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Active solid-state devices (e.g., transistors, solid-state diodes) March listing by industry category 03/12

20120074367 - Counter doping compensation methods to improve diode performance: A method of forming a memory cell is provided, the method including forming a diode including a first region having a first conductivity type, counter-doping the diode to change the first region to a second conductivity type, and forming a memory element coupled in series with the diode. Other aspects... Agent:

20120074369 - Nonvolatile memory apparatus, nonvolatile memory element, and nonvolatile memory element array: A nonvolatile memory apparatus includes a first electrode, a second electrode, a variable resistance layer, a resistance value of the variable resistance layer reversibly varying between a plurality of resistance states based on an electric signal applied between the electrodes. The variable resistance layer includes at least a tantalum oxide,... Agent: Panasonic Corporation

20120074370 - Phase change memory structures and methods: Methods, devices, and systems associated with phase change memory structures are described herein. One or more embodiments of the present disclosure can reduce thermal crosstalk associated with phase change memory cells, which can provide various benefits including improved data reliability and retention and decreased read and/or write times, among various... Agent: Micron Technology, Inc.

20120074368 - Semiconductor memory device and manufacturing method thereof: A semiconductor memory device having a diode and a transistor connected in series, which prevents carriers from going from the diode into the transistor, thereby reducing the possibility of transistor deterioration. A structure to annihilate carriers from the diode is provided between a channel layer of the transistor and a... Agent: Hitachi, Ltd.

20120074371 - Resistance variable memory device with nanoparticle electrode and method of fabrication: A chalcogenide-based programmable conductor memory device and method of forming the device, wherein a nanoparticle is provided between an electrode and a chalcogenide glass region. The method of forming the nanoparticle utilizes a template over the electrode or random deposition of the nanoparticle.... Agent:

20120074374 - Conductive path in switching material in a resistive random access memory device and control: A non-volatile memory device structure. The device structure includes a first electrode, a second electrode, a resistive switching material comprising an amorphous silicon material overlying the first electrode, and a thickness of dielectric material having a thickness ranging from 5 nm to 10 nm disposed between the second electrode and... Agent: Crossbar, Inc.

20120074373 - Electronic devices, memory devices and memory arrays: Some embodiments include electronic devices having two capacitors connected in series. The two capacitors share a common electrode. One of the capacitors includes a region of a semiconductor substrate and a dielectric between such region and the common electrode. The other of the capacitors includes a second electrode and ion... Agent:

20120074372 - Memristors with an electrode metal reservoir for dopants: A memristor includes a first electrode of a nanoscale width; a second electrode of a nanoscale width; and an active region disposed between the first and second electrodes. The active region has a both a non-conducting portion and a source of dopants portion induced by electric field. The non-conducting portion... Agent:

20120074376 - Nonvolatile memory elements with metal deficient resistive switching metal oxides: Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed by depositing a metal-containing material on a silicon-containing material. The metal-containing material may be oxidized to form a resistive-switching metal oxide. The silicon in the silicon-containing material reacts with the metal in... Agent: Intermolecular, Inc.

20120074377 - Semiconductor memory: Manufacturing processes for phase change memory have suffered from the problem of chalcogenide material being susceptible to delamination, since this material exhibits low adhesion to high melting point metals and silicon oxide films. Furthermore, chalcogenide material has low thermal stability and hence tends to sublime during the manufacturing process of... Agent: Renesas Electronics Corporation

20120074375 - Variable resistance nonvolatile storage device: The variable resistance nonvolatile storage device includes a memory cell (300) that is formed by connecting in series a variable resistance element (309) including a variable resistance layer (309b) which reversibly changes based on electrical signals each having a different polarity and a transistor (317) including a semiconductor substrate (301)... Agent:

20120074378 - Memory element having elastically deformable active region: A memory element is provided that includes a first electrode, a second electrode, and an active region disposed between the first electrode and the second electrode, wherein at least a portion of the active region comprises an elastically deformable material, and wherein deformation of the elastically deformable material causes said... Agent:

20120074383 - Device of light-emitting diode: A LED device is provided. The LED device has a conductive carrier substrate, a light-emitting structure, a plurality of pillar structures, a dielectric layer, a first electrode and a second electrode. The light-emitting structure is located on the conductive carrier substrate. The pillar structures are located on the light-emitting structure.... Agent: Industrial Technology Research Institute

20120074382 - Light emitting diode and method for manufacture of the same: Disclosed is a light emitting device. The light emitting device includes a substrate, a semiconductor layer on the substrate, and an electrode on the semiconductor layer, wherein the substrate has at least one side surface having a predetermined tilt angle with respect to a bottom surface of the substrate, wherein... Agent:

20120074379 - Light-emitting element and the manufacturing method thereof: A light-emitting element includes: a substrate being a monocrystalline structure, comprising a plurality of recesses; and a plurality of first light-emitting stacks formed in the recesses respectively.... Agent: Epistar Corporation

20120074384 - Protection for the epitaxial structure of metal devices: Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased... Agent:

20120074381 - Re-emitting semiconductor construction with enhanced extraction efficiency: A stack of semiconductor layers (310) forms a re-emitting semiconductor construction (RSC). The stack (310) includes an active region (316) that converts light at a first wavelength to light at a second wavelength, the active region (316) including at least one potential well. The stack (310) also includes an inactive... Agent:

20120074380 - White light emitting diode: A white light emitting diode (LED) and method for forming the white LED are provided, wherein a semiconductor material is formed directly with a epitaxial method on a GaN epitaxial structure. The semiconductor material is a doped II-VI semiconductor compound with a broad FWHM (Full Width at Half Maximum) compared... Agent: Chung Yuan Christian University

20120074385 - Semiconductor devices and methods of manufacturing the same: A semiconductor device includes a substrate, a buffer layer on the substrate, and a plurality of nitride semiconductor layers on the buffer layer. The semiconductor device further includes at least one masking layer and at least one inter layer between the plurality of nitride semiconductor layers. The at least one... Agent: Samsung Electronics Co., Ltd.

20120074386 - Non-planar quantum well device having interfacial layer and method of forming same: Techniques are disclosed for forming a non-planar quantum well structure. In particular, the quantum well structure can be implemented with group IV or III-V semiconductor materials and includes a fin structure. In one example case, a non-planar quantum well device is provided, which includes a quantum well structure having a... Agent:

20120074387 - Microelectronic transistor having an epitaxial graphene channel layer: The present disclosure relates to the field of microelectronic transistor fabrication and, more particularly, to forming a graphene layer as a channel layer for a microelectronic transistor.... Agent:

20120074391 - Display device: A pixel unit having two or more pixels different in emission color is provided with lenses in such a manner that the difference of the angular dependence of brightness in organic EL elements for every emission color of the pixels becomes small.... Agent: Canon Kabushiki Kaisha

20120074396 - Electroactive materials: p

20120074390 - Light-emitting element and electronic device: An object is to provide a light-emitting element with high emission efficiency which includes a novel carbazole derivative that has a wide energy gap and can be used for a transport layer or a host material in a light-emitting element. A carbazole derivative in which the 4-position of dibenzothiophene or... Agent:

20120074389 - Metal complex compound and organic light emitting diode device including the same:

20120074398 - Organic el illuminant, organic el illuminating device, and method for fabricating organic el illuminant: An organic EL illuminant (20) includes a first electrode (22), an organic EL layer (23), and a second electrode (24) which are sequentially stacked on a supporting base (21), wherein when a side in which the supporting base (21) is provided is one side, and a side in which the... Agent: Sharp Kabushiki Kaisha

20120074397 - Organic electroluminescence display device and manufacturing method thereof: An organic electroluminescence display includes a first electrode and an auxiliary wire each either on or in a substrate. A luminescent layer is over the first electrode, and a hole transport layer is between the luminescent layer and the first electrode. The hole transport layer extends from over the first... Agent: Panasonic Corporation

20120074395 - Organic electroluminescent element: Provided is an organic EL device, including: an anode; a cathode; and an organic thin-film layer provided between the anode and the cathode, in which: the organic thin-film layer has a light emitting layer containing a host material and a light emitting material, and a hole transporting layer; and the... Agent: Idemitsu Kosan Co., Ltd.

20120074388 - Organic light-emitting display device and method of manufacturing the same: In an organic light-emitting display device and a method of manufacturing the same, the organic light-emitting display device includes: a first insulating layer, a transparent conductive layer, and a second insulating layer which are sequentially formed on a substrate; a thin film transistor including an active layer formed under the... Agent: Samsung Mobile Display Co., Ltd.

20120074394 - Polycyclic aromatic molecular semiconductors and related compositions and devices: Disclosed are new semiconductor materials prepared from polycyclic aromatic compounds. Such compounds can exhibit high carrier mobility and/or good current modulation characteristics. In addition, the compounds of the present teachings can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.... Agent:

20120074393 - Semiconductors based on diketopyrrolopyrroles: s

20120074392 - Tandem white oled: Organic electroluminescent devices and components containing the organic electroluminescent devices are provided herein. The organic electroluminescent devices include a substrate, a first light emitting unit, a second light emitting unit, a first electrode, and a second electrode. The light emitting units are positioned between the first and second electrode. The... Agent: Novaled Ag

20120074399 - Method of making oxide thin film transistor array, and device incorporating the same: Certain example embodiments relate to methods of making oxide thin film transistor arrays (e.g., IGZO, amorphous or polycrystalline ZnO, ZnSnO, InZnO, and/or the like), and devices incorporating the same. Blanket layers of an optional barrier layer, semiconductor, gate insulator, and/or gate metal are disposed on a substrate. These and/or other... Agent: Guardian Industries Corp.

20120074400 - Multiple edge enabled patterning: Provided is an alignment mark having a plurality of sub-resolution elements. The sub-resolution elements each have a dimension that is less than a minimum resolution that can be detected by an alignment signal used in an alignment process. Also provided is a semiconductor wafer having first, second, and third patterns... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120074402 - Packaging structure: This invention relates to a packaging structure and method for manufacturing the packaging structure. The packaging structure comprises a substrate film, a plurality of chips, a compound resin layer and a support layer. The substrate film is formed with circuits having a plurality of terminals exposed from a solder mask.... Agent:

20120074401 - Test pattern for detecting piping in a memory array: A method of detecting manufacturing defects at a memory array may include disposing an active area of a first width in communication with a first conductive member of the memory array to define a grounded conductive member, disposing an isolation structure of a second width in communication with a second... Agent: Macronix International Co., Ltd.

20120074403 - Method for growing gan crystal and gan crystal substrate: The present invention is to provide GaN crystal growing method for growing a GaN crystal with few stacking faults on a GaN seed crystal substrate having a main surface inclined at an angle of 20° to 90° from the (0001) plane, and also to provide a GaN crystal substrate with... Agent: Sumitomo Electric Industries, Ltd.

20120074405 - Process for the simultaneous deposition of crystalline and amorphous layers with doping: One embodiment of the present invention relates to method for the concurrent deposition of multiple different crystalline structures on a semiconductor body utilizing in-situ differential epitaxy. In one embodiment of the present invention a preparation surface is formed, resulting in two distinct crystalline regions, a monocrystalline silicon substrate region and... Agent: Infineon Technologies Ag

20120074404 - Supporting substrate, bonded substrate, method for manufacturing supporting substrate, and method for manufacturing bonded substrate: Provided is a supporting substrate (30) to be bonded on a single crystalline wafer composed of a single crystalline body. The supporting substrate is provided with a silicon carbide polycrystalline substrate (10) composed of a silicon carbide polycrystalline body, and a coat layer (20) deposited on the silicon carbide polycrystalline... Agent: Bridgestone Corporation

20120074406 - Photosensor: A photosensor includes a photosensor array in which plural photosensor pixels are arranged in a matrix form and a backlight arranged below the photosensor array. The photosensor array includes a surface light-shielding film (for example, Al film), and the surface light-shielding film includes an incident hole through which light from... Agent: Hitachi Displays, Ltd.

20120074410 - Fused bithiophene-vinylene polymers: A polymer comprising repeating units A and optionally repeating units B wherein Z=S, Se, N—R and O; W is at each occurrence independently a monocyclic or polycylic moiety optionally substituted with 1-4 Ra groups; Y, at each occurrence, is independently a divalent C1-6 alkyl group, a divalent C1-6 haloalkyl group,... Agent: Basf Se

20120074409 - Light emitting device and electronic device: A light emitting device includes: a light emitting element including a first electrode, a second electrode opposed to the first electrode, and a light emitting layer provided between the first electrode and the second electrode; a capacitor having a third electrode formed in a position overlapping the light emitting element... Agent: Casio Computer Co., Ltd.

20120074408 - Organic light emitting display device and method of manufacturing the same: An organic light emitting display device includes: a thin-film transistor (TFT) including an active layer, a gate electrode including a gate bottom electrode and a gate top electrode, a source electrode, and a drain electrode; an organic electroluminescent (EL) device electrically connected to the TFT and including a stack of... Agent:

20120074407 - Semiconductor device and method for manufacturing the same: An object is to provide a semiconductor device having a novel structure in which a transistor including an oxide semiconductor and a transistor including a semiconductor material other than an oxide semiconductor are stacked. The semiconductor device includes a first transistor, an insulating layer over the first transistor, and a... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120074416 - Liquid crystal display and panel therefor: A thin film transistor array panel is provided, which includes: gate lines formed on an insulating substrate; data lines insulated from the gate lines and intersecting the gate lines; first pixel electrodes disposed on pixel areas defined by intersections of the gate lines and the data lines; first thin film... Agent: Samsung Electronics Co., Ltd.

20120074415 - Liquid crystal display device: Provided is a liquid crystal display device, in which: the gate lines include a first gate line and a second gate line for respectively outputting the scanning signals at two different scanning timings for each of scanning lines; and a unit pixel for color display, constituted by three pixels corresponding... Agent: Hitachi Displays, Ltd.

20120074411 - Organic light emitting diode display and manufacturing method thereof: Making an OLED display, includes forming a first storage plate and a gate insulating layer covering the first storage plate on a substrate; sequentially forming a second storage plate covering the first storage plate and a capacitor intermediate in the gate insulating layer; forming a first doping region by injecting... Agent:

20120074414 - Organic light emitting diode display device and method of manufacturing the same: An organic light emitting diode display device and a method of manufacturing the same are disclosed. The organic light emitting diode display device comprises: a substrate; an active layer disposed on the substrate; a first insulating layer disposed on the active layer; a gate electrode disposed on the first insulating... Agent: Samsung Mobile Display Co., Ltd.

20120074412 - Organic light-emitting display device and method of manufacturing the same: In an organic light-emitting display device and a method of manufacturing the same, the organic light-emitting display device comprises: an active layer of a thin film transistor which includes a semiconductor material, and which is formed on a substrate; a lower electrode of a capacitor which includes a semiconductor material... Agent: Samsung Mobile Display Co., Ltd.

20120074413 - Organic light-emitting display device and method of manufacturing the same: An organic light-emitting display device includes an active layer of a thin film transistor (TFT) formed on a substrate; a gate electrode of the TFT, wherein a first gate electrode including a transparent conductive material, a first insulating layer, and a second gate electrode are sequentially stacked; a pixel electrode... Agent: Samsung Mobile Display Co. Ltd.

20120074417 - Method of bonding wafers: A method of bonding wafers with an aluminum-germanium bond includes forming an aluminum layer on a first wafer, and a germanium layer on a second wafer, and implanting the germanium layer with non-germanium atoms prior to forming a eutectic bond at the aluminum-germanium interface. The wafers are aligned to a... Agent: Analog Devices, Inc.

20120074418 - Semiconductor device: NTFT of the present invention has a channel forming region, n-type first, second, and third impurity regions in a semiconductor layer. The second impurity region is a low concentration impurity region that overlaps a tapered potion of a gate electrode with a gate insulating film interposed therebetween, and the impurity... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120074419 - Light emitting device and electronic equipment: A display device capable of keeping the luminance constant irrespective of temperature change is provided as well as a method of driving the display device. A current mirror circuit composed of transistors is placed in each pixel. A first transistor and a second transistor of the current mirror circuit are... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120074423 - El display panel, el display apparatus, and method of manufacturing el display panel: An EL display panel includes an organic EL device and a thin film semiconductor unit. The organic EL device includes a lower electrode, an organic light-emitting layer, and an upper electrode. The thin film semiconductor unit includes a first gate electrode, a gate insulating film, a first source electrode, a... Agent: Panasonic Corporation

20120074420 - Organic light emitting diode display and manufacturing method thereof: An organic light emitting diode (OLED) display includes: a substrate; a semiconductor layer on the substrate; a gate insulating layer covering the semiconductor layer; a gate electrode formed in the gate insulating layer and overlapping the semiconductor layer; a pixel electrode formed in a pixel area over the gate insulating... Agent:

20120074421 - Thin-film transistor array device, el display panel, el display device, thin-film transistor array device manufacturing method, el display panel manufacturing method: A thin-film transistor array device includes a passivation film above first and second bottom gate transistors. A source wire is below the passivation film. A gate wire and a relay electrode are above the passivation film. The gate wire is electrically connected to a gate electrode of the first transistor... Agent: Panasonic Corporation

20120074422 - Thin-film transistor array device, el display panel, el display device, thin-film transistor array device manufacturing method, el display panel manufacturing method: A thin-film transistor array device includes a passivation film above first and second bottom gate transistors. A gate wire is below the passivation film. A source wire and a relay wire are above the passivation film. The source wire is electrically connected to a source electrode of the first transistor... Agent: Panasonic Corporation

20120074426 - Field-effect transistor: A field-effect transistor includes a carrier transport layer made of nitride semiconductor, a gate electrode having first and second sidewall surfaces on first and second sides, respectively, an insulating film formed directly on the gate electrode to cover at least one of the first and second sidewall surfaces, first and... Agent: Fujitsu Limited

20120074424 - Gallium nitride based semiconductor devices and methods of manufacturing the same: Gallium nitride (GaN) based semiconductor devices and methods of manufacturing the same. The GaN-based semiconductor device may include a conductive heat dissipation substrate (that is, a thermal conductive substrate); an GaN-based multi-layer arranged on the heat dissipation substrate; and a Schottky electrode arranged on the GaN-based multi-layer. While such a... Agent:

20120074425 - Growth of reduced dislocation density non-polar gallium nitride: Lateral epitaxial overgrowth (LEO) of non-polar gallium nitride (GaN) films results in significantly reduced defect density.... Agent: The Regents Of The University Of California

20120074427 - Method for manufacturing a layer of gallium nitride or gallium and aluminum nitride: The present invention relates to a crack-free monocrystalline nitride layer having the composition AlxGa1-xN, where 0≦x≦0.3, and a substrate that is likely to generate tensile stress in the nitride layer. The structure successively includes the substrate; a nucleation layer; a monocrystalline intermediate layer having a selected thickness on the nucleation... Agent: S.o.i.tec Silicon On Insulator Technologies

20120074429 - Growth of non-polar m-plane iii-nitride film using metalorganic chemical vapor deposition (mocvd): A method of growing non-polar m-plane III-nitride film, such as GaN, AlN, AlGaN or InGaN, wherein the non-polar m-plane III-nitride film is grown on a suitable substrate, such as an m-SiC, m-GaN, LiGaO2 or LiAlO2 substrate, using metalorganic chemical vapor deposition (MOCVD). The method includes performing a solvent clean and... Agent: The Regents Of The University Of California

20120074428 - Semiconductor module including a switch and non-central diode: A semiconductor module having one or more silicon carbide diode elements mounted on a switching element is provided in which the temperature rise is reduced by properly disposing each of the diode elements on the switching element, to thereby provide a thermal dissipation path for the respective diode elements. The... Agent: Mitsubishi Electric Corporation

20120074430 - Radiating substrate and method for manufacturing the radiating substrate, and luminous element package with the radiating substrate: Disclosed herein is a radiating substrate radiating heat generated from a predetermined heating element to the outside. The radiating substrate includes polymer resins and graphenes distributed in the polymer resins.... Agent: Samsung Electro-mechanics Co., Ltd.

20120074431 - Sapphire substrate and semiconductor: The sapphire substrate has a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device and comprising a plurality of projections of the principal surface, wherein an outer periphery of a bottom surface of each of the projections has at least one depression. This depression... Agent: Nichia Corporation

20120074433 - Electronic apparatus: An electronic apparatus is provided that includes a number of first components on a first substrate and a number of second components on a second substrate. A lamination material that includes a conducting material is placed between the first components and the second components. Any one first component can couple... Agent:

20120074439 - Flat panel display and method for making the same: A flat panel display includes a thin film transistor formed on a substrate; a planarization layer formed on the thin film transistor; a first electrode layer formed on the planarization layer and electrically connected with the thin film transistor through the via hole formed in the planarization layer; a pixel... Agent: Samsung Mobile Display Co., Ltd.

20120074440 - Illumination device, display device, and television receiver: A backlight unit (49) of a display device (69) having a liquid crystal display panel (59) is provided with a chassis (41), a diffusion plate (43) supported by the chassis, and a light source which irradiates the diffusion plate with light. The light source is constructed by combining a plurality... Agent: Sharp Kabushiki Kaisha

20120074432 - Led package module and manufacturing method thereof: A light emitting diode (LED) package module and the manufacturing method thereof are presented. A plurality of LEDs and a plurality of semiconductor elements are disposed on a silicon substrate, and then a plurality of lenses is formed above the positions of the plurality of the LEDs, and the plurality... Agent: Amtran Technology Co., Ltd

20120074436 - Led unit having self-connecting leads: An LED unit includes a plurality of LEDs connected to each other and a plate supporting the LEDs. Each LED includes a base, a chip mounted on the base, a pair of leads fixed to the base and electrically connected to the chip and an encapsulant sealing the chip. The... Agent: Advanced Optoelectronic Technology, Inc.

20120074437 - Led unit having uniform light emission: An LED unit includes a plurality of LEDs connected to each other and a plate supporting the LEDs. Each LED includes a base, a chip mounted on the base, a pair of leads fixed to the base and electrically connected to the chip and an encapsulant sealing the chip. The... Agent: Advanced Optoelectronic Technology, Inc.

20120074434 - Light emitting device package and lighting apparatus using the same: Disclosed is a light emitting device package, which is free from thermal degradation by preventing reactions between moisture and light or between moisture and heat. The light emitting device package includes a light emitting device, a package body supporting the light emitting device, an electrode provided on the package body... Agent:

20120074438 - Method for manufacturing light emitting device, light emitting device, light emitting element substrate, and quality management method: A method for manufacturing a light emitting device includes forming a plurality of light emitting elements on a light emitting element substrate. an identification portion is formed on each of the light emitting elements to allow a pertinent light emitting element to be distinguishable from other light emitting elements. The... Agent:

20120074435 - Organic light emitting display: An organic light emitting display is disclosed. In one embodiment, the display includes 1) a substrate, 2) a plurality of pixels formed on the substrate, wherein each of the pixels comprises at least one circuit region including i) a first light emission area, ii) a second light emission area iii)... Agent: Samsung Mobile Display Co., Ltd.

20120074441 - Wafer-level light emitting diode package and method of fabricating the same: Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes... Agent: Seoul Semiconductor Co., Ltd.

20120074442 - Light emitting diode module: A light emitting diode module having improved luminous efficiency is provided. The light emitting diode module includes: a light emitting chip; a phosphor layer formed of phosphor materials emitting light having a wavelength longer than the light emitted from the light emitting chip using light emitted from the light emitting... Agent: Samsung Electro-mechannics Co., Ltd.

20120074443 - Led package structure: An LED package structure includes a base, an LED chip, a frame, and a microstructure lens. The LED chip is arranged on the base. The microstructure lens is arranged on the LED chip, and is a first-order optical lens being subject to surface optical microstructure treatment. The frame is provided... Agent: Forward Electronics Co., Ltd.

20120074444 - Light emitting device and manufacturing method thereof: The disclosure provides a light emitting device comprising a light source and a reflector, having specular ink, surrounding the light source.... Agent: Advanced Optoelectronic Technology, Inc.

20120074448 - Light emitting device including a photonic crystal and a luminescent ceramic: A semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region and a photonic crystal formed within or on a surface of the semiconductor structure is combined with a ceramic layer which is disposed in a path of light emitted by the light emitting... Agent: Koninklijke Philips Electronics N.v.

20120074447 - Light emitting diode element: A light emitting diode element having a light emitting diode; and a glass covering sealing the light emitting diode is provided. The glass of the covering consists essentially of from 30 to 70 mol % of SnO, from 15 to 50 mol % of P2O5, from 0.1 to 20 mol... Agent: Asahi Glass Company, Limited

20120074445 - Light emitting element housing package: A light emitting element housing package comprises a ceramic substrate on which a light emitting element is mounted, and a wiring pattern that is formed on the ceramic substrate and to which a light emitting element chip is electrically connected, wherein a white thin film layer formed from a sintered... Agent: Toyoda Gosei Co., Ltd.

20120074450 - Optical gel member, assembling method of optical device and optical device using the same: l

20120074446 - Phosphor sheet, light-emitting device having the phosphor sheet and method of manufacturing the same: Disclosed herein is a light emitting device including: a substrate; a light emitting diode (LED) chip disposed on the substrate; and a phosphor sheet disposed on an upper portion of the LED chip and including alignment members formed on a lower surface thereof. The alignment members contact the LED chip,... Agent: Seoul Semiconductor Co., Ltd.

20120074449 - Quantum dot-metal oxide complex, method of preparing the same, and light-emitting device comprising the same: Provided is a quantum dot-metal oxide complex including a quantum dot and a metal oxide forming a 3-dimensional network with the quantum dot. In the quantum dot-metal oxide complex, the quantum dot is optically stable without a change in emission wavelength band and its light-emitting performance is enhanced.... Agent: Samsung Led Co., Ltd.

20120074451 - Lead frame structure, a packaging structure and a lighting unit thereof: A lead frame structure, a packaging structure and a lighting unit are disclosed. The lead frame structure includes at least two first lead frame units having a space therebetween, and the two first lead frame units are arranged in an opposite manner. Each the first lead frame unit has a... Agent: Silitek Electronic (guangzhou) Co., Ltd.

20120074455 - Led package structure: An LED package structure includes a heat conductive plate defining a concave groove therein, an LED die received in the concave groove, an eutectic layer sandwiched between the heat conductive plate and the substrate, a transparent encapsulant encapsulating the LED die on the heat conductive plate. The heat conductive plate... Agent: Foxsemicon Integrated Technology, Inc.

20120074456 - Light emitting device package: A light emitting device package is disclosed. The disclosed light emitting device package includes a body comprising a cavity, and a recess formed at a bottom surface of the body, first and second lead frames mounted in the body, and a light source electrically connected with the first and second... Agent:

20120074452 - Light emitting device package and method of manufacturing the same: A light emitting device package includes a base, a light emitting element, a mask, metal wires, an encapsulating layer and a cover layer. The base has a first surface bearing electrical structure thereon and an opposite second surface. The mask is arranged on the first surface to define a space... Agent: Advanced Optoelectronic Technology, Inc.

20120074454 - Optoelectric device and method for manufacturing the same: l

20120074453 - Patterned substrate and light-emitting diode having the same: A patterned substrate for epitaxially forming a light-emitting diode includes: a top surface; a plurality of spaced apart recesses, each of which is indented downwardly from the top surface and each of which is defined by a recess-defining wall, the recess-defining wall having a bottom wall face, and a surrounding... Agent: National Chung-hsing University

20120074457 - Semiconductor light emitting device with a contact formed on a textured surface: A device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure includes an n-contact region and a p-contact region. A cross section of the n-contact region comprises a plurality of first regions wherein portions of the light emitting... Agent: Koninklijke Philips Electronics N.v.

20120074458 - Quasi-vertical gated npn-pnp esd protection device: Fashioning a quasi-vertical gated NPN-PNP (QVGNP) electrostatic discharge (ESD) protection device is disclosed. The QVGNP ESD protection device has a well having one conductivity type formed adjacent to a deep well having another conductivity type. The device has a desired holding voltage and a substantially homogenous current flow, and is... Agent: Texas Instruments Incorporated

20120074459 - Semiconductor device: According to one embodiment, a semiconductor device includes a first major electrode, a first semiconductor layer, a first conductivity type base layer, a second conductivity type base layer, a first conductivity type second semiconductor layer, a gate insulating film, a gate electrode, and a second major electrode. The gate insulating... Agent: Kabushiki Kaisha Toshiba

20120074461 - Semiconductor device and method for manufacturing same: According to an embodiment, a semiconductor device includes a second semiconductor layer provided on a first semiconductor layer and including first pillars and second pillars. A first control electrode is provided in a trench of the second semiconductor layer and a second control electrode is provided on the second semiconductor... Agent: Kabushiki Kaisha Toshiba

20120074460 - Semiconductor device and method for manufacturing the same: According to an embodiment, a semiconductor device includes a first trench being provided in an N+ substrate. An N layer, an N− layer, a P layer, and an N+ layer are formed in a stacked manner to cover the first trench. The semiconductor device includes second and third trenches. The... Agent: Kabushiki Kaisha Toshiba

20120074462 - Long wavelength infrared sensor materials and method of synthesis thereof: A dilute nitrogen alloy of InNxSb1-x epilayers strained to an epitaxial substrate useful for Long Wavelength Infrared (LWIR) Focal Plane Arrays, and method of fabricating. Strained materials of composition InNxSb1-x exhibiting increased Auger lifetimes and improved absorption properties.... Agent: The University Of Houston System

20120074463 - Semiconductor wafer, photoelectric conversion device, method of producing semiconductor wafer, and method of producing photoelectric conversion device: Provided is a semiconductor wafer including: a base wafer containing silicon; an inhibitor that has been formed on the base wafer, has an aperture in which a surface of the base wafer is exposed, and inhibits crystal growth; and a light-absorptive structure that has been formed inside the aperture in... Agent: Sumitomo Chemical Company, Limited

20120074464 - Non-planar device having uniaxially strained semiconductor body and method of making same: A method and a device made according to the method. The method comprises providing a substrate including a first material, and providing a fin including a second material, the fin being disposed on the substrate and having a device active portion, the first material and the second material presenting a... Agent:

20120074465 - Silicon-germanium heterojunction bipolar transistor: A SiGe HBT formed on a silicon substrate is disclosed. An active area is isolated by field oxide regions; a collector region is formed in the active area and extends into the bottom of the field oxide regions; pseudo buried layers are formed at the bottom of the field oxide... Agent:

20120074466 - 3d memory array with vertical transistor: A memory array includes a base circuitry layer and a plurality of memory array layers stacked sequentially to form the memory array. Each memory array layer is electrically coupled to the base circuitry layer. Each memory array layer includes a plurality of memory units. Each memory unit includes a vertical... Agent: Seagate Technology LLC

20120074467 - Switch array: According to one embodiment, a switch array includes first and second switches provided in a switch unit. The first switch includes first and second memory cell transistors and a first pass transistor. A second switch includes third and fourth memory cell transistors and a second pass transistor. The first and... Agent: Kabushiki Kaisha Toshiba

20120074468 - Semiconductor structure: A semiconductor structure comprises a substrate, a gate structure, at least a source/drain region, a recess and an epitaxial layer. The substrate includes an up surface. A gate structure is located on the upper surface. The source/drain region is located within the substrate beside the gate structure. The recess is... Agent:

20120074469 - Asymmetric wedge jfet, related method and design structure: A junction gate field-effect transistor (JFET) for an integrated circuit (IC) chip is provided comprising a source region, a drain region, a lower gate, and a channel, with an insulating shallow trench isolation (STI) region extending from an inner edge of an upper surface of the source region to an... Agent: International Business Machines Corporation

20120074470 - Microwave semiconductor device using compound semiconductor and method for manufacturing the same: An undoped AlGaN layer 13 is formed on a buffer layer composed of a GaN series material formed on a semiconductor substrate, a drain electrode 15 and a source electrode 16 forming ohmic junction with the undoped AlGaN layer 13 are formed separately from each other on the undoped AlGaN... Agent: Kabushiki Kaisha Toshiba

20120074472 - Power semiconductor device having gate electrode coupling portions for etchant control: A general insulated gate power semiconductor active element with many gate electrodes arranged in parallel has a laminated structure including a barrier metal film and a thick aluminum electrode film formed over the gate electrodes via an interlayer insulating film. When the aluminum electrode film is embedded in between the... Agent: Renesas Electronics Corporation

20120074473 - Semiconductor device: A method for fabricating a semiconductor device comprises forming a partial-insulated substrate comprising an insulating region located below both a channel region of a cell transistor and one of a storage node contact region and a bit line contact region, and forming a cell transistor comprising a fin region on... Agent: Hynix Semiconductor Inc.

20120074471 - Transistor structure for improved static control during formation of the transistor: A method of forming a shadow mask vapor deposited transistor includes shadow mask vapor depositing a semiconductor segment. An electrically conductive drain contact is shadow mask vapor deposited on a first part of the semiconductor segment and a first insulator is shadow mask vapor deposited on the drain contact. An... Agent: Advantech Global, Ltd

20120074474 - Phototransistor and display device including the same: A phototransistor includes a source electrode and a gate electrode which have the same electric potential, a transparent electrode formed on a surface of an interlayer insulating film so as to be located above a channel region, and a refresh controller for reducing a charge accumulated in a portion of... Agent: Sharp Kabushiki Kaisha

20120074476 - Integrated circuit: In accordance with an embodiment, an integrated circuit includes a circuit in which first and second spin transistors are connected in series. The first spin transistor has a first node and a second node that are equal to each other in magnetization direction. The second spin transistor has a third... Agent: Kabushiki Kaisha Toshiba

20120074475 - Metal gate structure of a semiconductor device: The applications discloses a semiconductor device comprising a substrate having a first active region, a second active region, and an isolation region having a first width interposed between the first and second active regions; a P-metal gate electrode over the first active region and extending over at least ⅔ of... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120074477 - Semiconductor device having raised source and drain of differing heights: This semiconductor device has an MOS transistor equipped with a gate electrode formed on a semiconductor substrate, a source region next to one side of the gate electrode, and a drain region next to another side of the gate electrode, wherein an upper end of the source region and an... Agent: Elpida Memory, Inc.

20120074478 - Semiconductor device and manufacturing method thereof: As for a bypass capacitor, a first capacitor insulating film, together with a tunnel insulating film of a storage element, is formed of a first insulating film, a first electrode being a lower electrode, together with floating gate electrodes of the storage element, is formed of a doped·amorphous silicon film... Agent: Fujitsu Semiconductor Limited

20120074479 - Area-efficient electrically erasable programmable memory cell: Electrically erasable programmable “read-only” memory (EEPROM) cells in an integrated circuit, and formed by a single polysilicon level. The EEPROM cell consists of a coupling capacitor and a combined read transistor and tunneling capacitor. The capacitance of the coupling capacitor is much larger than that of the tunneling capacitor. In... Agent: Texas Instruments Incorporated

20120074480 - Method of forming lutetium and lanthanum dielectric structures: Methods of forming dielectric structures are shown. Methods of forming dielectric structures are shown that include lutetium oxide and lanthanum aluminum oxide crystals embedded within the lutetium oxide. Specific methods shown include monolayer deposition which yields process improvements such as chemistry control, step coverage, crystallinity/microstructure control.... Agent:

20120074481 - Securities, chip mounting product, and manufacturing method thereof: The invention provides an ID chip with reduced cost, increased impact resistance and attractive design, as well as products and the like mounting the ID chip and a manufacturing method thereof. In view of the foregoing, an integrated circuit having a semiconductor film with a thickness of 0.2 μm or... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120074482 - Eeprom cell: A method of forming a device is disclosed. The method includes providing a substrate prepared with a cell area separated by other active areas by isolation regions. First and second gates of first and second transistors in the cell area are formed. The first gate includes first and second sub-gates... Agent: Globalfoundries Singapore Pte. Ltd.

20120074483 - Eeprom cell: A method of forming a device is disclosed. The method includes providing a substrate prepared with a cell area and forming first and second gates of first and second transistors in the cell area. The first gate includes a second sub-gate surrounding a first sub-gate. The first and second sub-gates... Agent: Globalfoundries Singapore Pte. Ltd.

20120074485 - Nonvolatile memory device and manufacturing method thereof: A nonvolatile memory device comprises a gate insulating layer, a floating gate and a dielectric layer sequentially formed over a semiconductor substrate, a capping layer formed over the dielectric layer, and a control gate formed over the capping layer, wherein the control gate includes nitrogen or carbon as an additive.... Agent: Hynix Semiconductor Inc.

20120074484 - Semiconductor devices and methods of manufacturing semiconductor devices: A method of manufacturing a semiconductor device including forming a plurality of gate structures spaced apart from each other on a substrate; forming a first insulation layer covering the gate structures, the first insulation layer including a void between the gate structures; removing an upper portion of the first insulation... Agent:

20120074487 - Apparatus containing cobalt titanium oxide: Electronic apparatus and methods of forming the electronic apparatus include cobalt titanium oxide on a substrate for use in a variety of electronic systems. The cobalt titanium oxide may be structured as one or more monolayers. The cobalt titanium oxide may be formed by a monolayer by monolayer sequencing process... Agent:

20120074486 - Multi-gate bandgap engineered memory: Memory cells comprising: a semiconductor substrate having a source region and a drain region disposed below a surface of the substrate and separated by a channel region; a tunnel dielectric structure disposed above the channel region, the tunnel dielectric structure comprising at least one layer having a hole-tunneling barrier height;... Agent: Macronix International Co., Ltd.

20120074488 - Vertical transistor with hardening implatation: A method includes providing a semiconductor wafer having a plurality of pillar structures extending orthogonally from the semiconductor wafer. Each pillar structure forms a vertical pillar transistor having a top surface and a side surface orthogonal to the top surface. Then a hardening species is implanted into the vertical pillar... Agent: Seagate Technology LLC

20120074489 - Super-junction trench mosfet with resurf stepped oxides and trenched contacts: A super-junction trench MOSFET with Resurf Stepped Oxide and trenched contacts is disclosed. The inventive structure can apply additional freedom for better optimization and manufacturing capability by tuning thick oxide thickness to minimize influence of charge imbalance, trapped charges, etc. . . . Furthermore, the fabrication method can be implemented... Agent: Force Mos Technology Co., Ltd.

20120074490 - Semiconductor device and method of manufacturing the semiconductor device: To realize forming a trench MOSFET in which a depth of a P-body is changed on the same surface as a CMOS by employing steps with good controllability and without greatly increasing the number of manufacturing steps, provided is a trench MOSFET including an extended body region (10), which is... Agent:

20120074491 - Power semiconductor device: In general, according to one embodiment, a power semiconductor device includes a first pillar region, a second pillar region, and an epitaxial layer of a first conductivity type on a first semiconductor layer. The first pillar region is composed of a plurality of first pillar layers of a second conductivity... Agent: Kabushiki Kaisha Toshiba

20120074492 - Method of fabricating a semicoductor device having a lateral double diffused mosfet transistor with a lightly doped source and a cmos transistor: Methods and systems for monolithically fabricating a lateral double-diffused MOSFET (LDMOS) transistor having a source, drain, and a gate on a substrate, with a process flow that is compatible with a CMOS process flow are described.... Agent: Volterra Semiconductor Corporation

20120074493 - Field effect transistors having improved breakdown voltages and methods of forming the same: Transistors having improved breakdown voltages and methods of forming the same are provided herein. In one embodiment, a method of forming a transistor comprises the steps of: forming a drain and a source by doping a semiconductor with a first dopant type to form a first type of semiconductor, the... Agent: Analog Devices, Inc.

20120074494 - Strained thin body semiconductor-on-insulator substrate and device: A method of forming a strained, semiconductor-on-insulator substrate includes forming a second semiconductor layer on a first semiconductor substrate. The second semiconductor is lattice matched to the first semiconductor substrate such that the second semiconductor layer is subjected to a first directional stress. An active device semiconductor layer is formed... Agent: International Business Machines Corporation

20120074495 - Series finfet implementation schemes: A device includes a first semiconductor fin, and a second semiconductor fin parallel to the first semiconductor fin. A straight gate electrode is formed over the first and the second semiconductor fins, and forms a first fin field-effect transistor (FinFET) and a second FinFET with the first and the second... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120074496 - Diode having a pocket implant blocked and circuits and methods employing same: Diodes, including gated diodes and shallow trench isolation (STI) diodes, manufacturing methods, and related circuits are provided without at least one halo or pocket implant thereby reducing capacitance of the diode. In this manner, the diode may be used in circuits and other devices having performance sensitive to load capacitance... Agent: Qualcomm Incorporated

20120074497 - Esd protection structure: A device used as an ESD protection structure, which is a modified N-type LDMOS device is disclosed. A conventional LDMOS includes only one N-type heavily doped region as a drain in an N-type lightly doped region (11), while the device of the invention includes a P-type heavily doped region (22)... Agent:

20120074499 - Integrated circuits and methods of design and manufacture thereof: Integrated circuits and methods of manufacture and design thereof are disclosed. For example, a method of manufacturing includes using a first mask to pattern a gate material forming a plurality of first and second features. The first features form gate electrodes of the semiconductor devices, whereas the second features are... Agent: Infineon Technologies Ag

20120074498 - Method and apparatus for improving gate contact: A method of fabricating a semiconductor device includes providing a substrate having a first surface, forming an isolation structure disposed partly in the substrate and having an second surface higher than the first surface by a step height, removing a portion of the isolation structure to form a recess therein... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120074500 - Method for forming transistor with high breakdown voltage: Transistors are formed using pitch multiplication. Each transistor includes a source region and a drain region connected by strips of active area material separated by shallow trench isolation (STI) structures, which are formed by dielectric material filling trenches formed by pitch multiplication. During pitch multiplication, rows of spaced-apart mandrels are... Agent: Micron Technology, Inc.

20120074503 - Planar silicide semiconductor structure: A planar silicide structure and method of fabrication is disclosed. A FET having a silicided raised source-drain structure is formed where the height of the source-drain structures are the same as the height of the gates, simplifying the process of forming contacts on the FET. One embodiment utilizes a replacement... Agent: International Business Machines Corporation

20120074504 - Semiconductor device and method of fabricating the same: A semiconductor device fabrication method includes forming a first gate electrode via a first gate insulating film on a P-type semiconductor region formed in a surface portion of a semiconductor substrate; forming a second gate electrode via a second gate insulating film on an N-type semiconductor region formed in the... Agent: Kabushiki Kaisha Toshiba

20120074501 - Use of contacts to create differential stresses on devices: Disclosed herein are various methods and structures using contacts to create differential stresses on devices in an integrated circuit (IC) chip. An IC chip is disclosed having a p-type field effect transistor (PFET) and an n-type field effect transistor (NFET), a PFET contact to a source/drain region of the PFET... Agent: International Business Machines Corporation

20120074502 - Use of contacts to create differential stresses on devices: Disclosed herein are various methods and structures using contacts to create differential stresses on devices in an integrated circuit (IC) chip. An IC chip is disclosed having a p-type field effect transistor (PFET) and an n-type field effect transistor (NFET). One embodiment of this invention includes creating this differential stress... Agent: International Business Machines Corporation

20120074505 - 3d integrated circuit in planar process: Techniques related to 3D integrated circuits formed on a single wafer are disclosed. According to one embodiment, an integrated circuit comprises a first device forming a first projection area on a wafer and a second device forming a second projection area on the wafer. The first projection area overlaps with... Agent: Vimicro Corporation

20120074507 - Integration of an amorphous silicon resistive switching device: An integrated circuit device. The integrated circuit device includes a semiconductor substrate having a surface region. A gate dielectric layer overlies the surface region of the substrate. The device includes a MOS device having a p+ active region. The p+ active region forms a first electrode for a resistive switching... Agent: Crossbar, Inc.

20120074506 - Semiconductor package for higher power transistors: A semiconductor package for mounting multiple field effect transistors (FETs) is disclosed. The package includes a drain conductor between each FET's drain connection point and a drain terminal connector on the semiconductor package; a source conductor between each FET's source connection point and a source terminal connector of the source... Agent: Advanced Energy Industries, Inc.

20120074508 - Power semiconductor device: A power semiconductor device less prone to cause a reaction between a metal material for interconnection and an electrode or the like connected to a semiconductor region during the high-temperature operation thereof and less prone to be strained during the high-temperature operation thereof. The power semiconductor device can be an... Agent: Mitsubishi Electric Corporation

20120074509 - Wafer bond cmut array with conductive vias: A wafer bonded CMUT array comprising a plurality of CMUT elements distributed across a substrates, each element comprising a cavity and a signal electrode formed in the substrate, and a conductive membrane closing the cavity and forming a ground electrode, wherein the membranes of the individual elements form an unbroken... Agent: Ntnu Technology Transfer As

20120074510 - Magnetic sensor and magnetic head: A magnetic sensor 1 comprises a main channel layer 7a having first, second, and third regions 71, 72, 73 and extending in a first direction; a first ferromagnetic layer 12A mounted on the first region 71; a second ferromagnetic layer 12B mounted on the second region 72; a projection channel... Agent: Tdk Corporation

20120074511 - Magnetic memory and method of manufacturing the same: A magnetic memory according to an embodiment includes: at least one memory cell comprising a magnetoresistive element as a memory element, and first and second electrodes that energize the magnetoresistive element. The magnetoresistive element includes: a first magnetic layer having a variable magnetization direction perpendicular to a film plane; a... Agent: Kabushiki Kaisha Toshiba

20120074512 - Communication device: A communication device according to an embodiment includes an antenna transmitting/receiving a high frequency signal, a semiconductor chip having four corners and four sides processing the high frequency signal, and a substrate on which a first wiring connected to ground, a second wiring supplying power to the semiconductor chip, a... Agent: Kabushiki Kaisha Toshiba

20120074513 - Photoelectric conversion element, solid-sate imaging element, imaging apparatus, and method for manufacturing photoelectric conversion element: A photoelectric conversion element includes an insulating film, a first electrode, a light receiving layer, and a second electrode. The first electrode is formed on the insulating film and is made of titanium oxynitride. The light receiving layer is formed on the first electrode and includes an organic material. A... Agent: Fujifilm Corporation

20120074514 - Etch-resistant coating on sensor wafers for in-situ measurement: A sensor wafer may be configured for in-situ measurements of parameters during an etch process. The sensor wafer may include a substrate, a cover, and one or more components positioned between the substrate and the cover. An etch-resistant coating is formed on one or more surfaces of the cover and/or... Agent: Kla-tencor Corporation

20120074515 - Noise decoupling structure with through-substrate vias: A device includes a substrate having a front surface and a back surface; an integrated circuit device at the front surface of the substrate; and a metal plate on the back surface of the substrate, wherein the metal plate overlaps substantially an entirety of the integrated circuit device. A guard... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120074516 - Semiconductor device: An object is to provide a semiconductor device having a plate electrode adapted to a plurality of chips, capable of being produced at low cost, and having high heat cycle property. A semiconductor device according to the present invention includes a plurality of semiconductor chips formed on a substrate, and... Agent: Mitsubishi Electric Corporation

20120074518 - Semiconductor device and method of fabricating the same: The invention relates to a semiconductor device, wherein a storage node contact hole is made large to solve any problem caused during etching a storage node contact hole with a small CD, a landing plug is formed to lower plug resistance. A semiconductor device according to the invention comprises: first... Agent: Hynix Semiconductor Inc.

20120074517 - Semiconductor structure and method for making same: One or more embodiments relate to a method for forming a semiconductor structure, including: forming a semiconductor layer; and forming a dielectric layer over a back side of said semiconductor layer. In one or more embodiments, the dielectric layer may be a silicone rubber layer.... Agent:

20120074519 - Crack stop structure enhancement of the integrated circuit seal ring: An improved crack stop structure (and method of forming) is provided within a die seal ring of an integrated circuit die to increase crack resistance during the dicing of a semiconductor wafer. The crack stop structure includes a stack layer (of alternating insulating and conductive layers) and an anchor system... Agent: Chartered Semiconductor Manufacturing, Ltd.

20120074520 - Electrical fuse structure and method of fabricating same: A high programming efficiency electrical fuse is provided utilizing a dual damascene structure located atop a metal layer. The dual damascene structure includes a patterned dielectric material having a line opening located above and connected to an underlying via opening. The via opening is located atop and is connected to... Agent: International Business Machines Corporation

20120074521 - Method of manufacturing capacitor, and capacitor, circuit substrate and semiconductor apparatus: A method of manufacturing a capacitor includes forming a first ceramic film on a first base made of a metal, forming a second ceramic film on a second base made of a metal, forming a first copper electrode pattern and a first copper via-plug on a surface of one of... Agent: Fujitsu Limited

20120074522 - Vertical zener diode structure and manufacturing method of the same: The present invention discloses a vertical zener diode structure, in which a deep N-sinker region and a P-implantation region of the zener diode are formed in an N-well within an epitaxial layer; the P-implantation region is closer to a silicon surface than the deep N-sinker region in a vertical direction.... Agent:

20120074523 - Controlling microelectronic substrate bowing: The present disclosure relates to the field of epitaxial structures for microelectronic device formation, particularly to heavily doped, substrates having a compensation component embedded along the dopant to prevent bowing of the substrate during deposition of an epitaxial layer.... Agent:

20120074524 - Lateral growth method for defect reduction of semipolar nitride films: A lateral growth method for defect reduction of semipolar nitride films. The process steps include selecting a semipolar nitride plane and composition, selecting a suitable substrate for growth of the semipolar nitride plane and composition, and applying a selective growth process in which the semipolar nitride nucleates on some areas... Agent: The Regents Of The University Of California

20120074525 - Miscut semipolar optoelectronic device: A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the... Agent: The Regents Of The University Of California

20120074526 - Detachable substrate and processes for fabricating and detaching such a substrate: The invention relates to a detachable substrate for the electronics, optics or optoelectronics industry, that includes a detachable layer resting on a buried weakened region. This substrate is remarkable in that this buried weakened region consists of a semiconductor material that is denser in the liquid state than in the... Agent:

20120074527 - Integrated circuit comprising a device with a vertical mobile element integrated in a support substrate and method for producing the device with a mobile element: The integrated circuit comprises a support substrate having opposite first and second main surfaces. A cavity passes through the support substrate and connects the first and second main surfaces. The integrated circuit comprises a device with a mobile element, the mobile element and a pair of associated electrodes of which... Agent: Stmicroelectronics Sa

20120074528 - Technique to modify the microstructure of semiconducting materials: A method of treating a sheet of semiconducting material comprises forming a sinterable first layer over each major surface of a sheet of semiconducting material, forming a second layer over each of the first layers to form a particle-coated semiconductor sheet, placing the particle-coated sheet between end members, heating the... Agent:

20120074530 - Interposer including air gap structure, methods of forming the same, semiconductor device including the interposer, and multi-chip package including the interposer: Example embodiments of the present invention relate to an interposer of a semiconductor device having an air gap structure, a semiconductor device using the interposer, a multi-chip package using the interposer and methods of forming the interposer. The interposer includes a semiconductor substrate including a void, a metal interconnect, provided... Agent:

20120074529 - Semiconductor package with through electrodes and method for manufacturing the same: A semiconductor package may include a substrate with a first surface over which bond fingers are formed. At least two semiconductor chips may be stacked on the first surface of the substrate and each chip may have via holes. The semiconductor chips may be stacked such that the respective via... Agent: Hynix Semiconductor Inc.

20120074531 - Epitaxy substrate: An epitaxy substrate for growing a plurality of semiconductor epitaxial layers thereon, includes a plurality of growth areas and a plurality of protected areas. The growth areas are provided for growing the semiconductor epitaxial layers thereon. The growth areas and the protected areas are alternating. A thickness of the growth... Agent: Advanced Optoelectronic Technology, Inc.

20120074532 - Semiconductor package with integrated metal pillars and manufacturing methods thereof: A semiconductor package includes a substrate and a semiconductor device. The semiconductor device includes a body having a center, a layer disposed adjacent to the body, and a plurality of conductive pillars configured to electrically connect the semiconductor device to the substrate. The layer defines a plurality of openings. Each... Agent: Advanced Semiconductor Engineering, Inc.

20120074535 - Low dielectric constant material: The present disclosure provides a dielectric material including a low dielectric constant material and an additive. The additive includes a compound having a Si—X—Si bridge, where X is a number of carbon atoms between 1 and 8. The additive may include terminal Si—CH3 groups. The dielectric material including the additive... Agent: Taiwan Semiconductor Manufacturing Company, Ltd., ("tsmc")

20120074534 - Semiconductor device and method of forming protective structure around semiconductor die for localized planarization of insulating layer: A semiconductor wafer contains a plurality of semiconductor die separated by a saw street. A contact pad is formed over an active surface of the semiconductor die. A protective pattern is formed over the active surface of the semiconductor die between the contact pad and saw street of the semiconductor... Agent: Stats Chippac, Ltd.

20120074533 - Structures and techniques for atomic layer deposition: In one exemplary embodiment, a method includes: forming at least one first monolayer of first material on a surface of a substrate by performing a first plurality of cycles of atomic layer deposition; thereafter, annealing the formed at least one first monolayer of first material under a first inert atmosphere... Agent: International Business Machines Corporation

20120074536 - Methods of manufacturing semiconductor devices and structures thereof: Methods of manufacturing semiconductor devices are disclosed. A preferred embodiment comprises a method of manufacturing a semiconductor device, the method including providing a workpiece, disposing an etch stop layer over the workpiece, and disposing a material layer over the etch stop layer. The material layer includes a transition layer. The... Agent: Infineon Technologies Ag

20120074537 - Dielectric stack: A method of forming a device is disclosed. The method includes providing a substrate and forming a device layer on the substrate having a formed thickness TFD. A capping layer is formed on the substrate having a formed thickness TFC. Forming the capping layer consumes a desired amount of the... Agent: Globalfoundries Singapore Pte. Ltd.

20120074539 - Device and methods for electrostatic discharge protection: An ESD device includes a first and second well regions disposed in a semiconductor substrate. The first well region comprises a plurality of N wells spaced at a predetermined length. A heavily doped P+ region and a heavily doped N+ region are disposed in each of the N wells. The... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20120074543 - Package apparatus of power semiconductor device: A package apparatus is for packaging a power semiconductor device that includes a substrate formed, a mold part molded on the substrate, and electrode terminals extended from the mold part to a side opposite from the substrate by a predetermined length; includes: a holding unit that has insertion slots and... Agent: Mitsubishi Electric Corporation

20120074538 - Package structure with esd and emi preventing functions: A package structure with ESD (electrostatic discharge) and EMI (electromagnetic interference) preventing functions includes: a carrier having first and second ground structures electrically insulated from one another; a semiconductor component disposed on one surface of the carrier and electrically connected to the first ground structure; and a lid member disposed... Agent: Siliconware Precision Industries Co., Ltd.

20120074540 - Semiconductor chip package: A structure of a semiconductor chip package is provided. The semiconductor chip package includes: a substrate; a semiconductor chip mounted on a first surface of the substrate; a plurality of electrode pads on a second surface, different from the first surface, of the substrate; and an electrostatic discharge protection pad... Agent: Samsung Electronics Co., Ltd.

20120074542 - Semiconductor device: A semiconductor device, in which a control circuit board is mountable outside a sheath case and a power semiconductor element is placeable inside the sheath case, includes a metal step support, a shield plate and a metal ring. The support includes a base portion implanted in the sheath case, a... Agent: Fuji Electronic Co., Ltd.

20120074541 - Semiconductor device and a method of manufacturing the same: A technique is provided which allows a chip mounted by wire bonding and a chip mounted by bump electrodes to share a manufacturing process. Both in a case where a chip is electrically coupled to an external circuit by bump electrodes and a case where the chip is electrically coupled... Agent: Renesas Electronics Corporation

20120074544 - Semiconductor device and manufacturing method therefor: A semiconductor device includes, a lead frame having a die pad and a plurality of leads each disposed around the die pad, a semiconductor element rested on the die pad of the lead frame, and bonding wires for electrically interconnecting the lead of the lead frame and the semiconductor element.... Agent: Dai Nippon Printing Co., Ltd.

20120074545 - Thin flip chip package structure: A thin flip chip package structure comprises a substrate, a chip and a heat dissipation paste, wherein the substrate comprises an insulating layer and a trace layer. The insulating layer comprises a first insulating portion and a second insulating portion, the first insulating portion comprises a first upward surface, a... Agent:

20120074552 - Circuit device and method for manufacturing the same: In a hybrid integrated circuit device, a circuit board on which an island portion of a lead is fixedly attached and a control board on which a control element and the like are mounted are disposed in an overlapping manner. The circuit board and the control board are integrally encapsulated... Agent: On Semiconductor Trading, Ltd.

20120074548 - Integrated circuit packaging system with interlock and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: forming a package paddle; forming a lead adjacent the package paddle, the lead having a lead overhang protruding from a lead non-horizontal side and a lead ridge protruding from the lead non-horizontal side; mounting an integrated circuit over the... Agent:

20120074547 - Integrated circuit packaging system with lead encapsulation and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: forming a package paddle; forming a lead adjacent the package paddle, the lead having a hole in a lead body top side and a lead ridge protruding from a lead non-horizontal side; mounting an integrated circuit over the package... Agent:

20120074550 - Lead frame, semiconductor device, and method of manufacturing semiconductor device: A lead frame includes a die stage; an inner lead provided near the die stage; and a bus bar provided between the die stage and the inner lead and supported by a hanging lead, wherein the hanging lead is inclined with respect to the inner lead, and a wire connection... Agent: Fujitsu Semiconductor Limited

20120074546 - Multi-chip semiconductor packages and assembly thereof: Semiconductor packages and method of fabricating them are described. In one embodiment, the semiconductor package includes a substrate having a first and a second die attach pad. A first die is disposed over the first die attach pad. A second die is disposed over the second die attach pad. A... Agent:

20120074551 - Semiconductor device: An improved reliability of a junction region between a bonding wire and an electrode pad in an operation at higher temperature is presented. A semiconductor device includes a semiconductor chip provided on a lead frame, which are encapsulated with an encapsulating resin. Lead frames are provided in both sides of... Agent: Renesas Electronics Corporation

20120074549 - Semiconductor device with exposed pad: A semiconductor device has a die attached to a die pad and electrically connected to lead fingers. The die, a top surface of the die pad, and a first portion of the lead fingers are covered with a mold compound. A second portion of the lead fingers project from the... Agent: Freescale Semiconductor, Inc.

20120074553 - Method and system for improving reliability of a semiconductor device: A method and a system for improving reliability of a semiconductor device are provided. In one embodiment, a semiconductor device is provided comprising a semiconductor chip, a metallization layer comprising a metallic material disposed over a surface of the semiconductor chip, and an alloy layer comprising the metallic material disposed... Agent:

20120074554 - Bond ring for a first and second substrate: The present disclosure provides a device having a plurality of bonded substrates. The substrates are bonded by a first bond ring and a second bond ring. In an embodiment, the first bond ring is a eutectic bond and the second bond ring is at least one of an organic material... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120074555 - Semiconductor package including cap: A semiconductor package comprises: a substrate comprising a semiconductor device; a cap comprising a seal ring disposed over a surface of the cap; and a gap between the substrate and the surface of the cap. The seal ring comprises a tread comprising at least two columns.... Agent: Avago Technologies WirelessIP(singapore) Pte. Ltd.

20120074556 - Semiconductor power module and method of manufacturing the same: A semiconductor power module according to the present invention includes a base member, a semiconductor power device having a surface and a rear surface with the rear surface bonded to the base member, a metal block, having a surface and a rear surface with the rear surface bonded to the... Agent: Rohm Co., Ltd.

20120074558 - Circuit board packaged with die through surface mount technology: A package of a circuit board and a die are packed through surface mount technology (SMT). The shortest circuit is formed with at a low cost. Thus, the package can work in high speed and high frequency applications.... Agent: Mao Bang Electronic Co., Ltd.

20120074557 - Integrated circuit package lid configured for package coplanarity: An integrated circuit package apparatus comprises a packaging substrate, an integrated circuit coupled to an upper side of the packaging substrate, an array of contacts coupled to an underside of the packaging substrate for electrically coupling the integrated circuit to a circuit board, and a lid coupled to the upper... Agent: Cisco Technology, Inc.

20120074559 - Integrated circuit package using through substrate vias to ground lid: An integrated circuit package including a package substrate, a metal lid mounted to the package substrate, and a stack of two or more integrated circuit chips electrically connected to each other by through substrate vias. The stack of two or more integrated circuit chips is disposed within the metal lid... Agent: International Business Machines Corporation

20120074560 - Integrated circuit packaging system with warpage control and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing a carrier; mounting an integrated circuit device having component connectors directly on the carrier; placing a restraint structure over the integrated circuit device for controlling warpage of the integrated circuit device during bonding of the component connectors to... Agent:

20120074561 - Backmetal replacement for use in the packaging of integrated circuits: One aspect of the invention pertains to an arrangement for forming exposed die packages. The arrangement includes a semiconductor wafer having multiple integrated circuit dice whose back surfaces cooperate to form the back surface of the wafer. A thermally conductive adhesive layer is deposited on the back surface of the... Agent: National Semiconductor Corporation

20120074563 - Semiconductor apparatus and the method of manufacturing the same: A semiconductor apparatus includes a semiconductor chip, a post electrode positioned on the front surface electrode, and a metal particle layer having metal particles bonded actively to each other. The front surface electrode and the post electrode are bonded with each other through the metal particle layer. A method of... Agent: Fuji Electric Co., Ltd.

20120074564 - Semiconductor device and manufacturing method of the same: A semiconductor device comprises a semiconductor substrate having a connection pad, an external connection electrode provided on the semiconductor substrate to be connected to the connection pad, and a sealing film provided to cover the external connection electrode, wherein an opening is provided in the sealing film to expose a... Agent: Casio Computer Co., Ltd.

20120074565 - Semiconductor device provided with rear protective film on other side of semiconductor substrate and manufacturing method of the same: An opening is formed in a part of a rear protective film corresponding to the center of a dicing street by laser processing which applies a laser beam. The rear protective film is formed on the lower surface of a semiconductor wafer, and made of a resin. By using a... Agent: Casio Computer Co., Ltd.

20120074562 - Three-dimensional integrated circuit structure with low-k materials: A device includes an interposer free from active devices therein. The interposer includes a substrate; a through-substrate via (TSV) penetrating through the substrate; and a low-k dielectric layer over the substrate.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120074566 - Package for semiconductor device including guide rings and manufacturing method of the same: An example embodiment relates to a semiconductor package. The semiconductor package includes a first substrate including a first pad, a second substrate upwardly spaced apart from the first substrate and including a second pad opposite to the first pad. At least one electrode is coupled between the first pad and... Agent: Samsung Electronics Co., Ltd.

20120074567 - Semiconductor device and method of forming vertical interconnect structure between non-linear portions of conductive layers: A semiconductor device is made by forming a first conductive layer over a first temporary carrier having rounded indentations. The first conductive layer has a non-linear portion due to the rounded indentations. A bump is formed over the non-linear portion of the first conductive layer. A semiconductor die is mounted... Agent: Stats Chippac, Ltd.

20120074568 - Method and system for minimizing carrier stress of a semiconductor device: A method and a system for minimizing carrier stress of a semiconductor device are provided. In one embodiment, a semiconductor device is provided comprising a carrier comprising a mesh coated with a metallic material, and a semiconductor chip disposed over the carrier.... Agent:

20120074569 - Semiconductor device: A semiconductor device includes a substrate having external connection terminals, and a semiconductor chip mounted over a semiconductor-chip mounting portion of the substrate. The external connection terminals are formed by sequentially forming an electroless nickel plating layer, an electroless gold plating layer, and an electrolytic gold plating layer on a... Agent: Panasonic Corporation

20120074575 - Copper line having self-assembled monolayer for ulsi semiconductor devices, and a method of forming same: A copper line having self assembled monolayer for use in ULSI semiconductor devices and methods of making the same are presented. The copper line includes an interlayer dielectric, a self-assembled monolayer, catalytic particles on the monolayer, and a copper layer on the monolayer with the catalytic particles. The method includes... Agent: Hynix Semiconductor Inc.

20120074570 - Method for forming a through via in a semiconductor element and semiconductor element comprising the same: A method for forming a through via in a semiconductor element includes providing a semiconductor element having electronic circuitry integrated on the main side thereof. The semiconductor element further includes an etch stop layer and a conductive region, wherein the conductive region is arranged between the etch stop layer and... Agent: Infineon Technologies Ag

20120074571 - Methods and architectures for bottomless interconnect vias: An apparatus includes an interconnect in a recess. The interconnect includes a liner structure and the liner structure in the recess. The liner structure is breached at the recess bottom feature and a bottom interconnect makes a single-interface contact with a subsequent interconnect through the breach.... Agent:

20120074572 - Semiconductor structure and method for making same: One or more embodiments relate to a method for making a semiconductor structure, comprising: providing a workpiece; forming a barrier layer over the workpiece; forming a separation layer over the barrier layer; forming a conductive layer over the separation layer; and wet etching the conductive layer.... Agent:

20120074573 - Semiconductor structure and method for making same: One or more embodiments relate to a method of forming a semiconductor device, comprising: forming a structure, the structure including at least a first element and a second element; and forming a passivation layer over the structure, the passivation layer including at least the first element and the second element,... Agent:

20120074574 - Semiconductor structure and method for making same: One or more embodiments relate to a method of forming a semiconductor structure, comprising: providing a workpiece; forming a barrier layer over the workpiece; forming a seed layer over the barrier layer; forming an inhibitor layer over the seed layer; removing a portion of said inhibitor layer to expose a... Agent:

20120074576 - Interconnect for an optoelectronic device: Interconnects for optoelectronic devices are described. An interconnect may include a stress relief feature. An interconnect may include an L-shaped feature.... Agent:

20120074577 - Semiconductor device, method for manufacturing of semiconductor device, and switching circuit: It is an objective to provide a semiconductor device with low leak current. The semiconductor device includes a plurality of ground side electrodes and a plurality of signal side electrodes arranged on a semiconductor substrate in an alternating manner; a plurality of control electrodes arranged respectively between each pair of... Agent: Advantest Corporation

20120074578 - Semiconductor element, semiconductor element mounted board, and method of manufacturing semiconductor element: A semiconductor element includes connection terminals. The connection terminals are each shaped in such a manner that the transverse cross-sectional area in a portion near the leading end thereof decreases toward the leading end. Specifically, the shape of each of the connection terminals is columnar except for the portion near... Agent: Shinko Electric Industries Co., Ltd.

20120074582 - Device with through-silicon via (tsv) and method of forming the same: A device with through-silicon via (TSV) and a method of forming the same includes the formation of an opening in a silicon substrate, the formation of a first insulation layer on the sidewalls and bottom of the opening, the formation of a second insulation layer on the sidewalls and bottom... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120074581 - Die-stacking using through-silicon vias on bumpless build-up layer substrates including embedded-dice, and processes of forming same: An apparatus includes a coreless substrate with a through-silicon via (TSV) embedded die that is integral to the coreless substrate. The apparatus includes a subsequent die that is coupled to the TSV die and that is disposed above the coreless substrate.... Agent:

20120074586 - Methods of fabricating package stack structure and method of mounting package stack structure on system board: A package stack structure includes a lower semiconductor chip on a lower package substrate having a plurality of lower via plug lands, a lower package having a lower molding compound surrounding a portion of a top surface of the lower package substrate and side surfaces of the lower semiconductor chip,... Agent: Samsung Electronics Co., Ltd

20120074580 - Methods of forming fully embedded bumpless build-up layer packages and structures formed thereby: Methods of forming a microelectronic packaging structure and associated structures formed thereby are described. Those methods may include a die embedded in a coreless substrate, wherein a mold compound surrounds the die, and wherein the die comprises TSV connections on a first side and C4 pads on a second side... Agent:

20120074584 - Multi-layer tsv insulation and methods of fabricating the same: Provided is a semiconductor device. The semiconductor device may include a substrate and a stacked insulation layer on a sidewall of an opening which penetrates the substrate. The stacked insulation layer can include at least one first insulation layer and at least one second insulation layer whose dielectric constant is... Agent: Samsung Electronics Co., Ltd.

20120074579 - Semiconductor chip with reinforcing through-silicon-vias: A method of manufacturing includes connecting a first end of a first through-silicon-via to a first die seal proximate a first side of a first semiconductor chip. A second end of the first thu-silicon-via is connected to a second die seal proximate a second side of the first semiconductor chip... Agent:

20120074587 - Semiconductor device and method of bonding different size semiconductor die at the wafer level: A semiconductor wafer has first and second opposing surfaces. A plurality of conductive vias is formed partially through the first surface of the semiconductor wafer. The semiconductor wafer is singulated into a plurality of first semiconductor die. The first semiconductor die are mounted to a carrier. A second semiconductor die... Agent: Stats Chippac, Ltd.

20120074585 - Semiconductor device and method of forming tsv interposer with semiconductor die and build-up interconnect structure on opposing surfaces of the interposer: A semiconductor device has a substrate with first and second opposing surfaces. A plurality of conductive vias is formed partially through the first surface of the substrate. A first conductive layer is formed over the first surface of the substrate electrically connected to the conductive vias. A first semiconductor die... Agent: Stats Chippac, Ltd.

20120074583 - Semiconductor structure having a through substrate via (tsv) and method for forming: A structure having a substrate includes an opening in the substrate having depth from a top surface of the substrate to a bottom surface of the substrate. A conductive material fills the opening. The opening has a length direction and a width direction and a first and second feature. The... Agent:

20120074593 - Chip stacked structure and method of fabricating the same: A chip stacked structure and method of fabricating the same are provided. The chip stacked structure includes a first chip and a second chip stacked on the first chip. The first chip has a plurality of metal pads disposed on an upper surface thereof and grooves disposed on a side... Agent: Universal Scientific Industrial (shanghai) Co., Ltd.

20120074589 - Corner structure for ic die: One or more integrated circuit chips are flip-chip bonded to a first surface of a substrate. A contact array is fabricated on a second surface of the substrate. Corner structures attached to the integrated circuit chip cover at least two corners of the IC chip.... Agent: Xilinx, Inc.

20120074588 - Integrated circuit packaging system with warpage control and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing an integrated circuit device having chip interconnects; applying an attachment layer directly on the integrated circuit device; attaching a device stiffener to the integrated circuit device with the attachment layer; attaching a chip carrier to the chip interconnects... Agent:

20120074590 - Multiple bonding in wafer level packaging: The present disclosure provides a method for fabricating a MEMS device including multiple bonding of substrates. In an embodiment, a method includes providing a micro-electro-mechanical systems (MEMS) substrate including a first bonding layer, providing a semiconductor substrate including a second bonding layer, and providing a cap including a third bonding... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120074594 - Semiconductor device and manufacturing method thereof: A semiconductor device comprising a support plate, a semiconductor element mounted on the support plate and including a circuit element surface having a plurality of first electrodes, a first insulation layer covering the circuit element surface of the semiconductor element, and including a plurality of first apertures exposing the plurality... Agent: J-devices Corporation

20120074595 - Semiconductor package: A semiconductor package includes a first substrate on which a first semiconductor chip is mounted, a second substrate spaced apart from the first substrate and on which a second semiconductor chip is mounted, first pads disposed on the first substrate, second pads disposed on the second substrate to be opposite... Agent: Samsung Electronics Co., Ltd.

20120074591 - Thin wafer support assembly: A semiconductor wafer assembly formed by bonding a support wafer to a thin wafer using a double-sided bonding release tape. The support wafer provides support for the thin target wafer such that existing handling tools can accommodate transporting and processing the assembly without compromising the profile of the thin target... Agent: Varian Semiconductor Equipment Associates, Inc.

20120074592 - Wafer-level packaging method using composite material as a base: An electronic package that includes a composite material base. In one embodiment the electronic package is an expanded wafer-level package. The composite material base is composed of woven strands and polymer material. In one embodiment the composite material base is composed of woven fiberglass strands and an epoxy material. In... Agent: Stmicroelectronics Asia Pacific Pte, Ltd.

20120074596 - Set of resin compositions for preparing system-in-package type semiconductor device: Set of compositions for preparing system-in-package type semiconductor device. The composition set consists of underfill composition for preparing underfill part and encapsulation resin composition for preparing resin encapsulation part. 1) A cured product of the underfill composition has a glass transition temperature, Tg, ≧100° C. and is the same with... Agent:

20120074597 - Flexible underfill compositions for enhanced reliability: Underfill materials for fabricating electronic devices are described. One embodiment includes an underfill composition including an epoxy mixture, an amine hardener component, and a filler. The epoxy mixture may include a first epoxy comprising a bisphenol epoxy, a second epoxy comprising a multifunctional epoxy, and a third epoxy comprising an... Agent:

20120074598 - Chip, method for producing a chip and device for laser ablation: In various embodiments, a chip may include a substrate; a coating, the coating covering the substrate at least partially and the coating being designed for being stripped at least partially by means of laser ablation; wherein between the substrate and the coating, a laser detector layer is arranged at least... Agent: Infineon Technologies Ag

20120074599 - Method of forming wafer level mold using glass fiber and wafer structure formed by the same: According to example embodiments, a wafer level mold may be formed by a method including attaching a substrate to a lower side of a wafer on which a semiconductor chip is arranged, applying molding liquid to an upper and at least one lateral side of the semiconductor chip and an... Agent: Samsung Electronics Co., Ltd.

20120068136 - Phase change memory device, storage system having the same and fabricating method thereof: Provided are a phase change memory device and a fabricating method thereof. The phase change memory device includes a substrate, an interlayer dielectric layer formed on the substrate, first and second contact holes formed in the interlayer dielectric layer, and a memory cell formed in the first and second contact... Agent: Samsung Electronics Co., Ltd.

20120068139 - Magnetoresistive element and magnetic memory: A magnetoresistive element according to an embodiment includes: a first ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a second ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a nonmagnetic layer placed between the... Agent: Kabushiki Kaisha Toshiba

20120068138 - Optical storage medium comprising two nonlinear layers: The optical storage medium comprises a substrate layer, a data layer arranged on the substrate layer, a first nonlinear layer with a first super-resolution structure arranged above the data layer, and a second nonlinear layer with a second super-resolution structure arranged above the first nonlinear layer, the first nonlinear layer... Agent: Thomas Licensing

20120068141 - Silver-selenide/chalcogenide glass stack for resistance variable memory: The invention is related to methods and apparatus for providing a resistance variable memory element with improved data retention and switching characteristics. According to an embodiment of the invention a resistance variable memory element is provided having at least one silver-selenide layer in between glass layers, wherein at least one... Agent:

20120068140 - Switchable electronic device and method of switching said device: A switchable electronic device comprises a hole blocking layer and a layer comprising a conductive material between first and second electrodes, wherein the conductivity of the device may be irreversibly switched upon application of a current having a current density of less than or equal to 100 A cm−2 to... Agent: Cambridge Display Technology Limited

20120068137 - Switching device and memory device including the same: A switching device includes a first electrode, a bipolar tunneling layer, and a second electrode. The bipolar tunneling layer is formed on the first electrode and includes a plurality of dielectric layers having different dielectric constants. The second electrode is formed on the bipolar tunneling layer.... Agent:

20120068142 - Resistance random access memory element and method for making the same: A resistance random access memory element includes a first electrode, an insulating layer, a diffusing metal layer, and a second electrode superimposed in sequence. The insulating layer includes a plurality of pointed electrodes. A method for making a resistance random access memory element includes growing and forming an insulating layer... Agent:

20120068143 - Memory arrays and methods of forming memory cells: Some embodiments include methods of forming memory cells utilizing various arrangements of conductive lines, electrodes and programmable material; with the programmable material containing high k dielectric material directly against multivalent metal oxide. Some embodiments include arrays of memory cells, with the memory cells including programmable material containing high k dielectric... Agent:

20120068146 - Memory element and memory device: There are provided a memory element and a memory device with a smaller range of element-to-element variation of electrical characteristics. The memory element includes a first electrode, a memory layer, and a second layer in this order. The memory layer includes a resistance change layer including a plurality of layers... Agent: Sony Corporation

20120068145 - Nonvolatile memory device and method for manufacturing same: According to one embodiment, a nonvolatile memory device includes a first interconnect, an insulating layer, a needle-like metal oxide, and a second interconnect. The insulating layer is provided on the first interconnect. The needle-like metal oxide pierces the insulating layer in a vertical direction. The second interconnect is provided on... Agent: Kabushiki Kaisha Toshiba

20120068148 - Nonvolatile memory element and fabrication method for nonvolatile memory element: A variable resistance nonvolatile memory element capable of suppressing a variation in resistance values is provided. A nonvolatile memory element according to the present invention includes: a silicon substrate (11); a lower electrode layer (102) formed on the silicon substrate (11); a variable resistance layer formed on the lower electrode... Agent:

20120068147 - Phase change memory device and fabrication thereof: A method for forming a phase change memory device is disclosed. A substrate with a bottom electrode thereon is provided. A heating electrode and a dielectric layer are formed on the bottom electrode, wherein the heating electrode is surrounded by the dielectric layer. The heating electrode is etched to form... Agent: Powerchip Semiconductor Corp.

20120068144 - Resistance random access memory: According to one embodiment, there are provided a first electrode, a second electrode, first and second variable-resistance layers that are arranged between the first electrode and the second electrode, and at least one non variable-resistance layer that is arranged so that positions of the first and second variable-resistance layers between... Agent: Kabushiki Kaisha Toshiba

20120068149 - Apparatus of memory array using finfets: In one or more embodiments, a semiconductor device a FinFET device and a second device. In one or more embodiments, the semiconductor device has a contact element coupled between a surface of the fin and the second device.... Agent:

20120068152 - Graphene light-emitting device and method of manufacturing the same: A graphene light-emitting device and a method of manufacturing the same are provided. The graphene light-emitting device includes a p-type graphene doped with a p-type dopant; an n-type graphene doped with an n-type dopant; and an active graphene that is disposed between the type graphene and the n-type graphene and... Agent: Samsung Led Co., Ltd.

20120068151 - Light emitting and lasing semiconductor methods and devices: The invention is applicable for use in conjunction with a light-emitting semiconductor structure that includes a semiconductor active region of a first conductivity type containing a quantum size region and having a first surface adjacent a semiconductor input region of a second conductivity type that is operative, upon application of... Agent:

20120068150 - Nanowire field effect transistors: A method for forming a nanowire field effect transistor (FET) device including forming a first silicon on insulator (SOI) pad region, a second SOI pad region, a third SOI pad region, a first SOI portion connecting the first SOI pad region to the second SOI pad region, and a second... Agent: International Business Machines Corporation

20120068154 - Graphene quantum dot light emitting device and method of manufacturing the same: A graphene quantum dot light emitting device includes: a first graphene; a graphene quantum dot layer disposed on the first graphene and including a plurality of graphene quantum dots; and a second graphene disposed on the graphene quantum dot layer. A method of manufacturing a graphene quantum dot light emitting... Agent: Samsung Led Co., Ltd.

20120068153 - Group iii nitride nanorod light emitting device and method of manufacturing thereof: A group III nitride nanorod light emitting device and a method of manufacturing thereof. The method includes preparing a substrate, forming an insulating film including one or more openings exposing parts of the substrate on the substrate, growing first conductive group III nitride nanorod seed layers on the substrate exposed... Agent:

20120068155 - Iii nitride semiconductor substrate, epitaxial substrate, and semiconductor device: In a semiconductor device 100, it is possible to prevent C from piling up at a boundary face between an epitaxial layer 22 and a group III nitride semiconductor substrate 10 by the presence of 30×1010 pieces/cm2 to 2000×1010 pieces/cm2 of sulfide in terms of S and 2 at %... Agent: Sumitomo Electric Industries, Ltd.

20120068156 - Inn nanowire based multifunctional nanocantilever sensors: Sensor are generally provided that include a layer of silicon oxide on a portion of a n+ layer to form an uneven surface where the layer of silicon oxide defines a thicker region than an exposed portion of the n+ layer. First and second metal contacts can be on the... Agent: University Of South Carolina

20120068157 - Transistor having graphene base: A transistor device having a graphene base for the transport of electrons into a collector is provided. The transistor consists of a heterostructure comprising an electron emitter, an electron collector, and a graphene material base layer consisting of one or more sheets of graphene situated between the emitter and the... Agent: The Government Of The United States Of America, As Represented By The Secretary Of The Navy

20120068158 - Infrared light detector: Provided is an infrared light detector 100 with a plurality of first electronic regions 10 which are electrically independent from each other and arranged in a specific direction, formed by dividing a single first electronic region. An outer electron system which is electrically connected to each of the plurality of... Agent: Japan Science And Technology Agency

20120068161 - Method for forming graphene using laser beam, graphene semiconductor manufactured by the same, and graphene transistor having graphene semiconductor: A method for forming graphene includes introducing a substrate and a carbon-containing reactant source into a chamber, and radiating a laser beam onto the substrate to decompose the carbon-containing reactant source and form graphene over the substrate using carbon atoms generated by decomposition of the carbon-containing reactant source. A carbon-containing... Agent:

20120068159 - Nonvolatile semiconductor memory device: According to one embodiment, a nonvolatile semiconductor memory device includes a first memory portion. The first memory portion includes a first base semiconductor layer, a first electrode, a first channel semiconductor layer, a first base tunnel insulating film, a first channel tunnel insulating, a first charge retention layer and a... Agent: Kabushiki Kaisha Toshiba

20120068160 - Semiconductor device and method for fabricating the same: A semiconductor device according to an embodiment, includes a catalytic metal film, a graphene film, a contact plug, and an adjustment film. The catalytic metal film is formed above a substrate. The graphene film is formed on the catalytic metal film. The contact plug is connected to the graphene film.... Agent: Kabushiki Kaisha Toshiba

20120068166 - Aromatic chalcogen compounds and their use: This invention relates to dibenzothiopyran compounds. This invention also relates to layers and devices including at least one of these compounds.... Agent: E. I. Du Pont De Nemours And Company

20120068168 - Carbazole-based phosphine oxide compound, and organic electroluminescent device including the same: The present invention relates to a carbazole-based phosphine oxide compound, and an organic electroluminescent device including the same. According to the present invention, provided are a compound for an organic electroluminescent device which can improve the thermal stability and efficiency characteristics which are unstable and low, respectively, corresponding to problems... Agent: Industry-academic Cooperation Foundation, Dankook University

20120068163 - Color conversion film containing a conjugated high molecular weight copolymer and multicolor light-emitting organic el device including the same: Provided are a color conversion film that maintains sufficient converted light intensity over a long period of time without increasing its thickness and a multicolor light-emitting organic EL device that includes the color conversion film. The color conversion film contains a conjugated high molecular weight copolymer having a structure of... Agent: Fuji Electric Holdings Co., Ltd.

20120068164 - Material for organic electroluminescent element and organic electroluminescent element employing the same: A material for organic electroluminescence devices for use as a host material in combination with at least one phosphorescent metal complex, which comprises a compound having a specific heterocyclic structure, is described. Also described is an organic electroluminescence device having an anode, a cathode and an organic thin film layer... Agent: Idemitsu Kosan Co., Ltd.

20120068170 - Materials for organic electroluminescent devices: The present invention describes indenocarbazole derivatives having electron- and hole-transporting properties, in particular for use in the emission and/or charge-transport layer of electroluminescent devices or as matrix material. The invention furthermore relates to a process for the preparation of the compounds according to the invention and to electronic devices comprising... Agent: Merck Patent Gmbh

20120068169 - Organic el display device and method for manufacturing the same: An organic EL display device (1) includes a first substrate (30), a second substrate (20) facing the first substrate (30), an organic EL element (4) formed on the first substrate (30) and provided between the first substrate (30) and the second substrate (20), a sealing member (5) provided between the... Agent: Sharp Kabushiki Kaisha

20120068165 - Organic electroluminescence element: An organic electroluminescence element including: an anode, a cathode, and at least one organic layer which includes a light emitting layer, and which is provided between the anode and the cathode, wherein at least one layer in the organic layer contains at least one selected from nitrogen-containing heterocyclic derivatives each... Agent:

20120068171 - Organic electroluminescent element: In an organic electroluminescent element, light extraction efficiency is enhanced. An organic electroluminescent element 1 is configured by laminating a substrate 2, a first electrode 3, an organic layer 4, and a second electrode 5 in this order. The organic layer 4 includes an emitting layer 43, and the emitting... Agent: Panasonic Electric Works Co., Ltd.

20120068162 - Permeation barrier for encapsulation of devices and substrates: A permeation barrier film structure for organic electronic devices includes one or more bilayers having a hybrid permeation barrier composition. Each of the one or more bilayers includes a first region having a first composition corresponding to a first CF4—O2 Plasma Reactive Ion Etch Rate and a second region having... Agent: Universal Display Corporation

20120068167 - Surface treatment method for electrodes, electrode, and process for producing organic electroluminescent element: p

20120068173 - Liquid crystal display device: A first transistor, a second transistor, a third transistor, a fourth transistor are provided. In the first transistor, a first terminal is electrically connected to a first wiring; a second terminal is electrically connected to a gate terminal of the second transistor; a gate terminal is electrically connected to a... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120068172 - Organic light emitting display device and method for manufacturing the same: An organic light emitting display device includes a substrate, a transparent electrode layer, a source/drain layer, an IGZO semiconductor layer, a first insulating layer, a gate layer, a second insulating layer and an organic light emitting diode. The organic light-emitting display device can have a simplified manufacturing process. In addition,... Agent: E Ink Holdings Inc.

20120068174 - Electrical mask inspection: An apparatus and method for electrical mask inspection is disclosed. A scan chain is formed amongst two metal layers and a via layer. One of the three layers is a functional layer under test, and the other two layers are test layers. A resistance measurement of the scan chain is... Agent: International Business Machines Corporation

20120068177 - Measuring apparatus: A measuring apparatus including a first chip, a first circuit layer, a first heater, a first stress sensor and a second circuit layer is provided. The first chip has a first through silicon via, a first surface and a second surface opposite to the first surface. The first circuit layer... Agent: Industrial Technology Research Institute

20120068175 - Method to optimize and reduce integrated circuit, package design, and verification cycle time: A method for fabricating an integrated circuit (IC) product and IC product formed thereby. The method includes designing an IC package having a plurality of IC connection sets, each configured to be connected to a corresponding IC selected from among a plurality of ICs, each having different functionality. Various IC... Agent: Qualcomm Incorporated

20120068176 - Semiconductor device and method of manufacturing semiconductor device: According to one embodiment, there is provided a semiconductor device including a semiconductor substrate, an edge seal, a plurality of pad pieces, and an insulating film pattern. The semiconductor substrate includes a chip area formed at an inward side of the semiconductor substrate when viewed in a direction perpendicular to... Agent: Kabushiki Kaisha Toshiba

20120068178 - Trench polysilicon diode: Embodiments of the present invention include a method of manufacturing a trench transistor. The method includes forming a substrate of a first conductivity type and implanting a dopant of a second conductivity type, forming a body region of the substrate. The method further includes forming a trench in the body... Agent: Vishay-siliconix

20120068180 - Methods of forming low interface resistance contacts and structures formed thereby: Methods and associated structures of forming a microelectronic device are described. Those methods may include forming a tapered contact opening in an ILD disposed on a substrate, wherein a source/drain contact area is exposed, preamorphizing a portion of a source drain region of the substrate, implanting boron into the source/drain... Agent:

20120068179 - Semiconductor device and manufacturing method thereof: According to embodiments, there is provided a semiconductor device, including: a logic circuit; an interlayer insulating film formed above the logic circuit; an amorphous silicon layer including: a non-silicide layer formed on the interlayer insulating film; and a silicide layer formed on the non-silicide layer; a TFT formed on the... Agent: Kabushiki Kaisha Toshiba

20120068181 - Integrated circuit device and method for manufacturing integrated circuit device: An object of the present invention is to provide a structure of a thin film circuit portion and a method for manufacturing a thin film circuit portion by which an electrode for connecting to an external portion can be easily formed under a thin film circuit. A stacked body including... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120068182 - Semiconductor device, method for manufacturing same, and display device: A semiconductor device of the present invention is a semiconductor device including a thin film transistor and a thin film diode. A semiconductor layer (113) of the thin film transistor and a semiconductor layer (114) of the thin film diode are both crystalline semiconductor layers. The semiconductor layer (113) of... Agent: Sharp Kabushiki Kaisha

20120068183 - Power-insulated-gate field-effect transistor: To provide a power MISFET using oxide semiconductor. A gate electrode, a source electrode, and a drain electrode are formed so as to interpose a semiconductor layer therebetween, and a region of the semiconductor layer where the gate electrode and the drain electrode do not overlap with each other is... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120068184 - Dislocation reduction in non-polar iii-nitride thin films: Lateral epitaxial overgrowth of non-polar III-nitride seed layers reduces threading dislocations in the non-polar III-nitride thin films. First, a thin patterned dielectric mask is applied to the seed layer. Second, a selective epitaxial regrowth is performed to achieve a lateral overgrowth based on the patterned mask. Upon regrowth, the non-polar... Agent: The Regents Of The University Of California

20120068185 - Organic light emitting diode display and method for manufacturing the same: An organic light emitting diode (OLED) display and a method for manufacturing the same are provided. The OLED display includes a substrate, an active layer and a capacitor lower electrode positioned on the substrate, a gate insulating layer positioned on the active layer and the capacitor lower electrode, a gate... Agent:

20120068192 - Crystal growth of m-plane and semipolar planes of (al, in, ga, b)n on various substrates: A method of reducing threading dislocation densities in non-polar such as a-{11-20} plane and m-{1-100} plane or semi-polar such as {10-1n} plane III-Nitrides by employing lateral epitaxial overgrowth from sidewalls of etched template material through a patterned mask. The method includes depositing a patterned mask on a template material such... Agent: The Regents Of The University Of California

20120068188 - Defects annealing and impurities activation in iii-nitride compound semiconductors: A GaN sample in a sealed enclosure is heated very fast to a high temperature above the point where GaN is thermodynamically stable and is then cooled down very fast to a temperature where it is thermodynamically stable. The time of the GaN exposure to a high temperature range above... Agent: The Government Of The United States Of America, As Represented By The Secretary Of The Navy

20120068186 - Electronic device: An electronic device includes a carrier, a plurality of pins, and an electronic circuit that includes a first semiconductor chip and a second semiconductor chip. The first semiconductor chip is attached to the carrier and the second semiconductor chip is attached to one of the plurality of pins.... Agent:

20120068190 - Gallium nitride devices with electrically conductive regions: Semiconductor structures comprising a III-nitride (e.g., gallium nitride) material region and methods associated with such structures are provided. In some embodiments, the structures include an electrically conductive material (e.g., gold) separated from certain other region(s) of the structure (e.g., a silicon substrate) by a barrier material in order to limit,... Agent: International Rectifier Corporation

20120068189 - Method for vertical and lateral control of iii-n polarity: Disclosed herein is a method of: depositing a patterned mask layer on an N-polar GaN epitaxial layer of a sapphire, silicon, or silicon carbide substrate; depositing an AlN inversion layer on the open areas; removing any remaining mask; and depositing a III-N epitaxial layer to simultaneously produce N-polar material and... Agent: The Government Of The United States Of America, As Represented By The Secretary Of The Navy

20120068191 - Method of controlling stress in group-iii nitride films deposited on substrates: Methods of controlling stress in GaN films deposited on silicon and silicon carbide substrates and the films produced therefrom are disclosed. A typical method comprises providing a substrate and depositing a graded gallium nitride layer on the substrate having a varying composition of a substantially continuous grade from an initial... Agent: The Regents Of The University Of California

20120068187 - Solid state lighting devices with improved color uniformity and methods of manufacturing: Solid state lighting (SSL) devices with good color uniformity and methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes a support structure, an SSL die in the support structure, and a converter material at least partially encapsulating the SSL die. The converter material is configured to... Agent: Micron Technology, Inc.

