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Active solid-state devices (e.g., transistors, solid-state diodes) March listing by industry category 03/13

20130075683 - Integrated nonvolatile resistive memory elements: A resistive memory apparatus provides resistive memory material between conductive traces on a substrate or in a film stack on a substrate. The resistive memory apparatus may provide a sealed cavity or may utilize material obviating the need for the cavity. Methods and materials utilized to form the resistive memory... Agent:

20130075684 - Non-volatile memory device: A non-volatile memory device includes: a first line extending along a main surface of a substrate; a stack provided above the first line; a second line formed above the stack; a select element provided where the first and second lines intersect, the select element adapted to pass current in a... Agent: Hitachi, Ltd.

20130075682 - Phase change random access memory and method for manufacturing the same: A phase change random access memory includes a semiconductor substrate having a bottom electrode formed over the semiconductor substrate; and a phase change layer formed over the bottom electrode. The phase change layer a first phase change layer formed over the bottom electrode and including at least one of a... Agent:

20130075685 - Methods and apparatus for including an air gap in carbon-based memory devices: In some aspects, a reversible resistance-switching metal-insulator-metal stack is provided that includes a first conducting layer, a carbon nano-tube (“CNT”) material above the first conducting layer, a second conducting layer above the CNT material, and an air gap between the first conducting layer and the CNT material. Numerous other aspects... Agent:

20130075687 - Method for manufacturing nonvolatile semiconductor storage device and nonvolatile semiconductor storage device: A method for manufacturing a nonvolatile semiconductor storage device according to an embodiment includes laminating a first wire extending in a first direction, and a film made into a variable resistance element made of a metallic material, which are laminated in order on a semiconductor substrate, dividing, into a plurality... Agent: Kabushiki Kaisha Toshiba

20130075688 - Semiconductor memory device and manufacturing method thereof: A semiconductor memory device includes a first insulating portion. The semiconductor memory device further includes a phase-change material element that contacts the first insulating portion. The semiconductor memory device further includes an electrode that contacts a side surface of the phase-change material element, the side surface of the phase-change material... Agent: Semiconductor Manufacturing International Corporation

20130075686 - Variable resistance memory: A variable resistance memory according to the present embodiment includes a memory cell including an ion source electrode including metal atoms, an opposite electrode, an amorphous silicon film formed between the ion source electrode and the opposite electrode, and a polysilicon film formed between the amorphous silicon film and the... Agent: Kabushiki Kaisha Toshiba

20130075689 - Stackable non-volatile resistive switching memory device and method: A memory device includes a first plurality of memory cells arranged in a first crossbar array, a first thickness of dielectric material overlying the first plurality of memory cells, and a second plurality of memory cells arranged in a second crossbar array overlying the first thickness of dielectric material. The... Agent: Crossbar Inc.

20130075690 - Ammonia nanosensors, and environmental control system: Embodiments of nanoelectronic sensors are described, including sensors for detecting analytes such ammonia. An environmental control system employing nanoelectronic sensors is described. A personnel safety system configured as a disposable badge employing nanoelectronic sensors is described. A method of dynamic sampling and exposure of a sensor providing a number of... Agent: Nanomix, Inc.

20130075693 - Coalesced nanowire structures with interstitial voids and method for manufacturing the same: A semiconductor device, such as an LED, includes a plurality of first conductivity type semiconductor nanowire cores located over a support, a continuous second conductivity type semiconductor layer extending over and around the cores, a plurality of interstitial voids located in the second conductivity type semiconductor layer and extending between... Agent: Glo Ab

20130075691 - Deep ultraviolet light emitting diode: A carbon doped short period superlattice is provided. A heterostructure includes a short period superlattice comprising a plurality of quantum wells alternating with a plurality of barriers. One or more of the quantum wells and/or the barriers includes a percolated carbon atomic plane.... Agent: Sensor Electronic Technology, Inc.

20130075695 - Light emitting device and light emitting device package: A light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system are disclosed. The light emitting device may include a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first and second conductive semiconductor layers.... Agent: Lg Innotek Co., Ltd

20130075696 - Light-emitting element with multiple light-emtting stacked layers: A light-emitting device includes a first light-emitting element emitting a first light with a first dominant wavelength including a first MQW structure including a first number of MQW pairs; a second MQW structure on the first MQW structure, including a second number of MQW pairs; and a tunneling layer between... Agent: Epistar Corporation

20130075692 - Semiconductor nanoparticle-based light emitting materials: A light emitting layer including a plurality of light emitting particles embedded within a host matrix material. Each of said light emitting particles includes a population of semiconductor nanoparticles embedded within a polymeric encapsulation medium. A method of fabricating a light emitting layer comprising a plurality of light emitting particles... Agent: Nanoco Technologies Ltd.

20130075694 - Strain-controlled atomic layer epitaxy, quantum wells and superlattices prepared thereby and uses thereof: Processes for forming quantum well structures which are characterized by controllable nitride content are provided, as well as superlattice structures, optical devices and optical communication systems based thereon.... Agent: Technion Research & Development Foundation Ltd.

20130075697 - Ultraviolet irradiation apparatus: o

20130075698 - Semiconductor device: A semiconductor device includes a first semiconductor layer provided over a substrate; an electron transit layer contacting a top of the first semiconductor layer; and a second semiconductor layer contacting a top of the electron transit layer, wherein the electron transit layer has a dual quantum well layer having a... Agent: Fujitsu Limited

20130075699 - Nano-structure arrays for emr imaging: An electro-magnetic radiation detector is described. The electro-magnetic radiation detector includes a detector material and a voltage biasing element. The detector material includes a substantially regular array of nano-particles embedded in a matrix material. The voltage biasing element is configured to apply a bias voltage to the matrix material such... Agent: Rockwell Collins, Inc.

20130075700 - Electrode structure including graphene and field effect transistor having the same: According to example embodiments, an electrode structure includes a graphene layer on a semiconductor layer and an electrode containing metal on the graphene layer. A field effect transistor (FET) may include the electrode structure.... Agent: Samsung Electronics Co., Ltd.

20130075703 - Peptide nanostructures encapsulating a foreign material and method of manufacturing same: A composition comprising a material at least partially enclosed by a tubular, spherical or planar nanostructure composed of a plurality of peptides, wherein each of the plurality of peptides includes no more than 4 amino acids and whereas at least one of the 4 amino acids is an aromatic amino... Agent: Ramot At Tel-aviv University Ltd.

20130075701 - Programmable array of silicon nanowire field effect transistor and method for fabricating the same: The present invention discloses a hexagonal programmable array based on a silicon nanowire field effect transistor and a method for fabricating the same. The array includes a nanowire device, a nanowire device connection region and a gate connection region, wherein, the nanowire device has a cylinder shape, and includes a... Agent: Peking University

20130075702 - Tunable hot-electron transfer within a nanostructure: Provided are multimaterial devices, such as coaxial nanowires, that effect hot photoexcited electron transfer across the interface of the materials. Modulation of the transfer rates, manifested as a large tunability of the voltage onset of negative differential resistance and of voltage-current phase, may be effected by modulating electrostatic gating, incident... Agent:

20130075705 - Carbazole compound, light-emitting element material, and organic semiconductor material: A carbazole compound which can be used for a transport layer or as a host material or a light-emitting material of a light-emitting element is provided. Specifically, a carbazole compound which makes it possible to obtain a light-emitting element having good characteristics when used in a light-emitting element emitting blue... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130075715 - Compound having acridan ring structure, and organic electroluminescent device: An organic compound with characteristics excelling in hole-injecting/transporting performance and having an electron blocking ability, a highly stable thin-film state, and excellent heat resistance is provided as material for an organic electroluminescent device of high efficiency and high durability, and the organic electroluminescent device of high efficiency and high durability... Agent: Hodogaya Chemical Co., Ltd.

20130075704 - Heterocyclic compound, light-emitting element, light-emitting device, electronic device, lighting device, and organic compound: Provided is a novel heterocyclic compound which can be used in a light-emitting layer of a light-emitting element as a host material in which a light-emitting material is dispersed, i.e., a heterocyclic compound represented by a general formula (G1). Any one of R1 to R10 represents a substituent represented by... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130075708 - Light emitting device: The present invention provides a light emitting device 11 that includes a support substrate 13, partition walls 12 provided on the support substrate 13 and defining sections set on the support substrate 13, and a plurality of organic electroluminescent (EL) elements 14 provided on the sections defined by the partition... Agent: Sumitomo Chemical Company, Limited

20130075709 - Light emitting device and electronic equipment: A display device capable of keeping the luminance constant irrespective of temperature change is provided as well as a method of driving the display device. A current mirror circuit composed of transistors is placed in each pixel. A first transistor and a second transistor of the current mirror circuit are... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130075712 - Light-emitting device: A light-emitting device includes a first electrode area on a substrate and a functional light-emitting layer on the first electrode area. A second electrode area is disposed on the functional light-emitting layer. A light outlet layer is disposed in a radiation path of the functional light-emitting layer. The light outlet... Agent: Osram Opto Semiconductors Gmbh

20130075707 - Light-emitting device and lighting apparatus: The light output surface structure layer has a concavo-convex structure on a surface opposite to the organic EL element. The concavo-convex structure includes flat surface portions parallel to one surface of the organic EL element and an inclined surface portion tilted relative to the flat surface portions. The projected area... Agent: Zeon Corporation

20130075713 - Light-emitting element, light-emitting device, and electronic device: A light-emitting element disclosed in the present invention includes a light-emitting layer and a first layer between a first electrode and a second electrode, in which the first layer is provided between the light-emitting layer and the first electrode. The present invention is characterized by the device structure in which... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130075710 - Organic electro-luminescence display device and manufacturing method thereof: An OLED device is disclosed. The OLED device includes a first substrate including a driver element and a connection electrode connected to the driver element, a second substrate including an organic light emission diode element, a contact spacer electrically connected to the connection electrode, and a sealant disposed into a... Agent: Lg Display Co., Ltd.

20130075716 - Organic electroluminescence element: An organic electroluminescence device (1) includes: an anode (3); a cathode (4); and an emitting layer (5) provided between the anode (3) and the cathode (4). The emitting layer contains a first host, a second host and a phosphorescent dopant. A triplet energy of each of the first host and... Agent: Idemitsu Losan Co Ltd

20130075714 - Polymer, polymer composition and organic light-emitting device: Light-emitting composition comprising a host polymer and a light emitting dopant wherein the host polymer comprises conjugating repeat units and non-conjugating repeat units in a backbone of the polymer and wherein: the conjugating repeat units provide at least one conjugation path between repeat units linked thereto; and the non-conjugating repeat... Agent: Sumtomo Chemical Company Limited

20130075706 - Substituted biaryl compounds for light-emitting devices: Some substituted biaryl ring systems may be useful in light-emitting devices, such as those comprising a light-emitting diode. For example, substituted bipyridinyl or substituted phenylpyridinyl may be useful in these devices. The substituted biaryl ring system may have at least two different substituents, including one on each ring on the... Agent: Nitto Denko Corporation

20130075711 - Thin-film semiconductor device for display apparatus, method for manufacturing thin-film semiconductor device for display apparatus, el display panel, and el display apparatus: A thin-film semiconductor device for a display apparatus according to the present disclosure includes: a gate electrode above a substrate; a gate insulating film above the gate electrode; a semiconductor layer above the gate electrode; a first electrode above the semiconductor layer; a second electrode in a same layer as... Agent: Panasonic Corporation

20130075720 - Oxide semiconductor, thin film transistor including the same, and thin film transistor array panel including the same: An oxide semiconductor includes a first material including at least one selected from the group consisting of zinc (Zn) and tin (Sn), and a second material, where a value acquired by subtracting an electronegativity difference value between the second material and oxygen (O) from the electronegativity difference value between the... Agent: Samsung Display Co., Ltd.

20130075721 - Semiconductor device: Provided is a semiconductor device including a transistor with large on-state current even when it is miniaturized. The transistor includes a pair of first conductive films over an insulating surface; a semiconductor film over the pair of first conductive films; a pair of second conductive films, with one of the... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130075722 - Semiconductor device: A highly reliable structure for high-speed response and high-speed driving of a semiconductor device, in which on-state characteristics of a transistor are increased is provided. In the coplanar transistor, an oxide semiconductor layer, a source and drain electrode layers including a stack of a first conductive layer and a second... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130075723 - Semiconductor device, display device, and electronic appliance: In a channel protected thin film transistor in which a channel formation region is formed using an oxide semiconductor, an oxide semiconductor layer which is dehydrated or dehydrogenated by a heat treatment is used as an active layer, a crystal region including nanocrystals is included in a superficial portion in... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130075718 - Thin film doped zno neutron detector: A neutron detector having a scintillator layer comprising a thin film of doped zinc oxide is disclosed. The use of doped zinc oxide in such applications provides appliances and detectors that are rugged, tolerant to shocks and temperature variations, non-hygoroscopic, and suitable for outdoor applications.... Agent:

20130075717 - Thin film transistor: A thin film transistor for a semiconductor device is disclosed. The thin film transistor comprises a substrate; a channel region formed on the substrate, the channel region being made of a first oxide semiconductor material; a source region and a drain region formed on each of lateral sides of the... Agent: Hon Hai Precision Industry Co., Ltd.

20130075719 - Thin film transistor, method for manufacturing same, and display device: According to one embodiment, a thin film transistor includes a substrate, a gate electrode, a first insulating film, an oxide semiconductor film, a second insulating film, a source electrode, and a drain electrode. The gate electrode is provided on a part of the substrate. The first insulating film covers the... Agent: Kabushiki Kaisha Toshiba

20130075725 - Enhanced wafer test line structure: A semiconductor wafer has a die area and a scribe area. A first dummy pad is formed in a first test line area of the scribe area and filled with a first material as part of a first metal layer. A first interlayer dielectric is formed over the first metal... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130075726 - Protection method for an electronic device and corresponding device: The semiconductor wafer for a silicon-on-insulator integrated circuit comprises an insulating region located between a first semiconductor substrate intended to receive the integrated circuit and a second semiconductor substrate containing at least one buried layer comprising at least one metal silicide.... Agent: Stmicroelectronics (rousset) Sas

20130075724 - Semiconductor arrangement with an integrated hall sensor: A semiconductor arrangement includes a semiconductor body and a semiconductor device, the semiconductor device including first and second load terminals arranged distant to each other in a first direction of the semiconductor body and a load path arranged in the semiconductor body between the first and second load terminals. The... Agent: Infineon Technologies Austria Ag

20130075727 - Semiconductor device: Electrode pads respectively have a probe region permitting probe contact and a non-probe region. In each of the electrode pads arranged zigzag in two or more rows, a lead interconnect for connecting another electrode pad with an internal circuit is not placed directly under the probe region but placed directly... Agent: Panasonic Corporation

20130075728 - Array substrate and display apparatus using the same: An array substrate includes scan lines and data lines defining pixel structures. Each pixel structure includes a first TFT, a second TFT and a pixel electrode. The first TFT includes a first gate connected to the scan line, a first source disposed above and partially overlapping the first gate, and... Agent: E Ink Holdings Inc.

20130075729 - Fin-based bipolar junction transistor and method for fabrication: According to one exemplary embodiment, a fin-based bipolar junction transistor (BJT) includes a wide collector situated in a semiconductor substrate. A fin base is disposed over the wide collector. Further, a fin emitter and an epi emitter are disposed over the fin base. A narrow base-emitter junction of the fin-based... Agent: Broadcom Corporation

20130075730 - Vertical pnp device in a silicon-germanium bicmos process and manufacturing method thereof: A vertical PNP device in a silicon-germanium (SiGe) BiCMOS process is disclosed. The device is formed in a deep N-well and includes a collector region, a base region and an emitter region. The collector region has a two-dimensional L-shaped structure composed of a lightly doped first P-type ion implantation region... Agent: Shanghai Hua Hong Nec Electronics Co., Ltd.

20130075731 - Manufacturing method for thin film transistor and thin film transistor manufactured by them: Provided are a manufacturing method for a thin film transistor, and a thin film transistor manufactured by the manufacturing method. In the manufacturing method, a semiconductor layer and an insulating layer for stopping etching, which are sequentially stacked, are etched by dry etching and wet etching using a single photoresist... Agent: Snu R&db Foundation

20130075733 - Method for manufacturing semiconductor device and semiconductor device: A minute transistor and the method of manufacturing the minute transistor. A source electrode layer and a drain electrode layer are each formed in a corresponding opening formed in an insulating layer covering a semiconductor layer. The opening of the source electrode layer and the opening of the drain electrode... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130075732 - Semiconductor device and method for manufacturing the same: A miniaturized transistor having high electric characteristics is provided with high yield. In a semiconductor device including the transistor, high performance, high reliability, and high productivity are achieved. In a semiconductor device including a transistor in which an oxide semiconductor film, a gate insulating film, and a gate electrode layer... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130075735 - Semiconductor device and method for manufacturing the same: A metal oxide layer is in contact with an interlayer insulating layer covering a transistor, and has a stacked-layer structure including a first metal oxide layer having an amorphous structure and a second metal oxide layer having a polycrystalline structure. In the first metal oxide layer, there are no crystal... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130075734 - Thin film transistor device with accurately aligned electrode patterns: An electronic device comprising an optically transparent substrate, a first electrode structure incorporating a channel, said channel being optically transparent and said electrode structure being optically opaque, at least one intermediate layer, and a photosensitive dielectric layer disposed above the at least one intermediate layer, the photosensitive dielectric layer incorporating... Agent:

20130075738 - Display device and electronic device using the same: A display device with a compensation circuit that applies a fixed potential constantly to a gate electrode of a driving transistor for a certain period is provided. Specifically, each difference voltage value between an anode and a cathode of the light emitting element is utilized in the case where the... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130075737 - Organic light-emitting display apparatus: An organic light-emitting display apparatus having improved durability and image quality may include a substrate; a first electrode formed on the substrate; a first pixel definition layer formed to cover at least one lateral surface of the first electrode; a second pixel definition layer formed so as to be spaced... Agent: Samsung Mobile Display Co., Ltd.

20130075736 - Thin film transistor array panel and manufacturing method thereof: A thin film transistor array panel includes: an substrate; a gate line and a gate pad portion disposed on the substrate; a gate insulating layer disposed on the gate line and the gate pad portion; a data line and a data pad portion disposed on the gate insulating layer; a... Agent:

20130075739 - Method of manufacturing electronic devices on both sides of a carrier substrate and electronic devices thereof: Some embodiments include a method of manufacturing electronic devices on both sides of a carrier substrate and electronic devices thereof. Other embodiments of related methods and structures are also disclosed.... Agent: Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Acting For And On Behalf Of

20130075740 - P-type oxide alloys based on copper oxides, tin oxides, tin-copper alloy oxides and metal alloy thereof, and nickel oxide, with embedded metals thereof, fabrication process and use thereof: The present invention relates to thin films comprising non-stoichiometric monoxides of: copper (OCu2), with embedded cubic metal copper (Cucy) [(OCu2)x+(Cu1-2)y, wherein 0.05≦x<1 and 0.01≦y≦0.9]; of tin (OSn)αx with embedded metal tin (Snβx) [(OSn)z+(Sn1-2)w wherein 0.05≦z<1 and 0.01≦w≦0.9]; Cucx—Snβx alloys with embedded metal Sn and Cu [(O—Cu—Sn)a+(Cuα—Snβ)b with 0<α<2 and 0<β<2,... Agent: Electronic And Telecommunications Research Institu Te

20130075741 - Lateral pnp bipolar transistor formed with multiple epitaxial layers: A lateral bipolar transistor with deep emitter and deep collector regions is formed using multiple epitaxial layers of the same conductivity type. Deep emitter and deep collector regions are formed without the use of trenches. Vertically aligned diffusion regions are formed in each epitaxial layer so that the diffusion regions... Agent: Alpha And Omega Semiconductor Inc.

20130075742 - Nonvolatile semiconductor memory device: According to one embodiment, a nonvolatile semiconductor memory device includes: a stacked body including a plurality of electrode layers and a plurality of insulating layers, which are alternately stacked, and diffusion suppressing layers each provided between each of the plurality of electrode layers and each of the plurality of insulating... Agent: Kabushiki Kaisha Toshiba

20130075743 - Semiconductor device and method of manufacturing semiconductor device: A semiconductor device includes a first device isolation insulating film defining a first region, a first conductive layer of a first conductivity type formed in the first region, a semiconductor layer formed above the semiconductor substrate and including a second conductive layer of the first conductivity type connected to the... Agent: Fujitsu Semiconductor Limited

20130075744 - Display apparatus: Provided is a display apparatus using an organic EL device in which blur in a display image to be a problem for the display apparatus is reduced while propagating light propagating through a high-refractive-index transparent layer is efficiently extracted outside. The display apparatus has a configuration in which a high-refractive-index... Agent: Canon Kabushiki Kaisha

20130075745 - Thin-film semiconductor device, display apparatus, and method for manufacturing thin-film semiconductor device: A thin-film semiconductor device includes: a first gate line; a metal line; a first gate electrode extending from the first gate line; a second gate electrode on the first gate electrode; an insulating layer provided in a crossing area where the first gate line and the metal line cross; and... Agent: Panasonic Corporation

20130075747 - Esd protection using low leakage zener diodes formed with microwave radiation: Semiconductor devices and methods for making such devices are described. These devices contain a semiconductor substrate with a first portion containing an integrated circuit device connected to a gate pad in an upper portion of the substrate and a second portion containing a Zener diode having a ESD rating up... Agent:

20130075746 - Lateral pnp bipolar transistor with narrow trench emitter: A lateral bipolar transistor includes trench emitter and trench collector regions to form ultra-narrow emitter regions, thereby improving emitter efficiency. The same trench process is used to form the emitter/collector trenches as well as the trench isolation structures so that no additional processing steps are needed to form the trench... Agent: Alpha And Omega Semiconductor Inc.

20130075749 - Compound semiconductor device and method of manufacturing the same: An embodiment of a compound semiconductor device includes: a substrate; an electron channel layer and an electron supply layer formed over the substrate; a gate electrode, a source electrode and a drain electrode formed on or above the electron supply layer; a first p-type semiconductor layer formed between the electron... Agent: Fujitsu Limited

20130075751 - Compound semiconductor device and method of manufacturing the same: An embodiment of a compound semiconductor device includes: a substrate; an electron channel layer and an electron supply layer formed over the substrate; a gate electrode, a source electrode and a drain electrode formed on or above the electron supply layer; a p-type semiconductor layer formed between the electron supply... Agent: Fujitsu Limited

20130075755 - Light emitting device and manufacturing method thereof: Provided are a light emitting device and a manufacturing method thereof. The light emitting device comprises a first conductive semiconductor layer with a lower surface being uneven in height, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer.... Agent: Lg Innotek Co., Ltd.

20130075748 - Method and system for diffusion and implantation in gallium nitride based devices: A method of forming a doped region in a III-nitride substrate includes providing the III-nitride substrate and forming a masking layer having a predetermined pattern and coupled to a portion of the III-nitride substrate. The III-nitride substrate is characterized by a first conductivity type and the predetermined pattern defines exposed... Agent: Epowersoft, Inc.

20130075750 - Semiconductor device: A semiconductor device includes a first semiconductor layer formed on a substrate; a second semiconductor layer formed on the first semiconductor layer; a third semiconductor layer formed on the second semiconductor layer; a gate electrode formed on the third semiconductor layer; and a source electrode and a drain electrode formed... Agent: Fujitsu Limited

20130075753 - Semiconductor device: A semiconductor device includes: a substrate comprised of gallium nitride; an active layer provided on the substrate; a first buffer layer that is provided between the substrate and the active layer and is comprised of indium aluminum nitride (InxAl1−xN, 0.15≦x≦0.2); and a spacer layer that is provided between the first... Agent: Sumitomo Electric Industries, Ltd.

20130075752 - Semiconductor device and method of manufacturing the same: A semiconductor device includes: a first semiconductor layer formed on a substrate; a second semiconductor layer formed on the first semiconductor layer; a third semiconductor layer formed on the second semiconductor layer; a gate electrode formed on the third semiconductor layer; and a source electrode and a drain electrode formed... Agent: Fujitsu Limited

20130075754 - Semiconductor device, fabrication method of the semiconductor devices: In a semiconductor device, a YAG substrate is formed as a single-crystal substrate of any of surface orientations (100), (110), and (111). In the fabrication of the semiconductor device, a TMAl gas is first fed onto the YAG substrate so as to form a nucleation layer made of aluminum, which... Agent: Koito Manufacturing Co., Ltd.

20130075758 - Semiconductor device and method for manufacturing semiconductor device: A MOSFET includes a semiconductor substrate having a trench formed in a main surface, a gate oxide film, a gate electrode, and a source interconnection. A semiconductor substrate includes an n-type drift layer and a p-type body layer. The trench is formed to penetrate the body layer and to reach... Agent: Sumitomo Electric Industries, Ltd.

20130075760 - Semiconductor device and method for manufacturing semiconductor device: The present application relates to technology for improving a withstand voltage of a semiconductor device. The semiconductor device includes a termination area that surrounds a cell area. The cell area is provided with a plurality of main trenches. The termination area is provided with one or more termination trenches surrounding... Agent: Toyota Jidosha Kabushiki Kaisha

20130075757 - Semiconductor device and method for manufacturing the same: A semiconductor device according to the present embodiment includes a diamond substrate having a surface plane inclined from a (100) plane in a range of 10 degrees to 40 degrees in a direction of <011> ±10 degrees, and an n-type diamond semiconductor layer containing phosphorus (P) and formed above the... Agent: Kabushiki Kaisha Toshiba

20130075756 - Semiconductor device and method for reduced bias threshold instability: According to one embodiment, a semiconductor device, having a semiconductor substrate comprising silicon carbide with a gate electrode disposed on a portion of the substrate on a first surface with, a drain electrode disposed on a second surface of the substrate. There is a dielectric layer disposed on the gate... Agent: General Electric Company

20130075759 - Silicon carbide semiconductor device: A first layer has n type conductivity. A second layer is epitaxially formed on the first layer and having p type conductivity. A third layer is on the second layer and having n type conductivity. ND is defined to represent a concentration of a donor type impurity. NA is defined... Agent: Sumitomo Electric Industries, Ltd.

20130075761 - Photoelectric conversion device and manufacturing method thereof: According to one embodiment, a photoelectric conversion device including a substrate having opaque interconnection layers, an insulating film formed on the substrate, and having a plurality of openings, light-emitting elements formed of the openings, each light-emitting element having an upper electrode layer, and light-receiving elements formed of the openings, each... Agent:

20130075763 - Display apparatus and method of manufacturing touch substrate: A display apparatus includes a first substrate including a plurality of pixels, and a second substrate facing the first substrate, the second substrate comprising a sensor area and a peripheral area, the sensor area comprising a plurality of sensors. The second substrate includes an insulating layer, and a plurality of... Agent: Samsung Display Co., Ltd.

20130075762 - Optically transmissive metal electrode, electronic device, and optical device: According to one embodiment, an optically transmissive metal electrode includes a plurality of first and second metal wires. The first metal wires are disposed along a first direction, and extend along a second direction intersecting the first direction. The second metal wires are disposed along a third direction parallel with... Agent:

20130075765 - Infrared light-emitting diode and touch screen: This invention discloses an infrared light-emitting diode. The infrared light-emitting diode comprises: only one core for emitting infrared light; a packaging body which at least comprises a first surface that is convex and in front of the core and a second surface that is plane and on one side of... Agent:

20130075764 - Optical module package structure: An optical module package structure includes a light-emitting chip and a light sensor chip respectively installed in a first cavity and a second cavity in a substrate, a reflective layer coated on the periphery of the first cavity, two packaging adhesive structures respectively molded in the first cavity and the... Agent:

20130075767 - Light emitting device and manufacturing method of the same: The light emitting device 10 comprises a mounting substrate 11, LED chips 20 flip-chip bonded on the mounting substrate 11, and a glass sealing member 30 made of a plate-shaped glass material that seals the LED chips 20 formed on the mounting substrate 11. Here, the glass sealing member 30... Agent: Toyoda Gosei Co., Ltd.

20130075768 - Organic light emitting diode display device and method of fabricating the same: In an organic light emitting diode (OLED) display device and a method for fabricating the same, OLED pixels are patterned through a photolithography process, so a large area patterning can be performed and a fine pitch can be obtained, and an organic compound layer can be protected by forming a... Agent: Lg Display Co., Ltd.

20130075766 - Thin film transistor device and pixel structure and driving circuit of a display panel: A thin film transistor device, disposed on a substrate, includes a gate electrode, a semiconductor channel layer, a gate insulating layer disposed between the gate electrode and the semiconductor channel layer, a source electrode and a drain electrode disposed at two opposite sides of the semiconductor channel layer and partially... Agent:

20130075769 - Selection of phosphors and leds in a multi-chip emitter for a single white color bin: An emitter for an LED-based lighting device has multiple groups of LEDs that are independently addressable, allowing the emitter to be tuned to a desired color bin (e.g., a specific white color) by adjusting the relative current supplied to different groups. The LED dies for the groups and a phosphor... Agent: Ledengin, Inc.

20130075770 - Method and system for epitaxy processes on miscut bulk substrates: A method for providing (Al,Ga,In)N thin films on Ga-face c-plane (Al,Ga,In)N substrates using c-plane surfaces with a miscut greater than at least 0.35 degrees toward the m-direction. Light emitting devices are formed on the smooth (Al,Ga,In)N thin films. Devices fabricated on the smooth surfaces exhibit improved performance.... Agent: Soraa, Inc.

20130075771 - Semiconductor light emitting device: According to one embodiment, a semiconductor light emitting device includes first and second electrode layers, a and second semiconductor layers, a light emitting layer and a first intermediate layer. The first electrode layer has a metal portion having through-holes. The second electrode layer is stacked with the first electrode layer... Agent:

20130075774 - Light converting and emitting device with minimal edge recombination: Light emitting system (100), particularly, light emitting systems that utilize semiconductor wavelength converting regions (104), and methods of producing such systems are disclosed. The light emitting systems and methods of producing such systems seek to frustrate recombination of free carriers that are associated with wavelength converting regions.... Agent: 3m Innovative Properties Company

20130075776 - Light distribution controller, light-emitting device using the same, and method for fabricating light distribution controller: A light distribution controller of a light-emitting device includes a first optical member formed of ZnO disposed over an LED interposing a transparent adhesive, and a second optical member which covers the first optical member. The first optical member includes a first concave portion having an opening in a regular... Agent: Panasonic Corporation

20130075773 - Light emitting device: The above object was achieved by a light emitting device comprising a semiconductor light emitting element and a phosphor layer wherein the phosphor layer was made dense by setting specific values for particle distribution of phosphor contained in the phosphor layer and for the packing ratio of the phosphor contained... Agent:

20130075772 - Light-emitting device and method of manufacturing the same: Provided is a light-emitting device including (a) a layer structure obtained by sequentially growing on a base substrate a first compound semiconductor layer of a first conductivity type, (b) an active layer formed of a compound semiconductor, and (c) a second compound semiconductor layer of a second conductivity type; a... Agent: Sony Corporation

20130075775 - Multicolored light converting led with minimal absorption: Light emitting systems are disclosed. More particularly light emitting systems that utilize wavelength converting semiconductor layer stacks, and preferred amounts of potential well types in such stacks to achieve more optimal performance are disclosed... Agent: 3m Innovative Properties Company

20130075781 - Led with honeycomb radiating heat dissipation device: An LED with a honeycomb radiating heat dissipation device includes a sapphire substrate, an LED epitaxy layer on the sapphire substrate, a thermally conductive binding layer, an intermediate heat dissipation layer, a base substrate and a honeycomb-like heat dissipation device. The thermally conductive binding layer is provided to bind the... Agent: Jingdezhen Fared Technology Co., Ltd.

20130075779 - Light emitting diode with multiple transparent conductive layers and method for manufacturing the same: A light emitting diode includes a first-type semiconductor layer, an active layer, a second-type semiconductor layer and a transparent, electrically conductive layer formed in sequence. The transparent, electrically conductive layer includes a first transparent, electrically conductive layer on the second-type semiconductor layer and a second transparent, electrically conductive layer on... Agent: Advanced Optoelectronic Technology, Inc.

20130075778 - Light-transmitting metal electrode, electronic apparatus and light emitting device: According to one embodiment, a light-transmitting metal electrode includes a metal layer. The metal layer is provided on a major surface of a member and includes a metal nanowire and a plurality of openings formed with the metal nanowire. The thin layer includes a plurality of first straight line parts... Agent:

20130075777 - Opto-electric device and method for manufacturing the same: the device having an open, electrically interconnected conductive structure (10) that is embedded within the first barrier layer structure (20), that comprises at least one elongated element (12a, 12b, 12c) of a metal that laterally extends within the barrier layer structure (20), and that is arranged against the functional layer... Agent: Nederlandse Organisatie Voor Toege-past-natuurwete Nschappelijk Onderzoek Tno

20130075780 - Radiation heat dissipation led structure and the manufacturing method thereof: Disclosed are a radiation heat dissipation LED structure and a manufacturing method thereof. The radiation heat dissipation LED structure includes a sapphire substrate, an LED epitaxy layer, a base substrate, a radiation heat dissipation film, and a thermally conductive binding layer provided between the sapphire substrate and the radiation heat... Agent: Jingdezhen Fared Technology Co., Ltd.

20130075782 - Light emitting element, light emitting device, and electronic device: An object is to improve luminous efficiency of a light emitting element using triplet exciton energy effectively. Another object is to reduce power consumption of a light emitting element, a light emitting device, and an electronic device. Triplet exciton energy generated in a light emitting layer which exhibits short wavelength... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130075783 - Semiconductor device and method for manufacturing the same: A semiconductor device includes: a semiconductor substrate, the semiconductor substrate comprising; an n type drift layer, a p type body layer on an upper surface side of the drift layer, and a high impurity n layer on a lower surface side of the drift layer. The high impurity n layer... Agent: Toyota Jidosha Kabushiki Kaisha

20130075784 - Semiconductor device and method for manufacturing the same: A semiconductor device including a semiconductor substrate in which a diode region and an IGBT region are formed is provided. The diode region includes a first layer embedded in a diode trench reaching a diode drift layer from an upper surface side of the semiconductor substrate, and a second layer... Agent: Toyota Jidosha Kabushiki Kaisha

20130075787 - Compound semiconductor device and method of manufacturing the same: An embodiment of a compound semiconductor device includes: a substrate; a compound semiconductor stacked structure formed over the substrate; and a gate electrode, a source electrode and a drain electrode formed on or above the compound semiconductor stacked structure. The compound semiconductor stacked structure includes: an electron channel layer; and... Agent: Fujitsu Limited

20130075786 - Semiconductor device: A semiconductor device including a high resistance layer formed on a substrate, the high resistance layer being formed with a semiconductor material doped with an impurity element that makes the semiconductor material highly resistant; a multilayer intermediate layer formed on the high resistance layer; an electron transit layer formed with... Agent: Fujitsu Limited

20130075785 - Semiconductor device and fabrication method: A semiconductor device includes a first semiconductor layer formed on a substrate, the first semiconductor containing an impurity element; a second semiconductor layer formed on the first semiconductor layer; a third semiconductor layer formed on the second semiconductor layer; and a gate electrode, a source electrode and a drain electrode... Agent: Fujitsu Limited

20130075788 - Semiconductor device and fabrication method: A method for fabricating a semiconductor device is disclosed. The method includes sequentially forming a first semiconductor layer, a second semiconductor layer and a semiconductor cap layer containing a p-type impurity element on a substrate, forming a dielectric layer having an opening after the forming of the semiconductor cap layer,... Agent: Fujitsu Limited

20130075789 - Semiconductor device and method for manufacturing semiconductor device: A semiconductor device, comprising: a first semiconductor layer disposed on a substrate; a second semiconductor layer disposed on the first semiconductor layer; a lower insulating film disposed on the second semiconductor layer; a p-type electroconductive oxide film disposed on the lower insulating film; an upper insulating film disposed on the... Agent: Fujitsu Limited

20130075790 - Semiconductor including lateral hemt: A semiconductor including a lateral HEMT and to a method for production of a lateral HEMT is disclosed. In one embodiment, the lateral HEMT has a substrate and a first layer, wherein the first layer has a semiconductor material of a first conduction type and is arranged at least partially... Agent: Infineon Technologies Austria Ag

20130075791 - Depleted charge-multiplying ccd image sensor: In various embodiments, a charge-coupled device includes channel stops laterally spaced away from the channel by fully depleted regions.... Agent:

20130075792 - Metal-strapped ccd image sensors: In various embodiments, image sensors include strapping grids of vertical and horizontal strapping lines conducting phase-control signals to underlying gate conductors that control transfer of charge within the image sensor.... Agent:

20130075793 - Field effect transistor type biosensor: Provided is a biosensor that makes it possible to detect the electrical properties of a bio-related material contained in an analyte fluid such as an aqueous solution placed on a sensitive membrane and to observe the bio-related material at a high magnification with an observation device such as a microscope.... Agent: Dai Nippon Printing Co., Ltd.

