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Active solid-state devices (e.g., transistors, solid-state diodes) April category listing, related patent applications 04/12

20120097911 - Phase change memory cell structures and methods: Phase change memory cell structures and methods are described herein. A number of methods of forming a phase change memory cell structure include forming a dielectric stack structure on a first electrode, wherein forming the dielectric stack structure includes creating a second region between a first region and a third... Agent: Micron Technology, Inc.

20120097910 - Resistance element and inverting buffer circuit: There is provided a resistance element and an inverting buffer circuit to suppress a change in a resistance value caused by a potential of a semiconductor substrate in the neighborhood of the resistance element layer, a power line passing on or above the resistance element layer, or a signal line,... Agent:

20120097912 - Semiconductor device: For example, one memory cell is configured using two memory cell transistors and one phase change element by disposing a plurality of diffusion layers in parallel to a bit-line, disposing gates between the diffusion layers so as to cross the bit-line, disposing bit-line contacts and source contacts alternately to the... Agent: Renesas Electronics Corporation

20120097913 - Integrated circuitry comprising nonvolatile memory cells and methods of forming a nonvolatile memory cell: An integrated circuit has a nonvolatile memory cell that includes a first electrode, a second electrode, and an ion conductive material there-between. At least one of the first and second electrodes has an electrochemically active surface received directly against the ion conductive material. The second electrode is elevationally outward of... Agent:

20120097914 - Memory device and method for manufacturing same: According to one embodiment, a memory device includes a selection element layer, a nanomaterial aggregate layer, and a fine particle. The nanomaterial aggregate layer is stacked on the selection element layer. The nanomaterial aggregate layer has a plurality of micro conductive bodies aggregated with an interposed gap. The fine particle... Agent: Kabushiki Kaisha Toshiba

20120097915 - Nonvolatile memory device and manufacturing method thereof: There are provided a resistance variable nonvolatile memory device which changes its resistance stably at low voltages and is suitable for a miniaturized configuration, and a manufacturing method thereof. The nonvolatile memory device comprises: a substrate (100); a first electrode (101); an interlayer insulating layer (102); a memory cell hole... Agent:

20120097916 - Semiconductor device and method for manufacturing same: The present invention provides a semiconductor device comprising a resistance-variable element provided within multiple wiring layers on a semiconductor substrate, wherein the resistance-variable element comprises a laminated structure in which a first electrode, a first ion-conductive layer of valve-metal oxide film, a second ion-conductive layer containing oxygen and a second... Agent: Nec Corporation

20120097917 - Aligned, coated nanowire arrays for gas sensing: Aligned nanowire arrays were coated with semiconductor shell layers, and optionally with noble metal nanoparticles for use as three dimensional gas sensors. The sensors show room-temperature responses to low concentrations of various gases. Arrays containing different sensor types can discriminate among different gases, based upon changes in conductivity and response... Agent:

20120097921 - Cadmium-free re-emitting semiconductor construction: Disclosed re-emitting semiconductor constructions (RSCs) may provide full-color RGB or white-light emitting devices that are free of cadmium. Some embodiments may include a potential well that comprises a III-V semiconductor and that converts light of a first photon energy to light of a smaller photon energy, and a window that... Agent: 3m Innovative Properties Company

20120097920 - Iii-nitride light-emitting diode and method of producing the same: This invention relates to structures and fabricating methods of light-emitting diodes capable of emitting white or a color within full-visible-spectrum with better efficiency and flexibility. An embodiment provides a light-emitting diode array consisted of one or more light-emitting diodes on a substrate. Each light-emitting diode comprises a first doped nanorod,... Agent:

20120097918 - Implanted current confinement structure to improve current spreading: Ion implantation is used to form a current confinement structure, such as that in a light emitting diode. This current confinement structure defines multiple cells in one embodiment, each of which may surround an undoped region. The ion implantation may be performed between formation of the various layers. In one... Agent: Varian Semiconductor Equipment Associates, Inc.

20120097922 - Light emitting element, method of producing same, lamp, electronic equipment, and mechinical apparatus: There is provided a light-emitting element in which the driving voltage is reduced and light extraction efficiency is improved, a method of manufacturing the light-emitting element, a lamp, electronic equipment, and a mechanical apparatus. This is achieved by using a light-emitting element (1) which includes an n-type semiconductor layer (12),... Agent: Showa Denko K.k.

20120097919 - Limiting strain relaxation in iii-nitride hetero-structures by substrate and epitaxial layer patterning: A method of fabricating a substrate for a semipolar III-nitride device, comprising patterning and forming one or more mesas on a surface of a semipolar III-nitride substrate or epilayer, thereby forming a patterned surface of the semipolar III-nitride substrate or epilayer including each of the mesas with a dimension/along a... Agent: The Regents Of The University Of California

20120097923 - Graphene device and method for manufacturing the same: The invention provides a graphene device structure and a method for manufacturing the same, the device structure comprising a graphene layer; a gate region in contact with the graphene layer; semiconductor doped regions formed in the two opposite sides of the gate region and in contact with the graphene layer,... Agent: Institute Of Microelectronics, Chinese Academy Of Sciences

20120097932 - Condensed-cyclic compound, organic light-emitting diode comprising the same and flat panel display device comprising the organic light-emitting diode: A condensed-cyclic compound of Formula 1, an organic light-emitting diode (OLED) including the same and a flat panel display device including the OLED. The condensed-cyclic compound of Formula 1 may be used in an organic light-emitting diode. Accordingly, an OLED according to an embodiment of the present invention includes a... Agent: Samsung Mobile Display Co., Ltd.

20120097929 - Heterocyclic compound and organic light-emitting device including the same: c

20120097937 - Material for organic electroluminescence device and organic electroluminescence device utilizing the same: A material for organic electroluminescence devices of the invention which is for use in combination with at least one phosphorescent metal complex has a specific heterocyclic structure. The material for organic electroluminescence devices is used as a host material or a hole transporting material. An organic electroluminescence device having an... Agent: Idemitsu Kosan Co., Ltd.

20120097931 - Method of forming emission layer of organic light emitting display device, method of manufacturing organic light emitting display device including emission layer, and organic light emitting display device thereof: A method of forming an emission layer by using droplets and an emission part on which charges with opposite polarities are induced, a method of manufacturing an organic light emitting display device including the emission layer, and the organic light emitting display device thereof, the method includes inducing charges having... Agent: Samsung Mobile Display Co., Ltd.

20120097926 - Oled display and method of fabricating the same: An OLED (OLED) display is provided with a plurality of pixels in each of the OLEDs, each of the OLEDs comprising a first electrode, an organic emission layer, and a second electrode sequentially formed on a substrate, wherein the organic emission layer comprises a mixture of at least two organic... Agent:

20120097939 - Organic el device, method for fabricating organic el device, and organic el illumination system: An organic EL device 1, for example, excellent in productivity and performance with reduced influence of a voltage drop can be provided at low fabrication cost. The organic EL device 1 includes band-shaped organic EL strips 3 arranged at spacings on a first substrate 2. Each of the organic EL... Agent: Sharp Kabushiki Kaisha

20120097933 - Organic el display device and manufacturing method of the same: Disclosed herein is an organic EL display device including, on a substrate: lower electrodes; first hole injection/transport layers; second organic light-emitting layers of colors other than blue; a blue first organic light-emitting layer; electron injection/transport layers; and an upper electrode.... Agent: Sony Corporation

20120097934 - Organic light emitting diode and method of fabricating the same: An organic light emitting diode includes a first electrode on a substrate; a hole transporting layer on the first electrode; a light emitting material layer on the hole transporting layer; an electron transporting layer on the light emitting material layer and doped with a metal; a second electrode on the... Agent:

20120097927 - Organic light emitting diode display: An organic light emitting diode (OLED) display may be constructed with a substrate; a first electrode formed on the substrate; a barrier rib formed on the substrate and having an opening exposing the first electrode; an organic emission layer formed on the first electrode; and a second electrode formed on... Agent: Samsung Mobile Display Co., Ltd.

20120097928 - Organic light emitting diode display: An organic light emitting diode (OLED) display includes: a substrate including a first area and a second area; a first electrode at the first area of the substrate, and a first electrode at the second area of the substrate; a reflective electrode on the first electrode at the first area;... Agent:

20120097924 - Organic light-emitting device: A heterocyclic compound represented by a general Formula 1 and an organic light-emitting device including the heterocyclic compound. In some embodiments the heterocyclic compound of Formula 1 may be used as a light-emitting material, a hole transporting material, or an electron transporting material. The heterocyclic compound of Formula 1 having... Agent: Samsung Mobile Display Co., Ltd.

20120097925 - Organic light-emitting device: h

20120097930 - Organic light-emitting display apparatus and method of manufacturing the same: An organic light-emitting display apparatus including a substrate; a black matrix layer formed over the substrate; an insulating layer formed over the black matrix layer; a thin film transistor (TFT) formed over the insulating layer; a pixel electrode connected to the TFT; and an organic layer formed over the pixel... Agent: Samsung Mobile Display Co., Ltd.

20120097935 - Polycyclic dithiophenes: The present invention relates to novel compounds of the formula (I) wherein R1 and R1′ independently of each other are H or a substituent, halogen or SiR6R4R5; R2 and R2′ may be the same or different and are selected from C1-C25alkyl, C3-C12-cycloalkyl, C2-C25alkenyl, C2-C25alkynyl, C4-C25aryl, C5-C25alkylaryl or C5-C25aralkyl, each of... Agent: Basf Se

20120097938 - Polymers comprising structural units which contain alkylalkoxy groups, blends comprising these polymers, and opto-electronic devices comprising these polymers and blends: The present invention relates to polymers comprising structural units which contain alkylalkoxy groups, and blends which comprise the polymers according to the invention. The invention is also directed to the use of the polymers and blends according to the invention in opto-electronic devices and to these devices themselves.... Agent: Merck Patent Gmbh

20120097936 - White organic light emitting device: Provided is a white organic light emitting device including an anode, a cathode and an organic layer disposed therebetween, the organic layer having a structure wherein an arrangement of a green emissive layer and a blue emissive layer is formed on both surfaces of a red emissive layer such that... Agent: Samsung Electronics Co., Ltd.

20120097940 - Display device and method for manufacturing the same: A display device according to an exemplary embodiment includes: gate wires, at least one of the gate wires having a first multi-layered structure including a first transparent conductive layer formed on the substrate and a first metal layer formed on the first transparent conductive layer and at least another one... Agent:

20120097941 - Semiconductor device: A transistor in a display device is expected to have higher withstand voltage, and it is an object to improve the reliability of a transistor which is driven by high voltage or large current. A semiconductor device includes a transistor in which buffer layers are provided between a semiconductor layer... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120097942 - Semiconductor device and method for manufacturing semiconductor device: It is an object of an embodiment of the present invention to reduce leakage current between a source and a drain in a transistor including an oxide semiconductor. As a first gate film in contact with a gate insulating film, a compound conductor which includes indium and nitrogen and whose... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120097943 - Thin film transistor: A TFT including a gate, a gate insulation layer, an oxide semiconductor layer, a translucent layer, a source, and a drain. The gate insulation layer covers the gate. The oxide semiconductor layer is disposed on the gate insulation layer and located above the gate. The oxide semiconductor layer includes an... Agent: Au Optronics Corporation

20120097944 - Test structures for through silicon vias (tsvs) of three dimensional integrated circuit (3dic): A plurality of through silicon vias (TSVs) on a substrate or in a 3 dimensional integrated circuit (3DIC) are chained together. TSVs are chained together to increase the electrical signal. A plurality of test pads are used to enable the testing of the TVSs. One of the test pads is... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120097945 - Polycrystalline metal-based led heat dissipating structure and method for manufacturing the same: A polycrystalline metal-based LED heat dissipating structure includes a composite substrate, an insulated heat conducting layer, printed circuit layer, electric and heat conducting layer, and a polycrystalline metal-based LED. The composite substrate and the printed circuit layer are linked by the insulated heat conducting layer. The printed circuit layer and... Agent:

20120097946 - Photo-detecting device and method of making a photo-detecting device: A photo-detecting device including a plurality of pixels, each including at least one alternate stack of photodiodes and electrically conducting electrodes. Each photodiode includes one intrinsic amorphous semiconductor layer in contact with one doped amorphous semiconductor layer distinct from the amorphous semiconductor layers in other photodiodes, and is arranged between... Agent: Commissariat A L'energie Atomique Et Aux Ene Alt

20120097950 - Semiconductor integrated circuit device and a method of fabricating the same: A method of fabricating a semiconductor integrated circuit includes forming a first dielectric layer on a semiconductor substrate, patterning the first dielectric layer to form a first patterned dielectric layer, forming a non-single crystal seed layer on the first patterned dielectric layer, removing a portion of the seed layer to... Agent: Samsung Electronics Co., Ltd.

20120097948 - Thin film transistor: A thin film transistor includes a substrate, a gate electrode on the substrate, a gate insulating layer covering the gate electrode, a first semiconductor layer and a second semiconductor layer overlapping the gate electrode on the gate insulating layer and separated from each other, a first source electrode and a... Agent:

20120097947 - Thin film transistor and manufacturing method thereof: A thin film transistor includes a substrate; a gate electrode on the substrate; a gate insulating layer covering the gate electrode; a semiconductor layer corresponding to the gate electrode on the gate insulating layer; a protective layer covering the semiconductor layer and the gate insulating layer and having a source... Agent:

20120097949 - Vertical organic field effect transistor and method of its manufacture: An electronic device (100) is presented, being configured for example as a vertical field effect transistor. The device comprises an electrically-conductive perforated patterned structure (102) which is enclosed between a dielectric layer (105) and an active element (106) of the electronic device (100). The electrically-conductive perforated patterned structure (102) comprises... Agent: Technion Research And Development Foundation Ltd.

20120097958 - Active-matrix field emission pixel: A field emission pixel includes a cathode on which a field emitter emitting electrons is formed, an anode on which a phosphor absorbing electrons from the field emitter is formed, and a thin film transistor (TFT) having a source connected to a current source in response to a scan signal,... Agent: Electronics And Telecommunication Research Institute

20120097953 - Display apparatus and method of manufacturing the same: A display apparatus includes a thin film transistor provided on a substrate and a pixel electrically coupled to the thin film transistor. The thin film transistor includes a semiconductor layer on the substrate, a first insulating layer on the semiconductor layer and having a first contact hole and a second... Agent:

20120097954 - Organic light emitting display device: The present invention further relates to an OLED device, including R, G, B, and W subpixels. Specifically, the OLED device comprises a substrate; a thin film transistor (TFT) active layer disposed on the substrate, comprising a gate electrode, a gate insulating layer, an active layer, an interlayer insulating layer, a... Agent:

20120097956 - Organic light emitting display device: An organic light emitting display device includes a substrate; a first electrode layer formed on the substrate; an emission structure layer formed on the first electrode layer; an electron injection layer (EIL) formed immediately on the emission structure layer and comprising a composite layer of LiF:Yb; and a second electrode... Agent: Samsung Mobile Display Co., Ltd.

20120097951 - Organic light emitting display device and manufacturing method thereof: An organic light-emitting display device includes a substrate including a rectangular light-emitting area and a circuit area, the circuit area including a thin film transistor, the light-emitting area including an electroluminescent layer produced by a solution deposition process, the light-emitting area being bounded by a first major side, a second... Agent: Samsung Mobile Display Co., Ltd.

20120097952 - Organic light-emitting display apparatus: An organic light-emitting display apparatus comprises: a substrate in which a pixel region is defined; a thin film transistor (TFT) disposed on the substrate and spaced apart from the pixel region; a planarization pattern covering the TFT and spaced apart from the pixel region; a first electrode electrically connected to... Agent: Samsung Mobile Display Co., Ltd.

20120097957 - Organic light-emitting display device and method of manufacturing the same: An organic light-emitting display device includes: a buffer layer including sequentially stacked materials having different refractive indexes on a substrate; source and drain electrodes on the buffer layer; a first active layer of a thin film transistor between the source and drain electrodes, and a second active layer spaced from... Agent:

20120097960 - Semiconductor device and manufacturing method thereof: A semiconductor device having high operating performance and reliability, and a manufacturing method thereof are provided. An LDD region 207 provided in an n-channel TFT 302 forming a driving circuit enhances the tolerance for hot carrier injection. LDD regions 217-220 provided in an n-channel TFT (pixel TFT) 304 forming a... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120097955 - Thin film transistor and pixel structure having the thin film transistor: A thin film transistor (TFT) and a pixel structure having the TFT are provided. The TFT is configured on a substrate. Besides, the TFT includes a gate, a gate insulation layer, a source, a channel layer, and a drain. The gate insulation layer covers the gate and the substrate. The... Agent: Au Optronics Corporation

20120097959 - Thin film transistor array, method for manufacturing the same, and active matrix type display using the same: One embodiment of the present invention is a thin film transistor array, having an insulating substrate and a stripe-shaped semiconductor layer for a plurality of transistors, the layer extending over the plurality of transistors. Another embodiment of the present invention is an active matrix type display, having the thin film... Agent: Toppan Printing Co., Ltd.

20120097961 - Method of anodizing aluminum using a hard mask and semiconductor device thereof: Methods of anodizing aluminum using a hard mask and related embodiments of semiconductor devices are disclosed herein. Other methods and related embodiments are also disclosed herein.... Agent: Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of

20120097962 - Polysilicon thin film transistor having copper bottom gate structure and method of making the same: Provided is a polysilicon thin film transistor having a bottom gate structure using copper and a method of making the same. The polysilicon thin film transistor includes: a transparent insulation substrate; a seed layer that is formed in the same pattern as that of a gate electrode on the transparent... Agent:

20120097964 - Semiconductor device and manufacturing method thereof: An object is to obtain a semiconductor device with improved characteristics by reducing contact resistance of a semiconductor film with electrodes or wirings, and improving coverage of the semiconductor film and the electrodes or wirings. The present invention relates to a semiconductor device including a gate electrode over a substrate,... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120097963 - Semiconductor device and method of manufacturing the same: A first shape of semiconductor region having on its one side a plurality of sharp convex top-end portions is formed first and a continuous wave laser beam is used for radiation from the above region so as to crystallize the first shape of semiconductor region. A continuous wave laser beam... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120097967 - Organic light-emitting display device and method of manufacturing the same: An organic light-emitting display device includes a buffer layer on a substrate that has a plurality of insulating layers having different refractive indexes, and at least one of the insulating layers have different thicknesses on the same level. The device further includes an active layer of a thin film transistor... Agent:

20120097965 - Thin film transistor and display device using the same: In a thin film transistor and a display device provided with the same, a thin film transistor according to an exemplary embodiment includes: a semiconductor layer including a channel region, a source region, a drain region, a light-doped source region, and a light-doped drain region; a gate electrode overlapping the... Agent:

20120097966 - Thin film transistor, organic light emitting diode (oled) display including the same, and manufacturing methods of them: The present invention relates generally to a thin film transistor, an organic light emitting diode (OLED) display including the same, and manufacturing methods of them. The thin film transistor comprises: a substrate; a gate electrode disposed on the substrate; a gate insulating layer disposed on the gate electrode; a semiconductor... Agent: Samsung Mobile Display Co., Ltd.

20120097970 - Atomic layer deposition encapsulation for power amplifiers in rf circuits: Power amplifiers and methods of coating a protective film of alumina (Al2O3) on the power amplifiers are disclosed herein. The protective film is applied through an atomic layer deposition (ALD) process. The ALD process can deposit very thin layers of alumina on the surface of the power amplifier in a... Agent: Rf Micro Devices, Inc.

20120097971 - Contiguous and virtually contiguous area expansion of semiconductor substrates: Substrates are processed, with a high degree of topography, to produce a variety of semiconductors or other devices and are then stretched out, substantially flat, to achieve a significant increase in surface area. Devices made from a contiguous structure of a single, active crystalline material or from non-contiguous structures of... Agent:

20120097973 - High performance power switch: In one example, we describe a new high performance AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistor (MISHFET), which was fabricated using HfO2 as the surface passivation and gate insulator. The gate and drain leakage currents are drastically reduced to tens of nA, before breakdown. Without field plates, for 10 μm of gate-drain... Agent:

20120097972 - Light emitting device and method for manufacturing same: A method for manufacturing a light emitting device includes forming a multilayer body including a light emitting layer so that a first surface thereof is adjacent to a first surface side of a translucent substrate. A dielectric film on a second surface side opposite to the first surface of the... Agent: Kabushiki Kaisha Toshiba

20120097969 - Light emitting diode chip and manufacturing method thereof: An exemplary LED chip includes a substrate, a buffer layer formed on the substrate and a light emitting layer formed on the buffer layer. The light emitting layer includes an n-type semiconductor layer and a p-type semiconductor layer. A first electrode is electrically connected with one of the n-type semiconductor... Agent: Advanced Optoelectronic Technology, Inc.

20120097968 - Multilayer substrate having gallium nitride layer and method for forming the same: The present invention provides a method for forming a multilayer substrate having a gallium nitride layer, wherein a mesh layer having a plurality of openings is formed on a substrate, and a buffer layer, three aluminum gallium nitride layers with different aluminum concentrations and a gallium nitride layer are formed... Agent: National Chiao Tung University

20120097976 - Light emitting diode chip and method for manufacturing the same: A light emitting diode chip includes an electrically conductive substrate, a reflecting layer disposed on the substrate, a semiconductor structure formed on the reflecting layer, an electrode disposed on the semiconductor structure, and a plurality of slots extending through the semiconductor structure. The semiconductor structure includes a P-type semiconductor layer... Agent: Advanced Optoelectronic Technology, Inc.

20120097975 - Nitride-based semiconductor substrates having hollow member pattern and methods of fabricating the same: A nitride-based semiconductor substrate may includes a plurality of hollow member patterns arranged on a substrate, a nitride-based seed layer formed on the substrate between the plurality of hollow member patterns, and a nitride-based buffer layer on the nitride-based seed layer so as to cover the plurality of hollow member... Agent: Samsung Electronics Co., Ltd.

20120097978 - Photo-semiconductor device and method of manufacturing the same: A photo-semiconductor device comprises a photoconductive semiconductor film provided with electrodes and formed on a second substrate, the semiconductor film being formed by epitaxial growth on a first semiconductor substrate different from the second substrate, the second substrate being also provided with electrodes, the electrodes of the second substrate and... Agent: Canon Kabushiki Kaisha

20120097974 - Power semiconductor device: A method and apparatus for achieving high current gain, and low on-resistance, from a Bipolar Junction Transistor (BJT) in high temperature and high power applications are disclosed. In some embodiments, a thin doped delta layer is inserted at the base emitter junction but inside the base layer. In addition, in... Agent: Universitetssenteret P&#xc5 Kjeller (unik)

20120097977 - Semiconductor device and a method for manufacturing a semiconductor device: A semiconductor device of the present invention has a (110)-plane-orientation silicon substrate and a p channel type field effect transistor formed in a pMIS region. The p channel type field effect transistor includes a gate electrode disposed via a gate insulation film, and source/drain regions disposed inside a trench disposed... Agent: Renesas Electronics Corporation

20120097980 - Silicon carbide insulating gate type semiconductor device and fabrication method thereof: A termination configuration of a silicon carbide insulating gate type semiconductor device includes a semiconductor layer of a first conductivity type having a first main face, a gate electrode, and a source interconnection, as well as a circumferential resurf region. The semiconductor layer includes a body region of a second... Agent: Sumitomo Electric Industries, Ltd.

20120097979 - Structurally robust power switching assembly: A structurally robust power switching assembly, that has a first rigid structural unit, defining a first unit major surface that is patterned to define a plurality of mutually electrically isolated, electrically conductive paths. Also, a similar, second rigid structural unit is spaced apart from the first unit major surface. Finally,... Agent:

20120097981 - Led chip: An LED (light emitting diode) chip includes a substrate, a first conduction layer formed on a top surface of the substrate, and a second conduction layer formed on the first conduction layer. The first conduction layer extends from a bottom surface of the second conduction layer to a circumferential surface... Agent: Foxsemicon Integrated Technology, Inc.

20120097982 - Lighting device: A lighting device including an electroluminescent (EL) material is connected to an external power supply easily and the convenience is improved. In a lighting device having a light-emitting element including an electroluminescence (EL) layer, a housing including a light-emitting element has a terminal electrode electrically connected to the light-emitting element... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120097983 - Re-emitting semiconductor carrier devices for use with leds and methods of manufacture: Re-emitting semiconductor constructions (RSCs) for use with LEDs, and related devices, systems, and methods are disclosed. A method of fabrication includes providing a semiconductor substrate, forming on a first side of the substrate a semiconductor layer stack, attaching a carrier window to the stack, and removing the substrate after the... Agent: 3m Innovative Properties Company

20120097984 - Optical semiconductor device, laser chip and laser module: An optical semiconductor device has a semiconductor substrate, an optical semiconductor region and a heater. The optical semiconductor region is provided on the semiconductor substrate and has a width smaller than that of the semiconductor substrate. The heater is provided on the optical semiconductor region. The optical semiconductor region has... Agent: Eudyna Devices Inc.

20120097988 - Led module: A LED module has a LED chip, LED packaging materials, a metal base circuit board, a power connection cable, a heat sink that also functions as a metal case; and an optional potting material. The LED chip is fixed to the metal base close to the surface of the board.... Agent:

20120097996 - Led package having an array of light emitting cells coupled in series: Disclosed is a light emitting diode (LED) package having an array of light emitting cells coupled in series. The LED package comprises a package body and an LED chip mounted on the package body. The LED chip has an array of light emitting cells coupled in series. Since the LED... Agent: Seoul Semiconductor Co., Ltd.

20120097994 - Light emitting device and method of manufacturing the same: To provide a light emitting device high in reliability with a pixel portion having high definition with a large screen. According to a light emitting device of the present invention, on an insulator (24) provided between pixel electrodes. an auxiliary electrode (21) made of a metal film is formed, whereby... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120097985 - Light emitting diode (led) package and method of fabrication: A light emitting diode (LED) package includes a substrate, a light emitting diode (LED) die mounted to the substrate, a frame on the substrate, a wire bonded to the light emitting diode (LED) die and to the substrate, and a transparent dome configured as a lens encapsulating the light emitting... Agent:

20120097995 - Light-emitting diode array: A method of fabricating a light emitting diode array, comprising: providing a temporary substrate; forming a first light emitting stack and a second light emitting stack on the temporary substrate; forming a first insulating layer covering partial of the first light emitting stack; forming a wire on the first insulating... Agent:

20120097991 - Light-emitting element, light-emitting device, and lighting device: Described is a solid-state light-emitting element, a light-emitting device using the solid-state light-emitting element, and a lighting device using the light-emitting device. The solid-state light-emitting element comprises a member with a low refractive index which has a hemispherical structure on a first surface and an uneven structure on a second... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120097992 - Method of manufacturing organic light emitting display apparatus, and organic light emitting display apparatus manufactured by using the method: A method of manufacturing an organic light emitting display device and an organic light emitting display device manufactured using the method, which are suitable for manufacturing large-sized display devices on a mass scale and can be used for high-definition patterning. The method includes consecutively forming organic layers on a substrate... Agent:

20120097989 - Organic light emitting diode device: An organic light emitting diode device comprises a first electrode, a second electrode facing the first electrode, a first light emitting unit and a second light emitting unit positioned between the first electrode and the second electrode, a charge generation layer positioned between the first light emitting unit and the... Agent: Samsung Mobile Display Co., Ltd.

20120097987 - Organic light emitting diode display: An organic light emitting diode display includes a substrate, a display unit that includes a common power line and a common electrode, an encapsulation substrate that is attached to the substrate by an adhering layer enclosing the display unit and includes a resin matrix and a plurality of carbon fiber.... Agent:

20120097990 - Organic light emitting diode display: An organic light emitting diode (OLED) display according to an exemplary embodiment includes a display substrate on which a plurality of organic light emitting diodes are formed; a conducting material layer contacting one of electrodes included in the organic light emitting diode; an encapsulation substrate facing the display substrate; and... Agent: Samsung Mobile Display Co., Ltd.

20120097993 - Rectifying unit, a light emitting diode device, and the combination thereof: A light emitting diode device includes a substrate; a first conducting terminal and a second conducting terminal receiving the alternative current signal; a first and a third light-emitting diode groups disposed on the substrate including a plurality of light emitting diodes electrically connecting with the first conducting terminal and the... Agent:

20120097986 - Wafer level reflector for led packaging: An optical emitter is fabricated by bonding a Light-Emitting Diode (LED) die to a package wafer, electrically connecting the LED die and the package wafer, forming a phosphor coating over the LED die on the package wafer, molding a lens over the LED die on the package wafer, molding a... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120097997 - Multichip package structure using a constant voltage power supply: A multichip package structure includes a substrate unit, a light-emitting unit, a current-limiting unit, a frame unit and a package unit. The substrate unit includes a first chip-placing region and a second chip-placing region. The light-emitting unit includes a plurality of light-emitting chips electrically connected to the first chip-placing region.... Agent:

20120097998 - White organic light emitting device: A white organic light emitting device which has high color temperature characteristics and no change in color coordinates according to luminance change, includes a first electrode and a second electrode opposite to each other on a substrate, a charge generation layer formed between the first electrode and the second electrode,... Agent:

20120097999 - Chip package: An embodiment of the invention provides a chip package which includes: a substrate having a first surface and a second surface; an optoelectronic device disposed at the first surface; a protection layer located on the second surface of the substrate, wherein the protection layer has an opening; a light shielding... Agent:

20120098020 - Ceramic substrate for mounting a device, ceramic substrate for mounting an led, led lamp, headlight and electronic parts: According to one embodiment, a ceramic substrate for mounting a device is provided. The ceramic substrate includes a through-hole and a recessed portion provided on at least one edge surface thereof.... Agent: Kabushiki Kaisha Toshiba

20120098005 - Led package: An exemplary encapsulation structure for encapsulating an LED chip includes a first encapsulation, a second encapsulation and a transparent resin layer with phosphorous compounds doped therein. The first encapsulation defines a receiving room for receiving the LED chip therein. The second encapsulation defines a receiving space for receiving the first... Agent: Advanced Optoelectronic Technology, Inc.

