having high index layers is provided. The device includes an organic light emissive device, an air interface, a first planarization layer, and a first barrier layer. The first planarization layer is disposed between the air interface and the organic light emissive device and has an index of refraction... Agent: Universal Display Corporation

20150144931 - Substrate for organic electronic device: The present application relates to a substrate for an organic electronic device, an organic electronic device, and a lighting device. In an embodiment of the present application, a substrate or an organic electronic device which may form an organic electronic device capable of ensuring performance including light extraction efficiency or... Agent:

20150144920 - Touch panel: A flexible touch panel is provided. Both reduction in thickness and high sensitivity of a touch panel are achieved. The touch panel includes a first flexible substrate, a first insulating layer over the first substrate, a transistor and a light-emitting element over the first insulating layer, a color filter over... Agent: Simiconductor Enargy Laboratory Co., Ltd.

20150144943 - Array substrate and method of fabricating the same: An array substrate includes: a substrate; a thin film transistor including a gate electrode, an oxide semiconductor layer and source and drain electrodes, wherein a first insulating layer of an inorganic insulating material is disposed between the gate electrode and the oxide semiconductor layer, and wherein a second insulating layer... Agent:

20150144944 - Array substrate including oxide thin film transistor and method of fabricating the same: An array substrate including: a gate barrier layer on a substrate; a gate line on the gate barrier layer, the gate line having a gate open portion exposing the gate barrier layer in a gate electrode region; a gate insulating layer on the gate line; an active layer on the... Agent:

20150144945 - Display device: A transistor includes a gate electrode over a substrate, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film in contact with one surface of the oxide semiconductor film, and a pair of conductive films in contact with the oxide semiconductor film. A capacitor includes a metal... Agent: Semiconductor Energy Laboratory Co., Ltd.

20150144946 - Display device: A display device that includes a capacitor with low power consumption even when the number of subpixels included in a pixel is increased is provided. The area of an opening in a subpixel that controls transmission of white light is smaller than the area of an opening in each of... Agent: Semiconductor Energy Laboratory Co., Ltd.

20150144940 - Display panel and method of manufacturing the same: A display panel includes first to third test lines connected to the each of data lines, extending in the second direction, and arranged in the first direction, a first test pad electrically connected to the first test line, the first test pad and the first test line being formed from... Agent:

20150144941 - Display substrate comprising pixel tft and driving tft and preparation method thereof: Disclosed is a display substrate including a driving unit on a substrate comprising a first thin film transistor and a display unit on the substrate being adjacent to the driving unit and comprising a second thin film transistor.... Agent:

20150144947 - Method of manufacturing semiconductor device: An object is to provide a method for manufacturing a highly reliable semiconductor device including a transistor with stable electric characteristics. A method for manufacturing a semiconductor device includes the steps of: forming a gate electrode over a substrate having an insulating surface; forming a gate insulating film over the... Agent:

20150144942 - Oxide thin film transistor and array substrate including the same: An oxide thin film transistor (TFT) includes an oxide semiconductor layer including a first semiconductor layer and a second semiconductor layer on the first semiconductor layer; a gate insulating layer on the oxide semiconductor layer; a gate electrode on the gate insulating layer; an interlayer insulating layer on the gate... Agent: Lg Display Co., Ltd.

20150144939 - Thin film transistor array panel and method for manufacturing the same: A thin film transistor array panel includes: a gate line including a gate electrode; a first gate insulating layer on the gate line; a semiconductor layer on the first gate insulating layer and overlapping the gate electrode; a second gate insulating layer on the semiconductor layer and the first gate... Agent: Samsung Display Co., Ltd.

20150144948 - Semiconductor device: A semiconductor device in which the area of a circuit that is unnecessary during normal operation is small. The semiconductor device includes a first circuit and a second circuit. The first circuit includes a third circuit storing at least one pair of first data including a history of a branch... Agent:

20150144949 - Semiconductor device and manufacturing method thereof: A manufacturing method of a semiconductor device having a stacked structure in which a lower layer is exposed is provided without increasing the number of masks. A source electrode layer and a drain electrode layer are formed by forming a conductive film to have a two-layer structure, forming an etching... Agent: Semiconductor Energy Laboratory Co., Ltd.

20150144952 - Display substrate, method of manufacturing the same, and display device including the same: A display substrate, method of manufacturing the same, and a display device including the same are disclosed. In one aspect, a display substrate includes a first gate electrode formed on a base substrate, a scan line electrically connected to the first gate electrode, a gate insulation layer, an etch stop... Agent:

20150144951 - Thin film transistor array panel and manufacturing method thereof: A thin film transistor array panel including: an insulation substrate, a gate line provided on the insulation substrate and including a gate electrode, a gate insulating layer provided on the gate line, a semiconductor layer provided on the gate insulating layer, and a source electrode and a drain electrode provided... Agent: Samsung Display Co., Ltd.

20150144950 - Thin film transistor structure having big channel-width and tft substrate circuit: The present invention discloses a thin film transistor (TFT) structure having big channel-width. The TFT structure comprises a gate, a source and a drain. The source and the drain are respectively be a spiral, and are symmetrical and corresponding to each other to form as a double spiral arrangement. By... Agent:

20150144957 - Electric field management for a group iii-nitride semiconductor device: A semiconductor device includes a substrate, a first active layer, a second active layer, at least first and second electrodes, an E-field management layer, and at least one injection electrode. The first active layer is disposed over the substrate. The second active layer is disposed on the first active layer... Agent:

20150144956 - Gallium nitride self-supported substrate, light-emitting device and manufacturing method therefor: Provided is a self-supporting gallium nitride substrate useful as an alternative material for a gallium nitride single crystal substrate, which is inexpensive and also suitable for having a large area. This substrate is composed of a plate composed of gallium nitride-based single crystal grains, wherein the plate has a single... Agent:

20150144955 - Isolated gate field effect transistor and manufacture method thereof: An isolated gate field effect transistor and the manufacture method thereof. The isolated gate field effect transistor includes a substrate; a nitride transistor structure arranged on the substrate; a dielectric layer on the nitride transistor structure, where the dielectric layer includes a first dielectric layer, a second dielectric layer and... Agent:

20150144959 - Light-emitting device: Disclosed is a light-emitting device (1) including a light-emitting element (2) emitting primary light, and a light converter (3) absorbing a part of the primary light emitted from the light-emitting element (2) and emitting secondary light having a longer wavelength than the primary light. The light converter (3) contains a... Agent: Sharp Kabushiki Kaisha

20150144954 - Method for heteroepitaxial growth of iii metal-face polarity iii-nitrides on substrates with diamond crystal structure and iii-nitride semiconductors: The present invention discloses a method of heteroepitaxial growth enabling the successful growth of thin films of GaN and III-nitride semiconductor heterostructures of (0001) orientation with III metal-face polarity on diamond substrates being either polycrystalline or single crystal with various crystallographic orientations. The method uses a thin AlN nucleation layer... Agent:

20150144958 - Methods of forming semiconductor structures including iii-v semiconductor material using substrates comprising molybdenum, and structures formed by such methods: Methods of fabricating semiconductor structures include the formation of molybdenum nitride at one or more surfaces of a substrate comprising molybdenum, and providing a layer of III-V semiconductor material, such as GaN, over the substrate. Semiconductor structures formed by methods described herein may include a substrate comprising molybdenum, molybdenum nitride... Agent:

20150144953 - Transistors with field plates resistant to field plate material migration and methods of their fabrication: An embodiment of a transistor includes a semiconductor substrate, spaced-apart source and drain electrodes coupled to the semiconductor substrate, a gate electrode coupled to the semiconductor substrate between the source and drain electrodes, a dielectric layer over the gate electrode and at least a portion of the semiconductor substrate, and... Agent:

20150144962 - Complementarily strained finfet structure: A complementary fin field-effect transistor (FinFET) includes a p-type device having a p-channel fin. The p-channel fin may include a first material that is lattice mismatched relative to a semiconductor substrate. The first material may have a compressive strain. The FinFET device also includes an n-type device having an re-channel... Agent:

20150144961 - High frequency device and method of manufacturing the same: A high frequency device includes: a capping layer formed on an epitaxial structure; source and drain electrodes formed on the capping layer; a multilayer insulating pattern formed on entire surfaces of the source and drain electrodes and the capping layer in a step shape; a T-shaped gate passing through the... Agent: Electronics And Telecommunications Research Institute

20150144966 - Schottky diode with reduced forward voltage: A semiconductor component includes a semiconductor body of a first conduction type and a metal layer on the semiconductor body, wherein the metal layer forms with the semiconductor body a Schottky contact along a contact surface. A doping concentration of the first conduction type on the contact surface varies along... Agent:

20150144967 - Semiconductor device: A semiconductor device includes a semiconductor layer made of first conductivity type SiC; a second conductivity type well region formed on the semiconductor layer and having a channel region; a first conductivity type source region formed on the well region and including a first region adjacent to the well region... Agent:

20150144963 - Silicon carbide epi-wafer and method of fabricating the same: A method of fabricating an epi-wafer includes providing a wafer in a susceptor, and growing an epi-layer on the wafer. The growing of the epi-layer on the wafer includes a first process of supplying a first input quantity of a raw material to the susceptor, and a second process of... Agent:

20150144964 - Silicon carbide epi-wafer and method of fabricating the same: A method of fabricating an epi-wafer includes providing a wafer in a susceptor, performing a surface treatment on the wafer by heating the susceptor and supplying a surface treatment gas, and growing an epi-layer on the wafer. An epi-wafer includes a wafer, and an epi-layer formed on the wafer. Surface... Agent: Lg Innotek Co., Ltd.

20150144965 - Silicon carbide semiconductor device and fabrication method of silicon carbide semiconductor device: A p-type region, a p− type region, and a p+ type region are selectively disposed in a surface layer of a silicon carbide substrate base. The p-type region and the p− type region are disposed in a breakdown voltage structure portion that surrounds an active region. The p+ type region... Agent: National Institute Of Advanced Industrial Science

20150144960 - Tapered gate electrode for semiconductor devices: The subject matter disclosed herein relates to metal-oxide-semiconductor (MOS) devices, such as silicon carbide (SiC) power devices (e.g., MOSFETs, IGBTs, etc.) In an embodiment, a semiconductor device includes a gate oxide layer disposed on top of a semiconductor layer. The semiconductor device also includes a gate electrode having a tapered... Agent: General Electric Company

20150144968 - Method of stress induced cleaving of semiconductor devices: A method of dicing semiconductor devices includes depositing a continuous first layer over the substrate, such that the first layer imparts a compressive stress to the substrate, and etching grooves in the first layer to increase local stress at the grooves compared to stress at the remainder of the first... Agent:

20150144971 - Chip scale light emitting device with metal pillars in a molding compound formed at wafer level: Thick metal pillars are formed upon light emitting dies while the dies are still on their supporting wafer. A molding compound is applied to fill the space between the pillars on each die, and contact pads are formed atop the pillars. The metal pillars provide electrical contact between the contact... Agent:

20150144973 - Display device: A display device having a first pixel electrode and a second pixel electrode whose areas are different from each other is provided. In the display device, the first pixel electrode and the second pixel electrode are electrically connected to a first transistor and a second transistor, respectively. Gates of the... Agent:

20150144970 - Light emitting device: According to an exemplary embodiment, there is provided a light emitting device including a ceramic substrate, first to fourth connectors, a plurality of semiconductor light emitting elements, and a first metal layer. The ceramic substrate is provided with a first main surface including first to fourth sides and first to... Agent: Toshiba Lighting & Technology Corporation

20150144969 - Light emitting diode package, light source module and backlight unit including the same: A light emitting diode package, a light source module and a backlight unit including the same are provided. A plurality of light emitting diode packages are arranged on a printed circuit board without interference therebetween, by forming lines therein.... Agent: Lg Display Co., Ltd.

20150144972 - Matrix leadframe for led packaging: A leadframe (610) is formed that simplifies the packaging of light emitting elements and/or eliminates the need for stress-inducing folding after encapsulation. In particular, the folding of the contact tabs (505, 506) for surface mounting is performed prior to the mounting and encapsulation of the light emitting elements on the... Agent:

20150144974 - Vertical type ac-led device and manufacturing method thereof: The present invention discloses a vertical AC LED element and fabrication method thereof, wherein the vertical AC LED element comprises a conductive substrate (102); a light-emitting module on the conductive substrate (102), including two horizontally arranged in parallel and mutually-isolated LEDs; wherein the first and second LEDs include a first... Agent:

20150144982 - Led package and manufacturing process of same: A LED package is formed of a substrate, an LED chip, an insulated layer, and a fluorescent adhesive layer. The substrate includes a positive contact and a negative contact. The LED chip is fixed to the substrate and includes a positive terminal and a negative terminal, the former of which... Agent:

20150144976 - Led with light divergent lens: An LED includes a base, a chip mounted on the base and a lens covering the chip. The lens has a light incident face contacting the chip and a light emerging face away from the chip. The light emerging face includes a first face confronting the chip and a second... Agent: Hon Hai Precision Industry Co., Ltd.

20150144981 - Light emitting diode having distributed bragg reflector: A light-emitting diode (LED) according to an exemplary embodiment includes a light-emitting structure arranged on a first surface of a substrate, the light-emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type... Agent:

20150144977 - Light emitting diplay device and manufacturing method of the light emitting display device: The present invention aims to control power consumption of a light emitting display device by reducing parasitic capacitance between wires in a drive circuit part of a periphery region. The light emitting display device of the present invention includes an insulation film arranged above a substrate, a first wiring arranged... Agent:

20150144978 - Light extraction element: Described herein are elements for light emitting devices comprising: an emissive element comprising a host material and an emissive guest material and substantially free of light scattering material; and a light scattering element comprising either a non-emissive or an emissive material, wherein the light scattering element is between about 2.5%... Agent:

20150144975 - Light-emitting device: A light-emitting device comprises a substrate; and a semiconductor stack comprising a III-V group material formed on the substrate, wherein the substrate comprises a first amorphous portion adjacent to the semiconductor stack, and a portion having a material different from that of the first amorphous portion and away from the... Agent: Epistar Corporation

20150144980 - Light-emitting device and manufacturing method thereof: The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprises: a metal connecting structure; a barrier layer on the metal connecting structure, the barrier layer comprising a first metal multilayer on the metal connecting structure and a second metal multilayer on the first metal multilayer;... Agent:

20150144979 - Nanostructure layer and light emitting diode with the same: A nanostructure layer includes a number of nanostructures, wherein the number of nanostructures are aligned along a number of straight lines, a size of each of the number of nanostructures ranges from about 20 nanometers to about 100 nanometers, a distance between adjacent two nanostructures ranges from about 10 nanometers... Agent:

20150144985 - Electronic device: An electronic device includes a base body, which has a top side and also an underside lying opposite the top side. The base body has connection locations at its underside. An electronic component is arranged at the base body at the top side of the base body. The base body... Agent:

20150144983 - Light-emitting diode device: A light-emitting diode device includes a carrier having at least one cavity, a light-emitting diode chip is arranged in a manner at least partly recessed in the at least one cavity, and an ESD protection element, which is formed by a partial region of the carrier. Furthermore, a light-emitting diode... Agent:

20150144984 - Semiconductor light-emitting device: A semiconductor light-emitting device comprises a semiconductor stack comprising a side, a first surface and a second surface opposite to the first surface, wherein the semiconductor stack further comprises a conductive via extending from the first surface to the second surface; a transparent conductive layer formed on the second surface;... Agent:

20150144986 - Solid state lighting devices with accessible electrodes and methods of manufacturing: Various embodiments of light emitting dies and solid state lighting (“SSL”) devices with light emitting dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a light emitting die includes an SSL structure configured to emit light in response to an applied electrical voltage, a first electrode carried... Agent:

20150144987 - Silicone resin composition and an optical semiconductor device: One purpose is to provide a silicone resin composition which provides a cured product having a large Abbe's number and a high brightness. A silicone resin composition including (A-1) an organopolysiloxane having a three-dimensional crosslinked structure, at least two alkenyl groups, and at least one monovalent aromatic hydrocarbon group bonded... Agent:

20150144991 - Power module package and method of manufacturing the same: Disclosed herein are a power module package and a method of manufacturing the same. The power module package includes first and second semiconductor devices mounted on sides of first and second lead frames, ends of which are separated from each other, respectively, a support pin corresponding to a mounting position... Agent: Samsung Electro-mechanics Co., Ltd.

20150144992 - Power semiconductor device: A power semiconductor device may include: an active region having a current flowing through a channel formed therein at the time of a turn-on operation of the power semiconductor device; an termination region formed in the vicinity of the active region; a plurality of trenches formed in a length direction... Agent: Samsung Electro-mechanics Co., Ltd.

20150144993 - Power semiconductor device: A power semiconductor device may include: an active region having a current flowing through a channel formed therein at the time of a turn-on operation of the power semiconductor device; a termination region formed in the vicinity of the active region; a plurality of first trenches formed lengthwise in one... Agent: Samsung Electro-mechanics Co., Ltd.

20150144994 - Power semiconductor device: A power semiconductor device may include: a first semiconductor layer having a first conductivity type; a second semiconductor layer formed on the first semiconductor layer, having a concentration of impurities higher than that of the first semiconductor layer, and having the first conductivity type; a third semiconductor layer formed on... Agent: Samsung Electro-mechanics Co., Ltd.

20150144989 - Power semiconductor device and method of manufacturing the same: A power semiconductor device may include: a first semiconductor region having a first conductivity type; a second semiconductor region having a second conductivity type and formed on the first semiconductor region; a third semiconductor region having the first conductivity type and formed in an upper portion of the second semiconductor... Agent: Samsung Electro-mechanics Co., Ltd.

20150144990 - Power semiconductor device and method of manufacturing the same: A power semiconductor device may include a first semiconductor region having a first conductivity type, a second semiconductor region having a second conductivity type formed on an upper portion of the first semiconductor region, a third semiconductor region having a first conductivity type formed in an inner portion of an... Agent: Samsung Electro-mechanics Co., Ltd.

20150144995 - Semiconductor device: In the reverse-conducting IGBT according to the present invention, an n-type buffer layer surrounds a p-type collector layer. A p-type separation layer surrounds an n-type cathode layer. The n-type buffer layer separates the p-type collector layer and the p-type separation layer from each other. The p-type separation layer separates the... Agent: Mitsubishi Electric Corporation

20150144988 - Semiconductor device and insulated gate bipolar transistor with barrier regions: In a semiconductor device a barrier region is sandwiched between a drift region and a charge carrier transfer region. The barrier and charge carrier transfer regions form a pn junction. The barrier and drift regions form a homojunction. A mean impurity concentration in the barrier region is at least ten... Agent: Infineon Technologies Ag

20150144996 - Semiconductor esd device and method of making same: A semiconductor device includes an SCR ESD device region disposed within a semiconductor body, and a plurality of first device regions of the first conductivity type disposed on a second device region of the second conductivity type, where the second conductivity type is opposite the first conductivity type. Also included... Agent:

20150144997 - Tunable fin-scr for robust esd protection: One embodiment of the present invention relates to a silicon-controlled-rectifier (SCR). The SCR includes a longitudinal silicon fin extending between an anode and a cathode and including a junction region there between. One or more first transverse fins traverses the longitudinal fin at one or more respective tapping points positioned... Agent:

20150144998 - Fin structure of semiconductor device: A fin structure of a semiconductor device, such as a fin field effect transistor (FinFET), and a method of manufacture, is provided. In an embodiment, trenches are formed in a substrate, and a liner is formed along sidewalls of the trenches, wherein a region between adjacent trenches define a fin.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20150145000 - Integrated circuits with shallow trench isolations, and methods for producing the same: Integrated circuits with electrical components near shallow trench isolations and methods for producing such integrated circuits are provided. The method includes forming a trench is a substrate, where the trench has a trench surface. A barrier layer including silicon and germanium is formed overlying the trench surface. A shallow trench... Agent: Globalfoundries, Inc.

20150145001 - Selective nanoscale growth of lattice mismatched materials: Exemplary embodiments provide materials and methods of forming high-quality semiconductor devices using lattice-mismatched materials. In one embodiment, a composite film including one or more substantially-single-particle-thick nanoparticle layers can be deposited over a substrate as a nanoscale selective growth mask for epitaxially growing lattice-mismatched materials over the substrate.... Agent:

20150144999 - Structure and method for finfet device with buried sige oxide: The present disclosure provides a semiconductor device that includes a substrate of a first semiconductor material; a fin feature having a first portion, a second portion and a third portion stacked on the substrate; an isolation feature formed on the substrate and disposed on sides of the fin feature; semiconductor... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20150145002 - Cmos devices with reduced leakage and methods of forming the same: A device includes a first semiconductor layer, and a second semiconductor layer over the first semiconductor layer. The first semiconductor layer and the second semiconductor layer comprise different materials. A semiconductor region is overlying and contacting the second semiconductor layer, wherein a bottom surface of the semiconductor region contacts a... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20150145003 - Finfet semiconductor devices including recessed source-drain regions on a bottom semiconductor layer and methods of fabricating the same: FinFET semiconductor devices and methods of forming the same are provided. The finFET semiconductor devices may include an insulator layer, a bottom semiconductor layer on the insulator layer, a channel fin on the bottom semiconductor layer, a source region on the bottom semiconductor layer and adjacent a first side of... Agent:

20150145004 - Semiconductor device and a method for manufacturing a semiconductor device: The characteristics of a semiconductor device are improved. A semiconductor device is formed so as to have a channel layer formed over a substrate, a barrier layer, a trench penetrating through the barrier layer in an opening region, and reaching some point of the channel layer, a gate electrode arranged... Agent: Renesas Electronics Corporation

20150145005 - Transistor amplifier circuit and integrated circuit: Disclosed is a transistor having a first region of a first conductivity type for injecting charge carriers into the transistor and a laterally extended second region) of the first conductivity type having a portion including a contact terminal for draining said charge carriers from the transistor, wherein the first region... Agent:

20150145006 - Semiconductor device and method for driving the same: The semiconductor device includes a plurality of pixels arranged in rows and columns, and first transistors fewer than the number of the plurality of pixels. The plurality of pixels each includes a photodiode and an amplifier circuit. The amplifier circuit holds the accumulated charge and includes at least a second... Agent:

20150145007 - Imaging systems with image pixels having adjustable responsivity: An imaging system may include an image sensor having an array of image pixels. Some image pixels in the array may be provided with responsivity adjustment structures. For example, broadband pixels in a pixel array may include responsivity adjustment circuitry. The responsivity adjustment circuitry may be configured to narrow the... Agent: Aptina Imaging Corporation

20150145008 - Fin capacitor employing sidewall image transfer: Spacer structures are formed around an array of disposable mandrel structures and above a doped semiconductor material portion. A sidewall image transfer process is employed to pattern an upper portion of the doped semiconductor material portion into an array of doped semiconductor fins. After formation of a dielectric material layer... Agent: International Business Machines Corporation

20150145009 - Semiconductor integrated circuit device and manufacturing method thereof: In order to achieve high-speed operation of an eDRAM, the eDRAM includes: a selection MISFET having a gate electrode that serves as a word line, a source region, and a drain region; a source plug electrode coupled to the source region; and a drain plug electrode coupled to the drain... Agent: Renesas Electronics Corporation

20150145010 - Dynamic random access memory cell employing trenches located between lengthwise edges of semiconductor fins: After formation of semiconductor fins in an upper portion of a bulk semiconductor substrate, a shallow trench isolation layer is formed, which includes a dielectric material and laterally surround lower portions of each semiconductor fin. Trenches are formed between lengthwise sidewalls of neighboring pairs of semiconductor fins. Portions of the... Agent: International Business Corporation

20150145011 - Semiconductor device: A semiconductor device may include, but is not limited to: a semiconductor substrate; a memory capacitor; and a first compensation capacitor. The semiconductor substrate has at least first and second regions. The memory capacitor is positioned over the first region. The memory capacitor may include, but is not limited to:... Agent: Ps4 Luxco S.a.r.l.

20150145013 - Semiconductor device and method for forming the same: A semiconductor device includes an active region tilted at an angle with respect to a buried bit line. The buried bit line includes a metal silicide pattern and a metal pattern. The metal silicide pattern has a plurality of metal silicide films each disposed at a lower portion of the... Agent: Sk Hynix Inc.

20150145012 - Semiconductor structure and manufacturing method of the same: A semiconductor structure is provided. The semiconductor structure includes a first stacked structure. The first stacked structure includes a first stacked portion disposed along a first direction, at least one second stacked portion connected with the first stacked portion and disposed along a second direction perpendicular to the first direction,... Agent: Macronix International Co., Ltd.

20150145015 - Three-dimensional semiconductor memory device: A three-dimensional semiconductor memory device includes stacked structures, vertical semiconductor patterns, common source regions, and well pickup regions. The stacked structures are disposed on a semiconductor layer of a first conductivity type. Each stacked structure includes electrodes vertically stacked on each other and is extended in a first direction. The... Agent:

20150145014 - Vertical memory devices: A vertical memory device includes a substrate, a first cell block and a second cell block. The substrate includes a central region and a peripheral region. At least one first cell block is on the central region. The first cell block includes a first channel and first gate lines. At... Agent:

20150145016 - Three-dimensional nonvolatile memory devices including interposed floating gates: Provided are three-dimensional nonvolatile memory devices and methods of fabricating the same. The memory devices include semiconductor pillars penetrating interlayer insulating layers and conductive layers alternately stacked on a substrate and electrically connected to the substrate and floating gates selectively interposed between the semiconductor pillars and the conductive layers. The... Agent:

20150145019 - Nonvolatile memory device: A nonvolatile memory device may include: an isolation layer formed in a substrate and defining an active region; a control plug formed over the isolation layer; a floating gate formed over the substrate and including a plurality of fingers adjacent to the control plug with a gap provided therebetween; and... Agent: Sk Hynix Inc.

20150145018 - Semiconductor devices: Provided are a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes a charge storage pattern formed on a substrate; a dielectric pattern formed on the charge storage pattern; a first conductive pattern including silicon doped with a first impurity of a first concentration, the... Agent:

20150145017 - Semiconductor structure and method for forming the same: Various embodiments provide semiconductor structures and methods for forming the same. In an exemplary method, a substrate can be provided. The substrate can have a plurality of isolation structures. A top surface of the plurality of isolation structures can be higher than a surface of the substrate. A device layer... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20150145020 - Semiconductor device and method of fabricating the same: A method of fabricating a three-dimensional (3D) semiconductor memory device is provided. Sacrificial layers and insulating layers are alternately and repeatedly stacked on a top surface of a substrate to form a thin layer structure. A channel structure penetrating the thin layer structure is formed to be in contact with... Agent:

20150145021 - Vertical memory devices and methods of manufacturing the same: Nonvolatile memory devices include at least four cylindrical-shaped channel regions, which extend vertically from portions of a substrate located at respective vertices of at least one rhomboid when viewed in a vertical direction relative to a surface of the substrate. A charge storage layer (e.g., ONO layer) is provided on... Agent:

20150145022 - Cmp fabrication solution for split gate memory embedded in hk-mg process: A semiconductor device includes a substrate, at least one logic device and a split gate memory device. The at least one logic device is located on the substrate. The split gate memory device is located on the substrate and comprises a memory gate and a select gate. The memory gate... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20150145024 - Integrated circuits having improved split-gate nonvolatile memory devices and methods for fabrication of same: Integrated circuits are provided. An exemplary integrated circuit includes a source/drain region in a semiconductor substrate. The integrated circuit includes a charge storage structure overlying the semiconductor substrate and having a first sidewall overlying the source/drain region. The integrated circuit also includes a control gate overlying the source/drain region. Further,... Agent:

20150145023 - Semiconductor device and method of manufacturing same: To provide a semiconductor device having a nonvolatile memory improved in characteristics. In the semiconductor device, a nonvolatile memory has a high-k insulating film (high dielectric constant film) between a control gate electrode portion and a memory gate electrode portion and a transistor of a peripheral circuit region has a... Agent: Renesas Electronics Corporation

20150145025 - Semiconductor device: Provided is a semiconductor device having improved performance. A semiconductor substrate is formed with unit LDMOSFET elements. The unit LDMOSFET elements have respective source regions electrically coupled to each other via a first source interconnect line and a second source interconnect line. The unit LDMOSFET elements have respective gate electrodes... Agent:

20150145027 - Method for fabricating a semiconductor device: A method for fabricating a semiconductor device is provided according to one embodiment of the present invention and includes forming an interlayer dielectric on a substrate; forming a trench surrounded by the interlayer dielectric; depositing a dielectric layer and a work function layer on a surface of the trench sequentially... Agent: United Microelectronics Corp.

20150145026 - Semiconductor device and method for forming the same: A semiconductor device including a substrate having an active region and a field-plate region therein is disclosed. At least one trench-gate structure is in the substrate. The field-plate region is at a first side of the trench-gate structure. At least one source doped region is in the substrate at a... Agent: Vanguard International Semiconductor Corporation

20150145028 - Semiconductor device with cell trench structures and contacts and method of manufacturing a semiconductor device: A semiconductor mesa is formed in a semiconductor layer between a first cell trench structure and a second cell trench structure extending from a first surface into the semiconductor layer. An opening is formed in a capping layer formed on the first surface, wherein the opening exposes at least a... Agent:

20150145029 - Semiconductor device having buried gate electrode structures: A semiconductor device includes first and second gate electrode structures and a connection plug. The first gate electrode structure is buried in a semiconductor portion and has array stripes inside a first cell array of transistor cells and a contact stripe outside the first cell array, the contact stripe structurally... Agent:

20150145030 - Semiconductor device and integrated circuit: A semiconductor device in a semiconductor substrate includes a first drain region and a second drain region, a first drift zone and a second drift zone, at least two gate electrodes in the semiconductor substrate, and a channel region between the gate electrodes. The first drift zone is arranged between... Agent:

20150145031 - Vertical-type semiconductor apparatus and fabrication method thereof: A semiconductor apparatus includes a semiconductor substrate including first and second regions, an inactive region formed in the semiconductor substrate of the second region and from a surface thereof, one or more first pillars vertically extending from the semiconductor substrate of the first region, one or more second pillars vertically... Agent: Sk Hynix Inc.

20150145032 - Field-effect transistor and method for the fabrication thereof: The invention relates to a field-effect transistor and a method for its manufacturing having at least one layer, said layer comprising a III-V compound semiconductor, wherein the compound semiconductor comprises at least one element from the chemical group III being selected from any of gallium, aluminium, indium and/or boron and... Agent:

20150145033 - Halo region formation by epitaxial growth: A structure including a semiconductor substrate including a source region and a drain region, a gate located above the semiconductor substrate and between the source region and the drain region, and two opposing halo regions being part of the source and drain regions, respectively, the halo regions being grown epitaxially,... Agent:

20150145034 - Ldmos structure and manufacturing method thereof: A LDMOS structure including a semiconductor substrate, a drain region, a lightly doped drain (LDD) region, a source region and a gate structure is provided. The substrate has a trench. The drain region is formed in the semiconductor substrate under the trench. A LDD region is formed in the semiconductor... Agent: United Microelectronics Corporation

20150145037 - High density trench-based power mosfets with self-aligned active contacts and method for making such devices: Aspects of the present disclosure describe a high density trench-based power MOSFET with self-aligned source contacts. The source contacts are self-aligned with a first insulative spacer and a second insulative spacer, wherein the first spacer is resistant to an etching process that will selectively remove the material the second spacer... Agent:

20150145036 - Power integrated circuit including series-connected source substrate and drain substrate power mosfets: A semiconductor device containing a high voltage MOS transistor with a drain drift region over a lower drain layer and channel regions laterally disposed at the top surface of the substrate. RESURF trenches cut through the drain drift region and body region parallel to channel current flow. The RESURF trenches... Agent:

20150145035 - Semiconductor device: In the interior of a semiconductor substrate having a main surface, a first p− epitaxial region is formed, a second p− epitaxial region is formed on the main surface side, and an n-type drift region and a p-type body region are formed on the main surface side. An n+ buried... Agent:

20150145038 - Super junction semiconductor device having columnar super junction regions: A super junction semiconductor device includes a semiconductor portion with a first surface and a second surface parallel to the first surface. The semiconductor portion includes a doped layer of a first conductivity type formed at least in a cell area. The super junction semiconductor device further includes columnar first... Agent:

20150145039 - Semiconductor device having drain side contact through buried oxide: A semiconductor device configured to provide high heat dissipation and improve breakdown voltage comprises a substrate, a buried oxide layer over the substrate, a buried n+ region in the substrate below the buried oxide layer, and an epitaxial layer over the buried oxide layer. The epitaxial layer comprises a p-well,... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20150145040 - Metal oxide semiconductor and method of making: A drain extended metal oxide semiconductor (MOS) includes a substrate having a semiconductor. A gate is located on the semiconductor, a source is located on the semiconductor and on one side of the gate, and a drain is located on the semiconductor and on another side of said gate. The... Agent:

20150145044 - Floating body transistor constructions, semiconductor constructions, and methods of forming semiconductor constructions: The invention includes floating body transistor constructions containing U-shaped semiconductor material slices. The U-shapes have a pair of prongs joined to a central portion. Each of the prongs contains a source/drain region of a pair of gatedly-coupled source/drain regions, and the floating bodies of the transistors are within the central... Agent:

20150145043 - Rf soi switch with backside cavity and the method to form it: An integrated circuit includes a compound semiconductor substrate having a first semiconductor substrate, an insulating layer on the first semiconductor substrate, and a second semiconductor substrate on the insulating layer, a transistor disposed on the second semiconductor substrate and having a bottom insulated by the insulating layer, a plurality of... Agent:

20150145041 - Substrate local interconnect integration with finfets: A substrate local interconnect structure and method is disclosed. A buried conductor is formed in the insulator region or on the semiconductor substrate. The buried conductor may be formed by metal deposition, doped silicon regions, or silciding a region of the substrate. Metal sidewall portions connect transistor contacts to the... Agent: International Business Machines Corporation

20150145042 - Transistors having multiple lateral channel dimensions: Fin field effect transistors or semiconductor nanowire field effect transistors having different lateral channel dimensions can be formed by providing multiple disposable gate structures, removing one type of disposable gate structures while masking at least another type of disposable gate structures, thinning physically exposed semiconductor material portions by oxidation and... Agent: International Business Machines Corporation

20150145045 - Semiconductor device and manufacturing method: A fabrication process of a semiconductor device is disclosed. The method includes providing a semiconductor substrate with a first insulation layer formed on the semiconductor substrate and a fin formed on the surface of the first insulation layer, and forming a fully-depleted semiconductor layer on sidewalls of the fin, and... Agent:

20150145046 - Semiconductor structure and method for manufacturing the same: The present invention provides a method for manufacturing a semiconductor structure, which comprises following steps: providing a substrate, which comprises upwards in order a base layer, a buried isolation layer, a buried ground layer, an ultra-thin insulating buried layer and a surface active layer; implementing ion implantation doping to the... Agent: Institute Of Microelectronics, Chinese Academy Of Sciences

20150145047 - Implementing buried fet utilizing drain of finfet as gate of buried fet: A method and circuit for implementing an enhanced transistor topology with a buried field effect transistor (FET) utilizing the drain of a FinFET as the gate of the new buried FET and a design structure on which the subject circuit resides are provided. A drain area of the fin area... Agent: International Business Machines Corporation

20150145049 - Complementary fet injection for a floating body cell: The present invention relates to a floating body memory cell comprising: a first MOS transistor and a second MOS transistor, wherein at least the second MOS transistor has a floating body; and wherein the first and second MOS transistors are configured such that charges can be moved to/from the floating... Agent:

20150145050 - Semiconductor device: A semiconductor device includes a first planar semiconductor (e.g., silicon) layer, first and second pillar-shaped semiconductor (e.g., silicon) layers, a first gate insulating film, a first gate electrode, a second gate insulating film, a second gate electrode, a first gate line connected to the first and second gate electrodes, a... Agent:

20150145051 - Semiconductor device: A semiconductor device includes a first planar semiconductor (e.g., silicon) layer, first and second pillar-shaped semiconductor (e.g., silicon) layers, a first gate insulating film, a first gate electrode, a second gate insulating film, a second gate electrode, a first gate line connected to the first and second gate electrodes, a... Agent:

20150145048 - Structure and method for forming cmos with nfet and pfet having different channel materials: Embodiments of the present invention provide an improved structure and method for forming CMOS field effect transistors. In embodiments, silicon germanium (SiGe) is formed on a PFET side of a semiconductor structure, while silicon is disposed on an NFET side of a semiconductor structure. A narrow isolation region is formed... Agent: International Business Machines Corporation

20150145052 - Circuit and method for improving esd tolerance and switching speed: Embodiments of systems, methods, and apparatus for improving ESD tolerance and switching time for semiconductor devices including metal-oxide-semiconductor (MOS) field effect transistors (FETs), and particularly to MOSFETs fabricated on semiconductor-on-insulator and silicon-on-sapphire substrates. Embodiments provide an improved FET structure having an accumulated charge sink (ACS) circuit, fast switching times, and... Agent:

20150145053 - Semiconductor integrated circuit with tsv bumps: A semiconductor integrated circuit is provided. In the semiconductor integrated circuit, each of ESD protection circuitries is disposed between two of TSV bumps arrayed in a matrix, the two being arranged adjacent to each other. First main power lines are disposed to overlap P-channel ESD protection elements. Second main power... Agent: Renesas Electronics Corporation

20150145055 - High voltage devices and method of manufacturing the same: Disclosed is a high voltage device including a substrate structure having a high voltage transistor and a lower wiring connected to the high voltage transistor, a linker structure having a supplemental insulation pattern on the substrate structure and an interconnecting linker penetrating through the supplemental insulation pattern and connected to... Agent:

20150145056 - Semiconductor device and a method for fabricating the same: A semiconductor device including: a first gate pattern disposed in a peripheral region of a substrate; a second gate pattern disposed in a cell region of the substrate; a first insulator formed on sidewalls of the first gate pattern; and a second insulator formed on sidewalls of the second gate... Agent:

20150145054 - Transistor and method for forming the same: Various embodiments provide transistors and methods for forming the same. In an exemplary method, a substrate is provided, having a dummy gate structure including a dummy gate dielectric layer on the substrate and a dummy gate layer on the dummy gate dielectric layer. A dielectric layer is formed on the... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20150145057 - Integrated multiple gate length semiconductor device including self-aligned contacts: A multi-channel semiconductor device includes a first and second gate channels formed in a semiconductor substrate. The first gate channel has a first length and the second gate channel has a second length greater than the first length. A gate dielectric layer is formed in the first and second gate... Agent: International Business Machines Corporation

20150145058 - Transistor with deep nwell implanted through the gate: A method of fabricating a CMOS integrated circuit (IC) includes implanting a first n-type dopant at a first masking level that exposes a p-region of a substrate surface having a first gate stack thereon to form NLDD regions for forming n-source/drain extension regions for at least a portion of a... Agent:

20150145059 - Methods of forming an e-fuse for an integrated circuit product and the resulting integrated circuit product: An integrated circuit product is disclosed that includes a resistor body and an e-fuse body positioned on a contact level dielectric material, wherein the resistor body and the e-fuse body are made of the same conductive material, a first plurality of conductive contact structures are coupled to the resistor body,... Agent: Globalfoundries Inc.

20150145060 - Low resistance contacts without shorting: Devices and methods of forming a device are disclosed. A substrate prepared with at least a first transistor and a second transistor is provided. Each of the first and second transistors includes a gate disposed on the substrate between first and second contact regions in the substrate. A silicide block... Agent: Globalfoundries Singapore Pte. Ltd.

20150145061 - Novel contact structure for a semiconductor device and methods of making same: A device includes first and second spaced-apart active regions positioned in a semiconducting substrate, an isolation region positioned between and separating the first and second spaced-apart active regions, and a layer of gate insulation material positioned on the first active region. A first conductive line feature extends continuously from the... Agent:

20150145063 - Field effect transistors with varying threshold voltages: A method including providing a semiconductor substrate including a first semiconductor device and a second semiconductor device, the first and second semiconductor devices including dummy spacers, dummy gates, and extension regions; protecting the second semiconductor device with a mask; removing the dummy spacers from the first semiconductor device; and depositing... Agent:

20150145062 - Variable length multi-channel replacement metal gate including silicon hard mask: A method of forming a semiconductor device includes forming first and second semiconductor structures on a semiconductor substrate. The first semiconductor structure includes a first gate channel region having a first gate length, and the second semiconductor structure including a second gate channel region having a second gate length that... Agent: International Business Machines Corporation

20150145067 - Fin structure: A fin structure includes a substrate and a fin disposed on a top surface of the substrate. The fin has a height. An epitaxial structure surrounds the fin and the epitaxial structure has a top point which is the farthest point on the epitaxial structure away from the top surface... Agent: United Microelectronics Corp.

20150145064 - Finfet having suppressed leakage current: A FinFET device which includes: a semiconductor substrate; a three dimensional fin oriented perpendicularly to the semiconductor substrate; a local trench isolation between the three dimensional fin and an adjacent three dimensional fin; a nitride layer on the local trench isolation; a gate stack wrapped around a central portion of... Agent: International Business Machines Corporation

20150145065 - Finfet isolation by selective cyclic etch: Etching interleaved structures of semiconductor material forming fins of finFETs and local isolation material interposed between the fins is performed alternately and cyclically by alternating etchants cyclically such as by alternating gases during reactive ion etching. Etchants are preferably alternated when one of the semiconductor material and the local isolation... Agent: International Business Machines Corporation

20150145070 - Merging lithography processes for gate patterning: Methods for fabricating devices on a die, and devices on a die. A method may include patterning a first region to create a first gate having a first gate length and a first contacted polysilicon pitch (CPP) with a first process. The first CPP is smaller than a single pattern... Agent: Qualcomm Incorporated

20150145071 - Methods of forming spacers on finfets and other semiconductor devices: Disclosed herein are various methods of forming spacers on FinFETs and other semiconductor devices. In one example, the method includes forming a plurality of spaced-apart trenches in a semiconducting substrate that defines a fin, forming a first layer of insulating material in the trenches that covers a lower portion of... Agent: Globalfoundries Inc.

20150145066 - Semiconductor device and method of making: A semiconductor device is provided. The semiconductor device includes a channel region disposed between a source region and a drain region, a gate structure over the channel region, an interlayer dielectric (ILD) layer proximate the gate structure, an ILD stress layer proximate the top portion of gate structure and over... Agent: Taiwan Semiconductor Manufacturing Company Limited

20150145069 - Silicon germanium finfet formation: Methods for fabricating a fin in a fin field effect transistor (FinFET), include exposing a single crystal fin structure coupled to a substrate of the FinFET. The single crystal fin structure is of a first material. The method further includes implanting a second material into the exposed single crystal fin... Agent: Qualcomm Incorporated

20150145068 - Structure of finfets: The present invention relates to a method for fabricating FinFETs and the structure thereof. The present invention uses an additional mask to define regions forming semiconductor fins having high semiconductor-fin height. By making use of multiple etching processes of the insulating layer, structures with differences in the height of semiconductor... Agent: National Applied Research Laboratories

20150145072 - Semiconductor devices and methods of fabricating the same: A MOS transistor includes a pair of impurity regions formed in a substrate as spaced apart from each other, and a gate electrode formed on a region of the substrate located between the pair of impurity regions. Each of the impurity regions is formed of a first epitaxial layer, a... Agent:

20150145073 - Low-k dielectric sidewall spacer treatment: Systems and methods are provided for fabricating a semiconductor structure including sidewall spacers. An example semiconductor structure includes: a gate structure, a first sidewall spacer, and a second sidewall spacer. The gate structure is formed over a substrate. The first sidewall spacer is adjacent to the gate structure, a top... Agent: Taiwan Semiconductor Manufacturing Company Limited

20150145074 - Mems device: A MEMS device includes a fixed electrode and a movable electrode arranged isolated and spaced from the fixed electrode by a distance. The movable electrode is suspended against the fixed electrode by one or more spacers including an insulating material, wherein the movable electrode is laterally affixed to the one... Agent:

20150145075 - Mems devices utilizing a thick metal layer of an interconnect metal film stack: A MEMS device, such as an accelerometer or gyroscope, fabricated in interconnect metallization compatible with a CMOS microelectronic device. In embodiments, a proof mass has a first body region utilizing a thick metal layer that is separated from a thin metal layer. The thick metal layer has a film thickness... Agent:

20150145077 - Method of stacking a plurality of dies to form a stacked semiconductor device, and stacked semiconductor device: A method of stacking a plurality of first dies to a respective plurality of second dies, each one of the first dies having a surface including a surface coupling region which is substantially flat, each one of the second dies having a respective surface including a respective surface coupling region... Agent:

20150145076 - Semiconductor package and manufacturing method thereof: There is provided a semiconductor package including: an application specific integrated circuit (ASIC) chip including a first bump ball and a second bump ball formed inwardly of the first bump ball; a micro electro mechanical system (MEMS) sensor electrically connected to the second bump ball; a lead frame electrically connected... Agent: Samsung Electro-mechanics Co., Ltd.

20150145079 - Semiconductor devices and methods of fabrication thereof: In one embodiment, a method of manufacturing a semiconductor device includes oxidizing a substrate to form local oxide regions that extend above a top surface of the substrate. A membrane layer is formed over the local oxide regions and the top surface of the substrate. A portion of the substrate... Agent:

20150145078 - Semiconductor package with air gap: A semiconductor package includes a semiconductor die having a first main side and a second main side opposite the first main side, the first main side having an inner region surrounded by a periphery region. The semiconductor package further includes a film covering the semiconductor die and adhered to the... Agent:

20150145081 - Magnetic memory devices having a uniform perpendicular nonmagnetic rich antisotropy enhanced pattern: Provided are magnetic memory devices, electronic systems and memory cards including the same, methods of manufacturing the same, and methods of controlling a magnetization direction of a magnetic pattern. In a magnetic memory device, atomic-magnetic moments non-parallel to one surface of a free pattern increase in the free pattern. Therefore,... Agent:

20150145080 - Memory element and memory device: There is disclosed a memory element including a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer that has a magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein an... Agent:

20150145082 - Backside-illuminated photodetector structure and method of making the same: A backside-illuminated photodetector structure comprising a first reflecting region, a second reflecting region and a semiconductor region. The semiconductor region is between the first reflecting region and the second reflecting region. The semiconductor region comprises a first doped region and a second doped region.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20150145084 - Diffraction grating with multiple periodic widths: An integrated circuit includes a substrate, a plurality of photo detectors formed in the substrate, and a diffraction grating having multiple sections disposed over the plurality of photo detectors. Each section of the diffraction grating has a respective periodic width for a respective target wavelength. The diffraction grating has at... Agent:

20150145088 - Image sensor and fabricating method thereof: A method of fabricating an image sensor is provided. The method may include preparing a substrate with first to third pixel regions, coating a first color filter layer on the substrate, sequentially forming a first sacrificial layer and a first protection layer to cover the first color filter layer, forming... Agent:

20150145085 - Image sensor and method for fabricating the same: An image sensor includes a substrate including a pixel array region and a logic region where a surface of the pixel array region is higher than a surface of the logic region, and a light shielding pattern formed over the substrate of the logic region and having a surface on... Agent: Sk Hynix Inc.

20150145087 - Manufacturing method for photoelectric conversion apparatus and photoelectric conversion apparatus: A manufacturing method for a photoelectric conversion apparatus in which a microlens is arranged for multiple electric charge accumulation regions formed on a semiconductor substrate, includes forming a first impurity region of a first conductive type on the semiconductor substrate; and forming a second impurity region of a second conductive... Agent:

20150145086 - Optical communication device, reception apparatus, transmission apparatus, and transmission and reception system: An optical communication device, reception apparatus, transmission apparatus and transmission and reception system are disclosed. The optical communication device includes a drive circuit substrate. A first through via extends through the drive circuit substrate and is configured to electrically connect an optical element disposed on a first surface side of... Agent:

20150145089 - Solid-state image sensor, method of manufacturing the same and camera: An image sensor includes a semiconductor layer having first and second faces, and a wiring structure arranged on a side of the first face, wherein photoelectric converters are arranged in the semiconductor layer and light is incident on the second face. The wiring structure includes reflection portions having reflection regions... Agent:

20150145083 - Structure of dielectric grid for a semiconductor device: An image sensor device and a method for manufacturing the image sensor device are provided. An image sensor device includes a pixel region and a non-pixel region in a substrate. In the pixel region there is a plurality of sensor elements. The non-pixel region is adjacent to the pixel region... Agent:

20150145090 - System and method for reducing dark current drift in a photodiode based electron detector: A sensing element that may include (a) a PIN diode that may include an anode that is coupled to an anode contact; a cathode that is coupled to a cathode contact; a semiconductor portion that has a sensing region; and an insulator that is positioned between the cathode contact and... Agent: Applied Materials Israel, Ltd.

20150145091 - Single-band and dual-band infrared detectors: Bias-switchable dual-band infrared detectors and methods of manufacturing such detectors are provided. The infrared detectors are based on a back-to-back heterojunction diode design, where the detector structure consists of, sequentially, a top contact layer, a unipolar hole barrier layer, an absorber layer, a unipolar electron barrier, a second absorber, a... Agent: California Institute Of Technology

20150145092 - Semiconductor device and manufacturing method thereof: A semiconductor device includes a semiconductor substrate, a photoelectric conversion element, a first isolation insulating film, and a current blocking region. The first isolation insulating film is formed around the photoelectric conversion element. The current blocking region is formed in a region between the photoelectric conversion element and the first... Agent:

20150145093 - Image sensor and method of fabricating the same: An image sensor includes a substrate having a front side and a back side, an insulating structure containing circuits on the front side of the substrate, contact holes extending through the substrate to the circuits, respectively, and a plurality of pads disposed on the backside of the substrate, electrically connected... Agent:

20150145094 - Chip package and method for forming the same: A chip package including a first substrate is provided. A plurality of first conductive pads is disposed on a first side of the first substrate. A second substrate is attached onto a second side opposite to the first side of the first substrate. The second substrate includes a micro-electric element... Agent:

20150145095 - Free-standing two-sided devices: Devices having features deposited on two sides of a device substrate and methods for making the same. The devices are useful, for example, as the components in a macroelectronic system. In a preferred embodiment, the devices are photosensors having a plurality of electrodes patterned on a first side of the... Agent:

20150145096 - Mechanisms for forming image-sensor device with epitaxial isolation feature: Embodiments of mechanisms for forming an image-sensor device are provided. The image-sensor device includes a substrate having a front surface and a back surface. The image-sensor device also includes a radiation-sensing region formed in the substrate. The radiation-sensing region is operable to detect incident radiation that enters the substrate through... Agent: Taiwan Semiconductor Manufacturing Co., Ltd

20150145097 - Photodiode with a dark current suppression junction: This invention relates to field photodiodes based on PN junctions that suffer from dark current leakage. An NBL is added to prove a second PN junction with the anode. The second PN junction is reversed biased in order to remove dark current leakage. The present solution requires no additional masks... Agent:

20150145098 - Miniature passive structures, high frequency electrostatic discharge protection networks, and high frequency electrostatic discharge protection schemes: According to various embodiments, a miniature passive structure for electrostatic discharge protection and input/output matching for a high frequency integrated circuit may be provided. The structure may include: either a transmission line or an inductor for providing at least one electrostatic discharge path; and a capacitor with a first end... Agent:

20150145099 - Formation of semiconductor device with resistors: A semiconductor device includes a semiconductor substrate, trench isolations, a sacrificial layer, a first resist protect oxide (RPO) layer, a second RPO layer and a silicide layer. The semiconductor substrate has first portions and second portions which are alternately disposed, and each of the second portions includes a first resist... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20150145102 - Methods for deep trench mim capacitor moat isolation with n+ epitaxial semiconductor wafer scheme: An integrated circuit structure provides at least one metal-insulator-metal (MIM) capacitor and a moat isolation structure wherein the number of processes required is substantially minimized and the formation of the MIM capacitor and the moat isolation structure effectively decouple while the number of processes common to the moat isolation structure... Agent: International Business Machines Corporation

20150145101 - Semiconductor arrangement with capacitor: A semiconductor arrangement includes a logic region and a memory region. The memory region has an active region that includes a semiconductor device. The memory region also has a capacitor within one or more dielectric layers over the active region. The semiconductor arrangement includes a protective ring within at least... Agent: Taiwan Semiconductor Manufacturing Company Limited

20150145100 - Semiconductor arrangment with capacitor: A semiconductor arrangement includes a logic region and a memory region. The memory region has an active region that includes a semiconductor device. The memory region also has a capacitor within one or more dielectric layers over the active region, where the capacitor is over the semiconductor device. The semiconductor... Agent: Taiwan Semiconductor Manufacturing Company Limited

20150145103 - Capacitive device and method of making the same: A capacitive device includes a well, a first dielectric layer, a first conductive layer, a cap dielectric layer, and a first electrode. The well includes a first shoulder portion having an upper surface, a second shoulder portion having an upper surface, and a first trench, sandwiched between the first and... Agent: Taiwan Semiconductor Mnaufacturing Company, Ltd.

20150145104 - Integrated capacitor and method for producing the same: An integrated capacitor includes a substrate with a first main surface area and an opposing second main surface area. A capacitor structure with a dielectric layer is integrated in the first main surface area. A compensation structure with a compensation layer is integrated in the second main surface area. The... Agent:

20150145105 - High-resistive silicon substrate with a reduced radio frequency loss for a radio-frequency integrated passive device: The application relates to a high-resistivity silicon substrate (100) with a reduced radio frequency loss for a radio frequency integrated passive device. The substrate comprising a bulk zone (110) comprising high-resistivity bulk silicon and a preserved sub-surface lattice damage zone (120b) comprising fractured silicon above the bulk zone. The lattice... Agent:

20150145106 - Electronic device manufacture using low-k dielectric materials: Materials and methods for manufacturing electronic devices and semiconductor components using low dielectric materials comprising polyimide based aerogels are described. Additional methods for manipulating the properties of the dielectric materials and affecting the overall dielectric property of the system are also provided.... Agent:

20150145107 - Semiconductor chip with electrically conducting layer: A semiconductor device includes a semiconductor chip having a first main surface, a second main surface opposite to the first main surface, and a side wall surface. An electrical contact area is exposed at the side wall surface of the semiconductor chip. An electrically conducting layer covers at least partially... Agent:

20150145108 - Microelectronic packages having radiofrequency stand-off layers and methods for the production thereof: Microelectronic packages and methods for fabricating microelectronic packages are provided. In one embodiment, the method includes producing a plurality of vertically-elongated contacts in ohmic contact with interconnect lines contained within one or more redistribution layers built over the frontside of a semiconductor die. A molded radiofrequency (RF) separation or stand-off... Agent:

20150145110 - Leadless surface mount assembly package and method of manufacturing the same: Embodiments of the present disclosure relate to a leadless surface mount assembly package, an electronic device, and a method for forming a surface mount assembly package, which package comprising: a first lead; a second lead; a chip fixed on an upper surface of the first lead; a clip coupled to... Agent:

20150145109 - Semiconductor package and method for producing the same: A semiconductor package includes a housing having a bottom surface and an upper surface and a solder pad arranged in the bottom surface of the housing. The solder pad includes a solderable through hole. The housing includes an opening extending from the through hole to the upper surface of the... Agent:

20150145111 - Electronic component with electronic chip between redistribution structure and mounting structure: An electronic component which comprises an electrically conductive mounting structure, an electronic chip on the mounting structure, an electrically conductive redistribution structure on the electronic chip, and a periphery connection structure electrically coupled to the redistribution structure and being configured for connecting the electronic component to an electronic periphery, wherein... Agent: Infineon Technologies Austria Ag

20150145112 - Electronic component: In an embodiment, an electronic component includes a housing, a die pad having a first surface and a second surface opposing the first surface, a first high voltage semiconductor device arranged on the first surface of the die pad, a further semiconductor device arranged on the second surface of the... Agent: Infineon Technologies Ag

20150145113 - Semiconductor package: A semiconductor package with reduced warpage problem is provided, including: a circuit board, having opposing first and second surfaces; a semiconductor chip, formed over a center portion of the first surface of the circuit board; a spacer, formed over a center portion of the semiconductor chip, having a second cross... Agent:

20150145114 - Thermally enhanced package with lid heat spreader: A method and apparatus are provided for manufacturing a lead frame based thermally enhanced package (9) with exposed heat spreader lid array (96) designed to be optimized for compression mold encapsulation of an integrated circuit die (94) by including a perimeter reservoir regions (97r) in each heat spreader lid (96)... Agent: Freescale Semiconductor, Inc.

20150145116 - Die stacks with one or more bond via arrays: An apparatus relating generally to a die stack is disclosed. In such an apparatus, a substrate is included. A first bond via array includes first wires each of a first length extending from a first surface of the substrate. An array of bump interconnects is disposed on the first surface.... Agent: Invensas Corporation

20150145115 - Emiconductor device and manufacturing method thereof: A semiconductor device includes a carrier, a die including a first surface and a second surface, a plurality of first conductive bumps disposed between the second surface of the carrier and the die, wherein the die is flip bonded on the carrier, and a molding disposed over the carrier and... Agent: Taiwan Semicomductor Manufacturing Company Ltd.

20150145117 - Enhanced stacked microelectronic assemblies with central contacts and improved thermal characteristics: A microelectronic assembly includes a dielectric element having oppositely-facing first and second surfaces and one or more apertures extending between the surfaces, the dielectric element further having conductive elements thereon; a first microelectronic element having a rear surface and a front surface facing the first surface of the dielectric element,... Agent: Tessera, Inc.

20150145118 - Ridged integrated heat spreader: An integrated circuit package is presented. In an embodiment, the integrated circuit package has a package substrate, an integrated circuit die attached to the package substrate, and a package level heat dissipation device, such as an integrated heat spreader, attached to the package substrate encapsulating the integrated circuit die. The... Agent:

20150145119 - Integrated circuit and fabricating method thereof: An integrated circuit and a method of fabricating the integrated circuit are provided. In various embodiments, the integrated circuit includes a first substrate, a second substrate, and a bump pad. The first substrate has at least one active device and a plurality of first metallic pads electrically connected to the... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20150145122 - Integrated circuits with internal pads: An embodiment includes an integrated circuit, comprising: a substrate; a first circuit formed on the substrate and coupled to a plurality of first pads on the substrate; and a second circuit formed on the substrate and coupled to a plurality of second pads on the substrate. The first pads are... Agent: Samsung Electronics Co., Ltd.

20150145129 - Mechanisms for forming package structure: Structures and formation methods of a package structure are provided. The package structure includes a semiconductor die and a substrate bonded to the semiconductor die through a first bonding structure and a second bonding structure therebetween. The first bonding structure and the second bonding structure are next to each other... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20150145125 - Passivation process to prevent tiw corrosion: Disclosed is an under bump metallization structure including a plurality of metal or metal alloy layers formed on chip bond pads with improved reliability due to a sacrificial metal oxide and the methods of making the under bump metallization structures.... Agent:

20150145123 - Power semiconductor module and method of manufacturing the same: Disclosed herein are a power semiconductor module and a method of manufacturing the same. The power semiconductor module includes: a substrate on which a semiconductor device is mounted; a pin positioned on the substrate and having one side electrically connected to the substrate; and a molding part formed to cover... Agent: Samsung Electro-mechanics Co., Ltd.

20150145124 - Semiconductor chips with through-silicon vias, and semiconductor packages including the same: Provided is a semiconductor device with through-silicon vias. The device includes a substrate including a lower semiconductor layer, a buried insulating layer, and an upper semiconductor layer, electronic devices on the upper semiconductor layer, a vertical electrode structure including a vertical electrode penetrating the substrate, and an electrode separation pattern... Agent:

20150145126 - Semiconductor device and method of forming compliant stress relief buffer around large array wlcsp: A semiconductor device has a stress relief buffer mounted to a temporary substrate in locations designated for bump formation. The stress relief buffer can be a multi-layer composite material such as a first compliant layer, a silicon layer formed over the first compliant layer, and a second compliant layer formed... Agent: Stats Chippac, Ltd.

20150145128 - Semiconductor device and method of forming stepped interconnect layer for stacked semiconductor die: A semiconductor device comprises a first semiconductor die. An encapsulant is disposed around the first semiconductor die. A first stepped interconnect structure is disposed over a first surface of the encapsulant. An opening is formed in the first stepped interconnect structure. The opening in the first stepped interconnect structure is... Agent: Stats Chippac, Ltd.

20150145120 - Semiconductor device having a through electrode: A semiconductor device includes a through electrode, a pad, and a bump. The through electrode penetrates a device body of the semiconductor device. The pad is disposed over an end of the through electrode to have a first overlap region and a second overlap region that overlap with a central... Agent: Sk Hynix Inc.

20150145127 - Semiconductor package: A semiconductor package is provided. In one configuration, the semiconductor package includes a substrate. A conductive trace is disposed on the substrate. A conductive pillar bump is disposed on the conductive trace, wherein the conductive bump is coupled to a die. In another configuration, a first conductive trace is disposed... Agent:

20150145121 - Thin embedded packages, methods of fabricating the same, electronic systems including the same, and memory cards including the same: An embedded package includes a core layer having a cavity, a first semiconductor chip disposed in the cavity, and bumps disposed on a top surface of the first semiconductor chip, a second semiconductor chip disposed on the first semiconductor chip and the core layer, pads disposed on a top surface... Agent: Sk Hynix Inc.

20150145133 - Apparatus for dicing interposer assembly: Apparatus for performing dicing of die on wafer interposers. Apparatuses are disclosed for use with the methods of dicing an interposer having integrated circuit dies mounted thereon. An apparatus includes a wafer carrier mounted in a frame and having a size corresponding to a silicon interposer, a fixture mounted to... Agent:

20150145132 - Ball arrangement for integrated circuit package devices: An integrated circuit package includes a ball arrangement that includes transmitter contact pairs arranged in a first portion of a ball grid array disposed in the integrated circuit package. Each of the transmitter contact pairs include transmitter differential signal contacts. Pairs of the transmitter contact pairs located adjacent to one... Agent:

20150145130 - Semiconductor packaging and manufacturing method thereof: The present disclosure provides a semiconductor package includes a contact pad, a device external to the contact pad and a solder bump on the contact pad. The device has a conductive contact pad corresponding to the contact pad. The solder bump connects the contact pad with the conductive contact pad.... Agent: Taiwan Semiconductor Manufacturing Company Ltd.

20150145131 - Substrates having ball lands, semiconductor packages including the same, and methods of fabricating semiconductor packages including the same: A package substrate includes a core layer having a first surface and a second surface which are opposite to each other, a ball land pad disposed on the first surface of the core layer, an opening that penetrates the core layer to expose the ball land pad, and a dummy... Agent: Sk Hynix Inc.

20150145134 - Method for forming recess-free interconnect structure: A method for forming an interconnect structure includes forming a dielectric material layer on a semiconductor substrate. An oxygen-rich layer is formed over the dielectric material layer. The dielectric material layer and the oxygen-rich layer are patterned to form a plurality of vias in the semiconductor substrate. A barrier layer... Agent:

20150145135 - Electrically conductive laminate structures: Some embodiments include electrical interconnects. The interconnects may contain laminate structures having a graphene region sandwiched between non-graphene regions. In some embodiments the graphene and non-graphene regions may be nested within one another. In some embodiments an electrically insulative material may be over an upper surface of the laminate structure,... Agent:

20150145136 - Vertically connected integrated circuits: In some examples, an integrated circuit (IC) includes a semiconductor substrate defining a perimeter of the integrated circuit and a castellation formed at the perimeter. The IC also may include a layer including an electrically conductive material formed on a surface of the castellation. In some examples, the layer including... Agent: Honeywell International Inc.

20150145138 - Embedded semiconductive chips in reconstituted wafers, and systems containing same: A reconstituted wafer includes a rigid mass with a flat surface and a base surface disposed parallel planar to the flat surface. A plurality of dice are embedded in the rigid mass. The plurality of dice include terminals that are exposed through coplanar with the flat surface. A process of... Agent: Intel Corporation

20150145137 - Method to provide the thinnest and variable substrate thickness for reliable plastic and flexible electronic device: An electronic device is formed by depositing polyimide on a glass substrate. A conductive material is deposited on the polyimide and patterned to form electrodes and signal traces. Remaining portions of the electronic device are formed on the polyimide. A second polyimide layer is then formed on the first polyimide... Agent: Stmicroelectronics Pte. Ltd

20150145145 - Ic embedded substrate and method of manufacturing the same: Disclosed herein is an IC embedded substrate that includes a core substrate having an opening, an IC chip provided in the opening, a lower insulating layer, and upper insulating layer. The IC chip and the core substrate is sandwiched between the lower insulating layer and the upper insulating layer. The... Agent: Tdk Corporation

20150145142 - Mechanisms for forming package structure: In accordance with some embodiments, a package structure and a method for forming a package structure are provided. The package structure includes a semiconductor die and a molding compound partially or completely encapsulating the semiconductor die. The package structure also includes a through package via in the molding compound. The... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20150145146 - Methods of exposing conductive vias of semiconductor devices and related semiconductor devices: Methods of exposing conductive vias of semiconductor devices may involve positioning a barrier material over conductive vias extending from a backside surface of a substrate to at least substantially conform to the conductive vias. A self-planarizing isolation material may be positioned on a side of the barrier material opposing the... Agent:

20150145141 - Multiple bond via arrays of different wire heights on a same substrate: An apparatus relating generally to a substrate is disclosed. In such an apparatus, a first bond via array has first wires extending from a surface of the substrate. A second bond via array has second wires extending from the surface of the substrate. The first bond via array is disposed... Agent: Invensas Corporation

20150145143 - Placement of monolithic inter-tier vias (mivs) within monolithic three dimensional (3d) integrated circuits (ics) (3dics) using clustering to increase usable whitespace: Placement of Monolithic Inter-tier Vias (MIVs) within monolithic three dimensional (3D) integrated circuits (ICs) (3DICs) using clustering to increase usable whitespace is disclosed. In one embodiment, a method of placing MIVs in a monolithic 3DIC using clustering is provided. The method comprises determining if any MIV placement clusters are included... Agent: Qualcomm Incorporated

20150145140 - Substrate-to-carrier adhesion without mechanical adhesion between abutting surfaces thereof: Wafer to carrier adhesion without mechanical adhesion for formation of an IC. In such formation, an apparatus has a bottom surface of a substrate abutting a top surface of a support platform without adhesive therebetween. A material is disposed around the substrate and on the top surface of the support... Agent: Invensas Corporation

20150145144 - Use of a conformal coating elastic cushion to reduce through silicon vias (tsv) stress in 3-dimensional integration: Integrated circuit assemblies, as well as methods for creating the same, are provided. The integrated circuit assembly includes a first chip and a second chip, including respective face surfaces, wherein the first chip and the second chip are bonded in a face-against-face contact configuration. The integrated circuit assembly includes a... Agent:

20150145139 - Word line coupling prevention using 3d integrated circuit: A memory comprises a first layer comprising a first line. The memory also comprises second layer comprising a series of bit-cells, a word line driver, and a word line coupled to the word line driver. The memory further comprises a first plurality of through vias coupling the word line to... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20150145147 - Apparatus and method for increasing bandwidths of stacked dies: A package structure includes a plurality of die carriers identical to each other. The respective features in each of the plurality of die carriers vertically overlap corresponding features in other ones of the plurality of die carriers. Each of the plurality of die carriers includes a plurality of through-substrate vias... Agent:

20150145148 - Copper ball bond interface structure and formation: An integrated circuit copper wire bond connection is provided having a copper ball (32) bonded directly to an aluminum bond pad (31) formed on a low-k dielectric layer (30) to form a bond interface structure for the copper ball characterized by a first plurality of geometric features to provide thermal... Agent: Freescale Semiconductor, Inc.

20150145149 - Semiconductor device packaging: A method of manufacturing a semiconductor device package includes encapsulating at least partially a plurality of semiconductor chips with encapsulating material to form an encapsulation body. The encapsulation body has a first main surface and a second main surface. At least one of a metal layer and an organic layer... Agent:

20150145150 - Method for manufacturing semiconductor device and alignment mark of semiconductor device: According to one embodiment, a method is disclosed for manufacturing a semiconductor device. The method can include forming a stacked layer in a memory cell region and a mark region, forming a first mask layer above the stacked layer, and forming a second mask layer above the first mask layer;... Agent: Kabushiki Kaisha Toshiba

20150145151 - Metrology method and apparatus, lithographic system, device manufacturing method and substrate: A lithographic process is used to form a plurality of target structures (92, 94) distributed at a plurality of locations across a substrate and having overlaid periodic structures with a number of different overlay bias values distributed across the target structures. At least some of the target structures comprise a... Agent: Asml Netherlands B.v.

  
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