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Active solid-state devices (e.g., transistors, solid-state diodes) February patent applications/inventions, industry category 02/13

20130048937 - Method for forming resistive switching memory elements: Methods for producing RRAM resistive switching elements having reduced forming voltage include doping to create oxygen deficiencies in the dielectric film. Oxygen deficiencies in a dielectric film promote formation of conductive pathways.... Agent: Intermolecular, Inc.

20130048936 - Phase change memory and method of fabricating same: A fine pitch phase change random access memory (“PCRAM”) design and method of fabricating same are disclosed. One embodiment is a phase change memory (“PCM”) cell comprising a spacer defining a rectangular reaction area and a phase change material layer disposed within the reaction area. The PCM cell further comprises... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130048935 - Phase change memory cells including nitrogenated carbon materials, methods of forming the same, and phase change memory devices including nitrogenated carbon materials: A phase change memory cell comprising a first chalcogenide compound on a first electrode, a first nitrogenated carbon material directly on the first chalcogenide compound, a second chalcogenide compound directly on the first nitrogenated carbon material, and a second nitrogenated carbon material directly on the second chalcogenide compound and directly... Agent: Micron Technology, Inc.

20130048938 - Phase change memory device: An object of the present invention is to provide a technique for suppressing thermal disturbance of a phase change memory device having a three-dimensional structure. In the phase change memory device having a three-dimensional structure, a material having a high thermal conductivity is used as a gate insulation film of... Agent: National Institute Of Advanced Industrial Science And Technology

20130048944 - Light emitting device: Disclosed are a light emitting device, a method of manufacturing the light emitting device, a light emitting device package and a lighting system. The light emitting device includes a first conductive semiconductor layer; an active layer including a quantum well and a quantum barrier and disposed on the first conductive... Agent:

20130048939 - Light emitting device having group iii-nitride current spreading layer doped with transition metal or comprising transition metal nitride: A light-emitting device, such as a light-emitting diode (LED), has a group III-nitride current spreading layer which is either doped with transition metal, or comprises alternating transition metal nitride layer and group III-nitride layer. Also provided is a light-emitting device, such as a light-emitting diode (LED), having a quantum well... Agent: Invenlux Limited

20130048945 - Light-emitting semiconductor structure and method for fabricating light-emitting diode device: A method for fabricating a light-emitting device is provided. The method includes: providing a substrate; forming a sacrificial dielectric layer on the substrate, wherein the sacrificial dielectric layer is a structure containing voids; forming a buffer layer on the sacrificial dielectric layer; forming an epitaxial light-emitting structure on the buffer... Agent: Lextar Electronics Corporation

20130048946 - Multilayer nanocrystal structure and method for producing the same: Disclosed herein is a multilayer nanocrystal structure comprising a nanocrystal alloy core comprising two or more nanocrystals and including an alloy interlayer formed at an interface between the two or more nanocrystals, and one or more layers of nanocrystal shells formed sequentially on the surface of the nanocrystal alloy core,... Agent: Samsung Electronics Co., Ltd.

20130048942 - Nitride semiconductor template and light-emitting diode: A nitride semiconductor template includes a substrate, and a group III nitride semiconductor layer having an oxygen-doped layer formed on the substrate, and a silicon-doped layer formed on the oxygen-doped layer. A total thickness of the group III nitride semiconductor layer is not smaller than 4 μm and not greater... Agent: Hitachi Cable, Ltd.

20130048943 - Organic light emitting diode and fabrication method thereof: There are provided an organic light emitting diode and a fabrication method thereof. The organic light emitting diode includes: an anode formed on a substrate; a thin film layer formed on the anode and including graphene; a light emitting polymer layer formed on the thin film layer; and a cathode... Agent: Samsung Electro-mechanics Co., Ltd.

20130048941 - Solid state light emitting semiconductor structure and epitaxy growth method thereof: A solid state light emitting semiconductor structure and an epitaxy growth method thereof are provided. The method includes the following steps: A substrate is provided. A plurality of protrusions separated from each other are formed on the substrate. A buffer layer is formed on the protrusions, and fills or partially... Agent: Lextar Electronics Corporation

20130048940 - Solid state radiation transducers and methods of manufacturing: Solid state radiation transducer (SSRT) assemblies and method for making SSRT assemblies. In one embodiment, a SSRT assembly comprises a first substrate having an epitaxial growth material and a radiation transducer on the first substrate. The radiation transducer can have a first semiconductor material grown on the first substrate, a... Agent: Micron Technology, Inc.

20130048947 - Methods to fabricate vertically oriented anatase nanowire arrays on transparent conductive substrates and applications thereof: The present invention relates to growth of vertically-oriented crystalline nanowire arrays upon a transparent conductive or other substrate for use in 3rd generation photovoltaic and other applications. A method of growing crystalline anatase nanowires includes the steps of: deposition of titania onto a substrate; conversion of the titania into titanate... Agent:

20130048948 - Inverter logic devices including graphene field effect transistor having tunable barrier: Inverter logic devices include a gate oxide on a back substrate, a first graphene layer and a second graphene layer separated from each other on the gate oxide, a first electrode layer and a first semiconductor layer separated from each other on the first graphene layer, a second electrode layer... Agent: Samsung Electronics Co., Ltd.

20130048949 - Carbonaceous nanomaterial-based thin-film transistors: Disclosed are thin film transistor devices incorporating a thin film semiconductor derived from carbonaceous nanomaterials and a dielectric layer composed of an organic-inorganic hybrid self-assembled multilayer.... Agent:

20130048951 - Graphene switching device having tunable barrier: According to example embodiments, a graphene switching devices has a tunable barrier. The graphene switching device may include a gate substrate, a gate dielectric on the gate substrate, a graphene layer on the gate dielectric, a semiconductor layer and a first electrode sequentially stacked on a first region of the... Agent: Samsung Electronics Co., Ltd.

20130048952 - Hole doping of graphene: An article includes a layer of graphene having a first work function; and a metal oxide film disposed on the layer of graphene, the metal oxide film having a second work function greater than the first work function. Electrons are transferred from the layer of graphene to the metal oxide... Agent: National University Of Singapore

20130048950 - On-demand nanoelectronics platform: A reconfigurable device includes a first insulating layer, a second insulating layer, and a nanoscale quasi one- or zero-dimensional electron gas region disposed at an interface between the first and second insulating layers. The device is reconfigurable by applying an external electrical field to the electron gas, thereby changing the... Agent: University Of Pittsburgh-of The Commonwealth System Of Higher Education

20130048956 - Compound for electroluminescent device and organic electroluminescent devices using the same: r

20130048965 - Condensed polycyclic compound and organic light emitting element including the same: A condensed polycyclic compound which emits green light and which has a high chemical stability and an organic light emitting element including the same are provided. A condensed polycyclic compound represented by the general formula [1] or [2] described in claim 1 is provided. In the formula [1] and [2],... Agent: Canon Kabushiki Kaisha

20130048966 - Condensed polycyclic compound and organic light emitting element including the same: An organic light emitting element which realizes a high efficiency and a long light emission life is provided. An organic compound represented by the general formula [1] described in claim 1 is provided. In the formula [1], R1 to R22 are each independently selected from the group consisting of a... Agent: Canon Kabushiki Kaisha

20130048963 - Cyclometallated tetradentate pt (ii) complexes: Novel phosphorescent tetradentate platinum (II) compounds are provided. The compounds contain an isoimidazole moiety, optionally further substituted with a twisted aryl. These compounds may be advantageously used in OLEDs.... Agent: Universal Display Corporation

20130048968 - Display apparatus and image pickup apparatus: A first light-emitting layer of a first organic electroluminescent element is disposed in common to a second organic electroluminescent element, a second light-emitting layer of the second organic electroluminescent element is disposed in contact with the first light-emitting layer and in the cathode side, and the first light-emitting layer is... Agent: Canon Kabushiki Kaisha

20130048969 - Display apparatus and image pickup apparatus: A first light-emitting layer of a first organic electroluminescent element is disposed in common to a second organic electroluminescent element, a second light-emitting layer of the second organic electroluminescent element is disposed in contact with the first light-emitting layer and in the cathode side, and the first light-emitting layer contains... Agent: Canon Kabushiki Kaisha

20130048970 - Display apparatus and image pickup apparatus: A first light-emitting layer of a first organic electroluminescent element is disposed in common to a second organic electroluminescent element, a second light-emitting layer of the second organic electroluminescent element is disposed in contact with the first light-emitting layer and in the anode side, and the second light-emitting layer is... Agent: Canon Kabushiki Kaisha

20130048959 - Donor substrates, methods of manufacturing donor substrates, organic light emitting display devices and methods of manufacturing organic light emitting display devices: A donor substrate includes a base layer, a light to heat conversion layer on the base layer, an interlayer on the light to heat conversion layer, a low molecular weight transfer layer on the interlayer and an organic transfer layer on the low molecular weight transfer layer. The low molecular... Agent: Samsung Mobile Display Co., Ltd.

20130048976 - Electrode foil and organic device: There are provided an electrode foil which has all the functions of a supporting base material, an electrode and a reflective layer and also has a superior thermal conductivity; and an organic device using the same. The electrode foil comprises a metal foil, wherein the electrode foil has at least... Agent: Mitsui Mining & Smelting Co., Ltd.

20130048955 - Heterocyclic compound and organic light-emitting device containing the same: A heterocyclic compound represented by one of Formulae 1-4 below and an organic light-emitting device including an organic layer that includes the heterocyclic compound. The heterocyclic compounds have excellent light-emitting characteristics and excellent electron transporting characteristics, and thus may be used as electron injecting materials or electron transporting materials suitable... Agent: Samsung Mobile Display Co., Ltd.

20130048971 - Heterocyclic compound, light-emitting element, light-emitting device, electronic device, and lighting device: Provided is a novel heterocyclic compound which can be used in a light-emitting layer of a light-emitting element as a host material in which a light-emitting substance is dispersed. A heterocyclic compound represented by a general formula (G1) is provided. Any one of R1 to R10 represents a substituent represented... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130048957 - Light emitting device: Provided is a light emitting device having a mechanism capable of efficiently dissipating heat kept in the device to the outside. The light emitting device includes: a first substrate including a heat radiation layer; a second substrate exhibiting light transmittance; and a plurality of organic EL elements provided, between the... Agent: Sumitomo Chemical Company, Limited

20130048967 - Light-emitting device, electronic device, lighting device, and method for manufacturing the light-emitting device: A light-emitting device in which deterioration of an organic EL element due to impurities such as moisture or oxygen is suppressed is provided. The light-emitting device includes a first substrate and a second substrate facing each other, a light-emitting element provided over the first substrate, a first sealant provided so... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130048964 - Light-emitting element, light-emitting device, electronic device, lighting device, and novel organic compound: A light-emitting element includes an EL layer between a pair of electrodes. The EL layer contains a first compound and a second compound. The first compound is a phosphorescent iridium metal complex having a LUMO level of greater than or equal to −3.5 eV and less than or equal to... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130048972 - Method of manufacturing laminated body and laminated body: A laminated body includes a lower electrode formed on a substrate and a basic insulating film which is formed above the lower electrode and covers the lower electrode on the substrate, in which the lower electrode has a film thickness reduction section in which the film thickness of the lower... Agent: Toppan Printing Co., Ltd.

20130048954 - Organic electro-luminescence display panel and method for fabricating same: An organic electro-luminescence display panel and a method for fabricating the same is described which can prevent the display panel from degrading. The organic electro-luminescence display panel includes a drive thin film transistor formed on a substrate, a first electrode connected to the drive thin film transistor, a bank insulating... Agent: Lg Display Co., Ltd.

20130048962 - Organic electroluminescent element, method for producing same, and device for producing same: Problems to be solved of the present invention are to provide a method for producing an organic electroluminescent device capable of producing an organic electroluminescent device having long lifetime, an organic electroluminescent device having long lifetime, a planar light source, an illumination apparatus and a display apparatus each having long... Agent: Sumitomo Chemical Company, Limited

20130048961 - Organic light emitting device with enhanced emission uniformity: A light emitting device with high light emission uniformity is disclosed. The device contains a first electrically conductive layer having a positive polarity and an electrically conductive uniformity enhancement layer in contact with the first electrically conductive layer. The device also contains a second electrically conductive layer having a negative... Agent: Univeral Display Corporation

20130048973 - Organic light-emitting diode comprising at least two electroluminescent layers: The invention provides an organic light-emitting diode which includes at least two electroluminescent layers (ELR, ELB), both of which are fluorescent or phosphorescent and emit at different wavelengths, as well as a hole- and electron-conducting buffer layer (T) arranged between the electroluminescent layers. The buffer layer is a bi-layer having... Agent: Commissariat A L'energie Atomique Et Aux Energies Alternatives

20130048974 - Organic luminescent materials, coating solution using same for organic emitting layer, organic light emitting device using coating solution and light source device using organic light emitting device: It is an object of the present invention to provide an organic light-emitting device which can emit white light by easily controlling dopant concentrations. The organic light-emitting device has a first electrode (112) and second electrode (111) which hold a light-emitting layer (113) in-between, wherein the light-emitting layer contains a... Agent:

20130048975 - Phenanthrocarbazole compound, and organic electroluminescent device using same: The present invention relates to a material for an organic electroluminescent device, including a phenanthrocarbazole-based compound having a specific structure, and an organic electroluminescent device including the same. More specifically, the phenanthrocarbazole-based compound is applied as a material for a phosphorescent and fluorescent organic electroluminescent device, thereby providing an organic... Agent: Doosan Corporation

20130048953 - Photo luminescence diode and photoluminescence diplay having the same: A photoluminescence diode which may decrease a driving voltage may include an anode, a cathode, an emission layer interposed between the anode and the cathode, and an electron accepting layer interposed between the emission layer and the cathode and including one material selected from fullerene, methanofulleren, doped fullerene, doped methanofulleren,... Agent: Samsung Mobile Display Co., Ltd.

20130048960 - Photoelectric conversion substrate, radiation detector, and radiographic image capture device: A photoelectric conversion substrate includes: plural pixels, each provided with a sensor portion and a switching element that are formed on the substrate, the sensor portion including a photoelectric conversion element that generates charge according to illuminated light, and the switching element reading the charge from the sensor portion; a... Agent: Fujifilm Corporation

20130048958 - Quinacridone derivative, and photoactive layer and photoelectric conversion device including same: A quinacridone derivative may be represented by Chemical Formula 1, and a photoactive layer and photoelectric conversion device may include the same.... Agent: Samsung Electronics Co., Ltd.

20130048977 - Semiconductor device and manufacturing method thereof: To provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and has high reliability. To provide a method for manufacturing the semiconductor device. The semiconductor device includes a gate electrode, a gate insulating film formed over the gate electrode, an oxide semiconductor film formed over the... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130048978 - Semiconductor device and method for manufacturing the same: Provided is a semiconductor device including an oxide semiconductor and having stable electrical characteristics. Specifically, a semiconductor device including an oxide semiconductor and including a gate insulating film with favorable characteristics is provided. Further, a method for manufacturing the semiconductor device is provided. The semiconductor device includes a gate electrode,... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130048982 - Bond pad monitoring structure and related method of detecting significant alterations: A passive bond pad condition sense structure may be configured to be electrically stimulated and tested for detecting an anomalous or altered electrical characteristic caused by stress or aging of the bond pad capacitively coupled to it. The related bond pad condition testing or monitoring system may include relatively simple... Agent: Stmicroelectronics S.r.i.

20130048981 - Electrically measurable on-chip ic serial identifier and methods for producing the same: An apparatus comprising an integrated circuit, an interconnect layer within said integrated circuit, and one or more connections. The integrated circuit may be configured to provide an electrically measurable interconnect pattern by enabling one or more of a plurality of components. The one or more connections may each configured to... Agent:

20130048980 - Integrated circuits with leakage current test structure: An integrated circuit includes a seal ring structure disposed around a circuit that is disposed over a substrate. A first pad is electrically coupled with the seal ring structure. A leakage current test structure is disposed adjacent to the seal ring structure. A second pad electrically coupled with the leakage... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130048983 - Methods of forming structures with a focused ion beam for use in atomic force probing and structures for use in atomic force probing: Methods for forming structures to use in atomic force probing of a conductive feature embedded in a dielectric layer and structures for use in atomic force probing. An insulator layer is formed on the dielectric layer such that the conductive feature is covered. A contact hole penetrates from a top... Agent: International Business Machines Corporation

20130048979 - Test structure and method for determining overlay accuracy in semiconductor devices using resistance measurement: Provided is a test pattern structure for determining overlay accuracy in a semiconductor device. The test pattern structure includes one or more resistor structures formed by patterning a lower silicon layer. Each includes a zigzag portion with leads at different spatial locations. An upper pattern is formed and includes at... Agent: Wafertech, LLC

20130048984 - Semiconductor devices and methods of manufacturing the same: A method for patterning a multi-layer film in a semiconductor device is provided. The semiconductor device comprises a substrate and a multi-layer film on the substrate. The multi-layer film comprises N conductive layers and N dielectric layers alternatingly stacked, and 2N contact plugs. The Nth dielectric layer is formed at... Agent: Macronix International Co., Ltd.

20130048985 - Metal-induced crystallization of continuous semiconductor thin films controlled by a diffusion barrier: A device and a method of forming a continuous polycrystalline Ge film having crystalline Ge islands is provided that includes depositing an amorphous Ge (a-Ge) layer on a substrate, oxidizing the top surface of the a-Ge layer to form a GeOx layer, depositing a seed layer of Al on the... Agent:

20130048988 - Nanopillar e-fuse structure and process: Techniques for incorporating nanotechnology into electronic fuse (e-fuse) designs are provided. In one aspect, an e-fuse structure is provided. The e-fuse structure includes a first electrode; a dielectric layer on the first electrode having a plurality of nanochannels therein; an array of metal silicide nanopillars that fill the nanochannels in... Agent: International Business Machines Corporation

20130048986 - Organic light emitting diode display and manufacturing method thereof: An OLED display includes: a first pixel including a first pixel electrode of a pixel electrode, a second pixel including a second pixel electrode of the pixel electrode, and a third pixel including a third pixel electrode of the pixel electrode; a resonance assistance layer on the first pixel electrode;... Agent:

20130048987 - P-i-n structures and methods for forming p-i-n structures having an i-layer formed via hot wire chemical vapor deposition (hwcvd): Embodiments of the present invention provide p-i-n structures and methods for forming p-i-n structures useful, for example, in photovoltaic cells. In some embodiments, a method for forming a p-i-n structure on a substrate may include forming a bi-layer p-type layer on the substrate by: depositing a microcrystalline p-type layer atop... Agent: Applied Materials, Inc.

20130048989 - Touch substrate and method of manufacturing the same: A touch substrate includes a base substrate, a sensing element and a switching element. The sensing element is disposed over the base substrate, senses infrared light, and includes a sensing semiconductor pattern. The switching element is electrically connected to the sensing element, includes a material substantially the same as a... Agent:

20130048991 - Display and method of manufacturing the same: A display, a method of manufacturing the display, and an electronic apparatus are provided. The display includes a resin, a transistor; and a light shielding material positioned between the resin and the transistor. The light shielding material is configured to suppress an incidence of light on the transistor. Light is... Agent: Sony Corporation

20130048996 - Display device and manufacturing process of display device: Provided a display device including a thin film transistor. The thin film transistor includes a gate electrode, a gate insulating layer which covers the gate electrode, an oxide semiconductor film above the gate insulating layer, a source electrode and a drain electrode which are respectively provided in contact with a... Agent: Japan Display East Inc.

20130048997 - Display device having a shield: The instant application describes a display device that includes a substrate; a gate electrode provided on the substrate; a gate insulating film provided on the gate electrode; a semiconductor layer provided on the gate insulating film; a source electrode and a drain electrode provided on the semiconductor layer; a protective... Agent:

20130048993 - Electronic device and semiconductor substrate: A semiconductor substrate includes: a thin-film transistor including an organic semiconductor layer; and a light absorption-transmission layer provided in a pathway that leads external light to the organic semiconductor layer. The light absorption-transmission layer absorbs light of a wavelength range that includes at least a part of a light absorption... Agent: Sony Corporation

20130048995 - Light-emitting module, light-emitting device, method of manufacturing the light-emitting module, and method of manufacturing the light-emitting device: A highly reliable light-emitting module including an organic EL element or a light-emitting device using a highly reliable light-emitting module including an organic EL element is provided. Alternatively, a method of manufacturing a highly reliable light-emitting module including an organic EL element, or a method of manufacturing a light-emitting device... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130048994 - Low-resistance conductive line, thin film transistor, thin film transistor panel, and method for manufacturing the same: A Thin Film Transistor (TFT) has a capping layer disposed on the surface of at least one of source and drain electrodes on a substrate, a protective film disposed on the capping layer, and a conductive layer electrically connected to the capping layer via a contact hole formed in the... Agent: Samsung Display Co., Ltd.

20130048999 - Semiconductor device, active matrix substrate, and display device: A semiconductor device (18) includes: a gate electrode (102) formed on a substrate (101); a semiconductor layer (104) formed above the gate electrode (102) and including a source region, a drain region, and a channel region; a source electrode (106) connected to the source region above the semiconductor layer (104);... Agent:

20130048998 - Semiconductor device, thin film transistor substrate, and display apparatus: A semiconductor device (ST) includes a substrate (11), a gate electrode (12b), a gate insulating film (13b), an oxide semiconductor film (14b) including a channel part (14bc) formed in a position facing the gate electrode (12b), a source electrode (15bs), and a drain electrode (15bd). The source electrode (15bs) and... Agent:

20130048990 - Thin film transistor array substrate and method of manufacturing the same: A substrate includes an active layer, a gate electrode, source and drain electrodes, first and second insulating layers, a first line and a second line on a same layer as the gate electrode, the first line and the second line include a same material as the gate electrode and are... Agent:

20130048992 - Transistor and method of producing same, and display: A transistor includes: a control electrode; an active layer facing the control electrode; a first electrode and a second electrode electrically connected to the active layer; and an insulating layer provided between the control electrode and the active layer, the insulating layer containing diallyl isophthalate resin.... Agent: Sony Corporation

20130049000 - Semiconductor device and method of making the same: A semiconductor device and method of making the same are provided. The method of forming semiconductor device uses non-implant process to form doped layers, and thus is applicable for large-size display panel. The method of forming semiconductor device uses annealing process to reduce the resistance of the doped layers, which... Agent:

20130049001 - Semiconductor device and method for manufacturing the same: It is an object to manufacture and provide a highly reliable display device including a thin film transistor with a high aperture ratio which has stable electric characteristics. In a manufacturing method of a semiconductor device having a thin film transistor in which a semiconductor layer including a channel formation... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130049003 - Organic light emitting display device and method for manufacturing the same: An OLED device is disclosed. The OLED device includes: a substrate defined into an active area in which a plurality of pixels are formed in a matrix shape, a GIP (gate-in-panel) area in which drive elements are formed, a ground contact area, and a seal line area; a thin film... Agent:

20130049002 - Thin film transistor of display panel and method of making the same: A thin film transistor (TFT) includes a gate electrode, a gate insulating layer, a first protective pattern, a second protective pattern, a source electrode, a drain electrode, a semiconductor channel layer, and a passivation layer. The first protective pattern and the second protective pattern are disposed on the gate insulating... Agent:

20130049004 - Thin-film transistor array manufacturing method, thin-film transistor array, and display device: A method of manufacturing a thin-film transistor array includes: forming a gate insulating layer on gate electrodes; forming an amorphous silicon layer on the gate insulating layer; generating a crystalline silicon layer by crystallizing the amorphous silicon layer; and forming source electrodes and drain electrodes. The thicknesses of the gate... Agent: Panasonic Corporation

20130049012 - Deposition methods for the formation of iii/v semiconductor materials, and related structures: Methods of forming ternary III-nitride materials include epitaxially growing ternary III-nitride material on a substrate in a chamber. The epitaxial growth includes providing a precursor gas mixture within the chamber that includes a relatively high ratio of a partial pressure of a nitrogen precursor to a partial pressure of one... Agent: Soitec

20130049005 - Devices having removed aluminum nitride sections: One or more layers are epitaxially grown on a bulk crystalline AlN substrate. The epitaxial layers include a surface which is the initial surface of epitaxial growth of the epitaxial layers. The AlN substrate is substantially removed over a majority of the initial surface of epitaxial growth.... Agent: Palo Alto Research Center Incorporated

20130049006 - Gold micromask for roughening to promote light extraction in an led: Gold is used as a micromask to roughen a gallium nitride (GaN) surface in an LED device. In one example, a mesh of ITO (Indium Tin Oxide) is formed on a GaN layer. The mesh has holes that extend down to the GaN. A layer of silicon dioxide is deposited... Agent: Bridgelux, Inc.

20130049010 - High density gallium nitride devices using island topology: A Gallium Nitride (GaN) series of devices—transistors and diodes are disclosed—that have greatly superior current handling ability per unit area than previously described GaN devices. The improvement is due to improved layout topology. The devices also include a simpler and superior flip chip connection scheme and a means to reduce... Agent: Gan Systems Inc.

20130049008 - Light emitting device and light emitting device package: A light emitting device according to the embodiment includes a support substrate; a first light emitting structure disposed on the support substrate and including a first conductive type first semiconductor layer, a first active layer, and a second conductive type second semiconductor layer; a first reflective electrode under the first... Agent:

20130049011 - Optoelectronic device with upconverting luminophoric medium: A microelectronic device that in operation generates or includes component(s) that generate heat, in which the device comprises a heat conversion medium that converts such heat into a light emission having a shorter wavelength than such heat, to thereby cool the device and dissipate the unwanted heat by such light... Agent: Cree, Inc.

20130049009 - Substrate for vertical light-emitting diode: A multi-layer substrate for a vertical light-emitting diode (LED) includes a conductive and reflective base substrate and an n-type gallium nitride (GaN) layer formed on the base substrate.... Agent: Samsung Corning Precision Materials Co., Ltd.

20130049007 - Wide-bandgap semiconductor device: A wide-bandgap semiconductor device includes: a semiconductor substrate made of a semiconductor material having a bandgap larger than 1.42 eV; a semiconductor layer on the semiconductor substrate and made of a semiconductor material having a bandgap larger than 1.42 eV; and an active region in the semiconductor layer and including... Agent: Mitsubishi Electric Corporation

20130049014 - Epitaxial silicon carbide single crystal substrate and process for producing the same: Provided is an epitaxial silicon carbide single-crystal substrate in which a silicon carbide epitaxial film having excellent in-plane uniformity of doping density is disposed on a silicon carbide single-crystal substrate having an off angle that is between 1° to 6°. The epitaxial film is grown by repeating a dope layer... Agent: Nippon Steel Corporation

20130049013 - Semiconductor device, electro-optic device, power conversion device, and electronic apparatus: A semiconductor device includes a silicon substrate, a silicon carbide film formed on the silicon substrate, a mask member formed on a surface of the silicon carbide film, and having an opening section, single-crystal silicon carbide films each having grown epitaxially from the silicon carbide film exposed in the opening... Agent: Seiko Epson Corporation

20130049015 - Leds and methods for manufacturing the same: A light emitting diode (LED) is disclosed. The LED includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, and a patterned structure. The first semiconductor layer having first and second regions is positioned on the substrate, wherein the first region is thicker than the second... Agent: Lextar Electronics Corporation

20130049016 - Discontinuous patterned bonds for semiconductor devices and associated systems and methods: Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of... Agent: Micron Technology, Inc.

20130049017 - Display apparatus and image pickup apparatus: A first light-emitting layer of a first organic electroluminescent element is disposed in common to a second organic electroluminescent element, a second light-emitting layer of the second organic electroluminescent element is disposed in contact with the first light-emitting layer and in the cathode side, and the second light-emitting layer is... Agent: Canon Kabushiki Kaisha

20130049019 - Display device: Exemplary embodiments of the described technology relate generally to display devices including dye-sensitized solar cells. The display device according to an exemplary embodiment includes a display element for displaying an image, and a dye-sensitized solar cell for converting light into electricity to offset the power consumption of the display element.... Agent:

20130049018 - Optical/electrical transducer using semiconductor nanowire wicking structure in a thermal conductivity and phase transition heat transfer mechanism: An optical/electrical transducer device has housing, formed of a thermally conductive section and an optically transmissive member. The section and member are connected together to form a seal for a vapor tight chamber. Pressure within the chamber configures a working fluid to absorb heat during operation of the device, to... Agent: AblIPHolding LLC

20130049020 - Solid state transducers with state detection, and associated systems and methods: Solid state transducers with state detection, and associated systems and methods are disclosed. A solid state transducer system in accordance with a particular embodiment includes a support substrate and a solid state emitter carried by the support substrate. The solid state emitter can include a first semiconductor component, a second... Agent: Micron Technology, Inc.

20130049025 - Led package device: An LED package device having a dam located on a substrate is provided, by which two regions are defined on the substrate. Two LED dies are respectively disposed on the two regions and separated by the dam; therefore, the LED package device has an enhanced intensity of the lateral-emitting light... Agent: Advanced Optoelectronic Technology, Inc.

20130049030 - Light emitting device and light emitting device package: A light emitting device according to the embodiment includes a first light emitting structure including a first conductive type first semiconductor layer, a first active layer under the first conductive type first semiconductor layer, and a second conductive type second semiconductor layer under the first active layer; a first reflective... Agent:

20130049023 - Light emitting device package and lighting system: Disclosed are a light emitting device package and a lighting system. The light emitting device package includes a body including a cavity, at least one light emitting device in the cavity, a resin member filled in the cavity while covering the light emitting device, and a reflective layer on a... Agent: Lg Innotek Co., Ltd.

20130049033 - Light emitting diode package array and method for fabricating light emitting diode package: A light emitting diode (LED) package includes: an array substrate; a plurality of LEDs mounted on the array substrate and arranged in rows and columns; a plurality of wavelength conversion units disposed in a light path of light emitted from each of the plurality of LEDs to convert the wavelength... Agent:

20130049027 - Light emitting element, light emitting element array, optical writing head, and image forming apparatus: A light emitting element includes a semiconductor substrate, and an island structure formed on the semiconductor substrate. The island structure includes a light-emitting-unit thyristor and a current confinement structure. The light-emitting-unit thyristor includes stacked semiconductor layers having a pnpn structure. The current confinement structure includes a high-resistance region and a... Agent: Fuji Xerox Co. Ltd.

20130049034 - Light-emitting device: This disclosure discloses a light-emitting device. The light-emitting device comprises: a substrate; a first light-emitting stack comprising a first active layer; a bonding interface formed between the substrate and the first light-emitting stack; and a contact structure formed between the first light-emitting stack and the bonding interface and comprising a... Agent:

20130049031 - Light-emitting device, light-emitting module, and lamp: A light-emitting device which emits light omnidirectionally is provided. A light-emitting device according to the present invention includes: a package which is translucent; an LED provided in a recess in the package; and a sealing member for sealing the LED and packaging the recess; and the recess includes a bottom... Agent: Panasonic Corporation

20130049022 - Optoelectronic device package, array and method of fabrication: An optoelectonice device package, an array of optoelectronic device packages and a method of fabricating an optoelectronic device package. The array includes a plurality of optoelectronic device packages, each enclosing an optoelectronic device, and positioned in at least one row. Each package including two geometrically parallel transparent edge portions and... Agent: General Electric Company

20130049024 - Organic electroluminescence display device: An OLED device adapted to enhance reliability and light-emitting efficiency is disclosed. The disclosed OLED device includes: a first electrode; an emission layer formed on the first electrode; a second electrode formed on the emission layer; and an electron injection layer disposed on the emission layer, configure to be in... Agent:

20130049032 - Organic electroluminescence display device, method of manufacturing organic electroluminescence display device, and electronic system: An organic electroluminescence display device includes: a light emission region including a plurality of pixels on a drive substrate, wherein each of the pixels includes, in order from a side close to the drive substrate, a first electrode, a functional layer, and a second electrode, the first electrode is provided... Agent: Sony Corporation

20130049028 - Organic light emitting display device having reflection structure and method of manufacturing organic light emitting display device having reflection structure: An organic light emitting display device may include a substrate having a switching device, a first electrode including a reflection structure and being electrically connected to the switching device, a pixel defining layer disposed on the first electrode to define a luminescent region and a nonluminescent region, an organic light... Agent: Samsung Mobile Display Co., Ltd

20130049029 - Organic light-emitting display device and method of manufacturing the same: An organic light-emitting display device includes a gate electrode, a source electrode, and a drain electrode on a substrate, a gate interconnection line connected to the gate electrode, a source and drain interconnection line connected to the source and drain electrodes, a first test pad electrically connected to the source... Agent:

20130049026 - Semiconductor element and display device using the same: A semiconductor having an active layer; a gate insulating film in contact with the semiconductor; a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the active layer; a photosensitive organic resin film formed on the first nitride insulating film;... Agent: Semiconductor Energy Laboratory Co., Ltd

20130049021 - White leds with emission wavelength correction: Methods for fabricating semiconductor devices such as LED chips with emission wavelength correction and devices fabricated using these methods. Different embodiments include sequential coating methods that provide two or more coatings or layers of conversion material over LEDs, which can be done at the wafer level. The methods are particularly... Agent: Cree, Inc.

20130049035 - Light emitting device: There is provided a light emitting device which enables a color display with good color balance. A triplet compound is used for a light emitting layer of an EL element that emits red color, and a singlet compound is used for a light emitting layer of an EL element that... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130049036 - Light emitting device: A light emitting device includes a conductive substrate, a plurality of light emitting cells disposed on the conductive substrate, wherein each of the plurality of light emitting device cells includes a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second... Agent:

20130049038 - Light emitting device and light emitting device package: Disclosed is a light emitting device. The light emitting device includes a support substrate, a first light emitting structure provided on the support substrate and comprising a first conductive type first semiconductor layer, a first active layer, and a second conductive type second semiconductor layer, a first metal layer under... Agent:

20130049037 - Organic light emitting diode display and method for manufacturing the same: An organic light emitting diode display includes a substrate; a first capacitor electrode provided over the substrate and including polysilicon; an insulating layer provided over the first capacitor electrode; and a second capacitor electrode provided over the insulating layer and including a first lower metal layer overlapping with the first... Agent: Samsung Mobile Display Co., Ltd.

