Active solid-state devices (e.g., transistors, solid-state diodes) patents - Monitor Patents
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Active solid-state devices (e.g., transistors, solid-state diodes)

Below are recently published patent applications awaiting approval from the USPTO. Recent week's RSS XML file available below.
Listing for abstract view: USPTO application #, Title, Abstract excerpt,Patent Agent. Listing format for list view: USPTO National Class full category number, title of the patent application.
  
05/21/2015 > 333 patent applications in 118 patent subcategories.

20150137061 - Cross-point memory and methods for fabrication of same: A method of fabricating a memory device is disclosed. In one aspect, the method comprises patterning a first conductive line extending in a first direction. The method additionally includes forming a free-standing pillar of a memory cell stack on the first conductive line after patterning the first conductive line. Forming... Agent: Micron Technology, Inc.

20150137060 - High rectifying ratio diode: Devices and methods for forming a device are disclosed. The device includes a substrate and a selector diode disposed over the substrate. The diode includes first and second terminals. The first terminal is disposed between the second terminal and the substrate. The diode includes a Schottky Barrier (SB) disposed at... Agent: Globalfoundries Singapore Pte. Ltd.

20150137065 - Memory cells and methods of forming memory cells: Some embodiments include memory cells which contain, in order; a first electrode material, a first metal oxide material, a second metal oxide material, and a second electrode material. The first metal oxide material has at least two regions which differ in oxygen concentration relative to one another. One of the... Agent:

20150137062 - Mimcaps with quantum wells as selector elements for crossbar memory arrays: Selector devices suitable for memory arrays have low leakage currents at low voltages, reducing sneak current paths for non-selected devices, and high leakage currents at high voltages, reducing voltage drops during switching. The selector device may include a non-conductive tri-layer between two electrodes. The non-conductive tri-layer may include a low-bandgap... Agent:

20150137064 - Reduction of forming voltage in semiconductor devices: This disclosure provides a nonvolatile memory device and related methods of manufacture and operation. The device may include one or more resistive random access memory (ReRAM) approaches to provide a memory device with more predictable operation. In particular, the forming voltage required by particular designs may be reduced through the... Agent:

20150137059 - Resistive random access memory (rram) with improved forming voltage characteristics and method for making: The present disclosure provides resistive random access memory (RRAM) structures and methods of making the same. The RRAM structures include a bottom electrode having protruded step portion that allows formation of a self-aligned conductive path with a top electrode during operation. The protruded step portion may have an inclination angle... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20150137063 - Resistive switching in memory cells: Methods, devices, and systems associated with oxide based memory can include a method of forming a resistive switching region of a memory cell. Forming a resistive switching region of a memory cell can include forming a metal oxide material on an electrode and forming a metal material on the metal... Agent:

20150137066 - Electronic device: An electronic device includes a memory. The memory includes a first cell array including a plurality of flash memory cells, a first peripheral circuit suitable for controlling the first cell array, a second cell array including a plurality of variable resistance memory cells, and a second peripheral circuit suitable for... Agent: Sk Hynix Inc.

20150137068 - Junctionless nano-electro-mechanical resonant transistor: A junctionless Nano-Electro-Mechanical (NEM) resonator, comprising a highly doped conductive channel connecting a drain region and a source region; the conduction channel region is movable and the overall structure is fixed at least at these two ends placed on acting the source and drain regions, respectively; at least one fixed... Agent: Ecole Polytechnique Federale De Lausanne (epfl)

20150137069 - Nanogap device with capped nanowire structures: An anti-retraction capping material is formed on a surface of a nanowire that is located upon a dielectric membrane. A gap is then formed into the anti-retraction capping material and nanowire forming first and second capped nanowire structures of a nanodevice. The nanodevice can be used for recognition tunneling measurements... Agent:

20150137067 - Nanowire mosfet with different silicides on source and drain: A nanowire field effect transistor (FET) device and method for forming a nanowire FET device are provided. A nanowire FET including a source region and a drain region is formed. The nanowire FET further includes a nanowire that connects the source region and the drain region. A source silicide is... Agent: Taiwan Semiconductor Manufacturing Company Limited

20150137071 - Nitride semiconductor light emitting device and fabrication method thereof: Provided is a nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed above the first nitride semiconductor layer; and a delta doped second nitride semiconductor layer formed above the active layer. According to the present invention, the optical power of the nitride semiconductor light... Agent:

20150137070 - Semiconductor light emitting device and method of manufacturing the same: Provided are a semiconductor light emitting device. The semiconductor light emitting device comprises a first semiconductor layer; a second semiconductor layer disposed on the first semiconductor layer; an active layer disposed between the first semiconductor layer and the second semiconductor layer; third semiconductor layer disposed on the second semiconductor layer;... Agent: Lg Innotek Co., Ltd.

20150137072 - Mask for forming semiconductor layer, semiconductor device, and method of fabricating the same: A mask for forming a semiconductor layer and a semiconductor device manufactured using the same. The mask for forming a semiconductor layer includes oblique openings. Since a semiconductor layer is formed through one or more openings, it is possible to suppress generation of threading dislocation in a vertical direction from... Agent:

20150137073 - Nanowire devices: A method of forming nanowire devices. The method includes forming a stressor layer circumferentially surrounding a semiconductor nanowire. The method is performed such that, due to the stressor layer, the nanowire is subjected to at least one of radial and longitudinal strain to enhance carrier mobility in the nanowire. Radial... Agent:

20150137074 - Graphene device including separated junction contacts and method of manufacturing the same: A graphene device including separated junction contacts and a method of manufacturing the same are disclosed. The graphene device is a field effect transistor (FET) in which graphene is used as a channel. A source electrode and a drain electrode do not directly contact the graphene channel, and junction contacts... Agent:

20150137077 - Graphene electronic device: A graphene electronic device includes a substrate, a first electrode and a second electrode provided on the substrate and spaced apart from each other, and graphene channels connecting the first electrode with the second electrode. Each of the graphene channels is separated from the substrate to have a cylindrical structure.... Agent: Electronics And Telecommunications Research Institute

20150137078 - Graphene sensor: A method for forming a sensor includes forming a channel in substrate, forming a sacrificial layer in the channel, forming a sensor having a first dielectric layer disposed on the substrate, a graphene layer disposed on the first dielectric layer, and a second dielectric layer disposed on the graphene layer,... Agent:

20150137075 - Inverter including two-dimensional material, method of manufacturing the same and logic device including inverter: Inverters including two-dimensional (2D) material, methods of manufacturing the same, and logic devices including the inverters. An inverter may include a first transistor and a second transistor that are connected to each other, and the first and second transistor layers may include 2D materials. The first transistor may include a... Agent: Samsung Electronics Co., Ltd.

20150137076 - Semiconductor device and method of manufacturing the same: A semiconductor device including a graphene layer and a method of manufacturing the same are disclosed. A method in which graphene is grown on a catalyst metal by a chemical vapor deposition or the like is known. However, the graphene cannot be used as a channel, since the graphene is... Agent: Fujitsu Limited

20150137079 - Vertical tunnel field effect transistor (fet): Among other things, one or more techniques for forming a vertical tunnel field effect transistor (FET), and a resulting vertical tunnel FET are provided herein. In an embodiment, the vertical tunnel FET is formed by forming a core over a first type substrate region, forming a second type channel shell... Agent:

20150137111 - Compound for organic optoelectronic device, organic light-emitting device containing the same, and display device including said organic light-emitting device: A compound for an organic optoelectronic device, an organic light-emitting device including the same and a display device including the organic light-emitting device are provided, and the compound for an organic optoelectronic device represented by a combination of the following Chemical Formulae 1 and 2 is provided and thus an... Agent:

20150137083 - Conjugated aromatic derivatives and organic light emitting diode using the same: Conjugated aromatic derivatives having an electron donating group and an electron accepting group at each end are provided. The conjugated aromatic derivatives of the present invention may be provided with blue light-emitting property and may be applied as a host material, a dopant material, an electron transporting material or a... Agent: National Tsing Hua University

20150137098 - Display device and method for manufacturing the same: A display device according to the present disclosure includes: a first substrate including a front surface and a rear surface, the front surface defining thereon a first region, a second region, and a third region, the rear surface defining thereon a fourth region, a fifth region, and a sixth region... Agent:

20150137108 - Functional film and organic el device: A functional film of the present invention includes a support body of which a retardation value is less than or equal to 300 nm; a protective inorganic layer which is formed on the support body; one or more combinations of an inorganic layer and an organic layer which are formed... Agent: Fujifilm Corporation

20150137094 - Material for organic electroluminescence device and organic electroluminescence device using the same: A material for an organic electroluminescence (EL) device and an organic electroluminescence (EL) device, the material being represented by Formula 1:... Agent:

20150137106 - Method for manufacturing a display unit: A method for manufacturing a display unit is provided, and the method includes forming a first insulating film, forming a plurality of first electrodes on the first insulating film, forming a second insulating film on the first electrodes, forming a plurality of openings corresponding to the first electrodes, forming a... Agent:

20150137107 - Method of fabricating a display device with step configuration in the insulating layer: A display device includes: a substrate; a plurality of light-emission elements arranged, on the substrate, in a first direction and a second direction intersecting each other, each of the light-emission elements having a first electrode layer, an organic layer including a luminous layer, and a second electrode layer which are... Agent: Sony Corporation

20150137085 - Organic el device and method for manufacturing organic el device: Provided is an organic EL device having high reliability, wherein decrease of the luminance due to the generation of a gas such as water vapor is suppressed. This organic EL device is provided with: an interlayer insulating film that is formed on a substrate; a lower electrode that is formed... Agent: Sharp Kabushiki Kaisha

20150137104 - Organic electroluminescence device and method of manufacturing the same: Provided are an organic electroluminescence device capable of enhancing reflectance of an anode, thereby resulting in improved light-emitting efficiency and a method of manufacturing the same. An anode (12), a thin film layer for hole injection (13), an insulating layer (14), an organic layer (15) including a luminescent layer (15C)... Agent:

20150137103 - Organic electroluminescence element: A light emitting device including an organic electroluminescence element is provided. The light emitting device may be a display device or a lighting device. The organic electroluminescence element includes an anode, a light emitting layer, and a cathode that are arranged in this order. An electron injection layer is arranged... Agent: Asahi Glass Company, Limited

20150137086 - Organic electroluminescence unit, method of manufacturing the same, and electronic apparatus: An organic electroluminescence unit of the present disclosure includes: a plurality of light emitting devices arranged having a pitch from 10 micrometers to 60 micrometers both inclusive, and each including a first electrode, an organic layer, and a second electrode that are laminated in order from a substrate, the organic... Agent:

20150137100 - Organic electroluminescent device: An organic electroluminescence device of the present invention adapts a new concept in its configuration to improve its efficiency in addition to obtain a high reliability and good yielding. The organic electroluminescent device having an electroluminescent film containing an organic material capable of causing an electroluminescence and being arranged between... Agent: Semiconductor Energy Laboratory Co., Ltd.

20150137080 - Organic electroluminescent materials and devices: a tetradentate ligand coordinated to an iridium core by coordinating atoms XI, X2, X3 and X4; a first monodentate ligand coordinated to the iridium core by coordinating atom Y1; and a second monodentate ligand coordinated to the iridium core by coordinating atom Y2, wherein X1, X2, X3 and X4 are... Agent: Universal Display Corporation

20150137095 - Organic electroluminescent materials and devices: Formula I, is described. In formula Ir(LA)n(LB)3−n, n is either 1 or 2; R1, R2, R4, and R5 each independently represent up to the maximum number of substitutions or no substitutions; X1, X2, X3, and X4 are each independently C or N; and at least one of X1, X2, X3,... Agent: Universal Display Corporation

20150137096 - Organic electroluminescent materials and devices: is described. In the structure of Formula I, A1 through A8 are independently carbon or nitrogen, with at least one being nitrogen; X1 is selected from the group consisting of O, S, and Se; X2 and X3 are independently selected from the group consisting of C, N, O, P, and... Agent: Universal Display Corporation

20150137105 - Organic light emitting diode display and method for manufacturing the same: An organic light emitting diode display includes a substrate; a first capacitor electrode provided over the substrate and including polysilicon; an insulating layer provided over the first capacitor electrode; and a second capacitor electrode provided over the insulating layer and including a first lower metal layer overlapping with the first... Agent:

20150137093 - Organic light emitting display device: An organic light emitting display device comprises a substrate that includes a plurality of pixel regions; a conductive line arranged on the substrate; and an anti-reflective layer arranged on the conductive line, wherein the anti-reflective layer includes an intermediate layer arranged on the conductive line and a semi-transparent layer arranged... Agent:

20150137099 - Organic light emitting display device: An organic light emitting display device comprises a driving transistor for driving an organic light emitting diode; a first transistor controlled by a scan signal and connected between a reference voltage line and a first node of the driving transistor; a second transistor controlled by the scan signal and connected... Agent:

20150137101 - Organic light emitting display device: An organic light emitting display device includes a scan line, a data line, a power supply line, and a pixel. The scan line extends in one direction. The data line crosses the scan line. The power supply line crosses the scan line and the data line. The pixel is electrically... Agent:

20150137087 - Organic light emitting element, organic el display panel, organic el display device, coated device, and method for manufacturing these: An organic light-emitting element including: a substrate; a light-emitting part above the substrate, the light-emitting part including an organic layer; and banks defining bounds of the organic layer in a direction along a main surface of the substrate. In the organic light-emitting element, in plan view, a surface of the... Agent: Panasonic Corporation

20150137090 - Organic light-emitting diode (oled) display and method of manufacturing the same: An organic light-emitting diode (OLED) display and method of manufacturing the same are disclosed. In one aspect, the OLED display includes a substrate, a thin film transistor (TFT) formed over the substrate, and a first pixel defining layer formed over the TFT and having an opening. The OLED display also... Agent:

20150137097 - Organic light-emitting diode (oled) display and method of manufacturing the same: An organic light-emitting diode (OLED) display and a method of manufacturing the OLED display are disclosed. In one aspect, the OLED display includes a substrate including a display region and a peripheral region, a first auxiliary electrode formed in the peripheral region, and a protecting electrode. The protecting electrode can... Agent:

20150137091 - Organic light-emitting diode display device and method of manufacturing the same: An organic light-emitting diode display device includes a substrate, a light-absorption layer, an active array structure, and an organic light-emitting diode. The substrate has a first and a second surface opposite to each other. The light-absorption layer is disposed on the first surface, and has at least one opening exposing... Agent:

20150137081 - Organic light-emitting display apparatus: An organic light-emitting display apparatus, including a substrate including a first subpixel region, a second subpixel region, and a third subpixel region, a first pixel electrode, a second pixel electrode, and a third pixel electrode disposed respectively in the first subpixel region, the second subpixel region, and the third subpixel... Agent: Samsung Display Co., Ltd.