20120068195 - Method for manufacturing silicon carbide substrate and silicon carbide substrate: A method for manufacturing a silicon carbide substrate includes the steps of: preparing a plurality of SiC substrates each made of single-crystal silicon carbide; forming a base layer made of silicon carbide and holding the plurality of SiC substrates, which are arranged side by side when viewed in a planar... Agent: Sumitomo Electric Industries, Ltd.

20120068194 - Silicon carbide semiconductor devices: A method of manufacturing a semiconductor device, wherein the method comprises applying a first layer comprising silicon to a second layer comprising silicon carbide, wherein an interface is defined between the first and second layers; and oxidising sonic or all of the first layer.... Agent:

20120068193 - Structure and method for increasing strain in a device: A method and structure are disclosed for increasing strain in a device, specifically an n-type field effect transistor (NFET) complementary metal-oxide-semiconductor (CMOS) device. Embodiments of this invention include growing an epitaxial layer, performing a cold carbon or cluster carbon pre-amorphization implantation to implant substitutional carbon into the epitaxial layer, forming... Agent: International Business Machines Corporation

20120068197 - Light-emitting element, light-emitting device, and electronic device: A light-emitting element is provided, including a first electrode and a second electrode, a first layer including first and second organic compounds, the first layer being formed between the first electrode and the second electrode wherein the first organic compound is capable of emitting a first light and the second... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120068196 - Semiconductor light-emitting device and a method of manufacture thereof: A semiconductor light-emitting device comprises a semiconductor layer structure disposed over a substrate. The layer structure includes an active region disposed between a first layer and a second layer. One or more cavities are present in the layer structure, each cavity being coincident with a threading dislocation and extending from... Agent: Sharp Kabushiki Kaisha

20120068202 - Active matrix substrate, method of manufacturing the same and display equipment using active matrix substrate manufactured by the same method: The present invention provides an active matrix substrate and a method of manufacturing the same by decreasing the number of photolithographic processes to reduce the manufacturing cost. The invention also provides a display device using an active matrix substrate manufactured by said manufacturing method. In a process for preparing pixels... Agent: Sharp Kabushiki Kaisha

20120068198 - High density multi-chip led devices: High density multi-chip LED devices are described. Embodiments of the present invention provide high-density, multi-chip LED devices with relatively high efficiency and light output in a compact size. An LED device includes a plurality of interconnected LED chips and an optical element such as a lens. The LED chips may... Agent: Cree, Inc.

20120068200 - Liquid crystal display device and method for manufacturing the same: A liquid crystal display device with a built-in touch screen, which uses a common electrode as a touch-sensing electrode including an intersection of a gate line and a data line to define a pixel region, a gate metal disposed in a central portion of the pixel, an insulating layer formed... Agent:

20120068201 - Thin film deposition apparatus, method of manufacturing organic light-emitting display device by using the apparatus, and organic light-emitting display device manufactured by using the method: A thin film deposition apparatus, a method of manufacturing an organic light-emitting display device by using the thin film deposition apparatus, and an organic light-emitting display device manufactured by using the method. A thin film deposition apparatus for forming a thin film on a substrate includes a first chamber in... Agent:

20120068199 - Thin film deposition apparatus, method of manufacturing organic light-emitting display device by using the thin film deposition apparatus, and organic light-emitting display device manufactured by using the method: A thin film deposition apparatus that is suitable for manufacturing large-sized display devices on a mass scale and that can be used for high-definition patterning, a method of manufacturing an organic light-emitting display device by using the thin film deposition apparatus, and an organic light-emitting display device manufactured by using... Agent:

20120068205 - Led light engine and method of manufacture thereof: A light emitting diode (LED) light engine includes a solid transparent dome mounted on one or more LED dies to form a base module, a flexible sheath having embedded therein a phosphor that converts light of a first wavelength range to light of a second wavelength range, the sheath being... Agent: Osram Sylvania Inc.

20120068204 - Led module for modified lamps and modified led lamp: An LED module includes a printed circuit board (PCB) or a surface mount device (SMD) mount, an LED chip mounted on the PCB or the SMD mount, a cover mounted on the LED chip and a surface of the PCB or the SMD mount which surrounds the LED chip. The... Agent: Tridonic Jennersdorf Gmbh

20120068203 - Light emitting device: A light emitting device includes a package body, a light emitting diode, a transparent resin material, and a wire. The package body includes a bottom part and a side part. The bottom part includes a first electrode and a second electrode electrically connecting the upper surface and the bottom surface... Agent:

20120068206 - Close-packed array of light emitting devices: A close-packed array of light emitting diodes includes a nonconductive substrate having a plurality of elongate channels extending therethrough from a first side to a second side, where each of the elongate channels in at least a portion of the substrate includes a conductive rod therein. The conductive rods have... Agent:

20120068207 - Optical device, semiconductor wafer, method of producing optical device, and method of producing semiconductor wafer: Provided is an optical device including a base wafer containing silicon, a plurality of seed crystals disposed on the base wafer, and a plurality of Group 3-5 compound semiconductors lattice-matching or pseudo lattice-matching the plurality of seed crystals. At least one of the Group 3-5 compound semiconductors has a photoelectric... Agent: Sumitomo Chemical Company, Limited

20120068211 - Led package structure: An LED (light-emitting diode) package structure includes a substrate, at least one LED unit disposed on the substrate for generating a light beam, and an optical correcting element disposed within a travelling path of the light beam. The optical correcting element includes a transparent body disposed on and cooperating with... Agent:

20120068213 - Light emissive ceramic laminate and method of making same: A laminated composite includes a wavelength-converting layer and a non-emissive blocking layer, wherein the emissive layer includes a garnet host material and an emissive guest material, and the non-emissive blocking layer includes a non-emissive blocking material. The metallic element constituting the non-emissive blocking material has an ionic radius which is... Agent: Nitto Denko Corporation

20120068210 - Light emitting component and manufacturing method thereof: A light emitting component, and more particularly to a white light emitting component with high light emitting efficiency are provided. The white light emitting component with high light emitting efficiency has properties of high driving voltage, high color render index and concentrated optical density. The light emitting component includes a... Agent: Intematix Technology Center Corporation

20120068215 - Light emitting device: A light emitting device is provided. According to an embodiment, the light emitting device includes a first layer to diffuse first light emitted from the active layer, and a second layer to convert the diffused first light into second light having a different wavelength than the first light. Accordingly, it... Agent: Lg Innotek Co., Ltd.

20120068217 - Light emitting device: A light emitting device includes an active layer; at least a portion of the active layer constitutes a gain region. The gain region is continuous from a first end surface and a second end surface. The gain region includes a first portion extending from the first end surface to a... Agent: Seiko Epson Corporation

20120068212 - Light-emitting device: According to one embodiment, a light emitting device includes a light emitting element, a light reflector and a sealing resin layer. The light emitting element has a first major surface and a side surface and has an optical axis of emitted light perpendicular to the first major surface. The light... Agent: Kabushiki Kaisha Toshiba

20120068208 - Micro-structure phosphor coating: An optical emitter includes micro-structure phosphor coating on a light-emitting diode die mounted on a package substrate. The micro-structures are transferred onto a micro-structure phosphor coating precursor by patterning and curing the precursor or by curing the precursor through a mold. The micro-structures are half spheroids, three-sided pyramids, or six-sided... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120068214 - Optoelectronic device and method for manufacturing the same: An optoelectronic device is provided that includes a substrate having a surface and a normal direction perpendicular to the surface, a first semiconductor layer formed on the surface, and at least one hollow component formed between the first semiconductor layer and the surface. A method of fabricating an optoelectronic device... Agent: Epistar Corporation

20120068216 - Photoelectric device, method of fabricating the same and packaging apparatus for the same: A photoelectric device includes a ceramic substrate defining a cavity in a top thereof and having two electrode layers beside the cavity. A photoelectric die is received in the cavity. A first packing layer is received in the cavity and encapsulates the photoelectric die. The photoelectric die is electrically connected... Agent: Advanced Optoelectronic Technology, Inc.

20120068209 - Semiconductor light emitting devices with optical coatings and methods of making same: A method of making a semiconductor light emitting device having one or more light emitting surfaces includes positioning a stencil on a substrate such that a chip disposed on the substrate is positioned within an opening in the stencil. Phosphor-containing material is deposited in the opening to form a coating... Agent:

20120068218 - Thermally efficient packaging for a photonic device: The present disclosure provides a method of packaging for a photonic device, such as a light-emitting diode device. The packaging includes an insulating structure. The packaging includes first and second conductive structures that each extend through the insulating structure. A substantial area of a bottom surface of the light-emitting diode... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120068219 - Microencapsulated particles and process for manufacturing same: Microencapsulated particles having improved resistance to moisture and extended release capabilities are produced by microencapsulating the particles in a film-forming, cross-linked, hydrolyzed polymer.... Agent: Encap Technologies, LLC

20120068220 - Reverse conducting-insulated gate bipolar transistor: According to one embodiment, in a reverse conducting-insulated gate bipolar transistor, the buffer layer is provided on the backside of the second base layer, has a higher impurity concentration in comparison with the second base layer. The first collector layer is in contact with a portion of the backside of... Agent: Kabushiki Kaisha Toshiba

20120068221 - Semiconductor device: A semiconductor device includes a base layer, a second conductivity type semiconductor layer, a first insulating film, and a first electrode. The first insulating film is provided on an inner wall of a plurality of first trenches extending from a surface of the second conductivity type semiconductor layer toward the... Agent: Kabushiki Kaisha Toshiba

20120068222 - Semiconductor device and method for manufacturing the same: According to an embodiment, a semiconductor device includes a first trench being provided in an N+ substrate. An N layer, an N− layer, a P layer, and an N+ layer are formed in a stacked manner to cover the first trench. The semiconductor device includes second and third trenches. The... Agent: Kabushiki Kaisha Toshiba

20120068223 - Bidirectional protection component: A bidirectional protection component formed in a semiconductor substrate of a first conductivity type including a first implanted area of the first conductivity type, an epitaxial layer of the second conductivity type on the substrate and the first implanted area, a second area of the first conductivity type on the... Agent: Stmicroelectronics (tours) Sas

20120068224 - Method of producing semiconductor wafer, and semiconductor wafer: A method of producing a semiconductor wafer suited to form types of devices such as HBT and FET on a single semiconductor wafer is provided. The method, by repeating steps including introducing, into a reaction chamber for forming a semiconductor by crystal growth, a first-impurity gas containing an element or... Agent: Sumitomo Chemical Company, Limited

20120068225 - Bispectral multilayer photodiode detector and method for manufacturing such a detector: A bispectral detector comprising upper and lower semiconductor layers of a first conductivity type in order to absorb a first and a second electromagnetic spectrum, separated by an intermediate layer that forms a barrier; semiconductor zones of a second conductivity type implanted in upper layer and lower layer and each... Agent: Commissariat A L'energie Atomique Et Aux Energies Alternatives

20120068226 - Formation of devices by epitaxial layer overgrowth: Methods and structures are provided for formation of devices on substrates including, e.g., lattice-mismatched materials, by the use of aspect ratio trapping and epitaxial layer overgrowth. A method includes forming an opening in a masking layer disposed over a substrate that includes a first semiconductor material. A first layer, which... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120068227 - Semiconductor device: A normally off semiconductor device with a reduced off-state leakage current, which is applicable to a power switching element, includes: a substrate; an undoped GaN layer formed above the substrate; an undoped AlGaN layer formed on the undoped GaN layer; a source electrode and a drain electrode, formed on the... Agent:

20120068228 - Heterojunction bioplar transistor structure with gapsbas base: A heterojunction bipolar transistor (HBT) structure with GaPSbAs base is disclosed. The HBT structure generally includes a substrate, a subcollector layer, a collector layer, a base layer, an emitter layer, an emitter cap layer, and a contact layer laminated from bottom to top sequentially, and optionally may further comprise a... Agent:

20120068229 - Massively parallel interconnect fabric for complex semiconductor devices: An embodiment of this invention uses a massive parallel interconnect fabric (MPIF) at the flipped interface of a core die substrate (having the core logic blocks) and a context die (used for in circuit programming/context/customization of the core die substrate), to produce ASIC-like density and FPGA-like flexibility/programmability, while reducing the... Agent:

20120068230 - Image sensor capable of increasing photosensitivity and method for fabricating the same: An image sensor capable of overcoming a decrease in photo sensitivity resulted from using a single crystal silicon substrate, and a method for fabricating the same are provided. An image sensor includes a single crystal silicon substrate, an amorphous silicon layer formed inside the substrate, a photodiode formed in the... Agent: Crosstek Capital, LLC

20120068231 - Vertical discrete devices with trench contacts and associated methods of manufacturing: The present technology is related generally to vertical discrete devices with a trench at the topside of the vertical discrete devices. The trench is filled with a conducting material. In this approach, a drain or cathode of the vertical discrete devices is electrically connected to the topside to result in... Agent:

20120068232 - Method for manufacturing semiconductor device: The present invention relates to a method for manufacturing a semiconductor device, and provides to reduce a contact resistance of a landing plug by forming the landing plug in such a manner that a polysilicon layer is deposited only on the surface of a landing plug contact hole, and a... Agent: Hynix Semiconductor Inc.

20120068234 - Method for self-aligning a stop layer to a replacement gate for self-aligned contact integration: Semiconductor devices with replacement gate electrodes and integrated self aligned contacts are formed with enhanced gate dielectric layers and improved electrical isolation properties between the gate line and a contact. Embodiments include forming a removable gate electrode on a substrate, forming a self aligned contact stop layer over the electrode... Agent: Globalfoundries Inc.

20120068233 - Transistors having stressed channel regions and methods of forming transistors having stressed channel regions: A method of forming a field effect transistor and a field effect transistor. The method includes (a) forming gate stack on a silicon layer of a substrate; (b) forming two or more SiGe filled trenches in the silicon layer on at least one side of the gate stack, adjacent pairs... Agent: International Business Machines Corporation

20120068235 - Integrated circuit: In accordance with an embodiment, an integrated circuit includes a first spin transistor and a second spin transistor. The first spin transistor has a first channel length. The first spin transistor includes a first node and a second node apart from the first node The second spin transistor is connected... Agent: Kabushiki Kaisha Toshiba

20120068236 - Non-uniform switching based non-volatile magnetic based memory: A non-uniform switching based non-volatile magnetic memory element includes a fixed layer, a barrier layer formed on top of the fixed layer, a first free layer formed on top of the barrier layer, a non-uniform switching layer (NSL) formed on top of the first free layer, and a second free... Agent: Avalanche Technology, Inc.

20120068238 - Low impedance transmisson line: Transmission lines employing transmission line units or elements within integrated circuits (ICs) are well-known. Typically, different heights for these transmission line units can vary the characteristics of the cell (and transmission line), and there is typically a tradeoff between impedance and space (layout) specifications. Here, a transmission line is provided,... Agent: Texas Instruments Incorporated

20120068237 - Self-aligned strap for embedded capacitor and replacement gate devices: After forming a planarization dielectric layer in a replacement gate integration scheme, disposable gate structures are removed and a stack of a gate dielectric layer and a gate electrode layer is formed within recessed gate regions. Each gate electrode structure is then recessed below a topmost surface of the gate... Agent: International Business Machines Corporation

20120068239 - Semiconductor memory device having a floating body capacitor, memory cell array having the same and method of manufacturing the same: A semiconductor memory device having a floating body capacitor. The semiconductor memory device can perform a memory operation using the floating body capacitor. The semiconductor memory device includes an SOI substrate having a staked structure in which a base substrate having a conducting surface, a buried insulating layer and a... Agent: Hynix Semiconductor Inc.

20120068241 - Nonvolatile semiconductor memory device and method of manufacturing the same: According to one embodiment, a memory device includes first and second fin type stacked structures each includes first to i-th memory strings (i is a natural number except 1) that are stacked in a first direction, the first and second fin type stacked structures which extend in a second direction... Agent:

20120068240 - Semiconductor device and method using a sacrificial layer: A method of manufacturing a semiconductor device is disclosed. The method includes forming a first conductive layer over a substrate. The first conductive layer has a top surface and sidewalls, wherein the first conductive layer comprises an overhang of a non-conductive material along the sidewalls. The method further includes forming... Agent:

20120068245 - Non-volatile memory devices including blocking insulation patterns with sub-layers having different energy band gaps: A non-volatile memory device may include a semiconductor substrate and an isolation layer on the semiconductor substrate wherein the isolation layer defines an active region of the semiconductor substrate. A tunnel insulation layer may be provided on the active region of the semiconductor substrate, and a charge storage pattern may... Agent:

20120068243 - Semiconductor device and manufacturing method thereof: An improvement is achieved in the performance of semiconductor device including a nonvolatile memory. In a split-gate nonvolatile memory, between a memory gate electrode and a p-type well and between a control gate electrode and the memory gate electrode, an insulating film is formed. Of the insulating film, the portion... Agent: Renesas Electronics Corporation

20120068242 - Semiconductor devices and methods of fabricating the same: A semiconductor device includes horizontal patterns on a substrate and the horizontal patterns have at least one opening therein, a pad pattern in an upper region of the opening, an insulating gap fill structure in the opening, the insulating gap fill structure is between the pad pattern and the substrate,... Agent:

20120068244 - Semiconductor memory device and method for manufacturing same: According to an embodiment, a semiconductor memory device includes a plurality of multi-level memory cells provided on a major surface of a semiconductor substrate of a first conductivity type. A first semiconductor region of a second conductivity type is selectively provided in the surface of the semiconductor substrate between the... Agent: Kabushiki Kaisha Toshiba

20120068248 - Power semiconductor device: According to one embodiment, a semiconductor device, includes an element unit including a vertical-type MOSFET, the vertical-type MOSFET in including a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a fourth semiconductor layer, a fifth semiconductor layer sequentially stacked in order, an impurity concentration of the second... Agent: Kabushiki Kaisha Toshiba

20120068246 - Semiconductor memory device and method of manufacturing the same: In one embodiment, a method of manufacturing a semiconductor memory device is disclosed. The method can comprise forming a tunnel insulating film on a substrate, forming a charge storage layer including a conductor on the tunnel insulating film, forming an isolation trench which isolate the charge storage layer and the... Agent:

20120068247 - Three-dimensional semiconductor memory device: Provided are three-dimensional semiconductor devices. The devices may include gap-fill insulating patterns configured to upwardly extend from a substrate and an electrode structure defined by sidewalls of the gap-fill insulating patterns. Vertical structures may be provided between adjacent ones of the gap-fill insulating patterns to penetrate the electrode structure, and... Agent:

20120068249 - Nonvolatile memory device and method of manufacturing the same: The nonvolatile memory device includes a semiconductor substrate, and a device isolation layer defining an active region in the semiconductor substrate. The device isolation layer includes a top surface lower than a top surface of the semiconductor substrate, such that a side-upper surface of the active region is exposed. A... Agent:

20120068250 - Semiconductor device and manufacturing method thereof: According to one embodiment, a semiconductor device includes a semiconductor region, a tunnel insulating film provided on the semiconductor region, a charge storage insulating film provided on the tunnel insulating film and having a hafnium oxide including a cubic region, a block insulating film provided on the charge storage insulating... Agent:

20120068256 - Non-volatile semiconductor memory device: An dielectric film is formed above the semiconductor substrate. A first conductive layer is formed in the dielectric film and extending in a first direction. The first conductive layer is connected to a first select transistor. A second conductive layer formed in the dielectric film and extending in the first... Agent: Kabushiki Kaisha Toshiba

20120068253 - Nonvolatile semiconductor memory device and method for manufacturing the same: According to one embodiment, a nonvolatile semiconductor memory device includes a memory region and a non-memory region. The memory region includes a stacked structural body, a semiconductor pillar, a memory layer, an inner insulating film and an outer insulating film. The stacked structural body includes a plurality of electrode films... Agent: Kabushiki Kaisha Toshiba

20120068254 - Nonvolatile semiconductor memory device and method of manufacturing the same: According to one embodiment, a memory device includes a semiconductor substrate, first, second, third and fourth fin-type stacked layer structures, each having memory strings stacked in a first direction perpendicular to a surface of the semiconductor substrate, and each extending to a second direction parallel to the surface of the... Agent:

20120068251 - Semiconductor memory device: According to one embodiment, a semiconductor memory device includes a multilayer body, a block layer, a charge storage layer, a tunnel layer, and a semiconductor pillar. The multilayer body includes a plurality of insulating films and electrode films alternately stacked. The multilayer body includes a through hole extending in stacking... Agent: Kabushiki Kaisha Toshiba

20120068252 - Semiconductor memory device: According to one embodiment, a semiconductor memory device includes a substrate, a multilayer body, a semiconductor member and a charge storage layer. The multilayer body is provided on the substrate, with a plurality of insulating films and electrode films alternately stacked, and includes a first staircase and a second staircase... Agent: Kabushiki Kaisha Toshiba

20120068257 - Semiconductor memory device: According to one embodiment, there is provided a semiconductor memory device including an element region, a first gate insulating film, a charge accumulation layer, a second gate insulating film, a control gate electrode, and a control gate electrode. The charge accumulation layer covers the first gate insulating film. The second... Agent: Kabushiki Kaisha Toshiba

20120068255 - Three-dimensional semiconductor memory devices: Three-dimensional (3D) nonvolatile memory devices include a substrate having a well region of second conductivity type (e.g., P-type) therein and a common source region of first conductivity type (e.g., N-type) on the well region. A recess is provided, which extends partially (or completely) through the common source region. A vertical... Agent: Samsung Electronics Co., Ltd.

20120068258 - Semiconductor device and method for manufacturing same: According to one embodiment, a semiconductor device includes a first main electrode, a control electrode, an extraction electrode, a second insulating film, a plurality of contact electrodes, and a control terminal. The first main electrode is electrically connected to a first semiconductor region of a first conductivity type and a... Agent: Kabushiki Kaisha Toshiba

20120068259 - Three dimensional semiconductor memory device and method for fabricating the same: A three-dimensional semiconductor device includes a stacked structure including a plurality of conductive layers stacked on a substrate, a distance along a first direction between sidewalls of an upper conductive layer and a lower conductive layer being smaller than a distance along a second direction between sidewalls of the upper... Agent:

20120068260 - Method for producing a structure element and semiconductor component comprising a structure element: A semiconductor component includes a semiconductor body having a surface and a cutout in the semiconductor body. The cutout extends from the surface of the semiconductor body into the semiconductor body in a direction perpendicular to the surface. The cutout has a base and at least one sidewall. The component... Agent: Infineon Technologies Austria Ag

20120068261 - Replacement metal gate structures for effective work function control: A stack of a barrier metal layer and a first-type work function metal layer is deposited in replacement metal gate schemes. The barrier metal layer can be deposited directly on the gate dielectric layer. The first-type work function metal layer is patterned to be present only in regions of a... Agent: International Business Machines Corporation

20120068262 - Integrated mosfet device and method with reduced kelvin contact impedance and breakdown voltage: A MOSFET device and fabrication method are disclosed. The MOSFET has a drain in chip plane with an epitaxial layer overlay atop. The MOSFET further comprises: a Kelvin-contact body and an embedded Kelvin-contact source; a trench gate extending into the epitaxial layer; a lower contact trench extending through the Kelvin-contact... Agent:

20120068263 - Power switching semiconductor devices including rectifying junction-shunts: A semiconductor device includes a drift layer and a body region that forms a p-n junction with the drift layer. A contactor region is in the body region, and a shunt channel region extends through the body region from the contactor region to the drift layer. The shunt channel region... Agent:

20120068264 - Forming narrow fins for finfet devices using asymmetrically spaced mandrels: A method of forming fins for fin-shaped field effect transistor (finFET) devices includes forming a plurality of sacrificial mandrels over a semiconductor substrate. The plurality of sacrificial mandrels are spaced apart from one another by a first distance along a first direction, and by a second distance along a second... Agent: International Business Machines Corporation

20120068266 - Semiconductor device and method for manufacturing the same: A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum, scandium, titanium, vanadium, chrome, manganese, copper, zinc,... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120068265 - Wiring layer structure and process for manufacture thereof: This wiring layer structure includes: an underlying substrate of a semiconductor substrate or a glass substrate; an oxygen-containing Cu layer or an oxygen-containing Cu alloy layer which is formed on the underlying substrate; an oxide layer containing at least one of Al, Zr, and Ti which is formed on the... Agent: Mitsubishi Materials Corporation

20120068267 - Strained devices, methods of manufacture and design structures: Strained Si and strained SiGe on insulator devices, methods of manufacture and design structures is provided. The method includes growing an SiGe layer on a silicon on insulator wafer. The method further includes patterning the SiGe layer into PFET and NFET regions such that a strain in the SiGe layer... Agent: International Business Machines Corporation

20120068269 - Producing a perfect p-n junction: This patent disclosure presents circuits, system, and method to produce an ideal memory cell and a method to produce a perfect PN junction without undesirable junction voltage and leakage current. These new inventions finally perfect the art to produce PN junction diode sixty years after PN junction diode was invented... Agent:

20120068270 - Semiconductor device and manufacturing method of the device: A semiconductor device includes a first transistor including a gate electrode formed on semiconductor substrate with a gate insulating film interposed therebetween, a first sidewall formed on each side surface of the first gate electrode, and a source/drain diffusion layer; and a second transistor including a gate electrode formed on... Agent: Panasonic Corporation

20120068268 - Transistor structure and method of fabricating the same: A method of fabricating a transistor structure includes the step of providing a substrate having a gate thereon. Then, a first spacer is formed at two sides of the gate. After that, an LDD region is formed in the substrate at two sides of the gate. Later, a second spacer... Agent:

20120068272 - Conductive layers for hafnium silicon oxynitride: Electronic apparatus and methods of forming the electronic apparatus include HfSiON for use in a variety of electronic systems. In various embodiments, conductive material is coupled to a dielectric containing HfSiON, where such conductive material may include one or more monolayers of titanium nitride, tantalum, or combinations of titanium nitride... Agent:

20120068271 - Manufacturing method of semiconductor device: After forming a semiconductor film over a substrate, a Ni film is deposited over the semiconductor film while heating the substrate, thereby forming Ni silicide on the semiconductor film. Alternatively, after forming a semiconductor film over a substrate, a Ni film is deposited over the semiconductor film while heating the... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120068273 - Stressed barrier plug slot contact structure for transistor performance enhancement: A method for forming a slot contact structure for transistor performance enhancement. A contact opening is formed to expose a contact region, and a slot contact is disposed within the contact opening in order to induce a stress on an adjacent channel region. In an embodiment, a stress inducing barrier... Agent:

20120068274 - Semiconductor device: According to one embodiment, a semiconductor device has a substrate comprising an element isolation area, a plurality of tetragonal active areas on the substrate separated by the element isolation area from each other, each of the active areas having an impurity diffusion area, a large active area comprising at least... Agent: Kabushiki Kaisha Toshiba

20120068275 - Semiconductor device and method for fabricating the same: A method for fabricating a semiconductor device includes forming a high-dielectric constant insulating film including a high-dielectric constant film; forming a first conductive film including an oxide film on an upper surface thereof and containing at least one of high melting point metal or a compound thereof; forming a second... Agent: Panasonic Corporation

20120068276 - Microstructure with an enhanced anchor: The present disclosure provides a microstructure device with an enhanced anchor and a narrow air gap. One embodiment of a microstructure device provided herein includes a layered wafer. The layered wafer includes a silicon handle layer, a buried oxide layer formed on the handle layer, and a silicon device layer... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120068278 - Pull up electrode and waffle type microstructure: The present invention generally relates to MEMS devices and methods for their manufacture. The cantilever of the MEMS device may have a waffle-type microstructure. The waffle-type microstructure utilizes the support beams to impart stiffness to the microstructure while permitting the support beam to flex. The waffle-type microstructure permits design of... Agent: Cavendish Kinetics Inc.

20120068277 - Semiconductor manufacturing and semiconductor device with semiconductor structure: Embodiments related to semiconductor manufacturing and semiconductor devices with semiconductor structure are described and depicted.... Agent:

20120068279 - Domain wall assisted spin torque transfer magnetresistive random access memory structure: A semiconductor memory device includes a first ferromagnetic layer magnetically pinned and positioned within a first region of a substrate; a second ferromagnetic layer approximate the first ferromagnetic layer; and a barrier layer interposed between the first ferromagnetic layer and the first portion of the second ferromagnetic layer. The second... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120068280 - Magnetic nano-ring device and method of fabrication: A magnetic nano-ring device and method of fabrication includes providing a substrate; forming at least one nano-pillar on the substrate; depositing a plurality of electrodes on the substrate; depositing an anti-ferromagnetic layer on a first electrode of the plurality of electrodes; depositing a first ferromagnetic layer on the anti-ferromagnetic layer;... Agent: U.s. Government As Represented By The Secretary Of The Army

20120068286 - Magnetic random access memory and method of manufacturing the same: According to one embodiment, a magnetic random access memory includes a selection element formed on a semiconductor substrate, an interlayer dielectric film formed above the selection element, a contact layer formed in the interlayer dielectric film, and electrically connected to the selection element, a lower electrode layer made of a... Agent: Kabushiki Kaisha Toshiba

20120068281 - Magnetic recording element and nonvolatile memory device: According to one embodiment, a magnetic recording element includes a stacked body including a first stacked unit and a second stacked unit. The first stacked unit includes a first ferromagnetic layer, a second ferromagnetic layer and a first nonmagnetic layer. Magnetization of the first ferromagnetic layer is substantially fixed in... Agent: Kabushiki Kaisha Toshiba

20120068284 - Magnetoresistive effect element and magnetic memory: According to one embodiment, a magnetoresistive effect element includes a recording layer including ferromagnetic material with perpendicular magnetic anisotropy to a film surface and a variable orientation of magnetization, a reference layer including ferromagnetic material with perpendicular magnetic anisotropy to a film surface and an invariable orientation of magnetization, a... Agent: Kabushiki Kaisha Toshiba

20120068285 - Magnetoresistive effect element, magnetic memory, and method of manufacturing magnetoresistive effect element: According to one embodiment, a magnetoresistive effect element includes a first magnetic layer including perpendicular anisotropy to a film surface and an invariable magnetization direction, the first magnetic layer having a magnetic film including an element selected from a first group including Tb, Gd, and Dy and an element selected... Agent: Kabushiki Kaisha Toshiba

20120068282 - Semiconductor device and manufacturing method of the same: There are provided a semiconductor substrate having a main surface, a magnetic tunnel junction structure located over the main surface of the semiconductor substrate and including a pin layer, a tunnel insulating layer, and a free layer, a lower insulating layer contacting a lower side surface of the magnetic tunnel... Agent: Renesas Electronics Corporation

20120068283 - Semiconductor storage device and method of manufacturing the same: A semiconductor storage device according to the present embodiment includes a selection element formed on a surface of a semiconductor substrate. A lower electrode is connected to the selection element. A magnetic tunnel junction element is provided on the lower electrode. An upper electrode is provided on the magnetic tunnel... Agent: Kabushiki Kaisha Toshiba

20120068287 - Highly sensitive photo-sensing element and photo-sensing device using the same: According to the present invention, a highly sensitive photo-sensing element and a sensor driver circuit are prepared by planer process on an insulating substrate by using only polycrystalline material. Both the photo-sensing element and the sensor driver circuit are made of polycrystalline silicon film. As the photo-sensing element, a photo... Agent:

20120068289 - Devices having enhanced electromagnetic radiation detection and associated methods: Photosensitive semiconductor devices and associated methods are provided. In one aspect, a semiconductor device can include a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate, where the semiconductor layer has a device surface opposite the semiconductor substrate. The device also includes at least one textured region coupled... Agent: Sionyx, Inc.

20120068291 - Image sensing device and method of manufacturing the same: According to one embodiment, a solid-state image sensing device includes a semiconductor substrate on which a plurality of pixels are arranged, a transparent substrate including a first through via provided in an opening formed in advance to extend through, an adhesive including a second through via connected to the first... Agent:

20120068288 - Manufacturing method of molded image sensor packaging structure with predetermined focal length and the structure using the same: A manufacturing method of a molded image sensor packaging structure with a predetermined focal length and the structure using the same are disclosed. The manufacturing method includes: providing a substrate; providing a sensor chip disposed on the substrate; providing a lens module set over the sensing area of the chip... Agent: Kingpak Technology Inc.

20120068292 - Polymerizable composition, and photosensitive layer, permanent pattern, wafer-level lens, solid-state imaging device and pattern forming method each using the composition: A polymerizable composition contains (A) a polymerization initiator that is an acetophenone-based compound or an acylphosphine oxide-based compound, (B) a polymerizable compound, (C) at least either a tungsten compound or a metal boride, and (D) an alkali-soluble binder.... Agent: Fujifilm Corporation

20120068293 - Semiconductor device having image sensor: A pixel area for generating an image signal corresponding to incident light is formed on a semiconductor substrate. A light-shielding layer is formed on the semiconductor substrate around the pixel area. The light-shielding layer has a slit near the pixel area and shields the incident light. A passivation film is... Agent:

20120068290 - Semiconductor device manufacturing method, semiconductor device, and camera module: According to one embodiment, an insulation film is formed over the surface, backside, and sides of a first substrate. Next, the insulation film formed over the surface of the first substrate is removed. Then, a joining layer is formed over the surface of the first substrate, from which the insulation... Agent: Kabushiki Kaisha Toshiba

20120068294 - Image sensor with decreased optical interference between adjacent pixels: An image sensor with decreased optical interference between adjacent pixels is provided. An image sensor, which is divided into a pixel region and a peripheral region, the image sensor including a photodiode formed in a substrate in the pixel region, first to Mth metal lines formed over the substrate in... Agent: Intellectual Ventures Ii LLC

20120068295 - Multilayer bispectral photodiode detector: This bispectral detector comprises a plurality of unitary elements for detecting a first and a second electromagnetic radiation range, consisting of a stack of upper and lower semiconductor layers of a first conductivity type which are separated by an intermediate layer that forms a potential barrier between the upper and... Agent: Commissariat A L'energie Atomique Et Aux Energies Alternatives

20120068296 - Semiconductor device: where a temperature-dependent resistance changing rate of an i-th semiconductor layer (i=1 to n) of the main element domain is RMi; a resistance ratio of the i-th semiconductor layer of the main element domain relative to the entire main element domain is kMi; a temperature-dependent resistance changing rate of the... Agent: Toyota Jidosha Kabushiki Kaisha

20120068297 - High voltage device having schottky diode: A high voltage device having a Schottky diode integrated with a MOS transistor includes a semiconductor substrate a Schottky diode formed on the semiconductor substrate, at least a first doped region having a first conductive type formed in the semiconductor substrate and under the Schottky diode, and a control gate... Agent:

20120068298 - Semiconductor device having super junction structure and method for manufacturing the same: A semiconductor device having a super junction structure includes: multiple first columns extending in a current flowing direction; and multiple second columns extending in the current flowing direction. The first and second columns are alternately arranged in an alternating direction. Each first column provides a drift layer. The first and... Agent: Denso Corporation

20120068299 - Transient voltage suppressors: The present invention relates a transient voltage suppressor (TVS) for directional ESD protection. The TVS includes: a conductivity type substrate; a first type lightly doped region, having a first type heavily doped region arranged therein; a second type lightly doped region, having a second type heavily doped region and a... Agent: Amazing Microelectronic Corp.

20120068302 - Electronic device and method for direct mounting of passive components: An electronic device including a semiconductor die, which has a top surface that is configured to operate as a printed circuit board so as to provide connections for at least one passive component, in particular a passive surface mounted device (SMD).... Agent: Texas Instruments Deutschland Gmbh

20120068300 - Inductive getter activation for high vacuum packaging: An approach to activating a getter within a sealed vacuum cavity is disclosed. The approach uses inductive coupling from an external coil to a magnetically permeable material deposited in the vacuum cavity. The getter material is formed over this magnetically permeable material, and heated specifically thereby, leaving the rest of... Agent: Innovative Micro Technology

20120068301 - Monolithic magnetic induction device: Providing for a monolithic magnetic induction device having low DC resistance and small surface area is described herein. By way of example, the magnetic induction device can comprise a substrate (e.g., a semiconductor substrate) having trenches formed in a bottom layer of the substrate, and holes formed in the substrate... Agent: The Hong Kong University Of Science And Technology

20120068303 - Semiconductor device comprising a metal system including a separate inductor metal layer: In an integrated circuit an inductor metal layer is provided separately to the top metal layer, which includes the power and signal routing metal lines. Consequently, high performance inductors can be provided, for instance by using a moderately high metal thickness substantially without requiring significant modifications of the remaining metallization... Agent:

20120068305 - Lateral capacitor and method of making: An active device region is formed in and on a semiconductor substrate. An interconnect layer is formed over the active device region, wherein the interconnect layer comprises a first dielectric material having a first dielectric constant, a first metal interconnect in the first dielectric material, and a second metal interconnect... Agent:

20120068307 - Semiconductor device and a method of manufacturing the same: In connection with a semiconductor device including a capacitor element there is provided a technique capable of improving the reliability of the capacitor element. A capacitor element is formed in an element isolation region formed over a semiconductor substrate. The capacitor element includes a lower electrode and an upper electrode... Agent: Renesas Electronics Corporation

20120068306 - Semiconductor package including decoupling semiconductor capacitor: A semiconductor package includes a packaging substrate including a first bond finger and a second bond finger, a first semiconductor chip mounted on the packaging substrate, and including a first chip pad and a second chip pad, the first bond finger being electrically connected to the first chip pad by... Agent:

20120068304 - Semiconductor structure and method for making same: One or more embodiments relate to a method of forming a semiconductor structure, comprising: providing a semiconductor substrate; forming an opening within the substrate; forming a conductive layer within the opening; and forming a semiconductor layer over the conductive layer.... Agent:

20120068308 - Semiconductor device and semiconductor device production method: A semiconductor device includes a semiconductor substrate, a heat generating device, and a heat radiating part. The heat generating device is provided on the semiconductor substrate, and the heat radiating part is provided above the heat generating device. The heat radiating part is thermally coupled with the semiconductor substrate through... Agent: Fujitsu Limited

20120068309 - Transistor and method of manufacturing a transistor: In accordance with an embodiment of the present invention a transistor is disclosed. The transistor comprises a collector, a base and an emitter, wherein a first end width of the base is larger than a middle width of the base, wherein a first end width of the collector is larger... Agent:

20120068310 - Semiconductor device: A carrier is prevented from being stored in a guard ring region in a semiconductor device. The semiconductor device has an IGBT cell including a base region and an emitter region formed in an n− type drift layer, and a p type collector layer arranged under the drift layer with... Agent: Mitsubishi Electric Corporation

20120068311 - Semiconductor substrate, method for manufacturing semiconductor substrate, semiconductor device, and method for manufacturing semiconductor device: A semiconductor substrate having a semiconductor device formable area, wherein a reinforcing part, which is thicker than the semiconductor device formable area and has a top part of which surface is flat, is formed on an outer circumference part of the semiconductor substrate, and an inner side surface connecting the... Agent:

20120068312 - Adhesive sheet and method for manufacturing the same, semiconductor device manufacturing method and semiconductor device: An adhesive sheet comprising a release substrate 10, a substrate film 14, and a first tacky-adhesive layer 12 placed between the release substrate 10 and the substrate film 14, wherein an annular incision D is formed on the release substrate 10 from the surface of the first tacky-adhesive layer 12... Agent:

20120068313 - Semiconductor device and method of forming conductive tsv with insulating annular ring: A semiconductor wafer has an insulating layer formed over an active surface of the wafer. A conductive layer is formed over the insulating layer. A first via is formed from a back surface of the semiconductor wafer through the semiconductor wafer and insulating layer to the conductive layer. A conductive... Agent: Stats Chippac, Ltd.

20120068314 - Crosslinkable dielectrics and methods of preparation and use thereof: The present invention relates to an electronic device comprising at least one dielectric layer, said dielectric layer comprising a crosslinked organic compound based on at least one compound which is radically crosslinkable and a method of making the electronic device.... Agent: Basf Se

20120068315 - Method of improving mechanical properties of semiconductor interconnects with nanoparticles: In a BEOL process, UV radiation is used in a curing process of ultra low-k (ULK) dielectrics. This radiation penetrates through the ULK material and reaches the cap film underneath it. The interaction between the UV light and the film leads to a change the properties of the cap film.... Agent: International Business Machines Corporation

20120068316 - Transition from a chip to a waveguide port: The present invention relates to a transition from a chip to a waveguide port (47, 47′, 11), the chip (1, 1′, 62) having a first main side (3, 3′, 66) and a second main side (4, 4′, 67), where the first main side (3, 3′, 66) comprises at least one... Agent: Telefonaktiebolaget L M Ericsson (publ)

20120068318 - Integrated circuit packaging system with paddle molding and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing a package paddle having a hole, a recess, and a pad, the hole over the recess; mounting an integrated circuit to the package paddle; forming a lead having a bottom surface coplanar with a bottom surface of the... Agent:

20120068319 - Integrated circuit packaging system with stack interconnect and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: forming a connection carrier having base device pads and base interconnect pads on a carrier top side of the connection carrier; connecting a base integrated circuit to the base device pads and mounted over the carrier top side; mounting... Agent:

20120068320 - Integrated power converter package with die stacking: An integrated circuit for implementing a switch-mode power converter is disclosed. The integrated circuit comprises at least a first semiconductor die having an electrically quiet surface, a second semiconductor die for controlling the operation of said first semiconductor die stacked on said first semiconductor die having said electrically quiet surface... Agent:

20120068322 - Package substrate, module and electric/electronic devices using the same: A package substrate includes: a first conductive layer having plural first terminal pattern portions connected to a semiconductor part loaded on a first principal surface through plural first external connection conductors, which is formed on the first principal surface; a second conductive layer having plural second terminal patterns connected to... Agent: Sony Corporation

20120068321 - Semiconductor device: The invention enhances resistance to a surge in a semiconductor device having a semiconductor die mounted on a lead frame. An N type embedded layer, an epitaxial layer and a P type semiconductor layer are disposed on the front surface of a P type semiconductor substrate forming an IC die.... Agent: On Semiconductor Trading, Ltd.

20120068323 - Semiconductor device package and method of making a semiconductor device package: A method of manufacturing an electronic device is provided. The method comprises providing a carrier sheet, etching the lead frame material sheet to form a recess on a first surface of the lead frame material sheet, placing an electronic chip into the recess of the carrier sheet, and thereafter, selectively... Agent: Infineon Technologies Ag

20120068317 - Tsop with impedance control: A semiconductor device of an illustrative embodiment includes a die, a lead frame including a plurality of leads having substantial portions arranged in a lead plane and electrically connected to the die. Most preferably, the package includes at least a substantial portion of one conductive element arranged in a plane... Agent: Tessera Research LLC

20120068324 - Semiconductor device: A semiconductor device includes at least two or more groups of external connection terminals to which a substrate that drives a bare chip by inputting a signal from an external apparatus to the bare chip is electrically connected, the at least two or more groups of external connection terminals being... Agent: Olympus Medical Systems Corp.

20120068325 - Substrate bonding with metal germanium silicon material: In one embodiment, a semiconductor structure including a first substrate, a semiconductor device on the first substrate, a second substrate, and a conductive bond between the first substrate and the second substrate that surrounds the semiconductor device to seal the semiconductor device between the first substrate and the second substrate.... Agent: Freescale Semiconductor, Inc.

20120068326 - Anti-tamper microchip package based on thermal nanofluids or fluids: A tamper-resistant microchip package contains fluid- or nanofluid-filled capsules, channels, or reservoirs, wherein the fluids, either alone or in combination, can destroy circuitry by etching, sintering, or thermally destructing when reverse engineering of the device is attempted. The fluids are released when the fluid-filled cavities are cut away for detailed... Agent: Endicott Interconnect Technologies, Inc.

20120068327 - Multi-function and shielded 3d interconnects: A microelectronic unit includes a semiconductor element consisting essentially of semiconductor material and having a front surface, a rear surface, a plurality of active semiconductor devices adjacent the front surface, a plurality of conductive pads exposed at the front surface, and an opening extending through the semiconductor element. At least... Agent: Tessera Research LLC

20120068328 - Integrated circuit packaging system with active surface heat removal and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing an interconnect structure having a structure bottom side, a structure top side, and a cavity, the structure bottom side electrically connected to the structure top side; mounting an integrated circuit entirely within the cavity, the integrated circuit having... Agent:

20120068329 - Semiconductor device: The present invention provides a semiconductor device capable of selecting a desired circuit (step-down circuit (or step-up/step-down circuit) and step-up circuit) on the user side at low cost. A semiconductor device according to the present invention includes a diode element and a switching element (IGBT). An anode terminal of the... Agent: Mitsubishi Electric Corporation

20120068330 - Staged via formation from both sides of chip: A method of fabricating a semiconductor assembly can include providing a semiconductor element having a front surface, a rear surface, and a plurality of conductive pads, forming at least one hole extending at least through a respective one of the conductive pads by processing applied to the respective conductive pad... Agent: Tessera Research LLC

20120068331 - Microsprings partially embedded in a laminate structure and methods for producing same: At least one microspring has applied thereover a laminate structure to provide: mechanical protection during handling and wafer processing, a spring spacer layer, strengthening of the anchor between spring and substrate, provision of a gap stop during spring deflection, and moisture and contaminant protection. A fully-formed laminate structure may be... Agent: Palo Alto Research Center Incorporated

20120068332 - Integrated circuit packaging system with post and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing a stack substrate with a component side; connecting an integrated circuit component to the component side; attaching a conductive post to the component side and adjacent the integrated circuit component, the conductive post having a protruded end above... Agent:

20120068336 - Method for fabricating a neo-layer using stud bumped bare die: A method for fabricating a stackable integrated circuit layer and a device made from the method are disclosed. A stud bump is defined on the contact pad of an integrated circuit die and the stud-bumped die encapsulated in a potting material to define a potted assembly. A predetermined portion of... Agent: Irvine Sensors Corporation

20120068335 - Printed circuit board having hexagonally aligned bump pads for substrate of semiconductor package, and semiconductor package including the same: Provided are a printed circuit board (PCB) having hexagonally aligned bump pads as a substrate of a semiconductor package, and a semiconductor package including the same. The PCB includes: a PCB body; a bottom metal layer at a bottom of the PCB body; and a top metal layer at a... Agent: Samsung Electronics Co., Ltd.

20120068334 - Semiconductor device and manufacturing method thereof: Semiconductor devices of embodiments include a plurality of solder bumps electrically connected on a plurality of electrode pads disposed on a semiconductor substrate in parallel at a pitch of 40 μm or less via under bump metals. The ratio of the diameter (the top diameter) of the portion of each... Agent: Kabushiki Kaisha Toshiba

20120068337 - Semiconductor device and method of forming composite bump-on-lead interconnection: A semiconductor device has a semiconductor die mounted to a substrate with a plurality of composite interconnects formed between interconnect sites on the substrate and bump pads on the die. The interconnect sites are part of traces formed on the substrate. The interconnect site has a width between 1.0 and... Agent: Stats Chippac, Ltd.

20120068333 - Wire bond through-via structure and method: A stackable integrated circuit chip layer and module device that avoids the use of electrically conductive elements on the external surfaces of a layer containing an integrated circuit die by taking advantage of conventional wire bonding equipment to provide an electrically conductive path defined by a wire bond segment that... Agent: Irvine Sensors Corporation

20120068340 - Ball grid array semiconductor package and method of manufacturing the same: Provided is a BGA semiconductor package including: a substrate on which a semiconductor device is mounted; an adhesive for adhering the semiconductor device and the substrate to each other; a micro ball having conductivity, the micro ball being fitted into a through-hole provided in the substrate; a bonding wire for... Agent:

20120068338 - Impedance controlled packages with metal sheet or 2-layer rdl: A microelectronic assembly is disclosed that is capable of achieving a desired impedance for raised conductive elements. The microelectronic assembly may include an interconnection element, a surface conductive element, a microelectronic device, a plurality of raised conductive elements, and a bond element. The microelectronic device may overlie the dielectric element... Agent: Tessera Research LLC

20120068341 - Method for depackaging prepackaged integrated circuit die and a product from the method: A method for providing a known good integrated circuit die having enhanced planarity from a prepackaged integrated circuit die having a surface warpage such as in a ball grid array (BGA) package is provided. A partially-depackaged integrated circuit package is affixed to a substrate with a spacer element there between... Agent: Irvine Sensors Corporation

20120068339 - Vlsi package for high performance integrated circuit: A packaged integrated circuit is presented for placement on a printed circuit board (PCB) layer providing power lines and data access channels. The packaged integrated circuit includes; a package substrate having data channels and power lines; a circuit substrate having functional components, wherein (a) the power lines and the data... Agent: Mosys, Inc.

20120068342 - Electrically conductive adhesive for temporary bonding: The present disclosure relates to the field of fabricating microelectronic devices, wherein a conductive adhesive is used as a temporary microelectronic wafer bonding adhesive to prevent damage to microelectronic devices resulting from electrical charge build-up on the microelectronic devices during the formation of through-silicon vias.... Agent:

20120068343 - Semiconductor device and method for manufacturing the same: According to one embodiment, a semiconductor device includes a semiconductor substrate, an interlayer dielectric film, a contact hole, a contact plug and a nickel silicide film. The semiconductor substrate includes silicon. The interlayer dielectric film is formed on the semiconductor substrate. The contact hole is formed in the interlayer dielectric... Agent:

20120068344 - Interconnect structure with a planar interface between a selective conductive cap and a dielectric cap layer: A selective conductive cap is deposited on exposed metal surfaces of a metal line by electroless plating selective to exposed underlying dielectric surfaces of a metal interconnect structure. A dielectric material layer is deposited on the selective conductive cap and the exposed underlying dielectric layer without a preclean. The dielectric... Agent: International Business Machines Corporation

20120068345 - Layer stacks and integrated circuit arrangements: In various embodiments, a layer stack is provided. The layer stack may include a carrier; a first metal disposed over the carrier; a second metal disposed over the first metal; and a solder material disposed above the second metal or a material that provides contact to a solder that is... Agent: Infineon Technologies Ag

20120068348 - Interconnect regions: Some embodiments include interconnect regions. The regions may contain, along a cross section, a closed-shape interior region having an electrically conductive material therein, a first dielectric material configured as a liner extending entirely around a lateral periphery of the interior region, and at least two dielectric projections joining to the... Agent:

20120068347 - Method for processing semiconductor structure and device based on the same: Methods for fabricating a device and related device structures are provided herein. According to one embodiment, a method for fabricating a device includes the acts of producing a substrate; forming a structure on the substrate having a lower dielectric layer, a metal layer, an upper dielectric layer, a planarizing layer,... Agent: Toshiba America Electronic Components, Inc.

20120068350 - Semiconductor packages, electronic devices and electronic systems employing the same: A semiconductor package, an electronic device, and an electronic system employing the same are provided. The semiconductor package includes a printed circuit board (PCB) and a semiconductor chip structure. A first PCB land region is provided on a first surface of the PCB. A plurality of first chip land regions... Agent: Samsung Electronics Co., Ltd.

20120068346 - Structure for nano-scale metallization and method for fabricating same: A method for forming structure aligned with features underlying an opaque layer is provided for an interconnect structure, such as an integrated circuit. In one embodiment, the method includes forming an opaque layer over a first layer, the first layer having a surface topography that maps to at least one... Agent: International Business Machines Corporation

20120068349 - Tape package: A tape package providing a plurality of input and output portions each having a minimum pitch. The tape package includes a tape wiring substrate including first and second wirings, and a semiconductor chip mounted on the tape wiring substrate, and including a first edge, a first pad disposed adjacent to... Agent: Samsung Electronics Co., Ltd

20120068351 - Chip assembly having via interconnects joined by plating: An assembly and method of making same are provided. The assembly can be formed by juxtaposing a first electrically conductive element overlying a major surface of a first semiconductor element with an electrically conductive pad exposed at a front surface of a second semiconductor element. An opening can be formed... Agent: Tessera Research LLC

20120068356 - Component having a via: A component having a via includes: (i) a first layer having a first via portion, a first trench structure, and a first surrounding layer portion, the first via portion being separated by the first trench structure from the first surrounding layer portion; (ii) a second layer having a second via... Agent:

20120068359 - Semiconductor device and method for manufacturing semiconductor device: A semiconductor device comprises: a core substrate; at least one insulating layer and at least one wiring layer which are disposed on each of a first surface of the core substrate and a second surface opposite to the first surface; a via(s) which is disposed in each of the insulating... Agent:

20120068355 - Semiconductor device and method for manufacturing the same: A semiconductor device including two silicon wafers stacked and bonded together with bumps of one wafer electrically coupled with those of the other wafer, in which generation of voids on the junction surface between the silicon wafers is suppressed. Due to a recess made in the surface of a buried... Agent: Hitachi, Ltd.

20120068353 - Semiconductor device and method of forming dam material with openings around semiconductor die for mold underfill using dispenser and vacuum assist: A semiconductor wafer contains a plurality of semiconductor die separated by saw streets. A dam material is formed over the saw streets around each of the semiconductor die. A plurality of openings is formed in the dam material. The openings in the dam material can be formed on each side... Agent: Stats Chippac, Ltd.

20120068357 - Semiconductor device and power semiconductor device: According to one embodiment, a semiconductor device includes a base, a semiconductor element, an electrode terminal, a connecting member and a joining material. The semiconductor element is mounted on the base. The electrode terminal is provided spaced from the base. The connecting member connects the semiconductor element to the electrode... Agent: Kabushiki Kaisha Toshiba

20120068354 - Semiconductor memory device and method for manufacturing the same: According to one embodiment, a semiconductor memory device includes a multilayer body, a second electrode film provided on the multilayer body, a second insulating film provided on the second electrode film, a semiconductor film, a memory film and a gate insulating film. At boundary between the inner surface of the... Agent: Kabushiki Kaisha Toshiba

20120068358 - Semiconductor package and method for making the same: A semiconductor package includes: a semiconductor substrate; an inner insulator layer formed on the substrate; at least one internal wiring extending from a front side of the substrate along one of lateral sides of the substrate to a rear side of the substrate; a first outer insulator layer disposed at... Agent:

20120068352 - Stacked chip assembly having vertical vias: An assembly and method of making same are provided. The assembly can be formed by stacking a first semiconductor element atop a second semiconductor element and forming an electrically conductive element extending through openings of the semiconductor elements. The openings may be staged. The conductive element can conform to contours... Agent: Tessera Research LLC

20120068360 - Stacked semiconductor device assembly: The semiconductor device system includes multiple stacked substantially identical semiconductor devices each including a first side and an opposing second side. First and second pads are disposed at the first side of the semiconductor device, while third and fourth pads are disposed at the second side of the semiconductor device.... Agent:

20120068361 - Stacked multi-die packages with impedance control: A microelectronic assembly may include microelectronic devices arranged in a stack and having device contacts exposed at respective front surfaces. Signal conductors having substantial portions extending above the front surface of the respective microelectronic devices connect the device contacts with signal contacts of an underlying interconnection element. A rear surface... Agent: Tessera Research LLC

20120068362 - Semiconductor device having semiconductor member and mounting member: A semiconductor device including: a semiconductor member having thereon a plurality of interconnect pads: and a mounting member having a plurality of electrode terminals electrically and mechanically connected to the respective interconnect pads for mounting the semiconductor chip on the mounting member, the electrode terminals forming a plurality of I/O... Agent: Renesas Electronics Corporation

20120068364 - Device and method for manufacturing a device: A device includes a semiconductor material having a first surface. A first material is applied to the first surface and a fiber material is embedded in the first material.... Agent:

20120068363 - Integrated circuit packaging system with die paddles and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: forming a package paddle group having a first package paddle electrically isolated from a second package paddle; attaching an integrated circuit device on the first package paddle and the second package paddle; forming a standoff terminal adjacent the package... Agent:

20120068365 - Metal can impedance control structure: A microelectronic assembly includes an interconnection element, element contacts, first and second metal layers, conductive elements, and first and second microelectronic devices. The first metal layer may extend beyond at least one of the edges of the first microelectronic device. The conductive elements may respectively extend beyond at least one... Agent: Tessera Research LLC

20120068366 - Selective etch chemistries for forming high aspect ratio features and associated structures: An interlevel dielectric layer, such as a silicon oxide layer, is selectively etched using a plasma etch chemistry including a silicon species and a halide species and also preferably a carbon species and an oxygen species. The silicon species can be generated from a silicon compound, such as SixMyHz, where... Agent: Micron Technology, Inc.

20120061637 - 3-d structured nonvolatile memory array and method for fabricating the same: The present invention relates to a field of nonvolatile memory technology in ULSI circuits manufacturing technology and discloses a 3D-structured resistive-switching memory array and a method for fabricating the same. The 3D-structured resistive-switching memory array according to the invention includes a substrate and a stack structure of bottom electrodes/isolation dielectric... Agent:

20120061638 - Memory element and memory device: There are provided a memory element and a memory device in which the state of erasing remains stable by deactivation of a localized site(s) formed inside of a resistance change layer. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory... Agent: Sony Corporation

20120061639 - Resistance change memory: According to one embodiment, a resistance change memory includes a memory cell unit. The memory cell unit is configured to stack a resistance change element and a diode element having non-ohmic properties, and the diode element is configured to stack in order to a semiconductor layer having a first conductivity... Agent:

20120061644 - Blue light emitting semiconductor nanocrystal materials: A semiconductor nanocrystal includes a core including a first semiconductor material and an overcoating including a second semiconductor material. A monodisperse population of the nanocrystals emits blue light over a narrow range of wavelengths with a high quantum efficiency.... Agent:

20120061643 - Gan-based semiconductor light emitting device and the method for making the same: A GaN-based semiconductor light emitting device 11a includes a substrate 13 composed of a GaN-based semiconductor having a primary surface 13a tilting from the c-plane toward the m-axis at a tilt angle α of more than or equal to 63 degrees and less than 80 degrees, a GaN-based semiconductor epitaxial... Agent: Sumitomo Electric Industries, Ltd.

20120061641 - Group iii nitride nanorod light emitting device and method of manufacturing thereof: There are disclosed a group III nitride nanorod light emitting device and a method of manufacturing thereof. The group III nitride nanorod light emitting device includes a substrate, an insulating film formed on the substrate, and including a plurality of openings exposing parts of the substrate and having different diameters,... Agent:

20120061646 - Light emission device and manufacturing method thereof: The present invention provides a light emission device and a manufacturing method thereof. The light emission device includes: i) a substrate; ii) a mask layer disposed on the substrate and having at least one opening; iii) a light emission structure formed on the mask layer surrounding the opening and extended... Agent: Sun R&db Foundation

20120061645 - Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys: A high-power and high-efficiency light emitting device with emission wavelength (λpeak) ranging from 280 nm to 360 nm is fabricated. The new device structure uses non-polar or semi-polar AlInN and AlInGaN alloys grown on a non-polar or semi-polar bulk GaN substrate.... Agent: The Regents Of The University Of California

20120061640 - Semiconductor light emitting device: A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a first electrode layer, a second semiconductor layer of a second conductivity type, a light emitting layer and a second electrode layer. The first electrode layer includes a metal portion having a plurality of opening... Agent: Kabushiki Kaisha Toshiba

20120061642 - Semiconductor light emitting device and manufacturing method thereof: A semiconductor light emitting device which includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer provided between the n-type semiconductor layer and the p-type semiconductor layer. The semiconductor light emitting device comprises a first transparent electrode made of metal oxide transparent conductor provided on a surface... Agent: Stanley Electric Co., Ltd.

20120061647 - Infrared light detector: Provided is an infrared light detector 100 wherein a light coupling mechanism 110 is configured by a metal thin film or metal thin plate in which a plurality of windows apart from each other are formed. Each of the windows is formed by multangular shapes in which a part of... Agent: Japan Science And Technology Agency

20120061648 - Apparatus, method and computer program product providing radial addressing of nanowires: Disclosed is a method to construct a device that includes a plurality of nanowires (NWs) each having a core and at least one shell. The method includes providing a plurality of radially encoded NWs where each shell contains one of a plurality of different shell materials; and differentiating individual ones... Agent: Brown University Research Foundation

20120061649 - Strain-inducing semiconductor regions: A method to form a strain-inducing semiconductor region is described. In one embodiment, formation of a strain-inducing semiconductor region laterally adjacent to a crystalline substrate results in a uniaxial strain imparted to the crystalline substrate, providing a strained crystalline substrate. In another embodiment, a semiconductor region with a crystalline lattice... Agent:

20120061657 - Binaphthyl compound and organic light emitting element using the same: The present invention provides a novel binaphthyl compound and an organic light emitting element having a good light emitting efficiency and a high durability at a low driving voltage. An organic light emitting element including an anode and a cathode, and a layer including an organic compound sandwiched between the... Agent: Canon Kabushiki Kaisha

20120061651 - Heterocyclic compound, light-emitting element, light-emitting device, electronic device, and lighting device: A substance having a hole-transport, property and a wide band gap is provided. A heterocyclic compound represented by a general formula (G1) is provided. In the formula, α1 and α2 separately represent a substituted or unsubstituted arylene group having 6 to 13 carbon atoms; n and k separately represent 0... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120061655 - Light emitting element, light emitting device, and electronic device: One feature of the present invention is to provide a buffer layer made of a composite material for a light emitting element including aromatic hydrocarbon containing at least one vinyl skeleton and metal oxide in part of a light emitting substance containing layer, in the light emitting element formed by... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120061653 - Light-emitting element and display device: When a light-emitting element having an intermediate conductive layer between a plurality of light-emitting layers is formed, the intermediate conductive layer can have transparency; and thus, materials are largely limited and the manufacturing process of an element becomes complicated by a conventional method. A light-emitting element according to the present... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120061654 - Metal complex comprising novel ligand structures: Compounds comprising a metal complex having novel ligands are provided. In particular, the compound is an iridium complex comprising novel aza DBX ligands. The compounds may be used in organic light emitting devices, particularly as emitting dopants, providing improved efficiency, low operating voltage, and long lifetime.... Agent: Universal Display Corporation

20120061656 - Organic el element: An organic light-emitting element includes an anode, a functional layer, and a hole injection layer between the anode and the functional layer. The functional layer contains an organic material. The hole injection layer injects holes to the functional layer. The hole injection layer comprises tungsten oxide and includes an occupied... Agent: Panasonic Corporation

20120061659 - Organic photoelectric conversion element: A high photoelectric conversion efficiency is provided by an organic photoelectric conversion element comprising a first electrode, a second electrode and an active layer, wherein the active layer is located between the first electrode and the second electrode and contains an electron-donating compound and an electron-accepting compound, and the active... Agent: Sumitomo Chemical Company, Limited

20120061652 - Semiconductor device and light-emitting device, and manufactuirng method thereof: In a semiconductor device including an organic layer containing a light-emitting substance between a first electrode connected to a source or drain electrode layer of an enhancement-type transistor that has a channel formation region using an oxide semiconductor and a second electrode overlapped with the first electrode, an active, electrically... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120061658 - Structural templating for organic electronic devices having an organic film with long range order: An organic photosensitive device having an organic film with a desired crystalline order includes a first electrode layer and at least one structural templating layer disposed on the first electrode A photoactive region is disposed on the templating layer and includes a donor material and an acceptor material, wherein the... Agent: The Regents Of The University Of Michigan

20120061650 - Transistor structure: A transistor structure comprises a patterned N-type transparent oxide semiconductor formed over a substrate as a base, and a patterned p-type organic polymer semiconductor formed on the patterned N-type transparent oxide semiconductor comprising a first portion and a second portion so that the patterned N-type transparent oxide semiconductor and the... Agent: E Ink Holdings Inc.

20120061664 - Light-emitting display device and method for manufacturing the same: Provided is a method to manufacture a light-emitting display device in which a contact hole for the electrical connection of the pixel electrode and one of the source and drain electrode of a transistor and a contact hole for the processing of a semiconductor layer are formed simultaneously. The method... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120061667 - Light-emitting element: A light-emitting element includes: a substrate including a first surface and a second surface different from the first surface; a plurality of light-emitting structure units disposed on the second surface; and a trench formed on the first surface and between the plurality of light-emitting structure units.... Agent:

20120061665 - Liquid crystal display device and manufacturing method thereof: A photolithography step and an etching step for forming an island-shaped semiconductor layer is omitted, and a liquid crystal display device is manufactured through the following four photolithography steps: a step for forming a gate electrode (including a wiring or the like formed from the same layer), a step for... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120061666 - Semiconductor device and display device: A semiconductor device including a first gate electrode and a second gate electrode formed apart from each other over an insulating surface, an oxide semiconductor film including a region overlapping with the first gate electrode with a gate insulating film interposed therebetween, a region overlapping with the second gate electrode... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120061663 - Semiconductor device and method for manufacturing the same: An object is to provide a semiconductor device including an oxide semiconductor film, which has stable electrical characteristics and high reliability. A stack of first and second material films is formed by forming the first material film (a film having a hexagonal crystal structure) having a thickness of 1 nm... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120061668 - Semiconductor device and method for manufacturing the same: As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, a problem of higher manufacturing cost, because it is difficult to mount an IC chip including a driver... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120061662 - Semiconductor device, power diode, and rectifier: An object is to provide a semiconductor device having electrical characteristics such as high withstand voltage, low reverse saturation current, and high on-state current. In particular, an object is to provide a power diode and a rectifier which include non-linear elements. An embodiment of the present invention is a semiconductor... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120061661 - Semiconductor structure and fabricating method thereof: A semiconductor structure and a fabricating method thereof are provided. The fabricating method includes forming a gate, a source, and a drain on a substrate and forming an oxide semiconductor material between the gate and the source and drain. The oxide semiconductor material is formed by performing a deposition process,... Agent: Au Optronics Corporation

20120061660 - Zno nanostructure-based light emitting device: A Light Emitting Diode (LED) formed on a substrate of a material selected from at least one of a semiconductor, an insulator and a metal; at least one semiconductor film layer of ZnO or GaN deposited on the substrate; a nanotips array of ZnO or its ternary compound, the array... Agent: Rutgers, The State University Of New Jersey

20120061669 - Chip on film (cof) package having test line for testing electrical function of chip and method for manufacturing same: A chip on film (COF) package and a method for manufacturing same are provided. The COF package comprises a base film, a semiconductor chip mounted on the base film, a signal-inputting portion mounted on the base film, a first passive element mounted on the base film and comprising first and... Agent: Samsung Electronics Co., Ltd.

20120061670 - Method for manufacturing semiconductor device: Described is a method for manufacturing a semiconductor device. A mask is formed over an insulating film and the mask is reduced in size. An insulating film having a projection is formed using the mask reduced in size, and a transistor whose channel length is reduced is formed using the... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120061672 - Method of providing a flexible semiconductor device at high temperatures and flexible semiconductor device thereof: Some embodiments include a method of providing a semiconductor device. The method can include: (a) providing a flexible substrate; (b) depositing at least one layer of material over the flexible substrate, wherein the deposition of the at least one layer of material over the flexible substrate occurs at a temperature... Agent: Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Acting For And On Behalf Of

20120061671 - Semiconductor device and light-emitting device: To provide a highly reliable semiconductor device including an oxide semiconductor. Further to provide a highly reliable light-emitting device including an oxide semiconductor. A second electrode sealed together with a semiconductor element including an oxide semiconductor hardly becomes inactive. A hydrogen ion and/or a hydrogen molecule produced by reaction of... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120061674 - Electric device: There is provided an electric device which can prevent a deterioration in a frequency characteristic due to a large electric power external switch connected to an opposite electrode and can prevent a decrease in the number of gradations. The electric device includes a plurality of source signal lines, a plurality... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120061673 - Method for manufacturing light-emitting display device: It is an object of one embodiment of the present invention to manufacture a light-emitting display device by simplifying a manufacturing process of a transistor, without an increase in the number of steps as well as the number of photomasks as compared to those in the conventional case. A step... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120061675 - Transistor structure, manufacturing method of transistor structure, and light emitting apparatus: Disclosed is a transistor structure including: a first thin film transistor including, a first gate electrode; a first insulating film; a first semiconductor film; and a first light blocking film, and a second thin film transistor including, a second semiconductor film; the second insulating film; a second gate electrode; and... Agent: Casio Computer Co., Ltd.

20120061676 - Thin film transistor: A highly reliable transistor in which change in electrical characteristics is suppressed is provided. A highly reliable transistor in which change in electrical characteristics is suppressed is manufactured with high productivity. A display device with less image deterioration over time is provided. An inverted staggered thin film transistor which includes,... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120061678 - Method of laser annealing semiconductor layer and semiconductor devices produced thereby: A laser annealing method includes forming a nitrogen-doped layer on a semiconductor layer, the nitrogen-doped layer having a nitrogen concentration of at least 3×1020 atoms/cc, irradiating a first area of the nitrogen-doped layer in a low oxygen environment with a laser beam and irradiating a second area of the nitrogen-doped... Agent:

20120061677 - Semiconductor device: To provide a semiconductor device including a transistor formed using a highly reliable oxide semiconductor. To provide a semiconductor device which can be manufactured with high productivity and high yield by reducing the number of photolithography steps. The semiconductor device includes a first wiring, a second wiring, and a third... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120061679 - Silicon polymers, methods of polymerizing silicon compounds, and methods of forming thin films from such silicon polymers: Compositions and methods for controlled polymerization and/or oligomerization of hydrosilanes compounds including those of the general formulae SinH2n and SinH2n+2 as well as alkyl- and arylsilanes, to produce soluble silicon polymers as a precursor to silicon films having low carbon content.... Agent:

20120061680 - Gallium nitride based semiconductor devices and methods of manufacturing the same: Gallium nitride (GaN) based semiconductor devices and methods of manufacturing the same. The GaN-based semiconductor device may include a heat dissipation substrate (that is, a thermal conductive substrate); a GaN-based multi-layer arranged on the heat dissipation substrate and having N-face polarity; and a heterostructure field effect transistor (HFET) or a... Agent:

20120061683 - Group iii nitride semiconductor growth substrate, group iii nitride semiconductor epitaxial substrate, group iii nitride semiconductor element and group iii nitride semiconductor free-standing substrate, and method of producing the same: An object of the present invention is to provide a Group III nitride semiconductor epitaxial substrate, a Group III nitride semiconductor element, and a Group III nitride semiconductor free-standing substrate, which have good crystallinity, with not only AlGaN, GaN, and GaInN the growth temperature of which is 1050° C. or... Agent: Dowa Holdings Co., Ltd.

20120061681 - Mechanism of forming sic crystalline on si substrates to allow integration of gan and si electronics: The mechanisms of forming SiC crystalline regions on Si substrate described above enable formation and integration of GaN-based devices and Si-based devices on a same substrate. The SiC crystalline regions are formed by implanting carbon into regions of Si substrate and then annealing the substrate. An implant-stop layer is used... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120061685 - Memory devices and memory cells: A memory device includes an array of memory cells and peripheral devices. At least some of the individual memory cells include carbonated portions that contain SiC. At least some of the peripheral devices do not include any carbonated portions. A transistor includes a first source/drain, a second source/drain, a channel... Agent: Micron Technology, Inc.

20120061688 - Power semiconductor device and method for manufacturing the power semiconductor device: In a power semiconductor device that switches at a high speed, a displacement current flows at a time of switching, so that a high voltage occurs which may cause breakdown of a thin insulating film such as a gate insulating film. A semiconductor device includes: a semiconductor substrate of a... Agent: Mitsubishi Electric Corporation

20120061682 - Sic semiconductor device and method for manufacturing the same: A SiC semiconductor device includes: a substrate, a drift layer, and a base region stacked in this order; first and second source regions and a contact layer in the base region; a trench penetrating the source and base regions; a gate electrode in the trench; an interlayer insulation film with... Agent: Denso Corporation

20120061687 - Silicon carbide substrate and semiconductor device: A silicon carbide substrate, which allows for reduced resistivity in the thickness direction thereof while restraining stacking faults from being produced due to heat treatment, includes: a base layer made of silicon carbide; and a SiC layer made of single-crystal silicon carbide and disposed on one main surface of the... Agent: Sumitomo Electric Industries, Ltd.

20120061686 - Silicon carbide substrate, semiconductor device, and method of manufacturing silicon carbide substrate: A silicon carbide substrate allowing reduction in cost for manufacturing a semiconductor device including a silicon carbide substrate includes a base substrate composed of silicon carbide and an SiC layer composed of single crystal silicon carbide different from the base substrate and arranged on the base substrate in contact therewith.... Agent: Sumitomo Electric Industries, Ltd.

20120061684 - Transistor devices and methods of making: In an embodiment, a method of fabricating a transistor device comprises: providing a semiconductor topography comprising a gate conductor disposed above a semiconductor substrate between a pair of dielectric spacers; anisotropically etching exposed regions of the semiconductor substrate on opposite sides of the dielectric spacers to form recessed regions in... Agent: International Business Machines Corporation

20120061689 - Light-emitting device and method manufacturing the same: A light-emitting device and a method for manufacturing the same are provided. The light-emitting device comprises a substrate, a light-emitting element and a light-electricity-transforming element. The substrate has a first region and a second region which are non-overlapping. The light-emitting element is disposed over the substrate and located in the... Agent:

20120061699 - Electric lamp: An electric lamp (1) comprising a socket (2), a lamp bulb (4) mounted on the socket, in which bulb at least one semiconductor light source (5) is arranged. Cooling means (6) comprise at least two facing cooling fms (7,8) which are separated by at least one spacing (9). Said spacing... Agent: Koninklijke Philips Electronics N.v.

20120061690 - Led module and packing method of the same: A LED module and a packing method of the same include plural boards defined with a positive line and a negative line. The positive line connects to at least one positive joint, and the negative line connects to at least one negative joint. Some LEDs are respectively disposed on each... Agent:

20120061692 - Light emitting diode package having interconnection structures: A light emitting diode (LED) package includes a substrate, a first LED chip and a second LED chip. The substrate includes first to fourth electrodes, and an interconnection electrode. A mounting area is defined at center of a top surface of the substrate. The first to fourth electrodes are respectively... Agent: Advanced Optoelectronic Technology, Inc.

20120061691 - Light-emitting device: This disclosure discloses a light-emitting device. The light-emitting device comprises: a light-emitting array comprising a first light-emitting unit and a second light-emitting unit electrically connected in serial with the first light-emitting unit; at least two first bonding pads formed on the first light-emitting unit; and at least two second bonding... Agent:

20120061695 - Light-emitting diode package: A light emitting diode (LED) package is provided. The LED package includes: a package body including an LED; a bottom heat transfer metal layer formed on the bottom of the package body; and a metal plate bonded to the bottom heat transfer metal layer, wherein the bottom heat transfer metal... Agent:

20120061694 - Light-emitting structure: An embodiment of the present application discloses a light-emitting structure, comprising a first unit; a second unit; a trench formed between the first unit and the second unit, and having a less steep sidewall and a steeper sidewall steeper than the less steep sidewall; and an electrical connection arranged on... Agent: Epistar Corporation

20120061696 - Method for manufacturing display and display: A method for manufacturing a display, the method including the steps of: disposing a substrate over which a plurality of lower electrodes and a plurality of auxiliary electrodes are formed and a donor film over which a light-emitting functional layer is formed so that the light-emitting functional layer contacts with... Agent: Sony Corporation

20120061698 - Method for treating metal surfaces: A method for treating a metal surface to reduce corrosion thereon and/or to increase the reflectance of the treated surface, the method comprising a) plating a metal surface with an electroless nickel plating solution; and thereafter b) immersion plating silver on the electroless nickel plated surface, whereby corrosion of the... Agent:

20120061693 - Optoelectronic component with flip-chip mounted optoelectronic device: Provided are optoelectronic components which include an optoelectronic device and a structure for self-aligning the optoelectronic device. Also provided are optoelectronic modules and methods of forming optoelectronic components.... Agent: Samsung Electronics Co., Ltd.

20120061697 - Organic light-emitting element, organic light-emitting transistor, and light-emitting display device: An organic light-emitting element comprises a large number of unit pixels each at least composed of a base, an auxiliary electrode, a first insulating layer to cover at least the auxiliary electrode, a charge injection layer on the first insulating electrode, laminated bodies each consisting of a first electrode and... Agent: Dai Nippon Printing Co., Ltd.

20120061709 - Led module with improved light output: An LED module includes a printed circuit board (PCB) or a surface mounted device (SMD) carrier, an LED chip mounted directly or indirectly on the PCB or SMD carrier, an optical element arranged on top of the LED chip, and a white reflective layer covering a surface of the PCB... Agent: Tridonic Jennersdorf Gmbh

20120061704 - Light emitting device and lighting instrument including the same: Disclosed is a light emitting device including, a second electrode layer, a light emitting structure that includes a second conductive semiconductor layer, an active layer and a first conductive semiconductor layer and that is provided on the second electrode layer, a first electrode layer that includes a pad part and... Agent: Lg Innotek Co., Ltd.

20120061703 - Light emitting device and manufacturing method of light emitting device: A light emitting device may include a base provided with a recess portion in a side surface thereof, a light emitting element mounted on a main surface of the base, a first resin body filled in an inside of the recess portion, and covering at least the main surface and... Agent: Kabushiki Kaisha Toshiba

20120061708 - Light-emitting device and lighting device: Provided is a light-emitting device having a structure in which a high refractive index component is provided between a solid light-emitting element and air, has an uneven structure on a surface in contact with air, and can be reused. The light-emitting device includes a substrate having a refractive index of... Agent: Semiconductor Energy Laboratory Co., Ltd

20120061700 - Method and system for providing a reliable light emitting diode semiconductor device: A method and a system for a reliable LED semiconductor device are provided. In one embodiment, the device comprises a carrier, a light emitting diode disposed on the carrier, an encapsulating material disposed over the light emitting diode and the carrier, at least one through connection formed in the encapsulating... Agent:

20120061705 - Method for treating metal surfaces: A method for treating a metal surface to reduce corrosion thereon and/or to increase the reflectance of the treated surface, the method comprising a) plating a metal surface with an electroless nickel plating solution; and thereafter b) immersion plating silver on the electroless nickel plated surface, whereby corrosion of the... Agent: Macdermid Acumen, Inc.

20120061701 - Organic light emitting device: An organic light emitting device includes an organic light emitting panel and at least one light extraction enhanced film. The organic light emitting panel has at least one light emitting surface. The light extraction enhanced film is disposed on the light emitting surface of the organic light emitting panel, and... Agent: Au Optronics Corporation

20120061707 - Solid-state light-emitting element, light-emitting device, and lighting device: A solid-state light-emitting element includes a structure body having a property of transmitting visible light and an uneven structure on each of the top side and the bottom side thereof; a high refractive index material layer provided on one surface of the structure body; and a light-emitting body with a... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120061702 - Submounts for semiconductor light emitting devices and methods of forming packaged light emitting devices including dispensed encapsulants: A submount for mounting an LED chip includes a substrate, a die attach pad configured to receive an LED chip on an upper surface of the substrate, a first meniscus control feature on the substrate surrounding the die attach pad and defining a first encapsulant region of the upper surface... Agent:

20120061706 - Supporting member and light emitting device using the supporting member: A light emitting device includes a support member having a mounting surface. The support member includes an insulating member having top surface and a plurality of side surfaces, a first metal pattern disposed on the top surface of the insulating member, and a second metal pattern disposed on the side... Agent: Nichia Corporation

20120061714 - Fluorene compound, light-emitting element, light-emitting device, electronic device, lighting device, and organic compound: A substance having a hole-transport property and a wide band gap is provided. A fluorene compound represented by a general formula (G1) is provided. In the general formula (G1), α1 and α2 separately represent a substituted or unsubstituted arylene group having 6 to 13 carbon atoms; Ar1 represents a substituted... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120061717 - Heat conducting slug having multi-step structure and the light emitting diode package using the same: The present invention relates to a light-emitting diode package having a plurality of inner leads, a plurality of outer leads extending from the inner leads, a slug electrically connected to at least one of the inner leads, the slug having a thermally conductive material, a light-emitting chip arranged on the... Agent: Seoul Semiconductor Co., Ltd.

20120061711 - Light emitting diode with independent electrode patterns: A light emitting diode includes a substrate, an N-doped layer disposed on the substrate, a plurality of cathodes disposed between the N-doped layer and the substrate, an active layer disposed on the N-doped layer, a P-doped layer disposed on the active layer, and a plurality of anodes disposed on the... Agent:

20120061716 - Manufacturing method for power led head-dissipating substrate and power led product and the products thereof: The present invention provides manufacturing methods for a power LED substrate with a mounting hole and a heat sink and for its power LED product and products thereof. The disclosed fabrication methods for power LED heat-dissipating substrate include the following steps a) selecting substrate material and processing; b) fabricating heat... Agent: Nationstar Optoelectronics Co., Ltd.

20120061710 - Method for treating metal surfaces: A method for treating a metal surface to reduce corrosion thereon and/or to increase the reflectance of the treated surface, the method comprising a) plating a metal surface with an electroless nickel plating solution; and thereafter b) immersion plating silver on the electroless nickel plated surface, whereby corrosion of the... Agent:

20120061713 - Semiconductor light emitting device: According to one embodiment, a semiconductor light emitting device includes: a stacked structure body, first and second electrodes, and a pad layer. The body includes first semiconductor layer of a first conductivity type, a light emitting layer, and a second semiconductor layer of second conductivity type. The first semiconductor layer... Agent: Kabushiki Kaisha Toshiba

20120061712 - Semiconductor light emitting device and method for manufacturing the same: A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a first electrode layer, a light emitting layer, a second semiconductor layer, a third semiconductor layer and a second electrode layer. The first electrode layer includes a metal portion having a plurality of opening portions.... Agent: Kabushiki Kaisha Toshiba

20120061715 - Semiconductor light-emitting device manufacturing method and semiconductor light-emitting device: There is provided a semiconductor light-emitting device manufacturing method which includes the steps of forming a semiconductor growth film on a growth substrate; forming a metal film on the semiconductor growth film; forming a multilayer insulating film on the metal film, the multilayer insulating film having at least a first... Agent: Stanley Electric Co., Ltd.

20120061718 - Electronic device: There is provided an electronic device having high reliability and high color reproducibility. A pixel structure is made such that a switching FET (201) and an electric current controlling FET (202) are formed on a single crystal semiconductor substrate (11), and an EL element (203) is electrically connected to the... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120061719 - Shockley diode having a low turn-on voltage: A Shockley diode including: a vertical stack of first to fourth layers of alternated conductivity types between first and second electrodes; a recess formed in the fourth layer and extending vertically to penetrate into the second layer; a first region of same conductivity type as the second layer but of... Agent: Stmicroelectronics (tours) Sas

20120061722 - Control device of semiconductor device: A control device of a semiconductor device is provided. The control device of a semiconductor device is capable of reducing both ON resistance and feedback capacitance in a hollow-gate type planar MOSFET to which a second gate electrode is provided or a trench MOSFET to which a second gate electrode... Agent: Renesas Electronics Corporation

20120061721 - Power semiconductor device and method of manufacturing the same: A power semiconductor device includes a first semiconductor layer of a first conductivity type, a first drift layer, and a second drift layer. The first drift layer includes a first epitaxial layer of the first conductivity type, a plurality of first first-conductivity-type pillar layers, and a plurality of first second-conductivity-type... Agent: Kabushiki Kaisha Toshiba

20120061720 - Vts insulated gate bipolar transistor: In one embodiment, a power transistor device comprises a substrate that forms a PN junction with an overlying buffer layer. The power transistor device further includes a first region, a drift region that adjoins a top surface of the buffer layer, and a body region. The body region separates the... Agent: Power Integrations, Inc.

20120061725 - Power semiconductor package: A semiconductor package that includes a conductive can, a power semiconductor device electrically and mechanically attached to the inside surface of the can, and an IC semiconductor device copackaged with the power semiconductor device inside the can.... Agent: International Rectifier Corporation

20120061723 - Semiconductor device: According to one embodiment, a semiconductor device includes a first conductivity type base layer, a second conductivity type base layer, a gate insulating film, a first conductivity type source layer, a gate electrode, and a main electrode. The gate electrode is provided inside of the gate insulating film in the... Agent: Kabushiki Kaisha Toshiba

20120061724 - Semiconductor device: According to one embodiment, a semiconductor device includes a first major electrode, a first semiconductor layer, a first conductivity-type base layer, a second conductivity-type base layer, a second semiconductor layer, a buried layer, a buried electrode, a gate insulating film, a gate electrode, and a second major electrode. The buried... Agent: Kabushiki Kaisha Toshiba

20120061726 - Lateral insulated-gate bipolar transistor: A N-channel lateral insulated-gate bipolar transistor includes a semiconductor substrate, a drift layer, a collector region, a channel layer, an emitter region, a gate insulation film, a gate electrode, a collector electrode, an emitter electrode. The collector region includes a high impurity concentration region having a high impurity concentration and... Agent: Denso Corporation

20120061727 - Gallium nitride based semiconductor devices and methods of manufacturing the same: Gallium nitride (GaN) based semiconductor devices and methods of manufacturing the same. The GaN-based semiconductor device may include a heterostructure field effect transistor (HFET) or a Schottky diode, arranged on a heat dissipation substrate. The HFET device may include a GaN-based multi-layer having a recess region; a gate arranged in... Agent:

20120061728 - Semiconductor on insulator (xoi) for high performance field effect transistors: Semiconductor-on-insulator (XOI) structures and methods of fabricating XOI structures are provided. Single-crystalline semiconductor is grown on a source substrate, patterned, and transferred onto a target substrate, such as a Si/SiO2 substrate, thereby assembling an XOI substrate. The transfer process can be conducted through a stamping method or a bonding method.... Agent: The Regents Of The University Of California

20120061729 - Nitride semiconductor device and method for fabricating the same: A nitride semiconductor device includes a semiconductor layer stack including a first nitride semiconductor layer and a second nitride semiconductor layer stacked in this order on a substrate. A p-type third nitride semiconductor layer is selectively formed on the semiconductor layer stack, and a gate electrode is formed on the... Agent: Panasonic Corporation

20120061730 - Semiconductor wafer, electronic device, a method of producing semiconductor wafer, and method of producing electronic device: There is provided a semiconductor wafer including a base wafer that has an impurity region in which an impurity atom has been introduced into silicon, a plurality of seed bodies provided in contact with the impurity region, and a plurality of compound semiconductors each provided in contact with the corresponding... Agent: Sumitomo Chemical Company, Limited

20120061731 - Nonvolatile programmable logic switches and semiconductor integrated circuit: A nonvolatile programmable logic switch according to an embodiment includes: a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type; a memory cell transistor including a first insulating film formed on the first semiconductor region, a charge storage film formed on... Agent:

20120061732 - Information recording/reproducing device: According to one embodiment, an information recording/reproducing device including a semiconductor substrate, a first interconnect layer on the semiconductor substrate, a first memory cell array layer on the first interconnect layer, and a second interconnect layer on the first memory cell array layer. The first memory cell array layer comprises... Agent:

20120061733 - Methods and apparatus for detecting molecular interactions using fet arrays: Methods and apparatuses relating to large scale FET arrays for analyte detection and measurement are provided. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small... Agent: Life Technologies Corporation

20120061734 - Micro-electromechanical system devices: Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a semiconductive layer disposed over a substrate. A trench is disposed in the semiconductive layer, the trench with a first sidewall and an opposite second sidewall. A first insulating material layer is... Agent: Infineon Technologies Ag

20120061735 - Semiconductor device with stress trench isolation and method for forming the same: A semiconductor device with stress trench isolation and a method for forming the same are provided. The method includes: providing a silicon substrate; forming first trenches and second trenches on the silicon substrate, wherein an extension direction of the first trenches is perpendicular to that of the second trenches; forming... Agent: Institute Of Microelectronics, Chinese Academy Of Sciences

20120061738 - Gate stack structure, semiconductor device and method for manufacturing the same: A gate stack structure comprises an isolation dielectric layer formed on and embedded into a gate. A sidewall spacer covers opposite side faces of the isolation dielectric layer, and the isolation dielectric layer located on an active region is thicker than the isolation dielectric layer located on a connection region.... Agent: Institute Of Microelectronics, Chinese Academy Of Sciences

20120061737 - Semiconductor device, method of fabricating the same, and patterning mask utilizied by the method: A semiconductor device. The device comprises an active region isolated by an isolation structure on a substrate. The device further comprises a gate electrode extending across the active area and overlying the substrate, a pair of source region and drain region, disposed on either side of the gate electrode on... Agent:

20120061736 - Transistor and method for forming the same: The present invention relates to a stress-enhanced transistor and a method for forming the same. The method for forming the transistor according to the present invention comprises the steps of forming a mask layer on a semiconductor substrate on which a gate has been formed, so that the mask layer... Agent: Institute Of Microelectronics, Chinese Academy Of Sciences

20120061739 - Method for fabricating capacitor and semiconductor device using the same: Provided are a method for fabricating a capacitor and a semiconductor device using the same. The semiconductor device includes a MOS transistor capacitor, first and second plate capacitors, and a metal interconnection. The MOS transistor capacitor is arranged between a power supply and a ground. The first and second plate... Agent: Hynix Semiconductor Inc.

20120061740 - Subresolution silicon features and methods for forming the same: Novel etch techniques are provided for shaping silicon features below the photolithographic resolution limits. FinFET devices are defined by recessing oxide and exposing a silicon protrusion to an isotropic etch, at least in the channel region. In one implementation, the protrusion is contoured by a dry isotropic etch having excellent... Agent: Micron Technology, Inc.

20120061742 - Semiconductor memory device and method of fabricating the same: A semiconductor memory includes a memory cell array area provided with first and second memory cells and having a first active area and a first element isolation area constituting a line & space structure, and having a floating gate electrode and a control gate electrode in the first active area,... Agent:

20120061741 - Three-dimensional microelectronic devices including horizontal and vertical patterns: A vertical NAND flash memory device includes a substrate having a face and a string of serially connected flash memory cells on the substrate. A first flash memory cell is adjacent the face, and a last flash memory cell is remote from the face. The flash memory cells include repeating... Agent: Samsung Electronics Co., Ltd.

