|Active solid-state devices (e.g., transistors, solid-state diodes) patents - Monitor Patents|
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Active solid-state devices (e.g., transistors, solid-state diodes)Below are recently published patent applications awaiting approval from the USPTO. Recent week's RSS XML file available below.
Listing for abstract view: USPTO application #, Title, Abstract excerpt,Patent Agent. Listing format for list view: USPTO National Class full category number, title of the patent application. 05/09/2013 > 190 patent applications in 81 patent subcategories.
20130112933 - Germanium antimony telluride materials and devices incorporating same: A chalcogenide alloy composition, having an atomic composition comprising from 34 to 45 Ge, from 2 to 16% Sb, from 48 to 55% Te, from 3 to 15% carbon and from 1 to 10% nitrogen, wherein all atomic percentages of all components of the film total to 100 atomic %.... Agent: Advanced Technology Materials, Inc.
20130112934 - Nanoscale switching device: A nanoscale switching device has an active region disposed between two electrodes of nanoscale widths. The active region contains a switching material that carries mobile ionic dopants capable of being transported over the active region under an electric field to change a resistive state of the device. The switching material... Agent:
20130112935 - Nonvolatile memory element, nonvolatile memory device, and manufacturing method for the same: A nonvolatile memory element according to the present invention includes a first metal line; a plug formed on the first metal line and connected to the first metal line; a stacked structure including a first electrode, a second electrode, and a variable resistance layer, the stacked structure being formed on... Agent:
20130112936 - Resistance change element and manufacturing method therefor: A variable resistance element including: a first electrode; a second electrode; and a variable resistance layer having a resistance value which reversibly changes according to electrical signals applied, wherein the variable resistance layer includes a first variable resistance layer comprising a first oxygen-deficient transition metal oxide, and a second variable... Agent: Panasonic Corporation
20130112937 - Nanowire field effect transistor device: A method for forming a field effect transistor device includes forming a nanowire suspended above a substrate, forming a dummy gate stack on a portion of the substrate and around a portion of the nanowire, removing exposed portions of the nanowire, epitaxially growing nanowire extension portions from exposed portions of... Agent: International Business Machines Corporation
20130112938 - Nanowire field effect transistor device: A field effect transistor device includes a nanowire, a gate stack comprising a gate dielectric layer disposed on the nanowire, a gate conductor layer disposed on the dielectric layer and a substrate, and an active region including a sidewall contact portion disposed on the substrate adjacent to the gate stack,... Agent: International Business Machines Corporation
20130112942 - Composite having semiconductor structures embedded in a matrix: Composites having semiconductor structures embedded in a matrix are described. In an example, a composite includes a matrix material. A plurality of semiconductor structures is embedded in the matrix material. Each semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material and having an aspect ratio between,... Agent:
20130112944 - Nanorod light emitting device and method of manufacturing the same: A nanorod light emitting device includes at least one nitride semiconductor layer, a mask layer, multiple light emitting nanorods, nanoclusters, a filling layer disposed on the nanoclusters, a first electrode and connection parts. The mask layer is disposed on the nitride semiconductor layer and has through holes. The light emitting... Agent: Samsung Electronics Co., Ltd.
20130112945 - Nanowire-based optoelectronic device for light emission: n
20130112939 - New iii-nitride growth method on silicon substrate: A circuit structure includes a substrate and a patterned dielectric layer over the substrate. The patterned dielectric layer includes a plurality of vias; and a number of group-III group-V (III-V) compound semiconductor layer. The III-V compound semiconductor layers include a first layer in the vias, a second layer over the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20130112943 - Semiconductor light emitting device: According to one embodiment, in a semiconductor light emitting device, a light emitting layer is partially provided on a first semiconductor layer of a first conductivity type, and has a multiple quantum well structure made by alternately laminating well layers having a first impurity concentration of the first conductivity type... Agent: Kabushiki Kaisha Toshiba
20130112940 - Semiconductor structure having nanocrystalline core and nanocrystalline shell: Semiconductor structures having a nanocrystalline core and corresponding nanocrystalline shell are described. In an example, a semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material and having an aspect ratio between, but not including, 1.0 and 2.0. The semiconductor structure also includes a nanocrystalline shell composed... Agent:
20130112941 - Semiconductor structure having nanocrystalline core and nanocrystalline shell with insulator coating: Semiconductor structures having a nanocrystalline core and corresponding nanocrystalline shell and insulator coating are described. In an example, a semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material and having an aspect ratio between, but not including, 1.0 and 2.0. The semiconductor structure also includes a... Agent:
20130112964 - Amphiphilic protein in printed electronics: Disclosed is a method for preparing an organic electronic device, which contains one or more layers of a suitable functional material on a substrate, which process is characterized in that at least one interlayer of an amphiphilic protein is placed between adjacent layers of the functional material, or between the... Agent: Basf Se
20130112950 - Compound having carbazole ring structure, and organic electroluminescent device: There is provided an organic compound of excellent characteristics that exhibits excellent hole-injecting/transporting performance and has high triplet exciton confining capability with an electron blocking ability, and that has high stability in the thin-film state and high luminous efficiency. The compound is used to provide a high-efficiency, high-durability organic electroluminescent... Agent: Hodogaya Chemical Co., Ltd.
20130112952 - Depositing premixed materials: A combination of host materials suitable for co-evaporation or premix evaporation, and devices containing the combination of host materials are provided. The combination of host materials provides improved lifetime and efficiency. A method for fabricating devices containing the host material combination is also provided.... Agent: Universal Display Corporation (027166)
20130112954 - Dibenzo[f,h]quinoxaline compound, light-emitting element, light-emitting device, electronic device, and lighting device: A novel compound which can be used as a material for a light-emitting element is provided. Specifically, a novel compound is provided which can be suitably used as a material for a light-emitting element where a phosphorescent compound enabling high emission efficiency of the light-emitting element is used as a... Agent: Semiconductor Energy Laboratory Co., Ltd.
20130112948 - Heterocyclic compound and organic light-emitting diode including the same: in Formulae 1A and 1B, R1 to R9, Ar1, Ar2, A, B, a and b are the same as described in the detailed description section of the present application. The organic light-emitting diode including an organic layer including the heterocyclic compound has a low driving voltage, high luminescence efficiency, and... Agent: Samsung Mobile Display Co., Ltd.
20130112960 - High resolution pixel architecture: A pixel structure comprises a substantially transparent substrate, a drive transistor formed on the substrate, an organic light emitting device formed on the opposite side of the drive transistor from the substrate, a reflective layer disposed between the light emitting device and the drive transistor and having a reflective surface... Agent: Ignis Innovation Inc.
20130112955 - Light-emitting module and light-emitting device: Provided is a light-emitting module from which light with uniform brightness can be extracted. Further, provided is a beautiful light-emitting module in which Newton's rings are not observed. The light-emitting module includes a first substrate, a light-emitting element formed on one surface side of the first substrate, a second substrate,... Agent: Semiconductor Energy Laboratory Co., Ltd.
20130112959 - Luminance-enhancing polarising plate for an organic light-emitting element: There is provided a polarizer for organic light emitting diodes (OLED) having improved brightness. The polarizer, which comprises a linear polarizer and a ¼ retardation plate, comprises a reflective polarizer film disposed between the linear polarizer and the ¼ retardation plate and transmitting a polarized light horizontal to the transmission... Agent: Lg Chem, Ltd.
20130112966 - Method for manufacturing organic light-emitting device and organic light-emitting device: The present invention provides a method for manufacturing an organic light-emitting device capable of simply manufacturing the organic light-emitting device without requiring a vacuum atmosphere. The manufacturing method of the present invention includes: a step of preparing a supporting substrate having an organic electroluminescent element formed thereon, the organic electroluminescent... Agent: Sumitomo Chemical Company, Limited
20130112963 - Optoelectronic device having an elastic electrode: The present disclosure relates to an optoelectronic device, in particular to an arrangement for contacting an optoelectronic device. The optoelectronic device (200) includes an elastic electrode (208). A method for forming the elastic electrode (208) is described.... Agent:
20130112956 - Organic light emitting diode display and manufacturing method thereof: The described technology relates generally to an OLED display and manufacturing method thereof. The OLED display includes a substrate, a thin film transistor on the substrate and including a semiconductor layer, a gate electrode, a source electrode, and a drain electrode, and an organic light emitting element coupled to the... Agent: Samsung Display Co., Ltd.