20130075794 - Nano-electronic sensors for chemical and biological analytes, including capacitance and bio-membrane devices: Embodiments of nanoelectronic sensors are described, including sensors for detecting analytes inorganic gases, organic vapors, biomolecules, viruses and the like. A number of embodiments of capacitive sensors having alternative architectures are described. Particular examples include integrated cell membranes and membrane-like structures in nanoelectronic sensors.... Agent:

20130075795 - Aerogel dielectric layer: A circuit board assembly includes a circuit board, a chip attached to the circuit board and a dielectric layer. The chip has a circuit facing the circuit board and spaced from it. The dielectric layer includes an aerogel. In one embodiment, the aerogel has a dielectric constant of approximately 2.0... Agent:

20130075796 - Semiconductor device and fabrication method thereof: A method of fabricating a semiconductor device is disclosed. A dummy gate feature is formed between two active gate features over a substrate. An isolation structure is in the substrate and the dummy gate feature is over the isolation structure. In at least one embodiment, a non-conductive material is used... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130075797 - Semiconductor device and method of manufacturing the same: In one embodiment, a semiconductor device includes a semiconductor substrate, and a fin disposed on a surface of the semiconductor substrate and having a side surface of a (110) plane. The device further includes a gate insulator disposed on the side surface of the fin, and a gate electrode disposed... Agent: Kabushiki Kaisha Toshiba

20130075799 - Electro-optical device and electronic apparatus: Disclosed is a pixel electrode which is electrically connected to a scanning line electrically connected to a gate electrode, a data line electrically connected to a data line side source and drain region, and a pixel electrode side source and drain region; and a capacitance element which has a first... Agent: Seiko Epson Corporation

20130075798 - Semiconductor device: A semiconductor device comprises: a MOS transistor connected between a power supply terminal and a ground terminal; a first diode connected between a drain and a gate of the MOS transistor; a second diode connected between the drain and the gate of the MOS transistor, in series with the first... Agent: Kabushiki Kaisha Toshiba

20130075800 - Semiconductor device manufacturing method, semiconductor device and substrate processing apparatus: A semiconductor device manufacturing method includes loading a substrate to a processing chamber, a gate insulating film or a capacitor insulating film being formed on a surface of the substrate; forming an electrode, which includes a conductive oxide film and to which an additive that modulates a work function of... Agent: Hitachi Kokusai Electric Inc.

20130075801 - Self-adjusted capacitive structure: A method for producing a capacitive structure in a semiconductor body includes forming a first trench in a first surface of the semiconductor body, forming a first dielectric layer on sidewalls and the bottom of the first trench, forming a first electrode layer on the first dielectric layer, forming at... Agent: Infineon Technologies Austria Ag

20130075802 - Contact architecture for 3d memory array: A vertical interconnect architecture for a three-dimensional (3D) memory device suitable for low cost, high yield manufacturing is described. Conductive lines (e.g. word lines) for the 3D memory array, and contact pads for vertical connectors used for couple the array to decoding circuitry and the like, are formed as parts... Agent: Macronix International Co., Ltd.

20130075803 - Flash-to-rom conversion: Flash-to-ROM conversion is performed by converting single transistor flash memory cells to single transistor ROM cells. An S-Flash memory cell is converted to a programmed ROM cell by introducing a threshold voltage implant into the channel region of the S-Flash memory cell. Alternately, an S-Flash memory cell is converted to... Agent: Tower Semiconductor Ltd.

20130075804 - High density semiconductor memory device and method for manufacturing the same: Provided are a high density semiconductor memory device capable of precisely reading data by suppressing the occurrence of a leakage current due to the high-integration of the semiconductor memory device, and a method for manufacturing the semiconductor memory device. The high density semiconductor memory device includes: source and drain electrodes... Agent: Electronics And Telecommunications Research Institute

20130075805 - Method for manufacturing nonvolatile semiconductor storage device and nonvolatile semiconductor storage device: According to one embodiment, a method for manufacturing a nonvolatile semiconductor storage device includes; forming a first and a second stacked bodies; forming a through hole penetrating through the first stacked body, a second portion communicating with the first portion and penetrating through a select gate, and a third portion... Agent: Kabushiki Kaisha Toshiba

20130075806 - Multi-gate bandgap engineered memory: Memory cells comprising: a semiconductor substrate having a source region and a drain region disposed below a surface of the substrate and separated by a channel region; a tunnel dielectric structure disposed above the channel region, the tunnel dielectric structure comprising at least one layer having a hole-tunneling barrier height;... Agent:

20130075807 - Semiconductor memory devices having selection transistors with nonuniform threshold voltage characteristics: Provided is a semiconductor memory device. In the semiconductor memory device, a lower selection gate controls a first channel region that is defined at a semiconductor substrate and a second channel region that is defined at the lower portion of an active pattern disposed on the semiconductor substrate. The first... Agent:

20130075809 - Semiconductor power device with embedded diodes and resistors using reduced mask processes: A trench semiconductor power device integrated with a Gate-Source and a Gate-Drain clamp diodes without using source mask is disclosed, wherein a plurality source regions of a first conductivity type of the trench semiconductor device and multiple doped regions of the first conductivity type of the clamp diodes are formed... Agent: Force Mos Technology Co. Ltd.

20130075810 - Semiconductor power devices integrated with a trenched clamp diode: A semiconductor power device having shielded gate structure integrated with a trenched clamp diode formed in a semiconductor silicon layer, wherein the shielded gate structure comprises a shielded electrode formed by a first poly-silicon layer and a gate electrode formed by a second poly-silicon layer. The trenched clamp diode is... Agent: Force Mos Technology Co., Ltd.

20130075808 - Trench mosfet with integrated schottky barrier diode: A Schottky diode includes a semiconductor layer formed on a semiconductor substrate; first and second trenches formed in the semiconductor layer where the first and second trenches are lined with a thin dielectric layer and being filled partially with a trench conductor layer and remaining portions of the first and... Agent: Alpha And Omega Semiconductor Inc.

20130075811 - Double gate transistor and method of fabricating the same: The present invention discloses a double gate transistor and a method of fabricating said transistor, said transistor comprising: a semiconductor layer on a substrate; a fin structure formed in said semiconductor layer, said fin structure having two end portions for forming source and drain regions and a middle portion between... Agent: Semiconductor Manufacturing International (beijing) Corporation

20130075813 - Semiconductor device: A method of forming a semiconductor device includes the following processes. A first semiconductor structure is formed, which extends upwardly in a direction perpendicular to a main surface from a surface of a semiconductor substrate. A first insulating film is formed which extends on a surface of the first semiconductor... Agent: Elpida Memory, Inc.

20130075812 - Single-sided access device and fabrication method thereof: A single-sided access device includes an active fin structure comprising a source contact area and a drain contact area separated from each other by an isolation region therebetween; a trench isolation structure disposed at one side of the active fin structure, wherein the trench isolation structure intersects with the isolation... Agent:

20130075814 - Semiconductor device with a semiconductor via: A semiconductor device includes a semiconductor body having a first surface and a second surface, at least one electrode arranged in at least one trench extending from the first surface into the semiconductor body, and a semiconductor via extending in a vertical direction of the semiconductor body within the semiconductor... Agent: Infineon Technologies Ag

20130075815 - Semiconductor device: According to one embodiment, a semiconductor device includes a semiconductor substrate and a first semiconductor element provided on the semiconductor substrate. The first semiconductor element includes: a first semiconductor; a second semiconductor layer; a third semiconductor layer; a first insulating layer; a first base region; a first source region; a... Agent: Kabushiki Kaisha Toshiba

20130075816 - Lateral double diffused metal oxide semiconductor device and method for manufacturing the same: Disclosed are an LDMOS device and a method for manufacturing the same capable of decreasing the concentration of a drift region between a source finger tip and a drain, thereby increasing a breakdown voltage. An LDMOS device includes a gate which is formed on a substrate, a source and a... Agent: Dongbu Hitek Co., Ltd.

20130075818 - 3d semiconductor device and method of manufacturing same: A semiconductor device and method for fabricating a semiconductor device is disclosed. An exemplary semiconductor device includes a substrate and a 3D structure disposed over the substrate. The semiconductor device further includes a dielectric layer disposed over the 3D structure, a WFMG layer disposed over the dielectric layer, and a... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130075817 - Junctionless transistor: A transistor includes a semiconductor layer, and a gate dielectric is formed on the semiconductor layer. A gate conductor is formed on the gate dielectric and an active area is located in the semiconductor layer underneath the gate dielectric. The active area includes a graded dopant region that has a... Agent: International Business Machines Corporation

20130075819 - Semiconductor device and method of manufacturing same: A semiconductor device includes an active section for a main current flow and a breakdown withstanding section for breakdown voltage. An external peripheral portion surrounds the active section on one major surface of an n-type semiconductor substrate. The breakdown withstanding section has a ring-shaped semiconductor protrusion, with a rectangular planar... Agent:

20130075823 - Reliable contacts: A method for forming a device is disclosed. The method includes providing a substrate prepared with first and second contact regions and a dielectric layer over the contact region. First and second vias are formed in the dielectric layer. The first via is in communication with the first contact region... Agent: Globalfoundries Singapore Pte. Ltd.

20130075824 - Semiconductor device and manufacturing method thereof: A semiconductor device has first and second conductive type transistors on a substrate. First conductive type transistor includes: a first lower gate electrode portion on the substrate, including silicon including first impurity ions; a first intervening layer on the first lower gate electrode portion, including silicon including oxygen and/or nitrogen;... Agent: Elpida Memory, Inc.

20130075821 - Semiconductor device comprising replacement gate electrode structures and self-aligned contact elements formed by a late contact fill: When forming self-aligned contact elements in sophisticated semiconductor devices in which high-k metal gate electrode structures are to be provided on the basis of a replacement gate approach, the self-aligned contact openings are filled with an appropriate fill material, such as polysilicon, while the gate electrode structures are provided on... Agent: Globalfoundries Inc.

20130075825 - Semiconductor integrated circuit device and a method of manufacturing the same: In order to prevent noise from a power supply potential or a reference potential with a large potential difference from affecting a gate electrode and causing a malfunction, a first plug connected to the gate electrode and a second plug to which the power supply potential or the reference potential... Agent: Renesas Electronics Corporation

20130075822 - Structures and methods of self-aligned gate for sb-based fets: The advantage of narrow-bandgap Sb-based devices is the realization of high-frequency operation with much lower power consumption. However, some properties such as chemical stability are the key issues for developing Sb-based devices. The process temperature of the ion implant and thermal annealing in conventional silicon industry is over 1000° C.... Agent:

20130075820 - Superior integrity of high-k metal gate stacks by forming sti regions after gate metals: When forming sophisticated high-k metal gate electrode structures in an early manufacturing stage, superior process robustness, reduced yield loss and an enhanced degree of flexibility in designing the overall process flow may be accomplished by forming and patterning the sensitive gate materials prior to forming isolation regions.... Agent: Globalfoundries Inc.

20130075827 - Replacement gate semiconductor device: A method for fabricating a semiconductor device including providing a semiconductor substrate having a first opening and second opening. A dielectric layer is formed on the substrate. An etch stop layer on the dielectric layer in the first opening. Thereafter, a work function layer is formed on the etch stop... Agent: Taiwan Semiconductor Manufacturing Company, Ltd., ("tsmc")

20130075828 - Semiconductor device: A semiconductor device according to the invention includes: a first region on a semiconductor substrate, in which a first transistor is formed, the first transistor including first gate insulating film 4 containing a high dielectric constant material and first metal gate electrode 5 formed on first gate insulating film 4;... Agent: Elpida Memory, Inc.

20130075826 - Semiconductor device with strained channels induced by high-k capping metal layers: A semiconductor device with a metal gate is disclosed. The device includes a semiconductor substrate including a plurality of source and drain features to form a p-channel and an n-channel. The device also includes a gate stack over the semiconductor substrate and disposed between the source and drain features. The... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130075829 - Electrostatic discharge protection device: An electrostatic discharge (ESD) protection device includes a first transistor and a second transistor. The first transistor includes a first bulk electrode, a first electrode and a second electrode. The first bulk electrode and the first electrode form a first parasitic diode. The first bulk electrode and the second electrode... Agent: Nuvoton Technology Corporation

20130075830 - Semiconductor device and manufacturing method thereof: In a method, a gate dielectric film is formed on a semiconductor substrate. A gate electrode is formed on the gate dielectric film. Impurities of a first conduction-type are introduced into a drain-layer formation region. The impurities of the first conduction-type in the drain-layer formation region are activated by performing... Agent:

20130075831 - Metal gate stack having tialn blocking/wetting layer: A metal gate stack having a TiAlN blocking/wetting layer, and methods of manufacturing the same, are disclosed. In an example, an integrated circuit device includes a semiconductor substrate and a gate stack disposed over the semiconductor substrate. The gate stack includes a gate dielectric layer disposed over the semiconductor substrate;... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130075832 - Process for producing a conducting electrode: A process for producing a conducting electrode on a substrate, including: depositing a layer made of a dielectric; depositing a protective layer made of the nitride of a metal on the dielectric layer; depositing a functionalization layer made of a material including a chemical species, such that the free enthalpy... Agent: Commissariat A L' Energie Atomique Et Aux Energies Alternatives

20130075833 - Multi-layer scavenging metal gate stack for ultra-thin interfacial dielctric layer: A multi-layer scavenging metal gate stack, and methods of manufacturing the same, are disclosed. In an example, a gate stack disposed over a semiconductor substrate includes an interfacial dielectric layer disposed over the semiconductor substrate, a high-k dielectric layer disposed over the interfacial dielectric layer, a first conductive layer disposed... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130075834 - Bulk silicon moving member with dimple: A method for forming a semiconductor device includes forming a substrate, forming a moveable member of bulk silicon and forming a first dimple structure on a first surface of the moveable member, where the first surface faces the substrate.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd

20130075835 - Micro-electro-mechanical microphone and micro-electro-mechanical microphone chip integrated with filter: A microelectromechanical microphone comprises a shell body, a microelectromechanical microphone chip and an integrated circuit. The shell body having a cavity and an opening, sound from outside enters into the cavity from the opening. The microelectromechanical microphone chip and the integrated circuit are disposed on a circuit layout inside the... Agent: Merry Electronics (shenzhen) Co., Ltd.

20130075836 - Vented mems apparatus and method of manufacture: A micro-electromechanical system (MEMS) device includes a housing and a base. The base includes a port opening extending therethrough and the port opening communicates with the external environment. The MEMS die is disposed on the base and over the opening. The MEMS die includes a diaphragm and a back plate... Agent: Knowles Electronics, LLC

20130075846 - Magnetic memory: A memory includes an underlying layer of a ferromagnetic body, a first nonmagnetic layer on the underlying layer, a data memorizing layer laid on the first nonmagnetic layer and made of a ferromagnetic body having perpendicular magnetic anisotropy, a reference layer coupled through a second nonmagnetic layer with the data... Agent: Renesas Electronics Corporation

20130075847 - Magnetic memory: A magnetic memory has: a pinning layer being a perpendicular magnetic film whose magnetization direction is fixed; an underlayer formed on the pinning layer; and a data storage layer being a perpendicular magnetic film formed on the underlayer. The data storage layer has: a magnetization free region whose magnetization direction... Agent: Nec Corporation

20130075838 - Method and structure for a mram device with a bilayer passivation: The present disclosure provides a magnetoresistive random access memory (MRAM) device. The MRAM device includes a magnetic tunnel junction (MTJ) stack on a substrate; and a dual-layer passivation layer disposed around the MTJ stack. The dual-layer passivation layer includes an oxygen-free film formed adjacent sidewalls of the MTJ stack; and... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130075840 - Method for fabrication of a magnetic random access memory (mram) using a high selectivity hard mask: A self-aligned via of a MRAM cell that connects a memory element including a top electrode, a memory element stack having a plurality of layers, and a bottom electrode to a bit line running over array of the memory elements. The self-aligned via also serves as a hard mask for... Agent: Avalanche Technology, Inc.

20130075844 - Semiconductor device and manufacturing method thereof: A semiconductor device according to the present embodiment comprises a lower electrode provided above a semiconductor substrate and made of metal, an upper electrode provided above the lower electrode and made of metal, and a crystal layer provided between the lower electrode and the upper electrode. A thickness of each... Agent:

20130075841 - Semiconductor device and method for fabricating the same: A method for manufacturing a semiconductor device includes forming plural layers of a MTJ device, depositing a conductive layer over the plural layers, forming a hard mask pattern used for patterning the plural layers over the conductive layer, where the conductive layer is exposed through the hard mask pattern, performing... Agent:

20130075842 - Semiconductor device and method for fabricating the same: A method for fabricating a semiconductor device includes: forming an MTJ element and an electrode layer pattern over a substrate; forming a protective layer to protect the MTJ element and the electrode layer pattern; forming at least one insulation layer over the protective layer; forming a first hole by selectively... Agent:

20130075843 - Spin transistor and memory: A spin transistor according to an embodiment includes: a first magnetic layer formed above a substrate and serving as one of a source and a drain; an insulating film having a lower face facing to an upper face of the first magnetic layer, an upper face opposed to the lower... Agent: Kabushiki Kaisha Toshiba

20130075839 - Structure and method for a mram device with an oxygen absorbing cap layer: The present disclosure provides a MTJ stack for an MRAM device. The MTJ stack includes a pinned ferromagnetic layer over a pinning layer; a tunneling barrier layer over the pinned ferromagnetic layer; a free ferromagnetic layer over the tunneling barrier layer; a conductive oxide layer over the free ferromagnetic layer;... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130075837 - Technique for smoothing an interface between layers of a semiconductor device: The present disclosure provides a semiconductor memory device. The device includes a pinning layer having an anti-ferromagnetic material and disposed over a first electrode; a pinned layer disposed over the pinning layer; a composite layer disposed over the pinned layer, the composite layer having a magnetic material randomly distributed in... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130075845 - Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching device: Perpendicular magnetic anisotropy (PMA) type magnetic random access memory cells are constructed with a composite PMA layer to provide a magnetic tunnel junction (MTJ) with an acceptable thermal barrier, A PMA coupling layer is deposited between a first PMA layer and a second PMA layer to form the composite PMA... Agent: Qualcomm Incorporated

20130075848 - Three-dimensional boron particle loaded thermal neutron detector: Three-dimensional boron particle loaded thermal neutron detectors utilize neutron sensitive conversion materials in the form of nano-powders and micro-sized particles, as opposed to thin films, suspensions, paraffin, etc. More specifically, methods to infiltrate, intersperse and embed the neutron nano-powders to form two-dimensional and/or three-dimensional charge sensitive platforms are specified. The... Agent: Lawrence Livermore National Security, LLC

20130075850 - Flip-chip bonded imager die: An image sensor includes an imager die, a circuit board, and an optical layer. The circuit board is flip-chip bonded to the imager die. The optical layer is adhered to the circuit board and includes a first portion configured to refract light differently than a second portion. Both the first... Agent:

20130075849 - Solid state imaging device, solid state imaging element, portable information terminal device and method for manufacturing the solid state imaging element: According to one embodiment, a solid state imaging device includes a sensor substrate curved such that an upper face having a plurality of pixels formed is recessed and an imaging lens provided on the upper face side.... Agent: Kabushiki Kaisha Toshiba

20130075851 - Solid-state imaging device: A solid-state imaging device includes a plurality of pixels arranged in a matrix pattern on a substrate. Each of the pixels includes a photoelectric conversion portion configured to convert incident light to an electric signal, an optical waveguide formed over the photoelectric conversion portion, an interlayer insulating film formed around... Agent: Panasonic Corporation

20130075852 - Highly-depleted laser doped semiconductor volume: A device with increased photo-sensitivity using laser treated semiconductor as detection material is disclosed. In some embodiments, the laser treated semiconductor may be placed between and an n-type and a p-type contact or two Schottky metals. The field within the p-n junction or the Schottky metal junction may aid in... Agent:

20130075853 - Stacked die package for mems resonator system: A stacked die package for an electromechanical resonator system includes an electromechanical resonator die bonded or fixed to a control IC die for the electromechanical resonator by, for example, a thermally and/or electrically conductive epoxy. In various embodiments, the electromechanical resonator can be a micro-electromechanical system (MEMS) resonator or a... Agent:

20130075854 - High voltage esd protection apparatus: An ESD protection apparatus comprises a metal contact formed on the emitter of a transistor. The metal contact has a different conductivity type from the emitter. In addition, the metal contact and the emitter of the transistor form a diode connected in series with the transistor. The diode connected in... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130075855 - Manufacturing methods for accurately aligned and self-balanced superjunction devices: A method for manufacturing a semiconductor power device on a semiconductor substrate supporting a drift region composed of an epitaxial layer by growing a first epitaxial layer followed by forming a first hard mask layer on top of the epitaxial layer; applying a first implant mask to open a plurality... Agent:

20130075856 - Integrated circuit structure and method of forming the same: An embodiment is an integrated circuit (IC) structure. The structure comprises a deep n well in a substrate, a first pickup device in the deep n well, a first signal device in the deep n well, a dissipation device in the substrate, a second signal device in the substrate, a... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130075857 - Isolation structure, semiconductor device having the same, and method for fabricating the isolation structure: An isolation structure of a semiconductor, a semiconductor device having the same, and a method for fabricating the isolation structure are provided. An isolation structure of a semiconductor device may include a trench formed in a substrate, an oxide layer formed on a bottom surface and an inner sidewall of... Agent:

20130075858 - Semiconductor device: A semiconductor device has an electrical fuse formed on a substrate, having a first interconnect, a second interconnect respectively formed in different layers, and a via provided in a layer between the first interconnect and the second interconnect, connected to one end of the second interconnect and connected also to... Agent: Renesas Electronics Corporation

20130075860 - Method for fabricating a three-dimensional inductor carrier with metal core and structure thereof: A method for fabricating a inductor carrier comprises the steps of providing a substrate with a protective layer; forming a first photoresist layer on protective layer; patterning the first photoresist layer to form a first opening and first apertures; forming a first metal layer within first opening and first apertures;... Agent: Chipbond Technology Corporation

20130075859 - Semiconductor structure including guard ring: One or more embodiments related to a semiconductor structure, comprising: a conductive feature; an outer guard ring; and an inner guard ring between the outer guard ring and the conductive feature, the inner guard ring being electrically coupled to the conductive feature.... Agent:

20130075861 - Semiconductor structure including guard ring: One or more embodiments relate to a semiconductor structure, comprising: a conductive feature; an outer guard ring; and an inner guard ring between the outer guard ring and the conductive feature, the inner guard ring being electrically coupled to the conductive feature.... Agent: Infineon Technologies Ag

20130075862 - Embedded capacitor and method of fabricating the same: Methods are provided for forming a capacitor. In one embodiment, a method comprises providing an insulator material layer over a substrate, etching at least one via in the insulator material layer and depositing a contact material fill in the at least one via to form a first set of contacts.... Agent:

20130075863 - Esd protection apparatus: An ESD protection apparatus comprises a substrate, a low voltage p-type well and a low voltage n-type well formed on the substrate. The ESD protection device further comprises a first P+ region formed on the low voltage p-type well and a second P+ region formed on the low voltage n-type... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130075864 - Semiconductor device: An ESD protection element is formed by a PN junction diode including an N+ type buried layer having a proper impurity concentration and a P+ type buried layer and a parasitic PNP bipolar transistor which uses a P+ type drawing layer connected to a P+ type diffusion layer as the... Agent: Semiconductor Components Industries, LLC

20130075865 - Semiconductor device: An ESD protection element is formed by a PN junction diode including an N+ type buried layer having a proper impurity concentration and a first P+ type buried layer and a parasitic PNP bipolar transistor which uses a second P+ type buried layer connected to a P+ type diffusion layer... Agent: Semiconductor Components Industries, LLC

20130075866 - Semiconductor device: A PN junction diode is formed by an N+ type buried layer having a proper impurity concentration and a P+ type buried layer. The P+ type buried layer is combined with a P+ type drawing layer to penetrate an N− type epitaxial layer and be connected to an anode electrode.... Agent: Semiconductor Components Industries, LLC

20130075867 - Method of processing a surface of group iii nitride crystal and group iii nitride crystal substrate: There is provided a method of processing a surface of a group III nitride crystal, that includes the steps of: polishing a surface of a group III nitride crystal with a polishing slurry containing abrasive grains; and thereafter polishing the surface of the group III nitride crystal with a polishing... Agent: Sumitomo Electric Industries, Ltd.

20130075868 - Methods of transferring layers of material in 3d integration processes and related structures and devices: Methods of transferring a layer of semiconductor material from a first donor structure to a second structure include forming a generally planar weakened zone within the first donor structure defined by implanted ions therein. At least one of a concentration of the implanted ions and an elemental composition of the... Agent: Soitec

20130075869 - Chip comprising a fill structure: A chip includes a dielectric layer and a fill structure in the dielectric layer, wherein the fill structure extends along a dicing edge of the chip, with the fill structure abutting the dicing edge.... Agent: Infineon Technologies Ag

20130075870 - Method for protection of a layer of a vertical stack and corresponding device: A device and corresponding fabrication method includes a vertical stack having an intermediate layer between a lower region and an upper region. The intermediate layer is extended by a protection layer. The vertical stack has a free lateral face on which the lower region, the upper region and the protection... Agent: Stmicroelectronics (crolles 2) Sas

20130075871 - Multi-layer chip overlay target and measurement: A wafer includes an active region and a kerf region surrounding at least a portion of the active region. The wafer also includes a target region having a rectangular shape with a width and length greater than the width, the target region including one or more target patterns, at least... Agent: International Business Machines Corporation

20130075873 - Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device: Provided is a glass composition for protecting a semiconductor junction which contains at least SiO2, Al2O3, ZnO, CaO and 3 mol % to 10 mol % of B2O3, and substantially contains none of Pb, P, As, Sb, Li, Na and K. It is preferable that a content of SiO2 falls... Agent: Shindengen Electric Manufacturing Co., Ltd.

20130075872 - Metal pad structures in dies: A die includes a substrate, a metal pad over the substrate, and a passivation layer that has a portion over the metal pad. A dummy pattern is disposed adjacent to the metal pad. The dummy pattern is level with, and is formed of a same material as, the metal pad.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130075874 - Semiconductor structure and fabrication method thereof: A semiconductor structure includes a substrate, an oxide layer, a metallic oxynitride layer and a metallic oxide layer. The oxide layer is located on the substrate. The metallic oxynitride layer is located on the oxide layer. The metallic oxide layer is located on the metallic oxynitride layer. In addition, the... Agent:

20130075875 - Silicon nitride film of semiconductor element, and method and apparatus for producing silicon nitride film: Disclosed are: a silicon nitride film of a semiconductor element, which is formed by applying a bias power and appropriately controls hydrogen leaving from the silicon nitride film; and a method and apparatus for producing a silicon nitride film. Specifically disclosed is a silicon nitride film which is formed on... Agent: Mitsubishi Heavy Industries, Ltd.

20130075876 - Sealed porous materials, methods for making them, and semiconductor devices comprising them: A method for at least partially sealing a porous material is provided, comprising forming a sealing layer onto the porous material by applying a sealing compound comprising oligomers wherein the oligomers are formed by ageing a precursor solution comprising cyclic carbon bridged organosilica and/or bridged organosilanes. The method is especially... Agent: Imec

20130075877 - Semiconductor device having lateral element: A semiconductor device with a lateral element includes a semiconductor substrate, first and second electrodes on the substrate, and a resistive field plate extending from the first electrode to the second electrode. The lateral element passes a current between the first and second electrodes. A voltage applied to the second... Agent: Denso Corporation

20130075878 - Coaxial power module: A power module includes at least one semiconductor die holding structure. Each die holding structure has a substantially cylindrical outer profile and a central axis. Each die holding structure is disposed within a common cylindrical EMI shield. A plurality of semiconductor devices are mounted to each die holding structure to... Agent: General Electric Company

20130075879 - Semiconductor chip package and method of making same: A semiconductor chip package includes a substrate unit, a chip, metal members, a molding compound and a shielding layer. The chip is assembled on and electrically connected with the substrate unit. The substrate unit includes conductive seat portions surrounding the chip, and defines through holes respectively coated by conducting films... Agent: Ambit Microsystems (zhongshan) Ltd.

20130075880 - Packaging structure: A packaging structure comprises a first leadframe, a second leadframe, two grounding pins, two first pins, a plurality of first wires, a plurality of second wires, and a package body. The second leadframe is coupled to the drains of a first power transistor and a second power transistor. The two... Agent: Fortune Semiconductor Corporation

20130075881 - Memory card package with a small substrate: Disclosed is a memory card package with a small substrate by using a metal die pad having an opening to substitute the chip-carrying function of a conventional substrate so that substrate dimension can be reduced. A substrate is attached under the metal die pad. A first chip is disposed on... Agent:

20130075882 - Package structure: A package structure including a first leadframe, a second leadframe, a power pin, a ground pin, a first pin, several first wires, several second wires, and a package body is disclosed. The first leadframe is used for electrically coupling to the drains of a first power transistor and the second... Agent: Fortune Semiconductor Corporation

20130075883 - Integrated circuit packaging system with dual connection and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: forming a peripheral lead having a peripheral contact layer surrounding the peripheral lead with a non-horizontal side exposed from the peripheral contact layer; forming an inner lead and a paddle non-planar with the peripheral lead; mounting an integrated circuit... Agent:

20130075885 - Lead frame and packaging method: There is provided a lead frame and a packaging method. The lead frame comprises a first plurality of die pads, a second plurality of leads extending from the first plurality of die pads, and a third plurality of tie elements, each of which connects one of the first plurality of... Agent: Stmicroelectronics S.r.i.

20130075884 - Semiconductor package with high-side and low-side mosfets and manufacturing method: A semiconductor package method for co-packaging high-side (HS) and low-side (LS) semiconductor chips is disclosed. The HS and LS semiconductor chips are attached to two opposite sides of a lead frame, with a bottom drain electrode of the LS chip connected to a top side of the lead frame and... Agent:

20130075886 - Semiconductor device: A semiconductor device is provided with: a semiconductor element; and a connecting conductor that electrically connects at least one of an input terminal and an output terminal of the semiconductor element to a connection terminal of an electronic device. In this semiconductor device, the connecting conductor is a block structure.... Agent: Keihin Corporation

20130075887 - Stacked semiconductor device: Provided is a stacked semiconductor device (50) in which a semiconductor package (5) is stacked via connection terminals (8) on a semiconductor package (1), including a heat dissipating member (10) which is disposed between the semiconductor packages (1, 5), is brought into thermal contact with both of the packages (1,... Agent: Canon Kabushiki Kaisha

20130075888 - Semiconductor package and method of fabricating the same: A semiconductor package is provided, which includes: a micro electro mechanical system (MEMS) chip; a cap provided on the MEMS chip; an electronic element provided on the cap including a plurality of first conductive pads and second conductive pads; a plurality of first conductive elements electrically connected to the first... Agent: Siliconware Precision Industries Co., Ltd.

20130075889 - Integrated circuit packaging system with heat shield and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: mounting a device mounting structure over a bottom substrate; mounting a heat spreader having an opening formed by a single integral structure with a dam and a flange, the dam having a dam height greater than a flange height... Agent:

20130075890 - Integrated circuit and method of making: Integrated circuits and methods of fabricating integrated circuits are disclosed herein. One embodiment of an integrated circuit includes a die having a side, wherein a conductive stud extends substantially normal relative to the side. A dielectric layer having a first side and a second side is located proximate the side... Agent: Texas Instruments Incorporated

20130075891 - Flip chip type full wave rectification semiconductor device and its manufacturing method: This invention reveals a flip-chip type full-wave rectification semiconductor device which includes at least a PNNP type and/or NPPN type flip-chip, and a sheet stuff or substrate including a plurality pins, and which is characterized in that: all the soldering points (bumps) of the PNNP type and/or the NPPN type... Agent: Formosa Microsemi Co., Ltd.

20130075894 - Integrated circuit and method of making: Integrated circuits and methods of fabricating integrated circuits are disclosed herein. One embodiment of an integrated circuit includes a die having a side, wherein a conductive stud extends from the side. A dielectric layer having a first side and a second side is located proximate the side of the die... Agent: Texas Instruments Incorporated

20130075892 - Method for three dimensional integrated circuit fabrication: A method for fabricating three dimensional integrated circuits comprises providing a wafer stack wherein a plurality of semiconductor dies are mounted on a first semiconductor die, forming a molding compound layer on the first side of the first semiconductor die, wherein the plurality of semiconductor dies are embedded in the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130075901 - Semiconductor device and a method of manufacturing the same: A semiconductor device manufacturing technique which allows reduction of semiconductor chip size. First, a pad and other wires are formed over an insulating film. A surface protective film is formed over the insulating film including the pad and wires, and an opening is made in the surface protective film. The... Agent: Renesas Electronics Corporation

20130075895 - Semiconductor device and manufacturing method thereof: In one embodiment, a semiconductor device includes a chip stacked body disposed on an interposer substrate and an interface chip mounted on the chip stacked body. The chip stacked body has plural semiconductor chips, and is electrically connected via through electrodes provided in the semiconductor chips excluding a lowermost semiconductor... Agent:

20130075902 - Semiconductor device and method of forming conductive posts embedded in photosensitive encapsulant: A semiconductor package includes a post carrier having a base plate and plurality of conductive posts. A photosensitive encapsulant is deposited over the base plate of the post carrier and around the conductive posts. The photosensitive encapsulant is etched to expose a portion of the base plate of the post... Agent: Stats Chippac, Ltd.

20130075903 - Semiconductor device and method of forming different height conductive pillars to electrically interconnect stacked laterally offset semiconductor die: A semiconductor device has a first semiconductor die mounted over a carrier. Wettable contact pads can be formed over the carrier. A second semiconductor die is mounted over the first semiconductor die. The second die is laterally offset with respect to the first die. An electrical interconnect is formed between... Agent: Stats Chippac, Ltd.

20130075900 - Semiconductor device and method of forming insulating layer on conductive traces for electrical isolation in fine pitch bonding: A semiconductor device has a semiconductor die with a plurality of bumps formed over an active surface of the semiconductor die. A plurality of first conductive traces with interconnect sites is formed over a substrate. The bumps are wider than the interconnect sites. A surface treatment is formed over the... Agent: Stats Chippac, Ltd.