20150137082 - Organic light-emitting display apparatus: Provided is an organic light-emitting display apparatus, including a substrate, a first pixel electrode, a second pixel electrode, and a third pixel electrode, disposed on the substrate separated from one another, a red emission layer disposed corresponding to the first pixel electrode, a green emission layer disposed corresponding to the... Agent: Samsung Display Co., Ltd.

20150137102 - Organic light-emitting display device and method for manufacturing organic light-emitting display device: Provided are an organic light-emitting display device and a method for manufacturing the same. A flexible substrate of the organic light-emitting display device is bent across a bend line and includes a first area, a first bending area adjacent to the first area, a second bending adjacent to the first... Agent:

20150137088 - Radiation detector with an organic photodiode: The present invention relates to a radiation detector with organic photodiodes and to a method of producing such a radiation detector. The TFT backplane (103, 104) is placed between the scintillator (101) and the organic photodiode layer stack (105, 106, 107, 108). This implies the use of transparent TFT-electronics, e.g.,... Agent: Koninklijke Philips N.v.

20150137089 - Sheet-like adhesive and organic el panel using the same: e

20150137109 - Substrate for organic electronic device: Provided are a substrate for an organic electronic device (OED), an organic electronic system, and a light. The substrate capable of forming an OED ensuring excellent performances and reliability because it may have excellent performances including light extraction efficiency, permeation of moisture or a gas from an external environment may... Agent:

20150137110 - Substrate for organic electronic device: The present application relates to a substrate for an organic electronic device, an organic electronic device, and a lighting device. In an embodiment of the present application, a substrate or an organic electronic device which may form an organic electronic device capable of ensuring performance including light extraction efficiency or... Agent:

20150137092 - Transistor structure and manufacturing method thereof: A transistor structure disposed on a substrate includes a gate electrode, an organic semiconductor layer, a gate insulation layer and a patterned metal layer. The gate insulation layer is disposed between the gate and the organic semiconductor layer. The patterned metal layer has a conductive oxidation surface and is divided... Agent:

20150137084 - Triptycene derivatives having symmetric or asymmetric substituents and organic light emitting diode using the same: Triptycene derivatives having symmetric or asymmetric substituents are provided. The triptycene derivatives of the present invention may be applied in phosphorescent lighting devices ranging from deep blue to red and may be applied as a host material, an electron transporting material or a hole transporting material. An OLED device is... Agent: National Tsing Hua University

20150137116 - Array substrate, method for manufacturing the same and display device: An array substrate includes a display area and a peripheral area adjacent to the display area; the display area includes a plurality of pixel units; each pixel unit includes a thin-film transistor (TFT) and a pixel electrode; and a drain electrode of the TFT directly contacts with the pixel electrode.... Agent:

20150137118 - Display device: To suppress fluctuation in the threshold voltage of a transistor, to reduce the number of connections of a display panel and a driver IC, to achieve reduction in power consumption of a display device, and to achieve increase in size and high definition of the display device. A gate electrode... Agent:

20150137117 - Display panel: A display panel includes a first substrate and a plurality of pixels disposed on the first substrate. At least one of the pixels includes a gate line region, an active layer, an etch stop layer, a first and second source/drain layer. The gate line region is disposed on the first... Agent:

20150137114 - Electronic device and method for manufacturing same: According to one embodiment of the present invention, an electronic device includes: a carbon layer including graphene, a thin film layer formed on the carbon layer, a channel layer formed on the thin film layer, a current cutoff layer formed between the thin film layer and the channel layer so... Agent: Snu R&db Foundation

20150137115 - Metal oxide thin film, method for manufacturing the same, and solution for metal oxide thin film: The present disclosure provides a solution for a metal oxide semiconductor thin film, including metal hydroxides dissolved in an aqueous or nonaqueous solvent and an acid/base titrant for controlling solubility of metal hydroxides. A solution is synthesized to improve stability and semiconductive performance of a device through addition of other... Agent: Industry-academic Cooperation Foundation, Yonsei University

20150137124 - Method for manufacturing semiconductor device: In a semiconductor device including a transistor in which an oxide semiconductor layer, a gate insulating layer, and a gate electrode layer on side surfaces of which sidewall insulating layers are provided are stacked in this order, a source electrode layer and a drain electrode layer are provided in contact... Agent:

20150137112 - Method for manufacturing thin-film transistor and thin-film transistor manufactured with same: The present invention provides a method for manufacturing a thin-film transistor and a thin-film transistor manufactured with same. The method includes (1) providing a substrate; (2) forming a first metal layer on the substrate and applying a masking operation to form a gate terminal; (3) forming a gate insulation layer... Agent: Shenzhen China Star Optoelectronics Technology Co., Ltd.

20150137121 - Method of manufacturing semiconductor device: A highly reliable transistor which includes an oxide semiconductor and has high field-effect mobility and in which a variation in threshold voltage is small is provided. By using the transistor, a high-performance semiconductor device, which has been difficult to realize, is provided. The transistor includes an oxide semiconductor film which... Agent:

20150137113 - Motft with un-patterned etch-stop: A method of fabricating a high mobility semiconductor metal oxide thin film transistor including the steps of depositing a layer of semiconductor metal oxide material, depositing a blanket layer of etch-stop material on the layer of MO material, and patterning a layer of source/drain metal on the blanket layer of... Agent:

20150137120 - Semiconductor device: Oxide layers which contain at least one metal element that is the same as that contained in an oxide semiconductor layer including a channel are formed in contact with the top surface and the bottom surface of the oxide semiconductor layer, whereby an interface state is not likely to be... Agent:

20150137122 - Semiconductor device: A semiconductor device in which release of oxygen from side surfaces of an oxide semiconductor film including c-axis aligned crystal parts can be prevented is provided. The semiconductor device includes a first oxide semiconductor film, a second oxide semiconductor film including c-axis aligned crystal parts, and an oxide film including... Agent:

20150137119 - Semiconductor device and method for manufacturing the same: It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer. The... Agent:

20150137123 - Semiconductor device and method for manufacturing the same: In the transistor including an oxide semiconductor film, which includes a film for capturing hydrogen from the oxide semiconductor film (a hydrogen capture film) and a film for diffusing hydrogen (a hydrogen permeable film), hydrogen is transferred from the oxide semiconductor film to the hydrogen capture film through the hydrogen... Agent:

20150137125 - Semiconductor device: A technique is provided that can prevent cracking of a protective film in the uppermost layer of a semiconductor device and improve the reliability of the semiconductor device. Bonding pads formed over a principal surface of a semiconductor chip are in a rectangular shape, and an opening is formed in... Agent: Renesas Electronics Corporation

20150137126 - Tft array substrate, manufacturing method of the same and display device: According to embodiments of the invention, a TFT array substrate, a manufacturing method of the TFT array substrate and a display device are provided. The method comprises: depositing a metal film on a substrate, and forming a gate electrode and a gate line; forming a gate insulating layer and a... Agent:

20150137127 - Display substrate and method of manufacturing the same: A display substrate includes a gate line disposed on a base substrate and extending in a direction. A data line crosses the gate line. A thin film transistor comprises a gate electrode, a semiconductor pattern, a source electrode, and a drain electrode. The thin film transistor is connected to the... Agent: Samsung Display Co., Ltd.

20150137128 - Thin-film transistor array substrate and method for repairing the same: The present disclosure disclosed a thin-film transistor array substrate and a method for repairing the same. The array substrate comprises: a substrate; a plurality of common lines, configured on the substrate; a plurality of scan lines and data lines, arranged on the substrate with each scan line and data line... Agent:

20150137132 - Electroluminescence display device: Disclosed is an electroluminescence device having a substrate, a thin film transistor over the substrate, an insulating film over the thin film transistor, an electroluminescence element over the insulating film, a passivation film over the electroluminescence element, and a counter substrate over the passivation film. The electroluminescence element is configured... Agent:

20150137131 - Flexible display apparatus and a manufacturing method thereof: A flexible display apparatus includes: a flexible substrate; a display unit on the flexible substrate; and a thin-film encapsulating layer on the display unit. The thin-film encapsulating layer includes at least one organic layer and at least one inorganic layer. The inorganic layer comprises carbon having a concentration gradient distributed... Agent: Samsung Display Co., Ltd.

20150137130 - Tft array substrate, display panel and display device: The present invention discloses a TFT array substrate, comprising: a plurality of scan lines; a plurality of data lines; pixel units located in areas defined by adjacent scan lines and adjacent data lines; wherein each of the pixel units comprises a first electrode and a second electrode stacked and insulated... Agent: Shanghai Avic Optoelectronics Co., Ltd.

20150137129 - Tft substrate and method of repairing the same: A thin film transistor (TFT) substrate includes; a substrate; a plurality of scan lines, disposed on the substrate; a plurality of data lines, disposed across the scan lines; a scan line insulting layer disposed between the scan lines and the data lines; a plurality of thin film transistors, each of... Agent: Chunghwa Picture Tubes, Ltd.

20150137133 - Forming of a heavily-doped silicon layer on a more lightly-doped silicon substrate: A method of forming a heavily-doped silicon layer on a more lightly-doped silicon substrate including the steps of depositing a heavily-doped amorphous silicon layer; depositing a silicon nitride layer; and heating the amorphous silicon layer to a temperature higher than or equal to the melting temperature of silicon.... Agent: Stmicroelectronics (crolles 2) Sas

20150137137 - Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown p-type gallium nitride as a current blocking layer: A current aperture vertical electron transistor (CAVET) with ammonia (NH3) based molecular beam epitaxy (MBE) grown p-type Gallium Nitride (p-GaN) as a current blocking layer (CBL). Specifically, the CAVET features an active buried Magnesium (Mg) doped GaN layer for current blocking purposes. This structure is very advantageous for high power... Agent: The Regents Of The University Of California

20150137141 - Gallium nitride devices: Semiconductor structures comprising a III-nitride (e.g., gallium nitride) material region and methods associated with such structures are provided. In some embodiments, the structures include an electrically conductive material (e.g., gold) separated from certain other region(s) of the structure (e.g., a silicon substrate) by a barrier material in order to limit,... Agent: International Rectifier Corporation

20150137136 - Gallium nitride semiconductor substrate with semiconductor film formed therein: A method of fabricating a single crystal gallium nitride substrate the step of cutting an ingot of single crystal gallium nitride along predetermined planes to make one or more signal crystal gallium nitride substrates. The ingot of single crystal gallium nitride is grown by vapor phase epitaxy in a direction... Agent:

20150137134 - Method and system for interleaved boost converter with co-packaged gallium nitride power devices: An electronic package includes a leadframe and a plurality of pins. The electronic package also includes a first gallium nitride (GaN) transistor comprising a source, gate, and drain and a second GaN transistor comprising a source, gate, and drain. The source of the first GaN transistor is electrically connected to... Agent: Avogy, Inc.

20150137139 - Semiconductor device and method for fabricating a semiconductor device: A semiconductor device is disclosed. In one embodiment, the semiconductor device includes two different semiconductor materials. The two semiconductor materials are arranged adjacent one another in a common plane.... Agent:

20150137135 - Semiconductor devices with integrated schotky diodes and methods of fabrication: An embodiment of a semiconductor device includes a semiconductor substrate that includes an upper surface and a channel, a gate electrode disposed over the substrate electrically coupled to the channel, and a Schottky metal layer disposed over the substrate adjacent the gate electrode. The Schottky metal layer includes a Schottky... Agent:

20150137138 - Transistor and method for producing transistor: A transistor that offers a high dielectric breakdown voltage of a gate insulating film with limited reduction of the current flowing between drain and source electrodes. The transistor has a semiconductor layer, a gate insulating film on the semiconductor layer, a gate electrode on the gate insulating film, and a... Agent: Murata Manufacturing Co., Ltd.

