SEARCH:      Monitor Keywords |  Custom RSS

Active solid-state devices (e.g., transistors, solid-state diodes) June invention type 06/11

20110155986 - Dual resistance heater for phase change devices and manufacturing method thereof: A dual resistance heater for a phase change material region is formed by depositing a resistive material. The heater material is then exposed to an implantation or plasma which increases the resistance of the surface of the heater material relative to the remainder of the heater material. As a result,... Agent:

20110155987 - Memory element and memory device: A memory element capable of simultaneously satisfying the number of repeating operation times and a low-voltage operation characteristic which are in a tradeoff relation is provided. The memory element has a high-resistivity layer and an ion source layer between a bottom electrode and a top electrode. The high-resistivity layer is... Agent: Sony Corporation

20110155988 - Memory element and memory device: Provided are a memory element and a memory device. A memory layer is provided with an ion source layer. The ion source layer includes Zr (zirconium), Cu (copper), and Al (aluminum) as a metal element together with an ion conductive material such as S (sulfur), Se (selenium), and Te (tellurium)... Agent: Sony Corporation

20110155985 - Phase change structure, and phase change memory device: A phase change structure includes a first phase change material layer pattern and a second phase change material layer pattern. The first phase change material layer pattern may partially fill a high aspect ratio structure, and the second phase change material layer pattern may fully fill the high aspect ratio... Agent: Samsung Electronics Co., Ltd.

20110155984 - Self-selecting pcm device not requiring a dedicated selector transistor: A Zinc Oxide (ZnO) layer deposited using Atomic Layer Deposition (ALD) over a phase-change material forms a self-selected storage device. The diode formed at the ZnO/GST interface shows both rectification and storage capabilities within the PCM architecture.... Agent:

20110155990 - Continuous plane of thin-film materials for a two-terminal cross-point memory: A structure for a memory device including a plurality of substantially planar thin-film layers or a plurality of conformal thin-film layers is disclosed. The thin-film layers form a memory element that is electrically in series with first and second cladded conductors and operative to store data as a plurality of... Agent: Unity Semiconductor Corporation

20110155989 - Variable resistance memory device and methods of forming the same: A semiconductor memory device includes a first electrode and a second electrode, a variable resistance material pattern including a first element disposed between the first and second electrode, and a first spacer including the first element, the first spacer disposed adjacent to the variable resistance material pattern.... Agent:

20110155993 - Phase change memory devices and fabrication methods thereof: Phase change memory devices and fabrication methods thereof are presented. A phase change memory device includes a substrate structure. A first electrode is disposed on the substrate structure. A hollowed-cone hydrogen silsesquioxane (HSQ) structure is formed on the first electrode. A multi-level cell phase change memory structure is disposed on... Agent: Industrial Technology Research Institute

20110155992 - Phase-separation type phase-change memory: A eutectic memory includes a eutectic memory material layer, a top and a bottom electrodes, or a left and a right electrodes. Materials of the eutectic memory layer are represented by M1-M2-X wherein the M1 is a semiconductor element, the M2 is a metallic element which forms eutectic with the... Agent: Feng Chia University

20110155991 - Resistive memory device and fabricating method thereof: A resistive memory device and a fabricating method thereof are introduced herein. In resistive memory device, a plurality of bottom electrodes is disposed in active region of a substrate. Each of the bottom electrodes is disposed to correspond to each of the conductive channels; a patterned resistance switching material layer... Agent: Industrial Technology Research Institute

20110155994 - Structures for resistance random access memory and methods of forming the same: Memory cells and methods of forming the same and devices including the same. The memory cells have first and second electrodes. An amorphous semiconductor material capable of electronic switching and having a first band gap is between the first and second electrodes. A material is in contact with the semiconductor... Agent: Micron Technology, Inc.

20110155996 - Bistable carbazole compounds: m

20110155995 - Vertically oriented nanostructure and fabricating method thereof: A vertically oriented nanometer-wires structure is disclosed. The vertically oriented nanometer-wires structure includes a non-crystalline base and many straight nanometer-wires. The straight nanometer-wires are uniformly distributed on the non-crystalline base, and the angle between each of the straight nanometer-wire and the non-crystalline base is 80-90 degrees. The straight nanometer-wires structure... Agent:

20110156002 - Light source having light blocking components: Light emitting systems are disclosed. The light emitting system includes an electroluminescent device that emits light at a first wavelength from a top surface of the electroluminescent device. The light emitting system further includes a construction proximate a side of the electroluminescent device for blocking light at the first wavelength... Agent:

20110156000 - Method of manufacturing a semiconductor device and semiconductor device: A method of manufacturing a semiconductor device and the device resulted thereof is disclosed. In one aspect, the device has a heterogeneous layer stack of one or more III-V type materials, at least one transmission layer of the layer stack having a roughened or textured surface for enhancement of light... Agent: Imec

20110156001 - Nitride-based light-emitting device: A nitride-based light-emitting device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a nitride-based buffer layer formed by nitrogen, a first group III element, and optionally, a second group III element, a first nitride-based semiconductor layer, a light-emitting layer, and a second... Agent:

20110155998 - Oscillation device: An oscillation device for oscillating a terahertz wave includes a substrate, an active layer which is provided on an upper portion of the substrate and which generates a terahertz wave by intersubband transition of carrier, and a luminous layer which is provided on an upper portion of the substrate and... Agent: Canon Kabushiki Kaisha

20110155999 - Semiconductor light-emitting devices having concave microstructures providing improved light extraction efficiency and method for producing same: A conventional semiconductor LED is modified to include a microlenslayer over its light-emitting surface. The LED may have an active layer including at least one quantum well layer of InGaN and GaN. The microlens layer includes a plurality of concave microstructures that cause light rays emanating from the LED to... Agent: Lehigh University

20110155997 - Vertical light emitting diode and manufacturing method of the same: The vertical light emitting diode includes a substrate having a plurality of penetrating via-holes, a plurality of nitride semiconductor layers formed on the substrate, a first electrode formed on the plurality of nitride semiconductor layers, and a second electrode formed to fill the plurality of via-holes thereby contacting part of... Agent:

20110156003 - Systems and methods for nanowire growth: The present invention is directed to systems and methods for nanowire growth. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial vertically oriented nanowire growth including providing a substrate material having one or more nucleating particles deposited thereon in a reaction chamber, introducing an... Agent: Nanosys, Inc.

20110156006 - Forming a non-planar transistor having a quantum well channel: In one embodiment, the present invention includes an apparatus having a substrate, a buried oxide layer formed on the substrate, a silicon on insulator (SOI) core formed on the buried oxide layer, a compressive strained quantum well (QW) layer wrapped around the SOI core, and a tensile strained silicon layer... Agent:

20110156005 - Germanium-based quantum well devices: A quantum well transistor has a germanium quantum well channel region. A silicon-containing etch stop layer provides easy placement of a gate dielectric close to the channel. A group III-V barrier layer adds strain to the channel. Graded silicon germanium layers above and below the channel region improve performance. Multiple... Agent:

20110156004 - Multi-gate iii-v quantum well structures: Methods of forming microelectronic structures are described. Embodiments of those methods include forming a III-V tri-gate fin on a substrate, forming a cladding material around the III-V tri-gate fin, and forming a hi k gate dielectric around the cladding material.... Agent:

20110156007 - Complementary logic gate device: Provided is a complementary logical gate device represented by a silicon CMOS logical circuit among semiconductor integrated logical circuits which can effectively solve the problem of the speed performance limit of an ultra-large scale integration and an ultra-low power consumption type logical circuit. The complementary logical gate includes an electron... Agent:

20110156008 - Method for implementing the pi/8 gate in a genus=1 ising system: Disclosed herein is a protocol that enables the π/8-gate in chiral topological superconductors in which superconducting stiffness λ has been suppressed. The protocol enables a topologically protected π/8-gate in any pure Ising system that can be fabricated into genus=1 surface. By adding the π/8-gate to previously known techniques, a design... Agent: Microsoft Corporation

20110156011 - Blue fluorescence compound and organic electroluminescence device using the same: The present invention relates to a blue fluorescence compound which enables to achieve high brightness, a long lifetime and high efficiency; and an organic electroluminescence device thereof.... Agent:

20110156009 - Compact electrical switching devices with nanotube elements, and methods of making same: An electrical device includes a substrate; first and second active areas; first and second word lines disposed in a first plane; first and second bit lines in a second plane and in electrical communication with first and second active areas; and a reference line disposed in a third plane. A... Agent:

20110156013 - Compound for organic photoelectric device and organic photoelectric device including the same: A compound for an organic photoelectric device and an organic photoelectric device including the same, the compound being represented by the following Chemical Formula 1:... Agent:

20110156019 - Derivatized fullerene-based dopants for organic semiconductors: Methods for producing p-doped organic semiconductor material with a fullerene derivative having at least one electron-withdrawing substituent covalently attached thereto, and semiconductor compositions prepared thereby are provided. Also provided are electronic devices, such as transistors, solar-cells, illuminating devices, OLEDs and detectors, comprised of these p-doped organic semiconductor materials.... Agent: Technion Research & Development Foundation, Ltd.

20110156012 - Double layer hardmask for organic devices: Method of manufacturing a substrate comprising an active organic layer, the method comprising providing a substrate comprising a first layer of an organic material, depositing a second layer on the first layer of organic material, depositing a third layer on the second layer, wherein the second layer protects the first... Agent: Sony Corporation

20110156014 - Material for organic photoelectric device and organic photoelectric device including the same: wherein, in Chemical Formula 1, Ar1 is hydrogen or a substituted or unsubstituted aryl, provided that when Ar1 is a substituted aryl having a substituent, Ar2 is not the same as the substituent of Ar1, Ar2 and Ar3 are each independently a substituted or unsubstituted carbazolyl, a substituted or unsubstituted... Agent:

20110156017 - Novel anthracene derivatives and organic electronic device using same: The present invention provides a novel anthracene derivatives and an organic electronic device using the same. The organic electronic device according to the present invention shows excellent properties in terms of efficiency, a driving voltage, and a life span.... Agent:

20110156015 - Organic light emitting display device: An organic light emitting display device including: a substrate; a sealing member; an organic light emitting device between the substrate and the sealing member and for displaying images; a selective light absorbing layer on a surface of the sealing member facing the organic light emitting device and including pigments for... Agent: Samsung Mobile Display Co., Ltd.

20110156016 - Organic light-emitting medium and organic el element: An organic light-emitting medium including a diaminopyrene derivative represented by the following formula (1) and an anthracene derivative represented by the following formula (2);... Agent:

20110156018 - Polymer compound and polymer light-emitting device using the same: [wherein X1 and X2 are the same or mutually different and represent an oxygen atom, a sulfur atom, —N(RN)— or C(Rc1)═C(Rc2)—, R1, R2, R3, R4, RN, Rc1 and Rc2 are the same or mutually different and represent a hydrogen atom, a halogen atom, an alkyl group, an alkoxy group, an... Agent: Sumation Co., Ltd.

20110156010 - Semiconductor device and method for fabricating the same: A semiconductor device includes a gate formed over a substrate, organic semiconductor pattern interposed between the substrate and the gate, junction regions formed in the substrate on both sides of the gate, and junction patterns formed over the junction regions to contact the organic semiconductor patterns.... Agent:

20110156030 - Light-emitting element: In the present invention, a light-emitting element operating at low driving voltage, consuming low power, emitting light with good color purity and manufactured in high yields can be obtained. A light-emitting element is disclosed with a configuration composed of a first layer containing a light-emitting material, a second layer, a... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110156029 - Light-emitting element and ligt-emitting device: It is an object of the present invention to provide a light-emitting element having, between a pair of electrodes, a layer containing a light-emitting material and a transparent conductive film, wherein the electric erosion of the transparent conductive film and reflective metal can be prevented and to provide a light-emitting... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110156025 - Memory device and semiconductor device: It is an object to provide a memory device whose power consumption can be suppressed and a semiconductor device including the memory device. As a switching element for holding electric charge accumulated in a transistor which functions as a memory element, a transistor including an oxide semiconductor film as an... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110156024 - Memory device, semiconductor device, and electronic device: An object is to provide a memory device which does not need a complex manufacturing process and whose power consumption can be suppressed, and a semiconductor device including the memory device. A solution is to provide a capacitor which holds data and a switching element which controls storing and releasing... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110156026 - Method for manufacturing semiconductor device: A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110156027 - Semiconductor device: An object of one embodiment of the present invention is to provide a semiconductor device with a novel structure in which stored data can be stored even when power is not supplied in a data storing time and there is no limitation on the number of times of writing. The... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110156028 - Semiconductor device: The semiconductor device includes a source line, a bit line, a signal line, a word line, memory cells connected in parallel between the source line and the bit line, a first driver circuit electrically connected to the source line and the bit line through switching elements, a second driver circuit... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110156023 - Semiconductor device and manufacturing method thereof: In a semiconductor device using a nonvolatile memory, high speed erasing operation and low power consumption are realized. In a nonvolatile memory in which a channel formation region, a tunnel insulating film, and a floating gate are stacked in this order, the channel formation region is formed using an oxide... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110156022 - Semiconductor device and method for manufacturing the same: A semiconductor device which includes an oxide semiconductor layer, a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, a gate insulating layer covering the oxide semiconductor layer, the source electrode, and the drain electrode, and a gate electrode over the gate insulating layer is provided.... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110156021 - Thin film transistor: A thin film transistor for increasing the conductivity of a channel region and suppressing the leakage current of a back channel region, and a display device including the thin film transistor, are discussed. According to an embodiment, the thin film transistor includes a gate electrode arranged on a substrate, a... Agent:

20110156020 - Transistor: Provided is a transistor including a semiconductor insertion layer between a channel layer and a source electrode. A potential barrier between the channel layer and the source electrode may be increased by the semiconductor insertion layer. The channel layer may be an oxide semiconductor layer. The transistor may be an... Agent:

20110156035 - Disguising test pads in a semiconductor package: A method of forming a semiconductor package is disclosed including disguising the test pads. Test pads are defined in the conductive pattern of the semiconductor package for allowing electrical test of the completed package. The test pads are formed in shapes such as letters or objects so that they are... Agent:

20110156033 - Method and system for tracing die at unit level: A method and system for tracing die at unit level, comprising: assigning a first identification to a support member including a plurality of die support units; generating a second identification corresponding to a die support unit, the second identification including the first identification and a coordinate of the die support... Agent: Stmicroelectronics Sdn Bhd

20110156036 - Method for detecting a void: Methods for detecting a void in an element portion of a semiconductor device having an element portion and a void detection structure are disclosed. As a part of the method, an insulating film is formed on a substrate, a plurality of holes is formed in the insulating film, and a... Agent:

20110156032 - Method of repairing probe pads: A method that includes forming a first level of active circuitry on a substrate, forming a first probe pad electrically connected to the first level of active circuitry where the first probe pad having a first surface, contacting the first probe pad with a probe tip that displaces a portion... Agent: Ibm Semiconductor Research And Development Center (srdc)

20110156034 - Repair circuit and repair method of semiconductor apparatus: A repair circuit of a semiconductor apparatus includes a plurality of through-silicon vias including repeated sets of one repair through-silicon via and an M number of normal through-silicon vias; a transmission unit configured to multiplex input data at a first multiplexing rate based on control signals, and transmit the multiplexed... Agent: Hynix Semiconductor Inc.

20110156031 - Semiconductor device: A semiconductor device is protected from static electricity introduced through bump pads and probe test pads. The semiconductor device includes a bump pad through which data is inputted, a first electrostatic discharge unit configured to discharge static electricity introduced through the bump pad, a probe test pad through which data... Agent:

20110156037 - Thin film transistor substrate: A thin film transistor substrate including a thin film transistor having a drain electrode with an electrode portion, which overlaps with a semiconductor layer, and an extended portion, which extends from the electrode portion and has a portion overlapping with a storage electrode or storage electrode line. A passivation layer... Agent: Samsung Electronics Co., Ltd.

20110156038 - Active device array substrate: An active device array substrate including a substrate, scan lines, data lines, active devices, a first dielectric layer, a common line, a second dielectric layer, a patterned conductive layer, a third dielectric layer, and pixel electrodes is provided. At least a part of the active devices are electrically connected to... Agent: Au Optronics Corporation

20110156039 - Display apparatus and method for manufacturing the same: A display apparatus includes a display substrate and a counter substrate. The display substrate includes a first substrate and a plurality of pixel electrodes formed on the first substrate. The counter substrate includes a second substrate facing the first substrate, a common electrode formed on the second substrate, a first... Agent: Samsung Electronics Co., Ltd.

20110156041 - Polymer substrate and method of forming the same and display device including the polymer substrate and method of manufacturing the display device: A polymer substrate having a weight loss of less than about 1% based on an initial weight at a temperature ranging from about 420° C. to about 600° C., a method for forming the polymer substrate, a display device including the polymer substrate, and a method for manufacturing the display... Agent: Samsung Mobile Display Co. Ltd.

20110156042 - Thin film transistor and fabrication method thereof: A thin film transistor is provided with a high crystallized region in a channel formation region and a high resistance region between a source and a drain, and thus has a high electric effect mobility and a large on current. The thin film transistor includes an “impurity which suppresses generation... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110156040 - Thin film transistor array substrate and method for fabricating the same: A thin film transistor array substrate including a substrate, a gate line intersecting a data line to define a pixel region on the substrate, a switching element disposed at an intersection of the gate line and the data line, a plurality of pixel electrodes and a plurality of first common... Agent:

20110156044 - Dense arrays and charge storage devices: There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.... Agent: Sandisk 3d LLC

20110156043 - Thin film transistor: A thin film transistor disposed on a substrate is provided. The thin film transistor includes a gate, a gate insulating layer, a silicon-rich channel layer, a source, and a drain. The gate is disposed on the substrate. The gate insulator is disposed over the gate. The silicon-rich channel layer is... Agent: Au Optronics Corporation

20110156045 - Crystal manufacturing apparatus, semiconductor device manufactured using the same, and method of manufacturing semiconductor device using the same: A crystal manufacturing apparatus capable of manufacturing a crystal in a desired position on a substrate is provided. A spring has one end fixed to a mount and the other end coupled to a magnetic body. The magnetic body has one end coupled to the spring and the other end... Agent: Hiroshima University

20110156046 - Photomask and thin-film transistor fabricated using the photomask: A photomask includes; a source electrode pattern including; a first electrode portion which extends in a first direction, a second electrode portion which extends in the first direction and is substantially parallel to the first electrode portion, and a third electrode portion which extends from a first end of the... Agent: Samsung Electronics Co., Ltd.

20110156049 - Led device and fabrication method thereof: A LED device includes a n-type first semiconductor layer, a p-type second semiconductor layer, an active layer between the first semiconductor layer and the second semiconductor layer, an electrode positioned on a surface of the second semiconductor layer away from the active layer, and an ohmic contacting layer positioned on... Agent: Hon Hai Precision Industry Co., Ltd.

20110156047 - Nitride semiconductor template and method of manufacturing the same: A nitride semiconductor template and a manufacturing method thereof are provided. The nitride semiconductor template includes a carrier substrate with a first thermal expansion coefficient, a nitride semiconductor layer with a second thermal expansion coefficient different from the first thermal expansion coefficient, and a bonding layer. The nitride semiconductor layer... Agent: Industrial Technology Research Institute

20110156048 - Nitride-based semiconductor device and method for fabricating the same: A nitride-based semiconductor light-emitting device 100 includes a GaN substrate 10, of which the principal surface is an m-plane 12, a semiconductor multilayer structure 20 that has been formed on the m-plane 12 of the GaN-based substrate 10, and an electrode 30 arranged on the semiconductor multilayer structure 20. The... Agent:

20110156050 - Semiconductor device and method for producing the same: The semiconductor device includes a GaN-based layered body having an opening and including an n-type drift layer and a p-type layer located on the n-type drift layer, a regrown layer including a channel and located so as to cover the opening, and a gate electrode located on the regrown layer... Agent: Sumitomo Electric Industries, Ltd.

20110156051 - Semiconductor devices with low leakage schottky contacts: Embodiments include semiconductor devices with low leakage Schottky contacts. An embodiment is formed by providing a partially completed semiconductor device including a substrate, a semiconductor on the substrate, and a passivation layer on the semiconductor, and using a first mask, locally etching the passivation layer to expose a portion of... Agent: Freescale Semiconductor, Inc.

20110156055 - Integrated diamond transduction pixelized imager device and manufacturing process: an electronic circuit for amplification and/or reading of the electrical signal, electrically connected to at least the first electrode and made in a portion of a semiconductor material layer having a thickness lower than or equal to around 1 μm and forming the surface layer of an SOD type substrate,... Agent: Comm. A L'ener. Atom. Et Aux Energies Alter.

20110156053 - Semiconductor device having d mode jfet and e mode jfet and method for manufacturing the same: A semiconductor device includes: a substrate; and depletion and enhancement mode JFETs. The depletion mode JFET includes: a concavity on the substrate; a channel layer in the concavity; a first gate region on the channel layer; first source and drain regions on respective sides of the first gate region in... Agent: Denso Corporation

20110156052 - Semiconductor device having jfet and method for manufacturing the same: A semiconductor device having a JFET includes: a substrate made of semi-insulating semiconductor material; a gate region in a surface portion of the substrate; a channel region disposed on and contacting the gate region; a source region and a drain region disposed on both sides of the gate region so... Agent: Denso Corporation

20110156058 - Silicon carbide monocrystal substrate and manufacturing method therefor: A method for producing a silicon carbide single crystal substrate according to the present invention includes steps of: (A) preparing a silicon carbide single crystal substrate having a mechanically polished main face; (B) performing chemical mechanical polishing on the main face of the silicon carbide single crystal substrate using a... Agent: Hitachi Metals, Ltd.

20110156054 - Silicon carbide semiconductor device and method of manufacturing the same: A silicon carbide semiconductor device having a JFET or a MOSFET includes a semiconductor substrate and a trench. The semiconductor substrate has a silicon carbide substrate, a drift layer on the silicon carbide substrate, a first gate region on the drift layer, and a source region on the first gate... Agent: Denso Corporation

20110156057 - Substrate of the semiconductor on insulator type with intrinsic and doped diamond layers: A semiconductor substrate including at least a layer based on doped diamond with a thickness greater than or equal to approximately 10 μm, a layer based on at least one semiconductor or a stack of layers including the semiconductor-based layer, and a layer based on intrinsic diamond disposed against the... Agent: Comm. A L'energie Atomique Et Aux Energies Alt.

20110156056 - Wavelength-converted semiconductor light emitting device: A material such as a phosphor is optically coupled to a semiconductor structure including a light emitting region disposed between an n-type region and a p-type region, in order to efficiently extract light from the light emitting region into the phosphor. The phosphor may be phosphor grains in direct contact... Agent: Philips Lumileds Lighting Company LLC

20110156059 - Light-emitting component and method for the production thereof: The invention relates to a light-emitting component, in particular an organic luminescent diode, having an electrode and a counter electrode and an organic region arranged between the electrode and the counter electrode and having an organic light-emitting region. Furthermore, the invention relates to methods for the production of such a... Agent: Novaled Ag

20110156060 - Light emission module with high-efficiency light emission and high-efficiency heat dissipation and applications thereof: A light emission module is provided. The light emission module includes a substrate, a plurality of LED chips disposed on the substrate, a fluorescent colloid and a package colloid surrounding the plurality of LED chips. The substrate includes a substrate body and a plurality of chip pads disposed thereon for... Agent: Harvatek Corporation

20110156061 - Light emission module with high-efficiency light emission and high-efficiency heat dissipation and applications thereof: A light emission module is provided. The light emission module includes a substrate, a plurality of LED chips disposed on the substrate, a fluorescent colloid and a package colloid surrounding the plurality of LED chips. The substrate includes a substrate body and a plurality of chip pads disposed thereon for... Agent: Harvatek Corporation

20110156064 - Light emitting device and method of fabricating the same: Disclosed are a light emitting device and a method of fabricating the same. The light emitting device includes a substrate; first and second light emitting cells, each including a first semiconductor layer, an active layer, and a second semiconductor layer; and a connector located between the first and second light... Agent: Seoul Opto Device Co., Ltd.

20110156063 - Organic light emitting diode (oled) display device: An exemplary OLED display device includes a substrate, a colored photo-resist layer and a white OLED arranged in that order. The white OLED includes a reflecting electrode, a transmitting electrode, and an organic white light emitting layer arranged between the reflecting electrode and the transmitting electrode for emitting a white... Agent: Au Optronics Corp.

20110156062 - Organic light-emitting display device and method of manufacturing the same: An organic light-emitting display device and a method of manufacturing the same. The organic light-emitting display device includes a first film formed of an inorganic material, a second film that is formed of an organic material and formed on the first film, and includes a first surface and a second... Agent: Samsung Mobile Display Co., Ltd.

20110156065 - Semiconductor light emitting element and semiconductor light emitting device: Provided is a semiconductor light emitting element wherein generation of an open failure of the light emitting device can be eliminated by ensuring a current pathway when disconnection is generated in a transparent electrode layer. A semiconductor light emitting element (10) is provided with: a first semiconductor layer (12) on... Agent: Nichia Corporation

20110156066 - Semiconductor light-emitting device with a protection layer: The present application discloses a semiconductor light-emitting device with a protection layer. The structure includes a heat dispersion substrate, a first connecting layer on the heat dispersion substrate, a protection layer on the first connecting layer, a second connecting layer on the protection layer, and a light-emitting unit on the... Agent:

20110156067 - Light emitting module and illumination device with the same: A light emitting module includes a substrate, a conductive layer, a first light emitter, a second light emitter and a protection layer. The substrate has a first surface and a second surface on opposite sides of the substrate. The conductive layer is configured in the substrate. The first light emitter... Agent: Lextar Electronics Corporation

20110156068 - Light emitting device, light emitting device package and illumination system: A light emitting device is provided. The light emitting device includes a first conductive type semiconductor layer, an active layer including a plurality of well layers and a plurality of barrier layers on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer.... Agent:

20110156069 - Optoelectronic semiconductor chip and method for the production thereof: A method for producing an optoelectronic semiconductor chip based on a nitride semiconductor system is specified. The method comprises the steps of: forming a semiconductor section with at least one p-doped region; and forming a covering layer disposed downstream of the semiconductor section in a growth direction of the semiconductor... Agent: Osram Opto Semiconductors Gmbh

20110156074 - Chip package and method for fabricating the same: The present invention provides a chip package, including: a chip having a semiconductor device thereon; a cap layer over the semiconductor device; a spacer layer between the chip and the cap layer, wherein the spacer layer surrounds the semiconductor device and forms a cavity between the chip and the cap... Agent:

20110156080 - Light emitting device: A light emitting device is provided with: a pair of an anode and a cathode that are opposed to each other; and a phosphor layer, composed of a plurality of phosphor particles, that is sandwiched between the paired anode and cathode, from direction that is perpendicular to main surfaces of... Agent:

20110156077 - Light emitting device and light emitting device package: A light emitting device is provided. The light emitting device comprises: a conductive support substrate; a bonding layer on the conductive support substrate; a reflective layer on the bonding layer; and a light emitting structure layer on the reflective layer. The bonding layer comprises a solder bonding layer on the... Agent:

20110156073 - Light emitting device, light emitting device package: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure, a buffer layer on the light emitting structure, and a filter layer on the buffer layer.... Agent:

20110156070 - Light emitting diode: The present invention provides a light emitting diode including a lower semiconductor layer formed on a substrate; an upper semiconductor layer disposed above the lower semiconductor layer, exposing an edge region of the lower semiconductor layer; a first electrode formed on the upper semiconductor layer; an insulation layer interposed between... Agent: Seoul Opto Device Co., Ltd.

20110156072 - Methods for packaging light emitting devices and related microelectronic devices: A method for forming a light emitting device includes providing a light emitting diode (LED) configured to emit light of a first color and providing a plurality of semi-spherical lenses made of a silicone material that contains no phosphor material. Each of the lenses has a layer of phosphor material... Agent: Achrolux Inc.

20110156071 - Multi-stack package led: A multi-stack package light emitting diode (LED) includes an LED chip, a first fluorescent powder layer, a first optical bandpass filter layer and a second fluorescent powder layer. The LED chip generates an LED light. The first fluorescent powder layer and the second fluorescent powder layer respectively have a first... Agent: Industrial Technology Research Institute

20110156076 - Optoelectronic component and a method for producing it: An optoelectronic component, includes a carrier, a metallic mirror layer arranged on the carrier, a first passivation layer arranged on a region of the metallic mirror layer, a semiconductor layer that generates an active region during electrical operation arranged on the first passivation layer, a second passivation layer including two... Agent:

20110156079 - Organic el device and method for manufacturing same: A manufacturing method of an organic EL device, comprising: providing a substrate on which a pixel electrode is arranged, forming a liquid repellent organic film on the substrate and the pixel electrode, radiating a light selectively to an area of the pixel electrode to be coated with an organic functional... Agent: Panasonic Corporation

20110156081 - Polymeric wavelength converting elements: A wavelength converting element (104), typically for a LED (101), is provided, comprising luminescent particles (105) dispersed in a matrix (106) comprising crosslinked polysiloxane. Crosslinked polysiloxanes are temperature stable, typically up to temperatures above 300° C., meaning that they are stable under normal operating conditions of light emitting diodes. Further,... Agent: Koninklijke Philips Electronics N.v.

20110156075 - Semiconductor element: A semiconductor element according to an embodiment of present application includes a first voltage drop portion providing a first voltage drop, a second voltage drop portion providing a second voltage drop, and a connecting material between the first voltage drop portion and the second voltage drop portion and having a... Agent:

20110156078 - Semiconductor light-emitting device and method for forming the same: A semiconductor light-emitting device includes a light-impervious substrate, a bonding structure, a semiconductor light-emitting stack, and a fluorescent material structure overlaying the semiconductor light-emitting stack. The semiconductor light-emitting stack is separated from a growth substrate and bonded to the light-impervious substrate via the bonding structure. A method for producing the... Agent:

20110156091 - Contacting a device with a conductor: The invention relates to a method for contacting a device with a conductor 6, the device 1 comprising a substrate 2 with at least one cell 3, a contact region 4 and an encapsulation 5, wherein the encapsulation 5 encapsulates at least the contact region 4, the method comprising the... Agent: Koninklijke Philips Electronics N.v.

20110156087 - Face-up optical semiconductor device and method: A face-up optical semiconductor device can be prepared by forming an n-type GaN layer, an active layer, and a p-type GaN layer on a C-plane sapphire substrate. Parts of the p-type GaN layer and the active layer can be removed, and a transparent electrode can be formed over all or... Agent:

20110156082 - Led module: An exemplary LED module includes a ceramic substrate, a heat spreader, a heat sink, an LED die, and a packaging layer. The substrate defines a hole extending therethrough from a top side to a bottom side thereof. The heat spreader is disposed in the hole with a top side thereof... Agent: Hon Hai Precision Industry Co., Ltd.

20110156083 - Light emission module with high-efficiency light emission and high-efficiency heat dissipation and applications thereof: A light emission module is provided. The light emission module includes a substrate, a plurality of LED chips disposed on the substrate, a fluorescent colloid and a package colloid surrounding the plurality of LED chips. The substrate includes a substrate body and a plurality of chip pads disposed thereon for... Agent: Harvatek Corporation

20110156088 - Light emitting device: A light emitting device includes at least one particle over the light emitter. Light at a first wavelength travels from the emitter along a first path adjacent to the particle and at a second wavelength along a second path that passes through the particle. The particle converts the light on... Agent:

20110156089 - Light emitting device, light emitting device package and lighting system: Embodiments relate to a light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises: a substrate; a light emitting structure over the substrate, the light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active... Agent: Lg Innotek Co., Ltd.

20110156086 - Light emitting diode having electrode extensions: An exemplary embodiment of the present invention discloses a light emitting diode including a lower contact layer having a first edge, a second edge opposite to the first edge, a third edge connecting the first edge to the second edge, and a fourth edge opposite to the third edge, a... Agent: Seoul Opto Device Co., Ltd.

20110156084 - Organic light emitting diode lighting apparatus: An organic light emitting diode lighting apparatus is disclosed. In one embodiment, the apparatus includes: i) a substrate main body including a light emitting region and a sealing region surrounding the light emitting region, ii) an organic light emitting diode formed over the substrate main body and iii) a sealant... Agent: Samsung Mobile Display Co., Ltd.

20110156090 - Semiconductor chip assembly with post/base/post heat spreader and asymmetric posts: A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace and first and second adhesives. The heat spreader includes a first post, a second post and a base. The conductive trace includes a pad and a terminal. The semiconductor device is electrically connected to the conductive... Agent:

20110156085 - Semiconductor package: A semiconductor package includes at least four lead frames each having an extending portion and a connecting portion, a heat dissipation plate having a top surface and a bottom surface, at least one semiconductor chip positioned on the top surface of the heat dissipation plate. At least one conductive wire... Agent: Advanced Optoelectronic Technology, Inc.

20110156092 - Smt encapsulation body of a light-emitting diode with a wide-angle illumination light shape: An SMT encapsulation body of a light-emitting diode with a wide-angle illumination light shape, comprising: a) a substrate; b) an LED die mounted on the substrate by use of SMT; and c) an encapsulation body positioned around the LED die in the shape of a double dome at the top... Agent: Lumenmax Optoelectronics Co., Ltd.

20110156093 - High-voltage power transistor using soi technology: The power transistor configured to be integrated into a trench-isolated thick layer SOI-technology with an active silicon layer with a thickness of about 50 μm. The power transistor may have a lower resistance than the DMOS transistor and a faster switch-off behavior than the IGBT.... Agent: X-fab Semiconductor Foundries Ag

20110156094 - Electrical module: A method for fabricating an electrical module comprising a first substrate plate (101), a second substrate plate (102), and semiconductor components (103-110) between the first and second substrate plates is presented. Also an electrical module obtainable with the method and an electrical converter device including such electrical modules are presented.... Agent: Abb Research Ltd.

20110156095 - Semiconductor component with an emitter control electrode: A semiconductor component includes a first emitter zone of a first conductivity type, a second emitter zone of a second conductivity type, a first base zone arranged between the first and second emitter zones and a first control structure. The first control structure includes a control electrode arranged adjacent the... Agent: Infineon Technologies Ag

20110156096 - Lateral insulated gate bipolar transistor (ligbt): This invention generally relates to LIGBTs, ICs comprising an LIGBT and methods of forming an LIGBT, and more particularly to an LIGBT comprising a substrate region of first conductivity type and peak dopant concentration less than about 1×1017/cm3; a lateral drift region of a second, opposite conductivity type adjacent the... Agent:

20110156097 - Reduced dark current photodetector: A photo-detector comprising: a photo absorbing layer comprising an n-doped semiconductor exhibiting a valence band energy level; a barrier layer, a first side of the barrier layer adjacent a first side of the photo absorbing layer, the barrier layer exhibiting a valence band energy level substantially equal to the valence... Agent:

20110156098 - Buffer structure for semiconductor device and methods of fabrication: Embodiments of the present invention describe a semiconductor device having an buffer structure and methods of fabricating the buffer structure. The buffer structure is formed between a substrate and a quantum well layer to prevent defects in the substrate and quantum well layer due to lattice mismatch. The buffer structure... Agent:

20110156099 - Enhanced confinement of sensitive materials of a high-k metal gate electrode structure: When forming sophisticated high-k metal gate electrode structures, the removal of a dielectric cap material may be accomplished with superior process uniformity by using a silicon dioxide material. In other illustrative embodiments, an enhanced spacer regime may be applied, thereby also providing superior implantation conditions for forming drain and source... Agent:

20110156100 - High electron mobility transistor and method for fabricating the same: A high electron mobility transistor includes a substrate, a buffer layer, a channel layer, a spacer layer, a schottky layer and a cap layer. The buffer layer is formed on the substrate. The channel layer is formed on the buffer layer, in which the channel layer comprises a superlattice structure... Agent: National Chiao Tung University

20110156101 - Semiconductor device and layout design apparatus of semiconductor device: A semiconductor device may include a plurality of logic circuits connected to each other through input and output terminals thereof. The plurality of logic circuits comprising a first sub-plurality of logic circuits coupled to a first one of different power systems. The first sub-plurality of logic circuits is laid out... Agent: Elpida Memory, Inc.

20110156102 - Memory device and method of fabricating the same: A memory array including a plurality of memory cells, a plurality of word lines, a dummy word line, at least a first conductive region and at least a first plug is provided. Each word line is coupled to corresponding memory cells. A dummy word line is directly adjacent to an... Agent: Macronix International Co., Ltd.

20110156103 - Method and system to reduce area of standard cells: A signal routing grid. A first metal layer has wires running in a first direction. A second metal layer, spaced from and substantially parallel to the first metal layer, has wires running in a second direction different to the first direction, such that the wires of the first and second... Agent: Broadcom Corporation

20110156105 - Photosensors including photodiode control electrodes and methods of operating same: A sensor includes a substrate, a floating diffusion node in the substrate, a photodiode in the substrate laterally spaced apart from the floating diffusion region and a transfer transistor coupling the photodiode and the floating diffusion region. The sensor further includes a photodiode control electrode disposed on the photodiode and... Agent: Samsung Electronics Co., Ltd.

20110156104 - Solid-state imaging device, method of manufacturing the same, and electronic apparatus: A solid-state imaging device including a semiconductor substrate, a photoelectric conversion portion interposed between a lower electrode and an upper electrode, a contact plug formed so as to connect the lower electrode and the semiconductor substrate in order to read signal charges generated in the photoelectric conversion portion to the... Agent: Sony Corporation

20110156106 - Hermetic mems device and method for fabricating hermetic mems device and package structure of mems device: A hermetic microelectromechanical system (MEMS) package includes a CMOS MEMS chip and a second substrate. The CMOS MEMS Chip has a first substrate, a structural dielectric layer, a CMOS circuit and a MEMS structure. The structural dielectric layer is disposed on a first side of the first structural substrate. The... Agent: Solid State System Co., Ltd.

20110156110 - Field effect transistors having gate electrode silicide layers with reduced surface damage: Methods of forming integrated circuit devices include forming a field effect transistor having a gate electrode, a sacrificial spacer on a sidewall of the gate electrode and silicided source/drain regions. The sacrificial spacer is used as an implantation mask when forming highly doped portions of the source/drain regions. The sacrificial... Agent:

20110156109 - Method and system for manipulating organic nanostructures: A method of manipulating an organic nanostructure is disclosed. The method comprises: contacting a liquid sample having the organic nanostructure therein with an arrangement of electrodes, and applying voltage to the arrangement of electrodes to manipulate and immobilize the organic nanostructure over the electrodes by electrokinetics.... Agent: The University Of Crete

20110156107 - Self-aligned contacts: A transistor comprises a substrate, a pair of spacers on the substrate, a gate dielectric layer on the substrate and between the pair of spacers, a gate electrode layer on the gate dielectric layer and between the pair of spacers, an insulating cap layer on the gate electrode layer and... Agent:

20110156108 - Semiconductor device and method of manufacturing the same: An insulating cover film is formed over at least a portion of a gate electrode in the direction of the channel width. A diffusion layer is formed to a portion of a substrate situating at a device forming region, thereby forming a source and a drain of a transistor. An... Agent: Renesas Electronics Corporation

20110156113 - Back side illumination image sensor reduced in size and method for manufacturing the same: A back side illumination image sensor reduced in chip size has a capacitor disposed in a vertical upper portion of a pixel region in the back side illumination image sensor in which light is illuminated from a back side of a subscriber, thereby reducing a chip size, and a method... Agent: Siliconfile Technologies Inc.

20110156112 - Image sensor with doped transfer gate: An image sensor includes an array of pixels, with at least one pixel including a photodetector formed in a substrate layer and a transfer gate disposed adjacent to the photodetector. The substrate layer further includes multiple charge-to-voltage conversion regions. A single photodetector can transfer collected charge to a single charge-to-voltage... Agent:

20110156111 - Solid-state image pickup device, electronic apparatus using such solid-state image pickup device and method of manufacturing solid-state image pickup device: A back-illuminated type solid-state image pickup device (1041) includes read circuits (Tr1, Tr2) formed on one surface of a semiconductor substrate (1042) to read a signal from a photo-electric conversion element (PD) formed on the semiconductor substrate (1042), in which electric charges (e) generated in a photo-electric conversion region (1052c1)... Agent: Sony Corporation

20110156114 - Image sensor using light-sensitive transparent oxide semiconductor material: An image sensor according to example embodiments may include a plurality of light-sensitive transparent oxide semiconductor layers as light-sensing layers. The light-sensing layers may be stacked in one unit pixel region.... Agent: Samsung Electronics Co., Ltd.

20110156115 - Apparatus for variable resistive memory punchthrough access method: Variable resistive punchthrough access methods are described. The methods include switching a variable resistive data cell from a high resistance state to a low resistance state by passing a write current through the magnetic tunnel junction data cell in a first direction. The write current is provided by a transistor... Agent: Seagate Technology LLC

20110156116 - Relaxed-pitch method of aligning active area to digit line: According to one aspect of the invention, a memory device is disclosed. The memory device comprises a substantially linear active area comprising a source and at least two drains defining a first axis. The memory device further comprises at least two substantially parallel word lines, at least a portion of... Agent: Micron Technology, Inc.

20110156117 - Semiconductor device: An object of the present invention is to provide a semiconductor device having a novel structure in which in a data storing time, stored data can be stored even when power is not supplied, and there is no limitation on the number of writing. A semiconductor device includes a first... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110156120 - Semiconductor device and method of manufacturing same: There are provided: a silicon pillar that is formed almost perpendicularly to a main surface of a substrate; first and second impurity diffused layers that are arranged in a lower part and an upper part of the silicon pillar, respectively; a gate electrode that is arranged horizontally through the silicon... Agent: Elpida Memory, Inc.

20110156118 - Semiconductor device with vertical cells and fabrication method thereof: A method for fabricating a semiconductor substrate includes defining an active region by forming a device isolation layer over the substrate, forming a first trench dividing the active region into a first active region and a second active region, forming a buried bit line filling a portion of the first... Agent:

20110156119 - Semiconductor memory devices and methods of forming the same: Semiconductor memory devices and methods of forming the same are provided, the semiconductor memory devices include a first and a second buried gate respectively disposed on both inner sidewalls of a groove formed in an active portion and a device isolation pattern. The first and second buried gates are controlled... Agent: Samsung Electronics Co., Ltd.

20110156122 - High density nor flash array architecture: In one embodiment of the invention, a memory includes wordline jogs and adjacent spacers. Spacers from different wordlines may contact one another on either side of a drain contact and consequently isolate and self-align the contact in the horizontal and vertical directions.... Agent:

20110156121 - Memory cell with improved retention: A method for forming a device is presented. A substrate prepared with a feature having first and second adjacent surfaces is provided. A device layer is formed on the first and second adjacent surfaces of the feature. A first portion of the device layer over the first adjacent surface includes... Agent: Chartered Semiconductor Manufacturing, Ltd.

20110156123 - Method for manufacturing twin bit structure cell with hafnium oxide layer: A method for manufacturing a twin bit cell structure of with a hafnium oxide material includes providing a semiconductor substrate having a surface region and forming a gate dielectric layer overlying the surface region. The method forms a polysilicon gate structure overlying the gate dielectric layer and subjects the polysilicon... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20110156125 - Nonvolatile semiconductor device including a floating gate and associated systems: A memory device includes a first floating gate electrode on a substrate between adjacent isolation layers in the substrate, at least a portion of the first floating gate protruding above a portion of the adjacent isolation layers, a second floating gate electrode, electrically connected to the first floating gate electrode,... Agent: Samsung Electronics Co., Ltd.

20110156124 - Nonvolatile semiconductor memory device and method of manufacturing the same: The invention enhances program performance by increasing a coupling ratio between an N+ type source layer and a floating gate and reduces a memory cell area. Trenches are formed on the both sides of an N+ type source layer. The sidewalls of the trench includes first and second trench sidewalls... Agent: Sanyo Semiconductor Co., Ltd.

20110156126 - Semiconductor device having an oxide film formed on a semiconductor substrate sidewall of an element region and on a sidewall of a gate electrode: A first isolation is formed on a semiconductor substrate, and a first element region is isolated via the first isolation. A first gate insulating film is formed on the first element region, and a first gate electrode is formed on the first gate insulating film. A second isolation is formed... Agent:

20110156128 - Dielectric film manufacturing method: The present invention provides a manufacturing method of a dielectric film which reduces a leak current value while suppressing the reduction of a relative permittivity, suppresses the reduction of a deposition rate caused by the reduction of a sputtering rate, and also provides excellent planar uniformity. A dielectric film manufacturing... Agent: Canon Anelva Corporation

20110156127 - Flash memory device with word lines of uniform width and method for manufacturing thereof: A method for manufacturing a semiconductor device, the method including: forming a bit line in a semiconductor substrate; forming a plurality of word lines which intersect with the bit line at predetermined intervals on the semiconductor substrate; eliminating a portion of the plurality of word lines; forming an interlayer insulating... Agent:

20110156130 - Method for forming narrow structures in a semiconductor device: A method of forming multiple conductive structures in a semiconductor device includes forming spacers adjacent side surfaces of a mask, where the mask and the spacers are formed on a conductive layer. The method also includes etching at least one trench in a portion of the conductive layer not covered... Agent: Spansion LLC

20110156129 - Method for manufacturing twin bit structure cell with hafnium oxide and nano-crystalline silicon layer: A method and system for forming a non-volatile memory structure. The method provides a semiconductor substrate and forms a gate dielectric layer overlying a surface region of the semiconductor substrate. A polysilicon gate structure is formed overlying the gate dielectric layer. The method subjects the polysilicon gate structure to an... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20110156131 - Nonvolatile semiconductor memory device and method for manufacturing the same: On a silicon substrate is formed a stacked body by alternately stacking a plurality of silicon oxide films and silicon films, a trench is formed in the stacked body, an alumina film, a silicon nitride film and a silicon oxide film are formed in this order on an inner surface... Agent: Kabushiki Kaisha Toshiba

20110156132 - Nonvolatile semiconductor memory device: A nonvolatile semiconductor memory device according to an embodiment includes memory strings which have a plurality of transistors including gate electrode films formed over sides of columnar semiconductor films on gate dielectric films in a height direction of the semiconductor films, and which are arranged in a matrix shape substantially... Agent: Kabushiki Kaisha Toshiba

20110156133 - Semiconductor nanostructures, semiconductor devices, and methods of making same: A semiconductor structure is provided, which includes multiple sections arranged along a longitudinal axis. Preferably, the semiconductor structure comprises a middle section and two terminal sections located at opposite ends of the middle section. A semiconductor core having a first dopant concentration preferably extends along the longitudinal axis through the... Agent: International Business Machines Corporation

20110156134 - Method of fabricating semiconductor device and semiconductor device fabricated thereby: The present invention is for weakening an electric field between a gate and a drain and preventing an electronic short between them. An embodiment of the present invention provides a method for manufacturing a semiconductor device, comprising forming a highly doped region in a semiconductor substrate through a first ion... Agent: Hynix Semiconductor Inc.

20110156135 - Buried gate in semiconductor device and method for fabricating the same: A buried gate in a semiconductor device and a method for fabricating the same are presented. The method includes: forming a gate trench in an active region of a semiconductor substrate; filling the gate trench with a barrier metal film and a metal film; recessing the metal film and the... Agent: Hynix Semiconductor Inc.

20110156136 - Semiconductor component and manufacturing method thereof: A semiconductor component includes: a semiconductor substrate; and a semiconductor device provided thereon, the device being a field-effect transistor that includes: a gate insulating film provided on the substrate; a gate electrode provided via the film; and a pair of source-drain regions provided to sandwich the electrode, the substrate including... Agent: Sony Corporation

20110156138 - Semiconductor device and method of manufacturing the same: In a well region, an irregular structure is formed in a gate width direction, and a gate electrode is formed in concave portions and on top surfaces of convex portions via an insulating film. Upper and lower source regions are formed on one side of the gate electrode in a... Agent: Seiko Instruments Inc.