20130049046 - Color tunable organic light emitting diode: The inventive concept provides an organic light emitting diode that can change its color. A color change is embodied by a micro cavity effect caused by a metal thin film partly formed on a positive pole. The organic light emitting diode includes a positive pole, an organic luminous layer and... Agent: Electronics And Telecomunications Research Institute

20130049055 - Compound semiconductor light-emitting element: The present disclosure relates to a compound semiconductor light-emitting element comprising: a frame; an adhesive provided on the frame; a light-emitting part which is secured in position on the frame by means of the adhesive and which includes a substrate, a first compound semiconductor layer formed on the substrate and... Agent: Semicon Light Co., Ltd.

20130049043 - Engineered substrates for semiconductor devices and associated systems and methods: Engineered substrates for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a transducer structure having a plurality of semiconductor materials including a radiation-emitting active region. The device further includes an engineered substrate having a first material and a second material, at least one of... Agent: Micron Technology, Inc.

20130049058 - Led module: An LED module A1 includes a first lead 1 with a mount surface 12a at a die-bonding portion 12, a second lead 2 with a wire-bonding portion 22 and having a thickness direction corresponding to that of the lead 1, and an LED chip 3 on the mount surface... Agent: Rohm Co., Ltd.

20130049048 - Led unit and illumination device using the same: An LED unit includes a housing accommodating a wiring substrate mounted an LED, the housing including a light projecting portion for projecting light emitted from the LED, and wiring lines electrically connected to the wiring substrate. First and second lead-out portions, for leading out the wiring lines, are respectively provided... Agent: Panasonic Corporation

20130049042 - Light emitting device: This disclosure discloses a light-emitting device. The light-emitting device comprises: a substrate; a first light-emitting stack comprising a first active layer; a bonding interface formed between the substrate and the first light-emitting stack; and a contact structure formed on the first light-emitting stack and comprising first, second and third contact... Agent:

20130049056 - Light emitting device and light unit: Provided are a light emitting device and a light unit. The light emitting device includes a light emitting structure layer comprising a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer; a first... Agent: Lg Innotek Co., Ltd.

20130049045 - Light emitting device package: Embodiments disclose a light emitting device package including an insulating layer, a first lead frame and a second lead frame disposed on the insulating layer electrically separate from each other, a light emitting device disposed on the second lead frame electrically connected to the first lead frame and the second... Agent:

20130049049 - Light emitting device package: A light emitting device package includes: a package main body having a chip mounting region surrounded by side walls; lead frames spaced apart from one another, at least one portion thereof being positioned in the chip mounting region; a light emitting device mounted on the chip mounting region; a wire... Agent: Samsung Electronics Co., Ltd.

20130049057 - Light emitting device package and light unit having the same: Disclosed is an LED package. The LED package includes a package body, a first frame and a second frame on the package body and a light emitting device chip on the first frame. The first frame is separated from the second frame, and the first frame includes a bottom frame... Agent: Lg Innotek Co., Ltd.

20130049044 - Light emitting device package and lighting system having the same: Disclosed are a light emitting device package and a lighting system including the same. The light emitting device package includes a first lead frame and a second lead frame disposed on an insulating layer and electrically separated from each other by a separation part, and a light emitting device disposed... Agent: Lg Innotek Co., Ltd.

20130049047 - Light emitting diode module and method for manufacturing the same: A light emitting diode (LED) module includes a substrate, an LED disposed on the substrate, a phosphor layer disposed on the LED, and a lens disposed on the substrate. The substrate has a recess defined therein. The lens is fastened to the substrate through the recess. A manufacturing method for... Agent:

20130049051 - Light-emitting device: Disclosed is a light-emitting device comprising: a semiconductor stack layer; a reflective layer on the semiconductor stack layer; a first buffer layer comprising a compound comprising a metallic element and a non-metallic element on the reflective layer; a first electrode; and an electrical insulating layer disposed between the first buffer... Agent: Epistar Corporation

20130049054 - Light-reflective anisotropic conductive adhesive agent, and light emitting device: A light-reflective anisotropic conductive adhesive and light-emitting device capable of maintaining luminous efficiency of a light-emitting element and preventing the occurrence of a crack to obtain conduction reliability are provided. The light-reflective anisotropic conductive adhesive contains a thermosetting resin composite, conductive particles, and a light-reflective acicular insulating particles. These light-reflective... Agent: Sony Chemical & Information Device Corporation

20130049052 - Lighting device: A light emitting device package may be provided that includes: a package body which includes a first cavity and a second cavity which are formed to be depressed in at least a portion of the package body; a first light emitting device and a second light emitting device, each of... Agent:

20130049050 - Nitride semiconductor light-emitting element, nitride semiconductor light-emitting device, and method of manufacturing nitride semiconductor light-emitting element: A nitride semiconductor light-emitting device includes a nitride semiconductor light-emitting element, a package substrate and an optically transparent resin sealing portion. The nitride semiconductor light-emitting element includes a substrate, a nitride semiconductor multilayer portion having a light-emitting layer and a protective layer. The nitride semiconductor multilayer portion is provided on... Agent: Sharp Kabushiki Kaisha

20130049040 - Phosphor incorporated in a thermal conductivity and phase transition heat transfer mechanism: A thermal conductivity and phase transition heat transfer mechanism has an opto-luminescent phosphor contained within the vapor chamber of the mechanism. The housing includes a section that is thermally conductive and a member that is at least partially optically transmissive, to allow emission of light produced by excitation of the... Agent: AblIPHolding LLC

20130049053 - Semiconductor light emitting device including metal reflecting layer: A semiconductor light emitting device includes a semiconductor structure, a transparent electrically-conducting layer, a dielectric film, and a metal reflecting layer. The semiconductor structure includes an active region. The transparent electrically-conducting layer is formed on the upper surface of the semiconductor structure. The dielectric film is formed on the upper... Agent: Nichia Corporation

20130049039 - Solid-state radiation transducer devices having flip-chip mounted solid-state radiation transducers and associated systems and methods: Solid-state radiation transducer (SSRT) devices and methods of manufacturing and using SSRT devices are disclosed herein. One embodiment of the SSRT device includes a radiation transducer (e.g., a light-emitting diode) and a transmissive support assembly including a transmissive support member, such as a transmissive support member including a converter material.... Agent: Micron Technology, Inc.

20130049041 - Thermal conductivity and phase transition heat transfer mechanism including optical element to be cooled by heat transfer of the mechanism: A thermal conductivity and phase transition heat transfer mechanism incorporates an active optical element. Examples of active optical elements include various phosphor materials for emitting light, various electrically driven light emitters and various devices that generate electrical current or an electrical signal in response to light. The thermal conductivity and... Agent: AblIPHolding LLC

20130049062 - Light-emitting device: To provide a highly reliable light-emitting device with less occurrence of cracks in a sealant bonding two facing substrates together. In a light-emitting device, a first substrate including a light-emitting unit, and a second substrate are bonded to each other with glass frit. A wiring in the area overlapping with... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130049061 - Light-emitting device and method of manufacturing the same: A light-emitting device includes an element mounting substrate, a light-emitting element on the element mounting substrate, a case formed around the light-emitting element and having an opening on a light extraction side of the light-emitting device, and a sealing material filled in the opening of the case to seal the... Agent: Toyoda Gosei Co., Ltd.

20130049060 - Light-emitting diode structure and method for manufacturing the same: A light-emitting diode structure. In one embodiment, the light-emitting diode structure includes an insulation substrate, a light-emitting structure having a first electrical semiconductor layer, a light-emitting layer, and a second electrical semiconductor layer successively stacked on the insulating substrate and containing a first electrode pad region, a second electrode pad... Agent: Chi Mei Lighting Technology Corp.

20130049059 - Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods: Solid state transducer devices having integrated electrostatic discharge protection and associated systems and methods are disclosed herein. In one embodiment, a solid state transducer device includes a solid state emitter, and an electrostatic discharge device carried by the solid state emitter. In some embodiments, the electrostatic discharge device and the... Agent: Micron Technology, Inc.

20130049063 - Semiconductor light-emitting element, protective film for semiconductor light-emitting element, and process for production of the protective film: Disclosed are: a semiconductor light-emitting element which fulfills all of high migration preventing properties, high permeability and low film production cost; a protective film for a semiconductor light-emitting element; and a process for producing the protective film. In a semiconductor light-emitting element comprising multiple semiconductor layers (12-14) formed on a... Agent: Mitsubishi Heavy Industries, Ltd.

20130049064 - Epitaxial film forming method, vacuum processing apparatus, semiconductor light emitting element manufacturing method, semiconductor light emitting element, and illuminating device: The present invention provides: an epitaxial film forming method capable of fabricating a +c-polarity epitaxial film made of a Group III nitride semiconductor by sputtering; and a vacuum processing apparatus suitable for this epitaxial film forming method. In one embodiment of the present invention, a Group III nitride semiconductor thin... Agent: Canon Anelva Corporation

20130049065 - Bi-directional switch with q1 and q4 control: A vertical bidirectional switch of the type having its control referenced to the rear surface, including on its rear surface a first main electrode and on its front surface a second main electrode and a gate electrode, this switch being controllable by a positive voltage between its gate and its... Agent: Stmicroelectronics (tours) Sas

20130049066 - Semiconductor device and method of making the same: A method for fabricating a semiconductor device includes the following steps. First, a semiconductor substrate is provided, and a first region, a second region and a third region are defined thereon. Then, a first well having a first conductive type is formed in the semiconductor substrate of the first region... Agent:

20130049067 - Semiconductor structure and manufacturing method for the same and esd circuit: A semiconductor structure and manufacturing method for the same, and an ESD circuit are provided. The semiconductor structure comprises a first doped region, a second doped region, a third doped region and a resistor. The first doped region has a first type conductivity. The second doped region has a second... Agent: Macronix International Co., Ltd.

20130049068 - Finfet device having a channel defined in a diamond-like shape semiconductor structure: The present disclosure provides a FinFET device. The FinFET device comprises a semiconductor substrate of a first semiconductor material; a fin structure of the first semiconductor material overlying the semiconductor substrate, wherein the fin structure has a top surface of a first crystal plane orientation; a diamond-like shape structure of... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130049069 - Semiconductor device and method for manufacturing the same: Semiconductor devices and methods for manufacturing the semiconductor devices are disclosed. A semiconductor device includes a substrate, a fin formed above the substrate with a semiconductor layer formed between the substrate and the fin, and a gate stack crossing over the fin. The fin and the semiconductor layer may include... Agent:

20130049070 - Structure of high electron mobility transistor growth on si substrate and the method thereof: A structure of high electron mobility transistor growth on Si substrate and the method thereof, in particular used for the semiconductor device manufacturing in the semiconductor industry. The UHVCVD system was used in the related invention to grow a Ge film on Si substrate then grow the high electron mobility... Agent:

20130049071 - Transistor with high electron mobility and inhomogeneous layer resistance of the guide channel: For an HEMT component, in particular on the basis of GaN, it is proposed, for the purpose of reducing field spikes in the conduction channel, in a partial section of the conduction channel between gate electrode and drain electrode, to set the sheet resistance of the conduction channel such that... Agent: United Monolithic Semiconductors Gmbh

20130049072 - Arrays of recessed access devices, methods of forming recessed access gate constructions, and methods of forming isolation gate constructions in the fabrication of recessed access devices: A method of forming an array of recessed access device gate constructions includes using the width of an anisotropically etched sidewall spacer in forming mask openings in an etch mask for forming all recessed access device trenches within semiconductor material within all of the array. The etch mask is used... Agent:

20130049073 - Semiconductor integrated circuit: A semiconductor integrated circuit includes: a main-interconnect to which supply voltage or reference voltage is applied; a plurality of sub-interconnects; a plurality of circuit cells configured to be connected to the plurality of sub-interconnects; a power supply switch cell configured to control, in accordance with an input control signal, connection... Agent: Sony Corporation

20130049074 - Methods for forming connections to a memory array and periphery: Methods are disclosed for forming connections to a memory array and a periphery of the array. The methods include forming stacks of conductive materials on the array and the periphery and forming a step between the periphery stack and the array stack. The step is removed during subsequent processing, and... Agent: Micron Technology, Inc.

20130049075 - Solid-state imaging device and method for manufacturing the same: A solid-state imaging device having a protective wiring inserted between adjacent pixel pairs so that the generation of electrical charges caused by a voltage variation in adjacent pixel pairs may be restrained, and a method for manufacturing the same. A solid-state imaging device with an additional protective wiring may be... Agent: Dongbu Hitek Co., Ltd.

20130049076 - Power device with integrated schottky diode and method for making the same: The present invention discloses a power device with integrated power transistor and Schottky diode and a method for making the same. The power device comprises a power transistor having a drain region, a Schottky diode in the drain region of the power transistor, and a trench-barrier near the Schottky diode.... Agent:

20130049077 - High performance power transistor having ultra-thin package: A field-effect transistor package includes a leadframe with a first linear thickness (150a) and a leadframe pad (151) of a reduced thickness; a first terminal of a field-effect transistor chip (140) attached to the pad and a second and a third terminal remote from the pad; a metal sheet (110)... Agent: Texas Instruments Incorporated

20130049080 - Semiconductor device and manufacturing method of semiconductor device: According to one embodiment, a semiconductor device includes a fin-type semiconductor, a gate electrode that is formed on a side surface of the fin-type semiconductor with a gate dielectric film therebetween in a state where both end portions of the fin-type semiconductor are exposed, source/drain formed in both end portions... Agent: Kabushiki Kaisha Toshiba

20130049078 - Semiconductor device and manufacturing method thereof: A semiconductor device and a manufacturing method thereof is provided. The method comprises: providing a substrate for the semiconductor device with a gate structure and a first dielectric interlayer being formed thereon, said gate structure comprising a metal gate and an upper surface of said first dielectric interlayer being substantially... Agent: Semiconductor Manufacturing International (beijing) Corporation

20130049079 - Small-outline package for a power transistor: According to an exemplary embodiment, a small-outline package includes a power transistor having a source and a drain, the power transistor situated on a paddle of a leadframe of the small-outline package. The source of the power transistor is electrically connected to a plurality of source leads. The drain of... Agent: International Rectifier Corporation

20130049081 - Solid-state image sensing device and electronic apparatus: Disclosed is a solid-state image sensing device including: a first photoelectric conversion element having a first semiconductor region of a first conductivity type formed inside a semiconductor substrate; a second photoelectric conversion element having a second semiconductor region of a first conductivity type formed at a deeper position of the... Agent: Sony Corporation

20130049083 - Solid-state imaging device and camera: A solid-state imaging device including is provided. The solid-state imaging device includes: pixels arrayed; a photoelectric conversion element in each of the pixels; a read transistor for reading electric charges photoelectrically-converted in the photoelectric conversion elements to a floating diffusion portion; a shallow trench element isolation region bordering the floating... Agent: Sony Corporation

20130049082 - Solid-state imaging device and electronic apparatus: A solid-state imaging device includes a plurality of photoelectric conversion units, a floating diffusion unit that is shared by the plurality of photoelectric conversion units and converts electric charge generated in each of the plurality of photoelectric conversion units into a voltage signal, a plurality of transfer units that are... Agent: Sony Corporation

20130049084 - Semiconductor device, manufacturing method thereof, solid-state imaging device, manufacturing method thereof, and electronic unit: A solid-state imaging device includes an element forming region formed on the surface of a substrate, element isolating parts that isolate pixels formed on the substrate, each of which is formed with a trench and a buried film, an opto-electric conversion element, and a buried-channel MOS transistor. The buried-channel MOS... Agent: Sony Corporation

20130049085 - Dynamic random access memory and method for fabricating the same: The present invention provides a dynamic random access memory (DRAM) including a plurality of transistors formed in a semiconductor substrate, wherein each of the transistors includes a vertical channel region. A plurality of bit line contained trenches is formed in the semiconductor substrate. Each of the bit line contained trenches... Agent:

20130049086 - Semiconductor device and method of manufacturing the same: The semiconductor device includes a semiconductor substrate having a cell region and a peripheral circuit region defined therein, semiconductor memory elements formed over the semiconductor substrate in the cell region, an interlayer insulating layer formed over the semiconductor substrate in the peripheral circuit region, first conductive layers substantially vertically passing... Agent: Sk Hynix Inc.

20130049087 - Semiconductor device and method of manufacturing the same: A semiconductor device includes a semiconductor substrate divided into a cell region and a peripheral circuit region defined in a first direction, wherein the peripheral circuit region is divided into a first region and a second region defined in a second direction substantially orthogonal to the first direction; gate lines... Agent:

20130049088 - Capacitor and method of forming same: A device comprises a substrate having at least one active region, an insulating layer above the substrate, and an electrode in a gate electrode layer above the insulating layer, forming a metal-oxide-semiconductor (MOS) capacitor. A first contact layer is provided on the electrode, having an elongated first pattern extending in... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20130049089 - Integrated circuits that include deep trench capacitors and methods for their fabrication: Methods are provided for fabricating an integrated circuit that includes a deep trench capacitor. One method includes fabricating a plurality of transistors on a semiconductor substrate, the plurality of transistors each including gate structures, source and drain regions, and silicide contacts to the source and drain regions. A trench is... Agent: Globalfoundries Inc.

20130049090 - Buried gate transistor: An embodiment of the invention provides a semiconductor fabrication method. The method comprises forming an isolation region between a first and a second region in a substrate, forming a recess in the substrate surface, and lining the recess with a uniform oxide. Embodiments further include doping a channel region under... Agent: Infineon Technologies Ag

20130049091 - Semiconductor device: A semiconductor device comprises an MIS field effect transistor including a channel region made of p-conductive silicon, a gate insulating film including a first insulating film having dielectric constant higher than dielectric constant of silicon dioxide, and a gate electrode. The gate electrode includes a first metal film formed on... Agent: Elpida Memory, Inc.

20130049092 - Semiconductor device: The present application discloses a semiconductor device comprising a source region and a drain region in an ultra-thin semiconductor layer; a channel region between the source region and the drain region in the ultra-thin semiconductor layer; a front gate stack above the channel region, the front gate comprising a front... Agent:

20130049093 - Methods and apparatuses including memory cells with air gaps and other low dielectric constant materials: Various embodiments include apparatuses and methods of forming the same. One such apparatus can include a first dielectric material and a second dielectric material, and a conductive material between the first dielectric material and the second dielectric material. A charge storage element, such as a floating gate or charge trap,... Agent:

20130049094 - Non-volatile memory device and method for fabricating the same: A method for fabricating a non-volatile memory device includes forming a gate layer over a substrate having a cell region and a peripheral circuit region, forming a gate pattern corresponding to a region for selection lines and a region between neighboring selection lines in the cell region, where during the... Agent:

20130049095 - Semiconductor device and method of manufacturing the same: A semiconductor device according to an embodiment of the present invention includes a vertical channel layer protruding upward from a semiconductor substrate, a tunnel insulating layer covering a sidewall of the vertical channel layer, a plurality of floating gates separated from each other and stacked one upon another along the... Agent: Sk Hynix Inc.

20130049096 - Methods and apparatuses including strings of memory cells formed along levels of semiconductor material: Various embodiments include methods and apparatuses including strings of memory cells formed along levels of semiconductor material. One such apparatus includes a stack comprised of a number of levels of single crystal silicon and a number of levels of dielectric material. Each of the levels of silicon is separated from... Agent:

20130049097 - Non-volatile memory device with vertical memory cells and method for fabricating the same: A non-volatile memory device includes a plurality of gate electrodes stacked over a semiconductor substrate and stretched in a first direction along the semiconductor substrate and a plurality of junction layers having a first region protruding from the semiconductor substrate and crossing the gate electrodes and a second region formed... Agent:

20130049098 - Nonvolatile semiconductor memory device and method of manufacturing the same: In one embodiment, a nonvolatile semiconductor memory device includes a substrate, and a plurality of cell transistors, each of which includes a first insulating layer, a charge storage layer, a second insulating layer, and a control electrode successively provided on the substrate, side surfaces of the charge storage layer including... Agent: Kabushiki Kaisha Toshiba

20130049099 - Semiconductor device: A semiconductor memory array includes a first nonvolatile memory cell having a first charge storage layer and a first gate electrode and a second nonvolatile memory cell, adjacent to the first memory cell in a first direction, having a second charge storage layer and a second gate electrode. The first... Agent: Antonelli, Terry, Stout & Kraus, LLP

20130049100 - Method of making a low-rdson vertical power mosfet device: The invention relates to a power semiconductor device and its preparation methods thereof. Particularly, the invention aims at providing a method for reducing substrate contribution to the Rdson (drain-source on resistance) of power MOSFETs, and a power MOSFET device made by the method. By forming one or more bottom grooves... Agent:

20130049101 - Semiconductor devices utilizing partially doped stressor film portions and methods for forming the same: A semiconductor structure and method for forming the same provide a high mobility stressor material suitable for use as source/drain regions or other active devices. The structure is formed in a substrate opening and is doped with an impurity such as boron in upper portions but is void of the... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20130049102 - Buried field ring field effect transistor (buf-fet) integrated with cells implanted with hole supply path: This invention discloses a semiconductor power device formed in a semiconductor substrate comprises a highly doped region near a top surface of the semiconductor substrate on top of a lightly doped region. The semiconductor power device further comprises a body region, a source region and a gate disposed near the... Agent: Alpha & Omega Semiconductor, Inc.

20130049104 - Method of forming a self-aligned contact opening in mosfet: A method of forming a contact opening in a semiconductor substrate is presented. A plurality of trench gates each having a projecting portion are formed in a semiconductor substrate, and a stop layer is deposited over the semiconductor substrate extending over the projecting portions, wherein each portion of the stop... Agent: Sinopower Semiconductor, Inc

20130049103 - Replacement gate compatible edram transistor with recessed channel: An eDRAM is fabricated including high performance logic transistor technology and ultra low leakage DRAM transistor technology. Embodiments include forming a recessed channel in a substrate, forming a first gate oxide to a first thickness lining the channel and a second gate oxide to a second thickness over a portion... Agent: Globalfoundries Inc.

20130049105 - Semiconductor device and method of manufacturing the same: A semiconductor device includes a semiconductor layer provided with a gate trench, a first conductivity type source region exposed on a surface side of the semiconductor layer, a second conductivity type channel region formed on a side of the source region closer to aback surface of the semiconductor layer to... Agent: Rohm Co., Ltd.

20130049106 - Bidirectional semiconductor device and method of fabricating the same: The present invention provides a bidirectional semiconductor device including a semiconductor substrate having a first conductive type, a first doped base region and a second doped base region having a second conductive type, and a gate insulating layer. The semiconductor substrate has a first trench, and the first doped base... Agent:

20130049107 - Trench semiconductor power device and fabrication method thereof: A trench semiconductor power device and a fabrication method. The fabrication method includes: eroding an n epitaxial layer on an n+ substrate to form multiple gate trenches, and implanting with dopants to form source regions and P type base regions, respectively; eroding an interlayer dielectric to form a trench plug;... Agent: M-mos Semiconductor Hk Ltd

20130049108 - Quasi-vertical power mosfet and methods of forming the same: A MOSFET includes a semiconductor substrate having a top surface, a body region of a first conductivity type in the semiconductor substrate, and a double diffused drain (DDD) region having a top surface lower than a bottom surface of the body region. The DDD region is of a second conductivity... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130049109 - Metal gate structure: A metal gate structure comprises a metal layer partially filling a trench of the metal gate structure. The metal layer comprises a first metal sidewall, a second metal sidewall and a metal bottom layer. By employing an uneven protection layer during an etching back process, the thickness of the first... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130049110 - Vertical transistor devices, memory arrays, and methods of forming vertical transistor devices: A vertical transistor device includes a line of active area adjacent a line of dielectric isolation. A buried data/sense line obliquely angles relative to the line of active area and the line of dielectric isolation. A pair of gate lines is outward of the buried data/sense line and obliquely angle... Agent:

20130049111 - Dielectric isolation substrate and semiconductor device: According to one embodiment, in a dielectric isolation substrate, an insulating film having a first thickness is provided on a semiconductor substrate. A semiconductor layer of a first conductivity type having a second thickness is provided on the insulating film. An impurity diffusion layer of a second conductivity type is... Agent: Kabushiki Kaisha Toshiba

20130049112 - Electrostatic discharge protection device and applications thereof: An electrostatic discharge protection device comprises a substrate with a first conductivity, a gate, a drain structure and a source structure. The gate is disposed on a surface of the substrate. The drain structure with a second conductivity type comprises a first doping region with a first doping concentration disposed... Agent: United Microelectronics Corp.

20130049113 - U-shape resurf mosfet devices and associated methods of manufacturing: The present technology discloses a U-shape RESURF MOSFET device. Wherein the MOSFET device comprises a drain having a drain contact region and a drift region, a source, a body, a gate and a recessed-FOX structure. Wherein the recessed-FOX structure is between the gate and the drift region vertically and between... Agent:

20130049114 - High voltage metal-oxide-semiconductor transistor device and method of fabricating the same: The present invention provides a high voltage metal-oxide-semiconductor transistor device including a substrate, a deep well, and a doped region. The substrate and the doped region have a first conductive type, and the substrate has at least one electric field concentration region. The deep well has a second conductive type... Agent:

20130049115 - Mosfet including asymmetric source and drain regions: At least one drain-side surfaces of a field effect transistor (FET) structure, which can be a structure for a planar FET or a fin FET, is structurally damaged by an angled ion implantation of inert or electrically active dopants, while at least one source-side surface of the transistor is protected... Agent: International Business Machines Corporation

20130049116 - Semiconductor device and method for manufacturing the same: The present disclosure provides a semiconductor device and a method for manufacturing the same. The semiconductor device comprises: an SOI wafer comprising a semiconductor substrate, an insulating buried layer, and a semiconductor layer, wherein the insulating buried layer is disposed on the semiconductor substrate, and the semiconductor layer is disposed... Agent:

20130049117 - Semiconductor device and method for manufacturing the same: The present disclosure provides a semiconductor device and a method for manufacturing the same. The semiconductor device comprises: an SOI wafer comprising a semiconductor substrate, a buried insulation layer, and a semiconductor layer, wherein the buried insulation layer is disposed on the semiconductor substrate, and the semiconductor layer is disposed... Agent:

20130049118 - Thin-film transistor and method of manufacturing the same, and electronic unit: There are provided a thin-film transistor that leads to the improved performance and production stability, and a method of manufacturing the thin-film transistor, and an electronic unit using the thin-film transistor. The thin-film transistor includes: an organic semiconductor section including first and second surfaces; a source electrode section adjacent to... Agent: Sony Corporation

20130049119 - Multi-working voltages cmos device with single gate oxide layer thickness and manufacturing method thereof: The present invention provides a multi-working voltages CMOS device with single gate oxide layer thickness, gate work functions of CMOS transistors are regulated by implanting ions with different work functions into metal oxide dielectric material layers of the CMOS transistors, thus to realize different flat-band voltages under the condition of... Agent: Shanghai Huali Microelectronics Corporation

20130049120 - Semiconductor device structures including vertical transistor devices, arrays of vertical transistor devices, and methods of fabrication: A semiconductor device structure is disclosed. The semiconductor device structure includes a mesa extending above a substrate. The mesa has a channel region between a first side and second side of the mesa. A first gate is on a first side of the mesa, the first gate comprising a first... Agent: Micron Technology, Inc.

20130049121 - Threshold voltage adjustment in a fin transistor by corner implantation: When forming sophisticated multiple gate transistors and planar transistors in a common manufacturing sequence, the threshold voltage characteristics of the multiple gate transistors may be intentionally “degraded” by selectively incorporating a dopant species into corner areas of the semiconductor fins, thereby obtaining a superior adaptation of the threshold voltage characteristics... Agent: Globalfoundries Inc.

20130049122 - Semiconductor device and method of manufacturing the same: In one embodiment, a semiconductor device includes a substrate, and a gate insulator disposed on the substrate. The device further includes a gate electrode including a first electrode layer which is disposed on an upper surface of the gate insulator and has a first work function, and a second electrode... Agent: Kabushiki Kaisha Toshiba

20130049124 - Mosfet integrated circuit with improved silicide thickness uniformity and methods for its manufacture: An MOSFET device having a Silicide layer of uniform thickness and which is substantially free of “Spotty” NiSi-type holes, and methods for its fabrication, are provided. One such method involves simultaneously depositing a metal layer (e.g. Ni) over the active and open areas of a semiconductor substrate. The depth to... Agent: Globalfoundries Inc.

20130049125 - Semiconductor device structure and method for manufacturing the same: A semiconductor device structure and a method for manufacturing the same are disclosed. In one embodiment, the method comprises: forming a fin in a first direction on a semiconductor substrate; forming a gate line in a second direction crossing the first direction on the semiconductor substrate, the gate line intersecting... Agent: Institute Of Microelectronics, Chinese Academy Of Sciences

20130049123 - Semiconductor device with dram word lines and gate electrodes in non-memory regions of the device comprised of a metal, and methods of making same: Generally, the present disclosure is directed to a semiconductor device with DRAM word lines and gate electrodes in a non-memory region of the device made of at least one layer of metal, and various methods of making such devices. One illustrative method disclosed herein involves forming a sacrificial gate electrode... Agent: Globalfoundries Inc.

20130049127 - Controlling the device performance by forming a stressed backside dielectric layer: A device includes a p-type metal-oxide-semiconductor (PMOS) device and an n-type metal-oxide-semiconductor (NMOS) device at a front surface of a semiconductor substrate. A first dielectric layer is disposed on a backside of the semiconductor substrate. The first dielectric layer applies a first stress of a first stress type to the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130049126 - Methods of forming a semiconductor device with recessed source/drain regions, and a semiconductor device comprising same: In one example, a method disclosed herein includes forming a gate electrode structure for a PMOS transistor and a gate electrode structure for a NMOS transistor, forming a plurality of cavities in the substrate proximate the gate electrode structure of the PMOS transistor and performing an epitaxial deposition process to... Agent: Globalfoundries Inc.

20130049130 - On-chip radiation dosimeter: A semiconductor device includes a first field effect transistor (FET) located on a substrate; and a second FET located on the substrate, the second FET comprising a first buried oxide (BOX) region located underneath a channel region of the second FET, wherein the first BOX region of the second FET... Agent: International Business Machines Corporation

20130049129 - Semiconductor device and manufacturing method thereof: The present invention relates to a semiconductor device having a P-channel semiconductor region and a manufacturing method therefor. The method comprises: forming a gate dielectric layer on a substrate; forming a gate material layer on the gate dielectric layer; blanket pre-doping the gate material layer to introduce an N-type dopant... Agent: Semiconductor Manufacturing International (beijing) Corporation

20130049128 - Semiconductor device with dual metal silicide regions and methods of making same: Disclosed herein are various semiconductor devices with dual metal silicide regions and to various methods of making such devices. In one example, the device includes a gate electrode and a plurality of source/drain regions formed in a substrate proximate the gate electrode structure. The device further includes a first metal... Agent: Globalfoundries Inc.

20130049131 - Semiconductor integrated circuit device: Prior known static random access memory (SRAM) cells required that a diffusion layer be bent into a key-like shape in order to make electrical contact with a substrate with a P-type well region formed therein, which would result in a decrease in asymmetry leading to difficulty in micro-patterning. To avoid... Agent:

20130049132 - Parasitic capacitance reduction in mosfet by airgap ild: The instant disclosure relates to MOSFET semiconductor structures exhibiting a reduced parasitic capacitance, as well as methods of making the MOSFET semiconductor structures. The MOSFET semiconductor structures of the instant disclosure comprise an air-gap interlayer dielectric material between the contacts to the source/drain and gate structures and gate stack structures.... Agent: International Business Machines Corporation

20130049133 - Semiconductor device: A semiconductor device that includes transistors having the same polarity consumes less power and can prevent a decrease in amplitude of a potential output. The semiconductor device includes a first wiring having a first potential, a second wiring having a second potential, a third wiring having a third potential, a... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130049135 - Semiconductor device: A semiconductor device includes a first MIS transistor and a second MIS transistor. The first MIS transistor includes first offset sidewalls formed on side surfaces in a gate width direction of a first gate electrode, second offset sidewalls formed on side surfaces in a gate length direction and the side... Agent: Panasonic Corporation

20130049134 - Semiconductor device and method of making same: In a semiconductor device and a method of making the same, a first transistor has a gate stack comprising an underlying layer formed of a first material and an overlying layer formed of a second material. A second transistor has a gate stack comprising an underlying layer formed of a... Agent: Renesas Electronics Corporation

20130049136 - Combined planar fet and fin-fet devices and methods: Electronic devices (20, 20′) of superior design flexibility that avoid channel-width quantization effects common with prior art fin-type (FIN) field effect transistors (FIN-FETS) (22) are obtained by providing multiple FIN-FETs (22) and at least one planar FET (32, 32′) on a common substrate (21), wherein the multiple FIN-FETs (22) have... Agent:

20130049137 - Semiconductor device: A semiconductor device is improved in reliability. A power MOSFET for switching, and a sense MOSFET for sensing a current flowing in the power MOSFET, which is smaller in area than the power MOSFET, are formed in one semiconductor chip. The semiconductor chip is mounted over a chip mounting portion,... Agent: Renesas Electronics Corporation

20130049138 - Semiconductor device and method for manufacturing the same: The present disclosure provides a semiconductor device and a method for manufacturing the same. The semiconductor device comprises: a semiconductor layer; a first fin being formed by patterning the semiconductor layer; and a second fin being formed by patterning the semiconductor layer, wherein: top sides of the first and second... Agent:

20130049139 - Semiconductor device with work function adjusting layer having varied thickness in a gate width direction and methods of making same: Disclosed herein is a semiconductor device that includes a semiconducting substrate and a work-function adjusting layer positioned at least partially in the semiconducting substrate, the work-function adjusting layer having a middle section, opposing ends and an end region located proximate each of said opposing ends and a gate electrode positioned... Agent: Globalfoundries Inc.

20130049140 - Variation resistant metal-oxide-semiconductor field effect transistor (mosfet): Variation resistant metal-oxide-semiconductor field effect transistors (MOSFETs) are manufactured using a high-K, metal-gate ‘channel-last’ process. A cavity is formed between spacers formed over a well area having separate drain and source areas, and then a recess into the well area is formed. The active region is formed in the recess,... Agent: Gold Standard Simulations Ltd.

20130049141 - Metal gate structure and fabrication method thereof: A metal gate structure located on a substrate includes a gate dielectric layer, a metal layer and a titanium aluminum nitride metal layer. The gate dielectric layer is located on the substrate. The metal layer is located on the gate dielectric layer. The titanium aluminum nitride metal layer is located... Agent:

20130049142 - Transistor with reduced parasitic capacitance: Scaled transistors with reduced parasitic capacitance are formed by replacing a high-k dielectric sidewall spacer with a SiO2 or low-k dielectric sidewall spacer. Embodiments include transistors comprising a trench silicide layer spaced apart from a replacement metal gate electrode, and a layer of SiO2 or low-k material on a side... Agent: Globalfoundries Singapore Pte. Ltd.

20130049143 - Release activated thin film getter: This disclosure provides apparatuses, systems and methods for manufacturing electromechanical systems (EMS) devices having a means for removing and/or mitigating unwanted environmental stresses from within the device. In some implementations, an integrated getter layer that is exposed to an internal cavity of the electromechanical systems device can be configured to... Agent: Qualcomm Mems Technologies, Inc.

20130049144 - Magnetoresistive random access memory (mram) device and fabrication methods thereof: A method includes patterning a plurality of magnetic tunnel junction (MTJ) layers to form an MTJ cell, and forming a dielectric cap layer over a top surface and on a sidewall of the MTJ cell. The step of patterning and the step of forming the dielectric cap layer are in-situ... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130049146 - Detector element, radiation detector and medical device containing the detector elements, and method for producing a detector element: A detector element is disclosed with a semi-conductive converter element and metal contacts arranged thereon for at least one anode and at least one cathode, wherein at least one of the metal contacts comprises a contact layer made from a contact material based on precious metal and ruthenium as its... Agent: Siemens Aktiengesellschaft

20130049145 - Radiation detector and a method for producing a metalcarbon junction for a radiation detector: A radiation detector comprising a metal-carbon junction wherein a layer of carbon (11) is deposited on a layer of metal (12) having a work function higher than the work function of carbon (11), the junction having electrical characteristic of a diode.... Agent: Instytut Fizyki Jadrowej Im. Henryka Niewodniczanskiego Pan

20130049147 - Wafer structure for electronic integrated circuit manufacturing: A bonded wafer structure having a handle wafer, a device wafer, and an interface region with an abrupt transition between the conductivity profile of the device wafer and the handle wafer is used for making semiconductor devices. The improved doping profile of the bonded wafer structure is well suited for... Agent: Aeroflex Colorado Springs Inc.

20130049148 - Conductive paste composition and semiconductor devices made therewith: A conductive paste composition contains a source of an electrically conductive metal, a lead-tellurium-based oxide, and an organic vehicle. An article such as a high-efficiency photovoltaic cell is formed by a process of deposition of the lead-free paste composition on a semiconductor substrate (e.g., by screen printing) and firing the... Agent: E I Du Pont De Nemours And Company

20130049150 - Formation of metal nanospheres and microspheres: Hemispheres and spheres are formed and employed for a plurality of applications. Hemispheres are employed to form a substrate having an upper surface and a lower surface. The upper surface includes peaks of pillars which have a base attached to the lower surface. The peaks have a density defined at... Agent: International Business Machines Corporation

20130049149 - Method of forming pattern, actinic-ray- or radiation-sensitive resin composition and actinic-ray- or radiation-sensitive film: Provided is a method of forming a pattern, including forming an actinic-ray- or radiation-sensitive resin composition into a film, the actinic-ray- or radiation-sensitive resin composition including a resin (A) including a repeating unit containing a group that when acted on by an acid, is decomposed to thereby produce a polar... Agent: Fujifilm Corporation

20130049151 - Anode-illuminated radiation detector: Interconnect structures suitable for use in connecting anode-illuminated detector modules to downstream circuitry are disclosed. In certain embodiments, the interconnect structures are based on or include low atomic number or polymeric features and/or are formed at a density or thickness so as to minimize or reduce radiation attenuation by the... Agent: General Electric Company

20130049153 - Light pipe etch control for cmos fabrication: In accordance with at least some embodiments of the present disclosure, a process for fabricating a light pipe (LP) is described. The process may be configured to construct a semiconductor structure having an etch-stop layer above a photodiode region and a first dielectric layer above the etch-stop layer. The process... Agent: Himax Imaging, Inc.

20130049152 - Photoelectric conversion device: According to example embodiments, a photoelectric conversion device includes a first electrode including a light-receiving surface, a second electrode spaced apart from the first electrode and facing the first electrode, and an auxiliary layer between the second electrode and an exciton producing layer. The first electrode may be on the... Agent: Samsung Electronics Co., Ltd.

20130049154 - Device and method for individual finger isolation in an optoelectronic device: An optoelectronic device including at least one of a solar device, a semiconductor device, and an electronic device. The device includes a semiconductor unit. A plurality of metal fingers is disposed on a surface of the semiconductor unit for electrical conduction. Each of the metal fingers includes a pad area... Agent:

20130049155 - Photosite with pinned photodiode: A photosite is formed in a semiconductor substrate and includes a photodiode confined in a direction orthogonal to the surface of the substrate. The photodiode includes a semiconductor zone for storing charge that is formed in an upper semiconductor region having a first conductivity type and includes a main well... Agent: Stmicroelectronics S.a.

20130049156 - Solid-state imaging apparatus: In a region of a weak internal electric field, photocharges generated in a region deeper than the photodiode are diffused laterally to lower the sensitivity by photoelectrons flowing into adjacent pixels, etc (crosstalk). An anti-crosstalk layer is disposed in the photodiode forming portion, and between a pixel region and a... Agent: Hitachi, Ltd.

20130049157 - Solid-state imaging device and manufacturing method thereof: According to one embodiment, a solid-state imaging device includes a semiconductor substrate of a first conductive type having a diffusion layer region provided on a surface thereof, a diffusion layer of the first conductive type for a pixel separation whose bottom portion is formed at the deepest position of the... Agent:

20130049158 - Formation of metal nanospheres and microspheres: Hemispheres and spheres are formed and employed for a plurality of applications. Hemispheres are employed to form a substrate having an upper surface and a lower surface. The upper surface includes peaks of pillars which have a base attached to the lower surface. The peaks have a density defined at... Agent: International Business Machines Corporation

20130049159 - Semiconductor device with an amorphous semi-insulating layer, temperature sensor, and method of manufacturing a semiconductor device: According to an embodiment, a semiconductor device includes a semiconductor substrate and an amorphous semi-insulating layer on the semiconductor substrate.... Agent: Infineon Technologies Ag

20130049160 - Constant current semiconductor device having a schottky barrier: This invention reveals a constant current semiconductor device of an N-type or a P-type epitaxial layer on a semi-insulating substrate, the device is treated by using a Schottky barrier to cut off current in conduction channels under certain bias and to provide constant current within cut-off voltage and breakdown voltage... Agent: Formosa Microsemi Co., Ltd.

20130049163 - Insulation wall between transistors on soi: An insulation wall separating transistors formed in a thin semiconductor layer resting on an insulating layer laid on a semiconductor substrate, this wall being formed of an insulating material and comprising a wall crossing the thin layer and the insulating layer and penetrating into the substrate, and lateral extensions extending... Agent:

20130049161 - Nitride shallow trench isolation (sti) structures and methods for forming the same: A shallow trench isolation (STI) structure and methods for forming the same provide an STI structure with a top surface formed completely of silicon nitride. The methods for forming the STI structures provide for at least one nitride deposition step followed by a further nitride deposition step to re-fill divots... Agent: Wafertech, LLC

20130049162 - Semiconductor device and manufacturing method thereof: A semiconductor device and a manufacturing method therefor is based on the fact that a thinner liner oxide layer on the bottom of the trenches can lead to a higher subsequent deposition rate. After forming trenches and a liner oxide layer and before depositing a filling oxide layer in the... Agent: Semiconductor Manufacturing International (beijing) Corporation

20130049164 - Methods of forming an anode and a cathode of a substrate diode by performing angled ion implantation processes: Disclosed herein are various methods of forming an anode and a cathode of a substrate diode by performing angled ion implantation processes. In one example, the method includes performing a first angled ion implantation process to form a first doped region in a bulk layer of an SOI substrate for... Agent: Globalfoundries Inc.

20130049165 - Fuse: A fuse includes a first conductor, an insulating film on the first conductor, a second conductor on the insulating film, a first plug coupled to the first conductor, a second plug and a third plug each coupled to the second conductor, and a cover film formed on the second conductor... Agent: Fujitsu Semiconductor Limited

20130049166 - Semiconductor integrated circuit: A semiconductor integrated circuit which can perform reliable relief processing using an electric fuse. The semiconductor integrated circuit includes a fuse wiring, a first electrode pad, a second electrode pad, a pollution-control layer, and a first via hole wiring and a second via hole wiring. The fuse wiring is cut... Agent:

20130049167 - Semiconductor device and method of fabricating the same: Provided is a semiconductor device including a metal dummy pattern and a thin film resistor. In detail, a semiconductor device includes a semiconductor substrate, a thin film resistor, and a metal dummy pattern. The thin film resistor disposed over the semiconductor substrate and extending in a first direction relative to... Agent:

20130049168 - Resistor and manufacturing method thereof: A method for forming a resistor integrated with a transistor having metal gate includes providing a substrate having a transistor region and a resistor region defined thereon, forming a transistor having a polysilicon dummy gate in the transistor region and a polysilicon main portion with two doped regions positioned at... Agent:

20130049169 - Bipolar junction transistor and method of manufacturing the same: A bipolar junction transistor includes a first trench element isolation film, a second trench element isolation film, a first base region, a second base region, a collector region, a first well, a second well, an emitter, a collector, and bases. The second well is formed by implanting an n-type impurity... Agent:

20130049171 - Method for producing semiconductor components on a substrate, and substrate comprising semiconductor components: A method for producing semiconductor components on a substrate including photolithographic patterning steps, in which method, on the substrate, a first layer to be patterned is applied and a second layer serving as a mask layer for the first layer to be patterned is applied, wherein a third layer serving... Agent: Espros Photonics Ag

20130049170 - Transistor including single layer reentrant profile: A transistor includes a substrate. An electrically conductive material layer, having a thickness, is positioned on the substrate. The electrically conductive material layer contains a reentrant profile such that one portion of the electrically conductive material overhangs another portion of the electrically conductive material. An electrically insulating material layer, having... Agent:

20130049172 - Insulating region for a semiconductor substrate: An insulating region for a semiconductor wafer and a method of forming same. The insulating region can include a tri-layer structure of silicon oxide, boron nitride and silicon oxide. The insulating region may be used to insulate a semiconductor device layer from an underlying bulk semiconductor substrate. The insulating region... Agent: Stmicroelectronics, Inc.

20130049176 - Method for producing a semiconductor: A method for producing a semiconductor includes providing a p-doped semiconductor body having a first side and a second side; implanting protons into the semiconductor body via the first side to a target depth of the semiconductor body; bonding the first side of the semiconductor body to a carrier substrate;... Agent: Infineon Technologies Austria Ag

20130049173 - Wafer structure for electronic integrated circuit manufacturing: A bonded wafer structure having a handle wafer, a device wafer, and an interface region with an abrupt transition between the conductivity profile of the device wafer and the handle wafer is used for making semiconductor devices. The improved doping profile of the bonded wafer structure is well suited for... Agent: Aeroflex Colorado Springs Inc.

20130049174 - Wafer structure for electronic integrated circuit manufacturing: A bonded wafer structure having a handle wafer, a device wafer, and an interface region with an abrupt transition between the conductivity profile of the device wafer and the handle wafer is used for making semiconductor devices. The improved doping profile of the bonded wafer structure is well suited for... Agent: Aeroflex Colorado Springs Inc.

20130049175 - Wafer structure for electronic integrated circuit manufacturing: A bonded wafer structure having a handle wafer, a device wafer, and an interface region with an abrupt transition between the conductivity profile of the device wafer and the handle wafer is used for making semiconductor devices. The improved doping profile of the bonded wafer structure is well suited for... Agent: Aeroflex Colorado Springs Inc.

20130049177 - Wafer structure for electronic integrated circuit manufacturing: A bonded wafer structure having a handle wafer, a device wafer, and an interface region with an abrupt transition between the conductivity profile of the device wafer and the handle wafer is used for making semiconductor devices. The improved doping profile of the bonded wafer structure is well suited for... Agent: Aeroflex Colorado Springs Inc.

20130049178 - Wafer structure for electronic integrated circuit manufacturing: A bonded wafer structure having a handle wafer, a device wafer, and an interface region with an abrupt transition between the conductivity profile of the device wafer and the handle wafer is used for making semiconductor devices. The improved doping profile of the bonded wafer structure is well suited for... Agent: Aeroflex Colorado Springs Inc.

20130049179 - Low cost hybrid high density package: A microelectronic assembly includes a substrate, a first and second microelectronic elements, a lead finger, electrical connections extending between contacts of the second microelectronic element and the lead fingers, and an encapsulant overlying at least portions of the first and second microelectronic elements, lead finger and electrical connections. The substrate... Agent: Tessera, Inc.

20130049180 - Qfn device and lead frame therefor: A lead frame for a quad flat no-lead (QFN) type semiconductor device package includes a die pad, a plurality of leads that surround the die pad. The outer edge of leads includes a channel that extends from a lower surface to an upper surface of the leads. A semiconductor die... Agent: Freescale Semiconductor, Inc

20130049181 - Lead frame having a flag with in-plane and out-of-plane mold locking features: A semiconductor device lead frame having enhanced mold locking features is provided. The lead frame has a flag with bendable edge features along the edge of the flag. Each edge feature is shaped to resist movement against encapsulating mold material in a plane of the edge feature. By bending a... Agent:

20130049183 - Power device and method of packaging same: A method of packaging a power semiconductor die includes providing a first lead frame of a dual gauge lead frame. The first lead frame includes a thick die pad. A tape is attached to a first side of the thick die pad and the power die is attached to a... Agent: Freescale Semiconductor, Inc.

20130049182 - Semiconductor device packaging having pre-encapsulation through via formation using lead frames with attached signal conduits: A semiconductor device package having pre-formed and placed through vias and a process for making such a package is provided. One or more signal conduits are coupled to a lead frame that is subsequently embedded in an encapsulated semiconductor device package. The free end of signal conduits is exposed while... Agent:

20130049184 - Electric device and production method therefor: An electronic device includes a support substrate 12, an electric circuit 14 provided in a sealing region set on the support substrate 12, a sealing member 16 provided on the support substrate 12 to surround the sealing region, a sealing substrate 17 bonded to the support substrate 12 with the... Agent: Sumitomo Chemical Company, Limited

20130049185 - Semiconductor package and fabrication method thereof: A semiconductor package is provided for carrying a sleeve member and a fan wheel axially coupled to the sleeve member so as to provide a heat dissipating function. The semiconductor package includes: a substrate; a coil module and at least an electronic component disposed on the substrate; and an encapsulant... Agent: Amtek Semiconductors Co., Ltd.

20130049186 - Semiconductor device and method of manufacture thereof: A semiconductor device includes a semiconductor module having a heat conductive portion formed of metal and also having a molded resin having a surface at which the heat conductive portion is exposed, a cooling body secured to the semiconductor module by means of bonding material, and heat conductive material formed... Agent: Mitsubishi Electric Corporation

20130049187 - Resin-diamagnetic material composite structure, method for producing the same, and semiconductor device using the same: A composite structure 10 of a resin-diamagnetic material, including a diamagnetic material layer 12 and a resin layer 14 is obtained by a method including disposing particles of a diamagnetic material 22 and a resin 24 in a mold 30, applying a magnetic field to the diamagnetic material 22 disposed... Agent:

20130049188 - Semiconductor device and method of forming tim within recesses of muf material: A semiconductor device has a semiconductor die mounted to a substrate. The semiconductor die and substrate are disposed within a mold chase with a releasing layer disposed over the semiconductor die. A MUF material is deposited around the semiconductor die, releasing layer, and substrate through an opening in the mold... Agent: Stats Chippac, Ltd.

20130049193 - Formation of through-silicon via (tsv) in silicon substrate: To form a through-silicon via (TSV) in a silicon substrate without using plating equipment or using sputtering equipment or small metal particles, and form an interlayer connection by stacking a plurality of such silicon substrates, a through hole of a silicon substrate is filled using molten solder itself. In detail,... Agent: International Business Machines Corporation

20130049190 - Methods of fabricating semiconductor chip solder structures: Various semiconductor chip solder bump and underbump metallization (UBM) structures and methods of making the same are disclosed. In one aspect, a method is provided that includes depositing a layer of a first metallic material on a semiconductor chip. The first layer has a first physical quantity. A layer of... Agent:

20130049194 - Self-aligned protection layer for copper post structure: A semiconductor device including a semiconductor substrate and a conductive post overlying and electrically connected to the substrate. The semiconductor device further includes a manganese-containing protection layer on a surface of the conductive post. A method of forming a semiconductor device. The method includes forming a bond pad region on... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130049191 - Semiconductor device and method of manufacturing the same: A semiconductor device has a wiring substrate, a first semiconductor chip, a second semiconductor chip, and a sealing member. The second semiconductor chip has a chip-layered structure with a plurality of semiconductor chip components stacked in the height direction of the semiconductor device. The first semiconductor chip has an upper... Agent: Elpida Memory, Inc.

20130049189 - Semiconductor flip-chip system having three-dimensional solder joints: A solder joint between a trace (401) and an object (501). The trace having a solderable surface (503), a height (504), and a width (404), the trace including a bulge having a diameter (502) greater than the trace width, a surface area, and sidewalls, the sum of the bulge sidewall... Agent: Texas Instruments Incorporated

20130049192 - Stacked chip package and fabrication method thereof: A semiconductor package for a stacked chip includes a first semiconductor chip, comprising a metal layer; a through-silicon-via, penetrating a top surface of the first semiconductor chip and electrically connected to the metal layer; a redistribution layer, formed on the top surface of the first semiconductor chip, and electrically connected... Agent:

20130049197 - Semiconductor package structure and manufacturing method thereof: A manufacturing method of semiconductor package structure includes: providing a first dielectric layer having multiple through holes; providing a second dielectric layer having multiple conductive vias and a chip-containing opening; laminating the second dielectric layer onto the first dielectric layer; disposing a chip in the chip-containing opening and adhering a... Agent: Chipmos Technologies Inc.

20130049198 - Semiconductor package structure and manufacturing method thereof: A method of manufacturing a semiconductor package structure is provided. A chip is provided. An active surface of the chip is disposed on a carrier. A molding compound is formed on the carrier with a metal layer disposed thereon. The metal layer has an upper and lower surface, multiple cavities... Agent: Chipmos Technologies Inc.

20130049195 - Three-dimensional integrated circuit (3dic) formation process: A method includes performing a laser grooving to remove a dielectric material in a wafer to form a trench, wherein the trench extends from a top surface of the wafer to stop at an intermediate level between the top surface and a bottom surface of the wafer. The trench is... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130049196 - Through interposer wire bond using low cte interposer with coarse slot apertures: A microelectronic package includes a subassembly, a second substrate, and a monolithic encapsulant. The subassembly includes a first substrate that has at least one aperture, a coefficient of thermal expansion (CTE) of eight parts per million per degree Celsius or less, and first and second contacts arranged so as to... Agent: Tessera, Inc.

20130049199 - Silicidation of device contacts using pre-amorphization implant of semiconductor substrate: Silicidation techniques with improved rare earth silicide morphology for fabrication of semiconductor device contacts. For example, a method for forming silicide includes implanting a silicon layer with an amorphizing species to form an amorphous silicon region in the silicon layer and depositing a rare earth metal film on the silicon... Agent: International Business Machines Corporation

20130049200 - Silicidation of device contacts using pre-amorphization implant of semiconductor substrate: Silicidation techniques with improved rare earth silicide morphology for fabrication of semiconductor device contacts. For example, a method for forming silicide includes implanting a silicon layer with an amorphizing species to fond an amorphous silicon region in the silicon layer and depositing a rare earth metal film on the silicon... Agent: International Business Machines Corporation

20130049201 - Power module and manufacturing method thereof: A power module includes a substrate having a surface on which a plurality of wiring patterns are formed, a semiconductor device mounted on the substrate and electrically connected to a part of the plurality of wiring patterns, and a terminal portion with a lead electrically connected to the other part... Agent: Hitachi, Ltd.

20130049202 - Laminated and sintered ceramic circuit board, and semiconductor package including the circuit board: In the laminated and sintered ceramic circuit board according to the present invention, at least a portion of the inplane conductor is fine-lined, such that the shape of the cross-section surface of the fine-lined inplane conductor is trapezoid, and the height (a), the length (c) of the lower base and... Agent: Ngk Insulators, Ltd.

20130049203 - Semiconductor device with buried electrode: A semiconductor device with a buried electrode is manufactured by forming a cavity within a semiconductor substrate, forming an active device region in an epitaxial layer disposed on the semiconductor substrate and forming the buried electrode below the active device region in the cavity. The buried electrode is formed from... Agent: Infineon Technologies Austria Ag

20130049204 - Semiconductor device including diffusion soldered layer on sintered silver layer: A semiconductor device includes a substrate and a first sintered silver layer on the substrate. The semiconductor device includes a first semiconductor chip and a first diffusion soldered layer coupling the first semiconductor chip to the first sintered silver layer.... Agent: Infineon Technologies Ag

20130049206 - Bond pad configurations for controlling semiconductor chip package interactions: Generally, the subject matter disclosed herein relates to sophisticated semiconductor chips that may be less susceptible to the occurrence of white bumps during semiconductor chip packaging operations, such as flip-chip or 3D-chip assembly, and the like. One illustrative semiconductor chip disclosed herein includes at least one integrated circuit device and... Agent: Globalfoundries Inc.

20130049208 - Integrated circuit packaging system with redistribution layer and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: forming a peripheral interconnect having a bond finger and a contact pad with a trace in direct contact with the bond finger and the contact pad, the bond finger vertically offset from the contact pad; connecting an integrated circuit... Agent:

20130049207 - Multiple step anneal method and semiconductor formed by multiple step anneal: A method of annealing a semiconductor and a semiconductor. The method of annealing including heating the semiconductor to a first temperature for a first period of time sufficient to remove physically-adsorbed water from the semiconductor and heating the semiconductor to a second temperature, the second temperature being greater than the... Agent: International Business Machines Corporation

20130049212 - Semiconductor device: Technology is provided in which, when forming a trench of a narrow width in a thick semiconductor layer, a trench can be formed without the occurrence of semiconductor residue. In this Specification, a semiconductor device in which a trench is formed in a semiconductor layer is disclosed. In the semiconductor... Agent: Kabushiki Kaisha Toyota Chuo Kenkyusho

20130049205 - Semiconductor device and method of manufacturing a semiconductor device including grinding steps: A method of manufacturing a device includes providing a semiconductor chip having a first face and a second face opposite to the first face with a contact pad arranged on the first face. The semiconductor chip is placed on a carrier with the first face facing the carrier. The semiconductor... Agent: Intel Mobile Communications Gmbh

20130049211 - Semiconductor device and method of manufacturing the same: A semiconductor device having a conductive pattern includes a plurality of conductive lines extending in parallel, each having a first region extending in a first direction and a second region coupled to the first region and extending in a second direction crossing the first direction, and a plurality of contact... Agent:

20130049209 - Semiconductor device with damascene bit line and method for manufacturing the same: A semiconductor device includes first conductive patterns adjacent to each other and isolated by a trench including first and second trenches, a second conductive pattern formed in the first trench, and an insulating pattern partially filling the second trench under the second conductive pattern and formed between the first conductive... Agent:

20130049210 - Semiconductor wafer and laminate structure including the same: According to one embodiment, a semiconductor wafer includes a semiconductor substrate and an interconnect layer formed on the semiconductor substrate. In the semiconductor wafer, the semiconductor substrate includes a first region that is located on the outer periphery side of the semiconductor substrate and that is not covered with the... Agent: Kabushiki Kaisha Toshiba

20130049213 - Configuration of connections in a 3d stack of integrated circuits: There is provided a connection configuration for a multiple layer chip stack having two or more strata. Each of the two or more strata has multiple circuit components, a front-side and a back-side. The connection configuration includes a connection pair having as members a front-side connection and a backside connection... Agent: International Business Machines Corporation

20130049216 - Die-to-die gap control for semiconductor structure and method: An embodiment is a structure comprising a substrate, a first die, and a second die. The substrate has a first surface and a second surface opposite the first surface. The substrate has a through substrate via extending from the first surface towards the second surface. The first die is attached... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130049215 - Integrated circuit including front side and back side electrical interconnects: In one example, an integrated circuit includes a silicon on insulator (SOI) substrate including a plurality transistors disposed in a layer of the SOI substrate and a base oxide layer disposed on a first side of the layer. The integrated circuit also may include a first interconnect formed on the... Agent: Honeywell International Inc.

20130049214 - Method of processing at least one die and die arrangement: In various embodiments, a method of processing at least one die may include: forming at least one placeholder element over at least one contact pad of at least one die; forming a die embedding layer to at least partially embed the at least one die and the at least one... Agent: Infineon Technologies Ag

20130049226 - Methods for forming interconnect structures: A method for forming a semiconductor structure includes forming a sacrificial layer over a substrate. A first dielectric layer is formed over the sacrificial layer. A plurality of conductive structures are formed within the sacrificial layer and the first dielectric layer. The sacrificial layer is treated through the first dielectric... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20130049224 - Packaging dram and soc in an ic package: An integrated circuit package includes a first memory die having a first set of connections, a second memory die arranged adjacent to the first memory die, the second memory die having a second set of connections, a first substrate having a first opening and a second opening, the first substrate... Agent:

20130049219 - Semiconductor device and method for forming the same: A system and method for forming and using a liner is provided. An embodiment comprises forming an opening in an inter-layer dielectric over a substrate and forming the liner along the sidewalls of the opening. A portion of the liner is removed from a bottom of the opening, and a... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130049222 - Semiconductor device and method of manufacturing the same: A method of manufacturing a semiconductor device includes forming select lines extending in a second direction crossing a first direction on a semiconductor substrate, wherein the semiconductor substrate has active regions separated by an isolation layer and extending in the first direction, forming junctions by implanting first impurities into the... Agent:

20130049223 - Semiconductor device and semiconductor chip: The present invention is applicable to a semiconductor device having a plurality of chips being stacked with a TSV structure in which adjacent ones of the chips are connected to each other via a plurality of through electrodes. Each of the chips includes a plurality of TSV array portions provided... Agent: Elpida Memory, Inc.

20130049218 - Semiconductor device packaging having pre-encapsulation through via formation: A method for forming signal conduits before encapsulation for incorporation as through vias in a semiconductor device package is provided. One or more signal conduits are formed through photolithography and metal deposition on a metal film or substrate. After removing photoresistive material, the semiconductor device package is built by encapsulating... Agent:

20130049217 - Semiconductor device packaging having pre-encapsulation through via formation using drop-in signal conduits: A semiconductor device package having pre-formed and placed through vias and a process for making such a package is provided. One or more signal conduits are placed in a holder that is subsequently embedded in an encapsulated semiconductor device package. The ends of the signal conduits are exposed and the... Agent:

20130049221 - Semiconductor package having plural semiconductor chips and method of forming the same: A semiconductor package includes a first semiconductor chip mounted to a substrate, a first encapsulant covering the first semiconductor chip and have first to fourth sidewall surfaces, and a chip stack mounted to the substrate and disposed on the first encapsulant. The chip stack includes a plurality of second semiconductor... Agent: Samsung Electronics Co., Ltd.

20130049225 - Stacked integrated circuit packages that include monolithic conductive vias: Microelectronic packages are fabricated by stacking integrated circuits upon one another. Each integrated circuit includes a semiconductor layer having microelectronic devices and a wiring layer on the semiconductor layer having wiring that selectively interconnects the microelectronic devices. After stacking, a via is formed that extends through at least two of... Agent: Samsung Electronics Co., Ltd.

20130049220 - Through silicon via keep out zone formation method and system: Keep out zones (KOZ) are formed for a through silicon via (TSV). A device can be placed outside a first KOZ of a TSV determined by a first performance threshold so that a stress impact caused by the TSV to the device is less than a first performance threshold while... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130049227 - Package stacks and method of manufacturing the same: A package stack includes a first package, a second package, first solder balls and a molding member. The first package includes a first package substrate, a first semiconductor chip on the first package substrate and connecting pads. The second package includes a second package substrate and a second semiconductor chip... Agent:

20130049229 - Semiconductor chip device with solder diffusion protection: Various methods and apparatus for establishing thermal pathways for a semiconductor device are disclosed. In one aspect, a method of manufacturing is provided that includes providing a first semiconductor chip that has a substrate and a first active circuitry portion extending a first distance into the substrate. A barrier is... Agent:

20130049228 - Semiconductor package having supporting plate and method of forming the same: A semiconductor package may include a packaging substrate, a first semiconductor chip on the packaging substrate, and a support plate on the packaging substrate. The support plate may be spaced apart from the first semiconductor chip in a direction parallel with respect to a surface of the packaging substrate. A... Agent: Samsung Electronics Co., Ltd.

20130049230 - Stacking method and stacking carrier: A stacking carrier and a stacking method are provided. The stacking method is used between a wafer and a stacking carrier having the same shape. The stacking method includes the following steps. Firstly, an adhesive layer is coated on a surface of the carrier. Then, the adhesive layer corresponding to... Agent: Victory Gain Group Corporation

20130049231 - Semiconductor device and method for making the same: A semiconductor device includes a semiconductor chip, a die pad including an obverse surface on which the semiconductor chip is bonded, a lead spaced apart from the die pad, a bonding wire electrically connecting the semiconductor chip and the lead to each other, and a resin package that seals the... Agent: Rohm Co., Ltd.

20130049233 - Chip package and method for making same: A chip package includes a substrate, a pad, a double-sided adhesive tape, a chip, and a sealing member. The pad is arranged on the substrate and has a top surface facing away from the substrate. The double-sided adhesive tape includes a first paste surface and an opposing second paste surface.... Agent: Hon Hai Precision Industry Co., Ltd.

20130049232 - Component assembly using a temporary attach material: A method of attaching a die to a carrier using a temporary attach material is disclosed. The method comprises attaching the temporary attach material between a surface of the die and a surface of the carrier. The temporary attach material attaches the die to the carrier. The method comprises bonding... Agent: General Electric Company

20130049234 - Substrate dicing: A method and apparatus for separating a substrate into individual dies and the resulting structure is provided. A modification layer, such as an amorphous layer, is formed within the substrate. A laser focused within the substrate may be used to create the modification layer. The modification layer creates a relatively... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130043451 - Nonvolatile memory elements and memory devices including the same: Nonvolatile memory elements and memory devices including the nonvolatile memory elements. A nonvolatile memory element may include a memory layer between two electrodes, and the memory layer may have a multi-layer structure. The memory layer may include a base layer and an ionic species exchange layer and may have a... Agent: Samsung Electronics Co., Ltd.

20130043454 - Non-volatile resistive switching memories formed using anodization: Non-volatile resistive-switching memories formed using anodization are described. A method for forming a resistive-switching memory element using anodization includes forming a metal containing layer, anodizing the metal containing layer at least partially to form a resistive switching metal oxide, and forming a first electrode over the resistive switching metal oxide.... Agent: Intermolecular, Inc.

20130043453 - Nonvolatile memory devices that use resistance materials and internal electrodes: A nonvolatile memory device, a method of fabricating the nonvolatile memory device and a processing system including the nonvolatile memory device. The nonvolatile memory device may include a plurality of internal electrodes that extend in a direction substantially perpendicular to a face of a substrate, a plurality of first external... Agent:

20130043452 - Structures and methods for facilitating enhanced cycling endurance of memory accesses to re-writable non volatile two terminal memory elements: Structures and methods to enhance cycling endurance of BEOL memory elements are disclosed. In some embodiments, a memory element can include a support layer having a smooth and planar upper surface as deposited or as created by additional processing. A first electrode is formed the smooth and planar upper surface.... Agent: Unity Semiconductor Corporation

20130043456 - Nonvolatile memory cell, nonvolatile memory device and method for driving the same: A nonvolatile memory cell is able to reduce the size per the unit area by employing a dual gate structure where the chalcogenide compound is used for a channel. The nonvolatile memory cell includes a phase-change layer, a first and a second gate that are in contact with sides of... Agent:

20130043455 - Vertical cross point arrays for ultra high density memory applications: An ultra-high-density vertical cross-point array comprises a plurality of horizontal line layers having horizontal lines interleaved with a plurality of vertical lines arranged in rows and columns. The vertical lines are interleaved with the horizontal lines such that a row of vertical lines is positioned between each consecutive pair of... Agent: Unity Semiconductor Corporation

20130043457 - Light emitting device: Provided are a light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes: a first conductive semiconductor layer; a superlattice layer on the first conductive semiconductor layer; an active layer on the superlattice layer; and a second... Agent:

20130043458 - Long wavelength infrared superlattice: An embodiment of the present invention improves the fabrication and operational characteristics of a type-II superlattice material. Layers of indium arsenide and gallium antimonide comprise the bulk of the superlattice structure. One or more layers of indium antimonide are added to unit cells of the superlattice to provide a further... Agent: Svt Associates, Inc.

20130043459 - Long wavelength infrared superlattice: An embodiment of the present invention improves the fabrication and operational characteristics of a type-II superlattice material. Layers of indium arsenide and gallium antimonide comprise the bulk of the superlattice structure. One or more layers of indium antimonide are added to unit cells of the superlattice to provide a further... Agent: Svt Associates, Inc.

20130043462 - Asphaltene components as organic electronic materials: Asphaltene components are useful as organic electronic materials, especially in the form of thin films, in organic electronic devices, such as optoelectronic devices, for example, photodiodes (e.g., photovoltaic cells), phototransistors, photomultipliers, integrated optical circuits, photoresistors, and the like.... Agent:

20130043460 - Carbazole serial compounds: wherein X is selected from a halogen atom, a cyano group, a substituted or non-substituted C1-40 alkyl group, a substituted or non-substituted C2-40 alkenyl group, a substituted or non-substituted C2-40 alkynyl group, a substituted or non-substituted C6-40 aryl group, a substituted or non-substituted C4-40 hetero aryl group, a substituted or... Agent:

20130043463 - Novel organic compound: e

20130043461 - Organic electroluminescent element and display medium: An organic electroluminescent element includes a pair of electrodes composed of a positive electrode and a negative electrode, with at least one of the electrodes being transparent or semi-transparent, and one or more organic compound layers interposed between the pair of electrodes, with at least one layer containing one or... Agent: Fuji Xerox Co., Ltd.

20130043465 - Semiconductor device: An oxide semiconductor transistor comprising an oxide semiconductor layer with high conductivity is provided. A semiconductor device including an oxide semiconductor layer comprising an oxide containing indium, gallium, and zinc (IGZO) and a particle of indium oxide; a gate electrode overlapping with a channel formation region in the oxide semiconductor... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130043466 - Semiconductor device and method for manufacturing the same: A semiconductor device including an oxide semiconductor and including a more excellent gate insulating film is provided. A highly reliable and electrically stable semiconductor device having a small number of changes in the film structure, the process conditions, the manufacturing apparatus, or the like from a mass production technology that... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130043467 - Thin film device and manufacturing method thereof: With a TFT using an oxide semiconductor film, there is such an issue that oxygen deficit is generated in a surface region of the oxide semiconductor film after performing plasma etching of a source/drain electrode, thereby increasing the off-current. Provided is a TFT which includes: a gate electrode on an... Agent: Nlt Technologies, Ltd.

20130043464 - Thin film transistor, pixel structure and method for fabricating the same: A thin film transistor (TFT) that includes a gate, an oxide semiconductor layer, a gate insulator, a source, and a drain is provided. The gate insulator is located between the oxide semiconductor layer and the gate. The source and the drain are in contact with different portions of the oxide... Agent: Au Optronics Corporation

20130043469 - Thin-film transistor and method for manufacturing the same: In a TFT that adopts an oxide semiconductor as an active layer and has a resistance layer interposed between the active layer and one of a source and drain electrode, while Vth close to 0 V and a small off current are sustained, an on-current is increased. In a thin-film... Agent:

20130043468 - Vertical field effect transistor on oxide semiconductor substrate: A transistor, such as a vertical metal field effect transistor, can include a substrate including a ZnO-based material, and a structure disposed on a first side of the substrate comprising of AlGaN-based materials and electrodes disposed on the second side of the substrate. The transistor can also include a plurality... Agent: Ramgoss, Inc.

20130043470 - Crack stop structure and method for forming the same: The present invention in a first aspect proposes a semiconductor structure with a crack stop structure. The semiconductor structure includes a matrix, an integrated circuit and a scribe line. The matrix includes a scribe line region and a circuit region. The integrated circuit is disposed within the circuit region. The... Agent:

20130043471 - Magnetic tunnel junction for mram applications: Reading margin is improved in a MTJ designed for MRAM applications by employing a pinned layer with an AP2/Ru/AP1 configuration wherein the AP1 layer is a CoFeB/CoFe composite and by forming a MgO tunnel barrier adjacent to the CoFe AP1 layer by a sequence that involves depositing and oxidizing a... Agent: Magic Technologies, Inc.

20130043474 - Active array substrate and method for manufacturing the same: Disclosed herein is a method for manufacturing an active array substrate. The method includes the steps of: forming a first patterned metal layer on a substrate; sequentially forming a semiconductor layer, an insulating layer and a second metal layer to cover the first patterned metal layer; forming a patterned photoresist... Agent: E Ink Holdings Inc.

20130043477 - Array substrate for liquid crystal display device and method of manufacturing the same: An array substrate for a liquid crystal display device comprises: gate and data lines crossing each other on a substrate to define a pixel region; a common line spaced apart from and parallel with the gate line; a thin film transistor in the pixel region and connected to the gate... Agent:

20130043478 - Display device and controlling method thereof: A conventional setting voltage was a value with an estimated margin of a characteristic change of a light emitting element. Therefore, a voltage between the source and drain of a driver transistor Vds had to be set high (Vds≦Vgs−VTh+a). This caused high heat generation and power consumption because a voltage... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130043473 - Display substrate and method of manufacturing the same: A display substrate includes a data line, a gate line and a fan-out line. The data line is disposed in a display area of a base substrate and transfers a data signal to a switching element electrically connected to a pixel electrode. The gate line is disposed in the display... Agent: Samsung Electronics Co., Ltd.

20130043472 - Thin film transistor array structure and manufacturing method thereof: A thin film transistor (TFT) array structure for a liquid crystal display (LCD) includes a panel, a first conductive layer, a middle layer, a second conductive layer, a passivation layer, and a black electrode layer. The first conductive layer is formed on the panel using filming technologies and a first... Agent: Shenzhen China Star Optoelectronics Technology Co., Ltd.

20130043476 - Thin film transistor substrate and display device comprising the same: The invention provides a thin film transistor substrate and a display device including the same. The thin film transistor substrate includes: a substrate; a gate line, a gate insulating layer and an active layer sequentially formed on the substrate; a source and a drain simultaneously formed on the active layer... Agent: Innocom Technology (shenzhen) Co., Ltd.

20130043475 - Transistors and electronic devices including the transistors: A transistor may include a light-blocking layer that blocks light incident on a channel layer. The light-blocking layer may include a carbon-based material. The carbon-based material may include graphene oxide, graphite oxide, graphene or carbon nanotube (CNT). The light-blocking layer may be between a gate and at least one of... Agent: Samsung Electronics Co., Ltd.

20130043479 - Thin film transistor substrate and method for fabricating the same: A thin film transistor substrate includes a substrate, a gate electrode on the substrate, an active layer on or below the gate electrode (the active layer at least partially overlapping the gate electrode) including a first active region and a second active region, the first active region and the second... Agent:

20130043480 - Exposure device, exposure method and method of manufacturing semiconductor device: The present invention provides a highly controllable device for exposure from the back side and an exposure method, and also provides a method of manufacturing a semiconductor device using the same. The present invention involves exposure with the use of the back side exposure device of which a reflecting means... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130043488 - Epitaxial substrate and method for manufacturing epitaxial substrate: Provided is a crack-free epitaxial substrate having excellent breakdown voltage properties in which a silicon substrate is used as a base. The epitaxial substrate includes a (111) single crystal Si substrate and a buffer layer including a plurality of first lamination units. Each of those units includes a composition modulation... Agent: Ngk Insulators, Ltd.

20130043485 - Gan-based semiconductor device: A p-type GaN-based semiconductor device is provided. Porivded is a GaN-based semiconductor device including: a first channel layer which is formed from a GaN-based semiconductor, and in which a carrier gas of a first conductivity type occurs; a barrier layer formed on the first channel layer from a GaN-based semiconductor... Agent: Advanced Power Device Research Association

20130043484 - Hemt with integrated low forward bias diode: A high electron mobility transistor includes a source, gate and drain, a first III-V semiconductor region having a two-dimensional electron gas (2DEG) which provides a first conductive channel controllable by the gate between the source and drain, and a second III-V semiconductor region below the first III-V semiconductor region and... Agent: Infineon Technologies Austria Ag

20130043482 - High linearity bandgap engineered transistor: A high linearity bandgap engineered transistor device is provided. In one example configuration, the device generally includes a substrate and an oxide layer formed on the substrate. The device further includes a wide-bandgap body material formed between a portion of the oxide layer and a gate dielectric layer. The wide-bandgap... Agent: Bae Systems Information & Electronic Systems Integration Inc.

20130043483 - High linearity hybrid transistor device: A hybrid transistor device is provided. In one example case, the device includes a substrate, an oxide layer formed on the substrate, and a wide-bandgap body material formed between a portion of the oxide layer and a gate dielectric layer. The wide-bandgap body material has an energy bandgap higher than... Agent: Bae Systems Information & Electronic Systems Integration Inc.

20130043481 - High-voltage solid-state transducers and associated systems and methods: High-voltage solid-state transducer (SST) devices and associated systems and methods are disclosed herein. An SST device in accordance with a particular embodiment of the present technology includes a carrier substrate, a first terminal, a second terminal and a plurality of SST dies connected in series between the first and second... Agent: Micron Technology, Inc.

20130043487 - Layout design for a high power, gan-based fet: A FET includes a first and second set of finger arrays that each include a source, gate and drain. A first source pad is electrically coupled to source electrodes in the first set of finger arrays. A second source pad is electrically coupled to the source electrodes in the second... Agent: Power Integrations, Inc.

20130043486 - System and methods for preparing freestanding films using laser-assisted chemical etch, and freestanding films formed using same: Systems and methods for preparing freestanding films using laser-assisted chemical etch (LACE), and freestanding films formed using same, are provided. In accordance with one aspect a substrate has a surface and a portion defining an isotropically defined cavity; and a substantially continuous film is disposed at the substrate surface and... Agent: The Aerospace Corporation

20130043489 - Compound semiconductor device and method for manufacturing the same: A compound semiconductor device includes: a substrate; a GaN compound semiconductor multilayer structure disposed over the substrate; and a stress relief layer which is AlN-based and which is disposed between the substrate and the GaN compound semiconductor multilayer structure, wherein a surface of the stress relief layer that is in... Agent: Fujitsu Limited

20130043492 - Nitride semiconductor transistor: A nitride semiconductor transistor includes a heterojunction layer including a plurality of nitride semiconductor layers having different polarizations, and a gate electrode disposed on the heterojunction layer. An electron current reduction layer having a p-type conductivity is disposed between the heterojunction layer and the gate electrode to pass hole current... Agent: Panasonic Corporation

20130043491 - Schottky diodes including polysilicon having low barrier heights: Hybrid semiconductor devices including a PIN diode portion and a Schottky diode portion are provided. The PIN diode portion is provided on a semiconductor substrate and has an anode contact on a first surface of the semiconductor substrate. The Schottky diode portion is also provided on the semiconductor substrate and... Agent: Cree, Inc.

20130043490 - Semiconductor device and method for fabricating the device: The semiconductor device 100 of this invention includes: a semiconductor layer 2 arranged on the principal surface of a substrate 1 and made of a wide bandgap semiconductor; a trench 5 which is arranged in the semiconductor layer 2 and which has a bottom and a side surface; an insulating... Agent: Panasonic Corporation

20130043495 - Active matrix substrate and display device: The present invention provides an active matrix substrate in which a peripheral can be narrowed or a gap between adjacent wirings increased to improve a yield. The present invention is an active matrix substrate in which a peripheral region is provided outside a display region. In the active matrix substrate,... Agent: Sharp Kabushiki Kaisha

20130043494 - Light emitting diode package: The present invention relates to a light emitting diode package which can reduce a wire length, and can improve heat and light resistance. The light emitting diode package includes a molded portion having a housing, a plurality of light emitting chips housed in the housing, a plurality of main lead... Agent:

20130043493 - Light-emitting diode structure: A light-emitting diode (LED) structure includes a substrate, a plurality of LED chips, a first colloid, a second colloid, and a lens. The substrate is provided with at least one retaining section, and the LED chips are mounted on the substrate and covered by the first colloid. The second colloid... Agent: Richard, Ta-chung Wang

20130043496 - Lighting device: A lighting device with front carrier, rear carrier and plurality of light-emitting diode chips, which when in operation emits light and releases waste heat, wherein rear carrier is covered at least in selected locations by front carrier, light-emitting diode chips are arranged between rear carrier and front carrier to form... Agent: Osram Opto Semiconductors Gmbh

20130043497 - Packaging device for matrix-arrayed semiconductor light-emitting elements of high power and high directivity: A packaging device for matrix-arrayed semiconductor light-emitting elements of high power and high directivity comprises a metal base, an array chip and a plurality of metal wires. The metal base is of highly heat conductive copper or aluminum, and a first electrode area and at least one second electrode area... Agent: Truelight Corporation

20130043498 - Organic light emitting diode display and manufacturing method thereof: An organic light emitting diode (OLED) display includes a red pixel, a green pixel, and a blue pixel. The red pixel, the green pixel and the blue pixel each includes: a pixel electrode; a hole auxiliary layer on the pixel electrode; a blue organic emission layer on the hole auxiliary... Agent: Samsung Mobile Display Co., Ltd.

20130043501 - Led module: An LED module A1 is provided with: a first lead 1 including a die-bonding portion 12 with a mount surface 12a, and a front-end sunk portion 14; a second lead 2 including a wire-bonding portion 22 and spaced apart from the first lead 1; an LED chip 3 mounted on... Agent: Rohm Co., Ltd.

20130043500 - Light emitting device: A light emitting device includes: a semiconductor multilayer film formed on a principal surface of a substrate, and including an active layer configured to generate light at a first wavelength; and a fluorescent material layer formed on the semiconductor multilayer film, and forming a first two-dimensional periodic structure. The fluorescent... Agent: Panasonic Corporation

20130043502 - Light emitting device and method for manufacturing the same: A light emitting device 10 includes a light emitting element 11, a package 13 in which the light emitting element 11 is accommodated, and a sealing member 14 configured to seal the light emitting element 11. The package 13 includes a base 13B configured to hold the light emitting element... Agent: Panasonic Corporation

20130043499 - Semiconductor light-emitting device: A semiconductor light-emitting device (A) having a simple configuration whereby it is possible to easily and accurately confirm whether or not ultraviolet light is being emitted, the semiconductor light-emitting device comprising: a semiconductor light-emitting element (1) for emitting ultraviolet light in an ultraviolet or deep ultraviolet region; a cap part... Agent: Sharp Kabushiki Kaisha

20130043504 - Led module: A lead 1 includes a die-bonding portion 11 with an opening 11a penetrating in a thickness direction. Another lead 2 is spaced from the lead 1. An LED unit 3 includes an LED chip 30 with a electrode terminal 31 connected to the lead 1 and another electrode terminal 32... Agent: Rohm Co., Ltd.

20130043503 - Semiconductor light emitting device and method for manufacturing the same: A semiconductor light emitting device, which includes a light transmissive electrode layer formed using a conductive thin film and an insulating thin film to substitute for a transparent electrode layer, comprises a substrate; a first semiconductor layer formed on the substrate; an active layer formed on the first semiconductor layer;... Agent:

20130043505 - Apparatuses and methods comprising a channel region having different minority carrier lifetimes: Apparatuses, such as memory devices, memory cell strings, and electronic systems, and methods of forming such apparatuses are shown. One such apparatus includes a channel region that has a minority carrier lifetime that is lower at one or more end portions, than in a middle portion. Other apparatuses and methods... Agent: Micron Technology, Inc.

20130043506 - Fin-fet and method of forming the same: A method of forming a Fin-FET is provided. A substrate is provided, then a mask layer is formed thereabove. A first trench is formed in the substrate and the mask layer. A semiconductor layer is formed in the first trench. Next, the mask layer is removed such that the semi-conductive... Agent:

20130043507 - Semiconductor device with a buried stressor: A semiconductor device, such as a PMOS or NMOS device, having localized stressors is provided. Recesses are formed on opposing sides of a gate electrode. A stress-inducing region is formed along a bottom of the recess, and a stressed layer is formed over the stress-inducing region. By having a stress-inducing... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130043508 - Method for manufacturing a low defect interface between a dielectric and a iii-v compound: The present invention is related to a method for manufacturing a low defect interface between a dielectric material and an III-V compound. More specifically, the present invention relates to a method for manufacturing a passivated interface between a dielectric material and an III-V compound. The present invention is also directed... Agent:

20130043509 - 3-d structured non-volatile memory device and method of manufacturing the same: A non-volatile memory device according to an aspect of the present disclosure includes a substrate, a plurality of word lines stacked over the substrate and having a stepwise pattern, wherein the plurality of word lines each have a pad region, and a plurality of contact plugs coupled to the respective... Agent:

20130043510 - Structure and method for motion sensor: The present disclosure provides one embodiment of a motion sensor structure. The motion sensor structure includes a first substrate having an integrated circuit formed thereon; a second substrate bonded to the first substrate from a first surface, wherein the second substrate includes a motion sensor formed thereon; and a third... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130043511 - Integrated circuits and methods of forming integrated circuits: An integrated circuit includes a gate electrode disposed over a substrate. A source/drain (S/D) region is disposed adjacent to the gate electrode. The S/D region includes a diffusion barrier structure disposed in a recess of the substrate. The diffusion barrier structure includes a first portion and a second portion. The... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130043514 - Multiphase ultra low k dielectric material: A multiphase ultra low k dielectric process incorporating an organo-silicon precursor including an organic porogen, high frequency radio frequency power just above plasma initiation in a PECVD chamber and energy post treatment. A porous SiCOH dielectric material having a k less than 2.7 and a modulus of elasticity greater than... Agent: International Business Machines Corporation

20130043516 - Semiconductor device and manufacturing method thereof: A method for manufacturing a semiconductor device includes forming a contact etch stop layer on an active area of a substrate that has a gate stack formed thereon. The gate stack includes a metal gate and a metal oxide. The contact etch stop layer includes a silicon oxide layer sandwiched... Agent: Semiconductor Manufacturing International (beijing) Corporation

20130043518 - Semiconductor device and method of fabricating the same: A method of fabricating a semiconductor device includes forming an interlayer dielectric on a substrate, the interlayer dielectric including first and second openings respectively disposed in first and second regions formed separately in the substrate; forming a first conductive layer filling the first and second openings; etching the first conductive... Agent: Samsung Electronics Co., Ltd.

20130043512 - Semiconductor device manufacturing methods and methods of forming insulating material layers: Semiconductor device manufacturing methods and methods of forming insulating material layers are disclosed. In one embodiment, a method of forming a composite insulating material layer of a semiconductor device includes providing a workpiece and forming a first sub-layer of the insulating material layer over the workpiece using a first plasma... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130043517 - Semiconductor structure and method for manufacturing the same: The present invention provides a method for manufacturing a semiconductor structure, which comprises: providing a substrate, and forming a dielectric layer and a dummy gate layer on the substrate; performing doping and annealing to the dummy gate layer; patterning the dummy gate layer to form a dummy gate, wherein the... Agent:

20130043513 - Shallow trench isolation structure and fabricating method thereof: A fabricating method of a shallow trench isolation structure includes the following steps. Firstly, a substrate is provided, wherein a high voltage device area is defined in the substrate. Then, a first etching process is performed to partially remove the substrate, thereby forming a preliminary shallow trench in the high... Agent: United Microelectronics Corporation

20130043515 - Strained channel field effect transistor and the method for fabricating the same: The present invention discloses a strained channel field effect transistor and a method for fabricating the same. The field effect transistor comprises a substrate, a source/drain, a gate dielectric layer, and a gate, characterized in that, an “L” shaped composite isolation layer, which envelops a part of a side face... Agent:

20130043520 - Raised source/drain field effect transistor: In one exemplary embodiment of the invention, a semiconductor structure includes: a substrate; and a plurality of devices at least partially overlying the substrate, where the plurality of devices include a first device coupled to a second device via a first raised source/drain having a first length, where the first... Agent: International Business Machines Corporation

20130043519 - Semiconductor devices using shaped gate electrodes: A device includes a semiconductor substrate and a gate insulation film lining a trench in an active region of the substrate. A gate electrode pattern is recessed in the trench on the gate insulation film and has an upper surface that has a nonuniform height. A dielectric pattern may be... Agent: Samsung Electronics Co., Ltd.

20130043521 - 3-dimensional non-volatile memory device and method of manufacturing the same: A method of manufacturing a 3-Dimensional (3-D) non-volatile memory device includes forming first material layers and second material layers alternately, forming at least one first trench by etching the first material layers and the second material layers, forming floating gate regions by recessing the second material layers, exposed to the... Agent:

20130043522 - Semiconductor structure and method of forming the same: A method of forming a semiconductor structure is provided. A substrate having a cell area and a periphery area is provided. A stacked structure including a gate oxide layer, a floating gate and a first spacer is formed on the substrate in the cell area and a resistor is formed... Agent: Maxchip Electronics Corp.

20130043523 - Nonvolatile semiconductor memory device and method of manufacturing the same: According to one embodiment, a nonvolatile semiconductor memory device includes a plurality of gate electrode structures formed on a semiconductor substrate and an insulating film which covers the gate electrode structures and has an air gap in it. Each of the gate electrode structures includes a gate insulting film, a... Agent:

20130043524 - Semiconductor device: Each insulating gate portion forms a channel in part of a first well region located between a drift region and source region. A first main electrode forms junctions with part of the drift region exposed in the major surface of the drift region to constitute unipolar diodes and is connected... Agent: Nissan Motor Co Ltd

20130043525 - Semiconductor devices including a vertical channel transistor and methods of fabricating the same: According to example embodiments, a semiconductor device includes a plurality of active pillars protruding from a substrate. Each active pillar includes a channel region between upper and lower doped regions. A contact gate electrode faces the channel region and is connected to a word line. The word line extends in... Agent: Samsung Electronics Co., Ltd.

20130043526 - Method of making an insulated gate semiconductor device with source-substrate connection and structure: In one embodiment, a source-down vertical insulated gate field effect transistor includes a source contact that is buried within a trench gate structure. Dopant of a first conductivity type is diffused from the conductive source contact into an adjacent semiconductor layer that has a second and opposite conductivity type to... Agent:

20130043528 - Power transistor device and fabricating method thereof: The present invention provides a power transistor device including a substrate, a first epitaxial layer, a doped diffusion region, a second epitaxial layer, a doped base region, and a doped source region. The substrate, the first epitaxial layer, the second epitaxial layer and the doped source region have a first... Agent:

20130043527 - Shielded gate trench mosfet package: A shielded gate trench field effect transistor can be formed on a substrate having an epitaxial layer on the substrate and a body layer on the epitaxial layer. A trench formed in the body layer and epitaxial layer is lined with a dielectric layer. A shield electrode is formed within... Agent:

20130043529 - Circuit structure with vertical double gate: A circuit structure including a semiconductor substrate having a depression; a first insulating layer positioned on the surface of the depression; a bottom conductor positioned in a bottom portion of the depression, wherein the bottom conductor is connected to an external bias through a plurality of longer vertical contact plugs;... Agent: Nan Ya Technology Corporation

20130043530 - Data storing devices and methods of fabricating the same: A data storing device may include a substrate, transistors on the substrate that include gate line structures, and conductive isolation patterns defining active regions of the transistors. Each conductive isolation pattern includes at least one portion buried in the substrate and the conductive isolation patterns are electrically connected with each... Agent:

20130043531 - Vertically stacked fin transistors and methods of fabricating and operating the same: A semiconductor device is disclosed having vertically stacked (also referred to as vertically offset) transistors in a semiconductor fin. The semiconductor fin may include lower transistors separated by a first trench and having a source and drain in a first doped region of the fin. The semiconductor fin also includes... Agent: Micron Technology, Inc.

20130043532 - Lateral high-voltage transistor and associated method for manufacturing: The present disclosure discloses a lateral high-voltage transistor and associated method for making the same. The lateral high-voltage transistor comprises a semiconductor layer of a first conductivity type; a source region of a second conductivity type opposite to the first conductivity type in the semiconductor layer; a drain region of... Agent:

20130043533 - Transistor having wing structure: A semiconductor device includes an active region having a channel region and at least a wing region adjoining the channel region under the gate dielectric layer. The at least one wing region may be two symmetrical wing regions across the channel region.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130043534 - High density lateral dmos and associated method for making: The present disclosure discloses a lateral DMOS with recessed source contact and method for making the same. The lateral DMOS comprises a recessed source contact which has a portion recessed into a source region to reach a body region of the lateral DMOS. The lateral DMOS according to various embodiments... Agent:

20130043536 - Buffered finfet device: One embodiment relates to a buffered transistor device. The device includes a buffered vertical fin-shaped structure formed in a semiconductor substrate. The vertical fin-shaped structure includes at least an upper semiconductor layer, a buffer region, and at least part of a well region. The buffer region has a first doping... Agent:

20130043535 - Isolation region fabrication for replacement gate processing: A method for isolation region fabrication for replacement gate integrated circuit (IC) processing includes forming a plurality of dummy gates on a substrate; forming a block mask over the plurality of dummy gates, such that the block mask selectively exposes a dummy gate of the plurality of dummy gates; removing... Agent: International Business Machines Corporation

20130043537 - Semiconductor device and method for manufacturing semiconductor device: There is provided a semiconductor device and a method for manufacturing a semiconductor device. Within the N-type semiconductor layer formed from a high resistance N-type substrate, the P-type well diffusion layer and P-type extraction layer are formed and are fixed to ground potential. Due thereto, a depletion layer spreading on... Agent: Inter-university Research Institute Corporation High Energy Accelerator Research Organization

20130043538 - Switch: The switch in this invention is connected in series with two field effect transistor, comprises: the source S1 of first N-channel FET F1 and the source S2 of second N-channel FET F2 are directly connected together form a third terminal VA, the gate G1 of first N-channel FET F1 and... Agent:

20130043540 - Implant for performance enhancement of selected transistors in an integrated circuit: A first implant is performed into a substrate to form a well in which a plurality of transistors will be formed. Each transistor of a first subset of the plurality of transistors to be formed has a width that satisfies a predetermined width constraint and each transistor of a second... Agent:

20130043539 - Interlayer dielectric structure and method making the same: The present disclosure provides a method of making an integrated circuit. The method includes forming a gate stack on a semiconductor substrate; forming a stressed contact etch stop layer (CESL) on the gate stack and on the semiconductor substrate; forming a first dielectric material layer on the stressed CESL using... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130043541 - Low power/high speed tsv interface design: A TSV interface circuit for a TSV provided in an interposer substrate that forms a connection between a first die and a second die includes a driving circuit provided in the first die and a receiver circuit provided in the second die where the driving circuit is coupled to a... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20130043542 - Semiconductor device and method of manufacturing the same: A polysilicon film that serves as a resistance element is formed. The polysilicon film is patterned to a predetermined shape. CVD oxide films covering the patterned polysilicon film are etched thereby removing the portion of the CVD oxide film where the contact region is formed, leaving the portion covering the... Agent: Renesas Electronics Corporation

20130043543 - Semiconductor device and method of manufacturing the same: A semiconductor device includes a semiconductor substrate including a first driving transistor region having a first driving transistor disposed therein and a second driving transistor region having a second driving transistor disposed therein, wherein the second driving transistor is driven at a lower voltage than the first driving transistor, a... Agent:

20130043544 - Structure having three independent finfet transistors: A semiconductor chip has a FinFET structure with three independently controllable FETs on a single fin. The three FETs are connected in parallel so that current will flow between a common source and a common drain if one or more of the three independently controllable FETs is turned on. The... Agent: International Business Machines Corporation

20130043545 - Semiconductor device having high-k gate dielectric layer and manufacturing method thereof: The disclosure relates to integrated circuit fabrication and, more particularly, to a semiconductor device with a high-k gate dielectric layer. An exemplary structure for a semiconductor device comprises a substrate and a gate structure disposed over the substrate. The gate structure comprises a dielectric portion and an electrode portion that... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130043546 - Semiconductor contact barrier: System and method for reducing contact resistance and improving barrier properties is provided. An embodiment comprises a dielectric layer and contacts extending through the dielectric layer to connect to conductive regions. A contact barrier layer is formed between the conductive regions and the contacts by electroless plating the conductive regions... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130043547 - Mems device having chip scale packaging: A method and device having chip scale MEMS packaging is described. A first substrate includes a MEMS device and a second substrate includes an integrated circuit. The frontside of the first substrate is bonded to the backside of the second substrate. Thus, the second substrate provides a cavity to encase,... Agent: Taiwan Semiconductor Manufacturing Company, Ltd. ("tsmc")

20130043548 - Method for manufacturing a micromechanical structure, and micromechanical structure: A method for manufacturing a micromechanical structure includes: forming a first insulation layer above a substrate; forming a first micromechanical functional layer on the first insulation layer; forming multiple first trenches in the first micromechanical functional layer, which trenches extend as far as the first insulation layer; forming a second... Agent:

20130043549 - Hole first hardmask definition: A semiconductor device and a method of manufacture are provided, such as a MTJ device and a method of manufacturing a MTJ device. The MTJ device may include a bottom electrode, a MTJ stack, and a top electrode, wherein the top electrode is formed using a hole-filling technique. The top... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130043552 - Integrated infrared sensors with optical elements and methods: An infrared (IR) radiation sensor device (27) includes an integrated circuit radiation sensor chip (1A) including first (7) and second (8) temperature-sensitive elements connected within a dielectric stack (3) of the chip, the first temperature-sensitive element (7) being more thermally insulated from a substrate (2) than the second temperature-sensitive element... Agent: Texas Instruments Incorporated

20130043551 - Sloped structure, method for manufacturing sloped structure, and spectrum sensor: A method for manufacturing a sloped structure is disclosed. The method includes the steps of: (a) forming a sacrificial film above a substrate; (b) forming a first film above the sacrificial film, the first film having a first portion connected to the substrate, a second portion located above the sacrificial... Agent: Seiko Epson Corporation

20130043550 - Solid-state imaging apparatus and method for manufacturing the same: Certain embodiments provide a solid-state imaging apparatus including a first impurity layer, a second impurity layer, a third impurity layer, and an electrode. The first impurity layer is a photoelectric conversion layer, and is formed to have a constant depth on a semiconductor substrate. The second impurity layer is formed... Agent: Kabushiki Kaisha Toshiba

20130043553 - Dummy fill to reduce shallow trench isolation (sti) stress variation on transistor performance: An integrated circuit includes an active layer including an active pattern diffusion region. The integrated circuit further includes at least one guard band conforming to a shape of the active layer, the at least one guard band comprising a dummy diffusion layer, wherein the guard bans is spaced from the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130043554 - Method and structure for vertical integration of semiconductor devices: A vertically integrated semiconductor device includes multiple continuous single crystal silicon layers vertically separated from one another by a dielectric layer or layers. Semiconductor devices are disposed on an underlying single crystal silicon substrate and the continuous single crystal silicon layers. The individual devices are interconnected to one another using... Agent: Wafertech, LLC

20130043555 - Electrostatic discharge (esd) protection element and esd circuit thereof: An ESD protection circuit connected between an I/O pad and an internal circuit is disclosed. The ESD protection circuit includes a P type ESD protection element which has a first P type doped region and a first N type doped region. The covered shape of the first P type doped... Agent: Himax Technologies Limited

20130043556 - Size-filtered multimetal structures: A size-filtered metal interconnect structure allows formation of metal structures having different compositions. Trenches having different widths are formed in a dielectric material layer. A blocking material layer is conformally deposited to completely fill trenches having a width less than a threshold width. An isotropic etch is performed to remove... Agent: International Business Machines Corporation

20130043558 - Semiconductor device and communication method: A semiconductor device, includes a substrate with a first surface, a semiconductor chip disposed over the first surface of the substrate, the semiconductor chip including a first region and a second region, and an encapsulant resin formed over the first surface of the substrate and encapsulating the semiconductor chip. The... Agent: Renesas Electronics Corporation

20130043557 - Vertically oriented semiconductor device and shielding structure thereof: The present disclosure involves a semiconductor device. The semiconductor device includes a substrate having a horizontal surface. The semiconductor device includes an interconnect structure formed over the horizontal surface of the substrate. The interconnect structure includes an inductor coil that is wound substantially in a vertical plane that is orthogonal... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130043562 - Compressive polycrystalline silicon film and method of manufacture thereof: In one embodiment a method of forming a compressive polycrystalline semiconductive material layer is disclosed. The method comprises forming a polycrystalline semiconductive seed layer over a substrate and forming a silicon layer by depositing silicon directly on the polycrystalline silicon seed layer under amorphous process conditions at a temperature below... Agent: Infineon Technologies Ag

20130043560 - Metal-insulator-metal capacitor and method of fabricating: Embodiments of MIM capacitors may be embedded into a thick IMD layer with enough thickness (e.g., 10 KŘ30 KÅ) to get high capacitance, which may be on top of a thinner IMD layer. MIM capacitors may be formed among three adjacent metal layers which have two thick IMD layers separating... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130043561 - Semiconductor device and method of manufacturing the same: A semiconductor device includes a capacitor dielectric film formed on a lower electrode and made of a ferroelectric material, and an upper electrode formed on a capacitor dielectric film, wherein the lower electrode includes a lowest conductive layer and an upper conductive layer, the lowest conductive layer being made of... Agent: Fujitsu Semiconductor Limited

20130043559 - Trench formation in substrate: A method includes removing an exposed portion of a first portion of a substrate to define a first trench portion partially defined by the first portion of the substrate and expose a second portion of the substrate, the first portion of the substrate disposed on the second portion of the... Agent: International Business Machines Corporation

20130043563 - Semiconductor device and method of manufacturing the same: According to one embodiment, there is provided a method of manufacturing a semiconductor device. In the method, a substrate portion and a fin portion on the substrate portion are formed. A first silicon oxide film is formed on each side surface of the fin portion. A polysilazane film having an... Agent:

20130043564 - Attaching a mems to a bonding wafer: A MEMS is attached to a bonding wafer in part by forming a support layer over the MEMS. A first eutectic layer is formed over the support layer. The eutectic layer is patterned into segments to relieve stress. A second eutectic layer is formed over the bonding wafer. A eutectic... Agent:

20130043565 - Integrated circuit system with sub-geometry removal and method of manufacture thereof: A method of manufacture of an integrated circuit system includes: forming reticle data; detecting a sub-geometry, a singularity, or a combination thereof in the reticle data; applying a unit cell, a patch cell, or a combination thereof for removing the sub-geometry, the singularity, or the combination thereof from the reticle... Agent: Globalfoundries Singapore Pte. Ltd.

20130043566 - Semiconductor device and flip-chip package: A semiconductor device includes a substrate having a circuit formation region, an interlayer insulating film formed on the substrate, a first seal ring formed in the interlayer insulating film to surround the circuit formation region, a first protective film formed on the interlayer insulating film in the circuit formation region... Agent: Panasonic Corporation

20130043567 - Method for forming silicon film, method for forming pn junction and pn junction formed using the same: A method for forming a silicon film may be performed using a microheater including a substrate and a metal pattern spaced apart from the substrate. The silicon film may be formed on the metal pattern by applying a voltage to the metal pattern of the microheater to heat the metal... Agent: Samsung Electronics Co., Ltd.

20130043570 - Chip package and method for forming the same: A chip package includes: a substrate having a first and a second surface; a device region and a pad disposed on the first surface; a hole extending from the second surface to the pad; an insulating layer located on a sidewall of the hole; a carrier substrate located on the... Agent:

20130043569 - Integrated circuit devices and methods and apparatuses for designing integrated circuit devices: Methods and apparatuses for an Integrated Circuit (IC) with a shielding of wires. In at least one embodiment, an integrated Circuit (IC) device comprises a first plurality of signal wires disposed within a substrate a shielding mesh disposed on the substrate. In at least one embodiment, the shielding mesh comprises... Agent:

20130043568 - Memory device and a fabricating method thereof: A semiconductor device includes a substrate, a semiconductor chip, a first molding member and a metal layer. The substrate includes a first ground pad formed therein, the first ground pad having a first exposed surface exposed at a first surface of the substrate. The semiconductor chip is formed on the... Agent:

20130043571 - Power overlay structure with leadframe connections: A power overlay (POL) packaging structure that incorporates a leadframe connection is disclosed. The a POL structure includes a POL sub-module having a dielectric layer, at least one semiconductor device attached to the dielectric layer and that includes a substrate composed of a semiconductor material and a plurality of connection... Agent:

20130043572 - Bump-on-leadframe semiconductor package with low thermal resistance: In a bump-on-leadframe semiconductor package a metal bump formed on a integrated circuit die is used to facilitate the transfer of heat generated in a semiconductor substrate to a metal heat slug and then to an external mounting surface. A structure including arrays of thermal vias may be used to... Agent: Advanced Analogic Technologies, Inc.

20130043575 - Chip-packaging module for a chip and a method for forming a chip-packaging module: A chip-packaging module for a chip is provided, the chip-packaging module including a chip including a first chip side, wherein the first chip side includes an input portion configured to receive a signal; a chip carrier configured to be in electrical connection with the first chip side, wherein the chip... Agent: Infineon Technologies Ag

20130043577 - Manufacturing method thereof and a semiconductor device: In a semiconductor device, a lead frame made of a copper alloy prevents exfoliation occurring near the surface of the lead frame. A copper oxide layer is formed on the base material made of a copper alloy by immersing the base material into a solution of a strong oxidizer. The... Agent: Fujitsu Semiconductor Limited

20130043574 - Multi-die semiconductor package with one or more embedded die pads: To avoid shorts between adjacent die pads in mounting a multi-die semiconductor package to a printed circuit board (PCB), one of the die pads is embedded in the polymer capsule, while the other die pad is exposed at the bottom of the package to provide a thermal escape path to... Agent: Advanced Analogic Technologies, Inc.

20130043576 - Semiconductor device: To improve the performance and reliability of semiconductor devices. For the semiconductor chip CP1, power MOSFETs Q1 and Q2 for the switch, a diode DD1 for detecting the heat generation of the power MOSFET Q1, a diode DD2 for detecting the heat generation of the power MOSFET Q2, and plural... Agent: Renesas Electronics Corporation

20130043573 - Solder bump bonding in semiconductor package using solder balls having high-temperature cores: A semiconductor die is solder bump-bonded to a leadframe or circuit board using solder balls having cores made of a material with a melting temperature higher than the melting temperature of the solder to ensure that in the finished structure the die is parallel to the leadframe or circuit board.... Agent: Advanced Analogic Technologies, Inc.

20130043579 - Power semiconductor arrangement, power semiconductor module with multiple power semiconductor arrangements, and module assembly comprising multiple power semiconductor modules: A power semiconductor arrangement includes a base plate having a molybdenum layer, and a power semiconductor device mounted to a top side of the base plate and electrically and thermally coupled thereto. The base plate includes a metallic mounting base, which is arranged between the semiconductor device and the molybdenum... Agent: Abb Technology Ag

20130043578 - Presspin, power semiconducter module and semiconducter module assembly with multiple power semiconducter modules: A first presspin includes a foot, whereby a base of the foot is provided for contacting a contact element of a power semiconductor device, such as within a power semiconductor module including a base plate and at least one power semiconductor device, which is arranged on the base plate and... Agent: Abb Technology Ag

20130043580 - Diode structure: A diode structure includes a body, a first electrode, and a second electrode. The body has a longitudinal length and a transverse length. The first electrode has an end extending into the body along the longitudinal length, and has another end extending outwardly and horizontally from the body for a... Agent: K. S. Terminals Inc.

20130043581 - Semiconductor device: A semiconductor device includes a wiring substrate, a first semiconductor chip mounted on the wiring substrate, and a second semiconductor chip mounted on the wiring substrate. The second semiconductor chip generates less heat than the first semiconductor chip. A heat dissipation plate is arranged on the wiring substrate and partially... Agent: Shinko Electric Industries Co., Ltd.

20130043582 - Multiple die in a face down package: A microelectronic package includes a subassembly including a first substrate and first and second microelectronic elements having contact-bearing faces facing towards oppositely-facing first and second surfaces of the first substrate and each having contacts electrically connected with the first substrate. The contact-bearing faces of the first and second microelectronic elements... Agent: Tessera, Inc.

20130043583 - Dummy flip chip bumps for reducing stress: A device includes a metal pad over a substrate. A passivation layer includes a portion over the metal pad. A post-passivation interconnect (PPI) is electrically coupled to the metal pad, wherein the PPI comprises a portion over the metal pad and the passivation layer. A polymer layer is over the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130043586 - Method for encapsulating electronic components on a wafer: A method for encapsulating electronic components, including the steps of: forming, in a first surface of a semiconductor wafer, electronic components; forming, on the first surface, an interconnection stack including conductive tracks and vias separated by an insulating material; forming first and second bonding pads on the interconnection stack; thinning... Agent: Stmicroelectronics (tours) Sas

20130043585 - Semiconductor apparatus, method of manufacturing semiconductor apparatus, and electronic apparatus: A semiconductor apparatus, including: a semiconductor component; a Cu stud bump that is formed on the semiconductor component; and a solder bump configured to electrically connect to the Cu stud bump.... Agent: Sony Corporation

20130043584 - Semiconductor devices, package substrates, semiconductor packages, package stack structures, and electronic systems having functionally asymmetric conductive elements: A package stack structure may an upper package include an upper package substrate having a first edge and a second edge opposite to the first edge. The upper package substrate has a first region arranged near the first edge and a second region arranged near the second edge. A first... Agent: Samsung Electronics Co., Ltd.

20130043587 - Package-on-package structures: Embodiments of the present disclosure provide a package on package arrangement comprising a bottom package and a second package. The first package includes a substrate layer including (i) a top side and (ii) a bottom side that is opposite to the top side. Further, the top side defines a substantially... Agent:

20130043588 - Semiconductor dice including at least one blind hole, wafers including such semiconductor dice, and intermediate products made while forming at least one blind hole in a substrate: Semiconductor dice comprise at least one bond pad on an active surface of the semiconductor die. At least one blind hole extends from a back surface of the semiconductor die opposing the active surface, through a thickness of the semiconductor die, to an underside of the at least one bond... Agent: Micron Technology, Inc.

20130043589 - Methods of forming a non-planar cap layer above conductive lines on a semiconductor device: Disclosed herein are various methods of forming methods of forming a non-planar cap layer above a conductive line on a semiconductor device, and to devices incorporating such a non-planar cap layer. In one illustrative example, the method includes forming a conductive structure in a layer of insulating material, recessing an... Agent: Globalfoundries Inc.

20130043590 - Semiconductor structure and method of manufacturing: The present application discloses a method of manufacturing a semiconductor structure. According to at least one embodiment, a first etch stop layer is formed over a conductive feature and a substrate, and the conductive feature is positioned over the substrate. A second etch stop layer is formed over the first... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130043591 - Tungsten metallization: structure and fabrication of same: A local interconnect structure is provided in which a tungsten region, i.e., tungsten stud, that is formed within a middle-of-the-line (MOL) dielectric material is not damaged and/or contaminated during a multiple interconnect patterning process. This is achieved in the present disclosure by forming a self-aligned tungsten nitride passivation layer within... Agent: International Business Machines Corporation

20130043592 - Methods of forming a replacement gate comprised of silicon and a device including same: Disclosed herein are various methods of forming a replacement gate comprised of silicon and various semiconductor devices incorporation such a replacement gate structure. In one example, the method includes removing a sacrificial gate electrode structure to define a gate opening, forming a replacement gate structure in the gate opening, the... Agent: Globalfoundries Inc.

20130043593 - Semiconductor arrangement: A semiconductor arrangement includes a circuit carrier, a bonding wire and at least N half bridge circuits. N is an integer that amounts to at least 1. The circuit carrier includes a first metallization layer, a second metallization layer, an intermediate metallization layer arranged between the first metallization layer and... Agent: Infineon Technologies Ag

20130043594 - Method for manufacturing semiconductor device and semiconductor device: According to one embodiment, between the mounting substrate and the semiconductor chip, there is a joint support layer including a metal or its alloy selected from the group of Cu, Al, Ag, Ni, Cr, Zr and Ti and a melt layer laminated across the joint support layer, and formed of... Agent: Kabushiki Kaisha Toshiba

20130043596 - Semiconductor device: A method of layout of pattern includes the following processes. A graphic data of a first wiring in a first area of a semiconductor wafer is extracted. The first area is a semiconductor chip forming area. The first area is surrounded by a scribed area of the semiconductor wafer. The... Agent: Elpida Memory, Inc.

20130043595 - Semiconductor package containing silicon-on-insulator die mounted in bump-on-leadframe manner to provide low thermal resistance: Thermal transfer from a silicon-on-insulator (SOI) die is improved by mounting the die in a bump-on-leadframe manner in a semiconductor package, with solder or other metal bumps connecting the active layer of the SOI die to metal leads used to mount the package on a printed circuit board or other... Agent: Advanced Analogic Technologies, Inc.

20130043598 - Bond pad structure to reduce bond pad corrosion: Mechanisms of forming a bond pad structure are provided. The bond pad has a recess region, which is formed by an opening in the passivation layer underneath the bond pad. An upper passivation layer covers at least the recess region of the bond pad to reduce trapping of patterning and/or... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130043600 - Bonded semiconductor structures including two or more processed semiconductor structures carried by a common substrate: Methods of forming semiconductor devices include providing a substrate including a layer of semiconductor material on a layer of electrically insulating material. A first metallization layer is formed over a first side of the layer of semiconductor material. Through wafer interconnects are foamed at least partially through the substrate. A... Agent: Soitec

20130043599 - Chip package process and chip package structure: Chip package processes and chip package structures are provided. The chip package structure includes a substrate, a chip, an insulating layer, a third patterned conductive layer and an electronic element. The substrate has a first patterned conductive layer. The chip is disposed on the substrate. A second patterned conductive layer... Agent: Industrial Technology Research Institute

20130043597 - Semiconductor constructions and methods of forming interconnects: Some embodiments include methods of forming interconnects. A first circuitry level may be formed, and a first dielectric region may be formed over such first level. A second level of circuitry may be formed over the first dielectric region. An interconnect may be formed to extend through such second level.... Agent: Micron Technology, Inc.

20130043602 - Method and apparatus of core timing prediction of core logic in the chip-level implementation process through an over-core window on a chip-level routing layer: A method and/or an apparatus of core timing prediction is disclosed. In one embodiment, a method may include generating a core timing model of a core logic that is accurately transferable to any chip-level integration process. The method may reduce performance degradation and/or performance variation of the core logic caused... Agent: Lsi Corporation

20130043601 - Universal printed circuit board and memory card including the same: Disclosed is a memory card which includes a universal PCB including a first pad group and a second pad group, the first and second pad groups being connected to each other via one or more PCB wires, a first semiconductor chip electrically connected with at least one pad of the... Agent:

20130043603 - Method of forming a conductive image on a non-conductive surface: The present invention relates to a method for forming a raised conductive image on a non-conductive or dielectric surface, the method comprising placing a metal coordination complex on a surface of the substrate, exposing the surface to electromagnetic radiation, reducing the exposed complex. removing unexposed complex leaving an elemental metal... Agent:

20130043604 - Semiconductor device and method for manufacturing the same: According to one embodiment, a semiconductor device includes a first insulating layer provided in a first area and in a second area, a line-and-space-like second insulating layer formed on the first insulating layer provided in the first area, and a third insulating layer formed on the first insulating layer provided... Agent:

20130037773 - Ionic devices with interacting species: An ionic device includes a layer (220) of an ionic conductor containing first and second species (222, 224) of impurities. The first species (222) of impurity in the layer (220) is mobile in the ionic conductor, and a concentration profile of the first species (222) determines a functional characteristic of... Agent:

20130037772 - Memory cells: Some embodiments include memory cells. A memory cell may contain a switching region and an ion source region between a pair of electrodes. The switching region may be configured to reversibly retain a conductive bridge, with the memory cell being in a low resistive state when the conductive bridge is... Agent: Micron Technology, Inc.

20130037775 - Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor device incorporating nonvolatile memory element: A nonvolatile memory element of the present invention comprises a first electrode (103), a second electrode (108); a resistance variable layer (107) which is interposed between the first electrode (103) and the second electrode (107) and is configured to switch a resistance value reversibly in response to an electric signal... Agent:

20130037774 - Semiconductor device: A semiconductor device includes a first horizontal molding pattern, a horizontal electrode pattern disposed on the first horizontal molding pattern, and a second horizontal molding pattern disposed on the horizontal electrode pattern. A vertical structure extends through the horizontal patterns. The vertical structure includes a vertical electrode pattern, a data... Agent: Samsung Electronics Co., Ltd.

20130037776 - Variable resistance memory: A variable resistance memory according to an embodiment includes: a first wiring; a second wiring intersecting with the first wiring; a first electrode provided in an intersection region between the first wiring and the second wiring, the first electrode being connected to the first wiring; a second electrode connected to... Agent: Kabushiki Kaisha Toshiba

20130037777 - Non-volatile storage device and method for manufacturing the same: A variable resistance non-volatile storage device includes: a first line which includes a barrier metal layer and a main layer, and fills an inside of a line trench formed in a first interlayer insulating layer; a first electrode covering a top surface of the first line and comprising a precious... Agent:

20130037778 - Device including quantum dots: A method of making a device comprises forming a layer comprising quantum dots over a substrate including a first electrode, fixing the layer comprising quantum dots formed over the substrate, and exposing at least a portion of, and preferably all, exposed surfaces of the fixed layer comprising quantum dots to... Agent:

20130037779 - Nitride semiconductor light-emitting device and method for producing the same: A nitride semiconductor light-emitting device includes an n-type nitride semiconductor layer, a V pit generation layer, an intermediate layer, a multiple quantum well light-emitting layer, and a p-type nitride semiconductor layer provided in this order. The multiple quantum well light-emitting layer is a layer formed by alternately stacking a barrier... Agent: Sharp Kabushiki Kaisha

20130037780 - Apparatus and associated methods: An apparatus including a first layer configured to enable a flow of charge carriers from a source electrode to a drain electrode, a second layer configured to control the density of charge carriers in the first layer using an electric field formed between the first and second layers, and a... Agent: Nokia Corporation

20130037781 - Field-effect transistor and method for manufacturing the same: A field-effect transistor includes a semiconductor layer containing carbon nanomaterials; a first electrode and a second electrode formed in contact with the semiconductor layer; a third electrode for controlling current flowing between the first electrode and the second electrode; and an insulating layer formed between the semiconductor layer and the... Agent: Nec Corporation

20130037782 - Heterocyclic compound and organic light-emitting diode including the same: f

20130037785 - Light emitting element, light emitting device, and electronic device: A light emitting element including an anode, a cathode, a visible light emitting layer which emits visible light and an infrared light emitting layer which emits infrared light installed between the anode and the cathode is provided. Also, it is preferable that the infrared light emitting layer contain a thiadiazole-based... Agent: Seiko Epson Corporation

20130037786 - Nanocomposite, process for preparing the same, and surface emitting device: A nanocomposite including: a matrix including a polyimide; and surface-modified inorganic oxide particles disposed in the matrix, wherein a surface of a particle of the surface-modified inorganic oxide particles is modified with an imide functional group.... Agent: Samsung Electronics Co., Ltd.

20130037790 - Novel 10,10-dialkylanthrone compound and organic light-emitting device including the same: A novel stable 10,10-dialkylanthrone compound is provided.... Agent: Canon Kabushiki Kaisha

20130037788 - Novel m-terphenyl compound and organic light emitting device including the same: An organic light emitting device which includes a m-terphenyl compound having a high T1 energy is provided. In addition, a novel m-terphenyl compound is provided.... Agent: Canon Kabushiki Kaisha

20130037789 - Novel naphthothiophene compound and organic light-emitting device including the same: The present invention provides a novel naphthothiophene compound having a high lowest excited triplet level (T1).... Agent: Canon Kabushiki Kaisha

20130037787 - Organic light emitting device: The invention relates to an organic light-emitting device (OLED) comprising at least: a first electrode (102); a second electrode (105); an organic light emissive layer (104) arranged between said first electrode and said second electrode; and an organic charge transport layer (103) arranged between said first electrode and said emissive... Agent: Konnklijke Philips Electronics, N.v.

20130037792 - Organic light emitting diode display: An organic light emitting diode (OLED) display is disclosed. In one embodiment, the OLED display includes an organic light emitting element formed over a substrate and an encapsulation portion covering the organic light emitting element. Further, the encapsulation portion may include at least one organic layer and at least one... Agent: Samsung Display Co., Ltd.

20130037791 - Organic light-emitting device: An organic light-emitting device that achieves highly efficient emission and low-voltage operation is provided. The organic light-emitting device contains a 9H-xanthen-9-one derivative.... Agent: Canon Kabushiki Kaisha

20130037783 - Organic light-emitting display apparatus and method of manufacturing the same: An organic light-emitting display apparatus is disclosed. In one aspect, the apparatus includes a thin film transistor comprising an active layer, a gate electrode, and source and drain electrodes. The apparatus also includes at least two capacitors each comprising a first electrode having a first region doped with ion impurities... Agent: Samsung Mobile Display Co., Ltd.

20130037784 - Thiadiazole, light-emitting element, light-emitting apparatus, authentication apparatus, and electronic device:

20130037793 - Amorphous oxide semiconductor thin film transistor fabrication method: This disclosure provides systems, methods and apparatus for fabricating thin film transistor devices. In one aspect, a substrate having a source area, a drain area, and a channel area is provided. The substrate also includes an oxide semiconductor layer, a first dielectric layer overlying the channel area of the substrate,... Agent: Qualcomm Mems Technologies, Inc.

20130037799 - Display device including transistor and manufacturing method thereof: An object is to provide a display device which operates stably with use of a transistor having stable electric characteristics. In manufacture of a display device using transistors in which an oxide semiconductor layer is used for a channel formation region, a gate electrode is further provided over at least... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130037801 - Light emitting diode chip: A light emitting diode (LED) chip including: a substrate; and a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, sequentially deposited on the substrate, in which when a length of the substrate is L and a width of the substrate... Agent: Samsung Electronics Co., Ltd.

20130037796 - Light-emitting device and method for manufacturing the same: A light-emitting device includes a first cladding layer, a light-emitting layer, a second cladding layer, an epitaxial structure including an indium-containing oxide, and an electrode unit for supplying external electricity, The electrode unit includes a first electrode disposed to be electrically connected to the first cladding layer, and a second... Agent: Genesis Photonics Inc.

20130037798 - Metal-oxide based thin-film transistors with fluorinated active layer: A thin-film transistor with a fluorinated channel and fluorinated source and drain regions and methods of fabrication are provided. The thin-film transistor includes: a substrate; a semiconductor active layer of fluorine-doped metal-oxide formed on the substrate; fluorine-doped source and drain regions disposed adjacent to the semiconductor active layer; a gate... Agent: The Hong Kong University Of Science And Technology

20130037794 - Pixel array substrate and detecting module: A pixel array substrate including a substrate and a plurality of pixel structures is provided. Each pixel structure includes a patterned metal layer, an insulating layer, a patterned semiconductor layer and a data line layer. The patterned metal layer includes a gate line and a common electrode line. The patterned... Agent: Innocom Technology (shenzhen) Co., Ltd.

20130037795 - Semiconductor device and method for manufacturing the same: An element using a semiconductor layer is formed between wiring layers and, at the same time, a gate electrode is formed using a conductive material other than a material for wirings. A first wiring is embedded in a surface of a first wiring layer. A gate electrode is formed over... Agent: Renesas Electronics Corporation

20130037800 - Semiconductor device, method for fabricating the same, active matrix substrate, and display device: A semiconductor device includes an oxide semiconductor film in which a channel portion is formed and a gate portion arranged to be opposed to the channel portion. A drain portion in which the oxide semiconductor film has been subjected to resistance reduction process and an intermediate area which is provided... Agent:

20130037797 - Thin film device: There is such an issue with a TFT using an oxide semiconductor film that oxygen deficit is generated in a surface region of the oxide semiconductor film after performing plasma etching of a source-drain electrode, and the off-current becomes increased. Disclosed is the TFT which includes: a gate electrode on... Agent: Nlt Technologies, Ltd.

20130037803 - Monitoring pad and semiconductor device including the same: A method of manufacturing a semiconductor device and a semiconductor device package are disclosed. A method of manufacturing a semiconductor device comprises the steps of testing the semiconductor device using at least a first monitoring pad connected to an internal circuit of the semiconductor device via at least a first... Agent:

20130037802 - Semiconductor die assemblies, semiconductor devices including same, and methods of fabrication: Methods of fabricating multi-die assemblies including a base semiconductor die bearing a peripherally encapsulated stack of semiconductor dice of lesser lateral dimensions, the dice vertically connected by conductive elements between the dice, resulting assemblies, and semiconductor devices comprising such assemblies.... Agent: Micron Technology, Inc.

20130037804 - Display device: A display device includes: a base film including plastic; an active layer on the base film, the active layer including a polysilicon layer formed by crystallizing an amorphous silicon layer using a laser; a barrier layer between the active layer and the base film; and a laser absorption layer between... Agent:

20130037805 - Vertical semiconductor device: A technology for a vertical semiconductor device having a RESURF structure, which is capable of preventing the drop of the withstand voltage when the adhesion of external electric charges occurs is provided. The vertical semiconductor device disclosed in the present specification has a cell region and a non-cell region disposed... Agent: Toyota Jidosha Kabushiki Kaisha

20130037809 - Organic thin-film transistor: An organic thin film transistor including at least a gate electrode, a source electrode, a drain electrode, an insulator layer and an organic semiconductor layer, at least one of the source electrode and the drain electrode including a conductive polyaniline composition containing (a) a substituted or unsubstituted polyaniline composite which... Agent:

20130037807 - Semiconductor device and method for manufacturing the same: A semiconductor device (100) according to the present invention includes: a substrate (1); a gate electrode (11) which is arranged on the substrate; a gate insulating layer (12) which has been formed on the gate electrode; an oxide semiconductor layer (13) which has been formed on the gate insulating layer... Agent: Sharp Kabushiki Kaisha

20130037810 - Thin film transistor substrate and method for fabricating the same: The present invention relates to a thin film transistor substrate and method for fabricating the same which can secure an alignment margin and reduce the number of mask steps. A thin transistor substrate according to the present invention includes a gate line and a data line crossing each other to... Agent: Lg Display Co., Ltd.

20130037806 - Thin-film semiconductor device and method of manufacturing the same: A thin-film semiconductor device according to the present disclosure includes: a substrate; a gate electrode formed above the substrate; a gate insulating film formed on the gate electrode; a channel layer that is formed of a polycrystalline semiconductor layer on the gate insulating film; an amorphous semiconductor layer formed on... Agent: Panasonic Corporation

20130037808 - Thin-film transistor device and method for manufacturing thin-film transistor device: A thin-film transistor device which is a bottom-gate thin-film transistor device, includes: a gate electrode formed above a substrate; a gate insulating film formed above the gate electrode; a crystalline silicon thin film formed above the gate insulating film and having a channel region; an amorphous silicon thin film formed... Agent: Panasonic Corporation

20130037813 - Crystallization method of thin film transistor, thin film transistor array panel and manufacturing method for thin film transistor array panel: Exemplary embodiments of the invention disclose a method of manufacturing a thin film transistor array panel having reduced overall processing time and providing a uniform crystallization. Exemplary embodiments of the invention also disclose a crystallization method of a thin film transistor, including forming on a substrate a semiconductor layer including... Agent: Samsung Display Co., Ltd.

20130037815 - Semiconductor device: A semiconductor device (100) includes: a first thin film transistor (105) of a first conductivity type formed on a substrate for each pixel; and a plurality of photosensor sections (200). Each photosensor section (200) includes a photodetecting portion including a thin film diode (202), a capacitor (206) for storing a... Agent:

20130037814 - Thin film transistor, method fabricating thereof, liquid crystal display device and method for fabricating the same: A thin-film transistor array substrate and a fabrication method thereof according to an embodiment of the present invention are disclosed to form an interlayer insulating layer, thereby reducing a failure occurred during the process subsequent to a gate electrode. The thin-film transistor disclosed according to the present invention may include... Agent: Lg Display Co., Ltd.,

20130037812 - Thin-film transistor array substrate, organic light-emitting display including the same and method of manufacturing the same: A thin-film transistor array substrate is disclosed. In one embodiment, the transistor includes a capacitor including a lower electrode disposed on the same layer as an active layer and an upper electrode disposed on the same layer as a gate electrode. The transistor may also include a first insulating layer... Agent: Samsung Mobile Display Co., Ltd.

20130037811 - Transflective liquid crystal display device and method of fabricating the same: An array substrate for a transflective liquid crystal display device includes: a substrate; a gate line and a data line on the substrate, the gate line and the data line crossing each other to define a pixel region including a transmissive area and a reflective area surrounding the transmissive area;... Agent:

20130037816 - Semiconductor device and manufacturing method thereof: A semiconductor device (130) includes: a bonding substrate (100); a thin film element (80) formed on the bonding substrate (100); and a semiconductor element (90) bonded to the bonding substrate (100), the semiconductor element (90) including semiconductor element main body (50) and a plurality of underlying layers (51-54) stacked on... Agent: Sharp Kabushiki Kaisha

20130037817 - Organic light emitting display device and method of manufacturing the same: An organic light-emitting display device includes a plurality of sub-pixels each comprising a light-emitting portion, a thin film transistor (TFT), and a capacitor, each of the sub-pixels emitting a different color, wherein the capacitor of at least one of the plurality of sub-pixels extends into at least one adjacent one... Agent:

20130037818 - Organic light-emitting display device and method of manufacturing the same: An organic light-emitting display device includes a thin film transistor including an active layer, a gate electrode, source/drain electrodes, a first insulating layer between the active layer and the gate electrode, and a second insulating layer over the gate electrode; a pixel electrode on the first insulating layer and the... Agent:

20130037819 - Light emitting device: Disclosed are a light emitting device, a method of manufacturing the light emitting device, a light emitting device package and a lighting system. The light emitting device includes a silicon substrate; a nitride buffer layer on the silicon substrate; and a gallium nitride epitaxial layer on the nitride buffer layer,... Agent:

20130037820 - Nitrogen compound semiconductor light emitting element and manufacturing method thereof: A nitrogen compound semiconductor light emitting element having an n-type layer, an active layer comprising AlGaInN and a p-type layer, emitting ultraviolet radiation with an emission peak wavelength of at most 400 nm and having a high emission intensity as well as a manufacturing method thereof are provided. In the... Agent: Ushio Denki Kabushiki Kaisha

20130037824 - Power semiconductor device: Cell electrodes are provided respectively for cell structures on a semiconductor substrate. The cell electrodes are divided into groups each including two or more cell electrodes. Conductive members are respectively electrically connected to the groups. The conductive members have a used portion and an unused portion. The used portion has... Agent: Sumitomo Electric Industries, Ltd.

20130037823 - Semiconductor device: In one embodiment, a semiconductor device includes a semiconductor substrate, a gate electrode provided on the semiconductor substrate via an insulating layer, and a gate insulator provided on a side surface of the gate electrode. The device includes a stacked layer including a lower main terminal layer of a first... Agent: Kabushiki Kaisha Toshiba

20130037821 - Semiconductor device and manufacturing method thereof: The present invention provides a semiconductor device, comprising: a substrate; shallow trench isolations embedded into the substrate and forming at least one opening area; a channel region located in the opening area; a gate stack comprising a gate dielectric layer and a gate electrode layer and located above the channel... Agent: Institute Of Microelectronics, Chinese Academy Of Science

20130037822 - Semiconductor device and manufacturing method thereof: A semiconductor device and its manufacturing method are provided. The semiconductor device comprises: a semiconductor substrate of a first semiconductor material, a gate structure on the semiconductor substrate, a crystal lattice dislocation line in a channel under the gate structure for generating channel stress, wherein the crystal lattice dislocation line... Agent:

20130037825 - Semiconductor light emitting chip and method for processing substrate: Disclosed is a semiconductor light emitting chip (20) that is composed of: a substrate (10), which has the C plane of a sapphire single crystal as the front surface, and the side surfaces (25, 26) configured of planes that intersect all the planes equivalent to the M plane of the... Agent: Showa Denko K.k.

20130037826 - Led package module and manufacturing method thereof: A light emitting diode (LED) package module and the manufacturing method thereof are presented. A plurality of LEDs and a plurality of semiconductor elements are disposed on a silicon substrate, and then a plurality of lenses is formed above the positions of the plurality of the LEDs, and the plurality... Agent:

20130037829 - Display substrate and method of manufacturing the same: A display substrate includes a base substrate; a first metal pattern disposed on the base substrate and comprising a first signal line and a first electrode electrically connected to the first signal line; and a buffer pattern disposed at a corner between a sidewall surface of the first metal pattern... Agent: Samsung Electronics Co., Ltd.

20130037832 - Foldable display structures: One embodiment provides a structure, comprising: a display; at least one structural component disposed over a portion of the display, wherein the at least on structural component comprises at least one amorphous alloy; and wherein a portion of the display is foldable.... Agent:

20130037830 - Light emitting diode package and method for manufacturing the same: A light emitting diode package includes a heat-dissipating substrate including a reflective groove having a lower bottom surface, an upper opening having a width greater than the lower bottom surface, and an inclined surface formed between the upper opening and the lower bottom surface and mounting grooves, each formed in... Agent: Doosung Advanced Technology Co., Ltd.

20130037834 - Light emitting element module substrate, light emitting element module, and illuminating device: According to an aspect of the invention, there is provided a light emitting element module substrate including: a laminated plate; and a metal layer. The laminated plate includes a base metal plate and an insulating layer provided on the base metal plate. The metal layer is provided on the insulating... Agent: Kabushiki Kaisha Toshiba

20130037827 - Oled light panel with controlled brightness variation: Embodiments may provide a light source with a controlled brightness variation. A first device is provided that includes a substrate and a plurality of OLEDs disposed on the substrate. Each of the OLEDs includes a first electrode, a second electrode, and an organic electroluminescent (EL) material disposed between the first... Agent: Universal Display Corporation

20130037833 - Optical device and method for manufacturing same: The present invention relates to an optical device and a method for manufacturing the same. The technical object of the invention is to realize a surface emitting body which allows heat generated from a light-emitting chip to be easily dissipated, eliminates the need for an additional wiring layer, and allows... Agent: Point Engineering Co., Ltd.

20130037831 - Opto-electronic module and method for manufacturing the same: A method for manufacturing a device that includes an opto-electronic module includes creating a wafer stack including multiple active optical components mounted on a substrate wafer, and an optics wafer including multiple passive optical components. The optics wafer can include a blocking portion, which is substantially non-transparent for at least... Agent: Heptagon Micro Optics Pte. Ltd.

20130037828 - Organic light-emitting display and method of manufacturing the same: An organic light-emitting display and a method of manufacturing the organic light-emitting display are disclosed. In one embodiment, the organic light-emitting display includes: i) a pixel electrode disposed on a substrate, ii) an opposite electrode disposed opposite to the pixel electrode, iii) an organic emission layer disposed between the pixel... Agent: Samsung Mobile Display Co., Ltd.

20130037835 - Display device with reinforced power lines: A display device is provided with a reinforced power line. The display device includes a common power line. A light emission layer is interposed between a first and a second electrode. A passivation layer is formed over the second electrode and has a stepped shape. An auxiliary metal layer is... Agent: Lg Display Co. Ltd.

20130037836 - Light emitting device and method for fabricating the same: A light emitting device that includes a conductive substrate, an insulating layer on the conductive substrate, a plurality of light emitting device cells on the insulating layer, a connection layer electrically interconnecting the light emitting device cells, a first contact section electrically connecting the conductive substrate with at least one... Agent: Lg Innotek Co., Ltd

20130037840 - Epoxy resin composition for optical semiconductor device and optical semiconductor device using the same: The present invention relates to an epoxy resin composition for an optical semiconductor device having an optical semiconductor element mounting region and having a reflector that surrounds at least a part of the region, the epoxy resin composition being an epoxy resin composition for forming the reflector, the epoxy resin... Agent: Nitto Denko Corporation

20130037845 - Lead frame, and light emitting diode module having the same: A light emitting diode (LED) module includes a lead frame having a number (N) of conducting arms spaced apart from each other, where N≧3, and at least one LED die mounted on one of any two neighbor conducting arms. Any two neighbor conducting arms are electrically coupled each other.... Agent: Lite-on Electronics (guangzhou) Limited

20130037842 - Light emitting device and method for manufacturing light emitting device: A light emitting device (100) includes a base member (101), electrically conductive members (102a, 102b) disposed on the base member (101), a light emitting element (104) mounted on the electrically conductive members (102a, 102b), an insulating filler (114) covering at least a portion of surfaces of the electrically conductive members... Agent:

20130037843 - Light emitting transistor: A light emitting transistor of the present invention has a light emitting layer, both a source electrode and a drain electrode both of which are connected with the light emitting layer electrically, an insulation layer arranged on the light emitting layer, a gate electrode arranged on the insulation layer. The... Agent:

20130037844 - Light-emitting device and method for manufacturing same: A light-emitting device (100) is provided with a metal part (2) atop a planar LED substrate (1), and an LED element (3) is disposed atop the metal part (2). A glass substrate (5) is provided to an upper surface of the LED element (3), and a wavelength conversion part (6)... Agent:

20130037838 - Method and apparatus for coupling light-emitting elements with light-converting material: Light-emitting elements such as LEDs are associated with light-converting material such as phosphor and/or other material. A donor substrate comprising the light-converting and/or other material is suitably placed relative to a target substrate associated with the light-emitting elements. A laser or other energy source is then used to transfer the... Agent: Quarkstar LLC

20130037837 - Miniature leadless surface mount lamp with dome and reflector cup: A package for a light source is disclosed. In particular, a Plastic Leaded Chip Carrier (PLCC) is described which provides many features offered by traditional surface mount technology lamps, but also has a decreased height, increased light output, and enables a smaller viewing angle as compared to traditional surface mount... Agent: Avago Technologies EcbuIP(singapore) Pte. Ltd.

20130037846 - Red light emitting phosphor, method for manufacturing the same and light emitting apparatus employing red light emitting phosphor: The present invention relates to a divalent europium-activated nitride red light emitting phosphor substantially represented by a general formula: (MI1-xEux)MIISiN3 (1) (in the formula (1), MI is an alkaline-earth metal element and represents at least one element selected from the group consisting of Mg, Ca, Sr, and Ba; MII is... Agent: Sharp Kabushiki Kaisha

20130037841 - Semiconductor light emitting device: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a substrate; a light emitting structure comprising a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer on the substrate; an electrode layer on the second conductive semiconductor layer; and an electrode on... Agent:

20130037839 - Semiconductor light emitting element: A semiconductor light emitting element of the present invention includes a support substrate, a semiconductor film including a light emitting layer, a surface electrode provided on the surface on a light-extraction-surface side of the semiconductor film, and a light reflecting layer. The surface electrode includes first electrode pieces that form... Agent: Stanley Electric Co.

20130037847 - Layered substrate, light-emitting diode including the layered substrate and lighting device using the light-emitting diode: A layered substrate includes a first substrate including an upper surface, a lower surface, a peripheral surface between peripheral edges of the upper surface and the lower surface, and a cut portion cut into the peripheral surface and passing through the upper surface and the lower surface, and a second... Agent: Citizen Electronics Co., Ltd.

20130037848 - Light emitting device and light emitting device package having the same: Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, a first electrode disposed in an opening portion of... Agent:

20130037849 - Vertical structure led device and method of manufacturing the same: A method of manufacturing a vertical structure light emitting diode device, the method including: sequentially forming a first conductivity type III-V group compound semiconductor layer, an active layer, and a second conductivity type III-V group compound semiconductor layer on a substrate for growth; bonding a conductive substrate to the second... Agent: Samsung Electronics

20130037850 - Semiconductor light-emitting element, protective film of semiconductor light-emitting element, and method for fabricating same: Disclosed are: a semiconductor light-emitting element that fulfills all of having high migration prevention, high transmittance, and low film-production cost; the protective film of the semiconductor light-emitting element; and a method for fabricating same. To this end, in the semiconductor light-emitting element-which has: a plurality of semiconductor layers (12-14) formed... Agent: Mitsubishi Heavy Industries, Ltd.

20130037852 - Power mosfet, an igbt, and a power diode: Super-junction MOSFETs by trench fill system requires void-free filling epitaxial growth. This may require alignment of plane orientations of trenches in a given direction. Particularly, when column layout at chip corner part is bilaterally asymmetrical with a diagonal line between chip corners, equipotential lines in a blocking state are curved... Agent: Renesas Electronics Corporation

20130037851 - Semiconductor device: A semiconductor device including a base semiconductor layer of a first conductivity type, a cell portion including a diffusion region of a second conductivity type formed on a surface of the base semiconductor layer, a plurality of guard ring semiconductor layers of the second conductivity type formed on the surface... Agent: Kabushiki Kaisha Toshiba

20130037853 - Semiconductor device: A semiconductor device includes a stripe-shaped gate trench formed in one major surface of n-type drift layer, a gate trench including gate polysilicon formed therein, and a gate polysilicon connected to a gate electrode. A p-type base layer is formed selectively in mesa region between adjacent gate trenches and a... Agent: Fuji Electric Co., Ltd.

20130037854 - Photodetector: A photodetector is provided, comprising: a radiation-absorbing semiconductor region and a collection semiconductor region separated by and each in contact with a barrier semiconductor region; wherein, at least in the absence of an applied bias voltage, the band gap between the valence band energy and the conduction band energy of... Agent: Bah Holdings LLC

20130037855 - Si-ge laminated thin film and infrared sensor using same: Provided is a Si—Ge laminated thin film including at least one Si layer and at least one Ge layer, which are alternately laminated on a substrate (1). A Si layer (31) and a Ge layer (22) each have a thickness in a range of 5 to 500 nm. The Si... Agent: Nec Corporation

20130037857 - Dislocation and stress management by mask-less processes using substrate patterning and methods for device fabrication: Structures and methods for producing active layer stacks of lattice matched, lattice mismatched and thermally mismatched semiconductor materials, with low threading dislocation densities, no layer cracking and minimized wafer bowing, by using epitaxial growth onto elevated substrate regions in a mask-less process.... Agent:

20130037856 - Semiconductor device and manufacturing method thereof: This invention relates to a semiconductor device and a manufacturing method therefor for reducing stacking faults caused by high content of Ge in an embedded SiGe structure. The semiconductor device comprises a Si substrate with a recess formed therein. A SiGe seed layer is formed on sidewalls of the recess,... Agent: Semiconductor Manufacturing International (beijing) Corporation

20130037858 - Semiconductor device and manufacturing method thereof: This invention relates to a semiconductor device and a manufacturing method thereof for reducing stacking faults caused by high content of Ge in an embedded SiGe structure. The semiconductor device comprises a Si substrate with a recess formed therein. A first SiGe layer having a Ge content gradually increased from... Agent: Semiconductor Manufacturing International (beijing) Corporation

20130037859 - Semiconductor device and programming method thereof: A semiconductor device and a method for programming the same are provided. The semiconductor device comprises: a semiconductor substrate with an interconnect formed therein; a Through-Silicon Via (TSV) penetrating through the semiconductor substrate; and a programmable device which can be switched between on and off states, the TSV being connected... Agent:

20130037860 - 3d memory array: A 3-D memory is provided. Each word line layer has word lines and gaps alternately arranged along a first direction. Gaps include first group and second group of gaps alternately arranged. A first bit line layer is on word line layers and has first bit lines along a second direction.... Agent: Winbond Electronics Corp.

20130037861 - Image sensor for semiconductor light-sensitive device, manufacturing method thereof, image processing apparatus using the same, and method for detecting color signal: An image sensor for a semiconductor light-sensitive device including a semiconductor substrate and a light receiving device configured to receive light and generate a signal from the light. The image sensor may include an electron collecting device formed in the semiconductor substrate to receive at least a portion of the... Agent: Dongbu Hitek Co., Ltd.

20130037862 - Magnetic random access memory: According to one embodiment, a magnetic random access memory includes a plurality of magnetoresistance elements. The plurality of magnetoresistance elements each include a recording layer having magnetic anisotropy perpendicular to a film surface, and a variable magnetization direction, a reference layer having magnetic anisotropy perpendicular to a film surface, and... Agent: Kabushiki Kaisha Toshiba

20130037863 - Mechanisms for forming ultra shallow junction: The embodiments of methods and structures are for doping fin structures by plasma doping processes to enable formation of shallow lightly doped source and drain (LDD) regions. The methods involve a two-step plasma doping process. The first step plasma process uses a heavy carrier gas, such as a carrier gas... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130037864 - Cross-coupling of gate conductor line and active region in semiconductor devices: Cross-coupling between a gate conductor and an active region of a semiconductor substrate is provided by forming a gate dielectric layer on the semiconductor substrate and lithographically patterning the gate dielectric layer to form opening therein over a portion of the active region at which electrical contact with the gate... Agent: International Business Machines Corporation

20130037866 - Method of forming a semiconductor device: A method for forming a semiconductor device includes providing a substrate and depositing a gate stack having a side periphery on the substrate. A first liner dielectric layer is deposited on the substrate and the gate stack. A first spacer dielectric layer is deposited on the first liner dielectric layer.... Agent: Globalfoundries Inc.

20130037869 - Semiconductor device and manufacturing method of semiconductor device: According to one embodiment, a manufacturing method of a semiconductor device includes a step of forming a dummy-fin semiconductor on a semiconductor substrate; a step of forming an insulating layer, into which a lower part of the dummy-fin semiconductor is buried, on the semiconductor substrate; a step of forming a... Agent: Kabushiki Kaisha Toshiba

20130037867 - Semiconductor device and manufacturing method thereof: According to one embodiment, a semiconductor device includes a substrate, a gate electrode, a channel region, a source region and a drain region. The source region forms a first boundary with the channel region, and the drain region forms a second boundary with the channel region. A side of the... Agent: Kabushiki Kaisha Toshiba

20130037868 - Semiconductor device and method of manufacturing the same: A semiconductor device includes: a first nitride semiconductor layer; a second nitride semiconductor layer formed over the first nitride semiconductor layer; and a gate electrode facing the second nitride semiconductor layer via a gate insulating film. Because the second nitride semiconductor layer is formed by stacking plural semiconductor layers with... Agent: Renesas Electronics Corporation

20130037870 - Semiconductor device, and manufacturing method for same: Disclosed is a manufacturing method for a semiconductor device that prevents excessive etching of a conductive layer, even if the section where a conductive layer contact hole is formed is etched a plurality of times. A light-shielding film 20 is formed on a substrate 30. A buffer film 21, a... Agent: Sharp Kabushiki Kaisha

20130037865 - Semiconductor structure having a wetting layer: A semiconductor structure which includes a semiconductor substrate and a metal gate structure formed in a trench or via on the semiconductor substrate. The metal gate structure includes a gate dielectric; a wetting layer selected from the group consisting of cobalt and nickel on the gate dielectric lining the trench... Agent: International Business Machines Corporation

20130037871 - Integrated circuit device and method for manufacturing same: An integrated circuit device includes a plurality of fins on an upper surface of a semiconductor substrate and extending in a first direction, a device isolation insulating film placed between the fins, a gate electrode extending in a second direction crossing the first direction on the insulating film; and an... Agent: Kabushiki Kaisha Toshiba

20130037872 - Method for fabricating a damascene self-aligned ferroelectric random access memory (f-ram) having a ferroelectric capacitor aligned with a three dimensional transistor structure: Disclosed is a non-volatile, ferroelectric random access memory (F-RAM) device and a method for fabricating a damascene self-aligned F-RAM that allows for the formation of a ferroelectric capacitor with separated PZT layers aligned with a preexisting, three dimensional (3-D) transistor structure.... Agent: Ramtron International Corporation

20130037873 - Film forming method, manufacturing method of semiconductor device using the same, film forming apparatus, and semiconductor device: Provided is a semiconductor device capable of preventing destruction of an electrode having a pillar shape and densely arranged. The semiconductor device having a field-effect transistor and a capacitor having a pillar shape, the semiconductor device includes: a first electrode having a pillar shape and electrically connected to an impurity... Agent: Tokyo Electron Limited

20130037874 - Nonvolatile memory cell, nonvolatile memory device and method for driving the same: A nonvolatile memory cell is able to reduce the size per the unit area by employing a dual gate structure where the chalcogenide compound is used for a channel. The nonvolatile memory cell includes a phase-change layer, a first and a second gate that are in contact with sides of... Agent:

20130037875 - Semiconductor memory device including multi-layer gate structure: A semiconductor memory device includes a first select transistor, first stepped portion, and a first contact plug. The first select transistor is formed on a side of an upper surface of a substrate and has a first multi-layer gate. The first stepped portion is formed by etching the substrate adjacent... Agent:

20130037876 - Semiconductor device: According to one embodiment, a semiconductor device includes a polysilicon film formed above a semiconductor substrate, and a silicide film of a metal formed on the polysilicon film. The semiconductor device of the embodiment includes an oxide film of the metal formed above the silicide film, and a film containing... Agent: Kabushiki Kaisha Toshiba

20130037877 - Double gated flash memory: A split gate memory cell is fabricated with a fin structure between a memory gate stack and a select gate. Embodiments include a first channel region under the memory gate stack and a second channel region under the select gate.... Agent: Globalfoundries Singapore Pte. Ltd.

20130037878 - Vdmos device and method for fabricating the same: A method for fabricating VDMOS devices includes providing a semiconductor substrate; forming a first N-type epitaxial layer on the semiconductor substrate; forming a hard mask layer with an opening on the first N-type epitaxial layer; etching the first N-type epitaxial layer along the opening until the semiconductor substrate is exposed,... Agent: Csmc Technologies Fab1 Co., Ltd.

20130037881 - Semiconductor device with vertical gate and method of manufacturing the same: A gate electrode is formed in a trench reaching a drain region so as to leave a concave portion on the top of the trench. A first insulating film is formed, which fills the concave portion and of which the thickness increases as the distance from an end of the... Agent: Panasonic Corporation

20130037880 - Trench-gate metal oxide semiconductor device and fabricating method thereof: A trench-gate metal oxide semiconductor device includes a substrate, a first gate dielectric layer, a first gate electrode and a first source/drain structure. The substrate has a first doping region, a second doping region and at least one trench. A P/N junction is formed between the first doping region and... Agent: United Microelectronics Corporation

20130037879 - Vertical devices and methods of forming: Vertical devices and methods of forming the same are provided. One example method of forming a vertical device can include forming a trench in a semiconductor structure, and partially filling the trench with an insulator material. A dielectric material is formed over the insulator material. The dielectric material is modified... Agent: Micron Technology, Inc.

20130037882 - Semiconductor device: A semiconductor device includes a semiconductor substrate including an active region defined by a device isolation layer, a trench extending across the active region, a buried gate filling a part of the trench and including a base portion, a first extension portion, and a second extension portion extending along an... Agent:

20130037883 - Ldpmos structure for enhancing breakdown voltage and specific on resistance in bicmos-dmos process: An LDPMOS structure having enhanced breakdown voltage and specific on-resistance is described, as is a method for fabricating the structure. A P-field implanted layer formed in a drift region of the structure and surrounding a tightly doped drain region effectively increases breakdown voltage while maintaining a relatively low specific on-resistance.... Agent: Macronix International Co., Ltd.

20130037884 - Nonvolatile memory and electronic apparatus: An active region, a source region, and a drain region are formed on a single crystal semiconductor substrate or a single crystal semiconductor thin film. Impurity regions called pinning regions are formed in striped form in the active region so as to reach both of the source region and the... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130037885 - Semiconductor-on-insulator (soi) structures including gradient nitrided buried oxide (box): A semiconductor-on-insulator structure includes a buried dielectric layer interposed between a base semiconductor substrate and a surface semiconductor layer. The buried dielectric layer comprises an oxide material that includes a nitrogen gradient that peaks at the interface of the buried dielectric layer with at least one of the base semiconductor... Agent: International Business Machines Corporation

20130037886 - Semiconductor device and method of making the same: A semiconductor device includes a semiconductor substrate, at least a first fin structure, at least a second fin structure, a first gate, a second gate, a first source/drain region and a second source/drain region. The semiconductor substrate has at least a first active region to dispose the first fin structure... Agent:

20130037887 - Semiconductor device: According to one embodiment, a semiconductor device includes a source region having p-type conductivity, a drain region having p-type conductivity, a channel region provided between the source region and the drain region and having n-type conductivity, a lower gate insulating film provided on the channel region, a lower gate electrode... Agent: Kabushiki Kaisha Toshiba

20130037888 - Semiconductor device: A semiconductor device includes an active region defined by a device isolation layer and including first and second sections or regions, a gate electrode extending in a first direction across the active region over a channel between the first region and the second region and including at least one first... Agent: Samsung Electronics Co., Ltd.

20130037890 - Multiple gate dielectric structures and methods of forming the same: The present disclosure provides for multiple gate dielectric semiconductor structures and methods of forming such structures. In one embodiment, a method of forming a semiconductor structure includes providing a substrate including a pixel array region, an input/output (I/O) region, and a core region. The method further includes forming a first... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130037889 - Semiconductor structure and fabricating method thereof: A fabricating method of semiconductor structure is provided. First, a substrate with a dielectric layer formed thereon is provided. The dielectric layer has a first opening and a second opening exposing a portion of the substrate. Further, a gate dielectric layer including a high-k dielectric layer and a barrier layer... Agent: United Microelectronics Corp.

20130037891 - Mems device and method of formation thereof: The present disclosure provides a method including providing a first substrate; and forming a microelectromechanical system (MEMS) device on a first surface of the first substrate. A bond pad is formed on at least one bonding site on the first surface of the first substrate. The bonding site is recessed... Agent: Taiwan Semiconductor Manufacturing Company, Ltd., ("tsmc")

20130037897 - Method for fabricating a damascene self-aligned ferroelectric random access memory (f-ram) device structure employing reduced processing steps: Disclosed is a novel non-volatile, ferroelectric random access memory (F-RAM) device and a method for fabricating a damascene self-aligned F-RAM device structure on a planar surface using a reduced number of masks and etching steps.... Agent: Ramtron International Corporation

20130037894 - Method for fabricating magnetic tunnel junction: In a method for fabricating a magnetic tunnel junction, a fixed layer, a tunnel insulating layer, a free layer, and an anti-etch layer are formed on a substrate. A sacrificial layer having a hole is formed on the anti-etch layer. An upper electrode is buried in the hole. The sacrificial... Agent:

20130037895 - Method for fabricating semiconductor device: In a method for fabricating a semiconductor device, a conductive layer is formed on a substrate, where the substrate has a bottom layer formed thereon. A magnetic tunnel junction layer is formed on the conductive layer. The magnetic tunnel junction layer is patterned using an etching gas containing oxygen. An... Agent:

20130037892 - Semicondcutor device and method for fabricating the same: A semiconductor device includes a pinned layer having a magnetic direction permanently set to a first direction, a tunnel insulating layer arranged on the pinned layer, a free layer arranged on the tunnel insulating layer and having a changeable magnetic direction, and a magnetic induction layer formed to surround the... Agent:

20130037893 - Semiconductor device: A semiconductor device includes a first free layer having a magnetic direction that changes according to a direction and an amount of a first current, a first tunnel insulating layer arranged on the first free layer, a pinned layer, arranged on the first tunnel insulating layer, having a magnetic direction... Agent:

20130037896 - Semiconductor device and method for fabricating the same: A method for fabricating a semiconductor device includes forming a magnetic tunnel junction (MTJ) element on a substrate, forming a first capping layer along the shape of the MTJ element, forming an insulating layer on the first capping layer, forming a trench exposing a portion of the first capping layer... Agent:

20130037898 - Memory array including magnetic random access memory cells and oblique field lines: A memory device includes a first plurality of magnetic random access memory (MRAM) cells positioned along a first direction, and a first bit line electrically connected to the first plurality of MRAM cells, the bit line oriented in the first direction. The device includes a first plurality of field lines... Agent: Crocus Technology, Inc.

20130037899 - Semiconductor structure for photon detection: A semiconductor structure for photon detection, comprising a substrate composed of a semiconductor material having a first doping, a contact region fitted at the frontside of the substrate, a bias layer composed of a semiconductor material having a second doping, which is arranged on the backside of the substrate at... Agent: Espros Photonics Ag

20130037901 - Photoelectric conversion device: It is an object to provide a photoelectric conversion device with high photoelectric conversion efficiency that improves reliability by increasing contact force between a light absorbing layer and an electrode layer. The photoelectric conversion device includes an electrode layer, and a light absorbing layer located on the electrode layer. The... Agent: Kyocera Corporation

20130037900 - Solid-state imaging element, manufacturing method, and electronic device: A solid-state imaging element includes a pixel having a photoelectric conversion section and a side pinning layer. The photoelectric conversion section is formed in a semiconductor substrate. The side pinning layer is formed on a side of the photoelectric conversion section. The side pinning layer is formed by performing ion... Agent: Sony Corporation

20130037902 - Image sensing device, image sensing system, and method for manufacturing image sensing device: An image sensing device includes a light-shielding film having transit portions, a first film and a second film. The second film comprises a first layer having a different refractive index from the first film. The first layer lies within at least the transit portions, and forms interfaces with the first... Agent: Canon Kabushiki Kaisha

20130037903 - Display device: Disclosed is a display device that is configured such that light that is emitted from a backlight or the like and that illuminates a display panel is prevented from being transmitted through a light-shielding layer that is provided between a light sensor element and a substrate. A liquid crystal display... Agent: Sharp Kabushiki Kaisha

20130037904 - Ptc element and heating-element module: The object is achieved with a PTC element including at least two metal electrodes and a BaTiO3 system semiconductor ceramic composition arranged between the electrodes, in which, in the semiconductor ceramic composition, a portion of Ba in the BaTiO3 system is substituted by Bi—Na and a semiconductorizing element, vacancies are... Agent: Hitachi Metals, Ltd.

20130037905 - Hybrid substrateless device with enhanced tuning efficiency: In a hybrid integrated module, a semiconductor die is mechanically coupled face-to-face to an integrated device in which the substrate has been removed. For example, the integrated circuit may include an optical device fabricated on a silicon-on-insulator (SOI) wafer in which the backside silicon handler has been completely removed, thereby... Agent: Oracle International Corporation

20130037907 - Optoelectronic integrated circuit substrate and method of fabricating the same: An optoelectronic integrated circuit substrate may include a first region and a second region. The first region and the second region each include at least two buried insulation layers having different thicknesses. The at least two buried insulation layers of the first region are formed at a greater depth and... Agent: Samsung Electronics Co., Ltd.

20130037906 - Semiconductor device and a method for forming a semiconductor device: A semiconductor device having a semiconductor die is provided. The semiconductor die includes a main horizontal surface, an outer edge, an active area, and a peripheral area. The peripheral area includes a dielectric structure surrounding the active area and extending from the main horizontal surface into the semiconductor die. The... Agent: Infineon Technologies Austria Ag

20130037908 - Galvanic isolation fuse and method of forming the fuse: The spikes in current and voltage that result from the failure of a galvanic dielectric layer are safely contained by a galvanic isolation fuse that pops and forms and open circuit between a high-voltage die and a low-voltage die in response to the failure of the galvanic dielectric layer.... Agent:

20130037911 - Chip-component structure and method of producing same: In a chip-component structure, a monolithic ceramic capacitor is a structure including a predetermined number of substantially flat internal electrodes stacked on each other. An interposer includes a substrate larger than the outer shape of the monolithic ceramic capacitor. The substrate includes a first major surface on which first front... Agent: Murata Manufacturing Co., Ltd.

20130037910 - Decoupling mim capacitor designs for interposers and methods of manufacture thereof: Decoupling metal-insulator-metal (MIM) capacitor designs for interposers and methods of manufacture thereof are disclosed. In one embodiment, a method of forming a decoupling capacitor includes providing a packaging device, and forming a decoupling MIM capacitor in at least two metallization layers of the packaging device.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130037913 - Inexpensive electrode materials to facilitate rutile phase titanium oxide: This disclosure provides a method of fabricating a semiconductor stack and associated device, such as a capacitor and DRAM cell. In particular, a bottom electrode has a material selected for lattice matching characteristics. This material may be created from a relatively inexpensive metal oxide which is processed to adopt a... Agent: Intermolecular Inc.

20130037912 - Method for fabricating a damascene self-aligned ferroelectric random access memory (f-ram) with simultaneous formation of sidewall ferroelectric capacitors: Disclosed is a non-volatile, ferroelectric random access memory (F-RAM) device and a method for fabricating the same in the form of a damascene self-aligned F-RAM device comprising a PZT capacitor built on the sidewalls of an oxide trench, while allowing for the simultaneous formation of two ferroelectric sidewall capacitors.... Agent: Ramtron International Corporation

20130037909 - Semiconductor structure with galvanic isolation: Galvanic isolation between a high-voltage die and a low-voltage die in a multi-die chip is provided by a galvanic isolation die that physically supports the high-voltage die and the low-voltage die, and provides capacitive structures with high breakdown voltages that allow the high-voltage die to capacitively communicate with the low-voltage... Agent:

20130037914 - Novel structure of npn-bjt for improving punch through between collector and emitter: A bipolar junction transistor and a manufacturing method for the same are provided. The bipolar junction transistor includes a well region, an emitter electrode, a base electrode, a collector electrode, and a conductive layer. The emitter electrode, the base electrode and the collector electrode are separated from each other by... Agent: Macronix International Co., Ltd.

20130037915 - Method and apparatus for providing a layout defining a structure to be patterned onto a substrate: A method provides a layout defining a structure to be patterned onto a substrate. The structure is registered with a predefined grid of the layout. The method includes locally stretching the grid in a first portion of a layout causing a problematic spot on the substrate.... Agent: Infineon Technologies Ag

20130037916 - Break pattern of silicon wafer, silicon wafer, and silicon substrate: A break pattern of a silicon wafer includes a line to be cut which is set in the silicon wafer assuming a surface as a (110) face in a surface direction of a first (111) face perpendicular to the (110) face; and through holes which are provided in a plurality... Agent: Seiko Epson Corporation

20130037917 - Wafer level chip scale package with thick bottom metal exposed and preparation method thereof: A method for forming a wafer level chip scale (WLCS) package device with a thick bottom metal comprising the step of attaching a lead frame comprising a plurality of thick bottom metals onto a back metal layer of a semiconductor wafer including a plurality of semiconductor chips having a plurality... Agent:

20130037919 - Methods of forming trenches in silicon and a semiconductor device including same: A method of creating a trench having a portion of a bulb-shaped cross-section in silicon is disclosed. The method comprises forming at least one trench in silicon and forming a liner in the at least one trench. The liner is removed from a bottom surface of the at least one... Agent: Micron Technology, Inc.

20130037918 - Semiconductor structure and manufacturing method thereof: A semiconductor structure is provided in the present invention. The semiconductor structure includes a substrate, a first material layer and a second material layer. A trench region is defined on the substrate. The trench region includes two separated first regions and a second region, wherein the second region is adjacent... Agent:

20130037920 - Silicon epitaxial wafer and method for manufacturing the same: The present invention includes a method for manufacturing a silicon epitaxial wafer having a silicon homoepitaxial layer formed on a surface of a silicon single crystal wafer, including the steps of: preparing the silicon single crystal wafer such that a plane orientation of the silicon single crystal wafer is tilted... Agent: Shin-etsu Handotai Co., Ltd.

20130037921 - Resist underlayer composition and process of producing integrated circuit devices using same: A resist underlayer composition, including a solvent, and an organosilane condensation polymerization product of hydrolyzed products produced from a compound represented by Chemical Formula 1, a compound represented by Chemical Formula 2, and a compound represented by Chemical Formula 3.... Agent:

20130037922 - Trap rich layer with through-silicon-vias in semiconductor devices: An integrated circuit chip is formed with a circuit layer, a trap rich layer and through-semiconductor-vias. The trap rich layer is formed above the circuit layer. The through-semiconductor-vias are also formed above the circuit layer. In some embodiments, the circuit layer is included in a wafer, and the trap rich... Agent: Io Semiconductor, Inc.

20130037923 - Semiconductor package and method of manufacturing the same: There are provided a semiconductor package capable including an electromagnetic wave shielding structure having excellent electromagnetic interference (EMI) shielding characteristics while protecting individual elements therein from impacts, and a method of manufacturing the same. The semiconductor package includes: a substrate having ground electrodes formed on an upper surface thereof; at... Agent:

20130037924 - Antenna switch modules and methods of making the same: Antenna switch modules and methods of making the same are provided. In certain implementations, an antenna switch module includes a package substrate, an integrated filter, and a silicon on insulator (SOI) die attached to the package substrate. The SOI die includes a capacitor configured to operate in the integrated filter... Agent: Skyworks Solutions, Inc.

20130037925 - Area array qfn: A microelectronic assembly can include a microelectronic element and a lead frame having a first unit and a second unit overlying the first unit and assembled therewith. The first unit can have a first metal layer comprising a portion of the thickness of the lead frame and including terminals and... Agent: Tessera, Inc.

20130037926 - Lead assembly for a flip-chip power switch: A power switch assembly includes a flip-chip type integrated circuit chip and a lead-frame with a plurality of spaced apart parallel lead sections. The flip-chip type integrated circuit chip includes a distributed transistor, and first and second pluralities of flip-chip interconnects connected to source and drain regions, respectively. The first... Agent:

20130037927 - Lead carrier with multi-material print formed package components: A lead carrier provides support for a semiconductor device during manufacture. The lead carrier includes a temporary support member with multiple package sites. Each site includes a die attach pad surrounded by terminal pads. The pads are formed of multiple materials including a lower layer and a body portion. An... Agent:

20130037928 - Semiconductor package and system: A semiconductor package includes a package board, a pellet provided over the package board, and a protection member covering the package board and the pellet and including a hole penetrating the protection member.... Agent: Renesas Electronics Corporation

20130037930 - Semiconductor chip and semiconductor package having the same: A semiconductor chip includes a body part having a first surface and a second surface facing away from the first surface, and an opening passing from the first surface to the second surface of the body part.... Agent: Hynix Semiconductor Inc.

20130037929 - Stackable wafer level packages and related methods: The present semiconductor device packages include a die, a redistribution layer and a plurality of conductive pillars electrically connected to the redistribution layer. A molding compound partially encapsulates the die and the pillars. A plurality of interconnect patterns on the molding compound are electrically connected to the pillars. The interconnect... Agent:

20130037931 - Semiconductor package with a heat spreader and method of making: An apparatus and method of forming a semiconductor package includes having and applying, respectively, a thermal interface material on a semiconductor die. The semiconductor die is included on a die assembly. The semiconductor die is installed in a heat spreader. The heat spreader is at least partially filled with mold... Agent:

20130037932 - Flange for semiconductor die: A semiconductor package includes a curved body and a plurality of semiconductor die. The curved body includes first and second opposing end regions and an intermediate center region. The curved body has a first inflection point at the center region, a second inflection point at the first end region and... Agent: Infineon Technologies Ag

20130037937 - Bump pad structure: A bump pad structure for a semiconductor package is disclosed. A bump pad structure includes a conductive pad disposed on an insulating layer. A ring-shaped conductive layer is embedded in the insulating layer and is substantially under and along an edge of the conductive pad. At least one conductive via... Agent: Mediatek Inc.

20130037944 - Chip stack packages having aligned through silicon vias of different areas: A chip stack package includes a first semiconductor chip, a second semiconductor chip and a third semiconductor chip. The first semiconductor chip includes a first through silicon via that extends through the first semiconductor chip. The second semiconductor chip is stacked on the first semiconductor chip, and includes a second... Agent: Samsung Electronics Co., Ltd.

20130037938 - Embedded package and method for manufacturing the same: An embedded package includes a semiconductor chip divided into a cell region and a peripheral region, having a first surface and a second surface which faces away from the first surface, and including an integrated circuit which is formed in the cell region on the first surface, a bonding pad... Agent: Hynix Semiconductor Inc.

20130037934 - Integrated circuit chip with reduced ir drop: An integrated circuit chip includes a power/ground interconnection network in a topmost metal layer over a semiconductor substrate and at least a bump pad on/over the power/ground interconnection network. The power/ground mesh interconnection network includes a first power/ground line connected to the bump pad and extending along a first direction,... Agent:

20130037940 - Method for inhibiting growth of intermetallic compounds: The present invention relates to a method for inhibiting growth of intermetallic compounds, comprising the steps of: (i) preparing a substrate element including a substrate on which at least one layer of metal pad is deposited, wherein at least one thin layer of solder is deposited onto the layer of... Agent: National Chiao Tung University

20130037946 - Semiconductor chip including bump having barrier layer, and manufacturing method thereof: A semiconductor chip includes a first substrate including a first surface and a second surface, a through-via plug passing through the first substrate, and a first conduction layer connected to an end of the through-via plug on the first surface, and a first bump including a first barrier layer on... Agent: Foundation Seoul Technopark

20130037942 - Semiconductor chips having a dual-layered structure, packages having the same, and methods of fabricating the semiconductor chips and the packages: Dual-layered structural semiconductor chips are provided. The semiconductor chip includes a first semiconductor chip and a second semiconductor chip bonded to the first semiconductor chip. The first semiconductor chip includes a first substrate having a first bottom surface. The second semiconductor chip includes a second substrate having a second bottom... Agent: Sk Hynix Inc.

20130037945 - Semiconductor device: Provided is a semiconductor device in which misalignment between a semiconductor die and a substrate (e.g., a circuit board) can be prevented or substantially reduced when the semiconductor die is attached to the circuit board. In a non-limiting example, the semiconductor device includes: a semiconductor die comprising at least one... Agent:

20130037936 - Semiconductor device and method of forming a stackable semiconductor package with vertically-oriented discrete electrical devices as interconnect structures: A semiconductor device has a substrate and first semiconductor die to the substrate. A plurality of vertically-oriented discrete electrical devices, such as a capacitor, inductor, resistor, diode, or transistor, is mounted over the substrate in proximity to the first semiconductor die. A first terminal of the discrete electrical devices is... Agent: Stats Chippac, Ltd.

20130037947 - Semiconductor device and method of manufacturing the same: As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining... Agent: Renesas Electronics Corporation

20130037941 - Semiconductor device reducing risks of a wire short-circuit and a wire flow: A semiconductor device includes a wiring substrate having first and second connection pads on a main surface thereof, a first semiconductor chip having first electrode pads, a second semiconductor chip having second electrode pads each of which has a size smaller than that of each of the first electrode pads,... Agent: Elpida Memory, Inc.

20130037943 - Semiconductor device, semiconductor package, method for manufacturing semiconductor device, and method for manufacturing semiconductor package: A semiconductor device includes a semiconductor substrate, which includes a through hole that extends through the semiconductor substrate. An insulative layer includes a first surface, an opposite second surface covering the semiconductor substrate, and an opening aligned with the through hole. An insulative film covers an inner wall surface of... Agent: Shinko Electric Industries Co., Ltd.

20130037939 - Semiconductor package and stack-type semiconductor package having the same: A semiconductor package includes a semiconductor chip having a first surface, a second surface which faces away from the first surface, and through holes which pass through the first surface and the second surface; a dielectric layer formed on one or more of the first surface and the second surface... Agent: Hynix Semiconductor Inc.

20130037933 - Semiconductor package with under bump metallization routing: A semiconductor package includes a semiconductor substrate a semiconductor substrate having source and drain regions formed therein, an intermediate routing structure to provide electrical interconnects to the source and drain regions, a dielectric layer formed over the intermediate routing structure, and an under-bump-metallization (UBM) stack. The intermediate routing structure includes... Agent:

20130037935 - Wafer level package structure and the fabrication method thereof: The present invention relates to a package for semiconductor device and the fabrication method for integrally encapsulating a whole semiconductor chip within a molding compound. In the semicondcutor device package, bonding pads distributed on the top of the chip are redistributed into an array of redistributed bonding pads located in... Agent:

20130037950 - Multi-chip wafer level package: A multi-chip wafer level package comprises three stacked semiconductor dies. A first semiconductor die is embedded in a first photo-sensitive material layer. A second semiconductor die is stacked on top of the first semiconductor die wherein the second semiconductor die is face-to-face coupled to the first semiconductor die. A third... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130037949 - Semiconductor assemblies with multi-level substrates and associated methods of manufacturing: Various embodiments of semiconductor assemblies with multi-level substrates and associated methods of manufacturing are described below. In one embodiment, a substrate for carrying a semiconductor die includes a first routing level, a second routing level, and a conductive via between the first and second routing levels. The conductive via has... Agent: Micron Technology, Inc.

20130037948 - Semiconductor device having a through-substrate via: Semiconductor devices are described that have a through-substrate via formed therein. In one or more implementations, the semiconductor devices include a top wafer and a bottom wafer bonded together with a patterned adhesive material. The top wafer and the bottom wafer include one or more integrated circuits formed therein. The... Agent: Maxim Integrated Products, Inc.

20130037952 - Semiconductor package and method for manufacturing the same: A semiconductor package includes a substrate, a driving chip module including a plurality of driving chips stacked on the substrate, and a molding part formed on the substrate by compressing a sheet type molding member in a semi-cured (B-stage) state to cover the driving chip module.... Agent: Sk Hynix Inc.

20130037951 - Semiconductor package structure with low inductance: A semiconductor package structure includes: a substrate comprising a plurality of power supply balls on a first surface of the substrate, a first metal conductor on a second surface of the substrate and at least one via coupling a power supply ball to the first metal conductor of the substrate;... Agent:

20130037954 - Metallization and its use in, in particular, an igbt or a diode: A vertical power semiconductor component includes a semiconductor chip and at least one layer serving as a heat sink. The semiconductor chip has a top main surface at a front side of the semiconductor chip, wherein the top main surface is in a heat exchanging relationship with the at least... Agent: Infineon Technologies Ag

20130037953 - Through silicon via structure and manufacturing method thereof: A manufacturing method for a through silicon via structure includes the following steps. First, a substrate is provided, and a through silicon hole is formed in the substrate. An outer plasma enhanced oxide layer is formed on the surface of the through silicon hole, and then a liner layer is... Agent:

20130037955 - Substrate for semiconductor device, semiconductor device having the substrate, and manufacturing method thereof: A substrate for a semiconductor device is provided. The substrate includes a first metal line, a second metal line, a metal support part, a first insulating part, and a second insulating part. The first metal line is electrically connected to a first electrode of the semiconductor device. The second metal... Agent:

20130037956 - Thin film structure for high density inductors and redistribution in wafer level packaging: Disclosed is a package that includes a wafer substrate and a metal stack seed layer. The metal stack seed layer includes a titanium thin film outer layer. A resist layer is provided in contact with the titanium thin film outer layer of the metal stack seed layer, the resist layer... Agent: Flipchip International, LLC

20130037957 - Flux composition, process for producing electrically connected structures, electrically connected structure, and semiconductor device: The flux composition allows substrates with bumps such as pillar bumps to be electrically connected to each other by reflowing of such bumps without causing any exposure of the bumps from the flux during reflowing, thus resulting in a satisfactory electrically connected structure.... Agent: Jsr Corporation

20130037958 - Cmos image sensor and method for forming the same: An integrated circuit structure includes an interconnect structure that includes a plurality of metal layers, wherein the interconnect structure is under a semiconductor substrate. A metal pad is formed in one of the plurality of metal layers. A dielectric pad extends from a bottom surface of the semiconductor substrate up... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130037963 - Conductive routings in integrated circuits using under bump metallization: An integrated circuit structure includes a first conductive layer and an under bump metallization layer over the first conductive layer. The first conductive layer has a first conductive region and a second conductive region electrically isolated from the first conductive region. The under bump metallization layer has a first conductive... Agent:

20130037960 - Methods of forming bonded semiconductor structures in 3d integration processes using recoverable substrates, and bonded semiconductor structures formed by such methods: Methods of forming bonded semiconductor structures include forming through wafer interconnects through a layer of material of a first substrate structure, bonding one or more semiconductor structures over the layer of material, and electrically coupling the semiconductor structures with the through wafer interconnects. A second substrate structure may be bonded... Agent: S.o.i.tec Silicon On Insulator Technologies

20130037959 - Methods of forming bonded semiconductor structures including interconnect layers having one or more of electrical, optical, and fluidic interconnects therein, and bonded semiconductor structures formed using such methods: Methods of forming bonded semiconductor structures include providing a substrate structure including a relatively thinner layer of material on a thicker substrate body, and forming a plurality of through wafer interconnects through the layer of material. A first semiconductor structure may be bonded over the thin layer of material, and... Agent: S.o.i.tec Silicon On Insulator Technologies

20130037961 - Semiconductor device and method for fabricating the same: A semiconductor device that may prevent an unexposed substrate and generation of bowing profile during a process for forming an open region having a high aspect ratio, and a method for fabricating the semiconductor device. The semiconductor device includes a first material layer formed over a substrate, an open region... Agent:

20130037964 - Semiconductor package: A semiconductor package substrate may include a first semiconductor chip, a second semiconductor chip, plugs and interconnection terminals. The second semiconductor chip may be arranged on an upper surface of the first semiconductor chip. The first and second semiconductor chips may have corresponding first regions and corresponding second regions. Conductive... Agent:

20130037965 - Three-dimensional integrated circuit, processor, semiconductor chip, and manufacturing method of three-dimensional integrated circuit: One aspect of the present invention is a three-dimensional integrated circuit 1 including a first semiconductor chip and a second semiconductor chip that are layered on each other, wherein each of (i) a wiring layer closest to an interface between the first and second semiconductor chips among wiring layers of... Agent:

20130037962 - Wafer level packaging structure with large contact area and preparation method thereof: A method to provide a wafer level package with increasing contact pad area comprising the steps of forming a first packaging layer on wafer top surface, grinding the wafer back surface and etch through holes, depositing a metal to fill the through holes and covering wafer backside, cutting through the... Agent:

20130037966 - Semiconductor device die bonding: A semiconductor device includes a semiconductor die having first and second opposing faces and an edge surface. The edge surface has an undercut under the first face. The second face of the semiconductor die is bonded to a bonding surface of a die support member, such as a thermally conductive... Agent: Freescale Semiconductor, Inc

20130037967 - Semiconductor package substrate: Disclosed herein is a semiconductor package substrate including a base substrate, a mounting member mounted on an upper portion of the base substrate, and an adhesive layer formed between the base substrate and the mounting member, wherein the adhesive layer includes a thermally conductive adhesive and a ductile adhesive formed... Agent: Samsung Electro-mechanics Co., Ltd.

20130037968 - Semiconductor apparatus and substrate: A semiconductor apparatus includes a semiconductor substrate having a main surface, a multilayer structure circuit formed over the main surface of the semiconductor substrate, a protective wall formed in the same layer as an uppermost layer of the multilayer structure circuit so as to surround the multilayer structure circuit in... Agent: Renesas Electronics Corporation

20130032775 - Mram with sidewall protection and method of fabrication: BEOL memory cells are described that include one or more sidewall protection layers on the memory device (including, for example, an MTJ element) deposited prior to interconnect via etching to prevent the formation of electrical shorts between layers. One embodiment uses a single layer sidewall protection sleeve that is deposited... Agent:

20130032776 - Light emitting diode structure and manufacturing method thereof: A light emitting diode structure and a manufacturing method thereof are disclosed. The structure includes a substrate, an N type semiconductor layer, and active layer, a P type semiconductor layer, a current diffusion layer, and a metal electrode. The metal ions of the P type semiconductor layer may bond with... Agent: Lextar Electronics Corp.

20130032777 - Semiconductor device and manufacturing method thereof: The present invention discloses a semiconductor device and a manufacturing method thereof. The method comprises the steps of providing a substrate on which a graphene layer or carbon nanotube layer is formed; exposing part of the graphene layer or carbon nanotube layer after forming a gate structure on the graphene... Agent:

20130032778 - Electron emitting source and substrate for thin film growth: The SrTiO3 buffer layer is formed by lamination of the Sr2+O2− layer and the Ti4+O24− layer. The surface of the buffer layer is terminated with the Ti4+O24− layer. On the buffer layer, a LaAlO3 thin film layer is formed. The thin film layer includes a La3+O2− layer and an Al3+O24−... Agent: Tokyo Institute Of Technology

20130032779 - Light emitting diode and manufacturing method thereof: A light emitting diode (LED) comprises a substrate, an epitaxial layer and an aluminum nitride (AlN) layer sequentially disposed on the substrate. The AlN layer comprises a plurality of stacks separated from each other, wherein the epitaxial layer entirely covers the plurality of stacks of the AlN layer. The AlN... Agent: Advanced Optoelectronic Technology, Inc.

20130032780 - Photodiode, optical sensor device, and photodiode manufacturing method: A photodiode and the like capable of preventing the responsivity on the short wavelength side from deteriorating while totally improving the responsivity in a type II MQW structure, is provided. The photodiode is formed on a group III-V compound semiconductor substrate 1, and includes a pixel P. The photodiode includes... Agent: Sumitomo Electric Industries, Ltd.

20130032781 - Epitaxial substrate and method for manufacturing epitaxial substrate: Provided is a crack-free epitaxial substrate with reduced warping, in which a silicon substrate is used as a base substrate. The epitaxial substrate includes a (111) single crystal Si substrate, a superlattice layer group in which a plurality of superlattice layers are laminated, and a crystal layer. The superlattice layer... Agent: Ngk Insulators, Ltd.

20130032782 - Optoelectronic platform with carbon based conductor and quantum dots and transistor comprising such a platform: The invention comprises an optoelectronic platform with a carbon-based conduction layer and a layer of colloidal quantum dots on top as light absorbing material. Photoconductive gain on the order of 106 is possible, while maintaining de operating voltage low. The platform can be used as a transistor.... Agent:

20130032783 - Non-planar germanium quantum well devices: Techniques are disclosed for forming a non-planar germanium quantum well structure. In particular, the quantum well structure can be implemented with group IV or III-V semiconductor materials and includes a germanium fin structure. In one example case, a non-planar quantum well device is provided, which includes a quantum well structure... Agent:

20130032784 - Thin film transistor including a nanoconductor layer: A thin film transistor having a channel region including a nanoconductor layer. The nanoconductor layer can be a dispersed monolayer of nanotubes or nanowires formed of carbon. The thin film transistor generally includes a gate terminal insulated by a dielectric layer. The nanoconductor layer is placed on the dielectric layer... Agent: Ignis Innovation Inc.

20130032788 - Carbazole-based compound and organic light-emitting diode comprising the same: A carbazole-based compound of Formula 1 and an organic light-emitting diode including the same. The carbazole-based compound represented by Formula 1 has a triarylamine structure, wherein at least one of R1 to R5 is essentially a nitrogen-containing group. Thus, the carbazole-based compound has high glass transition temperature and/or high melting... Agent: Samsung Mobile Display Co., Ltd.

20130032791 - Conjugated polymers having an imine group at the intrachain electron donor bridgehead position useful in electronic devices: Described herein are novel light absorbing conjugated polymeric electron donor materials for organic photovoltaic devices and other applications. In one embodiment, the polymer structure comprises a conjugated electron rich donor unit with an imine functionality at the bridgehead position and a conjugated electron deficient unit in the polymer backbone arranged... Agent:

20130032787 - Heterocyclic compound and organic light-emitting device including the same: s

20130032785 - Materials for organic light emitting diode: Organometallic compounds comprising a phenylquinoline or phenylisoquinoline ligand having the quinoline or isoquinoline linked to the phenyl ring of the phenylquinoline or phenylisoquinoline, respectively, via two carbon atoms. These compounds also comprise a substituent other than hydrogen and deuterium on the quinoline, isoquinoline or linker. These compounds may be used... Agent: Universal Display Corporation

20130032786 - Organic compound and organic electroluminescent device employing the same: wherein, R1 are independent and can be hydrogen, or C1-8 alkyl, and R2, and R3 can be hydrogen, hydroxy, C1-8 alkyl, C1-8 alkoxy, C5-10 aryl, or C2-8 heteroaryl. The organic compounds of the disclosure have a high triplet energy (tEg) gap and apt to transmit the energy to a guest... Agent:

20130032790 - Organic electroluminescent element and display: Provided is an organic electroluminescent element which includes a pair of electrodes composed of a positive electrode and a negative electrode, with at least one of the electrodes being transparent or semi-transparent, and an organic compound layer interposed between the pair of electrodes and containing one or more charge transporting... Agent: Fuji Xerox Co., Ltd.

20130032789 - Organic electroluminescent element and display medium: An organic electroluminescent element includes a pair of electrodes formed of a positive electrode and a negative electrode, with at least one of the electrodes being transparent or semi-transparent, and one or more organic compound layers interposed between the pair of electrodes, with at least one layer containing one or... Agent: Fuji Xerox Co., Ltd.

20130032792 - Suspension or solution for organic optoelectronic device, making method thereof, and applications: A suspension or solution for organic optoelectronic device is disclosed in this invention. The composition of the suspension or solution includes at least one kind of micro/nano transition metal oxide and a solvent. The composition of the suspension or solution can selectively include at least one kind of transition metal... Agent: National Taiwan University

20130032797 - Field-effect transistor and method for manufacturing the same: The present invention achieves a formation of a metal oxide film of a thin film transistor with a simplified process. The present invention is concerned with a method for manufacturing a field-effect transistor comprising a gate electrode, a source electrode, a drain electrode, a channel layer and a gate insulating... Agent:

20130032798 - Oxide for semiconductor layer of thin-film transistor, sputtering target, and thin-film transistor: Disclosed is an oxide for a semiconductor layer of a thin-film transistor, said oxide being excellent in the switching characteristics of a thin-film transistor, specifically enabling favorable characteristics to be stably obtained even in a region of which the ZnO concentration is high and even after forming a passivation layer... Agent: Kabushiki Kaisha Kobe Seiko Sho (kobe Steel, Ltd.)

20130032796 - Self-aligned metal oxide tft with reduced number of masks: A method of fabricating MOTFTs on transparent substrates by positioning opaque gate metal on the substrate front surface and depositing gate dielectric material overlying the gate metal and a surrounding area and metal oxide semiconductor material on the dielectric material. Depositing selectively removable etch stop material on the semiconductor material... Agent:

20130032795 - Semiconductor device: The invention is to provide a structure of a semiconductor device which achieves quick response and high-speed drive by improving on-state characteristics of a transistor, and to provide a highly reliable semiconductor device. In a transistor in which a semiconductor layer, a source and drain electrode layers, a gate insulating... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130032794 - Thin film transistor and thin film transistor array panel: Provided is a thin film transistor and thin film transistor panel array. The thin film transistor includes: a substrate; a gate electrode disposed on the substrate; a semiconductor layer disposed on the substrate and partially overlapping with the gate electrode; a source electrode and a drain electrode spaced apart from... Agent: Samsung Electronics Co., Ltd.

20130032793 - Thin film transistor array panel and manufacturing method thereof: Provided is a thin film transistor array panel. The thin film transistor array panel according to exemplary embodiments of the present invention includes: a gate wiring layer disposed on a substrate; an oxide semiconductor layer disposed on the gate wiring layer; and a data wiring layer disposed on the oxide... Agent: Samsung Electronics Co., Ltd.

20130032799 - Apparatus and methods for de-embedding through substrate vias: A method includes providing on a substrate having at least two through substrate vias (“TSVs”) a plurality of test structures for de-embedding the measurement of the intrinsic characteristics of a device under test (DUT) including at least two of the TSVs; measuring the intrinsic characteristics [L] for a first and... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130032800 - Semiconductor device: A semiconductor device includes a circuit board including a ground portion, and a semiconductor package disposed on the circuit board. The semiconductor package includes an external connecting pad and an exposed pad. The exposed pad and the ground portion are electrically connected at a first surface of the exposed pad.... Agent:

20130032801 - Electronic device and method for manufacturing same: The electronic device includes a substrate, a first electrode formed over a surface of the substrate, a second electrode located on an opposite side of the first electrode from the substrate so as to face the first electrode, and a functional layer interposed between the first electrode and second electrode... Agent: Panasonic Corporation

20130032807 - Circuit board, method of manufacturing circuit board, display, and electronic unit: A circuit board includes: a first wiring layer provided on a substrate; an insulating layer including an opening, the insulating layer being provided on the first wiring layer; a surface-energy control layer provided in a region opposed to the opening of the insulating layer on the first wiring layer, the... Agent: Sony Corporation

20130032808 - Display device: A display device having a first pixel electrode and a second pixel electrode whose areas are different from each other is provided. In the display device, the first pixel electrode and the second pixel electrode are electrically connected to a first transistor and a second transistor, respectively. Gates of the... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130032803 - Organic light-emitting display device and method of manufacturing the same: An OLED device includes an active layer on a substrate; a first insulating layer covering the active layer, and including a first opening and a first insulation island in the first opening, separated from an inner surface of the first opening; a gate electrode on the first insulating layer including... Agent: Samsung Mobile Display Co., Ltd.

20130032806 - Semiconductor device: Adverse effects of variation in threshold voltage are reduced. In a semiconductor device, electric charge is accumulated in a capacitor provided between a gate and a source of a transistor, and then, the electric charge accumulated in the capacitor is discharged; thus, the threshold voltage of the transistor is obtained.... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130032805 - Thin film transistor array substrate, organic light emitting display device including the same, and manufacturing method of the thin film transistor array substrate: A thin film transistor array substrate includes a thin film transistor on a substrate, the thin film transistor including an active layer, a gate electrode, a source electrode, and a drain electrode; a capacitor including a lower electrode in a same layer as the active layer and an upper electrode... Agent:

20130032804 - Thin-film transistor array substrate, organic light-emitting display device comprising the thin-film transistor array substrate, and method of manufacturing the thin-film transistor array substrate: A thin-film transistor (TFT) array substrate includes an active layer on a substrate and a lower electrode of a capacitor on the same level as the active layer, a first insulation layer on the active layer and the lower electrode and having a first gap exposing an area of the... Agent:

20130032802 - Thin-film transistor array substrate, organic light-emitting display having the same, and method of manufacturing the organic light-emitting display: A thin-film transistor array substrate, an organic light-emitting display having the same, and a method of manufacturing the organic light-emitting display are disclosed. In one embodiment, the thin-film transistor array substrate includes a buffer layer formed on a substrate, a first insulating layer formed on the buffer layer, a pixel... Agent: Samsung Mobile Display Co., Ltd.

20130032809 - Semiconductor devices with non-implanted barrier regions and methods of fabricating same: An electronic device includes a silicon carbide layer including an n-type drift region therein, a contact forming a Schottky junction with the drift region, and a p-type junction barrier region on the silicon carbide layer. The p-type junction barrier region includes a p-type polysilicon region forming a P-N heterojunction with... Agent:

20130032816 - High electron mobility transistors and methods of manufacturing the same: High electron mobility transistors (HEMTs) including a substrate and a HEMT stack on the substrate, the HEMT stack including a compound semiconductor layer that includes a 2-dimensional electron gas (2DEG), an upper compound semiconductor layer that has a polarization index higher than a polarization index of the compound semiconductor layer,... Agent: Samsung Electronics Co., Ltd.

20130032810 - Led on silicon substrate using zinc-sulfide as buffer layer: A vertical GaN-based blue LED has an n-type GaN layer that was grown over a ZnS layer that in turn was grown directly on a silicon substrate. In one example, the ZnS layer is a transitional buffer layer that is 50 nm thick, and the n-type GaN layer is at... Agent: Bridgelux, Inc.

20130032815 - Light emitting diode array and method for manufacturing the same: An LED array includes a substrate, protrusions formed on a top surface of the substrate, and LEDs formed on the top surface of the substrate and located at a top of the protrusions. The LEDs are electrically connected with each other. Each LED includes a connecting layer, an n-type GaN... Agent: Advanced Optoelectronic Technology, Inc.

20130032812 - Method and system for a gan vertical jfet utilizing a regrown channel: A vertical III-nitride field effect transistor includes a drain comprising a first III-nitride material, a drain contact electrically coupled to the drain, and a drift region comprising a second III-nitride material coupled to the drain. The field effect transistor also includes a channel region comprising a third III-nitride material coupled... Agent: Epowersoft, Inc.

20130032811 - Method and system for a gan vertical jfet utilizing a regrown gate: A vertical III-nitride field effect transistor includes a drain comprising a first III-nitride material, a drain contact electrically coupled to the drain, and a drift region comprising a second III-nitride material coupled to the drain and disposed adjacent to the drain along a vertical direction. The field effect transistor also... Agent: Epowersoft, Inc.

20130032813 - Method and system for doping control in gallium nitride based devices: A method of growing a III-nitride-based epitaxial structure includes providing a substrate in an epitaxial growth reactor and heating the substrate to a predetermined temperature. The method also includes flowing a gallium-containing gas into the epitaxial growth reactor and flowing a nitrogen-containing gas into the epitaxial growth reactor. The method... Agent: Epowersoft, Inc.

20130032814 - Method and system for formation of p-n junctions in gallium nitride based electronics: A semiconductor device includes a III-nitride substrate having a first conductivity type and a first electrode electrically coupled to the III-nitride substrate. The semiconductor device also includes a III-nitride material having a second conductivity type coupled to the III-nitride substrate at a regrowth interface and a p-n junction disposed between... Agent: Epowersoft, Inc.

20130032820 - Optoelectronic component and method for producing an optoelectronic component: The invention concerns an optoelectronic component (1) for mixing electromagnetic radiation having different wavelengths, more particularly in the far field. At least one first semiconductor chip (3) for emitting electromagnetic radiation in a first spectral range is provided on a carrier (2). Furthermore, at least one second semiconductor chip (4,... Agent:

20130032817 - Power amplifier: A power amplifier includes a semiconductor substrate including transistor cells, a drain electrode for the transistor cells located on the semiconductor substrate, a drain pad located on the semiconductor substrate and connected to the drain electrode, an ion-implanted resistance located in the semiconductor substrate and extending along and in contact... Agent: Mitsubishi Electric Corporation

20130032818 - Semiconductor device and method for manufacturing semiconductor device: A semiconductor device includes a buffer layer that is disposed over a substrate, a high-resistance layer that is disposed over the buffer layer, the high-resistance layer being doped with a transition metal for achieving high resistance, a low-resistance region that is disposed in a portion of the high-resistance layer or... Agent: Fujitsu Limited

20130032819 - Semiconductor transistor: The semiconductor transistor according the present invention includes an active layer composed of a GaN-based semiconductor and a gate insulating film formed on the active layer. The gate insulating film has a first insulating film including one or more compounds selected from the group consisting of Al2O3, HfO2, ZrO2, La2O3,... Agent: Advanced Power Device Research Association

20130032821 - Schottky barrier diode and method for manufacturing the same: A Schottky barrier diode (SBD) is provided, which improves electrical characteristics and optical characteristics by securing high crystallinity by including an n-gallium nitride (GaN) layer and a GaN layer which are doped with aluminum (Al). In addition, by providing a p-GaN layer on the Al-doped GaN layer, a depletion layer... Agent:

20130032823 - Silicon carbide semiconductor device: The third impurity region is arranged between the first and second impurity regions and it has the second conductivity type. First to third electrodes are provided on the first to third impurity regions, respectively. A Schottky electrode is provided on the part of the first layer and electrically connected to... Agent: Sumitomo Electric Industries, Ltd.

20130032824 - Silicon carbide semiconductor device: First, second, fourth, and fifth impurity regions have a first conductivity type, and a third impurity region has a second conductivity type. The first to third impurity regions reach a first layer having the first conductivity type. The fourth and fifth impurity regions are provided on a second layer. First... Agent: Sumitomo Electric Industries, Ltd.

20130032822 - Substrate, semiconductor device, and method of manufacturing the same: A substrate capable of achieving a lowered probability of defects produced in a step of forming an epitaxial film or a semiconductor element, a semiconductor device including the substrate, and a method of manufacturing a semiconductor device are provided. A substrate is a substrate having a front surface and a... Agent: Sumitomo Electric Industries, Ltd.

20130032829 - Deposition source assembly, organic layer deposition apparatus, and method of manufacturing organic light-emitting display apparatus by using the organic layer deposition apparatus: An organic layer deposition apparatus, and a method of manufacturing an organic light-emitting display device by using the organic layer deposition apparatus. Here, the organic layer deposition apparatus includes a deposition source assembly. The deposition source assembly includes a first deposition source for discharging a deposition material, a second deposition... Agent:

20130032832 - Display device and method for manufacturing display device: A display device includes an electrode layer formed at a predetermined position on a substrate, an insulating film having a through-hole formed on the top of the electrode layer, and a wiring film connected to the electrode layer via the through-hole formed in the insulating film. Based on a surface... Agent: Japan Display East Inc.

20130032827 - Display substrate, method of manufacturing a display substrate and liquid crystal display device having a display substrate: A display substrate for a display device includes a substrate, a switching device, a gate line, a data line, a pixel electrode, a plurality of common electrodes. The switching device includes an active pattern, a gate insulation layer, a gate electrode, a source electrode and a drain electrode. The gate... Agent: Samsung Mobile Display Co., Ltd.

20130032826 - Integrated apparatus including driver chips, a power supply and led chips on an isolative substrate: Disclosed is an integrated apparatus including an isolative substrate, a plurality of driver chips provided on a side of the isolative substrate, a power supply provided on the side of the isolative substrate and electrically connected to the driver chips, and LED chips provided on another side of the isolative... Agent: Chung-shan Institute Of Science And Technology, Armaments, Bureau, Ministry Of National Defense

20130032828 - Led light strip module structure: A LED light strip module structure includes a substrate and LED dies. The substrate has first and second surfaces. Accommodating cavities are formed on the first surface and extend toward the second surface. Each accommodating cavity has a bottom surface. Bonding metal layers are respectively attached to the bottom surfaces... Agent:

20130032833 - Led module and led lamp having the led module: An LED module includes a first dielectric layer, and a first patterned conductive layer having first, second, and third die-bonding pads. Each die-bonding pad includes a pad body having a die-bonding area, and an extension extended from the pad body. The extension of the first die-bonding pad extends in proximity... Agent: Lite-on Electronics (guangzhou) Limited

20130032831 - Organic light emitting diode and method of manufacturing: Aspects of the present disclosure provide for manufacturing an organic light emitting diode (OLED) by forming two terminals of the OLED on two substrates of the display, and then depositing a plurality of layers of the OLED on one or both of the two terminals to form a first portion... Agent: Ignis Innovation Inc.

20130032830 - Organic light emitting display device and method of manufacturing the same: Discussed are an organic light emitting display device and a method of manufacturing the same in which organic and inorganic films are formed on a polarization plate, and the polarization plate is attached to an organic light emitting panel so that the organic and inorganic films seal the organic light... Agent:

20130032825 - Resonant optical cavity semiconductor light emitting device: The present invention is a light emitting device apparatus and method of fabrication. The structure employs a waveguide in the lateral (x) direction formed via materials index, resonant wavelength and/or current-induced index changes. In the vertical (y) direction a resonant optical cavity is formed via distributed Bragg reflector and/or metal... Agent:

20130032835 - Device with inverted large scale light extraction structures: An interface including roughness components for improving the propagation of radiation through the interface is provided. The interface includes a first profiled surface of a first layer comprising a set of large roughness components providing a first variation of the first profiled surface having a first characteristic scale and a... Agent:

20130032834 - Led having a low defect n-type layer that has grown on a silicon substrate: A vertical GaN-based blue LED has an n-type GaN layer that was grown directly on Low Resistance Layer (LRL) that in turn was grown over a silicon substrate. In one example, the LRL is a low sheet resistance GaN/AlGaN superlattice having periods that are less than 300 nm thick. Growing... Agent: Bridgelux, Inc.

20130032836 - N-type gallium-nitride layer having multiple conductive intervening layers: A vertical GaN-based blue LED has an n-type layer comprising multiple conductive intervening layers. The n-type layer contains a plurality of periods. Each period of the n-type layer includes a gallium-nitride (GaN) sublayer and a thin conductive aluminum-gallium-nitride (AlGaN:Si) intervening sublayer. In one example, each GaN sublayer has a thickness... Agent: Bridgelux, Inc.

20130032837 - Fluorescent coating and a method for making the same: Disclosed is a fluorescent coating and a method for making the same. At first, fluorescent powder is mixed with an anti-electrostatic solution. The mixture is cleared of impurities before it is dried and sintered. Thus, the fluorescent powder is coated with the anti-electrostatic material. The fluorescent powder coated with the... Agent: Chung-shan Institute Of Science And Technology, Armaments, Bureau, Ministry Of National Defense

20130032842 - Light emitting device package and method of manufacturing the same: There are provided a light emitting device package and a method of manufacturing the same. The light emitting device package includes a body part including a through hole formed in a thickness direction; at least one light emitting device disposed within the through hole; and a wavelength conversion part filling... Agent:

20130032839 - Light emitting diode and manufacturing method thereof: A manufacturing method for an LED with roughened lateral surfaces comprises following steps: providing an LED wafer with an electrically conductive layer disposed thereon; providing a photoresist layer on the electrically conductive layer; roughening a lateral surface of the electrically conductive layer by wet etching; forming a depression in the... Agent: Advanced Optoelectronic Technology, Inc.

20130032843 - Light emitting diode package and manufacturing method thereof: A light emitting diode (LED) package and a manufacturing method thereof are provided. The LED package includes a substrate including a circuit layer, an LED mounted on the substrate, and a plurality of protruded reflection units disposed in a region excluding an LED mounting region on the substrate and configured... Agent: Samsung Electronics Co., Ltd.

20130032844 - Light emitting package: The present invention discloses a light emitting package, comprising: a base; a light emitting device on the base; an electrical circuit layer electrically connected to the light emitting device; a gold layer on the electrical circuit layer; a wire electrically connected between the light emitting device and the gold layer;... Agent: Lg Innotek Co., Ltd.

20130032841 - Light-emitting device and lighting device: A light-emitting device which has various emission colors and can be manufactured efficiently and easily is provided. A first conductive layer formed of a semi-transmissive and semi-reflective conductive film is provided in a first light-emitting element region, so that the intensity of light in a specific wavelength region is increased... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130032840 - Organic light emitting devices: Organic light emitting devices are provided. The organic light emitting device may include a substrate having a first refractive index, a first electrode on the substrate, a second electrode disposed between the substrate and the first electrode and having a thickness equal to or greater than one-hundredth of a minimum... Agent: Electronics And Telecommunications Research Institute

20130032838 - Semiconductor light emitting device: According to one embodiment, a semiconductor light emitting device having a base, a mounting material and a chip of a semiconductor light emitting element is provided. The mounting material is provided on the base. The chip of the semiconductor light emitting element is fixed onto the base via the mounting... Agent: Kabushiki Kaisha Toshiba

20130032847 - Distributed current blocking structures for light emitting diodes: An LED device includes a strip-shaped electrode, a strip-shaped current blocking structure and a plurality of distributed current blocking structures. The current blocking structures are formed of an insulating material such as silicon dioxide. The strip-shaped current blocking structure is located directly underneath the strip-shaped electrode. The plurality of current... Agent: Bridgelux, Inc.

20130032845 - High temperature gold-free wafer bonding for light emitting diodes: A vertical GaN-based LED is made by growing an epitaxial LED structure on a silicon wafer. A silver layer is added and annealed to withstand >450° C. temperatures. A barrier layer (e.g., Ni/Ti) is provided that is effective for five minutes at >450° C. at preventing bond metal from diffusing... Agent: Bridgelux, Inc.

20130032849 - Light emitting devices: Light-emitting devices are provided, the light-emitting devices include a light-emitting structure layer having a first conductive layer, a light-emitting layer and a second conductive layer sequentially stacked on a first of a substrate, a plurality of seed layer patterns formed apart each other in the first conductive layer; and a... Agent: Samsung Electronics Co., Ltd.

20130032850 - Light-emitting diode mounted on transparent conductive layers and manufacturing method thereof: A light-emitting diode (LED) and manufacturing method thereof are disclosed. The LED includes a transparent substrate, a plurality of transparent conductive layers, a plurality of metal circuits, and a LED chip. The LED chip is suitable for emitting a light and a portion of the light emits toward the transparent... Agent: Everlight Electronics Co., Ltd.

20130032846 - Non-reactive barrier metal for eutectic bonding process: A eutectic metal layer (e.g., gold/tin) bonds a carrier wafer structure to a device wafer structure. In one example, the device wafer structure includes a silicon substrate upon which an epitaxial LED structure is disposed. A layer of silver is disposed on the epitaxial LED structure. The carrier wafer structure... Agent: Bridgelux, Inc.

20130032851 - Optoelectronic architecture having compound conducting substrate: Optoelectronic device modules, arrays optoelectronic device modules and methods for fabricating optoelectronic device modules are disclosed. The device modules are made using a starting substrate having an insulator layer sandwiched between a bottom electrode made of a flexible bulk conductor and a conductive back plane. An active layer is disposed... Agent: Nanosolar, Inc.

20130032848 - Optoelectronic device and method for manufacturing the same: An optoelectronic device comprises a semiconductor stack comprising a first semiconductor layer, an active layer and a second semiconductor layer, a first electrode electrically connecting with the first semiconductor layer, a second electrode electrically connecting with the second semiconductor layer, wherein there is a smallest distance D1 between the first... Agent: Epistar Corporation

20130032852 - Silicone resin composition, encapsulating material, and light emitting diode device: A silicone resin composition contains a silicon-containing component including a silicon atom to which a monovalent hydrocarbon group selected from a saturated hydrocarbon group and an aromatic hydrocarbon group is bonded and a silicon atom to which an alkenyl group is bonded. The number of moles of alkenyl group per... Agent: Nitto Denko Corporation

20130032853 - Silver anti-tarnishing agent, silver anti-tarnishing resin composition, silver anti-tarnishing method, and light-emitting diode using same: The present invention relates to a silver anti-tarnish agent having, as an effective component, a zinc salt and/or a zinc complex, preferably at least one kind selected from the group consisting of a carboxylic acid zinc salt having a carbon atom number of 3 to 20, a phosphoric acid zinc... Agent: Nippon Kayaku Kabushiki Kaisha

20130032854 - Rectirier: The rectifier in this invention is connected in series with two field effect transistor, comprises: the source S1 of first N-channel FET F1 and the source S2 of second N-channel FET F2 are directly connected together, the gate G1 of first N-channel FET F1 and the gate G2 of second... Agent:

20130032855 - Semiconductor arrangement: A semiconductor arrangement includes a first and second controllable vertical n-channel semiconductor chip. Each of the controllable vertical n-channel semiconductor chips has a front side, a rear side opposite the front side, a front side main contact arranged on the front side, a rear side main contact arranged on the... Agent: Infineon Technologies Ag

20130032856 - Semiconductor apparatus: A semiconductor apparatus includes: a semiconductor apparatus includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type; and a third semiconductor layer of the first conductivity type, wherein: the second semiconductor layer is formed between the first and third semiconductor layers,... Agent: Fujitsu Limited

20130032857 - Silicon-germanium hydrides and methods for making and using same: The present invention provides novel silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the novel compounds.... Agent: The Arizona Board Of Regents, A Body Corporate Acting On Behalf Of Arizona State University

20130032858 - Rare earth oxy-nitride buffered iii-n on silicon: Rare earth oxy-nitride buffered III-N on silicon includes a silicon substrate with a rare earth oxide (REO) structure, including several REO layers, is deposited on the silicon substrate. A layer of single crystal rare earth oxy-nitride is deposited on the REO structure. The REO structure is stress engineered to approximately... Agent:

20130032859 - Epitaxial extension cmos transistor: A pair of horizontal-step-including trenches are formed in a semiconductor layer by forming a pair of first trenches having a first depth around a gate structure on the semiconductor layer, forming a disposable spacer around the gate structure to cover proximal portions of the first trenches, and by forming a... Agent: International Business Machines Corporation

20130032860 - Hfet with low access resistance: A novel semiconductor power transistor is presented. The semiconductor structure is simple and is based on a Hetero-structure FET structure, where the access regions have been eliminated so as to effectively obtain a lower specific on-resistance, and a higher control on the transport properties of the device, drastically reducing the... Agent:

20130032861 - Touch panel and method for manufacturing the same: A touch panel includes a first substrate having a plurality of lower electrodes; a second substrate spaced a distance apart from the lower substrate and having a plurality of upper electrodes that correspond to the lower electrodes; a conductive rubber layer interposed between the lower electrodes and the upper electrodes;... Agent: Pantech Co., Ltd.

20130032862 - High voltage resistor with high voltage junction termination: Provided is a high voltage semiconductor device. The high voltage semiconductor device includes a substrate that includes a doped well disposed therein. The doped well and the substrate have opposite doping polarities. The high voltage semiconductor device includes an insulating device disposed over the doped well. The high voltage semiconductor... Agent: Taiwan Semiconductor Manufacturing Company. Ltd.

20130032863 - Integrated gate controlled high voltage divider: An integrated circuit containing a gate controlled voltage divider having an upper resistor on field oxide in series with a transistor switch in series with a lower resistor. A resistor drift layer is disposed under the upper resistor, and the transistor switch includes a switch drift layer adjacent to the... Agent: Texas Instruments Incorporated

20130032865 - Fabrication of field-effect transistors with atomic layer doping: Field effect transistors fabricated using atomic layer doping processes are disclosed. In accordance with an embodiment of an atomic layer doping method, a semiconducting surface and a dopant gas mixture are prepared. Further, a dopant layer is grown on the semiconducting surface by applying the dopant gas mixture to the... Agent: International Business Machines Corporation

20130032866 - Semiconductor device and manufacturing method thereof: A transistor includes an island-like semiconductor film over a substrate, and a conductive film forming a gate electrode over the island-like semiconductor film with a gate insulating film interposed therebetween. The semiconductor film includes a channel forming region, a first impurity region forming a source or drain region, and a... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130032864 - Transistor with boot shaped source/drain regions: Devices are formed with boot shaped source/drain regions formed by isotropic etching followed by anisotropic etching. Embodiments include forming a gate on a substrate, forming a first spacer on each side of the gate, forming a source/drain region in the substrate on each side of the gate, wherein each source/drain... Agent: Globalfoundries Inc

20130032867 - Signal line driving circuit and light emitting device: The invention relates to a signal line driving circuit having a first and a second current source circuits, a shift register, and a constant current source for video signal, in which the first current source circuit is disposed in a first latch and the second current source circuit is disposed... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130032868 - Trench capacitor with spacer-less fabrication process: A trench capacitor and method of fabrication are disclosed. The SOI region is doped such that a selective isotropic etch used for trench widening does not cause appreciable pullback of the SOI region, and no spacers are needed in the upper portion of the trench.... Agent: International Business Machines Corporation

20130032869 - Split-gate flash memory with improved program efficiency: A split gate memory cell is fabricated with a word gate extending below an upper surface of a substrate having the channel region. An embodiment includes providing a band engineered channel with the word gate extending there through. Another embodiment includes forming a buried channel with the word gate extending... Agent: Globalfoundries Singapore Pte. Ltd.

20130032870 - Methods of forming a multi-tiered semiconductor device and apparatuses including the same: Methods of forming multi-tiered semiconductor devices are described, along with apparatuses that include them. In one such method, a silicide is formed in a tier of silicon, the silicide is removed, and a device is formed at least partially in a void that was occupied by the silicide. One such... Agent:

20130032871 - Semiconductor device having air gap and method of fabricating the same: A semiconductor device includes tunneling insulating layers on active regions of a substrate, floating gate electrodes on the tunneling insulating layers, an isolation trench within the substrate and the isolation trench defines the active region, spaces the tunneling insulating layers, and isolates the floating gate electrodes. A bottom of the... Agent:

20130032872 - Non-volatile memory cell having a high k dielectric and metal gate: A non-volatile memory including a substrate of a first conductivity type with first and second spaced apart regions formed therein of a second conductivity type with a channel region therebetween. A polysilicon metal gate word line is positioned over a first portion of the channel region and spaced apart therefrom... Agent: Silicon Storage Technology, Inc.

20130032874 - Method for manufacturing nonvolatile semiconductor memory device and nonvolatile semiconductor memory device: According to one embodiment, a method is disclosed for manufacturing a nonvolatile semiconductor memory device. The device includes a plurality of electrode films stacked along a first axis perpendicular to a major surface of a substrate, a plurality of semiconductor layers penetrating through the electrode films, and a memory film... Agent: Kabushiki Kaisha Toshiba

20130032875 - Semiconductor devices and methods of fabricating the same: One example embodiment of a semiconductor device includes a memory cell array formed on a substrate. The memory cell array includes a gate stack including alternating conductive and insulating layers. A first lower conductive layer in the gate stack has a portion disposed below a first upper conductive layer in... Agent: Samsung Electronics Co., Ltd.

20130032873 - Semiconductor memory device and method for manufacturing the same: According to one embodiment, a semiconductor memory device includes a stacked body, a semiconductor pillar, and a plurality of memory cells. The stacked body includes a plurality of stacked gate electrodes and inter-electrode insulating layers provided between the gate electrodes. The semiconductor pillar punches through the stacked body. The plurality... Agent: Kabushiki Kaisha Toshiba

20130032876 - Replacement gate etsoi with sharp junction: A transistor structure includes a channel disposed between a source and a drain; a gate conductor disposed over the channel and between the source and the drain; and a gate dielectric layer disposed between the gate conductor and the source, the drain and the channel. In the transistor structure a... Agent: International Business Machines Corporation

20130032877 - N-channel transistor comprising a high-k metal gate electrode structure and a reduced series resistance by epitaxially formed semiconductor material in the drain and source areas: When forming sophisticated semiconductor devices including high-k metal gate electrode structures and N-channel transistors, superior performance may be achieved by incorporating epitaxially grown semiconductor materials, for instance a strain-inducing silicon/carbon alloy in combination with an N-doped silicon material, which may provide an acceptable sheet resistivity.... Agent: Globalfoundries Inc.

20130032878 - Semiconductor device: According to example embodiments, a semiconductor device includes horizontal patterns stacked on a substrate. The horizontal patterns define an opening through the horizontal patterns. A first core pattern is in the opening. A second core pattern is in the opening on the first core pattern. A first active pattern is... Agent:

20130032879 - Semiconductor device and method for forming the same: A semiconductor device and a method for forming the same are disclosed. The semiconductor device includes vertical pillars formed by etching a semiconductor substrate and junction regions which are located among the neighboring vertical pillars and spaced apart from one another in a zigzag pattern. As a result, the semiconductor... Agent: Hynix Semiconductor Inc.

20130032880 - High voltage device and manufacturing method thereof: The present invention discloses a high voltage device and a manufacturing method thereof. The high voltage device is formed in a first conductive type substrate, wherein the substrate has an upper surface. The high voltage device includes: a second conductive type buried layer, which is formed in the substrate; a... Agent: Richtek Technology Corporation, R.o.c.

20130032881 - Asymmetric source-drain field effect transistor and method of making: The present invention is related to microelectronic device technologies. A method for making an asymmetric source-drain field-effect transistor is disclosed. A unique asymmetric source-drain field-effect transistor structure is formed by changing ion implantation tilt angles to control the locations of doped regions formed by two ion implantation processes. The asymmetric... Agent: Fudan University

20130032882 - Bi-directional blocking voltage protection devices and methods of forming the same: Bi-directional blocking voltage protection devices and methods of forming the same are disclosed. In one embodiment, a protection device includes an n-well and first and second p-wells disposed on opposite sides of the n-well. The first p-well includes a first P+ region and a first N+ region and the second... Agent: Analog Devices, Inc.

20130032883 - Fabrication of field-effect transistors with atomic layer doping: Field effect transistors fabricated using atomic layer doping processes are disclosed. In accordance with an embodiment of an atomic layer doping method, a semiconducting surface and a dopant gas mixture are prepared. Further, a dopant layer is grown on the semiconducting surface by applying the dopant gas mixture to the... Agent: International Business Machines Corporation

20130032885 - Area efficient gridded polysilicon layouts: Gridded polysilicon semiconductor layouts implement double poly patterning to cut polylines of the layout into polyline segments. Devices are arranged on the polyline segments of a common polyline to reduce the area used to implement a circuit structure relative to conventional gridded polysilicon layout. Stacking of PMOS and NMOS devices... Agent: Qualcomm Incorporated

20130032884 - Integrated circuit device having defined gate spacing and method of designing and fabricating thereof: A device, and method of fabricating and/or designing such a device, including a first gate structure having a width (W) and a length (L) and a second gate structure separated from the first gate structure by a distance greater than: (√{square root over (W*W+L*L)})/10. The second gate structure is a... Agent: Taiwan Semiconductor Manufacturing Company, Ltd., ("tsmc")

20130032886 - Low threshold voltage and inversion oxide thickness scaling for a high-k metal gate p-type mosfet: A structure has a semiconductor substrate and an nFET and a pFET disposed upon the substrate. The pFET has a semiconductor SiGe channel region formed upon or within a surface of the semiconductor substrate and a gate dielectric having an oxide layer overlying the channel region and a high-k dielectric... Agent: International Business Machines Corporation

20130032887 - Semiconductor device and manufacturing method thereof: A manufacturing method for manufacturing a semiconductor device includes depositing a spacer material on a semiconductor substrate, the substrate includes an NMOS region and a PMOS region, each region has a gate formed thereon. The method further includes covering the NMOS region with a first mask, forming a spacer for... Agent: Semiconductor Manufacturing International (beijing) Corporation

20130032888 - Semiconductor device having insulating film with different stress levels in adjacent regions and manufacturing method thereof: An n-channel MISFETQn is formed in an nMIS first formation region of a semiconductor substrate and a p-channel MISFETQp is formed in an adjacent pMIS second formation region of the semiconductor substrate. A silicon nitride film having a tensile stress is formed to cover the n-channel MISFETQn and the p-channel... Agent: Renesas Electronics Corporation

20130032889 - Silicon chip having through via and method for making the same: The present invention relates to a silicon chip including a silicon substrate, a passivation layer, at least one electrical device and at least one through via. The passivation layer is disposed on a first surface of the silicon substrate. The electrical device is disposed in the silicon substrate, and exposed... Agent: Advance Semiconductor Engineering, Inc.

20130032890 - Self-adjusting latch-up resistance for cmos devices: CMOS devices (60, 61, 61′) having improved latch-up robustness are provided by including with one or both WELL regions (22, 29) underlying the source-drains (24, 25; 31, 32) and the body contacts (27, 34), one or more further regions (62, 62′, 62-2) doped with deep acceptors or deep donors (or... Agent:

20130032892 - Bipolar transistor in bipolar-cmos technology: A process of forming an integrated circuit containing a bipolar transistor and an MOS transistor, by forming a base layer of the bipolar transistor using a non-selective epitaxial process so that the base layer has a single crystalline region on a collector active area and a polycrystalline region on adjacent... Agent: Texas Intruments Incorporated

20130032891 - Method of manufacturing an ic comprising a plurality of bipolar transistors and ic comprising a plurality of bipolar transistors: A method of manufacturing an integrated circuit comprising bipolar transistors including first and second type bipolar transistors, the method comprising providing a substrate comprising first isolation regions each separated from a second isolation region by an active region comprising a collector impurity of one of the bipolar transistors; forming a... Agent: Nxp B.v.

20130032893 - Semiconductor device comprising metal gate electrode structures and non-fets with different height by early adaptation of gate stack topography: Gate height scaling in sophisticated semiconductor devices may be implemented without requiring a redesign of non-transistor devices. To this end, the semiconductor electrode material may be adapted in its thickness above active regions and isolation regions that receive the non-transistor devices. Thereafter, the actual patterning of the adapted gate layer... Agent: Globalfoundries Inc.

20130032894 - Methods for normalizing strain in semicondcutor devices and strain normalized semiconductor devices: A method of normalizing strain in semiconductor devices and normalized strain semiconductor devices. The method includes: forming first and second field effect transistors of an integrated circuit; forming a stress layer over the first and second field effect transistors, the stress layer inducing strain in channel regions of the first... Agent: International Business Machines Corporation

20130032895 - High-voltage transistor device and associated method for manufacturing: A high-voltage transistor device comprises a spiral resistive field plate over a first well region between a drain region and a source region of the high-voltage transistor device, wherein the spiral resistive field plate is separated from the first well region by a first isolation layer, and is coupled between... Agent:

20130032896 - Semiconductor device and manufacturing method thereof: A semiconductor device includes a p-type semiconductor layer, n-type column regions formed of columnar thermal donors exhibiting an n-type property, a p-type column region interposed between the n-type column regions, the n-type column regions configured to form a super-junction structure in cooperation with the p-type column region, a channel region... Agent: Rohm Co., Ltd.

20130032898 - Metal-gate/high-k/ge mosfet with laser annealing and fabrication method thereof: The present invention discloses a metal-gate/high-κ/Ge MOSFET with laser annealing and a fabrication method thereof. The fabrication method comprises the following steps: forming a substrate; implanting a source area and a drain area on the substrate; activating the source area and the drain area by first laser light; depositing gate... Agent: National Chiao Tung University

20130032897 - Mosfet gate electrode employing arsenic-doped silicon-germanium alloy layer: A stack of a gate dielectric layer, a metallic material layer, an amorphous silicon-germanium alloy layer, and an amorphous silicon layer is deposited on a semiconductor substrate. In one embodiment, the amorphous silicon-germanium alloy layer is deposited as an in-situ amorphous arsenic-doped silicon-germanium alloy layer. In another embodiment, the amorphous... Agent: International Business Machines Corporation

20130032899 - Semiconductor device: An N-type MIS transistor includes an active region surrounded by an element isolation region in a semiconductor substrate, a gate insulating film formed on the active region and the element isolation region and having a high-k insulating film, and a gate electrode formed on the gate insulating film. An N-type... Agent: Panasonic Corporation

20130032900 - Buffer layer and method of forming buffer layer: Buffer layer and method of forming the buffer layer, the method including forming a high-k dielectric layer, forming a titanium nitride layer over the high-k dielectric layer, forming a silicon layer on the titanium nitride layer, annealing the silicon layer into the titanium nitride layer to form an annealed silicon... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130032901 - Full silicidation prevention via dual nickel deposition approach: Semiconductor devices are formed without full silicidation of the gates and with independent adjustment of silicides in the gates and source/drain regions. Embodiments include forming a gate on a substrate, forming a nitride cap on the gate, forming a source/drain region on each side of the gate, forming a first... Agent: Globalfoundries Inc.

20130032902 - Integrated circuit with sensor and method of manufacturing such an integrated circuit: Disclosed is an integrated circuit comprising a substrate (10) carrying a plurality of circuit elements; a metallization stack (12, 14, 16) interconnecting said circuit elements, said metallization stack comprising a patterned upper metallization layer comprising a first metal portion (20) and a second metal portion (21); a passivation stack (24,... Agent: Nxp B.v.

20130032903 - Integrated circuit with sensor and method of manufacturing such an integrated circuit: Disclosed is an integrated circuit comprising a substrate (10) carrying a plurality of circuit elements; a metallization stack (12, 14, 16) interconnecting said circuit elements, said metallization stack comprising a patterned upper metallization layer comprising a first metal portion (20) and a second metal portion (21); a passivation stack (24,... Agent: Nxp B.v.

20130032904 - Coated capacitive sensor: In one embodiment, a method of forming a MEMS device includes providing a substrate, forming a sacrificial layer above the substrate layer, forming a silicon based working portion on the sacrificial layer, releasing the silicon based working portion from the sacrificial layer such that the working portion includes at least... Agent: Robert Bosch Gmbh

20130032905 - Semiconductor package configured to electrically couple to a printed circuit board and method of providing same: In some examples, a semiconductor package can be configured to electrically couple to a printed circuit board. The semiconductor package can include: (a) a lid having one or more first electrically conductive leads; (b) a base coupled to the lid and having one or more second electrically conductive leads electrically... Agent: Ubotic Intellectual Property Co. Ltd.

20130032906 - Ferroelectric device: A ferroelectric device comprises: a silicon substrate (a first substrate); a lower electrode (a first electrode) formed on one surface side of first substrate; a ferroelectric film formed on a surface of lower electrode opposite to first substrate side; and an upper electrode (a second electrode) formed on a surface... Agent: Panasonic Corporation

20130032909 - Hall effect element having a wide cross shape with dimensions selected to result in improved performance characteristics: A Hall effect element includes a Hall plate having geometric features selected to result in a highest ratio of a sensitivity divided by a plate resistance. The resulting shape is a so-called “wide-cross” shape.... Agent: Allegro Microsystems, Inc.

20130032908 - Hybrid film for protecting mtj stacks of mram: A method includes patterning a plurality of magnetic tunnel junction (MTJ) layers to form a MTJ stack, and forming a first dielectric cap layer over a top surface and on a sidewall of the MTJ stack. The step of patterning and the step of forming the first dielectric cap layer... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130032911 - Magnetic memory device and fabrication method thereof: A vertical magnetic memory device includes a pinned layer including a plurality of first ferromagnetic layers that are alternately stacked with at least one first spacer, wherein the pinned layer is configured to have a vertical magnetization, a free layer including a plurality of second ferromagnetic layers that are alternately... Agent:

20130032910 - Magnetic memory device and method of manufacturing the same: A magnetic memory device includes a first fixing layer, a first tunnel barrier coupled to the first fixing layer, a free layer coupled to the first tunnel barrier and having a stacked structure including a first ferromagnetic layer, an oxide tunnel spacer, and a second ferromagnetic layer, a second tunnel... Agent:

20130032907 - Mram with sidewall protection and method of fabrication: BEOL memory cells are described that include one or more sidewall protection layers on the memory device (including, for example, an MTJ element) deposited prior to interconnect via etching to prevent the formation of electrical shorts between layers. One embodiment uses a single layer sidewall protection sleeve that is deposited... Agent:

20130032913 - Graphene structure, production method thereof, photoelectric conversion element, solar cell, and image pickup apparatus: A graphene structure includes a conductive layer and a protective layer. The conductive layer is formed of graphene doped with a dopant, and the protective layer is laminated on the conductive layer and formed of a material having a higher oxidation-reduction potential than water.... Agent: Sony Corporation

20130032912 - High-k dielectric liners in shallow trench isolations: A circuit structure includes a semiconductor substrate having a top surface. A dielectric material extends from the top surface into the semiconductor substrate. A high-k dielectric layer is formed of a high-k dielectric material, wherein the high-k dielectric layer comprises a first portion on a sidewall of the dielectric material,... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130032915 - Solid state imaging device and method for manufacturing the same: According to one embodiment, a solid state imaging device includes a substrate, and a plurality of interference filters. The substrate includes a plurality of photoelectric conversion units. The plurality of interference filters is provided individually for the plurality of photoelectric conversion units. The plurality of interference filters includes a plurality... Agent: Kabushiki Kaisha Toshiba

20130032914 - Solid-state imaging apparatus and electronic apparatus: A solid-state imaging apparatus including: a sensor substrate that has a plurality of pixels configured to receive incident light, the plurality of pixels being arranged on an upper surface of a semiconductor substrate; a transparent substrate that has a lower surface facing an upper surface of the sensor substrate and... Agent: Sony Corporation

20130032916 - Pad structures in bsi image sensor chips: An integrated circuit structure includes a semiconductor substrate, and a dielectric pad extending from a bottom surface of the semiconductor substrate up into the semiconductor substrate. A low-k dielectric layer is disposed underlying the semiconductor substrate. A first non-low-k dielectric layer is underlying the low-k dielectric layer. A metal pad... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130032917 - Solid-state image sensing apparatus: This invention provides a solid-state image sensing apparatus in which a sensor portion that performs photo-electric conversion and plural layers of wiring lines including a signal line for the sensor portion are formed on a semiconductor substrate; which includes an effective pixel portion configured such that light enters the sensor... Agent: Canon Kabushiki Kaisha

20130032918 - Image sensor and method for manufacturing the same: An image sensor may include a semiconductor substrate, a plurality of light receiving devices formed within the semiconductor substrate, and a plurality of device isolation films for isolating the light receiving devices from each other. When an arrangement direction of a pixel array may be formed by arranging the light... Agent: Dongbu Hitek Co., Ltd.

20130032919 - Solid-state image pickup element and electronic device: There is provided a solid-state image pickup element including a pixel array part in which a plurality of pixels are arranged on a silicon substrate in arrays, and a drive part driving the pixel. The pixel includes a photoelectric conversion part formed near a second face of the silicon substrate... Agent: Sony Corporation

20130032921 - Backside illuminated image sensor with stressed film: An image sensor includes a photosensitive region disposed within a semiconductor layer and a stress adjusting layer. The photosensitive region is sensitive to light incident through a first side of the image sensor to collect an image charge. The stress adjusting layer is disposed over the first side of the... Agent: Omnivision Technologies, Inc.

20130032920 - Pad structures formed in double openings in dielectric layers: An image sensor device includes a semiconductor substrate having a front side and a backside. A first dielectric layer is on the front side of the semiconductor substrate. A metal pad is in the first dielectric layer. A second dielectric layer is over the first dielectric layer and on the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130032922 - Integrated high voltage divider: An integrated circuit containing a voltage divider having an upper resistor of unsilicided gate material over field oxide around a central opening and a drift layer under the upper resistor, an input terminal coupled to an input node of the upper resistor adjacent to the central opening in the field... Agent: Texas Instruments Incorporated

20130032923 - Integrated inductor: A system and method for providing an integrated inductor with a high Quality factor (Q) is provided. An embodiment comprises a magnetic core that is in a center of a conductive spiral. The magnetic core increases the inductance of the integrated inductor to allow the inductor to be used in... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130032925 - Semiconductor device: A semiconductor device comprises a first external terminal having a first size, a plurality of second external terminals each having a second size smaller than the first size, an external terminal area in which the first external terminal and the second external terminals are arranged, and a plurality of wires... Agent: Elpida Memory, Inc.

20130032924 - Semiconductor device having cylindrical lower electrode of capacitor and manufacturing method thereof: To provide a semiconductor device including: plural capacitors each including a cylindrical lower electrode having an internal wall and an external wall, and an upper electrode that covers the external wall of the lower electrode via a capacitance dielectric film; and a supporting film having a buried portion buried in... Agent: Elpida Memory, Inc.

20130032926 - Adjustable resistor: An adjustable resistor formed on a first insulating layer of a substrate, including: a first polysilicon layer covered with a second insulating layer of a first thickness, except in a region where the first polysilicon layer is covered with a thin insulator layer of a second thickness smaller than the... Agent:

20130032927 - System for self-aligned contacts: A system for forming self-aligned contacts includes electroplating a first metal contact onto a Group III-V semiconductor substrate, the first metal contact having a greater height than width and having a straight sidewall profile, etching back the semiconductor substrate down to a base layer to expose an emitter semiconductor layer... Agent:

20130032928 - Group iii nitride composite substrate: A group III nitride composite substrate includes a support substrate, an oxide film formed on the support substrate, and a group III nitride layer formed on the oxide film. The oxide film may be a film selected from the group consisting of a TiO2 film and a SrTiO3 film, and... Agent: Sumitomo Electric Industries, Ltd.

20130032929 - Method of protecting deep trench sidewall from process damage: Method of protecting a liner in a previously formed deep trench module from subsequent processing steps, and resulting structure. A deep trench module includes a deep trench with one or more liner films and a fill material in an SOI substrate. A mask layer is patterned to form first and... Agent: International Business Machines Corporation

20130032930 - Semiconductor device comprising through-electrode interconnect: A semiconductor device having a through electrode excellent in performance as for an electrode and manufacturing stability is provided. There is provided a through electrode composed of a conductive small diameter plug and a conductive large diameter plug on a semiconductor device. A cross sectional area of the small diameter... Agent: Renesas Electronics Corporation

20130032931 - Layer structure with emi shielding effect: A layer structure with an electromagnetic interference (EMI) shielding effect is applicable for reducing an EMI effect caused by signal transmission between through silicon vias, so as to effectively provide the EMI shielding effect between electrical interconnections of a three-dimensional (3D) integrated circuit. By forming EMI-shielding through silicon vias at... Agent: Siliconware Precision Industries Co., Ltd.

20130032932 - Bonded wire semiconductor device: A bonded wire semiconductor device includes a sub-assembly including a semiconductor die having an active face with a set of internal electrical contact elements and an externally exposed set of electrical contact elements. A set of bond wires make respective electrical connections between the internal electrical contact elements and the... Agent: Freescale Semiconductor, Inc

20130032933 - Epoxy resin composition for optical semiconductor device, lead frame for optical semiconductor device and substrate for optical semiconductor device obtained using the same, and optical semiconductor device: The present invention relates to an epoxy resin composition for an optical semiconductor device, including the following ingredients (A) to (E): (A) an epoxy resin; (B) a curing agent; (C) a white pigment; (D) an inorganic filler; and (E) a silane coupling agent, in which a total content of the... Agent: Nitto Denko Corporation

20130032934 - Packaged microelectronic elements having blind vias for heat dissipation: System and method for thermal management in a multi-chip packaged device. A microelectronic unit is disclosed, and includes a semiconductor element having a top surface and a bottom surface remote from the top surface. A semiconductor device including active elements is located adjacent to the top surface. Operation of the... Agent: Tessera Inc.

20130032935 - Implementing enhanced thermal conductivity in stacked modules: A method and structures are provided for implementing enhanced thermal conductivity between a lid and heat sink for stacked modules. A chip lid and lateral heat distributor includes cooperating features for implementing enhanced thermal conductivity. The chip lid includes a groove along an inner side wall including a flat wall... Agent: International Business Machines Corporation

20130032936 - Package for a mems sensor and manufacturing process thereof: A packaged MEMS device, wherein at least two support structures are stacked on each other and are formed both by a support layer and a wall layer coupled to each other and delimiting a respective chamber. The chamber of the first support structure is upwardly delimited by the support layer... Agent: Stmicroelectronics Ltd (malta)

20130032937 - Semiconductor device and associated method: The invention provides a semiconductor device and associated method, which includes a substrate, a first die, multiple sub-package systems surrounding the first die, and a heat spreader. The first die and the sub-package systems are installed on a same surface of the substrate, wherein projections of the first die and... Agent: Global Unichip Corporation

20130032939 - Chip package structure: A chip package structure includes a flexible substrate having a chip mounting region, a plurality of leads disposed on the flexible substrate, an insulating layer and a chip. Each lead includes a body portion and an inner lead portion connected to each other. The body portion is located outside the... Agent: Chipmos Technologies Inc.

20130032940 - Chip package structure: A chip package structure includes a chip, a flexible substrate, first leads and second leads. First bumps, second bumps and a seal ring are disposed on an active surface of the chip. The first and second bumps are respectively adjacent to first and second edges of the chip. The seal... Agent: Chipmos Technologies Inc.

20130032941 - Routing layer for mitigating stress in a semiconductor die: A routing layer for a semiconductor die is disclosed. The routing layer includes traces interconnecting integrated circuit bond-pads to UBMs. The routing layer is formed on a layer of dielectric material. The routing layer includes conductive traces arranged underneath the UBMs as to absorb stress from solder bumps attached to... Agent: Ati Technologies Ulc

20130032938 - Three dimensional semiconductor assembly board with bump/flange supporting board, coreless build-up circuitry and built-in electronic device: A semiconductor assembly board includes a supporting board, a coreless build-up circuitry and a built-in electronic device. The supporting board includes a bump, a flange and a via hole in the bump. The built-in electronic device extends into the via hole and is electrically connected to the build-up circuitry. The... Agent:

20130032942 - Semiconductor device and manufacturing method therefor: A semiconductor device includes a circuit substrate, a first semiconductor chip disposed on the circuit substrate, a plurality of first spacers disposed on the first semiconductor chip, a second semiconductor chip which includes a first adhesive agent layer on a lower face thereof and is disposed on upper portions of... Agent: Fujitsu Semiconductor Limited

20130032943 - Semiconductor device: A semiconductor device includes a semiconductor chip which includes a first circuit and a second circuit that are spaced apart from each other, without internal wirings electrically connecting the first circuit and the second circuit to each other, a substrate on which the semiconductor chip is disposed, and substrate wirings... Agent: Samsung Electronic Co.,ltd.

20130032946 - Laser-assisted cleaving of a reconstituted wafer for stacked die assemblies: A method of forming stacked die devices includes attaching first semiconductor die onto a wafer to form a reconstituted wafer, and then bonding second semiconductor die onto the first semiconductor die to form a plurality of singulated stacked die devices on the wafer. A support tape is attached to a... Agent: Texas Instruments Incorporated

20130032944 - Microelectronic package with stacked microelectronic elements and method for manufacture thereof: A microelectronic package may include a stacked microelectronic unit including at least first and second vertically stacked microelectronic elements each having a front face facing a top surface of the package. The front face of the first element may be adjacent the top surface, and the first element may overlie... Agent: Tessera, Inc.

20130032945 - Self-aligned fine pitch permanent on-chip interconnect structures and method of fabrication: An interconnect structure and methods for making the same include sidewall portions of an interlevel dielectric layer. The sidewall portions have a width less than a minimum feature size for a given lithographic technology and the width is formed by a thickness of the interlevel dielectric layer when conformally formed... Agent: International Business Machines Corporation

20130032949 - Self-aligned fine pitch permanent on-chip interconnect structures and method of fabrication: An interconnect structure and methods for making the same include sidewall portions of an interlevel dielectric layer. The sidewall portions have a width less than a minimum feature size for a given lithographic technology and the width is formed by a thickness of the interlevel dielectric layer when conformally formed... Agent: International Business Machines Corporation

20130032948 - Semiconductor device including substrate having grooves: A semiconductor device including a substrate having grooves is provided. The semiconductor device includes a substrate including a first surface, a second surface opposite to the first surface, an opening penetrating from the first surface to the second surface, and a first groove formed at a side of the opening,... Agent:

20130032947 - Semiconductor package and method of manufacturing the same: A semiconductor package that stably protects an internal semiconductor chip from external shocks, and a method of manufacturing the semiconductor package is disclosed. The semiconductor package includes a first semiconductor chip including a first body layer having a first surface, a second surface, and a lateral surface between the first... Agent:

20130032950 - Techniques for interconnecting stacked dies using connection sites: An integrated circuit die includes conductive connection sites located at least on a surface of the integrated circuit die within a contiguous region thereof. The integrated circuit also includes a core circuit located outside the contiguous region. The core circuit is coupled to at least one of the connection sites.... Agent: Rambus Inc.

20130032951 - Semiconductor device comprising variable-sized contact, method of forming same, and apparatus comprising same: A semiconductor device comprises an electrical contact designed to reduce a contact resistance. The electrical contact has a size that varies according to a length of a region where the contact is to be formed.... Agent: Samsung Electronics Co., Ltd.

20130032953 - Method of manufacturing a plurality of electronic assemblies: A method of manufacturing a plurality of electronic devices is provided. Each one of a plurality of first conductive terminals on a plurality of integrated circuits formed on a device wafer is connected to a respective one of a plurality of second conductive terminals on a carrier wafer, thereby forming... Agent:

20130032952 - Semiconductor device and method of forming pop with stacked semiconductor die and bumps formed directly on the lower die: A semiconductor device has a first semiconductor wafer mounted to a carrier. A second semiconductor wafer is mounted to the first semiconductor wafer. The first and second semiconductor wafers are singulated to separate stacked first and second semiconductor die. A peripheral region between the stacked semiconductor die is expanded. A... Agent: Stats Chippac, Ltd.

20130032954 - Stackable integrated circuit package system: A stacked integrated circuit package-in-package system is provided including forming a first external interconnect; mounting a first integrated circuit die below the first external interconnect; stacking a second integrated circuit die over the first integrated circuit die in an offset configuration not over the first external interconnect; connecting the first... Agent: Stats Chippac Ltd.

20130032955 - Low-k dielectric layer and porogen: A system and method for a low-k dielectric layer are provided. A preferred embodiment comprises forming a matrix and forming a porogen within the matrix. The porogen comprises an organic ring structure with fewer than fifteen carbons and a large percentage of single bonds. Additionally, the porogen may have a... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130032956 - Semiconductor device and method for manufacturing the same: A method for manufacturing a semiconductor device includes a first photolithography step of forming a first device pattern corresponding to a first pattern, and a plurality of alignment marks corresponding to a plurality of marks, upon a step of exposing the entire device region in one shot using a first... Agent: Canon Kabushiki Kaisha