20150137140 - Vertical gallium nitride jfet with gate and source electrodes on regrown gate: A semiconductor structure includes a GaN substrate with a first surface and a second surface. The GaN substrate is characterized by a first conductivity type and a first dopant concentration. A first electrode is electrically coupled to the second surface of the GaN substrate. The semiconductor structure further includes a... Agent:

20150137147 - Cmos with dual raised source and drain for nmos and pmos: An apparatus and a method for creating a CMOS with a dual raised source and drain for NMOS and PMOS. The spacers on both stack gates are of equal thickness. In this method, a first insulating layer is formed on the surface. The first region is then masked while the... Agent:

20150137142 - Junction field effect transistor cell with lateral channel region: A semiconductor device includes a junction field effect transistor cell with a top gate region, a lateral channel region and a buried gate region. The lateral channel region is arranged between the top gate region and the buried gate region along a vertical direction with respect to a first surface... Agent:

20150137143 - Junction field effect transistor cell with lateral channel region: A junction field effect transistor cell of a semiconductor device includes a top gate region, a lateral channel region and a buried gate region arranged along a vertical direction. The lateral channel region includes first zones of a first conductivity type and second zones of a second conductivity type which... Agent:

20150137144 - Predetermined kerf regions and methods of fabrication thereof: In one embodiment, the semiconductor die includes a selective epitaxial layer including device regions, and a masking structure disposed around sidewalls of the epitaxial layer. The masking structure is part of an exposed surface of the semiconductor die.... Agent: Infineon Technologies Ag

20150137145 - Semiconductor device and semiconductor device manufacturing method: The invention provides an ultra-low-on-resistance, excellent-reliability semiconductor device that can finely be processed using SiC and a semiconductor device producing method. A semiconductor device includes: a silicon carbide substrate; a first-conductive-type first silicon carbide layer provided on a first principal surface of the silicon carbide substrate; a second-conductive-type first silicon... Agent:

20150137146 - Transistor device: Various embodiments provide transistor devices and fabrication methods. An exemplary transistor device with improved carrier mobility can be formed by first forming a confining layer on a semiconductor substrate to confine impurity ions diffused from the semiconductor substrate to the confining layer. An epitaxial silicon layer can be formed on... Agent:

20150137148 - Optical sensor package: One or more embodiments are directed to system in package (SiP) for optical devices, including proximity sensor packaging. One embodiment is directed to an optical package that includes a stacked arrangement with a plurality of optical devices arranged over an image sensor processor die that is coupled to a first... Agent: Stmicroelectronics Pte Ltd.

20150137154 - Display device and method for manufacturing the same: It is an object of the present invention to provide a display device preventing the external invasion of water and/or oxygen and preventing the deterioration of a luminous element due to these invading substances and to provide a production method including simple production steps for producing the display device. The... Agent: Semiconductor Energy Laboratory Co., Ltd.

20150137151 - High power leds: LED chips and packages are disclosed having lenses made of materials that resist degradation at higher operation temperatures and humidity, and methods of fabricating the same. The lenses can be made of certain materials that can withstand high temperatures and high humidity, with the lenses mounted to the LED prior... Agent:

20150137149 - Led module and method of preparing the led module, lighting device: An LED module includes a submount having a face in a thickness direction thereof, an LED chip bonded to the face of the submount with a first bond, and a patterned wiring circuit electrically connected to the LED chip. The first bond transmits light emitted from the LED chip. The... Agent: Panasonic Corporation

20150137152 - Light emitting element and light emitting element array: A light emitting element includes a semiconductor including an active layer, and a planar shape of the light emitting elements including a concave polygon. The planar shape of the concave polygon has interior angles including at least one acute angle.... Agent: Nichia Corporation

20150137153 - Method for integrating a light emitting device: Light emitting devices and methods of integrating micro LED devices into light emitting device are described. In an embodiment a light emitting device includes a reflective bank structure within a bank layer, and a conductive line atop the bank layer and elevated above the reflective bank structure. A micro LED... Agent:

20150137150 - Vertical multi-junction light emitting diode: An embodiment of the invention comprises a first III-V semiconductor structure including a first light emitting layer disposed between a first n-type region and a first p-type region, and a second III-V semiconductor structure including a second light emitting layer disposed between a second n-type region and a second p-type... Agent:

20150137155 - Semiconductor light source comprising a first and second light-emitting diode chip and a first and second phosphor fluorescent substance: A semiconductor light source comprising first and second light-emitting diode chips; and a conversion element containing a first phosphor and a second phosphor, wherein the conversion element is disposed downstream of the first and second light-emitting diode chips. The first light-emitting diode chip emits electromagnetic radiation with a first emission... Agent:

20150137156 - Semiconductor light emitting device including gaas substrate: A semiconductor light emitting device including: a substrate made of GaAs; and a semiconductor layer formed on the substrate, in which part of the substrate on a side opposite to the semiconductor layer is removed by etching so that the semiconductor light emitting device has a thickness of not more... Agent:

20150137166 - Epoxy resin composition for optical semiconductor device and optical semiconductor device using the same: The present invention relates to an epoxy resin composition for an optical semiconductor device having an optical semiconductor element mounting region and having a reflector that surrounds at least a part of the region, the epoxy resin composition being an epoxy resin composition for forming the reflector, the epoxy resin... Agent: Nitto Denko Corporation

20150137157 - Illuminating device: An illuminating device including a substrate, a light-emitting diode element disposed on the substrate, an electrode element, and a sealing ring. The substrate has a groove, and the electrode element has a retaining slot disposed in the groove. The sealing ring is embedded into the retaining slot and a part... Agent: Lextar Electronics Corporation

20150137163 - Led cap containing quantum dot phosphors: An LED device has a cap containing one or more quantum dot (QD) phosphors. The cap may be sized and configured to be integrated with standard LED packages. The QD phosphor may be held within the well of the LED package, so as to absorb the maximum amount of light... Agent:

20150137158 - Led package frame and led package structure: A light-emitting diode (LED) package frame is provided, including a leadframe and an insulating member. The leadframe includes a first electrode and a second electrode separated from each other. The insulating member is disposed between the first electrode and the second electrode for insulation between the first and second electrodes,... Agent: Lextar Electronics Corporation

20150137161 - Light-emitting device: Since, for example, a printed resistance 16, as a protective element, is formed on at least the top surface side, the back surface side, or the inside of an insulating film 2 and, for example, the printed resistance 16, as a protective element, is formed on the rear surface side... Agent:

20150137165 - Light-emitting device: A light-emitting device includes a mounting board, a light-emitting element mounted on a main face of the mounting board, and a sealing member covering the light-emitting element. The sealing member includes a first sealing layer covering a part of the main face of the mounting board and the light-emitting element,... Agent: Panasonic Intellectual Property Management Co., Ltd.

20150137167 - Light-emitting device: A light-emitting device, comprises a light-emitting stacked layer comprising a first conductivity type semiconductor layer; a light-emitting layer formed on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer formed on the light-emitting layer and comprising a first plurality of cavities; a first planarization layer formed... Agent:

20150137159 - Light-emitting device, light-emitting device package, and light unit: A light-emitting device, according to one embodiment, comprises: a light-emitting structure comprising a first conductive semiconductor layer, an active layer which is underneath the first conductive semiconductor layer, and a second conductive semiconductor layer which is underneath the active layer; a reflective electrode, which is arranged under the light-emitting structure;... Agent:

20150137160 - Light-emitting device, light-emitting device package, and light unit: A light-emitting device, according to one embodiment, comprises: a transparent conductive oxide film; an active layer which comes into contact with a lower surface of the transparent conductive oxide layer; a first conductive semiconductor layer which comes into contact with a lower surface of the active layer; a reflective electrode... Agent:

20150137162 - Optoelectronic semiconductor component with sapphire flip-chip: An optoelectronic semiconductor component has a volume-emitting sapphire flip-chip with an upper side and a lower side. This optoelectronic semiconductor component is embedded in an optically transparent mold body with an upper side and a lower side.... Agent:

20150137164 - Semiconductor light emitting device and method for manufacturing the same: Provided is a semiconductor light emitting device 1 includes a semiconductor stacked layer 2 having a light extraction surface 3a perpendicular to a stacked surface of the semiconductor stacked layer 2, a light transmissive light guide member 3 disposed on the semiconductor stacked Layer 2, a light reflective member 4... Agent:

20150137168 - Wavelength-converting light emitting diode (led) chip and led device equipped with chip: A wavelength-converted light emitting diode (LED) chip is provided. The wavelength-converted LED chip includes an LED chip and a wavelength-converted layer. The LED chip emits light in a predetermined wavelength region. The wavelength-converted layer is formed of a resin containing phosphor bodies of at least one kind which convert a... Agent:

20150137169 - Semiconductor light-emitting device: A semiconductor light-emitting device comprises a semiconductor stack having a first surface, wherein the first surface comprises multiple protrusion portions and multiple concave portions; a first electrode on the first surface and electrically connecting with the semiconductor stack; a second electrode on the first surface and electrically connecting with the... Agent:

20150137170 - Semiconductor light-emitting element and manufacturing method for the same: A semiconductor light-emitting element includes a substrate, a first metal layer, a second metal layer, a translucent conductive layer, and a semiconductor layer with a light-emitting region. The translucent conductive layer includes an end face intersecting a plane orthogonal to the thickness direction of the substrate. The substrate includes an... Agent:

20150137171 - Curable composition: Provided are a curable composition and its use. The curable composition has excellent processability, workability and adhesiveness, exhibits excellent light extraction efficiency, crack resistance, hardness, thermal and shock resistance and adhesiveness after curing, has long-lasting durability and reliability even under harsh conditions, and does not cause whitening or surface stickiness.... Agent: Lg Chem, Ltd.

20150137172 - Polycarbosilane and curable compositions for led encapsulants comprising same: o

20150137173 - Nitride semiconductor light-emitting element: A nitride semiconductor light-emitting element including a high concentration silicon-doped layer doped with silicon at a high concentration of 2×1019 atoms/cm3, and a dislocation reduction layer for laterally bending a threading dislocation on the high concentration silicon-doped layer.... Agent:

20150137174 - Methods and apparatus for increased holding voltage in silicon controlled rectifiers for esd protection: Methods and apparatus for increased holding voltage SCRs. A semiconductor device includes a semiconductor substrate of a first conductivity type; a first well of the first conductivity type; a second well of a second conductivity type adjacent to the first well, an intersection of the first well and the second... Agent:

20150137175 - Charge reservoir igbt top structure: An IGBT device includes one or more trench gates disposed over a semiconductor substrate and a floating body region of the first conductivity type disposed between two neighboring trench gates and between a semiconductor substrate and a heavily doped top region of the second conductivity type. A body region of... Agent: Alpha And Omega Semiconductor Incorporated

20150137177 - Semiconductor device having polysilicon plugs with silicide crystallites: A semiconductor device includes a field effect transistor structure having source zones of a first conductivity type and body zones of a second conductivity type which is the opposite of the first conductivity type, the source zones adjoining a first surface of a semiconductor die comprising the source and the... Agent:

20150137176 - Semiconductor power device: A semiconductor power device is provided, comprising a substrate of a first conductive type, a buffering layer of a second conductive type formed on the substrate, a voltage supporting layer formed on the buffering layer, and alternating sections of different conductive types formed at the substrate. The voltage supporting layer... Agent: United Microelectronics Corp.

20150137178 - Metal-semiconductor-metal (msm) heterojunction diode: In one aspect, a diode comprises: a semiconductor layer having a first side and a second side opposite the first side, the semiconductor layer having a thickness between the first side and the second side, the thickness of the semiconductor layer being based on a mean free path of a... Agent:

20150137180 - Finfet with bottom sige layer in source/drain: A FinFET includes a substrate, a fin structure on the substrate, a source in the fin structure, a drain in the fin structure, a channel in the fin structure between the source and the drain, a gate dielectric layer over the channel, and a gate over the gate dielectric layer.... Agent:

20150137179 - Power device: A power device disclosed herein comprises a substrate, a first semiconductor layer formed on the substrate, a second semiconductor layer formed on the first semiconductor layer and comprising a first element of group III, a third semiconductor layer formed on the second semiconductor layer and a plurality of first interlayers... Agent: Epistar Corporation

20150137183 - Controlling the shape of source/drain regions in finfets: An integrated circuit structure includes a fin field-effect transistor (FinFET) including a semiconductor fin over and adjacent to insulation regions; and a source/drain region over the insulation regions. The source/drain region includes a first and a second semiconductor region. The first semiconductor region includes silicon and an element selected from... Agent:

20150137182 - Semiconductor device having v-shaped region: Among other things, a semiconductor device or transistor and a method for forming the semiconductor device are provided for herein. The semiconductor device comprises one or more v-shaped recesses in which stressed monocrystalline semiconductor material, such as silicon germanium, is grown, to form at least one of a source or... Agent:

20150137181 - Stress inducing contact metal in finfet cmos: A method of forming a semiconductor structure includes forming a first plurality of fins in a first region of a semiconductor substrate and a second plurality of fins in a second region of a semiconductor substrate. A gate structure is formed covering a first portion of the first and second... Agent: International Business Machines Corporation

20150137184 - Semiconductor device and method of manufacturing a semiconductor device: A method of manufacturing a semiconductor device includes laminating and forming an electron transit layer, an electron supplying layer, an etching stop layer, and a p-type film on a substrate sequentially, the p-type film being formed of a nitride semiconductor material that includes Al doped with an impurity element that... Agent:

20150137186 - Formation of an asymmetric trench in a semiconductor substrate and a bipolar semiconductor device having an asymmetric trench isolation region: Disclosed is a trench formation technique wherein an opening having a first sidewall with planar contour and a second sidewall with a saw-tooth contour is etched through a semiconductor layer and into a semiconductor substrate. Then, a crystallographic wet etch process expands the portion of the opening within the semiconductor... Agent: International Business Machines Corporation

