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Active solid-state devices (e.g., transistors, solid-state diodes) December patent applications/inventions, industry category 12/12

20120326109 - Phase change memory cell and phase chage memory: A phase change memory cell includes a first circuit and a second circuit. The first circuit comprises a first electrode, a carbon nanotube layer and a second electrode electrically connected in series. The first circuit is adapted to write data into the phase change memory cell or reset the phase... Agent: Tsinghua University

20120326110 - Phase change memory devices and methods of manufacturing the same: A phase change memory device includes an impurity region on a substrate, the impurity region being in an active region, a metal silicide pattern at least partially buried in the impurity region, a diode on the impurity region, a lower electrode on the diode, a phase change layer pattern on... Agent:

20120326111 - Ge-rich gst-212 phase change memory materials: A phase change material comprises GexSbyTez, wherein a Ge atomic concentration x is within a range from 30% to 65%, a Sb atomic concentration y is within a range from 13% to 27% and a Te atomic concentration z is within a range from 20% to 45%. A Ge-rich family... Agent: Macronix International Co., Ltd.

20120326112 - Phase-change random access memory device and method of manufacturing the same: A phase-change random access memory (PCRAM) device and a method of manufacturing the same are provided. The PCRAM device includes a semiconductor substrate, a junction word line formed on the semiconductor substrate, an epitaxial word line formed on the junction word line, and a switching device formed on the epitaxial... Agent:

20120326113 - Non-volatile memory element and non-volatile memory device equipped with same: Provided are a non-volatile memory element which can reduce a voltage of an electric pulse required for initial breakdown, and can lessen non-uniformity of a resistance value of the non-volatile memory element, and a non-volatile memory device including the non-volatile memory element. A non-volatile memory element comprises a first electrode... Agent:

20120326114 - Phase-change random access memory device and method of manufacturing the same: A phase-change random access memory device includes a semiconductor substrate, an interlayer dielectric layer formed over the semiconductor substrate and having contact holes defined therein, metal contacts formed in the contact holes, an ohmic contact layer formed over the metal contacts and having recesses defined therein, and switching elements formed... Agent:

20120326115 - Graphene structure and method of manufacturing the graphene structure, and graphene device and method of manufacturing the graphene device: A graphene structure and a method of manufacturing the graphene structure, and a graphene device and a method of manufacturing the graphene device. The graphene structure includes a substrate; a growth layer disposed on the substrate and having exposed side surfaces; and a graphene layer disposed on the side surfaces... Agent: Samsung Electronics Co., Ltd.

20120326116 - Semiconductor device and method of manufacturing a semiconductor device: A semiconductor structure with a waveguide, the semiconductor structure has a plurality of layers, at least one of which being partially laterally oxidised, said laterally oxidised material modifying the lateral effective refractive index with said structure in order to form a waveguide within the structure, the structure also has a... Agent: Kabushiki Kaisha Toshiba

20120326119 - Light emitting display device having nanowire: The invention is a light emitting display device having a nanowire that emits light when an electric current is applied. The disclosed light emitting display device comprises: a nanowire light emitting element electrically connected to a first power line; a driving transistor electrically connected between the light emitting element and... Agent: Kyonggi University Industry & Academia Cooperation Foundation

20120326118 - Semiconductor light emitting device and method for manufacturing the same: In one embodiment, a semiconductor light emitting device includes a substrate, an electrically-conductive reflection film, an active region, a first electrode, a transparent conductive film and a second electrode. In the active region, a first transparent electrode, a first conductivity type contact layer, a light emitting layer, a second conductivity... Agent: Kabushiki Kaisha Toshiba

20120326117 - Semiconductor light emmiting device: According to one embodiment, in a semiconductor light emitting device, a semiconductor laminated body is made by laminating a first semiconductor layer of a first conductivity type having a first sheet resistance, a light emitting layer, and a second semiconductor layer of a second conductivity type and includes a cutout... Agent: Kabushiki Kaisha Toshiba

20120326120 - Transparent led wafer module and method for manufacturing same: A transparent LED wafer module and a method for manufacturing the same are provided. In a conductor LED device epitaxial process, the conductor LED device is grown on a transparent material wafer, where both surfaces of the conductor LED device are entirely grown on the transparent material, and then a... Agent:

20120326121 - Vapor deposition system, method of manufacturing light emitting device and light emitting device: When a vapor deposition system according to an aspect of the invention is used, a semiconductor layer being thereby grown has excellent crystalline quality, thereby improving the performance of a light emitting device. Furthermore, while the operational capability and productivity of the vapor deposition system are improved, deterioration in an... Agent:

20120326122 - Epitaxial wafer, photodiode, optical sensor device, and methods for producing epitaxial wafer and photodiode: The production method includes a step of growing an antimony (Sb)-containing layer on a substrate 1 by metal-organic vapor phase epitaxy using only metal-organic sources; and a step of growing, on the antimony-containing layer, an antimony-free layer including a window layer 5, wherein, from the growth of the antimony-containing layer... Agent: Sumitomo Electric Industries, Ltd.

20120326123 - Apparatus and methods for improving parallel conduction in a quantum well device: Embodiments of an apparatus and methods of providing a quantum well device for improved parallel conduction are generally described herein. Other embodiments may be described and claimed.... Agent:

20120326124 - Frontside-illuminated inverted quantum well infrared photodetector devices: A method of fabricating a frontside-illuminated inverted quantum well infrared photodetector may include providing a quantum well wafer having a bulk substrate layer and a quantum material layer, wherein the quantum material layer includes a plurality of alternating quantum well layers and barrier layers epitaxially grown on the bulk substrate... Agent: L-3 Communications Cincinnati Electronics Corporation

20120326125 - Deposition on a nanowire using atomic layer deposition: A semiconductor device includes a substrate, a nanowire, a first structure, and a second structure. The nanowire is suspended between the first structure and the second structure, where the first structure and the second structure overly the substrate, where the nanowire includes a layer on a surface of the nanowire,... Agent: International Business Machines Corporation

20120326127 - Collapsable gate for deposited nanostructures: A disposable material layer is first deposited on a graphene layer or a carbon nanotube (CNT). The disposable material layer includes a material that is less inert than graphene or CNT so that a contiguous dielectric material layer can be deposited at a target dielectric thickness without pinholes therein. A... Agent: International Business Machines Corporation

20120326126 - Graphene or carbon nanotube devices with localized bottom gates and gate dielectric: Transistor devices having nanoscale material-based channels (e.g., carbon nanotube or graphene channels) and techniques for the fabrication thereof are provided. In one aspect, a transistor device is provided. The transistor device includes a substrate; an insulator on the substrate; a local bottom gate embedded in the insulator, wherein a top... Agent: International Business Machines Corporation

20120326128 - Graphene-layered structure, method of preparing the same, and transparent electrode and transistor including graphene-layered structure: A method of directly growing graphene of a graphene-layered structure, the method including ion-implanting at least one ion of a nitrogen ion and an oxygen ion on a surface of a silicon carbide (SiC) thin film to form an ion implantation layer in the SiC thin film; and heat treating... Agent: Samsung Electronics Co., Ltd.

20120326129 - Metal-free integrated circuits comprising graphene and carbon nanotubes: An integrated circuit includes a graphene layer, the graphene layer comprising a region of undoped graphene, the undoped graphene comprising a channel of a transistor, and a region of doped graphene, the doped graphene comprising a contact of the transistor; and a gate of the transistor, the gate comprising a... Agent: International Business Machines Corporation

20120326130 - Josephson quantum computing device and integrated circuit using such devices: A Josephson quantum computing device and an integrated circuit using Josephson quantum computing devices which can realize a NOT gate operation controlled with 2 bits will be provided. The Josephson quantum computing device (1) comprises: a superconducting ring member (10) having a π-junction (6) and a 0-junction (7); and a... Agent: Japan Science And Technology Agency

20120326138 - Heterocyclic compound and organic light-emitting device including the same: J

20120326134 - Heterocyclic compound and organic light-emitting diode and flat display device including the heterocyclic compound: A heterocyclic compound, an organic light-emitting diode, and a flat display device, the heterocyclic compound being represented by Formula 1, below:... Agent:

20120326135 - Heterocyclic compound and organic light-emitting diode and flat display device including the heterocyclic compound: A heterocyclic compound, an organic light-emitting diode, and a flat display device, the heterocyclic compound being represented by Formula 1, below:... Agent:

20120326136 - Materials and methods for controlling properties of organic light-emitting device: The present teachings provide methods for depositing and patterning organic light-emitting device (OLED) buffer layers. The method can use a thermal printing process and one or more additional processes, such as vacuum thermal evaporation (VTE), to create an OLED stack. OLED stack structures are also provided wherein which at least... Agent: Kateeva, Inc.

20120326139 - Materials and methods for controlling properties of organic light-emitting device: The present teachings provide methods for forming organic layers for an organic light-emitting device (OLED) using an inkjet printing or thermal printing process. The method can further use one or more additional processes, such as vacuum thermal evaporation (VTE), to create an OLED stack. OLED stack structures are also provided... Agent: Kateeva, Inc.

20120326133 - Novel compound and organic light-emitting device including the same: e

20120326141 - Organic electroluminescent device: The present invention relates to organic electro-luminescent devices which in a hole transport layer have a mixture of two or more materials.... Agent: Merck Patent Gmbh

20120326131 - Organic light emitting diode display: A solar cell integrated organic light emitting diode (OLED) display is disclosed. In one embodiment, the organic light emitting diode (OLED) display includes i) a substrate, ii) an organic light emitting element formed on the substrate and including a reflection electrode, an organic emission layer, and a transparent electrode sequentially... Agent: Samsung Mobile Display Co., Ltd.

20120326142 - Organic light emitting diodes having increased illumination: OLEDs having increased illumination are disclosed. The OLEDs have light emitting layers with periodic grain sizes. In particular, by depositing smaller particles at the boundaries of the emitting layers, the injection rate of carriers is improved in the emitting layers and by depositing larger particles in the middle of the... Agent:

20120326132 - Organic light emitting element: An organic light emitting element includes a first electrode, a second electrode, and an organic layer. The organic layer includes a first emission layer between the first electrode and the second electrode, a second emission layer between the first emission layer and the second electrode, and an electron injection layer... Agent:

20120326137 - Organic light-emitting diode and flat display device including the same: An organic light-emitting diode including a first electrode; a second electrode facing the first electrode; an emission layer interposed between the first electrode and the second electrode; a first hole transport layer including a first hole transporting compound; a second hole transport layer including a second hole transporting compound, the... Agent:

20120326140 - Polymer compound and light-emitting device using same: [In formula (1), R1A, R1B, R2A, R2B represent an unsubstituted alkyl group, R3 and R4 represented an unsubstituted or substituted alkyl group, an unsubstituted or substituted alkoxy group, an unsubstituted or substituted aryl group, an unsubstituted or substituted aryloxy group, an unsubstituted or substituted heterocyclic group, an unsubstituted or substituted... Agent: Sumitomo Chemical Company, Limited

20120326145 - Light emitting device and electronic device: An object is to provide a highly reliable light emitting device which is thin and is not damaged by external local pressure. Further, another object is to manufacture a light emitting device with a high yield by preventing defects of a shape and characteristics due to external stress in a... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120326143 - Light-emitting device and manufacturing method of the light-emitting device: A light-emitting device in which reduction in performance due to moisture is suppressed is provided. The light-emitting device has a structure in which a partition having a porous structure surrounds each of light-emitting elements. The partition having a porous structure physically adsorbs moisture; therefore, in the light-emitting device, the partition... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120326144 - Thin film transistor substrate and method for manufacturing same: A method includes: a step of forming a gate electrode (14) on a substrate (10a); a step of forming a gate insulating film (15) to cover the gate electrode (14), and then forming an In-Ga-Zn-O-based oxide semiconductor layer (16) in which a ratio of In:Ga:Zn in atomic % is 1:1:1... Agent: Sharp Kabushiki Kaisha

20120326146 - Sacrificial wafer probe pads through seal ring for electrical connection to circuit inside an integrated circuit: The disclosure is directed to a semiconductor wafer, integrated circuit product, and method of making same, having multiple non-singulated chips separated by scribe lines, comprising a plurality of seal rings, each seal ring surrounding a corresponding chip and disposed between the corresponding chip and adjacent scribe lines. Well resistors are... Agent: Broadcom Corporation

20120326147 - Semiconductor chip, method of manufacturing the same, and semiconductor package: Provided is a semiconductor chip in which a first rewiring connection part located in the peripheral electrode pad or relatively close to the peripheral electrode pad in the V/G line and a second rewiring connection part located relatively distant from the peripheral electrode pad in the V/G line and having... Agent: Renesas Electronics Corporation

20120326148 - Thin film transistor array panel and manufacturing method thereof: A thin film transistor array panel and a manufacturing method therefor. A shorting bar for connecting a thin film transistor with data lines is formed separate from the data lines, and then the data lines and the shorting bar are connected through a connecting member. As a result, all the... Agent:

20120326149 - Protecting semiconducting oxides: In transistor structures such as thin film transistors (TFTs) in an array of cells, a layer of semiconducting oxide material that includes a channel is protected by a protective layer that includes low-temperature encapsulant material. The semiconducting oxide material can be a transition metal oxide material such as zinc oxide,... Agent: Palo Alto Research Center Incorporated

20120326151 - Display device and method of manufacturing the same: A display device includes: an insulating substrate comprising a first region and a second region; a thin-film transistor (TFT) formed on the first region comprising a gate electrode, a source electrode, and a drain electrode; and a storage capacitor formed on the second region, wherein the storage capacitor comprises a... Agent: Samsung Mobile Display Co., Ltd.

20120326154 - Manufacturing method of thin film transistor and thin film transistor, and display: A method of making a thin film transistor made of a stack of an organic semiconductor layer, a gate insulating film and a gate electrode in this order on a substrate, which includes the steps of pattern coating a gate electrode material on the gate insulating film by printing; and... Agent: Sony Corporation

20120326150 - Organic light emitting display device and method for manufacturing the same: An exemplary embodiment may include a substrate, an insulating layer on the substrate, and a pixel electrode including a transparent conductive layer on the insulating layer. A portion of a surface of the insulating layer contacting the transparent conductive layer has a plurality of recessed holes formed by etching with... Agent:

20120326153 - Thin film transistor array panel with overlapping floating electrodes and pixel electrodes: According to an embodiment of the present invention, a thin film transistor array panel includes a gate line and a data line insulated from each other an insulating substrate where the gate line and the data line cross each other to define a pixel region, a thin film transistor (TFT)... Agent: Samsung Electronics Co., Ltd.

20120326152 - Thin film transistor substrate, display panel having the same and method of manufacturing: A thin film transistor substrate includes a base substrate; a first insulating layer disposed on the base electrode; source and drain electrodes disposed on the first insulating layer to be spaced apart from each other; a semiconductor layer disposed on the source electrode, the drain electrode, and the first insulating... Agent:

20120326155 - Semiconductor structure and method for manufacturing the same: The present application discloses a semiconductor structure and method for manufacturing the same. The semiconductor structure comprises: an SOI substrate and a MOSFET formed on the SOI substrate, wherein the SOI substrate comprises, in a top-down fashion, an SOI layer, a first buried insulator layer, a buried semiconductor layer, a... Agent:

20120326156 - Organic light-emitting display apparatus and method of manufacturing organic light-emitting display apparatus: An organic light-emitting display apparatus includes a substrate, a thin-film transistor (TFT) on the substrate, the TFT including an active layer, a gate electrode, a source electrode, and a drain electrode, a first insulating film between the gate electrode and the source electrode and between the gate electrode and the... Agent:

20120326158 - Flat panel display and method of manufacturing the same: A flat panel display having a thin-film transistor (TFT) and a pixel unit and a method of manufacturing the same are disclosed. In one embodiment, the method includes forming a step difference layer having a relatively high step and a relatively low step on a substrate and forming an amorphous... Agent: Samsung Mobile Display Co., Ltd.

20120326157 - Method of manufacturing thin film transistor, thin film transistor manufactured using the method, method of manufacturing organic light-emitting display apparatus, and organic light-emitting display apparatus manufactured using the method: A method of manufacturing a TFT, including forming a buffer layer, an amorphous silicon layer, an insulating layer, and a first conductive layer on a substrate, forming a polycrystalline silicon layer by crystallizing the amorphous silicon layer, forming a semiconductor layer, a gate insulating layer, and a gate electrode that... Agent: Samsung Mobile Display Co., Ltd.

20120326159 - Led structure with enhanced mirror reflectivity: Embodiments of the present invention are generally related to LED chips having improved overall emission by reducing the light-absorbing effects of barrier layers adjacent mirror contacts. In one embodiment, a LED chip comprises one or more LEDs, with each LED having an active region, a first contact under the active... Agent: Cree, Inc.

20120326161 - Nitride semiconductor element and manufacturing method therefor: An exemplary nitride-based semiconductor device includes: a semiconductor multilayer structure 20 which includes a p-type semiconductor region with a surface 12 being inclined from the m-plane by an angle of not less than 1° and not more than 5° or the principal surface has a plurality of m-plane steps; and... Agent: Panasonic Corporation

20120326160 - Semiconductor device having nitride semiconductor layer: A semiconductor device includes a silicon substrate, an aluminum nitride layer which is arranged on the silicon substrate and has a region where silicon is doped thereof as an impurity, a buffer layer which is arranged on the aluminum nitride layer and has a structure where a plurality of nitride... Agent: Sanken Electric Co., Ltd.

20120326164 - Betavoltaic apparatus and method: An exemplary thinned-down betavoltaic device includes an N+ doped silicon carbide (SiC) substrate having a thickness between about 3 to 50 microns, an electrically conductive layer disposed immediately adjacent the bottom surface of the SiC substrate; an N− doped SiC epitaxial layer disposed immediately adjacent the top surface of the... Agent: Cornell University

20120326165 - Hemt including ain buffer layer with large unevenness: A HEMT comprised of nitride semiconductor materials is disclosed. The HEMT includes, on a SiC substrate, a AlN buffer layer, a GaN channel layer, and a AlGaN doped layer. A feature of the HEMT is that the AlN buffer layer is grown on an extraordinary condition of the pressure, and... Agent: Sumitomo Electric Industries, Ltd.

20120326162 - Process for forming repair layer and mos transistor having repair layer: A repair layer forming process includes the following steps. Firstly, a substrate is provided, and a gate structure is formed on the substrate, wherein the gate structure at least includes a gate dielectric layer and a gate conductor layer. Then, a nitridation process is performed to form a nitrogen-containing superficial... Agent: United Microelectronics Corp.

20120326166 - Semiconductor device and method for manufacturing same: A substrate has a surface made of a semiconductor having a hexagonal single-crystal structure of polytype 4H. The surface of the substrate is constructed by alternately providing a first plane having a plane orientation of (0-33-8), and a second plane connected to the first plane and having a plane orientation... Agent: Sumitomo Electric Industries, Ltd.

20120326167 - Semiconductor device and method of manufacturing the same: A silicon carbide substrate has a substrate surface. A gate insulating film is provided to cover a part of the substrate surface. A gate electrode covers a part of the gate insulating film. A contact electrode is provided on the substrate surfaces, adjacent to and in contact with the gate... Agent: Sumitomo Electric Industries, Ltd.

20120326163 - Semiconductor device with increased channel mobility and dry chemistry processes for fabrication thereof: Embodiments of a semiconductor device having increased channel mobility and methods of manufacturing thereof are disclosed. In one embodiment, the semiconductor device includes a substrate including a channel region and a gate stack on the substrate over the channel region. The gate stack includes an alkaline earth metal. In one... Agent: Cree, Inc.

20120326168 - Transistor with buried silicon germanium for improved proximity control and optimized recess shape: A method of forming a semiconductor device that includes providing a substrate including a semiconductor layer on a germanium-containing silicon layer and forming a gate structure on a surface of a channel portion of the semiconductor layer. Well trenches are etched into the semiconductor layer on opposing sides of the... Agent: International Business Machines Corporation

20120326169 - Method for manufacturing semiconductor light emitting element, semiconductor light emitting element, lamp, electronic device and mechanical apparatus: Provided is a method for manufacturing a semiconductor light emitting element (1) in which a defect is less likely to occur in a light emitting layer and a p-type semiconductor layer due to the surface of a second n-type semiconductor layer and which is capable of obtaining a high output.... Agent: Showa Denko K.k.

20120326170 - Wafer level molded opto-couplers: Optocoupler packages and methods of making the same. An exemplary package comprises a substrate having a first surface, a second surface opposite the first surface, and a body of electrically insulating material disposed between the first and second surfaces; a first optoelectronic device embedded in the body of electrically insulating... Agent:

20120326176 - Display device and fabrication method for display device: A capacitor unit in a display device includes: a capacitor element having a first capacitor electrode connected to a power line and provided in a GM electrode layer and a second capacitor electrode connected to a line and provided in an SD electrode layer; a backup capacitor element having a... Agent: Panasonic Corporation

20120326177 - Display device and fabrication method for display device: A display device capable of suppressing decrease in capacitance and capable of reducing area even when a capacitor unit is repaired is provided. A capacitor unit in a display device includes: a capacitor element having a first capacitor electrode connected to a power line and provided in an SD electrode... Agent: Panasonic Corporation

20120326179 - Display device and manufacturing method of the display device: The MEMS shutter includes a shutter having an aperture part, a first spring connected to the shutter, a first anchor connected to the first spring, a second spring and a second anchor connected to the second spring, an insulation film on a surface of the shutter, the first spring, the... Agent: Hitachi Displays, Ltd.

20120326182 - Image display apparatus and image display apparatus manufacturing method: Provided is an image display apparatus in which color breakup of a reflection image formed from reflected ambient light may be reduced to suppress the influence of an ambient environment. The image display apparatus includes multiple pixels. Each of the pixels includes a light-emitting layer and a structure layer having... Agent: Canon Kabushiki Kaisha

20120326175 - Led package and method for making the same: An LED package includes a substrate with two opposite lateral bulging portions, an LED die, an electrode structure, and a reflective layer. The substrate includes a first substrate and a second substrate stacked together; the first substrate and the second substrate are transparent; and the substrate includes an emitting surface... Agent: Advanced Optoelectronic Technology, Inc.

20120326183 - Light emitting device package: A light emitting device package is provided. The light emitting device package may include a main body having a cavity including side surfaces and a bottom, and a first reflective cup and a second reflective cup provided in the bottom of the cavity of the main body and separated from... Agent: Lg Innotek Co., Ltd.

20120326181 - Light emitting device, method for manufacturing light emitting device, illuminating device, and backlight: In a light emitting device, one hundred or more bar-like structured light emitting elements (210) each having a light emitting area of 2,500π μm2 or less are placed on a mounting surface of one insulating substrate (200), so that the light emitting device fulfills little variation in luminance, long life,... Agent: Sharp Kabushiki Kaisha

20120326173 - Light emitting diode element, method of fabrication and light emitting device: A light emitting diode comprises a multi-layer semiconductor, a first electrode and a second electrode. The multi-layer semiconductor has a light emitting active layer substantially perpendicular to the predetermined surface, a first semiconductor layer located on a surface of the light emitting active layer and a second semiconductor layer located... Agent:

20120326171 - Light emitting diode having electrode pads: The present invention relates to light-emitting diodes. A light-emitting diode according to an exemplary embodiment of the present invention includes a first group including a plurality of first light emitting cells connected in parallel to each other, and a second group including a plurality of second light emitting cells connected... Agent: Seoul Opto Device Co., Ltd.

20120326180 - Light-emitting element, display and display device: A light-emitting element of the present invention includes (i) a light-emitting layer (109), (ii) an electrode layer (110) being transparent to part of light emitted from the light-emitting layer (109), (iii) color converting layers (113, 114), and (iv) a transparent layer (115). The color converting layers (113, 114) and the... Agent: Sharp Kabushiki Kaisha

20120326172 - Liquid crystal display and method for manufacturing the same: Provided is a liquid crystal display including: a first substrate; a thin film transistor disposed on the first substrate; a passivation layer disposed on the thin film transistor and comprising a contact hole exposing an electrode of the thin film transistor; a pixel electrode disposed on the passivation layer and... Agent: Samsung Electronics Co., Ltd.

20120326178 - Optoelectronic component and method for producing an optoelectronic component: An optoelectronic component includes at least one inorganic optoelectronically active semiconductor component having an active region that emits or receives light during operation, and a sealing material applied by atomic layer deposition on at least one surface region, the sealing material covering the surface region in a hermetically impermeable manner.... Agent: Osram Opto Semiconductors Gmbh

20120326174 - Organic light-emitting display device and method of manufacturing the same: A method of manufacturing an organic light-emitting display device includes forming a gate electrode including a lower gate electrode on a gate insulating layer and an upper gate electrode on the lower gate electrode; forming a source region and a drain region at a semiconductor active layer using the gate... Agent:

20120326184 - Led lighting fixture and the manufacturing method thereof: A LED (Light-Emitting Diode) lighting fixture and a manufacturing method thereof are disclosed. The LED lighting fixture comprises a LED module generating light at a wavelength range of 300-700 nm, a lamp cover shielding the LED module, and a phosphor layer. The phosphor layer which is coated on an inner... Agent: Wellypower Optronics Corporation

20120326185 - Light emitting device: A light emitting device including a carrying element having two electric conductors connectable to a power source, a light emitting element disposed on the carrying element and electrically connected to the two electric conductors, and at least one correction element electrically connected to the light emitting element, wherein the light... Agent: Epistar Corporation

20120326190 - Anode containing metal oxide and organic light emitting device having the same: An anode for an organic light emitting device which introduces a metal oxide to improve flows of charges, and an organic light emitting device using the anode. The anode for the organic light emitting device has excellent charge injection characteristics, thereby improving power consumption of the organic light emitting device.... Agent: Samsung Mobile Display Co., Ltd.

20120326189 - Electrode including magnetic material and organic light emitting device including the electrode: An electrode, which includes a magnetic material to improve the flow of charges, and an organic light emitting device using the electrode. The electrode for the organic light emitting device has an excellent charge injection property, so that it is possible to improve the efficiency of light emission of the... Agent: Samsung Mobile Display Co., Ltd.

20120326197 - Led encapsulation resin body, led device, and method for manufacturing led device: An LED encapsulation resin body disclosed in the present application includes: a phosphor; a heat resistance material arranged on, or in the vicinity of, a surface of the phosphor; and a silicone resin in which the phosphor with the heat resistance material arranged thereon is dispersed.... Agent: Panasonic Corporation

20120326195 - Led module and manufacturing method thereof: There is provided a manufacturing method of an LED module including: forming an insulating film on a substrate; forming a first ground pad and a second ground pad separated from each other on the insulating film; forming a first division film that fills a space between the first and second... Agent: Daewon Innost Co., Ltd.

20120326193 - Light emitting device module: Disclosed is a light emitting device module. The light emitting device module includes a first lead frame and a second lead frame electrically separated from each other, a light emitting device electrically connected to the first lead frame and the second lead frame, the light emitting device includes a light... Agent:

20120326192 - Materials and methods for organic light-emitting device microcavity: The present teachings provide methods for forming organic layers for an organic light-emitting device (OLED) using a thermal printing process. The method can further use one or more additional processes, such as vacuum thermal evaporation (VTE), to create an OLED stack. OLED stack structures are also provided wherein at least... Agent: Kateeva, Inc.

20120326194 - Organic light emitting diode display and manufacturing method thereof: An OLED display according to an exemplary embodiment includes: a substrate; an organic light emitting diode formed on the substrate; an overcoat covering the organic light emitting diode; and a patterned metal sheet attached on the overcoat and having a plurality of protrusion and depression portions. A plurality of protrusions... Agent:

20120326196 - Phosphor and leds containing same: There is herein described a phosphor for use in LED applications and particularly in phosphor-conversion LEDs (pc-LEDs). The phosphor has a composition represented by (Y1-xCex)3(Al1-yScy)5O12 wherein 0<x<=0.04 and 0<y<=0.6 and can be as applied to an LED as a transparent sintered ceramic or used in a powder form. By adjusting... Agent: Osram Sylvania, Inc.

20120326188 - Reflective pockets in led mounting: An LED device with improved LED efficiency is presented. An LED die is positioned within a pocket formed by a substrate and an opening in a supporting layer arranged thereon. The increase in the LED efficiency is achieved by providing a device where at least a portion of the pocket... Agent:

20120326191 - Semiconductor light-emitting device: A semiconductor light emitting device, including a substrate, an epitaxy layer and an interference thin film is provided. The substrate has a first surface and a second surface opposite to the first surface. The epitaxy layer is disposed on the first surface. The interference thin film is disposed on the... Agent: Lextar Electronics Corporation

20120326187 - Solid state lighting devices with improved current spreading and light extraction and associated methods: Solid state lighting (“SSL”) devices with improved current spreading and light extraction and associated methods are disclosed herein. In one embodiment, an SSL device includes a solid state emitter (“SSE”) that has a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active... Agent: Micron Technology, Inc.

20120326186 - Method for producing a luminescence conversion element, luminescence conversion element and optoelectronic component: A method is provided for producing a luminescence conversion element (4), in particular for an optoelectronic component. In the method a raw material (1) is provided, which is intended for further processing to yield the ceramic material and which contains luminescent material particles and a binder material. A blank is... Agent: Osram Opto Semiconductors Gmbh

20120326200 - Flip-chip light emitting diode and method for making the same: A flip-chip light emitting diode comprising: a substrate; a circuit layer formed on the substrate, the circuit layer comprising a first electrode and a second electrode separated and electrically insulated from the first electrode; an LED chip arranged on the circuit layer, the LED chip comprising a positive electrode and... Agent: Advanced Optoelectronic Technology, Inc.

20120326198 - Led structure: A light emitting diode (LED) structure comprises a first dopant region, a dielectric layer on top of the first dopant region, a bond pad layer on top of a first portion the dielectric layer, and an LED layer having a first LED region and a second LED region. The bond... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120326203 - Light emitting apparatus and light unit having the same: Provides are a light emitting apparatus and a light unit having the same. The light emitting apparatus comprises a light emitting device comprising a light emitting element and a plurality of external leads, and a plurality of electrode pads under the light emitting device.... Agent:

20120326199 - Light emitting device and light emitting device package: Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, a first electrode on... Agent:

20120326201 - Light-emitting panel, light-emitting device using the light-emitting panel, and method for manufacturing the light-emitting panel: To provide a light-emitting panel in which the occurrence of crosstalk is suppressed. To provide a method for manufacturing a light-emitting panel in which the occurrence of crosstalk is suppressed. The light-emitting panel includes a first electrode of one light-emitting element, a first electrode of the other light-emitting element, and... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120326202 - Photoelectric transmitting or receiving device and manufacturing method thereof: A photoelectric transmitting or receiving device comprises a substrate, a first conductive layer, a second conductive layer and a photoelectric transducing chip. The substrate has an upper surface and a recess and is made of a composite material. The first conductive layer and the second conductive layer are formed by... Agent: Everlight Electronics Co., Ltd.

20120326204 - Organic light emitting diode lighting apparatus: An organic light emitting diode lighting apparatus is disclosed. In one embodiment, the apparatus includes: a substrate main body, an organic light emitting element formed on the substrate main body and a sealing cap bonded with the substrate main body and covering and sealing the organic light emitting element. The... Agent: Samsung Mobile Display Co., Ltd.

20120326205 - Method for producing group iii nitride semiconductor light-emitting device: An MQW-structure light-emitting layer is formed by alternately stacking InGaN well layers and AlGaN barrier layers. Each well layer and each barrier layer are formed so as to satisfy the following relations: 12.9≦−2.8x+100y≦37 and 0.65≦y≦0.86, or to satisfy the following relations: 162.9≦7.1x+10z≦216.1 and 3.1≦z≦9.2, here x represents the Al compositional... Agent: Toyoda Gosei Co., Ltd.

20120326206 - Devices with zener triggered esd protection: Electrostatic discharge (ESD) protection clamps for I/O terminals of integrated circuit (IC) cores comprise a bipolar transistor with an integrated Zener diode coupled between the base and collector of the transistor. Variations in clamp voltage in different parts of the same IC chip or wafer caused by conventional deep implant... Agent: Freescale Semiconductor, Inc.

20120326207 - Semiconductor device and manufacturing method: A semiconductor device includes a first-conductivity-type semiconductor layer including an active region in which a transistor having impurity regions is formed and a marginal region surrounding the active region, a second-conductivity-type channel layer formed between the active region and the marginal region and forming a front surface of the semiconductor... Agent: Rohm Co., Ltd.

20120326208 - Pressure contact semiconductor device: A pressure contact semiconductor device includes a cathode post electrode and a gate electrode formed on a top surface of a substrate, an anode post electrode formed on a bottom surface thereof, a circuit substrate, a cathode flange overlapping the cathode post electrode and connected to the circuit substrate, a... Agent: Mitsubishi Electric Corporation

20120326209 - Semiconductor device and method of producing the same: To provide a semiconductor device including a functional laminate having flatness and crystallinity improved by effectively passing on the crystallinity and flatness improved in a buffer to the functional laminate, and to provide a method of producing the semiconductor device; in the semiconductor device including the buffer and the functional... Agent: Dowa Electronics Materials Co., Ltd.

20120326210 - Method of making semiconductor materials and devices on silicon substrate: A crystalline structure comprising a substrate, which has a surface. The surface has one or more wells formed therein defining one or more growing area and at least one layer of dissimilar crystalline material epitaxially grown on the growing area. A method of making a crystalline structure having a low... Agent:

20120326211 - Bipolar high electron mobility transistor and methods of forming same: An epilayer structure includes a field-effect transistor structure and a heterojunction bipolar transistor structure. The heterojunction bipolar transistor structure contains an n-doped subcollector and a collector formed in combination with the field-effect transistor structure, wherein at least a portion of the subcollector or collector contains Sn, Te, or Se. In... Agent:

20120326212 - High k gate stack on iii-v compound semiconductors: A method of forming a high k gate stack on a surface of a III-V compound semiconductor, such GaAs, is provided. The method includes subjecting a III-V compound semiconductor material to a precleaning process which removes native oxides from a surface of the III-V compound semiconductor material; forming a semiconductor,... Agent: International Business Machines Corporation

20120326213 - Microwell structures for chemically-sensitive sensor arrays: Methods and apparatus relating to FET arrays for monitoring chemical and/or biological reactions such as nucleic acid sequencing-by-synthesis reactions. Some methods provided herein relate to improving signal (and also signal to noise ratio) from released hydrogen ions during nucleic acid sequencing reactions.... Agent: Life Technologies Corporation

20120326216 - Devices and methods to optimize materials and properties for replacement metal gate structures: Devices and methods for device fabrication include forming a gate structure with a sacrificial material. Silicided regions are formed on source/drain regions adjacent to the gate structure or formed at the bottom of trench contacts within source/drain areas. The source/drain regions or the silicided regions are processed to build resistance... Agent: International Business Machines Corporation

20120326215 - Method for fabrication of iii-nitride device and the iii-nitride device thereof: A III-nitride device is provided comprising a semiconductor substrate; a stack of active layers on the substrate, each layer comprising a III-nitride material; a gate, a source and a drain contact on the stack, wherein a gate, a source and a drain region of the substrate are projections of respectively... Agent: Imec

20120326214 - Semiconductor device and method for fabricating the same: A semiconductor device includes: a semiconductor substrate including an active region defined by an isolation layer; a gate line defining a bit line contact region in the active region and extending in one direction; a dielectric layer covering the semiconductor substrate and the gate line formed in the semiconductor substrate;... Agent:

20120326217 - Semiconductor device including multiple metal semiconductor alloy region and a gate structure covered by a continuous encapsulating layer: A method of forming a semiconductor device is provided that in some embodiments encapsulates a gate silicide in a continuous encapsulating material. By encapsulating the gate silicide in the encapsulating material, the present disclosure substantially eliminates shorting between the gate structure and the interconnects to the source and drain regions... Agent: International Business Machines Corporation

20120326218 - 6f2 dram cell: A 6F2 DRAM cell with paired cells is described. In one embodiment the cell pairs are separated by n-type isolation transistors having gates defining dummy word lines. The dummy word lines are fabricated from a metal with a work function favoring p-channel devices.... Agent:

20120326219 - Dynamic memory structure: A dynamic memory structure includes a strip semiconductor material disposed on a substrate, a gate standing astride the strip semiconductor material and dividing the strip semiconductor material into a source terminal, a drain terminal and a channel region wherein a source width of the source terminal is larger than or... Agent:

20120326220 - Integrated circuits with sidewall nitridation: Semiconductor devices are provided with encapsulating films for protection of sidewall features during fabrication processes, such as etching to form isolation regions. In a non-volatile flash memory, for example, a trench isolation process is divided into segments to incorporate an encapsulating film along the sidewalls of charge storage material. A... Agent:

20120326221 - Multi-tiered semiconductor devices and associated methods: Methods of fabricating multi-tiered semiconductor devices are described, along with apparatus and systems that include them. In one such method, a first dielectric is formed, and a second dielectric is formed in contact with the first dielectric. A channel is formed through the first dielectric and the second dielectric with... Agent:

20120326222 - Memory structure and fabricating method thereof: A memory structure including a memory cell is provided, and the memory cell includes following elements. A first gate is disposed on a substrate. A stacked structure includes a first dielectric structure, a channel layer, a second dielectric structure and a second gate disposed on the first gate, a first... Agent: Macronix International Co., Ltd.