20130112953 - Organic light-emitting device: The organic light-emitting device includes: a transparent electrode; a counter electrode; a light-emitting layer interposed between the transparent electrode and the counter electrode; a front substrate which allows light from the light-emitting layer to exit to the outside from a surface of the front substrate on the opposite side to... Agent: Hitachi, Ltd.
20130112962 - Organic light-emitting device and method for manufacturing same: An exemplary embodiment of the present invention provides a method for preparing an organic light-emitting device, comprising the steps of: 1) forming a spacer pattern on a first electrode formed on a substrate; 2) forming an organic material layer and a second electrode; 3) exposing the first electrode by forming... Agent: Lg Chem, Ltd.
20130112965 - Organic light-emitting device material having dibenzosuberone skeleton: The present invention provides an organic light-emitting device material that exhibits high emission efficiency and is used in an organic light-emitting device having a low driving voltage. The organic light-emitting device material is represented by general formula (1) below:... Agent: Canon Kabushiki Kaisha
20130112949 - Organic light-emitting device, method of manufacturing the same, and flat panel display device including the same: An organic light-emitting device including: a substrate; a first electrode; a second electrode; an emission layer between the first electrode and the second electrode; and an electron transport layer between the emission layer and the second electrode, wherein the emission layer includes a blue emission layer, the electron transport layer... Agent:
20130112958 - Organic light-emitting display panel and manufacturing method: Embodiments of the invention provide an organic light-emitting display (OLED) panel and a manufacturing method for the OLED panel, which comprises providing a substrate comprising a first electrode layer which comprises a plurality of first electrodes spaced apart from each other, forming an insulating layer on the substrate, etching off... Agent: Boe Technology Group Co., Ltd.
20130112947 - Organic photoelectronic device and image sensor: An organic photoelectric device may include an anode and a cathode configured to face each other, and an active layer between the anode and cathode, wherein the active layer includes a quinacridone derivative and a thiophene derivative having a cyanovinyl group.... Agent: Samsung Electronics Co., Ltd.
20130112961 - Organic semiconductor material and light-emitting element, light-emitting device, lighting system, and electronic device using the same: Disclosed is a novel organic semiconductor material which has a twisted quaterphenylene skeleton as a central unit and simultaneously possesses a skeleton having an electron-transporting property and a skeleton having a hole-transporting property at the terminals of the quaterphenylene skeleton. Specifically, the organic semiconductor material has a [1,1′:2′,1″:2″,1′″]quaterphenyl-4-4′″-diyl group, and... Agent: Semiconductor Energy Laboratory Co., Ltd.
20130112957 - Polymer-based organic electroluminescent device: An electroluminescence device having an emission layer comprising a single organic compound layer between a cathode and an anode. The single layer may comprise an emitter component on a single polymer chain of covalently linked (co)-polymer sections Y1, optionally in combination with Y2, and/or Y3, or different polymer chains Y1,... Agent: Commonwealth Scientific And Industrial Research Or
20130112951 - Solution processable doped triarylamine hole injection materials: Methods for fabricating a solution-processed OLED are provided. The methods include depositing an organic layer comprising mixture of an organic electron acceptor and an organic electron donor to form a layer that is insoluble to a non-polar solvent. Devices containing the organic layer may demonstrate improved lifetime and have a... Agent: Universal Display Corporation
20130112971 - Composite oxide sintered body and sputtering target comprising same: A composite oxide sintered body includes In, Zn, and Sn, and has a relative density of 90% or more, an average crystal grain size of 10 μm or less, and a bulk resistance of 30 mΩcm or less, the number of tin oxide aggregate particles having a diameter of 10... Agent: Idemitsu Kosan Co., Ltd.
20130112967 - Field-effect transistor with a dielectric layer having therein denatured albumen: A field-effect transistor includes a gate electrode, a source electrode, a drain electrode, a semiconductor active layer, and a dielectric layer. The semiconductor active layer is connected to the source electrode and the drain electrode. The dielectric layer includes denatured albumen and is positioned between the gate electrode and the... Agent: National Cheng Kung University
20130112969 - Method of manufacturing p-type zno nanowires and method of manufacturing energy conversion device: A method of manufacturing silver (Ag)-doped zinc oxide (ZnO) nanowires and a method of manufacturing an energy conversion device are provided. In the method of manufacturing Ag-doped ZnO nanowires, the Ag-doped nanowires are grown by a low temperature hydrothermal synthesis method using a Ag-containing aqueous solution.... Agent: Samsung Electronics Co., Ltd.
20130112973 - Precursor composition and method for forming amorphous conductive oxide film: The present invention provides a precursor composition for forming a conductive oxide film having high conductivity and a stable amorphous structure maintained even after heated at high temperature by a simple liquid phase process. The precursor composition of the present invention contains at least one selected from the group consisting... Agent: Japan Science And Technology Agency
20130112968 - Semiconductor device: A semiconductor device which achieves miniaturization with favorable characteristics maintained is provided. In addition, a miniaturized semiconductor device is provided with high yield. In a semiconductor device including an oxide semiconductor, the contact resistance between the oxide semiconductor and the source electrode or the drain electrode is reduced with miniaturization... Agent: Semiconductor Energy Laboratory Co., Ltd.
20130112970 - Thin film transistor substrate and fabrication method for the same: A TFT substrate (30a) including a TFT (5a) having: a gate electrode (14a) provided on a substrate (10a); a gate insulating film (15) provided to cover the gate electrode (14a); a semiconductor layer (16a) made of an oxide semiconductor provided on the gate insulating film (15) with a channel region... Agent:
20130112972 - Thin-film transistor: Making it possible to improve adhesion between the semiconductor layer and the electrodes, realize high-speed operation of the thin-film transistor by enhancing ohmic contact between these members, reliably prevent oxidation of the electrode surfaces, and realize an electrode fabrication process with few processing steps. The thin-film transistor 10 of the... Agent: Advanced Interconnect Materials, LLC
20130112974 - Method for determining the local stress induced in a semiconductor material wafer by through vias: A method for determining, in a first semiconductor material wafer having at least one through via, mechanical stress induced by the at least one through via, this method including the steps of: manufacturing a test structure from a second wafer of the same nature as the first wafer, in which... Agent: Stmicroelectronics (crolles 2) Sas
20130112979 - Fringe field switching liquid crystal display device and method of fabricating the same: A fringe field switching (FFS) liquid crystal display (LCD) device which uses an organic insulating layer and consumes less power, in which film quality of an upper layer of a low temperature protective film is changed to improve undercut within a pad portion contact hole, and a method for fabricating... Agent: Lg Display Co., Ltd.
20130112980 - Light-emitting device and method of manufacturing the same: To provide a bright and highly reliable light-emitting device. An anode (102), an EL layer (103), a cathode (104), and an auxiliary electrode (105) are formed sequentially in lamination on a reflecting electrode (101). Further, the anode (102), the cathode (104), and the auxiliary electrode (105) are either transparent or... Agent: Semiconductor Energy Laboratory Co., Ltd.
20130112977 - Pixel structure, array substrate and method of fabricating the same: The present invention provides a pixel structure including a substrate, a first metal pattern layer, an insulating layer, a second metal pattern layer, a passivation layer, and a conductive protection layer. The substrate has at least one pixel region. The first patterned metal layer is disposed on the substrate, and... Agent:
20130112981 - Semiconductor device, and method of forming the same: In order to realize a semiconductor device of enhanced TFT characteristics, a semiconductor thin film is selectively irradiated with a laser beam at the step of crystallizing the semiconductor thin film by the irradiation with the laser beam. By way of example, only driver regions (103 in FIG. 1) are... Agent: Semiconductor Energy Laboratory Co., Ltd.
