|Active solid-state devices (e.g., transistors, solid-state diodes) patents - Monitor Patents|
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Active solid-state devices (e.g., transistors, solid-state diodes)Below are recently published patent applications awaiting approval from the USPTO. Recent week's RSS XML file available below.
Listing for abstract view: USPTO application #, Title, Abstract excerpt,Patent Agent. Listing format for list view: USPTO National Class full category number, title of the patent application. 04/30/2015 > 266 patent applications in 109 patent subcategories.
20150115215 - Phase change memory and method of fabricating same: A phase change memory (“PCM”) cell is provided in accordance with some embodiments. The PCM includes a spacer defining a reaction area; a phase change material layer disposed within the reaction area; a protection layer disposed over the phase change material layer and within the reaction area defined by the... Agent:
20150115216 - Conversion of thin transistor elements from silicon to silicon germanium: Embodiments of the present disclosure provide techniques and configurations associated with conversion of thin transistor elements from silicon (Si) to silicon germanium (SiGe). In one embodiment, a method includes providing a semiconductor substrate having a channel body of a transistor device disposed on the semiconductor substrate, the channel body comprising... Agent:
20150115220 - (al, in, ga, b)n device structures on a patterned substrate: A nitride light emitting diode comprising at least one nitride-based active region formed on or above a patterned substrate, wherein the active region is comprised of at least one quantum well structure; and a nitride interlayer, formed on or above the active region, having at least two periods of alternating... Agent: The Regents Of The University Of California
20150115221 - Efficient light extraction from weakly-coupled dielectric buttes: A light emitting diode (LED) with weakly-coupled dielectric buttes deposited along the surface is disclosed. The buttes improve light extraction from a distributed volume of incoherent sources in a high-index substrate, as well as from light backscattered by a rear metallic contact. A lattice arrangement for the buttes maximizes area... Agent:
20150115218 - Optoelectronic module and method for manufacturing the same: An optoelectronic module includes a substrate, an LED and a laser LED formed on the substrate, simultaneously. A method for manufacturing an optoelectronic module includes following steps: providing a sapphire substrate, and forming two adoped GaN layers, an N-type GaN layer, an active layer and a P-type GaN layer on... Agent:
20150115217 - Organic light emitting display apparatus: An organic light emitting display apparatus including a substrate including a plurality of pixel areas; a pixel electrode on the substrate; an opposite electrode on the pixel electrode, the opposite electrode transmitting light; an organic light emitting layer between the pixel electrode and the opposite electrode, the organic light emitting... Agent:
20150115219 - Superluminescent diode and method for implementing the same: A superluminescent diode and a method for implementing the same, wherein the method includes growing a first epi layer on top of an SI (semi-insulating substrate); re-growing a butt based on the first epi layer; forming a tapered SSC (spot size converter) on the re-grown butt layer; forming an optical... Agent: Electronics And Telecommunications Research Institute
20150115222 - Semiconductor device: A semiconductor device includes a semiconductor layer laminate in which a plurality of semiconductor layers are laminated, the semiconductor layer laminate including a light receiving layer, the light receiving layer being grown by a metal-organic vapor phase epitaxy method, the light receiving layer having a cutoff wavelength of more than... Agent:
20150115223 - Semiconductor device and method of manufacturing the same: Disclosed are semiconductor devices and methods of manufacturing the same. The semiconductor device includes: a first conductive type semiconductor layer including a first lower conductive type semiconductor layer and a first upper conductive type semiconductor layer; a V-pit passing through at least one portion of the first upper conductive type... Agent:
20150115238 - Array of several organic semiconductor components and method for the production thereof: The invention relates to an array of several semiconductor components (20, 30), comprising a layer array (40) having a first and a second semiconductor component (20, 30), each being formed in an electrode layer (34) having a drain and a source electrode (22, 23, 32, 33), a gate electrode (21,... Agent:
20150115232 - Chrysene-based compound and organic light-emitting device including the same: A chrysene-based compound and an organic light-emitting device including the same, the chrysene-based compound being represented by Formula 1, below:... Agent: Samsung Display Co., Ltd.
20150115248 - Display device: A display device includes a display panel configured to display an image, and a protection film coupled to a lower portion of the display panel. The protection film includes a support film contacting the display panel and a stress control layer below the support film, and the stress control layer... Agent:
20150115251 - Display device and electronic apparatus: Provided is a display device, including: a first electrode; an organic layer that is provided on the first electrode and includes a light-emission layer; and a second electrode that includes a first conductive film and a second conductive film, the first conductive film and the second conductive film being laminated... Agent:
20150115254 - Display device integrated with touch screen panel: A display device integrated with a touch screen panel may include a display device and an anti-reflection layer. The display device may include a plurality pixels arranged therein. The anti-reflection layer may include a plurality of metal layers and a plurality of dielectric layers that are sequentially laminated on an... Agent:
20150115239 - Electronic devices: The application relates to an electronic device comprising anode, cathode, at least one emitting layer between anode and cathode, at least one p-doped layer A which comprises a monotriarylamine as host, and at least one layer B comprising a monotriarylamine. The invention furthermore relates to a p-doped mixture comprising a... Agent:
20150115227 - Fiber-based organic electrochemical transistor: An organic electrochemical transistor (OECT) that may be used as a biosensor is built up by layers applied to a monofilament. A first conducting layer applied to the monofilament includes generally cylindrical source and drain contacts with a gap therebetween. An electro-active layer of an organic material altering its electrical... Agent: The Hong Kong Polytechnic University
20150115247 - Film-forming composition: This film-forming composition includes, for example, a polymer, crosslinking agent and light-diffusing agent that contain a triazine ring-containing repeating unit structure such as that represented formula (17), and is able to provide cured films with good light diffusing properties. Furthermore, this film-forming composition, which includes the same polymer, crosslinking agent... Agent: Nissan Chemical Industries, Ltd.
20150115229 - Flexible display apparatus: A flexible display apparatus includes a flexible display panel and a window cover coupled onto the flexible display panel. The flexible display panel includes a view area and a non-display area outside the view area. The view area includes an active area configured to display images, and an area outside... Agent: Samsung Display Co., Ltd.
20150115228 - Light emitting device: A light emitting device is disclosed, including a first electrode layer, an organic light emitting layer disposed on the first electrode layer, and a second electrode layer disposed on the organic light emitting layer. The organic light emitting layer is sandwiched between the first electrode layer and the second electrode... Agent: Industrial Technology Research Institute
20150115249 - Light emitting device: A light emitting device is disclosed, including a first electrode layer, a second electrode layer, and an organic light emitting layer sandwiched between the first and second electrode layers. The second electrode layer is patterned to form a plurality of electrode patterns arranged with different densities. The organic light emitting... Agent:
20150115237 - Light-emitting component arrangement: A light-emitting component arrangement may include at least one flexible printed circuit board, at least one light-emitting component coupled to the flexible printed circuit board, at least one electromechanical connecting part, wherein the connecting part is mechanically fixed to the flexible printed circuit board and is electrically coupled to the... Agent: Osram Oled Gmbh
20150115224 - Oled device and corresponding display apparatus: The present invention relates to an OLED device and a corresponding display apparatus, which includes a metal cathode; an organic emitter layer which is disposed on the metal cathode; a transparent cathode which is disposed on the organic emitter layer; and a reflective layer which is disposed between the metal... Agent:
20150115226 - Optoelectronic component, a method for manufacturing an optoelectronic component, and a method for processing a carrier: According to various embodiments, an optoelectronic component may be provided, the optoelectronic component including: an electrode structure disposed at least one of over and in a carrier; and a grating structure disposed over the electrode structure, the grating structure including at least a first region and a second region, wherein... Agent: Infineon Technologies Dresden Gmbh
20150115242 - Organic el lighting panel substrate, organic el lighting panel, and organic el lighting device: Disclosed is an organic EL lighting panel substrate that can improve the uniformity in luminance and chromaticity in an. organic EL lighting panel plane and can suppress deterioration in reliability due to disconnection and the like caused, by art auxiliary electrode. The organic EL lighting panel substrate (10) includes: a... Agent:
20150115225 - Organic electroluminescence device: An organic electroluminescence device includes: a cathode; an anode; and an organic thin-film layer disposed between the cathode and the anode, the organic thin-film layer having one or more layers including an emitting layer, in which the emitting layer includes a first material represented by the following formula (1) and... Agent: Idemitsu Kosan Co., Ltd.
20150115240 - Organic electroluminescent element: Provided is a practically useful organic electroluminescent device (organic EL device) having high efficiency and high driving stability while being capable of being driven at a low voltage. The organic electroluminescent device includes a light-emitting layer between an anode and a cathode opposite to each other. The light-emitting layer contains... Agent:
20150115250 - Organic electroluminescent materials and devices: Fluorine substituted metal complexes as efficient phosphorescent emitters is disclosed. The fluorine substitution is at para position of a phenyl group.... Agent:
20150115245 - Organic light emitting device and method: An organic light-emitting device comprising: an anode; a cathode; a first light-emitting layer between the anode and the cathode, the first light-emitting layer comprising a fluorescent light-emitting material having a triplet excited state energy level T1F and a triplet-triplet annihilation (TTA) promoter having a triplet excited state energy level T1T... Agent:
20150115244 - Organic light emitting diode: The present specification discloses an organic electroluminescent device including: an anode; a cathode; a light emitting layer provided between the anode and the cathode; a first organic material layer associated with the anode and doped with a p-type dopant; and a second organic material layer associated with the cathode and... Agent:
20150115235 - Organic light emitting display and method of fabricating the same: The present disclosure provides an organic light emitting display that may comprise: an organic light emitting device (OLED) including a first electrode, an organic layer including a light-emitting layer, and a second electrode, which are sequentially formed on a substrate having a Thin Film Transistor (TFT) formed on the substrate;... Agent:
20150115234 - Organic light emitting display apparatuses and methods of manufacturing organic light emitting display apparatuses: An organic light emitting display apparatus includes a first substrate, a second substrate, an organic light emitting device, a thin film transistor, a wiring pattern and a seal. The first substrate includes a first region, a second region and a third region. The third region surrounds the first region. The... Agent:
20150115253 - Organic light emitting display device and method for manufacturing the same: The organic light emitting display device includes a flexible substrate, a thin-film transistor on the flexible substrate, a first anode on the thin-film transistor, a second anode on the same plane with the first anode and spaced apart from the first anode so as to surround the first anode, an... Agent:
20150115231 - Organic light-emitting device: An organic light-emitting device having a resonance structure includes a substrate; a first electrode and a second electrode on the substrate and facing each other; an emission layer between the first electrode and the second electrode; a first hole transport layer between the first electrode and the emission layer; and... Agent: Samsung Display Co., Ltd.
