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Active solid-state devices (e.g., transistors, solid-state diodes)

20120112152 - Electronically controlled squishable composite switch: A method and apparatus for making analog and digital electronics which includes a composite including a squishable material doped with conductive particles. A microelectromechanical systems (MEMS) device has a channel made from the composite, where the channel forms a primary conduction path for the device. Upon applied voltage, capacitive actuators... Agent: Massachusetts Institute Of Technology

20120112151 - Methods of forming a crystalline pr1-xcaxmno3 (pcmo) material and methods of forming semiconductor device structures comprising crystalline pcmo: A method of forming a crystalline Pr1-xCaxMnO3 (PCMO) material includes forming an amorphous PCMO material, crystallizing the amorphous PCMO material, and removing a portion of the crystalline PCMO material. A semiconductor structure including the crystalline PCMO material is also disclosed where the crystalline PCMO material has a thickness of less... Agent: Micron Technology, Inc.

20120112153 - Nonvolatile memory device and method of manufacturing the same: Provided is a nonvolatile memory device which requires a lower initializing voltage such that the nonvolatile memory device can be operated at a low voltage. The nonvolatile memory device (10) includes: a first electrode layer (105) formed above a semiconductor substrate (100); a first oxygen-deficient tantalum oxide layer (106x) formed... Agent:

20120112150 - Post deposition adjustment of chalcogenide composition in chalcogenide containing semiconductors: The concentration of a constituent within a chalcogenide film used to form a chalcogenide containing semiconductor may be adjusted post deposition by reacting the chalcogenide film with a material in contact with the chalcogenide film. For example, a chalcogenide film containing tellurium may be coated with a titanium layer. Upon... Agent:

20120112154 - In via formed phase change memory cell with recessed pillar heater: A method for fabricating a phase change memory device including a plurality of in via phase change memory cells includes forming pillar heaters formed of a conductive material along a contact surface of a substrate corresponding to each of an array of conductive contacts to be connected to access circuitry,... Agent: International Business Machines Corporation

20120112155 - Interconnects for stacked non-volatile memory device and method: A method of forming a vertical interconnect for a memory device. The method includes providing a substrate having a surface region and defining a cell region, a first peripheral region, and a second peripheral region. A first thickness of dielectric material is formed overlying the surface region. A first bottom... Agent: Crossbar Inc.

20120112156 - Non-volatile memory devices having resistance changeable elements and related systems and methods: A non-volatile memory device may include a first wordline on a substrate, an insulating layer on the first wordline, and a second wordline on the insulating layer so that the insulating layer is between the first and second wordlines. A bit pillar may extend adjacent the first wordline, the insulating... Agent:

20120112157 - Nanowire sensor with angled segments that are differently functionalized: A nanowire device includes a nanowire 40 having differently functionalized segments 50, 51. Each of the segments 50, 51 is configured to interact with a species A, B to modulate the conductance of a segment 50, 51. The nanowire 40 is grown from a single catalyst 401 and the segments... Agent:

20120112158 - Epitaxial substrate, semiconductor light-emitting device using such epitaxial substrate and fabrication thereof: The invention provides an epitaxial substrate, a semiconductor light-emitting device using such epitaxial substrate and fabrication thereof. The epitaxial substrate according to the invention includes a crystalline substrate. In particular, a crystal surface of the crystalline substrate thereon has a plurality of randomly arranged nanorods. The plurality of nanorods is... Agent: Sino-american Silicon Products Inc.

20120112161 - Light emitting device with trenches and a top contact: A device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. A bottom contact disposed on a bottom surface of the semiconductor structure is electrically connected to one of the n-type region and the p-type region. A top contact disposed on... Agent: Koninklijke Philips Electronics N.v.

20120112163 - Light-emitting diode device structure with sixny layer: A light-emitting diode (LED) structure fabricated with a SixNy layer responsible for providing increased light extraction out of a surface of the LED is provided. Such LED structures fabricated with a SixNy layer may have increased luminous efficiency when compared to conventional LED structures fabricated without a SixNy layer. Methods... Agent:

20120112162 - Nitride based light emitting device: A nitride based light emitting device is disclosed. More particularly, a nitride based light emitting device capable of improving light emitting efficiency and reliability thereof is disclosed. The nitride based light emitting device includes a first conductive semiconductor layer connected to a first electrode, a second conductive semiconductor layer connected... Agent:

20120112159 - Nitride semiconductor light emitting element: A nitride semiconductor light emitting element includes: an n type nitride semiconductor layer formed on a substrate; a light emitting layer formed on the n type nitride semiconductor layer; and a p type nitride semiconductor layer formed on the light emitting layer. The n type nitride semiconductor layer is constituted... Agent: Sharp Kabushiki Kaisha

20120112160 - Solid state light emitting device and method for making the same: A method for making a solid state light emitting device includes: (a) forming a first cladding layer on a substrate; (b) forming a matrix layer above the first cladding layer, the matrix layer having a top surface and being formed with a plurality of isolated spaces; (c) epitaxially forming a... Agent: Lextar Electronics Corporation

20120112164 - Formation of a graphene layer on a large substrate: A single crystalline silicon carbide layer can be grown on a single crystalline sapphire substrate. Subsequently, a graphene layer can be formed by conversion of a surface layer of the single crystalline silicon layer during an anneal at an elevated temperature in an ultrahigh vacuum environment. Alternately, a graphene layer... Agent: International Business Machines Corporation

20120112165 - optical device: An improved optoelectronic device is described, which employs optically responsive nanoparticles and utilises a non-radiative energy transfer mechanism. The nanoparticles are disposed on the sidewalls of one or more cavities, which extend from the surface of the device through the electronic structure and penetrate the energy transfer region. The nanoparticles... Agent: University Of Southampton

20120112166 - Graphene based switching device having a tunable bandgap: A method of implementing bandgap tuning of a graphene-based switching device includes subjecting a bi-layer graphene to an electric field while simultaneously subjecting the bi-layer graphene to an applied strain that reduces an interlayer spacing between the bi-layer graphene, thereby creating a bandgap in the bi-layer graphene.... Agent: International Business Machines Corporation

20120112167 - Nanoscale electronic device: One example of the present invention is a nanoscale electronic device comprising a first conductive electrode, a second conductive electrode, and an anisotropic dielectric material layered between the first and second electrodes having a permittivity in a direction approximately that of the shortest distance between the first and second electrodes... Agent:

20120112168 - Coherent quantum information transfer between topological and conventional qubits: Computing bus devices that enable quantum information to be coherently transferred between topological and conventional qubits are disclosed. A concrete realization of such a topological quantum bus acting between a topological qubit in a Majorana wire network and a conventional semiconductor double quantum dot qubit is described, The disclosed device... Agent: Microsoft Coporation

20120112177 - Amine derivative and organic electroluminescent element: wherein R1 and R2 independently represent a substituted or unsubstituted C6-40 aryl or C5-40 heteroaryl group; and R3 and R4 independently represent a hydrogen atom, a straight-chain, branched or cyclic C1-18 alkyl or C1-18 alkoxy group, or a substituted or unsubstituted C6-40 aryl or C5-40 heteroaryl group, provided that R3... Agent: Tosoh Corporation

20120112176 - Aromatic amine derivative and organic electroluminescent device using same: Disclosed is an organic electroluminescence device in which an organic thin film which is composed of one or more layers including at least a light-emitting layer is interposed between a cathode and an anode. Since at least one layer of the organic thin film contains a novel aromatic amine derivative,... Agent: Idemitsu Kosan Co., Ltd.

20120112169 - Aromatic amine derivative, and organic electroluminescent element comprising same: s

20120112174 - Compound for organic optoelectronic device, organic light emitting diode including the same and display device including the organic light emitting diode: A compound for an organic optoelectronic device, an organic light emitting diode, and a display device, the compound including moieties represented by the following Chemical Formula 1; Chemical Formula 4; and one of Chemical Formulae 2 and 3;... Agent:

20120112170 - Cross-conjugated polymers for organic electronic devices and related methods: Cross-conjugated donor-acceptor polymers, methods for their preparation, devices that include polymers, and methods for the preparation and use of the devices.... Agent: University Of Washington

20120112172 - Display device, method of manufacturing display device, and electronic apparatus: Disclosed herein is a display device including a plurality of kinds of pixels that emit color light beams different from each other, the pixels being provided on a substrate, wherein each of the pixels includes an organic stacked film including one or more organic light emitting layers and another kind... Agent: Sony Corporation

20120112179 - Fluoranthene compound and organic electroluminescence device using same: s

20120112171 - Nonvolatile semiconductor memory device and method for manufacturing same: According to one embodiment, a nonvolatile semiconductor memory device includes a first stacked structure body, a first semiconductor layer, a first organic film, a first semiconductor-side insulating film, and a first electrode-side insulating film. The first stacked structure body includes a plurality of first electrode films stacked along a first... Agent: Kabushiki Kaisha Toshiba

20120112178 - Optoelectronic devices: An optoelectronic device comprises electon donor D and acceptor A semiconducting species and an intervening co-oligomeric or copolymeric species provided to alter the energy transfer characteristics of excitons to or from the interface between the said electron acceptor and donor species. The intervening species may be of the form Am-Xn-Do,... Agent: Cambridge Enterprise Limited

20120112173 - Organic el display device and method for production of the same: Disclosed herein is an organic electroluminescence display device including: a substrate; a plurality of lower electrodes formed thereon for each of a plurality of organic electroluminescence elements; a plurality of hole injecting/transporting layers capable of either hole injection or hole transportation which are formed on the lower electrodes for each... Agent: Sony Corporation

20120112175 - Photovoltaic devices comprising ion pairs: A photovoltaic (PV) device having an electron donor region and electron acceptor region, the donor and acceptor regions comprising conjugated polymers and/or molecular semiconductors, ion pairs being, preferably preferentially, located at, near or towards the interface between the donor and acceptor regions.... Agent:

20120112185 - High-performance diode device structure and materials used for the same: A diode and memory device including the diode, where the diode includes a conductive portion and another portion formed of a first material that has characteristics allowing a first decrease in a resistivity of the material upon application of a voltage to the material, thereby allowing current to flow there... Agent: Micron Technology, Inc.

