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Active solid-state devices (e.g., transistors, solid-state diodes) December patent applications/inventions, industry category 12/11

20110315942 - Solid-state memory: A solid-state memory that requires a lower current during recording and erasing data and can repeatedly rewrite data an increased number of times. In at least one example embodiment, the solid-state memory includes a recording layer that includes a laminated structure in which electric properties are changed in response to... Agent: National Institute Of Advanced Industrial Science And Technologyy

20110315943 - Memory device using a dual layer conductive metal oxide structure: Memory cell formation using ion implant isolated conductive metal oxide is disclosed, including forming a bottom electrode below un-etched conductive metal oxide layer(s), forming the un-etched conductive metal oxide layer(s) including depositing at least one layer of a conductive metal oxide (CMO) material (e.g., PrCaMnOx, LaSrCoOx, LaNiOx, etc.) over the... Agent: Unity Semiconductor Corporation

20110315944 - Resistive memory and methods of processing resistive memory: Resistive memory and methods of processing resistive memory are described herein. One or more method embodiments of processing resistive memory include conformally forming a cell material in an opening in an interlayer dielectric such that a seam is formed in the cell material, forming a conductive pathway by modifying the... Agent: Micron Technology, Inc.

20110315945 - Method of manufacturing semiconductor memory device: A semiconductor device includes a semiconductor substrate, a non-volatile semiconductor memory element formed over the semiconductor substrate, including a variable resistance element including a laminate comprising a first electrode, a variable resistance layer, and a second electrode, and a volatile semiconductor memory element formed over the semiconductor substrate, including a... Agent: Elpida Memory, Inc.

20110315946 - Nonvolatile memory device: A nonvolatile memory device, including a lower electrode on a semiconductor substrate, a phase change material pattern on the lower electrode, an adhesion pattern on the phase change material pattern and an upper electrode on the adhesion pattern, wherein the adhesion pattern includes a conductor including nitrogen.... Agent: Samsung Electronics Co., Ltd.

20110315947 - Programmable metallization cell structure including an integrated diode, device including the structure, and method of forming same: A microelectronic programmable structure suitable for storing information and array including the structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying energy to the structure,... Agent: Axon Technologies Corporation

20110315948 - Memory device using ion implant isolated conductive metal oxide: Memory cell formation using ion implant isolated conductive metal oxide is disclosed, including forming a bottom electrode below unetched conductive metal oxide layer(s), forming the unetched conductive metal oxide layer(s) including depositing at least one layer of a conductive metal oxide (CMO) material (e.g., PrCaMnOx, LaSrCoOx, LaNiOx, etc.) over the... Agent: Unity Semiconductor Corporation

20110315949 - Apparatus and method for sensing photons: In accordance with an example embodiment of the present invention, an apparatus is provided, including a plurality of photon sensing layers arranged on top of each other, and an intermediate layer between each two adjacent sensing layers, the sensing layers being of graphene, and each intermediate layer being configured to... Agent: Nokia Corporation

20110315951 - Method for forming a catalyst suitable for growth of carbon nanotubes: The present disclosure is related to a method for forming a catalyst nanoparticle on a metal surface, the nanoparticle being suitable for growing a single nanostructure, in particular a carbon nanotube, the method comprising at least the steps of: providing a substrate, having a metal layer on at least a... Agent: Imec

20110315950 - Nanowire fet with trapezoid gate structure: In one embodiment, a method of providing a nanowire semiconductor device is provided, in which the gate structure to the nanowire semiconductor device has a trapezoid shape. The method may include forming a trapezoid gate structure surrounding at least a portion of a circumference of a nanowire. The first portion... Agent: International Business Machines Corporation

20110315956 - Electronic devices with yielding substrates: In accordance with certain embodiments, a semiconductor die is adhered directly to a yielding substrate with a pressure-activated adhesive notwithstanding any nonplanarity of the surface of the semiconductor die or non-coplanarity of the semiconductor die contacts.... Agent:

20110315957 - Light emitting device: There is provided a light emitting device of a simpler structure, capable of ensuring a broad light emitting area and a high light emitting efficiency, while manufactured in a simplified and economically efficient process. The light emitting device including: a semiconductor layer; an active layer formed on the semiconductor layer,... Agent: Samsung Led Co., Ltd.

20110315952 - Light-emitting devices with improved active-region: A light-emitting device comprises an active-region sandwiched between an n-type layer and a p-type layer, that allows lateral carrier injection into the active-region so as to reduce heat generation in the active-region and to minimize additional forward voltage increase associated with bandgap discontinuity. In some embodiments, the active-region is a... Agent: Invenlux Corporation

20110315955 - Light-emitting diode and light-emitting diode lamp: A light-emitting diode includes a transparent substrate and a compound semiconductor layer that includes a light-emitting unit and is bonded to the transparent substrate. The light-emitting unit includes a light-emitting layer represented by a composition formula (AlXGa1-X)YIn1-YP (0≦X≦1, 0<Y≦1). A first electrode and a second electrode having a polarity different... Agent: Showa Denko K.k.

20110315953 - Method of forming compound semiconductor: A method of forming a semiconductor is provided and includes patterning a pad and a nanowire onto a wafer, the nanowire being substantially perpendicular with a pad sidewall and substantially parallel with a wafer surface and epitaxially growing on an outer surface of the nanowire a secondary layer of semiconductor... Agent: International Business Machines Corporation

20110315954 - Semiconductor nanocrystal, method of manufacture thereof and articles including the same: A semiconductor nanocrystal including a core including ZnSe, ZnTe, ZnS, ZnO, or a combination comprising at least one of the foregoing, wherein the core has a diameter of about 2 nanometers to about 5 nanometers and an emitted light wavelength of about 405 nanometers to about 530 nanometers; and a... Agent: Samsung Electronics Co., Ltd.

20110315958 - High operating temperature split-off band infrared detector with double and/or graded barrier: A high operating temperature split-off band infrared (SPIP) detector having a double and/or graded barrier on either side of the emitter is provided. The photodetector may include a first and second barrier and an emitter disposed between the first and second barriers so as to form a heterojunction at each... Agent:

20110315959 - Electronic and optoelectronic devices with quantum dot films: Optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit an array of conductive regions; and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the... Agent: Invisage Technologies, Inc.

20110315960 - Tunnel field effect transistor and method of manufacturing same: A TFET includes a source region (110, 210), a drain region (120, 220), a channel region (130, 230) between the source region and the drain region, and a gate region (140, 240) adjacent to the channel region. The source region contains a first compound semiconductor including a first Group III... Agent:

20110315962 - Nanosensors: Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized Nanodetector devices are described.... Agent: President And Fellows Of Harvard College

20110315961 - Ultrathin spacer formation for carbon-based fet: A method for formation of a carbon-based field effect transistor (FET) includes depositing a first dielectric layer on a carbon layer located on a substrate; forming a gate electrode on the first dielectric layer; etching an exposed portion of the first dielectric layer to expose a portion of the carbon... Agent: International Business Machines Corporation

20110315976 - Compounds usable as materials for a hole injection layer or hole transport layer, and organic light-emitting diode using same: The present invention relates to a compound which can be used as a material for a hole injection layer or a hole transporting layer of organic light emitting diodes (OLEDs) or electroluminescent elements. The compound is synthesized into a conductive polymer using liquid polymer ions, and this conductive polymer can... Agent:

20110315968 - Light-emitting element, light-emitting device, display, and electronic device: In the light-emitting element in which a plurality of EL layers is separated from each other by a charge generation layer, provided are an electron relay layer in contact with an anode side of the charge generation region and an electron transport layer in contact with the electron relay layer.... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110315969 - Luminescent device and process of manufacturing the same: In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. Therefore,... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110315965 - Material for organic electroluminescent element, and organic electroluminescent element: An organic electroluminescence device and a material for producing the organic electroluminescence device. The organic electroluminescence device includes an organic thin film layer between a cathode and an anode, the organic thin film layer including one or more layers, in which the organic thin film layer includes one or more... Agent: Idemitsu Kosan Co., Ltd.

20110315975 - Material for use in phosphorescent device and organic electroluminescent device using same: Provided is an organic electroluminescent device (organic EL device), in which the luminous efficiency of the device is improved, driving stability is sufficiently ensured, and the construction of the device is simple. This organic EL device is an organic electroluminescent device, including a light-emitting layer between an anode and a... Agent:

20110315971 - Method for manufacturing organic electroluminescent device: A method for manufacturing an organic electroluminescent device that comprises a substrate, a plurality of organic electroluminescent elements provided on the substrate, and a partition sectioning the plurality of organic electroluminescent elements, in which the plurality of organic electroluminescent elements comprise a light-emitting layer formed by a coating method and... Agent: Sumitomo Chemical Company, Limited

20110315973 - Novel fused polycyclic compound and organic light emitting device: (where at least two of X1 to X4 each represent a group selected from a substituted or unsubstituted aryl group and a substituted or unsubstituted heterocyclic group, and X1 to X4 may be identical to or different from one another, and at least one of Y1 and Y2 represents a... Agent: Canon Kabushiki Kaisha

20110315964 - Novel polymerizable monomer, and material for organic device, hole injection/transport material, material for organic electroluminescent element and organic electroluminescent element each comprising polymer (polymeric compound) of the polymerizable monom: h

20110315963 - Organic el display and method of manufacturing the same: An organic EL display includes: lower electrodes arranged on a substrate to correspond to first organic EL elements of blue and second organic EL elements of any other color, respectively; hole injection/transport layers arranged on the lower electrodes; second organic light-emitting layers of the other color arranged on the hole... Agent: Sony Corporation

20110315970 - Organic el display device and method of manufacturing the same: An organic EL display device includes a first organic EL element which emits light of a first color and a second organic EL element which emits light of a second color that differs from the first color, the first organic EL element and the second organic EL element being arranged... Agent:

20110315966 - Organic electroluminescent display device and manufacturing method thereof: An organic electroluminescent display device (10) includes: a substrate (11); a first electrode (14) which is provided on the substrate (11), and in which at least a surface portion located on an opposite side from the substrate (11) is made of silver or silver alloy; and an organic electroluminescent layer... Agent: Sharp Kabushiki Kaisha

20110315972 - Organic electronic element and its manufacturing method: The present invention provides an organic electronic element manufacturing method which provides a low manufacturing cost and excellent performance stability, and specifically an organic electronic element manufacturing method which provides a low manufacturing cost, and minimizes emission unevenness, lowering of emission efficiency and shortening of lifetime due to deterioration of... Agent: Konica Minolta Holdings, Inc.

20110315977 - Organic electronic panel and method for manufacturing organic electronic panel: Provided is an organic electronic panel wherein warping (deformation) of a metal member is suppressed when the metal member is used as a packaging board, an electrical short-circuit due to the warping is eliminated, and generation of light emission failure and deterioration of power generating performance are eliminated. In the... Agent: Konica Minolta Holdings, Inc.

20110315967 - Organic field effect transistor with improved current on/off ratio and controllable threshold shift: The present invention provides a semiconductor device, especially an organic field effect transistor, comprising a layer comprising a polymer comprising repeating units having a diketopyrrolopyrrole skeleton (DPP polymer) and an acceptor compound having an electron affinity in vacuum of 4.6 eV, or more. The doping of the DPP polymer with... Agent: Basf Se

20110315974 - Organic light-emitting element material, organic light-emitting element and process for producing the same: In the formula (1a), R1 is a hydrogen atom or a methyl group, R2 and R3 are each independently a hydrogen atom or a substituent group and may be bonded to each other to form a ring, R4 is a hydrogen atom, or a substituted or unsubstituted alkyl group, alkenyl... Agent: Showa Denko K.k.

20110315978 - Radiation detector, and a radiographic apparatus having the same: The construction of this invention includes an active matrix substrate, an amorphous selenium layer, a high resistance layer, a gold electrode layer, an insulating layer and an auxiliary plate laminated in this order. In one aspect of the present invention, the insulating layer has an inorganic anion exchanger added thereto... Agent:

20110315982 - Method for producing semiconducting indium oxide layers, indium oxide layers produced according to said method and their use: The present invention relates to a process for producing semiconductive indium oxide layers, in which a substrate is coated with a liquid, anhydrous composition comprising a) at least one indium alkoxide and b) at least one solvent, optionally dried and thermally treated at temperatures greater than 250° C., to the... Agent: Evonik Degussa Gmbh

20110315981 - Microbolometer for infrared detector or terahertz detector and method for manufacturing the same: A microbolometer includes a micro-bridge structure for uncooling infrared or terahertz detectors. The thermistor and light absorbing materials of the micro-bridge structure are the vanadium oxide-carbon nanotube composite film formed by one-dimensional carbon nanotubes and two-dimensional vanadium oxide film. The micro-bridge is a three-layer sandwich structure consisting of a layer... Agent: University Of Electronic Science And Technology Of China

20110315980 - Thin film transistor and method of manufacturing the same: Provided are a Thin Film Transistor (TFT) and a method of manufacturing the same. The TFT includes a gate electrode; a source electrode and a drain electrode spaced from the gate electrode in a vertical direction and spaced from each other in a horizontal direction; a gate insulation layer disposed... Agent:

20110315983 - Thin film transistor having semiconductor active layer: A method of manufacturing an IGZO active layer includes depositing ions including In, Ga, and Zn from a first target, and depositing ions including In from a second target having a different atomic composition from the first target. The deposition of ions from the second target may be controlled to... Agent: Samsung Mobile Display Co., Ltd.

20110315979 - Transistor and semiconductor device: Manufactured is a transistor including an oxide semiconductor layer, a source electrode layer and a drain electrode layer overlapping with part of the oxide semiconductor layer, a gate insulating layer overlapping with the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, and a gate electrode overlapping... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110315987 - Portable memory devices: Improved techniques to produce integrated circuit products are disclosed. The improved techniques permit smaller and less costly production of integrated circuit products. One aspect of the invention concerns covering test contacts (e.g., test pins) provided with the integrated circuit products using printed ink. Once covered with the ink, the test... Agent:

20110315986 - Semiconductor integrated circuit: Whether there is a defect such as chipping of a die or separation of a resin in a wafer level package is electrically detected. A peripheral wiring is disposed along four peripheries of a semiconductor substrate outside a circuit region and pad electrodes P1-P8. The peripheral wiring is formed on... Agent: On Semiconductor Trading, Ltd.

20110315984 - Semiconductor memory card and method of manufacturing the same: According to one embodiment, a semiconductor memory card that includes a printed substrate in which an electronic component is mounted on one surface, and an external terminal is installed on the other surface, and that is molded in a card form. The printed substrate is a laminated body in which... Agent: Kabushiki Kaisha Toshiba

20110315985 - Sensor-fitted substrate and method for producing sensor-fitted substrate: A sensor-fitted substrate allowing a sensor-fitted wafer for measuring the temperature or strain to be produced inexpensively, moreover, allowing measurements of the temperature or strain to be carried out with satisfactory accuracy, and a method for producing such a sensor-fitted substrate. An undercoat film is formed on the surface of... Agent: Kelk Ltd.

20110315988 - Passivated upstanding nanostructures and methods of making the same: Described herein is a device comprising: a substrate; one or more of a nanostructure extending essentially perpendicularly from the substrate; wherein the nanostructure comprises a core of a doped semiconductor, an first layer disposed on the core, and a second layer of an opposite type from the core and disposed... Agent: Zena Technologies, Inc.

20110315991 - Array substrate, liquid crystal panel, liquid crystal display device, and television receiver: An array substrate disclosed herein includes: scanning signal lines (16i and 16j); data signal lines (15x, 15y, 15X, and 15Y) to each of which a data signal is supplied; a first pixel region column; and a second pixel region column adjacent to the first pixel region column, each of the... Agent: Sharp Kabushiki Kaisha

20110315989 - Display device, laser transfer printing method and laser transfer color donor sheet: A display device includes a thin film transistor substrate, a display layer, a patterned color resist layer, a patterned UV block layer and a transparent protective layer. The thin film transistor substrate has a substrate and a plurality of thin film transistors. The display layer is disposed on the thin... Agent: E Ink Holdings Inc.

20110315990 - Semiconductor device, method for manufacturing semiconductor device, and electronic appliance: To provide a semiconductor device in which a channel formation region can be thinned without adversely affecting a source region and a drain region through a simple process and a method for manufacturing the semiconductor device. In the method for manufacturing a semiconductor device, a semiconductor film, having a thickness... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110315992 - Plasma-enhanced chemical vapor deposition of crystalline germanium: In a method of depositing a crystalline germanium layer on a substrate, a substrate is placed in the process zone comprising a pair of process electrodes. In a deposition stage, a crystalline germanium layer is deposited on the substrate by introducing a deposition gas comprising a germanium-containing gas into the... Agent: Applied Materials, Inc.

20110315994 - Display device and method of manufacturing the same: A method of manufacturing a display device includes forming a gate electrode on a substrate, a gate insulating layer on the gate electrode, and an active layer on the gate insulating layer, the gate electrode made of extrinsic polycrystalline silicon, the active layer made of intrinsic polycrystalline silicon; forming an... Agent: Lg Display Co., Ltd.

20110315993 - Light emitting device and method of manufacturing the same: There is provided a light emitting device in which low power consumption can be realized even in the case of a large screen. The surface of a source signal line or a power supply line in a pixel portion is plated to reduce a resistance of a wiring. The source... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110315995 - Semiconductor device and method for manufacturing same: Disclosed is a semiconductor device which includes a substrate 11, a thin film transistor 20 having a first semiconductor layer 16A that is supported by the substrate 11, a thin film diode 30 having a second semiconductor layer 16B that is supported by the substrate 11, and a metal layer... Agent: Sharp Kabushiki Kaisha

20110315998 - Epitaxial wafer, method for manufacturing gallium nitride semiconductor device, gallium nitride semiconductor device and gallium oxide wafer: A gallium nitride based semiconductor device is provided which includes a gallium nitride based semiconductor film with a flat c-plane surface provided on a gallium oxide wafer. A light emitting diode LED includes a gallium oxide support base 32 having a primary surface 32a of monoclinic gallium oxide, and a... Agent: Sumitomo Electric Industries, Ltd.

20110315999 - Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices: A gallium and nitrogen containing optical device has a base region and no more than three major planar side regions configured in a triangular arrangement provided from the base region.... Agent: Soraa, Inc.

20110315997 - Gan substrate and method of its manufacture, method of manufacturing gan layer-bonded substrate, and method of manufacturing semiconductor device: The present invention makes available a GaN substrate, and a method of its manufacture, that, with minimal machining allowances, facilitates consistent machining, and makes available a method of manufacturing a GaN layer-bonded substrate, and a semiconductor device, utilizing the GaN substrate. A GaN substrate (20) of the present invention includes... Agent: Sumitomo Electric Industries Ltd.

20110316000 - Manufacturing of low defect density free-standing gallium nitride substrates and devices fabricated thereof: The invention relates to a method for manufacturing a single crystal of nitride by epitaxial growth on a support (100) comprising a growth face (105), the method comprising the steps of formation of a sacrificial bed (101) on the support (100), formation of pillars (102) on said sacrificial bed, said... Agent: Saint-gobain Cristaux & Detecteurs

20110316001 - Method for growing group iii-v nitride film and structure thereof: A method for growing a Group III-V nitride film and a structure thereof are presented. The method is carried out by hydride vapor phase epitaxy (HVPE). The method includes the steps of, inter alia, slowly epitaxially growing a temperature ramping nitride layer on a substrate by rising a first growth... Agent: National Chiao Tung University

20110315996 - Semiconductor device, light emitting device and method of manufacturing same: Disclosed are a semiconductor device, a light emitting device, and a method of manufacturing the same. The semiconductor device includes a substrate, a plurality of rods aligned on the substrate, a metal layer disposed on the substrate between the rods, and a semiconductor layer disposed on and between the rods.... Agent:

20110316002 - Cmos image sensor: A complementary metal-oxide-semiconductor (CMOS) image sensor, including a wiring layer, a photodiode stacked with the wiring layer, a micro-lens stacked on the photodiode, an anti-reflection layer stacked on the photodiode. An anti-absorption layer may be provided between the photodiode and the anti-reflection layer. The photodiode may include a first portion... Agent:

20110316003 - Multilayered semiconductor wafer and process for manufacturing the same: Silicon carbide substrate wafers are prepared by transferring a monocrystalline silicon layer from a donor wafer onto a handle wafer, the silicon layer being implanted with carbon and annealed to form a monocrystalline SiC layer prior to or after transfer of the silicon layer.... Agent: Siltronic Ag

20110316004 - Light emitting device: The embodiment relates to a light emitting device and a method for manufacturing the same. The light emitting device includes a substrate, a plurality of convex portions protruding from a flat top surface of the substrate, a first semiconductor layer on the substrate, an active layer on the first semiconductor... Agent: Lg Innotek Co., Ltd.

20110316005 - Display apparatus: In a liquid crystal display apparatus (1) including a touch panel, a liquid crystal panel (display portion) (2) having a plurality of pixels, and a backlight device (backlight portion) (3) that irradiates the liquid crystal panel (2) with illumination light, the touch panel includes optical sensors (25) that are provided... Agent: Sharp Kabushiki Kaisha

20110316007 - Display device: A display device includes, on a substrate, light emitting elements each formed by sequentially stacking a first electrode layer, an organic layer including a light emission layer, and a second electrode layer and arranged in first and second directions which cross each other, a drive circuit including drive elements that... Agent: Sony Corporation

20110316008 - Flat panel display: According to one embodiment, a flat panel display includes a first mounting portion including a first input pad and a first output pad, a second mounting portion including a second input pad and a second output pad, a first common terminal and a second common terminal, which have a common... Agent:

20110316011 - Light emitting device, light emitting device unit, and method for fabricating light emitting device: In a light emitting device, a light emitting device unit, and a method for fabricating a light emitting device according to an embodiment of the present invention, a light emitting device (100) includes a substrate (131), a semiconductor light emitting element (121) disposed on the substrate (131), and a resistor... Agent:

20110316009 - Light-emitting device: A light-emitting device includes a substrate, and a plurality of light-emitting arrays or light-emitting groups arranged on the substrate. The light-emitting arrays or light-emitting groups include a plurality of LED elements connected in parallel with a pair of adjacent electrodes. The number of the LED elements constituting each of the... Agent: Citizen Electronics Co., Ltd.

20110316010 - Liquid crystal display device and television set: Provided is a liquid crystal display device, including: a liquid crystal display panel; and a backlight unit, in which: the backlight unit includes: a plurality of light emitting diodes each having an anode and a cathode; a first substrate; and a second substrate, the plurality of light emitting diodes being... Agent: Hitachi Displays, Ltd.

20110316013 - Oleds connected in series: OLED device (1) comprising a substrate (4) with multiple light emitting OLED segments (5, 6, 7) on top of the substrate (4) each comprising an electroluminescent layer stack (6) of at least an organic light-emitting layer sandwiched between a substrate electrode (5) facing towards the substrate (4) and a counter... Agent: Koninklijke Philips Electronics N.v.

20110316012 - Organic light emitting diode segment: The invention relates to an organic light emitting diode segment (100) comprising two organic light emitting diodes (102; 104), wherein the organic light emitting diodes are vertically stacked with their conducting directions pointing in opposed directions, wherein in the stack the organic light emitting diodes (102; 104) are electrically connected... Agent: Koninklijke Philips Electronics N.v.

20110316006 - Surface-textured encapsulations for use with light emitting diodes: Surface-textured encapsulations for use with light emitting diodes. In an aspect, a light emitting diode (LED) array apparatus includes a plurality of LEDs mounted to a substrate and an encapsulation covering the LEDs and having a surface texturing configured to extract light, wherein the surface texturing is includes at least... Agent:

20110316014 - Led module and led lighting device: An LED module includes a substrate including a main surface and a rear surface that are opposed to each other. The LED module also includes a plurality of LED chips arranged on the main surface, a drive circuit chip that is provided on the substrate and that is provided for... Agent: Rohm Co., Ltd.

20110316015 - Package for a light emitting element: A high-brightness LED module includes a substrate with a recess in which a light emitting element is mounted. The recess is defined by a sidewalls and a relatively thin membrane. At least two micro-vias are provided in the membrane and include conductive material that passes through the membrane. A p-contact... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110316016 - Led chip package structure: An LED chip package structure includes a substrate; a first circuit pattern disposed on a surface of the substrate, wherein the first circuit pattern is divided into an electrical connection portion and a carrier portion; a second circuit pattern disposed on another surface of the substrate; a plurality of vias... Agent:

20110316017 - Wafer-type light emitting device having precisely coated wavelength-converting layer: The invention relates to a wafer-type light emitting device having a substrate, one or more light emitting semiconductors formed on the substrate, one or more frames provided over the one or more light emitting semiconductors, and one or more wavelength-converting layers applied on the one or more light emitting semiconductors... Agent: Semileds Optoelectronics Co., Ltd., A Taiwanese Corporation

20110316018 - Engineering emission wavelengths in laser and light emitting devices: A light emitting device is provided that includes at least one first semiconductor material layers and at least one second semiconductor material layers. At least one near-direct band gap material layers are positioned between the at least one first semiconductor layers and the at least one second semiconductor material layers.... Agent:

20110316020 - Epitaxial wafer for light emitting diode: An epitaxial wafer for a light emitting diode, including a GaAs substrate, a light emitting unit provided on the GaAs substrate, and a strain adjustment layer provided on the light emitting unit, wherein the light emitting unit has a strained light emitting layer having a composition formula of (AlXGa1-X)YIn1-YP (wherein... Agent: Showa Denko K.k.

20110316019 - Nanoelectronic structure and method of producing such: The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection... Agent: Qunano Ab

20110316027 - Chip-type light emitting device having precisely coated wavelength-converting layer and packaged structure thereof: The invention relates to a chip-type light emitting device including one or more light emitting semiconductors and one or more frames provided over a top of the one or more light emitting semiconductors.... Agent: Semileds Optoelectronics Co., Ltd., A Taiwanese Corporation

20110316021 - Epitaxial growth method and devices: Epitaxial growth methods and devices are described that include a textured surface on a substrate. Geometry of the textured surface provides a reduced lattice mismatch between an epitaxial material and the substrate. Devices formed by the methods described exhibit better interfacial adhesion and lower defect density than devices formed without... Agent:

20110316024 - Led package: An LED package includes a transparent substrate, an LED die, and an encapsulating layer. The transparent substrate has a first surface defining a recess therein, a second surface opposite to the first surface, and a lateral surface interconnecting the first and second surfaces. The LED die is arranged on the... Agent: Advanced Optoelectronic Technology, Inc.

20110316022 - Led package with efficient, isolated thermal path: Packages for containing one or more light emitting devices, such as light emitting diodes (LEDs), are disclosed with an efficient, isolated thermal path. In one embodiment, LED package can include a thermal element and at least one electrical element embedded within a body. The thermal element and electrical element can... Agent:

20110316025 - Light emitting device: A light emitting device includes a light emitting element, a first phosphor which emits a light by being excited by a light emitted from the light emitting element and a second phosphor which emits a light by being excited by the light emitted from the light emitting element and/or the... Agent: Panasonic Electric Works Co., Ltd.

20110316026 - Light emitting diode: An exemplary embodiment of the present invention relates to a light emitting diode (LED) including a substrate, a first nitride semiconductor layer arranged on the substrate, an active layer arranged on the first nitride semiconductor layer, a second nitride semiconductor layer arranged on the active layer, a third nitride semiconductor... Agent: Seoul Opto Device Co., Ltd.

20110316033 - Light emitting module, method of manufacturing the light emitting module, and lamp unit: In a light emitting module, a light wavelength conversion member 60 is formed in a plate shape and converts the wavelength of blue light to emit yellow light. The buffer layer 82 has translucency and is formed on the light wavelength conversion member 60. A semiconductor layer 84 undergoes crystal... Agent: Koito Manufacturing Co., Ltd.

20110316023 - Light-emitting device having a ramp: A light-emitting device includes a light-emitting stacked layer having an active layer, and a composite substrate located under the light-emitting stacked layer. The composite substrate includes a supportive substrate having a top surface and a bottom surface non-parallel to the active layer; a metal substrate located under the supportive substrate;... Agent: Epistar Corporation

20110316029 - Method for treating inside surface of glass container and glass container: The problem is solved by fusing one end of a rod lens to an end surface of an optical fiber, and by fusing a prism to another end of the rod lens. The prism has a basic shape including a planar light emitting surface parallel to an axis formed by... Agent:

20110316028 - Optoelectronic semiconductor component: An optoelectronic semiconductor component comprising a semiconductor layer sequence (3) based on a nitride compound semiconductor and containing an n-doped region (4), a p-doped region (8) and an active zone (5) arranged between the n-doped region (4) and the p-doped region (8) is specified. The p-doped region (8) comprises a... Agent: Osram Opto Semiconductors Gmbh

20110316032 - Phosphor layer and light-emitting device: A phosphor layer is composed of a resin in which phosphor particles and light scattering particles are dispersed.... Agent: Nitto Denko Corporation

20110316030 - Semiconductor light emitting diode and method of producing the same: A semiconductor light emitting diode comprising: a support substrate; an intermediate layer including an intermediate electrode portion, a second conductive semiconductor layer, an active layer, a first conductive semiconductor layer and an upper electrode portion sequentially disposed on the upper surface side of the support substrate in this order; and... Agent: Dowa Electronics Materials Co., Ltd.

20110316031 - Transfer sheet for phosphor layer and light-emitting device: A transfer sheet for a phosphor layer includes a release substrate, a phosphor layer formed on the release substrate, and an adhesive layer formed on the phosphor layer.... Agent: Nitto Denko Corporation

20110316035 - Heat dissipating substrate and method of manufacturing the same: Disclosed is a heat-dissipating substrate, which includes a base substrate including a metal layer, an insulating layer formed on one surface of the metal layer, and a circuit layer formed on the insulating layer, a heat sink layer formed on the other surface of the metal layer, a connector for... Agent: Samsung Electro-mechanics Co., Ltd.

20110316036 - Light emitting device and semiconductor wafer: According to one embodiment, a light emitting device includes a substrate, a bonding layer, a plurality of protrusions, a first electrode, a translucent resin layer, and a first overcoat electrode. The bonding layer is provided on the substrate. The plurality of protrusions is provided on the bonding layer and includes... Agent: Kabushiki Kaisha Toshiba

20110316037 - Semiconductor light emission element: A semiconductor light emission element (1) includes: a substrate (110); multi-layered semiconductor layers (100) including a light emission layer (150) and layered on the substrate (110); a transparent electrode (170) including an indium oxide and layered on the multi-layered semiconductor layers (100); a first junction layer (190) including tantalum as... Agent: Showa Denko K.k.

20110316034 - Side by side light emitting diode (led) having separate electrical and heat transfer paths and method of fabrication: A light emitting diode includes a thermal conductive substrate having at least one electrical isolation layer configured to provide vertical electrical isolation and a heat transfer path through the substrate from a front side (first side) to a back side (second side) thereof. The light emitting diode includes an anode... Agent:

20110316038 - Substrate comprising aluminum/graphite composite, heat dissipation part comprising same, and led luminescent member: A process for producing a substrate, which comprises processing an aluminum/graphite composite into plates having a thickness of 0.5-3 mm using a multi-wire saw under the following conditions (1) to (4): (1) the wires have abrasive grains bonded thereto which are one or more substances selected from diamond, C—BN, silicon... Agent: Denki Kagaku Kogyo Kabushiki Kaisha

20110316039 - Vertical led with current guiding structure: Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a metal... Agent:

20110316040 - Composite substrate for led light emitting element, method of production of same, and led light emitting element: A substrate for an LED light emitting element having a small difference of linear thermal expansion coefficient with the III-V semiconductor crystal constituting an LED, having an excellent thermal conductivity, and suitable for high output LEDs. A porous body comprises one or more materials selected from silicon carbide, aluminum nitride,... Agent: Denki Kagaku Kogyo Kabushiki Kaisha

20110316041 - Sapphire substrate and method for manufacturing the same and nitride semiconductor light emitting device: A sapphire substrate having one principal surface on which a nitride semiconductor is grown, said one principal surface having a plurality of projections. Each of the projections has a generally pyramidal shape with a not truncated, more sharpened tip and with an inclined surface composed of a crystal growth-suppression surface... Agent: Nichia Corporation

20110316042 - Thyristor random access memory device and method: Memory devices and methods of making memory devices are shown. Methods and configurations as shown provide folded and vertical memory devices for increased memory density. Methods provided reduce a need for manufacturing methods such as deep dopant implants.... Agent: Micron Technology, Inc.

20110316043 - Thin group iv semiconductor structures: Thin group IV semiconductor structures are provided comprising a thin Si substrate and a second region formed directly on the Si substrate, where the second region comprises either (i) a Ge1-xSnx layer; or (ii) a Ge layer having a threading dislocation density of less than about 105/cm2, and the effective... Agent: Arizona Board Of Regents

20110316044 - Delta monolayer dopants epitaxy for embedded source/drain silicide: Semiconductor structures are disclosed that have embedded stressor elements therein. The disclosed structures include at least one FET gate stack located on an upper surface of a semiconductor substrate. The at least one FET gate stack includes source and drain extension regions located within the semiconductor substrate at a footprint... Agent: International Business Machines Corporation

20110316046 - Field effect transistor device: A method for forming a field effect transistor device includes forming a gate stack portion on a substrate, forming a spacer portion on the gates stack portion and a portion of the substrate, removing an exposed portion of the substrate, epitaxially growing a first silicon material on the exposed portion... Agent: International Business Machines Corporation

20110316045 - Layout design for a high power, gan-based fet: A FET includes a substrate, a buffer layer disposed on the substrate, a channel layer disposed over the buffer layer and a barrier layer disposed over the channel layer. Source, gate and drain electrodes are located over the barrier layer and extend in a longitudinal direction thereon. A portion of... Agent: Velox Semiconductor Corporation

20110316047 - Semiconductor device and manufacturing method of the same: The objective of the present invention is to provide a semiconductor device of a hetero-junction field effect transistor that is capable of obtaining a high output and a high breakdown voltage and a manufacturing method of the same. The present invention is a semiconductor device of a hetero junction field... Agent: Mitsubishi Electric Corporation

20110316048 - Semiconductor device and method for fabricating the same: There is provided a semiconductor device and a method for fabricating the same whose withstanding characteristic may be enhanced and whose ON resistance may be reduced. A MIS-type HEMT includes a carrier traveling layer made of a group-III nitride semiconductor and formed on a supporting substrate, a carrier supplying layer... Agent: Furukawa Electric Co., Ltd.

20110316049 - Nitride semiconductor device and method of manufacturing the same: Provided are a vertical nitride semiconductor device in which occurrence of leak currents can be suppressed, and a method for manufacturing such nitride semiconductor device. A nitride semiconductor device, which is a vertical HEMT, is provided with an n− type GaN first nitride semiconductor layer, p+ type GaN second nitride... Agent: Toyota Jidosha Kabushiki Kaisha

20110316050 - Semiconductor device having a heterojunction biopolar transistor and a field effect transistor: A semiconductor device with a heterojunction bipolar transistor (HBT) and a field effect transistor (FET) formed over the same substrate; providing improved HBT characteristics and a lowered HBT collector resistance and also satisfactory etching of the FET gate recess, along with low ON-resistance in the FET. The sub-collector layer of... Agent: Renesas Electronics Corporation

20110316051 - Semiconductor wafer, method of producing semiconductor wafer, electronic device, and method of producing electronic device: The semiconductor wafer includes: a base wafer; and an inhibition layer that is disposed on the base wafer as one piece or to be separate portions from each other, and inhibits growth of a crystal of a compound semiconductor, where the inhibition layer has a plurality of first opening regions... Agent: Sumitomo Chemical Company, Limited

20110316052 - Semiconductor integrated circuit device: In addition to a memory macro region and functional circuit regions on a substrate, a semiconductor integrated circuit device includes a dummy pattern region 40 arranged between the functional circuit regions and between the memory macro region 10 and the functional circuit regions and including a dummy pattern. The dummy... Agent: Renesas Electronics Corporation

20110316053 - Mos transistor structure with easy access to all nodes: A transistor device structured such that the bulk, gate, drain, and source are all accessible from all four edges of the device and such that current distribution is uniform over the device is provided. The transistor is created with a four-metal CMOS process. A bulk connection can be made with... Agent: Dialog Semiconductor Gmbh

20110316054 - Method, apparatus, and system for micromechanical gas chemical sensing capacitor: A method for fabrication of capacitive environment sensors is provided in which the sensor elements are integrated in a CMOS structure with electronics through the use of complementary metal oxide semiconductor (CMOS) fabrication methods. Also provided are environment sensors fabricated, for example, by the method, and a measurement system using... Agent: Carnegie Mellon University

20110316055 - Substrate provided with a semi-conducting area associated with two counter-electrodes and device comprising one such substrate: A support substrate comprises first and second counter-electrodes arranged in the same plane at the level of a surface of the support substrate. An electrically insulating area separates the first and second counter-electrodes. A semi-conducting area with first and second portions is separated from the support substrate by an electrically... Agent: Commissariat A L'energie Atomique Et Aux Energies Alternatives

20110316056 - Semiconductor device and method of manufacturing the same: The present invention relates to a method of manufacturing a semiconductor device having a shared contact for connection between a source/drain region and a gate electrode. After formation of a gate electrode via a gate insulating film on a semiconductor substrate, a top surface of the substrate is covered with... Agent: Kabushiki Kaisha Toshiba

20110316057 - Wiring board, semiconductor device, and manufacturing methods thereof: It is an object to reduce defective conduction in a wiring board or a semiconductor device whose integration degree is increased. It is another object to manufacture a highly reliable wiring board or semiconductor device with high yield. In a wiring board or a semiconductor device having a multilayer wiring... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110316058 - Ferro-electric capacitor modules, methods of manufacture and design structures: Ferro-electric capacitor modules, methods of manufacture and design structures. The method of manufacturing the ferro-electric capacitor includes forming a barrier layer on an insulator layer of a CMOS structure. The method further includes forming a top plate and a bottom plate over the barrier layer. The method further includes forming... Agent: International Business Machines Corporation

20110316059 - Flexible ferroelectric memory device and manufacturing method for the same: The present disclosure relates to a flexible nonvolatile ferroelectric memory device, a 1T-1R (1Transistor-1Resistor) flexible ferroelectric memory device, and a manufacturing method for the same.... Agent: Sungkyunkwan University Foundation For Corporate Collaboration

20110316060 - Electronic device including a nonvolatile memory cell: An electronic device can include a nonvolatile memory cell that includes a capacitor, a tunnel structure, a state transistor, and an access transistor. In an embodiment, the capacitor and tunnel structure can include upper electrodes, wherein the upper electrode of the capacitor has a first conductivity type, and the upper... Agent:

20110316061 - Structure and method to control bottom corner threshold in an soi device: Semiconductor structures and methods to control bottom corner threshold in a silicon-on-insulator (SOI) device. A method includes doping a corner region of a semiconductor-on-insulator (SOI) island. The doping includes tailoring a localized doping of the corner region to reduce capacitive coupling of the SOI island with an adjacent structure.... Agent: International Business Machines Corporation

20110316062 - Semiconductor device: In terms of achieving a reduction in the cost of an antenna switch, there is provided a technology capable of minimizing harmonic distortion generated in the antenna switch even when the antenna switch is particularly formed of field effect transistors formed over a silicon substrate. Between the source region and... Agent: Renesas Electronics Corporation

20110316065 - Nonvolatile semiconductor memory device and method of manufacturing the same: A nonvolatile semiconductor memory device includes a first stack unit with a first selection transistor and a second selection transistor formed on a semiconductor substrate and a second stack unit with first insulating layers and first conductive layers stacked alternately on the upper surface of the first stack unit. The... Agent: Kabushiki Kaisha Toshiba

20110316064 - Semiconductor memory devices and methods of forming the same: Semiconductor devices and methods of forming the same may be provided. The semiconductor devices may include gate patterns and insulation patterns repeatedly and alternatingly stacked on a substrate. The semiconductor devices may also include a through region penetrating the gate patterns and the insulation patterns. The semiconductor devices may further... Agent:

20110316063 - Three dimensional memory and methods of forming the same: Some embodiments include a memory device and methods of forming the memory device. One such memory device includes a first group of memory cells, each of the memory cells of the first group being formed in a cavity of a first control gate located in one device level of the... Agent:

20110316066 - Semiconductor memory device and method for manufacturing the same: According to one embodiment, a semiconductor memory device includes a semiconductor substrate, a tunnel insulating film, a first electrode, an interelectrode insulating film and a second electrode. The tunnel insulating film is provided on the semiconductor substrate. The first electrode is provided on the tunnel insulating film. The interelectrode insulating... Agent:

20110316067 - Electronic device including a tunnel structure: An electronic device can include a tunnel structure that includes a first electrode, a second electrode, and tunnel dielectric layer disposed between the electrodes. In a particular embodiment, the tunnel structure may or may not include an intermediate doped region that is at the primary surface, abuts a lightly doped... Agent:

20110316068 - Flash memory with recessed floating gate: A flash memory device wherein the floating gate of the flash memory is defined by a recessed access device. The use of a recessed access device results in a longer channel length with less loss of device density. The floating gate can also be elevated above the substrate a selected... Agent: Micron Technology, Inc.

20110316070 - Charge trapping non-volatile semiconductor memory device and method of making: The present invention provides a charge trapping non-volatile semiconductor memory device and a method of making the device. The charge trapping non-volatile semiconductor memory device comprises a semiconductor substrate, a source region, a drain region, and, consecutively formed over the semiconductor substrate, a channel insulation layer, a charge trapping layer,... Agent: Fudan University

20110316069 - Nonvolatile semiconductor memory device: According to one embodiment, a nonvolatile semiconductor memory device includes a memory unit and a non-memory unit. The memory unit includes a stacked structure including electrode films stacked in a first direction, and a interelectrode insulating film provided between the electrode films, a select gate electrode stacked with the stacked... Agent: Kabushiki Kaisha Toshiba

20110316071 - Power semiconductor device: Provided is a power semiconductor device including a semiconductor substrate, in which a current flows in a thickness direction of the semiconductor substrate. The semiconductor substrate includes a resistance control structure configured so that a resistance to the current becomes higher in a central portion of the semiconductor substrate than... Agent: Mitsubishi Electric Corporation

20110316072 - Semiconductor memory devices including asymmetric word line pads: Semiconductor memory devices may include a semiconductor substrate, a first stack disposed on the semiconductor substrate and a second stack disposed on the first stack. The first stack may include a plurality of first word lines with a plurality of first line pads stacked in a stair form, and the... Agent: Samsung Electronics Co., Ltd.

20110316073 - Soi cmos device having vertical gate structure: The present invention discloses an SOI CMOS device having a vertical gate structure, comprising: an SOI substrate, and an NMOS region and a PMOS region grown on the SOI substrate, wherein the NMOS region and the PMOS region share one vertical gate region, said vertical gate region lying in the... Agent: Shanghai Institute Of Microsystem And Information Technology, Chinese Academy Sciences

20110316074 - Semiconductor device and method for manufacturing the same: A shape of an upper edge of a trench is realized as an upwardly-open tapered surface T2, thereby reducing contact resistance without involvement of an increase in pitch for trench formation. Specifically, the trench has the tapered surface along the edge of an opening. A contact surface between a source... Agent:

20110316075 - Trench mosfet with trenched floating gates having thick trench bottom oxide as termination: A power semiconductor power device having composite trench bottom oxide and multiple trench floating gates is disclosed. The gate charge is reduced by forming a pad oxide surrounding a HDP oxide on trench bottom. The multiple trenched floating gates are applied in termination for saving body mask.... Agent: Force Mos Technology Co., Ltd.

20110316076 - Power mosfet device with self-aligned integrated schottky and its manufacturing method: A power MOSFET device and manufacturing method thereof, includes the steps of selectively depositing a first conductive material in the middle region at the bottom of a contact trench and contacting with light-doped N-type epitaxial layer to form a Schottky junction and depositing a second conductive material at the side... Agent:

20110316077 - Power semiconductor structure with schottky diode and fabrication method thereof: A power semiconductor structure with schottky diode is provided. In the step of forming the gate structure, a separated first polysilicon structure is also formed on the silicon substrate. Then, the silicon substrate is implanted with dopants by using the first polysilicon structure as a mask to form a body... Agent: Great Power Semiconductor Corp.

20110316078 - Shielded level shift transistor: A semiconductor device can include a transistor and an isolation region. The transistor is formed in a semiconductor substrate having a first conductivity type. The transistor includes a drift region extending from a drain region toward a source region and having a second conductivity type. The drift region includes a... Agent: Fairchild Semiconductor Corporation

20110316079 - Shallow junction formation and high dopant activation rate of mos devices: A semiconductor structure comprises a gate stack in a semiconductor substrate and a lightly doped source/drain (LDD) region in the semiconductor substrate. The LDD region is adjacent to a region underlying the gate stack. The LDD region comprises carbon and an n-type impurity, and the n-type impurity comprises phosphorus tetramer.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110316080 - Fin transistor structure and method of fabricating the same: There is provided a fin transistor structure and a method of fabricating the same. The fin transistor structure comprises a fin formed on a semiconductor substrate, wherein an insulation material is formed between a portion of the fin serving as the channel region of the transistor structure and the substrate,... Agent: Institute Of Microelectronics, Chinese Academy Of Sciences

20110316081 - Finfets and methods of making same: A method of fabricating and a structure of a merged multi-fin finFET. The method includes forming single-crystal silicon fins from the silicon layer of an SOI substrate having a very thin buried oxide layer and merging the end regions of the fins by growing vertical epitaxial silicon from the substrate... Agent: International Business Machines Corporation

20110316082 - Soi substrate and manufacturing method thereof: An object is to provide an SOI substrate provided with a semiconductor layer which can be used practically even when a glass substrate is used as a base substrate. Another object is to provide a semiconductor device having high reliability using such an SOI substrate. An altered layer is formed... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110316084 - Fet with replacement gate structure and method of fabricating the same: A MUGFET and method of manufacturing a MUGFET is shown. The method of manufacturing the MUGFET includes forming temporary spacer gates about a plurality of active regions and depositing a dielectric material over the temporary spacer gates, including between the plurality of active regions. The method further includes etching portions... Agent: International Business Machines Corporation

20110316083 - Fet with self-aligned back gate: A back-gated field effect transistor (FET) includes a substrate, the substrate comprising top semiconductor layer on top of a buried dielectric layer on top of a bottom semiconductor layer; a front gate located on the top semiconductor layer; a channel region located in the top semiconductor layer under the front... Agent: International Business Machines Corporation

20110316085 - Integrated circuit including a stressed dielectric layer with stable stress: An integrated circuit is provided having a substrate and a transistor in an active region of the substrate. The substrate also has an isolation region having a dielectric material. In one embodiment, a pre-metal dielectric layer is disposed over the substrate and the transistor. At least one of the isolation... Agent: Globalfoundries Singapore Pte. Ltd.

20110316086 - Wafer scale package for high power devices: A semiconductor device package is formed of DBC in which thinned MOSgated and/or diode die are soldered to the bottom of an etched depression in the upper conductive layer. A via in the insulation layer of the DBC is filled with a conductive material to form a resistive shunt. Plural... Agent: International Rectifier Corporation

20110316087 - Mos transistor, manufacturing method thereof, and semiconductor device: A MOS transistor has a first stress layer formed over a silicon substrate on a first side of a channel region defined by a gate electrode, and a second stress layer formed over the silicon substrate on a second side of the channel region, the first and second stress layers... Agent: Fujitsu Semiconductor Limited

20110316089 - Semiconductor device with gate-undercutting recessed region: A semiconductor device comprises a gate structure on a semiconductor substrate and a recessed region in the semiconductor substrate. The recessed region has a widest lateral opening that is near a top surface of the semiconductor substrate. The widest lateral opening undercuts the gate structure.... Agent: Texas Instruments Incorporated

20110316088 - Semiconductor structure and method for forming the same: A semiconductor structure and a method for forming the same are provided. The structure comprises a semiconductor substrate (100) with an nMOSFET region (102) and a pMOSFET region (104) on it. An nMOSFET structure and a pMOSFET structure are formed in the nMOSFET region (102) and the pMOSFET region (104),... Agent: Institute Of Microelectronics, Chinese Academy Of Sciences

20110316090 - Boost converter with integrated high power discrete fet and low voltage controller: A boost converter for high power and high output voltage applications includes a low voltage controller integrated circuit and a high voltage, vertical, discrete field effect transistor, both of which are packed in a single package on separate electrically isolated die pads.... Agent: Alpha & Omega Semiconductor, Ltd.

20110316091 - Semiconductor devices, assemblies and constructions: Embodiments disclosed herein include methods in which a pair of openings are formed into semiconductor material, with the openings being spaced from one another by a segment of the semiconductor material. Liners are formed along sidewalls of the openings, and then semiconductor material is isotropically etched from bottoms of the... Agent: Micron Technology, Inc.

20110316092 - Mask rom: A mask read-only memory (ROM) includes parallel doping lines of a second conductivity type formed in a substrate of a first conductivity type, a first insulation film formed on the doping lines and the substrate, conductive pads fainted on the first insulation film, a second insulation film formed on the... Agent:

20110316094 - Semiconductor devices with asymmetric halo implantation and method of manufacture: a method comprises forming a hardmask over one or more gate structures. The method further comprises forming a photoresist over the hardmask. The method further comprises forming an opening in the photoresist over at least one of the gate structures. The method further comprises stripping the hardmask that is exposed... Agent: International Business Machines Corporation

20110316093 - Short channel semiconductor devices with reduced halo diffusion: A short channel semiconductor device is formed with halo regions that are separated from the bottom of the gate electrode and from each other. Embodiments include implanting halo regions after forming source/drain regions and source/drain extension regions. An embodiment includes forming source/drain extension regions in a substrate, forming source/drain regions... Agent: Globalfoundries Inc.

20110316095 - Semiconductor device and manufacturing method thereof: A semiconductor device includes a silicon substrate, an SiO film, and a High-K film. The SiO film is first formed on the silicon substrate and then subjected to a nitridation process to obtain an SiON film from the SiO film. The nitridation process is performed such that nitrogen concentration in... Agent: Kabushiki Kaisha Toshiba

20110316096 - Semiconductor device and method of manufacturing a semiconductor device: A semiconductor device can be manufactured by a method that includes forming a structure that includes a plurality of layers of semiconductor material. One or more etching processes are performed on the multi-layered semiconductor structure, and then an Ar/O2 treatment is performed on the multi-layered semiconductor structure. The Ar/O2 treatment... Agent: Macronix International Co., Ltd.

20110316097 - Planar cavity mems and related structures, methods of manufacture and design structures: A method of forming at least one Micro-Electro-Mechanical System (MEMS) cavity includes forming a first sacrificial cavity layer over a wiring layer and substrate. The method further includes forming an insulator layer over the first sacrificial cavity layer. The method further includes performing a reverse damascene etchback process on the... Agent: International Business Machines Corporation

20110316098 - Planar cavity mems and related structures, methods of manufacture and design structures: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a lower sacrificial material used to form a lower cavity. The method further includes forming a cavity via connecting the lower cavity to an upper cavity. The cavity via is formed with a top view profile of rounded... Agent: International Business Machines Corporation

20110316099 - Planar cavity mems and related structures, methods of manufacture and design structures: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a lower wiring layer on a substrate. The method further includes forming a plurality of discrete wires from the lower wiring layer. The method further includes forming an electrode beam over the plurality of discrete wires. The at... Agent: International Business Machines Corporation

20110316100 - Mems microphone and method for manufacturing same: A micro electro mechanical systems (MEMS) microphone, and a method of manufacturing the MEMS microphone having an interval between a membrane and a back plate, the interval being correctly adjusted by forming the membrane and the back plate after an air-gap forming portion on a silicon substrate. Since the membrane... Agent:

20110316101 - Planar cavity mems and related structures, methods of manufacture and design structures: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a plurality of discrete wires on a substrate. The method further includes forming a sacrificial cavity layer on the discrete wires. The method further includes forming trenches in an upper surface of the sacrificial cavity layer. The method... Agent: International Business Machines Corporation

20110316104 - Magneto-resistance effect element and magnetic memory: It is possible to reduce a current required for spin injection writing. A magneto-resistance effect element includes: a first magnetization pinned layer; a magnetization free layer; a tunnel barrier layer; a second magnetization pinned layer whose direction of magnetization is pinned to be substantially anti-parallel to the direction of magnetization... Agent: Kabushiki Kaisha Toshiba

20110316102 - Storage element and storage device: A storage element includes: a storage layer configured to retain information based on a magnetization state of a magnetic material and include a perpendicular magnetization layer whose magnetization direction is in a direction perpendicular to a film plane, a non-magnetic layer, and a ferromagnetic layer that has an axis of... Agent: Sony Corporation

20110316103 - Storage element, method for manufacturing storage element, and memory: Disclosed herein is a storage element, including: a storage layer configured to retain information based on a magnetization state of a magnetic material; and a magnetization pinned layer configured to be provided for the storage layer with intermediary of a tunnel barrier layer, wherein the tunnel barrier layer has a... Agent: Sony Corporation

20110316105 - Monolithic nuclear event detector and method of manufacture: A PIN diode-based monolithic Nuclear Event Detector and method of manufacturing same for use in detecting a desired level of gamma radiation, in which a PIN diode is integrated with signal processing circuitry, for example CMOS circuitry, in a single thin-film Silicon On Insulator (SOI) chip. The PIN diode is... Agent:

20110316106 - Light pipe etch control for cmos fabrication: In accordance with at least some embodiments of the present disclosure, a process for fabricating a light pipe (LP) is described. The process may be configured to construct a semiconductor structure having an etch-stop layer above a photodiode region and a first dielectric layer above the etch-stop layer. The process... Agent: Himax Imaging, Inc.

20110316107 - Solid-state image sensor and manufacturing method of the sensor: A single crystal silicon layer is formed on a principal surface of a first wafer by epitaxial growth. A silicon oxide layer is formed on the single crystal silicon layer. Next, a defect layer is formed inside the single crystal silicon layer by ion implantation, and then, the second wafer... Agent: Panasonic Corporation

20110316108 - Photoelectric conversion device, package structure therefor, and method of manufacturing photoelectric conversion device: The present disclosure provides a method of manufacturing a photoelectric conversion device, including, a first step of forming a plurality of photoelectric conversion regions on a surface on one side of a semiconductor wafer, a second step of preparing a light-blocking wafer having insertion openings, a third step of bonding... Agent: Sony Corporation

20110316109 - Solid state imaging device: A solid-state imaging device includes photoelectric conversion units, vertical transfer units including vertical transfer electrodes, a horizontal transfer unit, a distribution transfer unit including distribution transfer electrodes, and first light-shield layers and second light-shield layers provided on the vertical transfer units and the distribution transfer unit. The first light-shield layers... Agent: Panasonic Corporation

20110316110 - Atomic layer deposition of chemical passivation layers and high performance anti-reflection coatings on back-illuminated detectors: A back-illuminated silicon photodetector has a layer of Al2O3 deposited on a silicon oxide surface that receives electromagnetic radiation to be detected. The Al2O3 layer has an antireflection coating deposited thereon. The Al2O3 layer provides a chemically resistant separation layer between the silicon oxide surface and the antireflection coating. The... Agent: California Institute Of Technology

20110316111 - Pyroelectric detector, pyroelectric detection device, and electronic instrument: A pyroelectric detector includes a pyroelectric detection element mounted on a first side of a support member with a second side facing a cavity. The pyroelectric detection element has a capacitor including a first electrode, a pyroelectric body and a second electrode, and an interlayer insulation layer forming first and... Agent: Seiko Epson Corporation

20110316112 - Pyroelectric detector, pyroelectric detection device, and electronic instrument: A pyroelectric detector includes a pyroelectric detection element, a support member and a support part. The pyroelectric detection element has a capacitor including a first electrode, a second electrode, and a pyroelectric body. The support member includes first and second sides with the pyroelectric detection element being mounted on the... Agent: Seiko Epson Corporation

20110316113 - Pyroelectric detector, pyroelectric detection device, and electronic instrument: A pyroelectric detector includes a pyroelectric detection element, a support member, and a support part. The pyroelectric detection element has a capacitor including a first electrode, a second electrode, and a pyroelectric body disposed between the first and second electrodes, and a first reducing gas barrier layer that protects the... Agent: Seiko Epson Corporation

20110316114 - Simplified pitch doubling process flow: A method for fabricating a semiconductor device comprises patterning a layer of photoresist material to form a plurality of mandrels. The method further comprises depositing an oxide material over the plurality of mandrels by an atomic layer deposition (ALD) process. The method further comprises anisotropically etching the oxide material from... Agent: Micron Technology, Inc.

20110316115 - Power semiconductor device: A power semiconductor device comprises: a high-voltage side switching element and a low-voltage side switching element which are totem-pole-connected in that order from a high-voltage side between a high-voltage side potential and a low-voltage side potential; a high-voltage side drive circuit that drives the high-voltage side switching element; a low-voltage... Agent: Mitsubishi Electric Corporation

20110316116 - Photosensitive resin composition, adhesive film and light-receiving device: An object of the present invention is to provide a photosensitive resin composition which leaves a small amount of resin residues after patterning by light-exposure and development and can reduce condensation between the semiconductor wafer and the transparent substrate under a high temperature and high humidity environment, an adhesive film... Agent:

20110316117 - Die package and a method for manufacturing the die package: A die package and a method for manufacturing the die package are provided. The die package includes a second die arranged above a first die, the first die comprising an interconnect region on a surface facing the second die, wherein the second die is arranged laterally next to the interconnect... Agent: Agency For Science, Technology And Research

20110316118 - Semiconductor device: A semiconductor device includes a substrate including a diffusion region, a device isolation region, an inductor region, and a guard ring region, a guard ring formed on the substrate to be connected to the diffusion region in the guard ring region, an insulating film formed on the substrate, in which... Agent: Renesas Electronics Corporation

20110316119 - Semiconductor package having de-coupling capacitor: Provided is a semiconductor package including a de-coupling capacitor. The semiconductor package includes a substrate, on an upper surface of which a semiconductor chip is mounted; a plurality of first conductive bumps that are disposed on a lower surface of the substrate and that electrically connect the substrate to an... Agent:

20110316120 - Release strategies for making transferable semiconductor structures, devices and device components: Provided are methods for making a device or device component by providing a multilayer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of... Agent: The Board Of Trustees Of The University Of Illinois

20110316121 - Method for manufacturing trench type superjunction device and trench type superjunction device: A method for manufacturing trench type super junction device is disclosed. The method includes the step of forming one or more P type implantation regions in the N type epitaxial layer below the bottom of each trench. By using this method, a super junction device having alternating P type and... Agent:

20110316122 - Wafer laser-marking method and die fabricated using the same: A wafer laser-marking method is provided. First, a wafer having a first surface (an active surface) and a second surface (a back surface) opposite to each other is provided. Next, the wafer is thinned. Then, the thinned wafer is fixed on a non-UV tape such that the second surface of... Agent:

20110316123 - Laminated semiconductor substrate, laminated chip package and method of manufacturing the same: In a laminated semiconductor substrate, a plurality of semiconductor substrates are laminated. Each of the semiconductor substrate has a plurality of scribe-groove parts formed along scribe lines. Further, each of the semiconductor substrate has a plurality of device regions insulated from each other and has a semiconductor device formed therein,... Agent: Headway Technologies, Inc.

20110316124 - Semiconductor device: A semiconductor device having a through electrode excellent in performance as for an electrode and manufacturing stability is provided. There is provided a through electrode composed of a conductive small diameter plug and a conductive large diameter plug on a semiconductor device. A cross sectional area of the small diameter... Agent: Renesas Electronics Corporation

20110316125 - Intermediate structures for forming circuits: In order to form a more stable silicon pillar which can be used for the formation of vertical transistors in DRAM cells, a multi-step masking process is used. In a preferred embodiment, an oxide layer and a nitride layer are used as masks to define trenches, pillars, and active areas... Agent: Micron Technology, Inc.

20110316126 - Semiconductor element and method of manufacturing the semiconductor element: A semiconductor element includes a semiconductor layer, an electrode, an adhesion layer, and an insulating layer. The electrode is disposed over the semiconductor layer and has a first upper surface and a second upper surface disposed further away from the semiconductor layer than the first upper surface. The adhesion layer... Agent: Nichia Corporation

20110316127 - Spacer formation film, semiconductor wafer and semiconductor device: A spacer formation film is adapted to be used for forming a spacer defining air-gap portions on a side of one surface of a semiconductor wafer and by being cut into a desired shape, the spacer formation film includes: a support base having a sheet-like shape; a spacer formation layer... Agent:

20110316128 - Semiconductor wafers of silicon and method for their production: Semiconductor wafers of silicon are produced by pulling a single crystal growing on a phase boundary from a melt contained in a crucible and cutting of semiconductor wafers therefrom, wherein during pulling of the single crystal, heat is delivered to a center of the phase boundary and a radial profile... Agent: Siltronic Ag

20110316129 - Multilayer structures for magnetic shielding: A magnetic shield is presented. The shield may be used to protect a microelectronic device from stray magnetic fields. The shield includes at least two layers. A first layer includes a magnetic material that may be used to block DC magnetic fields. A second layer includes a conductive material that... Agent: Honeywell International Inc.

20110316130 - Thin semiconductor package and method for manufacturing same: A method for manufacturing a thin semiconductor package includes providing a lead frame with a removable substrate that has an attaching surface attached to a first surface of the lead frame. The lead frame is formed from an electrically conductive sheet and has leads that extend inwardly from a lead... Agent: Freescale Semiconductor, Inc.

20110316131 - Semiconductor device with heat spreader: A BGA type semiconductor device includes: a substrate having wirings and electrodes; a semiconductor element disposed on the substrate, having a rectangular plan shape, and a plurality of electrodes disposed along each side of the semiconductor element; a plurality of wires connecting the electrodes on the semiconductor element with the... Agent: Fujitsu Semiconductor Limited

20110316133 - Integrated circuit package system with package stand-off and method of manufacture thereof: A method of manufacture of an integrated circuit package system includes: providing a penetrable layer; partially immersing leads in the penetrable layer; coupling an integrated circuit die to the leads; molding a package body on the integrated circuit die, the leads, and the penetrable layer; and exposing stand-off leads from... Agent:

20110316137 - Method for manufacturing a semiconductor integrated circuit device: The semiconductor device includes a semiconductor chip, a chip mounting portion, a suspension lead, and a plurality of leads. Each of the plurality of leads has a first part and a second part, and the suspension lead has a first part and a second part. The first part of each... Agent: Renesas Electronics Corporation

20110316132 - Semiconductor device and method of forming vertically offset bond on trace interconnect structure on leadframe: A semiconductor device has a vertically offset BOT interconnect structure. The vertical offset is achieved with a leadframe having a plurality of lead fingers around a die paddle. A first conductive layer is formed over the lead fingers. A second conductive layer is formed over the lead fingers. Each second... Agent: Stats Chippac, Ltd.

20110316135 - Semiconductor device and method of manufacturing the same: When a metal ribbon is ultrasonic-bonded, a peripheral area of an island and hanging pins provided in the periphery of the island need to be clamped by use of clampers of a bonder to prevent the island from being lifted up. However, if no sufficiently-wide peripheral area of the island... Agent: On Semiconductor Trading, Ltd.

20110316136 - Semiconductor device with lead terminals having portions thereof extending obliquely: A semiconductor device in which a semiconductor chip, a lead frame and metal wires for electrically connecting the lead frame are sealed with sealing resin. The lead frame has a plurality of lead terminal portions, a supporting portion for supporting the semiconductor chip, and hanging lead portions supporting the supporting... Agent: Rohm Co., Ltd.

20110316134 - Semiconductor storage device and manufacturing method thereof: According to the embodiment, a semiconductor storage device includes an organic substrate, a semiconductor memory chip, a lead frame, and a resin mold section. The lead frame includes an adhering portion. The organic substrate is singulated to have a shape in which a portion in which the organic substrate does... Agent: Kabushiki Kaisha Toshiba

20110316138 - High frequency fast recovery diode: A high-frequency fast recovery diode that includes a diode chip set, solder lugs, lead wires, lead terminals, a silicone coating layer and a plastic package body. The diode chip set includes n-diode chips arranged in the same polarity order sequentially, a part of the n-diode chips can be fast recovery... Agent: Changzhou Giantion Photoelectricity Industry Development Co., Ltd.

20110316139 - Package for a wireless enabled integrated circuit: An integrated circuit (IC) device is provided. The IC device includes a substrate, an IC die coupled to the substrate, and a first wirelessly enabled functional block formed on the IC die. The first wirelessly enabled functional block is configured to wirelessly communicate with a second wirelessly enabled functional block... Agent: Broadcom Corporation

20110316140 - Microelectronic package and method of manufacturing same: A microelectronic package includes a substrate (110), a die (120) embedded within the substrate, the die having a front side (121) and a back side (122) and a through-silicon-via (123) therein, build-up layers (130) built up over the front side of the die, and a power plane (140) in physical... Agent:

20110316141 - Layered chip package and method of manufacturing same: A layered chip package includes a main body, and wiring disposed on a side surface of the main body. The main body includes: a main part including a plurality of layer portions stacked; a plurality of first terminals disposed on the top surface of the main part and connected to... Agent: Headway Technologies, Inc.

20110316143 - Semiconductor module with cooling mechanism and production method thereof: A semiconductor module is provided which includes a semiconductor unit which is made by a resin mold. The resin mold has formed therein a coolant path through which a coolant flows to cool a semiconductor chip embedded in the resin mold. The resin mold also includes heat spreaders, and electric... Agent: Denso Corporation

20110316142 - Semiconductor module with resin-molded package of heat spreader and power semiconductor chip: A semiconductor module is provided which includes a resin molded package which is made by a resinous mold assembly. The resin molded package is clamped by covers through a fastener to make the semiconductor module. The resinous mold assembly has formed therein a coolant path that is a portion of... Agent: Denso Corporation

20110316144 - Flexible heat sink having ventilation ports and semiconductor package including the same: A heat sink includes a first adhesive layer, and a heat dissipation layer disposed on the first adhesive layer, and has ventilation ports that extend therethrough including through the first adhesive layer and the heat dissipation layer. The heat sink forms an outermost part of a semiconductor package. Thus, when... Agent: Samsung Electronics Co., Ltd.

20110316145 - Nano/micro-structure and fabrication method thereof: A nano/micro-structure and a fabrication method thereof are provided. The method combines electroless plating and metal-assist etching to fabricate nano/micro-structure on a silicon substrate.... Agent: National Central University

20110316147 - Embedded 3d interposer structure: A device includes an interposer, which includes a substrate; and at least one dielectric layer over the substrate. A plurality of through-substrate vias (TSVs) penetrate through the substrate. A first metal bump is in the at least one dielectric layer and electrically coupled to the plurality of TSVs. A second... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110316152 - Manufacturing method of semiconductor packages and a semiconductor package: Semiconductor chips are placed in recesses of a support carrier with electrode surfaces facing upward in a state where the semiconductor chips are arranged separately from each other. A seal resin part is formed by encapsulating the semiconductor chips by an insulating resin on said support carrier. Rewiring patterns are... Agent: Shinko Electric Industries Co., Ltd.

20110316149 - Method of mounting electronic component and mounting substrate: In flip chip attach of electronic components, underfill is filled between the component and the substrate to alleviate, for example, thermal stress. In electronic component mounting using copper pillars conducted so far, filler contained in the underfill may cause separation in the process of heating and curing the resin. Disclosed... Agent:

20110316146 - Semiconductor device and method of forming anisotropic conductive film between semiconductor die and build-up interconnect structure: A semiconductor wafer contains a plurality of semiconductor die with bumps formed over contact pads on an active surface of the semiconductor die. An ACF is deposited over the bumps and active surface of the wafer. An insulating layer can be formed between the ACF and semiconductor die. The semiconductor... Agent: Stats Chippac, Ltd.

20110316153 - Semiconductor device and package including the semiconductor device: A semiconductor device includes a semiconductor substrate 1, an interlayer insulating film 2, 3 formed on the semiconductor substrate 1, an electrode pad 4 formed on the interlayer insulating film 2, 3, a protective film 6 which is formed on the interlayer insulating film 2, 3 to cover a peripheral... Agent: Panasonic Corporation

20110316154 - Semiconductor device having semiconductor substrate, and method of manufacturing the same: A semiconductor device includes a semiconductor substrate having a plurality of electrode pads, a protective film covering the upper surface of the semiconductor substrate and having an opening so that the electrode pad is exposed therethrough, a metal film formed on the electrode pad exposed through the opening, and a... Agent: Panasonic Corporation

20110316150 - Semiconductor package and method for manufacturing semiconductor package: A semiconductor package includes a first board, a semiconductor chip having a first face and a second face at an opposite side to the first face, the semiconductor chip being mounted on the first board with the first face facing the first board, an insulating film provided on the second... Agent: Shinko Electric Industries Co., Ltd.

20110316151 - Semiconductor package and method for manufacturing semiconductor package: A semiconductor package includes a board, an under fill resin layer provided on the board, and a semiconductor chip having a first face and a second face at an opposite side to the first face, the semiconductor chip being flip-chip mounted on the board via the under fill resin layer... Agent: Shinko Electric Industries Co., Ltd.

20110316148 - Wiring substrate: A wiring substrate includes plural wiring layers and plural insulation layers being alternately stacked one on top of the other. The plural insulation layers are formed with insulation resin having the same composition. The plural insulation layers are formed with a filler having the same composition. The filler content of... Agent: Shinko Electric Industries Co., Ltd.

20110316157 - Semiconductor device and a method for manufacturing the same: A semiconductor device according to the present invention includes: a semiconductor chip; a sealing resin layer formed on the semiconductor chip; and a post electrode formed in a through-hole penetrating through the sealing resin layer in a thickness direction, and having a hemispheric top surface.... Agent: Rohm Co., Ltd.

20110316156 - Semiconductor device and method of forming rdl along sloped side surface of semiconductor die for z-direction interconnect: A semiconductor device has a first semiconductor die with a sloped side surface. The first semiconductor die is mounted to a temporary carrier. An RDL extends from a back surface of the first semiconductor die along the sloped side surface of the first semiconductor die to the carrier. An encapsulant... Agent: Stats Chippac, Ltd.

20110316155 - Semiconductor packaging system with multipart conductive pillars and method of manufacture thereof: A method of manufacture of a semiconductor packaging system includes: providing a substrate; mounting a semiconductor chip to the substrate; mounting a pillar ball having a ball height electrically connected to the substrate; mounting an interposer above the semiconductor chip and electrically connected to the pillar ball; and wherein: mounting... Agent:

20110316159 - Chip stack package: A chip stack package includes a plurality of chips that are stacked by using adhesive layers as intermediary media, and a through via electrode formed through the chips to electrically couple the chips. The through via electrode is classified as a power supply through via electrode, a ground through via... Agent:

20110316158 - Method and system for thin multi chip stack package with film on wire and copper wire: A system and method for a thin multi chip stack package with film on wire and copper wire. The package comprises a substrate and a first die overlying the substrate. Copper wires electrically connect the first die to the substrate. A film overlies the first die and a portion of... Agent:

20110316160 - Semiconductor arrangement, semiconductor module, and method for connecting a semiconductor chip to a ceramic substrate: A semiconductor arrangement includes a silicon body having a top surface and a bottom surface, and a thick metal layer arranged on the top surface of the silicon body. The thick metal layer has a bonding surface facing away from the top surface of the silicon body. A bonding wire... Agent: Infineon Technologies Ag

20110316161 - Method of producing a dual damascene multilayer interconnection and multilayer interconnection structure: In an insulating film structure having a barrier insulating film, a via interlayer insulating film, a wiring interlayer insulating film, and a hard mask film stacked in this order on an underlayer wiring, a via hole pattern is formed in the insulating film structure, then a groove pattern is formed... Agent: Renesas Electronics Corporation

20110316164 - Corrugated die edge for stacked die semiconductor package: A semiconductor die and semiconductor package formed therefrom, and methods of fabricating the semiconductor die and package, are disclosed. The semiconductor die includes an edge formed with a plurality of corrugations defined by protrusions between recesses. Bond pads may be formed on the protrusions. The semiconductor die formed in this... Agent:

20110316163 - Integrated circuit packaging system with molded interconnects and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing an integrated circuit device; forming package interconnects adjacent the integrated circuit device, the package interconnects having an internal interconnect side with a lock structure; applying an encapsulation over the integrated circuit device and the package interconnects, the lock... Agent:

20110316162 - Integrated circuit packaging system with trenches and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing a substrate with a material layer including grooves in a fillet region that are substantially parallel and adjacent an integrated circuit; and forming a resin between the substrate and the integrated circuit that contacts a trench trace exposed... Agent:

20110316165 - Semiconductor device and method of fabricating the same: A semiconductor device includes first, second, and third conductive lines, each with a respective line portion formed over a substrate and extending in a first direction and with a respective branch portion extending from an end of the respective line portion in a direction different from the first direction. The... Agent: Samsung Electronics Co., Ltd.

20110316167 - Electrical interconnect for an integrated circuit package and method of making same: An interconnect assembly for an embedded chip package includes a dielectric layer, first metal layer comprising upper contact pads, second metal layer comprising lower contact pads, and metalized connections formed through the dielectric layer and in contact with the upper and lower contact pads to form electrical connections therebetween. A... Agent:

20110316166 - Integrated circuit system with via and method of manufacture thereof: A method of manufacture of an integrated circuit system includes: forming an etch stop layer over a bulk substrate; forming a buffer layer on the etch stop layer; forming a hard mask on the buffer layer; forming a through silicon via through the etch stop layer with the hard mask... Agent: Globalfoundries Singapore Pte. Ltd.

20110316168 - Semiconductor device and method of fabricating the same: A semiconductor device includes a via structure and a conductive structure. The via structure has a surface with a planar portion and a protrusion portion. The conductive structure is formed over at least part of the planar portion and not over at least part of the protrusion portion of the... Agent:

20110316171 - Semiconductor device and method of forming interconnect structure for encapsulated die having pre-applied protective layer: A semiconductor device has a protective layer formed over an active surface of a semiconductor wafer. The semiconductor die with pre-applied protective layer are moved from the semiconductor wafer and mounted on a carrier. The semiconductor die and contact pads on the carrier are encapsulated. The carrier is removed. A... Agent: Stats Chippac, Ltd.

20110316169 - Wiring substrate and method for manufacturing the wiring substrate: A wiring substrate includes a substrate body including a first substrate surface and a second substrate surface, a trench being open toward the first substrate surface, the trench having an inner bottom surface and an inner side surface, a through-hole having a first end communicating with the inner bottom surface... Agent: Shinko Electric Industries Co., Ltd.

20110316170 - Wiring substrate, semiconductor device, and method for manufacturing wiring substrate: A wiring substrate includes a wiring pattern in an uppermost layer that includes pads. A solder resist layer covers the wiring pattern. A recess exposes part of the wiring pattern from the solder resist layer to form pads. The solder resist layer includes a portion formed in a region corresponding... Agent:

20110316172 - Semiconductor package and manufacturing method thereof: There is provided a semiconductor package that includes: a wiring board; a first semiconductor chip mounted on the wiring board; a second semiconductor chip mounted on the first semiconductor chip, wherein a size of second semiconductor chip is larger than that of the first semiconductor chip when viewed from a... Agent: Shinko Electric Industries Co., Ltd.

20110316173 - Electronic device comprising a nanotube-based interface connection layer, and manufacturing method thereof: An electronic device including a first region belonging to a semiconductor device having a first surface; a second region having a second surface; and an adhesion layer, set between the first and second regions, including first fibrils each having respective first and second ends. The first fibrils extend between the... Agent: Stmicroelectronics S.r.l.

20110316174 - Semiconductor integrated circuit device: In a semiconductor integrated circuit device, arrangement relationship of power source area I/O pads differs between a peripheral portion and a center portion of a gate region of a chip. That is, in two columns and two rows of the peripheral portion of the gate region, VDD area I/O pads... Agent: Panasonic Corporation

20110309318 - Nonvolatile semiconductor memory device and method for manufacturing nonvolatile semiconductor memory device: According to one embodiment, a nonvolatile semiconductor memory device includes a first interconnect, a second interconnect and a resistance change layer. The first interconnect extends in a first direction on a major surface of a substrate. The second interconnect extends in a second direction non-parallel to the first direction. The... Agent: Kabushiki Kaisha Toshiba

20110309319 - Horizontally oriented and vertically stacked memory cells: Horizontally oriented and vertically stacked memory cells are described herein. One or more method embodiments include forming a vertical stack having a first insulator material, a first memory cell material on the first insulator material, a second insulator material on the first memory cell material, a second memory cell material... Agent: Micron Technology, Inc.

20110309320 - Method for active pinch off of an ovonic unified memory element: A method of manufacturing a phase change memory (PCM) includes forming a pinch plate layer transversely to a PCM layer that is insulated from the pinch plate layer by a dielectric layer. Biasing the pinch plate layer causes a depletion region to form in the PCM layer. During a read... Agent: Stmicroelectronics S.r.i.

20110309321 - Memristors with a switching layer comprising a composite of multiple phases: A memristor with a switching layer that includes a composite of multiple phases is disclosed. The memristor comprises: a first electrode; a second electrode spaced from the first electrode; and a switching layer positioned between the first electrode and the second electrode, the switching layer comprising the multi-phase composite system... Agent:

20110309322 - Resistance change memory device with three-dimensional structure, and device array, electronic product and manufacturing method therefor: Provided are a resistance change memory device with a three-dimensional structure, a resistance change memory device array, an electronic product, and a manufacturing method therefor. The device array includes a plurality of first directional data lines which are arranged on a substrate in parallel. A conductive pillar is positioned between... Agent: Gwangju Institute Of Science And Technology

20110309323 - Method of manufacturing nano device by arbitrarily printing nanowire devices thereon and intermediate building block useful for the method: A method of manufacturing a nano device by directly printing a plurality of NW devices in a desired shape on a predesigned gate substrate. The method includes preparing an NW solution, preparing a building block for performing decaling onto the substrate by carrying an NW device, forming the NW device... Agent: Industry-academic Cooperation Foundation, Yonsei University

20110309326 - Deep ultraviolet light emitting diode: A light emitting diode is provided, which includes an n-type contact layer and a light generating structure adjacent to the n-type contact layer. The light generating structure includes a set of quantum wells. The contact layer and light generating structure can be configured so that a difference between an energy... Agent:

20110309327 - Light emitting device, method for fabricating light emitting device, light emitting device package, and lighting system: A light emitting device is provided. The light emitting device includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer and comprising a plurality of well layers and a... Agent: Lg Innotek Co., Ltd.

20110309325 - Light source module using quantum dots, backlight unit employing the light source module, display apparatus, and illumination apparatus: A light source module using quantum dots, a backlight unit employing the light source module, a display apparatus, and an illumination apparatus. The light source module includes a light emitting device package including a plurality of light emitting device chips, and a quantum dot sealing package disposed on the light... Agent: Samsung Led Co., Ltd.

20110309328 - Nitride semiconductor light emitting device, epitaxial substrate, and method for fabricating nitride semiconductor light emitting device: Provided is a nitride semiconductor light emitting device including a light emitting layer above a GaN support base with a semipolar surface and allowing for suppression of reduction in luminous efficiency due to misfit dislocations. A nitride semiconductor light emitting device 11 has a support base 13 comprised of a... Agent: Sumitomo Electric Industries, Ltd.

20110309324 - Solid state devices with semi-polar facets and associated methods of manufacturing: Solid state lighting devices with semi-polar or non-polar surfaces and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a substrate material having a substrate surface and an epitaxial silicon structure in direct contact with the substrate surface. The epitaxial silicon structure has... Agent: Micron Technology, Inc.

20110309329 - Nitride semiconductor device: According to one embodiment, a nitride semiconductor device includes a substrate, an Alx1Ga1-x1N first buried layer, an InyAlzGa1-y-zN buried layer and an Alx2Ga1-x2N second buried layer. The substrate has protrusions formed in an in-plane direction on a first major surface, and a depression between adjacent ones of the protrusions. The... Agent: Kabushiki Kaisha Toshiba

20110309330 - 2-dimensional quantum wire array field effect transistor/power-transistor/switch/photo-cell: Applications for large arrays (>1010 parallel QWs) is a power transistor, for small arrays (single or few parallel QWs) it is non-volatile information-storage e.g. mediated via ferromagnetic/ferroelectric layers and/or nanoparticles, where due to the properties of 1-dimensional quantized conductivity multi-level logic is realized. Through optical gating of this transistor, an... Agent:

20110309331 - Solar blind ultra violet (uv) detector and fabrication methods of the same: Described herein is device configured to be a solar-blind UV detector comprising a substrate; a plurality of pixels; a plurality of nanowires in each of the plurality of pixel, wherein the plurality of nanowires extend essentially perpendicularly from the substrate.... Agent: Zena Technologies, Inc.

20110309332 - Epitaxial source/drain contacts self-aligned to gates for deposited fet channels: A method of forming a self-aligned device is provided and includes depositing carbon nanotubes (CNTs) onto a crystalline dielectric substrate, isolating a portion of the crystalline dielectric substrate encompassing a location of the CNTs, forming gate dielectric and gate electrode gate stacks on the CNTs while maintaining a structural integrity... Agent: International Business Machines Corporation

20110309334 - Graphene/nanostructure fet with self-aligned contact and gate: A method for forming a field effect transistor (FET) includes depositing a channel material on a substrate, the channel material comprising one of graphene or a nanostructure; forming a gate over a first portion of the channel material; forming spacers adjacent to the gate; depositing a contact material over the... Agent: International Business Machines Corporation

20110309333 - Semiconductor devices fabricated by doped material layer as dopant source: A method of forming a semiconductor device is provided, in which the dopant for the source and drain regions is introduced from a doped dielectric layer. In one example, a gate structure is formed on a semiconductor layer of an SOI substrate, in which the thickness of the semiconductor layer... Agent: International Business Machines Corporation

20110309335 - Unipolar heterojunction depletion-layer transistor: A depletion-layer transistor comprising a base, an emitter and a collector, in which the emitter contains a tunnel diode which permits a tunnel current of charge carriers from the emitter in the direction of the collector when an emitter-base voltage above a first threshold voltage is applied in the direction... Agent:

20110309336 - Semiconducting graphene composition, and electrical device including the same: A graphene composition including a graphene monolayer and an alkali metal disposed on the graphene monolayer.... Agent: Samsung Electronics Co., Ltd.

20110309341 - Amine polymer compound and light emitting device using the same: wherein Ar1 represents an arylene group or a divalent group comprising two or more directly bonded arylene groups; Ar4 and Ar5 represent an aryl group or a monovalent aromatic heterocyclic group; Ar2 and Ar3 represent an arylene group or a divalent aromatic heterocyclic group; R6 represents a hydrogen atom, an... Agent: Sumitomo Chemical Company, Limited

20110309349 - Anode structure for use in organic el device, production method thereof and organic el device: The present invention relates to an anode structure for use in a top-emission type organic EL device which comprises a laminated structure comprising an anode layer made of at least one selected from the group consisting of aluminum, aluminum alloys, silver and silver alloys; and a buffer layer directly provided... Agent: Mitsui Mining & Smelting Co., Ltd.

20110309350 - Compound and device using same: A compound which contains a structure represented by formula (1) and has a light absorption end wavelength of 600 nm or more.... Agent: Sumitomo Chemical Company, Limited

20110309345 - Compound for organic electroluminescent device and organic electroluminescent device having the same: in which R1, R2, and R3 are each independently selected from the group consisting of a hydrogen, an alkyl having 1 to 15 carbons atoms, an aryl group having 6 to 15 carbons atoms, an alkyl substituted, an aryl substituted or unsubstituted triphenylsilyl, and a diphenylphosphine oxide represented by the... Agent: E-ray Optoelectronics Technology Co., Ltd.

20110309351 - Light emitting device: An object of the present invention is to provide a light emitting element or a light emitting device that can be formed without any regard for a work function of an electrode. Another object of the invention is to provide a light emitting element or a light emitting device in... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110309338 - Materical for organic electroluminescent devices and organic electroluminescent devices made by using the same: A material for electroluminescent devices which comprises a compound in which a heterocyclic group having nitrogen is bonded to carbazolyl group and an organic electroluminescent device having at least one organic thin film layer which is sandwiched between the cathode and the anode and contains the above material in at... Agent: Idemitsu Kosan Co., Ltd.

20110309337 - Organic el device: An organic EL device includes: an anode (3); a cathode (4); and an organic thin-film layer (5) provided between the anode (3) and the cathode (4). The organic thin-film layer (5) includes: a fluorescent-emitting layer (51) containing a fluorescent host and a blue fluorescent dopant; a red phosphorescent-emitting layer (52)... Agent: Idemitsu Kosan Co., Ltd.

20110309347 - Organic electroluminescence device having anode including metal oxide and conductive polymer, light emission apparatus, and method of fabricating organic electroluminescence device: An organic electroluminescence device includes a cathode, a stacked structure provided on the cathode and including an organic layer that includes an organic light emitting layer, and a transparent anode provided on the stacked structure, The transparent anode includes a metal oxide and a conductive polymer.... Agent:

20110309352 - Organic electroluminescent element, display device and lighting device: Disclosed is an organic electroluminescent device which is free from color shift while having high efficiency and long life. Also disclosed are a display and illuminating device comprising such an organic electroluminescent device.... Agent: Konica Minolta Holdings, Inc.

20110309340 - Organic electronic component and method for the production thereof: An organic electronic component, comprising a substrate, a first electrode, a second electrode, an electron-conducting layer which is arranged such that it is electrically conductively connected to at least one of the electrodes, wherein the electron-conducting layer is obtained by joint vaporization of a metal complex with an organic compound.... Agent: Osram Opto Semiconductors Gmbh

20110309346 - Organic electronic devices comprising a layer comprising at least one metal organic compound and at least one metal oxide: The present invention relates to an organic electronic device including a first electrode, a second electrode and a first organic layer interposed between the first electrode and the second electrode, wherein the first organic layer comprises at least one metal organic compound and at least one metal oxide. The present... Agent: Basf Se

20110309343 - Organic electronic devices comprising a layer of a dibenzofurane compound and a 8-hydroxypquinolinolato earth alkaline metal, or alkali metal complex: e

20110309344 - Organic electronic devices comprising a layer of a pyridine compound and a 8-hydroxypquinolinolato earth alkaline metal, or alkali metal complex:

20110309348 - Organic light-emitting device:

20110309339 - Organic light-emitting display device and method of manufacturing the same: An organic light-emitting display device includes an active layer of a thin film transistor arranged on a substrate, a first insulating layer and a gate electrode arranged on the active layer, the gate electrode including a first transparent conductive layer and a first metal layer, a second insulating layer arranged... Agent: Samsung Mobile Display Co., Ltd.

20110309342 - Polymer light-emitting material, metoho for producing the same, and organic electroluminescent device: Disclosed is a polymer light-emitting material for an organic electroluminescent device that displays excellent light-emitting performance and is applicable to a wet process. The polymer light-emitting material for an organic electroluminescent device is obtained by subjecting a thermoplastic resin having an Mw of 2,000-1,000,000 and containing a functional group in... Agent:

20110309354 - Large-scale fabrication of vertically aligned zno nanowire arrays: In a method for growing a nanowire array, a photoresist layer is placed onto a nanowire growth layer configured for growing nanowires therefrom. The photoresist layer is exposed to a coherent light interference pattern that includes periodically alternately spaced dark bands and light bands along a first orientation. The photoresist... Agent: Georgia Tech Research Corporation

20110309356 - Method for forming semiconductor film, method for forming semiconductor device and semiconductor device: A method for forming a SnO-containing semiconductor film includes a first step of forming a SnO-containing film; a second step of forming an insulator film composed of an oxide or a nitride on the SnO-containing film to provide a laminated film including the SnO-containing film and the insulator film; and... Agent: Canon Kabushiki Kaisha

20110309355 - Semiconductor device: An object is to provide a semiconductor device having good electrical characteristics. A gate insulating layer having a hydrogen concentration less than 6×1020 atoms/cm3 and a fluorine concentration greater than or equal to 1×1020 atoms/cm3 is used as a gate insulating layer in contact with an oxide semiconductor layer forming... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110309353 - Semiconductor device and method for manufacturing the same: A semiconductor device includes, in a first region over a semiconductor substrate, a first insulating layer, a first wiring, a second insulating layer, a third insulating layer, and a via and a second wiring embedded in the second insulating layer and the third insulating layer through a barrier metal, and... Agent: Renesas Electronics Corporation

20110309357 - Measuring apparatus: A measuring apparatus including a first chip, a first circuit layer, a first heater, a first stress sensor and a second circuit layer is provided. The first chip has a first through silicon via, a first surface and a second surface opposite to the first surface. The first circuit layer... Agent: Industrial Technology Research Institute

20110309358 - Semiconductor chip with fine pitch leads for normal testing of same: A semiconductor chip includes a semiconductor substrate having a top surface and a bottom surface. A circuit layer having bonding pads may be formed over the top surface of the semiconductor substrate. Through electrodes may be formed to pass from a bottom surface to a top surface of the semiconductor... Agent: Hynix Semiconductor Inc.

20110309359 - Semiconductor device: In a test method of stacked LSIs connected by Through Silicon Vias, it is difficult to perform a failure diagnosis by using a conventional device test method to only one side of a silicon wafer, there is a possibility of yield degradation at a stacking time of LSIs, and a... Agent:

20110309360 - Process for forming an electroactive layer: There is provided a process for forming a layer of electroactive material having a substantially flat profile. The process includes: providing a workpiece having at least one active area; depositing a liquid composition including the electroactive material onto the workpiece in the active area, to form a wet layer; treating... Agent: E.i. Du Pont De Nemours And Company

20110309361 - Photoelectric conversion element, display device, electronic device, and method for manufacturing photoelectric conversion element: A photoelectric conversion element includes a first conductive layer over a substrate; a first insulating layer covering the first conductive layer; a first semiconductor layer over the first insulating layer; a second conductive layer formed over the first semiconductor layer; an impurity semiconductor layer over the second semiconductor layer; a... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110309363 - Active matrix substrate, liquid crystal display apparatus having the same, and method for manufacturing active matrix substrate: A gate electrode is provided on a layered structure formed by successively stacking a conductive layer and an insulating layer. A storage capacitor includes a lower electrode formed in a same layer and made of a same material as the conductive layer, a dielectric layer provided on the lower electrode,... Agent: Sharp Kabushiki Kaisha

20110309367 - Display panel and liquid crystal display including the same: The present invention relates to a display panel and a liquid crystal display including the same. The display panel includes a pixel electrode, which includes a first subpixel electrode, a second subpixel electrode, and a third subpixel electrode insulated from each other, a first thin film transistor connected to the... Agent: Samsung Electronics Co., Ltd.

20110309362 - Flat panel display apparatus and method of manufacturing the same: A flat panel display apparatus including a gate electrode on a substrate, a first insulating layer and a semiconductor layer sequentially stacked on the gate electrode and including a transparent conductive oxide, a capacitor first electrode extending on a plane on which the gate electrode extends, and a capacitor second... Agent:

20110309366 - Organic thin film transistor substrate, its manufacturing method, image display panel, and its manufacturing method: The present invention is a method for manufacturing an organic thin-film transistor substrate including an organic thin-film transistor as a transistor element, and an object of the invention is to provide a manufacturing method capable of forming a bank in a smaller number of steps. The method for manufacturing the... Agent: Sumitomo Chemical Company, Limited

20110309364 - Semiconductor display device: It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110309365 - Thin film transistor backplane: A fabrication process for a device such as a backplane for a flat panel display includes depositing thin film layers on a substrate, forming a 3D template overlying the thin film layers, and etching the 3D template and the thin film layers to form gate lines and transistors from the... Agent:

20110309368 - Semiconductor device: Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements,... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110309369 - Liquid crystal display device: Techniques are provided for unifying steps of sealing material so that the yield and the reliability of a liquid-crystal display device become high. A starting film of scanning lines is patterned so that prismatic dummy wirings 301 for the first layer which are not electrically connected are formed in regions... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110309370 - Systems and methods for the crystallization of thin films: Crystallization of thin films using pulsed irradiation The method includes continuously irradiating a film having an x-axis and a y-axis, in a first scan in the x-direction of the film with a plurality of line beam laser pulses to form a first set of irradiated regions, translating the film a... Agent: The Trustees Of Columbia University In The City Of New York

20110309372 - Enhancement-mode hfet circuit arrangement having high power and a high threshold voltage: A circuit includes input drain, source and gate nodes. The circuit also includes a group III nitride enhancement-mode HFET having a source, drain and gate and a voltage shifter having a first terminal connected to the gate of the enhancement mode HFET at a common junction. The circuit also includes... Agent: Velox Semiconductor Corporation

20110309374 - Fast thermal annealing of gan leds: Methods of performing fast thermal annealing in forming GaN light-emitting diodes (LEDs) are disclosed, as are GaN LEDs formed using fast thermal annealing having a time duration of 10 seconds or faster. An exemplary method includes forming a GaN multilayer structure having a n-GaN layer and a p-GaN layer that... Agent: Ultratech, Inc.

20110309371 - Schottky diode structure and method for fabricating the same: A Schottky diode structure and a method for fabricating the same, which are based on the principle of charge compensation, wherein a P-type gallium nitride layer is added to a Schottky diode structure, and wherein the PN junction of the P-type gallium nitride layer and the N-type gallium nitride layer... Agent:

20110309373 - Singulation method and resulting device of thick gallium and nitrogen containing substrates: A method for singulation of thick GaN wafers (e.g., 300-400 um) through the use of a double-side laser-scribe process. In a preferred embodiment, the patterned GaN substrate is processed using a laser-scribe on each side of the substrate to form scribe lines. The scribe lines are aligned to each other.... Agent: Soraa, Inc.

20110309376 - Method of cleaning silicon carbide semiconductor, silicon carbide semiconductor, and silicon carbide semiconductor device: A method of cleaning an SiC semiconductor capable of exhibiting an effect of cleaning an SiC semiconductor is provided. An SiC semiconductor and an SiC semiconductor device capable of achieving improved characteristics are provided. The method of cleaning an SiC semiconductor includes the steps of forming an oxide film on... Agent: Sumitomo Electric Industries, Ltd.

20110309375 - Semiconductor device: A semiconductor device includes semiconductor elements mounted on a heat spreader, lead frames connected to the semiconductor elements, and a molding resin which holds them and forms a housing. Upper portions and side surfaces of the semiconductor elements are covered with an organic thin film which is formed between the... Agent: Mitsubishi Electric Corporation

20110309385 - Display panel device and method of manufacturing the same: A display panel device having a structure that is more reliable than that of a conventional display panel device includes: a bank and an opening surrounded by an inclined side wall of the bank; a pixel electrode that is a first electrode layer formed on the opening of the bank;... Agent: Panasonic Corporation

20110309386 - Lamp having outer shell to radiate heat of light source: A lamp includes an outer shell having heat conductivity, a base provided in the outer shell, and a cover provided in the outer shell. The outer shell has a light source support, and a heat radiating surface exposed to the outside of the outer shell. The light source support is... Agent: Toshiba Lighting & Technology Corporation

20110309383 - Light emitting device, light emitting device package, and lighting system: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a crystalline substrate having a plurality of side surfaces, a light emitting structure layer comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor... Agent: Lg Innotek Co., Ltd.

20110309381 - Light-emitting device and lighting apparatus: According to one embodiment, a light-emitting device includes a series circuit, a substrate, and a sealing member. The series circuit includes a plurality of parallel circuits each including a plurality of light-emitting elements connected in parallel. The plurality of parallel circuits are connected in series. A plurality of groups are... Agent: Toshiba Lighting & Technology Corporation

20110309379 - Light-emitting device and luminare: According to one embodiment, a light-emitting device includes a substrate, a plurality of light-emitting elements and a sealing resin. The substrate is formed in a substantially rectangular shape. The plurality of light-emitting elements forms a plurality of rows by being arranged in a direction perpendicular to a longer dimension of... Agent: Toshiba Lighting & Technology Division

20110309378 - Method for manufacturing a monolithic led micro-display on an active matrix panel using flip-chip technology and display apparatus having the monolithic led micro-display: A high-resolution, Active Matrix (AM) programmed monolithic Light Emitting Diode (LED) micro-array is fabricated using flip-chip technology. The fabrication process includes fabrications of an LED micro-array and an AM panel, and combining the resulting LED micro-array and AM panel using the flip-chip technology. The LED micro-array is grown and fabricated... Agent: Nano And Advanced Materials Institute Limited

20110309380 - Mother substrate, array substrate and method for manufacturing the same: The present invention relates to a mother substrate and a method for manufacturing the same, the mother substrate comprising: a substrate, comprising at least one display region and pre-cutting regions in a periphery of the display region, wherein the display region comprises gate scanning lines and data scanning lines, the... Agent: Beijing Boe Optoelectronics Technology Co., Ltd.

20110309382 - Nanowire led structure and method for manufacturing the same: A light emitting diode (LED) structure includes a plurality of devices arranged side by side on a support layer. Each device includes a first conductivity type semiconductor nanowire core and an enclosing second conductivity type semiconductor shell for forming a pn or pin junction that in operation provides an active... Agent: Glo Ab

20110309377 - Optoelectronic module having a carrier substrate and a plurality of radiation-emitting semiconductor components and method for the production thereof: An optoelectronic module is specified, comprising a carrier substrate (1) and a plurality of radiation-emitting semiconductor components (2). The carrier substrate (1) comprises structured conductor tracks. The radiation-emitting semiconductor components (2) each comprise an active layer (2a) suitable for generating electromagnetic radiation, a first contact area (21) and a second... Agent: Osram Opto Semiconductors Gmbh

20110309384 - Semiconductor light emitting device: The present invention relates to a semiconductor light emitting device including: a substrate for element mounting; a wiring provided on the substrate; an LED element provided on the substrate and electrically connected to the wiring; an encapsulating resin layer for encapsulating the LED element; and a wavelength conversion layer which... Agent: Nitto Denko Corporation

20110309389 - Full-color active matrix organic light emitting display with hybrid: A full-color AM OLED includes a transparent substrate, a color filter positioned on an upper surface of the substrate, and a metal oxide thin film transistor backpanel positioned in overlying relationship on the color filter and defining an array of pixels. An array of OLEDs is formed on the backpanel... Agent:

20110309387 - Light emitting diode and light module having same: An LED includes an LED chip, a first package configured for packaging the LED chip, the first package including a flat first surface, and a second package including a second surface opposing the first surface. A micro-structure is defined in the second surface and protruding toward the first surface. A... Agent: Hon Hai Precision Industry Co., Ltd.

20110309390 - Lighting device comprising leds with phosphor layers: A lighting device comprising LEDs with phosphor layers includes a plurality of LED sets which can emit light with a peak emission wavelength between 360 nm and 490 nm; and a plurality of sets of phosphor layers covering the corresponding LED sets among the plurality of LED sets. At least... Agent: Semileds Optoelectronics Co., Ltd.

20110309388 - Semiconductor light-emitting device and manufacturing method: A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer located over at least one semiconductor light-emitting chip in order to emit various colored lights including white light. The semiconductor light-emitting device can include a base board, a frame located on the base... Agent:

20110309395 - Color variable light emitting device: The present invention relates to a color variable light emitting device (100; 200; 300; 400) comprising at least one light source (101; 201; 303; 401) and at least one deformable element (102; 202; 301; 402). The deformable element (102; 202; 301; 402) comprises particles of at least one wavelength converting... Agent: Koninklijke Philips Electronics N.v.

20110309398 - Composite film and semiconductor light emitting device using the same: The present invention relates to a composite film including a wavelength conversion layer and a diffusive reflection resin layer in a laminated state and being used in a semiconductor light emitting device, in which the wavelength conversion layer contains a phosphor material which absorbs a part or all of excitation... Agent: Nitto Denko Corporation

20110309399 - Fluorescent substance, method of manufacturing the fluorescent substance, and light emitting device using the fluorescent substance: A fluorescent substance is provided having excellent temperature properties and capable of being excited by light in the region from near ultraviolet to short-wavelength visible light to emit light of yellow to red color. A process for producing the fluorescent substance, and a light emitting device using the fluorescent substance... Agent:

20110309394 - Led and method of manufacturing the same: An exemplary LED includes an epitaxial layer, an electrically conductive base, a transparent, electrically-conducting layer and a metallic pad. The epitaxial layer includes an N-type layer, a P-type layer and a light-emitting quantum-well layer between the N-type layer and P-type layer. The electrically conductive base is coupled to the P-type... Agent: Hon Hai Precision Industry Co., Ltd.

20110309396 - Led module having a platform with a central recession: An LED module comprises a platform having a recession, wherein the recession presents a center section with a bottom and an enlarged section surrounding the center portion. An LED chip is arranged on the bottom of the center section. A bond wire leads from the LED chip to the bottom... Agent: Ledon Lighting Jennersdorf Gmbh

20110309391 - Lighting emitting device package and method of fabricating the same: Provided is a light emitting device package and a method of fabricating the same. The light emitting device package comprises a package body having a cavity, a seed layer on a surface of the package body, a conductive layer on the seed layer, a mirror layer on the conductive layer,... Agent: Lg Innotek Co., Ltd

20110309400 - Nitride semiconductor device and manufacturing method of the device: A nitride semiconductor device includes a first nitride semiconductor layer having a C-plane as a growth surface, and unevenness in an upper surface; and a second nitride semiconductor layer formed on the first nitride semiconductor layer to be in contact with the unevenness, and having p-type conductivity. The second nitride... Agent: Panasonic Corporation

20110309392 - Optoelectric component: An optoelectronic component (1) is specified, comprising a connection carrier (2) on which a radiation-emitting semiconductor chip (3) is arranged, and a conversion element (4) fixed to the connection carrier (2). The conversion element (4) spans the semiconductor chip (3) in such a way that the semiconductor chip (3) is... Agent: Osram Opto Semiconductors Gmbh

20110309393 - Packaged leds with phosphor films, and associated systems and methods: Packaged LEDs with phosphor films, and associated systems and methods are disclosed. A system in accordance with a particular embodiment of the disclosure includes a support member having a support member bond site, an LED carried by the support member and having an LED bond site, and a wire bond... Agent: Micron Technology, Inc.

20110309397 - Pixel structure and manufacturing method thereof: A pixel structure including a substrate, a color filter layer, a conductive light-shielding layer, a buffer layer, a scan line, a data line, an active device, and a pixel electrode is provided. The substrate has a pixel region. The color filter layer is disposed corresponding to the pixel region. The... Agent: Au Optronics Corporation

20110309404 - Light emitting device and lighting system having the same: Provided is a light emitting device. The light emitting device includes a plurality of metal layers spaced from each other, a first insulation film having an opened area in which a portion of the plurality of metal layers is opened, the first insulation film being disposed around top surfaces of... Agent: Lg Innotek Co., Ltd.

20110309405 - Light emitting device and lighting system having the same: Provided is a light emitting device. The light emitting device includes a plurality of metal layers including first and second metal layers spaced from each other, a first insulation film disposed on a top surface of the plurality of metal layers, the first insulation film having a -width wider than... Agent: Lg Innotek Co. Ltd.

20110309401 - Light emitting diode module: A light emitting diode (LED) module has a hexagonal substrate and at least one LED mounted on the substrate. The substrate may have three terminal sets and three sockets. Each terminal set of one LED module has a positive terminal and a negative terminal plugged respectively to a positive jack... Agent: Shin Zu Shing Co., Ltd.

20110309406 - Light-emitting apparatus package, light-emitting apparatus, backlight apparatus, and display apparatus: A light-emitting apparatus package of the present invention includes (i) an electrically insulated ceramic substrate, (ii) a first concave section formed in the direction of thickness of the ceramic substrate so as to form a light exit aperture in a surface of the ceramic substrate, (iii) a second concave section... Agent: Sharp Kabushiki Kaisha

20110309403 - Lighting apparatus and method of manufacturing the lighting apparatus: The invention of the present application provides a lighting apparatus in which electric wires are connected to a substrate 3 on which light-emitting diodes 31, 32, and 33 are mounted and synthetic resin material is used to closely cover the electric wires 52 and 53, the substrate 3, and the... Agent:

20110309402 - Pixel structure and method of making the same: A pixel structure includes a substrate, a gate line and a gate electrode disposed on the substrate, an insulating layer covering the substrate, a semiconductor layer disposed on the insulating layer, a data line, a source electrode, and a drain electrode which are disposed on the insulating layer and the... Agent:

20110309407 - Cycloalkyl group-containing silicone resin composition and a method of using the same: One object of the present invention is to provide a silicone resin composition having remarkably low gas permeability which is useful for a purpose requiring lower gas permeability. Further, another object of the present invention is to provide an optical semiconductor device provided with a cured product obtained by curing... Agent:

20110309408 - Semiconductor device and method of producing same: A semiconductor device provided with: an island and an island which are separated from each other; leads which approach the islands at one end; a control element which is attached to the island and is connected to a lead through a thin metal wire; and a switching element which is... Agent: On Semiconductor Trading, Ltd.

20110309409 - Semiconductor device: A semiconductor device includes: a semiconductor substrate having an electronic circuit including a power supply line and a ground line formed thereon; and an electrostatic discharge protection element provided between the power supply line and the ground line on the semiconductor substrate, the electrostatic discharge protection element including a thyristor... Agent: Sony Corporation

20110309410 - Reduced dark current photodetector: A photo-detector comprising: a photo absorbing layer comprising an n-doped semiconductor exhibiting a valence band energy level; a barrier layer, a first side of the barrier layer adjacent a first side of the photo absorbing layer, the barrier layer exhibiting a valence band energy level substantially equal to the valence... Agent:

20110309411 - Field effect transistor: An insulating film is provided over one surface of a first semiconductor layer including a first oxide semiconductor including indium as a main component, and a second semiconductor layer including an i-type second oxide semiconductor is provided in contact with the other surface. The energy difference between a vacuum level... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110309412 - Superjunction collectors for transistors & semiconductor devices: Superjunction collectors for transistors are discussed in this application. According to one embodiment, a bipolar transistor having a superjunction collector structure can comprise a collector electrode, a base electrode, an emitter electrode, a collector-base space charge region, and a superjunction collector. The collector-base space charge region can be disposed in... Agent: Georgia Tech Research Corporation

20110309413 - Semiconductor device: A semiconductor device includes: a first semiconductor layer including AlXGa1-XN (0≦X≦1); a second semiconductor layer provided on the first semiconductor layer, including AlYGa1-YN (0≦Y≦1, X<Y), and having a larger bandgap than the first semiconductor layer; a source electrode provided on the second semiconductor layer; a drain electrode provided on the... Agent: Kabushiki Kaisha Toshiba

20110309414 - Diode polarity for diode array: A memory-array is disclosed in which an array of non-linear conductors such as diodes is constructed having an area per memory cell of 4F2 and comprises a plurality of conductors fabricated as doped semiconductor conducting lines in the substrate such that, during normal operation, an unselected conductor has a zero... Agent:

20110309415 - Sensor using ferroelectric field-effect transistor: m

20110309417 - Method for reshaping silicon surfaces with shallow trench isolation: A method for making a semiconductor device by reshaping a silicon surface with a sacrificial layer is presented. In the present invention the steps of forming a sacrificial dielectric layer and removing the sacrificial dielectric layer are repeated multiple times in order to remove sharp edges from the silicon surface... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110309416 - Structure and method to reduce fringe capacitance in semiconductor devices: A method of forming a semiconductor device is provided that includes providing a gate structure on a semiconductor substrate that includes at a gate conductor. Forming a sacrificial material layer on at least the sidewall surfaces of the gate conductor, and forming a raised source region and a raised drain... Agent: International Business Machines Corporation

20110309418 - Magnetoresistance effect element and magnetic random access memory: A magnetoresistance effect element includes: a first ferromagnetic layer having invariable magnetization perpendicular to a film plane; a second ferromagnetic layer having variable magnetization perpendicular to the film plane; a first nonmagnetic layer interposed between the first ferromagnetic layer and the second ferromagnetic layer; a third ferromagnetic layer provided on... Agent: Kabushiki Kaisha Toshiba

20110309419 - Process of forming an electronic device including a resistor-capacitor filter: A process of forming an electronic device can include forming a capacitor dielectric layer over a base region, wherein the base region includes a base semiconductor material, forming a gate dielectric layer over a substrate, forming a capacitor electrode over the capacitor dielectric layer, forming a gate electrode over the... Agent: Freescale Semiconductor, Inc.

20110309420 - Capacitors integrated with metal gate formation: A semiconductor structure including a capacitor having increased capacitance and improved electrical performance is provided. The semiconductor structure includes a substrate and a MIM capacitor over the substrate. The MIM capacitor includes a bottom plate, an insulating layer over the bottom plate, and a top plate over the insulating layer.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110309421 - One-time programmable memory and method for making the same: A one time programmable nonvolatile memory formed from metal-insulator-semiconductor cells. The cells are at the crosspoints of conductive gate lines and intersecting doped semiconductor lines formed in a semiconductor substrate.... Agent:

20110309422 - Semiconductor device: According to one embodiment, a semiconductor device includes a first resistance element including a first conductive material, an inter-gate insulation film formed on both ends of the first conductive material in a first direction, and a second conductive material formed above the first conductive material and configured to connect with... Agent:

20110309423 - Semiconductor device having a trench gate and method for manufacturing: A semiconductor device having a trench gate and method for manufacturing is disclosed. One embodiment includes a first semiconductor area and a second semiconductor area, a semiconductor body area between the first semiconductor area and the second semiconductor area, and a gate arranged in a trench and separated from the... Agent: Infineon Technologies Ag

20110309425 - Air gap isolation in non-volatile memory: Air gap isolation in non-volatile memory arrays and related fabrication processes are provided. Electrical isolation between adjacent active areas of a substrate can be provided, at least in part, by bit line air gaps that are elongated in a column direction between the active areas. At least one cap is... Agent:

20110309426 - Metal control gate structures and air gap isolation in non-volatile memory: High-density semiconductor memory utilizing metal control gate structures and air gap electrical isolation between discrete devices in these types of structures are provided. During gate formation and definition, etching the metal control gate layer(s) is separated from etching the charge storage layer to form protective sidewall spacers along the vertical... Agent:

20110309428 - Semiconductor device: A semiconductor device includes a plurality of nonvolatile memory cells (1). Each of the nonvolatile memory cells comprises a MOS type first transistor section (3) used for information storage, and a MOS type second transistor section (4) which selects the first transistor section. The second transistor section has a bit... Agent: Renesas Electronics Corporation

20110309424 - Structure of memory device and process for fabricting the same: A structure of a memory cell of a static random memory device and a process for fabricating the same are disclosed. The memory cell includes a substrate having an active region including an N-well and a shallow trench isolation structure; a first gate and a second gate formed over the... Agent: United Microelectronics Cor

20110309427 - Switching device and testing apparatus: There is provided a switching device that electrically connects or disconnects a first terminal and a second terminal to/from each other. The switching device includes a semiconductor layer, a drain electrode that is formed in the semiconductor layer, where the drain electrode is connected to the first terminal, a source... Agent: Advantest Corporation

20110309430 - Non-volatile memory with flat cell structures and air gap isolation: High-density semiconductor memory is provided with enhancements to gate-coupling and electrical isolation between discrete devices in non-volatile memory. The intermediate dielectric between control gates and charge storage regions is varied in the row direction, with different dielectric constants for the varied materials to provide adequate inter-gate coupling while protecting from... Agent:

20110309429 - Nonvolatile semiconductor memory device and manufacturing method thereof: According to one embodiment, in a floating-gate type nonvolatile semiconductor memory device in which a tunnel dielectric film and a control gate electrode are connected between memory cells adjacent via a shallow trench isolation, each of a floating gate electrode and the control gate electrode includes an electric-field concentrated portion... Agent: Kabushiki Kaisha Toshiba

20110309431 - Nonvolatile semiconductor memory device and method for manufacturing same: According to one embodiment, a nonvolatile semiconductor memory device includes a stacked structure, a select gate electrode, a semiconductor pillar, a memory layer, and a select gate insulating film. The stacked structure includes a plurality of electrode films stacked in a first direction and an interelectrode insulating film provided between... Agent: Kabushiki Kaisha Toshiba

20110309432 - Nonvolatile semiconductor memory device and method for manufacturing the same: According to one embodiment, a nonvolatile semiconductor memory device includes a stacked body including electrode films stacked in a first direction; a conductive pillar piercing the stacked body in the first direction; a inner insulating film; a semiconductor pillar; an intermediate insulating film; a memory layer; and an outer insulating... Agent: Kabushiki Kaisha Toshiba

20110309433 - Semiconductor device with resistor pattern and method of fabricating the same: Disclosed is a semiconductor device with a resistor pattern and methods of fabricating the same. Embodiments of the present invention provide a method of fabricating a resistor pattern having high sheet resistance by using a polycide layer for a gate electrode in a semiconductor device with the resistor pattern. Embodiments... Agent:

20110309434 - Nonvolatile memory device and manufacturing method thereof: A nonvolatile memory device and a manufacturing method thereof are provided. The manufacturing method includes the following steps. First, a substrate is provided. Then, a tunneling dielectric layer is formed on the substrate, and a dummy gate is form on the tunneling dielectric layer. Subsequently, an interlayer dielectric layer is... Agent:

20110309435 - Buried gate semiconductor device and method of manufacturing the same: A semiconductor device includes a buried gate in a semiconductor substrate, and a nitride layer, over at least the buried gate, whose upper portion is at substantially the same height as an upper portion of a peripheral bit line, where the peripheral bit line is over an interlayer insulating layer.... Agent: Hynix Semiconductor Inc.

20110309436 - Power semiconductor device: A gate electrode is provided for controlling a current flowing through a semiconductor layer. A gate insulating film electrically insulates the semiconductor layer and the gate electrode from each other. A conductor portion is provided on the semiconductor layer, and electrically connected with the semiconductor layer. An interlayer insulating film... Agent: Mitsubishi Electric Corporation

20110309437 - Semiconductor device: To attain reduction in size of a semiconductor device having a power transistor and an SBD, a semiconductor device according to the present invention comprises a first region and a second region formed on a main surface of a semiconductor substrate; plural first conductors and plural second conductors formed in... Agent: Renesas Electronics Corporation

20110309438 - Semiconductor apparatus and manufacturing method thereof: The semiconductor apparatus according to the present invention includes: a second-conductivity-type first diffusion region formed on the semiconductor layer; a first-conductivity-type second diffusion region formed in the first diffusion region; a second-conductivity-type first high concentration diffusion region and a first-conductivity-type second high concentration diffusion region formed in the second diffusion... Agent: Sharp Kabushiki Kaisha

20110309439 - Semiconductor device and method for manufacturing the same: According to one embodiment, a semiconductor device includes a semiconductor substrate, a first conductivity-type region, a second conductivity-type source region, a gate insulating film and a gate electrode. The first conductivity-type region is provided in an upper layer portion of the semiconductor substrate. The second conductivity-type source region and a... Agent: Kabushiki Kaisha Toshiba

20110309440 - High voltage transistor using diluted drain: An integrated circuit containing an extended drain MOS transistor may be formed by forming a drift region implant mask with mask fingers abutting a channel region and extending to the source/channel active area, but not extending to a drain contact active area. Dopants implanted through the exposed fingers form lateral... Agent: Texas Instruments Incorporated

20110309441 - Integrated semiconductor device having an insulating structure and a manufacturing method: An integrated semiconductor device is provided. The integrated semiconductor device has a first semiconductor region of a second conductivity type, a second semiconductor region of a first conductivity type forming a pn-junction with the first semiconductor region, a non-monocrystalline semiconductor layer of the first conductivity type arranged on the second... Agent: Infineon Technologies Ag

20110309442 - Laterally double diffused metal oxide semiconductor transistor having a reduced surface field structure and method therefor: An LDMOS transistor includes a substrate of semiconductor material, an insulator layer overlying the substrate, a semiconductor layer overlying the insulator layer, a RESURF region, and a gate. The semiconductor layer includes a first conductivity type well region, a second conductivity type source region in contact with the first conductivity... Agent:

20110309443 - Method for controlling impurity density distribution in semiconductor device and semiconductor device made thereby: The present invention discloses a method for controlling the impurity density distribution in semiconductor device and a semiconductor device made thereby. The control method includes the steps of: providing a substrate; defining a doped area which includes at least one first region; partially masking the first region by a mask... Agent: Richtek Technology Corporation, R.o.c.

20110309444 - Thin film transistor having a barrier layer as a constituting layer and cu-alloy sputtering target used for sputter film formation of the barrier layer: This Cu alloy sputtering target includes, in terms of atomic percent: Al: 1% to 10%; and Ca: 0.1% to 2%, with the balance being Cu and 1% or less of inevitable impurities. This thin film transistor includes: a gate electrode layer joined to the surface of a glass substrate through... Agent: Mitsubishi Materials Corporation

20110309445 - Semiconductor fabrication: Embodiments of the present invention provide the ability to fabricate devices having similar physical dimensions, yet with different operating characteristics due to the different effective channel lengths. The effective channel length is controlled by forming an abrupt junction at the boundary of the gate and at least one source or... Agent: International Business Machines Corporation

20110309446 - Strained thin body cmos device having vertically raised source/drain stressors with single spacer: A method of forming a transistor device includes forming a patterned gate structure over a semiconductor substrate; forming a spacer layer over the semiconductor substrate and patterned gate structure; removing horizontally disposed portions of the spacer layer so as to form a vertical sidewall spacer adjacent the patterned gate structure;... Agent: International Business Machines Corporation

20110309447 - Transistor with threshold voltage set notch and method of fabrication thereof: A structure and method of fabrication thereof relate to a Deeply Depleted Channel (DDC) design, allowing CMOS based devices to have a reduced σVT compared to conventional bulk CMOS and can allow the threshold voltage VT of FETs having dopants in the channel region to be set much more precisely.... Agent:

20110309448 - Differentially recessed contacts for multi-gate transistor of sram cell: A complementary metal-oxide-semiconductor static random access memory cell that includes a plurality of P-channel multi-gate transistors and a plurality of N-channel multi-gate transistors. Each transistor includes a gate electrode and source and drain regions separated by the at least one gate electrode. The SRAM cell further includes a plurality of... Agent: International Business Machines Corporation

20110309449 - Interface-free metal gate stack: A method of fabricating a gate stack for a transistor includes forming a high dielectric constant layer on a semiconductor layer. A metal layer is formed on the high dielectric constant layer. A silicon containing layer is formed over the metal layer. An oxidized layer incidentally forms during the silicon... Agent: International Business Machines Corporation

20110309451 - Manufacturing method of semiconductor device and semiconductor device: A manufacturing method of a semiconductor device includes: forming a first gate insulating film on a semiconductor substrate in first and second regions in an active area; forming first gate electrodes on the first gate insulating film in the first and second regions; forming source/drain regions by introducing impurities at... Agent: Sony Corporation

20110309452 - Methods of manufacturing semiconductor devices: A semiconductor device includes a substrate, an NMOSFET and a PMOSFET disposed on the substrate, a first stress nitride layer pattern having a tensile stress and disposed On the NMOSFET, an interface oxynitride layer pattern having a first compressive stress and disposed on the PMOSFET and a second stress nitride... Agent: Samsung Electronics Co., Ltd.

20110309450 - Semiconductor structure and method of fabrication thereof with mixed metal types: A semiconductor structure includes a first PMOS transistor element having a gate region with a first gate metal associated with a PMOS work function and a first NMOS transistor element having a gate region with a second metal associated with a NMOS work function. The first PMOS transistor element and... Agent: Suvolta, Inc.

20110309453 - Elevation of transistor channels to reduce impact of shallow trench isolation on transistor performance: Roughly described, transistor channel regions are elevated over the level of certain adjacent STI regions. Preferably the STI regions that are transversely adjacent to the diffusion regions are suppressed, as are STI regions that are longitudinally adjacent to N-channel diffusion regions. Preferably STI regions that are longitudinally adjacent to P-channel... Agent:

20110309454 - Combined packaged power semiconductor device: A combined packaged power semiconductor device includes a flipped top source low-side MOSFET electrically connected to a top surface of a die paddle, a first metal interconnection plate connecting between a bottom drain of a high-side MOSFET or a top source of a flipped high-side MOSFET to a bottom drain... Agent:

20110309455 - Gate-last fabrication of quarter-gap mghk fet: A quarter-gap p-type field effect transistor (PFET) formed by gate-last fabrication includes a gate stack formed on a silicon substrate, the gate stack including: a high-k dielectric layer located on the silicon substrate; and a gate metal layer located over the high-k dielectric layer, the gate metal layer including titanium... Agent: International Business Machines Corporation

20110309456 - Semiconductor device: An object is to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. In a transistor including an oxide semiconductor film, the oxide semiconductor film is subjected to dehydration or dehydrogenation performed by heat treatment. In addition, as a gate insulating film in... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110309457 - Method for forming a notched gate insulator for advanced mis semiconductor devices and devices thus obtained: Methods of providing a semiconductor device with a control electrode structure having a controlled overlap between control electrode and first and second main electrode extensions without many spacers are disclosed. A preferred method provides a step of etching back an insulating layer performed after amorphizing and implanting the main electrode... Agent: Interuniversitair Microelektronica Centrum (imec)

20110309458 - A sensor and method for fabricating the same: A sensor and method for fabricating a sensor is disclosed that in one embodiment bonds an etched semiconductor substrate wafer to an etched first device wafer comprising a silicon on insulator wafer which is then bonded to a second device wafer comprising a silicon on insulator wafer to create a... Agent:

20110309459 - Multi-cascaded photodiode: The present disclosure uses at least two cascaded photodetectors. Device area is increased to provide a bigger current than a single photodetector under the same bandwidth. Hence, bandwidth efficiency (BRP) and saturation current-bandwidth product (SCBP) are improved for a high speed, a high responsivity and a high bandwidth with simple... Agent: National Central University

20110309461 - Optical detector and spectrum detector: A photodetector and a spectrum detector, which can be miniaturized and do not require a complicated alignment of an optical axis, are disclosed. A photodetector comprises a substrate and a semiconductor that is formed on the substrate and has a plurality of convex portions. The photodetector detects light transmitted through... Agent: Seoul Opto Device Co., Ltd.

20110309460 - Solid-state imaging device including a multilayer wiring layer, color filters, and lenses, and manufacturing method for the same: The present invention provides a solid-state imaging device comprising: a semiconductor substrate having a pixel region and a peripheral circuit region; a multilayer wiring layer including layers of wiring and an interlayer film interposed therebetween, and disposed above the semiconductor substrate to cover the pixel region and the peripheral circuit... Agent:

20110309462 - Stable, sensitive photodetectors and image sensors made therefrom including circuits, processes, and materials for enhanced imaging performance: In various embodiments, a photodetector includes a semiconductor substrate and a plurality of pixel regions. Each of the plurality of pixel regions comprises an optically sensitive layer over the semiconductor substrate. A pixel circuit is formed for each of the plurality of pixel regions. Each pixel circuit includes a pinned... Agent:

20110309463 - Electrocaloric effect materials and thermal diodes: Examples are generally described that include a substrate, an electrocaloric effect material at least partially supported by the substrate, and a thermal diode at least partially supported by the electrocaloric effect material.... Agent: Empire Technology Development LLC

20110309464 - Semiconductor device including cell region and peripheral region having high breakdown voltage structure: A semiconductor device includes a semiconductor substrate and an electric field terminal part. The semiconductor substrate includes a substrate, a drift layer disposed on a surface of the substrate, and a base layer disposed on a surface of the drift layer. The semiconductor substrate is divided into a cell region... Agent: Denso Corporation

20110309465 - Seal ring structure in semiconductor devices: The present disclosure provides a semiconductor device that includes a substrate having a seal ring region and a circuit region, a plurality of dummy gates disposed over the seal ring region of the substrate, and a seal ring structure disposed over the plurality of dummy gates in the seal ring... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110309466 - Semiconductor device and method for manufacturing the same: The semiconductor device includes a first-conductivity-type region (an N-type well region, for example) and a first second-conductivity-type region (a P-type semiconductor substrate, for example) positioned to cover a lower surface of the first-conductivity-type region, a second second-conductivity-type region (a P-type well region, for example) that is positioned to surround the... Agent: Renesas Electronics Corporation

20110309467 - Semiconductor device and manufacturing method thereof: Disclosed is a semiconductor device including a substrate for bonding (10a), and a semiconductor element part (25aa) which is bonded to the substrate (10a), and in which an element pattern (T) is formed, wherein in a bonded interface between the substrate (10a) and the semiconductor element part (25aa), recessed portions... Agent: Sharp Kabushiki Kaisha

20110309468 - Semiconductor chip package and method of manufacturing the same: A semiconductor chip package includes a substrate, a first layer disposed on the substrate and a second layer substantially similar to and disposed on the first layer. The first layer has a first input/output (I/O) circuit, a first through-via connected to the first input/output (I/O) circuit and a second through-via... Agent: Samsung Electronics Co., Ltd.

20110309469 - Trench mos barrier schottky rectifier with a planar surface using cmp techniques: High Efficiency Diode (HED) rectifiers with improved performance including reduced reverse leakage current, reliable solderability properties, and higher manufacturing yields are fabricated by minimizing topography variation at various stages of fabrication. Variations in the topography are minimized by using a CMP process to planarize the HED rectifier after the field... Agent:

20110309470 - Trench mos barrier schottky rectifier with a planar surface using cmp techniques: High Efficiency Diode (HED) rectifiers with improved performance including reduced reverse leakage current, reliable solderability properties, and higher manufacturing yields are fabricated by minimizing topography variation at various stages of fabrication. Variations in the topography are minimized by using a CMP process to planarize the HED rectifier after the field... Agent:

20110309471 - Transistor structure with a sidewall-defined intrinsic base to extrinsic base link-up region and method of forming the structure: Disclosed are embodiments of an improved transistor structure (e.g., a bipolar transistor (BT) structure or heterojunction bipolar transistor (HBT) structure) and a method of forming the transistor structure. The structure embodiments can incorporate a dielectric layer sandwiched between an intrinsic base layer and a raised extrinsic base layer to reduce... Agent: International Business Machines Corporation

20110309472 - Anti-fuse element: An anti-fuse element that includes first and second electrode films on both of upper and lower surfaces of a dielectric film to form an element body. When an operation voltage is applied to the element body, the first and second electrode films are fused by heat generation by electrification, whereby... Agent: Murata Manufacturing Co., Ltd.

20110309473 - Chip package with die and substrate: A thin film semiconductor die circuit package is provided utilizing low dielectric constant (k) polymer material for the insulating layers of the metal interconnect structure. Five embodiments include utilizing glass, glass-metal composite, and glass/glass sandwiched substrates. The substrates form the base for mounting semiconductor dies and fabricating the thin film... Agent: Megica Corporation

20110309475 - Three-dimensional stacked structure semiconductor device having through-silicon via and signaling method for the semiconductor device: A three-dimensional (3D) semiconductor device including a plurality of stacked layers and a through-silicon via (TSV) electrically connecting the plurality of layers, in which in signal transmission among the plurality of layers, the TSV transmits a signal that swings in a range from an offset voltage that is higher than... Agent: Samsung Electronics Co., Ltd.

20110309474 - Trench capacitor: A trench and method of fabrication is disclosed. The trench shape is cylindrosymmetric, and is created by forming a dopant profile that is monotonically increasing in dopant concentration level as a function of depth into the substrate. A dopant sensitive etch is then performed, resulting in a trench shape providing... Agent: International Business Machines Corporation

20110309476 - Semiconductor device and method of manufacturing the same: In a semiconductor device including a protection diode for preventing electrostatic breakdown employing a low capacitance protection diode, an occupation area of a Zener diode as a voltage limiting element is not needed on a front surface of a semiconductor substrate. A P+ type embedded diffusion layer is formed in... Agent: On Semiconductor Trading, Ltd.

20110309477 - Group iib/va semiconductors suitable for use in photovoltaic devices: The present invention relates to devices, particularly photovoltaic devices, incorporating Group IIB/VA semiconductors such phosphides, arsenides, and/or antimonides of one or more of Zn and/or Cd. In particular, the present invention relates to methodologies, resultant products, and precursors thereof in which electronic performance of the semiconductor material is improved by... Agent:

20110309478 - Semiconductor wafer pre-process annealing and gettering method and system for solar cell formation: Techniques are here disclosed for a solar cell pre-processing method and system for annealing and gettering a solar cell semiconductor wafer having an undesirably high dispersion of transition metals, impurities and other defects. The process forms a surface contaminant layer on the solar cell semiconductor (e.g., silicon) wafer. A surface... Agent: Calisolar, Inc.

20110309479 - Plasma dicing and semiconductor devices formed thereof: In one embodiment, a method of forming a semiconductor device includes forming islands by forming deep trenches within scribe lines of a substrate. The islands have a first notch disposed on sidewalls of the islands. A first electrode stack is formed over a top surface of the islands. The back... Agent:

20110309480 - Process for manufacturing power integrated devices having surface corrugations, and power integrated device having surface corrugations: According to a process for manufacturing an integrated power device, projections and depressions are formed in a semiconductor body that extend in a first direction and are arranged alternated in succession in a second direction, transversely to the first direction. Further provided are a first conduction region and a second... Agent: Stmicroelectronics S.r.i.

20110309482 - Finger sensor including encapsulating layer over sensing area and related methods: A fingerprint sensor may include a substrate, and a finger sensing IC on the substrate and including a finger sensing area on an upper surface thereof for sensing an adjacent finger. The fingerprint sensor may include an encapsulating material on the finger sensing IC and covering the finger sensing area,... Agent: Authentec, Inc.

20110309481 - Integrated circuit packaging system with flip chip mounting and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: fabricating a flip chip integrated circuit die having chip interconnects on an active side; providing a substrate for coupling the flip chip integrated circuit die by the chip interconnects; and applying a conductive underfill directly on the active side... Agent:

20110309483 - Semiconductor device: A semiconductor device that can cope with larger numbers of pins and finer pitches while suppressing lowering of the manufacturing yield and reliability includes: a semiconductor chip having a plurality of electrodes provided on an upper surface thereof; a plurality of lead terminals including inner lead portions disposed toward the... Agent: Rohm Co., Ltd.

20110309485 - Etched surface mount islands in a leadframe package: A method of fabricating a leadframe-based semiconductor package, and a semiconductor package formed thereby, are disclosed. The semiconductor package includes a leadframe and one or more semiconductor die affixed to a die paddle of the leadframe. The leadframe is formed with a plurality of electrical terminals that get surface mounted... Agent:

20110309484 - Lead frame, method of manufacturing the same, and semiconductor package using the same: A semiconductor package includes a lead frame, a first chip, a second chip, a plurality of bonding wires and a mold compound. The lead frame includes a pad portion at a center of the frame and a plurality of lead portions. The pad portion and the plurality of lead portions... Agent: Ambit Microsystems (zhongshan) Ltd.

20110309486 - Method of etching and singulating a cap wafer: A method of forming a capped die forms a cap wafer having a top side and a bottom side. The bottom side is formed with 1) a plurality of device cavities having a first depth, and 2) a plurality of second cavities that each have a greater depth than the... Agent: Analog Devices, Inc.

20110309488 - Semiconductor device and method of forming dam material around periphery of die to reduce warpage: A semiconductor device has a carrier. A first semiconductor die is mounted to the carrier with an active surface of the first semiconductor die oriented toward the carrier. A dam structure is formed on the carrier and around the first semiconductor die by depositing dam material on the carrier with... Agent: Stats Chippac, Ltd.

20110309487 - Semiconductor device, a method of manufacturing the same and an electronic device: The semiconductor device is high in both heat dissipating property and connection reliability in mounting. The semiconductor device includes a semiconductor chip, a resin sealing member for sealing the semiconductor chip, a first conductive member connected to a first electrode formed on a first main surface of the semiconductor chip,... Agent: Renesas Electronics Corporation

20110309489 - Method for forming a doped region in a semiconductor layer of a substrate and use of such method: A method of forming a doped region in a semiconductor layer of a substrate by alloying with doping elements is disclosed. In one aspect, the method includes screen printing a paste layer of doping element paste to the substrate and firing the screen printed paste layer of doping element paste,... Agent: Imec

20110309493 - Electronic device package locking system and method: Device and method for an electronic device package is disclosed. The electronic device package includes a first pad, a second pad and an encapsulation surrounding the first and second pad, wherein the encapsulation includes a first opening underneath the first pad and a second opening underneath the second pad. A... Agent:

20110309492 - Integrated circuit system with recessed through silicon via pads and method of manufacture thereof: A method of manufacture of an integrated circuit system includes: providing a substrate with a face surface having a via therein and a back surface having a trench therein; filling the via with a conductive pillar; forming a recessed contact pad in the trench; filling the recessed contact pad partially... Agent:

20110309499 - Method of manufacturing devices: A method of manufacturing a device includes forming a covering layer having affinity for a filler to be injected into a space between a first base and a second base, on at least one of the opposing surfaces of the first base and the second base, and then injecting the... Agent: Elpida Memory, Inc.

20110309495 - Multi-chip stack package structure: A multi-chip stack package structure comprises a substrate, which has a chip placement area defined on its upper surface and a plurality of contacts disposed outside the chip placement area; a first chip is disposed in the chip placement area with the rear surface, a plurality of first pads being... Agent:

20110309496 - Multi-chip stack package structure: A multi-chip stack package structure comprises a substrate, which has a chip placement area defined on its upper surface and a plurality of contacts disposed outside the chip placement area; a first chip is disposed in the chip placement area with the rear surface, a plurality of first pads being... Agent:

20110309497 - Multi-chip stack package structure: A multi-chip stack package structure comprises a substrate, which has a chip placement area defined on its upper surface and a plurality of contacts disposed outside the chip placement area; a first chip is disposed in the chip placement area with the rear surface, a plurality of first pads being... Agent:

20110309490 - Plasma treatment for semiconductor devices: A semiconductor device having a polymer layer and a method of fabricating the same is provided. A two-step plasma treatment for a surface of the polymer layer includes a first plasma process to roughen the surface of the polymer layer and loosen contaminants, and a second plasma process to make... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110309498 - Semiconductor device: A semiconductor device includes a semiconductor substrate including a bump electrode, a first insulating layer formed on the semiconductor substrate and arranged to a lateral direction of the bump electrode, a first wiring layer formed on the first insulating layer and connected to the bump electrode, a second insulating layer... Agent: Shinko Electric Industries Co., Ltd.

20110309494 - Semiconductor device and fabrication method therefor: Various embodiments of the present invention include a semiconductor device and a fabrication method therefor, the semiconductor device including a first semiconductor chip disposed on a substrate, a first sealing resin sealing the first semiconductor chip, a built-in semiconductor device disposed on the first sealing resin, and a second sealing... Agent:

20110309500 - Semiconductor device and method of self-confinement of conductive bump material during reflow without solder mask: A semiconductor device has a semiconductor die with a die bump pad and substrate with a trace line and integrated bump pad. Conductive bump material is deposited on the substrate bump pad or die bump pad. The semiconductor die is mounted over the substrate so that the bump material is... Agent: Stats Chippac, Ltd.

20110309491 - Tungsten stiffener for flexible substrate assembly: A flexible semiconductor package is formed by interposing a flexible substrate between a tungsten stiffener and a die. A tungsten stiffener is bonded to a first surface of the flexible substrate prior to flip chip bonding or die attach of a die to a second surface of the flexible substrate.... Agent: Aeroflex Colorado Springs Inc.

20110309503 - Semiconductor device and manufacturing method thereof: A semiconductor device comprises a semiconductor chip having a plurality of electrode pads; an insulation layer having one or more apertures which expose at least a part of the plurality of electrode pads respectively on the semiconductor chip; and a plurality of wires which are electrically connected to the exposed... Agent: J-devices Corporation

20110309505 - Semiconductor device and method for fabricating the same: A semiconductor device includes a semiconductor integrated circuit device (1). In the semiconductor integrated circuit device (1), a semiconductor integrated circuit (5) is formed on a center of the surface of a semiconductor substrate (3), and a plurality of electrode terminals (71, 73, . . . ) are provided on... Agent: Panasonic Corporation

20110309502 - Semiconductor device, method for manufacturing semiconductor device, and manufacturing apparatus for semiconductor device: According to one embodiment, a semiconductor device includes a first semiconductor element, a first electrode, a ball part, a second electrode, and a wire. The first electrode is electrically connected to the first semiconductor element. The ball part is provided on the first electrode. The wire connects the ball part... Agent: Kabushiki Kaisha Toshiba

20110309501 - Semiconductor package module and electric circuit assembly with the same: Disclosed herein is a semiconductor package module. The semiconductor package module includes a circuit substrate having an external connection pattern; electronic components mounted on the circuit substrate; a molding structure having a structure surrounding the circuit substrate so as to seal the electronic components from the external environment; and an... Agent: Samsung Electro-mechanics Co., Ltd.

20110309504 - Stack package: A stack package includes a core layer having a first surface and a second surface, and including first circuit wiring lines; a first semiconductor device disposed on the second surface of the core layer; a first resin layer formed on the second surface of the core layer to cover the... Agent: Hynix Semiconductor Inc.

20110309506 - Conductive interconnect structures and formation methods using supercritical fluids: Conductive interconnect structures and formation methods using supercritical fluids are disclosed. A method in accordance with one embodiment of the invention includes forming a via in a substrate, with the via having a width and a length generally transverse to the width, and with a length being approximately 100 microns... Agent: Micron Technology, Inc.

20110309507 - Methodology for evaluation of electrical characteristics of carbon nanotubes: n

20110309510 - Array substrate, display device having the same and method of manufacturing the same: An array substrate includes a switching element, a signal transmission line, a passivation layer and a pixel electrode. The switching element is disposed on an insulating substrate. The signal transmission line is connected to the switching element and includes a barrier layer, a conductive line, and a copper nitride layer.... Agent: Samsung Electronics Co., Ltd.

20110309508 - Method and structure of forming silicide and diffusion barrier layer with direct deposited film on silicon: A semiconductor device or a photovoltaic cell having a contact structure, which includes a silicon (Si) substrate; a metal alloy layer deposited on the silicon substrate; a metal silicide layer and a diffusion layer formed simultaneously from thermal annealing the metal alloy layer; and a metal layer deposited on the... Agent: International Business Machines Corporation

20110309509 - Semiconductor chip with conductive diffusion regions, method for manufacturing the same, and stack package using the same: A semiconductor chip includes a substrate with a barrier region and a conductive diffusion region formed in the substrate and is surrounded by the barrier region. The conductive diffusion region may provide a conductive oath from top of the substrate to bottom of the substrate.... Agent: Hynix Semiconductor Inc.

20110309511 - Method for producing low-k film, semiconductor device, and method for manufacturing the same: Hydrophobicity of a low dielectric constant film comprising a porous silica film is improved by applying a raw material for forming a porous silica film onto a substrate, and performing vapor-phase transport treatment to expose the substrate to an atmosphere of organic amine vapor to which no water is added.... Agent: Elpida Memory, Inc.

20110309512 - Semiconductor device: Embodiments of the invention provide a semiconductor device having high reliability as they ease the thermal stress or a heat distortion or strain occurring during the manufacturing process or during operation, and the embodiments function with stability for a long time. A semiconductor device has a semiconductor substrate, an insulating... Agent: Nissan Motor Co., Ltd.

20110309513 - Buried thermally conductive layers for heat extraction and shielding: An embodiment is a method and apparatus for heat extraction and shielding in single-block semiconductor devices. A thermally insulative layer is deposited on a substrate. The thermally insulative layer is capable of supporting a thermal gradient to reduce heating of the substrate. A buried thermally conductive layer is formed inside... Agent: Palo Alto Research Center Incorporated

20110309514 - Packaged semiconductor device having improved locking properties: The invention relates to a method of manufacturing a semiconductor device (1), the method comprising: i) providing a substrate (10); ii) providing a photoresist layer (15) on the substrate (10), the photoresist layer (15) comprising an opening (16) having pre-shaped sidewalls (18); iii) filling the opening (16) with an electrically... Agent: Nxp B.v.

20110309515 - Semiconductor integrated circuit device and method for designing the same: A semiconductor integrated circuit device includes a semiconductor chip including input/output cells, pads formed on a surface of the semiconductor chip, and interconnects formed on the surface of the semiconductor chip to electrically connect at least some of the plurality of input/output cells and at least some of the plurality... Agent: Panasonic Corporation

20110309521 - Chip stack with conductive column through electrically insulated semiconductor region: A method for stacking and interconnecting integrated circuits includes providing at least two substrates; forming a trench in each substrate; filling the trench with an insulating material; forming, in each substrate, at least one conductive area; thinning each substrate until reaching at least the bottom of the trench, to obtain... Agent: Stmicroelectronics (rousset) Sas

20110309523 - Pop precursor with interposer for top package bond pad pitch compensation: An electronic assembly adapted for forming package on package (PoP) devices includes a package substrate having a molded IC die thereon that defines a mold cap height and substrate contact pads lateral to the molded IC die. An interposer including an interposer substrate has bottom metal land pads and top... Agent: Texas Instruments Incorporated

20110309520 - Semiconductor device and manufacturing method of the device: A semiconductor device includes a semiconductor substrate including a first surface and a second surface opposite to the first surface, and a through-via penetrating the semiconductor substrate. The through-via has a stacked structure of a first conductive film formed in a portion of the semiconductor substrate closer to the first... Agent: Panasonic Corporation

20110309524 - Semiconductor device and method of forming metal line of semiconductor device: A semiconductor device and a method of forming a metal line of a semiconductor device includes a first insulating layer formed over a semiconductor substrate an etch-stop layer formed over the first insulating layer, contact holes formed by etching the etch-stop layer and the first insulating layer, Contact plugs formed... Agent: Hynix Semiconductor Inc.

20110309517 - Semiconductor device and method of manufacturing the same: In one embodiment, a semiconductor device including a substrate provided with a semiconductor element, and first and second interconnects provided above the substrate, each of the first and second interconnects having a line shape in a plan view, and the first and second interconnects being substantially parallel to each other.... Agent: Kabushiki Kaisha Toshiba

20110309518 - Semiconductor device with configurable through-silicon vias: Disclosed is a semiconductor device that comprises a plurality of through-silicon vias (TSVs), a signal line and a selective connector for causing the signal line to be either electrically connected to one of the TSVs or electrically isolated from all of the TSVs, based on a control signal.... Agent:

20110309519 - Semiconductor device with through-silicon vias: Disclosed is a semiconductor device with through-silicon vias (TSVs) that comprises a primary TSV group, a plurality of signal lines connected to the primary TSV group, a redundant TSV group and connection circuitry responsive to a control signal having a predetermined value to electrically connect the signal lines to the... Agent:

20110309522 - Semiconductor integrated circuit device comprising different level interconnection layers connected by conductor layers including conductor layer for redundancy: s

20110309516 - Semiconductor package and method for making the same: The present invention relates to a semiconductor package and a method for making the same. The semiconductor package includes a first chip and a second chip. The first chip comprises a first active surface, at least one first non-top metal layer and a plurality of first signal coupling pads. The... Agent:

20110309525 - Multi-chip package semiconductor memory device: An MCP type semiconductor memory device having a structure in which a stack memory chip including a plurality of stacked memory chips and a memory controller chip are juxtaposed on a substrate is provided, which achieves a reduction in package size. The semiconductor memory device includes a stack memory chip... Agent: Oki Semiconductor Co., Ltd.

20110309526 - Printed circuit board and semiconductor package including the same: A semiconductor package may include a base substrate, a solder resist layer on the base substrate, a first semiconductor chip mounted on the base substrate, and a second semiconductor chip stacked on the first semiconductor chip. The second semiconductor chip may include at least one end portion protruding from the... Agent: Samsung Electronics Co., Ltd.

20110309528 - Electronic modules and methods for forming the same: Electronic modules are formed by encapsulating microelectronic dies within cavities in a substrate.... Agent:

20110309527 - Insulating member, metal base substrate, and semiconductor module, and manufacturing methods thereof: An insulating member of the invention can include an epoxy resin, a first inorganic filler diffused in the epoxy resin and having an average particle diameter of 1 to 99 nm, and a second inorganic filler diffused in the epoxy resin and having an average particle diameter of 0.1 to... Agent: Fuji Electric Co., Ltd.

20110309529 - Module substrate that allows replacement of faulty chips, semiconductor module having the same, and method for manufacturing the semiconductor module: A module substrate may include a substrate body on which a plurality of chip mounting regions having connection pads are defined. Repair structures may be respectively formed, or placed, in the chip mounting regions. Each repair structure includes conductive layer patterns formed over the connection pads in each chip mounting... Agent: Hynix Semiconductor Inc.

20110309530 - Integrated circuit packaging system with leadframe and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: forming a paddle having an indented planar surface intersecting an outwardly extending planar surface at an angle of approximately 135 degrees plus 25 degrees or minus 5 degrees; mounting an integrated circuit over the paddle; and forming an encapsulation... Agent:

20110309531 - Molded beam for optoelectronic sensor chip substrate: A substrate on which a plurality of epoxy over molded integrated circuit dies are formed includes a beam formed on the substrate for providing stiffness to the substrate. The beam includes structure having a cross-sectional shape, for example, substantially in the shape of a trapezoid, “T” or “L”, and may... Agent: Texas Advanced Optoelectronic Solutions, Inc.

20110309532 - Semiconductor structure with alignment control mask: A semiconductor structure includes a semiconductor substrate, formed on which are a first layer and a second layer, and an alignment-control mask. The alignment-control mask includes a first direction reference element, formed in a first region of the first layer and extending in a first alignment direction, and first position... Agent: Stmicroelectronics S.r.l.

20110303887 - Memory storage device and method of manufacturing the same: A memory storage device includes: a lower electrode formed to be separated for each of memory cells; a memory storage layer formed on the lower electrode and capable of recording information according to a change in resistance; and an upper electrode formed on the memory storage layer, wherein the memory... Agent: Sony Corporation

20110303888 - Nonvolatile memory device: According to one embodiment, a nonvolatile memory device includes a memory cell connected to a first interconnect and a second interconnect. The memory cell includes a plurality of layers. The plurality of layers includes a carbon-containing memory layer sandwiched between a first electrode film and a second electrode film and... Agent: Kabushiki Kaisha Toshiba

20110303889 - Variable resistance memory device having reduced bottom contact area and method of forming the same: A variable resistance memory element and method of forming the same. The memory element includes a substrate supporting a bottom electrode having a small bottom contact area. A variable resistance material is formed over the bottom electrodes such that the variable resistance material has a surface that is in electrical... Agent:

20110303890 - Electrically actuated device: An electrically actuated device includes a first electrode and a second electrode crossing the first electrode at a non-zero angle, thereby forming a junction therebetween. A material is established on the first electrode and at the junction. At least a portion of the material is a matrix region. A current... Agent:

20110303896 - Broadband light emitting device lamps for providing white light output: A light emitting device (LED) includes a broadband LED chip having a multi-quantum well active region including alternating active and barrier layers. The active layers respectively include different thicknesses and/or different relative concentrations of at least two elements of a semiconductor compound, and are respectively configured to emit light of... Agent: Cree, Inc.

20110303893 - Electrically pixelated luminescent device incorporating optical elements: Electrically pixelated luminescent devices incorporating optical elements, methods for forming electrically pixelated luminescent devices incorporating optical elements, and systems including electrically pixelated luminescent devices incorporating optical elements.... Agent:

20110303892 - Light-emitting device and projector: A light-emitting device includes a first layer, a second layer, and a semiconductor body interposed between the first and second layers, wherein the semiconductor body has a first fine-wall-shape member, a second fine-wall-shape member, and a semiconductor member interposed between the first and second fine-wall-shape members, the first and second... Agent: Seiko Epson Corporation

20110303891 - Mixed alloy defect redirection region and devices including same: An optical semiconductor device such as a light emitting diode is formed on a transparent substrate having formed thereon a template layer, such as AlN, which is transparent to the wavelength of emission of the optical device. A mixed alloy defect redirection region is provided over the template layer such... Agent: Palo Alto Research Center Incorporated

20110303894 - Semiconductor light emitting element and fabricating method: A method of forming a semiconductor light emitting element. The method can include forming a seed layer on a semiconductor layer assembly including at least one nitride semiconductor layer. An insulating mask can be formed on the seed layer. The insulating mask can include a plurality of element areas separated... Agent: Nichia Corporation

20110303895 - Vertical light-emitting diode: A vertical light-emitting diode with a short circuit protection function includes a heat dissipation substrate, a second electrode, a welding metal layer and a third electrode; a semiconductor light-emitting layer formed on the third electrode; a barrier for the semiconductor light-emitting layer with an isolation trench, so that the barrier... Agent: Xiamen Sanan Optoelectronics Technology Co., Ltd.

20110303897 - Materials, systems and methods for optoelectronic devices: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically... Agent: Invisage Technologies, Inc.

20110303898 - Materials, systems and methods for optoelectronic devices: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically... Agent: Invisage Technologies, Inc.

20110303899 - Graphene deposition: Embodiments of the invention are directed toward the deposition of Graphene on a semiconductor substrate. In some embodiments, these processes can occur at low temperature levels during a back end of the line process. For example, Graphene can be deposited in a CVD reactor at a processing temperature that is... Agent: Applied Materials, Inc.

20110303901 - 6h-indolo[2,3-b]quinoxaline derivatives and organic light emitting diode using the same: A 6H-indolo[2,3-b]quinoxaline derivative has a structure of formula (I). R9 is a member selected from the group consisted of an aryl group having one or more substituents and a heteroaryl group having one or more substituents, and R1 to R8 are substituents. The 6H-indolo[2,3-b]quinoxaline derivative of the present invention incorporates... Agent:

20110303910 - Field effect transistor: A heterocyclic compound represented by formula (1) and a field effect transistor having a semiconductor layer comprising the compound. (In the formula, X1 and X2 each independently represents a sulfur atom or a selenium atom, and R1 and R2 each independently represents a C5-16 alkyl.)... Agent: Hiroshima University

20110303900 - Lighting emitting diode device with directivity and coherency and manufaturing method for providing light with directivity and coherency: The present invention discloses a lighting emitting diode device with directivity and coherency and a manufacturing method for providing a light with directivity and coherency. The light emitting diode device comprises a substrate, a light emitting diode module and a masking layer. The light emitting diode module is disposed on... Agent: National Tsing Hua University

20110303911 - Method for forming pattern, method for manufacturing light emitting device, and light emitting device: Oxidation treatment is performed to the surface of a substrate provided with a photocatalytic conductive film and an insulating film; treatment with a silane coupling agent is performed, so that a silane coupling agent film is formed and the surface of the substrate is modified to be liquid-repellent; and the... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110303903 - Organic electroluminescence element and display device: A red light emitting organic electroluminescence device (11) has a structure in which an organic layer (14) including a light emitting layer (14c) is sandwiched between an anode (13) and a cathode (15). In the organic electroluminescence device (11), the light emitting layer (14c) contains, as a host material, a... Agent: Sony Corporation

20110303907 - Organic electroluminescent element material and organic electroluminescent element comprising same: A material for organic electroluminescent devices including a 2,7-disubstituted naphthalene ring in its molecule and an organic electroluminescent device including an organic thin film layer having one or more layers between a cathode and an anode. An organic electroluminescence device having the organic thin film layer which includes the material... Agent: Idemitsu Kosan Co., Ltd.

20110303905 - Organic light-emitting diode having optical resonator in addition to production method: The invention relates to an organic light-emitting diode, known under the abbreviation OLED, and to a method for the production of such an organic light-emitting diode. According to the invention, an OLED or organic light-emitting diode having an emitter layer (5) is produced, said emitter layer emitting white light in... Agent:

20110303902 - Organic light-emitting diode with high color rendering: An organic light-emitting diode with high color rendering is provided, which includes: a substrate; a first electrode disposed over the substrate; a light-emitting region disposed over the first electrode, in which the light-emitting region includes a plurality of light-emitting layers and at least one spacer, the spacer being disposed between... Agent:

20110303904 - Photovoltaic device and method of making same: A photovoltaic device and method of manufacturing is disclosed. In one embodiment, the device includes a silicon layer and first and second organic layers. The silicon layer has a first face and a second face. First and second electrodes electrically are coupled to the first and second organic layers. A... Agent:

20110303909 - Planar conjugated compounds and their applications for organic electronics: where Qu is independently a substituted or unsubstituted, substantially planar 5 to 8 membered conjugated ring, and Ar1 and Ar2 each independently is a substituted or unsubstituted, substantially planar conjugated aromatic structure having from 5 to 50 carbon atoms. The compounds of formula may generally form an H-shaped molecular structure.... Agent: Agency For Science, Technology And Research

20110303908 - Polymer, organic photoelectric device, and display including the same: A polymer, an organic photoelectric device, and a display device, the polymer including a repeating unit represented by the following Chemical Formula 1:... Agent:

20110303906 - Transparent organic light emitting diode: The invention relates to a transparent organic light emitting diode (OLED) (1), comprising: a substrate material (2) with a top face (2a) and a bottom face (2b), whereas at least on the top face (2a) is arranged at least one OLED-layer system with a first electrode layer (3), a second... Agent: Koninklijke Philips Electronics N.v.

20110303912 - Methods of manufacturing p-type zn oxide nanowires and electronic devices including p-type zn oxide nanowires: Example embodiments relate to methods of manufacturing p-type Zn oxide nanowires and electronic devices including the p-type Zn oxide nanowires. The method may include forming Zn oxide nanowires in an aqueous solution by using a hydrothermal synthesis method and annealing the Zn oxide nanowires to form p-type Zn oxide nanowires.... Agent: Samsung Electronics Co., Ltd.

20110303914 - Semiconductor device: One object is to provide a semiconductor device including an oxide semiconductor with improved electrical characteristics. The semiconductor device includes a first insulating film including an element of Group 13 and oxygen; an oxide semiconductor film partly in contact with the first insulating film; a source electrode and a drain... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110303913 - Semiconductor device and method for manufacturing the same: An object of an embodiment of the present invention is to manufacture a highly-reliable semiconductor device comprising a transistor including an oxide semiconductor, in which change of electrical characteristics is small. In the transistor including an oxide semiconductor, oxygen-excess silicon oxide (SiOX (X>2)) is used for a base insulating layer... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110303915 - Compressively stressed fet device structures: Methods for fabricating FET device structures are disclosed. The methods include receiving a fin of a Si based material, and converting a region of the fin into an oxide element. The oxide element exerts pressure onto the fin where a Fin-FET device is fabricated. The exerted pressure induces compressive stress... Agent: International Business Machines Corporation

20110303916 - Semiconductor device: A semiconductor device of the present invention includes: a lower electrode (110); a contact layer (130) including a first contact layer (132), a second contact layer (134) and a third contact layer (136) overlapping with a semiconductor layer (120); and an upper electrode (140) including a first upper electrode (142),... Agent: Sharp Kabushiki Kaisha

20110303919 - Display device and electronic device having the display device, and method for manufacturing thereof: To provide a display device including a thin film transistor in which high electric characteristics and reduction in off-current can be achieved. The display device having a thin film transistor includes a substrate, a gate electrode provided over the substrate, a gate insulating film provided over the gate electrode, a... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110303918 - Organic light-emitting display and method of manufacturing the same: An organic light-emitting display and a method of manufacturing the display are disclosed. In one embodiment, the organic light-emitting display includes a thin film transistor comprising: i) a gate electrode, ii) an active layer electrically insulated from the gate electrode, iii) a source electrode and a drain electrode electrically insulated... Agent: Samsung Mobile Display Co., Ltd.

20110303920 - Thin film transistor having a copper signal line and method of manufacturing the same: An array substrate for a liquid crystal display device includes a substrate, a thin film transistor having a signal line of dual layered structure of a copper compound and copper, and a pixel electrode connected to the thin film transistor.... Agent:

20110303917 - Thin film transistor substrate, method of fabricating the same and flat display having the same: A thin film transistor substrate and a method for fabricating the same are disclosed. A thin film transistor substrate includes a substrate comprising a plurality of grooves having different depths, respectively, to have a multi-step structure; gate and data lines alternatively crossed in the grooves to form a plurality of... Agent:

20110303921 - Display device and method for manufacturing the same: A display device includes a substrate, a first conductive film pattern including a gate electrode and a first capacitor electrode on the substrate, a gate insulating layer pattern on the first conductive film pattern, a polycrystalline silicon film pattern including an active layer and a second capacitor electrode on the... Agent:

20110303922 - Display device and method for manufacturing the same: A display device and a manufacturing method thereof are provided. The display device includes a substrate, a semiconductor layer formed on the substrate, an organic insulating layer formed on the semiconductor layer, a plurality of conductive wires formed on the organic insulating layer. The organic insulating layer has an open... Agent: Samsung Mobile Display Co., Ltd.

20110303923 - Tft, array substrate for display apparatus including tft, and methods of manufacturing tft and array substrate: A thin film transistor (TFT), an array substrate including the TFT, and methods of manufacturing the TFT and the array substrate. The TFT includes an active layer, and a metal member that corresponds to a portion of each of the source region and the drain region of the active layer,... Agent: Samsung Mobile Display Co., Ltd.

20110303924 - Light-emitting device and projector: A light-emitting device includes a first layer, a second layer, and a semiconductor body interposed between the first and second layers, wherein the semiconductor body has a first fine-wall-shape member, a second fine-wall-shape member, and a semiconductor member interposed between the first and second fine-wall-shape members, the first and second... Agent: Seiko Epson Corporation

20110303925 - Semiconductor device and the method of manufacturing the same: l

20110303928 - Led lamp: An LED lamp A includes a plurality of LED modules 2 each including an LED chip 21, and a support member 1 including a support surface 1a on which the LED modules 2 are mounted. The LED modules 2 include a plurality of kinds of LED modules, or a first... Agent: Rohm Co., Ltd.

20110303926 - Light emitting diode systems including optical display systems having a microdisplay: Light emitting diode systems are disclosed.... Agent: Luminus Devices, Inc.

20110303927 - Light emitting module and illumination apparatus: A light emitting module (1) comprises a module substrate (2), a light emitting diode string (31), and a sealing member (48). The light emitting diode string (31) includes light emitting diode elements (32) and bonding wires (37) which connect the light emitting diode elements (32). The light emitting diode element... Agent: Toshiba Lighting & Technology Corporation

20110303929 - Multi-dimensional led array system and associated methods and structures: A formed, multi-dimensional light-emitting diode (LED) array is disclosed. A substrate is bent into a trapezoidal shape having different sections facing in different directions. Each section has one or more mounted LEDs that emit light with an azimuthally non-circular, monotonic angular distribution. A converter material is placed in an optical... Agent: Micron Technology, Inc.

20110303930 - Organic light emitting diode display: An organic light emitting diode (OLED) display is disclosed. The organic light emitting diode (OLED) display includes an organic light emitter that has a first electrode, an organic emission layer, and a second electrode. The OLED also has an encapsulation substrate covering the organic light emitter and an assistance electrode... Agent: Samsung Mobile Display Co., Ltd.

20110303933 - Diode having vertical structure and method of manufacturing the same: A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode.... Agent:

20110303932 - Organic, radiation-emitting component and method for producing the same: A method for producing an organic, radiation-emitting component is specified, wherein at least one layer (10) containing an emitter material is produced in a radiation-emitting region (4) of the component, wherein the layer (10) is produced by means of atomic layer deposition and has a thickness of at most 2... Agent: Orsam Opto Semiconductors Gmbh

20110303931 - Semiconductor light emitting diode and method for fabricating the same: Disclosed are a semiconductor light emitting diode and a method for fabricating the same. The method comprises forming a crystalline nitride semiconductor layer on a substrate, forming an amorphous layer and a crystalline nitride semiconductor layer on the nitride semiconductor layer, forming an n-type nitride semiconductor layer on the crystalline... Agent:

20110303938 - Group iii nitride semiconductor light-emitting element: A group III nitride semiconductor light-emitting element having improved light extraction efficiency is provided. The light-emitting element has a plurality of dot-like grooves formed on a surface at the side joining to a p-electrode of a p-type layer. The groove has a depth reaching an n-type layer. Side surface of... Agent: Toyoda Gosei Co., Ltd.

20110303942 - Led structure: A light emitting device, a wafer for making the same, and method for fabricating the same are disclosed. The device and wafer include a first layer of a first conductivity type, an active layer, and a layer of a second conductivity type. The active layer overlies the first layer, the... Agent:

20110303934 - Light emitting device: Disclosed is a light emitting device. The light emitting device comprises a reflective layer comprising an alloy of at least one of an Ag-based alloy, an Al-based alloy, Ag, Al, Rh, or Sn, and at least one of Pd, Cu, C, Sn, In or Cr, and a light emitting semiconductor... Agent: Lg Innotek Co. Ltd

20110303941 - Light emitting device and lighting system: Provided are a light emitting device and a lighting system having the same. The light emitting device includes: a plurality of metal layers spaced to each other; a first insulation film disposed on an outer part of a top surface area of the plurality of metal layers and having an... Agent: Lg Innotek Co., Ltd.

20110303936 - Light emitting device package structure and fabricating method thereof: A light emitting device package structure is described. The light emitting device package structure includes a carrier substrate with a top surface and a bottom surface, having at least two through holes. A dielectric mirror structure is formed on the top surface of the carrier substrate, wherein the dielectric mirror... Agent:

20110303940 - Light emitting device package using quantum dot, illumination apparatus and display apparatus: There is provided a light emitting device package using a quantum dot, an illumination apparatus and a display apparatus. The light emitting device package includes a light emitting device; a sealing part disposed in a path of light emitted from the light emitting device and having a lens shape; and... Agent:

20110303937 - Light emitting diode and manufacturing method thereof: A light emitting diode includes a heat conductive substrate and a light emitting structure formed on the substrate. A transparent conductive layer is formed on the light emitting structure and an electrode pad is deposited on the transparent conductive layer. The light emitting diode further comprises a metal layer and... Agent: Hon Hai Precision Industry Co., Ltd.

20110303935 - Light source module with luminescence in lens: The disclosure relates to a light source module comprising a substrate having circuits, at least one light emitting diode (LED) die positioned on the substrate, and at least one luminescence containing lens over the LED die with a light-converting portion having an inverted truncated pyramid-shaped structure with a spherical top.... Agent: Foxsemicon Integrated Technology, Inc.

20110303939 - Wire-piercing light-emitting diode lamps: A wire-piercing light-emitting diode (LED) a lead frame having a first lead and a second lead. The first lead has a first transition portion and a first bottom portion with a first cutting member, and the second lead having a second transition portion and a second bottom portion with a... Agent:

20110303944 - Housing for an optoelectronic component: A housing (1) for an optoelectronic component is indicated. The housing (1) comprises a housing body (2) and first and second electrical terminal strips (11, 12), which extend in part inside the housing body (2) and are guided out of the housing body (2) at a first side face (4a).... Agent: Osram Opto Semiconductors Gmbh

20110303943 - Organic light-emitting display apparatus and method of manufacturing the same: An Organic light-emitting display apparatus capable of preventing permeation of external impurities such as oxygen or water vapor and enhancing impact resistance, and a method of manufacturing the organic light-emitting display apparatus. The organic light-emitting display apparatus includes a first substrate; a display unit disposed on the first substrate; a... Agent: Samsung Mobile Display Co., Ltd.

20110303945 - Semiconductor arrangement and method of producing a semiconductor arrangement: A semiconductor arrangement including at least one lead arrangement with a top and a bottom opposite the top; a least one solder resist layer which partially covers the top and the bottom, at least sub-zones of the top and the bottom, which are not covered by the solder resist layer,... Agent: Osram Opto Semiconductors Gmbh

20110303946 - Thermal storage system using encapsulated phase change materials in led lamps: A phase change material (PCM) is used as thermal storage for lighting systems. The PCM is placed in a thermally conductive container in close contact with the lighting system. As the PCM absorbs heat, it changes from a solid to a liquid state, but the temperature of the PCM is... Agent: Lumenetix, Inc.

20110303947 - Apparatus and method for protecting electronic circuits: Apparatuses and methods for electronic circuit protection are disclosed. In one embodiment, an apparatus comprises a well having an emitter and a collector region. The well has a doping of a first type, and the emitter and collector regions have a doping of a second type. The emitter region, well,... Agent: Analog Devices, Inc.

20110303948 - Esd and emc optimized hv-mos transistor: Devices and circuits related to Electrostatic discharge (ESD) and Electromagnetic compatibility (EMC) are herein described. An ESD protection device is incorporated into a transistor in order to protect the gate of the transistor from excessive current loads related to ESD or EMC events. In an implementation, a device includes a... Agent: Infineon Technologies Ag

20110303949 - Semiconductor light-receiving element: A semiconductor light-detecting element includes: a semiconductor substrate of a first conductivity type; a light absorption recoupling layer of the first conductivity type, a multilayer reflection film of the first conductivity type, a light absorbing layer, and a window layer, which are laminated, in that order, on the semiconductor substrate;... Agent: Mitsubishi Electric Corporation

20110303950 - Fabrication of a vertical heterojunction tunnel-fet: Exemplary embodiments include a method for fabricating a heterojunction tunnel field-effect-transistor (FET), the method including forming a gate region on a silicon layer of a silicon-on-insulator (SOI) substrate, forming a drain region on the silicon layer adjacent the gate region and forming a vertical heterojunction source region adjacent the gate... Agent: International Business Machines Corporation

20110303951 - Semiconductor device and method of fabricating the same: The present application discloses a semiconductor device and a method for manufacturing the same. The semiconductor device comprises a semiconductor substrate; a first semiconductor layer on the semiconductor substrate; a second semiconductor layer surrounding the first semiconductor layer; a high k dielectric layer and a gate conductor formed on the... Agent: Insititute Of Microelectronics, Chinese Academy Of Sciences

20110303952 - High electron mobility transistors and methods of fabricating the same: A High electron mobility transistor (HEMT) includes a source electrode, a gate electrode, a drain electrode, a channel forming layer in which a two-dimensional electron gas (2DEG) channel is induced, and a channel supplying layer for inducing the 2DEG channel in the channel forming layer. The source electrode and the... Agent: Samsung Electronics Co., Ltd.

20110303953 - Gas sensor and method for manufacturing the gas sensor: It is an object to provide a gas sensor which is formed by a simple manufacturing process. Another object is to provide a gas sensor whose manufacturing cost is reduced. A transistor which includes an oxide semiconductor layer in contact with a gas and which serves as a detector element... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110303954 - Semiconductor devices having stressor regions and related fabrication methods: Apparatus for semiconductor device structures and related fabrication methods are provided. One method for fabricating a semiconductor device structure involves forming a gate structure overlying a region of semiconductor material, wherein the width of the gate structure is aligned with a <100> crystal direction of the semiconductor material. The method... Agent: Globalfoundries Inc.

20110303955 - Junction field effect transistor having a double gate structure and method of making same: A junction field effect transistor includes a channel region, a gate region coupled to the channel region, a well tap region coupled to the gate region and the channel region, and a well region coupled to the well tap region and the channel region. A double gate operation is achieved... Agent: Suvolta, Inc.

20110303956 - Image sensors having light shield patterns between an optical black region and an active pixel region: An image sensor having a light receiving region and an optical black region includes a semiconductor substrate, an interconnection disposed on the semiconductor substrate and extending along an interface between the light receiving region and the optical black region, and via plugs disposed between the interconnection and the semiconductor substrate... Agent: Samsung Electronics Co., Ltd.

20110303957 - Concentric or nested container capacitor structure for integrated circuits: Disclosed are embodiments for a container capacitor structure in which at least two container capacitors, e.g., an inner and outer container capacitor, are made concentric and nested with respect to one another. The nested capacitors are formed in one embodiment by defining a hole in a dielectric layer for the... Agent: Micron Technology, Inc.

20110303958 - Nonvolatile semiconductor memory: According to one embodiment, a nonvolatile semiconductor memory includes control gates provided in an array form, the control gates passing through the first semiconductor layer, data recording layers between the first semiconductor layer and the control gates, two first conductive-type diffusion layers at two ends in the first direction of... Agent:

20110303960 - Low resistivity tungsten pvd with enhanced ionization and rf power coupling: Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. The gate electrode stack includes a conductive film layer... Agent: Applied Materials, Inc.

20110303959 - Ultraviolet energy shield for non-volatile charge storage memory: An integrated circuit with non-volatile memory cells shielded from ultraviolet light by a shielding structure compatible with chemical-mechanical processing. The disclosed shielding structure includes a roof structure with sides; along each side are spaced-apart contact posts, each with a width on the order of the wavelength of ultraviolet light to... Agent: Texas Instruments Incorporated

20110303962 - Non-volatile memory devices with non-uniform floating gate coupling: A memory device includes a substrate having an active region defined therein that extends linearly along a first direction. The device also includes a select line on the substrate and extending along a second direction to perpendicularly cross the active region, first and second floating gate patterns on the active... Agent: Samsung Electronics Co., Ltd.

20110303961 - Nonvolatile memory device and method of manufacturing same: A nonvolatile memory device including a cell array area in which a plurality of unit cells are arranged at least in one direction includes a plurality of memory transistors formed in the respective unit cells. Each memory transistor includes a gate pattern in which a tunnel insulating layer, a floating... Agent: Samsung Electronics Co., Ltd.

20110303963 - Semiconductor devices: A method of forming a semiconductor device includes forming line patterns on a substrate, the line patterns defining narrow and wide gap regions, forming spacer patterns in the narrow and wide gap regions on sidewalls of the line patterns, spacer patterns in the wide gap regions exposing an upper surface... Agent: Samsung Electronics Co., Ltd.

20110303964 - Nonvolatile memory, method for manufacturing same, and display device: Provided is a nonvolatile memory 10 having a selective gate SG formed below a silicon layer 14, which is to be a channel region formed between a source region S and a drain region D of a transistor, through a gate insulating film 15 between the silicon layer and the... Agent: Sharp Kabushiki Kaisha

20110303967 - Non-volatile memory with air gaps: Air gap isolation in non-volatile memory arrays and related fabrication processes are provided. Electrical isolation can be provided, at least in part, by bit line air gaps that are elongated in a column direction and/or word line air gaps that are elongated in a row direction. The bit line air... Agent:

20110303966 - Nonvolatile semiconductor memory transistor, nonvolatile semiconductor memory, and method for manufacturing nonvolatile semiconductor memory: A nonvolatile semiconductor memory transistor included in a nonvolatile semiconductor memory includes an island-shaped semiconductor having a source region, a channel region, and a drain region formed in this order from the substrate side, a hollow pillar-shaped floating gate arranged so as to surround the outer periphery of the channel... Agent:

20110303965 - Semiconductor devices: A semiconductor device and method of manufacturing a semiconductor device include a plurality of first active regions and a second active region being formed on a substrate. The second active region is formed between two of the first active regions. A plurality of gate structures is formed on respective first... Agent: Samsung Electronics Co., Ltd.

20110303968 - Nonvolatile memory array with continuous charge storage dielectric stack: An integrated circuit of an array of nonvolatile memory cells has a dielectric stack layer over the substrate, and implanted regions in the substrate under the dielectric stack layer. The dielectric stack layer is continuous over a planar region, that includes locations of the dielectric stack layer that store nonvolatile... Agent: Macronix International Co., Ltd.

20110303969 - Semiconductor memory device and method of manufacturing the same: According to one embodiment, a semiconductor memory device with memory cells each composed of a vertical transistor, comprises a silicon layer formed into a columnar shape on a silicon substrate, a gate insulating film part in which a tunnel insulating film, a charge storage layer, and a block insulating film... Agent:

20110303971 - Three-dimensional semiconductor memory device and method for manufacturing the same: A method for manufacturing a three-dimensional semiconductor memory includes forming a plurality of stacked structures disposed on a substrate to be spaced apart from each other, each of the stacked structures including a plurality of dielectric patterns and a plurality of polysilicon patterns alternately stacked, forming a metal layer to... Agent:

20110303970 - Vertical semiconductor devices: A vertical semiconductor device and a method of making a vertical semiconductor device include a first semiconductor pattern formed on a substrate and a first gate structure formed on a sidewall of the first semiconductor pattern. A second semiconductor pattern is formed on the first semiconductor pattern. A plurality of... Agent: Samsung Electronics Co., Ltd.

20110303974 - Integrated circuit devices including vertical channel transistors with shield lines interposed between bit lines and methods of fabricating the same: An integrated circuit device includes a plurality of pillars protruding from a substrate in a first direction. Each of the pillars includes source/drain regions in opposite ends thereof and a channel region extending between the source/drain regions. A plurality of conductive bit lines extends on the substrate adjacent the pillars... Agent: Samsung Electronics Co., Ltd.

20110303972 - Semiconductor device and method for manufacturing the same: A semiconductor device manufacturing method of an embodiment includes the steps of: forming a first insulating layer on a semiconductor substrate; forming on the first insulating layer an amorphous or polycrystalline semiconductor layer having a narrow portion; forming on the semiconductor layer a second insulating layer having a thermal expansion... Agent:

20110303973 - Semiconductor device and production method: The semiconductor device according to the present invention is an nMOS SGT and is composed of a first n+ type silicon layer, a first gate electrode containing metal and a second n+ type silicon layer arranged on the surface of a first columnar silicon layer positioned vertically on a first... Agent:

20110303975 - Field effect transistor with self-aligned source and heavy body regions: A field effect transistor includes a plurality of trenches extending into a semiconductor region of a first conductivity type. The plurality of trenches includes a plurality of gated trenches and a plurality of non-gated trenches. A body region of a second conductivity extends in the semiconductor region between adjacent trenches.... Agent:

20110303976 - High voltage channel diode: A channel diode structure having a drift region and method of forming. A charge balanced channel diode structure having an electrode shield and method of forming.... Agent: Texas Instruments Incorporated

20110303977 - Ldpmos structure for enhancing breakdown voltage and specific on resistance in bicmos-dmos process: An LDPMOS structure having enhanced breakdown voltage and specific on-resistance is described, as is a method for fabricating the structure. A P-field implanted layer formed in a drift region of the structure and surrounding a lightly doped drain region effectively increases breakdown voltage while maintaining a relatively low specific on-resistance.... Agent: Macronix International Co.,ltd.

20110303979 - Semiconductor device: According to one embodiment, a semiconductor device, includes a semiconductor layer, a first base region of a first conductivity type, a first source region of a second conductivity type, a second base region of the first conductivity type, a back gate region of the first conductivity type, a drift region... Agent: Kabushiki Kaisha Toshiba

20110303978 - Semiconductor device having an enhanced well region: An apparatus is disclosed to increase a breakdown voltage of a semiconductor device. The semiconductor device includes an enhanced well region to effectively increase a voltage at which punch-through occurs when compared to a conventional semiconductor device. The enhanced well region includes a greater number of excess carriers when compared... Agent: Broadcom Corporation

20110303980 - Semiconductor devices having stressor regions and related fabrication methods: Apparatus for semiconductor device structures and related fabrication methods are provided. A method for fabricating a semiconductor device structure on an isolated region of semiconductor material comprises forming a plurality of gate structures overlying the isolated region of semiconductor material and masking edge portions of the isolated region of semiconductor... Agent: Globalfoundries Inc.

20110303981 - Scheme to enable robust integration of band edge devices and alternatives channels: A method of forming a semiconductor device includes forming a buried oxide (BOX) layer on a semiconductor substrate, forming a silicon-on-insulator (SOI) layer on the BOX layer, depositing a hard mask including one of silicon, a nitride, and a metal oxide on the SOI layer, removing the hard mask from... Agent: International Business Machines Corporation

20110303982 - Resistive device for high-k metal gate technology and method of making the same: A semiconductor device is provided which includes a semiconductor substrate, an isolation structure formed in the substrate for isolating an active region of the substrate, the isolation structure being formed of a first material, an active device formed in the active region of the substrate, the active device having a... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110303983 - Finfet devices and methods of manufacture: A finFET structure and method of manufacture such structure is provided with lowered Ceff and enhanced stress. The finFET structure includes a plurality of finFET structures and a stress material forming part of a gate stack and in a space between adjacent ones of the plurality of finFET structures.... Agent: International Business Machines Corporation

20110303984 - Quadrangle mos transistors: A quadrangle transistor unit includes four transistor units. Each of the four transistor units includes a gate electrode. The gate electrodes of the four transistor units are aligned to four sides of a square. At least two of the four transistor units are connected in parallel.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110303985 - Semiconductor device and fabrication method therefor: The semiconductor device includes: a columnar silicon layer on the planar silicon layer; a first n+ type silicon layer formed in a bottom area of the columnar silicon layer; a second n+ type silicon layer formed in an upper region of the columnar silicon layer; a gate insulating film formed... Agent:

20110303986 - Coaxial transistor structure: The present invention discloses a coaxial transistor formed on a substrate, particularly a coaxial metal-oxide-semiconductor field-effect transistor (CMOSFET). The chips or substrates of the CMOSFETs can be stacked up and connected via through-holes to form a coaxial complementary metal-oxide-semiconductor field-effect transistor (CCMOSFET), which is both full-symmetric and full-complementarily, has a... Agent:

20110303987 - Bipolar field effect transistor structures and methods of forming the same: Bipolar field effect transistor (BiFET) structures and methods of forming the same are provided. In one embodiment, an apparatus includes a substrate and a plurality of epitaxial layers disposed over the substrate. The plurality of epitaxial layers includes a first epitaxial layer, a second epitaxial layer disposed over the first... Agent: Skyworks Solutions, Inc.

20110303988 - Semiconductor device and level shift circuit using the same: A level shift circuit includes: a pair of first and second P-channel transistors which are connected in a flip-flop manner and whose sources connected to a first power supply line; a pair of first and second N-channel transistors with the first N-channel transistor provided between the first P-channel transistor and... Agent: Elpida Memory, Inc.

20110303989 - Novel poly resistor and poly efuse design for replacement gate technology: Methods for fabricating a semiconductor device are disclosed. In an example, a method includes forming an isolation region on a substrate, wherein the isolation region extends a depth into the substrate from a substrate surface; forming a recess in the isolation region, wherein the recess is defined by a concave... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110303990 - Semiconductor device and method making same: A FET comprising an LDD region having a high overlap extension beneath the gate thereof and a pit region on the surface of the substrate immediately below the gate and entirely surrounded by said LDD region. The surface dopant concentration is in the vicinity of the gate corner so as... Agent: International Business Machines Corporation

20110303991 - Transistor performance improving method with metal gate: The present disclosure provides a method for making a semiconductor device having metal gate stacks. The method includes forming a high k dielectric material layer on a semiconductor substrate; forming a first metal layer on the high k dielectric material layer; forming a silicon layer on the first metal layer;... Agent:

20110303992 - Semiconductor device and method of manufacture thereof: A semiconductor device includes a substrate, an element formed on the substrate, a nitride film formed on the substrate, a anti-peel film formed on the nitride film, and a molded resin covering the anti-peel film and the element. The anti-peel film has residual compressive stress.... Agent: Mitsubishi Electric Corporation

20110303993 - Semiconductor sensor device, method of manufacturing semiconductor sensor device, package, method of manufacturing package, module, method of manufacturing module, and electronic device: A semiconductor sensor device is provided which is composed of: a semiconductor sensor chip that includes a first substrate, a sensor circuit formed on the first substrate, a first conductive portion electrically connected to the sensor circuit, and a first redistribution layer electrically connected to the first conductive portion; a... Agent: Fujikura Ltd.

20110303994 - Mems device and process: A micro-electrical-mechanical system (MEMS) transducer comprises a layer of dielectric material having an electrode formed in the layer of dielectric material. A region of the layer of the dielectric material is adapted to provide a leakage path which, in use, removes unwanted charge from the layer of dielectric material.... Agent:

20110303998 - Low cost multi-state magnetic memory: A multi-state current-switching magnetic memory element has a magnetic tunneling junction (MTJ), for storing more than one bit of information. The MTJ includes a fixed layer, a barrier layer, and a non-uniform free layer. In one embodiment, having 2 bits per cell, when one of four different levels of current... Agent: Avalanche Technology, Inc.

20110303996 - Magnetic memory devices: A magnetic memory device includes a reference magnetic layer having a fixed magnetization direction, a tunnel barrier layer on the reference magnetic layer, a free layer having a variable magnetization direction on the tunnel barrier layer opposite the reference magnetic layer, and a magnetization reversal auxiliary layer on the free... Agent: Samsung Electronics Co., Ltd.

20110303997 - Magnetic tunnel junction device: A magnetic tunnel junction device comprises a fixed magnetic layer having a first side and a second side, the fixed magnetic layer having a magnetic anisotropy that is out of the film plane of the fixed magnetic layer; a stack of a plurality of bilayers adjacent to the first side... Agent: Regents Of The University Of Minnesota

20110303995 - Seed layer and free magnetic layer for perpendicular anisotropy in a spin-torque magnetic random access memory: A magnetic layer that includes a seed layer comprising at least tantalum and a free magnetic layer comprising at least iron. The free magnetic layer is grown on top of the seed layer and the free magnetic layer is perpendicularly magnetized. The magnetic layer may be included in a magnetic... Agent: International Business Machines Corporation

20110303999 - Semiconductor light-detecting element: Prepared is an n− type semiconductor substrate 1 having a first principal surface 1a and a second principal surface 1b opposed to each other, and having a p+ type semiconductor region 3 formed on the first principal surface 1a side. At least a region opposed to the p+ type semiconductor... Agent: Hamamatsu Photonics K.k.

20110304000 - Solid-state image pickup device and method for manufacturing same, and image pickup apparatus: Disclosed herein is a solid-state image pickup device of a type wherein a pixel is configured to include a sensor unit capable of photoelectric conversion, the image pickup device including: a semiconductor substrate; a charge storage region of a first conduction type, which is formed in the semiconductor substrate and... Agent: Sony Corporation

20110304001 - Fingerprint sensing circuit: Fingerprint sensing circuit packages and methods of making such packages may comprise a first substrate having a top side and a bottom side; the top side comprising a fingerprint image sensing side over which a user's fingerprint is swiped; the bottom side comprising a metal layer forming a fingerprint sensing... Agent: Validity Sensors, Inc.

20110304002 - Photoelectric conversion module and method of manufacturing the same: A photoelectric conversion module according to an embodiment of the present invention includes a plurality of units formed on a substrate and disposed parallel to each other, each including a plurality of photoelectric conversion cells formed in one direction, the plurality of units disposed in an orthogonal direction to the... Agent: Kyocera Corporation

20110304003 - Semiconductor device, camera module, and manufacturing method of semiconductor device: According to the embodiments, a semiconductor substrate, an active layer that is formed on one surface of the semiconductor substrate, a wiring layer that is formed on the active layer and includes a wire to be a convex portion on a surface that is not in contact with the active... Agent:

20110304005 - Resonator element and resonator pixel for microbolometer sensor: A resonator element for the absorption and/or conversion of electromagnetic waves having a predefined wavelength, in particular infrared radiation having a wavelength of 2 μm to 200 μm, into heat, has a three-layer structure formed of a first metal layer, a second metal layer and a dielectric layer interposed between... Agent: Ait Austrian Institute Of Technology Gmbh

20110304004 - Thermoelectric element module and manufacturing method: A thermoelectric element module has P-type thermoelectric materials and N-type thermoelectric materials alternately joined between a pair of substrates. The thermoelectric materials include a thermoelectric mixture powder in which a thermoelectric material powder and a low-melting metal powder are mixed at a predetermined ratio. The thermoelectric mixture powder is thermally... Agent:

20110304007 - Method for manufacturing semiconductor device, and semiconductor substrate: A method for manufacturing a semiconductor device includes forming at least one stripe-shaped protection film over a multilayer film in a scribe region of a semiconductor substrate having a plurality of semiconductor element regions formed therein, the protection film having a thickness larger in a center portion thereof than at... Agent: Fujitsu Semiconductor Limited

20110304006 - Method of alignment mark protection and semiconductor device formed thereby: A method of protecting alignment marks from damage in a planarization process includes providing a substrate including a surface, forming trenches in the substrate from the surface, forming a first dielectric layer on the substrate, forming a second dielectric layer on the first dielectric layer, forming a patterned second dielectric... Agent: Macronix International Co., Ltd.

20110304008 - Wafer level processing method and structure to manufacture semiconductor chip: A semiconductor chip includes a silicon substrate, a transistor in or on a bottom side surface of the substrate, a metallization structure under a bottom side surface of the substrate, a dielectric layer under the substrate and between a first and second metal layers of the metallization structure, a passivation... Agent: Magica Corporation

20110304009 - Mems integrated chip with cross-area interconnection: The present invention discloses a MEMS (Micro-Electro-Mechanical System) integrated chip with cross-area interconnection, comprising: a substrate; a MEMS device area on the substrate; a microelectronic device area on the substrate; a guard ring separating the MEMS device area and the microelectronic device area; and a conductive layer on the surface... Agent: Pixart Imaging Inc. R.o.c.

20110304010 - Electrostatic discharge protection scheme for semiconductor device stacking process: An electrostatic discharge (ESD) protection scheme for a semiconductor device stacking process is provided, in which an equivalent electrical resistance of a specific path is designed to be less than an equivalent electrical resistance of other paths. Accordingly, when a first active layer and a second active layer in the... Agent: Industrial Technology Research Institute

20110304013 - Integrated inductor: A method of fabricating an integrated inductor device includes providing a silicon substrate and forming a thickness of an insulating layer overlying the silicon substrate. The insulating layer includes a dummy structure within a portion of the thickness. The method includes forming an inductor having a first portion and a... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20110304014 - Passive integrated circuit: A passive integrated circuit formed on a substrate, including contact areas of a conductive material specifically capable of receiving bonding pads, wherein the conductive material further creates connections between regions of a lower metallization level.... Agent: Stmicroelectronics (tours) Sas

20110304012 - Semiconductor device and method of forming rf fem with lc filter and ipd filter over substrate: A semiconductor device has a substrate and RF FEM formed over the substrate. The RF FEM includes an LC low-pass filter having an input coupled for receiving a transmit signal. A Tx/Rx switch has a first terminal coupled to an output of the LC filter. A diplexer has a first... Agent: Stats Chippac, Ltd.

20110304011 - Semiconductor device and method of forming shielding layer around back surface and sides of semiconductor wafer containing ipd structure: A semiconductor wafer has an insulating layer over a first surface of the substrate. An IPD structure is formed over the insulating layer. The IPD structure includes a MIM capacitor and inductor. A conductive via is formed through a portion of the IPD structure and partially through the substrate. The... Agent: Stats Chippac, Ltd.

20110304018 - Low temperature deposition and ultra fast annealing of integrated circuit thin film capacitor: Some embodiments of the invention include thin film capacitors formed on a package substrate of an integrated circuit package. At least one of the film capacitors includes a first electrode layer, a second electrode layer, and a dielectric layer between the first and second electrode layers. Each of the first... Agent:

20110304017 - Semiconductor device and method of manufacturing semiconductor device: A lower electrode includes a metal-containing oxide layer having a thickness of 2 nm or less on the surface layer. A metal-containing oxide layer is formed by oxidizing the surface of the lower electrode. A dielectric film includes a first phase appearing at room temperature in the bulk state and... Agent: Renesas Electronics Corporation

20110304015 - Semiconductor package: A semiconductor package includes a substrate in which a plurality of wires are formed; at least one semiconductor chip electrically connected to portions of the plurality of wires; and a shielding can mounted on the substrate, surrounding the at least one semiconductor chip, electrically connected to at least one wire... Agent: Samsung Electronics Co., Ltd.

20110304016 - Wiring board, method of manufacturing the same, and semiconductor device: A wiring board includes a structure in which a plurality of wiring layers are stacked with insulating layers interposed therebetween, a plurality of pads for mounting an electronic component, the pads being formed on an outermost insulating layer on one surface side of the structure and exposed to the surface... Agent: Shinko Electric Industries Co., Ltd.

20110304019 - Method of manufacturing a bipolar transistor semiconductor device and semiconductor devices obtained thereby: Methods for manufacturing a bipolar transistor semiconductor device are described, along with devices fabricated in accordance with the methods. The methods include the steps of forming a stack of layers over a semiconductor body comprising a window definition layer (18,38), a layer (20) of semiconductor material, a first insulating layer... Agent: Nxp B.v.

20110304020 - Wafer level diode package structure: A wafer level vertical diode package structure includes a first semiconductor layer, a second semiconductor layer, an insulative unit, a first conductive structure, and a second conductive structure. The second semiconductor layer is connected with one surface of the first semiconductor layer. The insulative unit is disposed around a lateral... Agent: Harvatek Corporation

20110304021 - Epitaxial growth of iii-v compound semiconductors on silicon surfaces: A device includes a silicon substrate, and a III-V compound semiconductor region over and contacting the silicon substrate. The III-V compound semiconductor region has a U shaped interface with the silicon substrate, with radii of the U shaped interface being smaller than about 1,000 nm.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110304023 - method of generating a hole or recess or well in a substrate: The present invention relates to a method of generating a hole or recess or well in an electrically insulating or semiconducting substrate, and to a hole or recess or well in a substrate generated by this method. The invention also relates to an array of holes or recesses or wells... Agent: Picodrill Sa

20110304022 - Surface passivation by quantum exclusion using multiple layers: A semiconductor device has a multilayer doping to provide improved passivation by quantum exclusion. The multilayer doping includes a plurality M of doped layers, where M is an integer greater than 1. The dopant sheet densities in the M doped layers need not be the same, but in principle can... Agent: California Institute Of Technology

20110304025 - Nitride compound semiconductor element and production method therefor: A nitride compound semiconductor element according to the present invention is a nitride compound semiconductor element including a substrate 1 having an upper face and a lower face and a semiconductor multilayer structure 40 supported by the upper face of the substrate 1, such that the substrate 1 and the... Agent: Panasonic Corporation

20110304024 - Vertical conductive connections in semiconductor substrates: An embodiment of a die comprising: a semiconductor body including a front side, a back side, and a lateral surface; an electronic device, formed in said semiconductor body and including an active area facing the front side; a vertical conductive connection, extending through the semiconductor body and defining a conductive... Agent: Stmicroelectrionic S.r.l.

20110304027 - Semiconductor chip with through electrodes and method for manufacturing the same: A semiconductor chip includes: a device layer having a first surface and a second surface facing away from the first surface, and possessing conductive patterns, which are formed in the first surface such that at least portions of the conductive patterns are exposed on the first surface, and bonding pads,... Agent: Hynix Semiconductor Inc.

20110304026 - Via and method of via forming and method of via filling: An electronic or micromechanical device having first (11) and second (12) surfaces and a via extending through the device from the first surface to the second surface. The via comprises integrally formed first (84, 86), second (82) and third (88) portions. The first portion (84, 86) extends from the first... Agent:

20110304028 - Semiconductor device and method of manufacturing the same: A semiconductor device which forms a barrier layer formed of a doped polysilicon layer on a buried bit line to prevent the bit line conductive layer from being exposed during the etching process for forming a buried word line, thereby improving characteristics of the device, and a method of manufacturing... Agent: Hynix Semiconductor Inc.

20110304029 - Semiconductor device and manufacturing method thereof, wiring board and manufacturing method thereof, semiconductor package, and electronic apparatus: A terminal pad is formed on an active surface of an LSI chip, and a composite barrier metal layer is provided over this terminal pad. In the composite barrier metal layer, a plurality of low-elasticity particles composed of a silicone resin is dispersed throughout a metal base phase composed of... Agent:

20110304030 - Semiconductor device and manufacturing method thereof: A semiconductor device includes: an insulating layer formed on a substrate; a plurality of interlayer insulating films which are formed on the insulating layer and comprise an opening window; a multilayer wiring which is formed with a plurality of wiring layers and a plurality of vias formed in the plurality... Agent: Kabushiki Kaisha Toshiba

20110304031 - Semiconductor device equipped with bonding wires and manufacturing method of semiconductor device equipped with bonding wires: Disclosed is a semiconductor device including a printed-circuit board which includes a plurality of first electrodes, a plurality of second electrodes and a semiconductor chip on which a plurality of first connection pads are aligned in a first line being disposed along an outer circumference side of a top surface... Agent: Casio Computer Co., Ltd.

20110304032 - No lead package with heat spreader: A no-lead electronic package including a heat spreader and method of manufacturing the same. This method includes the steps of selecting a matrix or mapped no-lead lead frame with die receiving area and leads for interconnect; positioning an integrated circuit device within the central aperture and electrically interconnecting the integrated... Agent:

20110304033 - Semiconductor device, semiconductor device storage method, semiconductor device manufacturing method, and semiconductor manufacturing apparatus: A semiconductor package has a semiconductor chip, a lead frame in which a semiconductor chip is mounted on a die pad, and a resin sealing the semiconductor chip and the die pad from an upper surface and a lower surface, the resin has a concave portion disposed at the surface... Agent: Renesas Electronics Corporation

20110304034 - Semiconductor wafer bonding product, method of manufacturing semiconductor wafer bonding product and semiconductor device: A semiconductor wafer bonding product according to the present invention includes: a semiconductor wafer; a transparent substrate provided at a side of a functional surface of the semiconductor wafer; a spacer provided between the semiconductor wafer and the transparent substrate; and a bonded portion continuously provided along a periphery of... Agent:

20110304035 - Package on package having improved thermal characteristics: Provided is a package on package (POP) having improved thermal and electric signal transmitting characteristics. The POP may include a first semiconductor package, a second semiconductor package larger than the first semiconductor package and mounted on the first semiconductor package, and a heat slug adhered to a bottom of a... Agent: Samsung Electronics Co., Ltd.

20110304037 - Semiconductor device: A semiconductor device includes an enclosure of insulating material having an introduction portion and a discharge portion for an insulating refrigerant and also having an opening, filters mounted on the introduction portion and the discharge portion, respectively, so as to prevent conductive foreign matter from entering the enclosure, a power... Agent: Mitsubishi Electric Corporation

20110304036 - Semiconductor package with heat dissipation devices: A semiconductor package includes a first semiconductor chip having a first surface and a second surface which faces away from the first surface, a heat dissipation member, defined with a cavity, disposed on the first surface of the first semiconductor chip and having a plurality of metal pillars which contact... Agent: Hynix Semiconductor Inc.

20110304038 - Semiconductor chip designed to dissipate heat effectively, semiconductor package including the same, and stack package using the same: A semiconductor chip includes a semiconductor chip body having a top surface, a bottom surface, and side surfaces. The bottom surface may have a groove pattern defined by removing a partial thickness of the semiconductor chip body to extend from one or more edges of the semiconductor chip body toward... Agent: Hynix Semiconductor Inc.

20110304039 - Semiconductor device: A semiconductor device includes a semiconductor chip having a first main surface and a second main surface; a stacked structure on which the semiconductor chip is disposed; and a cooling body on which the stacked structure is disposed. The stacked structure includes a first thermal conductor fixed to the cooling... Agent: Mitsubishi Electric Corporation

20110304040 - Sample liquid supply container, sample liquid supply container set, and microchip set: A sample liquid supply container is disclosed. The sample liquid supply container includes a first region which is depressurized therein and is hermetically sealed, a second region which is able to receive a liquid therein, a first penetration portion, in which an interior of the first region is punctured by... Agent: Sony Corporation

20110304042 - Copper bump structures having sidewall protection layers: A work piece includes a copper bump having a top surface and sidewalls. A protection layer is formed on the sidewalls, and not on the top surface, of the copper bump. The protection layer includes a compound of copper and a polymer, and is a dielectric layer.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110304041 - Electrically connecting routes of semiconductor chip package consolidated in die-attachment: A chip package comprises a chip, a plurality of bumps, and a die-attaching tape where the bumps are jointed to the corresponding bonding pads on the active surface of the chip. The die-attaching tape consists of a wiring core, a first dielectric adhesive, and a second dielectric adhesive where the... Agent:

20110304043 - Semiconductor device and manufacturing method of the same: A semiconductor device comprises a semiconductor chip which comprises mode-set terminals, and mode-set wiring lines respectively connected to the mode-set terminals, a sealing layer which covers the semiconductor chip and also covers a land of a first mode-set wiring line that is one of the mode-set wiring lines, the sealing... Agent: Casio Computer Co., Ltd.

20110304046 - Semiconductor device and method for producing the same: A semiconductor element (10) is secured to an island (7), and a plurality of through-holes (8) are formed in the portion of the island (7), which surrounds the area to which the semiconductor element (10) is secured. Further, the electrode pads of the semiconductor element (10) and leads (4) are... Agent: On Semiconductor Trading, Ltd. A Bermuda Limited Liablity Company

20110304044 - Stacked chip package structure and its fabrication method: A stacked chip package structure includes: a first chip and a second chip stacked on a substrate; a first electrical connection structure electrically connecting the substrate and the first chip; and a second electrical connection structure electrically connecting the second chip and the first chip, wherein the second electrical connection... Agent:

20110304045 - Thermally enhanced electronic package and method of manufacturing the same: A thermally enhanced electronic package comprises a chip, a substrate, an adhesive, and an encapsulation. The adhesive or the encapsulation is mixed with carbon nanocapsules. The substrate includes an insulation layer and a wiring layer formed on the substrate. The adhesive covers the chip and the substrate. The chip is... Agent: Chipmos Technologies Inc.

20110304047 - Method for producing a composite material, associated composite material and associated semiconductor circuit arrangements: A method for producing a composite material, associated composite material and associated semiconductor circuit arrangements is disclosed. A plurality of first electrically conducting material particles are applied to a carrier substrate and a second electrically conducting material is galvanically deposited on a surface of the first material particles in such... Agent: Infineon Technologies Ag

20110304048 - Semiconductor apparatus: A semiconductor apparatus has a configuration in which multiple copper wiring layers and multiple insulating layers are alternately layered. A low-impedance wiring is formed occupying a predetermined region. A first wiring pattern includes multiple copper wiring members arranged in parallel with predetermined intervals in a first copper wiring layer, each... Agent: Rohm Co., Ltd.

20110304049 - Semiconductor integrated circuit device and method of manufacturing the same: On the surface of a rewiring including a two-layer film in which a first Ni film is laminated on the top of a Cu film, a pad to which a wire is coupled is formed. The pad includes a two-layer film in which an Au film is laminated on the... Agent: Renesas Electronics Corporation

20110304050 - Semiconductor apparatus: According to one embodiment, a semiconductor apparatus includes a substrate, a first semiconductor device, a circuit pattern, and a potential unit. The substrate includes a first insulating layer and a second insulating layer stacked with the first insulating layer. The first semiconductor device is provided on a side of the... Agent: Kabushiki Kaisha Toshiba

20110304051 - Thermal interface material with support structure: Various semiconductor chip thermal interface material methods and apparatus are disclosed. In one aspect, a method of establishing thermal contact between a first semiconductor chip and a heat spreader is provided. The method includes placing a thermal interface material layer containing a support structure on the first semiconductor chip. The... Agent:

20110304052 - Power grid optimization: A global power distribution network in an integrated circuit comprising a first layer of conductive material and a second layer of conductive material. The first layer of conductive material may be (i) coupled to one or more power supplies and (ii) configured to form a plurality of first rails of... Agent:

20110304053 - Interconnect structure and method of fabricating: An interconnect structure is provided which comprises a semiconductor substrate; a patterned and cured photoresist wherein the photoresist contains a low k dielectric substitutent and contains a fortification layer on its top and sidewall surfaces forming vias or trenches; and a conductive fill material in the vias or trenches. Also... Agent: International Business Machines Corp.

20110304057 - Semiconductor device and manufacturing method of the device: A semiconductor device includes a semiconductor substrate including a first surface serving as an element formation surface, and a second surface opposite to the first surface; a through-via penetrating the semiconductor substrate; an insulating via coating film formed between a sidewall of the through-via and the semiconductor substrate; and an... Agent: Panasonic Corporation

20110304054 - Semiconductor device and method of fabricating the same: According to one embodiment, a semiconductor device including a conductive layer formed in a trench formed in a semiconductor substrate via an insulating film, an opening portion of the trench being formed with a plurality of interconnected concaves and with a curved surface as a folding fan so as to... Agent: Kabushiki Kaisha Toshiba

20110304055 - Semiconductor integrated circuit with multi-cut via and automated layout method for the same: A semiconductor integrated circuit includes a first wiring formed on a first wiring layer and prolonged in a first direction, a second wiring formed on a second wiring layer and prolonged in a second direction, a third wiring formed on the first wiring layer and prolonged in the first direction,... Agent: Renesas Electronics Corporation

20110304056 - Stack-type semiconductor package and method of manufacturing the same: A stack-type semiconductor package includes: a substrate; a first through electrode module stacked on the substrate comprising a first chip and a second chip connected to the first chip by a first through electrode; a second through electrode module stacked on the first through electrode comprising a third chip and... Agent: Samsung Electronics Co., Ltd.

20110304059 - Circuit board, circuit board assembly, and semiconductor device: A disclosed circuit board includes a substrate, a plurality of electrode pads formed on the substrate, and a groove formed between adjacent electrode pads on the substrate. Further, the electrode pads are surrounded by the groove to have an air space between the adjacent electrode pads.... Agent: Fujitsu Limited

20110304058 - Semiconductor device and method of forming flipchip interconnection structure with bump on partial pad: A semiconductor device has a semiconductor die having a plurality of bumps formed over a surface of the semiconductor die. The bumps can include a fusible portion and non-fusible portion. Conductive traces are formed over the substrate with interconnect sites having an exposed sidewall and sized according to a design... Agent: Stats Chippac, Ltd.

20110304060 - Metal thin film connection structure, manufacturing method thereof and array substrate: Embodiments of the invention relates to a metal thin film connection structure, comprising a first metal layer pattern; a second metal layer pattern which is separately disposed with the first metal layer pattern; a first insulating layer formed on the first metal layer pattern and the second metal layer pattern;... Agent: Beijing Boe Optoelectronics Technology Co., Ltd.

20110304061 - Semiconductor device: A semiconductor device in which it is possible to suppress short-circuiting between pads for chip arising from dicing processing is provided. The semiconductor device includes a semiconductor substrate, multiple first pads, and multiple second pads. The first pads are formed in an element formation region and the second pads are... Agent: Renesas Electronics Corporation

20110304062 - Chip package structure, chip package mold chase and chip package process: A chip package structure including a carrier, a chip and a molding compound is provided. The chip is disposed on the carrier. The molding compound encapsulates a portion of the carrier and the chip. The top surface of the molding compound has a pin one dot and a pin gate... Agent: Advanced Semiconductor Engineering, Inc.

20110297909 - Magnetic memory element and magnetic memory: A magnetic memory element includes: a first magnetization free layer formed of a ferromagnetic material having perpendicular magnetic anisotropy; a second magnetization free layer provided near the first magnetization free layer and formed of a ferromagnetic material having in-plane magnetic anisotropy; a reference layer formed of a ferromagnetic material having... Agent:

20110297908 - Phase change memory cells and fabrication thereof: A phase change memory cell, e.g. a line-cell (2), and fabrication thereof, the cell comprising: two electrodes (6, 8); phase change memory material (10) and a dielectric barrier (12). The dielectric barrier (12) is arranged to provide electron tunnelling, e.g. Fowler-Nordheim tunnelling, to the phase change memory material (10). A... Agent:

20110297910 - Method of fabrication of programmable memory microelectric device: A method of fabricating a programmable memory microelectronic device includes depositing onto a first electrode an intermediate layer of a material having a chalcogenide; depositing an ionizable metallic layer on the intermediate layer; irradiating with ultraviolet radiation the ionizable metallic layer so that metallic ions from the ionizable metallic layer... Agent:

20110297911 - Semiconductor device and method for manufacturing the same: A technique used for a semiconductor device formed by stacking multiple structural bodies each having a semiconductor device, for preventing generation of thermal load on a structural body at a lower layer which is caused by a laser used in a step of forming a structural body at an upper... Agent: Hitachi, Ltd.

20110297912 - Non-volatile memory having 3d array of read/write elements with vertical bit lines and laterally aligned active elements and methods thereof: A three-dimensional array of memory elements is formed across multiple layers of planes positioned at different distances above a semiconductor substrate. The memory elements reversibly change a level of electrical conductance in response to a voltage difference being applied across them. The three-dimensional array includes a two-dimensional array of pillar... Agent:

20110297913 - Nanostructure optoelectronic device having sidewall electrical contact: Nanostructure array optoelectronic devices are disclosed. The optoelectronic device may have a top electrical contact that is physically and electrically connected to sidewalls of the array of nanostructures (e.g., nanocolumns). The top electrical contact may be located such that light can enter or leave the nanostructures without passing through the... Agent: Sundiode Inc.

20110297914 - Gallium nitride-based flip-chip light-emitting diode with double reflective layers on its side and fabrication method thereof: The present invention discloses a double-reflective-layer gallium nitride-based flip-chip light-emitting diode with both a distributed Bragg reflector and a metal reflective layer on its side and a fabrication method thereof. The light-emitting diode includes: a sapphire substrate; a buffer layer, an N-GaN layer, a multiple-quantum-well layer and a P-GaN layer... Agent: Xiamen Sanan Optoelectronics Technology Co., Ltd.

20110297915 - Materials, systems and methods for optoelectronic devices: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically... Agent: Invisage Technologies, Inc.

20110297916 - N-and p-channel field-effect transistors with single quantum well for complementary circuits: A complementary metal oxide semiconductor (CMOS) device in which a single InxGa1-xSb quantum well serves as both an n-channel and a p-channel in the same device and a method for making the same. The InxGa1-xSb layer is part of a heterostructure that includes a Te-delta doped AlyGa1-ySb layer above the... Agent: The Government Of The United States Of America, As Represented By The Secretary Of The Navy

20110297924 - Aromatic amine derivative and organic electroluminescent element: Provided are a long-lifetime organic electroluminescence device which can be fabricated in an improved yield owing to suppressed crystallization of molecules, and an aromatic amine derivative that realizes the device, i.e., a novel aromatic amine derivative having a specific structure. Specifically provided are an organic electroluminescence device, including an organic... Agent: Idemitsu Kosan Co., Ltd.

20110297923 - Aromatic amine derivative and organic electroluminescent element using same: o

20110297918 - Benzanthracene compound and organic electroluminescence device using the same:

20110297926 - Electronic appliance and light-emitting device: An EL element having a novel structure is provided, which is suitable for AC drive. A light-emitting element of the invention is provided with material layers (material layers each having approximately symmetric I-V characteristics with respect to the zero point in a graph having the abscissa axis showing current values... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110297917 - Organic electroluminescent element and method of manufacturing the same: A method of manufacturing an organic EL element, which may be a top-emitting or a transparent organic EL element, provides an organic EL element having a low driving voltage and a high efficiency. The organic EL element includes a substrate; an anode; an organic EL layer which includes at least... Agent: Fuji Electric Holdings Co., Ltd.

20110297925 - Organic electronic device: The present invention relates to organic electroluminescent devices which comprise aromatic nitrogen heterocyclic compounds, in particular in a hole-injection layer and/or in a hole-blocking layer and/or in an electron-transport layer and/or in an emitting layer.... Agent: Merck Patent Gmbh

20110297919 - Organic light-emitting device: e

20110297922 - Radiation-emitting device: A radiation-emitting device for emitting electromagnetic radiation which is a mixture of at least three different partial radiations of a first, a second and a third wavelength range. The radiation-emitting device here comprises a substrate 1; a first electrode 2 and a second electrode 6, at least one first layer... Agent: Osram Opto Semiconductors Gmbh

20110297920 - Thin film transistor,method of manufacturing the same, and electronic device: A thin film transistor with improved performance is provided. The thin film transistor includes a gate electrode, an organic semiconductor layer, and a gate insulating layer which is positioned between the gate electrode and the organic semiconductor layer and is adjacent to the organic semiconductor layer. The gate insulating layer... Agent: Sony Corporation

20110297921 - Water-barrier encapsulation method: The present invention generally relates to organic light emitting diode (OLED) structures and methods for their manufacture. To increase the lifetime of an OLED structure, an encapsulating layer may be deposited over the OLED structure. The encapsulating layer may fully enclose or “encapsulate” the OLED structure. The encapsulating layer may... Agent: Applied Materials, Inc.

20110297929 - Array substrate and method for manufacturing the same: The present invention provides an array substrate, comprising: a base substrate; a pixel electrode pattern and a gate pattern formed on the base substrate, the gate pattern comprises a gate scanning line and a gate electrode of a transistor, both of the gate scanning line and the gate electrode comprise... Agent: Beijing Boe Optoelectronics Technology Co., Ltd.

20110297931 - Method of fabricating a thin film transistor array substrate: A method of fabricating a thin film transistor array substrate is presented. The method entails forming a gate interconnection line on an insulating substrate, forming a gate insulating layer on the gate interconnection line, forming a semiconductor layer and a data interconnection line on the semiconductor layer, sequentially forming multiple... Agent:

20110297927 - Oxide based memory: Methods, devices, and systems associated with oxide based memory are described herein. In one or more embodiments, a method of forming an oxide based memory cell includes forming a first electrode, forming a tunnel barrier, wherein a first portion of the tunnel barrier includes a first material and a second... Agent: Micron Technology, Inc.

20110297928 - Semiconductor device: The semiconductor device is provided in which a plurality of memory cells each including a first transistor, a second transistor, and a capacitor is arranged in matrix and a wiring (also referred to as a bit line) for connecting one of the memory cells and another one of the memory... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110297930 - Thin film transistor display panel and manufacturing method of the same: A TFT display panel having a high charge mobility and making it possible to obtain uniform electric characteristics with respect to a large-area display is provided as well as a manufacturing method thereof. A TFT display panel includes a gate electrode formed on an insulation substrate, a first gate insulting... Agent:

20110297934 - Semiconductor device: A reverse conducting semiconductor device having an IGBT element region and a diode element region in one semiconductor substrate is provided. An electric current detection region is arranged adjacent to the IGBT element region, and a collector region of the IGBT element region is extended to connect with a collector... Agent: Toyota Jidosha Kabushiki Kaisha

20110297932 - Semiconductor device and integrated semiconductor device: The present disclosure provides a semiconductor device including: a semiconductor identifier holding portion configured to hold a semiconductor identifier for identifying a semiconductor device; and a control portion configured such that upon elapse of a predetermined time period following receipt of an externally input instruction to hold the semiconductor identifier,... Agent: Sony Corporation

20110297935 - Semiconductor device with appraisal circuitry: A semiconductor device comprises a substrate provided with a doping of a first type, on which an electronic circuit is provided surrounded by a circuit portion of the substrate provided with a doping of a second type; at least one pad for connecting the electronic circuit to an external device... Agent: Freescale Semiconductor, Inc.

20110297933 - Semiconductor packages: Provided are a semiconductor package, a semiconductor memory module including the semiconductor package, and a system including the semiconductor memory module. The semiconductor package may include a plurality of main terminals arranged on a surface of the semiconductor package with constant intervals, and the plurality of main terminals may include... Agent: Samsung Electronics Co., Ltd.

20110297936 - Semiconductor device and display device: A semiconductor device 700 includes a substrate and an optical sensor unit 700 formed on the substrate for sensing light and for generating a sensing signal, the optical sensor unit 700 including a first thin film diode 701A for detection of light in a first wavelength range, a second thin... Agent: Sharp Kabushiki Kaisha

20110297940 - Micromachine and method for manufacturing the same: A semiconductor element of the electric circuit includes a semiconductor layer over a gate electrode. The semiconductor layer of the semiconductor element is formed of a layer including polycrystalline silicon which is obtained by crystallizing amorphous silicon by heat treatment or laser irradiation, over a substrate. The obtained layer including... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110297939 - Semiconductor device: An object is to provide a semiconductor device having a novel structure with a high degree of integration. A semiconductor device includes a semiconductor layer having a channel formation region, a source electrode and a drain electrode electrically connected to the channel formation region, a gate electrode overlapping with the... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110297937 - Thin film transistor with offset structure: A thin film transistor (TFT) having an offset structure is disclosed. The TFT maintains a sufficiently low “off” current and a sufficiently high “on” current. The TFT includes an active region. The active region includes a gate electrode; an active layer that overlaps with the gate electrode; a gate insulating... Agent:

20110297938 - Thin film transistor, method of manufacturing the same, and electronic device: A method of manufacturing a thin film transistor includes: forming a gate electrode on a substrate; forming a gate insulating layer on the gate electrode; forming an organic semiconductor layer on the gate insulating layer; forming an organic semiconductor pattern by selectively removing part of the organic semiconductor layer by... Agent: Sony Corporation

20110297941 - Flat panel display device and method of manufacturing the same: A flat panel display device having increased capacitance and a method of manufacturing the flat panel display device are provided. A flat panel display device includes: a plurality of pixel areas, each located at a crossing region of a gate line, a data line, and a common voltage line; a... Agent:

20110297945 - Flat panel display device and method of manufacturing the same: A method of manufacturing a flat panel display device includes: forming a semiconductor layer of a thin film transistor (TFT) on a substrate; forming a gate electrode on the semiconductor layer with a gate insulating layer between the gate electrode and the semiconductor layer, and doping source and drain regions... Agent:

20110297944 - Organic light-emitting display apparatus and method of manufacturing the same: An organic light-emitting display apparatus and a method of manufacturing the same are disclosed. The organic light-emitting display apparatus includes: an active layer formed on a substrate, a gate electrode including: a first gate electrode layer insulated from the active layer and including a semi-transmissive conductive material, a second gate... Agent: Samsung Mobile Display Co., Ltd.

20110297942 - Organic light-emitting display device and method of manufacturing the same: An organic light-emitting display device and a method of manufacturing the same are disclosed. The organic light-emitting display device includes: a lower substrate including a display area and a non-display area, the lower substrate further including a power supply wiring unit disposed in the non-display area, the power supply wiring... Agent: Samsung Mobile Display Co., Ltd.

20110297943 - Organic light-emitting display device and method of manufacturing the same: An organic light-emitting display device including an insulating layer having an uneven portion formed in an emission area so as to reduce changes in color characteristics due to a viewing angle, and a method of manufacturing the same. The organic light-emitting display device includes: a substrate including an emission area... Agent:

20110297947 - Pixel structure: A pixel structure having the following structure is provided. A light-shielding layer with a flat layer covering thereon is disposed on a substrate. A channel layer, a data line and a first pad are disposed on the flat layer. A source and a drain partially cover two sides of the... Agent: Au Optronics Corporation

20110297946 - Thin film transistor array substrate and manufacturing method thereof: A thin film transistor array substrate includes a gate line disposed on a substrate, the gate line comprising a gate electrode including a lower film and an upper film thicker than the lower film, a gate insulating layer formed on the gate line, a semiconductor layer formed on the gate... Agent:

20110297948 - Organic light-emitting display: An organic light-emitting display is disclosed. In one embodiment, the display includes i) a substrate, ii) a thin film transistor formed on the substrate, and comprising i) a gate electrode, ii) an active layer electrically insulated from the gate electrode, and iii) source and drain electrodes that are electrically connected... Agent: Samsung Mobile Display Co. Ltd.

20110297950 - Crystalline semiconductor film manufacturing method, substrate coated with crystalline semiconductor film, and thin-film transistor: To provide a method of manufacturing a crystalline semiconductor film having a crystal structure with favorable in-plane uniformity. The method includes: irradiating an amorphous semiconductor film with a continuous-wave laser beam to increase a temperature of the amorphous semiconductor film to a range of 600° C. to 1100° C., the... Agent: Panasonic Corporation

20110297949 - Organic light emitting display and method of fabricating the same: An organic light emitting display and method of fabricating thereof, the display including a substrate including a first thin film transistor region and a second thin film transistor region; a buffer layer on the substrate; a first and a second semiconductor layer on the buffer layer; a gate insulating layer... Agent:

20110297951 - Organic light emitting diode display and method for manufacturing the same: An organic light emitting diode (OLED) display and a manufacturing method thereof, the OLED display includes: a substrate main body; a polycrystalline silicon layer pattern including a polycrystalline active layer formed on the substrate main body and a first capacitor electrode; a gate insulating layer pattern formed on the polycrystalline... Agent: Samsung Mobile Display Co., Ltd.

20110297952 - Thin film transistor and display device using the same and method for manufacturing the same: A thin film transistor according to an example embodiment includes: a substrate body; a semiconductor layer formed on the substrate body and comprising a polycrystalline silicon film having a surface resistance from about 2000 ohm/sq to about 8000 ohm/sq; and a source electrode and a drain electrode each contacted with... Agent: Samsung Mobile Display Co., Ltd.

20110297959 - Chamfered freestanding nitride semiconductor wafer and method of chamfering nitride semiconductor wafer: Technology of making freestanding gallium nitride (GaN) wafers has been matured at length. Gallium nitride is rigid but fragile. Chamfering of a periphery of a GaN wafer is difficult. At present edges are chamfered by a rotary whetstone of gross granules with weak pressure. Minimum roughness of the chamfered edges... Agent: Sumitomo Electric Industries, Ltd.

20110297957 - Compound seminconductor structure: A method for manufacturing a compound semiconductor structure, includes (a) selecting a conductive SiC substrate in accordance with color and resistivity and (b) epitaxially growing a GaN series compound semiconductor layer on the selected conductive SiC substrate. The step (a) preferably selects a conductive SiC substrate whose main color is... Agent: Fujitsu Limited

20110297961 - Field effect power transistors: A normally OFF field effect transistor (FET) comprising: a plurality of contiguous nitride semiconductor layers having different composition and heterojunction interfaces between contiguous layers, a Fermi level, and conduction and valence energy bands; a source and a drain overlying a top nitride layer of the plurality of nitride layers and... Agent: Visic Technologies Ltd.

20110297958 - Gate after diamond transistor: A gate after diamond transistor and method of making comprising the steps of depositing a first dielectric layer on a semiconductor substrate, depositing a diamond particle nucleation layer on the first dielectric layer, growing a diamond thin film layer on the first dielectric layer, defining an opening for the gate... Agent: The Government Of The United States Of America, As Represented By The Secretary Of The Navy

20110297953 - Light emitting diode and method for manufacturing the same: An exemplary light emitting diode includes a conductive base, an LED die, a transparent conductive layer and at least one pad. The LED die includes a p-type GaN layer connected to the base, an active layer on the p-type GaN layer, and an n-type GaN layer on the active layer.... Agent: Hon Hai Precision Industry Co., Ltd.

20110297956 - Method for manufacturing gallium nitride compound semiconductor, and semiconductor light emitting element: The present invention is a method of manufacturing a gallium nitride-based compound semiconductor, including growing an m-plane InGaN layer whose emission peak wavelength is not less than 500 nm by metalorganic chemical vapor deposition. Firstly, step (A) of heating a substrate in a reactor is performed. Then, step (B) of... Agent: Panasonic Corporation

20110297954 - Semiconductor device, schottky barrier diode, electronic apparatus, and method of producing semiconductor device: the composition change layer 23 has composition that changes from a cathode electrode 13 side toward an anode electrode 12 side in the direction perpendicular to the principal surface of the composition change layer, has a negative polarization charge that is generated due to the composition that changes, and contains... Agent:

20110297955 - Semiconductor light emitting diode: A highly-efficient semiconductor light emitting diode with improved light extraction efficiency comprising at least a substrate having a plurality of crystal planes, a first conductivity-type barrier layer, an active layer serving as a light emitting layer and a second conductivity-type barrier layer stacked on the substrate. The semiconductor light emitting... Agent: National Institute Of Advanced Industrial Science And Technology

20110297960 - Transistor assembly and method for manufacturing the same: A method for manufacturing a transistor assembly includes the steps of: (a) forming a transistor; (b) polishing a base substrate; and (c) securing the transistor of which the base substrate is polished to a support substrate. The step (a) is a step of forming a first semiconductor layer and a... Agent: Panasonic Corporation

20110297964 - Ac switch: An AC switch includes a first compound semiconductor MOSFET and a second compound semiconductor MOSFET whose sources are connected with each other, a first output terminal connected to the drain of the first compound semiconductor MOSFET, and a second output terminal connected to the drain of the second compound semiconductor... Agent: Rohm Co., Ltd.

20110297962 - Schottky diode with diamond rod and method for manufacturing the same: The present invention relates to a Schottky diode with a diamond rod, which comprises: a substrate with a gate layer formed thereon; a patterned insulating layer disposed on the gate layer, wherein the patterned insulating layer comprises a first contact region and a second contact region; a diamond rod disposed... Agent:

20110297963 - Silicon carbide semiconductor device and method of manufacturing thereof: A silicon carbide semiconductor device is provided that includes a semiconductor layer made of silicon carbide and having a surface with a trench having a sidewall formed of a crystal plane tilted at an angle in a range of not less than 50° and not more than 65° relative to... Agent: Sumitomo Electric Industries, Ltd.

20110297966 - Light emitting diode: A light emitting diode includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode, and a second electrode. The first semiconductor layer, the active layer, and the second semiconductor layer are orderly stacked on the substrate. The first electrode is electrically connected to... Agent: Tsinghua University

20110297965 - Light-emitting device and method of manufacturing the same: According to one embodiment, a light-emitting device includes a semiconductor layer, first and second electrode portions, a first insulating film, and a metal layer. The semiconductor layer includes a first main surface, a second main surface on an opposite side to the first main surface, a third main surface connecting... Agent: Kabushiki Kaisha Toshiba

20110297967 - Semiconductor light-receiving element and optical module: A semiconductor light-detecting element includes: a semiconductor substrate of a first conductivity type having a band gap energy, a first principal surface, and a second principal surface opposed to the first principal surface; a first semiconductor layer of the first conductivity type on the first principal surface and having a... Agent: Mitsubishi Electric Corporation

20110297968 - Rod-shaped semiconductor device: A rod-shaped semiconductor device having a light-receiving or light-emitting function is equipped with a rod-shaped substrate made of p-type or n-type semiconductor crystal, a separate conductive layer which is formed on a part of the surface of the substrate excluding a band-shaped part parallel to the axis of the substrate... Agent: Kyosemi Corporation

20110297970 - Integrally formed single piece light emitting diode light wire and uses thereof: An integrally formed single piece light emitting diode (LED) light wire that provides a smooth, uniform lighting effect from all directions of the LED light wire. The integrally formed single piece LED light wire includes a support substrate, a conductive base formed on the support substrate, the conductive bus comprising... Agent:

20110297974 - Led assembly with color temperature correction capability: An illumination assembly is provided which is capable of correcting a color temperature. The assembly includes a substrate with a plurality of coatings applied on a respective plurality of surface portions of a base material. A light emitting device includes one or more light emitting elements of a first color... Agent:

20110297971 - Led lighting device: An LED lighting device A1 includes a plurality of LED chips 32, an LED unit 2 in which the LED chips 32 are mounted, and a mount 1 holding the LED unit 2. This arrangement allows the appearance or structure of the LED lighting device to be adapted for various... Agent: Rohm Co., Ltd.

20110297973 - Led with an adsorption plate: The present invention relates to an LED with an adsorption plate attached thereto, and more particularly, to an LED which is covered with a light transmitter made of a light-transmitting material to prevent light scattering and to restrict the light radiation range to the size of the light transmitter. The... Agent:

20110297972 - Light emitting device having plurality of light emitting cells and method of fabricating the same: A light emitting device having a plurality of light emitting cells is disclosed. The light emitting device comprises a substrate; a plurality of light emitting cells positioned on the substrate to be spaced apart from one another, each of the light emitting cells comprising a p-type lower semiconductor layer, an... Agent: Seoul Semiconductor Co., Ltd.

20110297975 - Light-emitting unit array: A light-emitting unit array includes a plurality of light-emitting units arranged and integrated monolithically in an array, and each of the light-emitting units includes a first doped type layer, a second doped type layer, a light-emission layer, and a photonic crystal structure. The light emission layer is disposed between the... Agent: Industrial Technology Research Institute

20110297969 - Semiconductor light emitting device: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a transparent layer, and a fluorescent material layer. The transparent layer is provided on the first major surface of the semiconductor layer. The transparent layer is transparent with respect to light... Agent: Kabushiki Kaisha Toshiba

20110297977 - Display device: A display device includes a first organic electroluminescent element and a second organic electroluminescent element. The first and second organic electroluminescent elements have different luminescent colors. The first and second organic electroluminescent elements each include, in series, a first electrode, a first charge transport layer, a second charge transport layer,... Agent: Canon Kabushiki Kaisha

20110297976 - Illumination module: An illumination module including a substrate and a plurality of first and second LED chips is provided. The substrate has a plurality of device bonding areas, and each of device bonding areas has two sub-device bonding areas. Each sub-device bonding area has a first, second, and common route. The first... Agent: Everlight Yi-guang Technology (shanghai) Ltd.

20110297978 - Light-emitting diode, method for manufacturing the same, and light-emitting diode lamp: the light-emitting diode (1) includes a compound semiconductor layer (2) including a light-emitting portion (8) having a light-emitting layer (9) and a substrate (3), in which an external reflection layer (4) having a reflectivity higher than that of the substrate (3) is provided on a side surface of the substrate... Agent: Showa Denko K.k.

20110297979 - Passivation for a semiconductor light emitting device: In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.... Agent: Koninklijke Philips Electronics N.v.

20110297981 - Fluorescent structure and method for forming the fluorescent structure and led package using the same: A fluorescent structure for a light-emitting package includes a first fluorescent layer and a second fluorescent layer covering the first fluorescent layer. The first fluorescent layer includes first fluorescent strips, and defines first transparent regions between the first fluorescent strips. The second fluorescent layer includes second fluorescent strips, and defines... Agent: Advanced Optoelectronic Technology, Inc.

20110297989 - Light emitting device: The light emitting device comprises a mounting substrate and an LED chip which comprises an n-type nitride semiconductor layer, a nitride light emission layer on the n-type nitride semiconductor layer, p-type nitride semiconductor layer on the nitride light emission layer, an anode electrode opposite of the nitride light emission layer... Agent:

20110297990 - Light emitting device and display: A light emitting device comprises: an LED chip having a quantum well structure and a light emitting layer made of a gallium nitride compound semiconductor; a first transparent material covering the LED chip; a second transparent material for protecting the LED chip and the first transparent material; and a phosphor... Agent:

20110297993 - Light emitting device having light extraction structure and method for manufacturing the same: A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or... Agent:

20110297986 - Light source apparatus using semiconductor light emitting device: According to one embodiment, a light source apparatus includes a semiconductor light emitting device, a mounting substrate, first and second connection members. The semiconductor light emitting device includes a light emitting unit, first and second conductive members, a sealing member, and an optical layer. The mounting substrate includes a base... Agent: Kabushiki Kaisha Toshiba

20110297987 - Optical semiconductor device and method for manufacturing same: According to one embodiment, an optical semiconductor device includes a light emitting layer, a transparent layer, a first metal post, a second metal post and a sealing layer. The light emitting layer includes a first and a second major surface, a first and a second electrode. The second major surface... Agent: Kabushiki Kaisha Toshiba

20110297982 - Optoelectronic semiconductor chip: A semiconductor chip is specified, comprising an active layer provided for emitting an electromagnetic radiation, and a two-dimensional arrangement of structural units, which is disposed downstream of the active layer in a main emission direction of the semiconductor chip. The structural units are arranged in an arbitrary statistical distribution. Such... Agent:

20110297984 - Photoelectrical element having a thermal-electrical structure: A photoelectrical element having a thermal-electrical structure including: a photoelectrical transforming layer, two semiconductor layers formed on the two opposite sides of the photoelectrical transforming layer respectively, an electrically conductive structure formed on at least one of the semiconductor layer, and a thermal-electrical structure formed in the electrically conductive structure,... Agent:

20110297991 - Semiconductor light emitting device: A wiring electrode is provided on a mount substrate. A light emitting element is provided on the wiring electrode to connect electrically with the wiring electrode and is configured to emit a blue to ultraviolet light. A reflective film is provided above the light emitting element to cover the light... Agent: Kabushiki Kaisha Toshiba

20110297992 - Semiconductor light emitting device: There is provided a semiconductor light emitting device that minimizes reflection or absorption of emitted light, maximizes luminous efficiency with the maximum light emitting area, enables uniform current spreading with a small area electrode, and enables mass production with high reliability and high quality. A semiconductor light emitting device according... Agent: Samsung Led Co., Ltd.

20110297980 - Semiconductor light emitting device and method for manufacturing same: According to one embodiment, a semiconductor light emitting device includes a light emitting chip and a fluorescent material layer. The light emitting chip includes a semiconductor layer, a first electrode, a second electrode, an insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second... Agent: Kabushiki Kaisha Toshiba

20110297983 - Semiconductor light emitting device and method for manufacturing same: According to one embodiment, a semiconductor light emitting device includes a light emitting unit, first and second conductive members, an insulating layer, a sealing member, and an optical layer. The light emitting unit includes a semiconductor stacked body and first and second electrodes. The semiconductor stacked body includes first and... Agent: Kabushiki Kaisha Toshiba

20110297985 - Semiconductor light emitting device and method for manufacturing semiconductor light emitting device: According to one embodiment, a semiconductor light emitting device includes a light emitting section, a light transmitting section, a wavelength conversion section, a first conductive section, a second conductive section and a sealing section. The light emitting section includes a first major surface, a second major surface opposite from the... Agent: Kabushiki Kaisha Toshiba

20110297988 - Transparent substrate for photonic devices: where TMEo, B and TD1—o are constants with TME—o having a value in the range of 10.0 to 25.0 nm, B having a value in the range of 10.0 to 16.5 nm and TD1—o having a value in the range of 23.9*nD1, to 28.3*nD1 nm, with nD1 representing the refractive... Agent: Agc Glass Europe

20110298000 - Chip package: According to an embodiment of the invention, a chip package is provided, which includes: a substrate having a first surface and a second surface; an optical device between the first surface and the second surface of the substrate; a protection layer formed on the second surface of the substrate, wherein... Agent:

20110297996 - Electronic device and method of manufacturing the same: The cover (50) includes a substrate (52) and at least a first conductive structure (66, 68) that is arranged in a first plane between the adhesive layer (28) and the substrate (52). First and second transverse electrical conductors (32, 34) transverse to the first plane (61) electrically interconnect the first... Agent: Nederlandse Organisatie Voor Toegepast- Natuurwetenschappelijk Onderzoek Tno

20110298002 - Light-emitting diode, light-emitting diode lamp, method for manufacturing light-emitting diode: The object of the invention is to provide a light-emitting diode that is excellent in terms of thermal radiation properties and is capable of suppressing cracks in the substrate during joining and emitting light with high luminance by applying a high voltage, a light-emitting diode lamp, and a method of... Agent: Showa Denko K.k.

20110297995 - Method for manufacturing light-emitting device and light-emitting device manufactured by the same: In one embodiment, a method for manufacturing a light-emitting device is disclosed. The method can include removing a substrate from a semiconductor layer. The semiconductor layer is provided on a first main surface of the substrate. The semiconductor layer includes a light-emitting layer. At least a top surface and side... Agent: Kabushiki Kaisha Toshiba

20110298001 - Method for manufacturing light-emitting device and light-emitting device manufactured by the same: In one embodiment, a method for manufacturing a light-emitting device is disclosed. The method can include removing a substrate from a semiconductor layer. The semiconductor layer is provided on a first main surface of the substrate. The semiconductor layer includes a light-emitting layer. At least a top surface and side... Agent: Kabushiki Kaisha Toshiba

20110297999 - Optoelectronic semiconductor component: An optoelectronic semiconductor component is provided, having a connection carrier (2), an optoelectronic semiconductor chip (1), which is arranged on a mounting face (22) of the connection carrier (2), and a radiation-transmissive body (3), which surrounds the semiconductor chip (1), wherein the radiation-transmissive body (3) contains a silicone, the radiation-transmissive... Agent: Osram Opto Semiconductors Gmbh

20110297994 - Semiconductor light emitting device: According to one embodiment, a semiconductor light emitting device includes a plurality of semiconductor layers, a first electrode, a second electrode, an insulating layer, a first interconnection layer, a second interconnection layer, a first metal pillar, a second metal pillar and a resin layer, and is mounted in a bent... Agent: Kabushiki Kaisha Toshiba

20110297997 - Semiconductor light emitting device: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, and a second insulating layer. The semiconductor layer includes a first... Agent: Kabushiki Kaisha Toshiba

20110297998 - Semiconductor light emitting device and method for manufacturing the same: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar and a second insulating layer. The semiconductor layer includes a first... Agent: Kabushiki Kaisha Toshiba

20110298004 - Encapsulating sheet for optical semiconductor: The present invention relates to an encapsulating sheet for an optical semiconductor, including: a phosphor-containing layer containing a phosphor; and an encapsulating resin layer containing an encapsulating resin and being laminated on the phosphor-containing layer, in which, on the laminated surface therebetween, an edge of the phosphor-containing layer protrudes from... Agent: Nitto Denko Corporation

20110298003 - Epoxy resin composition for optical use, optical component using the same, and optical semiconductor device obtained using the same: The present invention relates to an epoxy resin composition for optical use including the following ingredients (A) to (C): (A) an epoxy resin; (B) a curing agent; and (C) an inorganic filler including (c1) an inorganic filler having a refractive index larger than a refractive index of a cured product... Agent: Nitto Denko Corporation

20110298005 - Method for fabricating an n-type semiconductor material using silane as a precursor: A method for fabricating a group III-V n-type nitride structure comprises fabricating a growth Si substrate and then depositing a group III-V n-type layer above the Si substrate using silane gas (SiH4) as a precursor at a flow rate set to a first predetermined value (210). Subsequently, the SiH4 flow... Agent: Lattice Power (jiangxi) Corporation

20110298006 - Semiconductor light emitting device and method for fabricating the same: A semiconductor light emitting device includes a nitride semiconductor layer including a first cladding layer, an active layer, and a second cladding layer, and a current blocking layer configured to selectively inject a current into the active layer. The second cladding layer has a stripe-shaped ridge portion. The current blocking... Agent: Panasonic Corporation

20110298007 - Select devices including an open volume, memory devices and systems including same, and methods for forming same: Select devices including an open volume that functions as a high bandgap material having a low dielectric constant are disclosed. The open volume may provide a more nonlinear, asymmetric I-V curve and enhanced rectifying behavior in the select devices. The select devices may comprise, for example, a metal-insulator-insulator-metal (MIIM) diode.... Agent: Micron Technology, Inc.

20110298009 - Epitaxial substrate for electronic device and method of producing the same: An object of the present invention is to provide an epitaxial substrate for an electronic device, in which a lateral direction of the substrate is defined as a main current conducting direction and a warp configuration of the epitaxial substrate is adequately controlled, as well as a method of producing... Agent: Dowa Electronics Materials Co., Ltd.

20110298008 - Self-aligned embedded sige structure and method of manufacturing the same: A low energy surface is formed by a high temperature anneal of the surfaces of trenches on each side of a gate stack. The material of the semiconductor layer reflows during the high temperature anneal such that the low energy surface is a crystallographic surface that is at a non-orthogonal... Agent: International Business Machines Corporation

20110298010 - Cell library, integrated circuit, and methods of making same: A cell library intended to be used to form an integrated circuit, this library defining a first cell including a first MOS transistor of minimum dimensions, and a second cell including a second MOS transistor of lower leakage current, wherein the second cell takes up the same surface area as... Agent: Stmicroelectronics (crolles 2) Sas

20110298012 - Semiconductor integrated circuit: A semiconductor integrated circuit according to one aspect of the present invention may includes a plurality of driving circuits to drive a respective plurality of word lines with either a first voltage supplied from a first power supply or a second voltage supplied from a second power supply in accordance... Agent: Renesas Electronics Corporation

20110298011 - Semiconductor memory device and system having stacked semiconductor layers: Example embodiments relate to a semiconductor memory device and a system in which a plurality of semiconductor layers are stacked on each other. A 3-dimensional (3D) semiconductor memory device may include a plurality of semiconductor layers that are stacked on each other. The plurality of semiconductor layers may have the... Agent: Samsung Electronics Co., Ltd.

20110298013 - Vertical structure semiconductor memory devices and methods of manufacturing the same: A semiconductor memory device includes: a semiconductor region extending vertically from a first region of a substrate; a plurality of gate electrodes disposed on the first region of the substrate in a vertical direction, but separated from each other along a sidewall of the semiconductor region; a gate dielectric layer... Agent: Samsung Electronics Co., Ltd.

20110298014 - Cross-point memory structures: Some embodiments include cross-point memory structures. The structures may include a line of first electrode material extending along a first horizontal direction, a multi-sided container of access device materials over the first electrode material, a memory element material within the multi-sided container, and a line of second electrode material over... Agent: Micron Technology, Inc.

20110298015 - Sensing device: A sensing device includes: a semiconductor layer of a field effect semiconductor having upper and lower surfaces; a conductive layer formed on the lower surface of the semiconductor layer; and a sensor layer of an insulator formed on the upper surface of the semiconductor layer. The insulator is made from... Agent:

20110298016 - Mosfet having a jfet embedded as a body diode: A field effect transistor, in accordance with one embodiment, includes a metal-oxide-semiconductor field effect transistor (MOSFET) having a junction field effect transistor (JFET) embedded as a body diode.... Agent: Power Integrations, Inc.

20110298019 - Compact field effect transistor with counter-electrode and fabrication method: An etching mask, comprising the delineation pattern of the gate electrode, of a source contact, a drain contact and a counter-electrode contact, is formed on a substrate of semi-conductor on insulator type. The substrate is covered by a layer of dielectric material and a gate material. The counter-electrode contact is... Agent: Commissariat A L'energie Atomique Et Aux Energies Alternatives

20110298017 - Replacement gate mosfet with self-aligned diffusion contact: A replacement gate field effect transistor includes at least one self-aligned contact that overlies a portion of a dielectric gate cap. A replacement gate stack is formed in a cavity formed by removal of a disposable gate stack. The replacement gate stack is subsequently recessed, and a dielectric gate cap... Agent: International Business Machines Corporation

20110298020 - Semiconductor device: A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.... Agent:

20110298021 - Semiconductor device and method for manufacturing the same: A method for manufacturing a semiconductor device, includes: forming an insulating film containing silicon, oxygen and carbon on at least one of a first substrate and a second substrate; and bonding the first substrate and the second substrate together, with the insulating film interposed therebetween. There can be provided a... Agent: Nec Corporation

20110298018 - Transistor and manufacturing method of the same: The invention provides a transistor, including: a substrate having a channel region; a source region and a drain region on two ends of the channel region of the substrate respectively; a gate high-K dielectric layer on a top surface of the substrate above the channel region between the source region... Agent: Institute Of Microelectronics, Chinese Academy Of Sciences

20110298022 - Manufacturing method for solid-state image pickup device, solid-state image pickup device and image pickup apparatus: A solid-state image pickup device and method for manufacturing the same. The solid-state image pickup device includes a substrate, a first charge accumulation region formed within the substrate, a first impurity region formed within the substrate and located above the charge accumulation region, and a gate electrode disposed on a... Agent: Sony Corporation

20110298023 - Solid-state imaging device: According to the embodiments, a solid-state imaging device is provided, which includes a first electrode film, a first photoelectric conversion film, a first conductive film, a dielectric film, a second photoelectric conversion film, and a second conductive film. The first photoelectric conversion film covers the surface and the side of... Agent: Kabushiki Kaisha Toshiba

20110298024 - Solid-state imaging device and method for manufacturing thereof as well as driving method of solid-state imaging device: A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving... Agent: Sony Corporation

20110298025 - Finfet-compatible metal-insulator-metal capacitor: At least one semiconductor fin for a capacitor is formed concurrently with other semiconductor fins for field effect transistors. A lower conductive layer is deposited and lithographically patterned to form a lower conductive plate located on the at least one semiconductor fin. A dielectric layer and at least one upper... Agent: International Business Machines Corporation

20110298026 - Logic-based edram using local interconnects to reduce impact of extension contact parasitics: An electronic device includes an active layer located over a substrate with the active layer having a logic circuit and an eDRAM cell. The electronic device also includes a first metallization level located over the active layer that provides logic interconnects and metal capacitor plates. The logic interconnects are connected... Agent: Lsi Corporation

20110298027 - Semiconductor device: It is an object to provide a semiconductor device with a novel structure in which stored data can be held even when power is not supplied and there is no limitation on the number of writings. A semiconductor device includes a second transistor and a capacitor provided over a first... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110298028 - Hafnium tantalum titanium oxide films: Embodiments of a dielectric layer containing a hafnium tantalum titanium oxide film structured as one or more monolayers include the dielectric layer disposed in an integrated circuit. Embodiments of methods of fabricating such a dielectric layer provide a dielectric layer for use in a variety of electronic devices. An embodiment... Agent:

20110298029 - Semiconductor storage device: In a 4F2 memory cell designed using an SGT as a vertical transistor, a bit line has a high resistance because it is comprised of a diffusion layer underneath a pillar-shaped silicon layer, which causes a problem of slowdown in memory operation speed. The present invention provides a semiconductor storage... Agent: Unisantis Electronics (japan) Ltd.

20110298030 - Semiconductor storage device: In a 4F2 memory cell designed using an SGT as a vertical transistor, a bit line has a high resistance because it is comprised of a diffusion layer underneath a pillar-shaped silicon layer, which causes a problem of slowdown in memory operation speed. The present invention provides a semiconductor storage... Agent: Unisantis Electronics (japan) Ltd.

20110298031 - Semiconductor memory device including multi-layer gate structure: A semiconductor memory device includes a first select transistor, first stepped portion, and a first contact plug. The first select transistor is formed on a side of an upper surface of a substrate and has a first multi-layer gate. The first stepped portion is formed by etching the substrate adjacent... Agent:

20110298032 - Array architecture for embedded flash memory devices: A method for manufacturing Flash memory devices includes forming a well region in a substrate, depositing a gate dielectric layer overlying the well region, and depositing a first polysilicon layer overlying the gate dielectric layer. The method also includes depositing a dielectric layer overlying the first polysilicon layer and depositing... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20110298034 - Memory cell: A non-volatile memory cell (200) comprising a floating gate transistor (206) comprising a floating gate (10) positioned between a control gate (14) and a first channel region (232) and an access gate transistor (208) comprising an access gate (22) and a second channel region (234), the first channel region (232)... Agent: Nxp B.v.

20110298035 - Memory device transistors: Method and device embodiments are described for fabricating MOSFET transistors in a semiconductor also containing non-volatile floating gate transistors. MOSFET transistor gate dielectric smiling, or bird's beaks, are adjustable by re-oxidation processing. An additional re-oxidation process is performed by opening a poly-silicon layer prior to forming an inter-poly oxide dielectric... Agent:

20110298033 - Semiconductor storage device: According to one embodiment, a semiconductor storage device includes a charge storage layer, a control gate. The charge storage layer is formed above a semiconductor substrate with first insulating film disposed therebetween. The control gate is formed above the charge storage layer with second insulating film disposed therebetween. The control... Agent:

20110298036 - Isolation layer structure, method of forming the same and method of manufacturing a semiconductor device including the same: An isolation layer structure includes first to fourth oxide layer patterns. The first and third oxide layer patterns are sequentially formed in a first trench defined by a first recessed top surface of a substrate and sidewalls of gate structures on the substrate in a first region. The first trench... Agent: Samsung Electronics Co., Ltd.

20110298039 - Nonvolatile semiconductor memory device provided with charge storage layer in memory cell: A nonvolatile semiconductor memory device includes a semiconductor substrate, a first insulation layer formed on the semiconductor substrate, a charge storage layer formed on the first insulation layer, a second insulation layer formed on the charge storage layer, and a control electrode formed on the second insulation layer. The second... Agent: Kabushiki Kaisha Toshiba

20110298038 - Three dimensional semiconductor device: Provided are a three-dimensional semiconductor memory device and manufacturing method of the three-dimensional semiconductor memory device. The three-dimensional semiconductor memory device may include a gate structure on a substrate with the gate structure including a plurality of gate electrodes. Conductive lines are disposed between the gate structure and the substrate.... Agent: Samsung Electronics Co., Ltd.

20110298037 - Vertical structure nonvolatile memory devices: A vertical structure nonvolatile memory device can include a channel layer that extends in a vertical direction on a substrate. A memory cell string includes a plurality of transistors that are disposed on the substrate in the vertical direction along a vertical sidewall of the channel layer. At least one... Agent: Samsung Electronics Co., Ltd.

20110298040 - Semiconductor device and method of manufacturing the same: A semiconductor device and a method of manufacturing the same are disclosed. By forming a boron nitride film as a sealing film of a buried gate of a cell region from being oxidized, it is possible to improve refresh characteristics, to reduce the number of processes, and to reduce parasitic... Agent: Hynix Semiconductor Inc.

20110298042 - Power semiconductor device with trench bottom polysilicon and fabrication method thereof: A power semiconductor device comprising a base, a trench, a heavily doped polysilicon structure, a polysilicon gate, a gate dielectric layer, and a heavily doped region is provided. The trench is formed in the base. The heavily doped polysilicon structure is formed in the lower portion of the trench. At... Agent: Great Power Semiconductor Corp.

20110298044 - Semiconductor device and method of manufacturing semiconductor device: The semiconductor device according to the present invention includes a semiconductor layer, a trench formed by digging the semiconductor layer from the surface thereof, a gate insulating film formed on the inner surface of the trench, and a gate electrode made of silicon embedded in the trench through the gate... Agent:

20110298043 - Semiconductor device structures and related processes: Improved highly reliable power RFP structures and fabrication and operation processes. The structure includes plurality of localized dopant concentrated zones beneath the trenches of RFPs, either floating or extending and merging with the body layer of the MOSFET or connecting with the source layer through a region of vertical doped... Agent: Maxpower Semiconductor, Inc.

20110298041 - Single-gate finfet and fabrication method thereof: A single-gate FinFET structure includes an active fin structure having two enlarged head portions and two respective tapered neck portions that connect the enlarged head portions with an underlying ultra-thin body. Two source/drain regions are doped in the two enlarged head portions respectively. An insulation region is interposed between the... Agent:

20110298045 - Self-aligned contact for trench mosfet: The process methods and structures mentioned above for creating a trench MOSFET enables self-aligned contacts to be formed to allow decreasing pitch size for trench MOSFET. The self-aligned contacts are formed by etching exposed silicon areas without using lithographical mask and alignment. As a result, the allowance for alignment can... Agent:

20110298046 - Semiconductor device with buried bit lines and method for fabricating the same: A semiconductor device includes active regions separated by a trench, a separation layer dividing the trench, and buried bit lines buried in the trench with the separation layer interposed between the buried bit lines.... Agent:

20110298047 - Three-dimensional semiconductor device structures and methods: A three-dimensional semiconductor device includes a first semiconductor device, a second semiconductor device, and a patterned conductive layer disposed between the first and the second semiconductor devices. The first semiconductor device has a first plurality of terminals on a front side of the first semiconductor device and a first metal... Agent:

20110298048 - Semiconductor device: The present teaching provides a semiconductor device capable of relaxing stress transferred to a contact region during wire bonding and improving reliability of wire bonding. A semiconductor device comprises contact regions, an interlayer insulating film, an emitter electrode, and a stress relaxation portion. The contact regions are provided at a... Agent: Toyota Jidosha Kabushiki Kaisha

20110298049 - Cmos device with raised source and drain regions: A semiconductor structure includes a semiconductor substrate comprising a PMOS region and an NMOS region; a PMOS device in the PMOS region; and an NMOS device in the NMOS region. The PMOS device includes a first gate stack on the semiconductor substrate; a first offset spacer on a sidewall of... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110298050 - Fin transistor structure and method of fabricating the same: There is provided a fin transistor structure and a method of fabricating the same. The fin transistor structure comprises a fin formed on a semiconductor substrate, wherein a bulk semiconductor material is formed between a portion of the fin serving as the channel region of the transistor structure and the... Agent: Institute Of Microelectronics, Chinese Academy Of Sciences

20110298051 - Electrostatic discharge management apparatus, systems, and methods: Apparatus, systems, and methods may include managing electrostatic discharge events by using a semiconductor device having a non-aligned gate to implement a snap-back voltage protection mechanism. Such devices may be formed by doping a semiconductor substrate to form a first conductive region as a well, forming one of a source... Agent: Synopsys, Inc.

20110298053 - Manufacturing method of gate stack and semiconductor device: A manufacturing method of a gate stack with sacrificial oxygen-scavenging metal spacers includes: forming a gate stack structure consisting of an interfacial oxide layer, a high-K dielectric layer and a metal gate electrode, on a semiconductor substrate; conformally depositing a metal layer covering the semiconductor substrate and the gate stack... Agent: Institute Of Microelectronics, Chinese Academy Of Sciences

20110298052 - Vertical stacking of field effect transistor structures for logic gates: A vertical structure is formed upon a semiconductor substrate. The vertical structure comprises four dielectric layers parallel to a top surface of the semiconductor substrate and three conducting layers, one conducting layer between each vertically adjacent dielectric layer. A first FET (field effect transistor) and a third FET are arranged... Agent: International Business Machines Corporation

20110298054 - One-time programmable memory: The present invention provides a programmable memory array including a plurality of memory cells. At least one and preferably each memory cell of the plurality of memory cells include an isolation layer formed of a dielectric material, a field effect transistor, and a programmable element. The programmable element includes a... Agent:

20110298055 - Semiconductor device and manufacturing method for the same: In a semiconductor substrate on which are formed an N-type MOS transistor and a P-type MOS transistor, the gate electrode of the N-type MOS transistor comprises a tungsten film, which makes contact with a gate insulation film, and the gate electrode of the P-type MOS transistor comprises a tungsten film,... Agent: Kabushiki Kaisha Toshiba

20110298056 - Contact resistivity reduction in transistor devices by deep level impurity formation: A method of forming a low resistance contact structure in a semiconductor device includes forming a doped semiconductor region in a semiconductor substrate; forming a deep level impurity region at an upper portion of the doped semiconductor region; activating dopants in both the doped semiconductor region and the deep level... Agent: International Business Machines Corporation

20110298057 - Semiconductor device: An object is to provide a semiconductor device having a novel structure with a high degree of integration. A semiconductor device includes a semiconductor layer having a channel formation region, a source electrode and a drain electrode electrically connected to the channel formation region, a gate electrode overlapping with the... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110298058 - Faceted epi shape and half-wrap around silicide in s/d merged finfet: FinFETs and methods of making. FinFETs are provided. The FinFET contains two or more fins over a semiconductor substrate; two or more epitaxial layers over side surfaces of the fins; and metal-semiconductor compounds over an upper surfaces of the epitaxial layers. The fin has side surfaces that are substantially vertical... Agent: Toshiba America Electronic Components, Inc.

20110298059 - Integrated circuits having dummy gate electrodes and methods of forming the same: An integrated circuit includes at least one first gate electrode of at least one active transistor. At least one first dummy gate electrode is disposed adjacent to a first side edge of the at least one first gate electrode. At least one second dummy gate electrode is disposed adjacent to... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110298060 - Interface structure for channel mobility improvement in high-k metal gate stack: A gate stack structure for field effect transistor (FET) devices includes a nitrogen rich first dielectric layer formed over a semiconductor substrate surface; a nitrogen deficient, oxygen rich second dielectric layer formed on the nitrogen rich first dielectric layer, the first and second dielectric layers forming, in combination, a bi-layer... Agent: International Business Machines Corporation

20110298062 - Metal gate structures and methods for forming thereof: Metal gate structures and methods for forming thereof are provided herein. In some embodiments, a method for forming a metal gate structure on a substrate having a feature formed in a high k dielectric layer may include depositing a first layer within the feature atop the dielectric layer; depositing a... Agent: Applied Materials, Inc.

20110298061 - Structure and method for replacement gate mosfet with self-aligned contact using sacrificial mandrel dielectric: The present disclosure provides a method for forming a semiconductor device that includes forming a replacement gate structure overlying a channel region of a substrate. A mandrel dielectric layer is formed overlying source and drain regions of the substrate. The replacement gate structure is removed to provide an opening exposing... Agent: International Business Machines Corporation

20110298065 - Electromechanical system having a controlled atmosphere, and method of fabricating same: There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a technique of fabricating or manufacturing MEMS having mechanical structures that operate in controlled or predetermined mechanical damping environments. In this regard, the present invention encapsulates the mechanical structures within a chamber, prior... Agent:

20110298063 - Micromechanical component: A method is described for manufacturing a micromechanical component. The method includes providing a first substrate, forming a first connecting structure on the first substrate, and forming a microstructure on the first substrate after forming the first connecting structure. The microstructure has at least one movable functional element. The method... Agent:

20110298064 - Sensor module and method for producing sensor modules: Sensor module, comprising a carrier, at least one sensor chip and at least one evaluation chip which is electrically coupled to the sensor chip. The carrier has a cutout, in which the sensor chip is at least partly situated. The evaluation chip is arranged on the carrier and at least... Agent: Epcos Ag

20110298066 - Micro structure, micro electro mechanical system therewith, and manufacturing method thereof: A micro structure includes a base member; a supporting unit disposed on a surface of the base member; a graphene unit which covers at least a portion of the supporting unit and at least a portion of an empty space adjacent to the supporting unit; and a structure unit disposed... Agent: Samsung Techwin Co., Ltd.

20110298067 - Magnetic memory element and magnetic memory: A magnetoresistive effect element includes: a magnetization free layer; a non-magnetic insertion layer provided adjacent to the magnetization free layer; a magnetic insertion layer provided adjacent to the non-magnetic insertion layer and opposite to the magnetization free layer with respect to the non-magnetic insertion layer; a spacer layer provided adjacent... Agent: Nec Corporation

20110298069 - Magnetic random access memory with dual spin torque reference layers: A magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic cell includes first and second fixed magnetic layers and a free magnetic layer positioned between the fixed magnetic layers. The magnetic cell also includes terminals configured for providing a spin-polarized current through the magnetic... Agent: Seagate Technology LLC

20110298068 - Magnetic tunnel junction with compensation element: A magnetic tunnel junction having a compsensation element is disclosed. The magnetic tunnel junction includes a reference element, and a compensation element having an opposite magnetization moment to a magnetization moment of the reference element. A free magnetic layer is between the reference element and the compensation element, and an... Agent: Seagate Technology LLC.

20110298070 - Semiconductor device having magnetoresistive element and manufacturing method thereof: A semiconductor device has a magnetoresistive element, a bit line over the magnetoresistive element, and a yoke cover over the bit line. To form the yoke cover, a laminate film is first formed over the bit line, the laminate film having a first barrier metal layer, a magnetic layer, and... Agent: Renesas Electronics Corporation

20110298071 - High power density betavoltaic battery: To increase total power in a betavoltaic device, it is desirable to have greater radioisotope material and/or semiconductor surface area, rather than greater radioisotope material volume. An example of this invention is a high power density betavoltaic battery. In one example of this invention, tritium is used as a fuel... Agent:

20110298073 - Image sensor devices and methods for manufacturing the same: Disclosed is a method for forming an image sensor device. First, a lens is provided, and a first sacrificial element is then formed on the lens. Subsequently, an electromagnetic interference layer is formed on the lens and the first sacrificial element, and the first sacrificial element and the electromagnetic interference... Agent: Visera Technologies Company Limited

20110298075 - Lens unit, aligning method, image pickup device and method for manufacturing image pickup device: Provided is a lens unit (3) wherein a plurality of wafer lenses (10, 20) are layered and covered by cover package (30). In each of wafer lenses (10, 20), resin molded sections (14, 16, 24, 26) are formed on a glass substrate (12, 22), and a lens section (14a, 16a,... Agent:

20110298076 - Photodiode and photodiode array: A p− type semiconductor substrate 20 has a first principal surface 20a and a second principal surface 20b opposed to each other and includes a photosensitive region 21. The photosensitive region 21 is composed of an n+ type impurity region 23, a p+ type impurity region 25, and a region... Agent: Hamamatsu Photonics K.k.

20110298072 - Ridge structure for back side illuminated image sensor: Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor includes first and second radiation-detection devices that are disposed in the substrate. The first and second radiation-detection devices are operable to detect radiation waves that enter... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110298074 - Solid-state imaging element and electronic information device: A solid-state imaging element according to the present invention includes a plurality of light receiving sections formed in a pixel array, each light receiving section constituted of a semiconductor element for performing a photoelectric conversion on and capturing an image of image light from a subject, the solid-state imaging element... Agent: Sharp Kabushiki Kaisha

20110298077 - Methods of fabrication of package assemblies for optically interactive electronic devices and package assemblies therefor: Packaging assemblies for optically interactive devices and methods of forming the packaging assemblies in an efficient manner that eliminates or reduces the occurrence of process contaminants. In a first embodiment, a transparent cover is attached to a wafer of semiconductor material containing a plurality of optically interactive devices. The wafer... Agent: Round Rock Research, LLC

20110298078 - Method for production of solid-state imaging element, solid-state imaging element, and imaging apparatus: Disclosed herein is a method for producing a solid-state imaging element which has pixels, each including a sensor section that performs photoelectric conversion and a charge transfer section that transfers charges generated by the sensor section. The method includes: forming an impurity region of the first conduction type and a... Agent: Sony Corporation

20110298079 - Semiconductor element and solid-state imaging device: A semiconductor element includes: a p-type semiconductor region; an n-type light-receiving surface buried region buried in the semiconductor region; an n-type charge accumulation region buried in the semiconductor region, continuously to the light-receiving surface buried region, establishing a deeper potential well depth than the light-receiving surface buried region; a charge... Agent: National University Corporation Shizuoka Univ.

20110298080 - Method for manufacturing thermoelectric conversion module, and thermoelectric conversion module: There is provided a method for manufacturing a thermoelectric conversion module that can yield a thermoelectric conversion module with a high insulating property and high density without requiring positioning of the thermoelectric conversion elements, as well as a thermoelectric conversion module manufactured by the method. The method for manufacturing a... Agent: Sumitomo Chemical Company, Limited

20110298081 - Semiconductor device: A semiconductor device includes a semiconductor substrate, a surface electrode formed on the semiconductor substrate, an ineffective region formed to surround the surface electrode, and an ID-indicating portion made of a different material than the surface electrode and formed on the surface electrode to indicate an ID. The area of... Agent: Mitsubishi Electric Corporation

20110298082 - Semiconductor integrated circuit and method of driving the same: A transistor causes fluctuation in the threshold and mobility due to the factor such as fluctuation of the gate length, the gate width, and the gate insulating film thickness generated by the difference of the manufacturing steps and the substrate to be used. As a result, there is caused fluctuation... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110298083 - Soi wafer, method for producing same, and method for manufacturing semiconductor device: An SOI wafer including: a supporting substrate 1; a BOX layer 2 provided above the supporting substrate 1, the BOX layer 2 being formed by a thermal oxidization; a gettering layer 3 provided immediately on the BOX layer 2 and mainly composed of a silicon which contains one or more... Agent: Panasonic Corporation

20110298084 - Method for manufacturing semiconductor element: A method for manufacturing a semiconductor element of the present invention, has: a laser irradiation step of focusing a pulsed laser beam inside of a substrate constituting a wafer, thereby forming a plurality of isolated processed portions along an intended dividing line inside of the substrate, and creating a fissure... Agent: Nichia Corporation

20110298085 - Shallow trench isolation area having buried capacitor: A semiconductor chip includes a substrate including a surface, an active transistor region and a substrate contact region formed on the substrate, a shallow trench isolation (STI) area formed in the surface and disposed at least partially between the active transistor region and the substrate contact region, and at least... Agent: Infineon Technologies Ag

20110298087 - Electrical fuse device based on a phase-change memory element and corresponding programming method: A fuse device has a fuse element provided with a first terminal and a second terminal and an electrically breakable region, which is arranged between the first terminal and the second terminal and is configured to undergo breaking as a result of the supply of a programming electrical quantity, thus... Agent: Stmicroelectronics S.r.l.

20110298086 - Fuse structures, e-fuses comprising fuse structures, and semiconductor devices comprising e-fuses: A fuse structure, an e-fuse including the fuse structure and a semiconductor device including the e-fuse are disclosed. The fuse structure includes first and second electrodes extending in a first direction, and spaced a predetermined distance apart from each other and having one ends thereof facing each other, an insulation... Agent:

20110298088 - Semiconductor package with integrated inductor: A semiconductor package includes a semiconductor chip. An inductor is applied to the semiconductor chip. The inductor has at least one winding. An encapsulation body is formed of an encapsulation material. The encapsulation material contains a magnetic component and fills a space within the winding to form a magnetic winding... Agent:

20110298090 - Capacitors, systems, and methods: Capacitors, systems, and methods are disclosed. In one embodiment, the capacitor includes a first electrode. The capacitor may also include a first insulator layer having a positive VCC adjacent to the first electrode. The capacitor may further include a second insulator layer having a negative VCC adjacent to the first... Agent: Sematech, Inc.

20110298091 - Semiconductor device having capacitors: A capacitor is formed over a semiconductor substrate. The capacitor includes a lower electrode, a capacitor dielectric film and an upper electrode in this order recited, and has an area S equal to or larger than 1000 μm2 and L/S equal to or larger than 0.4 μm−1, where S is... Agent: Fujitsu Semiconductor Limited

20110298089 - Trench capacitor and method of fabrication: An improved trench capacitor and method of fabrication are disclosed. The trench capacitor utilizes a rare-earth oxide layer to reduce depletion effects, thereby improving performance of the trench capacitor.... Agent: International Business Machines Corporation

20110298092 - Diodes with a dog bone or cap-shaped junction profile to enhance esd performance, and other substructures, integrated circuits and processes of manufacture and testing: An integrated circuit structure includes a semiconductor doped area (NWell) having a first conductivity type, and a layer (PSD) that overlies a portion of said doped area (NWell) and has a doping of an opposite second type of conductivity that is opposite from the first conductivity type of said doped... Agent: Texas Instruments Incorporated

20110298094 - Epitaxial wafer and method of producing the same: An epitaxial wafer comprises a silicon substrate, a gettering epitaxial film formed thereon and containing silicon and carbon, and a main silicon epitaxial film formed on the gettering epitaxial film, in which the gettering epitaxial film has a given carbon atom concentration and carbon atoms are existent between its silicon... Agent: Sumco Corporation

20110298093 - Thermal processing of substrates with pre- and post-spike temperature control: Provided are apparatuses and method for the thermal processing of a substrate surface, e.g., controlled laser thermal annealing (LTA) of substrates. The invention typically involves irradiating the substrate surface with first and second images to process regions of the substrate surface at a substantially uniform peak processing temperature along a... Agent: Ultratech, Inc.

20110298095 - Passivation layer extension to chip edge: Embodiments of the invention provide a semiconductor chip having a passivation layer extending along a surface of a semiconductor substrate to an edge of the semiconductor substrate, and methods for their formation. One aspect of the invention provides a semiconductor chip comprising: a semiconductor substrate; a passivation layer including a... Agent: International Business Machines Corporation

20110298096 - Semiconductor chip: A semiconductor wafer 10 has a plurality of semiconductor chip areas 10a and a scribe area 10b, each of the semiconductor chip areas 10a having semiconductor elements and electrode pads (electrode portions) 16a electrically connected to the respective semiconductor elements, the scribe area 10b having monitor elements and electrode pads... Agent: Panasonic Corporation

20110298097 - Semiconductor device and method for manufacturing the same: A semiconductor device is provided wherein stacked semiconductor substrates are electrically coupled together in a satisfactory state by a conductor buried in the interior of a through hole. A first semiconductor substrate includes a substrate having main surfaces, further includes a semiconductor element formed within and over the substrate, a... Agent: Renesas Electronics Corporation

20110298098 - Expitaxial fabrication of fins for finfet devices: A fin for a finFET is described. The fin is a portion of a layer of material, where, another portion of the layer of material resides on a sidewall.... Agent:

20110298099 - Silicon dioxide layer deposited with bdeas: A silicon dioxide layer is deposited onto a substrate using a process gas comprising BDEAS and an oxygen-containing gas such as ozone. The silicon dioxide layer can be part of an etch-resistant stack that includes a resist layer. In another version, the silicon dioxide layer is deposited into through holes... Agent: Applied Materials, Inc.

20110298100 - Semiconductor device producing method and semiconductor device: Disclosed are a semiconductor device producing method and a semiconductor device. The semiconductor device producing method is comprised of a step of forming a diffusion suppressing mask composed of at least two of a thick film portion, an opening portion, and a thin film portion, on a surface of a... Agent:

20110298106 - Integrated circuit packaging system with magnetic film and method of manufacture thereof: An integrated circuit packaging system including: connecting a first integrated circuit device and a package substrate; attaching a support bump to the package substrate; providing a second integrated circuit device having an inner encapsulation; applying a magnetic film on the inner encapsulation of the second integrated circuit device; and mounting... Agent:

20110298108 - Non-leaded integrated circuit package system with multiple ground sites: A non-leaded integrated circuit package system includes: a die paddle of a lead frame; a dual row of terminals including an outer terminal and an inner terminal; and an inner terminal and an adjacent inner terminal to form a fused lead.... Agent:

20110298104 - Semiconductor body with a protective structure and method for manufacturing the same: A semiconductor body comprises a protective structure. The protective structure (10) comprises a first and a second region (11, 12) which have a first conductivity type and a third region (13) that has a second conductivity type. The second conductivity type is opposite the first conductivity type. The first and... Agent: Austriamicrosystems Ag

20110298101 - Semiconductor device and method of forming emi shielding layer with conductive material around semiconductor die: A semiconductor device has a plurality of first semiconductor die mounted over an interface layer formed over a temporary carrier. An encapsulant is deposited over the first die and carrier. A flat shielding layer is formed over the encapsulant. A channel is formed through the shielding layer and encapsulant down... Agent: Stats Chippac, Ltd.

20110298105 - Semiconductor device and method of forming shielding layer after encapsulation and grounded through interconnect structure: A method of manufacturing a semiconductor device includes providing a substrate having a conductive bump formed over the substrate and a semiconductor die with an active surface oriented to the substrate. An encapsulant is deposited over the semiconductor die and the conductive bump, and the encapsulant is planarized to expose... Agent: Stats Chippac, Ltd.

20110298102 - Semiconductor package and method of manufacturing the semiconductor package: A semiconductor package and a method of manufacturing the semiconductor package are disclosed. A semiconductor package in accordance with an embodiment of the present invention includes a substrate, which is formed with a ground circuit and mounted with a semiconductor chip on one surface, a conductive ground layer, which is... Agent: Samsung Electro-mechanics Co., Ltd.

20110298103 - Semiconductor package and method of manufacturing the semiconductor package: A semiconductor package and a method of manufacturing the semiconductor package are disclosed. A semiconductor package in accordance with an embodiment of the present invention includes a substrate, which has a ground circuit formed thereon, a semiconductor chip, which is mounted on the substrate, a conductive first shield, which is... Agent: Samsung Electro-mechanics Co., Ltd.

20110298107 - Shielded stacked integrated circuit packaging system and method of manufacture thereof: A method of manufacture of a shielded stacked integrated circuit packaging system includes: forming a first integrated circuit structure having a first substrate and a first integrated circuit die; mounting a shield over the first substrate and the first integrated circuit die; mounting a second integrated circuit structure having a... Agent:

20110298109 - Semiconductor device and method of forming prefabricated emi shielding frame with cavities containing penetrable material over semiconductor die: A semiconductor device has a plurality of semiconductor die mounted to a temporary carrier. A prefabricated shielding frame has a plate and integrated bodies extending from the plate. The bodies define a plurality of cavities in the shielding frame. A penetrable material is deposited in the cavities of the shielding... Agent: Stats Chippac, Ltd.

20110298110 - Semiconductor device and method of forming thermally conductive layer between semiconductor die and build-up interconnect structure: A semiconductor device has a thermally conductive layer with a plurality of openings formed over a temporary carrier. The thermally conductive layer includes electrically non-conductive material. A semiconductor die has a plurality of bumps formed over contact pads on the die. The semiconductor die is mounted over the thermally conductive... Agent: Stats Chippac, Ltd.

20110298111 - Semiconductor package and manufactring method thereof: There is provided a semiconductor package capable of protecting a passive element, a semiconductor chip, or the like included in the package from external force and having enhanced Electro Magnetic Interference (EMI) and Electro Magnetic Susceptibility (EMS) characteristics and a manufacturing method thereof. The semiconductor package includes a substrate having... Agent: Samsung Electro-mechanics Co., Ltd.

20110298113 - Integrated circuit packaging system with increased connectivity and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: forming a lead frame having contact pads and connection leads; coupling a base integrated circuit to the contact pads; coupling a chip interconnect between the base integrated circuit, the connection leads, the contact pads, or a combination thereof; molding... Agent:

20110298112 - Semiconductor module and semiconductor device: A semiconductor module includes a semiconductor chip, a semiconductor frame, a circuit board, and a screw. The semiconductor frame has a main surface having a concave portion in which the semiconductor chip is mounted. The semiconductor frame is thermally and electrically connected with the semiconductor chip through a die bonding... Agent: Miyoshi Electronics Corporation

20110298117 - Pad configurations for an electronic package assembly: Embodiments of the present disclosure provide an electronic package assembly comprising a solder mask layer, the solder mask layer having at least one opening, and a plurality of pads coupled to the solder mask layer, wherein at least one pad of the plurality of pads includes (i) a first side,... Agent:

20110298115 - Semiconductor component and method of manufacture: A semiconductor component and a method for manufacturing the semiconductor component, wherein the semiconductor component is configured to permit the determination of circuit parameters. A high side FET has a gate terminal coupled to an output terminal of a high side gate drive circuit, a drain terminal coupled for receiving... Agent:

20110298118 - Semiconductor device: A semiconductor device, including: a substrate having an upper face on which a first ground pad, a first power supply pad, a first signal pad, and a second signal pad are formed; a first substrate formed on the substrate and having an upper face on which a third signal pad... Agent: Panasonic Corporation

20110298116 - Semiconductor device and production method thereof: An object of the present invention is to improve the quality control of a semiconductor device. By forming an inscription comprising a culled or pixel skipping pattern of dimples on the upper surface of a die pad in a QFN, it is possible to confirm the inscription by X-ray inspection... Agent: Renesas Electronics Corporation

20110298114 - Stacked interposer leadframes: A stacked leadframe assembly is disclosed. The stacked leadframe assembly includes a first die having a surface that defines a mounting plane, a first leadframe stacked over and attached to the first die, a second die stacked over and attached to the first leadframe; and a second leadframe stacked over... Agent:

20110298119 - Integrated circuit package system with package stacking and method of manufacture thereof: A method of manufacture of an integrated circuit package system includes: forming a non-inverted internal stacking module including: fabricating an internal stacking module (ISM) substrate having an ISM component side and an ISM coupling side, coupling an internal stacking module integrated circuit to the ISM component side, coupling stacking structures,... Agent:

20110298120 - Apparatus for thermally enhanced semiconductor package: A semiconductor package includes a semiconductor die having contact pads. An encapsulant is disposed around the semiconductor die, and conductive vias are disposed in the encapsulant. Electrically conductive traces are disposed between the contact pads and conductive vias, a thermally conductive channel is disposed in the encapsulant separate from the... Agent: Stats Chippac, Ltd.

20110298121 - Power semiconductor device: A power semiconductor device according to the present invention includes a heat sink made of Cu and having a thickness of 2 to 3 mm, an insulating substrate bonded on the heat sink with interposition of a first bonding layer (under-substrate solder), and a power semiconductor element mounted on the... Agent: Mitsubishi Electric Corporation

20110298122 - Integrated circuit apparatus, systems, and methods: High density circuit modules are formed by stacking integrated circuit (IC) chips one above another. Unused input/output (I/O) locations on some of the chips can be used to connect other I/O locations, resulting in decreased impedance between the chips. Additional apparatus, systems, and methods are disclosed.... Agent:

20110298123 - Cu pillar bump with non-metal sidewall spacer and metal top cap: A bump has a non-metal sidewall spacer on a lower sidewall portion of Cu pillar, and a metal top cap on a top surface and an upper sidewall portion of the Cu pillar. The metal top cap is formed by an electroless or immersion plating technique after the non-metal sidewall... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110298124 - Semiconductor structure: A semiconductor structure is provided. By using a composite bump with replace of a gold bump, the consumption of gold can be reduced and the manufacturing cost can be decreased accordingly. Moreover, by using an encapsulation material formed on a metal layer, the heat transferring efficiency of the semiconductor structure... Agent: Chipmos Technologies Inc.

20110298126 - Carrier-free semiconductor package and fabrication method: A method for fabricating a carrier-free semiconductor package includes: half-etching a metal carrier to form a plurality of recess grooves and a plurality of metal studs each serving in position as a solder pad or a die pad; filing each of the recess grooves with a first encapsulant; forming on... Agent: Siliconware Precision Industries Co., Ltd.

20110298125 - Integrated circuit packaging system with multipart conductive pillars and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing a pillar ball; mounting an interposer having a first functional side and a second functional side over the pillar ball and a semiconductor chip; encapsulating the interposer, the pillar ball, and the semiconductor chip with an encapsulation; forming... Agent:

20110298128 - Multi-chip package with pillar connection: A semiconductor device has a substrate having a first plurality of substrate bonding pads disposed on a bonding surface thereof. A plurality of semiconductor dice is disposed on the substrate. Each die of the plurality of dice has a first plurality of die bonding pads arranged along at least one... Agent: Mosaid Technologies Incorporated

20110298127 - Semiconductor device: A semiconductor device has a semiconductor substrate which has a plurality of pad electrodes provided on a top surface thereof and has an approximately rectangular shape; a rewiring layer which is provided with a plurality of contact wiring lines connected to the plurality of pad electrodes, is disposed on the... Agent: Kabushiki Kaisha Toshiba

20110298130 - Semiconductor devices with through-silicon vias: Through silicon vias (TSVs) include a first metal plug having a cylindrical shape, passing through a semiconductor substrate, and with an outer peripheral surface surrounded by a first insulating film; an isolated semiconductor substrate in the semiconductor substrate and surrounding a first metal plug surrounded by a first insulating film;... Agent: Samsung Electronics Co., Ltd.

20110298129 - Stacked package: A stacked package for an electronic device and a method of manufacturing the stacked package include a first semiconductor package being formed with a first conductive pad and a second conductive pad. A second semiconductor package is formed with a third conductive pad and a fourth conductive pad and is... Agent: Samsung Electronics Co., Ltd.

20110298131 - Yttrium contacts for germanium semiconductor radiation detectors: A germanium semiconductor radiation detector contact made of yttrium metal. A thin (˜1000 Å) deposited layer of yttrium metal forms a thin hole-barrier and/or electron-barrier contact on both p- and n-type germanium semiconductor radiation detectors. Yttrium contacts provide a sufficiently high hole barrier to prevent measurable contact leakage current below... Agent:

20110298132 - Ultra-low power swnt interconnects for sub-threshold circuits: Ultra-low power single metallic single-wall-nano-tube (SWNT) interconnects for sub-threshold circuits are provided. According to some embodiments, an interconnect structure for use in electronic circuits can generally comprise a first substrate, a second substrate, and an interconnect. The first substrate can be spaced apart from the second substrate. The interconnect is... Agent:

20110298133 - Semiconductor device: The reliability of a porous Low-k film is improved. The mean diameter of first pores and second pores in an interlayer insulation film of a second fine layer including a porous Low-k film is set at 1.0 nm or more and less than 1.45 nm. This prevents the formation of... Agent: Renesas Electronics Corporation

20110298134 - Three dimensional interconnect structure and method thereof: A three-dimensional interconnect includes a first substrate bonded to a second substrate, the first substrate including a device layer and a bulk semiconductor layer, a metal pad disposed on the second substrate, an electrically insulating layer disposed between the first and second substrates. The structure has a via-hole extending through... Agent: Research Triangle Institute

20110298135 - Integrated circuit and process for fabricating thereof: A process for fabricating an Integrated Circuit (IC) and the IC formed thereby is disclosed. The process comprises providing a substrate. The process further comprises forming a plurality of longitudinal trenches in the substrate and depositing a layer of a first conductive material on at least one longitudinal trench of... Agent:

20110298136 - Mems integrated chip with cross-area interconnection: The present invention discloses a MEMS (Micro-Electro-Mechanical System) integrated chip with cross-area interconnection, comprising: a substrate; a MEMS device area on the substrate; a microelectronic device area on the substrate; a guard ring separating the MEMS device area and the microelectronic device area; and a conductive layer on the surface... Agent: Pixart Imaging Inc. R.o.c.

20110298137 - Semiconductor device and method of forming sacrificial adhesive over contact pads of semiconductor die: A semiconductor wafer contains a plurality of semiconductor die each having a plurality of contact pads. A sacrificial adhesive is deposited over the contact pads. Alternatively, the sacrificial adhesive is deposited over the carrier. An underfill material can be formed between the contact pads. The semiconductor wafer is singulated to... Agent: Stats Chippac, Ltd.

20110298138 - Standard cell and semiconductor device including the same: This invention prevents a break in a signal wire disposed between wire ends due to attenuation and improves production yields of devices. In a standard cell, a first signal wire extends in a first direction. Second and third signal wires extend in a second direction substantially perpendicular to the first... Agent: Panasonic Corporation

20110298140 - Component having a through-contact: A method for manufacturing a component having a through-contact includes: providing a substrate; forming an insulating layer on the substrate; structuring the insulating layer, the insulating layer being removed at least in a predetermined trenching area surrounding a selected substrate area; performing an etching process in which the structured insulating... Agent:

20110298139 - Semiconductor package: The present invention relates to a semiconductor package. The semiconductor package includes a substrate, a first chip and a second chip. The substrate has a first surface, a second surface and at least one through hole. The first chip is disposed adjacent to the first surface of the substrate. The... Agent:

20110291063 - Semiconductor memory device: According to one embodiment, a semiconductor memory device includes a word line interconnect layer, a bit line interconnect layer and a pillar. The word line interconnect layer includes a plurality of word lines extending in a first direction. The bit line interconnect layer includes a plurality of bit lines extending... Agent: Kabushiki Kaisha Toshiba

20110291066 - Nonvolatile memory devices having cells with oxygen diffusion barrier layers therein and methods of manufacturing the same: A nonvolatile memory cell includes first and second electrodes and a data storage layer extending between the first and second electrodes. An oxygen diffusion barrier layer is provided, which extends between the data storage layer and the first electrode. An oxygen gettering layer is also provided, which extends between the... Agent:

20110291065 - Phase change memory cell structures and methods: Phase change memory cell structures and methods are described herein. A number of methods of forming a phase change memory cell structure include forming a dielectric stack structure on a first electrode, wherein forming the dielectric stack structure includes creating a second region between a first region and a third... Agent: Micron Technology, Inc.

20110291064 - Resistance variable memory cell structures and methods: Resistance variable memory cell structures and methods are described herein. One or more resistance variable memory cell structures include a first electrode common to a first and a second resistance variable memory cell, a first vertically oriented resistance variable material having an arcuate top surface in contact with a second... Agent: Micron Technology, Inc.

20110291067 - Threshold device for a memory array: A threshold device including a plurality of adjacent tunnel barrier layers that are in contact with one another and are made from a plurality of different dielectric materials is disclosed. A memory plug having first and second terminals includes, electrically in series with the first and second terminals, the threshold... Agent: Unity Semiconductor Corporation

20110291068 - Field effect transistor manufacturing method, field effect transistor, and semiconductor graphene oxide manufacturing method: A semiconductor device is provided and includes a conductive substrate, an insulating film formed on the conductive substrate, a base layer including amino groups, and a reduced graphene oxide layer formed on the base layer.... Agent: Sony Corporation

20110291070 - Light emitting device, light emitting device package, and lighting system: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a substrate, a light emitting structure comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, the light emitting structure being disposed on... Agent:

20110291069 - Light-emitting devices and methods of manufacturing the same: Light-emitting devices (LED) and methods of manufacturing the same. A LED includes a first type semiconductor layer, a nano array layer that includes a plurality of nano structures each including a first type semiconductor nano core selectively grown from the first type semiconductor layer, and an active layer and a... Agent: Samsung Electronics Co., Ltd.

20110291071 - Quantum dot light emitting diode device and display device therewith: The present invention relates to a quantum dot light emitting diode device in which a hole transportation layer is formed after forming a quantum dot light emitting layer by a solution process by applying an inverted type quantum dot light emitting diode device for making free selection of a hole... Agent:

20110291073 - Quantum dot phosphor for light emitting diode and method of preparing the same: Disclosed herein is a quantum dot phosphor for light emitting diodes, which includes quantum dots and a solid substrate on which the quantum dots are supported. Also, a method of preparing the quantum dot phosphor is provided. Since the quantum dot phosphor of the current invention is composed of the... Agent: Samsung Electronics Co., Ltd.

20110291072 - Semiconductor dies, light-emitting devices, methods of manufacturing and methods of generating multi-wavelength light: A semiconductor die includes at least one first region and at least one second region. The at least one first region is configured to emit light having at least a first wavelength. The at least one second region is configured to emit light having at least a second wavelength, which... Agent: Samsung Electronics Co., Ltd.

20110291074 - Semi-polar nitride-based light emitting structure and method of forming same: A structure and method for producing same provides a solid-state light emitting device with suppressed lattice defects in epitaxially formed nitride layers over a non-c-plane oriented (e.g., semi-polar) template or substrate. A dielectric layer with “window” openings or trenches provides significant suppression of all diagonally running defects during growth. Posts... Agent: Palo Alto Research Center Incorporated

20110291075 - Field effect transistor, method for manufacturing the same, and biosensor: Disclosed is a carbon nanotube field effect transistor which stably exhibits excellent electrical conduction properties. Also disclosed are a method for manufacturing the carbon nanotube field effect transistor, and a biosensor comprising the carbon nanotube field effect transistor. First of all, an silicon oxide film is formed on a contact... Agent:

20110291076 - Articles containing coatings of amic acid salts: An article includes a flexible or rigid substrate and dry layer comprising an aromatic, non-polymeric amic acid salt that can be thermally converted to a corresponding arylene diimide. Upon conversion of the aromatic, non-polymeric amic acid salt, the dry layer has semiconductive properties and can be used in various devices... Agent:

20110291084 - Display device and backplane: A display device comprises a plurality of electroluminescent display pixels and a plurality of semiconductor elements (“chiplets”), each pixel being electrically connected to the output of one or more of said semiconductor elements through a via hole in an electrically insulating layer for addressing the plurality of display pixels, and... Agent: Cambridge Display Technology Limited

20110291080 - Electronic device: An electronic device comprising a substrate, a first electrode, at least one organic functional layer, and a second electrode is indicated. The organic functional layer comprises a first, a second, and a third matrix material, wherein the first matrix material has a larger band gap than the second and the... Agent: Osram Opto Semiconductors Gmbh

20110291077 - Enhanced semiconductor devices employing photoactive organic materials and methods of manufacturing same: Methods and apparatus provide for a transistor, including: a semiconductor layer including molecules, protons, and/or ions, etc. diffused therein from a photoactive material; a channel disposed on or in the semiconductor layer; a source disposed on or in the semiconductor layer; a drain disposed on or in the semiconductor layer;... Agent:

20110291088 - Light emitting device: It is an object of the invention to provide a light emitting device which can display a superior image in which luminescent color from each light emitting layer is beautifully displayed and power consumption is lowered in a light emitting element in which light emitting layers are stacked. One feature... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110291087 - Light-emitting element, display device, and method for manufacturing light-emitting element: A light emitter and a method of manufacturing a light emitter. The light emitter includes a first electrode, a charge injection transport layer, a light-emitting layer, and a second electrode that are layered in this order. At least the light-emitting layer is defined by a bank that has at least... Agent: Panasonic Corporation

20110291086 - Light-emitting element, light-emitting device comprising light-emitting element, and method for manufacturing light-emitting element: A hole injection layer and a light-emitting layer are laminated between a first electrode and a second electrode of a light emitter. A bank defines an area in which the light-emitting layer is to be formed. In the area defined by the bank, a hole injection layer has a recess... Agent: Panasonic Corporation

20110291081 - Material for organic electroluminescence device and organic electroluminescence device using the same: An organic EL device material includes at least a unit including 3,5-biscarbazolylphenyl group, a unit including 4-carbazolylphenyl group, and a compound including a unit including a nitrogen-containing aromatic heterocyclic ring bonding the unit including 3,5-biscarbazolylphenyl group and the unit including 4-carbazolylphenyl group.... Agent: Idemitsu Kosan Co., Ltd.

20110291085 - Method for manufacturing light-emitting element, light-emitting element, method for manufacturing light-emitting device, and light-emitting device: A method for manufacturing a light-emitting element. An anode is formed on a main surface of a substrate. A hole-injection layer is formed at least above the anode. At least the hole-injection layer is covered with a protective film. A bank which is provided with an aperture through which a... Agent: Panasonic Corporation

20110291082 - Organic light emitting element: An organic light emitting element includes a pair of electrodes at least one of which has visible light transmittance; and an organic EL layer provided between the pair of electrodes. The organic EL layer includes at least an organic light emitting layer that emits light when a voltage is applied... Agent: Fuji Electric Co., Ltd.

20110291083 - Organometallic complex compounds for photoelectric device and organic photoelectric device including the same: A compound for an organic photoelectric device and an organic photoelectric device, the compound being represented by the following Chemical Formula 1:... Agent:

20110291078 - Otft using paper as substrate and silk protein as insulating material and method for manufacturing the same: An organic thin film transistor (OTFT) using paper as a substrate and silk protein as an insulating material and methods for manufacturing the same are disclosed. The OTFT of the present invention comprises: a paper substrate; a gate disposed on the paper substrate; a gate insulating layer containing silk protein,... Agent:

20110291079 - Surface plasmon-mediated energy transfer of electrically-pumped excitons: An electrically pumped light emitting device emits a light when powered by a power source. The light emitting device includes a first electrode, a second electrode including an outer surface, and at least one active organic semiconductor disposed between the first and second electrodes. The device also includes a dye... Agent: The Regents Of The University Of Michigan

20110291089 - Method for manufacturing semiconductor device: To provide a method for manufacturing a thin film transistor in which contact resistance between an oxide semiconductor layer and source and drain electrode layers is small, the surfaces of the source and drain electrode layers are subjected to sputtering treatment with plasma and an oxide semiconductor layer containing In,... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110291090 - Photoelectric conversion device, manufacturing method thereof and semiconductor device: A manufacturing method of a photoelectric conversion device includes the following steps: forming a first electrode over a substrate; and, over the first electrode, forming a photoelectric conversion layer that includes a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110291092 - Field effect transistor and method for manufacturing the same: Provided is a novel structure of a field effect transistor using a metal-semiconductor junction. The field effect transistor includes a wiring which is provided over a substrate and also functions as a gate electrode; an insulating film which is provided over the wiring, has substantially the same shape as the... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110291091 - Organic light emitting display: In an organic light emitting display, a conductive layer is formed on the bottom surface of a substrate, and the conductive layer is used as a wiring line for supplying a power source, and as the electrode of a capacitor. Therefore, it is possible to easily secure the aperture ratio... Agent: Samsung Mobile Display Co., Ltd.

20110291093 - Semiconductor device and manufacturing method thereof: The present invention relates to a semiconductor device including a thin film transistor comprising a microcrystalline semiconductor which forms a channel formation region and includes an acceptor impurity element, and to a manufacturing method thereof. A gate electrode, a gate insulating film formed over the gate electrode, a first semiconductor... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110291096 - Array substrate and method of fabricating the same: A method of fabricating an array substrate and a display device including the array substrate are discussed. According to an embodiment, the method includes forming a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an oxide semiconductor layer and an etch prevention layer... Agent:

20110291095 - Display device: A display device including a display panel including a first pixel area and a second pixel area adjacent to the first pixel area; and a barrier positioned on a surface of the display panel, the barrier including: a first sub-barrier; and a second sub-barrier, wherein the first sub-barrier and the... Agent: Samsung Mobile Display Co., Ltd.

20110291094 - Display panel: A display panel including a first substrate, a second substrate opposite to the first substrate and a display medium between the first substrate and the second substrate is provided. The first substrate has a scan line, a data line and an active device electrically connected to the scan line and... Agent: Au Optronics Corporation

20110291099 - Display substrate and method of manufacturing the same: A three mask process for forming an LCD substrate includes, depositing in sequence on a base substrate a gate metallic layer, a gate insulation layer and a channel layer. A first photoresist pattern is used to form a gate electrode of a switching device, a channel pattern and a gate... Agent:

20110291098 - Organic el display device, mother substrate of organic el display device, and method of testing organic el display device: t

20110291097 - Tft array substrate, and liquid crystal display panel: An embodiment of the present invention provides a TFT array substrate, in which TFT elements and pixel electrodes being correspondingly connected with the TFT elements are arrayed in matrix on an insulating substrate, the TFT array substrate including: gate bus lines made from a first metal material; source bus lines... Agent: Sharp Kabushiki Kaisha

20110291100 - Device and method for fabricating thin semiconductor channel and buried strain memorization layer: A device and method for inducing stress in a semiconductor layer includes providing a substrate having a dielectric layer formed between a first semiconductor layer and a second semiconductor layer and processing the second semiconductor layer to form an amorphized material. A stress layer is deposited on the first semiconductor... Agent: International Business Machines Corporation

20110291101 - Display and manufacturing method of the same: A display, including a substrate, a plurality of signal wires, a first gate electrode, a second gate electrode, a gate insulating layer, a first semiconductor layer including a first source/drain region doped with a p-type impurity, a second semiconductor layer including a second source/drain region doped with an n-type impurity,... Agent:

20110291102 - Thin film transistor array panel and method for manufacturing the same, and liquid crystal display: A thin film transistor array panel includes a substrate, a first thin film transistor formed on the substrate, a color filter formed on the first thin film transistor and having a through hole, a capping layer formed on the color filter and having an opening, and a pixel electrode formed... Agent:

20110291103 - Trench sidewall contact schottky photodiode and related method of fabrication: A Schottky photodiode may include a monocrystalline semiconductor substrate having a front surface, a rear surface, and a first dopant concentration and configured to define a cathode of the Schottky photodiode, a doped epitaxial layer over the front surface of the monocrystalline semiconductor substrate having a second dopant concentration less... Agent: Stmicroelectronics S.r.l

20110291112 - Normally-off integrated jfet power switches in wide bandgap semiconductors and methods of making: Wide bandgap semiconductor devices including normally-off VJFET integrated power switches are described. The power switches can be implemented monolithically or hybridly, and may be integrated with a control circuit built in a single- or multi-chip wide bandgap power semiconductor module. The devices can be used in high-power, temperature-tolerant and radiation-resistant... Agent: Semisouth Laboratories, Inc.

20110291109 - Polarization enhanced avalanche photodetector and method thereof: An avalanche photodetector comprising a multiplication layer formed of a first material having a first polarization; the multiplication layer having a first electric field upon application of a bias voltage; an absorption layer formed of a second material having a second polarization forming an interface with the multiplication layer; the... Agent: U.s. Government As Represented By The Secretary Of The Army

20110291106 - Power semiconductor device: Provided is a power semiconductor device including: a power semiconductor element; a metal block as a first metal block that is connected to the power semiconductor element through an upper surface electrode pattern as a first upper surface electrode pattern selectively formed on an upper surface of the power semiconductor... Agent: Mitsubishi Electric Corporation

20110291107 - Self-aligned semiconductor devices with reduced gate-source leakage under reverse bias and methods of making: A vertical junction field effect transistor (VJFET) having a self-aligned pin, a p+/n/n+ or a p+/p/n+ gate-source junction is described. The device gate can be self-aligned to within 0.5 μm to the source in order to maintain good high voltage performance (i.e. low DIBL) while reducing gate-source junction leakage under... Agent: Semisouth Laboratories, Inc.

20110291111 - Semiconductor device and semiconductor device manufacturing method: A chip size package includes: a radio frequency substrate having a radio frequency semiconductor circuit formed on a principal surface; a semiconductor cover substrate arranged at a position facing the principal surface of the radio frequency substrate; and a joining frame arranged in a manner such as to surround the... Agent: Panasonic Corporation

20110291105 - Semiconductor module and method of manufacturing the same: A semiconductor module according to the present invention includes: an insulating substrate (4); a plurality of semiconductor chips (1) disposed on a surface of the insulating substrate (4) so as to be apart from each other; solder layers (9) formed, on a back surface side of the insulating substrate (4),... Agent: Mitsubishi Electric Corporation

20110291108 - Semiconductor photodetector with transparent interface charge control layer and method thereof: A detection device comprising a photodetector comprising a first semiconductor layer through which light first enters the photodetector; the first semiconductor layer to semiconductor material crystal lattice which terminates at an interface; the discontinuity of the semiconductor crystal lattice at the interface creating a first interface charge; the first semiconductor... Agent: U.s. Government As Represented By The Secretary Of The Army

20110291110 - Silicon carbide semiconductor device and method of manufacturing the same: The silicon carbide semiconductor device includes a substrate, a drift layer, a base region, a source region, a trench, a gate insulating layer, a gate electrode, a source electrode, a drain electrode, and a deep layer. The deep layer is disposed under the base region and is located to a... Agent: Denso Corporation

20110291104 - Smoothing method for semiconductor material and wafers produced by same: A smoothing method for semiconductor material and semiconductor wafers produced by the method are disclosed. Semiconductor wafers with reduced atomic steps, as well with reduced scratches and subsurface defects can be produced. Such wafers feature an improved growth surface that can provide for the growth of an epilayer with reduced... Agent: Cree, Inc.

20110291126 - Active matrix substrate and display device: An active matrix substrate (5) is provided with: a plurality of source wiring lines (S) and a plurality of gate wiring lines (G) which are arranged in a matrix; and pixels (P) having thin film transistors (25) disposed in the vicinity of the intersections of the source wiring lines (S)... Agent: Sharp Kabushiki Kaisha

20110291122 - Display device and method of manufacturing the same: A display device with the substrate divided into three areas. A semiconductor layer is formed in the first second areas and includes a channel area and source/drain areas; a gate insulating layer formed on the semiconductor layer in an area corresponding to the channel area; and a gate electrode formed... Agent: Samsung Mobile Display Co., Ltd.

20110291113 - Filter for a light emitting device: Embodiments of the invention include a semiconductor light emitting device capable of emitting first light having a first peak wavelength and a wavelength converting element capable of absorbing the first light and emitting second light having a second peak wavelength. In some embodiments, the structure further includes a metal nanoparticle... Agent: Koninklijke Philips Electronics N.v.

20110291124 - Improved packaging for led combinations: In summary, the present invention relates to a device, a system, a method and a computer program enabling a thermally improved packaging of a plurality of light emitting diodes (110, 112, 114) and at least one integrated circuit (116). A most temperature sensitive light emitting diode (110) of the plurality... Agent: Koninklijke Philips Electronics N.v.

20110291114 - Led package structure: A light-emitting diode (LED) package structure includes a substrate, a first LED, a second LED, and a resin material. At least one enclosure made of a transparent material forms on a surface of the substrate, and encloses and forms at least one area on the substrate. The first LED and... Agent: Intematix Technology Center Corporation

20110291127 - Light emitting device and method for fabricating the light emitting device: Disclosed is a light emitting device including, a light emitting structure that has a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, wherein the active layer is provided between the first conductive semiconductor layer and the second conductive semiconductor layer, and includes a plurality of... Agent: Lg Innotek Co., Ltd.

20110291120 - Light emitting devices using connection structures and methods of manufacturing the same: Example embodiments of the present invention relate to a light emitting device having a connection structure and a method of manufacturing the light emitting device. The method of manufacturing may include forming a light emitting region and electrode layers on a substrate in which a plurality of cell regions and... Agent: Samsung Electronics Co., Ltd.

20110291121 - Light emitting element package: A light emitting element package includes a substrate, at least two light emitting element modules and an encapsulation member. The substrate includes a circuit layer. The circuit layer includes a plurality of solder pads. The at least two light emitting element modules are mounted on the substrate. Each of the... Agent: Advanced Optoelectronic Technology, Inc.

20110291128 - Light-emitting element, display device, and method for manufacturing light-emitting element: A light emitter and method for manufacturing a light emitter. The light emitter includes a first electrode, a charge injection transport layer, a light-emitting layer, and a second electrode that are layered in this order. At least the light-emitting layer is defined by bank. The charge injection transport layer includes... Agent: Panasonic Corporation

20110291125 - Lighting module: A lighting module may include a lighting band with a band-shaped flexible substrate, wherein at least one semiconductor light source is applied to a top side of the substrate, wherein the lighting module is faced with a protective layer such that at least one emission area of the at least... Agent: Osram Gesellschaft Mit Beschraenkter Haftung

20110291123 - Method for producing a plurality of led illumination devices and a plurality of led chipsets for illumination devices, and led illumintation device: A method for producing a plurality of LED illumination devices which each emit light having an average value of a first photometric parameter including producing a plurality of LED chips which emit light of the same color; measuring values of the first photometric parameter of the LED chips; combining the... Agent: Osram Gesellschaft Mit Beschr&#xc4 Nkter Haftung

20110291118 - Mother substrate for flat panel display apparatus and method of manufacturing the same: A mother substrate for forming flat panel display apparatuses and a method of manufacturing the same, the mother substrate including a substrate; a plurality of display units on the substrate, the display units being for forming a plurality of flat panel display apparatuses; a sealing substrate facing the display units;... Agent:

20110291119 - Organic light emitting diode display: An organic light emitting diode display is disclosed. The organic light emitting diode display includes a base substrate including a display area and a non-display area around the display area, a plurality of pixels formed over the display area of the base substrate, the plurality of pixels including a common... Agent: Samsung Mobile Display Co., Ltd.

20110291117 - Organic light emitting diode display and manufacturing method therefor: A manufacturing method of an organic light emitting diode (OLED) display device includes forming a thin film transistor and an organic light emitting diode in a display area of a first substrate, forming a thin film encapsulation layer that has a layering structure of an organic film and an inorganic... Agent: Samsung Mobile Display Co., Ltd.

20110291116 - Organic light emitting diode display and method for manufacturing the same: An organic light emitting diode (OLED) display is disclosed. In one embodiment, the display includes i) a substrate, ii) a driving circuit formed on the substrate, iii) an organic light emitting diode formed on the substrate and electrically connected to the driving circuit, iv) an encapsulation thin film formed on... Agent: Samsung Mobile Display Co., Ltd.

20110291115 - Organic light emitting display: An organic light emitting display having first pixel power source lines receiving a pixel driving voltage from first power supply sources and second pixel power source lines arranged between the first pixel power source lines and receiving a pixel driving voltage from second power supply sources, the light emitting diode... Agent:

20110291129 - Optoelectronic device: An optoelectronic device that emits mixed light includes light in a first and a second wavelength range, including a first semiconductor light source having a first light-emitting diode, which during operation emits light in the first wavelength range with a first intensity; a second semiconductor light source having a second... Agent: Osram Opto Semiconductors Gmbh

20110291130 - Photonic structures for efficient light extraction and conversion in multi-color light emitting diodes: A high efficiency light emitting diode (LED) comprised of a substrate, a buffer layer grown on the substrate (if such a layer is needed), a first active region comprising primary emitting species (PES) that are electrically-injected, a second active region comprising secondary emitting species (SES) that are optically-pumped by the... Agent: The Regents Of The University Of California

20110291131 - Light emitting device, planar light source, and display device: A mortar-shaped or funnel-shaped light emitting device (50) includes: a substrate (20); at least one LED chip (25) die-bonded to the substrate (20); and a wavelength converting portion (40) covering said at least one LED chip (25); at least four planes uprising from the substrate (20); and a lens having... Agent:

20110291139 - Chip package and method for forming the same: An embodiment of the invention provides a chip package which includes: a substrate having a first surface and a second surface; an optical device disposed on the first surface; a conducting pad disposed on the first surface; a first alignment mark formed on the first surface; and a light shielding... Agent:

20110291133 - Light emitting device: According to one embodiment, a light emitting device includes a light emitting layer, a first conductivity type layer, a first electrode, a second conductivity type layer, a current blocking layer and a second electrode. The first conductivity type layer is provided on the light emitting layer. The first electrode is... Agent: Kabushiki Kaisha Toshiba

20110291140 - Light emitting device and light emitting device package: Provided is a light emitting device. The light emitting device includes a light emitting structure layer including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, a gallium barrier layer on the light emitting structure layer, and a metal electrode layer on the... Agent:

20110291137 - Light emitting device package: A light emitting device package is provided. The light emitting device package may include a housing including a cavity, a light emitting device disposed within the cavity, a filler filled in the cavity in order to seal the light emitting device, a fluorescent layer disposed on the filler, and an... Agent:

20110291134 - Light emitting device, method for fabricating the light emitting device, light emitting device package, and lighting unit: Provided are a light emitting device, a method for fabricating the light emitting device, a light emitting device package, and a lighting unit. The light emitting device includes a support member having a stepped portion on a side surface, a light emitting structure on the support member, the light emitting... Agent: Lg Innotek Co., Ltd.

20110291135 - Light emitting diode package: A light emitting diode package includes a silicon substrate having a first surface and a second surface opposite to the first surface, wherein the first surface includes a cavity, a light emitting diode chip fixed on a bottom of the cavity, and a glass lens secured to the silicon substrate... Agent: Advanced Optoelectronic Technology, Inc.

20110291132 - Light-emiting device with improved color rendering index: A light-emitting device (LED) is disclosed. The LED includes a carrier substrate having a blue light emitter thereon. A layer containing a fluorescent material is on the blue light emitter. An encapsulant is disposed around the blue light emitter. Pigments are suspended between an outer surface of the encapsulant and... Agent:

20110291136 - Light-emitting element and fabrication method thereof: A light-emitting element includes a substrate, a light-emitting module and at least two electrodes. The light-emitting module is formed on the substrate. The at least two electrodes are formed on the light-emitting module. Exterior surfaces of the light-emitting module are separated into a first part and a second part. The... Agent: Advanced Optoelectronic Technology, Inc.

20110291138 - Light-emitting element package and fabrication method thereof: A light-emitting element package includes a package member for encapsulating a light-emitting element. A plurality of photonic crystal patterns is formed on the package member. A distribution density of the photonic crystal patterns corresponds to light distribution of the light-emitting element. Each photonic crystal pattern consists of a plurality of... Agent: Advanced Optoelectronic Technology, Inc.

20110291143 - Light-emitting-device package and a method for producing the same: A light emitting device package includes: a substrate with a mounting surface; a light emitting device bonded to the mounting surface of the substrate; a light reflecting resin part containing a high reflective material, filled on the substrate around the light emitting device so as to extend in a space... Agent: Samsung Led Co., Ltd.

20110291144 - Optical semiconductor device: A semiconductor optical module M is disclosed, where it includes a stem 2 that installing electronic components 1, a lead pin 3, a circular cap 10, and a lens 5 assembled within the cap 10; and has a flange 12 for welding in an end of the cap 10 opposite... Agent: Sumitomo Electric Industries, Ltd.

20110291145 - Optoelectronic element and manufacturing method thereof: An optoelectronic element includes an optoelectronic unit having a first top surface, a first bottom surface opposite to the first top surface, and a lateral surface between the first top surface and the first bottom surface; a first transparent structure covering the lateral surface and exposing the first top surface... Agent: Epistar Corporation

20110291142 - Oxynitride phosphor, method for preparing the same, and light-emitting device: The present invention relates to an oxynitride phosphor, a method for preparing the same, and a light-emitting device. More specifically, the present invention provides the oxynitride phosphor including crystals represented by the following Chemical Formula, a method for preparing the same, and a light-emitting device including the oxynitride phosphor. The... Agent: Kumho Electric, Inc.

20110291141 - Semiconductor light-emitting element: The present invention is directed to the provision of a semiconductor light-emitting element that has an electrode formed with a desired thickness using a plated metal layer. A semiconductor light-emitting element for flip-chip mounting on a circuit substrate includes a semiconductor layer including a light-emitting layer, an N-side bump electrode... Agent:

20110291153 - Chip submount, chip package, and fabrication method thereof: A light-emitting diode submount includes a base, a through silicon via and a sealing layer. The base has a die side and a back side. The through silicon via penetrates the base to connect the die side and the back side. The through silicon via includes a conoidal-shaped portion converging... Agent:

20110291146 - Dry flux bonding device and method: Methods of forming devices, including LED devices, are described. The devices may include fluorinated compound layers. The methods described may utilize a plasma treatment to form the fluorinated compound layers. The methods described may operate to produce an intermetallic layer that bonds two substrates such as semiconductor wafers together in... Agent: Micron Technology, Inc.

20110291150 - Led illumination device: The invention disclose a light emitting diode (LED) illustration device, comprising a platform, a substrate and a light emitting diode die. The said platform comprises an upper surface and a bottom surface. A first concave portion is formed on the upper surface of the platform, and a second concave portion... Agent: Neobulb Technologies, Inc.

20110291152 - Led lead frame with water-repellent layer: An LED lead frame includes a housing having a cavity for receiving an LED chip, and a pair of conductive leads mounted with the housing. Each lead includes an embedded section retained in the housing. The embedded section is plated with a silver layer thereon and a water-repellent layer disposed... Agent: Hon Hai Precision Industry Co., Ltd.

20110291149 - Light emitting device: According to one embodiment, a light emitting device includes a light emitting chip, an external terminal made of a metal material, and a circuit board. The light emitting chip is mounted on the circuit board via the external terminal. The light emitting chip includes a semiconductor layer, a first electrode,... Agent: Kabushiki Kaisha Toshiba

20110291151 - Light emitting device and lighting apparatus: According to one embodiment, a light emitting device includes a ceramics substrate, a metallic thermally-conductive layer formed on the substrate in which the substrate involves no electric connection, a light emitting element mounted on the metallic thermally-conductive layer, and a metallic bonding layer interposed between the metallic thermally-conductive layer and... Agent: Toshiba Lighting & Technology Corporation

20110291155 - Light-emitting diode chip package body and method for manufacturing same: A light-emitting diode chip package body with an excellent heat dissipation performance and a low manufacturing cost, and a packaging method of the same are disclosed. A LED chip package body is provided, the LED chip package body comprising: a LED chip having an electrode-side surface and at least two... Agent:

20110291147 - Ohmic contacts for semiconductor structures: A composition and method for formation of ohmic contacts on a semiconductor structure are provided. The composition includes a TiAlxNy material at least partially contiguous with the semiconductor structure. The TiAlxNy material can be TiAl3. The composition can include an aluminum material, the aluminum material being contiguous to at least... Agent:

20110291154 - Semiconductor light emitting device: A semiconductor light emitting device, has a package constituted by the lamination of a first insulating layer having a pair of positive and negative conductive wires formed on its upper face, an inner-layer wire below the first insulating layer, and a second insulating layer below the inner-layer wire; a semiconductor... Agent: Nichia Corporation

20110291148 - Semiconductor light emitting device and method for manufacturing same: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, an insulating layer, a first interconnection layer, a second interconnection layer, a first metal pillar, a second metal pillar, a resin layer and a conductive material. The conductive material is provided... Agent: Kabushiki Kaisha Toshiba

20110291156 - Organic electroluminescent element: An organic compound layer includes a fluorescent light-emitting sub-layer, a phosphorescent light-emitting sub-layer, and an exciton generation sub-layer which is disposed therebetween and which generates excitons. The interface between the fluorescent light-emitting sub-layer and the exciton generation sub-layer serves as an energy barrier for carriers. Excitons are generated on the... Agent: Canon Kabushiki Kaisha

20110291157 - Lateral insulated gate bipolar transistor: A lateral insulated gate bipolar transistor includes a semiconductor substrate including a drift layer, a collector region, a channel layer, an emitter region, a gate insulating layer, a gate electrode, a collector electrode, an emitter electrode, and a barrier layer. The barrier layer is disposed along either side of the... Agent: Denso Corporation

20110291158 - Hetero-junction bipolar phototransistor: The present invention provides a HPT having high sensitivity and extensive wavelength band characteristics. The collector and barrier layer (5) is formed on the photo-absorption layer (6), wherein the energy level in the conduction band is higher than that of the photo-absorption layer (6), the energy level in the valence... Agent: National Institute Of Advanced Industrial Sciencce And Technology

20110291160 - Field effect transistor: A field effect transistor includes a nitride-based semiconductor multi-layer structure, a source electrode (108), a drain electrode (109), a protective film (110), and a gate electrode (112) that is provided in a recess structure, which is formed by etching, directly or with a gate insulating film interposed therebetween. The nitride-based... Agent:

20110291159 - Stress release structures for metal electrodes of semiconductor devices: This invention teaches stress release metal electrodes for gate, drain and source in a field effect transistor and stress release metal electrodes for emitter, base and collector in a bipolar transistor. Due to the large difference in the thermal expansion coefficients between semiconductor materials and metal electrodes, significant strain and... Agent:

20110291161 - Physical quantity detecting device and imaging apparatus: A physical quality detecting device including: a detecting unit that detects a physical quantity supplied from the outside with photo-converting pixels which are two-dimensionally arranged, each of which has a selecting transistor for outputting a signal from the detecting unit to a signal line. In the physical quality detecting device,... Agent: Sony Corporation

20110291162 - Solid state imaging device: Each of pixels 10 arranged in an array pattern includes a photoelectric conversion element 11, a transfer transistor 13 for transferring charges to a floating diffusion layer 12, and an amplifier transistor 14 for outputting the transferred charges to an output line. An insulating isolation part 22 isolates the adjacent... Agent: Panasonic Corporation

20110291163 - Reduction of defect rates in pfet transistors comprising a si/ge semiconductor material formed by epitaxial growth: In sophisticated semiconductor devices, the defect rate that may typically be associated with the provision of a silicon/germanium material in the active region of P-channel transistors may be significantly decreased by incorporating a carbon species prior to or during the selective epitaxial growth of the silicon/germanium material. In some embodiments,... Agent: Globalfoundries Inc.

20110291164 - Cmos three-dimensional image sensor detectors with assured non collection of late arriving charge, more rapid collection of other charge, and with improved modulation contrast: A CMOS-implementable TOF detector promptly collects charge whose creation time can be precisely known, while rejecting collection of potentially late arriving charge whose creation time may not be precisely known. Charges created in upper regions of the detector structure are ensured to be rapidly collected, while charges created in the... Agent: Canesta, Inc.

20110291165 - Detector module: A detector module, in particular for super-resolution satellites, contains a multi-chip carrier. At least one TDI-CCD detector and at least one CMOS chip are arranged on the multi-chip carrier, and are electrically connected to one another. The CMOS chip contains at least the digital output electronics for the TDI-CCD detector.... Agent: Deutsches Zentrum Fuer Luft- Und Raumfahrt E.v.

20110291166 - Integrated circuit with finfets and mim fin capacitor: An integrated circuit having finFETs and a metal-insulator-metal (MIM) fin capacitor and methods of manufacture are disclosed. A method includes forming a first finFET comprising a first dielectric and a first conductor; forming a second finFET comprising a second dielectric and a second conductor; and forming a fin capacitor comprising... Agent: International Business Machines Corporation

20110291167 - Semiconductor device: In one embodiment, a semiconductor device includes a substrate having a through hole, and a MEMS capacitor provided above the substrate. The device further includes an integrated circuit configured to control the MEMS capacitor, the circuit including transistors on the substrate and being provided under the MEMS capacitor and on... Agent: Kabushiki Kaisha Toshiba

20110291168 - Semiconductor device having esd structure: Semiconductor layers on active areas for transistors in a memory cell region (region A) and a peripheral circuit region (region B) are simultaneously epitaxially grown in the same thickness in which the adjacent semiconductor layers in region A do not come into contact with each other. Only semiconductor layer (10)... Agent: Elpida Memory, Inc.

20110291169 - Reduced corner leakage in soi structure and method: A structural alternative to retro doping to reduce transistor leakage is provided by providing a liner in a trench, undercutting a conduction channel region in an active semiconductor layer, etching a side, corner and/or bottom of the conduction channel where the undercut exposes semiconductor material in the active layer and... Agent: International Business Machines Corporation

20110291170 - Semiconductor device comprising a buried capacitor formed in the contact level: In a semiconductor device, capacitors may be formed so as to be in direct contact with a transistor by using a shared transistor region, such as a drain region or a source region of closely spaced transistors, as one capacitor electrode, while the other capacitor electrode is provided in the... Agent: Globalfoundries Inc.

20110291171 - Varactor: A variable capacitance device including a plurality of FETs, the sources and drains of each FET being coupled to a first terminal, the gates of each FET being coupled to a second terminal, the capacitance of said device between said first and second terminals varying as a function of the... Agent: International Business Machines Corporation

20110291172 - Semiconductor device and method of fabricating the same: Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes a substrate doped with a first conductive type dopant, a plurality of stacked structures arranged side by side on the substrate and extending in a first direction, each of the stacked structures including gate... Agent:

20110291173 - Semiconductor device and manufacturing method thereof: The invention provides a semiconductor device and its manufacturing method in which a memory transistor and a plurality of thin film transistors that have gate insulating films with different thicknesses are fabricated over a substrate. The invention is characterized by the structural difference between the memory transistor and the plurality... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110291175 - Non-volatile memory devices and methods of manufacturing the same: A non-volatile memory device includes a field region that defines an active region in a semiconductor substrate, a floating gate pattern on the active region, a dielectric layer on the floating gate pattern and a control gate on the dielectric layer. The control gate includes a first conductive pattern that... Agent: Samsung Electronics Co., Ltd.

20110291174 - Nonvolatile semiconductor memory device and method of manufacturing the same: In one embodiment, a nonvolatile semiconductor memory device includes a substrate, and a well region formed in the substrate. The device further includes device regions formed in the well region and defined by isolation trenches formed in the well region, the device regions extending in a first direction parallel to... Agent: Kabushiki Kaisha Toshiba

20110291176 - Non-volatile memory device and method for fabricating the same: A non-volatile memory device includes a pair of columnar cell channels vertically extending from a substrate, a doped pipe channel arranged to couple lower ends of the pair of columnar cell channels, insulation layers over the substrate in which the doped pipe channel is buried, memory layers arranged to surround... Agent:

20110291177 - Nonvolatile memory device and method for fabricating the same: A nonvolatile memory device includes a pipe insulation layer having a pipe channel hole, a pipe gate disposed over the pipe insulation layer, a pair of cell strings each having a columnar cell channel, and a pipe channel coupling the columnar cell channels and surrounding inner sidewalls and a bottom... Agent:

20110291179 - Scalable interpoly dielectric stacks with improved immunity to program saturation: A method for manufacturing a non-volatile memory device is described. The method comprises growing a layer in a siliconoxide consuming material, e.g. DyScO, on top of the upper layer of the layer where charge is stored. A non-volatile memory device is also described. In the non-volatile memory device, the interpoly/blocking... Agent: Imec

20110291178 - Semiconductor device and method for manufacturing same: According to one embodiment, a semiconductor device includes a substrate, a lower gate layer, a stacked body, a dummy electrode layer, an insulating film, and a channel body. The lower gate layer is provided above the substrate. The stacked body includes a plurality of insulating layers and a plurality of... Agent: Kabushiki Kaisha Toshiba

20110291180 - Angled ion implantation in a semiconductor device: Angled ion implants are utilized to form doped regions in a semiconductor pillar formed in an opening of a mask. The pillar is formed to a height less than the height of the mask. Angled ion implantation can be used to form regions of a semiconductor device such as a... Agent:

20110291181 - Semiconductor device and method for manufacturing same: According to one embodiment, a semiconductor device including a cell region and a terminal region includes a first semiconductor region of a first conductivity type, semiconductor pillars of the first and a second conductivity type, a second semiconductor region of the second conductivity type, and a third semiconductor region of... Agent: Kabushiki Kaisha Toshiba

20110291182 - Semiconductor device and method for forming the same: A semiconductor device and a method for forming the same are disclosed. The semiconductor device includes vertical pillars formed by etching a semiconductor substrate and junction regions which are located among the neighboring vertical pillars and spaced apart from one another in a zigzag pattern. As a result, the semiconductor... Agent: Hynix Semiconductor Inc.

20110291183 - Power semiconductor device having low gate input resistance and manufacturing method thereof: A power semiconductor device having low gate input resistance and a manufacturing method thereof are provided. The power semiconductor device includes a substrate, at least a trench transistor, a conductive layer, a metal contact plug, an insulating layer, an interlayer dielectric, a gate metal layer, and a source metal layer.... Agent:

20110291184 - Semiconductor structure and method for manufacturing the same: The present application discloses a semiconductor structure and a method for manufacturing the same. The semiconductor structure comprises a semiconductor substrate; an epitaxial semiconductor layer formed on two side portions of the semiconductor substrate; a gate stack formed at a central position on the semiconductor substrate and abutting the epitaxial... Agent: Institute Of Microelectronics, Chinese Academy Of Sciences

20110291185 - Semiconductor device having an edge termination structure and method of manufacture thereof: A semiconductor device having a semiconductor body (22) comprising an active area (7) and a termination structure (16) surrounding the active area, and a method for the manufacture thereof. The invention particularly concerns a termination structure for such devices having trenched electrodes in the active area. The termination structure comprises... Agent:

20110291186 - Semiconductor power devices manufactured with self-aligned processes and more reliable electrical contacts: This invention discloses semiconductor power device that includes a plurality of top electrical terminals disposed near a top surface of a semiconductor substrate. Each and every one of the top electrical terminals comprises a terminal contact layer formed as a silicide contact layer near the top surface of the semiconductor... Agent:

20110291187 - Double diffused drain metal-oxide-semiconductor devices with floating poly thereon and methods of manufacturing the same: A metal-oxide-semiconductor (MOS) device is disclosed. The MOS device includes a substrate of a first impurity type, a diffused region of a second impurity type in the substrate, a patterned first dielectric layer including a first dielectric portion over the diffused region, a patterned first conductive layer on the patterned... Agent: Macronix International Co., Ltd.

20110291192 - Increasing body dopant uniformity in multi-gate transistor devices: Techniques and structures for increasing body dopant uniformity in multi-gate transistor devices are generally described. In one example, an electronic device includes a semiconductor substrate, a multi-gate fin coupled with the semiconductor substrate, the multi-gate fin comprising a source region, a drain region, and a gate region wherein the gate... Agent:

20110291191 - Mos structure with suppressed soi floating body effect and manufacturing method thereof: The present invention discloses a MOS structure with suppressed floating body effect including a substrate, a buried insulation layer provided on the substrate, and an active area provided on the buried insulation layer comprising a body region, a first conductive type source region and a first conductive type drain region... Agent: Shanghai Institute Of Microsystem And Information Technology, Chinese Academy

20110291188 - Strained finfet: A FinFET is described incorporating at least two fins extending from a common Si containing layer and epitaxial material grown from the common layer and from sidewalls of the fins to introduce strain to the common layer and the fins to increase carrier mobility.... Agent: International Business Machines Corporation

20110291190 - System and method for integrated circuits with cylindrical gate structures: A system and method for integrated circuits with surrounding gate structures are disclosed. The integrated circuits system includes a transistor having a gate all around cylindrical (GAAC) nanowire channel with an interposed dielectric layer. The cylindrical nanowire channel being in a middle section of a semiconductor wire pattern connects the... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20110291189 - Thin channel device and fabrication method with a reverse embedded stressor: A device and method for inducing stress in a semiconductor layer includes providing a substrate having a dielectric layer formed between a first semiconductor layer and a second semiconductor layer. A removable buried layer is provided on or in the second semiconductor layer. A gate structure with side spacers is... Agent: International Business Machines Corporation

20110291193 - High density butted junction cmos inverter, and making and layout of same: A high density, asymmetric, butted junction CMOS inverter, formed on an SOI substrate, may include: an asymmetric p-FET that includes a halo implant on only a source side of the p-FET; an asymmetric n-FET that includes a halo implant on only a source side of the n-FET; and a butted... Agent: International Business Machines Corporation

20110291195 - Depletion-mode mosfet circuit and applications: Positive logic circuits, systems and methods using MOSFETs operated in a depletion-mode, including electrostatic discharge protection circuits (ESD), non-inverting latches and buffers, and one-to-three transistor static random access memory cells. These novel circuits supplement enhancement-mode MOSFET technology and are also intended to improve the reliability of the complementary metal-oxide-semiconductor (CMOS)... Agent:

20110291194 - Protection circuit for semiconductor device: A protection circuit for a semiconductor device includes a first gate electrode formed on a substrate of a first conductivity type, and a source and a drain of a second conductivity type having an opposite polarity to the first conductivity type. The source and the drain are commonly coupled to... Agent:

20110291196 - Self-aligned multiple gate transistor formed on a bulk substrate: Three-dimensional transistors in a bulk configuration may be formed on the basis of gate openings or gate trenches provided in a mask material. Hence, self-aligned semiconductor fins may be efficiently patterned in the underlying active region in a portion defined by the gate opening, while other gate openings may be... Agent: Globalfoundries Inc.

20110291197 - Integrated circuits and manufacturing methods thereof: An integrated circuit includes a first diffusion area for a first type transistor. The first type transistor includes a first drain region and a first source region. A second diffusion area for a second type transistor is spaced from the first diffusion area. The second type transistor includes a second... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110291198 - Scaled equivalent oxide thickness for field effect transistor devices: A method for forming a field effect transistor device includes forming an oxide layer on a substrate, forming a dielectric layer on the oxide layer, forming a first TiN layer on the dielectric layer, forming a metallic layer on the first layer, forming a second TiN layer on the metallic... Agent: International Business Machines Corporation

20110291200 - Integrated circuits and manufacturing methods thereof: An integrated circuit includes a first diffusion area for a first type transistor. The first type transistor includes a first drain region and a first source region. A second diffusion area for a second type transistor is separated from the first diffusion area. The second type transistor includes a second... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110291199 - Sram memory cell with four transistors provided with a counter-electrode: The memory cell is of SRAM type with four transistors provided with a counter-electrode. It comprises a first area made from semiconductor material with a first transfer transistor and a first driver transistor connected in series, their common terminal defining a first electric node. A second transfer transistor and a... Agent: Commissariat A L'energie Atomique Et Aux Energies Alternatives

20110291201 - Multi-strained source/drain structures: The present disclosure provides a semiconductor device. The semiconductor device includes a silicon substrate. The semiconductor device includes first and second regions that are disposed in the substrate. The first and second regions have a silicon compound material. The semiconductor device includes first and second source/drain structures that are partially... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110291202 - Device and method of reducing junction leakage: A device and method for reducing junction leakage in a semiconductor junction includes forming a faceted raised structure in a source/drain region of the device. Dopants are diffused from the faceted raised structure into a substrate below the faceted raised structure to form source/drain regions. A sprinkle implantation is applied... Agent: International Business Machines Corporation

20110291203 - Semiconductor device and method for manufacturing the same: A semiconductor device according to an embodiment of the present invention includes a active region, a drain electrode, a source electrode, a gate electrode, a passivation layer, a source field plate, and a electrical connection. The active region is formed on a semiconductor substrate. The drain electrode, the source electrode,... Agent: Kabushiki Kaisha Toshiba

20110291204 - Semiconductor device having sti with nitride liner and uv light shielding film: A semiconductor device has: a silicon substrate; trench formed downward from the surface of the silicon substrate, the trench defining active regions on the surface of the silicon substrate; a first liner layer of a silicon nitride film covering an inner wall of the trench; a second liner layer of... Agent: Fujitsu Semiconductor Limited

20110291205 - High-k gate dielectric and method of manufacture: A device and method of formation are provided for a high-k gate dielectric and gate electrode. The high-k dielectric material is formed, and a silicon-rich film is formed over the high-k dielectric material. The silicon-rich film is then treated through either oxidation or nitridation to reduce the Fermi-level pinning that... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110291206 - Semiconductor device and method of manufacturing a semiconductor device: A semiconductor device and a method of manufacturing a gate stack for such a semiconductor device. The device includes a gate stack that has a gate insulation layer provided over a channel region of the device, and a metal layer that is insulated from the channel region by the gate... Agent:

20110291207 - Transducer devices having different frequencies based on layer thicknesses and method of fabricating the same: A transducer array on a common substrate includes a membrane and first and second transducer devices. The membrane is formed on the common substrate, and includes a lower layer and an upper layer. The first transducer device includes a first resonator stack formed on at least the lower layer in... Agent: Avago Technologies WirelessIP(singapore) Pte. Ltd.

20110291208 - Element structure, inertia sensor, and electronic device: Manufacturing of an element structure including a capacitor is to be facilitated. An element structure includes a first substrate that has a first support layer and a first movable beam having one end supported side the first support layer and the other end having a void part provided therearound and... Agent: Seiko Epson Corporation

20110291209 - Magnetic memory device: To provide a magnetic memory device having an increased write current and improved reliability in writing. The magnetic memory device of the invention has a substrate, a write line provided over the substrate, a bit line placed with a space from the write line in a thickness direction of the... Agent: Renesas Electronics Corporation

20110291210 - Betavoltaic power converter die stacking: A power converter comprises a first die and a second die. Each die comprises a semiconductor substrate comprising a junction for converting nuclear radiation particles to electrical energy, the junction of each semiconductor substrate comprising a first side and a second side, a first electrode comprising a nuclear radiation-emitting radioisotope... Agent: Medtronic, Inc.

20110291211 - Image sensor and related fabricating method thereof: A fabricating method of an image sensor includes the steps of: providing a substrate; forming sensing elements on the substrate; forming microlenses on the sensing elements; filling a stuffed material on the microlenses, and air regions are formed in the stuffed material; and forming optical filters on the stuffed material.... Agent:

20110291212 - Imaging apparatus having photosensor and manufacturing method of the same: A photosensor comprises a photoelectric conversion device region and a connection pad on the lower surface of a semiconductor substrate, and also comprises a wiring line connected to the connection pad via insulating film under the semiconductor substrate, and a columnar electrode as an external connection electrode connected to the... Agent: Casio Computer Co., Ltd.

20110291214 - Photo mask and method for fabricating image sensors: A method for fabricating an image sensor includes forming an insulation layer over a substrate in a logic circuit region and a pixel region, forming a photoresist over the insulation layer, patterning the photoresist to form a photoresist pattern where the insulation layer in the pixel region is exposed and... Agent:

20110291213 - Photodiode manufacturing method and photodiodes: A semiconductor substrate 2 is dry etched before an insulating layer 4 is exposed, whereby a hole H1 penetrating through the semiconductor substrate 2 and reaching the insulating layer 4 is formed at a position corresponding to a photosensitive region S1. Next, an irregular asperity 22 is formed in a... Agent: Hamamatsu Photonics K.k.

20110291215 - Wafer level image sensor packaging structure and manufacturing method for the same: The present invention discloses a wafer level image sensor packaging structure and a manufacturing method for the same. The manufacturing method includes the following steps: providing a silicon wafer with image sensor chips, providing a plurality of transparent lids, allotting one said transparent lid on top of the corresponding image... Agent: Kingpak Technology Inc.

20110291216 - Image sensor: In an image sensor 1 according to an embodiment of the present invention, a plurality of embedded photodiodes PD(m,n) are arrayed. Each of the embedded photodiodes PD(m,n) comprises a first semiconductor region 10 of a first conductivity type; a second semiconductor region 20 formed on the first semiconductor region 10... Agent: Hamamatsu Photonics K.k.

20110291217 - Photoelectric converter and imaging system including the same: A photoelectric converter includes a substrate, photoelectric converting elements formed in the substrate and each having a light-receiving surface, an antireflection film arranged above at least a part of the light-receiving surface of each photoelectric converting element, an element isolation region including an insulator, a plurality of transistors including read... Agent: Canon Kabushiki Kaisha

20110291218 - Photodiode and photodiode array: A photodiode array PDA1 is provided with a substrate S wherein a plurality of photodetecting channels CH have an n-type semiconductor layer 32. The photodiode array PDA1 is provided with a p− type semiconductor layer 33 formed on the n-type semiconductor layer 32, resistors 24 provided for the respective photodetecting... Agent: Hamamatsu Photonics K.k.

20110291219 - Backside illumination image sensor, method of fabricating the same, and electronic system including the backside illumination image sensor: A backside illumination image sensor, a method of fabricating the same, and an electronic system including the backside illumination image sensor, the backside illumination image sensor including a semiconductor substrate, the semiconductor substrate having an upper surface and a lower surface; photodiodes in the semiconductor substrate; and metal interconnections below... Agent:

20110291221 - Semiconductor light receiving device: A semiconductor light receiving device includes: a substrate having a rectangular shape with first through fourth corners, a multilayer structure formed on the substrate, a light receiving part having a mesa structure positioned at a first corner side from a center part of the rectangular shape of the substrate, a... Agent: Sumitomo Electric Device Innovations, Inc.

20110291220 - Solid-state imaging device: According to one embodiment, a solid-state imaging device includes a first diffusion layer for accumulating carriers generated by a photoelectric effect; a second diffusion layer adjoining the first diffusion layer, the second diffusion layer having a polarity opposite to that of the first diffusion layer; and a reference voltage setting... Agent: Kabushiki Kaisha Toshiba

20110291222 - Silicon dioxide cantilever support and method for silicon etched structures: An apparatus includes a semiconductor layer (2) having therein a cavity (4). A dielectric layer (3) is formed on the semiconductor layer. A plurality of etchant openings (24) extend through the dielectric layer for passage of etchant for etching the cavity. An SiO2 pillar (25) extends from a bottom of... Agent: Texas Instruments Incorporated

20110291223 - Semiconductor device: A semiconductor device includes a semiconductor substrate having a diode active region and an edge termination region adjacent to each other, a first region of a first conductivity type in the diode active region, a second region of a second conductivity type, a third region of the first conductivity type... Agent: Mitsubishi Electric Corporation

20110291224 - Efficient pitch multiplication process: Pitch multiplied and non-pitch multiplied features of an integrated circuit, e.g., features in the array, interface and periphery areas of the integrated circuit, are formed by processing a substrate through a mask. The mask is formed by patterning a photoresist layer which simultaneously defines mask elements corresponding to features in... Agent: Micron Technology, Inc.

20110291226 - Compound semiconductor device and method for fabricating the same: A compound semiconductor device is provided, including a gallium arsenide (GaAs) substrate having a first protrusion portion and a second protrusion portion, wherein the first protrusion portion is formed over a first portion of the GaAs substrate and the second protrusion is formed over a second portion of the GaAs... Agent: Richwave Technology Corp.

20110291227 - Semiconductor device and method for manufacturing: A method for manufacturing a semiconductor device is disclosed. The method includes forming a shallow trench isolation (STI) region extending in a first direction on a semiconductor substrate, forming a mask layer extending in a second direction that intersects with the first direction on the semiconductor substrate and forming a... Agent:

20110291225 - Semiconducture structure and method of forming the semiconductor structure that provides two individual resistors or a capacitor: A semiconductor structure is formed in the metal interconnect structure of an integrated circuit in a method that provides either two individual resistors that are vertically isolated from each other, or a metal-insulator-metal (MIM) capacitor. As a result, both semiconductor resistors and MIM capacitors can be formed in the same... Agent:

20110291228 - Package structure and method for making the same: A package structure which includes a non-conductive substrate, a conductive element, a passivation, a jointed side, a conductive layer, a solder and a solder mask is disclosed. The conductive element is disposed on a surface of the non-conductive substrate and consists of a passive element and a corresponding circuit. The... Agent:

20110291230 - Fuse of a semiconductor device: A method for forming a fuse of a semiconductor device includes performing an ion-implanting process at sides of a fuse blowing region of a metal fuse, thereby increasing the concentration of impurity ions of a thermal transmission path region. In a subsequent laser blowing process, as a result of the... Agent: Hynix Semiconductor Inc.

20110291229 - Semiconductor integrated circuit and method for fabricating the same: A semiconductor integrated circuit includes: a semiconductor chip; a through-chip via passing through a conductive pattern disposed in the semiconductor chip and cutting the conductive pattern; and an insulation pattern disposed on an outer circumference surface of the through-chip via to insulate the conductive pattern from the through-chip via.... Agent:

20110291232 - 3d inductor and transformer: In accordance with an embodiment, a semiconductor device comprises a semiconductor die, an interposer, and conductive bumps bonding the semiconductor die to the interposer. The semiconductor die comprises a first metallization layer, and the first metallization layer comprises a first conductive pattern. The interposer comprises a second metallization layer, and... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110291231 - Method of manufacturing a semiconductor component and structure: A semiconductor component and methods for manufacturing the semiconductor component that includes a monolithically integrated common mode choke. In accordance with embodiments, a transient voltage suppression device may be coupled to the monolithically integrated common mode choke.... Agent:

20110291233 - Semiconductor device with integrated antenna and manufacturing method therefor: There is disclosed a package comprising at least an integrated circuit embedded in an electrically non-conductive moulded material. The moulded material includes at least one moulded pattern on at least one surface thereof, and at least one electrically conductive track in the pattern. There is further provided at least one... Agent:

20110291238 - Bias-controlled deep trench substrate noise isolation integrated circuit device structures: A novel and useful apparatus for and method of providing noise isolation between integrated circuit devices on a semiconductor chip. The invention addresses the problem of noise generated by digital switching devices in an integrated circuit chip that may couple through the silicon substrate into sensitive analog circuits (e.g., PLLs,... Agent: International Business Machines Corporation

20110291235 - Copper interconnection structure with mim capacitor and a manufacturing method thereof: The present invention discloses a copper interconnection structure with MIM capacitor and a manufacturing method thereof. The method firstly makes a copper conductive pattern in a copper interconnection structure and a copper through hole bolt connected with the copper conductive pattern; etch away an insulation layer around the copper through... Agent: Shanghai Institute Of Microsystem And Information Technology, Chinese Academy

20110291237 - Lanthanide dielectric with controlled interfaces: Methods and devices for a dielectric are provided. One method embodiment includes forming a passivation layer on a substrate, wherein the passivation layer contains a composition of silicon, oxygen, and nitrogen. The method also includes forming a lanthanide dielectric film on the passivation layer, and forming an encapsulation layer on... Agent: Micron Technology, Inc.

20110291234 - Semiconductor circuit structure and method of making the same: A semiconductor circuit structure includes an interconnect region, and a material transfer region. The semiconductor circuit structure includes a conductive bonding region which couples the material transfer region to the interconnect region through a bonding interface. The conductive bonding region includes a barrier layer between a conductive layer and bonding... Agent:

20110291239 - Semiconductor device: A semiconductor device includes: a first interlayer insulating film; a first conductive member provided lower than the first interlayer insulating film; a contact plug that penetrates through the first interlayer insulating film, and is electrically connected to the first conductive member, the contact plug including a small-diameter part, and a... Agent: Elpida Memory, Inc.

20110291236 - Semiconductor module with electrical switching elements: A semiconductor module is provided which is capable of lowering surges caused when switching elements are switched on and off. The module has a plurality of lead frames, switching elements, electronic components, and a sealing member. The switching elements are electrically connected to the lead fames respectively. Part of the... Agent: Denso Corporation

20110291240 - Power storage device and method for manufacturing the same: To provide a power storage device with improved cycle characteristics and a method for manufacturing the power storage device, a power storage device is provided with a conductive layer in contact with a surface of an active material layer including a silicon layer after an oxide film, such as a... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110291241 - Semiconductor device: A semiconductor device that has a reduced size and exhibits a superior blocking voltage capability. A semiconductor device includes an edge termination structure between an active region and an isolation region, the edge termination structure being composed of an edge termination structure for a forward bias section and an edge... Agent: Fuji Electric Co., Ltd.

20110291242 - Semiconductor device and method of manufacturing the same: In a semiconductor device in which an IGBT, a control circuit for the IGBT and so on are formed on an SOI substrate divided by trenches, the invention is directed to providing the IGBT with a higher breakdown voltage, an enhanced turn-off characteristic and so on. An N type epitaxial... Agent: On Semiconductor Trading, Ltd. A Bermuda Limited Liability Company

20110291243 - Planarizing etch hardmask to increase pattern density and aspect ratio: Methods for manufacturing a semiconductor device in a processing chamber are provided. In one embodiment, a method includes depositing over a substrate a first base material having a first set of interconnect features, filling an upper portion of the first set of interconnect features with an ashable material to an... Agent: Applied Materials, Inc.

20110291244 - Semiconductor device and method of manufacturing the same: A semiconductor device includes a wiring substrate having an insulating film formed on a surface thereof, a first semiconductor chip mounted on the wiring substrate, and a second semiconductor chip stacked and mounted on the first semiconductor chip so as to form an overhang portion. The insulating film is removed... Agent: Elpida Memory, Inc.

20110291246 - Semiconductor chip and semiconductor package with stack chip structure: A semiconductor package includes a plurality of stacked semiconductor chips and a filling material. Each of the stacked semiconductor chips includes a semiconductor substrate having a first surface and a second surface, wherein a circuit pattern such as a bonding pad is formed on the first surface, and a first... Agent: Hynix Semiconductor Inc.

20110291245 - Semiconductor device with substrate-side exposed device-side electrode and method of fabrication: A semiconductor device with substrate-side exposed device-side electrode (SEDE) is disclosed. The semiconductor device has semiconductor substrate (SCS) with device-side, substrate-side and semiconductor device region (SDR) at device-side. Device-side electrodes (DSE) are formed for device operation. A through substrate trench (TST) is extended through SCS, reaching a DSE turning it... Agent:

20110291247 - Relaxation and transfer of strained material layers: The present invention relates to a method for the formation of an at least partially relaxed strained material layer, the method comprising the steps of providing a seed substrate; patterning the seed substrate; growing a strained material layer on the patterned seed substrate; transferring the strained material layer from the... Agent: S.o.i.tec Silicon On Insulator Technologies

20110291248 - Shielding structure for transmission lines: A shielding structure comprises first and second comb-like structures defined in a first metallization layer on an integrated circuit, each comb-like structure comprising a plurality of teeth, the teeth of each comb-like structure extending toward the other comb-like structure; a first plurality of electrically conducting vias extending upward from the... Agent:

20110291250 - Semiconductor chip package: A semiconductor chip package is provided. The semiconductor chip package includes a lead frame having a chip carrier. A semiconductor chip is mounted on the chip carrier, having a plurality of bonding pads thereon. A package substrate has a cavity therein to accommodate the chip carrier and the semiconductor chip,... Agent: Mediatek Inc.

20110291249 - Semiconductor device and method of forming conductive posts and heat sink over semiconductor die using leadframe: A semiconductor device has a prefabricated multi-die leadframe with a base and integrated raised die paddle and a plurality of bodies extending from the base. A thermal interface layer is formed over a back surface of a semiconductor die or top surface of the raised die paddle. The semiconductor die... Agent: Stats Chippac, Ltd.

20110291251 - Integrated circuit packaging system with multiple row leads and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: forming a first lead adjacent and staggered to a second lead, the first lead having a first external connection portion with a first external conductive layer and a first internal connection portion, the first external connection portion oriented laterally... Agent:

20110291253 - Lead frame, electronic component including the lead frame, and manufacturing method thereof: A lead frame of the present invention includes: a die pad on which a device is mounted; a first connection terminal which is provided around the die pad, and the lower surface of which serves as an external terminal; a second connection terminal which is provided around the die pad... Agent: Panasonic Corporation

20110291252 - Method and system for forming a thin semiconductor device: A method and system for forming a thin semiconductor device are disclosed. In one embodiment, a lead frame is provided over a carrier. At least one semiconductor chip is provided on the lead frame and the at least one semiconductor chip is enclosed with an encapsulating material. The thickness of... Agent:

20110291254 - Semiconductor device package featuring encapsulated leadframe with projecting bumps or balls: Embodiments of the present invention relate to semiconductor device packages featuring encapsulated leadframes in electrical communication with at least one die through electrically conducting bumps or balls and electrically conducting ribbons. Embodiments of the present invention may permit multiple die and/or multiple passive devices to occupy space in the package... Agent: Gem Services, Inc.

20110291255 - Carrier for chip packages: A carrier for holding a plurality of chip packages and a carrier assembly are provided, wherein the chip package has a central area without solder balls and a peripheral area with solder balls formed thereon. The carrier includes a tray component and a plurality of supports disposed on the tray... Agent: Nanya Technology Corporation

20110291256 - Method for fabricating a semiconductor chip package and semiconductor chip package: A semiconductor chip includes a contact pad on a main surface of the chip. An electrically conductive layer is applied onto the contact pad. The main surface of the semiconductor chip is covered with an insulating layer. An electrically conductive contact area is formed within the insulating layer such that... Agent:

20110291257 - Integrated circuit packaging system with dual side connection and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: mounting an integrated circuit over a package carrier; pressing an encapsulation onto the package carrier and with the integrated circuit therein; mounting a conductive frame, having a vertical pillar integral with a horizontal cover, through the encapsulation, over the... Agent:

20110291258 - Heat radiation component and semiconductor package including same: A heat radiation component configured to be provided through a thermal interface material on a semiconductor device mounted on a board includes a first layer to be positioned on a first side and a second layer stacked on the first layer to be positioned on a second side farther from... Agent: Shinko Electric Industries Co., Ltd.

20110291272 - Chip structure: A chip structure includes a semiconductor substrate, an interconnecting metallization structure, a passivation layer, a circuit layer and a bump. The interconnecting metallization structure is over the semiconductor substrate. The passivation layer is over the interconnecting metallization structure. The circuit layer is over the passivation layer. The bump is on... Agent: Megica Corporation

20110291263 - Ic having dielectric polymeric coated protruding features having wet etched exposed tips: A method of fabricating IC die includes providing a substrate having a topside semiconductor surface including active circuitry and a bottomside surface. The IC die includes at least one protruding feature coupled to the active circuitry that protrudes from the bottomside surface or the topside semiconductor surface. The topside semiconductor... Agent: Texas Instruments Incorporated

20110291264 - Integrated circuit packaging system with posts and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing a semiconductor wafer having a chip pad; attaching a wafer frame to the semiconductor wafer, the wafer frame having a horizontal cover integral to a protruding connector with the protruding connector on the chip pad; forming an underfill... Agent:

20110291270 - Manufacturing method of semiconductor device, and mounting structure thereof: A semiconductor device with improved quality and reliability is provided. In a UBM formed over an electrode pad located over a semiconductor substrate, the edge (end) of an Au film as an upper layer is located inside or in the same position as the edge (end) of a TiW film... Agent: Renesas Electronics Corporation

20110291259 - Reliable metal bumps on top of i/o pads after removal of test probe marks: In accordance with the objectives of the invention a new method is provided for the creation of metal bumps over surfaces of I/O pads. Contact pads are provided over the surface of a layer of dielectric. The aluminum of the I/O pads, which have been used as I/O pads during... Agent: Megica Corporation

20110291271 - Semiconductor chip and semiconductor device: A semiconductor chip such as an MMIC is provided. The semiconductor chip has: a Si semiconductor as a substrate; and a low-loss transmission line, and can be easily connected to a circuit board on which the semiconductor chip is to be mounted and can ensure a stable GND potential. The... Agent: Panasonic Corporation

20110291269 - Semiconductor device comprising a stacked die configuration including an integrated peltier element: In a stacked semiconductor device, a Peltier element may be incorporated as a distributed element so as to provide active heat transfer from a high power device into a low power device, thereby achieving superior temperature control in stacked device configurations. For example, a CPU and a dynamic RAM device... Agent: Globalfoundries Inc.

20110291260 - Semiconductor encapsulation adhesive composition, semiconductor encapsulation film-like adhesive, method for producing semiconductor device and semiconductor device: A semiconductor encapsulation adhesive composition comprising (a) an epoxy resin, (b) a curing agent and (c) an antioxidant.... Agent: Hitachi Chemical Company, Ltd.

20110291265 - Semiconductor integrated circuit having a multi-chip structure: A semiconductor integrated circuit having a multi-chip structure includes a number of stacked semiconductor chips. Each of the semiconductor chips includes a first through electrode formed through the semiconductor chip, a first bump pad formed over the semiconductor chip at a region where the first bump pad is separated from... Agent:

20110291266 - Semiconductor integrated circuit having a multi-chip structure: A semiconductor integrated circuit having a multi-chip structure includes a plurality of stacked semiconductor chips. At least one of the semiconductor chips includes first and second metal layers separately formed inside the semiconductor chip, a first internal circuit coupled in series between the first and second metal layers inside the... Agent:

20110291267 - Semiconductor wafer structure and multi-chip stack structure: A semiconductor wafer structure comprises a first surface and a second surface opposite to the first surface, a plurality of chip areas formed on the first surface, a plurality of through-silicon holes formed in each of the plurality of chip areas connecting the first surface and the second surface, and... Agent:

20110291268 - Semiconductor wafer structure and multi-chip stack structure: A semiconductor wafer structure comprises a first surface and a second surface opposite to the first surface, a plurality of chip areas formed on the first surface, a plurality of through-silicon holes formed in each of the plurality of chip areas connecting the first surface and the second surface, and... Agent:

20110291262 - Strength of micro-bump joints: A device includes a work piece including a metal bump; and a dielectric layer having a portion directly over the metal bump. The metal bump and a surface of the portion of the dielectric layer form an interface. A metal finish is formed over and contacting the metal bump. The... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110291261 - Three dimensional stacked package structure: An apparatus, system, and method are disclosed for connecting integrated circuit devices. A plurality of primary electrically conductive contacts and a plurality of primary electrically conductive pillars are electrically coupled to a primary integrated circuit device. The plurality of primary electrically conductive contacts form a pattern corresponding to secondary electrically... Agent: International Business Machines Corporation

20110291273 - Chip bump structure and method for forming the same: A chip bump structure is formed on a substrate. The substrate includes at least one contact pad and a dielectric layer. The dielectric layer has at least one opening. The at least one opening exposes the at least one contact pad. The chip bump structure includes at least one elastic... Agent: Chipmos Technologies Inc.

20110291275 - Method of assembling chips: A method of assembling chips. A first chip and a second chip are provided. At least one conductive pillar is formed on the first chip, and a conductive connecting material is formed on the conductive pillar. The second chip also comprises at least one conductive pillar. The first chip is... Agent: Megica Corporation

20110291274 - Method of manufacturing a semiconductor device: A method of manufacturing a semiconductor device is disclosed. One embodiment provides a carrier. Semiconductor chips are placed over the carrier. The semiconductor chips include contact elements. A polymer material is applied over the semiconductor chips and the carrier. The polymer material is removed until the contact elements are exposed.... Agent: Infineon Technologies Ag

20110291276 - Magnetically sintered conductive via: The present disclosure relates to the field of fabricating microelectronic packages, wherein microelectronic components of the microelectronic packages may have sintered conductive vias comprising sintered metal and magnetic particles.... Agent:

20110291277 - Semiconductor device and method of forming semiconductor device: A semiconductor device includes a wiring, a stack of first, second, and third films, and a contact plug. The stack of first, second, and third films is located over the wiring. The first, second, and third films are stacked in this order. The stack has an opening. The first film... Agent: Elpida Memory, Inc.

20110291278 - Semiconductor devices with low resistance back-side coupling: Electronic elements with very low resistance back-side coupling are provided by forming one or more narrow trenches or pipes, preferably dielectric lined, in front sides of substrates, filling the trenches or pipes with a conductor having a coefficient of expansion not too different from that of the substrate but of... Agent: Freescale Semiconductor, Inc.

20110291279 - Semiconductor article having a through silicon via and guard ring: Disclosed is a semiconductor article which includes a semiconductor base portion, a back end of the line (BEOL) wiring portion on the semiconductor base portion, a through silicon via and a guard ring. The semiconductor base portion is made of a semiconductor material. The BEOL wiring portion includes a plurality... Agent: International Business Machines Corporation

20110291280 - Semiconductor device and manufacturing method thereof: A semiconductor device and a manufacturing method thereof are provided for the improvement of the reliability of copper damascene wiring in which a film between wiring layers and a film between via layers are comprised of an SiOC film with low dielectric constant. A film between wiring layers, a film... Agent: Renesas Electronics Corporation

20110291281 - Partial air gap formation for providing interconnect isolation in integrated circuits: Partial air gap formation for providing interconnect isolation in integrated circuits is described. One embodiment is an integrated circuit (“IC”) structure includes a substrate having two adjacent interconnect features formed thereon; caps formed over and aligned with each of the interconnect features; sidewalls formed on opposing sides of each of... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110291282 - Junction body, semiconductor module, and manufacturing method for junction body: A junction body has a first member and a second member each of which is provided with a joining surface whose main component is copper. A solder member containing, in a tin-base solder material, a three-dimensional web structure whose main component is copper is provided between the first member and... Agent: Toyota Jidosha Kabushiki Kaisha

20110291286 - Electronic device and method for connecting a die to a connection terminal: An electronic device including a die-pad area, a die fixed to the die-pad area, a connection terminal, and a ribbon of conductive material. The ribbon is electrically connected to the die and to the connection terminal, and has a prevalent dimension along a first axis, a width, measured along a... Agent: Stmicroelectronics S.r.i.

20110291283 - Integrated circuit package system with embedded die superstructure and method of manufacture thereof: A method of manufacture of an integrated circuit package system includes: providing a through-silicon-via die having conductive vias therethrough; forming a first redistribution layer on a bottom of the through-silicon-via die coupled to the conductive vias; forming a second redistribution layer on the top of the through-silicon-via die coupled to... Agent:

20110291284 - Interconnect structure with an oxygen-doped sic antireflective coating and method of fabrication: An interconnect structure is provided that includes at least one patterned and cured photo-patternable low k material located on a surface of a patterned and cured oxygen-doped SiC antireflective coating (ARC). A conductively filled region is located within the at least one patterned and cured photo-patternable low k material and... Agent: International Business Machines Corporation

20110291285 - Semiconductor device comprising a die seal with graded pattern density: A die seal of a semiconductor device may be provided with a varying pattern density such that a gradient between the die region and the die seal may be reduced. Consequently, for a given width of the die seal, a required mechanical stability may be achieved, while at the same... Agent: Globalfoundries Inc.

20110291293 - Method for manufacturing an electronic module and an electronic module: This publication discloses an electronic module and a method for manufacturing an electronic module, in which a component (6) is glued (5) to the surface of a conductive layer, from which conductive layer conductive patterns (14) are later formed. After gluing the component (6), an insulating-material layer (1), which surrounds... Agent: Imbera Electronics Oy

20110291288 - Package systems having interposers: A package system includes an integrated circuit disposed over an interposer. The interposer includes a first interconnect structure. A first substrate is disposed over the first interconnect structure. The first substrate includes at least one first through silicon via (TSV) structure therein. A molding compound material is disposed over the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110291292 - Selective shrinkage of contact elements in a semiconductor device: In sophisticated semiconductor devices, the contact elements connecting to active semiconductor regions having formed thereabove closely spaced gate electrode structures may be provided on the basis of a liner material so as to reduce the lateral width of the contact opening, while, on the other hand, non-critical contact elements may... Agent: Globalfoundries Inc.

20110291290 - Semiconductor device: A semiconductor device includes a through-silicon-via arranged to couple a plurality of stacked semiconductor chips, an interconnection line coupled to the through-silicon-via at one side and arranged to couple the through-silicon-via to the semiconductor chip, an internal interconnection line disposed at the other side of the interconnection line and intersected... Agent:

20110291289 - Semiconductor integrated circuit: A semiconductor integrated circuit includes first power supply through-chip vias formed through the semiconductor chip to be in a line in a first direction of the semiconductor chip, second power supply through-chip vias formed through the semiconductor chip to be in, first power lines arranged in a second direction, wherein... Agent:

20110291291 - Silicon chip having penetrative connection holes: Two circuit layout areas on two surfaces of a chip are connected. Holes in the chip are coordinated with a conductive paste to connect the two surfaces. Thus, fabrication is made easy and cost is reduced.... Agent: Mao Bang Electronic Co., Ltd.

20110291287 - Through-silicon vias with low parasitic capacitance: A device has a silicon substrate with a via extending from a first surface of the silicon substrate having a conductor portion. A first dielectric portion surrounds the conductor portion. A second dielectric portion is disposed between a first silicon portion and the silicon substrate.... Agent: Xilinx, Inc.

20110291297 - Microelectronic packages having cavities for receiving microelectronic elements: Packaged microelectronic elements are provided which include a dielectric element, a cavity, a plurality of chip contacts and a plurality of package contacts, and microelectronic elements having a plurality of bond pads connected to the chip contacts.... Agent: Tessera, Inc.

20110291294 - Multi-chip package: A multi-chip package may include a first semiconductor package, a second semiconductor package and an interposer chip. The second semiconductor package may be arranged over the first semiconductor package. The interposer chip may be interposed between the first semiconductor package and the second semiconductor package. The interposer chip may have... Agent: Samsung Electronics Co., Ltd.

20110291296 - Package stacking through rotation: A packaged microelectronic element includes a package element that further includes a dielectric element having a bottom face and a top face, first and second bond windows extending between the top and bottom faces, a plurality of chip contacts disposed at the top face adjacent to the first and second... Agent: Tessera, Inc.

20110291295 - Semiconductor device: A semiconductor device comprises a substrate, pluralities of first and second external electrodes formed in two end portions of one surface of the substrate, a first semiconductor chip mounted on the other surface of the substrate, the first semiconductor chip having an electrode pad row formed in one end portion... Agent: Elpida Memory, Inc.

20110291298 - Chip package including multiple sections for reducing chip package interaction: Thermally induced stress in a semiconductor die, i.e., in a complex metallization system thereof, may be reduced by “dividing” a package substrate into two or more substrate sections, which may have formed therebetween an appropriate stress buffer region, for instance a region of superior resiliency. In this case, the total... Agent: Globalfoundries Inc.

20110291299 - Stress reduction in chip packaging by a stress compensation region formed around the chip: A stress compensation region that may be appropriately positioned on a package substrate may compensate for or at least significantly reduce the thermally induced mechanical stress in a sensitive metallization system of a semiconductor die, in particular during the critical reflow process. For example, a stressor ring may be formed... Agent: Globalfoundries Inc.

20110291300 - Dicing sheet-attached film for forming semiconductor protection film, method for producing semiconductor device using the same, and semiconductor device: The present invention includes a dicing sheet-attached film for forming a semiconductor protection film (14), which protects a semiconductor element (18) mounted on a base material and positioned on the outermost side. The dicing sheet-attached film for forming a semiconductor protection film (14) comprises a protection film-forming layer (12) which... Agent:

20110291302 - Method and apparatus for manufacturing an electronic assembly, electronic assembly manufactured with the method or in the apparatus: A method of producing an electronic module with at least one electronic component and one carrier. A structure is provided on the carrier so that the electronic component can take a desired target position relative to the structure. The structure is coated with a liquid meniscus suitable for receiving the... Agent: M&#xfc Hlbauer Ag

20110291301 - Method for producing semiconductor components, and corresponding semiconductor component: A method for producing semiconductor components and a component obtainable by such a method is disclosed. The method comprises the following steps: fixing a conductive film on a carrier; adhesively bonding semiconductor chips onto the conductive film using an adhesive layer, wherein active surfaces of the semiconductor chips, the active... Agent: Robert Bosch Gmbh

20110291303 - Semiconductor device, substrate for producing semiconductor device and method of producing them: A semiconductor device includes a die pad, a semiconductor element which is loaded on the die pad, and a sealing resin. A plurality of electrically conductive portions each having a layered structure including a metal foil comprising copper or a copper alloy, and electrically conductive portion plating layers provided at... Agent: Dai Nippon Printing Co., Ltd.

20110291304 - Method of making microelectronic package using integrated heat spreader stiffener panel and microelectronic package formed according to the method: A method of making a microelectronic package, and a microelectronic package made according to the method. The method includes: bonding and thermally coupling a plurality of IC dies to an IHS panel to yield a die-carrying IHS panel; mounting the die-carrying IHS panel onto a substrate panel including a plurality... Agent: Intel Corporation