Active solid-state devices (e.g., transistors, solid-state diodes) patents - Monitor Patents
FreshPatents.com Logo    FreshPatents.com icons
Monitor Keywords Patent Organizer File a Provisional Patent Browse Inventors Browse Industry Browse Agents



USPTO Class 257  |  Browse by Industry: Previous - Next | All     monitor keywords
Recent  |  14: Jul | Jun | May | Apr | Mar | Feb | Jan | 13: Dec | Nov | Oct | Sep | Aug | Jul | Jun | May | Apr | Mar | Feb | Jan | 12: Dec | Nov | Oct | Sep | Aug | July | June | May | April | Mar | Feb | Jan | 11: Dec | Nov | Oct | Sep | Aug | Jul | Jun | May | Apr | Mar | Feb | Jan | 10: Dec | Nov | Oct | Sep | Aug | Jul | Jun | May | Apr | Mar | Feb | Jan |  | 09: Dec | Nov | Oct | Sep | Aug | Jl | Jn | May | Apr | Mar | Fb | Jn |  | 2008 | 2007 |

Active solid-state devices (e.g., transistors, solid-state diodes)

Below are recently published patent applications awaiting approval from the USPTO. Recent week's RSS XML file available below.
Listing for abstract view: USPTO application #, Title, Abstract excerpt,Patent Agent. Listing format for list view: USPTO National Class full category number, title of the patent application.
  
07/10/2014 > 244 patent applications in 94 patent subcategories.

20140191180 - Low temperature p+ polycrystalline silicon material for non-volatile memory device: A method of forming a non-volatile memory device. The method includes providing a substrate having a surface region and forming a first dielectric material overlying the surface region of the substrate. A first electrode structure is formed overlying the first dielectric material and a p+ polycrystalline silicon germanium material is... Agent: Crossbar, Inc.

20140191178 - Method of fabricating a vertical mos transistor: The disclosure relates to a method of fabricating a vertical MOS transistor, comprising the steps of: forming, above a semiconductor surface, a conductive layer in at least one dielectric layer; etching a hole through at least the conductive layer, the hole exposing an inner lateral edge of the conductive layer... Agent: Stmicroelectronics (rousset) Sas

20140191179 - Vertical bipolar transistor: The disclosure relates to an integrated circuit comprising a transistor comprising first and second conduction terminals and a control terminal. The integrated circuit further comprises a stack of a first dielectric layer, a conductive layer, and a second dielectric layer, the first conduction terminal comprising a first semiconductor region formed... Agent: Stmicroelectronics (rousset) Sas

20140191182 - Memory cells: Some embodiments include a method of forming a memory cell. A first portion of a switching region is formed over a first electrode. A second portion of the switching region is formed over the first portion using atomic layer deposition. The second portion is a different composition than the first... Agent: Micron Technology, Inc.

20140191181 - Method to make rf-pcm switches and circuits with phase-change materials: A radio frequency switch includes a first transmission line, a second transmission line, a first electrode electrically coupled to the first transmission line, a second electrode electrically coupled to the second transmission line, and a phase change material, the first transmission line coupled to a first area of the phase... Agent: Hrl Laboratories, LLC

20140191184 - Nonvolatile variable resistance device and method of manufacturing the nonvolatile variable resistance element: According to one embodiment, a nonvolatile variable resistance device includes a first electrode, a second electrode, a first layer, and a second layer. The second electrode includes a metal element. The first layer is arranged between the first electrode and the second electrode and includes a semiconductor element. The second... Agent: Kabushiki Kaisha Toshiba

20140191183 - Resistive random access memory: A resistive random access memory includes a first electrode, a second electrode and a first metal oxide composite layer. The second electrode is opposite to the first electrode. The first metal oxide composite layer is disposed between the first electrode and the second electrode. The first metal oxide composite layer... Agent: National Tsing Hua University

20140191185 - Apparatus and method for fabricating nano resonator using laser interference lithography: A method of fabricating a nano resonator, includes forming a line pattern in a first substrate, and transferring the line pattern to a second substrate including a gate electrode. The method further includes forming a source electrode and a drain electrode on the transferred line pattern.... Agent: Samsung Electronics Co., Ltd.

20140191186 - Regenerative nanosensor devices: The present invention provides a regenerative nanosensor device for the detection of one or more analytes of interest. In certain embodiments, the device comprises a nanostructure having a reversible functionalized coating comprising a supramolecular assembly. Controllable and selective disruption of the assembly promotes desorption of at least part of the... Agent: Yale University

20140191191 - Light emitting devices with textured active layer: A device includes a textured substrate having a trench extending from a top surface of the textured substrate into the textured substrate, wherein the trench comprises a sidewall and a bottom. A light-emitting device (LED) includes an active layer over the textured substrate. The active layer has a first portion... Agent:

20140191194 - Nitride semiconductor light-emitting element: There is provided a nitride semiconductor light emitting device, capable of improving light extraction efficiency through a texture effect and including: a light emitting structure formed on a substrate and including a first conductivity-type nitride semiconductor layer and a second conductivity-type nitride semiconductor layer with an active layer interposed therebetween;... Agent: Samsung Electronics Co., Ltd.

20140191193 - Nitride semiconductor light-emitting element having superior current spreading effect and method for manufacturing same: Disclosed are a nitride semiconductor light-emitting element having a superior current spreading effect as a result of using a current spreading part containing current spreading impurities, and a method for manufacturing same. The nitride semiconductor light-emitting element according to the present invention comprises: an n-type nitride layer; a current spreading... Agent: Iljin Led Co., Ltd.

20140191190 - Semiconductor light emitting device and method for manufacturing the same: A semiconductor light emitting device includes a first nitride semiconductor layer, a dopant doped semiconductor layer on the first nitride semiconductor layer, an active layer on the dopant doped semiconductor layer, a delta doped layer on the active layer, a superlattice structure on the delta doped layer, an undoped layer... Agent: Lg Innotek Co., Ltd.

20140191192 - Semiconductor light-emitting device: There is provided a semiconductor light emitting device having improved light emitting efficiency by increasing an inflow of holes into an active layer while preventing an overflow of electrons. The semiconductor light emitting device includes an n-type semiconductor layer; an active layer formed on the n-type semiconductor layer and including... Agent: Samsung Electronics Co., Ltd.

20140191189 - Staggered composition quantum well method and device: A light emitting device comprising a staggered composition quantum well (QW) has a step-function-like profile in the QW, which provides higher radiative efficiency and optical gain by providing improved electron-hole wavefunction overlap. The staggered QW includes adjacent layers having distinctly different compositions. The staggered QW has adjacent layers Xn, wherein... Agent: Lehigh University

20140191187 - Submicro-facet light-emitting device and method for fabricating the same: A light emitting device comprises an n-type layer, a p-type layer, and an active region sandwiched between the n-type layer and the p-type layer, wherein the active-region has a wavy structure with nano or micro fluctuations in its thickness direction. The n-type layer comprises crystal facets on its upper surface,... Agent: Invenlux Limited

20140191188 - Terahertz modulator: According to one aspect, the present invention concerns a terahertz modulator (1) intended to be used in a given frequency band of use. The modulator comprises a semi-conductor polar crystal (330) presenting a Reststrahlen band overlapping said frequency band of use and presenting at least one interface with a dielectric... Agent: Centre National De La Recherche Scientifique-cnrs

20140191195 - Focal plane array with pixels defined by modulation of surface fermi energy: Pixels in a focal plane array are defined by controlled variation of the Fermi energy at the surface of the detector array. Varying the chemical composition of the semiconductor at the detector surface produces a corresponding variation in the surface Fermi energy which produces a corresponding variation in the electric... Agent:

20140191196 - Optical device including three coupled quantum well structure: Provided is an optical device which includes an active layer which includes at least two outer barriers and at least one coupled quantum well, each of the at least one coupled quantum well is sandwiched between the at least two outer barriers. Each of the at least one coupled quantum... Agent: Samsung Electronics Co., Ltd.

20140191197 - Amorphous multi-component metallic thin films for electronic devices: An electronic structure comprising: (a) a first metal layer; (b) a second metal layer; (c) and at least one insulator layer located between the first metal layer and the second metal layer, wherein at least one of the metal layers comprises an amorphous multi-component metallic film. In certain embodiments, the... Agent: The State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Orego

20140191198 - Graphene electronic devices and methods of manufacturing the same: A graphene electronic device includes: a first conductive layer and a semiconductor layer on a first region of an intermediate layer; a second conductive layer on a second region of the intermediate layer; a graphene layer on the intermediate layer, the semiconductor layer, and the second conductive layer; and a... Agent: Samsung Electronics Co., Ltd.

20140191199 - Nanoscale qca-based logic gates in graphene technology: g

20140191200 - Apparatus and method for making oled lighting device: An apparatus for depositing one or more organic material layers of an OLED lighting device upon a first region of a substrate and one or more conducting layers upon a second region, wherein the conducting layers partially or completely cover and extend beyond one side of the organic layers, comprising:... Agent: Oledworks LLC

20140191201 - Apparatus and method for making oled lighting device: An apparatus for depositing one or more organic material layers of an OLED lighting device upon a first region of a substrate and one or more conducting layers upon a second region, wherein the conducting layers partially or completely cover and extend beyond one side of the organic layers, comprising:... Agent: Oledworks LLC

20140191205 - Bipolar compound and organic electroluminescent device employing the same: Ra, Rb, and Rc are independently selected from a group consisting of a hydrogen, a halo, a cyano, a trifluoromethyl, an amino, a C1-C10 alkyl, a C2-C10 alkenyl, a C2-C10 alkynyl, a C3-C20 cycloalkyl, a C3-C20 cycloalkenyl, a C1-C20 heterocyclic alkyl, a C1-C20 hetercyclic alkenyl, an aryl, and a heteroaryl... Agent:

20140191225 - Biscarbazole derivative and organic electroluminescence element using same: A biscarbazole derivative is represented by the following formula (1). A1 and A2 of the following formula (1) represent an aromatic hydrocarbon group having 6 to 30 ring carbon atoms or an aromatic heterocyclic group having 1 to 30 ring carbon atoms. However, at least one of A1 and A2... Agent: Idemitsu Kosan Co., Ltd.