20120112180 - Metal oxide thin film transistor and manufacturing method thereof: The instant disclosure relates to a metal oxide thin film transistor having a threshold voltage modification layer. The thin film transistor includes a gate electrode, a dielectric layer formed on the gate electrode, an active layer formed on the dielectric layer, a source electrode and a drain electrode disposed separately... Agent: National Chiao Tung University

20120112187 - Method for forming metal oxide film, metal oxide film and apparatus for forming metal oxide film: The present method of forming a metal oxide film can increase production efficiency while maintaining the low resistance of the metal oxide film. The present method of forming a metal oxide film includes first misting a solution containing a metallic element and ethylenediamine; meanwhile, heating a substrate; and then, supplying... Agent: Toshiba Mitsubishi-electric Indus. Sys. Corp.

20120112181 - Oxide semiconductor, thin film transistor including the same and thin film transistor display panel including the same: An oxide semiconductor including: (A) at least one element of zinc (Zn) and tin (Sn); and (B) at least one element of arsenic (As), antimony (Sb), chromium (Cr), cerium (Ce), tantalum (Ta), neodymium (Nd), niobium (Nb), scandium (Sc), yttrium (Y), and hafnium (Hf), is provided.... Agent: Samsung Electronics Co., Ltd.

20120112184 - Semiconductor device and manufacturing method thereof: A semiconductor device having a novel structure or a method for manufacturing the semiconductor device is provided. For example, the reliability of a transistor which is driven at high voltage or large current is improved. For improvement of the reliability of the transistor, a buffer layer is provided between a... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120112183 - Semiconductor device and method for manufacturing the same: An object is to provide a semiconductor device including an oxynitride semiconductor whose carrier density is controlled. By introducing controlled nitrogen into an oxide semiconductor layer, a transistor in which an oxynitride semiconductor having desired carrier density and on characteristics is used for a channel can be manufactured. Further, with... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120112182 - Thin film transistor and a method of manufacturing the same: Disclosed herein is a method of manufacturing a thin film transistor having a structure that a gate electrode and an oxide semiconductor layer are disposed with a gate insulating film interposed between the gate electrode and the oxide semiconductor layer, and a source/drain electrode is electrically connected to the oxide... Agent: Sony Corporation

20120112186 - Treatment of gate dielectric for making high performance metal oxide and metal oxynitride thin film transistors: Embodiments of the present invention generally include TFTs and methods for their manufacture. The gate dielectric layer in the TFT may affect the threshold voltage of the TFT. By treating the gate dielectric layer prior to depositing the active channel material, the threshold voltage may be improved. One method of... Agent: Applied Materials, Inc.

20120112190 - Epitaxial silicon wafer and method for manufacturing same: It is an object to provide an epitaxial silicon wafer that is provided with an excellent gettering ability in which a polysilicon layer is formed on the rear face side of a silicon crystal substrate into which phosphorus (P) and germanium (Ge) have been doped. A silicon epitaxial layer is... Agent: Sumco Corporation

20120112188 - Semiconductor light-emitting device, manufacturing method thereof, and lamp: A semiconductor light-emitting device which includes: a single-crystal substrate formed with a plurality of projection portions on a c-plane main surface; an intermediate layer which is formed to cover the main surface of the single-crystal substrate, in which a film thickness t2 on the projection portion is smaller than a... Agent: Showa Denko K.k.

20120112189 - Spin injection device having semiconductor-ferromagnetic-semiconductor structure and spin transistor: A spin injection device and spin transistor including a spin injection device. A spin injection device includes different semiconductor materials and a spin-polarizing ferromagnetic material there between. The semiconductor materials may have different crystalline structures, e.g., a first material can be polycrystalline or amorphous silicon, and a second material can... Agent: The Regents Of The University Of California

20120112192 - Power storage device: A semiconductor device comprises a thin film transistor provided over a substrate having an insulating surface, and an electrode penetrating the substrate. The thin film transistor is provided between a first structural body and a second structural body, which has a higher rigidity than the first structural body, which serve... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120112191 - Semiconductor device: A data retention period in a semiconductor device or a semiconductor memory device is lengthened. The semiconductor device or the semiconductor memory includes a memory circuit including a first transistor including a first semiconductor layer and a first gate and a second transistor including a second semiconductor layer, a second... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120112197 - Active matrix substrate and active matrix display device: A stem wiring (13a) having a broad line width is formed above branch wirings (13b) having a narrow line width. In a region where the stem wiring (13a) is connected to the branch wiring (13b), the stem wiring (13a) overlaps with the branch wiring (13b) via a gate insulating film... Agent: Sharp Kabushiki Kaisha

20120112195 - Array substrate and manufacturuing method thereof, active display: A manufacturing method for an array substrate comprising: sequentially forming a gate metal film, a gate insulating layer and an active layer film; applying photoresist, and patterning the photoresist; etching the stacked layers corresponding to a photoresist-completely-removed region; ashing to remove the photoresist in a photoresist-partially-remained region and remain a... Agent: Boe Technology Group Co., Ltd.

20120112194 - Semiconductor device and display device: It is an object to provide a technique to improve electric characteristics after a high-temperature treatment even when a high melting point metal barrier layer is not formed. A semiconductor device includes a gate electrode formed on a transparent insulation substrate, a semiconductor layer having a Si semiconductor active film... Agent: Mitsubishi Electric Corporation

20120112196 - Thin film transistor and manufacturing method thereof: The present invention provides a structure of the TFT in which a current-voltage characteristic can be improved. The present invention refers to a thin film transistor comprising a lamination layer wherein a first conductive film, a first insulating film and a second conductive film are sequentially laminated, a semiconductor film... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120112193 - Transistor array substrate: A transistor array substrate includes a substrate, a plurality of scan lines, a plurality of data lines, and a plurality of pixel units. The scan lines, the data lines, and the pixel units are all disposed on the substrate. Each pixel unit includes a first transistor, a second transistor, a... Agent: Chunghwa Picture Tubes, Ltd.

20120112198 - Epitaxial growth of silicon carbide on sapphire: remove impurities from an exposed surface in the ultrahigh vacuum environment. A high qualify single crystalline or polycrystalline silicon carbide film can be grown directly on the sapphire substrate by chemical vapor deposition employing a silicon-containing reactant and a carbon-containing reactant. Formation of single crystalline silicon carbide has been verified... Agent: International Business Machines Corporation

20120112200 - Liquid crystal panel and liquid crystal display: A liquid crystal panel, comprising: an array substrate including: a display area, in which pixels disposed, wherein the pixel includes: a switching device; a lower electrode; an insulating layer formed on the lower electrode; an upper electrode, which has a plurality of slits to generate a fringe electric field; and... Agent: Mitsubishi Electric Corporation

20120112199 - Thin film transistor array panel: A thin film transistor array panel according to an exemplary embodiment of the present invention floats all data lines during a manufacturing process by forming the data lines DL separate from each other and separate from the data pad connecting lines DLL, and only connecting the lines DL to the... Agent:

20120112202 - E-mode high electron mobility transistors and methods of manufacturing the same: An Enhancement-mode (E-mode) high electron mobility transistor (HEMT) includes a channel layer with a 2-Dimensional Electron Gas (2DEG), a barrier layer inducing the 2DEG in the channel layer, source and drain electrodes on the barrier layer, a depletion layer on the barrier layer between the source and drain electrodes, and... Agent: Samsung Electronics Co., Ltd.

20120112203 - Group-iii nitride semiconductor device, method for fabricating group-iii nitride semiconductor device, and epitaxial substrate: Provided is a Group III nitride semiconductor device, which comprises an electrically conductive substrate including a primary surface comprised of a first gallium nitride based semiconductor, and a Group III nitride semiconductor region including a first p-type gallium nitride based semiconductor layer and provided on the primary surface. The primary... Agent: Sumitomo Electric Industries, Ltd.

20120112201 - High melting point soldering layer and fabrication method for the same, and semiconductor device: A high melting point soldering layer includes a low melting point metal layer, a first high melting point metal layer disposed on a surface of the low melting point metal layer, and a second high melting point metal layer disposed at a back side of the low melting point metal... Agent: Rohm Co., Ltd.

20120112204 - Nitride semiconductor light emitting device and epitaxial substrate: For a nitride semiconductor light emitting device, a c-axis vector of hexagonal GaN of a support substrate is inclined to an X-axis direction with respect to a normal axis Nx normal to a primary surface. In a semiconductor region an active layer, a first gallium nitride-based semiconductor layer, an electron... Agent: Sumitomo Electric Industries, Ltd.

