Active solid-state devices (e.g., transistors, solid-state diodes) patents - Monitor Patents
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Active solid-state devices (e.g., transistors, solid-state diodes)

Below are recently published patent applications awaiting approval from the USPTO. Recent week's RSS XML file available below.
Listing for abstract view: USPTO application #, Title, Abstract excerpt,Patent Agent. Listing format for list view: USPTO National Class full category number, title of the patent application.
  
02/05/2015 > 280 patent applications in 111 patent subcategories.

20150034898 - Confined defect profiling within resistive random memory access cells: Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A stack including a defect source layer, a defect blocking layer, and a defect acceptor layer disposed between the defect source layer and the defect blocking layer may be subjected to annealing. During the annealing, defects are... Agent:

20150034897 - Post deposition adjustment of chalcogenide composition in chalcogenide containing semiconductors: The concentration of a constituent within a chalcogenide film used to form a chalcogenide containing semiconductor may be adjusted post deposition by reacting the chalcogenide film with a material in contact with the chalcogenide film. For example, a chalcogenide film containing tellurium may be coated with a titanium layer. Upon... Agent:

20150034896 - Resistive-switching nonvolatile memory elements: Nonvolatile memory elements including resistive switching metal oxides may be formed in one or more layers on an integrated circuit. Each memory element may have a first conductive layer, a metal oxide layer, and a second conductive layer. Electrical devices such as diodes may be coupled in series with the... Agent:

20150034899 - Semiconductor device and fabricating the same: The present disclosure provides a method for fabricating an integrated circuit (IC) device. The method includes providing a precursor including a substrate having first and second metal-oxide-semiconductor (MOS) regions. The first and second MOS regions include first and second gate regions, semiconductor layer stacks, source/drain regions and isolation regions. The... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20150034900 - Light-emitting diode and method of manufacturing the same: A light-emitting diode and manufacturing method, including a flat portion and a mesa structure. An inclined side surface is formed by wet etching such that a cross-sectional area of the mesa structure is continuously reduced toward a top surface. A protective film covers the flat portion, the inclined side surface,... Agent: Showa Denko K.k.

20150034902 - Materials, structures, and methods for optical and electrical iii-nitride semiconductor devices: The present invention provides materials, structures, and methods for III-nitride-based devices, including epitaxial and non-epitaxial structures useful for III-nitride devices including light emitting devices, laser diodes, transistors, detectors, sensors, and the like. In some embodiments, the present invention provides metallo-semiconductor and/or metallo-dielectric devices, structures, materials and methods of forming metallo-semiconductor... Agent:

20150034901 - Semiconductor light emitting element: A semiconductor light emitting element includes an electrode 8, an active layer 3, a photonic crystal layer 4, and an electrode 9. Conductivity types between the active layer 3 and the electrode 8 and between the active layer 3 and the electrode 9 differ from each other. The electrode 8,... Agent: Hamamatsu Photonics K.k.

20150034903 - Semiconductor device and method of manufacturing semiconductor device: A semiconductor device includes a first layer made of a group III nitride semiconductor of a first conductivity type, a second layer made of a group III nitride semiconductor of a second conductivity type on a first surface of the first layer, a third layer made of a group III... Agent: Kabushiki Kaisha Toshiba

20150034904 - Semiconductor device and method of manufacturing semiconductor device: In a semiconductor device, a first-layer includes a group-III nitride semiconductor of a first conduction type. A second-layer includes a group-III nitride semiconductor of a second conduction type on a first surface of the first layer. A third-layer includes an Al-containing group-III nitride semiconductor on a first region of a... Agent: Kabushiki Kaisha Toshiba

20150034905 - Semiconductor device and fabrication method thereof: A method of fabricating a semiconductor device is provided. The method includes forming a substrate structure, wherein the substrate structure includes a substrate and a fin-shaped barrier layer formed on a surface of the substrate; forming a quantum well (QW) material layer on a surface of the fin-shaped barrier layer;... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20150034906 - Semiconductor device and fabrication method thereof: A semiconductor device and a method for fabricating the same are disclosed. In the method, a substrate structure is provided, including a substrate and a fin-shaped buffer layer formed on the surface of the substrate. A QW material layer is formed on the surface of the fin-shaped buffer layer. A... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20150034907 - Gate-tunable p-n heterojunction diode, and fabrication method and application of same: One aspect of the invention relates to a gate-tunable p-n heterojunction diode including a vertical stacked heterojunction of two ultrathin semiconductors. In one embodiment, single-layer molybdenum disulphide of an n-type semiconductor are stacked below semiconducting single-walled carbon nanotubes of a p-type semiconductor with each of them connected to a gold... Agent:

20150034908 - Semiconductor graphene structures, methods of forming such structures and semiconductor devices including such structures: A semiconducting graphene structure may include a graphene material and a graphene-lattice matching material over at least a portion of the graphene material, wherein the graphene-lattice matching material has a lattice constant within about ±5% of a multiple of the lattice constant or bond length of the graphene material. The... Agent:

20150034909 - Asymmetric dense floating gate nonvolatile memory with decoupled capacitor: A nonvolatile memory (“NVM”) bitcell includes a capacitor, an asymmetrically doped transistor, and a tunneling device. The capacitor, transistor, and tunneling device are each electrically coupled to different active regions and metal contacts. The three devices are coupled by a floating gate that traverses the three active regions. The tunneling... Agent: Synopsys, Inc.

20150034940 - Adhesive film and product for encapsulating organic electronic device using same: Provided are an adhesive film and an organic electronic device (OED) encapsulation product using the same. As moisture resistance is maintained by preventing traveling of moisture in a matrix resin, moisture or oxygen input to the organic electronic device from an external environment may be effectively prevented, and temporal stability,... Agent:

20150034938 - Compound for organic optoelectronic device, organic light emitting diode including the same and display including the organic light emitting diode: A compound for an organic optoelectronic device, an organic light emitting diode including the same, and a display device including the organic light emitting diode are disclosed and the compound for an organic optoelectronic device represented by the following Chemical Formula 1 or 2 provides an organic light emitting diode... Agent:

20150034920 - Display apparatus and manufacturing method thereof: A display apparatus may include a substrate. The display apparatus may further include a display unit that includes an emission layer and is disposed on the substrate. The display apparatus may further include a protective layer that overlaps the display unit. The display apparatus may further include an organic layer... Agent: Samsung Display Co., Ltd.

20150034939 - Display device and method for manufacturing the same: A structure of an EL display device which has an increased display area is provided. Further, a structure of an EL display device which has a high definition display is provided. An auxiliary electrode is formed over a first partition and side surfaces of the auxiliary electrode are covered with... Agent: Semiconductor Energy Laboratory Co., Ltd.

20150034935 - Flexible display device and manufacturing method thereof: A flexible display device includes: a display substrate which is divided into a first region corresponding to a within-cell region of an integrated devices sheet from which the flexible display device is cut and into a second region corresponding to an outside-the-cell region of the integrated devices sheet, where within... Agent:

20150034932 - Flexible organic electroluminescent device and method of fabricating the same: A flexible organic electroluminescent device is disclosed which includes: a flexible substrate; a buffer layer entirely formed on the flexible substrate; a thin film transistor formed on the buffer layer and configured to include an active layer; a planarization film formed to cover the thin film transistor; an organic light... Agent: Lg Display Co., Ltd.

20150034917 - Heterocyclic compound and organic light-emitting device including the same: f

20150034911 - Infrared oled display device and the manufacturing method thereof: The present invention provides an infrared OLED display device and the manufacturing method thereof. Wherein, the infrared OLED display device comprises multiple infrared OLED units, which are used to display infrared image; a solar cell, which is used to absorb sunlight and then convert it to electrical energy; a transformer,... Agent:

20150034922 - Light emitting device and electronic appliance: The present invention is to provide a light emitting device capable of obtaining a certain luminance without influence by the temperature change, and a driving method thereof. A current mirror circuit formed by using a transistor is provided for each pixel. The first transistor and the second transistor of the... Agent:

20150034936 - Light-emitting device and method of manufacturing the same: To provide a bright and highly reliable light-emitting device. An anode (102), an EL layer (103), a cathode (104), and an auxiliary electrode (105) are formed sequentially in lamination on a reflecting electrode (101). Further, the anode (102), the cathode (104), and the auxiliary electrode (105) are either transparent or... Agent:

20150034937 - Light-emitting element and display device: There has been a problem that difference in refractive index between an opposite substrate or a moisture barrier layer provided thereover, and air is maintained large, and light extraction efficiency is low. Further, there has been a problem that peeling or cracking due to the moisture barrier layer is easily... Agent:

20150034934 - Local seal for encapsulation of electro-optical element on a flexible substrate: An electroluminescent display or lighting product incorporates a panel comprising a collection of distinct light-emitting elements formed on a substrate. A plurality of distinct local seals are formed over respective individual light-emitting elements or groups of light-emitting elements. Each local seal is formed by depositing a low melting temperature glass... Agent:

20150034927 - Material for organic electroluminescent element, and organic electroluminescent element using same: A compound represented by the following formula (1-1):... Agent: Idemitsu Kosan Co., Ltd.

20150034924 - Novel triphenylene derivatives and organic electroluminescent devices using said derivatives: The compounds have a structure in which an aromatic tertiary amine is introduced into a triphenylene ring. Owing to this structure, the compounds exhibit (A) favorable hole injection property, (B) large hole mobility, (C) excellent electron blocking power, (D) stability in their thin-film form, and (E) excellent heat resistance. The... Agent: Hodogaya Chemical Co., Ltd.

20150034928 - Optical-device surface-sealing composition, optical-device surface-sealing sheet, display, and display manufacturing method: The purpose of the present invention is to provide the following: an optical-device surface-sealing composition that makes it possible to fabricate an optical-device-using display with a low amount of warpage even if there is a large difference between the coefficients of linear expansion of substrates used in said display; a... Agent:

20150034914 - Organic compound and organic optoelectric device and display device: An organic compound represented by a combination of a moiety represented by the following Chemical Formula 1, a moiety represented by the following Chemical Formula 2, and a moiety represented by the following Chemical Formula 3,... Agent:

20150034931 - Organic el module and power supply structure made up of organic el modules: The present invention aims at providing a further downsizable organic EL module. Void parts are formed on first and second power supply members. The power supply members are different in shape, so that at least a part of the first power supply member is located in a vertically projected region... Agent:

20150034926 - Organic electroluminescence element: The organic electroluminescence element includes a functional layer which is interposed between the first electrode and the second electrode and includes a light-emitting layer. The second electrode includes at least an electrically conductive polymer layer which is in contact with the functional layer and has a light transmissive property. The... Agent: Panasonic Corporation

20150034929 - Organic electroluminescence element: The organic electroluminescence element in accordance with the present invention includes: a substrate; a light-outcoupling layer situated on a surface of the substrate; a light-emitting layer situated on a face on an opposite side of the light-outcoupling layer from the substrate; a sealing base situated facing the face of the... Agent:

20150034933 - Organic light emitting diode display having thin film transistor substrate using oxide semiconductor and method for manufacturing the same: Provided is a thin film transistor having an oxide semiconductor material for an organic light emitting diode display and a method for manufacturing the same. The organic light emitting diode display comprises: a gate electrode formed on a substrate; a gate insulating layer formed on the gate electrode; a semiconductor... Agent:

20150034925 - Organic light emitting diode, manufacturing method for organic light emitting diode, image display device, and illumination device: o

20150034915 - Organic light-emitting device:

20150034919 - Organic light-emitting device:

20150034930 - Organic light-emitting device: An organic light-emitting component is specified, comprising a translucent substrate (1), on which a translucent electrode (3) is arranged, comprising on the translucent electrode (3) an organic functional layer stack comprising organic functional layers having at least one organic light-emitting layer (5) and comprising a further electrode (7), wherein the... Agent: Osram Opto Semiconductors Gmbh

20150034913 - Organic light-emitting diode (oled) display: An organic light emitting-diode (OLED) display is disclosed. In one aspect, the OLED includes a first substrate, a first electrode provided on the first substrate, a pixel defining layer provided on the first electrode and including a first opening exposing at least a portion of the first electrode, and an... Agent: Samsung Display Co., Ltd.