20140191208 - Carbazole-based compound and organic light emitting diode including the same: A carbazole-based compound is represented by Formula 1 and may be used in the organic layer of an organic light-emitting diode. An organic light-emitting diode includes a first electrode, a second electrode, and an organic layer between the first and second electrodes. The organic layer includes an emission layer, and... Agent: Samsung Display Co., Ltd.

20140191213 - Dye dispersion liquid, photosensitive resin composition for color filters, color filter, liquid crystal display device and organic light emitting display device: An object is to provide a photosensitive resin composition for color filters, configured to be able to form a high-luminance color layer with excellent heat resistance and light resistance. Disclosed is a photosensitive resin composition for color filters including the dye dispersion liquid, the dye dispersion liquid including a dye... Agent: Dai Nippon Printing Co., Ltd.

20140191211 - Electrode substrate and planar optoelectronic device: Electrode substrate for an optoelectronic device having a fabric (10) that includes electrically conductive (14; 56) as well as non-conductive (12; 50) and transparent fibres wherein the fabric is furnished over a wide area with a transparent, electrically conductive coating (26, 28, 58) in such manner that projecting or exposed... Agent: Sefar Ag

20140191214 - Fluorene-based compound and organic light-emitting device including the same: e

20140191223 - Glass for scattering layer of organic led element, laminated substrate for organic led element and method of manufacturing the same, and organic led element and method of manufacturing the same: Glass for a scattering layer of an organic LED includes, as represented by mol percentage based on the following oxides, 26% to 43% of B2O3, 30% to 37% of ZnO, 17% to 23% of Bi2O3, 2% to 21% of SiO2, and 0 to 2% of P2O5, and a total amount... Agent: Asahi Glass Company, Limited

20140191220 - Light-emitting element, light-emitting device, electronic device, and lighting device: A light-emitting element of the present invention can have sufficiently high emission efficiency with a structure including a host material being able to remain chemically stable even if a phosphorescent compound having higher emission energy is used as a guest material. The relation between the relative emission intensity and the... Agent: Semiconductor Energy Laboratory Co., Ltd.

20140191202 - Oled micro-cavity structure and method of making: An organic light emitting diode, including: a substrate; a first cavity electrode in a first micro-cavity region of the substrate; a first transparent electrode of a first thickness in the first micro-cavity region, the first transparent electrode overlaps beyond a first side of the first cavity electrode; a first emissive... Agent: Lg Display Co., Ltd.

20140191215 - Organic el display device: An organic EL display device ensures brightness and improves a contrast ratio by a reduction in external light reflection. The organic EL display device includes a wavelength selective absorption filter that absorbs a light in a given absorption spectrum uniform in a display region. An absorption spectrum has a negative... Agent: Japan Display Inc.

20140191216 - Organic el display device: An organic EL display device includes a first substrate, a plurality of organic EL devices arranged on the first substrate, a second substrate arranged above the first substrate, and a filling layer arranged between the first substrate and the second substrate, and displays an image on the second-substrate side. The... Agent: Japan Display Inc.

20140191227 - Organic electroluminescence element: An organic electroluminescent element includes a light-emitting layer between an anode and a cathode. The light-emitting layer contains a phosphorescent light-emitting organic metal complex and at least one host compound. The difference in relative dielectric constant between the host compound and the phosphorescent light-emitting organic metal complex is 0 to... Agent: Konica Minolta, Inc.

20140191217 - Organic electroluminescent display device: An organic electroluminescent display device includes an organic light emitting structure, a back light module, and a light control structure. The organic light emitting structure includes a first electrode, a second electrode, an organic light emitting layer, and a photo current sensitive layer. The back light module is disposed correspondingly... Agent: Wintek Corporation

20140191226 - Organic electroluminescent element: An organic electroluminescent element having a structure in which a plurality of light-emitting layers stacked between a first electrode with light reflectivity and a second electrode with optical transparency while one or more interlayers with a light transmissive property are interposed between the plurality of light-emitting layers. A first interlayer... Agent: Panasonic Corporation

20140191219 - Organic light emitting diode display and manufacturing method thereof: An organic light emitting diode (OLED) display includes: pixel electrodes formed on a substrate; a pixel definition layer between the pixel electrodes and partitioning a pixel area; organic emission layers of a plurality of colors on the pixel electrodes; and a common electrode on the organic emission layers. The pixel... Agent: Samsung Display Co., Ltd.

20140191209 - Organic light-emitting device and of preparing the same: An organic light emitting diode (OLED) and a method of manufacturing the same. An auxiliary layer comprising a high density metallic compound and an emission layer are formed by a laser induced thermal imaging (LITI) process. The LITI process reduces manufacturing costs and time by eliminating the need for a... Agent:

20140191206 - Organic light-emitting device having improved efficiency characteristics and organic light-emitting display apparatus including the same: An organic light-emitting device includes: a first electrode, a second electrode facing the first electrode, a phosphorescent emission layer between the first electrode and the second electrode, an electron transportation layer between the phosphorescent emission layer and the second electrode, an electron control layer between the phosphorescent emission layer and... Agent:

20140191210 - Organic light-emitting diode device: An organic light-emitting diode device includes a substrate, a patterned anode layer, an organic semiconductor layer and a cathode layer. The patterned anode layer is disposed on the substrate. The organic semiconductor layer is disposed to cover an upper surface and sidewalls of the patterned anode layer and the substrate,... Agent: Ultimate Image Corporation

20140191203 - Organic light-emitting display apparatus and method of manufacturing the same: Provided is an organic light-emitting display apparatus that includes a display substrate; a plurality of organic light-emitting devices (OLEDs) that are disposed on the display substrate and are separated by a pixel defining layer; an encapsulation substrate that is disposed facing the display substrate and covers the OLEDs; and a... Agent: Samsung Display Co., Ltd.

20140191204 - Organic light-emitting display apparatus and method of manufacturing thereof: An organic light-emitting display apparatus includes: a display substrate; a plurality of organic light-emitting diodes (OLEDs) on the display substrate, the OLEDs being divided from one another by a pixel defining layer (PDL); an encapsulation substrate on the display substrate and covering the OLEDs; a filling material on the PDL... Agent: Samsung Display Co., Ltd.

20140191224 - Organic transistor and method for manufacturing same: An organic transistor is provided with: an insulating substrate; a pair of insulating pedestals (2, 3) that are arranged spaced apart from each other on the substrate and that form respectively raised flat surfaces; a source electrode (4) provided on the raised flat surface formed on one of the pedestals;... Agent: Osaka University

20140191221 - Piezoelectric pressure sensor:

20140191222 - Resin composition and display device using the same: The resin composition of the present invention is a resin composition characterized by including (a) a polyimide, a polybenzoxazole, a polyimide precursor or a polybenzoxazole precursor, (b) 1,5-dihydroxynaphthalene, 1,6-dihydroxynaphthalene, 1,7-dihydroxynaphthalene, or 2,3-dihydroxynaphthalene, and (c) a thermal cross-linking agent having a specific structure. By the use of the resin composition of... Agent: Toray Industries, Inc.

20140191207 - Silicon-based compound and organic light emitting diode comprising the same: A silicon based compound and an organic light-emitting diode including the same.... Agent:

20140191212 - Substrate with an electrode for an oled device and such an oled device: A substrate carrying an OLED electrode, with a sheet resistance of less than 25 Ω/square, includes an electrically conducting coating, an essentially inorganic thin electrically conducting layer which is a work-function-matching layer and which exhibits a sheet resistance at least 20 times greater than the sheet resistance of the electrically... Agent:

20140191218 - X-ray-sensitive devices and systems using organic pn junction photodiodes: An x-ray detector includes a first electrode, a second electrode spaced apart from the first electrode, an organic p-type semiconducting layer disposed between the first and second electrodes, and an organic n-type semiconducting layer disposed between the first and second electrodes and in contact with the organic p-type semiconducting layer... Agent: The Johns Hopkins University

20140191231 - Display device and method of manufacturing the same: According to one embodiment, a method of manufacturing a thin-film transistor circuit substrate including forming an oxide semiconductor thin film above an insulative substrate, forming a gate insulation film and a gate electrode which are stacked on a first region of the oxide semiconductor thin film, and exposing from the... Agent: Japan Display Inc.

20140191230 - Semiconductor device: A semiconductor device includes a base insulating film including silicon, an oxide semiconductor film over the base insulating film, a gate insulating film over the oxide semiconductor film, a gate electrode which is in contact with the gate insulating film and overlaps with at least the oxide semiconductor film, and... Agent: Semiconductor Energy Laboratory Co., Ltd.

20140191232 - Semiconductor device: An intrinsic or substantially intrinsic semiconductor, which has been subjected to a step of dehydration or dehydrogenation and a step of adding oxygen so that the carrier concentration is less than 1×1012/cm3 is used for an oxide semiconductor layer of an insulated gate transistor, in which a channel region is... Agent: Semiconductor Energy Laboratory Co., Ltd.

20140191229 - Semiconductor structure including a zirconium oxide material: Semiconductor structures including a zirconium oxide material and methods of forming the same are described herein. As an example, a semiconductor structure can include a zirconium oxide material, a perovskite structure material, and a noble metal material formed between the zirconium oxide material and the perovskite structure material.... Agent: Micron Technology, Inc.

20140191228 - Thin film transistor, method of fabricating the same, and display apparatus having the same: A thin film transistor includes a semiconductor layer disposed on a base substrate and including an oxide semiconductor material, a source electrode and a drain electrode, which respectively extend from opposing ends of the semiconductor layer, a plurality of low carrier concentration areas respectively disposed between the source electrode and... Agent: Samsung Display Co., Ltd.