20120112205 - Semiconductor structures and devices including semiconductor material on a non-glassy bonding layer: Methods of fabricating semiconductor structures and devices include bonding a seed structure to a substrate using a glass. The seed structure may comprise a crystal of semiconductor material. Thermal treatment of the seed structure bonded to the substrate using the glass may be utilized to control a strain state within... Agent: Soitec

20120112206 - Asymmetric hetero-structure fet and method of manufacture: An asymmetric hetero-structure FET and method of manufacture is provided. The structure includes a semiconductor substrate and an epitaxially grown semiconductor layer on the semiconductor substrate. The epitaxially grown semiconductor layer includes an alloy having a band structure and thickness that confines inversion carriers in a channel region, and a... Agent: International Business Machines Corporation

20120112207 - Method to reduce ground-plane poisoning of extremely-thin soi (etsoi) layer with thin buried oxide: The present disclosure, which is directed to ultra-thin-body-and-BOX and Double BOX fully depleted SOI devices having an epitaxial diffusion-retarding semiconductor layer that slows dopant diffusion into the SOI channel, and a method of making these devices. Dopant concentrations in the SOI channels of the devices of the present disclosure having... Agent: International Business Machines Corporation

20120112209 - Silicon carbide substrate fabrication method, semiconductor device fabrication method, silicon carbide substrate, and semiconductor device: A method of fabricating a silicon carbide substrate that can reduce the fabrication cost of a semiconductor device employing the silicon carbide substrate includes the steps of: preparing a SiC substrate made of single crystal silicon carbide; arranging a base substrate in a vessel so as to face one main... Agent: Sumitomo Electric Industries, Ltd.

20120112208 - Stressed transistor with improved metastability: An embedded, strained epitaxial semiconductor material, i.e., an embedded stressor element, is formed at the footprint of at least one pre-fabricated field effect transistor that includes at least a patterned gate stack, a source region and a drain region. As a result, the metastability of the embedded, strained epitaxial semiconductor... Agent: International Business Machines Corporation

20120112210 - Light emitting device and method for manufacturing the same: A light emitting device includes a substrate and a plurality of pixel rows. The pixel rows are arranged on the substrate. Each of the pixel rows includes a first sub-pixel row having a plurality of first sub-pixels, a second sub-pixel row having a plurality of second sub-pixels, and a third... Agent: Au Optronics Corporation

20120112211 - Silicone resin, sealing material, and optical semiconductor device: (where R1 represents a monovalent hydrocarbon group, R2 represents hydrogen or a monovalent hydrocarbon group, and the molar ratio of monovalent hydrocarbon group: hydrogen in R2 in the cage octasilsesquioxane as a whole is, as an average value, in a range of 6.5:1.5 to 5.5:2.5).... Agent: Nitto Denko Corporation

20120112214 - Active device array substrate: An active device array substrate is provided. First, a substrate having a display area and a sensing area is provided. Then, a first patterned conductor layer is disposed on the display area of the substrate. A gate insulator is disposed on the substrate. A patterned semiconductor layer, a second patterned... Agent: Au Optronics Corporation

20120112213 - Display substrate, method for manufacturing the same, and display apparatus having the same: A display substrate includes a substrate, a gate line formed on the substrate, a data line formed on the substrate and crossing the gate line, a first pixel electrode formed on the substrate on which the gate and the data line are formed, an insulation layer formed on the substrate... Agent: Samsung Electronics Co., Ltd.

20120112212 - Organic light emitting diode display and method of manufacturing the same: An organic light emitting diode (OLED) display is disclosed. In one embodiment, the OLED display includes first and second substrates, an OLED interposed between the first and second substrates and an external sealant formed between the first and second substrates and configured to i) substantially seal the first and second... Agent: Samsung Mobile Display Co., Ltd.

20120112215 - Led-based light source utilizing asymmetric conductors: A light source and method for making the same are disclosed. The light source includes a plurality of surface mount LEDs that are bonded to a mounting substrate by a layer of asymmetric conductor. Each LED has surface mount contacts on a first surface thereof and emits light from a... Agent:

20120112217 - Organic el display panel: Disclosed is an organic EL display panel provided with a substrate and a plurality of sub-pixels that are disposed in a matrix upon the substrate, wherein: the sub-pixels comprise sub-pixels that emit red light, sub-pixels that emit green light, and sub-pixels that emit blue light; the sub-pixels are each provided... Agent: Panasonic Corporation

20120112216 - Single color led clusters for image generation: A display device for increasing brightness of an image generation, including a color cluster system, is provided. The system includes a first color LED cluster having at least a first LED of a first wavelength within a first color range and a second LED of a second different wavelength within... Agent: Seiko Epson Corporation

20120112219 - Gradient composite material and method of manufacturing the same: Method of manufacturing gradient composite material comprises steps of providing plural surface modified inorganic nanoparticles with functional groups or oligomers with functional groups; transferring the surface modified inorganic nanoparticles or oligomers with functional groups into an organic matrix to form a mixture; performing a photo polymerization step or a thermo-polymerization... Agent: Industrial Technology Research Institute

20120112230 - Integrated antenna device module for generating terahertz continous wave and fabrication method thereof: The exemplary embodiments of the present invention include forming a photoconductor thin film on a front surface of a substrate; forming a photoconductor thin film pattern by patterning the photoconductor thin film; and forming a metal electrode on the photoconductor thin film pattern.... Agent: Electronics And Telecommunications Research Institute

20120112236 - Led chip assembly, led package, and manufacturing method of led package: Provided is a highly reliable LED package with significantly improved heat radiating properties, manufacturing method of the LED package, and an LED chip assembly used in the LED package. The LED package is characterized in that the LED chip assembly (10) is bonded to a circuit board (11) created by... Agent: Denki Kagaku Kogyo Kabushiki Kaisha

20120112222 - Led lighting device: A LED lighting device includes a substrate defining a groove formed by a sidewall and a bottom, a LED chip received in the groove, a reflector attached to the side wall, a circuit protection module electrically connected with the LED chip, and a notch defined on the bottom for receiving... Agent: Aac Acoustic Technologies (shenzhen) Co., Ltd.

20120112223 - Led package: An LED package includes a substrate, an LED chip, a transparent thermal insulation layer and an encapsulation including phosphor. The LED chip is arranged on the substrate and electrically connected to the substrate. The transparent thermal insulation layer is located between the LED package and the package layer whereby the... Agent: Advanced Optoelectronic Technology, Inc.

20120112221 - Led package structure and manufacturing method for the same: The LED package structure of the invention includes a substrate (1), an LED chip (2) mounted on the substrate (1) and a lens (3) covering the LED chip (2). A light penetrable film (4) whose refractive index is between those of the lens (3) and LED chip (2) is formed... Agent: Liang Meng Plastic Share Co., Ltd.

20120112220 - Led-based light source utilizing asymmetric conductors: A light source includes LED dies that are flip-chip mounted on a flexible plastic substrate. The LED dies are attached to the substrate using an asymmetric conductor material with deformable conducting particles sandwiched between surface mount contacts on the LED dies and traces on the substrate. A diffusively reflective material... Agent: Bridgelux, Inc.

20120112231 - Light emitting device and light emitting device package having the same: Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers, an electrode on... Agent: Lg Innotek Co., Ltd.

20120112228 - Light emitting device and manufacturing method thereof: A light emitting device includes: a substrate; a light emitting element disposed on the substrate; a wavelength conversion unit disposed on the substrate to cover at least an upper surface of the light emitting element; and a reflection unit formed to cover a side surface and a lower surface of... Agent:

20120112229 - Light emitting device package and method of manufacturing the same: A light emitting device package includes: first and second electrodes, at least a portion of a lower surface thereof being exposed; a light emitting device disposed on an upper surface of at least one of the first and second electrodes; a reflection wall disposed on the upper surface of the... Agent:

20120112218 - Light emitting diode with polarized light emission: An apparatus for emitting polarized light and a method for fabricating such apparatus are provided. The apparatus includes a surface emission light emitting diode (LED), a first electrode, and a sub-wavelength metal grating (SWMG). The surface emission LED includes a first contact surface and a second contact surface. The first... Agent: Agency For Science, Technology And Research

20120112226 - Light-emitting diode and method for the production of a light-emitting diode: A light emitting diode includes a semiconductor body including an active region that produces radiation, a carrier body fastened to the semiconductor body on an upper side of the semiconductor body, the carrier body including a luminescence conversion material consisting of a ceramic luminescence conversion material, a mirror layer applied... Agent: Osram Opto Semiconductors Gmbh

20120112235 - Luminous device having a flexible printed circuit board: A lighting device (1;15) comprising at least one flexible printed circuit board (3) which is populated with at least one semiconductor light source, comprising a potting material overlaid on at least one populated side of the printed circuit board so as to leave at least one emission surface of the... Agent:

20120112224 - Method for producing a structure with a textured external surface, intended for an organic light emitting diode device, and a structure with a textured external surface: A process for obtaining a structure having a textured external surface for an organic light-emitting device, which structure includes a mineral glass substrate having a surface which is provided with projections and depressions, the process including the deposition of an etching mask on the surface of the substrate and the... Agent: Saint-gobain Glass France

20120112225 - Method for producing an organic light-emitting diode device having a structure with a textured surface and resulting oled having a structure with a textured surface: A process for manufacturing an organic light-emitting diode device bearing a structure having a textured outer surface including a substrate made of inorganic glass that forms the support of the organic light-emitting diode device, includes: manufacturing the structure having a textured outer surface including: vapor depositing, onto the substrate made... Agent: Saint-gobain Glass France

20120112234 - Organic el panel: Each pixel includes a region where a lower reflection film is not present. In each pixel, there is a region where a microcavity structure is formed between a counter electrode and a lower reflection film and another region where the microcavity structure is not formed. The regions differentiated in cavity... Agent: Sanyo Electric Co., Ltd.