20150115233 - Organic light-emitting device and method of manufacturing the same: Disclosed is an organic light-emitting device. The organic light-emitting device includes a first pixel electrode that is disposed on a substrate, a first conductive film that is formed on the substrate to cover the first pixel electrode, a second conductive pattern and an insulating layer that are sequentially formed on... Agent: Samsung Display Co., Ltd.
20150115256 - Organic light-emitting diode (oled) display: An organic light-emitting diode (OLED) display is disclosed. In one aspect, the OLED display includes a thin film transistor comprising an active layer, a gate electrode, a source electrode, and a drain electrode. A first insulating layer is formed at least between the active layer and the gate electrode and... Agent:
20150115230 - Organic light-emitting display and methods of manufacturing the same: An organic light-emitting display including a conductive-organic small molecular filling material and methods of manufacturing the same are disclosed. The organic light-emitting display includes a substrate, a display unit disposed on the substrate, a sealing substrate disposed above the display unit, a sealing member that attaches the substrate to the... Agent: Samsung Display Co., Ltd.
20150115236 - Organic light-emitting display apparatus: An organic light-emitting display apparatus includes: a substrate; an organic light-emitting device including a first electrode disposed on the substrate, a second electrode disposed to face the first electrode, and an intermediate layer including an organic emission layer disposed between the first electrode and the second electrode; and a light... Agent:
20150115246 - Organic photonic device: The invention relates to a transparent substrate for an organic light-emitting device comprising an electrode-bearing carrier, said electrode consisting in a multilayer comprising at least, in order starting from the substrate, a first dielectric layer (D1), a first conduction metal layer (M1), a second dielectric layer (D2), a second conduction... Agent: Agc Glass Europe
20150115255 - Resin composition, substrate, method of manufacturing electronic device and electronic devices: Provided are a resin composition and a substrate that are capable of being used for manufacturing an electronic device having excellent light extraction efficiency. The resin composition contains a polymer and a solvent dissolving the polymer. The resin composition is used to form a layer, and when refractive indexes of... Agent: Sumitomo Bakelite Company Limited
20150115243 - Solid-state image pickup device, method of manufacturing the same, and electronic apparatus: A solid-state image pickup device includes: an organic photoelectric conversion layer; a passivation layer formed to cover a top of the organic photoelectric conversion layer; and an insulating film formed on the passivation layer and in a slit produced on a level difference in the passivation layer, the insulating film... Agent:
20150115252 - Thin film transistor substrates, methods of manufacturing the same and display devices including the same: A thin film transistor substrate includes a data line, a gate line, a gate electrode, a source electrode, a first drain electrode, a semiconductor layer and a second drain electrode. The data line and the gate line cross each other on a base substrate. The gate electrode is electrically connected... Agent:
20150115241 - Use of a semiconducting compound in an organic light emitting device: The disclosure relates to xanthene derivatives, and electronic devices including xanthene derivatives. The electronic devices may includes an electron transporting layer or an electron injecting layer, and the electron transporting layer or the electron injecting layer may include one of the xanthene derivative.... Agent:
20150115258 - Array substrate for liquid crystal display device and method of manufacturing the same: An array substrate for a liquid crystal display device includes a substrate; a semiconductor layer on the substrate; a gate electrode on the semiconductor layer; source and drain electrodes on and in contact with the semiconductor layer; and an oxide layer on the gate electrode, the oxide layer including a... Agent:
20150115259 - Display device: A display device having a high aperture ratio and including a capacitor that can increase capacitance is provided. A pair of electrodes of the capacitor is formed using a light-transmitting conductive film. One of the electrodes of the capacitor is formed using a metal oxide film, and the other of... Agent: Semiconductor Energy Laboratory Co., Ltd.
20150115257 - Display device and manufacturing method thereof: A display device and a manufacturing method thereof with improved performance and low manufacturing complexity are provided. One inventive aspect includes: a first control electrode, a semiconductor layer, an etch stop layer, a first input electrode and a first output electrode, a third control electrode, a passivation layer and a... Agent:
20150115265 - Semiconductor device: A semiconductor device including a capacitor with increased charge capacity and having a high aperture ratio and low power consumption is provided for a semiconductor device including a driver circuit. The semiconductor device includes a driver circuit which includes a first transistor including gate electrodes above and below a semiconductor... Agent:
20150115261 - Semiconductor device and manufacturing method of the same: An object is to provide a semiconductor device with high aperture ratio or a manufacturing method thereof. Another object is to provide semiconductor device with low power consumption or a manufacturing method thereof. A light-transmitting conductive layer which functions as a gate electrode, a gate insulating film formed over the... Agent:
20150115263 - Semiconductor device and manufacturing method thereof: Provided are a transistor which has electrical characteristics requisite for its purpose and uses an oxide semiconductor layer and a semiconductor device including the transistor. In the bottom-gate transistor in which at least a gate electrode layer, a gate insulating film, and the semiconductor layer are stacked in this order,... Agent:
20150115262 - Semiconductor device and method for manufacturing the same: To provide a semiconductor device which has transistor characteristics with little variation and includes an oxide semiconductor. The semiconductor device includes an insulating film over a conductive film and an oxide semiconductor film over the insulating film. The oxide semiconductor film includes a first oxide semiconductor layer, a second oxide... Agent:
20150115260 - Stable amorphous metal oxide semiconductor: A thin film semiconductor device has a semiconductor layer including a mixture of an amorphous semiconductor ionic metal oxide and an amorphous insulating covalent metal oxide. A pair of terminals is positioned in communication with the semiconductor layer and define a conductive channel, and a gate terminal is positioned in... Agent:
20150115264 - Thin film transistor and method of manufacturing the same: As source and drain wiring, a base layer and a cap layer are each formed of a MoNiNb alloy film, and a low-resistance layer is formed of Cu. The resultant laminated metal film is patterned through one-time wet etching to form a drain electrode and a source electrode. Cu serving... Agent:
20150115266 - Die crack detector with integrated one-time programmable element: The embodiments described herein provide a die crack detector and method that use a conductive trace arranged to at least substantially extend around a perimeter of an integrated circuit die. A one-time programmable element, such as a fuse, is coupled in series with the conductive trace, and a package lead... Agent: Freescale Semiconductor, Inc.
20150115267 - Planar metrology pad adjacent a set of fins of a fin field effect transistor device: Approaches for providing a substrate having a planar metrology pad adjacent a set of fins of a fin field effect transistor (FinFET) device are disclosed. Specifically, the FinFET device comprises a finned substrate, and a planar metrology pad formed on the substrate adjacent the fins in a metrology measurement area... Agent: Globalfoundries Inc.
20150115268 - Semiconductor apparatus and testing method thereof: A semiconductor apparatus having a through via to be electrically coupled with a chip includes a latch memory cell configured to be electrically coupled with the through via and receive a signal transmitted through the through via, and output a stored signal to the through via.... Agent: Sk Hynix Inc.
20150115269 - Semiconductor device and method for manufacturing semiconductor device: This invention provides a semiconductor device with improved reliability. A semiconductor chip (semiconductor device) includes a plurality of electrode pads arranged in a plurality of lines extending along a side (chip side) of a perimeter of the semiconductor chip in plan view. Among the electrode pads, the areas of respective... Agent:
20150115270 - Encapsulated sensors: An encapsulated sensors and methods of manufacture are disclosed herein. The method includes forming an amorphous or polycrystalline material in contact with a layer of seed material. The method further includes forming an expansion space for the amorphous or polycrystalline material. The method further includes forming an encapsulation structure about... Agent: International Business Machines Corporation
20150115272 - Array substrate and manufacturing method thereof, and display device: Embodiments of the disclosure provide an array substrate and a manufacturing method thereof, and a display device. The array substrate includes a thin film transistor formed on a base substrate, a plurality of strip pixel electrodes connected to a drain electrode of the thin film transistor, and a common electrode... Agent:
20150115273 - Array substrate, method for manufacturing the same and display device: The present invention provides an array substrate, a method for manufacturing the array substrate and a display device, and belongs to a field of display technology. A gate electrode and a gate line of the array substrate are coated with a metal oxide thin film. By applying the technical scheme... Agent: Boe Technology Group Co., Ltd.
20150115274 - Display device: Provided is a display device (1a), including: a substrate on which a plurality of pixels are arranged in a display region; a plurality of connection pads (C) provided on one surface of the substrate; and wires connecting the plurality of pixels and the plurality of connection pads to each other,... Agent: Japan Display Inc.
20150115275 - Display device: A display device includes gate lines, data lines, first wires and second wires extending in the directions of the gate lines and data lines, and pixels having a first subpixel and a second subpixel each. The first subpixel has a first subpixel electrode and a first switching element, and the... Agent:
20150115271 - Display device including electrostatic discharge circuit: The present invention relates to a display device including a static electricity discharge circuit. The display device according to an exemplary embodiment of the present invention includes: a thin film transistor array panel including a display area including a plurality of pixels and a peripheral area around the display area;... Agent: Samsung Display Co., Ltd.