20120098007 - Led unit having electrochromic element: An LED unit includes an LED and an electrochromic element mounted on the LED. The LED includes a base, a light emitting die mounted on the base, a pair of leads electrically connected to the die and an encapsulant sealing the die. The encapsulant has a first area and a... Agent: Advanced Optoelectronic Technology, Inc.

20120098013 - Light emitting device and manufacturing method of the same: The present invention is directed to a light emitting device structured so as to increase the amount of light which is taken out in a certain direction after emitted from a light emitting element, and a method of manufacturing this light emitting device. An upper end portion of an insulating... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120098018 - Light emitting device package and light unit having the same: Disclosed is an LED package. The LED package includes a package body, a semiconductor light emitting device on the package body and at least one of frames on the package body. At least one of the frames includes a bottom frame on the package body, and at least two sidewall... Agent:

20120098000 - Light emitting diode package: An exemplary light emitting package includes a base, an LED chip mounted on the base, an encapsulant layer encapsulating the LED chip and a phosphor layer located above and separated from the LED chip. The phosphor layer includes a phosphor scattered portion and a clear portion without phosphor therein. An... Agent: Hon Hai Precision Industry Co., Ltd.

20120098003 - Light emitting diode package: An exemplary light emitting diode (LED) package includes a substrate, an LED chip mounted on the substrate, and a wire. The LED chip includes a semiconductor structure and an electrode disposed on the semiconductor structure. The wire electrically connects the electrode of the LED chip to an electrical portion of... Agent: Advanced Optoelectronic Technology, Inc.

20120098004 - Light emitting diode package: An LED package includes a substrate, an LED die and an encapsulation. The substrate includes a supporting surface and a protrusion extending from the supporting surface along a first direction. The protrusion includes a distal end portion extending along a second direction. The first direction and the second direction define... Agent: Advanced Optoelectronic Technology, Inc.

20120098019 - Light emitting diode package having heat dissipating slugs: A light emitting diode package having heat dissipating slugs is provided. The light emitting diode package comprises first and second heat dissipating slugs formed of a conductive material and spaced apart from each other; a package main body coupled to the first and second heat dissipating slugs to support the... Agent: Seoul Semiconductor Co., Ltd.

20120098001 - Light emitting diode package structure: A light emitting diode (LED) package structure includes a substrate, at least one enclosure made of a transparent material, an LED, a first package material, and a second package material. The enclosure is disposed on a surface of the substrate, and forms a configuration area for disposing the LED therein.... Agent: Intematix Technology Center Corporation

20120098006 - Light emitting diode package with photoresist reflector and method of manufacturing: Optical emitters are fabricated by forming and shaping photoresist reflectors on a package wafer using lithography processes, and bonding Light-Emitting Diode (LED) dies to the package wafer.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120098010 - Light emitting element package: A light emitting element package includes a substrate, a light emitting element, and a package member. The substrate includes a first solder pad and a second solder pad. The light emitting element is mounted on the substrate and includes a p-type electrode and an n-type electrode. The package member is... Agent: Advanced Optoelectronic Technology, Inc.

20120098017 - Light emitting module, method of producing light-emitting module, and lighting fixture unit: In a light emitting module, each of a first light wavelength conversion member, a second light wavelength conversion member, and a third light wavelength conversion member converts the wavelength of the light emitted by a semiconductor light emitting element to emit the light within a wavelength range different from the... Agent: Koito Manufacturing Co., Ltd.

20120098015 - Optoelectronic semiconductor component: An optoelectronic semiconductor component includes a housing main body and at least one optoelectronic semiconductor chip mounted on the housing main body. In operation, the optoelectronic semiconductor chip emits primary radiation including an ultraviolet radiation fraction. The semiconductor component also includes a filter medium that absorbs the ultraviolet radiation fraction... Agent: Osram Opto Semiconductors Gmbh

20120098016 - Optoelectronic semiconductor component and method for producing an inorganic optoelectronic semiconductor component: An optoelectronic semiconductor component includes a carrier and at least one semiconductor layer sequence. The semiconductor layer sequence includes at least one active layer. The semiconductor layer sequence is furthermore mounted on the carrier. The semiconductor component furthermore includes a metal mirror located between the carrier and the semiconductor layer... Agent: Osram Opto Semiconductors Gmbh

20120098002 - Organic light emitting device: An organic light emitting device includes first and second electrodes facing each other, and an emission layer disposed between the first and second electrodes. The emission layer is configured to display light having a first color with a first wavelength region. The emission layer includes a host material configured to... Agent:

20120098011 - Organic light emitting diode device: An organic light emitting device is disclosed. An organic light emitting device according to one embodiment of the present invention comprises a reflection layer; an anode disposed on the reflection layer; a first stack disposed on the anode and comprising a first light emission layer; a charge generation layer disposed... Agent:

20120098012 - Organic light emitting diode device: An organic light emitting device is disclosed. An organic light emitting device according to one embodiment of the present invention comprises an anode; a first stack disposed on the anode and incorporating a first light emission layer comprising blue dopants for one host; a charge generation layer disposed on the... Agent:

20120098008 - Organic light emitting diode device and method of manufacturing the same: An organic light emitting diode device includes a substrate, a transparent electrode disposed on the substrate, an emission layer disposed on the transparent electrode, a reflecting electrode disposed on the emission layer, and a gate insulating layer interposed between the substrate and the transparent electrode, the gate insulating layer being... Agent:

20120098014 - Semiconductor light emitting device: According to one embodiment, a semiconductor light-emitting device includes a semiconductor layer with a multi-layer structure including an active layer, and having a first surface and a second surface opposite to the first surface, a plurality of ITO pillars formed on the second surface of the semiconductor layer, the second... Agent: Kabushiki Kaisha Toshiba

20120098009 - Semiconductor light emitting device and manufacturing method thereof: A semiconductor light emitting device includes: a light emission structure in which a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer are sequentially stacked; a first electrode formed on the first conductive semiconductor layer; an insulating layer formed on the second conductive semiconductor layer and... Agent:

20120098021 - Led package: An LED package includes a substrate, an LED chip and an encapsulation. The substrate includes a main plate, and a first soldering pad and a second soldering pad attached to the main plate. The first soldering pad and the second soldering pad are separated from each other. The LED chip... Agent: Advanced Optoelectronic Technology, Inc.

20120098024 - Nitride semiconductor light emitting device with magnetic film: A nitride semiconductor light emitting device including an n-type nitride semiconductor layer, a p-type nitride semiconductor layer, a light emitting semiconductor layer, a first metal pad, a second metal pad, and a first magnetic material layer is provided. The light emitting semiconductor layer is disposed between the n-type nitride semiconductor... Agent: Industrial Technology Research Institute

20120098023 - Nitride semiconductor light-emitting device: A nitride semiconductor light-emitting device includes at least one n-type semiconductor layer, an active layer and at least one p-type semiconductor layer within a rectangle nitride semiconductor region on a substrate. The n-type semiconductor layer has a partial exposed area, a p-side branch electrode integral with a p-side electrode pad... Agent: Sharp Kabushiki Kaisha

20120098025 - Optoelectronic component: An optoelectronic component includes a semiconductor body and a carrier substrate connected to the semiconductor body with a solder joint, wherein the carrier substrate includes first and second apertures, through which first and second electrically conductive connecting layers are guided from a first primary surface of the carrier substrate facing... Agent: Osram Opto Semiconductors Gmbh

20120098022 - Packaging structure and method for oled: The present invention discloses a packaging structure and method for organic light emitting devices, in which the packaging structure comprises a substrate; an OLED device, which disposing on the substrate; a first transparent protection layer, which forming on the OLED device; and a second transparent protection layer, which forming on... Agent: Institute Of Nuclear Energy Research Atomic Energy Council, Executive Yuan

20120098026 - Organic light emitting diode display and method for manufacturing organic light emitting diode display: An organic light emitting diode (OLED) display comprises: a substrate; an organic light emitting element positioned on the substrate; an organic layer covering the organic light emitting element; and an inorganic layer including an outer portion in contact with the substrate and covering the organic layer, and an end positioned... Agent: Samsung Mobile Display Co., Ltd.

20120098027 - Sealed thin-film device, method of and system for repairing a sealing layer applied to a thin-film device: The invention relates to a sealed thin-film device (10, 12, 14), to a method of repairing a sealing layer (20) applied to a thin-film device (30) to produce the sealed thin-film device, to a system (200) for repairing the sealing layer applied to the thin-film device to generate the sealed... Agent: Koninklijke Philips Electronics N.v.

20120098028 - Photoelectric conversion element and manufacturing method thereof: A photoelectric conversion element in accordance with an embodiment includes a photoelectric conversion layer, a cathode electrode, and an anode electrode. The cathode electrode is arranged on one surface of the photoelectric conversion layer and includes monolayer graphene and/or multilayer graphene in which a portion of carbon atoms is substituted... Agent: Kabushiki Kaisha Toshiba

20120098029 - Photonically-activated single-biasfast-switching integrated thyristor: Preferred embodiments of the invention include a thyristor core that is single biased by a source, such as a power source (or a portion thereof) that is being switched through the thyristors. An optically activated transistor that is preferably a minority carrier device is in series with the thyristor core.... Agent: The Board Of Trustees Of The University Of Illinois

20120098030 - Bipolar semiconductor device and manufacturing method: A trench IGBT is disclosed. One embodiment includes an embedded structure arranged above a collector region and selected from a group consisting of a porous semiconductor region, a cavity, and a semiconductor region including additional scattering centers for holes, the embedded structure being arranged below the body contact region such... Agent: Infineon Technologies Austria Ag

20120098031 - Dual-directional silicon controlled rectifier: A Dual-directional Silicon Controlled Rectifier (DSCR) includes a substrate of a first conductivity type, a buried layer formed on the substrate and of a second conductivity type, a first well and a second well formed on the buried layer and of the first conductivity type, a third well formed between... Agent: Feature Integration Technology Inc.

20120098032 - Non-vacuum method for fabrication of a photovoltaic absorber layer: The present invention provides a non-vacuum method of depositing a photovoltaic absorber layer based on electrophoretic deposition of a mixture of nanoparticles with a controlled atomic ratio between the elements. The nanoparticles are first dispersed in a liquid medium to form a colloidal suspension and then electrophoretically deposited onto a... Agent:

20120098034 - Epitaxial growth of crystalline material: A device includes an epitaxially grown crystalline material within an area confined by an insulator. A surface of the crystalline material has a reduced roughness. One example includes obtaining a surface with reduced roughness by creating process parameters which result in the dominant growth component of the crystal to be... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120098033 - Heterostructures comprising crystalline strain relaxation layers: The invention relates to a process for fabricating a heterostructure. This process is noteworthy in that it comprises the following steps: a) a strained crystalline thin film is deposited on, or transferred onto, an intermediate substrate; b) a strain relaxation layer, made of crystalline material capable of being plastically deformed... Agent: Soitec

20120098037 - Device having series-connected high electron mobility transistors and manufacturing method thereof: A manufacturing method of a device having series-connected HEMTs is presented. Transistors are formed on a substrate and integratedly serial-connected as an integrated device by interconnection wires. Therefore, the voltage of the device is the sum of the voltages across each transistors so that the device can have high breakdown... Agent: National Chiao Tung University

20120098036 - Group iii-n hemt with a floating substrate region and a grounded substrate region: The Si substrate of a group III-N HEMT is formed in layers that define a p-n junction which electrically isolates an upper region of the Si substrate from a lower region of the Si substrate. As a result, the upper region of the Si substrate can electrically float, thereby obtaining... Agent:

20120098035 - Group iii-n hemt with an increased buffer breakdown voltage: The buffer breakdown of a group III-N HEMT on a p-type Si substrate is significantly increased by forming an n-well in the p-type Si substrate to lie directly below the metal drain region of the group III-N HEMT. The n-well forms a p-n junction which becomes reverse biased during breakdown,... Agent:

20120098038 - Semiconductor device: A semiconductor device includes a high-side field-effect transistor including a high-side drain electrode, a high-side gate electrode, and a high-side source electrode; and a first low-side field-effect transistor including a first low-side drain electrode, a first low-side gate electrode and a first low-side source electrode, wherein the high-side source electrode... Agent: Fujitsu Semiconductor Limited

20120098039 - Sige heterojunction bipolar transistor having low collector/base capacitance and manufacturing method of the same: A SiGe HBT having low collector-base capacitance is disclosed, which includes: a silicon substrate, including isolation trenches, a collector region situated between the isolation trenches, and lateral trenches; a SiGe base layer formed on the silicon substrate; and an emitter region formed on the SiGe base layer. Each lateral trench... Agent:

20120098040 - Solid state imaging apparatus, method for driving the same and camera using the same: A solid state imaging apparatus includes: a plurality of photoelectric conversion cells each including a plurality of photoelectric sections arranged in an array of at least two rows and two columns; a plurality of floating diffusion sections each being connected to each of ones of the photoelectric sections which are... Agent: Panasonic Corporation

20120098041 - Self-aligned body fully isolated device: A device having a self-aligned body on a first side of a gate is disclosed. The self-aligned body helps to achieve very low channel length for low Rdson. The self-aligned body is isolated, enabling to bias the body at different bias potentials. The device may be configured into a finger... Agent: Globalfoundries Singapore Pte. Ltd.

20120098043 - Semiconductor device having metal gate and manufacturing method thereof: A method of manufacturing a semiconductor device having metal gate includes providing a substrate having a semiconductor device and a contact etch stop layer (CESL) and a dielectric layer covering the semiconductor device formed thereon, wherein the semiconductor device having at least a dummy gate, performing a dummy gate removal... Agent:

20120098042 - Semiconductor device with reduced junction leakage and an associated method of forming such a semiconductor device: Disclosed is a semiconductor device having a p-n junction with reduced junction leakage in the presence of metal silicide defects that extend to the junction and a method of forming the device. Specifically, a semiconductor layer having a p-n junction is formed. A metal silicide layer is formed on the... Agent: International Business Machines Corporation

20120098044 - Solid-state imaging device: Capacitance between a detection capacitor and a reset transistor is the largest among the capacitances between the detection capacitor and transistors placed around the detection capacitor. In order to reduce this capacitance, it is effective to reduce the channel width of the reset transistor. It is possible to reduce the... Agent: Panasonic Corporation

20120098046 - Electrostatic discharge protection device: An ESD protection device is provided. The ESD protection device includes a first group of electrostatic discharge protection devices connected to a first terminal and including at least one of an LORGGR and an HORGGR, and a second group of electrostatic discharge protection devices connected in series to the first... Agent: Bauabtech

20120098045 - Zero temperature coefficient capacitor: A zero temperature coefficient (ZTC) capacitor including a silicon dioxide dielectric layer with a phosphorus density between 1.7×1020 atoms/cm3 and 2.3×1020 atoms/cm3. An integrated circuit containing a ZTC capacitor including a silicon dioxide dielectric layer with a phosphorus density between 1.7×1020 atoms/cm3 and 2.3×1020 atoms/cm3. A process of forming an... Agent: Texas Instruments Incorporated

20120098047 - Gettering agents in memory charge storage structures: Memory cells including a charge storage structure having a gettering agent therein can be useful for non-volatile memory devices. Providing for gettering of oxygen from a charge-storage material of the charge storage structure can facilitate a mitigation of detrimental oxidation of the charge-storage material.... Agent: Micron Technology, Inc.

20120098052 - Minimizing disturbs in dense non volatile memory arrays: A nitride read only memory (NROM) array includes a silicon substrate having trenches therein, a plurality of polysilicon bit lines deposited in the trenches and connecting columns of memory cells, a layer of (oxide nitride oxide) ONO at least within the memory cells and a plurality of polysilicon word lines... Agent:

20120098051 - Nonvolatile memory device and method of forming the same: A nonvolatile memory device and a method of forming the same, the device including a semiconductor substrate; a plurality of gate patterns stacked on the semiconductor substrate; inter-gate dielectric patterns between the gate patterns; active pillars sequentially penetrating the gate patterns and the inter-gate dielectric patterns to contact the semiconductor... Agent:

20120098049 - Three dimensional semiconductor memory devices and methods of fabricating the same: A three dimensional semiconductor memory device has a stacked structure including cell gates stacked therein that are insulated from each other and first string selection gates laterally separated from each other, vertical active patterns extending through the first string selection gates, multi-layered dielectric layers between sidewalls of the vertical active... Agent:

20120098050 - Three-dimensional semiconductor devices: Three-dimensional semiconductor devices may be provided. The devices may include a stack-structure including gate patterns and an insulation pattern. The stack-structure may further include a first portion and a second portion, and the second portion of the stack-structure may have a narrower width than the first portion. The devices may... Agent:

20120098048 - Vertical memory devices and methods of manufacturing the same: A vertical memory device includes a channel, a ground selection line (GSL), word lines and a string selection line (SSL). The channel extends in a first direction substantially perpendicular to a top surface of a substrate, and a thickness of the channel is different according to height. The GSL, the... Agent: Samsung Electronics Co., Ltd.

20120098054 - Reacted conductive gate electrodes and methods of making the same: A semiconductor device and a method for fabricating a semiconductor device involve a semiconductor layer that includes a first material and a second material. The first and second materials can be silicon and germanium. A contact of the device has a portion proximal to the semiconductor layer and a portion... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120098053 - Semiconductor device with vertical transistor and method for fabricating the same: A semiconductor device with a vertical transistor includes a plurality of active pillars; a plurality of vertical gates surrounding sidewalls of the active pillars; a plurality of word lines having exposed sidewalls whose surfaces are higher than the active pillars and connecting the adjacent vertical gates together; and a plurality... Agent:

20120098059 - Direct contact in trench with three-mask shield gate process: A semiconductor substrate may be etched to form trenches with three different widths. A first conductive material is formed at the bottom of the trenches. A second conductive material separated by an insulator is formed over the first conductive material. A first insulator layer is formed on the trenches. A... Agent: Alpha & Omega Semiconductor Incorporated

20120098055 - Power semiconductor devices, structures, and related methods: Power semiconductor devices, and related methods, where majority carrier flow is divided into paralleled flows through two drift regions of opposite conductivity types.... Agent: Maxpower Semiconductor, Inc.

20120098058 - Semiconductor device and associated fabrication method: A semiconductor device and a method for forming the semiconductor device wherein the semiconductor comprises: a trench MOSFET, formed on a semiconductor initial layer, comprising a well region, wherein the semiconductor initial layer has a first conductivity type and wherein the well region has a second conductivity type; an integrated... Agent:

20120098057 - Semiconductor device and method of fabricating the same: Provided are a semiconductor device and a method of fabricating the same. The method includes: forming a trench in a semiconductor substrate of a first conductive type; forming a trench dopant containing layer including a dopant of a second conductive type on a sidewall and a bottom surface of the... Agent: Electronics And Telecommunications Research Institute

20120098056 - Trench device structure and fabrication: A vertical-current-flow device includes a trench which includes an insulated gate and which extends down into first-conductivity-type semiconductor material. A phosphosilicate glass layer is positioned above the insulated gate and a polysilicon layer is positioned above the polysilicate glass layer. Source and body diffusions of opposite conductivity types are positioned... Agent: Maxpower Semiconductor, Inc.

20120098060 - Semiconductor device: A semiconductor device for preventing an outer well from being separated by a trench gate electrode from the well of a cell region while suppressing increase in the gate resistance in which buried gate electrodes extending in a direction overlapping a gate contact region extend only before a gate electrode... Agent: Renesas Electronics Corporation

20120098061 - Structure and method for forming a planar schottky contact: A monolithically integrated trench FET and Schottky diode includes a plurality of trenches extending into a FET region and a Schottky region of a semiconductor layer. A trench in the Schottky region includes a dielectric layer lining the trench sidewalls, and a conductive electrode having a top surface that is... Agent:

20120098062 - Hybrid active-field gap extended drain mos transistor: An integrated circuit includes an extended drain MOS transistor with parallel alternating active gap drift regions and field gap drift regions. The extended drain MOS transistor includes a gate having field plates over the field gap drift regions. The extended drain MOS transistor may be formed in a symmetric nested... Agent: Texas Instruments Incorporated

20120098063 - Dummy gate for a high voltage transistor device: The present disclosure provides a semiconductor device. The semiconductor device includes a first doped region and a second doped region both formed in a substrate. The first and second doped regions are oppositely doped. The semiconductor device includes a first gate formed over the substrate. The first gate overlies a... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120098064 - Semiconductor device: A semiconductor device is disclosed wherein a peripheral region with a high breakdown voltage and high robustness against induced surface charge is manufactured using a process with high mass productivity. The device has n-type drift region and p-type partition region of layer-shape deposited in a vertical direction to one main... Agent: Fuji Electric Co., Ltd.

20120098065 - Low resistance ldmos with reduced gate charge: An integrated circuit containing an MOS transistor with a drain drift region adjacent to the channel region, a field oxide element in the drain region, a first gate section over the channel region and a second gate section over the field oxide element, with a gap between the gate sections... Agent: Texas Instruments Incorporated

20120098066 - Simultaneous formation of finfet and mugfet: A method and structure comprise a field effect transistor structure that includes a first rectangular fin structure position on a substrate. The first rectangular fin structure has a bottom contacting the substrate, a top opposite the bottom, and sides between the top and the bottom. The structure additionally includes a... Agent: International Business Machines Corporation

20120098067 - Structure of high-k metal gate semiconductor transistor: A semiconductor structure is provided. The structure includes an n-type field-effect-transistor (NFET) being formed directly on top of a strained silicon layer, and a p-type field-effect-transistor (PFET) being formed on top of the same stained silicon layer but via a layer of silicon-germanium (SiGe). The strained silicon layer may be... Agent: International Business Machines Corporation

20120098068 - Formation of multi-height mugfet: A method and structure comprise a field effect transistor structure that includes a first rectangular fin structure and a second rectangular fin structure, both positioned on a substrate. The sides of the second rectangular fin structure are parallel to the sides of the first rectangular fin structure. Further, a trench... Agent: International Business Machines Corporation

20120098070 - Integrated circuit having a contact etch stop layer and method of forming the same: A method of forming an integrated circuit structure includes providing a gate stack and a gate spacer on a sidewall of the gate stack. A contact etch stop layer (CESL) is formed overlying the gate spacer and the gate stack. The CESL includes a top portion over the gate stack,... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120098069 - Neutralization capacitance implementation: Neutralization capacitances are commonly employed to compensate for the Miller effect; however, at higher frequencies, the parasitic inductance introduced in the interconnect can affect the neutralization. Here, a layout has been provided where a MOS capacitor is merged with a complementary transistor. By having this merged device, the layout is... Agent: Texas Instruments Incorporated

20120098071 - High sheet resistor in cmos flow: An integrated circuit containing CMOS gates and a counterdoped polysilicon gate material resistor which has a body region that is implanted concurrently with the NSD layers of the NMOS transistors of the CMOS gates and concurrently with the PSD layers of the PMOS transistors of the CMOS gates, and has... Agent: Texas Instruments Incorporated

20120098072 - Semiconductor devices having lightly doped channel impurity regions: Semiconductor devices are provided including a gate across an active region of a substrate; a source region and a drain region in the active region on either side of the gate and spaced apart from each other; a main channel impurity region in the active region between the source and... Agent:

20120098073 - Semiconductor device: A semiconductor device is provided. The semiconductor device includes: a substrate; device isolation regions formed in the substrate; an impurity region formed in a region of the substrate between every two adjacent ones of the device isolation regions; a gate electrode formed on the substrate; first and second interlayer insulating... Agent:

20120098075 - Integrated electronic device for detecting molecules and method of manufacture thereof: An integrated electronic device for detecting gases or biological molecules having a microchip comprising integrated electronics manufactured by the CMOS process. The microchip includes a passivation layer. The passivation layer includes one or more windows configured to cover at least one electronic circuit component of the microchip. The one or... Agent:

20120098074 - Mems device with release aperture: The present disclosure provides a method of fabricating a micro-electro-mechanical systems (MEMS) device. In an embodiment, a method includes providing a substrate including a first sacrificial layer, forming a micro-electro-mechanical systems (MEMS) structure above the first sacrificial layer, and forming a release aperture at substantially a same level above the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120098076 - Acoustic sensor and method of manufacturing the same: Provided is an acoustic sensor. The acoustic sensor includes: a substrate including sidewall portions and a bottom portion extending from a bottom of the sidewall portions; a lower electrode fixed at the substrate and including a concave portion and a convex portion, the concave portion including a first hole on... Agent: Electronics And Telecommunications Research Institute

20120098077 - Writable magnetic element: The invention relates to a writable magnetic element comprising a stack of layers presenting a write magnetic layer, wherein the stack has a central layer of at least one magnetic material presenting magnetization having a magnetization direction that is parallel to the plane of the central layer, which layer is... Agent: Universite Joseph Fourier

20120098078 - Backside illuminated active pixel sensor array, method of manufacturing the same, and backside illuminated image sensor including the same: A backside-illuminated active pixel sensor array in which crosstalk between adjacent pixels is prevented, a method of manufacturing the backside-illuminated active pixel sensor array, and a backside-illuminated image sensor including the backside-illuminated active pixel sensor array are provided. The backside-illuminated active pixel sensor array includes a semiconductor substrate of a... Agent: Samsung Electronics Co., Ltd.

20120098079 - Photoelectric conversion device and solid-state imaging device: A photoelectric conversion device having: a pair of electrodes; a photoelectric conversion layer sandwiched between the pair of electrodes; and at least one electron blocking layer provided between one electrode of the pair of electrodes and the photoelectric conversion layer, wherein the photoelectric conversion layer contains at least one organic... Agent: Fujifilm Corporation

20120098080 - Method and package for an electro-optical semiconductor device: An electro-optical semiconductor device having a semiconductor die including an active region for detecting light which is covered by a cover. The cover has a transparent pane over the active region, and is supported by a standoff. The standoff sits on the die on a perimeter region between the active... Agent: Jabil Circuit, Inc

20120098081 - Solid-state imaging device and electronic equipment: A backside illumination type solid-state imaging device includes stacked semiconductor chips which are formed such that two or more semiconductor chip units are bonded to each other, at least a first semiconductor chip unit is formed with a pixel array and a first multi-layered wiring layer, and a second semiconductor... Agent: Sony Corporation

20120098082 - Schottky rectifier: A semiconductor rectifier includes a semiconductor substrate having a first type of conductivity. A first layer, which is formed on the substrate, has the first type of conductivity and is more lightly doped than the substrate. A second layer having a second type of conductivity is formed on the substrate... Agent: Vishay General Semiconductor LLC

20120098083 - Integrated circuit technology with different device epitaxial layers: A semiconductor die includes a substrate, a first device region and a second device region. The first device region includes an epitaxial layer on the substrate and one or more semiconductor devices of a first type formed in the epitaxial layer of the first device region. The second device region... Agent: Infineon Technolgies Ag

20120098084 - Semiconductor component with isolation trench intersections: A semiconductor component with straight insulation trenches formed in a semiconductor material providing semiconductor areas laterally insulated from each other. Each insulation trench has a uniform width along its longitudinal direction represented by a central line. The semiconductor component has an intersecting area into which at least three of the... Agent:

20120098085 - Semiconductor device and method of manufacturing the same: A semiconductor device, and method of manufacturing the device, having a p type diffusion layer; a V-groove including a bottom surface parallel to the rear surface and exposing the p type diffusion layer and a tapered side surface rising from the bottom surface; a p type semiconductor layer on the... Agent: Fuji Electric Co., Ltd.

20120098086 - Soi substrate and method for manufacturing soi substrate: An SOI substrate and a manufacturing method of the SOI substrate, by which enlargement of the substrate is possible and its productivity can be increased, are provided. A step (A) of cutting a first single crystal silicon substrate to form a second single crystal silicon substrate which has a chip... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120098087 - Forming an extremely thin semiconductor-on-insulator (etsoi) layer: Solutions for forming an extremely thin semiconductor-on-insulator (ETSOI) layer. In one embodiment, a method includes providing a wafer including a plurality of semiconductor-on-insulator (SOI) layer regions separated by at least one shallow trench isolation (STI); amorphizing the plurality of SOI layer regions by implanting the plurality of SOI layer regions... Agent: International Business Machines Corporation

20120098088 - Method of forming isolation structure and semiconductor device with the isolation structure: A semiconductor device includes a substrate and an isolation structure, which includes a trench in the substrate, a lower filling layer at the bottom of the trench, and an upper filling layer on the lower filling layer, wherein the lower filling layer is denser than the upper filling layer, and... Agent: Nanya Technology Corp.

20120098089 - Semiconductor device, mounted substrate to be used in semiconductor device, and manufacturing method of mounted substrate: [Solution] Electrodes 1 for electrical connection and first inductors 2, arranged between the electrodes 1 in a manner neighboring the electrodes 1, for electromagnetic coupling are arranged on one main surface of the semiconductor element 3. On a substrate 5, second inductors 4 for electromagnetically coupling with the first inductors... Agent:

20120098093 - Capacitors and methods of forming capacitors: A method of forming a capacitor includes forming a conductive first capacitor electrode material comprising TiN over a substrate. TiN of the TiN-comprising material is oxidized effective to form conductive TiOxNy having resistivity no greater than 1 ohm·cm over the TiN-comprising material where x is greater than 0 and y... Agent:

20120098090 - High-efficiency power converters with integrated capacitors: A power converter device comprises a substrate, a power die mounted on the substrate, and a capacitor die mounted over the power die in a stacked configuration. The capacitor die is electrically coupled to the power die. A packaging material encapsulates the power die and the capacitor die. An integrated... Agent: Intersil Americas Inc.

20120098094 - Metal capacitor and method of making the same: A metal capacitor structure is disclosed. The metal capacitor structure includes: a dielectric layer having a first region and a second region, a dielectric constant of the dielectric layer in the second region being higher than a dielectric constant of the dielectric layer in the first region; a dual damascene... Agent:

20120098092 - Semiconductor device capacitors including multilayered lower electrodes: A capacitor of a semiconductor device may include a lower electrode on a semiconductor substrate. A dielectric film can cover a surface of the lower electrode and an upper electrode can cover the dielectric film. The lower electrode can be a first conductive pattern that includes a bottom portion and... Agent: Samsung Electronics Co., Ltd.

20120098091 - Semiconductor device substrate and semiconductor device: There is provided a semiconductor device substrate including: a multi-layer wiring layer; a first capacitor pad which is provided on an uppermost layer of the multi-layer wiring layer, and which includes a first power supply pad connected to a power supply layer of the multi-layer wiring layer through a first... Agent: Fujitsu Semiconductor Limited

20120098096 - bipolar transistor: A bipolar transistor comprises at least first and second connected emitter-base (EB) junctions having, respectively, different first and second EB junction depths, and a buried layer (BL) collector having a greater third depth. The emitters and bases corresponding to the different EB junctions are provided during a chain implant. An... Agent: Freescale Semiconductor, Inc.

20120098095 - Bipolar transistor with improved stability: Instability and drift sometimes observed in bipolar transistors, having a portion of the base extending to the transistor surface between the emitter and base contact, can be reduced or eliminated by providing a further doped region of the same conductivity type as the emitter at the transistor surface between the... Agent: Freescale Semiconductor, Inc.

20120098097 - Igbt module and a circuit: An IGBT module is provided. The IGBT module has at least a first individual IGBT with a first softness during switching-off the IGBT module, and at least a second individual IGBT connected in parallel to the at least one first IGBT. The at least one second individual IGBT has a... Agent: Infineon Technologies Austria Ag

20120098098 - Stacked esd clamp with reduced variation in clamp voltage: An integrated circuit containing a stacked bipolar transistor which includes two bipolar transistors connected in series is disclosed. Each bipolar transistor includes a breakdown inducing feature. The breakdown inducing features have reflection symmetry with respect to each other. A process for forming an integrated circuit containing a stacked bipolar transistor... Agent: Texas Instruments Incorporated

20120098099 - Semiconductor device and method of manufacturing the same: Provided are a compound semiconductor device and a method of manufacturing the same. The semiconductor device includes: a substrate including a first region and a second region; a transistor including first to third conductive impurity layers stacked on the substrate of the first region; and a variable capacitance diode spaced... Agent: Electronics And Telecommunications Research Institute

20120098100 - Support ring for supporting a semiconductor wafer composed of monocrystalline silicon during a thermal treatment, method for the thermal treatment of such a semiconductor wafer, and thermally treated semiconductor wafer composed of monocrystalline silicon: A support ring for supporting a monocrystalline silicon semiconductor wafer during a thermal treatment of the semiconductor wafer has outer and inner lateral surfaces and a curved surface extending from the outer lateral surface to the inner lateral surface, this curved surface serving for the placement of the semiconductor wafer.... Agent: Siltronic Ag

20120098101 - Photo-patterned carbon electronics: A system is provided for the manufacture of carbon based electrical components including, an ultraviolet light source; a substrate receiving unit whereby a substrate bearing a first layer of carbon based semiconductor is received and disposed beneath the ultraviolet light source; a mask disposed between the ultraviolet light source and... Agent: Bae Systems Information And Electronic Systems Integration Inc.

20120098102 - Defect reduction of non-polar and semi-polar iii-nitrides with sidewall lateral epitaxial overgrowth (sleo): A method of reducing threading dislocation densities in non-polar such as a-{11-20} plane and m-{1-100} plane or semi-polar such as {10-1n} plane III-Nitrides by employing lateral epitaxial overgrowth from sidewalls of etched template material through a patterned mask. The method includes depositing a patterned mask on a template material such... Agent: The Regents Of The University Of California

20120098103 - Method for forming resist pattern, semiconductor device and production method thereof: A method for producing a semiconductor device includes forming a resist pattern by coating a resist pattern thickening material to cover the surface of the resist pattern, baking the resist pattern thickening material, and developing and separating the resist pattern thickening material, wherein at least one of the coating, the... Agent: Fujitsu Limited

20120098105 - Bond pad for wafer and package for cmos imager: An electronic packaging having at least one bond pad positioned on a chip for effectuating through-wafer connections to an integrated circuit. The electronic package is equipped with an edge seal between the bond pad region and an active circuit region, and includes a crack stop, which is adapted to protect... Agent: International Business Machines Corporation

20120098104 - Shielding techniques for an integrated circuit: Described herein are techniques for forming, during wafer processing, a conductive shielding layer for a chip formed from a wafer. The conductive shielding layer can be formed on multiple sides of a chip prior to dicing the wafer to separate the chip from the wafer. A wafer may be processed... Agent: Stmicroelectronics Pte. Ltd.

20120098106 - Semiconductor device and method of manufacturing the same: When a silicon through electrode is to be formed from a back surface (the surface on which a semiconductor device is not formed) of a silicon substrate, a wide range of an interlayer insulating film made of a Low-k material absorbs moisture, and there is a problem that the electrical... Agent:

20120098107 - Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species: The present invention relates to a process and system for depositing a thin film onto a substrate. One aspect of the invention is depositing a thin film metal oxide layer using atomic layer deposition (ALD).... Agent:

20120098108 - Passivation film for electronic device and method of manufacturing the same: Disclosed are a passivation film for an electronic device having a nitride film formed on a substrate by a plasma-enhanced chemical vapor deposition (PECVD) method using a silicon-containing gas and a nitrogen-containing gas and a plasma-processed film formed by plasma processing a surface of the nitride film by a PECVD... Agent: Samsung Mobile Display Co., Ltd.

20120098109 - Chip package and manufacturing method thereof: A chip package including a shielding layer having a plurality of conductive connectors for better electromagnetic interferences shielding is provided. The conductive connectors can be flexibly arranged within the molding compound for better shielding performance. The shielding layer having the conductive connectors functions as the EMI shield and the shielding... Agent:

20120098110 - Supporting body for a semiconductor component, semiconductor element and method for production of a supporting body: A carrier body for a semiconductor component, in particular for an optoelectronic semiconductor component, is specified. Said carrier body has a connecting layer and a conductor layer, which are connected to one another via main areas facing one another. The connecting layer, the conductor layer or both the connecting layer... Agent: Osram Opto Semicondctors Gmbh

20120098111 - High current capacity inner leads for semiconductor devices, interposer and leadframe: The invention can be used for improving performance of laser diodes, solar cells, microprocessors and other devices. The invention enables to create semiconductor devices and systems comprising several electronic components and having a great area of die, a great number of leads, high operating current and high heat dissipation. This... Agent:

20120098113 - Device with semiconductor die attached to a leadframe: Methods and resulting devices are disclosed related to attaching a die to a leadframe. One such method includes initially bonding a carrier pad which is pre-coated with a thermosetting first adhesive to the leadframe. The carrier pad can be electrically non-conductive. The first adhesive can be raised to its thermosetting... Agent: Analog Devices, Inc.

20120098112 - Lead frame manufactured from low-priced material and not requiring strict process control, semiconductor package including the same, and method of manufacturing the lead frame and the semiconductor package: Provided are a lead frame, a semiconductor package, and a method of manufacturing the lead frame and the semiconductor package. The lead frame includes: a die pad on which a semiconductor chip is installable; a plurality of lead patterns formed around a circumference of the die pad; an insulating organic... Agent: Samsung Techwin Co., Ltd.

20120098114 - Device with mold cap and method thereof: A device including a substrate; at least one semiconductor die on a first side of the substrate; and a mold cap molded on portions of the first side of the substrate and on lateral sides of the at least one semiconductor die. The mold cap is not molded onto a... Agent: Nokia Corporation

20120098115 - Semiconductor device and method of manufacturing the same: A semiconductor device has a substrate, a semiconductor chip mounted on the substrate, an encapsulating body encapsulating the semiconductor chip on the substrate, and a plurality of heat sink plates embedded in the encapsulating body so as to have a surface that is exposed to an exterior of the encapsulating... Agent: Elpida Memory, Inc.

20120098116 - Multi-chip module system with removable socketed modules: A multi-chip module (MCM) includes chip sub-modules that are fabricated as self-contained testable entities. The chip sub-modules plug into respective sockets in a frame of the MCM. Each chip sub-module may be tested before being plugged into the MCM. A chip sub-module may include an IC chip, such as a... Agent: International Business Machines Corporation

20120098117 - Power and thermal design using a common heat sink on top of high thermal conductive resin package: An apparatus and method of manufacture may be provided for a package that can be coupled to a common heat sink without external electrical isolation. The apparatus, for example, can include a semi-conductor die comprising at least one electronic device. The apparatus can also include a frame on which a... Agent: Renesas Technology America, Inc.

20120098118 - Compliant heat spreader for flip chip packaging: An integrated circuit chip package is described. The integrated circuit package comprises a substrate, a chip attached to the substrate, and a heat spreader mounted over the chip for sealing the chip therein. The heat spreader includes a thermally-conductive element having a side opposed to the top of the chip... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120098119 - Semiconductor chip device with liquid thermal interface material: A method of manufacturing is provided that includes providing a semiconductor chip device that has a circuit board and a first semiconductor chip coupled thereto. A lid is placed on the circuit board. The lid includes an opening and an internal cavity. A liquid thermal interface material is placed in... Agent:

20120098120 - Centripetal layout for low stress chip package: A low-stress chip package is disclosed. The package includes two substrates. The first substrate includes an array of first conductive structures in the corner area of the chip, and an array of second conductive structures in the peripheral edge area of the chip. The first and second conductive structures each... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120098128 - Chip structure and process for forming the same: A chip with a metallization structure and an insulating layer with first and second openings over first and second contact points of the metallization structure, a first circuit layer connecting the first and second contact points and comprising a first trace portion, first and second via portions between the first... Agent: Megica Corporation

20120098121 - Conductive feature for semiconductor substrate and method of manufacture: A conductive feature on a semiconductor component is disclosed. A first passivation layer is formed over a substrate. A bond pad is formed over the first passivation layer. A second passivation layer overlies the first passivation layer and the bond pad. The second passivation layer has a first opening overlying... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120098125 - Integrated circuit package and physical layer interface arrangement: An integrated circuit (IC) package includes an IC chip and a package carrier. The IC chip includes a substrate and an IC layered structure configured on an active surface of the substrate. The IC layered structure includes a first physical layer interface and a second physical layer interface. The first... Agent: Via Technologies, Inc.

20120098123 - Molded chip interposer structure and methods: Apparatus and methods for providing a molded chip interposer structure and assembly. A molded chip structure having at least two integrated circuit dies disposed within a mold compound is provided having the die bond pads on the bottom surface; and solder bumps are formed in the openings of a dielectric... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120098127 - Power/ground layout for chips: Embodiments of the present disclosure provide a chip that comprises a base metal layer formed over a first semiconductor die and a first metal layer formed over the base metal layer. The first metal layer includes a plurality of islands configured to route at least one of (i) a ground... Agent:

20120098126 - Semiconductor device and manufacturing method therefor: The joint reliability in flip chip bonding of a semiconductor device is enhanced. Prior to flip chip bonding, flux 9 is applied to the solder bumps 5a for flip chip bonding over a substrate and reflow/cleaning is carried out and then flip chip bonding is carried out. This makes is... Agent: Renesas Electronics Corporation

20120098124 - Semiconductor device having under-bump metallization (ubm) structure and method of forming the same: A semiconductor device has a UBM (under-bump metallization) structure underlying and electrically connected to a solder bump. The UBM structure has a first metallization layer with a first cross-sectional dimension d1, a second metallization layer with a second cross-sectional dimension d2 formed on the first metallization layer, and a third... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120098122 - Wafer level packaging of micro-electro-mechanical systems (mems) and complementary metal-oxide-semiconductor (cmos) substrates: The embodiments of methods and structures for forming through silicon vias a CMOS substrate bonded to a MEMS substrate and a capping substrate provide mechanisms for integrating CMOS and MEMS devices that use less real-estate and are more reliable. The through silicon vias electrically connect to metal-1 level of the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120098130 - Lead-free structures in a semiconductor device: A semiconductor device includes a semiconductor die and lead-free solder bumps disposed on a surface of the semiconductor die. A substrate includes metal layers and dielectric layers. One of the metal layers includes contact pads corresponding to lead-free solder bumps, and one of the dielectric layers is an exterior dielectric... Agent: Xilinx, Inc.

20120098129 - Method of making a multi-chip module having a reduced thickness and related devices: A method of making a multi-chip module may include forming an interconnect layer stack on a sacrificial substrate. The interconnect layer stack may include patterned electrical conductor layers and a dielectric layer between adjacent patterned electrical conductor layers. The method may further include electrically coupling a first integrated circuit (IC)... Agent: Harris Corporation

20120098131 - Nickel silicide film: A nickel alloy sputtering target and a nickel silicide film formed with such a target are provided and enable the formation of a thermally stable silicide (NiSi) film, scarcely causing the aggregation of films or excessive formation of silicides, having low generation of particles upon forming the sputtered film, having... Agent: Jx Nippon Mining & Metals Corporation

20120098132 - Semiconductor device and method of manufacturing the same: A semiconductor device with a stable structure having high capacitance by changing the pillar type storage node structure and a method of manufacturing the same are provided. The method includes forming a sacrificial layer on a semiconductor substrate including a storage node contact plug, etching the sacrificial layer to form... Agent: Hynix Semiconductor Inc.

20120098133 - Structure and metallization process for advanced technology nodes: The problem of poor adherence of a dielectric coating on a patterned metal structure can be solved by forming an adhesion layer on exposed surfaces of such metal structure prior to deposition of such dielectric. According to an embodiment, the invention provides a method to form a self-aligned adhesion layer... Agent: International Business Machines Corporation

20120098134 - Connecting material, semiconductor device and method for manufacturing semiconductor device: Provided is a semiconductor device including a semiconductor element, a frame, and a connecting part which connects the semiconductor element and the frame to each other, in which an interface between the connecting part and the semiconductor element and an interface between the connecting part and the frame respectively have... Agent:

20120098135 - Integrated circuits with backside metalization and production method thereof: An embodiment of an integrated device, including a chip of semiconductor material wherein an integrated circuit is integrated, is proposed; the integrated device includes a set of contact terminals for contacting the integrated circuit. At least one contact terminal of said set of contact terminals includes a contact layer of... Agent: Stmicroelectronics S.r.l.

20120098136 - Hybrid mems rf switch and method of fabricating same: Structures having a hybrid MEMS RF switch and method of fabricating such structures using existing wiring layers of a device is provided. The method of manufacturing a MEMS switch includes forming a forcing electrode from a lower wiring layer of a device and forming a lower electrode from an upper... Agent: International Business Machines Corporation

20120098137 - Element mounting substrate and semiconductor module: Conventional printed circuit boards had a problem of being inferior in heat-radiation characteristic, and metal-core printed circuit boards adopted to improve the heat-radiation characteristic had problems in having low rigidity and a tendency to bend. The ductility of the metal can be obstructed, and the metal protected; by covering substantially... Agent:

20120098138 - Power semiconductor device: A power semiconductor device of the present invention has the power semiconductor elements having back surfaces bonded to the wiring patterns and surface electrodes on surfaces, the cylindrical communication parts having bottom surfaces bonded on the surface electrodes of the power semiconductor elements and/or on the wiring patterns, the transfer... Agent: Mitsubishi Electric Corporation

20120098139 - Vertical memory devices and methods of manufacturing the same: A vertical memory device includes a channel, a ground selection line (GSL), word lines, a string selection line (SSL), and a contact. The channel includes a vertical portion and a horizontal portion. The vertical portion extends in a first direction substantially perpendicular to a top surface of a substrate, and... Agent: Samsung Electronics Co., Ltd.

20120098142 - Electrical contact for a deep buried layer in a semi-conductor device: A semi-conductor device includes at least one deep buried layer with an electrical connection made thereto by an electrical contact. The electrical contact to the deep buried layer is made by formed an opening through the use of a first chemical attack and a second chemical attack after the first... Agent: Stmicroelectronics S.r.l.

20120098140 - Hybrid bonding techniques for multi-layer semiconductor stacks: A circuit arrangement and method utilize hybrid bonding techniques that combine wafer-wafer bonding processes with chip-chip and/or chip-wafer bonding processes to form a multi-layer semiconductor stack, e.g., by bonding together one or more sub-assemblies formed by wafer-wafer bonding together with other sub-assemblies and/or chips using chip-chip and/or chip-wafer bonding processes.... Agent: International Business Machines Corporation

20120098143 - Method for packaging a semiconductor chip, and semiconductor package: A method for packaging a semiconductor chip includes: providing a semiconductor wafer that has an upper surface and includes a plurality of chip regions, each of the chip regions having a semiconductor unit that includes at least one electrical-connecting pad; forming over the upper surface a photoresist layer, followed by... Agent:

20120098141 - Semiconductor device and method for forming the same: A semiconductor device and a method for forming the same are disclosed. The semiconductor device includes a semiconductor substrate including an active region defined by a device isolation film, a bit line contact plug that is coupled to the active region and that includes a first ion implantation region buried... Agent: Hynix Semiconductor Inc.

20120098145 - Semiconductor device and method of forming the same: A semiconductor device includes a chip stacked structure. The chip stacked structure may include, but is not limited to, first and second semiconductor chips. The first semiconductor chip has a first thickness. The second semiconductor chip has a second thickness that is thinner than the first thickness.... Agent: Elpida Memory, Inc.

20120098144 - Vertical electrode structure using trench and method for fabricating the vertical electrode structure: Provided is a vertical electrode structure using a trench and a method of manufacturing the vertical electrode structure. The method of forming a vertical electrode structure using a trench includes steps of: forming the trench on a predetermined region of a semiconductor substrate; and forming electrode layers in predetermined regions... Agent: Korea University Research And Business Foundation

20120098146 - Formation of barrier layer on device using atomic layer deposition: The configuration of one or more barrier layers for encapsulating a device is controlled by setting parameters of atomic layer deposition (ALD). A substrate formed with the device is placed on a susceptor and exposed to multiple cycles of source precursor gas and reactant precursor gas injected by reactors of... Agent: Synos Technology, Inc.

20120098147 - Plasma treatment method: A method for manufacturing a semiconductor device having fluorocarbon layers as insulating layers includes the steps of forming a first fluorocarbon (CFx1) layer using plasma excited by microwave power and forming a second fluorocarbon (CFx2) layer using plasma excited by an RF power.... Agent: Tokyo Electron Limited

20120091417 - Multistate nonvolatile memory elements: Multistate nonvolatile memory elements are provided. The multistate nonvolatile memory elements contain multiple layers. Each layer may be based on a different bistable material. The bistable materials may be resistive switching materials such as resistive switching metal oxides. Optional conductor layers and current steering elements may be connected in series... Agent: Intermolecular, Inc.

20120091415 - Nonvolatile memory device, nonvolatile memory device group, and manufacturing method thereof: A nonvolatile memory device group includes: (A) a first insulating layer; (B) a second insulating layer that has a first concavity and a second concavity communicating with the first concavity and having a width larger than that of the first concavity and that is disposed on the first insulating layer;... Agent: Sony Corporation

20120091416 - Phase change material for a phase change memory device and method for adjusting the resistivity of the material: A phase change material for use in a phase change memory device comprises germanium-antimony-tellurium-indium, wherein the phase change material comprises in total more than 30 at % antimony, preferably 5-16 at % germanium, 30-60 at % antimony, 25-51 at % tellurium, and 2-33% at % indium.... Agent:

20120091414 - Semiconductor device and method for manufacturing the same: According to one embodiment, a semiconductor device includes a plurality of silicon films. The plurality of silicon films are disposed on one plane and are made of polysilicon containing an impurity. A crystal orientation of each of the silicon films is a (311) orientation.... Agent: Kabushiki Kaisha Toshiba

20120091413 - Three dimensional horizontal diode non-volatile memory array and method of making thereof: A non-volatile memory device contains a three dimensional stack of horizontal diodes located in a trench in an insulating material, a plurality of storage elements, a plurality of word lines extending substantially vertically, and a plurality of bit lines. Each of the plurality of bit lines has a first portion... Agent: Sandisk 3d LLC

20120091418 - Bipolar storage elements for use in memory cells and methods of forming the same: In some embodiments, a memory cell is provided that includes (1) a bipolar storage element formed from a metal-insulator-metal (MIM) stack including (a) a first conductive layer; (b) a reversible resistivity switching (RRS) layer formed above the first conductive layer; (c) a metal/metal oxide layer stack formed above the first... Agent:

20120091419 - Memory cells having storage elements that share material layers with steering elements and methods of forming the same: In some embodiments, a memory cell is provided that includes a storage element formed from an MIM stack including (1) a first conductive layer; (2) an RRS layer formed above the first conductive layer; and (3) a second conductive layer formed above the RRS layer, at least one of the... Agent:

20120091421 - Nanostructure quick-switch memristor and method of manufacturing the same: A nanostructure quick-switch memristor includes an upper electrode, a lower electrode and three layers of nanomembrane provided between the upper electrode and the lower electrode. The three layers of nanomembrane consist of an N-type semiconductor layer, a neutral semiconductor layer on the N-type semiconductor layer, and a P-type semiconductor layer... Agent:

20120091424 - Non-volatile memory device and methods for manufacturing the same: A variable and reversible resistive element includes a transition metal oxide layer, a bottom electrode and at least one conductive plug module. The bottom electrode is disposed under the transition metal oxide layer. The conductive plug module is disposed on the transition metal oxide layer. The conductive plug module includes... Agent: Art Talent Industrial Limited

20120091423 - Nonvolatile memory device and manufacturing method thereof: A nonvolatile memory device is disclosed, in which a first electrode, a first material layer having a positive Peltier coefficient, an information storage layer, a second material layer having a negative Peltier coefficient, and a second electrode are laminated.... Agent: Sony Corporation

20120091425 - Nonvolatile memory device and manufacturing method thereof: A nonvolatile memory device (10A) comprises an upper electrode layer (2); a lower electrode layer (4); a resistance variable layer (3) sandwiched between the upper electrode layer (2) and the lower electrode layer (4); and a charge diffusion prevention mask (1A) formed on a portion of the upper electrode layer... Agent:

20120091420 - Nonvolatile resistance change device: According to one embodiment a first variable resistance layer which is arranged between a second electrode and a first electrode and in which a first conductive filament is capable of growing based on metal supplied from the second electrode, and an n-th variable resistance layer which is arranged between an... Agent: Kabushiki Kaisha Toshiba

20120091426 - Resistance-variable element and method for manufacturing the same: A resistance-variable element as disclosed has high reliability, high densification, and good insulating properties. The device provides a resistance-variable element in which a first electrode including a metal primarily containing copper, an oxide film of valve-metal, an ion-conductive layer containing oxygen and a second electrode are laminated in this order.... Agent: Nec Corporation

20120091422 - Semiconductor memory devices having variable resistor and methods of fabricating the same: According to a method of fabricating the semiconductor memory device, a contact plug can be protected while mold openings are formed. A semiconductor memory device may include a mold dielectric layer on an entire surface of a substrate, the substrate including a first region and a second region. A contact... Agent: Samsung Electronics Co., Ltd.

20120091428 - Manufacturing method of memory apparatus, memory device and memory apparatus: A manufacturing method of a memory apparatus in which memory devices each having a memory layer whose resistance value reversibly varies by voltage application between bottom and upper electrodes are formed, includes: forming and shaping a bottom electrode material film into a first linear pattern extending in a first direction;... Agent: Sony Corporation

20120091427 - Multi-level memory arrays with memory cells that employ bipolar storage elements and methods of forming the same: In some embodiments, a memory array is provided that includes (1) a first memory cell having (a) a first conductive line; (b) a first bipolar storage element formed above the first conductive line; and (c) a second conductive line formed above the first bipolar storage element; and (2) a second... Agent:

20120091429 - Resistive memory: A memory device memory device includes a first array of memory structures disposed in rows and columns and constructed over a substrate, each memory structure having a first signal electrode, a second signal electrode, and a resistive layer positioned between the first signal electrode and the second signal electrode.... Agent:

20120091431 - Low temperature synthesis of nanowires in solution: Methods synthesizing nanowires in solution at low temperatures (e.g., about 400° C. or lower) are provided. In the present methods, the nanowires are synthesized by exposing nanowire precursors to metal nanocrystals in a nanowire growth solution comprising a solvent. The metal nanocrystals serve as seed particles that catalyze the growth... Agent:

20120091430 - Nanoelectromechanical systems and methods for making the same: Nanoelectromechanical systems are disclosed that utilize vertically grown or placed nanometer-scale beams. The beams may be configured and arranged for use in a variety of applications, such as batteries, generators, transistors, switching assemblies, and sensors. In some generator applications, nanometer-scale beams may be fixed to a base and grown to... Agent:

20120091432 - Nanowires: An apparatus and a method of manufacturing the apparatus. The apparatus includes a main nanowire and branch nanowires emanating from the main nanowire. The main nanowire may have a first portion and a second portion. The first portion may have a first carrier concentration and the second portion may have... Agent: Nokia Corporation

20120091433 - Light emitting diode and method for making same: A light emitting diode includes a substrate, a number of light emitting units formed on the substrate, and an insulating layer. Each light emitting unit includes a first electrode layer, a number of light emitting nanowires and a second electrode layer. Each light emitting nanowire includes a zinc-oxide-nanowire buffering segment... Agent: Hon Hai Precision Industry Co., Ltd.

20120091434 - Vertical light-emitting device: A vertical light-emitting device includes: a substrate; a first electrode disposed on a bottom surface of the substrate; a reflection layer disposed on a top surface of the substrate; a current spreading layer disposed on the reflection layer and comprising a groove having a width narrower toward a top portion... Agent:

20120091435 - Epitaxial substrate for electronic device and method of producing the same: The epitaxial substrate includes a conductive SiC single crystal substrate, a buffer as an insulating layer on the SiC single crystal substrate, and a main laminate formed by epitaxially growing a plurality of Group III nitride layers on the buffer. Further, the buffer includes at least an initial growth layer... Agent: Dowa Electronics Materials Co., Ltd.

20120091443 - Composition for use in organic device, polymer film, and organic electroluminescent element: A composition for use in an organic device, useful in producing an organic device, such as an organic electroluminescent element, having high operation stability, is a composition for use in an organic device that contains at least two cross-linking compounds, at least two of the cross-linking compounds having different numbers... Agent: Mitsubishi Chemical Corporation

20120091446 - Compound for optoelectronic device, organic light emitting diode including the same and display including the organic light emitting diode: A compound for an organic optoelectronic device, an organic light emitting diode, and a display device, the compound including sequentially combined substituents represented by the following Chemical Formulae 1 to 3:... Agent:

20120091445 - Compound for organic optoelectronic device, organic light emitting diode including the same, and display device including the organic light emitting diode: A compound for an organic optoelectronic device, an organic light emitting diode, and a display device, the compound including substituents represented by the following Chemical Formulae 1 and 2:... Agent:

20120091444 - Display device and method for manufacturing display device: To provide a display device with higher image quality and reliability or a large-sized display device with a large screen at low cost with high productivity. A function layer (such as a coloring layer or a pixel electrode layer) used in the display device is formed by discharging a liquid... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120091447 - Light extracting member: A light extracting member for an organic electroluminescent element, to be provided on a side for extracting light emitted by the organic electroluminescent element, wherein a light extracting surface of the member has a concave-convex structure which is configured such that when comparing an intensity of light that enters the... Agent: Sumitomo Chemical Company, Limited

20120091442 - Light-emitting element, light-emitting device and an electronic device: The present invention provides a light-emitting element including an electron-transporting layer and a hole-transporting layer between a first electrode and a second electrode; and a first layer and a second layer between the electron-transporting layer and the hole-transporting layer, wherein the first layer includes a first organic compound and an... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120091450 - Novel organic compound and organic light-emitting device: e

20120091436 - Ordered organic-organic multilayer growth: An ordered multilayer crystalline organic thin film structure is formed by depositing at least two layers of thin film crystalline organic materials successively wherein the at least two thin film layers are selected to have their surface energies within ±50% of each other, and preferably within ±15% of each other,... Agent: The Regents Of The University Of Michigan

20120091439 - Organic el display panel, display device, and method of manufacturing organic el display panel: A device and method improving luminous efficiency and luminescent color in an organic EL display panel used in electronic devices such as televisions or the like by making it easy to adjust the difference in film thickness between layers of different luminescent colors, such as intermediate layers, when the intermediate... Agent: Panasonic Corporation

20120091438 - Organic electroluminescent element: Provided is an organic EL device, including: an anode; a cathode; and an organic thin-film layer provided between the anode and the cathode, in which: the organic thin-film layer has a light emitting layer containing a host material and a light emitting material, and a hole transporting layer; and the... Agent: Idemitsu Kosan Co., Ltd.