20120112227 - Semiconductor light emitting device: A semiconductor light emitting device includes an LED chip, which includes an n-type semiconductor layer, active layer, and p-type semiconductor layer stacked on a substrate. The LED chip further includes an anode electrode connected to the p-type semiconductor, and a cathode connected to the n-type semiconductor. The anode and cathode... Agent: Rohm Co., Ltd.

20120112232 - Semiconductor light emitting device: Disclosed are a semiconductor light emitting device. The semiconductor light emitting device comprises a light emitting structure comprising a plurality of compound semiconductor layers, a passivation layer at the outside of the light emitting structure, a first electrode layer on the light emitting structure, and a second electrode layer under... Agent:

20120112233 - Semiconductor light emitting device: Discussed is a semiconductor light emitting device. The semiconductor light emitting device includes a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, a second electrode layer under the second conductive semiconductor layer, and a transmissive conductive... Agent:

20120112237 - Led package structure: The present invention provides an LED package structure which has a housing, a first electrode plate, a second electrode plate, a LED chip and a Zener diode. The LED chip is mounted in the recess, and a first electrode and a second electrode of the LED chip are electrically connected... Agent: Shenzhen China Star Optoelectronics Technology Co. Ltd.

20120112238 - Microelectronic interconnect substrate and packaging techniques: A LED (Light Emitting Diode) substrate and packaging for a single diode or a diode array is described. The substrate includes an integral reflector(s) for the diode(s) in the form of a shaped cavity (or cavities) to house the diode die(s). The reflector cavity walls can optionally be plated with... Agent: Micro Components Ltd.

20120112239 - Nitride semiconductor light-emitting device and method for fabricating thereof: Disclosed is a nitride semiconductor light-emitting device, including a substrate, a nitride semiconductor layer including a first conductive layer, an active layer and a second conductive layer located on the substrate, a first electrode formed on the first conductive layer, and a second electrode formed on the second conductive layer,... Agent:

20120112240 - Semiconductor device: An N type layer made of an N type epitaxial layer in which an N+ type drain layer etc are formed is surrounded by a P type drain isolation layer extending from the front surface of the N type epitaxial layer to an N+ type buried layer. A P type... Agent: On Semiconductor Trading, Ltd.

20120112241 - Semiconductor device: According to one embodiment, a semiconductor device includes a main element and a sense element. The main element is connected between a collector terminal and an emitter terminal. The main element has an insulated gate bipolar transistor structure. The sense element is connected in parallel with the main element via... Agent: Kabushiki Kaisha Toshiba

20120112242 - Semiconductor body with strained region: A semiconductor body comprised of a semiconductor material includes a first monocrystalline region of the semiconductor material having a first lattice constant along a reference direction, a second monocrystalline region of the semiconductor material having a second lattice constant, which is different than the first, along the reference direction, and... Agent: Infineon Technologies Austria Ag

20120112243 - Bipolar and fet device structure: A semiconductor structure includes a heterojunction bipolar transistor (HBT) including a collector layer located over a substrate, the collector layer including a semiconductor material, and a field effect transistor (FET) located over the substrate, the FET having a channel formed in the semiconductor material that forms the collector layer of... Agent:

20120112244 - Vertical heterojunction bipolar transistors with reduced base-collector junction capacitance: Vertical heterojunction bipolar transistors with reduced base-collector junction capacitance, as well as fabrication methods for vertical heterojunction bipolar transistors and design structures for BiCMOS integrated circuits. The vertical heterojunction bipolar transistor includes a barrier layer between the intrinsic base and the extrinsic base that blocks or reduces diffusion of a... Agent: International Business Machines Corporation

20120112245 - Accessing or interconnecting integrated circuits: Multiple integrated circuits (ICs) die, from different wafers, can be picked-and-placed, front-side planarized using a vacuum applied to a planarizing disk, and attached to each other or a substrate. The streets between the IC die can be filled, and certain techniques or fixtures allow application of monolithic semiconductor wafer processing... Agent: Crossfire Technologies, Inc.

20120112246 - Devices having reduced susceptibility to soft-error effects and method for fabrication: A semiconductor-on-insulator (SOI) substrate complementary metal oxide semiconductor (CMOS) device and fabrication methods include a p-type field effect transistor (PFET) and an n-type field effect transistor (NFET). Each of the PFET and the NFET include a transistor body of a first type of material and source and drain regions. The... Agent: International Business Machines Corporation

20120112247 - Image sensor for imaging at a very low level of light: A basic device for an image sensor includes a photogeneration and charge-collecting region formed at the surface of a semiconductor substrate having a first type of conductivity, adapted to be biased at a reference voltage, the photogeneration region being associated with a device for the transfer, multiplication, and insulation of... Agent: Commissariat A L'energie Atomique Et Aux Energies Alternatives

20120112248 - Mechanisms for forming ultra shallow junction: The embodiments of methods and structures are for doping fin structures by plasma doping processes to enable formation of shallow lightly doped source and drain (LDD) regions. The methods involve a two-step plasma doping process. The first step plasma process uses a heavy carrier gas, such as a carrier gas... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120112249 - High performance semiconductor device and method of fabricating the same: A method for fabricating a semiconductor device employs the way of first performing thermal annealing to the source/drain regions and then forming an ion-implanted region, such as a retrograde well. The method comprises the steps of: removing said dummy gate so as to expose said dummy gate dielectric layer and... Agent: Institute Of Microelectronics, Chinese Academy Of Sciences

20120112251 - Reduction of random telegraph signal (rts) and 1/f noise in silicon mos devices, circuits, and sensors: The effects of random telegraph noise signal (RTS) or equivalently l/f noise on MOS devices, circuits, and sensors is described. Techniques are disclosed for minimizing this RTS and low frequency noise by minimizing the number of ionized impurity atoms in the wafer, substrate, well, pillar, or fin behind the channel... Agent:

20120112250 - Semiconductor device including graphene and method of manufacturing the semiconductor device: In a semiconductor device including graphene, a gate insulating layer may be formed between a gate electrode and a graphene layer, and an interlayer insulating layer may be formed under a portion of the graphene layer under which the gate insulating layer is not formed. The gate insulating layer may... Agent: Samsung Electronics Co., Ltd.

20120112252 - Semiconductor structure and method for manufacturing the same: The present invention provides a method for manufacturing a semiconductor structure, which lies in covering a first dielectric layer with a second dielectric layer, forming a first contact hole with a small inner diameter within the second dielectric layer first, then etching the first dielectric layer to form a second... Agent: Institute Of Microelectronics, Chinese Academy Of Sciences

20120112253 - Semiconductor image pickup device: According to one embodiment, a semiconductor image pickup device includes a pixel area and a non-pixel area. The device includes a first photoelectric conversion element formed in the pixel area, a first transistor formed in the pixel area and connected to the first photoelectric conversion element, a second photoelectric conversion... Agent:

20120112255 - Solid-state image sensor: A floating diffusion region is formed at an edge of a light-receiving surface of an embedded photodiode, with a transfer gate electrode located therebetween. A first region, with radially extending portions centered on the FD region, and a second region, located to the outside of the first region, are created... Agent: Shimadzu Corporation

20120112254 - Solid-state imaging device and manufacturing method thereof, and electronic apparatus: A solid-state imaging device includes a photoelectric conversion unit that is formed on a semiconductor substrate, a reading unit that reads signal charges of the photoelectric conversion unit, a gate insulating film and an electrode disposed thereon that constitute the reading unit, a light shielding film that covers the electrode,... Agent: Sony Corporation

20120112256 - Control gate structure and method of forming a control gate structure: Semiconductor devices and methods of fabricating the devices are provided. An example device may include a substrate and a gate structure on the substrate. The gate structure includes a control gate having at least three distinct gate regions. First and second control gate regions are configured as a first field... Agent: Globalfoundries Singapore Pte, Ltd.

20120112259 - Integrated circuit with protection from copper extrusion: An integrated circuit may include an element placed in an insulating region adjacent to a copper metallization level and including a barrier layer in contact with a metallization level. The element may be electrically connected to and spaced away from a copper line of the metallization level by way of... Agent: Stmicroelectronics (crolles 2) Sas

20120112257 - Semiconductor device: Provided is a semiconductor device with a novel structure in which stored data can be retained even when power is not supplied, and which does not have a limitation on the number of writing. The semiconductor device includes both a memory circuit including a transistor including an oxide semiconductor (in... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120112258 - Semiconductor device and method of forming the same: A semiconductor device includes the following elements. A semiconductor substrate has a device formation region. The device formation region is defined by first and second device isolation regions which extend in first and second directions, respectively. The device formation region has a first gate groove which extends in the second... Agent: Elpida Memory, Inc.