20110156137 - Trench gate semiconductor device and the method of manufacturing the same: A trench gate semiconductor device is disclosed which has a trench gate structure including an insulator in the upper portion of a first trench, the insulator being on a gate electrode; a source region having a lower end surface positioned lower than the upper surface of the gate electrode; a... Agent: Fuji Electric Systems Co., Ltd.

20110156139 - Super-junction trench mosfet with resurf step oxide and the method to make the same: A super-junction trench MOSFET with Resurf Stepped Oxide is disclosed. The inventive structure can apply additional freedom for better optimization and manufacturing capability by tuning thick oxide thickness to minimize influence of charge imbalance, trapped charges, etc. . . . . Furthermore, the fabrication method can be implemented more reliably... Agent: Force Mos Technology Co. Ltd.

20110156140 - Method for manufacturing a power device being integrated on a semiconductor substrate, in particular having a field plate vertical structure and corresponding device: An embodiment of a method for manufacturing a power device integrated on a semiconductor substrate comprising the steps of: growth on said substrate of an epitaxial layer; photo-lithography and etching of said epitaxial layer for the formation of at least one deep trench; deposition of a dielectric layer with partial... Agent: Stmicroelectronics S.r.l.

20110156141 - Transistor and method thereof: An electronic device can include a first well region of a first conductivity-type and a second well region of a second conductivity-type and abutting the first well region. The first conductivity-type and the second conductivity type can be opposite conductivity types. In an embodiment, an insulator region can extend into... Agent: Semiconductor Components Industries, LLC

20110156142 - High voltage device with partial silicon germanium epi source/drain: A semiconductor device is provided which includes a semiconductor substrate, a gate structure formed on the substrate, sidewall spacers formed on each side of the gate structure, a source and a drain formed in the substrate on either side of the gate structure, the source and drain having a first... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110156143 - Parasitic vertical pnp bipolar transistor and its fabrication method in bicmos process: This invention published a parasitic vertical PNP bipolar transistor in BiCMOS (Bipolar Complementary Metal Oxide Semiconductor) process; the bipolar transistor comprises a collector, a base and an emitter. Collector is formed by active region with p-type ion implanting layer. It connects a p-type buried layer which formed in the bottom... Agent:

20110156144 - Compensated isolated p-well denmos devices: An integrated circuit with a core PMOS transistor formed in a first n-well and an isolated DENMOS (iso-DENMOS) transistor formed in a second n-well where the depth and doping of the first and second n-wells are the same. A method of forming an integrated circuit with a core PMOS transistor... Agent: Texas Instruments Incorporated

20110156145 - Fabrication of channel wraparound gate structure for field-effect transistor: A method for fabricating a field-effect transistor with a gate completely wrapping around a channel region is described. Ion implantation is used to make the oxide beneath the channel region of the transistor more etchable, thereby allowing the oxide to be removed below the channel region. Atomic layer deposition is... Agent:

20110156146 - Efuse enablement with thin polysilicon or amorphous-silicon gate-stack for hkmg cmos: An eFUSE is formed with a gate stack including a layer of embedded silicon germanium (eSiGe) on the polysilicon. An embodiment includes forming a shallow trench isolation (STI) region in a substrate, forming a first gate stack on the substrate for a PMOS device, forming a second gate stack on... Agent: Globalfoundries Inc.

20110156147 - Electrostatic discharge protection device: An electrostatic discharge protection device includes first and second wells of a first conductivity type, the first and second wells having different impurity doping concentrations, respectively, a gate formed on the first well, a source region of a second conductivity type formed at one side of the gate in the... Agent:

20110156149 - Dummy pattern design for thermal annealing: The present disclosure provides a semiconductor structure including a semiconductor substrate having a device region and a dummy region adjacent the device region; a plurality of active regions in the device region; and a plurality of dummy active regions in the dummy region, where each of the active regions has... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110156151 - Electrode pick up structure in shallow trench isolation process: This invention disclosed a kind of electrode pick up structure in shallow trench isolation process. The active region is isolated by shallow trench. A pseudo-buried layer under the bottom of shallow trench is formed. The pseudo-buried layer extends into active region and connects to doping region one which needs to... Agent:

20110156150 - Semiconductor device and design method thereof: A semiconductor device includes a plurality of first cells having a first cell height, and a plurality of second cells having a second cell height. Each of the first cells has a first MIS transistor of a first conductivity type, and a substrate contact region of a second conductivity type.... Agent:

20110156148 - Semiconductor device and method for making the same using semiconductor fin density design rules: A method for designing a semiconductor ic chip includes dividing the chip into functional blocks such as a core portion and one or more other functional cells and applying design rules concerning the spatial arrangement of semiconductor fins to the core portion but not to the other functional cells. The... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20110156152 - Cmp techniques for overlapping layer removal: Chemical-Mechanical Polishing can be used to planarize a semiconductor wafer having a patterned overlapping layer. Isotropic etching can remove a portion of the patterned overlapping layer to produce tapered sidewalls of reduced height. A portion of the overlapping layer can be removed using CMP. The overlapping layer can have a... Agent: Stmicroelectronics Inc.

20110156158 - High-k metal gate cmos: A method of forming a semiconductor device is provided that includes forming a Ge-containing layer atop a p-type device regions of the substrate. Thereafter, a first dielectric layer is formed in a second portion of a substrate, and a second dielectric layer is formed overlying the first dielectric layer in... Agent: International Business Machines Corporation

20110156154 - High-k metal gate electrode structures formed at different process stages of a semiconductor device: Sophisticated high-k metal gate electrode structures are provided on the basis of a hybrid process strategy in which the work function of certain gate electrode structures is adjusted in an early manufacturing stage, while, in other gate electrode structures, the initial gate stack is used as a dummy material and... Agent:

20110156157 - One-time programmable charge-trapping non-volatile memory device: A one-time programmable (OTP) charge-trapping non-volatile memory (NVM) device is described. In an embodiment, an OTP transistor is formed using a thick gate oxide typically used in producing an I/O MOS transistor and source/drain extensions which are highly doped, shallow and include pocket implants and which are typically used in... Agent: Cambridge Silicon Radio Ltd.

20110156153 - Predoped semiconductor material for a high-k metal gate electrode structure of p- and n-channel transistors: In a process strategy for forming high-k metal gate electrode structures in an early manufacturing phase, a predoped semiconductor material may be used in order to reduce the Schottky barrier between the semiconductor material and the conductive cap material of the gate electrode structures. Due to the substantially uniform material... Agent:

20110156156 - Semiconductor device: A semiconductor device comprises a substrate, a first stress, and a second stress. The substrate has a first-type MOS transistor, an input/output (I/O) second-type MOS transistor, and a core second-type MOS transistor formed thereon. The first-type and the second-type are opposite conductivity types with respect to each other. The first... Agent: United Microelectronics Corp.

20110156159 - Semiconductor device having sufficient process margin and method of forming same: According to some embodiments of the invention, a substrate doped with a P type impurity is provided. An N type impurity is doped into the substrate to divide the substrate into a P type impurity region and an N type impurity region. Active patterns having a first pitch are formed... Agent:

20110156155 - Semiconductor integrated circuit device and process for manufacturing the same: A SRAM of complete CMOS type having its memory cell composed of six MISFETs, in which a pair of local wiring lines for connecting the input/output terminals of CMOS inverters are formed of a refractory metal silicide layer formed over a first conducting layer constituting the individual gate electrodes of... Agent:

20110156160 - Metal oxide semiconductor (mos) type semiconductor device and manufacturing method thereof: A semiconductor device with a metal oxide semiconductor (MOS) type transistor structure, which is used for, e.g. a static random access memory (SRAM) type memory cell, includes a part that is vulnerable to soft errors. In the semiconductor device with the MOS type transistor structure, an additional load capacitance is... Agent: Kabushiki Kaisha Toshiba

20110156161 - Semiconductor device and method of forming the same: A semiconductor device including a substrate, a first device, a second device and an interlayer dielectric layer is provided. The substrate has a first area and a second area. The first device is disposed in the first area of the substrate and includes a first dielectric layer on the substrate... Agent: United Microelectronics Corp.

20110156162 - Semiconductor resistors formed at a lower height level in a semiconductor device comprising metal gates: In sophisticated semiconductor devices comprising high-k metal gate electrode structures formed on the basis of a replacement gate approach, semiconductor-based resistors may be provided without contributing to undue process complexity in that the resistor region is recessed prior to depositing the semiconductor material of the gate electrode structure. Due to... Agent:

20110156163 - Structure of electrode pick up in locos: This invention disclosed a kind of electrode picking up structure in LOCOS isolation process. The active region is isolated by local oxide of silicon (LOCOS). A pseudo buried layer under the bottom of LOCOS is formed. The pseudo-buried layer extends into active region and connects to doping region one which... Agent:

20110156164 - Semiconductor device and method of manufacturing the same: A semiconductor device having a DRAM region and a logic region embedded together therein, including a first transistor formed in a DRAM region, and having a first source/drain region containing at least a first impurity, and a second transistor formed in a logic region, and having a second source/drain region... Agent: Renesas Electronics Corporation

20110156165 - Thin film transistor array substrate and method for fabricating the same: A thin film transistor array substrate including a substrate, a gate line intersecting a data line to define a pixel region on the substrate, a switching element disposed at an intersection of the gate line and the data line, a plurality of pixel electrodes and a plurality of first common... Agent:

20110156166 - High temperature anneal for aluminum surface protection: The present disclosure also provides another embodiment of a method for making metal gate stacks. The method includes forming a first dummy gate and a second dummy gate on a substrate; removing a polysilicon layer from the first dummy gate, resulting in a first gate trench; forming a first metal... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110156167 - Methods for consumption of timing margin to reduce power utilization in integrated circuitry and device implementing the same: A circuit is defined to operate in accordance with a common control signal. The circuit includes a plurality of transistors that have respective timing margins relative to the common control signal. Some of the plurality of transistors are defined differently from another of the plurality of transistors with regard to... Agent: Tela Innovations, Inc.

20110156168 - Sram cell with t-shaped contact: An integrated circuit containing an array of SRAM cells with T-shaped contacts in the inverters, in which drain connecting segments may extend beyond gate connecting segments by a distance greater than 10 percent of a separation distance between ends of opposite drain connecting segments. The drain connecting segments may also... Agent: Texas Instruments Incorporated

20110156170 - Integrated common source power mosfet device, and manufacturing process thereof: An integrated power MOSFET device formed by a substrate); an epitaxial layer of N type; a sinker region of P type, extending through the epitaxial layer from the top surface and in electrical contact with the substrate; a body region, of P type, extending within the sinker region from the... Agent: Stmicroelectronics S.r.i.

20110156169 - Semiconductor apparatus capable of reducing plasma damage: A semiconductor apparatus comprises a semiconductor substrate; a group of PMOS transistors formed on a predetermined portion of the semiconductor substrate; a group of NMOS transistors disposed adjacent to the group of PMOS transistors on the semiconductor substrate; a guard ring region formed between the group of PMOS transistors and... Agent: Hynix Semiconductor Inc.

20110156172 - Enhancing deposition uniformity of a channel semiconductor alloy by forming a recess prior to the well implantation: When forming sophisticated gate electrode structures requiring a threshold adjusting semiconductor alloy for one type of transistor, a recess is formed in the corresponding active region, thereby providing superior process uniformity during the deposition of the semiconductor material. Moreover, the well dopant species is implanted after the recessing, thereby avoiding... Agent:

20110156171 - Semiconductor device and method for fabricating the same: A semiconductor device includes a channel layer formed over a substrate, a gate formed over the channel layer, junction regions formed on both sides of the channel layer to protrude from the substrate, and a buried barrier layer formed between the channel layer and the junction regions.... Agent:

20110156173 - Semiconductor device and method of manufacturing the same: A semiconductor device includes a first pocket region and a second pocket region. The source region includes a first extension region having a concentration peak located at a first depth from a surface of the semiconductor substrate, and the first pocket region has a concentration peak located deeper than the... Agent: Fujitsu Semiconductor Limited

20110156174 - Gate electrode having a capping layer: A method of manufacturing a semiconductor device and a novel semiconductor device are disclosed herein. An exemplary method includes sputtering a capping layer in-situ on a gate dielectric layer, before any high temperature processing steps are performed.... Agent:

20110156176 - Leadframe-based premolded package having acoustic air channel for micro-electro-mechanical system: A low-cost micro-electro-mechanical system (MEMS) has a mass-produced carrier fabricated as a pre-molded leadframe so that the space of the leadframe center is filled with compound and a two-tier recess is created in the center. The first tier is filled by an inset with a first perforation and a second... Agent: Texas Instruments Incorporated

20110156175 - Method of forming a die having an ic region adjacent a mems region: A method that includes forming a first layer having a first dopant concentration, the first layer having an integrated circuit region and a micro-electromechanical region and doping the micro-electromechanical region of the first layer to have a second dopant concentration is presented. The method includes forming a second layer having... Agent: Stmicroelectronics Asia Pacific Pte Ltd.

20110156177 - Reducing capacitive charging in electronic devices: The invention relates to an electronic device for measuring and/or controlling a property of an analyte (100). The electronic device comprises: i) an electrode (Snsr) forming an interface with the analyte (100) in which the electrode (Snsr) is immersed in operational use, the interface having an interface temperature (T), and... Agent: Nxp B.v.

20110156178 - Micro-electro-mechanical system having movable element integrated into leadframe-based package: A MEMS may integrate movable MEMS parts, such as mechanical elements, flexible membranes, and sensors, with the low-cost device package, leaving the electronics and signal-processing parts in the integrated circuitry of the semiconductor chip. The package may be a leadframe-based plastic molded body having an opening through the thickness of... Agent: Texas Instruments Incorporated

20110156179 - Silicon microphone with integrated back side cavity: An integrated circuit containing a capacitive microphone with a back side cavity located within the substrate of the integrated circuit. Access holes may be formed through a dielectric support layer at the surface of the substrate to provide access for etchants to the substrate to form the back side cavity.... Agent: Texas Instruments Incorporated

20110156180 - Package structure having micro-electromechanical element and fabrication method thereof: Proposed is a package structure having a micro-electromechanical (MEMS) element, including a chip having a plurality of electrical connecting pads and a MEMS element formed thereon; a lid disposed on the chip for covering the MEMS element; a stud bump disposed on each of the electrical connecting pads; an encapsulant... Agent: Siliconware Precision Industries Co., Ltd.

20110156182 - Semiconductor device: There is provided a semiconductor device comprising a semiconductor substrate, a magnetoresistive element, a wire, barrier layers, and cladding layers. The semiconductor substrate has a main surface. The magnetoresistive element is located over the main surface of the semiconductor substrate. The wire is located over the magnetoresistive element. The barrier... Agent: Renesas Electronics Corporation

20110156181 - Semiconductor device and manufacturing method of semiconductor device: A semiconductor device is provided which can further suppress the leakage of a magnetic field in a magnetoresistive element, and which can further improve the performance of the semiconductor device. A semiconductor device includes a semiconductor substrate, a lower electrode, a magnetoresistive element, an upper electrode, and a protective film.... Agent: Renesas Electronics Corporation

20110156188 - Image sensor packaging structure with low transmittance encapsulant: An image sensor packaging structure with a low transmittance encapsulant is provided. The image sensor packaging structure includes a substrate, a chip, a transparent lid, and the low transmittance encapsulant. The chip is combined with the substrate. The transparent lid is adhered to the chip and cover above a sensitization... Agent: Kingpak Technology Inc.

20110156187 - Image sensor packaging structure with predetermined focal length: An image sensor packaging structure with a predetermined focal length is provided. The image sensor packaging structure includes a substrate, a chip, an optical assembly, and an encapsulation compound. The chip has a sensitization area and is coupled to the substrate. Conductive contacts on the substrate are electrically connected with... Agent: Kingpak Technology Inc.

20110156183 - Integrated optical receiver architecture for high speed optical i/o applications: An integrated optical receiver architecture may be used to couple light between a multi-mode fiber (MMF) and silicon chip which includes integration of a silicon de-multiplexer and a high-speed Ge photo-detector. The proposed architecture may be used for both parallel and wavelength division multiplexing (WDM) based optical links with a... Agent:

20110156184 - Methods for improving detector response and system thereof: A method and system for detecting light in accordance with other embodiments of the present invention includes providing at least one imaging sensor that detects a band of wavelengths. At least one layer of undoped quantum dots is optically coupled to the at least one imaging sensor. The at least... Agent: Rochester Institute Of Technology

20110156189 - Photodetector with a plasmonic structure: a metallic structure placed on semiconductor layer that forms, with semiconductor layer, a surface Plasmon resonator so as to concentrate the incident electromagnetic radiation on metallic structure in the field concentration zones of semiconductor layer. Semiconductor zones for collecting charge carriers that are oppositely doped to the doping of semiconductor... Agent: Commissariat A L'energie Atomique Et Aux

20110156185 - Resin composition for protection layer of color filter, protection layer of color filter using same and image sensor including same: Disclosed is a resin composition for a protective layer of a color filter including an acrylate-based resin including a repeating unit represented by each of Chemical Formulae 1 to 3, a melamine-based resin represented by Chemical Formula 4, a thermal acid generator (TAG), and a solvent.... Agent: Cheil Industries Inc.

20110156186 - Solid-state imaging device: Certain embodiments provide a solid-state imaging device including: a plurality of pixels provided on a semiconductor substrate, each of the pixels having a semiconductor region that converts incident light from a side of a first face of the semiconductor substrate into signal charges and stores the signal charges; a readout... Agent: Kabushiki Kaisha Toshiba

20110156190 - Electronic component: An electronic component includes a base member comprising a main surface, a cap member on the base member, a first concave portion between the main surface and the cap member, a second concave portion on the main surface, an element on the main surface and above the second concave portion,... Agent: Kyocera Corporation

20110156191 - Package structure for a chip and method for fabricating the same: The embodiment provides a package structure for a chip and a method for fabricating the same. The package structure for the chip includes a chip having a substrate and a bonding pad structure. The chip has an upper surface and a lower surface. An upper packaging layer covers the upper... Agent:

20110156192 - Solid-state image sensing device having a layer on microlens and method for fabricating the same: A solid-state image sensing device comprises: a light receiving unit for receiving light; a microlens formed above the light receiving unit; a fluorine-containing resin material layer formed on the microlens; and a transparent substrate provided over the fluorine-containing resin material layer. A resin layer adheres the fluorine-containing resin material layer... Agent: Panasonic Corporation

20110156193 - Semiconductor component and method of fabricating semiconductor component: There is provided a semiconductor component including: a semiconductor substrate of a first conduction type; a semiconductor layer of a second conduction type that is formed on the semiconductor substrate and is PN-joined with the semiconductor substrate; an insulator layer laminated on the semiconductor layer; a metal layer laminated on... Agent: Oki Semiconductor Co., Ltd.

20110156194 - Photodetector with a plasmonic structure: This photodetector comprises a doped semiconductor layer; a reflective layer located underneath semiconductor layer; a metallic structure placed on semiconductor layer that forms, with semiconductor layer, a surface plasmon resonator, a plurality of semiconductor zones formed in semiconductor layer and oppositely doped to the doping of the semiconductor layer; and... Agent: Commissariat A L'energie Atomique Et Aux Energies Alternatives

20110156196 - Image pickup device and camera: An object is to provide a solid state image pickup device and a camera which do not worsen a sensor performance in terms of an optical property, a saturated charge amount and the like. A solid state image sensor including a pixel region having a plurality of pixels includes at... Agent: Canon Kabushiki Kaisha

20110156195 - Interwafer interconnects for stacked cmos image sensors: An image sensor includes a sensor wafer and a circuit wafer electrically connected to the sensor wafer. The sensor wafer includes unit cells with each unit cell having at least one photodetector and a charge-to-voltage conversion region. The circuit wafer includes unit cells with each unit cell having an electrical... Agent:

20110156197 - Interwafer interconnects for stacked cmos image sensors: An image sensor includes a sensor wafer and a circuit wafer electrically connected to the sensor wafer. The sensor wafer includes unit cells with each unit cell having at least one photodetector and a charge-to-voltage conversion region. The circuit wafer includes unit cells with each unit cell having an electrical... Agent:

20110156198 - Method of fabricating patterned czt and cdte devices: A method of making a semiconductor radiation detector includes the steps of providing a semiconductor substrate having front and rear major opposing surfaces, forming a solder mask layer over the rear major surface, patterning the solder mask layer into a plurality of pixel separation regions, and after the step of... Agent: Redlen Technologies

20110156199 - Low leakage and/or low turn-on voltage schottky diode: A Schottky diode and a method of manufacturing the Schottky diode are disclosed. The Schottky diode has an N-well or N-epitaxial layer with a first region, a second region substantially adjacent to an electron doped buried layer that has a donor electron concentration greater than that of the first region,... Agent: Monolithic Power Systems, Incc

20110156200 - Semiconductor device: A semiconductor memory device includes a semiconductor substrate provided with active areas and an element-isolating insulating film isolating the active areas from each other, the active areas each extending in a first direction; an interlayer insulating film formed on a surface of the semiconductor substrate; and a contact member provided... Agent: Kabushiki Kaisha Toshiba

20110156201 - Air gap fabricating method: An air gap fabricating method is provided. A patterned sacrificial layer is formed over a substrate, and the material of the patterned sacrificial layer includes a germanium-antimony-tellurium alloy. A dielectric layer is formed on the patterned sacrificial layer. A reactant is provided to react with the patterned sacrificial layer and... Agent: Industrial Technology Research Institute

20110156202 - Parasitic vertical pnp bipolar transistor in bicmos process: A parasitic vertical PNP device in one type of BiCMOS process with shallow trench isolation (STI) comprises a collector formed by a p type impurity ion implantation layer inside active area, the bottom of collector connects to a p type buried layer, the p type pseudo buried layer is formed... Agent:

20110156203 - Integrated passive device assembly: There is provided an integrated passive device assembly. An integrated passive device assembly according to an aspect of the invention may include: a board having a wiring pattern provided thereon; an integrated passive device mounted on an upper surface of the board and having conductive patterns provided on upper and... Agent: Samsung Electro-mechanics Co., Ltd.

20110156205 - Integrated circuit device and electronic instrument: An integrated circuit device includes a receiving circuit, a transmission circuit, and common pads common to the receiving circuit and the transmission circuit, which are disposed in such a way that the distance between the receiving circuit and the common pad, and the distance between the transmission circuit and the... Agent: Seiko Epson Corporation

20110156204 - Semiconductor package and method for making the same: The present invention relates to a semiconductor package and a method for making the same. The semiconductor package includes a base material, a first metal layer, a first dielectric layer, a first upper electrode and a first protective layer. The first metal layer is disposed on a first surface of... Agent:

20110156207 - Mim capacitor with plate having high melting point: A method for producing an integrated device including an MIM capacitor. The method includes the steps of providing a functional substrate including functional circuits of the integrated device, forming a first conductive layer including a first plate of the capacitor on the functional substrate; the first plate has a first... Agent: Stmicroelectronics S.r.l.

20110156208 - Semiconductor device: The present invention provides a technology capable of providing a semiconductor device having an MIM structure capacitor with improved reliability. The capacitor has a lower electrode, a capacitor insulating film, and an upper electrode. The lower electrode is comprised of a metal film embedded in an electrode groove formed in... Agent: Renesas Electronics Corporation

20110156206 - Semiconductor device employing nitride floating capacitor (nfc): A semiconductor device includes: a substrate configured to include cell regions and a peripheral region around the cell regions; storage nodes arranged in each of the cell regions; a first support pattern configured in each cell region to support the storage nodes; and a second support pattern configured in the... Agent:

20110156209 - Multiple electrode layer backend stacked capacitor: In a disclosed embodiment, a stacked capacitor (100) has bottom, middle and top metal electrode layers (141A, 141B, 141C) interleaved with dielectric layers (142A, 142B) conformally disposed within holes (140A, 140B, 140C) in a protective overcoat or backend dielectric layer (110) over a top metal layer (115) of an integrated... Agent: Texas Instruments Incorporated

20110156210 - Semiconductor device: A semiconductor device according to embodiments of the invention includes an n−-type drift region; a p-type base region formed selectively in the surface portion of the drift region; an n+-type emitter region and a p+-type body region, both formed selectively in the surface portion of base region; and an n-type... Agent: Fuji Electric Holdings Co., Ltd.

20110156211 - Semiconductor structure for realizing esd protection circuit: The semiconductor structure of the present invention comprises: a P-well, a first N+ diffusion region, a first P+ diffusion region, a second P+ diffusion region, a first N-well, and a second N+ diffusion region. The semiconductor structure of the present invention comprises: a N-well, a first P+ diffusion region, a... Agent:

20110156213 - Method of manufacturing nitride substrate, and nitride substrate: A method of manufacturing a nitride substrate includes the following steps. Firstly, a nitride crystal is grown. Then, the nitride substrate including a front surface is cut from the nitride crystal. In the step of cutting, the nitride substrate is cut such that an off angle formed between an axis... Agent: Sumitomo Electric Industries Ltd.

20110156212 - Methods of fabricating semiconductor structures or devices using layers of semiconductor material having selected or controlled lattice parameters: Methods of fabricating semiconductor devices or structures include bonding a layer of semiconductor material to another material at a temperature, and subsequently changing the temperature of the layer of semiconductor material. The another material may be selected to exhibit a coefficient of thermal expansion such that, as the temperature of... Agent: S.o.i.tec Silicon On Insulator Technologies

20110156214 - Structure of thin nitride film and formation method thereof: Provided are a nitride thin film structure and a method of forming the same. If a nitride thin film is formed on a substrate that is not a nitride, many defects are generated by a difference in lattice constants between the substrate and the nitride thin film. Also, there is... Agent: Snu R&db Foundation

20110156216 - Silicon wafer and method for producing the same: o

20110156215 - Silicone wafer and production method therefor: A silicon wafer includes BMDs with a diagonal length of from 10 nm to 50 nm, and has a density of BMD which exists at a depth of 50 μm and deeper from the surface of the silicon wafer which is greater than or equal to 1×1011/cm3, and a ratio... Agent: Siltronic Ag

20110156218 - Chip package: A chip package is provided. The chip package includes a chip, having a plurality of conductive pads disposed along a periphery of the chip, wherein the conductive pads have a width. A seal ring includes a plurality of metal strips disposed within a space between the two adjacent conductive pads.... Agent:

20110156220 - Manufacturing method of semiconductor device and semiconductor device: A method to prevent contamination of the principal surface side in a process of grinding the back surface side of a semiconductor wafer. At an intersection of a scribe region of a semiconductor wafer whose back surface side is to be ground, a plurality of insulating layers is laminated over... Agent: Renesas Electronics Corporation

20110156217 - Power devices having reduced on-resistance and methods of their manufacture: A method for forming a support structure for supporting and handling a semiconductor wafer containing vertical FETs formed at the front surface thereof is provided. In one embodiment, a semiconductor wafer is provided having a front surface and a rear surface, wherein the front surface comprises one or more dies... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110156219 - Semiconductor device: A semiconductor device is disclosed which can prevent interlayer cracking of interlayer dielectric films while improving the adhesion between the interlayer dielectric films in a dicing process using a dicing blade. In a scribing line area, dummy wirings are formed respectively in a blade area through which a dicing blade... Agent: Renesas Electronics Corporation

20110156221 - Method for producing ceramic passivation layers on silicon for solar cell manufacture: The invention relates to a method for producing passivation layers on crystalline silicon by a) coating the silicon with a solution containing at least one polysilazane of the general formula (1): —(SiR′R″—NR′″)-n, wherein R′, R″, R′″ are the same or different and stand independently of each other for hydrogen or... Agent: Clariant Finance (bvi) Limited

20110156222 - Silicon wafer and manufacturing method thereof: Silicon wafers, are manufactured with which a desired strength and electric resistance of a semiconductor device can be obtained. A non-oxidizing heat treatment for oxygen out-diffusion is performed wherein the desired amount of oxygen is discharged from the surface layer of the silicon substrate. By this heat treatment for oxygen... Agent: Siltronic Ag

20110156223 - Structure and method to create stress trench: An integrated circuit (IC) chip is provided comprising at least one trench including a stress-inducing material which imparts a stress on a channel region of a device, such as a junction gate field-effect transistor (JFET) or a metal-oxide-semiconductor field-effect transistor (MOSFET). A related method is also disclosed.... Agent: International Business Machines Corporation

20110156224 - Circuit-substrate laminated module and electronic apparatus: A device that comprises a plurality of circuit elements on a substrate; a shielding element between at least two of the plurality of circuit elements; and a bonding element that electrically connects the shielding element to a grounding circuit of a semiconductor chip that is on the substrate.... Agent: Sony Corporation

20110156225 - Semiconductor device and method of manufacturing the same: A semiconductor device achieving both electromagnetic wave shielding property and reliability in a heating process upon mounting electronic components. In the semiconductor device, mount devices 5 and 6 mounted on a main surface of a circuit board 1 are provided, the mount devices 5 and 6 are electrically connected to... Agent: Renesas Electronics Corporation

20110156226 - Interposer and semiconductor device: An interposer and a semiconductor device including the interposer are provided, which can prevent thermal warpage of an insulative substrate thereof. The interposer is provided with a semiconductor chip in a semiconductor device andmay be disposed between the semiconductor chip and a mount board. The interposer includes: a substrate of... Agent: Rohm Co., Ltd.

20110156228 - Semiconductor device: A semiconductor device includes a structure in which a semiconductor element (chip) is mounted in a cavity formed in a wiring board with an adhesive interposed between the chip and a bottom surface of the cavity, and electrode terminals of the chip are connected via wires to wiring portions formed... Agent: Shinko Electric Industries Co., Ltd.

20110156229 - Semiconductor device and manufacturing method therefor: A technology enabling reduction of the size of a semiconductor device including a micro and a power MOSFET is provided. The semiconductor device is obtained by single packaging a first semiconductor chip with a micro formed therein and second semiconductor chips with a power MOSFET formed therein. This makes it... Agent: Renesas Electronics Corporation

20110156227 - Semiconductor package structure: A semiconductor package structure includes: a dielectric layer; a metal layer disposed on the dielectric layer and having a die pad and traces, the traces each including a trace body, a bond pad extending to the periphery of the die pad, and an opposite trace end; metal pillars penetrating the... Agent: Siliconware Precision Industries Co., Ltd.

20110156230 - Multi-stacked semiconductor dice scale package structure and method of manufacturing same: A multi-stack semiconductor dice assembly has enhanced board-level reliability and integrated electrical functionalities over a common package foot-print. The multi-stack semiconductor dice assembly includes a bottom die having a stepped upper surface. The stepped upper surface includes a base region and a stepped region, which is raised relative to the... Agent: Stmicroelectronics Asia Pacific Pte, Ltd.

20110156231 - Recessed and embedded die coreless package: Methods of forming a microelectronic packaging structure and associated structures formed thereby are described. Those methods may include forming a cavity in a plating material to hold a die, attaching the die in the cavity, forming a dielectric material adjacent the die, forming vias in the dielectric material adjacent the... Agent: Intel Corporation

20110156232 - Semiconductor memory device, semiconductor package and system having stack-structured semiconductor chips: A module is disclosed. In one embodiment, the module is a memory module including a first multichip package, the first multichip package including a first master chip and a first plurality of slave chips, and a second multichip package, the second multichip package including a second master chip and a... Agent:

20110156233 - Stack package: A stack package includes a first semiconductor chip possessing a first size and one or more second semiconductor chips possessing a second size greater than the first size. The first semiconductor chip has a first surface on which bonding pads are disposed, a second surface which faces away from the... Agent: Hynix Semiconductor Inc.

20110156234 - Self repairing ic package design: An integrated circuit package comprises a molding compound covering a semiconductor die. A healing substance is on the surface of the semiconductor die at an interface of the molding compound and the semiconductor die. The healing compound comprises a catalyst and a plurality of microcapsules containing a sealing compound. If... Agent: Stmicroelectronics Asia Pacific Pte. Ltd.

20110156235 - Flip chip package having enhanced thermal and mechanical performance: A flip chip semiconductor package is provided. In one embodiment, the flip chip semiconductor package comprises a first substrate having a first surface and a second surface opposite the first surface, a semiconductor chip mounted on the first surface of the first substrate by solder bumps, a thermally-conductive stiffener mounted... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110156236 - Thermally enhanced expanded wafer level package ball grid array structure and method of making the same: A thermally enhanced expanded wafer level ball grid array package. The expanded wafer level ball grid array package includes an integrated thermally conductive heat dissipater. In one embodiment the heat dissipater is positioned in close proximity to a non-active face of a die and is separated from the non-active face... Agent: Stmicroelectronics Asia Pacific Pte Ltd.

20110156237 - Fan-out chip scale package: A chip scale package has a semiconductor die having an array of die bond pads arranged with a bond pad density per unit area, embedded in a molded die support body having a surface supporting an array of conducting contacts, each of the contacts connected by an electrical lead to... Agent: Nxp B.v.

20110156239 - Method for manufacturing a fan-out embedded panel level package: A method for manufacturing a fan-out embedded panel-level package. Film having an adhesive on each side is applied to the non-active face of a plurality of semiconductor die while the die are still in wafer form. The die are singulated from the wafer and placed on a carrier, using the... Agent: Stmicroelectronics Asia Pacific Pte Ltd.

20110156240 - Reliable large die fan-out wafer level package and method of manufacture: A fan-out wafer level package includes a semiconductor die with contact pads positioned on a top surface. A fan-in redistribution layer positioned over the die includes contact pads in electrical communication with the first contact pads of the die. A buffer layer positioned over the fan-in layer includes a plurality... Agent: Stmicroelectronics Asia Pacific Pte. Ltd.

20110156238 - Semiconductor package having chip using copper process: A semiconductor package having chip using copper process is revealed. A chip using copper process is disposed on a substrate. The substrate has a core layer, a copper circuitry with connecting pads, a patterned diffusion barrier, and a solder mask. The copper circuitry is formed on the core layer. The... Agent:

20110156241 - Package substrate and method of fabricating the same: Disclosed herein are a package substrate and a method of fabricating the same. The package substrate includes a base part that includes a chip, a mold part surrounding the chip, and a connection unit formed inside the mold part to connect the chip to a terminal part formed on the... Agent:

20110156242 - Semiconductor package and method of manufacturing the same: There is provided a method of manufacturing a semiconductor package. The method includes: (a) providing a silicon wafer comprising a first surface and a second surface opposite to the first surface; (b) forming vias through the silicon wafer in its thickness direction; (c) forming wiring patterns on the first surface... Agent: Shinko Electric Industries Co., Ltd.

20110156243 - Semiconductor package: A semiconductor package is provided. The semiconductor package includes an organic substrate, a stiffness layer, and a chip subassembly. The stiffness layer is formed on the organic substrate. The chip subassembly is disposed on the stiffness layer. The chip subassembly includes at least a first chip, a second chip, and... Agent:

20110156244 - Heat sink and integrated circuit assembly using the same: An integrated circuit assembly includes a heat sink and a substrate coupled to the heat sink. The heat sink includes a base and a plurality of fins disposed on the base, the base has an intermediate portion and two side portions connected to the intermediate portion, the intermediate portion has... Agent: Star Technologies Inc.

20110156245 - Method and apparatus for cooling an integrated circuit: An integrated circuit, a method of operating the integrated circuit, and a method of fabricating the integrated circuit are disclosed. According to one of the broader forms of the invention, a method and apparatus involve an integrated circuit that includes a heat transfer structure having a chamber that has a... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110156246 - Semiconductor package and method for making the same: The present invention relates to a semiconductor package and a method for making the same. The semiconductor package includes a substrate, a first capacitor, a first protective layer, a first metal layer and a second protective layer. The substrate has at least one via structure. The first capacitor is disposed... Agent:

20110156247 - Semiconductor package and method for making the same: The present invention relates to a semiconductor package and a method for making the same. The semiconductor package comprises a substrate, a first metal layer, a first dielectric layer, a first upper electrode, a first protective layer, a second metal layer and a second protective layer. The substrate has at... Agent:

20110156248 - Semiconductor device and method for manufacturing the same: A semiconductor device includes: an integrated circuit having an electrode pad; a first insulating layer disposed on the integrated circuit; a redistribution layer including a plurality of wirings and disposed on the first insulating layer, at least one of the plurality of wirings being electrically coupled to the electrode pad;... Agent: Fujitsu Semiconductor Limited

20110156249 - Wafer-to-wafer stack with supporting pedestal: An electronic device having a stacked structure is provided. The electronic device includes a first electronic layer, a second electronic layer disposed on the first electronic layer, and at least a post. The first electronic layer has a first interface, and including a first substrate and a first device layer... Agent: Industrial Technology Research Institute

20110156250 - Flip-chip fan-out wafer level package for package-on-package applications, and method of manufacture: A flip-chip fan-out wafer level package for package-on-package applications includes a semiconductor die with solder bumps on an upper surface in a flip chip configuration. The die is inverted, with an upper surface facing an upper side of a redistribution layer, with the solder bumps in electrical contact with respective... Agent: Stmicroelectronics Asia Pacific Pte. Ltd.

20110156253 - Micro-bump structure: A dished micro-bump structure with self-aligning functions is provided. The micro-bump structure takes advantage of the central concavity for achieving the accurate alignment with the corresponding micro-bumps.... Agent: Industrial Technology Research Institute

20110156254 - Modified chip attach process: A process for assembling a package for a semiconductor device comprising reducing the stress in an inner dielectric layer during packaging by heating the die and the substrate to a temperature where a solder reflows, dropping to a temperature where a selected epoxy will cure, liquefying the epoxy, adding the... Agent:

20110156251 - Semiconductor package: The present invention relates to a semiconductor package. The semiconductor package includes a substrate, at least one chip, a plurality of conductive elements, a plurality of first conductors and a molding compound. The substrate has a plurality of first pads and a solder mask. The first pads are exposed to... Agent:

20110156252 - Semiconductor package having electrical connecting structures and fabrication method thereof: A semiconductor package having electrical connecting structures includes: a conductive layer having a die pad and traces surrounding the die pad; a chip; bonding wires; an encapsulant with a plurality of cavities having a depth greater than the thickness of the die pad and traces for embedding the die pad... Agent: Siliconware Precision Industries Co., Ltd.

20110156255 - Carbon nanotube-based filler for integrated circuits: A variety of characteristics of an integrated circuit chip arrangement with a chip and package-type substrate are facilitated. In various example embodiments, a carbon nanotube-filled material (110) is used in an arrangement between an integrated circuit chip (220, 340) and a package-type substrate (210, 350). The carbon-nanotube filled material is... Agent: Koninklijke Philips Electronics N.v.

20110156256 - Electromigration-resistant under-bump metallization of nickel-iron alloys for sn-rich solder bumps of pb-free flip-chip applications: A process comprises manufacturing an electromigration-resistant under-bump metallization (UBM) flip chip structure comprising a Cu layer by applying to the Cu layer a metallic reaction barrier layer comprising NiFe. The solder employed in the flip chip structure comprise substantially lead-free tin. A structure comprises a product produced by this process.... Agent: Sung K. Kang, Paul A. Lauro, Minhua Lu, Da-yuan Shih

20110156257 - Semiconductor device and method for manufacturing the same: A method for manufacturing a semiconductor device includes providing a substrate including pattern formed over the substrate and a first insulating layer formed over the pattern. A diffusion barrier layer is formed over the first insulation layer. A second insulating layer is formed over the diffusion barrier layer. The second... Agent: Hynix Semiconductor Inc.

20110156258 - Semiconductor device having through via and method for fabricating the same: In one embodiment, a semiconductor device may includes a through via disposed within a substrate with a diffusion barrier layer disposed over the through via and the substrate. An insulation layer may be disposed over the diffusion barrier layer, a metal interconnection layer disposed within the insulation layer over at... Agent: Hynix Semiconductor Inc.

20110156259 - Metal-to-contact overlay structures and methods of manufacturing the same: The present invention provides a semiconductor device with a metal-to-contact overlay structure. The semiconductor device includes a substrate, a dielectric layer on the substrate, a contact coupled to the substrate in the dielectric layer, a first conductive region on the contact in the dielectric layer, a dielectric sidewall on the... Agent: Macronix International Co., Ltd.

20110156260 - Pad structure and integrated circuit chip with such pad structure: An integrated circuit chip includes a substrate; a topmost metal layer overlying the substrate; and a pad in the topmost metal layer. A thickness of the pad is less than a thickness of the topmost metal layer.... Agent:

20110156265 - Electronic component and method of manufacturing the same: An electronic component includes a substrate, a functional element formed on the substrate, a plurality of terminals including a first terminal electrode connected to the functional element and a second terminal electrode layered on the first terminal electrode, and a feed line, one end of which is electrically connected to... Agent: Fujitsu Media Devices Limited

20110156261 - Integrated circuit package and method of making same: An integrated circuit package includes a first dielectric layer comprising a dielectric film having a first side and a second side, the first side having a plurality of contact locations and a plurality of non-contact locations. The package includes a plurality of components, each component having a first surface and... Agent:

20110156266 - Methods for forming through-substrate conductor filled vias, and electronic assemblies formed using such methods: Through substrate vias for back-side electrical and thermal interconnections on very thin semiconductor wafers without loss of wafer mechanical strength during manufacturing are provided by: forming desired device regions with contacts on the front surface of an initially relatively thick wafer; etching via cavities partly through the wafer in the... Agent: Freescale Semiconductor, Inc.

20110156263 - Semiconductor device: A semiconductor device may include, but is not limited to: a semiconductor substrate having an element formation region and a dicing region; an element layer over the element formation region and the dicing region; and a multi-layered wiring structure over the dicing region. The multi-layered wiring structure extends upwardly from... Agent: Elpida Memory, Inc.

20110156262 - Semiconductor device with buried gate and method for fabricating the same: A method for fabricating a semiconductor device includes forming landing plugs over a substrate, forming a trench by etching the substrate between the landing plugs, forming a buried gate to partially fill the trench, forming a gap-fill layer to gap-fill an upper side of the buried gate, forming protruding portions... Agent:

20110156264 - Semiconductor element built-in device: A semiconductor element built-in device includes: a first substrate having a first pad thereon; a semiconductor element on the first substrate; a second substrate having a second pad thereon and mounted on the first substrate via a solder terminal having a solder coated thereon; a resin layer provided between the... Agent: Shinko Electric Industries Co., Ltd.

20110156273 - Circuit substrate and method: Embodiments of the invention are concerned with semiconductor circuit substrates for use in a radiation detection device, said radiation detection device comprising a detector substrate having a plurality of detector cells arranged to generate charge in response to incident radiation, each of said detector cells including at least one detector... Agent: Ipl Intellectual Property Licensing Limited

20110156270 - Contact elements of semiconductor devices formed on the basis of a partially applied activation layer: When forming contact levels of sophisticated semiconductor devices, a superior bottom to top fill behavior may be accomplished by applying an activation material selectively in the lower part of the contact openings and using a selective deposition technique. Consequently, deposition-related irregularities, such as voids, may be efficiently suppressed even for... Agent:

20110156272 - Multilayered wiring substrate: A multilayered wiring substrate, comprising: a plurality of first main surface side connecting terminals arranged in a first main surface of a stack structure; and a plurality of second main surface side connecting terminals being arranged in a second main surface of the stack structure; wherein a plurality of conductor... Agent: Ngk Spark Plug Co., Ltd.

20110156271 - Semiconductor module: A semiconductor module having a second semiconductor package 200 mounted on a first semiconductor package 100, wherein the first semiconductor package 100 includes: pads 15 formed on the top surface of the first semiconductor package 100; external connection terminals 2 formed on the underside of the first semiconductor package 100,... Agent: Panasonic Corporation

20110156269 - Semiconductor package and stack semiconductor package having the same: A semiconductor package includes a semiconductor chip having a first region defined at a center portion of a first surface of the semiconductor chip, and having second and third regions defined on both sides of the first region, respectively. Bonding pads are disposed in the first region and a substrate... Agent: Hynix Semiconductor Inc.

20110156267 - Semiconductor process, semiconductor element and package having semiconductor element: The present invention relates to a semiconductor process, a semiconductor element and a package having a semiconductor element. The semiconductor element includes a base material and at least one through via structure. The base material has a first surface, a second surface, at least one groove and at least one... Agent:

20110156268 - Semiconductor process, semiconductor element and package having semiconductor element: The present invention relates to a semiconductor process, a semiconductor element and a package having a semiconductor element. The semiconductor process includes the following steps: (a) providing a semiconductor element including a silicon base material and at least one conductive via structure disposed in the silicon base material; (b) removing... Agent:

20110156274 - Semiconductor device: The present invention provides a semiconductor device capable of suppressing degradation in connection reliability due to the decrease in thickness of a conductive adhesive caused by the movement of a connecting plate in a semiconductor device to which a power transistor is mounted. A step is provided in the thin... Agent: Renesas Technology Corp.

20110156275 - Integrated circuit packaging system having planar interconnect and method for manufacture thereof: A method for manufacture of an integrated circuit packaging system includes: mounting an integrated circuit, having a planar interconnect, over a carrier with the planar interconnect at a non-active side of the integrated circuit and an active side of the integrated circuit facing the carrier; connecting the integrated circuit and... Agent:

20110156277 - Dicing tape-integrated film for semiconductor back surface: The present invention provides a dicing tape-integrated film for semiconductor back surface, which includes: a dicing tape including a base material and a pressure-sensitive adhesive layer provided on the base material; and a film for flip chip type semiconductor back surface provided on the pressure-sensitive adhesive layer, in which the... Agent: Nitto Denko Corporation

20110156280 - Dicing tape-integrated film for semiconductor back surface: The present invention provides a dicing tape-integrated film for semiconductor back surface, which includes: a dicing tape including a base material and a pressure-sensitive adhesive layer provided on the base material; and a film for flip chip type semiconductor back surface provided on the pressure-sensitive adhesive layer, in which a... Agent: Nitto Denko Corporation

20110156278 - Film for flip chip type semiconductor back surface: The present invention provides a film for flip chip type semiconductor back surface, which is to be formed on a back surface of a semiconductor element flip-chip connected on an adherend, the film including a wafer adhesion layer and a laser marking layer, in which the wafer adhesion layer has... Agent: Nitto Denko Corporation

20110156279 - Film for flip chip type semiconductor back surface: The present invention provides a film for flip chip type semiconductor back surface, which is to be formed on a back surface of a semiconductor element flip-chip connected on an adherend, the film including a wafer adhesion layer and a laser marking layer, in which the wafer adhesion layer has... Agent: Nitto Denko Corporation

20110156276 - Patch on interposer assembly and structures formed thereby: Methods of forming microelectronic structures are described. Embodiments of those methods include attaching a patch structure to an interposer by thermal compression bonding, forming an underfill around an array of interconnect structures disposed on a top surface of the interposer, curing the underfill, and then attaching a die to the... Agent:

20110156281 - Quad flat no lead (qfn) package: The present invention relates to a quad flat no lead (QFN) package is provided. In the invention, a plurality of first pads are disposed outside an extension area of a conductive circuit layer, and a plurality of second pads are disposed inside a die bonding area of the conductive circuit... Agent: Chipmos Technologies Inc.

20110156282 - Gate conductor structure: A gate conductor structure is provided having a barrier region between a N-type device and a P-type device, wherein the barrier region minimizes or eliminates cross-diffusion of dopant species across the barrier region. The barrier region comprises at least one sublithographic gap in the gate conductor structure. The sublithographic gap... Agent: International Business Machines Corporation

20110156283 - Use of die backside films to modulate eol coplanarity of thin packages while providing thermal capability and laser markability of packages: A microelectronic package comprises a die (110) having a front side (111) containing active circuitry (115) and a back side (112) opposite the front side and a film (120) on the back side of the die. The film has a thickness (121) of at least 20 micrometers, a Young's modulus... Agent:

20110156284 - Device and method for alignment of vertically stacked wafers and die: A device is provided that includes a first die having a first alignment structure that includes a plurality of first transmission columns arranged in a pattern and a second die positioned on the first die, the second die having a second alignment structure that includes a plurality of second transmission... Agent: Stmicroelectronics, Inc.

20110156285 - Integrated alignment and overlay mark, and method for detecting errors of exposed positions thereof: An integrated alignment and overlay mark for detecting the exposed errors of the photolithography process between a pre-layer and a current layer is disclosed. The integrated alignment and overlay mark includes an alignment mark and an overlay mark in the same shot region. The alignment mark is formed surrounding the... Agent: Inotera Memories, Inc.

20110156286 - Semiconductor device and manufacturing method thereof: A semiconductor device includes an alignment mark formed over a semiconductor substrate and an inhibition pattern arranged over the alignment mark with a pattern edge of the inhibition pattern located in a mark functional region of the alignment mark in order to inhibit the alignment mark being recognized as such... Agent: Fujitsu Semiconductor Limited

20110147693 - Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same: In some aspects, a memory cell is provided that includes (1) a steering element above a substrate; and (2) a reversible resistance-switching element coupled to the steering element, wherein the reversible resistance-switching element is selectively formed by: (a) forming a material layer on the substrate; (b) etching the material layer;... Agent:

20110147689 - Phase change memory device capable of reducing disturbance and fabrication method thereof: A phase change memory device capable of reducing disturbances between adjacent PRAM memory cells and a fabrication method are presented. The phase change memory device includes word lines, heating electrodes, an interlayer insulating layer, and a phase change lines. The word lines are formed on a semiconductor substrate and extend... Agent: Hynix Semiconductor Inc.

20110147690 - Phase change memory device having 3 dimensional stack structure and fabrication method thereof: A phase change memory device having a 3-D stack structure and a fabrication method for making the same are presented. The phase change memory device includes a semiconductor substrate, a word line structure and one or more phase change structures. The word line structure extends in one first direction on... Agent: Hynix Semiconductor Inc.

20110147691 - Semiconductor memory device using variable resistance element or phase-change element as memory device: A semiconductor memory device includes a first conductive line, a second conductive line, a cell unit, a silicon nitride film and a double-sidewall film. The first conductive line extends in a first direction. The second conductive line extends in a second direction crossing the first direction. The cell unit includes... Agent:

20110147692 - Variable resistance memory device and method of forming the same: Provided are a variable resistance memory device and a method of forming the same. The variable resistance memory device may include a substrate, a plurality of bottom electrodes on the substrate, and a first interlayer insulating layer including a trench formed therein. The trench exposes the bottom electrodes and extends... Agent:

20110147694 - Resistive memory device and method for fabricating the same: A resistive memory device includes a plurality of resistive units, each resistive unit including: a lower electrode formed over a substrate; a resistive layer formed over the lower electrode; and an upper electrode formed over the resistive layer, wherein edge parts of the lower and upper electrodes, which come in... Agent:

20110147695 - Fabricating current-confining structures in phase change memory switch cells: In one or more embodiments, methods of fabricating current-confining stack structures in a phase change memory switch (PCMS) cell are provided. One embodiment shows a method of fabricating a PCMS cell with current in an upper chalcogenide confined in the row and column directions. In one embodiment, methods of fabricating... Agent:

20110147696 - Resistive random access memory devices and resistive random access memory arrays having the same: A resistive random access memory (RRAM) devices and resistive random access memory (RRAM) arrays are provided, the RRAM devices include a first electrode layer, a variable resistance material layer formed of an oxide of a metallic material having a plurality of oxidation states, an intermediate electrode layer on the variable... Agent: Samsung Electronics Co., Ltd.

20110147697 - Isolation for nanowire devices: The present disclosure relates to the field of fabricating microelectronic devices. In at least one embodiment, the present disclosure relates to forming an isolated nanowire, wherein isolation structure adjacent the nanowire provides a substantially level surface for the formation of microelectronic structures thereon.... Agent:

20110147698 - Field emission device and method of forming the same: A field emission device is provided. The field emission device includes a first substrate including a gate electrode including gate lines respectively extending in first, second, and third direction and a cathode electrode including cathode lines respectively extending in the first, second, and third directions; a second substrate facing the... Agent: Nanopacific Inc.

20110147703 - Abbreviated epitaxial growth mode (agm) method for reducing cost and improving quality of leds and lasers: The use of an abbreviated GaN growth mode on nano-patterned AGOG sapphire substrates, which utilizes a process of using 15 nm low temperature GaN buffer and bypassing etch-back and recovery processes during epitaxy, enables the growth of high-quality GaN template on nano-patterned AGOG sapphire. The GaN template grown on nano-patterned... Agent: Lehigh University

20110147699 - Auger rate suppression in confined structures: The present invention is generally directed to a method of suppressing the Auger rate in confined structures, comprising replacing an abrupt confinement potential with either a smooth confinement potential or a confinement potential of a certain size found by increasing the confinement potential width until the Auger recombination rate undergoes... Agent:

20110147701 - Image display device: An image display device includes a display surface constituted of a plurality of pixels, each of the pixels having a light-emitting layer, a front panel arranged at the ambient light entering side relative to the light-emitting layer, and a structure layer arranged between the light-emitting layer and the front panel.... Agent: Canon Kabushiki Kaisha

20110147700 - Light emitting device, light emitting device package, method of manufacturing light emitting device and lighting system: A light emitting device may include a first conductive semiconductor layer, an active layer adjacent to the first conductive semiconductor layer and a second conductive semiconductor layer adjacent to the active layer. The active layer may include a first quantum well layer, a second quantum well layer and a barrier... Agent: Lg Electronics Inc.

20110147702 - Nitride based quantum well light-emitting devices having improved current injection efficiency: A III-nitride based device provides improved current injection efficiency by reducing thermionic carrier escape at high current density. The device includes a quantum well active layer and a pair of multi-layer barrier layers arranged symmetrically about the active layer. Each multi-layer barrier layer includes an inner layer abutting the active... Agent: Lehigh University

20110147704 - Semiconductor light-emitting device with passivation layer: A light-emitting device and method for the fabrication thereof. The device includes a substrate, a first doped semiconductor layer situated above the substrate, a second doped semiconductor layer situated above the first doped semiconductor layer, and a multi-quantum-well (MQW) situated between the first and the second doped semiconductor layer. The... Agent: Lattice Power (jiangxi) Corporation

20110147705 - Semiconductor light-emitting device with silicone protective layer: One embodiment of the present invention provides a semiconductor light-emitting device which includes: a substrate, a first doped semiconductor layer situated above the substrate, a second doped semiconductor layer situated above the first doped semiconductor layer, a multi-quantum-well (MQW) active layer situated between the first and the second doped semiconductor... Agent: Lattice Power (jiangxi) Corporation

20110147706 - Techniques and configurations to impart strain to integrated circuit devices: Embodiments of the present disclosure describe techniques and configurations to impart strain to integrated circuit devices such as horizontal field effect transistors. An integrated circuit device includes a semiconductor substrate, a first barrier layer coupled with the semiconductor substrate, a quantum well channel coupled to the first barrier layer, the... Agent:

20110147707 - Detection device, photodiode array, and method for manufacturing the same: The present invention provides an image pickup device used to capture an image of an object by receiving light in a near infrared region reflected from the object. The image pickup device includes semiconductor light-receiving elements each having a light-receiving layer with a band gap wavelength of 1.65 to 3.0... Agent: Sumitomo Electric Industries, Ltd.

20110147710 - Dual layer gate dielectrics for non-silicon semiconductor devices: Non-silicon metal-insulator-semiconductor (MIS) devices and methods of forming the same. The non-silicon MIS device includes a gate dielectric stack which comprises at least two layers of non-native oxide or nitride material. The first material layer of the gate dielectric forms an interface with the non-silicon semiconductor surface and has a... Agent:

20110147714 - Field-effect transistor and sensor based on the same: A field-effect transistor has at least one electrode disposed independently of source and drain electrodes and in direct contact with the surface of a semiconductor channel to form a schottky barrier, so that it is possible to easily control the schottky barrier.... Agent: Seoul University Research And Business Foundation

20110147708 - Increasing carrier injection velocity for integrated circuit devices: Embodiments of the present disclosure describe structures and techniques to increase carrier injection velocity for integrated circuit devices. An integrated circuit device includes a semiconductor substrate, a first barrier film coupled with the semiconductor substrate, a quantum well channel coupled to the first barrier film, the quantum well channel comprising... Agent:

20110147715 - Medium scale carbon nanotube thin film integrated circuits on flexible plastic substrates: The present invention provides device components geometries and fabrication strategies for enhancing the electronic performance of electronic devices based on thin films of randomly oriented or partially aligned semiconducting nanotubes. In certain aspects, devices and methods of the present invention incorporate a patterned layer of randomly oriented or partially aligned... Agent: Purdue Research Foundation

20110147711 - Non-planar germanium quantum well devices: Techniques are disclosed for forming a non-planar germanium quantum well structure. In particular, the quantum well structure can be implemented with group IV or III-V semiconductor materials and includes a germanium fin structure. In one example case, a non-planar quantum well device is provided, which includes a quantum well structure... Agent:

20110147712 - Quantum well transistors with remote counter doping: A quantum well device and a method for manufacturing the same are disclosed. In an embodiment, a quantum well structure comprises a quantum well region overlying a substrate and a remote counter doping comprising dopants of conductivity opposite to the conductivity of the charge carriers of the quantum well region.... Agent:

20110147709 - Signal control elements in ferromagnetic logic: A chain of field coupled nanomagnets includes at least one elements having substantially different anisotropy energy from that of the other nanomagnets. A signal can propagate from a first input nanomagnet having a relatively high anisotropy energy through the chain to an output nanomagnet. The output nanomagnet may have a... Agent: Globalfoundries Inc.

20110147713 - Techniques for forming contacts to quantum well transistors: Techniques are disclosed for providing a low resistance self-aligned contacts to devices formed in a semiconductor heterostructure. The techniques can be used, for example, for forming contacts to the gate, source and drain regions of a quantum well transistor fabricated in III-V and SiGe/Ge material systems. Unlike conventional contact process... Agent:

20110147732 - Benzofluoranthene derivative and organic electroluminescence element comprising same: c

20110147730 - Carbazole derivative, and light emitting element and light emitting device using the carbazole derivative: It is an object of the present invention to provide a material which is excellent in a hole injecting property and a hole transporting property, and to provide a light emitting element and a light emitting device using a material which is excellent in a hole injecting property and a... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110147731 - Condensed ring aromatic compound for organic light-emitting device and organic light-emitting device having the same: wherein R1 to R16 each independently represent a hydrogen atom, a halogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted aryloxy group, a substituted or unsubstituted amino group, a substituted or unsubstituted aryl group, or a substituted or unsubstituted heterocyclic group,... Agent: Canon Kabushiki Kaisha

20110147717 - Deuterated compounds for luminescent applications: This invention relates to deuterated compounds that are useful in electroluminescent applications. It also relates to electronic devices in which the active layer includes such a deuterated compound.... Agent: E. I. Du Pont De Nemours And Company

20110147719 - Electrically conductive polymer compositions: The present invention relates to electrically conductive compositions, and their use in electronic devices. The composition includes either (1) a deuterated electrically conductive polymer doped with a highly-fluorinated acid polymer; or (2) (a) a deuterated electrically conductive polymer doped with a non-fluorinated polymeric acid and (b) at least one highly-fluorinated... Agent: E. I. Du Pont De Nemours And Company

20110147718 - Electroactive composition and electronic device made with the composition: where T is (CR′)a, SiR2, S, SO2, PR, PO, PO2, BR, or R; R is the same or different at each occurrence and is an alkyl group or an ary group; R′ is the same or different at each occurrence and is selected H, D, or alkyl; a is an... Agent: E.i. Du Pont De Nemours And Company

20110147723 - Enhanced e-field sensing using negative capacitance fet subthreshold slope enhancement: In certain embodiments, a field effect transistor (FET) can include a substrate, a source electrode, a drain electrode, a ferroelectric material layer, a first gate electrode, and a second gate electrode to maintain an optimal polarization state of the ferroelectric material layer. In other embodiments, a FET can include a... Agent: Sri International

20110147720 - Novel quinoxaline derivatives and their use in organic light-emitting diode device: The present invention relates to novel quinoxaline derivatives and their use in an organic light-emitting diode device. The quinoxaline derivative is of luminescence and rigidity, can increase glass transition temperature (Tg) and has better thermal stability, and thus can be used as a hole transporting layer, a host or guest... Agent:

20110147716 - Oled with high efficiency blue light-emitting layer: The invention provides an OLED device comprising an anode, a cathode and a light-emitting layer located therebetween, said light-emitting layer comprising an anthracene host and a styrylamine blue light-emitting compound; and, located between the said light-emitting layer and the cathode, a first electron-transporting layer that is greater than 0.5 nm... Agent:

20110147727 - Oleds doped with phosphorescent compounds: Organic light emitting devices are disclosed which are comprised of a heterostructure for producing electroluminescence wherein the heterostructure is comprised of an emissive layer containing a phosphorescent dopant compound. For example, the phosphorescent dopant compound may be comprised of platinum octaethylporphine (PtOEP), which is a compound having the chemical structure... Agent:

20110147724 - Organic thin film transistor and method of manufacturing the same: There is provided an organic thin film transistor and a method of manufacturing the same. The organic thin film transistor includes: an insulating substrate on which a plurality of barrier ribs and a plurality of grooves partitioned by the barrier ribs are formed; source and drain electrodes each formed on... Agent: Sungkyunkwan University Foundation For Corporate Collaboration

20110147726 - Organic thin film transistor, method for manufacturing the same, display member using the organic thin film transistor, and display: An object of the present invention is to provide an organic thin film transistor a gate insulating film of which can be formed at a low temperature. The organic thin film transistor of the present invention includes a source electrode, a drain electrode, an organic semiconductor layer which becomes a... Agent: Sumitomo Chemical Company, Limited

20110147721 - Polarizing film for display device and organic light emitting diode (oled) display device including the same: A polarizing film includes an anti-glare layer that has a haze of 10 to 50%. An OLED display device includes a display panel including a device substrate on which one or more OLEDs are formed, and a polarizing film disposed at a viewing surface of the display panel. The polarizing... Agent: Samsung Mobile Display Co., Ltd

20110147722 - Semiconductor light emitting device comprising high performance resins: A semiconductor light emitting device comprising curable polyorganosiloxane compositions is provided where the compositions contain a 13th group elements of the periodic table. The cured polyorganosiloxane compositions may be catalyst-free, have increased stability, and can be used as encapsulation resin at a temperature far lower than 300° C., have excellent... Agent:

20110147728 - Spirofluorene derivative, material for light-emitting element, light-emitting element, light-emitting device, and electronic device: It is an object of the present invention to provide a material having a high Tg and a wide energy gap. The present invention provides a spirofluorene derivative represented by General Formula 1. (In the formula, R1 is any one of hydrogen, an alkyl group having 1 to 4 carbon... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110147729 - Stilbene derivatives, light-emitting element and light-emitting device: The present invention provides a novel substance having an excellent color purity of blue, a light-emitting element and a light-emitting device using the novel substance. A stilbene derivative has a structure shown by the general formula (1). In the general formula (1), R1 is hydrogen, an alkyl group having 1... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110147725 - Sulfonated polythiophenes comprising fused ring repeat units: A sulfonated polymer comprising a 3-substituted fused thienothiophene repeat unit, a composition comprising the polymer, a method of making the polymer, and a device comprising the polymer. The polymers can be used in hole injection or hole transport layers, or other applications in organic electronic devices.... Agent: Plextronics, Inc.

20110147740 - Display substrate, method of manufacturing the same: The present invention discloses a thin film transistor (TFT), a method for manufacturing the TFT, and a display substrate using the TFT that may prevent degradation of the characteristics of an oxide semiconductor contained in the TFT by blocking external light from entering a channel region of the oxide semiconductor.... Agent: Samsung Electronics Co., Ltd.

20110147737 - Semiconductor device: A first transistor including a channel formation region, a first gate insulating layer, a first gate electrode, and a first source electrode and a first drain electrode; a second transistor including an oxide semiconductor layer, a second source electrode and a second drain electrode, a second gate insulating layer, and... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110147738 - Semiconductor device and method for manufacturing the same: A transistor including an oxide semiconductor, which has good on-state characteristics, and a high-performance semiconductor device including a transistor capable of high-speed response and high-speed operation. In the transistor including an oxide semiconductor, oxygen-defect-inducing factors are introduced (added) into an oxide semiconductor layer, whereby the resistance of a source and... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110147739 - Semiconductor device and method for manufacturing the same: A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110147733 - Semiconductor device structure and method for manufacturing the same: A semiconductor device structure on a substrate and a manufacture method thereof is provided. The semiconductor device structure includes an oxide semiconductor transistor and a passivation layer containing free hydrogen. The semiconductor device structure is formed by following steps. A gate electrode is formed on the substrate. A gate dielectric... Agent: Au Optronics Corp.

20110147736 - Semiconductor device, measurement apparatus, and measurement method of relative permittivity: The field of an oxide semiconductor has been attracted attention in recent years. Therefore, the correlation between electric characteristics of a transistor including an oxide semiconductor layer and physical properties of the oxide semiconductor layer has not been clear yet. Thus, a first object is to improve electric characteristics of... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110147735 - Thin film transistor and method of forming the same: Provided are a thin film transistor and a method of forming the same. The thin film transistor includes: a substrate; a source electrode and a drain electrode on the substrate; an oxide active layer between the source electrode and the drain electrode; a gate electrode on one side of the... Agent: Electronics And Telecommunications Research Institute

20110147734 - Transistor, method of manufacturing transistor, and electronic device including transistor: Provided are a transistor, a method of manufacturing the transistor, and an electronic device including the transistor. The transistor may include a gate insulator of which at least one surface is treated with plasma. The surface of the gate insulator may be an interface that contacts a channel layer. The... Agent: Samsung Electronics Co., Ltd.

20110147741 - X-ray detector: An X-ray detector constructed as an exemplary embodiment of the present invention includes a semiconductor layer, a data line including a source electrode covering a first portion of the semiconductor layer, a drain electrode disposed opposite to the source electrode, a first lower electrode formed on the upper portion of... Agent: Samsung Mobile Display Co., Ltd.

20110147742 - Thin film field effect transistor with dual semiconductor layers: A thin film field effect transistor is disclosed which provides improved time-based channel stability. The field effect transistor includes first and second disordered semiconductor layers separated by an insulator. In an embodiment a carrier injection terminal is provided in a thin semiconductor layer closest to the gate terminal. An electric... Agent: Palo Alto Research Center Incorporated

20110147745 - Thin film transistor and manufacturing method thereof: An embodiment is a thin film transistor which includes a gate electrode layer, a gate insulating layer provided so as to cover the gate electrode layer; a first semiconductor layer entirely overlapped with the gate electrode layer; a second semiconductor layer provided over and in contact with the first semiconductor... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110147744 - Thin film transistor and method for manufacturing the same: An object is to increase the on-state current of a thin film transistor. A solution is to provide a projection in a back-channel portion of the thin film transistor. The projection is provided so as to be off a tangent in the back-channel portion between a source or a drain... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110147743 - Thin film transistor substrate and method for fabricating the same: The present invention relates to a thin film transistor substrate and a method for fabricating the same, which can shorten a process time, prevent a scratch from taking place at an alignment film, and increase black luminance. The thin film transistor substrate includes a thin film transistor formed on a... Agent:

20110147750 - Display device: A resin material having a small relative dielectric constant is used as a layer insulation film 114. The resin material has a flat surface. A black matrix or masking film for thin film transistors is formed thereon using a metal material. Such a configuration prevents the problem of a capacity... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110147748 - Display device and manufacturing method of the same: A display device and a fabricating method of the same are disclosed. The display device includes a first substrate comprising a display region defined in a center thereof and a non-display region defined in an outer area thereof, the display region comprising a thin film layer transistor array and the... Agent:

20110147747 - Display device and method of manufacturing the same: A display device includes a flexible panel and a cover member. The flexible panel includes a first substrate and a second substrate. The first substrate includes a first support layer in which an organic insulation layer and an inorganic insulation layer are stacked thereon, and a thin-film transistor and a... Agent:

20110147753 - Display device, copper alloy film for use therein, and copper alloy sputtering target: Disclosed is a Cu alloy film for a display device that has high adhesion to a glass substrate while maintaining a low electric resistance characteristic of Cu-based materials. The Cu alloy film is wiring in direct contact with a glass substrate on a board and contains 0.1 to 10.0 atomic... Agent: Kabushiki Kaisha Kobe Seiko Sho (kobe Steel, Ltd.)

20110147751 - Display panel substrate, display panel, method for manufacturing display panel substrate, and method for manufacturing display panel: A display panel substrate in which the width of a trace can be reduced without impairing a signal transfer capability of the trace. A display panel substrate (1) includes abase (12) that has a substantially semicircular cross-section in a direction perpendicular to a longitudinal direction of the base (12), and... Agent: Sharp Kabushiki Kaisha

20110147752 - Semiconductor device and manufacturing method thereof: A means of forming unevenness for preventing specular reflection of a pixel electrode, without increasing the number of process steps, is provided. In a method of manufacturing a reflecting type liquid crystal display device, the formation of unevenness (having a radius of curvature r in a convex portion) in the... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110147746 - Touch screen substrate, method of manufacturing the same, and display panel including the touch screen substrate: A touch screen substrate includes a base substrate, a first switching element and a first sensing element which senses infrared light. The first switching element includes a first switching gate electrode, a first active pattern disposed on the first switching gate electrode, a first switching source electrode disposed on the... Agent: Samsung Electronics Co., Ltd.

20110147749 - Transflective liquid crystal display panel and manufacturing method thereof: A method for manufacturing a transflective liquid crystal display panel includes providing an array substrate having a plurality of pixel regions, each of the pixel regions includes a device region, a transmission region and a reflection region defined therein; forming a first metal layer on the array substrate; patterning the... Agent:

20110147756 - Semiconductor device: A semiconductor device 10 according to the present invention includes an active layer 14 supported on a substrate 11 and having two channel regions 14c1, 14c2, a source region 14s, a drain region 14d, and an intermediate region 14m formed between the two channel regions 14c1, 14c2; a contact layer... Agent: Sharp Kabushiki Kaisha

20110147755 - Thin film transistor: A thin film transistor having favorable electric characteristics with high productively is provided. The thin film transistor includes a gate insulating layer covering a gate electrode, a semiconductor layer in contact with the gate insulating layer, an impurity semiconductor layer which is in contact with part of the semiconductor layer... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110147754 - Thin film transistor and manufacturing method thereof: Disclosed is a thin film transistor including: a gate insulating layer covering a gate electrode; a microcrystalline semiconductor region over the gate insulating layer; a pair of amorphous semiconductor region over the microcrystalline semiconductor; a pair of impurity semiconductor layers over the amorphous semiconductor regions; and wirings over the impurity... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110147758 - Active matrix liquid crystal display device: An conductive coating serves as a light shield film and is kept at a give voltage. A metal interconnection is located in the same layer as a source line and connected to the drain of a thin-film transistor. An interlayer insulating film is constituted of at least lower and upper... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110147757 - Array substrate of display device: An array substrate of a display device, the array substrate: a substrate having a first region and a second region spaced apart from the first region; a blocking layer located on the substrate; a first electrode located on the blocking layer in the second region; an insulating film located on... Agent: Samsung Mobile Display Co., Ltd.

20110147763 - Group iii nitride semiconductor multilayer structure and production method thereof: According to the present invention, an AlN crystal film seed layer having high crystallinity is combined with selective/lateral growth, whereby a Group III nitride semiconductor multilayer structure more enhanced in crystallinity can be obtained. The Group III nitride semiconductor multilayer structure of the present invention is a Group III nitride... Agent: Showa Denko K.k.

20110147759 - Group iii nitride semiconductor substrate and manufacturing method of the same: A Group III nitride semiconductor substrate is provided, with diameter of 25 mm or more and thickness of 250 μm or more, wherein in at least an outer edge side part of an outer edge part within 5 mm from an outer edge of the group III nitride semiconductor substrate,... Agent: Hitachi Cable, Ltd.

20110147762 - Integrated nitride and silicon carbide-based devices: Monolithic electronic devices are providing including a high bandgap layer. A first type of nitride device is provided on a first portion of the high bandgap layer, the first nitride device including first and second implanted regions respectively defining source and drain regions of the first type of nitride device.... Agent:

20110147760 - Semiconductor apparatus with thin semiconductor film: A semiconductor apparatus includes a substrate having at least one terminal, a thin semiconductor film including at least one semiconductor device, the thin semiconductor film being disposed and bonded on the substrate; and an individual interconnecting line formed as a thin conductive film extending from the semiconductor device in the... Agent:

20110147761 - Two-terminal switching devices and their methods of fabrication: Two-terminal switching devices characterized by high on/off current ratios and by high breakdown voltage are provided. These devices can be employed as switches in the driving circuits of active matrix displays, e.g., in electrophoretic, rotating element and liquid crystal displays. The switching devices include two electrodes, and a layer of... Agent: Cbrite Inc.

20110147765 - Dummy structure for isolating devices in integrated circuits: The present disclosure provides an integrated circuit. The integrated circuit includes a first operational device having a first transistor of a first composition; a second operational device having a second transistor of the first composition; and an isolation transistor disposed between the first and second transistors, the isolation transistor having... Agent: Taiwan Semiconductor Manufatcuring Company, Ltd.

20110147766 - Method of manufacturing silicon carbide semiconductor device: A method of manufacturing a silicon carbide semiconductor device is provided that includes a step of forming in a surface of a silicon carbide wafer of first conductivity type a first region of second conductivity type having a predetermined space thereinside by ion-implanting aluminum as a first impurity and boron... Agent: Mitsubishi Electric Corporation

20110147767 - Semiconductor device and manufacturing method of semiconductor device: There is provided a semiconductor device including an ohmic junction layer which is excellent in surface flatness and uniformity of composition in an interface with a semiconductor substrate and thus can give a sufficiently high adhesiveness with a Schottky junction layer. Such a semiconductor device includes an n type SiC... Agent: Showa Denko K.k.

20110147764 - Transistors with a dielectric channel depletion layer and related fabrication methods: A metal-insulator-semiconductor field-effect transistor (MISFET) includes a semiconductor layer with source and drain regions of a first conductivity type spaced apart therein. A channel region of a first conductivity type extends between the source and drain regions. A gate contact is on the channel region. A dielectric channel depletion layer... Agent: North Carolina State University

20110147768 - Organic light emitting device connection methods: A light panel includes a light source having a generally planar, light emitting surface and a perimeter edge. A backsheet is disposed in substantially parallel relation with the light emitting surface, and an electrical feed-through region extends through the backsheet at a location spaced inwardly from the perimeter. A generally... Agent: General Electric Company

20110147769 - Organic light emitting display and manufacturing method thereof: An organic light emitting display includes a gate electrode on a substrate, an active layer insulated from the gate electrode, source and drain electrodes that are insulated from the gate electrode and contact the active layer, an insulating layer between the active layer and the source and drain electrodes, a... Agent:

20110147770 - Organic light emitting diode display: An organic light emitting diode display includes: a substrate main body having a plurality of pixel regions, each including an opaque region and a transparent region; and organic light emitting diodes, thin film transistors, and conductive lines that are formed in the opaque region of the substrate main body. The... Agent: Samsung Mobile Display Co., Ltd.

20110147772 - Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods: Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods. A method for making an SSL device substrate in accordance with one embodiment of the disclosure includes forming multiple crystals carried by a support member, with the crystals having an orientation selected to facilitate formation of... Agent: Micron Technology, Inc.

20110147771 - Light emitting device, light emitting device package and lighting system: Disclosed are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes an oxide including gallium aluminum over a gallium oxide substrate, a nitride including gallium aluminum over the oxide including gallium aluminum, and a light emitting structure over the nitride including... Agent:

20110147775 - Light emitting device: According to one embodiment, a light emitting device includes a semiconductor light emitting element to emit a first light, a mounting member, first and second wavelength conversion layers and a transparent layer. The first wavelength conversion layer is provided between the element and the mounting member in contact with the... Agent: Kabushiki Kaisha Toshiba

20110147776 - Light emitting device: According to one embodiment, a light emitting device includes a semiconductor light emitting element, a mounting member, a first wavelength conversion layer, and a first transparent layer. The semiconductor light emitting element emits a first light. The semiconductor light emitting element is placed on the mounting member. The first wavelength... Agent: Kabushiki Kaisha Toshiba

20110147778 - Light emitting device: The light emitting device includes a semiconductor light emitting element including a semiconductor layer that emits primary light; and a fluorescent material layer disposed on the light emitting side of the semiconductor light emitting element, that absorbs a part of the primary light and emits secondary light having a wavelength... Agent: Nichia Corporation

20110147780 - Light emitting device and method of manufacture: A light emitting device includes a transparent conductive layer formed adjacent one of two semiconductor layers having an active layer therebetween. The transparent conductive layer includes first and second transparent conductive regions with different electrical conductivities. The difference in electrical conductivities controls an amount or flow rate of current into... Agent:

20110147779 - Light emitting diode package and method of fabricating the same: A light emitting diode (LED) package and a method of manufacturing a LED package is provided. The LED package includes a case having first and second lead frames disposed through the case; an LED chip disposed on the case, the LED chip having first and second electrodes directly connected to... Agent:

20110147782 - Optical device and method of manufacturing the same: Provided is an optical device which has an increased rate of an area occupied by an effective optical region to an light-transmissive substrate and less noise due to reflection from a peripheral end face of the light-transmissive substrate. The optical device includes a semiconductor substrate in which a light-receiving element... Agent: Panasonic Corporation

20110147777 - Organic light-emitting diode and light source device including same: An organic light-emitting diode in accordance with the present invention includes: a reflective electrode; an organic layer formed on the reflective electrode; a transparent electrode formed on the organic layer; a transparent resin layer formed on the transparent electrode; and an encapsulation glass formed on the transparent resin layer. The... Agent:

20110147781 - Package for light emitting device: The present invention discloses a light emitting device package, comprising: a metal base; an electrical circuit layer provided at an upper side of the metal base for providing a conductive path; a light emitting device mounted in a second region having a smaller thickness than a first region on the... Agent:

20110147783 - Red phosphor and forming method thereof for use in solid state lighting: There are described a red phosphor for use in solid state lighting and a method for preparing the same, which can be excited efficiently with near UV light, blue light and green light. The red phosphor for use in solid state lighting includes a Zn and Ti oxide as a... Agent:

20110147773 - Utilizing gradient refractive index films for light extraction and distribution control in oled: The present invention relates to an electro-optical device, wherein the device is a light source, for example an OLED. The OLED includes at least a substrate, a cathode, an anode, one or more organic light-emissive materials disposed between the cathode and anode, and a gradient refractive index film disposed on... Agent: General Electric Company

20110147774 - Wafer level led package structure for increasing light-emitting efficiency and heat-dissipating effect and method for manufacturing the same: A wafer level LED package structure includes a light-emitting unit, a reflecting unit, a first conductive unit and a second conductive unit. The light-emitting unit has a substrate body, a light-emitting body disposed on the substrate body, a positive and a negative conductive layers formed on the light-emitting body, and... Agent: Harvatek Corporation

20110147784 - Light emitting device with more uniform current spreading: A nitride light emitting device (LED) according to a non-limiting embodiment of the present invention may include a p-pad and an n-pad, wherein the p-pad and n-pad are disposed on opposite ends of the device. A first p-branch electrode and a second p-branch electrode may extend from the p-pad toward... Agent: Sharp Kabushiki Kaisha

20110147786 - Light-emitting device and manufacturing method thereof: Disclosed is a light emitting device and a method of manufacturing the same. The light emitting device includes a first conductive semiconductor layer, an active layer over the first conductive semiconductor layer, a second conductive semiconductor layer over the active layer, a current spreading layer over the second conductive semiconductor... Agent:

20110147787 - Organic light emitting diode and manufacturing method thereof: An organic light emitting diode (OLED) and a method for manufacturing the same are provided. In the OLED, patterned metal electrodes are positioned on one or more of upper and lower portions of a light emission layer to allow light generated from the light emission layer to emit to an... Agent: Electronics And Telecommunications Research Institute

20110147788 - Semiconductor device with a light emitting semiconductor die: A semiconductor device includes a light emitting semiconductor die mounted on at least one of first and second electrically conductive bonding pads, which are located on a first major surface of a substrate of the device. The light emitting semiconductor die has an anode and a cathode, which are electrically... Agent: Avago Technologies EcbuIP(singapore) Pte. Ltd.

20110147785 - Surface mount led and holder: A surface mount LED for attaching an LED to a substrate using a conventional reflow soldering technique. The surface mount LED according to this invention includes an LED and a holder. The LED includes a plurality of leads. The holder supports the LED and includes a plurality of feet arranged... Agent: Illinois Tool Works Inc

20110147789 - Organic light emitting diode device: Disclosed is an organic light emitting diode device including a substrate, an organic light emitting element disposed on the substrate, a polymer resin layer covering the organic light emitting element, and a getter disposed between the organic light emitting element and the polymer resin. The getter may include a moisture... Agent: Samsung Mobile Display Co., Ltd.,

20110147790 - Light emitting diode and fabricating method thereof: A light emitting diode and a fabricating method thereof are provided. The method including the steps of sequentially forming a first-type semiconductor layer, a light emitting layer and a second-type semiconductor layer with a first region and a second region on a substrate. Next, an ion implantation process is performed... Agent: United Microelectronics Corporation

20110147791 - Growth of coincident site lattice matched semiconductor layers and devices on crystalline substrates: Methods of fabricating a semiconductor layer or device and said devices are disclosed. The methods include but are not limited to providing a substrate having a crystalline surface with a known lattice parameter (a). The method further includes growing a crystalline semiconductor layer on the crystalline substrate surface by coincident... Agent: Alliance For Sustainable Energy, LLC

20110147792 - Heterocyclic compound, light-emitting element, light-emitting device, electronic device and lighting device: Objects of the present invention are to provide the following: a novel heterocyclic compound which can be used as a material in which a light-emitting substance of a light-emitting layer in a light-emitting element is dispersed; a novel heterocyclic compound having a high electron-transport property; a light-emitting element having high... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110147793 - Sige heterojunction bipolar transistor multi-finger structure: The present invention provides a multi-finger structure of a SiGe heterojunction bipolar transistor (HBT). It is consisted of plural SiGe HBT single cells. The multi-finger structure is in a form of C/BEBC/BEBC/.../C, wherein, C, B, E respectively stands for collector, base and emitter; CBEBC stands for a SiGe HBT single... Agent: Shanghai Hua Hong Nec Electronics Co., Ltd.

20110147794 - Structure and method for a silicon controlled rectifier (scr) structure for soi technology: A design structure is embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes a P+-N body diode and an N+-P body diode. The P+-N body diode and the N+-P body diode are laterally integrated.... Agent: International Business Machines

20110147795 - Materials for interfacing high-k dielectric layers with iii-v semiconductors: A group III chalcogenide layer for interfacing a high-k dielectric to a III-V semiconductor surface and methods of forming the same. A III-V QWFET includes a gate stack which comprises a high-K gate dielectric layer disposed on an interfacial layer comprising a group III chalcogenide. In an embodiment, a III-V... Agent:

20110147798 - Conductivity improvements for iii-v semiconductor devices: Conductivity improvements in III-V semiconductor devices are described. A first improvement includes a barrier layer that is not coextensively planar with a channel layer. A second improvement includes an anneal of a metal/Si, Ge or SiliconGermanium/III-V stack to form a metal-Silicon, metal-Germanium or metal-SiliconGermanium layer over a Si and/or Germanium... Agent:

20110147796 - Semiconductor device with metal carrier and manufacturing method: Semiconductor device including a metal carrier substrate. Above the carrier substrate a first semiconductor layer of Alx1Gay1Inz1N (x1+y1+z1=1, x1≧0, y1≧0, z1≧0) is formed. A second semiconductor layer of Alx2Gay2Inz2N (x2+y2+z2=1, x2>x1, y2≧0, z2≧0) is arranged on the first semiconductor layer and a gate region is arranged on the second semiconductor... Agent: Infineon Technologies Austria Ag

20110147797 - Structure of a phemt transistor capable of nanosecond switching: A method for fabricating a transistor and the resulting transistor is disclosed. The method generally includes steps (A) to (E). Step (A) may form a high mobility layer. The high mobility layer is generally configured to carry a two-dimensional electron gas. Step (B) may form a planar layer on the... Agent:

20110147799 - High on-state breakdown heterojunction bipolar transistor: A heterojunction bipolar transistor (HBT) is provided with an improved on-state breakdown voltage VCE. The improvement of the on-state breakdown voltage for the HBT improves the output power characteristics of the HBT and the ability of the HBT to withstand large impedance mismatch (large VSWR). The improvement in the on-state... Agent: Microlink Devices, Inc.

20110147800 - Semiconductor device including conductive lines with fine line width and method of fabricating the same: A semiconductor device comprises a semiconductor substrate including a first core region and a second core region between which a cell array region is interposed, a first conductive line and a second conductive line extending to the first core region across the cell array region, and a third conductive line... Agent: Samsung Electronics Co., Ltd.

20110147801 - Three-dimensional semiconductor device and method of fabricating the same: Provided are a three-dimensional semiconductor device and a method of fabricating the same. The three-dimensional semiconductor device may include a mold structure for providing gap regions and an interconnection structure including a plurality of interconnection patterns disposed in the gap regions. The mold structure may include interlayer molds defining upper... Agent:

20110147803 - Gas sensor and flip-chip method for its manufacture: A sensor element is described that includes at least one semiconductor component having a gas-sensitive layer which is attached to a substrate by the flip-chip method, the gas-sensitive layer facing the substrate and a supply arrangement being provided to supply a gas to be examined to the gas-sensitive layer. The... Agent: Robert Bosch Gmbh

20110147802 - Sensor: A sensor configured to sense an external event including: a first component having a first impedance that changes when the external event occurs and being connected between a reference voltage node and an output node wherein the output node is configured to provide, when the external event occurs, a feedback... Agent: Nokia Corporation

20110147804 - Drive current enhancement in tri-gate mosfets by introduction of compressive metal gate stress using ion implantation: A semiconductor device comprises a fin and a metal gate film. The fin is formed on a surface of a semiconductor material. The metal gate film formed on the fin and comprises ions implanted in the metal gate film to form a compressive stress within the metal gate. In one... Agent:

20110147805 - Semiconductor device and manufacturing method thereof: A semiconductor device includes an insulator layer, and an n-channel MIS transistor having an n channel and a pMIS transistor having a p channel which are formed on the insulator layer, wherein the n channel of the n-channel MIS transistor is formed of an Si layer having a uniaxial tensile... Agent: Kabushiki Kaisha Toshiba

20110147806 - Double-gated transistor memory: Memory cells are constructed from double-gated four terminal transistors having independent gate control. DRAM cells may use one, two or three transistors. Single transistor cells are constructed either with or without a bit storage capacitor, and both NAND- and NOR-type Non-Volatile NVRAM cells, as well as Ferroelectric FeRAM cells, are... Agent: American Semiconductor, Inc.

20110147807 - Single transistor memory with immunity to write disturb: Memory cells are constructed from double-gated four terminal transistors having independent gate control. DRAM cells using one transistor to implement a Ferroelectric FeRAM are described. Top gates provide conventional access while independent bottom gates provide control to optimize memory retention for given speed and power parameters as well as to... Agent: American Semiconductor, Inc.

20110147808 - Asymmetric junction field effect transistor: A junction field effect transistor (JFET) in a semiconductor substrate includes a source region, a drain region, a channel region, an upper gate region, and a lower gate region. The lower gate region is electrically connected to the upper gate region. The upper and lower gate regions control the current... Agent: International Business Machines Corporation

20110147809 - Forming a carbon containing layer to facilitate silicide stability in a silicon germanium material: A method includes forming a silicon germanium layer, forming a layer comprising carbon and silicon on a top surface of the silicon germanium layer, forming a metal layer above the layer comprising carbon and silicon, and performing a thermal treatment to convert at least the layer comprising carbon and silicon... Agent:

20110147810 - Method of fabricating strained structure in semiconductor device: The present disclosure provides a semiconductor device that includes a semiconductor substrate, a gate structure disposed on a portion of the substrate, and strained structures disposed at either side of the portion of the substrate and formed of a semiconductor material different from the semiconductor substrate. The portion of the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110147812 - Polish to remove topography in sacrificial gate layer prior to gate patterning: Techniques are disclosed for fabricating FinFET transistors (e.g., double-gate, trigate, etc). A sacrificial gate material (such as polysilicon or other suitable material) is deposited on fin structure, and polished to remove topography in the sacrificial gate material layer prior to gate patterning. A flat, topography-free surface (e.g., flatness of 50... Agent:

20110147813 - Semiconductor device and method for fabricating the same: A method for fabricating a semiconductor device includes: forming a fin-type semiconductor region on a substrate; and introducing an n-type impurity into at least a side of the fin-type semiconductor region by a plasma doping process, thereby forming an n-type impurity region in the side of the fin-type semiconductor region.... Agent:

20110147815 - Semiconductor device and production method thereof: Disclosed is a semiconductor device wherein device characteristics are improved by applying a strong stress to a channel region. The semiconductor device includes a semiconductor substrate, a gate insulating film formed over a first plane of the semiconductor substrate, a gate electrode formed over the gate insulating film, a gate... Agent: Renesas Electronics Corporation

20110147814 - Semiconductor device manufacturing method and semiconductor device: A semiconductor device includes a vertical type semiconductor element formed by using a silicon substrate, a P type impurity diffusion layer being formed at a back surface of the silicon substrate. The surface of the P type impurity diffusion layer is wet etched to expose a single silicon crystal surface... Agent: Renesas Electronics Corporation

20110147811 - Two-dimensional condensation for uniaxially strained semiconductor fins: Techniques are disclosed for enabling multi-sided condensation of semiconductor fins. The techniques can be employed, for instance, in fabricating fin-based transistors. In one example case, a strain layer is provided on a bulk substrate. The strain layer is associated with a critical thickness that is dependent on a component of... Agent:

20110147816 - Spin torque magnetic integrated circuits and devices therefor: Spin torque magnetic integrated circuits and devices therefor are described. A spin torque magnetic integrated circuit includes a first free ferromagnetic layer disposed above a substrate. A non-magnetic layer is disposed above the first free ferromagnetic layer. A plurality of write pillars and a plurality of read pillars are included,... Agent:

20110147817 - Semiconductor component having an oxide layer: Semiconductor component having an oxide layer. One embodiment includes a first semiconductor region and a second semiconductor region. An oxide layer is arranged between the first and second semiconductor region. The first semiconductor region and the oxide layer form a first semiconductor-oxide interface. The second semiconductor region and the oxide... Agent: Infineon Technologies Austria Ag

20110147818 - Nonvolatile semiconductor memory device: A nonvolatile semiconductor memory device includes: a substrate; a memory multilayer body with a plurality of insulating films and electrode films alternately stacked therein, the memory multilayer body being provided on a memory array region of the substrate; a semiconductor pillar buried in the memory multilayer body and extending in... Agent: Kabushiki Kaisha Toshiba

20110147820 - Non-volatile memory cell having a heating element and a substrate-based control gate: The number of times that a non-volatile memory (NVM) can be programmed and erased is substantially increased by utilizing a localized heating element that anneals the oxide that is damaged by tunneling charge carriers when the NVM is programmed and erased. The program and erase voltages are also reduced when... Agent:

20110147821 - Non-volatile two-transistor programmable logic cell and array layout: A two-transistor non-volatile memory cell is formed in a semiconductor body. A memory-transistor well is disposed within the semiconductor body. A switch-transistor well is disposed within the semiconductor body and is electrically isolated from the memory transistor well. A memory transistor including spaced-apart source and drain regions is formed within... Agent: Actel Corporation

20110147819 - Semiconductor device: p-type wells are provided within an n-type embedded well of a semiconductor substrate lying in an area for forming a flash memory, in a state of being isolated from one another. A capacitance section, a data write/erase charge injection/discharge section and a data read MIS•FET are disposed in each of... Agent: Renesas Electronics Corporation

20110147822 - Semiconductor memory device and method for manufacturing the same: A semiconductor memory device has a semiconductor substrate, a plurality of word lines formed at predetermined intervals on the semiconductor substrate, each word line having a gate insulating film, a charge storage layer, a first insulating film, and a controlling gate electrode which are stacked in order, and including a... Agent: Kabushiki Kaisha Toshiba

20110147826 - Methods of forming memory cells: Some embodiments include methods of utilizing polysilazane in forming non-volatile memory cells. The memory cells may be multi-level cells (MLCs). The polysilazane may be converted to silicon nitride, silicon dioxide, or silicon oxynitride with thermal processing and exposure to an ambient that contains one or both of oxygen and nitrogen.... Agent: Micron Technology, Inc.

20110147825 - Nonvolatile memory devices including deep and high density trapping layers: A charge trap nonvolatile memory device includes a gate electrode on a substrate; a charge trapping layer between the gate electrode and the substrate, the charge trapping layer having trap sites configured to trap charges; a charge tunneling layer between the trapping layer and the semiconductor substrate; and a charge... Agent: Samsung Electronics Co., Ltd.

20110147824 - Semiconductor devices and methods for fabricating the same: In semiconductor devices and methods of manufacture, a semiconductor device comprises a substrate of semiconductor material extending in a horizontal direction. A plurality of interlayer dielectric layers are on the substrate. A plurality of gate patterns are provided, each gate pattern between a neighboring lower interlayer dielectric layer and a... Agent: Samsung Electronics Co., Ltd.

20110147823 - Vertical channel type nonvolatile memory device and method for fabricating the same: A method for fabricating a vertical channel type nonvolatile memory device includes forming alternately a plurality of interlayer dielectric layers and a plurality of conductive layers over a substrate, forming a trench having a plurality of recesses on a surface of the trench by etching the plurality of interlayer dielectric... Agent:

20110147827 - Flash memory with partially removed blocking dielectric in the wordline direction: The present disclosure relates generally to the fabrication of non-volatile memory. In at least one embodiment, the present disclosure relates to forming a layered blocking dielectric which has a portion thereof removed in the wordline direction.... Agent:

20110147828 - Semiconductor device having doped epitaxial region and its methods of fabrication: Embodiments of the present invention describe a epitaxial region on a semiconductor device. In one embodiment, the epitaxial region is deposited onto a substrate via cyclical deposition-etch process. Cavities created underneath the spacer during the cyclical deposition-etch process are backfilled by an epitaxial cap layer. The epitaxial region and epitaxial... Agent:

20110147829 - Semiconductor device and fabrication method for the same: The semiconductor device includes: a first base layer (12); a drain layer (10) disposed on the back side surface of the first base layer (12); a second base layer (16) formed on the surface of the first base layer (12); a source layer (18) formed on the surface of the... Agent: Rohm Co., Ltd.

20110147831 - Method for replacement metal gate fill: An exemplary embodiment of a method for forming a gate for a planar-type or a finFET-type transistor comprises forming a gate trench that includes an interior surface. A first work-function metal is formed on the interior surface of the gate trench, and a low-resistivity material is deposited on the first... Agent:

20110147830 - Method of forming a self-aligned charge balanced power dmos: Self-aligned charge balanced semiconductor devices and methods for forming such devices are disclosed. One or more planar gates are formed over a semiconductor substrate of a first conductivity type. One or more deep trenches are etched in the semiconductor self-aligned to the planar gates. The trenches are filled with a... Agent: Alpha And Omega Semiconductor Incorporated

20110147832 - Semiconductor device and method for fabricating the same: A method for fabricating a semiconductor device, the method comprising: forming a mask pattern over a semiconductor substrate including a device isolation film; etching the semiconductor substrate with the mask pattern as a barrier to form a recess having a semi-circular shape; filling a sacrificial material in the semi-circular shaped... Agent: Hynix Semiconductor Inc.

20110147833 - Semiconductor device and method for forming the same: A semiconductor device includes a semiconductor substrate including an active area defined by an device isolation region, a buried gate formed on both side walls of a trench formed in the semiconductor substrate, and a storage node contact which is buried between the buried gates, and is connected to the... Agent: Hynix Semiconductor Inc.

20110147834 - Semiconductor device and method of fabricating the same: A semiconductor device includes a semiconductor substrate, an impurity region in the semiconductor substrate, and a conductive layer contacting a top surface of the impurity region and at least a side surface of the impurity region.... Agent: Elpida Memory, Inc.

20110147835 - Semiconductor devices having reduced gate-drain capacitance: Embodiments of a semiconductor device include a semiconductor substrate having a first surface and a second surface opposed to the first surface, a trench formed in the semiconductor substrate and extending from the first surface partially through the semiconductor substrate, a gate electrode material deposited in the trench, and a... Agent: Freescale Semiconductor, Inc.

20110147836 - Charged balanced devices with shielded gate trench: This invention discloses a semiconductor power device disposed on a semiconductor substrate includes a plurality of deep trenches with an epitaxial layer filling said deep trenches and a simultaneously grown top epitaxial layer covering areas above a top surface of said deep trenches over the semiconductor substrate. A plurality of... Agent:

20110147837 - Dual work function gate structures: A semiconductor chip having a transistor is described. The transistor having a gate electrode disposed over a gate dielectric. The gate electrode comprised of first gate material disposed on the gate dielectric and second gate material disposed on the gate dielectric. The first gate material being different than the second... Agent:

20110147838 - Tunnel field effect transistors: Tunnel field effect devices and methods of fabricating tunnel field effect devices are described. In one embodiment, the semiconductor device includes a first drain region of a first conductivity type disposed in a first region of a substrate, a first source region of a second conductivity type disposed in the... Agent: Infineon Technologies Ag

20110147839 - Semiconductor device and method for manufacturing the same: Multi-gate metal oxide silicon transistors and methods of making multi-gate metal oxide silicon transistors are provided. The multi-gate metal oxide silicon transistor contains a bulk silicon substrate containing one or more convex portions between shallow trench regions; one or more dielectric portions over the convex portions; one or more silicon... Agent: Toshiba America Electronic Components, Inc.

20110147840 - Wrap-around contacts for finfet and tri-gate devices: A semiconductor device comprises a substrate and a semiconductor body formed on the substrate. The semiconductor body comprises a source region; and a drain region. The source region or the drain region, or combinations thereof, comprises a first side surface, a second side surface, and a top surface. The first... Agent:

20110147841 - Semiconductor device and manufacturing method of the same: A semiconductor device comprises: a channel region of a transistor formed in a predetermined region of silicon layer formed on insulation film; a gate electrode formed on the channel region via gate insulation film; and source/drain regions formed in the silicon layer thicker than said channel region located out of... Agent: Kabushiki Kaisha Toshiba

20110147842 - Multi-gate semiconductor device with self-aligned epitaxial source and drain: A channel strained multi-gate transistor with low parasitic resistance and method of manufacturing the same. A gate stack may be formed over a semiconductor fin having a gate-coupled sidewall height (Hsi), an etch rate controlling dopant may be implanted into a source/drain region of the semiconductor fin adjacent to the... Agent:

20110147843 - Semiconductor component and method for producing a semiconductor component: A semiconductor component includes at least one field effect transistor disposed along a trench in a semiconductor region and has at least one locally delimited dopant region in the semiconductor region. The at least one locally delimited dopant region extends from or over a pn junction between the source region... Agent: Infineon Technologies Ag

20110147850 - Carbon and nitrogen doping for selected pmos transistors on an integrated circuit: A method of forming an integrated circuit (IC) including a core and a non-core PMOS transistor includes forming a non-core gate structure including a gate electrode on a gate dielectric and a core gate structure including a gate electrode on a gate dielectric. The gate dielectric for the non-core gate... Agent: Texas Instruments Incorporated

20110147849 - Integrated circuit with electrostatically coupled mos transistors and method for producing such an integrated circuit: m

20110147846 - Method for incorporating impurity element in epi silicon process: The present disclosure provides a method of fabricating a semiconductor device that includes forming a plurality of fins, the fins being isolated from each other by an isolation structure, forming a gate structure over a portion of each fin; forming spacers on sidewalls of the gate structure, respectively, etching a... Agent: Taiwan Semiconductor Manufacturing Company, Ltd

20110147847 - Methods and apparatus to reduce layout based strain variations in non-planar transistor structures: The present disclosure relates to the field of fabricating microelectronic devices. In at least one embodiment, the present disclosure relates to forming isolation structures in strained semiconductor bodies of non-planar transistors while maintaining strain in the semiconductor bodies.... Agent:

20110147848 - Multiple transistor fin heights: The present disclosure relates to the field of fabricating microelectronic devices. In at least one embodiment, the present subject matter relates to forming transistor fins of differing heights to obtain a performance improvement for a given type of integrated circuit within the microelectronic device.... Agent:

20110147845 - Remote doped high performance transistor having improved subthreshold characteristics: Devices comprising, and a method for fabricating, a remote doped high performance transistor having improved subthreshold characteristics are disclosed. In one embodiment a field-effect transistor includes a channel layer configured to convey between from a source portion and a drain portion of the transistor when the transistor is in an... Agent:

20110147844 - Semiconductor device with reduced surface field effect and methods of fabrication the same: Embodiments of the present invention describe a semiconductor device implementing the reduced-surface-field (RESURF) effect. The semiconductor device comprises a source/drain region having a plurality of isolation regions interleaved with source/drain extension regions. A gate electrode is formed on the semiconductor device, where the gate electrode includes gate finger elements formed... Agent:

20110147852 - Low noise and high performance lsi device, layout and manufacturing method: In semiconductor devices in which both NMOS devices and PMOS devices are used to perform in different modes such as analog and digital modes, stress engineering is selectively applied to particular devices depending on their required operational modes. That is, the appropriate mechanical stress, i.e., tensile or compressive, can be... Agent: Samsung Electronics Co., Ltd.

20110147851 - Method for depositing gate metal for cmos devices: A semiconductor device comprises a substrate, a channel region, and a gate formed in association with the channel region. In one exemplary embodiment, the gate comprises a first material that is formed void free on an interior surface of a gate trench of the gate. A width of the gate... Agent:

20110147853 - Method of forming an electrical fuse and a metal gate transistor and the related electrical fuse: The present invention provides a method of integrating an electrical fuse process into a high-k/metal gate process. The method simultaneously forms a dummy gate stack of a transistor and a dummy gate stack of an e-fuse; and simultaneously removes the polysilicon of the dummy gate stack in the transistor region... Agent: United Microelectronics Corporation

20110147854 - Indium, carbon and halogen doping for pmos transistors: A method of forming an integrated circuit (IC) having at least one PMOS transistor includes performing PLDD implantation including co-implanting indium, carbon and a halogen, and a boron specie to establish source/drain extension regions in a substrate having a semiconductor surface on either side of a gate structure including a... Agent: Texas Instruments Incorporated

20110147855 - Dual silicide flow for cmos: A method for forming a semiconductor device decouples NMOS and PMOS silicide processing and thereby allows independent optimization of at least one characteristic of both NMOS and PMOS devices, and eliminates constraints of using the same silicide process for both NMOS and PMOS, which limits the degree to which the... Agent:

20110147856 - Semiconductor device and method for fabricating the same: A fin-type semiconductor region (103) is formed on a substrate (101), and then a resist pattern (105) is formed on the substrate (101). An impurity is implanted into the fin-type semiconductor region (103) by a plasma doping process using the resist pattern (105) as a mask, and then at least... Agent:

20110147857 - Semiconductor device: A semiconductor device includes: a high dielectric constant gate insulating film formed on an active region in a substrate; a gate electrode formed on the high dielectric constant gate insulating film; and an insulating sidewall formed on each side surface of the gate electrode. The high dielectric constant gate insulating... Agent: Panasonic Corporation

20110147858 - Metal gate structure of a field effect transistor: The invention relates to integrated circuit fabrication, and more particularly to a Field Effect Transistor with a low resistance metal gate electrode. An exemplary structure for a gate electrode for a Field Effect Transistor comprises a lower portion formed of a first metal material having a recess and a first... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110147861 - Mems switch and fabrication method: A MEMS switch (1, 81), and methods of fabricating thereof, the switch comprising: a sealed cavity (24); and a membrane (26); wherein the sealed cavity (24) is defined in part by the membrane (26); and the membrane is a 5 metallic membrane (26), for example consisting of a single type... Agent: Nxp B.v.

20110147860 - Micromechanical structure comprising a mobile part having stops for out-of-plane displacements of the structure and its production process: Process for producing a micromechanical structure comprising a substrate and a stack of at least two layers arranged on the substrate, a mobile part formed in the stack and a fixed part relative to the substrate formed in the stack, and an opposite surface formed between the fixed part and... Agent: Commissariat A L'energie Atomique Et Aux Ene Alt

20110147859 - Semiconductor device and method of manufacturing the same: A semiconductor device includes a base substrate made of silicon, a cap substrate and a leading electrode having a metal part. The base substrate has base semiconductor regions being insulated and separated from each other at a predetermined portion of a surface layer thereof. The cap substrate is bonded to... Agent: Denso Corporation

20110147862 - Micromechanical component having an inclined structure and corresponding manufacturing method: In a micromechanical component having an inclined structure and a corresponding manufacturing method, the component includes a substrate having a surface; a first anchor, which is provided on the surface of the substrate and which extends away from the substrate; and at least one cantilever, which is provided on a... Agent:

20110147863 - Semiconductor device and manufacturing method of the same: A semiconductor device includes: a sensor element having a plate shape with a surface and including a sensor structure disposed in a surface portion of the sensor element; and a plate-shaped cap element bonded to the surface of the sensor element. The cap element has a wiring pattern portion facing... Agent: Denso Corporation

20110147864 - Method for manufacturing a micromechanical diaphragm structure having access from the rear of the substrate: A method for manufacturing a micromechanical diaphragm structure having access from the rear of the substrate includes: n-doping at least one contiguous lattice-type area of a p-doped silicon substrate surface; porously etching a substrate area beneath the n-doped lattice structure; producing a cavity in this substrate area beneath the n-doped... Agent:

20110147865 - Integrated hybrid hall effect transducer: A Hall effect transducer in a semiconductor wafer comprises a first layer of semiconducting material, a second layer of semiconducting material, and a contact structure configured to provide a path for electrical current to pass through the second layer. The second layer has higher electron hole mobility than the first... Agent: Polar Semiconductor, Inc.

20110147866 - Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element: A method of fabricating a spin-current switched magnetic memory element includes providing a wafer having a bottom electrode, forming a plurality of layers, such that interfaces between the plurality of layers are formed in situ, in which the plurality of layers includes a plurality of magnetic layers, at least one... Agent: International Business Machines Corporation

20110147867 - Method of vertically mounting an integrated circuit: A method of mounting a first integrated circuit (102, 500, 704) on one of a circuit board (300, 700) or a second integrated circuit (706), the first integrated circuit (102, 500, 704) formed over a substrate (104) and having a surface (119) opposed to the substrate (104) and a side... Agent: Everspin Technologies, Inc.

20110147868 - Semiconductor device: In a multi-core semiconductor device, a data bus between CPUs or the like consumes a larger amount of power. By provision of a plurality of CPUs which transmit data by a backscattering method of a wireless signal, a router circuit which mediates data transmission and reception between the CPUs or... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110147869 - Integrated infrared sensors with optical elements, and methods: An infrared (IR) radiation sensor device (27) includes an integrated circuit radiation sensor chip (1A) including first (7) and second (8) temperature-sensitive elements connected within a dielectric stack (3) of the chip, the first temperature-sensitive element (7) being more thermally insulated from a substrate (2) than the second temperature-sensitive element... Agent: Texas Instruments Incorporated

20110147872 - Optical device, electronic device, and method of manufacturing the same: An optical device includes a semiconductor device, a light receiving part formed on the main surface of the semiconductor device, and a transparent board laminated above the main surface of the semiconductor device, with an adhesive material interposed between the transparent board and the main surface of the semiconductor device.... Agent: Panasonic Corporation

20110147870 - Photodetector with valence-mending adsorbate region and a method of fabrication thereof: According to an embodiment, a photodetector is provided, including a detector region, a first contact region forming an interface with the detector region, and a first valence mending adsorbate region between the first contact region and the detector region.... Agent:

20110147871 - Semiconductor device and method of manufacturing the same: A semiconductor device includes: a substrate including an imaging area and having a first main surface and a second main surface; an electrode formed on the first main surface; an external electrode formed on the second main surface; a conductive portion which is formed in a through hole penetrating the... Agent: Panasonic Corporation

20110147873 - Optical semiconductor device, and optical pickup device and electronic device using the optical semiconductor device: A semiconductor substrate is bonded to a glass board in a peripheral portion of the semiconductor substrate by an adhesive layer. A hollow region is formed in a portion surrounded by the semiconductor substrate, the glass board, and the adhesive layer. In the hollow region, reinforcing adhesive layers are formed... Agent: Panasonic Corporation

20110147874 - Photodiode isolation in a photonic integrated circuit: Consistent with the present disclosure, a current blocking layer is provided between output waveguides carrying light to be sensed by the photodiodes in a balanced photodetector, and the photodiodes themselves. Preferably, the photodiodes are provided above the waveguides and sense light through evanescently coupling with the waveguides. In addition, the... Agent: Infinera Corporation

20110147875 - Image sensor with well bounce correction: An image sensor includes a pixel array having photoactive pixels and dark reference pixels. The photoactive pixels can be configured in a sub-array within the pixel array. Well contacts are only placed along opposing sides or edges of the sub-array of photoactive pixels or along opposing sides or edges of... Agent:

20110147876 - Solid-state imaging device, electronic module and electronic apparatus: A solid-state imaging device including an imaging area formed of a plurality of pixels arrayed in a two-dimensional matrix is provided. The solid-state imaging device includes: a photoelectric conversion portion including a charge accumulation region provided on a semiconductor substrate; a read transistor for reading electric charges from the photoelectric... Agent: Sony Corporation

20110147877 - Multi-band, reduced-volume radiation detectors and methods of formation: A broadband radiation detector includes a first layer having a first type of electrical conductivity type. A second layer has a second type of electrical conductivity type and an energy bandgap responsive to radiation in a first spectral region. A third layer has the second type of electrical conductivity type... Agent: Raytheon Company

20110147878 - High quantum efficiency optical detectors: An optical detector includes a detector surface operable to receive light, a depleted field region coupled to the underside of the detector surface, a charge collection node underlying the depleted field region, an active pixel area that includes the portion of the depleted field region above the charge collection node... Agent: Raytheon Company

20110147879 - Wafer structure to reduce dark current: A wafer structure for an image sensor includes a substrate that has a given conductivity type, a given dopant concentration, and a given concentration of oxygen. An intermediate epitaxial layer is formed over the substrate. The intermediate epitaxial layer has the same conductivity type and the same, or substantially the... Agent:

20110147880 - Power semiconductor device with new guard ring termination design and method for producing same: A power semiconductor device, such as a power diode, and a method for producing such a device, are disclosed. The device includes a first layer of a first conductivity type, a second layer of a second conductivity type arranged in a central region on a first main side of the... Agent: Abb Technology Ag

20110147881 - Hybrid substrate with improved isolation and simplified method for producing a hybrid substrate: A hybrid substrate comprises first and second active areas made from semiconductor materials laterally offset from one another and separated by an isolation area. The main surfaces of the isolation area and of the first active area form a plane. The hybrid substrate is obtained from a source substrate successively... Agent: Stmicroelectronics (crolles 2) Sas

20110147882 - Semiconductor device and method for fabricating the same: A semiconductor device includes an interlayer dielectric with a single-layer structure having a plurality of pores. The porosity of the interlayer dielectric per unit volume varies in a thickness direction.... Agent: Panasonic Corporation

20110147883 - Semiconductor body with a buried material layer and method: Disclosed is a method for forming a buried material layer in a semiconductor body, and a semiconductor arrangement including a buried material layer.... Agent: Infineon Technologies Austria Ag

20110147884 - Contacting and filling deep-trench-isolation with tungsten: Electrically isolated, deep trench isolation (DTI) structures, are formed in a wafer, and a portion of the DTI structures are converted to electrically connected structures to provide a shielding function, or to provide connection to deep buried layers. In one aspect, DTI structures include a polysilicon filling over a liner... Agent: Koninklijke Philips Electronics N.v.

20110147885 - Formation of improved soi substrates using bulk semiconductor wafers: The present invention relates to a semiconductor-on-insulator (SOI) substrate having one or more device regions. Each device region comprises at least a base semiconductor substrate layer and a semiconductor device layer with a buried insulator layer located therebetween, while the semiconductor device layer is supported by one or more vertical... Agent: International Business Machines Corporation

20110147886 - Semiconductor device with fuse and method for fabricating the same: A method for fabricating a semiconductor with a fuse includes providing a substrate, forming an insulation layer over the substrate, forming a polysilicon hard mask to form a metal contact over the insulation layer, forming a first mask pattern to form a fuse over the polysilicon hard mask, and removing... Agent: Hynix Semiconductor Inc.

20110147891 - Capacitor and a method of manufacturing the same: A capacitor (110), wherein the capacitor (110) comprises a capacitor dielectric (112) comprising a dielectric matrix (114) of a first value of permittivity, and a plurality of nanoclusters (116) of a second value of permittivity which is larger than the first value of permittivity which are at least partially embedded... Agent: Nxp B.v.

20110147888 - Methods to form memory devices having a capacitor with a recessed electrode: Methods to form memory devices having a MIM capacitor with a recessed electrode are described. In one embodiment, a method of forming a MIM capacitor with a recessed electrode includes forming an excavated feature defined by a lower portion that forms a bottom and an upper portion that forms sidewalls... Agent:

20110147890 - Mim capacitor structure having penetrating vias: The semiconductor device according to the present invention includes a plurality of capacitance elements. Each capacitance element has a structure obtained by holding a capacitance film made of an insulating material between first and second electrodes made of a metallic material. The first and second electrodes are so arranged as... Agent: Rohm Co., Ltd.

20110147889 - Semiconductor device and method of manufacturing semiconductor device: A semiconductor device includes an insulating film over a silicon substrate, the insulating film having an opening and a contact plug in the opening, the contact plug having a first top that is lower than an upper face of the insulating film.... Agent: Elpida Memory, Inc.

20110147887 - Stack capacitor of memory device and fabrication method thereof: The invention provides a method for forming a stack capacitor of a memory device, including providing a substrate, forming a patterned sacrificial layer with a plurality of first openings over the substrate, conformally forming a first conductive layer on the patterned sacrificial layer and in the first openings, forming a... Agent: Nanya Technology Corporation

20110147892 - Bipolar transistor with pseudo buried layers: A structure and fabrication method for a bipolar transistor with shallow trench isolation (STI) comprises a collector formed by implanting first electric type impurity in active area; pseudo buried layers at the bottom of STI at both sides of active area by implanting heavy dose of first electric type impurity;... Agent:

20110147893 - Bipolar transistors with hump regions: By providing a novel bipolar device design implementation, a standard CMOS process can be used unchanged to fabricate useful bipolar transistors and other bipolar devices having adjustable properties by partially blocking the P or N well doping used for the transistor base. This provides a hump-shaped base region with an... Agent: Freescale Semiconductor, Inc.

20110147894 - Low capacitance semiconductor device: A semiconductor device includes a diode, a passivation layer and a conductive layer. The diode includes an epitaxial layer on a semiconductor substrate, and first and second diode contacts on different planes. The passivation layer has a planar top surface, and includes multiple consecutive layers of a benzocyclobutene (BCB) material... Agent: Avago Technologies WirelessIP(singapore) Pte. Ltd.

20110147895 - Apparatus and method for controlling semiconductor die warpage: A semiconductor die has through silicon vias arranged to reduce warpage. The through silicon vias adjust the coefficient of thermal expansion of the semiconductor die, permit substrate deformation, and also relieve residual stress. The through silicon vias may be located in the edges and/or corners of the semiconductor die. The... Agent: Qualcomm Incorporated

20110147896 - Cluster jet processing method, semiconductor element, microelectromechanical element, and optical component: A method for processing a sample using an electrically neutral reactive cluster is provided. The surface of a sample is processed by jetting out a mixed gas that is composed of a reactive gas and a gas with a boiling point lower than that of the reactive gas from a... Agent: Kyoto University

20110147898 - Method for dicing a semiconductor wafer, a chip diced from a semiconductor wafer, and an array of chips diced from a semiconductor wafer: A method for dicing a semiconductor wafer, including: cutting a reference slot in a back main surface of the wafer; cutting a back slot in the back main surface, the back slot positioned with respect to the reference slot; determining a desired location for a chip edge with respect to... Agent: Xerox Corporation

20110147897 - Offset field grid for efficient wafer layout: Techniques are provided for efficient wafer layout, which include the use of an offset grid to optimize use of available wafer space. As such, the number of identical die that can be fabricated on the wafer can be increased, relative to a standard perpendicular grid. By adding additional registration marks,... Agent:

20110147899 - Integrated circuit package system employing device stacking: A method of manufacturing an integrated circuit packaging system includes: providing an inner lead and an outer lead, the inner lead having an inner peripheral side with a non-linear contour; forming a bump contact, having a groove in and a mesa from the inner lead or the outer lead, the... Agent:

20110147900 - Dielectric layer for flash memory device and method for manufacturing thereof: The present disclosure is related to a dielectric layer comprising a rare-earth aluminate (RExAl2-xO3 with 0<x<2) and having a perovskite crystalline structure, wherein the rare-earth aluminate comprises a rare-earth element having an atomic number higher than or equal to 63 and lower than or equal to 71. The disclosure also... Agent: Imec

20110147902 - Integrated circuit comprising light absorbing adhesive: The invention relates to a structure 20 comprising a substrate 12, a chip 16 bonded to the substrate by means of a bonding adhesive, wherein the bonding adhesive comprises light absorbing and/or light reflecting particles for protecting the chip from the ambient light. The adhesive may be used to fill... Agent: Polymer Vision Limited

20110147901 - Integrated circuit packaging system with package stacking and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes forming a lead frame including providing a tie bar plate, forming conductive columns on the tie bar plate, forming a dielectric layer on the conductive columns, applying a conductive shield layer on the dielectric layer, and exposing the conductive... Agent:

20110147903 - Leadframe circuit and method therefor: An integrated circuit leadframe device supports various chip arrangements. As consistent with various embodiments, a leadframe includes a plurality of banks of conductive integrated circuit chip connectors. Each bank has a plurality of conductive strips respectively having an end portion, the end portions of each of the strips in the... Agent:

20110147905 - Semiconductor device and method of manufacturing the same: In a semiconductor element, upper through-hole conductor portions and lower through-hole conductor portions are formed such that pore size A of the joint surface of the upper through-hole conductor portion and the lower through-hole conductor portion is smaller than pore size B of the upper through-hole conductor portion on the... Agent: Panasonic Corporation

20110147904 - Semiconductor device, electronic apparatus using the semiconductor device, and method of manufacturing the semiconductor device: This invention provides a semiconductor device with increased moisture resistance. The semiconductor device includes: a semiconductor substrate; an optical element provided in a front surface of the semiconductor substrate; a light-transmissive substrate provided above the front surface of the semiconductor substrate; an adhesive layer provided between the front surface of... Agent: Panasonic Corporation

20110147907 - Active plastic bridge chips: A system for proximity communication between semiconductor chips includes a package assembly. The package assembly includes a plurality of bridge circuits made of organic or plastic semiconductor material. A plurality of base chips are assembled to the package assembly. The package assembly positions and aligns the plurality of base chips... Agent: Sun Microsystems, Inc.

20110147906 - Integrated circuit packaging system with embedded interconnect and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing an integrated circuit with an adhesive attached thereto; connecting the integrated circuit and a plated interconnect pad; attaching an embedded interconnect to the plated interconnect pad; and forming an encapsulation, having an encapsulation first side and an encapsulation... Agent:

20110147910 - Method for stacking die in thin, small-outline package: Several embodiments of microelectronic device packaging configurations with lead frames without downsets are disclosed herein. In one embodiment, the configuration includes a pair of microelectronic dies with active surfaces facing one another, and a lead frame positioned between the dies. The lead frame has no downset and extends from between... Agent: Micron Technology, Inc.

20110147908 - Module for use in a multi package assembly and a method of making the module and the multi package assembly: The module comprises a first substrate and at least one chip mounted on the first substrate. A second substrate is mounted to the first substrate and has an opening therein. The opening is lined with the at least one chip. The second substrate is overmolded and the first substrate is... Agent:

20110147909 - Semicondcutor chip stack and manufacturing method thereof: A semiconductor chip stack includes a first chip and a second chip. The first chip includes a first circuit formed in the first chip with a first integration density, and the second chip includes a second circuit in the second chip with a second integration density smaller than the first... Agent:

20110147911 - Stackable circuit structures and methods of fabrication thereof: Stackable circuit structures and methods of fabrication are provided employing first level metallization directly on a chips-first layer(s), which includes: a chip(s), each with a pad mask over its upper surface and openings exposing its contact pads; electrically conductive structures; and structural dielectric material surrounding the side surfaces of the... Agent: Epic Technologies, Inc.

20110147912 - Methods and apparatuses to stiffen integrated circuit package: A dam stiffener for a package substrate is presented. In an embodiment, the dam stiffener comprises a thermally curable polymer, and is simultaneously cured with the underfill material to act as stiffener to the substrate. In another embodiment, a curable reservoir material can be dispensed to fill the space between... Agent:

20110147914 - Clad solder thermal interface material: A clad solder thermal interface material is described. In one example the material has a a first layer of solder having a melting temperature lower than a temperature of a particular solder reflow furnace, a second layer of solder clad to the first layer of solder, the second layer having... Agent:

20110147913 - Microelectronic package and method for a compression-based mid-level interconnect: A microelectronic package includes first substrate (120) having first surface area (125) and second substrate (130) having second surface area (135). The first substrate includes first set of interconnects (126) having first pitch (127) at first surface (121) and second set of interconnects (128) having second pitch (129) at second... Agent:

20110147915 - Combined power mesh transition and signal overpass/underpass: A zipper structure includes a first contiguous full-dense-mesh (FDM) array of a first supply in top metal and a second contiguous FDM array of a second supply in top-1 metal, a third contiguous FDM array of the second supply in top metal and a fourth contiguous FDM array of the... Agent: Sun Microsystems, Inc.

20110147918 - Electronic device and method of producing the same: An electronic device includes a wiring board; a semiconductor device arranged at an upper side of the wiring board with an electrically conductive member being arranged therebetween; a covering member arranged at an upper side of the semiconductor device; and a supporting member arranged at a lower side of the... Agent: Fujitsu Limited

20110147917 - Integrated circuit package with embedded components: This document discusses, among other things, a semiconductor die package having a first and a second discrete components embedded into a dielectric substrate. An integrated circuit (IC) die is surface mounted on a first side of the dielectric substrate. The semiconductor die package includes a plurality of conductive regions on... Agent: Fairchild Semiconductor Corporation

20110147916 - Semiconductor chip device with solder diffusion protection: Various methods and apparatus for establishing thermal pathways for a semiconductor device are disclosed. In one aspect, a method of manufacturing is provided that includes providing a first semiconductor chip that has a substrate and a first active circuitry portion extending a first distance into the substrate. A barrier is... Agent:

20110147919 - Window ball grid array (bga) semiconductor packages: Embodiments of the present disclosure provide window ball grid array semiconductor packages. A semiconductor package includes a substrate having (i) a first surface, (ii) a second surface that is opposite to the first surface, and (iii) an opening formed between the first surface of the substrate and the second surface... Agent:

20110147920 - Apparatus and method for embedding components in small-form-factor, system-on-packages: According to various aspects of the present disclosure, an apparatus is disclosed that includes a small form factor mobile platform including a system-on-package architecture, the system-on-package architecture arranged as a stack of layers including: a first layer having a first conformable material; a second layer having a second conformable material;... Agent:

20110147921 - Flange for semiconductor die: A semiconductor package includes a curved body and a plurality of semiconductor die. The curved body includes first and second opposing end regions and an intermediate center region. The curved body has a first inflection point at the center region, a second inflection point at the first end region and... Agent: Infineon Technologies North America Corp.

20110147925 - Pre-soldered leadless package: The invention relates to a method of manufacturing a semiconductor device, the method comprising: i) providing a substrate carrier comprising a substrate layer and a patterned conductive layer, wherein the patterned conductive layer defines contact pads; ii) partially etching the substrate carrier using the patterned conductive layer as a mask... Agent: Nxp B.v.

20110147927 - Semiconductor device and method for fabricating the same: A semiconductor device includes a semiconductor chip having an element formation surface on which at least one element is formed and including a plurality of electrode pads formed on the element formation surface, an interconnect substrate having a principal surface facing the element formation surface of the semiconductor chip and... Agent: Panasonic Corporation

20110147926 - Semiconductor device and method of forming the device using sacrificial carrier: A semiconductor device includes a first semiconductor die or component having a plurality of bumps, and a plurality of first and second contact pads. In one embodiment, the first and second contact pads include wettable contact pads. The bumps are mounted directly to a first surface of the first contact... Agent: Stats Chippac, Ltd.

20110147922 - Structures and methods to reduce maximum current density in a solder ball: Structures and methods to reduce maximum current density in a solder ball are disclosed. A method includes forming a contact pad in a last wiring level and forming a plurality of wires of the contact pad extending from side edges of the contact pad to respective ones of a plurality... Agent: International Business Machines Corporation

20110147923 - Surface mounting integrated circuit components: An electronic apparatus may include a first component solder bonded to a second component. The first component may be, for example, an integrated circuit. The first component may have an array of metallic protrusions. Those protrusions may be coupled to circuit elements within said first component. The second component may... Agent:

20110147924 - Wiring substrate and method of manufacturing the same: A wiring substrate includes an insulating layer, a wiring layer buried in the insulating layer, and a connection pad connected to the wiring layer via a via conductor provided in the insulating layer and in which at least a part is buried in an outer surface side of the insulating... Agent: Shinko Electric Industries Co., Ltd.

20110147931 - Lead frame land grid array with routing connector trace under unit: A package includes a first plated area, a second plated area, a die attached to the first plated area, and a bond coupling the die to the second plated area. The package further includes a molding encapsulating the die, the bond, and the top surfaces of the first and second... Agent: Utac Thai Limited

20110147928 - Microelectronic assembly with bond elements having lowered inductance: Microelectronic assemblies can have multiple conductive bond elements, e.g., bond wires, or a lead bond and a bond wire, extending between a pair of a substrate contact and a chip contact. E.g., a first bond wire can have ends joined to the contacts of the chip and substrate. A second... Agent: Tessera Research LLC

20110147930 - Semiconductor component of semiconductor chip size with flip-chip-like external contacts: A semiconductor component and a method for its production in semiconductor chip size, can have a semiconductor chip, which has external contacts of the semiconductor component that are arranged in the manner of a flip-chip on its active upper side. The semiconductor chip can be encapsulated by a plastic compound... Agent: Infineon Technologies Ag

20110147929 - Through mold via polymer block package: Methods for forming an integrated circuit chip package having through mold vias in a polymer block, and such packages are described. For example, a first interconnect layer may be formed on a molded polymer block, wherein the first interconnect layer comprises first interconnects through a first polymer layer and to... Agent:

20110147932 - Contact-based encapsulation: An electrical connection between two chips includes an IC pad on a first chip, an IC pad on a second chip, a first barrier metal over the IC pad of the first chip, a second barrier metal over the IC pad of the second chip, a malleable electrically conductive metal,... Agent:

20110147934 - Metal plugged substrates with no adhesive between metal and polyimide: In a method and apparatus for fabricating a semiconductor device having a flexible tape substrate, a hole is punched in the flexible tape substrate. The flexible tape substrate includes a metal layer attached to a polyimide layer without an adhesive there between. A cover is placed on the metal layer... Agent: Texas Instruments Incorporated

20110147935 - Method and system for binding halide-based contaminants: A method and apparatus are presented for reducing halide-based contamination within deposited titanium-based thin films. Halide adsorbing materials are utilized within the deposition chamber to remove halides, such as chlorine and chlorides, during the deposition process so that contamination of the titanium-based film is minimized. A method for regenerating the... Agent: Micron Technology, Inc.

20110147933 - Multiple surface finishes for microelectronic package substrates: Multiple surface finishes are applied to a substrate for a microelectronics package by applying a first surface finish to connection pads of a first area of the substrate masking the first area of the substrate without masking a second area of the substrate, applying a second different surface finish to... Agent:

20110147938 - Conductive via hole and method for forming conductive via hole: Provided is a technology for forming a conductive via hole to implement a three dimensional stacked structure of an integrated circuit. A method for forming a conductive via hole according to an embodiment of the present invention comprises: filling inside of a via hole structure that is formed in one... Agent: Electronics And Telecommunications Research Institute

20110147937 - Method of manufacturing semiconductor device and semiconductor device: In one exemplary embodiment, a method of manufacturing a semiconductor device is disclosed in which a damascene interconnect is formed above an underlying insulating film. The method includes forming an interconnect insulating film above the underlying insulating film such that a film density of the interconnect insulating film is relatively... Agent:

20110147936 - Semiconductor device and damascene structure: The present invention provides a semiconductor device, including a silicon-containing material, a conductive layer deposited on the silicon-containing material, and a diffusion barrier layer interposed between the silicon-containing material and the conductive layer, wherein the diffusion barrier layer contains a rare earth scandate. The present invention further provides a damascene... Agent: National Taiwan Unversity Of Science & Technology

20110147939 - Method of fabricating ultra-deep vias and three-dimensional integrated circuits using ultra-deep vias: A method of forming a high aspect ratio via opening through multiple dielectric layers, a high aspect ratio electrically conductive via, methods of forming three-dimension integrated circuits, and three-dimensional integrated circuits. The methods include forming a stack of at least four dielectric layers and etching the first and third dielectric... Agent: International Business Machines Corporation

20110147940 - Electroless cu plating for enhanced self-forming barrier layers: Methods and an apparatus are described for an integrated circuit within which an electroless Cu plated layer having an oxygen content is formed on the top of a seed layer comprising Cu and Mn. The integrated circuit is then exposed to a sufficient high temperature to cause the self-formation of... Agent:

20110147941 - Semiconductor apparatus and manufacturing method thereof: A semiconductor apparatus with a penetrating electrode having a high aspect ratio is manufactured with a low-temperature process. A first electrode 3 and a second electrode 6 of a semiconductor substrate 1 that are provided at the front and rear surface sides, respectively, are electrically connected by a conductive object... Agent: Canon Kabushiki Kaisha

20110147942 - Method of manufacturing semiconductor memory device and semiconductor memory device: A method of manufacturing a semiconductor memory device of an embodiment includes: after forming a first interconnection layer and a memory cell layer above a semiconductor substrate, forming first lines by forming first grooves extending in first direction; forming a thin film on the side walls of the first grooves;... Agent: Kabushiki Kaisha Toshiba

20110147943 - Wafer level surface passivation of stackable integrated circuit chips: An electrically insulative conformal coating is applied at least to the active (front) side and one or more sidewalls of the die during wafer processing. Also, a die has an electrically insulative conformal coating applied to at least the active (front) side and sidewalls. Also, assemblies include a stack of... Agent: Vertical Circuits, Inc.

20110147948 - Forming method and structure of porous low-k layer, interconnect process and interconnect structure: A structure of a porous low-k layer is described, comprising a bottom portion and a body portion of the same atomic composition, wherein the body portion is located on the bottom portion, and the bottom portion has a density higher than the density of the body portion. An interconnect structure... Agent: United Microelectronics Corp.

20110147944 - Planarising damascene structures: Manufacturing a damascene structure involves: forming a sacrificial layer (20) on a substrate (10) to protect an area around a recess (30) for the damascene structure, forming a barrier layer (40) in the recess, and in electrical contact with the sacrificial layer, forming the damascene structure (50) in the recess,... Agent: Koninklijke Philips Electronics N.v.

20110147947 - Semiconductor device and method for fabricating the same: A semiconductor device includes an ELK film formed on a semiconductor substrate, a SiN film formed on the ELK film, and a plurality of interconnects formed in the ELK film and the SiN film to be located substantially at an equal height. The plurality of interconnects are provided in a... Agent: Panasonic Corporation

20110147945 - Semiconductor device capable of suppressing generation of cracks in semiconductor chip during manufacturing process: A semiconductor device includes a chip stacked body where a plurality of semiconductor chips are stacked, and penetration electrodes respectively formed in the semiconductor chips are electrically interconnected in stacking order of the semiconductor chips, a first support member that is disposed to face a first semiconductor chip formed in... Agent: Elpida Memory, Inc.

20110147946 - Wafer-level stack package and method of fabricating the same: A method of manufacturing a semiconductor device includes forming an integrated circuit region on a semiconductor wafer. A first metal layer pattern is formed over the integrated circuit region. A via hole is formed to extend through the first metal layer pattern and the integrated circuit region. A final metal... Agent:

20110147949 - Hybrid integrated circuit device: An embodiment of a method to form a hybrid integrated circuit device is described. This embodiment of the method comprises: forming a first die using a first lithography, where the first die is on a substrate; and forming a second die using a second lithography, where the second die is... Agent: Xilinx, Inc.

20110147950 - Metallization layer structure for flip chip package: The present invention discloses a metallization layer structure for flip chip package, which comprises an UBM layer formed on a metal pad, whereby a fine-quality tin-based solder ball can be formed on the metal pad. The UBM layer is a NiZnP layer formed via the reduction and oxidization of a... Agent:

20110147951 - Wiring substrate and semiconductor device: A wiring substrate includes a wiring layer, an insulating layer formed on the wiring layer, a connection pad formed on the insulating layer, and a via conductor formed to penetrate the insulating layer, and connecting the wiring layer and the connection pad, wherein the wiring layer located under the connection... Agent: Shinko Electric Industries Co., Ltd.

20110147952 - Dicing die-bonding film: The invention relates to a dicing die-bonding film having a pressure-sensitive adhesive layer (2) on a substrate material (1) and a die-bonding adhesive layer (3) on the pressure-sensitive adhesive layer (2), wherein the adhesion of the pressure-sensitive adhesive layer (2) to the die-bonding adhesive layer (3), as determined under the... Agent:

20110147953 - Microelectronic assembly with joined bond elements having lowered inductance: A microelectronic assembly includes a semiconductor chip having chip contacts exposed at a first face and a substrate juxtaposed with a face of the chip. A conductive bond element can electrically connect a first chip contact with a first substrate contact of the substrate, and a second conductive bond element... Agent: Tessera Research LLC

20110147954 - Semiconductor device, and resin composition used for semiconductor device: A semiconductor device of the present invention (1) has a substrate (2); a semiconductor element (3) provided on at least one side of the substrate (2); a first resin (4) obtained by curing a first resin composition which fills a gap between the substrate (2) and the semiconductor element (3);... Agent:

20110147955 - Silicone resin composition and a cured product thereof: The present invention provides a silicone resin composition comprising (A) an organopolysiloxane having at least two alkenyl groups, (B) an organohydrogenpolysiloxane having at least two hydrogen atoms each bonded to a silicon atom, (C) a catalyst comprising a platinum group metal, (D) fine silicone particles, and (E) a (meth)acrylate compound.... Agent:

20110140064 - Carbon/tunneling-barrier/carbon diode: A carbon/tunneling-barrier/carbon diode and method for forming the same are disclosed. The carbon/tunneling-barrier/carbon may be used as a steering element in a memory array. Each memory cell in the memory array may include a reversible resistivity-switching element and a carbon/tunneling-barrier/carbon diode as the steering element. The tunneling-barrier may include a... Agent:

20110140065 - Memory element and memory device: The present invention provides a memory element and a memory device realizing reduced variations in resistance values in an initial state or erase state of a plurality of memory elements and capable of retaining the resistance value in a write/erase state for writing/erasing operations of a plurality of times. The... Agent: Sony Corporation

20110140066 - Phase change memory with various grain sizes: A memory device includes a phase change element, which further includes a first phase change layer having a first grain size; and a second phase change layer over the first phase change layer. The first and the second phase change layers are depth-wise regions of the phase change element. The... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110140067 - Resistance switching memory: A resistance switching memory is introduced herein. The resistance switching memory includes a highly-insulating or resistance-switching material formed to cover the sidewall of a patterned metal line, and extended alongside a dielectric layer sidewall to further contact a portion of the top surface of the lower electrode. The other part... Agent: Industrial Technology Research Institute

20110140068 - Resistance-change memory cell array: According to one embodiment, a resistance-change memory cell array in which a plurality of horizontal electrodes extending horizontally and a plurality of vertical electrodes extending vertically are arranged to configure a cross-point structure includes rectifying insulating films formed in contact with side surfaces of the vertical electrodes in facing regions... Agent:

20110140069 - Nonvolatile semiconductor memory device and method for producing the same: A first opening and a second opening are formed at the same time over a first metal wiring and a second metal wiring, respectively which are provided as the same layer on a substrate on which a transistor for selecting a memory cell is formed. Then, a variable resistor and... Agent:

20110140070 - Three-dimensional semiconductor device and methods of fabricating and operating the same: Provided are three-dimensional semiconductor devices and methods of fabricating and operating the same. A device includes a connection node interposed between first and second nodes, a semiconductor pattern connected to the connection node, a plurality of memory elements connected to the semiconductor pattern, word lines connected to the memory elements,... Agent:

20110140072 - Defect-free group iii - nitride nanostructures and devices using pulsed and non-pulsed growth techniques: Exemplary embodiments provide semiconductor devices including high-quality (i.e., defect free) Group III—Nitride nanostructures and uniform Group III—Nitride nanostructure arrays as well as their scalable processes for manufacturing, where the position, orientation, cross-sectional features, length and the crystallinity of each nanostructure can be precisely controlled. A pulsed growth mode can be... Agent: Nanocrystal Corporation

20110140071 - Nano-spherical group iii-nitride materials: Nano-spherical group III-nitride materials and methods of forming nano-spherical group III-nitride materials are described. Also described is a 1-dimensional LED or similar device formed from a single nano-rod of a nano-spherical group III-nitride material.... Agent:

20110140074 - Room temperature dispenser photocathode: Self-healing photocathode device comprising a photoemissive multi-alkali semiconductor comprising a multi-alkali antimonide having the formula AxBy CzSb, where A, B and C are Group I alkali metals and x+y+z=3; a nanostructured porous membrane, one surface of which is in direct contact with the multi-alkali semiconductor and the opposing surface of... Agent: Los Alamos National Security, LLC

20110140073 - Semiconducting microcavity and microchannel plasma devices: Preferred embodiments of the invention provide semiconducting microcavity plasma devices. Preferred embodiments of the invention are microcavity plasma devices having at least two pn junctions, separated by a microcavity or microchannel and powered by alternate half-cycles of a time-varying voltage waveform. Alternate embodiments have a single pn junction. Microplasma is... Agent: The Board Of Trustees Of The University Of Illinois

20110140077 - Light emitting device: Disclosed is a light emitting device. The light emitting device includes a first conductive semiconductor layer, an active layer over the first conductive semiconductor layer, a second conductive semiconductor layer over the active layer, a superlattice structure layer over the second conductive semiconductor layer, and a first current spreading layer... Agent:

20110140076 - Light emitting element and a production method therefor: A light emitting device according to the embodiment includes a support substrate; a reflective layer over the support substrate; an ohmic contact layer over the reflective layer; a light emitting semiconductor layer including a second conductive semiconductor layer, an active layer and a first conductive semiconductor layer over the ohmic... Agent:

20110140078 - Light-emitting device and method of making the same: This disclosure discloses a light-emitting device. The light-emitting device comprises a light-emitting diode chip comprising a plurality of light-emitting diode units and at least one electrical connecting layer. The light-emitting diode units are electrically connected with each other through the electrical connecting layer. Each of the light-emitting diode units comprises... Agent:

20110140075 - Light-emitting device including quantum dots: A light emitting device including an emissive material comprising quantum dots is disclosed. In one embodiment, the device includes a cathode, a layer comprising a material capable of transporting and injection electrons comprising an inorganic material, an emissive layer comprising quantum dots, a layer comprising a material capable of transporting... Agent:

20110140080 - Method for fabricating ingaain light-emitting diodes with a metal substrate: One embodiment of the present invention provides a method for fabricating light-emitting diodes. The method includes etching grooves on a growth substrate, thereby creating mesas on the growth substrate. The method further includes fabricating on each of the mesas an indium gallium aluminum nitride (InGaAlN) multilayer structure which contains a... Agent: Lattice Power (jiangxi) Corporation

20110140081 - Method for fabricating semiconductor light-emitting device with double-sided passivation: A method for fabricating a semiconductor light-emitting device includes fabricating a multilayer semiconductor structure on a first substrate, wherein the multilayer semiconductor structure comprises a first doped semiconductor layer, an MQW active layer, a second doped semiconductor layer, and a first passivation layer. The method further involves patterning and etching... Agent: Lattice Power (jiangxi) Corporation

20110140079 - Semiconductor light emitting device: The present disclosure relates to a semiconductor light-emitting device which includes: a light-emitting layer composed of an active layer and of barrier layers formed as superlattice layers and disposed on and under the active layer to relieve stresses applied to the active layer and reduce the sum of electric fields... Agent: Wooree Lst Co., Ltd

20110140082 - Light-receiving element and light-receiving element array: A light-receiving element includes a group III-V compound semiconductor stacked structure including an absorption layer 3 having a pn-junction 15 therein, wherein the absorption layer has a multiquantum well structure composed of group III-V compound semiconductors, the pn-junction 15 is formed by selectively diffusing an impurity element into the absorption... Agent: Sumitomo Electric Industries, Ltd.

20110140083 - Semiconductor device structures with modulated doping and related methods: A semiconductor device may include a doped semiconductor region having a modulated dopant concentration. The doped semiconductor region may be a silicon doped Group III nitride semiconductor region with a dopant concentration of silicon being modulated in the Group III nitride semiconductor region. In addition, a semiconductor active region may... Agent:

20110140084 - Optical semiconductor device and method of manufacturing optical semiconductor device: An optical semiconductor device includes a substrate; and an active layer disposed on the substrate, wherein the active layer includes a first barrier layer containing GaAs, a quantum dot layer, which is disposed on the first barrier layer, which includes a quantum dot containing InAs, which includes a side barrier... Agent: Fujitsu Limited

20110140085 - Methods for fabricating self-aligning arrangements on semiconductors: Methods for fabricating self-aligned heterostructures and semiconductor arrangements using silicon nanowires are described.... Agent:

20110140086 - Nanostructured memory device: The present invention provides a nanostructured memory device comprising at least one semiconductor nanowire (3) forming a current transport channel, one or more shell layers (4) arranged around at least a portion of the nanowire (3), and nano-sized charge trapping centres (10) embedded in said one or more shell layers... Agent: Qunano Ab

20110140087 - Scalable quantum well device and method for manufacturing the same: A quantum well device and a method for manufacturing the same are disclosed. In one aspect, the device includes a quantum well region overlying a substrate, a gate region overlying a portion of the quantum well region, a source and drain region adjacent to the gate region. The quantum well... Agent: Katholieke Universiteit Leuven

20110140088 - Phase coherent solid state electron gyroscope array: An apparatus and method is disclosed which may comprise an electron gyroscope, which may comprise an interferometer array which may comprise interferometer rings formed from a sheet of graphene. Each interferometer ring in the interferometer array may have a half-circumference shorter in length than the ballistic length for an electron... Agent:

20110140092 - Charge transport compositions and electronic devices made with such compositions: The present invention relates to charge transport compositions. The invention further relates to electronic devices in which there is at least one active layer comprising such charge transport compositions.... Agent: E. I. Du Pont De Nemours And Company

20110140093 - Compounds for use in light-emitting devices: Compounds including optionally substituted Ring Systems 1-4 may be used as hosts in light-emitting devices.... Agent:

20110140091 - Electro-optic diode devices: A light emissive or photovoltaic device comprising: a cathode structure for injecting electrons, the cathode structure having one or more constituent regions; an anode structure for injecting holes, the anode structure having one or more constituent regions; and an organic light emissive component located between the anode structure and the... Agent: Cambridge Enterprise Limited

20110140089 - Organic el device: l

20110140090 - Organic light emitting diode display: An organic light emitting diode display is disclosed. The display includes: a substrate; a first electrode positioned on the substrate; an organic emission layer positioned on the first electrode; a second electrode positioned on the organic emission layer; and a semi-transmissive layer positioned between the substrate and the first electrode... Agent: Samsung Mobile Display Co., Ltd.

20110140098 - Field effect transistor: It is an object to provide a low-cost oxide semiconductor material which is excellent in controllability of the carrier concentration and stability, and to provide a field effect transistor including the oxide semiconductor material. An oxide including indium, silicon, and zinc is used as the oxide semiconductor material. Here, the... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110140101 - Light emitting device: It is an object of the present invention to provide a light-emitting device in which, even when a material with high reflectivity such as aluminum is used for an electrode, a layer containing oxygen can be formed over the electrode without increasing contact resistance and a manufacturing method thereof. According... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110140095 - Oxide semiconductor thin film transistor, method of manufacturing the same, and organic electroluminescent device including the same: A thin film transistor including: a substrate; a gate electrode formed on the substrate; a gate insulating layer formed on the gate electrode and exposed portions of the substrate; an oxide semiconductor layer formed on the gate insulating layer to correspond to the gate electrode, and comprising an HfInZnO-based oxide... Agent: C/o Samsung Mobile Display Co., Ltd.

20110140099 - Semiconductor device: One object is to provide a new semiconductor device whose standby power is sufficiently reduced. The semiconductor device includes a first power supply terminal, a second power supply terminal, a switching transistor using an oxide semiconductor material and an integrated circuit. The first power supply terminal is electrically connected to... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110140102 - Semiconductor element and a production method therefor: A semiconductor device according to the embodiment includes a growth substrate; a first buffer layer having a compositional formula of RexSiy (0≦x≦2, 0≦y≦2) over the growth substrate; and a group III nitride-based epitaxial semiconductor layer having a compositional formula of InxAlyGa1-x-yN (0≦x, 0≦y, x+y≦1) over the first buffer layer.... Agent:

20110140097 - Thin film transistor and method of fabricating the same: Provided are a thin film transistor in which an oxide semiconductor combined with a nitride containing boron or aluminum is applied to a channel layer and a method of fabricating the same. The thin film transistor in which an oxide semiconductor combined with a nitride containing boron or aluminum is... Agent: Electronics And Telecommunications Research Institute

20110140094 - Thin film transistor array panel and manufacturing method thereof: A thin film transistor array panel according to an exemplary embodiment of the present invention includes: a gate electrode disposed on an insulation substrate; a gate insulating layer disposed on the gate electrode; a semiconductor disposed on the gate insulating layer; an etching stop layer disposed on the semiconductor; an... Agent:

20110140096 - Thin film transistor, method of manufacturing the same, and organic electroluminescent device including thin film transistor: A thin film transistor including: a substrate; a gate electrode formed on the substrate; a gate insulating layer formed on the gate electrode and exposed portions of the substrate; an oxide semiconductor layer formed on the gate insulating layer to correspond to the gate electrode, and comprising an HfInZnO-based oxide... Agent: C/o Samsung Mobile Display Co., Ltd.

20110140103 - Thin-film transistor, array substrate having the thin-film transistor and method of manufacturing the array substrate: A thin-film transistor includes a semiconductor pattern, source and drain electrodes and a gate electrode, the semiconductor pattern is formed on a base substrate, and the semiconductor pattern includes metal oxide. The source and drain electrodes are formed on the semiconductor pattern such that the source and drain electrodes are... Agent: Samsung Electronics Co., Ltd.

20110140100 - Thin-film transistor, method of producing the same, and devices provided with the same: A thin-film transistor including an oxide semiconductor layer is disclosed. The oxide semiconductor layer includes a first area, a second area and a third area forming a well-type potential in the film-thickness direction. The first area forms a well of the well-type potential and has a first electron affinity. The... Agent:

20110140104 - Embedded structure for passivation integrity testing: The present invention relates to a method and system for testing integrity of a passivation layer (108) covering a semiconductor device. A structured layer of electrically conducting material (104) is deposited onto at least a portion of a top surface of a substrate (102) of the semiconductor device. The structured... Agent: Nxp B.v.

20110140105 - Semiconductor device and method of manufacturing the same: A surface mount type semiconductor device is disclosed. The semiconductor device has testing lands on a lower surface of a wiring substrate with a semiconductor chip mounted thereon. Lower surface-side lands with solder balls coupled thereto respectively and testing lands with solder balls not coupled thereto are formed on a... Agent: Renesas Electronics Corporation

20110140106 - Backside naoscale texturing to improve ir response of silicon solar cells and photodetectors: The absorption coefficient of silicon for infrared light is very low and most solar cells absorb very little of the infrared light energy in sunlight. Very thick cells of crystalline silicon can be used to increase the absorption of infrared light energy but the cost of thick crystalline cells is... Agent:

20110140107 - Flat panel display device and method of manufacturing the same: A flat panel display device including a substrate including first and second regions; an active layer on the first region of the substrate including a semiconductor material; a lower electrode on the second region of the substrate including the semiconductor material; a first insulating layer on the substrate including the... Agent:

20110140110 - Motherboard, production method of motherboard, and device substrate (amended: The present invention provides a motherboard having panel substrates efficiently arranged thereon and a reduced wasted substrate region, a method for producing the motherboard, and a device substrate comprising the panel substrates formed on the motherboard. The motherboard of the present invention comprises a plurality of panel substrates, wherein the... Agent:

20110140108 - Semiconductor device and electronic device: An object is to improve the drive capability of a semiconductor device. The semiconductor device includes a first transistor and a second transistor. A first terminal of the first transistor is electrically connected to a first wiring. A second terminal of the first transistor is electrically connected to a second... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110140109 - Semiconductor device and manufacturing method thereof: A semiconductor device includes an oxide semiconductor layer including a channel formation region which includes an oxide semiconductor having a wide band gap and a carrier concentration which is as low as possible, and a source electrode and a drain electrode which include an oxide conductor containing hydrogen and oxygen... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110140117 - Display substrate and method of manufacturing the same: A display substrate includes a base substrate, a signal line, a pad electrode, an organic layer, and a conductive member. The signal line is formed in a display area of the display substrate. The pad electrode extends from the signal line in a peripheral area of the display substrate. The... Agent: Samsung Electronics Co., Ltd.

20110140113 - Organic electroluminescent display device and method for fabricating the same: An organic electroluminescent display and a method for fabricating the same are disclosed. An organic electroluminescent display device includes at least one switching transistor and driving transistor formed on a array substrate, wherein the array substrate includes a gate pad and a date pad formed thereon; a passivation layer having... Agent:

20110140112 - Organic light emitting display and method of manufacturing the same: An organic light emitting display and a method of manufacturing the same are disclosed. In one embodiment, the display includes a gate electrode formed over a substrate and an active layer electrically insulated from the gate electrode, wherein the gate electrode is closer to the substrate than the active layer.... Agent: Samsung Mobile Display Co., Ltd.

20110140114 - Organic light emitting display apparatus and method of manufacturing the same: An organic light emitting display apparatus and a method of manufacturing the same wherein in the organic light emitting device, each of the first to third sub pixels includes: a thin film transistor; a pixel electrode electrically connected to the thin film transistor; and an organic light emitting layer electrically... Agent: Samsung Mobile Display Co., Ltd.

20110140115 - Organic light-emitting display and method of manufacturing the same: An organic light emitting display (OLED) device is disclosed. The OLED device includes a thin-film transistor (TFT), which includes a gate electrode; an active layer insulated from the gate electrode; source and drain electrodes insulated from the gate electrode and contacting the active layer; and an insulation layer interposed between... Agent: Samsung Mobile Display Co., Ltd.

20110140111 - Thin film transistor array panel and method for manufacturing the same: A thin film transistor array panel is provided and includes a gate line, a gate insulating layer covering the gate line, a semiconductor layer disposed on the gate insulating layer, and a data line and a drain electrode disposed on the semiconductor layer. The data line and the drain electrode... Agent: Samsung Electronics Co., Ltd

20110140116 - Thin film transistor, display device, and electronic device: The present invention provides a thin film transistor using an oxide semiconductor as a channel, controlling threshold voltage to a positive direction, and realizing improved reliability. The thin film transistor includes: a gate electrode; a pair of source/drain electrodes; an oxide semiconductor layer provided between the gate electrode and the... Agent: Sony Corporation

20110140118 - Backside stress compensation for gallium nitride or other nitride-based semiconductor devices: A method includes forming a stress compensation layer over a first side of a semiconductor substrate and forming a Group III-nitride layer over a second side of the substrate. Stress created on the substrate by the Group III-nitride layer is at least partially reduced by stress created on the substrate... Agent: National Semiconductor Corporation

20110140119 - Organic light-emitting display device and method of manufacturing the same: An organic light-emitting display device and a method of manufacturing the same, the organic light-emitting display device including: a substrate; a display unit disposed on the substrate; a sealing substrate disposed facing the display unit; a sealant adhering the substrate to the sealing substrate; and a getter formed on surfaces... Agent: Samsung Mobile Display Co., Ltd.

20110140120 - Semiconductor device: It is an object of the present invention to connect a wiring, an electrode, or the like formed with two incompatible films (an ITO film and an aluminum film) without increasing the cross-sectional area of the wiring and to achieve lower power consumption even when the screen size becomes larger.... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110140121 - Enhancement normally off nitride semiconductor device and method of manufacturing the same: The present invention relates to an enhancement normally off nitride semiconductor device and a method of manufacturing the same. The method includes the steps of: forming a buffer layer on a substrate; forming a first nitride semiconductor layer on the buffer layer; forming a second nitride semiconductor layer on the... Agent: Kyungpook National University Industry Academic Cooperation Foundation

20110140122 - Large area, uniformly low dislocation density gan substrate and process for making the same: Large area single crystal III-V nitride material having an area of at least 2 cm2, having a uniformly low dislocation density not exceeding 3×106 dislocations per cm2 of growth surface area, and including a plurality of distinct regions having elevated impurity concentration, wherein each distinct region has at least one... Agent: Cree, Inc.

20110140125 - Light emitting diodes with smooth surface for reflective electrode: A light emitting diode comprising an epitaxial layer structure, a first electrode, and a second electrode. The first and second electrodes are disposed on one side of the epitaxial layer structure. The epitaxial layer structure includes a transparent ohmic contact layer having a root-means-square (RMS) roughness less than about 3... Agent: Bridgelux Inc

20110140123 - Nitride-based transistors with a protective layer and a low-damage recess: Transistors are fabricated by forming a nitride-based semiconductor barrier layer on a nitride-based semiconductor channel layer and forming a protective layer on a gate region of the nitride-based semiconductor barrier layer. Patterned ohmic contact metal regions are formed on the barrier layer and annealed to provide first and second ohmic... Agent:

20110140124 - Passivation of aluminum nitride substrates: The present invention provides methods of protecting a surface of an aluminum nitride substrate. The substrate with the protected surface can be stored for a period of time and easily activated to be in a condition ready for thin film growth or other processing. In certain embodiments, the method of... Agent: North Carolina State University

20110140126 - Heat conduction for chip stacks and 3-d circuits: A semiconductor device assembly and method can include a single semiconductor layer or stacked semiconductor layers, for example semiconductor wafers or wafer sections (semiconductor dice). On each semiconductor layer, a diamond layer formed therethrough can aid in the routing and dissipation of heat. The diamond layer can include a first... Agent:

20110140127 - Semi-conductor light emitting device and method for manufacturing thereof: A semiconductor light-emitting device and a method for manufacturing the same is disclosed, which improves light extraction efficiency by forming a plurality of protrusions on a surface of a substrate for growing a nitride semiconductor material thereon, the semiconductor light-emitting device comprising a substrate; one or more first protrusions on... Agent:

20110140129 - Light source with improved monochromaticity: Light emitting systems are disclosed. The light emitting system includes an LED that emits light at a first wavelength and includes a pattern that enhances emission of light from a top surface of the LED and suppresses emission of light from one or more sides of the LED. The light... Agent:

20110140128 - Monochromatic light source with high aspect ratio: Light emitting systems are disclosed. The light emitting system includes an LED that emits light at a first wave-length. A primary portion of the emitted first wavelength light exits the LED from a top surface of the LED that has a minimum lateral dimension Wmin. The remaining portion of the... Agent:

20110140130 - Method for forming a thin-film structure of a light-emitting device via nanoimprint: A method is disclosed for making a thin-film structure of a light-emitting device via nanoimprint. The method includes the steps of providing a light-emitting element, providing a film on the light-emitting element via spin coating precursor on the light-emitting element, forming a pattern on the film by nanoimprint; and curing... Agent: Chung-shan Institute Of Science And Technology, Armaments, Bureau, Ministry Of National Defense

20110140131 - Photo-detector with wavelength converter: The invention relates to a photo-detector comprising a light sensitive element (101) and a wavelength converter (103) arranged in front of the light sensitive element, the wavelength converter being configured to convert light of a first wavelength into light of a second wavelength and to direct the light of the... Agent: Koninklijke Philips Electronics N.v.

20110140134 - Display device and manufacturing method thereof: In the present invention, a wiring including Cu is provided as an electrode or a wiring used for the display device represented by the EL display device and the liquid crystal display device. Besides, sputtering is performed with a mask to form the wiring including Cu. With such structure, it... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110140135 - Led package having an array of light emitting cells coupled in series: Disclosed is a light emitting diode (LED) package having an array of light emitting cells coupled in series. The LED package comprises a package body and an LED chip mounted on the package body. The LED chip has an array of light emitting cells coupled in series. Since the LED... Agent: Seoul Semiconductor Co., Ltd.

20110140133 - Light emitting device having increased light output: The light intensity emitted from a package is increased by adjusting a portion of the package encapsulant so that light impacting the side walls of the adjusted encapsulant portion will encounter total internal reflection (TIR) with the reflected light directed toward the top surface of the package. The adjusted portion... Agent: Avago Technologies GeneralIP(singapore) Pte. Ltd.

20110140132 - Light-emitting device: Provided are a light-emitting device, a light-emitting device package, and a method for fabricating the light-emitting device. The light-emitting device includes a first light-emitting structure; an insulation layer having non-conductivity, in which a current does not flow, on the first light-emitting structure; a second light-emitting structure on the insulation layer;... Agent:

20110140137 - Led device and method of manufacturing the same: An LED device includes a heat conductive base, and a red, a green, and a blue LED chips mounted on the base. The red LED chip includes a first n-type GaN layer, a first p-type GaN layer, and a first active layer sandwiched therebetween. The first active layer of the... Agent: Hon Hai Precision Industry Co., Ltd.

20110140136 - Led lighting assemblies: A lighting assembly for a light emitting diode (LED) package having an LED chip on the top of a mounting substrate with power leads on the top of the mounting substrate arranged proximate to a first edge of the mounting substrate, which is mounted to a base, includes power contacts... Agent: Tyco Electronics Corporation

20110140139 - Organic light emitting diode display: An organic light emitting diode display is disclosed. The display includes a substrate, a first electrode placed on the substrate, an organic emissive layer placed on the first electrode, a second electrode placed on the organic emissive layer, and a refractive layer disposed between the substrate and the first electrode.... Agent: Samsung Mobile Display Co., Ltd.

20110140138 - Organic light emitting display apparatus and method of manufacturing the same: An organic light emitting display apparatus and a method of manufacturing the same. The display apparatus includes first, second, and third sub-pixels formed on a substrate. The first sub-pixel includes a first pixel electrode, a first transmissive conductive layer formed on the first pixel electrode, a second transmissive conductive layer... Agent: Samsung Mobile Display Co., Ltd.

20110140140 - Individual light shields: A light emitting assembly (10) includes a plurality of light emitting diodes (28) (L.E.D.s) serially aligned along a mounting surface (14) and a light shield (40) is disposed adjacent each L.E.D. An exterior surface of one light shield (40) is exposed to light emitting from an adjacent light shield (40).... Agent:

20110140141 - Method for production of a radiation-emitting semiconductor chip: A method for micropatterning a radiation-emitting surface of a semiconductor layer sequence for a thin-film light-emitting diode chip, wherein the semiconductor layer sequence is grown on a substrate, a mirror layer is formed or applied on the semiconductor layer sequence, which reflects back into the semiconductor layer sequence at least... Agent: Osram Opto Semiconductor Gmbh

20110140155 - Electrooptical device and electronic apparatus: An electrooptical device includes a substrate, a pixel electrode which is provided on the substrate, a semiconductor element which is provided so as to correspond to the pixel electrode, and a light reflection portion formed with a groove formed on at least a part of the substrate. In the electrooptical... Agent: Seiko Epson Corporation

20110140145 - Led unit: An LED unit includes an LED and a lens mounted on the LED. The lens includes a light-incident face adjacent to the LED, a light-emergent face remote from the LED, and a light-reflecting face between the light-incident face and the light-emergent face. The light-incident face includes a first light-incident face... Agent: Foxconn Technology Co., Ltd.

20110140146 - Led unit: An LED unit includes an LED and a lens mounted on the LED. The lens includes a light-incident face adjacent to the LED, a light-emergent face remote from the LED, and a light-reflecting face between the light-incident face and the light-emergent face. The light-incident face includes a first light-incident face... Agent: Foxconn Technology Co., Ltd.

20110140147 - Led unit: An LED unit includes an LED and a lens mounted on the LED. The lens includes a light-incident face adjacent to the LED, a light-emergent face remote from the LED, and a light-reflecting face between the light-incident face and the light-emergent face. The light-incident face includes a first light-incident face... Agent: Foxconn Technology Co., Ltd.

20110140152 - Light emitting device and a fabrication method thereof: A light emitting device according to the embodiment includes a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer; a first passivation layer surrounding the first conductive semiconductor layer, the active layer, and the second conductive semiconductor... Agent:

20110140153 - Light emitting device and light emitting device package: Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a substrate including a plurality of patterns, each pattern including three protrusion parts, a plurality of spaces formed between the patterns, and a light emitting device structure over the patterns and the spaces.... Agent:

20110140142 - Light emitting device package: A light emitting device package according to embodiments comprises: a package body; a lead frame on the package body; a light emitting device supported by the package body and electrically connected with the lead frame; a filling material surrounding the light emitting device; and a phosphor layer comprising phosphors on... Agent:

20110140143 - Light emitting diode package and method of manufacturing the same: Disclosed is a light emitting diode package, including a metal body including a cavity for receiving a light emitting diode therein, a lens mount for mounting thereon a lens through which light is transmitted, a heat sink for dissipating heat, a lead insertion recess formed on a bottom surface of... Agent:

20110140154 - Light-emitting device: A light-emitting device comprising a substrate having a conductor layer formed on its surface and a light-emitting element disposed on the conductor layer, characterized in that an overcoat layer is formed between the conductor layer and the light-emitting element, and the overcoat layer is a borosilicate glass which comprises, as... Agent: Asahi Glass Company, Limited

20110140157 - Light-emitting diode backlight module: A light-emitting diode backlight module includes a base and a light source disposed on the base. The light source comprises a substrate, a heat sink and an LED chip. The base has a heat conductor. The heat sink of the light source is coupled between the substrate of the light... Agent: Everlight Electronics Co., Ltd

20110140148 - Optical device for semiconductor based lamp: This invention discloses an optical device for a semiconductor based lamp, the optical device comprising a base for mounting a semiconductor based light-emitting device thereon, a transparent body encapsulating the semiconductor based light-emitting device, and a reflective surface covering a predetermined region on a top of the transparent body, the... Agent: Pinecone Energies, Inc.

20110140149 - Optical device for semiconductor based lamp: This invention discloses an optical device for a semiconductor based lamp, the optical device comprising a base for mounting a semiconductor based light-emitting device, and a light-redirecting member having an opening and a reflective surface next to the opening, wherein the opening is aligned directly above the semiconductor based light-emitting... Agent: Pinecone Energies, Inc.

20110140156 - Organic light emitting diode display: An organic light emitting diode display is disclosed. The display includes a first electrode, an organic emissive layer placed on the first electrode, and a second electrode having a first layer placed on the organic emissive layer and a second layer disposed between the first layer and the organic emissive... Agent: Samsung Mobile Display Co., Ltd.

20110140151 - Organic-light emitting device, light equipment including the same, and organic light-emitting display apparatus including the same: An organic light-emitting device includes a substrate, a first electrode layer on the substrate, a patterned refractive layer on the first electrode layer, a taper angle between a patterned end of the refractive layer and a surface of the first electrode being about 20 to about 60 degrees, the refractive... Agent:

20110140144 - Package substrate for optical element and method of manufacturing the same: Disclosed is a package substrate for an optical element, which includes a base substrate, a first circuit layer formed on the base substrate and including a mounting portion, an optical element mounted on the mounting portion, one or more trenches formed into a predetermined pattern around the mounting portion by... Agent:

20110140158 - Semiconductor light emitting device: Disclosed is a semiconductor light emitting device. An embodiment of the semiconductor light emitting device includes a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, a second electrode layer under the second conductive semiconductor layer, and... Agent:

20110140150 - System and method for led packaging: System and method for LED packaging. The present invention is directed to optical devices. More specifically, embodiments of the presentation provide LED packaging having one or more reflector surfaces. In certain embodiments, the present invention provides LED packages that include thermal pad structures for dissipating heat generated by LED devices.... Agent: Soraa, Inc.

20110140162 - Conductive adhesive and led substrate using the same: Provided are a conductive adhesive capable of ensuring both conductive properties and adhesion properties and an LED substrate using the conductive adhesive. The conductive adhesive contains a conductive filler, a binder resin, and a solvent as main components thereof, and the conductive filler contains a metal powder having an average... Agent: Sumitomo Electric Industries, Ltd.

20110140161 - Light emitting device, light emitting device and package, and lighting system: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a light emitting structure layer comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and... Agent:

20110140160 - Light emitting diode having electrode pads: The present invention relates to a light emitting diode including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second... Agent: Seoul Opto Device Co., Ltd.

20110140159 - Light-emitting element: Disclosed herein is a light-emitting element including: a first conductivity type semiconductor layer; a light-emitting functional layer formed on the first conductivity type semiconductor layer; a second conductivity type semiconductor layer formed on the light-emitting functional layer; a first conductivity type electrode which has continuity with the exposed portion of... Agent: Sony Corporation

20110140164 - Organic light emitting apparatus and method of manufacturing organic light emitting apparatus: An organic light emitting apparatus and a method of manufacturing the organic light emitting apparatus. According to the organic light emitting apparatus and the method of manufacturing the organic light emitting apparatus, the characteristics of a barrier layer are maintained and a stress of a substrate is reduced, even at... Agent: Samsung Mobile Display Co., Ltd.

20110140163 - Organic light emitting diode display device and method of manufacturing the same: An organic light emitting diode (OLED) display device and a method of manufacturing the same is disclosed. In one embodiment, the OLED device includes a substrate; a display unit formed on a display area of the substrate; and an encapsulating film covering i) the display unit and ii) a non-display... Agent: Samsung Mobile Display Co., Ltd.

20110140165 - High voltage semiconductor device: A high voltage semiconductor device includes a semiconductor substrate, a p type base region in a first main surface, an n+ type emitter region in the p type base region, an n+ type cathode region adjacent to an end surface of the semiconductor substrate and not penetrating the semiconductor substrate,... Agent: Mitsubishi Electric Corporation

20110140166 - Method of fabricating a deep trench insulated gate bipolar transistor: In one embodiment, a method comprises forming an epitaxial layer over a substrate of an opposite conductivity type, the epitaxial layer being separated by a buffer layer having a doping concentration that is substantially constant in a vertical direction down to the buffer layer. A pair of spaced-apart trenches is... Agent: Power Integrations, Inc.

20110140167 - Nanotube semiconductor devices: A method for forming a semiconductor device includes forming a nanotube region using a thin epitaxial layer formed on the sidewall of a trench in the semiconductor body. The thin epitaxial layer has uniform doping concentration. In another embodiment, a first thin epitaxial layer of the same conductivity type as... Agent: Alpha & Omega Semiconductor, Inc.

20110140168 - Avalanche phototector with integrated micro lens: Provided is an avalanche photodetector with an integrated micro lens. The avalanche photodetector includes a light absorbing layer on a semiconductor substrate, an amplification layer on the light absorbing layer, a diffusion layer within the amplification layer, and the micro lens disposed corresponding to the diffusion layer. The micro lens... Agent: Electronics And Telecommunications Research Institute

20110140171 - Apparatus and methods for forming a modulation doped non-planar transistor: Embodiments of an apparatus and methods for providing three-dimensional complementary metal oxide semiconductor devices comprising modulation doped transistors are generally described herein. Other embodiments may be described and claimed.... Agent:

20110140169 - Highly conductive source/drain contacts in iii-nitride transistors: In one embodiment, a method for fabricating a III-Nitride transistor on a III-Nitride semiconductor body is disclosed. The method comprises etching dielectric trenches in a field dielectric overlying gate, source, and drain regions of the III-Nitride semiconductor body, and thereafter forming a gate dielectric over the gate, source and drain... Agent: International Rectifier Corporation

20110140170 - Structure and method for making a strained silicon transistor: A graded SiGe sacrificial layer is epitaxially grown overlying a silicon substrate. A single crystal silicon layer is then grown by an epitaxial process overlying the graded SiGe layer. A SiGe layer is next grown by an epitaxial process as a single crystal layer overlying the silicon layer. A subsequent... Agent: Stmicroelectronics, Inc.

20110140174 - Compound semiconductor device and production method thereof: A compound semiconductor device is comprised of: a compound semiconductor layer including a first active layer and a second active layer forming a hetero junction with the first active layer so as to naturally generate a two-dimensional carrier gas channel in the first active layer along the hetero junction; a... Agent: Sanken Electric Co., Ltd.

20110140173 - Low ohmic contacts containing germanium for gallium nitride or other nitride-based power devices: An apparatus includes a substrate, a Group III-nitride layer over the substrate, and an electrical contact over the Group III-nitride layer. The electrical contact includes a stack having multiple layers of conductive material, and at least one of the layers in the stack includes germanium. The layers in the stack... Agent: National Semiconductor Corporation

20110140172 - Reverse side engineered iii-nitride devices: Group III-nitride devices are described that include a stack of III-nitride layers, passivation layers, and conductive contacts. The stack includes a channel layer with a 2DEG channel, a barrier layer and a spacer layer. One passivation layer directly contacts a surface of the spacer layer on a side opposite to... Agent: Transphorm Inc.

20110140175 - Monolithic microwave integrated circuit device and method of forming the same: Provided are a monolithic microwave integrated circuit device and a method for forming the same. The method includes: forming an sub-collector layer, a collector layer, a base layer, an emitter layer, and an emitter cap layer on a Heterojunction Bipolar Transistor (HBT) region and a PIN diode region of a... Agent: Electronics And Telecommunications Research Institute

20110140176 - Monolithic integrated composite group iii-v and group iv semiconductor device and method for fabricating same: According to one disclosed embodiment, a method for fabricating a monolithic integrated composite device comprises forming a group III-V semiconductor body over a group IV semiconductor substrate, forming a trench in the group III-V semiconductor body, and forming a group IV semiconductor body in the trench. The method also comprises... Agent: International Rectifier Corporation

20110140177 - Solid-state imaging device and method of controlling the same: According to one embodiment, a solid-state imaging device includes a semiconductor region, a first diffusion layer, a second diffusion layer, a third diffusion layer, an insulating film, a potential layer, and a read electrode. The semiconductor region includes first and second surfaces. The first diffusion layer is formed in the... Agent:

20110140178 - Three-dimensional cmos circuit on two offset substrates and method for making same: A three-dimensional CMOS circuit having at least a first N-conductivity field-effect transistor and a second P-conductivity field-effect transistor respectively formed on first and second crystalline substrates. The first field-effect transistor is oriented, in the first substrate, with a first secondary crystallographic orientation. The second field-effect transistor is oriented, in the... Agent: Commissariat A L'energie Atomique Et Aux Energies Alternatives

20110140179 - Semiconductor device: A semiconductor device includes: a rectifying element; an electrode pad electrically connected to the rectifying element; and a resistance and a depletion transistor arranged between the rectifying element and the electrode pad, and electrically connected to each other. The semiconductor device has a configuration in which the rectifying element, the... Agent: Mitsubishi Electric Corporation

20110140180 - Semiconductor device having diode characteristic: According to one embodiment, a semiconductor device is provided. The semiconductor device has a first region formed of semiconductor and a second region formed of semiconductor which borders the first region. An electrode is formed to be in ohmic-connection with the first region. A third region is formed to sandwich... Agent: Kabushiki Kaisha Toshiba

20110140181 - Removal of masking material: Methods for removing a masking material, for example, a photoresist, and electronic devices formed by removing a masking material are presented. For example, a method for removing a masking material includes contacting the masking material with a solution comprising cerium. The cerium may be comprised in a salt. The salt... Agent: Advanced Technology Materials, Inc.

20110140182 - Solid-state imaging device which can expand dynamic range: According to one embodiment, a solid-state imaging device includes an area and color filters. The area includes pixels. Each of the pixels includes a first photodiode, a first read transistor, a second photodiode, a second read transistor, a floating diffusion, a reset transistor, and an amplifying transistor. The first photodiode... Agent:

20110140183 - Semiconductor device and method of forming the same: A semiconductor device includes a gate electrode on a gate insulating film over a semiconductor substrate, a first sidewall insulating film on a side surface of the gate electrode, and source and drain regions, each including a pocket diffusion layer of a first conductivity type, and first and second diffusion... Agent: Elpida Memory, Inc.

20110140185 - Semiconductor integrated circuit device and manufacture thereof: In a semiconductor integrated circuit device, testing pads (209b) using a conductive layer, such as relocation wiring layers (205) are provided just above or in the neighborhood of terminals like bonding pads (202b) used only for probe inspection at which bump electrodes (208) are not provided. Similar testing pads may... Agent: Renesas Electronics Corporation

20110140184 - Surround gate access transistors with grown ultra-thin bodies: A vertical transistor having an annular transistor body surrounding a vertical pillar, which can be made from oxide. The transistor body can be grown by a solid phase epitaxial growth process to avoid difficulties with forming sub-lithographic structures via etching processes. The body has ultra-thin dimensions and provides controlled short... Agent:

20110140186 - Capacitor for semiconductor device and manufacturing method of capacitor for semiconductor device: Disclosed are a capacitor for a semiconductor device and a manufacturing method thereof. The capacitor includes a second oxide layer filling a first trench in a semiconductor substrate; second and third trenches in an active region at opposing sides of the second oxide layer in the first trench; a third... Agent: Dongbu Hitek Co., Ltd.

20110140187 - Methods of forming vertical field effect transistors, vertical field effect transistors, and dram cells: A method of forming a vertical field effect transistor includes etching an opening into semiconductor material. Sidewalls and radially outermost portions of the opening base are lined with masking material. A semiconductive material pillar is epitaxially grown to within the opening adjacent the masking material from the semiconductor material at... Agent: Micron Technology, Inc.

20110140188 - Non-volatile memory device and method of fabricating the same: A non-volatile memory device including a substrate, a dielectric layer, a floating gate, source and drain regions, a channel region, and a doped layer is provided. The substrate includes a first region and a second region, and the substrate has an uneven surface in the second region. The dielectric layer... Agent: Maxchip Electronics Corp.

20110140189 - Electrically erasable programmable read-only memory and manufacturing method thereof: An electrically erasable programmable read-only memory includes a first polysilicon layer, a second polysilicon layer and a third polysilicon layer, the first polysilicon layer and the third polysilicon layer forming a control gate and the second polysilicon layer forming a floating gate. The first polysilicon layer is horizontally disposed in... Agent: Electronics And Telecommunications Research Institute

20110140190 - Method for manufacturing twin bit structure cell with aluminum oxide layer: A method for manufacturing a twin bit cell structure with an aluminum oxide material includes forming a gate dielectric layer overlying a semiconductor substrate and a polysilicon gate structure overlying the gate dielectric layer. An undercut region is formed in each side of the gate dielectric layer underneath the polysilicon... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20110140192 - Method for manufacturing twin bit structure cell with floating polysilicon layer: A method for forming a twin-bit cell structure is provided. The method includes providing a semiconductor substrate including a surface region. A gate dielectric layer is formed overlying the surface region. The method forms a polysilicon gate structure overlying the gate dielectric layer. In a specific embodiment, the method subjects... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20110140191 - Method for manufacturing twin bit structure cell with silicon nitride layer: A method for manufacturing a twin bit cell structure with a silicon nitride material includes forming a gate dielectric layer overlying a semiconductor substrate and a polysilicon gate structure overlying the gate dielectric layer. An undercut region is formed in each side of the gate dielectric layer underneath the polysilicon... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20110140193 - Semiconductor device and method of manufacturing the same: A semiconductor device having a non-volatile memory and a method of manufacturing the same are provided. The semiconductor device includes a base material and a stack structure. The stack structure disposed on the base material at least includes a tunneling layer, a trapping layer and a dielectric layer. The trapping... Agent: Macronix International Co., Ltd.

20110140194 - Enhancing schottky breakdown voltage (bv) without affecting an integrated mosfet-schottky device layout: This invention discloses a semiconductor power device that includes an active cell area having a plurality of power transistor cells. Each of said power transistor cells has a planar Schottky diode that includes a Schottky junction barrier metal covering areas above gaps between separated body regions between two adjacent power... Agent:

20110140195 - Cross-point diode arrays and methods of manufacturing cross-point diode arrays: Methods of forming an array of memory cells and memory cells that have pillars. Individual pillars can have a semiconductor post formed of a bulk semiconductor material and a sacrificial cap on the semiconductor post. Source regions can be between columns of the pillars, and gate lines extend along a... Agent: Micron Technology, Inc.

20110140196 - Embedded bit line structure, field effect transistor structure with the same and method of fabricating the same: An embedded bit line structure, in which, a substrate includes an insulator layer having an original top surface and a semiconductor layer on the original top surface of the insulator layer, and a bit line is disposed within the lower portion of the trench along one side of an active... Agent:

20110140198 - Semiconductor device and method for fabricating the same: Described is a method for fabricating a semiconductor device having an FET of a trench-gate structure obtained by disposing a conductive layer, which will be a gate, in a trench extended in the main surface of a semiconductor substrate, wherein the upper surface of the trench-gate conductive layer is formed... Agent: Hitachi Ulsi Systems, Co., Ltd.

20110140197 - Semiconductor device and method for manufacturing the same: According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer, a third semiconductor layer, a fourth semiconductor layer, first trenches, a second trench, an insulating film, a gate electrode, a first main electrode, a second main electrode, a channel... Agent: Kabushiki Kaisha Toshiba

20110140199 - Semiconductor device and method of manufacturing the same: A high voltage ESD protective diode having high avalanche withstand capability and capable of being formed by using manufacturing steps identical with those for a high voltage transistor to be protected, the device having a structure in which a gate oxide film is formed over a substrate surface at a... Agent: Hitachi, Ltd.

20110140200 - Lateral power mosfet with integrated schottky diode: A semiconductor device includes a substrate having a first region and a second region. The first region is electrically isolated from the second region. The semiconductor device further includes a lateral field-effect transistor (FET) disposed within the first region. The lateral FET includes a first terminal and a second terminal.... Agent: Great Wall Semiconductor Corporation

20110140201 - Lateral power mosfet structure and method of manufacture: A lateral power MOSFET with a low specific on-resistance is described. Stacked P-top and N-grade regions in patterns of articulated circular arcs separate the source and drain of the transistor.... Agent:

20110140202 - Flash memory device having triple well structure: A flash memory device, including a cell array region where a plurality of memory cells are connected in series to a single cell string, the cell array region including a pocket p-well configured to accommodate the plurality of memory cells and an n-well configured to surround the pocket p-well, a... Agent:

20110140203 - novel contact implement structure for high density design: The present disclosure provides a device in an integrated circuit. The device includes an active region in a semiconductor substrate; an isolation region adjacent the active region; a gate disposed on the active region and extending to the isolation region in a first direction; and a gate contact disposed within... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110140204 - Transistors with an extension region having strips of differing conductivity type and methods of forming the same: Methods of forming transistors and transistors are disclosed, such as a transistor having a gate dielectric over a semiconductor having a first conductivity type, a control gate over the gate dielectric, source and drain regions having a second conductivity type in the semiconductor having the first conductivity type, and strips... Agent: Micron Technology, Inc.

20110140206 - Semiconductor device: A semiconductor device including a substrate, a gate structure, a spacer and source/drain regions is provided. The gate structure is on the substrate, wherein the gate structure includes, from bottom to top, a high-k layer, a work function metal layer, a wetting layer and a metal layer. The spacer is... Agent: United Microelectronics Corp.

20110140205 - Semiconductor device and method for manufacturing the same: Many of the physical properties of a silicon semiconductor have already been understood, whereas many of the physical properties of an oxide semiconductor have been still unclear. In particular, an adverse effect of an impurity on an oxide semiconductor has been still unclear. In view of the above, a structure... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110140207 - Metal gate structure and method of forming the same: The metal gate structure of the present invention can include a TiN complex, and the N/Ti proportion of the TiN complex is decreased from bottom to top. In one embodiment, the TiN complex can include a single TiN layer, which has an N/Ti proportion gradually decreasing from bottom to top.... Agent:

20110140208 - Fabrication process of a biosensor on a semiconductor substrate: The disclosure relates to a fabrication process of a biosensor on a semiconductor wafer, comprising steps of: making a central photosensitive zone comprising at least one pixel-type biological analysis device comprising a photosensitive layer, and a first peripheral zone surrounding the central photosensitive zone, comprising electronic circuits. The first peripheral... Agent: Universite Paul Cezanne Aix Marseille Iii

20110140209 - Multi-layer micro structurefor sensing substance: A micro structure for sensing a substance using light scattering includes a substrate, a first layer on the substrate, wherein the first layer comprises a metallic material, a second layer over the first layer, and a mask layer over the second layer. A plurality of nano holes are formed through... Agent:

20110140211 - Flow sensor, method for manufacturing flow sensor and flow sensor module: The invention provides a flow sensor structure for sealing the surface of an electric control circuit and a part of a semiconductor device via a manufacturing method capable of preventing occurrence of flash or chip crack when clamping the semiconductor device via a mold. The invention provides a flow sensor... Agent: Hitachi Automotive Systems, Ltd.

20110140210 - Microelectromechanical sensor device package and method for making the same: A microelectromechanical sensor device package includes a substrate, a microelectromechanical sensor device and a cap. The substrate has a surface on which a circuit pattern having a plurality of first conductive contacts is provided. The device is mounted on the surface of the substrate and has an active surface on... Agent: Domintech Co., Ltd.

20110140213 - Capacitive vibration sensor: A hollow part is formed in a silicon substrate through the front and the back. A vibration electrode plate is arranged on an upper surface of the silicon substrate to cover the opening on the upper surface. A fixed electrode plate covers the upper side of the vibration electrode plate... Agent: Omron Corporation

20110140212 - Electromechanical transducer and method of manufacturing the same: An electromechanical transducer includes: a conductive substrate; multiple elements which are disposed on a first face side of the substrate and which contain cells; grooves; and insulating films. The substrate has a second face which is opposite from the first face. The grooves run from the second face of the... Agent: Canon Kabushiki Kaisha

20110140214 - Pattern arrangement method, silicon wafer and semiconductor device: A pattern arrangement method including using a stepper to arrange a plurality of chip patterns arranged parallel to a first direction and a second direction on a silicon wafer using a reticule which includes a plurality of patterns expanded in the first direction and the second direction which intersects the... Agent: Dai Nippon Printing Co., Ltd.

20110140216 - Method of wafer-level fabrication of mems devices: The present disclosure relates to a method of fabricating a micromachined CMOS-MEMS integrated device as well as the devices/apparatus resulting from the method. In the disclosed method, the anisotropic etching (e.g., DRIE) for isolation trench formation on a MEMS element is performed on the back side of a silicon wafer,... Agent: Oakland University

20110140215 - Semiconductor pressure sensor and method for manufacturing the same: A semiconductor pressure sensor comprises: a substrate having a through-hole; a polysilicon film provided on the substrate and having a diaphragm above the through-hole; an insulating film provided on the polysilicon film; first, second, third, and forth polysilicon gauge resistances provided on the insulating film and having a piezoresistor effect;... Agent: Mitsubishi Electric Corporation

20110140217 - Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization: A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a... Agent: Grandis, Inc.

20110140218 - Memory constructions comprising magnetic materials: The invention includes a method of forming a semiconductor construction, such as an MRAM construction. A block is formed over a semiconductor substrate. First and second layers are formed over the block, and over a region of the substrate proximate the block. The first and second layers are removed from... Agent: Micron Technology, Inc.

20110140221 - Image sensor having curved micro-mirrors over the sensing photodiode and method for fabricating: The invention involves the integration of curved micro-mirrors over a photodiode active area (collection area) in a CMOS image sensor (CIS) process. The curved micro-mirrors reflect light that has passed through the collection area back into the photo diode. The curved micro-mirrors are best implemented in a backside illuminated device... Agent: Omnivision Technologies, Inc.

20110140220 - Microelectronic device, in particular back side illuminated image sensor, and production process: A process for producing a microelectronic device includes producing a first semiconductor substrate which includes a first layer and a second layer present between a first side and a second side of the substrate. First electronic components and an interconnecting part are produced on and above the second side. The... Agent: Stmicroelectronics (crolles2) Sas

20110140222 - Passivation planarization: A pixel cell is formed by locating a first passivation layer over the final layer of metal lines. Subsequently, the uneven, non-uniform passivation layer is subjected to a planarization process such as chemical mechanical polishing, mechanical abrasion, or etching. A spin-on glass layer may be deposited over the non-uniform passivation... Agent: Round Rock Research, LLC

20110140219 - Photoelectric conversion device: A device includes a plurality of photoelectric conversion regions, an interlayer insulating film arranged on the plurality of photoelectric conversion regions, a protective insulating film that is arranged in contact with the interlayer insulating film and has a refractive index different from that of the interlayer insulating film, recesses arranged... Agent: Canon Kabushiki Kaisha

20110140223 - Light detecting apparatus and method of manufacturing same: A light detecting apparatus includes an SOI substrate. In the SOI substrate, a semiconductor layer and a silicon substrate are laminated via an insulating layer. The semiconductor layer has a light receiving unit and a circuit unit formed therein. The light detecting apparatus also includes an interlayer insulating film formed... Agent: Oki Semiconductor Co., Ltd.

20110140224 - Diode bolometer and method for producing a diode bolometer: A bolometer has a semiconductor membrane having a single-crystalline portion, and spacers so as to keep the semiconductor membrane at a predetermined distance from an underlying substrate. The complementarily doped regions of the single-crystalline portion form a diode and the predetermined distance corresponds to a fourth of an infrared wavelength.... Agent:

20110140225 - Semiconductor device: In a first interlevel insulating film, a first region which is made of the first interlevel insulating film and in which first wiring films are not provided is formed to be located above a first light receiving part of the plurality of light receiving parts, and a second region which... Agent:

20110140226 - Semiconductor devices and methods for manufacturing the same: A semiconductor device includes a substrate and a first insulating layer. The first insulating layer includes a first lower layer and a first upper layer on the first lower layer. The first insulating layer has a first opening through the first lower layer and the first upper layer. A maximum... Agent:

20110140227 - Depletion mode circuit protection device: A non-volatile microelectronic memory device that includes a depletion mode circuit protection device that prevents high voltages, which are applied to bitlines during an erase operation, from being applied to and damaging low voltage circuits which are electrically coupled to the bitlines.... Agent:

20110140230 - Manufacture of thin silicon-on-insulator (soi) structures: The present invention relates to a method of forming a SOI structure having a thin silicon layer by forming a first etch stop layer on a donor substrate, forming a second etch stop layer on the first etch stop layer, wherein the material of the second etch stop layer differs... Agent:

20110140228 - Method of filling large deep trench with high quality oxide for semiconductor devices: A method is disclosed for creating a semiconductor device structure with an oxide-filled large deep trench (OFLDT) portion having trench size TCS and trench depth TCD. A bulk semiconductor layer (BSL) is provided with a thickness BSLT>TCD. A large trench top area (LTTA) is mapped out atop BSL with its... Agent:

20110140229 - Techniques for forming shallow trench isolation: Techniques are disclosed for shallow trench isolation (STI). The techniques can be used to form STI structures on any number of semiconductor materials, including germanium (Ge), silicon germanium (SiGe), and III-V material systems. In general, an interfacial passivation layer is used as a liner between the semiconductor surface (such as... Agent:

20110140231 - Integrated microelectronic device with through-vias: An integrated microelectronic device is formed from a substrate having a first side and a second side and including a doped active zone (2) in the first side of the substrate. A circuit component is situated in the doped active zone. A through silicon via extends between the second side... Agent: Stmicroelectronics (crolles 2) Sas

20110140232 - Methods of forming a thermal conduction region in a semiconductor structure and structures resulting therefrom: An electronic system, method of manufacture of a semiconductor structure, and one or more semiconductor structures are disclosed. For example, a method of manufacture of a semiconductor structure is disclosed, which includes forming a semiconductor layer over a thermal conduction layer, forming an isolation region over the thermal conduction layer,... Agent: Intersil Americas Inc.

20110140233 - Parasitic vertical pnp bipolar transistor and its fabrication method in bicmos process: A parasitic vertical PNP bipolar transistor in BiCMOS process comprises a collector, a base and an emitter. The collector is formed by active region with p-type ion implanting layer (P type well in NMOS). It connects a P-type conductive region, which formed in the bottom region of shallow trench isolation... Agent:

20110140234 - Fuse of semiconductor device and method for forming the same: A fuse of a semiconductor device comprises: a first insulating film formed over a semiconductor substrate; a conductive pattern formed over the first insulating film; a fuse metal formed over the conductive pattern; a contact plug electrically coupling the conductive pattern and the fuse metal; and an energy absorbent pattern... Agent: Hynix Semiconductor Inc.

20110140235 - Semiconductor device and method of manufacturing semiconductor device: A semiconductor device include an insulating interlayer formed over a substrate; an electrical fuse which is composed of a first wiring formed in the insulating interlayer, and has a cutting portion; and a second wiring and a third wiring, formed respectively on both sides of the cutting portion to extend... Agent: Renesas Electronics Corporation

20110140236 - Integrated circuit with pads connected by an under-bump metallization and method for production thereof: A semiconductor device includes a semiconductor chip. External connection pads and further pads are disposed over a surface of the semiconductor chip. Selected ones of the further pads are electrically connected to one another so as to activate selected functions within the semiconductor chip.... Agent:

20110140238 - Semiconductor device and manufacturing method thereof: According to an embodiment, there is provided a method for manufacturing a semiconductor device having a ferroelectric capacitor including a lower electrode, an upper electrode, and a dielectric film provided between the lower electrode and the upper electrode. The method includes firstly forming a conductive film on the lower electrode.... Agent: Kabushiki Kaisha Toshiba

20110140237 - Semiconductor package: A semiconductor package includes a semiconductor chip and a passive element. The semiconductor chip has a semiconductor chip s body which possesses a first surface and a second surface facing away from the first surface, and a circuit section is formed in the semiconductor chip body. The passive element includes... Agent: Hynix Semiconductor Inc.

20110140239 - High voltage bipolar transistor with pseudo buried layers: A high voltage bipolar transistor with shallow trench isolation (STI) comprises the areas of a collector formed by implanting first electric type impurities into active area and connected with pseudo buried layers at two sides; Pseudo buried layers which are formed by implanting high dose first type impurity through the... Agent:

20110140240 - Varactor diodes: An improved varactor diode is obtained by providing a substrate having a first surface and in which are formed a first N region having a first peak dopant concentration located at a first depth beneath the surface, and a first P region having a second peak dopant concentration greater than... Agent: Freescale Semiconductor, Inc.

20110140241 - Processes for production of silicon ingot, silicon wafer and epitaxial wafer , and silicon ingot: A process for production of a silicon ingot, by which a silicon ingot exhibiting a low resistivity even in the top portion can be produced. The process for the production of a silicon ingot comprises includes withdrawing a silicon seed crystal (13) from a silicon melt (11) to grow a... Agent: Sumco Corporation

20110140242 - Stress compensation for large area gallium nitride or other nitride-based structures on semiconductor substrates: A method includes forming a stress compensating stack over a substrate, where the stress compensating stack has compressive stress on the substrate. The method also includes forming one or more Group III-nitride islands over the substrate, where the one or more Group III-nitride islands have tensile stress on the substrate.... Agent: National Semiconductor Corporation

20110140243 - Semiconductor device and manufacturing method thereof: A semiconductor device comprises a semiconductor substrate, a first electrode formed on a first main surface of the semiconductor substrate, and a second electrode formed on a second main surface of the semiconductor substrate. The semiconductor substrate includes a first region in which a density of oxygen-vacancy defects is greater... Agent: Toyota Jidosha Kabushiki Kaisha

20110140244 - Method for routing a chamfered substrate: The invention relates to a method for routing a chamfered substrate, having applications in the field of electronics, optics, or optoelectronics, which involves depositing a layer of a protective material on a peripheral annular zone of the substrate preferably with the aid of a plasma, partially etching the protective material... Agent:

20110140245 - Structure for inhibiting back end of line damage from dicing and chip packaging interaction failures: A semiconductor product comprises a semiconductor substrate having a top surface and a bottom surface including a semiconductor chip. The semiconductor substrate has a top surface and a perimeter. A barrier is formed in the chip within the perimeter. An Ultra Deep Isolation Trench (UDIT) is cut in the top... Agent: International Business Machines Corporation

20110140246 - Delta-doping at wafer level for high throughput, high yield fabrication of silicon imaging arrays: Systems and methods for producing high quantum efficiency silicon devices. A silicon MBE has a preparation chamber that provides for cleaning silicon surfaces using an oxygen plasma to remove impurities and a gaseous (dry) NH3+NF3 room temperature oxide removal process that leaves the silicon surface hydrogen terminated. Silicon wafers up... Agent: California Institute Of Technology

20110140247 - Integrated circuit packaging system with shielded package and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing a substrate assembly having a connection path; mounting a base device over the substrate assembly with a mount layer; mounting a stack device over the base device and having a stack die and a stack-organic-material; forming a stack-through-via... Agent:

20110140248 - Semiconductor device and manufacturing method thereof: A semiconductor device and manufacturing method thereof are disclosed. The device comprises a semiconductor die, a passivation layer, a wiring redistribution layer (RDL), an Ni/Au layer, and a solder mask. The semiconductor die comprises a top metal exposed in an active surface thereof. The passivation layer overlies the active surface... Agent:

20110140250 - Leadframe for semiconductor package: A semiconductor package including a lead frame comprising a frame including both a ground ring and a chip mounting board located therein. Extending between the ground ring and the chip mounting board are a plurality of elongate slots or apertures. The ground ring is formed to include recesses within the... Agent:

20110140249 - Tie bar and mold cavity bar arrangements for multiple leadframe stack package: A semiconductor chip package having multiple leadframes is disclosed. Packages can include a first leadframe having a first plurality of electrical leads and a die attach pad having a plurality of tie bars, a second leadframe generally parallel to the first leadframe and having a second plurality of electrical leads,... Agent: National Semiconductor Corporation

20110140253 - Dap ground bond enhancement: A variety of semiconductor package arrangements and packaging methods are described that improve the reliability of bonding wires that down bond a die to a die attach pad. In one aspect, selected portions of the top surface of a lead frame (which may be in panel form) are plated (e.g.,... Agent: National Semiconductor Corporation

20110140251 - Integrated circuit package system with removable backing element having plated terminal leads and method of manufacture thereof: A method of manufacture of an integrated circuit package system includes providing a first frame having a first removable backing element connecting a first die attach pad and a first plurality of terminal leads. A first die is attached to the first die attach pad. A substrate is provided. A... Agent:

20110140252 - Integrated circuit packaging system with dual row lead-frame having top and bottom terminals and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: forming outer leads having outer terminal sections, the outer terminal sections having an upper terminal and a bottom terminal; forming inner leads having inner terminal sections wider than a distance between the outer terminal sections of the outer leads,... Agent:

20110140254 - Panel based lead frame packaging method and device: A packaged semiconductor die has a preformed lead frame with a central recessed portion, and a plurality of conductive leads. An integrated circuit die has a top surface and a bottom surface opposite thereto, with the top surface having a plurality of bonding pads for electrical connection to the die.... Agent: Silicon Storage Technology, Inc.

20110140256 - Semiconductor device, substrate and semiconductor device manufacturing method: The semiconductor device can prevent damages on a semiconductor chip even when a soldering material is used for bonding the back surface of the semiconductor chip to the junction plane of a chip junction portion such as an island or a die pad. This semiconductor device includes a semiconductor chip... Agent: Rohm Co., Ltd.

20110140255 - Semiconductor die package including ic driver and bridge: A semiconductor die package. Embodiments of the semiconductor die package are usable in backlight circuitry. Systems in packages may include a bridge circuit or a part thereof, and a integrated circuit die, such as a driver die, encapsulated by a molding material or other package. The bridge circuit may be... Agent:

20110140258 - Integrated circuit packaging system with package stacking and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system including: fabricating a base package substrate having component pads and stacking pads; coupling a base integrated circuit die to the component pads; forming a penetrable encapsulation material for enclosing the base integrated circuit die and the component pads on the... Agent:

20110140259 - Integrated circuit packaging system with stacking interconnect and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: fabricating a base package substrate; coupling a conductive column lead frame to the base package substrate by: providing a lead frame support, patterning a conductive material on the lead frame support including forming an interconnect securing structure, and coupling... Agent:

20110140257 - Printed circuit board having embedded dies and method of forming same: A package includes a printed circuit board (PCB) having a first side and a second side and a thickness between the first side and the second side and a stacked die including a top die mounted on a bottom die, the bottom die being at least partially embedded in the... Agent: Qualcomm Incorporated

20110140260 - Chip assembly with chip-scale packaging: A chip assembly may comprise a substrate having a top surface and a bottom surface. The chip assembly may comprise a first die having a circuit surface and a connecting surface, the circuit surface comprising one or more integrated circuits. The chip assembly may comprise a chip-scale frame having an... Agent: Sierra Monolithics, Inc.

20110140261 - Integrated circuit packaging system with interconnect and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing a substrate external layer having an opening; forming a convex interconnect within the opening with the convex interconnect having a protrusion and a horizontal flange substantially horizontally coplanar with the substrate external layer; forming an insulation layer over... Agent:

20110140262 - Module package with embedded substrate and leadframe: An integrated circuit package is described that includes a substrate, a leadframe and one or more integrated circuits that are positioned between the substrate and the leadframe. Multiple electrical components may be attached to one or both sides of the substrate. The active face of the integrated circuit is electrically... Agent: National Semiconductor Corporation

20110140263 - Semiconductor device and method of forming pip with inner known good die interconnected with conductive bumps: A PiP semiconductor device has an inner known good semiconductor package. In the semiconductor package, a first via is formed in a temporary carrier. A first conductive layer is formed over the carrier and into the first via. The first conductive layer in the first via forms a conductive bump.... Agent: Stats Chippac, Ltd.

20110140264 - Semiconductor device and manufacturing method thereof: There is provided a low-cost semiconductor device that commercial and quality-assured (inspected) chip size packages can be stacked and has a small co-planarity value and a high mounting reliability. A semiconductor device in which a flexible circuit substrate is adhered to at least a part of a lateral side of... Agent:

20110140265 - Packaging of silicon wafers and mating pieces: e

20110140266 - Electrostatic capacitance-type input device and method of manufacturing thereof: An electrostatic capacitance-type input device includes: a first translucent conductive film that configures a first electrode that extends in a first direction in an input area on a substrate and second electrodes that extend in a second direction intersecting the first direction in the input area and are disconnected in... Agent: Sony Corporation

20110140267 - Electronic device package and method for fabricating the same: The invention provides an electronic device package and a method for fabricating the same. The electronic device package includes a carrier wafer. An electronic device chip with a plurality of conductive pads thereon is disposed over the carrier wafer. An isolation laminating layer includes a lower first isolation layer, which... Agent:

20110140268 - High-density inter-package connections for ultra-thin package-on-package structures, and processes of forming same: An apparatus includes a coreless mounting substrate and an interposer disposed on the coreless mounting substrate with a chip disposed in a recess in the interposer and upon the coreless substrate. The apparatus may include an inter-package solder bump in contact with an interconnect channel in the interposer, and a... Agent:

20110140269 - Semiconductor device and method for manufacturing the same: A semiconductor device includes an electrode pad and a protective insulating film having an opening to expose the electrode pad. The semiconductor device further includes a bump (resin core bump) that includes a bump core (resin core) formed on the protective insulating film and a conductive layer formed on the... Agent: Renesas Electronics Corporation

20110140270 - Semiconductor mounting substrate and method for manufacturing the same: A semiconductor mounting substrate according to the present invention comprises: a substrate; a semiconductor device, mounted on this substrate; solder bumps, which connect the semiconductor device and the substrate; a first resin, filled in a space between the semiconductor device and the substrate; and electronic components, mounted on a face... Agent:

20110140271 - integrated circuit chip with pyramid or cone-shaped conductive pads for flexible c4 connections and a method of forming the integrated circuit chip: Disclosed is a chip and method of forming the chip with improved conductive pads that allow for flexible C4 connections with a chip carrier or with another integrated circuit chip. The pads have a three-dimensional geometric shape (e.g., a pyramid or cone shape) with a base adjacent to the surface... Agent: International Business Machines Corporation

20110140272 - Ball grid array package enhanced with a thermal and electrical connector: A package is provided. The package includes a substrate having first and second surfaces, a stiffener coupled to the first surface of the substrate, and a thermal connector coupled to the second surface of the substrate that is configured to be coupled to a printed circuit board.... Agent: Broadcom Corporation

20110140273 - Semiconductor devices including voltage switchable materials for over-voltage protection: Semiconductor devices are provided that employ voltage switchable materials for over-voltage protection. In various implementations, the voltage switchable materials are substituted for conventional die attach adhesives, underfill layers, and encapsulants. While the voltage switchable material normally functions as a dielectric material, during an over-voltage event the voltage switchable material becomes... Agent:

20110140274 - Forming thick metal interconnect structures for integrated circuits: Embodiments of an apparatus and methods for forming thick metal interconnect structures for integrated structures are generally described herein. Other embodiments may be described and claimed.... Agent:

20110140276 - Interlayer insulating film, interconnection structure, and methods of manufacturing the same: This invention provides an interlayer insulating film for a semiconductor device, which has low permittivity, is free from the evolution of gas such as CFx and SiF4 and is stable, and a wiring structure comprising the same. In an interlayer insulating film comprising an insulating film provided on a substrate... Agent: Foundation For Advancement Of International Science

20110140275 - Semiconductor device and manufacturing method of the same: In a semiconductor device, capacitance between copper interconnections is decreased and the insulation breakdown is improved simultaneously, and a countermeasure is taken for misalignment via by a manufacturing method including the steps of forming an interconnection containing copper as a main ingredient in an insulative film above a substrate, forming... Agent: Hitachi, Ltd.

20110140277 - Semiconductor device: A semiconductor device includes a semiconductor substrate including a main surface; a plurality of first interconnections formed in a capacitance forming region defined on the main surface and extending in a predetermined direction; a plurality of second interconnections each adjacent to the first interconnection located at an edge of the... Agent: Renesas Device Design Corp.

20110140278 - Optical proximity correction aware integrated circuit design optimization: An EDA method is implemented for modifying a layout file after place and route. The method includes storing a library of shape modifications for cells in the design library used for implementation of the circuit. The library of shape modifications includes the results of process-specific calibration of the shape modifications... Agent: Synopsys, Inc.

20110140280 - Semiconductor apparatus capable of error revision using pin extension technique and design method therefor: A semiconductor apparatus and a design method for the semiconductor apparatus allow debugging or repairs by using a spare cell. The semiconductor apparatus includes a plurality of metal layers. At least one repair block performs a predetermined function. A spare block is capable of substituting for a function of the... Agent: Iucf-hyu (industry - University Cooperation Foundation Hanyang Univ.)

20110140282 - Semiconductor device and semiconductor device manufacturing method: A semiconductor device includes: a semiconductor substrate, first and second internal electrodes provided on a surface of the semiconductor substrate; a first through electrode which penetrates through the semiconductor substrate in a thickness direction and is electrically connected to the first internal electrode; and a second through electrode connected to... Agent: Panasonic Corporation

20110140279 - Semiconductor structure incorporating multiple nitride layers to improve thermal dissipation away from a device and a method of forming the structure: Disclosed are embodiments of a semiconductor structure that incorporates multiple nitride layers stacked between the center region of a device and a blanket oxide layer. These nitride layers are more thermally conductive than the blanket oxide layer and, thus provide improved heat dissipation away from the device. Also disclosed are... Agent: International Business Machines Corporation

20110140281 - Substrate for electronic device, stack for electronic device, electronic device, and method for manufacturing the same: A method for manufacturing an electronic device, including a step of aligning and stacking a plurality of substrates, each of the plurality of substrates having a plurality of vertical conductors and magnetic films, the vertical conductors being directed along a thickness direction of the substrate and distributed in a row... Agent: Napra Co., Ltd.

20110140283 - Integrated circuit packaging system with a stackable package and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: forming a base assembly having a cavity and a through conductor adjacent to the cavity; connecting a first device to the base assembly with the first device within the cavity; connecting a second device to the base assembly with... Agent:

20110140286 - Multilayer wiring substrate mounted with electronic component and method for manufacturing the same: A multilayer wiring substrate mounted with an electronic component includes an electronic component, a core material layer having a first opening for accommodating the electronic component, a resin layer which is formed on one surface of the core material layer and which has a second opening greater than the first... Agent: Shinko Electric Industries Co., Ltd.

20110140284 - Optoelectronic component: An optoelectronic component includes a carrier with a mounting side and having at least one functional element, at least one substrateless optoelectronic semiconductor chip with a top and an opposed bottom and is electrically conductive by way of the top and the bottom, wherein the bottom faces the mounting side... Agent: Osram Opto Semiconductors Gmbh

20110140285 - Semiconductor device: A semiconductor device with semiconductor chips stacked thereon is provided. The semiconductor device is reduced in size and thickness. In a first memory chip and a second memory chip, first pads of the first memory chip located at a lower stage and hidden by the second memory chip located at... Agent: Renesas Electronics Corporation

20110140287 - Integrated circuit packaging system with bond wire pads and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: forming a device over a substrate including a bond wire pad row located between a perimeter of the substrate and the device; configuring the bond wire pad row to include three sided bond wire pads that horizontally overlap; and... Agent:

20110140288 - Systems and methods employing a physically asymmetric semiconductor device having symmetrical electrical behavior: An integrated circuit device comprising a first elongate structure and a second elongate structure arranged parallel to each other and defining a space therebetween. The integrated circuit device also includes conductive structures distributed in the space between the first and second elongate structures. At least a first one of the... Agent: Qualcomm Incorporated

20110140289 - Resin composition for encapsulating optical semiconductor element and optical semiconductor device: A resin composition containing a silica-based filler which differs in refractive index by ±0.03 from the curable base resin and has a thermal conductivity no lower than 0.5 W/m·K, and a light-emitting diode encapsulated with said resin composition. The resin composition is preferably prepared from a curable silicone resin which... Agent:

20110133147 - Continuous plane of thin-film materials for a two-terminal cross-point memory: A structure for a memory device including a plurality of substantially planar thin-film layers or a plurality of conformal thin-film layers is disclosed. The thin-film layers form a memory element that is electrically in series with first and second cladded conductors and operative to store data as a plurality of... Agent: Unity Semiconductor Corporation

20110133148 - Resistive memory device and method of fabricating the same: Provided are resistive memory devices and methods of fabricating the same. The resistive memory devices and the methods are advantageous for high integration because they can provide a multilayer memory cell structure. Also, the parallel conductive lines of adjacent layers do not overlap each other in the vertical direction, thus... Agent: Electronics And Telecommunications Research Institute

20110133150 - Phase change memory cell with filled sidewall memory element and method for fabricating the same: Memory cells are described along with methods for manufacturing. A memory cell described herein includes a bottom electrode, a top electrode overlying the bottom electrode, a via having a sidewall extending from a bottom electrode to a top electrode, and a memory element electrically coupling the bottom electrode to the... Agent: Macronix International Co., Ltd.

20110133149 - Resistance change memory and manufacturing method thereof: According to one embodiment, a resistance change memory includes a first interconnect line extending in a first direction, a second interconnect line extending in a second direction intersecting with the first direction, and a cell unit which is provided between the first interconnect line and the second interconnect line and... Agent:

20110133151 - Memory cell that includes a carbon-based memory element and methods of forming the same: A method of forming a reversible resistance-switching metal-insulator-metal structure is provided, the method including forming a first non-metallic conducting layer, forming a non-conducting layer above the first non-metallic conducting layer, forming a second non-metallic conducting layer above the non-conducting layer, etching the first non-metallic conducting layer, non-conducting layer and second... Agent: Sandisk 3d LLC

20110133152 - Resistive memory device and method for fabricating the same: A resistive memory device is provided. The resistive memory device includes a bottom electrode, a resistance-variable layer, and a top electrode. The resistance-variable layer is disposed on the bottom electrode. The top electrode is disposed on the resistance-variable layer. The resistance-variable layer includes a conductive polymer layer that reacts with... Agent: Electronics And Telecommunications Research Institute

20110133153 - Porous nanostructure and method of manufacturing the same: Provided are a porous nanostructure and a method of manufacturing the same. The porous nanostructure includes a plurality of pores disposed on an exterior surface of a nanostructure, wherein at least a portion of the plurality of pores extend inside the nanostructure.... Agent: Samsung Electronics Co., Ltd.

20110133156 - Light emitting device and light emitting device package including the same: Provided are a light emitting device and a light emitting device package including the same. The light emitting device comprises a first conductive type semiconductor layer, an active layer comprising a plurality of quantum well layers and a plurality of barrier layers, which are alternately laminated on the first conductive... Agent:

20110133155 - Light emitting device, light emitting device package and lighting system: Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a first conductive type semiconductor layer; an active layer including a barrier layer and a well layer alternately disposed on the first conductive type semiconductor layer; and a second conductive... Agent:

20110133154 - Light-emitting device: A light emitting device includes: a laminated body including a first conductivity type layer, a light emitting layer provided on the first conductivity type layer, and a second conductivity type layer provided on the light emitting layer, the laminated body being made of InxGayAl1-x-yN (0≦x≦1, 0≦y≦1, x+y≦1); a first electrode... Agent: Kabushiki Kaisha Toshiba

20110133158 - Method for fabricating ingan-based multi-quantum well layers: A method for fabricating quantum wells by using indium gallium nitride (InGaN) semiconductor material includes fabricating a potential well on a layered group III-V nitride structure at a first predetermined temperature in a reactor chamber by injecting into the reactor chamber an In precursor gas and a Ga precursor gas.... Agent: Lattice Power (jiangxi) Corporation

20110133159 - Semiconductor light-emitting device with passivation in p-type layer: A semiconductor light-emitting device includes a substrate, a first doped semiconductor layer, a second doped semiconductor layer situated above the first doped semiconductor layer, and a multi-quantum-well (MQW) active layer situated between the first and the second doped layers. The device also includes a first electrode coupled to the first... Agent: Lattice Power (jiangxi) Corporation

20110133157 - Surface plasmon dispersion engineering via double-metallic au/ag layers for nitride light-emitting diodes: A double-metallic deposition process is used whereby adjacent layers of different metals are deposited on a substrate. The surface plasmon frequency of a base layer of a first metal is tuned by the surface plasmon frequency of a second layer of a second metal formed thereon. The amount of tuning... Agent: Lehigh University

20110133160 - Nanowire structured photodiode with a surrounding epitaxially grown p or n layer: An embodiment relates to a device comprising a substrate, a nanowire and a doped epitaxial layer surrounding the nanowire, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength... Agent: Zena Technologies, Inc.

20110133162 - Gate-all-around nanowire field effect transistors: A method for forming a nanowire field effect transistor (FET) device, the method includes forming a suspended nanowire over a semiconductor substrate, forming a gate structure around a portion of the nanowire, forming a protective spacer adjacent to sidewalls of the gate and around portions of nanowire extending from the... Agent: International Business Machines Corporation

20110133163 - Nanowire fet having induced radial strain: An intermediate process device is provided and includes a nanowire connecting first and second silicon-on-insulator (SOI) pads, a gate including a gate conductor surrounding the nanowire and poly-Si surrounding the gate conductor and silicide forming metal disposed to react with the poly-Si to form a fully silicided (FUSI) material to... Agent: International Business Machines Corporation

20110133166 - Nanowire fet having induced radial strain: A device is provided and includes a nanowire connecting first and second silicon-on-insulator (SOI) pads and a gate including a gate conductor surrounding the nanowire and a fully silicided material surrounding the gate conductor to radially strain the nanowire.... Agent: International Business Machines Corporation

20110133164 - Omega shaped nanowire field effect transistors: A method for forming a nanowire field effect transistor (FET) device includes forming a nanowire on a semiconductor substrate, forming a first gate structure on a first portion of the nanowire, forming a first protective spacer adjacent to sidewalls of the first gate structure and over portions of the nanowire... Agent: International Business Machines Corporation

20110133161 - Omega shaped nanowire tunnel field effect transistors: A method for forming a nanowire tunnel field effect transistor device includes forming a nanowire connected to a first pad region and a second pad region, the nanowire including a core portion and a dielectric layer, forming a gate structure on the dielectric layer of the nanowire, forming a first... Agent: International Business Machines Corporation

20110133167 - Planar and nanowire field effect transistors: A method for forming an integrated circuit, the method includes forming a first nanowire suspended above an insulator substrate, the first nanowire attached to a first silicon on insulator (SOI) pad region and a second SOI pad region that are disposed on the insulator substrate, a second nanowire disposed on... Agent: International Business Machines Corporation

20110133168 - Quantum-well-based semiconductor devices: Quantum-well-based semiconductor devices and methods of forming quantum-well-based semiconductor devices are described. A method includes providing a hetero-structure disposed above a substrate and including a quantum-well channel region. The method also includes forming a source and drain material region above the quantum-well channel region. The method also includes forming a... Agent:

20110133165 - Self-aligned contacts for nanowire field effect transistors: A method for forming a nanowire field effect transistor (FET) device includes forming a nanowire over a semiconductor substrate, forming a gate structure around a portion of the nanowire, forming a capping layer on the gate structure; forming a first spacer adjacent to sidewalls of the gate and around portions... Agent: International Business Machines Corporation

20110133169 - Gate-all-around nanowire tunnel field effect transistors: A method for forming a nanowire tunnel field effect transistor (FET) device includes forming a nanowire suspended by first and second pad regions over a semiconductor substrate, the nanowire including a core portion and a dielectric layer, forming a gate structure around a portion of the dielectric layer, forming a... Agent: International Business Machines Corporation

20110133171 - Arylamine compound and organic electroluminescence device: wherein X represents a single bond, CH or CH2, or N or NH; Ar1 and Ar2 are respectively the same and each represents a substituted or unsubstituted phenylene group; R1, R2, R3, and R4 each independently represents an aryl group, wherein the aryl group may be substituted by a diarylamine... Agent: Shinshu University

20110133173 - Charge transport compositions and electronic devices made with such compositions: The present invention relates to charge transport compositions. The invention further relates to electronic devices in which there is at least one active layer comprising such charge transport compositions.... Agent: E. I. Du Pont De Nemours And Company

20110133172 - Light-emitting element, light-emitting device, and electronic device: The light-emitting element of the present invention includes a light-emitting layer and a layer for controlling movement of carriers between a pair of electrodes. The layer for controlling movement of carriers includes a first organic compound having a carrier transporting property and a second organic compound for reducing the carrier... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110133174 - N-type conjugated compounds containing diborylene units, methods of making, and a device comprising the compound: N-type conjugated compounds are disclosed which include at least one conjugated electron-acceptor unit The conjugated electron-acceptor unit includes a diborylene unit. The compounds find application in an electron acceptor layer of an electronic device.... Agent: The University Of Akron

20110133170 - Organic light emitting display device and method of manufacturing organic light emitting display device: There is provided an organic light emitting display device including a first substrate; an organic light emitting unit formed on the first substrate; a second substrate disposed on the organic light emitting unit; and an adhesive unit for adhering the first substrate and the second substrate to each other, wherein... Agent: Samsung Mobile Display Co., Ltd.,

20110133181 - Display device: One object is to provide a transistor including an oxide semiconductor film which is used for the pixel portion of a display device and has high reliability. A display device has a first gate electrode; a first gate insulating film over the first gate electrode; an oxide semiconductor film over... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110133183 - Display device: A display device includes a pixel portion in which a pixel electrode layer is arranged in a matrix, and an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen is provided corresponding to the pixel electrode layer.... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110133175 - High-performance heterostructure light emitting devices and methods: A layered heterostructure light emitting device comprises at least a substrate, an n-type gallium nitride-based semi-conductor cladding layer region, a p-type gallium nitride-based semiconductor cladding layer region, a p-type zinc oxide-based hole injection layer region, and an ohmic contact layer region. Alternatively, the device may also comprise a capping layer... Agent:

20110133178 - Semiconductor device: One object is to provide a p-channel transistor including an oxide semiconductor. Another object is to provide a complementary metal oxide semiconductor (CMOS) structure of an n-channel transistor including an oxide semiconductor and a p-channel transistor including an oxide semiconductor. A p-channel transistor including an oxide semiconductor includes a gate... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110133182 - Semiconductor device: An object is to provide a UV sensor with high accuracy, which can be manufactured at low cost and formed over a flexible substrate. A semiconductor device includes a transistor having an oxide semiconductor film, and a voltage source electrically connected to a gate of the transistor, in which a... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110133179 - Semiconductor device and manufacturing method thereof: A manufacturing method of a semiconductor device, which includes the steps of forming a gate electrode layer over a substrate having an insulating surface, forming a gate insulating layer over the gate electrode layer, forming an oxide semiconductor layer over the gate insulating layer, forming a source electrode layer and... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110133180 - Semiconductor device and manufacturing method thereof: One embodiment of the present invention is to achieve high mobility in a device using an oxide semiconductor and provide a highly reliable display device. An oxide semiconductor layer including a crystal region in which c-axis is aligned in a direction substantially perpendicular to a surface is formed and an... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110133177 - Semiconductor element, semiconductor device, and method for manufacturing the same: The semiconductor element includes an oxide semiconductor layer on an insulating surface; a source electrode layer and a drain electrode layer over the oxide semiconductor layer; a gate insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer; and a gate electrode layer over... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110133176 - Transistor and electronic apparatus including same: Transistors and electronic apparatuses including the same are provided, the transistors include a channel layer on a substrate. The channel layer includes a zinc (Zn)-containing oxide. The transistors include a source and a drain, respectively, contacting opposing ends of the channel layer, a gate corresponding to the channel layer, and... Agent: Snu R&db Foundation

20110133186 - Process for manufacturing a semiconductor wafer having soi-insulated wells and semiconductor wafer thereby manufactured: A process for manufacturing a semiconductor wafer including SOI-insulation wells includes forming, in a die region of a semiconductor body, buried cavities and semiconductor structural elements, which traverse the buried cavities and are distributed in the die region. The process moreover includes the step of oxidizing selectively first adjacent semiconductor... Agent: Stmicroelectronics, S.r.l.

20110133184 - Semiconductor device: A semiconductor device includes an insulating film formed on a substrate; an interconnect layer including a plurality of interconnects formed in the insulating film; and a pad formed on the insulating film. In a region containing at least a part of a section below the pad, a narrow spacing region... Agent:

20110133185 - Semiconductor device formation substrate and semiconductor device manufacturing method: A dummy columnar electrode having the same outer size and cross section as a columnar electrode formed in a semiconductor device formation region is formed in the peripheral part of a semiconductor device test region in the same process as the columnar electrode. The semiconductor device test regions are provided... Agent: Casio Computer Co., Ltd

20110133187 - Photo detector and method of manufacturing the same: Provided is a manufacturing method of a photo detector. The method includes: forming a first single crystal semiconductor layer and an optical waveguide protruding from the first single crystal semiconductor layer; forming an insulation layer on the first single crystal semiconductor layer to cover the optical waveguide; forming an opening... Agent: Electronics And Telecommunications Research Institute

20110133188 - Process for simultaneous deposition of crystalline and amorphous layers with doping: One embodiment of the present invention relates to method for the concurrent deposition of multiple different crystalline structures on a semiconductor body utilizing in-situ differential epitaxy. In one embodiment of the present invention a preparation surface is formed, resulting in two distinct crystalline regions, a monocrystalline silicon substrate region and... Agent: Infineon Technologies Ag

20110133192 - Method of forming conductive pattern and organic thin film transistor: In the present invention, provided is a method of forming a conductive pattern exhibiting excellent adhesion of the conductive pattern to a substrate and high fine line reproduction via a simple process, and an organic thin film transistor exhibiting excellent element properties. Disclosed is a method of forming a conductive... Agent: Konica Minolta Holdings, Inc.

20110133189 - Nmos architecture involving epitaxially-grown in-situ n-type-doped embedded esige:c source/drain targeting: An NMOS transistor is formed with improved manufacturability. An embodiment includes forming N-type doped embedded silicon germanium containing carbon (eSiGe:C) in source/drain regions of a substrate, and amorphizing the eSiGe:C. The use of eSiGe:C provides a reduction in extension silicon and dopant loss, improved morphology, increased wafer throughput, improved short... Agent: Globalfoundries Inc.

20110133191 - Semiconductor device and manufacturing method thereof: A semiconductor device includes an oxide semiconductor layer including a crystalline region over an insulating surface, a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer, a gate insulating layer covering the oxide semiconductor layer, the source electrode layer, and the drain electrode layer,... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110133190 - Thin-film transistor and intermediate of thin-film transistor: This thin-film transistor according to another aspect of the present invention includes a drain electrode film and a source electrode film, each of which includes a composite copper alloy film including a copper alloy underlayer containing an oxygen-Ca (Al, Sn, Sb) concentrated layer that is formed so as to come... Agent: Mitsubishi Materials Corporation

20110133194 - Pixel structure: A pixel structure includes a scan line, a data line, a gate electrode electrically connected to the scan line, a semiconductor layer disposed on the gate electrode, a drain electrode, an extending electrode, and a pixel electrode. The scan line and the data line cross each other, and are insulated.... Agent:

20110133193 - Thin film transistor substrate and the method thereof: A thin film transistor array panel includes a gate line, a gate insulating layer that covers the gate line, a semiconductor layer that is disposed on the gate insulating layer, a data line and drain electrode that are disposed on the semiconductor layer, a passivation layer that covers the data... Agent:

20110133195 - Thin film transistor, display device including the same, and method of manufacturing the display device: A thin film transistor, a display device including the same, and a method of manufacturing the display device, the thin film transistor including a substrate; a gate electrode on the substrate; a gate insulating layer on the gate electrode; a semiconductor layer on the gate insulating layer; and source/drain electrodes... Agent:

20110133196 - Semiconductor device: An object is to provide a highly reliable transistor and a semiconductor device including the transistor. A semiconductor device including a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film over the gate insulating film; and a source electrode and a drain electrode over the... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110133197 - Thin film transistor and manufacturing method thereof: A bottom gate-type thin film transistor includes a gate insulating film, an interlayer insulating film formed on the gate insulating film, having an opening which is formed in a formation region of a gate electrode, and a semiconductor film formed on the interlayer insulating film so as to cover the... Agent: Hitachi Displays, Ltd.

20110133198 - Thin film transistor, display device including the same and manufacturing method thereof: A thin film transistor, a display device, and a manufacturing method thereof. The thin film transistor includes a control electrode, a semiconductor overlapping the control electrode, and an input electrode and an output electrode disposed on or under the semiconductor and opposite to each other. The semiconductor includes a first... Agent: Samsung Electronics Co., Ltd.

20110133199 - Arrray substrate for liquid crystal display device and method of fabricating the same: An array substrate for an LCD device includes a first TFT including a first semiconductor layer, a first gate electrode, wherein the first gate electrode is directly over the first semiconductor layer; a first protrusion extending from the first gate electrode along an edge of the first semiconductor layer; a... Agent:

20110133200 - Dual gate layout for thin film transistor: A dual gate layout of a thin film transistor of liquid crystal display to alleviate dark current leakage is disclosed. The layout includes (1) a polysilicon on a substrate having a L-shaped or a snake shaped from top-view, which has a heavily doped source region, a first lightly doped region,... Agent:

20110133201 - Electronic circuit: An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layer is less than 1500 Å, e.g., between 100 and 750 Å. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110133202 - High throughput recrystallization of semiconducting materials: Methods for making and/or treating articles of semiconducting material are disclosed. In various methods, a first article of semiconducting material is provided, the first article of semiconducting material is heated sufficiently to melt the semiconducting material, and the melted semiconducting material is solidified in a direction substantially parallel to a... Agent:

20110133206 - Compound semiconductor device: At a gate electrode formed on a compound semiconductor layer with a Schottky junction, a diffusion preventing layer made of TixW1-xN (0<x<1) for suppressing the metal of a low-resistance metal layer from diffusing to the compound semiconductor layer is provided between a Ni layer forming a Schottky barrier with the... Agent: Eudyna Devices, Inc.

20110133205 - Field-effect transistor: A field-effect transistor provided with a channel layer, a carrier supply layer forming a heterojunction with the channel layer, a recessed portion recessed from a surface of the carrier supply layer, a first insulating layer formed at least along the recessed portion, a first gate electrode formed on the first... Agent: Sharp Kabushiki Kaisha

20110133209 - Gan substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device: A GaN substrate on which an epitaxially grown layer of good quality can be formed is obtained. A GaN substrate as a group III nitride substrate has a surface in which the number of chlorine atoms per square centimeter of the surface is not more than 2×1014, and the number... Agent: Sumitomo Electric Industries, Ltd.

20110133207 - Group iii nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device: A group III nitride substrate on which an epitaxially grown layer of good quality can be formed, and a method of manufacturing the same are obtained. A GaN substrate (1) is one of the following: a group III nitride substrate, wherein the number of atoms of an acid material per... Agent: Sumitomo Electric Industries, Ltd.

20110133204 - Light emitting diode and manufacturing method thereof: A light emitting diode includes a thermal conductive substrate, an p-type GaN layer, an active layer and an n-type GaN layer sequentially stacked above the substrate and an electrode pad deposited on the n-type GaN layer. A surface of n-type GaN layer away from the active layer has a first... Agent: Hon Hai Precision Industry Co., Ltd.

20110133210 - Schottky barrier diode and method for manufacturing schottky barrier diode: A method for manufacturing a Schottky barrier diode includes the following steps. First, a GaN substrate is prepared. A GaN layer is formed on the GaN substrate. A Schottky electrode including a first layer made of Ni or Ni alloy and in contact with the GaN layer is formed. The... Agent: Sumitomo Electric Industries, Ltd.

20110133208 - Semiconductor element: Light extraction efficiency of a semiconductor light-emitting element is improved. A buffer layer, an n-type GaN layer, an InGaN emission layer, and a p-type GaN layer are laminated on a sapphire substrate in a semiconductor light-emitting element. A ZnO layer functioning as a transparent electrode is provided on the p-type... Agent: Rohm Co., Ltd.

20110133203 - Transparent ceramic photo-optical semiconductor high power switches: A photoconductive semiconductor switch according to one embodiment includes a structure of sintered nanoparticles of a high band gap material exhibiting a lower electrical resistance when excited by light relative to an electrical resistance thereof when not exposed to the light. A method according to one embodiment includes creating a... Agent:

20110133212 - Methods of making semiconductor devices having implanted sidewalls and devices made thereby: Semiconductor devices and methods of making the devices are described. The devices can be junction field-effect transistors (JFETs) or diodes such as junction barrier Schottky (JBS) diodes or PiN diodes. The devices are made using selective ion implantation using an implantation mask. The devices have implanted sidewalls formed by scattering... Agent: Semisouth Laboratories, Inc.

20110133211 - Semiconductor device and method of manufacturing the same: A wide band gap semiconductor device having a JFET, a MESFET, or a MOSFET mainly includes a semiconductor substrate, a first conductivity type semiconductor layer, and a first conductivity type channel layer. The semiconductor layer is formed on a main surface of the substrate. A recess is formed in the... Agent: Denso Corporation

20110133213 - Getter composition and organic light emitting diode device including the same: A getter composition including a moisture absorbing material and a binder having a volatility of 400 ppm or less when heated to a temperature in the range of 60° C. to 120° C. for 2 hours and an organic light emitting diode device including the getter composition... Agent: Samsung Mobile Display Co. Ltd.

20110133214 - Light sensor device and manufacturing method: A light sensor device comprises a substrate (10) having a well (12) defined in one surface. At least one light sensor (14) is formed at the base of the well (12), and an optical light guide (18) in the form of a transparent tunnel (18) within an opaque body (20)... Agent: Nxp B.v.

20110133221 - Led and led package: A light emitting device (LED) and Package of the same are provided. The LED comprises a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a first dielectric layer, and a first electrode layer. The first conductivity type semiconductor layer, the active layer, and the... Agent:

20110133222 - Led lamp with remote phosphor coating and method of making the lamp: A light emitting diode (LED) lamp includes a base with one or more LED chips, an internal cover over the LED chips, where the cover is a translucent ceramic whose thermal conductivity is greater than glass, where the cover has an interior surface separated from the LED chips by a... Agent: Osram Sylvania Inc.

20110133217 - Led light emitting apparatus and vehicle headlamp using the same: Four LED chips are mounted on a sub-mount substrate so as to be parallel thereto. A wire 9a is installed to extend between a pad electrode 7a of two pad electrodes 7a, 7b provided in two diagonal corners of an upper surface of the LED chip 1 which pad electrode... Agent: Toyoda Gosei Co., Ltd.

20110133218 - Light emitting apparatus, method of manufacturing the same, and lighting system: Disclosed are a light emitting apparatus, a method of manufacturing the same, and a lighting system. The light emitting apparatus includes a body, a light emitting device on the body, a conductive member electrically connected with the light emitting device on the body, a resin member surrounding the light emitting... Agent:

20110133220 - Light emitting diode, method for fabricating phosphor layer, and lighting apparatus: A light emitting diode includes: a light emitting diode chip including a substrate and a light emission structure disposed on the substrate; and a phosphor layer formed to cover at least one surface of a diode upper surface and a diode lower surface, when a surface formed by the light... Agent:

20110133219 - Light emitting element array: A method of fabricating a light emitting diode array, comprising: providing a temporary substrate; forming a first light emitting stack and a second light emitting stack on the temporary substrate; forming a first insulating layer covering partial of the first light emitting stack; forming a wire on the first insulating... Agent:

20110133216 - Method of manufacturing semiconductor light emitting device and stacked structure body: According to one embodiment, a method is disclosed for manufacturing a semiconductor light emitting device. The method can include forming a plurality of semiconductor stacked bodies on a first major surface of a support substrate with a gap between two neighboring semiconductor stacked bodies. The semiconductor stacked bodies includes a... Agent: Kabushiki Kaisha Toshiba

20110133215 - Organic light emitting diode display and method of manufacturing the same: A method of manufacturing an organic light emitting diode (OLED) display includes forming an upper electrode power source line outside of a pixel area over a substrate, forming a lower electrode in the pixel area, forming at least one layer of an organic material layer in the pixel area and... Agent: Samsung Mobile Display Co. Ltd.

20110133223 - Solid state emitter packages: A solid state emitter package may include at least one electrically conductive path associated with the solid state emitter package that is not in electrical communication with any solid state emitter of the solid state emitter package, with such electrically conductive path being susceptible to inclusion of a jumper or... Agent: Cree, Inc.

20110133224 - Thermally optimised led chip-on-board module: A LED Chip-on-Board (COB) module comprises a plurality of LED die arranged on a substrate in one or more radially concentric rings about a centre point such that each LED die is azimuthally offset from neighbouring LED die. The module includes thermal conduction pads each having lateral dimensions at least... Agent: Photonstar Led Limited

20110133225 - Light collection system for an led luminaire: A light beam collection engine 320 for LED array or other multi-source light luminaries 360. The light beam collection system incorporates a light integrator 306 which collects and integrates/homogenizes the light from a plurality of light sources 140 in configured in an array 130. The engine 320 is particularly useful... Agent: Robe Lighting S.r.o

20110133226 - Organic light emitting diode device: An organic light emitting diode device including an anode, a cathode facing the anode, and a light emitting member between the anode and cathode, wherein the light emitting member includes at least two light emitting units displaying the same or different color as one another, and a charge-generation layer between... Agent:

20110133227 - Organic light emitting diode device: An organic light emitting diode device is disclosed. The organic light emitting diode device includes a light emitting layer which includes at least two blue light emitting units and at least one orange light emitting unit. Such a device exhibits excellent color characteristic and high luminance and efficiency, as well... Agent: Samsung Mobile Display Co., Ltd.

20110133228 - Led structure and the led package thereof: Disclosed is a light-emitting diode structure comprises a substrate, a plurality of light-emitting diodes on the substrate, and a conductive layer laid on the surface thereof. Each light-emitting diode comprises at least an electrical coupling side close to another electrical coupling side of an adjacent light-emitting diode. Each light-emitting diode... Agent:

20110133229 - Light emitting diode structure, led packaging structure using the same and method of forming the same: A light emitting diode (LED) structure and a LED packaging structure are disclosed. The LED structure includes a sub-mount, a stacked structure, an electrode, an isolation layer and a conductive thin film layer. The sub-mount has a first surface and a second surface opposite the first surface. The stacked structure... Agent: Industrial Technology Research Institute

20110133230 - Semiconductor light emitting device and method for manufacturing the same: Disclosed are a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises a substrate, in which concave-convex patterns are in at least a portion of a backside of the substrate, and a light emitting structure on the substrate and comprising a first... Agent: Lg Innotek Co., Inc.

20110133231 - Extensive area led having rougness surface: The structure for fixing packing of a lid (1) of an airtight container comprises a ring shaped groove (5) formed at a lower surface of the lid (1), a packing (6) that includes a tight contacting surface part (10) upwardly expanded in an outward direction for sealing gaps based on... Agent: Epiplus Co., Ltd.

20110133232 - Lead frame, its manufacturing method, and semiconductor light emitting device using the same: A lead frame comprises on a same plane, a pad part including an LED chip mounting upper surface A on which at least an LED chip is to be mounted, and a lead part including an electric connection area C in which an electric connection with the LED chip is... Agent: Toppan Printing Co., Ltd.

20110133234 - Light emitting device: A light emitting device according to the embodiment includes a first electrode; a light emitting structure including a first semiconductor layer over the first electrode, an active layer over the first semiconductor layer, and a second semiconductor layer over the second semiconductor layer; a second electrode over the second semiconductor... Agent:

20110133235 - Light emitting device and manufacturing method thereof: A light emitting device including a sapphire layer and a light emitting layer formed on the sapphire layer. The sapphire layer has a polygonal sectional shape whose internal angle is an obtuse angle, such as a regular hexagonal shape. Light emitted from the light emitting layer is totally reflected on... Agent: Disco Corporation

20110133233 - Light emitting device, light emitting device package and lighting system: A light emitting device may include a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer. A first electrode including a plurality of openings may be provided on the light emitting... Agent:

20110133238 - Light-emitting diode and method for fabrication thereof: A transparent-substrate light-emitting diode (10) has a light-emitting layer (133) made of a compound semiconductor, wherein the area (A) of a light-extracting surface having formed thereon a first electrode (15) and a second electrode (16) differing in polarity from the first electrode (15), the area (B) of a light-emitting layer... Agent: Showa Denko K.k.

20110133236 - Semiconductor light emitting device: A light emitting device that can radiate heat generated by a semiconductor light emitting element and/or a resin layer at not only a position directly under the light emitting element, but also a position remote from such a position with respect to the main plane direction is provided. In the... Agent:

20110133237 - Semiconductor light-emitting device: A semiconductor light-emitting device 10 has a semiconductor chip 12 for emitting light having a wavelength in blue to ultraviolet regions, and a sealing portion 16 formed in at least a partial region on a passage path on which the light is passed. The sealing portion 16 includes a sealing... Agent: Panasonic Corporation

20110133242 - Light emitting apparatus: A light emitting device including a contact layer, a blocking layer over the contact layer, a protection layer adjacent the blocking layer, a light emitter over the blocking layer, and an electrode layer coupled to the light emitter. The electrode layer overlaps the blocking layer and protection layer, and the... Agent:

20110133241 - Light emitting device: Disclosed are a light emitting device, a light emitting device package, a lighting system and a manufacturing method of light emitting device. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and... Agent: Lg Innotek Co., Ltd.

20110133240 - Light emitting device package and light unit having the same: Discussed is an LED package The LED package includes a body having a cavity at one side thereof, at least one of lead frames having a bottom frame and a sidewall frame in the cavity, and a light emitting device electrically connected with the lead frames.... Agent:

20110133244 - Light emitting element: A heat radiation structure of a light emitting element has leads, each lead having a plurality of leg sections, and a light emitting chip mounted on any one of the leads. The present invention can provide a high-efficiency light emitting element, in which a thermal load is reduced by widening... Agent: Seoul Semiconductor Co., Ltd.

20110133243 - Light emitting element and a production method therefor: Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a growth substrate, a first conductive semiconductor layer on the growth substrate, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, and an... Agent:

20110133245 - Melt-processable, injection-moldable thermoplastic polymer composition and semi-conductive devices fabricated therewith: A thermoplastic, hydrogenated vinyl aromatic/conjugated diene block polymer composition, especially a hydrogenated styrene/butadiene triblock composition, functions well as a LED encapsulating material in that it provides one or more of optical clarity, thermal stability, ultraviolet light resistance, melt-processability and injection-moldability. The resulting LED resists deformation after setting or hardening under... Agent: Dow Global Technologies LLC

20110133239 - Substrate structrue for light-emitting diode: Disclosed is a substrate structure for light-emitting diode (LED), including an upper layer substrate, a flexible printed circuit, a lower layer substrate, and an isolation substance. The upper layer substrate has forming a conductor pattern to provide a bonding zone and a plurality of electrode zones. The flexible printed circuit... Agent:

20110133246 - Internal combustion engine igniter semiconductor device: An internal combustion engine igniter semiconductor device is disclosed which is low cost yet secures energy withstand and reverse surge withstand capability. An IGBT includes a clamping diode between a collector electrode and a gate electrode. The IGBT has two n-type buffer layers of differing impurity concentrations between a p+... Agent: Fuji Electric Systems Co. Ltd.

20110133247 - Zener-triggered scr-based electrostatic discharge protection devices for cdm and hbm stress conditions: SCR device is modified to improve turn-on speed for CDM stress conditions. A zener diode is integrated inside SCR device to create an internal feedback and improve turn-on speed. The zener diode is designed as a p+n+ diode in the boundary of the well-substrate junction. In the preferred implementation, zener... Agent:

20110133249 - High electron mobility transistor and method of forming the same: A high electron mobility transistor includes first, second and third compound semiconductor layers. The second compound semiconductor layer has a first interface with the first compound semiconductor layer. The third compound semiconductor layer is disposed over the first compound semiconductor layer. The third compound semiconductor layer has at least one... Agent: Sanken Electric Co., Ltd.

20110133248 - Vertical pmos field effect transistor and manufacturing method thereof: A PMOS field effect transistor includes a substrate, a first nitride layer, a mesa structure, two gate oxide films, a gate stack layer and a second nitride layer. The substrate has a oxide layer and a first doping area. The first nitride layer is located on the oxide layer. The... Agent: Inotera Memories, Inc.

20110133250 - Monolithic microwave integrated circuit device and method for forming the same: Provided are a monolithic microwave integrated circuit device and a method for forming the same. The method include: forming an HBT on a substrate; forming a wiring of the HBT and a bottom electrode of a capacitor on the substrate, with a first metal, the bottom electrode being spaced apart... Agent: Electronics And Telecommunications Research Institute

20110133251 - Gated algan/gan heterojunction schottky device: Some exemplary embodiments of a semiconductor device using a III-nitride heterojunction and a novel Schottky structure and related method resulting in such a semiconductor device, suitable for high voltage circuit designs, have been disclosed. One exemplary structure comprises a first layer comprising a first III-nitride material, a second layer comprising... Agent: International Rectifier Corporation

20110133252 - Semiconductor device with interface circuit and method of configuring semiconductor devices: Methods and devices yielding an improved semiconductor device with interface circuit are disclosed. Configuring a semiconductor with parallel device features reduces process variation (e.g., lithographically-induced process variation or other defects). Embodiments of the present invention provide semiconductor devices with I/O cell device features (e.g., I/O gates or core gates) laid... Agent: Kabushiki Kaisha Toshiba

20110133253 - Semiconductor device: A layout of a semiconductor device is capable of reliably reducing a variation in gate length due to the optical proximity effect, and enables flexible layout design to be implemented. Gate patterns (G1, G2, G3) of a cell (C1) are arranged at the same pitch, and terminal ends (e1, e2,... Agent: Panasonic Corporation

20110133254 - Crosstalk reduction in electrical interconnects using differential signaling: An electrical device includes a plurality of interconnects passing through a plane. The interconnects have a longitudinal axis substantially perpendicular to the plane and including an arrangement pattern which reduces or eliminates cross-talk between nearest neighboring interconnects, wherein the interconnects include a first differentially driven signal conductor pair and at... Agent:

20110133255 - Apparatus and method for molecule detection using nanopores: A detector device: a source region (S), a drain region (D) and a gate contact (100) on a substrate (104), with a channel region between the source and drain regions (S, D), an insulator layer over the substrate, comprising vias (140, 142, 144) filled with conductor material, wherein the vias... Agent: Nxp B.v.

20110133256 - Cmos-mems cantilever structure: The present invention discloses a CMOS-MEMS cantilever structure. The CMOS-MEMS cantilever structure includes a substrate, a circuit structure, and a cantilever beam. The substrate has a circuit area and a sensor unit area defined thereon. The circuit structure is formed in the circuit area. The cantilever beam is disposed in... Agent: National Chip Implementation Center National Applied Research Laboratories

20110133257 - Transferred thin film transistor and method for manufacturing the same: Provided are a transferred thin film transistor and a method of manufacturing the same. The method includes: forming a source region and a drain region that extend in a first direction in a first substrate and a channel region between the source region and the drain region; forming trenches that... Agent: Electronics And Telecommunications Research Institute

20110133258 - Shielded gate trench mosfet with increased source-metal contact: A semiconductor device formed on a semiconductor substrate having a substrate top surface, includes: a gate trench extending from the substrate top surface into the semiconductor substrate; a gate electrode in the gate trench; a dielectric material disposed over the gate electrode; a body region adjacent to the gate trench;... Agent: Alpha And Omega Semiconductor Incorporated

20110133259 - Stressed barrier plug slot contact structure for transistor performance enhancement: A method for forming a slot contact structure for transistor performance enhancement. A contact opening is formed to expose a contact region, and a slot contact is disposed within the contact opening in order to induce a stress on an adjacent channel region. In an embodiment, a stress inducing barrier... Agent:

20110133260 - Method and device to reduce dark current in image sensors: A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel area and a logic area, forming a light sensing element in the pixel area, and forming a first transistor in the pixel area and a second transistor in the logic area. The step of forming... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110133262 - Power semiconductor component with plate capacitor structure and edge termination: A semiconductor component includes a body with a drift zone, a source zone, a body zone, and a drain zone. A gate forms a MOS structure with the drift zone, with the source zone and with the body zone. An edge termination between the lateral edge and the MOS structure... Agent: Infineon Technologies Ag

20110133261 - Semiconductor device and method of manufacturing the same: A semiconductor device includes an active region defined by an isolation region formed in a cell area, buried gates disposed in the active region and the isolation region, conduction layers disposed on the active region and having the same heights as an surface of the isolation region, and a line... Agent: Hynix Semiconductor Inc.

20110133263 - Semiconductor device having reduced sub-threshold leakage: A semiconductor device fabricated in the semiconductor substrate includes a FinFET transistor having opposed source and drain pillars, and a fin interposed between the source and drain pillars. A cavity is formed in the semiconductor substrate extending at least partially between the fin and the semiconductor substrate. The cavity may... Agent: Micron Technology, Inc.

20110133265 - Memory cell: A memory cell has a tunnel dielectric over a first silicon-containing material, a second silicon-containing material over the tunnel dielectric, a first silicon oxide layer on an edge of the second silicon-containing material and extending across a first portion of an edge of the tunnel dielectric, and a second silicon... Agent: Micron Technology, Inc.

20110133264 - System and method for eeprom architecture: A method for manufacturing an Electrically Erasable Programmable Read-Only Memory (EEPROM) device includes providing a substrate and forming a gate oxide over the substrate. Also, the method includes providing a mask overlying the gate oxide layer, the mask defining a tunnel opening. The method additionally includes performing selective etching over... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20110133266 - Flash memory having a floating gate in the shape of a curved section: The floating gate of a flash memory may be formed with a flat lower surface facing a substrate and a curved upper surface facing the control gate. In some embodiments, such a device has improved capacitive coupling to the control gate and reduced capacitive coupling to its neighbors.... Agent:

20110133267 - Method of fabricating semiconductor device and the semiconductor device: A method of fabricating a semiconductor device includes forming a gate insulating film on a semiconductor substrate, forming a charge accumulation layer, an intermediate insulating film and a conductive layer sequentially on the gate insulating film, forming an electrode isolating trench in the conductive layer, the intermediate insulating film and... Agent: Kabushiki Kaisha Toshiba

20110133268 - Memory cells: Some embodiments include memory cells having vertically-stacked charge-trapping zones spaced from one another by dielectric material. The dielectric material may comprise high-k material. One or more of the charge-trapping zones may comprise metallic material. Such metallic material may be present as a plurality of discrete isolated islands, such as nanodots.... Agent: Micron Technology, Inc.

20110133269 - Semiconductor apparatus: A semiconductor apparatus includes, below a high-voltage wiring, a p− diffusion layer in contact with an n drain buffer layer and a p+ diffusion layer in contact with a p− diffusion layer for reducing the electric field strength in an insulator film, which the high-voltage wiring crosses over. Reducing electric... Agent: Fuji Electric Systems Co., Ltd.

20110133270 - Memory device with recessed construction between memory constructions: A recessed transistor construction is formed between a first access transistor construction and a second access transistor construction to provide isolation between the access transistor constructions of a memory device. In some embodiments, a gate of the recessed transistor construction is grounded. In an embodiment, the access transistor constructions are... Agent: Micron Technology, Inc.

20110133271 - Trench mos device with schottky diode and method for manufacturing same: In one embodiment the present invention includes a semiconductor device. The semiconductor device comprises a first semiconductor region, a second semiconductor region and a trench region. The first semiconductor region is of a first conductivity type and a first conductivity concentration. The trench region includes a metal layer in contact... Agent:

20110133272 - Semiconductor device with improved on-resistance: A semiconductor device includes a source, a drain, and a gate configured to selectively enable a current to pass between the source and the drain. The semiconductor device includes a drift zone between the source and the drain and a first field plate adjacent the drift zone. The semiconductor device... Agent: Infineon Technologies Austria Ag

20110133274 - Lateral double-diffused mosfet: A LDMOS transistor is implemented in a first impurity region on a substrate. The LDMOS transistor has a source that includes a second impurity region. The second impurity region is implanted into the surface of the substrate within the first impurity region. Additionally, the LDMOS transistor has a drain that... Agent: Volterra Semiconductor Corporation

20110133273 - Semiconductor device and manufacturing method thereof: A semiconductor device including a low-concentration impurity region formed on the drain side of an n-type MIS transistor, in a non-self-aligned manner with respect to an end portion of the gate electrode. A high-concentration impurity region is placed with a specific offset from the gate electrode and a sidewall insulating... Agent: Fujitsu Semiconductor Limited

20110133275 - Structure and method for semiconductor power devices: A semiconductor device includes a semiconductor-on-insulator region on a substrate. The semiconductor-on-insulator region includes a first semiconductor region overlying a dielectric region. The device includes an MOS transistor and a bipolar transistor. The MOS transistor has a drain region, a body region, and a source region in the first semiconductor... Agent:

20110133276 - Gate dielectric formation for high-voltage mos devices: An integrated circuit structure includes a semiconductor substrate and a high-voltage metal-oxide-semiconductor (HVMOS) device, which includes a first high-voltage well (HVW) region of a first conductivity type in the semiconductor substrate; a drain region of a second conductivity type opposite the first conductivity type in the semiconductor substrate and spaced... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110133277 - Semiconductor device: A semiconductor device includes a second conductive-type well configured over a substrate, a first conductive-type body region configured over the second conductive-type well, a gate electrode which overlaps a portion of the first conductive-type body region, and a first conductive-type channel extension region formed over the substrate and which overlaps... Agent:

20110133278 - Semiconductor device: A single crystal semiconductor layer of a first conduction type is disposed on a surface of a semiconductor substrate. A plurality of trenches are provided in the semiconductor layer to form a plurality of first semiconductor regions of the first conduction type at intervals in a direction parallel to the... Agent: Kabushiki Kaisha Toshiba

20110133279 - Semiconductor device: The semiconductor device includes: a first conductive-type first well and a second conductive-type second well configured over a substrate to contact each other; a second conductive-type anti-diffusion region configured in an interface where the first conductive-type first well contacts the second conductive-type second well over the substrate; and a gate... Agent:

20110133280 - Different thickness oxide silicon nanowire field effect transistors: A method (that produces a structure) patterns at least two wires of semiconductor material such that a first wire of the wires has a larger perimeter than a second wire of the wires. The method performs an oxidation process simultaneously on the wires to form a first gate oxide on... Agent: International Business Machines Corporation

20110133281 - Three-dimensional integrated circuits and techniques for fabrication thereof: Integrated circuits having complementary metal-oxide semiconductor (CMOS) and photonics circuitry and techniques for three-dimensional integration thereof are provided. In one aspect, a three-dimensional integrated circuit comprises a bottom device layer and a top device layer. The bottom device layer comprises a substrate; a digital CMOS circuitry layer adjacent to the... Agent: International Business Machines Corporation

20110133282 - Semiconductor device: A semiconductor device includes a power supply line supplied with a power supply voltage; a power supply node connected with the power supply line; a ground line; a ground pad connected with the ground line; a signal input pad; a main protection circuit section configured to discharge an ESD surge... Agent: Renesas Electronics Corporation

20110133286 - Integrierter schaltungsteil: An integrated circuit part containing at least one MOS transistor with a trace system, with a source region having a source contact, and with a drain region having a drain contact, and with a gate region having a gate contact, and with a first cover layer lying on the gate,... Agent:

20110133287 - Method for forming strained channel pmos devices and integrated circuits therefrom: An integrated circuit (IC) includes a plurality of compressively strained PMOS transistors. The IC includes a substrate having a semiconductor surface. A gate stack is formed in or on the semiconductor surface and includes a gate electrode on a gate dielectric, wherein a channel region is located in the semiconductor... Agent: Texas Instruments Incorporated

20110133284 - Multiple carbon nanotube transfer and its applications for making high-performance carbon nanotube field-effect transistor (cnfet), transparent electrodes, and three-dimensional integration of cnfets: A wafer-scale multiple carbon nanotube transfer process is provided. According to one embodiment of the invention, plasma exposure processes are performed at various stages of the fabrication process of a carbon nanotube device or article to improve feasibility and yield for successive transfers of nanotubes. In one such carbon nanotube... Agent:

20110133283 - Semiconductor device and method for forming the same: A semiconductor device includes a structure in which a difference in height between a cell region and a peripheral region are formed so that a buried gate structure of the cell region is substantially equal in height to the gate of the peripheral region, whereby a bit line and a... Agent: Hynix Semiconductor Inc.

20110133285 - Sram structure with finfets having multiple fins: A static random access memory (SRAM) cell includes a straight fin and a bended fin physically disconnected from the straight fin. The bended fin has a first portion and a second portion parallel to the straight fin. The distance between the first portion of the bended fin and the straight... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110133288 - Transistor of semiconductor device and method of fabricating the same: A method of fabricating a transistor of a semiconductor device comprises: forming a gate in a NMOS region and a PMOS region of a semiconductor substrate; forming a gate spacer on a sidewall of the gate; performing an ion implantation process on the NMOS region to form a junction region... Agent: Hynix Semiconductor Inc.

20110133289 - Multiple doping level bipolar junctions transistors and method for forming: A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for... Agent:

20110133290 - Semiconductor device and process for producing the same: A semiconductor device of high reliability and element-integrating performance, has a substrate (silicon substrate), a first trench made in the silicon substrate, a passive element layer buried in the first trench, and a first insulating film (silicon nitride film) arranged between the first trench and the passive element layer. The... Agent: Renesas Electronics Corporation

20110133291 - Semiconductor device and method of fabricating same: Disclosed is a fabrication method which includes: forming a first gate electrode and a second gate electrode which cross over an active region, the overall width of the second gate electrode being less than that of the first gate electrode; ion-implanting dopants into the active region at an oblique angle... Agent: Oki Semiconductor Co., Ltd.

20110133292 - Finfets with multiple fin heights: An integrated circuit structure includes a semiconductor substrate, and a FinFET over the semiconductor substrate. The FinFET includes a semiconductor fin; a gate dielectric on a top surface and sidewalls of the semiconductor fin; a gate electrode on the gate dielectric; and a source/drain region at an end of the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110133293 - Semiconductor device and semiconductor device manufacturing method: A semiconductor device including a semiconductor substrate having a logic formation region where a logic device is formed; a first impurity region formed in an upper surface of the semiconductor substrate in the logic formation region; a second impurity region formed in an upper surface of the semiconductor substrate in... Agent: Renesas Technology Corp.

20110133294 - Micro electromechanical systems (mems) having a gap stop and method therefor: A method of forming a micro-electromechanical system (MEMS) includes providing a cap substrate, providing a support substrate, depositing a conductive material over the support substrate, patterning the conductive material to form a gap stop and a contact, wherein the gap stop is separated form the contact by an opening, forming... Agent:

20110133295 - Region divided substrate and semiconductor device: A region divided substrate includes a substrate, a plurality of trenches, a conductive layer, and an insulating member. The substrate has a first surface and a second surface opposed to each other. The trenches penetrate the substrate from the first surface to the second surface and divide the substrate into... Agent: Denso Corporation

20110133297 - Semiconductor component and method for producing semiconductor components: A semiconductor is disclosed. In one embodiment, the semiconductor includes a semiconductor substrate having an active area region, a covering configured to protect the active area region, and a carrier. An interspace is located between the carrier and the covering. The interspace is filled with an underfiller material is disclosed.... Agent: Avago Technologies WirelessIP(singapore) Pte. Ltd.

20110133296 - Semiconductor device, and communication apparatus and electronic apparatus having the same: Provided is a package structure of a semiconductor device, capable of further reducing a planar size. The semiconductor device comprises a first package 2 embedding a first element 1, and a second package 4 stacked on and fixed to the first package while internally housing a second element 3. The... Agent: Yoshikawa Kogyo Co., Ltd.

20110133300 - Bottom electrode for mram device: A multi-layered bottom electrode for an MTJ device on a silicon nitride substrate is described. It comprises a bilayer of alpha tantalum on ruthenium which in turn lies on a nickel chrome layer over a second tantalum layer.... Agent: Magic Technologies, Inc.

20110133299 - Magnetic tunnel junction device: A system and method of manufacturing and using a magnetic tunnel junction device is disclosed. In a particular embodiment, a magnetic tunnel junction device includes a first free layer and second free layer. The magnetic tunnel junction also includes a spin torque enhancement layer. The magnetic tunnel junction device further... Agent: Qualcomm Incorporated

20110133298 - Spin-transfer switching magnetic element utilizing a composite free layer comprising a superparamagnetic layer: A system and method for forming a magnetic tunnel junction (MTJ) storage element utilizes a composite free layer structure. The MTJ element includes a stack comprising a pinned layer, a barrier layer, and a composite free layer. The composite free layer includes a first free layer, a superparamagnetic layer and... Agent: Qualcomm Incorporated

20110133301 - Wafer level optical imaging apparatus: A wafer level optical imaging apparatus includes a covering substrate that covers an imaging unit. A top shading layer is formed on a top surface of the covering substrate, and a bottom shading layer is formed on a bottom surface of the covering substrate.... Agent: Wisepal Technologies, Inc.

20110133302 - Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods: Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods are disclosed herein. One embodiment, for example, is directed to a method of processing a microelectronic workpiece including a semiconductor substrate having a plurality of microelectronic dies. The individual dies include integrated circuitry and a terminal... Agent: Micron Technology, Inc.

20110133303 - Mim/mis structure with praseodymium titanate or praseodymium oxide as insulator material: A semiconductor component including a first integrated circuit in a substrate which is adapted to produce electrical signals with a high-frequency signal component, wherein the substrate is such that the high-frequency signal component can propagate on a substrate surface and/or in the substrate interior, a second integrated circuit in the... Agent:

20110133304 - Structure and method for placement, sizing and shaping of dummy structures: A chip includes a number a plurality of functional areas of a layer and a number of dummy structures within the layer. The dummy structures are spaced from the functional areas. Each dummy structure has a size that is a function of the size and density of the functional areas.... Agent: Infineon Technologies Ag

20110133305 - Semiconductor chip for suppressing electromagnetic wave: A semiconductor chip includes: a semiconductor substrate having a plurality of electronic elements therein; a metal circuit pattern formed on the semiconductor substrate and allowing the plurality of electronic elements to be electrically connected to one another; and dummy metal patterns formed on the semiconductor substrate and the metal circuit... Agent: Electronics And Telecommunications Research Institute

20110133306 - Semiconductor devices and methods of forming the same: Provided are a semiconductor device and a method of forming the same. According to the method, a first buried oxide layer is locally formed in a semiconductor substrate and a core semiconductor pattern of a line form, a pair of anchor-semiconductor patterns and a support-semiconductor pattern are formed by patterning... Agent: Electronics And Telecommunications Research Institute

20110133307 - Damage propagation barrier: A conductor-filled damage propagation barrier is formed extending into a low-k dielectric layer between a fuse and an adjacent circuit element for preventing propagation of damage during a fuse blow operation. Conductor material filling the damage propagation barrier is formed from the same conductor layer as that used to form... Agent: International Business Machines Corporation

20110133309 - Semiconductor device and manufacturing method therefor: A first device where a number of first semiconductor chips and a second semiconductor chip for controlling communication between the first semiconductor chips and the outside or communication between the first semiconductor chips are stacked and a second device having at least one third semiconductor chip that communicates with the... Agent: Keio University

20110133308 - Semiconductor device with oxide define pattern: A semiconductor device includes a substrate; an inductor wiring pattern overlying the substrate, wherein the inductor wiring pattern is formed in an inductor-forming region; a plurality of shielding patterns between the inductor wiring pattern and the substrate within the inductor-forming region; and at least one first oxide define (OD) pattern... Agent:

20110133310 - integrated circuit and a method using integrated process steps to form deep trench isolation structures and deep trench capacitor structures for the integrated circuit: Disclosed is an integrated circuit having at least one deep trench isolation structure and a deep trench capacitor. A method of forming the integrated circuit incorporates a single etch process to simultaneously form first trench(s) and a second trenches for the deep trench isolation structure(s) and a deep trench capacitor,... Agent: International Business Machines Corporation

20110133311 - Semiconductor device and method of manufacturing semiconductor device: The semiconductor device includes a capacitor including a plurality of interconnection layers stacked over each other, the plurality of interconnection layers each including a plurality of electrode patterns extended in a first direction, a plurality of via parts provided between the plurality of interconnection layers and electrically interconnecting the plurality... Agent: Fujitsu Semiconductor Limited

20110133312 - Power device: The present invention is a power device includes, a first conductive type semiconductor substrate, a second conductive type base region formed on a surface of the semiconductor substrate, a second conductive type collector region formed on a rear surface of the semiconductor substrate, a first conductive type emitter region formed... Agent: Mitsubishi Electric Corporation

20110133313 - Hardmask materials: Hardmask films having high hardness and low stress are provided. In some embodiments a film has a stress of between about −600 MPa and 600 MPa and hardness of at least about 12 GPa. In some embodiments, a hardmask film is prepared by depositing multiple sub-layers of doped or undoped... Agent:

20110133314 - Method for producing a semiconductor wafer: A method for producing a semiconductor wafer includes pulling a single crystal of semiconductor material, slicing a semiconductor wafer from the single crystal and polishing the semiconductor wafer with the polishing pad and polishing agent. The polishing agent is free of solid materials having abrasive action and the polishing pad... Agent: Siltronic Ag

20110133316 - Integrated circuit package system for electromagnetic isolation and method for manufacturing thereof: A method for manufacturing an integrated circuit package system includes: providing a lead frame; forming an integrated circuit package including the lead frame; providing a selectively exposed area on the lead frame; and coating a conductive shielding layer on the integrated circuit package for coupling the selectively exposed area.... Agent:

20110133315 - System support for electronic components and method for production thereof: A chip (2, 3) is arranged above a top side of a flexible support (1) and mechanically decoupled from the support. Electrical connections (8, 11) of the chip are embodied using a planar connection technique. The chip can be separated from the support by an air gap or a base... Agent: Epcos Ag

20110133317 - Semiconductor device: A semiconductor device (1) includes a wiring (10) and dummy conductor patterns (20). The wiring (10) is a wiring through which a current with a frequency of 5 GHz or higher flows. Near the wiring (10), the dummy conductor patterns (20) are formed. A planar shape of each of the... Agent: Renesas Electronics Corporation

20110133318 - Sip substrate: Disclosed in this specification is a system-in-a-package substrate that includes an interconnect substrate for permitting finely pitched connections to be made to an integrated circuit. The interconnect substrate includes a central region on its upper surface for receiving the integrated circuit. The interconnect substrate also has interconnections that electrically connect... Agent: Fairchild Semiconductor Corporation

20110133319 - Auxiliary leadframe member for stabilizing the bond wire process: A semiconductor package comprises a die attach pad and an auxiliary support member at least partially circumscribing the die attach pad. A set of contact leads is formed extending outward from the die attach pad. A first set of contact pads is formed on the bottom surface of the distal... Agent: Utac Thai Limited

20110133320 - Semiconductor package and method of manufacturing the same: A semiconductor package includes a metal plate, a power element, a lead frame having a die pad, a resin sheet having insulation properties, a control circuit that controls the power element, and a mold resin. The power element is mounted on the die pad, and the die pad is mounted... Agent: Denso Corporation

20110133322 - Leadframe for leadless package, structure and manufacturing method using the same: A leadframe employed by a leadless package comprises a plurality of package units and an adhesive tape. Each of the package units has a die pad with a plurality of openings and a plurality of pins disposed in the plurality of openings. The adhesive tape is adhered to the surfaces... Agent: Chipmos Technologies Inc.

20110133321 - Semiconductor device and manufacturing method thereof: A disclosed semiconductor device includes a wiring board, a semiconductor element mounted on a principal surface of the wiring board with flip chip mounting, a first conductive pattern formed on the principal surface along at least an edge portion of the semiconductor element, a second conductive pattern formed on the... Agent: Fujitsu Semiconductor Limited

20110133323 - Semiconductor device with sealed semiconductor chip: A semiconductor device includes a semiconductor chip with bonding pads, the bonding pads being arranged along one side of an element forming surface of the semiconductor chip, a lead frame including first and second internal leads arranged such that tips thereof correspond to some of the bonding pads of the... Agent:

20110133325 - Integrated circuit packaging system with interconnect and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing a first substrate; mounting a component over the first substrate; mounting a stack substrate over the component, the stack substrate having an inner pad and an outer pad connected to the first substrate; mounting a first exposed interconnect... Agent:

20110133324 - Multi-chip stacked package and its mother chip to save interposer: A multi-chip stacked package and its mother chip to save an interposer are revealed. The mother chip is a two-layer structure consisting of a semiconductor layer and an organic layer where a redistribution layer is embedded into the organic layer with a plurality of first terminals and a plurality of... Agent: Powertech Technology Inc.

20110133326 - Reducing plating stub reflections in a chip package using resistive coupling: Improving signal quality in a high-frequency chip package by resistively connecting an open-ended plating stub to ground. One embodiment provides a multi-layer substrate for interfacing a chip with a printed circuit board. A conductive first layer provides a chip mounting location. A signal interconnect is spaced from the chip mounting... Agent: International Business Machines Corporation

20110133327 - Semiconductor package of metal post solder-chip connection: A semiconductor package with MPS-C2 configuration is revealed, primarily comprising a substrate and a chip. A plurality of leads covered by a solder mask having a rectangular slot disposed on the top surface of the substrate to expose parts of the leads. A plurality of metal pillars are disposed on... Agent:

20110133328 - Semiconductor device having heat radiating configuration: A semiconductor device and a method of manufacturing the same are disclosed. The semiconductor device includes: a casing, a board and a semiconductor chip. The chip includes: an element part; a heat sink bonded to the element part; an insulting layer located on the heat sink so that the heat... Agent: Denso Corporation

20110133329 - Semiconductor device and method of manufacturing the same: The semiconductor device has a wiring substrate, a heat-releasing plate having a convex part inserted into a through-hole of the wiring substrate, a semiconductor chip mounted over the convex part of the heat-releasing plate, and a bonding wire coupling an electrode pad of the semiconductor chip with a bonding lead... Agent: Renesas Electronics Corporation

20110133330 - Low temperature curing compositions: The present invention relates to thermosetting resin compositions that include maleimide-, nadimide- or itaconimide-containing compounds and a metal/carboxylate complex and a peroxide, which is curable at a low temperature at relative short period of time, such as less than about 100° C., for instance 55-70° C., over a period of... Agent: Henkel Corporation

20110133331 - Interface structure for copper-copper peeling integrity: An integrated circuit device is disclosed. An exemplary integrated circuit device includes a first copper layer, a second copper layer, and an interface between the first and second copper layers. The interface includes a flat zone interface region and an intergrowth interface region, wherein the flat zone interface region is... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110133333 - Microelectronic devices including conductive vias, conductive caps and variable thickness insulating layers, and methods of fabricating same: Microelectronic devices include a conductive via that extends into a substrate face and that also protrudes beyond the substrate face to define a conductive via end surface and a conductive via sidewall that extends from the end surface towards the substrate face. A conductive cap is provided on the end... Agent: Samsung Electronics Co., Ltd.

20110133332 - Package substrate and method of fabricating the same: There is provided a package substrate allowing for enhanced reliability by improving the structure of a solder bump and a method of fabricating the same. The package substrate includes: a substrate having at least one conductive pad; an insulating layer provided on the substrate and having an opening to expose... Agent: Samsung Electro-mechanics Co., Ltd.

20110133334 - Semiconductor device and method of confining conductive bump material with solder mask patch: A semiconductor device has a semiconductor die having a plurality of die bump pad and substrate having a plurality of conductive trace with an interconnect site. A solder mask patch is formed interstitially between the die bump pads or interconnect sites. A conductive bump material is deposited on the interconnect... Agent: Stats Chippac, Ltd.

20110133336 - Semiconductor wafer and method of manufacturing the same and method of manufacturing semiconductor device: A semiconductor wafer comprising: a tubular trench formed at a position to form a through-hole electrode of a wafer; an insulating member buried inside the trench and on an upper surface of the trench; a gate electrode film and a metal film formed on an upper surface of the insulating... Agent: Renesas Electronics Corporation

20110133335 - Through-silicon via with air gap: A semiconductor substrate having a through-silicon via with an air gap interposed between the through-silicon via and the semiconductor substrate is provided. An opening is formed partially through the semiconductor substrate. The opening is first lined with a liner and then the opening is filled with a conductive material. A... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110133337 - Area reduction for surface mount package chips: Using side-wall conductor leads deposited on the side-walls of a base substrate to form package level conductor leads for active circuits manufactured on silicon substrate(s) stacked on the base substrate, the preferred embodiments of the present invention significantly reduces the areas of surface mount package chips. Besides area reduction, these... Agent:

20110133338 - Conductor bump method and apparatus: Various semiconductor die conductor structures and methods of fabricating the same are provided. In one aspect, a method of manufacturing is provided that includes forming a conductor structure on a conductor pad of a semiconductor die. The conductor layer has a surface. A polymeric layer is formed on the surface... Agent:

20110133340 - Package substrate and semiconductor apparatus: A package substrate includes: a plurality of electrodes configured to be electrically connected to a semiconductor chip; a plurality of wiring layers configured to be stacked; and a plurality of vias configured to electrically connect a plurality of planes formed in the plurality of wiring layers. A power supply via... Agent: Renesas Electronics Corporation

20110133341 - Semiconductor package and method of manufacturing the same: There is provided a method of manufacturing a semiconductor package. The method includes: (a) providing a semiconductor chip having a first surface and a second surface opposite to the first surface, wherein a pad is formed on the first surface; (b) disposing the semiconductor chip on a supporting substrate such... Agent: Shinko Electric Industries Co., Ltd.

20110133339 - Semiconductor structure and method for making the same: The present invention relates to a semiconductor structure and a method for making the same. The method includes the following steps: (a) providing a first wafer and a second wafer; (b) disposing the first wafer on the second wafer; (c) removing part of the first wafer, so as to form... Agent:

20110133343 - Semiconductor device: Provided is a semiconductor device including: a semiconductor substrate having a through hole formed towards one surface side from the other surface side; an electrode pad arranged on the one surface side of the semiconductor substrate and partially exposed to the through hole; and a through electrode arranged at an... Agent: Fujikura Ltd.

20110133342 - Wiring board, manufacturing method of the wiring board, and semiconductor package: A wiring board includes a ceramic substrate including a plurality of stacked ceramic layers, an internal wiring, and an electrode, the internal wiring being electrically connected to the electrode, the electrode being exposed from a first surface of the ceramic substrate; and a silicon substrate including a wiring layer, the... Agent: Shinko Electric Industries Co., Ltd.

20110133344 - Curable resin compositions useful as underfill sealants for use with low-k dielectric-containing semiconductor devices: This invention relates to thermosetting resin compositions useful for flip chip (“FC”) underfill sealant materials, where a semiconductor chip is mounted directly onto a circuit through solder electrical interconnections. Similarly, the compositions are useful for mounting onto a circuit board semiconductor devices, such as chip size or chip scale packages... Agent: Henkel Corporation

20110133346 - Adhesive for connection of circuit member and semiconductor device using the same: An adhesive for connecting circuit members, which is interposed between a semiconductor chip having protruding connecting terminals and a board having wiring patterns formed thereon for electrically connecting the connecting terminals and the wiring patterns facing each other and bonding the semiconductor chip and the board by applying pressure/heat, containing... Agent: Hitachi Chemical Company, Ltd.

20110133345 - Manufacturing method for electronic device: There is provided an electronic device manufacturing method capable of manufacturing a device having a preferable communication characteristic at a low cost with a high productivity. The manufacturing method is for manufacturing an electronic device including a plurality of IC chips 100, each having external electrodes formed on a pair... Agent:

20110133347 - Method and apparatus of providing overlay: Provided is an apparatus that includes an overlay mark. The overlay mark includes a first portion that includes a plurality of first features. Each of the first features have a first dimension measured in a first direction and a second dimension measured in a second direction that is approximately perpendicular... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110127483 - Resistance change memory and manufacturing method thereof: According to one embodiment, a resistance-change memory of embodiment includes a first interconnect line extending in a first direction, a second interconnect line extending in a second direction intersecting with the first direction, and a cell unit. The cell unit is provided at an intersection of the first interconnect line... Agent:

20110127484 - Resistance change memory and manufacturing method thereof: According to one embodiment, a resistance change memory includes a first interconnect extending in a first direction, a second interconnect extending in a second direction intersecting with the first direction, and a cell unit which is provided between the first interconnect and the second interconnect. The cell unit includes a... Agent:

20110127485 - Keyhole-free sloped heater for phase change memory: Subject matter disclosed herein relates to a method of manufacturing a semiconductor integrated circuit device, and more particularly to a method of fabricating a phase change memory device.... Agent:

20110127486 - Phase-change memory device, phase-change channel transistor and memory cell array: A phase-change channel transistor includes a first electrode; a second electrode; a memory layer provided between the first and second electrodes; and a third electrode provided for the memory layer with an insulating film interposed therebetween, wherein the memory layer includes at least a first layer formed from a phase-change... Agent: Semiconductor Technology Academic Research Center

20110127487 - Electronic device for a reconfigurable logic circuit: The invention relates to an electronic device, comprising a field effect transistor and a resistive switch electrically coupled with each other, wherein the resistive switch is configured to be switched between a state of low resistance and a state of high resistance.... Agent: Sony Corporation

20110127488 - Uses of a carbon nanobud molecule and devices comprising the same: A carbon nanobud molecule (3, 9, 18, 23, 29, 36) having at least one fullerene part covalently bonded to the side of a tubular carbon molecule is used to interact with electromagnetic radiation in a device, wherein the interaction with electromagnetic radiation occurs through relaxation and/or excitation of the carbon... Agent: Canatu Oy

20110127489 - Light emitting device and method of manufacturing the same: Example embodiments relate to a light emitting device and a method of fabricating the light emitting device. The light emitting device may include an n-type clad layer including a plurality of nitride semiconductor layers, at least one interlayer disposed between the plurality of nitride semiconductor layers, a via hole in... Agent: Samsung Electronics Co., Ltd.

20110127491 - Light emitting device, method of manufacturing the same, light emitting device package, and lighting system: Disclosed is a light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system. The light emitting device may include a first conductive semiconductor layer including first conductive impurities, a second conductive semiconductor layer including second conductive impurities different from the first conductive... Agent: Lg Innotek Co., Ltd.

20110127490 - Method of growing uniform semiconductor nanowires without foreign metal catalyst and devices thereof: Amongst the candidates for very high efficiency solid state lights sources and full solar spectrum solar cells are devices based upon InGaN nanowires. Additionally these nanowires typically require heterostructures, quantum dots, etc which all place requirements for these structures to be grown with relatively few defects. Further manufacturing requirements demand... Agent: The Royal Institution For The Advancement Of Learning / Mcgill University

20110127492 - Field effect transistor having nanostructure channel: A field effect transistor (FET) includes a drain formed of a first material, a source formed of the first material, a channel formed by a nanostructure coupling the source to the drain, and a gate formed between the source and the drain and surrounding the nanostructure.... Agent: International Business Machines Corporation

20110127493 - Self aligned carbide source/drain fet: A field effect transistor includes a metal carbide source portion, a metal carbide drain portion, an insulating carbon portion separating the metal carbide source portion from the metal carbide portion, a nanostructure formed over the insulating and carbon portion and connecting the metal carbide source portion to the metal carbide... Agent: International Business Machines Corporation

20110127503 - Composition for organic electroluminescence element, organic thin film, organic electroluminescence element, organic el display device and organic el lighting: (wherein the EL material S is an organic electroluminescence element material having a smallest weight in the composition, the EL material N is an organic electroluminescence element material having a largest weight in the composition, the weight ratio is the weight ratio between the EL material S and the EL... Agent: Mitsubishi Chemical Corporation

20110127517 - Compound containing 1,3-diene structure and method for producing same: Disclosed is a compound containing a divalent group represented by formula (I). (In formula (I), Ar1 represents an arylene group, a divalent heterocyclic group or a divalent aromatic amine group; J1 represents a phenylene group; J2 represents an alkylene group; X represents an oxygen atom or a sulfur atom; j... Agent: Sumitomo Chemical Company, Limited

20110127512 - Copolymer and polymer light emitting device using the same: s

20110127514 - Display device and method for manufacturing display device: A display device comprises: a metal substrate (301) having semiconductor elements (21, 22) and organic EL elements (24) provided thereon and connected to a power source; an interlayer insulating film (3) disposed between the metal substrate and the semiconductor elements (21, 22) and between the metal substrate and the organic... Agent: Sumitomo Chemical Company, Limited

20110127510 - Light-emitting element, light-emitting device, electronic device, and lighting device: Objects of the present invention are to provide: a light-emitting element having a long lifetime and good emission efficiency and drive voltage. One embodiment of the invention is a light-emitting element including, between an anode and a cathode, at least a stack structure in which a first layer, a second... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110127502 - Method of manufacturing organic light emitting display apparatus and organic light emitting display apparatus: A method of manufacturing an organic light emitting display apparatus includes forming first electrodes on a substrate, forming a pixel defining layer (PDL) on the substrate and first electrodes, the PDL including openings exposing predetermined areas of the first electrodes, forming a charge transport layer on the PDL and inside... Agent:

20110127507 - Method of manufacturing organic light emitting display apparatus, surface treatment device for organic light emitting display apparatus, and organic light emitting display apparatus: Provided are a method of manufacturing an organic light emitting display apparatus, a surface treatment device for an organic light emitting display apparatus, and an organic light emitting display apparatus. To easily form organic emissive layers, the method includes: forming a first electrode on a substrate; forming on the first... Agent: Samsung Mobile Display Co., Ltd.

20110127496 - Neutral metallic dendrimer complexes: in which CORE represents a group of formula MXXYZ, in which M represents a metal cation, x represents an integer of 1 or more, each X which may be the same or different represents a mono-, bi- or tri-dentate coordinating group, z represents 0 or an integer of 1 or... Agent:

20110127495 - New compound and organic light emitting device using the same: The present invention provides a novel compound that is capable of largely improving life span, efficiency, electrochemical stability and thermal stability of the organic light emitting device, and an organic light emitting device in which said compound is included in an organic compound layer.... Agent:

20110127513 - Novel nitrogen-containing heterocyclic compound and organic electronic device using the same: The present invention provides a novel nitrogen-containing heterocyclic derivative and an organic electronic device using the same. The organic electronic device according to the present invention has excellent properties in terms of efficiency, driving voltage, and a life span.... Agent: Lg Chem, Ltd.

20110127500 - Oled display apparatus and method of manufacturing the same: An organic light-emitting diode (OLED) display apparatus and a method of manufacturing the OLED display apparatus, the apparatus includes anode electrodes having different thicknesses for different types of sub-pixels.... Agent: Samsung Mobile Display Co., Ltd.

20110127506 - Oled display architecture with improved aperture ratio: A device such as a display region that includes a plurality of multi-color pixels is provided. Each pixel may have several types of organic light emitting devices that operate as sub-pixels, and at least one type of device may be shared by multiple pixels. Less-used and/or more efficient device types,... Agent: Universal Display Corporation

20110127494 - Optoelectronic device having a sandwich structure and method for forming the same: An optoelectronic device is formed having a sandwich structure, which consists of an inorganic semiconductor layer, an organic semiconductor layer, and another inorganic semiconductor layer, where both of the two inorganic semiconductor layers are produced by a solution process.... Agent: National Taiwan University

20110127505 - Organic electroluminescence device and display unit: An organic electroluminescence device having high light emitting efficiency and improved reliability is provided. The organic electroluminescence device includes: an anode containing at least aluminum (Al); a cathode; and an organic layer between the anode and the cathode, the organic layer including a light emitting layer. The organic layer has... Agent: Sony Corporation

20110127508 - Organic electronic device and method of manufacture: An organic electronic device (e.g. OLED, OPV, OES, OTFT) is disclosed. The organic electronic device includes a carrier substrate, a first electrode layer disposed on the carrier substrate, an organic active electronic region disposed on the first electrode layer, and an indium second electrode layer disposed and formed on the... Agent:

20110127509 - Organic light emitting device: An organic light emitting device (OLED) includes a polymeric fluorescent light emitting material doped with a phosphorescent dopant to form a fluorescent light emitting layer. The fluorescent light emitting layer may inhibit or prevent device degradation without affecting light emission from the light emitting layer, and may improve the service... Agent: Samsung Electronics Co., Ltd

20110127497 - Organic light emitting device using graphene: An organic light emitting device including graphene. The organic light emitting device includes a first electrode that is interposed between a transparent substrate and an organic layer emitting light, and includes graphene having a thickness of about 0.1 nanometer (nm) to about 10 nanometers (nm).... Agent: Samsung Electronics Co., Ltd.

20110127498 - Organic light emitting diode display device: An organic light emitting diode (OLED) display device includes a first substrate; a first electrode positioned on the first substrate; an organic light emission layer positioned on the first electrode; a second electrode positioned on the organic light emission layer; and a capping layer positioned on the second electrode to... Agent: Samsung Mobile Display Co., Ltd.

20110127499 - Organic light emitting diode display device and method of fabricating the same: An organic light emitting diode (OLED) display device and a method of fabricating the OLED display device, the OLED display device includes a substrate including an emission region and a non-emission region, a black matrix disposed in a region excluding a part of the emission region, a buffer layer disposed... Agent: Samsung Mobile Display Co., Ltd.

20110127501 - Organic light-emitting diode lminaires:

20110127504 - Organic thin film transistors: An organic thin film transistor comprising: a substrate; a source electrode and a drain electrode disposed over the substrate with a channel region therebetween; a layer of organic semiconductor disposed in the channel region; a gate electrode; and a gate dielectric disposed between the layer of organic semiconductor and the... Agent: Panasonic Corporation

20110127515 - Photoelectric conversion element: wherein R1, R2, R3, R4, R5 and R6 are the same or different, represent a hydrogen atom or a substituent, and may be linked with one another to form a cyclic structure; X1, X2 and X3 are the same or different and represent a sulfur atom, an oxygen atom, a... Agent: Sumitomo Chemical Company, Limited

20110127516 - Polymer compound and light-emitting element using same: A polymer compound including: the repeating unit shown in the following formula (I) (wherein: Ar1 represents an arylene group, a divalent heterocyclic group, or a divalent aromatic amine; J1 and J2 each represent a direct bond, an alkylene group, or a phenylene group, and X1 represents an oxygen atom or... Agent: Sumitomo Chemical Company ,limited

20110127511 - Top-emitting organic light-emitting device: A top-emitting organic light-emitting device (OLED) including a reflective first electrode layer; a semitransparent second electrode layer facing the first electrode layer; and an organic layer between the first electrode layer and the second electrode layer, wherein the organic layer comprises a first layer, a second layer, and an emission... Agent:

20110127528 - Method for manufacturing semiconductor device and semiconductor device: In a method for manufacturing a semiconductor device comprising an n-type transistor (Q1) that has a source electrode (4ns), a drain electrode (4d), an oxide semiconductor film (5), and a gate electrode (2), and that is formed on a substrate (1), and a p-type transistor (Q2) that has a source... Agent: Sumitomo Chemical Company, Limited

20110127527 - Neutron detector with gamma ray isolation: A silicon-on-insulator (SOI) neutron detector comprising a silicon-on-insulator structure, wherein the silicon-on-insulator structure consists of an active semiconductor layer, a buried layer, and a handle substrate, a lateral carrier transport and collection detector structure within the active semiconductor layer of the silicon-on-insulator structure, and a neutron to high energy particle... Agent: The Government Of The United States Of America, As Represented By The Secretary Of The Navy

20110127526 - Non-linear element, display device including non-linear element, and electronic device including display device: A non-linear element (such as a diode) which includes an oxide semiconductor and has a favorable rectification property is provided. In a transistor including an oxide semiconductor in which the hydrogen concentration is 5×1019/cm3 or lower, a work function φms of a source electrode in contact with the oxide semiconductor,... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110127519 - Organic light emitting display device and method of manufacturing the same: An organic light emitting display device and a method for manufacturing the same. The organic light emitting display device includes: an insulating layer formed on a substrate; a resistance layer of oxide semiconductor formed on the insulating layer; a wiring layer connected to both side portions of the resistance layer;... Agent: Samsung Mobile Display Co., Ltd.

20110127520 - Organic light emitting display device and method of manufacturing the same: A thin film transistor TFT, including a substrate, a gate electrode on the substrate, a gate insulating layer on the gate electrode, an active layer on the gate insulating layer, the active layer corresponding to the gate electrode and including a channel region, source and drain electrodes contacting the active... Agent:

20110127525 - Semiconductor device: An intrinsic or substantially intrinsic semiconductor, which has been subjected to a step of dehydration or dehydrogenation and a step of adding oxygen so that the carrier concentration is less than 1×1012/cm3 is used for an oxide semiconductor layer of an insulated gate transistor, in which a channel region is... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110127523 - Semiconductor device and manufacturing method thereof: An embodiment is a semiconductor device which includes a first oxide semiconductor layer over a substrate having an insulating surface and including a crystalline region formed by growth from a surface of the first oxide semiconductor layer toward an inside; a second oxide semiconductor layer over the first oxide semiconductor... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110127522 - Semiconductor device and method for manufacturing the same: Objects are to provide a semiconductor device for high power application in which a novel semiconductor material having high productivity is used and to provide a semiconductor device having a novel structure in which a novel semiconductor material is used. The present invention is a vertical transistor and a vertical... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110127524 - Semiconductor device and method for manufacturing the same: Disclosed is a semiconductor device comprising a thin film transistor and wirings connected to the thin film transistor, in which the thin film transistor has a channel formation region in an oxide semiconductor layer, and a copper metal is used for at least one of a gate electrode, a source... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110127521 - Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device: One embodiment is a method for manufacturing a stacked oxide material, including the steps of forming an oxide component over a base component; forming a first oxide crystal component which grows from a surface toward an inside of the oxide component by heat treatment, and leaving an amorphous component just... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110127518 - Transistor, method of manufacturing the transistor and electronic device including the transistor: Provided are a transistor, a method of manufacturing the transistor, and an electronic device including the transistor. The transistor may include a passivation layer on a channel layer, a source, a drain, and a gate, wherein the component of the passivation layer is varied in a height direction. The passivation... Agent: Samsung Electronics Co., Ltd.

20110127529 - Silicon-on-insulator (soi) structure configured for reduced harmonics and method of forming the structure: Disclosed is semiconductor structure with an insulator layer on a semiconductor substrate and a device layer is on the insulator layer. The substrate is doped with a relatively low dose of a dopant having a given conductivity type such that it has a relatively high resistivity. Additionally, a portion of... Agent: International Business Machines Corporation

20110127530 - Semiconductor integrated circuit device: A method of fabricating a semiconductor integrated circuit includes forming a first dielectric layer on a semiconductor substrate, patterning the first dielectric layer to form a first patterned dielectric layer, forming a non-single crystal seed layer on the first patterned dielectric layer, removing a portion of the seed layer to... Agent: Samsung Electronics Co., Ltd.

20110127536 - Active matrix substrate, display device, method for inspecting the active matrix substrate, and method for inspecting the display device: An active matrix substrate (2) is provided with first connecting wirings (641, 643, 645, 647) connected to gate terminals (51) to which extraction wirings (611, 613, 615, 617) are connected, second connecting wirings (642, 644, 646) connected to gate terminals (51) to which extraction wirings (612, 614, 616) are connected,... Agent:

20110127532 - Array substrate for liquid crystal display device and method of fabricating the same: An array substrate for a liquid crystal display device includes a gate line on a substrate; a gate electrode connected to the gate line; a gate insulating layer on the gate line and the gate electrode and including a gate opening; an active layer on the gate insulating layer and... Agent:

20110127535 - Display device and manufacturing method therefor: An active matrix substrate of a display device of the present invention includes a glass substrate (30), a plurality of connection terminals (41) formed on the surface of the glass substrate and arranged in parallel with one another at an equal interval, and an interlayer insulating film (38) covering the... Agent: Sharp Kabushiki Kaisha

20110127537 - Display device and method for manufacturing display device: A display device comprises: a wiring layer (2) connected to a power source and formed between a substrate (1) and semiconductor elements (21, 22) and between the substrate (1) and an organic EL element (24) such that a region in which the organic EL element (24) is disposed is within... Agent: Sumitomo Chemical Company, Limited

20110127531 - Display device, tft substrate, and method of fabricating the tft substrate: Provided are a display device, a thin-film transistor (TFT) substrate, and a method of fabricating the TFT substrate. The method includes: forming a gate electrode on a pixel region of a substrate; forming a gate insulating film on the gate electrode; forming a semiconductor layer on the gate insulating film... Agent:

20110127534 - Esd induced artifact reduction design for a thin film transistor image sensor array: A method is provided for fabricating an image sensor array in a manner that reduces the potential for defects resulting from electrostatic discharge events during fabrication of the image sensor array. The method includes: forming at least one pixel over a substrate, the pixel including a switching transistor and a... Agent:

20110127533 - Organic light-emitting display device and method of manufacturing the same: An organic light-emitting display device which may be configured to prevent oxygen or water from penetrating from the outside and which may be more easily mass produced is disclosed. A method of manufacturing an organic light-emitting display device is also disclosed. The organic light-emitting display device may include, for example,... Agent: Samsung Mobile Display Co., Ltd.

20110127538 - Organic light emitting diode display device: An organic light emitting diode (OLED) display device, including a first substrate and a second substrate facing each other, a sealant arranged between the first and second substrates to adhere the first and second substrates together, a plurality of interconnections arranged on one of the first and second substrates and... Agent:

20110127539 - Nitride semiconductor light-emitting device: A nitride semiconductor light-emitting device includes an n type nitride semiconductor layer, a light-emitting layer formed on the n type nitride semiconductor layer, a first p type nitride semiconductor layer formed on the light-emitting layer, an intermediate layer formed on the first p type nitride semiconductor layer to alternately cover... Agent: Sharp Kabushiki Kaisha

20110127540 - Semiconductor device: A semiconductor device includes a substrate on which a GaN channel layer, an AlGaN electron supply layer and a GaN cap layer are stacked in this order, a gate electrode formed on the GaN cap layer, and a source electrode and a drain electrode formed on the AlGaN electron supply... Agent: Sumitomo Electric Industries, Ltd.

20110127541 - Semiconductor heterostructure diodes: Planar Schottky diodes for which the semiconductor material includes a heterojunction which induces a 2DEG in at least one of the semiconductor layers. A metal anode contact is on top of the upper semiconductor layer and forms a Schottky contact with that layer. A metal cathode contact is connected to... Agent: Transphorm Inc.

20110127545 - Compound semiconductor device with t-shaped gate electrode: A compound semiconductor device includes a compound semiconductor substrate; epitaxially grown layers formed over the compound semiconductor substrate and including a channel layer and a resistance lowering cap layer above the channel layer; source and drain electrodes in ohmic contact with the channel layer; recess formed by removing the cap... Agent: Fujitsu Limited

20110127544 - Group iii nitride templates and related heterostructures, devices, and methods for making them: A templated substate includes a base layer, and a template layer disposed on the base layer and having a composition including a single-crystal Group Ill nitride. The template layer includes a continuous sublayer on the base layer and a nanocolumnar sublayer on the first sublayer, wherein the nanocolumnar sublayer includes... Agent: Kyma Technologies

20110127543 - Semiconductor device: A semiconductor device includes a substrate, a semiconductor element disposed on the main surface of the substrate and generating a heat of 200° C. or more, an enclosure surrounding the semiconductor element, and a liquid sealant containing a heat-resistant oil. The enclosure controls the flow of the sealant and seals... Agent: Kabushiki Kaisha Yaskawa Denki

20110127542 - Semiconductor device and method of fabricating the same: According to one embodiment, a semiconductor device contains a gate electrode, SiGe layers, Si layers, source/drain regions, and silicide layers. The gate electrode is formed on a semiconductor substrate via a gate insulating film. The SiGe layers are formed on both sides of the gate electrode on the semiconductor substrate.... Agent: Kabushiki Kaisha Toshiba

20110127546 - Reflective secondary lens system and semiconductor assembly and also method for the production thereof: The present invention relates to a reflective and/or refractive secondary lens system for focusing sunlight onto semiconductor elements, the secondary lens system being characterised according to the invention by a projection which is disposed around the basic body forming the secondary lens system. Furthermore, the present invention relates to a... Agent: Fraunhofer-gesellschaft Zur Foerderling Derangewan Forschung E.v.

20110127547 - Cavity-enhanced multispectral photonic devices: A multispectral pixel structure is provided that includes a plurality of stacked cavity arrangements for emitting or detecting a plurality of specified wavelengths, wherein each stacked cavity arrangement having a photoactive layer for spectral emission or detection of one of the specified wavelengths. The photoactive layer is positioned within a... Agent:

20110127549 - Light emitting diode chip having distributed bragg reflector and method of fabricating the same: Exemplary embodiments of the present invention disclose a light emitting diode chip including a substrate having a first surface and a second surface, a light emitting structure arranged on the first surface of the substrate and including an active layer arranged between a first conductive-type semiconductor layer and a second... Agent: Seoul Opto Device Co., Ltd.

20110127548 - Organic light emitting diode display device: An organic light emitting diode (OLED) display device, including: a base substrate, on which OLEDs are formed; and an encapsulation substrate disposed on the base substrate, to cover the OLEDs; and a bonding member connecting the base substrate and the encapsulating substrate. The base substrate and/or the encapsulation substrate include... Agent: Samsung Mobile Display Co., Ltd.

20110127550 - Light emitting device and light emitting device package: Provided is a light emitting device, which includes a second conductive type semiconductor layer, an active layer, a first conductive type semiconductor layer, and a intermediate refraction layer. The active layer is disposed on the second conductive type semiconductor layer. The first conductive type semiconductor layer is disposed on the... Agent:

20110127553 - Led unit: An LED (light emitting diode) unit includes an LED and a lens mounted on the LED. The lens defines a passageway at a central portion thereof. The passageway runs through the lens. The lens includes a concave light emitting surface at a top thereof. Light output from the LED with... Agent: Foxconn Technology Co., Ltd.

20110127559 - Light emission device package and method of fabricating the same: A light emission device package including a substrate, an opening portion on the substrate, a heat radiation frame on the opening portion, the heat radiation frame protruding from the substrate, a light emission device chip on the heat radiation frame, and a sealant member on the light emission device chip.... Agent:

20110127554 - Light emitting device and method of manufacturing the same: A light emitting device may include a substrate, an n-type clad layer, an active layer, and a p-type clad layer. A concave-convex pattern having a plurality of grooves and a mesa between each of the plurality of grooves may be formed on the substrate, and a reflective layer may be... Agent: Samsung Electronics Co., Ltd.

20110127558 - Light emitting diode package and method of manufacturing the same: There is provided a light emitting diode package and a method of manufacturing the same. A light emitting diode package according to an aspect of the invention may include: an LED chip; a body part having the LED chip mounted thereon; a pair of reflective parts extending from the body... Agent:

20110127557 - Light fixture using near uv solid state device and remote semiconductor nanophosphors to produce white light: For general lighting applications, a semiconductor chip produces near ultraviolet (UV) electromagnetic energy in a range of 380-420 nm, e.g. 405 nm. Semiconductor nanophosphors, typically doped semiconductor nanophosphors, are remotely positioned in an optic of a light fixture. Each phosphor is of a type or configuration that when excited by... Agent: AblIPHolding LLC

20110127552 - Light output device: The present invention relates to a light output device (100) comprising a LED package (4) at least partly embedded in a translucent layer (5) of a thermoplastic material, characterized in that the translucent layer (5) comprises light scattering particles (6) having a higher thermal conductivity than the thermal conductivity of... Agent: Koninklijke Philips Electronics N.v.

20110127551 - Method for enhancing electrical injection efficiency and light extraction efficiency of light-emitting devices: A method for enhancing electrical injection efficiency and light extraction efficiency of a light-emitting device is disclosed. The method includes the steps of: providing a site layer on the light-emitting device; placing a protection layer on the site layer; forming a cavity through the protection layer and the site layer;... Agent: Walsin Lihwa Corporation

20110127556 - Organic light emitting diode lighting apparatus: An organic light emitting diode lighting apparatus includes: a substrate main body including a sealing area and a sealing line surrounding the sealing area; a plurality of first line electrodes of which both ends are located within the sealing area; a plurality of second line electrodes, at least one end... Agent: Samsung Mobile Display Co., Ltd.

20110127555 - Solid state light emitter with phosphors dispersed in a liquid or gas for producing high cri white light: A solid state white light emitting device includes a semiconductor chip for producing electromagnetic energy and may additionally include a reflector forming an optical integrating cavity. Phosphors, such as semiconductor nanophosphors dispersed in a light transmissive liquid or gas material, within the chip packaging of the solid state device itself,... Agent: Renaissance Lighting, Inc.

20110127563 - Die-bonding method of led chip and led manufactured by the same: A die-bonding method is suitable for die-bonding a LED chip having a first metal thin-film layer to a substrate. The method includes forming a second metal thin film layer on a surface of the substrate; forming a die-bonding material layer on the second metal thin film layer; placing the LED... Agent: Industrial Technology Research Institute

20110127562 - Electronic substrate having low current leakage and high thermal conductivity and associated methods: Electrical substrates having low current leakage and high thermal conductivity, including associated methods, are provided. In one aspect for example, a multilayer substrate having improved thermal conductivity and dielectric properties can include a metal layer having a working surface with a local Ra of greater than about 0.1 micron, a... Agent:

20110127568 - Lateral semiconductor light emitting diodes having large area contacts: Light emitting diodes include a diode region having first and second opposing faces that include therein an n-type layer and a p-type layer, an anode contact that ohmically contacts the p-type layer and extends on the first face, and a cathode contact that ohmically contacts the n-type layer and also... Agent: Cree, Inc.

20110127569 - Led module: An LED module A1 includes an LED chip 1, a lead group 4 including a lead 4A on which the LED chip 1 is mounted and a lead 4B spaced apart from the lead 4A, a resin package 2 covering part of the lead group 4, and mounting terminals 41... Agent: Rohm Co., Ltd.

20110127565 - Light emitting device and light emitting device package: Disclosed is a light emitting device including a second conductive semiconductor layer; an active layer on the second conductive semiconductor layer; a first semiconductor layer on the active layer, the first semiconductor layer having at least one lateral side with a step portion; and a lateral electrode on the step... Agent:

20110127566 - Light emitting device and method of manufacturing the same: Disclosed is a light emitting device and a method of manufacturing the same. The light emitting device includes a body, a first electrode installed in the body and a second electrode separated from the first electrode, a light emitting chip formed on one of the first and second electrodes, and... Agent:

20110127560 - Light-emitting diode chip and method of manufactruring the same: An LED chip includes a substrate and a p-n junction type semiconductor light-emitting structure. The substrate has a first surface and a second surface opposite to the second surface. The p-n junction type semiconductor light-emitting structure is arranged on the first surface of the substrate. A plurality of blind holes... Agent: Hon Hai Precision Industry Co., Ltd.

20110127564 - Method for producing a plurality of radiation-emitting components and radiation-emitting component: A method for producing a plurality of radiation-emitting components includes A) providing a carrier layer having a plurality of mounting regions separated from one another by separating regions; B) applying an interlayer to the separating regions; C) applying a respective radiation-emitting device to each of the plurality of mounting regions;... Agent: Osram Opto Semiconductors Gmbh

20110127561 - Organic electroluminescence device and method of fabricating the same: [Solution] The present invention refers to organic electroluminescence devices having a plurality of light emitting layers 4 between an anode 1 and a cathode 2 with the intermediate layer 3 being interposed between two of the light emitting layers. The intermediate layer 3 comprises one layer 3a selected from a... Agent:

20110127567 - Supporting substrate for preparing semiconductor light-emitting device and semiconductor light-emitting device using supporting substrates: The present invention is related to a supporting substrate for preparing a semiconductor light-emitting device employing a multi-layered light-emitting structure thin-film and a method for preparing a semiconductor light-emitting device employing the supporting substrate for preparing a semiconductor light-emitting device. The supporting substrate for preparing a semiconductor light-emitting device is... Agent: Korea University Industrial & Academic Collaboration Foundation

20110127570 - Organic light emitting diode display: Disclosed is an organic light emitting diode (OLED) device, which includes: an organic light emitting diode including a first electrode, a second electrode, and an emission layer interposed between the first electrode and the second electrode; a base substrate supporting the organic light emitting diode; and a sealing member disposed... Agent: Samsung Mobile Display Co., Ltd.

20110127571 - Mixed source growth apparatus and method of fabricating iii-nitride ultraviolet emitters: A device for forming a Group III-V semiconductor on a substrate. The device has a primary chamber comprising a substrate and a heat source for heating the substrate to a first temperature. A secondary chamber comprises a metal source and a second heat source for heating the secondary chamber to... Agent: Nitek, Inc.

20110127572 - Gated resonant tunneling diode: A gated resonant tunneling diode (GRTD) that operates without cryogenic cooling is provided. This GRTD employs conventional CMOS process technology, preferably at the 65 nm node and smaller, which is different from other conventional quantum transistors that require other, completely different process technologies and operating conditions. To accomplish this, the... Agent: Texas Instruments Incorporated

20110127573 - Bi-directional transistor with by-pass path and method therefor: In one embodiment, a transistor is formed to have a first current flow path to selectively conduct current in both directions through the transistor and to have a second current flow path to selectively conduct current in one direction.... Agent:

20110127574 - Device for preventing current-leakage: A device for preventing current-leakage is located between a transistor and a capacitor of a memory cell. The two terminals of the device for preventing current-leakage are respectively connected with a slave terminal of the transistor and an electric pole of the capacitor. The device for preventing current-leakage has at... Agent: Inotera Memories, Inc.

20110127575 - Semiconductor device: An n+-emitter layer arranged under an emitter electrode is formed of convex portions arranged at predetermined intervals and a main body coupled to the convex portions. A convex portion region is in contact with the emitter electrode, and a p+-layer doped more heavily than a p-base layer is arranged at... Agent: Mitsubishi Electric Corporation

20110127576 - Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method: A bipolar power semiconductor component configured as an IGBT includes a semiconductor body, in which a p-doped emitter, an n-doped base, a p-doped base and an n-doped main emitter are arranged successively in a vertical direction. The p-doped emitter has a number of heavily p-doped zones having a locally increased... Agent: Infineon Technologies Ag

20110127577 - Latch-up free vertical tvs diode array structure using trench isolation: A method for manufacturing a transient voltage suppressing (TVS) array substantially following a manufacturing process for manufacturing a vertical semiconductor power device. The method includes a step of opening a plurality of isolation trenches in an epitaxial layer of a first conductivity type in a semiconductor substrate followed by applying... Agent:

20110127578 - Manufacturing method for semiconductor device and semiconductor device: A manufacturing method for semiconductor device includes: forming an opening, in a surface of a semiconductor substrate being composed of first atom, the opening having an opening ratio y to an area of the surface of the semiconductor substrate ranging from 5 to 30%; forming an epitaxial layer in the... Agent: Kabushiki Kaisha Toshiba

20110127580 - Capacitor-less memory device: Provided is a capacitorless memory device. The device includes a semiconductor substrate, an insulating layer disposed on the semiconductor substrate, a storage region disposed on a partial region of the insulating layer, a channel region disposed on the storage region to provide a valence band energy offset between the channel... Agent: Industry-university Cooperation Foundation Hanyang University

20110127579 - Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device: One embodiment is a method for manufacturing a stacked oxide material, including the steps of forming a first oxide component over a base component, causing crystal growth which proceeds from a surface toward an inside of the first oxide component by first heat treatment to form a first oxide crystal... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110127581 - Heterostructure for electronic power components, optoelectronic or photovoltaic components: The present invention relates to a support for the epitaxy of a layer of a material of composition AlxInyGa(1-x-y)N, where 0≦x≦1, 0≦y≦1 and x+y≦1, having successively from its base to its surface; a support substrate, a bonding layer, a monocrystalline seed layer for the epitaxial growth of the layer of... Agent:

20110127582 - Multiplying pattern density by single sidewall imaging transfer: A method for fabricating an integrated circuit includes patterning a mandrel over a layer to be patterned. Dopants are implanted into exposed sidewalls of the mandrel to foam at least two doped layers having at least one undoped region adjacent to the doped layers. The doped layers are selectively etched... Agent: International Business Machines Corporation

20110127584 - Method for manufacturing infrared image sensor and infrared image sensor: In the method for manufacturing the infrared image sensor, first, a thermal insulation layer (33) is made by forming a silicon dioxide film (31) on a first area (A1) followed by forming a silicon nitride film (32) on the silicon dioxide film (31). The silicon dioxide film (31) has compression... Agent:

20110127583 - Semiconductor component with integrated hall effect sensor: A semiconductor device with an integrated circuit on a semiconductor substrate comprises a Hall effect sensor in a first active region and a lateral high voltage MOS transistor in a second active region. The semiconductor device of the present invention is characterized in that the structure of the integrated Hall... Agent: X-fab Semiconductor Foundries Ag

20110127585 - Lateral junction field-effect transistor: A lateral junction field-effect transistor capable of preventing the occurrence of leakage current and realizing a sufficient withstand voltage can be provided. In a lateral JFET according to the present invention, a buffer layer is located on a main surface of a SiC substrate and includes a p-type impurity. A... Agent: Sumitomo Electric Industries, Ltd.

20110127586 - Lateral super junction device with high substrate-gate breakdown and built-in avalanche clamp diode: A lateral super junction JFET is formed from stacked alternating P type and N type semiconductor layers over a P-epi layer supported on an N+ substrate. An N+ drain column extends down through the super junction structure and the P-epi to connect to the N+ substrate to make the device... Agent:

20110127587 - Semiconductor device and method for forming the same: The present invention relates to a semiconductor device, which includes a junction region formed in an active area of a semiconductor substrate; a trench defining a buried gate predetermined area within the semiconductor substrate; a gate electrode buried in an lower portion of the trench; an ion implantation region formed... Agent: Hynix Semiconductor Inc.

20110127588 - Enhancing mosfet performance by optimizing stress properties: A device and method for improving performance of a transistor includes gate structures formed on a substrate having a spacing therebetween. The gate structures are formed in an operative relationship with active areas fainted in the substrate. A stress liner is formed on the gate structures. An angled ion implantation... Agent: International Business Machines Corporation

20110127590 - Increasing stability of a high-k gate dielectric of a high-k gate stack by an oxygen rich titanium nitride cap layer: In a replacement gate approach, the oxygen contents of a cap material may be increased, thereby providing more stable characteristics of the cap material itself and of the high-k dielectric material. Consequently, upon providing a work function adjusting metal species at a very advanced manufacturing stage, corresponding additional treatments may... Agent:

20110127591 - Method for programming an anti-fuse element, and semiconductor device: A method for programming an anti-fuse element in which the ratio between current values before and after writing is increased to ensure accuracy in making a judgment about how writing has been performed on the anti-fuse element. The method for programming the anti-fuse element as a transistor includes the steps... Agent: Renesas Electronics Corporation

20110127589 - Semiconductor structure haivng a metal gate and method of forming the same: A method of forming a semiconductor structure having a metal gate. Firstly, a semiconductor substrate is provided. Subsequently, at least a gate structure is formed on the semiconductor substrate. Afterwards, a spacer structure is formed to surround the gate structure. Then, an interlayer dielectric is formed. Afterwards, a planarization process... Agent:

20110127592 - Method of manufacturing semiconductor device, semiconductor device, solid-state imaging device, and solid-state imaging apparatus: A method of manufacturing a semiconductor device includes the steps of forming a gate electrode of a transistor on an insulator layer on a surface of a semiconductor substrate, forming an isolation region by performing ion implantation of an impurity of a first conductivity type into the semiconductor substrate, forming... Agent: Sony Corporation

20110127593 - Photoelectric conversion device and its manufacturing method: A photoelectric conversion device in accordance with an aspect of the present invention includes a thin-film transistor formed on a substrate, and a photo diode electrically connected to the thin-film transistor, wherein the photo diode includes a lower electrode connected to a drain electrode of the thin-film transistor, a photoelectric... Agent: Mitsubishi Electric Corporation

20110127595 - Integrated circuit devices including a multi-layer structure with a contact extending therethrough: Integrated circuit devices have a first substrate layer and a first transistor on the first substrate layer. A first interlayer insulating film covers the first transistor. A second substrate layer is on the first interlayer insulating film and a second transistor is on the second substrate layer. A second interlayer... Agent:

20110127594 - Semiconductor device and manufacturing the same: A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is formed at... Agent:

20110127596 - Memory structure having volatile and non-volatile memory portions: A memory array is provided that includes a transistor having two active gates sharing a source, a drain, and a channel of the transistor. One of the active gates may be coupled to a volatile memory portion of a memory cell, such as a DRAM cell, and the other active... Agent: Micron Technology, Inc.

20110127597 - Nonvolatile semiconductor memory device: A nonvolatile semiconductor memory device with charge storage layers with high reliability is provided. A plurality of insulating films and a plurality of electrode films 14 are alternately stacked on a substrate 11, and a plurality of selection gate electrodes 17 extending in the X direction and a plurality of... Agent: Kabushiki Kaisha Toshiba

20110127598 - Flash memory device having a graded composition, high dielectric constant gate insulator: A graded composition, high dielectric constant gate insulator is formed between a substrate and floating gate in a flash memory cell transistor. The gate insulator comprises amorphous germanium or a graded composition of germanium carbide and silicon carbide. If the composition of the gate insulator is closer to silicon carbide... Agent: Micron Technology, Inc.

20110127599 - Split gate non-volatile flash memory cell having a floating gate, control gate, select gate and an erase gate with an overhang over the floating gate, array and method of manufacturing: An improved split gate non-volatile memory cell is made in a substantially single crystalline substrate of a first conductivity type, having a first region of a second conductivity type, a second region of the second conductivity type, with a channel region between the first region and the second region in... Agent:

20110127600 - Semiconductor device and method of fabricating the same: A semiconductor device and a method of fabricating thereof, including preparing a substrate including a first and second region; forming first and second conductive lines on the first and second region, respectively, the first conductive lines being spaced apart at a first interval and the second conductive lines being spaced... Agent:

20110127601 - Semiconductor devices and methods for making the same: Semiconductor devices and methods for making such devices that are especially suited for high-frequency applications are described. The semiconductor devices combine a SIT (or a junction field-effect transistor [JFET]) architecture with a PN super-junction structure. The SIT architecture can be made using a trench formation containing a gate that is... Agent:

20110127602 - Dual channel trench ldmos transistors and bcd process with deep trench isolation: A dual channel trench LDMOS transistor includes a substrate of a first conductivity type; a semiconductor layer of a second conductivity type formed on the substrate; a first trench formed in the semiconductor layer where a trench gate is formed in an upper portion of the first trench; a body... Agent: Alpha And Omega Semiconductor Incorporated

20110127603 - Semiconductor component and method of manufacture: A semiconductor component that includes gate electrodes and shield electrodes and a method of manufacturing the semiconductor component. A semiconductor material has a device region, a gate contact region, a termination region, and a drain contact region. One or more device trenches is formed in the device region and one... Agent:

20110127604 - Semiconductor device: A semiconductor device having a field plate structure shows a high electric field relaxation effect. The semiconductor device comprises a nitride semiconductor layer formed on a substrate, a source electrode formed so as to electrically contact the nitride semiconductor layer, a drain electrode formed so as to electrically contact the... Agent:

20110127605 - Semiconductor device with buried bit lines and method for fabricating the same: A semiconductor device includes: a semiconductor substrate configured to include a plurality of trenches therein; a plurality of buried bit lines each configured to fill a portion of each trench; a plurality of active pillars each formed in an upper portion of each buried bit line; a plurality of vertical... Agent: Hynix Semiconductor Inc.

20110127606 - Lateral super junction device with high substrate-drain breakdwon and built-in avalanche clamp diode: This invention discloses configurations and methods to manufacture lateral power device including a super junction structure with an avalanche clamp diode formed between the drain and the gate. The lateral super-junction structure reduces on-resistance, while the structural enhancements, including an avalanche clamping diode and an N buffer region, increase the... Agent:

20110127607 - Stepped-source ldmos architecture: A semiconductor device can include a source region near a working top surface of a semiconductor region. The device can also include a gate located above the working top surface and located laterally between the source and a drain region. The source region and the gate can at least partially... Agent: Fairchild Semiconductor Corporation

20110127608 - Extremely thin semiconductor on insulator semiconductor device with suppressed dopant segregation: A method of fabricating a semiconductor device is provided in which the channel of the device is present in an extremely thin semiconductor-on-insulator (ETSOI) layer, i.e., a semiconductor layer having a thickness of less than 20 nm. In one embodiment, the method begins with forming a first semiconductor layer and... Agent: International Business Machines Corporation

20110127609 - Semiconductor memory device: The present invention aims at providing a semiconductor memory device that can be manufactured by a MOS process and can realize a stable operation. A storage transistor has impurity diffusion regions, a channel formation region, a charge accumulation node, a gate oxide film, and a gate electrode. The gate electrode... Agent: Renesas Electronics Corporation

20110127610 - Multiple-gate semiconductor device and method: A system and method for manufacturing multiple-gate semiconductor devices is disclosed. An embodiment comprises multiple fins, wherein intra-fin isolation regions extend into the substrate less than inter-fin isolation regions. Regions of the multiple fins not covered by the gate stack are removed and source/drain regions are formed from the substrate... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110127612 - Semiconductor device and method for fabricating semiconductor device: A semiconductor device includes: an active region configured over a substrate to include a first conductive-type first deep well and second conductive-type second deep well forming a junction therebetween. A gate electrode extends across the junction and over a portion of first conductive-type first deep well and a portion of... Agent:

20110127611 - Semiconductor device and method for manufacturing the same: A semiconductor device comprises an active region having an upper portion and a sidewall portion which are protruded from the top surface of a device isolation region, and a silicide film disposed in the upper portion and the sidewall portion of the active region, thereby effectively reducing resistance in a... Agent: Hynix Semiconductor Inc.

20110127613 - High-k metal gate electrode structures formed by separate removal of placeholder materials using a masking regime prior to gate patterning: In a replacement gate approach in sophisticated semiconductor devices, the place-holder material of gate electrode structures of different type are separately removed. Furthermore, electrode metal may be selectively formed in the resulting gate opening, thereby providing superior process conditions in adjusting a respective work function of gate electrode structures of... Agent:

20110127614 - Reducing the series resistance in sophisticated transistors by embedding metal silicide contact regions reliably into highly doped semiconductor material: In sophisticated transistor elements, an additional silicon-containing semiconductor material may be provided after forming the drain and source extension regions, thereby reducing the probability of forming metal silicide regions, such as nickel silicide regions, which may extend into the channel region, thereby causing a significant increase in series resistance. Consequently,... Agent:

20110127615 - Semiconductor apparatus and manufacturing method thereof: A high-performance semiconductor apparatus which can be easily introduced into the MOS process, reduces the leakage current (electric field strength) between the emitter and the base, and is insusceptible to noise or surge voltage, and a manufacturing method of the semiconductor apparatus. The emitter 111 is formed by performing the... Agent:

20110127616 - Work function adjustment in high-k gate stacks for devices of different threshold voltage: In sophisticated semiconductor devices, different threshold voltage levels for transistors may be set in an early manufacturing stage, i.e., prior to patterning the gate electrode structures, by using multiple diffusion processes and/or gate dielectric materials. In this manner, substantially the same gate layer stacks, i.e., the same electrode materials and... Agent:

20110127618 - Performance enhancement in pfet transistors comprising high-k metal gate stack by increasing dopant confinement: In a P-channel transistor comprising a high-k metal gate electrode structure, a superior dopant profile may be obtained, at least in the threshold adjusting semiconductor material, such as a silicon/germanium material, by incorporating a diffusion blocking species, such as fluorine, prior to forming the threshold adjusting semiconductor material. Consequently, the... Agent:

20110127617 - Performance enhancement in transistors comprising high-k metal gate stack by an early extension implantation: In sophisticated transistor elements, integrity of sensitive gate materials may be enhanced while, at the same time, the lateral offset of extension regions may be reduced. To this end, at least a portion of the extension regions may be implanted at an early manufacturing stage, i.e., in the presence of... Agent:

20110127619 - Biosensor devices and method for fabricating the same: A biosensor device is provided, including a first semiconductor layer formed over an interconnect structure. A plurality of detection elements are formed in the first semiconductor layer. An optical filter layer is formed over and physically contacts the first semiconductor layer. A second semiconductor layer is formed over the optical... Agent:

20110127621 - Electrostatic vibrator and electronic apparatus: A silicon oxide film 113 is formed on the vibrating parts 102 and 103 of an MEMS-type electrostatically-actuated flexural vibrator. At least one structure where no oxide film is formed is provided near the vibrating parts 102 and 103. By employing a structure in which both ends of the structure... Agent:

20110127620 - Mems integrated chip and method for making same: The present invention discloses a MEMS (Micro-Electro-Mechanical System) chip and a method for making the MEMS chip. The MEMS chip comprises: a first substrate having a first surface and a second surface opposing each other; a microelectronic device area on the first surface; a first MEMS device area on the... Agent: Pixart Imaging Incorporation, R.o.c.

20110127622 - Method for capping a mems wafer and mems wafer: The invention relates to a method for capping a MEMS wafer (1), in particular a sensor and/or actuator wafer, with at least one mechanical functional element (10). According to the invention, it is provided that the movable mechanical functional element (10) is fixed by means of a sacrificial layer (14),... Agent: Robert Bosch Gmbh

20110127623 - Mems microphone packaging and mems microphone module: A method for producing a microphone module includes arranging a MEMS microphone structure on a first surface of a first substrate, the first substrate further including a second surface, which is opposite to the first surface. Furthermore, a cap is arranging on the first surface of the first substrate such... Agent:

20110127624 - Mems sensor: An MEMS sensor is described. The MEMS sensor may include a substrate, a lower thin film provided in contact with a surface of the substrate, and an upper thin film opposed to the lower thin film at an interval on the side opposite to the substrate.... Agent: Rohm Co., Ltd.

20110127625 - Resonator: A resonator comprising a beam formed from a first material having a first Young's modulus and a first temperature coefficient of the first Young's modulus, and a second material having a second Young's modulus and a second temperature coefficient of the second Young's modulus, a sign of the second temperature... Agent: Nxp B.v.

20110127626 - Fabrication and integration of devices with top and bottom electrodes including magnetic tunnel junctions: An electronic device manufacturing process includes depositing a bottom electrode layer. Then an electronic device is fabricated on the bottom electrode layer. Patterning of the bottom electrode layer is performed after fabricating the electronic device and in a separate process from patterning a top electrode. A first dielectric layer is... Agent: Qualcomm Incorporated

20110127627 - Sensing environmental parameter through stress induced in ic: A sensor is provided for sensing a value of a physical parameter characteristic of the sensor's environment. The sensor is implemented in semiconductor technology. A behavior of the sensor's electronic circuitry is affected by stress. The stress is induced by a film covering the circuitry or only part thereof. The... Agent: Nxp B.v.

20110127628 - Ion implantation to change the optical properties of the passivation films in cmos imager devices: Imager sensor pixels, image sensor and methods for forming image sensors. An image sensor pixel includes a photosensor, a microlens that receives incident light, at least one fabrication layer between the photosensor and the microlens and a passivation layer between the microlens and the at least one fabrication layer. The... Agent: Aptina Imaging Corporation

20110127629 - Solid-state imaging device, method of manufacturing the same, and electronic apparatus: A solid state imaging device including a semiconductor layer, an insulating material in an opening penetrating a surface of the semiconductor layer, and a protective film that is resistant to etching covering one end of the insulating material on an interior side of the semiconductor layer.... Agent: Sony Corporation

20110127630 - Image sensor and method for fabricating the same: An image sensor includes a trench formed by a shallow trench isolation (STI) process, a channel stop layer formed over a substrate in the trench, an isolation structure filled in the trench, and a photodiode formed in the substrate adjacent to a sidewall of the trench. In more detail of... Agent: Crosstek Capital, LLC

20110127631 - Solid-state imaging device, method for manufacturing solid-state imaging device, method for manufacturing solid-state imaging element, and semiconductor device: A solid-state imaging device includes a semiconductor substrate configured to include a solid-state imaging element that is provided with a photoelectric conversion region, and a scribe line region that is provided along a periphery of the solid-state imaging element, a wiring layer that is formed to be layered on the... Agent: Sony Corporation

20110127632 - Semiconductor memory devices and methods of manufacturing the same: A semiconductor memory device includes a substrate, a patterned dielectric layer on the substrate, a patterned conductive layer on the patterned dielectric layer, and a plurality of isolation structures to provide electrical isolation for the patterned conductive layer. Each of the isolation structures includes a base in the substrate, a... Agent: Macronix International Co., Ltd.

20110127633 - Slotted configuration for optimized placement of micro-components using adhesive bonding: An arrangement for improving adhesive attachment of micro-components in an assembly utilizes a plurality of parallel-disposed slots formed in the top surface of the substrate used to support the micro-components. The slots are used to control the flow and “shape” of an adhesive “dot” so as to quickly and accurately... Agent: Lightwire, Inc.

20110127634 - Isolation structure in a memory device: An isolation structure in a memory device and a method for fabricating the isolation structure. In the method, a first trench is formed in a cell region of a semiconductor substrate and a second trench in a peripheral region of the semiconductor substrate. A liner layer comprising a silicon nitride... Agent: Hynix Semiconductor Inc.

20110127635 - Integrated beol thin film resistor: In the course of forming a resistor in the back end of an integrated circuit, an intermediate dielectric layer is deposited and a trench etched through it and into a lower dielectric layer by a controllable amount, so that the top of a resistor layer deposited in the trench is... Agent: International Business Machines Corporation

20110127636 - Integrated passive device assembly: There is provided an integrated passive device assembly including: a substrate having a wiring pattern disposed therein; a mounting part disposed on an upper surface of the substrate, formed of an insulating material, and having an integrated passive device mounted on an upper surface thereof; a conductive pattern disposed inside... Agent: Samsung Electro-mechanics Co., Ltd.

20110127637 - Nanopillar e-fuse structure and process: Techniques for incorporating nanotechnology into electronic fuse (e-fuse) designs are provided. In one aspect, an e-fuse structure is provided. The e-fuse structure includes a first electrode; a dielectric layer on the first electrode having a plurality of nanochannels therein; an array of metal silicide nanopillars that fill the nanochannels in... Agent: International Business Machines Corporation

20110127638 - Complementary doping methods and devices fabricated therefrom: Improved complementary doping methods are described herein. The complementary doping methods generally involve inducing a first and second chemical reaction in at least a first and second portion, respectively, of a dopant source, which has been disposed on a thin film of a semiconductor or semimetal material. The chemical reactions... Agent: Georgia Tech Research Corporation

20110127639 - Semiconductor nanostructure: The present disclosure relates to a semiconductor nanostructure. The semiconductor nanostructure includes a substrate and at least one ridge. The substrate includes a first crystal plane and a second crystal plane perpendicular to the first crystal plane. The at least one ridge extends from the first crystal plane along a... Agent: Hon Hai Precision Industry Co., Ltd.

20110127640 - Stiffening layers for the relaxation of strained layers: The present invention relates to a method for relaxing a strained material layer by providing a strained material layer and a low-viscosity layer formed on a first face of the strained material layer; forming a stiffening layer on at least one part of a second face of the strained material... Agent:

20110127643 - Method and apparatus for conformable polishing: A multi-station polish system and process for polishing thin, flat (planar) and rigid workpieces. Workpieces are conveyed through multiple polishing stations that include a bulk material removal belt polishing station and finishing rotary polishing station. The bulk of the material is relatively quickly removed at the bulk removal station using... Agent:

20110127642 - Package including at least one topological feature on an encapsulant material to resist out-of-plane deformation: Embodiments include but are not limited to apparatuses and systems including semiconductor packages, e.g. memory packages, including a die and an encapsulant material formed over the die, and at least one topological feature formed on an external surface of the encapsulant material, and configured to resist out-of-plane deformation of the... Agent:

20110127641 - Self-organized pin-type nanostructures, and production thereof on silicon: By means of an RIE etch process for silicon (3), a pin-type structure (4,4a) without crystal defects is formed with high aspect ratio and with nano dimensions on the surface of silicon wafers without any additional patterning measures (e-beam, interference lithography, and the like) by selecting the gas components of... Agent: Technische Universitaet Iimenau

20110127648 - Heat spreader structures in scribe lines: An integrated circuit structure includes a first chip including a first edge; and a second chip having a second edge facing the first edge. A scribe line is between and adjoining the first edge and the second edge. A heat spreader includes a portion in the scribe line, wherein the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110127647 - Semiconductor device and method for making the same: A semiconductor device includes a semiconductor substrate having a main surface in which a semiconductor element region where a plurality of functional elements are formed is formed; a multilevel wiring layer disposed on the main surface of the semiconductor substrate; a first organic insulating material layer disposed on the multilevel... Agent: Fujitsu Semiconductor Limited

20110127644 - Wafer and method for forming the same: A wafer and a method for forming the same are disclosed. The wafer forming method can separate respective chips from others by performing a Deep Reactive Ion Etching (DRIE) process on a wafer including a plurality of chips. The wafer includes a plurality of chips configured to be arranged in... Agent: Hynix Semiconductor Inc.

20110127645 - Wafer and method for forming the same: A wafer and a method for forming the same are disclosed. The wafer forming method can separate respective chips from others by performing a Deep Reactive Ion Etching (DRIE) process on a wafer including a plurality of chips. The wafer includes a plurality of chips configured to be arranged in... Agent: Hynix Semiconductor Inc.

20110127646 - Wafer and method for forming the same: A wafer and a method for forming the same are disclosed. The wafer forming method can separate respective chips from others by performing a Deep Reactive Ion Etching (DRIE) process on a wafer including a plurality of chips. The wafer includes a plurality of chips configured to be arranged in... Agent: Hynix Semiconductor Inc.

20110127649 - 3d interconnection structure and method of manufacturing the same: Provided are a three-dimensional (3D) interconnection structure and a method of manufacturing the same. The 3D interconnection structure includes a wafer that has one side of an inverted V-shape whose middle portion is convex and a lower surface having a U-shaped groove for mounting a circuit, and a first electrode... Agent: Electronics And Telecommunications Research Institute

20110127650 - Method of manufacturing a semiconductor device and semiconductor devices resulting therefrom: A method is disclosed for manufacturing a semiconductor device, including providing a substrate comprising a main surface with a non flat topography, the surface comprising at least one substantial topography variation, forming a first capping layer over the main surface such that, during formation of the first capping layer, local... Agent: Katholieke Universiteit Leuven, K.u. Leuven R&d

20110127651 - Chain scission polyester polymers for photoresists: Polymers for extreme ultraviolet and 193 nm photoresists are disclosed. The polymers comprise a photoacid generator (PAG) residue, an acid cleavable residue and a diacid joined by ester linkages. The polymers include a photoacid generating diol, a diacid and an acid table diol.... Agent: The Research Foundation Of State University Of New

20110127652 - Three-dimensional semiconductor integrated circuit device and method of fabricating the same: A three-dimensional semiconductor integrated circuit device is provided. A first semiconductor chip includes a solid-state circuit and is smaller than a base, and is stacked on the base. The first chip is buried by a first filling material having approximately the same contour as the base. Buried electrodes that penetrate... Agent: Zycube Co., Ltd.

20110127653 - Package system with a shielded inverted internal stacking module and method of manufacture thereof: A method of manufacture of a package system includes: providing a base package substrate having conductive elements; providing an internal stacking module having a semiconductor die mounted on a package substrate and a first encapsulant surrounding at least portions of the semiconductor die and the package substrate; covering at least... Agent:

20110127654 - Semiconductor package and manufacturing methods thereof: A semiconductor package and manufacturing methods thereof are provided. In one embodiment, the semiconductor package includes a die, a shield, a package body, and a redistribution layer. The die has an active surface and an inactive surface. The shield is disposed over the inactive surface of the die. The package... Agent: Advanced Semiconductor Engineering, Inc..,

20110127655 - Semiconductor device: In the semiconductor device, a sidewall portion of the concave cap includes an inside surface facing toward the conductor portion of the wiring board, an outside surface positioned on an opposite side to the inside surface, and a bottom surface adhered onto the first surface of the wiring board. The... Agent: Shinko Electric Industries Co., Ltd.

20110127656 - Semiconductor-device mounted board and method of manufacturing the same: In a method of manufacturing a semiconductor-device mounted board, connection terminals are formed on electrode pads on a semiconductor integrated circuit respectively. A first insulating layer is formed to cover the connection terminals. A plate-like medium having a rough surface is disposed on the first insulating layer. The rough surface... Agent: Shinko Electric Industries Co., Ltd.

20110127657 - Wiring circuit structure and manufacturing method for semiconductor device using the structure: A conductor layer 2 is formed as a circuit pattern on a base insulating layer 1, a terminal 3 is formed thereon, and a supporting column 4 is formed in the vicinity of the terminal on the upper face of the base insulating layer 1. Here, supposing the protrusion height... Agent: Nitto Denko Corporation

20110127658 - Muti thickness lead frame: A lead frame includes a lead frame 11 made by a rolled single-layer of copper and has a lead portion and a chip support portion. The thickness of the lead portion is the same as that of the chip support portion. A heat dispensing plate made of Aluminum is connected... Agent: Great Team Backend Foundry, Inc.

20110127659 - Package including an interposer having at least one topological feature: Embodiments include but are not limited to apparatuses and systems including semiconductor packages, e.g. memory packages, having an interposer including at least one topological feature, such as a depression in a surface of the interposer, a die coupled to the surface of the interposer, and an encapsulant material formed over... Agent:

20110127660 - Methods and materials for the reduction and control of moisture and oxygen in oled devices: Embodiments of the invention provide an electronic device which may include an interior compartment housing at least one electronic component that may be reactive to target impurities. The electronic component may include at least a cathode and an anode. A purifier material may be interspersed within a conducting polymer layer... Agent: Matheson Tri-gas

20110127661 - Integrated circuit packaging system with flip chip and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: forming external interconnects having bases of a first thickness and tips of a second thickness extending inwardly directly toward each other; connecting a first circuit device between the tips; attaching a second circuit device to the first circuit device... Agent:

20110127662 - Integrated circuit packaging system with stackable package and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing a package base having an inward base side and an outward base side; mounting a device over the inward base side and connected to the outward base side; connecting a silicon interposer having a through silicon via to... Agent:

20110127663 - Magnetic particle-based composite materials for semiconductor packages: A semiconductor package is described. The semiconductor package includes a substrate and an integrated heat spreader disposed above and coupled with the substrate. A cavity is disposed between the substrate and the integrated heat spreader. A semiconductor die is disposed above the substrate and in the cavity. An array of... Agent:

20110127664 - Electronic package including high density interposer and circuitized substrate assembly utilizing same: An electronic package for interconnecting a high density pattern of conductors of an electronic device (e.g., semiconductor chip) of the package and a less dense pattern of conductors on a circuitized substrate (e.g., PCB), the package including in one embodiment but a single thin dielectric layer (e.g., Kapton) with a... Agent:

20110127665 - Integrated circuit module: An integrated circuit module includes a carrier substrate, a semiconductor die disposed in the carrier substrate, a ground pad disposed on the carrier substrate, and an antenna partially embedded in the carrier substrate. The antenna includes a ground layer in thermal contact with the ground pad for dissipating heat generated... Agent: Hon Hai Precision Industry Co., Ltd.

20110127666 - Chip package and fabrication method thereof: An embodiment of the present invention relates to a chip package and fabrication method thereof, which includes a chip protection layer or an additional etching stop layer to cover conducting pads to prevent dicing residue from damaging or scratching the conducting pads. According to another embodiment, a chip protection layer,... Agent:

20110127667 - Adhesive for connection of circuit member and semiconductor device using the same: An adhesive for connecting circuit members, which is interposed between a semiconductor chip having protruding connecting terminals and a board having wiring patterns formed thereon for electrically connecting the connecting terminals and the wiring patterns facing each other and bonding the semiconductor chip and the board by applying pressure/heat, containing... Agent: Hitachi Chemical Company, Ltd.

20110127668 - Semiconductor device and method of forming bump structure with multi-layer ubm around bump formation area: A semiconductor wafer has a first conductive layer formed over its active surface. A first insulating layer is formed over the substrate and first conductive layer. A second conductive layer is formed over the first conductive layer and first insulating layer. A UBM layer is formed around a bump formation... Agent: Stats Chippac, Ltd.

20110127669 - Solder structure, method for forming the solder structure, and semiconductor module including the solder structure: The invention provides a solder structure which is least likely to develop Sn whiskers and a method for forming such a solder structure. The solder structure includes an Sn alloy capable of a solid-liquid coexistent state and an Au (or Au alloy) coating covering at least part of the surface... Agent:

20110127670 - Chip package and manufacturing method thereof: A chip package includes a substrate having an upper and a lower surface and including: at least a first contact pad; a non-optical sensor chip disposed overlying the upper surface, wherein the non-optical sensor chip includes at least a second contact pad and has a first length; a protective cap... Agent:

20110127671 - Semiconductor device: There is provided a semiconductor device which makes equalization of wirings between address system chips easy and reduce the influence of crosstalk noise and capacitive coupling noise among data system wirings for connecting the chips. There are mounted, on a module board, a plurality of stacked memory chips which a... Agent: Renesas Electronics Corporation

20110127672 - Semiconductor package having a stacked wafer level package and method for fabricating the same: A semiconductor package having a stacked wafer level structure includes a base substrate; a semiconductor chip; a redistribution pattern; and a second insulation layer pattern. The base substrate having a chip region and a peripheral region disposed at the periphery of the chip region. The semiconductor chip is disposed over... Agent: Hynix Semiconductor Inc.

20110127674 - Layer structure for electrical contacting of semiconductor components: A layer structure for the electrical contacting of a semiconductor component having integrated circuit elements and integrated connecting lines for the circuit elements, which is suitable in particular for use in a chemically aggressive environment and at high temperatures, i.e., in so-called “harsh environments,” and is simple to implement. This... Agent:

20110127673 - Wiring structure and method: Disclosed is an improved integrated circuit wiring structure configured to prevent migration of wiring metal ions (e.g., copper (Cu+) ions in the case of a copper interconnect scheme) onto the surface of an interlayer dielectric material at an interface between the interlayer dielectric material and an insulating cap layer. Specifically,... Agent: International Business Machines Corporation

20110127678 - Integrated circuit packaging system with embedded circuitry and post: An integrated circuit packaging system includes: an integrated circuit device; a conductive post adjacent the integrated circuit device, the conductive post with a contact surface having characteristics of a shaped platform removed; and an encapsulant around the conductive post and the integrated circuit device with the conductive post extending through... Agent:

20110127675 - Laminate electronic device: A method of manufacturing a laminate electronic device is disclosed. One embodiment provides a carrier, the carrier defining a first main surface and a second main surface opposite to the first main surface. The carrier has a recess pattern formed in the first main surface. A first semiconductor chip is... Agent: Infineon Technologies Ag

20110127676 - Lead pin for semiconductor package and semiconductor package: Disclosed is a lead pin for a semiconductor package. The lead pin includes a coupling pin inserted into a hole formed in an external device, a head portion disposed at one end of the coupling pin, and a step portion formed in a stepped manner between the coupling pin and... Agent: Samsung Electro-mechanics Co., Ltd.

20110127677 - Method of manufacturing semiconductor device, and semiconductor device: A semiconductor device including a substrate, and an insulating film formed over the substrate, wherein the insulating film has a first contact having a rectangular geometry in a plan view, and second to fifth contacts provided respectively adjacent to the individual edges of the rectangular first contact, formed therein.... Agent: Renesas Electronics Corporation

20110127679 - Stacked structure of semiconductor packages including through-silicon via and inter-package connector, and method of fabricating the same: A stacked structure of semiconductor packages includes an upper semiconductor package, a lower semiconductor package and inter-package connectors. The upper semiconductor package includes an upper package substrate, a plurality of upper semiconductor chips stacked on the upper package substrate, and conductive upper connection lands formed on a bottom surface of... Agent:

20110127680 - Spacer, and its manufacturing method: Provided are a spacer capable of avoiding a poor connection due to the suction of solder when the clearance width between a soldered semiconductor device and a printed circuit board is made constant, and a manufacturing method for the spacer. The spacer includes an electrically insulating base member, and at... Agent: Nec Corporation

20110127681 - Chip package and fabrication method thereof: A chip package and a fabrication method thereof are provided according to an embodiment of the invention. The chip package includes a semiconductor substrate containing a chip and having a device area and a peripheral bonding pad area. A plurality of conductive pads is disposed at the peripheral bonding pad... Agent: