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Active solid-state devices (e.g., transistors, solid-state diodes) January recently filed with US Patent Office 01/13

20130026434 - Memristor with controlled electrode grain size: A memristor with a controlled electrode grain size includes an adhesion layer, a first electrode having a first surface contacting the adhesion layer and a second surface opposite the first surface, in which the first electrode is formed of an alloy of a base material and at least one second... Agent:

20130026435 - Switching device and resistance change memory device using the same: A switching device that provides bipolar current paths and a resistance change memory device using the switching device. The switching device includes a first electrode, a second electrode, and an amorphous carbon layer interposed between the first electrode and the second electrode and configured to control a bipolar current to... Agent:

20130026438 - Current-limiting layer and a current-reducing layer in a memory device: A current-limiting layer and a current-reducing layer are incorporated into a resistive switching memory device to form memory arrays. The incorporated current-limiting layer reduces the occurrence of current spikes during the programming of the resistive switching memory device and the incorporated current-reducing layer minimizes the overall current levels that can... Agent: Intermolecular, Inc.

20130026440 - Nanoscale switching devices with partially oxidized electrodes: A nanoscale switching device is provided. The device comprises: a first electrode of a nanoscale width; a second electrode of a nanoscale width; an active region disposed between the first and second electrodes, the active region having a non-conducting portion comprising an electronically semiconducting or nominally insulating and a weak... Agent:

20130026436 - Phase change memory electrode with sheath for reduced programming current: An example embodiment is a phase change memory cell that includes a bottom contact and an electrically insulating layer disposed over the bottom contact. The electrically insulating layer defines an elongated via. Furthermore, a bottom electrode is disposed at least partially in the via. The bottom electrode includes a sleeve... Agent: International Business Machines Corporation

20130026437 - Resistance variable memory device and method for fabricating the same: A method for fabricating a resistance variable memory device, includes: providing a substrate having first contacts and second contacts, where the second contacts do not overlap the first contacts; forming a line pattern over the substrate, the line pattern overlapping a first line and including a stacked structure of a... Agent:

20130026439 - Semiconductor device and method of fabricating the same: Provided are semiconductor devices and methods of fabricating the same. The device may include lower interconnection lines, upper interconnection lines crossing the lower interconnection lines, selection elements disposed at intersections, respectively, of the lower and upper interconnection lines, and memory elements interposed between the selection elements and the upper interconnection... Agent: Samsung Electronics Co., Ltd

20130026441 - Apparatus and associated methods related to detection of electromagnetic signalling: In one or more embodiments described herein, there is provided an apparatus including a first layer for detecting electromagnetic signalling, and a second layer positioned proximate to the first layer. The first layer includes graphene, and the second layer is configured to undergo plasmonic resonance in response to receiving electromagnetic... Agent: Nokia Corporation

20130026442 - Photodetector: A photodetector includes: a substrate; a first dielectric material positioned on the substrate; an optical waveguide positioned on the first dielectric material; a second dielectric material positioned on the optical waveguide; a graphene layer positioned on the second dielectric material; and a first electrode and a second electrode that are... Agent: Electronics And Telecommunications Research Institute

20130026443 - Silicon nanowire comprising high density metal nanoclusters and method of preparing the same: A silicon nanowire including metal nanoclusters formed on a surface thereof at a high density. The metal nanocluster improves electrical and optical characteristics of the silicon nanowire, and thus can be usefully used in various electrical devices such as a lithium battery, a solar cell, a bio sensor, a memory... Agent:

20130026444 - Synthesizing graphene from metal-carbon solutions using ion implantation: A method and semiconductor device for synthesizing graphene using ion implantation of carbon. Carbon is implanted in a metal using ion implantation. After the carbon is distributed in the metal, the metal is annealed and cooled in order to precipitate the carbon from the metal to form a layer of... Agent: Board Of Regents, The University Of Texas System

20130026448 - Light emitting diode (led) die having peripheral electrode frame and method of fabrication: A light emitting diode (LED) die includes a first-type semiconductor layer, a multiple quantum well (MQW) layer and a second-type semiconductor layer. The light emitting diode (LED) die also includes a peripheral electrode on the first-type semiconductor layer located proximate to an outer periphery of the first-type semiconductor layer configured... Agent: Semileds Optoelectronics Co., Ltd.

20130026445 - Quantum dot optoelectronic device and methods therefor: An optoelectronic device and method for fabricating optoelectronic device, comprising: forming a quantum dot layer on a substrate including at least one electronically conductive layer, including a plurality of quantum dots which have organic capping layers; and removing organic capping layers from the quantum dots of the quantum dot layer... Agent:

20130026446 - Semiconductor light emitting device and fabrication method thereof: A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes: first and second conductivity-type semiconductor layers; and an active layer disposed between the first and second conductivity-type semiconductor layers and having a structure in which a quantum barrier layer and a quantum... Agent: Samsung Electronics Co., Ltd.

20130026447 - Surface-emitting semiconductor light-emitting diode: The invention is directed to a surface emitting semiconductor light-emitting diode (LED) in which a reflector layer (4) of the first conductivity type is provided between a substrate (2) and a first barrier layer (5). A first contact layer (9) has at least one emitting surface (13) via which radiation... Agent:

20130026449 - Hybrid cmos technology with nanowire devices and double gated planar devices: A substrate includes a first source region and a first drain region each having a first semiconductor layer disposed on a second semiconductor layer and a surface parallel to {110} crystalline planes and opposing sidewall surfaces parallel to the {110} crystalline planes; nanowire channel members suspended by the first source... Agent: International Business Machines Corporation

20130026451 - Hybrid cmos technology with nanowire devices and double gated planar devices: A substrate includes a first source region and a first drain region each having a first semiconductor layer disposed on a second semiconductor layer and a surface parallel to {110} crystalline planes and opposing sidewall surfaces parallel to the {110} crystalline planes; nanowire channel members suspended by the first source... Agent: International Business Machines Corporation

20130026450 - Nitride-based heterojuction semiconductor device and method for the same: Disclosed is a semiconductor device. More specifically, disclosed are a nitride-based heterojunction semiconductor device and a method for producing the same. The nitride-based heterojunction semiconductor device includes a nitride semiconductor buffer layer, a barrier layer disposed on the buffer layer, a cap layer discontinuously disposed on the barrier layer, a... Agent:

20130026458 - Crosslinkable composition: The composition comprises an aromatic polycarbonyl compound having a carbonyl group as a reactive site, and at least one aromatic reactive component selected from an aromatic polyamine having an amino group as a reactive site, and an aromatic heterocyclic compound having a plurality of unmodified α-carbon positions, as reactive sites,... Agent: Daicel Corporation

20130026452 - Heteroleptic iridium complexes as dopants: Novel phosphorescent heteroleptic iridium complexes with phenylpyridine and dibenzo-containing ligands are provided. Alkyl substitution at specific positions on the ligands gives rise to compounds with improved OLED properties, including saturated green emission.... Agent: Universal Display Corporation

20130026455 - Hybrid organic-inorganic thin film and producing method of the same: The present disclosure relates to a hybrid organic-inorganic thin film producing method including an interlayer connection between an inorganic cross-linked layer and an organic polymer through a molecular layer deposition (MLD) method, a hybrid organic-inorganic thin film produced by the producing method, and an organic electronic device and a thin... Agent: Industry-university Cooperation Foundation Hanyang University

20130026460 - Light-emitting element, light-emitting device, and electronic device: Disclosed is a light-emitting element having a light-emitting layer which includes a first layer, a second layer, and a third layer provided in this order on an anode side between the anode and a cathode. The first layer has a hole-transporting property, the second layer has a bipolar property, and... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130026453 - Methods of polymerizing silanes and cyclosilanes using n-heterocyclic carbenes, metal complexes having n-heterocyclic carbene ligands, and lanthanide compounds: Compositions and methods for controlled polymerization and/or oligomerization of silane (and optionally cyclosilane) compounds, including those of the general formulae SinH2n and SinH2n+2, as well as halosilanes and arylsilanes, to produce soluble polysilanes, polygermanes and/or polysilagermanes having low levels of carbon and metal contaminants, high molecular weights, low volatility, high... Agent:

20130026461 - Organic led element, translucent substrate, and method for manufacturing organic led element: The present invention provides an organic LED element having the significantly larger light emission area than conventional ones. The invention relates to an organic LED element, comprising: a transparent substrate; a light scattering layer; a transparent first electrode; an organic light-emitting layer; and a second electrode formed in this order,... Agent: Asahi Glass Company, Limited

20130026456 - Organic light emitting diode display: An organic light emitting diode display, which includes: a first electrode; a second electrode facing the first electrode; and an emission layer interposed between the first electrode and the second electrode. Herein the first electrode includes: a first layer including a material having a work function of about 4.0 eV... Agent:

20130026454 - Photosensor and photodiode therefor: According to example embodiments, a photodiode includes a photoelectric layer on a first electrode, a second electrode on the photoelectric layer, and a first phosphorescence layer on the second electrode.... Agent: Samsung Electronics Co., Ltd.

20130026457 - Polymer blend, organic light-emitting diode including polymer blend, and method of controlling charge mobility of emission layer including polymer blend: c

20130026459 - Polymer compound: (wherein, X1 and X2 are the same or different and represent a nitrogen atom or ═CH—. Y1 represents a sulfur atom, an oxygen atom, a selenium atom, —N(R1)— or —CR2═CR3—. R1, R2 and R3 are the same or different and represent a hydrogen atom or a substituent. W1 represents a... Agent: Sumitomo Chemical Company, Limited

20130026463 - Electronic device and manufacturing method for same: The present invention is an electronic device comprising a first substrate, a second substrate arranged opposite the first substrate, a sealed portion arranged between the first substrate and the second substrate, and a sealing portion that connects the first and the second substrate and is provided around the sealed portion,... Agent:

20130026462 - Method for manufacturing thin film transistor and thin film transistor manufactured by the same, and active matrix substrate: A method for manufacturing a thin film transistor includes the step of forming a gate electrode (11aa) on an insulating substrate, the step of forming a gate insulating layer (12) to cover the gate electrode (11aa), and thereafter, forming an oxide semiconductor layer (13a) on the gate insulating layer (12),... Agent: Sharp Kabushiki Kaisha

20130026467 - Dual metal for a backside package of backside illuminated image sensor: A method for fabricating a semiconductor device with improved bonding ability is disclosed. The method comprises providing a substrate having a front surface and a back surface; forming one or more sensor elements on the front surface of the substrate; forming one or more metallization layers over the front surface... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130026465 - Semiconductor device including an asymmetric feature, and method of making the same: A semiconductor device (e.g., field effect transistor (FET)) having an asymmetric feature, includes a first gate formed on a substrate, first and second diffusion regions formed in the substrate on a side of the first gate, and first and second contacts which contact the first and second diffusion regions, respectively,... Agent: International Business Machines Corporation

20130026464 - Test pattern for measuring semiconductor alloys using x-ray diffraction: A test pattern for measuring semiconductor alloys using X-ray diffraction (XRD) includes a first region to an Nth region defined on a wafer, and a plurality of test structures positioned in the first region and so forth up to in the Nth region. The test structures in the same region... Agent:

20130026466 - Testing architecture of circuits integrated on a wafer: An embodiment of a testing architecture of integrated circuits on a wafer is described of the type including at least one first circuit of a structure TEG realized in a scribe line providing separation between at least one first and one second integrated circuit. The architecture includes at least one... Agent: Stmicroelectronics S.r.l.

20130026468 - Radiation detector and method of manufacturing the same: A graphite substrate is processed to have surface unevenness in a range of 1 μm to 8 μm. Thereby, a semiconductor film to be laminated on the graphite substrate has a stable film quality, and thus adhesion of the graphite substrate and the semiconductor layer can be enhanced. When an... Agent: Shimadzu Corporation

20130026469 - Silicon wafers and ingots with reduced oxygen content and methods for producing them: Silicon nitride coated crucibles for holding melted semiconductor material and for use in preparing multicrystalline silicon ingots by a directional solidification process; methods for coating crucibles; methods for preparing silicon ingots and wafers; compositions for coating crucibles and silicon ingots and wafers with a low oxygen content.... Agent:

20130026470 - Wiring structure, display apparatus, and semiconductor device: Disclosed is a wiring structure that attains excellent low-contact resistance even if eliminating a barrier metal layer that normally is disposed between a Cu alloy wiring film and a semiconductor layer, and wiring structure with excellent adhesion. The wiring structure is provided with a semiconductor layer, and a Cu alloy... Agent: Kabushiki Kaisha Kobe Seiko Sho (kobe Steel, Ltd.)

20130026471 - Circuit structures, memory circuitry, and methods: A circuit structure includes a substrate having an array region and a peripheral region. The substrate in the array and peripheral regions includes insulator material over first semiconductor material, conductive material over the insulator material, and second semiconductor material over the conductive material. The array region includes vertical circuit devices... Agent:

20130026473 - Pixel structure and method for fabricating the same: A pixel structure includes a first patterned metal layer, a gate insulating layer, a semiconductor channel layer, a second patterned metal layer, a passivation layer, and a conducting layer. A gate line of the second patterned metal layer is electrically connected by the conducting layer to a gate extension electrode... Agent: Au Optronics Corporation

20130026472 - Tft structure and pixel structure: A pixel structure including a substrate, a gate, an insulation layer, a metal oxide semiconductor (MOS) layer, a source and a drain, at least one film layer, and a first electrode layer is provided. The gate is disposed on the substrate. The insulation layer covers the gate. The MOS layer... Agent: Au Optronics Corporation

20130026478 - Display unit and substrate for display unit: A display unit includes, on a substrate: a plurality of light emitting devices in which a first electrode, an organic layer including a light emitting layer, and a second electrode are respectively and sequentially layered; and a black insulating layer separating the organic layer for the every light emitting device.... Agent: Sony Corporation

20130026477 - Flat panel display device and method of manufacturing the same: A flat panel display device includes a substrate having an emission area in which an image is displayed and a pad area that is outside of the emission area, a semiconductor layer on the substrate, and the semiconductor layer has crystallization areas and amorphous areas. An electrostatic protecting circuit is... Agent:

20130026476 - Organic light emitting display apparatus: An organic light emitting display apparatus includes a substrate on which a display area and a non-display area are defined, a first electrode on the substrate, an intermediate layer on the first electrode, the intermediate layer includes an organic emission layer, a second electrode on the intermediate layer, a plurality... Agent:

20130026475 - Organic light-emitting display device and method of manufacturing the same: An organic light-emitting display device includes a capacitor lower electrode that includes a semiconductor material doped with ion impurities. A first insulating layer covers an active layer and the capacitor lower electrode. A gate electrode includes a gate lower electrode formed of a transparent conductive material and a gate upper... Agent: Samsung Mobile Display Co., Ltd.

20130026474 - Storage capacitor architecture for pixel structure and manufacturing method thereof: A storage capacitor architecture for pixel structure and manufacturing method thereof are described. The storage capacitor architecture includes a substrate, a first electrode, an insulating layer and a second electrode. The first electrode has a first concave and convex structure. The insulating layer is disposed on the first concave and... Agent: Shenzhen China Star Optoelectronics Technology Co. Ltd

20130026479 - Semiconductor thin-film forming method, semiconductor device, semiconductor device manufacturing method, substrate, and thin-film substrate: A semiconductor thin-film manufacturing method includes: forming, above a substrate, an amorphous silicon film (precursor film) having a photoluminescence (PL) intensity greater than or equal to 0.65 when photon energy is 1.1 eV in a PL spectrum normalized to have a maximum PL intensity of 1; and annealing the amorphous... Agent: Panasonic Corporation

20130026482 - Boron-containing buffer layer for growing gallium nitride on silicon: A silicon wafer used in manufacturing GaN for LEDs includes a silicon substrate, a buffer layer of boron aluminum nitride (BxAl1-xN) and an upper layer of GaN, for which 0.35≦x≦0.45. The BAlN forms a wurtzite-type crystal with a cell unit length about two-thirds of a silicon cell unit length on... Agent: Bridgelux, Inc.

20130026486 - Epitaxial substrate and method for manufacturing epitaxial substrate: Provided is a crack-free epitaxial substrate having excellent breakdown voltage properties in which a silicon substrate is used as a base substrate thereof. The epitaxial substrate includes: a (111) single crystal Si substrate and a buffer layer including a composition modulation layer that is formed of a first composition layer... Agent: Ngk Insulators, Ltd.

20130026488 - Epitaxial substrate and method for manufacturing epitaxial substrate: Provided is a crack-free epitaxial substrate having excellent breakdown voltage properties in which a silicon substrate is used as a base substrate thereof. The epitaxial substrate includes: a (111) single crystal Si substrate and a buffer layer including a plurality of composition modulation layers each formed of a first composition... Agent: Ngk Insulators, Ltd.

20130026483 - Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices: A gallium and nitrogen containing optical device has a base region and no more than three major planar side regions configured in a triangular arrangement provided from the base region.... Agent: Soraa, Inc.

20130026484 - Multi-color light emitting devices with compositionally graded cladding group iii-nitride layers grown on substrates: A light emitting device includes a substrate, multiple n-type layers, and multiple p-type layers. The n-type layers and the p-type layers each include a group III nitride alloy. At least one of the n-type layers is a compositionally graded n-type group III nitride, and at least one of the p-type... Agent: Rosestreet Labs Energy, Inc.

20130026487 - Nitride semiconductor light emitting element: l

20130026480 - Nucleation of aluminum nitride on a silicon substrate using an ammonia preflow: A silicon wafer used in manufacturing crystalline GaN for light emitting diodes (LEDs) includes a silicon substrate, a buffer layer of aluminum nitride (AlN) and an upper layer of GaN. The silicon wafer has a diameter of at least 200 millimeters and an Si(111)1×1 surface. The AlN buffer layer overlies... Agent: Bridgelux, Inc.

20130026485 - Power semiconductor device: A power semiconductor device is provided. The power semiconductor device includes a source electrode disposed on a device activation region and widened in a direction toward a first side, a drain electrode arranged alternately with the source electrode on the device activation region and widened in a direction toward a... Agent: Samsung Electronics Co., Ltd.

20130026481 - Textured optoelectronic devices and associated methods of manufacture: Textured optoelectronic devices and associated methods of manufacture are disclosed herein. In several embodiments, a method of manufacturing a solid state optoelectronic device can include forming a conductive transparent texturing material on a substrate. The method can further include forming a transparent conductive material on the texturing material. Upon heating... Agent: Micron Technology, Inc.

20130026489 - Aln buffer n-polar gan hemt profile: An N-face GaN HEMT device including a semiconductor substrate, a buffer layer including AlN or AlGaN deposited on the substrate, a barrier layer including AlGaN or AlN deposited on the buffer layer and a GaN channel layer deposited on the barrier layer. The channel layer, the barrier layer and the... Agent: Northrop Grumman Systems Corporation

20130026492 - Diamond semiconductor system and method: Disclosed herein is a new and improved system and method for fabricating diamond semiconductors. The system may include a diamond material having n-type donor atoms and a diamond lattice, wherein 0.16% of the donor atoms contribute conduction electrons with mobility greater than 770 cm2/Vs to the diamond lattice at 100... Agent: Akhan Technologies Inc.

20130026490 - Glass/ceramics replacement of epoxy for high temperature hermetically sealed non-axial electronic packages: A high temperature, non-cavity package for non-axial electronics is designed using a glass ceramic compound with that is capable of being assembled and operating continuously at temperatures greater that 300-400° C. Metal brazes, such as silver, silver colloid or copper, are used to connect the semiconductor die, lead frame and... Agent:

20130026495 - Iii-nitride metal insulator semiconductor field effect transistor: A field effect transistor (FET) includes a III-Nitride channel layer, a III-Nitride barrier layer on the channel layer, wherein the barrier layer has an energy bandgap greater than the channel layer, a source electrode electrically coupled to one of the III-Nitride layers, a drain electrode electrically coupled to one of... Agent: Hrl Loboratories, LLC

20130026491 - Led structure and method for manufacturing thereof: The present invention discloses a LED structure and a method for manufacturing the LED structure. The LED structure includes a substrate, a reflection layer, a first conducting layer, a light emitting layer, and a second conducting layer. The substrate has a plurality of grooves, and the reflection layer is disposed... Agent: Lextar Electronics Corp.

20130026496 - Semiconductor device and manufacturing method thereof: A method for manufacturing a semiconductor device, comprising forming a tunneling dielectric layer, a storage dielectric layer, a gate dielectric layer and a gate layer sequentially on a semiconductor substrate of a first semiconductor material; patterning the tunneling dielectric layer, the storage dielectric layer, the gate dielectric layer and the... Agent:

20130026493 - Sic devices with high blocking voltage terminated by a negative bevel: The present disclosure relates to a Silicon Carbide (SiC) semiconductor device having both a high blocking voltage and low on-resistance. In one embodiment, the semiconductor device has a blocking voltage of at least 10 kilovolts (kV) and an on-resistance of less than 10 milli-ohms centimeter squared (mΩ·cm2) and even more... Agent: Cree, Inc.

20130026494 - Silicon carbide semiconductor device: An SiC semiconductor device includes a semiconductor element formed in an SiC substrate, a source electrode and a gate pad formed by using an interconnect layer having barrier metal provided at the bottom surface thereof, and a temperature measuring resistive element formed by using part of the barrier metal in... Agent: Mitsubishi Electric Corporation

20130026497 - Silicon carbide substrate manufacturing method and silicon carbide substrate: Silicon carbide single crystal is prepared. Using the silicon carbide single crystal as a material, a silicon carbide substrate having a first face and a second face located at a side opposite to the first face is formed. In the formation of the silicon carbide substrate, a first processed damage... Agent: Sumitomo Electric Industries, Ltd.

20130026498 - Substrate assembly for crystal growth and fabricating method for light emitting device using the same: A substrate assembly on which a first conduction-type semiconductor layer, an active layer and a second conduction-type semiconductor layer are formed is disclosed, the substrate assembly comprising a first substrate, a second substrate and a bonding layer interposed there between. In the substrate assembly, the thermal expansion coefficient of the... Agent: Seoul Opto Device Co., Ltd.

20130026505 - Large area organic light emitting diode display: The invention relates to a large area organic light emitting diode display having a uniformed luminescence throughout the display area. The invention suggests an organic light emitting diode display comprising a thin film transistor substrate including a thin film transistor, a driving current line to supply an electric signal to... Agent: Lg Display Co., Ltd.

20130026508 - Led module with passive led: An LED module (1) includes a plurality of LEDs (76 to 89) which are arranged on a printed circuit board (75) and which each have a “bedding element” with a lens (100 to 113) with which the respective LED (76 to 89) protrudes from the printed circuit board plane. The... Agent:

20130026502 - Light emitting device package and light emitting system: A light emitting device package according to the embodiment includes a body having a cavity; at least one light emitting device in the cavity; a resin member filled in the cavity while covering the light emitting device; and a fluorescence sheet coupled with a top surface of the body such... Agent: Lg Innotek Co., Ltd.

20130026500 - Light emitting device package and lighting system using the same: A light emitting device package of the embodiment includes a body including cavities; first and second lead electrodes disposed in the cavity of the body; a light emitting device disposed in the cavities, electrically connected to at least one of the first and second lead electrodes and emitting a first... Agent:

20130026503 - Light emitting diode display and manufacturing method thereof: An organic light emitting diode (OLED) display includes a substrate, an OLED on the substrate, and an encapsulation layer on the substrate with the OLED therebetween. The encapsulation layer includes a plurality of metal layers. Two of the plurality of metal layers are directly attached to each other.... Agent:

20130026504 - Lighting device utilizing light active sheet material with integrated light emitting diode, disposed in seam and/or in low profile application: A light source includes a substrate arranged into at least two facing surfaces which form a seam therebetween; and a lighting device with light emitting diode (LED) chips embedded therein in a linear arrangement. The LED chips generate light photons. The lighting device has a first edge and a second... Agent: Grote Industries, LLC

20130026506 - Lighting devices with prescribed colour emission: Optical conversion layers based on semiconductor nanoparticles for use in lighting devices, and lighting devices including same. In various embodiments, spherical core/shell seeded nanoparticles (SNPs) or nanorod seeded nanoparticles (RSNPs) are used to form conversion layers with superior combinations of high optical density (OD), low re-absorbance and small FRET. In... Agent:

20130026507 - Multichip package structure and method of manufacturing the same: A method of manufacturing a multichip package structure includes: providing a substrate body; placing a plurality of light-emitting chips on the substrate body, where the light-emitting chips are electrically connected to the substrate body; surroundingly forming surrounding liquid colloid on the substrate body to surround the light-emitting chips; naturally drying... Agent: Paragon Semiconductor Lighting Technology Co., Ltd.

20130026509 - Three-dimensional led substrate and led lighting device: The invention includes one or more LED elements, a silicon substrate on which the LED elements are mounted via micro bumps and internally formed wiring is connected to the micro bumps, a heat insulation organic substrate which is stuck to the opposite side of the LED elements-mounting side of the... Agent: Liquid Design Systems, Inc.

20130026501 - Touch display device and manufacturing method thereof: The present invention discloses a touch display device and a manufacturing method thereof, the display device comprising: an OLED display layer disposed on a lower substrate; an upper substrate; an air layer formed between the upper substrate and the lower substrate; and a touch module, disposed above the OLED display... Agent:

20130026499 - Wafer-level packaging for solid-state transducers and associated systems and methods: Wafer-level packaging of solid-state transducers (“SSTs”) is disclosed herein. A method in accordance with a particular embodiment includes forming a transducer structure having a first surface and a second surface opposite the first surface, and forming a plurality of separators that extend from at least the first surface of the... Agent: Micron Technology, Inc.

20130026510 - Light emitting diode device: A light emitting diode (LED) device includes a substrate, first and second LED chips arranged on the substrate, and a phosphor layer over the first and second LED chips. The phosphor layer includes a plurality of phosphor units, each including a phosphor particle and a silver halide layer encapsulating the... Agent: Advanced Optoelectronic Technology, Inc.

20130026511 - Transfer-bonding method for the light emitting device and light emitting device array: A transfer-bonding method for light emitting devices including following steps is provided. A plurality of light emitting devices is formed over a first substrate and is arranged in array, wherein each of the light emitting devices includes a device layer and a sacrificial pattern sandwiched between the device layer and... Agent: Industrial Technology Research Institute

20130026512 - Led mirror light assembly: A LED mirror light assembly comprises a body having a through hole configured subject to a predetermined shape and located on a middle part thereof, a film-coated glass configured subject to shape of the through hole and supported on a first step, a LED holder holding a plurality of light-emitting... Agent:

20130026523 - Chip package and method for forming the same: An embodiment of the invention provides a chip package which includes: a substrate having a first surface and a second surface; an optoelectronic device formed in the substrate; a conducting layer disposed on the substrate, wherein the conducting layer is electrically connected to the optoelectronic device; an insulating layer disposed... Agent:

20130026515 - Led package with a fresnel lens: A LED package with a Fresnel lens includes a base, a LED chip, a surrounding body and a lens. The lens is a Fresnel lens which refracts the beam of light from the LED chip to one definite direction for spotlighting the emitting light in a certain orientation.... Agent:

20130026514 - Light emitting device: The invention provides a light emitting device. A light emitting device includes a light emitting component capable of radiating a light. A first fluorescent layer is capable of radiating a first light of a first wavelength range while being excited by the light. A second fluorescent layer is capable of... Agent:

20130026527 - Light emitting device and method of manufacturing the light emitting device: Provided is a light emitting device having strong bonding strength between the light emitting element and the wavelength converting member is provided. In the light emitting device, a light emitting element and a wavelength converting member are bonded. Particularly, the light emitting element has, from the wavelength converting member side,... Agent: Nichia Corporation

20130026521 - Light emitting devices and methods of manufacturing the same: The inventive concept provides light emitting devices and methods of manufacturing a light emitting device. The light emitting device may include a transparent substrate including a first region and a second region, a first transparent electrode disposed on a first surface of the transparent substrate, a second transparent electrode facing... Agent: Electronics And Telecommunications Research Institute

20130026525 - Light emitting devices, systems, and methods of manufacturing: A light emitting device includes: a substrate; an n layer; an active light emitting region, a p layer; and a support portion configured to provide both mechanical support and improve light transmission disposed over a light emitting side of the device.... Agent:

20130026524 - Light emitting diode: A light emitting diode (LED) is provided. The LED comprises a semiconductor composite layer stacked laterally and a phosphor substrate. The phosphor substrate covers a lateral surface of the semiconductor composite layer.... Agent: Walsin Lihwa Corporation

20130026519 - Light-emitting device: A structure of a light-emitting device includes the following components: a substrate; an epitaxial structure on the substrate, the epitaxial structure including at least a first conductivity type semiconductor layer, a light-emitting active layer, and a second conductivity type semiconductor layer; a first electrode on the first conductivity type semiconductor... Agent:

20130026516 - Light-emitting diode (led) package structure and packaging method thereof: A light-emitting diode (LED) package structure and a packaging method thereof are provided. The packaging method includes: forming first conductive layers on a silicon substrate, and forming a reflection cavity and electrode via holes from a top surface of the silicon substrate; forming a reflection layer on predetermined areas of... Agent: Siliconware Precision Industries Co., Ltd.

20130026526 - Light-emitting diode housing comprising fluoropolymer: A light-emitting diode housing comprising fluoropolymer is disclosed. The light-emitting diode housing supports a light-emitting diode chip and reflects at least a portion of the light emitted from the light-emitting diode chip.... Agent: E I Du Pont De Nemours And Company

20130026520 - Light-emitting diode package and method for manufacturing the same: An LED package includes a substrate, an LED chip arranged on the substrate, and a light transmission layer arranged on a light output path of the LED chip. The substrate includes a first electrode and a second electrode separated and electrically insulated from the first electrode. The LED chip is... Agent: Advanced Optoelectronic Technology, Inc.

20130026513 - Oled assembly and luminaire with removable diffuser: An OLED assembly comprises a base and a planar OLED device mounted on the base. A planar light diffuser sheet is removably attached relative to the base and OLED device. A releasable attachment mechanism is operably configured between the light diffuser sheet and the base. The light diffuser sheet is... Agent:

20130026517 - Organic luminance device, method for manufacturing same and lighting apparatus including same: An organic luminance device includes a base substrate, a organic luminance multi-layered structure and a cover substrate. Furthermore, a protective film is used to wrap the light emitting surface and at least one lateral surface of the base substrate to prevent the substrate from crack. The protective film may be... Agent: Au Optronics Corp.

20130026522 - Surface-mount light emitting device: A surface-mount light emitting device is provided comprising a light emitting element (2), a reflector (1) which is molded integral with a leadframe (11, 12) having the light emitting element mounted thereon, and an encapsulating resin composition (4). The reflector is molded from a heat curable resin composition to define... Agent:

20130026518 - Wafer level led package and method of fabricating the same: Disclosed are a wafer level LED package and a method of fabricating the same. The method of fabricating a wafer level LED package includes: forming a plurality of semiconductor stacks on a first substrate, each of the semiconductor stacks comprising a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an... Agent: Seoul Opto Device Co., Ltd.

20130026529 - Light emitting chip package and method for making same: A light emitting chip package includes a substrate, an insulation layer, a patterned electric conductive layer, a light emitting chip, an encapsulation, a plurality of thermal conductors and electrical conductors. The insulation layer is formed on a top surface of the substrate. The patterned electric conductive layer partially covers the... Agent: Hon Hai Precision Industry Co., Ltd.

20130026532 - Light emitting device: A light emitting device of the present invention has a package constituted by a molded article having a light emitting face, a bottom face that is contiguous with the light emitting face, and a rear face that is on the opposite side from the light emitting face, and a pair... Agent: Nichia Corporation

20130026530 - Light emitting device module: Disclosed is a light emitting device module including a package body, a first lead frame and a second lead frame provided on the package body, a light emitting device electrically connected to the first lead frame and the second lead frame, a first pad and a second pad respectively formed... Agent: Lg Innotek Co., Ltd.

20130026531 - Non-polar light emitting diode having photonic crystal structure and method of fabricating the same: A non-polar light emitting diode (LED) having a photonic crystal structure and a method of fabricating the same. A non-polar LED includes a support substrate, a lower semiconductor layer positioned on the support substrate, an upper semiconductor layer positioned over the lower semiconductor layer, a non-polar active region positioned between... Agent: Seoul Opto Device Co., Ltd.

20130026528 - Waterproof transparent led shield structure: A waterproof transparent LED shield structure has a singular LED component with a circuit board and an LED lighting component, with the circuit board connected with protruding electric pins. A hard transparent shield has a base board and a shield. The base board covers the front side of the circuit... Agent: Safety Traffic Equipment Co., Ltd.

20130026533 - Organic light-emitting diode display and manufacturing method thereof: An organic light emitting diode display includes a substrate, an organic light emitting diode on the substrate, an organic film configured to cover the organic light emitting diode on the substrate in an organic film deposition area having a first diameter, and an inorganic film configured to cover the organic... Agent:

20130026534 - Silicon light emitting device and method of fabricating same: A light emitting device (10) comprises a body (11) comprising a substrate (12) of a p-type semiconductor material. The substrate has an upper surface (14) and having formed therein on one side of the upper surface and according to a bulk semi-conductor fabrication process utilizing lateral active area isolation techniques:... Agent: Insiava (pty) Limited

20130026535 - Formation of integral composite photon absorber layer useful for photoactive devices and sensors: Methods of forming photoactive devices include infiltrating pores of a solid porous ceramic material with a fluid, which may be a supercritical fluid, carrying at least one single source precursor therein. The single source precursor may be decomposed to form a plurality of particles within the pores of the solid... Agent: Battelle Energy Alliance, LLC

20130026536 - Insulated gate semiconductor device with optimized breakdown voltage, and manufacturing method thereof: An insulated gate semiconductor device, comprising: a semiconductor body having a front side and a back side opposite to one another; a drift region, which extends in the semiconductor body and has a first type of conductivity and a first doping value; a body region having a second type of... Agent: Stmicroelectronics S.r.l.

20130026537 - Power semiconductor device: A power semiconductor device is disclosed with layers of different conductivity types between an emitter electrode on an emitter side and a collector electrode on a collector side. The device can include a drift layer, a first base layer in direct electrical contact to the emitter electrode, a first source... Agent: Abb Technology Ag

20130026538 - Semiconductor device having epitaxial structures: A semiconductor device having epitaxial structures includes a gate structure positioned on a substrate, epitaxial structures formed in the substrate at two sides of the gate structure, and an undoped cap layer formed on the epitaxial structures. The epitaxial structures include a dopant, a first semiconductor material having a first... Agent:

20130026540 - Methods and apparatus for forming semiconductor structures: Methods and apparatus for forming semiconductor structures are disclosed herein. In some embodiments, a semiconductor structure may include a first germanium carbon layer having a first side and an opposing second side; a germanium-containing layer directly contacting the first side of the first germanium carbon layer; and a first silicon... Agent: Applied Materials, Inc.

20130026539 - Replacement source/drain finfet fabrication: A finFET is formed having a fin with a source region, a drain region, and a channel region between the source and drain regions. The fin is etched on a semiconductor wafer. A gate stack is formed having an insulating layer in direct contact with the channel region and a... Agent: Advanced Ion Beam Technology, Inc.

20130026541 - Semiconductor integrated circuit device: The present invention is a semiconductor integrated circuit device formed over a semi-insulating compound semiconductor substrate in which a first electrode of an MIM capacitor electrically coupled to an external pad is electrically coupled to the semi-insulating compound semiconductor substrate, and on the other side, a second electrode of the... Agent: Renesas Electronics Corporation

20130026542 - Semiconductor device: A semiconductor device includes a semiconductor layer having a plurality of active regions that are separated by element isolation grooves, a capacitive film having a sidewall covering portion covering a sidewall of the element isolation grooves, and an electrode film laminated on the capacitive film, and a capacitor element is... Agent: Rohm Co., Ltd.

20130026543 - Semiconductor device and manufacturing method thereof: A semiconductor device includes a plurality of active areas disposed on a semiconductor substrate. A manufacturing method of the semiconductor device includes performing a first annealing process on the semiconductor substrate by emitting a first laser alone a first scanning direction, and performing a second annealing process on the semiconductor... Agent:

20130026544 - Fully depleted silicon on insulator neutron detector: A method for forming a neutron detector comprises thinning a backside silicon substrate of a radiation detector; and forming a neutron converter layer on the thinned backside silicon substrate of the radiation detector to form the neutron detector. The neutron converter layer comprises one of boron-10 (10B), lithium-6 (6Li), helium-3... Agent: International Business Machines Corporation

20130026546 - Integrated circuit comprising an isolating trench and corresponding method: An integrated circuit including at least one isolating trench that delimits an active area made of a monocrystalline semiconductor material, the or each trench including an upper portion including an insulating layer that encapsulates a lower portion of the trench, the lower portion being at least partly buried in the... Agent: Stmicroelectronics (crolles 2) Sas

20130026545 - Multiple well drain engineering for hv mos devices: At least one N-well implant having a different doping level is formed in a silicon substrate by first etching the substrate with an alignment target for aligning future process masks thereto. This alignment target is outside of any active device area. By using at least one N-well implant having a... Agent: Microchip Technology Incorporated

20130026547 - Active pixel sensor with a diagonal active area: An imaging device formed as a CMOS semiconductor integrated circuit having two adjacent pixels in a row connected to a common column line and a processor based system with such an imaging device. By having adjacent pixels of a row share column lines, the CMOS imager circuit eliminates half the... Agent: Round Rock Research, LLC

20130026548 - Image sensor with controllable vertically integrated photodetectors: An image sensor includes front-side and backside photodetectors of a first conductivity type disposed in a substrate layer of the first conductivity type. A front-side pinning layer of a second conductivity type is connected to a first contact. The first contact receives a predetermined potential. A backside pinning layer of... Agent:

20130026550 - Semiconductor integrated circuit: A semiconductor integrated circuit includes a first conduction-type semiconductor region, a second conduction-type first impurity region, and a guard ring formed using a first conduction-type second impurity region so as to form a protection device of an electrostatic protection circuit. The first impurity region is formed inside the semiconductor region... Agent: Renesas Electronics Corporation

20130026549 - Semiconductor integrated circuit having capacitor for providing stable power and method of manufacturing the same: A capacitor and a method of manufacturing the same are provided. A dummy capacitor group is formed in the peripheral circuit area and includes a dummy storage node contact unit, a dielectric, and a dummy plate electrode. A metal oxide semiconductor (MOS) capacitor is formed in the peripheral circuit area... Agent: Hynix Semiconductor Inc.

20130026551 - Semiconductor integrated circuit having reservoir capacitor: A semiconductor integrated circuit including a large capacity reservoir capacitor to provide suitable power is provided. The semiconductor integrated circuit includes a semiconductor substrate in which a cell area and a peripheral circuit area are defined, a MOS capacitor formed on the semiconductor substrate corresponding to the peripheral circuit area,... Agent: Sk Hynix Inc.

20130026554 - Nand type flash memory for increasing data read/write reliability: A NAND type flash memory for increasing data read/write reliability includes a semiconductor substrate unit, a base unit, and a plurality of data storage units. The semiconductor substrate unit includes a semiconductor substrate. The base unit includes a first dielectric layer formed on the semiconductor substrate. The data storage units... Agent: Inotera Memories, Inc.

20130026555 - Nonvolatile semiconductor memory device including memory cells formed to have double-layered gate electrodes: A nonvolatile semiconductor memory device includes a plurality of floating gate electrodes respectively formed above a semiconductor substrate with first insulating films disposed therebetween, and a control gate electrode formed above the plurality of floating gate electrodes with a second insulating film disposed therebetween. In each of the plurality of... Agent:

20130026553 - Nvm bitcell with a replacement control gate and additional floating gate: Embodiments relate to a nonvolatile memory (“NVM”) bitcell with a replacement metal control gate and an additional floating gate. The bitcell may be created using a standard complementary metal-oxide-semiconductor manufacturing processes (“CMOS processes”) without any additional process steps, thereby reducing the cost and time associated with fabricating a semiconductor device... Agent: Synopsys, Inc.

20130026552 - Split-gate flash memory exhibiting reduced interference: A split gate memory cell is fabricated with a dielectric spacer comprising a high-k material between the word gate and the memory gate stack. Embodiments include memory cells with a dielectric spacer comprising low-k and high-k layers. Other embodiments include memory cells with an air gap between the word gate... Agent: Globalfoundries Singapore Pte. Ltd.

20130026556 - Nand type flash memory for increasing data read/write reliability: A NAND type flash memory for increasing data read/write reliability includes a semiconductor substrate unit, a base unit, and a plurality of data storage units. The semiconductor substrate unit includes a semiconductor substrate. The base unit includes a first dielectric layer formed on the semiconductor substrate. The data storage units... Agent: Inotera Memories, Inc.

20130026558 - Semiconductor devices including variable resistance material and methods of fabricating the same: The semiconductor device includes an insulating substrate, a channel layer over the insulating substrate, a gate at least partially extending from an upper surface of the channel layer into the channel layer, a source and a drain respectively at opposing sides of the gate on the channel layer, a gate... Agent: Samsung Electronics Co., Ltd.

20130026557 - Sonos non-volatile memory cell and fabricating method thereof: A method for fabricating a silicon-oxide-nitride-oxide-silicon (SONOS) non-volatile memory cell, wherein the method comprises steps as following: a pad oxide layer and a first hard mask layer are sequentially formed on a substrate. The pad oxide layer and the first hard mask layer are then etched through to form an... Agent: United Microelectronics Corp.

20130026560 - Semiconductor device: A parallel p-n layer (20) is provided as a drift layer between an active portion and an n+ drain region (11). The parallel p-n layer (20) is formed by an n-type region (1) and a p-type region (2) being repeatedly alternately joined. An n-type high concentration region (21) is provided... Agent: Fuji Electric Co., Ltd.

20130026559 - Silicon-carbide mosfet cell structure and method for forming same: In one embodiment, the invention comprises a MOSFET comprising individual MOSFET cells. Each cell comprises a U-shaped well (228) (P type) and two parallel sources (260) (N type) formed within the well. A plurality of source rungs (262) (doped N) connect sources (260) at multiple locations. Regions between two rungs... Agent:

20130026561 - Vertical transistor with improved robustness: A transistor is disclosed that includes a semiconductor body having a first horizontal surface. A drift region is arranged in the semiconductor body. A plurality of gate electrodes is arranged in trenches of the semiconductor body. The trenches have a longitudinal direction and extending parallel relative to each other. The... Agent: Infineon Technologies Austria Ag

20130026564 - Methods of fabricating semiconductor devices: A method of fabricating a semiconductor device using a recess channel array is disclosed. A substrate is provided having a first region and a second region, including a first transistor in the first region including a first gate electrode partially filling a trench, and source and drain regions that are... Agent: Samsung Electronics Co., Ltd.

20130026563 - Structures and methods for forming high density trench field effect transistors: A semiconductor structure comprises trenches extending into a semiconductor region. Portions of the semiconductor region extend between adjacent trenches forming mesa regions. A gate electrode is in each trench. Well regions of a first conductivity type extend in the semiconductor region between adjacent trenches. Source regions of a second conductivity... Agent: Fairchild Semiconductor Corporation

20130026562 - Vertical memory cell: Methods of forming, devices, and apparatus associated with a vertical memory cell are provided. One example method of forming a vertical memory cell can include forming a semiconductor structure over a conductor line. The semiconductor structure can have a first region that includes a first junction between first and second... Agent: Micron Technology, Inc.

20130026565 - Low rdson resistance ldmos: A device having a salicide block spacer on a second side of a gate is disclosed. The use of the salicide block spacer indirectly reduces the blocking effects during the implantation processes, thereby lowering the Rdson without compromising the breakdown voltage of the device.... Agent: Globalfoundries Singapore Pte. Ltd.

20130026567 - Finfet drive strength modification: One application of this approach is to enable differentiation of the drive strengths of transistors in an integrated circuit by applying the technique to some, but not all, of the transistors in the integrated circuit. In particular in a SRAM cell formed from FinFET transistors the application of the technique... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130026566 - Non-volatile semiconductor memory device: A non-volatile semiconductor memory device according to an embodiment includes: a p-type semiconductor substrate; a p-type first p well which is formed in the semiconductor substrate and in which a bit line connecting transistor configured to connect a bit line of a memory cell and a sense amplifier unit is... Agent: Kabushiki Kaisha Toshiba

20130026568 - Planar srfet using no additional masks and layout method: A semiconductor power device is supported on a semiconductor substrate with a bottom layer functioning as a bottom electrode and an epitaxial layer overlying the bottom layer as the bottom layer. The semiconductor power device includes a plurality of FET cells and each cell further includes a body region extending... Agent:

20130026569 - Methods and apparatus related to hot carrier injection reliability improvement: In one general aspect, an apparatus can include a substrate, a gate electrode, and a gate dielectric having at least a portion disposed between the gate electrode and the substrate. The apparatus can include a heavily doped drain region disposed within the substrate, and a lightly doped drain region within... Agent:

20130026573 - Body contact soi transistor structure and method of making: The present invention puts forward a body-contact SOI transistor structure and method of making. The method comprises: forming a hard mask layer on the SOI; etching an opening exposing SOI bottom silicon; wet etching an SOI oxide layer through the opening; depositing a polysilicon layer at the opening followed by... Agent: Fudan University

20130026570 - Borderless contact for ultra-thin body devices: After formation of a semiconductor device on a semiconductor-on-insulator (SOI) layer, a first dielectric layer is formed over a recessed top surface of a shallow trench isolation structure. A second dielectric layer that can be etched selective to the first dielectric layer is deposited over the first dielectric layer. A... Agent: International Business Machines Corporation

20130026572 - N-channel and p-channel finfet cell architecture: A finFET block architecture suitable for use of a standard cell library, is based on an arrangement including a first set of semiconductor fins in a first region of the substrate having a first conductivity type, and a second set of semiconductor fins in a second region of the substrate,... Agent: Synopsy, Inc.

20130026571 - N-channel and p-channel finfet cell architecture with inter-block insulator: A finFET block architecture includes a first set of semiconductor fins having a first conductivity type, and a second set of semiconductor fins having a second conductivity type. An inter-block insulator is placed between outer fins of the first and second sets. A patterned gate conductor layer includes a first... Agent: Synopsys, Inc.

20130026574 - Semiconductor device, method for manufacturing same, and display device: In an inverted staggered type TFT (100), contact layers (150a and 150b) that electrically connect a channel layer (140) to source and drain electrodes (160a and 160b), respectively, include n+ amorphous silicon layers (151a and 151b), n+ microcrystalline silicon layers (152a and 152b), and n+ microcrystalline silicon layers (153a and... Agent:

20130026575 - Threshold adjustment of transistors by controlled s/d underlap: Roughly described, an integrated circuit device has formed on a substrate a plurality of transistors including a first subset of at least one transistor and a second subset of at least one transistor, wherein all of the transistors in the first subset have one underlap distance and all of the... Agent: Synopsys, Inc.

20130026576 - Combined output buffer and esd diode device: An integrated circuit ESD protection circuit (270) is formed with a combination device consisting of a gated diode (271) and an output buffer MOSFET (272) where the body tie fingers of a first conductivity type (307) are formed in the substrate (301, 302) and isolated from the drain regions of... Agent:

20130026577 - Semiconductor device: A high-frequency power amplifier of the type to be mounted in an RF module for mobile phones having high-frequency power field effect transistors and gate protective diodes which are coupled between the gates and the sources of the high-frequency power field effect transistors. The gate protective diodes have an n... Agent:

20130026578 - Semiconductor device and method of manufacturing the same: A semiconductor device includes a substrate, a gate dielectric layer on the substrate, and a gate electrode stack on the gate dielectric layer. The gate electrode stack includes a metal filling line, a wetting layer, a metal diffusion blocking layer, and a work function layer. The wetting layer is in... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130026580 - Semiconductor device: A semiconductor device having an SRAM which includes: a monolithic first active region in which a first transistor and a fifth transistor are disposed; a second active region separated from the first active region, in which a second transistor is disposed; a monolithic third active region in which a third... Agent: Renesas Elelctronics Corporation

20130026579 - Techniques providing high-k dielectric metal gate cmos: A method for manufacturing a semiconductor device includes forming a first dummy gate on a substrate, performing a doping process to the substrate, thereby forming a source and a drain at sides of the first dummy gate, performing a first high temperature annealing to activate the source and drain, forming... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130026581 - Semiconductor device comprising metal gates and a silicon containing resistor formed on an isolation structure: In a semiconductor device comprising sophisticated high-k metal gate structures formed in accordance with a replacement gate approach, semiconductor-based resistors may be formed above isolation structures substantially without being influenced by the replacement gate approach. Consequently, enhanced area efficiency may be achieved compared to conventional strategies, in which the resistive... Agent: Globalfoundries Inc.

20130026582 - Partial poly amorphization for channeling prevention: Semiconductor devices are formed without zipper defects or channeling and through-implantation and with different silicide thicknesses in the gates and source/drain regions, Embodiments include forming a gate on a substrate, forming a nitride cap on the gate, forming a source/drain region in the substrate on each side of the gate,... Agent: Globalfoundries Inc.

20130026584 - Micro-electromechanical system devices: A micro-electromechanical system (MEMS) device can include a substrate and a first beam suspended relative to a substrate surface. The first beam can include a first portion and a second portion that are separated by an isolation joint made of an insulative material. The first and second portions can each... Agent: Kionix, Inc.

20130026583 - Vibrating device and electronic apparatus: A vibrating device has a package having an accommodating space in the interior thereof and a gyro element and an IC chip accommodated in the accommodating space. The package has a plate-like bottom plate having an IC chip mounting area and a vibrating element mounting area. The IC chip mounting... Agent: Seiko Epson Corporation

20130026585 - Mram device and fabrication method thereof: According to an embodiment, a magnetoresistive random access memory (MRAM) device comprises a bottom electrode, a stack, a dielectric material, a dielectric layer, and a conductive material. The bottom electrode is over a substrate, and the stack is over the bottom electrode. The stack comprises a magnetic tunnel junction (MTJ)... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130026586 - Cross-loop antenna: An antenna is provided. This antenna is contained within a package that is secured to an IC (which allows radiation to propagated away for a printed circuit board so as to reduce interference), and this antenna includes two loop antennas that are shorted to ground and that “overlap” and includes... Agent: Texas Instruments Incorporated

20130026588 - Photoelectric conversion device and method for manufacturing photoelectric conversion device: The object is to improve the conversion efficiency of a photoelectric conversion device. This object can be achieved by a photoelectric conversion device including an electrode and a semiconductor layer which is provided on one main surface of the electrode and contains a I-III-VI group compound semiconductor, wherein the semiconductor... Agent: Kyocera Corporation

20130026587 - Pixel sensor cells and methods of manufacturing: Pixel sensor cells with an opaque mask layer and methods of manufacturing are provided. The method includes forming a transparent layer over at least one active pixel and at least one dark pixel of a pixel sensor cell. The method further includes forming an opaque region in the transparent layer... Agent: International Business Machines Corporation

20130026592 - Focal plane array and method for manufacturing the same: A method of forming a focal plane array by: forming a first wafer having sensing material provided on a surface, which is covered by a sacrificial layer, the sensing material being a thermistor material defining at least one pixel; providing supporting legs for the pixel within the sacrificial layer, covering... Agent: Sensonor Technologies As

20130026589 - Miniaturization active sensing module and method of manufacturing the same: A miniaturization active sensing module includes a substrate unit, an active sensing unit, and an optical unit. The substrate unit includes a substrate body, a plurality of first bottom conductive pads disposed on the bottom side of the substrate body, and a plurality of first conductive tracks embedded in the... Agent: Silitek Electronic (guangzhou) Co., Ltd.

20130026590 - Sloped structure, method for manufacturing sloped structure, and spectrum sensor: A method for manufacturing a sloped structure is disclosed. The method includes the steps of: (a) forming a sacrificial film above a substrate; (b) forming a first film above the sacrificial film; (c) forming a second film having a first portion connected to the substrate, a second portion connected to... Agent: Seiko Epson Corporation

20130026591 - Solid-state image pickup apparatus: A solid-state image pickup apparatus including a substrate and a solid-state image pickup device. The substrate includes an opening portion. The solid-state image pickup device is mounted as a flip chip on a lower surface of the substrate on a circumference of the opening portion and receives and photo-electrically converts... Agent: Sony Corporation

20130026593 - Thin film photovoltaic device with enhanced light trapping scheme: A thin film photovoltaic device comprising a relief textured transparent cover plate, a layer of transparent conductive oxide having a layer thickness of less than 700 nm, a light absorbing active layer and a reflective back electrode, where the layer of transparent conductive oxide is a non-textured layer.... Agent: Solarexcel B.v.

20130026594 - Image sensor with controllable vertically integrated photodetectors: An image sensor includes front-side and backside photodetectors of a first conductivity type disposed in a substrate layer of the first conductivity type. A front-side pinning layer of a second conductivity type is connected to a first contact. The first contact receives a predetermined potential. A backside pinning layer of... Agent:

20130026595 - Semiconductor light-receiving device: A semiconductor light-receiving device includes a semiconductor light-receiving element that has a first electrode and a second electrode, a first wiring coupled to the first electrode, and a second wiring coupled to the second electrode, a width of the second wiring being smaller than a width of the first wiring.... Agent: Sumitomo Electric Device Innovations, Inc.

20130026596 - Focal plane array and method for manufacturing the same: A method of forming a focal plane array by: preparing a first wafer having sensing material provided on a surface, which is covered by a sacrificial layer; preparing a second wafer including read-out integrated circuit and a contact pad, which is covered by another sacrificial layer into which are formed... Agent: Sensonor Technologies As

20130026597 - Method of generating electrical energy in an integrated circuit during the operation of the latter, corresponding integrated circuit and method of fabrication: An integrated circuit may include a region containing a thermoelectric material and be configured to be subjected to a temperature gradient resulting from a flow of an electric current in a part of the integrated circuit during its operation, and an electrically conducting output coupled to the region for delivering... Agent: Stmicroelectronics (rousset) Sas

20130026598 - Schottky barrier diode: A Schottky barrier diode includes a first metal layer, a second metal layer separated form the first metal layer, and a semiconductor layer. The semiconductor layer is in Schottky contact with the first metal layer and in ohmic contact with the second metal layer. The semiconductor layer includes an insulated... Agent: Tsinghua University

20130026599 - Semiconductor device: A semiconductor device includes an isolation portion penetrating a semiconductor substrate from a first surface to a second surface positioned opposite the first surface. The isolation portion includes a first insulating film and a second insulating film. The first insulating film has a slit portion at a side of the... Agent: Elpida Memory, Inc.

20130026600 - Forming air gaps in memory arrays and memory arrays with air gaps thus formed: Methods of forming air gaps in memory arrays and memory arrays with air gaps thus formed are disclosed. One such method may include forming an isolation region, having a first dielectric, through a charge-storage structure that is over a semiconductor, the isolation region extending into the semiconductor; forming a second... Agent: Micron Technology, Inc.

20130026601 - Semiconductor device and method for manufacturing a semiconductor: A semiconductor device comprises a semiconductor substrate, an anorganic isolation layer on the semiconductor substrate and a metallization layer on the anorganic isolation layer. The metallization layer comprises a fuse structure. At least in an area of the fuse structure the metallization layer and the anorganic isolation layer have a... Agent: Infineon Technologies Ag

20130026602 - Semiconductor device: A semiconductor device, which exhibits an increased design flexibility for a capacitor element, and can be manufactured with simple method, is provided. A semiconductor device 100 includes: a silicon substrate 101; an interlayer film 103 provided on the silicon substrate 101; a multiple-layered interconnect embedded in the interlayer film 103;... Agent: Renesas Electronics Corporation

20130026603 - Semiconductor device and method of manufacturing the same: A method of manufacturing a semiconductor device includes forming an insulating film over a semiconductor substrate, forming a capacitor including a lower electrode, a capacitor dielectric film including a ferroelectric material, and an upper electrode over the insulating film, forming a first protective insulating film over a side surface and... Agent: Fujitsu Semiconductor Limited

20130026604 - Lateral avalanche photodiode structure: A lateral avalanche photodiode structure including a substrate, a PN diode and a metal layer is provided. The substrate has at least one first electrode area, at least one light receiving area, and at least one second electrode area which are arranged horizontally. The first electrode area is also an... Agent: National Central University

20130026605 - Wlcsp for small, high volume die: The disclosed WLCSP solution overcomes the limitations of fan-out WLCSP solutions, and other conventional solutions for WLCSP for small, high volume die, by increasing the width of scribe regions between die on a semiconductor substrate to accommodate bonding structures (e.g., solder balls) that partially extend beyond peripheral edges of the... Agent: Atmel Corporation

20130026606 - Tsv pillar as an interconnecting structure: The present invention includes embodiments of a processing method, and resulting structure, for building a chip having a TSV pillar which can be used as an interconnecting structure. The process includes the deposition of a dual diffusion barrier between the TSV and the substrate the TSV is embedded within. The... Agent: International Business Machines Corporation

20130026607 - Integrated circuit devices having features with reduced edge curvature and methods for manufacturing the same: A structure such as an integrated circuit device is described having a line of material with critical dimensions which vary within a distribution substantially less than that of a mask element, such as a patterned resist element, used in manufacturing the line of material.... Agent: Synopsys, Inc.

20130026609 - Package assembly including a semiconductor substrate with stress relief structure: An apparatus configured to be coupled onto a substrate, wherein the apparatus comprises a semiconductor substrate and the semiconductor substrate includes a plurality of trenches defined within a side of the semiconductor substrate. The apparatus further comprises an interconnect layer over portions of the side of the semiconductor substrate, wherein... Agent: Marvell World Trade Ltd.

20130026608 - Process for manufacturing a semiconductor structure comprising a functionalized layer on a support substrate: The invention relates to a process for manufacturing a semiconductor structure comprising a functionalized layer on a support substrate, comprising the following steps: (a) implanting ionic species in a source substrate comprising the said functionalized layer and a sacrificial buffer layer located under the functionalized layer relative to the direction... Agent: Soitec

20130026610 - Lithography method and device: Lithography methods and devices are shown that include a semiconductor structure such as a mask. Methods and devices are shown that include a pattern of mask features and a composite feature. Selected mask features include doubled mask features. Methods and devices shown may provide varied feature sizes (including sub-resolution) with... Agent:

20130026611 - Semiconductor substrate including doped zones forming p-n junctions: A semiconductor substrate (100) has three doped zones (1), (2) and (3), forming a P-N junction (101), the third zone being located between the first zone and the second zone. The P-N junction of the substrate further has a fourth doped zone (4) having a first portion (4A) in contact... Agent:

20130026612 - Method of shielding through silicon vias in a passive interposer: A passive interposer apparatus with a shielded through silicon via (TSV) configuration is disclosed. The apparatus includes a p-doped substrate, wherein at least an upper portion of the p-doped substrate is heavily p-doped. An interlayer dielectric layer (ILD) is disposed over the upper portion of the p-doped substrate. A plurality... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130026613 - Semiconductor device: A method of cutting an electrical fuse including a first conductor and a second conductor, the first conductor including a first cutting target region, the second conductor branched from the first conductor and connected to the first conductor and including a second cutting target region, which are formed on a... Agent: Renesas Electronics Corporation

20130026614 - Structure and method for bump to landing trace ratio: The present disclosure provides an integrated circuit. The integrated circuit includes an interconnect structure formed on a substrate; a landing metal trace formed on the interconnect structure and coupled to the interconnect structure, wherein the landing metal trace includes a first width T defined in a first direction; and a... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130026615 - Double-side exposed semiconductor device and its manufacturing method: A double-side exposed semiconductor device includes an electric conductive first lead frame attached on top of a thermal conductive but electrical nonconductive second lead frame and a semiconductor chip flipped and attached on top of the first lead frame. The gate and source electrodes on top of the flipped chip... Agent:

20130026616 - Power device package module and manufacturing method thereof: The present invention relates to a power device package module and a manufacturing method thereof. In one aspect of the present invention, a power device package module includes: a control unit a first lead frame, a control chip and a first coupling portion that are mounted on a first substrate,... Agent: Samsung Electro-mechanics Co., Ltd.

20130026617 - Methods of forming a metal silicide region in an integrated circuit: Methods of forming a metal silicide region in an integrated circuit are provided herein. In some embodiments, a method of forming a metal silicide region in an integrated circuit includes forming a silicide-resistive region in a first region of a substrate, the substrate having the first region and a second... Agent: Applied Materials, Inc.

20130026619 - Bump structures: The embodiments of bump and bump-on-trace (BOT) structures provide bumps with recess regions for reflowed solder to fill. The recess regions are placed in areas of the bumps where reflow solder is most likely to protrude. The recess regions reduce the risk of bump to trace shorting. As a result,... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130026622 - Bump structures in semiconductor device and packaging assembly: A bump structure in a semiconductor device or a packing assembly includes an under-bump metallization (UBM) layer formed on a conductive pad of a semiconductor substrate. The UBM layer has a width greater than a width of the conductive pad.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130026624 - Coaxial solder bump support structure: A solder bump support structure and method of manufacturing thereof is provided. The solder bump support structure includes an inter-level dielectric (ILD) layer formed over a silicon substrate. The ILD layer has a plurality of conductive vias. The structure further includes a first insulation layer formed on the ILD layer.... Agent: International Business Machines Corporation

20130026627 - Electronic chip comprising connection pillars and manufacturing method: An electronic chip including a semiconductor substrate (1) covered with an insulating layer (4) including metal interconnection levels (3) and interconnection pillars (10) connected to said metal interconnection levels (3), said pillars (110) forming regions (111) protruding from the upper surface of said insulating layer (4) and capable of forming... Agent: Stmicroelectronics (crolles 2) Sas

20130026628 - Flip chip interconnection having narrow interconnection sites on the substrate: A flip chip interconnect of a die on a substrate is made by mating the interconnect bump onto a narrow interconnect pad on a lead or trace, rather than onto a capture pad. The width of the narrow interconnect pad is less than a base diameter of bumps on the... Agent: Stats Chippac, Ltd.

20130026625 - Flip-chip semiconductor device having anisotropic electrical interconnection and substrate utilized for the package: Disclosed is a flip-chip semiconductor device having isotropic electrical interconnection, primarily comprising a chip and a substrate. The chip has at least a first bump and a plurality of second bumps. The substrate has a plurality of bump pads disposed on the top surface and an isotropic connecting mechanism disposed... Agent:

20130026621 - Metal bump structure: A semiconductor device comprises a substrate comprising a major surface and a plurality of metal bumps on the major surface. Each of the plurality of metal bumps comprises a metal via on the major surface and a metal pillar on the metal via having an overlay offset between the metal... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130026618 - Method and device for circuit routing by way of under-bump metallization: The present disclosure involves a semiconductor device. The semiconductor device includes a substrate that contains a plurality of electronic components. The semiconductor device includes an interconnect structure disposed over the substrate, the interconnect structure containing a plurality of interconnect layers. The semiconductor device includes a passivation layer disposed over the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130026626 - Method for forming bumps and substrate including the bumps: e

20130026620 - Self-aligning conductive bump structure and method of making the same: The disclosure relates to a conductive bump structure of a semiconductor device. An exemplary structure for a semiconductor device comprises a substrate comprising a major surface and conductive bumps distributed over the major surface of the substrate. Each of a first subset of the conductive bumps comprise a regular body,... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130026629 - Semiconductor device, semiconductor device unit, and semiconductor device production method: An example of a semiconductor device according to the present invention includes: a protective film (1) which has an opening to expose a part of the surface of an electrode pad (4) and covers the surface of the electrode pad (4) excluding the opening; and a bump (6) which is... Agent: Panasonic Corporation

20130026623 - Semiconductor devices, packaging methods and structures: Semiconductor devices, packaging methods and structures are disclosed. In one embodiment, a semiconductor device includes an integrated circuit die with a surface having a peripheral region and a central region. A plurality of bumps is disposed on the surface of the integrated circuit die in the peripheral region. A spacer... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130026630 - Flip chips having multiple solder bump geometries: In certain embodiments, a method includes depositing solder on an integrated circuit, reflowing the solder to create at least two solder bumps between bond pads and the integrated circuit, wherein the at least two solder bumps have different solder bump heights. A bottom layer is sized to accommodate the different... Agent:

20130026631 - Semiconductor apparatus and manufacturing method thereof: Disclosed are a semiconductor apparatus and a manufacturing method thereof. The manufacturing method of the semiconductor apparatus includes: forming a semiconductor chip on a semiconductor substrate; adhering a carrier wafer with a plurality of through holes onto the semiconductor chip; polishing the semiconductor substrate; forming a first via hole at... Agent: Electronics And Telecommunications Research Institute

20130026632 - Semiconductor element-embedded wiring substrate: A wiring substrate in which a semiconductor element is built includes a semiconductor element; a peripheral insulating layer covering at least an outer circumferential side surface of this semiconductor element; and an upper surface-side wiring line provided on the upper surface side of the wiring substrate. The semiconductor element includes... Agent: Nec Corporation

20130026633 - Multilayer metallization with stress-reducing interlayer: A wiring structure for a semiconductor device includes a multilayer metallization having a total thickness of at least 5 μm and an interlayer disposed in the multilayer metallization with a first side of the interlayer adjoining one layer of the multilayer metallization and a second opposing side of the interlayer... Agent: Infineon Technologies Ag

20130026635 - Hybrid copper interconnect structure and method of fabricating same: A hybrid interconnect structure containing copper regions that have different impurities levels within a same opening is provided. In one embodiment, the interconnect structure includes a patterned dielectric material having at least one opening located therein. A dual material liner is located at least on sidewalls of the patterned dielectric... Agent: International Business Machines Corporation

20130026634 - Hybrid interconnect technology: In one embodiment, an interconnect structure between an integrated circuit (IC) chip and a substrate comprises a plurality of materials.... Agent: Fujitsu Limited

20130026636 - Laminated and sintered ceramic circuit board, and semiconductor package including the circuit board: A circuit board that can decrease thermal stress acting between a semiconductor element and a board in association with temperature alteration and has high mechanical strength (rigidity) as a whole board (including a multilayer wiring layer) is provided. Ceramic base material having a coefficient of thermal expansion close to that... Agent: Ngk Insulators, Ltd.

20130026637 - Metal gate electrode of a field effect transistor: An integrated circuit fabrication is disclosed, and more particularly a field effect transistor with a low resistance metal gate electrode is disclosed. An exemplary structure for a metal gate electrode of a field effect transistor comprises a lower portion formed of a first metal material, wherein the lower portion has... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130026638 - Wafer-level chip scale package: A chip scale package implements solder bars to form a connection between a chip and a trace, formed in a substrate, such as another chip or PCB. Solder bars are formed by depositing one or more solder layers into the socket, or optionally, depositing a base metal layer into the... Agent:

20130026639 - Method of fabricating dual damascene structures using a multilevel multiple exposure patterning scheme: A method for fabricating a dual damascene structure includes providing a first photoresist layer coated on an underlying dielectric stack, exposing said first photoresist layer to a first predetermined pattern of light, coating a second photoresist layer onto the pre-exposed first photoresist layer, exposing said second photoresist layer to a... Agent: International Business Machines Corporation

20130026640 - Semiconductor device, manufacturing method for semiconductor device, electronic component, circuit substrate, and electronic apparatus: A semiconductor device includes: a semiconductor substrate including a first face and a second face on a side opposite to the first face; an external connection terminal formed on the first face of the semiconductor substrate; a first electrode formed on the first face of the semiconductor substrate and electrically... Agent: Seiko Epson Corporation

20130026641 - Conductor contact structure and forming method, and photomask pattern generating method for defining such conductor contact structure: A conductor contact structure includes a conductor line, a dielectric layer and a contact hole. The conductor line includes a first zone and a second zone. The first zone extends along a symmetry axis and is symmetrical with respect to the symmetry axis. The second zone extends along the symmetry... Agent: United Microelectronics Corp.

20130026648 - Film for forming semiconductor protection film, and semiconductor device: Disclosed is a film for forming a semiconductor protection film, which protects a surface of a semiconductor element that is mounted on a structure such as a substrate and is located on the outermost side, the surface being on the reverse side of the surface at which the semiconductor element... Agent:

20130026642 - Integrated circuit package including a direct connect pad, a blind via, and a bond pad electrically coupled to the direct connect pad: An integrated circuit package including a semiconductor die and a flexible circuit (flex circuit), and a method for forming the integrated circuit package. The flex circuit can include a direct connect pad which is not electrically coupled to an active trace, a blind via electrically coupled to the direct connect... Agent:

20130026645 - Low stress vias: A component can include a substrate having a front surface and a rear surface remote therefrom, an opening extending from the rear surface towards the front surface, and a conductive via extending within the opening. The substrate can have a CTE less than 10 ppm/° C. The opening can define... Agent: Tessera, Inc.

20130026653 - Method for manufacturing semiconductor device: In a manufacturing method of a semiconductor device incorporating a semiconductor element in a multilayered wiring structure including a plurality of wiring layers and insulating layers, a semiconductor element is mounted on a silicon support body whose thickness is reduced to a desired thickness and which are equipped with a... Agent: Nec Corporation

20130026646 - Passivated through wafer vias in low-doped semiconductor substrates: A method for forming passivated through wafer vias, passivated through wafer via structures, and passivated through wafer via design structures. The method includes: forming a through wafer via in a semiconductor substrate, the through wafer via comprising an electrical conductor extending from a top of the semiconductor substrate to a... Agent: International Business Machines Corporation

20130026644 - Photoactive compound gradient photoresist: A system and method for forming photoresists over semiconductor substrates is provided. An embodiment comprises a photoresist with a concentration gradient. The concentration gradient may be formed by using a series of dry film photoresists, wherein each separate dry film photoresist has a different concentration. The separate dry film photoresists... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130026652 - Semiconductor device: A semiconductor device which has a plurality of semiconductor chips stacked on a substrate. The semiconductor device includes semiconductor chip 2, semiconductor chip 3a stacked on substrate 4 together with semiconductor chip 2, and having a foot print larger than semiconductor chip 2, through electrode 22 extending through semiconductor chip... Agent: Elpida Memory, Inc.

20130026649 - Semiconductor device and manufacturing method therefor: A semiconductor device includes a plurality of protrusions formed on a first face of the semiconductor device; first bonding portions formed on upper portions of the plurality of protrusions; second bonding portions formed on side faces of the plurality of protrusions; and third bonding portions formed on the first face... Agent: Fujitsu Semiconductor Limited

20130026654 - Semiconductor device and method of forming vertical interconnect in fo-wlcsp using leadframe disposed between semiconductor die: A semiconductor device has a plurality of semiconductor die or components mounted over a carrier. A leadframe is mounted over the carrier between the semiconductor die. The leadframe has a plate and bodies extending from the plate. The bodies of the leadframe are disposed around a perimeter of the semiconductor... Agent: Stats Chippac, Ltd.

20130026650 - Semiconductor device, semiconductor module structure configured by vertically stacking semiconductor devices, and manufacturing method thereof: A semiconductor device is made up of an organic substrate; through vias which penetrate the organic substrate in its thickness direction; external electrodes and internal electrodes provided to the front and back faces of the organic substrate and electrically connected to the through vias; a semiconductor element mounted on one... Agent:

20130026643 - Semiconductor die assemblies, semiconductor devices including same, and methods of fabrication: Methods of fabricating multi-die assemblies including a wafer segment having no integrated circuitry thereon and having a plurality of vertically stacked dice thereon electrically interconnected by conductive through vias, resulting multi-die assemblies, and semiconductor devices comprising such multi-die assemblies. The wafer segment may function as a heat sink to enhance... Agent: Micron Technology, Inc.

20130026651 - Semiconductor package and stacked semiconductor package having the same: A semiconductor package includes a substrate having a substrate body possessing a first region, a second region which is defined around the first region and a third region which is defined around the second region. Wiring lines are placed on the substrate body, and the wiring lines have first ends... Agent: Hynix Semiconductor Inc.

20130026647 - Via structure: A via structure includes at least a first via set and a second via set electrically connected to the first via set. There is at least one via in the first via set and at least one via in the second via set. The via in the first via set... Agent:

20130026655 - Chip package structure and method of manufacturing the same: A chip package structure includes a substrate in which a plurality of grooves are formed, an adhesive layer disposed on the substrate, and a plurality of chips attached to the adhesive layer. In addition, a method of fabricating the chip package structure includes forming a plurality of grooves in the... Agent: Samsung Electronics Co., Ltd.

20130026656 - Semiconductor packages and electronic systems including the same: A plurality of semiconductor chips may be stacked on the substrate, and each of them may include at least one electrode pad. At least one of the plurality of semiconductor chips may include at least one redistribution pad configured to electrically connect with the at least one electrode pad.... Agent:

20130026657 - Semiconductor package and method of fabricating the same: A semiconductor package and a method of fabricating the same. The semiconductor package includes a dielectric layer having opposite first and second surfaces; a semiconductor chip disposed on the first surface; at least two conductive pads embedded in and exposed from the first surface of the dielectric layer, and electrically... Agent: Siliconware Precision Industries Co., Ltd.

20130026658 - Wafer level chip scale package for wire-bonding connection: Primarily disclosed is a wafer-level chip-scale-package (WLCSP) for wire-bonding connection. A first encapsulating layer is formed over a passivation layer of a chip. An RDL (redistribution wiring layer) is formed on the first encapsulating layer. A plurality of wire-bonding pads are stacked on the wiring terminals of the RDL on... Agent:

20130026659 - Microelectronic component: A method for producing a MEMS component including the steps of simultaneously embedding structure elements during producing the multi-level conductive path layer stack which structure elements are to be subsequently exposed, subsequently producing a recess that extends from a substrate backside to the multi-level conductive path layer stack, exposing the... Agent: Ihp Gmbh - Innovations For High Performance Microelectronics

20130026662 - Epoxy resin composition for semiconductor encapsulation and semiconductor device using the same: The present invention relates to an epoxy resin composition for semiconductor encapsulation, including the following components (A) to (D): (A) an epoxy resin; (B) a phenol resin; (C) an inorganic filler, and (D) a silicone compound containing an alkoxy group directly bonded to silicon atom in an amount of 10... Agent: Nitto Denko Corporation

20130026660 - Liquid epoxy resin composition for semiconductor encapsulation, and semiconductor device using the same: e

20130026661 - Liquid epoxy resin composition for semiconductor encapsulation, and semiconductor device using the same:

20130026663 - Method for curing defects in a semiconductor layer: A method for curing defects associated with the implantation of atomic species into a semiconductor layer transferred onto a receiver substrate, wherein the semiconductor layer is thermally insulated from the receiver substrate by a low thermal conductivity layer having thermal conductivity that is lower than that of the transferred semiconductor... Agent: Soitec

20130020547 - Phase change current density control structure: A phase change memory element and method of forming the same. The memory element includes first and second electrodes. A first layer of phase change material is between the first and second electrodes. A second layer including a metal-chalcogenide material is also between the first and second electrodes and is... Agent:

20130020548 - Seed layer for a p+ silicon germanium material for a non-volatile memory device and method: A method of forming a non-volatile memory device includes providing a substrate having a surface, depositing a dielectric overlying the surface, forming a first wiring structure overlying the dielectric, depositing silicon material overlying the first wiring structure, the silicon layer having a thickness of less than about 100 Angstroms, depositing... Agent: Crossbar, Inc.

20130020549 - Systems and methods for fabricating longitudinally-shaped structures: a) providing a substrate selected to promote epitaxial growth thereon a selected growth orientation, b) depositing a crystalline sacrificial layer on the substrate for epitaxially growing along the selected growth orientation, c) forming a film over the sacrificial layer, the film having a crystal lattice structure grown substantially along the... Agent: Agency For Science, Technology And Research

20130020551 - Group iii nitride semiconductor light emitting device and method of fabricating group iii nitride semiconductor light emitting device: A group III nitride semiconductor light emitting device includes an n-type cladding layer and a p-type cladding layer on a primary surface of a substrate, the c-axes of which tilt relative to the normal axis of the primary surface of the substrate. The p-type cladding layer is doped with a... Agent: Sumitomo Electric Industries, Ltd.

20130020550 - Nanostructured electroluminescent device and display: An electroluminescent device contains (1) first and second electrodes, at least one of which is transparent to radiation; (2) a hole conducting layer containing first nanoparticles wherein the hole conducting layer is in contact with said first electrode; (3) an electron conducting layer containing second nanoparticles where the electron conducting... Agent: Solexant Corp.

20130020555 - Nitride-based semiconductor light emiting device: A nitride-based semiconductor light emitting device includes an anti-bowing layer having a composition of AlxGa1-xN (0.01≦x≦0.04), and a light emitting structure formed on the anti-bowing layer and including a first conductivity-type nitride semiconductor layer, an active layer, and a second conductivity-type nitride semiconductor layer.... Agent:

20130020553 - Semiconductor light emitting device: There is provided a semiconductor light emitting device including: first and second conductivity type semiconductor layers; and an active layer disposed between the first and second conductivity type semiconductor layers and having a structure in which a plurality of quantum barrier layers and a plurality of quantum well layers are... Agent: Samsung Electronics Co., Ltd.

20130020554 - Semiconductor light emitting device and light emitting apparatus: There is provided a semiconductor light emitting device and a light emitting apparatus. The semiconductor light emitting device includes a light emitting diode (LED) part disposed on one region of a light transmissive substrate and including a first conductivity type semiconductor layer, an active layer and a second conductivity type... Agent: Samsung Electronics Co., Ltd.

20130020552 - Semiconductor light-emitting element: A semiconductor light-emitting element includes a support substrate, a semiconductor film including a light-emitting layer provided on the support substrate, a surface electrode provided on a light-extraction-surface-side surface of the semiconductor film, and a light-reflecting layer provided between the support substrate and the semiconductor film, forming a light-reflecting surface. The... Agent: Stanley Electric Co., Ltd.

20130020556 - Hybrid silicon evanescent photodetectors: Photodetectors and integrated circuits including photodetectors are disclosed. A photodetector in accordance with the present invention comprises a silicon-on-insulator (SOI) structure resident on a first substrate, the SOI structure comprising a passive waveguide, and a III-V structure bonded to the SOI structure, the III-V structure comprising a quantum well region,... Agent: The Regents Of The University Of California

20130020557 - Nanostructured transparent conducting electrode: An optoelectronic device is disclosed. The optoelectronic device comprises an active layer and a conducting network layer which comprises a plurality of interconnected metal nanowires and a layer of transparent conducting material in electrical contact with the active layer. The conducting network layer of interconnected metal nanowires is disposed on... Agent: Nanosolar, Inc.

20130020560 - Biphenyl-metal complexes-monomeric and oligomeric triplet emitters for oled applications: The present invention relates to light-emitting devices and novel emitter materials as well as emitter systems and, in particular, organic light-emitting devices (OLEDs). In particular, the invention relates to the use of luminescent complexes as emitters in such devices.... Agent: Universitat Regensburg

20130020561 - Dibenzo[c,g]carbazole compound, light-emitting element, light-emitting device, display device, lighting device and electronic device: Provided is a novel compound which can be used for a transport layer or as a host material or a light-emitting material in a light-emitting element and with which a high-performance light-emitting element can be manufactured. A dibenzo[c,g]carbazole compound in which an aryl group having 14 to 30 carbon atoms... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130020565 - Material for organic electroluminescent element, and organic electroluminescent element using same: Provided is a material for an organic electroluminescence device having a specific structure in which a dibenzothiophenyl group or a carbazolyl group is bonded to a carbazolyl group at its N-position (9-position) directly or through a linking group. Further provided is an organic electroluminescence device including one or more organic... Agent: Idemitsu Kosan Co., Ltd.

20130020558 - Organic electroluminescence device: o

20130020559 - Organic electroluminescence device: Provided is an organic electroluminescence device including a pair of electrodes composed of an anode and a cathode, a light emitting layer between the electrodes and an organic layer which is adjacent to the light emitting layer between the light emitting layer and the cathode, on a substrate, and the... Agent: Fujifilm Corporation

20130020564 - Organic electroluminescent element and production method therefor: A transparent organic EL element comprising: a transparent substrate, a first transparent electrode layer formed on the transparent substrate in stripe form, an insulating partition wall formed in stripe form in a direction orthogonal to the longitudinal direction of the first transparent electrode layer on the transparent substrate with the... Agent: Dai Nippon Printing Co., Ltd.

20130020566 - Photoelectric conversion device and imaging device: Provided is a solid-state imaging device using an organic photoelectric conversion device which functions as a photoelectric conversion device having high photoelectric conversion efficiency when applied to the photoelectric conversion device, having a small absolute value of a dark current, and exhibiting favorable characteristics at a room temperature to 60°... Agent: Fujifilm Corporation

20130020563 - Polycyclic compounds and organic electroluminescence device employing the same: Provided are a polycyclic compound of a compound having such a structure that two benzene rings bond to a central benzene ring each other to form a fused ring and another fused ring bonds to a terminal thereof, and an organic electroluminescence device including one or more organic thin film... Agent: Idemitsu Kosan Co., Ltd.

20130020562 - Polymer compound, net-like polymer compound produced by crosslinking the polymer compound, composition for organic electroluminescence element, organic electroluminescence element, organic el display, and organic el lighting: An object of the invention is to provide a polymer compound having a high hole transport capacity, excellent in electrochemical stability, and suitable to film formation according to a wet film formation method. Another object of the invention is to provide an organic electroluminescence element having a high current efficiency,... Agent: Mitsubishi Chemical Corporation

20130020568 - Photoelectric conversion device: Provided is a photoelectric conversion device with high conversion efficiency in which the light loss due to light absorption in a window layer is significantly reduced by using a light-transmitting semiconductor layer comprising an organic compound and an inorganic compound. Specifically, the photoelectric conversion device includes: over one surface of... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130020569 - Semiconductor device: A semiconductor device which can operate at high speed and consumes a smaller amount of power is provided. In a semiconductor device including transistors each including an oxide semiconductor, the oxygen concentration of the oxide semiconductor film of the transistor having small current at negative gate voltage is different from... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130020570 - Semiconductor device: An object of the present invention is to provide a semiconductor device in which stored data can be held even when power is not supplied for a certain time. Another object is to increase the degree of integration of a semiconductor device and to increase the storage capacity per unit... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130020571 - Semiconductor device: Provided is a structure of a transistor, which enables a so-called normally-off switching element, and a manufacturing method thereof. Provided is a structure of a semiconductor device which achieves high-speed response and high-speed operation by improving on characteristics of a transistor, and a manufacturing method thereof. Provided is a highly... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130020567 - Thin film transistor having passivation layer comprising metal and method for fabricating the same: A thin film transistor may include a passivation layer formed of a metal-containing conductive material. The thin film transistor includes: a gate electrode; a gate insulating layer positioned on the gate electrode; a channel layer positioned on the gate insulating layer; a source electrode and a drain electrode which are... Agent: Korea Institute Of Science And Technology

20130020572 - Cap chip and reroute layer for stacked microelectronic module: A cap chip or high density reroute layer for use in a stacked microelectronic module. A first set of electrically conductive reroute layers are defined on a sacrificial substrate. One or more stud bump columns are defined on an exposed conducive pad on a conductive reroute layer. One or more... Agent: Isc8 Inc.

20130020573 - Pressure detecting device and method for manufacturing the same, display device and method for manufacturing the same, and tft substrate with pressure detecting device: A pressure detecting device includes a glass substrate as a substrate, a lower electrode arranged on the glass substrate, an upper electrode spaced apart from the lower electrode and facing the lower electrode, the upper electrode having holes as one or more through-openings, and a source line as a change... Agent:

20130020574 - Display device and method of manufacturing the same: A display device includes a display element, a thin-film transistor for controlling light emission from the display element, and a signal line connected to the thin-film transistor. The thin-film transistor includes a gate electrode formed on an insulating substrate, a gate insulating film formed on the substrate so as to... Agent: Panasonic Corporation

20130020575 - Semiconductor device and manufacturing method thereof: To provide a miniaturized semiconductor device with stable electric characteristics in which a short-channel effect is suppressed. Further, to provide a manufacturing method of the semiconductor device. The semiconductor device (transistor) including a trench formed in an oxide insulating layer, an oxide semiconductor film formed along the trench, a source... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130020577 - Mosfet-schottky rectifier-diode integrated circuits with trench contact structures: A trench MOSFET device with embedded Schottky rectifier, Gate-Drain and Gate-Source clamp diodes on single chip is formed to achieve device shrinkage and performance improvement. The present semiconductor devices achieve low Vf and reverse leakage current for embedded Schottky rectifier, have overvoltage protection for Gate-Source clamp diode and avalanche protection... Agent: Force Mos Technology Co. Ltd.

20130020578 - Semiconductor device and method for manufacturing the same: The invention relates to a semiconductor device and a method for manufacturing such a semiconductor device. A semiconductor device according to an embodiment of the invention may comprise: an active fin region which is arranged on an insulating layer; a threshold voltage adjusting layer arranged on top of the active... Agent:

20130020576 - Shielded gate mosfet-schottky rectifier-diode integrated circuits with trenched contact structures: A trench shielded gate MOSFET device with embedded Schottky rectifier, Gate-Drain and Gate-Source clamp diodes on single chip is formed to achieve device shrinkage, lower cost and improved performance. The present semiconductor device achieve low Vf and reverse leakage current for embedded Schottky rectifier, having over-voltage protection and avalanche protection... Agent: Force Mos Technology Co. Ltd.

20130020579 - Display device: A display device which can suppress waveform distortion and lowered transmission coefficient of pixels, and suppress display irregularity is provided. In a display device having pixels arranged in a delta arrangement, a pixel includes a pixel portion which comprises a TFT including a source electrode, a drain electrode and a... Agent:

20130020583 - Epitaxial substrate and method for manufacturing epitaxial substrate: Provided is a crack-free epitaxial substrate. The epitaxial substrate includes: a (111) single crystal Si substrate and a buffer layer formed of a first and a second lamination unit being alternately laminated such that each of an uppermost and a lowermost portion of the buffer layer is formed of the... Agent: Ngk Insulators, Ltd.

20130020581 - Epitaxial wafer including nitride-based semiconductor layers: An epitaxial wafer including nitride-based semiconductor layers usable for a hetero-junction field effect type transistor, includes a first buffer layer of AlN or AlON, a second buffer layer of AlxGa1-xN having its Al composition ratios decreased in a stepwise fashion, a third buffer layer including a multilayer of repeatedly stacked... Agent: Sharp Kabushiki Kaisha

20130020580 - Heteroepitaxial growth using ion implantation: In one embodiment, a method of growing a heteroepitaxial layer comprises providing a patterned substrate containing patterned features having sidewalls. The method also includes directing ions toward the sidewalls in an exposure, wherein altered sidewall regions are formed, and depositing the heteroepitaxial layer under a set of deposition conditions effective... Agent: Varian Semiconductor Equipment Associates, Inc.

20130020582 - Rapid fabrication methods for forming nitride based semiconductors based on freestanding nitride growth substrates: High temperature bonding and interconnect methods can be used for LED and other optoelectronic devices based on freestanding nitride devices. Inorganic glasses, especially those which exhibit a CTE, which substantially matches the CTE of the freestanding nitride devices, can provide hermetic sealing of the freestanding nitride devices or the contact... Agent:

20130020584 - Semiconductor device and method for manufacturing same: In the present invention, provided is a semiconductor device, including: a GaN channel layer which is provided on a substrate and through which electrons run; a barrier layer which is provided on the GaN channel layer and which contains at least one of In, Al, and Ga and contains N;... Agent: Mitsubishi Electric Corporation

20130020587 - Power semiconductor device and method for manufacturing same: A semiconductor device includes a semiconductor substrate of a first conductivity type, a drift layer of the first conductivity type which is formed on a first main surface of the semiconductor substrate, a second well region of a second conductivity type which is formed to surround a cell region of... Agent: Mitsubishi Electric Corporation

20130020586 - Semiconductor device: A semiconductor device having a low feedback capacitance and a low switching loss. The semiconductor device includes: a substrate; a drift layer formed on a surface of the semiconductor substrate; a plurality of first well regions formed on a surface of the drift layer; a source region which is an... Agent: Mitsubishi Electric Corporation

20130020585 - Silicon carbide substrate, semiconductor device, and methods for manufacturing them: A silicon carbide substrate capable of reducing on-resistance and improving yield of semiconductor devices is made of single-crystal silicon carbide, and sulfur atoms are present in one main surface at a ratio of not less than 60×1010 atoms/cm2 and not more than 2000×1010 atoms/cm2, and oxygen atoms are present in... Agent: Sumitomo Electric Industries, Ltd.

20130020588 - Optical device with through-hole cavity: A light-emitting device having a through-hole cavity is disclosed. The optical device may contain a plurality of conductors, a light source die, a body and a transparent encapsulant material. The body may have a top surface and a bottom surface. A cavity is formed within the body extending from the... Agent: Avago Technologies EcbuIP(singapore) Pte. Ltd

20130020593 - Ac light emitting diode and method for fabricating the same: The present invention relates to a light emitting device, including a plurality of light guide portions, a reflection prevention substance disposed on an inclined surface of each light guide portion of the plurality of light guide portions, and a plurality light emitting regions. Each light emitting region includes a first-type... Agent: Seoul Opto Device Co., Ltd.

20130020591 - Display substrate and method of manufacturing the same: A display substrate includes first, second, and third insulating layers in a display area thereof. The first and third insulating layers are in not only the display area but also a pad area adjacent to the display area and including a pad therein. Thus, defects of the display panel may... Agent: Samsung Electronics Co., Ltd.

20130020590 - Light emitting devices and components having excellent chemical resistance and related methods: Light emitting devices and components having excellent chemical resistance and related methods are disclosed. In one embodiment, a component of a light emitting device can include a silver (Ag) portion, which can be silver on a substrate, and a protective layer disposed over the Ag portion. The protective layer can... Agent:

20130020592 - Light-emitting device, light-emitting device array, optical recording head, image forming apparatus, and method of manufacturing light-emitting device: Provided is a light-emitting device including a semiconductor substrate of a first conductivity type, a semiconductor multilayer reflection mirror of the first conductivity type, formed on the semiconductor substrate, a first semiconductor layer of the first conductivity type, formed on the semiconductor multilayer reflection mirror, a second semiconductor layer of... Agent: Fuji Xerox Co., Ltd.

20130020594 - Semiconductor template substrate, light-emitting element using a semiconductor template substrate, and a production method therefor: A light-emitting device includes a semiconductor layer, a light-emitting stack structure formed on a first surface of the semiconductor layer, and a plurality of inverted pyramid structures formed on a second surface of the semiconductor layer opposite to the first surface. Each of the inverted pyramid structures has a sectional... Agent: Cssolution Co., Ltd.

20130020589 - Wafer level photonic device die structure and method of making the same: A vertical Light Emitting Diode (LED) device includes an epi structure with a first-type-doped portion, a second-type-doped portion, and a quantum well structure between the first-type-doped and second-type-doped portions and a carrier structure with a plurality of conductive contact pads in electrical contact with the epi structure and a plurality... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130020595 - Led module and led module mounting structure: An LED module includes a substrate having a main surface and a rear surface located opposite the main surface, a main surface electrode located on the main surface, a plurality of penetration electrodes connected to the main surface electrode and extending through the substrate, three or more LED chips arranged... Agent: Rohm Co., Ltd.

20130020596 - Luminous devices, packages and systems containing the same, and fabricating methods thereof: The present invention is directed to a vertical-type luminous device and high through-put methods of manufacturing the luminous device. These luminous devices can be utilized in a variety of luminous packages, which can be placed in luminous systems. The luminous devices are designed to maximize light emitting efficiency and/or thermal... Agent:

20130020605 - Led module: An LED module according to the present invention includes an LED unit 2 and a case 1, where the LED unit includes an LED chip 21, and the case 1 includes a main body 11 made of a ceramic material and a pad 12a on which the LED unit 2... Agent: Rohm Co., Ltd.

20130020601 - Light emitting device: A light emitting device is configured to achieve a white color by mixing light from respective phosphors. The light emitting device includes: a light emitting element for emitting ultraviolet or short-wavelength visible light having a peak wavelength in a wavelength range of 380 to 420 nm; a first phosphor excited... Agent: Koito Manufacturing Co., Ltd.

20130020603 - Light emitting device: A light emitting device according to the embodiment includes a first electrode; a light emitting structure including a first semiconductor layer over the first electrode, an active layer over the first semiconductor layer, and a second semiconductor layer over the second semiconductor layer; a second electrode over the second semiconductor... Agent:

20130020598 - Light emitting device package and fabrication method thereof: A light emitting device package includes: an undoped semiconductor substrate having first and second surfaces opposed to each other; first and second conductive vias penetrating the undoped semiconductor substrate; a light emitting device mounted on one region of the first surface; a bi-directional Zener diode formed by doping an impurity... Agent: Samsung Electronics Co., Ltd.

20130020600 - Light emitting diode package: A light emitting diode (LED) package is disclosed. The LED package includes a first metal line layer and a second metal line layer bonded to a circuit substrate, a thin film substrate disposed on the first metal line layer and the second metal line layer and configured to include an... Agent: Samsung Electronics Co., Ltd.

20130020597 - Posts in glue layer for group-iii nitride leds: A semiconductor light emitting device and a method for making the semiconductor light emitting device are described. The semiconductor light emitting device includes an epitaxial structure having a first type doped layer, a light emitting layer, and a second type doped layer. The epitaxial structure may further include an undoped... Agent: Ncku Research And Development Foundation

20130020599 - Semiconductor light emitting device: A semiconductor light emitting device is provided. The semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A first electrode is electrically connected to the first conductivity-type semiconductor layer. A light-transmissive conductive layer is disposed... Agent: Samsung Electronics Co., Ltd.

20130020604 - Slim led package: Disclosed herein is a slim LED package. The slim LED package includes first and second lead frames separated from each other, a chip mounting recess formed on one upper surface region of the first lead frame by reducing a thickness of the one upper surface region below other upper surface... Agent: Seoul Semiconductor Co., Ltd.

20130020602 - Transparent light emitting diodes: A transparent light emitting diode (LED) includes a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers... Agent: The Regents Of The University Of California

20130020606 - Circuit board with thermo-conductive pillar: An LED device with improved circuit board LED support structure is presented. A top surface of a thermally-conductive substrate of this LED device comprises a thermally-conductive pillar. The pillar is not covered with a dielectric layer and an LED package is arranged directly on the pillar with the LED packages... Agent:

20130020608 - Group iii nitride semiconductor light-emitting device: A Group III nitride semiconductor light-emitting device exhibiting reduced contact resistance between a p contact layer and an ITO electrode. The Group III nitride semiconductor light-emitting device has an AlGaN dot-like structure on the p contact layer, and an ITO electrode on the p contact layer and the dot-like structure.... Agent: Toyoda Gosei Co., Ltd.

20130020607 - Led module and method for manufacturing the same: An LED (light emitting diode) module includes a circuit board and a plurality of LEDs mounted on the circuit board. The circuit board includes a support layer, an insulative layer and a conductive layer sequentially stacked on each other. The circuit board is embossed to form a plurality of pleats... Agent: Advanced Optoelectronic Technology, Inc.

20130020609 - Semiconductor light-emitting device having stacked transparent electrodes: This application is related to a semiconductor light-emitting device including a substrate, a semiconductor epitaxial layer over the substrate and having a first surface distant from the substrate, a first transparent conductive layer formed on the first surface, and a second transparent conductive layer formed on the first transparent conductive... Agent: Epistar Corporation

20130020610 - Silicone resin composition, silicone resin sheet, method for producing silicone resin sheet, and optical semiconductor device: A silicone resin composition includes (1) an organopolysiloxane having at least two alkenylsilyl groups in one molecule, (2) an organopolysiloxane having at least two hydrosilyl groups in one molecule, (3) a hydrosilylation catalyst, and (4) a curing retarder, wherein the curing retarder contains tetraalkylammonium hydroxide.... Agent: Nitto Denko Corporation

20130020611 - Semiconductor device and method of forming a structure in a target substrate for manufacturing a semiconductor device: A semiconductor device and a method of forming a structure in a target substrate for manufacturing a semiconductor device is provided. The method comprises the step of providing a masking layer on the target substrate and providing a stair-like profile in the masking layer such that the height of a... Agent: Fairchild Semiconductor Corporation

20130020612 - Re-growing source/drain regions from un-relaxed silicon layer: A method of forming an n-type metal-oxide-semiconductor (NMOS) field-effect transistor (FET) includes forming a silicon germanium layer, and forming a silicon layer over the silicon germanium layer. A gate stack is formed over the silicon layer. The silicon layer is recessed to form a recess adjacent the gate stack. A... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130020613 - Semiconductor device and manufacturing method thereof: This disclosure relates to a semiconductor device and a manufacturing method thereof. The semiconductor device comprises: a patterned stacked structure formed on a semiconductor substrate, the stacked structure comprising a silicon-containing semiconductor layer overlaying the semiconductor substrate, a gate dielectric layer overlaying the silicon-containing semiconductor layer and a gate layer... Agent: Semiconductor Manufacturing International (beijing) Corporation

20130020614 - Dual-gate normally-off nitride transistors: A dual-gate normally-off nitride transistor that includes a first gate structure formed between a source electrode and a drain electrode for controlling a normally-off channel region of the dual-gate normally-off nitride transistor. A second gate structure is formed between the first gate structure and the drain electrode for modulating a... Agent: Massachusetts Institute Of Technology

20130020615 - Borderless contacts in semiconductor devices: A method includes depositing a dummy fill material over exposed portions of a substrate and a gate stack disposed on the substrate, removing portions of the dummy fill material to expose portions of the substrate, forming a layer of spacer material over the exposed portions of the substrate, the dummy... Agent: International Business Machines Corporation

20130020619 - Method for manufacturing semiconductor device: A method for manufacturing a semiconductor device is disclosed, which reduces a step difference between a peripheral region and a cell region. In the semiconductor device, a metal contact of the peripheral region is configured in a multi-layered structure. Prior to forming a bit line and a storage node contact... Agent: Hynix Semiconductor Inc.

20130020617 - Nickel alloy target including a secondary metal: A target includes nickel and a secondary metal. The secondary metal has a volume percentage between about 1 percent and about 10 percent. The secondary metal has a density between about 5,000 kg/m3 and about 15,000 kg/m3.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130020618 - Semiconductor device, formation method thereof, and package structure: A semiconductor device, a formation method thereof, and a package structure are provided. The semiconductor device comprises: a semiconductor substrate in which a metal-oxide-semiconductor field-effect transistor (MOSFET) is formed; a dielectric layer, provided on the semiconductor substrate and covering the MOSFET, wherein a plurality of interconnection structures are formed in... Agent:

20130020616 - Silicided device with shallow impurity regions at interface between silicide and stressed liner: A method of forming a semiconductor device includes forming a silicide contact region of a field effect transistor (FET); forming a shallow impurity region in a top surface of the silicide contact region; and forming a stressed liner over the FET such that the shallow impurity region is located at... Agent: International Business Machines Corporation

20130020620 - Optical waveguides in image sensors: An embodiment relates to an image sensor comprising (a) a optical pipe comprising a core and a cladding, and (b) a pair of photosensitive elements comprising a central photosensitive element and a peripheral photosensitive element, wherein the central photosensitive element is operably coupled to the core and the peripheral photosensitive... Agent: Zena Technologies, Inc.

20130020621 - Solid-state imaging device: In each photosensitive cell, a photodiode 101, a transfer gate 102, a floating diffusion layer section 103, an amplifier transistor 104, and a reset transistor 105 are formed in one active region surrounded by a device isolation region. The floating diffusion layer section 103 included in one photosensitive cell is... Agent: Panasonic Corporation

20130020622 - Semiconductor device and method for manufacturing the same: A semiconductor device comprises a semiconductor substrate, a first transistor including a gate insulating film and a gate electrode sequentially formed on the semiconductor substrate, a sidewall, an interlayer insulating film formed on the semiconductor substrate, and a contact plug which penetrates through the interlayer insulating film and reaches the... Agent: Elpida Memory, Inc.

20130020623 - Structure and method for single gate non-volatile memory device: The present disclosure provides an integrated circuit. The integrated circuit includes a semiconductor substrate having a periphery region and a memory region; a field effect transistor disposed in the periphery region and having silicide features; and a single floating gate non-volatile memory device disposed in the memory region, free of... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130020624 - Memory structure: A memory structure having a memory cell region and a non-memory cell region is provided. The memory structure includes a plurality of memory cells and a conductive material. The plurality of memory cells are disposed in the memory cell region, wherein a plurality of first concave portions are present in... Agent: Macronix International Co., Ltd.

20130020625 - Manufacturing method and structure of non-volatile memory: A non-volatile memory structure includes a substrate; a poly gate structure formed on the substrate; a contact etching stop layer formed over the poly gate structure and including at least a silicon nitride layer and a first silicon oxide layer overlying the silicon nitride layer; and an inter-layer dielectric layer... Agent: United Microelectronics Corp.

20130020626 - Memory cell with decoupled channels: A device having a substrate prepared with a memory cell region having a memory cell is disclosed. The memory cell includes an access transistor and a storage transistor. The access transistor includes first and second source/drain (S/D) regions and the storage transistor includes first and second storage S/D regions. The... Agent: Globalfoundries Singapore Pte. Ltd.

20130020628 - Process for fabricating a transistor comprising nanocrystals: A process for fabricating a transistor may include forming source and drain regions in a substrate, and forming a floating gate having electrically conductive nanoparticles able to accumulate electrical charge. The process may include deoxidizing part of the floating gate located on the source side, and oxidizing the space resulting... Agent: Stmicroelectronics (rousset) Sas

20130020629 - Semiconductor memory device and method for manufacturing the same: According to one embodiment, a semiconductor memory device includes a plurality of word lines formed on a semiconductor substrate at predetermined intervals, selecting transistors arranged on at least one side of the plurality of word lines, an interlayer insulating film formed to cover upper surfaces of the word lines and... Agent: Kabushiki Kaisha Toshiba

20130020627 - Shift register memory and method of manufacturing the same: In one embodiment, a shift register memory includes first and second control electrodes extending in a first direction parallel to a surface of a substrate, and facing each other in a second direction perpendicular to the first direction. The memory further includes a plurality of first floating electrodes provided in... Agent: Kabushiki Kaisha Toshiba

20130020630 - Gate dielectric of semiconductor device: A method of fabricating a semiconductor device having a different gate structure in each of a plurality of device regions is described. The method may include a replacement gate process. The method includes forming a hard mask layer on oxide layers formed on one or more regions of the substrate.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd., ("tsmc")

20130020631 - Memory cell and method of manufacturing a memory cell: A memory cell and a method of manufacturing a memory cell are provided. The memory cell includes a substrate; at least one first electrode disposed above the substrate; at least one second electrode disposed above the at least one first electrode; a moveable electrode disposed between the at least one... Agent: Agency For Science, Technology And Research

20130020632 - Lateral transistor with capacitively depleted drift region: A lateral transistor includes a gate formed over a gate oxide and a field plate formed over a thick gate oxide. The field plate is electrically connected to a source. The field plate is configured to capacitively deplete a drift region when the lateral transistor is in the OFF state.... Agent:

20130020633 - Semiconductor device: A super-junction semiconductor substrate is configured in such a manner that an n-type semiconductor layer of a parallel pn structure is opposed to a boundary region between an active area and a peripheral breakdown-resistant structure area. A high-concentration region is formed at the center between p-type semiconductor layers that are... Agent: Fuji Electric Co., Ltd.

20130020634 - Semiconductor device and electric power conversion system using the same: A semiconductor device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type on the first semiconductor layer; trenches in the first semiconductor layer; a semiconductor protruding part on the first semiconductor layer; a third semiconductor layer on the semiconductor protruding... Agent: Hitachi, Ltd.

20130020635 - Semiconductor device with field threshold mosfet for high voltage termination: This invention discloses a semiconductor power device disposed in a semiconductor substrate comprising a lightly doped layer formed on a heavily doped layer and having an active cell area and an edge termination area. The edge termination area comprises a plurality P-channel MOSFETs. By connecting the gate to the drain... Agent: Alpha & Omega Semiconductor, Inc.

20130020637 - Electronic device and a transistor including a trench and a sidewall doped region: An electronic device can include a first layer having a primary surface, a well region lying adjacent to the primary surface, and a buried doped region spaced apart from the primary surface and the well region. The electronic device can also include a trench extending towards the buried doped region,... Agent:

20130020636 - High voltage device and manufacturing method thereof: The present invention discloses a high voltage device and a manufacturing method thereof. The high voltage device is formed in a well of a substrate. The high voltage device includes: a field oxide region; a gate, which is formed on a surface of the substrate, and part of the gate... Agent: Richtek Technology Corporation, R.o.c.

20130020638 - Electronic devices and systems, and methods for making and using the same: Some structures and methods to reduce power consumption in devices can be implemented largely by reusing existing bulk CMOS process flows and manufacturing technology, allowing the semiconductor industry as well as the broader electronics industry to avoid a costly and risky switch to alternative technologies. Some of the structures and... Agent: Suvolta, Inc.

20130020639 - Electronic devices and systems, and methods for making and using the same: Some structures and methods to reduce power consumption in devices can be implemented largely by reusing existing bulk CMOS process flows and manufacturing technology, allowing the semiconductor industry as well as the broader electronics industry to avoid a costly and risky switch to alternative technologies. Some of the structures and... Agent: Suvolta, Inc

20130020642 - Finfet spacer formation by oriented implantation: A FinFET having spacers with a substantially uniform profile along the length of a gate stack which covers a portion of a fin of semiconductor material formed on a substrate is provided by depositing spacer material conformally on both the fins and gate stack and performing an angled ion impurity... Agent: International Business Machines Corporation

20130020640 - Semiconductor device structure insulated from a bulk silicon substrate and method of forming the same: A structure making up a part of a semiconductor device, such as a fin structure of a finFET device, is formed on and electrically isolated from a semiconductor substrate. The structure is comprised of the semiconductor substrate material and is electrically isolated from a remaining portion of the semiconductor substrate... Agent:

20130020641 - Substrate for display panel, manufacturing method of same, display panel, and display device: The present invention provides: a display panel substrate that has an excellent boundary surface adhesion between an insulating film and electrodes formed on the substrate, that particularly requires a configuration in which the lower electrode, the insulating film, and an upper electrode are layered on the substrate in this order... Agent: Sharp Kabushiki Kaisha

20130020643 - Transistor and its method of manufacture: A transistor includes a substrate, a source terminal and a drain terminal, each terminal being supported by the substrate, and the source and drain terminal being separated by a portion of the substrate, a layer of semiconductive material deposited so as to cover the portion of the substrate and to... Agent:

20130020644 - Semiconductor device: A semiconductor device with an SRAM memory cell having improved characteristics. Below an active region in which a driver transistor including a SRAM is placed, an n type back gate region surrounded by an element isolation region is provided via an insulating layer. It is coupled to the gate electrode... Agent: Renesas Electronics Corporation

20130020645 - Esd field-effect transistor and integrated diffusion resistor: An electrostatic discharge protection device, methods of fabricating an electrostatic discharge protection device, and design structures for an electrostatic discharge protection device. A drain of a first field-effect transistor and a diffusion resistor of higher electrical resistance may be formed as different portions of a doped region. The diffusion resistor,... Agent: International Business Machines Corporation

20130020646 - Multi-channel homogenous path for enhanced mutual triggering of electrostatic discharge fingers: Mutual triggering of electrostatic discharge (ESD) fingers is improved by creating a base contact in each individual finger and connecting all of these base contacts in parallel. The local base contact in each ESD finger is located at a position where the base voltage significantly increases when the ESD current... Agent: Microchip Technology Incorporated

20130020647 - Semiconductor devices and methods of fabricating the same: Semiconductor devices are provided. The semiconductor device includes conductive patterns vertically stacked on a substrate to be spaced apart from each other, and pad patterns electrically connected to respective ones of the conductive patterns. Each of the pad patterns includes a flat portion extending from an end of the conductive... Agent:

20130020649 - Nitride electronic device and method for manufacturing the same: The present disclosure relates to a nitride electronic device and a method for manufacturing the same, and particularly, to a nitride electronic device and a method for manufacturing the same that can implement various types of nitride integrated structures on the same substrate through a regrowth technology (epitaxially lateral over-growth:... Agent: Electronics And Telecommunications Research Institute

20130020648 - Semiconductor device: A semiconductor device is disclosed. The semiconductor device includes: a substrate; a metal-oxide semiconductor (MOS) transistor disposed in the substrate; and a shallow trench isolation (STI) disposed in the substrate and around the MOS transistor, in which the STI comprises a stress material.... Agent:

20130020650 - Semiconductor device and method of manufacturing semiconductor device: The semiconductor device includes a first transistor including a first impurity layer containing boron or phosphorus, a first epitaxial layer formed above the first impurity layer, a first gate electrode formed above the first epitaxial layer with a first gate insulating film formed therebetween and first source/drain regions, and a... Agent: Fujitsu Semiconductor Limited

20130020651 - Metal gate structure of a cmos semiconductor device and method of forming the same: The invention relates to integrated circuit fabrication, and more particularly to a metal gate structure. An exemplary structure for a CMOS semiconductor device comprises a substrate, an N-metal gate electrode, and a P-metal gate electrode. The substrate comprises an isolation region surrounding a P-active region and an N-active region. The... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130020652 - Method for suppressing short channel effect of cmos device: A method for manufacturing a gate-last high-K CMOS structure comprising a first transistor and a second transistor, which is formed in a Si substrate includes: implanting acceptor impurity into a gate recess of the first transistor to form a first buried-layer heavily doping region under a channel of the first... Agent: Shanghai Huali Microelectronics Corporation

20130020654 - Semiconductor device: A semiconductor device includes first and second MIS transistors and a dummy element. The first MIS transistor includes a first gate insulating film which includes a first high-k insulating film formed on a first active region and contains an adjusting metal. The second MIS transistor includes a second gate insulating... Agent: Panasonic Corporation

20130020653 - Shallow trench isolation structure, manufacturing method thereof and a device based on the structure: The present invention relates to a shallow trench isolation structure, manufacturing method thereof and a device based on the structure. The present invention provides a method for manufacturing a shallow trench isolation (STI) structure, characterized in comprising the following steps: providing a semiconductor substrate; forming an insulating medium on said... Agent:

20130020655 - Semiconductor device and manufacturing method thereof: The present invention relates to a semiconductor device and its manufacturing method. The semiconductor device comprises: a gate structure located on a substrate, Ge-containing semiconductor layers located on the opposite sides of the gate structure, a doped semiconductor layer epitaxially grown between the Ge-containing semiconductor layers, the bottom surfaces of... Agent: Semiconductor Manufacturing International (beijing) Corporation

20130020656 - High performance hkmg stack for gate first integration: Semiconductor devices are formed with a silicide interface between the work function layer and polycrystalline silicon. Embodiments include forming a high-k/metal gate stack by: forming a high-k dielectric layer on a substrate, forming a work function metal layer on the high-k dielectric layer, forming a silicide on the work function... Agent: Globalfoundries Inc.

20130020657 - Metal oxide semiconductor transistor and method of manufacturing the same: A method for manufacturing a MOS transistor is provided. A substrate has a high-k dielectric layer and a barrier in each of a first opening and a second opening formed by removing a dummy gate and located in a first transistor region and a second transistor region. A dielectric barrier... Agent: United Microelectronics Corp.

20130020658 - Replacement gate electrode with planar work function material layers: In a replacement gate scheme, a continuous material layer is deposited on a bottom surface and a sidewall surface in a gate cavity. A vertical portion of the continuous material layer is removed to form a gate component of which a vertical portion does not extend to a top of... Agent: International Business Machines Corporation

20130020659 - Magnetoresistive element and magnetic memory: A magnetoresistive element according to an embodiment includes: a first ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a second ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a nonmagnetic layer placed between the... Agent:

20130020660 - Reinforced isolation for current sensor with magnetic field transducer: A current sensor packaged in an integrated circuit package to include a magnetic field sensing circuit, a current conductor and an insulator that meets the safety isolation requirements for reinforced insulation under the UL 60950-1 Standard is presented. The insulator is provided as an insulation structure having at least two... Agent: Allegro Microsystems, Inc.

20130020661 - Detector, method for manufacturing a detector and imaging apparatus: A detector (100) for detecting neutrons comprises a neutron reactive material (102) adapted to interact with neutrons to be detected and release ionizing radiation reaction products in relation to said interactions with neutrons. The detector also comprises a first semiconductor element (101) being coupled with said neutron reactive material (102)... Agent: Finphys Oy

20130020662 - Novel cmos image sensor structure: Provided is a method of fabricating an image sensor device. The method includes providing a first substrate having a radiation-sensing region disposed therein. The method includes providing a second substrate having a hydrogen implant layer, the hydrogen implant layer dividing the second substrate into a first portion and a second... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130020663 - Solid-state imaging device and production method therefor, and electronic apparatus: A solid-state imaging device includes a semiconductor substrate and a photoelectric conversion layer above the semiconductor substrate. The photoelectric conversion layer includes a lower electrode having a side surface insulated with an insulating film, a photoelectric conversion film on the lower electrode, and an upper electrode. The upper electrode and... Agent: Sony Corporation

20130020664 - Application of electrical field power to light-transmitting medium: A device includes an input waveguide on a base. The input waveguide guides a light signal through a light-transmitting medium to a light sensor. The light sensor includes a sensor waveguide on the base. The device also includes a sensor waveguide on the base. The sensor waveguide includes a light-absorbing... Agent:

20130020666 - Direct readout focal plane array: According to one embodiment, an image detector comprises a plurality of photosensitive detector unit cells interconnected to a plurality of integrated circuits by a plurality of direct bond interconnects. Each unit cell includes an absorber layer and a separation layer. The absorber layer absorbs incident photons such that the absorbed... Agent: Raytheon Company

20130020665 - Low stress cavity package for back side illuminated image sensor, and method of making same: An image sensor package includes an image sensor chip and crystalline handler. The image sensor chip includes a substrate, and a plurality of photo detectors and contact pads at the front surface of the substrate. The crystalline handler includes opposing first and second surfaces, and a cavity formed into the... Agent:

20130020668 - Optical device having light sensor with doped regions: The optical device includes a waveguide on a base. The waveguide is configured to guide a light signal through a light-transmitting medium to a light sensor. The light sensor includes a sensor waveguide on the base. The sensor waveguide receives the light signal from the input waveguide. Additionally, the sensor... Agent:

20130020667 - Solid-state imaging device and electronic apparatus: A solid-state imaging device includes a photoelectric conversion film which is interposed between two transparent electrodes outside a semiconductor substrate, wherein a film surface of the photoelectric conversion film is provided so as to incline with respect to a front surface of the semiconductor substrate.... Agent: Sony Corporation

20130020669 - Method for manufacturing semiconductor device, resin sealing apparatus, and semiconductor device: When a resin sealed package is molded with use of a release film for the purpose of preventing generation of a flash on a surface of a seal glass, the seal glass may be broken by being compressed and bent by the release film at a portion of the seal... Agent: Asahi Engineering K. K.

20130020670 - Temperature sensor element, method for manufacturing same, and temperature sensor: A temperature sensing element includes a thermistor composed of Si-base ceramics and a pair of metal electrodes bonded onto the surfaces of the thermistor. The metal electrodes contain Cr and a metal element α having a Si diffusion coefficient higher than that of Cr. A diffusion layer is formed in... Agent: Denso Corporation

20130020671 - Termination of high voltage (hv) devices with new configurations and methods: This invention discloses a semiconductor power device disposed in a semiconductor substrate comprising a heavily doped region formed on a lightly doped region and having an active cell area and an edge termination area. The edge termination area comprises a plurality of termination trenches formed in the heavily doped region... Agent: Alpha & Omega Semiconductor, Inc.

20130020672 - System and method for packaging of high-voltage semiconductor devices: A method and an electronic device structure comprising at least one access lead to adapted to be connected to an electrical circuit; at least one substrate region; at least one semiconductor die positioned on the substrate; the at least one semiconductor die being operatively connected to the at least one... Agent: U.s. Govermment As Represented By The Secretary Of The Army

20130020673 - Protection diode and semiconductor device having the same: A protection diode includes a semiconductor substrate having a first region, a second region surrounding the first region, and a third region surrounding the second region; a first insulation layer disposed between the second region and the third region; a first conductive type semiconductor portion disposed in the third region;... Agent:

20130020674 - Fused buss for plating features on a semiconductor die: A semiconductor structure includes a semiconductor substrate; a semiconductor device formed in and over the substrate; a plurality of interconnect layers over the semiconductor device; an interconnect pad over a top surface of the plurality of interconnect layers, wherein the interconnect pad is coupled to the semiconductor device through the... Agent:

20130020675 - Inductive structure formed using through silicon vias: An inductor for an integrated circuit can include a first turn comprising a first through silicon via (TSV) coupled to a second TSV. The inductor can include a third TSV coupled to the second TSV.... Agent: Xilinx, Inc.

20130020676 - Solenoid inductor for frequency synthesizer in digital cmos process: The present invention relates to a solenoid inductor for a frequency synthesizer in a digital CMOS process. The solenoid inductor includes: a plurality of wiring metals configured in a solenoid structure with a given width wherein the wiring metals are stacked at two side regions in a vertical direction; and... Agent:

20130020677 - Embedded capacitor structure and the forming method thereof: A method for forming an embedded capacitor structure is provided. Firstly, a first dielectric layer having a trench therein on a substrate is provided. A capacitor structure is formed on the bottom surface of the trench. The capacitor structure includes a first metal layer, a capacitance-insulating layer and a second... Agent: United Microelectronics Corp.

20130020679 - Semiconductor device and production method thereof: When producing ferroelectric memory devices on a wafer, a memory cell expected to provide the severest degradation of fatigue characteristics is selected from a chip region of the wafer in which the fatigue characteristics are expected to be the poorest, based on the knowledge acquired in advance with regard to... Agent: Fujitsu Semiconductor Limited

20130020678 - Semiconductor devices with orientation-free decoupling capacitors and methods of manufacture thereof: Semiconductor devices with orientation-free decoupling capacitors and methods of manufacture thereof are disclosed. In one embodiment, a semiconductor device includes at least one integrated circuit and at least one decoupling capacitor. The at least one decoupling capacitor is oriented in a different direction than the at least one integrated circuit... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130020680 - Semiconductor structure and a method for manufacturing the same: A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure comprises a diode. The diode comprises a first doped region, a second doped region and a third doped region. The first doped region and the third doped region have a first conductivity type. The second... Agent: Macronix International Co., Ltd.

20130020681 - Process for preparing a bonding type semiconductor substrate: Provided is a laminate comprising a first compound semiconductor layer; and a second compound semiconductor layer integrally bonded to the first compound semiconductor layer via a bonding layer. A plane A is in the second compound semiconductor layer bonded to a surface where a plane B is in the first... Agent: Kabushiki Kaisha Toshiba

20130020682 - Wafer backside defectivity clean-up utilizing slective removal of substrate material: A wafer and a fabrication method include a base structure including a substrate for fabricating semiconductor devices. The base structure includes a front side where the semiconductor devices are formed and a back side opposite the front side. An integrated layer is formed in the back side of the base... Agent: International Business Machines Corporation

20130020683 - Substrate for semiconductor package and semiconductor package having the same: A semiconductor package includes a substrate including a substrate body having a first face and a second face opposing the first face. A first through electrode passes through the substrate body between the first face and the second face. An insulation member is disposed over the first face; and a... Agent: Hynix Semiconductor Inc.

20130020684 - Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the same: The actinic ray-sensitive or radiation-sensitive resin composition according to the present invention includes a resin (A) which contains at least one type of repeating unit which is represented by the general formula (PG1), at least one type of repeating unit which is selected from the repeating units which are represented... Agent: Fujifilm Corporation

20130020685 - Substrates for semiconductor devices including internal shielding structures and semiconductor devices including the substrates: A semiconductor device includes a substrate comprising a stack of alternating wiring layers and insulating layers. The wiring layers include conductive wiring patterns. Primary conductive vias extend through respective ones of the insulating layers and electrically connect first ones of the wiring patterns on different ones of the wiring layers... Agent: Samsung Electronics Co., Ltd.

20130020688 - Chip package structure and manufacturing method thereof: A chip package structure including a leadframe, a chip, bonding wires and an encapsulant is provided. The leadframe includes a die pad, leads and an insulating layer. The die pad includes a chip mounting portion and a periphery portion. At the periphery portion, the die pad has a second upper... Agent: Chipmos Technologies Inc.

20130020691 - Method of manufacturing a semiconductor device: A non-leaded semiconductor device comprises a sealing body for sealing a semiconductor chip, a tab in the interior of the sealing body, suspension leads for supporting the tab, leads having respective surfaces exposed to outer edge portions of a back surface of the sealing body, and wires connecting pads formed... Agent: Renesas Electronics Corporation

20130020686 - Package structure and package process: A package structure and a package process are provided. The package structure comprises a carrier having a carrying portion and a plurality of supporting bar remnants disposed around and extending outward from the carrying portion, a chip mounted to the carrying portion, and an encapsulant disposed on the carrier and... Agent: Aptos Technology Inc.

20130020687 - Power module package and method for manufacturing the same: Disclosed herein are a power module package and a method for manufacturing the same. The power module package includes first and second lead frames disposed to face each other; ceramic coating layers formed on a portion of a first surface of both or one of both of the first and... Agent: Samsung Electro-mechanics Co., Ltd.

20130020692 - Semiconductor device and method of manufacturing the same: A trench portion (trench) is formed at each of four corner portions of a chip bonding region having a quadrangular planar shape smaller than an outer-shape size of a die pad included in a semiconductor device. Each trench is formed along a direction of intersecting with a diagonal line which... Agent: Renesas Electronics Corporation

20130020689 - Semiconductor device and method of packaging same: A Quad Flat Pack (QFP) device includes a semiconductor die attached to a flag of a lead frame. Bonding pads of the die are electrically connected to inner and outer rows of leads of the lead frame with bond wires. The die, die flag, bond wires and portions of the... Agent: Freescale Semiconductor, Inc

20130020690 - Stacked die semiconductor package: A semiconductor package and method of assembling a semiconductor package includes encapsulating a first pre-packaged semiconductor die stacked on top of and interconnected with a second semiconductor die. The first packaged semiconductor die is positioned and fixed relative to a lead frame with a temporary carrier such as tape. The... Agent: Freescale Semiconductor, Inc

20130020693 - Chip package structure and method for forming the same: A chip package structure and a method for forming the chip package structure are disclosed. At least a block is formed on a surface of a cover, the cover is mounted on a substrate having a sensing device formed thereon for covering the sensing device, and the block is disposed... Agent: Xintec Inc.

20130020694 - Power module packaging with double sided planar interconnection and heat exchangers: A double sided cooled power module package having a single phase leg topology includes two IGBT and two diode semiconductor dies. Each IGBT die is spaced apart from a diode semiconductor die, forming a switch unit. Two switch units are placed in a planar face-up and face-down configuration. A pair... Agent:

20130020695 - \"l\" shaped lead integrated circuit package: Various aspects provide for bending a bending a lead frame of a semiconductor device package into a shape of an “L” and mounting the package on a substrate. A horizontal portion of the bent lead-frame is about parallel with a surface of the package. A vertical portion of the bent... Agent:

20130020696 - Semiconductor device: A semiconductor device includes a substrate, a semiconductor element disposed on the substrate, a heat radiating plate disposed on the substrate and covering the semiconductor element, and a connection member connecting an upper surface of the semiconductor element and a lower surface of the heat radiating plate, wherein the connection... Agent: Fujitsu Semiconductor Limited

20130020700 - Chip package and fabrication method thereof: An embodiment of the present invention relates to a chip package and fabrication method thereof, which includes a semiconductor substrate containing a chip area and a peripheral pad area surrounding the chip area, wherein a conductive pad and a through hole exposing the conductive pad are formed in the peripheral... Agent:

20130020699 - Package structure and method for fabricating the same: The invention provides a package structure, including: a substrate, wherein the substrate has a first surface and a second surface, and a first pattern metal layer is formed on the first surface, and a second patterned metal layer is formed on the second surface, and the substrate has a plurality... Agent: Mediatek Inc.

20130020698 - Pillar design for conductive bump: A system and method for conductive pillars is provided. An embodiment comprises a conductive pillar having trenches located around its outer edge. The trenches are used to channel conductive material such as solder when a conductive bump is formed onto the conductive pillar. The conductive pillar may then be electrically... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130020701 - Semiconductor device and a method of manufacturing the same: A technique which improves the reliability in coupling between a bump electrode of a semiconductor chip and wiring of a mounting substrate, more particularly a technique which guarantees the flatness of a bump electrode even when wiring lies in a top wiring layer under the bump electrode, thereby improving the... Agent: Renesas Electronics Corporation

20130020697 - Techniques and structures for testing integrated circuits in flip-chip assemblies: A method for rejoining an IC die, removed from an existing substrate, to a new substrate, is disclosed herein. In one embodiment, such a method includes grinding an existing substrate from an IC die to create a substantially planar surface exposing interconnects and surrounding underfill material. A new substrate is... Agent: International Business Machines Corporation

20130020702 - Double-sided flip chip package: Semiconductor device modules having two or more integrated circuit dies mounted on opposing sides of a substrate. The integrated circuit dies are mounted by use of surface mount connections, such as flip chip connections implemented using conductive bumps. Systems may include one or more of the present semiconductor device modules,... Agent:

20130020703 - Method for making a stackable package: The present invention relates to a method for making a stackable package. The method includes the following steps: (a) providing a first carrier; (b) disposing at least one chip on the first carrier; (c) forming a molding compound so as to encapsulate the chip; (d) removing the first carrier; (e)... Agent:

20130020704 - Bonding surfaces for direct bonding of semiconductor structures: Methods of directly bonding a first semiconductor structure to a second semiconductor structure include directly bonding at least one device structure of a first semiconductor structure to at least one device structure of a second semiconductor structure in a conductive material-to-conductive material direct bonding process. In some embodiments, at least... Agent: S.o.i.tec Silicon On Insulator Technologies

20130020705 - Method to form uniform silicide by selective implantation: Methods form an integrated circuit structure by forming at least a portion of a plurality of devices within and/or on a substrate and patterning trenches in an inter-layer dielectric layer on the substrate adjacent the devices. The patterning forms relatively narrow trenches and relatively wide trenches. The methods then perform... Agent: International Business Machines Corporation

20130020707 - Novel semiconductor system and device: A 3D IC based system including: a first semiconductor layer including first alignment marks and first transistors, wherein the first transistors are interconnected by at least one metal layer including aluminum or copper; a second mono-crystallized semiconductor layer including second transistors and overlaying the at least one metal layer, wherein... Agent: Monolithic 3d Inc.

20130020706 - Semiconductor device and manufacturing method thereof: In accordance with an embodiment, a semiconductor device includes a substrate, a line-and-space structure, a first film and a second film. The line-and-space structure includes line patterns arranged on the substrate parallel to one another at a predetermined distance. The first film is formed on side surfaces and bottom surfaces... Agent:

20130020708 - Copper interconnects separated by air gaps and method of making thereof: A semiconductor device including a plurality of copper interconnects. At least a first portion of the plurality of copper interconnects has a meniscus in a top surface. The semiconductor device also includes a plurality of air gaps, wherein each air gap of the plurality of air gaps is located between... Agent: Sandisk Technologies, Inc

20130020709 - Semiconductor package and method of fabricating the same: A semiconductor package and a method of fabricating the same. The semiconductor package includes a carrier having a plurality bonding pads disposed on a surface thereof, a packaging layer formed on the surface of the carrier and having a plurality of openings corresponding to the bonding pads, a conductive material... Agent: Siliconware Precision Industries Co., Ltd.

20130020710 - Semiconductor substrate, package and device and manufacturing methods thereof: A semiconductor structure and a manufacturing method of the same are provided. The semiconductor structure includes a carrier. The carrier has a first surface and a second surface opposite to the first surface. The carrier includes an inner core layer and an exterior clad layer, and the inner core layer... Agent: Advanpack Solutions Pte Ltd.

20130020714 - Contact pad: A contact pad for an electronic device integrated in a semiconductor material chip is formed from a succession of protruding elements. Each protruding element extends transversally to a main surface of the chip and has a rounded terminal portion. Adjacent pairs protruding elements define an opening which is partially filled... Agent: Stmicroelectronics S.r.l.

20130020712 - Implementing integrated circuit mixed double density and high performance wire structure: A method and structures are provided for implementing an integrated circuit with an enhanced wiring structure of mixed double density and high performance wires in a common plane. A wiring structure includes a first wire having a first plane and a first via to a second wire in a second... Agent: International Business Machines Corporation

20130020711 - Interconnect pillars with directed compliance geometry: Pillars having a directed compliance geometry are arranged to couple a semiconductor die to a substrate. The direction of maximum compliance of each pillar may be aligned with the direction of maximum stress caused by unequal thermal expansion and contraction of the semiconductor die and substrate. Pillars may be designed... Agent: Qualcomm Incorporated

20130020715 - Semiconductor device: A semiconductor device includes a header, a semiconductor chip fixed to the header constituting a MOSFET, and a sealing body of insulating resin which covers the semiconductor chip, the header and the like, and further includes a drain lead contiguously formed with the header and projects from one side surface... Agent: Renesas Electronics Corporation

20130020713 - Wafer level package and a method of forming a wafer level package: In an embodiment, a wafer level package may be provided. The wafer level package may include a device wafer including a MEMS device, a cap wafer disposed over the device wafer, at least one first interconnect disposed between the device wafer and the cap wafer and configured to provide an... Agent:

20130020717 - Integrated circuit having a stressor and method of forming the same: An embodiment of the disclosure includes a method of forming a semiconductor structure. A substrate has a region adjacent to a shallow trench isolation (STI) structure in the substrate. A patterned mask layer is formed over the substrate. The patterned mask layer covers the STI structure and a portion of... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130020718 - Mems devices and methods of forming same: The present invention provides a MEMS structure comprising confined sacrificial oxide layer and a bonded Si layer. Polysilicon stack is used to fill aligned oxide openings and MEMS vias on the sacrificial layer and the bonded Si layer respectively. To increase the design flexibility, some conductive polysilicon layer can be... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130020719 - Microelectronic devices including through silicon via structures having porous layers: A microelectronic device includes a substrate including a via hole extending therethrough, a porous layer on sidewalls of the via hole, and a conductive via electrode extending through the via hole between the sidewalls thereof. The porous layer includes a plurality of pores therein that reduce a dielectric constant of... Agent: Samsung Electronics Co., Ltd.

20130020721 - Semiconductor device and method for manufacturing the same: A semiconductor device includes a semiconductor substrate, a through silicon via that penetrates through the semiconductor substrate in a thickness direction thereof, a first insulating region, a second insulating region formed below the first principal surface of the semiconductor substrate, and an isolation region made of an insulating material buried... Agent: Elpida Memory, Inc.

20130020722 - Semiconductor device, circuit substrate, and electronic device: A semiconductor device has a through electrode formed in a through hole which penetrates a Si substrate from one surface to the other surface of the Si substrate, wherein a rectangular electrode pad is provided on the other surface with an insulation film laid between the electrode pad and the... Agent: Seiko Epson Corporation

20130020720 - Semiconductor packages and methods of forming the same: A semiconductor package may include a substrate including a substrate connection terminal, at least one semiconductor chip stacked on the substrate and having a chip connection terminal, a first insulating layer covering at least portions of the substrate and the at least one semiconductor chip, and/or an interconnection penetrating the... Agent:

20130020716 - System and method to process horizontally aligned graphite nanofibers in a thermal interface material used in 3d chip stacks: The chip stack of semiconductor chips with enhanced cooling apparatus includes a first chip with circuitry on a first side and a second chip electrically and mechanically coupled to the first chip by a grid of connectors. The apparatus further includes a thermal interface material pad placed between the first... Agent: International Business Machines Corporation

20130020723 - Composite layered chip package: A composite layered chip package includes a plurality of subpackages stacked on each other. Each subpackage includes a main body and wiring. The main body includes a main part including a plurality of layer portions, and further includes first terminals and second terminals that are disposed on top and bottom... Agent: Headway Technologies, Inc.

20130020724 - Manufacturing method of semiconductor device, adhesive sheet used therein, and semiconductor device obtained thereby: The present invention includes a temporary fixing step of temporarily fixing a semiconductor element on an adherend interposing an adhesive sheet therebetween, a wire-bonding step of bonding wires to the semiconductor element, and a step of sealing the semiconductor element with a sealing resin, and in which the loss elastic... Agent:

20130020725 - Semiconductor device and method of manufacturing semiconductor device: A semiconductor device includes a substrate, an insulating substrate mounted on the substrate, a metal pattern formed on the insulating substrate, an electronic part mounted on the metal pattern across a bond, and a wire member, separate from a wiring wire, which contains a material repellent to the bond and... Agent: Fuji Electric Co., Ltd.

20130020726 - Package module structure for high power device with metal substrate and method of manufacturing the same: A method of manufacturing a package module structure of a high power device using a metal substrate that can improve reliability by minimizing stress due to a thermal expansion coefficient difference between a metal substrate and a semiconductor device includes: preparing a metal substrate; forming an oxide layer by selectively... Agent: Wavenics Inc.