20130112975 - Thin-film transistor array substrate, organic light emitting display device including the same, and method of manufacturing the same: A TFT array substrate including: a thin-film transistor including an active layer, gate, source and drain electrodes, a first insulation layer between the active layer and the gate electrode, and a second insulation layer between the gate and the source and drain electrodes; a pixel electrode on the first and... Agent: Samsung Mobile Display Co., Ltd.
20130112976 - Thin-film transistor array substrate, organic light-emitting display including the same, and method of manufacturing the same: A thin-film transistor array substrate is disclosed. In one embodiment, the substrate includes: i) a thin-film transistor including an active layer, and gate, source and drain electrodes, ii) a lower electrode of a capacitor, iii) an upper electrode of the capacitor formed on the lower electrode iv) a first insulation... Agent: Samsung Mobile Display Co., Ltd.
20130112978 - Wiring structure, thin film transistor array substrate including the same, and display device: On each of wiring conversion parts connected to a first conductive film and a second conductive film each functioning as a wiring, a first transparent conductive film does not cover an end surface of the second conductive film in proximity to a corner of the first transparent conductive film, and... Agent:
20130112982 - Method for forming nanofin transistors: One aspect of the present subject matter relates to a method for forming a transistor. According to an embodiment, a fin is formed from a crystalline substrate. A first source/drain region is formed in the substrate beneath the fin. A surrounding gate insulator is formed around the fin. A surrounding... Agent: Micron Technology, Inc.
20130112983 - Pixel structure and manufacturing method thereof: A pixel structure and a method for manufacturing the same are disclosed. The pixel structure of the present invention is a pixel structure implemented by combining an in-plane switching (IPS) technique and a fringe field switching (FFS) technique. In each pixel structure, two transparent conductive layers are utilized to form... Agent: Hannstar Display Corporation
20130112984 - Flexible display apparatus: A flexible display apparatus is disclosed. The flexible display apparatus includes: a substrate on which a display unit for displaying an image, a non-display area formed outside the display unit, and at least one pad for inputting an electrical signal to the display unit are located; and a circuit board... Agent:
20130112989 - Broad-area lighting systems: In accordance with certain embodiments, illumination systems are formed by aligning light-emitting elements with optical elements and/or disposing light-conversion materials on the light-emitting elements, as well as by providing electrical connectivity to the light-emitting elements... Agent: Cooledge Lighting, Inc.
20130112990 - Gallium nitride devices with compositionally-graded transition layer: The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in... Agent: International Rectifier Corporation
20130112986 - Gallium nitride semiconductor devices and method making thereof: The present disclosure relates to an enhancement mode gallium nitride (GaN) transistor device. The GaN transistor device has an electron supply layer located on top of a GaN layer. An etch stop layer (e.g., AlN) is disposed above the electron supply layer. A gate structure is formed on top of... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.
20130112987 - Light emitting diode and fabricating method thereof: A light emitting diode including a GaN substrate, a first type semiconductor layer, a light emitting layer, a second type semiconductor layer, a first electrode, and a second electrode is provided. The GaN substrate has a first surface and a second surface opposite thereto, and the second surface has a... Agent: Industrial Technology Research Institute
20130112985 - Monolithically integrated vertical jfet and schottky diode: An integrated device including a vertical III-nitride FET and a Schottky diode includes a drain comprising a first III-nitride material, a drift region comprising a second III-nitride material coupled to the drain and disposed adjacent to the drain along a vertical direction, and a channel region comprising a third III-nitride... Agent: Epowersoft, Inc.
20130112988 - Semiconductor light emitting device and wafer: A semiconductor light emitting device includes a first layer including at least one of n-type GaN and n-type AlGaN; a second layer including Mg-containing p-type AlGaN; and a light emitting section provided between the first and second layers. The light emitting section includes barrier layers of Si-containing AlxGa1-x-yInyN (0≦x, 0≦y,... Agent:
20130112992 - High temperature transducer using soi, silicon carbide or gallium nitride electronics: There is disclosed a high temperature pressure sensing system which includes a SOI, silicon carbide, or gallium nitride Wheatstone bridge including piezoresistors. The bridge provides an output which is applied to an analog to digital converter also fabricated using SOI, silicon carbide, or gallium nitride materials. The output of the... Agent: Kulite Semiconductor Products, Inc.
20130112996 - Semiconductor device and method for manufacturing same: There are provided a high-quality semiconductor device having stable characteristics and a method for manufacturing such a semiconductor device. The semiconductor device includes a substrate having a main surface, and a silicon carbide layer. The silicon carbide layer is formed on the main surface of the substrate. The silicon carbide... Agent: Sumitomo Electric Industries, Ltd.
20130112993 - Semiconductor device and wiring substrate: A semiconductor device according to one embodiment of the present invention includes an insulating substrate, a wiring layer formed on a first main surface of the insulating substrate and having a conductive property, and a semiconductor element mounted on the wiring layer. In the semiconductor device, the insulating substrate is... Agent: Sumitomo Electric Industries, Ltd.
20130112994 - Semiconductor module and method for manufacturing semiconductor module: The semiconductor module includes a base and at least one circuit substrate. The at least one circuit substrate has a supporting substrate and a semiconductor element supported by the supporting substrate. The base and/or the supporting substrate has a structure for fitting the at least one circuit substrate with the... Agent: Sumitomo Electric Industries, Ltd.
20130112995 - Semiconductor wafer and method for manufacturing the same: An embodiment of a method for manufacturing a semiconductor wafer includes providing a monocrystalline silicon wafer, epitaxially growing a first layer of a first material on the silicon wafer, and epitaxially growing a second layer of a second material on the first layer. For example, said first material may be... Agent: Stmicroelectronics S.r.l.
20130112991 - Silicon carbide schottky-barrier diode device and method for manufacturing the same: The present invention provides a silicon carbide Schottky-barrier diode device and a method for manufacturing the same. The silicon carbide Schottky bather diode device includes a primary n− epitaxial layer, an n+ epitaxial region, and a Schottky metal layer. The primary n− epitaxial layer is deposited on an n+ substrate... Agent: Hyundai Motor Company
20130112997 - Silicon carbide substrate, semiconductor device, and soi wafer: Disclosed is a silicon carbide substrate which has less high frequency loss and excellent heat dissipating characteristics. The silicon carbide substrate (S) is provided with a first silicon carbide layer (1), which is composed of a polycrystalline silicon carbide, and a second silicon carbide layer (2), which is composed of... Agent: Mitsui Engineering & Shipbuilding Co., Ltd.
20130112998 - Solid state light emitting semiconductor device: A solid state light emitting semiconductor device including a substrate, a mesa epitaxy stacking structure, an insulating layer, a first type electrode and a second type electrode is provided. The mesa epitaxy stacking structure includes a first type semiconductor layer, an active layer and a second type semiconductor layer arranged... Agent: Lextar Electronics Corproation
20130112999 - Light emitting diode and light emitting diode lamp: A light emitting diode is provided by the present invention which includes a pn junction-type light emitting unit having a light emitting layer (10) composed of n layers of a strained light emitting layer (12) and n−1 layers of a barrier layer (13), wherein when a barrier layer exists, the... Agent: Showa Denko K.k.
20130113000 - Display substrates and methods of fabricating the same: Display substrates are disclosed. In one aspect, display substrates include a first signal line, a second signal line, a first detour signal line and a second detour signal line. The first signal line includes a first region and a pair of second regions disposed on opposite sides of the first... Agent: Samsung Mobile Display Co., Ltd.
20130113001 - Led package module: An LED package module includes a circuit board, a metal board, a plurality of chips, a plurality of wires and a molding component. The metal board directly covers the whole upper surface of the circuit board, wherein the metal board is provided with a plurality of chip-mounting pads and a... Agent:
20130113002 - Low cost mounting of leds in tl-retrofit tubes: This invention relates to a lighting device comprising a light transmissive light outlet unit (102), and light emitting diodes (104) generating light which is emitted through the light outlet unit. The lighting device further comprises a conductive layer structure (114), which is arranged as a coating on a portion of... Agent: Koninklijke Philips Electronics N.v.