20120091449 - Organic electroluminescent element: An organic electroluminescent element comprising a pair of electrodes composed of an anode and a cathode, a light-emitting layer provided between the electrodes, and a functional layer provided between the light-emitting layer and the anode, wherein the functional layer comprises an n-type semiconductor and a macromolecular compound comprising a repeating... Agent: Sumitomo Chemical Company, Limited

20120091448 - Organic electronic device and method for producing the same: There is provided an organic electronic device that can exhibit a long lifetime while having a facilitated production process. An organic electronic device and a method for producing it, wherein the organic electronic device comprises two or more electrodes facing each other on a substrate, and an organic functional layer... Agent:

20120091440 - Organic light-emitting panel and manufacturing method thereof, and organic display device: A non-light-emitting cell 100c is provided between pixels 100a and 100b. In formation of the light-emitting cell 100a, ink for forming an organic light-emitting layer is dripped into sub-pixels 100a1, 100a2, 100a3 in this order. This also applies to the light-emitting cell 100b. However, such ink is not dripped into... Agent: Panasonic Corporation

20120091441 - Organic light-emitting panel and manufacturing method thereof, and organic display device: A non-light-emitting cell 100c is provided between pixels 100a and 100b. In formation of the pixel 100a, ink for forming an organic light-emitting layer is dripped into sub-pixels 100a1, 100a2, 100a3 in this order. This also applies to the pixel 100b. However, such ink is not dripped into the non-light-emitting... Agent: Panasonic Corporation

20120091437 - Polymer, organic thin film comprising the polymer, and organic thin-film element including same: n

20120091452 - Oxide semiconductor, thin film transistor array substrate and production method thereof, and display device: The present invention provides an oxide semiconductor capable of achieving a thin film transistor having stable transistor characteristics, a thin film transistor having a channel layer formed of the oxide semiconductor and a production method thereof, and a display device equipped with the thin film transistor. The oxide semiconductor of... Agent: Sharp Kabushiki Kaisha

20120091453 - Transparent rectifying metal/metal oxide/semiconductor contact structure and method for the production thereof and use: The invention relates to transparent rectifying contact structures for application in electronic devices, in particular appertaining to optoelectronics, solar technology and sensor technology, and also a method for the production thereof. The transparent rectifying contact structure according to the invention has the following constituents: a) a transparent semiconductor, b) a... Agent: Universitaet Leipzig

20120091451 - Zinc oxide nanostructures and sensors using zinc oxide nanostructures: A method for preparing zinc oxide nanostructures using arc discharge is disclosed. The method comprises the provision of an anode and a cathode in an arc discharge chamber. Current is supplied to the anode and the cathode to establish an arc discharge between the cathode and the anode to vaporise... Agent:

20120091454 - Inline process control structures: A method for process control is disclosed. The method includes performing an etching process on a semiconductor substrate forming a structure and a test structure having a pattern and a releasing mechanism coupled to the pattern; and monitoring the pattern of the test structure to determine whether the etching process... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120091455 - Pad structure having contact bars extending into substrate and wafer having the pad structure: A pad structure in a semiconductor wafer for wafer testing is described. The pad structure includes at least two metal pads connected there-between by a plurality of conductive vias in one or more insulation layers. A plurality of contact bars in contact with the bottom-most metal pad extends substantially vertically... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120091456 - Conformal electromagnetic sensor (for detection of non-destructive imaging and investigation): A conformal electro-magnetic (EM) detector and a method of applying such a detector are provided herein as well as variations thereof Variations include, but are not limited to, single-element, area detectors; an array of multiple active elements.... Agent: Lockheed Martin Corporation

20120091457 - Semiconductor component including a lateral transistor component: A semiconductor arrangement is disclosed. One embodiment includes a first semiconductor layer including a first and second component zone that form a pn-junction or a Schottky-junction. A second semiconductor layer includes a drift control zone adjacent to the second component zone. A dielectric layer separates the first semiconductor layer from... Agent: Infineon Technologies Austria Ag

20120091458 - Semiconductor device with amorphous silicon mas memory cell structure and manufacturing method thereof: A semiconductor device with an amorphous silicon (a-Si) metal-aluminum oxide-semiconductor (MAS) memory cell structure. The device includes a substrate, a dielectric layer overlying the substrate, and one or more source or drain regions embedded in the dielectric layer with a co-planar surface of n-type a-Si and the dielectric layer. Additionally,... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20120091460 - Display device and method for manufacturing the same: A display device includes a substrate; a gate wire including a gate electrode and a first capacitor electrode formed on the substrate; a gate insulating layer formed on the gate wire; a semiconductor layer pattern formed on the gate insulating layer, and including an active region overlapping at least a... Agent: Samsung Mobile Display Co., Ltd.

20120091459 - Organic light emitting display device and manufacturing method thereof: An organic light emitting diode display comprises: a substrate; an active layer formed with a semiconductor material on the substrate; a first insulation layer formed on the semiconductor layer; a pixel electrode formed on the first insulation layer and generated by alternately stacking a plurality of pixel metal layers and... Agent: Samsung Mobile Display Co., Ltd.

20120091462 - Tft monos or sonos memory cell structures: A device having thin-film transistor (TFT) metal-oxide-nitride-oxide-semiconductor (MONOS) or semiconductor-oxide-nitride-oxide-semiconductor (SONOS) memory cell structures includes a substrate, a dielectric layer on the substrate, and one or more source or drain regions being embedded in the dielectric layer. The dielectric layer is associated with a first surface. Each of the one... Agent: Semiconductor Manufacturing International (shanghai ) Corporation

20120091461 - Thin film transistor substrate and method of manufacturing the same: A thin film transistor display substrate and a method of manufacturing the same are provided. The thin film transistor substrate includes a gate electrode formed on a display substrate, an active layer formed on the gate electrode to overlap with the gate electrode and including polycrystalline silicon, a first ohmic... Agent:

20120091464 - Gan leds with improved area and method for making the same: Enlightening device and method for making the same are disclosed. Individual light emitting devices such as LEDs are separated to form individual dies by process in which a first narrow trench cuts the light emitting portion of the device and a second trench cuts the substrate to which the light... Agent:

20120091467 - In-situ defect reduction techniques for nonpolar and semipolar (al, ga, in)n: A method for growing reduced defect density planar gallium nitride (GaN) films is disclosed. The method includes the steps of (a) growing at least one silicon nitride (SiNx) nanomask layer over a GaN template, and (b) growing a thickness of a GaN film on top of the SiNx nanomask layer.... Agent: The Regents Of The University Of California

20120091465 - Method of making bulk ingan substrates and devices thereon: A relaxed epitaxial AlxInyGa(1-x-y)N layer on a substrate having a semipolar surface orientation includes a plurality of misfit dislocations in portions of the thickness of the epitaxial layer to reduce bi-axial strain to a relaxed state.... Agent: Soraa, Inc.

20120091463 - Nitride semiconductor light-emitting element and manufacturing method therefor: A nitride-based semiconductor light-emitting device according to the present invention has a nitride-based semiconductor multilayer structure 50a, which includes: an active layer 32 including an AlaInbGacN crystal layer (where a+b+c=1, a≧0, b≧0 and c≧0); an AldGaeN overflow suppressing layer 36 (where d+e=1, d>0, and e≧0); and an... Agent: Panasonic Corporation

20120091466 - Smart integrated semiconductor light emitting system including nitride based light emitting diodes (led) and application specific integrated circuits (asic): A light emitting diode (LED) system includes a substrate, an application specific integrated circuit (ASIC), and at least one light emitting diode (LED) that includes a Group-III nitride based material such as GaN, InGaN, AlGaN, AlInGaN or other (Ga, In or Al) N-based materials. The light emitting diode (LED) system... Agent: Semileds Optoelectronics Co.

20120091471 - Lightly doped silicon carbide wafer and use thereof in high power devices: A semiconductor device including a drift zone of a first conductivity type serving as a substrate layer having a front side and a back side. A first contact electrode is arranged at the front side of the drift zone. A control region is arranged at the front side and controls... Agent: Norstel Ab

20120091470 - Programmable gate iii-nitride power transistor: A III-nitride semiconductor device which includes a charged floating gate electrode.... Agent: International Rectifier Corporation

20120091468 - Semiconductor device with interposer and method manufacturing same: A semiconductor device includes an interposer mounting a semiconductor chip. The interposer includes a silicon substrate having a recessed region formed on a first surface, a first through via penetrating a first region of the silicon substrate from the first surface to an opposing second surface, an insulator disposed in... Agent: Samsung Electronics Co., Ltd.

20120091469 - Semiconductor devices having shallow junctions: Semiconductor devices are provided including a substrate having a first surface and a second surface recessed from opposite sides of the first surface, a gate pattern formed on the first surface and having a gate insulating layer and a gate electrode, a carbon-doped silicon buffer layer formed on the second... Agent:

20120091472 - Silicon carbide substrate: A first circular surface is provided with a first notch portion having a first shape. A second circular surface is opposite to the first circular surface and is provided with a second notch portion having a second shape. A side surface connects the first circular surface and the second circular... Agent: Sumitomo Electric Industries, Ltd.

20120091473 - Electronic device which performs as light emitting diode and solar cell: An electronic device performing as a light emitting diode and a solar cell, and which comprises: a solar cell unit including a first electrode layer, an energy-level compensation layer formed on the first electrode layer, a photoelectric-conversion layer formed on the energy level compensation layer, and a shared electrode layer... Agent: Gwangju Institute Of Science And Technology

20120091479 - Electrooptic device and electronic apparatus: Pixel electrodes having reflectivity are arranged at a predetermined pitch in a matrix form on an effective display region on an opposed surface of an element substrate. A first conductive pattern which is formed by the same layer as the pixel electrodes is provided on an ineffective display region which... Agent: Seiko Epson Corporation

20120091476 - Light emitting device: A light emitting device includes a light emitting unit and a submount. The light emitting unit has a plurality of light emitting diodes (LEDs), and the submount has a plurality of conductive contacts on a side thereof. The LEDs are coupled to the conductive contacts in various electrical connection manners,... Agent: Intematix Technology Center Corporation

20120091478 - Light emitting device having a pluralilty of light emitting cells and package mounting the same: A light emitting device includes a plurality of light emitting cells which are formed on a substrate and each of which has an N-type semiconductor layer and a P-type semiconductor layer located on a portion of the N-type semiconductor layer. The plurality of light emitting cells are bonded to a... Agent: Seoul Opto Device Co., Ltd.

20120091480 - Light-emitting device: A light-emitting device includes a substrate, a plurality of light-emitting elements mounted on one surface of the substrate, a first glass film provided to one surface of the substrate and having a plurality of apertures that form a light-reflecting frame surrounding the perimeter of each the light-emitting elements, and a... Agent: Stanley Electric Co., Ltd

20120091481 - Light-emitting device and method for manufacturing the same: A light-emitting device includes a light-emitting element and a support substrate. The light-emitting element has an insulating layer and first and second vertical conductors passing through the insulating layer. The support substrate has a substrate part and first and second through electrodes and is disposed on the insulating layer. The... Agent: Napra Co., Ltd.

20120091475 - Method of treating the surface of a soda lime silica glass substrate, surface-treated glass substrate, and device incorporating the same: Certain example embodiments of this invention relate to methods of treating the surface of a soda lime silica glass substrate, e.g., a soda lime silica alkali ion glass substrate, and the resulting surface-treated glass articles. More particularly, certain example embodiments of this invention relate to methods of removing a top... Agent: Guardian Industries Corp.

20120091474 - Novel semiconductor and optoelectronic devices: A light-emitting integrated wafer structure, comprising: three overlying layers, wherein each of the three overlying layers emits light at a different wavelength and wherein at least one of the three overlying layers is transferred to the light-emitting integrated wafer structure using one of atomic species implants assisted cleaving, laser lift-off,... Agent: Nupga Corporation

20120091482 - Organic el element, method for manufacturing the same, and organic el display device: An anode 2 is formed on an element substrate 1. By using a film-forming solution containing a stacking material that forms an organic layer 43, a film is formed on a donor substrate 10 to pattern a transfer layer 11, thereby fabricating a transfer substrate 12. The transfer substrate 12... Agent: Sharp Kabushiki Kaisha

20120091477 - Organic light emitting diode display: An organic light emitting diode (OLED) display comprises: a substrate; a display unit formed on the substrate and including an organic light emitting element; an interception layer positioned at the outside of the display unit on the substrate; and a thin film encapsulation layer which is formed with a stacked... Agent: Samsung Mobile Display Co., Ltd.

20120091483 - Organic light-emitting panel and manufacturing method thereof, and organic display device: A non-light-emitting cell 100c is provided between pixels 100a and 100b. Ink for forming an organic light-emitting layer is dripped substantially simultaneously into sub-pixels 100a1, 100a2, and 100a3 in the pixel 100a and a sub-pixel 100b1 in the pixel 100b. On the other hand, such ink is not dripped into... Agent: Panasonic Corporation

20120091484 - Display device and organic light emitting diode display: A display device includes: a display substrate; a display formed on the display substrate; an encapsulation substrate affixed to the display substrate by an adhering layer surrounding the display, the display substrate including a composite member including a resin matrix and a plurality of carbon fibers and an insulation member... Agent:

20120091485 - Light emitting device: A light emitting diode device comprises a light source and a gas vent device. The gas vent device comprises a base having a collector, wherein a conversion element is located inside the collector. A portion of heat generated from the light source is transferred into thermal energy to gasify the... Agent: Advanced Optoelectronic Technology, Inc.

20120091494 - Composite luminescent material for solid-state sources of white light: Concentration of light storage phosphors can vary within the 10-90 mass % range, the most useful range being 40 to 70 mass %. The material produced is characterized by high brightness, and its illumination engineering parameters fit the absolute black body emission curve with the colour temperature from 2,900 to... Agent:

20120091492 - Light emitting device and method of manufacture: A light emitting device includes a conductive support layer, a light emitting structure layer on the conductive support layer, a first transparent conductive layer and a second transparent conductive layer disposed between the conductive support layer and the light emitting structure layer, and an electrode on the light emitting structure... Agent: Lg Innotek, Co., Ltd.

20120091487 - Light emitting diode package and method for manufacturing the same: A light emitting diode package comprises a substrate and a lens. The substrate comprises two electrodes and a LED chip disposed thereon, wherein the LED chip electrically connects to one of the electrodes via a conductive wire. The connection between the conductive wire and the corresponding electrode is covered by... Agent: Advanced Optoelectronic Technology, Inc.

20120091495 - Light reflecting substrate and process for manufacture thereof: A light reflecting substrate comprises at least: an insulating layer and a metal layer disposed in contact with the insulating layer. The total reflectivity of light in the wavelength range of more than 320 nm and not more than 700 nm is not less than 50% and the total reflectivity... Agent: Fujifilm Corporation

20120091488 - Method for manufacturing a structure with a textured surface for an organic light-emitting diode device, and structure with a textured surface: A method for manufacturing a structure having a textured surface, including a substrate made of mineral glass having a given texture, for an organic-light-emitting-diode device, the method including supplying a rough substrate, having a roughness defined by a roughness parameter Ra ranging from 1 to 5 μm over an analysis... Agent: Saint-gobain Glass France

20120091486 - Phosphor and light emitting device: The present invention provides a phosphor, including a constituent having the formula CapSrqMm-Aa-Bb—Ot—Nn:Zr in which M selected from the group of magnesium, barium, beryllium and zinc; A selected from the group of aluminum, gallium, indium, scandium, yttrium, lanthanum, gadolinium and lutetium; B selected from the group of silicon, germanium, tin,... Agent: Chi-mei Corporation

20120091491 - Radiation-emitting optical component: A radiation-emitting semiconductor component, having a layer structure which includes an active layer which, in operation, emits radiation with a spectral distribution, and electrical contacts for applying a current to the layer structure, includes a coating layer which at least partially surrounds the active layer and holds back a short-wave... Agent: Osram Opto Semiconductors Gmbh

20120091493 - Semiconductor chip assembly with bump/base/ledge heat spreader, dual adhesives and cavity in bump: A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace and dual adhesives. The heat spreader includes a bump, a base and a ledge. The conductive trace includes a pad and a terminal. The semiconductor device is mounted on the bump in a cavity in the... Agent: Bridge Semiconductor Corporation.

20120091490 - Semiconductor light-emitting device: Provided is a light-emitting device including: a nitride semiconductor light-emitting element (402) which radiates optically polarized light; and a light emission control layer (404) which covers the light emission surface of the nitride semiconductor light-emitting element (402) and which contains a resin and non-fluorescent particles dispersed in the resin, in... Agent: Panasonic Corporation

20120091489 - Substrate for mounting light-emitting elements, light-emitting device, and method for manufacturing same: A frame body surrounding a perimeter of each light-emitting element is provided one surface of a substrate. Glass films having apertures are formed on the substrate by glass printing to form the frame body.... Agent: Stanley Electric Co., Ltd.

20120091497 - Light emitting device: Embodiments relate to a light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises: a substrate; a light emitting structure over the substrate, the light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active... Agent:

20120091500 - Light emitting device and method of manufacturing light emitting device: A light emitting device uses a conductive bonding agent in bonding a package and a cap, and the light emitting device is a non-air tight and can be manufactured stably, with an improved yield. A method of manufacturing the light emitting device includes a step of bonding a cap having... Agent: Nichia Corporation

20120091498 - Method for forming a light-emitting case and related light-emitting module: A method for manufacturing a light-emitting case includes forming a flat panel light emitting diode, and covering the flat panel light emitting diode with transparent plastic material. The transparent plastic material has properties of flexibility, high gas-resistance and water-resistance. When the light-emitting case is forced, the shape of the light-emitting... Agent: Silitek Electronic (guangzhou) Co., Ltd.

20120091499 - Semiconductor light-emitting element and process for production thereof: The present invention provides a semiconductor light-emitting element comprising an electrode part excellent in ohmic contact and capable of emitting light from the whole surface. An electrode layer placed on the light-extraction side comprises a metal part and plural openings. The metal part is so continuous that any pair of... Agent: Kabushiki Kaisha Toshiba

20120091496 - Submount and manufacturing method thereof: A submount and a manufacturing method thereof are provided. The submount, on which at least a semiconductor die is disposed, is mounted on a circuit board. The submount includes a substrate made of a conductive material or a semiconducting material, a plurality of conductive film patterns, and an insulating film... Agent:

20120091501 - Low triggering voltage diac structure: In a DIAC-like device that includes an n+ and a p+ region connected to the high voltage node, and an n+ and a p+ region connected to the low voltage node, at least two MOS devices are formed between the n+ and p+ region connected to the high voltage node,... Agent: National Semiconductor Corporation

20120091502 - Semiconductor device having plural insulated gate switching cells and method for designing the same: In a semiconductor device including a plurality of insulated gate switching cells each of which has a gate electrode, an emitter electrode that is commonly provided to cover the plurality of insulated gate switching cells, and a bonding wire connected to the emitter electrode, a gate driving voltage being applied... Agent: Honda Motor Co., Ltd.

20120091503 - High-voltage esd protection device: The present invention discloses a high-voltage ESD protection device including a silicon controlled rectifier and a first PNP transistor. The silicon controlled rectifier includes a high-voltage P-well and N-well; a first N+ and P+ diffusion region are formed in the high-voltage P-well; a second N+ and P+ diffusion region are... Agent:

20120091504 - Method of forming an esd protection device and structure therefor: In one embodiment, a bi-directional ESD device is formed to have a third harmonic at frequencies no less than about one gigahertz wherein the third harmonic has a magnitude that is no greater than about minus thirty five dBm.... Agent:

20120091505 - Semiconductor device: A semiconductor device according to one embodiment includes an element isolation insulating film formed on a substrate, an element region and a dummy pattern region demarcated by the element isolation insulating film on the substrate, a first epitaxial crystal layer formed on the substrate within the element region, and a... Agent: Kabushiki Kaisha Toshiba

20120091506 - Method and structure for pfet junction profile with sige channel: A semiconductor structure including a p-channel field effect transistor (pFET) device located on a surface of a silicon germanium (SiGe) channel is provided in which the junction profile of the source region and the drain region is abrupt. The abrupt source/drain junctions for pFET devices are provided in this disclosure... Agent: International Business Machines Corporation

20120091507 - Structure of heterojunction field effect transistor and a fabrication method thereof: An improved structure of heterojunction field effect transistor (HFET) and a fabrication method thereof are disclosed. The improved HFET structure comprises sequentially a substrate, a channel layer, a spacing layer, a carrier supply layer, a Schottky layer, a Schottky capping layer formed by a higher energy gap material, a tunneling... Agent:

20120091508 - Compound semiconductor device: A compound semiconductor device includes: a compound semiconductor layer; a source electrode; a drain electrode; a gate electrode; a field plate; and a low-conductivity region. The low-conductivity region is arranged within a region immediately below the field plate in a region where the two-dimensional carrier gas layer is formed, and... Agent: Sanken Electric Co., Ltd.

20120091509 - Silicon-germanium heterojunction bipolar transistor: A SiGe HBT is disclosed. A collector region consists of a first ion implantation region in an active area as well as second and third ion implantation regions respectively at bottom of field oxide regions. Each third ion implantation region has a width smaller than that of the field oxide... Agent:

20120091510 - Semiconductor device and manufacturing method thereof, mask for semiconductor manufacture, and optical proximity correction method: An object of the present invention is to reduce processing time and manufacturing cost for a semiconductor device including a logic circuit. To accomplish the above object, an area (114) for forming a logic circuit includes a first area (114b, 170) which is subjected to optical proximity correction with predetermined... Agent: Renesas Electronics Corporation

20120091511 - Multi-fin device by self-aligned castle fin formation: The present disclosure provides a method includes forming a multi-fin device. The method includes forming a patterned mask layer on a semiconductor substrate. The patterned mask layer includes a first opening having a first width W1 and a second opening having a second width W2 less than the first width.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120091512 - Microsystem for analyzing blood: The present disclosure utilizes the MEMS (Micro Electro Mechanical Systems) process and packaging method to produce a microsystem for analyzing blood which is capable of detecting several kinds of ions. The microsystem for analyzing blood has a miniaturized reference electrode, so size of the microsystem can be greatly reduced. The... Agent: Industrial Technology Research Institute

20120091513 - Semiconductor switch device and method of manufacturing semiconductor switch device: A semiconductor switch device and a method of manufacturing the semiconductor switch device are provided. The semiconductor switch device includes semiconductor elements on a single semiconductor substrate. At least one of the semiconductor elements constitutes a switch circuit and at least one other of the semiconductor elements constitutes a logic... Agent: Murata Manufacturing Co., Ltd.

20120091514 - Semiconductor junction diode device and method for manufacturing the same: A semiconductor junction diode device structure and a method for manufacturing the same are provided, where a gate of the diode device structure is directly formed on the substrate, a P-N junction is formed in the semiconductor substrate, a first contact is formed on the gate, and a second contact... Agent:

20120091515 - Semiconductor devices having backside illuminated image sensors: A semiconductor substrate includes a photodiode on a support substrate. An insulating layer is provided between the support substrate and the semiconductor substrate. A first conductive pattern is provided in the insulating layer. A first through electrode penetrates the support substrate to be in contact with the first conductive pattern.... Agent: Samsung Electronics Co., Ltd.

20120091516 - Lateral floating coupled capacitor device termination structures: Voltage termination structures include one or more capacitively coupled trenches, which can be similar to the trenches in the drift regions of the active transistor. The capacitively coupled trenches in the termination regions are arranged with an orientation that is either parallel or perpendicular to the trenches in the active... Agent:

20120091517 - Scratch protection for direct contact sensors: In capacitive sensor circuits where physical contact is required and excess pressure may be inadvertently applied to the sensor surface, aluminum is not sufficiently hard to provide “scratch” protection and may delaminate, causing circuit failure, even if passivation integrity remains intact. Because hard passivation layers alone provide insufficient scratch resistance,... Agent:

20120091518 - Semiconductor device, method for forming the same, and data processing system: A semiconductor device includes a semiconductor substrate having a first groove, a word line in the first groove, and a buried insulating film in the first groove. The buried insulating film covers the word line. The buried insulating film comprises a silicon nitride film.... Agent: Elpida Memory, Inc.

20120091519 - Method and apparatus for improving capacitor capacitance and compatibility: A semiconductor device includes a semiconductor substrate, an isolation structure disposed in the semiconductor substrate, a conductive layer disposed over the isolation structure, a capacitor disposed over the isolation structure, the capacitor including a top electrode, a bottom electrode, and a dielectric disposed between the top electrode and the bottom... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120091520 - Semiconductor device, method for forming the same, and data processing system: A semiconductor device includes a semiconductor substrate, a first interlayer insulating film over the semiconductor substrate, a first interconnect over the first interlayer insulating film, and a via plug penetrating the semiconductor substrate and the first interlayer insulating film. The via plug is coupled to the first interconnect.... Agent: Elpida Memory, Inc.

20120091521 - Memory arrays where a distance between adjacent memory cells at one end of a substantially vertical portion is greater than a distance between adjacent memory cells at an opposing end of the substantially vertical portion and formation thereof: Memory arrays and their formation are disclosed. One such memory array has a string of series-coupled memory cells with a substantially vertical portion. A distance between adjacent memory cells at one end of the substantially vertical portion is greater than a distance between adjacent memory cells at an opposing end... Agent: Micron Technology, Inc.

20120091522 - Semiconductor device and manufacturing method thereof: A semiconductor device includes a first semiconductor layer formed over a substrate, a second semiconductor layer formed over the first semiconductor layer, a source electrode and a drain electrode formed over the second semiconductor layer, an insulating film formed over the second semiconductor layer, a gate electrode formed over the... Agent: Fujitsu Limited

20120091523 - Trench mosfet with trench contact holes and method for fabricating the same: A trench MOSFET with trench contact holes and a method for fabricating the same are disclosed. The MOSFET includes an N type substrate, an N type epitaxial layer on the substrate; a P well region on top of the epitaxial layer; a source region formed on the P well region;... Agent: Will Semiconductor Ltd.

20120091524 - Ldmos device structure and manufacturing method of the same: The present invention discloses an LDMOS device structure, including a MOS transistor cell, wherein an isolation region is formed on each outer side of both a source region and a drain region of the MOS transistor cell; each isolation region includes a plurality of isolation trenches and isolates the MOS... Agent:

20120091525 - Split gate oxides for a laterally diffused metal oxide semiconductor (ldmos): An apparatus is disclosed to increase a breakdown voltage of a semiconductor device. The semiconductor device includes a first heavily doped region to represent a source region. A second heavily doped region represents a drain region of the semiconductor device. A third heavily doped region represents a gate region of... Agent: Broadcom Corporation

20120091526 - Ultra high voltage mos transistor device: An ultra high voltage MOS transistor device includes a substrate having a first conductivity type and a first recess formed thereon, a gate positioned on the first recess, and a pair of source region and drain region having a second conductivity type formed in two sides of the gate, respectively.... Agent:

20120091527 - Lateral double-diffused metal oxide semiconductor (ldmos) transistors: Methods of making, structures, devices, and/or applications for lateral double-diffused metal oxide semiconductor (LDMOS) transistors are disclosed. In one embodiment, an LDMOS transistor can include: (i) an n-doped deep n-well (DNW) region on a substrate; (ii) a gate oxide and a drain oxide between a source region and a drain... Agent: Silergy Technology

20120091528 - Fin-like field effect transistor (finfet) device and method of manufacturing same: A FinFET device and method for fabricating a FinFET device is disclosed. An exemplary method includes providing a semiconductor substrate; forming a fin structure over the semiconductor substrate, the fin structure including a first material portion over the semiconductor substrate and a second material portion over the first material portion;... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120091529 - High voltage resistor: Provided is a semiconductor device. The semiconductor device includes a resistor and a voltage protection device. The resistor has a spiral shape. The resistor has a first portion and a second portion. The voltage protection device includes a first doped region that is electrically coupled to the first portion of... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120091530 - Low trigger voltage electrostatic discharge nfet in triple well cmos technology: An electrostatic discharge (ESD) protection device for an integrated circuit includes a buried layer of a first polarity type formed in a substrate of a second polarity type. A well region of the second polarity type is formed above the buried layer. An FET of the first polarity type is... Agent: International Business Machines Corporation

20120091531 - Flexible integration of logic blocks with transistors of different threshold voltages: An integrated circuit constructed according to an arrangement of logic blocks, with one or more logic blocks including transistors of a different threshold voltage than in other logic blocks. Spacing between neighboring active regions of different threshold voltages is minimized by constraining the angle of implant for the threshold adjust... Agent: Texas Instruments Incorporated

20120091532 - Semiconductor devices including buried-channel-arrray transistors: Provided is a semiconductor device in which a short margin between a storage contact plug and a bit line contact plug may be increased. The device includes a substrate including isolation regions and active regions defined by the isolation regions, gates disposed in the substrate and configured to intersect the... Agent: Samsung Electronics Co., Ltd.

20120091535 - Method and semiconductor device comprising a protection layer for reducing stress relaxation in a dual stress liner approach: By providing a protection layer for suppressing stress relaxation in a tensile-stressed dielectric material during a dual stress liner approach, performance of N-channel transistors may be increased, while nevertheless maintaining a high degree of compatibility with conventional dual stress liner approaches.... Agent: Globalfoundries Inc.

20120091534 - Semiconductor device with strain: A semiconductor device includes: a semiconductor substrate having a p-MOS region; an element isolation region formed in a surface portion of the semiconductor substrate and defining p-MOS active regions in the p-MOS region; a p-MOS gate electrode structure formed above the semiconductor substrate, traversing the p-MOS active region and defining... Agent: Fujitsu Semiconductor Limited

20120091533 - Semiconductor devices including etching stop films: A semiconductor device may include a substrate including an NMOS region and a PMOS region. A gate structure can include a gate pattern and a spacer pattern, where the gate structure is on the substrate. A first etching stop film can be on the substrate in the NMOS region and... Agent: Samsung Electronics Co., Ltd.

20120091536 - Cmos structure and latch-up preventing method of same: A CMOS structure includes a PMOS portion and an NMOS portion isolated from each other via a P-well region disposed next to the PMOS portion and an N-well region disposed between the P-well region and the NMOS portion, an insulation layer overlying at least the N-well region, and a pad... Agent: United Microelectronics Corp.