20130015421 - Phase-change random access memory device and method of manufacturing the same: A phase change random access memory (PCRAM) device and method of manufacturing the same are provided. The PCRAM includes bottom electrode contacts formed on a semiconductor substrate that includes a lower structure, phase-change material patterns in contact with the bottom electrode contacts, respectively, and heat insulating units formed between the... Agent:

20130015423 - Method for manufacturing nonvolatile semiconductor memory element, and nonvolatile semiconductor memory element: Provided is a method for manufacturing a variable resistance nonvolatile semiconductor memory element, and a nonvolatile semiconductor memory element which make it possible to operate at a low voltage and high speed when initial breakdown is caused, and exhibit favorable diode element characteristics. The method for manufacturing the nonvolatile semiconductor... Agent: Panasonic Corporation

20130015422 - Reactive metal implated oxide based memory: Methods, devices, and systems associated with oxide based memory can include a method of forming an oxide based memory cell. Forming an oxide based memory cell can include forming a first conductive element, forming an oxide over the first conductive element, implanting a reactive metal into the oxide, and forming... Agent: Micron Technology, Inc.

20130015424 - Optoelectronic devices: An optoelectronic device is provided including an element that forms a dipole moment between an active layer and a charge transport layer. The optoelectronic device may include an active layer between a first electrode and a second electrode, a first charge transport layer between the first electrode and the active... Agent: Samsung Electronics Co., Ltd.

20130015425 - Light-emitting element with multiple light-emtting stacked layers: A light-emitting element includes a substrate; a first light-emitting stacked layer formed on the substrate; a tunneling layer formed on the first light-emitting stacked layer; a second light-emitting stacked layer formed on the tunneling layer; and a contact layer formed on the second light-emitting stacked layer.... Agent:

20130015426 - Method of manufacturing of a semi-conductor element and semi-conductor element: A method of manufacturing of a semi-conductor element, comprising the following steps: providing a substrate, the substrate having a surface, the surface being partially coated with a coating and having at least one uncoated area, and growing a truncated pyramid of gallium nitride on the uncoated area, wherein the method... Agent: Technische Universit&#xe4 T Braunschweig Carolo-wilhelmina

20130015427 - Nitride-based semiconductor device and method for fabricating the same: A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes an Mg layer... Agent: Panasonic Corporation

20130015428 - Vertical stacking of carbon nanotube arrays for current enhancement and control: Transistor devices having vertically stacked carbon nanotube channels and techniques for the fabrication thereof are provided. In one aspect, a transistor device is provided. The transistor device includes a substrate; a bottom gate embedded in the substrate with a top surface of the bottom gate being substantially coplanar with a... Agent: International Business Machines Corporation

20130015429 - All graphene flash memory device: A Graphene Flash Memory (GFM) device is disclosed. In general, the GFM device includes a number of memory cells, where each memory cell includes a graphene channel, a graphene storage layer, and a graphene electrode. In one embodiment, by using a graphene channel, graphene storage layer, and graphene electrode, the... Agent: The Regents Of The University Of California

20130015430 - Composite organic/inorganic layer for organic light-emitting devices: Organic electronic devices comprising a covalently bonded organic/inorganic composite layer. The composite layer may be formed by the reaction of a metal alkoxide with a charge transport compound having one or more hydroxyl groups. Examples of metal alkoxides that can be used include vanadium alkoxides, molybdenum alkoxides, titanium alkoxides, or... Agent: Universal Display Corporation

20130015432 - Inorganic hosts in oleds: A novel electronic device is reported containing a host comprising an inorganic material with a band gap of less than 4 eV. The use of an inorganic material is advantageous due to its desirable physical properties, including increased stability and charge mobility.... Agent: Universal Display Corporation

20130015431 - Lithium metal quinolates and process for preparation thereof as good emitting, interface materials as well as n-type dopent for organic electronic devices: R═H, alkyl (C1-C6), alkoxy, aryl, aryloxy, amino, amido or halogen (Cl, F, Br, I) which is substituted or unsubstituted with direct reaction of metal with 8-hydroxyquinoline. Substituted 8-hydroxyquinoline optionally have at least one substituent selected from the group consisting of alkyl, alkoxy, aryl, aryloxy, amino, amido at 2, 5 or... Agent:

20130015433 - Pentacene-carbon nanotube composite, method of forming the composite, and semiconductor device including the composite: A method of forming a carbon nanotube-pentacene composite layer, includes depositing on a substrate a dispersion of soluble pentacene precursor and carbon nanotubes, heating the dispersion to remove solvent from the dispersion, and heating the substrate to convert the pentacene precursor to pentacene and form the carbon nanotube-pentacene composite layer.... Agent: International Business Machines Corporation

20130015435 - Photoelectric conversion device and imaging device: A photoelectric conversion device includes an organic photoelectric conversion layer, and suppresses sensitivity degradation caused by the light irradiation. A photoelectric conversion device 100 is formed by stacking a first electrode layer 104, a photoelectric conversion layer 15 including an organic material, and a second electrode layer 108 on a... Agent: Fujifilm Corporation

20130015434 - Polymer matrix electroluminescent materials and devices: Photoluminescent and electroluminescent compositions are provided which comprise a matrix comprising aromatic repeat units and a luminescent metal ion or luminescent metal ion complex. Methods for producing such compositions, and the electroluminescent devices formed therefrom, are disclosed.... Agent: Sumitomo Chemical Co., Ltd.

20130015436 - Semiconductor device: A transistor used for a semiconductor device for high power application needs to have a channel region for obtaining higher drain current. As an example of such a transistor, a vertical (trench type) transistor has been considered; however, the vertical transistor cannot have a high on/off ratio of drain current... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130015437 - Semiconductor device: A semiconductor device including an oxide semiconductor can have stable electric characteristics and high reliability. A transistor in which an oxide semiconductor layer containing indium, titanium, and zinc is used as a channel formation region and a semiconductor device including the transistor are provided. As a buffer layer in contact... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130015438 - Semiconductor device and manufacturing method thereof: One embodiment of the present invention is to achieve high mobility in a device using an oxide semiconductor and provide a highly reliable display device. An oxide semiconductor layer including a crystal region in which c-axis is aligned in a direction substantially perpendicular to a surface is formed and an... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130015439 - Semiconductor device and method for manufacturing the same: An object is to improve the aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate. The driver circuit includes a channel-etched thin film transistor for driver circuit and a driver... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130015440 - Integrated circuit (ic) test probe: A test probe head for probing integrated circuit (IC) chips and method of making test heads. The test head includes an array of vias (e.g., annular vias or grouped rectangular vias) through, and exiting one surface of, a semiconductor layer, e.g., a silicon layer. The vias, individual test probe tips,... Agent: International Business Machines Corporation

20130015441 - Ic card and booking-account system using the ic card: It is an object of the present invention to provide a highly sophisticated functional IC card that can ensure security by preventing forgery such as changing a picture of a face, and display other images as well as the picture of a face. An IC card comprising a display device... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130015442 - Bonded semiconductor structures and method of forming same: Methods of forming semiconductor structures include transferring a portion (116a) of a donor structure to a processed semiconductor structure (102) that includes at least one non-planar surface. An amorphous film (144) may be formed over at least one non-planar surface of the bonded semiconductor structure, and the amorphous film may... Agent: Soitec

20130015444 - Evaporation mask, method of manufacturing evaporation mask, electronic device, and method of manufacturing electronic device: There are provided an evaporation mask with which an evaporated film is allowed to be formed with a fine pattern, a method of manufacturing the same, and a method of manufacturing an electronic device using such an evaporation mask. Further, there is provided an electronic device having a film-formation pattern... Agent: Sony Corporation

20130015443 - Semiconductor device and manufacturing method thereof: A method for manufacturing a semiconductor device comprises: forming a recess in a substrate; implanting at the bottom of the recess to form an amorphous layer to a predetermined depth under the bottom of the recess; carrying out crystal orientation selective wet etching to form a Sigma shaped recess by... Agent: Semiconductor Manufacturing International (beijing) Corporation

20130015452 - Array substrate and method for manufacturing the array substrate: An array substrate including: a gate electrode and a gate insulation layer disposed on a base substrate, the gate insulation layer having a first thickness in a first region and a second thickness in a second region, the first thickness being greater than the second thickness; a semiconductor pattern disposed... Agent: Samsung Electronics Co., Ltd.

20130015447 - Defect-resistant thin film transistor array panel and manufacturing method thereof: A thin film transistor array panel according to an exemplary embodiment of the present invention includes a substrate; a gate line disposed on the substrate; a gate insulating layer disposed on the gate line; a semiconductor disposed on the gate insulating layer; a data line disposed on the semiconductor and... Agent:

20130015453 - Display device, thin-film transistor used for display device, and method of manufacturing thin-film transistor: A display device including a display element and a thin-film transistor for controlling light emission from the display element. The thin-film transistor includes: a gate electrode formed on an insulating support substrate; a gate insulating film formed on the substrate so as to cover the gate electrode; a channel layer... Agent: Panasonic Corporation

20130015450 - Organic light emitting display device: An organic light emitting display device is provided to avoid color change due to a viewing direction. The organic light emitting display includes a light compensation layer having a refractive index different than that of an insulating layer. The organic light emitting display may be disposed at the side to... Agent:

20130015454 - Panel structure, display device including same, and methods of manufacturing panel structure and display device: Via holes for connecting elements of the panel structure may be formed by performing one process. For example, via holes for connecting a transistor and a conductive layer spaced apart from the transistor may be formed by performing only one process.... Agent: Samsung Electronics Co., Ltd.

20130015449 - Pixel structure and method of fabricating the same: The present invention provides a pixel structure including a substrate, a patterned electrode disposed on the substrate, a first insulating layer disposed on the patterned electrode, a common electrode disposed on the first insulating layer, a second insulating layer disposed on the common electrode, and a drain disposed on the... Agent:

20130015448 - Semiconductor device and electroluminescent device and method of making the same: A semiconductor device, disposed on a substrate, includes a first channel layer, a patterned doped layer, a gate insulating layer, a conducting gate electrode, a second channel layer, a first electrode and a second electrode, and a third electrode and a fourth electrode. The first channel layer is disposed on... Agent:

20130015445 - Thin film transistor and method for manufacturing the same: A thin film transistor and a method for manufacturing the same are provided. A top-gate thin film transistor is fabricated by a process using two gray-tone photomasks and a lift-off method. Therefore, the method can save cost of photomasks and processes comparing to a conventional fabrication method.... Agent: Chunghwa Picture Tubes, Ltd.

20130015446 - Thin film transistor manufacturing method and thin film transistor: The present invention provides a thin film transistor (TFT) manufacturing method and a TFT, a source electrode or drain electrode of the TFT is electrically connected to a data line directly during a forming process by providing a through hole in a surface above the data line of the TFT,... Agent: Shenzhen China Star Optoelectronics Technology Co., Ltd.

20130015451 - Thin film transistor matrix device and method for fabricating the same: A thin film transistor matrix device including an insulating substrate; a plurality of lines arranged on the substrate, with the lines being defined as odd-number-th lines alternating with even-number-th lines; a first connection line extending in a direction transverse to the plurality of lines, where the first connection line and... Agent: Sharp Kabushiki Kaisha

20130015455 - Germanium-containing release layer for transfer of a silicon layer to a substrate: A germanium-containing layer is deposited on a single crystalline bulk silicon substrate in an ambient including a level of oxygen partial pressure sufficient to incorporate 1%-50% of oxygen in atomic concentration. The thickness of the germanium-containing layer is preferably limited to maintain some degree of epitaxial alignment with the underlying... Agent: International Business Machines Corporation

20130015458 - Organic light emitting diode display device: An organic light emitting diode display device includes: a switching thin film transistor in a pixel region, the switching thin film transistor including a switching semiconductor layer of polycrystalline silicon; a driving thin film transistor connected to the switching thin film transistor, the driving thin film transistor including a driving... Agent:

20130015456 - Organic light emitting display device and method of manufacturing the same: In an organic light-emitting display device and a method of manufacturing the same, the display device may include: a thin-film transistor including an active layer, a gate electrode including a first electrode which includes nano-Ag on an insulating layer formed on the active layer and a second electrode on the... Agent: Samsung Mobile Display Co., Ltd.

20130015457 - Organic light emitting display device and method of manufacturing the same: An organic light-emitting display device and a method of manufacturing the same. The organic light-emitting display device includes: a thin-film transistor including an active layer, a gate electrode comprising a first electrode and a second electrode on the first electrode, and source and drain electrodes; an organic light-emitting device including... Agent:

20130015459 - Thin film transistor array substrate, organic light-emitting display device including the same, and method of manufacturing the organic light-emitting display device: A thin film transistor (TFT) array substrate includes a TFT on a substrate, the TFT including an active layer, gate electrode, source electrode, drain electrode, first insulating layer between the active layer and the gate electrode, and second insulating layer between the gate electrode and the source and drain electrodes;... Agent:

20130015466 - Epitaxial substrate for semiconductor device and semiconductor device: Provided is an epitaxial substrate for a semiconductor device, which has excellent schottky contact characteristics that are stable over time. The epitaxial substrate for a semiconductor device includes a base substrate, a channel layer formed of a first group III nitride containing at least Ga and having a composition of... Agent: Ngk Insulators, Ltd.

20130015461 - Light-emitting device capable of producing white light and light mixing method for producing white light with same: A light-emitting device capable of producing white light includes at least two types of LED elements and at least one encapsulant material. Each of the LED elements has an epitaxial light-emitting layer grown on a substrate; and the epitaxial light-emitting layers for the LED elements are the same series of... Agent: Kun Hsin Technology Inc.

20130015465 - Nitride semiconductor light-emitting device: A nitride light-emitting device includes an N-type nitride semiconductor layer; an active layer disposed on the N-type nitride semiconductor layer; and a P-type nitride semiconductor layer disposed on the active layer. The P-type nitride semiconductor includes a heterojunction structure having a GaN layer and an N-type AlxInyGaN layer that is... Agent: Samsung Electronics Co., Ltd.

20130015463 - Nitride-based semiconductor device having excellent stability: A nitride-based semiconductor device is provided. The nitride-based semiconductor device may include an aluminum silicon carbide (AlSixC1-x) pre-treated layer, and thus may ease a stress in a nitride semiconductor layer caused by a difference in properties, for example, a lattice constant and a coefficient of expansion, between the substrate and... Agent: Samsung Electronics Co., Ltd.

20130015464 - Power semiconductor device: A power semiconductor device and a manufacturing method thereof are provided. The power semiconductor device includes an anode electrode including an anode electrode pad, electrode bus lines connected to a first side and a second side on the anode electrode pad, the electrode bus lines each having a decreasing width... Agent: Samsung Electronics Co., Ltd.

20130015460 - Semiconductor structure and method of forming the same: An embodiment of the disclosure includes a semiconductor structure. The semiconductor structure includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer and different from the first III-V compound layer in composition. An interface is defined between the first III-V compound... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130015462 - Transistors with dual layer passivation: Semiconductor devices are provided with dual passivation layers. A semiconductor layer is formed on a substrate and covered by a first passivation layer (PL-1). PL-1 and part of the semiconductor layer are etched to form a device mesa. A second passivation layer (PL-2) is formed over PL-1 and exposed edges... Agent: Freescale Semiconductor, Inc.

20130015469 - Method for manufacturing diode, and diode: A semiconductor substrate having a first side and a second side made of single crystal silicon carbide is prepared. A mask layer having a plurality of openings and made of silicon oxide is formed on the second side. The plurality of openings expose a plurality of regions included in the... Agent: Sumitomo Electric Industries, Ltd.

20130015468 - Semiconductor device and method of manufacturing the same: A semiconductor device of the present invention comprises a semiconductor element, a first metal body formed on a back surface of the semiconductor element, a first insulating layer formed on a back surface of the first metal body, a second metal body formed on a back surface of the first... Agent: Mitsubishi Electric Corporation

20130015467 - System and method for wafer level packaging: In an embodiment, a semiconductor device includes a semiconductor substrate. The semiconductor substrate has a first cavity disposed through it, and conductive material covers at least the bottom portion of the first cavity. An integrated circuit is disposed on the top surface of the conductive material. The device further includes... Agent: Infineon Technologies Ag

20130015470 - Semiconductor light emitting element: The semiconductor light emitting device of the present invention includes a semiconductor layer, a first electrode and a second electrode arranged to interpose the semiconductor layer therebetween, an insulating layer provided to the semiconductor layer at the same side as the second electrode and opposite to the first electrodes so... Agent:

20130015471 - Etchant for metal layer including copper or a copper alloy, method of manufacturing a display substrate using the same and display substrate: An etchant includes about 50% by weight to about 70% by weight of phosphoric acid, about 1% by weight to about 5% by weight of nitric acid, about 10% by weight to about 20% by weight of acetic acid, about 0.1% by weight to about 2% by weight of a... Agent:

20130015473 - Light-emitting device: The application provides a light-emitting device, comprising a substrate; a plurality of first light-emitting diode units on the substrate, wherein every first light-emitting diode unit has a first electrode structure; and a plurality of second light-emitting diode units among the plurality of first light-emitting diode units, wherein every second light-emitting... Agent:

20130015472 - Method for packaging light emitting diodes and light emitting module having led packages formed by the method: A method for making a light emitting module includes: a. providing a flexible substrate; b. forming a plurality of rigid portions in the flexible substrate; c. forming an electrically conductive layer on the rigid portions, the electrically conductive layer having several electrodes apart from each other; d. arranging a plurality... Agent: Advanced Optoelectronic Technology, Inc.

20130015475 - Organic el panel and method of manufacturing the same: The present invention prevents a local luminance reduction at defects in pixel electrodes with a rapid and easy method. The present invention provides a method of manufacturing an organic EL panel that includes a TFT panel and organic EL devices disposed over a surface of the TFT panel in matrix... Agent: Panasonic Corporation

20130015474 - White light emitting diode (led) lighting device: An alternating current (AC) white LED lighting device and a method for manufacturing the same are provided. The AC white LED lighting device consists of blue, violet or ultraviolet LED chips, blue afterglow luminescence materials A and yellow luminescence materials B. Wherein the weight ratio of the blue afterglow luminescence... Agent:

20130015476 - Display unit: A display unit that secures favorable display performance and has a simple structure is provided. The display unit includes a multilayer structure in which an organic light emitting device group respectively having a plurality of organic light emitting devices that emits cyan light and a plurality of organic light emitting... Agent: Sony Corporation

20130015477 - Nanostructured light-emitting device: A nanostructured light-emitting device including: a first type semiconductor layer; a plurality of nanostructures each including a first type semiconductor nano-core grown in a three-dimensional (3D) shape on the first type semiconductor layer, an active layer formed to surround a surface of the first type semiconductor nano-core, and a second... Agent: Samsung Electronics Co., Ltd.

20130015484 - Led lamps: A high power LED lamp has a GaN chip placed over an AlGaInP chip. A reflector is placed between the two chips. Each of the chips has trenches diverting light for output. The chip pair can be arranged to produce white light having a spectral distribution in the red to... Agent: Epistar Corporation

20130015485 - Light emitting device package and a lighting unit: Provided are a light emitting device package and a lighting device. The light emitting device package includes a base having a via hole passing through a top surface thereof and a bottom surface thereof, a plurality of electrodes formed on the top surface of the base, the plurality of electrodes... Agent:

20130015488 - Light emitting diode package and method for fabricating the same: The present invention relates to a light emitting diode (LED), which enables a filler material for filling up a hole or opening of a substrate to prevent a resin of an encapsulant formed on the substrate from leaking and to enhance cohesion between the substrate and a resin portion formed... Agent: Seoul Semiconductor Co., Ltd.

20130015479 - Light emitting diode package and method of manufacturing the same: An LED package includes a base, an LED chip, and an electrode layer. The base has thereon a first electrical connecting layer and a separated second electrical connecting layer. The LED chip is placed on the base and electrically connected with the first electrical connecting layer and the second electrical... Agent: Advanced Optoelectronic Technology, Inc.

20130015478 - Light emitting module and head lamp including the same: Disclosed is a light emitting module including a light emitting device package having a circuit board having a cavity, an insulation substrate arranged in the cavity, with a conductive pattern formed thereon, and at least one light emitting device disposed on the insulation substrate, with being electrically connected with the... Agent:

20130015486 - Organic light-emitting element: An organic light-emitting element including an organic light-emitting layer, a transparent substrate, and a transparent electrode disposed between the organic light-emitting layer and the transparent substrate; and which treats the surface of the transparent substrate on the opposite side from the transparent electrode as a light-extraction surface. The transparent substrate... Agent:

20130015482 - Polarized white light emitting diode: A polarized white light emitting diode provides a polarized white light to decrease glare, and increase the extinction ratio. A LED chip is disposed in a cavity between a reflection substrate and a metallic wire-grid polarizing layer, and emits a first color light. The metallic wire-grid polarizing layer is disposed... Agent: National Taiwan University Of Science And Technology

20130015481 - Semiconductor light emitting device: According to one embodiment, in a semiconductor light emitting device, a substrate includes a first surface, a second surface opposite to the first surface, lateral surfaces intersected with the first surface and the second surface, first regions each provided on the lateral surface, and second regions each provided on the... Agent: Kabushiki Kaisha Toshiba

20130015483 - Semiconductor light emitting device: According to one embodiment, a semiconductor light emitting device includes a stacked body, a first electrode, a second electrode, a reflective layer, a first metal pillar, a second metal pillar, and a sealing unit. The stacked body includes first and second semiconductor layers, and a light emitting unit. The light... Agent: Kabushiki Kaisha Toshiba

20130015480 - Semiconductor light emmiting device: According to one embodiment, in a semiconductor light emitting device, a substrate has a first surface and a second surface to face to each other, and side surfaces each having a first region extending approximately vertically from the first surface toward the second surface side and a second region sloping... Agent: Kabushiki Kaisha Toshiba

20130015487 - Semiconductor light-emitting device: A semiconductor light-emitting device wherein each layer is formed of a Group III nitride-based compound semiconductor. The light-emitting device comprises a sapphire substrate having a plurality of stripe-patterned grooves 11 arranged in parallel to a first direction (x axis) on a surface of the substrate 10, a dielectric 15 discontinuously... Agent: Toyoda Gosei Co., Ltd.

20130015490 - Led and method for manufacturing the same: An LED includes a base, a pair of leads fixed on the base, a housing fixed on the leads, a chip mounted on one lead and an encapsulant sealing the chip. The housing defines a cavity in a central area thereof and a chamber adjacent to a circumferential periphery thereof.... Agent: Advanced Optoelectronic Technology, Inc.

20130015489 - Organic light emitting diode: An organic light emitting diode includes: a first electrode; a first hole transporting layer on the first electrode; a first emitting material layer on the first hole transporting layer, the first emitting material layer including a first host with a first dopant, wherein an energy level of a lowest unoccupied... Agent:

20130015491 - Organic light-emitting display apparatus and method of manufacturing the same: An organic light-emitting apparatus includes a substrate; a first electrode formed on the substrate, where the first electrode is a cathode, an electron injection layer formed to contact an upper surface of the first electrode and including Mg, an intermediate layer formed on the electron injection layer and including an... Agent: Samsung Mobile Display Co., Ltd.

20130015492 - Opto-electronic and electronic devices using an n-face or m-plane gallium nitride substrate prepared via ammonothermal growth: A method for growing III-V nitride films having an N-face or M-plane using an ammonothermal growth technique. The method comprises using an autoclave, heating the autoclave, and introducing ammonia into the autoclave to produce smooth N-face or M-plane Gallium Nitride films and bulk GaN.... Agent: The Regents Of The University Of California

20130015493 - Semiconductor apparatus and method for manufacturing semiconductor apparatus: A semiconductor apparatus includes a substrate having a device region and a peripheral region located around the device region. A first semiconductor region is formed within the device region, is of a first conductivity type, and is exposed at an upper surface of the substrate. Second-fourth semiconductor regions are formed... Agent: Toyota Jidosha Kabushiki Kaisha

20130015494 - Nanotube semiconductor devices and nanotube termination structures: A termination structure for a semiconductor device includes an array of termination cells formed using a thin epitaxial layer (nanotube) formed on sidewalls of dielectric-filled trenches. In other embodiments, semiconductor devices are formed using a thin epitaxial layer (nanotube) formed on sidewalls of dielectric-filled trenches.... Agent: Alpha & Omega Semiconductor, Inc.

20130015496 - Power semiconductor device: A power semiconductor device is provided in which reliability can be improved when the parallel number of semiconductor devices increases. When a bonding face on collector electrode is on an upper side, and a bonding face on emitter electrode is on a lower side, a collector electrode joint region as... Agent: Hitachi, Ltd.

20130015495 - Stacked half-bridge power module: According to an exemplary embodiment, a stacked half-bridge power module includes a high side device having a high side power terminal coupled to a high side substrate and a low side device having a low side power terminal coupled to a low side substrate. The high side and low side... Agent: International Rectifier Corporation

20130015497 - Source/drain region, contact hole and method for forming the same: An S/D region including a first region and a second region is provided. The first region is located, with at least a partial thickness, in the substrate. The second region is formed on the first region and made of a material different from that of the first region. A method... Agent:

20130015499 - Composite semiconductor device with a soi substrate having an integrated diode: There are disclosed herein various implementations of composite semiconductor devices. In one implementation, such a composite semiconductor device includes a semiconductor on insulator (SOI) substrate including a diode and an insulator layer. The composite semiconductor device also includes a transition body formed over the diode, and a transistor formed over... Agent: International Rectifier Corporation

20130015498 - Composite semiconductor device with integrated diode: There are disclosed herein various implementations of composite semiconductor devices. In one implementation, such a composite semiconductor device includes a transition body formed over a diode, the transition body including more than one semiconductor layer. The composite semiconductor device also includes a transistor formed over the transition body. The diode... Agent: International Rectifier Corporation (el Segundo, Ca)

20130015500 - Semiconductor device: According to one embodiment, a semiconductor device includes a semiconductor protrusion formed on a semiconductor substrate, a source/drain layer provided in a vertical direction of the semiconductor protrusion, a gate electrode provided on a side surface of the semiconductor protrusion through a gate insulating film, and a channel region provided... Agent: Kabushiki Kaisha Toshiba

20130015501 - Nested composite diode: There are disclosed herein various implementations of nested composite diodes. In one implementation, a nested composite diode includes a primary transistor coupled to a composite diode. The composite diode includes a low voltage (LV) diode cascoded with an intermediate transistor having a breakdown voltage greater than the LV diode and... Agent: International Rectifier Corporation

20130015503 - Monolithic integrated semiconductor structure: A monolithic integrated semiconductor structure includes: A) an Si carrier layer, B) a layer having the composition BxAlyGazNtPv, wherein x=0−0.1, y=0−1, z=0−1, t=0−0.1 and v=0.9−1, C) a relaxation layer having the composition BxAlyGazInuPvSbw, wherein x=0−0.1, y=0−1, z=0−1, u=0−1, v=0−1 and w=0−1, wherein w and/or u is on the side facing... Agent: Nasp Iii/v Gmbh

20130015502 - Structure and method for forming a light detecting diode and a light emitting diode on a silicon-on-insulator wafer backside: A structure and method for fabricating a light emitting diode and a light detecting diode on a silicon-on-insulator (SOI) wafer is provided. Specifically, the structure and method involves forming a light emitting diode and light detecting diode on the SOI wafer's backside and utilizing a deep trench formed in the... Agent: International Business Machines Corporation

20130015504 - Tsv structure and method for forming the same: A TSV structure includes a wafer including a first side and a second side, a through via connecting the first side and the second side, a through via dielectric layer covering the inner wall of the through via, a conductive layer which fills up the through via and consists of... Agent:

20130015505 - Methods and apparatus for measuring analytes using large scale fet arrays: Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and... Agent: Life Technologies Corporation

20130015506 - Methods and apparatus for measuring analytes using large scale fet arrays: Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and... Agent: Life Technologies Corporation

20130015507 - Multiple orientation nanowires with gate stack sensors: An electronic device includes a conductive channel defining a crystal structure and having a length and a thickness tC; and a dielectric film of thickness tg in contact with a surface of the channel. Further, the film comprises a material that exerts one of a compressive or a tensile force... Agent: International Business Machines Corporation

20130015508 - Semiconductor device and method for fabricating the same: A semiconductor device and a method for fabricating the same are described. The semiconductor device includes a well of a first conductive type, first doped regions of a second conductive type, gates of the second conductive type, second doped regions of the first conductive type, and isolation structures. The well... Agent: Winbond Electronics Corp.

20130015509 - Low resistance source and drain extensions for etsoi: A gate dielectric is patterned after formation of a first gate spacer by anisotropic etch of a conformal dielectric layer to minimize overetching into a semiconductor layer. In one embodiment, selective epitaxy is performed to sequentially form raised epitaxial semiconductor portions, a disposable gate spacer, and raised source and drain... Agent: International Business Machines Corporation

20130015512 - Low resistance source and drain extensions for etsoi: A gate dielectric is patterned after formation of a first gate spacer by anisotropic etch of a conformal dielectric layer to minimize overetching into a semiconductor layer. In one embodiment, selective epitaxy is performed to sequentially form raised epitaxial semiconductor portions, a disposable gate spacer, and raised source and drain... Agent: International Business Machines Corporation

20130015511 - Semiconductor device and manufacturing method of semiconductor device: According to one embodiment, a semiconductor device includes a fin-type semiconductor layer formed on a semiconductor substrate, a source layer connected to one end of the fin-type semiconductor layer, a drain layer connected to the other end of the fin-type semiconductor layer, and a gate electrode that includes a first... Agent: Kabushiki Kaisha Toshiba

20130015510 - Transistor, semiconductor device, and method for manufacturing the same: The invention provides a transistor, a semiconductor device and a method for manufacturing the same. The method for manufacturing a transistor comprises: defining an active area on a semiconductor substrate, forming a dummy gate stack on the active area, primary spacers surrounding said dummy gate stack, and an insulating layer... Agent:

20130015513 - Solid-state imaging device, solid-state imaging device manufacturing method, and electronic device: A solid-state imaging device includes: a first photodiode made up of a first first-electroconductive-type semiconductor region formed on a first principal face side of a semiconductor substrate, and a first second-electroconductive-type semiconductor region formed within the semiconductor substrate adjacent to the first first-electroconductive-type semiconductor region; a second photodiode made up... Agent: Sony Corporation

20130015514 - Single poly non-volatile memory cells: A non-volatile memory cell that includes a semiconductor substrate; a coupling capacitor located in a first active region of the semiconductor substrate; and at a shared second active region of the semiconductor substrate, a sense transistor and a tunnelling capacitor configured in parallel with the gate of the sense transistor.... Agent: Cambridge Silicon Radio Limited

20130015515 - Fet edram trench self-aligned to buried strap: A structure and method of making a field effect transistor (FET) embedded dynamic random access memory (eDRAM) cell array, which includes: a buried silicon strap extending into a buried oxide (BOX) layer of a silicon-on-insulator (SOI) substrate; a recessed trench capacitor extending down into the substrate layer of the SOI... Agent: International Business Machines Corporation

20130015516 - Asymmetrical non-volatile memory cell and method for fabricating the same: The asymmetrical non-volatile memory cell is provided on a substrate of first conductivity type and comprises a control region and a floating region, wherein the control region is adjacent to the floating region and isolated from the floating region. The control region further comprises an implant region, having second conductivity... Agent:

20130015517 - Semiconductor memory device having electrically floating body transistor, semiconductor memory device having both volatile and non-volatile functionality and method of operating: A semiconductor memory cell includes a floating body region configured to be charged to a level indicative of a state of the memory cell; a first region in electrical contact with said floating body region; a second region in electrical contact with said floating body region and spaced apart from... Agent:

20130015518 - Semiconductor memory device: In general, according to one embodiment, a semiconductor memory device includes active areas extending in a first direction, tunnel films provided on the active areas, floating gate electrodes provided on the tunnel films, an interelectrode insulating film provided on the floating gate electrodes and extending in a second direction, a... Agent: Kabushiki Kaisha Toshiba

20130015519 - Nonvolatile semiconductor memory device and method of manufacturing the same: According to one embodiment, a nonvolatile semiconductor memory device includes first to n-th semiconductor layers which are stacked in a first direction perpendicular to a surface of a semiconductor substrate and which extend in a second direction parallel to the surface of the semiconductor substrate, an electrode which extends in... Agent:

20130015520 - Nonvolatile semiconductor memory device and method of manufacturing the same: According to one embodiment, a nonvolatile semiconductor memory device includes a fin-type stacked layer structure in which a first insulating layer, a first semiconductor layer, . . . an n-th insulating layer, an n-th semiconductor layer, and an (n+1)-th insulating layer (n is a natural number equal to or more... Agent:

20130015521 - Cross-hair cell devices and methods for manufacturing the same: Systems and methods are disclosed for manufacturing grounded gate cross-hair cells and standard cross-hair cells of fin field-effect transistors (finFETs). In one embodiment, a process may include forming gate trenches and gates on and parallel to row trenches in a substrate, wherein the gate trenches and gates are pitch-doubled such... Agent: Micron Technology, Inc.

20130015522 - Semiconductor device: A semiconductor device includes an active region formed in a semiconductor substrate made of silicon, and surrounded by an isolation region; and a gate electrode formed on the active region and the isolation region with a gate insulating film interposed between the gate electrode and the active region or the... Agent: Panasonic Corporation

20130015523 - Fabrication of lateral double-diffused metal oxide semiconductor (ldmos) devices: Methods of making, structures, devices, and/or applications for lateral double-diffused metal oxide semiconductor (LDMOS) transistors are disclosed. In one embodiment, a method of fabricating an LDMOS transistor with source, drain, and gate regions on a substrate, can include: forming p-type and n-type buried layer (PBL, NBL) regions; growing an epitaxial... Agent: Silergy Technology

20130015524 - Semiconductor device having metal gate and manufacturing method thereof: A semiconductor device having a metal gate includes a substrate having a plurality of shallow trench isolations (STIs) formed therein, at least a metal gate positioned on the substrate, and at least a pair of auxiliary dummy structures respectively positioned at two sides of the metal gate and on the... Agent:

20130015525 - Cmos with dual raised source and drain for nmos and pmos: An apparatus and a method for creating a CMOS with a dual raised source and drain for NMOS and PMOS. The spacers on both stack gates are of equal thickness. In this method, a first insulating layer is formed on the surface. The first region is then masked while the... Agent: International Business Machines Corporation

20130015526 - Semiconductor device and method for manufacturing the same: The invention relates to a semiconductor device and a method for manufacturing such a semiconductor device. A semiconductor device according to an embodiment of the invention comprises: a substrate which comprises a base layer, an insulating layer on the base layer, and a semiconductor layer on the insulating layer; and... Agent:

20130015528 - Method and system for forming low contact resistance device: A method of treating a CMOS device. The method may include providing a first stress liner on a transistor of a first dopant type in the CMOS device. The method may further include exposing the CMOS device to first ions in a first exposure, the first ions configured to reduce... Agent: Varian Semiconductor Equipment Associates, Inc.

20130015527 - Method of forming metal silicide regions on a semiconductor device: The present disclosure is directed to various methods of forming metal silicide regions on an integrated circuit device. In one example, the method includes forming a PMOS transistor and an NMOS transistor, each of the transistors having a gate electrode and at least one source/drain region formed in a semiconducting... Agent: Globalfoundries Inc.

20130015529 - Semiconductor device structure and method for manufacturing the same: There are provided a semiconductor device structure and a method for manufacturing the same. The method comprises: forming at least one continuous gate line on a semiconductor substrate; forming a gate spacer surrounding the gate line; forming source/drain regions in the semiconductor substrate on both sides of the gate line;... Agent:

20130015530 - Method of forming polysilicon resistor during replacement metal gate process and semiconductor device having same: A method for manufacturing a semiconductor device, comprising forming a first gate stack portion on a substrate, the first gate stack portion including a first gate oxide layer and a first polysilicon layer on the first gate oxide layer, forming a second gate stack portion on the substrate, the second... Agent:

20130015531 - Method of forming polysilicon resistor during replacement metal gate process and semiconductor device having same: A method for manufacturing a semiconductor device, comprising forming a first gate stack portion on a surface of a substrate, the first gate stack portion including a first gate oxide layer and a first polysilicon layer on the first gate oxide layer, forming a second gate stack portion on the... Agent:

20130015532 - Methods of manufacturing gates for preventing shorts between the gates and self-aligned contacts and semiconductor devices having the same: A method for manufacturing a semiconductor device, comprising forming a metal gate of a transistor on a substrate by a replacement metal gate process, wherein an insulating layer is formed on the substrate adjacent the metal gate, forming a hard mask on the substrate including the insulating layer and the... Agent:

20130015533 - Epitaxial process for forming semiconductor devices: A method for forming a semiconductor device such as a MOSFET. The method includes forming gate electrode pillars on a silicon substrate via material deposition and etching. Following the etching step to define the pillars, an epitaxial silicon film is grown on the substrate between the pillars prior to forming... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20130015534 - Three dimensional fet devices having different device widths: A three dimensional FET device structure which includes a plurality of three dimensional FET devices. Each of the three dimensional FET devices include an insulating base, a three dimensional fin oriented perpendicular to the insulating base, a gate dielectric wrapped around the three dimensional fin and a gate wrapped around... Agent: International Business Machines Corporation

20130015535 - Configuration and fabrication of semiconductor structure having asymmetric field-effect transistor with tailored pocket portion along source/drain zone: An asymmetric insulated-gate field effect transistor (100U or 102U) provided along an upper surface of a semiconductor body contains first and second source/drain zones (240 and 242 or 280 and 282) laterally separated by a channel zone (244 or 284) of the transistor's body material. A gate electrode (262 or... Agent:

20130015536 - Mems with single use valve and method of operation: In one embodiment, a method of opening a passageway to a cavity includes providing a donor portion, forming a heating element adjacent to the donor portion, forming a first sacrificial slab abutting the donor portion, wherein the donor portion and the sacrificial slab are a shrinkable pair, forming a first... Agent: Robert Bosch Gmbh

20130015537 - Piezoresistive pressure sensor and process for producing a piezoresistive pressure sensor: A pressure sensor (1) is provided which has a piezoresistive membrane (2) which can be deformed by the action of the pressure of a medium. The membrane (2) is arranged on a carrier substrate (3) and extends over an opening (32) in the carrier substrate (3). The pressure sensor (1)... Agent: Epcos Ag

20130015543 - Magnetic memory cell construction: A magnetic tunnel junction cell having a free layer, a ferromagnetic pinned layer, and a barrier layer therebetween. The free layer has a central ferromagnetic portion and a stabilizing portion radially proximate the central ferromagnetic portion. The construction can be used for both in-plane magnetic memory cells where the magnetization... Agent: Seagate Technology LLC

20130015539 - Magnetic memory device having increased margin in thickness of magnetic layers: A magnetic memory device capable of ensuring a constant TMR difference even when the margin in a thickness of a magnetic layer constituting a KO is small is provided. The magnetic memory device includes a first magnetic layer having a fixed magnetization direction, a magnetization fixing layer formed on the... Agent:

20130015540 - Magnetic tunnel junction device and method for fabricating the same: A magnetic tunnel junction device includes a first electrode having a curved top surface, a magnetic tunnel junction layer formed along the top surface of the first electrode, and a second electrode formed on the magnetic tunnel junction layer.... Agent:

20130015542 - Magneto-electronic devices and methods of production: A magneto-electronic device includes a first electrode, a second electrode spaced apart from the first electrode, and an electric-field-controllable magnetic tunnel junction arranged between the first electrode and the second electrode. The electric-field-controllable magnetic tunnel junction includes a first ferromagnetic layer, an insulating layer formed on the first ferromagnetic layer,... Agent: The Johns Hopkins University

20130015538 - Magnetoresistive random access memory and method of making the same: A magnetoresistive random access memory (MRAM) cell includes a magnetic tunnel junction (MTJ), a top electrode disposed over the MTJ, a bottom electrode disposed below the MTJ, and an induction line disposed to one side of the MTJ. The induction line is configured to induce a perpendicular magnetic field at... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130015541 - Semiconductor storage device and manufacturing method thereof: A memory includes a semiconductor substrate. Cell transistors are on the substrate. Contact plugs each of which is buried between the adjacent cell transistors and electrically connected to a diffusion layer between the adjacent cell transistors. An interlayer dielectric film buries gaps between the contact plugs. A storage element is... Agent: Kabushiki Kaisha Toshiba

20130015544 - Semiconductor package and method of manufacturing the same: There is provided a semiconductor package including: a substrate including a semiconductor chip mounted thereon; a protective layer covering the semiconductor chip; a metal pattern mounted on the protective layer; and a first connective member connecting the semiconductor chip and the metal pattern.... Agent: Samsung Electro-mechanics Co., Ltd.

20130015546 - Multi-layer photoelectric integrated circuit device with overlapping devices: An integrated circuit device includes a plurality of device layers disposed on a substrate. A first one of the device layers includes at least one photo device and/or at least one electronic device and a second one of the device layers includes at least one photo device overlying the at... Agent: Samsung Electronics Co., Ltd.

20130015545 - Solid-state imaging device, manufacturing method of solid-state imaging device and electronic apparatus: A solid-state imaging device includes: a substrate on which plural pixels having photoelectric converters are formed; an inorganic microlens made of an inorganic material and formed above the substrate, and an organic microlens made of an organic material and formed adjacent to the inorganic microlens so that a hem portion... Agent: Sony Corporation

20130015547 - Photoelectric conversion device, method for manufacturing the same, photo sensor and imaging device: Provided are a photoelectric conversion device capable of controlling an absorbance of the red region at a wavelength of 600 nm or more, and an imaging device having an improved color reproduction by using the photoelectric device. Provided are a photoelectric conversion device that includes a pair of electrodes, and... Agent: Fujifilm Corporation

20130015548 - Integrated circuit with temperature increasing element and electronic system having the same: To provide an integrated circuit with functionality under environment with temperature lower than a working condition, the integrated circuit is designed to include a heating element incorporated with signal pins on a carrier, such as a lead frame, that supports a chip die and controlled by a heating control unit... Agent:

20130015549 - Integrated thermoelectric generator: An integrated thermoelectric generator includes a semiconductor. A set of thermocouples are electrically connected in series and thermally connected in parallel. The set of thermocouples include parallel semiconductor regions. Each semiconductor region has one type of conductivity from among two opposite types of conductivity. The semiconductor regions are electrically connected... Agent: Stmicroelectronics (rousset) Sas

20130015550 - Junction barrier schottky diode with enforced upper contact structure and method for robust packaging: A semiconductor junction barrier Schottky (JBS-SKY) diode with enforced upper contact structure (EUCS) is disclosed. Referencing an X-Y-Z coordinate, the JBS-SKY diode has semiconductor substrate (SCST) parallel to X-Y plane. Active device zone (ACDZ) atop SCST and having a JBS-SKY diode with Z-direction current flow. Peripheral guarding zone (PRGZ) atop... Agent:

20130015551 - Method for fabricating memory device with buried digit lines and buried word lines: A method for fabricating a memory array includes providing a semiconductor substrate having thereon a plurality of line-shaped active areas and intermittent line-shaped trench isolation regions between the plurality of line-shaped active areas, which extend along a first direction; forming buried word lines extending along a second direction in the... Agent:

20130015552 - Electrical isolation of high defect density regions in a semiconductor device: Embodiments of the invention include a III-nitride semiconductor layer including a first portion having a first defect density and a second portion having a second defect density. The first defect density is greater than the second defect density. An insulating material is disposed over the first portion. The insulating material... Agent: Epowersoft, Inc.

20130015553 - High voltage isolation trench, its fabrication method and mos device: A type of high voltage isolation trench, its fabrication method and an MOS device are disclosed. The isolation trench includes a trench extending to a buried oxide layer of a wafer, with high concentration N+ injected to a side wall of the trench, polysilicon being filled in the trench and... Agent: North China University Of Technology

20130015555 - Method of forming an inductor on a semiconductor wafer: A semiconductor device has a substrate with an inductor formed on its surface. First and second contact pads are formed on the substrate. A passivation layer is formed over the substrate and first and second contact pads. A protective layer is formed over the passivation layer. The protective layer is... Agent: Stats Chippac, Ltd.

20130015554 - Semiconductor device and method for forming passive circuit elements with through silicon vias to backside interconnect structures: A semiconductor wafer contains a substrate having a plurality of active devices formed thereon. An analog circuit is formed on the substrate. The analog circuit can be an inductor, metal-insulator-metal capacitor, or resistor. The inductor is made with copper. A through substrate via (TSV) is formed in the substrate. A... Agent: Stats Chippac, Ltd.

20130015558 - Semiconductor device: A semiconductor device has at least a first capacitor and a second capacitor. First electrodes of the first and second capacitors are connected in common, a first voltage (½ VPERI) is applied to the first electrodes, a second voltage (for example, VPERI) that is different from the first voltage is... Agent: Elpida Memory, Inc.

20130015559 - Semiconductor devices and methods of manufacturing the same: A semiconductor device includes a plurality of lower electrodes on a substrate, with each of the lower electrodes extending in a height direction from the substrate and including sidewalls, the lower electrodes being spaced apart from each other in a first direction and in a second direction, a plurality of... Agent:

20130015557 - Semiconductor package including an external circuit element: Circuit elements such as DC blocking capacitors used in communication such as a serial communication link between two or more electrical components are disposed in pre-existing openings in a support structure that supports at least one of the two electrical components. The openings may be plated and used for signal... Agent:

20130015556 - Suspended beam for use in mems device: A suspended beam includes a substrate, a main body and a first metal line structure. A first end of the main body is fixed onto the substrate. A second end of the main body is suspended. The first metal line structure is embedded in the main body. The width of... Agent: United Microelectronics Corp.

20130015560 - Growth of bulk group-iii nitride crystals after coating them with a group-iii metal and an alkali metal: A method of producing a Group-III nitride crystal by coating at least one surface of the seed with a thin wetting layer or film comprised of one or more Group-III and alkali metals.... Agent: The Regents Of The University Of California

20130015561 - Mechanisms for marking the orientation of a sawed die: Mechanisms for identifying orientation of a sawed die are provided. By making metal pattern in the corner stress relief region in one corner of the die different from the other corners, users can easily identify the orientation of the die.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130015562 - Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern using the composition: Provided is an actinic-ray- or radiation-sensitive resin composition including (A) a resin that when acted on by an acid, is decomposed to thereby increase its solubility in an alkali developer, (B) an onium salt containing a nitrogen atom in its cation moiety, which onium salt when exposed to actinic rays... Agent: Fujifilm Corporation

20130015563 - Semiconductor package: There is provided a semiconductor package, and more particularly, a semiconductor package including an antenna embedded in an inner portion thereof. The semiconductor package includes: a semiconductor chip; a main antenna disposed to be adjacent to the semiconductor chip and electrically connected thereto; a sealing part sealing both of the... Agent: Samsung Electro-mechanics Co., Ltd.

20130015564 - Semiconductor device and method of manufacturing same: A semiconductor device (semiconductor module) includes a circuit board (module board) and a semiconductor element mounted on the circuit board. A shielding layer that blocks electromagnetic waves is disposed on the upper surface of the semiconductor element, and an antenna element is disposed over the shielding layer. The semiconductor element... Agent: Fujitsu Semiconductor Limited

20130015565 - Substrate structure, semiconductor device array and semiconductor device having the same: A substrate structure has a first surface and a second surface. A plurality of carrying members are formed on the first surface and a plurality of conductive traces are formed on the second surface. In addition, the substrate structure has a first, a second and a third thermal stress relief... Agent: Silitek Electronic (guangzhou) Co., Ltd.

20130015566 - Apparatus and methods for quad flat no lead packaging: A method for fabricating a semiconductor package is disclosed that includes providing a supply of lead elements, mounting a plurality of the lead elements on a lead frame until a predetermined number of lead elements are placed on the lead frame, and connecting other components on the lead frame to... Agent:

20130015567 - Semiconductor device and production method for same: A semiconductor device of the present invention comprises: an outer package; a first lead frame including a first relay lead, a first die pad with a power element mounted thereon, and a first external connection lead which has an end protruding from the outer package; and a second lead frame... Agent: Panasonic Corporation

20130015568 - Getter structure with optimized pumping capacity: Getter structure comprising at least one getter portion arranged on a support and including at least two adjacent getter material parts arranged on the support one beside the other, with different thicknesses and of which the surface grain densities are different from one another.... Agent: Commissariat A I'energie Atomique Et Aux Ene Alt

20130015573 - Ball grid array with improved single-ended and differential signal performance: An improved system and method for assigning power and ground pins and single ended or differential signal pairs for a ball grid array semiconductor package. In certain embodiments, the system uses a hexagonal pattern where the grid may be represented by a multiplicity of nested hexagonal patterns.... Agent: International Business Machines Corporation

20130015574 - Bump i/o contact for semiconductor device: A bump contact electrically connects a conductor on a substrate and a contact pad on a semiconductor device mounted to the substrate. The first end of an electrically conductive pillar effects electrical contact and mechanical attachment of the pillar to the contact pad with the pillar projecting outwardly from the... Agent: Maxim Integrated Products, Inc.

20130015572 - Electronic assembly including an embedded electronic component: An electronic unit is produced including at least one electronic component at least partially embedded in an insulating material. A film assembly is provided with at least one conductive layer and a carrier layer. The conductive layer includes openings in the form of holes for receiving bumps, which are connected... Agent: Fraunhofer-gesellschaft Zur Forderung Der Angewandten Forschung E.v.

20130015577 - Semiconductor device and method of forming base substrate with cavities formed through etch-resistant conductive layer for bump locking: A semiconductor device has a base substrate with first and second etch-resistant conductive layers formed over opposing surfaces of the base substrate. First cavities are etched in the base substrate through an opening in the first conductive layer. The first cavities have a width greater than a width of the... Agent: Stats Chippac, Ltd.

20130015569 - Semiconductor device and method of forming substrate with seated plane for mating with bumped semiconductor die: A semiconductor device has a first insulating layer formed over a substrate. The substrate has a plurality of conductive layers and plurality of second insulating layers formed between the conductive layers. The substrate can be a PCB or interposer. A plurality of openings is formed in the first insulating layer... Agent: Great Wall Semiconductor Corporation

20130015575 - Semiconductor device with solder bump formed on high topography plated cu pads: A semiconductor device has a first conductive layer formed over a substrate. A first insulating layer is formed over the substrate and first conductive layer. A second conductive layer is formed over the first conductive layer and first insulating layer. A second insulating layer is formed over the first insulating... Agent: Stats Chippac, Ltd.

20130015571 - Semiconductor package and method of manufacturing the same: A semiconductor package and a method of manufacturing the same. The semiconductor package includes; a printed circuit board (PCB); a first semiconductor chip attached onto the PCB; an interposer that is attached onto the first semiconductor chip to cover a portion of the first semiconductor chip and comprises first connection... Agent:

20130015576 - Solder bump with inner core pillar in semiconductor package: A flip chip semiconductor package has a substrate with a plurality of active devices. A contact pad is formed on the substrate in electrical contact with the plurality of active devices. A passivation layer, second barrier layer, and adhesion layer are formed between the substrate and an intermediate conductive layer.... Agent: Stats Chippac, Ltd.

20130015570 - Stacked semiconductor package and manufacturing method thereof: In an embodiment, a stacked semiconductor package includes a wiring board having external connection terminals and internal connection terminals, and first and second modules stacked on the wiring board. Each of the first and second modules includes a plurality of semiconductor chips mounted on an interposer and a sealing resin... Agent: Kabushiki Kaisha Toshiba

20130015578 - Interconnection and assembly of three-dimensional chip packages: In a chip package, semiconductor dies in a vertical stack of semiconductor dies or chips (which is referred to as a ‘plank stack’) are aligned by positive features that are mechanically coupled to negative features recessed below the surfaces of adjacent semiconductor dies. Moreover, the chip package includes an interposer... Agent: Oracle International Corporation

20130015579 - Solder ball contact susceptible to lower stress: A solder ball contact and a method of making a solder ball contact includes: a first insulating layer with a via formed on an integrated circuit (IC) chip and a metal pad; an under bump metallurgy (UBM) structure disposed within the via and on a portion of the first insulating... Agent: International Business Machines Corporation

20130015580 - Replacement metal gate structure and methods of manufacture: A replacement metal gate structure and methods of manufacturing the same is provided. The method includes forming at least one trench structure and forming a liner of high-k dielectric material in the at least one trench structure. The method further includes adjusting a height of the liner of high-k dielectric... Agent: International Business Machines Corporation

20130015581 - Structure and method for high performance interconnect: The present disclosure provides an integrated circuit structure. The integrated circuit structure includes a substrate having an IC device formed therein; a first dielectric material layer disposed on the substrate and having a first trench formed therein; and a first composite interconnect feature disposed in the first trench and electrically... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130015582 - Circuit board, semiconductor device, process for manufacturing circuit board and process for manufacturing semiconductor device: A circuit board (1) exhibits an average coefficient of thermal expansion (A) of the first insulating layer (21) in the direction along the substrate surface in a temperature range from 25 degrees C. to its glass transition point of equal to or higher than 3 ppm/degrees C. and equal to... Agent: Sumitomo Bakelite Co., Ltd.

20130015583 - Chip comprising an integrated circuit, fabrication method and method for locally rendering a carbonic layer conductive: A chip includes an integrated circuit and a carbonic layer. The carbonic layer includes a graphite-like carbon, wherein a lateral conducting path through the graphite-like carbon electrically connects two circuit elements of the integrated circuit.... Agent: Infineon Technologies Ag

20130015584 - Optoelectronic semiconductor device: An optoelectronic semiconductor device includes a substrate, a semiconductor system having an active layer formed on the substrate and an electrode structure formed on the semiconductor system, wherein the layout of the electrode structure having at least a first conductivity type contact zone or a first conductivity type bonding pad,... Agent: Epistar Corporation

20130015586 - De-skewed multi-die packages: A microelectronic package may have a plurality of terminals disposed at a face thereof which are configured for connection to at least one external component. e.g., a circuit panel. First and second microelectronic elements can be affixed with packaging structure therein. A first electrical connection can extend from a respective... Agent: Tessera, Inc.

20130015587 - Semiconductor device and test method: A semiconductor device includes a semiconductor substrate including an element region, an inner sealing and an outer sealing which are formed on the element region and have a first opening part and a second opening part, respectively, a multilayer interconnection structure which is formed on the substrate and stacks multiple... Agent: Fujitsu Semiconductor Limited

20130015588 - Semiconductor device having through electrode and method of fabricating the same: A semiconductor device includes a substrate, and a through electrode passing through the substrate. The semiconductor device has a pad region and a through electrode region. A pad covers the pad region, extends into the through electrode region, and delimits an opening in the through electrode region. A through electrode... Agent: Samsung Electronics Co., Ltd.

20130015585 - Structures with through vias passing through a substrate comprising a planar insulating layer between semiconductor layers: A through via contains a conductor (244, 262) passing through a substrate (140). The substrate can be SOI or some other substrate containing two semiconductor layers (140.1, 140.2) on opposite sides of an insulating layer (140B). The through via includes two constituent vias (144.1, 144.2) formed from respective different sides... Agent:

20130015589 - Chip-on-package structure for multiple die stacks: A multi-die semiconductor device is disclosed. The device may include one or more first-sized die on a substrate and one or more second-sized die affixed over the one or more first-sized die. The second-sized die may have a larger footprint than the first-sized die. An internal molding compound may be... Agent:

20130015590 - Memory module in a package: A microelectronic package can include a substrate having first and second opposed surfaces, at least two pairs of microelectronic elements, and a plurality of terminals exposed at the second surface. Each pair of microelectronic elements can include an upper microelectronic element and a lower microelectronic element. The pairs of microelectronic... Agent: Invensas Corporation

20130015591 - Memory module in a package: A microelectronic package can include a substrate having first and second opposed surfaces, first, second, third, and fourth microelectronic elements, and a plurality of terminals exposed at the second surface. Each microelectronic element can have a front surface facing the first surface of the substrate and a plurality of contacts... Agent: Invensas Corporation

20130015592 - Bond pad configurations for semiconductor dies: A semiconductor device is provided and includes a semiconductor die, and a plurality of bond pads having exposed surfaces arranged in an alternating interleaved pattern on the semiconductor die. Each of the surfaces of the bond pads have a first bond placement area that overlaps with a second bond placement... Agent: Intersil Americas Inc.

20130009122 - Non-volatile memory device having variable resistance element and method of fabricating the same: A non-volatile memory device includes a lower molding layer, a horizontal interconnection line on the lower molding layer, an upper molding layer on the horizontal interconnection line, pillars extending vertically through the upper molding layer, the horizontal interconnection line, and the lower molding layer, and a buffer layer interposed between... Agent: Samsung Electronics Co., Ltd.

20130009123 - Variable resistance element, semiconductor device including variable resistance element, and methods for manufacturing variable resistance element and semiconductor device: A variable resistance element includes a first electrode, a second electrode and an ion conduction layer interposed between the first and second electrodes. The ion conduction layer contains an organic oxide containing at least oxygen and carbon. The carbon concentration distribution in the ion conduction layer is such that the... Agent: Nec Corporation

20130009125 - Low resistance semiconductor device: A semiconductor device includes an insulation layer including a cell contact hole, and a switching device in the cell contact hole, at least a part of a top surface of the switching device being inclined with respect to an axial direction of the cell contact hole.... Agent:

20130009126 - Programmable metallization cells and methods of forming the same: A programmable metallization cell (PMC) that includes an active electrode; a nanoporous layer disposed on the active electrode, the nanoporous layer comprising a plurality of nanopores and a dielectric material; and an inert electrode disposed on the nanoporous layer. Other embodiments include forming the active electrode from silver iodide, copper... Agent: Seagate Technology LLC

20130009127 - Resistive memory and methods of processing resistive memory: Resistive memory and methods of processing resistive memory are described herein. One or more method embodiments of processing resistive memory include forming a resistive memory cell material on an electrode having an access device contact, and forming a heater electrode on the resistive memory cell material after forming the resistive... Agent: Micron Technology, Inc.

20130009124 - Resistive ram having the function of diode rectification: A type of resistance random access memory structure having the function of diode rectification includes a first electrode, a second electrode and a resistance conversion layer. The resistance conversion layer is disposed between the first electrode and the second electrode; and it includes a first oxidized insulating layer which is... Agent:

20130009128 - Nanoscale switching device: A nanoscale switching device has an active region containing a switching material. The switching device has a first electrode and a second electrode with nanoscale widths, and the active region is disposed between the first and second electrodes. A protective cladding layer surrounds the active region. The protective cladding layer... Agent:

20130009129 - Quantum dot optical devices with enhanced gain and sensitivity and methods of making same: Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one... Agent:

20130009131 - Device including quantum dots: A device including an emissive material comprising quantum dots is disclosed. In one embodiment, the device includes a first electrode and a second electrode, a layer comprising quantum dots disposed between the first electrode and the second electrodes, and a first interfacial layer disposed at the interface between a surface... Agent:

20130009130 - Laterally contacted blue led with superlattice current spreading layer: A laterally contacted blue LED device involves a PAN structure disposed over an insulating substrate. The substrate may be a sapphire substrate that has a template layer of GaN grown on it. The PAN structure includes an n-type GaN layer, a light-emitting active layer involving indium, and a p-type GaN... Agent: Bridgelux, Inc.

20130009132 - Low thermal conductivity material: Embodiments of a material having low cross-plane thermal conductivity are provided. Preferably, the material is a thermoelectric material. In general, the thermoelectric material is designed to block phonons, which reduces or eliminates heat transport due to lattice vibrations and thus cross-plane thermal conductivity. By reducing the thermal conductivity of the... Agent: The Board Of Regents Of The University Of Oklahoma

20130009133 - A graphene transistor with a self-aligned gate: A transistor structure is provided which includes a graphene layer located on an insulating layer, a first metal portion overlying a portion of the graphene layer, a second metal portion contacting and overhanging the first metal portion, a first electrode contacting a portion of the graphene layer and laterally offset... Agent: International Business Machines Corporation

20130009142 - Charge transport compositions and electronic devices made with such compositions: The present invention relates to charge transport compositions. The invention further relates to electronic devices in which there is at least one active layer comprising such charge transport compositions.... Agent: E I Du Pont De Nemours And Company

20130009138 - Composite material, light-emitting element, light-emitting device, electronic device, lighting device, and organic compound: A composite material including an organic compound and an inorganic compound, which has a high carrier-transport property; a composite material having an excellent property of carrier injection to an organic compound; a composite material in which light absorption due to charge transfer interaction is unlikely to occur; and a composite... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130009135 - Electronic device and method of manufacturing semiconductor device: There is provided an electronic device including at least a first electrode, a second electrode disposed to be spaced apart from the first electrode, and an active layer disposed over the second electrode from above the first electrode and formed of an organic semiconductor material. A charge injection layer is... Agent: Sony Corporation

20130009141 - Light-emitting element, light-emitting device, and electronic device: A light-emitting element with improved emission efficiency is provided. The light-emitting element includes a light-emitting layer in which a first light-emitting layer and a second light-emitting layer are stacked in contact with each other over an anode, and a first substance serving as an emission center substance in the second... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130009139 - Light-emitting element, light-emitting device, display device, lighting device, and electonic device: A light-emitting element is disclosed where a host material and a hole-transport material each consist of a carbazole skeleton and another skeleton other than the carbazole skeleton. Both the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) of the hole-transport material are distributed over the carbazole... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130009140 - Light-emitting element, lighting device, light-emitting device, and electronic device: A light-emitting element whose degree of deterioration with driving time is improved and of which emission colors are easily controlled. A light-emitting emitting element having a first electrode, a second electrode, and a layer containing an organic compound located between the first electrode and the second electrode, in which the... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130009134 - Organic el device and method for manufacturing the same: Provided is an organic EL device comprising: an organic EL element including an anode 114, an organic EL layer 116, and a cathode 117; a wiring layer 106 that supplies power to the anode 114; and an organic layer 111 interposed between the anode 114 and the wiring layer 106,... Agent: Panasonic Corporation

20130009136 - Triphenylene-based compounds and organic electroluminescent device comprising same: o

20130009137 - Vertically phase-separating semiconducting organic material layers: Improved OLED devices and methods of making the same using vertical phase separation to simplify processing. Vertically phase separated material can include at least one lower first layer disposed on the electrode, and at least one upper second layer different from the first layer and disposed away from the electrode... Agent: Plextronics, Inc.

20130009152 - Light-emitting device with heterophase boundaries: The invention relates to light-emitting devices (200); in particular, to high effective light-emitting diodes on the base of nitrides of III group elements of the periodic system. The proposed light-emitting device comprises a substrate, a buffer layer (120) formed on the substrate, a first layer (130) from n-type semiconductor formed... Agent:

20130009147 - Method for manufacturing oxide semiconductor film, method for manufacturing semiconductor device, and semiconductor device: In an oxide semiconductor film formed over an insulating surface, an amorphous region remains in the vicinity of the interface with the base, which is thought to cause a variation in the characteristics of a transistor and the like. A base surface or film touching the oxide semiconductor film is... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130009143 - Photo sensor and method of fabricating the same: A photo sensor and a method of fabricating the same are disclosed, the photo sensor of the present invention has ultra-high Schottky junction area per unit volume, and the photo sensor comprises: a first conductive layer; plural metallic nanowires, in which one end of each metallic nanowire connects with the... Agent:

20130009146 - Semiconductor device: A semiconductor device which is downsized while a short-channel effect is suppressed and whose power consumption is reduced is provided. A downsized SRAM circuit is formed, which includes a first inverter including a first transistor and a second transistor overlapping with each other; a second inverter including a third transistor... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130009148 - Semiconductor device: Stable electrical characteristics and high reliability are provided for a semiconductor device including an oxide semiconductor. In a transistor including an oxide semiconductor layer, a buffer layer containing a constituent similar to that of the oxide semiconductor layer is provided in contact with a top surface and a bottom surface... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130009149 - Semiconductor device and manufacturing method thereof: An object of an embodiment of the present invention is to provide a semiconductor device which includes a transistor including an oxide semiconductor with high field-effect mobility, a small variation in threshold voltage, and high reliability. The semiconductor device includes a transistor which includes an insulating substrate from which oxygen... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130009150 - Semiconductor device, electronic device, wiring substrate, manufacturing method of semiconductor device, and manufacturing method of wiring substrate: A first wiring 232 is disposed over one surface of a core layer 200. A semiconductor layer 236 is formed over the first wiring 232 and over one surface of the core layer 200 located around the first wiring 232. The first wiring 232 and the semiconductor layer 236 form... Agent: Renesas Electronics Corporation

20130009151 - Thin film transistor array substrate and method of manufacturing the same: A TFT array substrate includes a semiconductive oxide layer disposed on an insulating substrate and including a channel portion, a gate electrode overlapping the semiconductive oxide layer, a gate insulating layer interposed between the semiconductive oxide layer and the gate electrode, and a passivation layer disposed on the semiconductive oxide... Agent: Samsung Electronics Co., Ltd.

20130009144 - Top-gate transistor array substrate: A top-gate transistor array substrate includes a transparent substrate with a plane, an ion release layer, a pixel array, and a first insulating layer. The ion release layer is disposed on the transparent substrate and completely covers the plane. The pixel array is disposed on the ion release layer and... Agent:

20130009145 - Transistor, electronic device including transistor, and manufacturing methods thereof: A transistor may include an active layer having a plurality of oxide semiconductor layers and an insulating layer disposed therebetween. The insulating layer may include a material that has higher etch selectivity with respect to at least one of the plurality of oxide semiconductor layers. The electronic device may include... Agent: Samsung Electronics Co., Ltd.

20130009153 - Semiconductor device with buried bit line and method for fabricating the same: A semiconductor device includes an active body having two sidewalls facing each other in a lateral direction, a junction formed in a sidewall of the two sidewalls, a dielectric layer having an open portion to expose the junction and covering the active body, a junction extension portion having a buried... Agent:

20130009160 - Active matrix substrate: Disposed on an insulating substrate (10a) are a plurality of TFTs arranged in a matrix, each including a drain electrode (18b) in which a first conductive layer (16b) and a second conductive layer (17bb) are laminated in this order; an interlayer insulating film (21) deposited on each of the TFTs,... Agent: Sharp Kabushiki Kaisha

20130009154 - Array substrate for organic electroluminescent display device and method of fabricating the same: An array substrate for an organic electroluminescent display device includes a substrate including a display area and a non-display area; a gate line and a data line; a thin film transistor including a semiconductor layer of polycrystalline silicon, a gate insulating layer, a gate electrode, an inter insulating layer, a... Agent:

20130009159 - Liquid crystal display and thin film transistor array panel usable with the liquid crystal display: A liquid crystal display with improved viewing angle and uncompromised transmittance is provided, along with a thin film transistor (TFT) array panel usable for such liquid crystal display. The TFT array panel includes a substrate, a plurality of gate lines formed on the substrate, a plurality of data lines formed... Agent: Samsung Electronics Co., Ltd.

20130009158 - Pixel structure: A pixel structure disposed on a substrate having an array of pixel areas is provided. The common electrode wire is positioned only in a portion of the pixel area. A first capacitance storage electrode is disposed in each of the pixel areas and electrically connected between two adjacent common electrode... Agent: Chunghwa Picture Tubes, Ltd.

20130009157 - Thin film transistor array panel and a method for manufacturing the same: A thin film transistor array panel includes a substrate; a plurality of gate lines that are formed on the substrate; a plurality of data lines that intersect the gate lines; a plurality of thin film transistors that are connected to the gate lines and the data lines; a plurality of... Agent:

20130009156 - Thin film transistor array substrate and liquid crystal display panel having the same: A TFT array is disclosed that includes a substrate, a gate line, a data line and a pixel, wherein the pixel comprises a first pixel electrode portion comprising a plurality of spaced apart first electrode lines, the first pixel electrode portion having an associated TFT coupled to the first electrode... Agent:

20130009155 - Thin-film-transistor array substrate and manufacturing method thereof: The present invention discloses a thin-film-transistor array substrate and a manufacturing method thereof. The array substrate includes a thin-film transistor and a compensation electrode. A gate electrode of the thin-film transistor is a portion of a scan-signal line and has an opening, and the opening extends to a side of... Agent: Shenzhen China Star Optoelectronics Technology Co.

20130009161 - Semiconductor device and method of manufacturing the same, and method of manufacturing image display device: There is provided a method of manufacturing a semiconductor device including: forming a gate electrode on a substrate ; forming a gate insulating layer of which a recessed portion is formed in a region in which a channel formation region is to be formed, on the substrate and the gate... Agent: Sony Corporation

20130009162 - Organic light-emitting display device: An organic light-emitting display device may include a substrate; a plurality of thin film transistors (TFTs) on the substrate; a plurality of first electrodes respectively on the TFTs; a pixel-defining layer between the first electrodes, the pixel-defining layer including a covered portion and an uncovered portion; a plurality of organic... Agent:

20130009163 - Semiconductor device, active matrix substrate, and display device: A semiconductor device that includes a substrate 37, a non-volatile memory (memory cell) 21 having a memory cell transistor (switching element) 33 and a floating gate electrode (memory storage part) 36, and a passivation insulating film (insulating layer) 40 and an organic polymer film (insulating layer) 41 both provided above... Agent: Sharp Kabushiki Kaisha

20130009165 - Nitride semiconductor device, method for manufacturing the same and nitride semiconductor power device: Disclosed herein are a nitride semiconductor device, a method for manufacturing the same, and a nitride semiconductor power device. According to an exemplary embodiment of the present invention, a nitride semiconductor device includes: a nitride semiconductor layer over a substrate wherein the nitride semiconductor layer has a two-dimensional electron gas... Agent: Samsung Electro-mechanics Co., Ltd.

20130009164 - Power device and method for manufacturing the same: Provided is a power device. The power device may include a two-dimensional electron gas (2-DEG) layer in a portion corresponding to a gate electrode pattern since a second nitride layer is further formed on a lower portion of the gate electrode pattern after a first nitride layer is formed and... Agent:

20130009166 - Semiconductor device: One embodiment of a semiconductor device according to the present invention includes a substrate, a base compound semiconductor layer layered on the substrate to form a base, a channel defining compound semiconductor layer layered on the base compound semiconductor layer to define a channel, and an impact ionization control layer... Agent:

20130009170 - Epitaxial sic single crystal substrate and method of manufacture of epitaxial sic single crystal substrate: An epitaxial SiC single crystal substrate including a SiC single crystal wafer whose main surface is a c-plane or a surface that inclines a c-plane with an angle of inclination that is more than 0 degree but less than 10 degrees, and SiC epitaxial film that is formed on the... Agent: National Institute Of Advance Industrial Science And Technology

20130009167 - Light emitting diode with patterned structures and method of making the same: A light emitting diode is provided which includes an active region in combination with a current spreading layer; and a crystalline epitaxial film light extraction layer in contact with the current spreading layer, the light extraction layer being patterned with nano/micro structures which increase extraction of light emitted from the... Agent: Sharp Kabushiki Kaisha

20130009169 - Methods of making vertical junction field effect transistors and bipolar junction transistors without ion implantation and devices made therewith: Methods of making semiconductor devices such as vertical junction field effect transistors (VJFETs) or bipolar junction transistors (BJTs) are described. The methods do not require ion implantation. The VJFET device has an epitaxially regrown n-type channel layer and an epitaxially regrown p-type gate layer as well as an epitaxially grown... Agent: Ss Sc Ip, LLC

20130009171 - Semiconductor device and method for manufacturing same: A semiconductor device has a semiconductor layer and a substrate. The semiconductor layer constitutes at least a part of a current path, and is made of silicon carbide. The substrate has a first surface supporting the semiconductor layer, and a second surface opposite to the first surface. Further, the substrate... Agent: Sumitomo Electric Industries,. Ltd.

20130009168 - Semiconductor module: A semiconductor module is disclosed that includes a semiconductor element, a capacitor configured to be electrically connected to the semiconductor element and a heat sink, wherein the semiconductor and the capacitor are stacked with each other via the heat sink, and wherein the semiconductor element is disposed in a position... Agent: Toyota Jidosha Kabushiki Kaisha

20130009172 - Method of manufacture of light-emitting element and light-emitting element manufactured thereby: An object of the invention is to provide a method of manufacturing a light-emitting element, in which residue from a fixing resin layer is less likely to be left on a semiconductor layer and a supporting base in the case of manufacturing the light-emitting element by a laser lift-off technique.... Agent: Sumitomo Bakelite Co., Ltd.

20130009173 - Optical electronic package: An electronic package includes a substrate wafer having front and rear faces and a through passage having a front window and a blind cavity communicating laterally with the front window. A receiving integrated circuit chip is mounted on the rear face and includes an optical sensor situated opposite the blind... Agent: Stmicroelectronics (grenoble 2) Sas

20130009176 - Display substrate and method for manufacturing the same: A display substrate includes a base substrate, color filter layers, a bottom supporting layer and a light-blocking and maintaining element. The base substrate includes a gate line, a data line crossing the gate line, and a switching element on the base substrate. The color filter layers are adjacent to each... Agent: Samsung Electronics Co., Ltd.

20130009178 - Light emitting diode package and method for manufacturing the same: A light emitting diode package includes an electrically insulated base, first and second electrodes, an LED chip, a voltage stabilizing module, and an encapsulative layer. The base has a first surface and an opposite second surface. The first and second electrodes are formed on the first surface of the base.... Agent: Advanced Optoelectronic Technology, Inc.

20130009177 - Organic layer deposition apparatus and method of manufacturing organic light-emitting display device by using the same: An organic layer deposition apparatus, and a method of manufacturing an organic light-emitting display device using the organic layer deposition apparatus. The organic layer deposition apparatus includes: an electrostatic chuck that fixedly supports a substrate that is a deposition target; a deposition unit including a chamber maintained at a vacuum... Agent:

20130009174 - Vertical stacked light emitting structure: A vertical stacked light emitting structure includes a substrate unit, a first light emitting unit, a light guiding unit, and a second light emitting unit. The substrate unit includes at least one substrate body. The first light emitting unit includes at least one first LED bare chip disposed on the... Agent: Azurewave Technologies, Inc.

20130009175 - Vertical stacked light emitting structure: A vertical stacked light emitting structure includes a substrate unit, a stacked type light emitting module, and a flip-chip type light emitting module. The substrate unit includes a substrate body. The stacked type light emitting module includes a first light emitting unit and a light guiding unit. The first light... Agent: Azurewave Technologies, Inc.

20130009179 - Compact optically efficient solid state light source with integrated thermal management: A compact and efficient LED array lighting component comprising a circuit board with an array of LED chips mounted on it and electrically interconnected. A plurality of primary lenses is included, each of which is formed directly over each LED chip and/or a sub-group of the LED chips. A heat... Agent: Cree, Inc.

20130009181 - Display device: According to one embodiment, a display device includes a first substrate, a second substrate, a display layer, a seal unit, a protrusion and a spacing adjustment layer. The display layer is provided between the first substrate and the second substrate. The seal unit surrounds the display layer between the first... Agent: Japan Display Central Inc.

20130009180 - Mobile terminal: A mobile terminal including a wireless communication unit configured to wirelessly communicate with at least one other terminal; a display panel configured to display information; a plurality of light source parts spaced apart from each other and configured to output light; a light guide plate provided under the display panel... Agent:

20130009182 - Non-polar substrate having hetero-structure and method for manufacturing the same, and nitride-based light emitting device using the same: Disclosed are a non-polar hetero substrate, a method for manufacturing the same, and a nitride-based light emitting device using the same. The non-polar hetero substrate includes a non-polar base substrate, a nitride base layer disposed on the substrate, a defect reduction layer disposed on the nitride base layer, the defect... Agent:

20130009184 - Electro-optical device: An object of the present invention is to realize a numerical aperture higher than that of a pixel having a conventional construction by using a pixel circuit having a novel construction in an electro-optical device. Therefore, it is utilized that the electric potential of a gate signal line in a... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130009186 - Led lamps: A high power LED lamp has a GaN chip placed over an AlGaInP chip. A reflector is placed between the two chips. Each of the chips has trenches diverting light for output. The chip pair can be arranged to produce white light having a spectral distribution in the red to... Agent: Epistar Corporation

20130009185 - Light emitting device and electronic device: The invention provides a light emitting device which uses a color conversion layer, with high light emission efficiency and a low driving voltage. The light emitting device includes a light emitting element having a pair of electrodes and a layer containing an organic compound sandwiched between the pair of electrodes,... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130009190 - Light emitting device and method for manufacturing same: e

20130009188 - Light-emitting device having a patterned substrate and the method thereof: This disclosure provides a light-emitting device including a patterned substrate and the manufacturing method thereof. The patterned substrate has a plurality of depressions and/or extrusions for scattering light emitted from a light-emitting layer. Each of the plurality of depressions and/or extrusions comprises a top portion, a bottom portion, and a... Agent:

20130009189 - Lighting using solid state device and phosphors to produce light approximating a black body radiation spectrum: Solid state light emitting devices and/or solid state lighting devices use three or more phosphors excited by energy from a solid state source. The phosphors are selected and included in proportions such that the visible light output of such a device exhibits a radiation spectrum that approximates a black body... Agent: AblIPHolcing LLC

20130009187 - Nitride-based semiconductor device and method for fabricating the same: A nitride-based semiconductor light-emitting device 100 includes a GaN substrate 10, of which the principal surface is an m-plane 12, a semiconductor multilayer structure 20 that has been formed on the m-plane 12 of the GaN-based substrate 10, and an electrode 30 arranged on the semiconductor multilayer structure 20. The... Agent: Panasonic Corporation

20130009183 - Reflective circuit board for led backlight: An LED device with improved LED efficiency is presented. A top surface of a circuit board carrying the LED die is covered with a reflective layer. The reflective surface on top of the circuit board allows the light reflected off a surface of a waveguide to be recycled by being... Agent:

20130009198 - Light emitting device and method for manufacturing the same: A light emitting device according to an embodiment includes a second electrode layer comprising at least one projection part; at least one current blocking layer on the projection part of the second electrode layer; a second conductive type semiconductor layer on the second electrode layer and the current blocking layer;... Agent:

20130009197 - Light emitting diode having electrode pads: Exemplary embodiments of the present invention relate to a including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second... Agent: Seoul Opto Device Co., Ltd.

20130009196 - Light-emitting diode element and light-emitting diode device: A light-emitting diode element disclosed in the present application, comprises a first semiconductor layer made of a gallium nitride-based compound and having first and second front surface regions and a rear surface, a second semiconductor layer at the first front surface region and an active layer interposed therebetween. A first... Agent: Panasonic Corporation

20130009194 - Light-emitting module, light-emitting device, and method for manufacturing the light-emitting module: A highly reliable light-emitting module or light-emitting device is provided. A method for manufacturing a highly reliable light-emitting module is provided. The light-emitting module includes, between a first substrate and a second substrate, a first electrode provided over the first substrate, a second electrode provided over the first electrode with... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130009193 - Method of fabricating light receiving element and apparatus for fabricating light receiving element: A method of fabricating a light receiving element includes depositing a material for one of a P-type semiconductor, an N--type semiconductor, and electrodes, while applying a reverse bias voltage and irradiating light of a desired wavelength longer than an absorption wavelength of the material. The deposition has a non-adiabatic flow... Agent:

20130009192 - Nitride semiconductor light emitting device: Provided is a nitride semiconductor light emitting device including p-type nitride semiconductor layer, an n-type nitride semiconductor layer, and an active layer formed therebetween. A contact layer is positioned between the p-type nitride semiconductor layer and a p-side electrode. The contact layer includes a first p-type nitride layer having a... Agent:

20130009195 - Nitride semiconductor light emitting element and method for manufacturing same: A nitride semiconductor light emitting element has; a laminate of a first conduction type semiconductor layer, a light emitting layer and a second conduction type semiconductor layer of a different conduction type from that of the first conduction type semiconductor layer; and electrodes with a laminate structure formed on the... Agent: Nichia Corporation

20130009199 - Organic light-emitting device having homogenous brightness distribution: An organic light-emitting device comprising an active layer for producing radiation having a first side surface and a second side surface adjoining a corner edge. A first contact strip extends along the first side surface for injecting charge carriers of a first type into the active layer. A second contact... Agent:

20130009191 - Surface mounted led package and manufacturing method therefor: A surface mounted LED package includes an insulated body, a first conductive part, a second conductive part, a LED chip and a bonding wire. The insulated body has a receiving portion and a bond-pad island. The receiving portion is formed with an inner side wall and a flat bottom. The... Agent: Lite-on Singapore Pte. Ltd.

20130009200 - Curable composition: The present invention relates to a curable composition. A curable composition may be provided; which shows excellent processability and workability; which shows excellent light extraction efficiency, crack resistance, hardness, thermal shock resistance and adhesive strength after curing; and which has excellent reliability and long-term reliability under high-temperature and/or high-moisture conditions.... Agent: Lg Chem, Ltd.

20130009201 - Curable composition: A curable composition is provided. A cured product showing excellent light extraction efficiency, crack resistance, hardness, thermal shock resistance and adhesive strength after a curing, as well as showing excellent processability and workability is provided. Also, surface stickiness may be prevented in the cured product without causing turbidity etc.... Agent: Lg Chem, Ltd.

20130009202 - Group iii nitride semiconductor device, method of fabricating group iii nitride semiconductor device: A group-III nitride semiconductor device includes a light emitting layer emitting light of a wavelength in the range of 480 to 600 nm; a first contact layer over the light emitting layer; a second contact layer in direct contact with the first contact layer; and a metal electrode in direct... Agent: Sumitomo Electric Industries, Ltd.

20130009203 - Semiconductor light-emitting element and manufacturing method thereof: A semiconductor light-emitting element includes: a substrate; and a nitride semiconductor multilayer film provided on an upper surface of the substrate and including an active layer. A recess, a stepped portion, or a protruding portion is formed in an active layer or a layer that contacts a lower surface of... Agent: Panasonic Corporation

20130009204 - Bidirectional dual-scr circuit for esd protection: An ESD protection circuit includes a pad of an IC, circuitry coupled to the pad for buffering data, an RC power clamp on the IC, and first and second silicon controlled rectifier (SCR) circuits. The RC power clamp is coupled between a positive power supply terminal and a ground terminal.... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20130009205 - Semiconductor device: A semiconductor device has a first conductivity-type semiconductor substrate, second conductivity-type channel regions, and second conductivity-type thinning-out regions. The channel regions and the thinning-out regions are formed adjacent to a substrate surface of the semiconductor substrate. Further, a hole stopper layer is formed in each of the thinning-out regions to... Agent: Denso Corporation

20130009206 - Semiconductor device: In a semiconductor device in which a diode and an IGBT are formed in a main region of a same semiconductor substrate, in order to obtain a sufficiently large sense IGBT current in a stable manner, a sense region is provided with a first region in which a distance from... Agent: Toyota Jidosha Kabushiki Kaisha

20130009207 - Vertical npnp structure in a triple well cmos process: A vertical NPNP structure fabricated using a triple well CMOS process, as well as methods of making the vertical NPNP structure, methods of providing electrostatic discharge (ESD) protection, and design structures for a BiCMOS integrated circuit. The vertical NPNP structure may be used to provide on-chip protection to an input/output... Agent: International Business Machines Corporation

20130009208 - High density thyristor random access memory device and method: Memory devices and methods of making memory devices are shown. Methods and configurations as shown provide folded and vertical memory devices for increased memory density. Methods provided allow trace wiring in a memory array to be formed on or near a surface of a memory device.... Agent:

20130009210 - Metal oxide semiconductor having epitaxial source drain regions and method of manufacturing same using dummy gate proces: A method of manufacturing a transistor by which sufficient stress can be applied to a channel region within allowable ranges of concentrations of Ge and C in a mixed crystal layer. A semiconductor device is also provided.... Agent: Sony Corporation

20130009209 - Semiconductor device and method for manufacturing semiconductor device: To provide a transistor including an oxide semiconductor layer and having electric characteristics required depending on an intended use and provide a semiconductor device including the transistor, in a transistor in which a semiconductor layer, source and drain electrode layers, a gate insulating film, and a gate electrode are stacked... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130009211 - Silicon germanium film formation method and structure: Epitaxial deposition of silicon germanium in a semiconductor device is achieved without using masks. Nucleation delays induced by interactions with dopants present before deposition of the silicon germanium are used to determine a period over which an exposed substrate surface may be subjected to epitaxial deposition to form a layer... Agent: International Business Machines Corporation

20130009212 - Transistor device: To provide a transistor device, which is composed of a compound semiconductor, having a multilayer structure in which a high electron mobility transistor (HEMT) and a heterojunction bipolar transistor (HBT) are overlapped on the same substrate and epitaxial-grown thereon, wherein a band gap energy of an indium gallium phosphide layer... Agent:

20130009213 - Semiconductor devices and methods of fabricating the same: Semiconductor devices and a methods of fabricating the semiconductor devices are provided. The semiconductor devices may include a pattern on a substrate. The semiconductor devices may also include a capping dielectric layer on the pattern. The semiconductor devices may further include a first nitride layer on the capping dielectric layer.... Agent: Samsung Electronics Co., Ltd.

20130009214 - Microwell structures for chemically-sensitive sensor arrays: Methods and apparatus relating to FET arrays for monitoring chemical and/or biological reactions such as nucleic acid sequencing-by-synthesis reactions. Some methods provided herein relate to improving signal (and also signal to noise ratio) from released hydrogen ions during nucleic acid sequencing reactions.... Agent: Life Technologies Corporation

20130009215 - Vertical diode using silicon formed by selective epitaxial growth: Some embodiments relate to an apparatus that exhibits vertical diode activity to occur between a semiconductive body and an epitaxial film that is disposed over a doping region of the semiconductive body. Some embodiments include an apparatus that causes both vertical and lateral diode activity. Some embodiments include a gated... Agent: Infineon Technologies Ag

20130009218 - Metal oxide semiconductor field transistor: A metal oxide semiconductor field transistor including a source region, a drain region, a gate and a gate dielectric layer is provided. The drain region is located in a substrate. The drain region has an elliptical spiral shape and a starting portion of the drain region is strip or water... Agent: Nuvoton Technology Corporation

20130009223 - Patterning method, method of manufacturing organic field effect transistor, and method of manufacturing flexible printed circuit board: In the condition where a nozzle for applying a coating liquid is disposed on the lower side of a substrate and a substrate surface controlled in wettability is faced down, the nozzle and the substrate are moved relative to each other, whereby the coating liquid is applied to a desired... Agent: Sony Corporation

20130009219 - Semiconductor device and manufacturing method thereof: Provided are a transistor which has electrical characteristics requisite for its purpose and uses an oxide semiconductor layer and a semiconductor device including the transistor. In the bottom-gate transistor in which at least a gate electrode layer, a gate insulating film, and the semiconductor layer are stacked in this order,... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130009220 - Semiconductor device and method for manufacturing semiconductor device: A transistor which is formed using an oxide semiconductor layer and has electric characteristics needed for the intended use, and a semiconductor device including the transistor are provided. The transistor is formed using an oxide semiconductor stack including at least a first oxide semiconductor layer in contact with a source... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130009216 - Semiconductor device with a dislocation structure and method of forming the same: A semiconductor device with bi-layer dislocation and method of fabricating the semiconductor device is disclosed. The exemplary semiconductor device and method for fabricating the semiconductor device enhance carrier mobility. The method includes providing a substrate having a gate stack. The method further includes performing a first pre-amorphous implantation process on... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130009221 - Semiconductor devices including epitaxial layers and related methods: A semiconductor device may include a semiconductor layer having a first conductivity type, a well region of a second conductivity type in the semiconductor layer wherein the first and second conductivity types are different, and a terminal region of the first conductivity type in the well region. An epitaxial semiconductor... Agent: Cree, Inc.

20130009217 - Transistor, method for manufacturing transistor, and semiconductor chip comprising the transistor: It is provided a transistor, a method for manufacturing the transistor, and a semiconductor chip comprising the transistor. A method for manufacturing a transistor may comprise: defining an active area on a semiconductor substrate, and forming on the active area a gate stack, a primary spacer, and source/drain regions, wherein... Agent:

20130009222 - Transistors with immersed contacts: Embodiments of a semiconductor structure include a first current electrode region, a second current electrode region, and a channel region. The channel region is located between the first current electrode region and the second current electrode region, and the channel region is located in a fin structure of the semiconductor... Agent: Freescale Semiconductor, Inc.

20130009224 - Solid-state imaging device, electronic device, and manufacturing method for solid-state imaging device: In a manufacturing method for a solid-state imaging device, a photoelectric conversion portion including a first impurity layer whose carrier polarity is a first conductivity type is formed within a substrate, a second impurity layer, whose carrier polarity is a second conductivity type opposite to the first conductivity type, is... Agent: Sony Corporation

20130009226 - Dram devices and methods of manufacturing the same: A DRAM device includes a substrate including an active region having an island shape and a buried gate pattern. A mask pattern is over an upper surface portion of the substrate between portions of the buried gate pattern. A capping insulating layer fills a gap between portions of the mask... Agent: Samsung Electronics Co., Ltd.