20150034916 - Organic light-emitting display apparatus and method of manufacturing the same: An organic light-emitting display apparatus includes a substrate, a display unit, an encapsulation layer, and a protection layer. The display unit is formed on the substrate. The encapsulation layer covers the display unit. The protection layer is formed on the encapsulation layer. The encapsulation layer is formed of a low... Agent: Samsung Display Co., Ltd.

20150034918 - Organic light-emitting display apparatus and method of manufacturing the same: An organic light-emitting display apparatus includes a first substrate including a display unit having a light-emitting region and a non-light-emitting region, a second substrate parallel to the first substrate, and a reflective member on a surface of the second substrate that faces the first substrate, the reflective member corresponding to... Agent:

20150034921 - Organic light-emitting display apparatus including a shield layer and method of manufacturing the same: An organic light-emitting display apparatus including a shield layer and a method of manufacturing the same are provided. The organic light-emitting display apparatus includes a substrate having a display area and a peripheral area surrounding the display area. A plurality of first thin film transistors (TFTs) are disposed in the... Agent:

20150034910 - Organic x-ray detector: An x-ray imaging system includes an organic x-ray detector having a layered structure composed of a scintillator layer disposed on a first electrode layer and an absorber layer sandwiched between the first electrode layer and a second electrode layer. The second electrode layer is disposed on a TFT array and... Agent: General Electric Company

20150034912 - Thin film transistor substrate, display device having the same and method of manufacturing the same: A thin film transistor substrate includes a semiconductor pattern on a base substrate, a first insulation member disposed on the semiconductor pattern, a second insulation pattern disposed on the first insulation member, and a gate electrode disposed on the first insulation member and the second insulation pattern. The second insulation... Agent:

20150034923 - White organic light emitting diode device: Provided is a white organic light emitting diode device, including first and second electrodes facing each other above a substrate, first and second charge generation layers formed between the first electrode and the second electrode, a first stack disposed between the first electrode and the first charge generation layer and... Agent:

20150034951 - Display device and manufacturing method thereof: Disclosed is a display device including a transistor showing extremely low off current. In order to reduce the off current, a semiconductor material whose band gap is greater than that of a silicon semiconductor is used for forming a transistor, and the concentration of an impurity which serves as a... Agent:

20150034946 - Display panel: The present invention provides a display panel including a novel structure that is suitable for preventing a short circuit between terminals. The present invention relates to a display panel including: an active matrix substrate; a counter substrate; and a sealing material, the active matrix substrate including a plurality of terminals... Agent:

20150034941 - Integrated circuits having finfet semiconductor devices and methods of fabricating the same to resist sub-fin current leakage: Integrated circuits that have a FinFET and methods of fabricating the integrated circuits are provided herein. In an embodiment, a method of fabricating an integrated circuit having a FinFET includes providing a substrate comprising fins. The fins include semiconductor material. A first metal oxide layer is formed over sidewall surfaces... Agent: Globalfoundries, Inc.

20150034947 - Oxide semiconductor film and semiconductor device: A crystalline oxide semiconductor film which can be used as a semiconductor film of a transistor or the like is provided. In particular, a crystalline oxide semiconductor film with less defects such as grain boundaries is provided. One embodiment of the present invention is a crystalline oxide semiconductor film which... Agent: Semiconductor Energy Laboratory Co., Ltd.

20150034945 - Semiconductor device: A semiconductor device with a transistor in which current flowing between a source and a drain when the voltage of a gate electrode is 0 V can be reduced is provided. The semiconductor device incorporates a multi-gate transistor having an oxide semiconductor film formed over an insulating surface, a first... Agent:

20150034948 - Semiconductor device: Electric charge is stored, in accordance with a bias voltage, in a gate of a transistor performing switching operation between an input terminal and an output terminal, and the gate is brought into an electrically floating state at the time of completing the storage of electric charge in the gate.... Agent:

20150034949 - Semiconductor device and method for manufacturing semiconductor device: Provided is a semiconductor device having a structure which can prevent deterioration of the electrical characteristics, which becomes more significant with miniaturization. The semiconductor device includes a first oxide semiconductor film over an insulating surface; a second oxide semiconductor film over the first oxide semiconductor film; a third oxide semiconductor... Agent:

20150034942 - Thin film transistor and method of manufacturing the same: According to example embodiments, a thin film transistor (TFT) includes a channel layer including zinc, nitrogen, and oxygen; an etch stop layer on the channel layer; source and drain electrodes respectively contacting both ends of the channel layer; a gate electrode corresponding to the channel layer; and a gate insulating... Agent: Samsung Electronics Co., Ltd.

20150034943 - Thin film transistor array substrate: The present invention discloses a thin film transistor array substrate comprising a plurality of thin film transistors, with each one thereof including a gate electrode, a gate insulation layer, an amorphous-oxide semiconductor layer and a pair of a source electrode and a drain electrode. The amorphous-oxide semiconductor layer comprises an... Agent: Hannstar Display Corp.

20150034950 - Thin film transistor circuit and display device using it: If the threshold of a thin film transistor is depleted, a leak-induced voltage drop takes place and the desired voltage cannot be obtained. Depending on the severity of the phenomenon, the thin film transistor may fail to function. This disclosure offers a thin film transistor circuit having a first transistor... Agent:

20150034944 - X-ray detecting panel and manufacturing method thereof: A panel to detect X-rays includes a plurality of signal lines, a plurality of gate lines, and a plurality of cells in areas adjacent intersections of respective ones of the gate and control lines. A first area includes a first cell having a driving circuit, and a second area includes... Agent: Samsung Display Co., Ltd.

20150034952 - Semiconductor device: A semiconductor device includes a plurality of cells in a main region, a plurality of cells in a sensing region, a transistor, and a gate shut-off time for the sensing region. The transistor is configured to drive each of the plurality of cells in the main region and each of... Agent: Honda Motor Co., Ltd.

20150034953 - Semiconductor fuse with enhanced post-programming resistance: Post programming resistance of a semiconductor fuse is enhanced by using an implantation to form an amorphous silicon layer and to break up an underlying high-κ/metal gate. Embodiments include forming a shallow trench isolation (STI) region in a silicon substrate, forming a high-κ dielectric layer on the STI region, forming... Agent:

20150034954 - Semiconductor device: Solved is a problem of attenuation of output amplitude due to a threshold value of a TFT when manufacturing a circuit with TFTs of a single polarity. In a capacitor (105), a charge equivalent to a threshold value of a TFT (104) is stored. When a signal is inputted thereto,... Agent:

20150034956 - Array substrate for liquid crystal display and manufacturing method thereof: An array substrate for a liquid crystal display (LCD) and manufacturing method thereof are provided. The array substrate for a liquid crystal display (LCD) includes: a substrate, including: a gate electrode, a pixel electrode, and a common electrode, a gate pad formed on the substrate, and connected to the gate... Agent: Lg Display Co., Ltd.

20150034955 - Thin film transistor array substrate: A pixel electrode is connected to a drain electrode of TFT via a first aperture formed on a second interlayer insulating film, a second aperture, which includes a bottom portion of the first aperture and is formed on a common electrode, and a third aperture, which is included in the... Agent: Mitsubishi Electric Corporation

20150034961 - Aln single crystal schottky barrier diode and method of producing the same: An AlN single crystal Schottky barrier diode including: an AlN single crystal substrate having a defect density of 106 cm−2 or less and a thickness of 300 μm or more; a first electrode formed on one surface of the AlN single crystal substrate; and a second electrode formed on one... Agent:

20150034964 - Gallium nitride-based diode and method of fabricating the same: A GaN-based diode may include an intrinsic GaN-based semiconductor layer, GaN-based semiconductor layers configured to have a first conductivity type and bonded to the intrinsic GaN-based semiconductor layer. A first electrode made of metal is placed on a surface opposite a surface bonded to the GaN-based semiconductor layers of the... Agent:

20150034958 - Hemt-compatible lateral rectifier structure: The present disclosure relates to a high electron mobility transistor compatible power lateral field-effect rectifier device. In some embodiments, the rectifier device has an electron supply layer located over a layer of semiconductor material at a position between an anode terminal and a cathode terminal. A layer of doped III-N... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20150034962 - Integrated circuit with matching threshold voltages and method for making same: An integrated circuit having a substrate, a buffer layer formed over the substrate, a barrier layer formed over the buffer layer, and an isolation region that isolates an enhancement mode device from a depletion mode device. The integrated circuit further includes a first gate contact for the enhancement mode device... Agent:

20150034965 - Light emitting diode and method for manufacturing same: An LED includes a substrate and a semiconductor structure mounted on the substrate. A plurality of first holes and a plurality of second holes are defined in the semiconductor structure. The second holes are located above the first holes and communicate with the first holes. A method for manufacturing the... Agent:

20150034960 - Method of manufacturing semiconductor device: A method of manufacturing a semiconductor device is provided as a semiconductor device manufacturing method that permits an opening to be formed in a good shape in a resist film. This manufacturing method is a semiconductor device manufacturing method having: a step of forming an insulating film 22 of any... Agent: Sumitomo Electric Device Innovations, Inc.