20120061745 - Method for manufacturing a semiconductor device: There is provided a technology capable of improving the processing precision of memory cells forming a nonvolatile memory in a semiconductor device including the nonvolatile memory. A second polysilicon film is formed in such a manner as to cover a first polysilicon film and a dummy gate electrode. Thus, the... Agent: Renesas Electronics Corporation

20120061743 - Semiconductor memory device and method for manufacturing same: According to one embodiment, a semiconductor memory device includes a stacked body, a contact, a semiconductor member, a charge storage layer, and a penetration member. The stacked body includes an electrode film stacked alternately with an insulating film. A configuration of an end portion of the stacked body is a... Agent: Kabushiki Kaisha Toshiba

20120061744 - Three dimensional semiconductor memory devices: Three dimensional semiconductor memory devices are provided. The three dimensional semiconductor memory device includes a first stacked structure and a second stacked structure sequentially stacked on a substrate. The first stacked structure includes first insulating patterns and first gate patterns which are alternately and repeatedly stacked on a substrate, and... Agent:

20120061746 - Nonvolatile semiconductor memory: According to one embodiment, in a nonvolatile semiconductor memory in which a charge store layer is formed on a tunnel insulating film formed on a channel region of a semiconductor substrate, a first nanoparticle layer containing first conductive nanoparticles is formed on the channel side, and a second nanoparticle layer... Agent:

20120061747 - Semiconductor device: According to one embodiment, a semiconductor device includes a drift region of a first conductivity type, a base region of a second conductivity type, a source region of the first conductivity type, a gate electrode in a trench shape, a contact region of the second conductivity type, a drain electrode,... Agent: Kabushiki Kaisha Toshiba

20120061749 - Power semiconductor device and method for manufacturing the same: In general, according to one embodiment, a power semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a trench, a gate insulating film, and a gate electrode. The second semiconductor layer is provided on the first semiconductor layer.... Agent: Kabushiki Kaisha Toshiba

20120061751 - Recessed memory cell access devices and gate electrodes: Recessed access transistor devices used with semiconductor devices may include gate electrodes having materials with multiple work functions, materials that are electrically isolated from each other and supplied with two or more voltage supplies, or materials that create a diode junction within the gate electrode.... Agent: Micron Technology, Inc.

20120061750 - Semiconductor device and method for manufacturing the same: A semiconductor device and a method for manufacturing the same are disclosed. A recess gate structure is formed between an overlapping region between a gate and a source/drain so as to suppress increase in gate induced drain leakage (GIDL), and a gate insulation film is more thickly deposited in a... Agent: Hynix Semiconductor Inc.

20120061748 - Semiconductor device and method of manufacturing the same: Provided is a method of manufacturing a vertical MOSFET having a trench structure, which is capable of performing stable processing. While leaving a silicon nitride film (13) used to form a trench (7) on a surface of a semiconductor substrate, a gate electrode material (9) is buried inside the trench... Agent:

20120061752 - Single transistor floating-body dram devices having vertical channel transistor structures: Single transistor floating-body DRAM devices have a vertical channel transistor structure. The DRAM devices include a substrate, and first and second floating bodies disposed on the substrate and isolated from each other. A source region and a drain region are disposed under and above each of the first and second... Agent: Samsung Electronics Co., Ltd.

20120061753 - Semiconductor device: A semiconductor device includes: a drain layer; a drift layer provided on the drain layer; a base region provided on the drift layer; a source region selectively provided on a surface of the base region; a first gate; a field-plate; a second gate; a drain electrode; and a source electrode.... Agent: Kabushiki Kaisha Toshiba

20120061754 - Super-junction trench mosfet with resurf stepped oxides and split gate electrodes: A super-junction trench MOSFET with Resurf Stepped Oxide and split gate electrodes is disclosed. The inventive structure can apply additional freedom for better optimization of device performance and manufacturing capability by tuning thick oxide thickness to minimize influence of charge imbalance, trapped charges, etc. Furthermore, the fabrication method can be... Agent: Force Mos Technology Co. Ltd.

20120061755 - Checkerboarded high-voltage vertical transistor layout: In one embodiment, a transistor fabricated on a semiconductor die includes a first section of transistor segments disposed in a first area of the semiconductor die, and a second section of transistor segments disposed in a second area of the semiconductor die adjacent the first area. Each of the transistor... Agent: Power Integrations, Inc.

20120061756 - Semiconductor device and method for manufacturing the same: According to one embodiment, a semiconductor device includes a channel formation region of first conductivity type, a first offset region of second conductivity type, a first insulating region, a first liner layer, a first semiconductor region of second conductivity type, a second semiconductor region of second conductivity type, a gate... Agent: Kabushiki Kaisha Toshiba

20120061757 - Semiconductor device: An ESD tolerance of an LDMOS transistor is improved. An N+ type source layer shaped in a ladder and having a plurality of openings in its center is formed in a surface of a P type base layer using a gate electrode and a resist mask. A P+ type contact... Agent: On Semiconductor Trading, Ltd.

20120061758 - Semiconductor device and related manufacturing method: A semiconductor device and a related fabrication process are presented here. The device includes a support substrate, a buried oxide layer overlying the support substrate, a first semiconductor region located above the buried oxide layer and having a first conductivity type. The device also includes second, third, fourth, and fifth... Agent: Freescale Semiconductor, Inc.

20120061759 - Extremely thin semiconductor-on-insulator (etsoi) fet having a stair-shape raised source/drain and a method of forming the same: A MOSFET device is formed on top of a semiconductor-on-insulator (SOI) substrate having a semiconductor layer with a thickness ranging from 3 nm to 20 nm. A stair-shape raised extension, a raised source region and a raised drain region (S/D) are formed on top of the SOI substrate. The thinner... Agent: International Business Machines Corporation

20120061760 - Method for manufacturing semiconductor device: A method for manufacturing a semiconductor device comprises including a insulating pattern and a silicon film over a SOI substrate, thereby increasing a reduced volume of a floating body after forming a floating body fin transistor so as to secure a data storage space. The method comprises: forming a insulating... Agent: Hynix Semiconductor Inc.

20120061761 - Semiconductor integrated circuit device and manufacturing method for semiconductor integrated circuit devices: Logic transistors (MOSFETs, MISFETs) in core portions of integrated circuits can be microminiaturized by scaling operating voltage as their generation advances. However, since transistors (MOSFETs, MISFETs) in high-breakdown voltage portions operate on relatively high power supply voltage, it is difficult to reduce their size. Similarly, electrostatic discharge (ESD) protection circuits... Agent: Renesas Electronics Corporation

20120061762 - Asymmetric finfet devices: Asymmetric FET devices, and a method for fabricating such asymmetric devices on a fin structure is disclosed. The fabrication method includes disposing over the fin a high-k dielectric layer followed by a threshold-modifying layer, performing an ion bombardment at a tilted angle which removes the threshold-modifying layer over one of... Agent: International Business Machines Corporation

20120061763 - Methods of forming non-volatile memory devices including low-k dielectric gaps in substrates and devices so formed: A method of manufacturing a non-volatile memory device, can be provided by forming a gate insulating layer and a gate conductive layer on a substrate that includes active regions that are defined by device isolation regions that include a carbon-containing silicon oxide layer. The gate conductive layer and the gate... Agent: Samsung Electronics Co., Ltd.

20120061764 - Modified design rules to improve device performance: The layouts, device structures, and methods described above utilize dummy devices to extend the diffusion regions of edge structures and/or non-allowed structures to the dummy device. Such extension of diffusion regions resolves or reduces LOD and edge effect issues. In addition, treating the gate structure of a dummy device next... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120061765 - Anti-fuse based programmable serial number generator: An anti-fuse apparatus includes a substrate of a first conductivity type and a well region of a second conductivity type formed in the substrate. A junction between the well region and the substrate is characterized by a breakdown voltage higher than a predetermined voltage. The apparatus includes a contact region... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20120061766 - Semiconductor device and manufacturing method thereof: In the device, first and second transistors have first and second gates and first and second source/drain regions, respectively. First and second contacts are electrically connected to the first and the second source/drain regions, respectively. A width of a first bottom surface if the first contacts in a gate width... Agent: Kabushiki Kaisha Toshiba

20120061767 - Semiconductor device and manufacturing method thereof: A semiconductor device includes core transistors for forming a logic circuit, and I/O transistors for forming an input/output circuit. A distance from the main surface to a lowermost part of an n-type impurity region NR of the I/O n-type transistor is longer than that from the main surface to a... Agent: Renesas Electronics Corporation

20120061768 - Power amplifier: According to an embodiment, a power amplifier is provided with at least one first growth ring gate structure and multiple second growth ring gate structures. The first growth ring gate structure is bounded by a semiconductor layer and performs a power amplification operation. The multiple second growth ring gate structures... Agent: Kabushiki Kaisha Toshiba

20120061769 - Semiconductor integrated circuit device and a method for manufacturing a semiconductor integrated circuit device: For constituting a pre-metal interlayer insulating film, such a method is considered as forming a CVD silicon oxide-based insulating film having good filling properties by ozone TEOS, reflowing the film to planarize it, stacking a silicon oxide film having good CMP scratch resistance by plasma TEOS, and further planarizing by... Agent: Renesas Electronics Corporation

20120061770 - Nonvolatile memory device and method of manufacturing the same: A method of manufacturing a nonvolatile memory device wherein first gate lines and second gate lines are formed over a semiconductor substrate. The first gate lines are spaced-from each other at a first width, the second gate lines are spaced-from each other at a second width, and the first width... Agent: Hynix Semiconductor Inc.

20120061771 - Mosfet layout and structure: A MOSFET layout is disclosed. The MOSFET comprises a drain region, a gate region, a source region and a body region. The gate region is disposed outside the drain region and adjacent to the drain region. The source region has a plurality of source sections, which are disposed outside of... Agent: Green Solution Technology Co., Ltd.

20120061772 - Transistor having replacement metal gate and process for fabricating the same: A transistor is fabricated by removing a polysilicon gate over a doped region of a substrate and forming a mask layer over the substrate such that the doped region is exposed through a hole within the mask layer. An interfacial layer is deposited on top and side surfaces of the... Agent:

20120061774 - Semiconductor device and manufacturing method of the same: Performance of a semiconductor device having a MIS transistor is improved. A semiconductor device includes: a pair of source/drain regions each formed by stacking a semiconductor layer on a main surface of a silicon substrate; a sidewall insulating film covering each sidewall of the source/drain regions; a gate electrode arranged... Agent: Renesas Electronics Corporation

20120061773 - Semiconductor device and method of fabricating the same: MOSFETs and methods of making MOSFETs are provided. According to one embodiment, a semiconductor device includes a substrate and a Metal-Oxide-Semiconductor (MOS) transistor that includes a semiconductor region formed on the substrate, a source region and drain region formed in the semiconductor region that are separated from each other, a... Agent: Toshiba America Electronic Components, Inc.

20120061775 - Device for use as dual-sided sensor package: A sensor package, and in one embodiment a sensor package for surface mount applications, that comprises a leadframe with an upper and lower surface for receiving a device thereon. Embodiments of the sensor package comprise a first device secured to the upper surface, and a second device secured to the... Agent:

20120061777 - Integrally fabricated micromachine and logic elements: Embodiments relate to micromachine structures. In one embodiment, a micromachine structure includes a first electrode, a second electrode, and a sensing element. The sensing element is mechanically movable and is disposed intermediate the first and second electrodes and adapted to oscillate between the first and second electrodes. Further, the sensing... Agent:

20120061778 - Method and apparatus for producing chip devices, and chip device produced by means of the method: A chip device is produced providing at least one wafer having a plurality of chip components. The wafer or wafers are separated into the individual chip components and/or into groups of chip components. The individual chip components and/or the groups of chip components are applied to a carrier element, in... Agent: Epcos Ag

20120061776 - Wafer level packaging: A method of wafer level packaging includes providing a substrate including a buried oxide layer and a top oxide layer, and etching the substrate to form openings above the buried oxide layer and a micro-electro-mechanical systems (MEMS) resonator element between the openings, the MEMS resonator element enclosed within the buried... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120061784 - Magnetic recording device and magnetic recording apparatus: An example magnetic recording device includes a laminated body. The laminated body includes a first ferromagnetic layer with a magnetization substantially fixed in a first direction; a second ferromagnetic layer with a variable magnetization direction; a first nonmagnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer;... Agent: Kabushiki Kaisha Toshiba

20120061783 - Memory cell with radial barrier: Magnetic tunnel junction cells and methods of making magnetic tunnel junction cells that include a radially protective layer extending proximate at least the ferromagnetic free layer of the cell. The radially protective layer can be specifically chosen in thickness, deposition method, material composition, and/or extent along the cell layers to... Agent: Seagate Technology LLC

20120061779 - Memory element and memory: There is provided a memory element including a magnetic layer that includes at least one kind of element selected from a group consisting of Fe, Co, and Ni, and carbon, has a content of carbon that is equal to or greater than 3 atomic % and less than 70 atomic... Agent: Sony Corporation

20120061781 - Memory element and memory: There is provided a memory element including a magnetic layer that includes FexNiyBz (here, x+y+z=1, 0.2x≦y≦4x, and 0.1(x+y)≦z≦0.4(x+y)) as a main component, and has magnetic anisotropy in a direction perpendicular to a film face; and an oxide layer that is formed of an oxide having a sodium chloride structure or... Agent: Sony Corporation

20120061782 - Spin wave device: A spin wave device comprises a metal layer, a pinned layer, a nonmagnetic layer, a free layer, an antiferromagnetic layer, a first electrode, a first insulator layer, and a second electrode. The pinned layer has a magnetization whose direction is fixed. The free layer has a magnetization whose direction is... Agent: Kabushiki Kaisha Toshiba

20120061780 - Storage element and memory device: Disclosed herein is a storage element, including: a storage layer which has magnetization vertical to a film surface and in which a direction of the magnetization is changed in correspondence to information; a magnetization fixing layer which has magnetization vertical to a film surface becoming a reference of the information... Agent: Sony Corporation

20120061785 - Semiconductor light detecting element and manufacturing method therefor: A photodiode PD1 is provided with an n− type semiconductor substrate 1 with a pn junction formed of a first conductivity type semiconductor region and a second conductivity type semiconductor region. For the n− type semiconductor substrate 1, an accumulation layer 7 is formed on the second principal surface 1b... Agent: Hamamatsu Photonics K.k.

20120061786 - Isolated bond pad with conductive via interconnect: An integrated circuit for use, for example, in a backside illuminated imager device includes circuitry provided on a first side of a substrate, a first conductive pad connected to the circuitry and spaced from the first side of the substrate, a second conductive pad spaced from a second side of... Agent:

20120061787 - Liquid electrical interconnect and devices using same: Various embodiments include interconnects for semiconductor structures that can include a first conductive structure, a second conductive structure and a non-hardening liquid conductive material in contact with the first and second structure. Other embodiments include semiconductor components and imager devices using the interconnects. Further embodiments include methods of forming a... Agent:

20120061788 - Photodiodes with pn-junction on both front and back sides: The present invention is directed toward a dual junction photodiode semiconductor device. The photodiode has a semiconductor substrate of a first conductivity type, a first impurity region of a second conductivity type shallowly diffused on the front side of the semiconductor substrate, a second impurity region of the second conductivity... Agent:

20120061789 - Image sensor with improved noise shielding: An image sensor includes a device wafer including a pixel array for capturing image data bonded to a carrier wafer. Signal lines are disposed adjacent to a side of the carrier wafer opposite the device wafer and a metal noise shielding layer is disposed beneath the pixel array within at... Agent: Omnivision Technologies, Inc.

20120061790 - Structure and method of fabricating a czts photovoltaic device by electrodeposition: Techniques for using electrodeposition to form absorber layers in diodes (e.g., solar cells) are provided. In one aspect, a method for fabricating a diode is provided. The method includes the following steps. A substrate is provided. A backside electrode is formed on the substrate. One or more layers are electrodeposited... Agent: International Business Machines Corporation

20120061791 - Infrared detection device: According to one embodiment, an infrared detection device includes a detection element. The detection element includes a semiconductor substrate, a signal interconnect section, a detection cell and a support section. The semiconductor substrate is provided with a cavity on a surface of the semiconductor substrate. The signal interconnect section is... Agent: Kabushiki Kaisha Toshiba

20120061792 - Bidirectional voltage-regulator diode: In one embodiment, a bidirectional voltage-regulator diode includes first to fifth semiconductor layers formed on an inner surface of a first recess formed in a semiconductor substrate of an N-type in the order. The first semiconductor layer of the N-type has a first impurity concentration lower than an impurity concentration... Agent: Kabushiki Kaisha Toshiba

20120061793 - Parasitic pnp bipolar transistor in a silicon-germanium bicmos process: A parasitic PNP bipolar transistor, wherein a base region includes a first and a second region; the first region is formed in an active area, has a depth larger than shallow trench field oxides, and has its bottom laterally extended into the bottom of the shallow trench field oxides on... Agent:

20120061794 - Methods of forming through wafer interconnects in semiconductor structures using sacrificial material, and semiconductor structures formed by such methods: Methods of fabricating semiconductor structures include providing a sacrificial material within a via recess, forming a first portion of a through wafer interconnect in the semiconductor structure, and replacing the sacrificial material with conductive material to form a second portion of the through wafer interconnect. Semiconductor structures are formed by... Agent: S.o.i. Tec Silicon On Insulator Technologies

20120061795 - Through-substrate via waveguides: A device includes a semiconductor substrate of a first conductivity type, wherein the semiconductor substrate comprises a first surface and a second surface opposite the first surface. A through-substrate via (TSV) extends from the first surface to the second surface of the semiconductor substrate. A well region of a second... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120061796 - Programmable anti-fuse wire bond pads: A mechanically programmable anti-fuse is configured in a thick, top metallic layer of a semiconductor. The metallic layer is selected of a material that possesses malleable properties. The metal anti-fuse programming pad is surrounded, either wholly or in part, by a pad segment. An intervening space between the anti-fuse pad... Agent: Power Gold LLC

20120061797 - Semiconductor device and method of fabricating the same: According to one embodiment, a semiconductor device including a substrate, and an anti-fuse element including a first insulator formed on the substrate, a conductive film formed on the first insulator, the conductive film including a silicide film, a contact formed on the substrate, the contact being disposed adjacent to the... Agent: Kabushiki Kaisha Toshiba

20120061800 - Capacitor element, manufacturing method thereof and semiconductor device: A semiconductor device includes a first capacitive insulating film, a first electrode, and a first barrier film. The first electrode has a first surface containing nitrogen. The first barrier film is between the first capacitive insulating film and the first electrode. The first barrier film faces the first surface of... Agent: Elpida Memory, Inc.

20120061798 - High capacitance trench capacitor: A dual node dielectric trench capacitor includes a stack of layers formed in a trench. The stack of layers include, from bottom to top, a first conductive layer, a first node dielectric layer, a second conductive layer, a second node dielectric layer, and a third conductive layer. The dual node... Agent: International Business Machines Corporation

20120061799 - Yttrium and titanium high-k dielectric films: This disclosure provides (a) methods of making an oxide layer (e.g., a dielectric layer) based on yttrium and titanium, to have a high dielectric constant and low leakage characteristic and (b) related devices and structures. An oxide layer having both yttrium and titanium may be fabricated either as an amorphous... Agent:

20120061801 - Structure, design structure and method of manufacturing a structure having vias and high density capacitors: A method of making a semiconductor structure includes forming at least a first trench and a second trench having different depths in a substrate, forming a capacitor in the first trench, and forming a via in the second trench. A semiconductor structure includes a capacitor arranged in a first trench... Agent: International Business Machines Corporation

20120061802 - Bipolar junction transistor: A bipolar junction transistor includes a semiconductor island on an insulating substrate; an emitter and at least one of a collector and sub collector within the semiconductor island, the emitter and the at least one of the collector and the sub collector being of a first conductivity type; a base... Agent:

20120061803 - Asymmetrical bidirectional protection component: An asymmetrical bidirectional protection component formed in a semiconductor substrate of a first conductivity type, including: a first implanted area of the first conductivity type; a first epitaxial layer of the second conductivity type on the substrate and the first implanted area; a second epitaxial layer of the second conductivity... Agent: Stmicroelectronics (tours) Sas

20120061804 - Systems and methods for enabling esd protection on 3-d stacked devices: An electrostatic discharge (ESD) protection device is fabricated in a vertical space between active layers of stacked semiconductor dies thereby utilizing space that would otherwise be used only for communication purposes. The vertical surface area of the through silicon vias (TSVs) is used for absorbing large voltages resulting from ESD... Agent: Qualcomm Incorporated

20120061805 - Dicing die bond film: The present invention provides a dicing die bond film in which peeling electrification hardly occurs and which has good tackiness and workability. The dicing die bond film of the present invention is a dicing die bond film including a dicing film and a thermosetting type die bond film provided thereon,... Agent:

20120061806 - Systems and methods for drying a rotating substrate: A method of drying a surface of a substrate is provided. The method includes supporting a substrate; rotating the substrate about a rotational center point; applying a liquid to the substrate via a liquid dispenser; applying a drying fluid to the substrate via a drying fluid dispenser; moving the drying... Agent:

20120061807 - Pitch multiplied mask patterns for isolated features: Crisscrossing spacers formed by pitch multiplication are used to form isolated features, such as contacts vias. A first plurality of mandrels are formed on a first level and a first plurality of spacers are formed around each of the mandrels. A second plurality of mandrels is formed on a second... Agent: Micron Technology, Inc.

20120061809 - Method for manufacturing substrate for semiconductor element, and semiconductor device: Provided is a manufacturing method of a substrate for a semiconductor element, the manufacturing method including the steps of: providing a first photosensitive resin layer at a first surface of a metal plate; providing a second photosensitive resin layer at a second surface of the metal plate different from the... Agent: Toppan Printing Co., Ltd

20120061808 - Semiconductor packages having increased input/output capacity and related methods: A semiconductor package includes leads around the periphery of a chip and leads under the chip having connecting segments for increasing I/O capability. A filling material may be used under the chip, which may provide a lead locking function. Various methods of forming the semiconductor package are further provided.... Agent:

20120061810 - Led lead frame having different mounting surfaces: An LED lead frame comprises an insulative housing including a top surface, a bottom surface, and four side surfaces connected the top surface and the bottom surface, and a cavity recessed from the top surface. A pair of conductive leads each has a portion embedded into the insulative housing and... Agent: Hon Hai Precision Industry Co., Ltd.

20120061811 - Apparatus and method configured to lower thermal stresses: An apparatus and a method configured to lower thermal stress is disclosed. One embodiment provides a semiconductor chip, a heat sink plate and a layer structure. The layer structure includes at least a diffusion solder layer and a buffer layer. The layer structure is arranged between the semiconductor chip and... Agent: Infineon Technologies Ag

20120061813 - Package structure for dc-dc converter: A package structure for DC-DC converter disclosed herein can reduce the number of encapsulated elements as a low-side MOSFET chip can be stacked above the high-side MOSFET chip of a first die pad, through die pads of different thicknesses or interposers with joint parts of different thicknesses; moreover, it further... Agent:

20120061812 - Power semiconductor chip package: A device includes a vertical power semiconductor chip having an epitaxial layer and a bulk semiconductor layer. A first contact pad is arranged on a first main face of the power semiconductor chip and a second contact pad is arranged on a second main face of the power semiconductor chip... Agent:

20120061815 - Power semiconductor module having sintered metal connections, preferably sintered silver connections, and production method: A power semiconductor module having a substrate (102), at least one power semiconductor device (104) and at least one lead frame element (106), and a method for producing such a power semiconductor module (100). The connection between the at least one first lead frame element and the power semiconductor device... Agent: Vincotech Holdings S.a.r.l.

20120061814 - Semiconductor device and method of forming leadframe interposer over semiconductor die and tsv substrate for vertical electrical interconnect: A semiconductor device has a substrate with a plurality of conductive vias formed through the substrate and first conductive layer formed over the substrate. A first semiconductor die is mounted over the substrate. A second semiconductor die can be mounted over the first semiconductor die. A leadframe interposer has a... Agent: Stats Chippac, Ltd.

20120061816 - Semiconductor package and method of fabricating the same: Provided are a semiconductor package and method of fabricating the same. The package includes an interconnection substrate, a semiconductor chip mounted on the interconnection substrate, a lateral wire bonded on the interconnection substrate and configured to enclose a side surface of the semiconductor chip, and a metal layer disposed on... Agent: Samsung Electronics Co., Ltd.

20120061817 - Semiconductor device and manufacturing method of the same: A semiconductor chip is mounted on a heat sink disposed inside a through-hole of a wiring board, electrodes of the semiconductor chip and connecting terminals of the wiring board are connected by bonding wires, a sealing resin is formed to cover the semiconductor chip and the bonding wires, and solder... Agent: Renesas Electronics Corporation

20120061818 - 3-d integrated semiconductor device comprising intermediate heat spreading capabilites: In a three-dimensional chip configuration, a heat spreading material may be positioned between adjacent chips and also between a chip and a carrier substrate, thereby significantly enhancing heat dissipation capability. Furthermore, appropriately sized and positioned through holes in the heat spreading material may enable electrical chip-to-chip connections, while responding thermally... Agent: Globalfoundries Inc.

20120061820 - Method for manufacturing electronic component, and electronic component: Provided is a method for manufacturing an electronic component by using a solder joining method for bonding a first electronic component having a metal electrode with a second electronic component having a solder electrode, the method comprising; (i) forming a resin layer containing a thermosetting resin on at least one... Agent:

20120061819 - Semiconductor module and method for production thereof: This invention relates to a module including a semiconductor chip, at least two contact elements and an insulating material between the two contact elements. Furthermore, the invention relates to a method for production of such a module.... Agent:

20120061830 - Back side protective structure for a semiconductor package: A back side protective structure for a semiconductor package provided with a conductive layer, which is elastic and contains conductive material, formed between a protection substrate and an adhesive layer for having the protection substrate more stably fixed on the semiconductor package and protecting the back side of the semiconductor... Agent:

20120061825 - Chip scale package and method of fabricating the same: A chip scale package and a method of fabricating the chip scale package. The chip scale package includes a encapsulant having a first surface and a second surface opposing the first surface; a conductive pillar formed in the encapsulant and exposed from the first surface and the second surface; a... Agent: Siliconware Precision Industries Co., Ltd.

20120061829 - Method for manufacturing substrate for semiconductor element, and semiconductor device: A manufacturing method of a substrate for a semiconductor element, wherein a first step includes: forming a first and second photosensitive resin layer on a first and second surface of a metal plate, respectively; forming a first and second resist pattern on the first and second surface, for forming a... Agent: Toppan Printing Co., Ltd.

20120061821 - Semiconductor chip with redundant thru-silicon-vias: A semiconductor chip with conductive vias and a method of manufacturing the same are disclosed. The method includes forming a first plurality of conductive vias in a layer of a first semiconductor chip. The first plurality of conductive vias includes first ends and second ends. A first conductor pad is... Agent:

20120061826 - Semiconductor device: A device includes a substrate, a semiconductor chip, first and second pads, and a first wiring layer. The substrate includes first and second surfaces. The semiconductor chip includes third and fourth surfaces. The third surface faces toward the first surface. The first and second pads are provided on the third... Agent: Elpida Memory, Inc.

20120061827 - Semiconductor device: A semiconductor device includes a semiconductor substrate having a first surface, a through silicon via (TSV) that is formed so that at least a part thereof penetrates through the semiconductor substrate, and an insulation ring. The insulation ring is formed so as to penetrate through the semiconductor substrate and so... Agent: Elpida Memory, Inc.

20120061828 - Semiconductor device and layout method of semiconductor device: A semiconductor device that is resin-sealed in a wafer level after a rewiring layer forming process and a metal post forming process forming a metal post are performed on a semiconductor substrate of the semiconductor device includes devices formed on the semiconductor substrate. Further all of the devices are disposed... Agent: Ricoh Company, Ltd.

20120061822 - Semiconductor device and method of forming base substrate with cavities formed through etch-resistant conductive layer for bump locking: A semiconductor device has a base substrate with first and second etch-resistant conductive layers formed over opposing surfaces of the base substrate. First cavities are etched in the base substrate through an opening in the first conductive layer. The first cavities have a width greater than a width of the... Agent: Stats Chippac, Ltd.

20120061824 - Semiconductor device and method of forming bond-on-lead interconnection for mounting semiconductor die in fo-wlcsp: A semiconductor die has a conductive layer including a plurality of trace lines formed over a carrier. The conductive layer includes a plurality of contact pads electrically continuous with the trace lines. A semiconductor die has a plurality of contact pads and bumps formed over the contact pads. A plurality... Agent: Stats Chippac, Ltd.

20120061823 - Semiconductor device having pad structure with stress buffer layer: A semiconductor device has a pad structure with a ring-shaped stress buffer layer between a metal pad and an under-bump metallization (UBM) layer. The stress buffer layer is formed of a dielectric layer with a dielectric constant less than 3.5, a polymer layer, or an aluminum layer. The stress buffer... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120061831 - Semiconductor package and method for making the same: A semiconductor package includes: a semiconductor substrate; an inner insulator layer formed on the substrate; at least one internal wiring extending from a front side of the substrate along one of lateral sides of the substrate to a rear side of the substrate; a first outer insulator layer disposed at... Agent:

20120061832 - Collar structure around solder balls that connect semiconductor die to semiconductor chip package substrate: In one embodiment, a collar structure includes a non-conductive layer that relieves stress around the perimeter of each of the solder balls that connect the semiconductor die to the semiconductor chip package substrate, and another non-conductive layer placed underneath to passivate the entire surface of the die.... Agent: International Business Machines Corporation

20120061833 - Embedded ball grid array substrate and manufacturing method thereof: Disclosed herein are an embedded ball grid array substrate and a manufacturing method thereof. The embedded ball grid array includes: a core layer having a cavity therein; a semiconductor device embedded in the cavity of the core layer; a first circuit layer having a circuit pattern including a wire bonding... Agent: Samsung Electro-mechanics Co., Ltd.

20120061834 - Semiconductor chip, stacked chip semiconductor package including the same, and fabricating method thereof: A semiconductor chip includes a silicon wafer formed with a via hole, a metal wire disposed in the via hole, and a filler that exposes a part of an upper portion of the metal wire while filing the via hole.... Agent: Hynix Semiconductor Inc.

20120061835 - Die structure, die arrangement and method of processing a die: A die structure includes a die and a metallization layer disposed over the front side of the die. The metallization layer includes copper. At least a part of the metallization layer has a rough surface profile. The part with the rough surface profile includes a wire bonding region, to which... Agent: Infineon Technologies Ag

20120061837 - Method of manufacturing semiconductor device and semiconductor device: In a method of manufacturing a semiconductor device according to an embodiment, an etching stopper, an oxide film and a mask material are formed. A trench pattern is formed in the mask material. The oxide film is etched to form the trench pattern therein by using the mask material having... Agent: Kabushiki Kaisha Toshiba

20120061836 - Spray pyrolysis of y-doped zno: One example embodiment includes a method for applying a transparent conducting oxide. The method includes providing a solution, where the solution includes a solvent, a zinc precursor and an yttrium precursor. The method also includes spraying the solution on a heated substrate, where the heated substrate turns the solution into... Agent: Tao Companies LLC

20120061838 - Barrier layer formation for metal interconnects through enhanced impurity diffusion: A method of forming a barrier layer for metal interconnects of an integrated circuit device includes forming a first cap layer over a top surface of a conductive line of the integrated circuit device in a manner that facilitates a controllable dose of oxygen provided to the top surface of... Agent: International Business Machines Corporation

20120061840 - Damascene interconnection structure and dual damascene process thereof: A dual damascene structure is disclosed. The dual damascene structure includes: a substrate comprising thereon a base dielectric layer and a lower wiring layer inlaid in the base dielectric layer; a dielectric layer on the substrate; a via opening in the dielectric layer, wherein the via opening misaligns with the... Agent:

20120061839 - Metal cap layer with enhanced etch resistivity for copper-based metal regions in semiconductor devices: During the fabrication of sophisticated metallization systems of semiconductor devices, material deterioration of conductive cap layers may be significantly reduced by providing a noble metal on exposed surface areas after the patterning of the corresponding via openings. Hence, well-established wet chemical etch chemistries may be used while not unduly contributing... Agent: Globalfoundries Inc.

20120061841 - Semiconductor integrated circuit, manufacturing method thereof, and semiconductor device using semiconductor integrated circuit: A step of forming a through hole in a semiconductor substrate, or a step of polishing the semiconductor substrate from its back surface requires a very long time and causes decrease of productivity. In addition, when semiconductor substrates are stacked, a semiconductor integrated circuit which is formed of the stack... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120061843 - Semiconductor package and method for manufacturing the same: A semiconductor package includes a semiconductor chip having a first surface, on which an electrode pad is arranged, and a second surface which is the other side of the semiconductor chip, an insulation member formed on the second surface of the semiconductor chip, and comprising a via hole at a... Agent: Hynix Semiconductor Inc.

20120061842 - Stack package and method for manufacturing the same: A stack package includes a substrate, a lower semiconductor chip stacked on the substrate and electrically connected to the substrate through a lower via, a plurality of upper semiconductor chips stacked on the lower semiconductor chip and electrically connected to the lower via through an upper via, wherein the upper... Agent: Hynix Semiconductor Inc.

20120061844 - Copper alloy for wiring, semiconductor device, method for forming wiring, and method for manufacturing semiconductor device: A wiring metal contains a polycrystal of copper (Cu) as a primary element and an additional element other than Cu, and concentration of the additional element is, at crystal grain boundaries composing the Cu polycrystal and in vicinities of the crystal grain boundaries, higher than that of the inside of... Agent: Nec Corporation

20120061846 - Compliant printed circuit area array semiconductor device package: An integrated circuit (IC) package for an IC device, and a method of making the same. The IC package includes an interconnect assembly with at least one printed compliant layer, a plurality of first contact members located along a first major surface, a plurality of second contact members located along... Agent: Hsio Technologies, LLC

20120061845 - Methods for filling a contact hole in a chip package arrangement and chip package arrangements: In various embodiments, a method for filling a contact hole in a chip package arrangement is provided. The method may include introducing electrically conductive discrete particles into a contact hole of a chip package; and forming an electrical contact between the electrically conductive particles and a contact terminal of the... Agent: Infineon Technologies Ag

20120061847 - Semiconductor device and manufacturing method thereof: A semiconductor device and manufacturing method thereof improving moisture resistance of a FeRAM. After a probe test using a pad, a metal film is formed to cover the pad in an opening of a protective film and a region from the pad to an opening outer periphery of the protective... Agent: Fujitsu Semiconductor Limited

20120061848 - Chip assembly with a coreless substrate employing a patterned adhesive layer: A patterned adhesive layer including holes is employed to attach a coreless substrate layer to a stiffner. The patterned adhesive layer is confined to kerf regions, which are subsequently removed during singulation. Each hole in the patterned adhesive layer has an area that is greater than the area of a... Agent: International Business Machines Corporation

20120061849 - Semiconductor component and device provided with heat dissipation means: A first component includes a slice formed from an integrated circuit chip having a front face and a rear face. An encapsulation block encapsulates the integrated circuit chip such that front and rear faces of the chip and front and rear faces of the encapsulation block are co-planar to form... Agent: Stmicroelectronics (grenoble 2) Sas

20120061850 - Semiconductor device and method of manufacturing the same: To achieve a reduction in cost of a semiconductor device, in a common board (a wiring board), a plurality of bonding leads each extend toward the center of the board, and a solder resist film as a die bonding region supporting a minimum chip is coated with a die bonding... Agent: Renesas Electronics Corporation

20120061851 - Simulated wirebond semiconductor package: A semiconductor package with simulated wirebonds. A substrate is provided with a plurality of first pads on a first surface and a plurality of second pads on a second surface. Each of the first pads are electrically coupled to one or more of the second pads. At least one semiconductor... Agent: Hsio Technologies, LLC

20120061852 - Semiconductor chip device with polymeric filler trench: A method of manufacturing is provided that includes providing a semiconductor chip with an insulating layer. The insulating layer includes a trench. A second semiconductor chip is stacked on the first semiconductor chip to leave a gap. A polymeric filler is placed in the gap wherein a portion of the... Agent:

20120061855 - Integrated circuit packaging system with film encapsulation and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing a package substrate having a substrate bottom side and a substrate top side opposite the substrate bottom side; mounting an integrated circuit over the package substrate, the integrated circuit having an inactive side and an active side opposite... Agent:

20120061854 - Integrated circuit packaging system with package-on-package and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing a bottom substrate; mounting a bottom integrated circuit over the bottom substrate; mounting a top substrate over a side of the bottom integrated circuit opposite the bottom substrate; connecting a top interconnect between the bottom substrate and the... Agent:

20120061853 - Semiconductor chip device with underfill: A method of manufacturing is provided that includes placing a removable cover on a surface of a substrate. The substrate includes a first semiconductor chip positioned on the surface. The first semiconductor chip includes a first sidewall. The removable cover includes a second sidewall positioned opposite the first sidewall. A... Agent:

20120061856 - Apparatus and methods for high-density chip connectivity: An electronic circuit and method may include a first chip including first electronics and a first connector including multiple self-alignment features and conductive pads. A second chip may include second electronics and a second connector including multiple self-alignment features and conductive pads. The first chip and second chip may be... Agent: Solvisions Technologies Interantional Inc.

20120061857 - Electronic packaging with a variable thickness mold cap: An electronic package with improved warpage compensation. The electronic package includes a mold cap having a variable thickness. The variable thickness can have a mound or dimple design. In another embodiment, a method is provided for reducing unit warpage of an electronic package by designing the topography of a mold... Agent: Qualcomm Incorporated

20120061859 - Integrated circuit packaging system with encapsulant containment and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing a substrate; forming layers having non-horizontal strip patterns and non-vertical strip patterns over the substrate; mounting an integrated circuit device on the substrate adjacent the non-horizontal strip patterns and the non-vertical strip patterns; and applying an encapsulation over... Agent:

20120061860 - Method for constructing an electrical circuit, and electrical circuit: A method for constructing an electrical circuit that includes at least one semiconductor chip encapsulated with a potting compound is disclosed. The method includes applying a galvanic layer arrangement for forming an electrochemical element on an element of the electrical circuit including the at least one semiconductor chip.... Agent: Robert Bosch Gmbh

20120061858 - Semiconductor device and method of forming mold underfill using dispensing needle having same width as semiconductor die: A semiconductor device has a semiconductor die mounted over a surface of a substrate. A mold underfill dispensing needle has a width substantially equal to a width of the semiconductor die. The dispensing needle is placed in fluid communication with a side of the semiconductor die. A mold underfill is... Agent: Stats Chippac, Ltd.

20120061861 - Resin composition for encapsulating semiconductor and semiconductor device: Disclosed is a resin composition for encapsulating a semiconductor including a phenol resin (A) having one or more components containing a component (A1) composed of a polymer having a first structural unit and a second structural unit, an epoxy resin (B), and an inorganic filler (C). Also disclosed is a... Agent:

20120056147 - Large array of upward pointinig p-i-n diodes having large and uniform current: A circuit is provided that includes a plurality of vertically oriented p-i-n diodes. Each p-i-n diode is coupled to a resistivity-switching element and includes a bottom heavily doped p-type region. When a voltage between about 1.5 volts and about 3.0 volts is applied across each p-i-n diode, a current of... Agent:

20120056145 - Nonvolatile memory device and method for manufacturing same: According to one embodiment, a nonvolatile memory device includes a selection element layer and a nanomaterial aggregate layer. The selection element layer includes silicon. The nanomaterial aggregate layer is stacked on the selection element layer. The nanomaterial aggregate layer includes a plurality of micro conductive bodies and fine particles dispersed... Agent: Kabushiki Kaisha Toshiba

20120056146 - Resistive memory architectures with multiple memory cells per access device: A resistive memory structure, for example, phase change memory structure, includes one access device and two or more resistive memory cells. Each memory cell is coupled to a rectifying device to prevent parallel leak current from flowing through non-selected memory cells. In an array of resistive memory bit structures, resistive... Agent: Micron Technology, Inc.

20120056148 - Semiconductor device: A semiconductor device may include, but is not limited to: a first insulating film; a second insulating film over the first insulating film; a first memory structure between the first and second insulating films; and a third insulating film between the first and second insulating films. The first memory structure... Agent: Elpida Memory, Inc.

20120056151 - Memory devices, memory device constructions, constructions, memory device forming methods, current conducting devices, and memory cell programming methods: Some embodiments include memory devices having a wordline, a bitline, a memory element selectively configurable in one of three or more different resistive states, and a diode configured to allow a current to flow from the wordline through the memory element to the bitline responsive to a voltage being applied... Agent:

20120056149 - Methods for adjusting the conductivity range of a nanotube fabric layer: Methods for adjusting and/or limiting the conductivity range of a nanotube fabric layer are disclosed. In some aspects, the conductivity of a nanotube fabric layer is adjusted by functionalizing the nanotube elements within the fabric layer via wet chemistry techniques. In some aspects, the conductivity of a nanotube fabric layer... Agent: Nantero, Inc.

20120056150 - Nitride semiconductor light-emitting device with electrode pattern: A nitride semiconductor light-emitting device with an electron pattern that applies current uniformly to an active layer to improve light emission efficiency is provided. The nitride semiconductor light-emitting device includes multiple layers of a substrate, an n-type nitride layer, an active layer of a multi-quantum-well structure, and a p-type nitride... Agent: Samsung Led Co., Ltd.

20120056152 - Light emitting devices: In one aspect of the invention, a light emitting device includes an epi layer having multiple layers of semiconductors formed on a substrate, a first electrode and a second electrode having opposite polarities with each other, and electrically coupled to corresponding semiconductor layers, respectively, of the epi layer, and a... Agent: Chi Mei Lighting Technology Corporation

20120056158 - Light emitting diodes with a p-type surface bonded to a transparent submount to increase light extraction efficiency: An (Al,Ga,In)N-based light emitting diode (LED), comprising a p-type surface of the LED bonded with a transparent submount material to increase light extraction at the p-type surface, wherein the LED is a substrateless membrane.... Agent: The Regents Of The University Of California

20120056154 - Method of fabricating semiconductor light emitting device and semiconductor light emitting device: A method of fabricating semiconductor light emitting device forms a laminated film by laminating an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer in order on a uneven main surface of a first substrate, forms a plurality of first electrodes, on an upper surface of... Agent: Kabushiki Kaisha Toshiba

20120056153 - Semiconductor device: A semiconductor device of an embodiment includes: a semiconductor layer made of p-type nitride semiconductor; an oxide layer formed on the semiconductor layer, the oxide layer being made of a polycrystalline nickel oxide, and the oxide layer having a thickness of 3 nm or less; and a metal layer formed... Agent: Kabushiki Kaisha Toshiba

20120056156 - Semiconductor light emitting device: According to one embodiment, a semiconductor light emitting device includes a first conductivity type semiconductor layer, a light emitting layer and a second conductivity type semiconductor layer. The first conductivity type layer has a superlattice structure. First semiconductor layers and second semiconductor layers are alternately provided in the superlattice structure.... Agent: Kabushiki Kaisha Toshiba

20120056157 - Semiconductor light emitting device and method for manufacturing same: According to one embodiment, a semiconductor light emitting device includes an n-type layer, a p-type layer, and a light emitting unit provided between the n-type layer and the p-type layer and including barrier layers and well layers. At least one of the barrier layers includes first and second portion layers.... Agent: Kabushiki Kaisha Toshiba

20120056155 - Semiconductor light emitting device and method for manufacturing the same: A semiconductor light emitting device includes a structural body, a first electrode layer, and a second electrode layer. The structural body includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer between the first semiconductor layer... Agent: Kabushiki Kaisha Toshiba

20120056159 - Controlled quantum dot growth: The present disclosure generally relates to techniques for controlled quantum dot growth as well as a quantum dot structures. In some examples, a method is described that includes one or more of providing a substrate, forming a defect on the substrate, depositing a layer on the substrate and forming quantum... Agent: Empire Technology Development LLC

20120056160 - Materials, systems and methods for optoelectronic devices: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically... Agent: Invisage Technologies, Inc.

20120056161 - Graphene transistor with a self-aligned gate: A graphene-based field effect transistor includes source and drain electrodes that are self-aligned to a gate electrode. A stack of a seed layer and a dielectric metal oxide layer is deposited over a patterned graphene layer. A conductive material stack of a first metal portion and a second metal portion... Agent: International Business Machines Corporation

20120056170 - Composition comprising at least one emitter compound and at least one polymer having conjugation-interrupting units: The present invention relates to a composition, containing at least one emitter compound and at least one polymer with conjugation-interrupting units, to the use of said composition in an optoelectronic apparatus and to an optoelectronic apparatus which contains said inventive composition.... Agent: Merck Patent Gmbh

20120056171 - Compound for organic photoelectric device and organic photoelectric device including the same: A compound for an organic photoelectric device, organic photoelectric device, and a display device, the compound being represented by the following Chemical Formula 1:... Agent:

20120056164 - Display apparatus: c

20120056168 - Fluoropolymer and thin organic film comprising same:

20120056167 - Method for fabrication of layered heterojunction polymeric devices: Method for growing multilayer polymer based heterojunction devices which uses selective breaking of C—H or Si—H bonds without breaking other bonds leading to fast curing for the production of layered polymer devices having polymer heterojunctions deposited by the common solution-based deposition methods. In one embodiment, a hydrogen plasma is maintained... Agent: The University Of Western Ontario

20120056162 - Novel compound and organic light-emitting diode, display and illuminating device using the same: where Cu+ represents a copper ion, PR1R2R3 is a phosphine compound coordinating with Cu+, where R1, R2 and R3 may be the same or different, and represent a linear, branched or cyclic alkyl group having 1-6 carbon atoms or an aromatic cyclic group which may have a substituent, R4 is... Agent: Kabushiki Kaisha Toshiba

20120056163 - Novel compound and organic light-emitting diode, display and lighting device using the same: where Cu represents a copper, PR1R2R3 is a phosphine compound coordinating with Cu, where R1, R2, R3, R4 and R5 may be the same or different, and represent a linear, branched or cyclic alkyl group having 1-6 carbon atoms or an aromatic cyclic group which may have a substituent, R6,... Agent: Kabushiki Kaisha Toshiba

20120056169 - Organic electroluminescent device: The present invention relates to phosphorescent organic electroluminescent devices which comprise at least one phosphorescent emitter and a mixture of at least two matrix materials in the emitting layer.... Agent: Merck Patent Gmbh Patents & Scientific Information

20120056172 - Organic light-emitting device: wherein R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, R12, R13, R14, R15, and R16 each represent, independently of one another, a hydrogen atom, an alkyl group, a substituted or unsubstituted aralkyl group, a substituted or unsubstituted aryl group, a substituted or unsubstituted heterocyclic group, a substituted... Agent: Canon Kabushiki Kaisha

20120056165 - Organic luminescent medium: An organic luminescent medium including an aromatic amine derivative represented by the following formula (1) and an anthracene derivative represented by the following formula (I):... Agent: Idemitsu Kosan Co., Ltd.

20120056166 - Organic semiconductor material, organic semiconductor thin film, and organic thin-film transistor: wherein A represents a cyclic conjugated skeleton structure formed of one or more aromatic rings, and R1 and R2 each independently represent a substituted or unsubstituted alkyl group. The organic semiconductor material has high electron mobility and high on/off ratio, and can form an organic semiconductor thin film by a... Agent: Dainichiseika Color & Chemicals Mfg. Co., Ltd.

20120056175 - Field effect transistor and method for manufacturing semiconductor device: A structure with which the zero current of a field effect transistor using a conductor-semiconductor junction can be reduced is provided. A floating electrode (102) including a conductor or a semiconductor and being enclosed by an insulator (104) is formed between a semiconductor layer (101) and a gate (105) so... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120056174 - Organic light emitting display apparatus: An OLED apparatus including a substrate with a lower active layer thereon and including an oxide semiconductor for generating current in response to light; an etching prevention layer on an upper portion of the lower active layer and including a contact hole; a source/drain electrode on the etching prevention layer... Agent:

20120056176 - Sputtering target and method for manufacturing semiconductor device: An object is to provide a deposition technique for depositing an oxide semiconductor film. Another object is to provide a method for manufacturing a highly reliable semiconductor element using the oxide semiconductor film. A novel sputtering target obtained by removing an alkali metal, an alkaline earth metal, and hydrogen that... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120056173 - Staggered thin film transistor and method of forming the same: A staggered thin film transistor and a method of forming the staggered thin film transistor are provided. The thin film transistor includes an annealed layer stack including an oxide containing layer, a copper alloy layer deposited on the conductive oxide layer, a copper containing oxide layer, and a copper containing... Agent: Applied Materials, Inc.

20120056177 - 3d integrated circuit structure and method for detecting chip mis-alignement: The present application discloses a 3D integrated circuit structure and a method for detecting whether there is misalignment between chip structures. The circuit structure comprises a first chip structure which comprises a first semiconductor substrate, a first insulating layer, and a first detection structure; the first detection structure comprises detection... Agent:

20120056178 - Multi-chip packages: A multi-chip package may include a package substrate, a plurality of semiconductor chips and conductive connecting members. The semiconductor chips may be sequentially stacked on the package substrate. Each of the semiconductor chips may include a signal pad and a test pad. The conductive wires may be electrically connected between... Agent: Samsung Electronics Co., Ltd.

20120056179 - Photo sensor, method of manufacturing photo sensor, and display apparatus: A photo sensor, a method of manufacturing the photo sensor, and a display apparatus, the photo sensor including a substrate; a light receiving unit on the substrate, the light receiving unit including an amorphous semiconductor material; a first adjacent unit and a second adjacent unit formed as one body with... Agent:

20120056183 - Gate insulator layer for organic electronic devices: Embodiments in accordance with the present invention provide for the use of polycycloolefins in electronic devices and more specifically to the use of such polycycloolefins as gate insulator layers used in the fabrication of electronic devices, the electronic devices that encompass such polycycloolefin gate insulator and processes for preparing such... Agent: Merck Patent Gmbh

20120056181 - Method of manufacturing electronic element and electronic element: There is provided a method of manufacturing an electronic element for forming the electronic element including one or more wiring layers and an organic insulating layer stacked on a substrate. The method includes a wiring layer formation step of forming the wiring layer on the substrate; an organic insulating layer... Agent: Sony Corporation

20120056182 - Semiconductor device and manufacturing method thereof: A manufacturing method of a semiconductor device having a stacked structure in which a lower layer is exposed is provided without increasing the number of masks. A source electrode layer and a drain electrode layer are formed by forming a conductive film to have a two-layer structure, forming an etching... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120056180 - Thin film transistor and fabricating method thereof: A thin film transistor including a substrate, a semiconductor layer, a patterned doped semiconductor layer, a source and a drain, a gate insulation layer, and a gate is provided. The semiconductor layer is disposed on the substrate. The patterned doped semiconductor layer is disposed on opposite sides of the semiconductor... Agent: Au Optronics Corporation

20120056186 - Active matrix substrate, display panel, and testing method for active matrix substrate and display panel: An active matrix substrate including: gate lines; source lines arranged in a direction orthogonal to each of the gate lines; a gate short-circuit line to short-circuit the gate lines; a source short-circuit line to short-circuit the source lines; gate line thin film transistors each having a drain electrode being connected... Agent: Panasonic Corporation

20120056185 - Liquid crystal display device: In an IPS type liquid crystal display device having a reduced number of layers and formed through a reduced number of photolithography steps, an off current of a TFT is prevented from increasing due to photocurrent. A drain line, a TFT drain electrode, and a source electrode each have a... Agent: Hitachi Displays, Ltd.

20120056184 - Organic light-emitting display apparatus and method of manufacturing the same: An organic light-emitting display apparatus includes a light-shielding layer formed on a pixel defining layer to prevent external light or internal light from entering an active layer of a thin-film transistor (TFT), thus improving the stability of the active layer, and a method of manufacturing the organic light-emitting display apparatus.... Agent:

20120056187 - Method of forming polycrystalline silicon layer, and thin film transistor and organic light emitting device including the polycrystalline silicon layer: A method of forming a polycrystalline silicon layer includes forming a first amorphous silicon layer and forming a second amorphous silicon layer such that the first amorphous silicon layer and the second amorphous silicon layer have different film qualities from each other, and crystallizing the first amorphous silicon layer and... Agent:

20120056190 - El display device and a method of manufacturing the same: To provide a high throughput film deposition means for film depositing an organic EL material made of polymer accurately and without any positional shift. A pixel portion is divided into a plurality of pixel rows by a bank, and a head portion of a thin film deposition apparatus is scanned... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120056188 - Organic light emitting diode display and manufacturing method thereof: The described technology relates generally to an OLED display and manufacturing method thereof. The OLED display includes a substrate, a thin film transistor on the substrate and including a semiconductor layer, a gate electrode, a source electrode, and a drain electrode, and an organic light emitting element coupled to the... Agent:

20120056189 - Thin film transistor, method for manufacturing the same, and display device using the same: A thin film transistor includes a substrate, a semiconductor layer provided on the substrate and crystallized by using a metal catalyst, a gate electrode insulated from and disposed on the semiconductor layer, and a getter layer disposed between the semiconductor layer and the gate electrode and formed with a metal... Agent:

20120056192 - Compound semiconductor image sensor: A stack-type image sensor using a compound semiconductor. The stack-type image sensor includes a stack of photoelectric conversion units which are sequentially arranged in a light incident direction and which absorb light in ascending order of a wavelength from shortest to longest.... Agent: Samsung Electronics Co., Ltd.

20120056191 - Semiconductor device, method of manufacturing the same, and power supply apparatus: A semiconductor device includes a GaN electron transport layer provided over a substrate; a first AlGaN electron supply layer provided over the GaN electron transport layer; an AlN electron supply layer provided over the first AlGaN electron supply layer; a second AlGaN electron supply layer provided over the AlN electron... Agent: Fujitsu Limited

20120056193 - Series connected segmented led: A light source and method for making the same are disclosed. The light source includes a conducting substrate, and a light emitting structure that is divided into segments. The light emitting structure includes a first layer of semiconductor material of a first conductivity type deposited on the substrate, an active... Agent:

20120056194 - Barrier structures and methods of forming same to facilitate silicon carbide epitaxy and silicon carbide-based memory fabrication: Embodiments of the invention relate generally to semiconductors and semiconductor fabrication techniques, and more particularly, to devices, integrated circuits, substrates, wafers and methods to form barrier structures to facilitate formation of silicon carbide epitaxy on a substrate, such as a silicon-based substrate, for fabricating various silicon carbide-based semiconductor devices, including... Agent: Qs Semiconductor Australia Pty Ltd

20120056201 - Insulated gate bipolar transistor: An IGBT, which is a vertical type IGBT allowing for reduced on-resistance while restraining defects from being produced, includes: a silicon carbide substrate, a drift layer, a well region, an n+ region, an emitter contact electrode, a gate oxide film, a gate electrode, and a collector electrode. The silicon carbide... Agent: Sumitomo Electric Industries, Ltd.

20120056200 - Integrated electronic device with edge-termination structure and manufacturing method thereof: An embodiment of an integrated electronic device formed in a semiconductor body delimited by a lateral surface, which includes: a substrate made of a first semiconductor material; a first epitaxial region made of a second semiconductor material, which overlies the substrate and defines a first surface; a second epitaxial region... Agent: Stmicroelectronics S.r.l.

20120056199 - Self-supporting cvd diamond film and method for producing a self-supporting cvd diamond film: The invention relates to a self-supporting CVD diamond film comprising a plurality of diamond layers (8) lying one over the other, wherein a lower side of each diamond layer (8) is made of diamond having a first average crystal size of 2 to 50 nm, wherein the average crystal size... Agent: Friedrich-alexander-universitaet Erlangen-nuernberg

20120056195 - Semiconductor device: One embodiment of a semiconductor device includes: a silicon carbide substrate including first and second principal surfaces; a first-conductive-type silicon carbide layer on the first principal surface; a second-conductive-type first silicon carbide region at a surface of the first silicon carbide layer; a first-conductive-type second silicon carbide region at the... Agent: Kabushiki Kaisha Toshiba

20120056202 - Semiconductor device: A MOSFET, which is a semiconductor device allowing for reduced on-resistance while restraining stacking faults from being produced due to heat treatment in a device manufacturing process, includes: a silicon carbide substrate; an active layer made of single-crystal silicon carbide and disposed on one main surface of the silicon carbide... Agent: Sumitomo Electric Industries, Ltd.

20120056203 - Semiconductor device: A JFET, which is a semiconductor device allowing for reduced manufacturing cost, includes: a silicon carbide substrate; an active layer made of single-crystal silicon carbide and disposed on one main surface of the silicon carbide substrate; a source electrode disposed on the active layer; and a drain electrode formed on... Agent: Sumitomo Electric Industries, Ltd.

20120056196 - Semiconductor device and manufacturing method thereof: A semiconductor device according to an embodiment includes a first-conductive-type semiconductor substrate; a first-conductive-type first semiconductor layer formed on the semiconductor substrate, and having an impurity concentration lower than that of the semiconductor substrate; a second-conductive-type second semiconductor layer epitaxially formed on the first semiconductor layer; and a second-conductive-type third... Agent: Kabushiki Kaisha Toshiba

20120056198 - Semiconductor device and method for fabricating the same: A semiconductor device according to an embodiment includes a semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a first semiconductor region of a second conductivity type, a second semiconductor region of the second conductivity type, a first electrode and a second electrode.... Agent: Kabushiki Kaisha Toshiba

20120056197 - Semiconductor rectifying device: A wide bandgap semiconductor rectifying device of an embodiment includes a first-conductive-type wide bandgap semiconductor substrate and a first-conductive-type semiconductor layer that has an impurity concentration lower than that of the substrate. The device also includes a first-conductive-type first semiconductor region, and a second-conductive-type second semiconductor region that is formed... Agent: Kabushiki Kaisha Toshiba

20120056204 - Light emitting device and manufacturing method thereof: A light emitting device which includes a first TFT, a second TFT, a first pixel electrode, a second pixel electrode, an organic compound layer, a first opposing electrode and a second opposing electrode. The organic compound layer is formed on the first pixel electrode and the second pixel electrode. The... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120056205 - Origami sensor: l

20120056215 - Led package having an array of light emitting cells coupled in series: Disclosed is a light emitting diode (LED) package having an array of light emitting cells coupled in series. The LED package comprises a package body and an LED chip mounted on the package body. The LED chip has an array of light emitting cells coupled in series. Since the LED... Agent: Seoul Semiconductor Co., Ltd.

20120056210 - Light emitting apparatus and multi-surface pattern substrate: A light emitting apparatus capable of increasing the number of substrates formed from one multi-surface pattern substrate and capable of reducing the manufacturing cost. The light emitting apparatus (100) includes a belt-like substrate (101), a light emitting element (102) mounted on the substrate (101), and a luminous flux control member... Agent:

20120056209 - Light emitting device: A light emitting device according to one embodiment includes a board; plural first light emitting elements mounted on the board to emit light having a wavelength of 250 nm to 500 nm; plural second light emitting elements mounted on the board to emit light having a wavelength of 250 nm... Agent: Kabushiki Kaisha Toshiba

20120056214 - Light emitting device and manufacturing method thereof: A light emitting device of the invention includes a thin film transistor, an insulating layer covering the thin film transistor, an electrode which is electrically connected to the thin film transistor through a contact hole formed on the insulating layer, and a light emitting element formed by interposing a light... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120056212 - Light-emitting device and the manufacturing method thereof: A light-emitting device includes: a carrier; a light-emitting structure formed on the carrier, wherein the light-emitting structure has a first surface facing the carrier, a second surface opposite to the first surface, and an active layer between the first surface and the second surface; a plurality of first trenches extended... Agent: Epistar Corporation

20120056213 - Light-emitting element, light-emitting device, display device, and electronic apparatus: A light-emitting element includes: an anode; a cathode; a light-emitting layer which is provided between the anode and the cathode and emits light as the anode and the cathode are electrically connected to each other; and an organic layer which is provided between the anode and the light-emitting layer to... Agent: Seiko Epson Corporation

20120056207 - Pixel array: A pixel array includes pixel sets. Each pixel set includes a first and second scan lines arranged in parallel on a substrate, a data line not parallel to the first and second scan lines, a first active device electrically connecting the first scan line and the data line, a second... Agent: Au Optronics Corporation

20120056211 - Polarizing film, optical film laminate including polarizing film, stretched laminate for use in production of optical film laminate including polarizing film, production methods for them, and organic el display device having polarizing film: Provided is a continuous web of polarizing film for an organic EL display device which has a thickness of 10 μm or less and exhibits high optical characteristics. The polarizing film for an organic EL display device is made of a polyvinyl alcohol type resin having a molecularly oriented dichroic... Agent: Nitto Denko Corporation

20120056206 - Solid state lighting dies with quantum emitters and associated methods of manufacturing: Solid state lighting dies and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting die includes a substrate material, a first semiconductor material, a second semiconductor material, and an active region between the first and second semiconductor materials. The second semiconductor material has a surface... Agent: Micron Technology, Inc.

20120056208 - System for displaying images: A system for displaying images includes an organic light-emitting device (OLED) including an anode layer on a substrate, a cathode layer, and an organic light-emitting layer disposed between the anode and cathode layers. The cathode layer includes a metal layer in direct contact with the organic light-emitting layer, a transparent... Agent: Chimei Innolux Corporation

20120056216 - Light emitting device: A light emitting device according to one embodiment includes: a board; plural first light emitting units each including a first light emitting element and a first fluorescent layer formed on the first light emitting element having a green phosphor; plural second light emitting units each including a second light emitting... Agent: Kabushiki Kaisha Toshiba

20120056217 - Light emitting diode package: Disclosed herein is a light emitting diode package including a package body having a cavity, a light emitting diode chip having a plurality of light emitting cells connected in series to one another, a phosphor converting a frequency of light emitted from the light emitting diode chip, and a pair... Agent: Seoul Semiconductor Co., Ltd.

20120056218 - Lead frame package with multiple bends: A lead frame package with multiple bends suitable for a light-emitting device, as well as a non-optical device is disclosed. A light-emitting device incorporating the lead frame package with multiple bends may comprise a light source die, a body and a plurality of leads. A non-optical device incorporating the lead... Agent:

20120056219 - Back-to-back solid state lighting devices and associated methods: Solid state lights (SSLs) including a back-to-back solid state emitters (SSEs) and associated methods are disclosed herein. In various embodiments, an SSL can include a carrier substrate having a first surface and a second surface different from the first surface. First and second through substrate interconnects (TSIs) can extend from... Agent: Micron Technology, Inc.

20120056220 - Semiconductor light emmiting device: According to one embodiment, in a light emitting device, a substrate is transparent to a wavelength of emitted light. A first dielectric layer is formed in a first region on the substrate, and has a refractive index smaller than a refractive index of the substrate. A second dielectric layer is... Agent: Kabushiki Kaisha Toshiba

20120056226 - Chip package: An embodiment of the invention provides a chip package which includes: a substrate having a first surface and a second surface; an optoelectronic device disposed at the first surface; a protection layer disposed on the second surface of the substrate, wherein the protection layer has an opening; a conducting bump... Agent:

20120056231 - Electroluminescent device: The invention relates to an electroluminescent device (10) comprising a layer system with a substrate (40) and on top of the substrate (40) a substrate electrode (20), a counter electrode (30) and an electroluminescent layer stack with at least one organic electroluminescent layer (50) arranged between the substrate electrode (20)... Agent: Koninklijke Philips Electronics N.v.

20120056228 - Led chip modules, method for packaging the led chip modules, and moving fixture thereof: A method for packaging LED chip modules is provided. First, a first sacrificial layer is disposed on a substrate. Afterwards, LED chips are synchronously disposed on the first sacrificial layer before the first sacrificial layer cures. Next, a first material, a second sacrificial layer, and a second material are used... Agent: National Cheng Kung University

20120056223 - Led package structure and packaging method thereof: A LED package structure includes a supporting substrate, a first electrically-conductive structure, a LED chip, an insulating layer and a second electrically-conductive structure. The supporting substrate includes a top surface, a bottom surface and a first channel. The first electrically-conductive structure is filled in the first channel and partially formed... Agent: Delta Electronics, Inc.

20120056224 - Light emitting device: A light emitting device according to one embodiment includes a light emitting element that emits light having a wavelength of 380 nm to 470 nm; a CASN first red phosphor that is disposed on the light emitting element; a sialon second red phosphor that is disposed on the light emitting... Agent: Kabushiki Kaisha Toshiba

20120056225 - Light emitting device: l

20120056230 - Light emitting device: A light emitting device according to the embodiment includes a first conductive semiconductor layer; an active layer under the first conductive semiconductor layer; a second conductive semiconductor layer under the active layer; a current blocking region under the second conductive semiconductor layer; a second electrode layer under the second conductive... Agent:

20120056227 - Light emitting diode package and manufacturing method thereof: A light emitting diode (LED) package is disclosed. The LED package includes a lead frame comprising a thermal pad and at least two electrode pads disposed at a distance from the thermal pad; at least one LED mounted on the thermal pad and electrically connected with the at least two... Agent:

20120056221 - Light emitting element: The present invention provides a light emitting element, which includes a light emitting diode (LED) chip and a wavelength-converting layer arranged on a surface of the LED chip, the wavelength-converting layer to convert a wavelength of light emitted from the LED chip, wherein at least a portion of the wavelength-converting... Agent: Seoul Opto Device Co., Ltd.

20120056229 - Light emitting structure and manufacturing method thereof: A light-emitting structure comprises a semiconductor light-emitting element which includes a first connection point and a second connection point. The light-emitting structure further includes a first electrode electrically connected to the first connection point, and a second electrode electrically connected the second connection point. The first electrode and the second... Agent: Epistar Corporation

20120056222 - Semiconductor light emitting device and method for manufacturing same: A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a light emitting layer, a first electrode layer, and a second electrode layer. The light emitting layer is between the first semiconductor layer and the second... Agent: Kabushiki Kaisha Toshiba

20120056234 - Heat dissipation material and light emitting diode package including a junction part made of the heat dissipation material: Disclosed are a heat dissipation material comprising a metallic glass and an organic vehicle and a light emitting diode package including at least one of a junction part, wherein the junction part includes a heat dissipation material including a metallic glass.... Agent: Samsung Electronics Co., Ltd.

20120056233 - Led package: An LED package includes a base, an LED chip and an encapsulation. The LED chip is mounted on the base. The encapsulation encapsulates the LED chip. A heat dissipating plate is sandwiched between the LED chip and the base. The heat dissipating plate includes a first surface and a second... Agent: Advanced Optoelectronic Technology, Inc.

20120056235 - Optoelectronic module and method of producing an optoelectronic module: An optoelectronic module includes a radiation-emitting semiconductor component, an electrical component and a carrier substrate. The carrier substrate includes a top and a bottom, wherein first electrical connections are arranged on the bottom and second electrical connections are arranged on the top. The electrical component is arranged on the top... Agent: Osram Opto Semiconductors Gmbh

20120056232 - Semiconductor light emitting device and method for manufacturing same: A semiconductor light emitting device includes a structural body, a first electrode layer, an intermediate layer and a second electrode layer. The structural body includes a first semiconductor layer of first conductivity type, a second semiconductor layer of second conductivity type, and a light emitting layer between the first and... Agent: Kabushiki Kaisha Toshiba

20120056236 - Low gas permeable silicone resin composition and optoelectronic device: A silicone resin composition comprising (A) an organopolysiloxane containing silicon-bonded aryl and alkenyl groups in a molecule, (B) an organohydrogenpolysiloxane, and (C) an addition reaction catalyst is low gas permeable. An optoelectronic device encapsulated therewith is highly reliable.... Agent:

20120056237 - Semiconductor compound structure and method of fabricating the same using graphene or carbon nanotubes, and semiconductor device including the semiconductor compound structure: A semiconductor compound structure and a method of fabricating the semiconductor compound structure using graphene or carbon nanotubes, and a semiconductor device including the semiconductor compound structure. The semiconductor compound structure includes a substrate; a buffer layer disposed on the substrate, and formed of a material including carbons having hexagonal... Agent: Samsung Electronics Co., Ltd.

20120056238 - Bidirectional silicon-controlled rectifier: A bidirectional silicon-controlled rectifier, wherein the conventional field oxide layer, which separates an anode structure from a cathode structure, is replaced by a field oxide layer having floating gates, a virtual gate or a virtual active region. Thus, the present invention can reduce or escape from the bird's beak effect... Agent:

20120056239 - Electrostatic discharge protection device: An electrostatic discharge protection device is coupled between a first power line and a second power line and comprises a P-type well, a first N-type doped region, a first P-type doped region, a second P-type doped region and a second N-type doped region. The first N-type doped region is formed... Agent:

20120056240 - Semiconductor device: A semiconductor device includes a baseplate and a first and a second insulated gate bipolar transistor (IGBT) substrate coupled to the baseplate. The semiconductor device includes a first and a second diode substrate coupled to the baseplate and a first, a second, and a third control substrate coupled to the... Agent: Infineon Technologies Ag

20120056241 - Semiconductor device and method of manufacturing the same: A semiconductor device includes a drift layer, a base layer on the drift layer, and trench gate structures. Each trench gate structure includes a trench reaching the drift layer by penetrating the base layer, a gate insulation layer on a wall surface of the trench, and a gate electrode on... Agent: Denso Corporation

20120056242 - Semiconductor device including insulated gate bipolar transistor and diode: A semiconductor device includes a vertical IGBT and a vertical free-wheeling diode in a semiconductor substrate. A plurality of base regions is disposed at a first-surface side portion of the semiconductor substrate, and a plurality of collector regions and a plurality of cathode regions are alternately disposed in a second-surface... Agent: Denso Corporation

20120056243 - Photodetector and method for manufacturing photodetector: A photodetector 1 according to an embodiment of the present invention includes: an n-type InAs substrate 12; an n-type InAs buffer layer 14 formed on the n-type InAs substrate 12; an n-type InAs light absorbing layer 16 formed on the n-type InAs buffer layer 14; an InAsXPYSb1-X-Y cap layer 18... Agent: Hamamatsu Photonics K.k.,

20120056244 - Growth of multi-layer group iii-nitride buffers on large-area silicon substrates and other substrates: A method includes forming a first epitaxial layer over a semiconductor substrate and etching the first epitaxial layer to form multiple separated first epitaxial regions. The method also includes forming a second epitaxial layer over the etched first epitaxial layer. Each epitaxial layer includes at least one Group III-nitride, and... Agent: National Semiconductor Corporation

20120056246 - Insulated gate field effect transistors: An improved insulated gate field effect device is obtained by providing a substrate desirably comprising a III-V semiconductor, having a further semiconductor layer on the substrate adapted to contain the channel of the device between spaced apart source-drain electrodes formed on the semiconductor layer. A dielectric layer is formed on... Agent: Freescale Semiconductor, Inc.

20120056245 - Semiconductor devices including silicide regions and methods of fabricating the same: A semiconductor device includes a semiconductor substrate, a gate electrode structure including a gate electrode located on an active region of the semiconductor substrate, first and second epitaxial regions located in the active region at opposite sides of the gate electrode structure, and first and second silicide layers on upper... Agent: Samsung Electronics Co., Ltd.

20120056247 - Pseudo buried layer and manufacturing method of the same, deep hole contact and bipolar transistor: The present invention discloses a pseudo buried layer, a deep hole contact and a bipolar transistor, and also discloses a manufacturing method of a pseudo buried layer, including: etching a silicon substrate to form an active region and shallow trenches; sequentially implanting phosphorous ion and arsenic ion into the bottom... Agent:

20120056248 - One-transistor pixel array: To reduce the pixel size to the smallest dimensions and simplest form of operation, a pixel may be formed by using only one ion sensitive field-effect transistor (ISFET). This one-transistor, or 1T, pixel can provide gain by converting the drain current to voltage in the column. Configurable pixels can be... Agent: Life Technologies Corporation

20120056250 - Dynamic schottky barrier mosfet device and method of manufacture: A device for regulating a flow of electric current and its manufacturing method are provided. The device includes metal-insulator-semiconductor source-drain contacts forming Schottky barrier or Schottky-like junctions to the semiconductor substrate. The device includes an interfacial layer between the semiconductor substrate and a metal source and/or drain electrode, thereby dynamically... Agent: Avolare 2, LLC

20120056249 - Interlayer for electronic devices: Embodiments in accordance with the present invention provide for the use of polycycloolefins in electronic devices and more specifically to the use of such polycycloolefins as interlayers applied to fluoropolymer layers used in the fabrication of electronic devices, the electronic devices that encompass such polycycloolefin interlayers and processes for preparing... Agent: Merck Patent Gmbh

20120056252 - Electronic device: An object is to provide a pixel structure of a display device including a photosensor which prevents changes in an output of the photosensor and a decrease in imaging quality. The display device has a pixel layout structure in which a shielding wire is disposed between an FD and an... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120056251 - Semiconductor integrated circuit, electronic device, solid-state imaging apparatus, and imaging apparatus: A semiconductor integrated circuit includes a first semiconductor substrate in which a part of an analog circuit is formed between the analog circuit and a digital circuit which subjects an analog output signal output from the analog circuit to digital conversion; a second semiconductor substrate in which the remaining part... Agent: Sony Corporation

20120056253 - Semiconductor memory device and manufacturing method thereof: A semiconductor memory device according to the present embodiment includes a semiconductor substrate, a select transistor, a lower electrode, a magnetic tunnel junction element, a first protection film, an upper electrode, and a second protection film. The select transistor is formed on the semiconductor substrate. The lower electrode is electrically... Agent: Kabushiki Kaisha Toshiba

20120056254 - Spin injection electrode structure, spin transport element, and spin transport device: The present invention provides a spin injection electrode structure, a spin transport element, and a spin transport device which enable effective spin injection in a silicon channel layer at room temperature. A spin injection electrode structure IE comprises a silicon channel layer 12, a first magnesium oxide film 13A disposed... Agent: Tdk Corporation

20120056256 - Semiconductor device and method for forming the same: A semiconductor device includes a first semiconductor pillar, a second semiconductor pillar, and a first wiring. The first semiconductor pillar includes a first diffusion region. The second semiconductor pillar is adjacent to the first semiconductor pillar. The first wiring is positioned between the first and second semiconductor pillars. The first... Agent: Elpida Memory, Inc.

20120056255 - Semiconductor device and method of fabricating the same: A semiconductor device includes a device formation region including a plurality of unit regions arranged in series to each other, each unit region comprising first and second active regions alternately arranged in series to each other. The first active region extends in a first direction. The second active region extends... Agent: Elpida Memory, Inc.

20120056257 - Non-volatile memory system with modified memory cells: A method and system in which an embedded memory is fabricated in accordance with a conventional logic process includes one or more non-volatile memory cells, each having an access transistor and a capacitor, which share a common floating gate electrode. The coupling capacitor is provided with a dielectric layer having... Agent: Mosys, Inc.

20120056258 - Electrical switch using gated resistor structures and three-dimensional integrated circuits using the same: An electrical switch using a gated resistor structure includes an isolation layer, a doped silicon layer arranged on the isolation layer and having a recessed portion with reduced thickness, the doped silicon layer having a predetermined doping type and a predetermined doping profile; a gate layer arranged corresponding to the... Agent:

20120056259 - Memory cell, memory device and method for manufacturing memory cell: A memory cell including a substrate, a stacked gate structure and a first isolation structure is provided. The substrate has a first doped region, a second doped and a channel region located between the first doped region and the second doped region. The stacked gate structure is disposed on the... Agent: Macronix International Co., Ltd.

20120056260 - Method and device employing polysilicon scaling: A memory and method of manufacture employing word line scaling. A layered stack, including a charge trapping component and a core polysilicon layer, is formed on a core section and a peripheral section of a substrate. A portion of the layered stack, including the core polysilicon layer is then removed... Agent: Spansion LLC

20120056261 - Bi-directional, reverse blocking battery switch: Embodiments of the present invention relate to an improved package for a bi-directional and reverse blocking battery switch. According to one embodiment, two switches are oriented side-by-side, rather than end-to-end, in a die package. This configuration reduces the total switch resistance for a given die area, often reducing the resistance... Agent: Gem Services, Inc.

20120056262 - Semiconductor device: According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a third semiconductor layer of the first conductivity type, an embedded electrode, a control electrode, a fourth semiconductor layer of the second conductivity type,... Agent: Kabushiki Kaisha Toshiba

20120056263 - Semiconductor trench isolation including polysilicon and nitride layers: A semiconductor device includes a device isolation pattern in which a polysilicon layer pattern doped with oxygen, carbon or nitrogen is interposed between an inner wall of a trench and a nitride liner. The semiconductor device includes a semiconductor substrate including a trench, a polysilicon layer pattern on a surface... Agent: Samsung Electronics Co., Ltd.

20120056264 - Method for forming and structure of a recessed source/drain strap for a mugfet: A method and semiconductor structure includes an insulator layer on a substrate, a plurality of parallel fins above the insulator layer, relative to a bottom of the structure. Each of the fins comprises a central semiconductor portion and conductive end portions. At least one conductive strap may be positioned within... Agent: International Business Machines Corporation

20120056265 - Seminconductor device and fabrications thereof: A semiconductor device is disclosed, including a substrate, a fin type semiconductor layer disposed on the substrate, a gate dielectric layer disposed on a top and sidewalls of the fin type semiconductor layer, a metal nitride layer disposed on the gate dielectric layer, and an aluminum doped metal nitride layer... Agent: Nanya Technology Corporation

20120056266 - Semiconductor device and manufacturing method thereof: A semiconductor device includes a plurality of gate insulating films formed on a semiconductor substrate. Of the plurality of gate insulating films, the gate insulating film having a smallest thickness in an HP transistor formation region is a silicon oxide film, and each of the remaining gate insulating films in... Agent: Panasonic Corporation

20120056267 - Hybrid channel semiconductor device and method for forming the same: A hybrid channel semiconductor device and a method for forming the same are provided. The method includes: providing a first semiconductor layer, the first semiconductor layer including an NMOS area and a PMOS area, a surface of the first semiconductor layer being covered by a second semiconductor layer, wherein electrons... Agent: Institute Of Microelectronics, Chinese Academy Of Sciences

20120056269 - Novel device scheme of hmkg gate-last process: The present disclosure provides a method for making metal gate stacks of a semiconductor device. The method includes forming a high k dielectric material layer on a semiconductor substrate; forming a conductive material layer on the high k dielectric material layer; forming a dummy gate in a n-type field-effect transistor... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120056268 - Semiconductor device and manufacturing method thereof: There is provided a technology capable of achieving, in a semiconductor device having a MISFET using an insulating film containing hafnium as a gate insulating film, an improvement in the reliability of a MISFET. In the present invention, the gate insulating film of an n-channel core transistor is provided with... Agent: Renesas Electronics Corporation

20120056270 - Semiconductor device and method for fabricating the same: A semiconductor device includes an NMIS transistor including a first gate insulating film containing a high-k dielectric and a first gate electrode provided on the first gate insulating film and containing a metal material and a PMIS transistor including a second gate insulating film containing a high-k dielectric and a... Agent: Panasonic Corporation

20120056271 - Semiconductor device: A semiconductor device includes a first, second, and third MIS transistors of a first conductivity type respectively including a first, second, and third gate electrodes on a first, second, and third active regions of a semiconductor substrate with a first, second, and third gate insulating films interposed therebetween. The first... Agent: Panasonic Corporation

20120056272 - Semiconductor device: A semiconductor device includes a first transistor having a first conductivity type; and a second transistor having the first conductivity type and having a higher threshold voltage than the first transistor. The first transistor includes a first channel region having a second conductivity type, a first gate insulating film, a... Agent: Panasonic Corporation

20120056273 - Semiconductor device and method of manufacturing the same: A semiconductor device includes: a first transistor formed on a semiconductor substrate; and a second transistor formed above the semiconductor substrate with an insulation film interposed therebetween. The first transistor includes a first body region formed on a surface of the semiconductor substrate, and a first source region and a... Agent: Sony Corporation

20120056274 - Semiconductor device: A semiconductor device of the present invention includes: transistor Tr1 arranged on a semiconductor substrate; transistor Tr2 arranged such that a carrier drift direction thereof viewed on the semiconductor substrate is identical to a carrier drift direction of transistor Tr1; diffusion layer 51c connecting diffusion layers 51a and 51b on... Agent: Elpida Memory, Inc.

20120056275 - High performance low power bulk fet device and method of manufacture: A method of forming a semiconductor device includes: forming a channel of a field effect transistor (FET) in a substrate; forming a heavily doped region in the substrate; and forming recesses adjacent the channel and the heavily doped region. The method also includes: forming an undoped or lightly doped intermediate... Agent: International Business Machines Corporation

20120056277 - Semiconductor device integrated with converter and package structure thereof: The present invention provides a semiconductor device including a semiconductor substrate having a first conductive type, at least one high-side transistor device and at least one low-side transistor device. The high-side transistor device includes a doped high-side base region having a second conductive type, a doped high-side source region having... Agent:

20120056276 - Strained asymmetric source/drain: The present disclosure provides a semiconductor device and methods of making wherein the semiconductor device has strained asymmetric source and drain regions. A method of fabricating the semiconductor device includes providing a substrate and forming a poly gate stack on the substrate. A dopant is implanted in the substrate at... Agent: Taiwan Semiconductor Manufacturing Company, Ltd., ("tsmc")

20120056278 - Method for manufacturing contacts for a semiconductor device, and semiconductor device having such contacts: A manufacturing method for contacts for a semiconductor device and a semiconductor device having said contacts, said method forms contact structures whose lower part consists of a plurality of contact holes and whose upper part consists of a trench contact, said contact holes having relatively smaller diameters, and the trench... Agent:

20120056281 - High aspect ratio capacitively coupled mems devices: A method that includes forming an opening between at least one first electrode and a second electrode by forming a recess in a first electrode layer, the recess having sidewalls that correspond to a surface of the at least one first electrode, forming a first sacrificial layer on the sidewalls... Agent: Stmicroelectronics, Inc.

20120056280 - Mems sensor package: A MEMS sensor package includes a support and a MEMS sensor chip having a mounting side adhered on the support by a point-shaped adhesive or a linear-shaped adhesive in such a way that the MEMS sensor chip has a free side opposite to the mounting and suspended above the support.... Agent:

20120056279 - Package structure having mems element and fabrication method thereof: A package structure having an MEMS element includes: a packaging substrate having first and second wiring layers on two surfaces thereof and a chip embedded therein; a first dielectric layer disposed on the packaging substrate and the chip; a third wiring layer disposed on the first dielectric layer; a second... Agent: Siliconware Precision Industries Co., Ltd.

20120056282 - Mems transducer for an audio device: A MEMS transducer (10) for an audio device comprises a substrate (12), a membrane (14) attached to the substrate (12), and a back-electrode (18) attached to the substrate (12), wherein a resonant frequency of the back-electrode (18) is matched to a resonant frequency of the membrane (14). Further, a method... Agent: Knowles Electronics Asia Pte. Ltd.

20120056283 - Memory element and memory device: There is disclosed a memory element including a memory layer that has a magnetization perpendicular to a film face and a magnetization direction thereof varies corresponding to information; a magnetization-fixed layer that has a magnetization that is perpendicular to the film face and becomes a reference for the information stored... Agent: Sony Corporation

20120056284 - Memory element and memory device: There is disclosed a memory element which includes a layered structure. The layered structure includes a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer having magnetization perpendicular to the film face; an insulating layer provided between the memory layer and the magnetization-fixed layer; and... Agent: Sony Corporation

20120056285 - Memory element and memory device: There is provided a memory element including a memory layer that has magnetization perpendicular to a film face; a magnetization-fixed layer that has magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein an electron that... Agent: Sony Corporation

20120056286 - Memory element and memory device: There is disclosed a memory element including a layered structure including a memory layer that has magnetization perpendicular to a film face and a magnetization direction thereof varies corresponding to information; a magnetization-fixed layer that has magnetization that is perpendicular to the film face; and an insulating layer that is... Agent: Sony Corporation

20120056287 - Dispositif de detection de rayonnement et procede de fabrication: A method for manufacturing an ionizing radiation detection device having a block of a semiconductor material adapted to undergo local separations of charges between positive and negative charges under the effect of ionizing radiation. The device including a first series of at least two collecting electrodes formed on the surface... Agent: Commissariat A L'energie Atomique Et Aux Energies Alternatives

20120056289 - Materials, systems and methods for optoelectronic devices: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically... Agent: Invisage Technologies, Inc.

20120056288 - Semiconductor device, manufacturing method therefor, and electronic apparatus: A semiconductor device includes: a first semiconductor chip; and a second semiconductor chip that is stacked on the first semiconductor chip. The first semiconductor chip includes a first wiring portion of which a side surface is exposed at a side portion of the first semiconductor chip. The second semiconductor chip... Agent: Sony Corporation

20120056291 - Imaging device, imaging module and method for manufacturing imaging device: According to one embodiment, an imaging device includes a substrate, a photodetecting portion, a circuit portion and a through interconnect. The substrate has a first major surface, a second major surface on a side opposite to the first major surface, a recess portion provided on the first major surface and... Agent: Kabushiki Kaisha Toshiba

20120056293 - Semiconductor optical element: A semiconductor optical element has an active layer including quantum dots. The density of quantum dots in the resonator direction in a portion of the active layer in which the density of photons is relatively high is increased relative to the density of quantum dots in a portion of the... Agent: Mitsubishi Electric Corporation

20120056292 - Semiconductor package and manufacturing method for a semiconductor package as well as optical module: A semiconductor package includes: a supporting substrate; a functioning element and a first joining element formed on a first principal surface of the supporting substrate; a sealing substrate disposed in an opposing relationship to the supporting substrate with the functioning element and the first joining element interposed therebetween; a second... Agent: Sony Corporation

20120056290 - Thin-film solar fabrication process, deposition method for solar cell precursor layer stack, and solar cell precursor layer stack: A method of manufacturing a layer stack adapted for a thin-film solar cell and a precursor for a solar cell are described. The method includes depositing a TCO layer over a transparent substrate, depositing a first conductive-type layer, wherein the depositing includes: providing for a first SiOx-containing anti-reflection layer by... Agent: Applied Materials, Inc.

20120056294 - Schottky diodes with dual guard ring regions and associated methods: The present invention discloses a Schottky diode. The Schottky diode comprises a cathode region, an anode region and a guard ring region. The anode region may comprise a metal Schottky contact. The guard ring region may comprise an outer guard ring and a plurality of inner guard stripes inside the... Agent:

20120056295 - Semiconductor device and fabrication method thereof: A method for fabricating a semiconductor device is provided. A substrate comprising a P-well is provided. A low voltage device area and a high voltage device area are defined in the P-well. A photoresist layer is formed on the substrate. A photomask comprising a shielding region is provided. The shielding... Agent: Vanguard International Semiconductor Corporation

20120056296 - Semiconductor device and method of blowing fuse thereof: A semiconductor device comprises an active region including a core circuit forming region and a buffer forming region, and a fuse element forming region arranged on a corner of the active region and to be able to be electrically fused. It is possible to arrange the fuse element without forming... Agent: Renesas Electronics Corporation

20120056297 - Baluns for rf signal conversion and impedance matching: A magnetically-coupled structure is integrated with an integrated circuit in back end-of-line (BEOL) digital CMOS fabrication processes. A differential primary (or secondary) coil is formed by patterning a thick copper (Cu) metal layer, and a single-ended secondary (or primary) coil is formed by patterning a thick aluminum (Al) top metal... Agent: Texas Instruments Incorporated

20120056299 - Integrated capacitor comprising an electrically insulating layer made of an amorphous perovskite-type material and manufacturing process: An integrated capacitor comprises a layer of dielectric material known as functional dielectric material based on crystallized material of perovskite type, between at least one first electrode known as a bottom electrode at the surface of a substrate and at least one second electrode known as a top electrode, said... Agent: Commissariat A L'energie Atomique Et Aux Energies Alternatives

20120056298 - Semiconductor device: A semiconductor device includes a first power supply terminal, a second power supply terminal, and first and second capacitors. The first power supply terminal is configured to be supplied with a first electrical potential. The second power supply terminal is configured to be supplied with a second electrical potential. The... Agent: Elpida Memory, Inc.

20120056300 - Semiconductor device and fabricating method of the same: Openings are formed by lithography and subsequent dry etching at the portions of a first protective film which correspond to connecting holes of second plugs which will be described later, namely at the portions thereof which align with first plugs, wherein the openings have a diameter greater than that of... Agent: Fujitsu Semiconductor Limited

20120056302 - Semiconductor device and method of manufacturing same: A technique for enhancing the performance of a memory- and logic-equipped semiconductor device is provided. The semiconductor device comprises a semiconductor substrate, and insulating layer on the semiconductor substrate, a plurality of contact plugs in the insulating layer, and an insulating layer where capacitors, a plurality of contact plugs, barrier... Agent: Renesas Electronics Corporation

20120056301 - Stack capacitor of memory device and fabrication method thereof: The invention provides a method for forming a stack capacitor of a memory device, including providing a substrate, forming a patterned sacrificial layer with a plurality of first openings over the substrate, conformally forming a first conductive layer on the patterned sacrificial layer and in the first openings, forming a... Agent: Nanya Technology Corporation

20120056303 - Resistor array and semiconductor device including the same: A resistor array includes a semiconductor substrate, a plurality of isolation regions, a plurality of dummy active regions and a plurality of unit resistors. The plurality of isolation regions are formed in the semiconductor substrate. The plurality of dummy active regions are formed in the semiconductor substrate between the plurality... Agent: Samsung Electronics Co., Ltd.

20120056304 - Wafer, fabricating method of the same, and semiconductor substrate: A wafer, a fabricating method of the same, and a semiconductor substrate are provided. The wafer includes a first substrate layer formed at a first surface, a second substrate layer formed at a second surface opposite to the first surface, the second substrate layer having a greater oxygen concentration than... Agent: Samsung Electronics Co., Ltd.

20120056305 - Spacer structure for transistor device and method of manufacturing same: The present disclosure provides a bipolar junction transistor (BJT) device and methods for manufacturing the BJT device. In an embodiment, the BJT device includes: a semiconductor substrate having a collector region, and a material layer disposed over the semiconductor layer. The material layer has a trench therein that exposes a... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120056307 - Epitaxial silicon wafer and production method thereof: Provided is an epitaxial silicon wafer in which the warping is reduced by rendering a cross-sectional form of a silicon wafer for epitaxial growth into an adequate form as compared with the conventional one. An epitaxial silicon wafer comprising a silicon wafer for epitaxial growth and an epitaxial layer is... Agent: Sumco Corporation

20120056308 - Method of forming an electromechanical transducer device: A method of forming an electromechanical transducer device comprises forming on a fixed structure a movable structure and an actuating structure of the electromechanical transducer device, wherein the movable structure is arranged in operation of the electromechanical transducer device to be movable in relation to the fixed structure in response... Agent: Freescale Semiconductor, Inc.

20120056306 - Multi-stack semiconductor device: A multi-stack semiconductor device comprises: a substrate; a first conductive layer, a first group of the semiconductor material layers and a second group of the semiconductor material layers. The first conductive layer is formed on the substrate scribed by laser on the bottom of the first conductive layer to form... Agent: Sun Well Solar Corporation

20120056310 - Semiconductor device and method for increasing semiconductor device effective operation aera: A method for increasing semiconductor device effective operation area, comprising following steps: depositing first conductive layer on the substrate; using laser for scribing a plurality of the first scribe lines on the first conductive layer, where the scribe lines are scribed on the bottom of the first conductive layer; depositing... Agent: Sun Well Solar Corporation

20120056309 - Semiconductor device with reduced heat-induced loss: A semiconductor device which is capable of reducing a heat-induced loss includes a substrate and a circuit element disposed on the substrate. The substrate is of a rectangular shape with beveled surfaces on four corners thereof.... Agent: Disco Corporation

20120056311 - Leadframe for semiconductor device: A lead frame for a semiconductor device has a die pad with a first major surface for receiving an semiconductor die and a connection bar that encircles the die pad. First lead fingers that project from the connection bar towards the die pad have proximal ends close to the die... Agent: Freescale Semiconductor, Inc

20120056312 - Semiconductor device and method of forming tsv semiconductor wafer with embedded semiconductor die: A semiconductor device has a TSV semiconductor wafer with a cavity formed in a first surface of the wafer. A second cavity can be formed in a second surface of the wafer. A plurality of semiconductor die is mounted within the cavities. The semiconductor die can be mounted side-by-side and/or... Agent: Stats Chippac, Ltd.

20120056313 - Semiconductor package: A semiconductor package includes a radiator plate including a stress alleviation section, a resin sheet arranged on the radiator plate, a pair of bus bars joined to the radiator plate through the resin sheet at positions at which the stress alleviation section is interposed between the bus bars, and a... Agent:

20120056314 - Semiconductor device and method of forming base leads from base substrate as standoff for stacking semiconductor die: A semiconductor device has a base substrate with first and second opposing surfaces. A first etch-resistant conductive layer is formed over the first surface of the base substrate. A second etch-resistant conductive layer is formed over the second surface of the base substrate. A first semiconductor die has bumps formed... Agent: Stats Chippac, Ltd.

20120056315 - Alignment marks in substrate having through-substrate via (tsv): A device includes a substrate, and an alignment mark including a conductive through-substrate via (TSV) penetrating through the substrate.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120056317 - Chip: A chip includes a body, a number of pins, and conductive pieces. The body includes a top surface and a bottom surface. The pins are arranged on the bottom surface. The conductive pieces are arranged on the top surface. The number of the conductive pieces equals to the number of... Agent: Hon Hai Precision Industry Co., Ltd.

20120056319 - Embedded package and method for manufacturing the same: An embedded package includes a first semiconductor chip having a first conductive line which has a first sunken area, a second semiconductor chip having a second conductive line which has a second sunken area, wherein the first semiconductor chip and the second semiconductor chip are arranged facing each other, and... Agent: Hynix Semiconductor Inc.

20120056318 - Semiconductor device: According to one embodiment, there is provided a semiconductor device including a semiconductor element, an electrode pad of the semiconductor element, a buffer coat film, and a micro-bump. The buffer coat film has an opening corresponding to the electrode pad. The micro-bump is electrically connected to the electrode pad through... Agent:

20120056320 - Semiconductor device and manufacturing method of semiconductor device: According to one embodiment, a semiconductor substrate, a metal film, a surface modifying layer, and a redistribution trace are provided. On the semiconductor substrate, a wire and a pad electrode are formed. The metal film is formed over the semiconductor substrate. The surface modifying layer is formed on a surface... Agent: Kabushiki Kaisha Toshiba

20120056316 - Semiconductor device and method of forming different height conductive pillars to electrically interconnect stacked laterally offset semiconductor die: A semiconductor device has a first semiconductor die mounted over a carrier. Wettable contact pads can be formed over the carrier. A second semiconductor die is mounted over the first semiconductor die. The second die is laterally offset with respect to the first die. An electrical interconnect is formed between... Agent: Stats Chippac, Ltd.

20120056321 - Semiconductor device and method of forming wlp with semiconductor die embedded within penetrable encapsulant between tsv interposers: A semiconductor device has a first substrate with a plurality of first conductive vias formed partially through the first substrate. A first semiconductor die is mounted over the first substrate and electrically connected to the first conductive vias. A plurality of bumps is formed over the first substrate. A second... Agent: Stats Chippac, Ltd.

20120056322 - Semiconductor device with pads of enhanced moisture blocking ability: A semiconductor device is provided having a pad with an improved moisture blocking ability. The semiconductor device has: a circuit portion including a plurality of semiconductor elements formed on a semiconductor substrate; lamination of insulator covering the circuit portion, including a passivation film as an uppermost layer having openings; ferro-electric... Agent: Fujitsu Semiconductor Limited

20120056325 - Methods of fabricating electronic devices using direct copper plating: The present invention relates to methods and structures for the metallization of semiconductor devices. One aspect of the present invention is a method of forming a semiconductor device having copper metallization. In one embodiment, the method includes providing a patterned wafer having a diffusion barrier for copper; depositing a copperless... Agent:

20120056323 - Semiconductor structure and method for manufacturing the same: The application discloses a semiconductor structure and a method for manufacturing the same. The semiconductor structure comprises: a semiconductor substrate comprising a first surface and a second surface opposite to each other; and a silicon via formed through the semiconductor substrate, wherein the silicon via comprises a first via formed... Agent: Institute Of Microelectronics, Chinese Academy Of Sciences

20120056324 - Substrate for a microelectronic package and method of fabricating thereof: Substrates having molded dielectric layers and methods of fabricating such substrates are disclosed. The substrates may advantageously be used in microelectronic assemblies having high routing density.... Agent: Tessera, Inc.

20120056326 - Titanium nitride films: The use of a monolayer or partial monolayer sequencing process to form conductive titanium nitride produces a reliable structure for use in a variety of electronic devices. In an embodiment, a structure can be formed by using ammonia and carbon monoxide reactant materials with respect to a titanium-containing precursor exposed... Agent:

20120056327 - Ramp-stack chip package with static bends: A ramp-stack chip package is described. This chip package includes a vertical stack of semiconductor dies or chips that are offset from each other in a horizontal direction, thereby defining a terrace with exposed pads. A high-bandwidth ramp component, which is positioned approximately parallel to the terrace, is electrically and... Agent: Oracle International Corporation

20120056332 - Compliant printed circuit wafer level semiconductor package: A wafer-level package for semiconductor devices and a method for making the package. At least one dielectric layer is selectively printed on at least a portion of the semiconductor devices creating first recesses aligned with a plurality of electrical terminals on the semiconductor devices. A conductive material is printed in... Agent: Hsio Technologies, LLC

20120056328 - Die edge contacts for semiconductor devices: A semiconductor device utilizing die edge contacts is provided. An integrated circuit die has a post-passivation layer with a trench filled with a conductive material extending from a contact to a die edge, thereby forming a die edge contact. Optionally, a through substrate via may be positioned along the die... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120056331 - Methods of forming semiconductor device and semiconductor devices formed by the same: Provided are a method of forming a semiconductor device including a via and a semiconductor device formed by the same. In the method, by forming an unseeded layer that covers a seed layer disposed on a substrate and at a side wall of a via hole, exposes the seed layer... Agent: Electronics And Telecommunications Research Institute

20120056330 - Semiconductor device: A semiconductor device may include a substrate and a through electrode. The substrate may have a first surface and a second surface opposite to the first surface, the substrate including circuit patterns formed on the first surface. The through electrode penetrates the substrate and may be electrically connected to the... Agent: Samsung Electronics Co., Ltd.

20120056329 - Semiconductor device and method of forming interposer frame over semiconductor die to provide vertical interconnect: A semiconductor device has a first semiconductor die mounted over a carrier. An interposer frame has an opening in the interposer frame and a plurality of conductive pillars formed over the interposer frame. The interposer is mounted over the carrier and first die with the conductive pillars disposed around the... Agent: Stats Chippac, Ltd.

20120056333 - Layered chip package and method of manufacturing same: A layered chip package includes a main body, and wiring that includes a plurality of wires disposed on a side surface of the main body. The main body includes: a main part including first and second layer portions; and a plurality of first and second terminals that are disposed on... Agent: Headway Technologies, Inc.

20120056335 - Multi-chip package with offset die stacking: A semiconductor device has a plurality of stacked semiconductor dice mounted on a substrate. Each die has similar dimensions. Each die has a first plurality of bonding pads arranged along a bonding edge of the die. A first group of the dice are mounted to the substrate with the bonding... Agent: Mosaid Technologies Incorporated

20120056334 - Semiconductor device and method of forming pre-molded substrate to reduce warpage during die mounting: A semiconductor device has a substrate with a plurality of conductive vias formed through the substrate and conductive layer formed over the substrate. A first encapsulant is deposited over the substrate outside a die attach area of the substrate. The first encapsulant surrounds each die attach area over the substrate... Agent: Stats Chippac, Ltd.

20120056336 - Semiconductor package for controlling warpage: A semiconductor structure having a ring. The semiconductor structure includes a substrate, at least one chip, and the ring. The substrate has a first surface. The chip is located on the first surface of the substrate and electrically connected to the substrate. The ring has a first portion and a... Agent:

20120056337 - Rfic chip mounting structure: An RFIC module includes an RFIC chip that is mounted on a mounting substrate and that is encapsulated with an encapsulation resin layer. The mounting substrate includes a flexible base and electrodes provided on the flexible base. External terminals are disposed near four corners of a mounting surface of the... Agent: Murata Manufacturing Co., Ltd.

20120056338 - Pressure-sensitive adhesive sheet for protecting semiconductor wafer: The present invention provides a pressure-sensitive adhesive sheet for protecting a semiconductor wafer, which does not cause curve (warpage) in the semiconductor wafer, when the semiconductor wafer is ground, is excellent in followability to a pattern, has adequate stress dispersibility in a grinding operation, suppresses the crack in a wafer... Agent: Nitto Denko Corporation

20120049145 - Non-volatile memory elements and memory devices including the same: A non-volatile memory element includes: a memory layer disposed between a first electrode and a second electrode; and a buffer layer disposed between the memory layer and the first electrode. The memory layer includes a first material layer and a second material layer. The first material layer and the second... Agent: Samsung Electronics Co., Ltd.

20120049144 - Post-fabrication self-aligned initialization of integrated devices: Creating a localized region of material having a target chemical composition by defining an electrical circuit on a substrate, and depositing on the electrical circuit one or more layers of materials having one or more chemical compositions. An electrical current pulse is applied to the electrical circuit to create a... Agent: International Business Machines Corporation

20120049146 - Memory cells and methods of forming memory cells: Some embodiments include a memory cell that contains programmable material sandwiched between first and second electrodes. The memory cell can further include a heating element which is directly against one of the electrodes and directly against the programmable material. The heating element can have a thickness in a range of... Agent:

20120049147 - Resistance-variable memory device and a production method therefor: Disclosed are a ReRAM, which is a non-volatile memory device, and a production method therefor. A resistance-variable layer, which varies the resistance in accordance with an applied pulse, has a multilayered structure comprising 3 oxide films. Each oxide film consists of an oxide film of the same type as the... Agent:

20120049149 - Silicon based nanostructure crossbar memory: The present application describes a crossbar memory array. The memory array includes a first array of parallel nanowires of a first material and a second array of parallel nanowires of a second material. The first and the second array are oriented at an angle with each other. The array further... Agent: The Regents Of The University Of Michigan

20120049148 - Three-dimensional nonvolatile semiconductor memory: According to one embodiment, a three-dimensional nonvolatile semiconductor memory includes a semiconductor substrate, a memory cell array includes memory cells stacked on the semiconductor substrate and first conductive layers connected to the memory cells, a dummy stacked layer structure includes second conductive layers stacked on the semiconductor substrate, and surrounding... Agent:

20120049150 - Semiconductor device, manufacturing method therefor, and solar cell: A semiconductor device includes: a silicon layer (12); an intermediate silicide layer (28) that is provided on the silicon layer (12), has openings, and includes barium silicide; and an upper silicide layer (14) that covers the intermediate silicide layer (28), is positioned to be in contact with the silicon layer... Agent: University Of Tsukuba

20120049158 - Enhancement of optical polarization of nitride light-emitting diodes by increased indium incorporation: An increase in the Indium (In) content in light-emitting layers of light-emitting diode (LED) structures prepared on nonpolar III-nitride substrates result in higher polarization ratios for light emission than LED structures containing lesser In content. Polarization ratios should be higher than 0.7 at wavelengths longer than 470 nm.... Agent: The Regents Of The University Of California

20120049159 - Light emitting device: A light emitting device includes: a first layer made of a semiconductor of a first conductivity type; a second layer made of a semiconductor of a second conductivity type; an active layer including a multiple quantum well provided between the first layer and the second layer, impurity concentration of the... Agent: Kabushiki Kaisha Toshiba

20120049151 - Light-emitting devices with two-dimensional composition-fluctuation active-region and method for fabricating the same: The present invention discloses a light-emitting device with a two-dimensional composition-fluctuation active-region obtained via two-dimensional thermal conductivity modulation of the material lying below the active-region. The thermal conductivity modulation is achieved via formation of high-density pores in the material below the active-region. The fabrication method of the light-emitting device and... Agent: Invenlux Corporation

20120049156 - Nitride semiconductor device and semiconductor optical device: A nitride semiconductor device which improves the light emission efficiency is provided. The nitride semiconductor light emitting device includes the nitride semiconductor layer having a growth surface and the nitride semiconductor layer (layered structure) which is formed on the growth surface of the semiconductor layer, and includes an active layer... Agent: Sharp Kabushiki Kaisha

20120049157 - Nitride semiconductor light emmitting device and method for manufacturing the same: According to one embodiment, in a nitride semiconductor light emitting device, a first clad layer includes an n-type nitride semiconductor. An active layer is formed on the first clad layer, and includes an In-containing nitride semiconductor. A GaN layer is formed on the active layer. A first AlGaN layer is... Agent:

20120049155 - Semiconductor light emitting device: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting part, and a multilayered structural body. The light emitting part is provided between the first and second semiconductor layers and includes barrier layers and well layers alternately stacked. The... Agent: Kabushiki Kaisha Toshiba

20120049153 - Solid state lighting devices with current routing and associated methods of manufacturing: Solid state lighting (“SSL”) devices with improved contacts and associated methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The... Agent: Micron Technology, Inc.

20120049152 - Solid state lighting devices with low contact resistance and methods of manufacturing: Solid state lighting (“SSL”) devices with improved contacts and associated methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The... Agent: Micron Technology, Inc.

20120049154 - Solid state lighting devices with point contacts and associated methods of manufacturing: Solid state lighting (“SSL”) devices with improved contacts and associated methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The... Agent: Micron Technology, Inc.

20120049160 - Field-effect transistor: The disclosed field-effect transistor has a graphene channel, and does not exhibit ambipolar properties. Specifically, the field-effect transistor has a semi-conducting substrate; a channel including a graphene layer disposed on the aforementioned semiconductor substrate; a source electrode and drain electrode comprising a metal; and a gate electrode. The aforementioned channel... Agent:

20120049161 - Formation of a vicinal semiconductor-carbon alloy surface and a graphene layer thereupon: A surface of a single crystalline semiconductor-carbon alloy layer having a surface normal along or close to a major crystallographic direction is provided by mechanical means such as cutting and/or polishing. Such a surface has naturally formed irregular surface features. Small semiconductor islands are deposited on the surface of single... Agent: International Business Machines Corporation

20120049162 - Use of sack geometry to implement a single qubit phase gate: An implementation of a single qubit phase gate for use in a quantum information processing scheme based on the υ=5/2 fractional quantum Hall (FQH) state is disclosed. Using sack geometry, a qubit consisting of two σ-quasiparticles. which may be isolated on respective antidots, may be separated by a constriction from... Agent: Microsoft Corporation

20120049176 - Azafluorene derivative and organic light-emitting device using the derivative: A novel azafluorene derivative and an organic light-emitting device having the derivative are provided. The organic light-emitting device includes a pair of electrodes composed of an anode and a cathode one of which is a transparent or semi-transparent electrode, and an organic compound layer interposed between the pair of electrodes.... Agent: Canon Kabushiki Kaisha

20120049174 - Conjugated compound, and organic thin film and organic thin film element each comprising same: [In the formulas, Ar represents an optionally substituted trivalent aromatic hydrocarbon or optionally substituted trivalent heterocyclic group, and A represents hydrogen, a halogen atom or a monovalent group. When multiple A groups are present they may be the same or different, and at least one A represents an electron-withdrawing group.... Agent: Sumitomo Chemical Company, Limited

20120049163 - Continuous process for preparing nanodispersions using an ultrasonic flow-through heat exchanger: Described is a continuous process for preparing nanodispersions including providing a composition comprising a liquid and a solute; heating the composition to dissolution of the solute to form a solution comprising the solute dissolved in the liquid; directing the heated solution through a continuous tube wherein the continuous tube has... Agent: Xerox Corporation

20120049168 - Cross-linked charge transport layer containing an additive compound: Organic electronic devices comprising an improved charge transport layer. The charge transport layer comprises a covalently cross-linked host matrix. The covalently cross-linked matrix comprises a charge transport compound as molecular subunits that are cross-linked to each other. The charge transport layer further comprises a second charge transport compound as an... Agent: Universal Display Corporation

20120049164 - Cross-linked hole transport layer with hole transport additive: Organic electronic devices comprising an improved charge transport layer. The charge transport layer comprises a covalently cross-linked host matrix. The covalently cross-linked matrix comprises a charge transport compound as molecular subunits that are cross-linked to each other. The charge transport layer further comprises a second charge transport compound as an... Agent: Universal Display Corporation

20120049171 - Electronic device and method of manufacturing the same, and semiconductor device and method of manufacturing the same: Disclosed herein is an electronic device, including: (A) a control electrode; (B) a first electrode and a second electrode; and (C) an active layer composed of an organic semiconductor material layer provided between the first electrode and the second electrode so as to face the control electrode through an insulating... Agent: Sony Corporation

20120049172 - Film-forming ink, film-forming method, liquid droplet discharging device, method for preparing light-emitting element, light-emitting element, light-emitting device and electronic apparatus: A film-forming ink includes: film-forming materials containing a π-conjugated compounds; and a liquid medium which is capable of dissolving or dispersing the film-forming material and containing a compound represented by the following formula (I), wherein the compound is one in which the substituent of at least one of R1 to... Agent: Seiko Epson Corporation

20120049170 - Light emitting device: The light emitting device includes an organic electroluminescent element (20) and a diffractive optical element (30). The organic electroluminescent element (20) includes an anode layer (21), a cathode layer (22), and plural light emitting layers (231 and 232) interposed between the anode layer (21) and the cathode layer (22) and... Agent: Panasonic Electroc Works Co., Ltd

20120049178 - Organic el display device and manufacturing method thereof: An organic EL display device (10) includes: an insulating substrate (20); a first planarizing film (21) formed on the insulating substrate (20) and made of a resin; a first electrode (13) formed on the first planarizing film (21); an organic EL layer (17) formed on the first electrode (13); a... Agent: Sharp Kabushiki Kaisha

20120049175 - Organic el display panel, organic el display device having the same, and method for manufacturing organic el display panel: An organic EL display panel includes a wiring layer, a planarizing film above the wiring layer, and a plurality of light-emitting cells in a row. A pair of first banks are above the planarizing film to delimit lateral surfaces of the light-emitting cells. The planarizing film includes a plurality of... Agent: Panasonic Corporation

20120049167 - Organic electroluminescent device:

20120049177 - Organic electronic devices:

20120049173 - Organic field effect transistor with block copolymer layer: An organic field effect transistor (OFET) having a block copolymer (BCP) layer is provided. The OFET includes a gate, an optional dielectric layer, a BCP layer, an organic semiconductor layer, a drain, and a source. The BCP layer is formed between the dielectric layer and the organic semiconductor layer when... Agent: National Chung Cheng University

20120049166 - Organic light emitting diode: An organic light emitting diode includes an anode, a first emissive layer, a carrier modulating layer, a second emissive layer, and a cathode. The first emissive layer is located atop the anode, the carrier modulating layer is located atop the first emissive layer for helping holes to pass therethrough, the... Agent: National Tsing Hua University

20120049165 - Organic light emitting diode and manufacturing method thereof: The present invention discloses an organic light emitting diode and a manufacturing method thereof. The OLED comprises a first electrode, a first hole-transporting layer disposed on the first electrode, a second hole-transporting layer disposed on the first hole-transporting layer, a first light-emitting layer disposed on the second hole-transporting layer, an... Agent: National Tsing Hua University

20120049169 - Organic light-emitting display device and method of manufacturing the same: An organic light-emitting display device includes a pixel electrode and a pixel defining layer which are formed by using one mask process. A method for manufacturing the display includes thermally reflowing a remaining portion of a photo-sensitive organic film that is used as a mask to form the pixel electrode... Agent:

20120049181 - Composition for oxide thin film, method of preparing the composition, method of forming the oxide thin film, and electronic device using the composition: Provided are a composition for an oxide semiconductor, a method of preparing the composition, methods of forming an oxide semiconductor thin film and an electronic device using the composition. The composition for an oxide semiconductor includes a tin compound, a zinc compound, and a low electronegativity metal compound containing a... Agent: Industry-academic Cooperation Foundation, Yonsei University

20120049180 - Compound semiconductor device and method of manufacturing the same: A compound semiconductor device includes a substrate; a compound semiconductor layer formed over the substrate; and a gate electrode formed over the compound semiconductor layer with a gate insulating film arranged therebetween. The gate insulating film includes a first layer having reverse spontaneous polarization, the direction of which is opposite... Agent: Fujitsu Limited

20120049184 - Display device: To suppress fluctuation in the threshold voltage of a transistor, to reduce the number of connections of a display panel and a driver IC, to achieve reduction in power consumption of a display device, and to achieve increase in size and high definition of the display device. A gate electrode... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120049183 - Electronic device, manufacturing method of electronic device, and sputtering target: A film formation is performed using a target in which a material which is volatilized more easily than gallium when heated at 400° C. to 700° C., such as zinc, is added to gallium oxide by a sputtering method with high mass-productivity which can be applied to a large-area substrate,... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120049179 - Group-iii nitride-based light emitting device having enhanced light extraction efficiency and manufacturing method thereof: A method for enhancing light extraction efficiency of a group-III nitride-based light emitting device is disclosed. By roughening a n-type group-III nitride-based cladding layer or an undoped group-III nitride-based layer, a reflecting layer is formed. Because of gaps on the roughened surface, total internal reflection occurs, and light beams can... Agent: Walsin Lihwa Corporation

20120049182 - Nitride-based compound semiconductor and nitride-based compound semiconductor device: A nitride-based compound semiconductor includes an atom of at least one group-III element selected from the group consisting of Al, Ga, In, and B, a nitrogen atom, and a metal atom that forms a compound by bonding with an interstitial atom of the at least one group-III element. The metal... Agent: Advanced Power Device Research Association

20120049185 - Semiconductor device and electronic device using the same: To provide a semiconductor device which can detect low illuminance. A photoelectric conversion element, a diode-connected first transistor, and a second transistor are included. A gate of the first transistor is electrically connected to a gate of the second transistor. One of a source and a drain of the first... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120049186 - Semiconductor structures: Test structures are formed during semiconductor processing with a single mask that is used in a manner that also allows alignment marks to be formed which do not interfere with one another as subsequent layers are patterned. The test structures can provide insight into performance characteristics of different types of... Agent:

20120049187 - Semiconductor device: The present invention is a semiconductor device including an insulating gate power transistor etc. in a chip, wherein a gate protection element includes a bidirectional Zener diode and the bidirectional Zener diode has a plurality of P-type impurity regions (or a P-type impurity region) having different concentrations so that the... Agent: Renesas Electronics Corporation

20120049188 - Method of forming polycrystalline silicon layer and thin film transistor and organic light emitting device including the polycrystalline silicon layer: A method for forming a polycrystalline silicon layer includes: forming an amorphous silicon layer on a substrate; forming a metal catalyst on the amorphous silicon layer; forming a gettering metal layer on an overall surface of the amorphous silicon layer where the metal catalyst is formed; and performing a heat... Agent:

20120049189 - Semiconductor device and method of manufacturing the same: It is an object to manufacture a semiconductor device in which a transistor including an oxide semiconductor has normally-off characteristics, small fluctuation in electric characteristics, and high reliability. First, first heat treatment is performed on a substrate, a base insulating layer is formed over the substrate, an oxide semiconductor layer... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120049190 - Semiconductor device and manufacturing method thereof: To reduce parasitic capacitance between a gate electrode and a source electrode or drain electrode of a dual-gate transistor. A semiconductor device includes a first insulating layer covering a first conductive layer; a first semiconductor layer, second semiconductor layers, and an impurity semiconductor layer sequentially provided over the first insulating... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120049191 - Organic light emitting display device and method of manufacturing the same: In an organic light emitting display device and a method of manufacturing the same, the organic light emitting display device comprises: an active layer of a thin film transistor, which is formed on a substrate; a gate electrode formed on the active layer and a first insulating layer, and including... Agent: Samsung Mobile Display Co., Ltd.

20120049193 - Semiconductor device: A semiconductor device 100 according to the present invention includes a TFT 120 and a TFT 140. The TFT 120 has a gate electrode 122, a semiconductor layer 130 including a microcrystalline semiconductor film 132, and a gate insulating layer 124 provided between the gate electrode 122 and the semiconductor... Agent: Sharp Kabushiki Kaisha

20120049192 - Thin film transistor substrate and flat panel display apparatus: A thin film transistor substrate including a plurality of thin film transistors, and a flat panel display apparatus. Each of the plurality of thin film transistors includes an active layer comprising a first channel region having a first plurality of protrusion lines arranged therein and a second channel region and... Agent: Samsung Mobile Display Co., Ltd.

20120049194 - Increased charge carrier mobility in transistors by providing a strain-inducing threshold adjusting semiconductor material in the channel: In complex semiconductor devices, high-k metal gate electrode structures may be provided in an early manufacturing stage, wherein the threshold voltage adjustment may be accomplished by forming two different semiconductor materials on the silicon base material. In this manner, superior strain conditions may be obtained in the channel region. For... Agent: Globalfoundries Inc.

20120049196 - Replacement metal gate transistors with reduced gate oxide leakage: A semiconductor device has a substrate, a gate dielectric layer, and a metal gate electrode on the gate dielectric layer. The gate dielectric layer includes an oxide layer having a dielectric constant (k) greater than 4, and silicon concentrated at interfaces of the oxide layer with the substrate and with... Agent: Advanced Micro Devices, Inc.

20120049195 - Transistor with etching stop layer and manufacturing method thereof: This invention provides a transistor with an etching stop layer and a manufacturing method thereof. The transistor structure includes a substrate, a crystalline semiconductor layer, an etching stop structure, an ohmic contact layer, a source, a drain, a gate insulating layer, and a gate. The manufacturing method is performed by... Agent: Au Optronics Corporation

20120049197 - Pixel structure and manufacturing method thereof: A pixel structure is provided. A first insulating pattern is on the first polysilicon pattern. A second insulating pattern is on the second polysilicon pattern and separated from the first insulating pattern. An insulating layer covers the first and the second insulating patterns. A first gate and a second gate... Agent: Au Optronics Corporation

20120049198 - Array substrate: An array substrate includes a substrate, an organic layer, a via hole, an inorganic layer, and a patterned transparent pixel electrode layer. The thin film transistor is disposed on the substrate, and the thin film transistor comprises a drain electrode. The organic material layer covers the substrate and the thin... Agent:

20120049199 - Method of forming polycrystalline silicon layer, method of manufacturing thin film transistor including the method, thin-film transistor manufactured by using the method of manufacturing thin-film transistor, and organic light-emitting display device incl: A method of forming a polycrystalline layer includes forming a buffer layer on a substrate; treating the buffer layer with hydrogen plasma; forming an amorphous silicon layer on the buffer layer; forming a metallic catalyst layer for crystallizing the amorphous silicon layer on the amorphous silicon layer; and heat treating... Agent:

20120049200 - Systems and methods for preparing freestanding films using laser-assisted chemical etch, and freestanding films formed using same: Systems and methods for preparing freestanding films using laser-assisted chemical etch (LACE), and freestanding films formed using same, are provided. In accordance with one aspect a substrate has a surface and a portion defining an isotropically defined cavity; and a substantially continuous film is disposed at the substrate surface and... Agent:

20120049201 - Semiconductor device and manufacturing method of the same: In a CMIS device, to improve the operating characteristics of an n-channel electric field transistor that is formed by using a strained silicon technique, without degrading the operating characteristics of a p-channel field effect transistor. After forming a source/drain (an n-type extension region and an n-type diffusion region) of an... Agent: Renesas Electronics Corporation

20120049202 - Semiconductor device and method of manufacturing semiconductor device: The semiconductor device according to the present invention includes a semiconductor layer of a first conductivity type made of SiC, a body region of a second conductivity type formed on a surface layer portion of the semiconductor layer, a gate trench dug down from a surface of the semiconductor layer... Agent: Rohm Co., Ltd

20120049212 - Led chip package structure with a high-efficiency heat-dissipating substrate and method for making the same: An LED chip package structure with a high-efficiency heat-dissipating substrate includes a substrate unit, an adhesive body, a plurality of LED chips, package bodies and frame layers. The substrate unit has a positive substrate, a negative substrate, and a plurality of bridge substrates separated from each other and disposed between... Agent: Harvatek Corporation

20120049204 - Led module: An LED module includes an electrically insulating ceramic base with a circuit layer directly coated thereon, a plurality of LED dies directly fixed on the base and electrically connected to the circuit layer; and a packaging structure encapsulating the LED dies.... Agent: Foxsemicon Integrated Technology, Inc.

20120049208 - Light emitting device: The present disclosure provides a light emitting device, including a serially-connected LED array including a plurality of LED cells on a single substrate, including a first LED cell, a second LED cell, and a serially-connected LED sub-array including at least three LED cells intervening the first and second LED cell,... Agent:

20120049209 - Light emitting device: The present disclosure provides a light emitting device including a substrate and a serially-connected LED array of a plurality of LED cells epitaxially formed on the substrate, and the serially-connected LED array including a first LED cell; a second LED cell; and a serially-connected LED sub-array including at least three... Agent:

20120049211 - Method for manufactcuring light-emitter, organic display panel using light-emitter, organic light-emitting device and organic display device: A resin material layer including photosensitive resin material is formed on an interlayer on an underlayer. By partially exposing and developing the resin material layer using developer in which the resin material layer and the interlayer are soluble, an uncured portion of the resin material layer is removed to form... Agent: Panasonic Corporation

20120049203 - Multi-dimensional solid state lighting device array system and associated methods and structures: A multi-dimensional solid state lighting (SSL) device array system and method are disclosed. An SSL device includes a support, a pillar having several sloped facets mounted to the support, and a flexible substrate pressed against the pillar. The substrate can carry a plurality of solid state emitters (SSEs) facing in... Agent: Micron Technology, Inc.

20120049210 - Organic el display unit and electronic device: An organic EL display unit includes: an organic layer provided on a substrate; a plurality of pixels arranged in a display region on the substrate; and a dividing wall provided on the substrate and separates adjacent pixels out of the plurality of pixels. The dividing wall is composed of a... Agent: Sony Corporation

20120049206 - Organic light-emitting display device: An organic light-emitting display device includes: a substrate; pixels on a first side of the substrate, each of the pixels comprising a first region for emitting light and a second region for transmitting external light; pixel circuits on the first regions of the pixels, each of the pixel circuits comprising... Agent:

20120049205 - Structure of light-emitting diode (led): A stricture of light-emitting diode includes a substrate, a board, light-emitting dies, and packages. The board forms spaced reflection receptacles, each of which has a side wall forming an inclined reflection surface. The board has a surface on which conductive traces are formed. The light-emitting dies are respectively received in... Agent: Unity Opto Technology Co., Ltd.

20120049207 - Thin film deposition apparatus, organic light-emitting display manufactured by using thin film deposition apparatus, and method of manufacturing the organic light-emitting display: A thin film deposition apparatus, which has high external light transmittance and a cathode having a uniform thickness, is disclosed. In one embodiment, the thin film deposition apparatus includes a deposition source spaced apart from a center of the substrate and configured to emit a deposition material toward the substrate... Agent: Samsung Mobile Display Co., Ltd.

20120049213 - Light-emitting device: A light-emitting device is provided that is capable of being directly connected to an alternative current source, including at least one electronic element; at least one light-emitting diode array chip; at least one bonding pad, a conductive trace, and a submount for supporting the electronic element, the light-emitting diode array... Agent:

20120049214 - Monolithic multi-junction light emitting devices including multiple groups of light emitting diodes: A packaged light emitting diode (LED) includes a submount, a monolithic multi-junction LED on the submount, and an encapsulant material on the monolithic multi-junction LED. The monolithic multi-junction LED includes a substrate, a plurality of sub-LEDs on the submount, a plurality of conductive metal interconnects coupled to the sub-LEDs and... Agent:

20120049215 - Organic light-emitting display device: An organic light-emitting display device that is transparent and prevents distortion of an image transmitted therethrough by preventing light from scattering during image display. The organic light-emitting display device comprises a plurality of pixels, in which each pixel includes a light transmission area, a light emitting area, and a light... Agent: Samsung Mobile Display Co., Ltd.

20120049216 - Alternating current light-emitting device: The present invention provides an alternating current light-emitting diode (AC LED), which uses a light compensation layer disposed on the light-emitting surface of the AC LED. The materials of the light compensation layer can be phosphorescent or fluorescent materials. The light-emitting mechanism is mainly the light-emitting mechanism of electron-hole pairs... Agent: Formosa Epitaxy Incorporation

20120049221 - Led unit: An LED unit includes an LED and an optical element. The LED includes a substrate, an LED chip fixed on the substrate and an encapsulation encapsulating the LED chip. The LED further includes a first magnet fixed on the substrate. The optical element includes an optical adjustment layer and a... Agent: Advanced Optoelectronic Technology, Inc.

20120049229 - Light emitting device: Disclosed is a light emitting structure comprising a first semiconductor layer, a second semiconductor layer, and an active layer disposed on between the first and second semiconductor layers, a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer. The... Agent: Lg Innotek Co., Ltd.

20120049230 - Light emitting device: A light emitting device is disclosed. The disclosed light emitting device includes a light emitting structure comprising a first semiconductor layer, a second semiconductor layer, and an active layer interposed between the first and second semiconductor layers, an insulating layer contacting a lower surface of the light emitting structure, and... Agent: Lg Innotek Co., Ltd.

20120049225 - Light emitting device and method of manufacturing thereof: Provided is a method of manufacturing a light emitting device capable of maintaining high optical output power while suppressing discoloration of the reflective film. A method of manufacturing a light emitting device according to an embodiment includes steps in an order of, preparing an electrically conductive member provided with a... Agent: Nichia Corporation

20120049226 - Light emitting device, light emitting device package, and light unit: Provided are a light emitting device, a light emitting device package, and a light unit. The light emitting device includes a support substrate, a light emitting structure layer disposed on the support substrate, the light emitting structure layer including a first conductive type semiconductor layer, a second conductive type semiconductor... Agent:

20120049224 - Light emitting diode: A light emitting diode, comprising: a wiring layer; and a semiconductor light emitting element provided on the wiring layer, the semiconductor light emitting element further comprising: a semiconductor light emitting layer; a transparent conductive layer; a metal reflection layer; a transparent insulating film; and a first electrode part and a... Agent: Hitachi Cable, Ltd.

20120049220 - Light emitting diode assembly and thermal control blanket and methods relating thereto: The present disclosure relates generally to a light emitting diode assembly and a thermal control blanket. The light emitting diode assembly and the thermal control blanket have advantageous reflective and thermal properties.... Agent: E.i. Du Pont De Nemours And Company

20120049223 - Light emitting diode with improved luminous efficiency: Exemplary embodiments of the present invention relate to light emitting diodes. A light emitting diode according to an exemplary embodiment of the present invention includes a substrate having a first side edge and a second side edge, and a light emitting structure arranged on the substrate. The light emitting structure... Agent: Seoul Opto Device Co., Ltd.

20120049219 - Light emitting element: A light emitting element includes a semiconductor laminate structure including a first semiconductor layer of a first conductivity type, a light emitting layer, and a second semiconductor layer of a second conductivity type different from the first conductivity type, a part of the second semiconductor layer and the light emitting... Agent: Toyoda Gosei Co., Ltd.

20120049222 - Light-emitting device and method for manufacturing light-emitting device: A light-emitting device includes: a substrate; a light-emitting section provided on an upper surface of the substrate, the light-emitting section including an LED chip and a sealing resin containing fluorescent material covering the LED chip; and a silicon oxide insulating film provided between the substrate and the light-emitting section, the... Agent:

20120049227 - Light-emitting devices: A light-emitting device of an embodiment of the present application comprises a semiconductor layer sequence provided with a first main side, a second main side, and an active layer; a beveled trench formed in the semiconductor layer sequence, having a top end close to the second main side, a bottom... Agent:

20120049228 - Optoelectronic semiconductor bodies having a reflective layer system: An optoelectronic semiconductor body (1) having an active semiconductor layer sequence (10) and a reflective layer system (20) is described. The reflective layer system (20) comprises a first radiation-permeable layer (21), which adjoins the semiconductor layer sequence (10), and a metal layer (23) on the side of the first radiation-permeable... Agent: Osram Opto Semiconductors Gmbh

20120049217 - Organic light-emitting diode employing mixed host and method for fabricating the same: A method for fabricating an organic light-emitting diode employing a mixed host is disclosed, which comprises the following steps: (A) providing a substrate with a first electrode formed thereon; (B) coating a mold with a light-emitting layer material, wherein the light-emitting layer material comprises: a mixed host, and dye molecule(s)... Agent:

20120049231 - Phosphor coating method for fabricating light emitting semiconductor device and applications thereof: In one aspect, a light emitting unit comprises: a first semiconductor layer having a first electric property; a second semiconductor layer having a second electric property disposed over the first semiconductor layer; an active layer disposed between the first semiconductor layer and the second semiconductor layer; a first electrode disposed... Agent: Everlight Electronics Co., Ltd.

20120049218 - Semiconductor light emitting component and method for manufacturing the same: A method for manufacturing a semiconductor light emitting component is disclosed in the present invention. First, a substrate is provided and an epitaxial structure is formed thereon, wherein a first surface of the epitaxial structure contacts the substrate. The epitaxial structure includes a first type doped layer, a light emitting... Agent: Pinecone Lighting Inc.

20120049232 - Semiconductor light-emitting element, method for producing the same, lamp, lighting device, electronic equipment, mechanical device and electrode: Disclosed is a semiconductor light-emitting element including a substrate; a laminated semiconductor layer in which an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer are laminated on the substrate in this order; one electrode joined with the p-type semiconductor layer; and another electrode joined with the n-type... Agent: Showa Denko K.k.

20120049234 - High-brightness light emitting diode: A light-emitting diode includes a substrate, a first semiconductor layer above the substrate, an active layer above the first semiconductor layer, a second semiconductor layer above the active layer, a trench penetrating the second semiconductor layer and the active layer thereby exposing a portion of the first semiconductor layer, an... Agent: Huga Optotech Inc.

20120049237 - Light emitting device: In order to provide a light emitting device at low costs with high reliability, while suppressing deterioration in luminance of light emitting elements due to the existence of a protection element, the protection element is mounted on a mounting surface of a first lead terminal located inside a cavity in... Agent:

20120049236 - Light-emitting element: A light-emitting element includes a semiconductor laminated structure including a nitride semiconductor, and formed by laminating a first semiconductor layer of a first conductivity type, a light-emitting layer and a second semiconductor layer of a second conductivity type different from the first conductivity type, the first semiconductor layer being exposed... Agent: Toyoda Gosei Co., Ltd.

20120049235 - Organic light emitting diode packaging structure and manufacturing method thereof: An organic light emitting diode packaging structure and a manufacturing method thereof is provided. The organic light emitting diode packaging structure includes a substrate, an organic light emitting diode, a film, and a metal layer. The organic light emitting diode is disposed on the substrate. The film has a surface... Agent: Au Optronics Corporation

20120049238 - Semiconductor light emitting element: A semiconductor light emitting element includes: a semiconductor layer; first electrodes arranged in a staggered array on an upper surface of the semiconductor layer; and a second electrode on a lower surface of the semiconductor layer. Each first electrode includes an external connection, a first elongated portion which extends from... Agent: Nichia Corporation

20120049233 - Thermal management system for multiple heat source devices: The present disclosure provides systems and methods for forming a semiconductor device. The semiconductor device includes a substrate having a first side and a second side opposite the first side. A first heat producing element is formed on the first side of the substrate. A second heat producing element is... Agent: Taiwan Semiconductor Manufacturing Company, Ltd., ("tsmc")

20120049239 - Graphene transparent electrode, graphene light emitting diode, and method of fabricating the graphene light emitting diode: A graphene transparent electrode, which comprises: at least one graphene sheet; wherein the graphene sheets electrically connect with each other by overlapping with each other, each of the graphene sheets has a diameter from 10 μm to 1 mm, the quantity of the graphene sheets in the graphene transparent electrode... Agent:

20120049240 - Semiconductor device: On a main surface of a semiconductor substrate, an N− semiconductor layer is formed with a dielectric portion including relatively thin and thick portions interposed therebetween. In a predetermined region of the N− semiconductor layer, an N-type impurity region and a P-type impurity region are formed. A gate electrode is... Agent: Mitsubishi Electric Corporation

20120049241 - Cdm-resilient high voltage esd protection cell: In a high voltage ESD protection structure with a gate voltage reference and low impedance load, the CDM robustness of the structure is improved by including a gate resistor and a reverse path diode.... Agent: National Semiconductor Corporation

20120049242 - Optoelectronic device with lateral pin or pin junction: An optoelectronic device, including a semiconductor body having a surface to receive photons and a plurality of doped regions of opposite doping polarities, the doped regions extending substantially from the surface of the semiconductor body and into the semiconductor body, and being arranged in one or more pairs of opposite... Agent: The Silanna Group Pty Ltd

20120049243 - Gan based hemts with buried field plates: A transistor with source and drain electrodes formed in contact with an active region and a gate between the source and drain electrodes and in contact with the active region. A first spacer layer is on at least part of the active region surface between the gate and drain electrodes... Agent: Cree, Inc.

20120049244 - Semiconductor device and method of manufacturing the same, and power supply apparatus: A semiconductor device includes: a substrate; a semiconductor stacked structure, provided over the substrate, including an electron transit layer and an electron supply layer; a gate electrode, a source electrode, and a drain electrode provided over the semiconductor stacked structure; a gate pad, a source pad, and a drain pad... Agent: Fujitsu Limited

20120049245 - Memory array with an air gap between memory cells and the formation thereof: Memory arrays and their formation are disclosed. One such memory array has first and second memory cells over a semiconductor, an air gap between the first and second memory cells, and an isolation region within the semiconductor and under the air gap so that the isolation region is aligned with... Agent: Micron Technology, Inc.

20120049246 - Vertical gated access transistor: A method of forming an apparatus includes forming a plurality of deep trenches and a plurality of shallow trenches in a first region of a substrate. At least one of the shallow trenches is positioned between two deep trenches. The shallow trenches and the deep trenches are parallel to each... Agent: Micron Technology, Inc.

20120049247 - Modified profile gate structure for semiconductor device and methods of forming thereof: A method of fabricating a semiconductor device is illustrated. A modified profile opening is formed on a substrate. The modified profile opening includes a first width proximate a surface of the substrate and a second width opposing the substrate. The second width is greater than the first width. A metal... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120049251 - Semiconductor device: A semiconductor device may include, but is not limited to: a semiconductor substrate; a first insulating film; and a first semiconductor film. The semiconductor substrate has a groove defining a first portion of the semiconductor substrate. The first portion extends upward. The first insulating film fills the groove. The first... Agent: Elpida Memory, Inc

20120049252 - Semiconductor device: A semiconductor device includes a first insulating film formed between a gate electrode and a first flat semiconductor layer, and a sidewall-shaped second insulating film formed to surround an upper sidewall of a first columnar silicon layer while contacting an upper surface of the gate electrode and to surround a... Agent: Unisantis Electronics Singapore Pte Ltd.

20120049253 - Semiconductor device and method for fabricating the same: A semiconductor device and a method for fabricating the same are provided. The method includes: forming a plurality of protruded patterns smaller than gate structures by selectively removing predetermined portions of a substrate; and forming the gate structures over the protruded patterns. The semiconductor device includes: a plurality of protruded... Agent: Hynix Semiconductor Inc.

20120049250 - Semiconductor integrated circuit device including an epitaxial layer: A semiconductor integrated circuit device includes a substrate. A gate structure is formed on the substrate and includes a gate insulating film and a gate electrode. A first sidewall spacer is formed on two sidewalls of the gate structure. A second sidewall spacer is formed on the first sidewall spacer.... Agent:

20120049249 - Semiconductor structure and method for fabricating the same: A semiconductor structure and a method for fabricating the same. A semiconductor structure includes a semiconductor substrate; a channel region formed in the semiconductor substrate; a gate including a dielectric layer and a conductive layer and formed above the channel region; source and drain regions formed at opposing sides of... Agent: Institute Of Microelectronics, Chinese Academy Of Sciences

20120049248 - Transistors having a control gate and one or more conductive structures: Transistors having a dielectric over a semiconductor, a control gate over the dielectric at a particular level, and one or more conductive structures over the dielectric at the particular level facilitate control of device characteristics of the transistor. The one or more conductive structures are between the control gate and... Agent: Micron Technology, Inc.

20120049254 - Solid-state imaging device and manufacturing method thereof: A solid-state imaging device includes a photoelectric conversion unit, a transistor, and an element separation region separating the photoelectric conversion unit and the transistor. The photoelectric conversion unit and the transistor constitute a pixel. The element separation region is formed of a semiconductor region of a conductivity type opposite to... Agent: Sony Corporation

20120049255 - Gate structure having a buried gate electrode, semiconductor device including the same: A gate structure includes a gate insulation layer, a gate electrode and a capping layer pattern. The gate insulation layer is formed on an inner wall of a recess in a substrate. The gate electrode is formed on the gate insulation layer to partially fill the recess. The capping layer... Agent:

20120049257 - Semiconductor device: A DRAM device can include a plurality of capacitors that are arranged in a line in a first direction. Each of the capacitors can include an upper electrode. A contact pattern having a line shape can extend in the first direction and can be electrically connected to each of the... Agent: Samsung Electronics Co., Ltd.

20120049256 - Semiconductor device having low resistivity region under isolation layer: A semiconductor device includes a buried well, first and second active regions, an isolation layer, and a low resistance region. The buried well is disposed on a substrate and has impurity ions of a first conductivity type. The first and second active regions are disposed on the buried well and... Agent:

20120049258 - Semiconductor memory device and manufacturing method of semiconductor memory device: According to one embodiment, a semiconductor substrate includes a cell region and a peripheral circuit region, a first dielectric film is formed on the semiconductor substrate in the cell region and the peripheral circuit region, a first conductive film is formed on the first dielectric film in the cell region... Agent: Kabushiki Kaisha Toshiba

20120049259 - Electrostatic discharge protection device: The present disclosure provides an ESD protection device. The ESD protection device includes a p-type well region and an n-type well region disposed to contact each other at one side thereof, an n-type drain region disposed on a contact surface between the p-type well region and the n-type well region,... Agent: Bauabtech

20120049260 - Method for forming capacitor and semiconductor device using the same: A semiconductor device includes a MOS capacitor including a gate, a source, and a drain, a cylinder capacitor including a top electrode, a dielectric layer, and a bottom electrode, and a metal interconnection that connects the gate to the bottom electrode.... Agent: Hynix Semiconductor Inc.

20120049261 - Semiconductor device: In a semiconductor device of the invention, a semiconductor pillar configuring a vertical MOS transistor has an upper pillar having a first width and a lower pillar having a second width. A side surface of the upper pillar is covered with a second insulation film and a third insulation film... Agent: Elpida Memory, Inc.

20120049262 - A dram cell structure with extended trench and a manufacturing method thereof: A DRAM cell structure with extended trench, the DRAM cell structure comprises: a NMOS transistor and a trench capacitor connected with the source electrode of the NMOS transistor; the trench capacitor comprises: a semiconductor substrate; a multilayer structure as the bottom plate of the trench capacitor, formed over the semiconductor... Agent: Shanghai Institute Of Microsystem And Information Technology, Chinese Academy

20120049263 - Semiconductor device having extra capacitor structure and manufacturing method thereof: A semiconductor device includes a semiconductor substrate having a conductive type, a source metal layer, a gate metal layer, at least one transistor device, a heavily doped region having the conductive type, a capacitor dielectric layer, a conductive layer. The source metal layer and the gate metal layer are disposed... Agent:

20120049264 - Nand memory constructions and methods of forming nand memory constructions: Some embodiments include NAND memory constructions. The constructions may contain semiconductor material pillars extending upwardly between dielectric regions, with individual pillars having a pair of opposing vertically-extending sides along a cross-section. First conductivity type regions may be along first sides of the pillars, and second conductivity type regions may be... Agent:

20120049265 - Semiconductor devices having dielectric gaps: A method of fabricating a semiconductor device, can be provided by forming first and second gate patterns on a semiconductor substrate. First and second insulating spacers can be formed on first and second sidewalls of the first and second gate patterns, respectively. A capping insulation can be formed on an... Agent: Samsung Electronics Co., Ltd.

20120049266 - Semiconductor devices and methods of manufacturing the same: A semiconductor device including a substrate having a trench formed therein, a plurality of gate structures, an isolation layer pattern and an insulating interlayer pattern. The substrate includes a plurality of active regions defined by the trench and spaced apart from each other in a second direction. Each of the... Agent:

20120049269 - Isolation structure, non-volatile memory having the same, and method of fabricating the same: A method of forming an isolation structure, comprising: (a) providing a base having a recess; (b) forming a stop layer on the base and in the recess; (c) forming a dielectric material on the stop layer so as to allow the rest of the recess to be filled with the... Agent: Macronix International Co., Ltd.

20120049267 - Semiconductor devices and method of manufacturing the same: A semiconductor device includes a pipe channel layer formed over a substrate, a first vertical channel layer formed over the pipe channel layer to couple the pipe channel layer to a bit line, a second vertical channel layer formed over the pipe channel layer to couple the pipe channel layer... Agent:

20120049268 - Three dimensional semiconductor memory devices and methods of fabricating the same: A 3D semiconductor device includes an electrode structure has electrodes stacked on a substrate, semiconductor patterns penetrating the electrode structure, charge storing patterns interposed between the semiconductor patterns and the electrode structure, and blocking insulating patterns interposed between the charge storing patterns and the electrode structure. Each of the blocking... Agent: Samsung Electronics Co., Ltd.

20120049270 - Method for forming a semiconductor device, and a semiconductor with an integrated poly-diode: A method for forming a field effect power semiconductor is provided. The method includes providing a semiconductor body, a conductive region arranged next to a main surface of the semiconductor body, and an insulating layer arranged on the main horizontal surface. A narrow trench is etched through the insulating layer... Agent: Infineon Technologies Austria Ag

20120049271 - Semiconductor device with high-breakdown-voltage transistor: A semiconductor device includes a high-breakdown-voltage transistor having a semiconductor layer. The semiconductor layer has an element portion and a wiring portion. The element portion has a first wiring on a front side of the semiconductor layer and a backside electrode on a back side of the semiconductor layer. The... Agent: Denso Corporation

20120049272 - Vertically-oriented semiconductor selection device for cross-point array memory: A vertical semiconductor material mesa upstanding from a semiconductor base that forms a conductive channel between first and second doped regions. The first doped region is electrically coupled to one or more first silicide layers on the surface of the base. The second doped region is electrically coupled to a... Agent: Micron Technology, Inc.

20120049273 - Depletion mos transistor and charging arrangement: A depletion transistor includes a source region and a drain region of a first conductivity type, a channel region of the first conductivity type arranged between the source region and the drain region and a first gate electrode arranged adjacent the channel region and dielectrically insulated from the channel region... Agent: Infineon Technologies Austria Ag

20120049276 - Semiconductor device and manufacturing method thereof: In a method for manufacturing a semiconductor device, a semiconductor film formed over an insulator is doped with an impurity element to a depth less than the thickness of the semiconductor film, thereby forming an impurity doped layer; a metal silicide layer is formed on the impurity doped layer; the... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120049275 - Semiconductor device and method of manufacturing the same: Provided is a semiconductor device that includes a vertical MOS transistor having a trench structure capable of enhancing a driving performance of the vertical MOS transistor. A thick oxide film is formed next to a gate electrode led out of a trench of the vertical MOS transistor having the trench... Agent:

20120049274 - Trench structures in direct contact: A semiconductor structure includes a semiconductor substrate of a first conductivity, an epitaxial layer of a second conductivity on the substrate and a buried layer of the second conductivity interposed between the substrate and the epitaxial layer. A first trench structure extends through the epitaxial layer and the buried layer... Agent: Infineon Technologies Austria Ag

20120049277 - Lateral-diffusion metal-oxide-semiconductor device: A lateral-diffusion metal-oxide-semiconductor device includes a semiconductor substrate having at least a field oxide layer, a gate having a layout pattern of a racetrack shape formed on the substrate, a common source formed in the semiconductor substrate and enclosed by the gate, and a drain surrounding the gate and formed... Agent:

20120049278 - Semiconductor device: The semiconductor device includes: a first conductive-type first well and a second conductive-type second well configured over substrate to contact each other; a second conductive-type anti-diffusion region configured in an interface where the first conductive-type first well contacts the second conductive-type second well over the substrate; and a gate electrode... Agent:

20120049282 - Gate controlled bipolar junction transistor on fin-like field effect transistor (finfet) structure: An integrated circuit device is disclosed. An exemplary integrated circuit device includes: a semiconductor substrate; a fin structure disposed over the semiconductor substrate; and a gate structure disposed over the base portion of the fin structure. The collector portion is a first doped region including a first type dopant, and... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120049279 - High voltage semiconductor devices: In one embodiment, the semiconductor device includes a first source of a first doping type disposed in a substrate. A first drain of the first doping type is disposed in the substrate. A first gate region is disposed between the first source and the first drain. A first channel region... Agent:

20120049283 - Semiconductor device and manufacturing method thereof: A dual-gate transistor including: a first insulating layer provided to cover a first conductive layer; a first semiconductor layer over the first insulating layer; second semiconductor layers over the first semiconductor layer, the second semiconductor layers are spaced from each other to expose the first semiconductor layer; impurity semiconductor layers... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120049281 - Semiconductor device with effective work function controlled metal gate: According to one embodiment, gate electrodes of a multi-gate field effect transistors and methods of making a gate electrode of a multi-gate field effect transistor are provided. The gate electrode can contain a semiconductor substrate; a dielectric layer over the semiconductor substrate; a fin over the dielectric layer; a gate... Agent: Toshiba America Electronic Components, Inc.

20120049280 - Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layer: An SOI wafer contains a compressively stressed buried insulator structure. In one example, the stressed buried insulator (BOX) may be formed on a host wafer by forming silicon oxide, silicon nitride and silicon oxide layers so that the silicon nitride layer is compressively stressed. Wafer bonding provides the surface silicon... Agent: Acorn Technologies, Inc.

20120049284 - Same-chip multicharacteristic semiconductor structures: In one exemplary embodiment, a semiconductor structure includes: a semiconductor-on-insulator substrate with a top semiconductor layer overlying an insulation layer and the insulation layer overlies a bottom substrate layer; at least one first device at least partially overlying and disposed upon a first portion of the top semiconductor layer, where... Agent: International Business Machines Corporation

20120049286 - Gate electrodes of a semiconductor device formed by a hard mask and double exposure in combination with a shrink spacer: When forming complex gate electrode structures, a double exposure double etch strategy may be applied, in which the lateral distance in the width direction of the gate electrode structures may be defined prior to forming mask features for defining the gate length. In this case, the width dimension of the... Agent: Globalfoundries Inc.

20120049285 - Semiconductor device and method of fabricating the same: A method of fabricating a semiconductor device and a semiconductor device are provided. The method includes method of fabricating a semiconductor device including providing a semiconductor substrate having a first semiconductor device region and a second semiconductor device region defined therein, forming a first gate structure in the first semiconductor... Agent:

20120049287 - Trench isolation mos p-n junction diode device and method for manufacturing the same: A trench isolation metal-oxide-semiconductor (MOS) P-N junction diode device and a manufacturing method thereof are provided. The trench isolation MOS P-N junction diode device is a combination of an N-channel MOS structure and a lateral P-N junction diode, wherein a polysilicon-filled trench oxide layer is buried in the P-type structure... Agent: Pfc Device Corporation

20120049289 - Semiconductor device: A semiconductor device includes pMISFET and nMIS formed on the semiconductor substrate. The pMISFET includes, on the semiconductor substrate, first source/drain regions, a first gate dielectric formed therebetween, first lower and upper metal layers stacked on the first gate dielectric, a first upper metal layer containing at least one metallic... Agent:

20120049290 - Semiconductor device: In order to reduce parasitic inductance of a main circuit in a power supply circuit, a non-insulated DC-DC converter is provided having a circuit in which a power MOS•FET for a high-side switch and a power MOS•FET for a low-side switch are connected in series. In the non-insulated DC-DC converter,... Agent:

20120049288 - Semiconductor integrated circuit device and manufacturing method thereof: The present invention is that, in a manufacturing method of a CMOS integrated circuit device, a titanium-based nitride film for adjusting the electrical properties of a high-permittivity gate insulation film before a gate electrode film is formed includes a lower film containing a comparatively large quantity of titanium and an... Agent: Renesas Electronics Corporation

20120049291 - Polysilicon resistors formed in a semiconductor device comprising high-k metal gate electrode structures: In sophisticated semiconductor devices, resistors may be provided together with high-k metal gate electrode structures by using a polycrystalline silicon material without requiring a deterioration of the crystalline nature and thus conductivity of a conductive metal-containing cap material that is used in combination with the high-k dielectric gate material. In... Agent: Globalfoundries Inc.

20120049292 - Semiconductor integrated circuit and semiconductor integrated circuit apparatus: A semiconductor integrated circuit includes a substrate of a first conductivity type, and a first MOS transistor and a second MOS transistor both formed in the substrate. The first MOS transistor includes first drain and first source regions as first active regions of a second conductivity type; a second active... Agent: Ricoh Company, Ltd.

20120049293 - Reduced threshold voltage-width dependency in transistors comprising high-k metal gate electrode structures: Performance and/or uniformity of sophisticated transistors may be enhanced by incorporating a carbon species in the active regions of the transistors prior to forming complex high-k metal gate electrode structures. For example, a carbon species may be incorporated by ion implantation into the active region of a P-channel transistor and... Agent: Globalfoundries Inc.

20120049294 - Forming crown active regions for finfets: A device includes a plurality of intra-device insulation regions having a first height; and a plurality of semiconductor fins horizontally spaced apart from each other by the plurality of intra-device insulation regions. A portion of the plurality of semiconductor fins is disposed above the plurality of intra-device insulation regions. The... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120049295 - Method to reduce threshold voltage variability with through gate well implant: The present disclosure provides a semiconductor device that may include a substrate including a semiconductor layer overlying an insulating layer. A gate structure that is present on a channel portion of the semiconductor layer. A first dopant region is present in the channel portion of the semiconductor layer, in which... Agent: International Business Machines Corporation

20120049296 - Oxide deposition by using a double liner approach for reducing pattern density dependence in sophisticated semiconductor devices: A silicon dioxide material may be provided in sophisticated semiconductor devices in the form of a double liner including an undoped silicon dioxide material in combination with a high density plasma silicon dioxide, thereby providing reduced dependency on pattern density. In some illustrative embodiments, the silicon dioxide double liner may... Agent: Globalfoundries Inc.

20120049297 - Semiconductor device: A gate insulating film includes an oxygen-containing insulating film and a high dielectric constant insulating film formed on the oxygen-containing insulating film and containing a first metal. The high dielectric constant insulating film further includes a second metal different from the first metal. Part of the high dielectric constant insulating... Agent: Panasonic Corporation

20120049298 - Mems device assembly and method of packaging same: A MEMS device assembly (20) includes a MEMS die (22) and an integrated circuit (IC) die (24). The MEMS die (22) includes a MEMS device (36) formed on a substrate (38) and a cap layer (34). A packaging process (72) entails forming the MEMS device (36) on the substrate (38)... Agent: Freescale Semiconductor, Inc.

20120049299 - Composite wafer semiconductor: A composite wafer semiconductor device includes a first wafer and a second wafer. The first wafer has a first side and a second side, and the second side is substantially opposite the first side. The composite wafer semiconductor device also includes an isolation set is formed on the first side... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120049301 - Method for producing a micromechanical component having a trench structure for backside contact: A method for manufacturing a micromechanical component is proposed. In this context, at least one trench structure having a depth less than the substrate thickness is to be produced in a substrate. In addition, an insulating layer and a filler layer are produced or applied on a first side of... Agent:

20120049300 - Sensor apparatus and method for mounting semiconductor sensor device: A sensor apparatus includes a semiconductor sensor device including a first attachment surface, a base part being wire-bonded to the semiconductor sensor device and including a second attachment surface, and a spacer being interposed between the first and second attachment surfaces and having a target attachment surface to which at... Agent: Mitsumi Electric Co., Ltd.

20120049302 - Magneto-resistance effect element, magnetic head, magnetic recording/reproducing device and magnetic memory: A magneto-resistance effect element includes: a first magnetization layer of which a magnetization is substantially fixed in one direction; a second magnetization layer of which a magnetization is rotated in accordance with an external magnetic field; an intermediate layer which contains insulating portions and magnetic metallic portions and which is... Agent: Kabushiki Kaisha Toshiba

20120049303 - Semiconductor device: A semiconductor device includes a Hall element, which is switched between a first and second mode. In the first mode, connection A between a first and second resistor and connection C between a third and fourth resistor are set to Vcc or GND. Connection D between the first and fourth... Agent: On Semiconductor Trading, Ltd.

20120049304 - Thin-wafer current sensors: Embodiments relate to IC current sensors fabricated using thin-wafer manufacturing technologies. Such technologies can include processing in which dicing before grinding (DBG) is utilized, which can improve reliability and minimize stress effects. While embodiments utilize face-up mounting, face-down mounting is made possible in other embodiments by via through-contacts. IC current... Agent:

20120049307 - Image sensor chip package and method for forming the same: A method for forming an image sensor chip package includes: providing a substrate having predetermined scribe lines defined thereon, wherein the predetermined scribe lines define device regions and each of the device regions has at least a device formed therein; disposing a support substrate on a first surface of the... Agent:

20120049305 - Solid-state imaging device and electronic apparatus: A solid-state imaging device includes: photoelectric conversion units disposed in the form of matrix in an imaging region and a peripheral region around the imaging region; transfer electrodes provided on a side of the photoelectric conversion units arranged in the vertical direction of the matrix; and first-layer wirings and second-layer... Agent: Sony Corporation

20120049306 - Solid-state imaging element, method of manufacturing the same, solid-state imaging apparatus, and imaging apparatus: A solid-state imaging element includes a semiconductor substrate that has a light reception portion performing a photoelectric conversion of an incident light; an oxide layer that is formed on a surface of the semiconductor substrate; a light shielding layer that is formed on an upper layer further than the oxide... Agent: Sony Corporation

20120049308 - Triazine ring-containing polymer and film-forming composition comprising same: A polymer containing a triazine ring-containing repeating unit structure represented by, for example, formula (23) or (24), which alone can achieve high heat resistance, high transparency, high refraction index, high solubility and low volume shrinkage, without adding a metal oxide.... Agent:

20120049309 - Smartcard integrated with a fingerprint image acquisition sensor and a method for manufacturing the smartcard: A smartcard comprising a core substrate which is configured with a film substrate 21 on which a fingerprint image acquisition sensor IC chip 11, an electric circuit pattern and accompanying electrical, and a reinforcing metal or composite plate 1 which is adhered to the back surface of the fingerprint image... Agent:

20120049310 - Thin film photoelectric conversion module and fabrication method of the same: A thin film photoelectric conversion module is provided. The thin film photoelectric conversion module includes a substrate and a plurality of photoelectric conversion cells formed on the substrate and connected to each other in series to form a series-connected array. The thin film photoelectric conversion module further comprises a plurality... Agent: Du Pont Apollo Limited

20120049311 - Materials, systems and methods for optoelectronic devices: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically... Agent: Invisage Technologies, Inc.

20120049312 - Manufacturing method of semiconductor device, semiconductor substrate, and camera module: According to an embodiment, an active layer is formed on a first surface of a semiconductor substrate, a wiring layer is formed on the active layer, and an insulating layer is formed covering the wiring layer. The first surface of the semiconductor substrate is bonded to a support substrate via... Agent: Kabushiki Kaisha Toshiba

20120049314 - Thermoelectric module and method for fabricating the same: The present invention relates to a thermoelectric module. The thermoelectric module includes a first substrate and a second substrate opposed to each other and arranged to be separated from each other, a first electrode and a second electrode arranged in the inside surfaces of the first and the second substrates,... Agent: Samsung Electro-mechanics Co., Ltd.

20120049315 - Thermoelectric module and method for fabricating the same: The present invention provides a thermoelectric module. The thermoelectric module includes a first substrate and a second substrate opposed to each other and arranged to be separated from each other, a first electrode and a second electrode arranged in an inside surface of the first and the second substrates, respectively,... Agent: Samsung Electro-michanics Co., Ltd

20120049316 - Thermoelectric module and method for fabricating the same: The present invention provides a thermoelectric module. The thermoelectric module includes a first substrate and a second substrate opposed to each other and arranged to be separated from each other, a first electrode and a second electrode arranged in the inside surfaces of the first and the second substrates, respectively,... Agent: Samsung Electro-mechanics Co., Ltd.

20120049313 - Uncooled infrared image sensor: An uncooled infrared image sensor according to an embodiments includes: a plurality of pixel cells formed in a first region on a semiconductor substrate; a reference pixel cell formed in a second region on the semiconductor substrate and corresponding to each row or each column of the pixel cells; a... Agent: Kabushiki Kaisha Toshiba

20120049317 - Semiconductor-on-insulator (soi) structures including gradient nitrided buried oxide (box): A semiconductor-on-insulator structure includes a buried dielectric layer interposed between a base semiconductor substrate and a surface semiconductor layer. The buried dielectric layer comprises an oxide material that includes a nitrogen gradient that peaks at the interface of the buried dielectric layer with at least one of the base semiconductor... Agent: International Business Machines Corporation

20120049318 - Semiconductor device and manufacturing method thereof: To provide, in a semiconductor device formed on an SOI substrate and having a semiconductor layer of the SOI substrate surrounded, at the periphery of the element region thereof, with element isolation, a technology capable of preventing reliability deterioration attributed to the element isolation. Appearance of a hollow, which is... Agent: Renesas Electronics Corporation

20120049319 - Parasitic pin device in a bicmos process and manufacturing method of the same: A parasitic PIN device in a BiCMOS process is disclosed. The device is formed on a silicon substrate, in which an active region is isolated by shallow trenches. The device includes: an N-type region, consisting of N-type pseudo buried layers respectively formed at the bottom of shallow trench isolation oxide... Agent:

20120049320 - Electronic device including a feature in a trench: A semiconductor substrate can be patterned to define a trench and a feature. In an embodiment, the trench can be formed such that after filling the trench with a material, a bottom portion of the filled trench may be exposed during a substrate thinning operation. In another embodiment, the trench... Agent:

20120049321 - Programmable electrical fuse: The present invention relates to e-fuse devices, and more particularly to a device and method of forming an e-fuse device, the method comprising providing a first conductive layer connected to a second conductive layer, the first and second conductive layers separated by a barrier layer having a first diffusivity different... Agent: International Business Machines Corporation

20120049322 - Cylindrical embedded capacitors: A device includes a substrate having a front surface and a back surface opposite the front surface. A capacitor is formed in the substrate and includes a first capacitor plate; a first insulation layer encircling the first capacitor plate; and a second capacitor plate encircling the first insulation layer. Each... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120049323 - Lateral connection for a via-less thin film resistor: The present disclosure is directed to an integrated circuit having a substrate and a first and a second interconnect structure over the substrate. Each interconnect structure has a first conductive layer over the substrate and a second conductive layer over the first conductive layer. The integrated circuit also includes a... Agent: Stmicroelectronics Asia Pacific Pte Ltd.

20120049324 - Multi-layer via-less thin film resistor: The present disclosure is directed to a thin film resistor having a first resistor layer having a first temperature coefficient of resistance and a second resistor layer on the first resistor layer, the second resistor layer having a second temperature coefficient of resistance different from the first temperature coefficient of... Agent: Stmicroelectronics Asia Pacific Pte, Ltd.

20120049325 - Integrated circuit having a semiconductor arrangement and method for producing it: An integrated circuit having a semiconductor component arrangement and production method is disclosed. In one embodiment, an oxide layer region is provided as a protection against oxidation in the edge region on the surface region of an underlying semiconductor material region.... Agent: Infineon Technologies Austria Ag

20120049326 - High holding voltage bjt clamp with embedded reverse path protection in bcd process: In the case of adjacent high voltage nodes in which one node is protected by a lateral BJT clamp, the irreversible burnout due to transient latch-up between the two adjacent high voltage pins of the structure is avoided by increasing the base contact region by including a sinker connected to... Agent: National Semiconductor Corporation

20120049327 - Vertical parasitic pnp device in a bicmos process and manufacturing method of the same: The invention discloses a vertical parasitic PNP transistor in a BiCMOS process and manufacturing method of the same, wherein an active region is isolated by STIs. The transistor includes a collector region, a base region, an emitter region, pseudo buried layers, and N-type polysilicon. The pseudo buried layers, formed at... Agent:

20120049328 - Method of manufacturing p-type nitride semiconductor and semiconductor device fabricated by the method: The present invention includes a first step of forming a nitride semiconductor layer by metal organic chemical vapor deposition by using a first carrier gas containing a nitrogen carrier gas and a hydrogen carrier gas of a flow quantity larger than that of the nitrogen carrier gas to thereby supply... Agent:

20120049329 - Method of analyzing iron concentration of boron-doped p-type silicon wafer and method of manufacturing silicon wafer: An aspect of the present invention relates to a method of analyzing an iron concentration of a boron-doped p-type silicon wafer by a SPV method, which comprises subjecting the wafer to Fe—B pair separation processing by irradiation with light and determining the iron concentration based on a change in a... Agent: Sumco Corporation

20120049330 - Silicon wafer and method for producing the same: A method of producing a silicon wafer comprises the steps of subjecting a silicon wafer, which has been sliced from a silicon single crystal ingot grown by the Czochralski method, to RTA treatment in a nitriding gas atmosphere; forming an oxide film on a surface of either side of the... Agent: Sumco Corporation

20120049331 - Semiconductor device, method for manufacturing same, and semiconductor apparatus: According to one embodiment, a semiconductor device includes a semiconductor device body and an insulating adhesive layer. The semiconductor device body is formed with a square plate shape and has an element portion provided on a first major surface. The insulating adhesive layer is provided to cover a second major... Agent: Kabushiki Kaisha Toshiba

20120049332 - Semiconductor package and method for manufacturing the same: A semiconductor package and method for making the same are provided, wherein a lower chip having a plurality of conductive structures is bonded to an upper surface of a package substrate and a plurality of matrix walls are formed on the upper surface for surrounding the lower chip, such that... Agent: Advanced Semiconductor Engineering, Inc.

20120049333 - Hybrid multilayer substrate: A hybrid multilayer substrate in an electronic package. The substrate includes a first portion having m layers and a second portion having n layers such that m is less than n. The first portion has a first height and the second portion has a second height. The first height is... Agent: Qualcomm Incorporated

20120049334 - Semiconductor device and method of forming leadframe as vertical interconnect structure between stacked semiconductor die: A semiconductor device has a first semiconductor die mounted over a carrier. A leadframe has a plurality of conductive leads and first and second bodies extending from the opposite sides of the conductive leads. The leadframe is mounted to the carrier with the conductive lead disposed over the first semiconductor... Agent: Stats Chippac, Ltd.

20120049337 - Semiconductor device: A non-insulated DC-DC converter has a power MOSFET for a highside switch and a power MOS•ET for a lowside switch. In the non-insulated DC-DC converter, the power MOS•ET for the highside switch and the power MOS•ET for the lowside switch, driver circuits that control operations of these elements, respectively, and... Agent:

20120049336 - Semiconductor package for forming a leadframe package: A method is disclosed for attaching an interconnection plate to semiconductor die within leadframe package. A base leadframe is provided with die pad for attaching semiconductor die. An interconnection plate is provided for attachment to the base leadframe and semiconductor die. Add a base registration feature onto base leadframe and... Agent:

20120049335 - Singulation method for semiconductor package with plating on side of connectors: A method of singulating semiconductor packages, the method comprising: providing a plurality of semiconductor dies coupled to a single common leadframe, wherein a molding compound at least partially encases the semiconductor dies and the leadframe; singulating the plurality of semiconductor dies, wherein the leadframe is at least partially cut between... Agent: Utac Thai Limited

20120049338 - Stackable semiconductor device packages: In one embodiment, a semiconductor device package includes: (1) a substrate unit; (2) connecting elements disposed adjacent to a periphery of the substrate unit and extending upwardly from an upper surface of the substrate unit; (3) a semiconductor device disposed adjacent to the upper surface of the substrate unit and... Agent:

20120049340 - Manufacturing method of semiconductor device: When a semiconductor device having a surface provided with a flexible protective material is manufactured, the misalignment of the protective material occurs at the time of disposing the protective material or performing adhesion treatment. In the case where the terminal portion over the substrate has a length X of 5... Agent: Semiconductor Energy Laboratory Co., Ltd.

20120049339 - Semiconductor package structure and manufacturing process thereof: A semiconductor package structure including a substrate, a first chip, a second chip, and an interposer is provided. The substrate has a carrying surface and an opposite bottom surface. The first chip disposed on the carrying surface has a first surface and an opposite second surface. The second surface faces... Agent: Advanced Semiconductor Engineering, Inc.

20120049341 - Semiconductor package structures having liquid cooler integrated with first level chip package modules: Semiconductor package structures are provided which are designed to have liquid coolers integrally packaged with first level chip modules. In particular, apparatus for integrally packaging a liquid cooler device within a first level chip package structure include structures in which a liquid cooler device is thermally coupled directly to the... Agent: International Business Machines Corporation

20120049342 - Semiconductor die terminal: A method of making semiconductor die terminals and a semiconductor device with die terminals made according to the present method. At least a first mask layer is selectively printed on at least a portion of a wafer containing a plurality of the semiconductor devices to create first recesses aligned with... Agent: Hsio Technologies, LLC

20120049343 - Conductive connection structure with stress reduction arrangement for a semiconductor device, and related fabrication method: A semiconductor device disclosed herein includes a conductive connection structure having a stepped profile that serves as a stress relief feature. The conductive connection structure includes a stress buffer arrangement for a contact pad. The stress buffer arrangement has a stepped via that terminates at the contact pad, and the... Agent: Globalfoundries Inc.

20120049353 - Low-cost 3d face-to-face out assembly: An electronic device includes first and second electronic device dice. The first electronic device die is embedded within a resin layer. A dielectric layer is located over the device die and the resin layer. First interconnects within the dielectric layer connect a first subset of electrical contacts on the first... Agent:

20120049352 - Multi-chip package and method of manufacturing the same: A multi-chip package may include a package substrate, an interposer chip, a first semiconductor chip, a thermal dissipation structure and a second semiconductor chip. The interposer chip may be mounted on the package substrate. The first semiconductor chip may be mounted on the interposer chip. The first semiconductor chip may... Agent: Samsung Electronics Co., Ltd

20120049348 - Package having elastic members for vias, package on package comprising the same, and methods of fabricating the same: A first semiconductor package includes a first substrate, a first semiconductor chip attached to the first substrate, an encapsulant which covers the first semiconductor chip, and conductive elastic members which are embedded in the encapsulant but with parts thereof exposed. A package on package (POP) includes the first semiconductor package... Agent: Samsung Electronics Co., Ltd.

20120049351 - Package substrate and flip chip package including the same: A package substrate includes an insulating substrate, a functional pattern and a main dummy pattern. A semiconductor chip is arranged on the insulating substrate. The functional pattern is formed on the insulating substrate. The functional pattern is electrically connected to the semiconductor chip. The main dummy pattern is formed on... Agent:

20120049346 - Pillar bumps and process for making same: Apparatus and methods for providing solder pillar bumps. Pillar bump connections are formed on input/output terminals for integrated circuits by forming a pillar of conductive material using plating of a conductive material over terminals of an integrated circuit. A base portion of the pillar bump has a greater width than... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120049355 - Semiconductor apparatus: A semiconductor apparatus in a preferred embodiment includes: a substrate; a first chip provided on the substrate; a solder bump formed on the first chip; a solder dam arranged in substantially a rectangular and annular manner outside around the solder bump on the first chip by alternately connecting four sides... Agent:

20120049349 - Semiconductor chips and methods of forming the same: Provided is a semiconductor chip including a back side insulation structure. The semiconductor chip may include a semiconductor layer including an active surface and an inactive surface facing each other; the insulating layer includes a first surface adjacent to the inactive surface and a second surface facing the first surface.... Agent: Samsung Electronics Co., Ltd.

20120049356 - Semiconductor device and manufacturing method of semiconductor device: According to one embodiment, a semiconductor substrate, a redistribution trace, and a surface layer are provided. On the semiconductor substrate, a wire and a pad electrode are formed. The redistribution trace is formed on the semiconductor substrate. The surface layer is larger in width than the redistribution trace.... Agent: Kabushiki Kaisha Toshiba

20120049357 - Semiconductor device and method of forming a metallurgical interconnection between a chip and a substrate in a flip chip package: A method for forming metallurgical interconnections and polymer adhesion of a flip chip to a substrate includes providing a chip having a set of bumps formed on a bump side thereof and a substrate having a set of interconnect points on a metallization thereon, providing a measured quantity of a... Agent: Stats Chippac, Ltd.

20120049344 - Semiconductor device and method of forming fo-wlcsp with discrete semiconductor components mounted under and over semiconductor die: A semiconductor die has first and second discrete semiconductor components mounted over a plurality of wettable contact pads formed on a carrier. Conductive pillars are formed over the wettable contact pads. A semiconductor die is mounted to the conductive pillars over the first discrete components. The conductive pillars provide vertical... Agent: Stats Chippac, Ltd.

20120049354 - Semiconductor device and method of forming the same: A semiconductor device includes a wiring board, a first semiconductor chip disposed over the wiring board, a stack of second semiconductor chips disposed over the first semiconductor chip; and a first connection structure connecting the first semiconductor chip and the stack of second semiconductor chips. The first connection structure includes... Agent: Elpida Memory, Inc.

20120049347 - Semiconductor structure having conductive vias and method for manufacturing the same: A semiconductor structure includes a plurality of thermal vias and a heat dissipation layer disposed at a periphery of a back surface of a lower chip in a stacked-chip package. This arrangement improves solderability of a subsequently-bonded heat sink. Additionally, the thermal vias and the heat dissipation layer provide an... Agent: Advanced Semiconductor Engineering, Inc.

20120049350 - Stress reduction in chip packaging by using a low-temperature chip-package connection regime: A semiconductor chip and a package substrate may be directly connected on the basis of form closure by providing appropriately shaped complementary contact structures in the semiconductor chip and the package substrate. Consequently, solder material may no longer be required and thus any elevated temperatures during the assembly process may... Agent: Globalfoundries Inc.

20120049345 - Substrate vias for heat removal from semiconductor die: A substrate comprising a plurality of layers, a first side and a second side; and a via extending through the substrate from the first side to the second side. The via comprises: a first substrate via extending through a first layer of the plurality of layers, the first substrate via... Agent: Avago Technologies WirelessIP(singapore) Pte. Ltd.

20120049359 - Ball grid array package: A BGA package comprises a substrate, a chip disposed on the substrate, and a plurality of solder balls disposed under the substrate. The substrate further has a plurality of ball pads and a solder mask having a plurality of openings to expose the ball pads where the ball pads include... Agent:

20120049364 - Emebedded structures and methods of manufacture thereof: Embodiments of the present disclosure provide a method that comprises providing a first die having a surface comprising a bond pad to route electrical signals of the first die and attaching the first die to a layer of a substrate. The method further comprises forming one or more additional layers... Agent:

20120049363 - Package structure: A package structure is provided, which includes a dielectric layer having opposing first and second surfaces, and through holes penetrating the surfaces; a strengthening layer formed on the first surface; a circuit layer formed on the second surface, and having wire bonding pads formed thereon and exposed from the through... Agent: Unimicron Technology Corporation

20120049366 - Package structure having through-silicon-via (tsv) chip embedded therein and fabrication method thereof: A package structure includes a dielectric layer having a first surface and a second surface; a through-silicon-via (TSV) chip embedded in the dielectric layer, wherein the TSV chip has a plurality of conductive TSVs, and electrode pads formed on a surface of the TSV chip that are electrically connected to... Agent: Unimicron Technology Corporation

20120049367 - Semiconductor device and manufacturing method of semiconductor device: According to the embodiment, a pad electrode, a protective film, an under barrier metal film, and an electrode wiring portion are provided. The pad electrode is formed on a semiconductor substrate. The protective film is formed on the semiconductor substrate so that a surface of the pad electrode is exposed.... Agent: Kabushiki Kaisha Toshiba

20120049362 - Semiconductor device and method for manufacturing thereof: A semiconductor device has a first semiconductor chip 10 molded with a resin 12, a first metal 14 provided in the resin 12 in a circumference of the first semiconductor chip 10, and being exposed on a lower surface of the resin 12, a second metal 16 provided in the... Agent:

20120049358 - Semiconductor device and semiconductor process for making the same: The present invention relates to a semiconductor device and a semiconductor process for making the same. The semiconductor device of the present invention includes a semiconductor substrate, at least one conductive via and at least one insulation ring. The semiconductor substrate has a first surface. The conductive via is disposed... Agent:

20120049361 - Semiconductor integrated circuit: A semiconductor integrated circuit includes a semiconductor chip including a memory cell array, a plurality of first through-chip vias configured to vertically penetrate through the semiconductor chip and operate as an interface for a signal and a supply voltage, and a semiconductor substrate. The semiconductor substrate includes a peripheral circuit... Agent:

20120049365 - Semiconductor package: A semiconductor package is provided. The semiconductor package includes a package substrate, a plurality of semiconductor chips, and a plurality of connection terminals. The package substrate includes a center portion, which has a first recess with a portion of a top of the package substrate removed, and an edge portion... Agent:

20120049360 - Semiconductor package and method for making the same: The present invention relates to a semiconductor package and a method for making the same. The semiconductor package includes at least one first layer chip, a plurality of first metal bumps, at least one second layer chip and a package body. The first layer chip includes a first active surface... Agent:

20120049368 - Semiconductor package: A semiconductor package according to the present invention is embedded with a plurality of silicon substrates including semiconductor elements, the semiconductor package including a through-silicon via in a first silicon substrate, in which a base material of a core substrate forming a package substrate has a linear expansion coefficient of... Agent:

20120049370 - Carbon nanotube interconnection and manufacturing method thereof: According to one embodiment, a carbon nanotube interconnection includes a first conductive layer, an insulating film, a catalyst underlying film, a catalyst deactivation film, a catalyst film, and carbon nanotubes. An insulating film is formed on the first conductive layer and including a hole. An catalyst underlying film is formed... Agent: Kabushiki Kaisha Toshiba

20120049371 - Interconnect structure for semiconductor devices: A cap layer for a copper interconnect structure formed in a first dielectric layer is provided. In an embodiment, a conductive layer is located within a dielectric layer and a top surface of the conductive layer has either a recess, a convex surface, or is planar. An alloy layer overlies... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20120049369 - Semiconductor device and method of manufacturing the same: To provide a more reliable semiconductor device including a lower-cost and more reliable capacitor and a method of manufacturing the same. This manufacturing method comprises the steps of: preparing a semiconductor substrate; and forming, over one of the major surfaces of the semiconductor substrate, a first metal electrode including an... Agent: Renesas Electronics Corporation

20120049372 - Top tri-metal system for silicon power semiconductor devices: A titanium-nickel-palladium solderable metal system for silicon power semiconductor devices (10), which may be used for one or both of the anode (20) or cathode (30). The metal system includes an outer layer of palladium (40,70), an intermediate layer of nickel (50,80), and an inner layer of titanium (60,90). For... Agent:

20120049373 - Integrated circuit including interconnect levels: An integrated circuit as described herein includes an upper interconnect level including a continuous upper interconnect area, the continuous upper interconnect area including a plurality of upper contact openings. The integrated circuit further includes a lower interconnect level including a continuous lower interconnect area, the continuous lower interconnect area including... Agent: Infineon Technologies Ag

20120049376 - Manufacturing fixture for a ramp-stack chip package: An assembly component and a technique for assembling a chip package using the assembly component are described. This chip package includes a set of semiconductor dies that are arranged in a stack in a vertical direction, which are offset from each other in a horizontal direction to define a stepped... Agent: Oracle International Corporation

20120049374 - Method and apparatus for memory cell layout: A semiconductor device has first and second interconnect structures in first and second columns, respectively, of an array. Each of the first and second interconnect structures has a reference voltage node and first, second, third, and fourth conductors that are coupled to each other and formed at a first layer,... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20120049375 - Method and system for routing electrical connections of semiconductor chips: A method and a system for routing electrical connections of a plurality of chips are disclosed. In one embodiment, a semiconductor device is provided comprising at least one semiconductor chip, at least one routing plane comprising at least one routing line, and at least one connecting line electrically coupled to... Agent:

20120049381 - Semiconductor device and method for manufacturing the same: A semiconductor device includes: a sensor including a sensor structure on a first side of the sensor and a periphery element surrounding the sensor structure; and a cap covering the sensor structure and having a second side bonded to the first side of the sensor. The cap includes a first... Agent: Denso Corporation

20120049377 - Semiconductor device and method of double photolithography process for forming patterns of the semiconductor device: A semiconductor device and a method of forming patterns on a semiconductor device are disclosed. The semiconductor device may include high-density patterns with a minimum size that may be less the resolution limit of a photolithography process, and may have a substrate including a memory cell region and an adjacent... Agent:

20120049380 - Semiconductor memory device having capacitor and semiconductor device: An example embodiment relates to a semiconductor memory device including a plurality of cylindrical bottom electrodes arranged in a first direction and in a second direction. The device includes a supporting base configured to support the plurality of cylindrical bottom electrodes by contacting side surfaces of the plurality of cylindrical... Agent: Samsung Electronics Co., Ltd.

20120049378 - Semiconductor storage device and a method of manufacturing the semiconductor storage device: According to one embodiment, a semiconductor storage device includes a plate and an external connection terminal. The plate is molded in a resin mold section. A semiconductor memory chip is placed on the plate. The external connection terminal is exposed to the outer circumferential surface of the semiconductor storage device.... Agent: Kabushiki Kaisha Toshiba

20120049379 - Substrate dicing technique for separating semiconductor dies with reduced area consumption: The width of scribe lines may be reduced in semiconductor devices by applying a process technique in which trenches may be formed first from the rear side on the basis of a required width of the corresponding trenches, while subsequently it may be cut into the substrate from the front... Agent: Globalfoundries Inc.

20120049384 - Buffer layer to enhance photo and/or laser sintering: Conductive lines are deposited on a substrate to produce traces for conducting electricity between electronic components. A patterned metal layer is formed on the substrate, and then a layer of material having a low thermal conductivity is coated over the patterned metal layer and the substrate. Vias are formed through... Agent: Applied Nanotech Holdings, Inc.

20120049382 - Bumpless build-up layer package with pre-stacked microelectronic devices: The present disclosure relates to the field of integrated circuit package design and, more particularly, to packages using a bumpless build-up layer (BBUL) designs. Embodiments of the present description relate to the field of fabricating microelectronic packages, wherein a first microelectronic device having through-silicon vias may be stacked with a... Agent:

20120049383 - Re-establishing surface characteristics of sensitive low-k dielectrics in microstructure devices by using an in situ surface modification: Patterning-induced damage of sensitive low-k dielectric materials in semiconductors devices may be restored to a certain degree on the basis of a surface treatment that is performed prior to exposing the device to ambient atmosphere. To this end, the dangling silicon bonds of the silicon oxide-based low-k dielectric material may... Agent: Globalfoundries Inc.

20120049385 - Wafer level chip scale package having an enhanced heat exchange efficiency with an emf shield and a method for fabricating the same: A wafer level chip scale package having an enhanced heat exchange efficiency with an EMF shield is presented. The wafer level chip scale package includes a semiconductor chip, an insulation layer, and a metal plate. The semiconductor chip has a plurality of bonding pads on an upper face thereof. The... Agent: Hynix Semiconductor Inc.

20120049387 - Semiconductor device and method of fabricating the same: A semiconductor device having improved physical and electrical properties includes a semiconductor chip comprising a first semiconductor substrate and a second semiconductor substrate on the first semiconductor substrate, conductive lines embedded in the first semiconductor substrate to be exposed on a surface of the first semiconductor substrate, a circuit structure... Agent: Samsung Electronics Co., Ltd.

20120049386 - Semiconductor package: A semiconductor package includes a package substrate, a semiconductor chip, an insulating layer pattern, conductive connecting members and a contact-preventing member. The semiconductor chip is arranged on an upper surface of the package substrate. The semiconductor chip has bonding pads. The insulating layer pattern is formed on the semiconductor chip... Agent: Samsung Electronics Co., Ltd.

20120049388 - Semiconductor device and method of forming adhesive material over semiconductor die and carrier to reduce die shifting during encapsulation: A semiconductor device has a plurality of semiconductor die mounted to a carrier. An adhesive material is deposited over a portion of the semiconductor die and carrier to secure the semiconductor die to the carrier. The adhesive material is deposited over a side of the semiconductor die and over a... Agent: Stats Chippac, Ltd.

20120049389 - Bond pad for semiconductor die: A semiconductor die has rows of bond pads along the edges of a major surface. The corners of the die are designated as keep out areas, with design layout rules prohibiting a probe-able bond pad from being placed in the keep out areas so that a minimum distance may be... Agent: Freescale Semiconductor, Inc

20120049390 - Electrical component and method of manufacturing the same: According to one embodiment, an electrical component comprises a substrate, an element, a first layer, and a second layer. The element is formed on the substrate. The first layer forms a cavity accommodating the element on the substrate and includes through holes. The second layer is formed on the first... Agent: Kabushiki Kaisha Toshiba