Active solid-state devices (e.g., transistors, solid-state diodes) patents - Monitor Patents
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Active solid-state devices (e.g., transistors, solid-state diodes)

Below are recently published patent applications awaiting approval from the USPTO. Recent week's RSS XML file available below.
Listing for abstract view: USPTO application #, Title, Abstract excerpt,Patent Agent. Listing format for list view: USPTO National Class full category number, title of the patent application.
  
04/10/2014 > 154 patent applications in 88 patent subcategories.

20140097395 - Resistive memory device fabricated from single polymer material: A polymer-based device comprising a substrate; a first electrode disposed on the substrate; an active polymer layer disposed on and in contact with the first electrode; and a second electrode disposed on and in contact with the active polymer layer, wherein the first and the second electrodes are organic electrodes... Agent: Saudi Basic Industries Corporation

20140097396 - Non-volatile memory device and manufacturing method thereof: wherein the side wall protective layer extends across the second electrode to a position which is above an upper end of the second electrode and below an upper end of the connection layer such that an upper end of the side wall protective layer is located above the upper end... Agent: Panasonic Corporation

20140097398 - Memristive devices and memristors with ribbon-like junctions and methods for fabricating the same: Memristive devices, memristors and methods for fabricating memristive devices are disclosed. In one aspect, a memristor includes a first electrode wire and a second electrode wire. The second electrode wire and the first electrode wire define an overlap area. The memristor includes an electrode extension in contact with the first... Agent:

20140097399 - Phase change memory structures and methods: Methods, devices, and systems associated with phase change material memory are described herein. In one or more embodiments, a method of forming a phase change material memory cell includes forming a number of memory structure regions, wherein the memory structure regions include a bottom electrode material and a sacrificial material,... Agent: Micron Technology, Inc.

20140097397 - Resistive memory device and memory apparatus and data processing system having the same: A resistive memory device includes a first electrode layer, a second electrode layer, and a first variable resistive layer and a second variable resistive layer stacked at least once between the first electrode layer and the second electrode layer. The first variable resistive material layer may include a metal nitride... Agent: Sk Hynix Inc.

20140097400 - Vertical transistor with hardening implantation: A vertical transistor includes a semiconductor wafer having a plurality of pillar structures extending orthogonally from the semiconductor wafer. Each pillar structure forms a vertical pillar transistor having a top surface and a side surface orthogonal to the top surface. Then a hardening ion species is implanted into the vertical... Agent: Seagate Technology LLC

20140097401 - Semiconductor structure for emitting light, and method for manufacturing such a structure: A semiconductor structure for emitting light including a substrate made of a first semi-conductor material having a first type of conductivity, a first electrical contact, a second semiconductor material, having a second type of conductivity to form a junction, a second electrical contact contacting the second semiconductor material, a polarizer... Agent: Commissariat A L'energie Atomique Et Aux Ene Alt

20140097402 - Semiconductor structure and method for forming the same: A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises: a substrate (1100); a plurality of convex structures (1200) formed on the substrate (1100), in which every two adjacent convex structures (1200) are separated by a cavity in a predetermined pattern, and the cavity... Agent: Tsinghua University

20140097403 - Tunneling field-effect transistor including graphene channel: According to example embodiments, a tunneling field-effect transistor (TFET) includes a first electrode on a substrate, a semiconductor layer on a portion of the first electrode, a graphene channel on the semiconductor layer, a second electrode on the graphene channel, a gate insulating layer on the graphene channel, and a... Agent:

20140097404 - Memory devices including graphene switching devices: A memory device includes a graphene switching device having a source electrode, a drain electrode and a gate electrode. The graphene switching device includes a Schottky barrier formed between the drain electrode and a channel in a direction from the source electrode toward the drain electrode. The memory device need... Agent:

20140097405 - Systems and devices for quantum processor architectures: Quantum processor architectures employ unit cells tiled over an area. A unit cell may include first and second sets of qubits where each qubit in the first set crosses at least one qubit in the second set. Each unit cell is positioned proximally adjacent at least one other unit cell.... Agent: D-wave Systems Inc.

20140097406 - Aryloxyalkylcarboxylate solvent compositions for inkjet printing of organic layers: a

20140097412 - Brightness enhanced self-luminous display: A brightness enhanced self-luminous type display including a self-luminous display panel and a brightness enhancement stacked layer is provided. The self-luminous display panel includes pixels arranged in array, wherein each pixel includes light-emitting sub-pixels displaying different colors. The brightness enhancement stacked layer is disposed on the self-luminous display panel. The... Agent: Industrial Technology Research Institute

20140097417 - Flexible display and method for manufacturing the same: A flexible display and a method for manufacturing the same are disclosed. The flexible display comprises a carrier; an interface layer disposed on a surface of the carrier; and an organic light-emitting diode layer disposed on the interface layer, wherein the interface layer has a thickness of 0.5 μm to... Agent: Innolux Corporation

20140097408 - Flexible display apparatus: A flexible display apparatus includes a flexible substrate having a bending area, and a non-bending area adjacent the bending area, and having a display area for realizing a visible image, a plurality of wirings at the bending area, and a plurality of insulating patterns between the flexible substrate and the... Agent: Samsung Display Co., Ltd.

20140097422 - Lighting device: For integration of light-emitting elements and for suppression of a voltage drop, plural stages of light-emitting element units provided over a substrate having an insulating surface and each including a plurality of light-emitting elements which is connected in parallel are connected in series. Further, besides a lead wiring with a... Agent: Semiconductor Energy Laboratory Co., Ltd.

20140097421 - Organic el display: Disclosed is a coated type organic EL display wherein the light extraction efficiencies of all organic light-emitting elements are improved even when the organic light-emitting elements have different organic light-emitting layers for respective emission colors. Specifically disclosed is an organic EL display which comprises a substrate and a red organic... Agent: Panasonic Corporation

20140097425 - Organic el element, organic el panel having organic el element, organic el light-emitting apparatus, and organic el display apparatus: An organic EL element comprises: an anode; a cathode; a buffer layer; and a hole injection layer between the anode and the buffer layer. The hole injection layer includes a nickel oxide that includes both nickel atoms with a valence of three and nickel atoms with a valence of two.... Agent: Panasonic Corporation

20140097427 - Organic electroluminescence element and production method therefor: The organic electroluminescence element of the present invention includes: a first substrate; a second substrate facing the first substrate; an element member between the first and second substrates; first and second extension electrodes on first and second inner surfaces of the first and second substrates facing the element member; and... Agent: Panasonic Corporation

20140097420 - Organic light emitting diode display: An organic light emitting diode display includes: a pixel region; and a peripheral region surrounding the pixel region, the peripheral region including: a gate common voltage line; an interlayer insulating film that covers the gate common voltage line and has a common voltage contact hole exposing part of the gate... Agent:

20140097409 - Organic light emitting diode display and manufacturing method thereof: An organic light emitting diode display includes: a substrate, an insulating layer on the substrate; a plurality of pixel electrodes on the insulating layer; a pixel defining layer on the insulating layer overlapping with an end of at least one of the pixel electrodes and defining an emission region and... Agent: Samsung Display Co., Ltd.

20140097415 - Organic light emitting diode display and method for manufacturing organic light emitting diode display: An organic light emitting diode (OLED) display is disclosed. In one aspect, the display includes a substrate, an organic light emitting element positioned on the substrate, and a first thin film transistor (TFT) connected to the organic light emitting element and having a driving channel region including at least one... Agent:

20140097418 - Organic light emitting diode display and method for manufacturing the same: An organic light emitting diode (OLED) display including a substrate, a plurality of organic light emitting diodes placed on the substrate and each configured to include a first electrode, an organic emission layer, and a second electrode, a filling film placed on the substrate and configured to include an opening... Agent: Samsung Display Co., Ltd.

20140097419 - Organic light emitting diode display and method for manufacturing the same: An organic light emitting diode (OLED) display includes a substrate, a first signal line on the substrate, a first thin film transistor connected to the first signal line, a second thin film transistor connected to the first thin film transistor, an interlayer insulating layer on the first thin film transistor... Agent:

20140097413 - Organic light emitting diode display panel and method for manufacturing the same: Embodiments of the present invention provide an organic light emitting diode display panel and a method for manufacturing the same. The manufacturing method comprises: coating a photoresist layer on a transparent substrate with an active array formed; performing exposure on the photoresist layer from one side of the transparent substrate... Agent: Boe Technology Group Co., Ltd.

20140097407 - Organic light emitting display apparatus and method of manufacturing the same: An organic light emitting display apparatus and a method of manufacturing the same. The organic light emitting display apparatus includes a substrate; an insulating layer formed on the substrate and including a groove; a first electrode formed on the insulating layer so as to overlap at least with the groove;... Agent: Samsung Display Co., Ltd.

20140097414 - Organic light emitting display device and method of manufacturing the same: An organic light emitting display device includes a substrate in which a first pixel area and a second pixel area different from each other are defined, a first electrode, a pixel defining layer, a common layer, a first surface processing layer, a second surface processing layer, a first liquid solution... Agent:

20140097411 - Organic light-emitting display device and method of manufacturing the same: An organic light-emitting display device may include a plurality of scan lines, a plurality of data lines, and a plurality of pixels located at an intersection region of the scan line and the data line, wherein the organic light-emitting display device includes a thin film transistor including a gate electrode... Agent:

20140097423 - Organic light-emitting element and light-emitting device including same: The present invention relates to an organic light-emitting element comprising a first electrode, a second electrode, and an organic layer interposed between said first electrode and said second electrode, and to a light-emitting device including the same, wherein in the organic light-emitting element, a connection electrode for electrically connecting two... Agent: Lg Chem, Ltd.

20140097416 - Organic photoelectric device and image sensor: An organic photoelectric device may include a first electrode and a second electrode facing each other and an active layer between the first electrode and the second electrode, the active layer including a compound represented by Chemical Formula 1 and a compound represented by Chemical Formula 2. An image sensor... Agent:

20140097424 - Planar light emitting device having structure for brightness uniformity and a compact area of non-light emitting part: Planar light emitting device includes: anode and cathode feeding parts formed on first surface side of transparent substrate and electrically connected to quadrilateral planar anode and cathode, respectively; quadrilateral frame shaped anode auxiliary electrode formed at the whole circumference of surface of the planar anode; anode feeding auxiliary electrode integrally... Agent: Panasonic Corporation

20140097410 - Thin film transistor substrate, method of repairing the thin film transistor substrate, organic light emitting display apparatus, and method of repairing the organic light emitting display apparatus: A thin film transistor substrate includes a capacitor including a first capacitor electrode and a second capacitor electrode on a substrate, a first wire connected to the first capacitor electrode, a second wire connected to the second capacitor electrode, a first conductive pattern layer spaced apart from the first capacitor... Agent:

20140097426 - Transistors: This invention comprises a field effect transistor which comprises source and drain electrodes (01) which are bridged by a semiconductor which comprises semiconducting crystallites, the conductivity of the semiconductor being controlled by a gate electrode (02) which is insulated from the semiconductor and the source and drain electrodes, to which... Agent: Cpi Innovation Services Limited

20140097428 - Oxide semiconductor film, transistor, and semiconductor device: To provide an oxide semiconductor film which has high stability and does not easily cause variation in electric characteristics of a transistor, a transistor including the oxide semiconductor film in its channel formation region, and a highly reliable semiconductor device including the transistor. The oxide semiconductor film including indium includes... Agent: Semiconductor Energy Laboratory Co., Ltd.

20140097430 - Array substrate for flexible display device: An array substrate for a flexible display device, the array substrate including a mother substrate, a plurality of display units separated on the mother substrate, in which the plurality of display units include display regions that display images and non-display regions that extend from the display regions to edges of... Agent:

20140097429 - Array substrate for flexible display device and method of manufacturing the array substrate: In an aspect, an array substrate for a flexible display device and a method of manufacturing the array substrate, the method including operations of arranging at least one lower protective film on which a plurality of display units that are covered by thin-film encapsulation (TFE) units are arrayed; performing half... Agent: Samsung Display Co., Ltd.

20140097431 - Semiconductor devices and processing methods: A method for processing a semiconductor device in accordance with various embodiments may include: providing a semiconductor device having a first pad and a second pad electrically disconnected from the first pad; applying at least one electrical test potential to at least one of the first pad and the second... Agent: Infineon Technologies Ag

20140097432 - Sheet of semiconducting material, laminate, and system and methods for forming same: Methods of forming a laminate comprising a sheet of semiconductor material utilize a system. The system comprises a fibrous sheet, a guide member for guiding the fibrous sheet, and a melt of a semiconductor material. The sheet of semiconductor material and a laminate comprising the fibrous sheet and the sheet... Agent: Corning Incorporated

20140097433 - Semiconductor device and method of manufacturing the device: A semiconductor device includes a substrate; a carrier traveling layer formed on the substrate, made of first group III nitride semiconductor, and containing carriers traveling in a direction along a principal surface of the substrate; a barrier layer formed on the carrier traveling layer and made of second group III... Agent: Panasonic Corporation

20140097434 - Back-end-of-line metal-oxide-semiconductor varactors: Device structures, design structures, and fabrication methods for a varactor. The device structure includes a first electrode formed on a dielectric layer, and a semiconductor body formed on the first electrode. The semiconductor body is comprised of a silicon-containing semiconductor material in an amorphous state or a polycrystalline state. The... Agent: International Business Machines Corporation

20140097435 - Nand memory constructions and methods of forming nand memory constructions: Some embodiments include NAND memory constructions. The constructions may contain semiconductor material pillars extending upwardly between dielectric regions, with individual pillars having a pair of opposing vertically-extending sides along a cross-section. First conductivity type regions may be along first sides of the pillars, and second conductivity type regions may be... Agent: Micron Technology, Inc.

20140097438 - Light emitting device: An object of the present invention is to provide a light emitting device in which variations in an emission spectrum depending on a viewing angle with respect to a side from which luminescence is extracted are decreased. A light emitting device according to the invention has a transistor, an insulating... Agent: Semiconductor Energy Laboratory Co., Ltd.

20140097437 - Thin film transistor, display device and manufacturing thereof, display apparatus: A thin-film transistor (TFT) comprises a gate electrode, a gate insulating layer, a source electrode and a drain electrode which are formed on a base substrate, the source electrode and the drain electrode are disposed on different layers and isolated from each other through a semiconductor connecting section made of... Agent: Boe Technology Group Co., Ltd.

20140097436 - Thin-film transistor pixel structure and manufacturing method thereof: A thin-film transistor (TFT) pixel structure and manufacturing method thereof are described. The TFT pixel structure includes a substrate, first conducting layer, gate insulation layer, channel layer, second conducting layer, contact holes, passivation layer and transparent conducting layer. The method includes: forming gate insulation layer on substrate and covering scan... Agent: Shenzhen China Star Optoelectronics Technology Co.,ltd.

20140097439 - Thin-film transistor array substrate and display device including the same: A TFT array substrate includes: a first insulation layer over a semiconductor layer; a second insulation layer over a plurality of first gate wires formed on the first insulation layer; a third insulation layer over a plurality of second gate wires formed on the second insulation layer; a cover metal... Agent: Samsung Display Co., Ltd.

20140097440 - Flexible display panel: A flexible display panel includes a first display region that is flat, second display regions located at both sides of the first display region and curved by a predetermined angle, a plurality of pixels formed in the first display region, and a plurality of pixels formed in the second display... Agent:

20140097441 - Devices, systems, and methods related to removing parasitic conduction in semiconductor devices: Semiconductor devices and methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a stack of semiconductor materials from an epitaxial substrate, where the stack of semiconductor materials defines a heterojunction, and where the stack of semiconductor materials and the epitaxial... Agent: Micron Technology, Inc.

20140097446 - Gallium nitride devices with gallium nitride alloy intermediate layer: The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in... Agent: International Rectifier Corporation

20140097442 - Nitride semiconductor device: A nitride semiconductor device includes a silicon substrate, a nucleation layer, a first buffer layer, a first type nitride semiconductor layer, a light-emitting layer and a second type nitride semiconductor layer is provided. The nucleation layer is disposed on the silicon substrate. The first buffer layer is disposed on the... Agent: Industrial Technology Research Institute

20140097443 - Nitride semiconductor device: A nitride semiconductor device includes a silicon substrate, a nucleation layer, a buffer layer, a first type nitride semiconductor stacked layer, a light-emitting layer and a second type nitride semiconductor layer. The nucleation layer is disposed on the silicon substrate. The buffer layer is disposed on the nucleation layer. The... Agent: Industrial Technology Research Institute

20140097444 - Nitride semiconductor device: A nitride semiconductor device includes a silicon substrate, a nucleation layer, a buffer layer, a first type nitride semiconductor layer, a light-emitting layer and a second type nitride semiconductor layer is provided. The nucleation layer is disposed on the silicon substrate. The buffer layer is disposed on the nucleation layer.... Agent: Industrial Technology Research Institute

20140097445 - Semiconductor device: A transistor SEL is formed by using a compound semiconductor layer (channel layer CNL). The channel layer CNL is formed over a buffer layer BUF. In a first direction where a drain electrode DRE, a gate electrode GE, and a source electrode SOE of the transistor SEL are arranged, at... Agent: Renesas Electronics Corporation

20140097450 - Diffused junction termination structures for silicon carbide devices: An electronic device includes a silicon carbide layer having a first conductivity type and a main junction adjacent a surface of the silicon carbide layer, and a junction termination region at the surface of the silicon carbide layer adjacent the main junction. Charge in the junction termination region decreases with... Agent: Cree, Inc.

20140097449 - Semiconductor device: According to one embodiment, a semiconductor device includes a semiconductor layer, an electrode, and an insulating portion. The semiconductor layer has a first surface. The electrode is provided on the first surface of the semiconductor layer. The insulating portion includes a first layer and a second layer. The first layer... Agent: Kabushiki Kaisha Toshiba

20140097447 - Semiconductor device and method of manufacturing the same: Disclosed herein is a semiconductor device and method of manufacturing the semiconductor, including an n type buffer layer disposed on a first surface of an n+ type silicon carbide substrate, an n− type epitaxial layer disposed on the n type buffer layer, a first type of trench disposed on each... Agent: Hyundai Motor Company

20140097448 - Semiconductor device and method of manufacturing the same: A semiconductor device includes a drift layer including a trench formed on a semiconductor substrate. A well in the drift layer overlaps an edge of the trench, and at least one gate electrode is formed at this overlapping edge region. The drift layer and semiconductor may be doped with a... Agent: Samsung Electronics Co., Ltd.

20140097451 - Proximity sensor and circuit layout method thereof: A proximity sensor and a circuit layout method thereof are disclosed. The proximity sensor includes a light sensor and a light emitting unit. The light sensor includes a semiconductor substrate and a bonding pad. The semiconductor substrate has a first circuit region. At least one semiconductor device is disposed in... Agent: Upi Semiconductor Corp.

20140097453 - Light emitting devices for light emitting diodes (leds): Light emitting devices for light emitting diodes (LEDs) are disclosed. In one embodiment a light emitting device can include a substrate, one or more LEDs disposed over the substrate, and the LEDs can include electrical connectors for connecting to an electrical element. A light emitting device can further include a... Agent:

20140097454 - Light emitting devices for light emitting diodes (leds): Light emitting devices for light emitting diodes (LEDs) are disclosed. In one embodiment a light emitting device can include a submount and a light emission area disposed over the submount. The light emission area can include one or more light emitting diodes (LEDs), a fillet at least partially disposed about... Agent: Cree, Inc.

20140097452 - Luminescence device: A luminescence device used in a backlight unit for lighting or displaying may include: a substrate including at least two electrode patterns and LED chips which are provided over the substrate and include a phosphor provided thereon. A dam is provided over the substrate, and an encapsulation layer is provided... Agent:

20140097455 - Semiconductor device and display apparatus: A semiconductor device according to an aspect of the present invention includes: a semiconductor layer including a channel region and a contact region; a pattern of a first conducting layer disposed at a position which overlaps with the channel region; a gate line formed in one of a second conducting... Agent: Panasonic Corporation

20140097456 - Nitride semiconductor light-emitting device and method for producing the same: A method for producing a light-emitting device includes the steps of: forming a layer containing In on a substrate in a reactor in which a Mg-containing raw material has been used; and forming an active layer including a nitride semiconductor on the layer containing In.... Agent: Canon Kabushiki Kaisha

20140097460 - Led device: An LED device comprises a substrate, an LED chip and a luminescent conversion layer. The substrate comprises a first electrode, a second electrode and a reflector located on top faces of the first and the second electrodes. The LED chip is disposed on the first electrode and electrically connected to... Agent: Advanced Optoelectronic Technology, Inc.

20140097459 - Optical element module, optical transmission module, and method of manufacturing optical transmission module: An optical element module includes an optical element having a light receiving unit configured to input an optical signal or a light emitting unit configured to output an optical signal, a board on which the optical element is mounted, and a guide holding member that has a through hole into... Agent: Olympus Corporation

20140097461 - Phosphor sheet-forming resin composition: A phosphor sheet-forming resin composition uses a low-cost resin material having high light fastness and low visible light absorption and is capable of providing a phosphor sheet at low cost with deterioration of a phosphor due to moisture being suppressed. The phosphor sheet-forming resin composition contains a film-forming resin composition... Agent: Dexerials Corporation

20140097457 - Semiconductor device: A semiconductor device includes a substrate and a semiconductor unit. The substrate includes a base and at least one pattern unit. The pattern unit includes a plurality of surrounding members disposed on the base and a central member surrounded by the surrounding members. A geometrical center is collectively defined by... Agent: Microhertz Technologies Co., Ltd.

20140097458 - Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same: There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and... Agent: Samsung Electronics Co., Ltd.

20140097463 - Anisotropic conductive adhesive: e

20140097462 - Semiconductor light-emitting apparatus and method of fabricating the same: A light-emitting apparatus has a light-emitting device and a supporting board. The light-emitting device has a pair of n-electrodes with a p-electrode therebetween, on the same plane. The supporting board includes an insulating substrate on which positive and negative electrodes are formed, opposing to the p- and n-electrodes of the... Agent: Nichia Corporation

20140097464 - Electronic device for protection against electrostatic discharges, with a concentric structure: The component incorporates, in topological terms, a scalable number of triac structures in a concentric annular arrangement. The component can be used with an electronic device to protect against electrostatic discharges. For example, the components can be used to protect the input/output pad, the first power supply terminal, and the... Agent:

20140097465 - Silicon controlled rectifier (scr) device for bulk finfet technology: Some aspects relate to a semiconductor device disposed on a semiconductor substrate. The device includes an STI region that laterally surrounds a base portion of a semiconductor fin. An anode region, which has a first conductivity type, and a cathode region, which has a second conductivity type, are arranged in... Agent:

20140097466 - Semiconductor device and method for manufacturing the semiconductor device: A semiconductor device includes a p-type collector region, a drift region arranged on the collector region, a base region arranged on the drift region, an emitter region arranged on the base region, a gate oxide film arranged on the bottom surface and side surface of a trench which penetrates the... Agent: Sanken Electric Co., Ltd.

20140097467 - Compressively strained soi substrate: A method of forming a strained silicon-on-insulator includes forming a first wafer having a compressively strained active semiconductor layer, forming a second wafer having an insulation layer formed above a bulk semiconductor layer, and bonding the compressively strained active semiconductor layer of the first wafer to the insulation layer of... Agent:

20140097468 - Nitride semiconductor device and method for manufacturing same: A nitride semiconductor device includes: a substrate; a first nitride semiconductor layer (1) located over the substrate; a second nitride semiconductor layer (2) located over the first nitride semiconductor layer (1), having a larger band gap than the first nitride semiconductor layer (1), and having a recess (11) penetrating into... Agent: Panasonic Corporation

20140097471 - Active area shaping of iii-nitride devices utilizing a field plate defined by a dielectric body: In an exemplary implementation, a III-nitride semiconductor device includes a III-nitride heterojunction including a first III-nitride body situated over a second III-nitride body to form a two-dimensional electron gas. The III-nitride semiconductor device further includes a gate well formed in a dielectric body, the dielectric body situated over the III-nitride... Agent: International Rectifier Corporation

20140097470 - High-electron mobility transistor and method of manufacturing the same: According to example embodiments, a HEMT includes a channel supply layer on a channel layer, a p-type semiconductor structure on the channel supply layer, a gate electrode on the p-type semiconductor structure, and source and drain electrodes spaced apart from two sides of the gate electrode respectively. The channel supply... Agent:

20140097469 - Hydrogen mitigation schemes in the passivation of advanced devices: Embodiments of a Silicon Nitride (SiN) passivation structure for a semiconductor device and methods of fabrication thereof are disclosed. In general, a semiconductor device includes a semiconductor body and a SiN passivation structure over a surface of the semiconductor body. In one embodiment, the SiN passivation structure includes one or... Agent:

20140097472 - Bipolar field effect transistor structures and methods of forming the same: Bipolar field effect transistor (BiFET) structures and methods of forming the same are provided. In one embodiment, an apparatus includes a substrate and a plurality of epitaxial layers disposed over the substrate. The plurality of epitaxial layers includes a first epitaxial layer, a second epitaxial layer disposed over the first... Agent: Skyworks Solutions, Inc.

20140097473 - Semiconductor device: A semiconductor device includes: an electron transit layer formed on a substrate and of a group III nitride-based compound semiconductor; an electron supply layer formed on the electron transit layer and of a group III nitride-based compound semiconductor having a higher band gap energy than the transit layer; a field... Agent:

20140097474 - Spin mosfet and reconfigurable logic circuit: A spin MOSFET includes a first ferromagnetic layer having a fixed magnetization direction, a first tunnel barrier, a second ferromagnetic layer having a variable magnetization direction, and a nonmagnetic semiconductor layer provided in that order on a substrate. The nonmagnetic semiconductor layer has lower and upper faces and a side... Agent: Kabushiki Kaisha Toshiba

20140097475 - Integrated circuit packaging system with coreless substrate and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: forming a first metal layer on a carrier; forming an insulation layer directly on the first metal layer; exposing a portion of the first metal layer for directly attaching to a die interconnect connecting to an integrated circuit; forming... Agent:

20140097476 - Solid-state imaging apparatus and electronic apparatus: A solid-state imaging apparatus includes a charge accumulation unit, a signal voltage detection unit, a transfer transistor, and a pinning layer. The charge accumulation unit accumulates photoelectrically converted charges, and is formed on a silicon substrate. The signal voltage detection unit detects signal voltage corresponding to the charges accumulated in... Agent: Sony Corporation

20140097477 - Magnetic random access memory and a method of fabricating the same: An aspect of the present embodiment, there is provided magnetic random access memory device including a semiconductor substrate, a selection transistor on the semiconductor substrate, the selection transistor including a diffusion layer, a contact plug on diffusion layer, an amorphous film on the contact plug, a lower electrode provided on... Agent: Kabushiki Kaisha Toshiba

20140097478 - Reduced charge transistor: Representative implementations of devices and techniques provide a reduced charge transistor arrangement. The capacitance and/or charge of a transistor structure may be reduced by minimizing an overlap of a top gate with respect to a drain of the transistor.... Agent: Infineon Technologies Austria Ag

20140097479 - Pillars for vertical transistors: In order to form a more stable silicon pillar which can be used for the formation of vertical transistors in DRAM cells, a multi-step masking process is used. In a preferred embodiment, an oxide layer and a nitride layer are used as masks to define trenches, pillars, and active areas... Agent: Micron Technology, Inc.

20140097480 - Method for manufacturing a memory cell, a method for manufacturing a memory cell arrangement, and a memory cell: A method for manufacturing a memory cell in accordance with various embodiments may include: forming at least one charge storing memory cell structure over a substrate, the charge storing memory cell structure having a first sidewall and a second sidewall opposite the first sidewall; forming an electrically conductive layer over... Agent: Infineon Technologies Ag

20140097481 - Non-volatile memory with vertical selection transistors: The present disclosure relates to a method for manufacturing a non-volatile memory on a semiconductive substrate, comprising the steps of implanting in the depth of the substrate a first doped region forming a source region of selection transistors, forming in the substrate a buried gate comprising deep parts extending between... Agent: Stmicroelectronics (rousset) Sas

20140097482 - Full metal gate replacement process for nand flash memory: A NAND flash memory chip is made by forming sacrificial control gate structures and sacrificial select structures, and subsequently replacing these sacrificial structures with metal. Filler structures are formed between sacrificial control gate structures and are subsequently removed to form air gaps between neighboring control gate lines and between floating... Agent: Sandisk Technologies Inc.

20140097483 - 3-d single floating gate non-volatile memory device: A 3-D Single Floating Gate Non-Volatile Memory (SFGNVM) device based on the 3-D fin Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) is disclosed. The disclosed Non-Volatile Memory (NVM) device consists of a pair of semiconductor fins and one floating metal gate. The floating metal gate for storing electrical charges to alter the... Agent: Flashsilicon Incorporation

20140097484 - Vertical type memory device: A semiconductor device, comprising: a plurality of memory cell strings; a bitline; and an interconnection coupling at least two of the memory cell strings to the bitline. Memory cell strings can be coupled to corresponding bitlines through corresponding interconnections. Alternate memory cell strings can be coupled to different bitlines through... Agent:

20140097485 - Nonvolatile semiconductor memory device and method for manufacturing same: According to one embodiment, a nonvolatile semiconductor memory device includes a first stacked structure body, a first semiconductor layer, a first organic film, a first semiconductor-side insulating film, and a first electrode-side insulating film. The first stacked structure body includes a plurality of first electrode films stacked along a first... Agent: Kabushiki Kaisha Toshiba

20140097486 - Semiconductor constructions, nand unit cells, methods of forming semiconductor constructions, and methods of forming nand unit cells: Some embodiments include methods of forming semiconductor constructions. Alternating layers of n-type doped material and p-type doped material may be formed. The alternating layers may be patterned into a plurality of vertical columns that are spaced from one another by openings. The openings may be lined with tunnel dielectric, charge-storage... Agent:

20140097487 - Plasma doping a non-planar semiconductor device: In plasma doping a non-planar semiconductor device, a substrate having a non-planar semiconductor body formed thereon is obtained. The substrate having the non-planar semiconductor body may be placed into a chamber. A plasma may be formed in the chamber and the plasma may contain dopant ions. A first bias voltage... Agent: Advanced Ion Beam Technology, Inc.