20150115277 - Episubstrates for selective area growth of group iii-v material and a method for fabricating a group iii-v material on a silicon substrate: The embodiments disclose a silicon substrate with a group III-V material and a method for fabricating a group III-V material on a silicon substrate. The method involves providing a silicon substrate. A first layer formed atop the silicon substrate, is subsequently patterned to expose the underlying silicon substrate. A group... Agent: Imec Vzw
20150115278 - Light emitting device, and method for manufacturing thereof: Provided is a light emitting device comprising an optical member provided on a light extracting surface side of a semiconductor light emitting element via a first light transmissive layer, wherein bonding surfaces of the semiconductor light emitting element and the first light transmissive layer are roughened surfaces, bonding surfaces of... Agent:
20150115276 - Light-emitting diode: The disclosure provides a light-emitting diode which includes a first semiconductor layer, a light-emitting layer, a second semiconductor layer, a reflective layer, a current blocking layer and a current spreading layer. The light-emitting layer is positioned on the first semiconductor layer, and the second semiconductor layer is positioned on the... Agent: Lextar Electronics Corporation
20150115279 - Method for controlling concentration of donor in ga2o3-based single crystal: A β-Ga2O3-based single crystal, including a first region that has side and bottom surfaces and is controlled so as to have a first donor concentration; and a second region that surrounds the side and bottom surfaces of the first region and is controlled so as to have a second donor... Agent:
20150115280 - Methods of growing nitride semiconductors and methods of manufacturing nitride semiconductor substrates: Methods of growing nitride semiconductor layers including forming nitride semiconductor dots on a substrate and growing a nitride semiconductor layer on the nitride semiconductor dots. The nitride semiconductor layer may be separated from the substrate to be used as a nitride semiconductor substrate.... Agent:
20150115281 - Semiconductor light-emitting device and method of manufacturing the same: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that... Agent:
20150115289 - Hybrid wide-bandgap semiconductor bipolar switches: A hybrid semiconductor bipolar switch in which a normally-on high-voltage wide-bandgap semiconductor bipolar switch and a normally-off field effect transistor are connected in a cascode (Baliga-pair) configuration. The switch may be constructed as a stacked hybrid device where a discrete transistor is bonded on top of a bipolar switch. Power... Agent:
20150115288 - Power semiconductor module: A power semiconductor module includes a base plate as a metallic heat dissipating body, a first insulating layer on the base plate, and a first wiring pattern on the first insulating layer. On a predetermined region that is a part of the first wiring pattern, a second wiring pattern for... Agent: Mitsubishi Electric Corporation
20150115282 - Semiconductor device: A semiconductor device includes an insulating substrate, a semiconductor element secured to a top surface of the insulating substrate, a case formed of a resin and having a frame portion surrounding the semiconductor element, a metal support located above the insulating substrate and having an end secured to the frame... Agent: Mitsubishi Electric Corporation
20150115285 - Semiconductor device and fabrication method of semiconductor device: P+ type regions and a p-type region are selectively disposed in a surface layer of a silicon carbide substrate base. The P+ type region is disposed in a breakdown voltage structure portion surrounding an active region. The P+ type region is disposed in the active region to make up a... Agent: Fuji Electric Co., Ltd.
20150115284 - Semiconductor device with junction termination extension: A semiconductor device includes a substrate including silicon carbide; a drift layer disposed over the substrate including a drift region doped with a first dopant and conductivity type; and a second region, doped with a second dopant and conductivity type, adjacent to the drift region and proximal to a surface... Agent:
20150115283 - Sic bipolar junction transistor with reduced carrier lifetime in collector and a defect termination layer: A method of manufacturing a silicon carbide (SiC) bipolar junction transistor (BJT) and a SiC BJT (100) are provided. The SiC BJT comprises an emitter region (150), a base region (140) and a collector region (120). The collector region is arranged on a substrate (110) having an off-axis orientation of... Agent: Fairchild Semiconductor Corporation
20150115287 - Silicon carbide semiconductor device and fabrication method of silicon carbide semiconductor device: A P+ type region, a p-type region, and a P− type region are disposed in a surface layer of a silicon carbide substrate base and are disposed in a breakdown voltage structure portion surrounding an active region to make up an element structure of Schottky junction. The p− type region... Agent: Fuji Electric Co., Ltd.
20150115286 - Silicon carbide semiconductor device and method for producing the same: An SiC semiconductor device has a p type region including a low concentration region and a high concentration region filled in a trench formed in a cell region. A p type column is provided by the low concentration region, and a p+ type deep layer is provided by the high... Agent: Denso Corporation
20150115290 - Method of manufacturing structures of leds or solar cells: The invention disclosure relates to a manufacturing method comprising the formation of elemental LED or photovoltaic structures on a first substrate, each comprising at least one p-type layer, an active zone and an n-type layer, formation of a first planar metal layer on the elemental structures, provision of a transfer... Agent:
20150115291 - Image sensors having transfer gate electrodes in trench: Provided is an image sensor including a semiconductor substrate having a trench and having a first conductivity type, a photoelectric conversion layer formed in the semiconductor substrate below the trench to have a second conductivity type, first and second transfer gate electrodes provided in the trench covered with a gate... Agent:
20150115292 - Display apparatus and multi-panel display apparatus: A display apparatus includes a thin film transistor substrate, a gate driver, and a connection line. The thin film transistor substrate includes a display area and a non-display area surrounding the display area. The display area includes gate lines extending along a first direction and data lines extending along a... Agent: Samsung Display Co., Ltd.
20150115295 - Flip-chip light emitting diode and fabrication method: A flip-chip light emitting diode (LED) includes: a substrate having a P-type pad electrode and an N-type pad electrode; a light-emitting epitaxial layer flip-chip mounted over the substrate, including, from top down, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The n-type semiconductor layer is divided... Agent: Xiamen Sanan Optoelectronics Technology Co., Ltd.
20150115293 - Light emitting diode display panel: A light emitting diode (LED) display panel and fabrication method thereof are provided. The LED display panel includes a plurality of dielectric patterns and LED devices, and the dielectric patterns are formed on a substrate subsequent to formation of the LED devices. The dielectric pattern surrounds sidewalls of the corresponding... Agent:
20150115297 - Display device: A display device may include a display panel, a window substrate and a light shielding member. The display panel may include an active area in which pixels are disposed, and a non-active area at the periphery of the active area. The window substrate may be disposed above the display panel,... Agent:
20150115296 - Display device using semiconductor light emitting device: Discussed is a display device including a wiring substrate having a first substrate layer and a second substrate layer, a conductive adhesive layer configured to cover the wiring substrate, and a plurality of semiconductor light emitting devices coupled to the conductive adhesive layer, and electrically connected to a first electrode... Agent: Lg Electronics Inc.
20150115298 - Semiconductor light emitting device: According to one embodiment, the fluorescer layer is provided on the first surface side. The fluorescer layer has a side surface provided at an obtuse angle with respect to the first surface. The fluorescer layer includes a plurality of fluorescers and a binder. The plurality of fluorescers is configured to... Agent: Kabushiki Kaisha Toshiba
20150115299 - Iii-nitride light emitting device: A device includes a substrate (10) and a III-nitride structure (15) grown on the substrate, the III-nitride structure comprising a light emitting layer (16) disposed between an n-type region (14) and a p-type region (18). The substrate is a RAO3 (MO)n where R is one of a trivalent cation: Sc,... Agent: Koninklijke Philips Electronics N.v.
20150115301 - Electrode structure and light emitting diode structure having the same: An electrode structure includes at least one reflection layer, a barrier layer, and a conductive pad. The barrier layer includes a first barrier layer and a second barrier layer. The first and second barrier layers are stacked on the reflection layer in sequence. The first and second barrier layers are... Agent: Lextar Electronics Corporation
20150115303 - Led module with circuit board: The present invention relates to an LED module 10, a circuit board 1, and a method for coating the circuit board 1 that is used in an LED module 10. The circuit board 1 is used particularly for reflecting light emitted by at least one LED chip of the LED... Agent: At&s Austria Techmologie & Systemtechnik Aktiengesellchaft
20150115306 - Light emitting device and light emitting module including a fluorescent material layer: A semiconductor light-emitting device includes a semiconductor light-emitting layer, a pair of electrodes, a fluorescent material layer and a chromaticity adjusting layer. The semiconductor light-emitting layer emits first light. The pair of electrodes is connected to the semiconductor light-emitting layer. The fluorescent material layer covers at least a center portion... Agent:
20150115305 - Optoelectronic component: s
20150115304 - Optoelectronic component and method for producing an optoelectronic component: An optoelectronic component may include a carrier element having a heat sink, at least one semiconductor chip for emitting electromagnetic radiation which is mounted and electrically contact-connected on the carrier element, a radiation-transmissive cover disposed downstream of the at least one semiconductor chip, a converter layer applied on the radiation-transmissive... Agent:
20150115302 - Optoelectronic devices containing a converter carrier layer, and methods of producing an optoelectronic device containing a converter carrier layer: An optoelectronic device includes a layer sequence having an active layer that emits electromagnetic primary radiation, and at least one converter carrier layer arranged in the beam path of the electromagnetic primary radiation. The at least one converter carrier layer includes converter particles and an inorganic-organic hybrid material and/or a... Agent:
20150115307 - Sapphire substrate and method for manufacturing the same and nitride semiconductor light emitting element: A sapphire substrate provided with a plurality of projections on a principal surface on which a nitride semiconductor is grown to form a nitride semiconductor light emitting element, wherein the projection is substantially pyramidal-shaped having a pointed top and constituted by a plurality of side surfaces, wherein the side surface... Agent:
20150115300 - Semiconductor light emitting device: According to one embodiment, the n-side electrode has a corner and a plurality of straight portions. The plurality of straight portions extends in different directions. The corner connects the plurality of straight portions. A first insulating film is provided between the semiconductor layer and the corner of the n-side electrode.... Agent: Kabushiki Kaisha Toshiba
20150115310 - Array substrate for mounting chip and method for manufacturing the same: Provided is an array substrate for mounting a chip. The array substrate includes a plurality of conductive layers unidirectionally stacked with respect to an original chip substrate; a plurality of insulating layers alternately stacked with the plurality of conductive layers, and electrically separate the plurality of conductive layers; and a... Agent:
20150115309 - Light emitting diode structure: A light emitting diode structure includes a substrate, an N-type semiconductor layer, a light emitting layer, a P-type semiconductor layer, a composite conductive layer, a first electrode, and a second electrode. The N-type semiconductor layer is located on the substrate. The light emitting layer is located on a portion of... Agent:
20150115308 - Light-emitting diode package and method for manufacturing the same: The present disclosure provides a light-emitting diode package, including: a carrier; a light-emitting diode chip disposed over the carrier and electrically connected to the carrier, wherein the light-emitting diode chip includes at least two recesses at corners located on a diagonal line of the light-emitting diode chip; a eutectic layer... Agent: Lextar Electronics Corporation
20150115311 - Film-like thermosetting silicone sealing material: The present invention relates to a film-like thermosetting silicone sealing material for sealing a semiconductor element by means of compression molding, the sealing material having an initial torque value of less than 15 dN·m as measured by an MDR (Moving Die Rheometer) at a molding temperature of from room temperature... Agent:
20150115312 - Group iii nitride semiconductor device, and method for fabricating group iii nitride semiconductor device: In a group III nitride semiconductor device according to one aspect of the present invention, in a p-type group III nitride semiconductor region formed on a semi-polar plane substrate, the concentration of hydrogen (H) contained in the p-type group III nitride semiconductor region is 25% or less of the concentration... Agent:
20150115313 - Semiconductor device package: In an embodiment, a semiconductor device package includes a bidirectional switch circuit. The bidirectional switch circuit includes a first semiconductor transistor mounted on a first die pad, a second semiconductor transistor mounted on a second die pad, the second die pad being separate from the first die pad, and a... Agent:
20150115314 - Semiconductor device and manufacturing method of the same: In a semiconductor device, a trench includes a first trench that has an opening portion on a surface of a base layer, and a second trench that is communicated with the first trench and in which a distance between opposed side walls is greater than opposed side walls of the... Agent:
20150115315 - High voltage semiconductor power switching device: A three terminal high voltage Darlington bipolar transistor power switching device includes two high voltage bipolar transistors, with collectors connected together serving as the collector terminal. The base of the first high voltage bipolar transistor serves as the base terminal. The emitter of the first high voltage bipolar transistor connects... Agent: Mosway Semiconductor Limited
20150115316 - Semiconductor device: A semiconductor device includes: a drift layer having a first conduction type; a base layer having a second conduction type and formed on the drift layer; an emitter layer having the first conduction type and formed in a surface layer portion of the base layer; a buffer layer having the... Agent:
20150115317 - Protection devices for precision mixed-signal electronic circuits and methods of forming the same: Apparatus and methods for precision mixed-signal electronic circuit protection are provided. In one embodiment, an apparatus includes a p-well, an n-well, a poly-active diode structure, a p-type active region, and an n-type active region. The poly-active diode structure is formed over the n-well, the p-type active region is formed in... Agent:
20150115318 - Semiconductor photo-detecting device: An ultraviolet (UV) photo-detecting device, including: a first nitride layer; a secondary light absorption layer disposed on the first nitride layer; a primary light absorption layer disposed on the secondary light absorption layer; and a Schottky junction layer disposed on the primary light absorption layer. The secondary light absorption layer... Agent:
20150115319 - Planar avalanche photodiode: An avalanche photodiode includes a first semiconductor layer, a multiplication layer, a charge control layer, a second semiconductor layer, a graded absorption layer, a blocking layer and a second contact layer. The multiplication layer is located between the charge control layer and the first semiconductor layer. The charge control layer... Agent:
20150115320 - Lattice-mismatched semiconductor structures and related methods for device fabrication: Lattice-mismatched materials having configurations that trap defects within sidewall-containing structures.... Agent:
20150115321 - Substrate structure, complementary metal oxide semiconductor device, and method of manufacturing complementary metal oxide semiconductor device: A substrate structure, a complementary metal oxide semiconductor (CMOS) device including the substrate structure, and a method of manufacturing the CMOS device are disclosed, where the substrate structure includes: a substrate, at least one seed layer on the substrate formed of a material including boron (B) and/or phosphorus (P), and... Agent:
20150115322 - Dual epitaxial process for a finfet device: A method includes forming a first fin and a second fin extending above a semiconductor substrate, with a shallow trench isolation (STI) region between them. A space is defined between the first and second fins above a top surface of the STI region. A first height is defined between the... Agent:
20150115323 - Semiconductor device: A semiconductor device including a first nitride semiconductor layer formed over a substrate, a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a band gap wider than that of the first nitride semiconductor layer, a trench penetrating through the second nitride semiconductor layer to reach... Agent:
20150115326 - Electronic device: In an embodiment, an electronic device includes a semiconductor layer having a surface, a gate and a first current electrode on the surface and a dielectric layer extending between the gate and the first current electrode and including charged ions having a predetermined charge profile.... Agent:
20150115327 - Group iii-v device including a buffer termination body: There are disclosed herein various implementations of a III-Nitride device and method for its fabrication. The III-Nitride device includes a III-Nitride buffer layer situated over a substrate, the III-Nitride buffer layer having a first bandgap. In addition, the device includes a III-Nitride heterostructure situated over the III-Nitride buffer layer and... Agent: International Rectifier Corporation
20150115328 - Method of forming a semiconductor structure: A semiconductor structure comprises a first layer. The first layer comprises a first III-V semiconductor material. The semiconductor structure also comprises a second layer over the first layer. The second layer comprises a second III-V semiconductor material different from the first III-V semiconductor material. The semiconductor structure further comprises an... Agent:
20150115325 - Spacer supported lateral channel fet: A semiconductor device includes a semiconductor material and trenches extending into the semiconductor material from a first main surface of the semiconductor material to form mesas of semiconductor material between the trenches. The device also includes a field plate in the trenches, a body region in the mesas, a source... Agent:
20150115324 - Switching circuit: In an embodiment, a switching circuit includes input drain, source and gate nodes, a high voltage depletion mode transistor including a current path coupled in series with a current path of a low voltage enhancement mode transistor, and an overheating detection circuit for detecting overheating of the switching circuit.... Agent:
20150115329 - Method and apparatus for repairing monolithic stacked integrated circuits: Provided is a monolithic stacked integrated circuit (IC). The IC includes a first layer over a substrate and a second layer over the first layer. The first layer includes a first plurality of circuit elements where a first portion of the first plurality of circuit elements has defects. The second... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20150115330 - Image sensor using backside illumination photodiode and method for manufacturing the same: A technology capable of simplifying a process and securing a misalignment margin when bonding two wafers to manufacture an image sensor using backside illumination photodiodes. When manufacturing an image sensor through a 3D CIS (CMOS image sensor) manufacturing process, two wafers, that is, a first wafer and a second wafer... Agent:
20150115331 - Sensor using sensing mechanism having combined static charge and field effect transistor: The present invention relates to a sensor that uses a sensing mechanism having a combined static charge and a field effect transistor, the sensor including: a substrate; source and drain units formed on the substrate and separated from each other; a channel unit interposed between the source and drain units;... Agent:
20150115332 - Cmos image sensor with global shutter, rolling shutter, and a variable conversion gain, having pixels employing several bcmd transistors coupled to a single photodiode and dual gate bcmd transistors for charge storage and sensing: The invention describes image sensor array pixels with global and rolling shutter capabilities that utilize multiple BCMD transistors for storing and sensing charge for a single photodiode. This configuration improves the Dynamic Range (DR) of the sensor, by allowing sensing different image signals from a single pixel without saturation, a... Agent: Semiconductor Components Industries, LLC
20150115333 - Lateral super junctions with high substrate breakdown and build in avalanche clamp diode: This invention discloses configurations and methods to manufacture lateral power device including a super-junction structure with an avalanche clamp diode formed between the drain and the gate. The lateral super-junction structure reduces on-resistance, while the structural enhancements, including an avalanche clamping diode and an N buffer region, increase the breakdown... Agent:
20150115334 - Gate device over strained fin structure: A method for forming a semiconductor device includes forming a fin structure on a substrate, forming a shallow trench isolation region adjacent the fin structure so that an upper portion of the fin structure is exposed, forming a dummy gate over the exposed fin structure, forming an interlayer dielectric layer... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20150115335 - Mechanism for forming metal gate structure: Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a semiconductor substrate. A source region and a drain region are formed in the semiconductor substrate, and metal silicide regions are formed in the source region and the drain region, respectively. The semiconductor device further includes... Agent: Taiwan Semiconductor Manufacturing Co., Ltd
20150115336 - Solid-state imaging device and electronic instrument: Disclosed herein is a solid-state imaging device including, a first semiconductor region of the first conduction type, a photoelectric conversion part having a second semiconductor region of the second conduction type formed in the region separated by the isolation dielectric region of the first semiconductor region, pixel transistors formed in... Agent:
20150115337 - Semiconductor structure and manufacturing method thereof: A semiconductor structure includes a substrate, an imaging pixel array disposed on a first region of the substrate, a first isolation disposed in the first region, a periphery circuitry disposed on a second region of the substrate, and a second isolation disposed in the second region. The imaging pixel array... Agent: Taiwan Semiconductor Manufacturing Company Ltd.
20150115339 - Solid-state imaging device: A solid-state imaging device includes: pixels arranged in a matrix; a vertical signal line provided for each column, conveying a pixel signal; a power line provided for each column, proving a power supply voltage; and a feedback signal line provided for each column, conveying a signal from a peripheral circuit... Agent:
20150115338 - Solid-state imaging device and method for manufacturing solid-state imaging device: A solid-state imaging device according to an embodiment includes photoelectric conversion devices, a dopant layer, a low concentration region, and a transistor. The photoelectric conversion devices are disposed on a semiconductor layer. The dopant layer is disposed on a layer same as the semiconductor layer where photoelectric conversion devices are... Agent: Kabushiki Kaisha Toshiba
20150115340 - Solid-state imaging device, manufacturing method of the same, and electronic apparatus: A solid-state imaging device includes plural photodiodes which are formed in a photodiode area of a unit pixel with no element separating area interposed therebetween and in which impurity concentrations of pn junction areas are different from each other.... Agent:
20150115341 - Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatus: A solid-state imaging device includes, in a semiconductor substrate, a pixel portion provided with a photoelectric conversion portion, which photoelectrically converts incident light to obtain an electric signal and a peripheral circuit portion disposed on the periphery of the pixel portion, wherein a gate insulating film of aMOS transistor in... Agent:
20150115342 - Semiconductor device: Provided is a semiconductor device including a substrate of a first conductivity type, a first circuit region, a separation region, a second circuit region, and a rectifying element. The rectifying element has a second conductivity type layer, a first high concentration second conductivity type region, a second high concentration second... Agent:
20150115343 - Transistor arrangement: A transistor arrangement comprising an electrically conductive substrate; a semiconductor body including a transistor structure, the transistor structure including a source terminal connected to said substrate; a bond pad providing a connection to the transistor structure configured to receive a bond wire; wherein the semiconductor body includes an RF-return current... Agent:
20150115344 - Three dimensional stacked semiconductor structure and method for manufacturing the same: A 3D stacked semiconductor structure is provided, comprising a plurality of stacks formed on a substrate; at least a contact hole formed vertically in one of the stacks; a conductor formed in the contact hole; and a charging trapping layer at least formed at sidewalls of the stacks. One of... Agent: Macronix International Co., Ltd.
20150115345 - Vertical memory devices and methods of manufacturing the same: A vertical memory device includes a channel, a conductive pattern, gate electrodes, a bit line and a conductive line. A plurality of the channels and the conductive patterns extend in a vertical direction from a top surface of a substrate. The gate electrodes surround outer sidewalls of the channels and... Agent:
20150115346 - Semiconductor memory device and method for manufacturing the same: A semiconductor memory device includes a substrate, shallow trench isolations protruding from the substrate, a floating gate formed conformally on the surface of the recess between each shallow trench isolation, a tunnel layer formed between each floating gate and the substrate, a dielectric layer formed conformally on the floating gates,... Agent: United Microelectronics Corp.
20150115347 - Semiconductor device and method for fabricating the same: A semiconductor device and a method of manufacturing the same. The semiconductor device includes a channel, a gate, and a memory layer is interposed between the channel and the gate. The memory layer includes a tunnel insulating layer adjacent to the channel, a charge blocking layer adjacent to the gate,... Agent: Sk Hynix Inc.