20150137185 - Heterojunction bipolar transistors with an airgap between the extrinsic base and collector: Fabrication methods, device structures, and design structures for a heterojunction bipolar transistor. A collector is formed in a semiconductor substrate, an intrinsic base is formed on the semiconductor substrate, and an extrinsic base is formed on the intrinsic base. An airgap is located vertically between the extrinsic base and the... Agent: International Business Machines Corporation

20150137187 - Semiconductor wafer, manufacturing method of semiconductor wafer and method for maunfacturing composite wafer: A semiconductor wafer comprises, on a semiconductor crystal layer forming wafer, a first semiconductor crystal layer, a second semiconductor crystal layer, and a third semiconductor crystal layer in this order, wherein both the etching rates of the first semiconductor crystal layer and the third semiconductor crystal layer by a first... Agent: Sumitomo Chemical Company, Limited

20150137188 - Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus: A solid-state imaging device including a photoelectric conversion element operable to generate electric charge according to the amount of incident light and to accumulate the electric charge in the inside thereof, an electric-charge holding region in which the electric charge generated through photoelectric conversion by the photoelectric conversion element is... Agent:

20150137189 - Cnt-based sensors: devices, processes and uses thereof: Disclosed herein are methods of preparing and using doped MWNT electrodes, sensors and field-effect transistors. Devices incorporating doped MWNT electrodes, sensors and field-effect transistors are also disclosed.... Agent:

20150137191 - Field effect transistor-based bio-sensor: An apparatus comprises: a sensing element formed on a buried oxide layer of a substrate and providing communication between a source region and a drain region; a gate dielectric layer on the sensing element, the gate dielectric layer defining a sensing surface on the sensing element; a passive surface surrounding... Agent:

20150137190 - Hydrogen ion sensor: Provided is a hydrogen ion sensor including: a substrate having a well and a first contact, the well having a second, a third, a fourth and a fifth contacts, the second contact having the same conductive type as the well, and the third, the fourth, and the fifth contacts having... Agent:

20150137192 - High voltage junction field effect transistor: The present invention discloses a high voltage JFET. The high voltage JFET includes a second conductivity type drift region located on the first conductivity type epitaxial layer; a second conductivity type drain heavily doped region located in the second conductivity type drift region; a drain terminal oxygen region located on... Agent:

20150137193 - Finfet structures with fins recessed beneath the gate: A semiconductor structure may include a semiconductor fin, a gate over the semiconductor fin, a spacer on a sidewall of the gate, an angled recess region in an end of the semiconductor fin beneath the spacer, and a first semiconductor region filling the angled recess. The angled recess may be... Agent: International Business Machines Corporation

20150137195 - Gate protection caps and method of forming the same: A structure includes a substrate, a gate structure over the substrate, a dielectric layer over the substrate, and a cap over a gate electrode of the gate structure. Top surfaces of the dielectric layer and gate electrode are co-planar. The gate structure extends a gate lateral distance between first and... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20150137198 - In-situ doping of arsenic for source and drain epitaxy: A method includes forming a gate stack over a semiconductor region, and recessing the semiconductor region to form a recess adjacent the gate stack. A silicon-containing semiconductor region is epitaxially grown in the recess to form a source/drain stressor. Arsenic is in-situ doped during the step of epitaxially growing the... Agent:

20150137194 - Inverted contact and methods of fabrication: An inverted contact and methods of fabrication are provided. A sacrificial layer is patterned in an inverted trapezoid shape, and oxide is deposited around the pattern. The sacrificial layer is removed, and a metal contact material is deposited, taking an inverted-trapezoid shape. Embodiments of the present invention provide an inverted... Agent: Globalfoundries Inc.

20150137196 - Metal oxide semiconductor transistor and manufacturing method thereof: The present invention provides a MOS transistor, including a substrate, a gate oxide, a gate, a source/drain region and a silicide layer. The gate oxide is disposed on the substrate and the gate is disposed on the gate oxide. The source/drain region is disposed in the substrate at two sides... Agent:

20150137197 - Semiconductor structure having trimming spacers: A semiconductor structure includes a substrate, a gate electrode disposed on the substrate, wherein the gate electrode has a first top surface. Agate dielectric layer is disposed between the substrate and the gate electrode. A silicon carbon nitride spacer surrounds the gate electrode, wherein the silicon carbon nitride spacer has... Agent:

20150137199 - Solid-state imaging device: A solid-state imaging device according to the present disclosure includes: a charge storage region that stores a signal charge obtained through photoelectric conversion in a photoelectric conversion film; an amplification transistor that amplifies the signal charge stored in the charge storage region in a corresponding pixel; a contact plug that... Agent:

20150137200 - Hybrid domain wall-hall cross device: A hybrid domain wall Hall cross device consists of a semiconductor Hall cross having a top surface and a pair of arms intersecting at a center region, and a ferromagnetic wire fabricated on the top surface, electrically isolated from the Hall cross, and having a constriction proximate to the center... Agent: The Government Of The United States Of America, As Represented By The Secretary Of The Navy

20150137202 - Cell-based ic layout system and cell-based ic layout method: A decoupling capacitor cell includes: a first decoupling capacitor formed by only a pMOS transistor; and a second decoupling capacitor formed by two metal layers. The decoupling capacitor cell is arranged in an unused region not occupied by basic cells in a cell-based IC and is connected to a power... Agent:

20150137201 - High density linear capacitor: A methods for fabricating a capacitor structure includes fabricating polysilicon structures on a semiconductor substrate. The method further includes fabricating M1 to diffusion (MD) interconnects on the semiconductor substrate. The polysilicon structures are disposed in an interleaved arrangement with the MD interconnects. The method also includes selectively connecting the interleaved... Agent: Qualcomm Incorporated

20150137203 - Forming finfet cell with fin tip and resulting device: Methods for forming a variable fin FinFET cell that can withstand a larger voltage without gate oxide breakdown at a fin tip and the resulting devices are disclosed. A plurality of fins is formed above a substrate, a portion of a fin is removed, forming a fin tip, a first... Agent: Globalfoundries Inc.

20150137204 - Memory circuit structure and semiconductor process for manufacturing the same: A semiconductor process for manufacturing particular patterns includes the steps of forming a target layer and evenly-spaced core bodies on a substrate, conformally forming a hard mask layer, forming a first photoresist covering a predetermined region on the hard mask layer wherein the predetermined region encompasses at least two core... Agent: Powerchip Technology Corporation

20150137205 - Memory device: According to example embodiments, a memory device includes a substrate, a channel region on the substrate, a plurality of gate electrode layers stacked on each other on the substrate, and a plurality of contact plugs. The gate electrode layers are adjacent to the channel region and extend in one direction... Agent:

20150137207 - Flash memory embedded with hkmg technology: An integrated circuit structure includes a flash memory cell and a logic MOS device. The flash memory cell includes a floating gate dielectric, a floating gate overlying the floating gate dielectric, a control gate overlying the floating gate, a word-line on a first side of the floating gate and the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20150137206 - Hk embodied flash memory and methods of forming the same: A method includes forming a selection gate and a control gate for a flash memory cell in a memory device region. The selection gate and the control gate are over a semiconductor substrate. A protection layer is formed to cover the selection gate and the control gate. Stacked layers are... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20150137208 - Nand string containing self-aligned control gate sidewall cladding: A method of making a NAND string includes forming a tunnel dielectric over a semiconductor channel, forming a charge storage layer over the tunnel dielectric, forming a blocking dielectric over the charge storage layer, and forming a control gate layer over the blocking dielectric. The method also includes patterning the... Agent:

20150137214 - Methods of forming semiconductor structures including bodies of semiconductor material: Semiconductor structures that include bodies of a semiconductor material spaced apart from an underlying substrate. The bodies may be physically separated from the substrate by at least one of a dielectric material, an open volume and a conductive material. The bodies may be electrically coupled by one or more conductive... Agent:

20150137212 - Nonvolatile semiconductor memory device and method for manufacturing the same: On a silicon substrate is formed a stacked body by alternately stacking a plurality of silicon oxide films and silicon films, a trench is formed in the stacked body, an alumina film, a silicon nitride film and a silicon oxide film are formed in this order on an inner surface... Agent: Kabushiki Kaisha Toshiba

20150137213 - Nonvolatile semiconductor storage device: According to one embodiment, a control gate is formed on the semiconductor substrate and includes a cylindrical through hole. A block insulating film, a charge storage film, a tunnel insulating film, and a semiconductor layer are formed on a side surface of the control gate inside the through hole. The... Agent: Kabushiki Kaisha Toshiba

20150137209 - Semiconductor device and method of manufacturing the same: A semiconductor device includes a first channel layer, a second channel layer protruding from the first channel layer, a pipe gate including a silicide area surrounding the first channel layer, a tunnel insulating layer surrounding the second channel layer, a data storage layer surrounding the second channel layer with the... Agent: Sk Hynix Inc.

20150137211 - Semiconductor device manufacturing method and semiconductor device: A semiconductor device manufacturing method includes: forming an element isolation insulating film in a semiconductor substrate; forming a first film on a surface of the semiconductor substrate; forming a second film on the element isolation insulating film and on the first film; forming a first resist pattern that includes a... Agent:

20150137210 - Vertical memory devices and methods of manufacturing the same: A method of manufacturing a vertical memory device includes forming alternating and repeating insulating interlayers and sacrificial layers on a substrate, the sacrificial layers including polysilicon or amorphous silicon, forming channel holes through the insulating interlayers and the sacrificial layers, forming channels in the channel holes, etching portions of the... Agent:

20150137215 - Semiconductor device: A semiconductor memory array includes a first nonvolatile memory cell having a first charge storage layer and a first gate electrode and a second nonvolatile memory cell, adjacent to the first memory cell in a first direction, having a second charge storage layer and a second gate electrode. The first... Agent:

20150137219 - Semiconductor device: A semiconductor device includes a fin-shaped silicon layer and a pillar-shaped silicon layer on the fin-shaped silicon layer, where a width of the pillar-shaped silicon layer is equal to a width of the fin-shaped silicon layer. Diffusion layers reside in upper portions of the pillar-shaped silicon layer and fin-shaped silicon... Agent: Unisantis Electronics Singapore Pte. Ltd.

20150137218 - Semiconductor device with surrounding gate transistor: A method for producing a semiconductor device includes a first step of forming a fin-shaped silicon layer on a silicon substrate using a first resist and forming a first insulating film therearound; and a second step of forming a second insulating film around the fin-shaped silicon layer and etching the... Agent:

20150137217 - Semiconductor power modules and devices: An electronic component is described which includes a first transistor encased in a first package, the first transistor being mounted over a first conductive portion of the first package, and a second transistor encased in a second package, the second transistor being mounted over a second conductive portion of the... Agent:

20150137216 - Vertical memory devices and methods of manufacturing the same: A vertical memory device includes a substrate, a channel, gate lines and a connecting portion. A plurality of the channels extend in a first direction which is vertical to a top surface of a substrate. A plurality of the gate lines are stacked in the first direction to be spaced... Agent:

20150137220 - Field effect transistor, termination structure and associated method for manufaturing: The present disclosure discloses a field effect transistor (“FET”), a termination structure and associated method for manufacturing. The termination structure for the FET includes a plurality of termination cells arranged substantially in parallel from an inner side toward an outer side of a termination area of the FET. Each of... Agent: Chengdu Monolithic Power Systems Co., Ltd.

20150137221 - Semiconductor device and method for manufacturing same: A semiconductor device includes: a substrate with an off-angle; an SiC layer provided on a principal surface of the substrate, including an n type drift region, and having a trench whose bottom is located in the drift region; and a gate electrode provided in the trench in the SiC layer.... Agent:

20150137222 - Stress-reduced field-effect semiconductor device and method for forming therefor: A field-effect semiconductor device is provided. The field-effect semiconductor device includes a semiconductor body with a first surface defining a vertical direction. In a vertical cross-section the field-effect semiconductor device further includes a vertical trench extending from the first surface into the semiconductor body and comprising a field electrode, a... Agent:

20150137225 - Oxide terminated trench mosfet with three or four masks: An oxide termination semiconductor device may comprise a plurality of gate trenches, a gate runner, and an insulator termination trench. The gate trenches are located in an active region. Each gate trench includes a conductive gate electrode. The insulator termination trench is located in a termination region that surrounds the... Agent:

20150137224 - Semiconductor device, integrated circuit and method of forming a semiconductor device: A semiconductor device comprises a transistor formed in a semiconductor body having a first main surface. The transistor comprises a source region, a drain region, a channel region, a drift zone, a source contact electrically connected to the source region, a drain contact electrically connected to the drain region, and... Agent:

20150137223 - Transistor component: A transistor component includes a semiconductor body, a first main electrode, a gate contact electrode, a plurality of transistor cells, and a plurality of gate electrodes. The semiconductor body has a drain region and a drift region of a first conduction type, and a body region of a second conduction... Agent:

20150137227 - High frequency switching mosfets with low output capacitance using a depletable p-shield: Aspects of the present disclosure describe a high density trench-based power MOSFETs with self-aligned source contacts and methods for making such devices. The source contacts are self-aligned with spacers and the active devices may have a two-step gate oxide. A lower portion may have a thickness that is larger than... Agent:

20150137226 - Semiconductor device and method for producing a semiconductor device: A semiconductor device includes a semiconductor substrate having first regions of a first conductivity type and body regions of the first conductivity type, which are arranged in a manner adjoining the first region and overlap the latter in each case on a side of the first region which faces a... Agent:

20150137228 - Semiconductor structure: A semiconductor structure is provided. The semiconductor structure comprises a substrate, a deep well formed in the substrate, a first well and a second well formed in the deep well, a gate electrode formed on the substrate and disposed between the first well and the second well, a first isolation,... Agent: United Microelectronics Corp.