20120326224 - Semiconductor device: A semiconductor device has a semiconductor substrate, and a semiconductor element having an FET on the semiconductor substrate and comprises a different threshold voltage depending on an OFF state and an ON state. The semiconductor element has an insulating film disposed above a part where a channel of the semiconductor... Agent: Kabushiki Kaisha Toshiba

20120326223 - Semiconductor memory device and method for manufacturing same: According to one embodiment, a method for manufacturing a semiconductor memory device includes forming a stacked body by alternately stacking an insulating film and a conductive film. The method includes forming a trench in the stacked body. The trench extends in one direction and divides the conductive film. The method... Agent: Kabushiki Kaisha Toshiba

20120326225 - Non-volatile memory device: A non-volatile memory device includes a substrate having an active region defined by a device isolation region that has a trench and an air gap, a device isolation pattern positioned at a lower portion of the trench, a memory cell layer including a tunnel insulation layer, a trap insulation layer... Agent:

20120326226 - Superjunction device and method for manufacturing the same: A superjunction device is disclosed, wherein P-type regions in an active region are not in contact with the N+ substrate, and the distance between the surface of the N+ substrate and the bottom of the P-type regions in the active region is greater than the thickness of a transition region... Agent: Shanghai Hua Hong Nec Electronics Co., Ltd.

20120326227 - Method of making an insulated gate semiconductor device and structure: In one embodiment, a vertical insulated-gate field effect transistor includes a shield electrode formed in trench structure within a semiconductor material. A gate electrode is isolated from the semiconductor material using gate insulating layers. Before the shield electrode is formed, spacer layers can be used form shield insulating layers along... Agent:

20120326228 - Self-aligned carbon electronics with embedded gate electrode: A device and method for device fabrication includes forming a buried gate electrode in a dielectric substrate and patterning a stack comprising a high dielectric constant layer, a carbon-based semi-conductive layer and a protection layer over the buried gate electrode. An isolation dielectric layer formed over the stack is opened... Agent: International Business Machines Corporation

20120326229 - Trench transistor and manufacturing method of the trench transistor: A semiconductor device includes a semiconductor body including a first surface and a second surface. The semiconductor device further includes a trench structure extending into the semiconductor body from the first surface. The trench structure includes a first gate electrode part and a first gate dielectric part in a first... Agent: Infineon Technologies Austria Ag

20120326233 - Method to reduce threshold voltage variability with through gate well implant: The present disclosure provides a semiconductor device that may include a substrate including a semiconductor layer overlying an insulating layer. A gate structure that is present on a channel portion of the semiconductor layer. A first dopant region is present in the channel portion of the semiconductor layer, in which... Agent: International Business Machines Corporation

20120326231 - Mosfet and method for manufacturing the same: The present application discloses a MOSFET and a method for manufacturing the same, wherein the MOSFET comprises: an SOI wafer, which comprises a semiconductor substrate, a buried insulator layer, and a semiconductor layer, the buried insulator layer being disposed on the semiconductor substrate, and the semiconductor layer being disposed on... Agent:

20120326232 - Mosfet with recessed channel film and abrupt junctions: MOSFETs and methods for making MOSFETs with a recessed channel and abrupt junctions are disclosed. The method includes creating source and drain extensions while a dummy gate is in place. The source/drain extensions create a diffuse junction with the silicon substrate. The method continues by removing the dummy gate and... Agent: International Business Machines Corporation

20120326230 - Silicon on insulator complementary metal oxide semiconductor with an isolation formed at low temperature: A silicon on insulator (SOI) complementary metal oxide semiconductor (CMOS) with an isolation formed at a low temperature and methods for constructing the same. An example method includes infusing an insulation material at a low temperature to form a silicon-based insulator between the active regions.... Agent: International Business Machines Corporation

20120326234 - Ballast resistor for super-high-voltage devices: An integrated circuit (IC) including a well region of the IC having a first doping level and a plurality of semiconductor regions implanted in the well region. Each of the plurality of semiconductor regions has a second doping level. The second doping level is greater than the first doping level.... Agent:

20120326235 - Semiconductor device: A semiconductor device equally turns on the parasitic bipolar transistors in the finger portions of the finger form source and drain electrodes when a surge voltage is applied, even with the P+ type contact layer surrounding the N+ type source layers and the N+ type drain layers connected to the... Agent: Semiconductor Components Industries, LLC

20120326236 - Multi-gate transistor having sidewall contacts: A multi-gate transistor having a plurality of sidewall contacts and a fabrication method that includes forming a semiconductor fin on a semiconductor substrate and etching a trench within the semiconductor fin, depositing an oxide material within the etched trench, and etching the oxide material to form a dummy oxide layer... Agent: International Business Machines Corporation

20120326237 - Low-profile local interconnect and method of making the same: Embodiments of the present invention provide a structure. The structure includes a plurality of field-effect-transistors having gate stacks formed on top of a semiconductor substrate, the gate stacks having spacers formed at sidewalls thereof; and one or more conductive contacts formed directly on top of the semiconductor substrate and interconnecting... Agent: International Business Machines Corporation

20120326238 - Method for fabricating semiconductor device: A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region thereon; forming a high-k dielectric layer, a barrier layer, and a first metal layer on the substrate; removing the first metal layer of the second region; forming a polysilicon... Agent:

20120326240 - Semiconductor device: A semiconductor device includes a first MISFET and a second MISFET which are formed over a semiconductor substrate and have the same conductive type. The first MISFET has a first gate insulating film arranged over the semiconductor substrate, a first gate electrode arranged over the first gate insulating film, and... Agent: Renesas Electronics Corporation

20120326239 - Sram device: An SRAM device has a first tunnel transistor that allows a current to flow in a direction from the non-inverting output terminal to the first bit line when the first tunnel transistor turns on. The SRAM device has a second tunnel transistor allows a current to flow in a direction... Agent: Kabushiki Kaisha Toshiba

20120326241 - Metal semiconductor alloy structure for low contact resistance: Contact via holes are etched in a dielectric material layer overlying a semiconductor layer to expose the topmost surface of the semiconductor layer. The contact via holes are extended into the semiconductor material layer by continuing to etch the semiconductor layer so that a trench having semiconductor sidewalls is formed... Agent: International Business Machines Corporation

20120326242 - Vertically-oriented semiconductor selection device providing high drive current in cross-point array memory: A vertical semiconductor material mesa upstanding from a semiconductor base that forms a conductive channel between first and second doped regions. The first doped region is electrically coupled to one or more first silicide layers on the surface of the base. The second doped region is electrically coupled to one... Agent:

20120326244 - Semiconductor device and method for manufacturing the same: A semiconductor device includes a semiconductor substrate, a source region, a drain region, an insulating film and a gate electrode. The source region is formed in the semiconductor substrate. The drain region is formed in the semiconductor substrate with being separate from the source region. The insulating film is formed... Agent:

20120326243 - Transistor having aluminum metal gate and method of making the same: A transistor having an aluminum metal gate includes a substrate, a high-k gate dielectric layer, an aluminum metal gate and a source/drain region. The high-k gate dielectric layer is disposed on the substrate. The aluminum metal gate includes a work function tuning layer and an aluminum metal layer disposed orderly... Agent:

20120326245 - Inversion thickness reduction in high-k gate stacks formed by replacement gate processes: A method of forming a transistor device includes forming an interfacial layer on a semiconductor substrate, corresponding to a region between formed doped source and drain regions in the substrate; forming a high dielectric constant (high-k) layer on the interfacial layer, the high-k layer having a dielectric constant greater than... Agent: International Business Machines Corporation

20120326246 - Semiconductor device and manufacturing method of the same: A semiconductor device capable of improving the driving power and a manufacturing method therefor are provided. In a semiconductor device, a gate structure formed by successively stacking a gate oxide film and a silicon layer is arranged over a semiconductor substrate. An oxide film is arranged long the lateral side... Agent: Renesas Electronics Corporation

20120326247 - Self-sealed fluidic channels for a nanopore array: A method of forming a nanopore array includes patterning a front layer of a substrate to form front trenches, the substrate including a buried layer disposed between the front layer and a back layer; depositing a membrane layer over the patterned front layer and in the front trenches; patterning the... Agent: International Business Machines Corporation

20120326248 - Methods for cmos-mems integrated devices with multiple sealed cavities maintained at various pressures: A Microelectromechanical systems (MEMS) structure comprises a MEMS wafer. A MEMS wafer includes a handle wafer with cavities bonded to a device wafer through a dielectric layer disposed between the handle and device wafers. The MEMS wafer also includes a moveable portion of the device wafer suspended over a cavity... Agent: Invensense, Inc.

20120326249 - Mems microphone and method for manufacture: An improved method for manufacturing an MEMS microphone with a double fixed electrode is specified which results in a microphone which likewise has improved properties.... Agent: Epcos Ag

20120326254 - Magnetic random access memory: A magnetic random access memory according to the present invention is provided with: a magnetic recording layer including a magnetization free region having a reversible magnetization, wherein a write current is flown through the magnetic recording layer in an in-plane direction; a magnetization fixed layer having a fixed magnetization; a... Agent: Nec Corporation

20120326253 - Method and system for providing magnetic tunneling junctions usable in spin transfer torque magnetic memories: A method and system provide a magnetic junction. A free layer, a symmetry filter, and a pinned layer are provided. The free layer has a magnetic moment switchable between stable states when a write current is passed through the magnetic junction. The symmetry filter transmits charge carriers having a first... Agent:

20120326251 - Semiconductor memory device: According to one embodiment, a semiconductor memory device includes plural magneto-resistance elements being two-dimensionally arrayed on a semiconductor substrate. In the semiconductor memory device, each of the magneto-resistance elements includes: a first magnetic layer formed on the semiconductor substrate; a non-magnetic layer formed on the first magnetic layer; and a... Agent: Kabushiki Kaisha Toshiba

20120326252 - Semiconductor memory device: According to one embodiment, a semiconductor memory device includes plural magneto-resistance elements. In the semiconductor memory device, each of the magneto-resistance elements includes: a first magnetic layer formed on a semiconductor substrate, the first magnetic layer having an easy axis of magnetization perpendicular to a film surface thereof; a non-magnetic... Agent: Kabushiki Kaisha Toshiba

20120326250 - Spin transfer torque cell for magnetic random access memory: Embodiments are directed to STT MRAM devices. One embodiment of an STT MRAM device includes a reference layer, a tunnel barrier layer, a free layer and one or more conductive vias. The reference layer is configured to have a fixed magnetic moment. In addition, the tunnel barrier layer is configured... Agent: International Business Machines Corporation

20120326255 - Method and device for manufacturing semiconductor devices, semiconductor device and transfer member: Disclosed is a method for manufacturing semiconductor devices. Said method includes: a supply step in which a process liquid (19) that oxidizes and dissolves a target substrate (20) to be treated is supplied to the surface of said substrate (20) to be treated; a positioning step in which a mesh-like... Agent: Canon Marketing Japan Kabushiki Gaisha

20120326257 - Photoelectric conversion layer stack-type solid-state imaging device and imaging apparatus: A photoelectric conversion layer stack-type solid-state imaging device includes a semiconductor substrate, a photoelectric conversion portion, a conductive light shield film, and a dielectric layer. A signal reading portion is formed on a semiconductor substrate. The photoelectric conversion portion is stacked above a light incidence side of the semiconductor substrate... Agent: Fujifilm Corporation

20120326256 - Spectrally tuned plasmonic light collectors: Electronic devices may be provided with imaging modules that include plasmonic light collectors. Plasmonic light collectors may be configured to exploit an interaction between incoming light and plasmons in the plasmonic light collector to alter the path of the incoming light. Plasmonic light collectors may include one or more spectrally... Agent:

20120326258 - Photoelectric conversion device and method for manufacturing the photoelectric conversion device: It is aimed to provide a photoelectric conversion device having high reliability by reducing cracks occurring in a photoelectric conversion layer. Included is a laminate in which a substrate, a pair of electrodes located on the substrate with a gap therebetween, and a photoelectric conversion layer located in the gap... Agent: Kyocera Corporation

20120326259 - Avalanche photodiode with special lateral doping concentration: Avalanche photodiodes having special lateral doping concentration that reduces dark current without causing any loss of optical signals and method for the fabrication thereof are described. In one aspect, an avalanche photodiode comprises: a substrate, a first contact layer coupled to at least one metal contract of a first electrical... Agent: Sifotonics Technologies Co., Ltd.

20120326260 - Photodiode that incorporates a charge balanced set of alternating n and p doped semiconductor regions: A photodiode comprises a first terminal formed in a surface of a semiconductor substrate; a second terminal formed in the substrate surface and spaced apart from the first terminal; and a plurality of adjacent alternating N-type and P-type diffusion regions formed in the substrate surface between the first terminal and... Agent:

20120326262 - Semiconductor integrated circuit device and a method of manufacturing the same: To reduce size of a finished product by reducing the number of externally embedded parts, embedding of a Schottky barrier diode relatively large in the amount of current in a semiconductor integrated circuit device has been pursued. It is general practice to densely arrange a number of contact electrodes in... Agent: Renesas Electronics Corporation

20120326261 - Semiconductor structure and manufacturing method for the same: A semiconductor structure and a manufacturing method for the same are provided. The semiconductor structure includes a well region, a dielectric structure, a first doped layer, a second doped layer and a first doped region. The dielectric structure is on the well region. The dielectric structure has a first dielectric... Agent: Macronix International Co., Ltd.

20120326264 - Method of fabricating semiconductor device, and semiconductor device: A method of fabricating a semiconductor device of the present invention includes the steps of forming a single crystal semiconductor device, attaching the single crystal semiconductor device on a substrate, forming a TFT on a glass substrate, and electrically connecting the single crystal semiconductor device and the TFT. In the... Agent: Sharp Kabushiki Kaisha

20120326263 - Semiconductor diode: A semiconductor diode includes a semiconductor substrate having a lightly doped region with a first conductivity type therein. A first heavily doped region with a second conductivity type opposite to the first conductivity type is in the lightly doped region. A second heavily doped region with the first conductivity type... Agent: Mediatek Inc.

20120326267 - Composite isolation layer structures for semiconductor devices and methods of manufacturing the same: An isolation structure includes an oxide region in a lower portion of a trench on a substrate, an oxide layer conforming to a sidewall of the trench in an upper portion of the trench above the oxide region and a nitride region in the upper portion of the trench on... Agent: Samsung Electronics Co., Ltd.

20120326266 - High-voltage semiconductor device: A high-voltage semiconductor device is disclosed. The HV semiconductor device includes: a substrate; a well of first conductive type disposed in the substrate; a first doping region of second conductive type disposed in the p-well; a first isolation structure disposed in the well of first conductive type and surrounding the... Agent:

20120326265 - Method of forming memory cell access device: A memory device includes an access device including a first doped semiconductor region having a first conductivity type, and a second doped semiconductor region having a second conductivity type opposite the first conductivity type. Both the first and the second doped semiconductor regions are formed in a single-crystalline semiconductor body,... Agent: Macronix International Co., Ltd.

20120326268 - Silicon epitaxial wafer, method for manufacturing the same, bonded soi wafer and method for manufacturing the same: A silicon epitaxial wafer having a silicon epitaxial layer grown by vapor phase epitaxy on a main surface of a silicon single crystal substrate, wherein the main surface of the silicon single crystal substrate is tilted with respect to a [100] axis at an angle θ in a [011] direction... Agent: Shin-etsu Handotai Co., Ltd.

20120326269 - E-fuse structures and methods of manufacture: E-fuse structures in back end of the line (BEOL) interconnects and methods of manufacture are provided. The method includes forming an interconnect via in a substrate in alignment with a first underlying metal wire and forming an e-fuse via in the substrate, exposing a second underlying metal wire. The method... Agent: International Business Machines Corporation

20120326270 - Interdigitated vertical native capacitor: A metal capacitor structure includes a plurality of line level structures vertically interconnected with via level structures. Each first line level structure and each second line level structure includes a set of parallel metal lines that is physically joined at an end to a rectangular tab structure having a rectangular... Agent: International Business Machines Corporation

20120326273 - Method of manufacturing semiconductor device and semiconductor device: A method of manufacturing a semiconductor device including a plurality of capacitors each of which has bottom electrode, dielectric layer, and top electrode includes stacking a bottom electrode layer, a dielectric layer and an top electrode layer, patterning the top electrode layer to form a plurality of top electrodes arranged... Agent: Fujitsu Semiconductor Limited

20120326271 - Secondary device integration into coreless microelectronic device packages: The present disclosure relates to the field of fabricating microelectronic device packages and, more particularly, to microelectronic device packages having bumpless build-up layer (BBUL) designs, wherein at least one secondary device is disposed within the thickness (i.e. the z-direction or z-height) of the microelectronic device of the microelectronic device package.... Agent:

20120326272 - Thin-film capacitor, multilayer wiring board and semiconductor device: A thin-film capacitor with first capacitative elements each having an electrode layer with a first polarity on an upper surface of a dielectric layer and an electrode layer with a second polarity on a lower surface of the dielectric layer; second capacitative elements each having an electrode layer with the... Agent: Sony Corporation

20120326275 - Capacitors: Some embodiments include capacitors. The capacitors may include container-shaped storage node structures that have, along a cross-section, a pair of upwardly-extending sidewalls. Individual sidewalls may have a narrower segment over a wider segment. Capacitor dielectric material and capacitor electrode material may be along the narrower and wider segments of the... Agent: Micron Technology, Inc.

20120326274 - Semiconductor structure having an integrated quadruple-wall capacitor for embedded dynamic random access memory (edram) and method to form the same: Semiconductor structures having integrated quadruple-wall capacitors for eDRAM and methods to form the same are described. For example, an embedded quadruple-wall capacitor includes a trench disposed in a first dielectric layer disposed above a substrate. The trench has a bottom and sidewalls. A quadruple arrangement of metal plates is disposed... Agent:

20120326276 - Buried layer of an integrated circuit: Various aspects of the technology are directed to integrated circuit manufacturing methods and integrated circuits. In one method, a first charge type buried layer in a semiconductor material of an integrated circuit by implanting first charge type dopants of the first charge type buried layer through a sacrificial oxide over... Agent: Macronix International Co., Ltd.

20120326277 - Power semiconductor device and manufacturing method thereof: A power semiconductor device and a manufacturing method thereof are provided. The method of manufacturing a power semiconductor device includes the steps: (a) forming a cell structure on a first conductivity type semiconductor substrate; (b) implanting second conductivity type ions onto the rear surface of the first conductivity type semiconductor... Agent:

20120326279 - Method for forming semiconductor devices with active silicon height variation: A semiconductor product has different active thicknesses of silicon on a single semiconductor substrate. The thickness of the silicon layer is changed either by selectively adding silicon or subtracting silicon from an original layer of silicon. The different active thicknesses are suitable for use in different types of devices, such... Agent: Advanced Micro Devices, Inc.

20120326278 - Method to solve potential yield loss due to metal migration to wire routing nets from fiduciary marks on product during chemical-mechanical-polishing (cmp) planarization processing steps: A mask for a semiconductor process step includes an indicia section. The indicia section on the mask is used to produce a field of separated polygon elements with a defined negative space in the field providing an indicia.... Agent: Exar Corporation

20120326280 - Laminated film and use thereof: Provided is a laminated film wherein the space between semiconductor elements that are three-dimensionally mounted can be filled easily and securely. The laminated film of the present invention is a laminated film for filling the space between semiconductor elements that are electrically connected through a member or connection, the film... Agent: Nitto Denko Corporation

20120326281 - Integrated circuit packaging system with interconnects and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing a substrate; attaching an integrated circuit to the substrate; attaching a vertical interconnect over the substrate; forming an encapsulation on the substrate and covering the vertical interconnect; and forming a rounded cavity, having a curved side, in the... Agent:

20120326283 - Interconnect regions: Some embodiments include interconnect regions. The regions may contain, along a cross section, a closed-shape interior region having an electrically conductive material therein, a first dielectric material configured as a liner extending entirely around a lateral periphery of the interior region, and at least two dielectric projections joining to the... Agent: Micron Technology, Inc.

20120326282 - Methods and arrangements relating to semiconductor packages including multi-memory dies: Embodiments provide a method comprising providing a multi-memory die that comprises multiple individual memory dies. Each of the individual memory dies is defined as an individual memory die within a wafer of semiconductor material during production of memory dies. The multi-memory die is created by singulating the wafer of semiconductor... Agent:

20120326284 - Integrated circuit packaging system with thermal emission and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: forming a lead array having an innermost space with an innermost lead having an inner lead profile different around an inner non-horizontal side of the innermost lead; forming a middle lead having a middle lead profile the same around... Agent:

20120326287 - Dc/dc convertor power module package incorporating a stacked controller and construction methodology: Methods and systems are described for enabling the efficient fabrication of small form factor power converters and also the small form factor power converter devices.... Agent: National Semiconductor Corporation

20120326285 - Integrated circuit packaging system with a lead and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: forming a package paddle; forming a lead adjacent to the package paddle; depositing a lead conductive cap on the lead, the lead conductive cap includes a nickel layer having a thickness between 2.55 μm to 8.00 μm deposited on... Agent:

20120326286 - Integrated circuit packaging system with wafer level reconfigured multichip packaging system and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: removing a portion of a leadframe to form a partially removed region and an upper portion of a peripheral lead on the leadframe first side; mounting a first integrated circuit over the partially removed region with a first adhesive;... Agent:

20120326288 - Method of assembling semiconductor device: A method of assembling a semiconductor device includes providing a conductive lead frame panel and selectively half-etching a top side of the lead frame panel to provide a pin pads. A flip chip die is attached and electrically connected to the pin pads and then the lead frame panel and... Agent: Freescale Semiconductor, Inc

20120326289 - Semiconductor device and method of manufacturing the same: A semiconductor device includes: leads (5) in each of which a cutout (5a) is formed; a die pad (11); a power element (1) held on the die pad (11); and a package (6) made of a resin material, and configured to encapsulate inner end portions of the leads (5), and... Agent:

20120326290 - Silicon carrier optoelectronic packaging: An optoelectronic (OE) package or system and method for fabrication is disclosed which includes a silicon layer with wiring. The silicon layer has an optical via for allowing light to pass therethrough. An optical coupling layer is bonded to the silicon layer, and the optical coupling layer includes a plurality... Agent: International Business Machines Corporation

20120326291 - Integrated circuit packaging system with underfill and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing a substrate; attaching a flip chip to the substrate; attaching a heat slug to the substrate and the flip chip; and forming a moldable underfill having a top underfill surface on the substrate, the flip chip, and the... Agent:

20120326292 - Electronic control unit: An electronic control unit includes a substrate, a semiconductor module, a heat storage body, an insulator, and a heat sink. The substrate includes a wiring and a land. The semiconductor module includes a semiconductor chip working as a switching element, a terminal electrically coupled with the semiconductor chip and the... Agent: Denso Corporation

20120326293 - Semiconductor package having electrode on side surface, and semiconductor device: A semiconductor package includes a substrate, a semiconductor chip disposed on the substrate, and a connection wiring connected electrically to the semiconductor chip. The semiconductor package further includes a sidewall formed of an insulator, an inner electrode formed on a first surface of the sidewall that faces the substrate, and... Agent: Panasonic Corporation

20120326294 - Multichip electronic packages and methods of manufacture: A multi-chip electronic package and methods of manufacture are provided. The method comprises adjusting a piston position of one or more pistons with respect to one or more chips on a chip carrier. The adjusting comprises placing a chip shim on the chips and placing a seal shim between a... Agent: International Business Machines Corporation

20120326295 - Semiconductor module: A semiconductor module includes a semiconductor chip having a switching function, a resin portion that covers the chip, terminals, and a heat dissipation portion. The resin portion includes first and second surfaces, which are opposed to each other and expand generally parallel to an imaginary plane; and a substrate is... Agent: Denso Corporation

20120326298 - Bump structure with barrier layer on post-passivation interconnect: A semiconductor device includes a barrier layer between a solder bump and a post-passivation interconnect (PPI) layer. The barrier layer is formed of at least one of an electroless nickel (Ni) layer, an electroless palladium (Pd) layer or an immersion gold (Au) layer.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120326300 - Low profile package and method: In a method aspect, a multiplicity of ICs are attached to routing on a structurally supportive carrier (such as a wafer). The dice are encapsulated and then both the dice and the encapsulant layer are thinned with the carrier in place. A second routing layer is formed over the first... Agent: National Semiconductor Corporation

20120326299 - Semiconductor chip with dual polymer film interconnect structures: Various semiconductor chip input/output structures and methods of making the same are disclosed. In one aspect, a method of manufacturing is provided that includes applying a first polymer film to a side of a semiconductor chip and forming a first underbump metallization structure with at least a portion on the... Agent:

20120326296 - Semiconductor device and method of forming interconnect structure over seed layer on contact pad of semiconductor die without undercutting seed layer beneath interconnect structure: A semiconductor device has a semiconductor die with a first conductive layer formed over the die. A first insulating layer is formed over the die with a first opening in the first insulating layer disposed over the first conductive layer. A second conductive layer is formed over the first insulating... Agent: Stats Chippac, Ltd.

20120326303 - Semiconductor device and method of forming partially-etched conductive layer recessed within substrate for bonding to semiconductor die: A semiconductor device has a substrate with a die attach area. A conductive layer is formed over a surface of the substrate and extending below the surface. An insulating layer is formed over the surface of the substrate outside the die attach area. A portion of the conductive layer is... Agent: Stats Chippac, Ltd.

20120326302 - Semiconductor device and method of forming pip with inner known good die interconnected with conductive bumps: A PiP semiconductor device has an inner known good semiconductor package. In the semiconductor package, a first via is formed in a temporary carrier. A first conductive layer is formed over the carrier and into the first via. The first conductive layer in the first via forms a conductive bump.... Agent: Stats Chippac, Ltd.

20120326297 - Semiconductor device and method of forming protective coating over interconnect structure to inhibit surface oxidation: A semiconductor device has a semiconductor die with a first conductive layer formed over the semiconductor die. A first insulating layer is formed over the semiconductor die with a first opening in the first insulating layer disposed over the first conductive layer. A second conductive layer is formed over the... Agent: Stats Chippac, Ltd.

20120326301 - Thermosetting resin composition, flip-chip mounting adhesive, semiconductor device fabrication method, and semiconductor device: The present invention is aimed to provide a thermosetting resin composition which is easily produced, has excellent storage stability and thermal stability while maintaining high transparency and preventing formation of voids on the occasion of semiconductor chip bonding, and gives a cured product having excellent heat resistance, a flip-chip mounting... Agent: Sekisui Chemical Co., Ltd.

20120326308 - Enhanced wlp for superior temp cycling, drop test and high current applications: A WLP device is provided with a flange shaped UBM or an embedded partial solder ball UBM on top of a copper post style circuit connection.... Agent: Maxim Integrated Products, Inc.

20120326304 - Externally wire bondable chip scale package in a system-in-package module: There is provided a system and method for an externally wire bondable chip scale package in a system-in-package module. There is provided a system-in-package module comprising a substrate including a first contact pad disposed thereon, a packaged device attached to the substrate, wherein an electrode of the packaged device is... Agent:

20120326306 - Pop package and manufacturing method thereof: The present invention relates to a package on package (POP) package and a manufacturing method thereof, and provides a POP package and a manufacturing method thereof in which the POP package can be implemented by using a transfer mold method without employing a top gate mold method. To this end,... Agent:

20120326305 - Semiconductor package and fabrication method thereof: A semiconductor package includes: a dielectric layer having opposing first and second surfaces and side surfaces; a copper wiring layer disposed on the first surface of the dielectric layer and having extension pads; a surface processing layer disposed on the wiring layer; a semiconductor chip disposed on the wiring layer... Agent: Siliconware Precision Industries Co., Ltd.

20120326307 - Stacked semiconductor device: A stacked semiconductor device including a plurality of semiconductor chips stacked vertically, a plurality of scribe lane elements each forming a step with a semiconductor chip of the plurality of semiconductor chips and respectively formed on a side surface of each of the plurality of semiconductor chips, a redistribution element... Agent:

20120326309 - Optimized annular copper tsv: The present disclosure provides a thermo-mechanically reliable copper TSV and a technique to form such TSV during BEOL processing. The TSV constitutes an annular trench which extends through the semiconductor substrate. The substrate defines the inner and outer sidewalls of the trench, which sidewalls are separated by a distance within... Agent: International Business Machines Corporation

20120326310 - Nanoscale interconnects fabricated by electrical field directed assembly of nanoelements: The invention provides a fast, scalable, room temperature process for fabricating metallic nanorods from nanoparticles or fabricating metallic or semiconducting nanorods from carbon nanotubes suspended in an aqueous solution. The assembled nanorods are suitable for use as nanoscale interconnects in CMOS-based devices and sensors. Metallic nanoparticles or carbon nanotubes are... Agent:

20120326311 - Enhanced diffusion barrier for interconnect structures: Alternative methods of fabricating an interconnect structure in which an enhanced diffusion barrier including an in-situ formed metal nitride liner formed between an interconnect dielectric material and an overlying metal diffusion barrier liner are provided. In one embodiment, the method includes forming at least one opening into an interconnect dielectric... Agent: International Business Machines Corporation

20120326312 - In-situ formation of silicon and tantalum containing barrier: A method includes forming an opening in a dielectric layer, and forming a silicon rich layer on a surface of the dielectric layer. A portion of the silicon rich layer extends into the opening and contacts the dielectric layer. A tantalum-containing layer is formed over and the contacting the silicon... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120326313 - Single exposure in multi-damascene process: Methods of fabricating a multi-layer semiconductor device such as a multi-layer damascene or inverted multi-layer damascene structure using only a single or reduced number of exposure steps. The method may include etching a precursor structure formed of materials with differential removal rates for a given removal condition. The method may... Agent: Tessera, Inc.

20120326314 - Large-grain, low-resistivity tungsten on a conductive compound: A layered structure and semiconductor device and methods for fabricating a layered structure and semiconductor device. The layered structure includes: a base layer including a material containing titanium nitride, tantalum nitride, or a combination thereof; a conductive layer including a material containing: tantalum aluminum nitride, titanium aluminum nitride, tantalum silicon... Agent: International Business Machines Corporation

20120326315 - Method of manufacturing a semiconductor device and semiconductor device: A method of manufacturing a semiconductor device has forming, in a dielectric film, a first opening and a second opening located in the first opening, forming a first metal film containing a first metal over a whole surface, etching the first metal film at a bottom of the second opening... Agent: Fujitsu Semiconductor Limited

20120326318 - Buried metal-semiconductor alloy layers and structures and methods for fabrication thereof: A method for forming a metal-semiconductor alloy layer uses particular thermal annealing conditions to provide a stress free metal-semiconductor alloy layer through interdiffusion of a buried semiconductor material layer and a metal-semiconductor alloy forming metal layer that contacts the buried semiconductor material layer within an aperture through a capping layer... Agent: International Business Machines Corporation

20120326316 - Metal contacts for molecular device junctions and surface-diffusion-mediated deposition: Metal contact formation for molecular device junctions by surface-diffusion-mediated deposition (SDMD) is described. In an example, a method of fabricating a molecular device junction by surface-diffusion-mediated deposition (SDMD) includes forming a molecular layer above a first region of a substrate. A region of metal atoms is formed above a second... Agent:

20120326317 - Semiconductor device and manufacturing method therefor: The present invention discloses a semiconductor device and a manufacturing method therefor. Conventionally, platinum is deposited in a device substrate to suppress diffusion of nickel in nickel silicide. However, introducing platinum by means of deposition makes the platinum only stay on the surface but fails to effectively suppress the diffusion... Agent: Semiconductor Manufacturing International (beijing) Corporation

20120326319 - Method and structure for through-silicon via (tsv) with diffused isolation well: A semiconductor device and method for forming the same provide a through silicon via (TSV) surrounded by a dielectric liner. The TSV and dielectric liner are surrounded by a well region formed by thermal diffusion. The well region includes a dopant impurity type opposite the dopant impurity type of the... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20120326320 - Semiconductor device and manufacturing method thereof: The present invention relates to a semiconductor device and the manufacturing method thereof. First, a hole is formed on a first side of a substrate. Then, an isolation layer is formed on an inner side of the hole and the hole is filled with a semiconductor material. Next, functional structures... Agent: Semiconductor Manufacturing International (beijing) Corporation

20120326321 - Techniques for modular chip fabrication: Techniques for modular chip fabrication are provided. In one aspect, a modular chip structure is provided. The modular chip structure comprises a substrate; a carrier platform attached to the substrate, the carrier platform comprising a plurality of conductive vias extending through the carrier platform; and a wiring layer on the... Agent: International Business Machines Corporation

20120326322 - Chip package with reinforced positive alignment features: A chip package includes a substrate having a positive feature, which is defined on a surface of the substrate and which protrudes above a region on the surface proximate to the positive feature. Furthermore, the chip package includes a mechanical reinforcement mechanism defined on the substrate proximate to the positive... Agent: Oracle International Corporation

20120326323 - High voltage high package pressure semiconductor package: A hermetically sealed integrated circuit package that includes a cavity housing a semiconductor die, whereby the cavity is pressurized during assembly and when formed. The invention prevents the stress on a package created when the package is subject to high temperatures at atmospheric pressure and then cooled from reducing the... Agent: Microsemi Corporation

20120326324 - Integrated circuit packaging system with package stacking and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing a base substrate; mounting an organic chip assembly on the base substrate, the organic chip assembly includes providing an assembly integrated circuit embedded in an organic cover, the organic cover having a through via, and the organic chip... Agent:

20120326325 - Integrated circuit packaging system with vertical interconnects and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing a substrate; mounting an integrated circuit over the substrate; forming an encapsulation over the integrated circuit, the encapsulation having an encapsulation interior sidewall; forming a peripheral non-horizontal conductive plate directly on the encapsulation interior sidewall; and forming a... Agent:

20120326330 - Method and apparatus providing integrated circuit having redistribution layer with recessed connectors: A method of making a semiconductor die includes forming a trench around a conductive stud extending from the first side to a second side of a substrate to expose a portion of the stud and then forming a conductive layer inside the trench and in electrical contact with the stud.... Agent:

20120326328 - Semiconductor device and manufacturing method therefor: A method for manufacturing a semiconductor device includes providing a substrate having a first surface and a second surface, the second surface is on the opposite side of the substrate facing away from the first surface. The method further includes forming a first portion of an opening by etching a... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20120326329 - Semiconductor device and method of forming a conductive via-in-via structure: A semiconductor device is made from a semiconductor wafer containing semiconductor die separated by a peripheral region. A conductive via-in-via structure is formed in the peripheral region or through an active region of the device to provide additional tensile strength. The conductive via-in-via structure includes an inner conductive via and... Agent: Stats Chippac, Ltd.

20120326326 - Systems and methods for producing flat surfaces in interconnect structures: Methods and apparatus for forming a semiconductor device are provided which may include any number of features. One feature is a method of forming an interconnect structure that results in the interconnect structure having a co-planar or flat top surface. Another feature is a method of forming an interconnect structure... Agent: Tessera, Inc.

20120326327 - Via structure for integrated circuits: An integrated circuit (IC) having a concentric arrangement of stacked vias is disclosed. The IC includes first and second pluralities of signal lines on first and second metal layers, respectively. The second metal layer is arranged between the first metal layer and a silicon layer. The IC also includes a... Agent:

20120326331 - Integrated circuit packaging system with vertical interconnects and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing a first substrate; attaching vertical interconnects along a periphery of the first substrate; mounting an integrated circuit over the first substrate, the integrated circuit surrounded by the vertical interconnects; and mounting a second substrate directly on the vertical... Agent:

20120326333 - Semiconductor chip stacking for redundancy and yield improvement: A stacked semiconductor chip comprising multiple unit chips contains multiple instances of a first chip component that have a low yield and are distributed among the multiple unit chips. An instance of the first chip component within a first unit chip is logically paired with at least another instance of... Agent: International Business Machines Corporation

20120326332 - Semiconductor device with encapsulated electrical connection elements and fabrication process thereof: An integrated-circuit chip and external electrical connection elements are arranged on a first side of a substrate to form an assembly that is placed within a mold. The mold includes first and second opposed planar faces with a molding film made of a deformable material on the first planar face.... Agent: Stmicroelectronics (grenoble 2) Sas

20120326334 - Interposer, its manufacturing method, and semiconductor device: At least one embodiment provides an interposer including: a lower wiring substrate; an upper wiring substrate disposed over the lower wiring substrate via a gap; and through-electrodes which penetrate through the upper wiring substrate and the lower wiring substrate across the gap to thereby link the upper wiring substrate and... Agent: Shinko Electric Industries Co., Ltd.

20120326335 - Low-noise flip-chip packages and flip chips thereof: A low-noise flip-chip package, comprising: a carrier substrate having first and second opposing main faces; and a flip-chip substrate connected in a face-down manner onto the first main face of the carrier substrate via a connection array, wherein: the flip-chip substrate comprises at least first and second circuitry portions spaced... Agent: Fujitsu Semiconductor Limited

20120326336 - Bond pad design for improved routing and reduced package stress: A bond pad design comprises a plurality of bond pads on a semiconductor chip and a plurality of under-bump metallurgy (UBM) layers formed on respective bond pads of the plurality. At least one of the bond pads has an elongated shape having an elongated portion and a contracted portion, the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120326337 - Semiconductor device and method of forming ewlb package with standoff conductive layer over encapsulant bumps: A semiconductor device has a carrier with a die attach area. Recesses are formed partially through the carrier outside the die attach area. A first conductive layer is conformally applied over a surface of the carrier and into the recesses. A semiconductor die is mounted to the die attach area... Agent: Stats Chippac, Ltd.

20120326338 - Semiconductor device: According to one embodiment, a semiconductor device is provided which includes a substrate in which conductor layers and insulated layers are stacked alternately, a semiconductor element mounted on a first surface side of the substrate, and a reinforcing plate attached to a second surface side that is an opposite side... Agent: Kabushiki Kaisha Toshiba

20120326339 - Semiconductor device, and method and apparatus for manufacturing the same: c

20120319069 - Phase change memory device: Provided are a phase change memory device and a method for forming the phase change memory device. The method includes forming a phase change material layer by providing reactive radicals to a substrate. The reactive radicals may comprise precursors for a phase change material and nitrogen.... Agent: Samsung Electronics Co., Ltd.

20120319072 - Method for manufacturing non-volatile memory device, non-volatile memory element, and non-volatile memory device: A manufacturing method for manufacturing, with a simple process, a non-volatile memory apparatus having a stable memory performance includes: (a) forming a stacking-structure body above a substrate by alternately stacking conductive layers comprising a transition metal and interlayer insulating films comprising an insulating material; (b) forming a contact hole penetrating... Agent:

20120319071 - Non-volatile semiconductor memory device and manufacturing method thereof: The present invention provides a variable resistive element that can perform a stable switching operation at low voltage and low current, and also provides a low-power consumption large-capacity non-volatile semiconductor memory device including the variable resistive element. The non-volatile semiconductor memory device is a device using a variable resistive element,... Agent:

20120319074 - Resistance change device and memory cell array: According to one embodiment, a resistance change device includes a first electrode including a metal, a second electrode, and an amorphous oxide layer including Si and O between the first and second electrode, the layer having a concentration gradient of O and a first peak thereof in a direction from... Agent:

20120319070 - Resistive-switching nonvolatile memory elements: Nonvolatile memory elements are provided comprising switching metal oxides. The nonvolatile memory elements may be formed in one or more layers on an integrated circuit. Each memory element may have a first conductive layer, a metal oxide layer, and a second conductive layer. Electrical devices may be coupled in series... Agent: Intermolecular, Inc.

20120319075 - Semiconductor device including storage device and method for driving the same: A structure of a storage device which can operate memory elements utilizing silicide reaction using the same voltage value for writing and for reading, and a method for driving the same are proposed. The present invention relates to a storage device including a memory element and a circuit which changes... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120319073 - Variable resistance memory device having reduced bottom contact area and method of forming the same: A variable resistance memory element and method of forming the same. The memory element includes a substrate supporting a bottom electrode having a small bottom contact area. A variable resistance material is formed over the bottom electrodes such that the variable resistance material has a surface that is in electrical... Agent:

20120319076 - Multi-bit memory elements, memory devices including the same, and methods of manufacturing the same: In one embodiment, the memory element may include a first electrode, a second electrode spaced apart from the first electrode, a memory layer between the first electrode and the second electrode, and an auxiliary layer between the memory layer and the second electrode. The auxiliary layer provides a multi-bit memory... Agent: Samsung Electronics Co., Ltd.

20120319077 - Nonvolatile semiconductor memory device: According to one embodiment, a nonvolatile semiconductor memory device includes a plurality of first interconnections arranged parallel, a plurality of second interconnections arranged parallel to intersect the first interconnections, and memory cell portions respectively arranged at intersecting portions between the first and second interconnections and each configured by laminating a... Agent:

20120319078 - Graphene growth on a non-hexagonal lattice: A graphene layer is formed on a crystallographic surface having a non-hexagonal symmetry. The crystallographic surface can be a surface of a single crystalline semiconductor carbide layer. The non-hexagonal symmetry surface of the single crystalline semiconductor carbide layer is annealed at an elevated temperature in ultra-high vacuum environment to form... Agent: International Business Machines Corporation

20120319079 - Light emitting device: Disclosed is a light emitting device including a first conductive type semiconductor layer; a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer; and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the active layer comprising... Agent:

20120319081 - Multi-luminous element and method for manufacturing same: The present invention relates to a multi-luminous element and a method for manufacturing the same. The present invention provides the multi-luminous element comprising: a buffer layer disposed on a substrate; a first type semiconductor layer disposed on the buffer layer; a first active layer which is disposed on the first... Agent: Korea Photonics Technology Institute

20120319080 - Nitride semiconductor light-emitting element and method for producing same: Disclosed is a nitride semiconductor light-emitting element comprising a p-type nitride semiconductor layer 1, a p-type nitride semiconductor layer 2, and a p-type nitride semiconductor layer 3 placed in order above a nitride semiconductor active layer, wherein the p-type nitride semiconductor layer 1 and p-type nitride semiconductor layer 2 each... Agent:

20120319082 - Low thermal conductivity matrices with embedded nanostructures and methods thereof: A matrix with at least one embedded array of nanowires and method thereof. The matrix includes nanowires and one or more fill materials located between the nanowires. Each of the nanowires including a first end and a second end. The nanowires are substantially parallel to each other and are fixed... Agent: Alphabet Energy, Inc.

20120319083 - Nanorod semiconductor device having a contact structure, and method for manufacturing same: Disclosed is a nanorod semiconductor device having a contact structure, and a method for manufacturing the same. The nanorod semiconductor device having a contact structure according to one embodiment of the present disclosure includes: a transparent wafer; a transparent electrode layer formed on the transparent wafer; a nanorod layer including... Agent: Dongguk University Industry-academic Cooperation F

20120319084 - Planar and nanowire field effect transistors: An integrated circuit includes a plurality of gate-all-around (GAA) nanowire field effect transistors (FETs), a plurality of omega-gate nanowire FETs, and a plurality of planar channel FETs, wherein the plurality of GAA FETs, the plurality of omega-gate nanowire FETs, and the plurality of planar channel FETs are disposed on a... Agent: International Business Machines Corporation

20120319085 - Array of quantum systems in a cavity for quantum computing: A device includes a volume bounded by electromagnetically conducting walls, an aperture in a bounding wall of the electromagnetically conducting walls, a plurality of quantum systems disposed within the volume and an electromagnetic field source coupled to the volume via the aperture.... Agent: International Business Machines Corporation

20120319091 - Aromatic amine derivative, and organic electroluminescent element comprising same: Provided are: an aromatic amine derivative having a terminal substituent selected from a dibenzofuran, a dibenzothiophene, a substituted carbazole, and a substituted fluorene bound to the central skeleton having a specific structure through a nitrogen atom; an organic electroluminescence device, including an organic thin-film layer formed of one or more... Agent: Idemitsu Kosan Co., Ltd.

20120319088 - Carborane compound, organic light-emitting diode including the same and flat display device including organic light-emitting diode: wherein CB denotes carborane, Ar is a substituted or unsubstituted phenylene group, and a detailed description of R1, R2, a, b, and n is provided in the detailed description. An organic light-emitting diode including an organic layer including the compound has high luminous efficiency.... Agent: Samsung Mobile Display Co., Ltd.

20120319086 - Condensed-cyclic compound and organic light emitting diode comprising the same: A condensed-cyclic compound and an organic light-emitting diode including the same.... Agent: Samsung Mobile Display Co., Ltd.

20120319090 - Device, thin film transistor, method for manufacturing the device and method for manufacturing the thin film transistor: A problem of the present invention is to provide a device having good characteristics and long life, wherein a functional thin film is formed in a desired region by a coating method; a thin film transistor; a method for producing the device; and a method for producing the thin film... Agent: Panasonic Corporation

20120319097 - Electrode treatment process for organic electronic devices: The present invention relates to a process for the treatment of electrodes in organic electronic (OE) devices, in particular organic field effect transistors (OFETs), to devices prepared by such a process, and to materials and formulations used in such a process.... Agent: Merck Patent Gesellschaft Mit Beschrankter Haftung

20120319087 - Heterocyclic compound and organic light-emitting device containing same: A heterocyclic compound, organic light-emitting device, and a flat panel display device, the heterocyclic compound being represented by Formula 1 or 2 below:... Agent:

20120319099 - Material for organic electroluminescence devices and organic electroluminescence device using the material: A material for organic electroluminescence devices comprising a compound in which a heterocyclic group having nitrogen is bonded to an arylcarbazolyl group or a carbazolylalkylene group and an organic electroluminescence device comprising an anode, a cathode and an organic thin film layer comprising at least one layer and disposed between... Agent: Idemitsu Kosan Co., Ltd.

20120319094 - Method of manufacturing organic electronic device, and organic electronic device: Provided is a method of manufacturing an organic electronic device, wherein an organic electronic device that controls the injection and mobility of carriers in an organic charge transport layer thereof is manufactured by laminating organic layers comprising the same charge transportable organic compound, when manufacturing the organic electronic device with... Agent: Konica Minolta Holdings, Inc.

20120319093 - Organic electroluminescence generating devices: An electroluminescence generating device comprising a channel of organic semiconductor material, said channel being able to carry both types of charge carriers, said charge carriers being electrons and holes; an electron electrode, said electron electrode being in contact with said channel and positioned on top of a first side of... Agent:

20120319095 - Organic electroluminescent device: Disclosed is an organic electroluminescent device (organic EL device) that is improved in luminous efficiency, sufficiently secures driving stability, and has a simple configuration. This organic EL device comprises organic layers between an anode and a cathode piled one upon another on a substrate and at least one organic layer... Agent: Nippon Steel Chemical Co., Ltd.

20120319089 - Organic light emitting structures, methods of forming organic light emitting structures, organic light emitting display devices and methods of manufacturing organic light emitting display devices: An organic light emitting display device includes a hole transport layer (HTL) having a first region and a second region, an emitting layer (EML) disposed on the hole transport layer in the first region, a hydrophobic pattern disposed on the hole transport layer in the second region and an electron... Agent: Samsung Mobile Display Co., Ltd.

20120319092 - Sealed body, method for manufacturing sealed body, light-emitting device, and method for manufacturing light-emitting device: A highly productive method for sealing substrates with the use of glass frit is provided. A method for sealing substrates with the use of glass frit, which can be used for a substrate provided with a material having low heat resistance, is provided. A highly airtight sealed body which is... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120319096 - Semiconductor devices including an electrically percolating source layer and methods of fabricating the same: Various embodiments are provided for semiconductor devices including an electrically percolating source layer and methods of fabricating the same. In one embodiment, a semiconductor device includes a gate layer, a dielectric layer, a memory layer, a source layer, a semiconducting channel layer, and a drain layer. The source layer is... Agent:

20120319098 - Substituted pyridyl compound and organic electroluminescent element: The present invention relates to a substituted pyridyl compound represented by the following general formula (1), (2), or (3) and an organic electroluminescent element containing a pair of electrodes and at least one organic layer interposed therebetween, in which the at least one organic layer contains the substituted pyridyl compound... Agent: Hodogaya Chemical Co., Ltd

20120319107 - Liquid crystal display device: An object of the present invention is to provide a liquid crystal display device which allows a desirable storage capacitor to be ensured in a pixel without decreasing the aperture ratio in response to changes in frame frequency. In a liquid crystal display device including a pixel transistor and two... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120319101 - Manufacturing method of semiconductor device: A first insulating film in contact with an oxide semiconductor film and a second insulating film are stacked in this order over an electrode film of a transistor including the oxide semiconductor film, an etching mask is formed over the second insulating film, an opening portion exposing the electrode film... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120319104 - Method for producing circuit board, circuit board and display device: Provided is a method of producing a circuit board of which the aperture ratio is increased. The method of producing a circuit board of the present invention is a method of producing a circuit board that includes a thin film transistor, the thin film transistor including an oxide semiconductor layer,... Agent: Sharp Kabushiki Kaisha

20120319106 - Semiconductor device and manufacturing method the same: An object is to manufacture and provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which a semiconductor layer including a channel formation region serves as an oxide semiconductor film,... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120319100 - Semiconductor device and method for manufacturing the same: A miniaturized semiconductor device in which an increase in power consumption is suppressed and a method for manufacturing the semiconductor device are provided. A highly reliable semiconductor device having stable electric characteristics and a method for manufacturing the semiconductor device are provided. An oxide semiconductor film is irradiated with ions... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120319102 - Semiconductor device and method for manufacturing the same: An object is to provide a structure of a transistor which has a channel formation region formed using an oxide semiconductor and a positive threshold voltage value, which enables a so-called normally-on switching element. The transistor includes an oxide semiconductor stack in which at least a first oxide semiconductor layer... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120319103 - Thin film transistor and method for preparing the same: The present invention relates to a thin film transistor and a method of manufacturing the same. More particularly, the present invention relates to a thin film transistor that includes a zinc oxide material including Si as a channel material of a semiconductor layer, and a method of manufacturing the same.... Agent:

20120319108 - Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device: To suppress deterioration in electrical characteristics in a transistor including an oxide semiconductor layer or a semiconductor device including the transistor. In a transistor in which a channel layer is formed using an oxide semiconductor, a silicon layer is provided in contact with a surface of the oxide semiconductor layer.... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120319105 - Zinc-tin oxide thin-film transistors: Methods of forming transparent zinc-tin oxide structures are described. Devices that include transparent zinc-tin oxide structures as at least one of a channel layer in a transistor or a transparent film disposed over an electrical device that is at a substrate.... Agent:

20120319109 - Electronic device and manufacturing thereof: An electronic device and manufacturing thereof. One embodiment provides a semiconductor chip having a control electrode and a first load electrode on a first surface and a second load electrode on a second surface. A first lead is electrically coupled to the control electrode. A second lead is electrically coupled... Agent: Infineon Technologies Ag

20120319110 - Semiconductor structure having test and transistor structures: A semiconductor substrate having transistor structures and test structures with spacing between the transistor structures smaller than the spacing between the test structures is provided. A first iteratively performed deposition and etch process includes: depositing a first doped epitaxial layer having a first concentration of a dopant over the semiconductor... Agent:

20120319111 - Thin-film photoelectric conversion device and method for production thereof: A thin-film photoelectric conversion device includes a crystalline germanium photoelectric conversion layer having improved open circuit voltage, fill factor, and photoelectric conversion efficiency for light having a longer wavelength. The photoelectric conversion device comprises a first electrode layer, one or more photoelectric conversion units, and a second electrode layer sequentially... Agent: Kaneka Corporation

20120319113 - Semiconductor device and method for manufacturing the same: At least part of the oxide semiconductor layer which serves as the channel formation region is thinned by etching and the thickness of the channel formation region is adjusted by the etching. Further, a dopant containing phosphorus (P) or boron (B) is introduced into a thick region of the oxide... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120319114 - Semiconductor device and method for manufacturing the same: A transistor including an oxide semiconductor layer and having electric characteristics required depending on an intended use, and a semiconductor device including the transistor are provided. In a transistor in which a semiconductor layer, a source electrode layer and a drain electrode layer, a gate insulating film, and a gate... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120319112 - Thin film transistor, thin film transistor panel and methods for manufacturing the same: A thin film transistor includes a gate electrode, a gate insulating layer, an oxide semiconductor layer on the gate insulating layer, and a drain electrode and a source electrode on the oxide semiconductor layer and spaced apart from each other. The drain electrode includes a first drain sub-electrode on the... Agent: Samsung Electronics Co., Ltd.

20120319118 - Display device: One object is to provide a transistor including an oxide semiconductor film which is used for the pixel portion of a display device and has high reliability. A display device has a first gate electrode; a first gate insulating film over the first gate electrode; an oxide semiconductor film over... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120319119 - Display substrate and method of manufacturing the same: A display substrate in accordance with one or more embodiments includes a first line pattern, a first insulation layer, a second line pattern, a color filter layer and a pixel electrode, which are formed on a substrate. The first line pattern includes a gate line and a light-blocking layer. The... Agent:

20120319117 - El display panel, el display apparatus, and method of manufacturing el display panel: A light-emitting panel includes a thin film semiconductor that includes a thin film transistor. The thin film transistor includes a gate electrode, a semiconductor layer above the gate electrode, a gate insulating film between the gate electrode and the semiconductor layer, a first electrode electrically connected to the semiconductor layer,... Agent: Panasonic Corporation

20120319115 - Organic light-emitting display device: An organic light-emitting display device including a substrate; a thin film transistor on the substrate, the thin film transistor including an active layer, a gate electrode, and source and drain electrodes that are electrically connected to the active layer; a first resonance layer at the same layer level as the... Agent:

20120319116 - Semiconductor element, method for manufacturing same, display device, and electronic device: A semiconductor element includes: an organic semiconductor layer; an electrode disposed on the organic semiconductor layer so as to be in contact with the organic semiconductor layer; and a wiring layer formed separately from the electrode and electrically connected to the electrode.... Agent: Sony Corporation

20120319121 - Method for manufacturing a semiconductor-on-insulator structure having low electrical losses, and corresponding structure: A manufacturing process for a semiconductor-on-insulator structure having reduced electrical losses and which includes a support substrate made of silicon, an oxide layer and a thin layer of semiconductor material, and a polycrystalline silicon layer interleaved between the support substrate and the oxide layer. The process includes a treatment capable... Agent: Soitec

20120319120 - Semiconductor device and manufacturing method thereof: The disclosure involves a semiconductor device and a manufacturing method thereof. First, a dielectric layer and a stack comprising a Si layer and at least one SiGe layer located on the Si layer are formed in sequence on a substrate. Then the stack and the dielectric layer are patterned to... Agent: Semiconductor Manufacturing International (beijing) Corporation

20120319123 - Display device and method of manufacturing the same: A display device may include a first substrate comprising a display region and a non-display region surrounding the display region, a first metal wiring formed in the display region of the first substrate, a second metal wiring formed in the non-display region of the first substrate, a sealing member formed... Agent: Samsung Mobile Display Co., Ltd.

20120319122 - Organic light-emitting display device including black matrix-containing neutral density film: An organic light-emitting display device including: a substrate; a plurality of pixels each including a first electrode, a second electrode, and an organic emission layer interposed between the first electrode and the second electrode; and a black matrix-containing neutral density (ND) film formed in a direction in which light is... Agent:

20120319124 - Thin film transistor substrate and liquid crystal display device having the same: A display device with a display region and a non-display region surrounding the display region, the display device comprising: a first substrate and a second substrate. The first substrate comprises: a first insulating substrate; a gate line formed on the first insulating substrate; a pixel thin film transistor formed on... Agent: Samsung Electronics Co., Ltd.

20120319127 - Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown p-type gallium nitride as a current blocking layer: A current aperture vertical electron transistor (CAVET) with ammonia (NH3) based molecular beam epitaxy (MBE) grown p-type Gallium Nitride (p-GaN) as a current blocking layer (CBL). Specifically, the CAVET features an active buried Magnesium (Mg) doped GaN layer for current blocking purposes. This structure is very advantageous for high power... Agent: The Regents Of The University Of California

20120319130 - Light emitting device and method of fabricating the same: Provided are a light emitting device and a method of fabricating the same. The light emitting device comprises: a first conductive semiconductor layer; an active layer comprising an InGaN well layer and a GaN barrier layer on the first conductive semiconductor layer; and a second conductive semiconductor layer on the... Agent:

20120319131 - Methods of growing nitride semiconductors and methods of manufacturing nitride semiconductor substrates: Methods of growing nitride semiconductor layers including forming nitride semiconductor dots on a substrate and growing a nitride semiconductor layer on the nitride semiconductor dots. The nitride semiconductor layer may be separated from the substrate to be used as a nitride semiconductor substrate.... Agent:

20120319126 - Optoelectronic semiconductor chip and method for fabrication thereof: An optoelectronic semiconductor chip has a first semiconductor layer sequence which comprises a multiplicity of microdiodes, and a second semiconductor layer sequence which comprises an active region the first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer... Agent: Osram Opto Semiconductors Gmbh

20120319128 - Semiconductor structures, devices and engineered substrates including layers of semiconductor material having reduced lattice strain: Methods of fabricating semiconductor devices or structures include forming structures of a semiconductor material overlying a layer of a compliant material, subsequently changing the viscosity of the compliant material to relax the semiconductor material structures, and utilizing the relaxed semiconductor material structures as a seed layer in forming a continuous... Agent: Soitec

20120319125 - Silicon carbide substrate and method of manufacturing the same: A first single crystal substrate has a first side surface and it is composed of silicon carbide. A second single crystal substrate has a second side surface opposed to the first side surface and it is composed of silicon carbide. A bonding portion connects the first and second side surfaces... Agent: Sumitomo Electric Industries, Ltd.

20120319129 - Substrate, epitaxial layer provided substrate, method for producing substrate, and method for producing epitaxial layer provided substrate: The present invention provides a substrate formed at a low cost and having a controlled plate shape, an epitaxial layer provided substrate obtained by forming an epitaxial layer on the substrate, and methods for producing them. The method for producing the substrate according to the present invention includes an ingot... Agent: Sumitomo Electric Industries, Ltd.

20120319137 - Electrostatic discharge protection element and electrostatic discharge protection chip and method of producing the same: An electrostatic discharge (ESD) protection element includes a collector area, a first barrier area, a semiconductor area, a second barrier area and an emitter area. The collector area has a first conductivity type. The first barrier area borders on the collector area and has a second conductivity type. The semiconductor... Agent: Infineon Technologies Ag

20120319133 - Optically assist-triggered wide bandgap thyristors having positive temperature coefficients: A thyristor includes a first conductivity type semiconductor layer, a first conductivity type carrier injection layer on the semiconductor layer, a second conductivity type drift layer on the carrier injection layer, a first conductivity type base layer on the drift layer, and a second conductivity type anode region on the... Agent:

20120319135 - Semiconductor device and method of manufacturing the same: An electrode layer lies on a silicon carbide substrate in contact therewith and has Ni atoms and Si atoms. The number of Ni atoms is not less than 67% of the total number of Ni atoms and Si atoms. A side of the electrode layer at least in contact with... Agent: Sumitomo Electric Industries, Ltd.

20120319134 - Silicon carbide semiconductor device and method for manufacturing same: A gate electrode includes a polysilicon film in contact with a gate insulating film, a barrier film provided on the polysilicon film, a metal film provided on the barrier film and made of refractory metal. An interlayer insulating film is arranged so as to cover the gate insulating film and... Agent: Sumitomo Electric Industries, Ltd.

20120319136 - Silicon carbide semiconductor device and method for manufacturing the same: A SiC device includes an inversion type MOSFET having: a substrate, a drift layer, and a base region stacked in this order; source and contact regions in upper portions of the base region; a trench penetrating the source and base regions; a gate electrode on a gate insulating film in... Agent: Denso Corporation

20120319132 - Split-gate structure in trench-based silicon carbide power device: An integrated structure includes a plurality of split-gate trench MOSFETs. A plurality of trenches is formed within the silicon carbide substrate composition, each trench is lined with a passivation layer, each trench being substantially filled with a first conductive region a second conductive region and an insulating material having a... Agent: Alpha And Omega Semiconductor Incorporated

20120319139 - Organic electroluminescent member and method for producing organic electroluminescent element: Provided is an organic electroluminescent member comprising: a positive electrode and a negative electrode on a substrate; multiple organic layers which include at least a positive hole transport layer, a light-emitting layer and an electron transport layer, and which are arranged between the positive electrode and the negative electrode; and... Agent: Konica Minolta Holdings, Inc.

20120319138 - Semiconductor light emitting device: According to one embodiment, in a semiconductor light emitting device, a substrate includes a first surface and a second surface opposite to each other, lateral surfaces intersected with the first surface and the second surface, first regions each provided on the lateral surface, and second regions each provided on the... Agent: Kabushiki Kaisha Toshiba

20120319144 - Display panel and display device: Disclosed is a display panel 10 in which a TFT substrate 2 and an opposite substrate 3 are disposed so as to face each other. First electrode pads 18 and 18a are provided on the surface of the TFT substrate 2 facing the opposite substrate 3, and second electrode pads... Agent: Sharp Kabushiki Kaisha

20120319142 - Gel underfill layers for light emitting diodes and methods of fabricating same: A light emitting device is fabricated by providing a mounting substrate and an array of light emitting diode dies adjacent the mounting substrate to define gaps. A gel that is diluted in a solvent is applied on the substrate and on the array of light emitting dies. At least some... Agent: Cree, Inc.

20120319143 - Light emitting device and illumination apparatus including same: A light emitting device includes a plurality of solid-state light emitting elements mounted on a substrate; and a wavelength converting unit covering the solid-state light emitting elements, the wavelength converting unit containing fluorescent materials. The solid-state light emitting elements include inner solid-state light emitting elements arranged in a central position... Agent: Panasonic Corporation

20120319141 - Organic light emitting diode display and method for manufacturing the same: An organic light emitting diode (OLED) display includes a substrate main body, a plurality of organic light emitting elements on the substrate main body, a column spacer on the substrate main body and between two or more of the plurality of organic light emitting elements, and an encapsulation thin film... Agent:

20120319140 - Organic light emitting display module and producing method thereof: An organic light emitting diode (OLED) display module including a first carrier, a second carrier and an OLED display panel is provided. The second carrier disposed on the first carrier is integrally formed with the first carrier. The OLED display panel is disposed on the second carrier. A continuous joint... Agent: Au Optronics Corporation

20120319146 - Fine tuning of emission spectra by combination of multiple emitter spectra: A first device is provided. The first device includes an anode, a cathode and an emissive layer disposed between the anode and the cathode. The emissive layer includes a first organic emitting material having a first peak wavelength and a second organic emitting material having a second peak wavelength. The... Agent: Universal Display Corporation

20120319145 - Non-common capping layer on an organic device: A first method comprises providing a plurality of organic light emitting devices (OLEDs) on a first substrate. Each of the OLEDs includes a transmissive top electrode. The plurality of OLEDs includes a first portion of OLEDs and a second portion of OLEDs that is different from the first portion. The... Agent: Universal Display Corporation

20120319147 - Organic light emitting diode display: An organic light emitting diode (OLED) display includes: a substrate; a first electrode on the substrate; a first emission layer on the first electrode; a second emission layer on the first emission layer; a second electrode on the second emission layer; and a light emitting assistance layer selectively positioned between... Agent:

20120319151 - Cathode for organic light emitting device and organic light emitting device using the cathode: In one aspect, a cathode including the first metal layer, the transparent conductive layer formed on the first metal layer, and the second metal layer formed on the transparent conductive layer is applied to the organic light emitting device and thicknesses of the first metal layer, the transparent conductive layer,... Agent: Samsung Mobile Display Co., Ltd.

20120319148 - Conformal gel layers for light emitting diodes and methods of fabricating same: Light emitting devices include a light emitting diode die on a mounting substrate and a conformal gel layer on the mounting substrate and/or on the light emitting diode die. The conformal gel layer may at least partially fill a gap between the light emitting diode die and the mounting substrate.... Agent: Cree, Inc.

20120319153 - Encapsulating sheet and optical semiconductor element device: An encapsulating sheet includes an encapsulating resin layer and a wavelength conversion layer laminated on the encapsulating resin layer. The wavelength conversion layer is formed by laminating a barrier layer formed of a light transmissive resin composition and having a thickness of 200 μm to 1000 μm, and a phosphor... Agent: Nitto Denko Corporation

20120319152 - Light emitting device package: Provided are a light emitting device package, a method of manufacturing the light emitting device package, and a lighting system. The light emitting device package includes a package body, an electrode layer, a reflective layer, a nanopattern metal layer, a light emitting device, and a molding part. The electrode layer... Agent:

20120319155 - Light-emitting device: Disclosed is a light-emitting device that exhibits good color rendering and highly efficiently emits white light in an incandescent bulb color range. The semiconductor light-emitting device (1) of the present invention includes: a semiconductor light-emitting element (2) that emits blue light; a green phosphor (14) that absorbs the blue light... Agent: Sharp Kabushiki Kaisha

20120319149 - Light-emitting device structure and method for manufacturing the same: A light-emitting device structure and a method for manufacturing the same are described. The light-emitting device structure includes a substrate and an illuminant structure. The substrate has a top surface and a lower surface on opposite sides, and two inclined side surfaces on opposite sides. Two sides of each inclined... Agent: National Cheng Kung University

20120319156 - Nitride semiconductor element and manufacturing method therefor: An exemplary nitride-based semiconductor device includes: a nitride-based semiconductor multilayer structure 20 which has a p-type GaN-based semiconductor region whose surface 12 is inclined from the m-plane by an angle of not less than 1° and not more than 5° or the principal surface has a plurality of m-plane steps;... Agent: Panasonic Corporation

20120319150 - Semiconductor light emitting device and method for manufacturing the same: According to one embodiment, a method for manufacturing a semiconductor light emitting device includes: preparing a metal plate including first frames and second frames, the first frames and the second frames being alternately arranged and spaced from each other, a light emitting element being fixed to each of the first... Agent: Kabushiki Kaisha Toshiba

20120319154 - Silicone resin composition, encapsulating layer, reflector, and optical semiconductor device: A silicone resin composition includes a cage octasilsesquioxane; a polysiloxane containing alkenyl groups at both ends containing an alkenyl group having the number of moles smaller than the number of moles of the hydrosilyl group of the cage octasilsesquioxane; a hydrosilylation catalyst; a hydroxyl group-containing polysiloxane, organohydrogenpolysiloxane, or a polysiloxane... Agent: Nitto Denko Corporation

20120319158 - Led light emitting module and manufacturing method thereof: An LED light-emitting module and a manufacturing method thereof are provided. The LED light-emitting module comprises a substrate provided with at least one LED core, wherein the substrate has an interlayer made of ceramic materials and coated with copper foils at two sides; the copper foil at one side of... Agent:

20120319157 - Photoelectric conversion device: To provide a heterojunction photoelectric conversion device including passivation layers for reducing surface defects of a silicon substrate. The photoelectric conversion device includes a first silicon semiconductor layer which is in contact with one surface of a single crystal silicon substrate; a second silicon semiconductor layer which is in contact... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120319159 - Substrate for light-emitting element, method for manufacturing the same and light-emitting device: There is provided a substrate for light-emitting element, including a mounting surface on which a light-emitting element is to be mounted, the mounting surface being one of two opposed main surfaces of the substrate. The substrate of the present invention is provided with a protection element for the light-emitting element,... Agent:

20120319162 - Method for manufacturing nitride semiconductor device, nitride semiconductor light-emitting device, and light-emitting apparatus: Provided is a method for manufacturing a nitride semiconductor device, including the steps of: forming an AlNO buffer layer containing at least aluminum, nitrogen, and oxygen on a substrate; and forming a nitride semiconductor layer on the AlNO buffer layer, wherein, in the step of forming the AlNO buffer layer,... Agent: Sharp Kabushiki Kaisha

20120319161 - Method for manufacturing semiconductor light emitting device and semiconductor light emitting device wafer: According to one embodiment, a method is disclosed for manufacturing a semiconductor light emitting device. The method can include forming a nitride semiconductor layer including a light emitting layer on a first substrate having an unevenness, bonding the nitride layer to a second substrate, and separating the first substrate from... Agent: Kabushiki Kaisha Toshiba

20120319160 - Method for reducing stress in epitaxial growth: A device and method for making the same are disclosed. The device includes a substrate having a first TEC, a stress relief layer overlying the substrate, and crystalline cap layer. The crystalline cap layer overlies the stress relief layer. The cap layer has a second TEC different from the first... Agent:

20120319163 - Semiconductor device including insulated gate bipolar transistor and diode: A semiconductor device includes an IGBT forming region and a diode forming region. The IGBT forming region includes an IGBT operating section that operates as an IGBT and a thinned-out section that does not operate as an IGBT. The IGBT operating section includes a channel region, and the thinned-out section... Agent: Denso Corporation

20120319164 - Semiconductor device: According to one embodiment, a semiconductor device that has a rectification element includes a semiconductor substrate, a first well region of a first conductivity type formed on the semiconductor substrate, a second well region of a second conductivity type formed on the semiconductor substrate, and a plurality of fins arranged... Agent: Kabushiki Kaisha Toshiba

20120319165 - Semiconductor device and method of manufacturing same: Object of the invention is to reduce the on resistance between source and drain of a nitride semiconductor device. Between a nitride semiconductor layer lying between source and drain regions and a nitride semiconductor layer serving as an underlying layer, formed is a material having an electron affinity greater than... Agent: Renesas Electronics Corporation

20120319167 - Mask-less and implant free formation of complementary tunnel field effect transistors: A device includes a first source/drain region of a first conductivity type over a silicon substrate, wherein the first source/drain region is at a higher step of a two-step profile. The first source/drain region includes a germanium-containing region. A second source/drain region is of a second conductivity type opposite the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120319168 - Semiconductor device and manufacturing method thereof: A semiconductor device and manufacturing method therefor includes a Σ-shaped embedded source or drain regions. A U-shaped recess is formed in a Si substrate using dry etching and a SiGe layer is grown epitaxially on the bottom of the U-shaped recess. Using an orientation selective etchant having a higher etching... Agent: Semiconductor Manufacturing International (beijing) Corporation

20120319166 - Transistor with buried silicon germanium for improved proximity control and optimized recess shape: A method of forming a semiconductor device that includes providing a substrate including a semiconductor layer on a germanium-containing silicon layer and forming a gate structure on a surface of a channel portion of the semiconductor layer. Well trenches are etched into the semiconductor layer on opposing sides of the... Agent: International Business Machines Corporation

20120319169 - Cmos compatible method for manufacturing a hemt device and the hemt device thereof: A method for manufacturing a III-nitride HEMT having a gate electrode and source and drain ohmic contacts is provided, comprising providing a substrate; forming a stack of III-nitride layers on the substrate; forming a first passivation layer comprising silicon nitride overlying and in contact with an upper layer of the... Agent: Imec

20120319170 - Electronic device and method for producing electronic device: Electronic device is provided, including: a base wafer whose surface is made of silicon crystal; a Group 3-5 compound semiconductor crystal formed directly or indirectly on partial region of the silicon crystal; an electronic element including a portion of the Group 3-5 compound semiconductor crystal as active layer; an insulating... Agent: Sumitomo Chemical Company, Limited

20120319171 - Semiconductor wafer, semiconductor device, and a method of producing a semiconductor wafer: A semiconductor wafer includes a base wafer, a first crystal layer, a second crystal layer and a third crystal layer. The first crystal layer has a first surface having a same orientation as the base wafer, and a second surface having a different orientation from the first surface, the second... Agent: Sumitomo Chemical Company, Limited

20120319172 - Charge-trap based memory: Methods of fabricating 3D charge-trap memory cells are described, along with apparatus and systems that include them. In a planar stack formed by alternate layers of electrically conductive and insulating material, a substantially vertical opening may be formed. Inside the vertical opening a substantially vertical structure may be formed that... Agent:

20120319173 - Nonvolatile semiconductor memory device, three-dimensional semiconductor device, and method of manufacturing the same: A three-dimensional semiconductor device includes a semiconductor substrate, a plurality of conductive layers and insulating layers, and a plurality of contacts. The plurality of conductive layers and insulating layers are stacked alternately above the semiconductor substrate. The plurality of contacts extend in a stacking direction of the plurality of conductive... Agent: Kabushiki Kaisha Toshiba

20120319174 - Cmos compatible mems microphone and method for manufacturing the same: The present invention relates to a CMOS compatible MEMS microphone, comprising: an SOI substrate, wherein a CMOS circuitry is accommodated on its silicon device layer; a microphone diaphragm formed with a part of the silicon device layer, wherein the microphone diaphragm is doped to become conductive; a microphone backplate including... Agent: Goertek Inc.

20120319175 - Semiconductor device and a method for manufacturing the same: A transistor in which an electron state at an interface between an oxide semiconductor film and an underlayer film in contact with the oxide semiconductor film is favorable is provided. A value obtained by dividing a difference between nearest neighbor interatomic distance of the underlayer film within the interface and... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120319176 - Gated-varactors: In at least one embodiment, a method of manufacturing a varactor includes forming a well over a substrate. The well has a first type doping. A first source region and a second source region are formed in the well, and the first source region and the second source region have... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120319177 - Junction field effect transistor, integrated circuit for switching power supply, and switching power supply: A switching power supply has a start-up circuit that includes a field effect transistor (JFET), which has a gate region (a p-type well region) formed in a surface layer of a p-type substrate and a drift region (a first n-type well region). A plurality of source regions (second n-type well... Agent: Fuji Electric Co., Ltd.