20130009225 - Monolithically integrated active snubber: A semiconductor device containing an extended drain MOS transistor with an integrated snubber formed by forming a drain drift region of the MOS transistor, forming a snubber capacitor including a capacitor dielectric layer and capacitor plate over the extended drain, and forming a snubber resistor over a gate of the... Agent: Texas Instruments Incorporated

20130009227 - Semiconductor device with a dynamic gate-drain capacitance: A semiconductor device with a dynamic gate drain capacitance. One embodiment provides a semiconductor device. The device includes a semiconductor substrate, a field effect transistor structure including a source region, a first body region, a drain region, a gate electrode structure and a gate insulating layer. The gate insulating layer... Agent: Infineon Technologies Austria Ag

20130009228 - Differential varactor device: The present invention provides a differential varactor device including a substrate having a first conductive type, a well having a second conductive type, five doped regions having the second conductive type, a first gate, a second gate, a third gate, and a fourth gate. The well is disposed in the... Agent:

20130009230 - Optimization of critical dimensions and pitch of patterned features in and above a substrate: A die is formed with different and optimized critical dimensions in different device levels and areas of those device levels using photolithography and etch techniques. One aspect of the invention provides for a memory array formed above a substrate, with driver circuitry formed in the substrate. A level of the... Agent:

20130009229 - Semiconductor device and method of manufacturing the same: A semiconductor device includes memory blocks each configured to comprise a pair of channels, each channel including a pipe channel formed in a pipe gate of the memory block and a drain-side channel and a source-side channel coupled to the pipe channel; first slits placed between the memory blocks adjacent... Agent: Sk Hynix Inc.

20130009231 - Method for efficiently fabricating memory cells with logic fets and related structure: According to one exemplary embodiment, a method for concurrently fabricating a memory region with a logic region in a common substrate includes forming a lower dielectric segment in the common substrate in the memory and logic regions. The method also includes forming a polysilicon segment over the lower dielectric segment... Agent: Broadcom Corporation

20130009232 - Non-volatile memory cell and fabricating method thereof: A non-volatile memory cell includes a substrate, two charge trapping structures, a gate oxide layer, a gate and two doping regions. The charge trapping structures are disposed on the substrate separately. The gate oxide layer is disposed on the substrate between the two charge trapping structures. The gate is disposed... Agent:

20130009234 - Semiconductor device and manufacturing method thereof: A semiconductor device includes a substrate, a first gate insulation film formed over a first device forming region disposed in the substrate, a second gate insulation film formed over a second device forming region disposed in the substrate, a lower gate electrode film formed over the first gate insulation film... Agent: Renesas Electronics Corporation

20130009233 - Transistor constructions and processing methods: A transistor construction includes a first floating gate having a first conductive or semiconductive surface and a second floating gate having a second conductive or semiconductive surface. A dielectric region is circumferentially surrounded by the first surface. The region is configured to reduce capacitive coupling between the first and second... Agent: Micron Technology, Inc.

20130009235 - Non-volatile memory device and method of manufacturing the same: A non-volatile memory device includes first and second vertical channel layers generally protruding upwardly from a semiconductor substrate substantially in parallel; a first gate group configured to include a plurality of memory cell gates which are stacked substantially along the first vertical channel layer and are isolated from each other... Agent: Sk Hynix Inc.

20130009236 - Three-dimensional semiconductor memory devices using direct strapping line connections: Memory devices include a plurality of elongate gate stacks extending in parallel on a substrate and at least one insulation region disposed in a trench between adjacent ones of the gate stacks. The at least one insulation region has linear first portions having a first width and widened second portions... Agent: Samsung Electronics Co., Ltd.

20130009239 - 3-d non-volatile memory device and method of manufacturing the same: A 3-D non-volatile memory device includes a pipe gate having a first trench formed therein, word lines stacked in multiple layers over the pipe gate, second trenches coupled to the first trench and formed to penetrate the word lines, a first channel layer formed within the first trench, and second... Agent:

20130009237 - Charge balance semiconductor devices with increased mobility structures: Charge balanced semiconductor devices with increased mobility structures and methods for making and using such devices are described. The semiconductor devices contain a substrate heavily doped with a dopant of a first conductivity type, a strained region containing a strain dopant in an upper portion of the substrate, an epitaxial... Agent:

20130009238 - Enhancing schottky breakdown voltage (bv) without affecting an integrated mosfet-schottky device layout: This invention discloses a semiconductor power device that includes an active cell area having a plurality of power transistor cells. Each of said power transistor cells has a planar Schottky diode that includes a Schottky junction barrier metal covering areas above gaps between separated body regions between two adjacent power... Agent:

20130009240 - Semiconductor device and method for manufacturing the same: A semiconductor device including a drain region of a first conductivity type formed on a semiconductor substrate; an element forming region that is provided on the drain region and that has a concave portion reaching the drain region; a gate electrode disposed in the concave portion; a superjunction structure portion... Agent: Rohm Co., Ltd.

20130009242 - Mos device with low injection diode: A semiconductor device is formed on a semiconductor substrate. The device includes: a drain; an epitaxial layer overlaying the drain, wherein a drain region extends into the epitaxial layer; and an active region. The active region includes: a body disposed in the epitaxial layer, having a body top surface; a... Agent: Alpha & Omega Semiconductor Limited

20130009241 - Semiconductor device and method for manufacturing same: According to one embodiment, a semiconductor device includes a drain layer, a drift, a base, a source region, a plurality of gates provided on the drift region, the base, and the source region, and arranged in a manner spaced apart from each other, a first interlayer insulating film arranged between... Agent: Kabushiki Kaisha Toshiba

20130009243 - Ldmos with enhanced safe operating area (soa) and method therefor: A laterally double diffused metal oxide semiconductor device includes a well region having a first conductivity, a first carrier redistribution region having the first conductivity type, wherein the second well region is under the well region, and a highly doped buried layer under the second well region. The highly doped... Agent: Freescale Semiconductor, Inc.

20130009244 - Mosfet and method for manufacturing the same: The present application discloses an MOSFET and a method for manufacturing the same. The MOSFET comprises: a semiconductor substrate; a first insulation buried layer disposed on the semiconductor substrate; a back gate formed in a first semiconductor layer which is disposed on the first insulation buried layer; a second insulation... Agent:

20130009245 - Semiconductor devices with low junction capacitances and methods of fabrication thereof: Semiconductor devices with low junction capacitances and methods of fabrication thereof are described. In one embodiment, a method of forming a semiconductor device includes forming isolation regions in a substrate to form active areas. The sidewalls of the active areas are enclosed by the isolation regions. The isolation regions are... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130009246 - Bulk finfet with uniform height and bottom isolation: A fin Field Effect Transistor (finFET), an array of finFETs, and methods of production thereof. The finFETs are provided on an insulating region, which may optionally contain dopants. Further, the finFETs are optionally capped with a pad. The finFETs provided in an array are of uniform height.... Agent: International Business Machines Corporation

20130009247 - Method for manufacturing semiconductor device: It is an object to form a conductive region in an insulating film without forming contact holes in the insulating film. A method is provided, in which an insulating film is formed over a first electrode over a substrate, a first region having many defects is formed at a first... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130009248 - Independently accessed double-gate and tri-gate transistors in same process flow: A method for fabricating double-gate and tri-gate transistors in the same process flow is described. In one embodiment, a sacrificial layer is formed over stacks that include semiconductor bodies and insulative members. The sacrificial layer is planarized prior to forming gate-defining members. After forming the gate-defining members, remaining insulative member... Agent: Intel Corporation

20130009249 - Finfet devices and methods of manufacture: A finFET structure and method of manufacture such structure is provided with lowered Ceff and enhanced stress. The finFET structure includes a plurality of finFET structures and a stress material forming part of a gate stack and in a space between adjacent ones of the plurality of finFET structures.... Agent: International Business Machines Corporation

20130009250 - Dummy patterns for improving width dependent device mismatch in high-k metal gate process: A semiconductor integrated circuit device including: a diffusion area defined by an isolation region in a substrate; a PMOS transistor comprising a metal gate and a high-k dielectric over the diffusion area and source/drain regions sandwiching the metal gate in a first direction; a plurality of dummy diffusion areas surrounding... Agent: Mediatek Inc.

20130009251 - Offset screen for shallow source/drain extension implants, and processes and integrated circuits: A process of integrated circuit manufacturing includes providing (32, 33) a spacer on a gate stack to provide a horizontal offset over the channel region for otherwise-direct application (34) of a PLDD implant dose in semiconductor, additionally depositing (35) a seal substance to provide a screen thickness vertically while thereby... Agent: Texas Instruments Incorporated

20130009252 - High voltage bipolar transistor with trench field plate: A bipolar transistor structure includes an epitaxial layer on a semiconductor substrate, a bipolar transistor device formed in the epitaxial layer and a trench structure formed in the epitaxial layer adjacent at least two opposing lateral sides of the bipolar transistor device. The trench structure includes a field plate spaced... Agent: Infineon Technologies Austria Ag

20130009254 - Electrical device and fabrication method: An electrical device with a fin structure, a first section of the fin structure having a first width and a first height, a second section of the fin structure having a second width and a second height, wherein the first width is smaller than the second width and the first... Agent: Infineon Technologies Ag

20130009253 - Power mosfet with integrated gate resistor and diode-connected mosfet: A power MOSFET is formed in a semiconductor device with a parallel combination of a shunt resistor and a diode-connected MOSFET between a gate input node of the semiconductor device and a gate of the power MOSFET. A gate of the diode-connected MOSFET is connected to the gate of the... Agent: Texas Instruments Incorporated

20130009255 - Field effect transistor with suppressed corner leakage through channel material band-edge modulation, design structure and method: Disclosed are embodiments of field effect transistors (FETs) having suppressed sub-threshold corner leakage, as a function of channel material band-edge modulation. Specifically, the FET channel region is formed with different materials at the edges as compared to the center. Different materials with different band structures and specific locations of those... Agent: International Business Machines Corporation

20130009256 - Semiconductor device: The semiconductor device according to the present invention includes a semiconductor layer of a first conductivity type, body regions of a second conductivity type plurally formed on a surface layer portion of the semiconductor layer at an interval, a source region of the first conductivity type formed on a surface... Agent: Rohm Co Ltd

20130009257 - Replacement metal gate with a conductive metal oxynitride layer: A disposable gate structure and a gate spacer are formed on a semiconductor substrate. A disposable gate material portion is removed and a high dielectric constant (high-k) gate dielectric layer and a metal nitride layer are formed in a gate cavity and over a planarization dielectric layer. The exposed surface... Agent: International Business Machines Corporation

20130009259 - Magnetoresistive element and magnetic memory using the same: According to one embodiment, a magnetoresistive element includes the following configuration. A first magnetic layer has an invariable magnetization. A second magnetic layer has a variable magnetization. A nonmagnetic layer is provided between the first and the second magnetic layers. The first magnetic layer has a structure in which first,... Agent: Kabushiki Kaisha Toshiba

20130009260 - Method and system for providing a magnetic junction using half metallic ferromagnets: A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The magnetic junction is configured such that the free... Agent:

20130009261 - Spin-current switchable magnetic memory element and method of fabricating the memory element: A spin-current switchable magnetic memory element includes a plurality of magnetic layers including a perpendicular magnetic anisotropy component, at least one of the plurality of magnetic layers including an alloy of a rare-earth metal and a transition metal, and at least one barrier layer formed adjacent to at least one... Agent:

20130009258 - Tunneling magnetoresistance sensor: A tunneling magnetoresistance sensor including a substrate, an insulating layer, a tunneling magnetoresistance component and an electrode array is provided. The insulating layer is disposed on the substrate. The tunneling magnetoresistance component is embedded in the insulating layer. The electrode array is formed in a single metal layer and disposed... Agent: Voltafield Technology Corporation

20130009262 - Neutron detection using gd-loaded oxide and nitride heterojunction diodes: Solid state neutron detection utilizing gadolinium as a neutron absorber is described. The new class of narrow-gap neutron-absorbing semiconducting materials, including Gd-doped HfO2, Gd-doped EuO, Gd-doped GaN, Gd2O3 and GdN are included in three types of device structures: (1) a p-n heterostructure diode with a ˜30 μm Gd-loaded semiconductor grown... Agent: Quantum Devices, LLC

20130009263 - Solid-state imaging device and electronic apparatus: A solid-state imaging device includes a plurality of photoelectric conversion regions stacked at different depths within a semiconductor substrate of each pixel to photoelectrically convert light of different wavelength bands, and a discharge region formed between the photoelectric conversion regions adjacent to each other in a depth direction of the... Agent: Sony Corporation

20130009264 - Moisture barrier: A moisture barrier, device or product having a moisture barrier or a method of fabricating a moisture barrier having at least a polymer layer, and interfacial layer, and a barrier layer. The polymer layer may be fabricated from any suitable polymer including, but not limited to, fluoropolymers such as polyethylene... Agent: Beneq Oy

20130009266 - Photodiode array, method for determining reference voltage, and method for determining recommended operating voltage: A reverse bias voltage is applied to a photodiode array provided with a plurality of avalanche photodiodes operated in Geiger mode and with quenching resistors connected in series to the respective avalanche photodiodes. Electric current is measured with change of the reverse bias voltage applied, and the reverse bias voltage... Agent: Hamamatsu Photonics K.k.

20130009265 - Photon counting uv-apd: An avalanche photodiode (APD) has a first semiconductor substrate having a first doping type. A first semiconductor layer is on top of the first semiconductor substrate. The first semiconductor layer is doped with the first doping type. A second epitaxial layer is on top of the first semiconductor layer. The... Agent: Excelitas Technologies Corp.

20130009268 - Alignment marks and alignment methods for aligning backside components to frontside components in integrated circuits: An imaging system may include an imager integrated circuit with frontside components such as imaging pixels and backside components such as color filters and microlenses. The imager integrated circuit may be mounted to a carrier wafer with alignment marks. Bonding marks on the carrier wafer and the imager integrated circuit... Agent:

20130009267 - Providing variable cell density and sizes in a radiation detector: An apparatus and method to decrease light saturation in a photosensor array and increase detection efficiency uses a light distribution profile from a scintillator-photodetector geometry to configure the photosensor array to have a non-uniform sensor cell pattern, with varying cell density and/or varying cell size and shape. A solid-state photosensor... Agent: Siemens Aktiengesellschaft

20130009269 - Alignment marks and alignment methods for aligning backside components to frontside components in integrated circuits: An imaging system may include an imager integrated circuit with frontside components such as imaging pixels and backside components. The imager integrated circuit may also include mirrored alignment marks formed with the frontside components. As part of forming the backside components, the integrated circuit may be flipped over such that... Agent:

20130009270 - Backside illumination sensor having a bonding pad structure and method of making the same: The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure comprises a device substrate having a front side and a back side; an interconnect structure disposed on the front side of the device substrate; and a bonding pad connected to the interconnect structure. The bonding pad comprises... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130009271 - Schottky-clamped bipolar transistor with reduced self heating: The self heating of a high-performance bipolar transistor that is formed on a fully-isolated single-crystal silicon region of a silicon-on-insulator (SOI) structure is substantially reduced by forming a Schottky structure in the same fully-isolated single-crystal silicon region as the bipolar transistor is formed.... Agent:

20130009272 - Semiconductor device: A semiconductor device includes a semiconductor substrate, a semiconductor element disposed in the semiconductor substrate, a guard ring surrounding at least a part of a periphery of the semiconductor element, a guard ring terminal coupled with the guard ring, a power supply line divided from a line coupled with a... Agent: Denso Corporation

20130009273 - Semiconductor device and method for fabricating the same: A semiconductor device and a method for fabricating a semiconductor device are provided. The method for fabricating a semiconductor device includes forming an isolation layer over a semiconductor substrate defining first and second regions, etching the isolation layer at an edge of the first region to form a guard ring... Agent:

20130009274 - Memory having three-dimensional structure and manufacturing method thereof: Provided are a memory having a 3-dimensional structure and a method of fabricating the same, by which high integration density can be obtained. A contact region connected to a word line is formed to extend from a cell region in a first direction. A plurality of step difference layers constituting... Agent: Industry-university Cooperation Foundation Hanyang University

20130009275 - Semiconductor integrated circuit device and terminal structure of standard cell: A semiconductor integrated circuit device includes a first standard cell and a second standard cell adjacent to the first standard cell in a first direction. An interconnect is provided to extend in the first direction to electrically connect input and output terminal portions, which extend in a second direction orthogonal... Agent: Panasonic Corporation

20130009276 - Methods of filling isolation trenches for semiconductor devices and resulting structures: The invention relates to a method and resulting structure that can substantially minimize and/or eliminate void formation during an isolation trench isolation fill process for typical trench shaped and goal-post shaped isolation regions. First, a thin thermal oxidation layer is grown on the sidewall of each trench and then a... Agent:

20130009277 - Structure and method for forming isolation and buried plate for trench capacitor: A structure and method for forming isolation and a buried plate for a trench capacitor is disclosed. Embodiments of the structure comprise an epitaxial layer serving as the buried plate, and a bounded deep trench isolation area serving to isolate one or more deep trench structures. Embodiments of the method... Agent: International Business Machines Corporation

20130009278 - Stacked semiconductor device including esd protection circuits and method of fabricating the stacked semiconductor device: A stacked semiconductor device includes a first semiconductor die that has a front side electrically coupled to a substrate pad, the substrate pad is connected to an exterior, a backside of the first semiconductor die, a first integrated circuit, first ESDs, and TSVs, and the TSVs are coupled to the... Agent:

20130009279 - Integrated circuits with configurable inductors: Integrated circuits with phase-locked loops are provided. Phase-locked loops may include an oscillator, a phase-frequency detector, a charge pump, a loop filter, a voltage-controlled oscillator, and a programmable divider. The voltage-controlled oscillator may include multiple inductors, an oscillator circuit, and a buffer circuit. A selected one of the multiple inductors... Agent:

20130009280 - Bipolar junction transistors with a link region connecting the intrinsic and extrinsic bases: Methods for fabricating bipolar junction transistors, bipolar junction transistors made by the methods, and design structures for a bipolar junction transistor. The bipolar junction transistor includes a dielectric layer on an intrinsic base and an extrinsic base at least partially separated from the intrinsic base by the dielectric layer. An... Agent: International Business Machines Corporation

20130009281 - Multilayer select devices and methods related thereto: Methods of forming and tuning a multilayer select device are provided, along with apparatus and systems which include them. As is broadly disclosed in the specification, one such method can include forming a first region having a first conductivity type; forming a second region having a second conductivity type and... Agent: Micron Technology, Inc.

20130009283 - Methods to reduce the critical dimension of semiconductor devices and related semiconductor devices: A method of forming features on a target layer. The features have a critical dimension that is triple- or quadruple-reduced compared to the critical dimension of portions of a resist layer used as a mask. An intermediate layer is deposited over a target layer and the resist layer is formed... Agent: Micron Technology, Inc.

20130009282 - Microelectronic structure including air gap: A microelectronic structure and a method for fabricating the microelectronic structure provide a plurality of voids interposed between a plurality of conductor layers. The plurality of voids is also located between a liner layer and an inter-level dielectric layer. The voids provide for enhanced electrical performance of the microelectronic structure.... Agent: International Business Machines Corporation

20130009285 - Semiconductor chip and semiconductor wafer: A semiconductor wafer includes at least one chip formed on a substrate, and a scribe line region surrounding the chip. The chip includes a device formation region, and a chip boundary region surrounding the device formation region and formed between the device formation region and the scribe line region. The... Agent:

20130009284 - Substrate dividing method: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within... Agent: Hamamatsu Photonics K.k.

20130009287 - Accurate deposition of nano-objects on a surface: The invention notably concerns a method for depositing nano-objects on a surface. The method includes: providing a substrate with surface patterns on one face thereof; providing a transfer layer on said face of the substrate; functionalizing areas on a surface of the transfer layer parallel to said face of the... Agent: International Business Machines Corporation

20130009286 - Semiconductor chip and flip-chip package comprising the same: A semiconductor chip includes stress-relief to mitigate the effects of differences in coefficients of thermal expansion (CTE) between a printed circuit board (PCB) and a semiconductor chip and a flip-chip package including the semiconductor chip. The semiconductor chip includes a stress-relief buffer coupling a bump and a semiconductor chip pad.... Agent: Samsung Electronics Co., Ltd.

20130009288 - Semiconductor device and method for fabricating the same: A method for fabricating a semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a dielectric layer on the substrate, wherein the dielectric layer comprises metal interconnects therein; forming a top metal layer on the dielectric layer; and forming a passivation layer on the top... Agent:

20130009289 - Semiconductor device: An object of the present invention is providing a semiconductor device that is capable of improving the reliability of a semiconductor element and enhancing the mechanical strength without suppressing the scale of a circuit. The semiconductor device includes an integrated circuit sandwiched between first and second sealing films, an antenna... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130009293 - Packaging substrate and method of fabricating the same: A packaging substrate includes a first dielectric layer; a plurality of first conductive pads embedded in and exposed from a first surface of the first dielectric layer; a first circuit layer embedded in and exposed from a second surface of the first dielectric layer; a plurality of first metal bumps... Agent: Unimicron Technology Corporation

20130009290 - Power module package and method for manufacturing the same: Disclosed herein is a power module package including: a first substrate; a second substrate having a pad for connection to the first substrate formed on one side or both sides of one surface thereof and having external connection terminals for connection to the outside formed on the other surface thereof;... Agent: Samsung Electro-mechanics Co., Ltd.

20130009291 - Power module package and method for manufacturing the same: Disclosed herein are a power module package and a method for manufacturing the same. The power module package includes: a base substrate having grooves formed between a plurality of semiconductor device mounting areas; semiconductor devices mounted on the semiconductor device mounting areas of the base substrate; and a molding formed... Agent: Samsung Electro-mechanics Co., Ltd.

20130009292 - Semiconductor device: According to an embodiment, a semiconductor device includes a first frame, a semiconductor element fixed to the first frame, a second frame, a third frame and a resin package. The second frame faces the first frame and is away from the first frame, the second frame being electrically connected to... Agent: Kabushiki Kaisha Toshiba

20130009294 - Multi-chip package having leaderframe-type contact fingers: Disclosed is a multi-chip package having leadframe-type contact fingers, primarily comprising a leadframe, a non-conductive tape, a first chip and a second chip disposed on the first chip. The leadframe includes a die paddle on which the first chip is disposed and a plurality of first contact fingers, moreover, at... Agent:

20130009300 - Semiconductor device and method for manufacturing same: A dug portion (50) in which a die-bonding material is filled is provided to a lower surface of a stamping nozzle (42) used in a step of applying the die-bonding material onto a chip mounting portion of a wiring board. Planar dimensions of the dug portion (50) are smaller than... Agent: Renesas Electronics Corporation

20130009299 - Semiconductor device and method of manufacturing the same: A semiconductor device is inhibited from being degraded in reliability. The semiconductor device has a tab including a top surface, a bottom surface, and a plurality of side surfaces. Each of the side surfaces of the tab has a first portion continued to the bottom surface of the tab, a... Agent: Renesas Electronics Corporation

20130009295 - Semiconductor device including a contact clip having protrusions and manufacturing thereof: A semiconductor device includes a leadframe with a die pad and a first lead, a semiconductor chip with a first electrode, and a contact clip with a first contact area and a second contact area. The semiconductor chip is placed over the die pad. The first contact area is placed... Agent: Infineon Technologies Ag

20130009297 - Semiconductor device package having configurable lead frame fingers: Embodiments of the present invention relate to the use of configurable lead frame fingers in a semiconductor device package. More specifically, the lead frame of a device package can include a plurality of fingers used to support and provide electrical contact to the die. The die can include a plurality... Agent: Gem Services, Inc.

20130009296 - Semiconductor device package having features formed by stamping: Embodiments of the present invention relate to the use of stamping to form features on a lead frame of a semiconductor device package. The lead frame can include a plurality of terminals with stamped features at edges of the terminals. The stamped features can include flattened portions that are thinner... Agent: Gem Services, Inc.

20130009298 - Semiconductor module: A semiconductor module includes: an insulating plate; a plurality of metal patterns formed on the insulating plate and spaced apart from each other; a power device chip solder-joined on one the metal pattern; a lead frame solder-joined on the metal pattern to which the power device chip is not solder-joined,... Agent: Mitsubishi Electric Corporation

20130009301 - Magnesium-based composite member, heat radiation member, and semiconductor device: A magnesium-based composite member is provided with a through hole through which a fastening member for attachment to a fixing target is to be inserted. A substrate is provided with a substrate hole through which the fastening member is to be inserted, and made of a composite material which is... Agent: Sumitomo Electric Industries, Ltd.

20130009302 - Semiconductor device and manufacturing method therefor: A semiconductor device (130) including: a bonding substrate (100); a thin film element (80) formed on the bonding substrate (100); and a semiconductor element (90a) bonded to the bonding substrate (100), the semiconductor element including a semiconductor element main body (50) and a plurality of underlying layers (51-54) stacked on... Agent: Sharp Kabushiki Kaisha

20130009304 - Chip-stacked semiconductor package: A chip-stacked semiconductor package including a stacked chip structure including a plurality of separate chips stacked on each other; a flexible circuit substrate having the stacked chip structure mounted on a first side of the flexible circuit substrate in a first region of the flexible circuit substrate, and being electrically... Agent: Samsung Electronics Co., Ltd.

20130009303 - Connecting function chips to a package to form package-on-package: A package-on-package (PoP) comprises a substrate with a plurality of substrate traces, a first function chip on top of the substrate connected to the substrate by a plurality of bond-on-trace connections, and a second function chip on top of the first function chip, directly connected to the substrate. Another package-on-package... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130009306 - Packaging substrate and fabrication method thereof: A packaging substrate includes a first dielectric layer, a first circuit layer, a first metal bump, and a built-up structure. The first metal bump and the first circuit layer are embedded in and exposed from two surfaces of the first dielectric layer. The end of the first metal bump is... Agent: Unimicron Technology Corporation

20130009305 - Semiconductor device and method of manufacturing the same: A semiconductor device having a first via and a first interconnect supplying a high current is provided in which a first surface having the first via and the first interconnect is planar. The semiconductor device has a first via penetrating a first substrate from a first surface of the first... Agent: Renesas Electronics Corporation

20130009307 - Forming wafer-level chip scale package structures with reduced number of seed layers: A method includes forming a passivation layer over a metal pad, which is overlying a semiconductor substrate. A first opening is formed in the passivation layer, with a portion of the metal pad exposed through the first opening. A seed layer is formed over the passivation layer and to electrically... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130009308 - Semiconductor stack package apparatus: A semiconductor stack package apparatus includes an upper semiconductor package and a lower semiconductor package. The upper semiconductor chip includes a chip pad, an upper substrate including a substrate pad formed on a top surface of the upper substrate and an upper ball land formed on a bottom surface of... Agent:

20130009309 - Conductive chip disposed on lead semiconductor package and methods of making the same: In one implementation, an apparatus includes a semiconductor die, a lead, a non-conductive epoxy, and a conductive epoxy. The semiconductor die includes an upper surface and a lower surface opposite the upper surface. The lead is electrically coupled to the upper surface of the semiconductor die. The non-conductive epoxy is... Agent:

20130009310 - Semiconductor device structures and compositions for forming same: A method of removing a metal nitride material is disclosed. The method comprises forming a semiconductor device structure comprising an exposed metal material and an exposed metal nitride material. The semiconductor device structure is subjected to a solution comprising water, ozone, and at least one additive to remove the exposed... Agent: Micron Technology, Inc.

20130009312 - Interconnect structure fabricated without dry plasma etch processing: An interconnect structure within a microelectronic structure and a method for fabricating the interconnect structure within the microelectronic structure use a developable bottom anti-reflective coating layer and at least one imageable inter-level dielectric layer located thereupon over a substrate that includes a base dielectric layer and a first conductor layer... Agent: International Business Machines Corporation

20130009311 - Semiconductor carrier, package and fabrication method thereof: A semiconductor package includes: a first encapsulant having tapered through holes each having a wide top and a narrow bottom; tapered electrical contacts disposed in the tapered through holes; circuits disposed on a top surface of the first encapsulant and each having one end connecting one of the electrical contacts... Agent: Siliconware Precision Industries Co., Ltd.

20130009313 - Semiconductor device packages with solder joint enhancement element and related methods: A semiconductor device package including a substrate, first and second solder joints, a die pad, leads and enhancement elements surrounding the die pad, a chip electrically connected to the leads, and a package body encapsulating the chip, portions of the leads, and portions of the enhancement elements, but leaving exposed... Agent:

20130009314 - Test circuit, integrated circuit, and test circuit layout method: A test circuit includes a substrate, a wiring section having a plurality of pieces of wiring, and a device-under-test section formed on the substrate, and having a device-under-test main body and a plurality of connecting electrodes for establishing connection between the main body and the plurality of pieces of wiring,... Agent: Sony Corporation

20130009316 - Apparatus and methods for dicing interposer assembly: Methods and apparatus for performing dicing of die on wafer interposers. Methods are disclosed that include receiving an interposer assembly including one or more integrated circuit dies mounted on a die side of an interposer substrate and having scribe areas defined in spaces between the integrated circuit dies, the interposer... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130009319 - Apparatus and methods for forming through vias: Methods and apparatus for forming through vias in an integrated circuit package are disclosed. An apparatus is disclosed, having a substrate having one or more bond pad terminals for receiving electrical connections on at least one surface; an encapsulation layer covering the at least one surface of the substrate and... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130009317 - Forming grounded through-silicon vias in a semiconductor substrate: A method of forming an interposer includes providing a semiconductor substrate, the semiconductor substrate having a front surface and a back surface opposite the front surface; forming one or more through-silicon vias (TSVs) extending from the front surface into the semiconductor substrate; forming an inter-layer dielectric (ILD) layer overlying the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130009323 - Interconnect structure and method of fabricating: An interconnect structure is provided which comprises a semiconductor substrate; a patterned and cured photoresist wherein the photoresist contains a low k dielectric substitutent and contains a fortification layer on its top and sidewall surfaces forming vias or trenches; and a conductive fill material in the vias or trenches. Also... Agent: International Business Machines Corporation

20130009315 - Interconnect structures with engineered dielectrics with nanocolumnar porosity: A method for forming an interconnect structure with nanocolumnar intermetal dielectric is described involving the construction of an interconnect structure using a solid dielectric, and introducing a regular array of vertically aligned nanoscale pores through stencil formation and etching to form a hole array and subsequently pinching off the tops... Agent:

20130009321 - Semiconductor device, fabrication method for a semiconductor device and electronic apparatus: Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to... Agent: Sony Corporation

20130009325 - Semiconductor element-embedded substrate, and method of manufacturing the substrate: s

20130009320 - Semiconductor package and method of manufacturing the same: There are provided a semiconductor package including an antenna formed integrally therewith, and a method of manufacturing the same. The semiconductor package includes: a semiconductor chip; a sealing part sealing the semiconductor chip; a substrate part formed on at least one surface of the sealing part; and an antenna part... Agent: Samsung Electro-mechanics Co., Ltd.

20130009318 - Stacked memory layers having multiple orientations and through-layer interconnects: In one embodiment, an apparatus includes a first memory layer oriented in a first planar orientation, a second memory layer oriented in a second planar orientation, a third memory layer oriented in the first planar orientation; and a connector that is connected to the first memory layer at an electrical... Agent:

20130009322 - Through-substrate via having a strip-shaped through-hole signal conductor: A TSV structure suitable for high speed signal transmission includes a metal strip portion that extends through a long and small diameter hole in a substrate. In one example, the metal strip portion is formed by laser ablating away portions of a metal sheath that lines a cylindrical sidewall of... Agent: Research Triangle Institute

20130009324 - Universal inter-layer interconnect for multi-layer semiconductor stacks: An apparatus, program product and method facilitate the design of a multi-layer circuit arrangement incorporating a universal, standardized inter-layer interconnect in a multi-layer semiconductor stack to facilitate interconnection and communication between functional units disposed on a stack of semiconductor dies. Each circuit layer in the multi-layer semiconductor stack is required... Agent: International Business Machines Corporation

20130009326 - Manufacturing method of chip package with coplanarity controlling feature: A chip package includes a substrate, an integrated circuit proximate a top surface of the substrate, and a cap comprising encapsulant that encapsulates the integrated circuit on at least a portion of the top surface of the substrate. The chip package further includes at least one extension feature positioned on... Agent: Stmiroelectronics Asia Pacific Pte Ltd.

20130009327 - Resin composition for semiconductor encapsulation, and semiconductor device using same: Disclosed is a resin composition for semiconductor encapsulation, containing an epoxy resin (A), a curing agent (B), and an inorganic filler material (C), the epoxy resin (A) including an epoxy resin (A-1) represented by formula (1), and the epoxy resin (A-1) containing a component represented by the formula (1) in... Agent:

20130009328 - Alignment mark, semiconductor having the alignment mark, and fabricating method of the alignment mark: An alignment mark with a sheet or a layer of copper, which is compatible with a copper process, is provided herein. In one embodiment, a whole sheet of copper (Cu) is used as a background of the alignment mark, by which the color of the background of the alignment mark... Agent: Orise Technology Co., Ltd.

20130001494 - Memory cell: A memory cell includes a memory element, a current-limiting element electrically coupled to the memory element, and a high-selection-ratio element electrically coupled to the current-limiting element. The memory element is configured to store data as a resistance state. The current-limiting element is a voltage-controlled resistor (VCR) having a resistance that... Agent: Industrial Technology Research Institute

20130001498 - Memory cells, non-volatile memory arrays, methods of operating memory cells, methods of reading to and writing from a memory cell, and methods of programming a memory cell: In one aspect, a method of operating a memory cell includes using different electrodes to change a programmed state of the memory cell than are used to read the programmed state of the memory cell. In one aspect, a memory cell includes first and second opposing electrodes having material received... Agent: Micron Technology, Inc.

20130001496 - Memory element, method of manufacturing the same, and memory device: A memory element includes: a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer provided on the first electrode side, and an ion source layer containing one or more of metallic elements, and the ion source layer being provided... Agent: Sony Corporation

20130001497 - Memory element, method of manufacturing the same, and memory device: A memory element, including: a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer containing an oxide, and the resistance change layer being provided on the first electrode side, and an ion source layer in a stacking structure of... Agent: Sony Corporation

20130001495 - Multilevel mixed valence oxide (mvo) memory: Various embodiments include a memory device and methods of forming the same. The memory device can include an electrode coupled to one or more memory elements, to store information. The electrode may comprise a number of metals, where a first one of the metals has a Gibbs free energy for... Agent:

20130001499 - Compressive structure for enhancing contact of phase change material memory cells: A process for manufacturing a PCM device comprises forming a dielectric, producing a via in the dielectric starting at an area on the surface of the dielectric by forming a via opening in the area and extending the opening into the dielectric toward and then terminating at an electrode comprising... Agent: International Business Machines Corporation

20130001500 - Pore phase change material cell fabricated from recessed pillar: A method of manufacturing an electrode is provided that includes providing a pillar of a first phase change material atop a conductive structure of a dielectric layer; or the inverted structure; forming an insulating material atop dielectric layer and adjacent the pillar, wherein an upper surface of the first insulating... Agent: International Business Machines Corporation

20130001503 - Conductive filament based memory elements and methods with improved data retention and/or endurance: A memory element can include a memory layer formed between two electrodes; at least one element within the memory layer that is oxidizable in the presence of an electric field applied across the electrodes; and an inhibitor material incorporated into at least a portion of the memory layer that decreases... Agent:

20130001501 - Memory cell structures: The present disclosure includes memory cell structures and method of forming the same. One such memory cell includes a first electrode having sidewalls angled less than 90 degrees in relation to a bottom surface of the first electrode, a second electrode, including an electrode contact portion of the second electrode,... Agent: Micron Technology, Inc.

20130001505 - Multilayer structure comprising a phase change material layer and method of producing the same: A method of producing a multilayer structure is provided, wherein the method comprises forming a phase change material layer onto a substrate, forming a protective layer, forming a further layer on the protective layer, patterning the further layer in an first patterning step, patterning the protective layer and the phase... Agent: Nxp B.v.

20130001504 - Nonvolatile memory element and method for manufacturing the same: Provided is a nonvolatile memory element which inhibits deterioration of a oxygen concentration profile of a variable resistance layer due to a thermal budget and is able to stably operate at low voltages, and a method for manufacturing the nonvolatile memory element. A nonvolatile memory element (12) includes a first... Agent:

20130001502 - Phase-change memory device, flexible phase-change memory device using insulating nano-dot and manufacturing method for the same: Provided are a phase-change memory device using insulating nanoparticles, a flexible phase-change memory device and a method for manufacturing the same. The phase-change memory device includes an electrode, and a phase-change layer in which a phase change occurs depending on heat generated from the electrode, wherein insulating nanoparticles formed from... Agent:

20130001506 - Resistance change memory and method of manufacturing the same: According to one embodiment, a resistance change memory includes resistance change elements, vias and sidewall insulating layers, the elements and the vias provided alternately in a first direction and a second direction orthogonal to the first direction, and the sidewall insulating layers provided on sidewalls of the elements. The elements... Agent:

20130001507 - Semiconductor device and method: A semiconductor device and a method of manufacturing the device is disclosed. In one aspect, a method includes providing a substrate, providing a first epitaxial semiconducting layer on top of the substrate, and forming a one- or two-dimensional repetitive pattern, each part of the pattern having an aspect ratio in... Agent: Imec

20130001511 - Elevated led: The present invention relates to light emitting diodes comprising at least one nanowire. The LED according to the invention is an upstanding nanostructure with the nanowire protruding from a substrate. A bulb with a larger diameter than the nanowire is arranged in connection to the nanowire and at an elevated... Agent: Qunano Ab

20130001508 - Light emitting diode: An LED comprises a substrate, a buffer layer, an epitaxial layer and a conductive layer. The epitaxial layer comprises a first N-type epitaxial layer, a second N-type epitaxial layer, and a blocking layer with patterned grooves sandwiched between the first and second N-type epitaxial layers. The first and second N-type... Agent: Advanced Optoelectronic Technology, Inc.

20130001512 - Nitride group semiconductor light emitting device including multiquantum well structure: A nitride group semiconductor light emitting device includes a substrate, n-type and p-type semiconductor layers, and an active region. The n-type and p-type semiconductor layers are formed on or above the substrate. The active region is interposed between the n-type and p-type semiconductor layers. The active region includes barrier layers... Agent: Nichia Corporation

20130001513 - Nitride semiconductor element and manufacturing method therefor: A nitride-based semiconductor device includes: a semiconductor multilayer structure 20 including a p-type GaN-based semiconductor region whose surface 12 is inclined by an angle of not less than 1° and not more than 5° or the principal surface has a plurality of m-plane steps; and an electrode 30 that is... Agent: Panasonic Corporation

20130001509 - Nitride semiconductor light-emitting device and method for producing the same: A nitride semiconductor light-emitting device has a first conductive-type nitride semiconductor layer, a superlattice layer provided on the first conductive-type nitride semiconductor layer, an active layer provided on the superlattice layer, and a second conductive-type nitride semiconductor layer provided on the active layer. An average carrier concentration of the superlattice... Agent: Sharp Kabushiki Kaisha

20130001510 - Optoelectronic device having current blocking insulation layer for uniform temperature distribution and method of fabrication: An optoelectronic device includes a conductive base, a reflective conductive layer on the conductive base, a first semiconductor layer on the conductive layer configured as a first confinement layer, an active layer on the first semiconductor layer configured to emit electromagnetic radiation, a second semiconductor layer on the active layer... Agent: Semileds Optoelectronics Co., Ltd.

20130001514 - Method and apparatus for converting photon energy to electrical energy: In accordance with an example embodiment of the present invention, an apparatus including a nanopillar and a graphene film, the graphene film being in contact with a first end of the nanopillar, wherein the nanopillar includes a metal, the contact being configured to form an intrinsic field region in the... Agent: Nokia Corporation

20130001515 - Direct growth of graphene on substrates: Graphene layers can be formed on a dielectric substrate using a process that includes forming a copper thin film on a dielectric substrate; diffusing carbon atoms through the copper thin film; and forming a graphene layer at an interface between the copper thin film and the dielectric substrate.... Agent: Academia Sinica

20130001518 - Fabrication of graphene nanoelectronic devices on soi structures: A semiconductor-on-insulator structure and a method of forming the silicon-on-insulator structure including an integrated graphene layer are disclosed. In an embodiment, the method comprises processing a silicon material to form a buried oxide layer within the silicon material, a silicon substrate below the buried oxide, and a silicon-on-insulator layer on... Agent: International Business Machines Corporation

20130001517 - Generation of multiple diameter nanowire field effect transistors: A method of modifying a wafer having a semiconductor disposed on an insulator is provided and includes forming pairs of semiconductor pads connected via respective nanowire channels at each of first and second regions with different initial semiconductor thicknesses and reshaping the nanowire channels into nanowires to each have a... Agent: International Business Machines Corporation

20130001519 - Graphene devices with local dual gates: An electronic device comprises an insulator, a local first gate embedded in the insulator with a top surface of the first gate being substantially coplanar with a surface of the insulator, a first dielectric layer formed over the first gate and insulator, and a channel. The channel comprises a bilayer... Agent: International Business Machines Corporation

20130001516 - Graphite and/or graphene semiconductor devices: Various embodiments are provided for graphite and/or graphene based semiconductor devices. In one embodiment, a semiconductor device includes a semiconductor layer and a semimetal stack. In another embodiment, the semiconductor device includes a semiconductor layer and a zero gap semiconductor layer. The semimetal stack/zero gap semiconductor layer is formed on... Agent:

20130001521 - Application of triphenylene derivatives in organic electroluminescent devices: Triphenylene derivatives having a structure of formula (1) are provided. Ar represents an aromatic compound, n is 1 to 3, and each of R and R1 to R13 is a member independently selected from the group consisting of hydrogen, halo, cyano, trifluoromethyl, amino, C1-C10 alkyl, C2-C10 alkenyl, C2-C10 alkynyl, C3-C20... Agent: National Tsing Hua University

20130001540 - Compound including indole derivative in which two tertiary amines are substituted, organic electronic element using same, and terminal thereof: Disclosed are a compound including an indole derivative in which two tertiary amines are substituted, an organic electronic element using the same, and a terminal thereof.... Agent: Duksan High Metal Co., Ltd.

20130001539 - Electroactive materials: s

20130001524 - Heterocyclic compound and organic light-emitting device comprising the same: wherein R1 to R13 are each independently a hydrogen atom, a heavy hydrogen atom, a substituted or unsubstituted C1-C60 alkyl group, a substituted or unsubstituted C2-C60 alkenyl group, a substituted or unsubstituted C2-C60 alkynyl group, a substituted or unsubstituted C3-C60 cycloalkyl group, a substituted or unsubstituted C1-C60 alkoxy group, a... Agent: Samsung Mobile Display Co., Ltd.

20130001522 - Heterocyclic compound and organic light-emitting device including the same: e

20130001529 - Heterocyclic compound and organic light-emitting device including the same:

20130001527 - Heterocyclic compound, organic light-emitting diode including the heterocyclic compound, and flat display device including the organic light-emitting diode:

20130001535 - Light-emitting organic platinum complex, light-emitting material containing this complex and functional device: R is a substituent group for A and represents H (unless n of Z in the structural formula (1) is 7 to 13), a halogen, a C1-C6 alkyl group, a C1-C6 alkenyl group, a C1-C6 alkynyl group, a C1-C6 alkoxy group or the like.... Agent: Osaka University

20130001534 - Luminescent composition and light-emitting element using said composition: i

20130001536 - Novel benzoxazolyl carbazole compound and organic light-emitting device including the same: A novel organic compound which can be preferably used as a phosphorescent host material is provided. A benzoxazolyl carbazole compound represented by the general formula [1] shown in the specification is provided.... Agent: Canon Kabushiki Kaisha

20130001537 - Novel organic compound and organic light-emitting device having the same: n

20130001543 - Novel organic compound and organic light-emitting device having the same: Provided are a novel organic compound suitable for emitting green light and an organic light-emitting device including the compound. The organic compound is that shown in claim 1. The organic compound shown in claim 1 has substituents that are each independently selected from the group consisting of hydrogen atoms, halogen... Agent: Canon Kabushiki Kaisha

20130001541 - Organic electroluminescence device and method for producing the same: An organic electroluminescence device including an anode, a cathode, an organic layer disposed between the anode and the cathode, the organic layer containing a hole injection layer, a hole transport layer and an emission layer containing a host material, wherein the hole injection layer, the hole transport layer and the... Agent: Universal Display Corporation Ireland Limited (udi)

20130001532 - Organic light emitting diode: A full color organic light emitting diode having high efficiency and high color purity while having low manufacturing costs due to simple manufacturing processes.... Agent: Samsung Mobile Display Co., Ltd.

20130001526 - Organic light emitting diode and method for manufacturing the same: A highly efficient organic light emitting diode having simple manufacturing processes, and a method of manufacturing the same.... Agent: Samsung Mobile Display Co., Ltd.

20130001530 - Organic light emitting display devices and methods of manufacturing organic light emitting display devices: wherein, in the Chemical Formula (1), each of R1 to R4 independently represents hydrogen, deuterium, a substituted or unsubstituted C1-C50 alkyl group, a substituted or unsubstituted C3-C50 cycloalkyl group, a substituted or unsubstituted C1-C50 alkoxy group, a substituted or unsubstituted C5-C50 aryloxy group, a substituted or unsubstituted C5-C50 arylthio group,... Agent: Samsung Mobile Display Co., Ltd.

20130001533 - Organic light emitting display devices and methods of manufacturing organic light emitting display devices: An organic light emitting display device is provided. Thin film transistors may be located on a substrate. An insulating interlayer having a first contact hole to a third contact hole may be disposed on the substrate. First electrodes electrically connecting the thin film transistors may be located on the insulating... Agent: Samsung Mobile Display Co., Ltd.

20130001542 - Organic light-emitting device: An organic light-emitting device includes a light-emitting layer containing a dopant having the ability to trap electrons or holes, and a hole-blocking layer or electron-blocking layer, in which the difference between the LUMO of the dopant and the LUMO of a host material, the size relationship between the HOMO of... Agent: Canon Kabushiki Kaisha

20130001528 - Organic light-emitting diode: An organic light-emitting diode (OLED) having first, second and third sub-pixels of different colors includes: a substrate; first and second electrodes; an organic emission layer (OEL) between the electrodes including a first OEL in the first sub-pixel, a second OEL in the second sub-pixel, and a common third OEL in... Agent:

20130001523 - Organic light-emitting diode and flat display device including the same: An organic light-emitting diode includes: a substrate; a first electrode; a second electrode; an emission layer between the first electrode and the second electrode; and a hole blocking layer between the emission layer and the second electrode. The hole blocking layer includes a first layer including a first material and... Agent:

20130001531 - Organic light-emitting display apparatus: In one aspect, an organic light-emitting display apparatus is provided including a first sub-pixel, a second sub-pixel, and a third sub-pixel that are each a different color, the apparatus including: a substrate; a first electrode disposed on the substrate; a second electrode disposed on the first electrode so as to... Agent: Samsung Mobile Display Co., Ltd.

20130001520 - Photodetectors and photovoltaics based on semiconductor nanocrystals: A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including... Agent:

20130001525 - Thin film transistor and press sensing device using the same: A thin film transistor controlled by a pressure includes a source electrode, a drain electrode, a semiconductor layer, a gate electrode, and an insulative layer. The drain electrode is spaced from the source electrode. The semiconductor layer includes a polymer composite layer and is electrically connected with the source electrode... Agent: Tsinghua University

20130001538 - Triphenylene hosts in phosphorescent light emitting diodes: An organic emissive layer is provided. Also provided is a device in which the organic emissive layer is disposed between an anode and a cathode. The organic emissive layer includes a phosphorescent material and triphenylene compound or a compound having a repeat unit having a triphenylene moiety. The triphenylene is... Agent: Universal Display Corporation

20130001546 - Display device and method for producing array substrate for display device: A display device includes: a plurality of stripe-shaped data electrodes that are formed on a first substrate and that extend in the column direction; a plurality of scanning lines and a plurality of reference signal lines that are formed on a second substrate and that extend in the row direction;... Agent:

20130001544 - Semiconductor device and method for manufacturing the same: A more convenient and highly reliable semiconductor device which has a transistor including an oxide semiconductor with higher impact resistance used for a variety of applications is provided. A semiconductor device has a bottom-gate transistor including a gate electrode layer, a gate insulating layer, and an oxide semiconductor layer over... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130001545 - Semiconductor device and method for manufacturing the same: An object is to increase field effect mobility of a thin film transistor including an oxide semiconductor. Another object is to stabilize electrical characteristics of the thin film transistor. In a thin film transistor including an oxide semiconductor layer, a semiconductor layer or a conductive layer having higher electrical conductivity... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130001550 - Hermetically sealed mems device with a portion exposed to the environment with vertically integrated electronics: A system and method for providing a MEMS device with integrated electronics are disclosed. The MEMS device comprises an integrated circuit substrate and a MEMS subassembly coupled to the integrated circuit substrate. The integrated circuit substrate includes at least one circuit coupled to at least one fixed electrode. The MEMS... Agent: Invensense, Inc.

20130001547 - Method for verifying the alignment between integrated electronic devices: A method includes communicatively coupling first and second integrated electronic devices together through a plurality of reference capacitors, transmitting a plurality of transmission reference signals on transmission reference electrodes of the plurality of reference capacitors, receiving coupling signals on reception reference electrodes of the plurality of reference capacitors, amplifying said... Agent: Stmicroelectronics S.r.l.

20130001549 - Method of manufacturing semiconductor device and semiconductor device: In a method of manufacturing of a semiconductor device according to an embodiment, an inspection transistor is subjected to silicidation and subsequently a characteristic of the inspection transistor is measured after the inspection transistor and a product transistor on a substrate are subjected to an annealing process. Thereafter, based on... Agent: Kabushiki Kaisha Toshiba

20130001551 - Probe resistance measurement method and semiconductor device with pads for probe resistance measurement: A probe resistance measuring method includes measuring first resistances at three or more nodes by making contact at least a part of a plurality of probes of a probe unit with three or more pads for resistance measurement based on a first correspondence relation. The measured resistances are stored as... Agent: Renesas Electronics Corporation

20130001548 - Semiconductor apparatus and stacked semiconductor apparatus: A semiconductor apparatus includes a TSV formed to be electrically connected with another chip and a TSV test unit configured to check a capacitance component of the TSV to generate a TSV abnormality signal.... Agent: Hynix Semiconductor Inc.

20130001552 - Test pad structure for reuse of interconnect level masks: A test pad structure in a back-end-of-line metal interconnect structure is formed by repeated use of the same mask set, which includes a first line level mask, a first via level mask, a second line level mask, and a second via level mask. The test pad structure includes a two-dimensional... Agent: International Business Machines Corporation

20130001553 - Semiconductor devices having reduced substrate damage and associated methods: Optoelectronic devices, materials, and associated methods having increased operating performance are provided. In one aspect, for example, an optoelectronic device can include a semiconductor material, a first doped region in the semiconductor material, a second doped region in the semiconductor material forming a junction with the first doped region, and... Agent: Sionyx, Inc.

20130001554 - Method of manufacturing electric device, array of electric devices, and manufacturing method therefor: An example embodiment relates to a method of manufacturing an array of electric devices that includes attaching a platform including a micro-channel structure to a substrate. The method includes injecting first and second solutions into the micro-channel structure to form at least three liquid film columns, where the first and... Agent: Samsung Electronics Co., Ltd.

20130001555 - Semiconductor structure and method for manufacturing the same: The present invention provides a method for manufacturing a semiconductor structure, comprising the steps of: depositing an interlayer dielectric layer (105) on a semiconductor substrate (101) to cover a source/drain region (102) and a gate stack on the semiconductor substrate (101); etching the interlayer dielectric layer and the source/drain region,... Agent:

20130001556 - Thin film transistor and press sensing device using the same: A thin film transistor and a press sensing device using the thin film transistor are disclosed. The thin film transistor, comprises a source electrode; a drain electrode spaced from the source electrode; a semiconductor layer electrically connected with the source electrode and the drain electrode, a channel defined in the... Agent: Tsinghua University

20130001558 - Semiconductor device and manufacturing method of semiconductor device: A semiconductor device includes a gate electrode, a gate insulating film provided so as to cover one surface of the gate electrode, an oxide semiconductor provided so as to overlap the gate insulating film, and a source electrode and a drain electrode, which are provided so as to overlap the... Agent: Hitachi Displays, Ltd.

20130001557 - Semiconductor device and manufacturing method thereof: The invention relates to a semiconductor device including an oxide semiconductor layer, a gate electrode overlapping with a channel formation region of the oxide semiconductor layer, and a source electrode or a drain electrode overlapping with a first region of the oxide semiconductor layer, and a second region between the... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130001561 - Semiconductor device and method of manufacturing same: A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gate electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low concentration impurity region that does not... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130001560 - Substrate having film pattern and manufacturing method of the same, manufacturing method of semiconductor device, liquid crystal television, and el television: The invention provides a manufacturing method of a substrate having a film pattern including an insulating film, a semiconductor film, a conductive film and the like by simple steps, and also a manufacturing method of a semiconductor device which is low in cost with high throughput and yield. According to... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130001559 - Thin-film transistor and method for manufacturing thin-film transistor: A substrate; a gate electrode formed above the substrate; a gate insulating film formed above the gate electrode; a crystalline silicon semiconductor layer formed above the gate insulating film; an amorphous silicon semiconductor layer formed above the crystalline silicon semiconductor layer; an organic protective film made of an organic material... Agent: Panasonic Corporation

20130001566 - Back plane for use in flat panel displays and method of manufacturing the back plane: In one aspect, a back plane for use in flat panel displays is provided. The back plane may include a substrate; an auxiliary layer; a source electrode and a drain electrode; an active layer; a first insulation layer; a gate electrode; and a second insulation layer.... Agent: Samsung Mobile Display Co., Ltd

20130001569 - Display apparatus: A capacitance setting line is disposed at the top end of a pixel, a light emission setting line is disposed at the bottom end of the pixel, and a gate line is disposed at the center between both the lines. A selection transistor, a potential control transistor and a capacitor... Agent: Sanyo Electric Co., Ltd.

20130001571 - Display device and method for manufacturing the same: The present invention provides a method for manufacturing a highly reliable display device at a low cost with high yield. According to the present invention, a step due to an opening in a contact is covered with an insulating layer to reduce the step, and is processed into a gentle... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130001572 - Display device, thin-film transistor used for display device, and method of manufacturing thin-film transistors: A thin-film transistor used for a display device includes a gate electrode formed on an insulating substrate; a gate insulating film formed on the substrate so as to cover the gate electrode; a semiconductor layer composed of first semiconductor layer and second semiconductor layer formed on the gate insulating film;... Agent: Panasonic Corporation

20130001565 - Display devices and methods of manufacturing display devices: A display device includes a gate line, a switching device, a first electrode, an organic light emitting structure and a second electrode. The gate line may include a first conductive layer pattern and a second conductive layer pattern. The first conductive layer pattern may extend along a first direction and... Agent:

20130001562 - Organic light emitting display apparatus and method of manufacturing the same: An organic light emitting display apparatus includes a substrate, a thin film transistor formed on the substrate and comprising an active layer, a gate electrode, a source electrode, and a drain electrode, a first gate insulation layer arranged between the gate electrode and the active layer and including an opening... Agent:

20130001563 - Organic light-emitting display device and method of manufacturing the same: An OLED device includes a thin film transistor including an active layer, a gate bottom electrode, a gate top electrode, an insulating layer covering the gate electrode, and a source electrode and a drain electrode on the insulating layer contacting the active layer; an organic light-emitting device electrically connected to... Agent:

20130001564 - Organic light-emitting display device and method of manufacturing the same: An organic light-emitting display device including a TFT comprising an active layer, a gate electrode comprising a lower gate electrode and an upper gate electrode, and source and drain electrodes insulated from the gate electrode and contacting the active layer; an organic light-emitting device electrically connected to the TFT and... Agent:

20130001570 - Pixel structure: A pixel structure disposed on a substrate having an array of pixel areas is provided. A common electrode is disposed on the substrate to surround each of the pixel areas. A capacitance storage electrode is disposed on the common electrode. A first passivation layer covers the capacitance storage electrode and... Agent: Chunghwa Picture Tubes, Ltd.

20130001568 - Semiconductor device and fabrication method thereof: This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 707 overlapping with a gate wiring is arranged in an n-channel TFT 802 forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions 717, 718, 719... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130001567 - Thin film transistor substrate and manufacturing method thereof: A thin film transistor array panel according to an exemplary embodiment of the present invention comprises a substrate, a gate line formed on the substrate, a gate insulating layer formed on the gate line, a semiconductor layer formed on the gate insulating layer, and a data line formed on the... Agent:

20130001573 - Thin film transistor and method of manufacturing the same: A thin film transistor including a gate electrode, a semiconductor layer, a gate insulating layer, a source electrode, a drain electrode and a graphene pattern. The semiconductor layer overlaps with the gate electrode. The gate insulating layer is disposed between the gate electrode and the semiconductor layer. The source electrode... Agent: Samsung Electronics Co., Ltd.

20130001574 - Field transistor structure manufactured using gate last process: According to embodiments of the invention, a field transistor structure is provided. The field transistor structure includes a semiconductor substrate, a metal gate, a polycrystalline silicon (polysilicon) layer, and first and second metal portions. The polysilicon layer has first, second, third, and fourth sides and is disposed between the semiconductor... Agent: Broadcom Corporation

20130001575 - Methods for stressing transistor channels of a semiconductor device structure, and a related semiconductor device structure: The present invention includes methods for stressing transistor channels of semiconductor device structures. Such methods include the formation of so-called near-surface “nanocavities” adjacent to the source/drain regions, forming extensions of the source/drain regions adjacent to and including the nanocavities, and implanting matter of a type that will expand or contract... Agent: Micron Technology, Inc.

20130001576 - Semiconductor device including metal silicide layer and method for manufacturing the same: A device formed from a method of fabricating a fine metal silicide layer having a uniform thickness regardless of substrate doping. A planar vacancy is created by the separation of an amorphousized surface layer of a silicon substrate from an insulating layer, a metal source enters the vacancy through a... Agent:

20130001577 - Backplane for flat panel display apparatus, flat panel display apparatus including the same, and method of manufacturing backplane for flat panel display apparatus: In one aspect, a back plane for a flat panel display apparatus include: a substrate; a source electrode and a drain electrode formed on the substrate; a capacitor bottom electrode formed on a same layer as the source/drain electrodes; an active layer formed on the substrate in correspondence to the... Agent: Samsung Mobile Display Co., Ltd.

20130001578 - Light-emitting device and organic light emitting display apparatus including the same: A light emitting device includes: a substrate; a first electrode on the substrate, the first electrode including a light-transmissive material having a refractive index greater than a refractive index of the substrate; a refraction conversion layer between the substrate and the first electrode, the refraction conversion layer including a first... Agent:

20130001581 - Active matrix liquid crystal display device: A first insulating thin film having a large dielectric constant such as a silicon nitride film is formed so as to cover a source line and a metal wiring that is in the same layer as the source line. A second insulating film that is high in flatness is formed... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130001579 - Array substrate for fringe field switching mode liquid crystal display and method of manufacturing the same: A method of manufacturing an array substrate for a fringe field switching mode liquid crystal display includes: forming an auxiliary insulating layer having a first thickness; forming first and second photoresist patterns on the auxiliary insulating layer; performing an ashing to remove the second photoresist pattern and expose the auxiliary... Agent: Lg Display Co., Ltd.

20130001582 - Semiconductor device and a method of manufacturing the same: A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained.... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130001583 - Semiconductor device and fabrication method thereof: This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 707 overlapping with a gate wiring is arranged in an n-channel TFT 802 forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions 717, 718, 719... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130001580 - Thin film transistor and organic light emitting diode display using the same and method for manufacturing the same: A thin film transistor includes an active layer on a substrate and crystallized through growth of crystals due to an action of metal catalysts, a gate insulating layer pattern on a part of the active layer; a gate electrode on a part of the gate insulating layer pattern; an anti-etching... Agent:

20130001585 - Gallium nitride rectifying device: A gallium nitride rectifying device includes a p-type gallium nitride based semiconductor layer and an n-type gallium nitride based semiconductor layer, the two layers forming a pn junction with each other. The p-type gallium nitride based semiconductor layer has a carrier trap (level) density of not more than 1×1018 cm−3,... Agent: Hitachi Cable, Ltd.

20130001587 - High electron mobility transistors and methods of manufacturing the same: High electron mobility transistors (HEMTs) including a cavity below a drain and methods of manufacturing HEMTS including removing a portion of a substrate below a drain.... Agent: Samsung Electronics Co., Ltd.

20130001589 - Lateral extended drain metal oxide semiconductor field effect transistor (ledmosfet) with tapered dielectric plates to achieve a high drain-to-body breakdown voltage, a method of forming the transistor and a program storage device for designing the transi: A lateral, extended drain, metal oxide semiconductor, field effect transistor (LEDMOSFET) with a high drain-to-body breakdown voltage (Vb) incorporates gate structure extensions on opposing sides of a drain drift region. The extensions are tapered such that a distance between each extension and the drift region increases linearly from one end... Agent: International Business Machines Corporation

20130001590 - Light emitting diodes and methods for manufacturing light emitting diodes: Light emitting diodes and methods for manufacturing light emitting diodes are disclosed herein. In one embodiment, a method for manufacturing a light emitting diode (LED) comprises applying a first light conversion material to a first region on the LED and applying a second light conversion material to a second, different... Agent: Micron Technology, Inc.

20130001584 - Semiconductor light emitting device: According to one embodiment, a semiconductor light emitting device includes a stacked structure unit, a transparent, p-side and n-side electrodes. The unit includes n-type semiconductor layer, a light emitting portion provided on a part of the n-type semiconductor layer and p-type semiconductor layer provided on the light emitting portion. The... Agent: Kabushiki Kaisha Toshiba

20130001588 - Semiconductor light emitting device: A semiconductor device composed of a Group III nitride semiconductor has the following structure. A substrate has on it an n-type first semiconductor layer, an active layer, and a p-type second semiconductor layer in this order. Two first end faces are formed by cleavage and oppose each other in planar... Agent: Renesas Electronics Corporation

20130001586 - Semiconductor substrate and method of manufacturing: A method for forming a substrate includes forming a base layer comprising a Group III-V material on a substrate, cooling the base layer and inducing cracks in the base layer, and forming a bulk layer comprising a Group III-V material on the base layer after cooling.... Agent: Saint-gobain Ceramics & Plastics, Inc.

20130001591 - Finfet design and method of fabricating same: An integrated circuit device and method for manufacturing the same are disclosed. An exemplary device includes a semiconductor substrate having a substrate surface and a trench isolation structure disposed in the semiconductor substrate for isolating an NMOS region of the device and from a PMOS region of the device. The... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130001593 - Semiconductor device structures including transistors with energy barriers adjacent to transistor channels and associated methods: A semiconductor device structure includes a transistor with an energy barrier beneath its transistor channel. The energy barrier prevents leakage of stored charge from the transistor channel into a bulk substrate. Methods for fabricating semiconductor devices that include energy barriers are also disclosed.... Agent: Micron Technology, Inc.

20130001592 - Silicon carbide semiconductor device: In a silicon carbide semiconductor device, a plurality of trenches has a longitudinal direction in one direction and is arranged in a stripe pattern. Each of the trenches has first and second sidewalls extending in the longitudinal direction. The first sidewall is at a first acute angle to one of... Agent: Denso Corporation

20130001594 - Electronic device: A method of making an electronic device comprising a double bank well-defining structure, which method comprises: providing an electronic substrate; depositing a first insulating material on the substrate to form a first insulating layer; depositing a second insulating material on the first insulating layer to form a second insulating layer;... Agent: Cambridge Display Technology Limited

20130001595 - Method of manufacturing an oled device with spatially isolated light-emitting areas: The invention describes a method of forming spatially isolated light- emitting areas (R1, R2, R3) on a common substrate (11) of an OLED device (1) comprising a plurality of device layers (12, 15, 16), which device layers (12, 15, 16) comprise an active layer (15) enclosed between a first electrode... Agent: Koninklijke Philips Electronics, N.v.

20130001596 - Deposition of esd protection on printed circuit boards: A method and apparatus for providing electro-static discharge (ESD) protection to light emitting diode (LED) systems on printed circuit boards (PCBs). Protection is provided by ESD diodes deposited on the PCBs configured as flexible substrates. Various deposition techniques are employed including chemical vapor deposition, pulsed laser deposition and atomic layer... Agent: Osram Sylvania Inc.

20130001604 - Light emitting device: There is a reflective layer covering almost the entire surface of the light emitting portion except the portions where the light emitting elements are arranged, it is possible to increase the reflectivity of the light emitting portion to realize a higher luminance. In addition, the heat generated from the light... Agent: Toyoda Gosei Co., Ltd.

20130001608 - Light emitting device: It is an object of the present invention to prevent an insulating film from peeling in a section where the insulating film is adjacent to a sealing region. Over a first substrate 104, a pixel portion 100 provided with a light emitting element, a source driver 101, a gate driver... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130001599 - Light emitting device package and light unit including the same: An LED package includes a body; a first lead frame having a first cavity in the body; a second lead frame having a second cavity in the body; a first bonding part protruding into a region between a first lateral side of the body and the first cavity from the... Agent: Lg Innotek, Co., Ltd.

20130001605 - Light-emitting device: A light-emitting device includes a circuit substrate including at least a pair of electrodes, an LED element electrically mounted on the circuit substrate, a phosphor plate disposed on an upper surface of the LED element, a diffuser plate disposed on an upper surface of the phosphor plate, and a white... Agent: Citizen Electronics Co., Ltd.

20130001607 - Light-emitting device and production method thereof: Light-emitting device including a supporting substrate, a partition wall dividing a plurality of EL elements on the supporting substrate, and the EL elements provided in a concave portion that is a space between the partition walls. Each EL element is constituted by a first electrode, a first resistance layer formed... Agent: Sumitomo Chemical Company, Limited

20130001597 - Lighting device having a color tunable wavelength converter: There is herein described a lighting device including at least one LED and a wavelength converter. The wavelength converter includes a supporting plate, a plurality of first host sites and a plurality of second host site. The supporting plate is disposed over the LED. The plurality of the first host... Agent: Osram Sylvania Inc.

20130001598 - Method and device for a cathode structure for flexible organic light emitting diode (oled) device: A method for making a flexible OLED lighting device includes forming a plurality of OLED elements on a flexible planar substrate, wherein at least one of the OLED elements includes a continuous respective anode layer formed over the substrate, one or more organic light emitting materials formed over the anode... Agent:

20130001603 - Methods of forming inclined structures on insulation layers, organic light emitting display devices and methods of manufacturing organic light emitting display devices: An organic light emitting display device comprises a first substrate, an insulation layer having an inclined structure, a first electrode, a pixel defining layer defining a luminescent region and a non-luminescent region, an organic light emitting structure, a second electrode and a second substrate. Lateral portions of the first electrode,... Agent:

20130001602 - Organic light emitting device, organic light emitting display apparatus, and methods of manufacturing the same: An organic light emitting display device includes a buffer layer on a substrate, the buffer layer including nano-particles, a pixel electrode on the buffer layer, an opposite electrode on the pixel electrode and facing the pixel electrode, and an organic emission layer between the pixel electrode and the opposite electrode.... Agent:

20130001601 - Organic light emitting display device and method of manufacturing organic light emitting display device: An organic light emitting display device includes a substrate having a luminescent region and a non-luminescent region, an insulation layer on the substrate, a first electrode on the insulation layer, at least one light emitting structure on the first electrode, a second electrode on the light emitting structure, and at... Agent:

20130001600 - Organic light-emitting display apparatus: An organic light-emitting display apparatus includes an organic light-emitting device including a pixel electrode, an opposite electrode facing the pixel electrode, and an organic light-emitting layer interposed between the pixel electrode and the opposite electrode; a first polarization plate disposed on a surface of the organic light-emitting device, the organic... Agent:

20130001606 - Sub-mount, light emitting device including sub-mount and methods of manufacturing such sub-mount and/or light emitting device: A sub-mount adapted for AC and DC operation of devices mountable thereon, light emitting devices including such a sub-mount, and methods of manufacturing such a sub-mount are provided. The sub-mount includes a base substrate having first and second surfaces, a conductive pattern on the first surface, first and second pairs... Agent:

20130001609 - Display apparatus: In a display apparatus including an organic EL element utilizing the optical interference effect, and a lens, a diameter of the lens is set such that, of light radiated from the organic EL element into a protective layer, light radiated at a larger angle than an angle, at which a... Agent: Canon Kabushiki Kaisha

20130001610 - Display apparatus:

20130001621 - Chip package and method for forming the same: An embodiment of the invention provides a chip package which includes: a substrate having a first surface and a second surface; an optoelectronic device formed in the substrate; a conducting layer disposed on the substrate, wherein the conducting layer is electrically connected to the optoelectronic device; an insulating layer disposed... Agent:

20130001617 - Light emitting device: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a reflective layer, a second conductive type semiconductor layer on the reflective layer, an active layer on the second conductive type semiconductor layer, a first conductive type semiconductor layer on... Agent:

20130001626 - Light emitting device: The luminance of different colors of light emitted from EL elements in a pixel portion of a light emitting device is equalized and the luminance of light emitted from the EL elements is raised. The pixel portion of the light emitting device has EL elements whose EL layers contain triplet... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130001627 - Light emitting device: According to one embodiment, a light emitting device includes first and second plate electrodes, a light emitting element and an insulator. The first plate electrode includes first and second major surfaces. The second plate electrode includes third and fourth major surfaces. The light emitting element is placed between the first... Agent: Harison Toshiba Lighting Corp.

20130001615 - Light emitting device and lighting system with the same: Embodiments provide a light emitting device including a light emitting structure having a first conduction type semiconductor layer, an active layer, and a second conduction type semiconductor layer, a metal filter of an irregular pattern on the light emitting structure, and openings between the irregular patterns in the metal filter.... Agent:

20130001625 - Light emitting device having light extraction structure and method for manufacturing the same: A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or... Agent:

20130001616 - Light emitting device, light emitting device package including the same and lighting system: Disclosed is a light emitting device including a light emitting structure comprising a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer, a first electrode disposed on the first conductive type semiconductor layer, a second electrode disposed on the second conductivity type semiconductor layer,... Agent:

20130001613 - Light emitting diode package and method for making the same: A light emitting diode package includes a substrate with a first metal layer, a second metal layer and an insulating layer between the first metal layer and the second metal layer. A cavity is defined in the insulating layer and the second metal layer. The second metal layer surrounding the... Agent: Advanced Optoelectronic Technology, Inc.

20130001612 - Light emitting structure, display device including a light emitting structure and method of manufacturing a display device including a light emitting structure: A light emitting structure includes a first hole injection layer, a first organic light emitting layer, a charge generation layer, a second hole injection layer, a second organic light emitting layer, an electron transfer layer, and a blocking member. The light emitting structure has first, second, and third sub-pixel regions.... Agent:

20130001623 - Light-emitting apparatus and manufacturing method thereof: A light-emitting apparatus includes a substrate, at least one light emitting diode (LED) die, a sealant align layer, and a first sealant. The substrate has a die disposing area. The LED die is disposed on the die disposing area. The sealant align layer is disposed on the substrate. The first... Agent: Gio Optoelectronics Corp.

20130001624 - Light-emitting device: A light-emitting device includes a semiconductor light-emitting stack; a current injected portion formed on the semiconductor light-emitting stack; an extension portion having a first branch radiating from the current injected portion and having a first width, and a first length greater than the first width, and a second branch extending... Agent:

20130001620 - Light-emitting device, electronic device, and lighting device: A high-quality light-emitting device having low power consumption, capability of emitting light of a bright color, and less luminance unevenness is provided. Provided is a light-emitting device in which a plurality of light-emitting units each include a light-emitting element which includes a layer (EL layer) containing an organic compound between... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130001614 - Light-emitting diode device and method for fabricating the same: A light-emitting diode device includes: a substrate including first and second conductors; a light-emitting diode die including first and second polarity sides, and a surrounding surface formed between the first and second polarity sides; an insulator disposed around the surrounding surface; a transparent conductive layer extending from the second polarity... Agent: Aceplux Optotech Inc.

20130001618 - Light-emitting element mounting substrate and led package: A light-emitting element mounting substrate includes an insulative substrate including a single-sided printed circuit board, a pair of wiring patterns formed on one surface of the substrate, the wiring patterns being separated with a first distance, a pair of through-holes penetrating through the substrate in a thickness direction, the through-holes... Agent: Hitachi Cable, Ltd.

20130001611 - Semiconductor light-emitting device and method of manufacturing the same: A light-emitting device includes a light emitting structure comprising a lower layer of the first conductivity type, an active layer, an upper layer of the second conductivity type, a first electrode connected to the lower layer of the first conductivity type, a second electrode connected to the upper layer of... Agent:

20130001622 - Substrate for mounting optical semiconductor element and manufacturing method thereof, optical semiconductor device and manufacturing method for thereof: A substrate for mounting optical semiconductor elements is provided, including a base substrate having an insulating layer and a plurality of wiring circuits formed on the upper face of the insulating layer, and having at least one external connection terminal formation opening portion which penetrates the insulating layer and reaches... Agent:

20130001619 - Wavelength conversion particle, wavelength conversion member using same, and light emitting device: A wavelength conversion particle 7 used for a wavelength conversion member 70 is provided with a moth-eye structure section 74 having a fine concavo-convex structure in the side of a surface of a fluorescent particle 71, and the fine concavo-convex structure is formed in fluorescent particle 71 itself. Wavelength conversion... Agent: Panasonic Corporation

20130001628 - White light emitting lamp and white led lighting apparatus including the same: An object is to provide a white light emitting lamp 1 comprising: a semiconductor light emitting element 2 which is placed on a board 3 and emits ultraviolet light or blue light; and a light emitting portion that is formed so as to cover a light emitting surface of the... Agent: Toshiba Materials Co., Ltd.

20130001629 - Led and method for manufacturing the same: An LED (light emitting diode) includes a base, a pair of leads fixed on the base, a housing secured on the leads, a chip mounted on one lead and an encapsulant sealing the chip. The housing defines a cavity to receive the chip. The cavity includes an upper chamber and... Agent: Advanced Optoelectronic Technology, Inc.

20130001630 - Light-emitting diode structure: A light-emitting diode structure includes first and second conductors, and a light-emitting diode unit. The light-emitting diode unit includes: a light-emitting diode die including first and second polarity sides, and a surrounding surface, the first polarity side being electrically connected to the first conductor; an insulator disposed around the surrounding... Agent: Aceplux Optotech Inc.

20130001633 - Light-emitting element mounting substrate and led package: A light-emitting element mounting substrate includes an insulative substrate including a single-sided printed circuit board, a pair of wiring patterns formed on one surface of the substrate, the wiring patterns being separated with a first distance, a pair of filled portions including a metal filled in a pair of through-holes... Agent: Hitachi Cable, Ltd.

20130001632 - Light-emitting element mounting substrate, led package and method of manufacturing the led package: A light-emitting element mounting substrate includes an insulative substrate, a pair of wiring patterns formed on one surface of the substrate, and a pair of filled portions including a metal filled in a pair of through-holes to contact the pair of wiring patterns and to be exposed on a surface... Agent: Hitachi Cable, Ltd.

20130001635 - Lighting device: An object of the invention is to provide a lighting device which can suppress luminance nonuniformity in a light emitting region when the lighting device has large area. A layer including a light emitting material is formed between a first electrode and a second electrode, and a third electrode is... Agent: Semiconductor Energy Laboratory Co., Ltd.

20130001634 - Nitride semiconductor light emitting device and method of manufacturing the same: A nitride semiconductor light emitting device includes a conductive substrate, a first metal layer, a second conductivity-type semiconductor layer, an emission layer, and a first conductivity-type semiconductor layer in this order. The nitride semiconductor light emitting device additionally has an insulating layer covering at least side surfaces of the second... Agent: Sharp Kabushiki Kaisha

20130001631 - Organic light-emitting display device and method of manufacturing the same: An organic light-emitting display device and a method of manufacturing the same. The organic light-emitting display device has a structure including an organic layer between a pixel electrode and an opposite electrode, the organic layer including a emissive layer and an insulating layer defining a light emission area. Accordingly, the... Agent:

20130001636 - Light-emitting diode and method for forming the same: A light-emitting diode includes: an epitaxial substrate; a light-emitting unit including a lower semiconductor layer, and at least two epitaxial units that are separately formed on the lower semiconductor layer, the epitaxial units cooperating with the lower semiconductor layer to define two light-emitting sources that are capable of emitting different... Agent: Aceplux Optotech Inc.

20130001637 - Nitride semiconductor light-emitting device: A nitride semiconductor light-emitting device has an n-type nitride semiconductor layer, a lower light-emitting layer, an upper light-emitting layer, and a p-type nitride semiconductor layer in this order. The lower light-emitting layer is formed by alternately stacking a plurality of lower well layers, and a lower barrier layer sandwiched between... Agent: Sharp Kabushiki Kaisha

20130001638 - Semiconductor device: Plural gate trenches are formed in the surface of an n-type drift region. A gate electrode is formed across a gate oxide film on the inner walls of the gate trenches. P-type base regions are selectively formed so as to neighbor each other in the gate trench longitudinal direction between... Agent: Fuji Electric Co., Ltd.

20130001639 - Semiconductor device comprising semiconductor substrate having diode region and igbt region: A semiconductor device includes a semiconductor substrate in which a diode region and an IGBT region are formed, wherein a lower surface side of the semiconductor substrate comprises a low impurity region provided between a second conductivity type cathode region of the diode region and a first conductivity type collector... Agent: Toyota Jidosha Kabushiki Kaisha

20130001640 - Semiconductor device having a floating semiconductor zone: A semiconductor device includes a first trench and a second trench extending into a semiconductor body from a surface. A body region of a first conductivity type adjoins a first sidewall of the first trench and a first sidewall of the second trench, the body region including a channel portion... Agent: Infineon Technologies Austria Ag

20130001641 - Defect mitigation structures for semiconductor devices: A method and a semiconductor device for incorporating defect mitigation structures are provided. The semiconductor device comprises a substrate, a defect mitigation structure comprising a combination of layers of doped or undoped group IV alloys and metal or non-metal nitrides disposed over the substrate, and a device active layer disposed... Agent: Silexos Inc.

20130001642 - Method including producing a monocrystalline layer: A method including producing a monocrystalline layer is disclosed. A first lattice constant on a monocrystalline substrate has a second lattice constant at least in a near-surface region. The second lattice constant is different from the first lattice constant. Lattice matching atoms are implanted into the near-surface region. The near-surface... Agent: Infineon Technologies Austria Ag

20130001643 - Method of manufacturing photodiode with waveguide structure and photodiode: A process to form a photodiode (PD) with the waveguide structure is disclosed. The PD processes thereby reduces a scattering of the parasitic resistance thereof. The process includes steps to form a PD mesa stripe, to bury the PD mesa stripe by the waveguide region, to etch the PD mesa... Agent: Sumitomo Electric Industries, Ltd.

20130001644 - Nitride semiconductor epitaxial substrate and nitride semiconductor device: There is provided a nitride semiconductor epitaxial substrate having a group III nitride semiconductor layer with C-plane as a surface, grown on a substrate via a buffer layer of the group III nitride semiconductor containing Al, wherein the buffer layer has an inversion domain on the surface.... Agent: Hitachi Cable, Ltd.

20130001645 - Semiconductor epitaxial substrate: Provided is a semiconductor epitaxial substrate which has low semiconductor layer mosaicity and is suitable for the production of a semiconductor device. Specifically provided is a semiconductor epitaxial substrate formed by epitaxially growing a graded buffer layer which is compositionally graded such that the lattice constant increases in stages within... Agent:

20130001646 - Algan/gan hybrid mos-hfet: A field effect transistor (FET) includes source and drain electrodes, a channel layer, a barrier layer over the channel layer, a passivation layer covering the barrier layer for passivating the barrier layer, a gate electrode extending through the barrier layer and the passivation layer, and a gate dielectric surrounding a... Agent: Hrl Laboratories, LLC

20130001647 - Integration of vertical bjt or hbt into soi technology: In an embodiment, a bipolar transistor structure is formed on a silicon-on-insulator (SOI) structure that includes a semiconductor substrate, a buried oxide layer formed on the semiconductor substrate and a top silicon layer formed on the buried oxide layer. The bipolar transistor structure includes: an opening formed in the top... Agent:

20130001648 - Gated algan/gan schottky device: Some exemplary embodiments of a semiconductor device using a III-nitride heterojunction and a novel Schottky structure and related method resulting in such a semiconductor device, suitable for high voltage circuit designs, have been disclosed. One exemplary structure comprises a first layer comprising a first III-nitride material, a second layer comprising... Agent: International Rectifier Corporation

20130001649 - Semiconductor device employing circuit blocks having the same characteristics: A semiconductor device is disclosed, which comprises First and second inputs ports, first and second output nodes, and first and second transistors. The first transistor includes first and second diffusion regions defining a first channel region and a first gate electrode and connected to the first input port, the first... Agent: Elpida Memory, Inc.

20130001651 - Semiconductor light detecting element: A semiconductor light detecting element is provided with a silicon substrate having a semiconductor layer, and an epitaxial semiconductor layer grown on the semiconductor layer and having a lower impurity concentration than the semiconductor layer; and conductors provided on a surface of the epitaxial semiconductor layer. A photosensitive region is... Agent: Hamamatsu Photonics K.k.

20130001650 - Solid-state imaging device: The present invention provides a solid-state imaging device in which high S/N is achieved. A solid-state imaging device includes a photodiode, a transfer transistor, a floating diffusion, a floating diffusion wiring, an amplifying transistor, a power line, and first output signal lines, in which the first output signal lines are... Agent: Panasonic Corporation

20130001652 - Magnetoresistive element and method of manufacturing the same: According to one embodiment, a magnetoresistive element includes a storage layer having a variable and perpendicular magnetization, a tunnel barrier layer on the storage layer, a reference layer having an invariable and perpendicular magnetization on the tunnel barrier layer, a hard mask layer on the reference layer, and a sidewall... Agent:

20130001653 - Chemically-sensitive field effect transistor based pixel array with protection diodes: Methods and apparatus relating to FET arrays for monitoring chemical and/or biological reactions such as nucleic acid sequencing-by-synthesis reactions. Some methods provided herein relate to improving signal (and also signal to noise ratio) from released hydrogen ions during nucleic acid sequencing reactions.... Agent: Life Technologies Corporation

20130001655 - Heat dissipation structure of soi field effect transistor: The present invention discloses a heat dissipation structure for a SOI field effect transistor having a schottky source/drain, which relates to a field of microelectronics. The heat dissipation structure includes two holes connected with a drain terminal or with both a source terminal and a drain terminal, which are filled... Agent:

20130001654 - Mask-based silicidation for feol defectivity reduction and yield boost: A semiconductor device with reduced defect density is fabricated by forming localized metal silicides instead of full area silicidation. Embodiments include forming a transistor having a gate electrode and source/drain regions on a substrate, forming a masking layer with openings exposing portions of both the gate electrode and source/drain regions... Agent: Globalfoundries Inc.

20130001656 - Vertically pinched junction field effect transistor: A vertical junction field-effect transistor in a CMOS base-technology. The vertical junction field-effect transistor includes a semiconductor substrate having a source region and a drain region, a main-channel region formed between the source region and the drain region, a well region formed on the main-channel region between the source region... Agent:

20130001658 - Corner transistor and method of fabricating the same: A method of fabricating a corner transistor is described. An isolation structure is formed in a substrate to define an active region. A treating process is performed to make the substrate in the active region have sharp corners at top edges thereof. The substrate in the active region is covered... Agent: Nanya Technology Corporation

20130001660 - Planar field effect transistor structure and method: Disclosed is a transistor that incorporates epitaxially deposited source/drain semiconductor films and a method for forming the transistor. A crystallographic etch is used to form recesses between a channel region and trench isolation regions in a silicon substrate. Each recess has a first side, having a first profile, adjacent to... Agent: International Business Machines Corporation

20130001657 - Self-aligned iii-v mosfet diffusion regions and silicide-like alloy contact: A metal oxide semiconductor field effect transistor and method for forming the same include exposing portions on a substrate adjacent to a gate stack, forming a dopant layer over the gate stack and in contact with the substrate in the portions exposed and annealing the dopant layer to drive dopants... Agent: International Business Machines Corporation

20130001659 - Self-aligned iii-v mosfet diffusion regions and silicide-like alloy contact: A metal oxide semiconductor field effect transistor and method for forming the same include exposing portions on a substrate adjacent to a gate stack, forming a dopant layer over the gate stack and in contact with the substrate in the portions exposed and annealing the dopant layer to drive dopants... Agent: International Business Machines Corporation

20130001661 - High full-well capacity pixel with graded photodetector implant: Embodiments of a process for forming a photodetector region in a CMOS pixel by dopant implantation, the process comprising masking a photodetector area of a surface of a substrate for formation of the photodetector region, positioning the substrate at a plurality of twist angles, and at each of the plurality... Agent: Omnivision Technologies, Inc.

20130001663 - Dram layout with vertical fets and method of formation: DRAM cell arrays having a cell area of about 4F2 comprise an array of vertical transistors with buried bit lines and vertical double gate electrodes. The buried bit lines comprise a silicide material and are provided below a surface of the substrate. The word lines are optionally formed of a... Agent: Micron Technology, Inc.

20130001662 - Semiconductor device: A semiconductor device includes: a semiconductor element; a divider connected with an input portion of the semiconductor element; and a combiner connected with an output portion of the semiconductor element. The divider is disposed on a substrate and has a first divider portion including a first transmission line and a... Agent: Panasonic Corporation

20130001664 - Decoupling capacitor circuitry: Integrated circuits with decoupling capacitor circuitry are provided. The decoupling capacitor circuitry may include density-compliance structures. The density-compliance structures may be strapped to metal paths driven by power supply lines. Strapping density-compliance dummy structures in this way may increase the capacitance per unit area of the decoupling capacitor circuitry. Strapping... Agent:

20130001666 - Memory cells, arrays of memory cells, and methods of forming memory cells: A memory cell includes a vertically oriented transistor having an elevationally outer source/drain region, an elevationally inner source/drain region, and a channel region elevationally between the inner and outer source/drain regions. The inner source/drain region has opposing laterally outer sides. One of a pair of data/sense lines is electrically coupled... Agent: Micron Technology, Inc.

20130001665 - Mosfet and method for manufacturing the same: The present disclosure discloses a MOSFET and a method for manufacturing the same, wherein the MOSFET comprises: an SOI wafer comprising a semiconductor substrate, a buried insulating layer, and a semiconductor layer, the buried insulating layer being disposed on the semiconductor substrate, and the semiconductor layer being disposed on the... Agent:

20130001668 - Floating gate device with oxygen scavenging element: A floating gate device is provided. A tunnel oxide layer is formed over the channel. A floating gate is formed over the tunnel oxide layer. A high-k dielectric layer is formed over the floating gate. A control gate is formed over the high-k dielectric layer. At least one of the... Agent: International Business Machines Corporation

20130001667 - Nonvolatile memory device and method for making the same: A method for making a nonvolatile memory device includes the following steps. A conductive structure is formed, wherein the conductive structure has a first top portion. The first top portion is converted into a second top portion having a domed surface.... Agent: Macronix International Co., Ltd.

20130001670 - Semiconductor device and method of manufacturing semiconductor device: A conductive film having a first width in a first direction, an ONO film, and a control gate are formed above a tunnel gate insulating film. With the control gate as a mask, the conductive film is etched to form a floating gate. Then, an inter-layer insulating film is formed.... Agent: Fujitsu Semiconductor Limited

20130001669 - Semiconductor memory devices and methods of manufacturing the same: A semiconductor memory device includes a substrate and a plurality of rows of memory cells. The substrate comprises a plurality of isolation structures and a plurality of active regions. Each of the active regions is spaced apart from another active region by one of the isolation structures. In a cross-section... Agent: Macronix International Co., Ltd.

20130001671 - Select gates for memory: Methods of forming memory and memory devices are disclosed, such as a memory device having a memory cell with a floating gate formed from a first conductor, a control gate formed from a second conductor, and a dielectric interposed between the floating gate and the control gate. For example, a... Agent: Micron Technology, Inc.

20130001672 - Semiconductor device: A semiconductor device includes a main active region provided in a semiconductor substrate and having a first side surface and a second side surface facing each other. A first auxiliary active region adjacent the first side surface of the main active region and spaced apart from the main active region... Agent: Samsung Electronics Co., Ltd.

20130001673 - Fortification of charge storing material in high k dielectric environments and resulting apparatuses: Memories, systems, and methods for forming memory cells are disclosed. One such memory cell includes a charge storage node that includes nanodots over a tunnel dielectric and a protective film over the nanodots. In another memory cell, the charge storage node includes nanodots that include a ruthenium alloy. Memory cells... Agent: Micron Technology, Inc.

20130001674 - Semiconductor device with voltage compensation structure: A semiconductor device with a high voltage compensation component is manufactured by etching a trench into an epitaxial semiconductor material doped with n-type dopant atoms and p-type dopant atoms and disposing a first semiconductor or insulating material along one or more sidewalls of the trench. The first semiconductor or insulating... Agent: Infineon Technologies Austria Ag

20130001675 - Semiconductor devices and methods for manufacturing the same: A semiconductor device includes a semiconductor substrate including first trenches defining outer sidewalls of a pair of active pillars and a second trench defining opposing inner sidewalls of the pair of active pillars. The second trench may have a bottom surface located at a higher level than bottom surface of... Agent: Samsung Electronics Co., Ltd.

20130001678 - High breakdown voltage semiconductor device with an insulated gate formed in a trench, and manufacturing process thereof: A semiconductor device includes: a semiconductor body; a trench having side walls and a bottom; a gate region made of conductive material, extending within the trench; an insulating region, extending along bottom portions of the side walls of the trench and on the bottom of the trench; a gate insulating... Agent: Stmicroelectronics S.r.l.

20130001681 - Mos-driven semiconductor device and method for manufacturing mos-driven semiconductor device: A mask used to form an n+ source layer (11) is formed by a nitride film on the surface of a substrate before a trench (7) is formed. At this time, a sufficient width of the n+ source layer (11) on the surface of the substrate is secured. Thereby, stable... Agent: Fuji Electric Co., Ltd.

20130001679 - Semiconductor device and manufacturing method thereof: A semiconductor device includes a semiconductor layer, a gate trench formed in the semiconductor layer, a source region exposed at a front surface of the semiconductor layer and forming a curved portion of the gate trench, a channel region forming a planar portion of the gate trench, a drain region... Agent: Rohm Co., Ltd.

20130001680 - Semiconductor device, and method for manufacturing the same: A semiconductor device (A1) includes a semiconductor layer having a first face with a trench (3) formed thereon and a second face opposite to the first face, a gate electrode (41), and a gate insulating layer (5). The semiconductor layer includes a first n-type semiconductor layer (11), a second n-type... Agent: Rohm Co., Ltd.

20130001677 - Semiconductor device, method of manufacturing the semiconductor device, and electronic device: The upper end of a gate electrode is situated below the surface of a semiconductor substrate. An insulating layer is formed over the gate electrode and over the semiconductor substrate situated at the periphery thereof. The insulating layer has a first insulating film and a low oxygen permeable insulating film.... Agent: Renesas Electronics Corporation

20130001676 - Through silicon via direct fet signal gating: A system comprises a first integrated circuit (IC) chip that includes a first electronic component; a second IC chip that includes a second electronic component; a through silicon via (TSV) in the second IC chip that electrically couples the first electronic component to the second electronic component; and a signal... Agent: International Business Machines Corporation

20130001682 - Semiconductor structures including bodies of semiconductor material, devices including such structures and related methods: Semiconductor structures that include bodies of a semiconductor material spaced apart from an underlying substrate. The bodies may be physically separated from the substrate by at least one of a dielectric material, an open volume and a conductive material. The bodies may be electrically coupled by one or more conductive... Agent: Micron Technology, Inc.

20130001683 - Flexible crss adjustment in a sgt mosfet to smooth waveforms and to avoid emi in dc-dc application: A semiconductor power device comprises a plurality of power transistor cells each having a trenched gate disposed in a gate trench wherein the trenched gate comprising a shielding bottom electrode disposed in a bottom portion of the gate trench electrically insulated from a top gate electrode disposed in a top... Agent:

20130001684 - Method of manufacturing trench mosfet using three masks process having tilt- angle source implants: In according with the present invention, a semiconductor device is formed as follows. A contact insulation layer is deposited on the top surface of said silicon layer. A contact mask is applied and following with a dry oxide etching to remove the contact insulation layer from contact open areas. The... Agent:

20130001685 - Semiconductor device: The present invention relates to an integrated circuit (semiconductor device) for which consolidation of a fine CMOS and a medium/high-voltage MOSFET is assumed to be carried out. A feature of the present invention is a small width (channel length) of a channel region CH. Specifically, when the width of the... Agent: Hitachi, Ltd.

20130001686 - Electro-static discharge protection device: An Electro-Static Discharge (ESD) protection device is provided. The ESD protection device includes a metal-oxide semiconductor (MOS) transistor, including a source area having a surface on which a first silicide is formed, the source area including a source connecting area including a first connecting portion formed on the first silicide,... Agent: Magnachip Semiconductor, Ltd.

20130001687 - Transistor with reduced channel length variation: According to an exemplary embodiment, a method for fabricating a MOS transistor, such as an LDMOS transistor, includes forming a self-aligned lightly doped region in a first well underlying a first sidewall of a gate. The method further includes forming a self-aligned extension region under a second sidewall of the... Agent: Broadcom Corporation

20130001688 - Self-aligned body fully isolated device: A device having a self-aligned body on a first side of a gate is disclosed. The self-aligned body helps to achieve very low channel length for low Rdson. The self-aligned body is isolated, enabling to bias the body at different bias potentials. The device may be configured into a finger... Agent: Globalfoundries Singapore Pte. Ltd.

20130001693 - Band edge engineered vt offset device: Band edge engineered Vt offset devices, design structures for band edge engineered Vt offset devices and methods of fabricating such structures is provided herein. The structure includes a first FET having a channel of a first compound semiconductor of first atomic proportions resulting in a first band structure and a... Agent: International Business Machines Corporation

20130001690 - Mosfet and method for manufacturing the same: The present application provides a MOSFET and a method for manufacturing the same. The MOSFET comprises: a semiconductor substrate; a first buried insulating layer on the semiconductor substrate; a back gate formed in a first semiconductor layer which is on the first buried insulating layer; a second buried insulating layer... Agent:

20130001692 - Semiconductor devices including a layer of polycrystalline silicon having a smooth morphology: A method for controlling the morphology of deposited silicon on a layer of silicon dioxide and semiconductor devices incorporating such deposited silicon are provided. The method comprises the steps of: providing a layer of silicon dioxide; implanting hydrogen ions into the layer of silicon dioxide by plasma source ion implantation;... Agent: Micron Technology, Inc.

20130001691 - Semiconductor structure and method for manufacturing the same: The present invention provides a method for manufacturing a semiconductor structure, which comprises: providing an SOI substrate, and forming a gate structure on the SOI substrate; etching an SOI layer and a BOX layer of the SOI substrates on both sides of the gate structure, so as to form trenches... Agent: Beijing Nmc., Ltd.

20130001689 - Textured gate for high current thin film transistors: A textured thin film transistor is comprised of an insulator sandwiched between a textured gate electrode and a semi-conductor. A source electrode and drain electrode are fabricated on a surface of the semi-conductor. The textured gate electrode is fabricated such that a surface is modified in its texture and/or geometry,... Agent: Palo Alto Research Center Incorporated

20130001694 - Low capacitance transient voltage suppressor (tvs) with reduced clamping voltage: A low capacitance transient voltage suppressor with reduced clamping voltage includes an n+ type substrate, a first epitaxial layer on the substrate, a buried layer formed within the first epitaxial layer, a second epitaxial layer on the first epitaxial layer, and an implant layer formed within the first epitaxial layer... Agent: Alpha And Omega Semiconductor Incorporated

20130001696 - Semiconductor device and method for manufacturing the same: A gate electrode and an electrode for protective diode are coupled to each other. An insulating film below the electrode for protective diode makes a leak current flow between the electrode for protective diode and an electron transit layer and an electron supply layer when a voltage equal to or... Agent: Fujitsu Semiconductor Limited

20130001695 - Uni-directional transient voltage suppressor (tvs): An epitaxial layer is supported on top of a substrate. First and second body regions are formed within the epitaxial layer separated by a predetermined lateral distance. Trigger and source regions are formed within the epitaxial layer. A first source region is transversely adjacent the first body region between first... Agent:

20130001697 - Semiconductor device: A semiconductor device includes a signal input pad, a protection object circuit, a first connection node connected with the protection object circuit, a first resistance element connected between the signal input pad and the first connection node, a first protection circuit section arranged between a power supply line or a... Agent: Renesas Electronics Corporation

20130001698 - Method to modify the shape of a cavity using angled implantation: A method of modifying a shape of a cavity in a substrate. The method includes forming one or more cavities on a surface of the substrate between adjacent relief structures. The method also includes directing ions toward the substrate at a non-normal angle of incidence, wherein the ions strike an... Agent: Varian Semiconductor Equipment Associates, Inc.

20130001700 - Local interconnect having increased misalignment tolerance: A method is provided for forming an interconnect in a semiconductor memory device. The method includes forming a pair of source select transistors on a substrate. A source region is formed in the substrate between the pair of source select transistors. A first inter-layer dielectric is formed between the pair... Agent: Spansion LLC

20130001699 - Trench junction barrier schottky structure with enhanced contact area integrated with a mosfet: The present invention also discloses that a plurality of trenches with adjacent top mesas can be used to form a Schottky diode with even larger contact area, wherein the trenches are built using the isolation area between two cells of MOSFET with minimum extra overhead by shrinking the dimension of... Agent: Sinopower Semiconductor, Inc.

20130001702 - Enhancing mosfet performance by optimizing stress properties: A device and method for improving performance of a transistor includes gate structures formed on a substrate having a spacing therebetween. The gate structures are formed in an operative relationship with active areas formed in the substrate. A stress liner is formed on the gate structures. An angled ion implantation... Agent: International Business Machines Corporation

20130001701 - Vertical stacking of field effect transistor structures for logic gates: Vertically stacked Field Effect Transistors (FETs) are created where a first FET and a second FET are controllable independently. The vertically stacked FETs may be connected in series or in parallel, thereby suitable for use as a portion of a NAND circuit or a NOR circuit. Epitaxial growth over a... Agent: International Business Machines Corporation

20130001703 - Semiconductor device: A combined switching device includes a MOSFET disposed in a MOSFET area and IGBTs disposed in IGBT areas of a SiC substrate. The MOSFET and the IGBTs have gate electrodes respectively connected, a source electrode and emitter electrodes respectively connected, and a drain electrode and a collector electrode respectively connected.... Agent: Fuji Electric Co., Ltd.

20130001704 - Resistors formed based on metal-oxide-semiconductor structures: A device includes a metal-oxide-semiconductor (MOS) device, which includes a gate electrode and a source/drain region adjacent the gate electrode. A first and a second contact plug are formed directly over and electrically connected to two portions of a same MOS component, wherein the same MOS component is one of... Agent: Taiwan Semiconductor Manufacturing Company., Ltd.

20130001705 - Epitaxy profile engineering for finfets: A method of forming an integrated circuit structure includes providing a wafer including a substrate and a semiconductor fin at a major surface of the substrate, and performing a deposition step to epitaxially grow an epitaxy layer on a top surface and sidewalls of the semiconductor fin, wherein the epitaxy... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130001707 - Fabricating method of mos transistor, fin field-effect transistor and fabrication method thereof: A fabricating method of a MOS transistor includes the following steps. A substrate is provided. A gate dielectric layer is formed on the substrate. A nitridation process containing nitrogen plasma and helium gas is performed to nitride the gate dielectric layer. A fin field-effect transistor and fabrication method thereof are... Agent:

20130001706 - Method and structure for low resistive source and drain regions in a replacement metal gate process flow: In one embodiment a method is provided that includes providing a structure including a semiconductor substrate having at least one device region located therein, and a doped semiconductor layer located on an upper surface of the semiconductor substrate in the at least one device region. After providing the structure, a... Agent: International Business Machines Corporation

20130001708 - Transistors having a gate comprising a titanium nitride layer and method for depositing this layer: A MOS transistor having a gate insulator including a dielectric of high permittivity and a conductive layer including a TiN layer, wherein the nitrogen composition in the TiN layer is sub-stoichiometric in its lower portion and progressively increases to a stoichiometric composition in its upper portion.... Agent:

20130001710 - Process for a sealed mems device with a portion exposed to the environment: A method and system for providing a MEMS device with a portion exposed to an outside environment are disclosed. The method comprises bonding a handle wafer to a device wafer to form a MEMS substrate with a dielectric layer disposed between the handle and device wafers. The method includes lithographically... Agent: Invensense, Inc.

20130001709 - Systems and methods for vertically stacking a sensor on an integrated circuit chip: A sensing unit package with reduced size and improved thermal sensing capabilities. An exemplary package includes a printed circuit board with a plurality of electrical traces, an application-specific integrated circuit (Analog ASIC) chip, and a micromachined sensor formed on a microelectromechanical system (MEMS) die. The Analog ASIC chip is electrically... Agent: Honeywell International Inc.

20130001712 - Acceleration sensor: A semiconductor device includes a semiconductor substrate and a semiconductor mass element configured to move in response to an applied acceleration. The mass element is defined by trenches etched into the semiconductor substrate and a cavity below the mass element. The semiconductor device includes a sensing element configured to sense... Agent: Infineon Technologies Ag

20130001711 - Manufacturing method for a micromechanical component, corresponding composite component, and corresponding micromechanical component: A micromechanical component including a first composite of a plurality of semiconductor chips, the first composite having a first front and back surfaces, a second composite of a corresponding plurality of carrier substrates, the second composite having a second front and back surfaces; wherein the first front surface and the... Agent:

20130001719 - Interaction structure for a storage medium: A process manufactures an interaction structure for a storage medium. The process includes forming a first interaction head provided with a first conductive region having a sub-lithographic dimension. The step of forming a first interaction head includes: forming on a surface a first delimitation region having a side wall; depositing... Agent: Stmicroelectronics S.r.l.

20130001720 - Magnetic stack having reference layers with orthogonal magnetization orientation directions: A magnetic cell includes a ferromagnetic free layer having a free magnetization orientation direction and a first ferromagnetic pinned reference layer having a first reference magnetization orientation direction that is parallel or anti-parallel to the free magnetization orientation direction. A first oxide barrier layer is between the ferromagnetic free layer... Agent: Seagate Technology LLC

20130001721 - Magnetic tunnel junction having coherent tunneling structure: A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. A magnesium oxide tunnel barrier layer is disposed on the... Agent: Seagate Technology LLC

20130001718 - Magnetic tunnel junction with electronically reflective insulative spacer: Magnetic tunnel junctions having a specular insulative spacer are disclosed. The magnetic tunnel junction includes a free magnetic layer, a reference magnetic layer, an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the reference magnetic layer, and an electrically insulating and electronically reflective layer positioned... Agent: Seagate Technology LLC

20130001714 - Magnetoresistive element and magnetic memory: According to one embodiment, a magnetoresistive element includes a storage layer having a perpendicular and variable magnetization, a reference layer having a perpendicular and invariable magnetization, a shift adjustment layer having a perpendicular and invariable magnetization in a direction opposite to a magnetization of the reference layer, a first nonmagnetic... Agent: Kabushiki Kaisha Toshiba

20130001713 - Magnetoresistive element and magnetic memory using the same: According to one embodiment, a magnetoresistive element includes the following configuration. First nonmagnetic layer is provided between the first magnetic layer (storage layer) and the second magnetic layer (reference layer). Third magnetic layer is formed on a surface of the storage layer, which is opposite to a surface on which... Agent: Kabushiki Kaisha Toshiba

20130001715 - Magnetoresistive element and manufacturing method of the same: In accordance with an embodiment, a magnetoresistive element includes a lower electrode, a first magnetic layer on the lower electrode, a first interfacial magnetic layer on the first magnetic layer, a nonmagnetic layer on the first interfacial magnetic layer, a second interfacial magnetic layer on the nonmagnetic layer, a second... Agent: Kabushiki Kaisha Toshiba

20130001716 - Magnetoresistive element and manufacturing method of the same: In accordance with an embodiment, a magnetoresistive element includes a lower electrode, a first magnetic layer on the lower electrode, a first diffusion prevention layer on the first magnetic layer, a first interfacial magnetic layer on the first metal layer, a nonmagnetic layer on the first interfacial magnetic layer, a... Agent: Kabushiki Kaisha Toshiba

20130001717 - Perpendicular mram with mtj including laminated magnetic layers: Thin film perpendicular magnetic multilayer structures which can be used in various thin film magnetic structures are described. One multilayer structure embodiment is formed by interlacing a soft magnetic layer and a FePt based magnetic layer in N repeats, where N is a positive integer. Various MRAM MTJ structures are... Agent:

20130001722 - Co-implant for backside illumination sensor: A system and method for image sensing is disclosed. An embodiment comprises a substrate with a pixel region, the substrate having a front side and a backside. A co-implant process is performed along the backside of the substrate opposing a photosensitive element positioned along the front side of the substrate.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130001727 - Image sensor, method and design structure including non-planar reflector: A solid state image sensor, a method for fabricating the solid state image sensor and a design structure for fabricating the solid state image sensor structure include a substrate that in turn includes a photosensitive region. Also included within solid state image sensor is a non-planar reflector layer located over... Agent: International Business Machines Corporation

20130001724 - Method for manufacturing solid-state imaging element, solid-state imaging element, method for manufacturing electronic apparatus, and electronic apparatus: Disclosed herein is a method for manufacturing a solid-state imaging element, the method including forming lenses that are each provided corresponding to a light receiving part of a respective one of a plurality of pixels arranged in an imaging area over a semiconductor substrate and collect light onto the light... Agent: Sony Corporation

20130001725 - Method of fabricating backside-illuminated image sensor: Provided is a method of fabricating a backside illuminated image sensor that includes providing a device substrate having a frontside and a backside, where pixels are formed at the frontside and an interconnect structure is formed over pixels, forming a re-distribution layer (RDL) over the interconnect structure, bonding a first... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130001726 - Optical waveguide device: An optical waveguide device of the present invention comprises: an optical waveguide including a plurality of cores configured to emit outgoing light from distal ends thereof; and a light-receiving element including a plurality of photo diodes configured to receive the outgoing light. Respective pitches L1 between adjacent cores are greater... Agent: Nitto Denko Corporation

20130001723 - Photonic systems and methods of forming photonic systems: Some embodiments include photonic systems. The systems may include a silicon-containing waveguide configured to direct light along a path, and a detector proximate the silicon-containing waveguide. The detector may comprise a detector material which has a lower region and an upper region, with the lower region having a higher concentration... Agent: Micron Technology, Inc.

20130001728 - Backside illuminated image sensors with vertical light shields: Methods for forming backside illuminated (BSI) image sensors having vertical light shields are provided. Vertical light shields may be configured such that incoming light is blocked from reaching a portion of a pixel array formed on the backside illuminated image sensor. Vertical light shields may include horizontal portions that block... Agent:

20130001729 - High fill-factor laser-treated semiconductor device on bulk material with single side contact scheme: The present disclosure provides systems and methods for configuring and constructing a single photo detector or array of photo detectors with all fabrications circuitry on a single side of the device. Both the anode and the cathode contacts of the diode are placed on a single side, while a layer... Agent: Sionyx, Inc.

20130001731 - Non-planar inorganic optoelectronic devices: A method of fabricating an optoelectronic device includes creating an optoelectronic structure on a first substrate. The optoelectronic structure includes a release layer and a plurality of inorganic semiconductor layers supported by the release layer. The plurality of inorganic semiconductor layers is configured to be active in operation of the... Agent: The Regents Of The University Of Michigan

20130001732 - Pixel sensors of multiple pixel size and methods of implant dose control: CMOS pixel sensors with multiple pixel sizes and methods of manufacturing the CMOS pixel sensors with implant dose control are provided. The method includes forming a plurality of pixel sensors in a same substrate and forming a masking pattern over at least one of the plurality of pixel sensors that... Agent: International Business Machines Corporation

20130001730 - Solid-state imaging device, method for manufacturing the same, and electronic apparatus: A solid-state imaging device includes a semiconductor substrate, a connection portion, and one or more first photoelectric conversion units formed in the semiconductor substrate. The semiconductor substrate has a back side and a front side. The back side is a light incident surface, and the front side is a circuit-forming... Agent: Sony Corporation

20130001733 - Solid-state imaging apparatus and method for manufacturing solid-state imaging apparatus: According to one embodiment, a method for manufacturing a solid-state imaging apparatus is provided. The method for manufacturing a solid-state imaging apparatus includes forming an element separating area separating photoelectric converting elements therebetween by epitaxially growing a semiconductor layer of a first conductivity type; and forming a charge accumulating area... Agent: Kabushiki Kaisha Toshiba

20130001734 - Schottky diode structure: A Schottky diode structure includes a semiconductor substrate having an anode region and a cathode region. A lightly doped region with a predetermined conductivity type is in the semiconductor substrate. A metal contact overlies the lightly doped region and corresponds to the cathode region to serve as a cathode. A... Agent: Mediatek Inc.

20130001736 - High-voltage integrated circuit device: A high-voltage integrated circuit device has formed therein a high-voltage junction terminating region that is configured by a breakdown voltage region formed of an n-well region, a ground potential region formed of a p-region, a first contact region and a second contact region. An opposition section of the high-voltage junction... Agent: Fuji Electric Co., Ltd.

20130001735 - Thermally conductive substrate for galvanic isolation: A galvanic isolation integrated circuit system includes a semiconductor substrate; a layer of thermally conductive material, e.g., CVD nano- or poly-diamond thin film or boron nitride CVD thin film, formed over the semiconductor substrate; a first integrated circuit structure formed over the layer of thermally conductive material; a second integrated... Agent:

20130001737 - Semiconductor devices structures including an isolation structure: A shallow isolation trench structure and methods of forming the same wherein the method of formation comprises a layered structure of a buffer film layer over a dielectric layer that is atop a semiconductor substrate. The buffer film layer comprises a material that is oxidation resistant and can be etched... Agent: Micron Technology, Inc.

20130001738 - High breakdown voltage integrated circuit isolation structure: A high breakdown voltage integrated circuit isolator device communicates a digital signal from a signal input on one semiconductor die to a signal output on another semiconductor die while providing high voltage isolation between the signal input and the signal output. Each die may include a respective capacitive isolation barrier... Agent: Silicon Laboratories, Inc.

20130001739 - Semiconductor structures and devices and methods of forming the same: Methods of forming semiconductor structures that include bodies of a semiconductor material disposed between rails of a dielectric material are disclosed. Such methods may include filling a plurality of trenches in a substrate with a dielectric material and removing portions of the substrate between the dielectric material to form a... Agent: Micron Technology, Inc.

20130001740 - Heat spreader for thermally enhanced flip-chip ball grid array package: A heat spreader is provided for use with a thermally enhanced flip-chip ball grid array package. In the package, a semiconductor die is positioned front-side down on a package substrate, coupled thereto via solder balls. Passive devices can also be coupled to the substrate alongside the die. The heat spreader... Agent: Stmicroelectronics Pte Ltd.

20130001741 - Integrated circuit with a fin-based fuse, and related fabrication method: Methods of fabricating an integrated circuit with a fin-based fuse, and the resulting integrated circuit with a fin-based fuse are provided. In the method, a fin is created from a layer of semiconductor material and has a first end and a second end. The method provides for forming a conductive... Agent: Globalfoundries Inc.

20130001742 - Semiconductor device: In a semiconductor device, a first semiconductor chip includes a first circuit and a first inductor, and a second semiconductor chip includes a second circuit and chip-side connecting terminals. An interconnect substrate is placed over the first semiconductor chip and the second semiconductor chip. The interconnect substrate includes a second... Agent: Renesas Electronics Corporation

20130001743 - Metal insulator metal structure with remote oxygen scavenging: A structure includes a first metallic electrode, a dielectric film formed over the first metallic electrode, and a second metallic electrode formed over the dielectric film. The second metallic electrode includes an oxygen scavenging material. The oxygen scavenging material is selected such that an oxygen density decreases in a region... Agent: International Business Machines Corporation

20130001744 - Semiconductor device and method for manufacturing the same: In a semiconductor device, a polysilicon layer of a lower electrode contact plug is removed by a strip process such that the deposition area of a dielectric film is increased and capacitance of a capacitor is assured. A method for manufacturing the semiconductor device is also disclosed.... Agent: Hynix Semiconductor Inc.

20130001745 - Semiconductor device, lower layer wiring designing device, method of designing lower layer wiring and computer program: A semiconductor device includes a lower wiring layer including a plurality of lower wirings, each of the lower wirings being elongated to run substantially parallel to a first direction, a metal-insulator-metal (MIM) capacitor formed above the plurality of lower wirings, the MIM capacitor comprising lower and upper electrodes and a... Agent: Renesas Electronics Corporation

20130001746 - Multi-finger capacitor with reduced series resistance: An electronic die includes a multi-finger capacitor including a first electrically conductive plate including a plurality of first metal fingers joined together by a first metal base, and a second electrically conductive plate including a plurality of second metal fingers joined together by a second metal base. A dielectric layer... Agent: Texas Instruments Incorporated

20130001747 - Bipolar transistor and method for manufacturing the same: A method for manufacturing a bipolar transistor includes forming a first epitaxial layer on a semiconductor substrate, forming a second epitaxial layer on the first epitaxial layer, forming an oxide layer on the second epitaxial layer, etching the oxide layer to form an opening in which the second epitaxial layer... Agent: Csmc Technologies Fab1 Co., Ltd.

20130001748 - Semiconductor substrate and method of forming: A method of forming a semiconductive substrate material for an electronic device including forming a plurality of semiconductive layers on a substrate during a continuous growth process in a reaction chamber, wherein during the continuous growth process, a release layer is formed between a base layer and an epitaxial layer... Agent: Saint-gobain Ceramics & Plastics, Inc.

20130001751 - Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the same: An actinic ray-sensitive or radiation-sensitive resin composition of the present invention contains a resin (P) which includes a repeating unit (A) having an ionic structural moiety which generates an acid anion by being decomposed due to irradiation with actinic rays or radiation, a repeating unit (B) having a proton acceptor... Agent: Fujifilm Corporation

20130001749 - Film stack including metal hardmask layer for sidewall image transfer fin field effect transistor formation: A method for formation of a fin field effect transistor (FinFET) device includes forming a mandrel mask and a large feature (FX) mask on a metal hardmask layer of a film stack, the film stack including a silicon on insulator (SOI) layer located underneath the metal hardmask layer; etching the... Agent: International Business Machines Corporation

20130001750 - Film stack including metal hardmask layer for sidewall image transfer fin field effect transistor formation: A method for formation of a fin field effect transistor (FinFET) device includes forming a mandrel mask on a metal hardmask layer of a film stack, the film stack including a silicon on insulator (SOI) layer located underneath the metal hardmask layer; forming a large feature (FX) mask on the... Agent: International Business Machines Corporation

20130001752 - Method of semiconductor manufacturing process: The present invention related to a method for manufacturing a semiconductor, comprising steps of: providing a growing substrate; forming on the growing substrate to have plural grooves; forming a semiconductor element layer on the growing substrate; and changing the temperature of the growing substrate and the semiconductor element layer so... Agent: National Chiao Tung University

20130001753 - Template substrate and method for manufacturing same: According to one embodiment, a template substrate includes a substrate and a mask. The substrate includes a mesa region formed in a central portion of an upper surface of the substrate. The mesa region is configured to protrude more than a region of the substrate around the mesa region. An... Agent:

20130001754 - In-situ photoresist strip during plasma etching of active hard mask: A method for etching features in a silicon layer is provided. A hard mask layer is formed over the silicon layer. A photoresist layer is formed over the hard mask layer. The hard mask layer is opened. The photoresist layer is stripped by providing a stripping gas; forming a plasma... Agent: Lam Research Corporation

20130001755 - Stacked semiconductor device and fabrication method for same: A stacked semiconductor device is constructed by stacking in two levels: a lower semiconductor device having a wiring board, at least one semiconductor chip mounted on a first surface of the wiring board and having electrodes electrically connected to wiring by way of a connection means, an encapsulant composed of... Agent: Elpida Memory, Inc.

20130001756 - Three-dimensional package structure: The present invention discloses a three-dimensional package structure. The first conductive element comprises a top surface, a bottom surface and a lateral surface. The conductive pattern disposed on the top surface of the first conductive element. A second conductive element is disposed on the conductive pattern. The first conductive element... Agent: Cyntec Co., Ltd.

20130001757 - Flip-chip qfn structure using etched lead frame: A microelectronic unit can include a lead frame and a device chip. The lead frame can have a plurality of monolithic lead fingers extending in a plane of the lead frame. Each lead finger can have a fan-out portion and a chip connection portion extending in the lead frame plane.... Agent: Tessera Inc.

20130001758 - Power semiconductor package: The present invention provides a power semiconductor package. The power semiconductor package comprises a dual lead frame assembly comprising a bottom lead frame having a first heat sink pad at its bottom surface and a top lead frame having a second heat sink pad at its bottom surface. The top... Agent: Psi Technologies, Inc.

20130001759 - Semiconductor package and method of manufacturing the semiconductor package: Disclosed herein is a semiconductor package including: first power device; second power device formed in an upper portion of the first power device; a first lead frame formed in a lower portion of the first power device; a second lead frame formed in the upper portion of the first power... Agent: Samsung Electro-mechanics Co., Ltd.

20130001761 - Lead carrier with thermally fused package components: A lead carrier provides support for a semiconductor device during manufacture. The lead carrier includes a temporary support member with multiple package sites. Each package site includes a die attach pad surrounded by a plurality of terminal pads. The pads are formed of a fusible fixing material on a lower... Agent:

20130001760 - Package substrate having die pad with outer raised portion and interior recessed portion: An electronic assembly includes a substrate including a die pad, where the die pad includes and an outer raised flat portion and a recessed portion that includes an inner recessed portion. A semiconductor die is directly on the outer raised flat portion and affixed to the die pad by a... Agent: Texas Instruments Incorporated

20130001762 - Semiconductor device and method of using leadframe bodies to form openings through encapsulant for vertical interconnect of semiconductor die: A semiconductor device has a leadframe with a plurality of bodies extending from the base plate. A first semiconductor die is mounted to the base plate of the leadframe between the bodies. An encapsulant is deposited over the first semiconductor die and base plate and around the bodies of the... Agent: Stats Chippac, Ltd.

20130001763 - Power device having high switching speed: An electronic device includes at least one electronic component chip having a first conduction terminal and a control terminal on a first surface of the chip and a second conduction terminal on a second surface opposite the first surface of the chip. An insulating body embeds the chip. The insulating... Agent: Stmicroelectronics S.r.l.

20130001764 - Power device having reduced thickness: An electronic device includes at least one chip and an insulating body embedding the chip. The electronic device further includes a heat-sink in contact with the chip. The heat-sink includes a plate having a first thickness. A recess is provided in the plate that defines a central portion of the... Agent: Stmicroelectronics S.r.l.

20130001765 - Integrated heater on mems cap for wafer scale packaged mems sensors: A system and method for controlling temperature of a MEMS sensor are disclosed. In a first aspect, the system comprises a MEMS cap encapsulating the MEMS sensor and a CMOS die vertically arranged to the MEMS cap. The system includes a heater integrated into the MEMS cap. The integrated heater... Agent: Invensense, Inc.

20130001768 - Method of manufacturing an electronic system: A method of manufacturing an electronic system. One embodiment provides a semiconductor chip having a first main face and a second main face opposite to the first main face. A mask is applied to the first main face of the semiconductor chip. A compound is applied to the first main... Agent: Infineon Technologies Ag

20130001767 - Package and method for manufacturing package: A method for manufacturing a package, includes preparing a substrate having a first surface on which a connecting pad is formed, mounting a sacrificing material on the connecting pad, forming a package portion covering the first surface of the substrate, exposing the sacrificing material from a surface of the package... Agent: Shinko Electric Industries Co., Ltd.

20130001766 - Processing method and processing device of semiconductor wafer, and semiconductor wafer: According to one embodiment, a substrate processing method is disclosed. The above method includes: grinding an outer edge portion on a back surface of a semiconductor wafer with a semiconductor element formed on its front surface with a first grindstone or blade to thereby form an annular groove; grinding a... Agent: Kabushiki Kaisha Toshiba

20130001769 - Bump-on-trace structures with increased current entrance areas: A device includes a package component, and a metal trace on a surface of the package component. A first and a second dielectric mask cover a top surface and sidewalls of the metal trace, wherein a landing portion of the metal trace is located between the first and the second... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130001775 - Conductive connecting member and manufacturing method of same: A conductive connecting member formed on a bonded face of an electrode terminal of a semiconductor or an electrode terminal of a circuit board, the conductive connecting member comprising a porous body formed in such manner that a conductive paste containing metal fine particles (P) having mean primary particle diameter... Agent:

20130001774 - Electrically conductive paste, and electrically conductive connection member produced using the paste: Providing the conductive paste for the material forming the conductive connecting member without disproportionately located holes (gaps), coarse voids, and cracks, which improves thermal cycle and is excellent in crack resistance and bonding strength. An conductive paste including metal fine particles (P) comprising metal fine particles (P1) of one or... Agent: Furukawa Electric Co., Ltd.

20130001772 - Semiconductor device and a method of manufacturing the same: A semiconductor device having redistribution interconnects in the WPP technology and improved reliability, wherein the redistribution interconnects have first patterns and second patterns which are electrically separated from each other within the plane of the semiconductor substrate, the first patterns electrically coupled to the multi-layer interconnects and the floating second... Agent: Renesas Electronics Corporation

20130001773 - Semiconductor device and method of forming a wafer level package structure using conductive via and exposed bump: A semiconductor device has a carrier. A semiconductor wafer including a semiconductor die is mounted to the carrier with an active surface of the semiconductor die facing away from the carrier. A plurality of bumps is formed over the active surface of the semiconductor die. An opening is formed in... Agent: Stats Chippac, Ltd.

20130001771 - Semiconductor device and method of forming fo-wlcsp with discrete semiconductor components mounted under and over semiconductor die: A semiconductor die has first and second discrete semiconductor components mounted over a plurality of wettable contact pads formed on a carrier. Conductive pillars are formed over the wettable contact pads. A semiconductor die is mounted to the conductive pillars over the first discrete components. The conductive pillars provide vertical... Agent: Stats Chippac, Ltd.

20130001770 - Wafer level embedded and stacked die power system-in-package packages: Wafer level embedded and stacked die power system-in-package semiconductor devices, and methods for making and using the same, are described. The methods include placing a first side of a substrate frame, which includes through cavity and an adjacent via, on a carrier. A first side of a component selected from... Agent:

20130001778 - Bump-on-trace (bot) structures: A bump-on-trace (BOT) structure is described. The BOT structure includes a first work piece with a metal trace on a surface of the first work piece, wherein the metal trace has a first axis. The BOT structure further includes a second work piece with an elongated metal bump, wherein the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130001777 - Copper wire receiving pad: On embodiment is directed to a welding pad capable of receiving a ball-shaped copper wire at its end, including a first copper pad coated with a protection layer and topped with a second pad containing aluminum having dimensions smaller than those of the first pad and smaller than the ball... Agent: Stmicroelectronics (grenoble 2) Sas

20130001776 - Interconnect structure for wafer level package: A package includes a device die having a substrate. A molding compound contacts a sidewall of the substrate. A metal pad is over the substrate. A passivation layer has a portion covering an edge portion of the metal pad. A metal pillar is over and contacting the metal pad. A... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130001780 - Multi-component integrated circuit contacts: An integrated circuit connection is describe that includes a first, securing member and a second, connection member. The first member, in an embodiment, is a spike that has a portion of its body fixed in a layer of an integrated circuit structure and extends outwardly from the integrated circuit structure.... Agent: Micron Technology, Inc.

20130001779 - Stack package having flexible conductors: A stack package includes a first package having a first semiconductor chip and a first encapsulation member which seals the first semiconductor chip. A second package is stacked on the first package, and includes a second semiconductor chip and a second encapsulation member which seals the second semiconductor chip. Flexible... Agent: Sk Hynix Inc.

20130001781 - Structures and methods for photo-patternable low-k (pplk) integration: An interconnect structure is provided which includes at least one patterned and cured low-k material located directly on a surface of a substrate; and at least one least one conductively filled region embedded within an interconnect pattern located within the at least one patterned and cured low-k material, wherein the... Agent: International Business Machines Corporation

20130001783 - Interconnect barrier structure and method: A system and method for forming through substrate vias is provided. An embodiment comprises forming an opening in a substrate and lining the opening with a first barrier layer. The opening is filled with a conductive material and a second barrier layer is formed in contact with the conductive material.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130001782 - Laminated high melting point soldering layer and fabrication method for the same, and semiconductor device: The laminated high melting point soldering layer includes: a laminated structure which laminated a plurality of three-layered structures, the respective three-layered structures including a low melting point metal thin film layer and a high melting point metal thin film layers disposed on a surface and a back side surface of... Agent: Rohm Co., Ltd.

20130001784 - Method and structure of forming silicide and diffusion barrier layer with direct deposited film on si: A semiconductor device or a photovoltaic cell having a contact structure, which includes a silicon (Si) substrate; a metal alloy layer deposited on the silicon substrate; a metal silicide layer and a diffusion layer formed simultaneously from thermal annealing the metal alloy layer; and a metal layer deposited on the... Agent: International Business Machines Corporation

20130001785 - Semiconductor device and method for manufacturing same: A semiconductor device includes an interlayer insulating film, a wiring formed on the interlayer insulating film so as to protrude therefrom and made of a material having copper as a main component, and a passivation film formed so as to cover the wiring. The passivation film is made of a... Agent:

20130001786 - Overlapping contacts for semiconductor device: A method of forming overlapping contacts in a semiconductor device includes forming a first contact in a dielectric layer; etching the dielectric layer to form a recess adjacent to the first contact and removing a top portion of the first contact while etching the dielectric layer, wherein a bottom portion... Agent: Globalfoundries Inc.

20130001788 - Semiconductor constructions: Some embodiments include semiconductor processing methods in which a copper barrier is formed to be laterally offset from a copper component, and in which nickel is formed to extend across both the barrier and the component. The barrier may extend around an entire lateral periphery of the component, and may... Agent: Micron Technology, Inc.

20130001787 - Semiconductor device and production method therefor: A semiconductor device includes: a semiconductor substrate; a semiconductor element formed on the semiconductor substrate; a first metal ring surrounding the semiconductor element; an insulation film formed to cover the semiconductor element and having the first metal ring disposed therein; and a groove formed in the insulation film; wherein: the... Agent: Fujitsu Semiconductor Limited

20130001789 - Interconnect structure with improved dielectric line to via electromigration resistant interfacial layer and method of fabricating same: Interconnect structures having improved electromigration resistance are provided that include a metallic interfacial layer (or metal alloy layer) that is present at the bottom of a via opening. The via opening is located within a second dielectric material that is located atop a first dielectric material that includes a first... Agent: International Business Machines Corporation

20130001791 - Method and apparatuses for integrated circuit substrate manufacture: Embodiments described herein provide a method of manufacturing integrated circuit (IC) devices. The method includes coupling a first surface of a first intermediate substrate to a first surface of a second intermediate substrate, forming a first plurality of patterned metal layers on a second surface of the first intermediate substrate... Agent: Broadcom Corporation

20130001792 - Semiconductor device: A power MOSFET for switching and a sense MOSFET having an area smaller than that of the power MOSFET and configured to detect an electric current flowing through the power MOSFET are formed within one semiconductor chip CPH and the semiconductor chip CPH is mounted over a chip mounting part... Agent: Renesas Electronics Corporation

20130001790 - System on a chip with interleaved sets of pads: A system on a chip (SOC) includes a physical interface having first and second sets of interface pads. Interface pads from the first set are interleaved with interface pads from the second set. Additionally, the SOC is arranged for operation with a superset die having first and second personalities and... Agent: Freescale Semiconductor, Inc

20130001794 - In situ-built pin-grid arrays for coreless substrates, and methods of making same: A coreless pin-grid array (PGA) substrate includes PGA pins that are integral to the PGA substrate without the use of solder. A process of making the coreless PGA substrate integrates the PGA pins by forming a build-up layer upon the PGA pins such that vias make direct contact to pin... Agent:

20130001800 - Method of forming package-on-package and device related thereto: Provided is a method of forming a package-on-package. An encapsulation is formed to cover a wafer using a wafer level molding process. The wafer includes a plurality of semiconductor chips and a plurality of through silicon vias (TSVs) passing through the semiconductor chips. The encapsulant may have openings aligned with... Agent: Samsung Electronics Co., Ltd.

20130001801 - Methods to form self-aligned permanent on-chip interconnect structures: Interconnect structures are provided including at least one patterned dielectric layer located on a substrate, wherein said at least one patterned dielectric layer includes differently sized conductive features embedded therein. The differently sized conductive features are laterally adjacent to each other and are located at a same interconnect level.... Agent: Internatioanl Business Machines Corporation

20130001799 - Multi-layer interconnect structure for stacked dies: A multi-layer interconnect structure for stacked die configurations is provided. Through-substrate vias are formed in a semiconductor substrate. A backside of the semiconductor substrate is thinned to expose the through-substrate vias. An isolation film is formed over the backside of the semiconductor substrate and the exposed portion of the through-substrate... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20130001793 - Package interconnects: A method for forming a device is disclosed. A substrate having first and second major surfaces is provided. A stress buffer is formed in the substrate. A through silicon via (TSV) contact is formed between the stress buffer. The stress buffer has a depth less than a depth of the... Agent: Globalfoundries Singapore Pte. Ltd.

20130001797 - Package on package using through substrate vias: A package on package (PoP) employing a through substrate via (TSV) technique in order to reduce the size of a semiconductor chip, has vertically narrow pitches, and forms a higher number of connection terminals. The PoP include a first substrate with a recess disposed in a first surface of the... Agent:

20130001796 - Semiconductor device: A semiconductor device including a plug; a lower insulating film surrounding a lower sidewall of the plug; a spacer surrounding an upper sidewall of the plug; and a first interconnection line on the plug, the lower insulating film, and the spacer, the first interconnection line being in contact with an... Agent:

20130001798 - Semiconductor package: A semiconductor package having a first semiconductor device including an active surface and a non-active surface opposite to the active surface, and a second semiconductor device having an active surface facing the active surface of the first semiconductor device is provided. Connection terminals are provided on the active surface of... Agent: Samsung Electronics Co., Ltd.

20130001795 - Wafer level package and a method of forming the same: A wafer level package is provided. The wafer level package includes at least one chip with at least one electronic component, and at least one connecting chip with at least one through-silicon via, wherein the at least one through-silicon via is electrically coupled to the at least one chip. Further... Agent: Agency For Science, Technology And Research

20130001802 - Semiconductor device including insulating resin film provided in a space between semiconductor chips: A semiconductor device includes a first semiconductor, a second semiconductor, and an insulating resin. The first semiconductor chip includes first and second electrodes formed on first and second surfaces thereof, respectively. The second semiconductor chip includes a third electrode formed on a third surface thereof. The insulating resin film includes... Agent: Elpida Memory, Inc.

20130001803 - Method for attaching a metal surface to a carrier, a method for attaching a chip to a chip carrier, a chip-packaging module and a packaging module: A method for attaching a metal surface to a carrier is provided, the method including: depositing a porous layer over at least one of a metal surface and a side of a carrier; and attaching the at least one of a metal surface and a side of a carrier to... Agent: Infineon Technologies Ag

20130001804 - Semiconductor device and manufacturing method thereof: There are constituted by a tab on which a semiconductor chip is mounted, a sealing portion formed by resin-sealing the semiconductor chip, a plurality of leads each having a mounted surface exposed to a peripheral portion of a rear surface of the sealing portion and a sealing-portion forming surface disposed... Agent: Renesas Electronics Corporation

20130001805 - Power semiconductor module: The respective main electrodes of the semiconductor switching elements such as IGBTs, which are respectively mounted on the plurality of insulating boards, are electrically connected to each other via the conductor member. This configuration makes it possible to suppress the occurrence of the resonant voltage due to the junction capacity... Agent:

20130001806 - Fabrication process and device of multi-chip package having spliced substrates: Disclosed are a fabrication process and a device of a multi-chip package having spliced substrates, characterized in utilizing an incomplete substrate and a substrate block with different dimensions to combine as a spliced complete substrate during the fabrication process. Two kinds of chips with different functions, including memory and controller,... Agent:

20130001807 - Method of flip-chip hybridization for the forming of tight cavities and systems obtained by such a method: A method for manufacturing a microelectronic assembly including stacked first and second microelectronic components having a cavity therebetween including defining said cavity by means of a lateral wall forming a closed frame extending around a determined area of the first component except for an opening used as a vent; forming... Agent: Commissariat A L'energie Atomique Et Aux Energies Alternatives

20130001808 - Encapsulation device having improved sealing: An encapsulation device including two casings made of a flexible polymer material, each delimiting a sealed space, and at least one hydrophobic material filling each of the casings, the casings being stacked and sealingly interconnected at peripheral edges thereof, a sealed space then being defined between the two casings for... Agent: Commissariat A L'energie Atomique Et Aux Energies Alternatives

20130001809 - Ferroelectric devices including a layer having two or more stable configurations: Ferroelectric semiconductor devices are provided by including a ferroelectric layer in the device that is made of a material that is not ferroelectric in bulk. Such layers can be disposed at interfaces to promote ferroelectric switching in a semiconductor device. Switching of conduction in the semiconductor is effected by the... Agent:

20130001810 - Method of manufacturing a part of a mems system: A method of manufacturing a bonded body of a semiconductor substrate and a semiconductor device to be mounted on the semiconductor substrate are provided. The method includes: preparing a first base member and a second base member; imparting liquid repellency for a liquid material to at least a part of... Agent: Seiko Epson Corporation