20150137229 - Semiconductor device and method for fabricating the same: The invention provides a semiconductor device, including: a substrate having a first conductivity type, including: a body region having the first conductivity type; a source region formed in the body region; a drift region having a second conductivity type adjacent to the body region, wherein the first conductivity type is... Agent: Vanguard International Semiconductor Corporation

20150137232 - Lateral double diffused metal oxide semiconductor device and manufacturing method thereof: The present invention discloses a lateral double diffused metal oxide semiconductor (LDMOS) device and a manufacturing method thereof. The LDMOS device includes: drift region, an isolation oxide region, a first oxide region, a second oxide region, a gate, a body region, a source, and a drain. The isolation oxide region,... Agent: Richtek Technology Corporation

20150137231 - Lateral double diffused metal-oxide-semiconductor device and method for fabricating the same: A lateral double diffused metal-oxide-semiconductor device includes: a semiconductor substrate; an epitaxial semiconductor layer disposed over the semiconductor substrate; a gate structure disposed over the epitaxial semiconductor layer; a first doped region disposed in the epitaxial semiconductor layer at a first side of the gate structure; a second doped region... Agent: Vanguard International Semiconductor Corporation

20150137230 - Laterally diffused metal oxide semiconductor and manufacturing method thereof: A laterally diffused metal oxide semiconductor (LDMOS) and a manufacturing method thereof are provided. The LDMOS includes a substrate, a gate, a first well and a shallow trench isolation (STI). The gate is disposed above the substrate. The gate has a first gate region having a first dopant type and... Agent: United Microelectronics Corp.

20150137233 - High voltage device fabricated using low-voltage processes: A high-voltage transistor includes an active region including a diffused region of a first conductivity type defined by inner edges of a border of shallow trench isolation. A gate having side edges and end edges is disposed over the active region. Spaced apart source and drain regions of a second... Agent: Microsemi Soc Corporation

20150137235 - Finfet semiconductor device having local buried oxide: There is set forth herein in one embodiment a FinFET semiconductor device having a fin extending from a bulk silicon substrate, wherein there is formed wrapped around a portion of the fin a gate, and wherein proximate a channel area of the fin aligned to the gate there is formed... Agent: Globalfoundries Inc

20150137238 - High-frequency semiconductor device and method of manufacturing the same: A high-frequency semiconductor device, wherein on one surface of a semiconductor substrate, a first insulating layer, an undoped epitaxial polysilicon layer in a state of column crystal, a second insulating layer, and a semiconductor layer are formed in order from a side of the one surface, and a high-frequency transistor... Agent: Sony Corporation

20150137242 - Insulation wall between transistors on soi: An insulation wall separating transistors formed in a thin semiconductor layer resting on an insulating layer laid on a semiconductor substrate, this wall being formed of an insulating material and comprising a wall crossing the thin layer and the insulating layer and penetrating into the substrate, and lateral extensions extending... Agent:

20150137234 - Mechanisms for forming semiconductor device structure with floating spacer: Embodiments of mechanisms for forming a semiconductor device structure with floating spacers are provided. The semiconductor device structure includes a silicon-on-insulator (SOI) substrate and a gate stack formed on the SOI substrate. The semiconductor device structure also includes gate spacers formed on sidewalls of the gate stack. The gate spacers... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20150137243 - Replacement metal gate finfet: A method for fabricating a field effect transistor device includes depositing a hardmask over a semiconductor layer depositing a metallic alloy layer over the hardmask, defining a semiconductor fin, depositing a dummy gate stack material layer conformally on exposed portions of the fin, patterning a dummy gate stack by removing... Agent:

20150137244 - Replacement metal gate finfet: A field effect transistor device includes a fin including a semiconductor material arranged on an insulator layer, the fin including a channel region, a hardmask layer arranged partially over the channel region of the fin, a gate stack arranged over the hardmask layer and over the channel region of the... Agent:

20150137245 - Replacement metal gate finfet: A field effect transistor device includes a fin including a semiconductor material arranged on an insulator layer, the fin including a channel region, a hardmask layer arranged partially over the channel region of the fin, a gate stack arranged over the hardmask layer and over the channel region of the... Agent:

20150137239 - Semiconductor device and method of manufacturing the same: To suppress performance degradation of a semiconductor device, when the width of a first active region having a first field effect transistor formed therein is smaller than the width of a second active region having a second field effect transistor formed therein, the height of a surface of a first... Agent:

20150137240 - Semiconductor device with a low-k spacer and method of forming the same: A device includes a semiconductor substrate. A gate stack on the semiconductor substrate includes a gate dielectric layer and a gate conductor layer. Low-k spacers are adjacent to the gate dielectric layer. Raised source/drain (RSD) regions are adjacent to the low-k spacers. The low-k spacers are embedded in an ILD... Agent:

20150137241 - Semiconductor element and display device using the same: A semiconductor having an active layer; a gate insulating film in contact with the semiconductor; a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the active layer; a photosensitive organic resin film formed on the first nitride insulating film;... Agent:

20150137236 - Silicon-on-insulator finfet with bulk source and drain: Embodiments of the invention provide a semiconductor structure including a finFET having an epitaxial semiconductor region in direct physical contact with a plurality of fins, wherein the epitaxial semiconductor region traverses an insulator layer and is in direct physical contact with the semiconductor substrate. The gate of the finFET is... Agent: Globalfounderies Inc.

20150137237 - Undoped epitaxial layer for junction isolation in a fin field effect transistor (finfet) device: Approaches for isolating source and drain regions in an integrated circuit (IC) device (e.g., a fin field effect transistor (FinFET)) are provided. Specifically, the FinFET device comprises a gate structure formed over a finned substrate; an isolation oxide beneath an active fin channel of the gate structure; an embedded source... Agent: Globalfoundries Inc.

20150137246 - Floating body contact circuit method for improving esd performance and switching speed: Embodiments of systems, methods, and apparatus for improving ESD performance and switching time for semiconductor devices including metal-oxide-semiconductor (MOS) field effect transistors (FETs), and particularly to MOSFETs fabricated on Semiconductor-On-Insulator (“SOT”) and Silicon-On-Sapphire (“SOS”) substrates.... Agent:

20150137247 - Semiconductor device and manufacturing method thereof: A semiconductor device includes a p-type metal oxide semiconductor device (PMOS) and an n-type metal oxide semiconductor device (NMOS) disposed over a substrate. The PMOS has a first gate structure located on the substrate, a carbon doped n-type well disposed under the first gate structure, a first channel region disposed... Agent: Taiwan Semiconductor Manufacturing Company Ltd.

20150137248 - Semiconductor device: A standard cell has gate patterns extending in Y direction and arranged at an equal pitch in X direction. End portions of the gate patterns are located at the same position in Y direction, and have an equal width in X direction. A diode cell is located next to the... Agent:

20150137254 - Graded dielectric structures: Graded dielectric layers and methods of fabricating such dielectric layers provide dielectrics in a variety of electronic structures for use in a wide range of electronic devices and systems. In an embodiment, a dielectric layer is graded with respect to a doping profile across the dielectric layer. In an embodiment,... Agent:

20150137249 - Inter-level connection for multi-layer structures: Systems and methods are provided for fabricating a semiconductor device structure. An example semiconductor device structure includes a first device layer, a second device layer and an inter-level connection structure. The first device layer includes a first conductive layer and a first dielectric layer formed on the first conductive layer,... Agent: Taiwan Semiconductor Manufacturing Company Limited

20150137252 - Layout design system, layout design method, and semiconductor device fabricated by using the same: A layout design system includes a processor; a storage unit configured to store a first unit design having a first area, wherein in the first unit design, a termination is not placed on a border thereof; and a design module configured to generate a second unit design having a second... Agent:

20150137251 - Semiconductor device and method of manufacturing the same: A semiconductor device includes a substrate and a device isolation pattern extending from a surface of the substrate into the substrate. The device isolation pattern has an electrically negative property and a physically tensile property. The device isolation pattern delimits an active region of the substrate. A transistor is provided... Agent:

20150137253 - Stress-inducing structures, methods, and materials: Stress-inducing structures, methods, and materials are disclosed. In one embodiment, an isolation region includes an insulating material in a lower portion of a trench formed in a workpiece and a stress-inducing material disposed in a top portion of the trench over the insulating material.... Agent:

20150137250 - String select line (ssl) of three-dimensional memory array and method of fabricating the same: The present invention further provides a string select line (SSL) of a three-dimensional memory array, including: a dielectric substrate; an SSL structure disposed on the dielectric substrate, wherein the SSL structure includes a plurality of dielectric layers and a plurality of first conductive layers, the dielectric layers and the first... Agent: Macronix International Co., Ltd.

20150137256 - Finfet cell architecture with power traces: A finFET block architecture suitable for use of a standard cell library, is based on an arrangement including a first set of semiconductor fins in a first region of the substrate having a first conductivity type, and a second set of semiconductor fins in a second region of the substrate,... Agent: Synopsys, Inc.

20150137255 - Semiconductor device: A semiconductor device is described, including a substrate including a first area and a second area, a first MOS element of a first conductivity type in the first area, and a second MOS element of the first conductivity type in the second area. The first area is closer to a... Agent: United Microelectronics Corp.

20150137257 - Semiconductor device with dual work function gate stacks and method for fabricating the same: A method for fabricating a semiconductor device includes forming a gate dielectric layer over a substrate; forming a metal containing layer, containing an effective work function adjust species, over the gate dielectric layer; forming an anti-reaction layer over the metal containing layer; increasing an amount of the effective work function... Agent:

20150137258 - Forming a low votage antifuse device and resulting device: Methods for a low voltage antifuse device and the resulting devices are disclosed. Embodiments may include forming a plurality of fins above a substrate, removing a portion of a fin, forming a fin tip, forming a first area of a gate oxide layer above at least the fin tip, forming... Agent: Globalfoundries Inc.

20150137259 - Semiconductor device: A semiconductor device includes a substrate including a conductive region, an insulating layer disposed on the substrate and including an opening exposing the conductive region, and a conductive layer buried within the opening and including a first region disposed on inner side walls of the opening and a second region... Agent:

20150137260 - Semiconductor device: A plurality of unit MISFET elements connected in parallel with each other to make up a power MISFET are formed in an LDMOSFET forming region on a main surface of a semiconductor substrate. A control circuit that controls a gate voltage of the power MISFET is formed in a driver... Agent: Renesas Electronics Corporation

20150137261 - Semiconductor device: A fabricating method of a semiconductor device includes providing a substrate having a first region and a second region, forming a plurality of first gates in the first region of the substrate, such that the first gates are spaced apart from each other at a first pitch, forming a plurality... Agent:

20150137265 - Fin field effect transistor and method of forming the same: A fin field effect transistor and method of forming the same. The fin field effect transistor includes a semiconductor substrate having a fin structure and between two trenches with top portions and bottom portions. The fin field effect transistor further includes shallow trench isolations formed in the bottom portions of... Agent:

20150137264 - Finfet body contact and method of making same: A semiconductor device may include body contacts on a finFET device for ESD protection. The semiconductor device comprises a semiconductor fin, a source/drain region and a body contact. The source/drain region and the body contact are in the semiconductor fin. A portion of the fin is laterally between the source/drain... Agent:

20150137266 - Replacement channels for semiconductor devices and methods for forming the same using dopant concentration boost: A replacement channel and a method for forming the same in a semiconductor device are provided. A channel area is defined in a substrate which is a surface of a semiconductor wafer or a structure such as a fin formed over the wafer. Portions of the channel region are removed... Agent:

20150137267 - Replacement gate structures and methods of manufacturing: Gate structures and methods of manufacturing is disclosed. The method includes forming a continuous replacement gate structure within a trench formed in dielectric material. The method further includes segmenting the continuous replacement gate structure into separate replacement gate structures. The method further includes forming insulator material between the separate replacement... Agent:

20150137262 - Semiconductor device and method of fabricating the same: A semiconductor device includes: active fins protruding from an active layer and extending in a first direction; a gate structure on the active fins extending in a second direction intersecting the first direction; and a spacer on at least one side of the gate structure, wherein each of the active... Agent:

20150137263 - Semiconductor device having fin-type field effect transistor and method of manufacturing the same: A field effect transistor includes a fin structure, having a sidewall, protruding from a substrate, and a device isolation structure on the substrate, the device isolation structure defining the sidewall of the fin structure, wherein the fin structure includes a buffer semiconductor pattern disposed on the substrate and a channel... Agent:

20150137268 - Non-planar sige channel pfet: Systems and methods are provided for fabricating a semiconductor device structure. An example semiconductor device structure includes a channel layer formed of a Germanium compound having a Germanium concentration B formed on a semiconductor substrate having a Germanium concentration of A, the Germanium concentration of the substrate A being less... Agent: Taiwan Semiconductor Manfacturing Company Limited

20150137269 - Replacement gate mosfet with a high performance gate electrode: In a replacement gate scheme, a continuous material layer is deposited on a bottom surface and a sidewall surface in a gate cavity. A vertical portion of the continuous material layer is removed to form a gate component of which a vertical portion does not extend to a top of... Agent:

20150137270 - Superior integrity of a high-k gate stack by forming a controlled undercut on the basis of a wet chemistry: A transistor device includes a gate electrode structure. The gate electrode structure includes a high-k gate insulation layer, a metal-containing first electrode material positioned above the high-k gate insulation layer, and a second electrode material positioned above the metal-containing first electrode material. The high-k gate insulation layer has a length... Agent: Globalfoundries Inc.

20150137272 - Dielectric nanocomposites and methods of making the same: Techniques related to nanocomposite dielectric materials are generally described herein. These techniques may be embodied in apparatuses, systems, methods and/or processes for making and using such material. An example process may include: providing a film having a plurality of nanoparticles and an organic medium; comminuting the film to form a... Agent:

20150137271 - Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devices: One method disclosed herein includes, among other things, performing a process operation on an exposed surface of a substrate so as to form an H-terminated silicon surface, selectively forming a sacrificial material layer within a replacement gate cavity but not on the H-terminated silicon surface, forming a high-k layer of... Agent: Global Foundries Inc.

20150137273 - Method and device for self-aligned contact on a non-recessed metal gate: A methodology for forming a self-aligned contact (SAC) that exhibits reduced likelihood of a contact-to-gate short circuit failure and the resulting device are disclosed. Embodiments may include forming a replacement metal gate, with spacers at opposite sides thereof, on a substrate, forming a recess in an upper surface of the... Agent: Globalfoundries Inc.

20150137274 - Semiconductor sensor chips: Semiconductor sensor chips are provided. In some embodiments, a semiconductor sensor chip can include at least one wire bond pad on one side thereof, at least one bond pad on another, opposite side thereof, and at least one through-silicon via (TSV) extending therebetween and electrically connected to the bond pads... Agent: General Electric Company

20150137275 - Titanium nitride electrode: The present invention relates to a method for decreasing the impedance of a titanium nitride element for use in an electrode component. The method comprises obtaining a titanium nitride element and hydrothermally treating the titanium nitride element by immersing the titanium nitride element in a liquid comprising water while heating... Agent: Imec Vzw

20150137282 - Flow sensor, method for manufacturing flow sensor and flow sensor module: A flow sensor structure seals the surface of an electric control circuit and part of a semiconductor device via a manufacturing method that prevents occurrence of flash or chip crack when clamping the semiconductor device via a mold. The flow sensor structure includes a semiconductor device having an air flow... Agent:

20150137276 - Mechanisms for forming micro-electro mechanical system device: Embodiments of mechanisms for forming a micro-electro mechanical system (MEMS) device are provided. The MEMS device includes a CMOS substrate, a cap substrate, and a MEMS substrate bonded between the CMOS substrate and the cap substrate. The MEMS substrate includes a first movable element and a second movable element. The... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20150137283 - Mems devices, packaged mems devices, and methods of manufacture thereof: MEMS devices, packaged MEMS devices, and methods of manufacture thereof are disclosed. In one embodiment, a microelectromechanical system (MEMS) device includes a first MEMS functional structure and a second MEMS functional structure. An interior region of the second MEMS functional structure has a pressure that is different than a pressure... Agent:

20150137279 - Multi-die sensor device: A semiconductor device includes a lead frame having a flag and leads that surround the flag. The leads include a dummy lead that has first and second wire bonding areas. A first die is attached on the flag and electrically connected to the first wire bonding area. The first die... Agent:

20150137281 - Physical quantity measurement sensor: A physical quantity measurement sensor includes: a ceramic package including a plate provided with a flow port through which a fluid to be measured flows; an electronic component including a sensing element housed in the package to detect the pressure of the fluid to be measured having flown through the... Agent:

20150137278 - Semiconductor package with gel filled cavity: A semiconductor device package is assembled using a jig that alters the shape of gel material disposed in a cavity in the package. In one embodiment, a jig having a concave bottom surface is inserted onto uncured gel material disposed within a cavity in a housing of the package to... Agent:

20150137277 - Semiconductor sensor chips: Semiconductor sensor chips are provided. In some embodiments, a semiconductor sensor chip can include at least one wire bond pad on one side thereof, at least one bond pad on another, opposite side thereof, and at least one through-silicon via (TSV) extending therebetween and electrically connected to the bond pads... Agent: General Electric Company

20150137280 - Structures and formation methods of micro-electro mechanical system device: A structure and a formation method of a micro-electro mechanical system (MEMS) device are provided. The MEMS device includes a cap substrate and a MEMS substrate bonded with the cap substrate. The MEMS substrate includes a first movable element and a second movable element. The MEMS device also includes a... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20150137285 - Capacitive micromachined ultrasonic transducer and method of fabricating the same: A capacitive micromachined ultrasonic transducer and a method of fabricating the same are provided. The capacitive micromachined ultrasonic transducer includes a device substrate including a first trench defining a plurality of first portions corresponding to an element and a second trench spaced apart from the first trench; a supporting unit... Agent: Samsung Electronics Co., Ltd.

20150137284 - Microphone package and mounting structure thereof: There are provided a microphone package and a mounting structure thereof, allowing for an increase in a back volume, the microphone package including: a package substrate; an acoustic element mounted on the package substrate and having a space formed in a lower portion thereof; and at least one electronic component... Agent: Samsung Electro-mechanics Co., Ltd.

20150137291 - Magnetic memory cells and methods of formation: Methods of forming magnetic memory cells are disclosed. Magnetic and non-magnetic materials are formed into a primal precursor structure in an initial stress state of essentially no strain, compressive strain, or tensile strain. A stress-compensating material, e.g., a non-sacrificial, conductive material, is formed to be disposed on the primal precursor... Agent:

20150137287 - Magnetic memory devices having perpendicular magnetic tunnel structures therein: Magnetic memory cells include a magnetic tunnel junction and a first electrode, which is electrically coupled to the magnetic tunnel junction by a first conductive structure. This conductive structure includes a blocking layer and a seed layer, which extends between the blocking layer and the magnetic tunnel junction. The blocking... Agent:

20150137290 - Magnetic random access memory: A magnetic random access memory which is a memory cell array including a magnetoresistive effect element having a fixed layer whose magnetization direction is fixed, a recording layer whose magnetization direction is reversible, and a non-magnetic layer provided between the fixed layer and the recording layer, wherein all conductive layers... Agent: Kabushiki Kaisha Toshiba

20150137292 - Magnetoresistance sensor with perpendicular anisotropy: A nanoscale tunnel magneto-resistance (TMR) sensor comprising an in-plane-magnetized reference layer and a free layer comprising interfacial perpendicular anisotropy, wherein the free layer comprises a sensing layer for sensing resistance as a function of applied magnetic field and is tunable to vary the direction of the sensing layer magnetization to... Agent: The Regents Of The University Of California

20150137288 - Memory element and memory device: Spin transfer torque memory elements and memory devices are provided. In one embodiment, the spin transfer torque memory element includes a first portion including CoFeB, a second portion including CoFeB, an intermediate portion interposed between the first and second portions, a third portion adjoining the second portion opposite the intermediate... Agent:

20150137286 - Method to form mram by dual ion implantation: A method to form small magnetic random access memory (MRAM) by dual ion implantation is provided. The first ion implantation add oxygen-gettering material surrounding the photo mask opened areas including sidewall followed by oxygen ion implantation to fully oxidize these oxygen-getter implanted areas into an electrically insulating layers to avoid... Agent: T3memory, Inc.

20150137289 - Multiple-bits-per-cell voltage-controlled magnetic memory: Voltage controlled magneto-electric tunnel junctions and memory devices are described which provide efficient high speed voltage switching of non-volatile magnetic devices (MeRAM) at high cell densities. A multi-bit-per-cell (MBPC) MeRAM is described which requires only a single transistor to write and read two data bits from the one MBPC MeRAM... Agent: The Regents Of The University Of California

20150137293 - Spin-transfer torque magnetic random access memory (sttmram) with perpendicular laminated free layer: A perpendicular spin-transfer torque magnetic random access memory (STTMRAM) element includes a fixed layer having a magnetization that is substantially fixed in one direction and a barrier layer formed on top of the fixed layer and a free layer. The free layer has a number of alternating laminates, each laminate... Agent:

20150137294 - Image sensor package structure and method: Image sensor package structure and method are provided. The method includes: providing first substrate having upper surface on which image sensing areas and pads are formed; providing second substrate having through holes; forming tape film on upper surface of second substrate to seal each through hole; contacting lower surface of... Agent: China Wafer Level Csp Co., Ltd.

20150137296 - Color filter array and micro-lens structure for imaging system: A color filter array and micro-lens structure for imaging system and method of forming the color filter array and micro-lens structure. A micro-lens material is used to fill the space between the color filters to re-direct incident radiation, and form a micro-lens structure above a top surface of the color... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20150137298 - Light detection device: A semiconductor light detection element has a plurality of channels, each of which consists of a photodiode array including a plurality of avalanche photodiodes operating in Geiger mode, quenching resistors connected in series to the respective avalanche photodiodes, and signal lines to which the quenching resistors are connected in parallel.... Agent: Hamamatsu Photonics K.k.

20150137297 - Methods of forming imaging device layers using carrier substrates: An array of color filter elements may be formed over an array of photodiodes in an integrated circuit for an imaging device using a carrier substrate. The carrier substrate may have a planar surface with a release layer. A layer of color filter material may be applied to the release... Agent: Aptina Imaging Corporation

20150137295 - Two color detector leveraging resonant cavity enhancement for performance improvement: Methods and structures for providing single-color or multi-color photo-detectors leveraging cavity resonance for performance benefits. In one example, a radiation detector (110) includes a semiconductor absorber layer (210, 410A, 410B, 610, 810, 1010, 1030, 1210, 1230) having a first electrical conductivity type and an energy bandgap responsive to radiation in... Agent: Raytheon Company

20150137299 - Solid state imaging device and manufacturing method for solid state imaging device: There is provided a solid state imaging device according to the embodiment. The solid state imaging device includes an imaging area and an element isolation unit having a light shielding effect. In the imaging area, a plurality of photoelectric conversion elements is two-dimensionally arranged in a matrix in a semiconductor... Agent: Kabushiki Kaisha Toshiba

20150137300 - Infrared sensor device and method for producing an infrared sensor device: An infrared sensor device includes a semiconductor substrate, at least one sensor element that is micromechanically formed in the semiconductor substrate, and at least one calibration element, which is micromechanically formed in the semiconductor substrate, for the sensor element. An absorber material is arranged on the semiconductor substrate in the... Agent:

20150137301 - Manufacturing method for solid-state imaging device and solid-state imaging device: A method for manufacturing a solid-state imaging device comprises a first step of preparing an imaging element including a second principal surface having an electrode arranged thereon, and a photoelectric converter part configured to photoelectrically convert the incident energy line so as to generate a signal charge; a second step... Agent:

20150137302 - High speed backside illuminated, front side contact photodiode array: The present specification discloses front-side contact back-side illuminated (FSC-BSL) photodiode array having improved characteristics such as high speed of each photodiode, uniformity of the bias voltage applied to different photodiode, low bias voltage, reduced resistance of each photodiode, and an associated reduction in noise. The photodiode array is made of... Agent:

20150137303 - Mechanisms for forming micro-electro mechanical device: Embodiments of mechanisms for forming a micro-electro mechanical system (MEMS) device are provided. The MEMS device includes a substrate and a MEMS sensor over the substrate. The MEMS sensor includes a floating heater disposed over the substrate. The MEMS sensor further includes a heat sink disposed over the substrate and... Agent: Taiwan Semiconductor Manufacturing Co., Ltd

20150137304 - Structure and fabrication method of a high performance mems thermopile ir detector: The invention involves structure and fabrication method of a high performance IR detector. The structure comprises a substrate; a releasing barrier band on the substrate; a thermal isolation chamber constructed by the releasing barrier band; a black silicon-based IR absorber located right above the thermal isolation chamber and the black... Agent:

20150137305 - Protective structure and method for producing a protective structure: Described herein is a protective structure. The protective structure includes a semiconductor substrate, a first diode disposed at least one of in or on the semiconductor substrate and a diode arrangement disposed at least one of in or on the semiconductor substrate. The diode arrangement includes a stack of a... Agent:

20150137306 - Semiconductor device and method for manufacturing the same: An N type diffusion layer in which a high-side circuit region is disposed is formed from a surface of a P type epitaxial layer covering a surface of a P type semiconductor substrate to reach the surface of the semiconductor substrate. An N type high breakdown voltage isolation region is... Agent: Mitsubishi Electric Corporation

20150137307 - Integrated circuit assembly with faraday cage: An integrated circuit assembly is formed with an insulating layer, a semiconductor layer, an active device, first, second, and third electrically conductive interconnect layers, and a plurality of electrically conductive vias. The insulating layer has a first surface and a second surface. The second surface is below the first surface.... Agent:

20150137309 - Methods of fabricating isolation regions of semiconductor devices and structures thereof: Methods of fabricating isolation regions of semiconductor devices and structures thereof are disclosed. In a preferred embodiment, a semiconductor device includes a workpiece and at least one trench formed in the workpiece. The at least one trench includes sidewalls, a bottom surface, a lower portion, and an upper portion. A... Agent: Infineon Technologies Ag

20150137308 - Self-aligned dual-height isolation for bulk finfet: A method of forming a semiconductor structure includes forming a first isolation region between fins of a first group of fins and between fins of a second group of fins. The first a second group of fins are formed in a bulk semiconductor substrate. A second isolation region is formed... Agent: Globalfoundries Inc.

20150137310 - Air bridge structure having dielectric coating: A substrate having an air bridge structure with end portions disposed and supported on the substrate and an elevated portion disposed between the end portions is coated with a protective layer. The protective layer is patterned to: leave portions of the protective layer over elevated portion and at least over... Agent: Raytheon Company

20150137312 - Metal fuse structure for improved programming capability: Structure providing more reliable fuse blow location, and method of making the same. A vertical metal fuse blow structure has, prior to fuse blow, an intentionally damaged portion of the fuse conductor. The damaged portion helps the fuse blow in a known location, thereby decreasing the resistance variability in post-blow... Agent: International Business Machines Corporation

20150137311 - Thin beam deposited fuse: A back-end-of-line thin ion beam deposited fuse (204) is deposited without etching to connect first and second last metal interconnect structures (110, 120) formed with last metal layers (LM) in a planar multi-layer interconnect stack to programmably connect separate first and second circuit connected to the first and second last... Agent:

20150137313 - Coil arrangement with metal filling: Devices, methods and production devices that relate to the forming of a coil on a semiconductor substrate are provided. Arranged within the coil is a metal filling, for example with a density of less than 20%.... Agent:

20150137314 - Semiconductor device and semiconductor module: The semiconductor device of the present invention includes an insulating layer, a high voltage coil and a low voltage coil which are disposed in the insulating layer at an interval in the vertical direction, a low potential portion which is provided in a low voltage region disposed around a high... Agent: Rohm Co., Ltd.

20150137315 - Dram mim capacitor using non-noble electrodes: A method for forming a capacitor stack includes forming a first bottom electrode layer including a conductive metal nitride material. A second bottom electrode layer is formed above the first bottom electrode layer. The second bottom electrode layer includes a conductive metal oxide material, wherein the crystal structure of the... Agent:

20150137316 - Semiconductor device including a resistor and method for the formation thereof: A semiconductor structure includes a substrate and a resistor provided over the substrate. The resistor includes a first material layer, a second material layer, a first contact structure and a second contact structure. The first material layer includes at least one of a metal and a metal compound. The second... Agent:

20150137319 - Iii nitride semiconductor substrate, epitaxial substrate, and semiconductor device: In a semiconductor device 100, it is possible to prevent C from piling up at a boundary face between an epitaxial layer 22 and a group III nitride semiconductor substrate 10 by the presence of 30×1010 pieces/cm2 to 2000×1010 pieces/cm2 of sulfide in terms of S and 2 at %... Agent:

20150137317 - Semiconductor wafer, method of producing a semiconductor wafer and method of producing a composite wafer: A semiconductor wafer is provided. The semiconductor wafer comprises a sacrificial layer and a semiconductor crystal layer above a semiconductor crystal layer forming wafer, the semiconductor crystal layer forming wafer, the sacrificial layer and the semiconductor crystal layer being arranged in the order of the semiconductor crystal layer forming wafer,... Agent: National Institute Of Advanced Industrial Science And Technology

20150137318 - Semiconductor wafer, method of producing a semiconductor wafer and method of producing a composite wafer: A semiconductor wafer is provided. The semiconductor wafer comprises a sacrificial layer, a first semiconductor crystal layer, and a second semiconductor crystal layer above a semiconductor crystal layer forming wafer, wherein the semiconductor crystal layer forming wafer, the sacrificial layer, the first semiconductor crystal layer and the second semiconductor crystal... Agent: National Institute Of Advanced Industrial Science And Technology

20150137321 - Apparatus and method for magnetic-field guided metal-assisted chemical etching: A magnetic field-guided method of metal-assisted chemical etching comprises immersing a structure that comprises a two-dimensional magnetic pattern layer on a surface thereof in an etchant solution. The magnetic pattern layer sinks into the structure as portions of the structure directly under the magnetic pattern layer are etched. A programmable... Agent:

20150137320 - Semiconductor device and method of fabricating the same: A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A... Agent:

20150137322 - Semiconductor device and method of forming wlcsp using wafer sections containing multiple die: A semiconductor wafer contains semiconductor die separated by saw streets. The semiconductor wafer is singulated through a portion of the saw streets to form wafer sections each having multiple semiconductor die per wafer section attached by uncut saw streets. Each wafer section has at least two semiconductor die. The wafer... Agent: Stats Chippac, Ltd.

20150137329 - Component having a via and method for manufacturing it: An advantageous method and system for realizing electrically very reliable and mechanically extremely stable vias for components whose functionality is realized in a layer construction on a conductive substrate. The via (Vertical Interconnect Access), which is led to the back side of the component and which is used for the... Agent:

20150137323 - Method for fabricating through silicon via structure: A method for fabricating through silicon via (TSV) structure is disclosed. The method includes the steps of: providing a substrate; forming a through-silicon via (TSV) in the substrate; depositing a liner in the TSV; removing the liner in a bottom of the TSV; and filling a first conductive layer in... Agent: United Microelectronics Corp.

20150137327 - Semiconductor device and fabrication method thereof: The invention provides a semiconductor device. A buried layer is formed in a substrate. A first deep trench contact structure is formed in the substrate. The first deep trench contact structure comprises a conductor and a liner layer formed on a sidewall of the conductor. A bottom surface of the... Agent: Vanguard International Semiconductor Corporation

20150137325 - Semiconductor device having metal patterns and piezoelectric patterns: Provided is a semiconductor device. The semiconductor device includes a passivation layer defining a metal pattern on a first surface of a substrate, an inter-layer insulating layer disposed on a second surface of the substrate, and a piezoelectric pattern formed between the metal pattern and the passivation layer on the... Agent:

20150137326 - Semiconductor devices having through-electrodes and methods for fabricating the same: A semiconductor device includes a semiconductor substrate having a top surface and a bottom surface facing each other, an interlayer dielectric layer provided on the top surface of the semiconductor substrate and including an integrated circuit, an inter-metal dielectric layer provided on the interlayer dielectric layer and including at least... Agent:

20150137324 - Startup circuit and method for ac-dc converters: A pattern generator includes and upper chip and one or more lower chips. The upper chip includes an upper substrate and a plurality of conductive plates on the upper substrate. The plurality of conductive plates is arranged as an array. The one or more lower chips include one or more... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20150137328 - Through silicon via bonding structure: System and method for bonding semiconductor substrates is presented. A preferred embodiment comprises forming a buffer layer over a surface of a semiconductor substrate while retaining TSVs that protrude from the buffer layer in order to prevent potential voids that might form. A protective layer is formed on another semiconductor... Agent:

20150137330 - Method for estimating the diffusion length of metallic species within a three-dimensional integrated structure, and corresponding three-dimensional integrated structure: A three-dimensional integrated structure may include two assembled integrated circuits respectively including two metallic lines, and at least two cavities passing through one of the integrated circuits and opening onto two locations respectively in electrical contact with the two metallic lines. The cavities may be sized to place a measuring... Agent:

20150137331 - Polymeric materials in self-assembled arrays and semiconductor structures and methods comprising such polymeric materials: Methods for fabricating sublithographic, nanoscale microstructures in line arrays utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. Semiconductor structures may include self-assembled block copolymer materials in the form of lines of half-cylinders of a minority block matrix of a majority block of the block... Agent:

20150137332 - Carrier for a semiconductor layer: A carrier for carrying a semiconductor layer having a growth surface and at least one nano-patterned structure on the growth surface is provided. The at least one nano-patterned structure on the growth surface of the carrier has a plurality of mesas, a recess is formed between two adjacent mesas, in... Agent:

20150137333 - Methods of selectively forming a material using a parylene coating and related semiconductor structures: Methods for depositing a material, such as a metal or a transition metal oxide, using an ALD (atomic layer deposition) process and resulting structures are disclosed. Such methods include treating a surface of a semiconductor structure periodically throughout the ALD process to regenerate a blocking material or to coat a... Agent:

20150137334 - Semiconductor device and method of forming a shielding layer over a semiconductor die disposed in a cavity of an interconnect structure and grounded through the die tsv: A semiconductor device has an interconnect structure with a cavity formed partially through the interconnect structure. A first semiconductor die is mounted in the cavity. A first TSV is formed through the first semiconductor die. An adhesive layer is deposited over the interconnect structure and first semiconductor die. A shielding... Agent: Stats Chippac, Ltd.

20150137335 - Managing parasitic capacitance and voltage handling of stacked radio frequency devices: Various implementations enable management of parasitic capacitance and voltage handling of stacked integrated electronic devices. Some implementations include a radio frequency switch arrangement having a ground plane, a stack and a first solder bump. The stack is arranged in relation to the ground plane, and includes switching elements coupled in... Agent:

20150137336 - Semiconductor device, method of manufacturing the same, in-millimeter-wave dielectric transmission device, method of manufacturing the same, and in-millimeter-wave dielectric transmission system: A millimeter-wave dielectric transmission device. The millimeter-wave dielectric transmission device includes a semiconductor chip provided on one interposer substrate and capable of millimeter-wave dielectric transmission, an antenna structure connected to the semiconductor chip, two semiconductor packages including a molded resin configured to cover the semiconductor chip and the antenna structure,... Agent:

20150137338 - Semiconductor assembly and method of manufacturing the same: A method of making a semiconductor assembly is characterized by the step of attaching a chip-on-interposer subassembly on a base carrier with the chip inserted into a through opening of the base carrier and the interposer laterally extending beyond the through opening. The base carrier provides a platform for the... Agent:

20150137337 - Semiconductor package and lead frame: A semiconductor package is disclosed, which includes: a die paddle portion; a plurality of conductive portions circumventing the die paddle portion; a power bus bar and a ground bus bar formed around the periphery of the die paddle portion; a semiconductor element attached to the die paddle portion and electrically... Agent: Siliconware Precision Industries Co., Ltd

20150137340 - Embedded package security tamper mesh: A secure integrated circuit package is provided. The secure integrated circuit package includes a first substrate having an upper surface and a lower surface. A first plurality of solder balls are arranged in a pattern on the lower surface of the first substrate. A die is coupled to the upper... Agent:

20150137339 - Semiconductor package and method of manufacturing the same: Disclosed herein are a semiconductor package and a method of manufacturing the same. The semiconductor package includes: a substrate including a mounting electrode formed on both sides and a wiring; a plurality of first electronic devices mounted on the substrate; a second electronic devices mounted on the substrate; and a... Agent: Samsung Electro-mechanics Co., Ltd.

20150137341 - Chip package and method for forming the same: A chip package including a first substrate having a first surface and a second surface opposite thereto is provided. The first substrate has a micro-electric element and a plurality of conducting pads adjacent to the first surface. The first substrate has a plurality of openings respectively exposing a portion of... Agent:

20150137342 - Inductor/transformer outside of silicon wafer: An integrated circuit package includes an integrated circuit and an interposer layer. The interposer layer is arranged above the integrated circuit and includes an inductor formed at least partially within the interposer layer. The inductor includes a first pair of conductive pillars including a first conductive pillar and a second... Agent:

20150137343 - Enhanced die-up ball grid array and method for making the same: Methods of assembling a ball grid array (BGA) package is provided. One method includes providing a tape substrate that has a first surface and a second surface, attaching a first surface of a stiffener to the first substrate surface, mounting an IC die to the second stiffener surface, mounting a... Agent: Broadcom Corporation

20150137344 - Semiconductor device and method for manufacturing same: A semiconductor device has a circuit board including an insulation layer, a wiring layer formed on one surface of the insulation layer, and a buffer layer formed on the other surface of the insulation layer, a semiconductor element bonded to the wiring layer, a radiator member bonded to the buffer... Agent: Kabushiki Kaisha Toyota Jidoshokki

20150137345 - Semiconductor package having heat spreader: A semiconductor package includes a heat spreader. The semiconductor package includes a substrate, a first semiconductor chip disposed on the substrate, and a second semiconductor chip disposed on the first semiconductor chip. The heat spreader may be formed on the first semiconductor chip. A thermal interfacial material (TIM) layer may... Agent:

20150137346 - Stacked semiconductor package and manufacturing method thereof: Disclosed herein is a stacked semiconductor package in which semiconductor chips having various sizes are stacked. In accordance with one aspect of the present disclosure, a stacked semiconductor package includes a first semiconductor chip structure provided with a first semiconductor chip, a first mold layer surrounding the first semiconductor chip,... Agent: Nepes Co., Ltd.

20150137347 - Adhesive composition and semiconductor device using same: An adhesive composition comprising silver particles containing silver atoms and zinc particles containing metallic zinc, wherein the silver atom content is 90 mass % or greater and the zinc atom content is from 0.01 mass % to 0.6 mass %, with respect to the total transition metal atoms in the... Agent:

20150137348 - Electronic device: In a conventional electronic device and a method of manufacturing the same, reduction in cost of the electronic device is hindered because resin used in an interconnect layer on the solder ball side is limited. The electronic device includes an interconnect layer (a first interconnect layer) and an interconnect layer... Agent:

20150137352 - Mechanisms for forming post-passivation interconnect structure: Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a contact pad over a substrate. The semiconductor device also includes a passivation layer over the substrate and a first portion of the contact pad, and a second portion of the contact pad is exposed through... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20150137359 - Method for forming through silicon via with wafer backside protection: Semiconductor devices with through silicon vias (TSVs) are formed without copper contamination. Embodiments include exposing a passivation layer surrounding a bottom portion of a TSV in a silicon substrate, forming a silicon composite layer over the exposed passivation layer and over a bottom surface of the silicon substrate, forming a... Agent:

20150137356 - Non-cyanide electrolytic gold plating solution: The present invention provides a non-cyanogen type electrolytic gold plating solution, which can form a plating film capable of maintaining a high hardness even when the plating film is subjected to a heat treatment. A non-cyanogen type electrolytic gold plating solution of the present invention includes: a gold source including... Agent: Electroplating Engineers Of Japan Limited

20150137354 - Pillar bump formed using spot-laser: A pillar bump, such as a copper pillar bump, is formed on an integrated circuit chip by applying a metallic powder over a conductive pad on a surface of the chip. The metallic powder is selectively spot-lasered to form the pillar bump. Any remaining unsolidified metallic powder may be removed... Agent:

20150137350 - Semiconductor device and fabricating method thereof: A semiconductor structure includes an oval-shaped pad and a dielectric layer. The oval-shaped pad is on a substrate and includes a major axis corresponding to the largest distance of the oval-shaped pad. The major axis is toward a geometric center of the substrate. The dielectric layer covers the substrate and... Agent: Taiwan Semiconductor Manufacturing Company Ltd.

20150137349 - Semiconductor device and manufacturing method thereof: A semiconductor device includes a substrate including a surface, a plurality of pads disposing on the surface of the substrate, the plurality of pads includes a non-solder mask defined (NSMD) pad and a solder mask defined (SMD) pad, and the NSMD pad is arranged at a predetermined location. Further, a... Agent: Taiwan Semiconductor Manufacturing Company Ltd.

20150137351 - Semiconductor device and manufacturing method thereof: A semiconductor device includes a die, a conductive post disposed adjacent to the die, and a molding surrounding the conductive post and the die, the molding includes a protruded portion protruded from a sidewall of the conductive post and disposed on a top surface of the conductive post. Further, a... Agent: Taiwan Semiconductor Manufacturing Company Ltd.

20150137355 - Semiconductor device and manufacturing method thereof: A semiconductor device includes a first substrate including a surface, and a pad array on the surface of the substrate, wherein the pad array comprises a first type pad and a second type pad located on a same level. The semiconductor device further includes a conductive bump connecting either the... Agent: Taiwan Semiconductor Manufacturing Company Ltd.

20150137357 - Semiconductor device and semiconductor device production method: An inventive semiconductor device includes: a first semiconductor chip; a second semiconductor chip having a front surface opposed to a front surface of the first semiconductor chip; a first electrode region including a first electrode provided between the first semiconductor chip and the second semiconductor chip to electrically connect the... Agent: Rohm Co., Ltd.

20150137358 - Semiconductor device and semiconductor device production method: A semiconductor device according to the present invention includes: a combination object; and a chip having a front surface opposed to a front surface of the combination object. The chip includes: a multi-level wiring structure provided in the front surface of the chip; a connection electrode provided in the multi-level... Agent: Rohm Co., Ltd.

20150137361 - Through silicon via structure and method: A system and method for manufacturing a through silicon via is disclosed. An embodiment comprises forming a through silicon via with a liner protruding from a substrate. A passivation layer is formed over the substrate and the through silicon via, and the passivation layer and liner are recessed from the... Agent:

20150137360 - Tsv structures and methods for forming the same: A device includes a substrate having a front side and a backside, a through-via extending from the backside to the front side of the substrate, and a conductive pad on the backside of the substrate and over the through-via. The conductive pad has a substantially planar top surface. A conductive... Agent:

20150137353 - Under-bump metal structures for interconnecting semiconductor dies or packages and associated systems and methods: The present technology is directed to manufacturing semiconductor dies with under-bump metal (UBM) structures for die-to-die and/or package-to-package interconnects or other types of interconnects. In one embodiment, a method for forming under-bump metal (UBM) structures on a semiconductor die comprises constructing a UBM pillar by plating a first material onto... Agent: Micron Technology, Inc.

20150137364 - Microelectronic devices, stacked microelectronic devices, and methods for manufacturing microelectronic devices: Microelectronic devices, stacked microelectronic devices, and methods for manufacturing microelectronic devices are described herein. In one embodiment, a set of stacked microelectronic devices includes (a) a first microelectronic die having a first side and a second side opposite the first side, (b) a first substrate attached to the first side... Agent:

20150137366 - Reactive bonding of a flip chip package: An array of bonding pads including a set of reactive materials is provided on a first substrate. The set of reactive materials is selected to be capable of ignition by magnetic heating induced by time-dependent magnetic field. The magnetic heating can be eddy current heating, hysteresis heating, and/or heating by... Agent:

20150137362 - Reworkable epoxy resin and curative blend for low thermal expansion applications: A curable composition including: an epoxy resin; and an amine curing component including: an aromatic amine curing agent; and a solubilizer including an aliphatic amine, a cycloaliphatic amine, a non-volatile primary alcohol, non-volatile solvent or a mixture thereof. An electronic assembly including: a substrate; an underfill including a cured product... Agent:

20150137363 - Semiconductor device and semiconductor package: A semiconductor device includes a substrate, a sealing portion, a controller, a semiconductor chip, and a plurality of differential signal balls. The substrate has a first surface and a second surface positioned on a side opposite to the first surface. The sealing portion is formed on the first surface of... Agent: Kabushiki Kaisha Toshiba

20150137365 - Semiconductor device assembly with through-package interconnect and associated systems, devices and methods: Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a spacer material on an encapsulant such that the encapsulant separates the spacer material from an active surface of a semiconductor device and at least one interconnect projecting away from the... Agent: Micron Technology, Inc.

20150137368 - Landing structure for through-silicon via: Embodiments of the present disclosure describe techniques and configurations associated with forming a landing structure for a through-silicon via (TSV) using interconnect structures of interconnect layers. In one embodiment, an apparatus includes a semiconductor substrate having a first surface and a second surface opposite to the first surface, a device... Agent:

20150137367 - Method for forming transparent electrode and semiconductor device manufactured using same: Provided are a method for forming a transparent electrode and a semiconductor device where the transparent electrode is formed by using the method. The method for forming a transparent electrode includes: forming a transparent electrode by using a transparent material of which resistance state is to be changed from a... Agent:

20150137369 - Method of optical proximity correction for modifying line patterns and integrated circuits with line patterns modified by the same: A method of optical proximity correction executed by a computer system for modifying line patterns includes the following steps. First, providing an integrated circuit layout with parallel line patterns and interconnect patterns disposed corresponding to the parallel line patterns. Then, using the computer to modify the integrated circuit layout based... Agent:

20150137370 - Electrically conductive device and manufacturing method thereof: An electrically conductive device and a manufacturing method thereof are provided. According to an exemplary embodiment, an electrically conductive device includes a graphene layer on a substrate, a protein tube portion on the graphene layer, and a conductor penetrating through the protein tube potion to the graphene layer, wherein the... Agent:

20150137371 - Nanoscale interconnects fabricated by electrical field directed assembly of nanoelements: The invention provides a fast, scalable, room temperature process for fabricating metallic nanorods from nanoparticles or fabricating metallic or semiconducting nanorods from carbon nanotubes suspended in an aqueous solution. The assembled nanorods are suitable for use as nanoscale interconnects in CMOS-based devices and sensors. Metallic nanoparticles or carbon nanotubes are... Agent:

20150137374 - Copper wire and dielectric with air gaps: Approaches for fabricating copper wires in integrated circuits are provided. A method of manufacturing a semiconductor structure includes forming a wire opening in a mask. The method also includes electroplating a conductive material in the wire opening. The method additionally includes forming a cap layer on the conductive material. The... Agent: International Business Machines Corporation

20150137375 - Copper wire and dielectric with air gaps: Approaches for fabricating copper wires in integrated circuits are provided. A method of manufacturing a semiconductor structure includes forming a wire opening in a mask. The method also includes electroplating a conductive material in the wire opening. The method additionally includes forming a cap layer on the conductive material. The... Agent:

20150137373 - Integrated circuits and methods for fabricating integrated circuits with improved contact structures: Integrated circuits with improved contact structures and methods for fabricating integrated circuits with improved contact structures are provided. In an exemplary embodiment, a method for fabricating integrated circuits includes providing a device in and/or on a semiconductor substrate. Further, the method includes forming a contact structure in electrical contact with... Agent: Globalfoundries, Inc.

20150137372 - Self forming barrier layer and method of forming: Methods for forming a self-forming barrier layer and the resulting devices are disclosed. Embodiments may include forming a metal line above a substrate, forming a reagent layer above the metal line and the substrate, forming a dielectric layer on the reagent layer, and transforming the reagent layer into a self-forming... Agent: Globalfoundries Inc.

20150137376 - Semiconductor structure and semiconductor fabricating process for the same: A semiconductor structure and a fabricating process for the same are provided. The semiconductor fabricating process includes providing a first dielectric layer, a transitional layer formed on the first dielectric layer, and a conductive fill penetrated through the transitional layer and into the first dielectric layer; removing the transitional layer;... Agent:

20150137377 - Graphene and metal interconnects with reduced contact resistance: A structure including a first metal line in a first interconnect level, the first metal line comprising one or more graphene portions, a second metal line in a second interconnect level above the first interconnect level, the second metal line comprising one or more graphene portions, and a metal via... Agent:

20150137380 - Electronic device incorporating a randomized interconnection layer: An electronic device incorporating a randomized interconnection layer. In one example, the device includes a randomized interconnection layer having a randomized conductive pattern formed by etching of a heterogeneous layer; and a sensing circuit, electrically coupled to the randomized interconnection layer to detect the randomized conductive pattern. In another example,... Agent: Nxp B.v.

20150137379 - Fan out package structure and methods of forming: An embodiment is a structure comprising a die having a pad on a surface and an encapsulant at least laterally encapsulating the die. The pad is exposed through the encapsulant. The structure further includes a first dielectric layer over the encapsulant and the die, a first conductive pattern over the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20150137381 - Optically-masked microelectronic packages and methods for the fabrication thereof: Microelectronic packages and methods for fabricating microelectronic packages having optical mask layers are provided. In one embodiment, the method includes building redistribution layers over the frontside of a semiconductor die. The redistribution layers includes a body of dielectric material in which a plurality of interconnect lines are formed. An optical... Agent:

20150137378 - Semiconductor device having voids and method of forming same: A method embodiment includes forming a hard mask over a dielectric layer and forming a first metal line and a second metal line extending through the hard mask into the dielectric layer. The method further includes removing the hard mask, wherein removing the hard mask defines an opening between the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20150137387 - Integrated circuit device including through-silicon via structure and method of manufacturing the same: An integrated circuit (IC) device includes a semiconductor substrate having a via hole extending through at least a part thereof, a conductive structure in the via hole, a conductive barrier layer adjacent the conductive structure; and a via insulating layer interposed between the semiconductor substrate and the conductive barrier layer.... Agent:

20150137385 - Integrated circuits with close electrical contacts and methods for fabricating the same: Integrated circuits with close electrical contacts and methods for fabricating such integrated circuits are provided. The method includes forming a first and a second contact in an interlayer dielectric, and forming a recess between the first and second contact. A etch mask is formed overlying the interlayer dielectric, and the... Agent: Globalfoundries, Inc.

20150137382 - Self-alignment for redistribution layer: An apparatus comprising a substrate with multiple electronic devices. An interconnect structure formed on a first side of the substrate interconnects the electronic devices. Dummy TSVs each extend through the substrate and form an alignment mark on a second side of the substrate. Functional TSVs each extend through the substrate... Agent:

20150137386 - Semiconductor device: There is provided a semiconductor device which includes a plurality of first through-substrate vias that are used to supply power from a first power supply and that penetrate through a substrate structure, and a plurality of second through-substrate vias that are used to supply power from a second power supply... Agent: Ps4 Luxco S.a.r.l.

20150137388 - Semiconductor devices: A semiconductor device includes a first low-k dielectric layer structure including at least one first low-k dielectric layer sequentially stacked on a substrate, a via structure extending through at least a portion of the substrate and the first low-k dielectric layer structure, and a first blocking layer pattern structure spaced... Agent:

20150137384 - Semicondutor device with through-silicon via-less deep wells: Methods and systems for a semiconductor device with through-silicon via-less deep wells are disclosed and may include forming a mask pattern on a silicon carrier, etching wells in the silicon carrier, and forming metal contacts in the etched wells, wherein the metal contacts comprise a plurality of deposited metal layers.... Agent: Amkor Technology, Inc.

20150137383 - Thin substrate and mold compound handling using an electrostatic-chucking carrier: Thin substrates and mold compound handling is described using an electrostatic-chucking carrier. In one example, a first part of a plurality of silicon chip packages is formed on a front side of a silicon substrate wafer at a first processing station. An a carrier wafer of an electrostatic chuck is... Agent:

20150137389 - Semiconductor package: An embodiment includes a semiconductor package comprising: a substrate; a semiconductor chip package unit disposed on the substrate, the semiconductor chip package unit comprising: a first semiconductor chip; a first encapsulating material layer encapsulating the first semiconductor chip; a plurality of connection pads formed on an upper surface of the... Agent:

20150137390 - Aluminum coated copper ribbon: A ribbon, preferably a bonding ribbon for bonding in microelectronics, contains a first layer containing copper, a coating layer containing aluminum superimposed over the first layer, and an intermediate layer. In a cross-sectional view of the ribbon, the area share of the first layer is from 50 to 96% and... Agent:

20150137391 - Electronic component having a corrosion-protected bonding connection and method for producing the component: The invention relates to an electronic component (1) having a corrosion-protected bonding connection and a method for producing said component. For this purpose the electronic component (1) has at least one semiconductor chip (3) on a substrate (4). Moreover, a bonding connection at risk of corrosion is provided on the... Agent: Robert Bosch Gmbh

  
  
  
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