20120319178 - Double gate planar field effect transistors: A stacked planar device and method for forming the same is shown that includes forming, on a substrate, a stack of layers having alternating sacrificial and channel layers, patterning the stack such that sides of the stack include exposed surfaces of the sacrificial and channel layers, forming a dummy gate... Agent: International Business Machines Corporation

20120319180 - Large dimension device and method of manufacturing same in gate last process: An integrated circuit device and methods of manufacturing the same are disclosed. In an example, integrated circuit device includes a gate structure disposed over a substrate; a source region and a drain region disposed in the substrate, wherein the gate structure interposes the source region and the drain region; and... Agent:

20120319179 - Metal gate and fabrication method thereof: A metal gate includes a substrate, a gate dielectric layer, a work function metal layer, an aluminum nitride layer and a stop layer. The gate dielectric layer is located on the substrate. The work function metal layer is located on the gate dielectric layer. The aluminum nitride layer is located... Agent:

20120319184 - Methods and devices for shielding a signal line over an active region: A multi-path transistor includes an active region including a channel region and an impurity region. A gate is dielectrically separated from the channel region. A signal line is dielectrically separated from the impurity region. A conductive shield is disposed between, and dielectrically separated from, the signal line and the channel... Agent: Micron Technology, Inc.

20120319183 - Semiconductor device and manufacturing method thereof: One object of the present invention is to provide a structure of a transistor including an oxide semiconductor in a channel formation region in which the threshold voltage of electric characteristics of the transistor can be positive, which is a so-called normally-off switching element, and a manufacturing method thereof. A... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120319182 - Semiconductor device production method and semiconductor device: A semiconductor device production method includes: forming in a silicon substrate first and second region of first and second conductivity type in contact with each other; forming a gate electrode above the first and the second region; forming an insulation film covering part of the gate electrode and part of... Agent: Fujitsu Semiconductor Limited

20120319181 - Semiconductor structure and method for manufacturing the same: The present invention provides a semiconductor structure, which comprises a substrate, a semiconductor base, a cavity, a gate stack, sidewall spacers, source/drain regions and a contact layer; wherein, the gate stack is located on the semiconductor base, the sidewall spacers are located on sidewalls of the gate stack, the source/drain... Agent: Institute Of Microelectronics, Chinese Academy Of Sciences

20120319185 - Nand structure and method of manufacturing the same: The present invention provides a NAND gate structure, comprising: a substrate; a gate insulation layer formed on the substrate; a source/drain region formed in the substrate; a middle gate formed on the gate insulator layer, a first gate and a second gate on each side of the middle gate, first... Agent: Institute Of Microelectronics, Chinese Academy Of Sciences

20120319186 - Memory device and method for fabricating the same: A method for forming a memory device includes: forming a tunnel insulation layer, a conductive layer for a floating gate electrode, a charge blocking layer and a conductive layer for a control gate electrode over a substrate; and selectively etching the conductive layer for the control gate electrode, the charge... Agent: Hynix Semiconductor Inc.

20120319187 - Semiconductor device: For providing a cheap semiconductor memory device with improving reliability by level of a cell, in the place of escaping from defects on memory cells electrically, through such as ECC, and further for providing a cell structure enabling scaling-down in the vertical direction with maintaining the reliability, in a semiconductor... Agent: Renesas Electronics Corporation

20120319188 - Electronic device including a gate electrode and a gate tap and a process of forming the same: An electronic device can include a gate electrode and a gate tap that makes an unlanded contact to the gate electrode. The electronic device can further include a source region and a drain region that may include a drift region. In an embodiment, the gate electrode has a height that... Agent:

20120319189 - High-voltage semiconductor device: The present invention provides a high-voltage semiconductor device including a deep well, a first doped region disposed in the deep well, a high-voltage well, a second doped region disposed in the high-voltage well, a first gate structure disposed on the high-voltage well between the second doped region and the first... Agent:

20120319192 - Gate structures: An apparatus includes a first device. The first device includes a first projection and a first gate structure, the first projection extending upwardly from a substrate and having a first channel region therein, and the first gate structure engaging the first projection adjacent the first channel region. The first structure... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120319191 - Process for manufacturing a semiconductor power device comprising charge-balance column structures and respective device: Process for manufacturing a semiconductor power device, wherein a trench is formed in a semiconductor body having a first conductivity type; the trench is annealed for shaping purpose; and the trench is filled with semiconductor material via epitaxial growth so as to obtain a first column having a second conductivity... Agent: Stmicroelectronics S.r.l.

20120319190 - Semiconductor device and method for manufacturing the same: Semiconductor devices and methods for manufacturing the same are disclosed. In one embodiment, the semiconductor device comprises a semiconductor substrate; an insulating layer located on the semiconductor substrate; a semiconductor body located on the insulating layer; a cavity formed in the semiconductor body and into the insulating layer; source/drain regions... Agent: Institute Of Microelectronics, Chinese Academy Of Sciences

20120319193 - Manufacturing of a semiconductor device and corresponding semiconductor device: The disclosed method of manufacturing (110, 120, 130, 140) a semiconductor device (12) has the steps (112, 114, 116) of: forming at least one wall (33) of a body (44) of the semiconductor device (12) by etching at least one trench (22) for a gate (42) of the semiconductor... Agent:

20120319196 - Semiconductor device: A semiconductor device includes a transistor with a substrate on which source and drain regions, both of a first conductivity type, and a channel region of a second conductivity type between the source and drain are formed, and a gate electrode formed in the channel region to bury a trench... Agent: Renesas Electronics Corporation

20120319195 - Semiconductor device and method for manufacturing the same: The present invention relates to a semiconductor device and a method for manufacturing the same. According to the present invention, a method of manufacturing a semiconductor device includes: forming a recess on a semiconductor substrate; forming a first gate electrode material and a hard mask layer on an entire surface... Agent: Hynix Semiconductor Inc.

20120319194 - Semiconductor device and process for producing the same: A trench gate transistor whose gate changes depth intermittently in the gate width direction, has a first offset region and a second offset region formed below the source and drain, respectively. The first offset region and the second offset region are shallower where they contact the device isolation film than... Agent: Renesas Electronics Corporation

20120319197 - Field effect transistor and schottky diode structures: In accordance with an embodiment a structure can include a monolithically integrated trench field-effect transistor (FET) and Schottky diode. The structure can include a first gate trench extending into a semiconductor region, a second gate trench extending into the semiconductor region, and a source region flanking a side of the... Agent:

20120319198 - Semiconductor device and fabrication method thereof: A semiconductor device including a substrate, a spacer and a high-k dielectric layer having a U-shape profile is provided. The spacer located on the substrate surrounds and defines a trench. The high-k dielectric layer having a U-shape profile is located in the trench, and the high-k dielectric layer having a... Agent:

20120319199 - Trench gated power device with multiple trench width and its fabrication process: Power devices, and related process, where both gate and field plate trenches have multiple stepped widths, using self-aligned process steps.... Agent: Maxpower Semiconductor, Inc.

20120319200 - Monolithically integrated circuit: A monolithically integrated circuit, particularly an integrated circuit for radio frequency power applications, may include a transistor and a spiral inductor. The spiral inductor is arranged above the transistor. An electromagnetic coupling is created between the transistor and the inductor. The transistor may have a finger type layout to prevent... Agent:

20120319201 - Semiconductor devices having vertical device and non-vertical device and methods of forming the same: In a semiconductor device, a vertical transistor comprises: a first diffusion region on a substrate; a channel region on the first diffusion region and extending in a vertical direction; a second diffusion region on the channel region; and a gate electrode at a sidewall of, and insulated from, the channel... Agent: Samsung Electronics Co., Ltd.

20120319202 - High voltage device and manufacturing method thereof: The present invention discloses a high voltage device and a manufacturing method thereof. The high voltage device includes: a first conductive type substrate having a device region; a gate, which is located on a surface of the substrate; a second conductive type source and a second conductive type drain in... Agent: Richtek Technology Corporation, R.o. C.

20120319203 - Semiconductor device and method of manufacturing the same: An integrated circuit device and method for manufacturing the integrated circuit device is disclosed. The disclosed device comprises a gate structure over a substrate and defining a channel region in the substrate, an epitaxial feature with a first dopant in the substrate, and an epitaxial source/drain feature with a second... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120319204 - Triggerable bidirectional semiconductor device: A triggerable bidirectional semiconductor device has two terminals and at least one gate. The device comprises, within a layer of silicon on insulator, a central semiconductor zone incorporating the at least one gate and comprising a central region having a first conductivity type, two intermediate regions having a second conductivity... Agent: Stmicroelectronics Sa

20120319205 - High-k metal gate electrode structures formed by reducing a gate fill aspect ratio in replacement gate technology: When forming sophisticated high-k metal gate electrode structures on the basis of a replacement gate approach, the fill conditions upon filling in the highly conductive electrode metal, such as aluminum, may be enhanced by removing an upper portion of the final work function metal, for instance a titanium nitride material... Agent: Globalfoundries Inc.

20120319206 - Integrated circuit comprising an isolating trench and corresponding method: An integrated circuit including at least one isolating trench that delimits an active area made of a monocrystalline semiconductor material, the or each trench comprising an upper portion including an insulating layer that encapsulates a lower portion of the trench, the lower portion being at least partly buried in the... Agent: Stmicroelectronics (crolles 2) Sas

20120319208 - Methods of fabricating semiconductor devices and structures thereof: Methods of fabricating semiconductor devices and structures thereof are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes forming a gate material stack over a workpiece having a first region and a second region. A composition or a thickness of at least one of a plurality of... Agent: Infineon Technologies Ag

20120319207 - Semiconductor device with threshold voltage control and method of fabricating the same: Semiconductor devices and methods of making semiconductor devices are provided. According to one embodiment, the field effect transistor can contain a semiconductor substrate containing shallow trench isolations; a p-FET and an n-FET; a silicon germanium layer in a recess in the upper surface of the p-FET; a pair of gate... Agent: Toshiba America Electronic Components, Inc.

20120319209 - Semiconductor device having mixedly mounted components with common film layers and method of manufacturing the same: A metal gate electrode and a poly-silicon resistance element are mixedly mounted in the same semiconductor substrate. The metal gate electrode is formed on a first gate insulating film and includes a first gate metal film and a first gate silicon film. The poly-silicon resistance element includes a silicon film... Agent: Renesas Electronics Corporation

20120319210 - Method for 1/f noise reduction in nmos devices: An integrated circuit, in which a minimum gate length of low-noise NMOS transistors is less than twice a minimum gate length of logic NMOS transistors, is formed by: forming gates of the low-noise NMOS transistors concurrently with gates of the logic NMOS transistors, forming a low-noise NMDD implant mask which... Agent: Texas Instruments Incorporated

20120319212 - Sram structure with finfets having multiple fins: A static random access memory (SRAM) cell includes a straight fin and a bended fin physically disconnected from the straight fin. The bended fin has a first portion and a second portion parallel to the straight fin. The distance between the first portion of the bended fin and the straight... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120319211 - Strained channel field effect transistor: The present disclosure provides a semiconductor device with a strained SiGe channel and a method for fabricating such a device. In an embodiment, a semiconductor device includes a substrate including at least two isolation features, a fin substrate disposed between and above the at least two isolation features, and an... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120319213 - Semiconductor structure and method for manufacturing the same: The present invention provides a method for manufacturing a semiconductor structure, comprising: forming a first contact layer on an exposed active region of a first spacer; forming a second spacer at a region of the first contact layer close to a gate stack to partially cover the exposed active region;... Agent: Institute Of Microelectronics, Chinese Academy Of Sciences

20120319215 - Semiconductor device and method of manufacturing the same: The present invention discloses a semiconductor device and method of manufacturing the same, comprising: forming an insulating isolation layer on a substrate; forming an insulating isolation layer trench in the insulating isolation layer; forming an active region layer in the insulating isolation layer trench; and forming a semiconductor device structure... Agent:

20120319214 - Structure of metal gate and fabrication method thereof: A method for fabricating a metal gate includes the following steps. First, a substrate having an interfacial dielectric layer above the substrate is provided. Then, a gate trench having a barrier layer is formed in the interfacial dielectric layer. A source layer is disposed above the barrier layer. Next, a... Agent:

20120319216 - Semiconductor device and manufacturing method: A semiconductor device having reduced leakage current and increased capacitance without increasing an equivalent oxide thickness (EOT) can be manufactured by a method that includes providing a substrate having a dummy gate pattern; forming a gate forming trench by removing the dummy gate pattern; forming a stacked insulation layer within... Agent:

20120319218 - Apparatuses for generating electrical energy: Electrical energy generation apparatuses, in which a solar battery device and a piezoelectric device are combined in a single body by using a plurality of nano wires formed of a semiconductor material having piezoelectric properties.... Agent:

20120319217 - Semiconductor devices and methods of fabrication thereof: In one embodiment, a method of manufacturing a semiconductor device includes oxidizing a substrate to form local oxide regions that extend above a top surface of the substrate. A membrane layer is formed over the local oxide regions and the top surface of the substrate. A portion of the substrate... Agent:

20120319219 - Epitaxial silicon cmos-mems microphones and method for manufacturing: A method of manufacturing a microphone using epitaxially grown silicon. A monolithic wafer structure is provided. A wafer surface of the structure includes poly-crystalline silicon in a first horizontal region and mono-crystalline silicon in a second horizontal region surrounding a perimeter of the first horizontal region. A hybrid silicon layer... Agent: Robert Bosch Gmbh

20120319220 - Method of bonding semiconductor substrate and mems device: A method of bonding a semiconductor substrate having a substrate 11 formed with a MEMS sensor and a substrate 21 having a bonding portion 30b film-formed by contacting an aluminum containing layer 31 with a germanium layer 32 on either a front surface or a rear surface and formed with... Agent: Pioneer Corporation

20120319221 - Method and system for providing a magnetic junction configured for precessional switching using a bias structure: A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a first pinned layer having a first pinned layer magnetization, a first nonmagnetic spacer layer, and a free layer having an easy axis. The first nonmagnetic spacer layer is between the first pinned... Agent:

20120319223 - Diffuse omni-directional back reflectors and methods of manufacturing the same: Ultra-high reflectivity is projected for internal reflectors comprised of a metal film and nanostructured transparent conductive oxide (TCO) bi-layer on the back side of a semiconductor device. Oblique-angle deposition can be used to fabricate indium tin oxide (ITO) and other TCO optical thin-film coatings with a porous, columnar nanostructure. The... Agent: Magnolia Solar, Inc.

20120319222 - Solid-state imaging element, solid-state imaging device, imaging apparatus, and method of manufacturing polarizing element: The present invention relates to a solid-state imaging element which is able to provide the solid-state imaging element having a polarizing element having a simple configuration and structure based on a wire grid polarizer technique, a solid-state imaging device, an imaging apparatus, and a method of manufacturing a polarizing element.... Agent: Sony Corporation

20120319224 - Image pickup device and camera: An object is to provide a solid state image pickup device and a camera which do not worsen a sensor performance in terms of an optical property, a saturated charge amount and the like. A solid state image sensor including a pixel region having a plurality of pixels includes at... Agent: Canon Kabushiki Kaisha

20120319225 - Dynamically configurable photovoltaic cell array: Embodiments of the present invention relate to photovoltaic cells. Specifically, the present invention relates to photovoltaic (PV) cells configurable for energy conversion and imaging. In a typical embodiment, each photovoltaic cell (PV) in the photovoltaic array is divided into a pixel-based array. Each photovoltaic cell is coupled to a set... Agent:

20120319226 - Fabrication of robust electrothermal mems with fast thermal response: Embodiments of the invention provide robust electrothermal MEMS with fast thermal response. In one embodiment, an electrothermal bimorph actuator is fabricated using aluminum as one bimorph layer and tungsten as the second bimorph layer. The heating element can be the aluminum or the tungsten, or a combination of aluminum and... Agent: University Of Florida Research Foundation, Incorporated

20120319227 - Bipolar punch-through semiconductor device and method for manufacturing such a semiconductor device: A bipolar diode is provided having a drift layer of a first conductivity type on a cathode side and an anode layer of a second conductivity type on an anode side. The anode layer includes a diffused anode contact layer and a double diffused anode buffer layer. The anode contact... Agent: Abb Technology Ag

20120319228 - Semiconductor device: A semiconductor device is disclosed, which includes first and second power supply pads supplied with first and second power voltages, respectively, a first protection circuit coupled between the first and second power supply pads, and an internal circuit including a first power line and a plurality of transistors electrically coupled... Agent: Elpida Memory, Inc.

20120319229 - Shielding for high-voltage semiconductor-on-insulator devices: Integrated circuits having doped bands in a substrate and beneath high-voltage semiconductor-on-insulator (SOI) devices are provided. In one embodiment, the invention provides an integrated circuit comprising: a semiconductor-on-insulator (SOI) wafer including: a substrate; a buried oxide (BOX) layer atop the substrate; and a semiconductor layer atop the BOX layer; a... Agent: International Business Machines Corporation

20120319230 - Etching narrow, tall dielectric isolation structures from a dielectric layer: Methods of forming isolation structures are disclosed. A method of forming isolation structures for an image sensor array of one aspect may include forming a dielectric layer over a semiconductor substrate. Narrow, tall dielectric isolation structures may be formed from the dielectric layer. The narrow, tall dielectric isolation structures may... Agent:

20120319231 - Microelectronic device including shallow trench isolation structures having rounded bottom surfaces: Methods for rounding the bottom corners of a shallow trench isolation structure are described herein. Embodiments of the present invention provide a method comprising forming a first masking layer on a sidewall of an opening in a substrate, removing, to a first depth, a first portion of the substrate at... Agent: Marvell Wold Trade Ltd.

20120319232 - Self-aligned dual depth isolation and method of fabrication: FDSOI devices and methods for the fabrication thereof are provided. In one aspect, a method for fabricating a device includes the following steps. A wafer is provided having a substrate, a BOX and a SOI layer. A hardmask layer is deposited over the SOI layer. A photoresist layer is deposited... Agent: International Business Machines Corporation

20120319233 - Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for bicmos integration: High performance bipolar transistors with raised extrinsic self-aligned base are integrated into a BiCMOS structure containing CMOS devices. By forming pad layers and raising the height of an intrinsic base layer relative to the source and drain of preexisting CMOS devices and by forming an extrinsic base through selective epitaxy,... Agent: International Business Machines Corporation

20120319234 - E-fuse structures and methods of operating and manufacturing the same: An e-fuse structure includes a first doped region and a second doped region formed in a substrate. The first doped region has a first conductivity type and the second doped region has a second conductivity type different from the first conductivity type. The first and second doped regions contact each... Agent:

20120319235 - Semiconductor device with a fuse formed by a damascene technique and a method of manufacturing the same: In order to improve the reliability of a semiconductor device having a fuse formed by a Damascene technique, a barrier insulating film and an inter-layer insulating film are deposited over a fourth-layer wiring and a fuse. The barrier insulating film is an insulating film for preventing the diffusion of Cu... Agent: Renesas Electronics Corporation

20120319237 - Corner-rounded structures and methods of manufacture: Corner-rounded structures and methods of manufacture are provided. The method includes forming at least two conductive wires with rounded corners on a substrate. The method further includes forming a insulator film on the substrate and between the at least two conductive wires with the rounded corners.... Agent: International Business Machines Corporation

20120319236 - Integrated circuit inductors with intertwined conductors: An inductor may be formed from a conductive path that includes intertwined conductive lines. There may be two, three, or more than three intertwined conductive lines in the conductive path. The conductive lines may be formed from conductive structures in the dielectric stack of an integrated circuit. The dielectric stack... Agent:

20120319238 - Large dimension device and method of manufacturing same in gate last process: An integrated circuit device and methods of manufacturing the same are disclosed. In an example, integrated circuit device includes a capacitor having a doped region disposed in a semiconductor substrate, a dielectric layer disposed over the doped region, and an electrode disposed over the dielectric layer. At least one post... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120319239 - Semiconductor structures and methods of forming the same: A semiconductor structure includes a through-substrate-via (TSV) structure disposed in a substrate. A first etch stop layer is disposed over the TSV structure. A first dielectric layer is disposed in contact with the first etch stop layer. A first conductive structure is disposed through the first etch stop layer and... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120319240 - High voltage resistor with pin diode isolation: Provided is a high voltage semiconductor device that includes a PIN diode structure formed in a substrate. The PIN diode includes an intrinsic region located between a first doped well and a second doped well. The first and second doped wells have opposite doping polarities and greater doping concentration levels... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120319241 - Offset reducing resistor circuit: The resistor segments may be placed in a spatial region of an integrated circuit. Junctions formed between the resistor segments and conductors may be placed at locations such that each junction has a paired counterpart of the same type that is spaced to form respective same junction type centroids (i.e.,... Agent: Analog Devices, Inc.

20120319242 - Dopant implantation hardmask for forming doped isolation regions in image sensors: Forming a doped isolation region in a substrate during manufacture of an image sensor. A method of an aspect includes forming a hardmask layer over the substrate, and forming a photoresist layer over the hardmask layer. An opening is formed in the photoresist layer over an intended location of the... Agent:

20120319243 - Bipolar junction transistor: In accordance with one embodiment, the present invention provides a bipolar junction transistor including an emitter region; a base region; a first isolation between the emitter region and the base region; a gate on the first isolation region and overlapping at least a portion of a periphery of the emitter... Agent:

20120319244 - Method for manufacturing semiconductor layer, method for manufacturing photoelectric conversion device, and semiconductor layer forming solution: A method for manufacturing a semiconductor layer according to an embodiment of the present invention comprises preparing a first compound, preparing a second compound, making a semiconductor layer forming solution, and forming a semiconductor layer including a group compound by using this semiconductor layer forming solution. The first compound contains... Agent: Kyocera Corporation

20120319246 - Ip protection: Multi-Project Wafers includes a plurality of chiplets from different IP owners. Non-relevant chiplets are implemented with IP protection to inhibit IP disclosure of non-relevant IP owners.... Agent: International Business Machines Corporation

20120319247 - Semiconductor device structures including a mask material: A method for fabricating semiconductor device structures includes forming a non-conformal mask over a surface of a substrate. Non-conformal mask material with a planar or substantially planar upper surface is formed on the surface of the substrate. The planarity or substantial planarity of the non-conformal material eliminates or substantially eliminates... Agent: Micron Technology, Inc.

20120319245 - Vented substrate for semiconductor device: A substrate with a vent for a semiconductor device where the vent is integrated within the substrate itself. The integrated air vent forms a passageway or relief path for gas or air within a mold cavity to escape during a transfer molding packaging process. The vents integrated in the substrate... Agent: Freescale Semiconductor, Inc

20120319248 - Stress-aware design for integrated circuits: A method of circuit design involving an integrated circuit (IC) having an interposer can include identifying an active resource implemented within the IC within a region of the interposer exposed to an amount of stress that exceeds a normalized amount of stress on the interposer and selectively assigning an element... Agent: Xilinx, Inc.

20120319249 - Semiconductor chip, semiconductor wafer and semiconductor chip manufacturing method: The semiconductor chip (18) of the present invention is a semiconductor chip (18) on which a power semiconductor device (10) is formed, and which includes a semiconductor substrate made from a hexagonal semiconductor, in which the semiconductor substrate has a shape of a rectangle on a principal surface, in which... Agent: Panasonic Corporation

20120319250 - Back-side contact formation: In one embodiment, a semiconductor is provided comprising a substrate and a plurality of wiring layers and dielectric layers formed on the substrate, the wiring layers implementing a circuit. The dielectric layers separate adjacent ones of the plurality of wiring layers. A first passivation layer is formed on the plurality... Agent:

20120319251 - Solder ball protection structure with thick polymer layer: An integrated circuit structure includes a substrate and a metal pad over the substrate. A post-passivation interconnect (PPI) line is connected to the metal pad, wherein the PPI line includes at least a portion over the metal pad. A PPI pad is connected to the PPI line. A polymer layer... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120319252 - Method for manufacturing semiconductor device, substrate processing apparatus, and semiconductor device: A method for manufacturing a semiconductor device includes performing a cycle a predetermined number of times to form a film on a substrate. The cycle includes feeding a first material containing a first element, to be adsorbed on a substrate surface, to a processing chamber where the substrate is accommodated;... Agent: Hitachi Kokusai Electric Inc.

20120319253 - Semiconductor module manufacturing method, semiconductor module, and manufacturing device: In the disclosed method for manufacturing a semiconductor module, a metal layer and a cooler, which have different coefficients of thermal expansion from each other, are joined into a single unit via an insulating resin sheet. A work, comprising a semiconductor element placed on the metal layer with solder interposed... Agent: Toyota Jidosha Kabushiki Kaisha

20120319254 - Wiring board with built-in semiconductor element: A wiring board including a built-in semiconductor element includes the semiconductor element, a peripheral insulating layer covering an outer peripheral side surface of the semiconductor element, an upper surface-side wiring provided on an upper surface side of the wiring board, and a lower surface-side wiring provided on a lower surface... Agent: Nec Corporation

20120319256 - Semiconductor package for mems device and method of manufacturing same: In some embodiments, a semiconductor package can include: (a) a base having a cavity; (b) an interposer coupled to the base and at least partially over the cavity such that the interposer and the base form a back chamber, the interposer has a first opening into the back chamber; (c)... Agent: Ubotic Intellectual Property Company Limited

20120319257 - Semiconductor storage device and manufacturing method thereof: According to one embodiment, a semiconductor storage device includes an organic board provided with external connection terminals on one surface and formed as an individual piece into a plane shape substantially identical to that of an area where the external connection terminals are provided, a lead frame having a mounting... Agent: Kabushiki Kaisha Toshiba

20120319255 - Thermal enhanced high density flip chip package: Systems and methods according to embodiments of the invention enable flip chip packaging using high density routing while minimizing the thickness and layer count of the flip chip package. By using a photoresist layer to create very fine traces on a metallic base layer, embodiments of the present invention combine... Agent: Broadcom Corporation

20120319259 - Power module package and method for fabricating the same: Disclosed herein are a power module package and a method for manufacturing the same. The power module package includes: first and second lead frames arranged to face each other, both or either of the first and second frames being made of aluminum; anodized layers formed on portions of the lead... Agent: Samsung Electro-mechanics Co., Ltd.

20120319260 - Power module package and system module having the same: Disclosed herein is a power module package, including: a first substrate having first semiconductor chips mounted thereon; and a second substrate having second semiconductor chips mounted thereon, the second substrate being coupled with the first substrate such that a side surface in a thickness direction thereof is disposed on an... Agent: Samsung Electro-mechanics Co., Ltd.

20120319258 - Stack frame for electrical connections and the method to fabricate thereof: A method of forming a conductive pattern on a metallic frame for manufacturing a stack frame for electrical connections is disclosed. In one embodiment, a recess is formed in the metallic frame and a conductive element is bonded in the recess to make a stack frame for electrical connections. In... Agent: Cyntec Co., Ltd.

20120319261 - Hermetically sealed wafer packages: Hermetically sealed semiconductor wafer packages that include a first bond ring on a first wafer facing a complementary surface of a second bond ring on a second wafer. The package includes first and second standoffs of a first material, having a first thickness, formed on a surface of the first... Agent: Raytheon Company

20120319262 - Integrated circuit packaging system with support structure and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: forming a mountable assembly includes: forming an integrated circuit device having a non-horizontal device side, an active device side, and a passive device side, providing a first integrated circuit die having an active side, a passive side, and an... Agent:

20120319263 - Integrated circuit packaging system with intra substrate die and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing a substrate having a through hole; mounting an integrated circuit in the through hole, the integrated circuit having an inactive side and a vertical side; connecting a first interconnect in direct contact with the integrated circuit and the... Agent:

20120319264 - Semiconductor device with heat spreader: A BGA type semiconductor device includes: a substrate having wirings and electrodes; a semiconductor element disposed on the substrate, having a rectangular plan shape, and a plurality of electrodes disposed along each side of the semiconductor element; a plurality of wires connecting the electrodes on the semiconductor element with the... Agent: Fujitsu Semiconductor Limited

20120319265 - Integrated circuit packaging system with molded laser via interposer and method of manufacture thereof: A method of manufacture of an integrated packaging system includes: providing a substrate; mounting an integrated circuit on the substrate; mounting an interposer substrate having an interposer pad on the integrated circuit; covering an encapsulant over the integrated circuit and the interposer substrate; forming a hole through the encapsulant aligned... Agent:

20120319266 - Integrated circuit packaging system with encapsulation and underfill and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing a package carrier having a dispense port; attaching an integrated circuit to the package carrier and over the dispense port; placing a mold chase over the integrated circuit and on the package carrier, the mold chase having a... Agent:

20120319267 - Integrated circuit packaging system with thermal dispersal structures and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing a base substrate; attaching a package stack assembly, having a contact pad, on the base substrate; applying an encapsulation having a cavity with a tapered side directly over the package stack assembly, the contact pad exposed in the... Agent:

20120319268 - Conductive connection sheet, method for connecting terminals, method for forming connection terminal, semiconductor device, and electronic device: A conductive connecting sheet (1) of the present invention is composed of a layered body including resin composition layers (11, 13) and a metal layer (12), and each resin composition layer (11, 13) satisfies the following requirement A: in the case where at least a part of metal ball(s) made... Agent:

20120319271 - Bump structure and process of manufacturing the same: A bump structure comprises a first polymer block, a second polymer block, a first groove, an under bump metallurgy layer and a connection metal layer, wherein the first polymer block and the second polymer block are individual blocks. The first polymer block and the second polymer block are located at... Agent:

20120319269 - Enhanced bump pitch scaling: An integrated circuit (IC) device is provided. In an embodiment the IC device includes an IC die configured to be bonded onto an IC routing member and a first plurality of pads that is located on a surface of the IC die, each pad being configured to be coupled to... Agent: Broadcom Corporation

20120319272 - Flip chip interconnect solder mask: A solder mask for flip chip interconnection has a common opening that spans a plurality of circuit elements. The solder mask allows confinement of the solder during the re-melt stage of interconnection, yet it is within common design rules for solder mask patterning. Also, a substrate for flip chip interconnection... Agent: Stats Chippac, Ltd.

20120319273 - Flip chip interconnect solder mask: A solder mask for flip chip interconnection has a common opening that spans a plurality of circuit elements. The solder mask allows confinement of the solder during the re-melt stage of interconnection, yet it is within common design rules for solder mask patterning. Also, a substrate for flip chip interconnection... Agent: Stats Chippac, Ltd.

20120319270 - Wafer level chip scale package with reduced stress on solder balls: A structure includes a metal pad over a semiconductor substrate, a passivation layer having a portion over the metal pad, and a first polyimide layer over the passivation layer, wherein the first polyimide layer has a first thickness and a first Young's modulus. A post-passivation interconnect (PPI) includes a first... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120319276 - Flip chip assembly process for ultra thin substrate and package on package assembly: In some embodiments, selective electroless plating for electronic substrates is presented. In this regard, a method is introduced including receiving a coreless substrate strip, attaching solder balls to a backside of the coreless substrate strip, and forming a backside stiffening mold amongst the solder balls. Other embodiments are also disclosed... Agent:

20120319274 - Method of manufacturing semiconductor device, and semiconductor device: A circuit substrate having a mounting surface on which a semiconductor chip is mounted and at least one connection pad formed on the mounting surface is connected to a support plate having at least one mounting portion with a diameter larger than a diameter of the connection pad, through a... Agent: Shinko Electric Industries Co., Ltd.

20120319275 - Semiconductor device with heat spreader: A BGA type semiconductor device includes: a substrate having wirings and electrodes; a semiconductor element disposed on the substrate, having a rectangular plan shape, and a plurality of electrodes disposed along each side of the semiconductor element; a plurality of wires connecting the electrodes on the semiconductor element with the... Agent: Fujitsu Semiconductor Limited

20120319277 - Thin film transistor panel and manufacturing method thereof: Disclosed is a thin film transistor panel, comprising a substrate, an insulation layer and transparent conducting material. The insulation layer comprises projections at the back side not facing the substrate. A space between two adjacent projections is 1 μm-10 μm; the transparent conducting material is formed on the top surface... Agent: Shenzhen China Star Optoelectronics Technology, Co., Ltd.

20120319278 - Gap filling method for dual damascene process: The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a patterned dielectric layer having a plurality of first openings. The method includes forming a conductive liner layer over the patterned dielectric layer, the conductive liner layer partially filling the first openings. The method includes... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120319280 - Semiconductor device and bonding material for semiconductor device: In a semiconductor device 100 according to the present invention in which a semiconductor member 120 is stacked on a substrate 110, the semiconductor member 120 and the substrate 110 are bonded together by means of a semiconductor device bonding material 130 of which main component is zinc. Further, a... Agent: Osaka University

20120319279 - Semiconductor device and method of producing the same: According to one embodiment, a semiconductor device includes a semiconductor substrate, wiring lines formed above the semiconductor substrate, and an air gap formed between the adjacent wiring lines. In the semiconductor device, top surfaces and side walls of the wiring lines are covered with the diffusion prevention film, and the... Agent: Kabushiki Kaisha Toshiba

20120319281 - Semiconductor device having groove-shaped via-hole: The semiconductor device has insulating films 40, 42 formed over a substrate 10; an interconnection 58 buried in at least a surface side of the insulating films 40, 42; insulating films 60, 62 formed on the insulating film 42 and including a hole-shaped via-hole 60 and a groove-shaped via-hole 66a... Agent: Fujitsu Semiconductor Limited

20120319282 - Reliable packaging and interconnect structures: Methods and apparatus for forming a semiconductor device are provided which may include any number of features. One feature is a method of forming an interconnect structure that results in the interconnect structure having a top surface and portions of the side walls of the interconnect structure covered in a... Agent: Tessera, Inc.

20120319283 - Semiconductor device having external electrodes exposed from encapsulation material: A semiconductor device includes a semiconductor element including an anode electrode and a cathode electrode, an encapsulating material which covers the semiconductor element, a first external electrode which is electrically connected to the cathode electrode and is at least partially exposed outside of the encapsulating material, a second external electrode... Agent: Sanken Electric Co., Ltd.

20120319290 - Electrical connection for multichip modules: A semiconductor chip is provided. The semiconductor chip includes a semiconductor substrate, a circuit on the substrate, an insulating layer formed on the circuit, and a plurality of electrically floating conductor lines formed on the insulating layer, at a major surface of the semiconductor chip.... Agent:

20120319284 - Integrated circuit packaging system with package on package support and method of manufacture thereof: A method of manufacture of an integrated packaging system includes: providing a substrate; mounting a die over the substrate; mounting an interposer having a slot over the die; covering a first encapsulant over the die and the interposer, a central region of the interposer exposed from the first encapsulant; and... Agent:

20120319286 - Integrated circuit packaging system with support structure and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing a substrate; forming a connection post on the substrate, the connection post having a post top and a post side; mounting an integrated circuit die on the substrate, the integrated circuit die having a top die surface; molding... Agent:

20120319285 - Integrated circuits including barrier polish stop layers and methods for the manufacture thereof: Embodiments of a method for fabricating integrated circuits are provided, as are embodiments of an integrated circuit. In one embodiment, the method includes the steps of depositing an interlayer dielectric (“ILD”) layer over a semiconductor device, depositing a barrier polish stop layer over the ILD layer, and patterning at least... Agent: Globalfoundries Inc.

20120319288 - Semiconductor package: A semiconductor package and a carrier for a semiconductor package are provided, the carrier having a top surface and a bottom surface separated by side walls. The carrier includes a seat for a component, and at least one terminal region for electrically connecting the component to the carrier when mounted... Agent: Biotronik Se & Co. Kg

20120319289 - Semiconductor package: A semiconductor package includes a semiconductor chip having plural electrode pads, and a wiring substrate having plural electrode pads to mount the semiconductor chip on the wiring substrate, wherein the plural electrode pads of the semiconductor chip include a first electrode pad, and a second electrode pad arranged on an... Agent: Shinko Electric Industries Co., Ltd.

