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Below are recently published patent applications awaiting approval from the USPTO. Recent week's RSS XML file available below.
Listing for abstract view: USPTO application #, Title, Abstract excerpt,Patent Agent. Listing format for list view: USPTO National Class full category number, title of the patent application.
  
06/11/2015 > patent applications in patent subcategories.
  
06/04/2015 > patent applications in patent subcategories.
  
05/28/2015 > 295 patent applications in 105 patent subcategories.

20150144857 - Method of forming controllably conductive oxide: In fabricating a memory device, a first electrode is provided. An alloy is formed thereon, and the alloy is oxidized to provide an oxide layer. A second electrode is provided on the oxide layer. In a further method of fabricating a memory device, a first electrode is provided. Oxide is... Agent:

20150144858 - Semiconductor device: The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one... Agent:

20150144864 - Memory arrays and methods of forming memory cells: Some embodiments include methods of forming memory cells. A stack includes ovonic material over an electrically conductive region. The stack is patterned into rails that extend along a first direction. The rails are patterned into pillars. Electrically conductive lines are formed over the ovonic material. The electrically conductive lines extend... Agent:

20150144861 - Resistive memory and method for fabricating the same: Embodiments of the present invention disclose a resistive memory and a method for fabricating the same. The resistive memory comprises a bottom electrode, a resistive layer and a top electrode. The resistive layer is located over the bottom electrode. The top electrode is located over the resistive layer. A conductive... Agent:

20150144860 - Resistive memory array and fabricating method thereof: The present disclosure provides a method of fabricating a resistive memory array. In one embodiment, a method of fabricating a resistive memory array includes forming a plurality of insulators and a conductive structure on a first substrate, performing a resistor-forming process to transform the insulators into a plurality of resistors,... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20150144863 - Resistive memory device and fabrication methods: A method for forming a resistive memory device includes providing a substrate comprising a first metal material, forming a conductive silicon-bearing layer on top of the first metal material, wherein the conductive silicon-bearing layer comprises an upper region and a lower region, and wherein the lower region is adjacent to... Agent:

20150144859 - Top electrode blocking layer for rram device: An integrated circuit device including a resistive random access memory (RRAM) cell formed over a substrate. The RRAM cell includes a top electrode having an upper surface. A blocking layer covers a portion of the upper surface. A via extends above the top electrode within a matrix of dielectric. The... Agent:

20150144862 - Variable resistance memory device and a method of fabricating the same: A variable resistance memory device includes a gate pattern and a dummy gate pattern provided at the same level on a substrate, a first contact pattern provided on the dummy gate pattern, and a variable resistance pattern provided between the dummy gate pattern and the first contact pattern. The gate... Agent:

20150144865 - Phase-change memory and semiconductor recording/reproducing device: Technology capable of improving performance of a phase-change memory is provided. A recording/reproducing film contains Sn (tin), Sb (antimony), and Te (tellurium) and also contains an element X having a bonding strength with Te stronger than a bonding strength between Sn and Te and a bonding strength between Sb and... Agent:

20150144866 - Semiconductor device and method for producing semiconductor device: The present invention provides a memory structure including a resistance-changing storage element, which enables a reset operation with a reset gate and in which cross-sectional areas of a resistance-changing film and a lower electrode in a current-flowing direction can be decreased. The semiconductor device of the present invention comprises a... Agent:

20150144867 - Semiconductor phosphor nanoparticle and light-emitting device including the same: A semiconductor phosphor nanoparticle includes a semiconductor nanoparticle and a first organic compound. An end of the first organic compound is bonded to a surface of the semiconductor nanoparticle, and the other end of the first organic compound is polymerized to form a first inorganic layer.... Agent:

20150144869 - Group-iii nitride structure: Method for producing a group-III nitride structure comprising providing a substrate; providing a masking film on the substrate, which film comprises at least one elongated aperture; growth of a first group-III nitride on the substrate; deposition of an inner first layer of a second group-III nitride on the first group-III... Agent:

20150144871 - Laterally-injected light-emitting diode and laser diode: A p-type superlattice is used to laterally inject holes into an III-nitride multiple quantum well active layer, enabling efficient light extraction from the active area. Laterally-injected light-emitting diodes and laser diodes can enable brighter, more efficient devices that impact a wide range of wavelengths and applications. For UV wavelengths, applications... Agent:

20150144868 - Light-emitting element: According to one embodiment, a light-emitting element comprises: a first electrically-conductive semiconductor layer, a second electrically-conductive semiconductor layer; and an active layer which is disposed between the first electrically-conductive layer and the second electrically-conductive layer, and in which a well layer and a barrier layer are alternately laminated at least... Agent: Lg Innotek Co., Ltd.

20150144873 - Nanostructure semiconductor light emitting device: A nanostructure semiconductor light emitting device includes a plurality of light emitting nanostructures, each of which including a nanocore formed of a first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on a surface of the nanocore, a contact electrode disposed on a... Agent:

20150144872 - Optoelectronic integrated circuit: A semiconductor device includes a substrate supporting a plurality of layers that include at least one modulation doped quantum well (QW) structure offset from a quantum dot in quantum well (QD-in-QW) structure. The modulation doped QW structure includes a charge sheet spaced from at least one QW by a spacer... Agent: The University Of Connecticut

20150144870 - Semiconductor light-emitting device: The present disclosure relates to a semiconductor light emitting device, comprising: a supporting substrate having a first surface and a second surface opposite to the first surface; at least one semiconductor stack formed on the first surface, wherein each stack includes a plurality of semiconductor layers grown sequentially using a... Agent:

20150144875 - Ultraviolet semiconductor light-emitting device and fabrication method: An ultraviolet semiconductor light emitting device includes: a light-emitting epitaxial layer including an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer; a tunnel junction at a non-light-emitting surface of the light-emitting epitaxial layer and having a patterned structure with openings to expose the light-emitting epitaxial layer; an... Agent: Xiamen Sanan Optoelectronics Technology Co., Ltd.

20150144874 - Uv light emitting diode and method of fabricating the same: A UV light emitting diode and a method of fabricating the same are provided. The light emitting diode includes an active area between an n-type nitride-based semiconductor layer and a p-type nitride-based semiconductor layer, wherein the active area includes a plurality of barrier layers containing Al, a plurality of well... Agent:

20150144876 - Semiconductor element and method for producing the same: A method for producing a semiconductor element includes a step of forming a multiple quantum well in which a GaSb layer and an InAs layer are alternately stacked on a GaSb substrate by MOVPE, wherein, in the step of forming a multiple quantum well, an InSb film is formed on... Agent:

20150144878 - Semiconductor devices including superlattice depletion layer stack and related methods: A semiconductor device may include an alternating stack of superlattice and bulk semiconductor layers on a substrate, with each superlattice layer including a plurality of stacked group of layers, and each group of layers of the superlattice layer including a plurality of stacked base semiconductor monolayers defining a base semiconductor... Agent:

20150144877 - Vertical semiconductor devices including superlattice punch through stop layer and related methods: A semiconductor device may include a substrate, and a plurality of fins spaced apart on the substrate. Each of the fins may include a lower semiconductor fin portion extending vertically upward from the substrate, and at least one superlattice punch-through layer on the lower fin portion. The superlattice punch-through layer... Agent:

20150144879 - Photodetectors and photovoltaics based on semiconductor nanocrystals: A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including... Agent:

20150144880 - Non-planar gate all-around device and method of fabrication thereof: A non-planar gate all-around device and method of fabrication thereby are described. In one embodiment, the device includes a substrate having a top surface with a first lattice constant. Embedded epi source and drain regions are formed on the top surface of the substrate. The embedded epi source and drain... Agent:

20150144881 - Direct and sequential formation of monolayers of boron nitride and graphene on substrates: The invention generally related to a method for preparing a layer of graphene directly on the surface of a substrate, such as a semiconductor substrate. The layer of graphene may be formed in direct contact with the surface of the substrate, or an intervening layer of a material may be... Agent:

20150144882 - Controlled epitaxial boron nitride growth for graphene based transistors: We have demonstrated controlled growth of epitaxial h-BN on a metal substrate using atomic layer deposition. This permits the fabrication of devices such as vertical graphene transistors, where the electron tunneling barrier, and resulting characteristics such as ON-OFF rate may be altered by varying the number of epitaxial layers of... Agent:

20150144886 - Finfet with merge-free fins: A semiconductor device comprises an insulation layer, an active semiconductor layer formed on an upper surface of the insulation layer, and a plurality of fins formed on the insulation layer. The fins are formed in the gate and spacer regions between a first source/drain region and second source/drain region, without... Agent:

20150144883 - Forming recessed structure with liquid-deposited solution: A damascene approach is used to form a recessed structure in a substrate for receiving liquid-deposited solution, such as a carbon nanotube (CNT) solution. The liquid-deposited solution is built-up in the recessed structure, simplifying the coating process and providing a more uniform thickness of the liquid-deposited layer.... Agent: Atmel Corporation

20150144884 - Graphene film, electronic device, and method for manufacturing electronic device: A reliable graphene film that provides complete semiconductive properties without mixing of metallic properties, redacts an off current, achieves a high current on/off ratio of 105 or more sufficient for practical use, and prevents variations in electric properties is obtained. In a grapheme film 3, a plurality of ribbon-shaped graphenes... Agent: National Institute Of Advanced Industrial Science And Technology

20150144885 - Graphene structure and method of manufacturing the graphene structure, and graphene device and method of manufacturing the graphene device: A graphene structure and a method of manufacturing the graphene structure, and a graphene device and a method of manufacturing the graphene device. The graphene structure includes a substrate; a growth layer disposed on the substrate and having exposed side surfaces; and a graphene layer disposed on the side surfaces... Agent: Sungkyunkwan University Foundation For Corporate Collaboration

20150144887 - Manufacturable sub-3 nanometer palladium gap devices for fixed electrode tunneling recognition: A technique is provided for manufacturing a nanogap in a nanodevice. An oxide is disposed on a wafer. A nanowire is disposed on the oxide. A helium ion beam is applied to cut the nanowire into a first nanowire part and a second nanowire part which forms the nanogap in... Agent:

20150144888 - Manufacturable sub-3 nanometer palladium gap devices for fixed electrode tunneling recognition: A technique is provided for manufacturing a nanogap in a nanodevice. An oxide is disposed on a wafer. A nanowire is disposed on the oxide. A helium ion beam is applied to cut the nanowire into a first nanowire part and a second nanowire part which forms the nanogap in... Agent:

20150144913 - Adhesive film and manufacturing method of the same, and display device including the adhesive film: An adhesive film that includes a first region having a first hardness, and second regions disposed on opposing sides of the first region and having a second hardness that is greater than the first hardness.... Agent:

20150144932 - Adhesive film and method for encapsulating organic electronic device using same: The present invention relates to an adhesive film, to an encapsulated product of an organic electronic device using same and to a method for encapsulating an organic electronic device using same. More particularly, an adhesive film for encapsulating an organic electronic device comprises: a protective film layer, a first adhesive... Agent:

20150144905 - Array substrate for display device: The present invention provides a display device and a dual gate type thin film transistor (TFT) structure for an electronic device. According to an embodiment, the dual gate TFT structure includes a first gate electrode formed on a substrate; a semiconductor layer formed on the first gate electrode; an insulating... Agent:

20150144910 - Array substrate for display device and method of fabricating the same: An array substrate for a display device includes a first thin film transistor (TFT) including a first semiconductor layer, a first gate electrode corresponding to the first semiconductor layer, a first source electrode and a first drain electrode; a second TFT including a second semiconductor layer, a second gate electrode... Agent:

20150144928 - Buried grid for outcoupling waveguided light in oleds: Light-emitting devices are provided that include a mixed-index layer having a buried grid disposed below a bottom electrode of the device. The grid provides improved outcoupling into glass and air modes relative to techniques that omit such a grid and/or that use a conventional low-index grid embedded in the emissive... Agent:

20150144892 - Capacitor structures for display pixel threshold voltage compensation circuits: A display may have an array of organic light-emitting diode display pixels. Each display pixel may have a light-emitting diode that emits light under control of a thin-film drive transistor. Each display pixel may have thin-film transistors and capacitor structures that form a circuit for compensating the drive transistor for... Agent:

20150144937 - Compound for organic optoelectronic device, organic light emitting diode comprising same, and display device comprising organic light emitting diode: d

20150144938 - Compound for organic optoelectronic device, organic light emitting diode including the same and display including the organic light emitting diode: A compound for an organic optoelectronic device, an organic light emitting diode including the same, and a display device including the organic light emitting diode are disclosed and the compound for an organic optoelectronic device represented by a combination of the following Chemical Formulae 1 and 2 provides an organic... Agent:

20150144924 - Condensed cyclic compound and organic light-emitting device including the same: c

20150144919 - Display device: A display device includes a first substrate, an organic EL layer formed on the first substrate and curved in each pixel, and color filters disposed in the respective pixels, and curved to match the organic EL layer. With this configuration, a change in the chromaticity and brightness of the display... Agent:

20150144921 - Display device: A display device is discussed which can include: a flexible substrate defined into a first area, a second area bent from an edge of the first area, and a third area outwardly expanded from the second area; a thin film transistor layer disposed on the substrate; an organic emission layer... Agent: Lg Display Co., Ltd.

20150144914 - Display device and method of manufacturing the same: Provided is a display device, including a pixel electrode in each of a plurality of pixels; an auxiliary wiring part including a first auxiliary wiring having a first edge portion, and a second auxiliary wiring having a second edge portion spaced apart from and facing the first edge portion; an... Agent:

20150144929 - Display device, method of laying out light emitting elements, and electronic device: Disclosed herein is a display device in which light emitting elements of a plurality of colors including a light emitting element emitting blue light are formed in each pixel on a substrate on which a transistor is formed for each sub-pixel, and a plurality of pixels formed with sub-pixels of... Agent:

20150144915 - Display panel for display device: Disclosed is a display panel in which a jumping wiring made of a heterogeneous material for the prevention of static electricity connects a signal pad with a test wiring of an array substrate, or a display panel, and induces a discharge of the static electricity when the static electricity generated... Agent: Lg Display Co., Ltd.

20150144893 - Display substrate and driving method thereof, display apparatus: A display substrate and a driving method thereof, and a display apparatus are provide. The display substrate includes an array of a plurality of sub-pixels having at least two colors, wherein the sub-pixels of each color constitute a plurality of sub-pixel sets, each of the sub-pixel sets includes at least... Agent:

20150144906 - Display unit, method of manufacturing display unit, and electronic apparatus: A display unit includes: an organic light emitting element including a first electrode, an organic layer, and a second electrode in order, the organic layer including a conductive layer; and an auxiliary electrode configured to be electrically connected to the second electrode via the conductive layer in the organic layer.... Agent:

20150144934 - Electronic devices having displays with openings: An electronic device may have a display. The display may have an active region in which display pixels are used to display images. The display may have one or more openings and may be mounted in a housing associated with the electronic device. An electronic component may be mounted in... Agent:

20150144922 - Large area organic light emitting diode display: A large area organic light emitting diode display is provided. The organic light emitting diode display comprises a substrate including a display area defining a plurality of pixel areas in a matrix manner and a non-display area surrounding the display area; a thin film transistor disposed in each pixel area;... Agent: Lg Display Co., Ltd.

20150144900 - Layered structure for oled device, method for manufacturing the same, and oled device having the same: A layered structure for an organic light-emitting diode (OLED) device, the layered structure including a light-transmissive substrate and an internal extraction layer formed on one side of the light-transmissive substrate, in which the internal extraction layer includes (1) a scattering area containing scattering elements composed of solid particles and pores,... Agent: Saint-gobain Glass France

20150144899 - Method of making a stack of the type comprising a first electrode, an active layer, and a second electrode: l

20150144918 - Method of manufacturing optical film for reducing color shift, organic light-emitting display apparatus using optical film for reducing color shift, and method of manufacturing the same: An optical film manufacturing method includes forming a master in which a shape corresponding to a plurality of micro-lens patterns is engraved, forming a low refractive index pattern layer in which the plurality of micro-lens patterns are formed, by using the master, forming a high refractive index material layer that... Agent:

20150144916 - Organic el display device and method of manufacturing the same: The present invention is a method of manufacturing an organic EL display device including a display part arranged with a plurality of pixels including an organic EL light emitting layer, and a terminal part arranged with a plurality of terminals each connected to the organic EL light emitting layer respectively,... Agent:

20150144927 - Organic electroluminescence device and material for organic electroluminescence device: e

20150144895 - Organic electroluminescent device: The present specification discloses an organic electroluminescent device including: a substrate; a cathode provided on the substrate; a light emitting layer provided on the cathode; an anode provided on the light emitting layer; a first p-type organic material layer provided between the cathode and the light emitting layer; and a... Agent: Lg Chem, Ltd.

20150144898 - Organic electroluminescent device: The present invention discloses an “organic light-emitting device (OLED)”, comprising an anode, a cathode, and one or more organic layers, wherein the said organic layer contains at least one compound having the formula (I), and the said OLED has the advantages of excellent light-emitting efficiency, excellent color purity and long... Agent:

20150144904 - Organic electroluminescent device and repairing method thereof: An organic electroluminescent device includes a substrate including a plurality of pixel regions each having a light emission region and an element region; a plurality of thin film transistors (TFTs) including at least one switching TFT and at least one driving TFT in each element region; a planarization layer on... Agent:

20150144926 - Organic light emitting device: Disclosed is an organic light emitting device. The organic light emitting device includes a first emission unit configured to include a common blue emission material layer which is included in common in a plurality of pixels emitting lights having different wavelength ranges, a second emission unit configured to include a... Agent: Lg Display Co., Ltd.

20150144894 - Organic light emitting device and display device: An organic light emitting device and a display device is provided. The organic light emitting device includes an anode, a cathode, and a light emitting layer disposed between the anode and the cathode; an electron transport layer disposed between the cathode and the light emitting layer, and the material of... Agent: Boe Technology Group Co., Ltd.

20150144936 - Organic light emitting device and display unit: An organic light emitting device capable of improving the light extraction characteristics while suppressing the driving voltage and improving the luminescent performance, and a display unit using it are provided. The organic light emitting device includes: a lamination structure that includes a cathode, a plurality of layers including a light... Agent:

20150144897 - Organic light emitting diode: The present disclosure provides an organic light emitting device that includes a first electrode, a second electrode, and two or more light emitting units provided between the first electrode and the second electrode, wherein a charge generation layer is provided between, among the light emitting units, two light emitting units... Agent:

20150144903 - Organic light emitting diode device: An organic light emitting diode device includes an emission layer between first and second electrodes, a first auxiliary layer, and a second auxiliary layer. The first electrode includes a silver-magnesium alloy having a greater content of silver than magnesium. The first auxiliary layer is between the first electrode and emission... Agent:

20150144930 - Organic light emitting diode display and method for manufacturing the same: An organic light emitting diode (OLED) display includes: a substrate; an organic light emitting diode formed on the substrate; a metal oxide layer formed on the substrate and covering the organic light emitting diode; a first inorganic layer formed on the metal oxide layer and covering a relatively larger area... Agent:

20150144902 - Organic light emitting diode display device: An organic light emitting diode display device includes: a reflective electrode and an auxiliary electrode; a bank layer on the reflective electrode and the auxiliary electrode, the bank layer including a first open portion and a second open portion exposing a portion of the reflective electrode and a portion of... Agent:

20150144923 - Organic light emitting diode display device and method of fabricating the same: An OLED display device includes a first oxide semiconductor layer including first to fourth regions; a first gate electrode on a first insulating layer and the first oxide semiconductor layer, and completely overlapping the first region; a first storage electrode extending from the first gate electrode and overlapping the second... Agent:

20150144907 - Organic light emitting diode display panel and method for manufacturing the same: An organic light emitting diode display panel is disclosed, which comprises: a first substrate having a first edge, a second edge, a third edge opposite to the first edge, and a fourth edge opposite to the second edge; a second substrate opposite to the first substrate; an organic light emitting... Agent:

20150144911 - Organic light emitting display: The present disclosure provides an organic light emitting display including: a first substrate including a display area where an organic light emitting device is formed and a non-display area where a plurality of pads are formed, a second substrate facing and spaced apart from the first substrate, a pattern formed... Agent: Lg Display Co., Ltd.

20150144909 - Organic light emitting display apparatus and method for manufacturing the same: Disclosed is an organic light emitting display (OLED) apparatus that includes a substrate; an organic light emitting element on the substrate, the organic light emitting element including a first electrode, an organic light emitting layer and a second electrode; a viscoelastic layer on the organic light emitting element, wherein an... Agent:

20150144912 - Organic light emitting display apparatus and method of manufacturing the same: Provided are an organic light emitting display apparatus and a method of manufacturing the same. The organic light emitting display apparatus includes: a thin film transistor (TFT) substrate including a plurality of thin film transistors, an organic light-emissive device on the TFT substrate, and an encapsulation layer on the TFT... Agent: Lg Display Co., Ltd.

20150144925 - Organic light emitting display device: Discussed is an organic light emitting display device. An OLED including a transparent anode formed of one conductive transparent material and an organic light emitting diode (OLED) including a cavity anode formed of a plurality of conductive materials are provided in one panel.... Agent: Lg Display Co., Ltd.

20150144917 - Organic light emitting display device and method of manufacturing the same: An organic light emitting display device includes a first substrate, a second substrate, and an array of organic light emitting elements formed over the first substrate and interposed between the first and second substrate. The array comprises a pixel defining layer. The organic light emitting display device further includes a... Agent:

20150144908 - Organic light emitting display panel and organic light emitting display device including the same: Discussed is an organic light emitting display panel and an organic light emitting display device including the same. In the organic light emitting display panel, each of a plurality of unit pixels includes first to third driving transistors respectively connected to the first to third organic light emitting diodes, a... Agent: Lg Display Co., Ltd.

20150144935 - Organic light-emitting device: The present invention provides an organic light emitting device including: a substrate; and two or more stacked light emitting elements, which comprise a first electrode, at least one intermediate electrode, a second electrode, and an organic material layer disposed between the electrodes, the stacked organic light emitting elements including a... Agent:

20150144901 - Organic light-emitting diode: An organic light-emitting diode includes a carrier substrate, a scattering layer, a first electrode, an organic layer sequence with at least one active layer, and a second electrode wherein all the components are arranged in the stated sequence, the scattering layer has a higher average refractive index than the organic... Agent: Osram Oled Gmbh

20150144891 - Organic light-emitting diode (oled) display capable of controlling light transmittance: An organic light-emitting diode (OLED) display capable of controlling light transmittance is disclosed. In one aspect, the OLED display includes a plurality of pixels, each including a first region configured to emit light and a second region configured to transmit light therethrough and a plurality of first electrodes respectively formed... Agent: Samsung Display Co., Ltd.

20150144933 - Organic light-emitting display apparatus and method of manufacturing the same: An organic light-emitting display apparatus includes: a substrate; a pixel electrode disposed on the substrate; an intermediate layer that is disposed on the pixel electrode and includes an organic light-emitting layer; a facing electrode disposed on the intermediate layer; and a thin film encapsulating layer disposed on the facing electrode,... Agent:

20150144889 - Organic x-ray detector with barrier layer: An organic x-ray detector and a method of making the organic x-ray detector are disclosed. The x-ray detector includes a TFT array disposed on a substrate, an organic photodiode layer disposed on the TFT array, a barrier layer disposed on the photodiode layer, and a scintillator layer disposed on the... Agent: General Electric Company

20150144896 - Stacked organic light emitting diode: The present specification discloses an organic electroluminescent device including: an anode; a cathode; and two or more light emitting units provided between the anode and the cathode and including a light emitting layer, in which a light emitting unit among the light emitting units, which is the most associated with... Agent:

20150144890 - Structure to enhance light extraction and lifetime of oled devices: A device having high index layers is provided. The device includes an organic light emissive device, an air interface, a first planarization layer, and a first barrier layer. The first planarization layer is disposed between the air interface and the organic light emissive device and has an index of refraction... Agent: Universal Display Corporation

20150144931 - Substrate for organic electronic device: The present application relates to a substrate for an organic electronic device, an organic electronic device, and a lighting device. In an embodiment of the present application, a substrate or an organic electronic device which may form an organic electronic device capable of ensuring performance including light extraction efficiency or... Agent:

20150144920 - Touch panel: A flexible touch panel is provided. Both reduction in thickness and high sensitivity of a touch panel are achieved. The touch panel includes a first flexible substrate, a first insulating layer over the first substrate, a transistor and a light-emitting element over the first insulating layer, a color filter over... Agent: Simiconductor Enargy Laboratory Co., Ltd.

20150144943 - Array substrate and method of fabricating the same: An array substrate includes: a substrate; a thin film transistor including a gate electrode, an oxide semiconductor layer and source and drain electrodes, wherein a first insulating layer of an inorganic insulating material is disposed between the gate electrode and the oxide semiconductor layer, and wherein a second insulating layer... Agent:

20150144944 - Array substrate including oxide thin film transistor and method of fabricating the same: An array substrate including: a gate barrier layer on a substrate; a gate line on the gate barrier layer, the gate line having a gate open portion exposing the gate barrier layer in a gate electrode region; a gate insulating layer on the gate line; an active layer on the... Agent:

20150144945 - Display device: A transistor includes a gate electrode over a substrate, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film in contact with one surface of the oxide semiconductor film, and a pair of conductive films in contact with the oxide semiconductor film. A capacitor includes a metal... Agent: Semiconductor Energy Laboratory Co., Ltd.

20150144946 - Display device: A display device that includes a capacitor with low power consumption even when the number of subpixels included in a pixel is increased is provided. The area of an opening in a subpixel that controls transmission of white light is smaller than the area of an opening in each of... Agent: Semiconductor Energy Laboratory Co., Ltd.

20150144940 - Display panel and method of manufacturing the same: A display panel includes first to third test lines connected to the each of data lines, extending in the second direction, and arranged in the first direction, a first test pad electrically connected to the first test line, the first test pad and the first test line being formed from... Agent:

20150144941 - Display substrate comprising pixel tft and driving tft and preparation method thereof: Disclosed is a display substrate including a driving unit on a substrate comprising a first thin film transistor and a display unit on the substrate being adjacent to the driving unit and comprising a second thin film transistor.... Agent:

20150144947 - Method of manufacturing semiconductor device: An object is to provide a method for manufacturing a highly reliable semiconductor device including a transistor with stable electric characteristics. A method for manufacturing a semiconductor device includes the steps of: forming a gate electrode over a substrate having an insulating surface; forming a gate insulating film over the... Agent:

20150144942 - Oxide thin film transistor and array substrate including the same: An oxide thin film transistor (TFT) includes an oxide semiconductor layer including a first semiconductor layer and a second semiconductor layer on the first semiconductor layer; a gate insulating layer on the oxide semiconductor layer; a gate electrode on the gate insulating layer; an interlayer insulating layer on the gate... Agent: Lg Display Co., Ltd.

20150144939 - Thin film transistor array panel and method for manufacturing the same: A thin film transistor array panel includes: a gate line including a gate electrode; a first gate insulating layer on the gate line; a semiconductor layer on the first gate insulating layer and overlapping the gate electrode; a second gate insulating layer on the semiconductor layer and the first gate... Agent: Samsung Display Co., Ltd.

20150144948 - Semiconductor device: A semiconductor device in which the area of a circuit that is unnecessary during normal operation is small. The semiconductor device includes a first circuit and a second circuit. The first circuit includes a third circuit storing at least one pair of first data including a history of a branch... Agent:

20150144949 - Semiconductor device and manufacturing method thereof: A manufacturing method of a semiconductor device having a stacked structure in which a lower layer is exposed is provided without increasing the number of masks. A source electrode layer and a drain electrode layer are formed by forming a conductive film to have a two-layer structure, forming an etching... Agent: Semiconductor Energy Laboratory Co., Ltd.

20150144952 - Display substrate, method of manufacturing the same, and display device including the same: A display substrate, method of manufacturing the same, and a display device including the same are disclosed. In one aspect, a display substrate includes a first gate electrode formed on a base substrate, a scan line electrically connected to the first gate electrode, a gate insulation layer, an etch stop... Agent:

20150144951 - Thin film transistor array panel and manufacturing method thereof: A thin film transistor array panel including: an insulation substrate, a gate line provided on the insulation substrate and including a gate electrode, a gate insulating layer provided on the gate line, a semiconductor layer provided on the gate insulating layer, and a source electrode and a drain electrode provided... Agent: Samsung Display Co., Ltd.

20150144950 - Thin film transistor structure having big channel-width and tft substrate circuit: The present invention discloses a thin film transistor (TFT) structure having big channel-width. The TFT structure comprises a gate, a source and a drain. The source and the drain are respectively be a spiral, and are symmetrical and corresponding to each other to form as a double spiral arrangement. By... Agent:

20150144957 - Electric field management for a group iii-nitride semiconductor device: A semiconductor device includes a substrate, a first active layer, a second active layer, at least first and second electrodes, an E-field management layer, and at least one injection electrode. The first active layer is disposed over the substrate. The second active layer is disposed on the first active layer... Agent:

20150144956 - Gallium nitride self-supported substrate, light-emitting device and manufacturing method therefor: Provided is a self-supporting gallium nitride substrate useful as an alternative material for a gallium nitride single crystal substrate, which is inexpensive and also suitable for having a large area. This substrate is composed of a plate composed of gallium nitride-based single crystal grains, wherein the plate has a single... Agent:

20150144955 - Isolated gate field effect transistor and manufacture method thereof: An isolated gate field effect transistor and the manufacture method thereof. The isolated gate field effect transistor includes a substrate; a nitride transistor structure arranged on the substrate; a dielectric layer on the nitride transistor structure, where the dielectric layer includes a first dielectric layer, a second dielectric layer and... Agent:

20150144959 - Light-emitting device: Disclosed is a light-emitting device (1) including a light-emitting element (2) emitting primary light, and a light converter (3) absorbing a part of the primary light emitted from the light-emitting element (2) and emitting secondary light having a longer wavelength than the primary light. The light converter (3) contains a... Agent: Sharp Kabushiki Kaisha

20150144954 - Method for heteroepitaxial growth of iii metal-face polarity iii-nitrides on substrates with diamond crystal structure and iii-nitride semiconductors: The present invention discloses a method of heteroepitaxial growth enabling the successful growth of thin films of GaN and III-nitride semiconductor heterostructures of (0001) orientation with III metal-face polarity on diamond substrates being either polycrystalline or single crystal with various crystallographic orientations. The method uses a thin AlN nucleation layer... Agent:

20150144958 - Methods of forming semiconductor structures including iii-v semiconductor material using substrates comprising molybdenum, and structures formed by such methods: Methods of fabricating semiconductor structures include the formation of molybdenum nitride at one or more surfaces of a substrate comprising molybdenum, and providing a layer of III-V semiconductor material, such as GaN, over the substrate. Semiconductor structures formed by methods described herein may include a substrate comprising molybdenum, molybdenum nitride... Agent:

20150144953 - Transistors with field plates resistant to field plate material migration and methods of their fabrication: An embodiment of a transistor includes a semiconductor substrate, spaced-apart source and drain electrodes coupled to the semiconductor substrate, a gate electrode coupled to the semiconductor substrate between the source and drain electrodes, a dielectric layer over the gate electrode and at least a portion of the semiconductor substrate, and... Agent:

20150144962 - Complementarily strained finfet structure: A complementary fin field-effect transistor (FinFET) includes a p-type device having a p-channel fin. The p-channel fin may include a first material that is lattice mismatched relative to a semiconductor substrate. The first material may have a compressive strain. The FinFET device also includes an n-type device having an re-channel... Agent:

20150144961 - High frequency device and method of manufacturing the same: A high frequency device includes: a capping layer formed on an epitaxial structure; source and drain electrodes formed on the capping layer; a multilayer insulating pattern formed on entire surfaces of the source and drain electrodes and the capping layer in a step shape; a T-shaped gate passing through the... Agent: Electronics And Telecommunications Research Institute

20150144966 - Schottky diode with reduced forward voltage: A semiconductor component includes a semiconductor body of a first conduction type and a metal layer on the semiconductor body, wherein the metal layer forms with the semiconductor body a Schottky contact along a contact surface. A doping concentration of the first conduction type on the contact surface varies along... Agent:

20150144967 - Semiconductor device: A semiconductor device includes a semiconductor layer made of first conductivity type SiC; a second conductivity type well region formed on the semiconductor layer and having a channel region; a first conductivity type source region formed on the well region and including a first region adjacent to the well region... Agent:

20150144963 - Silicon carbide epi-wafer and method of fabricating the same: A method of fabricating an epi-wafer includes providing a wafer in a susceptor, and growing an epi-layer on the wafer. The growing of the epi-layer on the wafer includes a first process of supplying a first input quantity of a raw material to the susceptor, and a second process of... Agent:

20150144964 - Silicon carbide epi-wafer and method of fabricating the same: A method of fabricating an epi-wafer includes providing a wafer in a susceptor, performing a surface treatment on the wafer by heating the susceptor and supplying a surface treatment gas, and growing an epi-layer on the wafer. An epi-wafer includes a wafer, and an epi-layer formed on the wafer. Surface... Agent: Lg Innotek Co., Ltd.

20150144965 - Silicon carbide semiconductor device and fabrication method of silicon carbide semiconductor device: A p-type region, a p− type region, and a p+ type region are selectively disposed in a surface layer of a silicon carbide substrate base. The p-type region and the p− type region are disposed in a breakdown voltage structure portion that surrounds an active region. The p+ type region... Agent: National Institute Of Advanced Industrial Science

20150144960 - Tapered gate electrode for semiconductor devices: The subject matter disclosed herein relates to metal-oxide-semiconductor (MOS) devices, such as silicon carbide (SiC) power devices (e.g., MOSFETs, IGBTs, etc.) In an embodiment, a semiconductor device includes a gate oxide layer disposed on top of a semiconductor layer. The semiconductor device also includes a gate electrode having a tapered... Agent: General Electric Company

20150144968 - Method of stress induced cleaving of semiconductor devices: A method of dicing semiconductor devices includes depositing a continuous first layer over the substrate, such that the first layer imparts a compressive stress to the substrate, and etching grooves in the first layer to increase local stress at the grooves compared to stress at the remainder of the first... Agent:

20150144971 - Chip scale light emitting device with metal pillars in a molding compound formed at wafer level: Thick metal pillars are formed upon light emitting dies while the dies are still on their supporting wafer. A molding compound is applied to fill the space between the pillars on each die, and contact pads are formed atop the pillars. The metal pillars provide electrical contact between the contact... Agent:

20150144973 - Display device: A display device having a first pixel electrode and a second pixel electrode whose areas are different from each other is provided. In the display device, the first pixel electrode and the second pixel electrode are electrically connected to a first transistor and a second transistor, respectively. Gates of the... Agent:

20150144970 - Light emitting device: According to an exemplary embodiment, there is provided a light emitting device including a ceramic substrate, first to fourth connectors, a plurality of semiconductor light emitting elements, and a first metal layer. The ceramic substrate is provided with a first main surface including first to fourth sides and first to... Agent: Toshiba Lighting & Technology Corporation

20150144969 - Light emitting diode package, light source module and backlight unit including the same: A light emitting diode package, a light source module and a backlight unit including the same are provided. A plurality of light emitting diode packages are arranged on a printed circuit board without interference therebetween, by forming lines therein.... Agent: Lg Display Co., Ltd.

20150144972 - Matrix leadframe for led packaging: A leadframe (610) is formed that simplifies the packaging of light emitting elements and/or eliminates the need for stress-inducing folding after encapsulation. In particular, the folding of the contact tabs (505, 506) for surface mounting is performed prior to the mounting and encapsulation of the light emitting elements on the... Agent:

20150144974 - Vertical type ac-led device and manufacturing method thereof: The present invention discloses a vertical AC LED element and fabrication method thereof, wherein the vertical AC LED element comprises a conductive substrate (102); a light-emitting module on the conductive substrate (102), including two horizontally arranged in parallel and mutually-isolated LEDs; wherein the first and second LEDs include a first... Agent:

20150144982 - Led package and manufacturing process of same: A LED package is formed of a substrate, an LED chip, an insulated layer, and a fluorescent adhesive layer. The substrate includes a positive contact and a negative contact. The LED chip is fixed to the substrate and includes a positive terminal and a negative terminal, the former of which... Agent:

20150144976 - Led with light divergent lens: An LED includes a base, a chip mounted on the base and a lens covering the chip. The lens has a light incident face contacting the chip and a light emerging face away from the chip. The light emerging face includes a first face confronting the chip and a second... Agent: Hon Hai Precision Industry Co., Ltd.

20150144981 - Light emitting diode having distributed bragg reflector: A light-emitting diode (LED) according to an exemplary embodiment includes a light-emitting structure arranged on a first surface of a substrate, the light-emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type... Agent:

20150144977 - Light emitting diplay device and manufacturing method of the light emitting display device: The present invention aims to control power consumption of a light emitting display device by reducing parasitic capacitance between wires in a drive circuit part of a periphery region. The light emitting display device of the present invention includes an insulation film arranged above a substrate, a first wiring arranged... Agent:

20150144978 - Light extraction element: Described herein are elements for light emitting devices comprising: an emissive element comprising a host material and an emissive guest material and substantially free of light scattering material; and a light scattering element comprising either a non-emissive or an emissive material, wherein the light scattering element is between about 2.5%... Agent:

20150144975 - Light-emitting device: A light-emitting device comprises a substrate; and a semiconductor stack comprising a III-V group material formed on the substrate, wherein the substrate comprises a first amorphous portion adjacent to the semiconductor stack, and a portion having a material different from that of the first amorphous portion and away from the... Agent: Epistar Corporation

20150144980 - Light-emitting device and manufacturing method thereof: The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprises: a metal connecting structure; a barrier layer on the metal connecting structure, the barrier layer comprising a first metal multilayer on the metal connecting structure and a second metal multilayer on the first metal multilayer;... Agent:

20150144979 - Nanostructure layer and light emitting diode with the same: A nanostructure layer includes a number of nanostructures, wherein the number of nanostructures are aligned along a number of straight lines, a size of each of the number of nanostructures ranges from about 20 nanometers to about 100 nanometers, a distance between adjacent two nanostructures ranges from about 10 nanometers... Agent:

20150144985 - Electronic device: An electronic device includes a base body, which has a top side and also an underside lying opposite the top side. The base body has connection locations at its underside. An electronic component is arranged at the base body at the top side of the base body. The base body... Agent:

20150144983 - Light-emitting diode device: A light-emitting diode device includes a carrier having at least one cavity, a light-emitting diode chip is arranged in a manner at least partly recessed in the at least one cavity, and an ESD protection element, which is formed by a partial region of the carrier. Furthermore, a light-emitting diode... Agent:

20150144984 - Semiconductor light-emitting device: A semiconductor light-emitting device comprises a semiconductor stack comprising a side, a first surface and a second surface opposite to the first surface, wherein the semiconductor stack further comprises a conductive via extending from the first surface to the second surface; a transparent conductive layer formed on the second surface;... Agent:

20150144986 - Solid state lighting devices with accessible electrodes and methods of manufacturing: Various embodiments of light emitting dies and solid state lighting (“SSL”) devices with light emitting dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a light emitting die includes an SSL structure configured to emit light in response to an applied electrical voltage, a first electrode carried... Agent:

20150144987 - Silicone resin composition and an optical semiconductor device: One purpose is to provide a silicone resin composition which provides a cured product having a large Abbe's number and a high brightness. A silicone resin composition including (A-1) an organopolysiloxane having a three-dimensional crosslinked structure, at least two alkenyl groups, and at least one monovalent aromatic hydrocarbon group bonded... Agent:

20150144991 - Power module package and method of manufacturing the same: Disclosed herein are a power module package and a method of manufacturing the same. The power module package includes first and second semiconductor devices mounted on sides of first and second lead frames, ends of which are separated from each other, respectively, a support pin corresponding to a mounting position... Agent: Samsung Electro-mechanics Co., Ltd.

20150144992 - Power semiconductor device: A power semiconductor device may include: an active region having a current flowing through a channel formed therein at the time of a turn-on operation of the power semiconductor device; an termination region formed in the vicinity of the active region; a plurality of trenches formed in a length direction... Agent: Samsung Electro-mechanics Co., Ltd.

20150144993 - Power semiconductor device: A power semiconductor device may include: an active region having a current flowing through a channel formed therein at the time of a turn-on operation of the power semiconductor device; a termination region formed in the vicinity of the active region; a plurality of first trenches formed lengthwise in one... Agent: Samsung Electro-mechanics Co., Ltd.

20150144994 - Power semiconductor device: A power semiconductor device may include: a first semiconductor layer having a first conductivity type; a second semiconductor layer formed on the first semiconductor layer, having a concentration of impurities higher than that of the first semiconductor layer, and having the first conductivity type; a third semiconductor layer formed on... Agent: Samsung Electro-mechanics Co., Ltd.

20150144989 - Power semiconductor device and method of manufacturing the same: A power semiconductor device may include: a first semiconductor region having a first conductivity type; a second semiconductor region having a second conductivity type and formed on the first semiconductor region; a third semiconductor region having the first conductivity type and formed in an upper portion of the second semiconductor... Agent: Samsung Electro-mechanics Co., Ltd.

20150144990 - Power semiconductor device and method of manufacturing the same: A power semiconductor device may include a first semiconductor region having a first conductivity type, a second semiconductor region having a second conductivity type formed on an upper portion of the first semiconductor region, a third semiconductor region having a first conductivity type formed in an inner portion of an... Agent: Samsung Electro-mechanics Co., Ltd.

20150144995 - Semiconductor device: In the reverse-conducting IGBT according to the present invention, an n-type buffer layer surrounds a p-type collector layer. A p-type separation layer surrounds an n-type cathode layer. The n-type buffer layer separates the p-type collector layer and the p-type separation layer from each other. The p-type separation layer separates the... Agent: Mitsubishi Electric Corporation

20150144988 - Semiconductor device and insulated gate bipolar transistor with barrier regions: In a semiconductor device a barrier region is sandwiched between a drift region and a charge carrier transfer region. The barrier and charge carrier transfer regions form a pn junction. The barrier and drift regions form a homojunction. A mean impurity concentration in the barrier region is at least ten... Agent: Infineon Technologies Ag

20150144996 - Semiconductor esd device and method of making same: A semiconductor device includes an SCR ESD device region disposed within a semiconductor body, and a plurality of first device regions of the first conductivity type disposed on a second device region of the second conductivity type, where the second conductivity type is opposite the first conductivity type. Also included... Agent:

20150144997 - Tunable fin-scr for robust esd protection: One embodiment of the present invention relates to a silicon-controlled-rectifier (SCR). The SCR includes a longitudinal silicon fin extending between an anode and a cathode and including a junction region there between. One or more first transverse fins traverses the longitudinal fin at one or more respective tapping points positioned... Agent:

20150144998 - Fin structure of semiconductor device: A fin structure of a semiconductor device, such as a fin field effect transistor (FinFET), and a method of manufacture, is provided. In an embodiment, trenches are formed in a substrate, and a liner is formed along sidewalls of the trenches, wherein a region between adjacent trenches define a fin.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20150145000 - Integrated circuits with shallow trench isolations, and methods for producing the same: Integrated circuits with electrical components near shallow trench isolations and methods for producing such integrated circuits are provided. The method includes forming a trench is a substrate, where the trench has a trench surface. A barrier layer including silicon and germanium is formed overlying the trench surface. A shallow trench... Agent: Globalfoundries, Inc.

20150145001 - Selective nanoscale growth of lattice mismatched materials: Exemplary embodiments provide materials and methods of forming high-quality semiconductor devices using lattice-mismatched materials. In one embodiment, a composite film including one or more substantially-single-particle-thick nanoparticle layers can be deposited over a substrate as a nanoscale selective growth mask for epitaxially growing lattice-mismatched materials over the substrate.... Agent:

20150144999 - Structure and method for finfet device with buried sige oxide: The present disclosure provides a semiconductor device that includes a substrate of a first semiconductor material; a fin feature having a first portion, a second portion and a third portion stacked on the substrate; an isolation feature formed on the substrate and disposed on sides of the fin feature; semiconductor... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20150145002 - Cmos devices with reduced leakage and methods of forming the same: A device includes a first semiconductor layer, and a second semiconductor layer over the first semiconductor layer. The first semiconductor layer and the second semiconductor layer comprise different materials. A semiconductor region is overlying and contacting the second semiconductor layer, wherein a bottom surface of the semiconductor region contacts a... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20150145003 - Finfet semiconductor devices including recessed source-drain regions on a bottom semiconductor layer and methods of fabricating the same: FinFET semiconductor devices and methods of forming the same are provided. The finFET semiconductor devices may include an insulator layer, a bottom semiconductor layer on the insulator layer, a channel fin on the bottom semiconductor layer, a source region on the bottom semiconductor layer and adjacent a first side of... Agent:

20150145004 - Semiconductor device and a method for manufacturing a semiconductor device: The characteristics of a semiconductor device are improved. A semiconductor device is formed so as to have a channel layer formed over a substrate, a barrier layer, a trench penetrating through the barrier layer in an opening region, and reaching some point of the channel layer, a gate electrode arranged... Agent: Renesas Electronics Corporation

20150145005 - Transistor amplifier circuit and integrated circuit: Disclosed is a transistor having a first region of a first conductivity type for injecting charge carriers into the transistor and a laterally extended second region) of the first conductivity type having a portion including a contact terminal for draining said charge carriers from the transistor, wherein the first region... Agent:

20150145006 - Semiconductor device and method for driving the same: The semiconductor device includes a plurality of pixels arranged in rows and columns, and first transistors fewer than the number of the plurality of pixels. The plurality of pixels each includes a photodiode and an amplifier circuit. The amplifier circuit holds the accumulated charge and includes at least a second... Agent:

20150145007 - Imaging systems with image pixels having adjustable responsivity: An imaging system may include an image sensor having an array of image pixels. Some image pixels in the array may be provided with responsivity adjustment structures. For example, broadband pixels in a pixel array may include responsivity adjustment circuitry. The responsivity adjustment circuitry may be configured to narrow the... Agent: Aptina Imaging Corporation

20150145008 - Fin capacitor employing sidewall image transfer: Spacer structures are formed around an array of disposable mandrel structures and above a doped semiconductor material portion. A sidewall image transfer process is employed to pattern an upper portion of the doped semiconductor material portion into an array of doped semiconductor fins. After formation of a dielectric material layer... Agent: International Business Machines Corporation

20150145009 - Semiconductor integrated circuit device and manufacturing method thereof: In order to achieve high-speed operation of an eDRAM, the eDRAM includes: a selection MISFET having a gate electrode that serves as a word line, a source region, and a drain region; a source plug electrode coupled to the source region; and a drain plug electrode coupled to the drain... Agent: Renesas Electronics Corporation

20150145010 - Dynamic random access memory cell employing trenches located between lengthwise edges of semiconductor fins: After formation of semiconductor fins in an upper portion of a bulk semiconductor substrate, a shallow trench isolation layer is formed, which includes a dielectric material and laterally surround lower portions of each semiconductor fin. Trenches are formed between lengthwise sidewalls of neighboring pairs of semiconductor fins. Portions of the... Agent: International Business Corporation

20150145011 - Semiconductor device: A semiconductor device may include, but is not limited to: a semiconductor substrate; a memory capacitor; and a first compensation capacitor. The semiconductor substrate has at least first and second regions. The memory capacitor is positioned over the first region. The memory capacitor may include, but is not limited to:... Agent: Ps4 Luxco S.a.r.l.

20150145013 - Semiconductor device and method for forming the same: A semiconductor device includes an active region tilted at an angle with respect to a buried bit line. The buried bit line includes a metal silicide pattern and a metal pattern. The metal silicide pattern has a plurality of metal silicide films each disposed at a lower portion of the... Agent: Sk Hynix Inc.

20150145012 - Semiconductor structure and manufacturing method of the same: A semiconductor structure is provided. The semiconductor structure includes a first stacked structure. The first stacked structure includes a first stacked portion disposed along a first direction, at least one second stacked portion connected with the first stacked portion and disposed along a second direction perpendicular to the first direction,... Agent: Macronix International Co., Ltd.

20150145015 - Three-dimensional semiconductor memory device: A three-dimensional semiconductor memory device includes stacked structures, vertical semiconductor patterns, common source regions, and well pickup regions. The stacked structures are disposed on a semiconductor layer of a first conductivity type. Each stacked structure includes electrodes vertically stacked on each other and is extended in a first direction. The... Agent:

20150145014 - Vertical memory devices: A vertical memory device includes a substrate, a first cell block and a second cell block. The substrate includes a central region and a peripheral region. At least one first cell block is on the central region. The first cell block includes a first channel and first gate lines. At... Agent:

20150145016 - Three-dimensional nonvolatile memory devices including interposed floating gates: Provided are three-dimensional nonvolatile memory devices and methods of fabricating the same. The memory devices include semiconductor pillars penetrating interlayer insulating layers and conductive layers alternately stacked on a substrate and electrically connected to the substrate and floating gates selectively interposed between the semiconductor pillars and the conductive layers. The... Agent:

20150145019 - Nonvolatile memory device: A nonvolatile memory device may include: an isolation layer formed in a substrate and defining an active region; a control plug formed over the isolation layer; a floating gate formed over the substrate and including a plurality of fingers adjacent to the control plug with a gap provided therebetween; and... Agent: Sk Hynix Inc.

20150145018 - Semiconductor devices: Provided are a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes a charge storage pattern formed on a substrate; a dielectric pattern formed on the charge storage pattern; a first conductive pattern including silicon doped with a first impurity of a first concentration, the... Agent:

20150145017 - Semiconductor structure and method for forming the same: Various embodiments provide semiconductor structures and methods for forming the same. In an exemplary method, a substrate can be provided. The substrate can have a plurality of isolation structures. A top surface of the plurality of isolation structures can be higher than a surface of the substrate. A device layer... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20150145020 - Semiconductor device and method of fabricating the same: A method of fabricating a three-dimensional (3D) semiconductor memory device is provided. Sacrificial layers and insulating layers are alternately and repeatedly stacked on a top surface of a substrate to form a thin layer structure. A channel structure penetrating the thin layer structure is formed to be in contact with... Agent:

20150145021 - Vertical memory devices and methods of manufacturing the same: Nonvolatile memory devices include at least four cylindrical-shaped channel regions, which extend vertically from portions of a substrate located at respective vertices of at least one rhomboid when viewed in a vertical direction relative to a surface of the substrate. A charge storage layer (e.g., ONO layer) is provided on... Agent:

20150145022 - Cmp fabrication solution for split gate memory embedded in hk-mg process: A semiconductor device includes a substrate, at least one logic device and a split gate memory device. The at least one logic device is located on the substrate. The split gate memory device is located on the substrate and comprises a memory gate and a select gate. The memory gate... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20150145024 - Integrated circuits having improved split-gate nonvolatile memory devices and methods for fabrication of same: Integrated circuits are provided. An exemplary integrated circuit includes a source/drain region in a semiconductor substrate. The integrated circuit includes a charge storage structure overlying the semiconductor substrate and having a first sidewall overlying the source/drain region. The integrated circuit also includes a control gate overlying the source/drain region. Further,... Agent:

20150145023 - Semiconductor device and method of manufacturing same: To provide a semiconductor device having a nonvolatile memory improved in characteristics. In the semiconductor device, a nonvolatile memory has a high-k insulating film (high dielectric constant film) between a control gate electrode portion and a memory gate electrode portion and a transistor of a peripheral circuit region has a... Agent: Renesas Electronics Corporation

20150145025 - Semiconductor device: Provided is a semiconductor device having improved performance. A semiconductor substrate is formed with unit LDMOSFET elements. The unit LDMOSFET elements have respective source regions electrically coupled to each other via a first source interconnect line and a second source interconnect line. The unit LDMOSFET elements have respective gate electrodes... Agent:

20150145027 - Method for fabricating a semiconductor device: A method for fabricating a semiconductor device is provided according to one embodiment of the present invention and includes forming an interlayer dielectric on a substrate; forming a trench surrounded by the interlayer dielectric; depositing a dielectric layer and a work function layer on a surface of the trench sequentially... Agent: United Microelectronics Corp.

20150145026 - Semiconductor device and method for forming the same: A semiconductor device including a substrate having an active region and a field-plate region therein is disclosed. At least one trench-gate structure is in the substrate. The field-plate region is at a first side of the trench-gate structure. At least one source doped region is in the substrate at a... Agent: Vanguard International Semiconductor Corporation

20150145028 - Semiconductor device with cell trench structures and contacts and method of manufacturing a semiconductor device: A semiconductor mesa is formed in a semiconductor layer between a first cell trench structure and a second cell trench structure extending from a first surface into the semiconductor layer. An opening is formed in a capping layer formed on the first surface, wherein the opening exposes at least a... Agent:

20150145029 - Semiconductor device having buried gate electrode structures: A semiconductor device includes first and second gate electrode structures and a connection plug. The first gate electrode structure is buried in a semiconductor portion and has array stripes inside a first cell array of transistor cells and a contact stripe outside the first cell array, the contact stripe structurally... Agent:

20150145030 - Semiconductor device and integrated circuit: A semiconductor device in a semiconductor substrate includes a first drain region and a second drain region, a first drift zone and a second drift zone, at least two gate electrodes in the semiconductor substrate, and a channel region between the gate electrodes. The first drift zone is arranged between... Agent:

20150145031 - Vertical-type semiconductor apparatus and fabrication method thereof: A semiconductor apparatus includes a semiconductor substrate including first and second regions, an inactive region formed in the semiconductor substrate of the second region and from a surface thereof, one or more first pillars vertically extending from the semiconductor substrate of the first region, one or more second pillars vertically... Agent: Sk Hynix Inc.

20150145032 - Field-effect transistor and method for the fabrication thereof: The invention relates to a field-effect transistor and a method for its manufacturing having at least one layer, said layer comprising a III-V compound semiconductor, wherein the compound semiconductor comprises at least one element from the chemical group III being selected from any of gallium, aluminium, indium and/or boron and... Agent:

20150145033 - Halo region formation by epitaxial growth: A structure including a semiconductor substrate including a source region and a drain region, a gate located above the semiconductor substrate and between the source region and the drain region, and two opposing halo regions being part of the source and drain regions, respectively, the halo regions being grown epitaxially,... Agent:

20150145034 - Ldmos structure and manufacturing method thereof: A LDMOS structure including a semiconductor substrate, a drain region, a lightly doped drain (LDD) region, a source region and a gate structure is provided. The substrate has a trench. The drain region is formed in the semiconductor substrate under the trench. A LDD region is formed in the semiconductor... Agent: United Microelectronics Corporation

20150145037 - High density trench-based power mosfets with self-aligned active contacts and method for making such devices: Aspects of the present disclosure describe a high density trench-based power MOSFET with self-aligned source contacts. The source contacts are self-aligned with a first insulative spacer and a second insulative spacer, wherein the first spacer is resistant to an etching process that will selectively remove the material the second spacer... Agent:

20150145036 - Power integrated circuit including series-connected source substrate and drain substrate power mosfets: A semiconductor device containing a high voltage MOS transistor with a drain drift region over a lower drain layer and channel regions laterally disposed at the top surface of the substrate. RESURF trenches cut through the drain drift region and body region parallel to channel current flow. The RESURF trenches... Agent:

20150145035 - Semiconductor device: In the interior of a semiconductor substrate having a main surface, a first p− epitaxial region is formed, a second p− epitaxial region is formed on the main surface side, and an n-type drift region and a p-type body region are formed on the main surface side. An n+ buried... Agent:

20150145038 - Super junction semiconductor device having columnar super junction regions: A super junction semiconductor device includes a semiconductor portion with a first surface and a second surface parallel to the first surface. The semiconductor portion includes a doped layer of a first conductivity type formed at least in a cell area. The super junction semiconductor device further includes columnar first... Agent:

20150145039 - Semiconductor device having drain side contact through buried oxide: A semiconductor device configured to provide high heat dissipation and improve breakdown voltage comprises a substrate, a buried oxide layer over the substrate, a buried n+ region in the substrate below the buried oxide layer, and an epitaxial layer over the buried oxide layer. The epitaxial layer comprises a p-well,... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20150145040 - Metal oxide semiconductor and method of making: A drain extended metal oxide semiconductor (MOS) includes a substrate having a semiconductor. A gate is located on the semiconductor, a source is located on the semiconductor and on one side of the gate, and a drain is located on the semiconductor and on another side of said gate. The... Agent:

20150145044 - Floating body transistor constructions, semiconductor constructions, and methods of forming semiconductor constructions: The invention includes floating body transistor constructions containing U-shaped semiconductor material slices. The U-shapes have a pair of prongs joined to a central portion. Each of the prongs contains a source/drain region of a pair of gatedly-coupled source/drain regions, and the floating bodies of the transistors are within the central... Agent:

20150145043 - Rf soi switch with backside cavity and the method to form it: An integrated circuit includes a compound semiconductor substrate having a first semiconductor substrate, an insulating layer on the first semiconductor substrate, and a second semiconductor substrate on the insulating layer, a transistor disposed on the second semiconductor substrate and having a bottom insulated by the insulating layer, a plurality of... Agent:

20150145041 - Substrate local interconnect integration with finfets: A substrate local interconnect structure and method is disclosed. A buried conductor is formed in the insulator region or on the semiconductor substrate. The buried conductor may be formed by metal deposition, doped silicon regions, or silciding a region of the substrate. Metal sidewall portions connect transistor contacts to the... Agent: International Business Machines Corporation

20150145042 - Transistors having multiple lateral channel dimensions: Fin field effect transistors or semiconductor nanowire field effect transistors having different lateral channel dimensions can be formed by providing multiple disposable gate structures, removing one type of disposable gate structures while masking at least another type of disposable gate structures, thinning physically exposed semiconductor material portions by oxidation and... Agent: International Business Machines Corporation

20150145045 - Semiconductor device and manufacturing method: A fabrication process of a semiconductor device is disclosed. The method includes providing a semiconductor substrate with a first insulation layer formed on the semiconductor substrate and a fin formed on the surface of the first insulation layer, and forming a fully-depleted semiconductor layer on sidewalls of the fin, and... Agent:

20150145046 - Semiconductor structure and method for manufacturing the same: The present invention provides a method for manufacturing a semiconductor structure, which comprises following steps: providing a substrate, which comprises upwards in order a base layer, a buried isolation layer, a buried ground layer, an ultra-thin insulating buried layer and a surface active layer; implementing ion implantation doping to the... Agent: Institute Of Microelectronics, Chinese Academy Of Sciences

20150145047 - Implementing buried fet utilizing drain of finfet as gate of buried fet: A method and circuit for implementing an enhanced transistor topology with a buried field effect transistor (FET) utilizing the drain of a FinFET as the gate of the new buried FET and a design structure on which the subject circuit resides are provided. A drain area of the fin area... Agent: International Business Machines Corporation

20150145049 - Complementary fet injection for a floating body cell: The present invention relates to a floating body memory cell comprising: a first MOS transistor and a second MOS transistor, wherein at least the second MOS transistor has a floating body; and wherein the first and second MOS transistors are configured such that charges can be moved to/from the floating... Agent:

20150145050 - Semiconductor device: A semiconductor device includes a first planar semiconductor (e.g., silicon) layer, first and second pillar-shaped semiconductor (e.g., silicon) layers, a first gate insulating film, a first gate electrode, a second gate insulating film, a second gate electrode, a first gate line connected to the first and second gate electrodes, a... Agent:

20150145051 - Semiconductor device: A semiconductor device includes a first planar semiconductor (e.g., silicon) layer, first and second pillar-shaped semiconductor (e.g., silicon) layers, a first gate insulating film, a first gate electrode, a second gate insulating film, a second gate electrode, a first gate line connected to the first and second gate electrodes, a... Agent:

20150145048 - Structure and method for forming cmos with nfet and pfet having different channel materials: Embodiments of the present invention provide an improved structure and method for forming CMOS field effect transistors. In embodiments, silicon germanium (SiGe) is formed on a PFET side of a semiconductor structure, while silicon is disposed on an NFET side of a semiconductor structure. A narrow isolation region is formed... Agent: International Business Machines Corporation

20150145052 - Circuit and method for improving esd tolerance and switching speed: Embodiments of systems, methods, and apparatus for improving ESD tolerance and switching time for semiconductor devices including metal-oxide-semiconductor (MOS) field effect transistors (FETs), and particularly to MOSFETs fabricated on semiconductor-on-insulator and silicon-on-sapphire substrates. Embodiments provide an improved FET structure having an accumulated charge sink (ACS) circuit, fast switching times, and... Agent:

20150145053 - Semiconductor integrated circuit with tsv bumps: A semiconductor integrated circuit is provided. In the semiconductor integrated circuit, each of ESD protection circuitries is disposed between two of TSV bumps arrayed in a matrix, the two being arranged adjacent to each other. First main power lines are disposed to overlap P-channel ESD protection elements. Second main power... Agent: Renesas Electronics Corporation

20150145055 - High voltage devices and method of manufacturing the same: Disclosed is a high voltage device including a substrate structure having a high voltage transistor and a lower wiring connected to the high voltage transistor, a linker structure having a supplemental insulation pattern on the substrate structure and an interconnecting linker penetrating through the supplemental insulation pattern and connected to... Agent:

20150145056 - Semiconductor device and a method for fabricating the same: A semiconductor device including: a first gate pattern disposed in a peripheral region of a substrate; a second gate pattern disposed in a cell region of the substrate; a first insulator formed on sidewalls of the first gate pattern; and a second insulator formed on sidewalls of the second gate... Agent:

20150145054 - Transistor and method for forming the same: Various embodiments provide transistors and methods for forming the same. In an exemplary method, a substrate is provided, having a dummy gate structure including a dummy gate dielectric layer on the substrate and a dummy gate layer on the dummy gate dielectric layer. A dielectric layer is formed on the... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20150145057 - Integrated multiple gate length semiconductor device including self-aligned contacts: A multi-channel semiconductor device includes a first and second gate channels formed in a semiconductor substrate. The first gate channel has a first length and the second gate channel has a second length greater than the first length. A gate dielectric layer is formed in the first and second gate... Agent: International Business Machines Corporation

20150145058 - Transistor with deep nwell implanted through the gate: A method of fabricating a CMOS integrated circuit (IC) includes implanting a first n-type dopant at a first masking level that exposes a p-region of a substrate surface having a first gate stack thereon to form NLDD regions for forming n-source/drain extension regions for at least a portion of a... Agent:

20150145059 - Methods of forming an e-fuse for an integrated circuit product and the resulting integrated circuit product: An integrated circuit product is disclosed that includes a resistor body and an e-fuse body positioned on a contact level dielectric material, wherein the resistor body and the e-fuse body are made of the same conductive material, a first plurality of conductive contact structures are coupled to the resistor body,... Agent: Globalfoundries Inc.

20150145060 - Low resistance contacts without shorting: Devices and methods of forming a device are disclosed. A substrate prepared with at least a first transistor and a second transistor is provided. Each of the first and second transistors includes a gate disposed on the substrate between first and second contact regions in the substrate. A silicide block... Agent: Globalfoundries Singapore Pte. Ltd.

20150145061 - Novel contact structure for a semiconductor device and methods of making same: A device includes first and second spaced-apart active regions positioned in a semiconducting substrate, an isolation region positioned between and separating the first and second spaced-apart active regions, and a layer of gate insulation material positioned on the first active region. A first conductive line feature extends continuously from the... Agent:

20150145063 - Field effect transistors with varying threshold voltages: A method including providing a semiconductor substrate including a first semiconductor device and a second semiconductor device, the first and second semiconductor devices including dummy spacers, dummy gates, and extension regions; protecting the second semiconductor device with a mask; removing the dummy spacers from the first semiconductor device; and depositing... Agent:

20150145062 - Variable length multi-channel replacement metal gate including silicon hard mask: A method of forming a semiconductor device includes forming first and second semiconductor structures on a semiconductor substrate. The first semiconductor structure includes a first gate channel region having a first gate length, and the second semiconductor structure including a second gate channel region having a second gate length that... Agent: International Business Machines Corporation

20150145067 - Fin structure: A fin structure includes a substrate and a fin disposed on a top surface of the substrate. The fin has a height. An epitaxial structure surrounds the fin and the epitaxial structure has a top point which is the farthest point on the epitaxial structure away from the top surface... Agent: United Microelectronics Corp.

20150145064 - Finfet having suppressed leakage current: A FinFET device which includes: a semiconductor substrate; a three dimensional fin oriented perpendicularly to the semiconductor substrate; a local trench isolation between the three dimensional fin and an adjacent three dimensional fin; a nitride layer on the local trench isolation; a gate stack wrapped around a central portion of... Agent: International Business Machines Corporation

20150145065 - Finfet isolation by selective cyclic etch: Etching interleaved structures of semiconductor material forming fins of finFETs and local isolation material interposed between the fins is performed alternately and cyclically by alternating etchants cyclically such as by alternating gases during reactive ion etching. Etchants are preferably alternated when one of the semiconductor material and the local isolation... Agent: International Business Machines Corporation

20150145070 - Merging lithography processes for gate patterning: Methods for fabricating devices on a die, and devices on a die. A method may include patterning a first region to create a first gate having a first gate length and a first contacted polysilicon pitch (CPP) with a first process. The first CPP is smaller than a single pattern... Agent: Qualcomm Incorporated

20150145071 - Methods of forming spacers on finfets and other semiconductor devices: Disclosed herein are various methods of forming spacers on FinFETs and other semiconductor devices. In one example, the method includes forming a plurality of spaced-apart trenches in a semiconducting substrate that defines a fin, forming a first layer of insulating material in the trenches that covers a lower portion of... Agent: Globalfoundries Inc.

20150145066 - Semiconductor device and method of making: A semiconductor device is provided. The semiconductor device includes a channel region disposed between a source region and a drain region, a gate structure over the channel region, an interlayer dielectric (ILD) layer proximate the gate structure, an ILD stress layer proximate the top portion of gate structure and over... Agent: Taiwan Semiconductor Manufacturing Company Limited

20150145069 - Silicon germanium finfet formation: Methods for fabricating a fin in a fin field effect transistor (FinFET), include exposing a single crystal fin structure coupled to a substrate of the FinFET. The single crystal fin structure is of a first material. The method further includes implanting a second material into the exposed single crystal fin... Agent: Qualcomm Incorporated

20150145068 - Structure of finfets: The present invention relates to a method for fabricating FinFETs and the structure thereof. The present invention uses an additional mask to define regions forming semiconductor fins having high semiconductor-fin height. By making use of multiple etching processes of the insulating layer, structures with differences in the height of semiconductor... Agent: National Applied Research Laboratories

20150145072 - Semiconductor devices and methods of fabricating the same: A MOS transistor includes a pair of impurity regions formed in a substrate as spaced apart from each other, and a gate electrode formed on a region of the substrate located between the pair of impurity regions. Each of the impurity regions is formed of a first epitaxial layer, a... Agent:

20150145073 - Low-k dielectric sidewall spacer treatment: Systems and methods are provided for fabricating a semiconductor structure including sidewall spacers. An example semiconductor structure includes: a gate structure, a first sidewall spacer, and a second sidewall spacer. The gate structure is formed over a substrate. The first sidewall spacer is adjacent to the gate structure, a top... Agent: Taiwan Semiconductor Manufacturing Company Limited

20150145074 - Mems device: A MEMS device includes a fixed electrode and a movable electrode arranged isolated and spaced from the fixed electrode by a distance. The movable electrode is suspended against the fixed electrode by one or more spacers including an insulating material, wherein the movable electrode is laterally affixed to the one... Agent:

20150145075 - Mems devices utilizing a thick metal layer of an interconnect metal film stack: A MEMS device, such as an accelerometer or gyroscope, fabricated in interconnect metallization compatible with a CMOS microelectronic device. In embodiments, a proof mass has a first body region utilizing a thick metal layer that is separated from a thin metal layer. The thick metal layer has a film thickness... Agent:

20150145077 - Method of stacking a plurality of dies to form a stacked semiconductor device, and stacked semiconductor device: A method of stacking a plurality of first dies to a respective plurality of second dies, each one of the first dies having a surface including a surface coupling region which is substantially flat, each one of the second dies having a respective surface including a respective surface coupling region... Agent:

20150145076 - Semiconductor package and manufacturing method thereof: There is provided a semiconductor package including: an application specific integrated circuit (ASIC) chip including a first bump ball and a second bump ball formed inwardly of the first bump ball; a micro electro mechanical system (MEMS) sensor electrically connected to the second bump ball; a lead frame electrically connected... Agent: Samsung Electro-mechanics Co., Ltd.

20150145079 - Semiconductor devices and methods of fabrication thereof: In one embodiment, a method of manufacturing a semiconductor device includes oxidizing a substrate to form local oxide regions that extend above a top surface of the substrate. A membrane layer is formed over the local oxide regions and the top surface of the substrate. A portion of the substrate... Agent:

20150145078 - Semiconductor package with air gap: A semiconductor package includes a semiconductor die having a first main side and a second main side opposite the first main side, the first main side having an inner region surrounded by a periphery region. The semiconductor package further includes a film covering the semiconductor die and adhered to the... Agent:

20150145081 - Magnetic memory devices having a uniform perpendicular nonmagnetic rich antisotropy enhanced pattern: Provided are magnetic memory devices, electronic systems and memory cards including the same, methods of manufacturing the same, and methods of controlling a magnetization direction of a magnetic pattern. In a magnetic memory device, atomic-magnetic moments non-parallel to one surface of a free pattern increase in the free pattern. Therefore,... Agent:

20150145080 - Memory element and memory device: There is disclosed a memory element including a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer that has a magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein an... Agent:

20150145082 - Backside-illuminated photodetector structure and method of making the same: A backside-illuminated photodetector structure comprising a first reflecting region, a second reflecting region and a semiconductor region. The semiconductor region is between the first reflecting region and the second reflecting region. The semiconductor region comprises a first doped region and a second doped region.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20150145084 - Diffraction grating with multiple periodic widths: An integrated circuit includes a substrate, a plurality of photo detectors formed in the substrate, and a diffraction grating having multiple sections disposed over the plurality of photo detectors. Each section of the diffraction grating has a respective periodic width for a respective target wavelength. The diffraction grating has at... Agent:

20150145088 - Image sensor and fabricating method thereof: A method of fabricating an image sensor is provided. The method may include preparing a substrate with first to third pixel regions, coating a first color filter layer on the substrate, sequentially forming a first sacrificial layer and a first protection layer to cover the first color filter layer, forming... Agent:

20150145085 - Image sensor and method for fabricating the same: An image sensor includes a substrate including a pixel array region and a logic region where a surface of the pixel array region is higher than a surface of the logic region, and a light shielding pattern formed over the substrate of the logic region and having a surface on... Agent: Sk Hynix Inc.

20150145087 - Manufacturing method for photoelectric conversion apparatus and photoelectric conversion apparatus: A manufacturing method for a photoelectric conversion apparatus in which a microlens is arranged for multiple electric charge accumulation regions formed on a semiconductor substrate, includes forming a first impurity region of a first conductive type on the semiconductor substrate; and forming a second impurity region of a second conductive... Agent:

20150145086 - Optical communication device, reception apparatus, transmission apparatus, and transmission and reception system: An optical communication device, reception apparatus, transmission apparatus and transmission and reception system are disclosed. The optical communication device includes a drive circuit substrate. A first through via extends through the drive circuit substrate and is configured to electrically connect an optical element disposed on a first surface side of... Agent:

20150145089 - Solid-state image sensor, method of manufacturing the same and camera: An image sensor includes a semiconductor layer having first and second faces, and a wiring structure arranged on a side of the first face, wherein photoelectric converters are arranged in the semiconductor layer and light is incident on the second face. The wiring structure includes reflection portions having reflection regions... Agent:

20150145083 - Structure of dielectric grid for a semiconductor device: An image sensor device and a method for manufacturing the image sensor device are provided. An image sensor device includes a pixel region and a non-pixel region in a substrate. In the pixel region there is a plurality of sensor elements. The non-pixel region is adjacent to the pixel region... Agent:

20150145090 - System and method for reducing dark current drift in a photodiode based electron detector: A sensing element that may include (a) a PIN diode that may include an anode that is coupled to an anode contact; a cathode that is coupled to a cathode contact; a semiconductor portion that has a sensing region; and an insulator that is positioned between the cathode contact and... Agent: Applied Materials Israel, Ltd.

20150145091 - Single-band and dual-band infrared detectors: Bias-switchable dual-band infrared detectors and methods of manufacturing such detectors are provided. The infrared detectors are based on a back-to-back heterojunction diode design, where the detector structure consists of, sequentially, a top contact layer, a unipolar hole barrier layer, an absorber layer, a unipolar electron barrier, a second absorber, a... Agent: California Institute Of Technology

20150145092 - Semiconductor device and manufacturing method thereof: A semiconductor device includes a semiconductor substrate, a photoelectric conversion element, a first isolation insulating film, and a current blocking region. The first isolation insulating film is formed around the photoelectric conversion element. The current blocking region is formed in a region between the photoelectric conversion element and the first... Agent:

20150145093 - Image sensor and method of fabricating the same: An image sensor includes a substrate having a front side and a back side, an insulating structure containing circuits on the front side of the substrate, contact holes extending through the substrate to the circuits, respectively, and a plurality of pads disposed on the backside of the substrate, electrically connected... Agent:

20150145094 - Chip package and method for forming the same: A chip package including a first substrate is provided. A plurality of first conductive pads is disposed on a first side of the first substrate. A second substrate is attached onto a second side opposite to the first side of the first substrate. The second substrate includes a micro-electric element... Agent:

20150145095 - Free-standing two-sided devices: Devices having features deposited on two sides of a device substrate and methods for making the same. The devices are useful, for example, as the components in a macroelectronic system. In a preferred embodiment, the devices are photosensors having a plurality of electrodes patterned on a first side of the... Agent:

20150145096 - Mechanisms for forming image-sensor device with epitaxial isolation feature: Embodiments of mechanisms for forming an image-sensor device are provided. The image-sensor device includes a substrate having a front surface and a back surface. The image-sensor device also includes a radiation-sensing region formed in the substrate. The radiation-sensing region is operable to detect incident radiation that enters the substrate through... Agent: Taiwan Semiconductor Manufacturing Co., Ltd

20150145097 - Photodiode with a dark current suppression junction: This invention relates to field photodiodes based on PN junctions that suffer from dark current leakage. An NBL is added to prove a second PN junction with the anode. The second PN junction is reversed biased in order to remove dark current leakage. The present solution requires no additional masks... Agent:

20150145098 - Miniature passive structures, high frequency electrostatic discharge protection networks, and high frequency electrostatic discharge protection schemes: According to various embodiments, a miniature passive structure for electrostatic discharge protection and input/output matching for a high frequency integrated circuit may be provided. The structure may include: either a transmission line or an inductor for providing at least one electrostatic discharge path; and a capacitor with a first end... Agent:

20150145099 - Formation of semiconductor device with resistors: A semiconductor device includes a semiconductor substrate, trench isolations, a sacrificial layer, a first resist protect oxide (RPO) layer, a second RPO layer and a silicide layer. The semiconductor substrate has first portions and second portions which are alternately disposed, and each of the second portions includes a first resist... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20150145102 - Methods for deep trench mim capacitor moat isolation with n+ epitaxial semiconductor wafer scheme: An integrated circuit structure provides at least one metal-insulator-metal (MIM) capacitor and a moat isolation structure wherein the number of processes required is substantially minimized and the formation of the MIM capacitor and the moat isolation structure effectively decouple while the number of processes common to the moat isolation structure... Agent: International Business Machines Corporation

20150145101 - Semiconductor arrangement with capacitor: A semiconductor arrangement includes a logic region and a memory region. The memory region has an active region that includes a semiconductor device. The memory region also has a capacitor within one or more dielectric layers over the active region. The semiconductor arrangement includes a protective ring within at least... Agent: Taiwan Semiconductor Manufacturing Company Limited

20150145100 - Semiconductor arrangment with capacitor: A semiconductor arrangement includes a logic region and a memory region. The memory region has an active region that includes a semiconductor device. The memory region also has a capacitor within one or more dielectric layers over the active region, where the capacitor is over the semiconductor device. The semiconductor... Agent: Taiwan Semiconductor Manufacturing Company Limited

20150145103 - Capacitive device and method of making the same: A capacitive device includes a well, a first dielectric layer, a first conductive layer, a cap dielectric layer, and a first electrode. The well includes a first shoulder portion having an upper surface, a second shoulder portion having an upper surface, and a first trench, sandwiched between the first and... Agent: Taiwan Semiconductor Mnaufacturing Company, Ltd.

20150145104 - Integrated capacitor and method for producing the same: An integrated capacitor includes a substrate with a first main surface area and an opposing second main surface area. A capacitor structure with a dielectric layer is integrated in the first main surface area. A compensation structure with a compensation layer is integrated in the second main surface area. The... Agent:

20150145105 - High-resistive silicon substrate with a reduced radio frequency loss for a radio-frequency integrated passive device: The application relates to a high-resistivity silicon substrate (100) with a reduced radio frequency loss for a radio frequency integrated passive device. The substrate comprising a bulk zone (110) comprising high-resistivity bulk silicon and a preserved sub-surface lattice damage zone (120b) comprising fractured silicon above the bulk zone. The lattice... Agent:

20150145106 - Electronic device manufacture using low-k dielectric materials: Materials and methods for manufacturing electronic devices and semiconductor components using low dielectric materials comprising polyimide based aerogels are described. Additional methods for manipulating the properties of the dielectric materials and affecting the overall dielectric property of the system are also provided.... Agent:

20150145107 - Semiconductor chip with electrically conducting layer: A semiconductor device includes a semiconductor chip having a first main surface, a second main surface opposite to the first main surface, and a side wall surface. An electrical contact area is exposed at the side wall surface of the semiconductor chip. An electrically conducting layer covers at least partially... Agent:

20150145108 - Microelectronic packages having radiofrequency stand-off layers and methods for the production thereof: Microelectronic packages and methods for fabricating microelectronic packages are provided. In one embodiment, the method includes producing a plurality of vertically-elongated contacts in ohmic contact with interconnect lines contained within one or more redistribution layers built over the frontside of a semiconductor die. A molded radiofrequency (RF) separation or stand-off... Agent:

20150145110 - Leadless surface mount assembly package and method of manufacturing the same: Embodiments of the present disclosure relate to a leadless surface mount assembly package, an electronic device, and a method for forming a surface mount assembly package, which package comprising: a first lead; a second lead; a chip fixed on an upper surface of the first lead; a clip coupled to... Agent:

20150145109 - Semiconductor package and method for producing the same: A semiconductor package includes a housing having a bottom surface and an upper surface and a solder pad arranged in the bottom surface of the housing. The solder pad includes a solderable through hole. The housing includes an opening extending from the through hole to the upper surface of the... Agent:

20150145111 - Electronic component with electronic chip between redistribution structure and mounting structure: An electronic component which comprises an electrically conductive mounting structure, an electronic chip on the mounting structure, an electrically conductive redistribution structure on the electronic chip, and a periphery connection structure electrically coupled to the redistribution structure and being configured for connecting the electronic component to an electronic periphery, wherein... Agent: Infineon Technologies Austria Ag

20150145112 - Electronic component: In an embodiment, an electronic component includes a housing, a die pad having a first surface and a second surface opposing the first surface, a first high voltage semiconductor device arranged on the first surface of the die pad, a further semiconductor device arranged on the second surface of the... Agent: Infineon Technologies Ag

20150145113 - Semiconductor package: A semiconductor package with reduced warpage problem is provided, including: a circuit board, having opposing first and second surfaces; a semiconductor chip, formed over a center portion of the first surface of the circuit board; a spacer, formed over a center portion of the semiconductor chip, having a second cross... Agent:

20150145114 - Thermally enhanced package with lid heat spreader: A method and apparatus are provided for manufacturing a lead frame based thermally enhanced package (9) with exposed heat spreader lid array (96) designed to be optimized for compression mold encapsulation of an integrated circuit die (94) by including a perimeter reservoir regions (97r) in each heat spreader lid (96)... Agent: Freescale Semiconductor, Inc.

20150145116 - Die stacks with one or more bond via arrays: An apparatus relating generally to a die stack is disclosed. In such an apparatus, a substrate is included. A first bond via array includes first wires each of a first length extending from a first surface of the substrate. An array of bump interconnects is disposed on the first surface.... Agent: Invensas Corporation

20150145115 - Emiconductor device and manufacturing method thereof: A semiconductor device includes a carrier, a die including a first surface and a second surface, a plurality of first conductive bumps disposed between the second surface of the carrier and the die, wherein the die is flip bonded on the carrier, and a molding disposed over the carrier and... Agent: Taiwan Semicomductor Manufacturing Company Ltd.

20150145117 - Enhanced stacked microelectronic assemblies with central contacts and improved thermal characteristics: A microelectronic assembly includes a dielectric element having oppositely-facing first and second surfaces and one or more apertures extending between the surfaces, the dielectric element further having conductive elements thereon; a first microelectronic element having a rear surface and a front surface facing the first surface of the dielectric element,... Agent: Tessera, Inc.

20150145118 - Ridged integrated heat spreader: An integrated circuit package is presented. In an embodiment, the integrated circuit package has a package substrate, an integrated circuit die attached to the package substrate, and a package level heat dissipation device, such as an integrated heat spreader, attached to the package substrate encapsulating the integrated circuit die. The... Agent:

20150145119 - Integrated circuit and fabricating method thereof: An integrated circuit and a method of fabricating the integrated circuit are provided. In various embodiments, the integrated circuit includes a first substrate, a second substrate, and a bump pad. The first substrate has at least one active device and a plurality of first metallic pads electrically connected to the... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20150145122 - Integrated circuits with internal pads: An embodiment includes an integrated circuit, comprising: a substrate; a first circuit formed on the substrate and coupled to a plurality of first pads on the substrate; and a second circuit formed on the substrate and coupled to a plurality of second pads on the substrate. The first pads are... Agent: Samsung Electronics Co., Ltd.

20150145129 - Mechanisms for forming package structure: Structures and formation methods of a package structure are provided. The package structure includes a semiconductor die and a substrate bonded to the semiconductor die through a first bonding structure and a second bonding structure therebetween. The first bonding structure and the second bonding structure are next to each other... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20150145125 - Passivation process to prevent tiw corrosion: Disclosed is an under bump metallization structure including a plurality of metal or metal alloy layers formed on chip bond pads with improved reliability due to a sacrificial metal oxide and the methods of making the under bump metallization structures.... Agent:

20150145123 - Power semiconductor module and method of manufacturing the same: Disclosed herein are a power semiconductor module and a method of manufacturing the same. The power semiconductor module includes: a substrate on which a semiconductor device is mounted; a pin positioned on the substrate and having one side electrically connected to the substrate; and a molding part formed to cover... Agent: Samsung Electro-mechanics Co., Ltd.

20150145124 - Semiconductor chips with through-silicon vias, and semiconductor packages including the same: Provided is a semiconductor device with through-silicon vias. The device includes a substrate including a lower semiconductor layer, a buried insulating layer, and an upper semiconductor layer, electronic devices on the upper semiconductor layer, a vertical electrode structure including a vertical electrode penetrating the substrate, and an electrode separation pattern... Agent:

20150145126 - Semiconductor device and method of forming compliant stress relief buffer around large array wlcsp: A semiconductor device has a stress relief buffer mounted to a temporary substrate in locations designated for bump formation. The stress relief buffer can be a multi-layer composite material such as a first compliant layer, a silicon layer formed over the first compliant layer, and a second compliant layer formed... Agent: Stats Chippac, Ltd.

20150145128 - Semiconductor device and method of forming stepped interconnect layer for stacked semiconductor die: A semiconductor device comprises a first semiconductor die. An encapsulant is disposed around the first semiconductor die. A first stepped interconnect structure is disposed over a first surface of the encapsulant. An opening is formed in the first stepped interconnect structure. The opening in the first stepped interconnect structure is... Agent: Stats Chippac, Ltd.

20150145120 - Semiconductor device having a through electrode: A semiconductor device includes a through electrode, a pad, and a bump. The through electrode penetrates a device body of the semiconductor device. The pad is disposed over an end of the through electrode to have a first overlap region and a second overlap region that overlap with a central... Agent: Sk Hynix Inc.

20150145127 - Semiconductor package: A semiconductor package is provided. In one configuration, the semiconductor package includes a substrate. A conductive trace is disposed on the substrate. A conductive pillar bump is disposed on the conductive trace, wherein the conductive bump is coupled to a die. In another configuration, a first conductive trace is disposed... Agent:

20150145121 - Thin embedded packages, methods of fabricating the same, electronic systems including the same, and memory cards including the same: An embedded package includes a core layer having a cavity, a first semiconductor chip disposed in the cavity, and bumps disposed on a top surface of the first semiconductor chip, a second semiconductor chip disposed on the first semiconductor chip and the core layer, pads disposed on a top surface... Agent: Sk Hynix Inc.

20150145133 - Apparatus for dicing interposer assembly: Apparatus for performing dicing of die on wafer interposers. Apparatuses are disclosed for use with the methods of dicing an interposer having integrated circuit dies mounted thereon. An apparatus includes a wafer carrier mounted in a frame and having a size corresponding to a silicon interposer, a fixture mounted to... Agent:

20150145132 - Ball arrangement for integrated circuit package devices: An integrated circuit package includes a ball arrangement that includes transmitter contact pairs arranged in a first portion of a ball grid array disposed in the integrated circuit package. Each of the transmitter contact pairs include transmitter differential signal contacts. Pairs of the transmitter contact pairs located adjacent to one... Agent:

20150145130 - Semiconductor packaging and manufacturing method thereof: The present disclosure provides a semiconductor package includes a contact pad, a device external to the contact pad and a solder bump on the contact pad. The device has a conductive contact pad corresponding to the contact pad. The solder bump connects the contact pad with the conductive contact pad.... Agent: Taiwan Semiconductor Manufacturing Company Ltd.

20150145131 - Substrates having ball lands, semiconductor packages including the same, and methods of fabricating semiconductor packages including the same: A package substrate includes a core layer having a first surface and a second surface which are opposite to each other, a ball land pad disposed on the first surface of the core layer, an opening that penetrates the core layer to expose the ball land pad, and a dummy... Agent: Sk Hynix Inc.

20150145134 - Method for forming recess-free interconnect structure: A method for forming an interconnect structure includes forming a dielectric material layer on a semiconductor substrate. An oxygen-rich layer is formed over the dielectric material layer. The dielectric material layer and the oxygen-rich layer are patterned to form a plurality of vias in the semiconductor substrate. A barrier layer... Agent:

20150145135 - Electrically conductive laminate structures: Some embodiments include electrical interconnects. The interconnects may contain laminate structures having a graphene region sandwiched between non-graphene regions. In some embodiments the graphene and non-graphene regions may be nested within one another. In some embodiments an electrically insulative material may be over an upper surface of the laminate structure,... Agent:

20150145136 - Vertically connected integrated circuits: In some examples, an integrated circuit (IC) includes a semiconductor substrate defining a perimeter of the integrated circuit and a castellation formed at the perimeter. The IC also may include a layer including an electrically conductive material formed on a surface of the castellation. In some examples, the layer including... Agent: Honeywell International Inc.

20150145138 - Embedded semiconductive chips in reconstituted wafers, and systems containing same: A reconstituted wafer includes a rigid mass with a flat surface and a base surface disposed parallel planar to the flat surface. A plurality of dice are embedded in the rigid mass. The plurality of dice include terminals that are exposed through coplanar with the flat surface. A process of... Agent: Intel Corporation

20150145137 - Method to provide the thinnest and variable substrate thickness for reliable plastic and flexible electronic device: An electronic device is formed by depositing polyimide on a glass substrate. A conductive material is deposited on the polyimide and patterned to form electrodes and signal traces. Remaining portions of the electronic device are formed on the polyimide. A second polyimide layer is then formed on the first polyimide... Agent: Stmicroelectronics Pte. Ltd

20150145145 - Ic embedded substrate and method of manufacturing the same: Disclosed herein is an IC embedded substrate that includes a core substrate having an opening, an IC chip provided in the opening, a lower insulating layer, and upper insulating layer. The IC chip and the core substrate is sandwiched between the lower insulating layer and the upper insulating layer. The... Agent: Tdk Corporation

20150145142 - Mechanisms for forming package structure: In accordance with some embodiments, a package structure and a method for forming a package structure are provided. The package structure includes a semiconductor die and a molding compound partially or completely encapsulating the semiconductor die. The package structure also includes a through package via in the molding compound. The... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20150145146 - Methods of exposing conductive vias of semiconductor devices and related semiconductor devices: Methods of exposing conductive vias of semiconductor devices may involve positioning a barrier material over conductive vias extending from a backside surface of a substrate to at least substantially conform to the conductive vias. A self-planarizing isolation material may be positioned on a side of the barrier material opposing the... Agent:

20150145141 - Multiple bond via arrays of different wire heights on a same substrate: An apparatus relating generally to a substrate is disclosed. In such an apparatus, a first bond via array has first wires extending from a surface of the substrate. A second bond via array has second wires extending from the surface of the substrate. The first bond via array is disposed... Agent: Invensas Corporation

20150145143 - Placement of monolithic inter-tier vias (mivs) within monolithic three dimensional (3d) integrated circuits (ics) (3dics) using clustering to increase usable whitespace: Placement of Monolithic Inter-tier Vias (MIVs) within monolithic three dimensional (3D) integrated circuits (ICs) (3DICs) using clustering to increase usable whitespace is disclosed. In one embodiment, a method of placing MIVs in a monolithic 3DIC using clustering is provided. The method comprises determining if any MIV placement clusters are included... Agent: Qualcomm Incorporated

20150145140 - Substrate-to-carrier adhesion without mechanical adhesion between abutting surfaces thereof: Wafer to carrier adhesion without mechanical adhesion for formation of an IC. In such formation, an apparatus has a bottom surface of a substrate abutting a top surface of a support platform without adhesive therebetween. A material is disposed around the substrate and on the top surface of the support... Agent: Invensas Corporation

20150145144 - Use of a conformal coating elastic cushion to reduce through silicon vias (tsv) stress in 3-dimensional integration: Integrated circuit assemblies, as well as methods for creating the same, are provided. The integrated circuit assembly includes a first chip and a second chip, including respective face surfaces, wherein the first chip and the second chip are bonded in a face-against-face contact configuration. The integrated circuit assembly includes a... Agent:

20150145139 - Word line coupling prevention using 3d integrated circuit: A memory comprises a first layer comprising a first line. The memory also comprises second layer comprising a series of bit-cells, a word line driver, and a word line coupled to the word line driver. The memory further comprises a first plurality of through vias coupling the word line to... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20150145147 - Apparatus and method for increasing bandwidths of stacked dies: A package structure includes a plurality of die carriers identical to each other. The respective features in each of the plurality of die carriers vertically overlap corresponding features in other ones of the plurality of die carriers. Each of the plurality of die carriers includes a plurality of through-substrate vias... Agent:

20150145148 - Copper ball bond interface structure and formation: An integrated circuit copper wire bond connection is provided having a copper ball (32) bonded directly to an aluminum bond pad (31) formed on a low-k dielectric layer (30) to form a bond interface structure for the copper ball characterized by a first plurality of geometric features to provide thermal... Agent: Freescale Semiconductor, Inc.

20150145149 - Semiconductor device packaging: A method of manufacturing a semiconductor device package includes encapsulating at least partially a plurality of semiconductor chips with encapsulating material to form an encapsulation body. The encapsulation body has a first main surface and a second main surface. At least one of a metal layer and an organic layer... Agent:

20150145150 - Method for manufacturing semiconductor device and alignment mark of semiconductor device: According to one embodiment, a method is disclosed for manufacturing a semiconductor device. The method can include forming a stacked layer in a memory cell region and a mark region, forming a first mask layer above the stacked layer, and forming a second mask layer above the first mask layer;... Agent: Kabushiki Kaisha Toshiba

20150145151 - Metrology method and apparatus, lithographic system, device manufacturing method and substrate: A lithographic process is used to form a plurality of target structures (92, 94) distributed at a plurality of locations across a substrate and having overlaid periodic structures with a number of different overlay bias values distributed across the target structures. At least some of the target structures comprise a... Agent: Asml Netherlands B.v.

  
05/21/2015 > 333 patent applications in 118 patent subcategories.

20150137061 - Cross-point memory and methods for fabrication of same: A method of fabricating a memory device is disclosed. In one aspect, the method comprises patterning a first conductive line extending in a first direction. The method additionally includes forming a free-standing pillar of a memory cell stack on the first conductive line after patterning the first conductive line. Forming... Agent: Micron Technology, Inc.

20150137060 - High rectifying ratio diode: Devices and methods for forming a device are disclosed. The device includes a substrate and a selector diode disposed over the substrate. The diode includes first and second terminals. The first terminal is disposed between the second terminal and the substrate. The diode includes a Schottky Barrier (SB) disposed at... Agent: Globalfoundries Singapore Pte. Ltd.

20150137065 - Memory cells and methods of forming memory cells: Some embodiments include memory cells which contain, in order; a first electrode material, a first metal oxide material, a second metal oxide material, and a second electrode material. The first metal oxide material has at least two regions which differ in oxygen concentration relative to one another. One of the... Agent:

20150137062 - Mimcaps with quantum wells as selector elements for crossbar memory arrays: Selector devices suitable for memory arrays have low leakage currents at low voltages, reducing sneak current paths for non-selected devices, and high leakage currents at high voltages, reducing voltage drops during switching. The selector device may include a non-conductive tri-layer between two electrodes. The non-conductive tri-layer may include a low-bandgap... Agent:

20150137064 - Reduction of forming voltage in semiconductor devices: This disclosure provides a nonvolatile memory device and related methods of manufacture and operation. The device may include one or more resistive random access memory (ReRAM) approaches to provide a memory device with more predictable operation. In particular, the forming voltage required by particular designs may be reduced through the... Agent:

20150137059 - Resistive random access memory (rram) with improved forming voltage characteristics and method for making: The present disclosure provides resistive random access memory (RRAM) structures and methods of making the same. The RRAM structures include a bottom electrode having protruded step portion that allows formation of a self-aligned conductive path with a top electrode during operation. The protruded step portion may have an inclination angle... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20150137063 - Resistive switching in memory cells: Methods, devices, and systems associated with oxide based memory can include a method of forming a resistive switching region of a memory cell. Forming a resistive switching region of a memory cell can include forming a metal oxide material on an electrode and forming a metal material on the metal... Agent:

20150137066 - Electronic device: An electronic device includes a memory. The memory includes a first cell array including a plurality of flash memory cells, a first peripheral circuit suitable for controlling the first cell array, a second cell array including a plurality of variable resistance memory cells, and a second peripheral circuit suitable for... Agent: Sk Hynix Inc.

20150137068 - Junctionless nano-electro-mechanical resonant transistor: A junctionless Nano-Electro-Mechanical (NEM) resonator, comprising a highly doped conductive channel connecting a drain region and a source region; the conduction channel region is movable and the overall structure is fixed at least at these two ends placed on acting the source and drain regions, respectively; at least one fixed... Agent: Ecole Polytechnique Federale De Lausanne (epfl)

20150137069 - Nanogap device with capped nanowire structures: An anti-retraction capping material is formed on a surface of a nanowire that is located upon a dielectric membrane. A gap is then formed into the anti-retraction capping material and nanowire forming first and second capped nanowire structures of a nanodevice. The nanodevice can be used for recognition tunneling measurements... Agent:

20150137067 - Nanowire mosfet with different silicides on source and drain: A nanowire field effect transistor (FET) device and method for forming a nanowire FET device are provided. A nanowire FET including a source region and a drain region is formed. The nanowire FET further includes a nanowire that connects the source region and the drain region. A source silicide is... Agent: Taiwan Semiconductor Manufacturing Company Limited

20150137071 - Nitride semiconductor light emitting device and fabrication method thereof: Provided is a nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed above the first nitride semiconductor layer; and a delta doped second nitride semiconductor layer formed above the active layer. According to the present invention, the optical power of the nitride semiconductor light... Agent:

20150137070 - Semiconductor light emitting device and method of manufacturing the same: Provided are a semiconductor light emitting device. The semiconductor light emitting device comprises a first semiconductor layer; a second semiconductor layer disposed on the first semiconductor layer; an active layer disposed between the first semiconductor layer and the second semiconductor layer; third semiconductor layer disposed on the second semiconductor layer;... Agent: Lg Innotek Co., Ltd.

20150137072 - Mask for forming semiconductor layer, semiconductor device, and method of fabricating the same: A mask for forming a semiconductor layer and a semiconductor device manufactured using the same. The mask for forming a semiconductor layer includes oblique openings. Since a semiconductor layer is formed through one or more openings, it is possible to suppress generation of threading dislocation in a vertical direction from... Agent:

20150137073 - Nanowire devices: A method of forming nanowire devices. The method includes forming a stressor layer circumferentially surrounding a semiconductor nanowire. The method is performed such that, due to the stressor layer, the nanowire is subjected to at least one of radial and longitudinal strain to enhance carrier mobility in the nanowire. Radial... Agent:

20150137074 - Graphene device including separated junction contacts and method of manufacturing the same: A graphene device including separated junction contacts and a method of manufacturing the same are disclosed. The graphene device is a field effect transistor (FET) in which graphene is used as a channel. A source electrode and a drain electrode do not directly contact the graphene channel, and junction contacts... Agent:

20150137077 - Graphene electronic device: A graphene electronic device includes a substrate, a first electrode and a second electrode provided on the substrate and spaced apart from each other, and graphene channels connecting the first electrode with the second electrode. Each of the graphene channels is separated from the substrate to have a cylindrical structure.... Agent: Electronics And Telecommunications Research Institute

20150137078 - Graphene sensor: A method for forming a sensor includes forming a channel in substrate, forming a sacrificial layer in the channel, forming a sensor having a first dielectric layer disposed on the substrate, a graphene layer disposed on the first dielectric layer, and a second dielectric layer disposed on the graphene layer,... Agent:

20150137075 - Inverter including two-dimensional material, method of manufacturing the same and logic device including inverter: Inverters including two-dimensional (2D) material, methods of manufacturing the same, and logic devices including the inverters. An inverter may include a first transistor and a second transistor that are connected to each other, and the first and second transistor layers may include 2D materials. The first transistor may include a... Agent: Samsung Electronics Co., Ltd.

20150137076 - Semiconductor device and method of manufacturing the same: A semiconductor device including a graphene layer and a method of manufacturing the same are disclosed. A method in which graphene is grown on a catalyst metal by a chemical vapor deposition or the like is known. However, the graphene cannot be used as a channel, since the graphene is... Agent: Fujitsu Limited

20150137079 - Vertical tunnel field effect transistor (fet): Among other things, one or more techniques for forming a vertical tunnel field effect transistor (FET), and a resulting vertical tunnel FET are provided herein. In an embodiment, the vertical tunnel FET is formed by forming a core over a first type substrate region, forming a second type channel shell... Agent:

20150137111 - Compound for organic optoelectronic device, organic light-emitting device containing the same, and display device including said organic light-emitting device: A compound for an organic optoelectronic device, an organic light-emitting device including the same and a display device including the organic light-emitting device are provided, and the compound for an organic optoelectronic device represented by a combination of the following Chemical Formulae 1 and 2 is provided and thus an... Agent:

20150137083 - Conjugated aromatic derivatives and organic light emitting diode using the same: Conjugated aromatic derivatives having an electron donating group and an electron accepting group at each end are provided. The conjugated aromatic derivatives of the present invention may be provided with blue light-emitting property and may be applied as a host material, a dopant material, an electron transporting material or a... Agent: National Tsing Hua University

20150137098 - Display device and method for manufacturing the same: A display device according to the present disclosure includes: a first substrate including a front surface and a rear surface, the front surface defining thereon a first region, a second region, and a third region, the rear surface defining thereon a fourth region, a fifth region, and a sixth region... Agent:

20150137108 - Functional film and organic el device: A functional film of the present invention includes a support body of which a retardation value is less than or equal to 300 nm; a protective inorganic layer which is formed on the support body; one or more combinations of an inorganic layer and an organic layer which are formed... Agent: Fujifilm Corporation

20150137094 - Material for organic electroluminescence device and organic electroluminescence device using the same: A material for an organic electroluminescence (EL) device and an organic electroluminescence (EL) device, the material being represented by Formula 1:... Agent:

20150137106 - Method for manufacturing a display unit: A method for manufacturing a display unit is provided, and the method includes forming a first insulating film, forming a plurality of first electrodes on the first insulating film, forming a second insulating film on the first electrodes, forming a plurality of openings corresponding to the first electrodes, forming a... Agent:

20150137107 - Method of fabricating a display device with step configuration in the insulating layer: A display device includes: a substrate; a plurality of light-emission elements arranged, on the substrate, in a first direction and a second direction intersecting each other, each of the light-emission elements having a first electrode layer, an organic layer including a luminous layer, and a second electrode layer which are... Agent: Sony Corporation

20150137085 - Organic el device and method for manufacturing organic el device: Provided is an organic EL device having high reliability, wherein decrease of the luminance due to the generation of a gas such as water vapor is suppressed. This organic EL device is provided with: an interlayer insulating film that is formed on a substrate; a lower electrode that is formed... Agent: Sharp Kabushiki Kaisha

20150137104 - Organic electroluminescence device and method of manufacturing the same: Provided are an organic electroluminescence device capable of enhancing reflectance of an anode, thereby resulting in improved light-emitting efficiency and a method of manufacturing the same. An anode (12), a thin film layer for hole injection (13), an insulating layer (14), an organic layer (15) including a luminescent layer (15C)... Agent:

20150137103 - Organic electroluminescence element: A light emitting device including an organic electroluminescence element is provided. The light emitting device may be a display device or a lighting device. The organic electroluminescence element includes an anode, a light emitting layer, and a cathode that are arranged in this order. An electron injection layer is arranged... Agent: Asahi Glass Company, Limited

20150137086 - Organic electroluminescence unit, method of manufacturing the same, and electronic apparatus: An organic electroluminescence unit of the present disclosure includes: a plurality of light emitting devices arranged having a pitch from 10 micrometers to 60 micrometers both inclusive, and each including a first electrode, an organic layer, and a second electrode that are laminated in order from a substrate, the organic... Agent:

20150137100 - Organic electroluminescent device: An organic electroluminescence device of the present invention adapts a new concept in its configuration to improve its efficiency in addition to obtain a high reliability and good yielding. The organic electroluminescent device having an electroluminescent film containing an organic material capable of causing an electroluminescence and being arranged between... Agent: Semiconductor Energy Laboratory Co., Ltd.

20150137080 - Organic electroluminescent materials and devices: a tetradentate ligand coordinated to an iridium core by coordinating atoms XI, X2, X3 and X4; a first monodentate ligand coordinated to the iridium core by coordinating atom Y1; and a second monodentate ligand coordinated to the iridium core by coordinating atom Y2, wherein X1, X2, X3 and X4 are... Agent: Universal Display Corporation

20150137095 - Organic electroluminescent materials and devices: Formula I, is described. In formula Ir(LA)n(LB)3−n, n is either 1 or 2; R1, R2, R4, and R5 each independently represent up to the maximum number of substitutions or no substitutions; X1, X2, X3, and X4 are each independently C or N; and at least one of X1, X2, X3,... Agent: Universal Display Corporation

20150137096 - Organic electroluminescent materials and devices: is described. In the structure of Formula I, A1 through A8 are independently carbon or nitrogen, with at least one being nitrogen; X1 is selected from the group consisting of O, S, and Se; X2 and X3 are independently selected from the group consisting of C, N, O, P, and... Agent: Universal Display Corporation

20150137105 - Organic light emitting diode display and method for manufacturing the same: An organic light emitting diode display includes a substrate; a first capacitor electrode provided over the substrate and including polysilicon; an insulating layer provided over the first capacitor electrode; and a second capacitor electrode provided over the insulating layer and including a first lower metal layer overlapping with the first... Agent:

20150137093 - Organic light emitting display device: An organic light emitting display device comprises a substrate that includes a plurality of pixel regions; a conductive line arranged on the substrate; and an anti-reflective layer arranged on the conductive line, wherein the anti-reflective layer includes an intermediate layer arranged on the conductive line and a semi-transparent layer arranged... Agent:

20150137099 - Organic light emitting display device: An organic light emitting display device comprises a driving transistor for driving an organic light emitting diode; a first transistor controlled by a scan signal and connected between a reference voltage line and a first node of the driving transistor; a second transistor controlled by the scan signal and connected... Agent:

20150137101 - Organic light emitting display device: An organic light emitting display device includes a scan line, a data line, a power supply line, and a pixel. The scan line extends in one direction. The data line crosses the scan line. The power supply line crosses the scan line and the data line. The pixel is electrically... Agent:

20150137087 - Organic light emitting element, organic el display panel, organic el display device, coated device, and method for manufacturing these: An organic light-emitting element including: a substrate; a light-emitting part above the substrate, the light-emitting part including an organic layer; and banks defining bounds of the organic layer in a direction along a main surface of the substrate. In the organic light-emitting element, in plan view, a surface of the... Agent: Panasonic Corporation

20150137090 - Organic light-emitting diode (oled) display and method of manufacturing the same: An organic light-emitting diode (OLED) display and method of manufacturing the same are disclosed. In one aspect, the OLED display includes a substrate, a thin film transistor (TFT) formed over the substrate, and a first pixel defining layer formed over the TFT and having an opening. The OLED display also... Agent:

20150137097 - Organic light-emitting diode (oled) display and method of manufacturing the same: An organic light-emitting diode (OLED) display and a method of manufacturing the OLED display are disclosed. In one aspect, the OLED display includes a substrate including a display region and a peripheral region, a first auxiliary electrode formed in the peripheral region, and a protecting electrode. The protecting electrode can... Agent:

20150137091 - Organic light-emitting diode display device and method of manufacturing the same: An organic light-emitting diode display device includes a substrate, a light-absorption layer, an active array structure, and an organic light-emitting diode. The substrate has a first and a second surface opposite to each other. The light-absorption layer is disposed on the first surface, and has at least one opening exposing... Agent:

20150137081 - Organic light-emitting display apparatus: An organic light-emitting display apparatus, including a substrate including a first subpixel region, a second subpixel region, and a third subpixel region, a first pixel electrode, a second pixel electrode, and a third pixel electrode disposed respectively in the first subpixel region, the second subpixel region, and the third subpixel... Agent: Samsung Display Co., Ltd.

20150137082 - Organic light-emitting display apparatus: Provided is an organic light-emitting display apparatus, including a substrate, a first pixel electrode, a second pixel electrode, and a third pixel electrode, disposed on the substrate separated from one another, a red emission layer disposed corresponding to the first pixel electrode, a green emission layer disposed corresponding to the... Agent: Samsung Display Co., Ltd.

20150137102 - Organic light-emitting display device and method for manufacturing organic light-emitting display device: Provided are an organic light-emitting display device and a method for manufacturing the same. A flexible substrate of the organic light-emitting display device is bent across a bend line and includes a first area, a first bending area adjacent to the first area, a second bending adjacent to the first... Agent:

20150137088 - Radiation detector with an organic photodiode: The present invention relates to a radiation detector with organic photodiodes and to a method of producing such a radiation detector. The TFT backplane (103, 104) is placed between the scintillator (101) and the organic photodiode layer stack (105, 106, 107, 108). This implies the use of transparent TFT-electronics, e.g.,... Agent: Koninklijke Philips N.v.

20150137089 - Sheet-like adhesive and organic el panel using the same: e

20150137109 - Substrate for organic electronic device: Provided are a substrate for an organic electronic device (OED), an organic electronic system, and a light. The substrate capable of forming an OED ensuring excellent performances and reliability because it may have excellent performances including light extraction efficiency, permeation of moisture or a gas from an external environment may... Agent:

20150137110 - Substrate for organic electronic device: The present application relates to a substrate for an organic electronic device, an organic electronic device, and a lighting device. In an embodiment of the present application, a substrate or an organic electronic device which may form an organic electronic device capable of ensuring performance including light extraction efficiency or... Agent:

20150137092 - Transistor structure and manufacturing method thereof: A transistor structure disposed on a substrate includes a gate electrode, an organic semiconductor layer, a gate insulation layer and a patterned metal layer. The gate insulation layer is disposed between the gate and the organic semiconductor layer. The patterned metal layer has a conductive oxidation surface and is divided... Agent:

20150137084 - Triptycene derivatives having symmetric or asymmetric substituents and organic light emitting diode using the same: Triptycene derivatives having symmetric or asymmetric substituents are provided. The triptycene derivatives of the present invention may be applied in phosphorescent lighting devices ranging from deep blue to red and may be applied as a host material, an electron transporting material or a hole transporting material. An OLED device is... Agent: National Tsing Hua University

20150137116 - Array substrate, method for manufacturing the same and display device: An array substrate includes a display area and a peripheral area adjacent to the display area; the display area includes a plurality of pixel units; each pixel unit includes a thin-film transistor (TFT) and a pixel electrode; and a drain electrode of the TFT directly contacts with the pixel electrode.... Agent:

20150137118 - Display device: To suppress fluctuation in the threshold voltage of a transistor, to reduce the number of connections of a display panel and a driver IC, to achieve reduction in power consumption of a display device, and to achieve increase in size and high definition of the display device. A gate electrode... Agent:

20150137117 - Display panel: A display panel includes a first substrate and a plurality of pixels disposed on the first substrate. At least one of the pixels includes a gate line region, an active layer, an etch stop layer, a first and second source/drain layer. The gate line region is disposed on the first... Agent:

20150137114 - Electronic device and method for manufacturing same: According to one embodiment of the present invention, an electronic device includes: a carbon layer including graphene, a thin film layer formed on the carbon layer, a channel layer formed on the thin film layer, a current cutoff layer formed between the thin film layer and the channel layer so... Agent: Snu R&db Foundation

20150137115 - Metal oxide thin film, method for manufacturing the same, and solution for metal oxide thin film: The present disclosure provides a solution for a metal oxide semiconductor thin film, including metal hydroxides dissolved in an aqueous or nonaqueous solvent and an acid/base titrant for controlling solubility of metal hydroxides. A solution is synthesized to improve stability and semiconductive performance of a device through addition of other... Agent: Industry-academic Cooperation Foundation, Yonsei University

20150137124 - Method for manufacturing semiconductor device: In a semiconductor device including a transistor in which an oxide semiconductor layer, a gate insulating layer, and a gate electrode layer on side surfaces of which sidewall insulating layers are provided are stacked in this order, a source electrode layer and a drain electrode layer are provided in contact... Agent:

20150137112 - Method for manufacturing thin-film transistor and thin-film transistor manufactured with same: The present invention provides a method for manufacturing a thin-film transistor and a thin-film transistor manufactured with same. The method includes (1) providing a substrate; (2) forming a first metal layer on the substrate and applying a masking operation to form a gate terminal; (3) forming a gate insulation layer... Agent: Shenzhen China Star Optoelectronics Technology Co., Ltd.

20150137121 - Method of manufacturing semiconductor device: A highly reliable transistor which includes an oxide semiconductor and has high field-effect mobility and in which a variation in threshold voltage is small is provided. By using the transistor, a high-performance semiconductor device, which has been difficult to realize, is provided. The transistor includes an oxide semiconductor film which... Agent:

20150137113 - Motft with un-patterned etch-stop: A method of fabricating a high mobility semiconductor metal oxide thin film transistor including the steps of depositing a layer of semiconductor metal oxide material, depositing a blanket layer of etch-stop material on the layer of MO material, and patterning a layer of source/drain metal on the blanket layer of... Agent:

20150137120 - Semiconductor device: Oxide layers which contain at least one metal element that is the same as that contained in an oxide semiconductor layer including a channel are formed in contact with the top surface and the bottom surface of the oxide semiconductor layer, whereby an interface state is not likely to be... Agent:

20150137122 - Semiconductor device: A semiconductor device in which release of oxygen from side surfaces of an oxide semiconductor film including c-axis aligned crystal parts can be prevented is provided. The semiconductor device includes a first oxide semiconductor film, a second oxide semiconductor film including c-axis aligned crystal parts, and an oxide film including... Agent:

20150137119 - Semiconductor device and method for manufacturing the same: It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer. The... Agent:

20150137123 - Semiconductor device and method for manufacturing the same: In the transistor including an oxide semiconductor film, which includes a film for capturing hydrogen from the oxide semiconductor film (a hydrogen capture film) and a film for diffusing hydrogen (a hydrogen permeable film), hydrogen is transferred from the oxide semiconductor film to the hydrogen capture film through the hydrogen... Agent:

20150137125 - Semiconductor device: A technique is provided that can prevent cracking of a protective film in the uppermost layer of a semiconductor device and improve the reliability of the semiconductor device. Bonding pads formed over a principal surface of a semiconductor chip are in a rectangular shape, and an opening is formed in... Agent: Renesas Electronics Corporation

20150137126 - Tft array substrate, manufacturing method of the same and display device: According to embodiments of the invention, a TFT array substrate, a manufacturing method of the TFT array substrate and a display device are provided. The method comprises: depositing a metal film on a substrate, and forming a gate electrode and a gate line; forming a gate insulating layer and a... Agent:

20150137127 - Display substrate and method of manufacturing the same: A display substrate includes a gate line disposed on a base substrate and extending in a direction. A data line crosses the gate line. A thin film transistor comprises a gate electrode, a semiconductor pattern, a source electrode, and a drain electrode. The thin film transistor is connected to the... Agent: Samsung Display Co., Ltd.

20150137128 - Thin-film transistor array substrate and method for repairing the same: The present disclosure disclosed a thin-film transistor array substrate and a method for repairing the same. The array substrate comprises: a substrate; a plurality of common lines, configured on the substrate; a plurality of scan lines and data lines, arranged on the substrate with each scan line and data line... Agent:

20150137132 - Electroluminescence display device: Disclosed is an electroluminescence device having a substrate, a thin film transistor over the substrate, an insulating film over the thin film transistor, an electroluminescence element over the insulating film, a passivation film over the electroluminescence element, and a counter substrate over the passivation film. The electroluminescence element is configured... Agent:

20150137131 - Flexible display apparatus and a manufacturing method thereof: A flexible display apparatus includes: a flexible substrate; a display unit on the flexible substrate; and a thin-film encapsulating layer on the display unit. The thin-film encapsulating layer includes at least one organic layer and at least one inorganic layer. The inorganic layer comprises carbon having a concentration gradient distributed... Agent: Samsung Display Co., Ltd.

20150137130 - Tft array substrate, display panel and display device: The present invention discloses a TFT array substrate, comprising: a plurality of scan lines; a plurality of data lines; pixel units located in areas defined by adjacent scan lines and adjacent data lines; wherein each of the pixel units comprises a first electrode and a second electrode stacked and insulated... Agent: Shanghai Avic Optoelectronics Co., Ltd.

20150137129 - Tft substrate and method of repairing the same: A thin film transistor (TFT) substrate includes; a substrate; a plurality of scan lines, disposed on the substrate; a plurality of data lines, disposed across the scan lines; a scan line insulting layer disposed between the scan lines and the data lines; a plurality of thin film transistors, each of... Agent: Chunghwa Picture Tubes, Ltd.

20150137133 - Forming of a heavily-doped silicon layer on a more lightly-doped silicon substrate: A method of forming a heavily-doped silicon layer on a more lightly-doped silicon substrate including the steps of depositing a heavily-doped amorphous silicon layer; depositing a silicon nitride layer; and heating the amorphous silicon layer to a temperature higher than or equal to the melting temperature of silicon.... Agent: Stmicroelectronics (crolles 2) Sas

20150137137 - Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown p-type gallium nitride as a current blocking layer: A current aperture vertical electron transistor (CAVET) with ammonia (NH3) based molecular beam epitaxy (MBE) grown p-type Gallium Nitride (p-GaN) as a current blocking layer (CBL). Specifically, the CAVET features an active buried Magnesium (Mg) doped GaN layer for current blocking purposes. This structure is very advantageous for high power... Agent: The Regents Of The University Of California

20150137141 - Gallium nitride devices: Semiconductor structures comprising a III-nitride (e.g., gallium nitride) material region and methods associated with such structures are provided. In some embodiments, the structures include an electrically conductive material (e.g., gold) separated from certain other region(s) of the structure (e.g., a silicon substrate) by a barrier material in order to limit,... Agent: International Rectifier Corporation

20150137136 - Gallium nitride semiconductor substrate with semiconductor film formed therein: A method of fabricating a single crystal gallium nitride substrate the step of cutting an ingot of single crystal gallium nitride along predetermined planes to make one or more signal crystal gallium nitride substrates. The ingot of single crystal gallium nitride is grown by vapor phase epitaxy in a direction... Agent:

20150137134 - Method and system for interleaved boost converter with co-packaged gallium nitride power devices: An electronic package includes a leadframe and a plurality of pins. The electronic package also includes a first gallium nitride (GaN) transistor comprising a source, gate, and drain and a second GaN transistor comprising a source, gate, and drain. The source of the first GaN transistor is electrically connected to... Agent: Avogy, Inc.

20150137139 - Semiconductor device and method for fabricating a semiconductor device: A semiconductor device is disclosed. In one embodiment, the semiconductor device includes two different semiconductor materials. The two semiconductor materials are arranged adjacent one another in a common plane.... Agent:

20150137135 - Semiconductor devices with integrated schotky diodes and methods of fabrication: An embodiment of a semiconductor device includes a semiconductor substrate that includes an upper surface and a channel, a gate electrode disposed over the substrate electrically coupled to the channel, and a Schottky metal layer disposed over the substrate adjacent the gate electrode. The Schottky metal layer includes a Schottky... Agent:

20150137138 - Transistor and method for producing transistor: A transistor that offers a high dielectric breakdown voltage of a gate insulating film with limited reduction of the current flowing between drain and source electrodes. The transistor has a semiconductor layer, a gate insulating film on the semiconductor layer, a gate electrode on the gate insulating film, and a... Agent: Murata Manufacturing Co., Ltd.

20150137140 - Vertical gallium nitride jfet with gate and source electrodes on regrown gate: A semiconductor structure includes a GaN substrate with a first surface and a second surface. The GaN substrate is characterized by a first conductivity type and a first dopant concentration. A first electrode is electrically coupled to the second surface of the GaN substrate. The semiconductor structure further includes a... Agent:

20150137147 - Cmos with dual raised source and drain for nmos and pmos: An apparatus and a method for creating a CMOS with a dual raised source and drain for NMOS and PMOS. The spacers on both stack gates are of equal thickness. In this method, a first insulating layer is formed on the surface. The first region is then masked while the... Agent:

20150137142 - Junction field effect transistor cell with lateral channel region: A semiconductor device includes a junction field effect transistor cell with a top gate region, a lateral channel region and a buried gate region. The lateral channel region is arranged between the top gate region and the buried gate region along a vertical direction with respect to a first surface... Agent:

20150137143 - Junction field effect transistor cell with lateral channel region: A junction field effect transistor cell of a semiconductor device includes a top gate region, a lateral channel region and a buried gate region arranged along a vertical direction. The lateral channel region includes first zones of a first conductivity type and second zones of a second conductivity type which... Agent:

20150137144 - Predetermined kerf regions and methods of fabrication thereof: In one embodiment, the semiconductor die includes a selective epitaxial layer including device regions, and a masking structure disposed around sidewalls of the epitaxial layer. The masking structure is part of an exposed surface of the semiconductor die.... Agent: Infineon Technologies Ag

20150137145 - Semiconductor device and semiconductor device manufacturing method: The invention provides an ultra-low-on-resistance, excellent-reliability semiconductor device that can finely be processed using SiC and a semiconductor device producing method. A semiconductor device includes: a silicon carbide substrate; a first-conductive-type first silicon carbide layer provided on a first principal surface of the silicon carbide substrate; a second-conductive-type first silicon... Agent:

20150137146 - Transistor device: Various embodiments provide transistor devices and fabrication methods. An exemplary transistor device with improved carrier mobility can be formed by first forming a confining layer on a semiconductor substrate to confine impurity ions diffused from the semiconductor substrate to the confining layer. An epitaxial silicon layer can be formed on... Agent:

20150137148 - Optical sensor package: One or more embodiments are directed to system in package (SiP) for optical devices, including proximity sensor packaging. One embodiment is directed to an optical package that includes a stacked arrangement with a plurality of optical devices arranged over an image sensor processor die that is coupled to a first... Agent: Stmicroelectronics Pte Ltd.

20150137154 - Display device and method for manufacturing the same: It is an object of the present invention to provide a display device preventing the external invasion of water and/or oxygen and preventing the deterioration of a luminous element due to these invading substances and to provide a production method including simple production steps for producing the display device. The... Agent: Semiconductor Energy Laboratory Co., Ltd.

20150137151 - High power leds: LED chips and packages are disclosed having lenses made of materials that resist degradation at higher operation temperatures and humidity, and methods of fabricating the same. The lenses can be made of certain materials that can withstand high temperatures and high humidity, with the lenses mounted to the LED prior... Agent:

20150137149 - Led module and method of preparing the led module, lighting device: An LED module includes a submount having a face in a thickness direction thereof, an LED chip bonded to the face of the submount with a first bond, and a patterned wiring circuit electrically connected to the LED chip. The first bond transmits light emitted from the LED chip. The... Agent: Panasonic Corporation

20150137152 - Light emitting element and light emitting element array: A light emitting element includes a semiconductor including an active layer, and a planar shape of the light emitting elements including a concave polygon. The planar shape of the concave polygon has interior angles including at least one acute angle.... Agent: Nichia Corporation

20150137153 - Method for integrating a light emitting device: Light emitting devices and methods of integrating micro LED devices into light emitting device are described. In an embodiment a light emitting device includes a reflective bank structure within a bank layer, and a conductive line atop the bank layer and elevated above the reflective bank structure. A micro LED... Agent:

20150137150 - Vertical multi-junction light emitting diode: An embodiment of the invention comprises a first III-V semiconductor structure including a first light emitting layer disposed between a first n-type region and a first p-type region, and a second III-V semiconductor structure including a second light emitting layer disposed between a second n-type region and a second p-type... Agent:

20150137155 - Semiconductor light source comprising a first and second light-emitting diode chip and a first and second phosphor fluorescent substance: A semiconductor light source comprising first and second light-emitting diode chips; and a conversion element containing a first phosphor and a second phosphor, wherein the conversion element is disposed downstream of the first and second light-emitting diode chips. The first light-emitting diode chip emits electromagnetic radiation with a first emission... Agent:

20150137156 - Semiconductor light emitting device including gaas substrate: A semiconductor light emitting device including: a substrate made of GaAs; and a semiconductor layer formed on the substrate, in which part of the substrate on a side opposite to the semiconductor layer is removed by etching so that the semiconductor light emitting device has a thickness of not more... Agent:

20150137166 - Epoxy resin composition for optical semiconductor device and optical semiconductor device using the same: The present invention relates to an epoxy resin composition for an optical semiconductor device having an optical semiconductor element mounting region and having a reflector that surrounds at least a part of the region, the epoxy resin composition being an epoxy resin composition for forming the reflector, the epoxy resin... Agent: Nitto Denko Corporation

20150137157 - Illuminating device: An illuminating device including a substrate, a light-emitting diode element disposed on the substrate, an electrode element, and a sealing ring. The substrate has a groove, and the electrode element has a retaining slot disposed in the groove. The sealing ring is embedded into the retaining slot and a part... Agent: Lextar Electronics Corporation

20150137163 - Led cap containing quantum dot phosphors: An LED device has a cap containing one or more quantum dot (QD) phosphors. The cap may be sized and configured to be integrated with standard LED packages. The QD phosphor may be held within the well of the LED package, so as to absorb the maximum amount of light... Agent:

20150137158 - Led package frame and led package structure: A light-emitting diode (LED) package frame is provided, including a leadframe and an insulating member. The leadframe includes a first electrode and a second electrode separated from each other. The insulating member is disposed between the first electrode and the second electrode for insulation between the first and second electrodes,... Agent: Lextar Electronics Corporation

20150137161 - Light-emitting device: Since, for example, a printed resistance 16, as a protective element, is formed on at least the top surface side, the back surface side, or the inside of an insulating film 2 and, for example, the printed resistance 16, as a protective element, is formed on the rear surface side... Agent:

20150137165 - Light-emitting device: A light-emitting device includes a mounting board, a light-emitting element mounted on a main face of the mounting board, and a sealing member covering the light-emitting element. The sealing member includes a first sealing layer covering a part of the main face of the mounting board and the light-emitting element,... Agent: Panasonic Intellectual Property Management Co., Ltd.

20150137167 - Light-emitting device: A light-emitting device, comprises a light-emitting stacked layer comprising a first conductivity type semiconductor layer; a light-emitting layer formed on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer formed on the light-emitting layer and comprising a first plurality of cavities; a first planarization layer formed... Agent:

20150137159 - Light-emitting device, light-emitting device package, and light unit: A light-emitting device, according to one embodiment, comprises: a light-emitting structure comprising a first conductive semiconductor layer, an active layer which is underneath the first conductive semiconductor layer, and a second conductive semiconductor layer which is underneath the active layer; a reflective electrode, which is arranged under the light-emitting structure;... Agent:

20150137160 - Light-emitting device, light-emitting device package, and light unit: A light-emitting device, according to one embodiment, comprises: a transparent conductive oxide film; an active layer which comes into contact with a lower surface of the transparent conductive oxide layer; a first conductive semiconductor layer which comes into contact with a lower surface of the active layer; a reflective electrode... Agent:

20150137162 - Optoelectronic semiconductor component with sapphire flip-chip: An optoelectronic semiconductor component has a volume-emitting sapphire flip-chip with an upper side and a lower side. This optoelectronic semiconductor component is embedded in an optically transparent mold body with an upper side and a lower side.... Agent:

20150137164 - Semiconductor light emitting device and method for manufacturing the same: Provided is a semiconductor light emitting device 1 includes a semiconductor stacked layer 2 having a light extraction surface 3a perpendicular to a stacked surface of the semiconductor stacked layer 2, a light transmissive light guide member 3 disposed on the semiconductor stacked Layer 2, a light reflective member 4... Agent:

20150137168 - Wavelength-converting light emitting diode (led) chip and led device equipped with chip: A wavelength-converted light emitting diode (LED) chip is provided. The wavelength-converted LED chip includes an LED chip and a wavelength-converted layer. The LED chip emits light in a predetermined wavelength region. The wavelength-converted layer is formed of a resin containing phosphor bodies of at least one kind which convert a... Agent:

20150137169 - Semiconductor light-emitting device: A semiconductor light-emitting device comprises a semiconductor stack having a first surface, wherein the first surface comprises multiple protrusion portions and multiple concave portions; a first electrode on the first surface and electrically connecting with the semiconductor stack; a second electrode on the first surface and electrically connecting with the... Agent:

20150137170 - Semiconductor light-emitting element and manufacturing method for the same: A semiconductor light-emitting element includes a substrate, a first metal layer, a second metal layer, a translucent conductive layer, and a semiconductor layer with a light-emitting region. The translucent conductive layer includes an end face intersecting a plane orthogonal to the thickness direction of the substrate. The substrate includes an... Agent:

20150137171 - Curable composition: Provided are a curable composition and its use. The curable composition has excellent processability, workability and adhesiveness, exhibits excellent light extraction efficiency, crack resistance, hardness, thermal and shock resistance and adhesiveness after curing, has long-lasting durability and reliability even under harsh conditions, and does not cause whitening or surface stickiness.... Agent: Lg Chem, Ltd.

20150137172 - Polycarbosilane and curable compositions for led encapsulants comprising same: o

20150137173 - Nitride semiconductor light-emitting element: A nitride semiconductor light-emitting element including a high concentration silicon-doped layer doped with silicon at a high concentration of 2×1019 atoms/cm3, and a dislocation reduction layer for laterally bending a threading dislocation on the high concentration silicon-doped layer.... Agent:

20150137174 - Methods and apparatus for increased holding voltage in silicon controlled rectifiers for esd protection: Methods and apparatus for increased holding voltage SCRs. A semiconductor device includes a semiconductor substrate of a first conductivity type; a first well of the first conductivity type; a second well of a second conductivity type adjacent to the first well, an intersection of the first well and the second... Agent:

20150137175 - Charge reservoir igbt top structure: An IGBT device includes one or more trench gates disposed over a semiconductor substrate and a floating body region of the first conductivity type disposed between two neighboring trench gates and between a semiconductor substrate and a heavily doped top region of the second conductivity type. A body region of... Agent: Alpha And Omega Semiconductor Incorporated

20150137177 - Semiconductor device having polysilicon plugs with silicide crystallites: A semiconductor device includes a field effect transistor structure having source zones of a first conductivity type and body zones of a second conductivity type which is the opposite of the first conductivity type, the source zones adjoining a first surface of a semiconductor die comprising the source and the... Agent:

20150137176 - Semiconductor power device: A semiconductor power device is provided, comprising a substrate of a first conductive type, a buffering layer of a second conductive type formed on the substrate, a voltage supporting layer formed on the buffering layer, and alternating sections of different conductive types formed at the substrate. The voltage supporting layer... Agent: United Microelectronics Corp.

20150137178 - Metal-semiconductor-metal (msm) heterojunction diode: In one aspect, a diode comprises: a semiconductor layer having a first side and a second side opposite the first side, the semiconductor layer having a thickness between the first side and the second side, the thickness of the semiconductor layer being based on a mean free path of a... Agent:

20150137180 - Finfet with bottom sige layer in source/drain: A FinFET includes a substrate, a fin structure on the substrate, a source in the fin structure, a drain in the fin structure, a channel in the fin structure between the source and the drain, a gate dielectric layer over the channel, and a gate over the gate dielectric layer.... Agent:

20150137179 - Power device: A power device disclosed herein comprises a substrate, a first semiconductor layer formed on the substrate, a second semiconductor layer formed on the first semiconductor layer and comprising a first element of group III, a third semiconductor layer formed on the second semiconductor layer and a plurality of first interlayers... Agent: Epistar Corporation

20150137183 - Controlling the shape of source/drain regions in finfets: An integrated circuit structure includes a fin field-effect transistor (FinFET) including a semiconductor fin over and adjacent to insulation regions; and a source/drain region over the insulation regions. The source/drain region includes a first and a second semiconductor region. The first semiconductor region includes silicon and an element selected from... Agent:

20150137182 - Semiconductor device having v-shaped region: Among other things, a semiconductor device or transistor and a method for forming the semiconductor device are provided for herein. The semiconductor device comprises one or more v-shaped recesses in which stressed monocrystalline semiconductor material, such as silicon germanium, is grown, to form at least one of a source or... Agent:

20150137181 - Stress inducing contact metal in finfet cmos: A method of forming a semiconductor structure includes forming a first plurality of fins in a first region of a semiconductor substrate and a second plurality of fins in a second region of a semiconductor substrate. A gate structure is formed covering a first portion of the first and second... Agent: International Business Machines Corporation

20150137184 - Semiconductor device and method of manufacturing a semiconductor device: A method of manufacturing a semiconductor device includes laminating and forming an electron transit layer, an electron supplying layer, an etching stop layer, and a p-type film on a substrate sequentially, the p-type film being formed of a nitride semiconductor material that includes Al doped with an impurity element that... Agent:

20150137186 - Formation of an asymmetric trench in a semiconductor substrate and a bipolar semiconductor device having an asymmetric trench isolation region: Disclosed is a trench formation technique wherein an opening having a first sidewall with planar contour and a second sidewall with a saw-tooth contour is etched through a semiconductor layer and into a semiconductor substrate. Then, a crystallographic wet etch process expands the portion of the opening within the semiconductor... Agent: International Business Machines Corporation

20150137185 - Heterojunction bipolar transistors with an airgap between the extrinsic base and collector: Fabrication methods, device structures, and design structures for a heterojunction bipolar transistor. A collector is formed in a semiconductor substrate, an intrinsic base is formed on the semiconductor substrate, and an extrinsic base is formed on the intrinsic base. An airgap is located vertically between the extrinsic base and the... Agent: International Business Machines Corporation

20150137187 - Semiconductor wafer, manufacturing method of semiconductor wafer and method for maunfacturing composite wafer: A semiconductor wafer comprises, on a semiconductor crystal layer forming wafer, a first semiconductor crystal layer, a second semiconductor crystal layer, and a third semiconductor crystal layer in this order, wherein both the etching rates of the first semiconductor crystal layer and the third semiconductor crystal layer by a first... Agent: Sumitomo Chemical Company, Limited

20150137188 - Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus: A solid-state imaging device including a photoelectric conversion element operable to generate electric charge according to the amount of incident light and to accumulate the electric charge in the inside thereof, an electric-charge holding region in which the electric charge generated through photoelectric conversion by the photoelectric conversion element is... Agent:

20150137189 - Cnt-based sensors: devices, processes and uses thereof: Disclosed herein are methods of preparing and using doped MWNT electrodes, sensors and field-effect transistors. Devices incorporating doped MWNT electrodes, sensors and field-effect transistors are also disclosed.... Agent:

20150137191 - Field effect transistor-based bio-sensor: An apparatus comprises: a sensing element formed on a buried oxide layer of a substrate and providing communication between a source region and a drain region; a gate dielectric layer on the sensing element, the gate dielectric layer defining a sensing surface on the sensing element; a passive surface surrounding... Agent:

20150137190 - Hydrogen ion sensor: Provided is a hydrogen ion sensor including: a substrate having a well and a first contact, the well having a second, a third, a fourth and a fifth contacts, the second contact having the same conductive type as the well, and the third, the fourth, and the fifth contacts having... Agent:

20150137192 - High voltage junction field effect transistor: The present invention discloses a high voltage JFET. The high voltage JFET includes a second conductivity type drift region located on the first conductivity type epitaxial layer; a second conductivity type drain heavily doped region located in the second conductivity type drift region; a drain terminal oxygen region located on... Agent:

20150137193 - Finfet structures with fins recessed beneath the gate: A semiconductor structure may include a semiconductor fin, a gate over the semiconductor fin, a spacer on a sidewall of the gate, an angled recess region in an end of the semiconductor fin beneath the spacer, and a first semiconductor region filling the angled recess. The angled recess may be... Agent: International Business Machines Corporation

20150137195 - Gate protection caps and method of forming the same: A structure includes a substrate, a gate structure over the substrate, a dielectric layer over the substrate, and a cap over a gate electrode of the gate structure. Top surfaces of the dielectric layer and gate electrode are co-planar. The gate structure extends a gate lateral distance between first and... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20150137198 - In-situ doping of arsenic for source and drain epitaxy: A method includes forming a gate stack over a semiconductor region, and recessing the semiconductor region to form a recess adjacent the gate stack. A silicon-containing semiconductor region is epitaxially grown in the recess to form a source/drain stressor. Arsenic is in-situ doped during the step of epitaxially growing the... Agent:

20150137194 - Inverted contact and methods of fabrication: An inverted contact and methods of fabrication are provided. A sacrificial layer is patterned in an inverted trapezoid shape, and oxide is deposited around the pattern. The sacrificial layer is removed, and a metal contact material is deposited, taking an inverted-trapezoid shape. Embodiments of the present invention provide an inverted... Agent: Globalfoundries Inc.

20150137196 - Metal oxide semiconductor transistor and manufacturing method thereof: The present invention provides a MOS transistor, including a substrate, a gate oxide, a gate, a source/drain region and a silicide layer. The gate oxide is disposed on the substrate and the gate is disposed on the gate oxide. The source/drain region is disposed in the substrate at two sides... Agent:

20150137197 - Semiconductor structure having trimming spacers: A semiconductor structure includes a substrate, a gate electrode disposed on the substrate, wherein the gate electrode has a first top surface. Agate dielectric layer is disposed between the substrate and the gate electrode. A silicon carbon nitride spacer surrounds the gate electrode, wherein the silicon carbon nitride spacer has... Agent:

20150137199 - Solid-state imaging device: A solid-state imaging device according to the present disclosure includes: a charge storage region that stores a signal charge obtained through photoelectric conversion in a photoelectric conversion film; an amplification transistor that amplifies the signal charge stored in the charge storage region in a corresponding pixel; a contact plug that... Agent:

20150137200 - Hybrid domain wall-hall cross device: A hybrid domain wall Hall cross device consists of a semiconductor Hall cross having a top surface and a pair of arms intersecting at a center region, and a ferromagnetic wire fabricated on the top surface, electrically isolated from the Hall cross, and having a constriction proximate to the center... Agent: The Government Of The United States Of America, As Represented By The Secretary Of The Navy

20150137202 - Cell-based ic layout system and cell-based ic layout method: A decoupling capacitor cell includes: a first decoupling capacitor formed by only a pMOS transistor; and a second decoupling capacitor formed by two metal layers. The decoupling capacitor cell is arranged in an unused region not occupied by basic cells in a cell-based IC and is connected to a power... Agent:

20150137201 - High density linear capacitor: A methods for fabricating a capacitor structure includes fabricating polysilicon structures on a semiconductor substrate. The method further includes fabricating M1 to diffusion (MD) interconnects on the semiconductor substrate. The polysilicon structures are disposed in an interleaved arrangement with the MD interconnects. The method also includes selectively connecting the interleaved... Agent: Qualcomm Incorporated

20150137203 - Forming finfet cell with fin tip and resulting device: Methods for forming a variable fin FinFET cell that can withstand a larger voltage without gate oxide breakdown at a fin tip and the resulting devices are disclosed. A plurality of fins is formed above a substrate, a portion of a fin is removed, forming a fin tip, a first... Agent: Globalfoundries Inc.

20150137204 - Memory circuit structure and semiconductor process for manufacturing the same: A semiconductor process for manufacturing particular patterns includes the steps of forming a target layer and evenly-spaced core bodies on a substrate, conformally forming a hard mask layer, forming a first photoresist covering a predetermined region on the hard mask layer wherein the predetermined region encompasses at least two core... Agent: Powerchip Technology Corporation

20150137205 - Memory device: According to example embodiments, a memory device includes a substrate, a channel region on the substrate, a plurality of gate electrode layers stacked on each other on the substrate, and a plurality of contact plugs. The gate electrode layers are adjacent to the channel region and extend in one direction... Agent:

20150137207 - Flash memory embedded with hkmg technology: An integrated circuit structure includes a flash memory cell and a logic MOS device. The flash memory cell includes a floating gate dielectric, a floating gate overlying the floating gate dielectric, a control gate overlying the floating gate, a word-line on a first side of the floating gate and the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20150137206 - Hk embodied flash memory and methods of forming the same: A method includes forming a selection gate and a control gate for a flash memory cell in a memory device region. The selection gate and the control gate are over a semiconductor substrate. A protection layer is formed to cover the selection gate and the control gate. Stacked layers are... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20150137208 - Nand string containing self-aligned control gate sidewall cladding: A method of making a NAND string includes forming a tunnel dielectric over a semiconductor channel, forming a charge storage layer over the tunnel dielectric, forming a blocking dielectric over the charge storage layer, and forming a control gate layer over the blocking dielectric. The method also includes patterning the... Agent:

20150137214 - Methods of forming semiconductor structures including bodies of semiconductor material: Semiconductor structures that include bodies of a semiconductor material spaced apart from an underlying substrate. The bodies may be physically separated from the substrate by at least one of a dielectric material, an open volume and a conductive material. The bodies may be electrically coupled by one or more conductive... Agent:

20150137212 - Nonvolatile semiconductor memory device and method for manufacturing the same: On a silicon substrate is formed a stacked body by alternately stacking a plurality of silicon oxide films and silicon films, a trench is formed in the stacked body, an alumina film, a silicon nitride film and a silicon oxide film are formed in this order on an inner surface... Agent: Kabushiki Kaisha Toshiba

20150137213 - Nonvolatile semiconductor storage device: According to one embodiment, a control gate is formed on the semiconductor substrate and includes a cylindrical through hole. A block insulating film, a charge storage film, a tunnel insulating film, and a semiconductor layer are formed on a side surface of the control gate inside the through hole. The... Agent: Kabushiki Kaisha Toshiba

20150137209 - Semiconductor device and method of manufacturing the same: A semiconductor device includes a first channel layer, a second channel layer protruding from the first channel layer, a pipe gate including a silicide area surrounding the first channel layer, a tunnel insulating layer surrounding the second channel layer, a data storage layer surrounding the second channel layer with the... Agent: Sk Hynix Inc.

20150137211 - Semiconductor device manufacturing method and semiconductor device: A semiconductor device manufacturing method includes: forming an element isolation insulating film in a semiconductor substrate; forming a first film on a surface of the semiconductor substrate; forming a second film on the element isolation insulating film and on the first film; forming a first resist pattern that includes a... Agent:

20150137210 - Vertical memory devices and methods of manufacturing the same: A method of manufacturing a vertical memory device includes forming alternating and repeating insulating interlayers and sacrificial layers on a substrate, the sacrificial layers including polysilicon or amorphous silicon, forming channel holes through the insulating interlayers and the sacrificial layers, forming channels in the channel holes, etching portions of the... Agent:

20150137215 - Semiconductor device: A semiconductor memory array includes a first nonvolatile memory cell having a first charge storage layer and a first gate electrode and a second nonvolatile memory cell, adjacent to the first memory cell in a first direction, having a second charge storage layer and a second gate electrode. The first... Agent:

20150137219 - Semiconductor device: A semiconductor device includes a fin-shaped silicon layer and a pillar-shaped silicon layer on the fin-shaped silicon layer, where a width of the pillar-shaped silicon layer is equal to a width of the fin-shaped silicon layer. Diffusion layers reside in upper portions of the pillar-shaped silicon layer and fin-shaped silicon... Agent: Unisantis Electronics Singapore Pte. Ltd.

20150137218 - Semiconductor device with surrounding gate transistor: A method for producing a semiconductor device includes a first step of forming a fin-shaped silicon layer on a silicon substrate using a first resist and forming a first insulating film therearound; and a second step of forming a second insulating film around the fin-shaped silicon layer and etching the... Agent:

20150137217 - Semiconductor power modules and devices: An electronic component is described which includes a first transistor encased in a first package, the first transistor being mounted over a first conductive portion of the first package, and a second transistor encased in a second package, the second transistor being mounted over a second conductive portion of the... Agent:

20150137216 - Vertical memory devices and methods of manufacturing the same: A vertical memory device includes a substrate, a channel, gate lines and a connecting portion. A plurality of the channels extend in a first direction which is vertical to a top surface of a substrate. A plurality of the gate lines are stacked in the first direction to be spaced... Agent:

20150137220 - Field effect transistor, termination structure and associated method for manufaturing: The present disclosure discloses a field effect transistor (“FET”), a termination structure and associated method for manufacturing. The termination structure for the FET includes a plurality of termination cells arranged substantially in parallel from an inner side toward an outer side of a termination area of the FET. Each of... Agent: Chengdu Monolithic Power Systems Co., Ltd.

20150137221 - Semiconductor device and method for manufacturing same: A semiconductor device includes: a substrate with an off-angle; an SiC layer provided on a principal surface of the substrate, including an n type drift region, and having a trench whose bottom is located in the drift region; and a gate electrode provided in the trench in the SiC layer.... Agent:

20150137222 - Stress-reduced field-effect semiconductor device and method for forming therefor: A field-effect semiconductor device is provided. The field-effect semiconductor device includes a semiconductor body with a first surface defining a vertical direction. In a vertical cross-section the field-effect semiconductor device further includes a vertical trench extending from the first surface into the semiconductor body and comprising a field electrode, a... Agent:

20150137225 - Oxide terminated trench mosfet with three or four masks: An oxide termination semiconductor device may comprise a plurality of gate trenches, a gate runner, and an insulator termination trench. The gate trenches are located in an active region. Each gate trench includes a conductive gate electrode. The insulator termination trench is located in a termination region that surrounds the... Agent:

20150137224 - Semiconductor device, integrated circuit and method of forming a semiconductor device: A semiconductor device comprises a transistor formed in a semiconductor body having a first main surface. The transistor comprises a source region, a drain region, a channel region, a drift zone, a source contact electrically connected to the source region, a drain contact electrically connected to the drain region, and... Agent:

20150137223 - Transistor component: A transistor component includes a semiconductor body, a first main electrode, a gate contact electrode, a plurality of transistor cells, and a plurality of gate electrodes. The semiconductor body has a drain region and a drift region of a first conduction type, and a body region of a second conduction... Agent:

20150137227 - High frequency switching mosfets with low output capacitance using a depletable p-shield: Aspects of the present disclosure describe a high density trench-based power MOSFETs with self-aligned source contacts and methods for making such devices. The source contacts are self-aligned with spacers and the active devices may have a two-step gate oxide. A lower portion may have a thickness that is larger than... Agent:

20150137226 - Semiconductor device and method for producing a semiconductor device: A semiconductor device includes a semiconductor substrate having first regions of a first conductivity type and body regions of the first conductivity type, which are arranged in a manner adjoining the first region and overlap the latter in each case on a side of the first region which faces a... Agent:

20150137228 - Semiconductor structure: A semiconductor structure is provided. The semiconductor structure comprises a substrate, a deep well formed in the substrate, a first well and a second well formed in the deep well, a gate electrode formed on the substrate and disposed between the first well and the second well, a first isolation,... Agent: United Microelectronics Corp.

20150137229 - Semiconductor device and method for fabricating the same: The invention provides a semiconductor device, including: a substrate having a first conductivity type, including: a body region having the first conductivity type; a source region formed in the body region; a drift region having a second conductivity type adjacent to the body region, wherein the first conductivity type is... Agent: Vanguard International Semiconductor Corporation

20150137232 - Lateral double diffused metal oxide semiconductor device and manufacturing method thereof: The present invention discloses a lateral double diffused metal oxide semiconductor (LDMOS) device and a manufacturing method thereof. The LDMOS device includes: drift region, an isolation oxide region, a first oxide region, a second oxide region, a gate, a body region, a source, and a drain. The isolation oxide region,... Agent: Richtek Technology Corporation

20150137231 - Lateral double diffused metal-oxide-semiconductor device and method for fabricating the same: A lateral double diffused metal-oxide-semiconductor device includes: a semiconductor substrate; an epitaxial semiconductor layer disposed over the semiconductor substrate; a gate structure disposed over the epitaxial semiconductor layer; a first doped region disposed in the epitaxial semiconductor layer at a first side of the gate structure; a second doped region... Agent: Vanguard International Semiconductor Corporation

20150137230 - Laterally diffused metal oxide semiconductor and manufacturing method thereof: A laterally diffused metal oxide semiconductor (LDMOS) and a manufacturing method thereof are provided. The LDMOS includes a substrate, a gate, a first well and a shallow trench isolation (STI). The gate is disposed above the substrate. The gate has a first gate region having a first dopant type and... Agent: United Microelectronics Corp.

20150137233 - High voltage device fabricated using low-voltage processes: A high-voltage transistor includes an active region including a diffused region of a first conductivity type defined by inner edges of a border of shallow trench isolation. A gate having side edges and end edges is disposed over the active region. Spaced apart source and drain regions of a second... Agent: Microsemi Soc Corporation

20150137235 - Finfet semiconductor device having local buried oxide: There is set forth herein in one embodiment a FinFET semiconductor device having a fin extending from a bulk silicon substrate, wherein there is formed wrapped around a portion of the fin a gate, and wherein proximate a channel area of the fin aligned to the gate there is formed... Agent: Globalfoundries Inc

20150137238 - High-frequency semiconductor device and method of manufacturing the same: A high-frequency semiconductor device, wherein on one surface of a semiconductor substrate, a first insulating layer, an undoped epitaxial polysilicon layer in a state of column crystal, a second insulating layer, and a semiconductor layer are formed in order from a side of the one surface, and a high-frequency transistor... Agent: Sony Corporation

20150137242 - Insulation wall between transistors on soi: An insulation wall separating transistors formed in a thin semiconductor layer resting on an insulating layer laid on a semiconductor substrate, this wall being formed of an insulating material and comprising a wall crossing the thin layer and the insulating layer and penetrating into the substrate, and lateral extensions extending... Agent:

20150137234 - Mechanisms for forming semiconductor device structure with floating spacer: Embodiments of mechanisms for forming a semiconductor device structure with floating spacers are provided. The semiconductor device structure includes a silicon-on-insulator (SOI) substrate and a gate stack formed on the SOI substrate. The semiconductor device structure also includes gate spacers formed on sidewalls of the gate stack. The gate spacers... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20150137243 - Replacement metal gate finfet: A method for fabricating a field effect transistor device includes depositing a hardmask over a semiconductor layer depositing a metallic alloy layer over the hardmask, defining a semiconductor fin, depositing a dummy gate stack material layer conformally on exposed portions of the fin, patterning a dummy gate stack by removing... Agent:

20150137244 - Replacement metal gate finfet: A field effect transistor device includes a fin including a semiconductor material arranged on an insulator layer, the fin including a channel region, a hardmask layer arranged partially over the channel region of the fin, a gate stack arranged over the hardmask layer and over the channel region of the... Agent:

20150137245 - Replacement metal gate finfet: A field effect transistor device includes a fin including a semiconductor material arranged on an insulator layer, the fin including a channel region, a hardmask layer arranged partially over the channel region of the fin, a gate stack arranged over the hardmask layer and over the channel region of the... Agent:

20150137239 - Semiconductor device and method of manufacturing the same: To suppress performance degradation of a semiconductor device, when the width of a first active region having a first field effect transistor formed therein is smaller than the width of a second active region having a second field effect transistor formed therein, the height of a surface of a first... Agent:

20150137240 - Semiconductor device with a low-k spacer and method of forming the same: A device includes a semiconductor substrate. A gate stack on the semiconductor substrate includes a gate dielectric layer and a gate conductor layer. Low-k spacers are adjacent to the gate dielectric layer. Raised source/drain (RSD) regions are adjacent to the low-k spacers. The low-k spacers are embedded in an ILD... Agent:

20150137241 - Semiconductor element and display device using the same: A semiconductor having an active layer; a gate insulating film in contact with the semiconductor; a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the active layer; a photosensitive organic resin film formed on the first nitride insulating film;... Agent:

20150137236 - Silicon-on-insulator finfet with bulk source and drain: Embodiments of the invention provide a semiconductor structure including a finFET having an epitaxial semiconductor region in direct physical contact with a plurality of fins, wherein the epitaxial semiconductor region traverses an insulator layer and is in direct physical contact with the semiconductor substrate. The gate of the finFET is... Agent: Globalfounderies Inc.

20150137237 - Undoped epitaxial layer for junction isolation in a fin field effect transistor (finfet) device: Approaches for isolating source and drain regions in an integrated circuit (IC) device (e.g., a fin field effect transistor (FinFET)) are provided. Specifically, the FinFET device comprises a gate structure formed over a finned substrate; an isolation oxide beneath an active fin channel of the gate structure; an embedded source... Agent: Globalfoundries Inc.

20150137246 - Floating body contact circuit method for improving esd performance and switching speed: Embodiments of systems, methods, and apparatus for improving ESD performance and switching time for semiconductor devices including metal-oxide-semiconductor (MOS) field effect transistors (FETs), and particularly to MOSFETs fabricated on Semiconductor-On-Insulator (“SOT”) and Silicon-On-Sapphire (“SOS”) substrates.... Agent:

20150137247 - Semiconductor device and manufacturing method thereof: A semiconductor device includes a p-type metal oxide semiconductor device (PMOS) and an n-type metal oxide semiconductor device (NMOS) disposed over a substrate. The PMOS has a first gate structure located on the substrate, a carbon doped n-type well disposed under the first gate structure, a first channel region disposed... Agent: Taiwan Semiconductor Manufacturing Company Ltd.

20150137248 - Semiconductor device: A standard cell has gate patterns extending in Y direction and arranged at an equal pitch in X direction. End portions of the gate patterns are located at the same position in Y direction, and have an equal width in X direction. A diode cell is located next to the... Agent:

20150137254 - Graded dielectric structures: Graded dielectric layers and methods of fabricating such dielectric layers provide dielectrics in a variety of electronic structures for use in a wide range of electronic devices and systems. In an embodiment, a dielectric layer is graded with respect to a doping profile across the dielectric layer. In an embodiment,... Agent:

20150137249 - Inter-level connection for multi-layer structures: Systems and methods are provided for fabricating a semiconductor device structure. An example semiconductor device structure includes a first device layer, a second device layer and an inter-level connection structure. The first device layer includes a first conductive layer and a first dielectric layer formed on the first conductive layer,... Agent: Taiwan Semiconductor Manufacturing Company Limited

20150137252 - Layout design system, layout design method, and semiconductor device fabricated by using the same: A layout design system includes a processor; a storage unit configured to store a first unit design having a first area, wherein in the first unit design, a termination is not placed on a border thereof; and a design module configured to generate a second unit design having a second... Agent:

20150137251 - Semiconductor device and method of manufacturing the same: A semiconductor device includes a substrate and a device isolation pattern extending from a surface of the substrate into the substrate. The device isolation pattern has an electrically negative property and a physically tensile property. The device isolation pattern delimits an active region of the substrate. A transistor is provided... Agent:

20150137253 - Stress-inducing structures, methods, and materials: Stress-inducing structures, methods, and materials are disclosed. In one embodiment, an isolation region includes an insulating material in a lower portion of a trench formed in a workpiece and a stress-inducing material disposed in a top portion of the trench over the insulating material.... Agent:

20150137250 - String select line (ssl) of three-dimensional memory array and method of fabricating the same: The present invention further provides a string select line (SSL) of a three-dimensional memory array, including: a dielectric substrate; an SSL structure disposed on the dielectric substrate, wherein the SSL structure includes a plurality of dielectric layers and a plurality of first conductive layers, the dielectric layers and the first... Agent: Macronix International Co., Ltd.

20150137256 - Finfet cell architecture with power traces: A finFET block architecture suitable for use of a standard cell library, is based on an arrangement including a first set of semiconductor fins in a first region of the substrate having a first conductivity type, and a second set of semiconductor fins in a second region of the substrate,... Agent: Synopsys, Inc.

20150137255 - Semiconductor device: A semiconductor device is described, including a substrate including a first area and a second area, a first MOS element of a first conductivity type in the first area, and a second MOS element of the first conductivity type in the second area. The first area is closer to a... Agent: United Microelectronics Corp.

20150137257 - Semiconductor device with dual work function gate stacks and method for fabricating the same: A method for fabricating a semiconductor device includes forming a gate dielectric layer over a substrate; forming a metal containing layer, containing an effective work function adjust species, over the gate dielectric layer; forming an anti-reaction layer over the metal containing layer; increasing an amount of the effective work function... Agent:

20150137258 - Forming a low votage antifuse device and resulting device: Methods for a low voltage antifuse device and the resulting devices are disclosed. Embodiments may include forming a plurality of fins above a substrate, removing a portion of a fin, forming a fin tip, forming a first area of a gate oxide layer above at least the fin tip, forming... Agent: Globalfoundries Inc.

20150137259 - Semiconductor device: A semiconductor device includes a substrate including a conductive region, an insulating layer disposed on the substrate and including an opening exposing the conductive region, and a conductive layer buried within the opening and including a first region disposed on inner side walls of the opening and a second region... Agent:

20150137260 - Semiconductor device: A plurality of unit MISFET elements connected in parallel with each other to make up a power MISFET are formed in an LDMOSFET forming region on a main surface of a semiconductor substrate. A control circuit that controls a gate voltage of the power MISFET is formed in a driver... Agent: Renesas Electronics Corporation

20150137261 - Semiconductor device: A fabricating method of a semiconductor device includes providing a substrate having a first region and a second region, forming a plurality of first gates in the first region of the substrate, such that the first gates are spaced apart from each other at a first pitch, forming a plurality... Agent:

20150137265 - Fin field effect transistor and method of forming the same: A fin field effect transistor and method of forming the same. The fin field effect transistor includes a semiconductor substrate having a fin structure and between two trenches with top portions and bottom portions. The fin field effect transistor further includes shallow trench isolations formed in the bottom portions of... Agent:

20150137264 - Finfet body contact and method of making same: A semiconductor device may include body contacts on a finFET device for ESD protection. The semiconductor device comprises a semiconductor fin, a source/drain region and a body contact. The source/drain region and the body contact are in the semiconductor fin. A portion of the fin is laterally between the source/drain... Agent:

20150137266 - Replacement channels for semiconductor devices and methods for forming the same using dopant concentration boost: A replacement channel and a method for forming the same in a semiconductor device are provided. A channel area is defined in a substrate which is a surface of a semiconductor wafer or a structure such as a fin formed over the wafer. Portions of the channel region are removed... Agent:

20150137267 - Replacement gate structures and methods of manufacturing: Gate structures and methods of manufacturing is disclosed. The method includes forming a continuous replacement gate structure within a trench formed in dielectric material. The method further includes segmenting the continuous replacement gate structure into separate replacement gate structures. The method further includes forming insulator material between the separate replacement... Agent:

20150137262 - Semiconductor device and method of fabricating the same: A semiconductor device includes: active fins protruding from an active layer and extending in a first direction; a gate structure on the active fins extending in a second direction intersecting the first direction; and a spacer on at least one side of the gate structure, wherein each of the active... Agent:

20150137263 - Semiconductor device having fin-type field effect transistor and method of manufacturing the same: A field effect transistor includes a fin structure, having a sidewall, protruding from a substrate, and a device isolation structure on the substrate, the device isolation structure defining the sidewall of the fin structure, wherein the fin structure includes a buffer semiconductor pattern disposed on the substrate and a channel... Agent:

20150137268 - Non-planar sige channel pfet: Systems and methods are provided for fabricating a semiconductor device structure. An example semiconductor device structure includes a channel layer formed of a Germanium compound having a Germanium concentration B formed on a semiconductor substrate having a Germanium concentration of A, the Germanium concentration of the substrate A being less... Agent: Taiwan Semiconductor Manfacturing Company Limited

20150137269 - Replacement gate mosfet with a high performance gate electrode: In a replacement gate scheme, a continuous material layer is deposited on a bottom surface and a sidewall surface in a gate cavity. A vertical portion of the continuous material layer is removed to form a gate component of which a vertical portion does not extend to a top of... Agent:

20150137270 - Superior integrity of a high-k gate stack by forming a controlled undercut on the basis of a wet chemistry: A transistor device includes a gate electrode structure. The gate electrode structure includes a high-k gate insulation layer, a metal-containing first electrode material positioned above the high-k gate insulation layer, and a second electrode material positioned above the metal-containing first electrode material. The high-k gate insulation layer has a length... Agent: Globalfoundries Inc.

20150137272 - Dielectric nanocomposites and methods of making the same: Techniques related to nanocomposite dielectric materials are generally described herein. These techniques may be embodied in apparatuses, systems, methods and/or processes for making and using such material. An example process may include: providing a film having a plurality of nanoparticles and an organic medium; comminuting the film to form a... Agent:

20150137271 - Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devices: One method disclosed herein includes, among other things, performing a process operation on an exposed surface of a substrate so as to form an H-terminated silicon surface, selectively forming a sacrificial material layer within a replacement gate cavity but not on the H-terminated silicon surface, forming a high-k layer of... Agent: Global Foundries Inc.

20150137273 - Method and device for self-aligned contact on a non-recessed metal gate: A methodology for forming a self-aligned contact (SAC) that exhibits reduced likelihood of a contact-to-gate short circuit failure and the resulting device are disclosed. Embodiments may include forming a replacement metal gate, with spacers at opposite sides thereof, on a substrate, forming a recess in an upper surface of the... Agent: Globalfoundries Inc.

20150137274 - Semiconductor sensor chips: Semiconductor sensor chips are provided. In some embodiments, a semiconductor sensor chip can include at least one wire bond pad on one side thereof, at least one bond pad on another, opposite side thereof, and at least one through-silicon via (TSV) extending therebetween and electrically connected to the bond pads... Agent: General Electric Company

20150137275 - Titanium nitride electrode: The present invention relates to a method for decreasing the impedance of a titanium nitride element for use in an electrode component. The method comprises obtaining a titanium nitride element and hydrothermally treating the titanium nitride element by immersing the titanium nitride element in a liquid comprising water while heating... Agent: Imec Vzw

20150137282 - Flow sensor, method for manufacturing flow sensor and flow sensor module: A flow sensor structure seals the surface of an electric control circuit and part of a semiconductor device via a manufacturing method that prevents occurrence of flash or chip crack when clamping the semiconductor device via a mold. The flow sensor structure includes a semiconductor device having an air flow... Agent:

20150137276 - Mechanisms for forming micro-electro mechanical system device: Embodiments of mechanisms for forming a micro-electro mechanical system (MEMS) device are provided. The MEMS device includes a CMOS substrate, a cap substrate, and a MEMS substrate bonded between the CMOS substrate and the cap substrate. The MEMS substrate includes a first movable element and a second movable element. The... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20150137283 - Mems devices, packaged mems devices, and methods of manufacture thereof: MEMS devices, packaged MEMS devices, and methods of manufacture thereof are disclosed. In one embodiment, a microelectromechanical system (MEMS) device includes a first MEMS functional structure and a second MEMS functional structure. An interior region of the second MEMS functional structure has a pressure that is different than a pressure... Agent:

20150137279 - Multi-die sensor device: A semiconductor device includes a lead frame having a flag and leads that surround the flag. The leads include a dummy lead that has first and second wire bonding areas. A first die is attached on the flag and electrically connected to the first wire bonding area. The first die... Agent:

20150137281 - Physical quantity measurement sensor: A physical quantity measurement sensor includes: a ceramic package including a plate provided with a flow port through which a fluid to be measured flows; an electronic component including a sensing element housed in the package to detect the pressure of the fluid to be measured having flown through the... Agent:

20150137278 - Semiconductor package with gel filled cavity: A semiconductor device package is assembled using a jig that alters the shape of gel material disposed in a cavity in the package. In one embodiment, a jig having a concave bottom surface is inserted onto uncured gel material disposed within a cavity in a housing of the package to... Agent:

20150137277 - Semiconductor sensor chips: Semiconductor sensor chips are provided. In some embodiments, a semiconductor sensor chip can include at least one wire bond pad on one side thereof, at least one bond pad on another, opposite side thereof, and at least one through-silicon via (TSV) extending therebetween and electrically connected to the bond pads... Agent: General Electric Company

20150137280 - Structures and formation methods of micro-electro mechanical system device: A structure and a formation method of a micro-electro mechanical system (MEMS) device are provided. The MEMS device includes a cap substrate and a MEMS substrate bonded with the cap substrate. The MEMS substrate includes a first movable element and a second movable element. The MEMS device also includes a... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20150137285 - Capacitive micromachined ultrasonic transducer and method of fabricating the same: A capacitive micromachined ultrasonic transducer and a method of fabricating the same are provided. The capacitive micromachined ultrasonic transducer includes a device substrate including a first trench defining a plurality of first portions corresponding to an element and a second trench spaced apart from the first trench; a supporting unit... Agent: Samsung Electronics Co., Ltd.

20150137284 - Microphone package and mounting structure thereof: There are provided a microphone package and a mounting structure thereof, allowing for an increase in a back volume, the microphone package including: a package substrate; an acoustic element mounted on the package substrate and having a space formed in a lower portion thereof; and at least one electronic component... Agent: Samsung Electro-mechanics Co., Ltd.

20150137291 - Magnetic memory cells and methods of formation: Methods of forming magnetic memory cells are disclosed. Magnetic and non-magnetic materials are formed into a primal precursor structure in an initial stress state of essentially no strain, compressive strain, or tensile strain. A stress-compensating material, e.g., a non-sacrificial, conductive material, is formed to be disposed on the primal precursor... Agent:

20150137287 - Magnetic memory devices having perpendicular magnetic tunnel structures therein: Magnetic memory cells include a magnetic tunnel junction and a first electrode, which is electrically coupled to the magnetic tunnel junction by a first conductive structure. This conductive structure includes a blocking layer and a seed layer, which extends between the blocking layer and the magnetic tunnel junction. The blocking... Agent:

20150137290 - Magnetic random access memory: A magnetic random access memory which is a memory cell array including a magnetoresistive effect element having a fixed layer whose magnetization direction is fixed, a recording layer whose magnetization direction is reversible, and a non-magnetic layer provided between the fixed layer and the recording layer, wherein all conductive layers... Agent: Kabushiki Kaisha Toshiba

20150137292 - Magnetoresistance sensor with perpendicular anisotropy: A nanoscale tunnel magneto-resistance (TMR) sensor comprising an in-plane-magnetized reference layer and a free layer comprising interfacial perpendicular anisotropy, wherein the free layer comprises a sensing layer for sensing resistance as a function of applied magnetic field and is tunable to vary the direction of the sensing layer magnetization to... Agent: The Regents Of The University Of California

20150137288 - Memory element and memory device: Spin transfer torque memory elements and memory devices are provided. In one embodiment, the spin transfer torque memory element includes a first portion including CoFeB, a second portion including CoFeB, an intermediate portion interposed between the first and second portions, a third portion adjoining the second portion opposite the intermediate... Agent:

20150137286 - Method to form mram by dual ion implantation: A method to form small magnetic random access memory (MRAM) by dual ion implantation is provided. The first ion implantation add oxygen-gettering material surrounding the photo mask opened areas including sidewall followed by oxygen ion implantation to fully oxidize these oxygen-getter implanted areas into an electrically insulating layers to avoid... Agent: T3memory, Inc.

20150137289 - Multiple-bits-per-cell voltage-controlled magnetic memory: Voltage controlled magneto-electric tunnel junctions and memory devices are described which provide efficient high speed voltage switching of non-volatile magnetic devices (MeRAM) at high cell densities. A multi-bit-per-cell (MBPC) MeRAM is described which requires only a single transistor to write and read two data bits from the one MBPC MeRAM... Agent: The Regents Of The University Of California

20150137293 - Spin-transfer torque magnetic random access memory (sttmram) with perpendicular laminated free layer: A perpendicular spin-transfer torque magnetic random access memory (STTMRAM) element includes a fixed layer having a magnetization that is substantially fixed in one direction and a barrier layer formed on top of the fixed layer and a free layer. The free layer has a number of alternating laminates, each laminate... Agent:

20150137294 - Image sensor package structure and method: Image sensor package structure and method are provided. The method includes: providing first substrate having upper surface on which image sensing areas and pads are formed; providing second substrate having through holes; forming tape film on upper surface of second substrate to seal each through hole; contacting lower surface of... Agent: China Wafer Level Csp Co., Ltd.

20150137296 - Color filter array and micro-lens structure for imaging system: A color filter array and micro-lens structure for imaging system and method of forming the color filter array and micro-lens structure. A micro-lens material is used to fill the space between the color filters to re-direct incident radiation, and form a micro-lens structure above a top surface of the color... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20150137298 - Light detection device: A semiconductor light detection element has a plurality of channels, each of which consists of a photodiode array including a plurality of avalanche photodiodes operating in Geiger mode, quenching resistors connected in series to the respective avalanche photodiodes, and signal lines to which the quenching resistors are connected in parallel.... Agent: Hamamatsu Photonics K.k.

20150137297 - Methods of forming imaging device layers using carrier substrates: An array of color filter elements may be formed over an array of photodiodes in an integrated circuit for an imaging device using a carrier substrate. The carrier substrate may have a planar surface with a release layer. A layer of color filter material may be applied to the release... Agent: Aptina Imaging Corporation

20150137295 - Two color detector leveraging resonant cavity enhancement for performance improvement: Methods and structures for providing single-color or multi-color photo-detectors leveraging cavity resonance for performance benefits. In one example, a radiation detector (110) includes a semiconductor absorber layer (210, 410A, 410B, 610, 810, 1010, 1030, 1210, 1230) having a first electrical conductivity type and an energy bandgap responsive to radiation in... Agent: Raytheon Company

20150137299 - Solid state imaging device and manufacturing method for solid state imaging device: There is provided a solid state imaging device according to the embodiment. The solid state imaging device includes an imaging area and an element isolation unit having a light shielding effect. In the imaging area, a plurality of photoelectric conversion elements is two-dimensionally arranged in a matrix in a semiconductor... Agent: Kabushiki Kaisha Toshiba

20150137300 - Infrared sensor device and method for producing an infrared sensor device: An infrared sensor device includes a semiconductor substrate, at least one sensor element that is micromechanically formed in the semiconductor substrate, and at least one calibration element, which is micromechanically formed in the semiconductor substrate, for the sensor element. An absorber material is arranged on the semiconductor substrate in the... Agent:

20150137301 - Manufacturing method for solid-state imaging device and solid-state imaging device: A method for manufacturing a solid-state imaging device comprises a first step of preparing an imaging element including a second principal surface having an electrode arranged thereon, and a photoelectric converter part configured to photoelectrically convert the incident energy line so as to generate a signal charge; a second step... Agent:

20150137302 - High speed backside illuminated, front side contact photodiode array: The present specification discloses front-side contact back-side illuminated (FSC-BSL) photodiode array having improved characteristics such as high speed of each photodiode, uniformity of the bias voltage applied to different photodiode, low bias voltage, reduced resistance of each photodiode, and an associated reduction in noise. The photodiode array is made of... Agent:

20150137303 - Mechanisms for forming micro-electro mechanical device: Embodiments of mechanisms for forming a micro-electro mechanical system (MEMS) device are provided. The MEMS device includes a substrate and a MEMS sensor over the substrate. The MEMS sensor includes a floating heater disposed over the substrate. The MEMS sensor further includes a heat sink disposed over the substrate and... Agent: Taiwan Semiconductor Manufacturing Co., Ltd

20150137304 - Structure and fabrication method of a high performance mems thermopile ir detector: The invention involves structure and fabrication method of a high performance IR detector. The structure comprises a substrate; a releasing barrier band on the substrate; a thermal isolation chamber constructed by the releasing barrier band; a black silicon-based IR absorber located right above the thermal isolation chamber and the black... Agent:

20150137305 - Protective structure and method for producing a protective structure: Described herein is a protective structure. The protective structure includes a semiconductor substrate, a first diode disposed at least one of in or on the semiconductor substrate and a diode arrangement disposed at least one of in or on the semiconductor substrate. The diode arrangement includes a stack of a... Agent:

20150137306 - Semiconductor device and method for manufacturing the same: An N type diffusion layer in which a high-side circuit region is disposed is formed from a surface of a P type epitaxial layer covering a surface of a P type semiconductor substrate to reach the surface of the semiconductor substrate. An N type high breakdown voltage isolation region is... Agent: Mitsubishi Electric Corporation

20150137307 - Integrated circuit assembly with faraday cage: An integrated circuit assembly is formed with an insulating layer, a semiconductor layer, an active device, first, second, and third electrically conductive interconnect layers, and a plurality of electrically conductive vias. The insulating layer has a first surface and a second surface. The second surface is below the first surface.... Agent:

20150137309 - Methods of fabricating isolation regions of semiconductor devices and structures thereof: Methods of fabricating isolation regions of semiconductor devices and structures thereof are disclosed. In a preferred embodiment, a semiconductor device includes a workpiece and at least one trench formed in the workpiece. The at least one trench includes sidewalls, a bottom surface, a lower portion, and an upper portion. A... Agent: Infineon Technologies Ag

20150137308 - Self-aligned dual-height isolation for bulk finfet: A method of forming a semiconductor structure includes forming a first isolation region between fins of a first group of fins and between fins of a second group of fins. The first a second group of fins are formed in a bulk semiconductor substrate. A second isolation region is formed... Agent: Globalfoundries Inc.

20150137310 - Air bridge structure having dielectric coating: A substrate having an air bridge structure with end portions disposed and supported on the substrate and an elevated portion disposed between the end portions is coated with a protective layer. The protective layer is patterned to: leave portions of the protective layer over elevated portion and at least over... Agent: Raytheon Company

20150137312 - Metal fuse structure for improved programming capability: Structure providing more reliable fuse blow location, and method of making the same. A vertical metal fuse blow structure has, prior to fuse blow, an intentionally damaged portion of the fuse conductor. The damaged portion helps the fuse blow in a known location, thereby decreasing the resistance variability in post-blow... Agent: International Business Machines Corporation

20150137311 - Thin beam deposited fuse: A back-end-of-line thin ion beam deposited fuse (204) is deposited without etching to connect first and second last metal interconnect structures (110, 120) formed with last metal layers (LM) in a planar multi-layer interconnect stack to programmably connect separate first and second circuit connected to the first and second last... Agent:

20150137313 - Coil arrangement with metal filling: Devices, methods and production devices that relate to the forming of a coil on a semiconductor substrate are provided. Arranged within the coil is a metal filling, for example with a density of less than 20%.... Agent:

20150137314 - Semiconductor device and semiconductor module: The semiconductor device of the present invention includes an insulating layer, a high voltage coil and a low voltage coil which are disposed in the insulating layer at an interval in the vertical direction, a low potential portion which is provided in a low voltage region disposed around a high... Agent: Rohm Co., Ltd.

20150137315 - Dram mim capacitor using non-noble electrodes: A method for forming a capacitor stack includes forming a first bottom electrode layer including a conductive metal nitride material. A second bottom electrode layer is formed above the first bottom electrode layer. The second bottom electrode layer includes a conductive metal oxide material, wherein the crystal structure of the... Agent:

20150137316 - Semiconductor device including a resistor and method for the formation thereof: A semiconductor structure includes a substrate and a resistor provided over the substrate. The resistor includes a first material layer, a second material layer, a first contact structure and a second contact structure. The first material layer includes at least one of a metal and a metal compound. The second... Agent:

20150137319 - Iii nitride semiconductor substrate, epitaxial substrate, and semiconductor device: In a semiconductor device 100, it is possible to prevent C from piling up at a boundary face between an epitaxial layer 22 and a group III nitride semiconductor substrate 10 by the presence of 30×1010 pieces/cm2 to 2000×1010 pieces/cm2 of sulfide in terms of S and 2 at %... Agent:

20150137317 - Semiconductor wafer, method of producing a semiconductor wafer and method of producing a composite wafer: A semiconductor wafer is provided. The semiconductor wafer comprises a sacrificial layer and a semiconductor crystal layer above a semiconductor crystal layer forming wafer, the semiconductor crystal layer forming wafer, the sacrificial layer and the semiconductor crystal layer being arranged in the order of the semiconductor crystal layer forming wafer,... Agent: National Institute Of Advanced Industrial Science And Technology

20150137318 - Semiconductor wafer, method of producing a semiconductor wafer and method of producing a composite wafer: A semiconductor wafer is provided. The semiconductor wafer comprises a sacrificial layer, a first semiconductor crystal layer, and a second semiconductor crystal layer above a semiconductor crystal layer forming wafer, wherein the semiconductor crystal layer forming wafer, the sacrificial layer, the first semiconductor crystal layer and the second semiconductor crystal... Agent: National Institute Of Advanced Industrial Science And Technology

20150137321 - Apparatus and method for magnetic-field guided metal-assisted chemical etching: A magnetic field-guided method of metal-assisted chemical etching comprises immersing a structure that comprises a two-dimensional magnetic pattern layer on a surface thereof in an etchant solution. The magnetic pattern layer sinks into the structure as portions of the structure directly under the magnetic pattern layer are etched. A programmable... Agent:

20150137320 - Semiconductor device and method of fabricating the same: A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A... Agent:

20150137322 - Semiconductor device and method of forming wlcsp using wafer sections containing multiple die: A semiconductor wafer contains semiconductor die separated by saw streets. The semiconductor wafer is singulated through a portion of the saw streets to form wafer sections each having multiple semiconductor die per wafer section attached by uncut saw streets. Each wafer section has at least two semiconductor die. The wafer... Agent: Stats Chippac, Ltd.

20150137329 - Component having a via and method for manufacturing it: An advantageous method and system for realizing electrically very reliable and mechanically extremely stable vias for components whose functionality is realized in a layer construction on a conductive substrate. The via (Vertical Interconnect Access), which is led to the back side of the component and which is used for the... Agent:

20150137323 - Method for fabricating through silicon via structure: A method for fabricating through silicon via (TSV) structure is disclosed. The method includes the steps of: providing a substrate; forming a through-silicon via (TSV) in the substrate; depositing a liner in the TSV; removing the liner in a bottom of the TSV; and filling a first conductive layer in... Agent: United Microelectronics Corp.

20150137327 - Semiconductor device and fabrication method thereof: The invention provides a semiconductor device. A buried layer is formed in a substrate. A first deep trench contact structure is formed in the substrate. The first deep trench contact structure comprises a conductor and a liner layer formed on a sidewall of the conductor. A bottom surface of the... Agent: Vanguard International Semiconductor Corporation

20150137325 - Semiconductor device having metal patterns and piezoelectric patterns: Provided is a semiconductor device. The semiconductor device includes a passivation layer defining a metal pattern on a first surface of a substrate, an inter-layer insulating layer disposed on a second surface of the substrate, and a piezoelectric pattern formed between the metal pattern and the passivation layer on the... Agent:

20150137326 - Semiconductor devices having through-electrodes and methods for fabricating the same: A semiconductor device includes a semiconductor substrate having a top surface and a bottom surface facing each other, an interlayer dielectric layer provided on the top surface of the semiconductor substrate and including an integrated circuit, an inter-metal dielectric layer provided on the interlayer dielectric layer and including at least... Agent:

20150137324 - Startup circuit and method for ac-dc converters: A pattern generator includes and upper chip and one or more lower chips. The upper chip includes an upper substrate and a plurality of conductive plates on the upper substrate. The plurality of conductive plates is arranged as an array. The one or more lower chips include one or more... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20150137328 - Through silicon via bonding structure: System and method for bonding semiconductor substrates is presented. A preferred embodiment comprises forming a buffer layer over a surface of a semiconductor substrate while retaining TSVs that protrude from the buffer layer in order to prevent potential voids that might form. A protective layer is formed on another semiconductor... Agent:

20150137330 - Method for estimating the diffusion length of metallic species within a three-dimensional integrated structure, and corresponding three-dimensional integrated structure: A three-dimensional integrated structure may include two assembled integrated circuits respectively including two metallic lines, and at least two cavities passing through one of the integrated circuits and opening onto two locations respectively in electrical contact with the two metallic lines. The cavities may be sized to place a measuring... Agent:

20150137331 - Polymeric materials in self-assembled arrays and semiconductor structures and methods comprising such polymeric materials: Methods for fabricating sublithographic, nanoscale microstructures in line arrays utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. Semiconductor structures may include self-assembled block copolymer materials in the form of lines of half-cylinders of a minority block matrix of a majority block of the block... Agent:

20150137332 - Carrier for a semiconductor layer: A carrier for carrying a semiconductor layer having a growth surface and at least one nano-patterned structure on the growth surface is provided. The at least one nano-patterned structure on the growth surface of the carrier has a plurality of mesas, a recess is formed between two adjacent mesas, in... Agent:

20150137333 - Methods of selectively forming a material using a parylene coating and related semiconductor structures: Methods for depositing a material, such as a metal or a transition metal oxide, using an ALD (atomic layer deposition) process and resulting structures are disclosed. Such methods include treating a surface of a semiconductor structure periodically throughout the ALD process to regenerate a blocking material or to coat a... Agent:

20150137334 - Semiconductor device and method of forming a shielding layer over a semiconductor die disposed in a cavity of an interconnect structure and grounded through the die tsv: A semiconductor device has an interconnect structure with a cavity formed partially through the interconnect structure. A first semiconductor die is mounted in the cavity. A first TSV is formed through the first semiconductor die. An adhesive layer is deposited over the interconnect structure and first semiconductor die. A shielding... Agent: Stats Chippac, Ltd.

20150137335 - Managing parasitic capacitance and voltage handling of stacked radio frequency devices: Various implementations enable management of parasitic capacitance and voltage handling of stacked integrated electronic devices. Some implementations include a radio frequency switch arrangement having a ground plane, a stack and a first solder bump. The stack is arranged in relation to the ground plane, and includes switching elements coupled in... Agent:

20150137336 - Semiconductor device, method of manufacturing the same, in-millimeter-wave dielectric transmission device, method of manufacturing the same, and in-millimeter-wave dielectric transmission system: A millimeter-wave dielectric transmission device. The millimeter-wave dielectric transmission device includes a semiconductor chip provided on one interposer substrate and capable of millimeter-wave dielectric transmission, an antenna structure connected to the semiconductor chip, two semiconductor packages including a molded resin configured to cover the semiconductor chip and the antenna structure,... Agent:

20150137338 - Semiconductor assembly and method of manufacturing the same: A method of making a semiconductor assembly is characterized by the step of attaching a chip-on-interposer subassembly on a base carrier with the chip inserted into a through opening of the base carrier and the interposer laterally extending beyond the through opening. The base carrier provides a platform for the... Agent:

20150137337 - Semiconductor package and lead frame: A semiconductor package is disclosed, which includes: a die paddle portion; a plurality of conductive portions circumventing the die paddle portion; a power bus bar and a ground bus bar formed around the periphery of the die paddle portion; a semiconductor element attached to the die paddle portion and electrically... Agent: Siliconware Precision Industries Co., Ltd

20150137340 - Embedded package security tamper mesh: A secure integrated circuit package is provided. The secure integrated circuit package includes a first substrate having an upper surface and a lower surface. A first plurality of solder balls are arranged in a pattern on the lower surface of the first substrate. A die is coupled to the upper... Agent:

20150137339 - Semiconductor package and method of manufacturing the same: Disclosed herein are a semiconductor package and a method of manufacturing the same. The semiconductor package includes: a substrate including a mounting electrode formed on both sides and a wiring; a plurality of first electronic devices mounted on the substrate; a second electronic devices mounted on the substrate; and a... Agent: Samsung Electro-mechanics Co., Ltd.

20150137341 - Chip package and method for forming the same: A chip package including a first substrate having a first surface and a second surface opposite thereto is provided. The first substrate has a micro-electric element and a plurality of conducting pads adjacent to the first surface. The first substrate has a plurality of openings respectively exposing a portion of... Agent:

20150137342 - Inductor/transformer outside of silicon wafer: An integrated circuit package includes an integrated circuit and an interposer layer. The interposer layer is arranged above the integrated circuit and includes an inductor formed at least partially within the interposer layer. The inductor includes a first pair of conductive pillars including a first conductive pillar and a second... Agent:

20150137343 - Enhanced die-up ball grid array and method for making the same: Methods of assembling a ball grid array (BGA) package is provided. One method includes providing a tape substrate that has a first surface and a second surface, attaching a first surface of a stiffener to the first substrate surface, mounting an IC die to the second stiffener surface, mounting a... Agent: Broadcom Corporation

20150137344 - Semiconductor device and method for manufacturing same: A semiconductor device has a circuit board including an insulation layer, a wiring layer formed on one surface of the insulation layer, and a buffer layer formed on the other surface of the insulation layer, a semiconductor element bonded to the wiring layer, a radiator member bonded to the buffer... Agent: Kabushiki Kaisha Toyota Jidoshokki

20150137345 - Semiconductor package having heat spreader: A semiconductor package includes a heat spreader. The semiconductor package includes a substrate, a first semiconductor chip disposed on the substrate, and a second semiconductor chip disposed on the first semiconductor chip. The heat spreader may be formed on the first semiconductor chip. A thermal interfacial material (TIM) layer may... Agent:

20150137346 - Stacked semiconductor package and manufacturing method thereof: Disclosed herein is a stacked semiconductor package in which semiconductor chips having various sizes are stacked. In accordance with one aspect of the present disclosure, a stacked semiconductor package includes a first semiconductor chip structure provided with a first semiconductor chip, a first mold layer surrounding the first semiconductor chip,... Agent: Nepes Co., Ltd.

20150137347 - Adhesive composition and semiconductor device using same: An adhesive composition comprising silver particles containing silver atoms and zinc particles containing metallic zinc, wherein the silver atom content is 90 mass % or greater and the zinc atom content is from 0.01 mass % to 0.6 mass %, with respect to the total transition metal atoms in the... Agent:

20150137348 - Electronic device: In a conventional electronic device and a method of manufacturing the same, reduction in cost of the electronic device is hindered because resin used in an interconnect layer on the solder ball side is limited. The electronic device includes an interconnect layer (a first interconnect layer) and an interconnect layer... Agent:

20150137352 - Mechanisms for forming post-passivation interconnect structure: Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a contact pad over a substrate. The semiconductor device also includes a passivation layer over the substrate and a first portion of the contact pad, and a second portion of the contact pad is exposed through... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20150137359 - Method for forming through silicon via with wafer backside protection: Semiconductor devices with through silicon vias (TSVs) are formed without copper contamination. Embodiments include exposing a passivation layer surrounding a bottom portion of a TSV in a silicon substrate, forming a silicon composite layer over the exposed passivation layer and over a bottom surface of the silicon substrate, forming a... Agent:

20150137356 - Non-cyanide electrolytic gold plating solution: The present invention provides a non-cyanogen type electrolytic gold plating solution, which can form a plating film capable of maintaining a high hardness even when the plating film is subjected to a heat treatment. A non-cyanogen type electrolytic gold plating solution of the present invention includes: a gold source including... Agent: Electroplating Engineers Of Japan Limited

20150137354 - Pillar bump formed using spot-laser: A pillar bump, such as a copper pillar bump, is formed on an integrated circuit chip by applying a metallic powder over a conductive pad on a surface of the chip. The metallic powder is selectively spot-lasered to form the pillar bump. Any remaining unsolidified metallic powder may be removed... Agent:

20150137350 - Semiconductor device and fabricating method thereof: A semiconductor structure includes an oval-shaped pad and a dielectric layer. The oval-shaped pad is on a substrate and includes a major axis corresponding to the largest distance of the oval-shaped pad. The major axis is toward a geometric center of the substrate. The dielectric layer covers the substrate and... Agent: Taiwan Semiconductor Manufacturing Company Ltd.

20150137349 - Semiconductor device and manufacturing method thereof: A semiconductor device includes a substrate including a surface, a plurality of pads disposing on the surface of the substrate, the plurality of pads includes a non-solder mask defined (NSMD) pad and a solder mask defined (SMD) pad, and the NSMD pad is arranged at a predetermined location. Further, a... Agent: Taiwan Semiconductor Manufacturing Company Ltd.

20150137351 - Semiconductor device and manufacturing method thereof: A semiconductor device includes a die, a conductive post disposed adjacent to the die, and a molding surrounding the conductive post and the die, the molding includes a protruded portion protruded from a sidewall of the conductive post and disposed on a top surface of the conductive post. Further, a... Agent: Taiwan Semiconductor Manufacturing Company Ltd.

20150137355 - Semiconductor device and manufacturing method thereof: A semiconductor device includes a first substrate including a surface, and a pad array on the surface of the substrate, wherein the pad array comprises a first type pad and a second type pad located on a same level. The semiconductor device further includes a conductive bump connecting either the... Agent: Taiwan Semiconductor Manufacturing Company Ltd.

20150137357 - Semiconductor device and semiconductor device production method: An inventive semiconductor device includes: a first semiconductor chip; a second semiconductor chip having a front surface opposed to a front surface of the first semiconductor chip; a first electrode region including a first electrode provided between the first semiconductor chip and the second semiconductor chip to electrically connect the... Agent: Rohm Co., Ltd.

20150137358 - Semiconductor device and semiconductor device production method: A semiconductor device according to the present invention includes: a combination object; and a chip having a front surface opposed to a front surface of the combination object. The chip includes: a multi-level wiring structure provided in the front surface of the chip; a connection electrode provided in the multi-level... Agent: Rohm Co., Ltd.

20150137361 - Through silicon via structure and method: A system and method for manufacturing a through silicon via is disclosed. An embodiment comprises forming a through silicon via with a liner protruding from a substrate. A passivation layer is formed over the substrate and the through silicon via, and the passivation layer and liner are recessed from the... Agent:

20150137360 - Tsv structures and methods for forming the same: A device includes a substrate having a front side and a backside, a through-via extending from the backside to the front side of the substrate, and a conductive pad on the backside of the substrate and over the through-via. The conductive pad has a substantially planar top surface. A conductive... Agent:

20150137353 - Under-bump metal structures for interconnecting semiconductor dies or packages and associated systems and methods: The present technology is directed to manufacturing semiconductor dies with under-bump metal (UBM) structures for die-to-die and/or package-to-package interconnects or other types of interconnects. In one embodiment, a method for forming under-bump metal (UBM) structures on a semiconductor die comprises constructing a UBM pillar by plating a first material onto... Agent: Micron Technology, Inc.

20150137364 - Microelectronic devices, stacked microelectronic devices, and methods for manufacturing microelectronic devices: Microelectronic devices, stacked microelectronic devices, and methods for manufacturing microelectronic devices are described herein. In one embodiment, a set of stacked microelectronic devices includes (a) a first microelectronic die having a first side and a second side opposite the first side, (b) a first substrate attached to the first side... Agent:

20150137366 - Reactive bonding of a flip chip package: An array of bonding pads including a set of reactive materials is provided on a first substrate. The set of reactive materials is selected to be capable of ignition by magnetic heating induced by time-dependent magnetic field. The magnetic heating can be eddy current heating, hysteresis heating, and/or heating by... Agent:

20150137362 - Reworkable epoxy resin and curative blend for low thermal expansion applications: A curable composition including: an epoxy resin; and an amine curing component including: an aromatic amine curing agent; and a solubilizer including an aliphatic amine, a cycloaliphatic amine, a non-volatile primary alcohol, non-volatile solvent or a mixture thereof. An electronic assembly including: a substrate; an underfill including a cured product... Agent:

20150137363 - Semiconductor device and semiconductor package: A semiconductor device includes a substrate, a sealing portion, a controller, a semiconductor chip, and a plurality of differential signal balls. The substrate has a first surface and a second surface positioned on a side opposite to the first surface. The sealing portion is formed on the first surface of... Agent: Kabushiki Kaisha Toshiba

20150137365 - Semiconductor device assembly with through-package interconnect and associated systems, devices and methods: Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a spacer material on an encapsulant such that the encapsulant separates the spacer material from an active surface of a semiconductor device and at least one interconnect projecting away from the... Agent: Micron Technology, Inc.

20150137368 - Landing structure for through-silicon via: Embodiments of the present disclosure describe techniques and configurations associated with forming a landing structure for a through-silicon via (TSV) using interconnect structures of interconnect layers. In one embodiment, an apparatus includes a semiconductor substrate having a first surface and a second surface opposite to the first surface, a device... Agent:

20150137367 - Method for forming transparent electrode and semiconductor device manufactured using same: Provided are a method for forming a transparent electrode and a semiconductor device where the transparent electrode is formed by using the method. The method for forming a transparent electrode includes: forming a transparent electrode by using a transparent material of which resistance state is to be changed from a... Agent:

20150137369 - Method of optical proximity correction for modifying line patterns and integrated circuits with line patterns modified by the same: A method of optical proximity correction executed by a computer system for modifying line patterns includes the following steps. First, providing an integrated circuit layout with parallel line patterns and interconnect patterns disposed corresponding to the parallel line patterns. Then, using the computer to modify the integrated circuit layout based... Agent:

20150137370 - Electrically conductive device and manufacturing method thereof: An electrically conductive device and a manufacturing method thereof are provided. According to an exemplary embodiment, an electrically conductive device includes a graphene layer on a substrate, a protein tube portion on the graphene layer, and a conductor penetrating through the protein tube potion to the graphene layer, wherein the... Agent:

20150137371 - Nanoscale interconnects fabricated by electrical field directed assembly of nanoelements: The invention provides a fast, scalable, room temperature process for fabricating metallic nanorods from nanoparticles or fabricating metallic or semiconducting nanorods from carbon nanotubes suspended in an aqueous solution. The assembled nanorods are suitable for use as nanoscale interconnects in CMOS-based devices and sensors. Metallic nanoparticles or carbon nanotubes are... Agent:

20150137374 - Copper wire and dielectric with air gaps: Approaches for fabricating copper wires in integrated circuits are provided. A method of manufacturing a semiconductor structure includes forming a wire opening in a mask. The method also includes electroplating a conductive material in the wire opening. The method additionally includes forming a cap layer on the conductive material. The... Agent: International Business Machines Corporation

20150137375 - Copper wire and dielectric with air gaps: Approaches for fabricating copper wires in integrated circuits are provided. A method of manufacturing a semiconductor structure includes forming a wire opening in a mask. The method also includes electroplating a conductive material in the wire opening. The method additionally includes forming a cap layer on the conductive material. The... Agent:

20150137373 - Integrated circuits and methods for fabricating integrated circuits with improved contact structures: Integrated circuits with improved contact structures and methods for fabricating integrated circuits with improved contact structures are provided. In an exemplary embodiment, a method for fabricating integrated circuits includes providing a device in and/or on a semiconductor substrate. Further, the method includes forming a contact structure in electrical contact with... Agent: Globalfoundries, Inc.

20150137372 - Self forming barrier layer and method of forming: Methods for forming a self-forming barrier layer and the resulting devices are disclosed. Embodiments may include forming a metal line above a substrate, forming a reagent layer above the metal line and the substrate, forming a dielectric layer on the reagent layer, and transforming the reagent layer into a self-forming... Agent: Globalfoundries Inc.

20150137376 - Semiconductor structure and semiconductor fabricating process for the same: A semiconductor structure and a fabricating process for the same are provided. The semiconductor fabricating process includes providing a first dielectric layer, a transitional layer formed on the first dielectric layer, and a conductive fill penetrated through the transitional layer and into the first dielectric layer; removing the transitional layer;... Agent:

20150137377 - Graphene and metal interconnects with reduced contact resistance: A structure including a first metal line in a first interconnect level, the first metal line comprising one or more graphene portions, a second metal line in a second interconnect level above the first interconnect level, the second metal line comprising one or more graphene portions, and a metal via... Agent:

20150137380 - Electronic device incorporating a randomized interconnection layer: An electronic device incorporating a randomized interconnection layer. In one example, the device includes a randomized interconnection layer having a randomized conductive pattern formed by etching of a heterogeneous layer; and a sensing circuit, electrically coupled to the randomized interconnection layer to detect the randomized conductive pattern. In another example,... Agent: Nxp B.v.

20150137379 - Fan out package structure and methods of forming: An embodiment is a structure comprising a die having a pad on a surface and an encapsulant at least laterally encapsulating the die. The pad is exposed through the encapsulant. The structure further includes a first dielectric layer over the encapsulant and the die, a first conductive pattern over the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20150137381 - Optically-masked microelectronic packages and methods for the fabrication thereof: Microelectronic packages and methods for fabricating microelectronic packages having optical mask layers are provided. In one embodiment, the method includes building redistribution layers over the frontside of a semiconductor die. The redistribution layers includes a body of dielectric material in which a plurality of interconnect lines are formed. An optical... Agent:

20150137378 - Semiconductor device having voids and method of forming same: A method embodiment includes forming a hard mask over a dielectric layer and forming a first metal line and a second metal line extending through the hard mask into the dielectric layer. The method further includes removing the hard mask, wherein removing the hard mask defines an opening between the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20150137387 - Integrated circuit device including through-silicon via structure and method of manufacturing the same: An integrated circuit (IC) device includes a semiconductor substrate having a via hole extending through at least a part thereof, a conductive structure in the via hole, a conductive barrier layer adjacent the conductive structure; and a via insulating layer interposed between the semiconductor substrate and the conductive barrier layer.... Agent:

20150137385 - Integrated circuits with close electrical contacts and methods for fabricating the same: Integrated circuits with close electrical contacts and methods for fabricating such integrated circuits are provided. The method includes forming a first and a second contact in an interlayer dielectric, and forming a recess between the first and second contact. A etch mask is formed overlying the interlayer dielectric, and the... Agent: Globalfoundries, Inc.

20150137382 - Self-alignment for redistribution layer: An apparatus comprising a substrate with multiple electronic devices. An interconnect structure formed on a first side of the substrate interconnects the electronic devices. Dummy TSVs each extend through the substrate and form an alignment mark on a second side of the substrate. Functional TSVs each extend through the substrate... Agent:

20150137386 - Semiconductor device: There is provided a semiconductor device which includes a plurality of first through-substrate vias that are used to supply power from a first power supply and that penetrate through a substrate structure, and a plurality of second through-substrate vias that are used to supply power from a second power supply... Agent: Ps4 Luxco S.a.r.l.

20150137388 - Semiconductor devices: A semiconductor device includes a first low-k dielectric layer structure including at least one first low-k dielectric layer sequentially stacked on a substrate, a via structure extending through at least a portion of the substrate and the first low-k dielectric layer structure, and a first blocking layer pattern structure spaced... Agent:

20150137384 - Semicondutor device with through-silicon via-less deep wells: Methods and systems for a semiconductor device with through-silicon via-less deep wells are disclosed and may include forming a mask pattern on a silicon carrier, etching wells in the silicon carrier, and forming metal contacts in the etched wells, wherein the metal contacts comprise a plurality of deposited metal layers.... Agent: Amkor Technology, Inc.

20150137383 - Thin substrate and mold compound handling using an electrostatic-chucking carrier: Thin substrates and mold compound handling is described using an electrostatic-chucking carrier. In one example, a first part of a plurality of silicon chip packages is formed on a front side of a silicon substrate wafer at a first processing station. An a carrier wafer of an electrostatic chuck is... Agent:

20150137389 - Semiconductor package: An embodiment includes a semiconductor package comprising: a substrate; a semiconductor chip package unit disposed on the substrate, the semiconductor chip package unit comprising: a first semiconductor chip; a first encapsulating material layer encapsulating the first semiconductor chip; a plurality of connection pads formed on an upper surface of the... Agent:

20150137390 - Aluminum coated copper ribbon: A ribbon, preferably a bonding ribbon for bonding in microelectronics, contains a first layer containing copper, a coating layer containing aluminum superimposed over the first layer, and an intermediate layer. In a cross-sectional view of the ribbon, the area share of the first layer is from 50 to 96% and... Agent:

20150137391 - Electronic component having a corrosion-protected bonding connection and method for producing the component: The invention relates to an electronic component (1) having a corrosion-protected bonding connection and a method for producing said component. For this purpose the electronic component (1) has at least one semiconductor chip (3) on a substrate (4). Moreover, a bonding connection at risk of corrosion is provided on the... Agent: Robert Bosch Gmbh

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