20120112260 - Three-dimensional semiconductor memory devices: Provided are three-dimensional semiconductor devices. The device includes conductive patterns stacked on a substrate, and an active pattern penetrating the conductive patterns to be connected to the substrate. The active pattern includes a first doped region disposed adjacent to at least one of the conductive patterns, and a diffusion-resistant doped... Agent: Samsung Electronics Co., Ltd.

20120112261 - Flash memory device and method for manufacturing the same: The present invention provides a FinFET flash memory device and the method for manufacturing the same. The flash memory device is on an insulating layer, comprising: a first fin and a second fin, wherein the second fin is a control gate of the device; a gate dielectric layer, at side... Agent: Institute Of Microelectronics ,chinese Academy Of Sciences

20120112262 - Method for producing a floating gate memory structure: Disclosed are methods for manufacturing floating gate memory devices and the floating gate memory devices thus manufactured. In one embodiment, the method comprises providing a monocrystalline semiconductor substrate, forming a tunnel oxide layer on the substrate, and depositing a protective layer on the tunnel oxide layer to form a stack... Agent: Imec

20120112263 - Semiconductor device and method for manufacturing the same: A semiconductor device includes a semiconductor substrate, a first insulating film formed on the semiconductor substrate, a charge storage layer formed on the first insulating film, a second insulating film formed on the charge storage layer, and a control electrode formed on the second insulating film, the second insulating film... Agent:

20120112265 - Non-volatile semiconductor memory device: A non-volatile semiconductor device includes an n type well formed in a semiconductor substrate having a surface, the surface having a plurality of stripe shaped grooves and a plurality of stripe shaped ribs, a plurality of stripe shaped p type diffusion regions formed in upper parts of each of the... Agent: Genusion, Inc.

20120112264 - Three-dimensional semiconductor devices and methods of fabricating the same: A three-dimensional semiconductor device includes an upper structure on a lower structure, the upper structure including conductive patterns, a semiconductor pattern connected to the lower structure through the upper structure, and an insulating spacer between the semiconductor pattern and the upper structure, a bottom surface of the insulating spacer being... Agent:

20120112267 - Semiconductor device and manufacturing method of the same: Disclosed herein is a semiconductor device including: a first conductivity type semiconductor base body; a first conductivity type pillar region; second conductivity type pillar regions; element and termination regions provided in the first and second conductivity type pillar regions, transistors being formed in the element region, and no transistors being... Agent: Sony Corporation

20120112266 - Semiconductor device and method for manufacturing the same: A semiconductor device of the present invention includes: a semiconductor substrate of a first conductive type; an epitaxial layer of the first conductive type formed on the semiconductor substrate and having a protrusion formed on a surface thereof; a well region of a second conductive type formed on the surface... Agent: Mitsubishi Electric Corporation

20120112269 - Semiconductor device and method of manufacturing the same: A technology is a semiconductor device and a method of manufacturing the same, capable of reducing capacitance with a storage node contact plug while maintaining a height and resistance of a bit line, by thickly forming a spacer between a bit line and the storage node contact plug. A semiconductor... Agent: Hynix Semiconductor Inc.

20120112271 - Semiconductor device, method of forming semiconductor device, and data processing system: A semiconductor device includes the following elements. A semiconductor substrate includes an isolation region. The semiconductor substrate has a groove in the isolation region. A pad electrode is disposed in the groove. A pad contact plug is disposed in the groove. The pad contact plug is disposed on the pad... Agent: Elpida Memory, Inc.

20120112268 - Termination structure of power semiconductor device and manufacturing method thereof: The present invention provides a termination structure of a power semiconductor device and a manufacturing method thereof. The power semiconductor device has an active region and a termination region. The termination region surrounds the active region, and the termination structure is disposed in the termination region. The termination structure includes... Agent:

20120112270 - Vertical transistor having buried junction and method for manufacturing the same: A buried junction is formed in a vertical transistor of a semiconductor device. Wall bodies are formed from a semiconductor substrate, the wall bodies protruding while having a first side surface and a second side surface in the opposite side of the first side surface; forming a one side contact... Agent: Hynix Semiconductor Inc.

20120112273 - Semiconductor device: A semiconductor device includes: a semiconductor substrate; a vertical type trench gate MOS transistor; a Schottky barrier diode; multiple trenches having a stripe pattern to divide an inner region into first and second separation regions; and a poly silicon film in each trench. The first separation region includes a first... Agent: Denso Corporation

20120112272 - Semiconductor device comprising transistor structures and methods for forming same: A method for forming an opening within a semiconductor material comprises forming a neck portion, a rounded portion below the neck portion and, in some embodiments, a protruding portion below the rounded portion. This opening may be filled with a conductor, a dielectric, or both. Embodiments to form a transistor... Agent: Micron Technology, Inc.

20120112275 - Drain extended cmos with counter-doped drain extension: An integrated circuit containing a diode with a drift region containing a first dopant type plus scattering centers. An integrated circuit containing a DEMOS transistor with a drift region containing a first dopant type plus scattering centers. A method for designing an integrated circuit containing a DEMOS transistor with a... Agent: Texas Instruments Incorporated

20120112274 - Semiconductor device and method of fabricating the same: According to one embodiment, a semiconductor device, including a semiconductor layer including a first region and a second region isolated from the first region, a source in a surface of the first region, a drain in a surface of the second region, a back-gate in the surface of the first... Agent: Kabushiki Kaisha Toshiba

20120112276 - Anti punch-through leakage current metal-oxide-semiconductor transistor and manufacturing method thereof: An anti punch-through leakage current MOS transistor and a manufacturing method thereof are provided. A high voltage deep first type well region and a first type light doping region are formed in a second type substrate. A mask with a dopant implanting opening is formed on the second type substrate.... Agent: United Microelectronics Corp.

20120112278 - Electronic device including a well region: An electronic device including an integrated circuit can include a buried conductive region and a semiconductor layer overlying the buried conductive region, and a vertical conductive structure extending through the semiconductor layer and electrically connected to the buried conductive region. The integrated circuit can further include a doped structure having... Agent: Semiconductor Components Industries, LLC

20120112277 - Integrated lateral high voltage mosfet: An integrated circuit containing a dual drift layer extended drain MOS transistor with an upper drift layer contacting a lower drift layer along at least 75 percent of a common length of the two drift layers. An average doping density in the lower drift layer is between 2 and 10... Agent: Texas Instruments Incorporated

20120112280 - Butted soi junction isolation structures and devices and method of fabrication: A structure, a FET, a method of making the structure and of making the FET. The structure including: a silicon layer on a buried oxide (BOX) layer of a silicon-on-insulator substrate; a trench in the silicon layer extending from a top surface of the silicon layer into the silicon layer,... Agent: International Business Machines Corporation

20120112279 - Contacts for fet devices: A method for contacting an FET device is disclosed. The method includes vertically recessing the device isolation, which exposes a sidewall surface on both the source and the drain. Next, silicidation is performed, resulting in a silicide layer covering both the top surface and the sidewall surface of the source... Agent: International Business Machines Corporation

20120112281 - Fabrication of semiconductors with high-k/metal gate electrodes: Semiconductor devices with high-K/metal gates are formed with spacers that are substantially resistant to subsequent etching to remove an overlying spacer, thereby avoiding replacement and increasing manufacturing throughput. Embodiments include forming a high-K/metal gate, having an upper surface and side surfaces, over a substrate, e.g., a SOI substrate, and sequentially... Agent: Globalfoundries Inc.

20120112282 - Germanium field effect transistors and fabrication thereof: Germanium field effect transistors and methods of fabricating them are described. In one embodiment, the method includes forming a germanium oxide layer over a substrate and forming a metal oxide layer over the germanium oxide layer. The germanium oxide layer and the metal oxide layer are converted into a first... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20120112283 - Esd protection devices for soi integrated circuit and manufacturing method thereof: The present invention discloses an ESD protection structure in a SOI CMOS circuitry. The ESD protection structure includes a variety of longitudinal (vertical) PN junction structures having significantly enlarged junction areas for current flow. The resulting devices achieve increased heavy current release capability. Processes of fabricating varieties of the ESD... Agent: Shanghai Institute Of Microsystem And Information Technology, Chinese Academy

20120112285 - Soi cmos circuits with substrate bias: The present invention relates to methods and devices for reducing the threshold voltage difference between an n-type field effect transistor (n-FET) and a p-type field effect transistor (p-FET) in a complementary metal-oxide-semiconductor (CMOS) circuit located on a silicon-on-insulator (SOI) substrate. Specifically, a substrate bias voltage is applied to the CMOS... Agent: International Business Machines Corporation

20120112284 - Strained semiconductor devices and methods of fabricating strained semiconductor devices: A structure and method of fabricating the structure. The structure includes a first region of a semiconductor substrate separated from a second region of the semiconductor substrate by trench isolation formed in the substrate; a first stressed layer over the first region; a second stressed layer over second region; the... Agent: International Business Machines Corporation

20120112286 - Esd protection using diode-isolated gate-grounded nmos with diode string: An ESD protection circuit with a diode string coupled to a diode-isolated, gate-grounded NMOS ESD device. A method of forming an ESD protection circuit with a diode string coupled to a diode-isolated, gate-grounded NMOS ESD device.... Agent: Texas Instruments Incorporated