20140191235 - Measuring current and resistance using combined diodes/resistor structure to monitor integrated circuit manufacturing process variations: A plurality of diode/resistor devices are formed within an integrated circuit structure using manufacturing equipment operatively connected to a computerized machine. Each of the diode/resistor devices comprises a diode device and a resistor device integrated into a single structure. The resistance of each of the diode/resistor devices is measured during... Agent: International Business Machines Corporation

20140191233 - Microphone component: A 2-chip MEMS microphone component includes: at least one first MEMS microphone structural component having at least one first microphone structure formed in the front side of the structural component; an ASIC structural component having evaluation electronics for the microphone signal of the MEMS microphone structural component; and a housing... Agent: Robert Bosch Gmbh

20140191234 - Three dimensional stacked structure for chips: A 3-D chip stacked structure is disclosed. Each chip layer is provided with plural single-layered conductive members where among the same chip layer the two adjacent conductive members are structurally formed in minor symmetric way with each other along a chip longitudinal direction and the arrangements of the single-layered conductive... Agent:

20140191236 - Methods and devices for fabricating and assembling printable semiconductor elements: The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials.... Agent: The Board Of Trustees Of The University Of Iiiinois

20140191237 - Crystalline thin-film transistor: A method for forming a thin film transistor includes joining a crystalline substrate to an insulating substrate. A doped layer is deposited on the crystalline substrate, and the doped layer is patterned to form source and drain regions. The crystalline substrate is patterned to form an active area such that... Agent: International Business Machines Corporation

20140191238 - Thin film transistor array panel: A thin film transistor array panel includes a gate line elongated in an extension direction and including a gate and dummy gate electrode extended therefrom; and a source electrode, and a single drain member including a drain electrode at a first end thereof and a dummy drain electrode at an... Agent: Samsung Display Co., Ltd.

20140191239 - Display device: Disclosed is a display device and an electronic apparatus incorporating the display device. The display device includes a transistor and a planarization film over the transistor. The planarization film has an opening where an edge portion is rounded. The display device further includes a first electrode over the planarization film... Agent: Semiconductor Energy Laboratory Co., Ltd.

20140191246 - Bonding transistor wafer to led wafer to form active led modules: LED modules are disclosed having a control MOSFET, or other transistor, in series with an LED. In one embodiment, a MOSFET wafer, containing an array of vertical MOSFETS, is aligned and bonded to an LED wafer, containing a corresponding array of vertical LEDs, and singulated to form thousands of active... Agent: Nthdegree Technologies Worldwide Inc.

20140191241 - Gallium nitride vertical jfet with hexagonal cell structure: An array of GaN-based vertical JFETs includes a GaN substrate comprising a drain of one or more of the JFETs and one or more epitaxial layers coupled to the GaN substrate. The array also includes a plurality of hexagonal cells coupled to the one or more epitaxial layers and extending... Agent: Avogy, Inc.

20140191240 - High electron mobility transistor and method of forming the same: A High Electron Mobility Transistor (HEMT) includes a first III-V compound layer having a first band gap, and a second III-V compound layer having a second band gap over the first III-V compound layer. The second band gap is smaller than the first band gap. The HEMT further includes a... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20140191245 - Light emitting device: Disclosed is a light emitting device. A light emitting device comprises a plurality of N-type semiconductor layers including a first N-type semiconductor layer and a second N-type semiconductor layer on the first N-type semiconductor layer, an active layer on the second N-type semiconductor layer, and a P-type semiconductor layer on... Agent: Lg Innotek Co., Ltd.

20140191242 - Method and system for a gallium nitride vertical transistor: A vertical JFET includes a GaN substrate comprising a drain of the JFET and a plurality of patterned epitaxial layers coupled to the GaN substrate. A distal epitaxial layer comprises a first part of a source channel and adjacent patterned epitaxial layers are separated by a gap having a predetermined... Agent: Avogy, Inc.

20140191244 - Method for conductivity control of (al,in,ga,b)n: A method of controlled p-type conductivity in (Al,In,Ga,B)N semiconductor crystals. Examples include {10 11} GaN films deposited on {100} MgAl2O4 spinel substrate miscut in the <011> direction. Mg atoms may be intentionally incorporated in the growing semipolar nitride thin film to introduce available electronic states in the band structure of... Agent: The Regents Of The University Of California

20140191243 - Patterned articles and light emitting devices therefrom: A patterned article includes a substrate support having planar substrate surface portions including a substrate material having a substrate refractive index. A patterned surface is on the substrate support including a plurality of features lateral to the planar substrate surface portions protruding above a height of the planar substrate surface... Agent: Sinmat, Inc.

20140191249 - Active led module with led and transistor formed on same substrate: An LED module is disclosed containing an integrated driver transistor (e.g, a MOSFET) in series with an LED. In one embodiment, LED layers are grown over a substrate. The transistor regions are formed over the same substrate. After the LED layers, such as GaN layers, are grown to form the... Agent: Nthdegree Technologies Worldwide Inc.

20140191250 - Method for manufacturing semiconductor device, and semiconductor device: A method for manufacturing a semiconductor device is carried out by readying each of a semiconductor element, a substrate having Cu as a principal element at least on a surface, and a ZnAl solder chip having a smaller shape than that of the semiconductor element; disposing the semiconductor element and... Agent: Sumitomo Metal Mining Co., Ltd.

20140191247 - Semiconductor device: According to one embodiment, a semiconductor device includes a gate electrode, a first semiconductor region, a second semiconductor region of a first conductivity type, a third semiconductor region of a second conductivity type and a fourth semiconductor region of the first conductivity type. The first semiconductor region includes a silicon... Agent: Kabushiki Kaisha Toshiba

20140191248 - Semiconductor device: A semiconductor device includes: a semiconductor substrate that has an element region and a peripheral region that surrounds the element region; and a gate pad that is disposed in an area that is on a surface side of the semiconductor substrate. The element region is formed with an insulated gate... Agent: Toyota Jidosha Kabushiki Kaisha

20140191251 - Silicon carbide semiconductor device and method of manufacturing the same: It is expected that both reduction of the resistance of a source region and reduction of a leakage current in a gate oxide film be achieved in an MOSFET in a silicon carbide semiconductor device. A leakage current to occur in a gate oxide film of the MOSFET is suppressed... Agent: Mitsubishi Electric Corporation

20140191252 - Complementary metal oxide semiconductor device, optical apparatus including the same, and method of manufacturing the same: A complementary metal oxide semiconductor (CMOS) device includes an n-type first transistor on a silicon substrate, the n-type first transistor including a Group III-V compound semiconductor substrate, and a p-type second transistor on the silicon substrate, the p-type second transistor including a germanium based substrate.... Agent: Samsung Electronics Co., Ltd.

20140191253 - Optoelectronic device and method for producing optoelectronic devices: An optoelectronic device includes an optoelectronic component that receives or generates radiation, a frame having a cavity, the optoelectronic component being arranged in said cavity, a connection carrier to which the optoelectronic component is fixed, and a cover covering the cavity and forming a radiation passage area for the radiation,... Agent: Osram Opto Semiconductors Gmbh

20140191254 - Hybrid combination of substrate and carrier mounted light emitting devices: A multi-chip light emitting device (LED) uses a low-cost carrier structure that facilitates the use of substrates that are optimized to support the devices that require a substrate. Depending upon the type of LED elements used, some of the LED elements may be mounted on the carrier structure, rather than... Agent:

20140191255 - Led module: In various embodiments, a light emitting diode module may include a carrier plate, at least one light emitting diode, and at least one sensor configured to register light emitted by the light emitting diode. The light emitting diode is attached to a light emitting diode installation side of the carrier... Agent: Osram Gmbh

20140191257 - Electronic devices with yielding substrates: In accordance with certain embodiments, a semiconductor die is adhered directly to a yielding substrate with a pressure-activated adhesive notwithstanding any nonplanarity of the surface of the semiconductor die or non-coplanarity of the semiconductor die contacts.... Agent:

20140191259 - Molded chip fabrication method and apparatus: A method and apparatus for coating a plurality of semiconductor devices that is particularly adapted to coating LEDs with a coating material containing conversion particles. One method according to the invention comprises providing a mold with a formation cavity. A plurality of semiconductor devices are mounted within the mold formation... Agent: Cree, Inc.

20140191258 - Semiconductor light emitting device and method for manufacturing same: According to one embodiment, a semiconductor light emitting device includes not less than three chips. Each of the chips includes a semiconductor layer having a first face, a second face formed on a side opposite to the first face, and a light emitting layer, a p-side electrode, and an n-side... Agent: Kabushiki Kaisha Toshiba

20140191256 - Thin film trannsistor array panel and manufacturing method thereof: Instead of forming contact holes the same way in both the non-image forming peripheral area (PA) and the image forming display area of a thin film transistor array panel, contact holes in the DA are formed to be substantially smaller than those in the PA for thereby improving an aperture... Agent: Samsung Display Co., Ltd.

20140191260 - Light emitting semiconductor structure: The invention provides a light emitting semiconductor structure, which includes a substrate; a first LED chip formed on the substrate; an adhesion layer formed on the first LED chip; and a second light emitting diode chip formed on the adhesion layer, wherein the second LED chip has a first conductive... Agent: Visera Technologies Company Limited

20140191261 - Light emitting heterostructure with partially relaxed semiconductor layer: A light emitting heterostructure including a partially relaxed semiconductor layer is provided. The partially relaxed semiconductor layer can be included as a sublayer of a contact semiconductor layer of the light emitting heterostructure. A dislocation blocking structure also can be included adjacent to the partially relaxed semiconductor layer.... Agent: Sensor Electronic Technology, Inc.

20140191263 - Compositions for an led reflector and articles thereof: Disclosed herein is a resin composition for molding a reflector for a light-emitting semiconductor diode comprising about 25 to about 80 wt. % of an heat-resistant aromatic polyester, about 5 to 50 wt. % of titanium dioxide filler; and about 5 to 50 wt. % of a glass fibers having... Agent:

20140191267 - Light emitting device: A light emitting device according to the embodiment includes a light emitting structure including a first conductive semiconductor layer, an active layer disposed under the first conductive semiconductor layer, and a second conductive semiconductor layer disposed under the active layer. A first electrode is disposed under the light emitting structure... Agent:

20140191270 - Light emitting device and light emitting device package: A light emitting device includes a light emitting layer, a substrate that is transparent to an emission wavelength of the light emitting layer and positioned to receive an emission wavelength from the light emitting layer, a convex pattern including a collection of a plurality of convex portions discretely arranged on... Agent: Rohm Co., Ltd.

20140191266 - Light emitting device and method of manufacturing the light emitting device: In one example embodiment, a light emitting device includes a transparent substrate and a transparent electrode on the transparent substrate, the transparent electrode comprising at least two transparent electrode layers, the at least two transparent electrode layers being successively stacked and having different refractive indices, the refractive index of one... Agent: Samsung Electronics Co., Ltd.