20120091537 - Semiconductor device: In accordance with an embodiment, a semiconductor device includes an SRAM cell on a substrate. The SRAM cell includes: first and second load transistors each having an n-type source region and a p-type drain region, first and second driver transistors each having a p-type source region and an n-type drain... Agent: Kabushiki Kaisha Toshiba

20120091539 - Facet-free semiconductor device: An exemplary semiconductor device is described, which includes a semiconductor substrate having an active region and an isolation region. The active region has a first edge which interfaces with the isolation region. A gate structure formed on the semiconductor substrate. A spacer element abuts the gate structure and overlies the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120091538 - Finfet and method of fabricating the same: The disclosure relates to a fin field effect transistor (FinFET). An exemplary structure for a FinFET comprises a substrate comprising a top surface; a first insulation region and a second insulation region over the substrate top surface comprising tapered top surfaces; a fin of the substrate extending above the substrate... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120091540 - Strained structure of a p-type field effect transistor: In a p-type field effect transistor, a pair of spacers are formed over the top surface of a substrate. A channel recess cavity includes an indentation in the substrate top surface between the pair of spacers. A gate stack has a bottom portion in the channel recess cavity and a... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120091542 - Methods for the deposition of ternary oxide gate dielectrics and structures formed thereby: Methods and associated structures of forming a microelectronic device are described. Those methods may include introducing a first metal source, a second metal source and an oxygen source into a chamber and then forming a ternary oxide film comprising a first percentage of the first metal, a second percentage of... Agent:

20120091541 - Mixed metal oxides: The present invention relates to a mixed metal oxide of formula SrM1-xTixO3 wherein x is 0>x>1 and M is Hf or Zr, such as a strontium-hafnium-titanium oxide orstrontium-zirconium-titanium oxide, and to a functional device comprising the mixed metal oxide.... Agent: The University Of Liverpool

20120091543 - Electromechanical transducer and method of manufacturing the same: An electromechanical transducer includes multiple elements each including at least one cellular structure, the cellular structure including: a semiconductor substrate, a semiconductor diaphragm, and a supporting portion for supporting the diaphragm so that a gap is formed between one surface of the substrate and the diaphragm. The elements are separated... Agent: Canon Kabushiki Kaisha

20120091544 - Component having a micromechanical microphone structure, and method for its production: A component having a robust, but acoustically sensitive microphone structure is provided and a simple and cost-effective method for its production. This microphone structure includes an acoustically active diaphragm, which functions as deflectable electrode of a microphone capacitor, a stationary, acoustically permeable counter element, which functions as counter electrode of... Agent:

20120091546 - Microphone: A microphone comprises a substrate (20), a microphone membrane (10) defining an acoustic input surface and a backplate (11) supported with respect to the membrane with a fixed spacing between the backplate (11) and the membrane (10). A microphone periphery area comprises parallel corrugations (24) in the membrane (10) and... Agent: Knowles Electronics Asia Pte. Ltd.

20120091545 - Semiconductor component having a micromechanical microphone structure: A simple and cost-effective form of implementing a semiconductor component having a micromechanical microphone structure, including an acoustically active diaphragm as a deflectable electrode of a microphone capacitor, a stationary, acoustically permeable counterelement as a counter electrode of the microphone capacitor, and means for applying a charging voltage between the... Agent:

20120091547 - Resonator and production method thereof: A resonator using the MEMS technology is provided which improves the accuracy of a shape of electrodes so as avoid a short circuit that would otherwise be caused between input and output electrodes to thereby increase the reliability thereof. A resonator includes a substrate 101, an insulation layer 102 formed... Agent: Panasonic Corporation

20120091548 - Ferromagnetic tunnel junction structure, and magneto-resistive element and spintronics device each using same: Disclosed is a ferromagnetic tunnel junction structure which is characterized by having a tunnel barrier layer that comprises a non-magnetic material having a spinel structure. The ferromagnetic tunnel junction structure is also characterized in that the non-magnetic material is substantially MgAl2O4. The ferromagnetic tunnel junction is also characterized in that... Agent:

20120091549 - Formation of embedded micro-lens: Provided is an image sensor device. The image sensor device includes a pixel formed in a substrate. The image sensor device includes a first micro-lens embedded in a transparent layer over the substrate. The first micro-lens has a first upper surface that has an angular tip. The image sensor device... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120091551 - Method of manufacturing a multitude of micro-optoelectronic devices, and micro-optoelectronic device: A wafer stack that is diced to produce a multitude of micro-optoelectronic devices includes a first wafer including a semiconductor material; a second wafer including an optically transparent material; a multitude of light sensor arrangements in the semiconductor material of the first wafer for each of the micro-optical devices; the... Agent:

20120091552 - Optical devices based on non-periodic sub-wavelength gratings: Various embodiments of the present invention are directed to optical devices comprising planar lenses. In one aspect, an optical device includes two or more planar lenses (208,209), and one or more dielectric layers (210-212). Each planar lens includes a non-periodic, sub-wavelength grating layer (1110), and each dielectric layer is disposed... Agent:

20120091550 - Spectroscopy and spectral imaging methods and apparatus: The invention pertains to a new type of standing wave filter in which the detector is located within the cavity, rather than outside the cavity and methods of manufacturing such a filter.... Agent: Aerospace Missions Corporation

20120091553 - Method for detecting the repackaging of an integrated circuit after it has been originally packaged, and corresponding integrated circuit: An integrated circuit includes active circuitry disposed at a surface of a semiconductor body and an interconnect region disposed above the semiconductor body. A thermoelectric material is disposed in an upper portion of the interconnect region away from the semiconductor body. The thermoelectric material is configured to deliver electrical energy... Agent: Stmicroelectronics (rousset) Sas

20120091554 - Semiconductor device and method for manufacturing the same: A method for manufacturing a semiconductor device comprises: etching a semiconductor substrate to form a trench that defines an active region of a line type; burying an insulating film in the trench; and removing a portion of the active region of a line type to form a separated active region.... Agent: Hynix Semiconductor Inc.

20120091555 - Semiconductor device and method of manufacturing the same: A semiconductor device includes a first semiconductor chip including a first surface, a second surface and a first terminal arranged on the first surface, a second semiconductor chip including a first surface, a second surface and a second terminal arranged on the first surface of the second semiconductor chip, a... Agent: Rohm Co., Ltd.

20120091556 - Vertical silicide e-fuse: An apparatus and a method of manufacturing an e-fuse includes a substrate, a patterned gate insulator on the substrate, and a patterned gate conductor on the patterned gate insulator. The patterned gate conductor has sidewalls and a top. A silicide contacts the sidewalls of the patterned gate conductor, the top... Agent: International Business Machines Corporation

20120091557 - Anti-fuse of semiconductor device and method for manufacturing the same: An anti-fuse of a semiconductor device and a method for manufacturing the same are disclosed. In order to achieve stable operation of the anti-fuse, a gate rupture prevention film is formed between a gate pattern and a source/drain junction region and a gate oxide film is formed at both ends... Agent: Hynix Semiconductor Inc.

20120091558 - Shield-modulated tunable inductor device: A semiconductor device is presented here. The semiconductor device includes an integrated inductor formed on a semiconductor substrate, a transistor arrangement formed on the semiconductor substrate to modulate loop current induced by the integrated inductor, dielectric material to insulate the integrated inductor from the transistor arrangement, and a controller coupled... Agent: Advanced Micro Devices, Inc.

20120091559 - Capacitor and method for making same: A system-on-chip (SOC) device comprises a first capacitor in a first region, a second capacitor in a second region, and may further comprise a third capacitor in a third region, and any additional number of capacitors in additional regions. The capacitors may be of different shapes and sizes. A region... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120091561 - Mems devices: A method of manufacturing a MEMS device comprises forming a MEMS device element (12). A sidewall (20) is formed around the MEMS device element, and a sacrificial layer (14) is formed over the device element and within the sidewall. A package cover layer (16) is provided over the sacrificial layer,... Agent: Nxp B.v.

20120091560 - Mim capacitors in semiconductor components: Structures and methods of forming an ideal MIM capacitor are disclosed. The single capacitor includes a first and a second metal structure overlying a substrate, a first dielectric material disposed between a first portion of the first metal structure and a first portion of the second metal structure. A second... Agent: Infineon Techonlogies Ag

20120091563 - Method for insulating a semiconductor material in a trench from a substrate: A semiconductor structure is disclosed. In one embodiment, the trench is formed in a substrate, including an upper portion and a lower portion, the upper portion including a lateral dimension larger than a lateral dimension of the lower portion. The lower portion is lined with a first insulating layer and... Agent: Infineon Technologies Austria Ag

20120091564 - Semiconductor component with marginal region: A semiconductor wafer is disclosed. One embodiment provides at least two semiconductor components each having an active region, and wherein at least one zone composed of porous material is arranged between the active regions of the semiconductor components.... Agent: Infineon Technologies Austria Ag

20120091562 - Semiconductor package: A semiconductor package includes a substrate having an upper surface and a lower surface which faces away from the upper surface, and possessing a recess which is defined on the upper surface; and a semiconductor chip mounted to the upper surface of the substrate, having one surface which faces the... Agent: Hynix Semiconductor Inc.

20120091565 - Semiconductor integrated circuit device and process for manufacturing the same: A semiconductor IC includes grooves formed in a substrate to define a first dummy region and second dummy regions formed at a scribing area, and third dummy regions and a fourth dummy region formed at a product area. A width of the first dummy region is greater than widths of... Agent:

20120091566 - Semiconductor apparatus and method of fabrication for a semiconductor apparatus: The invention relates to a semiconductor apparatus and a method of fabrication for a semiconductor apparatus, whereby the semiconductor apparatus includes a semiconductor layer and a passivation layer arranged on a surface of the semiconductor layer and serving for passivating the semiconductor layer surface, whereby the passivation layer comprises a... Agent: Q-cells Se

20120091567 - Semiconductor die and method of forming noise absorbing regions between thvs in peripheral region of the die: A semiconductor wafer has a plurality of semiconductor die. A peripheral region is formed around the die. An insulating material is formed in the peripheral region. A portion of the insulating material is removed to form a through hole via (THV). A conductive material is deposited in the THV to... Agent: Stats Chippac, Ltd.

20120091568 - Mixed wire semiconductor lead frame package: One embodiment includes an encapsulated semiconductor package having a lead frame with die pad surrounded by a plurality of first and second leadfingers. A semiconductor chip including chip contact pads on its upper active surface is attached to the die pad. A plurality of first bond wires, incoluding a first... Agent: Infineon Technologies Ag

20120091570 - Chip package structure and chip packaging method: A chip packaging method includes the steps of: attaching a first tape to a metal plate; patterning the metal plate to form a plurality of terminal pads and a plurality of leads, wherein the plurality of terminal pads and the plurality of leads are disposed on two opposite sides of... Agent: Chipmos Technologies Inc.

20120091569 - Leadframe package structure and manufacturing method thereof: The package structure includes a metal sheet having a first central block, a plurality of first metal blocks, a second central block and a plurality of second metal blocks, a first finish layer and a second finish layer, at least a chip disposed on the metal sheet and a package... Agent: Advanced Semiconductor Engineering, Inc.

20120091571 - Semiconductor device: A semiconductor device of the present invention includes a resin package, a semiconductor chip sealed in the resin package, and having first and second pads on a front surface, a lead integrated island sealed in the resin package, to one surface of which a back surface of the semiconductor chip... Agent:

20120091572 - Semiconductor package and implementation structure of semiconductor package: The semiconductor package includes a package wiring board having an element housing recessed portion on its top surface to house a semiconductor element; multiple side electrodes which are arranged on the outer side surface of the package wiring board and soldered to multiple motherboard electrodes arranged on a motherboard; a... Agent: Mitsubishi Electric Corporation

20120091573 - Semiconductor device: Provided is a semiconductor device including a heat dissipating fin; an insulating sheet bonded to an upper surface of the heat dissipating fin, with a part of the upper surface being exposed; a heat spreader located on the insulating sheet; a power element located on the heat spreader; and a... Agent: Mitsubishi Electric Corporation

20120091574 - Conductive pillar structure: The invention relates to a bump structure of a semiconductor device. An exemplary structure for a semiconductor device comprises a substrate; a contact pad over the substrate; a passivation layer extending over the substrate having an opening over the contact pad; and a conductive pillar over the opening of the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120091577 - Copper pillar bump with cobalt-containing sidewall protection: An integrated circuit device includes a Cu pillar and a solder layer overlying the Cu pillar. A Co-containing metallization layer is formed to cover the Cu pillar and the solder layer, and then a thermally reflow process is performed to form a solder bump and drive the Co element into... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120091582 - Microelectronic assemblies having compliancy and methods therefor: A microelectronic assembly is disclosed that includes a semiconductor wafer with contacts, compliant bumps of dielectric material overlying the first surface of the semiconductor wafer, and a dielectric layer overlying the first surface of the semiconductor wafer and edges of the compliant bumps. The compliant bumps have planar top surfaces... Agent: Tessera, Inc.

20120091581 - Package unit and stacking structure thereof: A package unit and a stacking structure thereof are provided. The package unit includes a substrate, a first patterned circuit layer, a first conductive pillar, a semiconductor element, an insulation layer, a second conductive pillar, a third conductive pillar, a second patterned circuit layer and a conductive bump. The first... Agent: Industrial Technology Research Institute

20120091578 - Semiconductor chip having different pad width to ubm width ratios and method of manufacturing the same: The present application describes an semiconductor chip having a substrate, a first conductive pad formed over the substrate, a second conductive pad formed over the substrate and positioned farther from a geometric center of the semiconductor chip than the first conductive pad, a first under bump metallurgy (UBM) structure formed... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120091583 - Semiconductor device and method of manufacturing the same: In a semiconductor device in which a plurality of semiconductor chips are stacked, performance is enhanced without deteriorating productivity. The semiconductor device has a plurality of elements, an interlayer insulating film, a pad, and a bump electrode electrically connected with the pad sequentially formed on a main surface of a... Agent:

20120091580 - Semiconductor devices and methods of fabricating the same: Provided is a semiconductor device. The semiconductor device may include a first semiconductor chip that includes a first through silicon via having a first protrusion height and a second through silicon via having a second protrusion height greater than the first protrusion height which are penetrating at least a portion... Agent: Samsung Electronics Co., Ltd.

20120091575 - Semiconductor package and method for making the same: The present invention relates to a semiconductor package and a method for making the same. The semiconductor package includes a substrate, at least one first chip, a dielectric layer and at least one second chip. The first chip is attached and electrically connected to the substrate. The first chip includes... Agent:

20120091579 - Semiconductor packages and methods of fabricating the same: A semiconductor package includes a wiring board including an upper connection pad provided on a first surface and a lower connection pad provided on a second surface opposite to the first surface, a semiconductor chip having a bonding pad area in which a bonding pad is provided and an adhesive... Agent: Samsung Electronics Co., Ltd.

20120091576 - Under-bump metallization (ubm) structure and method of forming the same: An under-bump metallization (UBM) structure in a semiconductor device includes a copper layer, a nickel layer, and a Cu—Ni—Sn intermetallic compound (IMC) layer between the copper layer and the nickel layer.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120091584 - Bump for semiconductor package, semiconductor package having bump, and stacked semiconductor package: A bump for a semiconductor package includes: a first bump formed on a semiconductor chip and having at least two land parts and a connection part which connects the land parts and has a line width smaller than the land parts; and a second bump formed on the first bump... Agent: Hynix Semiconductor Inc.

20120091585 - Laser release process for very thin si-carrier build: A laser release and glass chip removal process for a integrated circuit module avoiding carrier edge cracking is provided.... Agent: International Business Machines Corporation

20120091586 - Conformal coating of highly structured surfaces: Method of applying a conformal coating to a highly structured substrate and devices made by the disclosed methods are disclosed. An example method includes the deposition of a substantially contiguous layer of a material upon a highly structured surface within a deposition process chamber. The highly structured surface may be... Agent: Alliance For Sustainable Energy, LLC

20120091587 - Method for fabrication of a semiconductor device and structure: A 3D IC based system comprising a first semiconductor layer comprising first transistors, wherein the first transistors are interconnected by at least one metal layer comprising aluminum or copper; a second mono-crystallized semiconductor layer comprising second transistors and overlaying the metal layer; wherein the second mono-crystallized semiconductor layer thickness is... Agent:

20120091588 - Barrier layer, film forming method, and processing system: There is provided a film forming method for forming a film on a target object having thereon an insulating layer 1 that is made of a low-k film and having a recess 2 whose bottom surface is exposed to a metallic layer 3. The film forming method includes forming a... Agent: Tokyo Electron Limited

20120091589 - Method to electrodeposit nickel on silicon for forming controllable nickel silicide: The present disclosure relates to an improved method of providing a Ni silicide metal contact on a silicon surface by electrodepositing a Ni film on a silicon substrate. The improved method results in a controllable silicide formation wherein the silicide has a uniform thickness. The metal contacts may be incorporated... Agent: International Business Machines Corporation

20120091590 - Electroless deposition of platinum on copper: Embodiments of the current invention describe a method of plating platinum selectively on a copper film using a self-initiated electroless process. In particular, platinum films are plated onto very thin copper films having a thickness of less than 300 angstroms. The electroless plating solution and the resulting structure are also... Agent: Intermolecular, Inc.

20120091591 - Display device and sputtering target for producing the same: A display device in which an Al alloy film and a conductive oxide film are directly connected without interposition of refractory metal and some or all of Al alloy components deposit or are concentrated at the interface of contact between the Al alloy film and the conductive oxide film. The... Agent: Kabushiki Kaisha Kobe Seiko Sho (kobe Steel, Ltd)

20120091592 - Double patterning technology using single-patterning-spacer-technique: A method of forming an integrated circuit structure includes forming a first and a second plurality of tracks parallel to a first direction and on a wafer representation. The first and the second plurality of tracks are allocated in an alternating pattern. A first plurality of patterns is laid out... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120091594 - Method of producing a chip package, and chip package: A method of producing a chip package includes providing a substrate comprising a first recess having a recess bottom and recess side walls. A chip comprising a chip backside is introduced into the recess such that the chip does not protrude from the recess and such that a gap remains... Agent:

20120091593 - Structure and method for simultaneously forming a through silicon via and a deep trench structure: A through silicon via (TSV) and a deep trench capacitor (DTCap) or a deep trench isolation (DTI) are simultaneously formed on the same substrate by a single mask and a single reactive ion etching (RIE). The TSV trench is wider and deeper that the DTCap or DTI trench. The TSV... Agent: International Business Machines Corporation

20120091596 - Chip-to-chip multi-signaling communication system with common conductive layer: A chip-to-chip multi-signaling communication system with common conductive layer, which comprises a first chip, a second chip, and a common conductive layer, is disclosed. The first chip has at least a first metal pad and a second metal pad. The second chip has at least a first metal pad and... Agent:

20120091595 - Layered integrated circuit apparatus: A device having layered integrated circuit (IC) chips is provided. The chip comprises notches, conductive area, apertures, and routing pool. A conductive material is set in the apertures. The second chip is layered on the first chip. The notches of the second chip are corresponding to the first conducting area... Agent: Mao Bang Electronic Co., Ltd.

20120091597 - Stacked semiconductor package, semiconductor device including the stacked semiconductor package and method of manufacturing the stacked semiconductor package: A stacked semiconductor package has a first semiconductor package including a first package substrate and a first semiconductor chip mounted on the first package substrate, a second semiconductor package including a second package substrate and a second semiconductor chip mounted on the second package substrate, and a plurality of connections... Agent: Samsung Electronics Co., Ltd.

20120091598 - Handling layer for transparent substrate: A device is provided which includes a transparent substrate. An opaque layer is disposed on the transparent substrate. A conductive layer disposed on the opaque layer. The opaque layer and the conductive layer form a handling layer, which may be used to detect and/or align the transparent wafer during fabrication... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120085985 - Electrically actuated device: An electrically actuated device includes a reactive metal layer, a first electrode established in contact with the reactive metal layer, an insulating material layer established in contact with the first electrode or the reactive metal layer, an active region established on the insulating material layer, and a second electrode established... Agent:

20120085986 - Gallium nitride-based compound semiconductor light-emitting diode: The light-emitting diode element of this invention includes: an n-type GaN substrate (7), of which the principal surface (7a) is an m plane; and a multilayer structure on the principal surface (7a) of the substrate (7), which includes an n-type semiconductor layer (2), an active layer (3) on a first... Agent: Panasonic Corporation

20120085987 - Light emitting device: A light emitting device is provided, which includes a light-emitting structure having an active layer and a magnetic material. The active layer includes at least one quantum well structure, and a thickness of at least one of the quantum well structure is greater than or substantially equal to 1.2 nm... Agent: Industrial Technology Research Institute

20120085988 - Light-emitting diode device and manufacturing method thereof: A light-emitting diode (LED) device includes a substrate, an epitaxial layer, a first electrode and a second electrode. The epitaxial layer is disposed on the substrate. The first electrode is disposed to the epitaxial layer and the second electrode is disposed on the epitaxial layer, and a first conductive finger... Agent:

20120085989 - Light-emitting semiconductor device: A semiconductor light-emitting device includes a conductive substrate, a light-emitting structure layer, a metallic reflective layer, a transparent conductive layer, a first patterned dielectric layer, and a second patterned dielectric layer. The light-emitting structure layer, the transparent conductive layer, the metallic reflective layer, and the conductive substrate are sequentially arranged.... Agent: Huga Optotech Inc.

20120085990 - Superlattice quantum well infrared detector having exposed layers: In at least one embodiment, an infrared (IR) detector is provided. The IR detector comprises a thermal sensing element that includes an absorber that is formed of a superlattice quantum well structure. The superlattice quantum well structure includes a first layer and a second layer, the first layer being arranged... Agent: Ud Holdings, LLC.

20120085991 - Graphene nanoribbons, method of fabrication and their use in electronic devices: The present disclosure provides a semiconductor structure including a nanoribbon-containing layer of alternating graphene nanoribbons separated by alternating insulating ribbons. The alternating graphene nanoribbons are parallel to a surface of an underlying substrate and, in some embodiments, might be oriented along crystallographic directions of the substrate. The alternating insulating ribbons... Agent: International Business Machines Corporation

20120085992 - Furan conjugated polymers useful for photovoltaic applications: The present invention provides for a polymer comprising a π-conjugated backbone comprising a furan. The polymer has a narrow or low band gap and/or is solution processable. In some embodiments, the polymer is PDPP2FT or PDPP3F. The present invention also provides for a device comprising the polymer, such as a... Agent: The Regents Of The University Of California

20120085995 - Material for organic electroluminescence device and organic electroluminescence device using the same: Provided are an organic electroluminescence device, which: shows high luminous efficiency; is free of any pixel defect; and has a long lifetime, and a material for an organic electroluminescence device for realizing the device. The material for an organic electroluminescence device is a compound of a specific structure having a... Agent: Idemitsu Kosan Co., Ltd.

20120085997 - Organic electroluminescent element, display device, illuminating device and condensed polycyclic heterocyclic compound: Disclosed is an organic electroluminescent element which is characterized in that constituent layers including at least a phosphorescent light-emitting layer are provided between a pair of electrodes, and at least one of the constituent layers contains a compound represented by general formula (1). (In the formula, A1, A2 and A3... Agent: Konica Minolta Holdings, Inc.

20120085996 - Organic light-emitting device: An organic light-emitting device includes a first electrode, a second electrode, and a light-emitting layer disposed between the first and second electrodes. The light-emitting layer contains an organic compound emitting photoluminescent light with a peak wavelength of 430 to 480 nm. The organic compound has a profile factor of 0.02... Agent: Canon Kabushiki Kaisha

20120085994 - Organic light-emitting materials and devices: An electroluminescent polymer comprising light-emissive repeat units and a non-emissive polycyclic aromatic hydrocarbon unit with greater than 12 aromatic sp2 hybridized carbon atoms, wherein the non-emissive polycyclic aromatic hydrocarbon unit comprises a structural unit having formula I:... Agent: Cambridge Display Technology Limited

20120085993 - Semiconducting polymers and optoelectronic devices incorporating same: Disclosed are polymeric compounds based upon a head-to-head (H—H) alkylthio-substituted bithiophene repeating units (e.g., 3,3′-bis(tetradecylthio)-2,2′-bithiophene). Such compounds can exhibit desirable electronic properties and possess processing advantages including solution-processability and/or good stability at ambient conditions.... Agent:

20120086001 - Method for production of zinc oxide single crystals: The disclosed subject matter includes a method of producing zinc oxide (ZnO) single crystals in an enclosure. The ZnO single crystals have a low concentration of lithium and hydrogen impurities.... Agent: Fairfield Crystal Technology, LLC

20120086002 - Thermally labile precursor compounds for improving the interparticulate contact sites and for filling the interstices in semiconductive metal oxide particle layers: wherein the at least one precursor compound of the at least one semiconductive metal oxide in step (B) is selected from the group consisting of carboxylates of mono-, di- or polycarboxylic acids having at least three carbon atoms or derivatives of mono-, di- or polycarboxylic acids, alkoxides, hydroxides, semicarbazides, carbamates,... Agent: Basf Se

20120086000 - Thin film element, semiconductor device, and method for manufacturing the same: An object is to provide a method for manufacturing a semiconductor device without exposing a specific layer to moisture or the like at all. A thin film element is manufactured in such a manner that a first film, a second film, and a third film are stacked in this order;... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120085998 - Transistors and electronic devices including the same: Example embodiments disclose transistors and electronic devices including the transistors. A transistor may include a charge blocking layer between a gate insulating layer and a gate. An energy barrier between the gate insulating layer and the gate may be increased by the charge blocking layer. The transistor may be an... Agent:

20120085999 - Transistors, methods of manufacturing the same, and electronic devices including transistors: Example embodiments disclose transistors, methods of manufacturing the same, and electronic devices including transistors. An active layer of a transistor may include a plurality of material layers (oxide layers) with different energy band gaps. The active layer may include a channel layer and a photo sensing layer. The photo sensing... Agent: Samsung Electronics Co., Ltd.

20120086004 - Elastic encapsulated carbon nanotube based electrical contacts: Contacts of an electrical device can be made of carbon nanotube columns. Contact tips can be disposed at ends of the columns. The contact tips can be made of an electrically conductive paste applied to the ends of the columns and cured (e.g., hardened). The paste can be applied, cured,... Agent: Formfactor, Inc.

20120086003 - Semiconductor device and test system for the semiconductor device: A semiconductor package including a stress mitigation unit that mitigates stress to the semiconductor chip. The semiconductor package includes a substrate, a semiconductor chip on the substrate, an encapsulation member formed on the substrate and covering the first semiconductor chip, and the stress mitigation unit mitigating stress from a circumference... Agent:

20120086005 - Photoelectric conversion device and manufacturing method thereof: A photoelectric conversion device including a single crystal silicon substrate; a first amorphous silicon layer in contact with a surface (a light-receiving surface) of the single crystal silicon substrate; a first polarity (p-type) impurity diffusion layer in contact with the first amorphous silicon layer; a second amorphous silicon layer in... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120086007 - Pin structures including intrinsic gallium arsenide, devices incorporating the same, and related methods: Provided herein are PIN structures including a layer of amorphous n-type silicon, a layer of intrinsic GaAs disposed over the layer of amorphous n-type silicon, and a layer of amorphous p-type silicon disposed over the layer of intrinsic GaAs. The layer of intrinsic GaAs may be engineered by the disclosed... Agent: The University Of Utah Research Foundation

20120086006 - Semiconductor device: Techniques are provided for obtaining a photoelectric conversion device having a favorable spectral sensitivity characteristic and reduced variation in output current without a contamination substance mixed into a photoelectric conversion layer or a transistor, and for obtaining a highly reliable semiconductor device including a photoelectric conversion device. A semiconductor device... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120086008 - Field-effect transistor, processes for producing the same, and electronic device using the same: A field-effect transistor at least comprising a substrate, a semiconductor layer, a source electrode, and a drain electrode is produced by forming the source electrode and/or the drain electrode so that the source electrode and/or the drain electrode has a taper shape in a cross-section which is parallel with a... Agent: Mitsubishi Chemical Corporation

20120086009 - Array substrate for fringe field switching mode liquid crystal display device and method of manufacturing the same: A method of manufacturing an array substrate for an FFS mode LCD device includes forming a gate line and a gate electrode on a substrate, forming a pixel electrode in the pixel region, forming a gate insulating layer on the gate line, the gate electrode and the pixel electrode, forming... Agent:

20120086011 - Display panel and method for manufacturing the same: A display panel includes a substrate having a display area and a blank area. The blank area includes at least one of a non-metal line region and a metal-line region. The non-metal line region includes a plurality of insulating patterns and a first conductive pattern layer formed on the substrate.... Agent: Au Optronics Corp.

20120086010 - Electronic image detection device: The instant disclosure relates to an electronic image detection device comprising: a plurality of metal electrodes on a first face of an insulating layer; and amorphous silicon regions extending over the insulating layer between the metal electrodes.... Agent: Commissariat A L'energie Atomique Et Aux Energies

20120086012 - Liquid crystal display device: A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120086013 - Thin film transistor, array substrate and manufacturing method thereof: A thin film transistor is provided, which comprises at least an active layer, a source electrode and a drain electrode, wherein the source electrode and the drain electrode are located on the active layer and spaced apart from each other; a channel is defined in the active layer between the... Agent: Boe Technology Group Co., Ltd.

20120086016 - Group iii nitride semiconductor and group iii nitride semiconductor structure: There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity; and irradiating a laser beam onto the second... Agent: Samsung Led Co., Ltd.

20120086015 - Group iii nitride semiconductor device, epitaxial substrate, and method of fabricating group iii nitride semiconductor device: A group III nitride semiconductor device having a gallium nitride based semiconductor film with an excellent surface morphology is provided. A group III nitride optical semiconductor device includes a group III nitride semiconductor supporting base, a GaN based semiconductor region, an active layer, and a GaN semiconductor region. The primary... Agent: Sumitomo Electric Industries, Ltd.