20150115348 - Vertical-type nonvolatile memory device and method of manufacturing the same: A vertical-type nonvolatile memory device includes a first vertical channel structure, and first and second stacked structure. The first vertical channel structure extends vertically on a substrate. The first stacked structure includes gate electrodes and first interlayer insulating layers. The gate layers and the first interlayer insulating layers are alternately... Agent:
20150115349 - Methods of fabricating memory devices having charged species and methods of adjusting flatband voltage in such memory devices: Methods for fabricating memory devices having charged species, and methods for adjusting flatband voltages in such memory devices. In one such method, a dielectric material is formed adjacent to a semiconductor. A charged species is introduced into the dielectric material, wherein the charged species has an energy barrier in a... Agent: Micron Technology, Inc.
20150115350 - Three dimensional stacked nonvolatile semiconductor memory: A three dimensional stacked nonvolatile semiconductor memory according to an example of the present invention includes a memory cell array comprised of first and second blocks disposed side by side in a first direction, and a driver disposed on one end of the memory cell array in a second direction... Agent: Kabushiki Kaisha Toshiba
20150115351 - Integrated circuit and method of manufacturing an integrated circuit: An integrated circuit includes a power component including a plurality of first trenches in a cell array and a first conductive material in the first trenches electrically coupled to a gate terminal of the power component, and a diode component including a first diode device trench and a second diode... Agent:
20150115353 - Field effect semiconductor component and method for producing it: What is provided is a field effect component including a semiconductor body, which extends in an edge zone from a rear side as far as a top side and which includes a semiconductor mesa, which extends in a vertical direction, which is perpendicular to the rear side and/or the top... Agent:
20150115352 - Semiconductor device: In such a manner, by minimizing a region in which the shield electrode and the gate electrode overlap, a region that decreases problematic effects, such as leakage current of gate/source or gate/drain of a trench MOS transistor, and a region where high difference of a gate electrode is generated, are... Agent: Magnachip Semiconductor, Ltd.
20150115354 - Semiconductor device: The present disclosure provides a semiconductor device, which includes a compensation area which includes p-regions and n-regions, and a plurality of transistor cells on the compensation area. Each of the plurality of transistor cells includes a source region, a body region, a gate and an interlayer dielectric, and a source... Agent:
20150115355 - Superjunction device and semiconductor structure comprising the same: The present disclosure relates to a superjunction device and a semiconductor structure having the same. The superjunction device includes a body region of a second conduction type, a drain region of a first conduction type, a drift region located between said body region and said drain region. The drift region... Agent:
20150115356 - Method for manufacturing a vertical semiconductor device and vertical semiconductor device: Producing a vertical semiconductor device includes: providing a semiconductor wafer including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type forming a first pn-junction with the first layer, and a third semiconductor layer of the first conductivity type forming a second... Agent:
20150115357 - Semiconductor device: There is provided a semiconductor device. The semiconductor device includes a plurality of trench transistors in an active region, and an interconnection disposed in an edge region, the interconnection configured to transfer a voltage to the plurality of trench transistors, in which the edge region comprises a substrate, a first... Agent: Magnachip Semiconductor, Ltd.
20150115358 - Semiconductor device: The present disclosure provides a semiconductor device, including a compensation area that includes p-regions and n-regions, a plurality of transistor cells including gate electrodes on the compensation area, and one or more interconnections for electrically connecting gate electrodes. The gate electrodes may have a width smaller than ½ of a... Agent:
20150115359 - Semiconductor device: In a semiconductor device, a lightly doped second semiconductor layer of a first conductive type is joined with a heavily doped first semiconductor layer of the first conductive type. A power transistor having a first conductive type channel and a transistor are formed in surface regions of the second semiconductor... Agent: Renesas Electronics Corporation
20150115360 - Semiconductor device and method for manufacturing same: An N type well (NW) is formed over a prescribed depth from a main surface of a semiconductor substrate (SUB), and a P type well (PW) and an N type drain region (ND) are formed in the N type well (NW). An N type source region (NS), an N+ type... Agent:
20150115361 - Lateral diffused metal oxide semiconductor: A lateral diffused N-type metal oxide semiconductor device includes a semiconductor substrate, an epi-layer on the semiconductor substrate, a patterned isolation layer on the epi-layer, a N-type double diffused drain (NDDD) region in a first active region of the patterned isolation layer, a N+ heavily doped drain region disposed in... Agent: Himax Analogic, Inc.
20150115362 - Lateral diffused metal oxide semiconductor: A lateral diffused N-type metal oxide semiconductor device includes a semiconductor substrate, an epi-layer on the semiconductor substrate, a patterned isolation layer on the epi-layer, a N-type double diffused drain (NDDD) region in a first active region of the patterned isolation layer, a N+ heavily doped drain region disposed in... Agent:
20150115363 - Mechanisms for forming finfet device: Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a substrate. The semiconductor device also includes a first fin and a second fin over the substrate. The semiconductor device further includes a first gate electrode and a second gate electrode traversing over the first fin... Agent: Taiwan Semiconductor Manufacturing Co., Ltd
20150115364 - Self-protected metal-oxide-semiconductor field-effect transistor: Device structures, design structures, and fabrication methods for a metal-oxide-semiconductor field-effect transistor. A gate structure is formed on a top surface of a substrate. First and second trenches are formed in the substrate adjacent to a sidewall of the gate structure. The second trench is formed laterally between the first... Agent:
20150115365 - Continuously scalable width and height semiconductor fins: Arbitrarily and continuously scalable on-currents can be provided for fin field effect transistors by providing two independent variables for physical dimensions for semiconductor fins that are employed for the fin field effect transistors. A recessed region is formed on a semiconductor layer over a buried insulator layer. A dielectric cap... Agent:
20150115366 - Circular semiconductor device with electrostatic discharge (esd) device and functional device: One or more semiconductor devices with an electrostatic discharge (ESD) device and a functional device in a circular arrangement are provided herein. The semiconductor device comprises a first circular sector, a second circular sector, and at least two disconnect regions disposed between the first circular sector and the second circular... Agent: Taiwan Semiconductor Manufacturing Company Limited
20150115368 - Semiconductor device and method of fabricating the same: Provided are a semiconductor device and a method of fabricating the same. The semiconductor device may include a plurality of unit cells provided on a semiconductor substrate. Each of the unit cells may include a buried insulating pattern buried in the semiconductor substrate, a first active pattern provided on the... Agent: Samsung Electronics Co., Ltd.
20150115367 - Semiconductor structure and manufacturing method thereof: The present disclosure provides a method of manufacturing a semiconductor structure. The method includes forming a first mask on a substrate; defining a first doped region through an opening of the first mask; forming a second mask on the first mask and filling in the opening of the first mask... Agent: Taiwan Semiconductor Manufacturing Company Ltd.
20150115369 - Co-integration of elemental semiconductor devices and compound semiconductor devices: First and second template epitaxial semiconductor material portions including different semiconductor materials are formed within a dielectric template material layer on a single crystalline substrate. Heteroepitaxy is performed to form first and second epitaxial semiconductor portions on the first and second template epitaxial semiconductor material portions, respectively. At least one... Agent:
20150115371 - Finfet semiconductor structures and methods of fabricating same: The invention provides a method of forming a semiconductor structure, which include: providing an intermediate semiconductor structure having semiconductor substrate, a fin having an EG oxide layer in contact with at least a portion of the fin, and a gate stack disposed over a portion of the fin; forming a... Agent: Globalfoundries Inc.
20150115372 - Metal gate finfet device: A device including a substrate having a fin. A metal gate structure is formed on the fin. The metal gate structure includes a stress metal layer formed on the fin such that the stress metal layer extends to a first height from an STI feature, the first height being greater... Agent:
20150115370 - Semiconductor device providing enhanced fin isolation and related methods: A method for making a semiconductor device may include forming a first semiconductor layer on a substrate comprising a first semiconductor material, forming a second semiconductor layer on the first semiconductor layer comprising a second semiconductor material, and forming mask regions on the second semiconductor layer and etching through the... Agent: Stmicroelectronics, Inc.
20150115373 - Structure and method for providing line end extensions for fin-type active regions: A semiconductor structure includes an isolation feature formed in the semiconductor substrate and a first fin-type active region. The first fin-type active region extends in a first direction. A dummy gate stack is disposed on an end region of the first fin-type active region. The dummy gate stack may overlie... Agent:
20150115374 - Semiconductor structure and method for manufacturing the same: The present invention provides a semiconductor structure comprising a substrate; a gate stack on the substrate; a spacer on the sidewalls of the gate stack; a source/drain junction extension formed in the substrate on both sides of the gate stack by epitaxial growth; and a source/drain region in the substrate... Agent: Institute Of Microelectronics, Chinese Academy Of Sciences
20150115375 - Semiconductor devices and methods of manufacturing the same: A semiconductor device includes a gate insulation layer pattern, a lower gate electrode, an upper gate electrode, and a first inner spacer. The gate insulation layer pattern is formed on a substrate. The lower gate electrode is formed on the gate insulation layer pattern. The upper gate electrode is formed... Agent:
20150115377 - Mems device with integrated temperature stabilization: An apparatus for providing localized heating as well as protection for a vibrating MEMS device. A cap over a MEMS gyroscope includes an embedded temperature sensor and a heater. The temperature sensor is a trace made of a material with a known temperature/resistance coefficient, which loops back along itself to... Agent:
20150115376 - Mems device with outgassing shield: A capped micromachined device has a movable micromachined structure in a first hermetic chamber and one or more interconnections in a second hermetic chamber that is hermetically isolated from the first hermetic chamber, and a barrier layer on its cap where the cap faces the first hermetic chamber, such that... Agent: Analog Devices, Inc.
20150115378 - Method for manufacturing a die assembly having a small thickness and die assembly relating thereto: A method for manufacturing a die assembly, including the steps of: bonding a first wafer of semiconductor material to a second wafer, the second wafer including a respective semiconductor body having a respective initial thickness and forming an integrated electronic circuit; and subsequently reducing the initial thickness of the semiconductor... Agent:
20150115379 - Cobalt (co) and platinum (pt)-based multilayer thin film having inverted structure and method for manufacturing same: The present invention relates to a cobalt (Co) and platinum (Pt)-based multilayer thin film having a novel structure and perpendicular magnetic anisotropy, and to a fabrication method thereof. More specifically, the invention relates to a cobalt and platinum-based multilayer thin film having perpendicular magnetic anisotropy (PMA), which includes thin cobalt... Agent: Sk Hynix Inc.