20130075896 - Semiconductor device, manufacturing method thereof, and electronic apparatus: A semiconductor device includes a semiconductor substrate and a through electrode provided in a through hole formed in the semiconductor substrate. The through electrode partially protrudes from a back surface of the semiconductor substrate, which is opposite to an active surface thereof. The through electrode includes a resin core and... Agent: Seiko Epson Corporation

20130075897 - Semiconductor integrated circuit device for driving display device and manufacturing method thereof: A semiconductor integrated circuit device for driving an LCD, COG chip packaging is performed. To achieve this, an elongate and relatively thick gold bump electrode is formed over an aluminum-based pad having a relatively small area. In a wafer probe test performed after formation of the gold bump electrode, a... Agent: Renesas Electronics Corporation

20130075899 - Semiconductor package and method of forming z-direction conductive posts embedded in structurally protective encapsulant: A semiconductor package is made using a prefabricated post carrier including a base plate and plurality of conductive posts. A film encapsulant is disposed over the base plate of the post carrier and around the conductive posts. A semiconductor die is mounted to a temporary carrier. The post carrier and... Agent: Stats Chippac, Ltd.

20130075898 - Surface depressions for die-to-die interconnects and associated systems and methods: Stacked microelectronic dies employing die-to-die interconnects and associated systems and methods are disclosed herein. In one embodiment, a stacked system of microelectronic dies includes a first microelectronic die, a second microelectronic die attached to the first die, and a die-to-die interconnect electrically coupling the first die with the second die.... Agent: Micron Technology, Inc.

20130075893 - Synchronous buck converter having coplanar array of contact bumps of equal volume: A packaged power supply module (100) comprising a chip (110) with a first power field effect transistor (FET) and a second chip (120) with a second FET conductively attached side-by-side onto a conductive carrier (130), the transistors having bond pads of a first area (210) and the carrier having bond... Agent: Texas Instruments Incorporated

20130075904 - Coplaner waveguide transition: A coplanar waveguide transition includes a substrate, a first coplanar waveguide on a first side of the substrate, and a second coplanar waveguide on a second side of the substrate. The coplanar waveguide transition includes a first, a second, and a third via through the substrate electrically coupling the first... Agent: Regents Of The University Of Minnesota

20130075905 - Semiconductor chips and semiconductor packages and methods of fabricating the same: A semiconductor device includes a substrate and a through via penetrating the substrate. The through via has a protruding portion at a first end thereof extending out from a first surface of the substrate and a second end of the via contacting an interconnection line proximate a second, opposite, end... Agent: Samsung Electronics Co., Ltd.

20130075906 - Semiconductor device and method for manufacturing semiconductor device: A semiconductor device includes: a foundation layer that is provided on a substrate and is electrically conductive; a nickel layer provided on the foundation layer; and a solder provided on the nickel layer, the nickel layer having a first region on a side of the foundation layer and a second... Agent: Sumitomo Electric Device Innovations, Inc.

20130075907 - Interconnection between integrated circuit and package: In order to achieve finer bump interconnect pitch for integrated circuit packaging, while relieving pressure-induced delamination of upper layer dielectric films, the under bump metallurgy of the present invention provides a pressure distribution pedestal upon which a narrower copper pillar is disposed. A solder mini-bump is disposed on the upper... Agent: Broadcom Corporation

20130075910 - Modulated deposition process for stress control in thick tin films: A multi-layer TiN film with reduced tensile stress and discontinuous grain structure, and a method of fabricating the TiN film are disclosed. The TiN layers are formed by PVD or IMP in a nitrogen plasma. Tensile stress in a center layer of the film is reduced by increasing N2 gas... Agent: Texas Instruments Incorporated

20130075911 - Semiconductor device having electrode/film opening edge spacing smaller than bonding pad/electrode edge spacing: A semiconductor device has a conductive member coupled to the surface of a bonding pad exposed from an opening formed in a passivation film. A second planar distance between a first end of an electrode layer and a first end of a bonding pad is greater than a first planar... Agent: Renesas Electronics Corporation

20130075909 - Semiconductor device including metal-containing conductive line and method of manufacturing the same: A semiconductor device includes: a semiconductor substrate having a trench therein, a metal-containing barrier layer extending along an inner wall of the trench and defining a wiring space in the trench, the wiring space having a first width along a first direction, and a metal-containing conductive line on the metal-containing... Agent:

20130075908 - Semiconductor interconnect structure having enhanced performance and reliability: An interconnect structure and method for fabricating the interconnect structure having enhanced performance and reliability, by minimizing oxygen intrusion into a seed layer and an electroplated copper layer of the interconnect structure, are disclosed. At least one opening in a dielectric layer is formed. A sacrificial oxidation layer disposed on... Agent: International Business Machines Corporation

20130075912 - Semiconductor device and method for manufacturing the same: According to one embodiment, a method for manufacturing a semiconductor device includes: forming a silicon oxide film on a semiconductor substrate; forming a via in the silicon oxide film; forming a contact layer inside the via; forming a silicon layer on the contact layer; and forming a tungsten film embedded... Agent:

20130075913 - Structure and method for reducing vertical crack propagation: A semiconductor device and a method of fabricating the same, includes vertically stacked layers on an insulator. Each of the layers includes a first dielectric insulator portion, a first metal conductor embedded within the first dielectric insulator portion, a first nitride cap covering the first metal conductor, a second dielectric... Agent: International Business Machines Corporation

20130075914 - Semiconductor element: There is provided a semiconductor element including a semiconductor layer, a translucent electrode which is formed on the semiconductor layer, and a pad electrode which is formed on the translucent electrode, wherein the translucent electrode includes a recessed part on which the pad electrode is mounted, and wherein a thickness... Agent: Nichia Corporation

20130075915 - Integrated circuit packaging system with chip stacking and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing a first substrate; mounting an integrated circuit structure on the first substrate; mounting a second substrate on the integrated circuit structure; coupling a vertical chip to the first substrate and to the second substrate; and forming a package... Agent:

20130075916 - Integrated circuit packaging system with external wire connection and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing a package carrier; mounting an integrated circuit to the package carrier; forming an external wire on the package carrier and adjacent to the integrated circuit; forming an encapsulation on the package carrier over the external wire; and forming... Agent:

20130075917 - Multi-chip and multi-substrate reconstitution based packaging: Embodiments for multi-chip and multi-substrate reconstitution based packaging are provided. Example packages are formed using substrates from a reconstitution. substrate panel or strip. The reconstitution substrate panel or strip may include known good substrates of same or different material types and/or same of different layer counts and sizes. As such,... Agent: Broadcom Corporation

20130075919 - Semiconductor device and method of forming fo-wlcsp having conductive layers and conductive vias separated by polymer layers: A Fo-WLCSP has a first polymer layer formed around a semiconductor die. First conductive vias are formed through the first polymer layer around a perimeter of the semiconductor die. A first interconnect structure is formed over a first surface of the first polymer layer and electrically connected to the first... Agent: Stats Chippac, Ltd.

20130075918 - Shift register memory: In one embodiment, a shift register memory includes a substrate, and a channel layer provided on the substrate, and having a helical shape rotating around an axis which is perpendicular to a surface of the substrate. The memory further includes at least three control electrodes provided on the substrate, extending... Agent: Kabushiki Kaisha Toshiba

20130075931 - Bond pad structure: A bond pad structure for an integrated circuit chip package is disclosed. The bond pad structure includes a top metal layer, a patterned metal layer and an interconnection structure. The patterned metal layer is formed below the top metal layer and includes an annular metal layer and a plurality of... Agent: Shanghai Hua Hong Nec Electronics Co., Ltd.

20130075921 - Forming packages having polymer-based substrates: A method includes applying a polymer-comprising material over a carrier, and forming a via over the carrier. The via is located inside the polymer-comprising material, and substantially penetrates through the polymer-comprising material. A first redistribution line is formed on a first side of the polymer-comprising material. A second redistribution line... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130075928 - Integrated circuit and method of making: Circuits and methods of fabricating circuits are disclosed herein. An embodiment of the circuit includes a die having a side, wherein a connection point is located on the side. A dielectric layer having a first side, a second side, and at least one via extending between the first side and... Agent: Texas Instruments Incorporated

20130075922 - Integrated circuit packaging system with a substrate embedded dummy-die paddle and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing a dummy-die paddle having a first inactive side facing up, a second inactive side facing down; forming an insulator in a single continuous structure around and in direct contact with the first inactive side; and mounting an integrated... Agent:

20130075923 - Integrated circuit packaging system with encapsulation and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing a substrate having a substrate first side and a substrate second side opposite the substrate first side; attaching a base integrated circuit to the substrate first side; attaching a mountable integrated circuit to the substrate second side; attaching... Agent:

20130075927 - Integrated circuit packaging system with encapsulation and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing a base substrate; attaching a base integrated circuit on the base substrate; forming a base encapsulation, having a base encapsulation top side, on the base substrate and around the base integrated circuit; forming a base conductive via, having... Agent:

20130075926 - Integrated circuit packaging system with package stacking and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing a base substrate; applying a molded under-fill on the base substrate; forming a substrate contact extender through the molded under-fill and in direct contact with the base substrate; mounting a stack device over the molded under-fill; attaching a... Agent:

20130075920 - Multilayer connection structure and making method: An IC device comprises a stack of contact levels, each including conductive layer and an insulation layer. A dielectric liner surrounds an interlevel conductor within an opening in the stack of contact levels. The opening passes through a portion of the stack of contact levels. The interlevel conductor is electrically... Agent: Macronix International Co., Ltd.

20130075933 - Package-on-package system with through vias and method of manufacture thereof: A method of manufacture of a package-on-package system includes: providing a substrate connection; attaching a semiconductor die to the substrate connection using an adhesive, with the substrate connection affixed directly by the adhesive; forming an encapsulant around the semiconductor die to have a bottom exposed surface coplanar with a bottom... Agent:

20130075932 - Power semiconductor module with integrated thick-film printed circuit board: A power semiconductor module includes a first printed circuit board having a first insulation carrier, and a first upper metallization and a first lower metallization applied to the first insulation carrier on mutually opposite sides, and a second printed circuit board having a second insulation carrier and a second upper... Agent: Infineon Technologies Ag

20130075925 - Semiconductor device: A semiconductor device is free from degradation of characteristics attributable to a manufacturing process thereof and its characteristics are hardly affected by changes in electric potentials of bonding pads. The semiconductor device 10 includes an active region 12, a first insulating layer 13 covering the active region 12, a floating... Agent: Sanken Electric Co., Ltd.

20130075924 - Semiconductor device and method of forming stacked vias within interconnect structure for fo-wlcsp: A semiconductor device has a semiconductor die mounted to a carrier. An encapsulant is deposited over the semiconductor die and carrier. The carrier is removed. A first insulating layer is formed over the encapsulant and semiconductor die. First vias are formed through the first insulating layer to expose contact pads... Agent: Stats Chippac, Ltd.

20130075929 - Semiconductor device and method of manufacturing the same: A semiconductor device of an embodiment includes: a substrate; a first catalytic metal film on the substrate; graphene on the first catalytic metal film; an interlayer insulating film on the graphene; a contact hole penetrating through the interlayer insulating film; a conductive film at the bottom portion of the contact... Agent: Kabushiki Kaisha Toshiba

20130075930 - Semiconductor substrate, eletronic device and method for manufacturing the same: A semiconductor substrate includes a vertical conductor and an insulating layer. The vertical conductor includes a metal/alloy component of a nanocomposite crystal structure and is filled in a vertical hole formed in the semiconductor substrate along its thickness direction. The insulating layer is formed around the vertical conductor in a... Agent: Napra Co., Ltd.

20130075934 - Semiconductor device: In one embodiment, a semiconductor device includes a first wiring provided in a first wiring layer along a first direction, a second wiring provided in a second wiring layer along a second direction orthogonal to the first direction, the second wiring intersecting with the first wiring at a first intersect... Agent: Kabushiki Kaisha Toshiba

20130075935 - Composite layered chip package: A composite layered chip package includes first and second subpackages that are stacked. Each subpackage includes a main body and wiring. The main body includes: a main part having a top surface and a bottom surface; first terminals disposed on the top surface of the main part; and second terminals... Agent: Headway Technologies, Inc.

20130075936 - Semiconductor device and method of forming interconnect substration for fo-wlcsp: A semiconductor device has a first encapsulant deposited over a first carrier. A plurality of conductive vias is formed through the first encapsulant to provide an interconnect substrate. A first semiconductor die is mounted over a second carrier. The interconnect substrate is mounted over the second carrier adjacent to the... Agent: Stats Chippac, Ltd.

20130075937 - Apparatus and methods for molding die on wafer interposers: Methods and apparatus for performing molding on die on wafer interposers. A method includes receiving an interposer assembly having a die side and an opposite side including two or more integrated circuit dies mounted on the die side of the interposer, the interposer assembly having spaces formed on the die... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130075938 - Photolithography alignment mark, mask and semiconductor wafer containing the same mark: A photolithography alignment mark and a mask and semiconductor wafer containing said mark are described. The alignment mark comprises: a plurality of first alignment lines arranged parallel with each other in a first direction; a plurality of second alignment lines arranged parallel with each other in a second direction perpendicular... Agent: Semiconductor Manufacturing International (beijing) Corporation

20130069029 - Non-volatile memory device and manufacturing method of the same: According to one embodiment, a memory cell section includes a memory layer in which a non-volatile memory cell is arranged at an intersecting position of a first wiring and a second wiring to be sandwiched by the first wiring and the second wiring. A first drawing section connects the memory... Agent: Kabushiki Kaisha Toshiba

20130069028 - Select devices for memory cell applications: Select devices for memory cell applications and methods of forming the same are described herein. As an example, one or more non-ohmic select devices can include at least two tunnel barrier regions formed between a first metal material and a second metal material, and a third metal material formed between... Agent: Micron Technology, Inc.

20130069031 - Multilevel resistive memory having large storage capacity: The present invention discloses a multilevel resistive memory having large storage capacity, which belongs to a field of a fabrication technology of a resistive memory. The resistive memory includes an top electrode and a bottom electrode, and a combination of a plurality of switching layers and defective layers interposed between... Agent: Peking University No. 5 Yiheyuan Road Haidian District

20130069030 - Resistive memory cell including integrated select device and storage element: Resistive memory cells including an integrated select device and storage element and methods of forming the same are described herein. As an example, a resistive memory cell can include a select device structure including a Schottky interface, and a storage element integrated with the select device structure such that an... Agent: Micron Technology, Inc.

20130069038 - Light converting and emitting device with suppressed dark-line defects: Light emitting systems are described. Particularly, light emitting systems and light converting components utilized within these systems are described. The light emitting system and components are formed such that dark-line defects do not interfere with the light emitting system efficiency.... Agent: 3m Innovative Properties Company

20130069034 - Light-emitting element having nitride semiconductor multiquantum barrier, and process for production thereof: An Al0.95Ga0.05N:Mg (25 nm) single electron barrier can stop electrons having energy levels lower than the barrier height. Meanwhile, a 5-layer Al0.95Ga0.05N (4 nm)/Al0.77Ga0.23N (2 nm) MQB has quantum-mechanical effects so as to stop electrons having energy levels higher than the barrier height. Thus, electrons having energy levels higher than... Agent: Riken

20130069037 - Light-emitting element, light-emitting device and electronic device: The light-emitting element of the present invention includes a light-emitting layer and a layer for controlling movement of carriers between a pair of electrodes. The layer for controlling movement of carriers includes a first organic compound having a carrier transporting property and a second organic compound for reducing the carrier... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130069036 - Light-emitting element, method of producing light-emitting element, and display device: A light-emitting element where a positive electrode is formed on the surface of a transparent substrate; a hole transport layer is formed on the surface of the positive electrode; and a light-emitting layer made of quantum dots is formed on the surface of the hole transport layer. The light-emitting layer... Agent: Murata Manufacturing Co., Ltd.

20130069033 - Semiconductor device, wafer, method for manufacturing semiconductor device, and method for manufacturing wafer: According to one embodiment, a semiconductor device includes a first layer of n-type including a nitride semiconductor, a second layer of p-type including a nitride semiconductor, a light emitting unit, and a first stacked body. The light emitting unit is provided between the first and second layers. The first stacked... Agent: Kabushiki Kaisha Toshiba

20130069035 - Semiconductor light emitting device: According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting layer, and an electron blocking layer. The light emitting layer is provided between the n-type semiconductor layer and the p-type semiconductor layer and includes a nitride semiconductor. The electron... Agent: Kabushiki Kaisha Toshiba

20130069032 - Semiconductor light emitting device, wafer, method for manufacturing semiconductor light emitting device, and method for manufacturing wafer: According to one embodiment, a semiconductor light emitting device includes a first layer of n-type and a second layer of p-type including a nitride semiconductor, a light emitting unit provided between the first and second layers, a first stacked structure provided between the first layer and the light emitting unit,... Agent: Kabushiki Kaisha Toshiba

20130069039 - Ge quantum dots for dislocation engineering of iii-n on silicon: A virtual substrate structure includes a crystalline silicon substrate with a first layer of III-N grown on the silicon substrate. Ge clusters or quantum dots are grown on the first layer of III-N and a second layer of III-N is grown on the Ge clusters or quantum dots and any... Agent:

20130069040 - Organic nanofiber structure based on self-assembled organogel, organic nanofiber transistor using the same, and method of manufacturing the organic nanofiber transistor: An organic nanofiber including a gelled organic semiconductor compound. Also disclosed is an organic semiconductor transistor and a method of manufacturing an organic semiconductor transistor.... Agent: Samsung Electronics Co., Ltd.

20130069041 - Method for manufacturing graphene nano-ribbon, mosfet and method for manufacturing the same: A MOSFET with a graphene nano-ribbon, and a method for manufacturing the same are provided. The MOSFET comprises an insulating substrate; and an oxide protection layer on the insulating substrate. At least one graphene nano-ribbon is embedded in the oxide protection layer and has a surface which is exposed at... Agent:

20130069049 - Compound comprising a five-membered hetero ring, an organic electrical element using the same and a terminal thereof: Disclosed are a compound comprising a five-membered hetero ring, an organic electrical element using the same and a terminal thereof.... Agent: Duksan High Metal Co., Ltd.

20130069043 - Electro optic devices: An electro optic device comprising a first electrode and a second electrode and an emissive layer located between the first and second electrodes, the emissive layer comprising a polymeric semiconductor, or semiconducting and luminescent material having a thickness of 200 nm to 3000 nm.... Agent: Cambridge Enterprise Limited

20130069042 - Electrode foil and organic device: There are provided an electrode foil which has both the functions of a supporting base material and a reflective electrode and also has a superior thermal conductivity; and an organic device using the same. The electrode foil comprises a metal foil and a reflective layer provided directly on the metal... Agent: Mitsui Mining & Smelting Co., Ltd.

20130069048 - Luminescent device and method of producing the same: An electroluminescent device including a substrate on which a first electrode is formed; a transparent substrate disposed on the first electrode side of the substrate; a color filter disposed between the first electrode and the transparent substrate; an electroluminescent layer disposed between the first electrode and the color filter; and... Agent: Fujifilm Corporation

20130069050 - Optoelectronic device having an embedded electrode: An optoelectronic device including a first electrode arranged on a substrate, a second electrode that includes a first surface facing the first electrode, and a semiconductor material layer that is in electric contact with the first and second electrodes. The second electrode includes a side wall that is adjacent to... Agent: Commissariat A L'energie Atomique Et Aux Energies Alternatives

20130069045 - Organic el display and method of manufacturing organic el display: The organic EL display includes an organic EL device A having at least a lower electrode 300, an organic layer including at least a light emitting layer, and an upper electrode 305 and a thin film transistor B on a transparent plastic substrate 100, a source electrode or drain electrode... Agent:

20130069051 - Organic el element: Disclosed is an organic EL element which requires a low electric power and can exhibit high reliability under high temperature environments. Specifically disclosed is an organic EL element produced by forming, between an anode (2) and a cathode (4) by lamination, an organic layer (3) which comprises at least a... Agent: Nippon Seiki Co., Ltd

20130069046 - Organic electroluminescent element: Provided is an organic electroluminescent element that achieves increased emission intensity in the front direction of the organic electroluminescent element without reducing the size of the light-emitting region thereof. The organic electroluminescent element includes: a reflective electrode; an organic electroluminescent layer including a light-emitting layer; a transparent electrode; and a... Agent: Canon Kabushiki Kaisha

20130069044 - Organic light-emitting diode with enhanced efficiency: Generally, the devices provided herein comprise at least a hole-transport layer, two light-emitting layers, and an electron-transport layer, each having a highest occupied molecular orbital (HOMO) energy level and a lowest unoccupied molecular orbital (LUMO) energy level, wherein at least one of the HOMO energy levels and/or the LUMO energy... Agent: Nitto Denko Corporation

20130069047 - Photoelectric conversion element and imaging device: n

20130069058 - Display device: With an increase in the definition of a display device, the number of pixels is increased, and thus the numbers of gate lines and signal lines are increased. Due to the increase in the numbers of gate lines and signal lines, it is difficult to mount an IC chip having... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130069056 - Insulated-gate field-effect transistor: A power MISFET using an oxide semiconductor is provided. A drain electrode and a gate electrode having a trapezoidal cross section are formed with a semiconductor layer provided therebetween, a semiconductor layer is formed on a side surface of the gate electrode, and a source electrode is in contact with... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130069052 - Memory cells, semiconductor devices, systems including such cells, and methods of fabrication: A memory cell is disclosed. The memory cell includes a transistor and a capacitor. The transistor includes a source region, a drain region, and a channel region including an indium gallium zinc oxide (IGZO, which is also known in the art as GIZO) material. The capacitor is in operative communication... Agent: Micron Technology, Inc.

20130069053 - Semiconductor device: To provide a transistor which includes an oxide semiconductor and is capable of operating at high speed or a highly reliable semiconductor device including the transistor, a transistor in which an oxide semiconductor layer including a pair of low-resistance regions and a channel formation region is provided over an electrode... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130069055 - Semiconductor device: Provided is a semiconductor device in which an oxide semiconductor layer is provided; a pair of wiring layers which are provided with the gate electrode layer interposed therebetween are electrically connected to the low-resistance regions; and electrode layers are provided to be in contact with the low-resistance regions, below regions... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130069054 - Semiconductor device and manufacturing method thereof: In a semiconductor device including an oxide semiconductor layer, a conductive layer is formed in contact with a lower portion of the oxide semiconductor layer and treatment for adding an impurity is performed, so that a channel formation region and a pair of low-resistance regions between which the channel formation... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130069059 - Semiconductor device and method for manufacturing the same: A more convenient and highly reliable semiconductor device which has a transistor including an oxide semiconductor with higher impact resistance used for a variety of applications is provided. A semiconductor device has a bottom-gate transistor including a gate electrode layer, a gate insulating layer, and an oxide semiconductor layer over... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130069060 - Semiconductor device and method for manufacturing the same: It is an object to provide an oxide semiconductor which is suitable for use in a semiconductor device. Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor. Provided is a semiconductor device including an In—Ga—Zn—O based oxide semiconductor layer in a channel formation region of... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130069061 - Thin film transistor, contact structure, substrate, display device, and methods for manufacturing the same: A TFT 17 provided on a substrate 3 is provided. The TFT 17 includes a gate electrode 31, a gate insulating film 32, a semiconductor 33, a source electrode 34, a drain electrode 35, and a protection film 36. The semiconductor 33 includes a metal oxide semiconductor. The semiconductor 33... Agent:

20130069057 - Wafer with high rupture resistance: A wafer with high rupture resistance includes a plurality of surfaces, wherein the surfaces include a largest surface having a largest area than others and a side surface connected to the fringe of the largest surface. The side surface forms a nanostructured layer thereon to assist the stress dispersion of... Agent:

20130069063 - Integrated circuit system with test pads and method of manufacture thereof: A method of manufacture of an integrated circuit system includes: providing a substrate having a test pad with element pads; forming a conductive layer over the test pad, the conductive layer having element layers directly on the element pads; and mounting an integrated circuit over the substrate.... Agent:

20130069062 - Leakage measurement of through silicon vias: A leakage measurement structure for through substrate vias which includes a semiconductor substrate; a plurality of through substrate vias in the semiconductor substrate extending substantially through the semiconductor substrate; and a leakage measurement structure located in the semiconductor substrate. The leakage measurement structure includes a plurality of substrate contacts extending... Agent: International Business Machines Corporation

20130069064 - Semiconductor device: A semiconductor device has a transistor in which a resistance is inserted between a gate electrode and a source electrode, and a diode inserted between the gate electrode and the source electrode in series in relation to the resistance.... Agent: Kabushiki Kaisha Toshiba

20130069065 - Silicon carbide mosfet with high mobility channel: A semiconductor device may include a semiconductor body of silicon carbide (SiC) and a field effect transistor. The field effect transistor has the semiconductor body that includes a drift region. A polycrystalline silicon layer is formed over or on the semiconductor body, wherein the polycrystalline silicon layer has an average... Agent: Infineon Technologies Ag

20130069066 - Thin film transistor and manufacture method thereof: Disclosed is a thin film transistor, comprising a first conductive layer, a first insulation layer, an amorphous silicon layer, an ohmic contact layer, a second insulation layer, a second conductive layer, a protective layer and a transparent electrode layer. The present invention also relates to a manufacture method of the... Agent: Shenzhen China Star Optoelectronics Technology Co.,ltd.

20130069067 - Organic light emitting diode (oled) display device and method for manufacturing the same: The present invention relates to an organic light emitting diode (OLED) display device and a manufacturing method thereof. An object of the present invention is to provide an organic light emitting diode (OLED) display device and a manufacturing method thereof, in which an auxiliary electrode is formed between a substrate... Agent:

20130069068 - Semiconductor device, light-emitting device, and electronic device: An object is to prevent an operation defect and to reduce an influence of fluctuation in threshold voltage of a field-effect transistor. A field-effect transistor, a switch, and a capacitor are provided. The field-effect transistor includes a first gate and a second gate which overlap with each other with a... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130069069 - Thin film transistor array panel: A thin film transistor array panel includes a gate line and the driver connection line formed with the same layer material, a data line and a driving pad formed with the same layer material, a first field generating electrode and a connecting member formed with the same layer material, and... Agent: Samsung Display Co., Ltd.

20130069070 - Manufacturing method for display device having a plurality of thin film transistors and display device formed thereby: A manufacturing method of a thin film transistor includes: forming semiconductor layers for a plurality of thin film transistors over a substrate; forming an insulating layer covering the semiconductor layers; and forming a metal layer over the insulating layer. The method further includes: patterning the metal layer to form mask... Agent: Samsung Mobile Display Co., Ltd.

20130069078 - Crystal producing apparatus, crystal producing method, substrate producing method, gallium nitride crystal, and gallium nitride substrate: A crystal producing apparatus includes a crystal forming unit and a crystal growing unit. The crystal forming unit forms a first gallium nitride (GaN) crystal by supplying nitride gas into melt mixture containing metal sodium (Na) and metal gallium (Ga). The first GaN crystal is sliced and polished to form... Agent:

20130069079 - Method of producing template for epitaxial growth and nitride semiconductor device: A surface of a sapphire (0001) substrate is processed so as to have recesses and protrusions so that protrusion tops are made flat and have a given plan-view pattern. An initial-stage AlN layer is epitaxially grown on the surface of the sapphire (0001) substrate so that new recesses are formed... Agent: Soko Kagaku Co., Ltd.

20130069075 - Nitride semiconductor crystal producing method, nitride semiconductor epitaxial wafer, and nitride semiconductor freestanding substrate: A nitride semiconductor crystal producing method, a nitride semiconductor epitaxial wafer, and a nitride semiconductor freestanding substrate, by which it is possible to suppress the occurrence of cracking in the nitride semiconductor crystal and to ensure the enhancement of the yield of the nitride semiconductor crystal. The nitride semiconductor crystal... Agent: Hitachi Cable, Ltd.

20130069076 - Nitride semiconductor device and manufacturing method for the same: Provided is a nitride semiconductor device comprising a base substrate; a buffer layer formed above the base substrate; an active layer formed on the buffer layer; and at least two electrodes formed above the active layer. The buffer layer includes one or more composite layers that each have a plurality... Agent: Advanced Power Device Research Association

20130069074 - Power device and method of manufacturing the same: According to an example embodiment, a power device includes a substrate, a nitride-containing stack on the substrate, and an electric field dispersion unit. Source, drain, and gate electrodes are on the nitride-containing stack. The nitride-containing stack includes a first region that is configured to generate a larger electric field than... Agent: Samsung Electronics Co., Ltd.

20130069072 - Semiconductor crystal substrate, manufacturing method of semiconductor crystal substrate, manufacturing method of semiconductor device, power unit, and amplifier: A semiconductor crystal substrate includes a substrate; and a protection layer formed by applying nitride on a surface of the substrate. The protection layer is in an amorphous state in a peripheral area at an outer peripheral part of the substrate, and the protection layer is crystallized in an internal... Agent: Fujitsu Limited

20130069071 - Semiconductor device and method for manufacturing the same: Compression strains are generated at an interface between the cap layer and the barrier layer and an interface between the channel layer and the buffer layer and a tensile strain is generated at an interface between the barrier layer and the channel layer. Therefore, negative charge is higher than positive... Agent: Renesas Electronics Corporation

20130069073 - White organic light emitting device: The white organic light emitting device for improved efficiencies includes an anode and a cathode opposing each other on a substrate, a charge generation layer between the anode and the cathode, a first stack and a second stack interposed between the anode and the charge generation layer, and between the... Agent: Lg Display Co., Ltd.

20130069077 - White organic light emitting device: Disclosed white organic light emitting device includes an anode and a cathode opposing each other; a charge generation layer interposed between the anode and the cathode; a first stack interposed between the anode and the charge generation layer, the first stack including a first hole transport layer and a first... Agent: Lg Display Co., Ltd.

20130069081 - Layout method to minimize context effects and die area: An integrated circuit with an active geometry with a wide active region and with a narrow active region with at least one jog where said wide active region transitions to said narrow active region and where a gate overlies said jog. A method of making an integrated circuit with an... Agent: Texas Instruments Incorporated

20130069080 - Semiconductor device and method for manufacturing same: According to one embodiment, a semiconductor device includes a silicon carbide substrate having a first surface and a second surface on a side opposite to the first surface, a semiconductor layer having an element region and a peripheral region provided on the second surface of the silicon carbide substrate, an... Agent: Kabushiki Kaisha Toshiba

20130069082 - Semiconductor device and solid state relay using same: A semiconductor device includes one or more unipolar compound semiconductor element; and bypass semiconductor elements externally connected to the respective compound semiconductor elements in parallel. A turn-on voltage of the bypass semiconductor elements is smaller than a turn-on voltage of the compound semiconductor elements in the direction from the source... Agent: Panasonic Corporation

20130069083 - Differential untraviolet curing using external optical elements: A lighting module has an array of solid state light emitters, a package in which the array of solid state light emitters resides, the package having a window and an external optical element arranged adjacent the window, the external optical element having a coating, the coating forming an optical pattern... Agent: Phoseon Technology, Inc.

20130069089 - High efficacy semiconductor light emitting devices employing remote phosphor configurations: A semiconductor light emitting apparatus a semiconductor light emitting device configured to emit light inside a hollow shell including wavelength conversion material dispersed therein or thereon. A semiconductor light emitting apparatus according to some embodiments is capable of generating in excess of 250 lumens per watt, and in some cases... Agent: Cree, Inc

20130069088 - Light emitting diode with conformal surface electrical contacts with glass encapsulation: An optoelectronic device (e.g., LED) comprising one or more conformal surface electrical contacts conforming to surfaces of the device; and a high refractive index glass partially or totally encapsulating the device and the conformal surface electrical contacts, wherein traditional wire bonds and/or bond pads are not used and the glass... Agent: The Regents Of The University Of California

20130069086 - Method for producing a plurality of optoelectronic semiconductor chips: A method for producing a plurality of optoelectronic semiconductor chips includes providing a carrier wafer having a first surface and a second surface opposite the first surface. wherein a plurality of individual component layer sequences spaced apart from one another in a lateral direction are applied on the first surface,... Agent: Osram Opto Semiconductors Gmbh

20130069087 - Multi-layer wiring substrate, active matrix substrate, image display apparatus using the same, and multi-layer wiring substrate manufacturing method: A multiple-layer wiring substrate having a first conductive layer; an interlayer insulating layer; and a second conductive layer is disclosed, wherein the interlayer insulating layer includes a material whose surface energy is changed by receiving energy, and has a first region which does not include a contact hole and a... Agent: Ricoh Company, Ltd.

20130069084 - Multiple die led and lens optical system: A light emitting device includes a number of light emitting diode dies (LEDs) mounted on a shared submount and covered with a single lens element that includes a corresponding number of lens elements. The LEDs are separated from each other by a distance that is sufficient for lens element to... Agent: Koninklijke Philips Electronics N.v.

20130069085 - Organic light-emitting display device and method of fabricating the same: Disclosed is an organic light-emitting display device capable of preventing the occurrence of cracks at corner regions of an adhesive layer. The organic light-emitting display device includes a first substrate including a plurality of pixels and a second substrate. A thin film transistor (TFT) located at each pixel of the... Agent: Lg Display Co., Ltd.

20130069090 - Organic electroluminescent device, display and lighting instrument: The organic electroluminescent device according to the embodiment has: anode and cathode electrodes placed apart from each other, a red and green light-emitting layer and a blue light-emitting layer, and a spacer layer having a thickness of 3 nm to 20 nm inclusive. The light-emitting layers are placed apart from... Agent: Kabushiki Kaisha Toshiba

20130069099 - Chip-on-board led structure: A chip-on-board (COB) LED structure includes a ceramic substrate, a thermally radiative heat dissipation film, a thermally conductive binding layer, an LED chip, a nano-enamel layer, a circuit layer, a plurality of electrical connection lines, a fluorescent glue and a package resin. The LED chip is bound to the thermally... Agent: Jingdezhen Fared Technology Co., Ltd.

20130069098 - Light emitting device: According to one embodiment, a light emitting device includes a semiconductor light emitting element to emit a first light, a mounting member, first and second wavelength conversion layers and a transparent layer. The first wavelength conversion layer is provided between the element and the mounting member in contact with the... Agent:

20130069096 - Light emitting device and light-emitting system including the same: A light-emitting device having improved light conversion efficiency, a light-emitting system including the same, and fabricating methods of the light-emitting device and the light-emitting system, are provided. The light-emitting device includes one or more light-emitting elements arranged on one surface of a substrate, and a phosphor layer disposed inside or... Agent:

20130069092 - Light-emitting diode and method manufacturing the same: An LED includes a base, first and second electrodes embedded in the base, and an LED chip electrically connected with the first and second electrodes. The first electrode includes a first main body portion and three first branch portions. The second electrode includes a second main body and three second... Agent: Advanced Optoelectronic Technology, Inc.

20130069093 - Optoelectronic device having conductive substrate: An optoelectronic device includes a conductive substrate; a polymer filled groove configured to separate the conductive substrate into a first semiconductor substrate and a second semiconductor substrate; a first front side electrode on the first semiconductor substrate and a second front side electrode on the second semiconductor substrate; and a... Agent:

20130069094 - Package structure of semiconductor light emitting element: A package structure of semiconductor light emitting element is provided. The package structure of semiconductor light emitting element includes a substrate, a light emitting element and a transparent conductive board. A first electrode and a second electrode are disposed on the substrate. The light emitting element is disposed on the... Agent: Lextar Electronics Corporation

20130069091 - Progressive-refractivity antireflection layer and method for fabricating the same: The present invention discloses a progressive-refractivity antireflection layer and a method for fabricating the same to eliminate light reflection occurring in an interface. The present invention is characterized in being fabricated via depositing a first material and a second material, and having a refractivity (neff) gradually varying with a thickness... Agent:

20130069095 - Semiconductor light-emitting element: A semiconductor light-emitting element (1) including: an n-type semiconductor layer (140); a light-emitting layer (150); a p-type semiconductor layer (160); a transparent conductive layer (170) laminated on the p-type semiconductor layer; a reflective film (180) which is composed of a material having optical transparency to light emitted from the light-emitting... Agent: Showa Denko K.k.

20130069097 - Top gate type thin-film transistor, display device, and electronic apparatus: The present invention provides a thin-film transistor manufactured on a transparent substrate having a structure of a top gate type crystalline silicon thin-film transistor in which a light blocking film, a base layer, a crystalline silicon film, a gate insulating film, and a gate electrode film arranged not to overlap... Agent: Nec Lcd Technologies, Ltd.