20120112287 - Gate-to-gate recessed strap and methods of manufacture of same: A structure and methods of making the structure. The structure includes: first and a second semiconductor regions in a semiconductor substrate and separated by a region of trench isolation in the substrate; a first gate electrode extending over the first semiconductor region and the region of the trench isolation; a... Agent: International Business Machines Corporation

20120112288 - Isolation structure, method for manufacturing the same, and semiconductor device having the structure: The present invention provides an isolation structure for a semiconductor substrate and a method for manufacturing the same, as well as a semiconductor device having the structure. The present invention relates to the field of semiconductor manufacture. The isolation structure comprises: a trench embedded in a semiconductor substrate; an oxide... Agent: Institute Of Microelectronics, Chinese Academy Of Sciences

20120112290 - Controlled contact formation process: A structure and method for replacement metal gate (RMG) field effect transistors is disclosed. Silicide regions are formed on a raised source-drain (RSD) structure. The silicide regions form a chemical mechanical polish (CMP) stopping layer during a CMP process used to expose the gates prior to replacement. Protective layers are... Agent: International Business Machines Corporation

20120112291 - Semiconductor apparatus and manufacturing method thereof: A semiconductor apparatus according to the present invention has a P-type well and an N-type well, with impurity concentration of a high impurity concentration region deeper than the P-type well and the N-type well being from 1×1017 cm−3 to 1×1019 cm−3, and the apparatus comprises a first channel separating section... Agent: Sharp Kabushiki Kaisha

20120112289 - Semiconductor structure with multi-layer contact etch stop layer structure: A semiconductor device structure includes a substrate having a transistor thereon; a multi-layer contact etching stop layer (CESL) structure covering the transistor, the multi-layer CESL structure comprising a first CESL and a second CESL; and a dielectric layer on the second CESL. The first CESL is made of a material... Agent:

20120112292 - Intermixed silicide for reduction of external resistance in integrated circuit devices: A method for forming an alternate conductive path in semiconductor devices includes forming a silicided contact in a source/drain region adjacent to an extension diffusion region and removing sidewall spacers from a gate structure. A metal layer is formed over a portion of the extension diffusion region in a substrate... Agent: International Business Machines Corporation

20120112293 - Sealed cavity and method for producing such a sealed cavity: A method for producing a sealed cavity, including: a) producing a sacrificial layer on a substrate; b) producing a cover layer covering at least the sacrificial layer and a portion of the face of the substrate not covered by the sacrificial layer, the cover layer including lateral flanks forming, with... Agent: Commissariat A L'energie Atomique Et Aux Ene Alt

20120112294 - Ic manufacturing method, ic and apparatus: A method of manufacturing an integrated circuit having a substrate comprising a plurality of components and a metallization stack over the components, the metallization stack comprising a first sensing element and a second sensing element adjacent to the first sensing element.... Agent: Nxp B.v.

20120112299 - Ferromagnetic tunnel junction structure and magnetoresistive element using the same: For the present ferromagnetic tunnel junction structure, employed is a means characterized by using an MgO barrier and using a Co2FeAl full-Heusler alloy for any of the ferromagnetic layers therein. The ferromagnetic tunnel junction structure is characterized in that Co2FeAl includes especially a B2 structure and one of the ferromagnetic... Agent: National Institute For Materials Science

20120112298 - Magnetic memory devices: A magnetic memory device includes a magnetic pattern, a reference pattern, a tunnel barrier pattern interposed between the magnetic pattern and the reference pattern, and at least one magnetic segment disposed inside the magnetic pattern. The magnetic segment(s) is/are of magnetic material whose direction of magnetization has at least a... Agent: Samsung Electronics Co., Ltd.

20120112297 - Magnetic random access memory and method of fabricating the same: According to one embodiment, a magnetic random access memory including a magneto resistive element, including a free layer including first metal atoms, a first metal layer on the free layer and including a first metal, a first interfacial magnetic layer on the first metal layer, a nonmagnetic layer provided on... Agent: Kabushiki Kaisha Toshiba

20120112295 - Method and system for providing hybrid magnetic tunneling junction elements with improved switching: A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer has an easy... Agent: Grandis, Inc.

20120112296 - Semiconductor inductor with a serpentine shaped conductive wire and a serpentine shaped ferromagnetic core and a method of forming the semiconductor inductor: The inductance of an inductor is increased by forming a conductive wire to have a serpentine shape that weaves through a ferromagnetic core that has a number of segments that are connected together in a serpentine shape where each segment of the ferromagnetic core also has a number of sections... Agent:

20120112300 - Method of forming silicide for contact plugs: A metal layer structure includes a substrate, a metal layer and a composite passivation. The metal layer is disposed in the substrate. The composite passivation includes a first material layer covering the substrate, an opening disposed in the first material layer and exposing the metal layer as well as a... Agent:

20120112301 - Rear-face illuminated solid state image sensors: A microelectronic unit includes a semiconductor element having a front surface to which a packaging layer is attached, and a rear surface remote from the front surface. The element includes a light detector including a plurality of light detector element arranged in an array disposed adjacent to the front surface... Agent: Tessera North America, Inc.

20120112302 - Novel integration process to improve focus leveling within a lot process variation: A method of improving the focus leveling response of a semiconductor wafer is described. The method includes combining organic and inorganic or metallic near infrared (NIR) hardmask on a semiconductor substrate; forming an anti-reflective coating (ARC) layer on the combined organic NIR-absorption and the inorganic or metallic NIR-absorption hardmask; and... Agent: International Business Machines Corporation

20120112304 - Image sensor: An image sensor including a substrate, a deep well layer, multiple first sensing units, second sensing units and third sensing units is provided. The first, the second and the third sensing units are located between a first surface and the deep well layer. A ratio between an area of a... Agent: Novatek Microelectronics Corp.

20120112305 - Semiconductor-metal coil units and electrical apparatus comprising same: Coil units are disclosed for use in electrical circuits. An exemplary coil unit comprises a rigid substrate having an electrically non-conductive three-dimensional (3-D) surface. At least one 3-D coil (shaped, for example, as a helical coil) of semiconductor material is formed on the substrate surface. Disposed on the at least... Agent: Levitronics, Inc.

20120112306 - Semiconductor device with superjunction structure: A superjunction semiconductor device is disclosed which has, in the active section, a first alternating-conductivity-type layer which makes a current flow in the ON-state of the device and sustains a bias voltage in the OFF-state of the device. There is a second alternating-conductivity-type layer in a edge-termination section surrounding the... Agent: Fuji Electric Co., Ltd.

20120112307 - Bipolar transistor with guard region: A bipolar transistor comprising an emitter region, a base region and a collector region, and a guard region spaced from and surrounding the base. The guard region can be formed in the same steps that form the base, and can serve to spread out the depletion layer in operation.... Agent: Analog Devices, Inc.

20120112308 - Semiconductor device, semiconductor group member and semiconductor device manufacturing method: According to one embodiment, a semiconductor device includes a device portion, a first electrode portion, a second electrode portion and a protruding portion. The device portion is provided on a substrate. The first electrode portion is provided on the device portion and is electrically contacted with the device portion. The... Agent: Kabushiki Kaisha Toshiba

20120112310 - Diffusion sidewall for a semiconductor structure: A method of forming diffusion sidewalls in a semiconductor structure and a semiconductor structure having diffusion sidewalls includes etching a trench into a semiconductor substrate to form first and second active regions, lining each trench with an oxide liner along exposed sidewalls of an active silicon region (RX) of the... Agent: International Business Machines Corporation

20120112309 - Low cost fabrication of double box back gate silicon-on-insulator wafers with subsequent self aligned shallow trench isolation: A semiconductor substrate structure for manufacturing integrated circuit devices includes a bulk substrate; a lower insulating layer formed on the bulk substrate, the lower insulating layer formed from a pair of separate insulation layers having a bonding interface therebetween; an electrically conductive layer formed on the lower insulating layer; an... Agent: International Business Machines Corporation

20120112311 - Electrical fuses using junction breakdown and semiconductor integrated circuits including the same: An electrical fuse includes first and second active regions doped with respective first-type and second-type impurities that form a horizontal P/N junction, first and second spaced apart silicide layers on respective portions of the top surfaces of the first and second active regions, and first and second contacts on the... Agent: Samsung Electronics Co., Ltd.

20120112313 - Anti-fuse element: An anti-fuse element that includes an insulation layer; a pair of electrode layers on the upper and lower surfaces of the insulation layer; and an extraction electrode formed so as to make contact with a section of the electrode layers that form electrostatic capacitance with the insulation layer. The anti-fuse... Agent: Murata Manufacturing Co., Ltd.