20120086017 - Heterogeneous substrate, nitride-based semiconductor device using same, and manufacturing method thereof: Provided are a heterogeneous substrate, a nitride-based semiconductor device using the same, and a manufacturing method thereof to form a high-quality non-polar or semi-polar nitride layer on a non-polar or semi-polar plane of the heterogeneous substrate by adjusting a crystal growth mode. A base substrate having one of a non-polar... Agent: Korea Electronics Technology Institute

20120086014 - Semiconductor device having glue layer and supporter: A plurality of metal patterns are disposed on a substrate. A support structure is provided between the plurality of metal patterns. The support structure has a supporter and a glue layer. Each of the plurality of metal patterns has a greater vertical length than a horizontal length on the substrate... Agent: Samsung Electronics Co., Ltd.

20120086018 - Package-on-package proximity sensor module: A package-on-package proximity sensor module including a infrared transmitter package and a infrared receiver package is presented. The proximity sensor module may include a fully-assembled infrared transmitter package and a fully-assembled infrared receiver package disposed on a quad flat pack no-lead (QFN) lead frame molded with an IR cut compound... Agent:

20120086019 - Substrate for display panel, and display device: Disclosed is a substrate for display panel that includes, in a pixel, a PIN diode 21 that conducts currents of different values based on the amount of light received, a first inorganic insulating film 11 formed over the PIN diode 21, metal electrodes 12c and 12d that are formed over... Agent: Sharp Kabushiki Kaisha

20120086020 - Integrated photodetecting device: This invention relates to an integrated photodetecting device. The integrated photodetecting device includes a substrate, a light source layer and a photodetector layer. The photodetector layer and light source layer are epitaxied in a stacked structure. The whole device in this invention is fabricated by epitaxy method during a single... Agent: National Cheng Kung University

20120086021 - Multi-layer variable micro structure for sensing substance: An optical sensor includes a substrate having an upper surface, a plurality of protrusions on the substrate, wherein each of the plurality of protrusions is defined by a base at the upper surface of the substrate and by one or more sloped surfaces oriented at oblique angles relative to the... Agent:

20120086023 - Insulating glass (ig) or vacuum insulating glass (vig) unit including light source, and/or methods of making the same: Certain example embodiments of this invention relate to techniques for improving the performance of Lambertian and non-Lambertian light sources. In certain example embodiments, this is accomplished by (1) providing an organic-inorganic hybrid material on LEDs (which in certain example embodiments may be a high index of refraction material), (2) enhancing... Agent: Guardian Industries Corp.

20120086022 - Light source with light scattering features, device including light source with light scattering features, and/or methods of making the same: Certain example embodiments of this invention relate to techniques for improving the performance of Lambertian and non-Lambertian light sources. In certain example embodiments, this is accomplished by (1) providing an organic-inorganic hybrid material on LEDs (which in certain example embodiments may be a high index of refraction material), (2) enhancing... Agent:

20120086024 - Multiple configuration light emitting devices and methods: Multiple configuration light emitting diode (LED) devices and methods are disclosed wherein LEDs within the device can be selectively configured for use in higher voltage, or variable voltage, applications. Variable arrangements of LEDs can be configured. Arrangements can include one or more LEDs connected in series, parallel, and/or a combination... Agent:

20120086025 - Organic light-emitting diode module: An organic light-emitting diode (OLED) module includes a substrate, a bus line, an organic light-emitting device layer, a plurality of conductive elements, and at least one conductive wire. The bus line is configured on the substrate. The organic light-emitting device layer is configured on the substrate and electrically connected to... Agent: Au Optronics Corporation

20120086026 - Optoelectronic semiconductor body and method for the production thereof: An optoelectronic semiconductor body comprises a substantially planar semiconductor layer sequence having a first and a second main side, which has an active layer suitable for generating electromagnetic radiation. Furthermore, the semiconductor body comprises at least one trench that severs the active layer of the semiconductor layer sequence and serves... Agent:

20120086027 - Group-iii nitride compound semiconductor light-emitting device, method of manufacturing group-iii nitride compound semiconductor light-emitting device, and lamp: A group-III nitride compound semiconductor light-emitting device, a method of manufacturing the group-III nitride compound semiconductor light-emitting device, and a lamp. The method includes the steps of: forming an intermediate layer (12) made of a group-III nitride compound on a substrate (11) by activating and reacting gas including a group-V... Agent: Showa Denko K.k.

20120086035 - Led device with a light extracting rough structure and manufacturing methods thereof: A light emitting diode device includes a substrate, one or more light emitting diode chips on the substrate configured to emit electromagnetic radiation, and a lens configured to encapsulate the light emitting diode chips having a surface with a micro-roughness structure. The micro-roughness structure functions to improve the light extraction... Agent: Semileds Optoelectronics Co., Ltd.

20120086031 - Led package, and mold and method of manufacturing the same: The present disclosure provides a light emitting diode (LED) package, which includes a first substrate with electrodes disposed on a top thereof and a second substrate with an LED chip disposed on a top thereof. The LED chip is connected with the electrodes via wires. A first package layer is... Agent: Advanced Optoelectronic Technology, Inc.

20120086033 - Light emitting device: A lighting emitting device includes a conductive substrate; a first conductive layer formed on the conductive substrate; a second conductive layer formed on the first conductive layer; a second semiconductor layer formed on the second conductive layer; an active layer formed on the second semiconductor layer; a first semiconductor layer... Agent:

20120086036 - Light emitting device and ligth emitting device package: Disclosed are a light emitting device, a method of manufacturing the same and a light emitting device package. The light emitting device of the embodiment includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first and second... Agent:

20120086038 - Light emitting device having a dielectric layer and a conductive layer in a cavity: Disclosed are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure including a second conductive semiconductor layer, an active layer over the second conductive semiconductor layer, and a first conductive semiconductor layer over the active layer, a... Agent: Lg Innotek Co., Ltd.

20120086039 - Light emitting device package: A light emitting device package according to embodiments comprises: a package body; a lead frame on the package body; a light emitting device supported by the package body and electrically connected with the lead frame; a filling material surrounding the light emitting device; and a phosphor layer comprising phosphors on... Agent:

20120086037 - Light-emitting device: A light-emitting device comprises a substrate; a light-emitting layer formed on the substrate; a transparent electrode layer formed on the light-emitting layer, the transparent electrode layer having a curved surface; and a reflective layer formed on and along the curved surface of the transparent electrode layer such that the curved... Agent:

20120086029 - Light-emitting diode device and manufacturing method thereof: A light-emitting diode (LED) device includes a substrate and an epitaxial layer which is disposed on a surface of the substrate. A depression is disposed to a sidewall of the LED device, and a reflective layer is disposed to on least one portion of the depression. By the reflective layer... Agent:

20120086040 - Light-emitting diode having a wavelength conversion material layer, and method for fabricating same: Provided is a light-emitting diode having a wavelength conversion material and a method for fabricating the same. The light-emitting diode comprises: a base structure; a light-emitting diode chip arranged on the base structure; and a wavelength conversion material layer arranged on the light-emitting diode chip, such that the area adjacent... Agent: Korea Photonics Technology Institute

20120086030 - Light-emitting element: o

20120086032 - Semiconductor light-emitting structure having low thermal stress: A semiconductor light-emitting structure includes a silicon substrate, a distributed Bragg reflector, a semiconductor structures layer and an epitaxy connecting layer. The silicon substrate has a top surface. The distributed Bragg reflector is formed on the top surface of the silicon substrate. The semiconductor structures layer is configured for emitting... Agent: Advanced Optoelectronic Technology, Inc.

20120086034 - Solid-state light emitting devices and signage with photoluminescence wavelength conversion: A solid-state light emitting device having a solid-state light emitter (LED) operable to generate excitation light and a wavelength conversion component including a mixture of particles of a photoluminescence material and particles of a light reflective material. In operation the phosphor absorbs at least a portion of the excitation light... Agent: Intematix Corporation

20120086028 - Wavelength conversion chip for use with light emitting diodes and method for making same: A wavelength conversion chip is formed by depositing a wavelength conversion material on a substrate to form a layer, removing the resulting wavelength conversion layer from the substrate and then segmenting the wavelength conversion layer into a plurality of wavelength conversion chips. The wavelength conversion material can be annealed by... Agent:

20120086041 - Led package: According to one embodiment, an LED package includes a first leadframe, a second leadframe, an anisotropic conductive film, an LED chip, and a resin body. The first leadframe and the second leadframe are mutually separated. The anisotropic conductive film is provided on the first leadframe and the second leadframe. The... Agent: Kabushiki Kaisha Toshiba

20120086043 - Light emitting device and lighting system: A light emitting device may be provided that includes a conductive support member; a first conductive layer disposed on the conductive support member; a second conductive layer disposed on the first conductive layer; a light emitting structure including a second semiconductor layer formed on the second conductive layer, an active... Agent:

20120086042 - Light emitting device and method of manufacturing the same: A light-emitting device structured so as to increase the amount of light taken out in a certain direction is provided as well as a method of manufacturing this light emitting device. As a result of etching treatment, an upper edge portion of an insulator (19) is curved to have a... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120086044 - Light emitting device and method of producing light emitting device: There is provided a light emitting device that includes a base wafer that contains silicon, a plurality of seed bodies provided in contact with the base wafer, and a plurality of Group 3-5 compound semiconductors that are each lattice-matched or pseudo-lattice-matched to corresponding seed bodies. In the device, a light... Agent: Sumitomo Chemical Co., Ltd.

20120086045 - Vertical semiconductor device with thinned substrate: A vertical semiconductor device (e.g. a vertical power device, an IGBT device, a vertical bipolar transistor, a UMOS device or a GTO thyristor) is formed with an active semiconductor region, within which a plurality of semiconductor structures have been fabricated to form an active device, and below which at least... Agent: Io Semiconductor, Inc.

20120086046 - Self aligned device with enhanced stress and methods of manufacture: A method includes forming a stressed Si layer in a trench formed in a stress layer deposited on a substrate. The stressed Si layer forms an active channel region of a device. The method further includes forming a gate structure in the active channel region formed from the stressed Si... Agent: International Business Machines Corporation

20120086047 - Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same: Semiconductor structures and devices including strained material layers having impurity-free zones, and methods for fabricating same. Certain regions of the strained material layers are kept free of impurities that can interdiffuse from adjacent portions of the semiconductor. When impurities are present in certain regions of the strained material layers, there... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120086048 - Semiconductor devices and methods for manufacturing the same: Semiconductor devices and methods of manufacturing semiconductor devices. A semiconductor device includes a metal gate electrode stacked on a semiconductor substrate with a gate insulation layer disposed therebetween, spacer structures disposed on the semiconductor substrate at both sides of the metal gate electrode, source/drain regions formed in the semiconductor substrate... Agent: Samsung Electronics Co., Ltd.

20120086049 - E-mode high electron mobility transistor and method of manufacturing the same: According to an example embodiment, a high electron mobility transistor (HEMT) includes a substrate, a buffer layer on the substrate, a channel layer on the buffer layer, and a barrier structure on the channel layer. The buffer layer includes a 2-dimensional electron gas (2DEG). A polarization of the barrier structure... Agent: Samsung Electronics Co., Ltd.

20120086050 - Massively parallel interconnect fabric for complex semiconductor devices: An embodiment of this invention uses a massive parallel interconnect fabric (MPIF) at the flipped interface of a core die substrate (having the core logic blocks) and a context die (used for in circuit programming/context/customization of the core die substrate), to produce ASIC-like density and FPGA-like flexibility/programmability, while reducing the... Agent:

20120086051 - Semiconductor device with (110)-oriented silicon: A vertical semiconductor device includes a bottom metal layer and a first P-type semiconductor layer overlying the bottom metal layer. The first P-type semiconductor layer is characterized by a surface crystal orientation of (110) and a first conductivity. The first P-type semiconductor layer is heavily doped. The vertical semiconductor device... Agent: Fairchild Semiconductor Corporation

20120086055 - Devices with gate-to-gate isolation structures and methods of manufacture: Devices having gate-to-gate isolation structures and methods of manufacture are provided. The method includes forming a plurality of trenches in a pad film to form raised portions. The method further includes depositing a hard mask in the trenches and over the upper pad film. The method further includes forming a... Agent: International Business Machines Corporation

20120086052 - High voltage mos device and method for making the same: A high-voltage metal-oxide-semiconductor (HVMOS) device may include a source, a drain, a gate positioned proximate to the source, a drift region disposed substantially between the drain and a region of the gate and the source, and a self shielding region disposed proximate to the drain. A corresponding method is also... Agent: Macronix International Co., Ltd.

20120086057 - Nonvolatile memory device and method of manufacturing the same: A semiconductor memory device includes a gate insulating layer formed over a semiconductor substrate; a first conductive layer pattern for select transistors and memory cells formed on the gate insulating layer; a dielectric layer formed on the first conductive layer pattern; a second conductive layer pattern formed on the dielectric... Agent: Hynix Semiconductor Inc.

20120086054 - Semiconductor structure and method for making the same: A semiconductor structure is disclosed. The semiconductor structure includes a gate structure disposed on a substrate, a source and a drain respectively disposed in the substrate at two sides of the gate structure, a source contact plug disposed above the source and electrically connected to the source and a drain... Agent:

20120086056 - Superior integrity of a high-k gate stack by forming a controlled undercut on the basis of a wet chemistry: In sophisticated semiconductor devices, the encapsulation of sensitive gate materials, such as a high-k dielectric material and a metal-containing electrode material, which are provided in an early manufacturing stage may be achieved by forming an undercut gate configuration. To this end, a wet chemical etch sequence is applied after the... Agent: Globalfoundries Inc.

20120086053 - Transistor having notched fin structure and method of making the same: A transistor includes a notched fin covered under a shallow trench isolation layer. One or more notch may be used, the size of which may vary along a lateral direction of the fin. In some embodiments, The notch is formed using anisotropic wet etching that is selective according to silicon... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120086058 - Tunnel field effect transistor: A tunnel field effect transistor and a method of making the same. The transistor includes a semiconductor substrate. The transistor also includes a gate located on a major surface of the substrate. The transistor further includes a drain of a first conductivity type. The transistor also includes a source of... Agent: Nxp B.v.

20120086059 - Engineering multiple threshold voltages in an integrated circuit: An integrated circuit and method for forming an integrated circuit. There are at least three field-effect transistors with at least two of the field-effect transistors having the same electrically insulating material which is ferroelectric when unstrained or is capable of being ferroelectric when strain is induced. It is optional for... Agent: International Business Machines Corporation

20120086061 - Semiconductor device: A semiconductor device with a transistor for supplying a current to a pixel comprising an EL element, that can supply an accurate current without the influence of variations even when a small signal current, is provided. A precharge voltage is supplied in advance for the current supply to a pixel... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120086060 - Semiconductor device and method of forming the same: A semiconductor device includes a semiconductor substrate, a gate electrode, a dummy gate electrode, and a first impurity diffusion region. The semiconductor substrate has first and second grooves. The gate electrode is in the first groove. The dummy gate electrode is in the second groove. The dummy gate electrode has... Agent: Elpida Memory, Inc.

20120086063 - Semiconductor device: A semiconductor device includes a semiconductor substrate having a memory cell region and a peripheral circuit region; a bit line extending over the memory cell region and the peripheral circuit region, the bit line including a first portion in the peripheral circuit region; and a sense amplifier in the peripheral... Agent: Elpida Memory, Inc.

20120086062 - Switching power supply device and a semiconductor integrated circuit: In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is... Agent: Renesas Electronics Corporation

20120086064 - Method of forming enhanced capacitance trench capacitor: A method of fabricating a trench capacitor is provided in which a material composition of a semiconductor region of a substrate varies in a quantity of at least one component therein such that the quantity alternates with depth a plurality of times between at least two different values. For example,... Agent: International Business Machines Corporation

20120086065 - Semiconductor device with vertical channel transistor and method of fabricating the same: Provided is a semiconductor device having a vertical channel transistor and method of fabricating the same. The semiconductor device includes first and second field effect transistors, wherein a channel region of the first field effect transistor serves as source/drain electrodes of the second field effect transistor, and a channel region... Agent: Samsung Electronics Co., Ltd.

20120086066 - Semiconductor device with vertical channel transistor and method of fabricating the same: A semiconductor memory device includes a semiconductor substrate, a semiconductor pillar extending from the semiconductor substrate, the semiconductor pillar comprising a first region, a second region, and a third region, the second region positioned between the first region and the third region, the third region positioned between the second region... Agent: Samsung Electronics Co., Ltd.

20120086067 - Semiconductor device and structure: A device, comprising: a first layer and a second layer wherein both said first layer and said second layer are mono-crystalline, wherein said first layer comprises first transistors, wherein said second layer comprises second transistors, wherein at least one of said second transistors substantially overlays one of said first transistors,... Agent: Monolithic 3d Inc.

20120086070 - Fabrication method and structure of semiconductor non-volatile memory device: A non-volatile semiconductor memory device with good write/erase characteristics is provided. A selection gate is formed on a p-type well of a semiconductor substrate via a gate insulator, and a memory gate is formed on the p-type well via a laminated film composed of a silicon oxide film, a silicon... Agent:

20120086068 - Method for depositing a dielectric onto a floating gate for strained semiconductor devices: A method for forming a semiconductor device and a corresponding device are provided. The method includes forming a floating gate device in a process with dual strain layers, and an etch stop layer. An oxide is formed between the floating gate device and a nitride layer above the floating gate.... Agent: Synopsys Inc.

20120086069 - Nonvolatile semiconductor memory device and method of fabricating the same: In one embodiment, a nonvolatile semiconductor memory device includes a substrate; a tunnel insulating film on the substrate; a charge storage layer on the tunnel insulating film; a block insulating film on the charge storage layer; a first element isolation insulating film in an element isolation trench in the substrate,... Agent: Kabushiki Kaisha Toshiba

20120086071 - Stress memorization process improvement for improved technology performance: Semiconductor substrate with a deformed gate region and a method for the fabrication thereof. The semiconductor substrate has improved device performance compared to devices without a deformed gate region and decreased dopant loss compared to devices with deformed source/drain regions.... Agent: International Business Machines Corporation

20120086072 - Three-dimensional semiconductor memory device and related method of manufacture: A method of manufacturing a three-dimensional semiconductor memory device comprises forming a thin layer structure by alternately stacking first and second material layers on a substrate, forming a penetration dent penetrating the thin layer structure and exposing a top surface of the substrate recessed by the penetration dent, forming a... Agent: Samsung Electronics Co., Ltd.

20120086073 - Power semiconductor device and method for manufacturing same: A vertical power semiconductor device includes a first semiconductor layer of a first conductivity type formed in both a cell section and a termination section, the termination section surrounding the cell section, a second semiconductor layer of a second conductivity type formed on the first semiconductor layer in the cell... Agent: Kabushiki Kaisha Toshiba

20120086075 - Device with aluminum surface protection: A semiconductor structure with a metal gate structure includes a first type field-effect transistor having a first gate including: a high k dielectric material on a substrate, a first metal layer on the high k dielectric material layer and having a first work function, and a first aluminum layer on... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120086074 - Semiconductor devices and methods of forming the same: Semiconductor devices and methods of forming the same may be provided. The semiconductor devices may include a trench in a substrate. The semiconductor devices may also include a bulk electrode within opposing sidewalls of the trench. The semiconductor devices may further include a liner electrode between the bulk electrode and... Agent:

20120086076 - Super-junction semiconductor device: Provision of a super-junction semiconductor device capable of reducing rises in transient on-resistance at the time of repeated switching operation. A super-junction structure is provided that has a striped parallel surface pattern, where a super-junction stripe and a MOS cell 6 stripe are parallel, and a p column Y2 over... Agent: Fuji Electric Co., Ltd.

20120086078 - Devices with gate-to-gate isolation structures and methods of manufacture: Devices having gate-to-gate isolation structures and methods of manufacture are provided. The method includes forming a plurality of isolation structures in pad films and an underlying substrate. The method further includes forming a plurality of fins including the isolation structures and a second plurality of fins including the two pad... Agent: International Business Machines Corporation

20120086077 - Fet structures with trench implantation to improve back channel leakage and body resistance: An FET structure on a semiconductor substrate which includes forming recesses for a source and a drain of the gate structure on a semiconductor substrate, halo implanting regions through the bottom of the source and drain recesses, the halo implanted regions being underneath the gate stack, implanting junction butting at... Agent: International Business Machines Corporation

20120086079 - Semiconductor device: A semiconductor device includes: a first semiconductor layer of a first conductivity type; an insulation layer on the first semiconductor layer; a second semiconductor layer in the insulation layer; an active element in the second semiconductor layer; a first semiconductor region on the first semiconductor layer and of a second... Agent:

20120086080 - Low-voltage structure for high-voltage electrostatic discharge protection: An electrostatic discharge (ESD) protected device may include a substrate, an N+ doped buried layer, an N-type well region and a P-type well region. The N+ doped buried layer may be disposed proximate to the substrate. The N-type well region may be disposed proximate to a portion of the N+... Agent: Macronix International Co., Ltd.

20120086081 - Semiconductor device: A semiconductor device includes a thin-film diode (1) and a protection circuit with a protection diode (20). The thin-film diode (1) includes: a semiconductor layer with first, second and channel regions; a gate electrode; a first electrode (S1) connected to the first region and the gate electrode; and a second... Agent: Sharp Kabushiki Kaisha

20120086083 - Devices with gate-to-gate isolation structures and methods of manufacture: Devices having gate-to-gate isolation structures and methods of manufacture are provided. The method includes forming a plurality of isolation structures in a pad film and an underlying substrate. The method further includes protecting at least one of the plurality of isolation structures in order to preserve its height. The method... Agent: International Business Machines Corporation

20120086082 - Dual port static random access memory cell layout: A dual port static random access memory cell has pull-down transistors, pull-up transistors, and pass transistors. A first active region has a first pull-down transistor coupled to a true data node, a second pull-down transistor coupled to a complementary data node; a first pass transistor coupled to the true data... Agent:

20120086085 - Method of fabricating dual high-k metal gate for mos devices: The present disclosure provides a method of fabricating a semiconductor device. The method includes providing a semiconductor substrate having a first region and a second region, forming a high-k dielectric layer over the semiconductor substrate, forming a capping layer over the high-k dielectric layer in the first region, forming a... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120086084 - Semiconductor device: A semiconductor device comprise a memory cell region and a peripheral circuit region on a semiconductor substrate, and a metal laminating wiring extending over the memory cell region and the peripheral circuit region. The metal laminating wiring is a bit line in the memory cell region, and is a portion... Agent: Elpida Memory, Inc.

20120086086 - Mems device and composite substrate for an mems device: An MEMS device and a composite substrate for an MEMS device are provided. The MEMS device comprises a first silicon structure layer and a second silicon structure layer fixedly connecting to the first silicon structure layer. The first silicon structure layer has a twistable rod and a first plane. The... Agent: Touch Micro-system Technology Corp.

20120086088 - Electronic component: An electronic component includes: a first substrate having a through-hole; a second substrate opposite the first substrate; a sealing member surrounding a sealing space formed between the first substrate and the second substrate; a functional element having at least a part thereof disposed in the sealing space, and a through-electrode... Agent: Seiko Epson Corporation

20120086087 - Soi-based cmut device with buried electrodes: A muli-layer stacked micro-electro-mechanical (MEMS) device that acts as a capacitive micromachined ultrasonic transducer (CMUT) with a hermetically sealed device cavity formed by a wafer bonding process with semiconductor and insulator layers. The CMUT design uses a doped Si SOI and wafer bonding fabrication method, and is composed of semiconductor... Agent:

20120086089 - Magnetic tunnel junction device and fabrication: A magnetic tunnel junction (MTJ) device and fabrication method is disclosed. A particular embodiment includes a magnetic tunnel junction structure above a bottom electrode. The particular embodiment further includes a portion of a diffusion barrier layer adjacent to the magnetic tunnel junction structure. A top of the magnetic tunnel junction... Agent: Qualcomm Incorporated

20120086090 - Methods and apparatus for passive attachment of components for integrated circuits: Methods and apparatus provide a sensor including a component coupled to the leadframe such that the component is an integrated part of the IC package.... Agent: Allegro Microsystems, Inc.

20120086091 - Backside image sensor: A backside image sensor including an assembly of pixels, each pixel including, in a vertical stack, a photosensitive area and a filtering element topping the photosensitive area on the back surface side, wherein at least two adjacent filtering elements of adjacent pixels are separated by a vertical metal wall extending... Agent: Stmicroelectronics S.a.

20120086096 - Condenser lens-coupled photoconductive antenna device for terahertz wave generation and detection and fabricating method thereof: Provided are a condenser lens-coupled photoconductive antenna device for terahertz wave generation and detection and a fabricating method thereof. A condenser lens-coupled photoconductive antenna device for terahertz wave generation and detection includes a condenser lens, a photoconductive thin film deposited on the condenser lens, and a metal electrode formed on... Agent: Electronics And Telecommunications Research Institute

20120086095 - Photoelectric conversion device and image pick-up device: A photoelectric conversion device includes a semiconductor substrate, an insulating layer provided on the semiconductor substrate, an electrode provided on the insulating layer, a photoelectric conversion film provided on the electrode for converting received light to charges, a line connected between the electrode and the semiconductor substrate, a first planar... Agent: Rohm Co., Ltd.

20120086092 - Solid-state imaging device and manufacturing method thereof, and electronic apparatus: A solid-state imaging device includes a substrate in which a plurality of pixels including photoelectric converters are formed, a wiring layer that includes wirings in a plurality of layers formed via an interlayer insulating film in a front surface side of the substrate, a base electrode pad portion that includes... Agent: Sony Corporation

20120086094 - Solid-state imaging device, manufacturing method of solid-state imaging device, and electronic equipment: A solid-state imaging device includes: a substrate; a wiring layer formed on a front side of the substrate in which pixels are formed; a surface electrode pad section formed in the wiring layer; a light-shielding film formed on a rear side of the substrate; a pad section base layer formed... Agent: Sony Corporation

20120086093 - Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus: A solid-state imaging device includes a plurality of pixels formed on a semiconductor substrate and include a photoelectric conversion unit; a color filter on the pixels; an on-chip microlens made of an organic film on the color filter, corresponding to each of the pixels; a first inorganic film formed on... Agent: Sony Corporation

20120086097 - Front-side illuminated, back-side contact double-sided pn-junction photodiode arrays: The present application is a photodiode detector array for use in computerized tomography (CT) and non-CT applications. Specifically, the present application is a high-density photodiode arrays, with low dark current, low capacitance, high signal to noise ratio, high speed, and low crosstalk that can be fabricated on relatively large substrate... Agent:

20120086098 - Ionic isolation ring: There has been very little (if any) attention to address contamination diffusion within an integrated circuit (IC) because there are very few applications where a protective overcoat will be penetrated as part of the manufacturing process. Here, a sealing ring is provided that address this problem. Preferably, the sealing ring... Agent: Texas Instruments Incorporated

20120086099 - Schottky diode: An integrated circuit device and method for fabricating the integrated circuit device is disclosed. The integrated circuit device includes a substrate, a diffusion source, and a lightly doped diffusion region in contact with a conductive layer. A junction of the lightly doped diffusion region with the conductive layer forms a... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120086100 - Cmos structure and method of manufacture: CMOS structures with a replacement substrate and methods of manufacture are disclosed herein. The method includes forming a device on a temporary substrate. The method further includes removing the temporary substrate. The method further includes bonding a permanent electrically insulative substrate to the device with a bonding structure.... Agent: International Business Machines Corporation

20120086101 - Integrated circuit and interconnect, and method of fabricating same: The disclosure relates generally to integrated circuits (IC), IC interconnects, and methods of fabricating the same, and more particularly, high performance inductors. The IC includes at least one trench within a dielectric layer disposed on a substrate. The trench is conformally coated with a liner and seed layer, and includes... Agent: International Business Machines Corporation

20120086102 - Integrated circuits with magnetic core inductors and methods of fabrications thereof: In one embodiment, a method of forming a semiconductor device includes forming a first inductor coil within and/or over a substrate. The first inductor coil is formed adjacent a top side of the substrate. First trenches are formed within the substrate adjacent the first inductor coil. The first trenches are... Agent:

20120086104 - Atomic layer deposition of crystalline prcamno (pcmo) and related structures and methods: Methods of forming a PrCaMnO (PCMO) material by atomic layer deposition. The methods include separately exposing a surface of a substrate to a manganese-containing precursor, an oxygen-containing precursor, a praseodymium-containing precursor and a calcium-containing precursor. The resulting PCMO material is crystalline. A semiconductor device structure including the PCMO material, and... Agent: Micron Technology, Inc.

20120086103 - Technique to create a buried plate in embedded dynamic random access memory device: A method for forming a trench structure is provided for a semiconductor and/or memory device, such as an DRAM device. In one embodiment, the method for forming a trench structure includes forming a trench in a semiconductor substrate, and exposing the sidewalls of the trench to an arsenic-containing gas to... Agent: International Business Machines Corporation

20120086105 - Semiconductor device having capacitor capable of reducing additional processes and its manufacture method: A first capacitor recess and a wiring trench are formed through an interlayer insulating film. A lower electrode fills the first capacitor recess, and a first wiring fills the wiring trench. An etching stopper film and a via layer insulating film are disposed over the interlayer insulating film. A first... Agent: Fujitsu Semiconductor Limited

20120086106 - Method for increasing the area of non-polar and semi-polar nitride substrates: A method for fabricating a high quality freestanding nonpolar and semipolar nitride substrate with increased surface area, comprising stacking multiple films by growing the films one on top of each other with different and non-orthogonal growth directions.... Agent: The Regents Of The University Of California

20120086107 - Semiconductor device manufacturing method, substrate processing apparatus and semiconductor device: A semiconductor device manufacturing method includes loading a substrate, on which a high-k film is formed, into a processing chamber, performing a reforming process by heating the high-k film through irradiation of a microwave on the substrate, and unloading the substrate from the processing chamber.... Agent: Hitachi Kokusai Electric Inc.

20120086108 - Chip level emi shielding structure and manufacture method thereof: A chip level EMI shielding structure and manufacture method thereof are provided. The chip level EMI shielding structure includes a semiconductor substrate, at least one ground conductor line, a ground layer, and a connection structure. The ground conductor line is disposed on a first surface of the semiconductor substrate, and... Agent: Universal Scientific Industrial (shanghai) Co., Ltd.

20120086110 - Ic package: An IC package which can avoid electromagnetic waves leaked from a side surface of the IC package includes: an electric circuit board on which an IC chip is mounted; a first conductive board arranged at a position facing the electric circuit board while the IC chip on the electric circuit... Agent:

20120086109 - Semiconductor device including shielding layer and fabrication method thereof: Example embodiments relate to a semiconductor device. The semiconductor device may include a first semiconductor chip including a semiconductor substrate, a first through via that penetrates the semiconductor substrate, a second semiconductor chip stacked on one plane of the first semiconductor chip, and a shielding layer covering at least one... Agent: Samsung Electronics Co., Ltd.

20120086111 - Semiconductor device: The present invention reduces the occurrence of fracture in external terminal connecting sections and improves the reliability of secondary packaging of a semiconductor device. Specifically, the present invention provides a semiconductor device including a wiring board, a semiconductor chip mounted on one surface of the wiring board via a bonding... Agent: Elpida Memory, Inc.

20120086112 - Multi-component electronic system having leadframe with support-free cantilever leads: A pallet (501) supporting a half-etched leadframe with cantilever-type leads (403) without metallic supports during the step of attaching components (510) to the leads in order to assemble an electronic system. After assembly, the pallet is removed before the molding step that encapsulates (601a) the components on the leadframe and... Agent: Texas Instruments Incorporated

20120086113 - Flexible circuits and methods for making the same: Embodiments of the invention relate to a method for creating a flexible circuit, including defining a cavity in a top surface of a substrate before disposing a semiconductor chip within the cavity, such that a backside of the chip is disposed beneath the top surface of the substrate and above... Agent:

20120086114 - Millimeter devices on an integrated circuit: An integrated circuit (IC) device arrangement includes a substrate, an IC die coupled to the substrate, an antenna coupled to the IC die, and a first wirelessly enabled functional block coupled to the IC die. The wirelessly enabled functional block is configured to wirelessly communicate with a second wirelessly enabled... Agent: Broadcom Corporation

20120086115 - Integrated circuit packaging system with interposer interconnections and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing an integrated circuit; mounting a routing structure having a functional side above the integrated circuit; mounting a vertical interconnect to the functional side of the routing structure and the vertical interconnect extending vertically away from the routing structure;... Agent:

20120086116 - Electronic component device, method of manufacturing the same and wiring substrate: An electronic component device includes a substrate, an electrode post made of a metal material, provide to stand on the substrate, and an electronic component whose connection electrode is connected to the electrode post, wherein the connection electrode of the electronic component and the electrode post are joined by an... Agent: Shinko Electric Industries Co., Ltd.

20120086117 - Package with embedded chip and method of fabricating the same: A package embedded with a chip and a method of fabricating the package of embedded chip. The package of embedded chip includes a dielectric layer having a first surface and a second surface opposing the first surface; a plurality of conductive pillars formed in the dielectric layer and exposed from... Agent: Siliconware Precision Industries Co., Ltd.

20120086119 - Chip stacked structure: A chip stacked structure is provided. The chip stacked structure includes a first die and a second die stacked on the first die. The first die has a plurality of connection structures each which has a through hole, a connection pad and a solder bump. The connection pad has a... Agent: Universal Scientific Industrial (shanghai) Co., Ltd.

20120086121 - Method for manufacturing semiconductor device, and semiconductor device: A semiconductor device includes an insulating film base member and a wiring pattern that is formed on the insulating film base member. The wiring pattern has a surface, with at least a peripheral section of the surface being a peeled surface of the wiring pattern peeled from the insulating film... Agent: Seiko Epson Corporation

20120086118 - Semiconductor package and method of fabricating the same: Provided is a semiconductor package and a method of fabricating the same. The semiconductor package includes: a package body including a plurality of sheets; semiconductor chips mounted in the package body; and an external connection terminal provided on a first side of the package body, wherein the sheets are stacked... Agent: Electronics And Telecommunications Research Institute

20120086120 - Stacked semiconductor package having conductive vias and method for making the same: The present invention relates to a stacked semiconductor package and a method for making the same. The method includes the steps of: forming and curing a first protective layer to cover a plurality of first bumps of a first wafer; cutting the first wafer to form a plurality of first... Agent: Advanced Semiconductor Engineering, Inc.

20120086123 - Semiconductor assembly and semiconductor package including a solder channel: Semiconductor packages connecting a semiconductor chip to an external device by bumps are provided. The semiconductor packages may include a connection pad on a semiconductor chip, a connecting bump on and configured to be electrically connected to the connection pad and a supporting bump on the semiconductor chip and configured... Agent: Samsung Electronics Co., Ltd.

20120086124 - Semiconductor device and method of manufacturing the same: A semiconductor device according to this embodiment has an electrode (electrode pad) and an insulative film (protective resin film) formed on the electrode and having an opening for exposing the electrode. The semiconductor device further has an under bump metal (UBM layer) formed over the insulative film and connected with... Agent: Renesas Electronics Corporation

20120086122 - Semiconductor device and semiconductor package having the same: The present invention relates to a semiconductor device and a semiconductor package having the same. The semiconductor device includes a conductive element. The conductive element is disposed on a protruded conductive via and liner, and covers a sidewall of the liner. Whereby, the conductive element can protect the protruded conductive... Agent:

20120086125 - Semiconductor having chip stack, semiconductor system, and method of fabricating the semiconductor apparatus: In one embodiment, a semiconductor device includes a plurality of semiconductor chip stacks mounted on a substrate. Bonding terminals disposed on the substrate correspond to the chip stacks, such that at least one chip in each chip stack may be directly connected to a bonding terminal on the substrate and... Agent:

20120086126 - Package systems and manufacturing methods thereof: A package system includes a first substrate and a second substrate. The second substrate is electrically coupled with the first substrate. The second substrate includes at least one first opening. At least one electrical bonding material is disposed between the first substrate and the second substrate. A first portion of... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120086127 - Package systems and manufacturing methods thereof: A package system includes a first substrate. A second substrate is electrically coupled with the first substrate. At least one electrical bonding material is disposed between the first substrate and the second substrate. The at least one electrical bonding material includes a eutectic bonding material. The eutectic bonding material includes... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120086128 - Borderless interconnect line structure self-aligned to upper and lower level contact vias: A metal layer is deposited on a planar surface on which top surfaces of underlying metal vias are exposed. The metal layer is patterned to form at least one metal block, which has a horizontal cross-sectional area of a metal line to be formed and at least one overlying metal... Agent: International Business Machines Corporation

20120086130 - Layered chip package and method of manufacturing same: A layered chip package includes a main body. The main body includes a main part, and further includes first terminals and second terminals disposed on the top and bottom surfaces of the main part, respectively. The main part includes first and second layer portions, and through electrodes penetrating them. The... Agent: Headway Technologies, Inc.

20120086129 - Manufacturing of a device including a semiconductor chip: A method includes providing a semiconductor chip having a first main surface and a second main surface opposite to the first main surface. An electrically insulating material is deposited on the first main surface of the semiconductor chip using a plasma deposition method. A first electrically conductive material is deposited... Agent:

20120086132 - Method of manufacturing via electrode: Provided is a method of manufacturing a via electrode by which productivity and production yield can be augmented or maximized. The method of the present invention includes: forming a via hole at a substrate; forming a catalyst layer at a sidewall and a bottom of the via hole; and forming... Agent: Electronics And Telecommunications Research Institute

20120086131 - Semiconductor element having conductive vias and semiconductor package having a semiconductor element with conductive vias and method for making the same: The present invention relates to a semiconductor element having conductive vias and a semiconductor package having a semiconductor element with conductive vias and a method for making the same. The semiconductor element having conductive vias includes a silicon substrate and at least one conductive via. The thickness of the silicon... Agent: Advanced Semiconductor Engineering, Inc.

20120086133 - Semiconductor device and semiconductor device manufacturing method: A semiconductor device includes: a semiconductor chip with a plurality of electrode pads disposed at a top surface thereof; a plurality of thin film terminals set apart from one another via respective separator portions, which are located below a bottom surface of the semiconductor chip; an insulating layer disposed between... Agent: Aoi Electronics Co., Ltd.

20120086134 - Method of forming patterns of semiconductor device: A method of forming patterns of a semiconductor device comprises forming a number of first insulating patterns that define sidewalls by patterning a first insulating layer formed over a semiconductor substrate, forming second insulating patterns, each second insulating pattern comprising a horizontal portion having two ends and being parallel to... Agent: Hynix Semiconductor Inc.

20120086135 - Interposers, electronic modules, and methods for forming the same: In various embodiments, an electronic module features a first cavity in a first side of a substrate, a fill hole extending from the first cavity, and a second cavity in a second side of the substrate. The second cavity is in fluidic communication with the fill hole, and a die... Agent:

20120080656 - Graphene oxide memory devices and method of fabricating the same: A graphene oxide memory device includes a substrate, a lower electrode disposed on the substrate, an electron channel layer disposed on the lower electrode by using a graphene oxide, and an upper electrode disposed on the electron channel layer.... Agent: Electronics And Telecommunications Research Institute

20120080657 - Low operational current phase change memory structures: Memory cells described herein have an increased current density at lateral edges of the active region compared to that of conventional mushroom-type memory cells, resulting in improved operational current efficiency. As a result, the amount of heat generated within the lateral edges per unit value of current is increased relative... Agent: Macronix International Co., Ltd.

20120080658 - Graphene electronic device and method of fabricating the same: A graphene electronic device and a method of fabricating the graphene electronic device are provided. The graphene electronic device may include a graphene channel layer formed on a hydrophobic polymer layer, and a passivation layer formed on the graphene channel layer. The hydrophobic polymer layer may prevent or reduce adsorption... Agent: Samsung Electronics Co., Ltd.

20120080660 - Light emitting diode and light emitting device package including the same: A light emitting diode is disclosed. The disclosed light emitting diode includes a light emitting structure including a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer, active layer, and second-conductivity-type semiconductor layer are disposed to be adjacent to one another in a same... Agent:

20120080659 - Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device: In the nitride based semiconductor optical device, the strained well layers extend along a reference plane tilting at a tilt angle α from the plane that is orthogonal to a reference axis extending in the direction of the c-axis. A gallium nitride based semiconductor layer is adjacent to a light-emitting... Agent: Sumitomo Electric Industries, Ltd.

20120080661 - Graphene interconnection and method of manufacturing the same: According to one embodiment, a graphene interconnection includes an insulating film, a catalyst film, and a graphene layer. An insulating film includes an interconnection trench. A catalyst film is formed in the interconnection trench and filling at least a portion of the interconnection trench. A graphene layer is formed on... Agent: Kabushiki Kaisha Toshiba

20120080662 - Graphene interconnection and method of manufacturing the same: According to one embodiment, a graphene interconnection includes a first insulating film, a first catalyst film, and a first graphene layer. A first insulating film includes an interconnection trench. A first catalyst film is formed on the first insulating film on both side surfaces of the interconnection trench. A first... Agent: Kabushiki Kaisha Toshiba

20120080667 - Composite material, light-emitting element, light-emitting device, electronic device, and lighting device: A composite material including an organic compound and an inorganic compound and having a high carrier-transport property is provided. A composite material having a high carrier-injection property to an organic compound is provided. A composite material in which light absorption due to charge transfer interaction is unlikely to occur is... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120080666 - Composition, film using the composition, charge transport layer, organic electroluminescence device, and method for forming charge transport layer: A composition includes: (B) an arylamine derivative having at least one polymerizable group; and (A) a cyano group-free azo based polymerization initiator.... Agent:

20120080670 - Compound containing a 5-membered heterocycle and organic light-emitting diode using same, and terminal for same: Disclosed are a novel-structural compound including a 5-membered heterocycle, an organic electronic device using the same, and a terminal thereof.... Agent: Duksan High Metal Co., Ltd.

20120080665 - Ferro-electric device and modulatable injection barrier: Described is a modulatable injection barrier and a semiconductor element comprising same. More particularly, the invention relates to a two-terminal, non-volatile programmable resistor. Such a resistor can be applied in non-volatile memory devices, and as an active switch e.g. in displays. The device comprises, in between electrode layers, a storage... Agent: Rjiksuniversiteit Groningen

20120080669 - Light emitting device and manufacturing method thereof: A light emitting element having an organic compound, which can be extended its longevity is provided. According to the present invention, there is provided a constitution in which, in order to protect a light emitting element from moisture, an inorganic insulating film 312a, a stress relaxation layer 312b having transparency... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120080671 - Organic el display device and method for manufacturing the same: An organic EL display device (1) includes an element substrate (30), a sealing substrate (20) facing the element substrate (30), an organic EL element (4) provided on the element substrate (30) and between the element substrate (30) and the sealing substrate (20), a first sealing member (5) made of fritted... Agent: Sharp Kabushiki Kaisha

20120080668 - Organic el lighting device and method of manufacturing the same: An organic EL lighting device includes a first electrode which is formed corresponding to each of the plurality of light-emitting portions on a substrate, an organic functional layer which is formed at least in a light-emitting area, a second electrode which is formed at least on the organic functional layer,... Agent: Seiko Epson Corporation

20120080664 - Organic light emitting display apparatus and method of manufacturing the same: An organic light emitting display apparatus and method of manufacturing the organic light emitting display apparatus including a lower substrate having power lines in a non-display region that is outside a display region whereon an image is realized; and a functional layer formed between the power lines and an encapsulation... Agent: Samsung Mobile Display Co., Ltd.

20120080663 - Organic light-emitting display device and manufacturing method of the same: An organic light-emitting display device and a method of manufacturing the organic light-emitting display device are disclosed. The organic light-emitting display device includes a bottom capacitor electrode that is formed over the same plane as an active layer of a thin film transistor and includes a semiconductor doped with ion... Agent: Samsung Mobile Display Co., Ltd.

20120080673 - Crack stop barrier and method of manufacturing thereof: A wafer is disclosed. The wafer comprises a plurality of chips and a plurality of kerfs. A kerf of the plurality of kerfs separates one chip from another chip. The kerf comprises a crack stop barrier.... Agent:

20120080674 - Led package: According to one embodiment, an LED package includes first and second lead frames spaced from each other, and an LED chip. Each of the first and second lead frames includes a base portion and a plurality of extending portions extending from the base portion. A part of a lower surface... Agent: Kabushiki Kaisha Toshiba

20120080672 - Two-photon-absorption-based silicon waveguide photo-power monitor: Instead of monitoring the optical power coming out of a waveguide, a direct method of monitoring the optical power inside the waveguide without affecting device or system performance is provided. A waveguide comprises a p-i-n structure which induces a TPA-generated current and may be enhanced with reverse biasing the diode.... Agent:

20120080676 - Backside nanoscale texturing to improve ir response of silicon solar cells and photodetectors: The absorption coefficient of silicon for infrared light is very low and most solar cells absorb very little of the infrared light energy in sunlight. Very thick cells of crystalline silicon can be used to increase the absorption of infrared light energy but the cost of thick crystalline cells is... Agent:

20120080675 - Photoelectric converter, method of manufacturing photoelectric converter and imaging device: A photoelectric converter includes a pair of electrodes and a plurality of organic layers. The pair of electrodes is provided above a substrate. The plurality of organic layers is interposed between the pair of electrodes and includes a photoelectric conversion layer and a given organic layer being formed on one... Agent: Fujifilm Corporation

20120080679 - Alkylsilane laminate, production method thereof and thin-film transistor: Provided is an alkylsilane laminate with which it is possible to obtain an organic semiconductor film having excellent semiconductor properties. Such a laminate can be useful for an organic thin-film transistor. The alkylsilane laminate comprises an underlayer (Sub) having hydroxyl groups at the surface and an alkylsilane thin film (AS)... Agent: Teijin Limited

20120080678 - Compositions for solution process, electronic devices fabricated using the same, and fabrication methods thereof: Exemplary embodiments provide compositions for a solution process, electronic devices fabricated using the same, and fabrication methods thereof An oxide nano-structure is formed using a sol-gel process. An oxide thin film transistor is formed using the oxide nano-structure.... Agent: Industry-academic Cooperation Foundation, Yonsei University

20120080677 - Thin film transistor and manufacturing method thereof, thin film transistor array panel and manufacturing method thereof: A manufacturing method of a thin film transistor array panel includes forming a gate line including a gate electrode on a substrate; forming a gate insulating layer on the gate line; forming a semiconductor layer on the gate insulating layer; forming a data line including a data conductive layer pattern... Agent: Samsung Electronics Co., Ltd.

20120080682 - Method for producing display device: In a liquid crystal display device, a first substrate includes electrical wirings and a semiconductor integrated circuit which has TFTs and is connected electrically to the electrical wirings, and a second substrate includes a transparent conductive film on a surface thereof. A surface of the first substrate that the electrical... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120080680 - Organic light emitting display device: An organic light emitting display device includes a substrate, a plurality of unit pixels on the substrate, each unit pixel including a first region that emits light and a second region that transmits external light, thin film transistors (TFTs) disposed in the first region of each unit pixel, first electrodes... Agent:

20120080681 - Thin film transistor and organic light-emitting display: A thin film transistor including: a substrate; an active layer formed over the substrate; a gate insulating layer formed over the active layer; a gate electrode formed over the gate insulating layer; an interlayer insulating layer formed over the gate electrode; and source and drain electrodes that contact the active... Agent: Samsung Mobile Display Co., Ltd.

20120080683 - Thin film transitor, display device, and liquid crystal display device: A thin film transistor, a display device and a liquid crystal display device are provided. The thin film transistor includes a gate electrode film onto which light from a light source is irradiated, a semiconductor film formed on the gate electrode film and on an opposite side to the light... Agent: Hitachi Displays, Ltd.

20120080685 - Semiconductor device and method of fabricating the same: An active matrix display device having a pixel structure in which pixel electrodes, gate wirings and source wirings are suitably arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the number of steps. The device comprises a gate electrode and a... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120080684 - Thin film transistor and flat panel display device including the same: A thin film transistor (TFT) and a flat panel display device including the same. The TFT includes a substrate, a gate electrode formed over the substrate, the gate electrode formed with silicon doped with impurities, a gate wiring connected to the gate electrode, an active layer formed over the gate... Agent: Samsung Mobile Display Co., Ltd.

20120080689 - Light emitting diode, light emitting diode lamp, and lighting apparatus: A light-emitting diode having a high output, high efficiency, and a long service life under a high-humidity environment is provided. The light-emitting diode (1) includes a compound semiconductor layer (2) having a light-emitting section (7), ohmic electrodes (4, 5) provided on the main light extraction surface of the compound semiconductor... Agent: Showa Denko K.k.

20120080687 - Nitride semiconductor device: A nitride semiconductor device of an embodiment includes: a nitride semiconductor device, including: a nitride semiconductor substrate; a first anode electrode formed on the substrate; a recess structure formed on the substrate of an outer peripheral portion of the first anode electrode by engraving the substrate; a second anode electrode... Agent: Kabushiki Kaisha Toshiba

20120080686 - Semiconductor devices and methods of manufacturing thereof: In one embodiment, a method of forming a semiconductor device includes forming a first porous semiconductor layer over a top surface of a substrate. A first epitaxial layer is formed over the first porous semiconductor layer. A circuitry is formed within and over the first epitaxial layer. The circuitry is... Agent:

20120080688 - Ultra-thin ohmic contacts for p-type nitride light emitting devices: A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic... Agent: Cree, Inc.

20120080690 - Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core: According to an embodiment, a composite wafer includes a carrier substrate having a graphite core and a monocrystalline semiconductor layer attached to the carrier substrate.... Agent: Infineon Technologies Austria Ag

20120080692 - Display panel, display device, illumination panel and illumination device, and methods of manufacturing display panel and illumination panel: Disclosed herein is a display panel including a mounting substrate in which one or more light-emitting devices each including one or more light-emitting elements are mounted on a circuit substrate; and a transparent substrate disposed to face the light-emitting device side of the mounting substrate, wherein the transparent substrate has... Agent: Sony Corporation

20120080691 - Light emitting diode and making method thereof: An LED includes a substrate, a first P-type semiconductor layer formed on the substrate and a plurality of LED dies arranged on the first P-type semiconductor layer. The LED dies are electrically connected to each other in series. The present invention also relates to a method for making such an... Agent: Advanced Optoelectronic Technology, Inc.

20120080693 - Light emitting diode package and method of making the same: The light emitting diode package of the present invention uses photosensitive materials to form phosphor encapsulations or a phosphor layer, which can be fabricated by means of semiconductor processes in batch. Also, the concentration of phosphors in individual regions can be accurately and easily controlled by a laser printing process... Agent: Touch Micro-system Technology Corporation

20120080694 - Organic el display: Disclosed is a coated type organic EL display wherein the light extraction efficiencies of all organic light-emitting elements are improved even when the organic light-emitting elements have different organic light-emitting layers for respective emission colors. Specifically disclosed is an organic EL display which comprises a substrate, a red organic light-emitting... Agent: Panasonic Corporation

20120080695 - Light emitting diode and method of fabricating the same: Exemplary embodiments of the present invention disclose a light emitting diode (LED) and a method of fabricating the same. The LED includes a substrate, a semiconductor stack arranged on the substrate, the semiconductor stack including an upper semiconductor layer having a first conductivity type, an active layer, and a lower... Agent: Seoul Opto Device Co., Ltd.

20120080696 - Light emitting diode module: An LED module includes a plurality of lighting sources each including a substrate, a first and second lead frames arranged on the substrate, an LED chip electrically connected to the first and the second lead frames, and an encapsulation covering the LED chip. The first lead frame of each of... Agent: Advanced Optoelectronic Technology, Inc.

20120080697 - Light-emitting element having a plurality of contact parts: A light-emitting element includes a supportive substrate; a reflective layer formed on the supportive substrate; a transparent layer formed on the reflective layer; a light-emitting stacked layer formed on the transparent layer; an etching-stop layer formed between the transparent layer and the reflective layer; and a plurality of contact parts... Agent: Epistar Corporation

20120080706 - Chip package and method for forming the same: An embodiment of the invention provides a chip package which includes: a substrate having a surface; a reflective layer partially covering the surface of the substrate; an insulating layer formed on the surface of the substrate and the reflective layer; a conducting layer formed on the insulating layer, wherein at... Agent:

20120080705 - Epoxy resin composition for optical semiconductor device, lead frame obtained using the same for optical semiconductor device, and optical semiconductor device: The present invention relates to an epoxy resin composition for an optical semiconductor device having an optical semiconductor element mounting region and having a reflector that surrounds at least a part of the region, the epoxy resin composition being an epoxy resin composition for forming the reflector, the epoxy resin... Agent: Nitto Denko Corporation

20120080698 - High efficiency light emitting diodes: The present disclosure relates to high efficiency light emitting diode devices and methods for fabricating the same. In accordance with one or more embodiments, a light emitting diode device includes a substrate having one or more recessed features formed on a surface thereof and one or more omni-directional reflectors formed... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120080701 - Light emitting device package: A light emitting device package is provided. The light emitting device package comprises a package body comprising a first cavity, and a second cavity connected to the first cavity; a first lead electrode, at least a portion of which is disposed within the second cavity; a second lead electrode, at... Agent:

20120080709 - Light emitting devices having roughened/reflective contacts and methods of fabricating same: Light emitting devices include an active region of semiconductor material and a first contact on the active region. The first contact is configured such that photons emitted by the active region pass through the first contact. A photon absorbing wire bond pad is provided on the first contact. The wire... Agent: Cree, Inc.

20120080700 - Light emitting diode package and method for manufacturing the same: A light emitting diode package comprises a substrate, a light emitting diode chip, an encapsulating layer and a transparent surrounding layer. The surrounding layer is disposed on the substrate and encompasses the encapsulating layer, wherein the hardness of the surrounding layer is greater than the encapsulating layer. A method for... Agent: Advanced Optoelectronic Technology, Inc.

20120080702 - Light emitting diode package structure and manufacturing method thereof: In one aspect, an LED package structure comprises a fluorescent substrate, a first electrically conductive pattern, a second electrically conductive pattern, at least one electrically conductive element, and an LED chip. The fluorescent substrate has a first surface and a second surface opposite the first surface. The fluorescent substrate comprises... Agent: Everlight Yi-guang Technology (shanghai) Ltd.

20120080703 - Light emitting diode package structure and manufacturing method thereof: An LED package structure comprises a substrate, a first electrically conductive pattern, a second electrically conductive pattern, at least one electrically conductive element, and an LED chip. The substrate has a first surface and a second surface opposite to the first surface. The first electrically conductive pattern is disposed on... Agent: Everlight Yi-guang Technology (shanghai) Ltd.

20120080699 - Lightweight heat sinks and led lamps employing same: A heat sink comprises a heat sink body, a reflective layer disposed over the heat sink body that has reflectivity greater than 90% for light in the visible spectrum, and a light transmissive protective layer disposed over the reflective layer that is light transmissive for light in the visible spectrum.... Agent: Ge Lighting Solutions, LLC

20120080704 - Method of providing a phosphor with a precisely controlled element composition, a phosphor provided by the same, a phosphor, and a light emitting device comprising the said phosphor: h

20120080708 - Phosphor, lighting system and white light emitting diode: The present invention provides a phosphor, a lighting system and a white light emitting diode. The phosphor comprises a compound represented by the formula (1) and Eu as an activator. aM12O-bM2O-cM3O2 (1) wherein, in the formula (1), M1 is at least one selected from the group consisting of Li, Na,... Agent: Sumitomo Chemical Company, Limited

20120080707 - Semiconductor light emitting device and manufacturing method thereof: There is provided a semiconductor light emitting device and method of making the same, having a first conductivity type semiconductor layer; an active layer formed on the first conductivity type semiconductor layer; a second conductivity type semiconductor layer formed on the active layer and including a plurality of holes; and... Agent:

20120080710 - Surface light source device, lighting device, and backlight device: A surface light source device is provided that has high light extraction efficiency and high mechanical strength and can suppress a change in color tone at different viewing angles. To that end, the surface light source device includes: an organic EL element including a luminescent layer; and a light-emitting surface... Agent:

20120080711 - Light emitting device: A light emitting device comprises a case having a space therein, the space defined by an inner bottom surface and an inner side surface of the case, a lead frame housed in the space, and having a bending portion bent along the inner side surface of the case, and a... Agent: Toyoda Gosei Co., Ltd.

20120080713 - Light-emitting device and lighting device provided with the same: A light-emitting device capable of ensuring an electric connection between a light-emitting element and an electrode without generating any problem in practical use, by both connecting methods with a solder and a connector, and a lighting device provided with the light-emitting device are provided. The light-emitting device according to the... Agent:

20120080714 - Light-emitting device, method for manufacturing the same, and electronic apparatus: The present invention provides a light-emitting device including a light-emitting element over a substrate, the light-emitting element is partitioned from an adjacent light-emitting element by a partition wall, the light-emitting element comprising a first electrode, a layer formed over the first electrode, a light-emitting layer formed over the layer and... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120080712 - Method for producing compound semiconductor light-emiting device: A method for producing a compound semiconductor light-emitting device includes depositing on a substrate a compound semiconductor stacked-layer body including a light-emitting layer, depositing a transparent conductive oxide film on the compound semiconductor stacked-layer body, and annealing the transparent conductive oxide film and thereafter cooling the same in a vacuum... Agent: Sharp Kabushiki Kaisha

20120080715 - Semiconductor device: A structure of semiconductor device includes a first semiconductor layer; an intermediate layer on a surface of said first semiconductor layer; a second semiconductor layer on said intermediate layer, wherein said intermediate layer and said second semiconductor layer are integrated to a set of sub-structures; and a semiconductor light emitting... Agent: Advanced Optoelectronic Technology, Inc.

20120080716 - Initial-on scr device for on-chip esd protection: A semiconductor device for electrostatic discharge (ESD) protection comprises a silicon controlled rectifier (SCR) including a semiconductor substrate, a first well formed in the substrate, a second well formed in the substrate, a first p-type region formed in the first well to serve as an anode, and a first n-type... Agent: Industrial Technology Research Institute

20120080717 - Bi-directional back-to-back stacked scr for high-voltage pin esd protection, methods of manufacture and design structures: Bi-directional back-to-back stacked SCRs for high-voltage pin ESD protection, methods of manufacture and design structures are provided. The device includes a symmetrical bi-directional back-to-back stacked silicon controlled rectifier (SCR). An anode of a first of the back-to-back stacked SCR is connected to an input. An anode of a second of... Agent: International Business Machines Corporation

20120080718 - Semiconductor device: The present teachings provide a semiconductor device comprising: an IGBT element region, a diode element region and a boundary region provided between the IGBT element region and the diode element region are formed in one semiconductor substrate. The boundary region comprises a second conductivity type first diffusion region, a first... Agent: Toyota Jidosha Kabushiki Kaisha

20120080719 - Apparatus with photodiode region in multiple epitaxial layers: A CMOS image sensor includes a substrate including silicon, a silicon germanium (SiGe) epitaxial layer formed over the substrate, the SiGe epitaxial layer formed through epitaxial growth and doped with a predetermined concentration level of impurities, an undoped silicon epitaxial layer formed over the SiGe epitaxial layer by epitaxial growth,... Agent: Intellectual Ventures Ii LLC

20120080720 - Method of forming a semiconductor device and semiconductor device: A method of forming a semiconductor device comprises forming a control electrode over a portion of a semiconductor layer, forming recesses extending into the semiconductor layer on opposing sides of the control electrode, and forming doped regions in the semiconductor layer through the recesses. The doped regions form current electrode... Agent: Freescale Semiconductor, Inc.

20120080723 - Fabricating method of semiconductor device and semiconductor device fabricated using the same method: A fabricating method of a semiconductor device includes providing a substrate having a first region and a second region, forming a plurality of first gates in the first region of the substrate, such that the first gates are spaced apart from each other at a first pitch, forming a plurality... Agent:

20120080722 - Method for forming strained semiconductor channel and semiconductor device: A semiconductor device includes: a semiconductor substrate; a SiGe relaxed layer on the semiconductor substrate; an NMOS transistor on the SiGe relaxed layer; and a PMOS transistor on the SiGe relaxed layer, in which the NMOS transistor includes a tensile strained epitaxial layer located on the SiGe relaxed layer or... Agent: Institute Of Microelectronics,chinese Academy Of Sciences

20120080721 - Semiconductor structure and method for making the same: A semiconductor structure includes a recess disposed in a substrate, a non-doped epitaxial layer and a doped epitaxial layer. The non-doped epitaxial layer is disposed on the inner surface of the recess and substantially consists of Si and an epitaxial layer. The non-doped epitaxial layer has a sidewall and a... Agent:

20120080724 - Semiconductor device: A semiconductor device includes a first semiconductor layer, a second semiconductor layer, a two-dimensional carrier gas layer, a first main electrode, a second main electrode, a first gate electrode, and a second gate electrode. The first gate electrode is provided between a part of the first main electrode and a... Agent: Sanken Electric Co., Ltd.

20120080725 - Vertical transistor memory array: A method includes providing a semiconductor wafer having a plurality of pillar structures extending orthogonally from the semiconductor wafer. An electrically conducting interconnect element is deposited onto at least selected vertical pillar transistors and a non-volatile variable resistive memory cell is deposited onto the electrically conducting interconnect layer to form... Agent: Seagate Technology LLC

20120080726 - Solid-state imaging device, method of manufacturing the same, and electronic device: Disclosed herein is a solid-state imaging device including: a semiconductor layer including a photoelectric conversion section receiving incident light and generating a signal charge; and a light absorbing section for absorbing transmitted light transmitted by the photoelectric conversion section and having a longer wavelength than light absorbed by the photoelectric... Agent: Sony Corporation

20120080727 - Micro electro mechanical device and manufacturing method thereof: A micro structure and an electric circuit included in a micro electro mechanical device are manufactured over the same insulating surface in the same step. In the micro electro mechanical device, an electric circuit including a transistor and a micro structure are integrated over a substrate having an insulating surface.... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120080728 - Semiconductor device with junction field-effect transistor and manufacturing method of the same: A semiconductor device with a JFET is disclosed. The semiconductor device includes a trench and a contact embedded layer formed in the trench. A gate wire is connected to the contact embedded layer, so that the gate wire is connected to an embedded gate layer via the contact embedded layer.... Agent: Denso Corporation

20120080729 - Field effect transistor: A lateral field-effect transistor capable of improving switching speed and reducing operationally defective products is provided. A gate wiring has a base, a plurality of fingers protruding from the base, and a connection connecting tips of adjacent fingers. The finger of the gate wiring is arranged between the finger of... Agent: Sumitomo Electric Industries, Ltd.

20120080730 - Semiconductor device with photonics: A semiconductor structure having a transistor region and an optical device region includes a transistor in a first semiconductor layer of the semiconductor structure, wherein the first semiconductor layer is over a first insulating layer, the first insulating layer is over a second semiconductor layer, and the second semiconductor layer... Agent: Freescale Semiconductor, Inc.

20120080732 - Isolation structures for global shutter imager pixel, methods of manufacture and design structures: Pixel sensor cells, e.g., CMOS optical imagers, methods of manufacturing and design structures are provided with isolation structures that prevent carrier drift to diffusion regions. The pixel sensor cell includes a photosensitive region and a gate adjacent to the photosensitive region. The pixel sensor cell further includes a diffusion region... Agent: International Business Machines Corporation

20120080731 - Photodetector isolation in image sensors: A first shallow trench isolation region is disposed in the silicon semiconductor layer laterally adjacent to a photodetector while a second shallow trench isolation region is disposed in the silicon semiconductor layer laterally adjacent to other electrical components in a pixel. The first and second shallow trench isolation regions each... Agent:

20120080733 - Photodetector isolation in image sensors: Shallow trench isolation regions are disposed in an n-type silicon semiconductor layer laterally adjacent to a collection region of a photodetector and laterally adjacent to a charge-to-voltage conversion region. The shallow trench isolation regions each include a trench disposed in the silicon semiconductor layer and a first dielectric structure disposed... Agent:

20120080735 - Semiconductor device and method of manufacturing the same: In the semiconductor device composing MOS transistor on which impurities are added from the surface of a P-type substrate, the region of immediate below a gate layer is the P-type substrate on which the impurities are not added, and first and second MOS devices, having an N-type diffusion layer are... Agent:

20120080734 - Semiconductor memory device: A semiconductor memory device includes a memory cell portion and a peripheral circuit portion. The memory cell portion includes a pillar capacitor with a lower electrode, a dielectric film, and an upper electrode sequentially formed on a side surface of a first insulating portion which is parallel to a predetermined... Agent: Elpida Memory, Inc.

20120080736 - Semiconductor device: An antifuse whose internal written information cannot be analyzed even by utilizing methods to determine whether there is a charge-up in the electrodes. The antifuse includes a gate insulation film, a gate electrode, and a first diffusion layer. A second diffusion layer is isolated from the first diffusion layer by... Agent: Renesas Electronics Corporation

20120080737 - Semiconductor device provided with a non-volatile memory unit and a mems switch: According to one embodiment, a semiconductor device is provided. The semiconductor is provided with a MEMS switch element having a control terminal and a pair of signal terminals, and a non-volatile memory unit having first and second non-volatile semiconductor elements. The first non-volatile semiconductor element has a first source, a... Agent:

20120080738 - Shallow trench isolation for a memory: In some embodiments, a gate structure with a spacer on its side may be used as a mask to form self-aligned trenches in a microelectronic memory, such as a flash memory. A first portion of the gate structure may be used to form the mask, together with sidewall spacers, in... Agent:

20120080740 - Charge trapping dielectric structures: A dielectric structure may be arranged having a thin nitrided surface of an insulator with a charge blocking insulator over the nitrided surface. The insulator may be formed of a number of different insulating materials such as a metal oxide, a metal oxycarbide, a semiconductor oxide, or oxycarbide. In an... Agent:

20120080739 - Nonvolatile programmable logic switch: A nonvolatile programmable logic switch according to an embodiment includes: a memory cell transistor including: a first source region and a first drain region of a second conductivity type formed at a distance from each other in a first semiconductor region of a first conductivity type; a first insulating film,... Agent: Kabushiki Kaisha Toshiba

20120080741 - Semiconductor device and method of manufacturing the same: A semiconductor device includes a device isolation insulating film which is buried in a semiconductor substrate, a gate insulation film which is provided on the semiconductor substrate, a gate electrode which is provided on the gate insulation film, a source region and a drain region which are provided in the... Agent:

20120080744 - Semiconductor device: A semiconductor device has a semiconductor substrate having an upper main surface and a lower main surface. The semiconductor substrate includes a drain layer, a main base region, an underpad base region and a source region. The semiconductor device includes a first main electrode connected to the main base regions... Agent: Mitsubishi Electric Corporation

20120080746 - Semiconductor device and fabrication method thereof: Disclosed herein is a fabrication method of a semiconductor device to order to increase an operation liability of the semiconductor device. A method for fabricating a semiconductor device comprises forming a recess in a semiconductor substrate, forming a word line in a lower part of the recess, oxidizing a top... Agent: Hynix Semiconductor Inc.

20120080742 - Semiconductor device having vertical type transistor: A semiconductor device includes: a first vertical type transistor having a first lower diffusion layer, a first upper diffusion layer, and a gate electrode; a second vertical type transistor having a second lower diffusion layer, a second upper diffusion layer, and a second gate electrode; a gate wiring connected to... Agent: Elpida Memory, Inc.

20120080743 - Semiconductor device with increased channel length and method for fabricating the same: A semiconductor device includes a trench formed in a predetermined portion of a substrate and a first recess region beneath the trench. A field oxide layer is buried into both the trench and the first recess region. An active region is defined by the field oxide layer, having first active... Agent:

20120080745 - Vertical transistor and method for forming the same: A vertical transistor includes a semiconductor substrate provided with a pillar type active pattern over the surface thereof. A first tensile layer is formed over the semiconductor substrate and around the lower end portion of the pillar type active pattern, and a second tensile layer is formed over the upper... Agent: Hynix Semiconductor Inc.

20120080747 - Semiconductor device: A vertical transistor of a semiconductor device has a channel area formed in a vertical direction to a semiconductor substrate. After semiconductor poles corresponding to the length of semiconductor channels and gate electrodes surrounding sidewalls of the semiconductor poles are formed, subsequent processes of forming silicon patterns corresponding to junction... Agent: Hynix Semiconductor Inc.

20120080748 - Trench mosfet with super pinch-off regions: A trench MOSFET with short channel length and super pinch-off regions is disclosed, wherein the super pinch-off regions are implemented by forming at least two type pinch-off regions for punch-through prevention: a first type pinch-off region with a wide mesa width generated between lower portion of two adjacent trenched gates... Agent: Force Mos Technology Co., Ltd.

20120080751 - Mos device with varying contact trench lengths: A semiconductor device is formed on a semiconductor substrate. The device comprises a drain; an epitaxial layer overlaying the drain; a body disposed in the epitaxial layer, having a body top surface and a body bottom surface; a source embedded in the body, extending from the body top surface into... Agent: Alpha & Omega Semiconductor Limited

20120080750 - Semiconductor integrated circuit: A semiconductor integrated circuit includes: a semiconductor substrate comprising a word line decoder region and a memory cell region; a basic word line formed in the memory cell region in a buried gate type; and an additional word line formed to extend from the word line decoder region across the... Agent: Hynix Semiconductor Inc.

20120080749 - Umos semiconductor devices formed by low temperature processing: UMOS (U-shaped trench MOSFET) semiconductor devices that have been formed using low temperature processes are described. The source region of the UMOS structure can be formed before the etch processes that are used to create the trench, allowing low-temperature materials to be incorporated into the semiconductor device from the creation... Agent:

20120080752 - High voltage metal-oxide-semiconductor transistor with stable threshold voltage and related manufacturing method: A high voltage metal-oxide-semiconductor (HVMOS) transistor includes a gate poly, wherein a channel is formed in an area projected from the gate poly in a thickness direction when the HVMOS is activated; two carrier drain drift regions, adjacent to the area projected from the gate poly, wherein at least one... Agent:

20120080753 - Gallium arsenide based materials used in thin film transistor applications: Embodiments of the invention provide a method of forming a group III-V material utilized in thin film transistor devices. In one embodiment, a gallium arsenide based (GaAs) layer with or without dopants formed from a solution based precursor may be utilized in thin film transistor devices. The gallium arsenide based... Agent: Applied Materials, Inc.

20120080755 - Methods for forming gates in gate-last processes and gate areas formed by the same: Methods are provided for forming gates in gate-last processes. The methods may include performing chemical mechanical polishing (CMP) on an interlayer dielectric (ILD) that is on a plurality of dummy gates, each of the plurality of dummy gates including a gate mask in an upper portion thereof, and the CMP... Agent:

20120080754 - Semiconductor device and method of manufacturing semiconductor device: The semiconductor device includes a first transistor including a first impurity layer containing boron or phosphorus, a first epitaxial layer formed above the first impurity layer, a first gate electrode formed above the first epitaxial layer with a first gate insulating film formed therebetween and first source/drain regions, and a... Agent: Fujitsu Semiconductor Limited

20120080756 - Semiconductor device and method for fabricating the same: A semiconductor device includes a high dielectric gate insulating film formed on a substrate, and a metal gate electrode formed on the high dielectric gate insulating film. The metal gate electrode includes a crystalline portion and an amorphous portion. A halogen element is eccentrically located in the amorphous portion.... Agent: Panasonic Corporation

20120080757 - Semiconductor device and method for manufacturing the same: First protective films are formed to cover side surfaces of gate electrode portions. In an nMOS region, an extention implantation region is formed by causing a portion of the first protective film located on the side surface of the gate electrode portion to function as an offset spacer and using... Agent:

20120080758 - Method for fabricating at least three metal-oxide semiconductor transistors having different threshold voltages: At least three metal-oxide semiconductor transistors with different threshold voltages are formed in and above corresponding first, second and third parts of a semiconductor substrate. The second transistor has a lower threshold voltage than the second transistor, and the third transistor has a lower threshold voltage than the second transistor.... Agent: Stmicroelectronics, Inc.

20120080759 - Semiconductor device and method of manufacturing semiconductor device: A first transistor includes a first impurity layer of a first conduction type formed in a first region of a semiconductor substrate, a first epitaxial semiconductor layer formed above the first impurity layer, a first gate insulating film formed above the first epitaxial semiconductor layer, a first gate electrode formed... Agent: Fujitsu Semiconductor Limited

20120080760 - Dielectric structure, transistor and manufacturing method thereof: The present invention discloses a dielectric structure, a transistor and a manufacturing method thereof with praseodymium oxide. The transistor with praseodymium oxide comprises at least a III-V substrate, a gate dielectric layer and a gate. The gate dielectric layer is disposed on the III-V substrate, and the gate is disposed... Agent: National Chiao Tung University

20120080761 - Semiconductor having a high aspect ratio via: A semiconductor device includes a substrate wafer, a dielectric layer overlying the substrate wafer, a patterned conductor layer in the dielectric layer, and a first barrier layer overlying the conductor layer. A silicon top wafer is bonded to the dielectric layer. A via is formed through the top wafer and... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120080763 - Electronic component, electronic device, and method of manufacturing the electronic component: An electronic component includes: a semiconductor element including a circuit; a vibration element; a first electrode arranged on a first surface of the semiconductor element and connected to the circuit and the vibration element arranged on the first surface side; a second electrode arranged on the first surface; a first... Agent: Seiko Epson Corporation

20120080762 - Plating process and apparatus for through wafer features: A method for forming through features in a substrate uses a seed layer deposited over a first substrate, and a second substrate bonded to the seed layer. The features may be formed in the first substrate, by plating a conductive filler material onto the seed layer. The first substrate and... Agent: Innovative Micro Technology

20120080764 - Apparatus and method for microelectromechanical systems device packaging: A MEMS package includes a substrate having an L-shaped cross-section. The substrate includes a vertical portion having a front surface and a back surface, and a horizontal portion protruding from a lower part of the front surface of the vertical portion, wherein the front surface of the vertical portion includes... Agent: Analog Devices, Inc.

20120080765 - Method of damage-free impurity doping for cmos image sensors: A method of fabricating a backside-illuminated pixel. The method includes forming frontside components of the pixel on or in a front side of a substrate, the frontside components including a photosensitive region of a first polarity. The method further includes forming a pure dopant region of a second polarity on... Agent: Omnivision Technologies, Inc.

20120080766 - Image sensing device and fabrication thereof: An image sensing device is disclosed, including an epitaxy layer having the a conductivity type, including a first pixel area corresponding to a first incident light, a second pixel area corresponding to a second incident light, and a third pixel area corresponding to a third incident light, wherein the wavelength... Agent: Himax Imaging, Inc.

20120080767 - Solid-state imaging device, method for manufacturing the same, and electronic apparatus: A method for manufacturing a solid-state imaging device includes: forming pixels that receive incident light in a pixel array area of a substrate; forming pad electrodes in a peripheral area located around the pixel array area of the substrate; forming a carbon-based inorganic film on an upper surface of each... Agent: Sony Corporation

20120080768 - Sheet-molded chip-scale package: Embodiments include but are not limited to apparatuses and systems including a microelectronic device including a die having a first surface and a second surface opposite the first surface, a conductive pillar formed on the first surface of the die, and an encapsulant material encasing the die, including covering the... Agent: Triquint Semiconductor, Inc.

20120080769 - Esd device and method: A semiconductor component and a method for manufacturing the semiconductor component, wherein the semiconductor component includes a transient voltage suppression structure that includes at least two diodes and a Zener diode. In accordance with embodiments, a semiconductor material is provided that includes an epitaxial layer. The at least two diodes... Agent:

20120080770 - Transformer arrangement: A transformer arrangement and a method for producing a transformer arrangement is disclosed.... Agent:

20120080771 - 3d via capacitor with a floating conductive plate for improved reliability: The present invention provides a 3D via capacitor and a method for forming the same. The capacitor includes an insulating layer on a substrate. The insulating layer has a via having sidewalls and a bottom. A first electrode overlies the sidewalls and at least a portion of the bottom of... Agent: International Business Machines Corporation

20120080772 - Semiconductor device and method of manufacturing the same: A semiconductor device includes a substrate, a first single conductor, a single insulator, and a second single conductor. The substrate includes first and second regions located adjacent to each other. The first region has blind holes, each of which has an opening on a front surface of the substrate. The... Agent: Denso Corporation

20120080773 - Switchable memory diodes based on ferroelectric/conjugated polymer heterostructures and/or their composites: An embodiment of the present memory cell a first layer of a chosen conductivity type, and a second layer which includes ferroelectric semiconductor material of the opposite conductivity type, the layers forming a pn junction. The first layer may be a conjugated semiconductor polymer, or may also be of ferroelectric... Agent:

20120080774 - Semiconductor, n-type semiconductor, p-type semiconductor, semiconductor junction device, pn junction device and photoelectric converter: The semiconductor of the present invention has iron sulfide and a forbidden band control element contained in the iron sulfide. The forbidden band control element has a property capable of controlling the forbidden band of iron sulfide on the basis of the number density of the forbidden band control element... Agent: Sharp Kabushiki Kaisha

20120080775 - Method of polishing silicon wafer as well as silicon wafer: The method of polishing a silicon wafer by supplying a polishing solution containing abrasive grains onto a surface of a polishing pad and then relatively sliding the polishing pad to a silicon wafer to polish the surface of the silicon wafer, is characterized in that the number of abrasive grains... Agent:

20120080776 - Semiconductor device and method of manufacturing the same: A semiconductor device includes: element formation regions each including a cell region where a semiconductor element is formed, a termination trench region; and a dicing line region including a groove separating the element formation regions. The termination trench region includes four trenches surrounding four sides of the cell region. Two... Agent: Kabushiki Kaisha Toshiba

20120080778 - Electronic device: A device is prepared using a chemical vapor deposition method and has a patterned thin film on a substrate that is applied using a deposition inhibitor material. The deposition inhibitor material is a hydrophilic polymer that is a neutralized acid having a pKa of 5 or less, wherein at least... Agent:

20120080777 - Triple oxidation on dsb substrate: According to certain embodiments, a semiconductor structure is formed having a gate oxide formed over a semiconductor substrate. The gate oxide is formed as to have three different regions characterized by a different average thickness of gate oxide in each region. A first oxidation process is performed on a semiconductor... Agent: Toshiba America Electronic Components, Inc.

20120080779 - Ultra high selectivity doped amorphous carbon strippable hardmask development and integration: Embodiments of the present invention generally relate to the fabrication of integrated circuits and particularly to the deposition of a boron containing amorphous carbon layer on a semiconductor substrate. In one embodiment, a method of processing a substrate in a processing chamber is provided. The method comprises providing a substrate... Agent: Applied Materials, Inc.

20120080780 - Sem iconductor device having pads and which minimizes defects due to bonding and probing processes: A semiconductor device includes: a semiconductor substrate; a first interlayer insulating film formed over the semiconductor substrate; a pad formed above the first interlayer insulating film; and a plurality of first interconnects spaced apart from each other in a portion of the first interlayer insulating film located below the pad.... Agent: Panasonic Corporation

20120080781 - Delamination resistant device package having raised bond surface and mold locking aperture: A semiconductor package configured to attain a thin profile and low moisture sensitivity. Packages of this invention can include a semiconductor die mounted on a die attachment site of a leadframe and further connected with a plurality of elongate I/O leads arranged about the die attach pad and extending in... Agent: National Semiconductor Corporation

20120080782 - Method of manufacturing layered chip package: A layered chip package includes a main body, and wiring that includes a plurality of wires disposed on a side surface of the main body. The main body includes: a main part including first and second layer portions; and a plurality of first and second terminals that are disposed on... Agent: Headway Technologies, Inc.

20120080783 - Thin flip chip package structure: A thin flip chip package structure comprises a substrate, a chip and a heat dissipation paste, the substrate comprises an insulating layer and a trace layer. The insulating layer comprises a top surface, a bottom surface and a plurality of apertures formed at the bottom surface, wherein the bottom surface... Agent:

20120080784 - Multichip electronic packages and methods of manufacture: A multi-chip electronic package and methods of manufacture are provided. The multi-chip package includes a plurality of chips mounted on a chip carrier. The multi-chip package further includes a lid mounted on the chip carrier using a bonding material or compression seal, and at least one single piston extending from... Agent: International Business Machines Corporation

20120080785 - Semiconductor cooling apparatus: In some embodiments, a semiconductor cooling apparatus includes a monolithic array of cooling elements. Each cooling element of the monolithic array of cooling elements is configured to thermally couple to a respective semiconductor element of an array of semiconductor elements. At least two of the semiconductor elements have a different... Agent: Raytheon Company

20120080786 - Electronic component and method for manufacturing the same: An electronic component including a wiring board having interlayer insulation layers and conductive patterns, the wiring board having a first surface and a second surface on the opposite side of the first surface, multiple first bumps formed on a first conductive pattern positioned on the first surface of the wiring... Agent: Ibiden Co., Ltd.

20120080787 - Electronic package and method of making an electronic package: An electrical package and a method of forming the electrical package, where the electrical package has a substrate with a frontside, an intergrated circuit coupled to the frontside of the substrate, and at least one non-collapsible metal connector created on the frontside of the first substrate.... Agent: Qualcomm Incorporated

20120080789 - Semiconductor chip and mounting structure of the same (as amended): Provided is a semiconductor chip having a narrowed pitch between terminals, the chip being capable of suppressing occurrence of poor connection between the chip and a substrate on which the chip is mounted. In an LSI chip including an input bump group, which is composed of a plurality of input... Agent: Sharp Kabushiki Kaisha

20120080788 - Semiconductor device having multilayer wiring structure and manufacturing method of the same: Disclosed is a semiconductor device 1 comprising: a semiconductor chip 10; a multilayer wiring structure 30 stacked on the semiconductor chip 10; and an electronic component 60,80 embedded in the multilayer wiring structure 30.... Agent: Casio Computer Co., Ltd.

20120080790 - Apparatus and method for uniform metal plating: Apparatus and methods for uniform metal plating onto a semiconductor wafer, such as GaAs wafer, are disclosed. One such apparatus can include an anode and a showerhead body. The anode can include an anode post and a showerhead anode plate. The showerhead anode plate can include holes sized to dispense... Agent: Skyworks Solutions, Inc.

20120080792 - Metal interconnection structure and method for forming metal interlayer via and metal interconnection line: There is provided a method for forming a metal interlayer via, comprising: forming a seed layer on a first dielectric layer and a first metal layer embedded in the first dielectric layer; forming a mask pattern on the seed layer to expose a portion of the seed layer covering some... Agent: Institute Of Microelectronics, Chinese Academy Of Sciences

20120080794 - Method for producing a metallization having two multiple alternating metallization layers for at least one contact pad and semiconductor wafer having said metallization for at least one contact pad: The invention relates to a method for producing a metallization for at least one contact pad and a semiconductor wafer having metallization for at least one contact pad. The invention relates to a metallization (and a semiconductor wafer having corresponding metallization) and to a method for the production thereof that... Agent: Forschungsverbund Berlin E.v.

20120080791 - Semiconductor structure and method for making same: One or more embodiments relate to a method of forming an electronic device, comprising: providing a workpiece; forming a first barrier layer over the workpiece; forming an intermediate conductive layer over the first barrier layer; forming a second barrier layer over the intermediate conductive layer; forming a seed layer over... Agent:

20120080793 - Subtractive patterning to define circuit components: Certain embodiments pertain to local interconnects formed by subtractive patterning of blanket layer of tungsten or other conductive material. The grain sizes of tungsten or other deposited metal can be grown to relatively large dimensions, which results in increased electrical conductivity due to, e.g., reduced electron scattering at grain boundaries... Agent:

20120080796 - Device: According to one embodiment, a device includes an insulating layer with a first trench, a first interconnect layer in the first trench, the first interconnect layer including copper and includes a concave portion, and a first graphene sheet on an inner surface of the concave portion.... Agent: Kabushiki Kaisha Toshiba

20120080797 - Metal wiring structures for uniform current density in c4 balls: In one embodiment, a sub-pad assembly of metal structures is located directly underneath a metal pad. The sub-pad assembly includes an upper level metal line structure abutting the metal pad, a lower level metal line structure located underneath the upper level metal line structure, and a set of metal vias... Agent: International Business Machines Corporation

20120080795 - Semiconductor structure and method for making same: One or more embodiments relate to a method for forming a semiconductor structure, comprising: providing a workpiece; forming a dielectric barrier layer over the workpiece; forming an opening through the dielectric barrier layer; forming a seed layer over the dielectric barrier layer and within the dielectric barrier layer opening; and... Agent:

20120080798 - Memory devices having contact features: Annular, linear, and point contact structures are described which exhibit a greatly reduced susceptibility to process deviations caused by lithographic and deposition variations than does a conventional circular contact plug. In one embodiment, a standard conductive material such as carbon or titanium nitride is used to form the contact. In... Agent: Round Rock Research, LLC

20120080799 - Semiconductor module comprising an insert and method for producing a semiconductor module comprising an insert: A power semiconductor module is fabricated by providing a base with a metal surface and an insulating substrate comprising an insulation carrier having a bottom side provided with a bottom metallization layer. An insert exhibiting a wavy structure is provided. The insert is positioned between the insulation carrier and metal... Agent: Infineon Technologies Ag

20120080800 - Power module and method for manufacturing the same: Provided is a power module that prevents a deterioration of reliability of bonded portions of aluminum wires, and enables a high-temperature operation of a Si or SiC device. A power module according to the present invention includes: insulating substrates arranged in a case; power elements bonded on the insulating substrates;... Agent: Mitsubishi Electric Corporation

20120080801 - Semiconductor device and electronic component module using the same: A semiconductor device includes a circuit board having an element mounting area, connecting pads positioned in the same surface side as the element mounting area and external connectors to be connected with the connecting pads, respectively; and a semiconductor element mounted on the element mounting area of the circuit board... Agent: Kabushiki Kaisha Toshiba

20120080804 - Electronic device including interconnects with a cavity therebetween and a process of forming the same: A process of forming an electronic device can include providing a first interconnect over a substrate having a primary surface, depositing a first insulating layer over the first interconnect, and patterning the first insulating layer to define an opening extending towards the first interconnect. The process can also include depositing... Agent: Freescale Semiconductor, Inc.

20120080803 - Method of manufacturing a semiconductor component and structure: A semiconductor component and methods for manufacturing the semiconductor component that includes a three dimensional helically shaped common mode choke. In accordance with embodiments, a transient voltage suppression device may be coupled to the monolithically integrated common mode choke.... Agent:

20120080805 - Semiconductor device and method of manufacturing the same: A semiconductor device according to the invention includes a first Cu interconnect and a first barrier insulating film. a The first barrier insulating film is provided on the first Cu interconnect, and prevents Cu from being diffused from the first Cu interconnect. In addition, the semiconductor device includes a second... Agent: Tri Chemical Laboratories Inc.

20120080802 - Through silicon via in n+ epitaxy wafers with reduced parasitic capacitance: A semiconductor device includes an epitaxy layer formed on semiconductor substrate, a device layer formed on the epitaxy layer, a trench formed within the semiconductor substrate and including a dielectric layer forming a liner within the trench and a conductive core forming a through-silicon via conductor, and a deep trench... Agent: International Business Machines Corporation

20120080807 - Off-chip vias in stacked chips: A microelectronic assembly includes first and second stacked microelectronic elements, each having spaced apart traces extending along a front face and beyond at least a first edge thereof. An insulating region can contact the edges of each microelectronic element and at least portions of the traces of each microelectronic element... Agent: Tessera, Inc.

20120080806 - Semiconductor package: A semiconductor package includes a first package including a first substrate and at least one first semiconductor chip mounted on the first substrate, a redistribution wiring layer provided on the first package and including a connection pad, a bonding pad electrically connected to the connection pad and a dummy bonding... Agent:

20120080808 - Adhesive composition, process for producing the same, adhesive film using the same, substrate for mounting semiconductor and semiconductor device: Disclosed is an adhesive composition which includes (a) an epoxy resin, (b) a curing agent and (c) a polymer compound incompatible with said epoxy resin, and further optionally includes (d) a filler and/or (e) a curing accelerator. Also disclosed are a process for producing an adhesive composition, including mixing (a)... Agent:

20120080809 - Resin composition for encapsulating semiconductor and semiconductor device: Disclosed is a resin composition for encapsulating a semiconductor containing a curing agent, an epoxy resin (B) and an inorganic filler (C), wherein the curing agent is a phenol resin (A) having a predetermined structure. Also disclosed is a semiconductor device obtained by encapsulating a semiconductor element with a cured... Agent:

20120080810 - Semiconductor device and manufacturing method of semiconductor device: The present invention provides a thin and bendable semiconductor device utilizing an advantage of a flexible substrate used in the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device has at least one surface covered by an insulating layer which serves as a substrate for protection.... Agent: Semiconductor Energy Laboratory Co., Ltd.