20130069103 - Light emitting assemblies and portions thereof: Apparatus may be provided including a high power light emitting diode (LED) unit, at least one printed circuit board, and an interfacing portion of a heat sink structure. The high power LED unit includes at least one LED die, at least one first lead and at least one second lead,... Agent:

20130069104 - Light-emitting device and method of manufacturing the light emitting device: Provided is a light emitting device capable of reducing light attenuation within the element and having high light extraction efficiency, and a method of manufacturing the light emitting device. The light emitting device has a light emitting element having a light transmissive member and semiconductor stacked layer portion, electrodes disposed... Agent: Nichia Corporation

20130069101 - Method for manufacturing led and led obtained thereby: A method for manufacturing a light emitting diode is disclosed. Firstly, two leads each including a plateau are provided. A blocking layer is then formed on each plateau. A base is molded on the leads to embed the two leads therein, wherein the two blocking layer are exposed from the... Agent: Advanced Optoelectronic Technology, Inc.

20130069100 - Reusable high power led module and methods thereof: The present invention is directed to a reusable, single-source, high-power LED module utilizing a subset of components that may be quickly replaced in the field without tools when the useable life of an LED chip expires. The reusable LED module may be used with a variety of lamp assemblies to... Agent:

20130069102 - Semiconductor light-emitting device, light-emitting module and method for manufacturing the same: A semiconductor light-emitting device includes a laminated body that is configured to emit light from a main surface thereof, first and second electrodes, each disposed on a surface of the laminated body that is opposite the main surface, a first terminal that is electrically coupled to the first electrode, has... Agent: Kabushiki Kaisha Toshiba

20130069105 - Method for encapsulation of organic electronic devices: The disclosure provides methods and materials for efficiently encapsulating electronic devices such as organic electroluminescent devices. The disclosure also provides electronic devices prepared by such methods. In one embodiment, for example, there is provided a method for preparing an electroluminescent device comprising forming a groove in a substrate and/or forming... Agent:

20130069106 - Silicone resin sheet, producing method thereof, encapsulating sheet, and light emitting diode device: A method for producing a silicone resin sheet includes the steps of forming a first coating layer by applying a first silicone resin composition which contains a first organopolysiloxane and a second organopolysiloxane; forming a precursor layer from the first coating layer by reacting the first organopolysiloxane with the second... Agent: Nitto Denko Corporation

20130069107 - Nitride semiconductor light emitting device and method of manufacturing the same: A nitride semiconductor light emitting device includes: an uneven substrate having an uneven structure in which recesses are formed; a first nitride semiconductor layer of a first conductive type formed on the uneven structure; a first light emitting layer formed on the first nitride semiconductor layer; and a second nitride... Agent: Panasonic Corporation

20130069108 - Power semiconductor module: Disclosed herein is a power semiconductor module including: a circuit board having gate, emitter, and collector patterns formed thereon; a first semiconductor chip mounted on the circuit board, having gate and emitter terminals each formed on one surface thereof, and having a collector terminal formed on the other surface thereof;... Agent: Samsung Electro-mechanics Co., Ltd.

20130069109 - Semiconductor device having trench structure and method of manufacturing the same: According to an embodiment, a trench structure and a second semiconductor layer are provided in a semiconductor device. In the trench structure, a trench is provided in a surface of a device termination portion with a first semiconductor layer of a first conductive type including a device portion and the... Agent: Kabushiki Kaisha Toshiba

20130069110 - Low resistivity contact: Embodiments of a low resistivity contact to a semiconductor structure are disclosed. In one embodiment, a semiconductor structure includes a semiconductor layer, a semiconductor contact layer having a low bandgap on a surface of the semiconductor layer, and an electrode on a surface of the semiconductor contact layer opposite the... Agent: Phononic Devices, Inc.

20130069113 - Compound semiconductor device and method of manufacturing the same: An embodiment of a compound semiconductor device includes: a Si substrate; a Si oxide layer formed over a surface of the Si substrate; a nucleation layer formed over the Si oxide layer, the nucleation layer exposing a part of the Si oxide layer; and a compound semiconductor stacked structure formed... Agent: Fujitsu Limited

20130069115 - Field effect transistor: A field effect transistor includes a nitride semiconductor multilayer structure formed on a substrate, a source electrode, a drain electrode, a gate electrode, an insulating film formed on the nitride semiconductor multilayer structure, and a field plate formed on and in contact with the insulating film, and having an end... Agent: Panasonic Corporation

20130069114 - High-voltage normally-off field effect transistor: A device having a channel with multiple voltage thresholds is provided. The channel can include a first section located adjacent to a source electrode, which is a normally-off channel and a second section located between the first section and a drain electrode, which is a normally-on channel. The device can... Agent: Sensor Electronic Technology, Inc.

20130069112 - Sram cell and method for manufacturing the same: A SRAM cell and a method for manufacturing the same are disclosed. In one embodiment, the SRAM cell may comprise a substrate and a first Fin Field Effect Transistor (FinFET) and a second FinFET formed on the substrate. The first FinFET may comprise a first fin which is formed in... Agent:

20130069111 - Strained semiconductor devices having asymmetrical heterojunction structures and methods for the fabrication thereof: Embodiments of a strained semiconductor device are provided, as are embodiments of a method for fabricating such a strained semiconductor device. In one embodiment, the method includes providing a partially-fabricated semiconductor device including a semiconductor substrate having a source side and a drain side, a gate stack formed on the... Agent: Globalfoundries Inc.

20130069116 - Method of forming a semiconductor structure: A semiconductor structure is disclosed. The semiconductor structure includes a first layer. A second layer is disposed on the first layer and different from the first layer in composition. An interface is between the first layer and the second layer. A third layer is disposed on the second layer. A... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130069117 - Nitride semiconductor device: A nitride semiconductor device includes a substrate, a first Inx1Ga1-x1-y1Aly1N layer, a second Inx2Ga1-x2-y2Aly2N layer, an interlayer insulating film, a source electrode, a drain electrode, a first gate electrode, a Schottky electrode, a second gate electrode, an interconnection layer. The second Inx2Ga1-x2-y2Aly2N layer is provided on a surface of the... Agent: Kabushiki Kaisha Toshiba

20130069118 - Non-volatile semiconductor memory device and method of manufacturing the same: A non-volatile semiconductor memory device according to an embodiment includes a semiconductor substrate and a transistor provided on the semiconductor substrate. The transistor includes a conductive layer, a gate insulating layer, a semiconductor layer, and an oxidation layer. The conductive layer functions as a gate of the transistor. The gate... Agent: Kabushiki Kaisha Toshiba

20130069119 - Solid-state imaging device: Provided is a solid-state imaging device. Two unit cells are prepared each having three pixels and sharing an output circuit. One of the basic blocks is rotated by 180° such that a reset drain is shared, resulting in a 6-pixel 1-cell, and the cells are disposed in a square lattice... Agent: Kabushiki Kaisha Toshiba

20130069121 - Ion sensor, display device, method for driving ion sensor, and method for calculating ion concentration: The present invention provides an ion sensor with which an ion concentration in a sample in which both ions are mixed can be measured with high accuracy, a display device, a method for driving the ion sensor, and a method for calculating an ion concentration. The present invention is an... Agent:

20130069120 - Ph sensor and manufacturing method: Disclosed is a pH sensor comprising a carrier (10) comprising a plurality of conductive tracks and an exposed conductive area (40) defining a reference electrode connected to one of said conductive tracks; a sensing device (30) mounted on the carrier and connected at least one other of said conductive tracks;... Agent: Nxp B.v.

20130069122 - Z²fet field-effect transistor with a vertical subthreshold slope and with no impact ionization: The transistor comprises first and second source/drain electrodes formed in a semiconductor film by N-doped and P-doped areas, respectively. A polarization voltage is applied between the two source/drain electrodes in order to impose to the P-doped electrode a potential higher than that of the N-doped electrode. The transistor comprises first... Agent: Commissariat A L'energie Atomique Et Aux Energies Alternatives

20130069123 - Cmos semiconductor devices having stressor regions and related fabrication methods: Semiconductor devices and related fabrication methods are provided. An exemplary fabrication method involves forming first doped stressor regions in a first region of semiconductor material, forming second doped stressor regions in a second region of semiconductor material after forming the first doped stressor regions, and after forming the second doped... Agent: Globalfoundries Inc.

20130069129 - Compound semiconductor device and method of manufacturing the same: Disclosed is a compound semiconductor device in which a first protective film, which is homogeneous and composed of a single material (SiN, in this case) and therefore has a uniform dielectric constant, continuously covers a compound semiconductor layer; an oxygen-containing protective component, which is a second protective film composed of... Agent: Fujitsu Limited

20130069127 - Field effect transistor and fabrication method thereof: A method for fabricating a field effect transistor according to an exemplary embodiment of the present disclosure includes: forming an active layer, a cap layer, an ohmic metal layer and an insulating layer on a substrate; forming multilayered photoresists on the insulating layer; patterning the multilayered photoresists to form a... Agent: Electronics And Telecommunications Research Institute

20130069126 - Germanium-based nmos device and method for fabricating the same: An embodiment of the invention provides a germanium-based NMOS device and a method for fabricating the same, which relates to fabrication process technology of an ultra-large-scale-integrated (ULSI) circuit. The germanium-based NMOS device has two dielectric layer interposed between a metal source/drain and a substrate. The bottom dielectric layer includes a... Agent: Peking University

20130069124 - Mosfet integrated circuit with uniformly thin silicide layer and methods for its manufacture: An MOSFET device having a Silicide layer of uniform thickness, and methods for its fabrication, are provided. One such method involves depositing a metal layer over wide and narrow contact trenches on the surface of a silicon semiconductor substrate. Upon formation of a uniformly thin amorphous intermixed alloy layer at... Agent: Globalfoundries Inc.

20130069128 - Semiconductor device and manufacturing method of the same: According to the embodiments, a semiconductor device includes a first semiconductor layer which has a projection extending along a surface of the first semiconductor layer. A gate electrode is over a surface of the projection with an intervening gate insulator. A second semiconductor layer on a portion of the side... Agent:

20130069125 - Semiconductor device, electrostatic discharge protection device and manufacturing method thereof: A semiconductor device, an electrostatic discharge protection device and manufacturing method thereof are provided. The electrostatic discharge protection device includes a gate, a gate dielectric layer, an N-type source region, an N-type drain region, an N-type doped region and a P-type doped region. The gate dielectric layer is disposed on... Agent: Macronix International Co., Ltd.

20130069130 - Solid state imaging device: According to one embodiment, a solid state imaging device includes a semiconductor substrate having a first surface on a light incident side and a second surface on a side opposite to the light incident side, a photodiode in the semiconductor substrate, a functional layer which covers the entire photodiode on... Agent:

20130069131 - Integrated circuit decoupling capacitor arrangement: A decoupling capacitor arrangement is provided for an integrated circuit. The apparatus includes a plurality of decoupling capacitor arrays electrically connected in parallel with one another. Each of the arrays includes a plurality of decoupling capacitors and a current limiting element. The decoupling capacitors of each array are electrically connected... Agent:

20130069132 - Semiconductor storage device: Probability of malfunction of a semiconductor storage device is reduced. A shielding layer is provided between a memory cell array (e.g., a memory cell array including a transistor formed using an oxide semiconductor material) and a peripheral circuit (e.g., a peripheral circuit including a transistor formed using a semiconductor substrate),... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130069133 - Semiconductor device: A semiconductor device, includes: a semiconductor substrate; a first conductivity type well and a second conductivity type well; a first active area; a second active area; a first well contact layer; a plurality of first source/drain layers; a first gate insulating film; a first gate electrode; a second well contact... Agent: Kabushiki Kaisha Toshiba

20130069134 - Memory including transistors with double floating gate structures: In a memory of an embodiment, first and second P-channel transistors are formed on a first semiconductor region, and each of the first and second P-channel transistors has a structure formed by stacking a first insulating film, a first floating gate, a second insulating film, a second floating gate, a... Agent:

20130069135 - Semiconductor device and method of manufacturing the same: A semiconductor device includes an interelectrode insulating film formed between a charge storage layer and a control electrode layer. The interelectrode insulating film is formed in a first region above an upper surface of an element isolation insulating film, a second region along a sidewall of the charge storage layer,... Agent: Kabushiki Kaisha Toshiba

20130069136 - Single-gate non-volatile flash memory cell, memory device and manufacturing method thereof: A single-gate non-volatile flash memory cell, a memory device including the memory cell, and a manufacturing method thereof are provided. The memory cell includes a semiconductor structure and a movable switch (200), wherein the semiconductor structure includes a floating-gate structure, and an interlayer dielectric layer (130) with an opening (1204)... Agent:

20130069137 - Memory array with a pair of memory-cell strings to a single conductive pillar: An array of memory cells has a conductive pillar and a plurality of first and second memory cells coupled in series by the conductive pillar. Each first memory cell has a respective portion of a first charge trap adjacent to the conductive pillar and a respective first control gate adjacent... Agent: Micron Technology, Inc.

20130069138 - Ultrahigh density vertical nand memory device and method of making thereof: Monolithic, three dimensional NAND strings include a semiconductor channel, at least one end portion of the semiconductor channel extending substantially perpendicular to a major surface of a substrate, a plurality of control gate electrodes having a strip shape extending substantially parallel to the major surface of the substrate, the blocking... Agent: Sandisk Technologies Inc.

20130069140 - Method for manufacturing nonvolatile semiconductor memory device and nonvolatile semiconductor memory device: According to one embodiment, a method is disclosed for manufacturing a nonvolatile semiconductor memory device. The method can includes forming a semiconductor layer containing an impurity and forming a pattern on the semiconductor layer. The method can include forming first insulating layers in a stripe shape from a surface of... Agent: Kabushiki Kaisha Toshiba

20130069139 - Nonvolatile semiconductor memory device and method for manufacturing same: According to one embodiment, a nonvolatile semiconductor memory device includes a substrate, an electrode layer provided above the substrate, a first insulating layer provided on the electrode layer, a stacked body provided on the insulating layer, a memory film, a channel body layer, a channel body connecting portion and a... Agent: Kabushiki Kaisha Toshiba

20130069141 - Vertically foldable memory array structure: A vertically foldable memory array structure is provided, comprising: a memory module distributed in columns and rows, comprising: a drain selection transistor; a bottom connecting line and a source selection transistor; and a plurality of memory cell transistors connected between the drain selection transistor and the bottom connecting line and... Agent:

20130069142 - Semiconductor device and method of manufacturing the same: A semiconductor device includes an element isolation region having an element isolation insulating film therein; an active region delineated by the element isolation region; agate insulating film formed in the active region; a charge storage layer above the gate insulating film; and an interelectrode insulating film. The interelectrode insulating film... Agent: Kabushiki Kaisha Toshiba

20130069149 - Method for producing semiconductor device and semiconductor device: A method for producing a semiconductor device includes the steps of forming first and second pillar-shaped semiconductors on a substrate at the same time so as to have the same height; forming a first semiconductor layer by doping a bottom region of the first pillar-shaped semiconductor with a donor or... Agent: Unisantis Electronics Singapore Pte. Ltd.

20130069145 - Power semiconductor device: A power semiconductor device according to one embodiment includes a first electrode, a semiconductor substrate provided on the first electrode, and an insulating member. A terminal trench is made in the upper surface of the semiconductor substrate in a region including a boundary between a cell region and a terminal... Agent: Kabushiki Kaisha Toshiba

20130069150 - Semiconductor device and manufacturing method of the same: According to one embodiment, a semiconductor device includes a semiconductor layer; a plurality of semiconductor regions; second semiconductor region; a first electrode being positioned between the plurality of first semiconductor regions, the first electrode contacting with the semiconductor layer, each of the plurality of first semiconductor regions, and the second... Agent: Kabushiki Kaisha Toshiba

20130069148 - Semiconductor device and manufacturing method thereof: According to one embodiment, a semiconductor device includes an element region partitioned by an isolation region in a semiconductor substrate, and a source region and a drain region formed in a surface layer of the element region by being isolated by a gate trench along a predetermined direction across the... Agent: Kabushiki Kaisha Toshiba

20130069146 - Semiconductor device and method for manufacturing same: According to one embodiment, a method for manufacturing a semiconductor device includes: forming a plurality of trenches; forming a gate insulating film; burying a gate electrode; burying an insulating member; projecting the insulating member; forming a base layer; forming a mask film; forming a first semiconductor layer; forming a carrier... Agent: Kabushiki Kaisha Toshiba

20130069147 - Semiconductor device and method for manufacturing same: According to an embodiment, a semiconductor device includes a semiconductor layer of a first conductive type, a base region of a second conductive type provided on the semiconductor layer and a first contact region of a second conductive type provided on the base region. The device includes a gate electrode... Agent: Kabushiki Kaisha Toshiba

20130069144 - Trench transistor: A method of forming a device is disclosed. A substrate defined with a device region is provided. A buried doped region is formed in the substrate in the device region. A gate is formed in a trench in the substrate in the device region. A channel of the device is... Agent: Globalfoundries Singapore Pte. Ltd.

20130069143 - Trench type power transistor device and method of fabricating the same: The present invention provides a trench type power transistor device including a semiconductor substrate, at least one transistor cell, a gate metal layer, a source metal layer, and a second gate conductive layer. The semiconductor substrate has at least one trench. The transistor cell includes a first gate conductive layer... Agent: Sinopower Semiconductor Inc.

20130069151 - Semiconductor device: According to one embodiment, a semiconductor device includes: a substrate; a first conductive portion extending in a first direction perpendicular to a major surface of the substrate; a second conductive portion extending in the first direction; a semiconductor portion provided between the first and the second conductive portions and including... Agent: Kabushiki Kaisha Toshiba

20130069152 - 3d structured memory devices and methods for manufacturing thereof: A 3D structured nonvolatile semiconductor memory devices and methods for manufacturing are disclosed. One such device includes an n+ region at a source/drain region; a p+ region at the source/drain region; and a diffusion barrier material between the n+ region and the p+ region. The n+ region is substantially isolated... Agent: Micron Technology, Inc.

20130069153 - High voltage device and manufacturing method thereof: The present invention discloses a high voltage device and a manufacturing method thereof. The high voltage device includes: a substrate, having an isolation structure for defining a device region; a drift region located in the device region, wherein from top view, the drift region includes multiple sub-regions separated from one... Agent: Richtek Technology Corporation, R.o.c.

20130069154 - Semiconductor chip integrating high and low voltage devices: The present invention is directed to a semiconductor chip comprising a high voltage device and a low voltage device disposed thereon. The chip may be formed in several different configurations. For example, the semiconductor chip may include a NPN bipolar transistor, PNP bipolar transistor, a diode, an N channel DMOS... Agent: Alpha And Omega Semiconductor Incorporated

20130069156 - Semiconductor device: A semiconductor device formed on a silicon-on-insulator substrate includes a gate electrode, a gate insulation film, a drain diffusion region, a drift region, a body region, a plurality of source diffusion regions, and a plurality of charge collection diffusion regions. The source diffusion regions and charge collection diffusion regions are... Agent: Lapis Semiconductor Co., Ltd.

20130069155 - Termination for superjunction vdmosfet: A termination for silicon superjunction VDMOSFET comprises heavily doped N-type silicon substrate which also works as drain region; drain metal is disposed on the back surface of the heavily doped N-type silicon substrate; an N-type silicon epitaxial layer is disposed on the heavily doped N-type silicon substrate; P-type silicon columns... Agent: Suzhou Poweron Ic Design Co., Ltd

20130069157 - Semiconductor chip integrating high and low voltage devices: The present invention is directed to a semiconductor chip comprising a high voltage device and a low voltage device disposed thereon. The chip may be formed in several different configurations. For example, the semiconductor chip may include a NPN bipolar transistor, PNP bipolar transistor, a diode, an N channel DMOS... Agent: Alpha And Omega Semiconductor Incorporated

20130069158 - Power semiconductor device: A power semiconductor device includes a high resistance epitaxial layer having a first pillar region and a second pillar region as a drift layer. The first pillar region includes a plurality of first pillars of the first conductivity type and a plurality of second pillars of the second conductivity type... Agent: Kabushiki Kaisha Toshiba

20130069159 - Field effect transistor device with raised active regions: A method for fabricating a field effect transistor device includes forming a gate stack on a substrate, forming a spacer on the substrate, adjacent to the gate stack, forming a first portion of an active region on the substrate, the first portion of the active region having a first facet... Agent: International Business Machines Corporation

20130069161 - Integrated circuit structure having selectively formed metal cap: Methods of forming an integrated circuit structure utilizing a selectively formed and at least partially oxidized metal cap over a gate, and associated structures. In one embodiment, a method includes providing a precursor structure including a transistor having a metal gate; forming an etch stop layer over an exposed portion... Agent: International Business Machines Corporation

20130069163 - Multi-die package: A multi-die package has a plurality of leads and first and second semiconductor dies in superimposition and bonded together defining a die stack. The die stack has opposed first and second sides, with each of the first and second semiconductor dies having gate, drain and source regions, and gate, drain... Agent:

20130069162 - Optical proximity correction for active region design layout: The present disclosure provides an integrated circuit design method. In an example, a method includes receiving an integrated circuit design layout that includes an active region feature, a contact feature, and an isolation feature, wherein a portion of the active region feature is disposed between the contact feature and the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130069160 - Trench isolation structure: A trench isolation structure and method of forming the trench isolation structure are disclosed. The method includes forming a shallow trench isolation (STI) structure having an overhang and forming a gate stack. The method further includes forming source and drain recesses adjacent to the STI structure and the gate stack.... Agent: International Business Machines Corporation

20130069165 - Active inductor: In one embodiment, a circuit, which comprises a resistor and a pMOS or cMOS transistor, has the characteristic of an inductor and produces an inductive impedance that operates over a substantially full range of a direct-current bias.... Agent: Fujitsu Limited

20130069164 - Intrinsic channel fet: A novel semiconductor transistor is presented. The semiconductor structure has a MOSFET like structure, with the difference that the device channel is formed in an intrinsic region, so as to effectively decrease the impurity and surface scattering phenomena deriving from a high doping profile typical of conventional MOS devices. Due... Agent:

20130069166 - Method for fabricating semiconductor device: A semiconductor device includes a substrate including a first region and a second region, a gate dielectric layer formed on the substrate, and a metal electrode layer formed on the gate dielectric layer and including a compound of carbon and nitrogen, wherein a metal electrode formed from the metal electrode... Agent:

20130069167 - Sram cell and method for manufacturing the same: A SRAM cell and a method for manufacturing the same are disclosed. In one embodiment, the SRAM cell may comprise: a semiconductor layer; and a first Fin Field Effect Transistor (FinFET) and a second FinFET formed on the semiconductor layer, wherein the first FinFET comprises a first fin formed by... Agent: Institute Of Microelectronics, Chinese Academy Of Sciences

20130069168 - Sram layout for double patterning: An integrated circuit with a SAR SRAM cell with power routed in metal-1. An integrated circuit with a SAR SRAM cell that has power routed in Metal-1 and has metal-1 and metal-2 integrated circuit and SAR SRAM cell patterns which are DPT compatible. A process of forming an integrated circuit... Agent: Texas Instruments Incorporated

20130069171 - Controlled fin-merging for fin type fet devices: A placement of non-planar FET devices is disclosed, which includes non-planar devices that have electrodes, and the electrodes contain fins and an epitaxial layer which merges the fins together. The non-planar devices are so placed that their gate structures are in a parallel configuration separated from one another by a... Agent: International Business Machines Corporation

20130069169 - Eco logic cell and design change method using eco logic cell: The function of logic cells may be changed by altering their metal routing. Logic cells altered in this manner may be used to correct, substitute, or otherwise alter the operation of logic blocks or scan paths without completely re-working an integrated circuit. The process may be referred to as an... Agent: Samsung Electronics Co., Ltd.

20130069170 - Illumination and design rule method for double patterned slotted contacts: An integrated circuit with long rectangular contacts to active where the active contact length is 2 times or more larger than the width and with short rectangular contacts to transistor gates where the transistor gate contact length is less than about 3 times the width. A method for forming an... Agent: Texas Instruments Incorporated

20130069172 - Semiconductor device and method for fabricating the same: A semiconductor device and a method for fabricating the same are provided. The semiconductor device includes a gate structure, a source region and a drain region. The gate structure is disposed on a substrate. The source and drain regions disposed at respective sides of the gate structure include a boron-doped... Agent: United Microelectronics Corp.

20130069173 - Power semiconductor device and fabrication method thereof: s

20130069174 - Contact for high-k metal gate device: A method of making an integrated circuit includes providing a substrate with a high-k dielectric and providing a polysilicon gate structure over the high-k dielectric. A doping process is performed on the substrate adjacent to the polysilicon gate structure, after which the polysilicon gate structure is removed and replaced with... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130069175 - Semiconductor device, method for manufacturing the same, power supply apparatus and high-frequency amplification unit: A semiconductor device includes a compound semiconductor multilayer structure, a fluorine-containing barrier film that covers a surface of the compound semiconductor multilayer structure, and a gate electrode that is arranged over the compound semiconductor multilayer structure with the fluorine-containing barrier film placed the gate and the compound semiconductor multilayer structure.... Agent: Fujitsu Limited

20130069176 - Integrated circuit with sensor and method of manufacturing such an integrated circuit: An integrated circuit package for an integrated circuit having one or more sensor elements in a sensor element area of the circuit. An encapsulation covers bond wires but leaves an opening over the sensor element area. A protection layer is provided over the integrated circuit over which the encapsulation extends,... Agent: Nxp B.v.

20130069178 - Method of manufacturing a device with a cavity: The invention relates to a micro-device with a cavity, the micro-device comprising a substrate, the method comprising steps of: A) providing the substrate, having a surface and comprising a sacrificial oxide region at the surface; B) covering the sacrificial oxide region with a porous layer being permeable to a vapor... Agent: Taiwan Semiconductor Manufacturing Company, Ltd

20130069177 - Micro electronic device: A method for fabricating a MEMS resonator is provided. A stacked main body including a silicon substrate, a plurality of metallic layers and an isolation layer is formed and has a first etching channel extending from the metallic layers into the silicon substrate. The isolation layer is filled in the... Agent: Pixart Imaging Inc.

20130069179 - Acoustic sensor, acoustic transducer, microphone using the acoustic transducer, and method for manufacturing the acoustic transducer: In an acoustic sensor, a conductive vibrating membrane and a fixed electrode plate are disposed above a silicon substrate with an air gap provided therebetween, and the substrate has an impurity added to a surface thereof. A microphone includes an acoustic transducer; and an acquiring section that acquires a change... Agent: Omron Corporation

20130069180 - Electro-acoustic conversion device mount substrate, microphone unit, and manufacturing method therefor: The disclosed substrate (12) has an electro-acoustic conversion element (11), which converts sound signals into electric signals, mounted thereon. Furthermore, the substrate is provided with: a mounting surface (12a) in which an opening (121) covered by the electro-acoustic conversion element (11) is formed; an intra-substrate space (122) connected to the... Agent: Funai Electric Co., Ltd.

20130069181 - Encapsulation structure for silicon pressure sensor: An encapsulation structure for silicon pressure sensor including a case and a stem is proposed. The case and the stem are connected with a cavity therebetween. A sealing pad and a pressure sensitive silicon chip are provided in the said cavity. The sealing pad is placed under the silicon chip... Agent: Denso Corporation

20130069182 - Magnetoresistive effect element, magnetic memory, and magnetoresistive effect element manufacturing method: According to one embodiment, a magnetoresistive effect element includes a first magnetic film having magnetic anisotropy and an invariable magnetization direction in a direction perpendicular to a film plane, a second magnetic film having magnetic anisotropy and a variable magnetization direction in the direction perpendicular to the film plane, and... Agent:

20130069184 - Magnetoresistive element and producing method thereof: According to one embodiment, a magnetoresistive element comprises a first magnetic layer, in which a magnetization direction is variable and is perpendicular to a film surface, a tunnel barrier layer that is formed on the first magnetic layer, and a second magnetic layer that is formed on the tunnel barrier... Agent: Kabushiki Kaisha Toshiba

20130069183 - Method for forming a self-aligned hard mask for contact to a tunnel junction: A magnetic memory cell having a self-aligned hard mask for contact to a magnetic tunnel junction is provided. For example, a magnetic memory cell includes a magnetic storage element formed on a semiconductor substrate, and a hard mask that is self-aligned with the magnetic storage element. The hard mask includes... Agent: International Business Machines Corporation

20130069185 - Magnetic memory element and nonvolatile memory device: According to one embodiment, a magnetic memory element includes a stacked body including first and second stacked units stacked with each other. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer provided therebetween. The second stacked unit includes third and fourth ferromagnetic layers and... Agent: Kabushiki Kaisha Toshiba

20130069186 - Magnetoresistive element and method of manufacturing the same: According to one embodiment, a magnetoresistive element comprises a first magnetic layer having a magnetization direction invariable and perpendicular to a film surface, a tunnel barrier layer formed on the first magnetic layer, and a second magnetic layer formed on the tunnel barrier layer and having a magnetization direction variable... Agent: Kabushiki Kaisha Toshiba

20130069187 - Photoelectric conversion device: It is an object to provide a photoelectric conversion device with high photoelectric conversion efficiency. The photoelectric conversion device includes an electrode layer, and a light absorbing layer located on the electrode layer. The light absorbing layer is comprised of a plurality of stacked semiconductor layers containing a chalcopyrite-based compound... Agent: Kyocera Corporation

20130069189 - Bonding pad structure and fabricating method thereof: A bonding pad structure is used in an integrated circuit device. The integrated circuit device includes a semiconductor substrate with a first surface and a second surface. The bonding pad structure includes a dielectric layer, a conductor structure, a pad opening and an isolation trench. The dielectric layer is formed... Agent: United Microelectronics Corporation

20130069188 - Dual-facing camera assembly: In some embodiments of the invention, a system having an array of frontside illuminated (FSI) imaging pixels is bonded to a system having an array of backside illuminated (BSI) imaging pixels, creating a camera assembly with a minimal size (e.g., a reduced thickness compared to prior art solutions). An FSI... Agent: Omnivision Technologies, Inc.

20130069190 - Image sensor and method for fabricating the same: An image sensor comprises a substrate, a plurality of photoelectric transducer devices, an interconnect structure, at least one dielectric isolator and a back-side alignment mark. The substrate has a front-side surface and a back-side surface opposite to the front-side surface. The interconnect structure is disposed on the front-side surface. The... Agent: United Microelectronics Corporation

20130069191 - Novel semiconductor and optoelectronic devices: An integrated device, the device including a first crystalline layer covered by an oxide layer, a second crystalline layer overlying the oxide layer, wherein the first and second crystalline layers are image sensor layers, and the device includes a third crystalline layer, wherein the third crystalline layer includes single crystal... Agent:

20130069192 - Hybrid circuit structure and partial backfill method for improving thermal cycling reliability of same: A method of improving thermal cycling reliability for a hybrid circuit structure requires providing at least two circuit layers, aligning two of the circuit layers vertically such that their respective circuit elements have a precise and well-defined spatial relationship, and providing an adhesive material which wicks into a portion of... Agent: Teledyne Scientific & Imaging, LLC

20130069193 - Intermediate layer for stacked type photoelectric conversion device, stacked type photoelectric conversion device and method for manufacturing stacked type photoelectric conversion device: An intermediate layer for a stacked type photoelectric conversion device including an n-type silicon-based stacked body including an n-type crystalline silicon-based semiconductor layer and an n-type silicon-based composite layer, and a p-type silicon-based stacked body including a p-type crystalline silicon-based semiconductor layer and a p-type silicon-based composite layer, the n-type... Agent:

20130069194 - Graphene-based thermopile: Graphene-based thermopiles are provided. The graphene-based thermopiles may include thermocouples having one or more graphene strips that may be polarized to adjust their Seebeck coefficients. The polarized graphene strips may have larger Seebeck coefficients than the materials conventionally used in thermopile devices. As a result, the graphene-based thermopiles may generate... Agent: Excelitas Canada Inc.

20130069195 - Semiconductor device and fabrication method thereof: According to one embodiment, a fabrication method for a semiconductor device includes: injecting an ion into a first substrate; joining the first substrate and a second substrate; irradiating a microwave to agglomerate the ion in a planar state in a desired position in the first substrate and form an agglomeration... Agent:

20130069196 - Structure and method to minimize regrowth and work function shift in high-k gate stacks: The present invention provides a semiconductor structure comprising high-k material portions that are self-aligned with respect to the active areas in the semiconductor substrate and a method of fabricating the same. The high-k material is protected from oxidation during the fabrication of the semiconductor structure and regrowth of the high-k... Agent: International Business Machines Corporation

20130069197 - Semiconductor device and method of forming rf fem with lc filter and ipd filter over substrate: A semiconductor device has a substrate and RF FEM formed over the substrate. The RF FEM includes an LC low-pass filter having an input coupled for receiving a transmit signal. A Tx/Rx switch has a first terminal coupled to an output of the LC filter. A diplexer has a first... Agent: Stats Chippac, Ltd.

20130069202 - Electrode treatments for enhanced dram performance: A method for fabricating a dynamic random access memory capacitor is disclosed. The method may comprise depositing a first titanium nitride (TiN) electrode; creating a first layer of titanium dioxide (TiO2) on the first TiN electrode; depositing a dielectric material on the first layer of titanium dioxide; and depositing a... Agent: Intermolecular, Inc.

20130069199 - Metal insulator metal (mim) capacitor structure: A MIM capacitor includes a dielectric cap that enhances performance and reduces damage to MIM insulators during manufacture. A cavity is formed in an insulative substrate, such as a back end of line dielectric layer, and a first metal layer and an insulator layer are conformally deposited. A second metal... Agent: International Business Machines Corporation

20130069200 - Method of forming a robust, modular mim capacitor with improved capacitance density: A method of forming a capacitor structure comprises: forming a doped polysilicon layer on an underlying dielectric layer; forming a dielectric stack on the doped polysilicon layer; forming a contact hole in the dielectric stack to expose a surface region of the doped polysilsicon layer; forming a conductive contact plug... Agent:

20130069198 - Semiconductor structure and method for making same: An embodiment may be a semiconductor structure, comprising; a workpiece having a front side and a back side; and a capacitor disposed in the workpiece, the capacitor including a bottom electrode electrically coupled to a back side of said workpiece. In an embodiment, the bottom electrode may form a conductive... Agent:

20130069201 - Yttrium and titanium high-k dielectric films: This disclosure provides (a) methods of making an oxide layer (e.g., a dielectric layer) based on yttrium and titanium, to have a high dielectric constant and low leakage characteristic and (b) related devices and structures. An oxide layer having both yttrium and titanium may be fabricated either as an amorphous... Agent: Intermolecular, Inc.

20130069203 - Gettering method for dielectrically isolated devices: A silicon on insulater (SOI) wafer is provided. A dielectric layer is formed on an active silicon substrate of the wafer. The dielectric layer is patterned and etched to expose selected portions of the silicon substrate. Impurities are then introduced into the exposed portions of the silicon substrate to act... Agent: Stmicroelectronics Pte. Ltd.

20130069204 - Method and apparatus to control surface texture modification of silicon wafers for photovoltaic cell devices: A method and apparatus to modify the surface structure of a silicon substrate or deposited silicon layer in a controllable manner using gas only in an atmospheric environment, suitable for making photovoltaic (PV) wafer based devices. The method and apparatus comprising the steps of disposing the substrate or deposited layer... Agent: Ultra High Vacuum Solutions Ltd 1/a Nines Engine

20130069206 - Semiconductor device, semiconductor wafer and manufacturing method of semiconductor device: A semiconductor device includes wiring layers formed over a semiconductor wafer, a via-layer between the wiring layers, conductive films in the wiring layers, and a via-plug in the via-layer connecting the conductive films of the wiring layers above and below, a scribe region at an outer periphery of a chip... Agent: Fujitsu Semiconductor Limited

20130069205 - Semiconductor wafer and processing method therefor: A semiconductor wafer and a method which are capable of reducing chippings or cracks generated during the die sawing process. The semiconductor wafer comprises a plurality of dies formed on the semiconductor wafer in row and column directions and separated from each other by scribe lane areas, and a passivation... Agent: Semiconductor Manufacturing International (beijing) Corporation

20130069207 - Method for producing a deposit and a deposit on a surface of a silicon substrate: A deposit and a method for producing a deposit on a surface of a silicon substrate. The deposit comprises aluminum oxide, and the method comprises in any order the alternating steps of a) introducing into a reaction space one of water and ozone as a precursor for oxygen, b) introducing... Agent: Beneq Oy

20130069208 - Group iii-v device structure having a selectively reduced impurity concentration: There are disclosed herein various implementations of a semiconductor structure and method. The semiconductor structure comprises a substrate, a transition body over the substrate, and a group III-V intermediate body having a bottom surface over the transition body. The semiconductor structure also includes a group III-V device layer over a... Agent: International Rectifier Corporation

20130069209 - Semiconductor device and method for manufacturing semiconductor device: A semiconductor device and a method for manufacturing the semiconductor device are provided. A semiconductor substrate has a surface on which an abrasion trace is formed, and a dopant diffusion region includes a portion extending in the direction at an angle within the range of −5° to +5° with respect... Agent: Sharp Kabushiki Kaisha

20130069211 - Device including a semiconductor chip and metal foils: A device including a semiconductor chip and metal foils. One embodiment provides a device including a semiconductor chip having a first electrode on a first face and a second electrode on a second face opposite to the first face. A first metal foil is attached to the first electrode of... Agent: Infineon Technologies Ag

20130069210 - Power module package: Disclosed herein is a power module package including: a first substrate having one surface and the other surface; a second substrate contacting one side of one surface of the first substrate; and a first lead frame contacting the other side of one surface of the first substrate. The power module... Agent: Samsung Electro-mechanics Co., Ltd.

20130069212 - Semiconductor device: A semiconductor device in which a flip chip is mounted which can change a potential of a specific terminal without changing a design of a package external. The semiconductor device includes an IC chip having a bump for an external terminal, and a package in which the IC chip is... Agent: Renesas Electronics Corporation

20130069213 - Power module package: Disclosed herein is a power module package including: a first substrate having one surface and the other surface; a second substrate contacting one surface of the first substrate; a third substrate contacting one side of the other surface of the first substrate; a first lead frame contacting the other side... Agent: Samsung Electro-mechanics Co., Ltd.

20130069214 - Lead frame, semiconductor device, method of manufacturing lead frame, and method of manufacturing semiconductor device: A lead frame or semiconductor device and a method of manufacturing the same in which where the unit lead frame of each semiconductor device after dicing was located in a lead frame before dicing can be known without an additional manufacturing step. The lead frame includes a plurality of unit... Agent: Renesas Electronics Corporation

20130069216 - Base plate and semiconductor device: According to one embodiment, the base plate includes first and a second faces that are opposed to each other; the second face has a contoured rear surface, and the first area is set in the center of the plate. There is a second area with via holes in the peripheral... Agent: Kabushiki Kaisha Toshiba

20130069215 - Semiconductor device: A semiconductor device includes a first semiconductor chip, a buffer body, and a terminal lead. The first semiconductor chip includes a first electrode and a second electrode provided on a side opposite to the first electrode. The first semiconductor chip is configured to allow a current to flow between the... Agent: Kabushiki Kaisha Toshiba

20130069217 - Semiconductor device and electrode terminal: According to one embodiment, a semiconductor device includes a substrate, a semiconductor chip mounted on the substrate, an electrode electrically connected to the semiconductor chip, an electrode terminal having a first terminal at one end portion and a second terminal at the other end portion, and a case covering the... Agent: Kabushiki Kaisha Toshiba

20130069218 - High density package interconnect with copper heat spreader and method of making the same: The integrated circuit packaging techniques of the disclosed embodiments utilize a thermally conductive heat sink to partially enclose an integrated circuit. The heat sink is separated from the integrated circuit by a substrate that is conformally positioned into a recess in the heat sink, enabling the heat sink to transfer... Agent: Stmicroelectronics Asia Pacific Pte Ltd.

20130069220 - Method of forming contacts for a memory device: The present invention is generally directed to a method of forming contacts for a memory device. In one illustrative embodiment, the method includes forming a layer of insulating material above an active area of a dual bit memory cell, forming a hard mask layer above the layer of insulating material,... Agent: Micron Technology, Inc.

20130069219 - Semiconductor package and method for manufacturing the semiconductor package: A semiconductor package includes a first semiconductor chip including a target circuit surface and a side surface, a first sealing insulating layer including a first surface positioned toward the target circuit surface and configured to seal the target circuit surface and the side surface, at least one wiring layer formed... Agent: Shinko Electric Industries Co., Ltd.

20130069230 - Electronic assembly apparatus and associated methods: An apparatus includes a substrate, and first and second die. The first die is assembled above the substrate. The first die includes electronic circuitry. The second die is assembled above the substrate. The second die includes electronic circuitry. The apparatus further includes first and second interconnects. The first interconnect includes... Agent:

20130069223 - Flash memory card without a substrate and its fabrication method: Disclosed is a flash memory card without a substrate, primarily comprising a memory chip component, a controller chip disposed on the memory chip, and an encapsulant encapsulating both chips. Formed on an active surface and a back surface of the memory chip component are a first RDL (redistribution layer) and... Agent:

20130069228 - Flip-chip package structure and forming method thereof: A flip-chip package structure comprising a substrate, a chip, a bump structure and a solder resist is provided. The substrate has a circuit layer disposed on the surface thereof. The chip comprises a central region and two edge regions disposed on the two sides of the central region. The bump... Agent:

20130069224 - Integrated circuit packaging system with routable underlayer and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing a routable layer having a column; mounting an integrated circuit structure in direct contact with the column; and forming a gamma connector to electrically connect the column to the integrated circuit structure.... Agent:

20130069229 - Package substrate and semiconductor package including the same: A package substrate may include an insulating substrate, a dummy pad, a signal pad and a plug. The dummy pad may be formed on an upper surface of the insulating substrate. The signal pad may be formed on the upper surface of the insulating substrate. The signal pad may have... Agent: Samsung Electronics Co., Ltd.

20130069222 - Semiconductor device and method of forming a reconfigured stackable wafer level package with vertical interconnect: A semiconductor device has a carrier with a semiconductor die mounting area. A plurality of conductive posts is formed in a periphery of the semiconductor die mounting area and in the carrier. A first portion of the carrier is removed to expose a first portion of the plurality of conductive... Agent: Stats Chippac, Ltd.

20130069221 - Semiconductor device and method of forming conductive protrusions over conductive pillars or bond pads as fixed offset vertical interconnect structures: A semiconductor device has a semiconductor die mounted to a substrate. A plurality of conductive pillars is formed over a semiconductor die. A plurality of conductive protrusions is formed over the conductive pillars. Bumps are formed over the conductive protrusions and conductive pillars. Alternatively, the conductive protrusions are formed over... Agent: Stats Chippac, Ltd.

20130069225 - Semiconductor device and method of forming protection and support structure for conductive interconnect structure: A semiconductor device has a semiconductor wafer with a plurality of contact pads. A first insulating layer is formed over the semiconductor wafer and contact pads. A portion of the first insulating layer is removed, exposing a first portion of the contact pads, while leaving a second portion of the... Agent: Stats Chippac, Ltd.

20130069227 - Semiconductor device and method of forming protection and support structure for conductive interconnect structure: A semiconductor device has a semiconductor wafer with a plurality of contact pads. A first insulating layer is formed over the semiconductor wafer and contact pads. A portion of the first insulating layer is removed, exposing a first portion of the contact pads, while leaving a second portion of the... Agent: Stats Chippac, Ltd.

20130069226 - Semiconductor package having interposer: A semiconductor package includes a first structural body having a first surface and a second surface which faces away from the first surface, and formed with first connection members on the first surface; a second structural body placed over the first structural body, and formed with second connection members on... Agent: Hynix Semiconductor Inc.

20130069231 - Solder cap bump in semiconductor package and method of manufacturing the same: A semiconductor package with improved height uniformity of solder cap bumps therein is disclosed. In one embodiment, the semiconductor package includes a semiconductor substrate comprising a plurality of pads spacedly disposed on a top surface of the substrate, and a passivation layer formed on top of the pads, wherein a... Agent: Chipmos Technologies Inc.

20130069232 - Damascene process for aligning and bonding through-silicon-via based 3d integrated circuit stacks: Through-silicon-via (TSV) based 3D integrated circuit (3D IC) stacks are aligned, bonded and electrically interconnected using a transparent alignment material in the TSVs until the wafers are bonded. Embodiments include providing a first wafer having a first device layer and at least one first TSV filled with a conductive material,... Agent: Globalfoundries Singapore Pte. Ltd.

20130069233 - Reverse damascene process: The present disclosure relates to a method of forming a back-end-of-the-line metallization layer. The method is performed by forming a plurality of freestanding metal layer structures (i.e., metal layer structures not surrounded by a dielectric material) on a semiconductor substrate within an area defined by a patterned photoresist layer. A... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20130069234 - Structure and method for tunable interconnect scheme: The present disclosure provides one embodiment of a method to form an interconnect structure. The method includes forming a first dielectric material layer on a substrate; patterning the first dielectric material layer to form a plurality of vias therein; forming a metal layer on the first dielectric layer and the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130069235 - Bonding pad structure for semiconductor devices: A bonding pad structure includes a semiconductor substrate having thereon a plurality of inter-metal dielectric (IMD) layers comprising at least a topmost IMD layer; a bondable metal pad layer disposed on a surface of the topmost IMD layer within a pad forming region; a passivation layer covering a periphery of... Agent:

20130069236 - Efficient semiconductor device cell layout utilizing underlying local connective features: Provided are semiconductor device cells, methods for forming the semiconductor device cells and a layout style for the semiconductor device cells. The device cells may be repetitive cells used throughout an integrated circuit. The layout style utilizes an area at the polysilicon level that is void of polysilicon and which... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20130069237 - Platinum-containing constructions, and methods of forming platinum-containing constructions: Some embodiments include constructions which have platinum-containing structures. In some embodiments, the constructions may have a planarized surface extending across the platinum-containing structures and across metal oxide. In some embodiments, the constructions may have a planarized surface extending across the platinum-containing structures, across a first material retaining the platinum-containing structures,... Agent: Micron Technology, Inc.

20130069238 - Semiconductor device and a method for manufacturing a semiconductor device: A first wiring is disposed over a semiconductor substrate. A first via is disposed over the first wiring. Further, the bottom surface of the first via is in contact with the first wiring. A first insulation layer is disposed over the semiconductor substrate, and is in contact with at least... Agent: Renesas Electronics Corporation

20130069242 - Arrangement of through-substrate vias for stress relief and improved density: A semiconductor device structure for a three-dimensional integrated circuit has a semiconductor substrate having a plurality of through-substrate vias provided in the substrate, wherein three or more of the plurality of through-substrate vias are arranged in a hexagonal packing array with respect to their design-rule circle.... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20130069243 - Chip module and method for fabricating a chip module: The chip module includes a semiconductor chip having a first contact element on a first main face and a second contact element on a second main face. The semiconductor chip is arranged on a corner in such a way that the first main face of the semiconductor chip faces the... Agent: Infineon Technologies Ag

20130069240 - Integrated circuit packaging system with dual side mold and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing a substrate; mounting a top integrated circuit on a first side of the substrate; mounting a bottom integrated circuit on a second side of the substrate; forming a top encapsulation over the top integrated circuit and a bottom... Agent:

20130069246 - Methods of forming electronic devices: Methods of forming electronic devices are provided. The methods involve alkaline treatment of photoresist patterns and allow for the formation of high density resist patterns. The methods find particular applicability in semiconductor device manufacture.... Agent: Rohm And Haas Electronic Materials LLC

20130069244 - Rectangular via for ensuring via yield in the absence of via redundancy: A rectangular via extending between interconnects in different metallization levels can have a planform with a width equal to the width of the interconnects and a length equal to twice the width and can be aligned along a long dimension with a length of the upper interconnect. In an integrated... Agent: Texas Instruments Incorporated

20130069241 - Semiconductor device and method of forming semiconductor package using panel form carrier: A semiconductor device has a first insulating layer formed over a carrier. A first conductive layer is formed over the first insulating layer. A second insulating layer is formed over the first conductive layer. Vias are formed through the second insulating layer. A second conductive layer is formed over the... Agent: Stats Chippac, Ltd.

20130069239 - Semiconductor device and method of forming stacked semiconductor die and conductive interconnect structure through an encapsulant: A semiconductor device has a first conductive layer formed over a first substrate. A second conductive layer is formed over a second substrate. A first semiconductor die is mounted to the first substrate and electrically connected to the first conductive layer. A second semiconductor die is mounted to the second... Agent: Stats Chippac, Ltd.

20130069245 - Semiconductor package and method for manufacturing the semiconductor package: A semiconductor package includes a first semiconductor chip including a target circuit surface and a side surface, a first sealing insulating layer including a first surface positioned toward the target circuit surface and a second surface positioned opposite to the first surface, the first sealing insulating layer sealing the target... Agent: Shinko Electric Industries Co., Ltd.

20130069247 - Apparatus for stacked electronic circuitry and associated methods: An apparatus includes a substrate and a pair of die that include electronic circuitry. The substrate includes a cavity. One of the die is disposed in the cavity formed in the substrate. The other die is disposed above the first die and is electrically coupled to the first die.... Agent:

20130069248 - Bonding method for three-dimensional integrated circuit and three-dimensional integrated circuit thereof: The present invention discloses a bonding method for a three-dimensional integrated circuit and the three-dimensional integrated circuit thereof. The bonding method comprises the steps of: providing a substrate; depositing a film layer on the substrate; providing a light source to light onto the film layer to form a graphic structure;... Agent: National Chiao Tung University

20130069249 - Semiconductor device: A memory card has a wiring board, four memory chips stacked on a main surface of the wiring board, and a controller chip and an interposer mounted on a surface of the memory chip of the uppermost layer. The memory chips are stacked on the surface of the wiring board... Agent: Renesas Electronics Corporation

20130069250 - Die substrate with reinforcement structure: Various semiconductor chip package substrates with reinforcement and methods of making the same are disclosed. In one aspect, a method of manufacturing is provided that includes providing a package substrate that has a first side and a second side opposite to the first side. The first side has a central... Agent:

20130069251 - Wiring substrate, method of manufacturing the same, and semiconductor device: A wiring substrate includes: a substrate layer made of glass or silicon and including: a first surface formed with a first hole; and a second surface formed with a second hole and being opposite to the first surface, wherein the first hole is communicated with the second hole; a connection... Agent: Shinko Electric Industries Co., Ltd.

20130069252 - Semiconductor device and method of forming semiconductor die with active region responsive to external stimulus: A semiconductor device has a first semiconductor die including an active region formed on a surface of the first semiconductor die. The active region of the first semiconductor die can include a sensor. An encapsulant is deposited over the first semiconductor die. A conductive layer is formed over the encapsulant... Agent: Stats Chippac, Ltd.

20130062588 - Nonvolatile semicocductor memory device and manufacturing method thereof: A nonvolatile semiconductor memory device has a first wire, a second wire, and a memory cell electrically coupled to the first wire at one end and to the second wire at the other end. The memory cell has a resistance change layer to store information by changing a resistance value... Agent: Renesas Electronics Corporation

20130062589 - Resistance change memory: A resistance change memory includes a first conductive line extending in a first direction, a second conductive line extending in a second direction which is crossed to the first direction, a cell unit including a memory element and a rectification connected in series between the first and second conductive lines,... Agent:

20130062587 - Resistive switching devices having alloyed electrodes and methods of formation thereof: In accordance with an embodiment of the present invention, a resistive switching device comprises a bottom electrode, a switching layer disposed over the bottom electrode, and a top electrode disposed over the switching layer. The top electrode comprises an alloy of a memory metal and an alloying element. The top... Agent: Adesto Technologies Corp.

20130062586 - Semiconductor device and manufacturing method thereof: This invention discloses a semiconductor device and its manufacturing method. According to the method, a stop layer is deposited on a step-shaped bottom electrode, and then a first insulating layer is deposited through a high aspect ratio process. A first chemical mechanical polishing is performed until the stop layer. A... Agent: Semiconductor Manufacturing International (beijing) Corporation

20130062590 - Method for manufacturing nonvolatile storage device and nonvolatile storage device: According to one embodiment, a method for manufacturing a nonvolatile storage device. The device includes a plurality of first conductive layers each extending in a first direction, a plurality of second conductive layers each extending in a second direction and spaced from the first layers, and memory cells each provided... Agent: Kabushiki Kaisha Toshiba

20130062591 - Case including semiconductor nanocrystals, and optoelectronic device including the same: A case including a case main body, a matrix including a semiconductor nanocrystal, the matrix disposed in the case main body, and a sealant disposed on the case main body, wherein the sealant has a gas permeability of about 1 cubic centimeter at standard temperature and pressure per centimeter per... Agent: Samsung Electronics Co., Ltd.

20130062592 - Light emitting diode (led) dice having wavelength conversion layers and methods of fabrication: A light emitting diode (LED) die includes a wavelength conversion layer having a base material, and a plurality of particles embedded in the base material including wavelength conversion particles, and reflective particles. A method for fabricating light emitting diode (LED) dice includes the steps of mixing the wavelength conversion particles... Agent: Semileds Optoelectronics Co., Ltd.

20130062593 - Frontside-illuminated barrier infrared photodetector device and methods of fabricating the same: Frontside-illuminated barrier infrared photodetector devices and methods of fabrication are disclosed. In one embodiment, a frontside-illuminated barrier infrared photodetector includes a transparent carrier substrate, and a plurality of pixels. Each pixel of the plurality of pixels includes an absorber layer, a barrier layer on the absorber layer, a collector layer... Agent: L-3 Communications Cincinnati Electronics Corporation

20130062594 - Method of isolating nanowires from a substrate: A method is provided. The method includes forming a plurality of nanowires on a top surface of a substrate and forming an oxide layer adjacent to a bottom surface of each of the plurality of nanowires, wherein the oxide layer is to isolate each of the plurality of nanowires from... Agent:

20130062598 - Compounds having semiconducting properties and related compositions and devices: Disclosed are new compounds having semiconducting properties. Such compounds can be processed in solution-phase at a temperature of less than about 50° C. into thin film semiconductors that exhibit high carrier mobility and/or good current modulation characteristics.... Agent:

20130062596 - Display, method of manufacturing the same, and electronic unit: A display includes: a first light-emitting device disposed in a first region on a substrate and including a transfer organic layer; a second light-emitting device disposed in a second region adjacent to the first region on the substrate and not including a transfer organic layer; and a level difference provided... Agent: Sony Corporation

20130062597 - Nitrogen-containing heteroaromatic ring compound: wherein Y is an oxygen atom or a sulfur atom, M is a substituted or unsubstituted nitrogen-containing heteroaromatic group, and Ar2 is a substituted aromatic hydrocarbon group having 6 to 18 ring carbon atoms, a substituted or unsubstituted monocyclic heteroaromatic group having 5 or 6 ring atoms, a dibenzofuran ring... Agent: Idemitsu Kosan Co., Ltd.

20130062599 - Organic light emitting devices having graded emission regions: Organic light-emitting devices having an emissive region comprising a hole transport material and an electron transport material in varying material concentration across the devices. Variation of the concentration of the hole transport material and electron transport material is provided continuously or in a graded manner, as opposed to using multiple... Agent:

20130062595 - Photodiode: A photodiode according to example embodiments includes an anode, a cathode, and an intrinsic layer between the anode and the cathode. The intrinsic layer includes a P-type semiconductor and an N-type semiconductor, and composition ratios of the P-type semiconductor and the N-type semiconductor vary within the intrinsic layer depending on... Agent: Samsung Electronics Co., Ltd.

20130062601 - Oxide semiconductor layer and semiconductor device: An object is to provide an oxide semiconductor layer having a novel structure which is preferably used for a semiconductor device. Alternatively, another object is to provide a semiconductor device using an oxide semiconductor layer having the novel structure. An oxide semiconductor layer includes an amorphous region which is mainly... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130062602 - Oxide semiconductor transistors and methods of manufacturing the same: Transistors and methods of manufacturing the same. A transistor may be an oxide thin film transistor (TFT) with a self-aligned top gate structure. The transistor may include a gate insulating layer between a channel region and a gate electrode that extends from two sides of the gate electrode. The gate... Agent: Samsung Electronics Co., Ltd.

20130062600 - Semiconductor device and manufacturing method thereof: The contact resistance between an oxide semiconductor film and a metal film is reduced. A transistor that uses an oxide semiconductor film and has excellent on-state characteristics is provided. A semiconductor device capable of high-speed operation is provided. In a transistor that uses an oxide semiconductor film, the oxide semiconductor... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130062604 - Photodetector with controllable spectral response: A photodetector includes a semiconductor substrate having an irradiation zone configured to generate charge carriers having opposite charge carrier types in response to an irradiation of the semiconductor substrate. The photodetector further includes an inversion zone generator configured to operate in at least two operating states to generate different inversion... Agent: Infineon Technologies Ag

20130062605 - Semiconductor chip: In a case where a semiconductor chip is mounted over a first package, 80 pads are coupled to 80 terminals of the package, and in a case where the semiconductor chip is mounted over a second package, 100 pads are coupled to 100 terminals of the second package. An internal... Agent: Renesas Electronics Corporation

20130062603 - Test structure and calibration method: A test structure for measuring a Micro-Electro-Mechanical System (MEMS) cavity height structure and calibration method. The method includes forming a sacrificial cavity material over a plurality of electrodes and forming an opening into the sacrificial cavity material. The method further includes forming a transparent or substantially transparent material in the... Agent: International Business Machines Corporation

20130062606 - Thin film transistor and method of manufacturing the same: A thin film transistor includes a substrate with a recess formed therein, a channel region received in the recess, a gate insulating layer formed on the channel region, a gate electrode formed on the gate insulating layer, and a source region and a drain region connecting the channel region, respectively.... Agent: Hon Hai Precision Industry Co., Ltd.

20130062607 - Semiconductor device: A protection circuit for efficiently reducing the influence of ESD and a semiconductor device in which the influence of ESD is efficiently reduced are provided. The protection circuit includes at least two protection diodes. Each protection diode is a transistor including two gates facing each other with a semiconductor layer... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130062608 - Thin-film transistor and electronic unit: A thin-film transistor includes: a gate electrode; a semiconductor layer separated from the gate electrode with a separation insulating layer in between; and a source electrode and a drain electrode that are connected with the semiconductor layer and are separated from each other. Between the source electrode and the drain... Agent: Sony Corporation

20130062616 - Gan-based field effect transistor: A GaN-based field effect transistor (MOSFET) is comprised of a channel layer comprised of p-type GaN, an electron supply layer, a surface layer having band gap energy smaller than that of said electron supply layer, sequentially laminated on a substrate, and recess section is formed by removing a part of... Agent: Furukawa Electric Co., Ltd.

20130062614 - Group iii-v enhancement mode transistor with thyristor gate: An apparatus includes an enhancement mode transistor having multiple Group III-V layers above a substrate and a gate above the Group III-V layers. The gate includes multiple layers of material that form at least a portion of a thyristor. The multiple layers of material may include a first p-type layer... Agent: Texas Instruments Incorporated

20130062609 - Iii-n fet on silicon using field suppressing reo: A III-N on silicon substrate with enhanced breakdown voltage including a rare earth oxide structure deposited on the silicon substrate and a layer of single crystal III-N semiconductor material deposited on the rare earth oxide structure. The rare earth oxide has a dielectric constant greater (approximately twice) than the III-N... Agent:

20130062610 - Lattice matched crystalline reflector: A virtual substrate structure with a lattice matched crystalline reflector for a light emitting device including a single crystal rare earth oxide layer deposited on a silicon substrate and substantially crystal lattice matched to the silicon substrate. A reflective layer of single crystal electrically conductive material is deposited on the... Agent:

20130062613 - Light emitting device: According to one embodiment, a light emitting device includes a first lead, a light emitting element, a second lead and a molded body. The light emitting element is fixed on the first lead. The second lead is provided away from the first lead and electrically connected to the light emitting... Agent: Kabushiki Kaisha Toshiba

20130062617 - Light emitting diode structure with transparent conductive heat dissipation film: An LED structure includes a sapphire substrate, an epitaxy light emitting structure, a transparent conductive heat dissipation film, a first metal contact layer and a second metal contact layer. The transparent conductive heat dissipation film is electrically conductive and thermally radiative, and has a surface microscopic crystalline structure. The heat... Agent: Jingdezhen Fared Technology Co., Ltd.

20130062618 - Light emitting diode with thermoradiation heat-dissipation layers: A light emitting diode (LED) includes a sapphire substrate, a first thermoradiation heat-dissipation layer, a second thermoradiation heat-dissipation layer, an epitaxy light emitting structure, a first metal contact layer and a second metal contact layer. The first and second thermoradiation heat-dissipation layers are fabricated from a mixture of metal and... Agent: Jingdezhen Fared Technology Co., Ltd.

20130062612 - Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer: According to one embodiment, a nitride semiconductor device includes a foundation layer, a first stacked intermediate layer, and a functional layer. The foundation layer includes an AlN buffer layer formed on a substrate. The first stacked intermediate layer is provided on the foundation layer. The first stacked intermediate layer includes... Agent: Kabushiki Kaisha Toshiba

20130062611 - Semiconductor device: A semiconductor device of an embodiment includes: a first semiconductor layer made of AlXGa1-XN (0<x<1) or InyAl1-yN (0≦y≦1); a first semiconductor region, an insulating film, and an anode electrode that are formed on the same plane of the first semiconductor layer, and are made of undoped, n-type, or p-type GaN;... Agent: Kabushiki Kaisha Toshiba

20130062615 - Solid state lighting devices with selected thermal expansion and/or surface characteristics, and associated methods: Solid state lighting (SSL) devices and methods are disclosed. A particular method includes forming an SSL formation structure having a CTE, selecting a first material of an interlayer structure to have a first material CTE greater than the substrate CTE, and selecting a second material based at least in part... Agent: Micron Technology, Inc.

20130062619 - Edge termination structure employing recesses for edge termination elements: Elements of an edge termination structure, such as multiple concentric guard rings, are effectively doped regions in a drift layer. To increase the depth of these doped regions, individual recesses may be formed in a surface of the drift layer where the elements of the edge termination structure are to... Agent: Cree, Inc.

20130062621 - Iii-n device structures having a non-insulating substrate: Embodiments of the present disclosure includes a III-N device having a substrate layer, a first III-N material layer on one side of the substrate layer, a second III-N material layer on the first III-N material layer, and a barrier layer disposed on another side of the substrate layer, the barrier... Agent: Transphorm Inc.

20130062628 - Methods for the epitaxial growth of silicon carbide: A method for the epitaxial growth of SiC is described which includes contacting a surface of a substrate with hydrogen and HCl, subsequently increasing the temperature of the substrate to at least 1550° C. and epitaxially growing SiC on the surface of the substrate. A method for the epitaxial growth... Agent: Semisouth Laboratories, Inc.

20130062626 - Power semiconductor module: Disclosed is a power semiconductor module which includes a unipolar type switching device using a wide bandgap semiconductor (wide bandgap semiconductor switching device) and an insulated gate bipolar transistor using a silicon semiconductor (Si-IGBT) connected in parallel, in which a chip area of the wide bandgap semiconductor switching device is... Agent: Kabushiki Kaisha Toshiba

20130062620 - Schottky diode employing recesses for elements of junction barrier array: The present disclosure generally relates to a Schottky diode that has a substrate, a drift layer provided over the substrate, and a Schottky layer provided over an active region of the substrate. A junction barrier array is provided in the drift layer just below the Schottky layer. The elements of... Agent: Cree, Inc.

20130062625 - Semiconductor device: Disclosed is a semiconductor device including: a semiconductor substrate; a field effect transistor formed on the semiconductor substrate; and a diode forming area adjacent to a forming area of the field effect transistor, wherein the diode forming area is insulated from the forming area of the field effect transistor on... Agent: Kabushiki Kaisha Toshiba

20130062622 - Semiconductor device and method for manufacturing the same: A semiconductor device according to the present embodiment includes a semiconductor substrate having a first n-type silicon carbide layer and a second n-type silicon carbide layer, a first p-type impurity region formed in the n-type silicon carbide layer, a first n-type impurity region of 4H—SiC structure formed in the n-type... Agent: Kabushiki Kaisha Toshiba

20130062624 - Semiconductor device and method for manufacturing the same: A semiconductor device according to an embodiment includes a silicon carbide, a metal silicide formed on the silicon carbide and including a first layer and a second layer having a carbon ratio lower than that of the first layer, and a metallic electrode formed on the metal silicide, wherein the... Agent: Kabushiki Kaisha Toshiba

20130062623 - Semiconductor device and method of manufacturing the same: Disclosed is a semiconductor device including: a first electrode formed of a conductive material; a p-type first silicon carbide (SiC) semiconductor section and an n-type second SiC semiconductor section 230, connected to the first electrode, containing carbon (C) such that a surface density distribution has a peak at a first... Agent: Kabushiki Kaisha Toshiba

20130062629 - Silicon carbide semiconductor device and method for manufacturing same: A substrate is provided with a main surface having an off angle of 5° or smaller relative to a reference plane. The reference plane is a {000-1} plane in the case of hexagonal system and is a {111} plane in the case of cubic system. A silicon carbide layer is... Agent: Sumitomo Electric Industries, Ltd.

20130062627 - Stress regulated semiconductor devices and associated methods: Stress regulated semiconductor devices and associated methods are provided. In one aspect, for example, a stress regulated semiconductor device can include a semiconductor layer, a stress regulating interface layer including a carbon layer formed on the semiconductor layer, and a heat spreader coupled to the carbon layer opposite the semiconductor... Agent:

20130062635 - Display and electronic unit: A display includes: a first region including first pixels configured of a single color; a second region including second pixels configured of a plurality of colors different from the single color, the second pixels having an organic layer including a common light emitting layer; and a dividing wall separating the... Agent: Sony Corporation

20130062633 - Led array having embedded led and method therefor: A light emitting array comprises a submount having a top surface and a bottom surface, and at least one LED at least partially embedded within the submount. The top surface of the submount is in contact with at least a side surface of the at least one LED. The submount... Agent:

20130062632 - Light emitting device package and lighting system including the same: Disclosed are a light emitting device package and a lighting system in which the light emitting device package includes a first cavity in a first region of the body, a second cavity in a second region of the body, first and second lead frames spaced apart from each other in... Agent: Lg Innotek Co., Ltd.

20130062631 - Light emitting structure, light emitting module, and light emitting device: A light emitting module includes a carrier unit, a substrate unit, and a light emitting unit. The carrier unit includes at least one carrier body, and the carrier body has a mounting portion. The substrate unit includes at least one bendable substrate. The bendable substrate includes a plurality of substrate... Agent: Lustrous Green Technology Of Lighting

20130062630 - Overlay circuit structure for interconnecting light emitting semiconductors: A system and method for packaging light emitting semiconductors (LESs) is disclosed. An LES device is provided that includes a heatsink and an array of LES chips mounted on the heatsink and electrically connected thereto, with each LES chip comprising connection pads and a light emitting area configured to emit... Agent:

20130062634 - Solid state light source module and array thereof: A solid state light source array including a transparent substrate and N rows of solid state light emitting element series is provided. Each row of the solid state light emitting element series includes M solid state light emitting elements connected in series, wherein N, M are integrals and N≧1, M≧2.... Agent: Lextar Electronics Corporation

20130062637 - Apparatus, method to enhance color contrast in phosphor-based solid state lights: The efficiency and color contrast of a lighting device may be improved by using wavelength shifting material, such as a phosphor, to absorb less desired wavelengths and transmit more desired wavelengths. A double-notch reflective filter may pass desired wavelengths such as red and green, while returning or reflecting less desired... Agent: Express Imaging Systems, LLC

20130062636 - Led device having two led dies separated by a dam: An LED device comprises a substrate, a circuit, two LED dies, a dam and a reflector. The dam divides the substrate into a first area and a second area, wherein one of the two LED dies is disposed on the first area and the other is disposed on the second... Agent: Advanced Optoelectronic Technology, Inc.

20130062651 - Carrier for a light emitting device: A semiconductor light emitting device is mounted on a support substrate. The support substrate is disposed in an opening in a carrier. In some embodiments, the support substrate is a ceramic tile and the carrier is a low cost material with a lateral extent large enough to support a lens... Agent: Koninklijke Philips Electronics N.v.

20130062652 - Led devices having lenses and methods of making same: Disclosed herein are LED devices having lenses and methods of making the devices. The LED devices are made using an optical layer comprising a plurality of lens features. The optical layer is disposed relative to the LED die such that at least one LED die is optically coupled to at... Agent: 3m Innovative Properties Company

20130062641 - Led lamp: A LED lamp is disclosed which has a plurality of light unit, each of the light unit has at least one flat metal lead for heat dissipation and the lower part of the metal lead is mounted on a heat sink for a further heat dissipation.... Agent: Uniled Lighting Taiwan Inc.

20130062650 - Led package and mold of manufacturing the same: The present disclosure provides a light emitting diode (LED) package, which includes a first substrate with electrodes disposed on a top thereof and a second substrate with an LED chip disposed on a top thereof. The LED chip is connected with the electrodes via wires. A first package layer is... Agent: Advanced Optoelectronic Technology, Inc.

20130062642 - Led package device: An LED package device comprises a substrate, a first electrode, a second electrode, a reflector, an encapsulation layer and an LED die. The substrate includes a top surface and a bottom surface opposite to the top surface, wherein the first and the second electrodes are located on the top surface... Agent: Advanced Optoelectronic Technology, Inc.

20130062643 - Light emitting device: According to one embodiment, a light emitting device includes: a first lead, a recess being provided in the first lead; a light emitting element fixed to a bottom surface of the recess via a conductive paste at a back surface on an opposite side to a light emitting surface of... Agent: Kabushiki Kaisha Toshiba

20130062645 - Light emitting device: Embodiments provide a light emitting device comprising a support member, a light emitting structure disposed on the support member, the light emitting structure comprising a first semiconductor layer comprises a first and second regions, a second semiconductor layer disposed on the second region, and an active layer between the first... Agent:

20130062647 - Light emitting devices including wavelength converting material: Light-emitting devices and associated methods are provided. The light emitting devices can have a wavelength converting material-coated emission surface.... Agent: Luminus Devices, Inc.

20130062640 - Light emitting diode (led) package having wavelength conversion member and wafer level fabrication method: A light emitting diode (LED) package includes a substrate and a light emitting diode (LED) die on the substrate configured to emit electromagnetic radiation in a first spectral region. The (LED) package also includes a dielectric layer on the (LED) die and a wavelength conversion member on the dielectric layer... Agent: Semileds Optoelectronics Co., Ltd.

20130062654 - Light extraction sheet, organic electroluminescence element and illumination device: Disclosed is a novel light extraction sheet which not only improves light extraction efficiency but suppresses color change with the angle of observation, an organic EL dement employing this light extraction sheet, and art illumination device employing the element. The light extraction sheet is featured in that it comprises a... Agent: Konica Minolta Holdings, Inc.