20140191265 - Light emitting devices with improved light extraction efficiency: Light emitting devices with improved light extraction efficiency are provided. The light emitting devices have a stack of layers including semiconductor layers comprising an active region. The stack is bonded to a transparent optical element.... Agent: Koninklijke Philips Electronics N.v

20140191268 - Light emitting element and light emitting element package: A light emitting element includes: a substrate; a first conductive type semiconductor layer stacked on the substrate; a light emitting layer stacked on the first conductive type semiconductor layer; a second conductive type semiconductor layer stacked on the light emitting layer; an ITO layer stacked on the second conductive type... Agent: Rohm Co., Ltd.

20140191271 - Light emitting module: In a light emitting module, a red phosphor is contained in a second phosphor layer so that the wavelength of a second phosphor layer after the wavelength conversion is longer than that of a first phosphor layer. And a blue phosphor and a yellow-green phosphor are contained in the first... Agent: Koito Manufacturing Co., Ltd.

20140191273 - Light-emitting arrangement: A light emitting arrangement is provided, comprising:—a light source capable of emitting light of a first wavelength range;—a primary wavelength converting domain arranged to receive light emitted by said light source and capable of converting at least part of the light of said first wavelength range into light of a... Agent: Koninklijke Philips N.v.

20140191262 - Material with tunable index of refraction: Devices are described including a component comprising an alloy of AlN and AlSb. The component has an index of refraction substantially the same as that of a semiconductor in the optoelectronic device, and has high transparency at wavelengths of light used in the optoelectronic device. The component is in contact... Agent: Intermolecular Inc.

20140191272 - Optoelectronic component and method for producing an optoelectronic component: An optoelectronic component includes a substrate, on which a semiconductor chip and a wettable attractor element are arranged. A medium including pigments at least regionally covers the exposed region of the substrate that is not covered by the semiconductor chip and the attractor element. The medium at least partly wets... Agent: Osram Opto Semiconductors Gmbh

20140191269 - Semiconductor light emitting device: According to one embodiment, a semiconductor light emitting device includes a stacked structure body, a first electrode, a second electrode, and a dielectric body part. The stacked structure body includes a first semiconductor layer, having a first portion and a second portion juxtaposed with the first portion, a light emitting... Agent: Kabushiki Kaisha Toshiba

20140191264 - Semiconductor light-emitting device: There is provided a semiconductor light-emitting device including a substrate having a first refractive index, a nitride semiconductor layer formed on the substrate and having a second refractive index that is different from the first refractive index, a light-emitting structure formed on the nitride semiconductor layer and including a first... Agent: Samsung Electronics Co., Ltd.

20140191275 - Ceramic substrate adapted to mounting electronic component and electronic component module: To provide a ceramic substrate having a reflective film formed on the surface thereof that is suitable for mounting electronic components such as LEDs, a ceramic substrate 1 includes a ceramic substrate body 2, a terminal 4 for connecting an electronic component 3 on the ceramic substrate body 2, and... Agent: Panasonic Corporation

20140191279 - Light emitting device and lighting system: A light emitting device includes a conductive support member, a first conductive layer disposed on the conductive support member, a second conductive layer disposed on the first conductive layer, a light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first... Agent: Lg Innotek Co., Ltd.

20140191280 - Light emitting device and lighting system: A light emitting device includes a conductive support member, a first conductive layer disposed on the conductive support member, a second conductive layer disposed on the first conductive layer, a light emitting structure including a first semiconductor layer, layer disposed on the second conductive layer, a second semiconductor layer, and... Agent: Lg Innotek Co., Ltd.

20140191278 - Light emitting device and method of manufacturing the light emitting device: A light emitting device includes a base body forming a recess defined by a bottom surface and a side wall thereof, a conductive member whose upper surface being exposed in the recess and whose lower surface forming an outer surface, a protruding portion disposed in the recess, a light emitting... Agent: Nichia Corporation

20140191276 - Light emitting device package: Disclosed is a light emitting device package with improved light extraction efficiency. The light emitting device package includes a substrate, a light emitting device disposed on the substrate, and a light transmission unit disposed above the light emitting device, the light transmission unit being spaced from the light emitting device,... Agent: Lg Innotek Co., Ltd.

20140191277 - Light-emitting device: A light-emitting device comprises: a light-emitting semiconductor stack comprising a recess and a mesa, wherein the recess comprises a bottom and the mesa comprises an upper surface; a first insulating layer in the recess and on a part of the upper surface of the mesa; and a first electrode comprising... Agent: Epistar Corporation

20140191274 - Substrate, semiconductor construction, and manufacturing method thereof: A substrate includes a die-bonding zone and a glue spreading pattern. The die-bonding zone is set to bond a die. The glue spreading pattern is placed in the die-bonding zone and includes a containing space. The die is placed on the glue spreading pattern, an area of a bottom of... Agent: Unistars Corporation

20140191281 - High voltage semiconductor device: An n well region and an n−region surrounding the n well region are provided in the surface layer of a p−silicon substrate. The n−region includes breakdown voltage regions in which high voltage MOSFETs are disposed. The n well region includes a logic circuit region in which a logic circuit is... Agent: Fuji Electric Co., Ltd

20140191282 - Semiconductor device: According to one embodiment, a semiconductor device includes a base layer, a second conductivity type semiconductor layer, a first insulating film, and a first electrode. The first insulating film is provided on an inner wall of a plurality of first trenches extending from a surface of the second conductivity type... Agent: Kabushiki Kaisha Toshiba

20140191283 - Group iii nitrides on nanopatterned substrates: A patterned substrate is provided having at least two mesa surface portions, and a recessed surface located beneath and positioned between the at least two mesa surface portions. A Group III nitride material is grown atop the mesa surface portions of the patterned substrate and atop the recessed surface. Growth... Agent: International Business Machines Corporation

20140191284 - Group iii nitrides on nanopatterned substrates: A patterned substrate is provided having at least two mesa surface portions, and a recessed surface located beneath and positioned between the at least two mesa surface portions. A Group III nitride material is grown atop the mesa surface portions of the patterned substrate and atop the recessed surface. Growth... Agent: International Business Machines Corporation

20140191285 - Semiconductor device having epitaxial structures: A semiconductor device having epitaxial structures includes a gate structure positioned on a substrate, epitaxial structures formed in the substrate at two sides of the gate structure, and an undoped cap layer formed on the epitaxial structures. The epitaxial structures include a dopant. The epitaxial structures and the undoped cap... Agent: United Microelectronics Corp.

20140191286 - Compressive strained iii-v complementary metal oxide semiconductor (cmos) device: A semiconductor device including a first lattice dimension III-V semiconductor layer present on a semiconductor substrate, and a second lattice dimension III-V semiconductor layer that present on the first lattice dimension III-V semiconductor layer, wherein the second lattice dimension III-V semiconductor layer has a greater lattice dimension than the first... Agent: International Business Machines Corporation

20140191287 - Compressive strained iii-v complementary metal oxide semiconductor (cmos) device: A semiconductor device including a first lattice dimension III-V semiconductor layer present on a semiconductor substrate, and a second lattice dimension III-V semiconductor layer that present on the first lattice dimension III-V semiconductor layer, wherein the second lattice dimension III-V semiconductor layer has a greater lattice dimension than the first... Agent: International Business Machines Corporation

20140191288 - Semiconductor device and method for manufacturing semiconductor device: A method for manufacturing a semiconductor device includes forming an electron transit layer on a semiconductor substrate, forming an electron supply layer on the electron transit layer, forming a cap layer on the electron supply layer, forming a protection layer on the cap layer, the protection layer having an opening... Agent: Fujitsu Semiconductor Limited

20140191289 - Image sensors with multiple output structures: In various embodiments, image sensors incorporate multiple output structures by including multiple sub-arrays, at least one of which includes a region of active pixels, a dark pixel region that is fanned and/or slanted, a dark pixel region that is unfanned and unslanted, a horizontal CCD, and an output structure for... Agent: Truesense Imaging, Inc.

20140191290 - Solid-state imaging element: Provided is a solid-state imaging element that effectively reduces 1/f noise from a signal output from a source-follower transistor. The solid-state imaging element includes a first conductivity type substrate 10, a photodiode in which carriers are accumulated in a second conductivity type accumulation region, the second conductivity type being different... Agent: Sharp Kabushiki Kaisha

20140191291 - Method of manufacturing a non-volatile memory: The disclosure relates to a method of manufacturing vertical gate transistors in a semiconductor substrate, comprising implanting, in the depth of the substrate, a doped isolation layer, to form a source region of the transistors; forming, in the substrate, parallel trench isolations and second trenches perpendicular to the trench isolations,... Agent:

20140191294 - Backside stimulated sensor with background current manipulation: A CMOS (Complementary Metal Oxide Semiconductor) pixel for sensing at least one selected from a biological, chemical, ionic, electrical, mechanical and magnetic stimulus. The CMOS pixel includes a substrate including a backside, a source coupled with the substrate to generate a background current, and a detection element electrically coupled to... Agent:

20140191292 - Methods and systems for point of use removal of sacrificial material: A method of manufacturing a sensor, the method including forming an array of chemically-sensitive field effect transistors (chemFETs), depositing a dielectric layer over the chemFETs in the array, depositing a protective layer over the dielectric layer, etching the dielectric layer and the protective layer to form cavities corresponding to sensing... Agent: Life Technologies Corporation

20140191293 - Methods for manufacturing well structures for low-noise chemical sensors: In one implementation, a method for manufacturing a chemical detection device is described. The method includes forming a chemical sensor having a sensing surface. A dielectric material is deposited on the sensing surface. A first etch process is performed to partially etch the dielectric material to define an opening over... Agent: Life Technologies Corporation

20140191299 - Dual damascene metal gate: A method for fabricating a dual damascene metal gate includes forming a dummy gate onto a substrate, disposing a protective layer on the substrate and the dummy gate, and growing an expanding layer on sides of the dummy gate. The method further includes removing the protective layer, forming a spacer... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20140191295 - Dummy gate interconnect for semiconductor device: A method of forming a semiconductor device comprising a dummy gate interconnect includes forming a dummy gate on a substrate, the dummy gate comprising a dummy gate metal layer located on the substrate, and a dummy gate polysilicon layer located on the dummy gate metal layer; forming an active gate... Agent: International Business Machines Corporation

20140191300 - Hard mask etch stop for tall fins: A hard mask etch stop is formed on the top surface of tall fins to preserve the fin height and protect the top surface of the fin from damage during etching steps of the transistor fabrication process. In an embodiment, the hard mask etch stop is formed using a dual... Agent:

20140191296 - Self-aligned dielectric isolation for finfet devices: Embodiments of the present invention provide a method of forming semiconductor structure. The method includes forming a set of device features on top of a substrate; forming a first dielectric layer directly on top of the set of device features and on top of the substrate, thereby creating a height... Agent: International Business Machines Corporation

20140191298 - Semiconductor device and manufacturing method of the same: A semiconductor device includes a semiconductor substrate, a metal gate structure, at least an epitaxial layer, an interlayer dielectric, at least a contact hole, at least a metal silicide layer and a fluorine-containing layer. The semiconductor substrate has at least a gate region and at least a source/drain region adjoining... Agent: United Microelectronics Corp.

20140191297 - Strained finfet with an electrically isolated channel: A fin structure includes an optional doped well, a disposable single crystalline semiconductor material portion, and a top semiconductor portion formed on a substrate. A disposable gate structure straddling the fin structure is formed, and end portions of the fin structure are removed to form end cavities. Doped semiconductor material... Agent:

20140191301 - Transistor and fabrication method: Transistors and fabrication methods are provided. A first sidewall can be formed on each sidewall of a gate structure. A second sidewall can be formed on the first sidewall. The first sidewall can be made of a doped material. After forming a source and a drain, a metal silicide layer... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20140191302 - Photonics device and cmos device having a common gate: A semiconductor chip having a photonics device and a CMOS device which includes a photonics device portion and a CMOS device portion on a semiconductor chip; a metal or polysilicon gate on the CMOS device portion, the metal or polysilicon gate having a gate extension that extends toward the photonics... Agent: International Business Machines Corporation

20140191303 - Semiconductor devices including back-side integrated circuitry: Semiconductor devices may include a semiconductor substrate comprising at least one of transistors and capacitors may be located at an active surface of the semiconductor substrate. An imperforate dielectric material may be located on the active surface, the imperforate dielectric material covering the at least one of transistors and the... Agent: Micron Technology, Inc.

20140191304 - Cmos transistors, fin field-effect transistors and fabrication methods thereof: A method is provided for fabricating a transistor. The method includes providing a semiconductor substrate; and configuring a channel region along a first direction. The method also includes forming trenches at both sides of the channel region along a second direction; and forming a magnetic material layer in each of... Agent:

20140191305 - Integrated switch devices: Various aspects of the technology include an integrated circuit device comprising a compound semiconductor layer and a plurality of input, switch, and ground ohmic metal fingers fabricated on the compound semiconductor layer in a repeating sequence. A control gate may be disposed between each input finger and adjacent switch finger,... Agent:

20140191306 - Semiconductor constructions, methods of forming vertical memory strings, and methods of forming vertically-stacked structures: Some embodiments include methods of forming vertical memory strings. A trench is formed to extend through a stack of alternating electrically conductive levels and electrically insulative levels. An electrically insulative panel is formed within the trench. Some sections of the panel are removed to form openings. Each opening has a... Agent: Micron Technology, Inc.

20140191307 - Memory device and method of fabricating thereof: Subject matter disclosed herein relates to a process flow to form a gate structure of a memory device.... Agent: Micron Technology, Inc.

20140191308 - Self-aligned double patterning for memory and other microelectronic devices: A semiconductor device is provided. The semiconductor device includes a microelectronic layer, a first mask layer formed on the microelectronic layer having first features separated by first openings, and a second mask layer formed on the first mask layer having second features that are separated by second openings. Each second... Agent: Spansion LLC

20140191310 - Power semiconductor device: A power semiconductor device according to an embodiment includes an element portion in which MOSFET elements are provided and a termination portion provided around the element portion, and has pillar layers provided respectively in parallel to each other in a semiconductor substrate. The device includes a first trench and a... Agent: Kabushiki Kaisha Toshiba

20140191309 - Vertical power mosfet: When forming a super junction by the embedded epitaxial method, adjusting a taper angle of dry etching to form an inclined column is generally performed in trench forming etching, in order to prevent a reduction in breakdown voltage due to fluctuations in concentration in an embedded epitaxial layer. However, according... Agent: Renesas Electronics Corporation

20140191312 - Semiconductor device and method of forming the same: A semiconductor device includes a substrate having an active region and a device isolation layer defining the active region, a gate electrode on the active region, source/drain regions at the active region at both sides of the gate electrode, a buffer insulating layer on the device isolation layer, an etch... Agent:

20140191313 - Semiconductor device and method of manufacturing the same: Provided is a semiconductor device formed with a trench portion for providing a concave portion in a gate width direction and with a gate electrode provided within and on a top surface of the trench portion via a gate insulating film. At least a part of a surface of each... Agent: Seiko Instruments Inc.

20140191311 - Semiconductor structure and method for manufacturing the same: Provided is a semiconductor structure and a method for manufacturing the same. By the channel reestablishment, the tops of the source/drain regions located on both sides of the spacers are higher than bottoms of the gate stack structure and the spacers, and the source/drain regions laterally extend below the bottoms... Agent: Institute Of Microelectronics, Chinese Academy Of Sciences

20140191314 - Semiconductor device and fabrication method: Semiconductor devices and fabrication methods are provided. A fin can be formed on a semiconductor substrate, a gate can be formed across the fin, and sidewall spacers can be formed across the fin on both sides of the gate. A dummy contact can be formed across the fin and on... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20140191316 - Mos transistors and fabrication method thereof: A method is provided for fabricating an MOS transistor. The method includes providing a semiconductor substrate, and forming a gate structure having a gate dielectric layer and a gate metal layer on the semiconductor substrate. The method also includes forming offset sidewall spacers at both sides of the gate structure,... Agent: Semiconductor Manufacturing International Corp.

20140191315 - Multigate metal oxide semiconductor devices and fabrication methods: A semiconductor device includes a first well and a second well implanted in a semiconductor substrate. The semiconductor device further includes a gate structure above the first and second wells between a raised source structure and a raised drain structure. The raised source structure above is in contact with the... Agent: Broadcom Corporation

20140191317 - Rf ldmos device and method of forming the same: An RF LDMOS device is disclosed, including: a substrate having a first conductivity type; a channel doped region having the first conductivity type and a drift region having a second conductivity type, each in an upper portion of the substrate, the channel doped region having a first end in lateral... Agent: Shanghai Huahong Grace Semiconductor Manufacturing Corporation

20140191318 - Complementary metal oxide semiconductor field effect transistor, metal oxide semiconductor field effect transistor and manufacturing method thereof: A complementary metal oxide semiconductor field-effect transistor (MOSFET) includes a substrate, a first MOSFET and a second MOSFET. The first MOSFET is disposed on the substrate within a first transistor region and the second MOSFET is disposed on the substrate within a second transistor region. The first MOSFET includes a... Agent: United Microelectronics Corp.

20140191320 - Crystalline thin-film transistor: A method for forming a thin film transistor includes joining a crystalline substrate to an insulating substrate. A doped layer is deposited on the crystalline substrate, and the doped layer is patterned to form source and drain regions. The crystalline substrate is patterned to form an active area such that... Agent: International Business Machines Corporation

20140191319 - Finfet compatible diode for esd protection: A diode for integration with finFET devices is disclosed. An in-situ doped epitaxial silicon region is grown on the cathode or anode of the diode to increase the surface area of the junction and overall silicon volume for improved heat dissipation during an ESD event.... Agent: International Business Machines Corporation

20140191321 - Finfet with dielectric isolation by silicon-on-nothing and method of fabrication: An improved finFET and method of fabrication using a silicon-on-nothing process flow is disclosed. Nitride spacers protect the fin sides during formation of cavities underneath the fins for the silicon-on-nothing (SON) process. A flowable oxide fills the cavities to form an insulating dielectric layer under the fins.... Agent: International Business Machines Corporation

20140191322 - Silicon-on-insulator heat sink: An approach for sinking heat from a transistor is provided. A method includes forming a substrate contact extending from a first portion of a silicon-on-insulator (SOI) island to a substrate. The method also includes forming a transistor in a second portion of the SOI island. The method further includes electrically... Agent: International Business Machines Corporation

20140191323 - Method of forming finfet of variable channel width: Embodiments of present invention provide a method of forming a first and a second group of fins on a substrate; covering a top first portion of the first and second groups of fins with a first dielectric material; covering a bottom second portion of the first and second groups of... Agent: International Business Machines Corporation

20140191324 - Methods of forming bulk finfet devices by performing a recessing process on liner materials to define different fin heights and finfet devices with such recessed liner materials: One method includes performing an etching process through a patterned mask layer to form trenches in a substrate that defines first and second fins, forming liner material adjacent the first fin to a first thickness, forming liner material adjacent the second fin to a second thickness different from the first... Agent: Globalfoundries Inc.

20140191325 - Fin-shaped field effect transistor (finfet) structures having multiple threshold voltages (vt) and method of forming: Various embodiments include fin-shaped field effect transistor (finFET) structures that enhance work function and threshold voltage (Vt) control, along with methods of forming such structures. The finFET structures can include a p-type field effect transistor (PFET) and an n-type field effect transistor (NFET). In some embodiments, the PFET has fins... Agent: International Business Machines Corporation

20140191326 - Photonics device and cmos device having a common gate: A semiconductor chip having a photonics device and a CMOS device which includes a photonics device portion and a CMOS device portion on a semiconductor chip; a metal or polysilicon gate on the CMOS device portion, the metal or polysilicon gate having a gate extension that extends toward the photonics... Agent: International Business Machines Corporation

20140191327 - Semiconductor memory device: A semiconductor memory device has a memory cell array with memory cells, each including first and second conduction type transistors, column-side peripheral circuits disposed with the same row-direction interval as the memory cells, a first conduction type well region formed within the memory cell array, a second conduction type well... Agent: Fujitsu Semiconductor Limited

20140191328 - Semiconductor memory device: A semiconductor memory device has a memory cell array having memory cells, each including first and second conduction type transistors, a peripheral circuit having the first and second conduction type transistors, a first conduction type memory cell array well region within the memory cell array region, a second conduction type... Agent: Fujitsu Semiconductor Limited

20140191329 - Method for producing metal contacts within an integrated circuit, and corresponding integrated circuit: An integrated circuit includes a MOS transistor having a gate region and source and drain regions separated from the gate region by insulating spacers. At least two metal contact pads respectively contact with two metal silicide regions (for example, a cobalt silicide) which lie within the source and drain regions.... Agent: Stmicroelectronics (rousset) Sas

20140191330 - Finfet and method of fabrication: An improved finFET and method of fabrication is disclosed. Embodiments of the present invention take advantage of the different epitaxial growth rates of {110} and {100} silicon. Fins are formed that have {110} silicon on the fin tops and {100} silicon on the long fin sides (sidewalls). The lateral epitaxial... Agent: International Business Machines Corporation

20140191331 - Transistor and its method of manufacture: A method of manufacturing a transistor comprising: providing a substrate, a region of semiconductive material supported by the substrate, and a region of electrically conductive material supported by the region of semiconductive material; forming at least one layer of resist material over said regions to form a covering of resist... Agent: Pragmatic Printing Ltd

20140191332 - Pfet devices with different structures and performance characteristics: Disclosed herein is a device that includes a first PFET transistor formed in and above a first active region of a semiconducting substrate, a second PFET transistor formed in and above a second active region of the semiconducting substrate, wherein at least one of a thickness of the first and... Agent: Globalfoundries Inc.

20140191333 - Method of protecting an interlayer dielectric layer and structure formed thereby: This description relates to a method including forming an interlayer dielectric (ILD) layer and a dummy gate structure over a substrate and forming a cavity in a top portion of the ILD layer. The method further includes forming a protective layer to fill the cavity. The method further includes planarizing... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20140191336 - Cross-hair cell wordline formation: Methods and devices depicting fabrication of non-planar access devices having fins and narrow trenches, among which is a method that includes wet etching a conductor to form a recessed region and subsequently etching the conductor to form gates on the fins. The wet etching may include formation of recesses which... Agent: Micron Technology, Inc.

20140191338 - Semiconductor device and method for manufacturing same: In a region just below an access gate electrode in an SRAM memory cell, a second halo region is formed adjacent to a source-drain region and a first halo region is formed adjacent to a first source-drain region. In a region just below a drive gate electrode, a third halo... Agent: Renesas Electronics Corporation

20140191335 - Semiconductor device and method of manufacturing the same: The present invention discloses a semiconductor device, comprising a plurality of fins located on a substrate and extending along a first direction; a plurality of gate stack structures extending along a second direction and across each of the fins; a plurality of stress layers located in the fins on both... Agent:

20140191337 - Stacked half-bridge package: According to an exemplary embodiment, a stacked half-bridge package includes a control transistor having a control drain for connection to a high voltage input, a control source coupled to an output terminal, and a control gate for being driven by a driver IC. The stacked half-bridge package also includes a... Agent: International Rectifier Corporation

20140191334 - Stacked power semiconductor device using dual lead frame: A stacked power semiconductor device includes vertical metal oxide semiconductor field-effect transistors and dual lead frames packaged with flip-chip technology. In the method of manufacturing the stacked power semiconductor device, a first semiconductor chip is flip chip mounted on the first lead frame. A mounting clips is connected to the... Agent:

20140191339 - Semiconductor structures and fabrication method thereof: A method is provided for fabricating a semiconductor structure. The method includes providing a semiconductor substrate having a plurality of first doped regions and second doped regions; and forming a first dielectric layer on the semiconductor substrate. The method also includes forming a first gate dielectric layer and a second... Agent:

20140191340 - Transistors, semiconductor constructions, and methods of forming semiconductor constructions: Some embodiments include a transistor having a first electrically conductive gate portion along a first segment of a channel region and a second electrically conductive gate portion along a second segment of the channel region. The second electrically conductive gate portion is a different composition than the first electrically conductive... Agent: Micron Technology, Inc.

20140191342 - Mems sensor: There is provided a MEMS sensor including a signal processing LSI equipped with a temperature sensor for measuring temperature of a sensor, and a MEMS sensor chip overlaid on the signal processing LSI, the MEMS sensor chip being mounted on a heat generating part of the signal processing LSI. This... Agent: Hitachi Automotive Systems, Ltd.

20140191341 - Method and apparatus for a semiconductor structure: A semiconductor structure may include a first device having first surface with a first bonding layer formed thereon and a second device having a first surface with a second bonding layer formed thereon. The first bonding layer may provide an electrically conductive path to at least one electrical device in... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20140191344 - Mems process and device: A method of fabricating a micro-electrical-mechanical system (MEMS) transducer comprises the steps of forming a membrane on a substrate, and forming a back-volume in the substrate. The step of forming a back-volume in the substrate comprises the steps of forming a first back-volume portion and a second back-volume portion, the... Agent: Wolfson Microelectronics PLC

20140191343 - Sound transducer and microphone using same: Provided is an acoustic transducer including: a semiconductor substrate; a vibrating membrane, provided above the semiconductor substrate, including a vibrating electrode; and a fixed membrane, provided above the semiconductor substrate, including a fixed electrode, the acoustic transducer detecting a sound wave according to changes in capacitances between the vibrating electrode... Agent: Omron Corporation

20140191345 - Magnetic memory device and method of manufacturing the same: A magnetic memory with a memory layer having magnetization, the direction of magnetization of which changes according to information recorded therein; a reference layer having a fixed magnetization against which magnetization of the memory layer can be compared; a nonmagnetization layer between the memory layer and the reference layer; and... Agent: Sony Corporation

20140191346 - Magnetic memory devices including magnetic layers separated by tunnel barriers: A magnetic memory device may include a first vertical magnetic layer, a non-magnetic layer on the first vertical magnetic layer, and a first junction magnetic layer on the non-magnetic layer, with the non-magnetic layer being between the first vertical magnetic layer and the first junction magnetic layer. A tunnel barrier... Agent:

20140191348 - Integrated circuit and manufacturing method: Disclosed is an integrated circuit comprising a substrate (10); and an optical CO2 sensor comprising: first and second light sensors (12, 12′) on said substrate, said second light sensor being spatially separated from the first light sensor; and a layer portion (14) including an organic compound comprising at least one... Agent: Nxp B.v.

20140191347 - Solid-state imaging device: According to one embodiment, a solid-state imaging device includes a semiconductor substrate including a pixel area and a peripheral circuit area, an interconnection structure provided on a first principal surface of the semiconductor substrate and including first interconnection layers electrically connected to the peripheral circuit area, a second interconnection layer... Agent: Kabushiki Kaisha Toshiba

20140191350 - Image sensor chip package and fabricating method thereof: An image sensor chip package is disclosed, which includes a substrate, an image sensor component formed on the substrate, a spacer formed on the substrate and surrounding the image sensor component, and a transparent plate. A stress notch is formed on a side of the transparent plate, and a breaking... Agent: Xintec Inc.

20140191351 - Miniature phase-corrected antennas for high resolution focal plane thz imaging arrays: An imaging/detection device includes a hemispherical lens having a surface opposite a curvature of the hemispherical lens, where the hemispherical lens defines an optical axis. The imaging/detection device also includes a plurality of detectors arranged on a focal plane array that is positioned near the surface of the hemispherical lens.... Agent: Ohio State University

20140191349 - Solid-state imaging apparatus and method of manufacturing the same: The present invention provides a solid-state imaging apparatus which has hollow portions provided around each of color filters and achieves the prevention of the peeling of each of the color filters. The solid-state imaging apparatus having a plurality of light receiving portions provided on a semiconductor substrate includes: a plurality... Agent: Canon Kabushiki Kaisha

20140191352 - Wafer-level packaging method of bsi image sensors having different cutting processes: A wafer-level packaging method of BSI image sensors includes the following steps: S1: providing a wafer package body comprising a silicon base, an interconnect layer, a hollow wall and a substrate; S2: cutting the wafer package body via a first blade in a first cutting process to separate the interconnect... Agent: China Wafer Level Csp Co., Ltd.

20140191353 - Solid-state imaging device, method of manufacturing the same, and electronic equipment: A solid state imaging device including a semiconductor layer comprising a plurality of photodiodes, a first antireflection film located over a first surface of the semiconductor layer, a second antireflection film located over the first antireflection film, a light shielding layer having side surfaces which are adjacent to at least... Agent: Sony Corporation

20140191354 - Laser system with polarized oblique incidence angle and associated methods: Novel laser processed semiconductor materials, systems, and methods associated with the manufacture and use of such materials are provided. In one aspect, for example, a method of processing a semiconductor material can include providing a semiconductor material and irradiating a target region of the semiconductor material with a beam of... Agent: Sionyx, Inc.

20140191355 - Image sensors with multiple output structures: In various embodiments, image sensors incorporate multiple output structures by including multiple sub-arrays, at least one of which includes a region of active pixels, a dark pixel region that is fanned and/or slanted, a dark pixel region that is unfanned and unslanted, a horizontal CCD, and an output structure for... Agent: Truesense Imaging, Inc.

20140191357 - Multi-substrate image sensor having a dual detection function: The present invention relates to an image sensor in which substrates are stacked, wherein a substrate-stacked image sensor according to the present invention is configured such that a first photodiode is formed on a first substrate, a second photodiode is formed on a second substrate, the two substrates are aligned... Agent: Siliconfile Technologies Inc.

20140191356 - Solid-state imaging apparatus: A solid-state imaging apparatus is disclosed in which, in a first unit cell, light is collected to maximize an amount of light received when the light is incident at a first angle-of-incidence, and in a second unit cell adjacent to the first unit cell, light is collected to maximize an... Agent: Panasonic Corporation

20140191358 - Two-portion shallow-trench isolation: A shallow trench isolation (STI) and method of forming the same is provided. The STI structure comprises an upper insulating portion and a lower insulating portion, wherein the lower insulating portion includes a first insulator and an insulating layer surrounding the first insulator, the upper insulating portion includes a second... Agent: United Microelectronics Corp.

20140191359 - Semiconductor-on-oxide structure and method of forming: Semiconductor-on-oxide structures and related methods of forming such structures are disclosed. In one case, a method includes: forming a first dielectric layer over a substrate; forming a first conductive layer over the first dielectric layer, the first conductive layer including one of a metal or a silicide; forming a second... Agent: International Business Machines Corporation

20140191360 - Esd protection device and method for producing the same: An ESD protection device includes a first discharge electrode and a second discharge electrode arranged to oppose each other, a discharge supporting electrode formed so as to span between the first and second discharge electrodes, and an insulator substrate that retains the first and second discharge electrodes and the discharge... Agent: Murata Manufacturing Co., Ltd.

20140191361 - Electroless plating of cobalt alloys for on chip inductors: A method for forming an on-chip magnetic structure includes forming a seed layer over a substrate of a semiconductor chip. The seed layer is patterned to provide a plating location. A cobalt based alloy is electrolessly plated at the plating location to form an inductive structure on the semiconductor chip.... Agent: International Business Machines Corporation

20140191362 - Electroless plating of cobalt alloys for on chip inductors: A method for forming an on-chip magnetic structure includes forming a seed layer over a substrate of a semiconductor chip. The seed layer is patterned to provide a plating location. A cobalt based alloy is electrolessly plated at the plating location to form an inductive structure on the semiconductor chip.... Agent: International Business Machines Corporation

20140191363 - External storage device and method of manufacturing external storage device: An external storage device including an interconnect substrate having a contact type external terminal, at least one semiconductor chip disposed over a first surface of the interconnect substrate, and a sealing resin layer which seals the at least one semiconductor chip and does not cover the external terminal. The at... Agent: Renesas Electronics Corporation

20140191364 - Method of fabricating metal-insulator-metal (mim) capacitor within topmost thick inter-metal dielectric layers: Embodiments of MIM capacitors may be embedded into a thick IMD layer with enough thickness (e.g., 10 KŘ30 KÅ) to get high capacitance, which may be on top of a thinner IMD layer. MIM capacitors may be formed among three adjacent metal layers which have two thick IMD layers separating... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20140191365 - Device design for partially oriented rutile dielectrics: Methods include forming a dielectric layer from a first material above a substrate. The dielectric layer is formed such that a preferred crystal direction for at least one electrical property of the first material is parallel to a surface of the dielectric layer. Next, forming a first and second trench... Agent: Intermolecular, Inc.

20140191366 - High-k and metal filled trench-type edram capacitor with electrode depth and dimension control: Partial removal of organic planarizing layer (OPL) material forms a plug of OPL material within an aperture that protects underlying material or electronic device such as a deep trench capacitor during other manufacturing processes. The OPL plug thus can absorb any differences or non-uniformity in, for example, etch rates across... Agent: International Business Machines Corporation

20140191367 - Sandwich damascene resistor: A method is provided for forming sandwich damascene resistors in MOL processes and the resulting devices. Embodiments include forming on a substrate a film stack including an interlayer dielectric (ILD), a first dielectric layer, and a sacrifice layer (SL); removing a portion of the SL and the first dielectric layer,... Agent: Globalfoundries Singapore Pte. Ltd.

20140191368 - Semiconductor integrated circuit device: Diffusion regions having the same conductivity type are arranged on a side of a second wiring and a side of a third wiring, respectively under a first wiring connected to a signal terminal. Diffusion regions are separated in a whole part or one part of a range in a Y... Agent: Panasonic Corporation

20140191369 - Nitride semicondutor device: A nitride semiconductor device includes a first nitride semiconductor layer, and an npn junction structure including a second nitride semiconductor layer of an n-type conductivity, a third nitride semiconductor layer of a p-type conductivity, and a fourth nitride semiconductor layer of an n-type conductivity layered in this order on the... Agent: Hitachi Metals, Ltd.

20140191370 - Silicon single crystal wafer, manufacturing method thereof and method of detecting defects: A silicon single crystal wafer is provided. The silicon single crystal wafer includes an IDP which is divided into an NiG region and an NIDP region, wherein the IDP region is a region where a Cu based defect is not detected, the NiG region is a region where an Ni... Agent:

20140191371 - Catalytic etch with magnetic direction control: A material can be locally etched with arbitrary changes in the direction of the etch. A ferromagnetic-material-including catalytic particle is employed to etch the material. A wet etch chemical or a plasma condition can be employed in conjunction with the ferromagnetic-material-including catalytic particle to etch a material through a catalytic... Agent: International Business Machines Corporation

20140191373 - Composite wafer and method for manufacturing the same: A composite wafer 10 includes a supporting substrate 12 and a semiconductor substrate 14 which are bonded to each other by direct bonding. The supporting substrate 12 is a translucent alumina substrate with an alumina purity of 99% or more. The linear transmittance of the supporting substrate 12 at the... Agent: Ngk Insulators, Ltd.

20140191372 - Spacer assisted pitch division lithography: Spacer-based pitch division lithography techniques are disclosed that realize pitches with both variable line widths and variable space widths, using a single spacer deposition. The resulting feature pitches can be at or below the resolution limit of the exposure system being used, but they need not be, and may be... Agent:

20140191374 - Film thickness metrology: Methods for determining a target thickness of a conformal film with reduced uncertainty, and an integrated circuit (IC) chip having a conformal film of the target thickness are provided. In an embodiment, a first critical dimension of a structure disposed on a wafer is measured. Said structure has at least... Agent: International Business Machines Corporation

20140191375 - Methods for fabricating three-dimensional nano-scale structures and devices: A method of fabricating a 3 dimensional structure, includes: forming a stack of at least 2 layers of photo resist material having different photo resist sensitivities upon a substrate; exposing the stack to beams of electromagnetic radiation or charged particles of different dosages to achieve selective solubility along a height... Agent: The Research Foundation Of State University Of New York

20140191376 - Semiconductor package and fabrication method thereof: A semiconductor package is provided, including: a substrate; a first semiconductor element disposed on the substrate and having a first conductive pad grounded to the substrate; a conductive layer formed on the first semiconductor element and electrically connected to the substrate; a second semiconductor element disposed on the first semiconductor... Agent: Siliconware Precision Industries Co., Ltd.

20140191377 - Integrated circuit package: An integrated circuit package comprising a substrate and at least one semiconductor die is described. A connection unit may provide electrical connections between the substrate and the semiconductor die. The connection unit may comprise a stack of conduction layers and isolation layers stacked atop each other. The stack may include... Agent: Freescale Semiconductor, Inc.

20140191378 - Integrated circuit package: An integrated circuit (IC) package including a bottom leadframe, an interposer mounted on the bottom leadframe, a flipchip die mounted on the interposer and a top leadframe electrically connected to the interposer. Also, a method of making an integrated circuit (IC) package including electrically and physically attaching a die to... Agent: Texas Instruments Incorporated

20140191379 - Low-k chip packaging structure: A low-k chip packaging structure comprising chip body I (2-1), a chip electrode (2-2), and a chip surface passivation layer (2-3). Chip body I (2-1) has coated thereon thin film layer I (2-3). Thin film layer I (2-3) has arranged on a rear face thereof a support wafer (2-5). A... Agent: Jiangyin Changdian Advanced Packaging Co., Ltd.

20140191382 - Circuit substrate, method of manufacturing circuit substrate, and electronic component: A circuit substrate includes: a mounting region having an exposed surface that is planarized, and in which a predetermined chip is to be mounted; patterns provided in the mounting region, and including respective top faces that form a part of the exposed surface; and solder bumps provided on the respective... Agent: Sony Corporation

20140191381 - Integrated circuit module with dual leadframe: An integrated circuit module including a generally flat die attachment pad (DAP) positioned substantially in a first plane; and a generally flat lead bar positioned substantially in a second plane above and parallel to said first plane and having at least one downwardly and outwardly extending lead bar lead projecting... Agent: Texas Instruments Incorporated

20140191380 - Integrated circuit package and method of making: An integrated circuit (“IC”) device and method of making it. The IC device may include a conductive lead frame that has a die pad with a relatively larger central body portion and at least one relatively smaller peripheral portion in electrical continuity with the central body portion. The peripheral portion(s)... Agent: Texas Instruments Incorporated

20140191383 - Power device and method of packaging same: A method of packaging a power semiconductor die includes providing a first lead frame of a dual gauge lead frame. The first lead frame includes a thick die pad. A tape is attached to a first side of the thick die pad and the power die is attached to a... Agent: Freescale Semiconductor, Inc.

20140191384 - Pre-encapsulated etching-then-plating lead frame structure with island and method for manufacturing the same: A method for manufacturing a lead frame structure for semiconductor packaging. The method includes providing a metal substrate having a top surface and a back surface, forming a first photoresist film on the top surface of the metal substrate, forming a top surface etching pattern in the first photoresist film... Agent: Jiangsu Changjiang Electronics Technology Co., Ltd.

20140191385 - Process for producing a metal device housed in a closed housing within an integrated circuit, and corresponding integrated circuit: An integrated circuit includes a number of metallization levels separated by an insulating region disposed over a substrate. A housing includes walls formed from metal portions produced in various metallization levels. A metal device is housed in the housing. An aperture is produced in at least one wall of the... Agent: Stmicroelectronics (rousset) Sas

20140191387 - Method of fabricating land grid array semiconductor package: A fan-out wafer level package is provided with a semiconductor die embedded in a reconstituted wafer. A redistribution layer is positioned over the semiconductor die, and includes a land grid array on a face of the package. A copper heat spreader is formed in the redistribution layer over the die... Agent: Stmicroelectronics Pte Ltd.

20140191386 - Semiconductor package and fabrication method thereof: A semiconductor package is provided. The semiconductor package includes a substrate; a semiconductor element having opposite active and inactive surfaces and disposed on the substrate via the active surface thereof, wherein the inactive surface of the semiconductor element is roughened; a thermally conductive layer bonded to the inactive surface of... Agent: Siliconware Precision Industries Co., Ltd.

20140191388 - 3d stacking semiconductor device and manufacturing method thereof: A 3D stacking semiconductor device and a manufacturing method thereof are provided. The manufacturing method includes the following steps. N layers of stacking structures are provided. Each stacking structure includes a conductive layer and an insulating layer. A first photoresister layer is provided. The stacking structures are etched P−1 times... Agent: Macronix International Co., Ltd.

20140191389 - Semiconductor device and method of manufacturing the same: A semiconductor device includes a substrate in which a cell region and a contact region are defined, a pad structure including a plurality of first conductive layers and a plurality of first insulating layers formed alternately with each other in the contact region of the substrate, wherein an end of... Agent: Sk Hynix Inc.