20150115380 - Magnetic memory device: A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the first vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of... Agent:
20150115381 - Mechanisms for forming radio frequency (rf) area of integrated circuit structure: Embodiments of mechanisms of forming a radio frequency area of an integrated circuit are provided. The radio frequency area of an integrated circuit structure includes a substrate, a buried oxide layer formed over the substrate, and an interface layer formed between the substrate and the buried oxide layer. The radio... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.
20150115382 - Image sensor comprising reflective guide layer and method of forming the same: Various structures of image sensors are disclosed, as well as methods of forming the image sensors. According to an embodiment, a structure comprises a substrate comprising photo diodes, an oxide layer on the substrate, recesses in the oxide layer and corresponding to the photo diodes, a reflective guide material on... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20150115384 - Light receiving device: A light receiving device includes an optical substrate disposed over a light receiving surface. In the optical substrate, a first optical multilayer film is formed on an incident surface, a second optical multilayer film is formed on a surface opposite the incident surface, and a third optical multilayer film is... Agent:
20150115383 - Optical device and solid-state image sensing device: According to one embodiment, an optical device includes a plurality of optical elements arrange in array. At least of the optical elements includes an optical layer constituted by a plurality of patterns. The plurality of patterns are formed by a layered body including metal layers and a dielectric layer interlayered... Agent: Kabushiki Kaisha Toshiba
20150115385 - Solid-state imaging device, manufacturing method thereof, and camera with alternately arranged pixel combinations: A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the... Agent:
20150115387 - Method of manufacturing a device comprising an integrated circuit and photovoltaic cells: According to one embodiment, the present invention relates to a method for manufacturing a photovoltaic device comprising a photovoltaic cell or a plurality of photovoltaic cells (PV cells) connected to an electronic integrated circuit having at least one electrical contact area. A stack comprising the PV cell(s) is produced separately... Agent: Commissariat A L'energie Atomique Et Aux Ene Alt
20150115386 - Semiconductor devices, methods of manufacturing thereof, and image sensor devices: Semiconductor devices, methods of manufacturing thereof, and image sensor devices are disclosed. In some embodiments, a semiconductor device comprises a semiconductor chip comprising an array region, a periphery region, and a through-via disposed therein. The semiconductor device comprises a guard structure disposed in the semiconductor chip between the array region... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20150115388 - Solid-state imaging device and manufacturing method of solid-state imaging device: A solid-state imaging device includes a plurality of photoelectric transducers disposed in an array in a semiconductor layer. Each photoelectric transducer includes a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type. The first and second regions are in direct contact.... Agent:
20150115389 - Semiconductor devices, methods of manufacturing thereof, and image sensor devices: Semiconductor devices, methods of manufacturing thereof, and image sensor devices are disclosed. In some embodiments, a semiconductor device includes a semiconductor chip comprising an array region, a periphery region, and a through-via disposed therein. A guard structure is disposed in the semiconductor chip between the array region and the through-via... Agent:
20150115390 - Transient voltage suppressor and its manufacturing method: A transient voltage suppressor and its manufacturing method are provided, which can easily control voltage withstanding characteristics of a Zener diode by analogizing growth of a buried layer by forming a portion of the buried layer by performing ion implantation on a first epitaxial layer and then forming the other... Agent:
20150115391 - Semiconductor device having a locally reinforced metallization structure and method for manufacturing thereof: A method for forming a semiconductor device includes providing a semiconductor substrate having a first area and a second area. A first metal layer structure is formed which includes at least a first metal portion in the first area and a second metal portion in the second area. A plating... Agent:
20150115393 - Methods of stress balancing in gallium arsenide wafer processing: Systems, apparatuses, and methods related to the design, fabrication, and manufacture of gallium arsenide (GaAs) integrated circuits are disclosed. Copper can be used as the contact material for a GaAs integrated circuit. Metallization of the wafer and through-wafer vias can be achieved through copper plating processes disclosed herein. To avoid... Agent:
20150115392 - Semiconductor device and method for fabricating the same: A semiconductor device includes a bit line disposed over a semiconductor substrate, a supporting film being perpendicular to the bit line, a first storage node contact disposed at a lower part of a region disposed between the bit line and the supporting film, and a second storage node contact having... Agent: Sk Hynix Inc.
20150115394 - Semiconductor device and method of forming a shielding layer between stacked semiconductor die: A semiconductor device has a first semiconductor die with a shielding layer formed over its back surface. The first semiconductor die is mounted to a carrier. A first insulating layer is formed over the shielding layer. A second semiconductor die is mounted over the first semiconductor die separated by the... Agent: Stats Chippac, Ltd.
20150115396 - Insulation structure formed in a semiconductor substrate and method for forming an insulation structure: A method for forming an insulation structure in a semiconductor body includes forming a trench extending from a first surface into a semiconductor body, the trench having a first width in a horizontal direction of the semiconductor body, and forming a void spaced apart from the first surface in a... Agent:
20150115395 - Oxide definition (od) gradient reduced semiconductor device and method of making: A method of reducing an oxide definition (OD) density gradient in an integrated circuit (IC) semiconductor device having a placed layout and a set of design rule checking (DRC) rules associated with the placed layout. The method includes computing OD density in insertion regions from OD density information corresponding to... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20150115397 - Semiconductor device with trench isolation: A semiconductor device includes a semiconductor substrate and a trench isolation. The trench isolation is located in the semiconductor substrate, and includes an epitaxial layer and a dielectric material. The epitaxial layer is in a trench of the semiconductor and is peripherally enclosed thereby, in which the epitaxial layer is... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.
20150115398 - Semiconductor devices and methods of manufacturing the same: A method of manufacturing a semiconductor device may include: forming an interlayer insulating layer having openings on a substrate; forming a metal layer in the openings and on the interlayer insulating layer, the metal layer including a sidewall portion on a sidewall of each of the openings and a bottom... Agent:
20150115399 - Bipolar junction transistors with self-aligned terminals: Device structures, fabrication methods, and design structures for a bipolar junction transistor. A semiconductor material layer is formed on a substrate and a mask layer is formed on the semiconductor material layer. The mask layer is patterned to form a plurality of openings to the semiconductor material layer. After the... Agent:
20150115400 - Self-correcting power grid for semiconductor structures method: Aspects of the present invention relate to a self-correcting power grid for a semiconductor structure and a method of using thereof. Various embodiments include a self-correcting power grid for a semiconductor structure. The power grid may include a plurality of interconnect layers. Each of the plurality of interconnect layers may... Agent: International Business Machines Corporation
20150115401 - Technique for fabrication of microelectronic capacitors and resistors: A sequence of semiconductor processing steps permits formation of both vertical and horizontal nanometer-scale serpentine resistors and parallel plate capacitors within a common structure. The method of fabricating such a structure cleverly takes advantage of a CMP process non-uniformity in which the CMP polish rate of an insulating material varies... Agent:
20150115402 - Inductive capacitive structure and method of making the same: An inductive capacitive structure including a first substrate, a first conductive line over the first substrate, a first shielding layer over the first substrate and a second substrate over the first substrate.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20150115404 - Interconnection between inductor and metal-insulator-metal (mim) capacitor: Embodiments of mechanisms for forming a semiconductor device structure are provided. The semiconductor device structure includes a metal-insulator-metal (MIM) capacitor formed on a substrate. The semiconductor device structure also includes an inductor formed on the MIM capacitor. The semiconductor device structure further includes a via formed between the MIM capacitor... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.
20150115406 - Semiconductor structure: The invention provides a semiconductor structure. The semiconductor structure includes a substrate. A first passivation layer is disposed on the substrate. A conductive pad is disposed on the first passivation layer. A second passivation layer is disposed on the first passivation layer. A passive device is disposed on the conductive... Agent: Mediatek Inc.
20150115403 - Toroid inductor in an integrated device: Some novel features pertain to an integrated device that includes a substrate, a first cavity through the substrate, and a toroid inductor configured around the first cavity of the substrate. The toroid inductor includes a set of windings configured around the first cavity. The set of windings includes a first... Agent: Qualcomm Incorporated
20150115405 - Wireless interconnects in an interposer: Some implementations provide an interposer that includes a substrate, a first passive device in the substrate, and a second passive device. The first passive device includes a first set of through substrate vias (TSVs) in the substrate. The second passive device is configured to wirelessly couple to the first passive... Agent: Qualcomm Incorporated
20150115408 - Enhanced hydrogen barrier encapsulation method for the control of hydrogen induced degradation of ferroelectric capacitors in an f-ram process: An encapsulated ferroelectric capacitor or ferroelectric memory cell includes encapsulation materials adjacent to a ferroelectric capacitor, a ferroelectric oxide (FEO) layer over the encapsulated ferroelectric capacitor, and an FEO encapsulation layer over the ferroelectric oxide to provide protection from hydrogen induced degradation.... Agent:
20150115407 - Isolation device: In one embodiment, an isolation device has a substrate, a metal plate, a conductive layer, first and second isolation layers are disclosed. The conductive layer may be formed within the substrate. The conductive layer may be arranged coupled to the metal plate, so as to receive a capacitively coupled signal... Agent: Avago Technologies GeneralIP(singapore) Pte. Ltd.
20150115409 - Semiconductor arrangement having capacitor separated from active region: A semiconductor arrangement includes an active region including a semiconductor device. The semiconductor arrangement includes a capacitor having a first electrode layer, a second electrode layer, and an insulating layer between the first electrode layer and the second electrode layer. At least three dielectric layers are between a bottom surface... Agent: Taiwan Semiconductor Manufacturing Company Limited
20150115410 - Semiconductor device: A plurality of first wiring layers are arranged on a main surface of a substrate, a first insulating film is arranged on upper faces of the plurality of first wiring layers, a second insulating film is arranged on an upper face of the first insulating film, and a plurality of... Agent: Renesas Electronics Corporation
20150115411 - Semiconductor device and method for producing same: A method of producing a semiconductor device includes forming an insulating film on a substrate on which a semiconductor layer is formed; removing a part of the insulating film by etching to form an opening in the insulating film; supplying steam with a temperature greater than or equal to 200°... Agent: Fujitsu Limited
20150115412 - Semiconductor device and method of producing semiconductor device: A method of producing a semiconductor device, comprising the steps of forming a through hole in a semiconductor substrate having a first main surface, a second main surface opposite to the first main surface, and a first conductive layer disposed on the second main surface so that the through hole... Agent:
20150115413 - Assembly of wafer stacks: A method of forming a wafer stack includes providing a sub-stack comprising a first wafer and a second wafer. The sub-stack includes a first thermally-curable adhesive at an interface between the upper surface of the first wafer and the lower surface of the second wafer. A third wafer is placed... Agent:
20150115414 - Sapphire structure with metal substructure and method for producing the same: A sapphire structure with a metal substructure is disclosed. The sapphire structure with a metal substructure includes a sapphire structure and a metal substructure. The sapphire structure includes a flat surface and a concave portion on the flat surface. The metal substructure in the concave portion is bonded to an... Agent:
20150115415 - Inkjet printing on substrates: Methods, apparatuses and devices relate to inkjet printing a covering layer on at least a first side of a substrate in a peripheral region thereof are discussed.... Agent:
20150115417 - Methods for manufacturing a chip arrangement, methods for manufacturing a chip package, a chip package and chip arrangements: A method for manufacturing a chip arrangement is provided, the method including: forming a hole in a carrier including at least one chip, wherein forming a hole in the carrier includes: selectively removing carrier material, thereby forming a cavity in the carrier, forming passivation material over one or more cavity... Agent:
20150115416 - Silicon-on-plastic semiconductor device and method of making the same: A semiconductor device that does not produce nonlinearities attributed to a high resistivity silicon handle interfaced with a dielectric region of a buried oxide (BOX) layer is disclosed. The semiconductor device includes a semiconductor stack structure with a first surface and a second surface wherein the second surface is on... Agent:
20150115418 - Devices and methods of forming fins at tight fin pitches: Devices and methods for forming semiconductor devices with fins at tight fin pitches are provided. One method includes, for instance: obtaining an intermediate semiconductor device; growing an epi layer over the substrate; forming a doped layer below the epi layer; depositing a first oxide layer on the epi layer; applying... Agent: Globalfoundries Inc.
20150115419 - Semiconductor device including dummy conductive cells: A method is disclosed that includes the operations outlined below. A plurality of dummy conductive cells that provide different densities are formed in a plurality of empty areas in a plurality of metal layers of a semiconductor device according to overlap conditions of the empty areas between each pair of... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.
20150115420 - Sensor die grid array package: A semiconductor sensor die grid array package includes a semiconductor die having an active surface and an opposite backside surface. The active surface has external die connection pads. Conductive runners respectively connect the die connection pads to external connection mounts of the package. An encapsulant covers the semiconductor die. The... Agent:
20150115421 - Method an apparatus for stopping resin bleed and mold flash on integrated circit lead finishes: A method and apparatus of minimizing resin bleed and mold flash on integrated lead finishes by providing groves on the external leads that can control the length of resin bleed.... Agent:
20150115422 - Semiconductor package and method therefor: In one embodiment, an electronic package structure includes a lead having a first width. An electronic chip having a conductive bump on a major surface, the conductive bump has a second width greater than the first width. The conductive bump is attached to the lead such that a portion of... Agent:
20150115424 - Electronic system comprising stacked electronic devices provided with integrated-circuit chips: An electronic system includes a first electronic device (with a first integrated-circuit chip) and a second electronic device (with a second integrated-circuit chip). The second electronic device is stacked above the first electronic device on a same side as the first integrated-circuit chip. Electrical connection elements located around the first... Agent: Stmicroelectronics (grenoble 2) Sas
20150115423 - Semiconductor module for electric power: Included are: the third frame which is electrically connected to the first intermediate frame and is arranged above the first frame; the fourth frame which is electrically connected to the second intermediate frame and is arranged above the second frame; the electric source terminal part which is provided on an... Agent:
20150115425 - Multi-chip stacked package and method for forming the same: The present disclosure relates to a multi-chip stacked package and a method for forming the same. The package comprises a chip carrier and multiple levels of chips, with one or more chips being arranged in each level, wherein one or more levels of chips, except for the topmost chips, have... Agent:
20150115426 - Printed circuit board and manufacturing method thereof and semiconductor pacakge using the same: Provided are a printed circuit board which can be used as a substrate for a package, a method of manufacturing the printed circuit board, and a semiconductor package using the printed circuit board, the printed circuit board including: a first substrate having a first mounting area for mounting a package... Agent:
20150115427 - Package structure and packaging method thereof: A package structure and a packaging method thereof are provided, in which an inductor is integrated into a substrate so as to save a packaging space and thus improve the integration level and packaging effect of the system. The package structure includes a substrate, wherein a first metal enclosing structure... Agent:
20150115428 - Power semiconductor module: A power semiconductor module available under environments of high temperature has enhanced heat resistance of silicone gel filled up in a case. A power semiconductor module comprises a power semiconductor element, an insulating substrate mounted with the power semiconductor element, a resin case containing the power semiconductor element and the... Agent: Fuji Electric Co., Ltd.
20150115429 - Semiconductor package: A semiconductor package with reduced warpage problem is provided, including: a circuit board, having opposing first and second surfaces; a semiconductor chip, formed over a center portion of the first surface of the circuit board, having a first cross sectional dimension; a spacer, formed over a center portion of the... Agent:
20150115430 - Semiconductor package and wiring board having the semiconductor package thereon: A semiconductor package includes a chip, a sealing body covering the chip, and a plurality of external connection terminals connected to the chip. The external connection terminals expose from a surface of the sealing body and are arranged in a grid on the surface of the sealing body. In the... Agent:
20150115434 - Embedded heat spreader for package with multiple microelectronic elements and face-down connection: A microelectronic package includes a substrate, first and second microelectronic elements, and a heat spreader. The substrate has terminals thereon configured for electrical connection with a component external to the package. The first microelectronic element is adjacent the substrate and the second microelectronic element is at least partially overlying the... Agent:
20150115433 - Semiconducor device and method of manufacturing the same: The present invention relates to a method of making a semiconductor device having a chip embedded in a heat spreader and electrically connected to a hybrid substrate. In accordance with a preferred embodiment, the method is characterized by the step of attaching a chip-on-interposer subassembly on a heat spreader using... Agent:
20150115432 - Semiconductor device packages using a thermally enhanced conductive molding compound: A heat transportation mechanism that is thermally conductive, but not electrically conductive, is provided so as to permit transportation of heat generated by a semiconductor device die to the exterior of a semiconductor device package. Embodiments can use a thermally conductive polymer structure, added to the package mold compound, to... Agent:
20150115431 - Thermal energy dissipation using backside thermoelectric devices: Embodiments of the present invention provide a semiconductor structure and method to dissipate heat generated by semiconductor devices by utilizing backside thermoelectric devices. In certain embodiments, the semiconductor structure comprises an electronic device formed on a first side of the semiconductor structure. The semiconductor structure also comprises a thermoelectric cooling... Agent: International Business Machines Corporation
20150115439 - Chip package and method for forming the same: The present disclosure relates to a chip package and a method for forming the same. The chip package comprises a carrier pad, a chip, and a plurality of second conductive bumps, and a molding compound. The carrier pad has a first surface with a plurality of first conductive bumps formed... Agent:
20150115435 - Semiconductor apparatus including through via: A semiconductor apparatus with a through via includes a semiconductor chip and a through via formed by penetrating through the semiconductor chip. The system further includes a first metal layer connected to a portion of the through via at an end of the through via and a second metal layer... Agent: Sk Hynix Inc.
20150115440 - Semiconductor device: A semiconductor device includes multilayer chips in which a first semiconductor chip and a second semiconductor chip are bonded together. A first electrode pad is formed on a principal surface of the first semiconductor chip, and a first bump is formed on the first electrode pad. A second bump is... Agent:
20150115436 - Semiconductor device and method of manufacturing the same: Provided is a method of manufacturing a semiconductor device, the method including forming a via structure through a portion of a substrate; partially removing the substrate to expose a portion of the via structure; forming a protecting layer on the substrate to cover the portion of the via structure exposed... Agent:
20150115438 - Stacked semiconductor package: A semiconductor package comprising: a base substrate; a first semiconductor chip unit attached to the base substrate and including at least one first semiconductor chip; a second semiconductor chip unit stacked on the first semiconductor chip unit and including at least one second semiconductor chip; at least one third semiconductor... Agent:
20150115437 - Universal encapsulation substrate, encapsulation structure and encapsulation method: A universal packaging substrate, comprising a first substrate (102) and a silicon interposer (103), wherein, a plurality of bumps (106) are formed between the upper surface of the first substrate (102) and the lower surface of the silicon interposer (103) and electrically connect the upper surface of the first substrate... Agent:
20150115442 - Redistribution layer and method of forming a redistribution layer: A redistribution layer for a chip is provided, wherein the redistribution layer comprises at least one electrical conductor path connecting two connection points with each other, wherein the at least one electrical conductor path is arranged on a planar supporting layer and wherein the electrical conductor path comprises copper and... Agent: Infineon Technologies Ag
20150115443 - Semiconductor package: There is provided a semiconductor package including a first semiconductor package including a first semiconductor chip and a first substrate on which the first semiconductor chip is mounted and in which a via hole is formed outwardly of the first semiconductor chip, a second semiconductor package including a second semiconductor... Agent: Samsung Electro-mechanics Co., Ltd.
20150115441 - Semiconductor structure and manufacturing method thereof: A semiconductor structure includes a semiconductor substrate and a pad. The pad is on a top surface of the semiconductor substrate. The semiconductor structure further includes a circuit board and a bump. The circuit board has a contact area corresponding to the pad on the top surface of the semiconductor... Agent: Taiwan Semiconductor Manufacturing Company Ltd.
20150115445 - Devices, systems and methods for manufacturing through-substrate vias and front-side structures: Methods of manufacturing semiconductor devices and semiconductor devices with through-substrate vias (TSVs). One embodiment of a method of manufacturing a semiconductor device includes forming an opening through a dielectric structure and at least a portion of a semiconductor substrate, and forming a dielectric liner material having a first portion lining... Agent: Micron Technology, Inc.
20150115444 - Wafer arrangement, a method for testing a wafer, and a method for processing a wafer: According to various embodiments, a wafer arrangement may be provided, the wafer arrangement may include: a wafer including at least one electronic component having at least one electronic contact exposed on a surface of the wafer; an adhesive layer structure disposed over the surface of the wafer, the adhesive layer... Agent: Infineon Technologies Dresden Gmbh
20150115446 - Methods of forming semiconductor devices, including forming a contact including an alkaline earth metal on a semiconductor layer, and related devices: Methods of forming a semiconductor device are provided. A method of forming a semiconductor device may include forming a metal contact that includes a heavy alkaline earth metal on an n-type semiconductor layer. The heavy alkaline earth metal may underlie a metal layer and/or a capping layer. Related semiconductor devices... Agent: Samsung Electronics Co., Ltd.
20150115450 - In-situ formation of silicon and tantalum containing barrier: A method includes forming an opening in a dielectric layer, and forming a silicon rich layer on a surface of the dielectric layer. A portion of the silicon rich layer extends into the opening and contacts the dielectric layer. A tantalum-containing layer is formed over and the contacting the silicon... Agent:
20150115447 - Interconnects for semiconductor devices: A semiconductor substructure with improved performance and a method of forming the same is described. The method includes providing a semiconductor dielectric layer having a recess formed therein; forming an interconnect structure with a metal liner and a conductive fill within the recess; and applying an electron beam treatment to... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.
20150115448 - Method for processing wafer: A method for processing a wafer including a plurality of chips is provided. The method may include: forming a trench in the wafer between the plurality of chips; forming a diffusion barrier layer at least over the sidewalls of the trench; forming encapsulation material over the plurality of chips and... Agent: Infineon Technologies Ag
20150115449 - Semiconductor device having a corrosion-resistant metallization and method for manufacturing thereof: A semiconductor device includes a semiconductor substrate having a first side, a second side opposite the first side, an active area, an outer rim, and an edge termination area arranged between the outer rim and the active area. A metallization structure is arranged on the first side of the semiconductor... Agent:
20150115451 - Method and apparatus for high temperature semiconductor device packages and structures using a low temperature process: A semiconductor device package that incorporates a combination of ceramic, organic, and metallic materials that are coupled using silver is provided. The silver is applied in the form of fine particles under pressure and a low temperature. After application, the silver forms a solid that has a typical melting point... Agent: Freescale Semiconductor, Inc.
20150115452 - Semiconductor device packages and methods of manufacturing the same: Semiconductor device packages and methods of manufacturing the semiconductor device packages are provided. A semiconductor device package may include a bonding layer between a substrate and a semiconductor chip, and the bonding layer may include an intermetallic compound. The intermetallic compound may be a compound of metal and solder material.... Agent:
20150115453 - Bonding method using porosified surfaces for making stacked structures: A bonded device having at least one porosified surface is disclosed. The porosification process introduces nanoporous holes into the microstructure of the bonding surfaces of the devices. The material property of a porosified material is softer as compared to a non-porosified material. For the same bonding conditions, the use of... Agent:
20150115456 - Die up fully molded fan-out wafer level packaging: A method of manufacturing a semiconductor chip comprising placing a plurality of die units each having an active front surface and a back surface facing front surface up on an encapsulant layer, encapsulating the plurality of die units on the active surface of the encapsulant layer with an encapsulant covering... Agent:
20150115454 - Microelectronic packages having layered interconnect structures and methods for the manufacture thereof: Microelectronic packages having layered interconnect structures are provided, as are methods for the fabrication thereof. In one embodiment, the method includes forming a first plurality of interconnect lines in ohmic contact with a first bond pad row provided on a semiconductor. A dielectric layer is deposited over the first plurality... Agent:
20150115457 - Semiconductor device: A semiconductor device, including a substrate having an active region defined therein, a plurality of bit lines extending on the substrate in a first direction, a plurality of interconnection lines extending on the substrate in a second direction, a pad electrically connected to the plurality of interconnection lines and configured... Agent:
20150115455 - Stacked 3d memory: A memory can include a plurality of memory blocks, including a first block and a second block disposed over the first block. An isolation layer is disposed in this structure, between the first and second blocks to isolate the vertical conductors in the memory kernels of the first and second... Agent: Macronix International Co., Ltd.
20150115464 - Chip on package structure and method: A system and method for packaging semiconductor device is provided. An embodiment comprises forming vias over a carrier wafer and attaching a first die over the carrier wafer and between a first two of the vias. A second die is attached over the carrier wafer and between a second two... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20150115470 - Chip on package structure and method: A system and method for packaging semiconductor device is provided. An embodiment comprises forming vias over a carrier wafer and attaching a first die over the carrier wafer and between a first two of the vias. A second die is attached over the carrier wafer and between a second two... Agent:
20150115462 - Integrated circuit device: An integrated circuit device includes a substrate, at least one transistor, at least one metal layer, a conductive pillar, and a connecting structure. The substrate has at least one via passing therethrough. The transistor is at least partially disposed in the substrate. The metal layer is disposed on or above... Agent: Nanya Technology Corporation
20150115459 - Integrated circuit structure with metal cap and methods of fabrication: The present disclosure generally provides for an integrated circuit (IC) structure with a TSV, and methods of manufacturing the IC structure and the TSV. An IC structure according to embodiments of the present invention may include a through-semiconductor via (TSV) embedded within a substrate, the TSV having an axial end;... Agent: International Business Machines Corporat
20150115460 - Integrated circuit structure with through-semiconductor via: The present disclosure generally provides for integrated circuit (IC) structures with through-semiconductor vias (TSV). In an embodiment, an IC structure may include a through-semiconductor via (TSV) embedded in a substrate, the TSV having a cap; a dielectric layer adjacent to the substrate; a metal layer adjacent to the dielectric layer;... Agent: International Business Machines Corporation
20150115467 - Package-on-package device: The inventive concepts provide package-on-package (PoP) devices. In the PoP devices, an interposer substrate and a thermal boundary material layer may be disposed between a lower semiconductor package and an upper semiconductor package to rapidly exhaust heat generated from a lower semiconductor chip included in the lower semiconductor package. The... Agent:
20150115471 - Process to achieve contact protrusion for single damascene via: The present disclosure relates to a method of forming a back-end-of-the-line metal contact that eliminates RC opens caused by metal dishing during chemical mechanical polishing. The method is performed by depositing a sacrificial UV/thermal decomposition layer (UTDL) above an inter-level dielectric (ILD) layer. A metal contact is formed that extend... Agent:
20150115458 - Semiconductor device and method for manufacturing a semiconductor device: A device includes a first semiconductor chip including a first face, wherein a first contact pad is arranged over the first face. The device further includes a second semiconductor chip including a first face, wherein a first contact pad is arranged over the first face, wherein the first semiconductor chip... Agent: Infineon Technologies Ag
20150115465 - Semiconductor device and method of balancing surfaces of an embedded pcb unit with a dummy copper pattern: A semiconductor device has a substrate. A conductive via is formed through the substrate. A plurality of first contact pads is formed over a first surface of the substrate. A plurality of second contact pads is formed over a second surface of the substrate. A dummy pattern is formed over... Agent:
20150115466 - Semiconductor package devices including interposer openings for flowable heat transfer member: A semiconductor package device includes a lower package, an interposer disposed on the lower package and including a ground layer and at least one opening, and an upper package on the interposer. The lower package includes a first package substrate, a first semiconductor chip on the first package substrate, and... Agent:
20150115468 - Semiconductor package having magnetic connection member: Provided is a semiconductor package including a wiring substrate having top and bottom surfaces facing each other. A first semiconductor chip is disposed on the wiring substrate in a flip-chip manner. The first semiconductor chip has a first surface facing the top surface of the wiring substrate and a second... Agent:
20150115461 - Semiconductor structure and method for forming the same: A semiconductor structure and a method for forming the same are provided. The method includes following steps. A first wafer is provided, which includes a first region, a second region, and a first semiconductor device disposed in the first region. No semiconductor device is disposed in the second region. A... Agent: United Microelectronics Corp.
20150115469 - Semiconductor substrate and method for manufacturing the same: A semiconductor substrate and a manufacturing method thereof are provided. The semiconductor substrate includes a dielectric layer, a circuit layer, a first protection layer and a plurality of conductive posts. The dielectric layer has a first surface and a second surface that are opposite to each other. The circuit layer... Agent:
20150115463 - Stacked semiconductor devices: A stacked semiconductor device includes a first and second semiconductor device having a first major surface and a second major surface opposite the first major surface, the first major surface of the first and second semiconductor devices include active circuitry. The first and second semiconductor devices are stacked so that... Agent:
20150115472 - Co-support for xfd packaging: A microelectronic package has a dielectric element with first and second parallel apertures. A first microelectronic element has contacts overlying the first aperture, and a second microelectronic element has contacts overlying the second aperture. The second microelectronic element can overlie a rear face of the first microelectronic element and the... Agent: Invensas Corporation
20150115475 - Device including semiconductor chips and method for producing such device: A device includes a first semiconductor chip including a first face, wherein a first contact pad is arranged over the first face. The device further includes a second semiconductor chip including a first face, wherein a first contact pad is arranged over the first face, wherein the first semiconductor chip... Agent: Infineon Technologies Ag
20150115477 - Flip-chip, face-up and face-down centerbond memory wirebond assemblies: A microelectronic assembly can include a substrate having first and second surfaces and an aperture extending therebetween, the substrate having terminals. The assembly can also include a first microelectronic element having a front surface facing the first surface of the substrate, a second microelectronic element having a front surface facing... Agent:
20150115473 - Heterogeneous channel material integration into wafer: Methods for integrating heterogeneous channel material into a semiconductor device, and semiconductor devices that integrate heterogeneous channel material. A method for fabricating a semiconductor device includes processing a first substrate of a first material at a first thermal budget to fabricate a p-type device. The method further includes coupling a... Agent: Qualcomm Incorporated
20150115476 - Module with stacked package components: A module with stack package components includes: at least a package component in a loader. Moreover, each package components includes at least a chip. Package components stacks in the loader. The package components connect with the loader by metal connecters and wire. These package components are placed to make the... Agent: Innovative Turnkey Solution Corporation
20150115474 - Wirebond recess for stacked die: A first semiconductor device die is provided having a bottom edge incorporating a notch structure that allows sufficient height and width clearance for a wire bond connected to a bond pad on an active surface of a second semiconductor device die upon which the first semiconductor device die is stacked.... Agent:
20150115479 - Semiconductor die laminating device with independent drives: A laminating device (230) and method are disclosed for laminating semiconductor die (220) on substrates on a panel (200) of substrates. The laminating device (230) includes lamination units (234,236,238,240) that operate independently of each other so that a row or column of semiconductor die (220) may be independently laminated onto... Agent: Sandisk Information Technology (shanghai) Co., Ltd.
20150115478 - Semiconductor module: A power module includes: a base plate having a front surface provided with positioning wire bonding portions; an insulating substrate provided with hole portions accommodating the positioning wire bonding portions on a side of a back surface facing the base plate, and fixed to the base plate with being positioned... Agent: Mitsubishi Electric Corporation
20150115480 - Method of manufacturing high resistivity soi wafers with charge trapping layers based on terminated si deposition: A method of preparing a single crystal semiconductor handle wafer in the manufacture of a silicon-on-insulator device is provided. The method comprises forming a multilayer of passivated semiconductors layers on a dielectric layer of a high resistivity single crystal semiconductor handle wafer. The method additionally comprises forming a semiconductor oxide... Agent:Previous industry: Fences
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