20130062649 - Light-emitting device: Disclosed is a light-emitting device having a wide luminous-intensity distribution characteristic with a simple structure. The light-emitting device includes a resin package in which an LED chip, a first inner portion of a first lead terminal, and a second inner portion of a second lead terminal are accommodated and which... Agent:

20130062648 - Light-emitting device and light-emitting device manufacturing method: A light-emitting device includes: a light-emitting element that generates ultraviolet light; a first wavelength conversion layer placed on the light-emitting element, the first wavelength conversion layer including a plurality of types of phosphor particles dispersed in a transparent resin, each of the plurality of types of phosphor particles converting the... Agent: Olympus Corporation

20130062639 - Method for fabricating light emitting diode (led) devices having output with selected characteristics: A method for fabricating a light emitting diode (LED) device includes the steps of forming (or providing) a plurality of LED dice, forming a plurality of wavelength conversions layers, and then evaluating at least one electromagnetic radiation emission characteristic of each LED die and at least one color characteristic of... Agent: Semileds Optoelectronics Co., Ltd.

20130062653 - Methods for packaging light emitting devices and related microelectronic devices: A method for forming a light emitting device includes providing a light emitting diode (LED) configured to emit light of a first color and providing a plurality of semi-spherical lenses made of a silicone material that contains no phosphor material. Each of the lenses has a layer of phosphor material... Agent: Achrolux Inc.

20130062638 - Semiconductor light emitting device: A semiconductor light emitting device has a semiconductor laminate including first and second conductivity type semiconductor layers respectively providing first and second main surfaces and an active layer. The semiconductor laminate is divided into first and second regions. At least one contact hole is formed to pass through the active... Agent:

20130062644 - Semiconductor light emitting device and method for manufacturing same: According to one embodiment, a method for manufacturing a semiconductor light emitting device includes: preparing a metal plate including first and second frames, the first frames being disposed alternately with the second frames to be apart from the second frames, a light emitting element being affixed to each of the... Agent: Kabushiki Kaisha Toshiba

20130062646 - System and method for fabricating light emitting diode (led) dice with wavelenth conversion layers: A system for fabricating light emitting diode (LED) dice includes a wavelength conversion layer contained on a substrate on an adhesive layer configured to have reduced adhesiveness upon exposure to a physical energy, such as electromagnetic radiation or heat. The system also includes a curing apparatus configured to reduce the... Agent: Semileds Optoelectronics Co., Ltd.

20130062655 - High thermal conductivity and low degradation die attach with dual adhesive: A package for a light source, a semiconductor device, and methods of manufacturing the same are disclosed. In particular, a Light Emitting Diode (LED) dice is attached to a bonding pad of the light source package by two discrete types of different adhesives. One of the adhesives may be curable... Agent: Avago Technologies EcbuIP(singapore) Pte. Ltd.

20130062657 - Light emitting diode structure and manufacturing method thereof: A light-emitting diode structure is disclosed. A substrate has a first semiconductor layer, a light-emitting layer and a second semiconductor layer formed thereon. The first and second semiconductor layers are of opposite conductivity types. A first contact electrode is disposed between the first semiconductor layer and the substrate, and has... Agent: Lextar Electronics Corporation

20130062658 - Light-emitting device and manufacturing method: A light-emitting device comprises a substrate, a light-emitting layer, a wire formed on the substrate and supplying electric power to the light-emitting layer; a transition metal oxide layer formed on the substrate and over the wire; a bank formed on the transition metal oxide layer defining an opening over the... Agent: Panasonic Corporation

20130062656 - Thermally enhanced optical package: A thermally enhanced optical package includes a heat conducting module configured to dissipate the heat generated from an optical device, a plurality of insulating pads disposed on a heat conducting substrate, and at least one electrical conducting pad disposed on the insulating pads. The heat conducting module includes a heat... Agent: Inpaq Technology Co., Ltd.

20130062660 - Group 13 nitride crystal and substrate thereof: A group 13 nitride crystal has a hexagonal crystal structure and at least contains nitrogen atom and at least a kind of metal atoms selected from a group consisting of B, Al, Ga, In, and Tl. The group 13 nitride crystal includes a first region located at an inner side... Agent: Ricoh Company, Ltd.

20130062659 - Organic light emitting diode display: An organic light emitting diode display includes: a base film made of plastic; a thin film transistor and an organic light emitting diode formed on the base film; and a carbon nanotube thin film disposed among the base film, the thin film transistor, and the organic light emitting diode.... Agent: Samsung Mobile Dispaly Co., Ltd.

20130062661 - Integrated circuit device: An integrated circuit device includes a semiconductor substrate and a first transistor and a second transistor constructed in the semiconductor substrate. The first transistor has a first operating voltage higher than a second operating voltage of a second transistor. The first transistor includes a first drain structure, a first source... Agent: United Microelectronics Corporation

20130062662 - Semiconductor device: In a semiconductor device, at least one of the ratio (collector contact area/collector active area) in the High Side IGBT and the ratio (contact area on p+ region/p30 region area) is higher than the ratio in the Low Side IGBT. Thus, it is possible to develop without substantial changes... Agent: Renesas Electronics Corporation

20130062663 - Dichromatic photodiodes: A dichromatic photodiode and method for dichromatic photodetection are disclosed. A wide bandgap junction comprises a lattice matched junction operable to detect a first light spectrum. A narrow bandgap junction is coupled to the wide bandgap junction, and comprises a photodiode structure. The narrow bandgap junction is operable to detect... Agent:

20130062665 - Method for producing a iii/v si template: A method for producing a monolithic template comprises a Si wafer with a layer of a III/V semiconductor epitaxially applied to its surface. The III/V semiconductor has a lattice constant differing by less than 10% from that of Si. The method includes epitaxially growing a layer of a III/V semiconductor... Agent: Nasp Iii/v Gmbh

20130062664 - Semiconductor device and manufacturing method of semiconductor device: A semiconductor device includes: a channel layer made of a compound semiconductor; a barrier layer provided above the channel layer and made of a compound semiconductor in which an energy band on a carrier travel side in a junction with respect to the channel layer is farther from an intrinsic... Agent: Sony Corporation

20130062666 - Compound semiconductor device and method for manufacturing the same: A compound semiconductor device includes a substrate; and a compound semiconductor layer disposed over the substrate, wherein the compound semiconductor layer includes a first region having first conductivity-type carriers generated by activating a first impurity and also includes a second region having carriers at lower concentration as compared to the... Agent: Fujitsu Limited

20130062667 - Enhancement/depletion phemt device and manufacturing method thereof: An embodiment of the present invention concerns a layered epitaxial structure for enhancement/depletion PHEMT devices, an enhancement/depletion PHEMT device and a method for manufacturing an enhancement/depletion PHEMT device that finds advantageous, but not exclusive, application in the manufacturing of integrated circuits operating at millimetre-wave and microwave frequencies.... Agent: Selex Sistemi Integrati S.p.a.

20130062668 - Heterojunction bipolar transistors with reduced base resistance: Heterojunction bipolar transistors with reduced base resistance, as well as fabrication methods for heterojunction bipolar transistors and design structures for BiCMOS integrated circuits. The heterojunction bipolar transistor includes a conductive layer between the intrinsic base and the extrinsic base. The conductive layer is comprised of a conductive material, such as... Agent: International Business Machines Corporation

20130062670 - Device with engineered epitaxial region and methods of making same: An engineered epitaxial region compensates for short channel effects of a MOS device by providing a blocking layer to reduce or prevent dopant diffusion while at the same time reducing or eliminating the side effects of the blocking layer such as increased leakage current of a BJT device and/or decreased... Agent: Taiwan Semiconductor Manfacturing Company, Ltd.

20130062671 - Nitride semiconductor device: A nitride semiconductor device includes a first semiconductor layer, a second semiconductor layer, a conductive substrate, a first electrode, a second electrode, and a control electrode. The second semiconductor layer is directly bonded to the first semiconductor layer. The conductive substrate is provided on and electrically connected to the first... Agent: Kabushiki Kaisha Toshiba

20130062672 - Semiconductor device and method for manufacturing the same: The present disclosure provides a semiconductor device and a method for manufacturing the same. The semiconductor device comprises: a semiconductor layer comprising a plurality of semiconductor sub-layers; and a plurality of fins formed in the semiconductor layer and adjoining the semiconductor layer, wherein at least two of the plurality of... Agent:

20130062669 - Silicide formation and associated devices: Improved silicide formation and associated devices are disclosed. An exemplary method includes providing a semiconductor material having spaced source and drain regions therein, forming a gate structure interposed between the source and drain regions, performing a gate replacement process on the gate structure to form a metal gate electrode therein,... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130062673 - Solid-state imaging device: In a solid-state imaging device, a pixel has a first island-shaped semiconductor (P11) formed on a substrate (1) and a drive output circuit has second island-shaped semiconductors (4a to 4c) formed on the substrate at the same height as that of the first island-shaped semiconductor (P11). The first island-shaped semiconductor... Agent: Unisantis Electronics Singapore Pte. Ltd.

20130062674 - Spin transfer torque random access memory: A spin transfer torque random access memory includes a substance unit, a source line unit, an insulation unit, a transistor unit, a MTJ unit, and a bit line unit. The substance unit includes a substance layer. The source line unit includes a plurality of source lines formed inside the substance... Agent: Inotera Memories, Inc.

20130062675 - Pillars for vertical transistors: In order to form a more stable silicon pillar which can be used for the formation of vertical transistors in DRAM cells, a multi-step masking process is used. In a preferred embodiment, an oxide layer and a nitride layer are used as masks to define trenches, pillars, and active areas... Agent: Micron Technology, Inc.

20130062676 - Flash memory structure: A flash memory structure includes a semiconductor substrate, a gate dielectric layer on the semiconductor substrate, a floating gate on the gate dielectric layer, a capacitor dielectric layer conformally covering the floating gate, wherein the capacitor dielectric layer forms a top surface and four sidewall surfaces; and an isolated conductive... Agent:

20130062677 - Self-aligned bottom plate for metal high-k dielectric metal insulator metal (mim) embedded dynamic random access memory: A memory device, and a method of forming a memory device, is provided that includes a capacitor with a lower electrode of a metal semiconductor alloy. In one embodiment, the memory device includes a trench present in a semiconductor substrate including a semiconductor on insulating (SOI) layer on top of... Agent: International Business Machines Corporation

20130062678 - Recessed access device for a memory: Semiconductor memory devices having recessed access devices are disclosed. In some embodiments, a method of forming the recessed access device includes forming a device recess in a substrate material that extends to a first depth in the substrate that includes a gate oxide layer in the recess. The device recess... Agent: Micron Technology, Inc.

20130062679 - Device: A device includes a semiconductor region surrounded with the isolation region and includes a first active region, a channel region and a second active region arranged in that order in a first direction. A first side portion of the first active region and a second side portion of the second... Agent: Elpida Memory, Inc.

20130062680 - Semiconductor memory and manufacturing method of the same: According to one embodiment, a semiconductor memory includes a memory cell in a memory cell array which is provided in a semiconductor substrate and which includes a first active region surrounded by a first isolation insulator, a transistor in a transistor region which is provided in the semiconductor substrate and... Agent:

20130062684 - Gate stack structure and fabricating method used for semiconductor flash memory device: The invention relates to a gate stack structure suitable for use in a semiconductor flash memory device and its fabricating method. The gate stack structure is fabricated on a p-type 100 silicon substrate, which also includes the following components in sequence from bottom to top: a charge tunnel layer of... Agent: Fudan Univeristy

20130062682 - Semiconductor memory and manufacturing method thereof: According to one embodiment, a semiconductor memory includes a memory cell provided in a first active area surrounded with a first isolation insulating film, a first transistor provided in a second active area surrounded with a second isolation insulating film, a shield gate electrode on the second isolation insulating film.... Agent:

20130062681 - Semiconductor memory device and method for manufacturing the same: According to one embodiment, a semiconductor memory device includes a stacked body, a semiconductor pillar, an insulating film, and a charge storage film. The stacked body includes a plurality of electrode films stacked with an inter-layer insulating film provided between the electrode films. The semiconductor pillar pierces the stacked body.... Agent: Kabushiki Kaisha Toshiba

20130062683 - Semiconductor memory device and method of manufacturing the same: According to one embodiment, a method of manufacturing a semiconductor memory device is provided. In the method, a laminated body in which a first silicon layer, a first sacrificial layer, a second silicon layer, and a second sacrificial layer are laminated in turn is formed. A first insulating film is... Agent:

20130062685 - Nonvolatile semiconductor storage device: According to one embodiment, a control gate is formed on the semiconductor substrate and includes a cylindrical through hole. A block insulating film, a charge storage film, a tunnel insulating film, and a semiconductor layer are formed on a side surface of the control gate inside the through hole. The... Agent:

20130062686 - Non-volatile semiconductor memory using charge-accumulation insulating film: There is provided a non-volatile semiconductor memory having a charge accumulation layer of a configuration where a metal oxide with a dielectric constant sufficiently higher than a silicon nitride, e.g., a Ti oxide, a Zr oxide, or a Hf oxide, is used as a base material and an appropriate amount... Agent:

20130062688 - Semiconductor device and method for manufacturing same: According to an embodiment, a semiconductor device includes a semiconductor layer, a first semiconductor region provided on the semiconductor layer, a second semiconductor region, a first control electrode and a second control electrode. The first control electrode faces the first and second semiconductor regions through an insulating film in a... Agent: Kabushiki Kaisha Toshiba

20130062689 - Semiconductor device and method for manufacturing the same: A semiconductor device includes a semiconductor layer of a second conductive type, a first diffused region of a first conductive type formed in the semiconductor layer, a second diffused region of the second conductive type selectively formed in the first diffused region, a trench formed in the semiconductor layer, a... Agent: Renesas Electronics Corporation

20130062687 - Sram cell having recessed storage node connections and method of fabricating same: An SRAM cell and a method of forming an SRAM cell. The SRAM cell includes a first pass gate field effect transistor (FET) and a first pull-down FET sharing a first common source/drain (S/D) and a first pull-up FET having first and second S/Ds; a second pass gate FET and... Agent: International Business Machines Corporation

20130062690 - Semiconductor device, and manufacturing method for same: A semiconductor device has a source region, channel region, and drain region disposed in order from the surface of the device in the thickness direction of a semiconductor substrate. The device includes a source metal embedded in a source contact groove penetrating the source region and reaching the channel region,... Agent: Rohm Co., Ltd.

20130062692 - Half-finfet semiconductor device and related method: According to one embodiment, a half-FinFET semiconductor device comprises a gate structure formed over a semiconductor body. The semiconductor body includes a source region comprised of a plurality of fins extending beyond a first side of the gate structure and a continuous drain region adjacent a second side of the... Agent: Broadcom Corporation

20130062691 - Semiconductor device including an n-well structure: A device comprising a p-type base region, and a p-type region formed over the p-type base region and in contact with the p-type base region is disclosed. The device also includes an n-well region surrounded by the p-type region, wherein the n-well is formed from an n-type epitaxial layer and... Agent: Globalfoundries Singapore Pte. Ltd.

20130062693 - Semiconductor device and method of manufacturing the same: A semiconductor device which provides compactness and enhanced drain withstand voltage. The semiconductor device includes: a gate electrode; a source electrode spaced from the gate electrode; a drain electrode located opposite to the source electrode with respect to the gate electrode in a plan view and spaced from the gate... Agent: Renesas Electronics Corporation

20130062694 - Semiconductor device with high-voltage breakdown protection: A semiconductor device includes: a semiconductor substrate having a first conductivity type; a well having a second conductivity type and provided inside the semiconductor substrate; a first impurity region having the first conductivity type and provided within the well; a second impurity region having the second conductivity type, provided inside... Agent: Seiko Epson Corporation

20130062695 - Semiconductor device and manufacturing method for the same: A semiconductor device and manufacturing method for the same are disclosed. The method includes providing a substrate that has an insulator layer and a semiconductor layer overlying the insulator layer. The method further includes forming a hard mask layer pattern on the semiconductor layer and etching the semiconductor layer using... Agent: Semiconductor Manufacturing International (beijing) Corporation

20130062696 - Soi semiconductor structure with a hybrid of coplanar germanium and iii-v, and preparation method thereof: The present invention provides an SOI semiconductor structure with a hybrid of coplanar germanium (Ge) and III-V, and a method for preparing the same. A heterogeneous integrated semiconductor structure with a hybrid of Ge and the group III-V semiconductor material coplanar on an insulator includes at least one Ge substrate... Agent: Shanghai Institute Of Microsystem And Information Technology, Chinese Academy Of Sciences

20130062697 - Semiconductor device: A semiconductor device capable of dissipating heat, which has been produced in an ESD protection element, to the exterior of the device rapidly and efficiently includes an ESD protection element having a drain region, a source region and a gate electrode, and a thermal diffusion portion. The thermal diffusion portion,... Agent: Renesas Electronics Corporation

20130062698 - Electronic device including a nonvolatile memory structure having an antifuse component and a process of forming the same: An electronic device can include a nonvolatile memory cell, wherein the nonvolatile memory cell can include an access transistor, a read transistor, and an antifuse component coupled to the access transistor and the read transistor. In an embodiment, the read transistor can include a gate electrode, and the antifuse component... Agent:

20130062700 - Semiconductor device and manufacturing method therefor: A semiconductor device according to the present invention has an n-type MIS transistor. The n-type MIS transistor has a first active region surrounded by a device isolation region in a semiconductor substrate, a first gate insulating film having a first high-dielectric-constant insulating film containing a first metal for adjustment, and... Agent: Panasonic Corporation

20130062699 - Semiconductor device and method for manufacturing the same: A semiconductor device and a method for manufacturing the same are disclosed. In one embodiment, the semiconductor device may comprise a semiconductor layer, a fin formed by patterning the semiconductor layer, and a gate stack crossing over the fin. The fin may comprise a doped block region at the bottom... Agent:

20130062702 - Cmos structure having multiple threshold voltage devices: A method of forming a complementary metal oxide semiconductor (CMOS) structure having multiple threshold voltage devices includes forming a first transistor device and a second transistor device on a semiconductor substrate. The first transistor device and second transistor device initially have sacrificial dummy gate structures. The sacrificial dummy gate structures... Agent: International Business Machines Corporation

20130062704 - Cmos structure having multiple threshold voltage devices: A complementary metal oxide semiconductor (CMOS) structure having multiple threshold voltage devices includes a first transistor device and a second transistor device formed on a semiconductor substrate. A set of vertical oxide spacers selectively formed for the first transistor device are in direct contact with a gate dielectric layer of... Agent: International Business Machines Corporation

20130062703 - Electronic device including a nonvolatile memory structure having an antifuse component and a process of forming the same: An electronic device can include a nonvolatile memory cell, wherein the nonvolatile memory cell can include a substrate, an access transistor, a read transistor, and an antifuse component. Each of the access and read transistors can include source/drain regions at least partly within the substrate, a gate dielectric layer overlying... Agent:

20130062701 - Semiconductor device and manufacturing method thereof: A manufacturing method of a semiconductor device includes the following steps. First, a substrate is provided. At least one sacrificial gate structure is formed on the substrate, at least one diffusion region is formed in the substrate at each of two sides of the sacrificial gate structure, and a first... Agent:

20130062705 - Semiconductor device and manufacturing process therefor: In a semiconductor device, a gate electrode having a uniform composition prevents deviation in a work function. Controlling a Vth provides excellent operation properties. The semiconductor device includes an NMOS transistor and a PMOS transistor with a common line electrode. The line electrode includes electrode sections (A) and (B) and... Agent: Nec Corporation

20130062706 - Electronic module: An electronic module includes a first semiconductor chip and a passive component, wherein the first semiconductor chip is arranged on a surface of the passive component.... Agent: Infineon Technologies Ag

20130062707 - Dummy cell pattern for improving device thermal uniformity: A dummy cell pattern includes a dummy diffusion pattern disposed within a predetermined region A; a trench isolation pattern encompassing the dummy diffusion pattern in the predetermined region A; a first dummy gate pattern disposed on the dummy diffusion pattern with two ends of the first dummy gate pattern extending... Agent:

20130062708 - Semiconductor device structure, method for manufacturing the same, and method for manufacturing fin: A semiconductor device structure, a method for manufacturing the same, and a method for manufacturing a semiconductor fin are disclosed. In one embodiment, the method for manufacturing the semiconductor device structure comprises: forming a fin in a first direction on a semiconductor substrate; forming a gate line in a second... Agent:

20130062709 - Gap-fill keyhole repair using printable dielectric material: Disposable gate structures are formed on a semiconductor substrate. A planarization dielectric layer is deposited over the disposable gate structures and planarized to provide a top surface that is coplanar with top surface of the disposable gate structures. The planarization dielectric layer at this point includes gap-fill keyholes between narrowly... Agent: International Business Machines Corporation

20130062710 - Micro electrical mechanical system with bending deflection of backplate structure: A micro electrical mechanical system includes a membrane structure and a backplate structure. The backplate structure includes a backplate material and at least one pre-tensioning element mechanically connected to the backplate material. The at least one pre-tensioning element causes a mechanical tension on the backplate material for a bending deflection... Agent: Infineon Technologies Ag

20130062711 - Microelectromechanical system having movable element integrated into substrate-based package: A semiconductor-centered MEMS device (100) integrates the movable microelectromechanical parts, such as mechanical elements, flexible membranes, and sensors, with the low-cost device package, and leaving only the electronics and signal-processing parts in the integrated circuitry of the semiconductor chip. The package is substrate-based and has an opening through the thickness... Agent: Texas Instruments Incorporated

20130062712 - Hot-melt sealing glass compositions and devices using the same: Hot-melt sealing glass compositions that include one or more glass frits dispersed in a polymeric binder system. The polymeric binder system is a solid at room temperature, but melts at a temperature of from about 35° C. to about 90° C., thereby forming a flowable liquid dispersion that can be... Agent: Ferro Corporation

20130062713 - Pressure sensor and method for manufacturing pressure sensor: [Solving Means] A pressure sensor 1 includes a silicon substrate 2 provided therein with a reference pressure chamber 8, a diaphragm 10, consisting of part of the silicon substrate 2, formed on a surface layer portion of the silicon substrate 2 to partition a reference pressure chamber 8, and an... Agent: Rohm Co., Ltd.

20130062716 - Method of forming a magnetic tunnel junction device: A method of forming a magnetic tunnel junction device is disclosed that includes forming a trench in a substrate, the trench including a plurality of sidewalls and a bottom wall. The method includes depositing a first conductive material within the trench proximate to one of the sidewalls and depositing a... Agent: Qualcomm Incorporated

20130062714 - Strain induced reduction of switching current in spin-transfer torque switching devices: Partial perpendicular magnetic anisotropy (PPMA) type magnetic random access memory cells are constructed using processes and structural configurations that induce a directed static strain/stress on an MTJ to increase the perpendicular magnetic anisotropy. Consequently, reduced switching current of the MTJ results. The directed static strain/stress on the MTJ is induced... Agent: Qualcomm Incorporated

20130062715 - Symmetrically switchable spin-transfer-torque magnetoresistive device: A spin transfer torque magnetic random access memory (STT-MRAM) device includes magnetic tunnel junctions (MTJs) with reduced switching current asymmetry. At least one switching asymmetry balance layer (SABL) near the free layer of the MTJ reduces a first switching current Ic(p-ap) causing the value of the first switching current to... Agent: Qualcomm Incorporated

20130062717 - Circuit board: A circuit board includes a board having a hole formed therein, and an imager that is bonded to a first region including at least a portion of the hole in a front surface of the board.... Agent: Sony Corporation

20130062718 - Back-surface-incidence-type semiconductor light receiving element: A back-surface-incidence semiconductor light element includes: a semiconductor substrate of a first conductivity type; a first semiconductor layer of a first conductivity type on the semiconductor substrate; a light absorbing layer on the first semiconductor layer; a second semiconductor layer on the light absorbing layer; and an impurity diffusion region... Agent: Mitsubishi Electric Corporation

20130062719 - Optical input/output device and method of fabricating the same: An optical input/output (I/O) device is provided. The device includes a substrate including an upper trench; a waveguide disposed within the upper trench of the substrate; a photodetector disposed within the upper trench of the substrate and comprising a first end surface optically connected to an end surface of the... Agent: Samsung Electronics Co., Ltd.

20130062720 - Extended area cover plate for integrated infrared sensor: An integrated circuit chip includes a window cover over etchant holes in a dielectric layer and over a cavity in the substrate of said integrated circuit chip. The window cover extends at least 400 microns beyond the edge of the cavity. An integrated sensor chip with a sensor cover which... Agent: Texas Instruments Incorporated

20130062721 - Semiconductor strip detector: The present invention provides a semiconductor strip detector that can reduce noise generated from floating capacitance between electrodes while maintaining high detection efficiency. The semiconductor strip detector for detecting radiation includes: a substrate integrally formed from semiconductor and receiving incident radiation; a first electrode group made up of a plurality... Agent: Rigaku Corporation

20130062722 - Chip module and a method for manufacturing a chip module: In various embodiments, a chip module may include a first chip; and a leadframe with a first leadframe area and a second leadframe area, wherein the first leadframe area is electrically insulated from the second leadframe area; wherein the first chip is arranged at least partially on the first leadframe... Agent: Infineon Technologies Ag

20130062723 - Schottky diode: The present disclosure generally relates to a Schottky diode that has a substrate, a drift layer provided over the substrate, and a Schottky layer provided over an active region of the drift layer. The metal for the Schottky layer and the semiconductor material for the drift layer are selected to... Agent: Cree, Inc.

20130062724 - Power module and power converter containing power module: A power module includes a semiconductor chip, a first coupling conductor with one main surface coupled to one main surface of the semiconductor chip, a second coupling conductor with one main surface coupled to the other main surface of the semiconductor chip, a coupling terminal supplied with electrical power from... Agent:

20130062727 - Crack stop structure and method for forming the same: A semiconductor structure includes a matrix, an integrated circuit and a scribe line. The matrix includes a scribe line region and a circuit region. The integrated circuit is disposed within the circuit region. The scribe line is disposed within the scribe line region and includes a crack stop trench which... Agent:

20130062726 - Semiconductor fuse with enhanced post-programming resistance: Post programming resistance of a semiconductor fuse is enhanced by using an implantation to form an amorphous silicon layer and to break up an underlying high-κ/metal gate. Embodiments include forming a shallow trench isolation (STI) region in a silicon substrate, forming a high-κ dielectric layer on the STI region, forming... Agent: Global Foundries Inc.

20130062725 - System and method of galvanic isolation in digital signal transfer integrated circuits utilizing conductivity modulation of semiconductor substrate: A galvanic isolation system provides galvanic isolation in digital transfer integrated circuits by using conductivity modulation of the semiconductor substrate. Modulation of the conductivity of the substrate affects eddy current losses of a (differential) RF inductor that is isolated from the substrate by a sufficient amount of dielectric material, which... Agent:

20130062728 - Beol anti-fuse structures for gate last semiconductor devices: An approach is provided for semiconductor devices including an anti-fuse structure. The semiconductor device includes a first metallization layer including a first portion of a first electrode and a second electrode, the second electrode being formed in a substantially axial plane surrounding the first portion of the first electrode, with... Agent: Globalfounders Inc.

20130062730 - Electronic semiconductor device with integrated inductor, and manufacturing method: An embodiment of an electronic device includes first and second semiconductor bodies. The first semiconductor body houses a first conductive strip having a first end portion and a second end portion, and houses a first conduction terminal electrically coupled to the first end portion and facing a surface of the... Agent: Stmicroelectronics S.r.l.

20130062729 - Forming a ferromagnetic alloy core for high frequency micro fabricated inductors and transformers: A plurality of sequential electro-deposition, planarization and insulator deposition steps are performed over a patterned thick photoresist film to form a laminated ferromagnetic alloy core for micro-fabricated inductors and transformers. The use of a plurality of contiguous thin laminations within deep patterns on non-removable photoresist film provides sufficient volume of... Agent:

20130062731 - Semiconductor device: A semiconductor device includes a substrate having a main surface and a rear surface, a transistor formed over a side of the main surface, an insulator layer formed over a side of the main surface, an inductor formed over the insulator layer and a side of the main surface, a... Agent: Renesas Electronics Corporation

20130062733 - Integrated circuit with integrated decoupling capacitors: Ferroelectric capacitor structures for integrated decoupling capacitors and the like. The ferroelectric capacitor structure includes two or more ferroelectric capacitors connected in series with one another between voltage nodes. The series connection of the ferroelectric capacitors reduces the applied voltage across each, enabling the use of rough ferroelectric dielectric material,... Agent: Texas Instruments Incorporated

20130062732 - Interconnect structures with functional components and methods for fabrication: An electronic device includes an interlevel dielectric layer formed over a substrate and has a first set of openings and a second set of openings formed through the interlevel dielectric layer. The substrate includes conductive areas. A conductive contact structure is formed in the first set of openings in the... Agent: International Business Machines Corporation

20130062734 - Crystalline film, device, and manufacturing methods for crystalline film and device: Provided are a crystalline film in which variations in the crystal axis angle after separation from a substrate for epitaxial growth have been eliminated, and various devices in which the properties thereof have been improved by including the crystalline film. And the crystalline film has a thickness of 300 μm... Agent: Namiki Seimitsu Houseki Kabushiki Kaisha

20130062735 - Method for forming stair-step structures: A method for forming a stair-step structure in a substrate is provided. An organic mask is formed over the substrate. A hardmask with a top layer and sidewall layer is formed over the organic mask. The sidewall layer of the hard mask is removed while leaving the top layer of... Agent: Lam Research Corporation

20130062736 - Post-polymer revealing of through-substrate via tips: A method of forming semiconductor die includes forming a layer of polymer or a precursor of the polymer on a bottomside of a substrate having a topside including active circuitry and a bottomside, and a plurality of through-substrate-vias (TSVs). The TSVs have a liner including at least a dielectric liner... Agent: Texas Instruments Incorporated

20130062737 - Semiconductor device and manufacturing method of the same: According to one embodiment, a semiconductor device comprises a device substrate, and a supporting substrate. The supporting substrate is joined onto the device substrate. The device substrate has a first groove in an outer circumferential portion on a joint surface side to the supporting substrate.... Agent:

20130062738 - Single crystal silicon membrane with a suspension layer, method for fabricating the same, and a micro-heater: To form a single crystal silicon membrane with a suspension layer, a single crystal silicon substrate with crystal orientation <111> is prepared. A doped layer is formed on the top surface of the single crystal silicon substrate. Multiple main etching windows are formed through the doped layer. A cavity is... Agent:

20130062739 - Structural body and method for manufacturing semiconductor substrate: A structural body includes a sapphire underlying substrate; and a semiconductor layer of a group III nitride semiconductor disposed on the underlying substrate. An upper surface of the underlying substrate is a crystal surface tilted at an angle of 0.5° or larger and 4° or smaller with respect to a... Agent: Takafumi Yao

20130062740 - Tunable radiation source: An energy distribution of soft error-inducing radiation likely to be encountered by an electronic circuit during operation is determined. A tuned radiation source having a source energy distribution similar to the determined energy distribution is prepared. The electronic circuit is tested using the tuned radiation source.... Agent: International Business Machines Corporation

20130062741 - Semiconductor devices and methods of manufacturing and packaging thereof: Semiconductor devices and methods of manufacturing and packaging thereof are disclosed. In one embodiment, a semiconductor device includes an integrated circuit and a plurality of copper pillars coupled to a surface of the integrated circuit. The plurality of copper pillars has an elongated shape. At least 50% of the plurality... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130062742 - Spot plated leadframe and ic bond pad via array design for copper wire: There is provided a system and method for a spot plated leadframe and an IC bond pad via array design for copper wire. There is provided a semiconductor package comprising a leadframe having a pre-plated finish and a spot plating on said pre-plated finish, a semiconductor die including a bond... Agent: Conexant Systems, Inc.

20130062744 - Power module package: Disclosed herein is a power module package, including: a first substrate having one surface and the other surface; first vias formed to penetrate from one surface of the first substrate to the other surface thereof; a metal layer formed on one surface of the first substrate; semiconductor devices formed on... Agent: Samsung Electro-mechanics Co., Ltd.

20130062743 - Power module package and method for manufacturing the same: Disclosed herein are a power module package and a method for manufacturing the same. The power module package includes: a heat dissipation plate including a first heat dissipation plate and a second heat dissipation plate disposed to be spaced apart from each other; insulating layers formed on the heat dissipation... Agent: Samsung Electro-mechanics Co., Ltd.

20130062745 - Semiconductor device, semiconductor device manufacturing method, semiconductor device mounting structure and power semiconductor device: A semiconductor device includes a plurality of die pad sections, a plurality of semiconductor chips, each of which is arranged in each of the die pad sections, a resin encapsulation portion having a recess portion for exposing at least a portion of the die pad sections, the resin encapsulation portion... Agent: Rohm Co., Ltd.

20130062748 - Epoxy resin composition for semiconductor encapsulant and semiconductor device using the same: According to the present invention, an epoxy resin composition for semiconductor encapsulant including (A) an epoxy resin, (B) a curing agent, (C) an inorganic filler, and (D) a compound in which a copolymer of a 1-alkene having 5 to 80 carbon atoms and maleic anhydride is esterified with an alcohol... Agent: Sumitomo Bakelite Co., Ltd.

20130062747 - Semiconductor device and manufacturing method of the same: In a manufacturing method of a semiconductor device having a multilevel interconnect layer including a low-k layer, a two-step cutting technique is used for dicing. After formation of a groove in a semiconductor wafer with a tapered blade, the groove is divided with a straight blade thinner than the groove... Agent: Renesas Electronics Corporation

20130062746 - Soldering relief method and semiconductor device employing same: A semiconductor device includes a substrate having a first side and a second side, the second side having a mounting location for at least one semiconductor element, and the first side having a plurality of locations electrically connected to locations on the second side. A plurality of electrically conductive interconnects... Agent: Qualcomm Incorporated

20130062749 - Semiconductor module: A semiconductor module that can be connected with simple wiring is provided. A semiconductor device of the semiconductor module is provided with a semiconductor substrate, a first electrode formed on one surface of the semiconductor substrate, and a second electrode formed on a surface of the semiconductor substrate opposite to... Agent: Toyota Jidosha Kabushiki Kaihsa

20130062750 - Semiconductor device including cladded base plate: A semiconductor device includes a semiconductor chip coupled to a substrate and a base plate coupled to the substrate. The base plate includes a first metal layer clad to a second metal layer. The second metal layer is deformed to provide a pin-fin or fin cooling structure.... Agent: Infineon Technologies Ag

20130062751 - Power module and power module manufacturing method: A power module includes: a sealing body including a semiconductor element having a plurality of electrode surfaces, a first conductor plate connected to one electrode surface of the semiconductor element via solder, and a sealing material for sealing the semiconductor element and the first conductor plate, the sealing body having... Agent:

20130062752 - Ring structure for chip packaging: A ring structure for chip packaging comprises a frame portion adaptable to bond to a substrate and at least one corner portion. The frame portion surrounds a semiconductor chip and defines an inside opening, and the inside opening exposes a portion of a surface of the substrate. The at least... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130062753 - C-rich carbon boron nitride dielectric films for use in electronic devices: A carbon-rich carbon boron nitride dielectric film having a dielectric constant of equal to, or less than 3.6 is provided that can be used as a component in various electronic devices. The carbon-rich carbon boron nitride dielectric film has a formula of CxByNz wherein x is 35 atomic percent or... Agent: International Business Machines Corporation

20130062754 - Wiring substrate and semiconductor package: A wiring substrate includes: a substrate body made of an inorganic material; a first electrode portion, having a rectangular plane shape, which penetrates through the substrate body in a thickness direction of the substrate body; a second electrode portion, having a rectangular plane shape, which penetrates through the substrate body... Agent: Shinko Electric Industries Co., Ltd.

20130062759 - Electronic device package: A chip package is disclosed. The package includes a carrier substrate, at least two semiconductor chips, a fill material layer, a protective layer, and a plurality of conductive bumps. The carrier substrate includes a grounding region. The semiconductor chips are disposed overlying the grounding region of the carrier substrate. Each... Agent: Xintec Inc.

20130062755 - Elongated bump structure in semiconductor device: A device includes a chip attached to a substrate. The chip includes a conductive pillar having a length (L) measured along a long axis of the conductive pillar and a width (W) measured along a short axis of the conductive pillar. The substrate includes a conductive trace and a mask... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130062757 - No flow underfill or wafer level underfill and solder columns: A preassembly semiconductor device comprises substrate soldering structures extending toward chip soldering structures for forming solder connections with the chip soldering structures, i.e., the chip and the substrate are in preassembly positions relative to one another. The height of the substrate soldering structures is greater than the height of the... Agent: International Business Machines Corporation

20130062758 - Semiconductor device: In one embodiment, a semiconductor device has a substrate, a first semiconductor chip, an electrode, a first and second connection member, and a first and second sealing member. The electrode is disposed on the first semiconductor chip and contains Al. The first connection member electrically connects the electrode and the... Agent: Kabushiki Kaisha Toshiba

20130062756 - Substrate structure with compliant bump and manufacturing method thereof: A substrate structure with compliant bump comprises a substrate, a plurality of bumps, and a metallic layer, wherein the substrate comprises a surface, a trace layer, and a protective layer. The trace layer comprises a plurality of conductive pads, and each of the conductive pads comprises an upper surface. The... Agent: Chipbond Technology Corporation

20130062763 - De-pop on-device decoupling for bga: Embodiments of the invention place surface-mount devices such as decoupling capacitors, resistors or other devices directly on the underside of a ball grid array (BGA) electronic integrated circuit (EIC) package, in place of de-populated BGA pads.... Agent: Alcatel-lucent Canada, Inc.

20130062762 - In-grid on-device decoupling for bga: Embodiments of the invention place surface-mount such as decoupling capacitors, resistors or other devices directly on the underside of a ball grid array (BGA) electronic integrated circuit (EIC) package, between BGA pads.... Agent: Alcatel-lucent Canada, Inc.

20130062765 - Low loop wire bonding: A multi-die package includes a first semiconductor die and a second semiconductor die each having an upper surface with a plurality of bond pads positioned thereon. The multi-die package also includes a plurality of bonding wires each coupling one of the bond pads on the upper surface of the first... Agent: Carsem (m) Sdn. Bhd.

20130062761 - Packaging methods and structures for semiconductor devices: Packaging methods and structures for semiconductor devices are disclosed. In one embodiment, a packaged semiconductor device includes a redistribution layer (RDL) having a first surface and a second surface opposite the first surface. At least one integrated circuit is coupled to the first surface of the RDL, and a plurality... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130062760 - Packaging methods and structures using a die attach film: Packaging methods and structures for semiconductor devices that utilize a novel die attach film are disclosed. In one embodiment, a method of packaging a semiconductor device includes providing a carrier wafer and forming a die attach film (DAF) that includes a polymer over the carrier wafer. A plurality of dies... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130062764 - Semiconductor package with improved pillar bump process and structure: A flip chip structure formed on a semiconductor substrate includes a first plurality of copper pillars positioned directly over, and in electrical contact with respective ones of a plurality of contact pads on the front face of the semiconductor substrate. A layer of molding compound is positioned on the front... Agent: Stmicroelectronics Pte Ltd.

20130062766 - System and method for 3d integrated circuit stacking: A method and system of stacking and aligning a plurality of integrated circuits. The method includes the steps of providing a first integrated circuit having at least one funnel-shaped socket, providing a second integrated circuit, aligning at least one protrusion on the second integrated circuit with the at least one... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130062767 - Via structure and via etching process of forming the same: An integrated circuit structure includes a semiconductor substrate and a hard mask layer formed on the semiconductor substrate. The integrated circuit structure further includes at least a conductive layer formed in the hard mask layer and a via extending from the hard mask layer to at least a portion of... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130062768 - Method for the production of a substrate having a coating comprising copper, and coated substrate and device prepared by this method: A method for producing a substrate with a copper or a copper-containing coating is disclosed. The method comprises a first step wherein a first precursor, a second precursor and a substrate are provided. The first precursor is a copper complex that contains no fluorine and the second precursor is selected... Agent: Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

20130062769 - Microstructure modification in copper interconnect structures: A metal interconnect structure and a method of manufacturing the metal interconnect structure. Manganese (Mn) is incorporated into a copper (Cu) interconnect structure in order to modify the microstructure to achieve bamboo-style grain boundaries in sub-90 nm technologies. Preferably, bamboo grains are separated at distances less than the “Blech” length... Agent: International Business Machines Corporation

20130062770 - Semiconductor structure and method for making same: One or more embodiments relate to a semiconductor structure, comprising: a barrier layer overlying a workpiece surface; a seed layer overlying the barrier layer; an inhibitor layer overlying said seed layer, the inhibitor layer having a opening exposing a portion of the seed layer, and a fill layer overlying the... Agent: Infineon Technologies Ag

20130062771 - Design method of wiring layout, semiconductor device, program for supporting design of wiring layout, and method for manufacturing semiconductor device: According to one embodiment, a design method of layout formed by a sidewall method is provided. The method includes: preparing a base pattern on which a plurality of first patterns extending in a first direction and arranged at a first space in a second direction intersecting the first direction and... Agent: Kabushiki Kaisha Toshiba

20130062772 - Semiconductor device and method for fabricating the same: In a method for fabricating a semiconductor device, first, a first metal interconnect is formed in an interconnect formation region, and a second metal interconnect is formed in a seal ring region. Subsequently, by chemical mechanical polishing or etching, the upper portions of the first metal interconnect and the second... Agent: Panasonic Corporation

20130062779 - Bonding contact area on a semiconductor substrate: A bonding contact area on a semiconductor substrate is provided that includes a reinforcing structure having at least one conductive material layer arranged on the semiconductor substrate to receive the patterned reinforcing structure, a metal layer formed as a bonding contact layer with a bonding surface and arranged on a... Agent:

20130062773 - Contact for a non-volatile memory and method therefor: A semiconductor device is disclosed that comprises a first non-volatile memory cell, a second non-volatile memory cell, an active region between the first and second memory cells, and an electrically conductive contact touching the active region, wherein the contact has a horizontal cross-section that is at least five percent smaller... Agent:

20130062776 - Electrical test structure applying 3d-ics bonding technology for stacking error measurement: A 3D integrated circuit including a first wafer and a second wafer is provided. The first wafer includes a first conduction pattern. The second wafer includes a second conduction pattern which is electrically connected to the first conduction pattern. A displacement between the first wafer and the second wafer is... Agent: National Chiao Tung University

20130062774 - Semiconductor device and method for forming the same: A method includes forming a metal hard mask over a low-k dielectric layer. The step of forming the metal hard mask includes depositing a sub-layer of the metal hard mask, and performing a plasma treatment on the sub-layer of the metal hard mask. The metal hard mask is patterned to... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130062777 - Semiconductor integrated circuit device: Also in a semiconductor integrated circuit device including a copper embedded wiring as a main wiring layer, generally, the uppermost-layer wiring layer is often an aluminum-based pad layer in order to ensure wire bonding characteristics. The aluminum-based pad layer is also generally used as a wiring layer (general intercoupling wiring... Agent: Renesas Electronics Corporation

20130062775 - Strain-compensating fill patterns for controlling semiconductor chip package interactions: Generally, the subject matter disclosed herein relates to sophisticated semiconductor chips that may be less susceptible to the occurrence of white bumps during semiconductor chip packaging operations, such as flip-chip or 3D-chip assembly, and the like. One illustrative semiconductor chip disclosed herein includes, among other things, a bond pad and... Agent: Globalfoundries Inc.

20130062778 - Wiring substrate and semiconductor package: A wiring substrate includes: a substrate body made of an inorganic material; a first electrode portion, having a flat-plate shape, which penetrates through the substrate body in a thickness direction of the substrate body; a second electrode portion, having a flat-plate shape, which penetrates through the substrate body in the... Agent: Shinko Electric Industries Co., Ltd.

20130062781 - Chip arrangement and method for producing a chip arrangement: A chip arrangement includes semiconductor chips coupled to opposing sides of an insulating layer. The arrangement includes a first semiconductor chip having a first chip surface presenting a first chip conductive region. An electrically insulating layer includes a first layer surface presenting a first layer conductive region, and a second,... Agent: Infineon Technologies Ag

20130062783 - Chip packaging structure and manufacturing method for the same: A chip packaging structure and a manufacturing method for the same are provided. The chip packaging structure includes a first chip, a second chip and a transfer component. The first chip has a plurality of first bonding pads formed on the top surface of the first chip. The second chip... Agent: Dawning Leading Technology Inc.

20130062780 - Chip stacking structure: A chip stacking structure includes a first chip and a second chip. The first chip includes a surface having a first group of pads formed thereon, and the second chip includes a surface having a second group of pads formed thereon. The second group of pads is bonded onto the... Agent: United Microelectronics Corporation

20130062784 - Multi-chip packages providing reduced signal skew and related methods of operation: A packaged integrated circuit device includes a substrate, and a conductive pad and a chip stack on the substrate. A primary conductive line electrically connects the pad on the substrate to a conductive pad on one of the chips in the chip stack. Secondary conductive lines electrically connect the pad... Agent: Samsung Electronics Co., Ltd.

20130062782 - Stacked semiconductor devices and fabrication method/equipment for the same: After formation of an opening by exposing and development of the photosensitive surface protection film and adhesive layer which is formed on the circuit side of the semiconductor wafer, the semiconductor chips having a photosensitive surface protection film and adhesive layer thereon is fabricated by cutting individual chips from the... Agent: Kabushiki Kaisha Toshiba

20130062785 - Transistor structure and related transistor packaging method thereof: A transistor structure includes a chip package and two pins, wherein the chip package includes a transistor die and a molding compound encapsulating the transistor die. One of the pins is electrically connected to a first bonding pad and a second bonding pad of the transistor die, and another of... Agent:

20130062786 - Solder mask with anchor structures: Various substrates or circuit boards for receiving a semiconductor chip and methods of processing the same are disclosed. In one aspect, a method of manufacturing is provided that includes forming a first opening in a solder mask positioned on a side of a substrate. The first opening does not extend... Agent:

20130062787 - Photosensitive adhesive composition, and obtained using the same, adhesive film, adhesive sheet, semiconductor wafer with adhesive layer, semiconductor device and electronic part: A photosensitive adhesive composition comprising: (A) a polyimide having a carboxyl group as a side chain, whereof the acid value is 80 to 180 mg/KOH; (B) a photo-polymerizable compound; and (C) a photopolymerization initiator.... Agent:

20130062788 - Semiconductor apparatus: A semiconductor apparatus includes a semiconductor chip, a lead frame that has a first surface having the semiconductor chip mounted thereover and a second surface opposite to the first surface, a bonding wire that couples the semiconductor chip and the lead frame, and a high-dielectric layer that is disposed over... Agent: Renesas Electronics Corporation

20130062789 - Manufacturing a filling of a gap region: A method of manufacturing a filling of a gap region. The method includes the steps of: applying a carrier fluid and filler particles in a gap region between a first surface and a second surface; exposing the filler particles to a force field for driving the filler particles towards a... Agent: International Business Machines Corporation

20130062790 - Epoxy resin composition for semiconductor encapsulation and semiconductor device using the same: m

20130056699 - Phase change memory cell having vertical channel access transistor: A device includes a substrate having a first region and a second region. The first region comprises a first field effect transistor having a horizontal channel region within the substrate, a gate overlying the horizontal channel region, and a first dielectric covering the gate of the first field effect transistor.... Agent:

20130056698 - Resistive memory device having vertical transistors and method for making the same: The present invention relates to resistive memory devices incorporating therein vertical selection transistors and methods for making the same. A resistive memory device comprises a semiconductor substrate having a first type conductivity; a plurality of vertical selection transistors formed on the semiconductor substrate in an array, each of the plurality... Agent:

20130056702 - Atomic layer deposition of metal oxide materials for memory applications: Embodiments of the invention generally relate to nonvolatile memory devices, such as a ReRAM cells, and methods for manufacturing such memory devices, which includes optimized, atomic layer deposition (ALD) processes for forming metal oxide film stacks. The metal oxide film stacks contain a metal oxide coupling layer disposed on a... Agent: Intermolecular, Inc.

20130056700 - Defect gradient to boost nonvolatile memory performance: Embodiments of the present invention generally relate to a resistive switching nonvolatile memory element that is formed in a resistive switching memory device that may be used in a memory array to store digital data. The memory element is generally constructed as a metal-insulator-metal stack. The resistive switching portion of... Agent: Intermolecular, Inc.

20130056701 - Nonvolatile memory element, and nonvolatile memory device: A nonvolatile memory element including a resistance variable element configured to reversibly change between a low-resistance state and a high-resistance state in response to electric signals with different polarities; and a current controlling element configured such that when a current flowing when a voltage whose absolute value is a first... Agent: Panasonic Corporation

20130056703 - Sensor device and method: A graphene layer is generated on a substrate. A plastic material is deposited on the graphene layer to at least partially cover the graphene layer. The substrate is separated into at least two substrate pieces.... Agent: Infineon Technologies Ag

20130056705 - Method of manufacturing quantum dot layer and quantum dot optoelectronic device including the quantum dot layer: A method of manufacturing a quantum dot layer, and a quantum dot optoelectronic device including the quantum dot layer. The method includes sequentially stacking a self-assembled monolayer, a sacrificial layer, and a quantum dot layer on a source substrate; disposing a stamp on the quantum dot layer; picking up the... Agent: Samsung Electronics Co., Ltd.

20130056706 - Quantum dot led light system and method: The present disclosure provides methods of using quantum dots or Q dots or a similar nanocrystal to transfer, for example, excess LED light energy in the blue band to the red band where such LEDs tend to be deficient. This approach would balance the overall spectrum of the LED without... Agent:

20130056704 - Single-photon generator and method of enhancement of broadband single-photon emission: A single-photon generator contains nitrogen-vacancies or other color centers in diamond as emitters of single photons which are excited by the laser beam or another optical source and can work stably under normal conditions, the metamaterial with hyperbolic dispersion as enhancing environment, and photonic guiding structure to collect and transmit... Agent: Nano-meta Technologies Inc.

20130056707 - Nitride semiconductor device: In the nitride semiconductor device of the present invention, an active layer 12 is sandwiched between a p-type nitride semiconductor layer 11 and an n-type nitride semiconductor layer 13. The active layer 12 has, at least, a barrier layer 2a having an n-type impurity, a well layer 1a made of... Agent: Nichia Corporation

20130056708 - Unit pixel of image sensor and photo detector thereof: A unit pixel of an image sensor and a photo detector are disclosed. The photo detector of the present invention configured to absorb light can include: a light-absorbing part configured to absorb light by being formed in a floated structure; an oxide film being in contact with one surface of... Agent:

20130056709 - Unit pixel of image sensor and photo detector thereof: A unit pixel of an image sensor and a photo detector are disclosed. The photo detector can include: a substrate in which a V-shaped groove having a predetermined angle is formed; a light-absorbing part formed in a floated structure above the V-shaped groove and to which light is incident; an... Agent:

20130056720 - Compound for organic optoelectronic device, organic light emitting diode including the same and display including the organic light emitting diode: A compound for an organic optoelectronic device and an organic photoelectric device including the same are provided. A compound for an organic optoelectronic device represented by Chemical Formula 1 is provided to fabricate an organic photoelectric device having excellent electrochemical and thermal stability and life-span characteristics, and high luminous efficiency... Agent:

20130056718 - Electroluminescent organic semiconductor element and a method for repair of an electroluminescent organic semiconductor element: An electroluminescent organic semiconductor element includes a substrate and a first electrode arranged on the substrate. The semiconductor element additionally contains a second electrode and at least one organic layer, which is arranged between the first electrode and the second electrode. The organic layer is a layer that generates light... Agent: Osram Opto Semiconductors Gmbh

20130056722 - Novel organic compound: A novel organic compound is suitable for emitting green light. An organic light-emitting device includes the novel organic compound.... Agent: Canon Kabushiki Kaisha

20130056719 - Organic el display panel and organic el display apparatus: Provided is organic EL display panel and an organic EL display apparatus that can be driven at a low voltage and that exhibit excellent light-emitting efficiency. Included are a substrate, a first electrode, an auxiliary wiring, a hole injection layer, a functional layer, and a second electrode. The hole injection... Agent: Panasonic Corporation

20130056714 - Organic el display, method of producing organic el display, and electronic unit: An organic EL display includes: a plurality of first electrodes provided in a display region on a drive substrate, the plurality of first electrodes each including a laminated film having two or more layers; an organic layer provided on the plurality of first electrodes and including a light emitting layer;... Agent: Sony Corporation

20130056721 - Organic el illumination device: In the organic EL illumination device including m (m is an integer greater than 1) series circuits each of which includes n (n is an integer greater than 1) organic EL panels connected in series, each of the organic EL panels is provided with one organic EL element, a positive... Agent: Nec Lighting, Ltd.

20130056713 - Organic light emitting diode and method of fabricating the same: The inventive concept provides organic light emitting diodes and methods of fabricating the same. The method may include forming an insulating layer on a substrate, coating a metal ink on the insulating layer, thermally treating the substrate to permeate the metal ink into the insulating layer, thereby forming an assistant... Agent: Electronics And Telecommunications Research Institute

20130056711 - Organic light emitting diodes and methods of manufacturing the same: The inventive concept provides organic light emitting diodes and methods of manufacturing an organic light emitting diode. The organic light emitting diode includes a substrate, a first electrode layer and a second electrode layer formed on the substrate, an organic light emitting layer disposed between the first electrode layer and... Agent: Electronics And Telecommunications Research Institute

20130056717 - Organic light-emitting device and light source apparatus using same: An organic light-emitting device including a first substrate, a second substrate, a light drawing-out layer disposed between the first substrate and the second substrate, a transparent electrode disposed between the light drawing-out layer and the first substrate, a reflection electrode disposed between the transparent electrode and the first substrate, and... Agent: Hitachi, Ltd.

20130056710 - Organic light-emitting display apparatus and method of manufacturing the same: An organic light-emitting display apparatus includes a first insulating layer, a second insulating layer on the first insulating layer and including an unevenness portion, a third insulating layer on the second insulating layer, a pixel electrode on the third insulating layer, an opposite electrode facing the pixel electrode, and an... Agent:

20130056715 - Photoelectric conversion device: To provide a photoelectric conversion device which has little light loss caused by light absorption in a window layer, the photoelectric conversion device includes a first electrode, a first semiconductor layer formed over the first electrode, a second semiconductor layer formed over the first semiconductor layer, a third semiconductor layer... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130056712 - Static-electrical-field-enhanced semiconductor-based devices and methods of enhancing semiconductor-based device performance: Devices that include one or more functional semiconductor elements that are immersed in static electric fields (E-fields). In one embodiment, one or more electrets are placed proximate the one or more organic, inorganic, or hybrid semiconductor elements so that the static charge(s) of the electret(s) participate in creating the static... Agent: Versatilis LLC

20130056716 - Transition metal carbene complexes and the electroluminescent application thereof: This invention provides a transition metal carbene complexes and the electroluminescent application thereof. Through employing different N̂N heteroleptic ligand, the transition metal carbene complex can display wide-range color tuning ability from deep blue to red. The mentioned transition metal carbene complex can be applied in luminescent device, and the luminescent... Agent: National Tsing Hua University

20130056726 - Flat panel display device with oxide thin film transistor and method for fabricating the same: A flat panel display device with an oxide thin film transistor and a fabricating method thereof are disclosed. The fabricating method of the flat panel display device includes: preparing a substrate defined into a pixel region and a pad contact region; forming a gate electrode and a link line; forming... Agent:

20130056724 - Flat panel display device with oxide thin film transistors and method for fabricating the same: A flat panel display device with oxide thin film transistors and a fabricating method thereof are disclosed. The flat panel display device includes: a substrate; gate lines and data lines formed to cross each other and define a plurality of pixel regions on the substrate; the thin film transistors each... Agent: Lg Display Co., Ltd.

20130056723 - Protective barriers for electronic devices: The present disclosure provides for electronic devices that use low cost, conductive materials as transparent conductors. The devices contain corrosion preventative conductive polymer layers and conductive innerlayer barriers that separate corrosive electrolyte from the conductors which are prone to corrosion and dissolution, while providing an uninterrupted electrical circuit. The present... Agent: Warner Babcock Institute For Green Chemistry

20130056725 - Radiation-emitting component with a semiconductor chip and a conversion element and method for the production thereof: A radiation-emitting component includes a semiconductor chip and a conversion element. The semiconductor chip includes an active layer suitable for generating electromagnetic radiation and a radiation exit face. The conversion element includes a matrix material and a luminescent material. The conversion element is arranged downstream of the radiation exit face... Agent: Osram Opto Semiconductors Gmbh

20130056727 - Semiconductor device and method for manufacturing the same: A semiconductor device which is miniaturized and has sufficient electrical characteristics to function as a transistor is provided. In a semiconductor device including a transistor in which a semiconductor layer, a gate insulating layer, and a gate electrode layer are stacked in that order, an oxide semiconductor film which contains... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130056728 - Thin film transistor and display device: Provided is a thin film transistor capable of improving reliability in the thin film transistor including an oxide semiconductor layer. A thin film transistor including: a gate electrode; a gate insulating film formed on the gate electrode; an oxide semiconductor layer forming a channel region corresponding to the gate electrode... Agent: Sony Corporation

20130056729 - Thin film transistor substrate, lcd device including the same, and method for manufacturing thin film transistor substrate: A source electrode and a drain electrode are formed by a stack of a titanium layer, a molybdenum nitride layer, an aluminum layer, and a molybdenum nitride layer, the titanium layer is formed by dry etching, and an oxide semiconductor layer is formed by performing annealing in an oxygen-containing atmosphere... Agent:

20130056730 - Semiconductor device: A technique capable of promoting miniaturization of an RF power module used in a mobile phone etc. is provided. A directional coupler is formed inside a semiconductor chip in which an amplification part of the RF power module is formed. A sub-line of the directional coupler is formed in the... Agent:

20130056731 - Semiconductor device and method for manufacturing the semiconductor device: A semiconductor device includes a semiconductor diode. The semiconductor diode includes a drift region and a first semiconductor region of a first conductivity type formed in or on the drift region. The first semiconductor region is electrically coupled to a first terminal via a first surface of a semiconductor body.... Agent: Infineon Technologies Ag

20130056732 - Display device and manufacturing method thereof: A display device includes: a substrate; an infrared sensing transistor on the substrate; a readout transistor connected to the infrared sensing transistor; a power source line; and a light blocking member on the infrared sensing transistor, where the infrared sensing transistor includes a light blocking film on the substrate, a... Agent: Samsung Electronics Co., Ltd.

20130056733 - Sensor and method of producing a sensor: A sensor includes a substrate, a membrane, first and second spacers arranged on the substrate, a first support structure which is supported, laterally next to the membrane, by the first spacer and contacts a first electrode of a first main side of the membrane which faces the substrate, and a... Agent:

20130056741 - Display panel and thin film transistor substrate: A display panel (50a) includes a TFT substrate (20a) in which a plurality of TFTs (5a) are provided, a counter substrate (30a) provided to face the TFT substrate (20a), and a display medium layer (40) provided between the TFT substrate (20a) and the counter substrate (30a), a plurality of pixels... Agent: Sharp Kabushiki Kaisha

20130056736 - Gate driving circuit, display substrate having the same and method of manufacturing the display substrate: A gate driving circuit includes a plurality of stages outputting gate signals to a plurality of gate lines. Each of the stages includes a circuit transistor, a capacitor part, a first connecting electrode and a second connecting electrode. The circuit transistor outputs the gate signal to an output electrode in... Agent:

20130056738 - Method for manufacturing thin film transistor, thin film transistor and image display apparatus: A method for manufacturing a thin film transistor includes a first process of forming a gate electrode on a substrate; a second process of forming a gate insulation film so as to cover the gate electrode; a third process of forming a source electrode and a drain electrode on the... Agent: Toppan Printing Co., Ltd.

20130056735 - Organic light emitting display apparatus and method of manufacturing the same: An organic light-emitting display apparatus includes a thin film transistor on a display region of a substrate, the thin film transistor faces an encapsulation member, an organic light-emitting device on the display region that includes an intermediate layer having an organic emission layer, a sealing member that is between the... Agent:

20130056739 - Tft array substrate and manufacturing method thereof: A TFT array substrate and a manufacturing method thereof, where the TFT array substrate includes a substrate; a gate line and a gate electrode integrated therewith, which are covered by a gate insulating layer, a semiconductor layer, and a ohmic contact layer sequentially. An insulating layer is formed on the... Agent:

20130056734 - Tft substrate and manufacturing method thereof: A thin film transistor (TFT) substrate and a manufacturing method thereof are disclosed. The manufacturing method comprises: after a first metallic layer is formed on the TFT substrate, annealing the TFT substrate so that lattices of the first metallic layer are re-arranged to prevent occurrences of grain boundary defects in... Agent: Shenzhen China Star Optoelectronics Technology Co., Ltd.

20130056740 - Thin film transistor array panel including layered line structure and method for manufacturing the same: The present invention provides a thin film transistor array panel comprising an insulating substrate; a gate line formed on the insulating substrate; a gate insulating layer formed on the gate line; a drain electrode and a data line having a source electrode formed on the gate insulating layer, the drain... Agent: Samsung Display Co., Ltd.

20130056737 - Wiring film and active matrix substrate using the same, and method for manufacturing wiring film: An Al wiring film having a tapered shape is obtained easily and in a stable manner. An Al wiring film has a double-layer structure including a first Al alloy layer made of Al or an Al alloy, and a second Al alloy layer laid on the first Al alloy layer... Agent: Mitsubishi Electric Corporation

20130056742 - Microcrystalline silicon film, manufacturing method thereof, semiconductor device, and manufacturing method thereof: A manufacturing method of a microcrystalline silicon film includes the steps of forming a first microcrystalline silicon film over an insulating film by a plasma CVD method under a first condition; and forming a second microcrystalline silicon film over the first microcrystalline silicon film under a second condition. As a... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130056749 - Broad-area lighting systems: In accordance with certain embodiments, illumination systems are formed by aligning light-emitting elements with optical elements and/or disposing light-conversion materials on the light-emitting elements, as well as by providing electrical connectivity to the light-emitting elements... Agent:

20130056745 - Buffer layer for gan-on-si led: A buffer layer of zinc telluride (ZnTe) or titanium dioxide (TiO2) is formed directly on a silicon substrate. Optionally, a layer of AlN is then formed as a second layer of the buffer layer. A template layer of GaN is then formed over the buffer layer. An epitaxial LED structure... Agent: Bridgelux, Inc.

20130056748 - Light emitting device and light emitting device package: A light emitting device includes a light emitting layer, a substrate that is transparent to an emission wavelength of the light emitting layer and positioned to receive an emission wavelength from the light emitting layer, a convex pattern including a collection of a plurality of convex portions discretely arranged on... Agent: Rohm Co., Ltd.

20130056743 - Method and system for local control of defect density in gallium nitride based electronics: A diode includes a substrate characterized by a first dislocation density and a first conductivity type, a first contact coupled to the substrate, and a masking layer having a predetermined thickness and coupled to the semiconductor substrate. The masking layer comprises a plurality of continuous sections and a plurality of... Agent: Epowersoft, Inc.

20130056751 - Method for integrating mems microswitches on gan substrates comprising electronic power components: Methods of fabrication of electronic modules comprise, on the one hand, power electronic components fabricated on a substrate made of gallium nitride (GaN) and, on the other hand, micro-switches using electrostatic activation of the MEMS (Micro Electro Mechanical System) type. The electronic components and the micro-switches are fabricated on a... Agent: Thales

20130056750 - Nitride based semiconductor package and method of manufacturing the same and bonding substrate: A nitride based semiconductor package includes a nitride based semiconductor device, a package substrate, and a bonding substrate. The semiconductor device includes, on a surface thereof, a first electrode pattern having a source electrode, a drain electrode and a gate electrode. The bonding substrate includes, on a first surface thereof,... Agent: Samsung Electronics Co., Ltd.

20130056747 - Nitride semiconductor light emitting device and manufacturing method thereof: A nitride semiconductor light emitting device and a manufacturing method thereof are provided. The nitride semiconductor light emitting device includes: forming a first conductivity-type nitride semiconductor layer on a substrate; forming an active layer on the first conductivity-type nitride semiconductor layer; and forming a second conductivity-type nitride semiconductor layer on... Agent:

20130056746 - Semiconductor device: A semiconductor device includes: an electron-transit layer made of a semiconductor, the electron-transit layer having a first band gap; an electron-supply layer disposed on the electron-transit layer, the electron-supply layer being made of a semiconductor having a second band gap that is wider than the first band gap; a barrier-forming... Agent: Fujitsu Limited

20130056744 - Semiconductor devices with guard rings: Semiconductor devices with guard rings are described. The semiconductor devices may be, e.g., transistors and diodes designed for high-voltage applications. A guard ring is a floating electrode formed of electrically conducting material above a semiconductor material layer. A portion of an insulating layer is between at least a portion of... Agent: Transphorm Inc.

20130056754 - Electronic circuit device: A normally-off type silicon carbide junction FET has a problem that the gate thereof is not easy to use due to inferiority in the characteristics of it. This problem occurs because in order to achieve normally-off, the gate voltage should be off at 0V and at the same time, the... Agent:

20130056755 - Power semiconductor module: A transistor chip formed from a wide band gap semiconductor, on which transistor elements for an upper arm are formed is mounted on a front surface of an insulating substrate. A transistor chip formed from a wide band gap semiconductor, on which transistor elements for a lower arm are formed... Agent: Mitsubishi Electric Corporation

20130056753 - Semiconductor device with low-conducting field-controlling element: A semiconductor device including a low conducting field-controlling element is provided. The device can include a semiconductor including an active region (e.g., a channel), and a set of contacts to the active region. The field-controlling element can be coupled to one or more of the contacts in the set of... Agent:

20130056752 - Silicon carbide substrate, silicon carbide substrate manufacturing method, and semiconductor device manufacturing method: An edge region has a width of 5 mm. A valid region is surrounded by the edge region, and has an area greater than or equal to 100 cm2. At the valid region, a micropipe having a cross-sectional area exceeding 1 μm2 is not present. The valid region includes a... Agent: Sumitomo Electric Industries, Ltd.

20130056764 - Display device and manufacturing method thereof: A display device in which light leakage in a monitor element portion is prevented without increasing the number of steps and cost is provided. The display device includes a monitor element for suppressing influence on a light-emitting element due to temperature change and change over time and a TFT for... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130056762 - Display device and method for manufacturing the same: A display device having a base substrate provided with light-emitting devices and terminal electrodes connected thereto; a sealing substrate disposed to face the base substrate; a first resin material between the base substrate and the sealing substrate so as to surround a first region in which the light-emitting devices are... Agent: Sony Corporation

20130056757 - Led array capable of reducing uneven brightness distribution: A light emitting element in use for an LED array comprises an electrode layer, a semiconductor light emitting layer consisting of a p-type semiconductor layer, an active layer and an n-type semiconductor layer, a first wiring layer formed along and in parallel to one side of the semiconductor light emitting... Agent: Stanley Electric Co., Ltd.

20130056765 - Light emitting diode light source including all nitride light emitting diodes: A light source including at least two phosphor converted (pc) light emitting diodes (LEDs), each of the pc LEDs including an associated blue-emitting LED as an excitation source for a phosphor containing element.... Agent: Osram Sylvania Inc.

20130056756 - Light-transmissive member, optical device, and manufacturing methods thereof: A light-transmissive member has a first principal face, a second principal face, and side faces. The first principal face has a first portion including a center of the first principal face and a second portion between the first portion and the side face sides. The member includes a plurality of... Agent: Canon Kabushiki Kaisha

20130056758 - Method and apparatus for thin film module with dotted interconnects and vias: A method to fabricate monolithically-integrated optoelectronic module apparatuses (100) comprising at least two series-interconnected optoelectronic components (104, 106, 108). The method includes deposition and scribing on an insulating substrate or superstate (110) of a 3-layer stack in order (a, b, c) or (c, b, a) comprising: (a) back-contact electrodes (122,... Agent: Flisom Ag

20130056759 - Packaging device for matrix-arrayed semiconductor light-emitting elements of high power and high directivity: A packaging device for matrix-arrayed semiconductor light-emitting elements of high power and high directivity comprises a metal base, an array chip and a plurality of metal wires. The metal base is of highly heat conductive copper or aluminum, and a first electrode area and at least one second electrode area... Agent: Truelight Corporation

20130056760 - Pixel array substrate: A pixel array substrate includes a pixel region and a circuit region adjacent to the pixel region. A plurality of display pixel units are disposed in the pixel region and a plurality of dummy pixel units are disposed in the circuit region. Each of the dummy pixel units includes a... Agent: Chunghwa Picture Tubes, Ltd.

20130056761 - Pixel array substrate: A pixel array substrate includes a pixel region and a circuit region adjacent to the pixel region. A plurality of display pixel units are disposed in the pixel region and a plurality of dummy pixel units are disposed in the circuit region. Each of the dummy pixel units includes a... Agent: Chunghwa Picture Tubes, Ltd.

20130056763 - Semiconductor device: An object is to provide a semiconductor device that can realize a function of a thyristor without complication of the process. A semiconductor device including a memory circuit that stores a predetermined potential by reset operation and initialization operation is provided with a circuit that rewrite data in the memory... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130056766 - Semiconductor device, and method for producing same: Disclosed is a semiconductor device 100A that has first lightly doped drain regions 31A1 and 32A1 between a source region 34A1 and a channel region 33A1 of a first conductive-type driver circuit TFT 10A1 and/or between a drain region 35A1 and the channel region 33A1 of the first conductive-type driver... Agent: Sharp Kabushiki Kaisha

20130056768 - Display device and electronic apparatus having a display device: A display device includes a plurality of main pixels. Each main pixel includes a plurality of sub-pixels. At least two of the sub-pixels emit light of different colors. The at least two sub-pixels are different in size.... Agent: Sony Corporation

20130056767 - Led unit: An LED unit includes: a plurality of LED modules each having an LED chip for generating ultraviolet ray provided in a package which has an opening formed on one surface and a lens formed to cover the opening of the package; a substrate-shaped base block where the LED modules are... Agent: Panasonic Corporation

20130056769 - Light emitting diode module and display device using the same light emitting diode module: A light emitting diode (LED) module and a display device adopting the same LED module are provided. The LED module includes a circuit substrate, a LED chip, a connector and a conductive line. The LED chip has at least three pins, and the LED chip is fixed on the circuit... Agent: Au Optronics Corp.

20130056770 - Patterned substrate design for layer growth: A patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers, is provided. The patterned surface can include a set of substantially flat top surfaces and a plurality of openings. Each substantially flat top surface can have a root mean square roughness less than... Agent:

20130056771 - Semiconductor light emitting device: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, a second electrode layer under the second conductive semiconductor layer, and a transmissive conductive... Agent: Lg Innotek Co., Ltd.

20130056777 - Iii-nitride light-emitting devices with reflective engineered growth templates and manufacturing method: A light emitter includes a first mirror that is an epitaxially grown metal mirror, a second mirror, and an active region that is epitaxially grown such that the active region is positioned at or close to, at least, one antinode between the first mirror and the second mirror.... Agent: Lightwave Photonics, Inc.

20130056773 - Led package and method of the same: LED package includes a substrate with pre-formed P-type through-hole and N-type through-hole through the substrate; a reflective layer formed on an upper surface of the substrate; a LED die having P-type pad and N-type pad aligned with the P-type through-hole and the N-type through-hole; wherein the LED die is formed... Agent:

20130056774 - Lens, package and packaging method for semiconductor light-emitting device: This invention provides lenses having a pendant shape profile and their applications and forming methods. In an embodiment, the lenses are used to encapsulate one or more light-emitting diode chips so as to increase the light extraction efficiency.... Agent: Phostek, Inc.

20130056780 - Light emitting device: A light emitting device, comprising: a package which is formed of a resin and has a recess which is provided with a bottom face and two pairs of opposite inner walls surrounding the bottom face, the package having two pairs of opposite side walls made of the inner walls and... Agent: Nichia Corporation

20130056781 - Light emitting device: The light emitting device has a light emitting element 101, and translucent material 102 that passes incident light from the light emitting element 101 and emits that light to the outside. The sides of the translucent material 102 perimeter are inclined surfaces 107 that become wider from the upper surface... Agent: Nichia Corporation

20130056778 - Light emitting device and method for manufacturing the same: According to one embodiment, a light emitting device includes a substrate, a first electrode, a second electrode, an insulating section, a light emitting section, and a third electrode. The substrate with a groove is provided at a surface. The first electrode is provided inside the groove. The second electrode is... Agent: Kabushiki Kaisha Toshiba

20130056775 - Light source device and lighting device: A light source can include: a light source that emits light of a predetermined wavelength within a wavelength region covering the wavelength of ultraviolet light and that of visible light; and a wavelength conversion layer containing a fluorescent material of at least one type that is excited by excitation light... Agent:

20130056772 - Light-emitting device with narrow dominant wavelength distribution and method of making the same: This application discloses a light-emitting device with narrow dominant wavelength distribution and a method of making the same. The light-emitting device with narrow dominant wavelength distribution at least includes a substrate, a plurality of light-emitting stacked layers on the substrate, and a plurality of wavelength transforming layers on the light-emitting... Agent:

20130056779 - Light-emitting diode devices: An LED device includes a die carrier having a die mounting surface and electrical connection regions. An LED die is mounted on the die mounting surface of the die carrier. The LED die includes a substrate, a first type semiconductor layer disposed atop the substrate, a second type semiconductor layer... Agent:

20130056782 - Optoelectronic semiconductor part containing alkali-free and halogen-free metal phosphate: An optoelectronic semiconductor part comprising a light source, a housing and electrical connections, wherein the optoelectronic semiconductor part comprises a component which contains metal phosphate, and wherein the metal phosphate is substantially alkali-free and halogen-free.... Agent:

20130056776 - Plate: A plate including a substrate, a metal reflection layer and an oxidation protection layer is provided. The substrate has a first surface and a second surface opposite to the first surface. The metal reflection layer is disposed on the first surface of the substrate. The oxidation protection layer covers the... Agent: Genesis Photonics Inc.

20130056785 - Light emitting device: A light emitting device includes a first section and a second section. The first section includes a first semiconductor layer doped with a first dopant, a second semiconductor layer doped with a second dopant, and a first active layer between the first and second semiconductor layers, and the second section... Agent:

20130056787 - Light emitting device: A light emitting device includes a package equipped on a front face with a window for installing a light emitting element, and outer lead electrodes that protrude from a bottom face of the package. The package has, on the bottom face, two side face convex components provided on the side... Agent: Nichia Corporation

20130056786 - Optical semiconductor device: An optical semiconductor device in which an optical semiconductor element connected to a silver-plated copper lead frame is sealed with an addition curing silicone resin composition, the addition curing silicone resin composition having (A) organopolysiloxane that contains an aryl group and an alkenyl group and does not contain an epoxy... Agent: Shin-etsu Chemical Co., Ltd.

20130056784 - Organic light-emitting display device and method of fabricating the same: An organic electro-luminescence device capable of reducing a resistance of a cathode electrode to enhance brightness uniformity at each location within the device is described. The organic electro-luminescence device includes a bank layer formed over a substrate, the bank layer including a first, second, and third portion. A first electrode... Agent: Lg Display Co., Ltd.

20130056788 - Package for semiconductor light-emitting device and light-emitting device: An object of the present invention is to provide a package from which a metal wiring and the like are difficult to be detached even when heat is generated from a semiconductor light-emitting element. This object is achieved with a package for a semiconductor light-emitting device comprising at least a... Agent: Mitsubishi Chemical Corporation

20130056789 - Semiconductor light emitting device: A semiconductor light emitting device includes a conductive support member; a light emitting structure under the conductive support member; an insulating layer including a protrusion disposed along an outer circumference of the light emitting structure; an electrode layer having an outer portion on the insulating layer and an inner portion... Agent: Lg Innotek Co., Ltd.

20130056783 - Thermal management in large area flexible oled assembly: A large area, flexible, OLED assembly has improved thermal management by providing a metal cathode of increased thickness of at least 500 nm. A thermal heat sink trace may be used as alternative or in conjunction with the increased thickness cathode where the trace leads from a central region of... Agent: General Electric Company

20130056791 - Semiconductor device: A semiconductor device manufacturing apparatus is provided with a drawing pattern printing part having a print head which injects a conductive solvent, an insulative solvent and an interface treatment solution. The print head is formed in such a way that desired circuit drawing pattern can be printed on a wafer... Agent:

20130056790 - Semiconductor device and method for manufacturing same: According to one embodiment, a semiconductor device includes: a drain layer; a drift layer formed on the drain layer, an effective impurity concentration of the drift layer being lower than an effective impurity concentration of the drain layer; a base layer formed on the drift layer; a source layer selectively... Agent: Kabushiki Kaisha Toshiba

20130056792 - Integrated circuit, electronic device and esd protection therefor: An integrated circuit comprising electro-static discharge (ESD) protection circuitry arranged to provide ESD protection to an external terminal of the integrated circuit. The ESD protection circuitry comprises: a thyristor circuit comprising a first bipolar switching device operably coupled to the external terminal and a second bipolar switching device operably coupled... Agent: Freescale Semiconductor, Inc.

20130056793 - Providing group v and group vi over pressure for thermal treatment of compound semiconductor thin films: Embodiments of the invention provide methods for forming high quality, low resistivity Group III-V or Group II-VI compounds. In one embodiment, the method includes growing a compound semiconductor layer having a n-type or p-type dopant over a substrate, the compound semiconductor layer comprising at least a first component and a... Agent: Applied Materials, Inc.

20130056794 - Semiconductor wafer, method of producing semiconductor wafer, electronic device, and method of producing electronic device: A semiconductor wafer includes a base wafer, a first semiconductor portion that is formed on the base wafer and includes a first channel layer containing a majority carrier of a first conductivity type, a separation layer that is formed over the first semiconductor portion and contains an impurity to create... Agent: Sumitomo Chemical Company, Limited

20130056795 - Finfet design controlling channel thickness: System and method for controlling the channel thickness and preventing variations due to formation of small features. An embodiment comprises a fin raised above the substrate and a capping layer is formed over the fin. The channel carriers are repelled from the heavily doped fin and confined within the capping... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130056796 - Novel method to increase breakdown voltage of semiconductor devices: Methods of achieving high breakdown voltages in semiconductor devices by suppressing the surface flashover using high dielectric strength insulating encapsulation material are generally described. In one embodiment of the present invention, surface flashover in AlGaN/GaN heterostructure field-effect transistors (HFETs) is suppressed by using high dielectric strength insulating encapsulation material. Surface... Agent: University Of South Carolina

20130056797 - Semiconductor device having schottky diode structure: A semiconductor device including a base substrate; a semiconductor layer which is disposed on the base substrate and has a 2-Dimensional Electron Gas (2DEG) generated within the semiconductor layer; a plurality of first ohmic electrodes which are disposed on the central region of the semiconductor layer and have island-shaped cross... Agent: Samsung Electro-mechanics Co., Ltd.

20130056798 - Three-dimensional printed memory: As technology scales, the mask cost rises sharply. It was generally believed that three-dimensional mask-programmed read-only memory (3D-MPROM) would become economically un-viable. The present invention discloses a three-dimensional printed memory (3D-P). It is a type of 3D-MPROM and uses shared data-masks to print data. By forming the mask-patterns for a... Agent: Chengdu HaicunIPTechnology LLC

20130056799 - Circuit simulation method and semiconductor integrated circuit: A simulation method of a circuit in which a transistor is formed of a material (e.g., SiGe, etc.) having a lattice constant different from that of a semiconductor substrate, on source and drain regions, an adjacent active region is formed near the transistor, and a gate electrode is formed in... Agent: Panasonic Corporation

20130056800 - Image sensor with reduced noise by blocking nitridation using photoresist: An image sensor is described in which the imaging pixels have reduced noise by blocking nitridation in selected areas. In one example, a method includes forming a first and second gate oxide layer over a substrate, forming a layer of photoresist over the first gate oxide layer, applying nitridation to... Agent:

20130056801 - Junction field effect transistor and analog circuit: A junction field effect transistor comprising: a semiconductor substrate having a first conductivity type; a channel region having a second conductivity type different from the first conductivity type, and being formed in a surface of the semiconductor substrate; a first buried region having the second conductivity type, being formed within... Agent: Panasonic Corporation

20130056802 - Implant free extremely thin semiconductor devices: A semiconductor device and a method of fabricating a semiconductor device are disclosed. In one embodiment, the method comprises providing a semiconductor substrate, epitaxially growing a Ge layer on the substrate, and epitaxially growing a semiconductor layer on the Ge layer, where the semiconductor layer has a thickness of 10... Agent: International Business Machines Corporation

20130056803 - Semiconductor device: Power supply plugs, which couple a power supply active region to a power supply metal interconnect, include a plurality of first plugs, which are arranged at first pitches of a predetermined length, and a second plug, which is spaced apart from the closest one of the first plugs by a... Agent: Panasonic Corporation

20130056804 - Semiconductor device: A semiconductor device includes a MIS transistor. The MIS transistor includes an active region surrounded by an isolation region in a semiconductor substrate, a gate insulating film formed on the active region and the isolation region, and having a high dielectric constant film, and a gate electrode formed on the... Agent: Panasonic Corporation

20130056805 - Transistors having stressed channel regions and methods of forming transistors having stressed channel regions: A method of forming a field effect transistor and a field effect transistor. The method includes (a) forming gate stack on a silicon layer of a substrate; (b) forming two or more SiGe filled trenches in the silicon layer on at least one side of the gate stack, adjacent pairs... Agent: International Business Machines Corporation

20130056807 - Photoelectric converting apparatus: A photoelectric converting apparatus has first and third semiconductor layers of a first conductivity type which respectively output signals obtained by photoelectric conversion, and second and fourth semiconductor layers of a second conductivity type supplied with potentials from a potential supplying unit. In the photoelectric converting apparatus, the first, second,... Agent: Canon Kabushiki Kaisha

20130056806 - Unit pixel of color image sensor and photo detector thereof: A unit pixel of an image sensor and a photo detector are disclosed. The photo detector of the present invention can include: a light-absorbing part configured to absorb light by being formed in a floated structure; an oxide film having one surface thereof being in contact with the light-absorbing part;... Agent:

20130056809 - Image sensor with reduced noiseby blocking nitridation over selected areas: An image sensor is described in which the imaging pixels have reduced noise by blocking nitridation in selected areas. In one example, an imaging pixel of an image sensor includes a photodiode region to accumulate an image charge in response to incident light, a first transistor having a gate oxide... Agent:

20130056808 - Isolation area between semiconductor devices having additional active area: An isolation area that provides additional active area between semiconductor devices on an integrated circuit is described. In one embodiment, the invention includes a complementary metal oxide semiconductor transistor of an image sensor having a source, a drain, and a gate between the source and the drain, the transistor having... Agent:

20130056811 - Hydrogen-blocking film for ferroelectric capacitors: An ammonia-free method of depositing silicon nitride by way of plasma-enhanced chemical vapor deposition (PECVD). Source gases of silane (SiH4) and nitrogen (N2) are provided to a parallel-plate plasma reactor, in which energy is capacitively coupled to the plasma, and in which the wafer being processed has been placed at... Agent: Texas Instruments Incorporated

20130056810 - Semiconductor device and method for manufacturing same: According to one embodiment, a semiconductor device includes, a semiconductor substrate including a plurality of fins formed in an upper surface of the semiconductor substrate in a first region to extend in a first direction, a first gate electrode extending in a second direction intersecting the first direction to straddle... Agent:

20130056812 - Semiconductor memory devices including vertical transistor structures: A semiconductor memory device may include a common source region on a substrate, an active pattern between the substrate and the common source region, a gate pattern facing a sidewall of the active pattern, a gate dielectric pattern between the gate pattern and the active pattern, a variable resistance pattern... Agent:

20130056813 - Capacitor structure applied to integrated circuit: A capacitor structure applied to an integrated circuit (IC) is provided. The capacitor structure includes a metal-oxide semiconductor (MOS) capacitor and two metal structures with different structures. The MOS capacitor has a first terminal and a second terminal. The two metal capacitors are formed above the MOS capacitor and respectively... Agent: Phison Electronics Corp.

20130056815 - Nonvolatile semiconductor memory device and method for manufacturing the same: According to one embodiment, a nonvolatile semiconductor memory device includes: a first stacked body; a memory film; a first channel body layer provided inside the memory film; an interlayer insulating flm provided on the first stacked body; a second stacked body having a select gate electrode layer, and a second... Agent: Kabushiki Kaisha Toshiba

20130056814 - Semiconductor memory device: According to one embodiment, a semiconductor memory device includes a substrate, a first stacked body, a second stacked body, a memory film, a gate insulating film, and a channel body. The first stacked body has a plurality of electrode layers and a plurality of first insulating layers. The second stacked... Agent: Kabushiki Kaisha Toshiba

20130056816 - Nonvolatile semiconductor memory device and method for manufacturing same: According to one embodiment, a nonvolatile semiconductor memory device includes: a substrate; a memory unit provided on the substrate; and a non-memory unit provided on the substrate. The memory unit includes: a first stacked body including a plurality of first electrode films and a first inter-electrode insulating film, the plurality... Agent: Kabushiki Kaisha Toshiba

20130056817 - Semiconductor devices including device isolation structures and method of forming the same: Provided are semiconductor devices and methods of forming the same. A device isolation structure in the semiconductor device includes a gap region. A dielectric constant of a vacuum or an air in the gap region is smaller than a dielectric constant of an oxide layer and, as a result coupling... Agent: Samsung Electronics Co., Ltd.

20130056819 - Nonvolatile semiconductor memory: According to one embodiment, a nonvolatile semiconductor memory includes a semiconductor layer, a first insulating layer on the semiconductor layer, a charge storage layer on the first insulating layer, a second insulating layer on the charge storage layer, and a control gate electrode on the second insulating layer. The second... Agent:

20130056818 - Nonvolatile semiconductor storage device and method for manufacturing same: A nonvolatile semiconductor storage device includes: a structural body; semiconductor layers; a memory film; a connecting member; and a conductive member. The structural body is provided above a memory region of a substrate including the memory region and a non-memory region, and includes electrode films stacked along a first axis... Agent: Kabushiki Kaisha Toshiba

20130056820 - Three-dimensional semiconductor device and method of fabricating the same: A three-dimensional semiconductor device and a method of fabricating the same, the device including a lower insulating layer on a top surface of a substrate; an electrode structure sequentially stacked on the lower insulating layer, the electrode structure including conductive patterns; a semiconductor pattern penetrating the electrode structure and the... Agent:

20130056822 - Semiconductor device: A first semiconductor device comprising: a first conductivity type drift region formed in a semiconductor substrate; a second conductivity type body region formed at an upper surface of the semiconductor substrate on an upper surface side of the drift region; a first conductivity type first semiconductor region formed on a... Agent: Toyota Jidosha Kabushiki Kaisha

20130056821 - Trenched power semiconductor device and fabrication method thereof: A trenched power semiconductor device on a lightly doped substrate is provided. The device has a base, a plurality of trenches including at least a gate trench, a plurality of first heavily doping regions, a body region, a source doped region, a contact window, a second heavily doped region, and... Agent: Super Group Semiconductor Co., Ltd.

20130056823 - Semiconductor devices: A device isolation layer is formed in a substrate to define spaced-apart linear active regions in the substrate. Buried gate patterns are formed in the substrate and extending along a first direction to cross the active regions. An etch stop layer and a first insulating layer are formed on the... Agent:

20130056824 - Semiconductor device and manufacturing method for the same: A semiconductor device and a manufacturing method for the same are provided. The semiconductor device comprises a first doped region, a second doped region, a dielectric structure and a gate structure. The first doped region has a first type conductivity. The second doped region has a second type conductivity opposite... Agent: Macronix International Co., Ltd.

20130056825 - Mos device and method of manufacturing the same: A semiconductor device and method of forming the semiconductor device are disclosed, where the semiconductor device includes additional implant regions in the source and drain areas of the device for improving Ron-sp and BVD characteristics of the device. The device includes a gate electrode formed over a channel region that... Agent: Macronix International Co., Ltd.

20130056826 - Multi-fin device and method of making same: A multiple-fin device includes a substrate and a plurality of fins formed on the substrate. Source and drain regions are formed in the respective fins. A dielectric layer is formed on the substrate. The dielectric layer has a first thickness adjacent one side of a first fin and having a... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130056827 - Non-planar semiconductor structure and fabrication method thereof: A non-planar semiconductor structure includes a substrate, at least two fin-shaped structures, at least an isolation structure, and a plurality of epitaxial layers. The fin-shaped structures are located on the substrate. The isolation structure is located between the fin-shaped structures, and the isolation structure has a nitrogen-containing layer. The epitaxial... Agent:

20130056828 - Thin film transistor and manufacturing method thereof: A thin film transistor is provided. A thin film transistor according to an exemplary embodiment of the present invention includes: a substrate; a gate line disposed on the substrate and including a gate electrode; a semiconductor layer disposed on the substrate and including at least a portion overlapping the gate... Agent:

20130056829 - Semiconductor structure and method for manufacturing the same: The present invention relates to a semiconductor structure and a method for manufacturing the same. A semiconductor structure comprises: a semiconductor substrate; a first insulating material layer, a first conductive material layer, a second insulating material layer, a second conductive material layer and an insulating buried layer formed in sequence... Agent:

20130056830 - Semiconductor structure and method: An embodiment is a semiconductor structure. The semiconductor structure comprises at least two gate structures on a substrate. The gate structures define a recess between the gate structures, and the recess is defined by a depth in a vertical direction. The depth is from a top surface of at least... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130056831 - Semiconductor device: A first MIS transistor and a second MIS transistor of the same conductivity type are formed on an identical semiconductor substrate. An interface layer included in a gate insulating film of the first MIS transistor has a thickness larger than that of an interface layer included in a gate insulating... Agent: Panasonic Corporation

20130056832 - Semiconductor device: A first dual-gate electrode includes a gate electrode located on a first active region and having a first silicon film of a first conductivity type and a gate electrode located on a second active region and having a first silicon film of a second conductivity type. A second dual-gate electrode... Agent: Panasonic Corporation

20130056833 - Semiconductor device: A semiconductor device includes: a first field-effect transistor of a first conductivity type formed on a first active region of a semiconductor substrate. The first field-effect transistor includes a first gate insulating film formed on the first active region, and a first gate electrode formed on the first gate insulating... Agent: Panasonic Corporation

20130056834 - Microelectronic device with disconnected semiconductor portions and methods of making such a device: A microelectronic device includes a plurality of disconnected similar semiconducting portions, electrically isolated from each other and forming a semiconductor layer, at a spacing by a constant distance and with a shape parallel to the other portions. The microelectronic device also includes two electrodes arranged in contact with the semiconductor... Agent: Commissariat A L'energie Atomique Et Aux Energies Alternatives

20130056835 - Transistor structures and methods of fabrication thereof: An electronic device is presented, such as a thin film transistor. The device comprises a patterned electrically-conductive layer associated with an active element of the electronic device. The electrically-conductive layer has a pattern defining an array of spaced-apart electrically conductive regions. This technique allows for increasing an electric current through... Agent: Technion Research And Development Foundation Ltd.

20130056837 - Self-aligned insulated film for high-k metal gate device: A method of making an integrated circuit includes providing a semiconductor substrate and forming a gate dielectric over the substrate, such as a high-k dielectric. A metal gate structure is formed over the semiconductor substrate and the gate dielectric and a thin dielectric film is formed over that. The thin... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130056836 - Techniques providing metal gate devices with multiple barrier layers: A semiconductor device with a metal gate is disclosed. An exemplary semiconductor device with a metal gate includes a semiconductor substrate, source and drain features on the semiconductor substrate, a gate stack over the semiconductor substrate and disposed between the source and drain features. The gate stack includes a HK... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130056838 - Sensor chip and method for manufacturing a sensor chip: The present sensor chip comprises a substrate. A plurality of electrode elements is arranged at a first level on the substrate with at least one gap between neighbouring electrode elements. A metal structure is arranged at a second level on the substrate, wherein the second level is different from the... Agent:

20130056839 - Ultrasensitive biosensors: The present invention is a biosensor apparatus that includes a substrate, a source on one side of the substrate, a drain spaced from the source, a conducting channel between the source and the drain, an insulator region, and receptors on a gate region for receiving target material. The receptors are... Agent: University Of Hawaii

20130056840 - Acoustic transducers with perforated membranes: A MEMS device, such as a microphone, uses a fixed perforated plate. The fixed plate comprises an array of holes across the plate area. At least a set of the holes adjacent the outer periphery comprises a plurality of rows of elongate holes, the rows at different distances from the... Agent: Nxp B.v.

20130056841 - Micro-electro-mechanical systems (mems) device and method for fabricating the same: A MEMS device includes a substrate. The substrate has a plurality of through holes in the substrate within a diaphragm region and optionally an indent space from the second surface at the diaphragm region. A first dielectric structural layer is then disposed over the substrate from the first surface, wherein... Agent: Solid State System Co., Ltd.

20130056842 - High voltage photo-switch package module having encapsulation with profiled metallized concavities: A photo-conductive switch package module having a photo-conductive substrate or wafer with opposing electrode-interface surfaces metalized with first metallic layers formed thereon, and encapsulated with a dielectric encapsulation material such as for example epoxy. The first metallic layers are exposed through the encapsulation via encapsulation concavities which have a known... Agent: Lawrence Livermore National Security, LLC

20130056843 - Photomultiplier and manufacturing method thereof: Provided are a photomultiplier and a manufacturing method thereof. The manufacturing method thereof may include forming a mask layer on an active region of a substrate doped with a first conductive type, ion implanting a second conductive type impurity opposite to the first conductive type into the substrate to form... Agent: Electronics And Telecomunications Research Institute

20130056844 - Stepped package for image sensor and method of making same: An image sensor package includes a crystalline handler having opposing first and second surfaces, and a cavity formed into the first surface. At least one step extends from a sidewall of the cavity, wherein the cavity terminates in an aperture at the second surface. A cover is mounted to the... Agent:

20130056845 - Method for forming an isolation trench: A method forms at least one isolation trench in a substrate having an upper surface. The method includes at least: forming, across the substrate thickness, at least one first cavity opened towards the upper surface; totally filling this first cavity with a dielectric material of a first type; forming a... Agent: Stmicroelectronics (crolles 2) Sas

20130056846 - Semiconductor device and method of manufacturing semiconductor device: A semiconductor device includes a first insulating film formed above a semiconductor substrate, a fuse formed above the first insulating film, a second insulating film formed above the first insulating film and the fuse and including an opening reaching the fuse, and a third insulating film formed above the second... Agent: Fujitsu Semiconductor Limited

20130056848 - Inductive loop formed by through silicon via interconnection: The present invention discloses an inductive element formed by through silicon via interconnections. The inductive element formed by means of the special through silicon via interconnection by using through silicon via technology features advantages such as high inductance and density. Moreover, the through silicon via interconnection integrated process forming the... Agent: Fudan University

20130056849 - Semiconductor device: A semiconductor device includes a semiconductor chip having a multilayer interconnect, a first spiral inductor and a second spiral inductor formed in the multilayer interconnect, and an interconnect substrate formed over the semiconductor chip and having a third spiral inductor and a fourth spiral inductor. The third spiral inductor overlaps... Agent: Renesas Electronics Corporation

20130056847 - Small size and fully integrated power converter with magnetics on chip: An integrated circuit has a semiconductor die provided in a first IC layer and an inductor fabricated on a second IC layer. The inductor may have a winding and a magnetic core, which are oriented to conduct magnetic flux in a direction parallel to a surface of a semiconductor die.... Agent: Analog Devices, Inc.

20130056852 - Methods for depositing high-k dielectrics: Methods for depositing high-K dielectrics are described, including depositing a first electrode on a substrate, wherein the first electrode is chosen from the group consisting of platinum and ruthenium, applying an oxygen plasma treatment to the exposed metal to reduce the contact angle of a surface of the metal, and... Agent: Intermolecular, Inc.

20130056851 - Molybdenum oxide top electrode for dram capacitors: A metal oxide bilayer second electrode for a MIM DRAM capacitor is formed wherein the layer of the electrode that is in contact with the dielectric layer (i.e. bottom layer) has a desired composition and crystal structure. An example is crystalline MoO2 if the dielectric layer is TiO2 in the... Agent: Intermolecular, Inc.

20130056850 - Semiconductor device and method of manufacturing semiconductor device: To provide a semiconductor device featuring reduced variation in capacitor characteristics. In the semiconductor device, a protective layer is provided at the periphery of the upper end portion of a recess (hole). This protective layer has a dielectric constant higher than that of an insulating layer placed in the same... Agent: Renesas Electronics Corporation

20130056853 - Horizontal interdigitated capacitor structure with vias: The present disclosure provides a semiconductor device. The semiconductor device includes a substrate having a surface that is defined by a first axis and a second axis perpendicular to the first axis; and a capacitor disposed on the substrate, the capacitor having an anode component that includes a plurality of... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130056854 - Complementary stress liner to improve dgo/avt devices and poly and diffusion resistors: Electron mobility and hole mobility is improved in long channel semiconductor devices and resistors by employing complementary stress liners. Embodiments include forming a long channel semiconductor device on a substrate, and forming a complementary stress liner on the semiconductor device. Embodiments include forming a resistor on a substrate, and tuning... Agent: Globalfoundries Inc.

20130056855 - Method of manufacturing ic comprising a bipolar transistor and ic: Disclosed is an integrated circuit and a method of manufacturing an integrated circuit comprising a bipolar transistor, the method comprising providing a substrate comprising a pair of isolation regions separated by an active region comprising a collector; forming a base layer stack over said substrate; forming a migration layer having... Agent: Nxp B.v.

20130056856 - Semiconductor device capable of reducing plasma induced damage and fabrication method thereof: A method of fabricating a semiconductor device having reduced plasma-induced damage includes providing a p-type semiconductor substrate. The p-type semiconductor substrate has a front surface including the semiconductor device and a back surface. The method further includes doping the back surface with an n-type dopant to form an n-type semiconductor... Agent: Semiconductor Manufacturing International (beijing) Corporation

20130056857 - Device chip and manufacturing method therefor: A manufacturing method for a device chip having a substrate, a device formed on the front side of the substrate, and chip identification information marked inside the substrate includes preparing a device wafer having a base wafer and a plurality of devices formed on the front side of the base... Agent: Disco Corporation

20130056858 - Integrated circuit and method for fabricating the same: A method for fabricating integrated circuit is provided. First, a substrate having a micro electromechanical system (MEMS) region is provided. A first interconnect structure and a hard mask layer have been disposed on the MEMS region in sequence. Next, an anisotropic etching process is performed by using the hard mask... Agent: United Microelectronics Corporation

20130056859 - Semiconductor device having grooves on a side surface and method of manufacturing the same: In one embodiment of a method of manufacturing a semiconductor device, a plurality of substantially columnar trenches are formed along a region for forming a dicing line in a semiconductor substrate having first surface and second surfaces opposed to each other, from the first surface. The substrate is subjected to... Agent: Kabushiki Kaisha Toshiba

20130056860 - Resin-encapsulated semiconductor device: According to one embodiment, a resin-encapsulated semiconductor includes a base a semiconductor chip provided on the base, stress relief members provided on the base and out side semiconductor chip, and each of the stress relief members relieving stress applied to the semiconductor chip.... Agent: Kabushiki Kaisha Toshiba

20130056861 - Semiconductor devices and methods of assembling same: A method of forming a semiconductor device includes affixing a die to a heat sink to form a die and heat sink assembly and then placing the die and heat sink assembly on a support element. A semiconductor device includes a die and heat sink assembly disposed on a support... Agent: Freescale Semiconductor, Inc

20130056862 - Semiconductor device and method of forming a low profile dual-purpose shield and heat-dissipation structure: A semiconductor device has a substrate including a recess and a peripheral portion with through conductive vias. A first semiconductor die is mounted over the substrate and within the recess. A planar heat spreader is mounted over the substrate and over the first semiconductor die. The planar heat spreader has... Agent: Stats Chippac, Ltd.

20130056863 - Integrated circuit packaging system with stiffener and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing a substrate; mounting a stiffener, having a stiffener opening completely through the stiffener, on the substrate; molding an encapsulation on the substrate and directly on an outer upper periphery surface of the stiffener and exposing an inner upper... Agent:

20130056864 - Integrated circuit packaging system with embedded thermal heat shield and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: mounting a bottom integrated circuit on a bottom substrate having a peripheral thermal via connected to a peripheral thermal interconnect; mounting an inner heat shield, having a top planar portion, over the bottom integrated circuit with the inner heat... Agent:

20130056870 - Flip-chip, face-up and face-down wirebond combination package: A microelectronic assembly can include a substrate having oppositely-facing first and second surfaces and a first aperture extending between the first and second surfaces, a first microelectronic element having a surface facing the first surface, a second microelectronic element having a front surface facing the first microelectronic element, signal leads... Agent: Tessera, Inc.

20130056865 - Method of three dimensional integrated circuit assembly: A method of fabricating a three-dimensional integrated circuit comprises attaching a wafer to a carrier, mounting a plurality of semiconductor dies on top of the wafer to form a wafer stack. The method further comprises forming a molding compound layer on top of the wafer, attaching the wafer stack to... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130056869 - Pillar structure having a non-planar surface for semiconductor devices: A conductive pillar for a semiconductor device is provided. The conductive pillar is formed such that a top surface is non-planar. In embodiments, the top surface may be concave, convex, or wave shaped. An optional capping layer may be formed over the conductive pillar to allow for a stronger inter-metallic... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130056868 - Routing under bond pad for the replacement of an interconnect layer: The present invention provides a solder bump structure. In one aspect, the solder bump structure is utilized in a semiconductor device, such as an integrated circuit. The semiconductor device comprises active devices located over a semiconductor substrate, interconnect layers comprising copper formed over the active devices, and an outermost metallization... Agent: Agere Systems LLC

20130056867 - Semiconductor device and method of forming fo-wlcsp with recessed interconnect area in peripheralregion of semiconductor die: A semiconductor device has a temporary layer, such as a dam material or adhesive layer, formed over a carrier. A plurality of recesses is formed in the temporary layer. A first semiconductor die is mounted within the recesses of the temporary layer. An encapsulant is deposited over the first semiconductor... Agent: Stats Chippac, Ltd.

20130056866 - Stacked wafer-level package device: Wafer-level package devices are described that include multiple die packaged into a single wafer-level package device. In an implementation, a wafer-level package device includes a semiconductor device having at least one electrical interconnection formed therein. At least one semiconductor package device is positioned over the first surface of the semiconductor... Agent: Maxim Integrated Products, Inc.

20130056872 - Packaging and function tests for package-on-package and system-in-package structures: A method includes placing a plurality of bottom units onto a jig, wherein the plurality of bottom units is not sawed apart and forms an integrated component. Each of the plurality of bottom units includes a package substrate and a die bonded to the package substrate. A plurality of upper... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130056871 - Thermally enhanced structure for multi-chip device: A multi-chip semiconductor device comprises a thermally enhanced structure, a first semiconductor chip, a second semiconductor chip, an encapsulation layer formed on top of the first semiconductor chip and the second semiconductor chip. The multi-chip semiconductor device further comprises a plurality of thermal vias formed in the encapsulation layer. The... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130056873 - Semiconductor device: According to an embodiment of the present invention, a device includes a substrate, a base body formed on or above the substrate, and a pair of wirings. The base body has a line shape in a plan view and extends along a length direction. The pair of wirings includes first... Agent: Kabushiki Kaisha Toshiba

20130056876 - Composite electrode and method of manufacture thereof: The present invention provides a composite electrode and method of manufacturing such a composite electrode, the method comprising the steps of: providing a first substrate layer with an electrically conducting surface; providing a non-conducting curable material; providing a second substrate layer which has a surface relief pattern defining at least... Agent:

20130056874 - Protection of intermetal dielectric layers in multilevel wiring structures: A semiconductor device is accepted at a stage of its fabrication, at which stage the device includes a diffusion-barrier cap-material (DBCM) layer and an intermetal dielectric layer covering the DBCM layer. The DBCM layer is exposed and it is suitable for removal by an etching procedure in a portion of... Agent: International Business Machines Corporation

20130056875 - Semiconductor device and method for manufacturing the same: A semiconductor device includes: a semiconductor substrate having a main surface; an electrode in a device region on the main surface; a metal wiring on the main surface and having a first end connected to the electrode; an electrode pad outside the device region and spaced from the metal wiring;... Agent: Mitsubishi Electric Corporation

20130056877 - Chip-housing module and a method for forming a chip-housing module: A chip-housing module including a carrier configured to carry one or more chips; the carrier including: a first plurality of openings, wherein each opening of the first plurality of openings is separated by a first pre-determined distance, and is configured to receive a chip connection for providing a voltage lying... Agent: Infineon Technologies Ag

20130056878 - Semiconductor device and method for fabricating the same: A substrate having a first region and second regions disposed on two sides of the first region; a first group of conductive lines extending from the first region to the second regions on the substrate; a second group of conductive lines alternating with the first group of times and extending... Agent:

20130056879 - Semiconductor device and method of forming repassivation layer with reduced opening to contact pad of semiconductor die: A semiconductor wafer has a plurality of first semiconductor die. A first conductive layer is formed over an active surface of the die. A first insulating layer is formed over the active surface and first conductive layer. A repassivation layer is formed over the first insulating layer and first conductive... Agent: Stats Chippac, Ltd.

20130056881 - Discrete three-dimensional memory: The present invention discloses a discrete three-dimensional memory (3D-M). It is partitioned into at least two discrete dice: a memory-array die and a peripheral-circuit die. The memory-array die comprises at least a 3D-M array, which is built in a 3-D space. The peripheral-circuit die comprises at least a peripheral-circuit component,... Agent: Chengdu HaicunIPTechnology LLC

20130056882 - Semiconductor package having support member: Semiconductor packages including a substrate, a plurality of first semiconductor chips stacked on the substrate, a second semiconductor chip interposed between the substrate and a lowermost semiconductor chip among the first semiconductor chips, and a supporting member disposed between the substrate and the lowermost semiconductor chip among the first semiconductor... Agent: Samsung Electronics Co., Ltd.

20130056880 - System in package and method of fabricating same: An assembly has at least one integrated circuit (IC) die fixed in a medium. The assembly has a redistribution layer over the IC die. The redistribution layer has conductors connecting first pads on active faces of the IC die to second pads at an exposed surface of the assembly. A... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20130056883 - Semiconductor device and method of manufacturing the same: According to one embodiment, a semiconductor device includes a base board, a mounting substrate, a semiconductor element, a holder, a holder terminal, a case, a first sealing layer, and a second sealing layer. The mounting substrate is provided on the base board. The semiconductor element is provided on the mounting... Agent: Kabushiki Kaisha Toshiba

20130056884 - Semiconductor device and method of manufacturing the same: A semiconductor device includes at least 4 conductive line groups arranged in parallel over one memory cell block and each configured to include conductive lines. First contact pads may be coupled to the respective ends of the conductive lines of two of the 4 conductive line groups in a first... Agent: Sk Hynix Inc.

20130056885 - Encapsulated semiconductor device and method for manufacturing the same: An encapsulated semiconductor device includes: a first conduction path formative plate (1); a second conduction path formative plate (5) joined to the first conduction path formative plate; a power element (12) bonded to the first conduction path formative plate; a heatsink (14) held by the first conduction path formative plate... Agent: Panasonic Corporation

20130056886 - Method and apparatus of providing overlay: Provided is an apparatus that includes an overlay mark. The overlay mark includes a first portion that includes a plurality of first features. Each of the first features have a first dimension measured in a first direction and a second dimension measured in a second direction that is approximately perpendicular... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.