20120319287 - Semiconductor structure and method for fabricating semiconductor layout: A method for fabricating a semiconductor layout includes providing a first layout having a plurality of line patterns and a second layout having a plurality of connection patterns, defining at least a first to-be-split pattern overlapping with the connection pattern among the line patterns, splitting the first to-be-split pattern at... Agent:

20120319297 - Chip package and method for forming the same: An embodiment of the invention provides a chip package which includes: a substrate having a plurality of sides and a plurality of corner regions, wherein each of the corner regions is located at an intersection of at least two of the sides of the substrate; a device region formed in... Agent:

20120319294 - Integrated circuit packaging system with laser hole and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing a substrate; molding a first encapsulation above the substrate; forming a via through the first encapsulation; mounting an integrated circuit above the substrate and between sides of the first encapsulation; and forming a second encapsulation covering the integrated... Agent:

20120319295 - Integrated circuit packaging system with pads and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: forming a circuit structure having a circuit active side and a cavity from the circuit active side; mounting an integrated circuit device in the cavity; forming a base encapsulation, having a base first side facing away from the circuit... Agent:

20120319298 - Method for fabricating a semiconductor and semiconductor package: A method for fabricating a semiconductor chip module and a semiconductor chip package is disclosed. One embodiment provides a first layer, a second layer, and a base layer. The first layer is disposed on the base layer, and the second layer is disposed on the first layer. A plurality of... Agent: Infineon Technologies Ag

20120319293 - Microelectronic device, stacked die package and computing system containing same, method of manufacturing a multi-channel communication pathway in same, and method of enabling electrical communication between components of a stacked-die package: A microelectronic device comprises a first surface (110, 710), a second surface (120, 720), and a passageway (130, 730) extending from the first surface to the second surface. The passageway contains a plurality of electrically conductive channels (131, 132, 231, 232) separated from each other by an electrically insulating material... Agent:

20120319296 - Semiconductor chip and semiconductor device: According to one embodiment, a semiconductor chip includes a semiconductor substrate, a via and an insulating layer. The semiconductor substrate has a first major surface and a second major surface on opposite side from the first major surface. The semiconductor substrate is provided with a circuit section including an element... Agent: Kabushiki Kaisha Toshiba

20120319299 - Semiconductor diode and method for producing a semiconductor diode: A semiconductor diode has a first semiconductor layer (102) of a first conductivity type and a second semiconductor layer of a second conductivity type having a doping. The second semiconductor layer has a vertical electrical via region (106) which is connected to the first semiconductor layer and in which the... Agent:

20120319291 - Semiconductor structures and methods of forming the same: A semiconductor structure includes a dielectric layer disposed over a substrate. A metallic line is disposed in the dielectric layer. A through-silicon-via (TSV) structure continuously extends through the dielectric layer and the substrate. A surface of the metallic line is substantially leveled with a surface of the TSV structure.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120319292 - Structure of a wafer level substrate for carrying light emitting devices: Structure and fabricating method of a wafer level substrate for carrying light emitting devices are provided in present invention. The wafer level silicon substrate structure includes a first substrate and a second substrate. A metal line is constructed on a surface of the first substrate according to a predetermined pattern.... Agent: Himax Technologies Limited

20120319300 - Integrated circuit packaging system with underfill and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing a substrate with a projection formed along a perimeter of a first surface of the substrate; mounting an integrated circuit over the first surface; forming a protruding interconnect over the first surface between the projection and the integrated... Agent:

20120319301 - Monolithic darlington with intermediate base contact: In one embodiment, a method includes forming a first pad for coupling to a first terminal of a first transistor of a monolithic darlington transistor configuration and forming a second pad for coupling to a first terminal of a second transistor of the monolithic darlington transistor configuration. The method then... Agent: Diodes Zetex Semiconductors Limited

20120319304 - Semiconductor device and manufacturing method: A semiconductor device and manufacturing method. One embodiment provides a semiconductor chip. An encapsulating material covers the semiconductor chip. A metal layer is over the semiconductor chip and the encapsulating material. At least one of a voltage generating unit and a display unit are rigidly attached to at least one... Agent: Infineon Technologies Ag

20120319302 - Semiconductor device and method of forming rf fem and rf transceiver in semiconductor package: A semiconductor device has a first semiconductor die containing a low pass filter and baluns. The first semiconductor die has a high resistivity substrate. A second semiconductor die including a bandpass filter is mounted to the first semiconductor die. The second semiconductor die has a gallium arsenide substrate. A third... Agent: Stats Chippac, Ltd.

20120319303 - Wafer level hermetic bond using metal alloy with keeper layer: Systems and methods for forming an encapsulated device include a hermetic seal which seals an insulating environment between two substrates, one of which supports the device. The hermetic seal is formed by an alloy of two metal layers, one deposited on a first substrate and the other deposited on the... Agent: Innovative Micro Technology

20120319305 - Process for producing a sheet of a circuit substrate: A process for producing a sheet of a circuit substrate which includes (i) providing a sheet for a circuit substrate which contains a layer of a polymer material of an energy ray hardening type for embedding circuit chips and is used for displays, the layer before being hardened by irradiating... Agent: Lintec Corporation

20120319306 - Epoxy resin composition for semiconductor encapsulation, and semiconductor device using the same: p

20120319307 - Identification of dies on a semiconductor wafer: A semiconductor wafer includes multiple dies and a die identification region adjacent to or on each die. The die identification region can include a wafer indicator and a pattern of die locations representing die locations on the wafer. A die identification marker is provided in each pattern of die locations... Agent:

20120313063 - Nonvolatile memory device having an electrode interface coupling region: Embodiments of the invention generally relate to a resistive switching nonvolatile memory device having an interface layer structure disposed between at least one of the electrodes and a variable resistance layer formed in the nonvolatile memory device, and a method of forming the same. Typically, resistive switching memory elements may... Agent: Intermolecular, Inc.

20120313066 - Nonvolatile memory devices, nonvolatile memory cells and methods of manufacturing nonvolatile memory devices: A nonvolatile memory cell includes first and second interlayer insulating films which are separated from each other and are stacked sequentially, a first electrode which penetrates the first interlayer insulating film and the second interlayer insulating film, a resistance change film which is formed along a side surface of the... Agent:

20120313068 - Nonvolatile semiconductor storage device and a manufacturing method thereof: Provided is a resistance change type nonvolatile semiconductor storage device including a diode capable of passing therethrough a sufficient current to a resistance changing operation even when the memory cell is miniaturized. A nonvolatile semiconductor storage device has first wires extending in X direction, second wires extending in Y direction,... Agent: Renesas Electronics Corporation

20120313067 - Semiconductor devices and methods of manufacturing the same: A memory device includes a lower interconnection in a semiconductor substrate, the lower interconnection being made of a material different from the semiconductor substrate, a selection element on the lower interconnection, and a memory element on the selection element.... Agent:

20120313064 - Semiconductor memory device and method for manufacturing the same: A semiconductor memory device includes a cell array layer having a memory cell. The memory cell has a current control device, a variable resistance device and a metal layer for silicide. A method for manufacturing the semiconductor memory device includes: forming the metal layer for silicide on a semiconductor layer... Agent: Kabushiki Kaisha Toshiba

20120313065 - Semiconductor memory device and method for manufacturing the same: A semiconductor memory device includes a cell array layer including a first wire, a memory cell stacked on the first wire, and a second wire formed on the memory cell. The memory cell includes a variable resistance element and a current control element The current control element includes a first... Agent: Kabushiki Kaisha Toshiba

20120313071 - Contact structure and method for variable impedance memory element: A memory element can include an opening formed within at least one insulating layer formed on an etch stop layer that exposes a first electrode portion and the etch stop layer at a bottom of the opening; a second electrode portion, formed on at least a side surface of the... Agent:

20120313070 - Controlled switching memristor: A controlled switching memristor includes a first electrode, a second electrode, and a switching layer positioned between the first electrode and the second electrode. The switching layer includes a material to switch between an ON state and an OFF state, in which at least one of the first electrode, the... Agent:

20120313072 - Three-dimensional semiconductor memory devices having double cross point array and methods of fabricating the same: Three-dimensional semiconductor memory devices and methods of fabricating the same. The device may include first, second and third conductive lines disposed at different vertical levels to define two intersections, and two memory cells disposed at the two intersections, respectively. The first and second conductive lines may extend parallel to each... Agent:

20120313069 - Work function tailoring for nonvolatile memory applications: Embodiments of the invention generally relate to a resistive switching nonvolatile memory device having an interface layer structure disposed between at least one of the electrodes and a variable resistance layer formed in the nonvolatile memory device, and a method of forming the same. Typically, resistive switching memory elements may... Agent: Intermolecular, Inc.

20120313073 - Nickel-based electrocatalytic photoelectrodes: A photoelectrode, methods of making and using, including systems for water-splitting are provided. The photoelectrode can be a semiconductive material having a photocatalyst such as nickel or nickel-molybdenum coated on the material.... Agent: California Institute Of Technology

20120313077 - High emission power and low efficiency droop semipolar blue light emitting diodes: High emission power and low efficiency droop semipolar blue light emitting diodes (LEDs).... Agent: The Regents Of The University Of California

20120313074 - Long wavelength light emitting devices with high quantum efficiencies: Various embodiments of light emitting devices with high quantum efficiencies are described herein. In one embodiment, a light emitting device includes a first contact, a second contact spaced apart from the first contact, and a first active region between the first and second contacts. The first active region is configured... Agent: Micron Technology, Inc.

20120313076 - Low droop light emitting diode structure on gallium nitride semipolar substrates: A light emitting diode structure of (Al,Ga,In)N thin films grown on a gallium nitride (GaN) semipolar substrate by metal organic chemical vapor deposition (MOCVD) that exhibits reduced droop. The device structure includes a quantum well (QW) active region of two or more periods, n-type superlattice layers (n-SLs) located below the... Agent: The Regents Of The University Of California

20120313075 - Optical component, products including same, and methods for making same: An optical component is disclosed that comprises a first substrate, an optical material comprising quantum confined semiconductor nanoparticles disposed over a predetermined region of a first surface of the first substrate, a layer comprising an adhesive material disposed over the optical material and any portion of the first surface of... Agent:

20120313078 - Semiconductor device and method for manufacturing semiconductor device: Disclosed is a semiconductor device (10) which comprises a glass substrate (12), a lower electrode layer (14), an n-type doped polycrystalline silicon semiconductor layer (16), a low-temperature insulating film (20) in which openings (22, 23) that serve as nuclei for growth of a nanowire (32) are formed, the nanowire (32)... Agent:

20120313079 - Graphene electronic devices having multi-layered gate insulating layer: A graphene electronic device includes a multi-layered gate insulating layer between a graphene channel layer and a gate electrode. The multi-layered gate insulating layer includes an organic insulating layer and an inorganic insulating layer on the organic insulating layer.... Agent: Samsung Electronics Co., Ltd.

20120313083 - 6,12-dinaphthylchrysene derivative and organic light-emitting device using the derivative: g

20120313091 - Compound for an organic photoelectric device, organic photoelectric device including the same, and display device including the organic photoelectric device: A compound for an organic photoelectric device, an organic photoelectric device including the same, and a display device including the organic photoelectric device, the compound being represented by the following Chemical Formula 1:... Agent:

20120313081 - Electronic device: An electronic device, such as a thin-film transistor, includes a semiconducting layer formed from a semiconductor composition. The semiconductor composition comprises a polymer binder and a small molecule semiconductor. The semiconducting layer has been deposited on an alignment layer that has been aligned in the direction between the source and... Agent: Xerox Corporation

20120313087 - Fluorine-fluorine associates: The present invention relates, inter alia, to compositions comprising, a compound which is able to emit and/or absorb light and a compound which is able either to absorb or emit light, where both compounds each include at least one fluorine radical. The present invention is furthermore directed to a process... Agent: Merck Patent Gmbh

20120313084 - Metal oxide semiconductor transistor: A metal oxide semiconductor transistor includes a gate, a metal oxide active layer, a gate insulating layer, a source, and a drain. The metal oxide active layer has a first surface and a second surface, and the first surface faces to the gate. The gate insulating layer is disposed between... Agent: E Ink Holdings Inc.

20120313085 - Novel organic compound and organic light-emitting device: An organic compound represented by the following general formula (1) wherein R1 to R18 independently denote a hydrogen atom, a halogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted amino group, a substituted or unsubstituted aryl group, or a substituted or... Agent: Canon Kabushiki Kaisha

20120313082 - Optoelectronic device and stacking structure: Disclosed is an optoelectronic device that includes a light source, an emission layer disposed on the light source including a light emitting particle dispersed in a matrix polymer, and a polymer film disposed on the emission layer, the polymer film including a polymerized polymer of a first monomer including at... Agent: Samsung Electronics Co., Ltd.

20120313089 - Organic electroluminescence device: s

20120313086 - Organic semiconductor material, organic semiconductor composition, organic thin film, field-effect transistor, and manufacturing method therefor:

20120313090 - Phenyl-substituted 1,3,5-triazine compound, process for producing the same, and organic electroluminescent device containing the same as component: wherein Ar1 and Ar2 independently represent substituted or unsubstituted phenyl, naphthyl or biphenylyl group; R1, R2 and R3 independently represent hydrogen atom or methyl group; X1 and X2 independently represent substituted or unsubstituted phenylene, naphthylene or pyridylene group; p and q independently represent an integer of 0 to 2; and... Agent: Tosoh Corporation

20120313088 - Photoelectric conversion device, imaging device and production methods thereof: A photoelectric conversion device is provided and includes: a first electrode, a second electrode, and a photoelectric conversion layer between the first and second electrodes, the photoelectric conversion layer containing a mixture of an organic photoelectric conversion dye, a fullerene or a fullerene derivative, and a fullerene polymer; various embodiments... Agent: Fujifilm Corporation

20120313080 - Semiconductor photocapacitor device: A photocapacitor device is provided for responding to a photon having at least a specified energy. The photocapacitive device includes a first portion composed of a photocapacitive material; a second portion composed of a non-photocapacitive material; and a depletion region disposed between the first and second portions. The ph otocapacitive... Agent: United States Government, As Represented By The Secretary Of The Navy

20120313092 - Metal oxide tft with improved source/drain contacts: A method of forming ohmic source/drain contacts in a metal oxide semiconductor thin film transistor includes providing a gate, a gate dielectric, a high carrier concentration metal oxide semiconductor active layer with a band gap and spaced apart source/drain metal contacts in a thin film transistor configuration. The spaced apart... Agent:

20120313093 - Oxide thin film transistor and method of fabricating the same: An oxide thin film transistor (TFT) and a fabrication method thereof are provided. First and second data wirings are made of different metal materials, and an active layer is formed on the first data wiring to implement a short channel, thus enhancing performance of the TFT. The first data wiring... Agent: Lg Display Co., Ltd.

20120313094 - Semiconductor device and manufacturing method thereof: A semiconductor device which uses a semiconductor substrate having a TEG pattern to reduce defects induced by dicing. The semiconductor device includes a semiconductor substrate which is to be or has been divided into individual semiconductor chips by dicing; an interlayer insulating layer formed over the semiconductor substrate; a seal... Agent: Renesas Electronics Corporation

20120313095 - Electrostatic discharge protection circuit employing polysilicon diode: An electrostatic discharge (ESD) protection circuit includes a polysilicon diode, a switch element, and a load element. The poly silicon diode has a first terminal and a second terminal. The switch element has a control terminal coupled to the first terminal of the polysilicon diode, a first terminal coupled to... Agent:

20120313097 - Flash memory device having a graded composition, high dielectric constant gate insulator: A graded composition, high dielectric constant gate insulator is formed between a substrate and floating gate in a flash memory cell transistor. The gate insulator comprises amorphous germanium or a graded composition of germanium carbide and silicon carbide. If the composition of the gate insulator is closer to silicon carbide... Agent: Micron Technology, Inc.

20120313096 - Oxide semiconductor composition and preparation method thereof, method of forming oxide semiconductor thin film, method of fabricating electronic device and electronic device fabricated thereby: Provided are an oxide semiconductor composition, a preparation method thereof, an oxide semiconductor thin film using the composition, and a method of forming an electronic device. The oxide semiconductor composition includes a photosensitive material and an oxide semiconductor precursor.... Agent: Industry-academics Cooperation Foundation, Yonsei University

20120313102 - Array substrate and liquid crystal display device having the same: An array substrate and a liquid crystal display (LCD) device having the array substrate are provided. The array substrate may include a pixel electrode, a coupling electrode and an opposite electrode. The pixel electrode may include a first sub-electrode having first electrode bars receiving a first voltage and a second... Agent:

20120313099 - Organic light emitting display device and method of manufacturing the same: The organic light emitting display device includes a substrate, a thin film transistor (TFT) formed on the substrate, a first insulating layer covering the TFT, a first electrode formed on the first insulating layer and electrically connected to the TFT, a second insulating layer formed on the first insulating layer... Agent: Samsung Mobile Display Co., Ltd.

20120313098 - Organic light-emitting display apparatus: An organic light-emitting display apparatus may include a substrate; a thin-film transistor (TFT) disposed on the substrate, and having an active layer, a gate electrode, a source electrode and a drain electrode; a signal line formed on the same layer as the source electrode and the drain electrode; a first... Agent: Samsung Mobile Display Co., Ltd.

20120313100 - Pixel structure: A pixel structure including a semiconductor layer having at least one source region and at least one drain region; a first insulating layer covering the semiconductor layer; a first conductive layer on the first insulating layer and including at least one gate; a second insulating layer covering the first conductive... Agent: Au Optronics Corporation

20120313101 - Thin film transistor array substrate and method for manufacturing the same: The present disclosure discloses a method for manufacturing a TFT array substrate, comprising: depositing a gate metal layer, a gate insulating layer, a semiconductor layer and a source-drain electrode layer in this order on a base substrate, performing a first photolithograph process to form a common electrode line, a gate... Agent: Boe Technology Group Co., Ltd.

20120313103 - Radioactive-ray imaging apparatus, radioactive-ray imaging display system and transistor: Disclosed herein is a transistor including: a semiconductor layer; a first gate insulation film and a first interlayer insulation film which are provided on a specific surface side of the semiconductor layer; a first gate electrode provided at a location between the first gate insulation film and the first interlayer... Agent: Sony Corporation

20120313104 - Analog memory cell circuit for the ltps tft-lcd: The present invention provides an analog memory cell circuit for the LTPS TFT-LCD. The circuit comprises the first transistor, second transistor, the third transistor, the fourth transistor, the fifth transistor, the sixth transistor, the seventh transistor, and the capacitor. It comprises a plurality of operation period, wherein the transistors are... Agent: National Chiao Tung University

20120313106 - Enhancement mode group iii-v high electron mobility transistor (hemt) and method for fabrication: According to one disclosed embodiment, an enhancement mode high electron mobility transistor (HEMT) comprises a heterojunction including a group III-V barrier layer situated over a group III-V semiconductor body, and a gate structure formed over the group III-V barrier layer and including a P type group III-V gate layer. The... Agent: International Rectifier Corporation

20120313110 - Light emitting device: Disclosed are a light emitting device. A light emitting diode comprises a light emitting device comprises a plurality of N-type semiconductor layers including a first N-type semiconductor layer and a second N-type semiconductor layer on the first N-type semiconductor layer, an active layer on the second N-type semiconductor layer, and... Agent:

20120313109 - Nitride semiconductor light emitting device and fabrication method thereof: Provided is a nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed above the first nitride semiconductor layer; and a delta doped second nitride semiconductor layer formed above the active layer. According to the present invention, the optical power of the nitride semiconductor light... Agent: Lg Innotek Co., Ltd.

20120313107 - Semiconductor device: A semiconductor device includes a main body made of a GaN-based semiconductor material, and at least one electrode structure. The electrode structure includes an ohmic contact layer that is formed on the main body, a buffer layer that is formed on the ohmic contact layer opposite to the main body,... Agent: National Chiao Tung University

20120313108 - Semiconductor diode: To provide a semiconductor diode with a part of a semiconductor lamination portion having a mesa structure portion, which is the part where a pn-junction is formed by lamination of an n-type semiconductor layer and a p-type semiconductor layer on a substrate, comprising: a protective insulating film formed by coating... Agent: Hitachi Cable, Ltd.

20120313105 - Unipolar diode with low turn-on voltage: A unipolar diode with low turn-on voltage includes a subcathode semiconductor layer, a low-doped, wide bandgap cathode semiconductor layer, and a high-doped, narrow bandgap anode semiconductor layer. A junction between the cathode layer and the anode layer creates an electron barrier in the conduction band, with the barrier configured to... Agent:

20120313111 - Die alignment with crystallographic axes in gan-on-sic and other non-cubic material substrates: A semiconductor chip comprises: a semiconductor structure having a single crystal substrate having a non-cubic crystallographic structure and epitaxial layers disposed on the substrate wherein adjacent sides of the semiconductor structure are at oblique angles. A method for separating a plurality of integrated circuit chips. The method includes: providing a... Agent: Raytheon Company

20120313112 - Semiconductor device: A MOSFET includes a silicon carbide substrate, a drift layer made of silicon carbide and including a main surface having an off angle of 50° or more and 65° or less with respect to a {0001} plane, and a gate oxide film formed on and in contact with the main... Agent: Sumitomo Electric Industries, Ltd.

20120313113 - Photovoltaic organic light emitting diodes device and manufacturing method thereof: A photovoltaic organic light emitting diodes (PV-OLED) device and manufacturing method thereof are introduced. The PV-OLED device includes a substrate, a solar cell module, and a plurality of organic light emitting diodes. The solar cell module is disposed on a surface of the substrate. The organic light emitting diodes are... Agent: Industrial Technology Research Institute

20120313118 - Active-matrix organic light-emitting diode display device with short protection: An active-matrix OLED display device, which reduces the adverse effects of short circuits across OLED devices in a densely packed array by having a thin-film resistive layer integrated in series with the OLED device. The OLED device includes a substrate, and first and second pixels situated proximate each other on... Agent: Emagin Corporation

20120313121 - Display device and method thereof: A display device includes a pixel electrode disposed on a first substrate, and including a first portion, a second portion and a connection portion disposed between the first portion and the second portion, a capacitor line disposed on the first substrate and between the first substrate and the connection portion,... Agent: Samsung Electronics Co., Ltd.

20120313115 - Light emitter device packages, modules and methods: Light emitter device packages, modules and methods are disclosed having a body and a cavity that can be formed from a single substrate of material. The material can be thermally conductive and/or metallic. A light emitter device package can have at least one isolating layer creating at least a first... Agent:

20120313117 - Light-emitting diode package: Disclosed is a light-emitting diode package according to an embodiment, including; a body having a cavity formed therein, a lead frame placed in the cavity; and a light emitting diode electrically connected to the lead frame while having a slope angle relative to the bottom surface of the cavity, wherein... Agent:

20120313116 - Liquid crystal display and chip on film thereof: A chip on film (COF) is disclosed in the present disclosure, which comprises an adhesive base layer, a driving integrated circuit (IC), an adhesive layer and a copper layer. The driving IC is embedded on a surface of the adhesive base layer; the adhesive layer is located under the adhesive... Agent: Shenzhen China Star Optoelectronics Technology Co. Ltd.

20120313120 - Method for depositing a phosphor layer on leds, and apparatus made thereby: A method for depositing a phosphor layer on a light-emitting diode (“LED”) chip includes coating at least a light-emitting side of the LED chip with a phosphor-adhesive material, and applying phosphor particles to an exposed surface of the material such that the phosphor layer forms of phosphor particles that adhere... Agent: Albeo Technologies, Inc.

20120313114 - Method of manufacturing thin film transistor, thin film transistor manufactured by using the method, method of manufacturing organic light-emitting display apparatus, and organic light-emitting display apparatus manufactured by using the method: A method of manufacturing a thin film transistor (TFT), a TFT manufactured by the method, a method of manufacturing an organic light-emitting display apparatus that includes the TFT, a display including the TFT. By including a buffer layer below and an insulating layer above a silicon layer for the TFT,... Agent: Samsung Mobile Display Co., Ltd.

20120313122 - Substrate for mounting light-emitting elements, and light-emitting device: A substrate for mounting light-emitting elements to mount a plurality of double wire type light-emitting elements so as to be connected in parallel, comprising a substrate main body made of a sintered product of an inorganic material powder and having a mounting surface for light-emitting elements; wiring conductors provided so... Agent: Asahi Glass Company, Limited

20120313119 - Three dimensional light-emitting-diode (led) stack and method of manufacturing the same: A three dimensional (3-D) light-emitting-diode (LED) stack and method of manufacturing the same, comprising: a substrate; at least a first LED, stacked on said substrate; and at least a second LED, stacked on said first LED, such that energy gap of said first LED is smaller than energy gap of... Agent: Chang Gung University

20120313123 - Display device having a spacer: A display device includes a first substrate having a plurality of pixel regions separated by a non-pixel region; a second substrate facing the first substrate; and a spacer disposed between the first substrate and the second substrate to maintain a gap between the first substrate and the second substrate. The... Agent: Samsung Mobile Display Co., Ltd.

20120313124 - Galium-substituted yttrium aluminum garnet phosphor and light emitting devices including the same: Provided herein are phosphor compositions that include a YAG phosphor that is substituted with gallium, such as YaCebAlcGadOz, wherein a, b, c, d and z are positive numbers. Also provided are solid state light emitting devices that include a YAG phosphor that is substituted with gallium.... Agent:

20120313131 - Led leadframe or led substrate, semiconductor device, and method for manufacturing led leadframe or led substrate: An LED leadframe or LED substrate includes a main body portion having a mounting surface for mounting an LED element thereover. A reflection metal layer serving as a reflection layer for reflecting light from the LED element is disposed over the mounting surface of the main body portion. The reflection... Agent: Dai Nippon Printing Co., Ltd.

20120313126 - Led package: An LED package comprises an encapsulation layer, an LED die and two electrodes. The LED die is capable of emitting a first light beam with a first wavelength, and, respectively, electrically connecting to the two electrodes. The encapsulation layer covers the LED die, and comprises a luminescent conversion element and... Agent: Advanced Optoelectronic Technology, Inc.

20120313125 - Light emitting devices with efficient wavelength conversion and associated methods: Various embodiments of light emitting devices with efficient wavelength conversion and associated methods of manufacturing are described herein. In one embodiment, a light emitting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second... Agent: Micron Technology, Inc.

20120313128 - Lighting device and method for manufacturing the same: A lighting device is formed using a light-emitting element by a more simplified method. The lighting device includes a light-emitting element including a light-emitting layer between a first electrode and a second electrode, a substrate provided with the light-emitting element and an uneven region around the periphery of the light-emitting... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120313127 - Manufacturing method of led base plate, led base plate and white light led structure: An LED base plate enabling the LED to emit high luminance white light. The base plate has a reflective surface, and protrusions disposed on the reflective surface have top portions formed with curved surfaces. The protrusions have bottom widths of 2 to 4 micrometers and heights of 1.2 to 1.8... Agent:

20120313129 - Organic electroluminescent element, and method for manufacturing organic electroluminescent element: An object of the present invention is to realize an OLED capable of attaining high luminescence luminance and easy to manufacture. An organic electroluminescence device (1) of the present invention includes a luminescent layer (7) between an anode (3) and a cathode (9). The luminescent layer (7) contains an organic... Agent: Osaka University

20120313132 - Pixel structure: A pixel structure including an active device, a capacitor electrode line, a light shielding layer, a color filter pattern and a pixel electrode is provided. The active device and the capacitor electrode line are disposed on a substrate. The light shielding layer is disposed on the substrate, and the dielectric... Agent: Au Optronics Corporation

20120313130 - Solid state light emitter with pumped nanophosphors for producing high cri white light: A solid state white light emitting device includes a semiconductor chip producing near ultraviolet (UV) energy. The device may include a reflector forming and optical integrating cavity. Phosphors, such as doped semiconductor nanophosphors, within the chip packaging of the semiconductor device itself, are excitable by the near UV energy. However... Agent: AblIPHolding LLC

20120313134 - Glass substrate coated with a high-index layer under an electrode coating, and organic light-emitting device comprising such a substrate: A glass substrate including a first face and a second face opposing the first face, the substrate including, above the second face, an electrode layer which includes at least one electrically conducting layer, wherein the substrate includes, between the second face and the electrode layer, at least one layer of... Agent: Saint-gobain Glass France

20120313133 - Heterostructure containing ic and led and method for fabricating the same: A heterostructure contains an IC and an LED. An IC and an LED are initially provided. The IC has at least one first electric-conduction block and at least one first connection block. The IC electrically connects with the first electric-conduction block. The first face of the LED has at least... Agent: National Chiao Tung University

20120313135 - Mounting board and structure of the same: A mounting board including a pair of patterned electrodes, a lower surface and an upper surface opposed thereto on which a substrate of an electronic component is to be mounted, a pass-through hole penetrating through the upper surface and the lower surface, and a peripheral side surface that defines the... Agent: Citizen Holdings Co., Ltd.

20120313137 - Organic light emitting device and method for manufacturing the same: An organic light emitting device and a method for manufacturing that same are discussed, which can reduce thickness and weight of the device as well as the manufacturing cost. The organic light emitting device includes according to an embodiment an organic light emitting diode (OLED) formed on a glass substrate;... Agent:

20120313136 - Organic light emitting diode display and method for manufacturing the same: In one aspect, an organic light emitting diode (OLED) display that includes: a substrate; an organic light emitting element on the substrate; a thin film encapsulation layer on the substrate and covering the organic light emitting element; a polymer carpet layer directly on the thin film encapsulation layer; and a... Agent: Samsung Mobile Display Co., Ltd.

20120313138 - Optoelectronic semiconductor chip and use of an intermediate layer based on algan: An optoelectronic semiconductor chip includes an epitaxially grown semiconductor layer sequence based on GaN, InGaN, AlGaN and/or InAlGaN, a p-doped layer sequence, an n-doped layer sequence, an active zone that generates an electromagnetic radiation and is situated between the p-doped layer sequence and the n-doped layer sequence, and at least... Agent: Osram Opto Semiconductors Gmbh

20120313139 - Igbt and diode: In an IGBT, defects generated by ion implantation for introduction of the P-type collector region or N-type buffer region into the N−-type drift region near the N-type buffer region remain to improve the switching speed, however the leak current increases by bringing a depletion layer into contact with the crystal... Agent: Renesas Electronics Corporation

20120313140 - Method of fabricating a deep trench insulated gate bipolar transistor: In one embodiment, a method comprises forming an epitaxial layer over a substrate of an opposite conductivity type, the epitaxial layer being separated by a buffer layer having a doping concentration that is substantially constant in a vertical direction down to the buffer layer. A pair of spaced-apart trenches is... Agent: Power Integrations, Inc.

20120313141 - Fast switching hybrid igbt device with trenched contacts: A hybrid IGBT device having a VIGBT and LDMOS structures comprises at least a drain trenched contact filled with a conductive plug penetrating through an epitaxial layer, and extending into a substrate; a vertical drain region surrounding at least sidewalls of the drain trenched contact, extending from top surface of... Agent: Force Mos Technology Co. Ltd.

20120313142 - Imaging device, method for fabricating imaging device, and imaging apparatus: According to an aspect of the invention, an imaging device includes a plurality of photoelectric conversion elements and a read-out portion. The photoelectric conversion elements are arranged above a substrate. The read-out portion reads out signal corresponding to charges which are generated from each of the photoelectric conversion elements. Each... Agent: Fujifilm Corporation

20120313143 - Highly scaled etsoi floating body memory and memory circuit: A floating body memory cell, memory circuit, and method for fabricating floating body memory cells. The floating body memory cell includes a bi-layer heterojunction having a first semiconductor coupled to a second semiconductor. The first semiconductor and the second semiconductor have different energy band gaps. The floating body memory cell... Agent: International Business Machines Corporation

20120313144 - Recessed gate field effect transistor: A semiconductor device having a gate positioned in a recess between the source region and a drain region that are adjacent either side of the gate electrode. A channel region is below a majority of the source region as well as a majority of the drain region and the entire... Agent: Stmicroelectronics, Inc.

20120313145 - Semiconductor device with spacer layer between carrier traveling layer and carrier supplying layer: A nitride semiconductor device is disclosed. The device includes a stack of semiconductor layers including the channel layer, the spacer layer, and the doped layer. The spacer layer is made of AlN while the doped layer is InAlN. A feature of the embodiment is that the spacer layer has a... Agent: Sumitomo Electric Industries, Ltd.

20120313146 - Transistor and method of forming the transistor so as to have reduced base resistance: Disclosed is a transistor structure, having a completely silicided extrinsic base for reduced base resistance Rb. Specifically, a metal silicide layer covers the extrinsic base, including the portion of the extrinsic base that extends below the upper portion of a T-shaped emitter. One exemplary technique for ensuring that the metal... Agent: International Business Machines Corporation

20120313147 - Semiconductor device and method of forming a power mosfet with interconnect structure silicide layer and low profile bump: A semiconductor device has a substrate with a source region and a drain region formed on the substrate. A silicide layer is disposed over the source region and drain region. A first interconnect layer is formed over the silicide layer and includes a first runner connected to the source region... Agent: Great Wall Semiconductor Corporation

20120313154 - Mos transistor having combined-source structure with low power consumption and method for fabricating the same: The present invention discloses a MOS transistor having a combined-source structure with low power consumption, which relates to a field of field effect transistor logic devices and circuits in CMOS ultra-large-scaled integrated circuits. The MOS transistor includes a control gate electrode layer, a gate dielectric layer, a semiconductor substrate, a... Agent: Peking University

20120313148 - Self-aligned trench contact and local interconnect with replacement gate process: A semiconductor device fabrication process includes forming insulating mandrels over one or more replacement metal gates on a semiconductor substrate. The mandrels include a first insulating material. Each mandrel has approximately the same width as its underlying gate with each mandrel being at least as wide as its underlying gate.... Agent:

20120313152 - Semiconductor device and method of manufacturing the same: A transistor which includes an oxide semiconductor and is capable of high-speed operation and a method of manufacturing the transistor. In addition, a highly reliable semiconductor device including the transistor and a method of manufacturing the semiconductor device. The semiconductor device includes an oxide semiconductor layer including a channel formation... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120313151 - Semiconductor device including contact structure, method of fabricating the same, and electronic system including the same: A semiconductor device includes a gate structure on a semiconductor substrate, an impurity region at a side of the gate structure and the impurity region is within the semiconductor substrate, an interlayer insulating layer covering the gate structure and the impurity region, a contact structure extending through the interlayer insulating... Agent:

20120313149 - Semiconductor structure and method for manufacturing the same: The present invention provides a semiconductor structure and a method for manufacturing the same. The method comprises the following steps: providing a semiconductor substrate, forming sequentially a gate dielectric layer, a metal gate, a CMP stop layer, and a poly silicon layer on the semiconductor substrate; etching the gate dielectric... Agent: Institute, Of Microelectronics, Chinese Academy Of Sciences

20120313153 - System and method of plating conductive gate contacts on metal gates for self-aligned contact interconnections: According to one embodiment of the invention, the gate contact is formed by a selective deposition on the gate electrode. One acceptable technique for the selective deposition is by plating. Plating is one process by which a metal structure, such as a gate contact, may be formed directly on the... Agent: Stmicroelectronics, Inc.

20120313150 - Thin film transistor and method of manufacturing the same, and electronic apparatus: A thin film transistor includes: an organic semiconductor layer which is formed from a metal-containing material containing at least one of a metallic element and a semi-metallic element capable of reacting with an etching gas; a source electrode and a drain electrode spaced apart from each other; and an organic... Agent: Sony Corporation

20120313155 - Photo detector and methods of manufacturing and operating same: A photo detector comprising a first doped impurity region (adapted to receive a first voltage) disposed in or on a substrate; a body region, juxtaposed the first doped impurity region; a gate (adapted to receive a second voltage) spaced from a first portion of the body region; a light absorbing... Agent:

20120313156 - Semiconductor device and method of manufacturing the same: A method of forming a semiconductor device includes the following processes. A pillar is formed which stands on a semiconductor substrate. A first insulating film is formed which covers a side surface of the pillar. An upper portion of the first insulating film is removed to expose a side surface... Agent: Elpida Memory, Inc.

20120313157 - Dram cell having buried bit line and manufacturing method thereof: A dram cell having buried bit line includes a substrate having fin structures thereon, a plurality of deep trenches in the substrate, a buried stripe, a plurality of word lines formed on the substrate and a plurality of capacitors formed on the fin structures. Each of the deep trenches is... Agent: Inotera Memories, Inc.

20120313158 - Semiconductor structure and method for manufacturing the same: The present invention provides a semiconductor structure and a method for manufacturing the same. The method comprises: providing a substrate, forming sequentially a first high-k dielectric layer, an adjusting layer, a second high-k dielectric layer and a metal gate on the substrate, etching the first high-k dielectric layer, the adjusting... Agent: Institute Of Microelectronics, Chinese Academy Of Sciences

20120313159 - Non-volatile memory devices including gates having reduced widths and protection spacers and methods of manufacturing the same: Non-volatile memory devices and methods of manufacturing the same are disclosed. In a non-volatile memory device, widths of a metal gate and an upper portion of a base gate in a gate electrode are less than the width of a hard mask pattern disposed on the metal gate. First and... Agent: Samsung Electronics Co., Ltd.

20120313160 - Semiconductor device and a method of manufacturing the same: Provided is a semiconductor device having, over a semiconductor substrate, a control gate electrode and a memory gate electrode which are adjacent to each other and constitute a nonvolatile memory. The height of the memory gate electrode is lower than the height of the control gate electrode. A metal silicide... Agent: Renesas Electronics Corporation

20120313161 - Semiconductor device with enhanced mobility and method: In one embodiment, a vertical insulated-gate field effect transistor includes a feature embedded within a control electrode. The feature is placed within the control electrode to induce stress within predetermined regions of the transistor.... Agent:

20120313163 - Semiconductor device, and method of manufacturing the same: The generation of a variation in properties of vertical transistors is restrained. A vertical MOS transistor is formed in a semiconductor substrate. A first interlayer dielectric film and a first source wiring are formed over the front surface of the substrate. The first source wiring is formed over the first... Agent: Renesas Electronics Corporation

20120313162 - Semiconductor device, method for manufacturing metal film, and method for manufacturing semiconductor device: According to one embodiment, a semiconductor device includes: a semiconductor substrate; an arsenic diffusion layer formed in the semiconductor substrate and containing arsenic; and a metal film formed on the arsenic diffusion layer. The metal film includes at least one metal selected from the group consisting of tungsten, titanium, ruthenium,... Agent: Kabushiki Kaisha Toshiba

20120313164 - Semiconductor devices: An object of the present application is to reduce the gate capacitance without lowering the withstand voltage of a semiconductor device and prevent generation of a leak current between main electrodes even when an oxide film is formed poorly. A semiconductor device of the present application comprises a gate electrode... Agent: Toyota Jidosha Kabushiki Kaisha

20120313165 - Semiconductor device and manufacturing method thereof: A semiconductor device and its manufacturing method are disclosed. The semiconductor device comprises a gate, and source and drain regions on opposite sides of the gate, wherein a portion of a gate dielectric layer located above the channel region is thinner than a portion of the gate dielectric layer located... Agent: Semiconductor Manufacturing International (beijing) Corporation

20120313166 - Semiconductor device having a modified shallow trench isolation (sti) region and a modified well region: An apparatus is disclosed to increase a breakdown voltage of a semiconductor device. The semiconductor device can include a modified breakdown shallow trench isolation (STI) region to effectively reduce its drain to source resistance when compared to a conventional semiconductor device. This reduction in the drain to source resistance increases... Agent: Broadcom Corporation

20120313167 - Semiconductor device having gradient doping profile: The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a gate over a substrate. The method includes performing a first implantation process to form a first doped region in the substrate, the first doped region being adjacent to the gate. The method includes performing... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120313169 - Fin-fet device and method and integrated circuits using such: FIN-FET ICs with adjustable FIN-FET channel widths are formed from a semiconductor layer (42). Fins (36) may be etched from the layer (42) and then some (46) locally shortened or the layer (42) may be locally thinned and then fins (46) of different fin heights etched therefrom. Either way provides... Agent: Globalfoundries Inc.

20120313170 - Fin-last replacement metal gate finfet: FinFET devices and methods for the fabrication thereof are provided. In one aspect, a method for fabricating a FET device includes the following steps. A wafer is provided having an active layer on an insulator. A plurality of fin hardmasks are patterned on the active layer. A dummy gate is... Agent: International Business Machines Corporation

20120313168 - Formation of embedded stressor through ion implantation: An extremely-thin silicon-on-insulator transistor includes a buried oxide layer above a substrate. The buried oxide layer, for example, has a thickness that is less than 50 nm. A silicon layer is above the buried oxide layer. A gate stack is on the silicon layer includes at least a gate dielectric... Agent: International Business Machines Corporation

20120313173 - Method for isolating rf functional blocks on silicon-on-insulator (soi) substrates: Buried implants are used to reduce RF (radio-frequency) coupling in a SOI (Silicon-on-insulator) circuit. These buried implants are located above and/or below the BOX (buried oxide) layer of the SOI circuit. These buried implants may completely enclose the PWELL (P-type well) of an NFET (N-type Field Effect Transistor).... Agent: Rf Micro Devices, Inc.

20120313174 - Method of making a mosfet having self-aligned silicided schottky body tie including intentional pull-down of an sti exposing sidewalls of a diffusion region: A self-aligned transistor device includes: a source region and drain regions disposed on an oxide layer; a channel with a diffusion region formed between the drain and source regions; a silicide layer over a top surface of the source and drain regions, extending into the diffusion region; and a recess... Agent: International Business Machines Corporation

20120313171 - Semiconductor device and manufacturing method thereof: A Si-on-half-insulator device and its manufacturing method are disclosed in this invention. In one embodiment, a horizontal insulating layer located below at least one of the source and drain regions is realized to reduce junction capacitance. In another embodiment, a horizontal insulating layer located below at least one of the... Agent: Semiconductor Manufacturing International (beijing) Corporation

20120313172 - Semiconductor device, semiconductor wafer, and methods of manufacturing the same: This invention is to provide a semiconductor device having a reduced variation in the transistor characteristics. The semiconductor device has a SOI substrate, a first element isolation insulating layer, first and second conductivity type transistors, and first and second back gate contacts. The SOI substrate has a semiconductor substrate having... Agent: Renesas Electronics Corporation

20120313175 - Semiconductor device: The present invention provides a semiconductor device including a substrate, a deep well, a high-voltage well, and a doped region. The substrate and the high-voltage well have a first conductive type, and the deep well and the doped region have a second conductive type different from the first conductive type.... Agent:

20120313176 - Buried sublevel metallizations for improved transistor density: Generally, the subject matter disclosed herein relates to modern sophisticated semiconductor devices and methods for forming the same, wherein electrical interconnects between circuit elements based on a buried sublevel metallization may provide improved transistor density. One illustrative method disclosed herein includes forming a contact dielectric layer above first and second... Agent: Globalfoundries Inc.

20120313179 - Modular die and mask for semiconductor processing: Modular dies and modular masks for the manufacture of semiconductor devices are described. The modular mask can be used repeatedly to make multiple, substantially-similar modular dies. The modular die contains a substrate with an integrated circuit and a conductive layer containing a source metal and a gate metal connected respectively... Agent:

20120313177 - Multiple finger structure: A multiple finger structure comprises a plurality of active regions placed between a pair of dummy POLY lines. The active regions comprise a plurality of multiple fingered NMOS transistors, which are part of a sense amplifier of an SRAM memory circuit. The drain and source of each multiple fingered NMOS... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120313180 - Non-volatile anti-fuse with consistent rupture: In an embodiment of the invention, a non-volatile anti-fuse memory cell is disclosed. The memory cell consists of a programmable n-channel diode-connectable transistor. The poly-silicon gate of the transistor has two portions. One portion is doped more highly than a second portion. The transistor also has a source with two... Agent: Texas Instruments Incorporated

20120313178 - Semiconductor device having metal gate and manufacturing method thereof: A method of manufacturing a semiconductor device having metal gate includes providing a substrate having a first transistor and a second transistor formed thereon, the first transistor having a first gate trench formed therein, forming a first work function metal layer in the first gate trench, forming a sacrificial masking... Agent:

20120313182 - Electronic component comprising a number of mosfet transistors and manufacturing method: An electronic component including a number of insulated-gate field effect transistors, said transistors belonging to at least two distinct subsets by virtue of their threshold voltage, wherein each transistor includes a gate that has two electrodes, namely a first electrode embedded inside the substrate where the channel of the transistor... Agent: Stmicroelectronics (crolles 2) Sas

20120313181 - Stress film forming method and stress film structure: A stress film forming method is used in a fabrication process of a semiconductor device. Firstly, a substrate is provided, wherein a first-polarity-channel MOSFET and a second-polarity-channel MOSFET are formed on the substrate. Then, at least one deposition-curing cycle process is performed to form a cured stress film over the... Agent: United Microelectronics Corp.

20120313183 - Transistor of semiconductor device and method of fabricating the same: A method of fabricating a transistor of a semiconductor device comprises: forming a gate in a NMOS region and a PMOS region of a semiconductor substrate; forming a gate spacer on a sidewall of the gate; performing an ion implantation process on the NMOS region to form a junction region... Agent: Hynix Semiconductor Inc.

20120313184 - Switching circuit: A switching circuit (80) includes: a plurality of insulated gate transistors (30-33) connected in parallel between a high voltage line (L1) and a low voltage line (L2); gate resistors (50-53) each provided for one of the plurality of insulated gate transistors (30-33) and each including a first terminal connected to... Agent: Kabushiki Kaisha Toyota Jidoshokki

20120313185 - Semiconductor integrated circuit including memory cells: A semiconductor integrated circuit includes a plurality of memory cells arranged in a cell-placement row extending in a first direction, a first N well and a first P well arranged in a second direction perpendicular to the first direction in each area of the memory cells, and a second N... Agent: Fujitsu Limited

20120313186 - Polysilicon gate with nitrogen doped high-k dielectric and silicon dioxide: A polysilicon gate structure includes a substrate, a silicon dioxide layer disposed over the substrate, a nitrogen-doped high-k dielectric layer disposed over the silicon dioxide layer, and a polysilicon gate disposed over the nitrogen-doped high-k dielectric layer.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120313187 - Method of removing gate cap materials while protecting active area: Disclosed herein is a method of forming a semiconductor device. In one example, the method includes forming a gate electrode structure above a semiconducting substrate, wherein the gate electrode structure includes a gate insulation layer, a gate electrode, a first sidewall spacer positioned proximate the gate electrode, and a gate... Agent: Globalfoundries Inc.

20120313188 - Semiconductor device: A semiconductor device includes, on a semiconductor substrate, a gate insulating film, a pMIS metal material or an nMIS metal material, a gate electrode material, and a gate sidewall metal layer.... Agent: Panasonic Corporation

20120313189 - Method of preventing stiction of mems devices: A method and apparatus are disclosed for reducing stiction in MEMS devices. The method comprises patterning a CMOS wafer to expose Titanium-Nitride (TiN) surface for a MEMS stop and patterning the TiN to form a plurality of stop pads on the top metal aluminum surface of the CMOS wafer. The... Agent: Invensense, Inc.

20120313190 - Packaged device including interposer for increased adhesive thickness and method of attaching die to substrate: A device includes a die having: at least one of an electronic device and a microelectromechanical system, a package substrate, an electrically nonconductive interposer disposed between the die and the package substrate, at least a first adhesive layer disposed between the package substrate and the electrically nonconductive interposer, and at... Agent:

20120313192 - Magnetic stick and memory cell comprising such a stack: A magnetic stack with out of plane magnetisation, the magnetic stack including: a first magnetic layer constituted of one or more materials selected from the following group: cobalt, iron and nickel and magnetic alloys based on the materials; a second layer constituted of a metallic material able to confer to... Agent: Commissariat A I' Energie Atomique Et Aux Energies Alternatives

20120313191 - Spin-torque magnetoresistive memory element and method of fabricating same: A spin-torque magnetoresistive memory element has a high magnetoresistance and low current density. A free magnetic, layer is positioned between first and second spin polarizers. A first tunnel barrier is positioned between the first spin polarizer and the free magnetic layer and a second tunnel barrier is positioned between the... Agent: Everspin Technologies, Inc.

20120313193 - Systems and methods for three dimensional sensors: Systems and methods for fabricating a multi-axis sensor are provided. In one implementation, a method comprises: fabricating a first die having a first active surface with first application electronics; fabricating a second die having a second active surface with second application electronics and a plurality of electrical connections that extend... Agent: Honeywell International Inc.

20120313195 - Semiconductor mos entrance window for radiation detectors: A semiconductor detector device, such as a PIN diode or silicon drift detector, including a substrate with an entrance window. The entrance window comprises a conductive layer, and an insulating layer disposed between the conductive layer and the substrate. The insulating layer and conductive layer cover a center portion of... Agent:

20120313194 - Semiconductor switching device and method of making the same: A switching device including a first dielectric layer having a first top surface, two conductive features embedded in the first dielectric layer, each conductive feature having a second top surface that is substantially coplanar with the first top surface of the first dielectric layer, and a set of discrete islands... Agent: International Business Machines Corporation

20120313196 - 3-d trench electrode detectors: A three-dimensional (3D) Trench detector and a method for fabricating the detector are disclosed. The 3D-Trench detector includes a bulk of semiconductor material that has first and second surfaces separated from each other by a bulk thickness, a first electrode in the form of a 3D-Trench, and a second electrode... Agent: Brookhaven Science Associates ,llc Et Al.

20120313198 - Conductive paste composition containing lithium, and articles made therefrom: A lead-free paste composition contains an electrically conductive silver powder, one or more glass frits or fluxes, and a lithium compound dispersed in an organic medium. The paste is useful in forming an electrical contact on the front side of a solar cell device having an insulating layer. The lithium... Agent: E. I. Du Pont De Nemours And Company

20120313197 - In-pixel high dynamic range imaging: l

20120313199 - Material for forming passivation film for semiconductor substrate, passivation film for semiconductor substrate and method of producing the same, and photovoltaic cell element and method of producing the same: The invention provides a material for forming a passivation film for a semiconductor substrate. The material includes a polymer compound having an anionic group or a cationic group.... Agent: Hitachi Chemical Company, Ltd.

20120313200 - Multi-nary group ib and via based semiconductor: Methods and devices are provided for forming multi-nary semiconductor. In one embodiment, a method is provided comprising of depositing a precursor material onto a substrate, wherein the precursor material may include or may be used with an additive to minimize concentration of group IIIA material such as Ga in the... Agent: Nanosolar, Inc.

20120313206 - Image sensor having waveguides formed in color filters: An image sensor having an array of pixels disposed in a substrate. The array of pixels includes photosensitive elements, a color filters, and waveguide walls. The waveguide walls are disposed in the color filters and surround portions of the color filters to form waveguides through the color filters. In some... Agent: Omnivision Technologies, Inc.

20120313201 - Optical sensor devices including front-end-of-line (feol) optical filters and methods for fabricating optical sensor devices: Optical sensor devices, and methods of manufacturing the same, are described herein. In an embodiment, a monolithic optical sensor device includes a semiconductor substrate having a trench, with a photodetector region under said trench. An optical filter is formed in the trench and over at least a portion of the... Agent: Intersil Americas LLC

20120313202 - Photoelectric conversion device: A photoelectric conversion device comprises a photoelectric conversion layer; a plurality of structures made of a dielectric substance; and a medium layer for transmitting light interposed between the photoelectric conversion layer and the structures or between the structures, or both, wherein the plurality of structures and the medium layer satisfy... Agent: Sharp Kabushiki Kaisha

20120313205 - Photosensitive imagers having defined textures for light trapping and associated methods: Photosensitive devices and associated methods are provided. In one aspect, for example, a frontside-illuminated photosensitive imager devices can include a semiconductor substrate having multiple doped regions forming a least one junction and a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation on an opposite... Agent:

20120313204 - Process module for increasing the response of backside illuminated photosensitive imagers and associated methods: Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation where the... Agent:

20120313203 - Semiconductor package: A semiconductor package includes a wiring board, an electronic component mounted on the wiring board, and an enclosing frame arranged on an upper surface of the electronic component. The enclosing frame includes a basal portion, which has the form of a closed frame and extends along the upper surface of... Agent: Shinko Electric Industries Co., Ltd.

20120313207 - 3d integration microelectronic assembly for integrated circuit devices and method of making same: A microelectronic assembly for packaging/encapsulating IC devices, which includes a crystalline substrate handler having opposing first and second surfaces and a cavity formed into the first surface, a first IC device disposed in the cavity and a second IC device mounted to the second surface, and a plurality of interconnects... Agent:

20120313208 - Image sensor and method of forming the same: An image sensor and a method of forming the same, where the image sensor may include a substrate including a pixel region and a pad region, a through via configured to penetrate the substrate in the pad region, a plurality of unit pixels in the pixel region, and a light... Agent:

20120313209 - 3d integrated microelectronic assembly with stress reducing interconnects and method of making same: A microelectronic assembly and method of making, which includes a first microelectronic element (including a substrate with first and second opposing surfaces, a semiconductor device, and conductive pads at the first surface which are electrically coupled to the semiconductor device) and a second microelectronic element (including a handier with first... Agent:

20120313210 - Light-receiving device, light receiver using same, and method of fabricating light-receiving device: An apparatus includes a flip-chip semiconductor substrate, a light detection element configured to be formed over the flip-chip semiconductor substrate and to have a laminate structure including a first semiconductor layer of a first-conductive-type, a light-absorption layer formed over the first semiconductor layer, and a second semiconductor layer of a... Agent: Fujitsu Limited

20120313211 - Solid-state image pickup device and a method of manufacturing the same: A solid-state image pickup device includes: a silicon layer; a pixel portion formed in the silicon layer for processing and outputting signal charges obtained by carrying out photoelectric conversion for incident lights; an alignment mark formed in a periphery of the pixel portion and in the silicon layer; and a... Agent: Sony Corporation

20120313212 - Semiconductor device: A semiconductor device includes a first semiconductor region of a first conductivity type and formed of a material having a band gap wider than that of silicon; a first layer selectively disposed on a surface of and forming a first junction with the first semiconductor region; a second layer selectively... Agent: Fuji Electric Co., Ltd.

20120313213 - Polygon shaped power amplifier chips: A semiconductor structure having: a wafer; and a plurality of chips disposed on the wafer, each one of the chips having a linear array of a plurality of transistors, the linear array being at an oblique angle with respect to grid lines in the wafer separating the chips. Each one... Agent: Raytheon Company

20120313215 - Compact thermally controlled thin film resistors utilizing substrate contacts and methods of manufacture: A method of forming a semiconductor structure includes forming a resistor on an insulator layer over a substrate, and forming at least one dielectric layer over the resistor. The method also includes forming a substrate contact through the at least one dielectric layer, through the resistor, through the insulator layer,... Agent: International Business Machines Corporation

20120313214 - Polysilicon structure and method of manufacturing the same: A polysilicon structure and method of forming the polysilicon structure are disclosed, where the method includes a two-step deposition and planarization process. The disclosed process reduces the likelihood of defects such as voids, particularly where polysilicon is deposited in a trench having a high aspect ratio. A first polysilicon structure... Agent: Macronix International Co., Ltd.

20120313216 - Complementary bipolar inverter: An example embodiment is a complementary transistor inverter circuit. The circuit includes a semiconductor-on-insulator (SOI) substrate, a lateral PNP bipolar transistor fabricated on the SOI substrate, and a lateral NPN bipolar transistor fabricated on the SOI substrate. The lateral PNP bipolar transistor includes a PNP base, a PNP emitter, and... Agent: International Business Machines Corporation

20120313219 - Chip package structure and method of making the same: Methods and structures related to packaging a chip are disclosed. In one embodiment, a chip package structure includes: (i) a chip having a plurality of first and second contact pads thereon; (ii) a lead frame having a plurality of pins for external connection to the package structure, where the chip... Agent: Hangzhou Silergy Semiconductor Technology Ltd

20120313218 - Ferroelectric capacitor: A ferroelectric capacitor includes a ferroelectric film, a lower electrode in contact with one surface of the ferroelectric film, and an upper electrode in contact with the other surface of the ferroelectric film. At least one of the upper electrode and the lower electrode has a stacked electrode structure in... Agent: Rohm Co., Ltd.

20120313217 - Seal ring structure with capacitor: A semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate of a conductivity type having a chip region enclosed by a seal ring region. An insulating layer is on the semiconductor substrate. A seal ring structure is embedded in the insulating layer corresponding to the seal ring region.... Agent: Mediatek Inc.

20120313220 - High-nitrogen content metal resistor and method of forming same: A thin film metal resistor is provided that includes an in-situ formed metal nitride layer that is formed in a lower region of a deposited metal nitride layer. The in-situ formed metal nitride layer, together with the overlying deposited metal nitride layer, from a thin film metal resistor which has... Agent: International Business Machines Corporation

20120313221 - Semiconductor device and manufacturing method thereof: In accordance with an embodiment, a semiconductor device includes a substrate, a first insulating film on the substrate, wiring lines including a metal in trenches in the first insulating film, and a second insulating film. The second insulating film covers the first insulating film and the wiring line. The trenches... Agent: Kabushiki Kaisha Toshiba

20120313222 - Chip package structure and manufacturing method thereof: An embodiment of the present invention provides a manufacturing method of a chip package structure including: providing a first substrate having a plurality of predetermined scribe lines defined thereon, wherein the predetermined scribe lines define a plurality of device regions; bonding a second substrate to the first substrate, wherein a... Agent:

20120313223 - Method of fabricating an integrated circuit without ground contact pad: The disclosure relates to a method of fabricating an integrated circuit of CMOS technology in a semiconductor wafer comprising scribe lines. According to the disclosure, a ground contact pad of the integrated circuit is made in a scribe line of the wafer and is destroyed during a step of individualizing... Agent: Stmicroelectronics (rousset) Sas

20120313224 - Semiconductor device and semiconductor device manufacturing method: A semiconductor device and manufacturing method are disclosed which prevent breakage and chipping of a semiconductor chip and improve device characteristics. A separation layer is in a side surface of an element end portion of the chip. An eave portion is formed by a depressed portion in the element end... Agent: Fuji Electric Co., Ltd.

20120313225 - Integrated circuit having doped semiconductor body and method: An integrated circuit and method for making an integrated circuit including doping a semiconductor body is disclosed. One embodiment provides defect-correlated donors and/or acceptors. The defects required for this are produced by electron irradiation of the semiconductor body. Form defect-correlated donors and/or acceptors with elements or element compounds are introduced... Agent: Infineon Technologies Austria Ag

20120313227 - Semiconductor device and structure for heat removal: A semiconductor device, including: a semiconductor substrate with first layer including first transistors; a shield layer overlaying the first layer; a second layer overlaying the shield layer, the second layer including second transistors; wherein the shield layer is a mostly continuous layer with a plurality of regions for connections between... Agent:

20120313226 - Wiring substrate, semiconductor device and manufacturing method thereof: A semiconductor device includes a wiring substrate, and a semiconductor chip, wherein the wiring substrate includes a glass plate having an opening portion penetrating through a first surface of the glass plate to a second surface of the glass plate, a resin portion penetrating through the first surface to the... Agent: Shinko Electric Industries Co., Ltd.

20120313228 - Impedence controlled packages with metal sheet or 2-layer rdl: A microelectronic assembly includes an interconnection element, a conductive plane, a microelectronic device, a plurality of traces, and first and second bond elements. The interconnection element includes a dielectric element, a plurality of element contacts, and at least one reference contact thereon. The microelectronic device includes a front surface with... Agent: Tessera, Inc.

20120313229 - Package structure and manufacturing method thereof: The invention discloses a package structure for better heat-dissipation or EMI performance. A first conductive element and a second conductive element are both disposed between the top lead frame and the bottom lead frame. The first terminal of the first conductive element is electrically connected to the bottom lead frame,... Agent: Cyntec Co., Ltd.

20120313231 - Method and apparatus for dicing die attach film on a semiconductor wafer: In one aspect of the present invention, a method of sawing a semiconductor wafer will be described. A semiconductor wafer is positioned in a wafer sawing apparatus that includes a sawing blade and a movable support structure that physically supports the semiconductor wafer. The semiconductor wafer is coupled with the... Agent: National Semiconductor Corporation

20120313232 - Power package including multiple semiconductor devices: In one embodiment, a method includes attaching a film to cover a first portion of a first semiconductor die. The first semiconductor die is attached, using the tape, to a lead frame using a first bonding method. The first bonding method places the film between the lead frame and the... Agent: Shanghai Kaihong Electronic Company Limited

20120313233 - Semiconductor package, stacking semiconductor package, and method of fabricating the same: A stackable semiconductor package, a stacked semiconductor package that uses the stackable semiconductor packages, and a method of fabricating the same. The semiconductor package includes a die paddle unit having a first surface and a second surface opposite to the first surface, a semiconductor die attached to the first surface... Agent:

20120313230 - Solder alloys and arrangements: A solder alloy is providing, the solder alloy including zinc, aluminum, magnesium and gallium, wherein the aluminum constitutes by weight 8% to 20% of the alloy, the magnesium constitutes by weight 0.5% to 20% of the alloy and the gallium constitutes by weight 0.5% to 20% of the alloy, the... Agent: Infineon Technologies Ag

20120313234 - Qfn package and manufacturing process thereof: The present invention provides a Quad Flat Non-leaded (QFN) package, which comprises a chip, a lead frame, a plurality of composite bumps and an encapsulant. The chip has a plurality of pads, and the lead frame has a plurality of leads. Each of the plurality of composite bumps has a... Agent:

20120313235 - Semiconductor devices with moving members and methods for making the same: The present disclosure provides an embodiment of a micro-electro-mechanical system (MEMS) structure, the MEMS structure comprising a MEMS substrate; a first and second conductive plugs of a semiconductor material disposed on the MEMS substrate, wherein the first conductive plug is configured for electrical interconnection and the second conductive plug is... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120313237 - Bonded semiconductor structures and methods of forming same: Embodiments of the invention include methods and structures for fabricating a semiconductor structure, and, particularly for improving the planarity of a bonded semiconductor structure comprising a processed semiconductor structure and a semiconductor structure.... Agent: Soitec

20120313236 - Semiconductor device and manufacturing method for semiconductor device: A semiconductor device includes a semiconductor element, a connection electrode formed on the semiconductor element, and alignment marks formed on the semiconductor element. At least one of the alignment marks is made of a magnetic material.... Agent: Sony Corporation

20120313239 - Flip chip assembly and process with sintering material on metal bumps: A microelectronic package includes a substrate overlying the front face of a microelectronic element. A plurality of metal bumps can project from conductive elements of the substrate towards the microelectronic element, the metal bumps having first ends extending from the conductive elements, second ends remote from the conductive elements, and... Agent: Tessera, Inc.

20120313241 - Methods for surface attachment of flipped active components: A method for selectively transferring active components from a source substrate to a destination substrate includes pressing a first stamp having first pillars protruding therefrom against active components on the source substrate to adhere respective primary surfaces of the active components including electrical connections thereon to respective transfer surfaces of... Agent: Semprius, Inc.

20120313238 - Semiconductor chip package assembly and method for making same: A microelectronic assembly may include a substrate containing a dielectric element having first and second opposed surfaces. The dielectric element may include a first dielectric layer adjacent the first surface, and a second dielectric layer disposed between the first dielectric layer and the second surface. A Young's modulus of the... Agent: Tessera Research LLC

20120313240 - Semiconductor package and fabrication method thereof: A semiconductor package includes a substrate having a flip chip bonding area. A plurality of recessed bump pads are disposed in the flip chip bonding area. The substrate further includes a solder mask that covers a circuit area. A chip having a plurality of metal bumps is mounted in the... Agent:

20120313243 - Chip-scale package: A chip-scale package includes an encapsulating layer, a chip embedded in the encapsulating layer and having an active surface exposed from the encapsulating layer, a buffering dielectric layer formed on the encapsulating layer and the chip, a build-up dielectric layer formed on the buffering dielectric layer, and a circuit layer... Agent: Siliconware Precision Industries Co., Ltd.

20120313244 - Semiconductor package, electrical and electronic apparatus including the semiconductor package, and method of manufacturing the semiconductor package: In one embodiment, a semiconductor package may include a semiconductor chip having a chip pad formed on a first surface thereof, a sealing member for sealing the semiconductor chip and exposing the first surface of the semiconductor chip, a conductive wiring overlying a part of the first surface of the... Agent:

20120313242 - Substrate and assembly thereof with dielectric removal for increased post height: An interconnection substrate includes a plurality of electrically conductive elements of at least one wiring layer defining first and second lateral directions. Electrically conductive projections for bonding to electrically conductive contacts of at least one component external to the substrate, extend from the conductive elements above the at least one... Agent: Tessera, Inc.

20120313245 - Semiconductor device: One embodiment provides a semiconductor device having: a core substrate having first and second surfaces and an accommodation hole penetrating therethrough; a semiconductor element accommodated in the accommodation hole so that a front surface thereof is on the first surface side; a first metal film formed on a back surface... Agent: Shinko Electric Industries Co., Ltd.

20120313246 - Semiconductor apparatus: The disclosure relates to integrated circuit fabrication, and more particularly to a semiconductor apparatus with a metallic alloy. An exemplary structure for an apparatus comprises a first silicon substrate; a second silicon substrate; and a contact connecting each of the first and second substrates, wherein the contact comprises a Ge... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120313248 - Semiconductor device structures: The present invention relates to methods for forming through-wafer interconnects in semiconductor substrates and the resulting structures. In one embodiment, a method for forming a through-wafer interconnect includes providing a substrate having a pad on a surface thereof, depositing a passivation layer over the pad and the surface of the... Agent: Micron Technology, Inc.

20120313247 - Through silicon via structure and method: A system and method for manufacturing a through silicon via is disclosed. An embodiment comprises forming a through silicon via with a liner protruding from a substrate. A passivation layer is formed over the substrate and the through silicon via, and the passivation layer and liner are recessed from the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120313249 - Semiconductor device structures and the separating methods thereof: A method of separating semiconductor device structures comprises steps of providing a substrate having a first surface and a second surface opposite to the first surface; forming a plurality of semiconductor epitaxial stacks on the first surface; forming a patterned resist layer covering the semiconductor epitaxial stacks and exposing part... Agent:

20120313250 - Forming features on a substrate having varying feature densities: A method includes forming a cavity in a substrate, depositing a layer of conductive material in the cavity and over exposed portions of the substrate, removing portions of the conductive material to expose portions of the substrate using a planarizing process, and removing residual portions of the conductive material disposed... Agent: International Business Machines Corporation

20120313251 - Interconnect structure with improved alignment for semiconductor devices: Methods and structure are provided for creating and utilizing hard masks to facilitate creation of a grating effect to control an anisotropic etching process for the creation of an opening, and subsequent formation of a interconnect structure (e.g., a via) in a multilayered semiconductor device. A first hard mask can... Agent: Toshiba America Electronic Components, Inc.

20120313252 - Semiconductor device: A semiconductor device includes a base plate having one main surface joined to an insulating substrate on which a semiconductor chip and the like are mounted and a transfer mold resin which is so provided as to cover the one main surface of the base plate, the insulating substrate, the... Agent: Mitsubishi Electric Corporation

20120313255 - 3d integration microelectronic assembly for integrated circuit devices and method of making same: A 3D interposer (and method of making same) that includes a crystalline substrate handler having opposing first and second surfaces, with a cavity formed into the first surface. A layer of insulation material is formed on the surface of the handler that defines the cavity. The cavity is filled with... Agent:

20120313254 - Compact metal connect and/or disconnect structures: Embodiments of present invention provide methods and apparatuses for connecting and/or disconnecting nodes in a semiconductor device. Embodiments of the apparatus may include a plurality of metal layers formed above a substrate and an interconnect structure formed between first and second nodes in the plurality of metal layers. The interconnect... Agent:

20120313253 - Fan-out wlp with package: A microelectronic package includes a microelectronic unit and a substrate. The microelectronic unit includes a microelectronic element having contacts on a front face. A dielectric material has a first surface substantially flush with the front face of the microelectronic element. Conductive traces have at least portions extending along the front... Agent: C/o Tessera, Inc.

20120313256 - Non-hierarchical metal layers for integrated circuits: An integrated circuit structure includes a semiconductor substrate, and a first metal layer over the semiconductor substrate. The first metal layer has a first minimum pitch. A second metal layer is over the first metal layer. The second metal layer has a second minimum pitch smaller than the first minimum... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120313257 - Semiconductor device and method for manufacturing the semiconductor device: Certain embodiments provide a semiconductor device including a first substrate, a circuit element, a second substrate, a metal layer, and a radiation plate. The circuit element is formed on a front surface of the first substrate and has an electrode. The second substrate has a first face, and is laminated... Agent: Kabushiki Kaisha Toshiba

20120313258 - Semiconductor device having through silicon vias and manufacturing method thereof: In The semiconductor device, a semiconductor substrate has first and second surfaces. A circuitry layer is formed over the first surface and a first insulating layer is further formed over the circuitry layer. A second insulating layer including a first insulating element is formed over the second surface. A third... Agent: Elpida Memory, Inc.

20120313261 - Chip package structure and manufacturing method thereof: An embodiment of the present invention provides a manufacturing method of a chip package structure including: providing a first substrate having a plurality of predetermined scribe lines defining a plurality of device regions; bonding a second substrate to the first substrate, wherein a spacing layer is disposed therebetween and has... Agent:

20120313259 - Layered chip package and method of manufacturing same: A layered chip package includes a main body and wiring. The main body has a main part. The main part has a top surface and a bottom surface and includes a plurality of layer portions that are stacked. The wiring includes a plurality of lines passing through all the plurality... Agent: Headway Technologies, Inc.

20120313260 - Layered chip package and method of manufacturing same: A layered chip package includes a main body and wiring. The main body includes: a main part having a top surface and a bottom surface and including three or more layer portions stacked on one another; a plurality of first terminals disposed on the top surface of the main part;... Agent: Headway Technologies, Inc.

20120313262 - Stacked semiconductor device: A stacked semiconductor device includes a plurality of first electrodes provided on a first printed wiring board and columnar electrodes provided on the first electrodes. The stacked semiconductor device also includes a plurality of second electrodes provided on a second printed wiring board and a plurality of solder electrodes. The... Agent: Canon Kabushiki Kaisha

20120313263 - Three-dimensional multichip module: A three-dimensional multichip module includes a first integrated circuit chip having at least one first high-temperature functional area and one first low-temperature functional area, and at least one second integrated circuit chip having a second high-temperature functional area and a second low-temperature functional area. The second high-temperature functional area is... Agent: Infineon Technologies Ag

20120313264 - Chip with sintered connections to package: A microelectronic package and method of making same are provided. The package includes a substrate having first and second opposed surfaces, an edge surface extending therebetween, a plurality of terminals, and a plurality of conductive elements electrically connected with the terminals. The edge surface can be disposed at a periphery... Agent: Teresa, Inc.

20120313265 - Semiconductor package: A semiconductor package includes a plurality of connection pads, which are electrically connected to connection terminals of a mounted component that is mounted on the semiconductor package, and recognition marks. The recognition marks are formed respectively within the area of each of at least two of the connection pads. Each... Agent: Shinko Electric Industries Co., Ltd.

20120305872 - Phase-change memory device including a vertically-stacked capacitor and a method of the same: A phase change memory device includes a vertically-stacked capacitor structure having large capacitance and small area. The phase change memory device includes a phase change memory structure, and the vertically-stacked capacitor structure electrically connected to the phase change memory structure and comprising a first capacitor and a second capacitor that... Agent:

20120305873 - Vertical interconnect structure, memory device and associated production method: The present invention relates to a method for producing a vertical interconnect structure, a memory device and an associated production method, in which case, after the formation of a contact region in a carrier substrate a catalyst is produced on the contact region and a free-standing electrically conductive nanoelement is... Agent: Infineon Technologies Ag

20120305877 - Non-volatile memory device having a resistance-changeable element and method of forming the same: A non-volatile memory device is provided wherein a lower molding layer is formed on a substrate; a first horizontal interconnection is formed on the lower molding layer; an upper molding layer is formed on the first horizontal interconnection; a pillar is formed connected to the substrate by vertically passing through... Agent:

20120305875 - Phase-change random access memory device and method of manufacturing the same: A method of manufacturing a PCRAM device includes forming a switching device in a contact hole of a first interlayer insulating layer, forming a second interlayer insulating layer having an opening exposing the switching device, forming a lower electrode pattern along a sidewall of the second interlayer insulating layer to... Agent:

20120305876 - Schottky diode, resistive memory device having schottky diode and method of manufacturing the same: A schottky diode, a resistive memory device including the schottky diode and a method of manufacturing the same. The resistive memory device includes a semiconductor substrate including a word line, a schottky diode formed on the word line, and a storage layer formed on the schottky diode. The schottky diode... Agent:

20120305874 - Vertical diodes for non-volatile memory device: A steering device. The steering device includes an n-type impurity region comprising a zinc oxide material and a p-type impurity region comprising a silicon germanium material. A pn junction region formed from the zinc oxide material and the silicon germanium material. The steering device is a serially coupled to a... Agent: Crossbar, Inc.

20120305883 - Metal oxide resistive switching memory and method for manufacturing same: The present disclosure relates to the microelectronics field, and particularly, to a metal oxide resistive switching memory and a method for manufacturing the same. The method may comprise: forming a W-plug lower electrode above a MOS device; sequentially forming a cap layer, a first dielectric layer, and an etching block... Agent: Institute Of Microelectronics, Chinese Academy Of Sciences

20120305882 - Nio-based resistive random access memory and the preparation method thereof: The present invention belongs to the technical field of memory storage and specially relates to a NiO-based resistive random access memory system (RRAM) and a preparation method thereof. The RRAM is comprised of a substrate and a metal-insulator-metal (MIM) structure, wherein the electrodes are metal films, such as copper, aluminum,... Agent: Fudan University

20120305881 - Nitrogen doped aluminum oxide resistive random access memory: A resistive random access memory (RRAM) device is provided that includes a first electrode, a second electrode, and a resistance-change film disposed between the first electrode and the second electrode, where the resistance-change film includes an atomic ratio of aluminum, oxygen and nitrogen.... Agent:

20120305880 - Resistive random access memory with electric-field strengthened layer and manufacturing method thereof: This invention belongs to the technical field of memories and specifically relates to a resistive random access memory structure with an electric-field strengthened layer and a manufacturing method thereof. The resistive random access memory in the present invention can include a top electrode, a bottom electrode and a composite layer... Agent:

20120305878 - Resistive switching memory device: A nonvolatile memory element may include, but is not limited to: a first electrode; a second electrode; and a resistive switching material disposed between the first electrode and the second electrode, wherein at least one of the first electrode or the second electrode includes at least one of a metal... Agent: Intermolecular, Inc.