20140191394 - Bumps for chip scale packaging: A chip scale semiconductor device comprises a semiconductor die, a first bump and a second bump. The first bump having a first diameter and a first height is formed on an outer region of the semiconductor die. A second bump having a second diameter and a second height is formed... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20140191391 - Elongated bump structures in package structure: A package structure includes a chip attached to a substrate. The chip includes a bump structure including a conductive pillar having a length (L) measured along a long axis of the conductive pillar and a width (W) measured along a short axis of the conductive pillar. The substrate includes a... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20140191395 - Forming interconnect structures using pre-ink-printed sheets: A method of forming a device includes printing conductive patterns on a dielectric sheet to form a pre-ink-printed sheet, and bonding the pre-ink-printed sheet onto a side of a substrate. The conductive feature includes a through-substrate via extending from a first major side of the substrate to a second major... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20140191390 - Metal routing architecture for integrated circuits: A device includes a substrate, a metal pad over the substrate, and a metal trace electrically disconnected from the metal pad. The metal pad and the metal trace are level with each other. A passivation layer includes a portion overlapping an edge portion of the metal pad. A metal pillar... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20140191397 - Package substrate and semiconductor package including the same: A package substrate may include an insulating substrate, a dummy pad, a signal pad and a plug. The dummy pad may be formed on an upper surface of the insulating substrate. The signal pad may be formed on the upper surface of the insulating substrate. The signal pad may have... Agent: Samsung Electronics Co., Ltd.

20140191392 - Post-passivation interconnect structure and methods for forming the same: A method includes forming a polymer layer over a passivation layer, wherein the passivation layer further comprises a portion over a metal pad. The polymer layer is patterned to form an opening in the polymer layer, wherein exposed surfaces of the polymer layer have a first roughness. A surface treatment... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20140191393 - Semiconductor package and fabrication method thereof: A semiconductor package is provided, including a carrier having electrical connecting pads, a semiconductor element disposed on the carrier and having electrode pads, conductive elements electrically connected to the electrode pads and the electrical connecting pads, fluorine ions formed between the conductive elements and the electrode pads or between the... Agent: Siliconware Precision Industries Co., Ltd

20140191396 - Semiconductor package and method for fabricating base for semiconductor package: In one configuration, a semiconductor package includes a conductive trace embedded in a base and a semiconductor device mounted on the conductive trace via a conductive structure, wherein the conductive structure is a bump structure and the width of the bump structure is bigger than the width of the conductive... Agent: Media Tek Inc.

20140191398 - Ultraviolet reflective rough adhesive contact: A device including a first semiconductor layer and a contact to the first semiconductor layer is disclosed. An interface between the first semiconductor layer and the contact includes a first roughness profile having a characteristic height and a characteristic width. The characteristic height can correspond to an average vertical distance... Agent: Sensor Electronic Technology, Inc.

20140191399 - Wiring material and semiconductor module using the same: There is provided a wiring material including a core layer made of metal and a clad layer made of metal and a fiber in which the core layer is copper or an alloy containing copper and the clad layer is formed of copper or the alloy containing copper and the... Agent: Hitachi, Ltd.

20140191401 - Airgap interconnect with hood layer and method of formiing: An airgap interconnect structure with hood layer and methods for forming such an airgap interconnect structure are disclosed. A substrate having a dielectric layer with a plurality of interconnects formed therein is provided. Each interconnect is encapsulated by a barrier layer. A hardmask is formed on the dielectric layer and... Agent:

20140191402 - Barrier layer for copper interconnect: A device including a dielectric layer overlying a substrate, a conductive line with a sidewall in the dielectric layer, a Ta layer adjoining the sidewall of the conductive line, and a metal oxide formed between the Ta layer and the dielectric layer.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20140191400 - Semiconductor devices and methods of manufacture thereof: Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes providing a workpiece including an insulating material layer disposed thereon. The insulating material layer includes a trench formed therein. The method includes forming a barrier layer on the sidewalls of... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20140191404 - Local interconnect structure and fabrication method: Local interconnect structures and fabrication methods are provided. A dielectric layer can be formed on a semiconductor substrate. A first film layer can be patterned on the dielectric layer to define a region surrounded by a local interconnect structure to be formed. A sidewall spacer can be formed and patterned... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20140191406 - Manufacturing method for semiconductor package, semiconductor package, and semiconductor device: One aspect of the present invention resides in a manufacturing method for a semiconductor package, including a covering step of forming a covering insulating layer that covers the surface of a semiconductor element, a film-forming step of forming a resin film on the surface of the covering insulating layer, a... Agent: Panasonic Corporation

20140191405 - Method of forming patterns for semiconductor device: Provided is a method of forming patterns for a semiconductor device in which fine patterns and large-width patterns are formed simultaneously and adjacent to each other. In the method, a first layer is formed on a substrate so as to cover a first region and a second region which are... Agent:

20140191403 - Multi-die semiconductor package and method of manufacturing thereof: A multi-die semiconductor package and various methods of manufacturing the same. In one embodiment, the semiconductor package includes: (1) a substrate, (2) a first die coupled to the substrate, the first die having a first set of terminals located along a first edge and bearing a first integrated circuit (IC)... Agent: Lsi Corporation

20140191408 - Backside metal ground plane with improved metal adhesion and design structures: A backside metal ground plane with improved metal adhesion and methods of manufacture are disclosed herein. The method includes forming at least one through silicon via (TSV) in a substrate. The method further includes forming an oxide layer on a backside of the substrate. The method further includes forming a... Agent: International Business Machines Corporation

20140191410 - Damage monitor structure for through-silicon via (tsv) arrays: Described herein are techniques related to techniques for monitoring damage to circuitry or structure neighboring one or more through-silicon vias (TSVs) caused by TSV-related processing. Additionally, techniques for confining diffusion of moisture or chemical from one or more TSVs during TSV-related processing are also described. This Abstract is submitted with... Agent:

20140191407 - Dielectric posts in metal layers: A semiconductor device is disclosed. The semiconductor device includes a substrate comprises a plurality of metal layers. The semiconductor device also includes dielectric posts disposed in the metal layers. The density of the dielectric posts in the metal layers is equal to about 15-25%.... Agent: Globalfoundries Singapore Pte. Ltd.

20140191409 - Forming vias and trenches for self-aligned contacts in a semiconductor structure: A semiconductor structure is formed to include a non-conductive layer with at least one metal line, a first dielectric layer, a first stop layer, a second dielectric layer, a second stop layer, a third stop layer and a fourth stop layer. A first photoresist layer is formed over the upper... Agent: Samsung Electronics Co., Ltd.

20140191411 - Interconnection structures and fabrication method thereof: A method is provided for fabricating an interconnection structure. The method includes providing a substrate having certain semiconductor devices, a metal layer electrically connecting with the semiconductor devices, and a barrier layer on the metal layer. The method also includes forming a dielectric layer on the substrate; and forming an... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20140191412 - Interconnection structures and fabrication method thereof: A method is provided for fabricating an interconnection structure. The method includes providing a semiconductor substrate having certain semiconductor devices inside, a dielectric layer covering the semiconductor devices, and vias inside the dielectric layer connecting with connection pads of the semiconductor devices. The method also includes forming a first conductive... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20140191413 - Method for producing a semiconductor device comprising a conductor layer in the semiconductor body and semiconductor body: A cutout (11), which penetrates the semiconductor body, is present in the semiconductor body (1). A conductor layer (6), which is electrically conductively connected to a metal plane (3) on or over the semiconductor body, screens the semiconductor body electrically from the cutout. The conductor layer can be metal, optionally... Agent: Ams Ag

20140191415 - Methods for etching through-wafer vias in a wafer: Apparatus and methods for plasma etching are disclosed. In one embodiment, a method for etching a plurality of features on a wafer includes positioning the wafer within a chamber of a plasma etcher, generating plasma ions using a radio frequency power source and a plasma source gas, directing the plasma... Agent: Skyworks Solutions, Inc.

20140191416 - Semiconductor device: A semiconductor device comprises a first external terminal having a first size, a plurality of second external terminals each having a second size smaller than the first size, an external terminal area in which the first external terminal and the second external terminals are arranged, and a plurality of wires... Agent: Elpida Memory, Inc.

20140191414 - Semiconductor device and method for fabricating the same: A semiconductor device and a method for fabricating the same are provided. The semiconductor device comprising a substrate including a first surface and a second surface that face each other, a planarization layer formed on the first surface of the substrate, a passivation layer formed on the planarization layer, and... Agent:

20140191419 - 3d integrated circuit package with window interposer: 3D integrated circuit packages with window interposers and methods to form such semiconductor packages are described. For example, a semiconductor package includes a substrate. A top semiconductor die is disposed above the substrate. An interposer having a window is disposed between and interconnected to the substrate and the top semiconductor... Agent: Intel Corporation

20140191418 - Metal to metal bonding for stacked (3d) integrated circuits: The present invention provides a stabilized fine textured metal microstructure that constitutes a durable activated surface usable for bonding a 3D stacked chip. A fine-grain layer that resists self anneal enables metal to metal bonding at moderate time and temperature and wider process flexibility.... Agent: International Business Machines Corporation

20140191417 - Multi-chip package assembly with improved bond wire separation: A multi-chip package is disclosed that has a construction capable of preventing and/or reducing electrical shorts caused by shifts in bond wires. The multi-chip package includes a die attach formed between connection points of a bond wire. The die attach is made of a non-conductive material and can be constructed... Agent: Spansion LLC

20140191420 - Embedded package in pcb build up: An apparatus including a printed circuit board including a body of a plurality of alternating layers of conductive material and insulating material; and a package including a die disposed within the body of the printed circuit board. A method including forming a printed circuit board including a core and a... Agent:

20140191421 - Semiconductor device: A semiconductor device includes a semiconductor substrate, an interlayer insulation film, multiple wiring layers, a first hard film, and an electrical pad. The semiconductor substrate has a semiconductor element. The interlayer insulation film is disposed above the semiconductor substrate. The multiple wiring layers are disposed within the interlayer insulation film.... Agent: Denso Corporation

  
  
  
Previous industry: Fences
Next industry: Railway mail delivery


######

RSS FEED for 20140710: xml
Integrate FreshPatents.com into your RSS reader/aggregator or website to track weekly updates.
For more info, read this article.

######

Thank you for viewing Active solid-state devices (e.g., transistors, solid-state diodes) patents on the FreshPatents.com website. These are patent applications which have been filed in the United States. There are a variety ways to browse Active solid-state devices (e.g., transistors, solid-state diodes) patent applications on our website including browsing by date, agent, inventor, and industry. If you are interested in receiving occasional emails regarding Active solid-state devices (e.g., transistors, solid-state diodes) patents we recommend signing up for free keyword monitoring by email.



Results in 1.02316 seconds

PATENT INFO