20140097488 - Method for producing a semiconductor device and field-effect semiconductor device: A method for producing a semiconductor device is provided. The method includes providing a wafer including a main surface and a silicon layer arranged at the main surface and having a nitrogen concentration of at least about 3*1014 cm−3, and partially out-diffusing nitrogen to reduce the nitrogen concentration at least... Agent:

20140097490 - Semiconductor device: A semiconductor substrate of a semiconductor device includes a body region of a first conductivity type, a drift region of a second conductivity type coming into contact with a lower surface of the body region, a gate electrode that is provided in a gate trench passing through the body region... Agent: Toyota Jidosha Kabushiki Kaisha

20140097489 - Semiconductor device having localized charge balance structure and method: In one embodiment, a semiconductor device has a superjunction structure formed adjoining a low-doped n-type region. A low-doped p-type region is formed adjoining the superjunction structure above the low-doped n-type region and is configured to improve Eas characteristics. A body region is formed adjacent the low-doped p-type region and a... Agent: Semiconductor Components Industries, LLC

20140097491 - Dielectrically terminated superjunction fet: A dielectrically-terminated superjunction field-effect transistor (FET) architecture for use in high voltage applications. The architecture adds a dielectric termination to general features of a high voltage superjunction process. The dielectrically-terminated FET (DFET) is more compact and more manufacturable than a conventional, semiconductor-terminated superjunction FET.... Agent: Texas Instruments Incorporated

20140097492 - Semiconductor structure: A semiconductor structure is provided. The semiconductor structure includes a semiconductor substrate, a dielectric layer, a dielectric structure and an electrode structure. The dielectric layer is on an upper substrate surface of the semiconductor substrate. The dielectric structure and the semiconductor substrate have opposing first and second interfaces therebetween. The... Agent: United Microelectronics Corp.

20140097493 - Cells including at least one fin field effect transistor and semiconductor integrated circuits including the same: A semiconductor integrated circuit (IC) may comprise at least one cell comprising at least one fin field-effect transistor (FET). The at least one cell may comprise a plurality of fins that extend in a first direction and are arranged in parallel to each other in a second direction that is... Agent: Samsung Electronics Co., Ltd.

20140097495 - Apparatus and methods for improving multi-gate device performance: Embodiments of an apparatus and methods for improving multi-gate device performance are generally described herein. Other embodiments may be described and claimed.... Agent:

20140097494 - Method for producing semiconductor device and semiconductor device: A method for producing a semiconductor device includes forming a fin-shaped silicon layer, a first insulating film around the fin-shaped silicon layer, a pillar-shaped silicon layer on the fin-shaped silicon layer, a gate electrode and a gate insulating film around the pillar-shaped silicon layer, a gate line connected to the... Agent: Unisantis Electronics Singapore Pte. Ltd.

20140097496 - Guard rings on fin structures: A device includes a semiconductor substrate, isolation regions extending into the semiconductor substrate, a plurality of semiconductor fins higher than top surfaces of the isolation regions, and a plurality of gate stacks. Each of the gate stacks includes a gate dielectric on a top surface and sidewalls of one of... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20140097498 - Open source power quad flat no-lead (pqfn) leadframe: According to an exemplary implementation, a power quad flat no-lead (PQFN) leadframe includes U-phase, V-phase, and W-phase power switches situated on the PQFN leadframe. A drain of the U-phase power switch is connected to a U-phase output strip of the PQFN leadframe. A source of the U-phase power switch is... Agent: International Rectifier Corporation

20140097499 - Semiconductor structures: Methods of pitch doubling of asymmetric features and semiconductor structures including the same are disclosed. In one embodiment, a single photolithography mask may be used to pitch double three features, for example, of a DRAM array. In one embodiment, two wordlines and a grounded gate over field may be pitch... Agent: Micron Technology, Inc.

20140097497 - Spacer design to prevent trapped electrons: Charge-trapping field effect transistors may be formed into an array on a wafer suitable to be a NAND memory device. A thick oxide layer is applied over the gates to ensure that the gap between the gates is filled. The filled gap substantially prevents nitride from being trapped, which could... Agent: Spansion LLC

20140097500 - Semiconductor device: A semiconductor device includes a first planar semiconductor (e.g., silicon) layer, first and second pillar-shaped semiconductor (e.g., silicon) layers, a first gate insulating film, a first gate electrode, a second gate insulating film, a second gate electrode, a first gate line connected to the first and second gate electrodes, a... Agent:

20140097501 - Integrated power module for multi-device parallel operation: An integrated power module having a dielectric substrate, a source conductor trace formed on the dielectric substrate, a drain conductor trace formed on the dielectric substrate, a gate conductor trace formed on the dielectric substrate, a transistor chip having a top surface and a bottom surface connected to the drain... Agent: Toyota Motor Engineering & Manufacturing North America, Inc.

20140097502 - Semiconductor device and fabricating method thereof: A semiconductor device has gate-all-around devices formed in respective regions on a substrate. The gate-all-around devices have nanowires at different levels. The threshold voltage of a gate-all-around device in first region is based on a thickness of an active layer in an adjacent second region. The active layer in the... Agent: Samsung Electronics Co., Ltd.

20140097503 - Memory cell array with semiconductor selection device for multiple memory cells: A memory array that includes access devices that are each electrically coupled to more than one memory cell. The memory cells are coupled to the access devices via diode devices. The access devices include vertical semiconductor material mesas upstanding from a semiconductor base that form a conductive channel between first... Agent: Micron Technology, Inc.

20140097506 - Fin field effect transistor, and method of forming the same: The description relates to a fin field effect transistor (FinFET). An exemplary structure for a FinFET includes a fin having a first height above a first surface of a substrate, where a portion of the fin has first tapered sidewalls, and the fin has a top surface. The FinFET further... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20140097504 - Method for depositing a low-diffusion tialn layer and insulated gate comprising such a layer: A method for forming an aluminum titanium nitride layer on a wafer by plasma-enhanced physical vapor deposition including a first step at a radio frequency power ranging between 100 and 500 W only, and a second step at a radio frequency power ranging between 500 and 1,000 W superimposed to... Agent:

20140097505 - Semiconductor device having nitride layers: According to one embodiment, a second nitride semiconductor layer is provided on a first nitride semiconductor layer and has a band gap wider than that of the first nitride semiconductor layer. A third nitride semiconductor layer is provided above the second nitride semiconductor layer. A fourth nitride semiconductor layer is... Agent: Kabushiki Kaisha Toshiba

20140097507 - Semiconductor device having a metal gate and fabricating method thereof: The present invention provides a method of forming a semiconductor device having a metal gate. A substrate is provided and a gate dielectric and a work function metal layer are formed thereon, wherein the work function metal layer is on the gate dielectric layer. Then, a top barrier layer is... Agent: United Microelectronics Corp.

20140097508 - Accelerometer and its fabrication technique: An accelerometer has E-shaped resilient beams to isolate stress and reduce deformation. A top cap silicon wafer and a bottom cap silicon wafer are both coupled with a measurement mass to form a capacitor. The measurement mass has a mass, range-of-motion stops, and resilient beams located within a support frame.... Agent: Chinese Academy Of Sciences Institute Of Geology And Geophysics

20140097509 - Magnetic memory element and magnetic memory: A disclosed magnetic memory element includes: a magnetization free layer formed of a ferromagnetic substance having perpendicular magnetic anisotropy; a response layer provided so as to be opposed to the magnetization free layer and formed of a ferromagnetic substance having perpendicular magnetic anisotropy; a non-magnetic layer provided so as to... Agent: Tohoku University

20140097510 - Photodiode and method for producing the same, photodiode array, spectrophotometer and solid-state imaging device: Provided is a photodiode having a high-concentration layer on its surface, in which the high-concentration layer is formed so that the thickness of a non-depleted region is larger than the roughness of an interface between silicon and an insulator layer, and is smaller than a penetration depth of ultraviolet light.... Agent: Tohoku University

20140097511 - Integrated diode array and corresponding manufacturing method: An integrated diode array and a corresponding manufacturing method are provided. The integrated diode array includes a substrate having an upper side, and a plurality of blocks of several diodes, which are positioned in a planar manner and are suspended at the substrate above a cavity situated below them in... Agent: Robert Bosch Gmbh

20140097512 - Hybrid semiconductor module structure: Some implementations provide a structure that includes a first package substrate, a first component, a second package substrate, a second component, and a third component. The first package substrate has a first area. The first component has a first height and is positioned on the first area. The second package... Agent: Qualcomm Incorporated

20140097513 - Package-on-package type package including integrated circuit devices and associated passive components on different levels: A package-on-package (PoP)-type package includes a first semiconductor package having a first passive element and a first semiconductor device mounted on a first substrate, and a second semiconductor package having a second semiconductor device mounted on a second substrate. The first passive element is electrically connected to the second semiconductor... Agent:

20140097515 - Compound semiconductor integrated circuit with three-dimensionally formed components: A compound semiconductor integrated circuit with three-dimensionally formed components, such as three-dimensionally formed bond pads or inductors, positioned above an electronic device. The dielectric layer inserted between the electronic device and the bond pads or inductors thereon has a thickness between 10 to 30 microns, so that it can effectively... Agent: Win Semiconductors Corp.

20140097514 - Semiconductor package and method for fabricating the same: A semiconductor package includes a semiconductor chip, an inductor applied to the semiconductor chip. The inductor includes at least one winding. A space within the at least one winding is filled with a magnetic material.... Agent: Infineon Technologies Ag

20140097516 - High-voltage integrated metal capacitor and fabrication method: A high-voltage metal capacitor with easy integration into existing semiconductor manufacturing processes can provide isolation capacitors up to several kilovolts. The capacitor includes a support layer with internal structure, including a lower place, a bond pad on the support layer, an upper plate disposed on the support layer, the upper... Agent:

20140097517 - Semiconductor device having localized charge balance structure and method: In one embodiment, a semiconductor substrate is provided having a localized superjunction structure extending from a major surface. A doped region is then formed adjacent the localized superjunction structure to create a charge imbalance therein. In one embodiment, the doped region can be an ion implanted region formed within the... Agent: Semiconductor Components Industries, LLC

20140097518 - Semiconductor alloy fin field effect transistor: Semiconductor alloy fin structures can be formed by recessing a semiconductor material layer including a first semiconductor material to form a trench, and epitaxially depositing a semiconductor alloy material of the first semiconductor material and a second semiconductor material within the trench. The semiconductor alloy material is epitaxially aligned to... Agent: International Business Machines Corporation

20140097519 - Semiconductor device and method for fabricating the same: A method for fabricating a semiconductor device includes forming a first semiconductor wafer, in which a circuit part and a first bonding layer are stacked, on a first semiconductor substrate, forming a second semiconductor wafer, which includes structures and an insulating layer for gap-filling between the structures, on a second... Agent: Sk Hynix Inc.

20140097520 - Methods of forming an array of openings in a substrate, related methods of forming a semiconductor device structure, and a related semiconductor device structure: A method of forming an array of openings in a substrate. The method comprises forming a template structure comprising a plurality of parallel features and a plurality of additional parallel features perpendicularly intersecting the plurality of additional parallel features of the plurality over a substrate to define wells, each of... Agent: Micron Technology, Inc.

20140097521 - Silicon on nothing devices and methods of formation thereof: In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes forming a first cavity within a substrate. The first cavity is disposed under a portion of the substrate. The method further includes forming a first pillar within the first cavity to support the... Agent: Infineon Technologies Dresden Gmbh

20140097522 - Methods and apparatus for identifying and reducing semiconductor failures: The present disclosure provides multi-junction solar cell structures and fabrication methods thereof that improve electrical testing capability and reduce chip failure rates. In the present invention a special masking pattern is used in the layout such that all or some of the epitaxial layers are etched away in the corner... Agent: Solar Junction Corporation

20140097523 - Method for manufacturing bonded wafer and bonded soi wafer: A method for manufacturing a bonded wafer includes: an ion implantation step of using a batch type ion implanter; a bonding step of bonding an ion implanted surface of a bond wafer to a surface of a base wafer directly or through an insulator film; and a delamination step of... Agent: Shin-etsu Handotai Co., Ltd.

20140097524 - Coplanar waveguide for stacked multi-chip systems: An approach for a coplanar waveguide structure in stacked multi-chip systems is provided. A method of manufacturing a semiconductor structure includes forming a first coplanar waveguide in a first chip. The method also includes forming a second coplanar waveguide in a second chip. The method further includes directly connecting the... Agent: International Business Machines Corporation

20140097525 - Circuit boards, methods of fabricating the same, and semiconductor packages including the circuit boards: Provided is a circuit board, which may include a base layer, an adhesive film, a conductive circuit, and a through via. The adhesive film and the conductive circuit may be provided in plurality to be alternately stacked on the base layer. The through via may be formed through soldering. Since... Agent: Electronics And Telecommunications Research Institute

20140097528 - Chip arrangements, a chip package and a method for manufacturing a chip arrangement: A chip package is provided. The chip package includes a chip carrier, a voltage supply lead, a sensing terminal and a chip disposed over the chip carrier. The chip includes a first terminal and a second terminal, wherein the first terminal electrically contacts the chip carrier. The chip package also... Agent: Infineon Technologies Ag

20140097530 - Integrated circuit package: An integrated circuit package and a manufacturing method thereof are provided. The integrated circuit package can include a substrate provided with a circuit pattern, a first set of bonding fingers and a second set of bonding fingers, a first chip stack mounted on the substrate and having a plurality of... Agent: Sts Semiconductor & Telecommunications Co., Ltd.

20140097527 - Method of manufacture integrated circuit package: An integrated circuit package may be formed using a leadframe having an open space extending therethrough. A shunt is located within the open space such that it is not in contact with any portion of the leadframe. Tape may be applied to the lower surface of the leadframe to support... Agent: Texas Instruments Incorporated

20140097526 - Packaged ic having printed dielectric adhesive on die pad: A method of assembling a packaged integrated circuit (IC) includes printing a viscous dielectric polymerizable material onto a die pad of a leadframe having metal terminals positioned outside the die pad. An IC die having a top side including a plurality of bond pads is placed with its bottom side... Agent: Texas Instruments Incorporated

20140097531 - Power quad flat no-lead (pqfn) package in a single shunt inverter circuit: According to an exemplary implementation, a power quad flat no-lead (PQFN) package includes a driver integrated circuit (IC) situated on a leadframe. The PQFN package further includes low-side U-phase, low-side V-phase, and low-side W-phase power switches situated on the leadframe. A logic ground of the leadframe is coupled to a... Agent: International Rectifier Corporation

20140097529 - Solder flow-impeding plug on a lead frame: Embodiments described herein relate to a method of manufacturing a packaged circuit having a solder flow-impeding plug on a lead frame. The method includes partially etching an internal surface of a lead frame at dividing lines between future sections of the lead frame as first partial etch forming a trench.... Agent: Intersil Americas LLC

20140097532 - Thermally enhanced package-on-package (pop): A method and structure for providing improved thermal management in multichip and package on package (PoP) applications. A first substrate attached to a second smaller substrate wherein the second substrate is encircled by a heat ring attached to the first substrate, the heat ring comprising heat conducting materials and efficient... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20140097533 - Pop package structure: A package on package (PoP) package structure is disclosed, the structure includes at least two layers of carrier boards that are packaged and stacked in sequence, wherein chips are arranged on the bottom side of the carrier boards, a heat sink is arranged on the bottom side of a carrier... Agent: Huawei Technologies Co., Ltd.

20140097534 - Dual-phase intermetallic interconnection structure and method of fabricating the same: Provided are a dual-phase intermetallic interconnection structure and a fabricating method thereof. The dual-phase intermetallic interconnection structure includes a first intermetallic compound, a second intermetallic compound, a first solder layer, and a second solder layer. The second intermetallic compound covers and surrounds the first intermetallic compound. The first intermetallic compound... Agent: Industrial Technology Research Institute

20140097535 - Stacked multi-chip integrated circuit package: A multi-chip integrated circuit (IC) package is provided which is configured to protect against failure due to warpage. The IC package may comprise a substrate, a level-one IC die and a plurality of level-two IC dies. The level-one IC die having a surface that is electrically coupled to the substrate.... Agent: Qualcomm Incorporated

20140097536 - Two-sided-access extended wafer-level ball grid array (ewlb) package, assembly and method: A two-sided-access (TSA) eWLB is provided that makes it possible to easily access electrical contact pads disposed on both the front and rear faces of the die(s) of the eWLB package. When fabricating the IC die wafer, metal stamps are formed in the IC die wafer in contact with the... Agent: Avago Technologies GeneralIP(singapore) Pte. Ltd

20140097537 - Thin film compositions and methods: Certain embodiments of the present invention include a versatile and scalable process, “patterned regrowth,” that allows for the spatially controlled synthesis of lateral junctions between electrically conductive graphene and insulating h-BN, as well as between intrinsic and substitutionally doped graphene. The resulting films form mechanically continuous sheets across these heterojunctions.... Agent:

20140097538 - Semiconductor device having a self-forming barrier layer at via bottom: An approach for forming a semiconductor device is provided. In general, the device is formed by providing a metal layer, a cap layer over the metal layer, and an ultra low k layer over the cap layer. A via is then formed through the ultra low k layer and the... Agent: Globalfoundries Inc.

20140097539 - Technique for uniform cmp: Pitch-dependent dishing and erosion following CMP treatment of copper features is quantitatively assessed by atomic force microscopy (AFM) and transmission electron microscopy (TEM). A new sequence of processing steps presented herein is used to prevent dishing and to reduce significantly the local pitch- and pattern density-induced CMP non-uniformity for copper... Agent:

20140097540 - Semiconductor structure: A semiconductor structure includes a silicon substrate, a titanium layer, a nickel layer, a silver layer and a metallic adhesion layer, wherein the silicon substrate comprises a back surface, and the titanium layer comprises an upper surface. The titanium layer is formed on the back surface, the nickel layer is... Agent: Chipbond Technology Corporation

20140097541 - Multilayer line trimming: Substantially simultaneous plasma etching of polysilicon and oxide layers in multilayer lines in semiconductors allows for enhanced critical dimensions and aspect ratios of the multilayer lines. Increasing multilayer line aspect ratios may be possible, allowing for increased efficiency, greater storage capacity, and smaller critical dimensions in semiconductor technologies.... Agent: Macronix International Co., Ltd.

20140097542 - Flip packaging device: Disclosed is a flip chip packaging device and structure of interconnections between a chip and a substrate. In one embodiment, a flip chip packaging device can include: (i) a chip and a substrate; (ii) a plurality of first connecting structures and a plurality of second connecting structures that are aligned... Agent: Silergy Semiconductor Technology (hangzhou) Ltd

20140097543 - Bonding of substrates including metal-dielectric patterns with metal raised above dielectric and structures so formed: Bonding of substrates including metal-dielectric patterns on a surface with the metal raised above the dielectric, as well as related structures, are disclosed. One structure includes: a first substrate having a metal-dielectric pattern on a surface thereof, the metal-dielectric pattern including: a metal having a concave upper surface; and a... Agent: International Business Machines Corporation

20140097546 - Multi-function and shielded 3d interconnects: A microelectronic unit includes a semiconductor element consisting essentially of semiconductor material and having a front surface, a rear surface, a plurality of active semiconductor devices adjacent the front surface, a plurality of conductive pads exposed at the front surface, and an opening extending through the semiconductor element. At least... Agent: Tessera, Inc.

20140097545 - Package structure and method for manufacturing package structure: Disclosed herein is a method for manufacturing a package structure. According to an exemplary embodiment of the present invention, the method for manufacturing a package structure includes: preparing a die having a metal pillar disposed on one surface thereof; bonding the die on the metal plate to allow the metal... Agent: Samsung Electro-mechanics Co., Ltd.

20140097544 - Side stack interconnection for integrated circuits and the like: In an illustrative embodiment, a plurality of integrated circuits are stacked one on top of the other in a block. A plurality of leads on each integrated circuit is made accessible on a first side of the block. An insulating layer is formed on the first side of the block;... Agent: Altera Corporation

20140097547 - Semiconductor device: This invention is to improve noise immunity to the power supply and ground of a wiring board and a second semiconductor chip in an interior of a semiconductor device. A first semiconductor chip is mounted over a wiring board, and a second semiconductor chip is mounted in a central part... Agent: Renesas Electronics Corporation

20140097548 - Semiconductor device connected by anisotropic conductive adhesive film: A semiconductor device connected using an anisotropic conductive adhesive composition, the anisotropic conductive adhesive composition including a thermosetting polymerization initiator; and tetrahydrofurfuryl (meth)acrylate or furfuryl (meth)acrylate, wherein the tetrahydrofurfuryl (meth)acrylate or furfuryl (meth)acrylate is present in the composition in an amount of 1 wt % to 25 wt %, based... Agent:

  
04/03/2014 > 214 patent applications in 91 patent subcategories.

20140091270 - Low energy memristors with engineered switching channel materials: Low energy memristors with engineered switching channel materials include: a first electrode; a second electrode; and a switching layer positioned between the first electrode and the second electrode, wherein the switching layer includes a first phase comprising an insulating matrix in which is dispersed a second phase comprising an electrically... Agent: Hewlett-packard Development Company, L.p.

20140091274 - Memory devices having unit cell as single device and methods of manufacturing the same: In one embodiment, a memory device includes a first electrode layer on a substrate; a data storing layer on the first electrode layer; and a second electrode layer on the data storing layer. At least one of the first and second electrode layers may be formed of a material having... Agent:

20140091271 - Resistance variable memory structure and method of forming the same: A semiconductor structure includes a resistance variable memory structure. The semiconductor structure also includes a dielectric layer. A portion of the resistance variable memory structure is over the dielectric layer. The resistance variable memory structure includes a first electrode embedded in the dielectric layer. A resistance variable layer disposed over... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20140091272 - Resistance variable memory structure and method of forming the same: A semiconductor structure includes a resistance variable memory structure. The semiconductor structure also includes a conductive structure. The resistance variable memory structure is over the conductive structure. The resistance variable memory structure includes a first electrode over the conductive structure. A resistance variable layer is disposed over the first electrode.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20140091273 - Resistive random access memory and fabrication method thereof: A resistive random access memory (RRAM) unit includes at least one bit line extending along a first direction, at least one word line disposed on a substrate and extending along a second direction so as to intersect the bit line, a hard mask layer on the word line to isolate... Agent: Powerchip Technology Corporation

20140091276 - Light emitting diode: A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer... Agent: Tsinghua University

20140091277 - Light emitting diode having vertical topology and method of making the same: An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting... Agent: Lg Electronics Inc.

20140091275 - Quantum dot light enhancement substrate: A component including a substrate, at least one layer including a color conversion material including quantum dots disposed over the substrate, and a layer including a conductive material (e.g., indium-tin-oxide) disposed over the at least one layer. (Embodiments of such component are also referred to herein as a QD light-enhancement... Agent:

20140091278 - Surface treatment of nanocrystal quantum dots after film deposition: Provided are methods of surface treatment of nanocrystal quantum dots after film deposition so as to exchange the native ligands of the quantum dots for exchange ligands that result in improvement in charge extraction from the nanocrystals.... Agent:

20140091279 - Non-planar semiconductor device having germanium-based active region with release etch-passivation surface: Non-planar semiconductor devices having germanium-based active regions with release etch-passivation surfaces are described. For example, a semiconductor device includes a vertical arrangement of a plurality of germanium-rich nanowires disposed above a substrate. Each nanowire includes a channel region having a sulfur-passivated outer surface. A gate stack is disposed on and... Agent:

20140091280 - Array substrate and manufacturing method thereof, display device: Embodiments of the present invention provide an array substrate, a manufacturing method thereof and a display device. The manufacturing method of an array substrate, comprising: forming a gate electrode on a base substrate by a first patterning process, and then depositing a gate insulating layer on the base substrate on... Agent: Boe Technology Group Co., Ltd.

20140091281 - Non-volatile memory device employing semiconductor nanoparticles: Semiconductor nanoparticles are deposited on a top surface of a first insulator layer of a substrate. A second insulator layer is deposited over the semiconductor nanoparticles and the first insulator layer. A semiconductor layer is then bonded to the second insulator layer to provide a semiconductor-on-insulator substrate, which includes a... Agent: International Business Machines Corporation

20140091296 - Adhesive film and method of encapsulating organic electronic device: Provided are an adhesive film, an encapsulated product of an organic electronic device using the same, and a method of encapsulating an organic electronic device. Particularly, the adhesive film encapsulating the organic electronic device to cover an entire surface of the organic electronic device includes an adhesive layer including a... Agent: Lg Chem, Ltd.

20140091291 - Array substrate and manufacturing method thereof, oled display device: An array substrate and a manufacturing method thereof, and an OLED display device are provided. The array substrate comprises: sub-pixel units defined by gate lines and data lines that cross with each other on a substrate, each of the sub-pixel units comprising a first TFT, a second TFT and a... Agent: Boe Technology Group Co., Ltd.

20140091290 - Encapsulated structure of light-emitting device, encapsulating process thereof and display device comprising encapsulated structure:

20140091300 - Hybrid ambipolar tfts: The present invention relates inter alia to an electronic device, preferably a thin film transistor (TFT) comprising layers with n-type and p-type semi conducting materials, wherein the p-type layer comprises at least one organic hole transport material. Furthermore, the present invention relates to the use of the electronic device according... Agent: Merck Patent Gmbh

20140091297 - Light emitting device: A triplet light emitting device which has high efficiency and improved stability and which can be fabricated by a simpler process is provided by simplifying the device structure and avoiding use of an unstable material. In a multilayer device structure using no hole blocking layer conventionally used in a triplet... Agent: Semiconductor Energy Laboratory Co., Ltd.

20140091293 - Light-emitting element, light-emitting device, display device, electronic device, and lighting device: Provided is a light-emitting element in which an adverse effect by halides in an EL layer is suppressed and which can be provided with low cost. The light-emitting element including at least two layers between an anode and a light-emitting layer. One of the two layers which is closer to... Agent: Semiconductor Energy Laboratory Co., Ltd.

20140091295 - Mixtures of organic emissive semiconductors and matrix materials, their use and electronic components comprising said materials: The present invention relates to new types of material mixtures composed of at least two substances, one serving as a matrix material and the other being an emission material capable of emission and containing at least one element of atomic number greater than 20, and for their use in organic... Agent: Merck Patent Gmbh

20140091298 - Novel compound and organic light-emitting device using same: The present invention provides a novel compound that is capable of largely improving a life span, efficiency, electrochemical stability and thermal stability of an organic light emitting device, and an organic light emitting device in which the compound is included in an organic compound layer.... Agent: Lg Chem, Ltd.

20140091292 - Oleds comprising light extraction substructures and display devices incorporating the same: An organic light emitting diode comprising a light extraction substructure and a diode superstructure is provided. The light extraction substructure comprises a light expulsion matrix distributed over discrete light extraction waveguide elements and a waveguide surface of the glass substrate. The light expulsion matrix is distributed at varying thicknesses to... Agent: Corning Incorporated

20140091287 - Organic el device, method for manufacturing the same, and electronic apparatus: An organic EL device has a pixel including a red, a green and a blue sub-pixel. The organic EL device includes anodes disposed in the sub-pixels, and a cathode. A red luminescent layer is formed by liquid application between the anode and the cathode, and a green luminescent layer is... Agent: Seiko Epson Corporation

20140091299 - Organic electroluminescence element, illumination device, and display device: The purpose of the present invention is to provide: an organic electroluminescence element having a plurality of light-emitting dopants of different light-emitting wavelengths and emitting white light, the white-light-emitting organic electroluminescence element having excellent longevity, low-voltage driving, and chromatic stability, and also having a few dark spots; as well as... Agent: Konica Minolta , Inc.

20140091284 - Organic light emitting diode: An organic light emitting diode includes a substrate, a first electrode, an organic functional layer; and a second electrode. One of the first electrode and the second electrode includes a treated patterned carbon nanotube film. The treated patterned carbon nanotube film includes at least two carbon nanotube linear units spaced... Agent: Beijing Funate Innovation Technology Co., Ltd.

20140091288 - Organic light emitting diode display and method of manufacturing the same: An organic light emitting diode (OLED) display includes a display panel including a flexible substrate and a thin film encapsulation (TFE) for covering and protecting an organic light emitting element formed on the flexible substrate, a first protective film arranged on the TFE to be opposite to the TFE, a... Agent:

20140091286 - Organic light emitting diode, touch display device and method for fabricating the same: The invention provides an OLED, a touch display device and method for fabricating the same. The OLED comprises: a substrate; a pixel electrode functioning as a first conducting electrode on the substrate; a first signal electrode and a second signal electrode disposed on the same layer as the pixel electrode;... Agent: Boe Technology Group Co., Ltd.

20140091289 - Organic light emitting display device: An organic light emitting display device includes first and second electrodes facing each other on a substrate, a first stack including a first hole transport layer, a second hole transport layer, a first emitting layer, and a first electron transport layer, the layers being sequentially stacked on the first electrode,... Agent: Lg Display Co., Ltd.

20140091285 - Organic light emitting display devices and methods of manufacturing organic light emitting display devices: An organic light emitting display device is disclosed. The organic light emitting display device includes a substrate, a first electrode, a pixel defining layer, a first hydrophobic pattern, at least one charge transport layer, a second hydrophobic pattern, an organic light emitting layer and a second electrode. The substrate has... Agent:

20140091294 - Organic light-emitting diode package structure: An organic light-emitting diode package structure includes an organic light-emitting diode device disposed on a substrate, and a filling layer covering the organic light-emitting diode device and including a fluorine-containing polyimide layer.... Agent: Wintek Corporation

20140091282 - Process for fabricating metal bus lines for oled lighting panels: Systems and methods for the design and fabrication of OLEDs, including high-performance large-area OLEDs, are provided. Variously described fabrication processes may be used to deposit and pattern bus lines with a smooth profile and a gradual sidewall transition. Such smooth profiles may, for example, reduce the probability of electrical shorting... Agent: Universal Display Corporation (027166)

20140091283 - Semiconducting compounds and optoelectronic devices incorporating same: Disclosed are new compounds having semiconducting properties. Such compounds can be processed in solution-phase into thin film semiconductors that exhibit high carrier mobility and/or good current modulation characteristics.... Agent: Polyera Corporation

20140091301 - Display device: A transistor including an oxide semiconductor layer can have stable electrical characteristics. In addition, a highly reliable display device including the transistor is provided. The display device includes a multi-layer film including an oxide layer and an oxide semiconductor layer; a gate insulating film in contact with the multi-layer film;... Agent: Semiconductor Energy Laboratory Co., Ltd.

20140091302 - P-type metal oxide semiconductor material thing: The disclosure provides a p-type metal oxide semiconductor material. The p-type metal oxide semiconductor material has the following formula: In1−xGa1−yMx+yZnO4+m, wherein M is Ca, Mg, or Cu, 0<x+y≦0.1, 0≦m≦3, and 0<x, 0≦y, or 0≦x, 0<y, and wherein a hole carrier concentration of the p-type metal oxide semiconductor material is in... Agent: Industrial Technology Research Institute

20140091303 - Semiconductor device and method for manufacturing semiconductor device: The semiconductor device includes a driver circuit including a first thin film transistor and a pixel including a second thin film transistor over one substrate. The first thin film transistor includes a first gate electrode layer, a gate insulating layer, a first oxide semiconductor layer, a first oxide conductive layer,... Agent: Semiconductor Energy Laboratory Co., Ltd.

20140091304 - Laser power and energy sensor utilizing anisotropic thermoelectric material: A laser-radiation sensor includes a copper substrate on which is grown an oriented polycrystalline buffer layer surmounted by an oriented polycrystalline sensor-element of an anisotropic transverse thermoelectric material. An absorber layer, thermally connected to the sensor-element, is heated by laser-radiation to be measured and communicates the heat to the sensor-element,... Agent:

20140091305 - Polysilicon thin film and manufacturing method thereof, array substrate and display device: A polysilicon thin film and a manufacturing method thereof, an array substrate and a display device are disclosed. The manufacturing method of the polysilicon thin film comprises the following steps: forming a graphene layer and an amorphous silicon layer which are adjacent; forming polysilicon by way of crystallizing amorphous silicon... Agent: Boe Technology Group Co., Ltd.

20140091306 - Wiring structure and display device: Provided is a technique that allows oxidation of Cu wires to be effectively prevented during plasma processing when forming a passivation film for a display device that utilizes an oxide semiconductor layer. This wiring structure comprises a semiconductor layer (oxide semiconductor) for a thin film transistor, a Cu alloy film... Agent: Kabushiki Kaisha Kobe Seiko Sho (kobe Steel, Ltd.)

20140091307 - Laser power and energy sensor utilizing anisotropic thermoelectric material: A laser-radiation sensor includes a copper substrate on which is grown an oriented polycrystalline buffer layer surmounted by an oriented polycrystalline sensor-element of an anisotropic transverse thermoelectric material. An absorber layer, thermally connected to the sensor -element, is heated by laser-radiation to be measured and communicates the heat to the... Agent:

20140091319 - Method of manufacturing a semiconductor device and semiconductor device: A method of manufacturing a semiconductor device includes laminating and forming an electron transit layer, an electron supplying layer, an etching stop layer, and a p-type film on a substrate sequentially, the p-type film being formed of a nitride semiconductor material that includes Al doped with an impurity element that... Agent: Fujitsu Limited

20140091317 - Method of manufacturing semiconductor crystal substrate, method of manufacturing semiconductor apparatus, semiconductor crystal substrate, and semiconductor apparatus: A method of manufacturing a semiconductor crystal substrate, includes forming a nitride layer by supplying a gas including a nitrogen component to a substrate formed of a material including silicon and nitriding a surface of the substrate; and forming an AlN layer on the nitride layer by supplying the gas... Agent:

20140091311 - Nitride semiconductor based power converting device: A nitride semiconductor based power converting device includes a nitride semiconductor based power transistor, and at least one nitride semiconductor based passive device. The passive device and the power transistor respectively include a channel layer including a first nitride semiconductor material, and a channel supply layer on the channel layer... Agent:

20140091312 - Power switching device and method of manufacturing the same: A power switching device includes a channel forming layer on a substrate which includes a 2-dimensional electron gas (2DEG), and a channel supply layer which corresponds to the 2DEG at the channel forming layer. A cathode is coupled to a first end of the channel supply layer and an anode... Agent:

20140091309 - Predisposed high electron mobility transistor: A predisposed high electron mobility transistor (HEMT) is disclosed. The predisposed HEMT includes a buffer layer, a HEMT channel layer on the buffer layer, a first HEMT barrier layer over the HEMT channel layer, and a HEMT cap layer on the first HEMT barrier layer. The HEMT cap layer has... Agent: Cree, Inc.

20140091308 - Self-aligned structures and methods for asymmetric gan transistors & enhancement mode operation: Embodiments include high electron mobility transistors (HEMT). In embodiments, a gate electrode is spaced apart by different distances from a source and drain semiconductor region to provide high breakdown voltage and low on-state resistance. In embodiments, self-alignment techniques are applied to form a dielectric liner in trenches and over an... Agent:

20140091313 - Semiconductor apparatus: A semiconductor apparatus includes a substrate; a buffer layer formed on the substrate; a first semiconductor layer formed on the buffer layer; and a second semiconductor layer formed on the first semiconductor layer. Further, the buffer layer is formed of AlGaN and doped with Fe, the buffer layer includes a... Agent:

20140091314 - Semiconductor apparatus: A semiconductor apparatus includes a buffer layer formed on a substrate; an SLS (Strained Layer Supperlattice) buffer layer formed on the buffer layer; an electron transit layer formed on the SLS buffer layer and formed of a semiconductor material; and an electron supply layer formed on the electron transit layer... Agent:

20140091318 - Semiconductor apparatus: A semiconductor apparatus includes: a substrate; a buffer layer formed on the substrate; a strained layer superlattice buffer layer formed on the buffer layer; an electron transit layer formed of a semiconductor material on the strained layer superlattice buffer layer; and an electron supply layer formed of a semiconductor material... Agent: Fujitsu Limited

20140091315 - Semiconductor device and manufacturing method of semiconductor device: A semiconductor device includes an electron transit layer formed on a substrate; an electron supply layer formed on the electron transit layer; a doping layer formed on the electron supply layer, the doping layer being formed with a nitride semiconductor in which an impurity element to become p-type and C... Agent:

20140091316 - Semiconductor device and manufacturing method of semiconductor device: A semiconductor device includes a first semiconductor layer formed on a substrate; a second semiconductor layer and a third semiconductor layer formed on the first semiconductor layer; a fourth semiconductor layer formed on the third semiconductor layer; a gate electrode formed on the fourth semiconductor layer; and a source electrode... Agent:

20140091320 - Semiconductor device and method for manufacturing a semiconductor device: A semiconductor device includes a first semiconductor layer formed on a substrate, a second semiconductor layer formed on the first semiconductor layer, a third semiconductor layer and a fourth semiconductor layer formed on the second semiconductor layer, a gate electrode formed on the third semiconductor layer, and a source electrode... Agent: Fujitsu Limited

20140091322 - Semiconductor device and method of manufacturing the same: To enhance the reliability of the semiconductor device using a nitride semiconductor. A channel layer is formed over a substrate, a barrier layer is formed over the channel layer, a cap layer is formed over the barrier layer, and a gate electrode is formed over the cap layer. In addition,... Agent: Renesas Electronics Corporation

20140091310 - Semiconductor device using 2-dimensional electron gas and 2-dimensional hole gas and method of manufacturing the semiconductor device: A semiconductor device includes a first compound semiconductor layer on a substrate, first through third electrodes spaced apart from each other on the first compound semiconductor layer, a second compound semiconductor layer on the first compound semiconductor layer between the first through third electrodes, a third compound semiconductor layer on... Agent: Samsung Electronics Co., Ltd.

20140091321 - Semiconductor device, solid-state imaging device, and method of manufacturing semiconductor device: There is provided a semiconductor device including a semiconductor layer that includes an active region, semiconductor elements that are formed using the active region, connection regions that are obtained by metalizing parts of the semiconductor layer in an island shape isolated from the active region, an insulation film that is... Agent: Sony Corporation

20140091323 - Semiconductor epitaxial structure: A semiconductor epitaxial structure is provided. The semiconductor epitaxial structure includes a substrate, a doped semiconductor epitaxial layer, and a carbon nanotube layer. The doped semiconductor epitaxial layer is located on the substrate. The carbon nanotube layer is located between the substrate and the doped semiconductor epitaxial layer. The carbon... Agent: Tsinghua University

20140091325 - Sic single crystal, production method therefor, sic wafer and semiconductor device: When an SiC single crystal having a large diameter of a {0001} plane is produced by repeating a-plane growth, the a-plane growth of the SiC single crystal is carried out so that a ratio Sfacet (=S1×100/S2) of an area (S1) of a Si-plane side facet region to a total area... Agent: Denso Corporation

20140091324 - Switching circuit and semiconductor module: A switching circuit includes: a first switching element (Q1); a resistor (11) inserted between a control electrode (G) of the first switching element (Q1) and a control circuit (13) switching the first switching element (Q1); and a first capacitor (15) and a second switching element (14) connected in series between... Agent: Sanken Electric Co., Ltd.

20140091326 - Light blocking structure in leadframe: A semiconductor proximity sensor (100) has a flat leadframe (110) with a first (110a) and a second (110b) surface, the second surface being solderable; the leadframe includes a first (111) and a second (112) pad, a plurality of leads (113, 114), and fingers (115, 118) framing the first pad, the... Agent:

20140091327 - Display: A display is provided. The display includes a light emitting element, a filter layer and a photosensor. The filter layer is disposed on a side of the light emitting element. The filter layer includes a black filter. The photosensor is disposed corresponding with the black filter. The photosensor is used... Agent: Industrial Technology Research Institute

20140091328 - Imaging apparatus and medical equipment: A light receiving section is provided with a plurality of light receiving elements. A light source section is arranged in a subject side of the light receiving section, and is provided with a light emitting section that illuminates the subject and a plurality of transmissive sections that transmits incident light... Agent: Seiko Epson Corporation

20140091331 - Display device, thin film transistor, array substrate and manufacturing method thereof: The embodiments of the invention provide a display device, a thin film transistor, an array substrate and a manufacturing method thereof. The manufacturing method comprises: step A, forming patterns of a source electrode, a drain electrode, a data line and a pixel electrode; step B, forming an active layer and... Agent: Boe Technology Group Co., Ltd.

20140091336 - Electronic devices with component mounting structures: Electronic devices are provided that have components. A housing protrusion may be interposed between a display cover layer and display components. A button may have a button member. A support structure for a dome switch in the button may have a screw hole. A housing may have screw holes through... Agent: Apple Inc.

20140091334 - Encapsulating sheet-covered semiconductor element, producing method thereof, semiconductor device, and producing method thereof: A method for producing an encapsulating sheet-covered semiconductor element includes a semiconductor element disposing step of disposing a plurality of semiconductor elements at spaced intervals to each other and an encapsulating sheet disposing step of disposing an encapsulating sheet so as to cover a plurality of the semiconductor elements and... Agent: Nitto Denko Corporation

20140091329 - Led emitter with improved white color appearance: The present disclosure involves a lighting instrument. The lighting instrument includes a board or substrate, for example, a printed circuit board substrate. The lighting instrument includes a plurality of light-emitting diode (LED) dies disposed on the substrate. The LED dies are spaced apart from one another. Each LED die is... Agent: Tsmc Solid State Lighting Ltd.

20140091332 - Led lighting devices incorporating waveguides: A LED lighting device includes at least one waveguide element and multiple light-emitting sources such as LEDs or LED packages, which may be optically coupled though different light entry regions to the at least one waveguide. Multiple light solid state sources may be arranged in strips. A waveguide system includes... Agent: Cree, Inc.

20140091330 - Led package structure with transparent electrodes: The present invention discloses a LED package structure with transparent electrodes. The electrode layers the semiconductor layers inside the LED chip and the protection layer are all transparent to visible and invisible lights. With the adoption of the present invention, electrodes on the LED package no longer block any... Agent: Helio Optoelectronics Corporation

20140091335 - Light emitting device: The light emitting device of the present invention includes: a bendable tube extending in a first direction; a flexible board extending in the first direction and housed in the tube; and a plurality of light emitting elements mounted on the flexible board, wherein the flexible board comprises a plurality of... Agent: Nichia Corporation

20140091333 - Light emitting device equipped with protective member: A light emitting device includes a light emitting device body and a protective member. The light emitting device body has a flexible base member, at least one light emitting element arranged on the base member, and a sealing resin member sealing the light emitting element. The protective member is disposed... Agent: Nichia Corporation

20140091338 - Light emitting diode: Exemplary embodiments of the present invention relate to light emitting diodes including a plurality of light emitting cells on a substrate to be suitable for AC driving. The light emitting diode includes a substrate and a plurality of light emitting cell formed on the substrate. Each light emitting cell includes... Agent: Seoul Opto Device Co., Ltd.

20140091337 - Light-emitting device, light-emitting device assembly, and electrode-bearing substrate: A light-emitting device assembly includes a substrate, an optical semiconductor element mounted on the surface of the substrate, an encapsulating layer formed on the substrate surface to encapsulate the optical semiconductor element, and an electrode formed on the substrate surface to be electrically connected to the optical semiconductor element. On... Agent: Nitto Denko Corporation

20140091339 - Semiconductor device, display, and electronic apparatus: A semiconductor device having a substrate is disclosed. The substrate includes a first set of inner edges and a second set of inner edges cooperating with the first set of inner edges. The second set of inner edges is positioned outside the first set of inner edges with respect to... Agent:

20140091343 - Color filter substrate manufacturing method, display device manufacturing method, color filter substrate, and display device: The present invention provides a color filter substrate manufacturing method which can prevent the occurrence of color mixing between adjacent pixels despite of the use of an inkjet method, and which are unlikely to cause flicker when used for displays such as televisions. The prevent invention is a color filter... Agent: Sharp Kabushiki Kaisha

20140091341 - Device and method for an led with a convex cover: An approach is provided for a device and a method for an LED with a convex cover, which comprises multiple LED diodes compartmentalized to at least one group. Each group of LED diodes forms an electrical loop on a PCB, and has at least one first LED diode on a... Agent: Jiangsu Sun & Moon Lighting Co.,ltd.

20140091342 - Lighting device: A lighting device using an electroluminescent material, in which color mixing and dimming can be performed by a simple method, is provided. A lighting device including a first light-emitting element and a second light-emitting element which emits light having a wavelength longer than that of light emitted from the first... Agent: Semiconductor Energy Laboratory Co., Ltd.

20140091340 - Plastic leaded chip carrier with diagonally oriented light sources for fine-pitched display: A Plastic Leaded Chip Carrier (PLCC) package is disclosed. The PLCC package is configured to support a plurality of light sources. The light sources may be mounted on a mounting section of the PLCC package's lead frame and the mounting section of the lead frame may extend diagonally with respect... Agent: Avago Technologies GeneralIP(singapore) Pte. Ltd

20140091348 - Encapsulating sheet-covered semiconductor element, producing method thereof, semiconductor device, and producing method thereof: An encapsulating sheet-covered semiconductor element includes a semiconductor element having one surface in contact with a board and the other surface disposed at the other side of the one surface and an encapsulating sheet covering at least the other surface of the semiconductor element. The encapsulating sheet includes an exposed... Agent: Nitto Denko Corporation

20140091344 - Illumination component package: An illumination component package includes a substrate, at least one illumination component, a dam and an encapsulating glue. The illumination component is mounted on the substrate. The dam surrounds the illumination component to form a accommodating space. The inner wall of the dam includes a plurality of glue adhering microstructures.... Agent: Lextar Electronics Corporation

20140091345 - Luminescence device: A luminescence device used in a backlight unit for lighting or displaying may include a substrate having a first electrode and a second electrode, and an LED chip disposed on the first electrode. A dam is disposed on the substrate. The dam is disposed spaced from the LED chip, and... Agent:

20140091349 - Optical designs for high-efficacy white-light emitting diodes: A method for increasing the luminous efficacy of a white light emitting diode (WLED), comprising introducing optically functional interfaces between an LED die and a phosphor, and between the phosphor and an outer medium, wherein at least one of the interfaces between the phosphor and the LED die provides a... Agent: The Regents Of The University Of California

20140091346 - Phosphor adhesive sheet, optical semiconductor element-phosphor layer pressure-sensitive adhesive body, and optical semiconductor device: A phosphor adhesive sheet includes a phosphor layer containing a phosphor and an adhesive layer laminated on one surface in a thickness direction of the phosphor layer. The adhesive layer is formed from a silicone pressure-sensitive adhesive composition. A percentage of the peel strength of the phosphor adhesive sheet is... Agent: Nitto Denko Corporation

20140091347 - Phosphor layer attaching kit, optical semiconductor element-phosphor layer attaching body, and optical semiconductor device: A phosphor layer attaching kit includes a phosphor layer and a silicone pressure-sensitive adhesion composition for attaching the phosphor layer to an optical semiconductor element or an optical semiconductor element package. A percentage of the peel strength of the silicone pressure-sensitive adhesion composition is 30% or more.... Agent: Nitto Denko Corporation

20140091350 - Semiconductor light emitting device and method for manufacturing same: A semiconductor light emitting device, includes: a stacked structural unit including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided therebetween; and an electrode including a first and second metal layers, the first metal layer... Agent: Kabushiki Kaisha Toshiba

20140091356 - Light emitting device: A light emitting device includes a package constituted by a molded article having a light emitting face, a bottom face, and a rear face, and a pair of leads partially embedded in the molded article, protrude from the bottom face, and have ends that bend toward either the light emitting... Agent: Nichia Corporation

20140091352 - Light emitting diode: A light emitting diode includes a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode, a second electrode. The second electrode includes a treated patterned carbon nanotube film. The treated patterned carbon nanotube film includes at least two carbon nanotube linear units spaced from each other;... Agent: Beijing Funate Innovation Technology Co., Ltd.

20140091351 - Light emitting diode chip: A Light emitting diode (LED) chip includes a substrate, an N-type semiconductor layer, a luminous layer, a P-type semiconductor layer, an N-type electrode layer and a P-type electrode layer. The N-type semiconductor layer is mounted on the substrate. The luminous layer is mounted on the N-type semiconductor layer. The P-type... Agent: Lextar Electronics Corporation

20140091354 - Light emitting diode having two separated substrate parts connected together by encapsulation: A light emitting diode includes a substrate consisting two separated parts with a gap therebetween. A first electrical connecting portion is fixed to one of the two separated parts of the substrate and adjacent to the gap. A second electrical connecting portion is fixed to the other one of the... Agent: Advanced Optoelectronic Technology, Inc.

20140091355 - Method for forming current diffusion layer in light emitting diode device and method for fabricating the same: A method of forming a current diffusion layer is provided that comprises providing an epitaxial wafer. The method further comprises depositing ITO source material on the epitaxial wafer to form a base ITO layer by a direct current electron gun and depositing ZnO source material, during simultaneous deposition of the... Agent: Byd Company Limited

20140091353 - Vertical structure leds: A vertical structure light-emitting device includes a conductive support, a light-emitting semiconductor structure disposed on the conductive support structure, the semiconductor structure having a first semiconductor surface, a side semiconductor surface and a second semiconductor surface, a first electrode electrically connected to the first-type semiconductor layer, a second electrode electrically... Agent: Lg Innotek Co., Ltd.

20140091357 - Encapsulated structure of light-emitting device, encapsulating process thereof and display device comprising encapsulated structure: v

20140091358 - Mct device with base-width-determined latching and non-latching states: Methods and systems for a gate-controlled thyristor which switches between narrow-base operation in the ON state and wide-base operation in the OFF state, and which can only sustain latch-up in the narrow-base ON state.... Agent: Pakal Technologies LLC

20140091359 - Semiconductor device: A semiconductor device includes a semiconductor substrate having one main surface in which an anode of a diode is formed. At a distance from the outer periphery of the anode, a guard ring is formed to surround the anode. The anode includes a p+-type diffusion region, a p−-type region, and... Agent: Mitsubishi Electric Corporation

20140091362 - Integrated circuit transistor structure with high germanium concentration sige stressor: An integrated circuit transistor structure includes a semiconductor substrate, a first SiGe layer in at least one of a source area or a drain area on the semiconductor substrate, and a channel between the source area and the drain area. The first SiGe layer has a Ge concentration of 50... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20140091361 - Methods of containing defects for non-silicon device engineering: An apparatus including a device including a channel material having a first lattice structure on a well of a well material having a matched lattice structure in a buffer material having a second lattice structure that is different than the first lattice structure. A method including forming a trench in... Agent:

20140091360 - Trench confined epitaxially grown device layer(s): Trench-confined selective epitaxial growth process in which epitaxial growth of a semiconductor device layer proceeds within the confines of a trench. In embodiments, a trench is fabricated to include a pristine, planar semiconductor seeding surface disposed at the bottom of the trench. Semiconductor regions around the seeding surface may be... Agent:

20140091364 - Compound semiconductor device and method of manufacturing the same: An AlGaN/GaN HEMT includes: an electron transit layer; an electron supply layer formed above the electron transit layer; and a gate electrode formed above the electron supply layer, wherein a p-type semiconductor region is formed only at a site of the electron transit layer which is contained in a region... Agent: Fujitsu Limited

20140091365 - Compound semiconductor device and method of manufacturing the same: A compound semiconductor device includes: a compound semiconductor layer; and a gate electrode formed above the compound semiconductor layer; and a source electrode and a drain electrode formed on both sides of the gate electrode, on the compound semiconductor layer, wherein the source electrode has a plurality of bottom surfaces... Agent: Fujitsu Limited

20140091363 - Normally-off high electron mobility transistor: According to example embodiments, a normally-off high electron mobility transistor (HEMT) includes: a channel layer having a first nitride semiconductor, a channel supply layer on the channel layer, a source electrode and a drain electrode at sides of the channel supply layer, a depletion-forming layer on the channel supply layer,... Agent: Samsung Electronics Co., Ltd.

20140091366 - Semiconductor devices and methods of manufacturing the same: Example embodiments relate to semiconductor devices and/or methods of manufacturing the same. According to example embodiments, a semiconductor device may include a first heterojunction field effect transistor (HFET) on a first surface of a substrate, and a second HFET. A second surface of the substrate may be on the second... Agent:

20140091367 - Integrated circuits, standard cells, and methods for generating a layout of an integrated circuit: An integrated circuit according to an embodiment of the invention includes a substrate having a first cell and a second cell, the first and the second cells being adapted to perform a substantially same functionality. Corresponding functional structures of the first and the second cell are electrically connected, at different... Agent:

20140091368 - Solid-state imaging device: A solid-state imaging device including: a semiconductor substrate of a first conductivity type, having a fixed electric potential; a dark-current drain region of a second conductivity type, formed on a portion of the semiconductor substrate; a connection region of the first conductivity type, formed on another portion of the semiconductor... Agent: Panasonic Corporation

20140091369 - High voltage metal-oxide-semiconductor transistor device: A HV MOS transistor device is provided. The HV MOS transistor device includes a substrate comprising at least an insulating region formed thereon, a gate positioned on the substrate and covering a portion of the insulating region, a drain region and a source region formed at respective sides of the... Agent: United Microelectronics Corp.

20140091372 - Method for producing semiconductor device and semiconductor device: In a first step, a planar silicon layer is formed on a silicon substrate and first and second pillar-shaped silicon layers are formed on the planar silicon layer; a second step includes forming an oxide film hard mask on the first and second pillar-shaped silicon layers, and forming a second... Agent: Unisantis Electronics Singapore Pte. Ltd.

20140091371 - Semiconductor device: A semiconductor device including: a substrate having a channel region and first and second recesses disposed on opposite sides of the channel region; a gate insulating layer disposed on the channel region; a gate structure disposed on the gate insulating layer; and a source region disposed in the first recess... Agent:

20140091373 - Semiconductor device with breakdown preventing layer: A semiconductor device with a breakdown preventing layer is provided. The breakdown preventing layer can be located in a high-voltage surface region of the device. The breakdown preventing layer can include an insulating film with conducting elements embedded therein. The conducting elements can be arranged along a lateral length of... Agent: Sensor Electronic Technology, Inc.

20140091370 - Transistor formation using cold welding: A device and method for fabrication includes providing a first substrate assembly including a first substrate and a first metal layer formed on the first substrate and a second substrate assembly including a second substrate and a second metal layer formed on the second substrate. The first metal layer is... Agent: International Business Machines Corporation

20140091375 - Implant isolated devices and method for forming the same: A device includes a semiconductor substrate and implant isolation region extending from a top surface of the semiconductor substrate into the semiconductor substrate surrounding an active region. A gate dielectric is disposed over an active region of the semiconductor substrate and extends over the implant isolation region. A gate electrode... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20140091374 - Stress engineered multi-layers for integration of cmos and si nanophotonics: A method of forming an integrated photonic semiconductor structure having a photonic device and a CMOS device may include depositing a first silicon nitride layer having a first stress property over the photonic device, depositing an oxide layer having a stress property over the deposited first silicon nitride layer, and... Agent: International Business Machines Corporation

20140091376 - Monolithically integrated antenna and receiver circuit: The invention relates to a device for detecting electromagnetic radiation in the THz frequency range, comprising at least one transistor (FET1, FET2), which has a first electrode, a second electrode, a control electrode, and a channel between the first electrode and the second electrode, and comprising an antenna structure. An... Agent: Johann Wolfgang Goethe-universitat Frankfurt A.m.

20140091377 - Implant isolated devices and method for forming the same: A device includes a semiconductor substrate and implant isolation region extending from a top surface of the semiconductor substrate into the semiconductor substrate surrounding an active region. A gate dielectric is disposed over an active region of the semiconductor substrate, wherein the gate dielectric extends over the implant isolation region.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20140091379 - Fluorocarbon coating having low refractive index: A fluorocarbon coating comprises an amorphous structure with CF2 bonds present in an atomic percentage of at least about 15%, and having a refractive index of less than about 1.4. The fluorocarbon coating can be deposited on a substrate by placing the substrate in a process zone comprising a pair... Agent: Applied Materials, Inc.

20140091378 - Solid-state imaging device and image capturing system: A solid-state imaging device includes a photoelectric converting portion including a first semiconductor region capable of accumulating a signal charge, a second semiconductor region of the same conductivity type as the first semiconductor region, a gate electrode provided between the first and second semiconductor regions, and an insulating layer provided... Agent: Canon Kabushiki Kaisha

20140091380 - Split gate flash cell: In one aspect, a disclosed method of fabricating a split gate memory device includes forming a gate dielectric layer overlying an channel region of a semiconductor substrate and forming an electrically conductive select gate overlying the gate dielectric layer. The method further includes forming a counter doping region in an... Agent: Freescale Semiconductor, Inc.

20140091381 - Support lines to prevent line collapse in arrays: Methods for preventing line collapse during the fabrication of NAND flash memory and other microelectronic devices that utilize closely spaced device structures with high aspect ratios are described. In some embodiments, one or more mechanical support structures may be provided to prevent the collapse of closely spaced device structures during... Agent: Sandisk 3d, LLC

20140091382 - Split-gate memory cell with substrate stressor region, and method of making same: A memory device, and method of make same, having a substrate of semiconductor material of a first conductivity type, first and second spaced-apart regions in the substrate of a second conductivity type, with a channel region in the substrate therebetween, a conductive floating gate over and insulated from the substrate,... Agent: Silicon Storage Technology, Inc.

20140091383 - Semiconductor device: A method for fabricating a semiconductor device is described. A stacked gate dielectric is formed over a substrate, including a first dielectric layer, a second dielectric layer and a third dielectric layer from bottom to top. A conductive layer is formed on the stacked gate dielectric and then patterned to... Agent: United Microelectronics Corp.

20140091384 - Reverse polarity protection for n-substrate high-side switches: A semiconductor device is disclosed. In accordance with a first aspect of the present invention the device includes a semiconductor chip having a substrate, a first supply terminal electrically coupled to the substrate to provide a first supply potential (VS) and a load current to the substrate, and a second... Agent: Infineon Technologies Ag

20140091385 - Semiconductor device: A semiconductor device includes a first pillar-shaped silicon layer formed on a planar silicon layer, a gate insulating film formed around the first pillar-shaped silicon layer, a first gate electrode formed around the gate insulating film, a gate line connected to the first gate electrode, a first first-conductivity-type diffusion layer... Agent: Unisantis Electronics Singapore Pte. Ltd.

20140091386 - Mosfet device and fabrication: A semiconductor device includes a substrate, an active gate trench in the substrate; a source polysilicon pickup trench in the substrate; a polysilicon electrode disposed in the source polysilicon pickup trench; and a body region in the substrate. The top surface of the polysilicon electrode is below the bottom of... Agent: Alpha And Omega Semiconductor Incorporated

20140091387 - Semiconductor device: In a transistor including a trench gate, a gate contact hole for connecting a gate electrode and a gate wiring to each other is provided on a trench. In a transistor in which the trench gate is formed in a grid pattern and a plurality of source regions are surrounded... Agent: Seiko Instruments Inc.

20140091388 - Semiconductor device and method of fabricating the same: Provided are a semiconductor device and a method of fabricating the same. The method includes: forming a trench in a semiconductor substrate of a first conductive type; forming a trench dopant containing layer including a dopant of a second conductive type on a sidewall and a bottom surface of the... Agent: Electronics And Telecommunications Research Institute

20140091389 - High voltage metal-oxide-semiconductor transistor device: A high voltage metal-oxide-semiconductor transistor device includes a substrate having an insulating region formed therein, a gate covering a portion of the insulating region and formed on the substrate, a source region and a drain region formed at respective sides of the gate in the substrate, a body region formed... Agent: United Microelectronics Corp.

20140091391 - Field-effect-transistor with self-aligned diffusion contact: Embodiments of the present invention provide an array of fin-type transistors formed on top of an oxide layer. At least a first and a second of the fin-type transistors have their respective source and drain contacts being formed inside the oxide layer, with one of the contacts of the first... Agent: International Business Machines Corporation

20140091390 - Protection layer for halftone process of third metal: A thin-film transistor having a protection layer for a planarization layer. The protection layer prevents reduction of the planarization layer during an ashing process, thereby preventing the formation of a steeply tapered via hole through the planarization layer. In this manner, the via hole may be coated with a conductive... Agent: Apple Inc.

20140091392 - Semiconductor device, semiconductor wafer, method for producing semiconductor wafer, and method for producing semiconductor device: There is provided a semiconductor device including a first channel-type first MISFET formed and a second channel-type second MISFET: a first source and a first drain of the first MISFET and a second source and a second drain of the second MISFET are made of the same conductive substance, and... Agent: The University Of Tokyo

20140091393 - Semiconductor device, semiconductor wafer, method for producing semiconductor wafer, and method for producing semiconductor device: There is provided a semiconductor device including: a first source and a first drain of a first-channel-type MISFET formed on a first semiconductor crystal layer, which are made of a compound having an atom constituting the first semiconductor crystal layer and a nickel atom, a compound having an atom constituting... Agent: The Universtiy Of Tokyo

20140091394 - Multi-gate field effect transistor (fet) including isolated fin body: Aspects of the disclosure provide a multi-gate field effect transistor (FET) formed on a bulk substrate that includes an isolated fin and methods of forming the same. In one embodiment, the multi-gate FET includes: a plurality of silicon fin structures formed on the bulk substrate, each silicon fin structure including... Agent: International Business Machines Corporation

20140091396 - Pass gate, semiconductor memory, and semiconductor device: According to one embodiment, a pass gate provided between a data holding unit of an SRAM cell and a bit line, includes a first tunnel transistor and a first diode connected in series between the data holding unit and the bit line, and a second tunnel transistor and a second... Agent: Kabushiki Kaisha Toshiba

20140091395 - Transistor: A method for fabricating a transistor device including the following processes. First, a semiconductor substrate having a first transistor region is provided. A low temperature deposition process is carried out to form a first tensile stress layer on a transistor within the first transistor region, wherein a temperature of the... Agent: United Microelectronics Corp.

20140091398 - Semiconductor device, semiconductor wafer, method for producing semiconductor wafer, and method for producing semiconductor device: Provided is a semiconductor device including a first source and a first drain of a P-channel-type MISFET formed on a Ge wafer, which are made of a compound having a Ge atom and a nickel atom, a compound having a Ge atom and a cobalt atom, or a compound having... Agent: The University Of Tokyo

20140091397 - Semiconductor integrated circuit device and method of manufacturing thereof: It is therefore an object of the present invention to provide a method in which, in a semiconductor integrated circuit device, a plurality of transistors having wide-rangingly different Ioff levels are embedded together in a semiconductor device including transistors each using a non-doped channel. By controlling an effective channel length,... Agent: Fujitsu Semiconductor Limited

20140091399 - Electronic device including a transistor and a verticle conductive structure: An electronic device, including an integrated circuit, can include a buried conductive region and a semiconductor layer overlying the buried conductive region, wherein the semiconductor layer has a primary surface and an opposing surface lying closer to the buried conductive region. The electronic device can also include a first doped... Agent: Semiconductor Components Industries, LLC

20140091400 - Gate dielectric of semiconductor device: A method of fabricating a semiconductor device having a different gate structure in each of a plurality of device regions is described. The method may include a replacement gate process. The method includes forming a hard mask layer on oxide layers formed on one or more regions of the substrate.... Agent:

20140091401 - Power semiconductor housing with redundant functionality: In various embodiments, a power semiconductor housing having an integrated circuit is provided. The integrated circuit may include: a first gate pad and a second gate pad; and a first gate contact and a second gate contact; wherein the first gate pad is electrically connected to the first gate contact;... Agent: Infineon Technologies Ag

20140091402 - Integrated circuit metal gate structure: A semiconductor device includes a gate dielectric layer and a gate electrode formed on the gate dielectric layer. The gate electrode includes a first metal layer, a second metal layer, and a third metal layer. The first metal layer includes an oxygen-gettering composition. The second metal layer includes oxygen. The... Agent:

20140091403 - Method for producing semiconductor device and semiconductor device: A method for producing a semiconductor device includes a step of forming a first insulating film around a fin-shaped silicon layer and forming a pillar-shaped silicon layer in an upper portion of the fin-shaped silicon layer; a step of implanting an impurity into upper portions of the pillar-shaped silicon layer... Agent: Unisantis Electronics Singapore Pte. Ltd.

20140091404 - Acceleration sensor: A first sensor section installed in an acceleration sensor employs a first elastic member which is elastically movable according to acceleration in the first and third directions and is stiff against acceleration in second direction so as to restrict elasticity in second direction. Thereby, the first sensor section is provided... Agent: Yamaha Corporation

20140091405 - Hybrid integrated pressure sensor component: A pressure sensor component includes a MEMS component having at least one pattern element that is able to be deflected perpendicular to the component plane, which is equipped with at least one electrode of a measuring capacitor device, and an ASIC component having integrated circuit elements and at least one... Agent: Robert Bosch Gmbh

20140091407 - Integrated semiconductor devices with amorphous silicon beam, methods of manufacture and design structure: Bulk acoustic wave filters and/or bulk acoustic resonators integrated with CMOS processes, methods of manufacture and design structures are disclosed. The method includes forming at least one beam comprising amorphous silicon material and providing an insulator material over and adjacent to the amorphous silicon beam. The method further includes forming... Agent: International Business Machines Corporation

20140091406 - Mems microphone system for harsh environments: A MEMS microphone system suited for harsh environments. The system uses an integrated circuit package. A first, solid metal lid covers one face of a ceramic package base that includes a cavity, forming an acoustic chamber. The base includes an aperture through the opposing face of the base for receiving... Agent: Invensense, Inc.

20140091408 - Sensor module and semiconductor chip: A sensor module and semiconductor chip. One embodiment provides a carrier. A semiconductor chip includes a first recess and a second recess and a main surface of the semiconductor chip. The semiconductor chip is mounted to the carrier such that the first recess forms a first cavity with the carrier... Agent: Infineon Technologies Ag

20140091409 - Applications of contact-transfer printed membranes: The disclosed embodiments provide sensitive pixel arrays formed using solvent-assisted or unassisted release processes. Exemplary devices include detectors arrays, tunable optical instruments, deflectable mirrors, digital micro-mirrors, digital light processing chips, tunable optical micro-cavity resonators, acoustic sensors, acoustic actuators, acoustic transducer devices and capacitive zipper actuators to name a few.... Agent: Massachusetts Institute Of Technology

20140091410 - Method and apparatus for fabricating piezoresistive polysilicon by low-temperature metal induced crystallization: The present invention provides a method and apparatus for fabricating piezoresistive polysilicon on a substrate by low-temperature metal induced crystallization by: (1) providing the substrate having a passivation layer; (2) performing, at or near room temperature in a chamber without breaking a vacuum or near-vacuum within the chamber, the steps... Agent: Board Of Regents, The University Of Texas System

20140091412 - Magnetic sidewalls for write lines in field-induced mram and methods of manufacturing them: In one embodiment, there is provided a non-volatile magnetic memory cell. The non-volatile magnetic memory cell comprises a switchable magnetic element; and a word line and a bit line to energize the switchable magnetic element; wherein at least one of the word line and the bit line comprises a magnetic... Agent: Magsil Corporation

20140091411 - Repeated spin current interconnects: One embodiment includes a metal layer including first and second metal portions; a ferromagnetic layer including a first ferromagnetic portion that directly contacts the first metal portion and a second ferromagnetic portion that directly contacts the second metal portion; and a first metal non-magnetic interconnect coupling the first ferromagnetic portion... Agent:

20140091413 - Detector diode: The present invention generally relates to a radiation sensor for use particularly in, but by no means exclusively, in measuring radiation dose in photon or electron fields such as for radiation medicine, including radiotherapy and radiation based diagnosis. According to the present invention, there is provided a semiconductor radiation detector... Agent: Scandidos Ab

20140091414 - Semiconductor apparatus: A semiconductor apparatus includes a conductive member penetrating through a first semiconductor layer, a first insulator layer, and a third insulator layer, and connecting a first conductor layer with a second conductor layer. The conductive member has a first region containing copper, and a second region containing a material different... Agent: Canon Kabushiki Kaisha

20140091418 - Color filter, ccd sensor, cmos sensor, organic cmos sensor, and solid-state image sensor: A color filter includes: a red pixel in which a transmittance of a light having a wavelength of 400 nm is 15% or less, and a transmittance of a light having a wavelength of 650 nm is 90% or more; a green pixel in which a transmittance of a light... Agent: Fujifilm Corporation

20140091417 - Low refractive index coating deposited by remote plasma cvd: A method of depositing a low refractive index coating on a photo-active feature on a substrate comprises forming a substrate having one or more photo-active features thereon and placing the substrate in a process zone. A deposition gas is energized in a remote gas energizer, the deposition gas comprising a... Agent: Applied Materials, Inc.

20140091419 - Optical filter, solid-state imaging element, imaging device lens and imaging device: The present invention relates to an optical filter, a solid-state imaging element and an imaging device lens which contain a near infrared ray absorbing layer having a specific near infrared ray absorbing dye dispersed in a transparent resin having a refractive index of 1.54 or more, and also relates to... Agent: Asahi Glass Company, Limited

20140091416 - Photoelectric conversion apparatus and manufacturing method for a photoelectric conversion apparatus: A photoelectric conversion apparatus has multiple photoelectric converting units disposed in a semiconductor substrate, and isolation portions disposed in the semiconductor substrate. Each photoelectric converting unit includes a second semiconductor region, a third semiconductor region, disposed below the second semiconductor region and a fourth semiconductor region disposed below the third... Agent: Canon Kabushiki Kaisha

20140091415 - Solid-state imaging apparatus, manufacturing method for the same, and electronic apparatus: A solid-state imaging apparatus includes a semiconductor substrate, an upper layer film, and on-chip lenses. On the semiconductor substrate, a plurality of pixels are formed. The upper layer film is laminated on the semiconductor substrate. The on-chip lenses are formed on the upper layer film so as to correspond to... Agent: Sony Corporation

20140091420 - Method of monolithically integrated optoelectrics: A monolithically integrated sensor is disclosed in the form of light detector(s), visible light emitter(s) and associated control circuit(s) monolithically integrated on a single silicon microchip. The detector structures consist of p-i-n photodiode structures, both diffused into and deposited on the surface of the silicon substrate. The emitter structures consist... Agent:

20140091421 - Solid-state image pickup element and solid-state image pickup element mounting structure: A solid-state image pickup element is provided with a semiconductor substrate having a photosensitive region, a plurality of first electrode pads arrayed on a principal face of the semiconductor substrate, a plurality of second electrode pads arrayed in a direction along a direction in which the plurality of first electrode... Agent: Hamamatsu Photonics K.k.

20140091423 - Infrared photosensor: A thermal diode for a photosensor of a thermal imaging camera includes a semiconductor substrate having a surface and two doped structures set apart from each other on the surface. Furthermore, a device is provided for influencing a current between the first and the second structure, in order to reduce... Agent: Robert Bosch Gmbh

20140091422 - Thin film with improved temperature range: A device and a method of forming the same are disclosed. The device comprises a substrate and a thin film. The substrate is characterized by a first coefficient of thermal expansion. The thin film is attached to a surface of the substrate, and is characterized by a second coefficient of... Agent: Agilent Technologies, Inc.

20140091424 - Compound semiconductor device and manufacturing method thereof: A compound semiconductor device includes: a compound semiconductor layer; a protective insulating film that covers a top of the compound semiconductor layer and has an opening formed thereon; and an electrode that fills the opening, that is brought into contact with the compound semiconductor layer, and that is formed on... Agent:

20140091425 - Semiconductor integrated circuit device: In a semiconductor integrated circuit device including fuse elements for performing laser trimming processing, a dummy fuse formed of a first polycrystalline Si film is formed between the fuse elements formed of a second polycrystalline Si film, and a nitride film is formed on the dummy fuse. In this manner,... Agent: Seiko Instruments Inc.

20140091426 - Capacitor and method for making same: A system-on-chip (SOC) device comprises a first capacitor in a first region, a second capacitor in a second region, and may further comprise a third capacitor in a third region, and any additional number of capacitors in additional regions. The capacitors may be of different shapes and sizes. A region... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20140091427 - Electrical fuse and method of fabricating the same: An electrical fuse is provided. The electrical fuse includes an anode formed on a substrate, a cathode formed on the substrate, a fuse link connecting the anode and the cathode to each other, a first contact formed on the anode, and a second contact formed on the cathode and arranged... Agent:

20140091432 - Ceramic powder, semiconductor ceramic capacitor, and method for manufacturing same: A ceramic powder for use in a grain boundary insulated semiconductor ceramic that has an excellent ESD withstanding voltage, a semiconductor ceramic capacitor using the ceramic powder, and a manufacturing method therefor. The ceramic powder for use in a SrTiO3 based grain boundary insulated semiconductor ceramic has a specific surface... Agent: Murata Manufacturing Co., Ltd.

20140091428 - Land side and die side cavities to reduce package z-height: A package structure including a capacitor mounted within a cavity in the package substrate is disclosed. The package structure may additionally include a die mounted to a die side surface of the package substrate, and the opposing land side surface of the package substrate may be mounted to a printed... Agent:

20140091429 - Multilayer dielectric memory device: A memory device has multiple dielectric barrier regions. A memory device has multiple barrier regions that provide higher or lower current-voltage slope compared to a memory device having a single barrier region. The device also has electrode regions that provide further control over the current-voltage relationship.... Agent:

20140091431 - Semiconductor device: A semiconductor device manufacturing method includes forming a first capacitance film formed on the lower electrode; forming an intermediate electrode in a first region on the first capacitance film, wherein the first capacitance is interposed between the intermediate electrode and the lower electrode; forming a second capacitance film on the... Agent: Rohm Co., Ltd.

20140091430 - Semiconductor device including operative capacitors and dummy capacitors: The semiconductor device according to the present invention comprises a plurality of actually operative capacitors formed, arranged in an actually operative capacitor part over a semiconductor substrate and each including a lower electrode, a ferroelectric film and an upper electrode; a plurality of dummy capacitors formed, arranged in a dummy... Agent: Fujitsu Semiconductor Limited

20140091433 - Method of producing semiconductor wafer, and semiconductor wafer: There is provided a method of producing a semiconductor wafer, including: forming a compound semiconductor layer on a base wafer by epitaxial growth; cleansing a surface of the compound semiconductor layer by means of a cleansing agent containing a selenium compound; and forming an insulating layer on the surface of... Agent: Sumitomo Chemical Company, Limited

20140091436 - Epitaxial structure: An epitaxial structure is provided. The epitaxial structure includes a substrate, an first epitaxial layer, a second epitaxial layer, a first carbon nanotube layer and a second carbon nanotube layer. The first epitaxial layer is located on the substrate. The first carbon nanotube layer is located between the substrate and... Agent: Tsinghua University

20140091435 - Etching of block-copolymers: The present disclosure relates to a method (10) for block-copolymer lithography. This method comprises the step of obtaining (12) a self-organizing block-copolymer layer comprising at least two polymer components having mutually different etching resistances, and the steps of applying at least once each of first plasma etching (14) of said... Agent: Imec

20140091434 - Patterned bases, and patterning methods: Some embodiments include methods of patterning a base. First and second masking features are formed over the base. The first and second masking features include pedestals of carbon-containing material capped with silicon oxynitride. A mask is formed over the second masking features, and the silicon oxynitride caps are removed from... Agent: Micron Technology, Inc.

20140091437 - Chip package and method of manufacturing the same: A package includes a semiconductor device including an active surface having a contact pad. A redistribution layer (RDL) structure includes a first post-passivation interconnection (PPI) line electrically connected to the contact pad and extending on the active surface of the semiconductor device. An under-bump metallurgy (UBM) layer is formed over... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20140091438 - Multiple metal layer semiconductor device and low temperature stacking method of fabricating the same: A semiconductor device including a conductive element and an interface surface fabricated atop the conductive element, and a method for fabricating such a device are described. An exemplary device includes a substrate having a conductive element and a metal layer fabricated atop the conductive element. An oxide layer is fabricated... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20140091439 - Silicon shaping: One embodiment for forming a shaped substrate for an electronic device can form a shaped perimeter to define the substrate shape on the surface of a substrate. The shaped perimeter can extend at least part way into the substrate. A subsequent thinning process can remove substrate material and expose the... Agent: Apple Inc.

20140091441 - Ic wafer having electromagnetic shielding effects and method for making the same: An IC wafer and the method of making the IC wafer, the IC wafer includes an integrated circuit layer having a plurality of solder pads and an insulated layer arranged thereon, a plurality of through holes cut through the insulated layer corresponding to the solder pads respectively for the implantation... Agent: Xintec Inc.

20140091440 - System in package with embedded rf die in coreless substrate: Electronic assemblies and their manufacture are described. One assembly includes a coreless substrate comprising a plurality of dielectric layers and electrically conductive pathways, the coreless substrate including a first side and a second side opposite the first side. The assembly includes a first die embedded in the coreless substrate, the... Agent:

20140091442 - High density second level interconnection for bumpless build up layer (bbul) packaging technology: An apparatus including a die including a device side; and a build-up carrier including a body including a plurality of alternating layers of conductive material and dielectric material disposed on the device side of the die, an ultimate conductive layer patterned into a plurality of pads or lands; and a... Agent:

20140091443 - Surface mount package for a semiconductor integrated device, related assembly and manufacturing process: A surface mount package of a semiconductor device, has: an encapsulation, housing at least one die including semiconductor material; and electrical contact leads, protruding from the encapsulation to be electrically coupled to contact pads of a circuit board; the encapsulation has a main face designed to face a top surface... Agent: Stmicroelectronics (malta) Ltd

20140091444 - Semiconductor unit and method for manufacturing the same: A semiconductor unit includes a base, an insulating substrate bonded to the base, a conductive plate made of a metal of poor solderability, a semiconductor device mounted to the insulating substrate through the conductive plate, and a metal plate interposed between the conductive plate and the semiconductor device and made... Agent: Kabushiki Kaisha Toyota Jidoshokki

20140091445 - Bumpless build-up layer package including an integrated heat spreader: An example includes a die package including a microelectronic die having a lower die surface, an upper die surface parallel to the lower die surface, and a die side, the microelectronic die including an active region and an inactive region. The example optionally includes a heat spreader having a lower... Agent:

20140091446 - Semiconductor device employing aluminum alloy lead-frame with anodized aluminum: A semiconductor device comprises an aluminum alloy lead-frame with a passivation layer covering an exposed portion of the aluminum alloy lead-frame. Since aluminum alloy is a low-cost material, and its hardness and flexibility are suitable for deformation process, such as punching, bending, molding and the like, aluminum alloy lead frame... Agent:

20140091449 - Power quad flat no-lead (pqfn) semiconductor package with leadframe islands for multi-phase power inverter: According to an exemplary implementation, a power quad flat no-lead (PQFN) package includes a U-phase output node situated on a first leadframe island of a leadframe, a V-phase output node situated on a second leadframe island of said leadframe, and a W-phase output node situated on a W-phase die pad... Agent: International Rectifier Corporation

20140091447 - Semiconductor device and production method thereof: A semiconductor device according to an embodiment includes: a first unit device configured to include a semiconductor chip, a backside electrode that is in contact with a backside of the semiconductor chip, and a bonding wire in which one end is connected to the backside electrode; a second unit device... Agent: Kabushiki Kaisha Toshiba

20140091448 - Semiconductor package with corner pins: There are provided semiconductor packages having corner pins and methods for their fabrication. Such a semiconductor package includes a leadframe and a die paddle, the leadframe having first and second edge sides meeting to form a first corner. The semiconductor package also includes edge pins arrayed substantially parallel to the... Agent: Conexant Systems, Inc.

20140091450 - Semiconductor housing for smart cards: A semiconductor housing includes a front side with a semiconductor chip and a first metallization on a substrate, and a rear side with a second metallization. The rear side is situated opposite the front side of the semiconductor housing. The semiconductor housing further includes a first compensation layer applied on... Agent:

20140091451 - Semiconductor device comprising a crack stop structure: A semiconductor device may include at least one pad adjacent a top surface of the device, and a metal crack stop structure below the at least one pad. The metal crack structure may have an inner envelope and an outer envelope, and may be configured to be vertically aligned with... Agent: Stmicroelectronics (crolles 2) Sas

20140091452 - Semiconductor module with cooling mechanism and production method thereof: A semiconductor module is provided which includes a semiconductor unit which is made by a resin mold. The resin mold has formed therein a coolant path through which a coolant flows to cool a semiconductor chip embedded in the resin mold. The resin mold also includes heat spreaders, and electric... Agent: Denso Corporation

20140091453 - Cooling device and semiconductor device: A cooling device includes a base and a plurality of radiator fins. The base includes an exterior, an interior, an inlet, and an outlet. A heat generation element is connected to the exterior of the base. The radiator fins are located near the heat generation element in the interior of... Agent: Kabushiki Kaisha Toyota Jidoshokki

20140091454 - Semiconductor device and method of forming supporting layer over semiconductor die in thin fan-out wafer level chip scale package: A semiconductor device includes a semiconductor die. An encapsulant is formed around the semiconductor die. A build-up interconnect structure is formed over a first surface of the semiconductor die and encapsulant. A first supporting layer is formed over a second surface of the semiconductor die as a supporting substrate or... Agent: Stats Chippac, Ltd.

20140091455 - Semiconductor device and method of using a standardized carrier in semiconductor packaging: A semiconductor device has a carrier with a fixed size. A plurality of first semiconductor die is singulated from a first semiconductor wafer. The first semiconductor die are disposed over the carrier. The number of first semiconductor die on the carrier is independent from the size and number of first... Agent: Stats Chippac, Ltd.

20140091459 - Chip-size, double side connection package and method for manufacturing the same: A low resistance metal is charged into holes formed in a semiconductor substrate to thereby form through electrodes. Post electrodes of a wiring-added post electrode component connected together by a support portion thereof are simultaneously fixed to and electrically connected to connection regions formed on an LSI chip. On the... Agent: Invensas Corporation

20140091457 - Controlled solder height packages and assembly processes: An apparatus comprises a substrate including a surface and a plurality of bonding pads positioned on the surface. The apparatus also includes a material comprising a solder positioned on the bonding pads and extending a distance outward therefrom. A first of the bonding pads in a first location on the... Agent:

20140091458 - Encapsulated wafer-level chip scale (wlscp) pedestal packaging: Consistent with an example embodiment, there is semiconductor device assembled to resist mechanical damage. The semiconductor device comprises an active circuit defined on a top surface, contact areas providing electrical connection to the active circuit. There is a pedestal structure upon which the active circuit is mounted on an opposite... Agent: Nxp B.v.

20140091460 - Semiconductor device and method of fabricating the same: A stack of semiconductor chips, a semiconductor device, and a method of manufacturing are disclosed. The stack of semiconductor chips may comprise a first chip of the stack, a second chip of the stack over the first chip, conductive bumps, a homogeneous integral underfill material, and a molding material. The... Agent: Samsung Electronics Co., Ltd.

20140091456 - Using collapse limiter structures between elements to reduce solder bump bridging: Electrical connections are provided between the first and the second elements formed by heating solder bumps. At least one collapse limiter structure is coupled to at least one of the first and the second surfaces, wherein the at least one collapse limiter structure is between at least two of the... Agent:

20140091461 - Die cap for use with flip chip package: A die cap for use with flip chip packages, flip chip packages using a die cap, and a method for manufacturing flip chip packages with a die cap are provided in the invention. A die cap encases the die of flip chip packages about its top and sides for constraining... Agent:

20140091464 - Semiconductor device: The semiconductor device of the present invention includes a semiconductor substrate provided with semiconductor elements, a lower layer wiring pattern which includes first wiring and second wiring, the first wiring and the second wiring disposed separately so as to be flush with each other, and the first wiring and the... Agent: Rohm Co., Ltd.

20140091462 - Semiconductor package and fabrication method thereof: A semiconductor package is provided, which includes: a dielectric layer made of a material used for fabricating built-up layer structures; a conductive trace layer formed on the dielectric layer; a semiconductor chip is mounted on and electrically connected to the conductive trace layer; and an encapsulant formed over the dielectric... Agent: Siliconware Precision Industries Co., Ltd.

20140091463 - Semiconductor package apparatus: According to example embodiments of inventive concepts, a semiconductor package apparatus includes a first semiconductor package including a first substrate, a first solder resist layer on the first substrate, and a first sealing member that covers and protects the first solder resist layer, and a plurality of solder balls on... Agent:

20140091465 - Leadframe having sloped metal terminals for wirebonding: A method of assembling semiconductor devices includes dispensing a metal paste including metal particles in a solvent onto a bonding area of a plurality of metal terminals of a leadframe. The dispensing provides a varying thickness over the bonding area. The solvent is evaporated to form a sloped metal coating... Agent: Texas Instruments Incorporated

20140091466 - Pitch quartering to create pitch halved trenches and pitch halved air gaps: A silicon structure is fabricated determining a pattern for wire trenches and air gaps. The wire trenches are created, and certain trenches are used as air gaps. The remaining wire trenches are used for metallization of inter connecting wires.... Agent:

20140091467 - Forming barrier walls, capping, or alloys /compounds within metal lines: Described herein are techniques structures related to forming barrier walls, capping, or alloys/compounds such as treating copper so that an alloy or compound is formed, to reduce electromigration (EM) and strengthen metal reliability which degrades as the length of the lines increases in integrated circuits.... Agent:

20140091468 - Semiconductor device and manufacturing method thereof: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties... Agent: Renesas Electronics Corporation

20140091469 - Methods of providing dielectric to conductor adhesion in package structures: Methods of forming a microelectronic packaging structure and associated structures formed thereby are described. Those methods may include forming a CVD dielectric material on a package dielectric material, and then forming a conductive material on the CVD dielectric material.... Agent:

20140091471 - Apparatus and method for a component package: A component package and a method of forming are provided. A first component package may include a first semiconductor device having a pair of interposers attached thereto on opposing sides of the first semiconductor device. Each interposer may include conductive traces formed therein to provide electrical coupling to conductive features... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20140091470 - Die warpage control for thin die assembly: Die warpage is controlled for the assembly of thin dies. In one example, a device having a substrate on a back side and components in front side layers is formed. A backside layer is formed over the substrate, the layer resisting warpage of the device when the device is heated.... Agent:

20140091472 - Semiconductor device and manufacturing method of the same: A semiconductor element includes a plurality of electrodes on a main surface, a sealing resin covering at least a part of a side surface of the semiconductor element, and a first insulating layer formed on the main surface of the semiconductor element, a part of the side surface of the... Agent: Kabushiki Kaisha Toshiba

20140091476 - Directed self assembly of block copolymers to form vias aligned with interconnects: A method of an aspect includes forming an interconnect line etch opening in a hardmask layer. The hardmask layer is over a dielectric layer that has an interconnect line disposed therein. The interconnect line etch opening is formed aligned over the interconnect line. A block copolymer is introduced into the... Agent:

20140091474 - Localized high density substrate routing: Embodiments of a system and methods for localized high density substrate routing are generally described herein. In one or more embodiments an apparatus includes a medium, first and second circuitry elements, an interconnect element, and a dielectric layer. The medium can include low density routing therein. The interconnect element can... Agent:

20140091475 - Method and apparatus to improve reliability of vias: A semiconductor device comprising a first insulating layer, a first metal conductor layer formed over the first insulating layer, a second insulating layer comprising a low-k insulating material formed over the first metal conductor, a second metal conductor layer formed over the second insulating layer, vias formed in the second... Agent:

20140091473 - Novel three dimensional integrated circuits stacking approach: A semiconductor package and a method of forming a semiconductor package with one or more dies over an interposer die are provided. By forming a first redistribution structure over the interposer die with TSVs, the die(s) bonded to the interposer die can have edge(s) beyond the boundary of the interposer... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20140091478 - Semiconductor device: To provide a semiconductor device having a high efficiency of arranging a TSV, there is provided a semiconductor device which is stacked with a semiconductor chip, and in which the semiconductor chips contiguous each other are electrically connected by plural TSVs, the semiconductor chip includes a core circuit and plural... Agent:

20140091477 - System and method for chemical-mechanical planarization of a metal layer: A method for forming a field-effect transistor with a raised drain structure is disclosed. The method includes depositing a low-k inter-metal layer over a semiconductor substrate, depositing a porogen-containing low-k layer over the low-k inter-metal layer, and etching a space for the via through the low-k inter-metal layer and the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20140091479 - Semiconductor device with stacked semiconductor chips: A semiconductor chip 109 is mounted on a substrate 100, first wire group 120 and a second wire group 118 having a wire length shorter than the first wire group are provided so as to connect the substrate 100 and the semiconductor chip 109 to each other, and a sealing... Agent: Elpida Memory, Inc.

20140091480 - Dicing tape-integrated wafer back surface protective film: The present invention provides a dicing tape-integrated wafer back surface protective film including: a dicing tape including a base material and a pressure-sensitive adhesive layer formed on the base material; and a wafer back surface protective film formed on the pressure-sensitive adhesive layer of the dicing tape, in which the... Agent:

20140091481 - Semiconductor package: The invention provides a semiconductor package. The semiconductor package includes a substrate. A first conductive trace is disposed on the substrate. A first conductive trace disposed on the substrate. A semiconductor die is disposed over the first conductive trace. A solder resist layer that extends across an edge of the... Agent: Mediatek Inc.

20140091482 - Semiconductor device and method of depositing encapsulant along sides and surface edge of semiconductor die in embedded wlcsp: A semiconductor device has a semiconductor wafer including a plurality of semiconductor die. An insulating layer is formed over the semiconductor wafer. A portion of the insulating layer is removed by LDA to expose a portion of an active surface of the semiconductor die. A first conductive layer is formed... Agent: Stats Chippac, Ltd.

20140091483 - Method of manufacturing semiconductor apparatus and semiconductor apparatus: A method of manufacturing a semiconductor apparatus includes: a charging step of charging the thermosetting resin in excess of an amount necessary for forming the sealing layer to fill the inside of the first cavity with the thermosetting resin and discharging an excess of the thermosetting resin from the first... Agent: Shin-etsu Chemical Co., Ltd.

  
  
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