20130113003 - Luminescent light source and display panel having the same: A luminescent light source including a blue light emitting diode (LED) chip, a red LED chip, and a wavelength converting material is provided. The blue LED chip and the red LED chip respectively emit a first light and a second light. A ratio of peak intensity of the second light... Agent: Au Optronics Corporation
20130113004 - Light-emitting device with head-to-tail p-type and n-type transistors: A light-emitting microelectronic device including a first N-type transistor (T1) and a second P-type transistor (T2), the respective gates of which are formed opposite one another, either side of an intrinsic semiconductor material region.... Agent: Commissariat A L'energie Atomique Et Aux Energies Alternatives
20130113011 - Full spectrum solid state white light source, method for manufacturing and applications: A method of manufacturing a down-conversion substrate for use in a light system includes forming a first crystallography layer including one or more phosphor materials and, optionally, applying at least one activator to the crystallography layer, heating the crystallography layer at high temperature to promote crystal growth in the crystallography... Agent:
20130113007 - Light emitting device: Disclosed is a light emitting device including a light emitting structure including a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer, a first electrode layer, a second electrode layer disposed between the light emitting structure and the first electrode layer, and an insulating... Agent:
20130113013 - Metal foil laminate, substrate for mounting led, and light source device: Provided is a metal foil laminate that: has heat resistance; has high reflectance in the visible light range; has little decrease in reflectance in environments with a high-temperature thermal load; is compatible with large surface areas; and can be used for printed circuit boards for mounting LEDs that have excellent... Agent: Mitsubishi Plastics Inc
20130113009 - Method of manufacturing light emitting device package: A method of manufacturing a light emitting device (LED) package includes forming a reflector using nano-imprinting to increase an intensity of light extracted toward an external environment by increasing an angle of a reflector.... Agent: Samsung Electronics Co., Ltd.
20130113010 - Optoelectronic component and method for producing an optoelectronic component: An optoelectronic component comprising an optoelectronic semiconductor chip (104) having a contact side (106) and a radiation coupling-out side (108) situated opposite; a chip carrier (102), on which the semiconductor chip (104) is applied via its contact side (106); a radiation conversion element (110) applied on the radiation coupling-out side... Agent: Osram Opto Semiconductors Gmbh
20130113005 - Semiconductor light emitting device and fabrication method thereof: A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A reflective structure is formed on the light emitting structure and includes a... Agent: Samsung Electronics Co., Ltd.
20130113006 - Semiconductor light emitting device and fabrication method thereof: A semiconductor light emitting device include an n-type semiconductor layer, an active layer disposed on the n-type semiconductor layer, and a first p-type semiconductor layer disposed on the active layer. The first p-type semiconductor layer has an uneven structure formed on a surface thereof. A second p-type semiconductor layer has... Agent: Samsung Electronics Co., Ltd.
20130113012 - Semiconductor light-emitting element, lamp, electronic device and machine: A semiconductor light-emitting element (1) is provided which includes a semiconductor layer (10), an n-type electrode (18) which is provided on an exposed surface (12a) of an n-type semiconductor layer, wherein an exposed surface is exposed by removing a part of the semiconductor layer (10), a transparent conductive film which... Agent: Toyoda Gosei Co., Ltd.
20130113008 - Wavelength conversion sheet filled with large amount of phosphor, method of producing light emitting semiconductor device using the sheet, and light emitting semiconductor device: A wavelength conversion sheet filled with a large amount of phosphor, enabling the phosphor to be easily dispersed uniformly and in a large amount near the surface of an LED element. Specifically, the sheet includes: a layer formed from a heat-curable resin composition, which contains 100 parts by mass of... Agent: Shin-etsu Chemical Co., Ltd.
20130113014 - Optoelectronic device: The application provides an optoelectronic device structure, comprising a semiconductor stack, comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; a first electrode electrically connecting with the first conductivity type semiconductor layer, and further comprising a first extension electrode; a second electrode... Agent: Epistar Corporation
20130113016 - Packaging photon building blocks with top side connections and interconnect structure: Standardized photon building blocks are used to make both discrete light emitters as well as array products. Each photon building block has one or more LED chips mounted on a substrate. No electrical conductors pass between the top and bottom surfaces of the substrate. The photon building blocks are supported... Agent: Bridgelux, Inc.
20130113015 - Substrate, light emitting device and method for manufacturing substrate: A substrate includes a first lead frame, a second lead frame, and a resin layer. The first lead frame includes a heat sink and a plurality of electrodes for external connection. The second lead frame is laminated on the first lead frame and includes a plurality of wirings for mounting... Agent: Shinko Electric Industries Co., Ltd.
20130113017 - Electronic device for protecting from electrostatic discharge: A protection device includes a triac and triggering units. Each triggering unit is formed by a MOS transistor configured to operate at least temporarily in a hybrid operating mode and a field-effect diode. The field-effect diode has a controlled gate that is connected to the gate of the MOS transistor.... Agent: Stmicroelectronics S.a.
20130113018 - Field effect transistor: p
20130113019 - Semiconductor device with reduced threshold variability having a threshold adjusting semiconductor alloy in the device active region: Generally, the subject matter disclosed herein is directed to semiconductor devices with reduced threshold variability having a threshold adjusting semiconductor material in the device active region. One illustrative semiconductor device disclosed herein includes an active region in a semiconductor layer of a semiconductor device substrate, the active region having a... Agent: Globalfoundries Inc.
20130113022 - Sige hbt and manufacturing method thereof: A silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) is disclosed, which includes: two isolation structures each being formed in a trench; a set of three or more pseudo buried layers formed under each trench with every adjacent two pseudo buried layers of the set being vertically contacted with each other; and... Agent: Shanghai Hua Hong Nec Electronics Co., Ltd.
20130113020 - Sige hbt and method of manufacturing the same: A SiGe HBT is disclosed, which includes: a silicon substrate; shallow trench field oxides formed in the silicon substrate; a pseudo buried layer formed at bottom of each shallow trench field oxide; a collector region formed beneath the surface of the silicon substrate, the collector region being sandwiched between the... Agent: Shanghai Hua Hong Nec Electronics Co., Ltd.
20130113021 - Sige hbt having deep pseudo buried layer and manufacturing method thereof: A silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) having a deep pseudo buried layer is disclosed. The SiGe HBT includes isolation structures formed in trenches, first pseudo buried layers and second pseudo buried layers, and a collector region. The first pseudo buried layers are formed under the respective trenches and the... Agent: Shanghai Hua Hong Nec Electronics Co., Ltd.
20130113023 - Multi-fin device by self-aligned castle fin formation: The present disclosure provides a method includes forming a multi-fin device. The method includes forming a patterned mask layer on a semiconductor substrate. The patterned mask layer includes a first opening having a first width W1 and a second opening having a second width W2 less than the first width.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd
20130113024 - Solid-state image pickup device, image pickup system including the same, and method for manufacturing the same: A solid-state image pickup device including a photoelectric conversion element, a floating diffusion, and an element isolation region that are disposed above a first semiconductor region has a second semiconductor region of a first conductivity type disposed on the first semiconductor region. An interface between the first semiconductor region and... Agent: Canon Kabushiki Kaisha
20130113026 - Fin field effect transistor gate oxide: The present disclosure provides for methods of fabricating a semiconductor device and such a device. A method includes providing a substrate including at least two isolation features, forming a fin substrate above the substrate and between the at least two isolation features, forming a silicon liner over the fin substrate,... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20130113027 - Metal oxide semiconductor transistor and manufacturing method thereof: The present invention provides a MOS transistor, including a substrate, a gate oxide, a gate, a source/drain region and a silicide layer. The gate oxide is disposed on the substrate and the gate is disposed on the gate oxide. The source/drain region is disposed in the substrate at two sides... Agent:
20130113028 - Semiconductor device and field effect transistor: A semiconductor device comprises a substrate 1, a first n-type semiconductor layer 21′, a second n-type semiconductor layer 23, a p-type semiconductor layer 24, and a third n-type semiconductor layer 25′, wherein the first n-type semiconductor layer 21′, the second n-type semiconductor layer 23, the p-type semiconductor layer 24, and... Agent: Nec Corporation
20130113025 - Semiconductor device structure and method for manufacturing the same: The present invention provides a semiconductor device structure and a method for manufacturing the same. The method comprises: providing a semiconductor substrate, forming a first insulating layer on the surface of the semiconductor substrate; forming a shallow trench isolation embedded in the first insulating layer and the semiconductor substrate; forming... Agent: Institute Of Microlectronics, Chinesse Academy Of Sciences
20130113029 - Semiconductor device having vertical channel transistor and methods of fabricating the same: the first pair of pillars, the first bit line extending in a second direction that is substantially perpendicular to the first direction, a first contact gate disposed on a first surface of the first pillar with a first gate insulating layer therebetween, a second contact gate disposed on a first... Agent: Samsung Electronics Co., Ltd.
20130113030 - Semiconductor device: The performance of a semiconductor device including a nonvolatile memory is enhanced. Each of nonvolatile memory cells arranged over a silicon substrate includes: a first n-well; a second n-well formed in a place different from the place thereof; a selection transistor formed in the first n-well; and an electric charge... Agent: Renesas Electronics Corporation
20130113031 - Kink poly structure for improving random single bit failure: A memory cell having a kinked polysilicon layer structure, or a polysilicon layer structure with a top portion being narrower than a bottom portion, may greatly reduce random single bit (RSB) failures and may improve high density plasma (HDP) oxide layer fill-in by reducing defects caused by various impurities and/or... Agent: Macronix International Co., Ltd.
20130113034 - Non-volatile semiconductor memory device, production method for same, and charge storage film: A non-volatile semiconductor memory device comprises a tunnel insulating film on a semiconductor substrate, a charge storage film on the tunnel insulating film, a blocking insulating film on the charge storage film, a control gate electrode arranged on the blocking insulating film, and source/drain regions formed on the semiconductor substrate... Agent: Tokai University Educational System
20130113033 - Nonvolatile memory device and method for fabricating the same: A non-volatile memory device in accordance with one embodiment of the present invention includes a substrate including a P-type impurity-doped region, a channel structure comprising a plurality of interlayer insulating layers that are alternately stacked with a plurality of channel layers on the substrate, a P-type semiconductor pattern that contacts... Agent:
20130113032 - Semiconductor memory device and method for manufacturing same: A semiconductor memory device includes a substrate, a conductive layer provided on a major surface of the substrate, a stacked body, a memory film, and a channel body. The stacked body includes multiple insulating layers alternately stacked with multiple electrode layers on the conductive layer. The memory film includes a... Agent: Kabushiki Kaisha Toshiba
20130113035 - Semiconductor device and method of manufacturing same: A memory cell is configured by a selection pMIS having a selection gate electrode including a conductive film exhibiting a p-type conductivity and a memory pMIS having a memory gate electrode including a conductive film exhibiting a p-type conductivity, and at the time of write, hot electrons are injected into... Agent: Renesas Electronics Corporation
20130113036 - Transistor assembly as an esd protection measure: A diode (23) is arranged near a transistor (25) to protect from ESD. The diode comprises a well (5) of a first conductivity type and a doped region (4) of a second conductivity type in opposition to the first conductivity type. The transistor comprises a doped well (2) and a... Agent: Ams Ag
20130113037 - Method for manufacturing semiconductor device and semiconductor device: A manufacturing method includes forming a fin-shaped silicon layer on a silicon substrate, forming a first insulating film around the fin-shaped silicon layer, and forming a pillar-shaped silicon layer on the fin-shaped silicon layer; forming diffusion layers in an upper portion of the pillar-shaped silicon layer, an upper portion of... Agent: Unisantis Electronics Singapore Pte. Ltd.
20130113039 - Semiconductor device: A semiconductor device provides a MOSFET having first and second regions. In the first region, a plurality of unit cells of the MOSFET device are provided. At the end of the plurality of the unit cells, a termination cell is provided. An n type layer underlies the unit cells, between... Agent: Kabushiki Kaisha Toshiba
20130113040 - Semiconductor device comprising transistor structures and methods for forming same: A method for forming an opening within a semiconductor material comprises forming a neck portion, a rounded portion below the neck portion and, in some embodiments, a protruding portion below the rounded portion. This opening may be filled with a conductor, a dielectric, or both. Embodiments to form a transistor... Agent: Micron Technology, Inc.
20130113038 - Trench mosfet with split trenched gate structures in cell corners for gate charge reduction: A trench MOSFET with closed cells having split trenched gates structure in trenched gates intersection area in cell corner is disclosed. The invented split trenched gates structure comprises an insulation layer between said split trenched gates with thick thermal oxide layer in center portion of the trenched gates intersection area,... Agent: Feei Cherng Enterprise Co., Ltd.
20130113041 - Semiconductor transistor device with optimized dopant profile: Provided is a transistor and a method for forming a transistor in a semiconductor device. The method includes performing at least one implantation operation in the transistor channel area, then forming a silicon carbide/silicon composite film over the implanted area prior to introducing further dopant impurities. A halo implantation operation... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.
20130113042 - Multi-gate semiconductor devices and methods of forming the same: A multi-gate semiconductor device and method for forming the same. A multi-gate semiconductor device is formed including a first fin of a first transistor formed on a semiconductor substrate having a first dopant type. The first transistor has a doped channel region of the first dopant type. The device also... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.
20130113043 - Radiation hardened memory cell and design structures: A radiation hardened static memory cell, methods of manufacture and design structures are provided. The method includes forming one or more first gate stacks and second gate stacks on a substrate. The method further includes providing a shallow implant process for the one or more first gate stacks such that... Agent: International Business Machines Corporation
20130113044 - Semiconductor device: It is an object to provide a semiconductor device typified by a display device having a favorable display quality, in which parasitic resistance generated in a connection portion between a semiconductor layer and an electrode is suppressed and an adverse effect such as voltage drop, a defect in signal wiring... Agent: Semiconductor Energy Laboratory Co., Ltd.
20130113045 - Electrostatic discharge (esd) device and semiconductor structure: An electrostatic discharge (ESD) device is described, including a gate line, a source region at a first side of the gate line, a comb-shaped drain region disposed at a second side of the gate line and having comb-teeth parts, a salicide layer on the source region and the drain region,... Agent: United Microelectronics Corp.
20130113046 - Semiconductor device and method for forming the same: Semiconductor devices and methods of forming the same are provided. The semiconductor device may include a semiconductor element disposed on a substrate and including an insulating layer and a gate electrode, a doped region having a first conductivity-type on the substrate, a conductive interconnection electrically connected to the gate electrode,... Agent: Samsung Electronics Co., Ltd.
20130113047 - Mosfet structure with t-shaped epitaxial silicon channel: A MOSFET disposed between shallow trench isolation (STI) structures includes an epitaxial silicon layer formed over a substrate surface and extending over inwardly extending ledges of the STI structures. The gate width of the MOSFET is therefore the width of the epitaxial silicon layer and greater than the width of... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.
20130113048 - High voltage semiconductor device and fabricating method thereof: A method for fabricating a high voltage semiconductor device is provided. Firstly, a substrate is provided, wherein the substrate has a first active zone and a second active zone. Then, a first ion implantation process is performed to dope the substrate by a first mask layer, thereby forming a first-polarity... Agent: United Microelectronics Corporation
20130113049 - Fuse circuit for final test trimming of integrated circuit chip: The present invention discloses a fuse circuit for final test trimming of an integrated circuit (IC) chip. The fuse circuit includes at least one electrical fuse, at least one control switch corresponding to the electrical fuse, and a resistant device. The electrical fuse is connected with the control switch in... Agent: Richtek Technology Corporation, R.o.c.
20130113050 - Blanket short channel roll-up implant with non-angled long channel compensating implant through patterned opening: A method that forms a structure implants a well implant into a substrate, patterns a mask on the substrate (to have at least one opening that exposes a channel region of the substrate) and forms a conformal dielectric layer on the mask and to line the opening. The conformal dielectric... Agent: International Business Machines Corporation
20130113051 - High performance low power bulk fet device and method of manufacture: A method of forming a semiconductor device includes: forming a channel of a field effect transistor (FET) in a substrate; forming a heavily doped region in the substrate; and forming recesses adjacent the channel and the heavily doped region. The method also includes: forming an undoped or lightly doped intermediate... Agent: International Business Machines Corporation
20130113052 - Metal-oxide-semiconductor field-effect transistor and method for manufacturing the same: A Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) is disclosed. The MOSFET includes a substrate, a well region formed in the substrate, a shallow channel layer, a channel, a gate oxide layer, a gate region, a source region, and a drain region. The shallow channel layer is formed on a portion of... Agent: Csmc Technologies Fab1 Co., Ltd.
20130113053 - Semiconductor structure and process thereof: A semiconductor structure includes a substrate, a dielectric layer and a fluoride metal layer. The dielectric layer is located on the substrate. The fluoride metal layer is located on the dielectric layer. Furthermore, the present invention also provides a semiconductor process to form said semiconductor structure.... Agent:
20130113054 - Semiconductor sensor device and method of packaging same: A packaged semiconductor device with a cavity formed by a cover or lid mounted to a substrate. The lid covers one or more semiconductor sensor dies mounted on the substrate. The dies are coated with a gel or spray on coating, and the lid is encapsulated with a mold compound.... Agent: Freescale Semiconductor, Inc
20130113055 - Sensor device manufacturing method and sensor device: A method for manufacturing a sensor device is provided. The method prevents corrosion of metal electrodes of a sensor due to outside air with high humidity and preventing the occurrence of warpage of the sensor due to resin sealing of the sensor, thereby reducing the influence on sensor characteristics, and... Agent: Dai Nippon Printing Co., Ltd.
20130113056 - Dynamic quantity sensor: The present invention provides a dynamic quantity device which reduces stress received by a sensor due to resin packaging and reduces variation in sensor characteristics due to stress. The dynamic quantity sensor includes a semiconductor substrate including a fixing part and a flexible part and a movable part positioned on... Agent: Dai Nippon Printing Co., Ltd.
20130113057 - Force sensing sheet: A force sensing array includes multiple layers of material that are arranged to define an elastically stretchable sensing sheet. The sensing sheet may be placed underneath a patient to detect interface forces or pressures between the patient and the support structure that the patient is positioned on. The force sensing... Agent: Stryker Corporation
20130113058 - Magnetic memory element, magnetic memory and manufacturing method of the same: A magnetic memory element includes: a first magnetization free layer configured to be composed of ferromagnetic material with perpendicular magnetic anisotropy; a reference layer configured to be provided near the first magnetization free layer; a non-magnetic layer configured to be provided adjacent to the reference layer; and a step formation... Agent: Nec Corporation
20130113059 - Photovoltaic device and method of manufacturing the same: A photovoltaic device includes a semiconductor substrate; an amorphous first conductive semiconductor layer on a first region of a first surface of the semiconductor substrate and containing a first impurity; an amorphous second conductive semiconductor layer on a second region of the first surface of the semiconductor substrate and containing... Agent:
20130113060 - Solid-state imaging device: A solid-state imaging device including unit pixel cells, each having a photoelectric conversion film and a pixel electrode which are formed above a silicon substrate, an amplification transistor which is formed on the silicon substrate and outputs a voltage according to a potential of the pixel electrode, and a reset... Agent: Panasonic Corporation
20130113063 - High bandwidth, monolithic traveling wave photodiode array: The monolithic application of a high speed TWPDA with impedance matching. Use of the high speed monolithic TWPDA will allow for more efficient transfer of optical signals within analog circuits and over distances.... Agent: University Of Virginia Patent Foundation, D/b/a University Of Virginia Licensing & Ventures Group
20130113061 - Image sensor trench isolation with conformal doping: Provided is a semiconductor image sensor device. The image sensor device includes a substrate. The image sensor device includes a first pixel and a second pixel disposed in the substrate. The first and second pixels are neighboring pixels. The image sensor device includes an isolation structure disposed in the substrate... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20130113062 - Lens holder, method for manufacturing the same and image capturing device thereof: A lens holder, a method for manufacturing the same and an image capturing device thereof. The lens holder comprises a hollow substrate, a filter, a hollow elastomer and a photodetector module. The hollow substrate comprises a photodetector accommodating space and a plurality of fixing mechanisms disposed around the photodetector accommodating... Agent: Altek Corporation
20130113064 - Photodetector, optical communication device equipped with the same, method for making of photodetector, and method for making of optical communication device: The present invention provides a photodetector which solves the problem of low sensitivity of a photodetector, an optical communication device equipped with the same, and a method for making the photodetector, and a method for making the optical communication device. The photodetector includes a substrate, a lower cladding layer arranged... Agent: Nec Corporation
20130113065 - Pad design for circuit under pad in semiconductor devices: Embodiments of a semiconductor device that includes a semiconductor substrate and a cavity disposed in the semiconductor substrate that extends at least from a first side of the semiconductor substrate to a second side of the semiconductor substrate. The semiconductor device also includes an insulation layer disposed over the first... Agent: Omnivision Technologies, Inc.
20130113066 - Utbb cmos imager: An image sensor device comprising at least one transistor lying on a semiconductor-on-insulator substrate, the substrate comprising a thin semi-conducting layer wherein a channel area of said transistor is made, an insulating layer separating the thin semi-conducting layer with a semi-conducting support layer, the device being characterized in that the... Agent: Commissariat A L'energie Atomique Et Aux Energies Alternatives
20130113067 - Thermal warp compensation ic package: An apparatus and method for temperature induced warpage compensation in an integrated circuit package is disclosed. The apparatus consists of bonded layers of material having different thermal coefficients of expansion. The bonded layers are bonded to the top of the integrated circuit package. By appropriate choice of temperature coefficients the... Agent: Alcatel-lucent Canada Inc.
20130113068 - Low-k dielectric protection spacer for patterning through substrate vias through a low-k wiring layer: A low-K value dielectric protection spacer for patterning through substrate vias (TSVs) through a low-K value wiring layer. A method for forming a low-K value dielectric protection spacer includes etching a via opening through a low-K value dielectric interconnect layer. A protective layer is deposited in the via opening and... Agent: Qualcomm Incorporated
20130113069 - Self-aligned semiconductor trench structures: Methods for forming a semiconductor device include forming self-aligned trenches, in which a first set of trenches is used to align a second set of trenches. Methods taught herein can be used as a pitch doubling technique, and may therefore enhance device integration. Further, employing a very thin CMP stop... Agent: Micron Technology, Inc.
20130113070 - Interposers for semiconductor devices and methods of manufacture thereof: Interposers for semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, an interposer includes a substrate, a contact pad disposed on the substrate, and a first through-via in the substrate coupled to the contact pad. A first fuse is coupled to the first through-via. A second through-via... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20130113071 - Semiconductor device with fuse: A semiconductor device includes a fuse configured to be programmed in response to a laser, a protective layer formed under the fuse and overlapping with a portion of the fuse, and a heat emission portion coupled with the protective layer.... Agent:
20130113072 - 3d capacitor and method of manufacturing same: A 3D capacitor and method for fabricating a 3D capacitor is disclosed. An exemplary 3D capacitor includes a substrate including a fin structure, the fin structure including a plurality of fins. The 3D capacitor further includes an insulation material disposed on the substrate and between each of the plurality of... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20130113079 - Blocking layers for leakage current reduction in dram devices: A method for forming a DRAM MIM capacitor stack having low leakage current involves the use of a first electrode that serves as a template for promoting the high k phase of a subsequently deposited dielectric layer. The high k dielectric layer comprises a doped material that can be crystallized... Agent: Intermolecular, Inc.
20130113074 - Capacitor system and method for producing a capacitor system: A capacitor system and a method for producing a capacitor system. The capacitor system may be used in a power semiconductor module. In one embodiment, the capacitor system comprises a metal shaped body having a depression; a capacitor arranged at least partly in the depression; a spacer composed of electrically... Agent: Semikron Elektronik Gmbh & Ko. Kg
20130113073 - Integrated circuit having a mom capacitor and method of making same: An integrated circuit can include a MOM capacitor formed simultaneously with other devices, such as finFETs. A dielectric layer formed on a substrate has a first semiconductor fin therein and a second semiconductor fin therein. Respective top portions of the fins are removed to form respective recesses in the dielectric... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20130113077 - Metal finger capacitor for high-k metal gate processes: Embodiments described herein provide a structure for finger capacitors, and more specifically metal-oxide-metal (“MOM”) finger capacitors and arrays of finger capacitors. A plurality of Shallow Trench Isolation (STI) formations is associated with every other column of capacitor fingers, with poly fill formations covering the STI formations to provide a more... Agent: Broadcom Corporation
20130113075 - Metal-insulator-metal capacitor structure and method for manufacturing the same: A metal-insulator-metal (MIM) capacitor structure includes a first dielectric layer, a first damascene electrode layer, an insulating barrier layer, a second dielectric layer and a second damascene electrode layer. The first damascene electrode layer is formed in the first dielectric layer. The insulating barrier layer covers the first dielectric layer... Agent: United Microelectronics Corporation
20130113076 - Metal-semiconductor wafer bonding for high-q devices: Methods and apparatus for metal semiconductor wafer bonding for high-Q devices are provided. An exemplary capacitor includes a first plate formed on a glass substrate, a second plate, and a dielectric layer. No organic bonding agent is used between the first plate and the glass substrate, and the dielectric layer... Agent: Qualcomm Incorporated
20130113080 - Non-volatile semiconductor storage device: A non-volatile semiconductor storage device contains a memory cell region, a first electrode, and a second electrode. The memory cell region is formed on a substrate and comprises multiple memory cells stacked on the substrate as part of memory strings. Multiple first conductive layers are laminated on the substrate. The... Agent:
20130113078 - Polysilicon-insulator-silicon capacitor in a sige hbt process and manufacturing method thereof: A PIS capacitor in a SiGe HBT process is disclosed, wherein the PIS capacitor includes: a silicon substrate; a P-well and shallow trench isolations formed in the silicon substrate; a P-type heavily doped region formed in an upper portion of the P-well; an oxide layer and a SiGe epitaxial layer... Agent: Shanghai Hua Hong Nec Electronics Co., Ltd.
20130113081 - Quantum capacitance graphene varactors and fabrication methods: A plate varactor includes a dielectric substrate and a first electrode embedded in a surface of the substrate. A capacitor dielectric layer is disposed over the first electrode, and a layer of graphene is formed over the dielectric layer to contribute a quantum capacitance component to the dielectric layer. An... Agent: International Business Machines Corporation
20130113082 - Method of forming pattern and developer for use in the method: Provided is a method of forming a pattern, including (a) forming a chemically amplified resist composition into a film, (b) exposing the film to light, (c) developing the exposed film with a developer containing an organic solvent, and (d) rinsing the developed film with a rinse liquid containing an organic... Agent: Fujifilm Corporation
20130113083 - Resin composition, resin film, semiconductor device, and production method thereof: wherein r, s, and t are independently a positive integer; the silicon atom at the terminal of the units constituting the repeating units represented by the formulae (1-1), (1-2), and (1-3) is bonded to the terminal carbon atom of the X1, X2, or X3 in the same or different unit;... Agent: Shin-etsu Chemical Co., Ltd.
20130113084 - Semiconductor substrate with molded support layer: Various semiconductor substrates and methods of processing the same are disclosed. In one aspect, a method of manufacturing is provided that includes mounting a first semiconductor chip on a side of a first substrate. The first substrate has at least one thru-silicon-via. An insulating layer is molded on the side... Agent:
20130113085 - Atomic layer deposition of films using precursors containing hafnium or zirconium: Provided are low temperature methods of depositing hafnium or zirconium containing films using a Hf(BH4)4 precursor, or Zr(BH4)4 precursor, respectively, as well as a co-reactant. The co-reactant can be selected to obtain certain film compositions. Co-reactants comprising an oxidant can be used to deposit oxygen into the film. Accordingly, also... Agent: Applied Materials, Inc.
20130113086 - Self-leveling planarization materials for microelectronic topography: Planarization methods and microelectronic structures formed therefrom are disclosed. The methods and structures use planarization materials comprising fluorinated compounds or acetoacetylated compounds. The materials are self-leveling and achieve planarization over topography without the use of etching, contact planarization, chemical mechanical polishing, or other conventional planarization techniques.... Agent: Brewer Science Inc.
20130113087 - Semiconductor component: A semiconductor component is disclosed. One embodiment provides a semiconductor body having a cell region with at least one zone of a first conduction type and at least one zone of a second conduction type in a rear side. A drift zone of the first conduction type in the cell... Agent: Infineon Technologies Austria Ag
20130113088 - Chip packaging structure, chip packaging method, and electronic device: The present invention relates to the field of chip packaging and discloses a chip packaging structure, a chip packaging method, and an electronic device, which are used to solve a problem that in the chip packaging structure, a shielding film formed by a conductive coating easily drops off. The chip... Agent: Huawei Device Co., Ltd.
20130113089 - Module ic package structure having a metal shielding function for preventing electrical malfunction induced by short-circuit: A module IC package structure having a metal shielding function includes a substrate unit, an electronic unit, a shielding unit, and an insulative unit. The substrate unit includes a substrate body and at least one grounding pad disposed on the substrate body. The electronic unit includes at least one electronic... Agent: Azurewave Technologies, Inc.
20130113090 - Power module, electrical power converter, and electric vehicle: In order to prevent an increase in temperature of a discharge resistance discharging an electric charge accumulated in a smoothing capacitor, the present description discloses a power module. The power module has a first lead frame, a second lead frame, first and second semiconductor switches connected in series between the... Agent:
20130113091 - Method of packaging semiconductor die: A method of packaging a semiconductor die includes the use of an embedded ground plane or drop-in embedded unit. The embedded unit is a single, stand-alone unit with at least one cavity. The embedded unit is placed on and within an encapsulation area of a process mounting surface. The embedded... Agent: Freescale Semiconductor, Inc
20130113092 - Semiconductor device and method of forming insulating layer disposed over the semiconductor die for stress relief: A semiconductor device has a semiconductor die and conductive layer formed over a surface of the semiconductor die. A first channel can be formed in the semiconductor die. An encapsulant is deposited over the semiconductor die. A second channel can be formed in the encapsulant. A first insulating layer is... Agent: Stats Chippac, Ltd.
20130113095 - Packaging substrate and fabrication method thereof: A packaging substrate includes a base body having at least a conductive pad on a surface thereof, a dielectric layer formed on the surface of the base body and having at least a first opening for exposing the conductive pad and at least a second opening formed at a periphery... Agent: Siliconware Precision Industries Co., Ltd.
20130113094 - Post-passivation interconnect structure and method of forming the same: A semiconductor device includes a conductive layer formed on the surface of a post-passivation interconnect (PPI) structure by an immersion tin process. A polymer layer is formed on the conductive layer and patterned with an opening to expose a portion of the conductive layer. A solder bump is then formed... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20130113096 - Semiconductor device: The semiconductor device includes a semiconductor chip 1, a first electrode pad 21 laminated on the semiconductor chip 1, an intermediate layer 4 having a rectangular shape defined by first edges 49a and second edges, and a plurality of bumps 5 arranged to sandwich the intermediate layer 4 by cooperating... Agent: Rohm Co., Ltd.
20130113093 - Semiconductor device and method of forming a metallurgical interconnection between a chip and a substrate in a flip chip package: A method for forming metallurgical interconnections and polymer adhesion of a flip chip to a substrate includes providing a chip having a set of bumps formed on a bump side thereof and a substrate having a set of interconnect points on a metallization thereon, providing a measured quantity of a... Agent: Stats Chippac, Ltd.
20130113097 - Methods of and semiconductor devices with ball strength improvement: In a method of improving ball strength of a semiconductor device, a ball pattern of a plurality of connection balls to be formed as electrical connections for the semiconductor device is received. The pattern includes a number of columns and rows crossing each other. The balls are arranged at intersections... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20130113099 - Package carrier, package carrier manufacturing method, package structure for semiconductor device and manufacturing method thereof: A package substrate including a dielectric layer, a first conductive layer, a second conductive layer and a bonding pad is provided. The dielectric layer has a top surface and a bottom surface. The first conductive layer is embedded into the dielectric layer, and a first surface of the first conductive... Agent: Advanpack Solutions Pte Ltd.
20130113098 - Through via package: An integrated circuit package includes an integrated circuit die in a reconstituted substrate. The active side is processed then covered in molding compound while the inactive side is processed. The molding compound on the active side is then partially removed and solder balls are placed on the active side.... Agent: Stmicroelectronics Pte Ltd.
20130113100 - Semiconductor structure and manufacturing method thereof: A semiconductor structure and a manufacturing method thereof are provided. The method includes the following steps. Firstly, a semiconductor substrate having an active surface and a back surface is provided. The active surface is opposite to the back surface, and the semiconductor substrate includes at least one grounding pad disposed... Agent: Ineffable Cellular Limited Liability Company
20130113105 - Barrier for through-silicon via: A system and a method for protecting vias is disclosed. An embodiment comprises forming an opening in a substrate. A barrier layer disposed in the opening including along the sidewalls of the opening. The barrier layer may include a metal component and an alloying material. A conductive material is formed... Agent: Taiwan Semiconductor Manufacturing Company, Ltd
20130113103 - Device having tsvs with gettering layer lateral to tsv tips: An integrated circuit (IC) includes a substrate having a topside semiconductor surface including active circuitry configured to provide functionality and a bottomside surface. A plurality of through substrate vias (TSVs) extend from the topside semiconductor surface to beyond the bottomside surface to provide protruding TSV tips. The TSVs include an... Agent: Texas Instruments Incorporated
20130113102 - Semiconductor interconnect structure having a graphene-based barrier metal layer: An interconnect structure and method for fabricating the interconnect structure having enhanced performance and reliability, by utilizing a graphene-based barrier metal layer to block oxygen intrusion from a dielectric layer into the interconnect structure and block copper diffusion from the interconnect structure into the dielectric layer, are disclosed. At least... Agent: International Business Machines Corporation
20130113104 - Structure for picking up a buried layer and method thereof: A structure for picking up a buried layer is disclosed. The buried layer is formed in a substrate and has an epitaxial layer formed thereon. One or more isolation regions are formed in the epitaxial layer. The structure for picking up the buried layer includes a contact-hole electrode formed in... Agent: Shanghai Hua Hong Nec Electronics Co., Ltd.
20130113101 - Use of gas cluster ion beam to reduce metal void formation in interconnect structures: A gas cluster ion beam process is used to reduce and/or even eliminate metal void formation in an interconnect structure. In one embodiment, gas cluster ion beam etching forms a chamfer opening in an interconnect dielectric material. In another embodiment, gas cluster ion beam etching reduces the overhang profile of... Agent: International Business Machines Corporation
20130113106 - Three-dimensional (3d) integrated circuit with enhanced copper-to-copper bonding: At least one metal adhesion layer is formed on at least a Cu surface of a first device wafer. A second device wafer having another Cu surface is positioned atop the Cu surface of the first device wafer and on the at least one metal adhesion layer. The first and... Agent: International Business Machines Corporation
20130113107 - Semiconductor device: A semiconductor device includes: a substrate comprised by gallium arsenide; an active layer provided on the substrate; a first nickel-plated layer provided on a lower face of the substrate facing the active layer; a copper-plated layer provided on a lower face of the first nickel-plated layer; and a second nickel-plated... Agent: Sumitomo Electric Device Innovations, Inc.
20130113108 - System in package process flow: A method comprises connecting a substrate having a plurality of integrated circuit (IC) dies to a package substrate, so that the package substrate extends beyond at least two edges of the substrate, leaving first and second edge portions of the package substrate having exposed contacts. The first and second edge... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.
20130113109 - Wiring structure, thin film transistor array substrate including the same, and display device: On a wiring conversion part connected to a first conductive film and a second conductive film each functioning as a wiring, a hollow portion is formed inside the second conductive film. A first transparent conductive film provided on the second conductive film is formed so as to cover an upper... Agent: Mitsubishi Electric Corporation
20130113112 - Semiconductor device: A local interconnect is formed in contact with an upper surface of an impurity diffusion region and extends to below a potential supply interconnect. A contact hole electrically couples the local interconnect to the potential supply interconnect. The local interconnect, which is formed in contact with the upper surface of... Agent: Panasonic Corporation
20130113111 - Semiconductor devices and methods of manufacturing the same: A semiconductor device and methods directed toward preventing a leakage current between a contact plug and a line adjacent to the contact plug, and minimizing capacitance between adjacent lines.... Agent: Sk Hynix Inc.
20130113110 - Semiconductor structure having lateral through silicon via and manufacturing method thereof: The present invention provides a semiconductor structure having a lateral TSV and a manufacturing method thereof. The semiconductor structure includes a chip having an active side, a back side disposed opposite to the active side, and a lateral side disposed between the active side and the back side. The chip... Agent:
20130113113 - Wiring structure in a semiconductor device, method of forming the wiring structure, semiconductor device including the wiring structure and method of manufacturing the semiconductor device: A wiring structure in a semiconductor device may include a first insulation layer formed on a substrate, a first contact plug, a capping layer pattern, a second insulation layer and a second contact plug. The first insulation layer has a first opening that exposes a contact region of the substrate.... Agent: Samsung Electronics Co., Ltd.
20130113116 - Contact and method of formation: A system and method for forming contacts is provided. An embodiment comprises forming the contacts on a substrate and then coining the contacts by physically shaping them using, e.g., a molding chamber. The physical shaping of the contacts may be performed using a patterned portion of the molding chamber or... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.
20130113114 - Device including two power semiconductor chips and manufacturing thereof: A device includes a first power semiconductor chip having a first face and a second face opposite to the first face with a first contact pad arranged on the first face. The first contact pad is an external contact pad. The device further includes a first contact clip attached to... Agent: Infineon Technologies Ag
20130113115 - System in package process flow: A method comprises connecting a substrate having a plurality of integrated circuit (IC) dies to a package substrate, so that the package substrate extends beyond at least two edges of the substrate, leaving first and second edge portions of the package substrate having exposed contacts. The first and second edge... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.
20130113117 - Wireless communication devices with in-package integrated passive components: Embodiments of the present disclosure can be used to both reduce the size and cost and improve the performance and power consumption of next generation wireless communication devices. In particular, embodiments enable board and semiconductor substrate area savings by using the fabrication package (which encapsulates the semiconductor substrate) as a... Agent:
20130113118 - Semiconductor device and method of forming sloped surface in patterning layer to separate bumps of semiconductor die from patterning layer: A semiconductor device has a semiconductor die with bumps formed over a surface of the semiconductor die. A conductive layer is formed over a substrate. A patterning layer is formed over the substrate and conductive layer. A masking layer having an opaque portion and linear gradient contrast portion is formed... Agent: Stats Chippac, Ltd.
20130113119 - Semiconductor device using composition for anisotropic conductive adhesive film or anisotropic conductive adhesive film: A semiconductor device bonded by an anisotropic conductive adhesive composition, the anisotropic conductive adhesive composition having a solid content ratio between a polymer binder system and a curing system of about 40:60 to about 60:40, and a coefficient of thermal expansion of about 150 ppm/° C. or less at about... Agent:
20130113120 - Semiconductor device and manufacturing method of semiconductor device: A semiconductor device includes a metal substrate; a semiconductor element placed on the metal substrate; a flexible circuit substrate that has one end placed on the metal substrate and is electrically connected to the semiconductor element, the flexible circuit substrate extending over an edge of the metal substrate to outside... Agent:
20130113121 - Resin paste composition: The present invention relates to a resin paste composition including an organic compound, and a granular aluminum powder having an average particle diameter of from 2 to 10 μm and a flake-shaped silver powder having an average particle diameter of from 1 to 5 μm which are uniformly dispersed in... Agent:
20130113122 - Epoxy resin composition and semiconductor device: wherein R1 and R2 are independently hydrogen or alkyl having 1 to 4 carbon atoms and two or more R1s or two or more R2s are the same or different; a is integer of 0 to 4; b is integer of 0 to 4; c is integer of 0 to... Agent: Sumitomo Bakelite Co., Ltd.Previous industry: Fences
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