20150034966 - Nitride-based field effect transistor and method of fabricating the same: Disclosed herein is a GaN-based transistor. The GaN-based transistor includes source electrodes, first switching semiconductor layers of a first conductivity type formed under the respective source electrodes, second switching semiconductor layers of a second conductivity type formed under the respective first switching semiconductor layers, and third switching semiconductor layers of... Agent:

20150034957 - Normally-off enhancement-mode misfet: The present disclosure relates to an enhancement mode MISFET device. In some embodiments, the MISFET device has an electron supply layer located on top of a layer of semiconductor material. A multi-dielectric layer, having two or more stacked dielectric materials sharing an interface having negative fixed charges, is disposed above... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20150034959 - Patterned substrate and light emitting diode structure having the same: A light emitting diode structure includes a patterned substrate, an N-type semiconductor layer, a light emitting layer, and a P-type semiconductor layer. Plural protruding portions are formed on a surface of the substrate. A horizontal projection of each of the protruding portions on the surface of the substrate has a... Agent: Lextar Electronics Corporation

20150034968 - Photoelectric conversion element, photoelectric conversion system, and method for production of photoelectric conversion element: A photoelectric conversion element of an embodiment is a photoelectric conversion element which performs photoelectric conversion by receiving illumination light having n light emission peaks having a peak energy Ap (eV) (where 1≦p≦n and 2≦n) of 1.59≦Ap≦3.26 and a full width at half maximum Fp (eV) (where 1≦p≦n and 2≦n),... Agent: Kabushiki Kaisha Toshiba

20150034967 - Semiconductor device: A semiconductor device including a high resistance layer formed on a substrate, the high resistance layer being formed with a semiconductor material doped with as impurity element that makes the semiconductor material highly resistant; a multilayer intermediate layer formed on the high resistance layer; an electron transit layer formed with... Agent: Fujitsu Limited

20150034963 - Semiconductor light emitting element: A semiconductor light emitting element in which changes in light distribution characteristics due to inclination angle of side surfaces are suppressed. The semiconductor light emitting element includes a semiconductor structure having a light extracting surface as its upper surface; a reflecting layer disposed on side surfaces of the semiconductor structure;... Agent:

20150034969 - Method and system for a semiconductor device with integrated transient voltage suppression: A power transistor assembly and method of operating the assembly are provided. The power transistor assembly includes integrated transient voltage suppression on a single semiconductor substrate and includes a transistor formed of a wide band gap material, the transistor including a gate terminal, a source terminal, and a drain terminal,... Agent: General Electric Company

20150034972 - Semiconductor device: A semiconductor device according to an embodiment includes, a first conductivity type semiconductor substrate including one of Si and SiC; a second conductivity type semiconductor region at a surface of the semiconductor substrate, a GaN-based semiconductor layer on the semiconductor substrate, and a lateral semiconductor element at the GaN-based semiconductor... Agent: Kabushiki Kaisha Toshiba

20150034974 - Semiconductor device: A semiconductor device of an embodiment includes: an n-type first SiC epitaxial layer; a p-type second SiC epitaxial layer on the first SiC epitaxial layer containing a p-type impurity and an n-type impurity, the p-type impurity being an element A, the n-type impurity being an element D, the element A... Agent: Kabushiki Kaisha Toshiba

20150034971 - Semiconductor device and method for manufacturing same: [ Solution Means] A semiconductor device 1 has an MIS structure including an SiC epitaxial layer 3, a gate insulating film 9 and a gate electrode 10 formed on the gate insulating film 9. A gate insulating film 9 includes a silicon oxide film in contact with the SiC epitaxial... Agent:

20150034970 - Semiconductor device and method for producing same: A semiconductor device of the present invention includes a semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode being in contact with a surface of the semiconductor layer. The semiconductor layer includes a drift layer that forms the surface of the semiconductor layer and a high-resistance layer... Agent: Rohm Co., Ltd.

20150034973 - Semiconductor device and method of manufacturing the same: A semiconductor device of an embodiment includes: an n-type first SiC epitaxial layer; a p-type second SiC epitaxial layer provided on the first SiC epitaxial layer and contains a p-type impurity and an n-type impurity, the p-type impurity being an element A, the n-type impurity being an element D, the... Agent: Kabushiki Kaisha Toshiba

20150034975 - Optoelectronic modules that have shielding to reduce light leakage or stray light, and fabrication methods for such modules: Various optoelectronic modules are described that include an optoelectronic device (e.g., a light emitting or light detecting element) and a transparent cover. Non-transparent material is provided on the sidewalls of the transparent cover, which, in some implementations, can help reduce light leakage from the sides of the transparent cover or... Agent:

20150034977 - Display device: A display device includes a plurality of pixels in matrix, a substrate on which the plurality of pixels are formed, and a support member under the substrate. The substrate is arranged on a front surface of the support member and a plurality of recesses are formed on a rear surface... Agent:

20150034976 - Led chip-on-board type flexible pcb and flexible heat spreader sheet pad and heat-sink structure using the same: A chip-on-board LED structure having multiple of LED dies, includes a flexible heat spreading pad for spreading heat and having a planar area; a top flexible foil on the flexible heat spreading pad; a dielectric layer on the first flexible foil; a flexible metal film on the dielectric layer; and... Agent: Led Folio Corporation

20150034978 - Light emitter devices and methods for light emitting diode (led) chips: Light emitter devices and methods are provided herein. In some aspects, emitter devices and methods provided herein are for light emitting diode (LED) chips, and can include providing a substrate and a plurality of LED chips over the substrate. The devices and methods described herein can further include providing a... Agent:

20150034979 - Light emitting diode assembly: Disclosed is a light emitting diode assembly. The light emitting diode assembly comprised: a red light emitting diode chip; a short-wavelength light emitting diode chip emitting a light having a wavelength relatively shorter than that of a light emitted from the red light emitting diode chip; a first heat-dispersion member... Agent: Seoul Semiconductor Co., Ltd.

20150034980 - Phosphor led: A phosphor LED for emitting light emitting diode light may include an LED designed for emitting blue primary light; and an LED phosphor designed and arranged such that it is excited by the primary light during operation and emits secondary light as a consequence, said secondary light forming at least... Agent:

20150034981 - Chip component: [Effect] Because the external connection electrode (12) provided on the chip resistor (10) includes a solder layer (124) on the outside connection terminal, during mounting of the chip resistor (10), the chip resistor (10) can be easily mounted without solder printing. Further, the amount of solder used for mounting is... Agent: Rohm Co., Ltd.

20150034982 - Light emitting diode structure: A light emitting diode structure is provided. The light emitting diode structure comprises a substrate, a light emitting multi-layer structure, a first current blocking layer, a first current spreading layer, a second current blocking layer and a second current spreading layer. The light emitting multi-layer structure is formed on the... Agent: Lextar Electronics Corporation

20150034989 - Anisotropic conductive adhesive and method for manufacturing same, light-emitting device and method for manufacturing same: an anisotropic conductive adhesive which uses conductive particles where a silver-based metal is used as a conductive layer, having high light reflectance and excellent migration resistance is provided. The anisotropic conductive adhesive includes light reflective conductive particles in an insulating adhesive resin. The light reflective conductive particle includes a light... Agent:

20150034990 - Controlling led emission pattern using optically active materials: A light emission device comprising a light emitting element, a wavelength conversion (e.g. phosphor) element, and a filter that reduces Color over Angle (CoA) effects by at least partially reflecting light from the light emitting element that strike the filter at near-normal angles of incidence. In some embodiments, a combined... Agent:

20150034986 - Led package: An LED package includes a chip carrier, an adhesive layer, one high-voltage LED die, and an encapsulating member. The chip carrier defines a receiving space. The adhesive layer is disposed in the receiving space and has a thermal conductivity of larger than or equal to 1 W/mK. The high-voltage LED... Agent:

20150034992 - Light emitting device: A light emitting device includes a substrate, metallization, a light emitting element, conducting wire, light reflective resin, and insulating material. The metallization is provided on a surface of the substrate that is made of insulating substance. The light emitting element is mounted on the substrate. The conducting wire electrically connects... Agent: Nichia Corporation

20150034988 - Light emitting device and light emitting device package: Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a first electrode, a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer on the first electrode, a nano-tube layer including a plurality of carbon nano... Agent:

20150034987 - Light emitting device and method for manufacturing light emitting device: A semiconductor device includes a substrate; a light emitting element flip-chip mounted on the substrate; a phosphor-containing member provided at least above the light emitting element and separated from the light emitting element; and a first reflecting member configured to cover the phosphor-containing member, at least one of a side... Agent:

20150034983 - Light emitting device and method for producing same: There is provided a light emitting device highly resistant to the environment, and having good heat resistance, light resistance and gas barrier property, and a method for producing same. With the light emitting device, a substrate 2 and interconnect patterns 5A, 5B formed on the surface thereof are covered with... Agent: Sharp Kabushiki Kaisha

20150034991 - Light emitting device, light emitting device package: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the... Agent:

20150034994 - Light-emiting device, light-emiting device package, method of manufacturing light-emiting device, and method of packaging light-emiting device: A light-emitting device including a phosphor layer, a light-emitting device package employing the light-emitting device, a method of manufacturing the light-emitting device, and a method of packaging the light-emitting device. The light-emitting device includes: a light-transmissive substrate having a top surface, a bottom surface, and side surfaces; a light-emitting unit... Agent:

20150034984 - Method and apparatus for molding encapsulant of light emitting device: Disclosed is an apparatus for forming an encapsulation material for a light emitting device. The apparatus for forming an encapsulation material comprises: an upper mold on which is mounted a substrate having a plurality of optical semiconductors; a lower mold arranged opposite the upper mold; a resin-capture space for capturing... Agent: Seoul Semiconductor Co., Ltd.

20150034985 - Semiconductor light emitting device and method for manufacturing same: According to one embodiment, the optical layer has a larger planar size than the semiconductor layer. The optical layer is transmissive to emission light of the light emitting layer. The first insulating film is provided on a side surface of the semiconductor layer continued from the first surface. The metal... Agent: Kabushiki Kaisha Toshiba

20150034993 - Semiconductor light-emitting device: A semiconductor light-emitting device includes a substrate, an LED chip mounted on the substrate, and a resin package covering the LED chip. The substrate includes a base and a wiring pattern formed on the base. The resin package includes a lens. The base includes an upper surface, a lower surface... Agent:

20150034998 - Lead frame, lead frame with resin attached thereto, resin package, light emitting device, and method for manufacturing resin package: A lead frame includes at least one row of a plurality of unit regions arranged in a first direction. Each of the unit regions includes: a first lead; a second lead; and an isolation region configured to isolate the first lead from the second lead, the isolation region including a... Agent:

20150034999 - Light emitting device, light emitting device package, and lighting system: Provided is a light emitting device. The light emitting device includes a light emitting structure layer comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. A first electrode is connected to the first conductive type semiconductor layer and includes first pad, plurality... Agent:

20150035000 - Light emitting element and light emitting device using the same: An object of the present invention is to provide a light emitting element having slight increase in driving voltage with accumulation of light emitting time. Another object of the invention is to provide a light emitting element having slight increase in resistance value with increase in film thickness. A light... Agent:

20150034996 - Light-emitting device: A light-emitting device comprises a substrate; a first semiconductor stack formed on the substrate; a connecting part formed on the first semiconductor stack; and a plurality of droplets formed near the connecting part, wherein the plurality of droplets comprises a material same as that of the connecting part.... Agent: Epistar Corporation

20150034995 - Semiconductor device with combined passive device on chip back side: Semiconductor chips are described that combine a semiconductor device and a capacitor onto a single substrate such that the semiconductor device and the capacitor are electrically isolated from each other. In one example, a semiconductor chip includes a substrate having a first side and a second side, wherein the second... Agent: Infineon Technologies Austria Ag

20150034997 - Semiconductor light emitting element and light emitting device: A semiconductor light emitting element includes a first substrate, a stacked body, an electrode, and a conductive layer. The first substrate has a first face and a first side face. The first side face intersects the first face. The first substrate includes a plurality of conductive portions and a plurality... Agent: Kabushiki Kaisha Toshiba

20150035001 - Light-emitting device, electronic device, and lighting device: A lightweight flexible light-emitting device that is less likely to be broken is provided. The light-emitting device includes a first flexible substrate, a second flexible substrate, an element layer, a first bonding layer, and a second bonding layer. The element layer includes a light-emitting element. The element layer is provided... Agent: Semiconductor Energy Laboratory Co., Ltd.

20150035003 - Dual trench-gate igbt structure: Aspects of the present disclosure describe an IGBT device including a substrate including a bottom semiconductor layer of a first conductivity type and an upper semiconductor layer of a second conductivity type, at least one first gate formed in a corresponding first trench disposed over the substrate, and a second... Agent: Alpha & Omega Semiconductor Incorporated

20150035004 - Semiconductor devices with graded dopant regions: Most semiconductor devices manufactured today, have uniform dopant concentration, either in the lateral or vertical device active (and isolation) regions. By grading the dopant concentration, the performance in various semiconductor devices can be significantly improved. Performance improvements can be obtained in application specific areas like increase in frequency of operation... Agent:

20150035002 - Super junction semiconductor device and manufacturing method: A method for manufacturing a super junction semiconductor device includes forming a trench in an n-doped semiconductor body and forming a first p-doped semiconductor layer lining sidewalls and a bottom side of the trench. The method further includes removing a part of the first p-doped semiconductor layer at the sidewalls... Agent:

20150035006 - Manufacturing method of semiconductor device: A semiconductor device includes a first-conductivity-type semiconductor layer including an active region in which a transistor having impurity regions is formed and a marginal region surrounding the active region, a second-conductivity-type channel layer formed between the active region and the marginal region and forming a front surface of the semiconductor... Agent:

20150035005 - Monolithic igbt and diode structure for quasi-resonant converters: This invention discloses a semiconductor power device formed in a semiconductor substrate. The semiconductor power device further includes a channel stop region near a peripheral of the semiconductor substrate wherein the channel stop region further includes a peripheral terminal of a diode corresponding with another terminal of the diode laterally... Agent:

20150035007 - Silicon controlled rectifier for high voltage applications: In a silicon-controlled rectifier, an anode region includes p-type anode well regions which are laterally surrounded by an n-type well region. A length of a p-type anode well region, as measured in a first direction, is greater than a width of the p-type anode well region, as measured in a... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20150035009 - Fin field effect transistor, semiconductor device including the same and method of forming the semiconductor device: A fin field effect transistor includes a first fin structure and a second fin structures both protruding from a substrate, first and second gate electrodes on the first and second fin structures, respectively, and a gate dielectric layer between each of the first and second fin structures and the first... Agent:

20150035008 - Finfet devices including high mobility channel materials with materials of graded composition in recessed source/drain regions and methods of forming the same: A finFET device can include a high mobility semiconductor material in a fin structure that can provide a channel region for the finFET device. A source/drain recess can be adjacent to the fin structure and a graded composition epi-grown semiconductor alloy material, that includes a component of the high mobility... Agent: Samsung Electronics Co., Ltd.

20150035010 - Semiconductor apparatus and manufacturing method of the semiconductor apparatus: Provided is a semiconductor apparatus including a channel layer, an upper barrier layer that is provided on the channel layer, a first barrier layer that constitutes a boundary layer on a side of the channel layer in the upper barrier layer, a second barrier layer that is provided in a... Agent:

20150035011 - Heterojunction bipolar transistors with reduced parasitic capacitance: Fabrication methods, device structures, and design structures for a heterojunction bipolar transistor. A trench isolation region and a collector are formed in a semiconductor substrate. The collector is coextensive with the trench isolation region. A first semiconductor layer is formed that includes a of single crystal section disposed on the... Agent: International Business Machines Corporation

20150035012 - Methods and apparatus for bipolar junction transistors and resistors: Methods and apparatus for bipolar junction transistors (BJTs) are disclosed. A BJT comprises a collector made of p-type semiconductor material, a base made of n-type well on the collector; and an emitter comprising a p+ region on the base and a SiGe layer on the p+ region. The BJT can... Agent:

20150035013 - Image pickup device: An image pickup device according to the present invention is an image pickup device in which a plurality of pixel are arranged in a semiconductor substrate. Each of the plurality of pixels includes a photoelectric conversion element, a floating diffusion (FD) region, a transfer gate that transfers charges in the... Agent:

20150035014 - Pin diode structure having surface charge suppression: A semiconductor structure having: a silicon structure; and a plurality of laterally spaced PiN diodes formed in the silicon structure; and a surface of the silicon structure configured to reduce reverse bias leakage current through the PiN diodes. In one embodiment, a gate electrode structures is disposed on a surface... Agent: Raytheon Company

20150035015 - Method of manufacturing semiconductor device and semiconductor device: To provide a semiconductor device having a vertical JFET excellent in off-state performance without reducing a production yield. A gate region quadrangular in the cross-section along a channel width direction is formed below a source region by impurity ion implantation. By first etching, the source region over the upper surface... Agent:

20150035017 - Contact structure of semiconductor device: The disclosure relates to a semiconductor device. An exemplary structure for a contact structure for a semiconductor device comprises a substrate comprising a major surface; a fin structure extending upward from the substrate major surface, wherein the fin structure comprises a first fin, a second fin, and a third fin... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20150035018 - Devices and methods of forming bulk finfets with lateral seg for source and drain on dielectrics: Devices and methods for forming semiconductor devices with FinFETs are provided. One intermediate semiconductor device includes, for instance: a substrate with at least one fin with at least one channel; at least one gate over the channel; at least one hard-mask over the gate; and at least one spacer disposed... Agent: Globalfoundries Inc.

20150035019 - Method of forming fins from different materials on a substrate: A method of forming fins of different materials includes providing a substrate with a layer of a first material having a top surface, masking a first portion of the substrate leaving a second portion of the substrate exposed, etching a first opening at the second portion, forming a body of... Agent: Qualcomm Incorporated

20150035026 - Middle-of-line borderless contact structure and method of forming: Various embodiments disclosed include semiconductor structures and methods of forming such structures. In one embodiment, a method includes: providing a semiconductor structure including: a substrate; at least one gate structure overlying the substrate; and an interlayer dielectric overlying the substrate and the at least one gate structure; removing the ILD... Agent:

20150035021 - Misfet device and method of forming the same: Embodiments of the present disclosure include a method for forming a semiconductor device, a method for forming a MISFET device, and a MISFET device. An embodiment is a method for forming a semiconductor device, the method including forming a source/drain over a substrate, forming a first etch stop layer on... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20150035016 - Nitride spacer for protecting a fin-shaped field effect transistor (finfet) device: Approaches for protecting a semiconductor device (e.g., a fin field effect transistor device (FinFET)) using a nitride spacer are provided. Specifically, a nitride spacer is formed over an oxide and a set of fins of the FinFET device to mitigate damage during subsequent processing. The nitride spacer is deposited before... Agent: Globalfoundries Inc.

20150035023 - Semiconductor device and method for fabricating the same: A semiconductor device may include first and second fins formed side by side on a substrate, a first elevated doped region formed on the first fin and having a first doping concentration of impurities, a second elevated doped region formed on the second fin, and a first bridge connecting the... Agent:

20150035022 - Semiconductor device having passing gate and method for fabricating the same: A semiconductor device includes passing gates. In the semiconductor device, a passing gate formed in a device isolation film is vertically positioned at a deeper and lower level than an operation gate formed in an active region defined by the device isolation film such that the passing gate does not... Agent: Sk Hynix Inc.

20150035025 - Semiconductor integrated circuit devices including gates having connection lines thereon: Provided are semiconductor integrated circuit (IC) devices including gate patterns having a step difference therebetween and a connection line interposed between the gate patterns. The semiconductor IC device includes a semiconductor substrate including a peripheral active region, a cell active region, and a device isolation layer. Cell gate patterns are... Agent:

20150035020 - Systems and methods for fabricating semiconductor devices at different levels: Systems and methods are provided for fabricating semiconductor device structures on a substrate. For example, a substrate including a first region and a second region is provided. One or more first semiconductor device structures are formed on the first region. One or more semiconductor fins are formed on the second... Agent: Taiwan Semiconductor Manufacturing Company Limited

20150035024 - Transistor and method of manufacturing the same: A transistor includes a substrate, a gate structure and impurity regions. The substrate is divided into a field region and an active region by an isolation layer pattern. The field region has the isolation layer pattern thereon, and the active region has no isolation layer pattern thereon. The gate structure... Agent:

20150035027 - Semiconductor component with a window opening as an inerface for ambient coupling: A window opening in a semiconductor component is produced on the basis of a gate structure which serves as an efficient etch resist layer in order to reliably etch an insulation layer stack without exposing the photosensitive semiconductor area. The polysilicon in the gate structure is then removed on the... Agent:

20150035028 - Image sensor with buried light shield and vertical gate: A pixel in an image sensor can include a photodetector and a storage region disposed in one substrate, or a photodetector disposed in one substrate and a storage region in another substrate. A buried light shield is disposed between the photodetector and the storage region. A sense region, such as... Agent: Apple Inc.

20150035029 - Imaging device, electronic apparatus, and method of manufacturing imaging device: An imaging device includes: a photodiode configured to perform photoelectric conversion and to generate electric charge in accordance with an amount of received light; a floating diffusion section configured to accumulate the electric charge generated in the photodiode; a reading circuit configured to output a pixel signal having a voltage... Agent:

20150035030 - Solid-state imaging apparatus for causing an fd capacitor value to be variable without increasing a number of elements: A solid-state imaging apparatus wherein an FD capacitor value is variable without increasing the number of elements. There is provided a solid-state imaging apparatus including a plurality of photoelectric conversion elements arranged in a horizontal direction and a vertical direction, for generating an electric charge by photoelectric conversion; a plurality... Agent:

20150035031 - Magnetic random access memory device and method of manufacturing the same: In an MRAM device, the MRAM includes a magnetic tunnel junction (MTJ) structure and a protection layer on a sidewall of the MTJ structure. The protection layer includes a fluorinated metal oxide. When an MRAM device in accordance with example embodiments is manufactured, a metal layer may be formed to... Agent:

20150035032 - Nonvolatile semiconductor memory device including memory cell array with pseudo separate source line structure: A memory cell array of a nonvolatile semiconductor memory device is provided which includes a first memory cell including a first variable resistance element and a first access transistor connected to each other, and having a first node connected to a first bit line and one end of the first... Agent:

20150035033 - Light emitting device: A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line.... Agent:

20150035035 - Non-volatile memory device: According to one embodiment, a non-volatile memory device includes abase layer, a first stacked unit and a second stacked unit disposed above the base layer and arranged in parallel to each other and spaced apart from each other in a first direction, in a plane parallel to the base layer,... Agent: Kabushiki Kaisha Toshiba

20150035036 - Nonvolatile semiconductor memory device and method of fabricating the same: According to an aspect of the invention, a first insulating layer is buried in a first trench provided in at least one of an interstice between first and second semiconductor pillars, a side surface portion of the first semiconductor pillar opposed to the second semiconductor pillar, and a side surface... Agent: Kabushiki Kaisha Toshiba

20150035037 - Semiconductor memory device and method for manufacturing same: According to one embodiment, the select transistor is provided between a memory array region and the layer selection portion. The channel body and the charge storage film are provided in the memory array region. The select transistor includes a gate electrode provided on a side wall of one of the... Agent: Kabushiki Kaisha Toshiba

20150035034 - Split gate non-volatile memory cell: A method of making a semiconductor structure uses a substrate having a background doping of a first type. A gate structure has a gate dielectric on the substrate and a select gate layer on the gate dielectric. Implanting is performed into a first portion of the substrate adjacent to a... Agent:

20150035038 - Semiconductor structure and method for forming the same: Various embodiments provide semiconductor structures and methods for forming the same. In an exemplary method, a semiconductor substrate is provided. A first stop layer, a first sacrificial layer, a second stop layer, and a second sacrificial layer are formed sequentially on the semiconductor substrate. The second sacrificial layer, the second... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20150035039 - Logic finfet high-k/conductive gate embedded multiple time programmable flash memory: A method for fabricating a multiple time programmable (MTP) device includes forming fins of a first conducting type on a substrate of a second conducting type. The method further includes forming a floating gate dielectric to partially surround the fins. The method also includes forming a floating gate on the... Agent: Qualcomm Incorporated

20150035040 - Split gate non-volatile flash memory cell having a silicon-metal floating gate and method of making same: A non-volatile memory cell includes a substrate of a first conductivity type with first and second spaced apart regions of a second conductivity type, forming a channel region therebetween. A select gate is insulated from and disposed over a first portion of the channel region which is adjacent to the... Agent:

20150035043 - Charge trapping dielectric structures: A dielectric structure may be arranged having a thin nitrided surface of an insulator with a charge blocking insulator over the nitrided surface. The insulator may be formed of a number of different insulating materials such as a metal oxide, a metal oxycarbide, a semiconductor oxide, or oxycarbide. In an... Agent:

20150035041 - Non-volatile memory device: According to one embodiment, a non-volatile memory device includes a first stacked electrode provided above a underlying layer, a second stacked electrode juxtaposed with the first stacked electrode above the underlying layer, a plurality of first semiconductor layers piercing the first stacked electrode in a direction perpendicular to the underlying... Agent: Kabushiki Kaisha Toshiba

20150035042 - Nonvolatile memory device and method of manufacturing the same: A nonvolatile memory device includes gate electrodes three dimensionally arranged on a semiconductor substrate, a semiconductor pattern extending from the semiconductor substrate and crossing sidewalls of the gate electrodes, a metal liner pattern formed between the semiconductor pattern and formed on a top surface and a bottom surface of each... Agent:

20150035044 - Method to improve charge trap flash memory core cell performance and reliability: A semiconductor processing method to provide a high quality bottom oxide layer and top oxide layer in a charged-trapping NAND and NOR flash memory. Both the bottom oxide layer and the top oxide layer of NAND and NOR flash memory determines array device performance and reliability. The method describes overcomes... Agent:

20150035045 - Nonvolatile semiconductor memory device and method of manufacturing the same: A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film that is formed on the semiconductor layer and includes a first organic molecular film including first organic molecules each having an alkyl molecular chain as the main chain; a charge storage layer formed on... Agent: Kabushiki Kaisha Toshiba

20150035046 - Semiconductor device including field effect transistor: A semiconductor device includes a fin portion protruding from a substrate. The fin portion includes a base part, an intermediate part on the base part, and a channel part on the intermediate part. A width of the intermediate part is less than a width of the base part and greater... Agent:

20150035047 - Dual trench rectifier and method for forming the same: A structure of dual trench rectifier comprises of the following elements. A plurality of trenches are formed parallel in an n− epitaxial layer on an n+ semiconductor substrate and spaced with each other by a mesa. A plurality of recesses are formed on the mesas. Each the trench has a... Agent: Chip Integration Tech. Co., Ltd.

20150035048 - A supper junction structure includes a thickness of first and second semiconductor regions gradually changed from a transistor area into a termination area: A super junction semiconductor device includes a super junction structure including first and second areas alternately arranged along a first lateral direction and extending in parallel along a second lateral direction. Each one of the first areas includes a first semiconductor region of a first conductivity type. Each one of... Agent: Infineon Technologies Austria Ag

20150035049 - Vertical semiconductor mosfet device with double substrate-side multiple electrode connections and encapsulation: A semiconductor device with substrate-side exposed device-side electrode (SEDE) is disclosed. The semiconductor device has semiconductor substrate (SCS) with device-side, substrate-side and semiconductor device region (SDR) at device-side. Device-side electrodes (DSE) are formed for device operation. A through substrate trench (TST) is extended through SCS, reaching a DSE turning it... Agent:

20150035050 - Semiconductor device with air gap and method for fabricating the same: A semiconductor device includes a plurality of first conductive structures formed over a substrate, second conductive structures each formed between neighboring first conductive structures of the first conductive structures, air gaps each formed between the second conductive structures and the neighboring first conductive structures thereof, third conductive structures each capping... Agent: Sk Hynix Inc.

20150035051 - Configurations and methods for manufacturing charged balanced devices: This invention discloses a semiconductor power device disposed in a semiconductor substrate and the semiconductor substrate has a plurality of deep trenches. The deep trenches are filled with an epitaxial layer thus forming a top epitaxial layer covering areas above a top surface of the deep trenches covering over the... Agent:

20150035052 - Contact power rail: A method for forming CA power rails using a three mask decomposition process and the resulting device are provided. Embodiments include forming a horizontal diffusion CA power rail in an active layer of a semiconductor substrate using a first color mask; forming a plurality of vertical CAs in the active... Agent:

20150035053 - Device and method for a ldmos design for a finfet integrated circuit: Semiconductor devices and methods for manufacturing an LDMOS FinFET integrated circuit. The intermediate semiconductor device includes a substrate, a first well in the substrate, a second well in the substrate, and at least two polysilicon gates. The first well overlaps the second well and the at least one first gate... Agent: Globalfoundries Inc.

20150035054 - Semiconductor device: A device includes a first transistor including a first gate electrode including first and second parallel electrode portions each extending in a first direction, and a first connecting electrode portion extending in a second direction approximately orthogonal to the first direction and connecting one ends of the first and second... Agent:

20150035055 - Semiconductor device and manufacturing method therefor: A method for manufacturing a semiconductor device includes providing a substrate, forming a pseudo-gate stack and sidewalls on the substrate, forming an S/D region on both sides of the pseudo-gate stack, and forming a stop layer and a first interlayer dielectric layer covering the entire semiconductor device; removing part of... Agent: Institute Of Microelectornics, Chinese Academy Of Sciences

20150035056 - Semiconductor device: A semiconductor device includes an N−-type well 13, a P-type body diffusion layer 14, an N+-type source diffusion layer 18, an N+-type drain diffusion layer 19, and a P+-type body contact region 32. A plurality of the P+-type body contact regions 32 are located along gate electrodes 17a and 17b,... Agent:

20150035057 - Semiconductor device including metal silicide layer and method for manufacturing the same: A device formed from a method of fabricating a fine metal silicide layer having a uniform thickness regardless of substrate doping. A planar vacancy is created by the separation of an amorphousized surface layer of a silicon substrate from an insulating layer, a metal source enters the vacancy through a... Agent:

20150035059 - Method, structure and design structure for customizing history effects of soi circuits: A design structure is embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes a high-leakage dielectric formed over an active region of a FET and a low-leakage dielectric formed on the active region and adjacent the high-leakage dielectric. The low-leakage dielectric has... Agent:

20150035058 - Silicon nitride film, and semiconductor device and method of manufacturing the same: An object of the present invention is to apply an insulating film of cure and high quality that is suitably applicable as gate insulating film and protective film to a technique that the insulating film is formed on the glass substrate under a temperature of strain point or lower, and... Agent:

20150035060 - Field effect transistor (fet) with self-aligned contacts, integrated circuit (ic) chip and method of manufacture: Field Effect Transistors (FETs), Integrated Circuit (IC) chips including the FETs, and a method of forming the FETs and IC. FET locations and adjacent source/drain regions are defined on a semiconductor wafer, e.g., a silicon on insulator (SOI) wafer. Source/drains are formed in source/drains regions. A stopping layer is formed... Agent: International Business Machines Corporation

20150035061 - Semiconductor device and method for fabricating the same: Provided are a multi-gate transistor device and a method for fabricating the same. The method for fabricating the multi-gate transistor device includes forming first and second fins shaped to protrude on a substrate and aligned and extending in a first direction and a trench separating the first and second fins... Agent: Samsung Electronics Co., Ltd.

20150035068 - Airgap structure and method of manufacturing thereof: A process for fabricating a gate structure, the gate structure having a plurality of gates defined by a network of spaces. The word line (WL) spaces within a dense WL region having airgaps and those spaces outside of the dense WL being substantially free of airgaps. A gate structure having... Agent:

20150035066 - Fet chip: An FET chip is configured to include an oscillation suppression circuit that has a gate capacitance C formed between a gate electrode 5c and two-dimensional electron gas, and a channel resistance R between the gate electrode 5c and a source electrode 7c, and therefore the oscillation suppression circuit is loaded... Agent: Mitsubishi Electric Corporation

20150035062 - Integrated circuits having finfets with improved doped channel regions and methods for fabricating same: Integrated circuits and methods for fabricating integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes forming a channel region of a fin structure with a first side, a second side, an exposed first end surface and an exposed second end surface. A gate is... Agent: Globalfoundries, Inc.

20150035064 - Inverse side-wall image transfer: Methods forming structures on a chip. The methods include etching a mandrel layer that is disposed over a bottom layer to be patterned to form gaps between plateaus of mandrel material; forming spacers on sidewalls of the plateaus; forming a hardmask material in gaps between the spacers; removing the spacers... Agent: International Business Machines Corporation

20150035067 - Low rdson device and method of manufacturing the same: A device and method of making thereof are disclosed. The device includes a substrate having a device region for a switch transistor. The device includes a switch transistor having a gate disposed on the substrate in the device region and first and second heavily doped regions disposed adjacent to the... Agent:

20150035063 - Reduced spacer thickness in semiconductor device fabrication: In aspects of the present disclosure, a reliable encapsulation of a gate dielectric is provided at very early stages during fabrication. In other aspects, a semiconductor device is provided wherein a reliable encapsulation of a gate dielectric material is maintained, the reliable encapsulation being present at early stages during fabrication.... Agent: Global Foundries Inc

20150035065 - Semiconductor device and method for fabricating the same: A semiconductor device includes a substrate with an active region defined by a device isolation layer. A word line extends over the active region in a first direction, and a plurality of interconnections extends over the word line in a second direction perpendicular to the first direction. A contact pad... Agent:

20150035073 - Enabling enhanced reliability and mobility for replacement gate planar and finfet structures: A method for semiconductor fabrication includes forming at least one of a diffusion barrier layer and a metal containing layer over a dielectric layer in a gate cavity. A first anneal is performed to diffuse elements from the at least one of the diffusion barrier layer and the metal containing... Agent: International Business Machines Corporaiton

20150035069 - Finfet and method for fabricating the same: A method for fabricating fin-shaped field-effect transistor (FinFET) is disclosed. The method includes the steps of: providing a substrate; forming a fin-shaped structure in the substrate; forming a shallow trench isolation (STI) on the substrate and around the bottom portion of the fin-shaped structure; forming a first gate structure on... Agent: United Microelectronics Corp.

20150035074 - Finfet devices including recessed source/drain regions having optimized depths and methods of forming the same: A finFET device can include a source/drain contact recess having an optimal depth beyond which an incremental decrease in a spreading resistance value for a horizontal portion of a source/drain contact in the recess provided by increased depth may be less than an incremental increase in total resistance due to... Agent:

20150035075 - Gate strain induced work function engineering: A stack of a gate dielectric layer and a workfunction material layer are deposited over a plurality of semiconductor material portions, which can be a plurality of semiconductor fins or a plurality of active regions in a semiconductor substrate. A first gate conductor material applying a first stress is formed... Agent:

20150035078 - Metal gate transistor and integrated circuits: A transistor includes a gate dielectric structure over a substrate and a work function metallic layer over the gate dielectric structure. The work function metallic layer is configured to adjust a work function value of a gate electrode of the transistor. The transistor also includes a silicide structure over the... Agent:

20150035070 - Method and layout of an integrated circuit: An integrated circuit layout includes a first active region, a second active region, a first PODE (poly on OD edge), a second PODE, a first transistor and a second transistor. The first transistor, on the first active region, includes a gate electrode, a source region and a drain region. The... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20150035072 - Methods and apparatuses for forming multiple radio frequency (rf) components associated with different rf bands on a chip: A method includes forming a first gate oxide in a first region and in a second region of a wafer. The method further includes performing first processing to form a second gate oxide in the second region. The second gate oxide has a different thickness than the first gate oxide.... Agent: Qualcomm Incorporated

20150035077 - Mos transistors including a recessed metal pattern in a trench: Methods of manufacturing a MOS transistor are provided. The methods may include forming first and second trenches. The methods may further include forming first metal patterns within portions of the first and second trenches. The methods may additionally include removing the first metal patterns from the second trench while at... Agent:

20150035076 - Self-aligned gate electrode diffusion barriers: A structure that provides a diffusion barrier between two doped regions. The structure includes a diffusion barrier including a semiconductor layer comprising a first doped region and a second doped region; and a diffusion barrier separating the first doped region and the second doped region, wherein the diffusion barrier comprises... Agent:

20150035071 - Semiconductor device and fabricating the same: The present disclosure provides a method for fabricating an integrated circuit device. The method includes providing a precursor including a substrate having first and second metal-oxide-semiconductor (MOS) regions. The first and second MOS regions include first and second gate regions, semiconductor layer stacks, and source/drain regions respectively. The method further... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20150035079 - Method for core and in/out-put device reliability improve at high-k last process: A method for fabricating a semiconductor device includes providing a semiconductor substrate, forming on the semiconductor substrate a dummy gate interface layer and a dummy gate of a core device and a gate interface layer and a dummy gate of an IO device, removing the dummy gates of the core... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20150035080 - Semiconductor device: Disclosed is a semiconductor device in which a resistance component resulting from wiring is reduced. A plurality of transistor units are arranged side by side in a first direction (Y direction in the view), each of which has a plurality of transistors. The gate electrodes of the transistors extend in... Agent:

20150035081 - Inverse side-wall image transfer: Semiconductor devices include a set of fin field effect transistors (FETs), each having a fin structure formed from a monocrystalline substrate. A trench between fin structures of respective fin FETs is formed by a cut in the monocrystalline substrate that has a width smaller than a width of the fin... Agent: International Business Machines Corporation

20150035082 - Semiconductor device structures including energy barriers, and related methods: A semiconductor device structure includes a transistor with an energy barrier beneath its transistor channel. The energy barrier prevents leakage of stored charge from the transistor channel into a bulk substrate. Methods for fabricating semiconductor devices that include energy barriers are also disclosed.... Agent:

20150035085 - Doped high-k dielectrics and methods for forming the same: Embodiments provided herein describe high-k dielectric layers and methods for forming high-k dielectric layers. A substrate is provided. The substrate includes a semiconductor material. The substrate is exposed to a hafnium precursor. The substrate is exposed to a zirconium precursor. The substrate is exposed to an oxidant only after the... Agent: Intermolecular Inc.

20150035083 - Mos transistors and fabrication method thereof: A method is provided for fabricating an MOS transistor. The method includes providing a semiconductor substrate; forming a metal gate structure; and forming a source region and a drain region. The method also includes forming a contact-etch-stop layer; forming an interlayer dielectric layer on the contact-etch-stop layer and the metal... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20150035084 - Mos transistors and fabrication method thereof: A method is provided for fabricating an MOS transistor. The method includes providing a semiconductor substrate; and forming a ploy silicon dummy gate structure having a high-K gate dielectric layer, a high-K gate dielectric protection layer containing nitrogen and a poly silicon dummy gate on the semiconductor substrate. The method... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20150035087 - Method for manufacturing dummy gate in gate-last process and dummy gate in gate-last process: A method for manufacturing a dummy gate in a gate-last process and a dummy gate in a gate-last process are provided. The method includes: providing a semiconductor substrate; growing a gate oxide layer on the semiconductor substrate; depositing bottom-layer amorphous silicon on the gate oxide layer; depositing an ONO structured... Agent:

20150035086 - Methods of forming cap layers for semiconductor devices with self-aligned contact elements and the resulting devices: One method disclosed herein includes forming an etch stop layer above recessed sidewall spacers and a recessed replacement gate structure and, with the etch stop layer in position, forming a self-aligned contact that is conductively coupled to the source/drain region after forming the self-aligned contact. A device disclosed herein includes... Agent: Globalfoundries Inc.

20150035088 - Semiconductor structures: A method is provided for fabricating a semiconductor structure. The method includes providing a semiconductor substrate having a plurality of first doped regions and second doped regions; and forming a first dielectric layer on the semiconductor substrate. The method also includes forming a first gate dielectric layer and a second... Agent:

20150035093 - Inertial and pressure sensors on single chip: In one embodiment, the process flow for a capacitive pressures sensor is combined with the process flow for an inertial sensor. In this way, an inertial sensor is realized within the membrane layer of the pressure sensor. The device layer is simultaneously used as z-axis electrode for out-of-plane sensing in... Agent:

20150035089 - Mems device and method of forming the same: A method for forming a MEMS device is provided. The method includes the following steps of providing a substrate having a first portion and a second portion; fabricating a membrane type sensor on the first portion of the substrate; and fabricating a bulk silicon sensor on the second portion of... Agent: Taiwan Semiconductor Manufacturing Company Limited

20150035091 - Process for manufacturing a packaged device, in particular a packaged micro-electro-mechanical sensor, having an accessible structure, such as a mems microphone and packaged device obtained thereby: In order to manufacture a packaged device, a die having a sensitive region is bonded to a support, and a packaging mass of moldable material is molded on the support so as to surround the die. During molding of the packaging mass, a chamber is formed, which faces the sensitive... Agent:

20150035092 - Sensors and method of operating sensor: Sensors and methods of operating sensors are described herein. One sensor includes a number of III-nitride strain sensitive devices and a number of passive electrical components that connects each of them to one of the III-nitride strain sensitive devices.... Agent:

20150035090 - Stacked die package for mems resonator system: In a packaging structure for a microelectromechanical-system (MEMS) resonator system, a resonator-control chip is mounted on a lead frame having a plurality of electrical leads, including electrically coupling a first contact on a first surface of the resonator-control chip to a mounting surface of a first electrical lead of the... Agent: Sitime Corporation

20150035094 - Microphone assembly having at least two mems microphone components: A microphone assembly includes two MEMS components each having a micromechanical microphone structure, each microphone structure having: a diaphragm configured to be deflected by sound pressure and provided with at least one diaphragm electrode of a capacitor system; and a stationary acoustically permeable counter-element that acts as bearer for at... Agent: Robert Bosch Gmbh

20150035096 - Magnetic memory device and method of fabricating the same: Provided are a magnetic memory device and a method of fabricating the same. The device may include a cell selection device, a magnetic tunnel junction (MTJ), and a lower electrode connecting them. The lower electrode may include a vertical portion and a horizontal portion laterally extending from a side surface... Agent:

20150035095 - Magnetic memory devices having a perpendicular magnetic tunnel junction: A magnetic memory device may include a free magnetic structure and a reference magnetic structure that are separated from each other by a tunnel barrier. The free magnetic structure may include an exchange-coupling layer, and first and second free layers that are separated from each other by the exchange-coupling layer.... Agent:

20150035098 - Memory cell with schottky diode: Memory cell comprising two conductors, with a serially connected magnetic storage element and a Schottky diode between the two conductors. The Schottky diode provides a unidirectional conductive path between the two conductors and through the element. The Schottky diode is formed between a metal layer in one of the two... Agent:

20150035097 - Semiconductor storage device: A memory includes a semiconductor substrate. Magnetic tunnel junction elements are provided above the semiconductor substrate. Each of the magnetic tunnel junction elements stores data by a change in a resistance state, and the data is rewritable by a current. Cell transistors are provided on the semiconductor substrate. Each of... Agent:

20150035099 - Method and system for providing magnetic junctions including a package structure usable in spin transfer torque memories: A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic includes a pinned layer, a nonmagnetic spacer layer, a free layer, and package structure(s). The pinned layer has a pinned layer perimeter and a top surface. The nonmagnetic spacer layer is on... Agent:

20150035106 - Back side illumination image sensor with low dark current: An integrated circuit includes a back side illuminated image sensor formed by a substrate supporting at least one pixel, an interconnect part situated above a front side of the substrate and an anti-reflective layer situated above a back side of the substrate. The anti-reflective layer may be formed of a... Agent: Commissariat A L'energie Atomique Et Aux Energies Alternatives

20150035107 - Color image sampling and reconstruction: An image capture apparatus that includes an array of color filters for green, red, and magenta colors arranged over a semiconductor substrate in the manner of a primary color Bayer pattern except a magenta color replaces the blue color. Light passing through the magenta color filter is integrated separately in... Agent:

20150035108 - High density capacitor integrated into focal plane array processing flow: Methods and structures of photodetectors are described. The structure may include a readout integrated circuit substrate having an internally integrated capacitor. The structure may additionally include an external capacitor overlying the readout integrated circuit substrate. The external capacitor may be coupled with the internally integrated capacitor of the readout integrated... Agent: Drs Rsta, Inc.

20150035105 - Image pickup element, imaging apparatus, manufacturing apparatus for image pickup element, and manufacturing method for image pickup element: Provided is an image pickup element, including: condenser lenses made of a resin containing fine metal particles; photoelectric conversion elements formed in a silicon substrate and each configured to photoelectrically convert incident light that enter from an outside through corresponding one of the condenser lenses; and a protective film made... Agent:

20150035102 - Method of manufacturing solid-state imaging device and solid-state imaging device: According to one embodiment, the method of manufacturing a solid-state imaging device includes: forming a plurality of photoelectric conversion elements by two-dimensionally arranging semiconductor areas of a second conductivity type at a semiconductor layer of a first conductivity type in a matrix pattern; forming the photoelectric conversion elements in a... Agent: Kabushiki Kaisha Toshiba

20150035103 - Solid state imaging device: According to one embodiment, a solid state imaging device includes a semiconductor substrate comprising a first surface and a second surface opposite the first surface; a circuit at a side of the first surface of the semiconductor substrate; a pixel in the semiconductor substrate and converting light from a side... Agent: Kabushiki Kaisha Toshiba

20150035100 - Solid state imaging device and method of manufacturing solid state imaging device: A solid state imaging device includes a semiconductor layer, and a light shielding portion. The semiconductor layer has multiple photoelectric conversion elements. The light shielding portion is provided in the semiconductor layer, and has a light shielding member whose interface with the semiconductor layer is covered by an insulating film.... Agent: Kabushiki Kaisha Toshiba

20150035104 - Solid-state imaging apparatus, method of manufacturing the same, and electronic apparatus: A solid-state imaging apparatus includes an imaging region in which pixels are arranged, a connection region that surrounds the imaging region and includes an electrode pad, and an in-layer lens that is formed in the imaging region for each of the pixels. The in-layer lens is formed of a coating-type... Agent:

20150035101 - Solid-state imaging device and method for manufacturing the solid-state imaging device: According to one embodiment, a solid-state imaging device is provided. The solid-state imaging device includes a photoelectric conversion element, a first anti-reflection film, an intermediate film, and a second anti-reflection film. The photoelectric conversion element is disposed corresponding to each of a plurality of colored lights. The first anti-reflection film... Agent: Kabushiki Kaisha Toshiba

20150035110 - Pyroelectric aluminum nitride mems infrared sensor with selective wavelength infrared absorber: A MEMS sensor for detecting electromagnetic waves in a particular frequency range is provided. In a preferred embodiment, the MEMS sensor comprises a bottom substrate layer; a first electrode layer over the substrate layer; a pyroelectric layer over the first electrode layer; and a second electrode layer over the pyroelectric... Agent: The Regents Of The University Of California

20150035109 - Semiconductor device, manufacturing method of semiconductor device, semiconductor wafer, and electronic equipment: A semiconductor device includes a semiconductor substrate, a wiring layer that is formed on the semiconductor substrate, and a drive circuit that is provided in a circuit forming region of the semiconductor substrate. Then, the semiconductor device 110 is configured to include a pad electrode 103 that is electrically connected... Agent:

20150035111 - Semiconductor device: A semiconductor device includes first and second electrodes. First semiconductor regions of a first conductivity type are positioned between the first electrode and the second electrode and contact the first electrode. These semiconductor regions are arranged along a first direction. A second semiconductor region of the first conductivity type also... Agent: Kabushiki Kaisha Toshiba

20150035112 - Segmented guard ring structures with electrically insulated gap structures and design structures thereof: Disclosed are guard ring structures with an electrically insulated gap in a substrate to reduce or eliminate device coupling of integrated circuit chips, methods of manufacture and design structures. The method includes forming a guard ring structure comprising a plurality of metal layers within dielectric layers. The method further includes... Agent:

20150035113 - Epitaxial structures and methods of forming the same: An embodiment is a method. A first III-V compound semiconductor is epitaxially grown in a trench on a substrate, and the epitaxial growth is performed in a chamber. The first III-V compound semiconductor has a first surface comprising a facet. After the epitaxial growth, the first surface of the first... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20150035114 - Integrated circuit device: An integrated circuit device includes a semiconductor substrate, an active element and a passive element. The active element is made of the semiconductor substrate. The passive element includes a functional element filled in a groove or hole provided in the semiconductor substrate along a thickness direction thereof and is electrically... Agent: Napra Co., Ltd.

20150035115 - Modified via bottom for beol via efuse: An electronic fuse structure including an Mx level including a first Mx metal, a second Mx metal, and an Mx cap dielectric above of the first and second Mx metal, an Mx+1 level above the Mx level, the Mx+1 level including an Mx+1 metal and a via electrically connecting the... Agent:

20150035116 - Semiconductor device with circuits connected to each other in contactless manner: In a semiconductor device, a first semiconductor chip includes a first circuit and a first inductor, and a second semiconductor chip includes a second circuit and chip-side connecting terminals. An interconnect substrate is placed over the first semiconductor chip and the second semiconductor chip. The interconnect substrate includes a second... Agent: Renesas Electronics Corporation

20150035117 - Method for reducing lateral extrusion formed in semiconductor structures and semiconductor structures formed thereof: Aspects of the present invention relate to method for reducing lateral extrusion formed in semiconductor structures and semiconductor structures formed thereof. Various embodiments include a method for reducing lateral extrusion formed in semiconductor structures. The method can include removing a portion of a first lateral extrusion in an aluminum layer... Agent: International Business Machines Corporation

20150035118 - Semiconductor device including an electrode lower layer and an electrode upper layer and method of manufacturing semiconductor device: The semiconductor device according to the present invention includes a ferroelectric film and an electrode stacked on the ferroelectric film. The electrode has a multilayer structure of an electrode lower layer in contact with the ferroelectric film and an electrode upper layer stacked on the electrode lower layer. The electrode... Agent: Rohm Co., Ltd.

20150035119 - Capacitors and methods with praseodymium oxide insulators: Methods of forming and the resulting capacitors formed by these methods are shown. Monolayers that contain praseodymium are deposited onto a substrate and subsequently processed to form praseodymium oxide dielectrics. Monolayers that contain titanium or other metals are deposited onto a substrate and subsequently processed to form metal electrodes. Resulting... Agent:

20150035120 - Wafer scale package for high power devices: A semiconductor device package is formed of DBC in which thinned MOSgated and/or diode die are soldered to the bottom of an etched depression in the upper conductive layer. A via in the insulation layer of the DBC is filled with a conductive material to form a resistive shunt. Plural... Agent:

20150035121 - Bipolar transistor, semiconductor device, and bipolar transistor manufacturing method: Disconnection of a base line is suppressed even when a short-side direction of a collector layer is parallel to crystal orientation [011]. A bipolar transistor includes: a collector layer that has a long-side direction and a short-side direction in a plan view, in which the short-side direction is parallel to... Agent:

20150035122 - Micro-electro-mechanical system (mems) structures and design structures: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming at least one fixed electrode on a substrate. The method further includes forming a Micro-Electro-Mechanical System (MEMS) beam with a varying width dimension, as viewed from a top of the MEMS beam, over the... Agent:

20150035123 - Curvature compensated substrate and method of forming same: A curvature-control-material (CCM) is formed on one side of a substrate prior to forming a Group III nitride material on the other side of the substrate. The CCM possess a thermal expansion coefficient (TEC) that is lower than the TEC of the substrate and is stable at elevated growth temperatures... Agent: International Business Machines Corporation

20150035124 - Process for improving critical dimension uniformity of integrated circuit arrays: Methods for patterning integrated circuit (IC) device arrays employing an additional mask process for improving center-to-edge CD uniformity are disclosed. In one embodiment, a repeating pattern of features is formed in a masking layer over a first region of a substrate. Then, a blocking mask is applied over the features... Agent:

20150035125 - Semiconductor device, semiconductor wafer and manufacturing method of semiconductor device: A semiconductor device includes wiring layers formed over a semiconductor wafer, a via-layer between the wiring layers, conductive films in the wiring layers, and a via-plug in the via-layer connecting the conductive films of the wiring layers above and below, a scribe region at an outer periphery of a chip... Agent:

20150035126 - Methods and structures for processing semiconductor devices: Methods of forming a semiconductor structure include exposing a carrier substrate to a silane material to form a coating, removing a portion of the coating at least adjacent a periphery of the carrier substrate, adhesively bonding another substrate to the carrier substrate, and separating the another substrate from the carrier... Agent: Micron Technology, Inc.

20150035127 - Semiconductor package and method of fabricating the same: The present disclosure relates to a semiconductor package and a method of fabricating the same. The semiconductor package includes a substrate, a grounding layer, a chip, a package body, and a shielding layer. The substrate includes a lateral surface and a bottom surface. The grounding layer is buried in the... Agent:

20150035128 - Semiconductor device and method of manufacturing semiconductor device: According to one embodiment, a semiconductor device includes a metal holder, a semiconductor chip on the holder, and a reinforcing portion. The reinforcing portion is formed by bending a portion of the holder, the reinforcing portion includes a groove depressed from a surface of the holder and a protrusion on... Agent: Kabushiki Kaisha Toshiba

20150035129 - Stacked multi - chip packaging structure and manufacturing method thereof: A stacked multi-chip packaging structure comprises a lead frame, a first semiconductor chip mounted on the lead frame, a second semiconductor chip flipped-chip mounted on the lead frame, a metal clip mounted on top of the first and second semiconductor chips and a third semiconductor chip stacked on the meal... Agent:

20150035130 - Integrated circuit with stress isolation: A packaged semiconductor device has a semiconductor substrate with circuitry formed thereon. A shield plate is mounted over a designated region of the substrate and separated from the semiconductor substrate by a separator, such that the shield plate is separated from the designated region of the substrate by a distance.... Agent: Texas Instruments Incorporated

20150035131 - Chip package: According to an embodiment of the present invention, a chip package is provided. The chip package includes a substrate. A chip is disposed on the substrate. A stiffener is disposed on the substrate. The thermal conductivity of the stiffener is higher than the thermal conductivity of the substrate.... Agent: Media Tek Singapore Pte. Ltd.

20150035132 - Method for manufacturing semiconductor device and semiconductor device: In a method for manufacturing a semiconductor device according to the present invention, as shown in FIG. 2(A), a case (2) including a first terminal (1) is placed on a working table (3) with an opening (30) formed at the bottom of the case (2). Subsequently, as shown in FIG.... Agent:

20150035133 - Electronic modules and methods of making electronic modules: A method is described for making electronic modules includes molding onto a substrate panel a matrix panel defining a plurality of cavities, attaching semiconductor die to the substrate panel in respective cavities of the molded matrix panel, electrically connecting the semiconductor die to the substrate panel, affixing a cover to... Agent: Stmicroelectronics Pte Ltd.

20150035134 - 3dic packages with heat dissipation structures: A package includes a first die and a second die underlying the first die and in a same first die stack as the first die. The second die includes a first portion overlapped by the first die, and a second portion not overlapped by the first die. A first Thermal... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20150035135 - 3dic packages with heat sinks attached to heat dissipating rings: A package includes a first die and a second die underlying the first die and in a same first die stack as the first die. The second die includes a first portion overlapped by the first die, and a second portion extending beyond edges of the first die. A first... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20150035138 - Semiconductor device: A circuit pattern is bonded to a top surface of a ceramic substrate. A cooling body is bonded to an undersurface of the ceramic substrate. An IGBT and a FWD are provided on the circuit pattern. A coating film covers a junction between the ceramic substrate and the circuit pattern,... Agent: Mitsubishi Electric Corporation

20150035136 - Semiconductor device to be attached to heat radiation member: A semiconductor device includes a semiconductor module and a pressing member pressing the semiconductor module to a heat radiation member. The semiconductor module includes heat generation elements generating heat by energization, three or more conductive members each of which mounted with at least one of the heat generation elements, and... Agent:

20150035137 - Solder joint structure, power module, power module substrate with heat sink and method of manufacturing the same, and paste for forming solder base layer: There are provided a solder joint structure, a power module using the joint structure, a power module substrate with a heat sink and a method of manufacturing the same, as well as a solder base layer forming paste which is disposed and fired on a metal member to thereby react... Agent:

20150035143 - Chip package and fabrication method thereof: A chip package is disclosed. The package includes a semiconductor chip having a first surface and a second surface opposite thereto, at least one conductive pad adjacent to the first surface, and an opening extending toward the first surface from the second surface to expose the conductive pad. The caliber... Agent:

20150035139 - Copper post structure for wafer level chip scale package: In a method for forming a packaging structure, a metal pad is formed on a semiconductor substrate, and a first polymer insulating layer is formed over the semiconductor substrate. An opening passing through the first polymer insulating layer is formed to expose a portion of the metal pad. A copper-containing... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20150035144 - High density interconnect device and method: Embodiments that allow both high density and low density interconnection between microelectronic die and motherboard via Direct Chip Attach (DCA) are described. In some embodiments, microelectronic die have a high density interconnect with a small bump pitch located along one edge and a lower density connection region with a larger... Agent:

20150035145 - Millimeter wave wafer level chip scale packaging (wlcsp) device: Various embodiments include wafer level chip scale package (WLCSP) structures and methods of tuning such structures. In some embodiments, the WLCSP structure includes: a printed circuit board (PCB) trace connection including at least one PCB ground connection connected with a PCB ground plane; a set of ground solder balls each... Agent:

20150035142 - Multi-chip package: A multi-chip package may include a package substrate, a connecting substrate, a plurality of semiconductor chips and a logic chip. The package substrate may have an opening. The connecting substrate may be arranged on an upper surface of the package substrate. The semiconductor chips may be stacked on an upper... Agent:

20150035141 - Semiconductor package structure for improving die warpage and manufacturing method thereof: A semiconductor die package includes a semiconductor die, a film for improving die warpage bonded to a first face of the semiconductor die, a plurality of electrically conductive bumps formed on a second face of the semiconductor die, a substrate onto which the electrically conductive bumps of the second face... Agent:

20150035140 - Wafer support system for 3d packaging: A method for handling and supporting a device wafer during a wafer thinning process and the resulting device are provided. Embodiments include forming a plurality of solder bumps on a first surface of a substrate having a first and a second surface; removing a portion from a periphery of the... Agent: Global Foundries Inc.

20150035147 - Fine pitch stud pop structure and method: A fine pitch stud POP structure and method is disclosed. The studs are made in bonding pads on the top surface of a lower substrate, which greatly increase the height of the interconnection such as solder balls. In addition, the lower substrate and the upper substrate are connected by reflowing... Agent:

20150035148 - Semiconductor packages and methods of fabricating the same: A semiconductor package including a lower package including a lower package substrate and a lower semiconductor chip, the lower package substrate including an interconnection part and a core part, the core part including connection vias exposed by openings, the lower semiconductor chip buried in the core part, an upper package... Agent:

20150035146 - Through package via (tpv): A through package vias (TPV), a package including a plurality of the TPVs, and a method of forming the through package via are provided. Embodiments of a through package via (TPV) for a package include a build-up film layer, a metal pad disposed over the build-up film layer, a polymer... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20150035149 - Semiconductor device and manufacturing method thereof: According to one embodiment, a semiconductor device includes a semiconductor substrate provided with a lower interconnect layer formed thereon, and having a device region and a mark formation region, a CNT via structure formed in the device region such that it contacts the lower interconnect layer, a first mark formed... Agent: Kabushiki Kaisha Toshiba

20150035150 - Conductive interconnect structures incorporating negative thermal expansion materials and associated systems, devices, and methods: Semiconductor devices having interconnects incorporating negative expansion (NTE) materials are disclosed herein. In one embodiment a semiconductor device includes a substrate having an opening that extends at least partially through the substrate. A conductive material having a positive coefficient of thermal expansion (CTE) partially fills the opening. A negative thermal... Agent: Micron Technology, Inc.

20150035151 - Capping layer interface interruption for stress migration mitigation: A semiconductor device includes a substrate, a dielectric layer supported by the substrate, an interconnect adjacent the dielectric layer, the interconnect including a conduction material and a barrier material disposed along sidewalls of the interconnect between the conduction material and the dielectric layer, and a layer disposed over the interconnect... Agent: Freescale Semiconductor, Inc.

20150035155 - Dual damascene structure with liner: A dual damascene structure with an embedded liner and methods of manufacture are disclosed. The method includes forming a dual damascene structure in a substrate. The method further includes reflowing a seed layer such that material of the seed layer flows into a via of the dual damascene structure. The... Agent:

20150035152 - Interconnection structures for semiconductor devices and fabrication methods of forming interconnection structures for semiconductor devices utilizing to-be-etched layer made of porous low-k dielectric material and a first hard mask layer made of nitrogen: A method is provided for fabricating a semiconductor structure. The method includes providing a substrate; and forming a to-be-etched layer made of porous low dielectric constant material on one surface of the semiconductor substrate. The method also includes forming a first hard mask layer made of nitrogen-doped silicon oxycarbide (SiOC(N))... Agent: Semiconductor Manufacturing International ( Shanghai) Corporation

20150035154 - Profile control in interconnect structures: The profile of a via can be controlled by forming a profile control liner within each via opening that is formed into a dielectric material prior to forming a line opening within the dielectric material. The presence of the profile control liner within each via opening during the formation of... Agent:

20150035153 - Removing metal fills in a wiring layer: The present invention relates to a semiconductor manufacturing method, a mask forming method and a semiconductor structure. According to one aspect of the invention, a semiconductor manufacturing method is provided, comprising: forming a metal wiring layer on a semiconductor substrate, the metal wiring layer comprising dielectrics and metal wires and... Agent:

20150035156 - Semiconductor device and manufacturing method thereof, and mounting method of semiconductor device: Disclosed is a semiconductor device whose reliability can be improved. The semiconductor device includes: first wiring formed over a semiconductor substrate via a first insulating film; a second insulating film that includes an inorganic film covering the first wiring and that has a flat surface on which CMP processing has... Agent: Renesas Electronics Corporation

20150035157 - Spacer for enhancing via pattern overlay tolerence: After formation of line openings in a hard mask layer, hard mask level spacers are formed on sidewalls of the hard mask layer. A photoresist is applied and patterned to form a via pattern including a via opening. The overlay tolerance for printing the via pattern is increased by the... Agent:

20150035158 - Semiconductor devices with enhanced electromigration performance: Semiconductor devices with enhanced electromigration performance and methods of manufacture are disclosed. The method includes forming at least one metal line in electrical contact with a device. The method further includes forming at least one staple structure in electrical contact with the at least one metal line. The at least... Agent:

20150035159 - Semiconductor device having backside interconnect structure on through substrate via and method of forming the same: A semiconductor device includes a through-substrate via extending from a frontside to a backside of a semiconductor substrate. The through-substrate via includes a concave or a convex portion adjacent to the backside of the semiconductor substrate. An isolation film is formed on the backside of the semiconductor substrate. A conductive... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20150035160 - Pad configurations for an electronic package assembly: Embodiments of the present disclosure provide an electronic package assembly comprising a solder mask layer, the solder mask layer having at least one opening, and a plurality of pads coupled to the solder mask layer, wherein at least one pad of the plurality of pads includes (i) a first side,... Agent:

20150035162 - Inductive device that includes conductive via and metal layer: An inductive device that includes a conductive via and a metal layer are disclosed. A particular method of forming an electronic device includes forming a metal layer that contacts a surface of a substrate. The substrate, including the surface, is formed from a substantially uniform dielectric material. The metal layer... Agent: Qualcomm Incorporated

20150035165 - Interconnection structure of semiconductor device: An interconnection structure of a semiconductor device is provided, where the interconnection structure is constructed in a semiconductor substrate. The interconnection structure includes a first through silicon via and a second through silicon via both penetrating the semiconductor substrate, and the first through silicon via is spaced from the second... Agent: National Chiao Tung University

20150035166 - Method for manufacturing a semiconductor component and structure: A semiconductor component having wettable leadframe lead surfaces and a method of manufacture. A leadframe having leadframe leads is embedded in a mold compound. The mold compound is separated to form singulated semiconductor components. A portion of at least one leadframe lead is exposed and an electrically conductive material is... Agent:

20150035161 - Semiconductor device and manufacturing method thereof: A singulated semiconductor structure comprises a molding compound; a first conductive post in the molding compound having a first geometric shape in a top view; a second conductive post or an alignment mark in the molding compound having a second geometric shape in a top view, wherein the second geometric... Agent: Taiwan Semiconductor Manufacturing Company Ltd.

20150035168 - Semiconductor device having through-substrate vias: A semiconductor device having through-substrate vias is disclosed. In one aspect, the device includes a substrate having at least one front-end-of-line (FEOL) device and a back-end-of-line (BEOL) comprising a metal pad. The device additionally includes at least one first contact plug contacting the at least one FEOL device and at... Agent:

20150035163 - Semiconductor package and method of fabricating the same: The present invention provides a semiconductor package and a method of fabricating the same, including: placing a semiconductor element in a groove of a carrier; forming a dielectric layer on the semiconductor element; forming on the dielectric layer a circuit layer electrically connected to the semiconductor element; and removing a... Agent: Siliconware Precision Industries Co., Ltd.

20150035164 - Semiconductor package and method of fabricating the same: The present invention provides a semiconductor package and a method of fabricating the same, including: placing in a groove of a carrier a semiconductor element having opposing active and non-active surfaces, and side surfaces abutting the active surface and the non-active surface; applying an adhesive material in the groove and... Agent: Siliconware Precision Industries Co., Ltd.

20150035167 - Tft array substrate and manufacturing method thereof, and display device: The present invention provides a TFT array substrate, the TFT array substrate includes: a first metal layer including a first common electrode line, a second metal layer including a second common electrode line, and a third common electrode line, wherein the third common electrode line is electrically connected with at... Agent: Shanghai Avic Optoelectronics Co., Ltd.

20150035169 - Via structure for three-dimensional circuit integration: Circuits incorporating three-dimensional integration and methods of their fabrication are disclosed. One circuit includes a bottom layer and a plurality of upper layers. The bottom layer includes a bottom landing pad connected to functional components in the bottom layer. In addition, the upper layers are stacked above the bottom layer.... Agent:

20150035170 - Multichip device including a substrate: A device includes a substrate including an electrically insulating core, a first electrically conductive material arranged over a first main surface of the substrate, and a second electrically conductive material arranged over a second main surface of the substrate opposite to the first main surface. The device further includes an... Agent: Infineon Technologies Ag

20150035171 - Segmented bond pads and methods of fabrication thereof: In accordance with an embodiment of the present invention, a semiconductor device includes a first bond pad disposed at a first side of a substrate. The first bond pad includes a first plurality of pad segments. At least one pad segment of the first plurality of pad segments is electrically... Agent:

20150035172 - Semiconductor device and method of manufacturing the same: To enhance the reliability of a semiconductor device. The semiconductor device includes a wiring substrate having a plurality of bonding fingers (terminal) formed on a chip-mounting surface, a semiconductor chip mounted on the wiring substrate, a plurality of wires having a ball part and a stitch part respectively. The bonding... Agent:

20150035173 - Adhesives for bonding handler wafers to device wafers and enabling mid-wavelength infrared laser ablation release: Methods are provided to form adhesive materials that are used to temporarily bond handler wafers to device wafers, and which enable mid-wavelength infrared laser ablation release techniques to release handler wafers from device wafers.... Agent: International Business Machines Corporation

20150035174 - Semiconductor device: According to one embodiment, a semiconductor device includes a first component that generates heat when used, a second component, and a sealing portion. The sealing portion includes a first region and a second region. The first region covers the first component. The second region is thermally divided from the first... Agent: Kabushiki Kaisha Toshiba

20150035175 - Adhesive for semiconductor, fluxing agent, manufacturing method for semiconductor device, and semiconductor device: c

  
  
  
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