20120305879 - Switching device having a non-linear element: A switching device includes a substrate; a first electrode formed over the substrate; a second electrode formed over the first electrode; a switching medium disposed between the first and second electrode; and a nonlinear element disposed between the first and second electrodes and electrically coupled in series to the first... Agent: Crossbar, Inc.

20120305884 - Variable resistance memory device and methods of forming the same: A method of forming a memory device includes forming a first interlayer insulating layer on a semiconductor substrate, forming a first electrode in the first interlayer insulating layer, the first electrode having a top surface of a rectangular shape extending in a first direction, and forming a variable resistance pattern... Agent:

20120305885 - Variable resistance memory device with an interfacial adhesion heating layer, systems using the same and methods of forming the same: A variable resistance memory element and method of forming the same. The memory element includes a first electrode, a resistivity interfacial layer having a first surface coupled to said first electrode; a resistance changing material, e.g. a phase change material, having a first surface coupled to a second surface of... Agent: Micron Technology, Inc.

20120305886 - Nanowire fet with trapezoid gate structure: In one embodiment, a method of providing a nanowire semiconductor device is provided, in which the gate structure to the nanowire semiconductor device has a trapezoid shape. The method may include forming a trapezoid gate structure surrounding at least a portion of a circumference of a nanowire. The first portion... Agent: International Business Machines Corporation

20120305889 - Light emitting device: Disclosed is a light emitting device including a light emitting structure including a first conductive-type semiconductor layer, a second conductive-type semiconductor layer and an active layer interposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor layer, a first electrode layer electrically connected to the first conductive-type semiconductor... Agent: Lg Innotek Co., Ltd.

20120305888 - Light-emitting diode with strain-relaxed layer: Disclosed is a light-emitting diode (LED) and the method to form the LED. The LED comprises: a first conductivity type semiconductor layer; a strain-relaxed layer over the first conductivity type semiconductor layer, the strain-relaxed layer comprising: a strain-absorbed layer over the first conductivity type semiconductor layer, the strain-absorbed layer containing... Agent:

20120305890 - Light-emitting diode, light-emitting diode lamp and lighting device: A light-emitting diode, including a light emitting section including an active layer having a quantum well structure in which well layers having the composition: (InX1Ga1-X1)As (0≦X1≦1) and barrier layers having the composition: (AlX2Ga1-X2)As (0≦X2≦1) are alternately laminated, first guide and second guide layers paired to sandwich the active layer and... Agent: Showa Denko K.k.

20120305887 - White light emitting diode having photoluminescent layer: A white LED having a photoluminescent layer is provided, which includes a sapphire substrate, a gallium nitride buffer layer, an n-type gallium nitride layer, an aluminium gallium nitride multiquantum well, a p-type gallium nitride layer, a transparent conductive layer, a terbium-doped indium oxide layer as photoluminescent layer, a negative electrode,... Agent:

20120305891 - Graphene channel transistors and method for producing same: Embodiments of graphene channel transistors and methods for producing same are provided herein. In some embodiments, a graphene channel transistor may include a substrate a having a source region, a drain region, and a dielectric material disposed between the source and drain regions; a channel region comprising a graphene layer... Agent:

20120305892 - Electronic device, method of manufacturing a device and apparatus for manufacturing a device: An electronic device comprises an in-plane component formed in an organic semiconductor layer, desirably graphene, on a flexible substrate. The component is formed using imprint lithography to create a trench through the organic semiconductor layer in a roll-to-roll process. The number of process steps required is limited to allow manufacture... Agent:

20120305893 - Transistor device: The invention provides transistor device comprising a source, a drain and a connecting channel, the channel is a nano-structure device adapted to allow current flow between the source and drain. The channel comprises an ultra-high doping concentration and is of the same polarity as in the source and/or drain. Essentially... Agent: University College Cork-national University Of Ireland ,cork

20120305894 - Blue phosphorescent compound and organic electroluminescent device using the same: wherein R1 to R5 are each independently hydrogen (H), fluorine (F), chlorine (Cl), bromine (Br), a cyano group, a C1 to C6 alkyl group, a C1 to C6 alkoxy group, a C6 to C20 substituted or unsubstituted aromatic group, a C5 to C20 substituted or unsubstituted heterocyclic group, a C1... Agent:

20120305900 - Compound for organic photoelectric device and organic photoelectric device including the same: A compound for an organic photoelectric device, the compound being represented by the following Chemical Formula (“CF”) 1:... Agent:

20120305906 - Compound including indole derivative, organic electronic element using same, and terminal thereof: Disclosed are a compound including an indole derivative, an organic electronic element using the same, and a terminal thereof.... Agent: Duksan High Metal Co., Ltd.

20120305895 - Light emitting devices and compositions: A light emitting composition includes a light-emitting iridium-functionalized nanoparticle, such as a compound of formula (I). The compound of formula (I) further comprises at least one host attached to the core. A light emitting device includes an anode, a cathode, and a layer containing such a light-emitting composition is also... Agent:

20120305909 - Light-emitting element, light-emitting device, and electronic device: Disclosed is a light-emitting element with a good carrier balance and manufacturing method thereof which does not require the formation of the heterostructure. The light-emitting element includes an organic compound film containing a first organic compound as the main component (base material) between an anode and a cathode, wherein the... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120305907 - Light-emitting element, light-emitting device, electronic device, and method for fabricating light-emitting element: Objects of the present invention are to provide a light-emitting element that does not readily deteriorate, a light-emitting device and an electronic device that do not readily deteriorate, and a method of fabricating the light-emitting element that does not readily deteriorate. A light-emitting element having an EL layer between a... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120305905 - Method of producing photoelectric conversion element, photoelectric conversion element and photoelectrochemical cell: j

20120305897 - Methods of making patterned structures of fluorine-containing polymeric materials and fluorine-containing polymers: Methods and compositions for obtaining patterned structures comprising fluorine-containing polymeric materials. The fluorine-containing polymeric materials have sufficient fluorine content such that the materials can be patterned using conventional photolithographic/pattern transfer methods and maintain desirable mechanical and physical properties. The patterned structures can be used, for example, in light-emitting devices.... Agent: Cornell University

20120305902 - Microcavity oleds for lighting: Various methods and systems are provided for related to organic light emitting diodes (OLEDs) having a microcavity In one embodiment, a white-light source includes a first microcavity organic light emitting diode (OLED) configured to emit a narrow spectrum of blue light, a second microcavity OLED configured to emit a narrow... Agent:

20120305908 - Organic electroluminescence device and display: In an organic electroluminescence device including a cathode and an anode, at least an emitting layer and an electron transporting layer are provided between the cathode and the anode. The emitting layer contains a host material formed of a naphthacene derivative represented by the following formula (1) and a dopant... Agent: Idemitsu Kosan Co., Ltd.

20120305898 - Organic electroluminescence element, manufacturing method thereof, and organic electroluminescence display device: An organic EL element (1) includes a three-layer-structured light-emitting layer (5). A first light-emitting layer (5a) is made of a host material higher in HOMO than an organic light-emitting material (|HOMO (host material for first light-emitting layer)|>|HOMO (phosphorescence-emitting material)|). A second light-emitting layer (5c) is made of a host material... Agent: Sharp Kabushiki Kaisha

20120305903 - Organic electroluminescent device: Disclosed is an organic electroluminescent device (organic EL device) that is improved in luminous efficiency, sufficiently secures driving stability, and has a simple configuration. This organic EL device is constituted of an anode, organic layers comprising a phosphorescent light-emitting layer, and a cathode piled one upon another on a substrate... Agent:

20120305904 - Organic electroluminescent device: Disclosed is an organic electroluminescent device (organic EL device) that is improved in luminous efficiency, sufficiently secures driving stability, and has a simple configuration. This organic EL device has a light-emitting layer between an anode and a cathode piled one upon another on a substrate and the said light-emitting layer... Agent: Nippon Steel Chemical Co., Ltd.

20120305896 - Organometallic complex, organic light-emitting element, light-emitting device, electronic device, and lighting device: A novel and highly reliable organometallic complex which has an emission region in the wavelength band of blue to yellow is provided. A light-emitting element using the organometallic complex, a light-emitting device, an electronic device, and a lighting device each using the light-emitting element are provided. An organometallic complex including... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120305899 - Polymer compound, and thin film and ink composition each containing same: wherein Ar1 and Ar2 are each an aromatic hydrocarbon ring, a heterocycle, or a fused ring of an aromatic hydrocarbon ring and a heterocycle; and R1, R2, R3 and R4 each represent a hydrogen atom, an alkyl group, an alkoxy group, an alkylthio group, an aryl group, an aryloxy group,... Agent: Sumitomo Chemical Company, Limited

20120305901 - Quinoxaline derivatives and organic light-emitting diodes comprising the same: is provided. In Formula (I) or (II), R1, R2, R3 and R4 are, independently, hydrogen, halogen, methyl, ethyl, propyl, butyl, aryl or heteroaryl, for example phenyl, furyl, thienyl, pyridyl, pyrimidyl, benzothiazolyl or benzoimidazolyl. The disclosure also provides an organic light-emitting diode including the quinoxaline derivative.... Agent: Industrial Technology Research Institute

20120305912 - Display device and electronic device including the same: One embodiment of the present invention provides a highly reliably display device in which a high mobility is achieved in an oxide semiconductor. A first oxide component is formed over a base component. Crystal growth proceeds from a surface toward an inside of the first oxide component by a first... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120305915 - Field-effect transistor and method for fabricating field-effect transistor: A method for fabricating a field-effect transistor having a gate electrode, a source electrode, a drain electrode, and an active layer forming a channel region, the active layer having an oxide semiconductor mainly containing magnesium and indium is disclosed. The method includes a deposition step of depositing an oxide film,... Agent: Ricoh Company, Ltd.

20120305910 - Hybrid thin film transistor, manufacturing method thereof and display panel having the same: A hybrid thin film transistor includes a first thin film transistor and a second thin film transistor. The first thin film transistor includes a first gate, a first source, a first drain and a first semiconductor layer disposed between the first gate, the first source and the first drain, and... Agent: Au Optronics Corporation

20120305913 - Method for manufacturing semiconductor device: A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120305914 - Semiconductor device, display device, and electronic appliance: To reduce adverse effects on actual operation and to reduce adverse effects of noise. A structure including an electrode, a wiring electrically connected to the electrode, an oxide semiconductor layer overlapping with the electrode in a plane view, an insulating layer provided between the electrode and the oxide semiconductor layer... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120305911 - Thin film transistor substrate and manufacturing method for the same: Provided is a thin film transistor having a semiconductor film disposed in a plurality of portions on a substrate, a source electrode and a drain electrode which are disposed, on a semiconductor film, in contact with the semiconductor film while being spaced from each other, and a gate electrode which... Agent: Mitsubishi Electric Corporation

20120305916 - Interposer test structures and methods: An embodiment of the disclosure is a structure comprising an interposer. The interposer has a test structure extending along a periphery of the interposer, and at least a portion of the test structure is in a first redistribution element. The first redistribution element is on a first surface of a... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120305917 - Semiconductor device: A semiconductor device includes a first semiconductor chip that includes a driver circuit, a second semiconductor chip that includes a receiver circuit and an external terminal, and a plurality of through silicon vias that connect the first semiconductor chip and the second semiconductor chip. The first semiconductor chip further includes... Agent: Elpida Memory, Inc.

20120305918 - Perovskite semiconductor thin film and method of making thereof: Perovskite semiconductor thin films and the method of making Perovskite semiconductor thin films are disclosed. Perovskite semiconductor thin films were deposited on inexpensive substrates such as glass and ceramics. CsSnI3 films contained polycrystalline domains with typical size of 300 nm and larger. It is confirmed experimentally that CsSnI3 compound in... Agent:

20120305919 - Fullerene derivatives and optoelectronic devices utilizing the same: Disclosed is a fullerene derivative having a formula of F-Cy, wherein F is an open-cage fullerene, and Cy is a chalcogenyl group. The fullerene derivative can be applied to hydrogen storage material and an optoelectronic device such as an organic light emitting diode (OLED), a solar cell, or an organic... Agent:

20120305920 - Semiconductor device and manufacturing method thereof, display apparatus and electronic apparatus: A semiconductor device including: a first electric conductor of a lower layer side and a second electric conductor of an upper layer side; a thick film insulating layer provided between the first electric conductor and the second electric conductor; and a contact portion formed so as to imitate an inner... Agent: Sony Corporation

20120305923 - Display device: The inventors found out that in the case of performing a low gray scale display in which a very small amount of current is supplied to a light emitting element, variations in threshold voltages of driving transistors become notable since the gate-source voltage is low. In view of this, the... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120305927 - Display device: The present invention provides an active matrix type display device having a high aperture ratio and a required auxiliary capacitor. A source line and a gate line are overlapped with part of a pixel electrode. This overlapped region functions to be a black matrix. Further, an electrode pattern made of... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120305922 - Display device, electronic apparatus, and method of fabricating the display device: It is an object of the invention to provide a technique to manufacture a display device with high image quality and high reliability at low cost with high yield. The invention has spacers over a pixel electrode layer in a pixel region and over an insulating layer functioning as a... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120305924 - Semiconductor device and method of manufacturing thereof: To provide a liquid crystal display device having high quality display by obtaining a high aperture ratio while securing a sufficient storage capacitor (Cs), and at the same time, by dispersing a load (a pixel writing-in electric current) of a capacitor wiring in a timely manner to effectively reduce the... Agent: Semiconductor Energy Laboratory Co., Ltd

20120305926 - Solid-state imaging device, process of making solid state imaging device, digital still camera, digital video camera, mobile phone, and endoscope: A solid-state imaging device includes an array of pixels, each pixel includes: a pixel electrode; an organic layer; a counter electrode; a sealing layer; a color filter; a readout circuit; and a light-collecting unit as defined herein, the photoelectric layer contains an organic p type semiconductor and an organic n... Agent: Fujifilm Corporation

20120305921 - Thin film transistor, manufacturing method of thin film transistor, and organic light emitting diode display including the same: A thin film transistor may include a substrate, a buffer layer on the substrate, a semiconductor layer formed on the buffer layer, a gate insulating pattern on the semiconductor layer, a gate electrode on the gate insulating pattern, an interlayer insulating layer covering the gate electrode and the gate insulating... Agent:

20120305925 - Thin-film transistor substrate: Gate electrodes, a gate insulating layer, and an oxide semiconductor layer are simultaneously formed to form a multilayer structure, so that an SOG film serves as an etching stopper on channel regions in forming source electrodes and drain electrodes. In the SOG film, channel isolation holes are formed in positions... Agent: Sharp Kabushiki Kaisha

20120305929 - Beol compatible fet structrure: This invention provides structures and a fabrication process for incorporating thin film transistors in back end of the line (BEOL) interconnect structures. The structures and fabrication processes described are compatible with processing requirements for the BEOL interconnect structures. The structures and fabrication processes utilize existing processing steps and materials already... Agent: International Business Machines Corporation

20120305928 - Methodology for fabricating isotropically recessed source regions of cmos transistors: A Field Effect Transistor (FET) device includes a gate stack formed over a channel region, a source region adjacent to the channel region, wherein a portion of a boundary between the source region and the channel region is defined along a plane defined by a sidewall of the gate stack,... Agent: International Business Machines Corporation

20120305930 - Semiconductor device, and manufacturing method for same: A semiconductor device of the present invention includes an n-channel first thin film transistor and a p-channel second thin film transistor on one and the same substrate. The first thin film transistor has a first semiconductor layer (27), and the second thin film transistor has a second semiconductor layer (22).... Agent: Sharp Kabushiki Kaisha

20120305935 - Apparatus for producing metal chloride gas and method for producing metal chloride gas, and apparatus for hydride vapor phase epitaxy, nitride semiconductor wafer, nitride semiconductor device, wafer for nitride semiconductor light emitting diode, method: There is provided an apparatus for producing metal chloride gas, comprising: a source vessel configured to store a metal source; a gas supply port configured to supply chlorine-containing gas into the source vessel; a gas exhaust port configured to discharge metal chloride-containing gas containing metal chloride gas produced by a... Agent: Hitachi Cable, Ltd.

20120305931 - Gold-free ohmic contacts: A semiconductor structure is provided having: a semiconductor; a gold-free electrically conductive structure in ohmic contact with the semiconductor; and a pair of electrically conductive layers separated by a layer of silicon. The structure includes: a refractory metal layer disposed in contact with the semiconductor; and wherein one of the... Agent: Raytheon Company

20120305933 - Group iii nitride semiconductor light-emitting device: A group III nitride semiconductor light-emitting device includes a GaN crystal substrate and at least one group III nitride semiconductor layer disposed on a main surface of the GaN crystal substrate. The substrate includes a matrix crystal region and a c-axis-inverted crystal region. An off angle θ is formed between... Agent: Sumitomo Electric Industries, Ltd.

20120305932 - Lateral trench mesfet: A transistor includes a trench formed in a semiconductor body, the trench having sidewalls and a bottom. The transistor further includes a first semiconductor material disposed in the trench adjacent the sidewalls and a second semiconductor material disposed in the trench and spaced apart from the sidewalls by the first... Agent: Infineon Technologies Austria Ag

20120305939 - Light emitting diodes including barrier sublayers: Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on... Agent: Cree, Inc.

20120305934 - Nitride semiconductor light emitting element and method for manufacturing the same: A nitride semiconductor light emitting element has: a substrate for growth; an n-type nitride semiconductor layer formed on the substrate for growth; a light emitting layer formed on the n-type nitride semiconductor layer; and a p-type nitride semiconductor layer formed on the light emitting layer, wherein pipe holes are formed... Agent: Sharp Kabushiki Kaisha

20120305938 - Nitride semiconductor light-emitting device: A semiconductor light emitting device is provided. The semiconductor light emitting device includes a first nitride layer, an active layer, and a second nitride layer. The first nitride layer includes an irregular, uneven surface, and the active layer is formed on the irregular, uneven surface. The second nitride layer is... Agent:

20120305936 - Semiconductor device: A semiconductor device includes: a nitride semiconductor layer; a source electrode, a gate electrode and a drain electrode; an insulating layer covering at least the gate electrode and a part of the nitride semiconductor layer; and a field plate on the insulating layer, a width of a region of the... Agent: Sumitomo Electric Industries, Ltd.

20120305937 - Semiconductor light-emitting device: A semiconductor light-emitting diode, and method of fabricating same, wherein an indium (In)-containing light-emitting layer, as well as subsequent device layers, is deposited on a textured surface. The resulting device is a phosphor-free white light source.... Agent: The Regents Of The University Of California

20120305940 - Defect free si:c epitaxial growth: A method and structure are disclosed for a defect free Si:C source/drain in an NFET device. A wafer is accepted with a primary surface of {100} crystallographic orientation. A recess is formed in the wafer in such manner that the bottom surface and the four sidewall surfaces of the recess... Agent: International Business Machines Corporation

20120305942 - Epitaxial substrate, light-emitting diode, and methods for making the epitaxial substrate and the light-emitting diode: An epitaxial substrate includes: a base member; and a plurality of spaced apart light-transmissive members, each of which is formed on and tapers from an upper surface of the base member, and each of which is made of a light-transmissive material having a refractive index lower than that of the... Agent: Aceplux Optotech Inc.

20120305945 - Power semiconductor device: It is a power semiconductor device capable of operating under a temperature of 150° C. or greater having an electrode laminated on a wide bandgap semiconductor substrate and a connection terminal joined to the electrode for connection to external wiring, which power semiconductor device is characterized in that difference among... Agent:

20120305944 - Semiconductor element: A semiconductor element according to the present invention can perform both a transistor operation and a diode operation via its channel layer. If the potential Vgs of its gate electrode 165 with respect to that of its source electrode 150 is 0 volts, then a depletion layer with a thickness... Agent: Panasonic Corporation

20120305943 - Silicon carbide semiconductor device and method for manufacturing same: A drift layer has a thickness direction throughout which a current flows and has an impurity concentration N1d for a first conductivity type. A body region is provided on a portion of the drift layer, has a channel to be switched by a gate electrode, has an impurity concentration N1b... Agent: Sumitomo Electric Industries, Ltd.

20120305941 - Well region formation method and semiconductor base: A well region formation method and a semiconductor base in the field of semiconductor technology are provided. A method comprises: forming isolation regions in a semiconductor substrate to isolate active regions; selecting at least one of the active regions, and forming a first well region in the selected active region;... Agent:

20120305946 - Modular high density led array light sources: A modular LED array light source comprises an assembly of a plurality of solid-state LED array modules. Modules are abutted to provide a large area, high intensity, and high-density array that provides substantially uniform irradiance. Preferably, in each module, a linear or rectangular array of groups of LED is provided... Agent:

20120305950 - Display apparatus: Disclosed is a method of making a display apparatus including a step of forming an underlying layer on a substrate, the underlying layer having a protrusion; and a step of depositing a material of a lens portion so as to form a film having a shape that follows a shape... Agent: Canon Kabushiki Kaisha

20120305949 - Light emitting diode (led) arrays including direct die attach and related assemblies: An electronic device may include a packaging substrate having a packaging face and first and second pluralities of light emitting diodes electrically and mechanically coupled to the packaging face of the packaging substrate. The packaging substrate may include first and second electrically conductive pads on the packaging face. The light... Agent:

20120305951 - Light-emitting device having light-emitting elements: A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge... Agent: Seoul Semiconductor Co., Ltd.

20120305948 - Light-emitting diode and method for making the same: A light-emitting diode includes: an epitaxial substrate including a base member, and a plurality of spaced apart first light-transmissive members; a light-emitting unit including a first-type semiconductor layer, a light-emitting layer, and a second-type semiconductor layer; and an electrode unit electrically connected to the light-emitting unit. The first-type semiconductor layer... Agent: Aceplux Optotech Inc.

20120305947 - Thin film transistor substrate and method for fabricating the same: A thin film transistor substrate and a method for fabricating the same are discussed. According to an embodiment, the thin film transistor substrate includes a gate line arranged on a substrate in a first direction; a data line arranged in a second direction crossing the gate line to define adjacent... Agent:

20120305953 - Mixed light source: A mixed light source comprising: a first radiation source, which emits radiation in the red spectral range; an excitation source, which contains a III-V semiconductor material; and a conversion substance, which, during the operation of the mixed light source, converts the radiation of the excitation source at least partly into... Agent:

20120305952 - Organic el device: An organic EL device includes: a bank provided to surround a first anode (second anode) on a substrate; a red emission layer (green emission layer) provided at an opening portion of the bank; a third anode having the same polarity as that of the first anode provided on the bank;... Agent: Seiko Epson Corporation

20120305954 - Light emitting device, light emitting system having the same, and fabricating method of the light emitting device and the light emitting system: A semiconductor device includes a first light emitting chip, the first light emitting chip having a first semiconductor layer, a second semiconductor layer, and a first active layer disposed therebetween, a second light emitting chip disposed on the first light emitting chip, the second light emitting chip having a third... Agent:

20120305975 - Dissipation module for a light emitting device and light emitting diode device having the same: A light emitting diode device is provided. The light emitting diode device comprises a composite substrate and a light emitting diode disposed on the composite substrate. The composite substrate comprises a first carbon fiber composite layer which is able to conduct heat rapidly in the direction of carbon fiber, such... Agent: Everlight Electronics Co., Ltd.

20120305967 - Flip chip type light emitting diode and manufacturing method thereof: The present disclosure provides a flip chip type light emitting diode which comprises a substrate and a light emitting diode chip. The substrate comprises a body, a plurality of third pads, a fourth pad, a first electrode, a second electrode, a plurality of first vias, and a second via. The... Agent: Everlight Electronics Co., Ltd.

20120305961 - Led device and method for manufacturing the same: An LED device comprises a substrate, an LED chip and a luminescent conversion layer. The substrate comprises a first electrode, a second electrode and a reflector located on top faces of the first and the second electrodes. The LED chip is disposed on the first electrode and electrically connected to... Agent: Advanced Optoelectronic Technology, Inc.

20120305960 - Led package and method for making the same: An LED package includes a substrate, an electrode structure, an LED die, a packaging portion, and a covering portion. The electrode structure is formed on the substrate. The LED die is mounted on the substrate, and electrically connected to the electrode structure. The packaging portion covers the LED die. The... Agent: Advanced Optoelectronic Technology, Inc.

20120305956 - Led phosphor patterning: The present disclosure provides a method of patterning a phosphor layer on a light emitting diode (LED) emitter. The method includes providing at least one LED emitter disposed on a substrate; forming a polymer layer over the at least one LED emitter; providing a mask over the polymer layer and... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120305968 - Light emitting device: Provided is a light emitting device that can suppress variation in a resonance frequency of a mode, so that light emission can be enhanced at high efficiency even in a case where photonic crystal, in which defect cavities are periodically arranged, is used. The light emitting device includes: an active... Agent: Canon Kabushiki Kaisha

20120305971 - Light emitting device lens, light emitting device module including light emitting device lens and method for manufacturing light emitting device module using light emitting device lens: A lens according to an embodiment of the present invention may include a first depression and a second depression having predetermined patterns in a lower portion of the lens, and a phosphor layer and the lens may be collectively formed by disposing the lens after spraying a phosphor rather than... Agent: Samsung Electronics Co., Ltd.

20120305962 - Light emitting device package and lighting system: A light emitting device package is disclosed. The light emitting device package includes a light emitting device disposed on a first lead frame, the light emitting device having an electrode pad on an upper surface thereof, a first wire to electrically interconnect a second lead frame spaced apart from the... Agent:

20120305970 - Light emitting device package and manufacturing method thereof: There is provided a light emitting device package including a substrate having a cavity therein; alight emitting device mounted on a bottom surface of the cavity; a first wavelength conversion part including a first phosphor for a wavelength conversion of light emitted from the light emitting device and covering the... Agent:

20120305972 - Light emitting diode device with luminescent material: The invention provides a light emitting diode device comprising a light emitting diode arranged on a substrate and a wavelength converting element. The wavelength converting element contains a luminescent material a Mn4+-activated fluoride compound having a garnet-type crystal structure. The Mn4+-activated fluoride compound preferably answers the general formula {A3}[B2-x-yMnxMgy] (Li3)... Agent: Koninklijke Philips Electronics N.v.

20120305965 - Light emitting diode substrate and light emitting diode: A light emitting diode (LED) substrate includes a sapphire substrate which is characterized by having a surface consisting of irregular hexagonal pyramid structures, wherein a pitch of the irregular hexagonal pyramid structure is less than 10 μm. A symmetrical cross-sectional plane of each of the irregular hexagonal pyramid structures has... Agent: Sino-american Silicon Products Inc.

20120305963 - Light-emitting device and luminaire: According to one embodiment, a light-emitting device includes a substrate, a reflecting layer formed on the substrate, a light-emitting element placed on the reflecting layer, and a sealing resin layer that covers the reflecting layer and the light-emitting element. The oxygen permeability of the sealing resin layer is equal to... Agent: Toshiba Lighting & Technology Corporation

20120305973 - Light-emitting device and surface light source device using the same: To provide a light emitting device which emits high-luminance, uniform white light with reduced variations in luminance, a light emitting element 101 is mounted on a substrate 105 and covered with a wavelength conversion layer 106 of uniform thickness, and then a light scattering layer 107 made of a translucent... Agent:

20120305959 - Light-emitting diode device and method for manufacturing the same: A light-emitting diode (LED) device, includes a substrate, having a first and a second surfaces, a first bonding layer, disposed on the first surface, a first epitaxial structure, having a third and a fourth surfaces and comprising a first and a second groove, wherein the first epitaxial structure comprises a... Agent: Chi Mei Lighting Technology Corp.

20120305955 - Luminescent particles, methods and light emitting devices including the same: A luminescent particle includes a luminescent compound that is configured to perform a photon down conversion on a portion of received light. The luminescent compound includes a host compound material and an activator material that is combined with the host compound material. The activator material is provided in a quantity... Agent:

20120305966 - Organic light emitting diode and method of fabricating the same: Provided are an organic light emitting diode and a method of fabricating the same. The organic light emitting diode may include a light-scattering layer, a first electrode, an organic light-emitting layer, and a second electrode, which are sequentially stacked on a substrate, wherein the light-scattering layer may include uneven shaped... Agent: Electronics And Telecommunications Research Institute

20120305958 - Red nitride phosphors: Provided according to embodiments of the invention are phosphor compositions that include Ca1-x-ySrxEuyAlSiN3, wherein x is in a range of 0.50 to 0.99 and y is less than 0.013. Also provided according to embodiments of the invention are phosphor compositions that include Ca1-x-ySrxEuyAlSiN3, wherein x is in a range of... Agent:

20120305969 - Reflecting material and light emitting diode device: A reflecting material contains a silicone resin composition prepared from a polysiloxane containing silanol groups at both ends, an ethylenic silicon compound, a silicon compound containing an epoxy group, an organohydrogenpolysiloxane, a condensation catalyst, and an addition catalyst; and a light reflecting component.... Agent: Nitto Denko Corporation

20120305974 - Semiconductor light emitting device: A semiconductor light emitting device comprises a first nitride semiconductor layer comprising a flat top surface and a plurality of concave regions from the flat top surface, a reflector within the concave regions of the first semiconductor layer, and a second semiconductor layer on the first semiconductor layer.... Agent:

20120305964 - Semiconductor light emitting element and method for manufacturing same: According to one embodiment, a semiconductor light emitting element includes a light emitting element includes a semiconductor stacked body including a light emitting layer, a reflection layer, a support substrate, a first bonding electrode and a second bonding electrode. The reflection layer is made of a metal and has a... Agent: Kabushiki Kaisha Toshiba

20120305957 - Solid state lighting devices having side reflectivity and associated methods of manufacture: Solid state lighting devices having side reflectivity and associated methods of manufacturing are disclosed herein. In one embodiment, a method of forming a solid state lighting device includes attaching a solid state emitter to a support substrate, mounting the solid state emitter and support substrate to a temporary carrier, and... Agent: Micron Technology, Inc.

20120305977 - Interposer and manufacturing method thereof: An embodiment of the present invention provides a manufacturing method of an interposer including: providing a semiconductor substrate having a first surface, a second surface and at least a through hole connecting the first surface to the second surface; electrocoating a polymer layer on the first surface, the second surface... Agent:

20120305978 - Led lamps: A high power LED lamp has a GaN chip placed over an AlGaInP chip. A reflector is placed between the two chips. Each of the chips has trenches diverting light for output. The chip pair can be arranged to produce white light having a spectral distribution in the red to... Agent: Epistar Corporation

20120305980 - Led lamps: A high power LED lamp has a GaN chip placed over an AlGaInP chip. A reflector is placed between the two chips. Each of the chips has trenches diverting light for output. The chip pair can be arranged to produce white light having a spectral distribution in the red to... Agent: Epistar Corporation

20120305976 - Light emitting device package and lighting system including the same: A light emitting device package is disclosed. The light emitting device package includes a body, first and second lead frames disposed on the body, and a light emitting device connected to the first and second lead frames, wherein at least one of the first and second lead frames includes first... Agent:

20120305979 - Light-emitting diode, method for manufacturing the same, and light-emitting diode lamp: The present invention provides a light-emitting diode that includes two electrodes provided on a light-emitting surface, and exhibits high light extraction efficiency and high-brightness. The present invention relates to a light-emitting diode (1) including: a compound semiconductor layer (2) including a light-emitting portion (7) containing a light-emitting layer (10); and... Agent: Showa Denko K.k.

20120305982 - Optical semiconductor sealing material: The present invention provides an optical semiconductor sealing material comprising a radically polymerized polymer of a methacrylate ester having an alicyclic hydrocarbon group containing 7 or more carbon atoms, e.g. an adamantyl group, a norbornyl group, or a dicyclopentanyl group; and an optical semiconductor sealing material comprising a radically polymerized... Agent: Idemitsu Kosan Co., Ltd.

20120305981 - Organic light emitting diode display and method for manufacturing organic light emitting diode display: A method of manufacturing an OLED display includes: forming an organic light emitting element on a first substrate; forming, on the organic light emitting element, a thin film encapsulation layer that seals the organic light emitting element with the first substrate; providing a second substrate; forming a flexible protection layer... Agent: Samsung Mobile Display Co., Ltd.

20120305983 - Method for producing group-iii nitride semiconductor crystal, group-iii nitride semiconductor substrate, and semiconductor light emitting device: The method for producing a group III nitride semiconductor crystal comprises preparing a seed crystal having a non-polar plane followed by growing a group III nitride semiconductor from the non-polar plane in a vapor phase, wherein the growing includes growing the group III nitride semiconductor so as to extend in... Agent: Mitsubishi Chemical Corporation

20120305984 - Scr/mos clamp for esd protection of integrated circuits: An electrostatic discharge (ESD) protection circuit, methods of fabricating an ESD protection circuit, methods of providing ESD protection, and design structures for an ESD protection circuit. An NFET may be formed in a p-well and a PFET may be formed in an n-well. A butted p-n junction formed between the... Agent: International Business Machines Corporation

20120305985 - Power semiconductor device comprising a plurality of trench igbts: A power semiconductor device with improved avalanche capability structures is disclosed. By forming at least an avalanche capability enhancement doped regions with opposite conductivity type to epitaxial layer underneath an ohmic contact doped region which surrounds at least bottom of trenched contact filled with metal plug between two adjacent gate... Agent: Force Mos Technology Co. Ltd.

20120305986 - Semiconductor structure and method for forming the same: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a wafer; a plurality of convex structures formed on the wafer, in which every two adjacent convex structures are separated by a cavity in a predetermined pattern and arranged in an array, and the... Agent: Tsinghua University

20120305987 - Lateral trench mesfet: A transistor includes a trench formed in a semiconductor body, the trench having sidewalls and a bottom. The transistor further includes a first semiconductor material disposed in the trench adjacent the sidewalls and a second semiconductor material disposed in the trench and spaced apart from the sidewalls by the first... Agent: Infineon Technologies Austria Ag

20120305989 - Method to prevent surface decomposition of iii-v compound semiconductors: A method of preventing surface decomposition of a III-V compound semiconductor is provided. The method includes forming a silicon film having a thickness from 10 Å to 400 Å on a surface of an III-V compound semiconductor. After forming the silicon film onto the surface of the III-V compound semiconductor,... Agent: International Business Machines Corporation

20120305990 - Methods and apparatus to reduce layout based strain variations in non-planar transistor structures: The present disclosure relates to the field of fabricating microelectronic devices. In at least one embodiment, the present disclosure relates to forming isolation structures in strained semiconductor bodies of non-planar transistors while maintaining strain in the semiconductor bodies.... Agent:

20120305988 - Semiconductor structure and method for forming the same: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate; a plurality of convex structures formed on the substrate, in which every two adjacent convex structures are separated by a cavity; a plurality of floated films, in which each floated film is... Agent: Tsinghua University

20120305991 - Device having series-connected high electron mobility transistors and manufacturing method thereof: A manufacturing method of a device having series-connected HEMTs is presented. Transistors are formed on a substrate and integratedly serial-connected as an integrated device by interconnection wires. Therefore, the voltage of the device is the sum of the voltages across each transistors so that the device can have high breakdown... Agent: National Chiao Tung University

20120305992 - Hybrid monolithic integration: The present invention describes a hybrid integrated circuit comprising both CMOS and III-V devices, monolithically integrated in a single chip. It allows the almost complete elimination of the contamination issues related to the integration of different technologies, maintaining at the same time a good planarization of the structure. It further... Agent:

20120305993 - Transistor with controllable compensation regions: A semiconductor device includes a gate terminal, at least one control terminal and first and second load terminals and at least one device cell. The at least one device cell includes a MOSFET device having a load path and a control terminal, the control terminal coupled to the gate terminal... Agent: Infineon Technologies Austria Ag

20120305994 - Self-aligned trench field effect transistors with regrown gates and bipolar junction transistors with regrown base contact regions and methods of making: Junction field-effect transistors with vertical channels and self-aligned regrown gates and methods of making these devices are described. The methods use techniques to selectively grow and/or selectively remove semiconductor material to form a p-n junction gate along the sides of the channel and on the bottom of trenches separating source... Agent: Ss Sc Ip, LLC

20120305995 - Performance enhancement in transistors by providing an embedded strain-inducing semiconductor material on the basis of a seed layer: In sophisticated semiconductor devices, transistors may be formed on the basis of a high-k metal gate electrode structure provided in an early manufacturing phase, wherein an efficient strain-inducing mechanism may be implemented by using an embedded strain-inducing semiconductor alloy. In order to reduce the number of lattice defects and provide... Agent: Globalfoundries Inc.