20120112312 - Integrated circuit chip customization using backside access: An integrated circuit, a method for making an integrated circuit product, and methods for customizing an integrated circuit are disclosed. Integrated circuit elements including programmable elements, such as fuses, PROMs, RRAMs, MRAMs, or the like, are formed on the frontside of a substrate. Vias are formed through the substrate from... Agent: Qualcomm Incorporated

20120112317 - Integrated circuit capacitors having sidewall supports: In a method of forming a capacitor, a first mold layer pattern including a first insulating material may be formed on a substrate. The first mold layer pattern may have a trench. A supporting layer including a second insulating material may be formed in the trench. The second insulating material... Agent:

20120112314 - Low cost metal-insulator-metal capacitors: A device includes a top metal layer over a substrate; a copper-containing metal feature in the top metal layer; a passivation layer over the top metal layer; and a capacitor. The capacitor includes a bottom electrode including at least a portion in the first passivation layer, wherein the bottom electrode... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120112315 - Method and system for manufacturing copper-based capacitor: Embodiments of the present invention provide a method and system for manufacturing copper-based capacitor on an integrated circuit. For example, the integrated circuit is associated with a channel length of less than 0.13 um. It is to be appreciated that, depending upon application, the present invention provides a more improved... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20120112316 - Semiconductor device and fabricating method of the same: Openings are formed by lithography and subsequent dry etching at the portions of a first protective film which correspond to connecting holes of second plugs which will be described later, namely at the portions thereof which align with first plugs, wherein the openings have a diameter greater than that of... Agent: Fujitsu Semiconductor Limited

20120112318 - Transistor and process of producing the same, light-emitting device, and display: A transistor capable of modulating, at low voltages, a large current flowing between an emitter electrode and a collector electrode. A process of producing the transistor, a light-emitting device comprising the transistor, and a display comprising the transistor. The transistor comprises an emitter electrode and a collector electrode. Between the... Agent: Sumitomo Chemical Company Ltd.

20120112319 - Epitaxial silicon wafer and method for manufacturing same: It is an object to provide an epitaxial silicon wafer that is provided with an excellent gettering ability in which a polysilicon layer is formed on the rear face side of a silicon crystal substrate into which phosphorus (P) and germanium (Ge) have been doped. A PBS forming step for... Agent: Sumco Corporation

20120112320 - Nitride semiconductor crystal and production process thereof: A production process for a nitride semiconductor crystal, comprising growing a semiconductor layer on a seed substrate to obtain a nitride semiconductor crystal, wherein the seed substrate comprises a plurality of seed substrates made of the same material, at least one of the plurality of seed substrates differs in the... Agent: Mitsubishi Chemical Corporation

20120112321 - Alkaline etching liquid for texturing a silicon wafer surface: An etching liquid for texturing a silicon wafer surface is provided. The etching liquid may include an aqueous solution of at least one alkaline etching agent and at least one polysaccharide or derivative thereof. Also provided is a process for texture etching a silicon wafer using the etching liquid of... Agent: Solarworld Industries America, Inc.

20120112323 - Apparatus and method for controlled particle beam manufacturing: A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to... Agent: Nexgen Semi Holding, Inc.

20120112322 - Seal ring in an integrated circuit die: The formation of a seal ring in a semiconductor integrated circuit (IC) die is described. Through-silicon vias (TSVs) are typically formed in a semiconductor IC die to facilitate the formation of a three dimensional (3D) stacking die structure. The TSVs may be utilized to provide electrical connections between components in... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20120112324 - Through-wafer interconnection: A through-wafer interconnect and a method for fabricating the same are disclosed. The method starts with a conductive wafer to form a patterned trench by removing material of the conductive wafer. The patterned trench extends in depth from the front side to the backside of the wafer, and has an... Agent: Kolo Technologies, Inc.

20120112325 - Integrated circuit device, system, and method of fabrication: A semiconductor device (10), comprising a first semiconductor portion (32) having a first end (34), a second end (36), and a slit portion (30), wherein the width of the slit portion (30) is less than the width of at least one of the first end (34) and the second end... Agent: Carnegie Mellon University

20120112326 - Semiconductor device and method of forming prefabricated emi shielding frame with cavities containing penetrable material over semiconductor die: A semiconductor device has a plurality of semiconductor die mounted to a temporary carrier. A prefabricated shielding frame has a plate and integrated bodies extending from the plate. The bodies define a plurality of cavities in the shielding frame. A penetrable material is deposited in the cavities of the shielding... Agent: Stats Chippac, Ltd.

20120112327 - Semiconductor device and method of forming prefabricated emi shielding frame with cavities containing penetrable material over semiconductor die: A semiconductor device has a plurality of semiconductor die mounted to a temporary carrier. A prefabricated shielding frame has a plate and integrated bodies extending from the plate. The bodies define a plurality of cavities in the shielding frame. A penetrable material is deposited in the cavities of the shielding... Agent: Stats Chippac, Ltd.

20120112328 - Semiconductor device and method of mounting pre-fabricated shielding frame over semiconductor die: A semiconductor device includes a pre-fabricated shielding frame mounted over a sacrificial substrate and semiconductor die. An encapsulant is deposited through an opening in the shielding frame around the semiconductor die. A first portion of the shielding frame to expose the encapsulant. Removing the first portion also leaves a second... Agent: Stats Chippac, Ltd.

20120112329 - Chip package: An embodiment of the invention provides a chip package, which includes: a semiconductor substrate having a device region and a non-device region neighboring the device region; a package layer disposed on the semiconductor substrate; a spacing layer disposed between the semiconductor substrate and the package layer and surrounding the device... Agent:

20120112330 - Semiconductor device: A semiconductor device, such as a semiconductor device of chip on film package, is provided. The semiconductor device includes at least an integrated circuit formed on a film base, each integrated circuit includes a chip and a plurality of leads formed interior to a boundary of a predetermined range, each... Agent: Raydium Semiconductor Corporation

20120112331 - Dual lead frame semiconductor package and method of manufacture: A semiconductor package and a method for making the same are provided. In the method, a clip is used to conduct a lead frame and at least one chip. The clip has at least one second connection segment, at least one third connection segment, and at least one intermediate connection... Agent: Siliconix Electronic Co., Ltd.

20120112332 - Resin-sealed semiconductor device and method for fabricating the same: A resin-sealed semiconductor device includes a power element (1), a control element (4), a first lead frame (3) having a first die pad (3A) which holds the power element (1), a second lead frame (5) having a second die pad (5A) which holds the control element (4), and a housing... Agent:

20120112333 - Semiconductor device with nested rows of contacts: A molded surface mount semiconductor device has electrical contact elements disposed in a set of pairs of zigzag rows extending adjacent and generally parallel to opposite edges of an active face of a semiconductor die. Each of the pairs of rows includes an inner zigzag row of electrical contact elements... Agent: Freescale Semiconductor, Inc

20120112334 - Packaging structure of a micro-device including a getter material: A packaging structure including at least one cavity wherein at least one micro-device is provided, the cavity being bounded by at least a first substrate and at least a second substrate integral with the first substrate through at least one bonding interface consisting of at least one metal or dielectric... Agent: Commissariat A L'energie Atomique Et Aux Ene Alt

20120112335 - Novel bonding process and bonded structures: A sealing and bonding material structure for joining semiconductor wafers having monolithically integrated components. The sealing and bonding material are provided in strips forming closed loops. There are provided at least two concentric sealing strips on one wafer. The strips are laid out so as to surround the component(s) on... Agent: Silex Microsystems Ab

20120112336 - Encapsulated die, microelectronic package containing same, and method of manufacturing said microelectronic package: An encapsulated die (100, 401) comprises a substrate (110, 510) having a first surface (111), an opposing second surface (112), and intervening side surfaces (113), with active devices located at the first surface of the substrate. The active devices are connected by a plurality of electrically conductive layers (120, 520)... Agent:

20120112338 - Heat dissipating semiconductor device packages and related methods: An embodiment of a method for making semiconductor device packages includes a heat sink matrix and a substrate. A plurality of semiconductor devices are attached to the substrate. Then, a package body is formed between the heat sink matrix and the substrate, wherein the package body encapsulates the semiconductor devices.... Agent:

20120112337 - Optoelectronic component, and method for the production of an optoelectronic component: An optoelectronic component (1) is provided, having at least two connecters (2) for electrical contacting of the component (1), a housing body (3), in which the connecters (2) are embedded in places, a heat sink (4), which is connected to at least one connecter (2), wherein the housing body (3)... Agent: Osram Opto Semiconductors Gmbh

20120112341 - Method and device for selectively adding timing margin in an integrated circuit: A method, system, and integrated circuit including selectively added timing margin. The method, for integrating statistical timing and automatic test pattern generation (ATPG) to selectively add timing margin in an integrated circuit, includes identifying, while a chip is in design, paths that are unable to be robustly tested “at speed”... Agent: International Business Machines Corporation

20120112339 - Semiconductor device: A semiconductor device and a method of forming the same are disclosed, which forms a low-dielectric-constant oxide film only at a peripheral part of a bit line conductive material, resulting in reduction in parasitic capacitance of the bit line. The semiconductor device includes a bit line formed over a semiconductor... Agent: Hynix Semiconductor Inc.

20120112340 - Semiconductor device and method of forming insulating layer disposed over the semiconductor die for stress relief: A semiconductor device has a semiconductor die and conductive layer formed over a surface of the semiconductor die. A first channel can be formed in the semiconductor die. An encapsulant is deposited over the semiconductor die. A second channel can be formed in the encapsulant. A first insulating layer is... Agent: Stats Chippac, Ltd.

20120112343 - Electroplated posts with reduced topography and stress: Bond pads on an integrated circuit are provided with planarizing dielectric structures to permit the electroplating of metal posts having planar top surfaces. The metal posts contact at least three sides of the planarizing dielectric structures. The planarizing dielectric structures can be used on integrated circuits having bond pads of... Agent: Texas Instruments Incorporated

20120112342 - Semiconductor device and stacked semiconductor package: A semiconductor device includes a first structural body having a first surface and a second surface which faces away from the first surface, and formed with first electrode pads on the first surface, a stress buffer layer formed on the first electrode pads and the first surface of the first... Agent: Hynix Semiconductor Inc.

20120112344 - Substrate for semiconductor package and method of manufacturing thereof: Disclosed is a substrate for a semiconductor package in which leakage of radiation noise from a gap between a semiconductor element and a mounting substrate can be prevented. The substrate for the semiconductor package includes a coplanar waveguide including a signal and ground electrodes on the mounting substrate, the signal... Agent: Nec Corporation

20120112345 - High bandwidth semiconductor ball grid array package: A high bandwidth semiconductor printed circuit board assembly (PCBA) providing a layer of dielectric substrate containing plated vias with an upper and lower surface plated with etched copper, mated with a second layer of etched copper plated dielectric containing plated vias that is placed on the top surface of the... Agent: Endicott Interconnect Technologies, Inc.

20120112346 - Thin-film transistor substrate and method of manufacturing the same: Provided are a thin-film transistor (TFT) substrate and a method of manufacturing the same. The method includes: forming a passivation film by forming an insulating film on a substrate; forming a photoresist pattern by forming a photoresist film on the passivation film, exposing the photoresist film to light, and developing... Agent:

20120112347 - Flexible electronic devices and related methods: A packaged electronic device includes a flexible circuit structure and a die. The flexible circuit structure includes a first structural layer and electrical conductors. The die is bonded to the flexible circuit structure by a flexible attachment layer. The die includes interconnects in electrical contact with die circuitry and extending... Agent:

20120112348 - Devices, methods, and systems for wafer bonding: Devices, methods, and systems for wafer bonding are described herein. One or more embodiments include forming a bond between a first wafer and a second wafer using a first material adjacent the first wafer and a second material adjacent the second wafer. The first material includes a layer of gold... Agent: Honeywell International Inc.

20120112349 - Semiconductor device: A semiconductor device is disclosed, which reduces the depth of a metal contact so that an etching margin is increased in forming a contact hole. In addition, the semiconductor device and the method for forming the same increase a contact area between a plate electrode and a metal contact so... Agent: Hynix Semiconductor Inc.

20120112350 - Semiconductor structure and method for making same: Embodiments relate to a method for making a semiconductor structure, the method comprising: forming a seed layer in direct contact with a dielectric material; forming a masking layer over the seed layer; patterning the masking layer to expose the seed layer; forming a fill layer over the exposed seed layer;... Agent:

20120112351 - Semiconductor device packaging method and semiconductor device package: Disclosed is a method of manufacturing a discrete semiconductor device package (100), comprising providing a wafer comprising a plurality of semiconductor devices (50), each of said semiconductor devices comprising a substrate (110) having a top contact (130) and a bottom contact (150); partially sawing said wafer with a first sawing... Agent: Nxp B.v.

20120112352 - Integrated circuit system with distributed power supply: An integrated circuit system having an interposer and an integrated circuit with first and second bond pads, the integrated circuit die bonded to the interposer using the first bond pads. The integrated circuit having circuit blocks, that operate at different operating voltages and voltage regulator modules die bonded to the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120112353 - Organic electronic circuit: A multi-layer film body comprises a plastic substrate strip conveyed in a first direction in a roll-to-roll process for printing electronic organic components on the substrate. A first electrically conducting layer is on the substrate, a semiconductor layer is on the first layer, an insulator layer is on the semiconductor... Agent: Polyic Gmbh & Co. Kg

20120112354 - Semiconductor device: A semiconductor device includes a first interconnect layer and a second interconnect layer provided above or under the first interconnect layer. The first interconnect layer includes a plurality of first interconnect blocks, and in each of the first interconnect blocks, a first interconnect has a first potential, and extends in... Agent: Panasonic Corporation

20120112355 - Semiconductor device and method of forming stepped interconnect layer for stacked semiconductor die: A semiconductor die has a first semiconductor die mounted to a carrier. A plurality of conductive pillars is formed over the carrier around the first die. An encapsulant is deposited over the first die and conductive pillars. A first stepped interconnect layer is formed over a first surface of the... Agent: Stats Chippac, Ltd.

20120112363 - Chip structure having redistribution layer: A chip structure having a redistribution layer includes: a chip with electrode pads disposed on an active surface thereof; a first passivation layer formed on the active surface and the electrode pads; a redistribution layer formed on the first passivation layer and having a plurality of wiring units, wherein each... Agent: Siliconware Precision Industries Co., Ltd.

20120112360 - Semiconductor chip, stacked semiconductor package having the same, and method for manufacturing stacked semiconductor package: A semiconductor chip includes a semiconductor chip body including a peripheral region, a first region and a second region, and having a plurality of memory banks formed in each of the first region and the second region; a plurality of first through electrodes formed in the peripheral region; and a... Agent: Hynix Semiconductor Inc.

20120112362 - Semiconductor device and method of manufacturing the same: A semiconductor device includes a first line pattern and a second line pattern formed in parallel on a semiconductor substrate, third line patterns formed in parallel between the first line pattern and the second line pattern, fourth line patterns formed in parallel between the first line pattern and the second... Agent:

20120112359 - Semiconductor devices and fabrication methods thereof: A semiconductor device includes a first semiconductor chip, a first connection structure disposed on a first side of the first semiconductor chip, a second semiconductor chip disposed on a second side of the first semiconductor chip, and a second connection structure disposed between the first and second semiconductor chips, wherein... Agent:

20120112361 - Semiconductor devices and methods of manufacturing the same: A semiconductor device is provided. The semiconductor device includes a substrate having a via hole comprised of a first region having a first width and a second region having a second width greater than the first width, wherein at least a portion of the substrate is exposed in the via... Agent:

20120112358 - Stack-type semiconductor device and method for manufacturing the same: A stack-type semiconductor device includes a semiconductor substrate; and a plurality of wafer assemblies arranged in various levels on the semiconductor substrate, in which the wafer assembly in each level includes an active part and an interconnect part, and the active part and the interconnect part each have conductive through... Agent: Institute Of Microelectronics, Chinese Academy Of Sciences

20120112356 - System and method for relieving stress and improving heat management in a 3d chip stack: The present disclosure provides a system and method for relieving stress and providing improved heat management in a 3D chip stack of a multichip package. A stress relief apparatus is provided to allow the chip stack to adjust in response to pressure, thereby relieving stress applied to the chip stack.... Agent: Stmicroelectronics, Inc.

20120112357 - System and method for relieving stress and improving heat management in a 3d chip stack having an array of inter-stack connections: The present disclosure provides a system and method for relieving stress and providing improved heat management in a 3D chip stack of a multichip package. A stress relief apparatus is provided to allow the chip stack to adjust in response to pressure, thereby relieving stress applied to the chip stack.... Agent: Stmicroelectronics, Inc.

20120112364 - Wiring structure of semiconductor device: A wiring structure may include a first wiring having a first width that extends in a first direction, and a second wiring intersecting the first wiring, the second wiring extending in a second direction and having a second width that is equal to or less than the first width. Furthermore,... Agent: Samsung Electronics Co., Ltd.

20120112366 - Power electronic module: The invention relates to a power electronic module comprising a plurality of bridge arms mounted in parallel and a plurality of output terminals (BS) connected to the middle points of said bridge arms, characterized in that it comprises at least two semi-conductor chips (P1, P2), each of the chips including... Agent: Centre National De La Recherche Scientifique

20120112365 - Semiconductor packages and methods for producing the same: In one embodiment, a semiconductor package includes an isolating container having a recess, which forms an inner membrane portion and an outer rim portion. The rim portion is thicker than the membrane portion. The package includes a semiconductor chip disposed in the recess and a backplane disposed under the membrane... Agent: Infineon Technologies Ag

20120112367 - Chip card, and method for the production thereof: A chip card in the form of an ID-1 card, a plug-in SIM or a USB token has a layered compound (12) with two (4, 5) or three (4, 5, 9) layers extending over the complete chip card (1). An exterior foil layer (4) has on its outward facing front... Agent:

20120112368 - Mems sensor package: An MEMS sensor package includes an MEMS sensor and a driving IC that controls driving of the MEMS sensor, which are fixed onto the same mounting surface made of a given package material, wherein an MEMS sensor mounting area and a driving IC mounting area are set on the mounting... Agent: Alps Electric Co., Ltd.

20120112369 - Silicon structure having bonding pad: A silicon structure includes a silicon substrate having an electric element; a wiring conductor and a bonding pad, connecting the electric element and an external circuit; a protective layer disposed on the silicon substrate; and a pad opening pattern provided in the protective layer to exposed the bonding pad, wherein... Agent: Alps Electric Co., Ltd.

20120112370 - Template, method of forming template, and method of manufacturing semiconductor device: According to one embodiment, a template includes a pattern part which is provided on a substrate and corresponds to a pattern of a semiconductor device, the pattern of the semiconductor device being to be transferred to a wafer, and an alignment mark part which is provided on the substrate, used... Agent: