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Active solid-state devices (e.g., transistors, solid-state diodes) April category listing, related patent applications 04/11

20110095256 - Memory cells: In some embodiments, a memory cell includes a transistor gate spaced from a channel region by gate dielectric; a source region on one side of the channel region; and a drain region on an opposing side of the channel region from the source region. The channel region has phase change... Agent: Micron Technology, Inc.

20110095255 - Memory device and fabrication process thereof: A memory device that includes a resistive-change memory element, the memory device includes: a first memory element that includes a first resistive-change layer and a first electrode connected to the first resistive-change layer; and a second memory element that includes a second resistive-change layer and a second electrode connected to... Agent: Sony Corporation

20110095257 - Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the same: Memory cells, and methods of forming such memory cells, are provided that include a steering element coupled to a carbon-based reversible resistivity switching material that has an increased resistivity, and a switching current that is less than a maximum current capability of the steering element used to control current flow... Agent:

20110095258 - Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the same: Memory cells, and methods of forming such memory cells, are provided that include a steering element coupled to a carbon-based reversible resistivity switching material that has an increased resistivity, and a switching current that is less than a maximum current capability of the steering element used to control current flow... Agent:

20110095259 - Resistance changing device and method for fabricating the same: A resistance changing device includes a resistive layer of a hetero structure interposed between a lower electrode and an upper electrode, and including a plurality of resistive material layers, each having a different resistivity, stacked therein, wherein resistivities of the resistive material layers decrease from the lower electrode toward the... Agent:

20110095261 - Flexible devices including semiconductor nanocrystals, arrays, and methods: The present invention relates to flexible devices including semiconductor nanocrystals, arrays including such devices, systems including the foregoing, and related methods. In one embodiment, a flexible light-emitting device includes a flexible substrate including a first electrode, an emissive layer comprising semiconductor nanocrystals disposed over the substrate, and second electrode disposed... Agent:

20110095260 - Light emitting device: A light emitting device may include a semiconductor light emitting diode which may include a first nitride semiconductor layer doped as an n-type, a second nitride semiconductor layer doped as a p-type, and a first active layer provided between the first and second nitride semiconductor layers, and a nano light... Agent: Samsung Electronics Co., Ltd.

20110095263 - Light emitting device and light emitting device package: A light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system are disclosed. The light emitting device may include a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first and second conductive semiconductor layers.... Agent:

20110095265 - Nitride semiconductor light emitting device: where X is the distance between ends of the p-side pad electrode and the n-side pad electrode, Y is the distance between the end of the p-side pad electrode and the periphery of the translucent electrode, L is the length of the translucent electrode on the line connecting the centroids... Agent: Nichia Corporation

20110095262 - Semiconductor light emission device and manufacturing method the same: A semiconductor light emission device is disclosed. The semiconductor light emission device includes: a substrate; a current concentration preventing pattern formed in a mesh net shape on the substrate; an n-type clad layer formed on the substrate loaded with the current concentration preventing pattern; an active layer and a p-type... Agent:

20110095264 - Semiconductor light emitting device and method for manufacturing the same: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive semiconductor layer, a lower super lattice layer under the first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive super lattice layer on the active layer, and a... Agent:

20110095266 - Photodetector and method for the production thereof: X-ray radiation is converted by a photodetector into an electric charge. Nanoparticles are incorporated into the active organic layer of the photodetector.... Agent:

20110095267 - Nanowire stress sensors and stress sensor integrated circuits, design structures for a stress sensor integrated circuit, and related methods: Stress sensors and stress sensor integrated circuits using one or more nanowire field effect transistors as stress-sensitive elements, as well as design structures for a stress sensor integrated circuit embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit, and related methods thereof. The stress sensors... Agent: International Business Machines Corporation

20110095268 - Transistor and flat panel display including thin film transistor: A transistor includes at least three terminals comprising a gate electrode, a source electrode and a drain electrode, an insulating layer disposed on a substrate, and a semiconductor layer disposed on the substrate, wherein a current which flows between the source electrode and the drain electrode is controlled by application... Agent: Samsung Electronics Co., Ltd.

20110095273 - Deuterated compounds for luminescent applications: This invention relates to deuterated compounds that are useful in electroluminescent applications. It also relates to electronic devices in which the active layer includes such a deuterated compound.... Agent: E. I. Du Pont De Nemours And Company

20110095276 - Display unit: A display unit that secures favorable display performance and has a simple structure is provided. The display unit includes a multilayer structure in which an organic light emitting device group respectively having a plurality of organic light emitting devices that emits cyan light and a plurality of organic light emitting... Agent: Sony Corporation

20110095269 - Electroactive materials: Ar1 may independently be phenylene, substituted phenylene, naphthylene, or substituted naphthylene. Ar2 is the same or different at each occurrence and is an aryl group. M is the same or different at each occurrence and is a conjugated moiety. T1 and T2 are independently the same or different at each... Agent: E. I. Du Pont De Nemours And Company

20110095270 - Electroactive materials: 1

20110095283 - Fluorine-bridged associations for optoelectronic applications: The present invention relates to a fluorine-bridged associate consisting of an oligomer or polymer containing fluorine radicals which are bonded to the oligomer or polymer backbone, and up to three types of functional units in the backbone which differ with respect to function and are selected from the group consisting... Agent: Merck Patent Gmbh

20110095284 - Fused polycyclic aromatic compound and organic light emitting device using the compound: Provided are a novel fused polycyclic aromatic compound having a fluoranthene skeleton and an organic light emitting device having high efficiency and high durability. The organic light emitting device includes a fused polycyclic aromatic compound represented by the following general formula [1] or [2], and the organic light emitting device... Agent: Canon Kabushiki Kaisha

20110095271 - Hybrid organic light emitting device: A hybrid organic light-emitting device comprises an anode, a cathode, respective adjacent hole and electron transport layers and an emissive layer therebetween. The electron transport layer comprises a metal oxide as a result of which the cathode may be formed of a transparent conductive oxide and the anode of a... Agent:

20110095281 - Materials for organic electroluminescent devices: The present invention relates to transition-metal complexes of the general formula I or II, in particular as emitter molecules in organic electronic devices, to a layer and an electronic device which comprise the compounds according to the invention, and to a process for the preparation of the compounds according to... Agent: Merck Patent Gmbh

20110095280 - Novel polymers having low polydispersity: The present invention relates to novel polymers which comprise one or more recurring units selected from spirobifluorene, indenofluorene, phenanthrene, dihydrophenanthrene, dihydropyrene, tetrahydropyrene and dihydrobenzoxepine derivatives and have low polydispersity and a high molecular weight, to a process for the preparation thereof, to blends and formulations comprising these polymers, and to... Agent:

20110095279 - Organic electroluminescence display apparatus: Provided is an organic electroluminescence display apparatus capable of reducing a chromaticity difference caused by light emission from an organic layer including an emission layer having the same color, which is continuously formed over two sub-pixels included in a pixel. The organic electroluminescence display apparatus includes: a substrate; and multiple... Agent: Canon Kabushiki Kaisha

20110095278 - Organic electroluminescence element, display device and lighting device: In an organic electroluminescence element which incorporates a substrate having thereon an anode and a cathode and which incorporates a plurality of organic layers between the aforesaid anode and cathode, wherein at least one of the aforesaid organic layers is a first organic layer incorporating a compound having at most... Agent: Konica Minolta Holdings, Inc.

20110095282 - Organic electroluminescent device comprising triazine derivatives: The invention relates to organic electroluminescent devices which comprise triazine derivatives as the electron transport material.... Agent: Merck Patent Gmbh

20110095277 - Organic electronic devices and methods for manufacturing the same: The present invention discloses a method for manufacturing an Organic-Electronic (OE) Device. The method comprises providing at least one lower electrode onto a substrate; providing at least one lower organic layer onto the lower electrode; providing at least one upper electrode onto the lower organic layer to obtain an OE... Agent:

20110095275 - Organic electronic devices, compositions, and methods: Organic electronic devices, compositions, and methods are disclosed that employ electrically conductive nanowires and conducting materials such as conjugated polymers such as sulfonated regioregular polythiophenes which provide high device performance such as good solar cell efficiency. Devices requiring transparent conductors that are resilient to physical stresses can be fabricated, with... Agent:

20110095274 - Organic light-emitting display device and method of manufacturing the same: An organic light-emitting display device, which may be configured to prevent moisture or oxygen from penetrating the organic light-emitting display device from the outside is disclosed. An organic light-emitting display device, which is easily applied to a large display device and/or may be easily mass produced is further disclosed. Additionally... Agent: Samsung Mobile Display Co., Ltd.

20110095272 - Organic memory array with ferroelectric field-effect transistor pixels: An organic non-volatile memory array including multiple pixels and associated signal lines that are disposed on and between a substrate, a single ferroelectric dielectric layer, and a single organic dielectric layer, where each pixel includes a ferroelectric field-effect transistor (FeFET) and at least one organic thin-film field effect transistor (FET)... Agent: Palo Alto Research Center Incorporated

20110095285 - Display device and thin film transistor array substrate and thin film transistor thereof: A display device including a thin film transistor array substrate, transparent electrode substrate and a display medium layer disposed therebetween is provided. The thin film transistor array substrate includes a plurality of thin film transistors with an oxide semiconductor layer respectively. In each thin film transistor, a gate electrode and... Agent: Prime View International Co., Ltd.

20110095287 - Nonvolatile memory device and nonvolatile memory array including the same: A nonvolatile memory device having self-presence diode characteristics, and/or a nonvolatile memory array including the nonvolatile memory device may be provided. The nonvolatile memory device may include a lower electrode, a first semiconductor oxide layer on the lower electrode, a second semiconductor oxide layer on the first semiconductor oxide layer,... Agent:

20110095288 - Thin film transistor and display device: There is provided a thin film transistor capable of suppressing generation of a leak current in an oxide semiconductor film. A thin film transistor 1 includes a gate electrode 12 on a substrate 11, and includes a gate insulating film 13 so as to cover the gate electrode 12 and... Agent: Sony Corporation

20110095286 - Thin film transistor, method of manufacturing the thin film transistor and organic light emitting display device having the thin film transistor: A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT and an organic light emitting display device having the TFT. In one embodiment, a TFT includes a first gate electrode formed on a substrate. A source electrode is formed to be... Agent: Samsung Mobile Display Co., Ltd.

20110095290 - Display panel: A display panel includes an insulation substrate having a display area and a peripheral area, wires disposed on the insulation substrate in the display area, first and second testing lines disposed on the insulation substrate and aligned substantially parallel to each other, and a diode unit disposed between the wires... Agent: Samsung Electronics Co., Ltd.

20110095289 - Laminated chips package, semiconductor substrate and method of manufacturing the laminated chips package: In a laminated chip package, a plurality of semiconductor plates each having a semiconductor device and a wiring electrode connected to the semiconductor device are laminated. On a side surface for wiring of the laminated chip package, an end face of an inner electrode for examination formed inside the side... Agent: Sae Magnetics (h.k.) Ltd.

20110095291 - Lateral growth semiconductor method and devices: A method of growing high quality crystalline films on lattice-mismatched or amorphous layers is presented allowing semiconductor materials that would normally be subject to high stress and cracking to be employed allowing cost reductions and/or performance improvements in devices to be obtained. Catalysis of the growth of these films is... Agent:

20110095292 - Silicon nitride film, and semiconductor device and method of manufacturing the same: An object of the present invention is to apply an insulating film of cure and high quality that is suitably applicable as gate insulating film and protective film to a technique that the insulating film is formed on the glass substrate under a temperature of strain point or lower, and... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110095297 - Display device and semiconductor device: An object is to provide a display device with a high aperture ratio or a semiconductor device in which the area of an element is large. A channel formation region of a TFT with a multi-gate structure is provided under a wiring that is provided between adjacent pixel electrodes (or... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110095298 - Electronic paper: An object of the present invention is to increase the resistance of electronic paper to external stress. The resistance to external stress is increased by providing an element formation layer, which includes an integrated circuit portion, a first electrode, a second electrode, and a charged particle-containing layer, between a first... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110095296 - Thin film transistor and organic light emitting display device having the same: A thin film transistor (TFT) and an organic light emitting display device having the same are disclosed. In one embodiment, a TFT includes a gate electrode formed on a substrate. A gate insulating layer is formed on the substrate having the gate electrode. An active layer is formed on the... Agent: Samsung Mobile Display Co. Ltd.

20110095293 - Thin film transistor array panel: A thin film transistor array panel includes: a substrate, a gate line disposed on the substrate, a data line intersecting the gate line, a drain electrode separated from the data line a first insulating layer covering the data line, a color filter disposed on the first insulating layer, a second... Agent:

20110095294 - Thin film transistor array panel and method of manufacturing the same: A thin film transistor array panel includes: an insulation substrate; a gate line disposed on the insulation substrate and including a compensation pattern protruding from the gate line; a first data line and a second data line both intersecting the gate line; a first thin film transistor connected to the... Agent: Samsung Electronics Co., Ltd.

20110095295 - Thin film transistor substrate and method for fabricating the same: The present invention relates to a thin film transistor substrate and method for fabricating the same which can secure an alignment margin and reduce the number of mask steps. A thin transistor substrate according to the present invention includes a gate line and a data line crossing each other to... Agent:

20110095299 - Display device and method for manufacturing display device: Disclosed herein is a display device, including: a substrate; a circuit part configured to include a drive element formed over the substrate; a planarization insulating layer configured to be formed on the circuit part; an electrically-conductive layer configured to be formed on the planarization insulating layer and include a plurality... Agent: Sony Corporation

20110095300 - Thin film transistor array panel and method for manufacturing the same: A manufacturing method of a thin film transistor array panel includes forming a gate line on a substrate and a gate insulating layer on the gate line, forming a semiconductor on the gate insulating layer, forming a first data line and a first drain electrode on the semiconductor, forming a... Agent: Samsung Electronics Co., Ltd.

20110095304 - Process for forming an interface between silicon carbide and silicon oxide with low density of states: An embodiment of a process for forming an interface between a silicon carbide (SiC) layer and a silicon oxide (SiO2) layer of a structure designed to conduct current is disclosed. A first epitaxial layer having a first doping level is homo-epitaxially grown on a substrate. The homo-epitaxial growth is preceded... Agent: Stmicroelectronics S.r.l.

20110095305 - Semiconductor device: The semiconductor device includes: a substrate 2 and a drift layer 3a, which are made of a wide-bandgap semiconductor; a p-type well 4a and a first n-type doped region 5, which are defined in the drift layer; a source electrode 5, which is electrically connected to the first n-type doped... Agent:

20110095302 - Semiconductor device and manufacturing method thereof: An object is to provide a semiconductor device and its manufacturing method in which delay in switching and non-uniform operations are prevented and in which stresses occurring in trench regions are alleviated as much as possible. A gate electrode in a gate trench is formed of a polysilicon layer and... Agent: Mitsubishi Electric Corporation

20110095303 - Semiconductor device and method for manufacturing the same: A semiconductor device includes a semiconductor substrate, a cell region, an outer peripheral region, a field plate, an outermost peripheral ring, outer peripheral region layer, an insulator film, and a Zener diode. The semiconductor substrate has a superjunction structure. The outer peripheral region is disposed at an outer periphery of... Agent: Denso Corporation

20110095301 - Silicon carbide semiconductor device: There was a problem that it was difficult to manufacture silicon carbide semiconductor devices with suppressed variations in characteristics without increasing the number of process steps. A silicon carbide semiconductor device according to the present invention includes an N type SiC substrate and an N type SiC epitaxial layer as... Agent: Mitsubishi Electric Corporation

20110095306 - Light emitting device, light emitting device package and lighting system: Disclosed are a light emitting device, a light emitting device package and a lighting system. The light emitting device of the embodiment includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first and second conductive semiconductor layers;... Agent:

20110095307 - Light emitting device, light emitting device package and lighting system: Disclosed are a light emitting device, a light emitting device package and a lighting system. The light emitting device of the embodiment includes a light emitting structure including a first conductive semiconductor layer, an active layer over the first conductive semiconductor layer, and a second conductive semiconductor layer over the... Agent:

20110095308 - Process for forming an electroactive layer: There is provided a process for forming a layer of electroactive material having a substantially flat profile. The process includes the steps of providing a workpiece having at least one active area; depositing a liquid composition including the electroactive material onto the workpiece in the active area, to form a... Agent: E. I. Du Pont De Nemours And Company

20110095309 - Semiconductor device: Semiconductor devices including a light emitting layer, and at least one surface plasmon metal layer in contact with the light emitting layer are provided. The light emitting layer includes an active layer having a first band gap, and one or more barrier layers having a second band gap. The first... Agent: University Of Seoul Industry Cooperation Foundation

20110095311 - Configuration of multiple led module: A configuration of multiple LED modules having a plurality of LED modules that each contain a carrier that has a first main area, a second main area and at least one semiconductor layer. The first main area has a planar configuration. The LED modules also include a plurality of LED... Agent: Osram Gmbh

20110095310 - Semiconductor light emitting module and method of manufacturing the same: Provided are a semiconductor light emitting module and a method of manufacturing the same, which allow achieving high luminance light emission as well as lightweight and compact features. In a semiconductor light emitting module (101), a projecting portion (202) serving as a reflecting member is formed on a metal thin... Agent: Shimane Prefectural Government

20110095312 - Semiconductor device and method of manufacturing the same: The measures taken are: A pixel capacitor is formed between an electrode comprising anodic capable material over an organic resin film, an anodic oxide film of the electrode and a pixel electrode above. Since the anodic oxide film is anodically oxidized by applied voltage per unit time at 15 V/min,... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110095313 - Light emitting diode and manufacturing method thereof: A method for manufacturing light-emitting diode (LED) first provides a substrate, then a protrusive patterned layer is formed on the substrate. The protrusive patterned layer exposes portions of the substrate, and the exposed portions are defined as a plurality of exposed regions. Next, a plurality of island semiconductor multi-layer is... Agent:

20110095328 - Close proximity collimator for led: A method for the manufacture of a light emitting device is provided. The method comprises the steps of: providing a substrate (102) on which at least one light emitting diode (101) is arranged and; arranging a collimator (103), at least partly laterally surrounding said at least one light emitting diode,... Agent: Koninklijke Philips Electronics N.v.

20110095327 - Group iii nitride semiconductor light emitting device and production method thereof, and lamp: A group III nitride semiconductor light emitting device including an LED structure formed on top of a single crystal, base layer (103) formed on top of a substrate (101) including a principal plane (10) having a flat surface (11) configured from a (0001) C plane, and a plurality of convex... Agent: Showa Denko K.k.

20110095316 - Led package structure: An LED package structure includes an LED die, a lead frame and a housing connecting to the lead frame. The LED die is located on a surface of the lead frame. The housing includes an inner face surrounding the LED die. The inner face has a bottom edge connected to... Agent: Advanced Optoelectronic Technology, Inc.

20110095318 - Light emitting apparatus: A light emitting apparatus includes a substrate, at least one LED (light-emitting diode) die, a sealant, a cover sheet and a protecting material. The LED die is disposed on the substrate. The sealant covers the LED die and has a top surface and a side surface. The cover sheet is... Agent: Gio Optoelectronics Corp.

20110095320 - Light emitting device and light emitting device package: Disclosed are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure including a second conductive semiconductor layer, an active layer over the second conductive semiconductor layer, and a first conductive semiconductor layer over the active layer dielectric... Agent:

20110095322 - Light emitting device and light emitting device package: Provided are a light emitting device and a light emitting device package. The light emitting device comprises a light emitting structure comprising a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer; a... Agent: Lg Innotek Co., Ltd.

20110095314 - Light emitting device and method for enhancing light extraction thereof: A method for enhancing light extraction of a light emitting device is disclosed. The method includes the steps of: providing a site layer on the light emitting device; placing a protection layer on the site layer; forming an array of pores through the protection layer and the site layer; and... Agent: Walsin Lihwa Corporation

20110095321 - Light emitting device package and lighting system: A light emitting device (LED) package includes a submount and a light emitting chip. The submount has a chip region and a supporting region over which the chip is mounted, and an encapsulating material and fluorescent material are formed over the chip. The coverage area of encapsulating and fluorescent materials... Agent:

20110095319 - Light emitting device package, lighting module and lighting system: Disclosed are a light emitting device package and a lighting system. The light emitting device package includes a semiconductor light emitting device, a first encapsulant over the semiconductor light emitting device, and a second encapsulant having a refractive index greater than a refractive index of the first encapsulant over the... Agent:

20110095323 - Light emitting device, light emitting device package, and lighting system: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a first semiconductor layer comprising a plurality of vacant space parts, an active layer on the first semiconductor layer, and a second conductive type semiconductor layer on the active layer.... Agent: Lg Innotek Co., Ltd.

20110095317 - Light emitting device, light emitting device package, and lighting system including the same: Provided are a light emitting device, a light emitting device package, and a lighting system including the same. The light emitting device includes a second electrode layerelectrode, a light emitting structure, a texture, and a current spreading layer. The light emitting structure is on second electrode layerelectrode, and includes a... Agent: Lg Innotek Co., Ltd.

20110095324 - Method for fabricating micro and nano structures: A method of forming an array of selectively shaped optical elements on a substrate, the method including the steps of providing the substrate, the substrate having an optical layer placed thereon; placing a layer of particles on the optical layer; performing an etching cycle. The cycle includes the steps of:... Agent: Agency For Science, Technology And Research

20110095325 - Optoelectronic semiconductor device and manufacturing method thereof: An embodiment of the invention discloses an optoelectronic semiconductor device comprising a semiconductor system capable of performing a conversion between light energy and electrical energy; an interfacial layer formed on at least two surfaces of the semiconductor system; an electrical conductor; and an electrical connector electrically connecting the semiconductor system... Agent: Epistar Corporation

20110095315 - Package substrate for optical element and method of manufacturing the same: Disclosed herein is a package substrate for optical elements, including: a conductive substrate including an insulation layer formed thereon; a circuit layer which is formed on the conductive substrate 11 and has a cavity space therein; electrode pads which are formed on the conductive substrate and which are spaced apart... Agent:

20110095326 - Semiconductor light emitting device: This invention discloses a light emitting semiconductor device including a light-emitting structure and an external optical element. The optical element couples to the light-emitting structure circumferentially. In addition, the refractive index of the external optical element is greater than or about the same as that of a transparent substrate of... Agent: Epistar Corporation

20110095331 - Group-iii nitride semiconductor light-emitting device, method for manufacturing the same, and lamp: Provided is a group-III nitride semiconductor light-emitting device which has a high level of crystallinity and superior internal quantum efficiency and which is capable of enabling acquisition of high level light emission output, and a manufacturing method thereof, and a lamp. An AlN seed layer composed of a group-III nitride... Agent: Showa Denko K.k.

20110095329 - Light emitting device package: Provided are a light emitting device package and a lighting system. The light emitting device package includes a light emitting device chip, at least one wire, and an encapsulating material. The light emitting device chip includes a first conductive type semiconductor layer, a second conductive type semiconductor layer on the... Agent:

20110095330 - Optical semiconductor device, method for manufacturing optical semiconductor device, and method for manufacturing optical semiconductor apparatus: A method for manufacturing a high quality optical semiconductor device includes: (a) preparing a growth substrate; (b) forming a semiconductor layer on the growth substrate; (c) forming a metal support made of copper on the semiconductor layer by plating; (d) separating the growth substrate from the semiconductor layer to remove... Agent: Stanley Electric Co., Ltd.

20110095332 - Light emitting device, light emitting device package, and lighting system: A light emitting device includes a first electrode, a first semiconductor layer, an active layer; a second semiconductor layer, and a second electrode. A current blocking layer is formed on a side surface of and has a width provided within the first semiconductor layer. The thickness and width of the... Agent:

20110095333 - High-drive current mosfet: A method of forming a semiconductor device having an asymmetrical source and drain. In one embodiment, the method includes forming a gate structure on a first portion of the substrate having a well of a first conductivity. A source region of a second conductivity and drain region of the second... Agent: International Business Machines Corporation

20110095334 - Barrier photodetector with planar top layer: A barrier-type photo-detector is provided with a Barrier between first and second layers. One of the layers is delineated into pixels without fully removing the non-pixel portions of the delineated layer. Delineation may be accomplished through material modification techniques such as ion damage, selective doping, ion induced disordering or layer... Agent: Lockheed Martin Corporation

20110095335 - Nitride semiconductor device: A high breakdown voltage GaN-based transistor is provided on a silicon substrate. A nitride semiconductor device including: a silicon substrate, a SiO2 layer stacked on the silicon substrate and having a film thickness 100 nm or more; a silicon layer stacked on the SiO2 layer; a buffer layer stacked on... Agent: Panasonic Corporation

20110095336 - Lateral hemt and method for the production of a lateral hemt: In one embodiment a lateral HEMT has a first layer, the first layer including a semiconducting material, and a second layer, the second layer including a semiconducting material and being at least partially arranged on the first layer. The lateral HEMT further has a passivation layer and a drift region,... Agent: Infineon Technologies Austria Ag

20110095337 - Semiconductor device and method of manufacturing the same: A semiconductor device reduces the on-resistance and, at the same time, raises the breakdown voltage. The drain electrode 20 of the semiconductor device runs through cap layer 13 and electron supply layer 12 and gets to a position lower than two-dimensional electron gas layer 14 in channel layer 11. Thus,... Agent:

20110095338 - Methods of forming pillars for memory cells using sequential sidewall patterning: The present invention provides apparatus, methods, and systems for fabricating memory structures methods of forming pillars for memory cells using sequential sidewall patterning. The invention includes forming first features from a first template layer disposed above a memory layer stack; forming first sidewall spacers adjacent the first features; forming second... Agent: Sandisk 3d LLC

20110095343 - Bi-layer nfet embedded stressor element and integration to enhance drive current: A semiconductor structure including a bi-layer nFET embedded stressor element is disclosed. The bi-layer nFET embedded stressor element can be integrated into any CMOS process flow. The bi-layer nFET embedded stressor element includes an implant damaged free first layer of a first epitaxy semiconductor material having a lattice constant that... Agent: International Business Machines Corporation

20110095344 - Method of improving minority lifetime in silicon channel and products thereof: Performance of field effect transistors and other channel dependent devices formed on a monocrystalline substrate is improved by carrying out a high temperature anneal in a nitrogen releasing atmosphere while the substrate is coated by a sacrificial oxide coating containing easily diffusible atoms that can form negatively charged ions and... Agent:

20110095341 - Methods for protecting gate stacks during fabrication of semiconductor devices and semiconductor devices fabricated from such methods: Methods for protecting gate stacks during fabrication of semiconductor devices and semiconductor devices fabricated from such methods are provided. Methods for fabricating a semiconductor device include providing a semiconductor substrate having an active region and a shallow trench isolation (STI) region. Epitaxial layer is formed on the active region to... Agent: Globalfoundries Inc.

20110095345 - Methods of fabricating field effect transistors having protruded active regions: Provided are a field effect transistor, a method of manufacturing the same, and an electronic device including the field effect transistor. The field effect transistor may have a structure in which a double gate field effect transistor and a recess channel array transistor are formed in a single transistor in... Agent:

20110095342 - Printed material constrained by well structures and devices including same: A first patterned contact layer, for example a gate electrode, is formed over an insulative substrate. Insulating and functional layers are formed at least over the first patterned contact layer. A second patterned contact layer, for example source/drain electrodes, is formed over the functional layer. Insulative material is then selectively... Agent: Palo Alto Research Center Incorporated

20110095339 - Semiconductor device and method for manufacturing the same: A semiconductor device has at least two main carbon-rich regions and two additional carbon-rich regions. The main carbon-rich regions are separately located in a substrate so that a channel region is located between them. The additional carbon-rich regions are respectively located underneath the main carbon-rich regions. The carbon concentrations is... Agent:

20110095346 - Semiconductor device and method of fabricating same: There are disclosed TFTs that have excellent characteristics and can be fabricated with a high yield. The TFTs are fabricated, using an active layer crystallized by making use of nickel. Gate electrodes are comprising tantalum. Phosphorus is introduced into source/drain regions. Then, a heat treatment is performed to getter nickel... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110095340 - Soft error reduction circuit and method: In some embodiments, complementary charge-collecting diffusions (transistor diffusions, e.g., drain or source areas) are disposed close to each other. In some embodiments, dummy (“off”) transistors are incorporated to bring complementary diffusions (diffusions of the same charge type and having complementary digital logic levels) closer to each other than otherwise might... Agent:

20110095347 - Vertical diode using silicon formed by selective epitaxial growth: Some embodiments relate to an apparatus that exhibits vertical diode activity to occur between a semiconductive body and an epitaxial film that is disposed over a doping region of the semiconductive body. Some embodiments include an apparatus that causes both vertical and lateral diode activity. Some embodiments include a gated... Agent: Infineon Technologies Ag

20110095348 - Semiconductor device and method of manufacturing the same: Technique of improving a manufacturing yield of a semiconductor device including a non-volatile memory cell in a split-gate structure is provided. A select gate electrode of a CG shunt portion is formed so that a second height d2 from the main surface of the semiconductor substrate of the select gate... Agent: Renesas Electronics Corporation

20110095349 - Semiconductor device and method of manufacturing same: A technique for enhancing the performance of a memory- and logic-equipped semiconductor device is provided. The semiconductor device comprises a semiconductor substrate (1), an insulating layer (19) on the semiconductor substrate (1), a plurality of contact plugs (16, 66) in the insulating layer (19), and an insulating layer (30) where... Agent: Renesas Electronics Corporation

20110095350 - Vertical type integrated circuit devices, memory devices, and methods of fabricating the same: A vertical type integrated circuit device includes a substrate and a pillar vertically protruding from the substrate. The pillar includes a lower impurity region and an upper impurity region therein and a vertical channel region therebetween. A portion of the pillar including the lower impurity region therein includes a mesa... Agent: Samsung Electronics Co., Ltd.

20110095351 - Semiconductor devices and methods of fabricating the same: A semiconductor device includes a device isolation layer in a semiconductor substrate, an active region defined by the device isolation layer, the active region including a main surface and a recess region including a bottom surface that is lower than the main surface, and a gate electrode formed over the... Agent: Samsung Electronics Co., Ltd.

20110095352 - Flash memory device and fabrication method thereof: The present invention relates to a flash memory device and a fabrication method thereof. In an embodiment, a flash memory device includes a tunnel insulating film and a floating gate laminated over an active region of a semiconductor substrate, an isolation layer formed in a field region of the semiconductor... Agent: Hynix Semiconductor Inc.

20110095356 - Nonvolatile memory devices: Nonvolatile memory devices and methods of making the same are described. A nonvolatile memory device includes a string selection transistor, a plurality of memory cell transistors, and a ground selection transistor electrically connected in series to the string selection transistor and to the pluralities of memory cell transistors. Each of... Agent: Samsung Electronics Co., Ltd.

20110095354 - Nonvolatile semiconductor memory device and manufacturing method thereof: A nonvolatile semiconductor memory device is provided in such a manner that a semiconductor layer is formed over a substrate, a charge accumulating layer is formed over the semiconductor layer with a first insulating layer interposed therebetween, and a gate electrode is provided over the charge accumulating layer with a... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110095353 - One-transistor cell semiconductor on insulator random access memory: Silicon-oxide-nitride-oxide-silicon SONOS-type devices (or BE-SONOS) fabricated in Silicon-On-Insulator (SOI) technology for nonvolatile implementations. An ultra-thin tunnel oxide can be implemented providing for very fast program/erase operations, supported by refresh operations as used in classical DRAM technology. The memory arrays are arranged in divided bit line architectures. A gate injection, DRAM... Agent: Macronix International Co., Ltd.

20110095357 - Semiconductor constructions, methods of forming transistor gates, and methods of forming nand cell units: Some embodiments include methods of forming charge storage transistor gates and standard FET gates in which common processing is utilized for fabrication of at least some portions of the different types of gates. FET and charge storage transistor gate stacks may be formed. The gate stacks may each include a... Agent: Micron Technology, Inc.

20110095355 - Split charge storage node outer spacer process: Memory cells containing two split sub-lithographic charge storage nodes on a semiconductor substrate and methods for making the memory cells are provided. The methods can involve forming two split sub-lithographic charge storage nodes by using spacer formation techniques. By removing an exposed portion of a fist poly layer between sloping... Agent: Spansion LLC

20110095358 - Double-sided semiconductor structure and method for manufacturing same: A semiconductor structure including a substrate of semiconductor material of a first type of conductivity; a first semiconductor layer set in direct electrical contact with the substrate on a first side of the substrate; a second semiconductor layer set in direct electrical contact with the substrate on a second side... Agent: Stmicrolectronics S.r.l.

20110095359 - Field boosted metal-oxide-semiconductor field effect transistor: A trench metal-oxide-semiconductor field effect transistor (TMOSFET) includes a plurality of mesas disposed between a plurality of gate regions. Each mesa includes a drift region and a body region. The width of the mesa is in the order of quantum well dimension at the interface between the gate insulator regions... Agent: Vishay-siliconix

20110095362 - Field plate trench transistor and method for producing it: A field plate trench transistor having a semiconductor body. In one embodiment the semiconductor has a trench structure and an electrode structure embedded in the trench structure. The electrode structure being electrically insulated from the semiconductor body by an insulation structure and having a gate electrode structure and a field... Agent: Infineon Technologies Austria Ag

20110095360 - Method and device including transistor component having a field electrode: A transistor component and method of forming a transistor component. One embodiment provides a semiconductor arrangement including a semiconductor body having a at least one first trench, a first field electrode arranged in the lower trench section of the at least one first trench and being insulated from the semiconductor... Agent: Infineon Technologies Austria Ag

20110095361 - Multiple layer barrier metal for device component formed in contact trench: A semiconductor device formed on a semiconductor substrate may include a component formed in a contact trench located in an active cell region. The component may comprise a barrier metal deposited on a bottom and portions of sidewalls of the contact trench and a tungsten plug deposited in a remaining... Agent: Alpha & Omega Semiconductor, Inc.

20110095363 - Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same: Semiconductor structures and devices including strained material layers having impurity-free zones, and methods for fabricating same. Certain regions of the strained material layers are kept free of impurities that can interdiffuse from adjacent portions of the semiconductor. When impurities are present in certain regions of the strained material layers, there... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110095364 - Semiconductor device and method: A semiconductor device and method is disclosed. One embodiment provides an active region in a semiconductor substrate, including a first terminal region and a second terminal region. wherein the active region is interrupted by an inactive region, wherein an electrical power dissipation in the inactive region is zero or smaller... Agent: Infineon Technologies Ag

20110095365 - Power transistor with improved high-side operating characteristics and reduced resistance and related apparatus and method: A method includes forming a transistor device on a first side of a semiconductor-on-insulator structure. The semiconductor-on-insulator structure includes a substrate, a dielectric layer, and a buried layer between the substrate and the dielectric layer. The method also includes forming a conductive plug through the semiconductor-on-insulator structure. The conductive plug... Agent: National Semiconductor Corporation

20110095366 - Forming an extremely thin semiconductor-on-insulator (etsoi) layer: Solutions for forming an extremely thin semiconductor-on-insulator (ETSOI) layer are disclosed. In one embodiment, a method includes providing a wafer including a plurality of semiconductor-on-insulator (SOI) layer regions separated by at least one shallow trench isolation (STI); amorphizing the plurality of SOI layer regions by implanting the plurality of SOI... Agent: International Business Machines Corporation

20110095367 - Esd/antenna diodes for through-silicon vias: Roughly described, an antenna diode is formed at least partially within the exclusion zone around a TSV, and is connected to the TSV by way of a metal 1 layer conductor at the same time that the TSV is connected to either the gate poly or a diffusion region of... Agent: Synopsys, Inc.

20110095368 - Electrostatic discharge protection device: An electrostatic discharge protection device is disclosed. The electrostatic discharge protection device preferably includes a first transistor, a second transistor, and an electrostatic discharge clamping circuit. The first transistor includes a first drain electrically connected to an input/output pin of a chip, a first source electrically connected to a first... Agent:

20110095369 - Semiconductor device: a second semiconductor region. The source region includes a source layer of the first conductivity type, a first back gate layer of the second conductivity type, and a second back gate layer of the second conductivity type. The first back gate layer is adjacent to the second semiconductor region on... Agent: Kabushiki Kaisha Toshiba

20110095370 - Wordline resistance reduction method and structure in an integrated circuit memory device: Methods and structures for reducing resistance in wordlines of an integrated circuit memory device are disclosed. In one embodiment, the method includes forming multiple columns of polycrystalline silicon for respective number of wordlines, forming core transistor junctions and periphery transistor junctions associated with the wordlines, performing a salicidation process for... Agent:

20110095372 - Forming inter-device sti regions and intra-device sti regions using different dielectric materials: An integrated circuit structure includes a substrate having a first portion in a first device region and a second portion in a second device region; and two insulation regions in the first device region and over the substrate. The two insulation regions include a first dielectric material having a first... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110095371 - Gate minimization threshold voltage of fet for synchronous rectification: A FET device for synchronous rectification of the present invention, a FET having no body diode, the characteristics have gate minimization threshold voltage equal or over load voltage, can be achieve FET turn on, and gate minimization threshold voltage under load voltage, can be achieve FET turn off.... Agent:

20110095374 - Method, design apparatus, and design program of semiconductor device, and semiconductor device: A design method of a semiconductor device includes setting an inspection region of layout data generated based on circuit data, calculating an area ratio of a first area to a second area, the first area indicating an area of the inspection region, the second area indicating a sum of a... Agent: Renesas Electronics Corporation

20110095375 - Mim transistor: The invention concerns a conducting layer having a thickness of between 1 and 5 atoms, an insulated gate being formed over a part of the conducting layer.... Agent: Stmicroelectronics Crolles 2 Sas

20110095373 - Semiconductor chip, stack module, and memory card: Provided are a semiconductor chip including a TSV passing through a transistor, and a stack module and a memory card using such a semiconductor chip. The semiconductor chip may include a semiconductor layer that has a first surface and a second surface opposite to each other. A conductive layer may... Agent:

20110095376 - Single metal dual dielectric cmos device: The present disclosure provides a semiconductor device that includes a semiconductor substrate having a first region and a second region, a pMOS transistor formed over the first region and an nMOS formed over the second region. The pMOS transistor has a gate structure that includes: an interfacial layer formed over... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110095377 - Semiconductor memory devices: In some embodiments, a semiconductor memory device includes a substrate that includes a cell array region and a peripheral circuit region. The semiconductor memory device further includes a device isolation pattern on the substrate. The device isolation pattern defines a first active region and a second active region within the... Agent:

20110095378 - Finfet design with reduced current crowding: An integrated circuit structure includes a substrate and a fin field-effect transistor (FinFET). The FinFET includes a fin over the substrate and having a first fin portion and a second fin portion. A gate stack is formed on a top surface and sidewalls of the first fin portion. An epitaxial... Agent: Taiwan Semiconductor Manufacturing Company, Ltd

20110095379 - Scaling of metal gate with aluminum containing metal layer for threshold voltage shift: A method of forming a p-type semiconductor device is provided, which in one embodiment employs an aluminum containing threshold voltage shift layer to produce a threshold voltage shift towards the valence band of the p-type semiconductor device. The method of forming the p-type semiconductor device may include forming a gate... Agent: International Business Machines Corporation

20110095380 - Semiconductor device: A semiconductor device includes a silicon substrate, and a NiSi layer provided on the silicon substrate aiming to suppress oxidation of the surface of a NiSi layer and the resistivity increase. The NiSi layer includes a bottom NiSi region and a top NiSi region. The bottom NiSi region provided in... Agent: Renesas Electronics Corporation

20110095381 - Gate structure and method for making same: A MOS transistor having its gate successively comprising an insulating layer, a metal silicide layer, a layer of a conductive encapsulation material, and a polysilicon layer.... Agent:

20110095382 - Mems device: A MEMS device of an embodiment includes: a MEMS element; a first cavity region provided on the MEMS element; a second cavity region provided on a surrounding portion outside the MEMS element, the second cavity region having a lower height than the first cavity region; a third cavity region provided... Agent: Kabushiki Kaisha Toshiba

20110095383 - Mems device having a movable electrode: A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a... Agent: Seiko Epson Corporation

20110095384 - Single crystal silicon sensor with additional layer and method of producing the same: A SOI-based MEMS device has a base layer, a device layer, and an insulator layer between the base layer and the device layer. The device also has a deposited layer having a portion that is spaced from the device layer. The device layer is between the insulator layer and the... Agent: Analog Devices, Inc.

20110095385 - Semiconductor device, method of manufacturing the same, and wireless transmission system utilizing the same: A device, and method for manufacturing the same, including a semiconductor package which allows transmission therethrough of a radio signal, a chip which generates the radio signal and a coupler adjacent the chip and effective to radiate the radio signal to outside of the semiconductor package.... Agent: Sony Corporation

20110095386 - Semiconductor sensor for detecting a light radiation: A semiconductor sensor for detecting a radiation including a sensitive layer obtained in an inactive layer adapted to detect a light radiation, a portion thereof having a metal layer attached thereto, while on the remaining portion of the sensitive layer there is an overlapping scintillator. A bonding wire branches from... Agent:

20110095387 - Semiconductor devices having an enhanced absorption region and associated methods: Photosensitive semiconductor devices and associated methods are provided. In one aspect, for example, a photosensitive semiconductor device can include an electromagnetic radiation absorption layer having a thickness of less than or equal to about 200 μm, wherein the electromagnetic radiation absorption layer includes a semiconductor material and an enhanced absorption... Agent:

20110095388 - Avalanche photodiode: The invention relates to an avalanche photodiode (1) for detecting radiation, including a semiconductor substrate (11), an upper diode layer (15), an oppositely doped, laterally delimited lower diode layer (16), an avalanche region situated between the upper diode layer (15) and the lower diode layer (16), wherein the radiation to... Agent: Pnsensor Gmbh.

20110095389 - Optoelectronic semiconductor device and method of fabrication: An optoelectronic device comprising an optically active layer that includes a plurality of domes is presented. The plurality of domes is arrayed in two dimensions having a periodicity in each dimension that is less than or comparable with the shortest wavelength in a spectral range of interest. By virtue of... Agent: The Board Of Trustees Of The Leland Stanford Junior University

20110095390 - Thermoelectric conversion material and thermoelectric conversion element: The present invention provides a thermoelectric conversion material composed of an oxide material represented by chemical formula A0.8-1.2Ta2O6-y, where A is calcium (Ca) alone or calcium (Ca) and at least one selected from magnesium (Mg), strontium (Sr), and barium (Ba), and y is larger than 0 but does not exceed... Agent: Panasonic Corporation

20110095391 - Schottky diode device and method for fabricating the same: A Schottky diode device is provided, including a p-type semiconductor structure. An n drift region is disposed over the p-type semiconductor structure, wherein the n drift region comprises first and second n-type doping regions having different n-type doping concentrations, and the second n-type doping region is formed with a dopant... Agent: Vanguard International Semiconductor Corporation

20110095392 - High voltage resistance coupling structure: The disclosed invention provides a structure and method for providing a high lateral voltage resistance between the electrical networks, sharing a lateral plane, of conductive elements (e.g., having different high voltage potentials) comprising a coupler. In one embodiment, an integrated coupler providing a high lateral voltage resistance comprises a primary... Agent: Infineon Technologies Austria Ag

20110095393 - Creating extremely thin semiconductor-on-insulator (etsoi) having substantially uniform thickness: An extremely thin semiconductor-on-insulator (ETSOI) wafer is created having a substantially uniform thickness by measuring a semiconductor layer thickness at a plurality of selected points on a wafer; determining a removal thickness to be removed at each of the plurality of selected points such that removal of the removal thickness... Agent: International Business Machines Corporation

20110095394 - Antifuse and method of making the antifuse: A method of making an antifuse includes providing a substrate having a bit line diffusion region and a capacitor diffusion region. A gate dielectric layer is formed over the substrate, and a word line is formed on the gate dielectric layer. An oxide layer is formed on the capacitor diffusion... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20110095395 - Inductors and methods for integrated circuits: Inductors and methods for integrated circuits that result in inductors of a size compatible with integrated circuits, allowing the fabrication of inductors, with or without additional circuitry on a first wafer and the bonding of that wafer to a second wafer without wasting of wafer area. The inductors in the... Agent: Maxim Integrated Products, Inc.

20110095396 - Method and structure for silicon nanocrystal capacitor devices for integrated circuits: An improved semiconductor device, including a capacitor structure. The device has a first electrode member, which has a first length and a first width. The device also has a second electrode member, which has a second length and a second width. Additionally, the device includes a capacitor dielectric material provided... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20110095397 - Semiconductor structures including dielectric layers and capacitors including semiconductor structures: Semiconductor structures including a first conductive layer; a dielectric layer on the first conductive layer; a second conductive layer on the dielectric layer; and a crystallized seed layer in at least one of a first portion between the first conductive layer and the dielectric layer and a second portion between... Agent:

20110095398 - Bipolar semiconductor device and method of producing same: A bipolar semiconductor device includes a collector region that is an n-type low-resistance layer formed in one surface of a semiconductor crystal substrate, an n-type first high-resistance region on the collector region, a p-type base region on the first high-resistance region, an n-type low-resistance emitter region that is formed in... Agent: Shindengen Electric Manufacturing Co., Ltd.

20110095399 - Method for manufacturing semiconductor chips from a wafer: A method is for manufacturing semiconductor chips from a wafer which includes a plurality of semiconductor chips. Defects in the crystal structure of the chips may be substantially reduced by producing rupture joints in the surface of the wafer after the wafer has been produced, and by breaking the wafer... Agent:

20110095401 - Method for manufacturing semiconductor device and semiconductor device: In a method for manufacturing a semiconductor device, the method includes the step of growing a nitride-based III-V compound semiconductor layer, which forms a device structure, directly on a substrate without growing a buffer layer, the substrate being made of a material with a hexagonal crystal structure and having a... Agent: Sony Corporation

20110095400 - Process for obtaining a hybrid substrate comprising at least one layer of a nitrided material: A process for obtaining a hybrid substrate that includes at least one active layer of Group III/N material for applications in the field of electronics, optics, photovoltaics or optoelectronics. The method includes selecting a source substrate of Group III/N material having a hexagonal single crystal crystallographic structure; carrying out an... Agent:

20110095402 - Gate dielectric film with controlled structural and physical properties over a large surface area substrate: An α-SiNx:H gate dielectric film deposited over a substrate surface having a surface area larger than 100 cm×100 cm, wherein said α-SiNx:H gate dielectric film exhibits a film thickness which varies by less than about 20% over said surface area, a film density which varies by less than about 17%... Agent: Applied Materials, Inc.

20110095403 - Semiconductor device and method of forming a shielding layer over a semiconductor die disposed in a cavity of an interconnect structure and grounded through the die tsv: A semiconductor device has an interconnect structure with a cavity formed partially through the interconnect structure. A first semiconductor die is mounted in the cavity. A first TSV is formed through the first semiconductor die. An adhesive layer is deposited over the interconnect structure and first semiconductor die. A shielding... Agent: Stats Chippac, Ltd.

20110095404 - Semiconductor device and method of manufacturing the same: A disclosed semiconductor device includes a semiconductor chip having an electrode pad on a circuit forming face of the semiconductor chip, an internal connection terminal formed on the electrode pad, a stepped portion formed along an outer edge portion of the circuit forming face of the semiconductor chip, a first... Agent: Shinko Electric Industries Co., Ltd.

20110095405 - Lead frame and intermediate product of semiconductor device: In a lead frame used for manufacturing a semiconductor device by forming a circuit pattern group including unit lead frames having plural upper side terminal parts in the periphery of a semiconductor element mounting region in one line or plural lines and an outer frame surrounding the circuit pattern group... Agent: Mitsui High-tech, Inc.

20110095406 - Technology of reducing radiation noise of semiconductor device: A first lead frame group is constituted by a plurality of lead frames that are connected to the first circuit, terminals of the plurality of lead frames being provided on a first side of the semiconductor device. A second lead frame group is constituted by a plurality of lead frames... Agent: Canon Kabushiki Kaisha

20110095408 - Microelectronic assembly with impedance controlled wirebond and conductive reference element: A microelectronic assembly can include a microelectronic device having device contacts exposed at a surface thereof and an interconnection element having element contacts and having a face adjacent to the microelectronic device. Conductive elements, e.g., wirebonds connect the device contacts with the element contacts and have portions extending in runs... Agent: Tessera Research LLC

20110095407 - Stackable semiconductor assemblies and methods of manufacturing such assemblies: Stacked semiconductor devices and assemblies including attached lead frames are disclosed herein. One embodiment of a method of manufacturing a semiconductor assembly includes forming a plurality of first side trenches to a first intermediate depth in a molded portion of a molded wafer having a plurality of dies arranged in... Agent: Micron Technology, Inc.

20110095409 - Method of attaching an interconnection plate to a semiconductor die within a leadframe package: A method is disclosed for attaching an interconnection plate to semiconductor die within leadframe package. A base leadframe is provided with die pad for attaching semiconductor die. An interconnection plate is provided for attachment to the base leadframe and semiconductor die. Add a base registration feature onto base leadframe and... Agent:

20110095412 - Semiconductor device: In a non-leaded type semiconductor device, a tab, tab suspension leads, and other leads are exposed to one surface of a seal member. A semiconductor element is positioned within the seal member and fixed to a surface of the tab with an adhesive. The tab is formed larger than the... Agent: Hitachi Hokkai Semiconductor, Ltd.

20110095410 - Wafer level semiconductor device connector: This document discusses, among other things, a semiconductor connector including a conductive pad in a recessed pad area on a surface of a dielectric, the dielectric material configured to be activated to conductive plating deposition using laser ablation.... Agent: Fairchild Semiconductor Corporation

20110095411 - Wirebond-less semiconductor package: A wirebond-less packaged semiconductor device includes a plurality of I/O contacts, at least one semiconductor die, the semiconductor die having a bottom major surface and a top major surface, the top major surface having at least two electrically isolated electrodes, and a conductive clip system disposed over the top major... Agent: Texas Instruments Incorporated

20110095413 - Method and apparatus for semiconductor device fabrication using a reconstituted wafer: Method and apparatus for semiconductor device fabrication using a reconstituted wafer is described. In one embodiment, diced semiconductor chips are placed within openings on a frame. A reconstituted wafer is formed by filling a mold compound into the openings. The mold compound is formed around the chips. Finished dies are... Agent:

20110095416 - Package for high power integrated circuits and method for forming: A method for packaging an integrated circuit comprises the steps of: providing a ground plane, the ground plane having a recessed area shaped to receive an integrated circuit die, wherein the integrated circuit die having a first surface with active circuitry, a second surface, and an edge generally orthogonal to... Agent:

20110095415 - Routing layer for mitigating stress in a semiconductor die: A routing layer for a semiconductor die is disclosed. The routing layer includes pads for attaching solder bumps; bond-pads bonded to bump-pads of a die having an integrated circuit, and traces interconnecting bond-pads to pads. The routing layer is formed on a layer of dielectric material. The routing layer includes... Agent: Ati Technologies Ulc

20110095414 - Semiconductor substrate, laminated chip package, semiconductor plate and method of manufacturing the same: A semiconductor substrate has a plurality of groove portions formed along scribe lines. The semiconductor substrate includes: a device region in contact with at least any one of the plurality of groove portions and having a semiconductor device formed therein; a surface insulating layer formed to cover the device region... Agent: Sae Magnetics (h.k.) Ltd.

20110095419 - Conductive film, method of manufacturing the same, semiconductor device and method of manufacturing the same: There is provided a conductive film. The conductive film includes: an anodized layer having a plurality of through holes extending therethrough in its thickness direction; a plurality of linear conductors each formed in a corresponding one of the through holes and each having first and second protrusions protruding from the... Agent: Shinko Electric Industries Co., Ltd.

20110095422 - Electronic component, semiconductor device, methods of manufacturing the same, circuit board, and electronic instrument: An electronic component including an electronic element, an electrode that is formed on a first surface of the electronic element, a first resin layer that is formed over the first surface of the electronic element, a wiring that is electrically connected to the electrode, a first portion of the wiring... Agent: Seiko Epson Corporation

20110095421 - Flip chip package and method of manufacturing the same: There is provided a flip chip package including an electronic device, a board including a conductive pad disposed inside a mounting region of the board on which the electronic device is mounted, and a connection pad disposed outside the mounting region, a resin layer formed on the board and including... Agent: Samsung Electro-mechanics Co., Ltd.

20110095417 - Leadless semiconductor device terminal: This document discusses, among other things, a semiconductor die having a first conductive bump coupled to a first electrical terminal at a first die surface of a semiconductor die and a dielectric substantially covering the first die surface and substantially surrounding the first conductive bump. A surface of the dielectric... Agent: Fairchild Semiconductor Corporation

20110095420 - Semiconductor device and method of manufacturing semiconductor device: A semiconductor device includes a protective insulating film, an opening formed in the protective insulating film, an electrode pad located within the opening, a bump formed on the protective insulating film, and an interconnect. The bump includes a bump core and a conductive film. The bump core includes an insulating... Agent: Renesas Electronics Corporation

20110095423 - Semiconductor device mounted structure and its manufacturing method: A semiconductor device mounted structure includes a semiconductor device having a plurality first electrodes, a circuit board having a plurality of second electrodes, a plurality of bumps respectively formed on the plurality of first electrodes, a plurality of bonding members respectively positioned between the bumps and the second electrodes to... Agent:

20110095418 - Semiconductor package and method for fabricating the same: A semiconductor package includes a semiconductor chip having a first bump group and a second bump group, and a package substrate having a first pattern for data communication with the semiconductor chip and a second pattern for supplying power to the semiconductor chip or grounding the semiconductor chip, wherein the... Agent:

20110095425 - Ball grid array substrate, semiconductor chip package and method of manufacturing the same: Provided is a ball grid array substrate, a semiconductor chip package, and a method of manufacturing the same. The ball grid array substrate includes an insulating layer having a first surface providing a mounting region for a semiconductor chip, a second surface opposing the first surface, and an opening connecting... Agent: Samsung Electro-mechanics Co., Ltd.

20110095426 - Hybrid package: The embodiments described herein provide for a packaging configuration that provides leads or connections for a packaging substrate from opposing surfaces of a package. Through silicon vias (TSV) are provided in order to accommodate additional input/output (I/O) pins that smaller dies are supporting. Various combinations of packages are enabled through... Agent:

20110095424 - Semiconductor package structure: The semiconductor package structure includes first and second packages. The first package has at least one first semiconductor chip disposed on a first printed circuit board, and at least one first pad disposed on the at least one first semiconductor chip. The second package has at least one second pad... Agent: Samsung Electronics Co., Ltd.

20110095427 - Low-resistance interconnects and methods of making same: Devices and methods for providing low-resistance interconnects in a semiconductor device are provided. Specifically, one or more embodiments of the present invention relate to disposing a conductive material in a trench without disposing a resistive barrier material between the conductive material and the sidewalls of the trench so that the... Agent: Micron Technology, Inc.

20110095429 - Methods for fabricating and filling conductive vias and conductive vias so formed: Methods for forming conductive vias include foiling one or more via holes in a substrate. The via holes may be formed with a single mask, with protective layers, bond pads, or other features of the substrate acting as hard masks in the event that a photomask is removed during etching... Agent: Micron Technology, Inc.

20110095428 - Small area, robust silicon via structure and process: A semiconductor structure includes: at least one silicon surface wherein the surface can be a substrate, wafer or other device. The structure further includes at least one electronic circuit formed on each side of the at least one surface; and at least one conductive high aspect ratio through silicon via... Agent: International Business Machines Corporation

20110095430 - Semiconductor device: A semiconductor device includes at least three or more wiring layers stacked in an interlayer insulating film on a semiconductor substrate, a seal ring provided at the outer periphery of a chip region of the semiconductor substrate and a chip strength reinforcement provided in part of the chip region near... Agent: Panasonic Corporation

20110095432 - Electronic component and semiconductor device, method of making the same and method of mounting the same, circuit board and electronic instrument: A semiconductor device with its package size close to its chip size has a stress absorbing layer, allows a patterned flexible substrate to be omitted, and allows a plurality of components to be fabricated simultaneously. There is: a step of forming electrodes on a wafer; a step of providing a... Agent: Seiko Epson Corporation

20110095431 - Thermo-compression bonded electrical interconnect structure: An electrical structure and method for forming. The electrical structure includes a first substrate comprising a first electrically conductive pad, a second substrate comprising a second electrically conductive pad, and an interconnect structure electrically and mechanically connecting the first electrically conductive pad to the second electrically conductive pad. The interconnect... Agent: International Business Machines Corporation

20110095434 - Apparatus and methods of forming memory lines and structures using double sidewall patterning for four times half pitch relief patterning: The present invention provides apparatus, methods, and systems for fabricating memory lines and structures using double sidewall patterning for four times half pitch relief patterning. The invention includes forming features from a first template layer disposed above a substrate, forming half-pitch sidewall spacers adjacent the features, forming smaller features in... Agent: Sandisk 3d LLC

20110095433 - Conductive film, method of manufacturing the same, semiconductor device and method of manufacturing the same: There is provided a method of manufacturing a conductive film. The method includes: (a) providing an anodized layer having a plurality of through holes extending therethrough in its thickness direction; (b) forming a plurality of linear conductors by filling each of the through holes with a conductive material; (c) forming... Agent: Shinko Electric Industries Co., Ltd.

20110095435 - Coaxial through-silicon via: A through-silicon via (TSV) structure forming a unique coaxial or triaxial interconnect within the silicon substrate. The TSV structure is provided with two or more independent electrical conductors insulated from another and from the substrate. The electrical conductors can be connected to different voltages or ground, making it possible to... Agent: International Business Machines Corporation

20110095439 - Integrated circuit package system with through semiconductor vias and method of manufacture thereof: A method of manufacture of an integrated circuit package system includes: providing a package substrate; mounting a first integrated circuit die, having through silicon vias, on the package substrate; coupling cylindrical studs to the package substrate adjacent to the first integrated circuit die; and mounting a second integrated circuit die,... Agent:

20110095437 - Interface plate between integrated circuits: An interface plate capable of being mounted between first and second surface-mounted electronic chips. The plate includes a plurality of first, second, and third through openings, the first openings being filled with a conductive material and being arranged to be in front of pads of the first and second chips... Agent: Stmicroelectronics S.a.

20110095438 - Methods and apparatus for layout of three dimensional matrix array memory for reduced cost patterning: The present invention provides apparatus, methods, and systems for a memory layer layout for a three-dimensional memory. The memory layer includes a plurality of memory array blocks; a plurality of memory lines coupled to the memory array blocks; and a plurality of zia contact areas for coupling the memory layer... Agent: Sandisk 3d LLC

20110095436 - Through silicon via with dummy structure and method for forming the same: A through silicon via structure includes a top pad and a vertical conductive post that is connected to the top pad. The top pad covers a wider area than the cross section of the vertical conductive post. An interconnect pad is formed at least partially below the top pad. An... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110095440 - Semiconductor package including flip chip controller at bottom of die stack: A semiconductor package including a plurality of stacked semiconductor die, and methods of forming the semiconductor package, are disclosed. In order to ease wirebonding requirements on the controller die, the controller die may be mounted directly to the substrate in a flip chip arrangement requiring no wire bonds or footprint... Agent:

20110095441 - Microelectronic assemblies having compliant layers: A compliant semiconductor chip package assembly includes a semiconductor chip having a plurality of chip contacts, and a compliant layer having a top surface, a bottom surface and sloping peripheral edges, whereby the bottom surface of the compliant layer overlies a surface of the semiconductor chip. The assembly also includes... Agent: Tessera, Inc.

20110089392 - Memory using tunneling field effect transistors: A memory includes a first tunneling field effect transistor including a first drain and a first source, the first drain coupled to a first resistive memory element. The memory includes a second tunneling field effect transistor including a second drain and sharing the first source, the second drain coupled to... Agent: Qimonda Ag

20110089391 - Punch-through diode steering element: A storage system and method for forming a storage system that uses punch-through diodes as a steering element in series with a reversible resistivity-switching element is described. The punch-through diode allows bipolar operation of a cross-point memory array. The punch-through diode may have a symmetrical non-linear current/voltage relationship. The punch-through... Agent:

20110089393 - Memory and method of fabricating the same: A memory, comprising a metal portion, a first metal layer and second metal oxide layer is provided. The first metal oxide layer is on the metal element, and the first metal oxide layer includes N resistance levels. The second metal oxide layer is on the first metal oxide layer, and... Agent: Macronix International Co., Ltd.

20110089394 - Semiconductor device: A semiconductor device includes a first insulating film over a semiconductor substrate. The first insulating film includes a first opening, a first electrode in the first opening, and a second insulating film over the first insulating film. The second insulating film includes a second opening that is positioned over the... Agent: Elpida Memory, Inc.

20110089395 - Structure and manufacturing method of semiconductor memory device: A semiconductor memory device having a cross point structure includes a plurality of upper electrodes arranged to extend in one direction, and a plurality of lower electrodes arranged to extend in another direction at a right angle to the one direction of the upper electrodes. Memory materials are provided between... Agent: Sharp Kabushiki Kaisha

20110089396 - Field emission array having carbon microstructure and method of manufacturing the same: Provided is a method for manufacturing a field emission array with a carbon microstructure. The method includes: a photomask attachment step of attaching a photomask with a pattern groove to one surface of a transparent substrate; a photoresist attachment step of attaching a negative photoresist to one surface of the... Agent: Korea Advanced Institute Of Science And Technology

20110089397 - Spin-polarized electron source: In a spin-polarized electron generating device having a substrate, a buffer layer, and a strained superlattice layer formed on the buffer layer, an intermediate layer formed of a crystal having a lattice constant greater than that of a crystal used to form the buffer layer intervenes between the substrate and... Agent:

20110089399 - Light emitting device with a stair quantum well structure: A light emitting device with a stair quantum well structure in an active region. The stair quantum well structure may include a primary well and a single step or multiple steps. The light emitting device may be a nonpolar, semipolar or polar (Al,Ga,In)N based light emitting device. The stair quantum... Agent: The Regents Of The University Of California

20110089398 - Method for improving internal quantum efficiency of group-iii nitride-based light emitting device: A method for improving internal quantum efficiency of a group-III nitride-based light emitting device is disclosed. The method includes the steps of: providing a group-III nitride-based substrate having a single crystalline structure; forming on the group-III nitride-based substrate an oxide layer, having a plurality of particles, without absorption of visible... Agent: Walsin Lihwa Corporation

20110089400 - Nanowire wrap gate devices: The present invention provides a semiconductor device comprising at least a first semiconductor nanowire (105) having a first lengthwise region (121) of a first conductivity type, a second lengthwise region (122) of a second conductivity type, and at least a first wrap gate electrode (111) arranged at the first region... Agent: Qunano Ab

20110089401 - Semiconductor light-emitting element, electrode and manufacturing method for the element, and lamp: A semiconductor light-emitting element including a substrate, a laminated semiconductor layer including a light-emitting layer formed over the substrate, one electrode (111) formed over the upper face of the laminated semiconductor layer, and an other electrode formed over the exposed surface of the semiconductor layer, from which the laminated semiconductor... Agent: Showa Denko K.k.

20110089402 - Composite nanorod-based structures for generating electricity: One aspect of the invention involves an article of manufacture that includes a dielectric layer with an array of pores, and an array of nanowires at least partially contained within the array of pores. A respective nanowire in the array of nanowires is formed within a respective pore in the... Agent:

20110089403 - Electronic device using a two-dimensional sheet material, transparent display and methods of fabricating the same: An electronic device, a transparent display and methods for fabricating the same are provided, the electronic device including a first, a second and a third element each formed of a two-dimensional (2D) sheet material. The first, second, and third elements are stacked in a sequential order or in a reverse... Agent: Samsung Electronics Co., Ltd.

20110089404 - Microfabrication of carbon-based devices such as gate-controlled graphene devices: A graphene device includes a graphene layer and a back gate electrode connected to apply a global electrical bias to the graphene from a first surface of the graphene. At least two graphene device electrodes are each connected to a corresponding and distinct region of the graphene at a second... Agent: President And Fellows Of Harvard College

20110089405 - Systems and methods for fabrication of superconducting integrated circuits: Various techniques and apparatus permit fabrication of superconductive circuits and structures, for instance Josephson junctions, which may, for example be useful in quantum computers. For instance, a low magnetic flux noise trilayer structure may be fabricated having a dielectric structure or layer interposed between two elements or layers capable of... Agent: D-wave Systems Inc.

20110089409 - Alternating copolymers of phenylene vinylene and biarylene vinylene, preparation method thereof, and organic thin film transistor comprising the same: Disclosed herein are an alternating copolymer of phenylene vinylene and biarylene vinylene, a preparation method thereof, and an organic thin film transistor including the same. The organic thin film transistor maintains low off-state leakage current and realizes a high on/off current ratio and high charge mobility because the organic active... Agent:

20110089411 - Cross linkable ionic compounds: Ionic compounds comprising: (a) a cationic radical of a charge transporting compound which has one or more reactive groups; and (b) a counter anion. The reactive functional groups on the cation allow the ionic compound to cross-link with a host charge transport compound. Such ionic compounds may have various properties,... Agent:

20110089407 - Electroluminiscent metal complexes with dibenzo[f,h] quinoxalines: This invention relates to electroluminescent metal complexes of the formula (I), or (II), a process for their preparation, electronic devices comprising the metal complexes and their use in electronic devices, especially organic light emitting diodes (OLEDs), as oxygen sensitive indicators, as phosphorescent indicators in bioassays, and as catalysts.... Agent: Basf Se

20110089410 - Electronic device comprising metal complexes: The present invention relates to organic electroluminescent devices comprising metal complexes according to the formula (1) and metal complexes for use in organic electroluminescent devices.... Agent: Merck Patent Gmbh

20110089406 - Multilayer heterostructures for application in oleds and photovoltaic devices: This invention relates to a supported polymer heterostructure and methods of manufacture. The heterostructure is suitable for use in a range of applications which require semiconductor devices, including photovoltaic devices and light-emitting diodes.... Agent:

20110089408 - Organic electronic device and dopant for doping an organic semiconducting matrix material: An organic electronic device includes a substrate, a first electrode arranged on the substrate, at least a first functional organic layer arranged on the first electrode and a second electrode arranged on the first functional organic layer. The first functional organic layer includes a matrix material and a p-dopant with... Agent:

20110089412 - Patterning method, production method of device using the patterning method, and device: Provided is a patterning method, wherein a donor substrate, in which a light-to-heat conversion layer and a division pattern are formed on a substrate and a transferring material exists within said division pattern, is opposed to a device substrate and said transferring material is transferred on the device substrate by... Agent:

20110089415 - Epitaxial growth of single crystalline mgo on germanium: The embodiments disclosed herein relate to growth of magnesium-oxide on a single crystalline substrate of germanium. The embodiments further describes a method of manufacturing and crystalline structure of a FM/MgO/Ge(001) heterostructure. The embodiments further related to method of manufacturing and a crystalline structure for a high-k dielectric//MgO [100](001)//Ge[110](001) heterostructure.... Agent: The Regents Of The University Of California

20110089413 - High-performance diode device structure and materials used for the same: A diode and memory device including the diode, where the diode includes a conductive portion and another portion formed of a first material that has characteristics allowing a first decrease in a resistivity of the material upon application of a voltage to the material, thereby allowing current to flow there... Agent:

20110089417 - Semiconductor device: An objet of the present invention is to provide a semiconductor device with a new structure. Disclosed is a semiconductor device including a first transistor which includes a channel formation region on a substrate containing a semiconductor material, impurity regions formed with the channel formation region interposed therebetween, a first... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110089419 - Semiconductor device: An object is to provide a memory device including a memory element that can be operated without problems by a thin film transistor with a low off-state current. Provided is a memory device in which a memory element including at least one thin film transistor that includes an oxide semiconductor... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110089414 - Semiconductor device and manufacturing method thereof: An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110089416 - Semiconductor device and method for manufacturing the same: An object is to provide a semiconductor device with stable electric characteristics in which an oxide semiconductor is used. An impurity such as hydrogen or moisture (e.g., a hydrogen atom or a compound containing a hydrogen atom such as H2O) is eliminated from an oxide semiconductor layer with use of... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110089418 - Zinc oxide based compound semiconductor device: In a ZnO based compound semiconductor device, nitrogen (N) doped (Mg)ZnO:N layer is inserted as a diffusion barrier layer 9 between a ZnO based n-type layer 3 to which n-type dopants are doped and an active layer 4 or a p-type layer 5. The diffusion barrier layer 9 prevents diffusion... Agent: Stanley Electric Co., Ltd.

20110089420 - Backside only contact thin-film solar cells and devices, systems and methods of fabricating same, and products produced by processes thereof: Systems, methods, devices, and products of processes consistent with the innovations herein relate to thin-film solar cells having contacts on the backside, only. In one exemplary implementation, there is provided a thin film device. Moreover, such device may comprise a substrate, and a layer of silicon or silicon-containing material positioned... Agent:

20110089424 - Display substrate, method of manufacturing the same, and display apparatus having the same: A display substrate includes a pixel electrode, an m-th data line (‘m’ is a natural number), a floating electrode, a (m+1)-th data line and a storage electrode. The pixel electrode is disposed in a pixel area of the substrate. The m-th data line is disposed at a first side of... Agent: Samsung Electronics Co., Ltd.

20110089422 - Thin film transistor array panel: A thin film transistor (TFT) array panel includes: first and second pixel electrodes neighboring each other; a data line extending between the first and the second pixel electrodes; first and second gate lines extending perpendicularly to the data line; a first TFT including a first gate electrode connected to the... Agent:

20110089423 - Thin film transistor array panel: A thin film transistor array panel can include: a substrate; a gate line formed on the substrate; a gate pad formed at an end of the gate line; a gate identification member corresponding to the gate pad and formed in the same layer as the gate pad; a gate insulating... Agent:

20110089421 - Thin film transistor array panel and method for manufacturing the same: A thin film transistor array panel includes: a substrate; a signal line disposed on the substrate and including copper (Cu); a passivation layer disposed on the signal line and having a contact hole exposing a portion of the signal line; and a conductive layer disposed on the passivation layer and... Agent:

20110089426 - Integrated circuit, semiconductor device comprising the same, electronic device having the same, and driving method of the same: An integrated circuit mounting a DRAM which can realize high integration without complicated manufacturing steps. The integrated circuit according to the invention comprises a DRAM in which a plurality of memory cells each having a thin film transistor are disposed. The thin film transistor comprises an active layer including a... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110089425 - Method for manufacturing semiconductor device: A method for manufacturing an insulating film, which is used as an insulating film used for a semiconductor integrated circuit, whose reliability can be ensured even though it has small thickness, is provided. In particular, a method for manufacturing a high-quality insulating film over a substrate having an insulating surface,... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110089427 - Securities, chip mounting product, and manufacturing method thereof: The invention provides an ID chip with reduced cost, increased impact resistance and attractive design, as well as products and the like mounting the ID chip and a manufacturing method thereof. In view of the foregoing, an integrated circuit having a semiconductor film with a thickness of 0.2 μm or... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110089428 - Semiconductor device and manufacturing method thereof: An LDD region 207 provided in an n-channel TFT 302 forming a driving circuit enhances the tolerance for hot carrier injection. LDD regions 217-220 provided in an n-channel TFT (pixel TFT) 304 forming a pixel portion greatly contribute to the decrease in the OFF current value. Here, the LDD region... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110089429 - Systems, methods and materials involving crystallization of substrates using a seed layer, as well as products produced by such processes: Systems, methods, and products of processes consistent with the innovations herein relate to aspects involving crystallization of layers on substrates. In one exemplary implementation, there is provided a method of fabricating a device. Moreover, such method may include placing a seed layer on a base substrate, covering the seed layer... Agent:

20110089430 - Compound semiconductor device and method for fabricating the same: The compound semiconductor device comprises an i-GaN buffer layer 12 formed on an SiC substrate 10; an n-AlGaN electron supplying layer 16 formed on the i-GaN buffer layer 12; an n-GaN cap layer 18 formed on the n-AlGaN electron supplying layer 16; a source electrode 20 and a drain electrode... Agent: Fujitsu Limited

20110089431 - Compound single crystal and method for producing the same: A method for producing a compound single crystal includes a process (I) of growing the compound single crystal while causing an anti-phase boundary and a stacking fault to equivalently occur in a <110> direction parallel to the surface, the stacking fault being attributable to the elements A and B; a... Agent: Hoya Corporation

20110089433 - Method for manufacturing nitrogen compound semiconductor substrate and nitrogen compound semiconductor substrate, and method for manufacturing single crystal sic substrate and single crystal sic substrate: In order to provide a method for manufacturing a single crystal SiC substrate that can obtain an SiC layer with good crystallinity, an Si substrate 1 having a surface Si layer 3 of a predetermined thickness and an embedded insulating layer 4 is prepared, and when the Si substrate 1... Agent:

20110089432 - Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap device: An electrical device on a single semiconductor substrate includes: an open base vertical PNP transistor placed in parallel with a wide bandgap, high voltage diode wherein the PNP transistor has a P doped collector region, an N-doped base layer, an N doped buffer layer, and a P doped emitter layer.... Agent: Fairchild Semiconductor Corporation

20110089437 - Cross flow cvd reactor: A cross flow chemical vapor deposition chamber can comprise an inlet duct having a generally rectangular cross-section and an outlet duct having a generally rectangular cross-section. The rectangular inlet duct and the rectangular outlet duct can facilitate laminar flow of reactant gases over a susceptor. Movable partitions can be configured... Agent: Bridgelux, Inc.

20110089434 - Display panel and rework method of gate insulating layer of thin film transistor: A rework method of a gate insulating layer of a thin film transistor includes the following steps. First, a substrate including a silicon nitride layer, which serves as a gate insulating layer, disposed thereon. Subsequently, a first film removal process is performed to remove the silicon nitride layer. The first... Agent:

20110089436 - Light emitting device, method of manufacturing the same, light emitting device package and lighting system: A method of manufacturing a light emitting device according to the embodiment includes the steps of partially forming a first buffer layer on a growth substrate, in which the first buffer layer has a Young's modulus smaller than that of the growth substrate; and forming a light emitting structure layer... Agent:

20110089435 - Light emitting device, method of manufacturing the same, light emitting device package, and lighting system: A light emitting device includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers; a passivation layer at least partially on the light emitting structure; a first electrode on the first conductive... Agent:

20110089438 - Opto-electrical assemblies and associated apparatus and methods: Provided is a method of providing an opto-electrical assembly. The method comprises attaching a second electrical element to a carrier using a second attachment region at a second attaching temperature. The second attaching temperature is associated with the melting temperature of the second attachment region, such as the melting temperature... Agent: Zarlink Semiconductor Ab

20110089439 - Integrated cmos porous sensor: A single chip wireless sensor comprises a microcontroller connected by a transmit/receive interface to a wireless antenna. The microcontroller is also connected to an 8 kB RAM, a USB interface, an RS232 interface, 64 kB flash memory, and a 32 kHz crystal. The device senses humidity and temperature, and a... Agent: Chipsensors Limited

20110089440 - Light emitting device and light emitting device package having the same: Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a first chip structure including a first reflective layer and a first light emitting structure having a plurality of compound semiconductor layers on the first reflective layer; a second chip... Agent: Lg Innotek Co., Ltd.

20110089441 - Multichip type led package structure for generating light-emitting effect similar to circle shape: A multichip type LED package structure for generating light-emitting effect similar to circle shape includes a substrate unit, a light-emitting unit and a package unit. The substrate unit has a substrate body and a plurality of conductive circuits separated from each other by a predetermined distance and disposed on the... Agent: Paragon Semiconductor Lighting Technology Co., Ltd

20110089442 - Optoelectronic device: An optoelectronic device comprising: a substrate; a plurality of semiconductor units electrically connected with each other and disposed jointly on the substrate, wherein each semiconductor unit comprises a first semiconductor layer, a second semiconductor layer, and an active region interposed between thereof; a plurality of first electrodes disposed on each... Agent:

20110089444 - Light-emitting element: A light emitting element includes a carrier, a conductive connecting structure disposed on the carrier, an epitaxial stack structure including at least a first lighting stack and a second lighting stack disposed on the conductive connecting structure, an insulation section disposed between the epitaxial stack structure and the conductive connecting... Agent: Epistar Corporation

20110089443 - Packaging structure of ac light-emitting diodes: A packaging structure of AC LEDs is provided, which comprises: a carrier containing a positive electrode connecting end, and a negative electrode connecting end; an AC LED module disposed on the carrier, wherein the AC LED module electrically connects to the positive electrode connecting end and the negative electrode connecting... Agent: Forward Electronics Co., Ltd.

20110089445 - Method for preparing a semiconductor: The invention concerns a method for preparing a NIII-V semiconductor. According to the invention, the method includes at least one step of doping a semiconductor of general formula AlxGa1-xN, wherein the atomic number x represents the number between 0 and 1 with a p-type electron-accepting dopant, as well as a... Agent: Commissariat A L'energie Atomique

20110089453 - Light emitting apparatus: Disclosed is a light emitting apparatus. The light emitting apparatus includes a package body; first and second electrodes; a light emitting device electrically connected to the first and second electrodes and including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and... Agent:

20110089458 - Light emitting device and method for manufacturing a light emitting device: A light emitting device and a method for manufacturing a light emitting device, wherein the light emitting device comprises a light emitting diode (LED) emitting light in a first emission spectrum, and a composition comprising at least two components and being adapted to absorb at least a part of the... Agent: Ledon Lighting Jennersdorf Gmbh

20110089449 - Light emitting diode package structure: An LED package structure includes a house, an LED chip, a transparent cover, and a surrounding wall. The house has an upper surface, a cavity exposed by the upper surface, and a surrounding plane. The LED chip is disposed on the bottom surface of the cavity. The transparent cover is... Agent:

20110089447 - Light-emiting device chip with micro-lenses and method for fabricating the same: A light-emitting device (LED) chip is disclosed. The LED chip includes a body having a light extraction surface. The body includes semiconductor layers including an n-type region and a p-type region. A plurality of micro-lenses is directly on the light extraction surface of the body. A pair of bond pads... Agent:

20110089446 - Light-emitting diode having optical film structure thereon: The invention discloses a light-emitting diode having an optical film structure thereon. The light-emitting diode includes a substrate, a light-emitting laminated structure, and an optical film structure. The light-emitting laminated structure is formed on the substrate, and the optical film structure is formed on the light-emitting laminated structure. The optical... Agent:

20110089455 - Optical designs for high-efficacy white-light emitting diodes: A method for increasing the luminous efficacy of a white light emitting diode (WLED), comprising introducing optically functional interfaces between an LED die and a phosphor, and between the phosphor and an outer medium, wherein at least one of the interfaces between the phosphor and the LED die provides a... Agent: The Regents Of The University Of California

20110089459 - Optoelectronic apparatus: An optoelectronic apparatus includes an optical device with an optical structure including a plurality of optical elements, and a radiation-emitting or radiation-receiving semiconductor chip with a contact structure which includes a plurality of contact elements that make electrical contact with the semiconductor chip and are spaced apart vertically from the... Agent: Osram Opto Semiconductors Gmbh

20110089456 - Semiconductor light emitting devices with applied wavelength conversion materials and methods for forming the same: A semiconductor structure includes an active region configured to emit light upon the application of a voltage thereto, a window layer configured to receive the light emitted by the active region, and a plurality of discrete phosphor-containing regions on the window layer and configured to receive light emitted by the... Agent:

20110089450 - Semiconductor light-emitting device and method for fabricating the same: A semiconductor light-emitting device is provided. The semiconductor light-emitting device may include a light-emitting structure, an electrode, an ohmic layer, an electrode layer, an adhesion layer, and a channel layer. The light-emitting structure may include a compound semiconductor layer. The electrode may be disposed on the light-emitting structure. The ohmic... Agent:

20110089451 - Semiconductor light-emitting device and method for fabricating the same: A semiconductor light-emitting device is provided that may include an electrode layer, a light-emitting structure including a compound semiconductor layer on the electrode layer, and an electrode on the light-emitting structure, wherein the electrode includes an ohmic contact layer that contacts the compound semiconductor layer, a first barrier layer on... Agent:

20110089452 - Semiconductor light-emitting device and method for fabricating the same: A semiconductor light-emitting device is provided. The semiconductor light-emitting device may include a light-emitting structure, an electrode, a reflective layer, a conductive support member, and a channel layer. The light-emitting structure may include a plurality of compound semiconductor layers. The electrode may be disposed on the compound semiconductor layer. The... Agent:

20110089448 - Single encapsulant for a plurality of light sources: In an embodiment, the invention provides a light source comprising a plurality of light-emitting semiconductor chips, a plurality of electrical leads and an encapsulant. The plurality of electrical leads is connected to the plurality of light-emitting semiconductor chips. The encapsulant completely encases the plurality of semiconductor chips. The encapsulant partially... Agent: Avago Technologies EcbuIP(singapore) Pte. Ltd.

20110089454 - Surface-textured encapsulations for use with light emitting diodes: Surface-textured encapsulations for use with light emitting diodes. In an aspect, a light emitting diode apparatus is provided that includes a light emitting diode, and an encapsulation formed upon the light emitting diode and having a surface texture configured to extract light. In an aspect, a method includes encapsulating a... Agent: Bridgelux, Inc.

20110089457 - Surface-textured encapsulations for use with light emitting diodes: Surface-textured encapsulations for use with light emitting diodes. In an aspect, a light emitting diode apparatus is provided that includes a light emitting diode, and an encapsulation formed upon the light emitting diode and having a surface texture configured to extract light. In an aspect, a method includes encapsulating a... Agent: Bridgelux, Inc.

20110089461 - Led package structure and manufacturing process thereof: A process for manufacturing an LED package structure includes the following steps: (A) providing a T-shaped heat-sink block and an integral material sheet, wherein the T-shaped heat-sink block includes a base portion and a rise portion extending from the base portion, and wherein the integral material sheet includes a side... Agent: Forward Electronics Co., Ltd.

20110089460 - Light emitting diode assembly: An electronic assembly includes a Light Emitting Diode (LED) mounted on a top surface of a heat spreader, at least two electrical contacts co-planar with the heat spreader, and at least one heat slug mounted on the top surface of the heat spreader, where the heat slug is made of... Agent: Avago Technologies EcbuIP(singapore) Pte. Ltd.

20110089464 - Light emitting diode package and method of fabricating the same: A light emitting diode package includes a base having a first surface, an electrode portion attached to the base, a pair of inner electrodes disposed on the first surface, a pair of outer electrodes, a pair of conductive pillars, a light emitting diode die, and a cap layer. Each outer... Agent: Advanced Optoelectronic Technology Inc.

20110089463 - Light source: Light sources are disclosed herein. One embodiment comprises a substrate having a first surface and a second surface located opposite the first surface. At least one first electrically conductive layer is affixed to the first surface of the substrate and partially covering the first surface of the substrate. At least... Agent: Avago Technologies EcbuIP(singapore) Pte. Ltd.

20110089462 - Method for low temperature bonding of electronic components: A method for bonding an LED assembly (71) or other electronic package (31) to a substrate PCB containing a heat-sink (52), which utilizes layers of reactive multilayer foil (51) disposed between contacts (32, 34) of the electronic package 31 and the associated contact pads (55) on the supporting substrate PCB.... Agent:

20110089465 - Semiconductor chip assembly with post/base heat spreader with esd protection layer: A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace and an adhesive. The heat spreader includes a post, a base, an ESD protection layer and an underlayer. The conductive trace includes a pad and a terminal. The semiconductor device is electrically connected to the conductive... Agent:

20110089466 - Semiconductor light emitting device: A semiconductor light emitting device includes a substrate 11 including a group III-V nitride semiconductor; a first-conductivity-type layer 12 formed on the substrate 11, the first-conductivity-type layer including a plurality of group III-V nitride semiconductor layers of first conductivity type; an active layer 13 formed on the first semiconductor layer... Agent: Panasonic Corporation

20110089468 - Hemt device and a manufacturing of the hemt device: A HEMT device and a manufacturing of the HEMT device, the HEMT device includes: a buffer layer (14) on the substrate (12); a semiconductor layer on the buffer layer (14); an isolation layer (16, 17) on the semiconductor layer; a source electrode (22) and a drain electrode (23) contacted with... Agent:

20110089467 - Ohmic contact of iii-v semiconductor device and method of forming the same: Heavily doped epitaxial SiGe material or epitaxial InxGa1-xAs are used to form the source and drain of III-V semiconductor device to apply stress to the channel of III-V semiconductor device. Therefore, the electron mobility can be increased.... Agent: National Chiao Tung University

20110089469 - Method for manufacturing a low defect interface between a dielectric and a iii-v compound: The present invention is related to a method for manufacturing a low defect interface between a dielectric material and an III-V compound. More specifically, the present invention relates to a method for manufacturing a passivated interface between a dielectric material and an III-V compound. The present invention is also directed... Agent: Imec

20110089470 - Semiconductor device having layout of logic cell and interface cell with unification of transistor orientation: In a semiconductor device, a plurality of interface cells is disposed on four sides of an LSI chip in connection with a logic circuit area including a plurality of logic cells. Each interface cell may include four functional blocks which are vertically or horizontally aligned without being rotated, thus forming... Agent:

20110089471 - Demodulation pixel incorporating majority carrier current, buried channel and high-low junction: A demodulation pixel improves the charge transport speed and sensitivity by exploiting two effects of charge transport in silicon in order to achieve the before-mentioned optimization. The first one is a transport method based on the CCD gate principle. However, this is not limited to CCD technology, but can be... Agent: Mesa Imaging Ag

20110089472 - Integrated mos sensor having temperature sensor: A single chip wireless sensor comprises a microcontroller connected by a transmit/receive interface to a wireless antenna. The microcontroller is also connected to an 8 kB RAM, a USB interface, an RS232 interface, 64 kB flash memory, and a 32 kHz crystal. The device senses humidity and temperature, and a... Agent: Chipsensors Limited.

20110089473 - Method for improved mobility using hybrid orientation technology (hot) in conjunction with selective epitaxy and related apparatus: A semiconductor apparatus includes a first substrate and a second substrate located over a first portion of the first substrate and separated from the first substrate by a buried layer. The semiconductor apparatus also includes an epitaxial layer located over a second portion of the first substrate and isolated from... Agent: National Semiconductor Corporation

20110089474 - Semiconductor device including misfet and its manufacture method: An active region made of Si or SiGe is formed in a surface part of a substrate. A gate electrode is disposed over the active region. A gate insulating film is disposed between the gate electrode and the substrate. A source and a drain are formed in the surface part... Agent: Fujitsu Semiconductor Limited

20110089475 - Memory device and semiconductor device: A memory device capable of data writing at a time other than during manufacturing is provided by using a memory element including an organic material. In a memory cell, a third conductive film, an organic compound, and a fourth conductive film are stacked over a semiconductor film provided with an... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110089476 - Checkerboarded high-voltage vertical transistor layout: In one embodiment, a transistor fabricated on a semiconductor die includes a first section of transistor segments disposed in a first area of the semiconductor die, and a second section of transistor segments disposed in a second area of the semiconductor die adjacent the first area. Each of the transistor... Agent: Power Integrations, Inc.

20110089477 - Nanostructured mos capacitor: The present invention provides nanostructured MOS capacitor that comprises a nanowire (2) at least partly enclosed by a dielectric layer (5) and a gate electrode (4) that encloses at least a portion of the dielectric layer (5). Preferably the nanowire (2) protrudes from a substrate (12). The gate electrode (4)... Agent: Qunano Ab

20110089478 - Semiconductor device and method for manufacturing the same: It is made possible to provide a method for manufacturing a semiconductor device that has a high-quality insulating film in which defects are not easily formed, and experiences less leakage current. A method for manufacturing a semiconductor device, includes: forming an amorphous silicon layer on an insulating layer; introducing oxygen... Agent: Kabushiki Kaisha Toshiba

20110089480 - Memory and manufacturing method thereof: A memory having isolated dual memory cells is provided. A first isolation wall and a second isolation wall are separately disposed between a source and a drain on a substrate. An isolation bottom layer and a polysilicon layer are orderly disposed on the substrate between the first and the second... Agent: Macronix International Co., Ltd.

20110089479 - Scalable flash eeprom memory cell with floating gate spacer wrapped by control gate and method of manufacture: A polysilicon spacer as a floating gate of a Flash memory device. An advantage of such spacer structure is to reduce a cell size, which is desirable for state-of-the-art Flash memory technology. In a preferred embodiment, the floating gate can be self-aligned to a nearby and/or within a vicinity of... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20110089481 - Mos transistor with elevated gate drain capacity: A MOS transistor having an increased gate-drain capacitance is described. One embodiment provides a drift zone of a first conduction type. At least one transistor cell has a body zone, a source zone separated from the drift zone by the body zone, and a gate electrode, which is arranged adjacent... Agent: Infineon Technologies Austria Ag

20110089482 - Method and apparatus for controlling a circuit with a high voltage sense device: A control circuit with a high voltage sense device. In one embodiment, a circuit includes a first transistor disposed in a first substrate having first, second and third terminals. A first terminal of the first transistor is coupled to an external voltage. A voltage provided at a third terminal of... Agent: Power Integrations, Inc.

20110089483 - Method of forming a power semiconductor device and power semiconductor device: A method of forming a power semiconductor device comprises forming a first semiconductor layer of a first conductivity type extending across the power semiconductor device; forming an epitaxial layer of the first conductivity type over the first semiconductor layer, the epitaxial layer having a doping concentration that increases from a... Agent: Freescale Semiconductor, Inc.

20110089484 - Method and system for metal gate formation with wider metal gate fill margin: A method includes providing a semiconductor substrate having a gate trench and depositing a metal layer, using a physical vapor deposition (PVD) process, over the substrate to partially fill the trench. The metal layer includes a bottom portion and a sidewall portion that is thinner than the bottom portion. The... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110089487 - Semiconductor device: A semiconductor device includes a base layer that has a first conductivity type, a source layer that is formed on the base layer and has a second conductivity type, and an insulating film that is formed on the source layer. The semiconductor device further includes a plurality of gate structures... Agent: Mitsubishi Electric Corporation

20110089485 - Split gate semiconductor device with curved gate oxide profile: A split gate semiconductor device includes a trench gate having a first electrode region and a second electrode region that are separated from each other by a gate oxide layer and an adjacent dielectric layer. The boundary of the gate oxide layer and the dielectric layer is curved to avoid... Agent: Vishay-siliconix

20110089486 - Super-high density trench mosfet: A method, in one embodiment, can include forming a plurality of trenches in a body region for a vertical metal-oxide semiconductor field-effect transistor (MOSFET). In addition, the method can include angle implanting source regions into the body region. Furthermore, dielectric material can be grown within the plurality of trenches. Gate... Agent: Vishay-siliconix

20110089488 - Power device with improved edge termination: A field effect transistor includes an active region and a termination region surrounding the active region. A resistive element is coupled to the termination region, wherein upon occurrence of avalanche breakdown in the termination region an avalanche current starts to flow in the termination region, and the resistive element is... Agent:

20110089489 - Semiconductor device including capacitor element and method of manufacturing the same: A semiconductor device includes a memory region, and a logic region formed on a substrate, in which a trench recess is provided in the substrate in the memory region. A first transistor is provided in the memory region and a second transistor is provided in the logic region. The first... Agent: Renesas Electronics Corporation

20110089490 - Method for fabricating a mos transistor with reduced channel length variation and related structure: According to an exemplary embodiment, a method for fabricating a MOS transistor, such as an LDMOS transistor, includes forming a self-aligned lightly doped region in a first well underlying a first sidewall of a gate. The method further includes forming a self-aligned extension region under a second sidewall of the... Agent: Broadcom Corporation

20110089491 - Power mos electronic device and corresponding realizing method: Power MOS device of the type comprising a plurality of elementary power MOS transistors having respective gate structures and comprising a gate oxide with double thickness having a thick central part and lateral portions of reduced thickness. Such device exhibiting gate structures comprising first gate conductive portions overlapped onto said... Agent: Stmicroelectronics, S.r.l.

20110089492 - High voltage semiconductor device with jfet regions containing dielectrically isolated junctions and method of fabricating the same: A high-voltage field-effect device contains an extended drain or “drift” region including an embedded stack of JFET regions separated by intervening layers of the drift region. Each of the JFET regions is filled with material of an opposite conductivity type to that of the drift region, and the floor and... Agent: Alpha And Omega Semiconductor Inc.

20110089493 - Finfet method and device: A finFET structure is made by forming a fin (14), followed by a gate stack of gate dielectric (16), metal gate layer (18), polysilicon layer (20) and silicon-germanium layer (22). The gate stack is then patterned, and source and drain implants formed in the fin (14) away from the gate.... Agent: Nxp B.v.

20110089494 - Semiconductor device having fuse and protection circuit: A semiconductor device having a semiconductor substrate, an insulating layer, a fuse, a diffusion layer and a resistor. The semiconductor substrate has a first conductivity type. The insulating layer is selectively formed on the surface of the semiconductor substrate. The fuse is formed on the insulating layer. The diffusion layer... Agent: Oki Semiconductor Co., Ltd.

20110089495 - Application of cluster beam implantation for fabricating threshold voltage adjusted fets: Semiconductor structures including a high k gate dielectric material that has at least one surface threshold voltage adjusting region located within 3 nm or less from an upper surface of the high k gate dielectric are provided. The at least one surface threshold voltage adjusting region is formed by a... Agent: International Business Machines Corporation

20110089496 - Semiconductor device and production method: The object to provide a semiconductor device comprising a highly-integrated SGT-based CMOS inverter circuit is achieved by forming an inverter which comprises: a first transistor including; an first island-shaped semiconductor layer; a first gate insulating film; a gate electrode; a first first-conductive-type high-concentration semiconductor layer arranged above the first island-shaped... Agent: Unisantis Electronics (japan) Ltd.

20110089497 - Semiconductor device having nickel silicide layer: A method for manufacturing a semiconductor device includes: forming an isolation region for defining a plurality of active regions in a silicon substrate; doping p-type impurities in at least one of the plurality of active regions to form a p-type well; forming an NMOS gate electrode traversing the p-type well... Agent: Fujitsu Semiconductor Limited

20110089498 - Integration of low and high voltage cmos devices: A method of fabricating a semiconductor device is provided that includes providing a semiconductor substrate having a first portion and a second portion, forming a first transistor in the first portion of the substrate, the first transistor being operable at a first voltage, and forming a second transistor in the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110089500 - Multi-gate semiconductor devices: A semiconductor device includes a substrate, a source region formed over the substrate, a drain region formed over the substrate, a first gate electrode over the substrate adjacent to the source region and between the source and drain regions, and a second gate electrode over the substrate adjacent to the... Agent: Freescale Semiconductor, Inc.

20110089499 - Structure and method for manufacturing asymmetric devices: A plurality of gate structures are formed on a substrate. Each of the gate structures includes a first gate electrode and source and drain regions. The first gate electrode is removed from each of the gate structures. A first photoresist is applied to block gate structures having source regions in... Agent: International Business Machines Corporation

20110089501 - Tunable stressed polycrystalline silicon on dielectrics in an integrated circuit: A method of forming an integrated circuit device is disclosed. A polycrystalline silicon layer is formed in direct contact with a dielectric material so that the dielectric material induces a stress in the polycrystalline silicon layer as the polycrystalline silicon layer is formed. A MOS transistor that includes a gate... Agent:

20110089502 - Multi-layer gate dielectric: A transistor gate dielectric including a first dielectric material having a first dielectric constant and a second dielectric material having a second dielectric constant different from the first dielectric constant.... Agent:

20110089503 - Semiconductor device and method of fabricating the semiconductor device: To provide a semiconductor device prevented from giving a limitation on the sensitivity of HEMS devices due to isolation regions thereof and a method of fabricating the same. The semiconductor device includes: a semiconductor substrate with a recess portion formed in an upper surface; a supporting body provided around the... Agent: Rohm Co., Ltd

20110089504 - Mems process and device: A method of fabricating a micro-electrical-mechanical system (MEMS) transducer comprises the steps of forming a membrane (5) on a substrate (3), and forming a back-volume in the substrate. The step of forming a back-volume in the substrate comprises the steps of forming a first back-volume portion (7a) and a second... Agent:

20110089506 - Intrusion protection using stress changes: The invention relates to a integrated circuit comprising an electronic circuit integrated on a substrate (5), and further comprising protections means for protection of the electronic circuit (25). The protection means comprise: i) a first strained encapsulation layer (10) being provided on a first side of the substrate (5), wherein... Agent: Nxp B.v.

20110089505 - Method for manufacturing a sensor component without passivation, and a sensor component: A sensor component and a method for manufacturing a sensor component, in which a sealing passivation of a sensor layer may be dispensed with. For this purpose, the sensor component includes, in particular, a thin film high-pressure sensor, a deformation body and a piezoresistive sensor layer, which is applied to... Agent:

20110089510 - Magnetic memory cell construction: A magnetic tunnel junction cell having a free layer, a ferromagnetic pinned layer, and a barrier layer therebetween. The free layer has a central ferromagnetic portion and a stabilizing portion radially proximate the central ferromagnetic portion. The construction can be used for both in-plane magnetic memory cells where the magnetization... Agent: Seagate Technology LLC

20110089509 - Magnetic memory with separate read and write paths: Magnetic memory having separate read and write paths is disclosed. The magnetic memory unit includes a ferromagnetic strip having a first end portion with a first magnetization orientation, an opposing second end portion with a second magnetization orientation, and a middle portion between the first end portion and the second... Agent: Seagate Technology LLC

20110089508 - Magnetic tunnel junction structure with perpendicular magnetization layers: Disclosed is a magnetic tunnel junction structure having perpendicular anisotropic free layers, and it could be accomplished to reduce a critical current value required for switching and maintain thermal stability even if a device is fabricated small in size, by maintaining the magnetization directions of the free magnetic layer and... Agent:

20110089507 - Novel bit line preparation method in mram fabrication: A MRAM structure is disclosed that includes a metal contact bridge (MCB) which provides an electrical connection between a MTJ top electrode and an overlying bit line. The MCB has a width greater than a MTJ top electrode and serves as an etch stop during bit line etching to prevent... Agent: Magic Technologies, Inc.

20110089511 - Magnetic random access memory (mram) manufacturing process for a small magnetic tunnel junction (mtj) design with a low programming current requirement: A method of making a magnetic random access memory cell includes forming a magnetic tunnel junction (MTJ) on top of a wafer, depositing oxide on top of the MTJ, depositing a photo-resist layer on top of the oxide layer, forming a trench in the photo-resist layer and oxide layer where... Agent: Avalanche Technology, Inc.

20110089512 - Magneto-impedance sensor element: A magneto-impedance sensor element 1 has a base body 2, a magnetic amorphous wire 3, a coating insulator 4, a detecting coil 5, a terminal base 6 having a terminal mounting surface 61, wire electrode terminals 11 and coil electrode terminals 12 formed on the terminal mounting surface 61, wire... Agent: Aichi Steel Corporation

20110089513 - Semiconductor device and method of manufacturing a semiconductor device: A semiconductor device has an active region formed on a semiconductor substrate, a trench-type element isolation region formed on the semiconductor substrate, and a diffusion region in which fluorine is diffused that surrounds the element isolation region and is formed on the semiconductor substrate so as not to contact the... Agent: Canon Kabushiki Kaisha

20110089514 - Color-optimized image sensor: An image sensor pixel array includes a photoelectric conversion unit comprising a second region in a substrate and vertically below a gate electrode of a transistor. A first region under a top surface of the substrate and above the second region supports a channel of the transistor. A color filter... Agent:

20110089515 - Semiconductor light receiving device: A semiconductor light receiving device includes: a first semiconductor light receiving element that is provided on a semiconductor substrate and has a mesa structure having an upper electrode to be coupled to an electrode wiring of a mounting carrier and a lower electrode; a first mesa that is provided on... Agent: Sumitomo Electric Device Innovations, Inc.

20110089516 - Rectifier: Provided is a rectifier such as a detector in which a cutoff frequency may be increased in a view point different from the reduction in size of the structure. The rectifier includes: a Schottky barrier portion including a Schottky electrode; a barrier portion having a rectifying property with respect to... Agent: Canon Kabushiki Kaisha

20110089517 - Cmos image sensor with heat management structures: An image sensor includes a device wafer substrate of a device wafer, a device layer of the device wafer, and optionally a heat control structure and/or a heat sink. The device layer is disposed on a frontside of the device wafer substrate and includes a plurality of photosensitive elements disposed... Agent: Omnivision Technologies, Inc.

20110089518 - Array of concentric cmos photodiodes for detection and de-multiplexing of spatially modulated optical channels: An octagonal structure of photodiodes using standard CMOS technology has been developed to serve as a de-multiplexer for spatially multiplexed fiber optic communication systems.... Agent:

20110089519 - Chip lead frame and photoelectric energy transducing module: The invention discloses a chip lead frame and a photoelectric energy transducing module. The chip lead frame includes an insulator and a plurality of conductors. The insulator includes a first surface, a second surface, a first recess structure formed on the first surface, a through hole passing through the second... Agent: Neobulb Technologies, Inc.

20110089520 - Growth of monocrystalline gen on a substrate: The present invention relates a method for forming a monocrystalline GeN layer (4) on a substrate (1) comprising at least a Ge surface (3). The method comprises, while heating the substrate (1) to a temperature between 550° C. and 940° C., exposing the substrate (1) to a nitrogen gas flow.... Agent:

20110089521 - Electronic device and method for manufacturing thereof: An electronic device, including a substrate, a functional structure constituting a functional element formed on the substrate, and a cover structure forming a cavity portion in which the functional structure is disposed, is disclosed. In the electronic device, the cover structure includes a laminated structure of an interlayer insulating film... Agent: Seiko Epson Corporation

20110089522 - Semiconductor device and method of manufacturing the same: A semiconductor wafer has a main surface. A main chip region is formed on the main surface. A sub-chip region is smaller in area than the main chip region, and positioned on an edge side of the semiconductor wafer relative to the main chip region. The sub-chip region is identical... Agent: Mitsubishi Electric Corporation

20110089523 - Systems and processes for forming three-dimensional circuits: Provided are systems and processes for forming a three-dimensional circuit on a substrate. A radiation source produces a beam that is directed at a substrate having an isolating layer interposed between circuit layers. The circuit layers communicate with reach other via a seed region exhibiting a crystalline surface. At least... Agent: Ultratech, Inc.

20110089525 - Manufacturing method for semiconductor device and semiconductor device: A trench is formed on a semiconductor substrate with a first insulation film patterned on the semiconductor substrate as a mask; a second insulation film is embedded in the trench and flattened; an upper portion of the first insulation film is selectively removed, and a part of a side face... Agent: Kabushiki Kaisha Toshiba

20110089524 - Semiconductor device and method of manufacturing the same: A semiconductor device and a method of manufacturing the same capable of reducing variations in the thickness of a semiconductor device are provided. The amount of oxygen implanted ions is less than the amount of implanted oxygen ions in the conventional epitaxial SIMOX wafers. Oxygen is ion-implanted into the surface... Agent: Sumco Corporation

20110089526 - Integrated circuit with multi recessed shallow trench isolation: A system and method for forming multi recessed shallow trench isolation structures on substrate of an integrated circuit is provided. An integrated circuit includes a substrate, at least two shallow trench isolation (STI) structures formed in the substrate, an oxide fill disposed in the at least two STI structures, and... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110089527 - Semiconductor device and method for manufacturing: A semiconductor and method for manufacturing a semiconductor device. In one embodiment the method includes providing a semiconductor substrate with a first substrate surface and at least one trench having at least one trench surface. The trench extends from the first substrate surface into the semiconductor substrate. The trench has... Agent: Infineon Technologies Austria Ag

20110089528 - Semiconductor having optimized insulation structure and process for producing the semiconductor: A semiconductor having an optimized insulation structure which is simple and inexpensive to produce and can be made smaller than LOCOS insulation structures is disclosed. An implantation mask on a surface of a semiconductor substrate is used to implant elements into the semiconductor substrate, which elements, on thermal activation, form... Agent: Infineon Technologies Austria Ag

20110089529 - Open cavity leadless surface mountable package for high power rf applications: An RF semiconductor package includes a substrate having generally planar top and bottom surfaces. The substrate includes a metallic base region and one or more metallic signal terminal regions extending from the top surface to the bottom surface, and an insulative material separating the metallic regions from one another. The... Agent: Infineon Technologies North America Corp.

20110089530 - Semiconductor device: This application relates to a semiconductor device comprising a first chip comprising a first electrode on a first face of the first chip, and a second chip attached to the first electrode, wherein the second chip comprises a transformer comprising a first winding and a second winding.... Agent:

20110089531 - Interposer based monolithic microwave integrate circuit (immic): A system is disclosed for IC fabrication, including seating an integrated circuit (“IC”) having at least one contact into a recess of a silicon interposer substrate, applying an insulator in liquid form to fill portions of the recess not otherwise occupied by the IC and to cover a top surface... Agent: Teledyne Scientific & Imaging, LLC

20110089532 - Integrated circuit with esd structure: An integrated circuit includes a semiconductor body of a first conductivity type. The semiconductor body includes a first semiconductor zone of a second conductivity type opposite the first conductivity type. The first semiconductor zone extends to a surface of the semiconductor body. A second semiconductor zone of the first conductivity... Agent: Infineon Technologies Ag

20110089533 - Semiconductor device: An active barrier structure has a p-type region and an n-type region, each of which is in contact with a p-type impurity region and which are ohmic-connected to each other to attain a floating potential. A trench isolation structure is formed between an active barrier region and the other region... Agent: Renesas Electronics Corporation

20110089534 - Semiconductor integrated circuit devices having conductive patterns that are electrically connected to junction regions: A semiconductor integrated circuit device includes a semiconductor substrate; a dummy pattern extending in one direction on the semiconductor substrate; a junction region electrically connecting the dummy pattern to the semiconductor substrate; and a voltage applying unit that is configured to apply a bias voltage to the dummy pattern.... Agent:

20110089535 - Electrostatic discharge protection device: The invention provides an electrostatic discharge (ESD) protection device having an ESD path between a first circuit and a second circuit. The electrostatic discharge protection device includes a first doped region having a first conductive type. A first well has a second conductive type opposite to the first conductive type.... Agent: Silicon Motion, Inc.

20110089537 - Growing process for group iii nitride elements: The disclosure relates to a method for growing an element III nitride, wherein the growth is carried out on a substrate made of a material capable of maintaining the same crystalline structure from the element III nitride growth temperature to room temperature, the substrate being an M-V—O4 alloy, where M... Agent: Universite Montpellier 2 Sciences Et Techniques

20110089536 - Orientation of electronic devices on mis-cut substrates: A microelectronic assembly in which a semiconductor device structure is directionally positioned on an off-axis substrate. In an illustrative implementation, a laser diode is oriented on a GaN substrate wherein the GaN substrate includes a GaN (0001) surface off-cut from the <0001> direction predominantly towards either the <11 20> or... Agent: Cree, Inc.

20110089538 - Low etch pit density (epd) semi-insulating iii-v wafers: Systems and methods of manufacturing wafers are disclosed using a low EPD crystal growth process and a wafer annealing process are provided resulting in III-V/GaAs wafers that provide higher device yields from the wafer. In one exemplary implementation, there is provided a method of manufacturing a group III based material... Agent:

20110089539 - Packaged microelectronic imagers and methods of packaging microelectronic imagers: Methods for forming electrically conductive through-wafer interconnects in microelectronic devices and microelectronic devices are disclosed herein. In one embodiment, a microelectronic device can include a monolithic microelectronic substrate with an integrated circuit has a front side with integrated circuit interconnects thereon. A bond-pad is carried by the substrate and electrically... Agent: Round Rock Research, LLC

20110089541 - Area reduction for electrical diode chips: Using electrical printing technologies to form package level conductor leads for electrical diode circuit, the preferred embodiments of the present invention significantly reduces the areas of surface mount electrical diodes or ESD circuits. Besides area reduction, these methods also provide significant cost saving and reduction in parasitic impedance. Additional cost... Agent:

20110089542 - Area reduction for electrical diode chips: Using electrical printing technologies to form package level conductor leads for electrical diode circuit, the preferred embodiments of the present invention significantly reduces the areas of surface mount electrical diodes or ESD circuits. Besides area reduction, these methods also provide significant cost saving and reduction in parasitic impedance. Additional cost... Agent:

20110089540 - Semiconductor die with integrated electro-static discharge device: A semiconductor die is described. This semiconductor die includes an electro-static discharge (ESD) device with a metal component coupled to an input-output (I/O) pad, and coupled to a ground voltage via a signal line. Moreover, adjacent edges of the metal component and the I/O pad are separated by a spacing... Agent: Sun Microsystems, Inc.

20110089543 - Semiconductor device with a balun: A semiconductor integrated circuit device with a balun which is formed above a conductive semiconductor substrate and which includes a dielectric film, an unbalanced line for transmitting an unbalanced signal, and balanced lines for transmitting a balanced signal. The unbalanced line is placed opposite to the balanced lines via a... Agent: Panasonic Corporation

20110089544 - Package, manufacturing method thereof, and semiconductor device: A package for mounting a semiconductor chip is provided. The package includes a frame member including an aperture, a first lead including a portion connectable to the semiconductor chip and a portion projecting outside from an outer sidewall of the frame member, and a second lead including a portion connectable... Agent: Canon Kabushiki Kaisha

20110089545 - Apparatus and method configured to lower thermal stresses: An apparatus and a method configured to lower thermal stress is disclosed. One embodiment provides a semiconductor chip, a lead frame and a layer structure. The layer structure includes at least a diffusion solder layer and a buffer layer. The layer structure is arranged between the semiconductor chip and the... Agent: Infineon Technologies Ag

20110089547 - Methods and devices for manufacturing cantilever leads in a semiconductor package: A method of manufacturing a semiconductor package includes providing a metallic leadframe having a plurality of cantilever leads and a mounting area for mounting a die, and disposing one or more non-conductive supports adjacent to a recessed surface of the cantilever leads to support the leads during die mount, wire... Agent:

20110089546 - Multiple leadframe package: Apparatuses and methods directed to a semiconductor chip package having multiple leadframes are disclosed. Packages can include a first leadframe having a die attach pad and a first plurality of electrical leads, a second leadframe that is generally parallel to the first leadframe and having a second plurality of electrical... Agent: National Semiconductor Corporation

20110089549 - Semiconductor device: A semiconductor device comprises a lead frame having a die pad portion or a circuit board, one or more semiconductor elements mounted on the die pad portion of the lead frame or on the circuit board, a copper wire that electrically connects electrical joints provided on the lead frame or... Agent: Sumitomo Bakelite Co., Ltd

20110089548 - Semiconductor device and manufacturing method thereof: There are constituted by a tab (1b) on which a semiconductor chip (2) is mounted, a sealing portion (3) formed by resin-sealing the semiconductor chip (2), a plurality of leads (1a) each having a mounted surface (1d) exposed to a peripheral portion of a rear surface (3a) of the sealing... Agent: Renesas Electronics Corporation

20110089550 - Production device, production method, test apparatus and integrated circuit package: Provided is a manufacturing apparatus that manufactures an integrated circuit package by packaging an integrated circuit chip, the manufacturing apparatus comprising a flattening section that flattens the integrated circuit chip; a holding section that holds a base substrate; a transporting section that transports the flattened integrated circuit chip to load... Agent: Advantest Corporation

20110089551 - Semiconductor device with double-sided electrode structure and its manufacturing method: According to the present invention, a recess portion is formed in a package substrate which is formed of a multilayer organic substrate having a multilayer wiring, and an LSI chip is accommodated within the recess portion. Wiring traces are formed on the upper surface of a resin which seals the... Agent: Oki Electric Industry Co., Ltd.

20110089552 - Integrated circuit packaging system with package-on-package stacking and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system including: forming a top package including: providing a through silicon via interposer having a through silicon via; coupling a stacked integrated circuit die to the through silicon via, and testing a top package; forming a base package including: providing a... Agent:

20110089553 - Stack-type solid-state drive: Provided are a stack-type solid-state drive (SSD) capable of reducing a size thereof by mounting semiconductor chips in a recess region formed in a substrate, and a method of fabricating the stack-type SSD. The stack-type SSD includes a substrate including one or more recess regions; one or more passive electronic... Agent: Sts Semiconductor & Telecommunications Co., Ltd.

20110089555 - Area reduction for surface mount package chips: Using side-wall conductor leads insulated by side-wall insulators to form package level conductor leads for active circuits manufactured on silicon substrate, the preferred embodiments of the present invention significantly reduces the areas of surface mount package chips. Besides area reduction, these methods also provide significant cost saving and reduction in... Agent: Uniram Technology Inc.

20110089554 - Integrated circuit packaging system with cavity and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: mounting a substrate-less integrated circuit package, having a terminal having characteristics of an intermetallic compound, over a substrate; connecting the substrate and the substrate-less integrated circuit package; and forming a base encapsulation over the substrate-less integrated circuit package with... Agent:

20110089556 - Leadframe packages having enhanced ground-bond reliability: Various semiconductor package arrangements and methods that improve the reliability of wire bonding a die to ground or other outside contacts are described. In one aspect, selected ground pads on the die are wire bonded to a bonding region located on the tie bar portion of the lead frame. The... Agent: National Semiconductor Corporation

20110089557 - Area reduction for die-scale surface mount package chips: Using side-wall conductor leads to form package level conductor leads for active circuits manufactured on silicon substrate, the preferred embodiments of the present invention significantly reduces the areas of die-scale surface mount package chips. Besides area reduction, these methods also provide significant cost saving and reduction in parasitic impedance.... Agent:

20110089558 - Semiconductor device and a manufacturing method thereof: There is provided a technology capable of reducing the mounting burden on the part of a customer which is a recipient of a package. Over a metal board, a single package and another single package are mounted together via an insulation adhesion sheet, thereby to form one composite package. As... Agent: Renesas Electronics Corporation

20110089559 - Method and installation for producing a semiconductor device, and semiconductor device: A method of producing a semiconductor device is provided, the semiconductor device including a substrate, a semiconductor layer and at least one metallization layer adjacent to at least one element chosen from the substrate and the semiconductor layer, the method including forming at least one metallization layer which, adjacent to... Agent: Applied Materials, Inc.

20110089560 - Non-uniform alignment of wafer bumps with substrate solders: An integrated circuit structure includes a work piece selected from the group consisting of a semiconductor chip and a package substrate. The work piece includes a plurality of under bump metallurgies (UBMs) distributed on a major surface of the work piece; and a plurality of metal bumps, with each of... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110089562 - Semiconductor device having wafer-level chip size package: A semiconductor device including a semiconductor substrate with circuit elements and electrode pads formed on one surface. The surface is covered by a dielectric layer with openings above the electrode pads. A metal layer is included on the dielectric layer and patterned to form a conductive pattern with traces leading... Agent: Oki Semiconductor Co., Ltd.

20110089561 - Semiconductor package and method of manufacturing the same: A semiconductor package has: a first chip; and a second chip. The first chip has: an insulating resin layer formed on a principal surface of the first chip; a bump-shaped first internal electrode group that is so formed in a region of the insulating resin layer as to penetrate through... Agent: Renesas Electronics Corporation

20110089564 - Adhesive on wire stacked semiconductor package: A semiconductor package and a method of producing the same has a substrate. A first semiconductor chip is coupled to a surface of the substrate. The first semiconductor chip has a first and second surfaces which are substantially flat in nature. An adhesive layer is coupled to the second surface... Agent: Amkor Technology, Inc.

20110089563 - Method for manufacturing semiconductor device and semiconductor device: Bump electrodes (conductive members) bonded onto lands disposed at a peripheral portion side than terminals (bonding leads) electrically coupled to pads (electrode pads) of a microcomputer chip (semiconductor chip) are sealed with sealing resin (a sealing body). Thereafter, the sealing resin is ground (removed) partially such that a part of... Agent: Renesas Electronics Corporation

20110089565 - Semiconductor device and electronic apparatus equipped with the semiconductor device: A semiconductor device comprises an IC chip body and a package substrate that has thereon many external electrodes arranged in a two-dimensional grid configuration. Groups of signal lines that are likely to emit noise (noisy signal lines) are separated and spaced apart from groups of signal lines that are susceptible... Agent: Rohm Co., Ltd.

20110089566 - Wire bonding structure and method that eliminates special wire bondable finish and reduces bonding pitch on substrates: A semiconductor package has a semiconductor die disposed on a substrate. A bond wire is connected between a first bonding site on the semiconductor die and a second bonding site on the substrate. The first bonding site is a die bond pad; the second bonding site is a stitch bond.... Agent:

20110089568 - Power semiconductor device and manufacturing method therefor: A power semiconductor device includes a substrate, an element circuit pattern formed on the substrate and made of Cu covered with an electroless Ni—P plating layer, and a power semiconductor element bonded to the element circuit pattern by a solder, wherein the solder is an alloy of Sn, Sb, and... Agent: Senju Metal Industry Co., Ltd.

20110089567 - Production method and production apparatus of tin or solder alloy for electronic components, and solder alloy: The invention provides a technique and a device that dramatically improve joint reliability of miniature joints of fine electronic components. According to the invention, when producing a tin or a solder alloy used for electronic components, an ingot of a tin or a solder alloy is heated, melted and delivered... Agent:

20110089569 - Multilayer wiring, method for placing dummy wiring in multilayer wiring, semiconductor device, and semiconductor device manufacturing method: A multilayer wiring in which plural metal wirings and plural interlayer insulating films are layered, each interlayer insulating film being planarized each time formed, is divided into plural regions. The percentage of an area occupied by each of the metal wirings within each region is obtained for each of the... Agent: Oki Semiconductor Co., Ltd.

20110089572 - Method for fabricating through substrate vias: A method of fabricating through substrate vias is disclosed. In one aspect, vias are etched from the backside of the substrate down to shallow trench isolation (STI) or the pre-metal dielectric stack (PMD). Extra contacts between metal 1 contact pads and the through-wafer vias are fabricated for realizing the contact... Agent: Imec

20110089570 - Multi-layer connection cell: A semiconductor multi-layer connection cell is disclosed that includes configuration layers and “via” layers disposed between the configuration layers to allow configuration of signals at any layer in the connection cell. The layers include column structures extending through the layers. Each column structure includes a hole in a layer that... Agent: Atmel Nantes S.a.s.

20110089574 - Semiconductor device: A semiconductor device having a multilayer interconnect structure allowing heat in an interconnect layer at an intermediate level to be effectively dissipated is provided. A lower-layer interconnect (13), an intermediate interconnect (23), an upper-layer interconnect (33), a first contact via (15) formed to electrically connect the lower-layer interconnect (13) to... Agent: Panasonic Corporation

20110089573 - Semiconductor device and manufacturing method thereof: A semiconductor device includes a first interposer provided with a first chip first interconnection; a first chip arranged to contact the first interposer in one surface of the first chip; a second interposer arranged to contact the other surface of the first chip and provided with a first chip second... Agent: Renesas Electronics Corporation

20110089571 - Semiconductor device, circuit substrate, and electronic device: A semiconductor device has a through electrode formed in a through hole which penetrates a Si substrate from one surface to the other surface of the Si substrate, wherein a rectangular electrode pad is provided on the other surface with an insulation film laid between the electrode pad and the... Agent: Seiko Epson Corporation

20110089575 - Multichip package and method of manufacturing the same: A semiconductor package includes at least one semiconductor chip mounted to a circuit board and separated from the circuit board by a predetermined distance. A support located between the circuit board and the first semiconductor chip supports the first semiconductor chip. The support has first and second ends fixed with... Agent: Samsung Electronics Co., Ltd.

20110089576 - Pad layout structure of a driver ic chip: A pad layout structure of a driver IC chip to be mounted to a liquid crystal display panel. The pad layout structure includes power pad sections placed at respective four corners of the driver IC chip and each having a first power pad for supplying first power to the driver... Agent: Silicon Works Co., Ltd.

20110089577 - Method and structure for bonding flip chip: Provided is a method and structure for bonding a flip chip while increasing the manufacturing yield. In the method, solder bumps are formed on first electrodes and/or second electrodes disposed on first and second substrates, respectively. In addition, the first and second electrodes are arranged to face each other with... Agent: Electronics And Telecommunications Research Institute

20110089578 - Wafer structure: A wafer structure includes a plurality of dies, an edge portion, a passivation layer, and a UV-blocking metal layer. Each of the dies having an integrated circuit formed thereon, and the circuit includes an upmost metal layer that includes bonding pads. A composite dielectric layer corresponding to dielectric layers of... Agent: Macronix International Co., Ltd.

20110089579 - Multi-chip module: A multi-chip module includes: a board; a wiring board disposed on the board and including a wiring pattern; and a plurality of chips disposed on the wiring board. Each of the plurality of chips is connected with at least one of the other chips, and the plurality of chips and... Agent: Fujitsu Semiconductor Limited

20110089580 - Semiconductor device comprising high performance encapsulation resins: A semiconductor device comprising curable polyorganosiloxane composites is provided where the composites contain at least 0.1 wt % of the 4th and/or 13th group elements of the periodic table. The cured polyorganosiloxane composites may be catalyst-free, have increased stability, and can be used as encapsulation resin at a temperature far... Agent:

20110089581 - Semiconductor wafer having scribe lane alignment marks for reducing crack propagation: A wafer including at least a first die and at least a second die, wherein the first die and the second die are separated from each other by an area located between the first die and the second die, is provided. The wafer further includes an alignment mark group used... Agent:

20110084247 - Self-aligned bipolar junction transistors: A plurality of bipolar transistors are formed by forming a common conduction region, a plurality of control regions extending each in an own active areas on the common conduction region, a plurality of silicide protection strips, and at least one control contact region. Silicide regions are formed on the second... Agent:

20110084248 - Cross point memory array devices: Cross point memory arrays with CBRAM and RRAM stacks are presented. A cross point memory array includes a first group of substantially parallel conductive lines and a second group of substantially parallel conductive lines, oriented substantially perpendicular to the first group of substantially parallel conductive lines. An array of memory... Agent: Nanya Technology Corporation

20110084249 - Light-emitting device using clad layer consisting of asymmetrical units: The present invention relates to a light-emitting device using a clad layer consisting of asymmetric units, wherein the clad layer is provided by repeatedly stacking a unit having an asymmetric energy bandgap on upper and lower portions of an active layer, and the inflow of both electrons and holes into... Agent: Wooree Lst Co., Ltd.

20110084250 - Nanoparticle complex, method of manufacturing the same, and device including the nanoparticle complex: A nanoparticle complex, including a semiconductor nanocrystal; and a metal complex ligand on the surface of the semiconductor nanocrystal. The nanoparticle complex may further include a polymer shell contacting the metal complex ligand.... Agent: Samsung Electronics Co., Ltd.

20110084251 - Atomistic quantum dot: A quantum device is provided that includes controllably quantum mechanically coupled dangling bonds extending from a surface of a semiconductor material. Each of the controllably quantum mechanically coupled dangling bonds has a separation of at least one atom of the semiconductor material. At least one electrode is provided for selectively... Agent: National Research Council Of Canada

20110084256 - Condensed-cyclic compound and organic light emitting diode including organic layer containing the condensed-cyclic compound: A condensed-cyclic compound represented by Formula 1 below and an organic light emitting diode including the condensed-cyclic compound:... Agent: Samsung Mobile Display Co., Ltd.

20110084252 - Electronic device: Electronic devices, such as organic thin film transistors, with improved mobility are disclosed. The semiconducting layer comprises layers or striations of an organic semiconductor and graphene, including alternating layers/striations of such materials. The organic semiconductor and graphene layers interact well together because both materials form lamellar sheets. The presence of... Agent: Xerox Corporation

20110084257 - Organic light emitting diode display and method of manufacturing the same: An organic light emitting diode display includes a substrate, a first conductive layer disposed on the substrate, a second conductive layer formed on the first conductive layer, a third conductive layer formed on the first conductive layer or the second conductive layer. A first electrode disposed on the substrate at... Agent: Samsung Mobile Display Co., Ltd.

20110084253 - Organic light emitting diode lighting apparatus and method for manufacturing the same: Disclosed herein is an organic light emitting diode lighting apparatus and a method for manufacturing the same. The organic light emitting diode lighting apparatus may include a transparent substrate main body having a plurality of groove lines formed thereon, an auxiliary electrode formed in at least one of the plurality... Agent: Samsung Mobile Display Co., Ltd.

20110084255 - Organic light-emitting device: An organic light-emitting device including a first electrode and a first layer, wherein the first electrode includes a first element-containing zinc oxide layer and the first layer includes a cyano group-containing compound.... Agent: Samsung Mobile Display Co., Ltd.

20110084258 - Organic light-emitting device: An organic light-emitting device including a substrate; a first electrode on the substrate; a second electrode; an organic layer between the first electrode and the second electrode, the organic layer including an emission layer; and a first layer including a cyano group-containing compound, the first layer being between the first... Agent:

20110084259 - Organic light-emitting diode and method of manufacturing the same: An OLED including an electron transport layer having multi-layered structure and a method of manufacturing the same, the method including simultaneously reciprocating first and second deposition sources that include different deposition materials, across a substrate.... Agent: Samsung Mobile Display Co., Ltd.

20110084261 - Organic thin-film transistor: A bottom-contact type organic thin film transistor comprising at least a gate electrode, an insulator layer, a source electrode, a drain electrode and an organic semiconductor layer, on a substrate, wherein at least one of the source electrode and the drain electrode has a multilayer structure formed by stacking an... Agent: Idemitsu Kosan Co., Ltd.

20110084254 - Polymer and organic light-emitting device including the same: b

20110084260 - Thin film transistor array panel using organic semiconductor and a method for manufacturing the same: The present invention disclosed an organic thin film transistor, an organic thin film transistor array substrate and an organic thin film transistor display. The present invention disclosed organic materials which is proper for the application to a large screen display. The presentation also disclosed structures and a method for manufacturing... Agent: Samsung Electronics Co., Ltd

20110084265 - Light-emitting display device and electronic device including the same: An object is to provide a light-emitting display device in which a pixel including a thin film transistor using an oxide semiconductor has a high aperture ratio. The light-emitting display device includes a plurality of pixels each including a thin film transistor and a light-emitting element. The pixel is electrically... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110084274 - Method of manufacturing p-type zno semiconductor layer using atomic layer deposition and thin film transistor including the p-type zno semiconductor layer: Provided are a method of manufacturing a transparent N-doped p-type ZnO semiconductor layer using a surface chemical reaction between precursors containing elements constituting thin layers, and a thin film transistor (TFT) including the p-type ZnO semiconductor layer. The method includes the steps of: preparing a substrate and loading the substrate... Agent: Electronics And Telecommunications Research Institute

20110084264 - Oxide semiconductor layer and semiconductor device: An object is to provide an oxide semiconductor layer having a novel structure which is preferably used for a semiconductor device. Alternatively, another object is to provide a semiconductor device using an oxide semiconductor layer having the novel structure. An oxide semiconductor layer includes an amorphous region which is mainly... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110084268 - Semiconductor device: It is an object to provide a semiconductor device typified by a display device having a favorable display quality, in which parasitic resistance generated in a connection portion between a semiconductor layer and an electrode is suppressed and an adverse effect such as voltage drop, a defect in signal wiring... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110084273 - Semiconductor device: One of objects is to provide a semiconductor device with stable electric characteristics, in which an oxide semiconductor is used. The semiconductor device includes a thin film transistor including an oxide semiconductor layer, and a silicon oxide layer over the thin film transistor. The thin film transistor includes a gate... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110084263 - Semiconductor device and manufacturing method thereof: It is an object to provide a semiconductor device having a new productive semiconductor material and a new structure. The semiconductor device includes a first conductive layer over a substrate, a first insulating layer which covers the first conductive layer, an oxide semiconductor layer over the first insulating layer that... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110084271 - Semiconductor device and manufacturing method thereof: Disclosed is a highly reliable semiconductor device and a manufacturing method thereof, which is achieved by using a transistor with favorable electrical characteristics and high reliability as a switching element. The semiconductor device includes a driver circuit portion and a pixel portion over one substrate, and the pixel portion comprises... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110084267 - Semiconductor device and method for manufacturing the same: By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed,... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110084272 - Semiconductor device and method for manufacturing the same: An object is to provide a thin film transistor having favorable electric characteristics and a semiconductor device including the thin film transistor as a switching element. The thin film transistor includes a gate electrode formed over an insulating surface, a gate insulating film over the gate electrode, an oxide semiconductor... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110084269 - Semiconductor device and method for manufacturing the semiconductor device: An object is to reduce contact resistance between an oxide semiconductor layer and source and drain electrode layers electrically connected to the oxide semiconductor layer in a thin film transistor including the oxide semiconductor layer. The source and drain electrode layers have a stacked structure of two or more layers.... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110084270 - Semiconductor device and method for manufacturing the semiconductor device: An object is to provide a thin film transistor including an oxide semiconductor layer, in which a material used for the oxide semiconductor layer and a material used for source and drain electrode layers are prevented from reacting with each other. The source and drain electrode layers provided over a... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110084266 - Semiconductor device, display device, and electronic appliance: In a channel protected thin film transistor in which a channel formation region is formed using an oxide semiconductor, an oxide semiconductor layer which is dehydrated or dehydrogenated by a heat treatment is used as an active layer, a crystal region including nanocrystals is included in a superficial portion in... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110084262 - Thin film transistor, method of manufacturing the thin film transistor and organic light emitting display device have the thin film transistor: A thin film transistor for an organic light emitting display device is disclosed. In one embodiment, the thin film transistor includes: a substrate, an active layer formed over the substrate, wherein the active layer is formed of an oxide semiconductor, a gate insulating layer formed over the substrate and the... Agent: Samsung Mobile Display Co., Ltd.

20110084275 - Zno-containing semiconductor layer and zno-containing semiconductor light emitting device: A ZnO-containing semiconductor layer contains Se added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or a semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual... Agent: Stanley Electric Co., Ltd.

20110084277 - Semiconductor memory device and its manufacturing method: A semiconductor memory device has a plurality of word line provided on a semiconductor region, extending in a row direction, a plurality of bit lines provided in the semiconductor region, extending in a column direction, and a plurality of memory elements provided at intersections between the plurality of word lines... Agent: Panasonic Corporation

20110084276 - Thin film transistor and method of fabricating the same: A thin film transistor (TFT) and a method of fabricating the same are disclosed. The TFT includes a substrate, a gate electrode disposed over the substrate, a gate insulating layer disposed over the gate electrode, a semiconductor layer disposed over the gate insulating layer and including a polycrystalline silicon (poly-Si)... Agent: Samsung Mobile Display Co., Ltd.

20110084281 - Light emitting device and electronic equipment: A display device capable of keeping the luminance constant irrespective of temperature change is provided as well as a method of driving the display device. A current mirror circuit composed of transistors is placed in each pixel. A first transistor and a second transistor of the current mirror circuit are... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110084282 - Liquid crystal display device having light blocking line disposed on same layer as gate line: Active matrix display devices having improved opening and contrast ratios utilize light blocking lines to improve display contrast ratios yet position the light blocking lines on the same level of metallization as the gate lines to thereby limit parasitic capacitive coupling between the data lines and the pixel electrodes. The... Agent:

20110084279 - Organic light emitting diode display: An organic light emitting diode display that includes a first electrode arranged on a substrate, an organic emission layer arranged on the first electrode and a second electrode arranged on the organic emission layer, the first electrode includes a first layer, a second layer and a third layer stacked sequentially... Agent: Samsung Mobile Display Co., Ltd.

20110084278 - Thin film transistor and method for fabricating the same: The present invention relates to a thin-film transistor in a liquid crystal display device and a method of fabricating the same, and the thin-film transistor may be configured by including a first gate electrode formed on an insulating substrate; a first gate insulation film formed on the insulating substrate including... Agent:

20110084280 - Thin film transistor substrate, thin film transistor type liquid crystal display device, and method for manufacturing thin film transistor substrate: Provided is a thin film transistor substrate in which there is provided a transparent substrate, on the transparent substrate there are formed a gate electrode, a semiconductor layer, a source electrode, a drain electrode, a transparent pixel electrode, and a transparent electrode, and the transparent pixel electrode is formed with... Agent: Sumitomo Metal Mining Co., Ltd.

20110084283 - Thin film transistor and manufacturing method thereof: A thin film transistor and a manufacturing method thereof are provided. An insulating pattern layer having at least one protrusion is formed on a substrate. Afterwards, at least one spacer and a plurality of amorphous semiconductor patterns separated from each other are formed on the insulating pattern layer. The spacer... Agent: Chunghwa Picture Tubes, Ltd.

20110084285 - Base material for growing single crystal diamond and method for producing single crystal diamond substrate: The present invention is a base material for growing a single crystal diamond comprising: at least a single crystal SiC substrate; and an iridium film or a rhodium film heteroepitaxially grown on a side of the single crystal SiC substrate where the single crystal diamond is to be grown. As... Agent: Shin-etsu Chemical Co., Ltd.

20110084284 - Transistors with semiconductor interconnection layers and semiconductor channel layers of different semiconductor materials: A transistor may include a semiconductor drift layer of a first semiconductor material and a semiconductor channel layer on the semiconductor drift layer. The semiconductor channel layer may include a second semiconductor material different than the first semiconductor material. A semiconductor interconnection layer may be electrically coupled between the semiconductor... Agent:

20110084286 - Donor substrate and method of fabricating organic light emitting diode using the same: A donor substrate for laser induced thermal imaging and a method of fabricating an organic light emitting diode (OLED) using the donor substrate are disclosed. In one embodiment, the donor substrate includes a base film, a light-to-heat conversion layer formed on the base film, a buffer layer formed on the... Agent: Samsung Mobile Display Co., Ltd.

20110084287 - Organic light emitting diode display and method for manufacturing the same: An organic light emitting diode display includes a display substrate including organic light emitting diodes and a pixel defining layer having openings for defining respective light emitting regions of the organic light emitting diodes, an encapsulation substrate disposed to face the display substrate, a sealant disposed along the edge of... Agent: Samsung Mobile Display Co., Ltd.

20110084288 - Organic light emitting diode display and method of manufacturing the same: An organic light emitting diode (OLED) display includes a substrate, a first electrode on the substrate, an emission layer on the first electrode, and a second electrode on the emission layer, the second electrode including a transflective conductive layer and a conductive oxide layer.... Agent:

20110084289 - Active device array substrate and fabrication method thereof: An active device array substrate including a substrate, a plurality of scan lines, a plurality of data lines, a plurality of active devices, a first passivation layer, a transparent pad layer, a plurality of color filter patterns, a second passivation layer, a plurality of pixel electrodes, and a black matrix... Agent: Au Optronics Corporation

20110084292 - Arrays of light emitting devices: Arrays of light-emitting devices, and related components, processes, systems and methods are disclosed.... Agent: Luminus Devices, Inc.

20110084293 - Multi-grain luminescent ceramics for light emitting devices: A ceramic body is disposed in a path of light emitted by a light source. The light source may include a semiconductor structure comprising a light emitting region disposed between an n-type region and a p-type region. The ceramic body includes a plurality of first grains configured to absorb light... Agent: Koninklijke Philips Electronics N.v.

20110084290 - Organic el display and method for manufacturing same: An object of this invention is to provide a top-emission type organic EL display in which filling defects of a resin filler material are alleviated during bonding of an organic EL emission panel and a color conversion filter panel with the resin filler material, as well as to provide a... Agent: Fuji Electric Holdings Co. Ltd.

20110084291 - Organic light emitting diode display: An organic light emitting diode display includes a substrate main body, a plurality of organic light emitting diodes formed on the substrate main body, and a differential capping layer covering the plurality of organic light emitting diodes, the differential capping layer having a plurality of thicknesses. The differential capping layer... Agent: Samsung Mobile Display Co., Ltd.

20110084294 - High voltage wire bond free leds: An LED chip and method of fabricating the same is disclosed that comprises a plurality of sub-LEDs, said sub-LEDs interconnected such that the voltage necessary to drive said sub-LEDs is dependent on the number of said interconnected sub-LEDs and the junction voltage of said sub-LEDs. Each of said interconnected sub-LEDs... Agent: Cree, Inc.

20110084299 - Led light source and manufacturing method for the same: An LED light source can include protection members to protect bonding wires. The LED can include a substrate including electrode patterns, a sub mount substrate located on the substrate, at least one flip LED chip mounted on the sub mount substrate and a phosphor rein covering the LED chip. The... Agent:

20110084295 - Light emitting device: A light emitting device includes a light emitting element, a base, and a transparent layer. The base has an upper side portion including a first portion and a second portion. The first portion includes a mounting region of the light emitting element, and has a first porosity. The second portion... Agent: Kyocera Corporation

20110084296 - Light emitting diode and manufacturing method thereof: A light emitting diode manufacturing method introduces a transparent enclosure to improve the uniformity of coating phosphor, so as to achieve the purposes of enhancing the uniform color temperature and the light emitting efficiency. The manufacturing method is used extensively for packaging various types of light emitting diode chips and... Agent: Intematix Technology Center Corp.

20110084298 - Light emitting diode and method for making same: A light emitting diode comprises a heat conductive layer, a semiconductor layer disposed above the heat conductive substrate and consisting of a p-type semiconductor layer, an active layer and an n-type semiconductor layer, a transparent electrode layer, a current blocking layer and an electrode contact pad. The p-type semiconductor layer... Agent: Hon Hai Precision Industry Co., Ltd.

20110084300 - Light emitting diode device, light emitting apparatus and method of manufacturing light emitting diode device: Provided is a light emitting diode device. The light emitting diode device includes a light emitting diode chip having a first surface on which first and second electrodes are disposed, and a second surface opposing the first surface, a wavelength conversion portion including fluorescent substances and covering the first surface... Agent:

20110084297 - Molded resin product, semiconductor light-emitting source, lighting device, and method for manufacturing molded resin product: A molded resin product or the like that is provided with a phosphor layer made of gel-like or rubber-like resin that can maintain its shape for a long period and that can be implemented easily. The molded resin product (phosphor layer 7) includes a resin member 17 made of a... Agent:

20110084301 - Package-integrated thin film led: LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth... Agent: Koninklijke Philips Electronics N.v.

20110084302 - Wavelength converted light emitting diode with reduced emission of unconverted light: A method for the manufacture of a wavelength converted light emitting device is provided. A light curable coating material is arranged on the outer surface of a wavelength converted light emitting diode. The light curable coating material is cured, in positions where a high intensity of unconverted LED-light encounters the... Agent: Koninklijke Philips Electronics N.v.

20110084304 - Light emitting device and method of forming the same: An embodiment of present invention discloses a light-emitting device comprising a first multi-layer structure comprising a first lower layer; a first upper layer; and a first active layer able to emit light under a bias voltage and positioned between the first lower layer and the first upper layer; a second... Agent: Epistar Corporation

20110084305 - Nitride-based semiconductor light emitting diode: A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a... Agent: Samsung Led Co., Ltd.

20110084303 - Radiant heat structure for pin type power led: The present invention relates to the heat-radiation structure of a pin-type power Light Emitting Diode (LED). The heat-radiation structure includes an LED device, first and second lead frames, a mold unit, and a heat sink. The first lead frame is electrically connected to the LED device, and extended forward to... Agent:

20110084306 - Semiconductor light emitting device: A semiconductor light emitting device and corresponding method of manufacture, where the semiconductor light emitting device includes a light emitting structure, a second electrode layer, an insulating layer, and a protrusion. The light emitting structure comprises a second conductive semiconductor layer, an active layer under the second conductive semiconductor layer,... Agent:

20110084307 - Method for producing group iii nitride semiconductor light-emitting device, group iii nitride semiconductor light-emitting device, and lamp: One object of the present invention is to provide a method for producing a group III nitride semiconductor light-emitting device which has excellent productivity and produce a group III nitride semiconductor light-emitting device and a lamp, a method for producing a group III nitride semiconductor light-emitting device, in which a... Agent: Showa Denko K.k.

20110084308 - Semiconductor arrangement and a method for manufacturing the same: A method for manufacturing a semiconductor arrangement is disclosed. The method comprises forming at least one trench in a dielectric layer, thereby exposing a portion of a semiconductor substrate, forming a silicon-germanium buffer layer at least on the bottom of the at least one trench, forming a germanium seed layer... Agent:

20110084309 - Method for enhancing the reliability of a p-channel semiconductor device and a p-channel semiconductor device made thereof: A method for forming a semiconductor device is disclosed. The device includes a control electrode on a semiconductor P-channel layer having at least a gate dielectric layer. The gate dielectric layer has an exponentially decreasing density of defect levels Et in as function of energy from the band edges of... Agent: Katholieke Universiteit Leuven

20110084310 - Method for obtaining a structured material with through openings, in particular nitrides of type iii semiconductors structured according to photonic crystal patterns: A method of manufacture of a optical, photonic or optoelectronic component, including a so-called photonic slab or membrane that is traversed, in at least one internal region and according to a predetermined pattern, by a plurality of through openings having a micrometric or sub-micrometric transverse dimension, the method having the... Agent: Universite Paris-sud

20110084311 - Group iii-v semiconductor device with strain-relieving interlayers: According to one exemplary embodiment, a group III-V semiconductor device includes at least one transition layer situated over a substrate. The group III-V semiconductor device further includes a first strain-relieving interlayer situated over the at least one transition layer and a second strain-relieving interlayer situated over the first strain-relieving interlayer.... Agent: International Rectifier Corporation

20110084312 - Methods for cell boundary encroachment and layouts implementing the same: A semiconductor device is disclosed to include a plurality of cells. Each of the cells has a respective outer cell boundary defined to circumscribe the cell in an orthogonal manner. Also, each of the cells includes circuitry for performing one or more logic functions. This circuitry includes a plurality of... Agent: Tela Innovations, Inc.

20110084313 - Methods for manufacturing dense integrated circuits: One inventive aspect relates to a method for forming integrated circuits and circuits obtained therewith. The method of forming a circuit pattern in a device layer of a semiconductor substrate comprises decomposing the circuit pattern in two constituent orthogonal subpatterns. The method further comprises transferring the pattern of a first... Agent: Imec

20110084314 - System comprising a semiconductor device and structure: A system includes a semiconductor device. The semiconductor device includes a first single crystal silicon layer comprising first transistors, first alignment marks, and at least one metal layer overlying the first single crystal silicon layer, wherein the at least one metal layer comprises copper or aluminum more than other materials;... Agent: Nupga Corporation

20110084315 - Semiconductor device having silicon on stressed liner (sol): A method of fabricating an integrated circuit and an integrated circuit having silicon on a stress liner are disclosed. In one embodiment, the method comprises providing a semiconductor substrate comprising an embedded disposable layer, and removing at least a portion of the disposable layer to form a void within the... Agent: International Business Machines Corporation

20110084316 - Pickup device and method for manufacturing the same: A pickup device according to the present invention includes a photoelectric conversion portion, a charge holding portion configured to include a first semiconductor region, and a transfer portion configured to include a transfer gate electrode that controls a potential between the charge holding portion and a sense node. A second... Agent: Canon Kabushiki Kaisha

20110084317 - Back-illuminated type solid-state imaging device: A back-illuminated type solid-state imaging device including (a) a semiconductor layer on a front surface side of a semiconductor substrate with an insulation film between them; (b) a photoelectric conversion element that constitutes a pixel in the semiconductor substrate; (c) at least part of transistors that constitute the pixel in... Agent: Sony Corporation

20110084318 - Depleted top gate junction field effect transistor (dtgjfet): A junction field effect transistor semiconductor device and method can include a top gate interposed between a source region and a drain region, and which can extend across an entire surface of the channel region from the source region to the drain region. Top gate doping can be configured such... Agent:

20110084319 - Method of fabricating a silicon tunneling field effect transistor (tfet) with high drive current: A method (and semiconductor device) of fabricating a TFET device provides a source region having at least a portion thereof positioned underneath a gate dielectric. In one embodiment, the TFET includes an N+ drain region and a P+ source region in a silicon substrate, where the N+ drain region is... Agent: Chartered Semiconductor Manufacturing, Ltd.

20110084321 - Semiconductor device and manufacturing method thereof: It is an object of the present invention to provide a semiconductor device where, even in a case of stacking a plurality of semiconductor elements provided over a substrate, the stacked semiconductor elements can be electrically connected through the substrate, and a manufacturing method thereof. According to one feature of... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110084320 - Semiconductor device including metal silicide layer and method for manufacturing the same: A device formed from a method of fabricating a fine metal silicide layer having a uniform thickness regardless of substrate doping. A planar vacancy is created by the separation of an amorphousized surface layer of a silicon substrate from an insulating layer, a metal source enters the vacancy through a... Agent:

20110084322 - Cmos image sensor and manufacturing method thereof: Disclosed is a CMOS image sensor and a manufacturing method thereof. According to an aspect of the present invention, each pixel of CMOS image sensor includes a photo detector that includes an electon Collection layer doped with a concentration of 5×1015/cm3 to 2×1016/cm3; and a transfer transistor that is connected... Agent: Electronics And Telecommunications Research Institute

20110084323 - Transistor performance modification with stressor structures: A transistor structure with stress enhancement geometry aligned above the channel region. Also, a transistor structure with stress enhancement geometries located above and aligned with opposite sides of the channel region. Furthermore, methods for fabricating integrated circuits containing transistors with stress enhancement geometries.... Agent: Texas Instruments Incorporated

20110084326 - Densely-paced films of lanthanide oxide nanoparticles via electrophoretic deposition: A method of forming a film of lanthanide oxide nanoparticles. In one embodiment of the present invention, the method includes the steps of: (a) providing a first substrate with a conducting surface and a second substrate that is positioned apart from the first substrate, (b) applying a voltage between the... Agent: Vanderbilt University

20110084325 - Dram structure with a low parasitic capacitance and method of making the same: An oxide spacer for stack DRAM gate stack is described, including: a semiconductor substrate with a memory array region and a periphery region, a plurality of gates disposed within the memory array region and the periphery region respectively, a silicon oxide spacer disposed on the gates, where the polysilicon contact... Agent:

20110084324 - Radiation hardened mos devices and methods of fabrication: Radiation hardened NMOS devices suitable for application in NMOS, CMOS, or BiCMOS integrated circuits, and methods for fabricating them. A device includes a p-type silicon substrate, a field oxide surrounding a moat region on the substrate tapering through a bird's beak region to a gate oxide within the moat region,... Agent: Texas Instruments Incorporated

20110084327 - 3-d electrically programmable and erasable single-transistor non-volatile semiconductor memory device: A non-volatile memory device includes a source region, a drain region, and a channel region therebetween. The channel region has a length extending from the source region to the drain region and a channel width in the direction perpendicular to the channel length direction. The device includes a floating gate... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20110084328 - Non-volatile memory having nano crystalline silicon hilllocks floating gate: A method for making a non-volatile memory device provides a semiconductor substrate including a surface region and a tunnel dielectric layer overlying the surface region. Preferably the tunnel dielectric layer is a high-K dielectric, characterized by a dielectric constant higher than 3.9. The method forms a source region within a... Agent: Semiconductor Manufacturing International (shangha) Corporation

20110084330 - Local interconnect having increased misalignment tolerance: A method is provided for forming an interconnect in a semiconductor memory device. The method includes forming a pair of source select transistors on a substrate. A source region is formed in the substrate between the pair of source select transistors. A first inter-layer dielectric is formed between the pair... Agent: Spansion LLC

20110084329 - Non-volatile memory device: A non-volatile memory device includes a semiconductor layer including a cell region and a peripheral region, a cell region gate structure disposed in the cell region of the semiconductor layer, and wherein the cell region gate structure includes a tunneling insulating layer and a first blocking insulating layer, a second... Agent:

20110084331 - Semiconductor device: A semiconductor device has a substrate, a source region formed on the surface portion of the substrate, a first insulating layer formed on the substrate, a gate electrode formed on the first insulating layer, a second insulating layer formed on the gate electrode, a body section connected with the source... Agent: Kabushiki Kaisha Toshiba

20110084333 - Power devices with super junctions and associated methods manufacturing: Power devices with super junctions and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a power device includes forming an epitaxial layer on a substrate material and forming a trench in the epitaxial layer. The trench has a first sidewall, a second sidewall, and... Agent:

20110084332 - Trench termination structure: A trench MOS device includes a base semiconductor substrate, an epitaxial layer grown on the base semiconductor substrate, a first trench in the epitaxial layer, and a stepped trench comprising a second trench and a third trench in the epitaxial layer. There is a mesa between the first trench and... Agent: Vishay General Semiconductor, LLC.

20110084334 - Bilateral conduction semiconductor device and manufacturing method thereof: A bilateral conduction semiconductor device and a manufacturing method thereof are provided. The bilateral conduction semiconductor device includes an epitaxial layer having a first conductive type and a first trench, a first gate conductive layer disposed on a sidewall of the first trench, a second gate conductive layer disposed opposite... Agent:

20110084335 - Semiconductor device with drain voltage protection and manufacturing method thereof: A power semiconductor device with drain voltage protection includes a semiconductor substrate, at least a trench gate transistor device and at least a trench ESD protection device. An upper surface of the semiconductor substrate has a first trench and a second trench. The trench gate transistor device is disposed in... Agent:

20110084337 - Semiconductor device and method for manufacturing the same: As for a semiconductor device which is typified by a display device, it is an object to provide a highly reliable semiconductor device to which a large-sized or high-definition screen is applicable and which has high display quality and operates stably. By using a conductive layer including Cu as a... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110084338 - Semiconductor device and method of manufacturing same: An object is to reduce the adverse influence which a portion of a gate insulating layer where the thickness has decreased, that is, a step portion, has on semiconductor element characteristics so that the reliability of the semiconductor element is improved. A semiconductor layer is formed over an insulating surface;... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110084336 - Semiconductor device with stressed fin sections, and related fabrication methods: A method of fabricating a semiconductor device is provided. The method forms a fin arrangement on a semiconductor substrate, the fin arrangement comprising one or more semiconductor fin structures. The method continues by forming a gate arrangement overlying the fin arrangement, where the gate arrangement includes one or more adjacent... Agent: Globalfoundries Inc.

20110084339 - Semiconductor device and method of electrostatic discharge protection therefor: A semiconductor device comprises at least one switching element. The at least one switching element comprises a first channel terminal, a second channel terminal and a switching terminal, the switching element being arranged such that an impedance of the switching element between the first and second channel terminals is dependant... Agent: Freescale Semiconductor, Inc.

20110084341 - Semiconductor device: A semiconductor device includes a substrate having a rectangular shape, and a via hole that has an elliptic shape or a track shape having a linear portion in a long-axis direction of the track shape, a long axis of the elliptic shape or the track shape being arranged in a... Agent: Sumitomo Electric Device Innovations, Inc.

20110084340 - Voids in sti regions for forming bulk finfets: An integrated circuit structure includes a substrate; two insulation regions over the substrate, with one of the two insulation regions including a void therein; and a first semiconductor strip between and adjoining the two insulation regions. The first semiconductor strip includes a top portion forming a fin over top surfaces... Agent:

20110084342 - Semiconductor integrated circuit device: Latchup is prevented from occurring accompanying increasingly finer geometries of a chip. NchMOSFET N1 and PchMOSFET P1 form a CMOS circuit including: NchMOSFET N2 whose gate, drain and back gate are connected to back gate of N1 and PchMOSFET P2 whose gate, drain and back gate are connected to back... Agent: Renesas Electronics Corporation

20110084343 - Monolithic ic and mems microfabrication process: Monolithic IC/MEMS processes are disclosed in which high-stress silicon nitride is used as a mechanical material while amorphous silicon serves as a sacrificial layer. Electronic circuits and micro-electromechanical devices are built on separate areas of a single wafer. The sequence of IC and MEMS process steps is designed to prevent... Agent: Alces Technology, Inc.

20110084345 - Apparatuses for generating electrical energy: Electrical energy generation apparatuses, in which a solar battery device and a piezoelectric device are combined in a single body by using a plurality of nano wires formed of a semiconductor material having piezoelectric properties.... Agent: Samsung Electronics Co., Ltd.

20110084344 - Mems device with a composite back plate electrode and method of making the same: A method of fabricating MEMS device includes: providing a substrate with a first surface and a second surface. The substrate includes at least one logic region and at least one MEMS region. The logic region includes at least one logic device positioned on the first surface of the substrate. Then,... Agent:

20110084346 - Pressure sensor and method of manufacturing the same: The present invention provides a pressure sensor and a method of manufacturing the same, which can change resistance to load smoothly in a relatively small load range and detect the pressure to the extent of relatively large load range. An uneven layer 6 is formed of a resin containing non-conductive... Agent: Marusan Name Co., Ltd.

20110084347 - Magnetic tunnel junction device and method for manufacturing the same: The present invention relates to a magnetic tunnel junction device and a manufacturing method thereof. The magnetic tunnel junction device includes i) a first magnetic layer having an switchable magnetization direction, ii) a nonmagnetic layer provided on the first magnetic layer, iii) a second magnetic layer provided on the nonmagnetic... Agent: Korea Institute Of Science And Technology

20110084348 - Magnetoresistance element, method of manufacturing the same, and storage medium used in the manufacturing method: A magnetoresistance element includes a first crystalline ferromagnetic layer, a tunnel barrier layer, and a second crystalline ferromagnetic layer. Each of the three layers has a polycrystalline structure including an aggregate of columnar crystals. The tunnel barrier layer is a layer of a metal oxide containing B atoms and Mg... Agent: Canon Anelva Corporation

20110084349 - Thermoelectric conversion device: An inverse spin-Hall effect material is provided to at least one end of a thermal spin-wave spin current generating material made of a magnetic dielectric material so that a thermal spin-wave spin current is converted to generate a voltage in the above described inverse spin-Hall effect material when there is... Agent: Keio University

20110084350 - Solid state image capture device and method for manufacturing same: According to one embodiment, a solid state image capture device includes a multilayered interconnect layer, a semiconductor substrate, a pillar diffusion layer and an insulating member. The multilayered interconnect layer includes an interconnect. The semiconductor substrate is provided on the multilayered interconnect layer and the semiconductor substrate has a through-trench.... Agent: Kabushiki Kaisha Toshiba

20110084351 - Back-illuminated type solid-state imaging device: A back-illuminated type solid-state imaging device including (a) a semiconductor layer on a front surface side of a semiconductor substrate with an insulation film between them; (b) a photoelectric conversion element that constitutes a pixel in the semiconductor substrate; (c) at least part of transistors that constitute the pixel in... Agent: Sony Corporation

20110084352 - Back-illuminated type solid-state imaging device: The back-illuminated type solid-state imaging device includes a structure 34 having a semiconductor film 33 on a semiconductor substrate 31 through an insulation film 32, in which a photoelectric conversion element PD that constitutes a pixel is formed in the semiconductor substrate 31, at least part of transistors 15, 16,... Agent: Sony Corporation

20110084353 - Trench schottky rectifier device and method for manufacturing the same: A trench Schottky rectifier device includes a substrate having a first conductivity type, a plurality of trenches formed in the substrate, and an insulating layer formed on sidewalls of the trenches. The trenches are filled with conductive structure. There is an electrode overlying the conductive structure and the substrate, and... Agent: Pfc Device Corporation

20110084354 - Semiconductor device and method of manufacturing a semiconductor device: In a semiconductor device according to the present invention, an electrode layer and a recessed part are formed on a surface of a semiconductor substrate. Further, in the semiconductor substrate, a RESURF layer that is in contact with a bottom surface of the recessed part and the electrode layer is... Agent: Mitsubishi Electric Corporation

20110084355 - Isolation structure for semiconductor device: A semiconductor device is provided. The semiconductor device includes a substrate, an isolation feature disposed on the substrate, and an active area disposed adjacent the isolation feature. The isolation feature may be a shallow trench isolation feature. The STI feature has a first width at the top of the feature... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110084356 - Local buried layer forming method and semiconductor device having such a layer: The present invention discloses a method of forming a local buried layer (32) in a silicon substrate (10), comprising forming a plurality of trenches (12, 22) in the substrate, including a first trench (22) having a width preventing sealing of the first trench in a silicon migration anneal step and... Agent: Nxp B.v.

20110084357 - Self aligned air-gap in interconnect structures: An integrated circuit structure comprising an air gap and methods for forming the same are provided. The integrated circuit structure includes a conductive line; a self-aligned dielectric layer on a sidewall of the conductive line; an air-gap horizontally adjoining the self-aligned dielectric layer; a low-k dielectric layer horizontally adjoining the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110084358 - Apparatus and method for through silicon via impedance matching: Methods and apparatuses for matching impedances in a flip-chip circuit assembly are presented. An apparatus for matching impedances in a flip-chip circuit assembly may include a first circuit associated with a first die and a through silicon via (TSV) coupling the first circuit to a second circuit. The apparatus may... Agent: Qualcomm Incorporated

20110084359 - Semiconductor device: A semiconductor device formed by using semiconductor packages is provided. The semiconductor device includes two semiconductor packages adjacently arranged in opposite directions on an inductive conductor. Terminals of the two semiconductor packages are joined by a third lead. the third lead is arranged substantially in parallel to the inductive conductor.... Agent:

20110084360 - Embedded series deep trench capacitors and methods of manufacture: Trench capacitors and methods of manufacturing the trench capacitors are provided. The trench capacitors are very dense series capacitor structures with independent electrode contacts. In the method, a series of capacitors are formed by forming a plurality of insulator layers and a plurality of electrodes in a trench structure, where... Agent: International Business Machines Corporation

20110084361 - Semiconductor devices having resistors: A semiconductor device having a resistor and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate having a first circuit region and a second circuit region. A lower interlayer insulating layer is provided over the semiconductor substrate. A first hole passing through the lower... Agent: Samsung Electronics Co., Ltd.

20110084362 - Active diode having no gate and no shallow trench isolation: An active diode with fast turn-on time, low capacitance, and low turn-on resistance may be manufactured without a gate and without a shallow trench isolation region between doped regions of the diode. A short conduction path in the active diode allows a fast turn-on time, and a lack of gate... Agent: Qualcomm Incorporated

20110084363 - Compound semiconductor substrate, semiconductor device, and processes for producing them: A compound semiconductor substrate 10 according to the present invention is comprised of a Group III nitride and has a surface layer 12 containing a chloride of not less than 200×1010 atoms/cm2 and not more than 12000×1010 atoms/cm2 in terms of Cl and an oxide of not less than 3.0... Agent: Sumitomo Electric Industries, Ltd

20110084364 - Wafer and method of manufacturing semiconductor device: In a wafer, a first chip region and a second chip region are separated from each other by a dicing region. The dicing region includes: a first center region; a first intermediate region located on the first chip region's side of the first center region; a second intermediate region located... Agent: Renesas Electronics Corporation

20110084365 - Through silicon via (tsv) wire bond architecture: A through silicon via architecture for integrated circuits is provided. The integrated circuit (IC) includes a substrate with a top surface and a bottom surface with circuitry formed on the top surface, a plurality of bonding pads formed along a periphery of the bottom surface, and a backside metal layer... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110084366 - Epitaxial wafer and production method thereof: t

20110084367 - Epitaxial wafer and method of producing the same: A method of producing an epitaxial wafer, comprising: implanting oxygen ions from a surface of a silicon wafer, thereby forming an ion implanted layer in a surface layer of the silicon wafer; after forming the ion implanted layer, implanting boron ions from the surface of the silicon wafer to the... Agent: Sumco Corporation

20110084368 - Overmolded semiconductor package with a wirebond cage for emi shielding: According to one exemplary embodiment, an overmolded package includes a component situated on a substrate. The overmolded package further includes an overmold situated over the component and the substrate. The overmolded package further includes a wirebond cage situated over the substrate and in the overmold, where the wirebond cage surrounds... Agent: Skyworks Solutions, Inc.

20110084369 - Device including a semiconductor chip and a carrier and fabrication method: A description is given of a method. In one embodiment the method includes providing a semiconductor chip with semiconductor material being exposed at a first surface of the semiconductor chip. The semiconductor chip is placed over a carrier with the first surface facing the carrier. An electrically conductive material is... Agent: Infineon Technologies Ag

20110084370 - Semiconductor package and process for fabricating same: A package carrier includes: (a) a dielectric layer defining a plurality of openings; (b) patterned electrically conductive layer, embedded in the dielectric layer and disposed adjacent to a first surface of the dielectric layer; a plurality of electrically conductive posts, disposed in respective ones of the openings, wherein the openings... Agent: Advanced Semiconductor Engineering, Inc.

20110084371 - Modular low stress package technology: A protective modular package cover has first and second fastening sections located at opposing first and second ends with one or more subassembly receiving sections disposed thereto and is configured to fasten the protective modular package cover to a core. Each fastening section has a foot surface located on a... Agent: Rjr Polymers, Inc.

20110084372 - Package carrier, semiconductor package, and process for fabricating same: A package carrier includes: (1) a dielectric layer; (2) a first electrically conductive pattern, embedded in the dielectric layer and disposed adjacent to a first surface of the dielectric layer, and including a plurality of first pads; (3) a plurality of first electrically conductive posts, extending through the dielectric layer,... Agent: Advanced Semiconductor Engineering, Inc.

20110084373 - Integrated circuit package system employing an offset stacked configuration and method for manufacturing thereof: A method for manufacturing an integrated circuit package system includes: providing a base package including a first integrated circuit coupled to a base substrate by an electrical interconnect formed on one side; and mounting an offset package over the base package, the offset package electrically coupled to the base substrate... Agent:

20110084376 - Modular low stress package technology: A protective modular package assembly with one or more subassemblies, each having a base element, a sidewall element coupled to the base element, and a semiconductor device disposed within and coupled to the sidewall element and the base element; a protective modular package cover having fastening sections located at opposing... Agent: Rjr Polymers, Inc.

20110084375 - Semiconductor device package with integrated stand-off: A semiconductor device includes a substrate having first and second major surfaces and conductive traces, and solder balls attached to the second major surface of the substrate. A semiconductor die including an integrated circuit (IC) is attached to one of the major surfaces of the substrate. The IC is electrically... Agent: Freescale Semiconductor, Inc

20110084374 - Semiconductor package with sectioned bonding wire scheme: A semiconductor package includes a carrier substrate having thereon at least one bond finger; a semiconductor die mounted on a top surface of the carrier substrate; at least one active bond pad disposed on the semiconductor die; at least one dummy bond pad disposed on the semiconductor die; a first... Agent:

20110084378 - Semiconductor package with integrated interference shielding and method of manufacture thereof: An integrated electromagnetic interference (EMI) shield for a semiconductor module package. The integrated EMI shield includes a plurality of wirebond springs electrically connected between a ground plane in the substrate of the package and a conductive layer printed on the top of the package mold compound. The wirebond springs have... Agent: Skyworks Solutions, Inc.

20110084377 - System for separating a diced semiconductor die from a die attach tape: A system is disclosed for ejecting a semiconductor die from a tape to which the die is affixed during the wafer dicing process. In embodiments, the system includes an ejector tool including a support table, ejector pins and a pick-up arm. The support table is connected to a vacuum source... Agent:

20110084379 - Semiconductor device having improved heat sink: The semiconductor device includes a substrate, a first semiconductor element, a second semiconductor element, a first heat sink and a second heat sink. The first and the second semiconductor elements are provided on the substrate. The maximum power consumption of the first semiconductor element is lower than that of the... Agent: Renesas Electronics Corporation

20110084380 - Semiconductor packages having passive elements mounted thereonto: A semiconductor package onto which a plurality of passive elements is mounted. A substrate includes a first surface and a second surface. A semiconductor chip is on one of the first surface and the second surface of the substrate. A plurality of passive elements are on the substrate. The plurality... Agent:

20110084381 - Chip having a metal pillar structure: The present invention relates to a chip having a metal pillar structure. The chip includes a chip body, at least one chip pad, a first passivation layer, an under ball metal layer and at least one metal pillar structure. The chip body has an active surface. The chip pad is... Agent:

20110084382 - Chip package and fabrication method thereof: A chip package is disclosed. The package includes a carrier substrate and at least two semiconductor chips thereon. Each semiconductor chip includes a plurality of conductive pads. A position structure is disposed on the carrier substrate to fix locations of the semiconductor chips at the carrier substrate. A fill material... Agent:

20110084387 - Designs and methods for conductive bumps: Methods, techniques, and structures relating to die packaging. In one exemplary implementation, a die package interconnect structure includes a semiconductor substrate and a first conducting layer in contact with the semiconductor substrate. The first conducting layer may include a base layer metal. The base layer metal may include Cu. The... Agent:

20110084388 - Reducing underfill keep out zone on substrate used in electronic device processing: Electronic devices and methods for fabricating electronic devices are described. One method includes providing a substrate with a die attach area, and forming a layer on the substrate outside of the die attach area. The layer may be formed from a fluoropolymer material. The method also includes coupling a die... Agent:

20110084385 - Semiconductor device and information processing system including the same: A semiconductor device includes a plurality of core chips and an interface chip that controls the core chips. Each of the core chips and the interface chip includes plural through silicon vias that penetrate a semiconductor substrate and plural pads respectively connected to the through silicon vias. The through silicon... Agent: Elpida Memeory, Inc.

20110084383 - Semiconductor device and manufacturing method thereof: A semiconductor device includes a first circuit base member including a surface having multiple first electrodes formed thereon, a second circuit base member being provided above the first circuit base member and having first through holes and second through holes formed respectively above the first electrodes, a semiconductor package provided... Agent: Fujitsu Limited

20110084384 - Semiconductor device and method for manufacturing the same: A semiconductor device includes a substrate, a semiconductor chip that is bonded to one of the faces of the substrate via bumps, and has a device formation face facing the one of the faces, and a resin that fills the space between the device formation face of the semiconductor chip... Agent: Renesas Electronics Corporation

20110084386 - Semiconductor device and method of self-confinement of conductive bump material during reflow without solder mask: A semiconductor device has a semiconductor die with a die bump pad. A substrate has a conductive trace with an interconnect site. A conductive bump material is deposited on the interconnect site or die bump pad. The semiconductor die is mounted over the substrate so that the bump material is... Agent: Stats Chippac, Ltd.

20110084390 - Chip design with robust corner bumps: An integrated circuit structure includes a semiconductor chip, which includes a corner, a side, and a center. The semiconductor chip further includes a plurality of bump pad structures distributed on a major surface of a substrate; a first region of the substrate having formed thereon a first bump pad structure... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110084389 - Semiconductor device: The present invention relates to a semiconductor device. The semiconductor device includes a substrate and a chip. The chip is electrically connected to the substrate. The chip includes a chip body, at least one chip pad, a first passivation, an under ball metal layer and at least one metal pillar... Agent:

20110084392 - Electronic structures including conductive layers comprising copper and having a thickness of at least 0.5 micrometers: An electronic structure may include a conductive pad on a substrate, and an insulating layer on the substrate and on the conductive pad. The insulating layer may have a via therein so that a portion of the conductive pad opposite the substrate is free of the insulating layer. A conductive... Agent:

20110084393 - Method of forming electrodeposited contacts: A contact metallurgy structure comprising a patterned dielectric layer having vias on a substrate; a silicide layer of cobalt and/or nickel located at the bottom of vias; a contact layer comprising Ti located in vias on top of the silicide layer; a diffusion layer located in vias and on top... Agent: International Business Machines Corporation

20110084391 - Reducing device mismatch by adjusting titanium formation: An integrated circuit structure includes a semiconductor substrate; a first titanium layer over the semiconductor substrate, wherein the first titanium layer has a first thickness less than 130 Å; a first titanium nitride layer over and contacting the first titanium layer; and an aluminum-containing layer over and contacting the first... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110084396 - Electrical connection for multichip modules: A semiconductor package includes a first semiconductor chip mounted on a substrate and a second semiconductor chip mounted on top of the first semiconductor chip. A plurality of metal lines is deposited on the top of the first chip, and the metal lines are isolated from circuitry in the first... Agent:

20110084395 - Semiconductor package substrate and semiconductor device having the same: A semiconductor device includes a semiconductor chip and a package substrate on which the semiconductor chip is mounted. The package substrate has internal terminals connected to the semiconductor chip, front surface wirings connected to the internal terminals, rear surface wirings connected to external electrodes, and contacts connecting the front surface... Agent: Elpida Memory, Inc.

20110084394 - Semiconductor structure: A semiconductor structure is provided. The semiconductor structure includes a substrate, a dielectric layer, a pad structure and a protection structure. The dielectric layer is disposed on the substrate. The pad structure is disposed in the dielectric layer. The pad structure includes a plurality of first metal layers and a... Agent:

20110084397 - 3d integrated circuit layer interconnect: A three-dimensional 3D interconnect structure with a small footprint is described, useful for connection from above to levels of circuit structures in a multi-level device. Also, an efficient and low cost method for manufacturing the 3D interconnect structure is provided.... Agent: Macronix International Co., Ltd.

20110084401 - Package-on-package system with via z-interconnections and method for manufacturing thereof: A method for manufacturing a package-on-package system includes: providing an interposer substrate; mounting a base substrate under the interposer substrate and having a first integrated circuit die connected thereto; forming an encapsulant between the interposer substrate and the base substrate, the encapsulant encapsulating the first integrated circuit die; and forming... Agent:

20110084402 - Packaged semiconductor assemblies and methods for manufacturing such assemblies: Packaged semiconductor assemblies including interconnect structures and methods for forming such interconnect structures are disclosed herein. One embodiment of a packaged semiconductor assembly includes a support member having a first bond-site and a die carried by the support member having a second bond-site. An interconnect structure is connected between the... Agent: Micron Technology, Inc.

20110084399 - Semiconductor device: A semiconductor device with a transistor region has a first conductor pattern formed within a multilayer interconnect structure positioned under a signal line and above the transistor region. The first conductor pattern is coupled to ground or a power supply and overlaps the transistor region. The signal line overlaps the... Agent: Renesas Electronics Corporation

20110084400 - Semiconductor device and manufacturing method thereof: A semiconductor device includes a substrate, at least one via hole provided on the substrate, a through silicon via provided in the at least one via hole, and an interface chip that is electrically connected to the core chips through the through silicon via. The via hole includes a bowing... Agent: Elpida Memory, Inc.

20110084398 - Semiconductor device comprising an electromagnetic waveguide: A semiconductor device includes a substrate. On at least one face of that substrate, integrated circuits are formed. At least one electromagnetic waveguide is also included, that waveguide including two metal plates that are placed on either side of at least one part of the thickness of the substrate and... Agent: Stmicroelectronics S.a.

20110084403 - Pad bonding employing a self-aligned plated liner for adhesion enhancement: Two substrates are brought together and placed in a plating bath. In one embodiment, a conductive material is plated in microscopic cavities present at the interface between a first metal pad and a second metal pad to form at least one interfacial plated metal liner portion that adheres to a... Agent: International Business Machines Corporation

20110084404 - Semiconductor device: One interface chip and a plurality of core chips are stacked, and these semiconductor chips are electrically connected to each other via a plurality of through silicon vias. A data signal output from a driver circuit is input into the core chip via one of the through silicon vias. An... Agent: Elpida Memory, Inc.

20110084405 - Stacking semiconductor device and production method thereof: In a stacking semiconductor device in which a first-layer and a second-layer semiconductor devices are stacked and bonded with a solder, warpage occurs due to a difference in thermal expansion coefficient of constituent members or a difference in elastic modulus of individual members. Therefore, between the first-layer and the second-layer... Agent: Canon Kabushiki Kaisha

20110084406 - Device and interconnect in flip chip architecture:

20110084407 - System and method for preventing metal corrosion on bond pads: A system and method are disclosed for preventing metal corrosion on bond pads. During manufacture of an integrated circuit device an anti-reflective coating (ARC) layer is applied to a metal stack of a bond pad. A mask and etch process is applied to etch an aperture through the ARC layer... Agent: National Semiconductor Corporation

20110084409 - Semiconductor element mounting board: A semiconductor element mounting board includes: a board having surfaces; a semiconductor element provided at a side of one of the surfaces of the board; a bonding agent layer through which the board and the semiconductor element are bonded together, the bonding agent layer having a storage modulus at 25°... Agent:

20110084408 - Thermosetting die-bonding film: An object of the present invention is to provide a thermosetting die-bonding film that is capable of preventing warping of an adherend by suppressing curing contraction of the film after die bonding, and a dicing die-bonding film. The present invention relates to a thermosetting die-bonding film for adhering and fixing... Agent:

20110084410 - Wiring substrate for a semiconductor chip, and semiconducotor package having the wiring substrate: A wiring substrate for a semiconductor chip includes a substrate, first and second wiring layers and a plurality of first and second bonding pads. The substrate has a first surface and a second surface opposite to the first surface, a window extending from the first surface to the second surface... Agent:

20110084411 - Semiconductor die: A semiconductor die has a polyimide layer disposed on its top surface. At the corners of the die top, the polyimide layer is roughened or patterned, but not enough such that the die top is exposed. The patterned corners enhance adhesion of a mold compound later disposed on the die... Agent: Freescale Semiconductor, Inc

20110084412 - Indexing of electronic devices with multiple weight markers: A solution for indexing electronic devices includes corresponding electronic device including a die integrating an electronic circuit, the die having at least one index including a reference defining an ordered alignment of a plurality of locations on the die and a marker for defining a value of the index according... Agent: Stmicroelectronics S.r.i.

20110084413 - Thermosetting die-bonding film: An object thereof is to provide a thermosetting die-bonding film that is capable of preventing warping of an adherend by suppressing curing contraction of the film after die bonding, and a dicing die-bonding film. The present invention relates to a thermosetting die-bonding film for adhering and fixing a semiconductor element... Agent:

20110079763 - Phase change devices: The present invention is a phase change device with a heater and a selector (e.g., diode) separated by a phase-change alloy. The present invention will find applicability in electronic memory devices.... Agent:

20110079764 - Information recording medium, manufacturing method therefor, and sputtering target: The information recording medium of the present invention includes a recording layer whose phase can be changed by application of electrical energy. The recording layer contains, as a main component, a material consisting of Ge, Te, and Sb. The material has a composition within a region defined by point (a)... Agent: Panasonic Corporation

20110079765 - Infrared detector, infrared detecting apparatus, and method of manufacturing infrared detector: An infrared detector comprises: a reflection portion which transmits far- and middle-infrared rays and which reflects near-infrared and visible rays; a photo-current generating portion having a plurality of layered quantum dot structures in each of which electrons are excited by the far- and middle-infrared rays having passed through the reflection... Agent: National University Corporation Nagoya University

20110079767 - Nitride semiconductor device: A nitride semiconductor device comprises: a layer structure including an active region (102) containing AlxGayIn1-x-yN quantum dots layers (102a), and means (104a,104b) for applying an electric field across the active region to modify the spin orientation of excitons in the quantum dots. The exciton spin lifetime at 300K is, for... Agent:

20110079766 - Process for fabricating iii-nitride based nanopyramid leds directly on a metalized silicon substrate: A nanopyramid LED and method for forming. The nanopyramid LED includes a silicon substrate, a III-nitride layer deposited thereon, a metal layer deposited thereon; and a nanopyramid LED grown in ohmic contact with the metal layer. The nanopyramid LED can be seeded on the III-nitride layer or metal layer. The... Agent:

20110079768 - Photoactive materials containing bulk and quantum-confined semiconductor structures and optoelectronic devices made therefrom: The present invention provides photoactive materials that include quantum-confined semiconductor nanostructures in combination with non-quantum confined and bulk semiconductor structures to enhance or create a type II band offset structure. The photoactive materials are well-suited for use as the photoactive layer in photoactive devices, including photovoltaic devices, photoconductors and photodetectors.... Agent: Innovalight, Inc.

20110079771 - Compound semiconductor device and method of manufacturing the same: An intermediate layer composed of i-AlN is formed between a channel layer and an electron donor layer, a first opening is formed in an electron donor layer, at a position where a gate electrode will be formed later, while using an intermediate layer as an etching stopper, a second opening... Agent: Fujitsu Limited

20110079769 - Nanometric mos transistor with maximized ration between on-state current and off-state current: A MOS transistor having a gate length shorter than twice the de Broglie wavelength of the charge carriers in the channel material, wherein the cross-sectional area of the channel region is decreased in the vicinity of the drain region along at least one dimension to a value smaller than half... Agent:

20110079770 - Preparation of thin film transistors (tfts) or radio frequency identification (rfid) tags or other printable electronics using ink-jet printer and carbon nanotube inks: The invented ink-jet printing method for the construction of thin film transistors using all SWNTs on flexible plastic films is a new process. This method is more practical than all of exiting printing methods in the construction TFT and RFID tags because SWNTs have superior properties of both electrical and... Agent: William Marsh Rice University

20110079772 - Organic light-emitting diode with microcavity including doped organic layers and fabrication process thereof: An organic light emitting diode (OLED) emitting light downward through a transparent substrate. The OLED embeds a microcavity formed between a cathode and an anode and includes a plurality of organic layers including a light emitting layer. The plurality of organic layers include at least a first layer made of... Agent: Astron Fiamm Safety

20110079773 - Selectively functionalized rylene imides and diimides: Disclosed are new selectively functionalized rylene imides and diimides that can exhibit desirable electronic properties and can possess processing advantages including solution-processability and/or good stability at ambient conditions.... Agent:

20110079775 - Solution processable organic semiconductors: Semiconductor material, compositions containing the semiconductor material, semiconductor devices containing the semiconductor material, and methods of making semiconductor devices containing the semiconductor material are described. More specifically, the semiconductor material is a small molecule semiconductor that is an anthracene-based compound (i.e., anthracene derivative) that is substituted with two silylethynyl groups... Agent:

20110079774 - Stacked organic light emitting diode: m

20110079776 - Display device and method of manufacturing the same: A display device includes a gate pattern, a semiconductor pattern, a source pattern and a pixel electrode are provided. The gate pattern is formed on a base substrate and includes a gate line and a gate electrode. The semiconductor pattern is formed on the base substrate having the gate pattern... Agent:

20110079778 - Semiconductor device and manufacturing method thereof: An object is to provide a semiconductor device with stable electric characteristics in which an oxide semiconductor is used. The impurity concentration in the oxide semiconductor layer is reduced in the following manner: a silicon oxide layer including many defects typified by dangling bonds is formed in contact with the... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110079777 - Semiconductor device and method for manufacturing the same: An object is to provide a method for manufacturing a highly reliable semiconductor device which includes a thin film transistor using an oxide semiconductor and having stable electric characteristics. In manufacture of a semiconductor device in which an oxide semiconductor is used for a channel formation region, after an oxide... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110079779 - Shape characterization with elliptic fourier descriptor for contact or any closed structures on the chip: Shapes and orientations of contacts or other closed contours on an integrated circuit are characterized by calculating Elliptic Fourier descriptors. The descriptors are then used for generating design rules for the integrated circuit and for assessing process capability for the manufacturing of the integrated circuit. Monte Carlo simulation can be... Agent: Globalfoundries Inc.

20110079780 - Method of crystallizing amorphous semiconductor film, thin-film transistor, semiconductor device, display device, and method of manufacturing the same: A method of crystallizing an amorphous semiconductor film, the method comprising the steps of: forming a gate electrode on a transparent insulating substrate; forming a gate insulating film on the transparent insulating substrate and on an upper part of the gate electrode; forming an amorphous semiconductor film on the gate... Agent: Mitsubishi Electric Corporation

20110079783 - Array substrate for organic electroluminescent device: An array substrate for an organic electroluminescent device includes a substrate; first and second gate electrodes; first and second gate insulating layers; first and second active layers; an interlayer insulating layer; first to fourth ohmic contact layers; first and second source electrodes; first and second drain electrodes; a data line... Agent:

20110079782 - Display substrate, method of manufacturing the display substrate, and display device having the display substrate: A display substrate includes a base substrate, a first dielectric layer, a first lattice pattern, a second lattice pattern, and a second dielectric layer. The first lattice pattern is disposed on the first dielectric layer at a first color pixel region. The first lattice pattern includes a plurality of first... Agent:

20110079781 - Pixel structure having capacitor compensation: A pixel structure having capacitor compensation includes a thin-film transistor, and the thin-film transistor includes a source electrode, a drain electrode, a semiconductor layer and a gate electrode. The gate electrode includes a bar-shaped main part, and at least a protrusion part or two indention parts. One of the characteristics... Agent:

20110079785 - Thin film transistor substrate: A thin film transistor (TFT) substrate includes: a plurality of gate wirings; a plurality of data wirings insulatedly crossing the gate wirings to define a plurality of pixels; a plurality of common voltage lines formed along edges of pixels and mutually connected in an extending direction of the gate wirings;... Agent: Lg. Philips Lcd Co., Ltd.

20110079784 - Thin film transistor, method of manufacturing the thin film transistor and organic light emitting display device having thin film transistor: Embodiments relate to a thin film transistor using an oxide semiconductor as an active layer, a method of manufacturing the thin film transistor, and an organic light emitting display device having the thin film transistor. In one embodiment, the thin film transistor includes a substrate, a first gate electrode formed... Agent: Samsung Mobile Display Co., Ltd.

20110079787 - Array substrate for display device and method of fabricating the same: An array substrate for a display device includes: a substrate; first and second gate electrodes of impurity-doped polycrystalline silicon on the substrate; a gate insulating layer on the first and second gate electrodes; first and second active layers of intrinsic polycrystalline silicon on the gate insulating layer, the first and... Agent:

20110079786 - Organic light emitting diode display and method of manufacturing the same: An organic light emitting diode display includes a substrate, a semiconductor layer on the substrate, the semiconductor layer including an impurity-doped polycrystalline silicon layer, a first capacitor electrode on the substrate main body, the first capacitor electrode including an impurity-doped polycrystalline silicon layer, and bottom surfaces of the first capacitor... Agent:

20110079788 - Semiconductor device and manufacturing method thereof: A charge retention characteristic of a nonvolatile memory transistor is improved. A first insulating film that functions as a tunnel insulating film, a charge storage layer, and a second insulating film are sandwiched between a semiconductor substrate and a conductive film. The charge storage layer is formed of two silicon... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110079789 - Display panel: A display panel includes a plurality of pads, a plurality of first contacts connected to the pads, a plurality of second contacts provided so as to be opposed to the plurality of first contacts, a polysilicon layer configured to form a plurality of polysilicon films to connect the plurality of... Agent: Hitachi Displays, Ltd.

20110079790 - Group iii nitride semiconductor element and epitaxial wafer: A primary surface 23a of a supporting base 23 of a light-emitting diode 21a tilts by an off-angle of 10 degrees or more and less than 80 degrees from the c-plane. A semiconductor stack 25a includes an active layer having an emission peak in a wavelength range from 400 nm... Agent: Sumitomo Electric Industries, Ltd.

20110079791 - Betavoltaic cell: High aspect ratio micromachined structures in semiconductors are used to improve power density in Betavoltaic cells by providing large surface areas in a small volume. A radioactive beta-emitting material may be placed within gaps between the structures to provide fuel for a cell. The pillars may be formed of SiC.... Agent: Cornell Research Foundation, Inc.

20110079794 - Method for manufacturing electronic devices integrated in a semiconductor substrate and corresponding devices: A method manufactures a vertical power MOS transistor on a semiconductor substrate comprising a first superficial semiconductor layer of a first conductivity type, comprising: forming trench regions in the first semiconductor layer, filling in said trench regions with a second semiconductor layer of a second conductivity type, to form semiconductor... Agent: Stmicroelectronics S.r.l.

20110079792 - Semiconductor device and method of fabricating the semiconductor device: Provided are a semiconductor device and a method of fabricating the semiconductor device, the semiconductor device including: a source trace, a drain trace, and a gate trace placed on a substrate; a transistor which is placed on the drain trace and includes a source pad and a gate pad; insulating... Agent: Rohm Co., Ltd.

20110079795 - Semiconductor light emitting device, illumination module, illumination apparatus, method for manufacturing semiconductor light emitting device, and method for manufacturing semiconductor light emitting element: A semiconductor light emitting device (10) is provided with a base substrate (12) and three LED chips (14A, 14B, and 14C) disposed on the base substrate (12). Each LED chip (14A, 14B, and 14C) includes a semiconductor multilayer structure (20) and has a rhombus shape with interior angles of approximately... Agent: Panasonic Corporation

20110079793 - Semiconductor substrate and its manufacturing method: A semiconductor substrate includes: a substrate having a single crystal silicon on at least one surface thereof; a buffer layer that is provided on the single crystal silicon and has at least one cobalt silicide layer primarily containing cobalt silicide; and a silicon carbide single crystal film provided on the... Agent: Seiko Epson Corporation

20110079796 - Nano structured leds: An embodiment relates to a nanowire-containing LED device with optical feedback comprising a substrate, a nanowire protruding from a first side the substrate, an active region to produce light, a optical sensor and a electronic circuit, wherein the optical sensor is configured to detect at least a first portion of... Agent: Zena Technologies, Inc.

20110079797 - Display device: A display device includes an array of pixels including a plurality of organic EL elements each having a pair of electrodes and an organic compound layer including a light-emitting layer and disposed between the pair of electrodes and includes a protective layer disposed on the plurality of the organic EL... Agent: Canon Kabushiki Kaisha

20110079798 - Light emitting apparatus: A light emitting apparatus includes a plurality of single crystal semiconductor thin films that emit light. The single crystal semiconductor thin films are secured in intimate contact to the surface of a substrate or a bonding layer formed on the substrate. A first conductive electrode is formed on the single... Agent: Oki Data Corporation

20110079799 - Anisotropic conductive film and display device having the same: An anisotropic conductive film (ACF) is disclosed. The ACF includes a film, an adhesive layer positioned on the film, and one or more conductive balls within the adhesive layer. The conductive balls include a first core part having a first hardness, a second core part covering the first core part... Agent: Samsung Mobile Display Co., Ltd.

20110079800 - Light emitting element:

20110079803 - Carrying structure of semiconductor: A carrying structure of semiconductor includes a carrier made of a plastic material with a heat conduction region, each surface of the carrier has an interface layer formed on, and an electrically insulation circuit and a metal layer are defined on the interface layer. The insulation circuit is located on... Agent:

20110079802 - Light emitter: Embodiments of light sources are disclosed herein. An embodiment of the light source comprises a lead frame having a first side and a second side. A hole extends through the lead frame between the first side and the second side. An adhesive is located in the hole and extends beyond... Agent: Avago Technologies EcbuIP(singapore) Pte. Ltd.

20110079812 - Light emitting device and method for manufacturing the same: Disclosed are a light emitting device and a method for manufacturing the same. The light emitting device includes a substrate having a lead frame, a light emitting diode mounted on the substrate, a mold member formed on the substrate and the light emitting diode, and a reflecting member having an... Agent:

20110079808 - Light emitting diode: A light emitting diode is provided, including an LED chip, a reflector, a lens, a circuit plate, a circuit substrate and an electrical conductivity device. The LED chip is disposed in the reflector and the lens is disposed on the reflector, covering the reflector and the LED chip. The LED... Agent: Everlight Electronics Co., Ltd.

20110079805 - Light-emitting diode and method for manufacturing the same: A light-emitting diode and a method for manufacturing the same are described. The light-emitting diode includes a bonding substrate, a first conductivity type electrode, a bonding layer, an epitaxial structure, a second conductivity type electrode, a growth substrate and an encapsulant layer. The first conductivity type electrode and the bonding... Agent:

20110079806 - Light-emitting diode structure: A light-emitting diode structure is provided. The light-emitting diode structure includes a light-emitting diode chip, a lead frame for electrically connecting and supporting the light-emitting diode chip, and a lens covering the light-emitting diode chip and to partially cover the lead frame. A recess disposed on the upper portion of... Agent:

20110079807 - Light-emitting diode structure: A light-emitting diode structure includes a base with a recessed portion, a light-emitting chip and a light-transmissive block. The light-emitting chip disposed in the recessed portion of the base and emits a light beam. The light-transmissive block disposed on the base covers the recessed portion and the light-emitting chip, so... Agent:

20110079809 - Optical module installing optical device with identifying mark visually inspected after assembly thereof: An optical module is described, where the optical module installs an optical device whose identification mark is able to be distinguished even after the optical device is installed in the optical module. The identifying mark of the optical device is formed in a position able to be inspected from the... Agent: Sumitomo Electric Industries, Ltd.

20110079801 - Optoelectronic devices with laminate leadless carrier packaging in side-looker or top-looker device orientation: A laminate leadless carrier package comprising an optoelectronic chip, a substrate supporting the chip, the substrate comprising a plurality of conductive and dielectric layers; a wire bond coupled to the optoelectronic chip and a wire bond pad positioned on the top surface of the substrate; an encapsulation covering the optoelectronic... Agent:

20110079810 - Optoelectronic semiconductor chip comprising a reflective layer: An optoelectronic semiconductor chip is specified, comprising a first contact location (1) and a second contact location (2), and a reflective layer (3), which is directly electrically conductively connected to the second contact location. The reflective layer contains a metal that tends toward migration, and the reflective layer is arranged... Agent: Osram Opto Semiconductors Gmbh

20110079804 - Polarized light emitting diode device and method for manufacturing the same: The present invention relates to a polarized light emitting diode (LED) device and the method for manufacturing the same, in which the LED device comprises: a base, a light emitting diode (LED) chip, a polarizing waveguide and a packaging material. In an exemplary embodiment, the LED chip is disposed on... Agent: Industrial Technology Research Institute

20110079811 - Semiconductor chip assembly with bump/base heat spreader and dual-angle cavity in bump: A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace and an adhesive. The heat spreader includes a bump that includes first, second and third bent corners that shape a cavity. The conductive trace includes a pad and a terminal. The semiconductor device is located within... Agent:

20110079813 - Vertical gallium nitride-based light emitting diode and method of manufacturing the same: A method of manufacturing a vertical GaN-based LED comprises forming a light emission structure in which an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer are sequentially laminated on a substrate; etching the light emission structure such that the light emission structure is divided into... Agent: Samsung Electro-mechanics Co., Ltd.

20110079814 - Light emitted diode substrate and method for producing the same: A method for producing the LED substrate has steps of: p providing a conductive metallic board, forming multiple grooves in a top of the conductive metallic board; protecting the conductive metallic board from corrosion, forming an etched substrate with circuits and wires for plating on the conductive metallic board, electroless... Agent:

20110079815 - Organic electroluminescence device and manufacturing method thereof: According to one embodiment, an organic EL device includes an insulating substrate, a pixel electrode disposed above the insulating substrate, an organic layer disposed on the pixel electrode, a counter-electrode disposed on the organic layer, at least one of a first recess portion in which the organic layer and the... Agent:

20110079816 - Optical-semiconductor encapsulating material: The present invention relates to a sheet-shaped optical-semiconductor encapsulating material including: a first resin layer containing inorganic particles; and a second resin layer containing a phosphor and being superposed directly or indirectly on the first resin layer, and relates to a kit for optical-semiconductor encapsulation including: a sheet-shaped molded body... Agent: Nitto Denko Corporation

20110079817 - Light-emitting element and light-emitting device: An object is to provide a highly functional and reliable light-emitting element and light-emitting device with lower power consumption and high emission efficiency. The light-emitting element has an EL layer that has a stacked structure including a light-emitting element containing an organic compound and a functional layer having separate functions... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110079818 - Semiconductor circuit including electrostatic discharge circuit having protection element and trigger transistor: A semiconductor circuit includes a first pad for a first power source, a second pad for a second power source, a third pad for an input/output signal, a protection element arranged between the first pad and the third pad, and a transistor functioning as a trigger element for use in... Agent: Renesas Electronics Corporation

20110079819 - Igbt with fast reverse recovery time rectifier and manufacturing method thereof: An IGBT with a fast reverse recovery time rectifier includes an N-type drift epitaxial layer, a gate, a gate insulating layer, a P-type doped base region, an N-type doped source region, a P-type doped contact region, and a P-type lightly doped region. The P-type doped base region is disposed in... Agent:

20110079820 - Device with self aligned stressor and method of making same: A method includes providing a substrate comprising a substrate material, a gate dielectric film above the substrate, and a first spacer adjacent the gate dielectric film. The spacer has a first portion in contact with a surface of the substrate and a second portion in contact with a side of... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20110079821 - Integrated devices on a common compound semiconductor iii-v wafer: A method of fabricating an integrated circuit on a compound semiconductor III-V wafer including at least two different types of active devices by providing a substrate; growing a first epitaxial structure on the substrate; growing a second epitaxial structure on the first epitaxial structure; and processing the epitaxial structures to... Agent: Emcore Corporation

20110079822 - Compound semiconductor device and manufacturing method: A compound semiconductor device includes an electron transit layer; an electron supply layer formed over the electron transit layer; a first recessed portion and a second recessed portion formed in the electron supply layer; a chemical compound semiconductor layer including impurities that buries the first recessed portion and the second... Agent: Fujitsu Limited

20110079823 - Vertical transistor and array of vertical transistor: A vertical transistor includes a substrate, a gate, a source region, a drain region, a channel region and a gate dielectric layer. A trench is formed in the substrate, and the gate is disposed in the trench. The source region is disposed in the substrate beneath the gate. The drain... Agent: Nanya Technology Corporation

20110079824 - Alternate 4-terminal jfet geometry to reduce gate to source capacitance: A 4-Terminal JFET includes a substrate having a first conduction type and an upper layer having a second, opposite, conduction type over the substrate. A gate and a source are embedded in the upper layer. A gate pad is electrically connected to the gate. A region, which has a first... Agent:

20110079825 - Cascoded high voltage junction field effect transistor: A cascoded junction field transistor (JFET) device comprises a first stage high voltage JFET cascoded to a second stage low voltage JFET wherein one of the first and second stages JFET is connected to a drain electrode of another JFET stage.... Agent: Alpha And Omega Semiconductor Incorporated

20110079829 - Finfets and methods for forming the same: A Fin field effect transistor (FinFET) includes a fin-channel body over a substrate. A gate electrode is disposed over the fin-channel body. At least one source/drain (S/D) region is disposed adjacent to the fin-channel body. The at least one S/D region is substantially free from including any fin structure.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110079828 - Metal gate fet having reduced threshold voltage roll-off: A structure and method to create a metal gate having reduced threshold voltage roll-off. A method includes: forming a gate dielectric material on a substrate; forming a gate electrode material on the gate dielectric material; and altering a first portion of the gate electrode material. The altering causes the first... Agent: International Business Machines Corporation

20110079830 - Metal gate structure and method of manufacturing same: A method of manufacturing a metal gate structure includes providing a substrate (110) having formed thereon a gate dielectric (120), a work function metal (130) adjacent to the gate dielectric, and a gate metal (140) adjacent to the work function metal; selectively forming a sacrificial capping layer (310) centered over... Agent:

20110079831 - Metal oxide semiconductor field effect transistors (mosfets) including recessed channel regions: Unit cells of metal oxide semiconductor (MOS) transistors are provided having an integrated circuit substrate and a MOS transistor on the integrated circuit substrate. The MOS transistor includes a source region, a drain region and a gate. The gate is between the source region and the drain region. A channel... Agent:

20110079826 - Semiconductor device, method for fabricating the same and apparatus for fabricating the same: A method for fabricating a semiconductor device includes forming a gate electrode on a surface of a substrate via a gate insulating film, forming an insulating film on a side surface of the gate electrode, and exposing an oxygen plasma onto the surface of the substrate. An electron temperature of... Agent: Tokyo Electron Limited

20110079827 - Structure and method to create a damascene local interconnect during metal gate deposition: A method and structure to create damascene local interconnect during metal gate deposition. A method includes: forming a gate dielectric on an upper surface of a substrate; forming a mandrel on the gate dielectric; forming an interlevel dielectric (ILD) layer on a same level as the mandrel; forming a trench... Agent: International Business Machines Corporation

20110079832 - Solid-state image pickup device, image pickup apparatus including the same, and method of manufacturing the same: A solid-state image pickup device includes: a semiconductor substrate; and a plurality of pixel circuits formed on the semiconductor substrate; each of the plurality of pixel circuits formed on the semiconductor substrate including a photoelectric conversion element, a first buried gate electrode formed adjacent to the photoelectric conversion element, a... Agent: Sony Corporation

20110079833 - Semiconductor device and method for manufacturing same: A hard mask material film is formed on a semiconductor substrate and a recess is formed immediately below an opening in an upper surface of the semiconductor substrate. Next, a p-type region is formed immediately below the recess by implanting impurities into an imaging region using the hard mask material... Agent: Kabushiki Kaisha Toshiba

20110079834 - Semiconductor integrated circuit device: A semiconductor integrated circuit device has: a MISFET having source/drain diffusion layers; first plugs respectively connected to the source/drain diffusion layers; a first interconnection connected to one of the source/drain diffusion layers through the first plug; a second plug electrically connected to the other Of the source/drain diffusion layers through... Agent: Renesas Electronics Corporation

20110079835 - Semiconductor device including memory cell having charge accumulation layer: A semiconductor device includes MOS transistors, capacitor elements, a voltage generating circuit, a contact plug, and a memory cell. The MOS transistor and the capacitor element are formed on a first one of the element regions and a second one of the element regions, respectively. In the voltage generating circuit,... Agent:

20110079836 - Dram cell with double-gate fin-fet, dram cell array and fabrication method thereof: A transistor structure includes a semiconductor substrate having a top surface and sidewalls extending downward from the top surface, wherein each of the sidewall comprises a vertical upper sidewall surface and a lower sidewall recess laterally etched into the semiconductor substrate. A trench fill dielectric region is inlaid into the... Agent:

20110079837 - Capacitor, method of increasing a capacitance area of same, and system containing same: A capacitor includes a substrate (110, 210), a first electrically insulating layer (120, 220) over the substrate, and a fin (130, 231) including a semiconducting material (135) over the first electrically insulating layer. A first electrically conducting layer (140, 810) is located over the first electrically insulating layer and adjacent... Agent:

20110079838 - Non-volatile memory device: A method of fabricating a semiconductor device includes forming a fin-shaped active region including opposing sidewalls and a surface therebetween protruding from a substrate, forming a gate structure on the surface of the active region, and performing an ion implantation process to form source/drain regions in the active region at... Agent: Samsung Electronics Co., Ltd.

20110079839 - Non-volatile memory devices having reduced susceptibility to leakage of stored charges and methods of forming same: Provided is a semiconductor device. The semiconductor device includes a substrate, a tunnel insulating layer, a charge storage pattern, a blocking layer, a gate electrode. The tunnel insulating layer is disposed over the substrate. The charge storage pattern is disposed over the tunnel insulating layer. The charge storage pattern has... Agent:

20110079840 - Memory cell and manufacturing method thereof and memory structure: A memory cell is provided. The memory cell includes a substrate, an isolation layer, a gate, a charge storage structure, a first source/drain region, a second source/drain region and a channel layer. The isolation layer is disposed over the substrate. The gate is disposed over the isolation layer. The charge... Agent: Macronix International Co., Ltd.

20110079841 - Semiconductor device: There is provided a semiconductor device which has a CMOS inverter circuit and which can accomplish high-integration by configuring an inverter circuit with a columnar structural body. A semiconductor device includes a columnar structural body which is arranged on a substrate and which comprises a p-type silicon, an n-type silicon,... Agent:

20110079842 - Semiconductor device: A semiconductor device includes a gate electrode GE electrically connected to a gate portion which is made of a polysilicon film provided in the inside of a plurality of grooves formed in a striped form along the direction of T of a chip region CA wherein the gate electrode GE... Agent: Renesas Electronics Corporation

20110079843 - Power semiconductor devices, methods, and structures with embedded dielectric layers containing permanent charges: Power devices using refilled trenches with permanent charge at or near their sidewalls. These trenches extend vertically into a drift region.... Agent: Maxpower Semiconductor, Inc.

20110079845 - Planar tmbs rectifier: A monolithically integrated trench FET and Schottky diode includes a plurality of trenches extending into a FET region and a Schottky region of a semiconductor layer. A trench in the Schottky region includes a dielectric layer lining the trench sidewalls, and a conductive electrode having a top surface that is... Agent:

20110079844 - Trench mosfet with high cell density: A trench MOSFET with high cell density is disclosed where there is a heavily doped contact region on the top surface of mesas between a pair of gate trenches. The present invention can prevent the degradation of avalanche capability when shrinking the device in prior art.... Agent: Force Mos Technology Co. Ltd.

20110079846 - High voltage devices, systems, and methods for forming the high voltage devices: A high voltage (HV) device includes a gate dielectric structure over a substrate. The gate dielectric structure has a first portion and a second portion. The first portion has a first thickness and is over a first well region of a first dopant type in the substrate. The second portion... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110079847 - Semiconductor device: Provided is a semiconductor device capable of easily setting a holding voltage with a low trigger voltage by locally forming a P-type diffusion layer between N-type source and drain diffusion layers of an NMOS transistor having a conventional drain structure used as an electrostatic protective element of the semiconductor device.... Agent:

20110079848 - Semiconductor device with dummy gate electrode and corresponding integrated circuit and manufacturing method: A field effect transistor semiconductor device configuration is described, which is particularly suitable for use in DC: DC converters associated with logic circuitry. The device includes a first gate electrode (18) which extends adjacent to its channel-accommodating region (14) and a second, dummy gate electrode (30) which extends adjacent to... Agent: Nxp B.v.

20110079849 - Lateral-diffusion metal-oxide-semiconductor device: A lateral-diffusion metal-oxide-semiconductor device includes a source in a racetrack shaped active area, a first field oxide region isolating and surrounding the racetrack shaped active area, a racetrack shaped gate surrounding the source, and a drain disposed at one side of the gate opposite to the source. The source includes... Agent:

20110079850 - Semiconductor structure including high voltage device: A high voltage device includes a substrate with a device region defined thereon. A gate stack is disposed on the substrate in the device region. A channel region is located in the substrate beneath the gate stack, while a first diffusion region is located in the substrate on a first... Agent: Globalfoundries Singapore Pte. Ltd.

20110079853 - Liquid crystal display and fabrication method thereof: A method for fabricating an LCD includes: providing a substrate with a thin film transistor (TFT) part defined thereon; forming a metallic film for a gate electrode on the substrate; etching the metallic film through a first printing process to form a gate electrode; sequentially forming a gate insulating layer,... Agent: Lg Display Co., Ltd.

20110079852 - Method of fabricating a semiconductor device: The present disclosure provides a semiconductor device and method of fabricating a semiconductor device. In an embodiment, the semiconductor device is a finFET device. In an embodiment, the semiconductor device is a silicon on insulator (SOI) device. A method of fabricating the semiconductor device includes providing a substrate, forming an... Agent: Taiwan Semiconductor Manufacturing Company, Ltd., ("tsmc")

20110079851 - Split level shallow trench isolation for area efficient body contacts in soi mosfets: Disclosed is an SOI device on a bulk silicon layer which has an FET region, a body contact region and an STI region. The FET region is made of an SOI layer and an overlying gate. The STI region includes a first STI layer separating the SOI device from an... Agent: International Business Machines Corporation

20110079854 - Semiconductor device and method for fabricating the same: A semiconductor device and a method for fabricating the same are described. A polysilicon layer is formed on a substrate. The polysilicon layer is doped with an N-type dopant. A portion of the polysilicon layer is then removed to form a plurality of dummy patterns. Each dummy pattern has a... Agent: United Microelectronics Corp.

20110079855 - Merged finfets and method of manufacturing the same: FinFETs are merged together by a metal. The method of manufacturing the FinFETs include forming a plurality of fin bodies on a substrate and merging the fin bodies with a metal. The method further includes implanting source and drain regions through the metal.... Agent: International Business Machines Corporation

20110079857 - Semiconductor devices and methods of manufacturing the same: In semiconductor devices, methods of forming the same, the semiconductor device include a first gate structure having a first gate oxide layer pattern, a first polysilicon layer pattern containing atoms larger than silicon and a first hard mask layer pattern on substrates under tensile stress. N-type impurity regions are formed... Agent: Samsun Electronics Co., Ltd.

20110079856 - Strained structure of semiconductor device: The present disclosure provides a semiconductor device that includes a semiconductor substrate, a gate structure disposed on a surface of the substrate, and strained structures disposed in the substrate at either side of the gate structure and formed of a semiconductor material different from the semiconductor substrate. Each strained structure... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110079858 - Semiconductor memory device having a sense amplifier circuit with decreased offset: A semiconductor memory device having high integration, low power consumption and high operation speed. The memory device includes a sense amplifier circuit having plural pull-down circuits and a pull-up circuit. A transistor constituting one of the plural pull-down circuits has a larger constant than that of a transistor constituting the... Agent: Elpida Memory, Inc.

20110079859 - Semiconductor devices including fin shaped semiconductor regions and stress inducing layers: A semiconductor device may include a substrate, an active semiconductor region of the substrate, and a gate electrode. The active semiconductor region may include a channel region between first and second junction regions. The channel region may include a first semiconductor material, the first and second junction regions may include... Agent:

20110079861 - Advanced transistors with threshold voltage set dopant structures: An advanced transistor with threshold voltage set dopant structure includes a gate with length Lg and a well doped to have a first concentration of a dopant. A screening region is positioned between the well and the gate and has a second concentration of dopant greater than 5×1018 dopant atoms... Agent:

20110079860 - Tunnel field effect transistor with improved subthreshold swing: The present disclosure provides a tunnel field effect transistor (TFET) device comprising at least following segments: a highly doped drain region, a lowly doped up to undoped channel region being in contact with the drain region, the channel region having a longitudinal direction, a highly doped source region in contact... Agent: Imec

20110079862 - Self-aligned insulating etchstop layer on a metal contact: A semiconductor device comprising a substrate having a transistor that includes a metal gate structure; a first oxide layer formed over the substrate; a silane layer formed on the first oxide layer; and a non-conductive metal oxide layer grown on the metal gate structure, wherein the silane layer inhibits nucleation... Agent:

20110079863 - Micromechanical structure, method for manufacturing a micromechanical structure, and use of a micromechanical structure: A micromechanical structure which includes a substrate having a main plane of extension, and a seismic mass which is movable relative to the substrate. The micromechanical structure includes a fixed electrode which is connected to the substrate, and a counterelectrode which is connected to the seismic mass. The fixed electrode... Agent:

20110079864 - Low profile human interface device: A human interface device is provided, having a substrate. A strain sensitive die is coupled to the substrate wherein the die is capable of providing an electrical signal indicative of a force applied to the strain sensitive die. A force transfer element is positioned adjacent to the strain sensitive die... Agent: Knowles Electronics, LLC

20110079865 - Radiation detection and a method of manufacturing a radiation detector: The invention relates to a radiation detector (10), comprising an array of pixels (1), wherein each pixel (1) comprises a conversion layer of a semiconductor material (4) for converting incident radiation into electrical signals and wherein each pixel (1) is surrounded by a trench (3) that is at least partly... Agent: Konnklije Philips Electronics N.v.

20110079866 - Solid-state image pickup device, method for manufacturing the same, and electronic apparatus: A method for manufacturing a solid-state image pickup device is provided. In this method, a pixel isolation member is formed in a semiconductor substrate including pixels, and the thickness of the substrate is reduced by CMP. For forming the pixel isolation member, a first pixel isolation member is formed by... Agent: Sony Corporation

20110079867 - Solid-state imaging device: A solid-state imaging device capable of making reduction in reflection at the interface between a light guide and an incident unit consistent with improvement in condensing efficiency by the light guide is provided. The solid-state imaging device includes a substrate internally including a photoelectric conversion unit, and a condensing unit... Agent: Canon Kabushiki Kaisha

20110079868 - Solid-state imaging device and manufacturing method thereof: According to one embodiment, a solid-state imaging device includes a semiconductor substrate of a first conductive type having a diffusion layer region provided on a surface thereof, a diffusion layer of the first conductive type for a pixel separation whose bottom portion is formed at the deepest position of the... Agent:

20110079869 - Multiplexed output two terminal photodiode array for imaging applications and related fabrication process: A detector array for an imaging system may exploit the different sensitivities of array pixels to an incident flux of low energy photons with a wavelength falling near the high end of the range of sensitivity of the semiconductor. The detector array may provide the de-multiplexable spatial information. The detector... Agent: Stmicroelectronics S.r.l.

20110079870 - Semiconductor device: The semiconductor device disclosed in this specification has a semiconductor element region, a peripheral termination region, a peripheral electrode, an insulating film, and an intermediate electrode. A semiconductor element is formed within the semiconductor element region. The peripheral termination region is formed around the semiconductor element region and formed of... Agent: Toyota Jidosha Kabushiki Kaisha

20110079871 - Semiconductor device and method of fabricating the same: A semiconductor device includes a semiconductor substrate having a trench defining an active region. A wall oxide is formed on side walls of the active region extending in the longitudinal direction, and an element isolation layer is formed in the trenches. A method of manufacturing a semiconductor device includes forming... Agent: Hynix Semiconductor Inc.

20110079872 - Passive device, semiconductor module, electronic circuit board, and electronic system having the passive device, and methods of fabricating and inspecting the semiconductor module: Provided are a passive device of a semiconductor module, a semiconductor module having the passive device, an electronic circuit board and electronic system having the passive device or semiconductor module, and methods of fabricating and inspecting the semiconductor module. The passive device of the semiconductor module includes a main body... Agent: Samsung Electronics Co., Ltd

20110079873 - Semiconductor device: A semiconductor device includes a base insulating film on which a silicon fuse, silicon wiring patterns, and a silicon guard ring are formed. The silicon guard ring surrounds the silicon fuse and has silicon cutout parts so as not to contact the silicon wiring patterns. A via guard ring, which... Agent: Ricoh Company, Ltd.

20110079875 - Anti-fuse and method for forming the same, unit cell of non volatile memory device with the same: There is provided an anti-fuse, including a gate dielectric layer formed over a substrate, a gate electrode, including a body portion and one or more protruding portions extending from the body portion, the body portion and the one or more protruding portions being formed to contact on the gate dielectric... Agent: Magnachip Semiconductor, Ltd.

20110079874 - Antifuse structure for in line circuit modification: An antifuse structure and methods of forming contacts within the antifuse structure. The antifuse structure includes a substrate having an overlying metal layer, a dielectric layer formed on an upper surface of the metal layer, and a contact formed of contact material within a contact via etched through the dielectric... Agent: International Business Machines Corporation

20110079876 - Method of manufacturing a semiconductor component and structure: A semiconductor component and methods for manufacturing the semiconductor component that includes a monolithically integrated passive device. In accordance with embodiments, the monolithically integrated passive device includes an inductor formed from damascene structures.... Agent:

20110079878 - Ferroelectric capacitor encapsulated with a hydrogen barrier: An integrated circuit containing a ferroelectric capacitor, an underlying hydrogen barrier, and an overlying hydrogen barrier layer. A method for forming an integrated circuit containing a ferroelectric capacitor, an underlying hydrogen barrier, and an overlying hydrogen barrier layer.... Agent: Texas Instruments Incorporated

20110079877 - Mounting circuit substrate: A semiconductor package containing a field effect transistor (FET) used in a high frequency band includes a mounting circuit substrate on which the semiconductor device is mounted. The mounting circuit substrate has a gate wiring conductor, a drain wiring conductor, and a source wiring conductor, which are connected to the... Agent: Mitsubishi Electric Corporation

20110079879 - Semiconductor devices including capacitor support pads: A semiconductor device may include a semiconductor substrate and a plurality of first capacitor electrodes arranged in a plurality of parallel lines on the semiconductor substrate with each of the first capacitor electrodes extending away from the semiconductor substrate. A plurality of capacitor support pads may be provided with each... Agent:

20110079880 - Semiconductor device: A serially-connected diode pair made of diodes having a high withstand voltage and a low on-resistance is formed based on a high withstand voltage vertical PNP bipolar transistor process technology. Two of the diode pairs are connected in parallel to form a bridge so that there is formed a high-efficiency... Agent: Sanyo Semiconductor Manufacturing Co., Ltd.

20110079881 - Integrated circuit chip protected against laser attacks: An integrated circuit chip formed inside and on top of a semiconductor substrate and including: in the upper portion of the substrate, an active portion in which components are formed; and under the active portion and at a depth ranging between 5 and 50 μm from the upper surface of... Agent: Stmicroelectronics (rousset) Sas

20110079882 - Wafer and a method for manufacturing a wafer: A wafer includes a wafer frontside and a region adjacent to the device surface, wherein the region includes vacancy-oxygen complexes and the wafer frontside includes a predetermined surface structure to form thereon a device with a desired property.... Agent:

20110079883 - Ferroelectric thin film: Provided is a ferroelectric thin film formed on a substrate and having an amount of remanent polarization increased in its entirety. The ferroelectric thin film contains a perovskite-type metal oxide formed on a substrate, the ferroelectric thin film containing a column group formed of multiple columns each formed of a... Agent: Kyoto University

20110079884 - Hydrogen passivation of integrated circuits: An integrated circuit with a passivation trapping layer. An integrated circuit with a hydrogen or deuterium releasing layer underlying a passivation trapping layer. Method for forming an integrated circuit having a hydrogen or deuterium releasing layer. Method for forming an integrated circuit having a passivation trapping layer.... Agent: Texas Instruments Incorporated

20110079886 - Integrated circuit packaging system with pad connection and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing a package paddle; forming a pad extension having a spacing to the package paddle; forming a lead adjacent the pad extension, the pad extension between the package paddle and the lead; forming a conductive layer directly on and... Agent:

20110079888 - Integrated circuit packaging system with protective coating and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: forming a lead-frame having a die attach paddle and a contact pad connected by a link; mounting an integrated circuit die over the die attach paddle; molding a package body on the lead-frame and the integrated circuit die including... Agent:

20110079885 - Integrated circuit packaging system with shaped lead and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: forming a package lead having a retention structure around a perimeter of the package lead with a first concave surface, a ridge, and a second concave surface; forming a die attach paddle adjacent the package lead and having an... Agent:

20110079887 - Lead frame and method of manufacturing the same: A lead frame having improved connectivity with a molded portion and a method of manufacturing the lead frame are provided. The lead frame includes a die pad on which a semiconductor chip is to be disposed; at least one lead portion arranged to be connected to the semiconductor chip; and... Agent: Samsung Techwin Co., Ltd.

20110079889 - Cavity structure comprising an adhesion interface composed of getter material: A structure comprising a cavity delimited by a first substrate and a second substrate attached to the first substrate by an adhesion interface, in which a first part of a first portion of a getter material forms part of the adhesion interface, and a second part of the first portion... Agent: Commiss. A L'energie Atom. Et Aux Energ. Alterna.

20110079891 - Integrated circuit package system for stackable devices and method for manufacturing thereof: A method for manufacturing an integrated circuit package system includes: forming a stack module including: providing a stack die and encapsulating the stack die with an insulating material having a protruding support and a pad connected to the stack die; mounting the stack module on a package base; connecting the... Agent:

20110079890 - Semiconductor package, semiconductor package structure including the semiconductor package, and mobile phone including the semiconductor package structure: Provided is a semiconductor package. The semiconductor package may include a first semiconductor package having first semiconductor chips sequentially stacked on a substrate. In example embodiments, the first semiconductor chips may have a cascaded arrangement in which first sides and second sides of the semiconductor chips define cascade patterns. The... Agent: Samsung Electronics Co., Ltd.

20110079892 - Chip package and fabrication method thereof: A chip package includes a substrate having a pad region, a device region, and a remained scribe region located at a periphery of the substrate; a signal and an EMI ground pads disposed on the pad region; a first and a second openings penetrating into the substrate to expose the... Agent:

20110079893 - Device package and methods for the fabrication and testing thereof: Provided are methods of forming sealed via structures. One method involves: (a) providing a semiconductor substrate having a first surface and a second surface opposite the first surface; (b) forming a layer on the first surface of the substrate; (c) etching a via hole through the substrate from the second... Agent:

20110079895 - Bump structure, chip package structure including the same and method of manufacturing the same: A bump structure includes a first substrate, a plurality of first bond pads, a plurality of dielectric bumps, a plurality of under bump metal layers, and a plurality of metal layers. The plurality of first bond pads are spaced apart on the first substrate. The plurality of dielectric bumps disposed... Agent: Industrial Technology Research Institute

20110079899 - Embedded integrated circuit package system and method of manufacture thereof: A method of manufacture of an embedded integrated circuit package system includes: forming a first conductive pattern on a first structure; connecting a first integrated circuit die, having bumps on a first active side, directly on the first conductive pattern by the bumps; forming a substrate forming encapsulation to cover... Agent:

20110079897 - Integrated circuit chip and flip chip package having the integrated circuit chip: In an integrated circuit (IC) chip and a flip chip package having the same, no wiring line is provided and the first electrode pad does not make contact with the wiring line in a pad area of the IC chip. Thus, the first bump structure makes contact with the first... Agent: Samsung Electronics Co., Ltd

20110079901 - Methods of forming back side layers for thinned wafers and related structures: A method of processing a wafer including a plurality of integrated circuit devices on a front side of the wafer, may include thinning the wafer from a back side opposite the front side. After thinning the wafer, a back side layer may be provided on the back side of the... Agent:

20110079900 - Microfeature workpieces and methods for forming interconnects in microfeature workpieces: Methods for forming interconnects in microfeature workpieces, and microfeature workpieces having such interconnects are disclosed herein. The microfeature workpieces may have a terminal and a substrate with a first side carrying the terminal and a second side opposite the first side. In one embodiment, a method includes (a) constructing an... Agent: Micron Technology, Inc.

20110079898 - Semiconductor device and method of manufacturing the same, circuit board, and electronic instrument: A substrate includes an insulating film in which a penetrating hole is formed, the penetrating hole extending between a first surface of the insulating film and a second surface of the insulating film opposite to the first surface of the insulating film. A wiring pattern is adhered to the first... Agent: Seiko Epson Corporation

20110079896 - Semiconductor device and semiconductor device fabrication method: A semiconductor device fabrication method, comprising the steps of: forming a solder portion on an electrode of a substrate on which a semiconductor chip is to be mounted; applying a resin layer onto the substrate to a thickness such that a top region of the solder portion is exposed; curing... Agent: Fujitsu Limited

20110079894 - Template process for small pitch flip-flop interconnect hybridization: A process is disclosed for high density indium bumping of microchips by using an innovative template wafer upon which the bumps are initially fabricated. Once fabricated, these bumps are transferred to the microchip, after which can be hybridized to another microchip. Such a template wafer is reusable, and thus provides... Agent: United States Of America, As Represented By The Secretary Of The Army

20110079903 - Chip package and fabrication method thereof: A chip package and a fabrication method thereof are provided. The chip package includes a semiconductor substrate containing a semiconductor component and a conductive pad thereon. A through hole penetrates the semiconductor substrate from a backside thereof to expose the conductive pad. A redistribution layer is below the backside of... Agent:

20110079905 - Die stacking system and method: Die stacking systems and methods are disclosed. In an embodiment, a semiconductor device includes a passivation surface and a conductive die receiving surface located in an opening of the passivation surface. The conductive die receiving surface has a surface area that is larger than a footprint of a second die... Agent: Qualcomm Incorporated

20110079902 - Semiconductor device: A semiconductor device has a wiring substrate provided with an external connecting terminal on a lower surface, a semiconductor chip mounted onto an upper surface of the wiring substrate, a cap-shaped heat dissipation member arranged on the upper surface of the wiring substrate so as to cover the semiconductor chip,... Agent:

20110079904 - Semiconductor device: Wire bonding method for reducing height of a wire loop in a semiconductor device, including a first bonding step of bonding an initial ball formed at a tip end of a wire onto a first bonding point using a capillary, thereby forming a pressure-bonded ball; a wire pushing step of... Agent: Kabushiki Kaisha Shinkawa

20110079906 - Pre-packaged structure: A pre-packaged structure includes a substrate with a substrate circuit, a die having a core circuit and disposed on the substrate, a passivation selectively covering the core circuit, a buffer metal layer electrically connected to the core circuit and completely covering the passivation and a copper wire bond electrically connected... Agent:

20110079907 - Semiconductor device having a copper plug: Disclosed is a semiconductor device wherein an insulation layer has a copper plug in contact with the last wiring layer of the device. There may also be a barrier layer separating the copper plug from the insulation layer. In a further embodiment, there may also be an aluminum layer between... Agent: International Business Machines Corporation

20110079908 - Stress buffer to protect device features: Disclosed is a stress buffer structure intended to be disposed adjacent a face of a semiconductor substrate. The stress buffer structure includes at least one polymer layer formed on the face of the semiconductor substrate and a plurality of metal plates disposed over the polymer layer, wherein the metal plates... Agent: Unisem Advanced Technologies Sdn. Bhd.

20110079909 - Semiconductor device and method for manufacturing semiconductor device: A generation of a void in a recessed section is inhibited. A method for manufacturing a semiconductor device includes: an operation of forming recessed sections in an insulating film, which is formed on a semiconductor substrate; an operation of forming a seed film in the recessed section; an operation of... Agent: Renesas Electronics Corporation

20110079910 - Dual metal interconnects for improved gap-fill, reliability, and reduced capacitance: Embodiments of apparatus and methods for forming dual metal interconnects are described herein. Other embodiments may be described and claimed.... Agent:

20110079911 - Method for the connection of two wafers, and a wafer arrangement: A method for the connection of two wafers in which a contact area is formed between the two wafers by placing the two wafers one on top of the other. The contact area is heated locally and for a limited time. A wafer arrangement comprises two wafers which have been... Agent: Osram Opto Semiconductors Gmbh

20110079912 - Connection for off-chip electrostatic discharge protection: A method and apparatus for off-chip ESD protection, the apparatus includes an unprotected IC 22 stacked on an ESD protection chip 24 and employing combinations of edge wrap 32 and through-silicon via connectors 44 for electrical connection from an external connection lead 34 on a chip carrier 84 or system... Agent: Interconnect Portfolio LLC

20110079915 - Semiconductor chip and semiconductor device, and method for manufacturing semiconductor device: A semiconductor chip is provided comprising a semiconductor substrate on which an integrated circuit is formed. The semiconductor chip, which is provided on the semiconductor substrate in an area array, further comprises a plurality of electrodes electrically coupled with the inside of the semiconductor substrate, wherein the electrodes are arranged... Agent: Seiko Epson Corporation

20110079913 - Semiconductor device and method of manufacturing the same: A method of manufacturing a semiconductor device, includes temporarily fixing a semiconductor chip to a supporting member to direct a connection electrode toward the supporting member side, forming an insulating layer for preventing resin-permeation covering the semiconductor chip, on the supporting member and the semiconductor chip, forming a resin substrate... Agent: Shinko Electric Industries Co., Ltd.

20110079914 - Standard cell and semiconductor device including the same: This invention prevents a break in a signal wire disposed between wire ends due to attenuation and improves production yields of devices. In a standard cell, a first signal wire extends in a first direction. Second and third signal wires extend in a second direction substantially perpendicular to the first... Agent: Panasonic Corporation

20110079919 - Electrical connection via for the substrate of a semiconductor device: An electrical connection via passing through a substrate for a semiconductor device is made of at least one conducting ring formed in an annular hole passing through the substrate.... Agent: Stmicroelectronics (crolles 2) Sas

20110079920 - Electrical connection via for the substrate of a semiconductor device: An electrical connection via is formed through a substrate to make an electrical connection from one face of the substrate to the other. The via includes a ring made of an electrically conductive material. The ring is formed in a hole in the substrate so as to at least partly... Agent: Stmicroelectronics (crolles 2) Sas

20110079916 - Electronic assemblies including mechanically secured protruding bonding conductor joints: An electronic assembly includes an IC die including a semiconductor top surface having active circuitry thereon and a bottom surface, and at least one protruding bonding feature having sidewall surfaces and a leading edge surface extending outward from the IC die. A workpiece has a workpiece surface including at least... Agent: Texas Instruments Incorporated

20110079921 - Generation of metal holes by via mutation: A semiconductor interconnect architecture provides a reduction in the intersection of vias on the last layer (“VL”) and holes in the last thin metal layer (“MLHOLE”) without degradation of the product yield or robustness, or increases copper dishing. The mutation of some dense redundant VLs to MLHOLEs decreases the number... Agent:

20110079917 - Interposer structure with passive component and method for fabricating same: According to an exemplary embodiment, an interposer structure for electrically coupling a semiconductor die to a support substrate in a semiconductor package includes at least one through-wafer via extending through a semiconductor substrate, where the at least one through-wafer via provides an electrical connection between the semiconductor die and the... Agent: Broadcom Corporation

20110079918 - Plasma-based organic mask removal with silicon fluoride: Removal of organic mask material from an etched dielectric film with an etchant gas mixture including silicon fluoride (SiF4). In certain embodiments, SiF4 is combined in an etchant gas mixture of molecular nitrogen (N2), carbon dioxide (CO2) to in-situ strip an organic mask material from a porous low-k dielectric film... Agent: Applied Materials, Inc.

20110079922 - Integrated circuit with protective structure, and method of fabricating the integrated circuit: A structure includes a semiconductor substrate having semiconductor devices formed on or in the substrate. An interconnecting metallization structure is formed over and connected to the devices. The interconnecting metallization structure including at least one dielectric layer. A passivation layer is deposited over the interconnecting metallization structure and the dielectric... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20110079923 - Vertically stackable dies having chip identifier structures: A vertically stackable die having a chip identifier structure is disclosed. In a particular embodiment, a semiconductor device is disclosed that includes a die comprising a first through silicon via to communicate a chip identifier and other data. The semiconductor device also includes a chip identifier structure that comprises at... Agent: Qualcomm Incorporated

20110079924 - Vertically stackable dies having chip identifier structures: A vertically stackable die having a chip identifier structure is disclosed. In a particular embodiment, a semiconductor device is disclosed that includes a die comprising a first through via to communicate a chip identifier and other data. The semiconductor device also includes a chip identifier structure that comprises at least... Agent: Qualcomm Incorporated

20110079925 - Flip chip interconnect method and design for gaas mmic applications: A monolithic microwave integrated circuit (MMIC) flip chip interconnect is formed by coating an active side of the chip with a dielectric coating, such as benzocyclobutene (BCB), that inhibits deposition of metal plating materials. A portion of the dielectric coating is removed to expose bond pads on the active side... Agent: Northrop Grumman Systems Corporation

20110079926 - Method of manufacturing substrate for flip chip and substrate for flip chip manufactured using the same: There is provided a method of manufacturing a substrate for flip chip, and a substrate for flip chip manufactured using the same. The method includes providing a base substrate including at least one conductive pad, forming a solder resist layer on the base substrate, the solder resist layer including a... Agent: Samsung Electro-mechanics Co., Ltd.

20110079927 - Photosensitive adhesive composition, and obtained using the same, adhesive film, adhesive sheet, semiconductor wafer with adhesive layer, semiconductor device and electronic part: A photosensitive adhesive composition comprising: (A) a polyimide having a carboxyl group as a side chain, whereof the acid value is 80 to 180 mg/KOH; (B) a photo-polymerizable compound; and (C) a photopolymerization initiator.... Agent:

20110079928 - Semiconductor integrated circuit and multi-chip module: In a semiconductor integrated circuit requiring a large number of pads, an internal circuit is arranged in the center portion, and a plurality of two kinds of I/O circuits for inputting and outputting signals from and to the outside and many pads are arranged along four sides of the semiconductor... Agent: Panasonic Corporation

20110079929 - Kit for optical semiconductor encapsulation: The present invention relates to a kit for optical semiconductor encapsulation including a liquid first encapsulating material containing inorganic particles and a liquid second encapsulating material containing a phosphor; a kit for optical semiconductor encapsulation including a sheet-shaped first encapsulating material containing inorganic particles and a liquid second encapsulating material... Agent: Nitto Denko Corporation