20120305996 - Semiconductor device: An area occupied by a circuit element having at least a capacitor and a transistor is reduced in a semiconductor device. In a semiconductor device including a first transistor, a second transistor, and a capacitor, the first transistor and the capacitor are provided over the second transistor. Then, a common... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120305997 - Semiconductor devices having recessed channels: A semiconductor device includes a substrate, a gate insulation layer, a gate structure, a gate spacer, and first and second impurity regions. The substrate has an active region defined by an isolation layer. The active region has a gate trench thereon. The gate insulation layer is formed on an inner... Agent: Samsung Electronics Co., Ltd.

20120305998 - High density memory cells using lateral epitaxy: In a vertical dynamic memory cell, monocrystalline semiconductor material of improved quality is provided for the channel of an access transistor by lateral epitaxial growth over an insulator material (which complements the capacitor dielectric in completely surrounding the storage node except at a contact connection structure, preferably of metal, from... Agent: International Business Machines Corporation

20120305999 - Semiconductor device and method of manufacturing the same: Provided are a semiconductor device capable of increasing an ON current with a reduced channel resistance, and also capable of stably and independently operating respective transistors, and a method of manufacturing the semiconductor device. A semiconductor device includes a fin portion located in a manner that a part of an... Agent: Elpida Memory, Inc.

20120306000 - Formation of field effect transistor devices: A method includes defining active regions on a substrate, forming a dummy gate stack material over exposed portions of the active regions of the substrate and non-active regions of the substrate, removing portions of the dummy gate stack material to expose portions of the active regions and non-active regions of... Agent: International Business Machines Corporation

20120306001 - Semiconductor device and manufacturing method thereof: A semiconductor device includes a semiconductor substrate having a main surface, a MONOS-type memory cell formed over the main surface and having a channel, an n-channel transistor formed over the main surface, and a p-channel transistor formed over the man surface. Nitride films are formed in a manner to contact... Agent: Renesas Electronics Corporation

20120306002 - Accumulation type finfet, circuits and fabrication method thereof: This description relates to a fin field-effect-transistor (FinFET) including a substrate and a fin structure on the substrate. The fin structure includes a channel between a source and a drain, wherein the source, the drain, and the channel have a first type dopant, and the channel comprises at least one... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120306004 - Semiconductor memory device: Provided is a semiconductor memory device. The semiconductor memory device may include a local bitline extending in a direction substantially vertical to an upper surface of a semiconductor substrate and a local wordline intersecting the local bitline. The local bitline is electrically connected to a bitline channel pillar penetrating a... Agent:

20120306003 - Transistor with controllable compensation regions: Disclosed is a MOSFET including at least one transistor cell. The at least one transistor cell includes a source region, a drain region, a body region and a drift region. The body region is arranged between the source region and the drift region and the drift region is arranged between... Agent: Infineon Technologies Ag

20120306007 - Semiconductor device and method for manufacturing same: According to one embodiment, a semiconductor device includes a substrate, a gate electrode, source/drain regions, and a gate insulating film. The substrate is made of monocrystalline silicon, an upper surface of the substrate is a (100) plane, and a trench is made in the upper surface. The gate electrode is... Agent: Kabushiki Kaisha Toshiba

20120306006 - Semiconductor power device: A semiconductor power device includes a substrate, a first semiconductor layer on the substrate, a second semiconductor layer on the first semiconductor layer, and a third semiconductor layer on the second semiconductor layer. At least a recessed epitaxial structure is disposed within a cell region and the recessed epitaxial structure... Agent:

20120306005 - Trough channel transistor and methods for making the same: The present invention relates to transistor devices having a trough channel structure through which electrical current flows and methods for making the same. A transistor device having a semiconductor trough structure comprises a semiconductor substrate of a first conductivity type having a top surface; a semiconductor trough protruded from the... Agent:

20120306008 - Semiconductor device and method for manufacturing the same: A method for manufacturing a semiconductor device comprises forming a buried gate after forming an active region to have a line type. The buried gate comprises an operation gate and a non-operation gate. A height of a gate electrode layer (conductive material) of the non-operation gate is formed to be... Agent: Hynix Semiconductor Inc.

20120306009 - Integration of superjunction mosfet and diode: A semiconductor structure comprises a semiconductor layer of a first conductivity type, trenches extending into the semiconductor layer, and a conductive layer of a second conductivity type lining sidewalls and bottom of each trench and forming PN junctions with the semiconductor layer. A first plurality of the trenches are disposed... Agent:

20120306010 - Dmos transistor having an increased breakdown voltage and method for production: A depletion type DMOS transistor comprises a gap in electrode material allowing incorporation of a well dopant species into the underlying semiconductor material. During subsequent dopant diffusion a continuous well region is obtained having an extended lateral extension without having an increased depth. The source dopant species is implanted after... Agent:

20120306011 - Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same: An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped... Agent: Enpirion, Inc.

20120306012 - Power integrated circuit device with incorporated sense fet: In one embodiment, a power integrated circuit device includes a main lateral high-voltage field-effect transistor (HVFET) and an adjacently-located lateral sense FET, both of which are formed on a high-resistivity substrate. A sense resistor is formed in a well region disposed in an area of the substrate between the HVFET... Agent: Power Integrations, Inc.

20120306013 - Metal oxide semiconductor output circuits and methods of forming the same: Metal oxide semiconductor (MOS) protection circuits and methods of forming the same are disclosed. In one embodiment, an integrated circuit includes a pad, a p-type MOS (PMOS) transistor, and first and second n-type MOS (NMOS) transistors. The first NMOS transistor includes a drain, a source and a gate electrically connected... Agent: Analog Devices, Inc.

20120306014 - Stress enhanced ldmos transistor to minimize on-resistance and maintain high breakdown voltage: A lateral diffused metal-oxide-semiconductor field effect transistor (LDMOS transistor) employs a stress layer that enhances carrier mobility (i.e., on-current) while also maintaining a high breakdown voltage for the device. High breakdown voltage is maintained, because an increase in doping concentration of the drift region is minimized. A well region and... Agent: International Business Machines Corporation

20120306015 - Contacts for fet devices: A device characterized as being an FET device structure with enlarged contact areas is disclosed. The device has a vertically recessed isolation, thereby having an exposed sidewall surface on both the source and the drain. A silicide layer is covering both the top surface and the sidewall surface of both... Agent: International Business Machines Corporation

20120306016 - Devices with gate-to-gate isolation structures and methods of manufacture: A method includes forming a plurality of trenches in a pad film to form raised portions, and depositing a hard mask in the trenches and over the upper pad film. The method includes forming a plurality of fins including the raised portions and a second plurality of fins including the... Agent: International Business Machines Corporation

20120306017 - Wiring switch designs based on a field effect device for reconfigurable interconnect paths: An integrated circuit, including a substrate, at least one metal wiring layer disposed above the substrate. The metal wiring layer including a wiring switch and a plurality of patterned conductors. The wiring switch including a back gate field effect transistor (BGFET).... Agent: International Business Machines Corporation

20120306018 - Beol structures incorporating active devices and mechanical strength: A monolithic integrated circuit and method includes a substrate, a plurality of semiconductor device layers monolithically integrated on the substrate, and a metal wiring layer with vias interconnecting the plurality of semiconductor device layers. The semiconductor device layers are devoid of bonding or joining interface with the substrate. A method... Agent: International Business Machines Corporation

20120306019 - Fabrication of devices having different interfacial oxide thickness via lateral oxidation: A semiconductor device includes a first field effect transistor (FET) and a second FET located on a substrate, the first FET comprising a first interfacial oxide layer, and the second FET comprising a second interfacial oxide layer, wherein the second interfacial oxide layer of the second FET is thicker than... Agent: International Business Machines Corporation

20120306020 - Semiconductor device and manufacturing method of the same: In a non-insulated DC-DC converter having a circuit in which a power MOS•FET high-side switch and a power MOS•FET low-side switch are connected in series, the power MOS•FET low-side switch and a Schottky barrier diode to be connected in parallel with the power MOS•FET low-side switch are formed within one... Agent: Renesas Electronics Corporation

20120306021 - Semiconductor device and method of fabrication: A semiconductor device is provided that includes a first pair of P channel field effect transistors (PFET) with a common source connected to a voltage contact and a gate connected to a drain of the other PFET and a pair of N channel field effect transistors (NFET) sized smaller than... Agent: Globalfoundries Inc.

20120306022 - Metal oxide semiconductor transistor layout with higher effective channel width and higher component density: The disclosure is a metal oxide semiconductor transistor layout with higher effective channel width and higher component density. The layout discloses a common drain region with straight cross pattern, a plurality of common drain regions with lattice pattern, a common source region with straight cross pattern, a plurality of common... Agent:

20120306023 - Device-manufacturing scheme for increasing the density of metal patterns in inter-layer dielectrics: A method includes forming a transistor at a surface of a semiconductor substrate, wherein the step of forming the transistor comprises forming a gate electrode, and forming a source/drain region adjacent the gate electrode. First metal features are formed to include at least portions at a same level as the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120306025 - Integrated circuit including cross-coupled transistors with two transistors of different type having gate electrodes formed by common gate level feature with shared diffusion regions on opposite sides of common gate level feature: A semiconductor device includes first and second p-type diffusion regions, and first and second n-type diffusion regions that are each electrically connected to a common node. Each of a number of conductive features within a gate electrode level region is fabricated from a respective originating rectangular-shaped layout feature, with a... Agent: Tela Innovations, Inc.

20120306024 - Scalable construction for lateral semiconductor components having high current-carrying capacity: The invention relates to semiconductor components, in particular to a scalable construction for lateral semiconductor components having high current-carrying capacity. A transistor cell according to the invention comprises a control electrode (203), a plurality of source fields (201) and a plurality of drain fields (202). The control electrode completely encloses... Agent:

20120306026 - Replacement gate electrode with a tungsten diffusion barrier layer: A tungsten barrier portion is employed in a replacement gate structure to block diffusion of material from a metal portion to a work function material portion. The tungsten barrier portion effectively functions as a diffusion barrier layer between the metal portion and the work function material portion so that the... Agent: International Business Machines Corporation

20120306027 - Transistors with embedded strain-inducing material formed in cavities provided by an oxidizing etch process: When forming sophisticated semiconductor devices including transistors with sophisticated high-k metal gate electrode structures and a strain-inducing semiconductor alloy, transistor uniformity and performance may be enhanced by providing superior growth conditions during the selective epitaxial growth process. To this end, a semiconductor material may be preserved at the isolation regions... Agent: Globalfoundries Inc.

20120306028 - Semiconductor process and structure thereof: A semiconductor process is provided, including: a substrate is provided, a buffer layer is formed, and a dielectric layer having a high dielectric constant is formed, wherein the methods of forming the buffer layer include: (1) an oxidation process is performed; and a baking process is performed; Alternatively, (2) an... Agent:

20120306029 - Semiconductor device and method of manufacturing the same: To provide a semiconductor device with a TFT, capable of reducing the electric resistance of a power supply wiring without increasing the off-current. The semiconductor device includes an insulating film with a surface; a semiconductor layer which is formed over the surface of the insulating film and which includes a... Agent: Renesas Electronics Corporation

20120306030 - Balancing a microelectromechanical system: A method of balancing a microelectromechanical system comprises determining if a microelectromechanical system is balanced in a plurality of orthogonal dimensions, and if the microelectromechanical system is not balanced, selectively depositing a first volume of jettable material on a portion of the microelectromechanical system to balance the microelectromechanical system in... Agent:

20120306031 - Semiconductor sensor device and method of packaging same: A semiconductor sensor die is packaged with a footed lid that has side walls and a top portion with a central hole. Gel material is dispensed into a cavity formed by the side walls such that it covers the die prior to attaching the lid top portion.... Agent: Freescale Semiconductor, Inc.

20120306032 - Method of bonding semiconductor substrate and mems device: Disclosed is a method for bonding semiconductor substrates, wherein an eutectic alloy does run off the bonding surfaces during the eutectic bonding. Also disclosed is an MEMS device which is obtained by bonding semiconductor substrates by this method. Specifically, a substrate (11) and a substrate (21) are eutectically bonded with... Agent: Pioneer Corporation

20120306034 - Magnetoresistive device: A magnetoresistive device having a magnetic junction including a first fixed magnetic layer structure, a second fixed magnetic layer structure, and a free magnetic layer structure, wherein the first second and free magnetic layer structures are arranged one over the other. The first second and free magnetic layer structures have... Agent: Agency For Science, Technology And Research

20120306033 - Vialess memory structure and method of manufacturing same: A method of manufacturing a magnetic memory cell, including a magnetic tunnel junction (MTJ), includes using silicon nitride layer and silicon oxide layer to form a trench for depositing copper to be employed for connecting the MTJ to other circuitry without the use of a via.... Agent: Avalanche Technology, Inc.

20120306036 - Flip-chip photodiode: A photodiode is provided according to various embodiments. In some embodiments, the photodiode includes a substrate and an active region. The active region is configured to receive light through the substrate. In such a configuration, the substrate not only participates in the photodiode operation acts as a light filter depending... Agent: Cubic Corporation

20120306037 - Photoelectric conversion device and manufacturing method: A photoelectric conversion device is provided which is capable of improving the light condensation efficiency without substantially decreasing the sensitivity. The photoelectric conversion device has a first pattern provided above an element isolation region formed between adjacent two photoelectric conversion elements, a second pattern provided above the element isolation region... Agent: Canon Kabushiki Kaisha

20120306035 - Process for fabricating a backside-illuminated imaging device and corresponding device: An integrated imaging device includes a silicon layer provided over a dielectric multilayer. The dielectric multilayer includes a top silicon-dioxide layer, an intermediate silicon-nitride layer and a bottom silicon-dioxide layer. Imaging circuitry is formed at a frontside of the silicon layer. An isolating structure surrounds the imaging circuitry and extends... Agent: Stmicroelectronics (crolles 2) Sas

20120306038 - Semiconductor device and method of forming ewlb semiconductor package with vertical interconnect structure and cavity region: A semiconductor device has a substrate containing a transparent or translucent material. A spacer is mounted to the substrate. A first semiconductor die has an active region and first conductive vias electrically connected to the active region. The active region can include a sensor responsive to light received through the... Agent: Stats Chippac, Ltd.

20120306040 - Insulating metal substrate and semiconductor device: An insulating metal substrate is used for a semiconductor device such as a solar cell. The substrate includes a metal base made of steel, iron-based alloy steel or titanium, an aluminum layer and an insulating layer obtained by anodizing aluminum. An alloy layer primarily made of an alloy of a... Agent: Fujifilm Corporation

20120306039 - Sub-pixel nbn detector: A method of making a two-dimensional detector array (and of such an array) comprising, for each of a plurality of rows and a plurality of columns of individual detectors, forming an n-doped semiconductor photo absorbing layer, forming a barrier layer comprising one or more of AlSb, AlAsSb, AlGaAsSb, AlPSb, AlGaPSb,... Agent:

20120306041 - Detection device manufacturing method, detection device, and detection system: In a method of manufacturing a detection device including pixels on a substrate, each pixel including a switch element and a conversion element including an impurity semiconductor layer on an electrode, which is disposed above the switch element and isolated per pixel, the switch element and the electrode being connected... Agent: Canon Kabushiki Kaisha

20120306042 - Mgs solar-blind uv radiation detector: A UV detector is designed to provide a photoresponse with a cutoff wavelength below a predetermined wavelength. The detector uses a sensor element having an active layer comprising a MgS component grown directly on a substrate. A thin layer metal layer is deposited over the active layer and forms a... Agent: The Hong Kong University Of Science And Technology

20120306043 - Junction barrier schottky (jbs) with floating islands: A Schottky diode includes a Schottky barrier and a plurality of dopant regions disposed near the Schottky barrier as floating islands to function as PN junctions for preventing a leakage current generated from a reverse voltage. At least a trench opened in a semiconductor substrate with a Schottky barrier material... Agent:

20120306044 - Edge termination configurations for high voltage semiconductor power devices: This invention discloses a semiconductor power device disposed in a semiconductor substrate and having an active cell area and an edge termination area wherein the edge termination area comprises a wide trench filled with a field-crowding reduction filler and a buried field plate buried under a top surface of the... Agent: Alpha And Omega Semiconductor Incorporated

20120306045 - Active tiling placement for improved latch-up immunity: A semiconductor device includes CMP dummy tiles (36) that are converted to active tiles by forming well regions (42) at a top surface of the dummy tiles, forming silicide (52) on top of the well regions, and forming a metal interconnect structure (72, 82) in contact with the silicided well... Agent:

20120306047 - Chip-on-film structure for liquid crystal panel: The present invention provides a chip on film (COF) structure for a liquid crystal panel, which is disposed on an edge of a glass substrate of an array substrate of a liquid crystal panel. The COF structure comprises a plastic substrate, a metal layer, an adhesive layer, a driver chip... Agent: Shenzhen China Star Optoelectronics Technology Co. Ltd.

20120306046 - Power semiconductor device with high blocking voltage capacity: A power semiconductor device includes an active device region disposed in a semiconductor substrate, an edge termination region disposed in the semiconductor substrate between the active device region and a lateral edge of the semiconductor substrate and a trench disposed in the edge termination region which extends from a first... Agent: Infineon Technologies Austria Ag

20120306048 - Electrically programmable metal fuse: A metal electrically programmable fuse (“eFuse”) includes a metal strip, having a strip width, of a metal line adjoined to wide metal line portions, having widths greater than the metal strip width, at both ends of the metal strip. The strip width can be a lithographic minimum dimension, and the... Agent: International Business Machines Corporation

20120306049 - Metal trench capacitor and improved isolation and methods of manufacture: A high-k dielectric metal trench capacitor and improved isolation and methods of manufacturing the same is provided. The method includes forming at least one deep trench in a substrate, and filling the deep trench with sacrificial fill material and a poly material. The method further includes continuing with CMOS processes,... Agent: International Business Machines Corporation

20120306050 - Method for improving prompt dose radiation response of mixed-signal integrated circuits: A system and method for improving the prompt dose radiation response of mixed-signal integrated circuits is disclosed. An internal analog circuit inside a mixed-signal integrated circuit generates an internal analog reference voltage that has been used for various purposes in the integrated circuit. At least one external capacitor is added... Agent: Bae Systems Information And Electronic Systems Integration Inc.

20120306051 - Semiconductor device and a method of manufactoring the same: In connection with a semiconductor device including a capacitor element there is provided a technique capable of improving the reliability of the capacitor element. A capacitor element is formed in an element isolation region formed over a semiconductor substrate. The capacitor element includes a lower electrode and an upper electrode... Agent: Renesas Electronics Corporation

20120306052 - Silicon wafer and method of manufacturing thereof, and method of manufacturing semiconductor device: An object of the present invention is to provide an epitaxial wafer on which dislocation is preventable even when a LSA treatment is performed in device processes. An epitaxial wafer according to the present invention includes a wafer 11 whose nitrogen concentration is 1×1012 atoms/cm3 or more or whose specific... Agent: Sumco Corporation

20120306053 - Solution-based synthesis of cssni3: This invention discloses a solution-based synthesis of cesium tin tri-iodide (CsSnI3) film. More specifically, the invention is directed to a solution-based drop-coating synthesis of cesium tin tri-iodide (CsSnI3) films. CsSnI3 films are ideally suited for a wide range of applications such as light emitting and photovoltaic devices.... Agent:

20120306054 - Method of forming high growth rate, low resistivity germanium film on silicon substrate: A method of forming a doped semiconductor layer on a substrate is provided. A foundation layer having a crystal structure compatible with a thermodynamically favored crystal structure of the doped semiconductor layer is formed on the substrate and annealed, or surface annealed, to substantially crystallize the surface of the foundation... Agent: Applied Materials, Inc.

20120306055 - Method of forming high growth rate, low resistivity germanium film on silicon substrate: A method of forming a doped semiconductor layer on a substrate is provided. A foundation layer having a crystal structure compatible with a thermodynamically favored crystal structure of the doped semiconductor layer is formed on the substrate and annealed, or surface annealed, to substantially crystallize the surface of the foundation... Agent: Applied Materials, Inc

20120306056 - Semiconductor wafer and method of producing the same: A semiconductor wafer (100) having a regular pattern of predetermined separation lanes (102) is provided, wherein the predetermined separation lanes (102) are configured in such a way that the semiconductor wafer is singularizable along the regular pattern.... Agent: Nxp B.v.

20120306057 - Method for manufacturing semiconductor device: A method for manufacturing a semiconductor device is disclosed. In the method for manufacturing the semiconductor device, a capacitor structure is modified to ensure capacitance of the capacitor, and the height of the capacitor is reduced to prevent defects such as a leaning capacitor or a poor bridge from being... Agent: Hynix Semiconductor Inc.

20120306058 - Method for blister-free passivation of a silicon surface: A method of forming a surface passivation layer on a surface of a crystalline silicon substrate is disclosed. In one aspect, the method includes depositing an Al2O3 layer on the surface, the Al2O3 layer having a thickness not exceeding about 15 nm; performing an outgassing process at a temperature in... Agent: Imec

20120306059 - Selective wet etching of hafnium aluminum oxide films: Methods and etchant compositions for wet etching to selectively remove a hafnium aluminum oxide (HfAlOx) material relative to silicon oxide (SiOx) are provided.... Agent: Micron Technology, Inc.

20120306060 - Protective structure: A protective structure is produced by providing a semiconductor substrate having doping of a first conductivity type. A semiconductor layer having doping of a second conductivity type is applied at a surface of the semiconductor substrate. A buried layer with doping of a second conductivity type is formed in a... Agent:

20120306061 - Apparatus and method for grounding an ic package lid for emi reduction: Methods and apparatus for improved electromagnetic interference (EMI) shielding and thermal performance in integrated circuit (IC) packages are described. A die-up or die-down package includes a protective lid, a plurality of ground posts, an IC die, and a substrate. The substrate includes a plurality of ground planes. The IC die... Agent: Broadcom Corporation

20120306063 - High-frequency module manufacturing method: In a method of manufacturing a high-frequency module, a resin substrate with a high frequency circuit including an electronic component mounted thereon is placed so that the electronic component faces a resin bath. A resin which is in a non-flowable state in the resin bath is softened until the resin... Agent: Panasonic Corporation

20120306062 - Semiconductor device, semiconductor package, and electronic device: A semiconductor device, a semiconductor package, and an electronic device are provided. The electronic device includes a first semiconductor package disposed on a circuit substrate. A second semiconductor package is provided on the circuit substrate and spaced apart from the first semiconductor package. An insulating electromagnetic shielding structure is provided... Agent:

20120306064 - Chip package: A chip package including a lead frame, a heat sink, a chip and a molding compound is provided. The lead frame includes a chip pad and a plurality of leads, wherein the chip pad has a first surface and a second surface opposite thereto. The heat sink has a third... Agent: Novatek Microelectronics Corp.

20120306066 - Electronic device including a packaging substrate having a trench: An electronic device can include a packaging material having a first surface and a second surface opposite the first surface, and leads including die connection surfaces and external connection surfaces. The electronic device can further include a trench extending from an upper surface of the packaging substrate towards a lower... Agent:

20120306065 - Semiconductor package with pre-soldered grooves in leads: A packaged semiconductor device includes a die pad on which a semiconductor die that includes a plurality of bond pads is attached. A plurality of lead terminals surround the die pad, wherein the plurality of bond pads are connected to the plurality of lead terminals, and the plurality of lead... Agent: Texas Instruments Incorporated

20120306067 - Thermally enhanced integrated circuit package: According to an embodiment, an integrated circuit package comprises a chip, a thermal component, and a molding compound. The chip comprises an active surface and a backside surface opposite the active surface. The thermal component is physically coupled to the backside surface of the chip. The molding compound encapsulates the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120306069 - Electronic module: An electronic module. One embodiment includes a carrier. A first transistor is attached to the carrier. A second transistor is attached to the carrier. A first connection element includes a first planar region. The first connection element electrically connects the first transistor to the carrier. A second connection element includes... Agent: Infineon Technologies Ag

20120306068 - Semiconductor device fabrication method and semiconductor device: A semiconductor device is manufactured by forming a first dielectric film on a substrate, forming an aperture in the first dielectric film, mounting a semiconductor chip in the aperture, forming a second dielectric film on the first dielectric film and the semiconductor chip, and forming an interconnection wiring structure on... Agent: Lapis Semiconductor Co., Ltd.

20120306073 - Connector design for packaging integrated circuits: A device includes a top dielectric layer having a top surface. A metal pillar has a portion over the top surface of the top dielectric layer. A non-wetting layer is formed on a sidewall of the metal pillar, wherein the non-wetting layer is not wettable to the molten solder. A... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120306070 - Electrical connection for chip scale packaging: A system and method for providing a post-passivation and underbump metallization is provided. An embodiment comprises a post-passivation layer that is larger than an overlying underbump metallization. The post-passivation layer extending beyond the underbump metallization shields the underlying layers from stresses generated from mismatches of the materials' coefficient of thermal... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120306074 - Semiconductor chip having bump electrode, semiconductor device having the semiconductor chip, and method for manufacturing the semiconductor device: A semiconductor chip includes: a substrate; a first bump electrode formed on one face of the substrate; a second bump electrode formed on other face of the substrate; and a conductive bonding material layer formed on a top face of at least one of the first bump electrode and the... Agent: Elpida Memory, Inc.

20120306072 - Semiconductor wafer with reduced thickness variation and method for fabricating same: According to one embodiment, a semiconductor wafer comprises a plurality of solder bumps for providing device contacts formed over a functional region of the semiconductor wafer, and one or more support rings surrounding the functional region. The one or more support rings and the plurality of solder bumps are formed... Agent: International Rectifier Corporation

20120306071 - Wafer-level package device: Wafer-level package semiconductor devices are described that have a smallest distance between two adjacent attachment bumps smaller than about twenty-five percent (25%) of a pitch between the two adjacent attachment bumps. The smallest distance between the two adjacent attachment bumps allows for an increase in the number of attachment bumps... Agent: Maxim Integrated Products, Inc.

20120306078 - Exposed interconnect for a package on package system: An integrated circuit packaging system includes: providing a substrate; mounting an integrated circuit above the substrate; connecting an interposer to the integrated circuit with a wire-in-film adhesive; connecting an exposed interconnect having an upper surface to the substrate; and encapsulating the integrated circuit with an encapsulation.... Agent:

20120306077 - Semiconductor device: A semiconductor device includes an electrode pad provided on a semiconductor chip, the electrode pad includes aluminum (Al) of between 50% wt. and 99.9% wt. and further includes copper (Cu), a coupling ball that primarily includes Cu, the coupling ball being coupled to the electrode pad so that a CuAl2... Agent: Renesas Electronics Corporation

20120306076 - Semiconductor micro-connector with through-hole via and a method for making the same: A micro-connector fabricated from a semiconductor material is disclosed. The micro-connector has one or more low resistance regions having a predetermined low resistance through its thickness. Opposing surfaces of the semiconductor layer have one or more complementary and opposing receiving volumes and one or more complementary mating elements defined on... Agent: Isc8 Inc.

20120306075 - Semiconductor package apparatus: A semiconductor package apparatus includes a first semiconductor package including a first semiconductor chip, a first substrate, a first terminal, and a first signal transfer medium, and a second semiconductor package including a second semiconductor chip, a second substrate, a second terminal, and a second signal transfer medium. At least... Agent:

20120306079 - Semiconductor device: A semiconductor device includes a substrate, a surface electrode of aluminum-containing material formed on the substrate, a metal film of solderable material formed on the surface electrode, and an end-securing film securing an end of the metal film and having a portion on the surface electrode and also having an... Agent: Mitsubishi Electric Corporation

20120306080 - Packaging structures and methods: A package component is free from active devices therein. The package component includes a substrate, a through-via in the substrate, a top dielectric layer over the substrate, and a metal pillar having a top surface over a top surface of the top dielectric layer. The metal pillar is electrically coupled... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120306081 - Semiconductor device and semiconductor device manufacturing method: According to one embodiment, a semiconductor device includes an interconnect provided on a first interlayer insulating film covering a semiconductor substrate in which an element is formed, a cap layer provided on the upper surface of the interconnect, and a barrier film provided between the interconnect and a second interlayer... Agent:

20120306082 - Semiconductor device and structure for heat removal: A device, including: a first layer of first transistors, overlaid by at least one interconnection layer, wherein the interconnection layer includes metals such as copper or aluminum; a second layer including second transistors, the second layer overlaying the interconnection layer, wherein the second layer is less than about 0.4 micron... Agent: Monolithic 3d Inc.

20120306083 - Semiconductor integrated circuit with multi-cut via and automated layout method for the same: A semiconductor integrated circuit includes a first wiring, a second wiring, a third wiring, a fourth wiring, a first overlap area, a second overlap area, a multi-cut via, the multi-cut via including a first via and a second via formed in the first direction, and a single-cut via formed to... Agent: Renesas Electronics Corporation

20120306084 - Semiconductor constructions having through-substrate interconnects, and methods of forming through-substrate interconnects: Some embodiments include methods of forming interconnects through semiconductor substrates. An opening may be formed to extend partway through a semiconductor substrate, and part of an interconnect may be formed within the opening. Another opening may be formed to extend from a second side of the substrate to the first... Agent: Micron Technology, Inc.

20120306085 - Protective layer for protecting tsv tips during thermo-compressive bonding: A method of protecting through substrate via (TSV) die from bonding damage includes providing a substrate including a plurality of TSV die having a topside including active circuitry, a bottomside, and a plurality of TSVs that include an inner metal core that reaches from the topside to protruding TSV tips... Agent: Texas Instruments Incorporated

20120306086 - Semiconductor device and wiring substrate: A semiconductor device according to an embodiment includes an insulating substrate, a wiring layer formed on a first main surface of the insulating substrate, and a semiconductor element mounted on the wiring layer. In this semiconductor device, the wiring layer includes a first copper-containing material containing copper and a metal... Agent: Sumitomo Electric Industries, Ltd.

20120306087 - Semiconductor device including excess solder: A semiconductor device includes a substrate including a first metal layer, a first semiconductor chip having sidewalls, and a first solder layer contacting the first semiconductor chip and the first metal layer. The first metal layer includes a groove extending around sidewalls of the first semiconductor chip. The groove is... Agent: Infineon Technologies Ag

20120306089 - Apparatuses including stair-step structures and methods of forming the same: Methods for forming semiconductor structures are disclosed, including a method that involves forming sets of conductive material and insulating material, forming a first mask over the sets, forming a first number of contact regions, forming a second mask over a first region of the sets, and removing material from of... Agent: Micron Technology, Inc.

20120306092 - Conductive pads defined by embedded traces: An assembly and method of making same are provided. The assembly can include a first component including a dielectric region having an exposed surface, a conductive pad at the surface defined by a conductive element having at least a portion extending in an oscillating or spiral path along the surface,... Agent: Tessera, Inc.

20120306090 - Conductive structures, systems and devices including conductive structures and related methods: Conductive structures include a plurality of conductive steps and a contact extending at least partially therethrough in communication with at least one of the plurality of conductive steps and insulated from at least another one of the conductive steps. Devices may include such conductive structures. Systems may include a semiconductor... Agent: Micron Technology, Inc.

20120306091 - Connecting system for electrically connecting electronic devices and method for connecting an electrically conductive first connector and electrically conductive second connector: A semiconductor module system includes a substrate, at least one semiconductor chip, and a number of at least two electrically conductive first connecting elements. The substrate has a bottom side and a top side spaced apart from the bottom side in a vertical direction. The at least one semiconductor chip... Agent: Infineon Technologies Ag

20120306088 - Method and system for internal layer-layer thermal enhancement: The exemplary embodiments of the present invention provide a method and apparatus for enhancing the cooling of a chip stack of semiconductor chips. The method includes creating a first chip with circuitry on a first side and creating a second chip electrically and mechanically coupled to the first chip by... Agent: International Business Machines Corporation

20120306093 - Converting metal mask to metal-oxide etch stop layer and related semiconductor structure: A method includes providing a semiconductor structure including a plurality of devices; depositing a nitride cap over the semiconductor structure; forming an aluminum mask over the nitride cap, the aluminum mask including a plurality of first openings; converting the aluminum mask to an aluminum oxide etch stop layer; and performing... Agent: International Business Machines Corporation

20120306098 - Curing low-k dielectrics for improving mechanical strength: An integrated circuit structure including reflective metal pads is provided. The integrated circuit structure includes a semiconductor substrate; a first low-k dielectric layer overlying the semiconductor substrate, wherein the first low-k dielectric layer is a top low-k dielectric layer; a second low-k dielectric layer immediately underlying the first low-k dielectric... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120306096 - Method and model of carbon nanotube based through silicon vias (tsv) for rf applications: A carbon nanotube (CNT) through silicon via (TSV) for three-dimensional (3D) substrate interconnects is described. TSV technologies provide for high performance and high density 3D packages. The CNT-based TSVs provide for integration of analog, RF and mixed-signal integrated circuits. CNT-based TSV provides superior electrical characteristics as compared to conventional TVs... Agent: The Board Of Trustees Of The University Of Alabama

20120306099 - Multilayered board semiconductor device with bga package: In a lamination type semiconductor device, in the case where a power source plane is wrapped by a closed area to prevent the needless radiation from being leaked to the outside of the semiconductor package, a planar conductor for shield having an area intersecting with the respective layers is required.... Agent: Renesas Electronics Corporation

20120306101 - Semiconductor device: A power line structure is implemented which is capable of securing large interconnection resources for signal lines while suppressing a power supply voltage drop. Power supply potential lines and substrate potential lines are formed in a first wiring layer, and power supply strap lines are formed in a wiring layer... Agent: Panasonic Corporation

20120306097 - Semiconductor device and method of forming wlcsp structure using protruded mlp: A semiconductor device can include a carrier substrate, and a first semiconductor die disposed on a surface of the carrier substrate. An encapsulant can be disposed over the first semiconductor die and the carrier substrate. The semiconductor device can include first vias disposed through the encapsulant as well as second... Agent: Stats Chippac, Ltd.

20120306100 - Semiconductor device and method of manufacturing the same: A method of manufacturing a semiconductor device, includes temporarily fixing a semiconductor chip to a supporting member to direct a connection electrode toward the supporting member side, forming an insulating layer for preventing resin-permeation covering the semiconductor chip, on the supporting member and the semiconductor chip, forming a resin substrate... Agent: Shinko Electric Industries Co., Ltd.

20120306095 - Semiconductor package and fabrication method of the same: A semiconductor package and a fabrication method are provided. The semiconductor package includes a first substrate including opposite first and second surfaces, a first through electrode penetrating the first substrate, a second substrate including opposite third and fourth surfaces, a second through electrode penetrating the second substrate, an insulating pattern... Agent: Samsung Electronics Co., Ltd

20120306094 - Signal routing using through-substrate vias: The present description relates to the field of microelectronic devices and the fabrication thereof, wherein through-substrate vias are utilized to route signals between microelectronic integrated circuit components, such as transistors, resistors, capacitors, inductors, and the like, within the microelectronic devices. The through-substrate vias may be used for routing critical signals,... Agent:

20120306102 - Integrated circuit packaging system with package stacking and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing a base package carrier; mounting an interposer over the base package carrier; forming a base package encapsulation over the base package carrier and the interposer with the base package encapsulation having a cavity for exposing the interposer; and... Agent:

20120306103 - Stacked electronic component and manufacturing method thereof: A stacked electronic component comprises a first electronic component adhered on a substrate via a first adhesive layer, and a second electronic component adhered by using a second adhesive layer thereon. The second adhesive layer has a two-layer structure formed by a same material and having different modulus of elasticity.... Agent: Kabushiki Kaisha Toshiba

20120306104 - Semiconductor device and method of forming interconnect structure with conductive pads having expanded interconnect surface area for enhanced interconnection properties: A semiconductor device has a substrate and first conductive pads formed over the substrate. An interconnect surface area of the first conductive pads is expanded by forming a plurality of recesses into the first conductive pads. The recesses can be an arrangement of concentric rings, arrangement of circular recesses, or... Agent: Stats Chippac, Ltd.

20120306105 - Multi-component power structures and methods for forming the same: In one embodiment, a method for forming a multi-component power structure for use in electrically propelled vehicles may include constraining a parent material system between a power component and a thermal device. The parent material system may include a low temperature material having a relatively low melting point and a... Agent: Toyota Motor Engineering & Manufacturing North America, Inc.

20120306106 - Semiconductor device having dummy pattern and design method thereof: Disclosed herein is the semiconductor substrate, wiring patterns and dummy patterns. A margin region is formed around the wiring pattern. The dummy region is further formed around the margin region. The dummy patterns are formed in the dummy region. The dummy patterns are arranged along the extending direction of the... Agent: Elpida Memory, Inc.

20120306107 - Silicone resin composition, silicone resin sheet, optical semiconductor element device, and producing method of silicone resin sheet: A silicone resin composition contains a first organopolysiloxane having, in one molecule, both at least two ethylenically unsaturated hydrocarbon groups and at least two hydrosilyl groups; a second organopolysiloxane having, in one molecule, at least two hydrosilyl groups without containing an ethylenically unsaturated hydrocarbon group; a hydrosilylation catalyst; and a... Agent: Nitto Denko Corporation