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Active solid-state devices (e.g., transistors, solid-state diodes) March listing by industry category 03/11

20110073825 - Memory device and storage apparatus: A memory device 10 having an arrangement in which a memory thin film is sandwiched between first and second electrodes, the memory thin film contains at least rare earth elements, the memory thin film 4 or a layer in contact with the memory thin film contains any one of elements... Agent: Sony Corporation

20110073827 - Nanodevice arrays for electrical energy storage, capture and management and method for their formation: An apparatus, system, and method are provided for a vertical two-terminal nanotube device configured to capture and generate energy, to store electrical energy, and to integrate these functions with power management circuitry. The vertical nanotube device can include a column disposed in an anodic oxide material extending from a first... Agent: University Of Maryland

20110073826 - Phase change memory device and fabrication method thereof: A phase change memory device is provided that includes a switching device, a bottom electrode contact in contact with the switching device and a porous spacer formed on the bottom electrode contact.... Agent: Hynix Semiconductor Inc.

20110073831 - Ferroelectric polymer memory device including polymer electrodes and method of fabricating same: A method of fabricating a ferroelectric memory module with conducting polymer electrodes, and a ferroelectric memory module fabricated according to the method. The ferroelectric polymer memory module includes a first set of layers including: an ILD layer defining trenches therein; a first electrode layer disposed in the trenches; a first... Agent:

20110073828 - Memristor amorphous metal alloy electrodes: A nanoscale switching device comprises at least two electrodes, each of a nanoscale width; and an active region disposed between and in electrical contact with the electrodes, the active region containing a switching material capable of carrying a species of dopants and transporting the dopants under an electrical field, wherein... Agent:

20110073829 - Phase change memory device having a heater with a temperature dependent resistivity, method of manufacturing the same, and circuit of the same: A phase change memory device having a heater that exhibits a temperature dependent resistivity which provides a way of reducing a reset current is presented. The phase change memory device includes a phase change pattern and a heating electrode contacted with the phase change pattern. The heating electrode includes a... Agent: Hynix Semiconductor Inc.

20110073830 - Phase change random access memory device and method of manufacturing the same: A phase change random access memory includes a semiconductor substrate, a switching device pattern formed on the semiconductor substrate, a bottom electrode contact pattern formed on the switching device pattern, a phase change layer pattern formed on the bottom electrode contact pattern, and an insulating layer disposed at a portion... Agent: Hynix Semiconductor Inc.

20110073832 - Phase-change memory device: A phase-change memory device, including a lower electrode, a phase-change material pattern electrically connected to the lower electrode, and an upper electrode electrically connected to the phase-change material pattern. The lower electrode may include a first structure including a metal semiconductor compound, a second structure on the first structure, the... Agent:

20110073833 - Resistance memory element and method of manufacturing the same: A resistance memory element having a pair of electrodes and an insulating film sandwiched between a pair of electrodes includes a plurality of cylindrical electrodes of a cylindrical structure of carbon formed in a region of at least one of the pair of electrodes, which is in contact with the... Agent: Fujitsu Limited

20110073834 - Activation of graphene buffer layers on silicon carbide by ultra low temperature oxidation: A method of electrically activating a structure having one or more graphene layers formed on a silicon carbide layer includes subjecting the structure to an oxidation process so as to form a silicon oxide layer disposed between the silicon carbide layer and a bottommost of the one or more graphene... Agent: International Business Machines Corporation

20110073836 - High power density photo-electronic and photo-voltaic materials and methods of making: A high power density photo-electronic and photo-voltaic material comprising a bio-inorganic nanophotoelectronic material with a photosynthetic reaction center protein encapsulated inside a multi-wall carbon nanotube or nanotube array. The array can be on an electrode. The photosynthetic reaction center protein can be immobilized on the electrode surface and the protein... Agent: The Government Of The United States Of America As Represented By The Secretary Of The Navy

20110073835 - Semiconductor nanocrystal film: A film comprised of semiconductor nanocrystals having an aspect ratio less than 3:1 and a diameter greater than 10 nanometers, wherein the film has less than 5% by volume of organic material.... Agent:

20110073837 - High-performance single-crystalline n-type dopant-doped metal oxide nanowires for transparent thin film transistors and active matrix organic light-emitting diode displays: Methods, materials, apparatus and systems are described for implementing high-performance arsenic (As)-doped indium oxide (In2O3) nanowires for transparent electronics, including their implementation in transparent thin-film transistors (TTFTs) and transparent active-matrix organic light-emitting diodes (AMOLED) displays. In one implementation, a method of fabricating n-type dopant-doped metal oxide nanowires includes dispersing nanoparticle... Agent: University Of Southern California

20110073838 - Ultraviolet light emitting diode with ac voltage operation: Ultraviolet light emitting illuminator, and method for fabricating same, comprises an array of ultraviolet light emitting diodes and a first and a second terminal. When an alternating current is applied across the first and second terminals and thus to each of the diodes, the illuminator emits ultraviolet light at a... Agent:

20110073839 - Ii-vi semiconductor nanowires: A high quality II-VI semiconductor nanowire is disclosed. A plurality of II-VI semiconductor nanowires is provided, with each being fixed to a support. Each nanowire terminates in a free end and a metal alloy nanoparticle is fixed to each nanowire at its free end.... Agent:

20110073841 - Nano line structures in microelectronic devices: A method of forming a microelectronic device includes forming a groove structure having opposing sidewalls and a surface therebetween on a substrate to define a nano line arrangement region. The nano line arrangement region has a predetermined width and a predetermined length greater than the width. At least one nano... Agent: Samsung Electronics Co., Ltd.

20110073842 - Nano-wire field effect transistor, method for manufacturing the transistor, and integrated circuit including the transistor: Provided is a method for fabricating a nano-wire field effect transistor including steps of: preparing an SOI substrate having a (100) surface orientation, and nano-wire field effect transistor where two triangular columnar members configuring the nano-wires and being made of a silicon crystal layer are arranged one above the other... Agent: National Institue Of Advanced Industrial Science And Technology

20110073840 - Radial contact for nanowires: Another embodiment is a method and apparatus of a semiconductor device having radial contact using nanowires of short lengths. Source and drain electrodes are fabricated having a contact structure with a rotationally invariant geometry. The contact structure has inner and outer contacts corresponding to the source and drain electrodes, respectively.... Agent: Palo Alto Research Center Incorporated

20110073847 - Laminate, preparatory support, method for producing laminate, and method for producing device: There are provided a laminate, a preparatory support, a laminate production method and a device production method which make it possible to successfully produce a thin device on a flexible substrate which is likely to bend or break. A laminate 1A includes: a support 2A; a photothermal conversion layer 3A;... Agent: Dai Nippon Printing Co., Ltd.

20110073849 - Metal complexes of cyclometallated imidazo[1,2-f ]phenanthridine and diimidazo[1,2-a:1',2'-c ]quniazoline ligands and isoelectronic and benzannulated analogs thereof: Compounds comprising phosphorescent metal complexes comprising cyclometallated imidazo[1,2-f]phenanthridine and diimidazo[1,2-a:1′,2′-c]quinazoline ligands, or isoelectronic or benzannulated analogs thereof, are described. Organic light emitting diode devices comprising these compounds are also described.... Agent:

20110073845 - Organic electroluminescence device: wherein X1 to X16 each independently represents a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms, a linear, branched or cyclic alkoxy group having 1 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted... Agent: Ritdisplay Corporation

20110073848 - Organic electroluminescence device: e

20110073852 - Organic electroluminescent device: A problem of the invention is to provide an organic EL device having a high efficiency, a low driving voltage and a long life, by combining various materials for organic EL device, which are excellent in an injection or transportation performance of holes or electrons, and in stability and durability... Agent: Hodogaya Chemical Co., Ltd.

20110073850 - Organic electroluminescent element, illuminator and display: p

20110073851 - Organic electroluminescent element, illuminator and display:

20110073846 - Organic electroluminescent element, method for manufacturing the organic electroluminescent element, and light emitting display device: Disclosed is an organic electroluminescent element having an element structure that can reduce damage to an organic layer during electrode formation and can facilitate the injection of charges from the electrode into the organic layer. The organic electroluminescent element includes an anode, a cathode, and an organic layer held between... Agent: Dai Nippon Printing Co., Ltd.

20110073843 - Organic light emitting display and process for its manufacturing: An organic electro-luminescent display is provided, including a thin layer (16) of an electron-donor metal between cathodes (17) and an organic electron transport layer (15), and a partial doping of the latter layer with the same metal.... Agent: Saes Getters S.p.a.

20110073853 - Organic light-emitting diode luminaires: There is provided n organic light-emitting diode luminaire. The luminaire includes a first electrode, a second electrode, and a light-emitting layer therebetween. The light-emitting layer includes a small molecule host material having dispersed therein a first dopant having a first emitted color and a second dopant having a second emitted... Agent: E.i. Du Pont De Nemours And Company

20110073854 - Polymer compound and organic transistor using the same: [wherein X1 represents an oxygen atom, a sulfur atom or N(RN)—, R1 to R4 and RN represent a hydrogen atom, a halogen atom, an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group, an alkylthio group, an aryl group, an aryloxy group, an arylthio group, an arylalkyl group,... Agent: Sumation Co., Ltd.

20110073844 - White organic light emitting device: A white organic light emitting device having a stack structure of blue fluorescence and red/green phosphorescence is disclosed, in which efficiency of the blue fluorescence is improved to increase lifespan of the white organic light emitting device, color quality is improved, and power consumption is reduced.... Agent:

20110073855 - Liquid crystal display panel and fabrication method thereof: A method for manufacturing a LCD panel includes providing a substrate defining a TFT region and a pixel region; forming a transparent conductive layer and a first metal layer on the substrate in that order; forming a gate line in the TFT region, and a pixel electrode within the pixel... Agent: Chimei Innolux Corporation

20110073857 - Semiconductor device, its manufacture method and template substrate: A semiconductor device includes a ZnO-containing substrate containing Li, a zinc silicate layer formed above the ZnO-containing substrate, and a semiconductor layer epitaxially grown relative to the ZnO-containing substrate via the zinc silicate layer.... Agent: Stanley Electric Co., Ltd.

20110073856 - Thin film transistor: To achieve, in an oxide semiconductor thin layer transistor, both the stability of threshold voltage against electric stress and suppression of variation in the threshold voltage in a transfer characteristic. A thin film transistor includes an oxide semiconductor layer and a gate insulating layer disposed so as to be in... Agent: Canon Kabushiki Kaisha

20110073858 - Test structure for determination of tsv depth: A test structure for a through-silicon-via (TSV) in a semiconductor chip includes a first contact, the first contact being electrically connected to a first TSV; and a second contact, wherein the first contact, second contact, and the first TSV form a first channel, and a depth of the first TSV... Agent: International Business Machines Corporation

20110073859 - Reduced stiction mems device with exposed silicon carbide: A MEMS device has a first member that is movable relative to a second member. At least one of the first member and the second member has exposed silicon carbide with a water contact angle of greater than about 70 degrees.... Agent: Analog Devices, Inc.

20110073861 - Integrated circuit device and method for manufacturing integrated circuit device: An object of the present invention is to provide a structure of a thin film circuit portion and a method for manufacturing a thin film circuit portion by which an electrode for connecting to an external portion can be easily formed under a thin film circuit. A stacked body including... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110073860 - Semiconductor device and display device: A thin film transistor comprising an insulating film, a gate electrode embedded in a superficial portion of the insulating film, a gate insulating film on the gate electrode and the insulating film, a semiconductor film on the gate insulating film, a channel protection film on a portion of the semiconductor... Agent: Sony Corporation

20110073862 - Array structure and fabricating method thereof: An array structure, which includes a TFT, a passivation layer, a pixel electrode, a first connecting layer and a first spacer is provided. The TFT includes a gate, a source and a drain. The passivation layer overlays the TFT. The pixel electrode is located on the passivation layer. The first... Agent: Au Optronics Corporation

20110073864 - Array substrate and manufacturing method: A method of manufacturing an array substrate comprising: forming a data line and a gate line which are crossed with each other and a gate electrode on a base substrate, and the data line is discontinuously disposed so as to be separated from the gate line or the gate line... Agent: Beijing Boe Optoelectronics Technology Co., Ltd.

20110073865 - Display device and manufacturing method thereof: Conventionally, photolithography and anisotropic etching are performed to form a plug between an electrode and a wiring, etc., thereby increasing the number of steps, getting the throughput worse, and producing unnecessary materials. To solve the problems, the present invention provides a method for manufacturing a display device, including the formation... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110073863 - Organic light emitting diode display: An organic light emitting diode display includes a thin film transistor on a substrate (1). The thin film transistor includes a gate electrode (2), a gate insulating film (3) that covers the gate electrode (2), a first semiconductor film (4) provided on the gate insulating film (3), a second semiconductor... Agent: Ips Alpha Technology, Ltd.

20110073866 - Vertical-type semiconductor device: In a vertical-type non-volatile memory device, an insulation layer pattern is provided on a substrate, the insulation layer pattern having a linear shape. Single-crystalline semiconductor patterns are provided on the substrate to make contact with both sidewalls of the insulation layer pattern, the single-crystalline semiconductor patterns having a pillar shape... Agent: Samsung Electronics Co., Ltd.

20110073867 - Array substrate and manufacturing method thereof: An array substrate comprises a substrate provided with a circuit pattern and covering layers that cover the upper surfaces and side surfaces of respective portions of the circuit pattern.... Agent: Beijing Boe Optoelectronics Technology Co., Ltd.

20110073868 - Electro-optical device and electronic apparatus: An electro-optical device comprises: a first data line extending in a first direction; a second data line extending in the first direction and arranged so as to be at least partially overlapped with the first data line; a first scanning line and a second scanning line extending in a second... Agent: Seiko Epson Corporation

20110073869 - Method to reduce dislocation density in silicon using stress: A crystalline material structure with reduced dislocation density and method of producing same is provided. The crystalline material structure is annealed at temperatures above the brittle-to-ductile transition temperature of the crystalline material structure. One or more stress elements are formed on the crystalline material structure so as to annihilate dislocations... Agent: Massachusetts Institute Of Technology

20110073871 - Gallium nitride substrate: A gallium nitride substrate comprising a primary surface, the primary surface being tilted at an angle in a range of 20 to 160 degrees with respect to a C-plane of the substrate, and the substrate having a fracture toughness of more than or equal to 1.36 MN/m3/2.... Agent: Sumitomo Electric Industries, Ltd.

20110073870 - Iii-nitride semiconductor light emitting device: The present III-nitride semiconductor light-emitting device comprises: a first III-nitride semiconductor layer having a first conductivity type; a second III-nitride semiconductor layer having a second conductivity type different from the first conductivity type; an active layer disposed between the first III-nitride semiconductor layer and the second III-nitride semiconductor layer and... Agent: Semicon Light Co., Ltd

20110073873 - Compound semiconductor device using sic substrate and its manufacture: A compound semiconductor device includes: a conductive SiC substrate; an AlN buffer layer formed on said conductive SiC substrate and containing Cl; a compound semiconductor buffer layer formed on said AlN layer which contains Cl, said compound semiconductor buffer layer not containing Cl; and a device constituent layer or layers... Agent: Fujitsu Limited

20110073872 - High brightness light emitting diode and manufacturing method thereof: A high brightness light emitting diode includes a carrier substrate and an epitaxial multi-layer formed thereon. The carrier substrate includes a metal material and a medium, and a coefficient of thermal expansion (CTE) of the medium is less than a CTE of the metal material.... Agent: Advanced Optoelectronic Technology, Inc.

20110073874 - Method of reducing memory effects in semiconductor epitaxy: A method of reducing memory effects during an epitaxial growth process is provided in which a gas mixture comprising hydrogen gas and a halogen-containing gas is used to flush the CVD reaction chamber between growth steps.... Agent: Dow Corning Corporation

20110073875 - Optical signal transfer in a semiconductor device by using monolithic opto-electronic components: In a semiconductor device, optical signal transfer capabilities are implemented on the basis of silicon-based monolithic opto-electronic components in combination with an appropriate waveguide. Thus, in complex circuitries, such as microprocessors and the like, superior performance may be obtained in terms of signal propagation delay, while at the same time... Agent:

20110073880 - Glass plate with glass frit structure: A light emitting device includes: a first substrate; a second substrate; a light emitting unit interposed between the first substrate and the second substrate; and a sealing material bonding the first substrate to the second substrate and sealing the light emitting unit. The sealing material comprises V+4. In addition, a... Agent: Samsung Mobile Display Co., Ltd.

20110073877 - High-current/low cost read-in integrated circuit: A Read-In Integrated Circuit scene generator incorporates an array of unit cells, with each cell having a switching control circuit. An array of emitting elements is associated with the unit cells and each element is connected with a lead to the switching control circuit of the associated cell. A first... Agent: Nova Research, Inc.

20110073878 - Led array package covered with a highly thermal conductive plate: A light source includes a substrate, a light emitting diode on the substrate, and a phosphor layer over the light emitting diode. A plate is on the phosphor layer. An attachment member is coupled to the plate and is configured to conduct heat away from the plate.... Agent:

20110073883 - Led lamp: An LED lamp A1 is elongated in an axial direction x and includes a plurality of LED modules 30. Respective main light irradiation directions of the LED modules 30 are directed outward in radial directions that are perpendicular to the axial direction x, and the main light irradiation directions of... Agent: Rohm Co., Ltd.

20110073881 - Leds using single crystallline phosphor and methods of fabricating same: Methods for fabricating LED chips from a wafer and devices fabricated using the methods with one method comprising depositing LED epitaxial layers on an LED growth wafer to form a plurality of LEDs on the growth wafer. A single crystalline phosphor is bonded over at least some the plurality of... Agent: Cree, Inc

20110073876 - Light-emitting device and display: A light-emitting device allowed to obtain polarized light without increasing the number of components or the thickness thereof, and a display including the light-emitting device are provided. The light-emitting device includes: a light-emitting element including, on a substrate, a first electrode, a light-emitting layer and a second electrode in order... Agent: Sony Corporation

20110073879 - Light-emitting device having light-emitting elements: A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge... Agent: Seoul Semiconductor Co., Ltd.

20110073882 - System for wafer-level phosphor deposition: System for wafer-level phosphor deposition. In an aspect, a semiconductor wafer is provided that includes a plurality of LED dies wherein at least one die includes an electrical contact, a photo-resist post covering the electrical contact, and a phosphor deposition layer covering the semiconductor wafer and surrounding the photo-resist post.... Agent: Bridgelux, Inc.

20110073885 - Organic electroluminescent device: An electroluminescent device includes: first to third pixel regions; a first electrode in each of the first to third pixel regions, wherein the first electrode of the third pixel region has a first thickness, the first electrode of the first pixel region has a second thickness less than the first... Agent:

20110073884 - Organic light emitting diode display: An organic light emitting diode display is disclosed. The organic light emitting diode display includes a plurality of subpixels that emit light of at least three colors, the plurality of subpixels each including a first electrode, an organic light emitting layer, and a second electrode. Each of the organic light... Agent:

20110073886 - Led multi-side light source bracket: The present invention relates to a LED multi-side light source bracket, in particular to the bracket design that extends in the rectangular shape directly above the conducting pin for distribution and fixing of a plurality of chips before, after and above the rectangular block, wherein the chips are bridged to... Agent:

20110073888 - Group iii nitride semiconductor optical device, epitaxial substrate, and method of making group iii nitride semiconductor light-emitting device: A group III nitride semiconductor optical device includes: a substrate comprising a group III nitride semiconductor; a first group-III nitride semiconductor region on a primary surface of the substrate; a second group-III nitride semiconductor region on the primary surface of the substrate; and an active layer between the first group-III... Agent: Sumitomo Electric Industries, Ltd.

20110073887 - Optoelectronic devices having a direct-band-gap base and an indirect-band-gap emitter: Optoelectronic devices, junctions and methods of fabricating a device or junction where the emitter layer is of an indirect-band-gap material and the base layer is of a direct-band-gap material. The device or junction may have, among other structures and layers, a base layer of a first semiconductor material having a... Agent: Alliance For Sustainable Energy, LLC

20110073891 - Ac driven light emitting diode light apparatus, and its ac driven light emitting diode package element therein: An AC driven light emitting diode light apparatus, and its AC driven light emitting diode package element therein are provided. The AC driven light emitting diode package element includes a heat sinking substrate, a chip set, a pair of electrodes, and a package body. The heat sinking substrate has a... Agent: Star-reach Corp.

20110073898 - Led module: The present invention relates to a LED module which converts pump light from a LED chip (120) to light at another wavelength, which is emitted from the module. The conversion takes place in a portion of a luminescent material (124). The color purity of the LED module is enhanced by... Agent: Koninklijke Philips Electronics N.v.

20110073893 - Led structure to increase brightness: A light emitting semiconductor device comprising an LED having an emission aperture located on a surface of the LED and the emission aperture has a size that is smaller than a surface area of the LED where the emission aperture is formed. The device further includes a reflector surrounding both... Agent:

20110073892 - Light emitting device: A light emitting device having a relatively simple configuration is provided that emits stable light having a plurality of wavelengths. The light emitting device 1 comprises, in sequence, a composite substrate 3 and a gallium nitride-based semiconductor layer 5 including a light emitting layer 9. The composite substrate 3 includes... Agent: Sumitomo Electric Industries, Ltd.

20110073894 - Light-emitting diode and method for manufacturing the same: In one aspect of the invention, an LED includes a substrate, an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer and a transparent conductive layer sequentially stacked on the substrate, and p-type and n-type electrodes. The p-type semiconductor layer has a rough surface region and at least... Agent: Chi Mei Lighting Technology Corporation

20110073890 - Method for manufacturing semiconductor light-emitting device and semiconductor light emitting device: A method for manufacturing a semiconductor light-emitting device of the invention includes: forming a semiconductor layer including a light-emitting layer and a first interconnect layer on a major surface of a temporary substrate; dividing the semiconductor layer and the first interconnect layer into a plurality of chips by a trench;... Agent: Kabushiki Kaisha Toshiba

20110073897 - Organic led and manufacturing method thereof: The present invention provides an organic light emitting diode comprising a substrate, a first electrode provided on the substrate, one or more organic material layers provided on the first electrode, a second electrode provided on the organic material layer, and a light extraction layer provided on the top portion of... Agent:

20110073895 - Semiconductor light emitting device: A semiconductor light emitting device includes a semiconductor light emitting element, a lead electrically connected to the semiconductor light emitting element, and a resin package covering the semiconductor light emitting element and part of the lead. The resin package includes a lens facing the semiconductor light emitting element. The lead... Agent: Rohm Co., Ltd.

20110073889 - Semiconductor light-emitting device and method for manufacturing same: A semiconductor light-emitting device of the invention includes: a semiconductor layer including a light-emitting layer and having a first major surface and a second major surface opposite to the first major surface; a phosphor layer facing to the first major surface; an interconnect layer provided on the second major surface... Agent: Kabushiki Kaisha Toshiba

20110073896 - System for wafer-level phosphor deposition: System for wafer-level phosphor deposition. A method for phosphor deposition on a semiconductor wafer that has a plurality of LED dies includes the operations of covering the semiconductor wafer with a selected thickness of photo resist material, removing portions of the photo resist material to expose portions of the semiconductor... Agent: Bridgelux, Inc.

20110073899 - White light source, backlight, liquid crystal display apparatus, and illuminating apparatus: s

20110073900 - Semiconductor device and method for manufacturing same: A semiconductor device includes: a semiconductor structure unit; an interconnect layer provided on the major surface side of the semiconductor structure unit; an electrode pad provided on a surface of the interconnect layer on a side opposite to a surface on which the semiconductor structure unit is provided, and the... Agent: Kabushiki Kaisha Toshiba

20110073901 - Adhesive encapsulating composition and electronic devices made therewith: Adhesive encapsulating compositions for use in electronic devices such as organic electroluminescent devices, touch screens, photovoltaic devices, and thin film transistors are disclosed herein. The adhesive encapsulating compositions include pressure sensitive adhesives comprising one or more cyclic olefin copolymers, in combination with multifunctional (meth)acrylate monomers and tackifiers.... Agent:

20110073902 - Semiconductor body and method of producing a semiconductor body: A semiconductor body includes an n-conductive semiconductor layer and a p-conductive semiconductor layer. The p-conductive semiconductor layer contains a p-dopant and the n-conductive semiconductor layer an n-dopant and a further dopant.... Agent:

20110073903 - Semiconductor device: A reverse blocking IGBT according to the invention can include a reverse breakdown withstanding region, p-type outer field limiting rings formed in a reverse breakdown withstanding region and an outer field plate connected to the outer field limiting rings, the outer field plate including a first outer field plate in... Agent: Fuji Electric Holdings Co., Ltd.

20110073904 - Semiconductor device having soi substrate and method for manufacturing the same: A semiconductor device includes: a SOI substrate; a semiconductor element having first and second impurity layers disposed in an active layer of the SOI substrate, the second impurity layer surrounding the first impurity layer; and multiple first and second conductive type regions disposed in a part of the active layer... Agent: Denso Corporation

20110073905 - Semiconductor device and power converter using it: A semiconductor device and a power converter using it wherein a switching power device and a flywheel diode are connected in series, the flywheel diode includes a region having a Schottky junction to operate as a Schottky diode and a region having a pn junction to operate as a pn... Agent:

20110073906 - High voltage mosfet diode reverse recovery by minimizing p-body charges: This invention discloses a method for manufacturing a semiconductor power device in a semiconductor substrate comprises an active cell area and a termination area. The method comprises the steps of a) growing and patterning a field oxide layer in the termination area and also in the active cell area on... Agent: Alpha & Omega Semiconductor, Ltd.

20110073908 - Iii-v semiconductor device structures: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110073907 - Integrated circuit structures containing a strain-compensated compound semiconductor layer and methods and systems related thereto: A method for pseudomorphic growth and integration of an in-situ doped, strain-compensated metastable compound base into an electronic device, such as, for example, a SiGe NPN HBT, by substitutional placement of strain-compensating atomic species. The invention also applies to strained layers in other electronic devices such as strained SiGe, Si... Agent: Atmel Corporation

20110073910 - Nitride semiconductor material, semiconductor element, and manufacturing method thereof: The nitride semiconductor material according to the present invention includes a group III nitride semiconductor and a group IV nitride formed on the group III nitride semiconductor, where an interface between the group III nitride semiconductor and the group IV nitride has a regular atomic arrangement. Moreover, an arrangement of... Agent: Panasonic Corporation

20110073909 - Replacement spacer for tunnel fets: A semiconductor fabrication method includes depositing a dummy gate layer onto a substrate, patterning the dummy gate layer, depositing a hardmask layer over the dummy gate layer, patterning the hardmask layer, etching a recess into the substrate, adjacent the dummy gate layer, depositing a semiconductor material into the recess, removing... Agent: International Business Machines Corporation

20110073912 - Algan/gan hemt with normally-off threshold minimized and method of manufacturing the same: In a method of forming a gate recess, on a surface of an epitaxial wafer including an epitaxial substrate, having a semiconductor layer having the band gap energy varying therein in the depth-wise direction, and a SiN surface protective layer, having a sidewall forming a gate opening and coating the... Agent: Oki Electric Industry Co., Ltd.

20110073911 - Semiconductor device: A semiconductor device including: a substrate, which has a composition represented by the formula: Ala′Ga1-a′N, wherein a′ satisfies 0<a′≦1; an active layer, which is formed on the substrate, and which has a composition represented by the formula: Alm′Ga1-m′N, wherein m′ satisfies 0≦m′<1; a buffer layer disposed between the active layer... Agent: Sanken Electric Co., Ltd.

20110073913 - Method of fabricating semiconductor devices on a group iv substrate with controlled interface properties and diffusion tails: Electronic and opto-electronic devices having epitaxially-deposited III/V compounds on vicinal group IV substrates and method for making same. The devices include an AlAs nucleating layer on a Ge substrate. The group IV substrate contains a p-n junction whose change of characteristics during epitaxial growth of As-containing layers is minimized by... Agent: Cyrium Technologies Incorporated

20110073915 - Semiconductor integrated circuit: A semiconductor integrated circuit according to the present invention includes an I/O cell, a first PAD connected to the I/O cell, first and second PADs, a package wire which is connected to the first PAD and allows connection between the first PAD and an outside of the semiconductor integrated circuit,... Agent: Panasonic Corporation

20110073914 - Semiconductor integrated circuit device: To provide a semiconductor integrated circuit device advantageous against EM and ESD. A plurality of I/O cells; a power wire formed of a plurality of interconnect layers over the above-described I/O cells; a bonding pad formed in an upper layer of the power wire and in a position corresponding to... Agent: Renesas Electronics Corporation

20110073916 - Gate array: A gate array of a semiconductor substrate on which plural unit cells are arranged in parallel, the unit cells having the same pattern that includes a source potential region VDD, a PMOS, an NMOS and a ground potential region GND. Metal wiring lines being formed, with an insulating layer between,... Agent: Oki Semiconductor Co., Ltd.

20110073917 - Method of high density memory fabrication: The structure and method of formation of an integrated CMOS level and active device level that can be a memory device level. The integration includes the formation of a “super-flat” interface between the two levels formed by the patterning of a full complement of active and dummy interconnecting vias using... Agent: Magic Technologies, Inc.

20110073918 - Semiconductor device and manufacturing method thereof: A semiconductor device includes a thin-film transistor 126 and a thin-film diode 127. The respective semiconductor layers 109t and 109d of the thin-film transistor 126 and the thin-film diode 127 are portions of a single crystalline semiconductor layer obtained by crystallizing the same amorphous semiconductor film. The semiconductor layer 109t... Agent:

20110073922 - Contact forming method, semiconductor device manufacturing method, and semiconductor device: A semiconductor device manufacturing method includes the steps of ion-implanting a p-type or an n-type impurity into a Si layer portion to become a p-type or an n-type contact region of a semiconductor device, forming a metal film for a contact on a surface of the contact region without performing... Agent:

20110073919 - Method of fabricating finfet device: The present disclosure provides a FinFET device and method of fabricating a FinFET device. The method includes providing a substrate, forming a fin structure on the substrate, forming a gate structure including a gate dielectric and gate electrode, the gate structure overlying a portion of the fin structure, forming a... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110073921 - Semiconductor device and manufacturing method of the same: The bonding time of a metallic ribbon is shortened in the semiconductor device which connects a lead frame with the bonding pad of a semiconductor chip with a metallic ribbon. The bottom of the wedge tool is divided into two by the V-groove at the first branch and the second... Agent: Renesas Electronics Corporation

20110073920 - Superior fill conditions in a replacement gate approach by corner rounding based on a sacrificial fill material: In a replacement gate approach, a top area of a gate opening may receive a superior cross-sectional shape on the basis of a material erosion process, wherein a sacrificial material may protect sensitive materials, such as a high-k dielectric material, in the gate opening. In one illustrative embodiment, the sacrificial... Agent:

20110073923 - Solid-state imaging device and method for manufacturing solid-state imaging device, and electronic device: A solid-state imaging device includes a first-conductivity-type semiconductor well region, a plurality of pixels each of which is formed on the semiconductor well region and is composed of a photoelectric conversion portion and a pixel transistor, an element isolation region provided between the pixels and in the pixels, and an... Agent: Sony Corporation

20110073924 - Non-volatile memory cell and layout structure of non-volatile memory device: A non-volatile memory cell includes a semiconductor substrate with isolation structures formed therein and thereby transistor region and capacitor region are defined therein. A conductor is disposed over the isolation structures, the transistor region and a first-type doped well disposed in the capacitor region. The conductor includes a capacitor portion... Agent:

20110073925 - Semiconductor device with buried bit lines interconnected to one-side-contact and fabrication method thereof: A semiconductor device with reduced resistance of a buried bit line, and a method for fabricating the same. The method for fabricating a semiconductor device includes etching a semiconductor substrate to form a plurality of active regions which are separated from one another by trenches formed in between, forming a... Agent:

20110073927 - Non-volatile memory device and method for manufacturing the same: According to one embodiment, a non-volatile memory device includes a stacked structure including a memory portion and an electrode having a surface facing the memory portion; and a voltage application portion to apply a voltage to the memory portion to change resistance. The surface includes first and second regions. The... Agent: Kabushiki Kaisha Toshiba

20110073926 - Nonvolatile semiconductor memory device: A nonvolatile semiconductor memory device includes a memory cell array and plural transfer transistors. The plural transfer transistors include: a gate electrode formed on a semiconductor substrate via a gate insulating film; a first diffused region formed in a surface of the semiconductor substrate located under the gate electrode; a... Agent: Kabushiki Kaisha Toshiba

20110073929 - High coupling memory cell: A first dielectric layer is formed over a substrate. A single layer first conductive layer that acts as a floating gate is formed over the first dielectric layer. A trough is formed in the first conductive layer to increase the capacitive coupling of the floating gate with a control gate.... Agent: Micron Technology, Inc.

20110073928 - Non-volatile memory devices having semiconductor barrier patterns and methods of forming such devices: Provided are a non-volatile memory device and a method of forming the same. The non-volatile memory device includes: a tunnel insulation layer on a substrate; a floating gate on the tunnel insulation layer; a blocking insulation layer on the floating gate; a first barrier pattern, between the top of the... Agent:

20110073930 - Non-volatile memory devices and methods of manufacturing the same: Semiconductor devices and methods of forming the same. The semiconductor devices include a tunnel insulation layer on a substrate, a floating gate on the tunnel insulation layer, a gate insulation layer on the floating gate, a low-dielectric constant (low-k) region between the top of the floating gate and the gate... Agent:

20110073931 - Semiconductor device manufacturing method: A plasma nitriding process is followed by a selective etching process which removes a silicon oxynitride film formed on surfaces of both an element separation film and an insulation film while leaving a silicon nitride film formed on an electrode layer. The selective etching process removes the silicon oxynitride film... Agent: Tokyo Electron Limited

20110073932 - Non volatile semiconductor memory device: A non volatile semiconductor memory device includes: a semiconductor substrate comprising element regions; gate structures each comprising a first gate insulation film, a charge storage layer, a second gate insulation film, and a control gate; element isolation insulation films defining the element regions and electrically isolating the element regions; impurity... Agent: Kabushiki Kaisha Toshiba

20110073934 - Semiconductor device and manufacturing method thereof: The invention provides a semiconductor device and its manufacturing method in which a memory transistor and a plurality of thin film transistors that have gate insulating films with different thicknesses are fabricated over a substrate. The invention is characterized by the structural difference between the memory transistor and the plurality... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110073933 - Semiconductor device and method of manufacturing the same: A semiconductor memory device includes: a semiconductor substrate; a first device-isolation insulation film that divides the semiconductor substrate at a first transistor region into first device regions; a second device-isolation insulation film that divides the semiconductor substrate at a second transistor region into second device regions; a plurality of first... Agent: Kabushiki Kaisha Toshiba

20110073936 - Nanocrystal memory with differential energy bands and method of formation: A method of making a semiconductor device using a semiconductor substrate includes forming a first insulating layer having a first band energy over the semiconductor substrate. A first semiconductor layer having a second band energy is formed on the first insulating layer. The first semiconductor layer is annealed to form... Agent: Freescale Semiconductor, Inc.

20110073935 - Nonvolatile semiconductor memory device: In one embodiment, a non-volatile semiconductor memory device has a semiconductor layer having a pair of source/drain regions formed at a predetermined distance and a channel region between the pair of source/drain regions; a first insulating film formed above the semiconductor layer; a charge accumulating film formed above the first... Agent:

20110073937 - Method for fabricating a charge trapping memory device: A method for fabricating a charge trapping memory device includes providing a substrate; forming a first oxide layer on the substrate; forming a number of BD regions in the substrate; nitridizing the interface of the first oxide layer and the substrate via a process; forming a charge trapping layer on... Agent: Macronix International Co., Ltd.

20110073938 - Field-effect semiconductor device and method of producing the same: A semiconductor substrate of an IGFET has drain regions, a p-type first body region, a p−-type second body region, an n-type first source region, and an n+-type second source region, and additionally has multiple pairs of trenches that constitute an IGFET cell. A gate insulating film and a gate electrode... Agent: Sanken Electric Co., Ltd.

20110073939 - Semiconductor device: A semiconductor device may include, but is not limited to: a semiconductor substrate; a first insulating film; a conductive film; and a semiconductor film. The semiconductor substrate has a first hole. The semiconductor substrate has a first region into which a first impurity is introduced. The first region is adjacent... Agent: Elpida Memory, Inc.

20110073940 - Semiconductor device with one-side-contact and method for fabricating the same: A method for fabricating a semiconductor device includes forming a first conductive layer doped with an impurity for forming a cell junction over a semiconductor substrate, forming a second conductive layer over the first conductive layer, forming a plurality of active regions by etching the second conductive layer and the... Agent:

20110073941 - Semiconductor devices including elevated source and drain regions: Methods of fabricating semiconductor devices are provided. A substrate having active patterns and isolating layer patterns is prepared. Each of the isolating layer patterns has an upper surface higher than that of each of the active patterns. A spacer layer having a uniform thickness is formed on the substrate. The... Agent:

20110073942 - High-voltage transistor structure with reduced gate capacitance: In one embodiment, a high voltage field-effect transistor (HVFET) includes a field oxide layer that covers a first well region, the field oxide layer having a first thickness and extending in a second lateral direction from a drain region to near a second well region. A gate oxide covers a... Agent: Power Integrations, Inc.

20110073943 - True csp power mosfet based on bottom-source ldmos: A semiconductor package may comprise a semiconductor substrate, a MOSFET device having a plurality cells formed on the substrate, and a source region common to all cells disposed on a bottom of the substrate. Each cell comprises a drain region on a top of the semiconductor device, a gate to... Agent: Alpha And Omega Semiconductor Incorporated

20110073944 - Semiconductor device and method of manufacturing the semiconductor device: According to one embodiment, a semiconductor device includes: a substrate in which, on a semiconductor substrate of a first conductivity type, a buried layer of a second conductivity type and a semiconductor layer of the second conductivity type are stacked; trench that define an element forming region in the substrate;... Agent: Kabushiki Kaisha Toshiba

20110073945 - Process for manufacturing an integrated device with \"damascene\" field insulation, and integrated device made by such process: An integrated device includes a semiconductor body, in which an STI insulation structure is formed, which delimits laterally first active areas and at least one second active area, respectively, in a low-voltage region and in a power region of the semiconductor body. The integrated device moreover includes low-voltage CMOS components,... Agent: Stmicroelectronics S.r.l.

20110073946 - Ldmos transistor: An LDMOS transistor (100) on a substrate (70a, 70b) of a first conductivity type, comprises a source region (10) with a source portion (73) and a drain region (12). The source portion and drain region are of a second conductivity type opposite to the first conductivity type and are mutually... Agent: Nxp B.v.

20110073947 - Semiconductor device: Provided is a semiconductor device in which the first trench isolation regions is placed between a substrate potential-fixing P-type diffusion region of an ESD protection NMOS transistor and source and drain regions of the ESD protection NMOS transistor, and has a depth greater than a depth of the second trench... Agent:

20110073948 - Semiconductor device: Provided is a semiconductor device including an ESD protection N-MOS transistor isolated from another element by a shallow trench structure, in which the ESD protection N-MOS transistor includes a drain region on which a thin insulating film is formed, and an electrode which receives a signal from an external connection... Agent:

20110073949 - Semiconductor apparatus: A semiconductor apparatus includes an internal circuit, a CMOS composed of a P-channel MOS transistor with a source connected to a high-potential power supply line and a gate connected to the internal circuit, and an N-channel MOS transistor with a source connected to a low-potential power supply line and a... Agent: Kabushiki Kaisha Toshiba

20110073950 - Semiconductor device and method of manufacturing the same: The semiconductor device includes a first MIS transistor including a gate insulating film 92, a gate electrode 108 formed on the gate insulating film 92 and source/drain regions 154, a second MIS transistor including a gate insulating film 96 thicker than the gate insulating film 92, a gate electrode 108... Agent: Fujitsu Limited

20110073951 - Enhanced stress-retention fin-fet devices and methods of fabricating enhanced stress retention fin-fet devices: Fin-FETS and methods of fabricating fin-FETs. The methods include: providing substrate comprising a silicon oxide layer on a top surface of a semiconductor substrate, a stiffening layer on a top surface of the silicon oxide layer, and a single crystal silicon layer on a top surface of the stiffening layer;... Agent: International Business Machines Corporation

20110073952 - Controlling the shape of source/drain regions in finfets: An integrated circuit structure includes a fin field-effect transistor (FinFET) including a semiconductor fin over and adjacent to insulation regions; and a source/drain region over the insulation regions. The source/drain region includes a first and a second semiconductor region. The first semiconductor region includes silicon and an element selected from... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110073954 - Semiconductor device and method of fabricating the same: In a semiconductor substrate in a first section, a channel region having an impurity concentration peak in an interior of the semiconductor substrate is formed, and in the semiconductor substrate in a second section and a third section, channel regions having an impurity concentration peak at a position close to... Agent: Panasonic Corporation

20110073953 - Semiconductor integrated circuit: A plurality of PMOS transistors are provided on a substrate along an X-axis direction such that a gate length direction of each of the PMOS transistors is parallel to the X-axis direction. A plurality of NMOS transistors are provided on the substrate along the X-axis direction such that a gate... Agent: Panasonic Corporation

20110073955 - Isolation trench with rounded corners for bicmos process: A semiconductor device comprising a first transistor device (130) on or in a semiconductor substrate (115) and a second transistor device (132) on or in the substrate. The device further comprises an insulating trench (200) located between the first transistor device and the second transistor device. At least one upper... Agent: Texas Instruments Incorporated

20110073956 - Forming semiconductor resistors in a semiconductor device comprising metal gates by increasing etch resistivity of the resistors: In a replacement gate approach, the polysilicon material may be efficiently removed during a wet chemical etch process, while the semiconductor material in the resistive structures may be substantially preserved. For this purpose, a species such as xenon may be incorporated into the semiconductor material of the resistive structure, thereby... Agent:

20110073957 - Metal gate transistor with resistor: A resistor is disclosed. The resistor is disposed on a substrate, in which the resistor includes: a dielectric layer disposed on the substrate; a polysilicon structure disposed on the dielectric layer; two primary resistance structures disposed on the dielectric layer and at two ends of the polysilicon structure; and a... Agent:

20110073958 - Asymmetric silicon-on-insulator sram cell: A memory cell having N transistors including at least one pair of access transistors, one pair of pull-down transistors, and one pair of pull-up transistors to form a memory cell, wherein N is an integer at least equal to six, wherein each of the access transistors and each of the... Agent: International Business Machines Corporation

20110073960 - Integrated device with raised locos insulation regions and process for manufacturing such device: An embodiment of an integrated device includes a semiconductor body, in which an STI insulating structure is formed, laterally delimiting first active areas and at least one second active area in a low-voltage region and in a power region of the semiconductor body, respectively. Low-voltage CMOS components are housed in... Agent: Stmicroelectronics S.r.l.

20110073959 - Stress engineering in a contact level of semiconductor devices by stressed conductive layers and an isolation spacer: In sophisticated semiconductor devices, strain-inducing materials having a reduced dielectric strength or having certain conductivity, such as metal nitride and the like, may be used in the contact level in order to enhance performance of circuit elements, such as field effect transistors. For this purpose, a strain-inducing material may be... Agent:

20110073962 - Method and apparatus for forming a semiconductor gate: The present disclosure provides an apparatus and method for fabricating a semiconductor gate. The apparatus includes, a substrate having an active region and a dielectric region that forms an interface with the active region; a gate electrode located above a portion of the active region and a portion of the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110073961 - Self-aligned well implant for improving short channel effects control, parasitic capacitance, and junction leakage: A method of forming a self-aligned well implant for a transistor includes forming a patterned gate structure over a substrate, including a gate conductor, a gate dielectric layer and sidewall spacers, the substrate including an undoped semiconductor layer beneath the gate dielectric layer and a doped semiconductor layer beneath the... Agent: International Business Machines Corporation

20110073963 - Superior fill conditions in a replacement gate approach by corner rounding prior to completely removing a placeholder material: In a replacement gate approach, a superior cross-sectional shape of the gate opening may be achieved by performing a material erosion process in an intermediate state of removing the placeholder material. Consequently, the remaining portion of the placeholder material may efficiently protect the underlying sensitive materials, such as a high-k... Agent:

20110073964 - Semiconductor device with oxygen-diffusion barrier layer and method for fabricating same: Methods and apparatus are provided for fabricating a transistor. The transistor comprises a gate stack overlying a semiconductor material. The gate stack comprises a deposited oxide layer overlying the semiconductor material, an oxygen-diffusion barrier layer overlying the deposited oxide layer, a high-k dielectric layer overlying the oxygen-diffusion barrier layer, and... Agent: Freescale Semiconductor, Inc.

20110073965 - Gate pattern of semiconductor device and method for fabricating the same: A method for fabricating a semiconductor device includes forming a recess pattern by selectively etching a substrate; forming a gate dielectric layer filling the recess pattern on the substrate; forming a groove by selectively etching the gate dielectric layer; forming a polysilicon electrode filling the groove; forming an electrode metal... Agent:

20110073966 - Indexing of electronic devices distributed on different chips: An embodiment of a method is proposed for indexing electronic devices. The embodiment includes the steps of forming a plurality of first chips in a first wafer, forming a plurality of second chips in a second wafer, forming the electronic devices by coupling each first chip with a corresponding second... Agent: Stmicroelectronics S.r.l.

20110073967 - Apparatus and method of forming a mems acoustic transducer with layer transfer processes: A method of forming a MEMS microphone forms circuitry and first MEMS microstructure on a first wafer in a first process, and second MEMS microstructure on a second wafer in a second process. The first process is thermally isolated from the second process. The method also layer transfers the second... Agent: Analog Devices, Inc.

20110073968 - Element array, electromechanical conversion device, and process for producing the same: An element array comprises a plurality of elements having a first electrode and a second electrode with a gap therebetween; the first electrode being separated for each of the elements by grooves, an insulating connection substrate being bonded to the first electrode, and a wiring being made from each of... Agent: Canon Kabushiki Kaisha

20110073969 - Sensor system and method for manufacturing same: An assembly and connection technology for a sensor system, including a sensor element having circuit elements integrated into the top side and a carrier for the sensor element, which is simple and robust and which does not require any further packaging measures for protecting the circuit elements and electrical terminals... Agent:

20110073970 - Magnetoresistive element and magnetic memory: According to one embodiment, a magnetoresistive element includes a first magnetic layer with a variable magnetization and an easy-axis in a perpendicular direction to a film surface, a second magnetic layer with an invariable magnetization and an easy-axis in the perpendicular direction, and a first nonmagnetic layer between the first... Agent:

20110073971 - Solid-state imaging device and manufacturing method for the same: A MOS solid-state imaging device having: a semiconductor substrate provided with a pair of source and drain regions in a pixel area, the pair of source and drain regions constituting part of a transistor in the pixel area; an insulating film formed over the semiconductor substrate; a wiring layer formed... Agent:

20110073977 - Amino acid generator and polysiloxane composition containing the same: There is provided an amino acid generator comprising a protecting group for an amino group that is eliminated to generate an amino acid, and a coating film forming composition using the amino acid generator and a polysiloxane composition containing the amino acid generator. A coating film forming composition comprising: a... Agent: Nissan Chemical Industries, Ltd.

20110073976 - Back-side image sensor: A color back-side illuminated image sensor including, on the side of the thin semiconductor layer opposite to the illuminated surface, periodic thickness unevennesses forming an optic network having characteristics which make it capable of reflecting a given wavelength chosen within the range of the wavelengths of an illuminating incident beam.... Agent: Stmicroelectronics S.a.

20110073974 - Semiconductor device and method for manufacturing the same: In one embodiment, a method for manufacturing a semiconductor device includes following steps. An aperture is formed in an interlayer insulating film formed on a semiconductor wafer apart from an integrated circuit portion by etching process. The interlayer insulating film has a dielectric constant smaller than a silicon oxide film... Agent: Kabushiki Kaisha Toshiba

20110073975 - Semiconductor device, electronic apparatus, and manufacturing methods thereof: According to one embodiment, a semiconductor device includes a semiconductor substrate having a first surface and a second surface at an opposite side thereof. The first surface has an active layer with a light-receiving part. The semiconductor device also includes an adhesive layer provided to surround the light-receiving part on... Agent: Kabushiki Kaisha Toshiba

20110073973 - Semiconductor light receiving element: A semiconductor light detecting element includes: a semiconductor substrate; and a distributed Bragg reflector layer of a first conductivity type, an optical absorption layer, and a semiconductor layer of a second conductivity type, sequentially laminated on the semiconductor substrate. The distributed Bragg reflector layer includes first and second alternately laminated... Agent: Mitsubishi Electric Corporation

20110073972 - Vertical mirror in a silicon photonic circuit: A vertical total internal reflection (TIR) mirror and fabrication thereof is made by creating a re-entrant profile using crystallographic silicon etching. Starting with an SOI wafer, a deep silicon etch is used to expose the buried oxide layer, which is then wet-etched (in HF), opening the bottom surface of the... Agent:

20110073978 - Infrared imaging device and method for manufacturing same: According to one embodiment, an infrared imaging device includes a substrate, an infrared absorption unit, a thermoelectric conversion unit, a support body, and an interconnection. The infrared absorption unit is provided on the substrate and apart from the substrate to absorb an infrared ray. The thermoelectric conversion unit is provided... Agent: Kabushiki Kaisha Toshiba

20110073979 - Detection element: The present invention provides a detection element that can suppress leak current from an end face of a semiconductor layer. That is, of an n+ layer and a p+ layer respectively disposed between an i layer, in which an electric charge is generated as a result of being illuminated with... Agent: Fujifilm Corporation

20110073980 - Light detecting apparatus: A light detecting apparatus is provided with a semiconductor substrate, a first electrode layer, and a second electrode layer. The semiconductor substrate has a first conductivity type first semiconductor region, and a second conductivity type second semiconductor region formed on the first semiconductor region and constituting a photodiode based on... Agent: Hamamatsu Photonics K.k.

20110073981 - Semiconductor device and method for manufacturing the same: The present invention provides a semiconductor device formed over an insulating substrate, typically a semiconductor device having a structure in which mounting strength to a wiring board can be increased in an optical sensor, a solar battery, or a circuit using a TFT, and which can make it mount on... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110073982 - Inspection system using back side illuminated linear sensor: An improved inspection system using back-side illuminated linear sensing for propagating charge through a sensor is provided. Focusing optics may be used with a back side illuminated linear sensor to inspect specimens, the back side illuminated linear sensor operating to advance an accumulated charge from one side of each pixel... Agent:

20110073983 - Semiconductor device and method for manufacturing the same: According to an embodiment, there is provided a semiconductor device including a semiconductor substrate having a first surface on which an active layer having a light receiving portion is provided and a second surface to be a light receiving surface for the light receiving portion, a wiring layer provided on... Agent: Kabushiki Kaisha Toshiba

20110073984 - Semiconductor power module package with temperature sensor mounted thereon and method of fabricating the same: Provided are a semiconductor power module package and a method of fabricating the same. The semiconductor power module package includes a substrate, semiconductor chips arranged on a top surface of the substrate, and a temperature sensor mounted on a top surface of at least one of the semiconductor chips. The... Agent: Fairchild Korea Semiconductor Ltd.

20110073985 - Method of generating uniformly aligned well and isolation regions in a substrate and resulting structure: A solution for alleviating variable parasitic bipolar leakages in scaled semiconductor technologies is described herein. Placement variation is eliminated for edges of implants under shallow trench isolation (STI) areas by creating a barrier to shield areas from implantation more precisely than with only a standard photolithographic mask. An annealing process... Agent: International Business Machines Corporation

20110073986 - Semiconductor integrated circuit device and manufacturing method thereof: Provided is a semiconductor integrated circuit device including fuse elements for carrying out laser trimming processing, in which a space width between aluminum interconnects of the first layer to be connected to the adjacent fuse elements is set to less than twice of the thickness of the side wall of... Agent:

20110073988 - Semiconductor component and method of manufacture: A semiconductor component that includes an integrated passive device and method for manufacturing the semiconductor component. Vertically integrated passive devices are manufactured above a substrate. In accordance with one embodiment, a resistor is manufactured in a first level above a substrate, a capacitor is manufactured in a second level that... Agent:

20110073987 - Through substrate features in semiconductor substrates: Through substrate features in semiconductor substrates are described. In one embodiment, the semiconductor device includes a through substrate via disposed in a first region of a semiconductor substrate. A through substrate conductor coil is disposed in a second region of the semiconductor substrate.... Agent:

20110073990 - Capacitor and method for making same: One or more embodiments relate to a method for making a capacitor such as a trench capacitor. The method includes: providing a substrate; forming an opening within the substrate; forming a sidewall spacer over a sidewall surface of the opening; forming a first conductive layer within the opening after forming... Agent:

20110073993 - Laminated thin-film device, manufacturing method thereof, and circuit: The present invention provides a novel capacitor element, laminated thin-film device, and circuit wherein the capacitance dependency on voltage can be appropriately adjusted, and a technology for manufacturing such a capacitor element and laminated thin-film device. In the capacitor element that comprises a pair of electrode layers and a dielectric... Agent: Fujitsu Limited

20110073992 - Manufacturing method of semiconductor device and semiconductor device: A first interlayer dielectric is formed over a substrate, and an electric conductor pillar is formed in the first interlayer dielectric. A damascene wiring part insulating film is formed over an upper surface of the first interlayer dielectric. The damascene wiring part insulating film above the electric conductor pillar is... Agent: Renesas Electronics Corporation

20110073989 - Optical modulator utilizing wafer bonding technology: Optical modulator utilizing wafer bonding technology. An embodiment of a method includes etching a silicon on insulator (SOI) wafer to produce a first part of a silicon waveguide structure on a first surface of the SOI wafer, and preparing a second wafer, the second wafer including a layer of crystalline... Agent:

20110073991 - Redox capacitor and manufacturing method thereof: To provide a redox capacitor that can be used at room temperature and a manufacturing method thereof. Amorphous semiconductor including hydrogen is used as an electrolyte of a redox capacitor. As a typical example of the amorphous semiconductor including hydrogen, an amorphous semiconductor including a semiconductor element such as amorphous... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110073994 - Trench capacitor and method for producing the same: A method of fabricating a trench capacitor, and a trench capacitor fabricated thereby, are disclosed. The method involves the use of a vacuum impregnation process for a sol-gel film, to facilitate effective deposition of high-permittivity materials within a trench in a semiconductor substrate, to provide a trench capacitor having a... Agent: Nxp B.v.

20110073995 - Semiconductor device, fabrication method of the semiconductor devices: In a semiconductor device, a YAG substrate is formed as a single-crystal substrate of any of surface orientations (100), (110), and (111). In the fabrication of the semiconductor device, a TMAl gas is first fed onto the YAG substrate so as to form a nucleation layer made of aluminum, which... Agent: Tokyo University Of Science

20110073996 - Multiple die layout for facilitating the combining of an individual die into a single die: A semiconductor wafer including a plurality of die fabricated therein in a defined pattern. They are separated from each other by a dicing area or street and at least a portion of adjacent die on the wafer include at least a conductive connection between given adjacent die that is electrically... Agent: Silicon Laboratories Inc.

20110073997 - Semiconductor structure and method for making same: One or more embodiments relate to a method for making a semiconductor structure, the method including: forming a first conductive interconnect at least partially through the substrate; and forming a second conductive interconnect over the substrate, wherein the first conductive interconnect and the second conductive interconnect are formed at least... Agent:

20110073998 - Adhesion promotion layer for a semiconductor device: Embodiments of semiconductor devices are provided. In one embodiment, the semiconductor device includes a substrate, an etch stop layer formed on the substrate, an adhesion promotion layer formed directly on the etch stop layer, and a dielectric layer formed directly on the adhesion promotion layer. The etch stop layer may... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110073999 - Mixed alloy lead frame for packaging power semiconductor devices and its fabrication method: This invention discloses a mixed alloy lead frame for power semiconductor devices, which includes a plurality of heat sinks and a pin array; the heat sinks are made of the first material, with positioning holes on their upper parts and welding zones at the center of their lower parts, while... Agent:

20110074000 - Optoelectronic component and method for producing an optoelectronic component: An optoelectronic component including a connection carrier comprising a structured carrier strip in which interspaces are filled with an electrically insulating material and an optoelectronic semiconductor chip attached and electrically connected to a top portion of the connection carrier, wherein the electrically insulating material terminates substantially flush with the carrier... Agent: Osram Opto Semiconductors Gmbh

20110074001 - Chip card having a plurality of components: The present invention relates to a chip card and a method for the production of a chip card having a chip (21) which is arranged in a card body, and having a plurality of components (18, 19, 22) being electrically conductively connected to the chip by means of a conductor... Agent:

20110074002 - Stacking devices at finished package level: An embodiment is a method and apparatus to stack devices. A first finished package level (FPL) device having a first grounded tested die (GTD) is reduced to nearly size of the first GTD. The first FPL has a first plurality of solder balls. The reduced first FPL device is attached... Agent: Virtium Technology, Inc.

20110074003 - Foil based semiconductor package: The present inventions relate to methods and arrangements for using a thin foil to form electrical interconnects in an integrated circuit package. One embodiment of the present invention involves attaching multiple dice to a foil carrier structure. The foil carrier structure is made of a thin foil that is bonded... Agent: National Semiconductor Corporation

20110074004 - Package process and package structure: A package process is provided. An adhesive layer is disposed on a carrier board and then plural first semiconductor devices are disposed on the adhesive layer. A first molding compound formed on the carrier board covers the side walls of the first semiconductor devices and fills the gaps between the... Agent: Advanced Semiconductor Engineering, Inc.

20110074005 - Semiconductor device, method for fabricating a semiconductor device and lead frame, comprising a bent contact section: The invention relates to a semiconductor device having an integrated circuit die and a housing. The housing includes a base surface and at least one lateral surface which extends across to the base surface. In particular, this semiconductor device can be an electronic chip card, such as a universal integrated... Agent:

20110074006 - Rf transistor packages with internal stability network including intra-capacitor resistors and methods of forming rf transistor packages with internal stability networks including intra-capacitor resistors: A packaged RF transistor device includes an RF transistor die including a plurality of RF transistor cells. Each of the plurality of RF transistor cells includes a control terminal and an output terminal. The RF transistor device further includes an RF input lead, and an input matching network coupled between... Agent:

20110074008 - Semiconductor flip chip package: This invention provides a semiconductor flip chip package including a carrier substrate and a flip chip mounted on the carrier substrate. The flip chip comprises a first input/output (I/O) pad and a second I/O pad on an active surface of the flip chip, wherein a switching between the first I/O... Agent:

20110074007 - Thermally enhanced low parasitic power semiconductor package: A method and structure for a dual heat dissipating semiconductor device. A method includes attaching a drain region on a first side of a die, such as a power metal oxide semiconductor field effect transistor (MOSFET) to a first leadframe subassembly. A source region and a gate region on a... Agent:

20110074009 - Isostress grid array and method of fabrication thereof: An electronic device package includes a substrate and wire columns arranged in groups about a neutral stress point of the substrate. The height of the wire columns is substantially uniform for the plural groups of wire columns, and a length of at least one of the wire columns is greater... Agent: Bae Systems Information & Electronic Systems Integration Inc.

20110074010 - Power module substrate, power module, and method for manufacturing power module substrate: A power module substrate includes: a ceramics substrate having a surface; and a metal plate connected to the surface of the ceramics substrate, composed of aluminum, and including Cu at a joint interface between the ceramics substrate and the metal plate, wherein a Cu concentration at the joint interface is... Agent: Mitsubishi Materials Corporation

20110074011 - Mechanical coupling in a multi-chip module using magnetic components: A multi-chip module (MCM) is described. This MCM includes at least two substrates that are remateably mechanically coupled by positive and negative features on facing surfaces of the substrates. These positive and negative features mate with each other. In particular, a positive feature may mate with a given pair of... Agent: Sun Microsystems, Inc.

20110074012 - Substrate with built-in semiconductor element, and method of fabricating substrate with built-in semiconductor element: There is provided a substrate with a built-in semiconductor element, including: a first substrate at which a wiring layer is layered on a dielectric layer; a semiconductor element that is structured to include a distributed constant circuit, and at which plural bonding pads are formed at a peripheral region of... Agent: Oki Electric Industry Co., Ltd.

20110074013 - Film forming method of silicon oxide film, silicon oxide film, semiconductor device, and manufacturing method of semiconductor device: A silicon compound gas, an oxidizing gas, and a rare gas are supplied into a chamber (2) of a plasma processing apparatus (1). A microwave is supplied into the chamber (2), and a silicon oxide film is formed on a target substrate with plasma generated by the microwave. A partial... Agent: Tokyo Electron Limited

20110074023 - Apparatus and methods of forming an interconnect between a workpiece and substrate: Embodiments of an apparatus and methods of forming interconnect between a workpiece and substrate and its application to packaging of microelectronic devices are described herein. Other embodiments may be described and claimed.... Agent:

20110074021 - Device mounting board, and semiconductor module: A device mounting board includes an insulating resin layer, a wiring layer provided on one of main surfaces of the insulating resin layer, and bump electrodes connected electrically to the wiring layer and protruding on a side of the insulating resin layer from the wiring layer. A semiconductor module is... Agent: Sanyo Electric Co., Ltd.

20110074027 - Flip chip interconnection with double post: A microelectronic assembly includes a substrate having a first surface, a plurality of first conductive pads exposed thereon, and a plurality of first metal posts. Each metal post defines a base having an outer periphery and is connected to one of the conductive pads. Each metal post extends along a... Agent: Tessera, Inc.

20110074017 - Method of manufacturing semiconductor device, semiconductor device and multilayer wafer structure: Grooves are formed on the front surfaces of first and second semiconductor wafers each including an aggregate of a plurality of semiconductor chips. The grooves each extend on a dicing line set between the semiconductor chips and to have a larger width than the dicing line. Thereafter the first and... Agent: Renesas Electronics Corporation

20110074019 - Semiconductor device: To improve reliability of a semiconductor device in which wire bonding using a wire made of copper is performed. A semiconductor device is configured so that one of end parts (wide width part) of a copper wire is joined via a bump on a pad (electrode pad) formed over a... Agent: Renesas Electronics Corporation

20110074016 - Semiconductor device and manufacturing method therefor: The size and thickness of a semiconductor device are reduced. A semiconductor package with a flip chip bonding structure includes: a semiconductor chip having a main surface with multiple electrode pads formed therein and a back surface located on the opposite side thereto; four lead terminals each having an upper... Agent: Renesas Electronics Corporation

20110074020 - Semiconductor device and method for mounting semiconductor device: A method for mounting a semiconductor device by mounting a semiconductor chip on a board by flip chip bonding, comprising: contacting an Au bump of the semiconductor chip with a Sn—Bi solder; and heating the Sn—Bi solder at a temperature which is not lower than the melting point thereof and... Agent: Fujitsu Limited

20110074028 - Semiconductor device and method of dissipating heat from thin package-on-package mounted to substrate: A semiconductor device has a first substrate with a central region. A plurality of bumps is formed around a periphery of the central region of the first substrate. A first semiconductor die is mounted to the central region of the first substrate. A second semiconductor die is mounted to the... Agent: Stats Chippac, Ltd.

20110074014 - Semiconductor device and method of forming adhesive material to secure semiconductor die to carrier in wlcsp: A semiconductor device is made by providing a temporary carrier and providing a semiconductor die having a plurality of bumps formed on its active surface. An adhesive material is deposited as a plurality of islands or bumps on the carrier or active surface of the semiconductor die. The adhesive layer... Agent: Stats Chippac, Ltd.

20110074024 - Semiconductor device and method of forming bump-on-lead interconnection: A semiconductor device has a semiconductor die with a plurality of composite bumps formed over a surface of the semiconductor die. The composite bumps have a fusible portion and non-fusible portion, such as a conductive pillar and bump formed over the conductive pillar. The composite bumps can also be tapered.... Agent:

20110074022 - Semiconductor device and method of forming flipchip interconnect structure: A semiconductor device has a semiconductor die with a plurality of bumps or interconnect structures formed over an active surface of the die. The bumps can have a fusible portion and non-fusible portion, such as a conductive pillar and bump formed over the conductive pillar. A plurality of conductive traces... Agent: Stats Chippac, Ltd.

20110074026 - Semiconductor device and method of forming insulating layer on conductive traces for electrical isolation in fine pitch bonding: A semiconductor device has a semiconductor die with a plurality of bumps formed over an active surface of the semiconductor die. A plurality of first conductive traces with interconnect sites is formed over a substrate. The bumps are wider than the interconnect sites. A surface treatment is formed over the... Agent: Stats Chippac, Ltd.

20110074018 - Semiconductor device and method of manufacturing the same: In one embodiment, a method of manufacturing a semiconductor device is disclosed. The method includes forming a cured film of an insulation resin on a surface of a first semiconductor chip and flip-chip bonding a second semiconductor via a bump on the first semiconductor chip on which the cured film... Agent: Kabushiki Kaisha Toshiba

20110074025 - Semiconductor module, method of manufacturing semiconductor module, and mobile device: An electrode for a semiconductor device is formed on the mounting surface (particularly, the outer periphery thereof) of a semiconductor substrate in a semiconductor module. In order to secure a large gap between the electrodes, an insulating layer is formed on the electrode. Also formed are a plurality of bumps... Agent: Sanyo Electric Co., Ltd.

20110074015 - Stacked semiconductor device and a method for manufacturing the same: An upper-side semiconductor chip is stacked on a lower-side semiconductor chip by connection through microbumps. In the lower-side semiconductor chip that forms a gap with the upper-side semiconductor chip to be filled with an underfill resin, and is sealed with a molding resin, a polyimide film is formed on the... Agent: Kabushiki Kaisha Toshiba

20110074029 - Flip-chip package covered with tape: A manufacturing method of a semiconductor device includes arranging a melted resin on a substrate, arranging a semiconductor chip on the melted resin, pressing the semiconductor chip and flip-chip mounting the semiconductor chip on the substrate, and hardening the melted resin with the melted resin being subjected to a fluid... Agent:

20110074031 - Back side metallization with superior adhesion in high-performance semiconductor devices: In sophisticated semiconductor devices, the metal-containing layer stack at the back side of the substrate may be provided so as to obtain superior adhesion to the semiconductor material in order to reduce the probability of creating leakage paths in a bump structure upon separating the substrate into individual semiconductor chips.... Agent:

20110074030 - Method for preventing al-cu bottom damage using tin liner: A semiconductor device and related method for fabricating the same include providing a stacked structure including an insulating base layer and lower and upper barrier layers with a conductive layer in between, etching the stacked structure to provide a plurality of conductive columns that each extend from the lower barrier... Agent: Macronix International Co., Ltd.

20110074033 - Crack stop trenches: Structures and methods of forming crack stop trenches are disclosed. The method includes forming active regions disposed in cell regions of a substrate, the cell regions separated by dicing channels, and forming back end of line (BEOL) layers over the substrate, the BEOL layers being formed over the cell regions... Agent:

20110074032 - Semiconductor device: A semiconductor device which is capable of preventing interface peeling and a crack from occurring in the vicinity of the edge part of a rewiring layer is provided. The semiconductor device includes a semiconductor substrate, an electrode pad formed on the semiconductor substrate, a first insulation film formed on the... Agent: Oki Semiconductor Co., Ltd.

20110074034 - Method of manufacturing a semiconductor component and structure: A semiconductor component and methods for manufacturing the semiconductor component that includes a double exposure of a layer of photoresist or the use of multiple layers of photoresist. A metallization structure is formed on a layer of electrically conductive material that is disposed on a substrate and a layer of... Agent:

20110074038 - Methods for forming interconnect structures that include forming air gaps between conductive structures: A method for forming a semiconductor structure includes forming a sacrificial layer over a substrate. A first dielectric layer is formed over the sacrificial layer. A plurality of conductive structures are formed within the sacrificial layer and the first dielectric layer. The sacrificial layer is treated through the first dielectric... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20110074037 - Semiconductor device: A device has a semiconductor chip, a wiring board, a support which supports the semiconductor chip on the wiring board and forms a gap between the semiconductor chip and the wiring board, and a sealing resin injected into the gap and covering the semiconductor chip.... Agent: Elpida Memory, Inc.

20110074035 - Semiconductor memory apparatus and method for fabricating the same: A method for fabricating a semiconductor memory apparatus is provided to minimize failure of the semiconductor memory apparatus and to secure a processing margin. The method also provides for minimizing the deterioration of an operating speed and the operational stability, and minimizing the increase of resistance occurring as a result... Agent: Hynix Semiconductor Inc.

20110074036 - Via contact structures and methods for integrated circuits: A method for fabricating an integrated circuit device includes providing a semiconductor substrate having a first region and a second region, e.g., peripheral region. The method forms a stop layer overlying the first and second regions and a low k dielectric layer (e.g., k<2.9) overlying the stop layer in the... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20110074041 - Circuit board with oval micro via: Various circuit boards and methods of manufacturing the same are disclosed. In one aspect, a method of manufacturing is provided that includes forming a first interconnect layer of a circuit board. The first interconnect layer includes a first conductor structure. A first via is formed in the first interconnect layer... Agent:

20110074042 - Electronic device: The electronic device includes the substrate, the electronic component mounted on a main surface of the substrate, a plurality of external terminals formed on a back surface of the substrate, and a plurality of interconnects formed on the back surface of the substrate, wherein the plurality of interconnects includes a... Agent: Renesas Electronics Corporation

20110074043 - Method of forming vias in semiconductor substrates and resulting structures: Methods for forming through vias in a semiconductor substrate and resulting structures are disclosed. In one embodiment, a through via may be formed by forming a partial via from an active surface through a conductive element thereon and a portion of the substrate underlying the conductive element. The through via... Agent: Micron Technology, Inc.

20110074039 - Reliable interconnect for semiconductor device: A method for forming a semiconductor device is presented. A substrate prepared with a dielectric layer formed thereon is provided. A sacrificial and a hard mask layer are formed on the dielectric layer. The dielectric, sacrificial and hard mask layers are patterned to form an interconnect opening. The interconnect opening... Agent: Chartered Semiconductor Manufacturing, Ltd.

20110074040 - Semiconductor device and method for making same: One or more embodiments may relate to a method for making a semiconductor structure, the method including: forming an opening at least partially through a workpiece; and forming an enclosed cavity within the opening, the forming the cavity comprising forming a paste within the opening.... Agent:

20110074044 - Patternable low-k dielectric interconnect structure with a graded cap layer and method of fabrication: An interconnect structure is provided that includes at least one patterned and cured low-k material located on a surface of a patterned graded cap layer. The at least one cured and patterned low-k material and the patterned graded cap layer each have conductively filled regions embedded therein. The patterned and... Agent: International Business Machines Corporation

20110074045 - Interposer, semiconductor chip mounted sub-board, and semiconductor package: A semiconductor device can be manufactured with a high non-defect ratio, making it possible to easily guarantee the KGD (Known-Good-Die) of semiconductor chips, when configuring one packaged semiconductor device on which a plurality of semiconductor chips is mounted. Utilizing each semiconductor chip is made possible without limits on terminal position,... Agent: Genusion Inc.

20110074046 - Printed wiring board and manufacturing method thereof: A printed wiring board is configured to be connected to an organic substrate in a state where a semiconductor chip is mounted thereon. A plurality of first layers are formed of a material having the same coefficient of thermal expansion as the semiconductor chip. A plurality of second layers are... Agent: Shinko Electric Industries Co., Ltd.

20110074047 - Semiconductor device and method of forming pad layout for flipchip semiconductor die: A semiconductor device has a semiconductor die with a die pad layout. Signal pads in the die pad layout are located primarily near a perimeter of the semiconductor die, and power pads and ground pads are located primarily inboard from the signal pads. The signal pads are arranged in a... Agent:

20110074048 - Semiconductor device and method of manufacturing the same: A semiconductor device of the present invention includes: a base material (5); a semiconductor element (2) mounted on the base material (5); a solder resist (11a) covering a prescribed region of the base material (5); and a molding resin body (3) integrally covering the semiconductor element (2) and a part... Agent: Panasonic Corporation

20110074049 - Method of manufacturing semiconductor device, mask and semiconductor device: A method of manufacturing a semiconductor device answerable to refinement of circuits by correctly connecting adjacent small patterns with each other with excellent reproducibility in connective exposure and a semiconductor device manufactured by this method are proposed. According to this method of manufacturing a semiconductor device, connective exposure is performed... Agent: Renesas Electronics Corporation

20110074050 - Film for semiconductor device: The present invention provides a film for a semiconductor device, which is capable of preventing interface delamination between each of the films, a film lifting phenomenon, and transfer of the adhesive film onto the cover film even during transportation or after long-term storage in a low temperature condition. The film... Agent:

20110068312 - Nonvolatile memory device: According to one embodiment, a nonvolatile memory device comprises a plurality of first lines, a plurality of second lines, and memory cells. Each of the memory cells comprise a variable resistor, and a diode. The variable resistor includes a first metal oxide film and is configured to reversibly change resistance... Agent: Kabushiki Kaisha Toshiba

20110068313 - Memory devices with enhanced isolation of memory cells, systems including same and methods of forming same: Memory cells of a memory device including a variable resistance material have a cavity between the memory cells. Electronic systems include such memory devices. Methods of forming a memory device include providing a cavity between memory cells of the memory device.... Agent: Micron Technology, Inc.

20110068316 - Nonvolatile memory element and nonvolatile memory device: According to one embodiment, a nonvolatile memory device includes a plurality of nonvolatile memory elements each of that includes a resistance change film. The resistance change film is capable of recording information by transitioning between a plurality of states having different resistances in response to at least one of a... Agent:

20110068317 - Phase change memory devices, methods of manufacturing and methods of operating the same: A phase change memory device includes a switching device and a storage node connected to the switching device. The storage node includes a bottom stack, a phase change layer disposed on the bottom stack and a top stack disposed on the phase change layer. The phase change layer includes a... Agent:

20110068314 - Semiconductor memory device: A semiconductor memory device of an embodiment includes: a cathode electrode formed of a p-type semiconductor material; a resistance change film being in contact with the cathode electrode; and an anode electrode being contact with the resistance change film.... Agent: Kabushiki Kaisha Toshiba

20110068315 - Semiconductor memory device including resistance-change memory: A semiconductor memory device includes first lines and second lines and a memory cell array. The first lines and second lines are formed to intersect each other. The memory cell array includes memory cells arranged at intersections of the first lines and the second lines and each formed by connecting... Agent:

20110068319 - Information recording and reproducing device: According to one embodiment, an information recording and reproducing device includes a stacked body. The stacked body includes a first layer, a second layer and a recording layer provided between the first layer and the second layer. The recording layer includes a phase-change material and a crystal nucleus. The phase-change... Agent: Kabushiki Kaisha Toshiba

20110068318 - Semiconductor memory device and method of manufacturing the same: According to one embodiment, a semiconductor memory device includes a substrate, an upper-layer wire provided on the substrate, a lower-layer wire provided on the substrate, a memory cell located at an intersection of the upper-layer wire and the lower-layer wire and includes a diode and a storage layer, a conductive... Agent:

20110068320 - Quantum well graphene structure: An electronic device employing a graphene layer as a charge carrier layer. The graphene layer is sandwiched between layers that are constructed of a material having a highly ordered crystalline structure and a high dielectric constant. The highly ordered crystalline structure of the layers surrounding the graphene layer has low... Agent:

20110068321 - Semiconductor nanoparticle-based materials: In various embodiment, a primary particle includes a primary matrix material containing a population of semiconductor nanoparticles, with each primary particle further comprising an additive to enhance the physical, chemical and/or photo-stability of the semiconductor nanoparticles. A method of preparing such particles is described. Composite materials and light-emitting devices incorporating... Agent: Nanoco Technologies Limited

20110068322 - Semiconductor nanoparticle-based materials: In various embodiments, the present invention relates to a plurality of coated primary particles, each primary particle including a primary matrix material and containing a population of semiconductor nanoparticles, wherein each primary particle is provided with a separate layer of a surface coating material. Various methods of preparing such particles... Agent: Nanoco Technologies Limited

20110068323 - Local bottom gates for graphene and carbon nanotube devices: Transistor devices having nanoscale material-based channels and techniques for the fabrication thereof are provided. In one aspect, a transistor device includes a substrate; an insulator on the substrate; a gate embedded in the insulator with a top surface of the gate being substantially coplanar with a surface of the insulator;... Agent: International Business Machines Corporation

20110068324 - N-type transistor, production methods for n-type transistor and n-type transistor-use channel, and production method of nanotube structure exhibiting n-type semiconductor-like characteristics: An object of the present invention is to provide a new n-type transistor, different from the prior art, using a channel having a nanotube-shaped structure, and having n-type semiconductive properties. To realize this, a film of a nitrogenous compound 6 is formed directly on a channel 5 of a transistor... Agent: Japan Science And Technology Agency

20110068325 - Diodes, and methods of forming diodes: Some embodiments include methods of forming diodes in which a first electrode is formed to have a pedestal extending upwardly from a base. At least one layer is deposited along an undulating topography that extends across the pedestal and base, and a second electrode is formed over the least one... Agent: Micron Technology, Inc.

20110068326 - Schottky barrier tunnel transistor and method for fabricating the same: A Schottky barrier tunnel transistor includes a gate electrode, and source and drain regions. The gate electrode is formed over a channel region of a substrate to form a Schottky junction with the substrate. The source and drain regions are formed in the substrate exposed on both sides of the... Agent:

20110068328 - Halogen-containing perylenetetracarboxylic acid derivatives and the use thereof: S

20110068332 - Hybrid dielectric material for thin film transistors: Thin-film transistors are made using a hybrid silica-silicone material as an insulating material. The hybrid silica-silicone material may be deposited by plasma-enhanced chemical vapor deposition from siloxanes and oxygen. These hybrid materials may be employed as the gate dielectric, as a subbing layer, and/or as a back channel passivating layer.... Agent: The Trustees Of Princeton University

20110068330 - Light emitting device: According to one embodiment, a light emitting device includes a first reflective layer, a first light emitting element, a second reflective layer and a second light emitting element stacked in this order. The first reflective layer is configured to reflect light in a first wavelength band. The first light emitting... Agent: Kabushiki Kaisha Toshiba

20110068329 - Optoelectronic device: The present invention relates to an opto-electronic device comprising a first layer and a second layer on a substrate, characterised in that the first layer comprises an electrode material containing fluorine-containing groups and the second layer comprises a polymer containing fluorine-containing groups, where an adhesive fluorine-fluorine interaction exists between some... Agent: Merck Patent Gmbh

20110068327 - Organic electroluminescence element including metal doped molybdenum oxide layer and method for producing the same: That is, the present invention provides the organic electroluminescence element comprising an anode, a light-emitting layer and a cathode, and further comprising a metal doped molybdenum oxide layer provided between the anode and the light-emitting layer; and the method for producing the organic electroluminescence element including a stacking step to... Agent: Sumitomo Chemical Company, Limited

20110068331 - Organic light emitting device and manufacturing method thereof: An organic light emitting device comprises a first substrate, a first electrode formed on the first substrate, a hole transporting layer formed on the first electrode, a light emitting layer formed on the hole transporting layer, a second electrode formed on the light emitting layer; and a mixture layer formed... Agent:

20110068337 - Display and method for manufacturing the same: A display includes a substrate main body, a thin film transistor (TFT) on the substrate main body, the TFT including an oxide semiconductor layer and a metal oxide film sequentially stacked on top of each other.... Agent:

20110068335 - Oxide semiconductor film and semiconductor device: It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110068333 - Pixel structure and method for manufacturing the same: A method for manufacturing a pixel structure includes providing a substrate including a transistor region and a pixel region, forming at least one gate electrode on the transistor region, forming an insulating layer on the substrate to overlay the gate electrode, and forming a patterned semi-conductive layer on the surface... Agent: Chimei Innolux Corporation

20110068334 - Semiconductor device: Disclosed is a semiconductor device which consumes low power and has high reliability and tolerance for electrostatic discharge. The semiconductor device includes, over a first substrate, a pixel portion and a driver circuit portion both of which have a thin film transistor having an oxide semiconductor layer. The semiconductor device... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110068336 - Semiconductor element and method for manufacturing the same: An object is to provide a thin film transistor and a method for manufacturing the thin film transistor including an oxide semiconductor with a controlled threshold voltage, high operation speed, a relatively easy manufacturing process, and sufficient reliability. An impurity having influence on carrier concentration in the oxide semiconductor layer,... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110068338 - Method for producing thin film transistor and thin film transistor: A metallic wiring film, which is not exfoliated even when exposed to plasma of hydrogen, is provided. A metallic wiring film is constituted by an adhesion layer in which Al is added to copper and a metallic low-resistance layer which is disposed on the adhesion layer and made of pure... Agent: Ulvac, Inc.

20110068339 - Semiconductor device and method for manufacturing the same: A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110068341 - Tft-lcd array substrate and manufacturing method thereof: An embodiment of the invention relates to a TFT-LCD array substrate comprising a substrate, a gate line and a data line formed on the substrate, a pixel electrode and a thin film transistor formed in a pixel region defined by the gate line and the data line, wherein the thin... Agent: Beijing Boe Optoelectronics Technology Co., Ltd.

20110068340 - Thin film transistor array panel and method for manufacturing the same: A thin film transistor array panel includes an insulating substrate. A gate line is formed on the insulating substrate and has a gate electrode. A gate insulating layer is formed on the gate line. A semiconductor layer is formed on the gate insulating layer and overlaps the gate electrode. Diffusion... Agent:

20110068344 - Electronic device including a trench and a conductive structure therein: A process of forming an electronic device can include providing a workpiece comprising a substrate, including an underlying doped region, and a semiconductor layer overlying the underlying doped region, wherein the semiconductor layer has a primary surface spaced apart from the underlying doped region. The process can also include forming... Agent:

20110068342 - Laser process for minimizing variations in transistor threshold voltages: A laser method is provided for minimizing variations in transistor threshold voltages. The method supplies a wafer with a laser-crystallized active semiconductor film having a top surface with a first surface roughness. The method laser anneals the active semiconductor film, and in response to the laser annealing, melts the top... Agent:

20110068343 - Thin film transistor and manufacturing method of the same: To achieve TFT having a high light-resistance characteristic with a suppressed light leak current at low cost by simplifying the manufacturing processes. The TFT basically includes: a light-shielding film formed on a glass substrate that serves as an insulating substrate; an insulating film formed on the light-shielding film; a semiconductor... Agent: Nec Lcd Technologies, Ltd.

20110068345 - Pixel unit: A pixel unit is disposed on a substrate, and the pixel unit includes a thin film transistor (TFT), a patterned protection layer, and a pixel electrode. The TFT is disposed on the substrate. The patterned protection layer is disposed on the TFT. The patterned protection layer is porous and has... Agent: Au Optronics Corporation

20110068346 - Display device: A display device includes a wire substrate including a wire unit for driving the display device, an integrated circuit chip mounted at the wire substrate, and a pad unit extended from the wire unit to be disposed between the wire substrate and the integrated circuit chip. The pad unit is... Agent: Samsung Mobile Display Co., Ltd.

20110068347 - Nitride semiconductor structure and method of making same: A structure method for producing same provides suppressed lattice defects when epitaxially forming nitride layers over non-c-plane oriented layers, such as a semi-polar oriented template layer or substrate. A patterned mask with “window” openings, or trenches formed in the substrate with appropriate vertical dimensions, such as the product of the... Agent: Palo Alto Research Center Incorporated

20110068349 - Semiconductor light emitting element, method for manufacturing semiconductor light emitting element, and lamp: A semiconductor light-emitting device (1) of the present invention includes a substrate (101); a laminate semiconductor layer (20) formed by sequentially laminating an n-type semiconductor layer (104), a light-emitting layer (105), and a p-type semiconductor layer (106) on the substrate (101); and a translucent electrode layer (109) formed on a... Agent: Showa Denko K.k.

20110068348 - Thin body mosfet with conducting surface channel extensions and gate-controlled channel sidewalls: A thin body MOSFET with conducting surface channel extensions and gate-controlled channel sidewalls is described. One embodiment is a MOSFET comprising a semiconductor substrate; a channel layer disposed on a top surface of the substrate; a gate dielectric layer interposed between a gate electrode and the channel layer; and dielectric... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110068350 - Diamond semiconductor devices and associated methods: Semiconductor devices and methods for making such devices are provided. One such method may include forming a transparent diamond layer having a SiC layer coupled thereto, where the SiC layer has a crystal structure that is substantially epitaxially matched to the transparent diamond layer, forming epitaxially a plurality of semiconductor... Agent:

20110068352 - Diamond semiconductor element and process for producing the same: An integrated optical waveguide has a first optical waveguide, a second optical waveguide, and a groove. The second optical waveguide is coupled to the first optical waveguide and has a refractive index that is different from the first optical waveguide. The groove is disposed so as to traverse an optical... Agent: Nippon Telegraph And Telephone Corporation

20110068351 - Method of forming three dimensional features on light emitting diodes for improved light extraction: A method is disclosed for obtaining a high-resolution lenticular pattern on the surface of a light emitting diode. The method comprises imprinting a patterned sacrificial layer of etchable material that is positioned on a semiconductor surface that is in turn adjacent a light emitting active region, and thereafter etching the... Agent:

20110068353 - Semiconductor device: A semiconductor device (A1) includes a first n-type semiconductor layer (11), a second n-type semiconductor layer (12), a p-type semiconductor layer (13), a trench (3), an insulating layer (5), a gate electrode (41), and an n-type semiconductor region (14). The p-type semiconductor layer (13) includes a channel region that is... Agent: Rohm Co., Ltd.

20110068354 - High power led lighting device using high extraction efficiency photon guiding structure: The present invention discloses a high power light emitting device using a high extraction efficiency photon-guiding structure for producing high-efficiency white light output with large viewing angle and large amount of light emitted from the side surfaces so that they can provide different light patterns for different applications such as... Agent: Shiled Group International

20110068355 - Light emitting device and light emitting device package: A light emitting device and a light emitting device package including the same are provided. The light emitting device may include a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, a first electrode on the light emitting structure,... Agent:

20110068361 - High performance light-emitting devices: A light emitting device in the form of a layered structure has a passive bottom multilayer stack including a cathode layer, a cavity layer including a light emitting region, a passive top multilayer stack including a hole transport layer, and a transparent anode layer. The passive bottom and top multilayer... Agent: National Research Council Of Canada

20110068359 - Light-emitting element: A light-emitting element includes a semiconductor laminated structure including a first semiconductor layer, a light-emitting layer and a second semiconductor layer, an insulation layer provided on the semiconductor laminated structure, a first wiring including a first vertical conducting portion and a first planar conducting portion and being electrically connected to... Agent: Toyoda Gosei Co., Ltd.

20110068356 - Method of manufacturing light emitting diode packaging lens and light emmiting diode package: A method of manufacturing light emitting diode packaging lens and packages made by using the method are disclosed in the present invention. By using electrophoretic deposition, one or more layers of phosphors are coated onto one surface of a cup which has a curved portion. The cup is used for... Agent: Walsin Lihwa Corporation

20110068357 - Organic electroluminescent element: m

20110068358 - Photoelectric device, method of fabricating the same and packaging apparatus for the same: A method for fabricating a photoelectric device initially provides a ceramic substrate comprising a thermal dissipation layer on a bottom layer of the ceramic substrate, an electrode layer on the top surface of the ceramic substrate, and a reflective structure in cavities of the ceramic substrate. Next, a plurality of... Agent: Advanced Optoelectronic Technology Inc.

20110068360 - Semiconductor light emitting element, method for manufacturing the same, and light emitting device: The present invention provides a semiconductor light emitting element with excellent color rendering properties, a method for manufacturing the semiconductor light emitting element, and a light emitting device. The semiconductor light emitting element includes: a semiconductor substrate that has a convex portion having a tilted surface as an upper face,... Agent: Kabushiki Kaisha Toshiba

20110068362 - Light-emitting devices having multiple encapsulation layers with at least one of the encapsulation layers including nanoparticles and methods of forming the same: A light-emitting device includes an active region that is configured to emit light responsive to a voltage applied thereto. A first encapsulation layer at least partially encapsulates the active region and includes a matrix material and nanoparticles, which modify at least one physical property of the first encapsulation layer. A... Agent:

20110068363 - Light emitting device and method of manufacturing the same: A method of manufacturing a light emitting device, including the steps of: (A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type, over a substrate; and (B)... Agent: Sony Corporation

20110068366 - Bi-directional scr esd device: The present invention discloses a bi-directional SCR ESD device, comprising: a substrate; a first well located in the substrate, which is floating and has a first conductivity type; a second well and a third well both located in the first well and both having a second conductivity type, the second... Agent: Richtek Technology Corporation

20110068364 - Bidirectional electrostatic discharge protection structure for high voltage applications: Semiconductor structures providing protection against electrostatic events of both polarities are provided. A pair of p-n junctions is provided underneath a shallow trench isolation portion between a first-conductivity-type well and each of a signal-side second-conductivity-type well and an electrical-ground-side second-conductivity-type well in a semiconductor substrate. A second-conductivity-type doped region and... Agent: International Business Machines Corporation

20110068365 - Isolated scr esd device: The present invention discloses an isolated SCR ESD device, comprising: a substrate; a first well located in the substrate, which is floating and has a first conductivity type; a first high density doped region located in the first well and having a second conductivity type; a second well nearby the... Agent: Richtek Technology Corporation

20110068367 - Double-sided heterojunction solar cell based on thin epitaxial silicon: One embodiment of the present invention provides a double-sided heterojunction solar cell. The solar cell includes a lightly doped epitaxial crystalline Si (c-Si) base layer, a front-side passivation layer situated on the front side of the lightly doped epitaxial c-Si base layer, a back-side passivation layer situated on the back... Agent: Sierra Solar Power, Inc.

20110068369 - Metal gate and high-k dielectric devices with pfet channel sige: A method for fabricating a circuit structure is disclosed. The method includes depositing epitaxially a SiGe layer onto both NFET and PFET portions of a Si surface. Blanket disposing a first sequence of layers over the SiGe layer, including a high-k dielectric and a metal, and incorporating this first sequence... Agent: International Business Machines Corporation

20110068368 - Semiconductor device comprising a honeycomb heteroepitaxy: A semiconductor device comprising a honeycomb heteroepitaxy and method for making same are described. One embodiment is a method comprising defining a mask on a silicon substrate, the mask comprising a plurality of nano-size openings therethrough; subsequent to the defining, creating essentially defect-free non-silicon semiconductor nano-islands on portions of a... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110068371 - Group iii nitride semiconductor device, production method therefor, power converter: Provided is an HEMT exhibiting a normally-off characteristic and low on-state resistance, which includes a first carrier transport layer; two separate second carrier transport layers formed of undoped GaN and provided on two separate regions of the first carrier transport layer; and carrier supply layers formed of AlGaN and respectively... Agent: Toyoda Gosei Co., Ltd.

20110068370 - Power electronic devices, methods of manufacturing the same, and integrated circuit modules including the same: Power electronic devices including 2-dimensional electron gas (2DEG) channels and methods of manufacturing the same. A power electronic device includes lower and upper material layers for forming a 2DEG channel, and a gate contacting an upper surface of the upper material layer. A region below the gate of the 2DEG... Agent: Samsung Electronics Co., Ltd.

20110068372 - Sensors using high electron mobility transistors: Embodiments of the invention include sensors comprising AlGaAs/GaAs high electron mobility transistors (HEMTs), inGaP/GaAs HEMTs. InAlAs/InGaAs HEMTs, AlGaAs/InGaAs PHEMTs, InAlAs/InGaAs PHEMTs, Sb based HEMTs, or InAs based HEMTs, the HEMTs having functionalization at a gate surface with target receptors. The target receptors allow sensitivity to targets (or substrates) for detecting... Agent: University Of Florida Research Foundation, Inc.

20110068373 - Semiconductor memory device: A semiconductor memory device according to an embodiment includes: a cell array block having, above a semiconductor substrate, a plurality of first and second wirings intersecting with one another, and a plurality of memory cells, the first and second wirings being separately formed in a plurality of layers in a... Agent: Kabushiki Kaisha Toshiba

20110068374 - Integrated circuit having microelectromechanical system device and method of fabricating the same: An integrated circuit (IC) having a microelectromechanical system (MEMS) device buried therein is provided. The integrated circuit includes a substrate, a metal-oxide semiconductor (MOS) device, a metal interconnect, and the MEMS device. The substrate has a logic circuit region and a MEMS region. The MOS device is located on the... Agent: United Microelectronics Corp.

20110068375 - Multi-gate semiconductor devices with improved carrier mobility: A multi-gate device is disclosed. In one aspect, the device includes a substrate having a first semiconductor layer of a first carrier mobility enhancing parameter, a buried insulating layer, and a second semiconductor layer with a second carrier mobility enhancing parameter. The device also includes a first active region electrically... Agent: Imec

20110068376 - High breakdown voltage double-gate semiconductor device: A double-gate semiconductor device includes a MOS gate and a junction gate, in which the bias of the junction gate is a function of the gate voltage of the MOS gate. The breakdown voltage of the double-gate semiconductor device is the sum of the breakdown voltages of the MOS gate... Agent:

20110068377 - High voltage junction field effect transistor with spiral field plate: In one embodiment, a junction field effect transistor having a substrate, wherein formed on the substrate is a graded n-doped region having a high doping concentration in an inner region and a low doping concentration in an outer region, with a p-doped buried region adjacent to the graded n-doped region... Agent:

20110068379 - Method of manufacturing semiconductor device: A gate pattern is formed on a semiconductor substrate. An interlayer insulating layer is formed on the semiconductor substrate and then etched by using a SEG mask to form a SEG contact formation region. An exposed portion of the semiconductor substrate in the SEG contact formation region is uniformly grown... Agent: Hynix Semiconductor Inc.

20110068380 - Semiconductor device with bulb-type recessed channel and method for fabricating the same: A method for fabricating a semiconductor device includes providing a substrate having a bulb-type recessed region, forming a gate insulating layer over the bulb-type recessed region and the substrate, and forming a gate conductive layer over the gate insulating layer. The gate conductive layer fills the bulb-type recessed region. The... Agent: Hynix Semiconductor Inc.

20110068378 - Semiconductor devices and methods of forming semiconductor devices having diffusion regions of reduced width: Semiconductor devices and methods for forming semiconductor devices are provided, including semiconductor devices that comprise one or more diffusion region in a semiconductor, the one or more diffusion regions being adjacent to a gate formed adjacent to a surface of the semiconductor (e.g., a semiconductor substrate). The one or more... Agent: Micron Technology, Inc.

20110068381 - Image sensor pixel circuit: A pixel circuit of an image sensor includes a sense node for storing a charge transferred from one or more photodiodes, a source follower transistor having its gate coupled to the sense node and its source node coupled to an output line of the pixel circuit via a read transistor,... Agent: Stmicroelectronics (crolles 2) Sas

20110068382 - Two-dimensional time delay integration visible cmos image sensor: A two dimensional time delay integration CMOS image sensor having a plurality of pinned photodiodes, each pinned photodiode collects a charge when light strikes the pinned photodiode, a plurality of electrodes separating the plurality of pinned photodiodes, the plurality of electrodes are configured for two dimensional charge transport between two... Agent:

20110068383 - Semiconductor device: It is an object of the present invention to surely protect a predetermined semiconductor element or a predetermined semiconductor element group in an analog block from a noise generated from a digital block. A semiconductor device according to the present invention includes a semiconductor substrate, a digital block to be... Agent: Renesas Electronics Corporation

20110068384 - Semiconductor device comprising buried word lines: A semiconductor device includes: an isolation layer for defining a plurality of active areas of a substrate, where the isolation layer is disposed on the substrate; a plurality of buried word lines having upper surfaces that are lower than the upper surfaces of the active areas, being surrounded by the... Agent:

20110068385 - Semiconductor device: It is an object of the invention to provide semiconductor devices which can protect privacy of consumers or holders of commercial products and control the communication range according to use, even when the semiconductor device which can exchange data without contact is mounted on the commercial products. A semiconductor device... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110068386 - Direct contact in trench with three-mask shield gate process: A semiconductor device and a method for making a semiconductor device are disclosed. A trench mask may be applied to a semiconductor substrate, which is etched to form trenches with three different widths. A first conductive material is formed at the bottom of the trenches. A second conductive material is... Agent: Alpha & Omega Semiconductor Incorporated

20110068388 - Semiconductor device and method for manufacturing the same: An object is to provide a high reliability thin film transistor using an oxide semiconductor layer which has stable electric characteristics. In the thin film transistor in which an oxide semiconductor layer is used, the amount of change in threshold voltage of the thin film transistor before and after a... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110068387 - Semiconductor device including vertical transistor and horizontal transistor and method of manufacturing the same: A semiconductor device includes a semiconductor substrate, a vertical transistor, a horizontal transistor, a lead, wire-bonding pads, and penetrating electrodes. The semiconductor substrate has first and second surfaces and includes a first surface portion adjacent to the first surface. The vertical transistor includes first and second electrodes on the first... Agent: Denso Corporation

20110068390 - Semiconductor device and method for manufacturing same: According to one embodiment, a semiconductor device includes a semiconductor substrate, a drain layer provided thereon, a first body layer provided thereon, source layers and a gate electrode buried in each of a plurality of trenches. The source layers are discretely arranged in a staggered pattern on a surface of... Agent: Kabushiki Kaisha Toshiba

20110068392 - Semiconductor device and method of manufacturing the same: A gate trench 13 is formed in a semiconductor substrate 10. The gate trench 13 is provided with a gate electrode 16 formed over a gate insulating film 14. A portion of the gate electrode 16 protrudes from the semiconductor substrate 10, and a sidewall 24 is formed over a... Agent: Renesas Electronics Corporation

20110068391 - Semiconductor device and process for producing the same: A trench gate transistor whose gate changes depth intermittently in the gate width direction, has a first offset region and a second offset region formed below the source and drain, respectively. The first offset region and the second offset region are shallower where they contact the device isolation film than... Agent: Renesas Electronics Corporation

20110068389 - Trench mosfet with high cell density: A trench MOSFET with high cell density is disclosed where there is a heavily doped contact region on the top surface of mesas between a pair of gate trenches. The present invention can prevent the degradation of avalanche capability when shrinking the device in prior art.... Agent: Force Mos Technology Co. Ltd.

20110068393 - Semiconductor device and method for fabricating the same: A semiconductor device includes a substrate having a recess in an area where a gate is to be formed, spacers formed over sidewalls of the recess, and a first gate electrode filling in the recess. The spacers include material having the first work function or insulation material. The first gate... Agent: Hynix Semiconductor Inc.

20110068394 - Semiconductor device: A trench gate transistor whose gate changes the depth thereof intermittently in the gate width direction, has a first offset region and a second offset region formed below the source and drain, respectively. The sum of length measurements of the underlying portion of the second offset region measured from the... Agent: Renesas Electronics Corporation

20110068395 - Super-self-aligned trench-dmos structure and method: A semiconductor device includes a P-body layer formed in an N-epitaxial layer; a gate electrode formed in a trench in the P-body and N-epitaxial layer; a top source region formed from the P-body layer next to the gate electrode; a gate insulator disposed along a sidewall of the gate electrode... Agent: Alpha And Omega Semiconductor Incorporated

20110068396 - Method and structure for forming high-perfomance fets with embedded stressors: A high-performance semiconductor structure and a method of fabricating such a structure are provided. The semiconductor structure includes at least one gate stack, e.g., FET, located on an upper surface of a semiconductor substrate. The structure further includes a first epitaxy semiconductor material that induces a strain upon a channel... Agent: International Business Machines Corporation

20110068397 - Power devices and associated methods of manufacturing: Power devices and associated methods of manufacturing are disclosed herein. In one embodiment, a power device includes a drain at a first end, a source and a gate at a second end, and a drift region between the drain at the first end and the source at the second end.... Agent:

20110068399 - Integrated circuit device with series-connected field effect transistors and integrated voltage equalization and method of forming the device: Disclosed is an integrated circuit device having series-connected planar or non-planar field effect transistors (FETs) with integrated voltage equalization and a method of forming the device. The series-connected FETs comprise gates positioned along a semiconductor body to define the channel regions for the series-connected FETs. Source/drain regions are located within... Agent: International Business Machines Corporation

20110068400 - Methods and apparatus for sram bit cell with low standby current, low supply voltage and high speed: Circuits and methods for providing an SRAM or CAM bit cell. In one embodiment, a bit cell portion with thicker gate oxides in the storage cell transistors, and thinner gate oxides in a read port section having transistors are disclosed. The use of the thick gate oxides in the storage... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110068401 - Semiconductor device and method of manufacturing the same: A semiconductor device of an embodiment includes a substrate and a plurality of fins formed on the substrate. The plurality of fins is arranged so that a first distance and a second distance narrower than the first distance are repeated. In addition, the plurality of fins include a semiconductor region... Agent: Kabushiki Kaisha Toshiba

20110068403 - Strained nmos transistor featuring deep carbon doped regions and raised donor doped source and drain: Some embodiments of the present invention include providing carbon doped regions and raised source/drain regions to provide tensile stress in NMOS transistor channels.... Agent:

20110068402 - Thin film transistor and method for producing thin film transistor: A metallic wiring film, which is not exfoliated even when exposed to a plasma of hydrogen, is provided. A metallic wiring film 20a is constituted by an adhesion layer 51 in which an additive metal is added to copper and a low-resistance metallic layer 52, which is made of pure... Agent: Ulvac, Inc.,

20110068398 - Trench-generated transistor structures, fabrication methods, device structures, and design structures: Trench-generated transistor structures, methods for fabricating transistors using a trench defined in a semiconductor-on-insulator (SOI) wafer, design structures for a trench-generated transistor, and other trench-generated device structures. The source and drain of the transistor are defined by doped regions in the semiconductor material of the handle substrate of the SOI... Agent: International Business Machines Corporation

20110068405 - Fin field effect transistor: An exemplary structure for the fin field effect transistor comprises a substrate comprising a major surface; a plurality of fin structures protruding from the major surface of the substrate, wherein each fin structure comprises an upper portion and a lower portion separated at a transition location at where the sidewall... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110068404 - Semiconductor device and method for manufacturing the same: A semiconductor device includes a first semiconductor layer and a second semiconductor layer that have a form of fins and are arranged a predetermined distance apart from each other, in which a center portion of each serves as a channel region, and side portions sandwiching the center portion serve as... Agent: Kabushiki Kaisha Toshiba

20110068406 - Semiconductor device: According to one embodiment, a semiconductor device includes a semiconductor layer of a first conductivity type, a first source portion, a second source portion, a drain portion, a first main electrode, a second main electrode, and a gate electrode. The first source portion includes a first source contact region of... Agent: Kabushiki Kaisha Toshiba

20110068407 - Germanium finfets with metal gates and stressors: An integrated circuit structure includes an n-type fin field effect transistor (FinFET) and a p-type FinFET. The n-type FinFET includes a first germanium fin over a substrate; a first gate dielectric on a top surface and sidewalls of the first germanium fin; and a first gate electrode on the first... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110068408 - Strained-silicon cmos transistor: A strained-silicon CMOS transistor includes: a semiconductor substrate having a first active region, a second active region, and an isolation structure disposed between the first active region and the second active region; a first transistor, disposed on the first active region; a second transistor, disposed on the second active region;... Agent:

20110068409 - Resistive memory devices including vertical transistor arrays and related fabrication methods: A resistive memory device includes a vertical transistor and a variable resistance layer. The vertical transistor includes a gate electrode on a surface of a substrate, a gate insulation layer extending along a sidewall of the gate electrode, and a single crystalline silicon layer on the surface of the substrate... Agent: Samsung Electronics Co., Ltd.

20110068410 - Silicon die floorplan with application to high-voltage field effect transistors: A floorplan for a die having three high-voltage transistors for power applications is described. The three high-voltage transistors are specifically placed in relation to each other to optimize operation.... Agent:

20110068411 - Block contact plugs for mos devices: An integrated circuit structure includes a semiconductor substrate; a gate stack overlying the semiconductor substrate; a gate spacer on a sidewall of the gate stack; a first contact plug having an inner edge contacting a sidewall of the gate spacer, and a top surface level with a top surface of... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110068412 - Semiconductor device and method of manufacturing the same: By covering ends of a field insulating film in a region where a MOS transistor having a relatively thin gate insulating film is formed with a relatively thick gate insulating film, a channel region of the MOS transistor having the relatively thin gate insulating film is set apart from an... Agent:

20110068413 - Embedded sram memory for low power applications: Circuits and methods for providing a dual gate oxide (DGO) embedded SRAM with additional logic portions, where the logic and the embedded SRAM have NMOS transistors having a common gate dielectric thickness but have different lightly doped drain (LDD) implantations formed using different LDD masks to provide optimum transistor operation.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110068414 - Integrated circuit device with series-connected fin-type field effect transistors and integrated voltage equalization and method of forming the device: Disclosed is an integrated circuit device having stacked fin-type field effect transistors (FINFETs) with integrated voltage equalization and a method. A multi-layer fin includes a semiconductor layer, an insulator layer above the semiconductor layer and a high resistance conductor layer above the insulator layer. For each FINFET, a gate is... Agent: International Business Machines Corporation

20110068415 - Radio frequency device and method for fabricating the same: A radio frequency (RF) device that can achieve high frequency response while maintaining high output impedance and high breakdown voltage includes a substrate, a gate, at least a dummy gate, at least a doped region, a source region and a drain region. The substrate includes a well of first type... Agent:

20110068417 - Gate insulating material, gate insulating film and organic field-effect transistor: wherein R3 represents an alkyl group or a cycloalkyl group having one or more epoxy groups in a part of a chain and in the case where a plurality of R3s are present, R3s may be the same or different, R4 represents hydrogen, an alkyl group, a cycloalkyl group, a... Agent: Toray Industries, Inc.

20110068416 - Semiconductor device and method for manufacturing the same: A semiconductor device and a method for manufacturing the same substantially prevent the degradation of the reliability and characteristics due to hot carriers by using a high-k dielectric material as a gate sidewall spacer material of a gate structure.... Agent: Hynix Semiconductor Inc.

20110068418 - Substrate symmetrical silicide source/drain surrounding gate transistor: Field effect transistors described herein include first and second terminals vertically separated by a channel region. The first and second terminals comprise first and second silicide elements respectively. The first silicide element prevents the migration of carriers from the first terminal into the underlying semiconductor body or adjacent devices which... Agent: Macronix International Co., Ltd.

20110068419 - Micromechanical system: A micromechanical system includes a substrate, a first conductive layer situated above the substrate and a second conductive layer situated above the first conductive layer. The first conductive layer and the second conductive layer are conductively interconnected by a connecting element. The connecting element has a conductive edge surrounding a... Agent:

20110068420 - Semiconductor structure with lamella defined by singulation trench: A method for fabricating a semiconductor structure includes etching a first opening into a substrate; etching a chip singulation trench into the substrate to define a lamella between the first opening and the chip singulation trench; fabricating a sense element for sensing a deflection of the lamella; and singulating the... Agent: Infineon Technologies Ag

20110068421 - Integrated mems and esd protection devices: An electronic apparatus is provided that has a core, an electronic circuit in the core and a lid. An ESD protection device is in the lid. The ESD protection device is coupled to the electronic circuit.... Agent:

20110068422 - Mems coupler and method to form the same: A MEMS coupler and a method to form a MEMS structure having such a coupler are described. In an embodiment, a MEMS structure comprises a member and a substrate. A coupler extends through a portion of the member and connects the member with the substrate. The member is comprised of... Agent: Silicon Labs Sc. Inc.

20110068425 - Optical device having light sensor employing horizontal electrical field: The device includes an optical waveguide on a base. The waveguide is configured to guide a light signal through a light-transmitting medium. A light sensor is also positioned on the base. The light sensor including a ridge extending from slab regions. The slab regions are positioned on opposing sides of... Agent:

20110068423 - Photodetector with wavelength discrimination, and method for forming the same and design structure: The disclosure relates generally to photodetectors and methods of forming the same, and more particularly to optical photodetectors. The photodetector includes a waveguide having a radius that controls the specific wavelength or specific range of wavelengths being detected. The disclosure also relates to a design structure of the aforementioned.... Agent: International Business Machines Corporation

20110068426 - Photodiodes and methods for fabricating photodiodes: A photodiode includes an opening over an active photodiode region so that a top passivation layer and interlayer dielectric layers (ILDs) do not affect the spectral response of the photodiode. A dielectric reflective optical coating filter, which includes a plurality of dielectric layers, fills at least a portion of the... Agent: Intersil Americas Inc.

20110068424 - Thick bond pad for chip with cavity package: Disclosed herein an image sensor chip, including a substrate having at least one via extending through at least one inter layer dielectric (ILD); a first conductive layer over the ILD, wherein the first conductive layer has a first thickness; a second conductive layer over the first conductive layer, wherein the... Agent: International Business Machines Corporation

20110068427 - Stackable wafer level package and fabricating method thereof: A stackable wafer level package and a fabricating method thereof are disclosed. In the stackable wafer level package, bond pads (or redistribution layers) are arranged on a bottom semiconductor die, and metal pillars are formed on some of the bond pads positioned around the edges of the bottom semiconductor die.... Agent: Amkor Techonology Korea, Inc.

20110068428 - Semiconductor photodetector and method for manufacturing the same: In order to improve reliability by preventing an edge breakdown in a semiconductor photodetector having a mesa structure such as a mesa APD, the semiconductor photodetector comprises a mesa structure formed on a first semiconductor layer of the first conduction type formed on a semiconductor substrate, the mesa structure including... Agent: Fujitsu Limited,

20110068429 - Image sensor with contact dummy pixels: An image sensor array includes a substrate layer, a metal layer, an epitaxial layer, a plurality of imaging pixels, and a contact dummy pixel. The metal layer is disposed above the substrate layer. The epitaxial layer is disposed between the substrate layer and the metal layer. The imaging pixels are... Agent: Omnivision Technologies, Inc.

20110068430 - Image sensor with inter-pixel isolation: An image sensor with a plurality of photodiodes arranged in an array. A barrier region is disposed between adjacent photodiodes and inhibits depletion region merger between adjacent photodiodes, thereby inhibiting a capacitive coupling between the adjacent photodiodes.... Agent:

20110068431 - Semiconductor structures and methods for forming isolation between fin structures of finfet devices: Semiconductor structures and methods for forming isolation between fin structures formed from a bulk silicon wafer are provided. A bulk silicon wafer is provided having one or more fin structures formed therefrom. Forming of the fin structures defines isolation trenches between the one or more fin structures. Each of the... Agent: Globalfoundries Inc.

20110068432 - Fuse structure for high integrated semiconductor device: A semiconductor device comprises a fuse having a blowing region at a center part for selectively connecting different two terminals; and a dummy contact positioned under the blowing region for forming empty space by being removed together with the blowing region in a blowing process.... Agent: Hynix Semiconductor Inc.

20110068433 - Forming radio frequency integrated circuits: Method of forming a radio frequency integrated circuit (RFIC) is provided. The RFIC comprises one or more electronic devices formed in a semiconductor substrate and one or more passive devices on a dielectric substrate, arranged in a stacking manner. Electrical shield structure is formed in between to shield electronic devices... Agent: Qualcomm Incorporated

20110068434 - Nitride semiconductor substrate, semiconductor device, and methods for manufacturing nitride semiconductor substrate and semiconductor device: A nitride semiconductor substrate having a main surface serving as a semipolar plane and provided with a chamfered portion capable of effectively preventing cracking and chipping, a semiconductor device fabricated using the nitride semiconductor substrate, and a method for manufacturing the nitride semiconductor substrate and the semiconductor device are provided.... Agent: Sumitomo Electric Industries, Ltd.

20110068436 - Methods and structures for enhancing perimeter-to-surface area homogeneity: Methods and structures for enhancing the homogeneity in a ratio of perimeter to surface area among heterogeneous features in different substrate regions. At least one shape on the substrate includes an added edge effective to reduce a difference in the perimeter-to-surface area ratio between the features in a first substrate... Agent: International Business Machines Corporation

20110068435 - Semiconductor chip with crack deflection structure: Various die crack deflection structures and methods of making the same are disclosed. In one aspect, a method of manufacturing is provided that includes fabricating a semiconductor chip including an outer edge, a first side and a second side opposite to the first side. A deflection structure is fabricated in... Agent:

20110068438 - Semiconductor device: In inlets used for ID tags and the like, a defective connection between an integrated circuit part and an antenna is suppressed by improvement of tolerance for a bending or a pressing pressure. The integrated circuit part includes a semiconductor chip and a multilayer substrate having a concave portion. The... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110068437 - Semiconductor element having a conductive via and method for making the same and package having a semiconductor element with a conductive via: The present invention relates to a semiconductor element having a conductive via and a method for making the same and a package having a semiconductor element with a conductive via. The semiconductor element includes a silicon chip and at least one conductive via. The silicon chip includes a silicon substrate... Agent:

20110068439 - Double trench rectifier: A high power density or low forward voltage rectifier which utilizes at least one trench in both the anode and cathode. The trenches are formed in opposing surfaces of the substrate, to increase the junction surface area per unit surface area of the semiconductor die. This structure allows for increased... Agent: Vishay General Semiconductor, LLC.

20110068440 - Multi-angle rotation for ion implantation of trenches in superjunction devices: A method of manufacturing a semiconductor device includes providing a semiconductor wafer and forming at least one first trench in the wafer having first and second sidewalls and a first orientation on the wafer. The first sidewall of the at least one first trench is implanted with a dopant of... Agent: Icemos Technology Ltd.

20110068441 - Screened electrical device and a process for manufacturing the same: A protected electrical device having at least one electrical sub-assembly (1) to be protected comprises on at least one (11) of upper and lower surfaces (11, 12), at least a screening layer (2) against the electromagnetic (EM) and radiofrequency (RF) fields emitted by the electrical sub-assembly (1). The screening layer... Agent:

20110068442 - Resin-sealed semiconductor device and method of manufacturing the same: In a resin-sealed semiconductor device, an inner lead including a bend portion formed by lifting has a protruding shape located on one side and an inclined vertical surface shape located on the other side (inside) in an external connection terminal direction. A cutaway portion is provided along the bend portion... Agent:

20110068443 - Thermally improved semiconductor qfn/son package: A semiconductor device without cantilevered leads uses conductive wires (120) to connect the chip terminals to the leads (110), and a package compound (140) to encapsulate the chip surface (101a) with the terminals, the wires, and the lead surfaces with the attached wires. The chip surface (101b) opposite the terminals... Agent: Texas Instruments Incorporated

20110068444 - Semiconductor device and method of forming open cavity in tsv interposer to contain semiconductor die in wlcsmp: A semiconductor device is made by mounting a semiconductor wafer to a temporary carrier. A plurality of TSV is formed through the wafer. A cavity is formed partially through the wafer. A first semiconductor die is mounted to a second semiconductor die. The first and second die are mounted to... Agent: Stats Chippac, Ltd.

20110068445 - Chip package and process thereof: A chip package and a process thereof are provided. The chip package includes a lead frame, a heat sink, a chip and a molding compound. The lead frame includes a chip pad and a plurality of leads, wherein the chip pad has a first surface and a second surface opposite... Agent: Novatek Microelectronics Corp.

20110068448 - Integrated circuit packaging system with cap layer and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: attaching a semiconductor die to a die pad of a leadframe; forming a cap layer on top of the semiconductor die for acting as a ground plane or a power plane; and connecting the semiconductor die to the cap... Agent:

20110068447 - Integrated circuit packaging system with circuitry stacking and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: forming a lead to include a first tip at one end, a second tip on the end opposite from the first tip with a connect area between each end located above the first tip, and a first tier section... Agent:

20110068451 - Multi-chip semiconductor connector: In one exemplary embodiment, a multi-chip connector is formed to have a first conductive strip that is suitable for attaching to a first semiconductor die and a second conductive strip that is attached suitable for attaching to a second semiconductor die.... Agent:

20110068446 - Semiconductor chip attach configuration having improved thermal characteristics: A semiconductor chip 101 with surface 101b free of circuitry assembled on a metal carrier 102 by an attachment layer 103 with thickness 103a. Included in layer 103 are metal bodies 104 and an adhesive polymeric compound 105 between bodies 104. Metal bodies 104 form metal inter-diffusions with carrier 102... Agent: Texas Instruments Incorporated

20110068450 - Semiconductor device and manufacturing method of the same: A semiconductor device of a multi-pin structure using a lead frame is provided. The semiconductor device comprises a tab having a chip supporting surface, the chip supporting surface whose dimension is smaller than a back surface of a semiconductor chip, a plurality of leads arranged around the tab, the semiconductor... Agent: Renesas Electronics Corporation

20110068449 - Semiconductor package and method of manufacturing the semiconductor package: A semiconductor package includes a first semiconductor chip, a second semiconductor chip, a stepped pad, a plurality of first bonding wires and a second bonding wire. The first semiconductor chip is stacked on a substrate having a plurality of bonding pads, the first semiconductor chip having a plurality of first... Agent:

20110068452 - Low cost die placement: Exemplary embodiments provide methods and systems for assembling electronic devices, such as integrated circuit (IC) chips, using a release member having a phase change material. Specifically, IC elements/components can be selectively received, stored, inspected, repaired, and/or released in a scalable manner during the assembly of IC chips by inducing phase... Agent:

20110068453 - Integrated circuit packaging system with encapsulated via and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing a substrate; mounting an integrated circuit over the substrate; attaching a buffer interconnect to and over the substrate; forming an encapsulation over the substrate covering the buffer interconnect and the integrated circuit; and forming a via in the... Agent:

20110068454 - Microelectronic die packages with metal leads, including metal leads for stacked die packages, and associated systems and methods: Microelectronic die packages, stacked systems of die packages, and methods of manufacturing them are disclosed herein. In one embodiment, a system of stacked packages includes a first die package having a bottom side, a first dielectric casing, and first metal leads; a second die package having a top side attached... Agent: Micron Technology, Inc.

20110068456 - Layered chip package and method of manufacturing same: A layered chip package includes a plurality of layer portions that are stacked, each of the layer portions including a semiconductor chip. The plurality of layer portions include at least one first-type layer portion and at least one second-type layer portion. The semiconductor chip has a circuit, a plurality of... Agent: Sae Magnetics (h.k.) Ltd.

20110068455 - Packaging structure and method for manufacturing the same: This invention relates to a packaging structure and method for manufacturing the packaging structure. The packaging structure comprises a substrate film, a plurality of chips, a compound resin layer and a support layer. The substrate film is formed with circuits having a plurality of terminals exposed from a solder mask.... Agent:

20110068457 - Semiconductor package with adhesive material pre-printed on the lead frame and chip, and its manufacturing method: This invention discloses a semiconductor package with adhesive material pre-printed on the lead frame and chip, and the manufacturing method. The adhesive material is applied onto the chip carrier and the pin of the lead frame and also on the front electrode of the semiconductor chip via pre-printing. The back... Agent:

20110068458 - Integrated circuit packaging system with a leaded package and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing a first device having a first exposed side and a first inward side; connecting a second device having a second exposed side and a second inward side facing the first inward side to the first device, the second... Agent:

20110068460 - Integration of smd components in an ic housing: The invention relates to an electronic component having a semiconductor component, particularly a semiconductor chip, and at least one SMD component, a chip carrier with a support platform and with connecting leads. Whereby the semiconductor component, which is connected electrically via chip bonds to bond fingers of the connecting leads... Agent:

20110068459 - Semiconductor device and method of forming interposer with opening to contain semiconductor die: A semiconductor device has an interposer mounted over a carrier. The interposer includes TSV formed either prior to or after mounting to the carrier. An opening is formed in the interposer. The interposer can have two-level stepped portions with a first vertical conduction path through a first stepped portion and... Agent: Stats Chippac, Ltd.

20110068461 - Embedded die package and process flow using a pre-molded carrier: An embedded die package includes a carrier with an electrical device in the cavity of the carrier, a first dielectric layer covering the sides and top of the electrical device except for vias over selected bonding pads of the electrical device, a plurality of metal conductors, each of which is... Agent: Fairchild Semiconductor Corporation

20110068462 - Semiconductor chip packages having reduced stress: A structure. The structure includes (i) a carrier substrate which includes substrate pads, (ii) a chip physically attached to the carrier substrate, and (iii) a first frame physically attached to the carrier substrate. A CTE (coefficient of thermal expansion) of the first frame is substantially lower than a CTE of... Agent: International Business Machines Corporation

20110068463 - Integrated circuit packaging system with quad flat no-lead package and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing a base array having terminals and an open region; attaching a coverlay layer directly on the base array; placing a component in the open region and directly on the coverlay layer; forming an encapsulation over the base array... Agent:

20110068464 - Integrated circuit packaging system with package-on-package and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing a base substrate; attaching a component over the base substrate; attaching a component interconnect to the base substrate and a perimeter of the component; mounting a stack device over the component; attaching a base exposed interconnect directly on... Agent:

20110068467 - Semiconductor device and method of manufacturing same: A semiconductor device includes the semiconductor chip connected in a flip-chip style to the substrate, and the underfill resin formed between the substrate and the semiconductor chip and including a filet, wherein the underfill resin includes a first resin layer and a second resin layer superposed on each other in... Agent: Renesas Electronics Corporation

20110068468 - Semiconductor package with semiconductor core structure and method of forming the same: A semiconductor device includes an IPD structure, a first semiconductor die mounted to the IPD structure with a flipchip interconnect, and a plurality of first conductive posts that are disposed adjacent to the first semiconductor die. The semiconductor device further includes a first molding compound that is disposed over the... Agent: Stats Chippac, Ltd.

20110068465 - Strong interconnection post geometry: A flip-chip packaging assembly and integrated circuit device are disclosed. An exemplary flip-chip packaging assembly includes a first substrate; a second substrate; and joint structures disposed between the first substrate and the second substrate. Each joint structure comprises an interconnect post between the first substrate and the second substrate and... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110068466 - Wafer backside interconnect structure connected to tsvs: An integrated circuit structure includes a semiconductor substrate having a front surface and a back surface; a conductive via passing through the semiconductor substrate; and a metal feature on the back surface of the semiconductor substrate. The metal feature includes a metal pad overlying and contacting the conductive via, and... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110068469 - Semiconductor package with pre-formed ball bonds: A semiconductor package includes an integrated circuit die having first and second sets of connection pads, bond wires, and a substrate with connection pads. The bond wires electrically connect the second set of connection pads of the die with the substrate connection pads. Prior to connecting the wires to the... Agent: Freescale Semiconductor, Inc

20110068470 - Apparatus for making interconnect seed layers and products: An apparatus for depositing seed layers over a substrate, which substrate includes a patterned insulating layer with at least one opening surrounded by a field, and which opening has sidewalls, bottom surfaces and top corners, includes: a CVD chamber adapted to deposit one or more CVD seed layers over the... Agent:

20110068472 - Semiconductor device: A trench is formed in an insulation film formed on top of a semiconductor substrate, and a barrier metal film is formed on the surface of the trench. After a copper or copper alloy film is formed on the barrier metal film, an oxygen absorption film in which a standard... Agent: Nec Corporation

20110068471 - Semiconductor device and method of manufacturing semiconductor device: The method of manufacturing a semiconductor device includes forming an insulating film of a silicon compound-group insulation film; forming an opening in the insulation film, applying an active energy beam in an atmosphere containing hydrocarbon gas to form a barrier layer of a crystalline SiC, and forming an interconnection structure... Agent: Fujitsu Limited

20110068473 - Lead pin for package substrate: There is provided a lead pin for a package substrate including: a connection pin being inserted into a hole formed in an external substrate; a head part formed on one end of the connection pin; and a barrier part formed on one surface of the head part in order to... Agent: Samsung Electro-mechanics Co., Ltd.

20110068474 - Semiconductor device having metal lines with slits: A semiconductor device including a semiconductor substrate, an integrated circuit on the semiconductor substrate, an insulation layer covering the integrated circuit, and a plurality of metal line patterns on the insulation layer. First and second adjacent metal line patterns of the plurality of metal line patterns are spaced apart from... Agent: Mosaid Technologies Incorporated

20110068478 - Integrated circuit packaging system with package stacking and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: forming an encapsulation surrounding an integrated circuit having an inactive side and an active side exposed; forming a hole through the encapsulation with the hole not exposing the integrated circuit; forming a through conductor in the hole; and mounting... Agent:

20110068476 - Semiconductor device and manufacturing method thereof: According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate having first and second main surfaces, and a through hole passing through between the first and second main surfaces, a pad on the first main surface, a through electrode in... Agent:

20110068475 - Semiconductor device with low resistance back-side coupling: Electronic elements (40) with very low resistance back-side coupling are provided by forming one or more narrow trenches or pipes (411), preferably dielectric lined, in front sides (523) of substrates (52′), filling the trenches or pipes with a conductor (54) having a coefficient of expansion not too different from that... Agent: Freescale Semiconductor, Inc.

20110068477 - Through substrate via including variable sidewall profile: A microelectronic structure, such as a semiconductor structure, and a method for fabricating the microelectronic structure, include an aperture within a substrate. Into the aperture is located and formed a via. The via may include a through substrate via. The aperture includes, progressing sequentially contiguously at least partially through the... Agent: International Business Machines Corporation

20110068479 - Assembly of multi-chip modules using sacrificial features: A multi-chip module (MCM) is described. This MCM includes two substrates, having facing surfaces, which are mechanically coupled. Disposed on a surface of a first of these substrates, there is a negative feature, which is recessed below this surface. A positive feature in the MCM, which includes an assembly material... Agent: Sun Microsystems, Inc.

20110068481 - Package-on-package type semiconductor package and method for fabricating the same: Provided are a semiconductor package and a method for fabricating the same. The semiconductor package includes a lower package comprising a lower substrate, a lower semiconductor chip mounted on the lower substrate and comprising a redistribution, and a molding layer molding the lower semiconductor chip, an upper package comprising an... Agent:

20110068480 - Semiconductor device and adhesive sheet: The present invention provides a semiconductor device which comprises a substrate, a first semiconductor chip on a substrate, a second semiconductor chip on the first semiconductor chip, and an adhesive sheet between the first and second semiconductor chips. The second semiconductor chip has a mirrored back surface, and the adhesive... Agent:

20110068483 - Method of manufacturing a semiconductor device and semiconductor device: A method of manufacturing a semiconductor device of the present invention includes a coating process in which a pasty thermosetting resin composition having a flux activity is coated on at least either one of a substrate and a semiconductor chip; a bonding process in which the substrate and the semiconductor... Agent: Sumitomo Bakelite Co. Ltd

20110068482 - Semiconductor chip and semiconductor device: A semiconductor chip includes a plurality of electrode terminals having a fixed terminal which is supplied with a signal, an outside terminal for the signal being fixed when the semiconductor chip is mounted in both a face-up configuration and a face-down configuration on a package substrate that has the outside... Agent: Renesas Electronics Corporation

20110068484 - Device and manufacturing method: A description is given of a device, including a semiconductor chip, a first metal layer laterally extending over the semiconductor chip, the first metal layer having a first thickness. A dielectric layer laterally extends over the first metal layer, and a second metal layer laterally extends over the dielectric layer,... Agent: Infineon Technologies Ag

20110068485 - Component and method for producing a component: A component and a method for producing a component are disclosed. The component comprises an integrated circuit, a housing body, a wiring device overlapping the integrated circuit and the housing body, and one or more external contact devices in communication with the wiring device.... Agent:

20110062405 - Information recording and reproducing device: According to one embodiment, an information recording and reproducing device includes a first layer, a second layer, and a recording layer between the first and second layers, which is capable of a transition between a first state of a low resistance and a second state of a high resistance by... Agent:

20110062406 - Memory devices and formation methods: A method includes forming an electrical insulator material over an integrated circuit having a metal-containing conductive interconnect and activating a dopant in a semiconductor material of a substrate to provide a doped region. The doped region provides a junction of opposite conductivity types. After activating the dopant, the substrate is... Agent: Micron Technology, Inc.

20110062407 - Information recording and reproducing device: According to one embodiment, an information recording and reproducing device includes a recording layer which includes a typical element and a transition element, and stores a state of a first electric resistivity and a state of a second electric resistivity different from the first electric resistivity by a movement of... Agent:

20110062408 - Programmable metallization cell structure including an integrated diode, device including the structure, and method of forming same: A microelectronic programmable structure suitable for storing information and array including the structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying energy to the structure,... Agent:

20110062409 - Phase change memory structure with multiple resistance states and methods of programming and sensing: A phase change memory structure with multiple resistance states and methods of forming, programming, and sensing the same. The memory structure includes two or more phrase change elements provided between electrodes. Each phase change element has a respective resistance curve as a function of programming voltage which is shifted relative... Agent:

20110062410 - Method for morphological control and encapsulation of materials for electronics and energy applications: An electronic device comprises a drawn glass tube having opposing ends, a semiconductive material disposed inside of the drawn glass tube, and a first electrode and a second electrode disposed at the opposing ends of the drawn glass tube. A method of making an electrical device comprises disposing a semiconductive... Agent:

20110062411 - Mosfet with a nanowire channel and fully silicided (fusi) wrapped around gate: Nanowire-channel metal oxide semiconductor field effect transistors (MOSFETs) and techniques for the fabrication thereof are provided. In one aspect, a MOSFET includes a nanowire channel; a fully silicided gate surrounding the nanowire channel; and a raised source and drain connected by the nanowire channel. A method of fabricating a MOSFET... Agent: International Business Machines Corporation

20110062414 - Light emitting devices: A new light emitting device is disclosed, including a polarizing surface layer, a light emitting layer which emits light at a wavelength, and a light transformation layer disposed between the light emitting layer and the reflective layer, wherein the light emitting layer is disposed between the reflective layer and the... Agent: Industrial Technology Research Institute

20110062413 - Light-emitting diode and method for fabrication thereof: A light-emitting diode includes a substrate, a compound semiconductor layer including a p-n junction-type light-emitting part formed on the substrate, an electric conductor disposed on the compound semiconductor layer and formed of an electrically conductive material optically transparent to the light emitted from the light-emitting part and a high resistance... Agent: Showa Denko K.k.

20110062412 - Light-emitting element and a production method therefor: A light emitting element according to an exemplary embodiment includes: a support substrate; a second electrode layer formed on the support substrate; a current spreading layer formed on the support substrate; a second conductive semiconductor layer formed on the second electrode layer and the current spreading layer; an active layer... Agent: Lg Innotek Co., Ltd

20110062415 - Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations: An epitaxial structure for a III-Nitride based optical device, comprising an active layer with anisotropic strain on an underlying layer, where a lattice constant and strain in the underlying layer are partially or fully relaxed in at least one direction due to a presence of misfit dislocations, so that the... Agent: The Regents Of The University Of California

20110062416 - Nanowire-based photodiode: A nanowire-based photodiode and an interdigital p-i-n photodiode use an i-type semiconductor nanowire in an i-region of the photodiode. The nanowire-based photodiode includes a first sidewall of a first semiconductor doped with a p-type dopant, a second sidewall of the first semiconductor doped with an n-type dopant, and an intrinsic... Agent:

20110062419 - Field effect transistor and method for manufacturing the same: Provided is a carbon nanotube field effect transistor manufacturing method wherein carbon nanotube field effect transistors having excellent stable electric conduction property are manufactured with excellent reproducibility. After arranging carbon nanotubes to be a channel on a substrate, the carbon nanotubes are covered with an insulating protection film. Then, a... Agent:

20110062418 - Molecular transistor driving of nanoscale actuators from differential amplifier circuits compatible with carbon nanotube sensors and transducers: A carbon nanotube electronic circuit utilizing a differential amplifier is implemented on a single carbon nanotube. Field effect transistors are formed from a first group of electrical conductors in contact with the carbon nanotube and a second group of electrical conductors insulated from, but exerting electric fields on, the carbon... Agent:

20110062417 - Semiconductor device and manufacturing method thereof: First semiconductor layers are in source/drain regions on the semiconductor substrate. A second semiconductor layer comprises first portions on the first semiconductor layers and a second portion on a channel region between the source/drain regions. Third semiconductor layers are on the first portions of the second semiconductor layer. A gate... Agent: Kabushiki Kaisha Toshiba

20110062420 - Quantum well thermoelectric module: Quantum well thermoelectric modules and a low-cost method of mass producing the modules. The devices are comprised of n-legs and p-legs, each leg being comprised of layers of quantum well material in the form of very thin alternating layers. In the n-legs the alternating layers are layers of n-type semiconductor... Agent: Hi-z Technology Inc

20110062421 - Semiconductor device and manufacturing method thereof: First semiconductor layers are in source/drain regions on the semiconductor substrate. A second semiconductor layer comprises first portions on the first semiconductor layers and a second portion in a linear form in a channel region between the source/drain regions. A gate electrode is around the second portion of the second... Agent: Kabushiki Kaisha Toshiba

20110062422 - Systems and methods for forming defects on graphitic materials and curing radiation-damaged graphitic materials: Systems and methods are disclosed herein for forming defects on graphitic materials. The methods for forming defects include applying a radiation reactive material on a graphitic material, irradiating the applied radiation reactive material to produce a reactive species, and permitting the reactive species to react with the graphitic material to... Agent: The Trustees Of Columbia University In The City Of New York

20110062423 - Tunable terahertz radiation source: Terahertz radiation source and method of producing terahertz radiation, said source comprising a junction stack, said junction stack comprising a crystalline material comprising a plurality of self-synchronized intrinsic Josephson junctions; an electrically conductive material in contact with two opposing sides of said crystalline material; and a substrate layer disposed upon... Agent: Los Alamos National Security, LLC

20110062428 - Anthracene derivative, and light-emitting element, light-emitting device, electronic device using anthracene derivative: An object is to provide a novel anthracene derivative. Another object is to provide a light-emitting element with high luminous efficiency. Yet another object is to provide a light-emitting element with a long lifetime. Still another object is to provide a light-emitting device and an electronic device having a long... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110062430 - Blue light emitting nanomaterials and synthesis thereof: Methods for the production of a blue light emitting nanomaterial are provided comprising nitriding Group 13 metals to produce nitrided Group 13 metals and doping the nitrided Group 13 metals with a dopant, particularly an M2+ dopant, such as Mg2+ or Zn2+, to produce doped nanoparticles. Blue light emitting nanocomposites... Agent:

20110062429 - Compound for organic electroluminescent device and organic electroluminescent device: Disclosed is an organic electroluminescent device (organic EL device) that is improved in the luminous efficiency, fully secured of the driving stability, and of a simple structure and also disclosed is a compound for organic EL device useful for the said device. The compound for organic EL device is, for... Agent:

20110062425 - Organic el element: An organic EL element includes an anode and a cathode, and an organic compound layer between the anode and the cathode, the organic compound layer including a light-emitting sublayer, wherein the light-emitting sublayer contains a host, a metal complex acting as a first dopant, and a metal complex acting as... Agent: Canon Kabushiki Kaisha

20110062427 - Organic light emitting display device and method of fabricating the same: An organic light emitting display device (OLED) suppressing a resonance effect and having an enhanced luminance, and a method of fabricating the same, are disclosed. One embodiment of the OLED includes: a substrate; a first electrode disposed over the substrate and having a reflective layer; an organic layer disposed over... Agent: Samsung Mobile Display Co., Ltd.

20110062424 - Polymer compositions comprising additive block copolymers: Disclosed herein are some embodiments related to a polymer composition comprising a base polymer and a block copolymer additive. Laminated constructs, methods of preparing the polymer compositions and the laminate constructs, and devices related thereto are also disclosed.... Agent: Nitto Denko Corporation

20110062426 - Substituted oligo- or polythiophenes: A process for the preparation of a substituted 2,2′-dithiophene is described, which process comprises the steps (a), (c) and optional steps (b) and (d): a reaction of a compound of the formula: with a suitable lithium organic compound, preferably Li-alkyl or Li-alkylamide; b) optional exchange of lithium against another metal... Agent: Basf Se

20110062438 - Field-effect semiconductor device: A HEMT-type field-effect semiconductor device has a main semiconductor region comprising two layers of dissimilar materials such that a two-dimensional electron gas layer is generated along the heterojunction between the two layers. A source and a drain electrode are placed in spaced positions on a major surface of the main... Agent: Sanken Electric Co., Ltd.

20110062431 - Laser annealing of metal oxide semiconductor on temperature sensitive substrate formations: A method of annealing a metal oxide on a temperature sensitive substrate formation includes the steps of providing a temperature sensitive substrate formation and forming a spacer layer on a surface of the substrate formation. A metal oxide semiconductor device is formed on the spacer layer, the device includes at... Agent:

20110062434 - Light-emitting device and manufacturing method thereof: An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110062437 - Method for growing non-polar m-plane epitaxial layer of wurtzite semiconductors on single crystal oxide substrates: The present invention relates to a method for growing a non-polar m-plane epitaxial layer on a single crystal oxide substrate, which comprises the following steps: providing a single crystal oxide with a perovskite structure; using a plane of the single crystal oxide as a substrate; and forming an m-plane epitaxial... Agent: National Chiao Tung University

20110062439 - Semiconductor device: In the present invention, a thin film transistor is formed on a plastic film substrate (1) having anisotropy of thermal shrinkage rate or coefficient of thermal expansion in in-plane directions of the substrate. A channel is formed such that the direction (7) in which the thermal shrinkage rate or the... Agent: Canon Kabushiki Kaisha

20110062441 - Semiconductor device and display apparatus: Provided is a semiconductor device including a semiconductor element including at least a semiconductor as a component characterized by including: a mechanism for irradiating the semiconductor with light having a wavelength longer than an absorption edge wavelength of the semiconductor; and a dimming mechanism, provided in a part of an... Agent: Canon Kabushiki Kaisha

20110062432 - Semiconductor device and manufacturing method thereof: An object is to realize low power consumption while manufacturing a semiconductor device including a thin film transistor whose parasitic capacitance is reduced. Part of an insulating layer covering the periphery of a gate electrode layer is formed to be thick. Specifically, a stack including a spacer insulating layer and... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110062433 - Semiconductor device and manufacturing method thereof: It is an object to provide a semiconductor device with less power consumption as a semiconductor device including a thin film transistor using an oxide semiconductor layer. It is an object to provide a semiconductor device with high reliability as a semiconductor device including a thin film transistor using an... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110062435 - Semiconductor device and method for manufacturing the same: It is an object to provide a highly reliable thin film transistor with stable electric characteristics, which includes an oxide semiconductor film. The channel length of the thin film transistor including the oxide semiconductor film is in the range of 1.5 μm to 100 μm inclusive, preferably 3 μm to... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110062436 - Transistor and display device: To provide a transistor having a favorable electric characteristics and high reliability and a display device including the transistor. The transistor is a bottom-gate transistor formed using an oxide semiconductor for a channel region. An oxide semiconductor layer subjected to dehydration or dehydrogenation through heat treatment is used as an... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110062440 - Zinc-oxide based epitaxial layers and devices: Methods of forming planar zinc-oxide based epitaxial layers, associated heterostructures, and devices are provided.... Agent: Lumenz, Inc.

20110062442 - Semiconductor device test structures and methods: Semiconductor device test structures and methods are disclosed. In a preferred embodiment, a test structure includes a feed line disposed in a first conductive material layer, and a stress line disposed in the first conductive material layer proximate the feed line yet spaced apart from the feed line. The stress... Agent:

20110062443 - Thin body semiconductor devices having improved contact resistance and methods for the fabrication thereof: Embodiments of a method for fabricating a semiconductor device are provided. In one embodiment, the method includes the step of producing a partially-completed semiconductor device including a substrate, source/drain (S/D) regions, a channel region between the S/D regions, a gate stack over the channel region, and sidewall spacers laterally adjacent... Agent: Globalfoundries Inc.

20110062445 - Display substrate and method for manufacturing the same: A method of forming a display substrate includes forming an array layer on a substrate, forming a passivation layer on the array layer, forming a photoresist pattern on the passivation layer corresponding to a gate line, a source line and a thin-film transistor of the array layer, etching the passivation... Agent: Samsung Electronics Co., Ltd.,

20110062444 - Flexible substrate and method for fabricating flexible display devicve having the same: A method for fabricating a flexible display device including the steps of preparing a glass substrate, forming a flexible substrate on the glass substrate, the flexible substrate being formed by forming a semiconductor layer on the glass substrate, forming a first flexible layer on the semiconductor layer, forming an adhesive... Agent:

20110062446 - <100> or 45 degrees-rotated <100>, semiconductor-based, large-area, flexible, electronic devices: Novel articles and methods to fabricate the same resulting in flexible, {100}<100> or 45°-rotated {100}<100> oriented, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices,... Agent:

20110062447 - Liquid crystal display device and method for manufacturing liquid crystal display device: A production method for a liquid crystal display device having a plurality of TFTs disposed respectively corresponding to a plurality of pixels, each of the plurality of pixels including a reflection section, the production method including: a step of forming on a substrate a metal layer having apertures; a step... Agent: Sharp Kabushiki Kaisha

20110062448 - Field effect semiconductor devices and methods of manufacturing field effect semiconductor devices: Field effect semiconductor devices and methods of manufacturing the same are provided, the field effect semiconductor devices include a second semiconductor layer on a first surface of a first semiconductor layer, a first and a second third semiconductor layer respectively on two sides of the second semiconductor layer, a source... Agent: Samsung Electronics Co., Ltd.

20110062449 - Technique for the growth and fabrication of semipolar (ga,al,in,b)n thin films, heterostructures, and devices: A method for growth and fabrication of semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation,... Agent: Japan Science And Technology Agency

20110062450 - Silicon carbide semiconductor device: A silicon carbide semiconductor device comprising a region of germanium and a region of crystalline or polycrystalline silicon carbide. The germanium region and the silicon carbide region are configured to form a germanium/silicon carbide heterojunction.... Agent: The University Of Warwick

20110062453 - Compound semiconductor light emitting element, illuminating apparatus using compound semiconductor light emitting element, and method for manufacturing compound semiconductor light emitting element: A compound semiconductor light emitting element is provided with a substrate which is provided on a side of one electrode; a plurality of columnar crystal structures of nanometer scale extending in a vertical direction on the substrate; and another electrode which interconnects top portions of the plurality of columnar crystal... Agent: Panasonic Electric Works Co., Ltd.

20110062451 - Light-emitting element: According to an aspect of the invention, a light-emitting element includes a shift thyristor, a light emitting thyristor, and a vertical type gate load resistor. The shift thyristor includes a first anode layer, a first gate layer, and a first cathode layer. The light-emitting thyristor includes a second anode layer,... Agent: Fuji Xerox Co., Ltd.

20110062452 - Method for producing zinc oxide-based semiconductor light-emitting device and zinc oxide-based semiconductor light-emitting device: The ohmic contact between a growth substrate and an electrode formed thereon is improved in a zinc oxide-based semiconductor light-emitting device, thereby improving the light-emission efficiency and reliability A step for forming an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer in sequence on a first principal... Agent: Stanley Electric Co., Ltd.

20110062459 - Ac light emitting diode having full-wave light emitting cell and half-wave light emitting cell: The present invention discloses an alternating current (AC) light emitting diode (LED) having half-wave light emitting cells and full-wave light emitting cells. The AC LED has a plurality of light emitting cells electrically connected between bonding pads on a single substrate. The AC LED includes a first row of half-wave... Agent: Seoul Opto Device Co., Ltd.

20110062454 - Light emitting device having remotely located light scattering material: A light emitting device with a remotely located light scattering material which improves color mixing property is provided. The light emitting device includes a substrate defining a cavity; one or more light emitting elements bonded to the substrate and positioned in the cavity; at least one first layer covering the... Agent: Hong Kong Applied Science And Technology Research Institute Co., Ltd.

20110062458 - Light emitting panel and manufacturing method of light emitting panel: Disclosed is a light emitting panel including: a light blocking section formed above a substrate, the light blocking section including an opening; a first electrode formed above the opening of the light blocking section; a dividing wall including an opening so that at least a portion of the first electrode... Agent: Casio Computer Co., Ltd.

20110062456 - Light-emitting device: This disclosure discloses a light-emitting device. The light-emitting device comprises: a substrate; and a first light-emitting unit comprising a plurality of light-emitting diodes electrically connected to each other on the substrate. A first light-emitting diode in the first light-emitting unit comprises a first semiconductor layer with a first conductivity-type, a... Agent:

20110062455 - Optoelectronic component: Provided are optoelectronic components which include an optoelectronic device and a structure for self-aligning the optoelectronic device. Also provided are optoelectronic modules and methods of forming optoelectronic components.... Agent:

20110062460 - Organic el light emitting element, manufacturing method thereof, and display device: An organic EL light emitting element is provided with a conductive transparent electrode 3, a counter electrode 8 opposing the conductive transparent electrode 3, an organic EL light emitting layer 6 provided between the conductive transparent electrode 3 and the counter electrode 8, an insulating protection layer 9 provided to... Agent: Canon Kabushiki Kaisha

20110062461 - Organic electroluminescent display device: An organic EL display device of active matrix type wherein insulated-gate field effect transistors formed on a single-crystal semiconductor substrate are overlaid with an organic EL layer; characterized in that the single-crystal semiconductor substrate (413 in FIG. 4) is held in a vacant space (414) which is defined by a... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110062457 - Semiconductor light emitting device, method of manufacturing the same, image display device, and electronic apparatus: A semiconductor light emitting device including an active layer, a compound semiconductor layer on the active layer, a contact layer on the compound semiconductor layer, and an electrode on the contact layer, where the contact layer is substantially the same size as the electrode.... Agent: Sony Corporation

20110062462 - Novel device structure: Organic light emitting devices are provided having multiple subpixels. An organic spacer layer is provided in at least one subpixel to protect the emissive layer of the at least one subpixel from overspray due to the deposition of a different emissive layer in a nearby subpixel. More generally, a first... Agent: Universal Display Corporation

20110062463 - Optical functional element, optical functional element array, exposure device, and method of manufacturing optical functional element: According to an aspect of the invention, an optical functional element includes a substrate, a semiconductor element portion, and a light emitting element portion. The semiconductor element portion includes a first part of a semiconductor multi layer structure formed on the substrate. The light emitting element portion includes a second... Agent: Fuji Xerox Co., Ltd.

20110062464 - Led arrangement: An LED arrangement (light emitting diode) has a plurality of adjacent radiating LEDs that are nearly identically aligned for forming an extended area light source. The LEDs are attached to a metallic multi-film support having sandwich-like insulating intermediate layers and having at least a step-like structure with at least one... Agent:

20110062465 - Light emitting element with a plurality of cells bonded, method of manufacturing the same, and light emitting device using the same: The present invention relates to a light emitting element with arrayed cells, a method of manufacturing the same, and a light emitting device using the same. The present invention provides a light emitting element including a light emitting cell block with a plurality of light emitting cells connected in series... Agent: Seoul Opto Device Co., Ltd.

20110062466 - Alxga(1-x)as substrate, epitaxial wafer for infrared leds, infrared led, method of manufacturing alxga(1-x)as substrate, method of manufacturing epitaxial wafer for infrared leds, and method of manufacturing infrared leds: Affords AlxGa(1-x)As (0≦x≦1) substrates epitaxial wafers for infrared LEDs, infrared LEDs, methods of manufacturing AlxGa(1-x)As substrates, methods of manufacturing epitaxial wafers for infrared LEDs, and methods of manufacturing infrared LEDs, whereby a high level of transmissivity is maintained, and through which, in the fabrication of semiconductor devices, the devices prove... Agent: Sumitomo Electric Industries, Ltd.

20110062467 - Light emitting device and manufacturing method thereof: A light emitting device according to the embodiment includes a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, a current spreading layer on the second conductive semiconductor layer, a bonding layer on the current spreading layer,... Agent: Lg Innotek Co., Ltd.

20110062471 - Led module with high index lens: An array of housings with housing bodies and lenses is molded, or an array of housing bodies is molded and bonded with lenses to form an array of housings with housing bodies and lenses. Light-emitting diodes (LEDs) are attached to the housings in the array. An array of metal pads... Agent: Philips Lumileds Lighting Company, LLC

20110062473 - Light emitting device: A light emitting device includes a light emitting element, a wire connected to the light emitting element, and a substrate supporting the light emitting element. The substrate is formed with a first recess and a second recess that are open in a common surface of the substrate. The first recess... Agent: Rohm Co., Ltd.

20110062474 - Light-emitting diode device and fabrication method thereof: A light-emitting diode device includes a frame, a light-emitting diode die, a fluorescent layer, a reflector, and a lens. The light-emitting diode die is disposed on the frame. The fluorescent layer is directly molded to cover the light-emitting diode die. The reflector is directly molded on the frame, surrounding the... Agent: Advanced Optoelectronic Technology Inc.

20110062476 - Light-extraction member, organic el element, and method for producing the organic el element: A light-extraction member for use in a light-emitting display device, the light-extraction member including a light-extracting substrate which is disposed on the light-extraction side of the light-emitting display device, a color filter layer formed over the light-extracting substrate, and a lens member formed over the color filter layer, wherein the... Agent:

20110062479 - Method of manufacturing group-iii nitride semiconductor light-emitting device, and group-iii nitride semiconductor light-emitting device, and lamp: Provided are a method of manufacturing a group-III nitride semiconductor light-emitting device in which a light-emitting device excellent in the internal quantum efficiency and the light extraction efficiency can be obtained, a group-III nitride semiconductor light-emitting device and a lamp. Included are an epitaxial step of forming a semiconductor layer... Agent: Showa Denko K.k.

20110062469 - Molded lens incorporating a window element: A light emitter includes a light-emitting device (LED) die and an optical element over the LED die. The optical element includes a lens, a window element, and a bond at an interface disposed between the lens and the window element. The window element may be a wavelength converting element or... Agent: Philips Lumileds Lighting Company, LLC

20110062475 - Organic light emitting display device: An organic light emitting display device includes a substrate and a plurality of pixels on the substrate. The pixels include a plurality of first electrodes, a second electrode, a white light emitting layer, and a first thin film layer between the first electrodes and the second electrode. White light emitted... Agent:

20110062481 - Organic light-emitting device: An organic light-emitting device cutting off ambient light while keeping emission intensity includes a pair of first and second electrodes opposed to each other; and a plurality of organic semiconductor layers layered and disposed between the first and second electrodes, wherein the organic semiconductor layers include an organic light-emitting layer,... Agent: Pioneer Corporation

20110062468 - Phosphor-converted light emitting diode device: A light emitting diode is provided which is capable of emitting a first light having a first peak wavelength. The light emitting diode is provided with a phosphor layer overlying the light emitting diode and capable of absorbing the first light and emitting a second light having a second peak... Agent: Philips Lumileds Lighting Company, LLC

20110062470 - Reduced angular emission cone illumination leds: A light emitting diode (LED) package includes a support, an LED die mounted on the support, a reflector around the LED die, and a lens over the LED die. The reflector has an angled reflective surface that limits the light emission angle from the LED package. The reflector is a... Agent: Philips Lumileds Lighting Company, LLC

20110062480 - Semi-conductor light-emitting device: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, a second electrode layer under the second conductive semiconductor layer; and an insulating layer... Agent:

20110062477 - Semiconductor light emitting device: Disclosed are a semiconductor light emitting device. The semiconductor light emitting device comprises a light emitting structure comprising a plurality of compound semiconductor layers, a passivation layer at the outside of the light emitting structure, a first electrode layer on the light emitting structure, and a second electrode layer under... Agent:

20110062478 - Semiconductor light emitting devices including flexible unitary film having an optical element therein: A semiconductor light emitting device includes a substrate having a face, a flexible unitary film that includes an optical element therein on the face, and a semiconductor light emitting element between the substrate and the flexible film that is configured to emit light through the optical element. The flexible unitary... Agent: Cree, Inc.

20110062472 - Wavelength-converted semiconductor light emitting device: A light emitting diode includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region, and n- and p-contacts disposed on the n- and p-type regions. The light emitting layer is configured to emit light of a first peak wavelength. A wavelength converting... Agent: Philips Lumileds Lighting Company, LLC

20110062486 - fabrication for electroplating thick metal pads: A method of electroplating includes forming a seed region to be electroplated on a first portion of a substrate, forming a ground plane on a second portion of a substrate, electrically isolating the ground plane from the seed region, electroplating the region, wherein electroplating includes causing the ground plane and... Agent: Palo Alto Research Center Incorporated

20110062482 - Apparatus and method for enhancing connectability in led array using metal traces: A light-emitting device having multiple light-emitting diode (“LED”) dice organized in an array capable of configuring LED dice in series, parallel, and/or a combination of series and parallel via metal traces is disclosed. In one aspect, the light-emitting device includes a substrate, a dielectric layer, an LED array, and a... Agent: Bridgelux, Inc.

20110062483 - Light-emitting diode: This invention provides a light-emitting diode (LED). The LED is electrically connected with a circuit board. The LED includes a light-emitting chip, an encapsulating element, a lead, and a heat insulating element. The encapsulating element encapsulates the light-emitting chip. The lead is coupled with the light-emitting chip and the circuit... Agent:

20110062487 - Semiconductor light emitting device: The present disclosure relates to a semiconductor light emitting device, the semiconductor light emitting device comprising: a plurality of openings positioned between first electrode and second electrode, the plurality of openings defining a first opening region for suppressing current flow between the first electrode and the second electrode and a... Agent: Epivalley Co., Ltd.

20110062484 - Semiconductor light emitting device and manufacturing method thereof: A light-emitting device which includes a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type; and a light emitting layer provided between the first and second semiconductor layers, the device comprises a first electrode formed on the first semiconductor layer; a second... Agent: Stanley Electric Co., Ltd.

20110062485 - Semiconductor light-emitting element, method for manufacturing the semiconductor light-emitting element and lamp that uses the semiconductor light-emitting element: The semiconductor light-emitting element is obtained by a manufacturing method that, when manufacturing the semiconductor light-emitting element that comprises a compound semiconductor layer that includes at least a p-type semiconductor layer, and a transparent electrode that is provided on the p-type semiconductor layer, includes a step of forming a film... Agent: Sumitomo Metal Mining Co., Ltd.

20110062488 - Group iii nitride semiconductor light-emitting device: A Group III nitride semiconductor light-emitting device includes an electrically conductive support; a p-electrode provided on the support; a p-type layer, an active layer, and an n-type layer, which are formed of a Group III nitride semiconductor and are sequentially provided on the p-electrode; an n-electrode which is connected to... Agent: Toyoda Gosei Co., Ltd.

20110062490 - Mos gate power semiconductor device: A MOS-gate power semiconductor device includes: a main device area including an active area and an edge termination area; and an auxiliary device area horizontally formed outside the main device area so as to include one or more diodes. Accordingly, it is possible to protect a circuit from an overcurrent... Agent:

20110062489 - Power device with self-aligned silicide contact: An improved power device with a self-aligned suicide and a method for fabricating the device are disclosed. An example power device is a vertical power device that includes contacts formed on gate and body contact regions by an at least substantially self-aligned silicidation (e.g., salicide) process. The example device may... Agent:

20110062491 - Power semiconductor module: A power semiconductor module (1) includes a first MOS transistor (16) connected to a positive side power supply terminal via a first conductor pattern (11), a first free wheeling diode (17) connected to the positive side power supply terminal via a second conductor pattern (12), a second MOS transistor (18)... Agent: Mitsubishi Electric Corporation

20110062493 - Epitaxial substrate for semiconductor device, schottky junction structure, and leakage current suppression method for schottky junction structure: Provided is an epitaxial substrate for semiconductor device that is capable of achieving a semiconductor device having high reliability in reverse characteristics of schottky junction. An epitaxial substrate for semiconductor device obtained by forming, on a base substrate, a group of group III nitride layers by lamination such that a... Agent: Ngk Insulators, Ltd.

20110062492 - High-quality hetero-epitaxy by using nano-scale epitaxy technology: An integrated circuit structure includes a semiconductor substrate formed of a first semiconductor material; two insulators in the semiconductor substrate; and a semiconductor region between and adjoining sidewalls of the two insulators. The semiconductor region is formed of a second semiconductor material different from the first semiconductor material, and has... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110062495 - Field effect transistor with access region recharge: The current invention provides the design of the field effect transistor with lateral channel suitable for high voltage switching. In such a transistor, the electrical charge stored in the high electric field region has to vary as the transistor switches from ON to OFF state and back. The invention provides... Agent:

20110062496 - Methods and compositions for preparing ge/si semiconductor substrates: The present disclosure describes methods for preparing semiconductor structures, comprising forming a Ge layer on a semiconductor substrate using an admixture of (a) (GeH3)2CH2 and Ge2H6; (b) GeH3CH3 and Ge2H6; or (c) (GeH3)2CH2, GeH3CH3 and Ge2H6, wherein in all cases, Ge2H6 is in excess. The disclosure further provides semiconductor structures... Agent: The Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Acting For And On Behalf Of A

20110062497 - Semiconductor device structure with strain layer and method of fabricating the semiconductor device structure: A semiconductor device with a strain layer and a method of fabricating the semiconductor device with a strain layer that can reduce a loading effect are provided. By arranging active dummies and gate dummies not to overlap each other, the area of active dummy on which a strain layer dummy... Agent: Samsung Electronics Co., Ltd.

20110062494 - Structure with isotropic silicon recess profile in nanoscale dimensions: A trench is formed by an anisotropic etch in a semiconductor material layer employing a masking layer, which can be gate spacers. In one embodiment, an adsorbed fluorine layer is provided at a cryogenic temperature only on vertical sidewalls of the semiconductor structure including the sidewalls of the trench. The... Agent: International Business Machines Corporation

20110062498 - Embedded silicon germanium source drain structure with reduced silicide encroachment and contact resistance and enhanced channel mobility: Semiconductor devices with embedded silicon germanium source/drain regions are formed with enhanced channel mobility, reduced contact resistance, and reduced silicide encroachment. Embodiments include embedded silicon germanium source/drain regions with a first portion having a relatively high germanium concentration, e.g., about 25 to about 35 at. %, an overlying second portion... Agent:

20110062499 - Electronic shutter with photogenerated charge extinguishment capability for back-illuminated image sensors: An electronic image sensor includes a semiconductor substrate having a first surface configured for accepting illumination to a pixel array disposed in the substrate. An electrically-doped channel region for each pixel is disposed at a second substrate surface opposite the first substrate surface. The channel regions are for collecting photogenerated... Agent: Massachusetts Institute Of Technology

20110062500 - Semiconductor device and fabrication method thereof: A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a semiconductor substrate which comprise a first type well and a second type well, and a plurality of junction regions therebetween, wherein each of the junction regions adjoins the first and the second type wells. A... Agent: Vanguard International Semiconductor Corporation

20110062501 - Method for self-aligning a stop layer to a replacement gate for self-aligned contact integration: Semiconductor devices with replacement gate electrodes and integrated self aligned contacts are formed with enhanced gate dielectric layers and improved electrical isolation properties between the gate line and a contact. Embodiments include forming a removable gate electrode on a substrate, forming a self aligned contact stop layer over the removable... Agent: Globalfoundries Inc.

20110062502 - Semiconductor device and method for manufacturing the same: The present invention proposes a method of forming a dual contact hole, comprising steps of: forming a source/drain region and a replacement gate structure on a semiconductor substrate, the replacement gate structure including a replacement gate; depositing a first inter-layer dielectric layer; planarizing the first inter-layer dielectric layer to expose... Agent: The Institute Of Microelectronics Chinese Academy Of Science

20110062503 - Semiconductor memory device: A semiconductor memory device includes a plurality of transistors on a semiconductor substrate; a first interlayer dielectric film on the transistors; a plurality of ferroelectric capacitors on the first interlayer dielectric film; a first hydrogen barrier film covering an upper surface and a side surface of each of the ferroelectric... Agent: Kabushiki Kaisha Toshiba

20110062504 - Semiconductor memory device including ferroelectric capacitor: An aspect of the present disclosure, there is provided semiconductor memory device including a ferroelectric capacitor and a field effect transistor as a memory cell, the ferroelectric capacitor including a lower electrode connected to one of the pair of the impurity diffusion layers, a bit line formed below the lower... Agent: Kabushiki Kaisha Toshiba

20110062505 - Semiconductor device with capacitor and fuse and its manufacture: An upper electrode of a capacitor has a two-layer structure of first and second upper electrodes. A gate electrode of a MOS field effect transistor and a fuse are formed by patterning conductive layers used to form the lower electrode, first upper electrode and second upper electrode of the capacitor.... Agent: Yamaha Corporation

20110062506 - Metal oxide semiconductor field effect transistor integrating a capacitor: A bypass capacitor is directly integrated on top of a MOSFET chip. The capacitor comprises multi layers of conductive material and dielectric material staking on top of each other with connection vias through dielectric layer for connecting different conductive layers. The method of integrating the bypass capacitor comprises repeating steps... Agent:

20110062507 - Semiconductor device and a method of fabricating the same: A semiconductor device is provided. The semiconductor device includes a memory device, and the memory device includes a substrate, two stacked gates, two spacers, an insulating layer, and a dielectric layer. The stacked gates having a gap therebetween are located on the substrate. The spacers having a pipe or a... Agent: Macronix International Co., Ltd.

20110062508 - Semiconductor device including resistor and method of fabricating the same: Embodiments of a semiconductor device including a resistor and a method of fabricating the same are provided. The semiconductor device includes a mold pattern disposed on a semiconductor substrate to define a trench, a resistance pattern including a body region and first and second contact regions, wherein the body region... Agent:

20110062510 - 3d non-volatile memory device and method for fabricating the same: A non-volatile memory device having a string of a plurality of memory cells that are serially coupled, wherein the string of memory cells includes a plurality of second channels of a pillar type, a first channel coupling lower end portions of the plurality of the second channels with each other,... Agent:

20110062509 - Semiconductor device having upper layer portion of semiconductor substrate divided into a plurality of active areas: A semiconductor memory device includes: a semiconductor substrate; a plurality of element isolation insulators disposed in parts of an upper layer portion of the semiconductor substrate and dividing the upper layer portion into a plurality of active areas extended in one direction; tunnel insulating films provided on the active areas:... Agent: Kabushiki Kaisha Toshiba

20110062511 - Device having complex oxide nanodots: Devices are disclosed, such as those having a memory cell. The memory cell includes an active area formed of a semiconductor material; a first dielectric over the semiconductor material; a second dielectric comprising a material having a perovskite structure over the first dielectric; a third dielectric over the second dielectric;... Agent: Micron Technology, Inc.

20110062512 - Nonplanar device with thinned lower body portion and method of fabrication: A nonplanar semiconductor device having a semiconductor body formed on an insulating layer of a substrate. The semiconductor body has a top surface opposite a bottom surface formed on the insulating layer and a pair of laterally opposite sidewalls wherein the distance between the laterally opposite sidewalls at the top... Agent:

20110062513 - Overlapping trench gate semiconductor device and manufacturing method thereof: An overlapping trench gate semiconductor device includes a semiconductor substrate, a plurality of shallow trenches disposed on the semiconductor substrate, a first conductive layer disposed in the shallow trenches, a plurality of deep trenches respectively disposed in each shallow trench, a second conductive layer disposed in the deep trenches, a... Agent:

20110062515 - Semiconductor device: A first gate electrode surrounding the periphery of the first gate insulating film, a second gate insulating film surrounding the periphery of the first gate electrode, a first columnar silicon layer surrounding the periphery of the second gate insulating film, a first upper part high concentration semiconductor layer of the... Agent:

20110062514 - Semiconductor device and method of manufacturing the same: A first semiconductor element portion for switching a first current includes a first channel surface having a first plane orientation. A first region of a semiconductor layer includes a first trench having the first channel surface. A first gate insulating film covers the first channel surface with a first thickness.... Agent: Mitsubishi Electric Corporation

20110062516 - Semiconductor device: Provided is a LOCOS offset MOS field-effect transistor in which a first lightly-doped N-type drain offset region with a LOCOS oxide film and a second lightly-doped N-type drain offset region without a LOCOS oxide film are formed in a drain-side offset region, and both the regions are covered with a... Agent:

20110062517 - Semiconductor device and method of manufacturing the same: According to one embodiment, a semiconductor device includes: a semiconductor substrate of a first conductivity type; a source region; a drain region of a second conductivity type; a gate electrode formed via a gate insulating film on the semiconductor substrate between the source region and the drain region; and a... Agent: Kabushiki Kaisha Toshiba

20110062519 - Fabrication of semiconductors with high-k/metal gate electrodes: Semiconductor devices with high-K/metal gates are formed with spacers that are substantially resistant to subsequent etching to remove an overlying spacer, thereby avoiding replacement and increasing manufacturing throughput. Embodiments include forming a high-K/metal gate, having an upper surface and side surfaces, over a substrate, e.g., a SOI substrate, and sequentially... Agent: Globalfoundries Inc.

20110062518 - Finfets and methods of making same: A method of fabricating and a structure of a merged multi-fin finFET. The method includes forming single-crystal silicon fins from the silicon layer of an SOI substrate having a very thin buried oxide layer and merging the end regions of the fins by growing vertical epitaxial silicon from the substrate... Agent: International Business Machines Corporation

20110062520 - Method for fabricating transistor with thinned channel: A method of fabricating a MOS transistor having a thinned channel region is described. The channel region is etched following removal of a dummy gate. The source and drain regions have relatively low resistance with the process.... Agent:

20110062521 - Semiconductor device: A semiconductor device according to the present invention comprises a first transistor and a second transistor, and functions as an inverter. The first transistor includes an island semiconductor layer, a first gate insulating film surrounding the periphery of the island semiconductor layer, a gate electrode surrounding the periphery of the... Agent:

20110062522 - Semiconductor device for electrostatic discharge protection: Provided is a semiconductor device for electrostatic discharge protection capable of protecting an inner circuit from both noises of an overcurrent noise of an ESD and an overcurrent noise of a latch-up test while achieving size reduction, by sharing a guard ring formed in a periphery of an ESD protection... Agent:

20110062523 - Semiconductor memory device and production method thereof: In a static memory cell composed of four MOS transistors, the transistors composing a memory cell are formed on a substrate and have a drain, gate, and source arranged vertically with the gate surrounding a columnar semiconductor layer. In this memory cell, the first diffusion layers (second diffusion layers) functioning... Agent:

20110062524 - Gate structures of cmos device and method for manufacturing the same: Gate structures of CMOS device and the method for manufacturing the same are provided. A substrate having an NMOS region, a PMOS region, and a work function modulation layer disposed on the NMOS region and the PMOS region is provided. A nitrogen doping process is performed to dope nitrogen into... Agent:

20110062526 - Metal gate transistor, integrated circuits, systems, and fabrication methods thereof: A gate-last method for forming a metal gate transistor is provided. The method includes forming an opening within a dielectric material over a substrate. A gate dielectric structure is formed within the opening and over the substrate. A work function metallic layer is formed within the opening and over the... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110062525 - Method and structure for differential silicide and recessed or raised source/drain to improve field effect transistor: A method forms an integrated circuit structure. The method patterns a protective layer over a first-type field effect transistor and removes a stress liner from above a second-type field effect transistors. Then, the method removes a first-type silicide layer from source and drain regions of the second-type field effect transistor,... Agent: International Business Machines Corporation

20110062527 - Semiconductor apparatus and method for manufacturing same: In one embodiment, a semiconductor apparatus is disclosed. The apparatus includes: an element-isolation insulating film formed on a major surface of a semiconductor layer, the element-isolation insulating film having a first opening and a second opening; an n-type MOSFET provided in the first opening; and a p-type MOSFET provided in... Agent: Kabushiki Kaisha Toshiba

20110062528 - Semiconductor device and semiconductor device manufacturing method: A semiconductor device includes a semiconductor substrate; a gate insulation film formed on the semiconductor substrate; a silicide gate electrode of an n-type MISFET formed on the gate insulation film; and a silicide gate electrode of a p-type MISFET formed on the gate insulation film and having a thickness smaller... Agent: Kabushiki Kaisha Toshiba

20110062529 - Semiconductor memory device: In a static memory cell configured using four MOS transistors and two load resistance elements, the MOS transistors are formed on diffusion layers formed on a substrate. The diffusion layers serve as memory nodes. The drain, gate and source of the MOS transistors are arranged in the direction orthogonal to... Agent:

20110062530 - Semiconductor device and manufacturing method thereof: A semiconductor device includes: a semiconductor substrate; an interface layer formed on the semiconductor substrate; a high-k gate dielectric film formed on the interface layer; and a gate electrode formed on the high-k gate dielectric film. The high-k gate dielectric film contains La. The high-k gate dielectric film has the... Agent: Panasonic Corporation

20110062531 - sensor array and a method of manufacturing the same: A sensor array (100) for detecting particles, the sensor array (100) comprising a substrate (102) having a plurality of holes (104), a plurality of electronic sensor chips (106) each having a sensor active region (202) being sensitive to the presence of particles to be detected, and an electric contacting structure... Agent: Nxp B.v.

20110062532 - Mems chip and package method thereof: The present invention proposes a MEMS chip and a package method thereof. The package method comprises; making a capping wafer by: providing a first substrate and forming an etch stop layer on the first substrate; making a device wafer by: providing a second substrate and forming a MEMS device and... Agent: Pixart Imaging Incorporation, R.o.c.

20110062533 - Device package substrate and method of manufacturing the same: A device package substrate includes: a substrate having a cavity formed on a top surface thereof, the cavity having a chip mounting region; a first interconnection layer formed to extend to the inside of the cavity; a second interconnection layer formed to be spaced apart from the first interconnection layer;... Agent: Samsung Electro-mechanics Co., Ltd.

20110062534 - Electronic component: An electronic component includes: a first substrate having a through-hole; a second substrate opposite the first substrate; a sealing member surrounding a sealing space formed between the first substrate and the second substrate; a functional element having at least a part thereof disposed in the sealing space, and a through-electrode... Agent: Seiko Epson Corporation

20110062535 - Mems transducers: A MEMS device comprises a substrate having at least a first transducer optimized for transmitting pressure waves, and at least a second transducer optimized for detecting pressure waves. The transducers can be optimised for transmitting or receiving by varying the diameter, thickness or mass of the membrane and/or electrode of... Agent:

20110062536 - Design and fabrication methods of partial cladded write line to enhance write margin for magnetic random access memory: A cladding structure for a conductive line used to switch a free layer in a MTJ is disclosed and includes two cladding sidewalls on two sides of the conductive line, a top cladding portion on a side of the conductive line facing away from the MTJ, and a highly conductive,... Agent: Magic Technologies, Inc.

20110062538 - Magnetic element having reduced current density: A memory device includes a fixed magnetic layer, a tunnel barrier layer over the fixed magnetic layer, and a free magnetic structure formed over the tunnel barrier layer, wherein the free magnetic structure has layers or sub-layers that are weakly magnetically coupled. Thus, a low programming voltage can be used... Agent: Everspin Technologies, Inc.

20110062537 - Magnetic memory devices: A magnetic memory device may include a first vertical magnetic layer, a non-magnetic layer on the first vertical magnetic layer, and a first junction magnetic layer on the non-magnetic layer, with the non-magnetic layer being between the first vertical magnetic layer and the first junction magnetic layer. A tunnel barrier... Agent:

20110062539 - Semiconductor device and method of manufacturing the same: To provide a semiconductor device in which the deterioration of the rewrite property is suppressed. In a memory cell region, magnetoresistive elements in a semiconductor magnetic-storage device are formed in an array shape in a mode that the magnetoresistive elements are arranged at portions where digit lines extending in one... Agent: Renesas Electronics Corporation

20110062540 - Solid-state image sensor and method of manufacturing the same: According to one embodiment, a solid-state image sensor includes a semiconductor substrate including a first surface on which light enters, and a second surface opposite to the first surface, a pixel region formed in the semiconductor substrate, and including a photoelectric conversion element which converts the incident light into an... Agent:

20110062541 - High molecular extinction coefficient metal dyes: The present invention relates to novel compounds that are useful as ligands in organometallic dyes. More particularly, the invention relates to dyes comprising the compounds, said dyes being sensitizing dyes useful in solar cell technology. According to an embodiment, the present invention discloses new ruthenium dyes and their application in... Agent:

20110062543 - Semiconductor device: The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110062542 - Structures, design structures and methods of fabricating global shutter pixel sensor cells: Pixel sensor cells, method of fabricating pixel sensor cells and design structure for pixel sensor cells. The pixel sensor cells including: a photodiode body in a first region of a semiconductor layer; a floating diffusion node in a second region of the semiconductor layer, a third region of the semiconductor... Agent: International Business Machines Corporation

20110062544 - Optical semiconductor device and method for manufacturing the same: An optical semiconductor device is provided with a low concentration p-type silicon substrate (1); a low dopant concentration n-type epitaxial layer (second epitaxial layer) (26); a low dopant concentration p-type anode layer (27); a high concentration n-type cathode contact layer (9); a photodiode (2) made of the anode layer (27)... Agent: Panasonic Corporatin

20110062545 - Semiconductor device and its manufacturing method: A semiconductor device in accordance with the present invention includes a diode 7 that is formed on a semiconductor substrate and serves as a temperature detection element to detect abnormal heat generation, and a thermal conduction layer 102 that is formed between the diode 7 and the semiconductor substrate and... Agent: Renesas Electronics Corporation

20110062546 - Structure and method to minimize regrowth and work function shift in high-k gate stacks: The present invention provides a semiconductor structure comprising high-k material portions that are self-aligned with respect to the active areas in the semiconductor substrate and a method of fabricating the same. The high-k material is protected from oxidation during the fabrication of the semiconductor structure and regrowth of the high-k... Agent: Ibm Corporation

20110062547 - Semiconductor device and method for manufacturing the same: A semiconductor device which eliminates the need for high fillability through a simple process and a method for manufacturing the same. A high breakdown voltage lateral MOS transistor including a source region and a drain region is completed on a surface of a semiconductor substrate. A trench which surrounds the... Agent: Renesas Electronics Corporation

20110062548 - Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for bicmos integration: High performance bipolar transistors with raised extrinsic self-aligned base are integrated into a BiCMOS structure containing CMOS devices. By forming pad layers and raising the height of an intrinsic base layer relative to the source and drain of preexisting CMOS devices and by forming an extrinsic base through selective epitaxy,... Agent: International Business Machines Corporation

20110062549 - Semiconductor device and method of forming integrated passive device: An IPD semiconductor device has a capacitor formed over and electrically connected to a semiconductor die. An encapsulant is deposited over the capacitor and around the semiconductor die. A first interconnect structure is formed over a first surface of the encapsulant by forming a first conductive layer, forming a first... Agent: Stats Chippac, Ltd.

20110062550 - Hydrogen barrier for ferroelectric capacitors: An integrated circuit containing a FeCap array. The FeCap array is at least partially surrounded on the sides by hydrogen barrier walls and on the top by a hydrogen barrier top plate. A method for at least partially enclosing a FeCap array with hydrogen barrier walls and a hydrogen barrier... Agent: Texas Instruments Incorporated

20110062551 - Multilayer oxide on nitride on oxide structure and method for the manufacture of semiconductor devices: An integrated circuit device having a capacitor structure and methods of manufacture are disclosed. The device has a substrate, e.g., silicon wafer, silicon on insulator, epitaxial wafer. The device has a dielectric layer overlying the substrate and a polysilicon layer overlying the dielectric layer. The device has a tungsten silicide... Agent: Semiconductor Manufacturing International (shanghai) Corporation

20110062552 - Semiconductor device: A semiconductor device may include, but is not limited to a first electrode upwardly extending, and a second electrode upwardly extending along the first electrode. The first electrode includes a lower portion and an upper portion. The second electrode covers a bottom surface and an outer side surface of the... Agent: Elpida Memory, Inc.

20110062554 - High voltage floating well in a silicon die: In one embodiment, a graded n-doped region surrounding a well, and a spiral resistor connected to the well and to a p-doped region surrounding the graded n-doped region.... Agent:

20110062553 - Semiconductor device and method of manufacturing thereof: The semiconductor device (100) comprises at least one semiconductor element (20), a metallization structure comprising a first (31) and a second line (32) and extending thereon a resistor. An electrically insulating protection layer (36) is present on the resistor (35) and is defined in a pattern that is substantially identical... Agent: Nxp B.v.

20110062555 - Semiconductor structure having varactor with parallel dc path adjacent thereto: A semiconductor structure includes a semiconductor substrate having a first region of a first polarity and a second region of a second polarity adjacent to the first region; and a first terminal including: a first deep trench located in the first region, a first node dielectric abutting all but an... Agent: International Business Machines Incorporated

20110062556 - Compound semiconductor substrate: A compound semiconductor substrate which inhibits the generation of a crack or a warp and is preferable for a normally-off type high breakdown voltage device, arranged that a multilayer buffer layer 2 in which AlxGa1-xN single crystal layers (0.6≦X≦1.0) 21 containing carbon from 1×1018 atoms/cm3 to 1×1021 atoms/cm3 and AlyGa1-yN... Agent: Covalent Materials Corporation

20110062557 - 3d polysilicon diode with low contact resistance and method for forming same: A semiconductor p-i-n diode and method for forming the same are described herein. In one aspect, a SiGe region is formed between a region doped to have one conductivity (either p+ or n+) and an electrical contact to the p-i-n diode. The SiGe region may serve to lower the contact... Agent:

20110062558 - Semiconductor wafer for semiconductor components and production method: A semiconductor wafer for semiconductor components and to a method for its production is disclosed. In one embodiment, the semiconductor wafer includes a front side with an adjoining near-surface active zone as basic material for semiconductor component structures. The rear side of the semiconductor wafer is adjoined by a getter... Agent: Infineon Technologies Austria Ag

20110062559 - Planarization stop layer in phase change memory integration: A key hole structure and method for forming a key hole structure to form a pore in a memory cell. The method includes forming a first dielectric layer on a semiconductor substrate having an electrode formed therein, forming an isolation layer on the first dielectric layer, forming a second dielectric... Agent: International Business Machines Corporation

20110062560 - Bpsg film deposition with undoped capping: Semiconductor devices containing a CVD BPSG layer and an undoped CVD oxide cap layer are described. The cap layer can be any silicon oxide material with a thickness between about 50 Å and about 350 Å. The cap layer may be formed using a low temperature CVD process that is... Agent:

20110062561 - Semiconductor device and method of manufacturing the same: A method of manufacturing a semiconductor device comprising: forming a p type region and an n type region in a main surface of a semiconductor substrate, the p type region and the n type region being insulated from each other with an element-isolation region; forming a first insulating film on... Agent: Kabushiki Kaisha Toshiba

20110062562 - Dielectric layer structure: A dielectric layer structure includes an interlayer dielectric (ILD) layer covering at least a metal interconnect structure and a single tensile hydrophobic film. The ILD layer further includes a low-k dielectric layer, and the single tensile hydrophobic film is positioned on the low-k dielectric layer for counteracting at least a... Agent:

20110062565 - Method for manufacturing a microelectronic package comprising at least one microelectronic device: A method for manufacturing a microelectronic package (1) comprises the steps of providing two parts (13, 14) comprising electrically insulating material such as plastic; providing members (21, 22, 23) comprising electrically conductive material; providing a microelectronic device (30); positioning the electrically conductive members (21, 22, 23) and the microelectronic device... Agent: Nxp B.v.

20110062563 - Non-volatile memory with reduced mobile ion diffusion: Mobile ion diffusion causes a shift in the threshold voltage of non-volatile storage elements in a memory chip, such as during an assembly process of the memory chip. To reduce or avoid such shifts, a coating can be applied to a printed circuit board substrate or a leader frame to... Agent:

20110062564 - Semiconductor die containing lateral edge shapes and textures: Methods for singulating a semiconductor wafer into a plurality of individual dies that contain lateral edges or sidewalls and the semiconductor dies formed from these methods are described. The dies are formed from methods that use a front to back photolithography alignment process to form a photo-resist mask and an... Agent:

20110062566 - Semiconductor device, manufacturing method for semiconductor device, electronic component, circuit substrate, and electronic apparatus: A semiconductor device comprising: a substrate; a terminal on the substrate's first surface; a first electrode on the first surface connected to the terminal; an electronic element on the substrate's second surface; a second electrode connected to the electronic element; a groove on the second surface leading to the second... Agent: Seiko Epson Corporation

20110062567 - Leadframe and chip package: A leadframe including a die pad, leads, an outer frame, connecting bars and grounding bars is provided. Each of the grounding bars is suspended between two connecting bars by being connected with branches of the two connecting bars, such that the grounding bars are spaced by the die pad. The... Agent: Advanced Semiconductor Engineering, Inc.

20110062568 - Folded lands and vias for multichip semiconductor packages: Semiconductor packages and methods for making and using the same are described. The semiconductor packages contain a lead frame that has been folded to create folded leads that form a customized array of land pads and vias. The lead frame contains both longer folded lead and shorter folded leads. The... Agent:

20110062570 - Isolated stacked die semiconductor packages: Semiconductor packages that contain isolated, stacked dies and methods for making such devices are described. The semiconductor package contains both a first die with a first integrated circuit and a second die with a second integrated circuit that is stacked onto the first die while also being isolated from the... Agent:

20110062569 - Semiconductor device package with down-set leads: A QFP type packaged device includes down-set leads to allow for more I/O's and a smaller foot print. The device includes a die attached to a flag of a lead frame. Die pads are electrically connected to leads of the lead frame with wires. The leads are bent and include... Agent: Freescale Semiconductor, Inc

20110062573 - Double-side mountable mems package: The MEMS package has a mounting substrate on which one or more transducer chips are mounted wherein the mounting substrate has an opening. A top cover is attached to and separated from the mounting substrate by a spacer forming a housing enclosed by the top cover, the spacer, and the... Agent:

20110062571 - Optical device, integrated circuit device and system: An optical device for an integrated circuit device, includes a laminated substrate having a through-passage and a tubular frame in which an optical lens is mounted, the tubular frame having an end part inserted or integrated in the through-passage of the laminated substrate. A integrated circuit device includes an optical... Agent: St-ericsson Sa

20110062572 - Self-aligned silicon carrier for optical device supporting wafer scale methods: Disclosed is a carrier assembly for and a method of manufacturing an optical device. The method comprises providing a silicon substrate; attaching a number of optical dies on the silicon substrate to form an optical device carrier assembly; providing a corresponding number of through holes in the silicon substrate to... Agent: Zarlink Semiconductor Ab

20110062574 - Integrated circuit packaging system with package-on-package and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing an encapsulation system having a mold chase with a buffer layer attached thereto; forming a base integrated circuit package including: providing a base substrate, connecting an exposed interconnect to the base substrate, a portion of the exposed interconnect... Agent:

20110062575 - Semiconductor device and method of forming cavity in pcb containing encapsulant or dummy die having cte similar to cte of large array wlcsp: A semiconductor device has a PCB with a cavity formed in a first surface of the PCB. A stress compensating structure, such as an encapsulant or dummy die, is disposed in the cavity. An insulating layer is formed over the PCB and stress compensating structure. A portion of the insulating... Agent: Stats Chippac, Ltd.

20110062576 - Integrated circuit package and device: An integrated circuit package including: a substrate having front connection pads on a front face, an integrated circuit die linked to the front face of the substrate and having front connection pads, connection wires for connecting selected front pads of the integrated circuit die to selected front pads of the... Agent: St-ericsson Sa

20110062577 - Substrate and package with micro bga configuration: A substrate of a micro-BGA package is revealed, primarily comprising a substrate core, a first trace, and a second trace where the substrate core has a slot formed between a first board part and a second board part. The first trace is disposed on the first board part and has... Agent:

20110062579 - Group iii nitride based flip-chip integrated circuit and method for fabricating: A circuit substrate has one or more active components and a plurality of passive circuit elements on a first surface. An active semiconductor device has a substrate with layers of material and a plurality of terminals. The active semiconductor device is flip-chip mounted on the circuit substrate and at least... Agent: Cree, Inc.

20110062578 - Semiconductor device and method of manufacturing the same: A semiconductor device includes a semiconductor chip having a connection electrode on a surface side, and a resin substrate sealing a periphery of the semiconductor chip and formed to have a thickness from a back surface of the semiconductor chip to a lower side thereof, and the resin substrate whose... Agent: Shinko Electric Industries Co., Ltd.

20110062582 - Display device: A display device includes a display panel, and a semiconductor chip having plural bump electrodes and mounted on a substrate constituting the display panel. The plural bump electrodes include a first bump electrode arranged in the vicinity of a center for a longitudinal direction of the semiconductor chip, and a... Agent: Hitachi Displays, Ltd.

20110062580 - Protection layer for preventing ubm layer from chemical attack and oxidation: A protection layer formed of a CuGeyNz layer, a CuSixNz layer, a CuSixGeyNz layer or combinations thereof is formed on an under-bump metallurgy (UBM) layer for preventing the UBM layer from chemical attack and oxidation during subsequent processes.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110062581 - Semiconductor package: A semiconductor package includes a substrate, a first semiconductor chip module attached to the substrate, a conductive connection member attached to the first semiconductor chip module, and a second semiconductor chip module attached to the conductive connection member. The first and second semiconductor chip modules are formed to have step... Agent: Hynix Semiconductor Inc.

20110062583 - Stacked die package for peripheral and center device pad layout device: An assembly method is disclosed that includes providing a substrate, securing a first semiconductor device on a first surface thereof, and superimposing at least a second semiconductor device at least partially over the first semiconductor device. An outer peripheral portion of the second semiconductor device overhangs both the first semiconductor... Agent: Micron Technology, Inc.

20110062584 - Three-dimensionally integrated semicondutor device and method for manufacturing the same: A wiring substrate has, on each of opposite faces thereof, connection pad portions to which various circuit elements are connected, and wiring traces for connecting the connection pad portions. The wiring substrate also has a through wiring portion for establishing mutual connection between the connection pad portions and the wiring... Agent:

20110062586 - Chip for reliable stacking on another chip: A chip includes a device, a passivation layer, two dielectric layers, at least one upper redistribution layer, at least one lower redistribution layer, at least one tunnel, at least one conductor, a redistribution passivation layer and at least one solder ball. The device includes at least one pad. The tunnel... Agent: Mao Bang Electronic Co., Ltd.

20110062585 - Semiconductor device: A semiconductor device includes a semiconductor chip, an electrode pad provided in the semiconductor chip, in which the electrode pad includes Al as a major constituent and further includes Cu, a coupling member coupled to the electrode pad, in which the coupling member primarily includes Cu, a plurality of layers... Agent: Nec Electronics Corporation

20110062587 - Large grain size conductive structure for narrow interconnect openings: An interconnect structure having reduced electrical resistance and a method of forming such an interconnect structure are provided. The interconnect structure includes a dielectric material including at least one opening therein. The at least one opening is filled with an optional barrier diffusion layer, a grain growth promotion layer, an... Agent: International Business Machines Corporation

20110062588 - Semiconductor device and method for manufacturing same: A semiconductor device includes: a trench formed on an interlayer insulating film on a semiconductor substrate; a first barrier metal film formed to cover the bottom and sidewalls of the trench, the first barrier metal film being comprised of an electric conductor containing a platinum-group element, a refractory metal, and... Agent: Panasonic Corporation

20110062589 - Semiconductor device having copper wiring with increased migration resistance: A semiconductor device has: a semiconductor substrate formed with a plurality of semiconductor elements, a plurality of interlevel insulating films laminated above the semiconductor substrate, including a first and a second interlevel insulating films adjacent to each other; a first wiring trench formed in the first interlevel insulating film; and... Agent: Fujitsu Limited

20110062590 - Chip stacking device having re-distribution layer: A chip stacking device uses nano particle silver paste for re-distribution interconnection to form a structure having low resistance through trench filling or printing. Thus, due to its low resistance, it can effectively reduce the electrical instability due to voltage drop after current flows. Furthermore, power consumption is reduced too,... Agent: Mao Bang Electronic Co., Ltd.

20110062591 - Integrated circuit packaging system having through silicon via with direct interconnects and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing a through silicon via die having an interconnect through a silicon substrate; depositing a re-distribution layer on the through silicon via die and connected to the interconnects; mounting a structure over the through silicon via die; connecting the... Agent:

20110062592 - Delamination resistance of stacked dies in die saw: An integrated circuit structure includes a first die including TSVs; a second die over and bonded to the first die, with the first die having a surface facing the second die; and a molding compound including a portion over the first die and the second die. The molding compound contacts... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110062593 - Semiconductor packaging substrate and semiconductor device: A semiconductor packaging substrate with a plurality of pads arranged in a square grid pattern thereon, in which among the pads, two pads obliquely adjacent to each other are connected with through-holes respectively and another through-hole is provided between the through-holes connected with the two pads obliquely adjacent to each... Agent: Hitachi, Ltd.

20110062594 - Through hole electrode substrate, method for manufacturing the through hole electrode substrate, and semiconductor device using the through hole electrode substrate: To provide a through hole electrode substrate and a semiconductor device which uses the through hole electrode substrate which have improved electrical properties in a conductive part which passes through the front and back of a substrate, a through hole electrode substrate 100 of the invention comprises a substrate 102... Agent: Dai Nippon Printing, Co., Ltd.

20110062595 - Pattern structures in semiconductor devices: A pattern structure in a semiconductor device includes an extending line and a pad connected with an end portion of the extending line. The pad may have a width that is larger than a width of the extending line. The pad includes a protruding portion extending from a lateral portion... Agent: Samsung Electronics Co., Ltd

20110062597 - Package structures: A package structure includes a substrate, a first die and at least one second die. The substrate includes a first pair of parallel edges and a second pair of parallel edges. The first die is mounted over the substrate. The first die includes a third pair of parallel edges and... Agent: Taiwan Semiconductor Manufacturing Co., Ltd.

20110062596 - Semiconductor chip stacked structure and method of manufacturing same: A method of making a semiconductor chip stacked structure includes dicing a semiconductor wafer into semiconductor chips, the semiconductor chips respectively having a first surface and a second surface opposite thereto, the semiconductor chips having integrated circuits and pads on the first surfaces, arranging the semiconductor chips at intervals on... Agent: Shinko Electric Industries Co., Ltd.

20110062598 - Stacked-die package including substrate-ground coupling: Method and apparatus are provided for semiconductor device packages. In an example, an apparatus can include a first semiconductor device, a ground pad situated on an uppermost portion of the first semiconductor device and configured to electrically couple portions of the first semiconductor device to aground potential, and a second... Agent: Atmel Corporation

20110062599 - Integrated circuit packaging system with package stacking and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing a base package substrate; mounting a flip chip integrated circuit die on the base package substrate; applying a flip chip protective layer on the flip chip integrated circuit die including covering only a back side of the flip... Agent:

20110062600 - Semiconductor element module and method for manufacturing the same: An object is to provide a semiconductor element module having high reliability, superior electric connection and thermal connection and capable of securing sufficient cooling performance, and also to provide a method for manufacturing the same. The semiconductor element module (1) comprises an IGBT (2) and a diode (3) having electrodes... Agent:

20110062601 - Generating an integrated circuit identifier: The generation of a chip identifier supporting at least one integrated circuit, which includes providing a cutout of at least one conductive path by cutting the chip, the position of the cutting line relative to the chip conditioning the identifier.... Agent: Stmicroelectronics S.a.

20110062603 - Encapsulation architectures for utilizing flexible barrier films: An article and method of using spacer layer regions is provided, containing a gas compound, to reduce gas permeation through barrier films overlying a substrate comprising creating a spacer layer between one or more of the barrier films, wherein the spacer layer comprises at least one inert gaseous compound. In... Agent:

20110062602 - Integrated circuit packaging system with fan-in package and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing a base substrate; connecting a base component directly to the base substrate; mounting a stack component over the base component; attaching a flattened exposed interconnect directly on the stack component; and applying an encapsulant over the stack component... Agent:

20110062604 - Scratch-resistant coatings for protecting front-side circuitry during backside processing: Scratch-resistant coatings for protecting front-side microelectromechanical and semiconductor device features during backside processing are provided, along with methods of using the same. The coatings are non-photosensitive, removable, and tolerate high processing temperatures. These coatings also eliminate the need for a separate etch stop layer in the device design. The coatings... Agent: Brewer Science Inc.

20110057161 - Thermally shielded resistive memory element for low programming current: Various embodiments described herein provide a memory device including a variable resistance material having a thermally isolating and electrically conductive isolation region arranged between the variable resistance material and an electrode to allow for efficient heating of the variable resistance material by a programming current. An electrically and thermally isolating... Agent:

20110057162 - In via formed phase change memory cell with recessed pillar heater: A method for fabricating a phase change memory device including a plurality of in via phase change memory cells includes forming pillar heaters formed of a conductive material along a contact surface of a substrate corresponding to each of an array of conductive contacts to be connected to access circuitry,... Agent: International Business Machines Corporation

20110057163 - Nano-wire field effect transistor, method for manufacturing the transistor, and integrated circuit including the transistor: Provided is a method for fabricating a nano-wire field effect transistor including steps of: preparing a nano-wire field effect transistor including two columnar members made of a silicon crystal configuring a nano-wire on a substrate are arranged on a substrate in parallel and one above the other, and an SOI... Agent: National Institute Of Advanced Industrial Science And Technology

20110057164 - Carbon nanotube field emission device with overhanging gate: A carbon nanotube field emission device with overhanging gate fabricated by a double silicon-on-insulator process. Other embodiments are described and claimed.... Agent: California Institute Of Technology

20110057165 - Epitaxial formation structures and associated methods of manufacturing solid state lighting devices: Epitaxial formation structures and associated methods of manufacturing solid state lighting (“SSL”) devices with target thermal expansion characteristics are disclosed herein. In one embodiment, an SSL device includes a composite structure having a composite CTE temperature dependency, a formation structure on the composite structure, and an SSL structure on the... Agent: Micron Technology, Inc.

20110057167 - Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device: In the nitride based semiconductor optical device LE1, the strained well layers 21 extend along a reference plane SR1 tilting at a tilt angle α from the plane that is orthogonal to a reference axis extending in the direction of the c-axis. The tilt angle α is in the range... Agent: Sumitomo Electric Industries, Ltd.

20110057166 - Nonpolar iii-nitride light emitting diodes with long wavelength emission: A III-nitride film, grown on an m-plane substrate, includes multiple quantum wells (MQWs) with a barrier thickness of 27.5 nm or greater and a well thickness of 8 nm or greater. An emission wavelength can be controlled by selecting the barrier thickness of the MQWs. Device fabricated using the III-nitride... Agent: The Regents Of The University Of California

20110057168 - 3-terminal electronic device and 2-terminal electronic device: A 3-terminal electronic device includes: a control electrode; a first electrode and a second electrode; and an active layer that is provided between the first electrode and the second electrode and is provided to be opposed to the control electrode via an insulating layer. The active layer includes a collection... Agent: Sony Corporation

20110057169 - Systems, methods and apparatus for active compensation of quantum processor elements: Apparatus and methods enable active compensation for unwanted discrepancies in the superconducting elements of quantum processor. A qubit may include a primary compound Josephson junction (CJJ) structure, which may include at least a first secondary CJJ structure to enable compensation for Josephson junction asymmetry in the primary CJJ structure. A... Agent: D-wave Systems Inc.

20110057182 - Anthracene derivatives and organic electroluminescent device using same: Provided are a novel anthracene derivative and an organic light-emitting device using the same, and more particularly, an anthracene derivative having a core (e.g., an indenoanthracene core) where an anthracene moiety with excellent device characteristics is fused with a fluorene moiety or the like with excellent fluorescent properties, wherein an... Agent: Doosan Corporation

20110057184 - Compound for organic electroluminescent device and organic electroluminescent device: Disclosed is an organic electroluminescent device (organic EL device) that is improved in the luminous efficiency, fully secured of the driving stability, and of a simple structure and disclosed also is a compound useful therefor. The organic EL device comprises a light-emitting layer disposed between an anode and a cathode... Agent: Nippon Steel Chemical Co., Ltd.

20110057173 - Deuterated compounds for electronic applications: This invention relates to deuterated aryl-anthracene compounds that are useful in electronic applications. It also relates to electronic devices in which the active layer includes such a deuterated compound.... Agent: E. I. Du Pont De Nemours And Company

20110057172 - Filler for sealing organic light emmiting device and method for manufacturing the organic light emmiting device using the same: i

20110057183 - Light-emitting device, electronic device, and manufacturing method of light-emitting device: The present invention provides a light-emitting element and a light-emitting device which have high contrast, and specifically, provides a light-emitting device whose contrast is enhanced, not by using a polarizing plate but using a conventional electrode material. Reflection of external light is suppressed by provision of a light-absorbing layer included... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110057178 - Light-emitting element, light-emitting device, and method for manufacturing the same: Disclosed is a light-emitting element which includes a first light-emitting layer over and in contact with a hole-transport layer and a second light-emitting layer over and in contact with the first light-emitting layer. The first and the second light-emitting layers contain a bipolar host material and an emissive guest material.... Agent: Semiconductor Energy Laboratory, Co., Ltd.

20110057179 - Light-emitting element, light-emitting device, lighting device, and electronic device: A light-emitting element is provided, in which n (n is a natural number of two or more) EL layers are provided between an anode and a cathode. Between the m-th (in is a natural number, 1≦m≦n−1) EL layer and the (m+1)-th EL layer, a first layer containing any of an... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110057171 - Long lifetime phosphorescent organic light emitting device (oled) structures: An organic light emitting device is provided having an emissive layer with an internal interface. The concentration of a second phosphorescent material in a second organic layer is different from the concentration of a first phosphorescent material in a first organic layer, creating the interface. The materials in the first... Agent: Universal Display Corporation

20110057175 - Organic light emitting device: Embodiments of the present invention are directed to a heterocyclic compound and an organic light-emitting device including the heterocyclic compound. The organic light-emitting devices using the heterocyclic compounds have high-efficiency, low driving voltage, high luminance and long lifespan.... Agent:

20110057177 - Organic light emitting device: Embodiments of the present invention are directed to a heterocyclic compound and an organic light-emitting device including the heterocyclic compound. The organic light-emitting devices using the heterocyclic compounds have high-efficiency, low driving voltage, high luminance and long lifespan.... Agent:

20110057181 - Organic light emitting diode display: An organic light emitting diode (OLED) display includes a substrate main body, a thin film transistor formed on the substrate main body, and an OLED formed on the substrate main body. The thin film transistor includes a gate electrode, an oxide semiconductor layer disposed on the gate electrode in an... Agent:

20110057180 - Organic light-emitting diode: According to one embodiment, an organic light-emitting diode includes an anode and a cathode arranged apart from each other, an emission layer, arranged between the anode and cathode, containing a host material of polyvinyl(2,7-difluorocarbazole), a blue-emitting phosphorescent material, and an electron transport material, and a hole transport layer of polyvinylcarbazole... Agent:

20110057176 - Organic luminescent device and a production method for the same: where EF1 is a Fermi energy level of the conductive layer of the first electrode, EnL is an LUMO (lowest unoccupied molecular orbital) energy level of the n-type organic compound layer of the first electrode, and EpH is an HOMO (highest occupied molecular orbital) energy level of the p-type organic... Agent:

20110057174 - Sealing material and display device using the same: Disclosed are a sealing material including an inorganic particle, an organic binder, and a fiber-phased material, and a display device including the seal material.... Agent: Samsung Mobile Display Co., Ltd.

20110057170 - Solution processed electronic devices: forming a thick organic planarization layer over the substrate; forming on the planarization layer a multiplicity of thin first electrode structures having a first thickness, where the electrode structures have tapered edges with a taper angle of no greater than 75°; forming a buffer layer by liquid deposition of a... Agent: E.i. Du Pont De Nemours And Company

20110057187 - Light-emitting device and method for manufacturing the same: An object of the present invention is to provide a light-emitting device in which plural kinds of circuits are formed over the same substrate, and plural kinds of thin film transistors are provided in accordance with characteristics of the plural kinds of circuits. An inverted-coplanar thin film transistor, an oxide... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110057188 - Semiconductor device and method for manufacturing same: It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconductor layer of the thin film transistor contains a boron element or an aluminum element. The insulating layer containing a boron element... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110057185 - Thin film transistor: A thin film transistor includes a channel layer. The channel layer has a plurality of stacked oxide layers. The oxide layers are made of at least two different oxide materials. The channel layer modulates a threshold voltage of the thin film transistor. An insulating interface layer is formed between the... Agent: National Taiwan University

20110057186 - Transistor and display device: It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110057192 - Active matrix substrate and display unit provided with it: An active matrix substrate includes a substrate; scanning lines formed on the substrate; an insulating film covering the scanning lines; signal lines intersecting the scanning lines via the insulating film; switching elements formed on the substrate, each operating in response to a signal which is applied to the corresponding scanning... Agent: Sharp Kabushiki Kaisha

20110057191 - Display apparatus, manufacturing method thereof, and electronic equipment: A display apparatus is disclosed. The display apparatus includes a transistor formed on a substrate; an interlayer insulator formed on the transistor; a pixel electrode formed on the interlayer insulator; a first partition located above a contact hole which penetrates the interlayer insulator; and a second partition which intersects with... Agent: Ricoh Company, Ltd.

20110057189 - Display device and manufacturing method thereof: A display device includes a lower panel including a lower substrate and a pixel transistor formed on the lower substrate; and an upper panel facing the lower panel, and including an upper substrate, a sensing transistor formed on the upper substrate, and a readout transistor connected to the sensing transistor... Agent: Samsung Electronics Co., Ltd.

20110057193 - Flat-panel display semiconductor process for efficient manufacturing: An embodiment is a method and apparatus to fabricate a flat panel display. A poly-last structure is formed for a display panel using an amorphous silicon or amorphous silicon compatible process. The poly-last structure has a channel silicon precursor. The display panel is formed from the poly-last structure using a... Agent: Palo Alto Research Center Incorporated

20110057190 - Semiconductor device and display device: A semiconductor device including a circuit which does not easily deteriorate is provided. The semiconductor device includes a first transistor, a second transistor, a first switch, a second switch, and a third switch. A first terminal of the first transistor is connected to a first wiring. A second terminal of... Agent: Semiconductor Energy Laboratory Co., Ltd.

20110057194 - Thin film transistor array panel: A thin film transistor array panel, in which a middle storage electrode and a storage electrode overlapping a drain electrode of a thin film transistor thereby forming a storage capacitance are formed. Accordingly, sufficient storage capacitance may be formed without a decrease of the aperture ratio and light transmittance of... Agent:

20110057195 - Poly-si thin film transistor and organic light-emitting display having the same: A thin film transistor comprises an Si-based channel having a nonlinear electron-moving path, a source and a drain disposed at both sides of the channel, a gate disposed above the channel, an insulator interposed between the channel and the gate, and a substrate supporting the channel and the source and... Agent: Samsung Electronics Co., Ltd.

20110057199 - Antistatic gallium nitride based light emitting device and method for fabricating the same: The invention provides an antistatic gallium nitride based light emitting device and a method for fabricating the same. The method includes: growing an n-type GaN-based epitaxial layer, an active layer, a p-type GaN-based epitaxial layer and an undoped GaN-based epitaxial layer sequentially on a substrate; etching to remove parts of... Agent: Xiamen Sanan Optoelectronics Technology Co., Ltd.

20110057196 - Gan hemt with nitrogen-rich tungsten nitride schottky gate and method of forming the same: A GaN HEMT with Schottky gate is disclosed. The GaN HEMT sequentially has a GaN layer, an AlGaN layer, and a Schottky gate on a substrate, and a source and a drain on two sides of the Schottky gate. The Schottky gate is made by a material of nitrogen-rich tungsten... Agent: National Chiao Tung University

20110057197 - Gan single crystal substrate and method of manufacturing thereof and gan-based semiconductor device and method of manufacturing thereof: A GaN single crystal substrate has a main surface with an area of not less than 10 cm2, the main surface has a plane orientation inclined by not less than 65° and not more than 85° with respect to one of a (0001) plane and a (000-1) plane, and the... Agent: Sumitomo Electric Industries, Ltd.

20110057200 - Group iii nitride semiconductor device, epitaxial substrate, and method of fabricating group iii nitride semiconductor device: A group III nitride semiconductor device having a gallium nitride based semiconductor film with an excellent surface morphology is provided. A group III nitride optical semiconductor device 11a includes a group III nitride semiconductor supporting base 13, a GaN based semiconductor region 15, an active layer active layer 17, and... Agent: Sumitomo Electric Industries, Ltd.

20110057201 - Led element with a thin-layer semiconductor element made of gallium nitride: An LED module comprising an LED chip, with an active gallium nitride layer and a silicon platform on which the LED chip is arranged, wherein the silicon platform has two electrodes on the side facing away from the LED chip which are electrically connected to the LED chip and wherein... Agent: Ledon Lighting Jennersdorf Gmbh

20110057198 - Technique for development of high current density heterojunction field effect transistors based on (10-10)-plane gan by delta-doping: A delta (δ)-doped (10-10)-plane GaN transistor is disclosed. Delta doping can achieve a transistor having at least 10 times higher current density than a conventional (10-10)-plane GaN transistor.... Agent: The Regents Of The University Of California

20110057202 - Semiconductor device and method of fabricating the same: According to the embodiments, a semiconductor device using SiC and having a high breakdown voltage, a low on-resistance, and excellent reliability is provided. The semiconductor device includes a silicon carbide substrate having first and second main surfaces; a first silicon carbide layer of a first conductive type provided on the... Agent: Kabushiki Kaisha Toshiba

20110057203 - Package carrier: A package carrier suitable for carrying at least one light emitting device and at least one light receiving device includes a carrier substrate and a metal sheet. The carrier substrate includes a first carrying area and a second carrying area. The light emitting device is disposed in the first carrying... Agent: Elite Advanced Laser Corporation

20110057205 - Led with phosphor tile and overmolded phosphor in lens: Overmolded lenses and certain fabrication techniques are described for LED structures. In one embodiment, thin YAG phosphor plates are formed and affixed over blue LEDs mounted on a submount wafer. A clear lens is then molded over each LED structure during a single molding process. The LEDs are then separated... Agent:

20110057204 - Optical module: An optical module can reliably provide monitor light and can facilitate manufacturing by reducing the number of lens surfaces. Based on a surface shape of each first lens surface (14), the relationship in length between the optical path length of the second optical path and the optical path length of... Agent:

20110057206 - Fast photoconductor: A photoconductor having a layer stack (72) with a semiconductor layer (64) photoconductive for a predetermined wavelength range between two semiconductor boundary layers (62) with a larger band gap than the photoconductive semiconductor layer (64) on a substrate (60), wherein the semiconductor boundary layers (62) have deep impurities for trapping... Agent:

20110057209 - Light emitting device: Provided are a light emitting device. The light emitting device comprises a package body, an insulating layer on a surface of the package body, first and second electrode layers on the insulating layer, a light emitting diode disposed on the package body and electrically connected to the first and second... Agent: Lg Innotek Co., Ltd.

20110057208 - Light emitting display device: Provided is an organic light emitting display device sealed maintaining durability by preventing permeation of oxygen and moisture and improving impact resistance. The light emitting display device includes a first substrate; a second substrate disposed facing toward the first substrate; an emission unit disposed between the first substrate and the... Agent: Samsung Mobile Display Co., Ltd.

20110057210 - Organic electroluminescence device and method for producing the same: To provide an organic electroluminescence device including: a plurality of organic electroluminescence display portions, each of which includes at least an anode, a light-emitting layer and a cathode; a plurality of lenses which are placed over the organic electroluminescence display portions, and each of which controls an optical path of... Agent:

20110057207 - White-light emitting device: n is an integer equal to or larger than 2. λi, Ni, and Ki are respectively an average peak wavelength, an quantity, and an average output efficiency of the LED chips in one group. The variation of λi in different groups is Δλi. 5 nm≦Δλi≦30 nm. The wavelength converting material... Agent: Lextar Electronics Corp.

20110057211 - Light emitting diode display and method of manufacturing the same: A method of manufacturing LED display is provided. The method provides a sacrificial substrate on which RGB LED device layers are formed, respectively. The method etches and patterns the LED device layer to manufacture RGB LED devices, respectively. The method removes the sacrificial substrate in a lower side of the... Agent:

20110057212 - One-way transparent display systems: A display system includes a projection screen and a projector. The projection screen includes a retarder plate between a polarizer and a transparent screen. The projector projects an image through the polarizer and the retarder plate onto the transparent screen. The image is visible from a first side of the... Agent:

20110057213 - Iii-nitride light emitting device with curvat1jre control layer: A semiconductor structure comprises a III-nitride light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure further comprises a curvature control layer grown on a first layer. The curvature control layer is disposed between the n-type region and the first layer. The curvature control layer... Agent: Philips Lumileds Lighting Company, LLC

20110057214 - Epitaxial wafer, light-emitting element, method of fabricating epitaxial wafer and method of fabricating light-emitting element: s

20110057227 - Led comprising a multiband phosphor system: The invention relates to an LED module comprising at least one blue LED and a color conversion layer that is applied thereto and emits a mixed light of the blue light of the LED and the convened spectrum of the color conversion layer. The color conversion layer has at least... Agent: Ledon Lighting Jennersdorf Gmbh

20110057226 - Led module comprising a dome-shaped color conversion layer: An LED module comprises at least one LED chip (4) emitting monochromatic light having a first spectrum, a platform (2) on which the LED chip is mounted, a reflecting wall (9) that is separate from or integrated into the platform and surrounds the LED chip on all sides, and a... Agent: Lumitech Produktion Und Entwicklung Gmbh

20110057217 - Led package structure for increasing heat-dissipating and light-emitting efficiency and method for manufacturing the same: An LED package structure for increasing heat-dissipating and light-emitting efficiency includes a substrate unit, an alloy unit, a light-emitting unit, a conductive unit and a package unit. The substrate unit has a substrate body, a first conductive pad, a second conductive pad and a chip-placing pad. The alloy unit has... Agent:

20110057225 - Light emitting device: A light emitting device includes a leadframe, a light emitting unit, a transparent encapsulant, and a fluorescent colloid layer. The light emitting unit is disposed on the leadframe. The transparent encapsulant covers the light emitting unit, wherein the transparent encapsulant has a concave on which at least one reflective surface... Agent: Industrial Technology Research Institute

20110057223 - Light emitting device, light emitting device package and lighting system including the same: Embodiments relate to a light emitting device, a light emitting device package, and a lighting system including the same. The light emitting device includes a light emitting structure, a second electrode under the light emitting structure and an insulating layer disposed on the at least one of the protrusions. The... Agent:

20110057224 - Light emitting device, system and package: A light emitting device includes a light emitting structure formed from an active layer located between two semiconductor layers. An insulator extends through the active layer and at least partially through the semiconductor layers, and the light emitting structure is located between a first electrode and a second electrode layer.... Agent:

20110057215 - Light-emitting diode display module: An LED display module is provided, including a cover element, with the cover element having lenses on one side and the other side having a housing space to house a lighting module, a frame element and the water-proof pad located at the junction of the cover element and the frame... Agent:

20110057216 - Low profile optoelectronic device package: A low profile optoelectronic device package has a matalized transparent substrate, a chip and a dam ring. The matalized transparent substrate has a transparent board, a window area, and a metal pattern formed on a face of the transparent board and around the window area and having at least one... Agent: Tong Hsing Electric Industries Ltd.

20110057220 - Nitride semiconductor light-emitting device: A nitride semiconductor light-emitting device includes a laminate structure formed of a plurality of nitride semiconductor layers including a light-emitting layer, and having cavity facets facing each other, a first protection film made of AlN, formed over a light-emitting facet of the cavity facets, and a second protection film made... Agent:

20110057219 - Nitride-based semiconductor light emitting device: An exemplary nitride-based semiconductor light emitting device includes a substrate, a nitride-based multi-layered structure epitaxially formed on the substrate, a first-type electrode and a second-type electrode formed on the nitride-based multi-layered structure and connected with the first-type layer and the second-type layer, respectively. The multi-layered structure includes a first-type layer,... Agent: Hon Hai Precision Industry Co., Ltd.

20110057221 - Organic electroluminescence device and method for producing the same: To provide an organic electroluminescence device including: an organic electroluminescence portion which includes at least an anode, a light-emitting layer and a cathode; a sealing layer which covers a surface of the cathode of the organic electroluminescence portion; a lens which is provided over the sealing layer and controls an... Agent:

20110057222 - Organic electroluminescent element, and method for producing the same: The present invention provides a method for producing an organic electroluminescent element, the method including: arranging, on a surface of a substrate having an electrostatic charge, particles provided with a surface electrostatic charge opposite to the electrostatic charge on the surface of the substrate, so that the particles are fixed... Agent:

20110057218 - Radition-emittin semiconductor component,receptacle for a radiation-emitting semiconductor component,and method for producing a radiation-emitting semiconductor component: A semiconductor based component with radiation-emitting properties. A glass substrate (1) is provided, which has a first surface (2) and a second surface (1), where a semiconductor element (5) with radiation-emitting properties is accommodated on the first surface (2). Also disclosed is a method for fabricating a semiconductor based component,... Agent: Osram Opto Semiconductors Gmbh

20110057228 - Resin composition for optical semiconductor element housing package, and optical semiconductor light-emitting device obtained using the same: The present invention relates to a resin composition for forming an insulating resin layer for optical semiconductor element housing package having a concave portion in which a metal lead frame and an optical semiconductor element mounted thereon are housed, in which the resin composition includes the following ingredients (A) to... Agent: Nitto Denko Corporation

20110057229 - Organic light emissive device: A method of manufacturing an organic light emissive device comprising: depositing an organic light emissive layer over an anode and depositing a cathode over the organic light emissive layer, wherein the cathode comprises a trilayer structure formed by: depositing a first layer comprising an electron injecting material; depositing a second... Agent: Sumation Company Limited

20110057230 - Lateral insulated gate bipolar transistors (ligbts): This invention generally relates to lateral insulated gate bipolar transistors (LIGBTs), for example in integrated circuits, methods of increasing switching speed of an LIGBT, a method of suppressing parasitic thyristor latch-up in a bulk silicon LIGBT, and methods of fabricating an LIGBT. In particular, a method of suppressing parasitic thyristor... Agent:

20110057231 - Semiconductor device and method for manufacturing of the same: The present invention provides a semiconductor device including: a base substrate; a first semiconductor layer disposed on the base substrate; first ohmic electrodes disposed on a central region of the first semiconductor layer; a second ohmic electrode having a ring shape surrounding the first ohmic electrodes, on edge regions of... Agent: Samsung Electro-mechanics Co., Ltd.

20110057233 - Semiconductor component and method for manufacturing of the same: The present invention provides a semiconductor component. The semiconductor component in accordance with the present invention includes a lower layer including a low resistance layer and a high resistance layer with higher resistivity than the low resistance layer while surrounding a lateral surface of the low resistance layer; a source... Agent: Samsung Electro-mechanics Co., Ltd.

20110057235 - Semiconductor device: A semiconductor device according to one embodiment of the present invention includes a substrate, a compound semiconductor layer, a device region, a drain electrode, a source electrode, a source pad, a gate electrode and a metal. The substrate has a first aperture in a back surface thereof. The compound semiconductor... Agent: Kabushiki Kaisha Toshiba

20110057234 - Semiconductor device and method for manufacturing of the same: Disclosed is a semiconductor device including: a base substrate; a semiconductor layer disposed on the base substrate; an ohmic electrode part which has ohmic electrode lines disposed in a first direction, on the semiconductor layer; and a Schottky electrode part which is disposed to be spaced apart from the ohmic... Agent: Samsung Electro-mechanics Co., Ltd.

20110057232 - Semiconductor devices including shallow implanted regions and methods of forming the same: Methods of forming a semiconductor device include forming a dielectric layer on a Group III-nitride semiconductor layer, selectively removing portions of the dielectric layer over spaced apart source and drain regions of the semiconductor layer, implanting ions having a first conductivity type directly into the source and drain regions of... Agent: Cree, Inc.

20110057236 - Inertial sensor having a field effect transistor: An inertial sensor, having a field effect transistor which includes a gate electrode (9), a source electrode (3a′,3a″,3a′″), a drain electrode (3b′,3b″,3b′″) and a channel area (4) situated between the source electrode (3a′,3a″,3a′″) and the drain electrode (3b′,3b″,3b′″) and whose gate electrode (9) is situated at a distance above the... Agent:

20110057237 - Semiconductor devices and methods of forming thereof: Provided is a semiconductor device. The semiconductor device includes: a substrate; an active layer on the substrate; a capping layer on the active layer; source/drain electrodes on the capping layer; a gate electrode on the active layer; and a first void region on a first sidewall of the gate electrode... Agent: Electronics And Telecommunications Research Institute

20110057238 - Cmos pixel sensor with depleted photocollectors and a depleted common node: An active pixel sensor in a p-type semiconductor body includes an n-type common node formed below a pinning region. A plurality of n-type blue detectors more lightly doped than the common node are disposed below pinning regions and are spaced apart from the common node forming channels below blue color-select... Agent: Foveon, Inc.

20110057239 - Semiconductor device and manufacturing method thereof: A semiconductor device comprises a capacitor in which a lower electrode, an adhesive layer, a capacitance insulating film, and an upper electrode are provided in series. The capacitance insulating film has laminated films in which a first metal oxide film and a second metal oxide film are alternatively laminated so... Agent: Elpida Memory, Inc.

20110057240 - Semiconductor device and method of manufacturing the same: A semiconductor device includes a plurality of conduction plugs disposed on an active region, a bit line connected to a conduction plug of the plurality of conduction plugs which is disposed in a central portion of the active region, and storage nodes connected with conduction plugs of the plurality of... Agent: Hynix Semiconductor Inc.

20110057241 - Forming silicon trench isolation (sti) in semiconductor devices self-aligned to diffusion: Silicon trench isolation (STI) is formed between adjacent diffusions in a semiconductor device, such as between bitlines in a memory array. The STI may be self-aligned to the diffusions, and may prevent misaligned bitline (BL) contacts from contacting silicon outside of the corresponding bitlines. The bitline contacts may have sufficient... Agent:

20110057243 - Non-volatile memory with a stable threshold voltage on soi substrate: A non-volatile memory disposed in a SOI substrate is provided. The non-volatile memory includes a memory cell and a first conductive type doped region. The memory cell includes a gate, a charge storage structure, a bottom dielectric layer, a second conductive type drain region, and a second conductive type source... Agent: Ememory Technology Inc.

20110057242 - Nonvolatile semiconductor memory device: A nonvolatile semiconductor memory device having a source-side-injected split-gate type of nonvolatile memory cell which can be formed by a one-layer polysilicon CMOS process is provided. A memory cell includes a first memory cell unit including first and second diffusion regions formed on a semiconductor substrate surface, and first and... Agent:

20110057245 - Nonvolatile semiconductor memory device and a manufacturing method thereof: A nonvolatile semiconductor memory device according to an exemplary embodiment of the present invention including, a first gate electrode formed above a semiconductor substrate via a first insulating film, having a projecting part which projects in upper direction with a certain width; a second gate electrode formed beside a side... Agent: Renesas Electronics Corporation

20110057244 - Semiconductor device and method of manufacturing the same: A method of manufacturing a semiconductor device, comprising: forming, on a semiconductor substrate a gate insulating film for a high-voltage transistor of a peripheral circuit; forming on the gate insulating film a gate electrode for the high-voltage transistor; removing the gate insulating film positioned on the semiconductor substrate on both... Agent: Kabushiki Kaisha Toshiba

20110057246 - Non-volatile memory device and method for manufacturing the same: According to one embodiment, a non-volatile memory device includes a stacked structure and a voltage application portion. The stacked structure includes a memory portion, and an electrode stacked with the memory portion and having a surface having a portion facing the memory portion. The voltage application portion applies a voltage... Agent: Kabushiki Kaisha Toshiba

20110057247 - Fin-fet non-volatile memory cell, and an array and method of manufacturing: A non-volatile memory cell has a substrate layer with a fin shaped semiconductor member of a first conductivity type on the substrate layer. The fin shaped member has a first region of a second conductivity type and a second region of the second conductivity type, spaced apart from the first... Agent: Silicon Storage Technology, Inc.

20110057252 - Method for forming gate oxide of semiconductor device: Disclosed herein is a method for forming a triple gate oxide of a semiconductor device. The method for forming a triple gate oxide of a semiconductor device includes the steps of defining a first region where a gate oxide having a first thickness will be formed, a second region where... Agent:

20110057249 - Nonvolatile semiconductor memory device and method for manufacturing same: According to one embodiment, a nonvolatile semiconductor memory device includes a substrate, a stacked structural body, a semiconductor pillar, and a memory unit. The stacked structural body is provided on a major surface of the substrate. The stacked structural body includes electrode films alternately stacked with inter-electrode insulating films in... Agent:

20110057250 - Nonvolatile semiconductor memory device and method of manufacturing the same: A plurality of conductive layers are stacked in a first region and a second region. A semiconductor layer is surrounded by the conductive layers in the first region, includes a columnar portion extending in a perpendicular direction with respect to a substrate. A charge storage layer is formed between the... Agent: Kabushiki Kaisha Toshiba

20110057251 - Nonvolatile semiconductor memory device and method of manufacturing the same: A nonvolatile semiconductor memory device includes a first region having a plurality of electrically rewritable memory cells disposed therein, and a second region adjacent to the first region. The nonvolatile semiconductor memory device includes a plurality of first conductive layers, a semiconductor layer, a charge storage layer, and an insulating... Agent: Kabushiki Kaisha Toshiba

20110057248 - Varied silicon richness silicon nitride formation: A method, in one embodiment, can include forming a tunnel oxide layer on a substrate. In addition, the method can include depositing via atomic layer deposition a first layer of silicon nitride over the tunnel oxide layer. Note that the first layer of silicon nitride includes a first silicon richness.... Agent:

20110057253 - Semiconductor device and method of manufacturing same: A semiconductor device includes a first transistor including a first source/drain region and a first sidewall spacer, and a second transistor including a second source/drain region and a second sidewall spacer, the first sidewall spacer has a first width and the second sidewall spacer has a second width wider than... Agent: Fujitsu Semiconductor Limited

20110057254 - Metal-oxide-semiconductor chip and fabrication method thereof: A metal-oxide-semiconductor chip having a semiconductor substrate, an epitaxial layer, at least a MOS cell, and a metal pattern layer is provided. The epitaxial layer is located on the semiconductor substrate and has an active region, a termination region, and a scribe line preserving region defined on an upper surface... Agent: Niko Semiconductor Co., Ltd.

20110057255 - Semiconductor device and method for manufacturing the same: A semiconductor device includes a first conductive type semiconductor substrate; a first conductive type semiconductor region provided thereon in which first conductive type first pillar regions and second conductive type second pillar regions alternately arranged; second conductive type second semiconductor regions provided on second pillar regions in an element region... Agent: Sony Corporation

20110057256 - Semiconductor device and method for manufacturing the same: A semiconductor device includes a first conductive type semiconductor substrate; a first conductive type semiconductor region provided thereon in which first conductive type first pillar regions and second conductive type second pillar regions alternately arranged; second conductive type second semiconductor regions provided on second pillar regions in an element region... Agent: Sony Corporation

20110057257 - Semiconductor device and method for manufacturing the same: The present invention provides a semiconductor device including: a base substrate; a semiconductor layer which is disposed on the base substrate and has a recess structure formed thereon; a gate structure covering the recess structure; a source electrode and a drain electrode which are disposed to be spaced apart from... Agent: Samsung Electro-mechanics Co., Ltd.

20110057258 - Dual stress device and method: A semiconductor device including semiconductor material having a bend and a trench feature formed at the bend, and a gate structure at least partially disposed in the trench feature. A method of fabricating a semiconductor structure including forming a semiconductor material with a trench feature over a layer, forming a... Agent: International Business Machines Corporation

20110057259 - Method for forming a thick bottom oxide (tbo) in a trench mosfet: A method for forming a thick bottom oxide in the bottom of a trench used in a vertical MOSFET. Initially, an n-type substrate has an n-type epitaxial layer grown thereon. A top portion of the n-type epitaxial layer is implanted with p-type dopants to provide a p-layer. A trench is... Agent:

20110057260 - Semiconductor device: A dummy transistor and a field effect transistor are arranged in a second direction. The dummy transistor is located at least at one end in a second direction.... Agent: Elpida Memory, Inc.

20110057261 - Semiconductor device having recess channel structure and method for manufacturing the same: A semiconductor device having a recess channel structure includes a semiconductor substrate having a recess formed in a gate forming area in an active area; an insulation layer formed in the semiconductor substrate so as to define the active area and formed so as to apply a tensile stress in... Agent: Hynix Semiconductor Inc.

20110057262 - Semiconductor device: A semiconductor device including a substrate, an epitaxial layer, a first sinker, a transistor, a diode unit, a first buried layer, and a second buried layer is provided. When the semiconductor device is operated at the high voltage, the highly large substrate current due to the external load is avoided... Agent: Episil Technologies Inc.

20110057263 - Ultra high voltage mos transistor device: An ultra high voltage MOS transistor device includes a substrate having a first conductive type, a first well having a second conductive type and a second well having the first conductive type formed in the substrate, a drain region having the second conductive type formed in the first well, a... Agent:

20110057264 - Method for protecting the gate of a transistor and corresponding integrated circuit: A gate of a transistor in an integrated circuit is protected against the production of an interconnection terminal for a source/drain region. The transistor includes a substrate, at least one active zone formed in the substrate, at least one insulating zone formed in the substrate and a gate, the gate... Agent: Stmicroelectronics (crolles 2) Sas

20110057265 - Semiconductor device and manufacturing method of the same: Provided is a highly reliable semiconductor device equipped with a plurality of semiconductor elements having desired properties, respectively; and a manufacturing method facilitating the manufacture of the semiconductor device. The semiconductor device is manufactured by forming a gate-electrode metal film having a thickness of from 3 to 30 nm over... Agent: Renesas Electronics Corporation

20110057266 - Bipolar transistor integrated with metal gate cmos devices: A high-k gate dielectric layer and a metal gate layer are formed and patterned to expose semiconductor surfaces in a bipolar junction transistor region, while covering a CMOS region. A disposable material portion is formed on a portion of the exposed semiconductor surfaces in the bipolar junction transistor area. A... Agent: International Business Machines Corporation

20110057267 - Polysilicon design for replacement gate technology: The present disclosure provides an integrated circuit. The integrated circuit includes a semiconductor substrate; and a passive polysilicon device disposed over the semiconductor substrate. The passive polysilicon device further includes a polysilicon feature; and a plurality of electrodes embedded in the polysilicon feature.... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110057268 - Semiconductor device and method for fabcricating the same: A semiconductor device includes a resistive element and a MISFET. The resistive element includes a first conductive film formed on the semiconductor substrate and containing a metal, a second conductive film formed on the first conductive film and containing silicon, and an insulating film formed between the first conductive film... Agent:

20110057269 - Semiconductor structures including dual fins: Fin-FET (fin field effect transistor) devices and methods of fabrication are disclosed. The Fin-FET devices include dual fin structures that may form a channel region between a source region and a drain region. In some embodiments, the dual fin structures are formed by thinning shallow trench isolation structures, using a... Agent: Micron Technology, Inc.

20110057270 - Semiconductor device: A semiconductor device includes, a gate insulating film, a gate electrode, a source/drain region, and a Si mixed crystal layer in the source/drain region. The Si mixed crystal layer includes a first Si mixed crystal layer that includes impurities with a first concentration, a second Si mixed crystal layer formed... Agent: Fujitsu Semiconductor Limited

20110057271 - Semiconductor device with increased breakdown voltage: Optimization of the implantation structure of a metal oxide silicon field effect transistor (MOSFET) device fabricated using conventional complementary metal oxide silicon (CMOS) logic foundry technology to increase the breakdown voltage. The techniques used to optimize the implantation structure involve lightly implanting the gate region, displacing the drain region from... Agent: Broadcom Corporation

20110057272 - Semiconductor device and method of manufacturing the same: A method of manufacturing a semiconductor device includes forming an insulating layer over a semiconductor region; forming a multilayer resist composite including a plurality of resist layers over the insulating layer; forming an opening in the resist layers of the multilayer resist composite except in the lowermost resist layer adjacent... Agent: Fujitsu Limited

20110057273 - System with recessed sensing or processing elements: Backside recesses in a base member host components, such as sensors or circuits, to allow closer proximity and efficient use of the surface space and internal volume of the base member. Recesses may include covers, caps, filters and lenses, and may be in communication with circuits on the frontside of... Agent: Analog Devices, Inc.

20110057274 - Acceleration sensor, semiconductor device and method of manufacturing semiconductor device: The acceleration sensor according to the present invention includes a circuit chip having a prescribed circuit built into a front surface thereof; a sensor chip bonded to the front surface of the circuit chip; and a resin package for sealing the circuit chip and the sensor chip, while the sensor... Agent: Rohm Co., Ltd.

20110057275 - Semiconductor device and manufacturing method thereof: To provide a semiconductor device capable of write operation to a selected magnetoresistive element without causing a malfunction of a non-selected magnetoresistive element and a manufacturing method of this semiconductor device. The semiconductor device includes a magnetic storage element having a magnetization free layer whose magnetization direction is made variable... Agent: Renesas Electronics Corporation

20110057276 - Method for manufacturing a photovoltaic cell structure: In the frame of manufacturing a photovoltaic cell a layer (3) of silicon compound is deposited on a structure (1). The yet uncovered surface (3a) is treated in a predetermined oxygen (O2) containing atmosphere which additionally contains a dopant (D). Thereby, the silicon compound layer is oxidized and doped in... Agent: Oerlikon Solar Ag, Truebbach

20110057279 - Anti-reflective image sensor: An anti-reflective image sensor and method of fabrication are provided, the sensor including a substrate; first color sensing pixels disposed in the substrate; second color sensing pixels disposed in the substrate; third color sensing pixels disposed in the substrate; a first layer disposed directly on the first, second and third... Agent:

20110057280 - Color imaging device and color imaging device fabricating method: In a color imaging device in which a color filter layer is formed respectively for a plurality of photoelectric conversion elements arranged on a substrate, the color filter layer comprises an underlying layer of a transparent resin and a pigment layer. The pigment layer is heat fused on the underlying... Agent: Panasonic Corporation

20110057277 - Image sensor structure and fabricating method therefor: An image sensor structure and a method for making the image sensor structure, for avoiding or mitigating lens shading effect. The image sensor structure includes a substrate, a sensor array disposed at the surface of the substrate, a dielectric layer covering the sensor array, wherein the dielectric layer includes a... Agent:

20110057278 - X-ray detector using liquid crystal device: An X-ray detector includes a first substrate having a bottom surface on which a first electrode is formed. A second substrate has a top surface on which a second electrode and a polyimide layer are sequentially formed. A photoconductive layer is formed on a bottom surface of the first electrode... Agent:

20110057281 - Wafer level packaged integrated circuit: A wafer level packaged integrated circuit includes an array of contacts, a silicon layer and a glass layer. The silicon and glass layers are bonded together to form a bonding material layer therebetween. The bonding material layer includes gaps between the silicon layer and the glass layer at areas where... Agent: Stmicroelectronics (research & Development) Limited

20110057282 - Pixel sensors of multiple pixel size and methods of implant dose control: CMOS pixel sensors with multiple pixel sizes and methods of manufacturing the CMOS pixel sensors with implant dose control are provided. The method includes forming a plurality of pixel sensors in a same substrate and forming a masking pattern over at least one of the plurality of pixel sensors that... Agent: International Business Machines Corporation

20110057283 - Photoelectric conversion element, photoelectric conversion element assembly and photoelectric conversion module: A photoelectric conversion element of the present invention comprises: a first semiconductor layer of a first conductivity type; a first electrode arranged on the back side of the first semiconductor layer and electrically connected to the first semiconductor layer; a second semiconductor layer of a second conductivity type, the second... Agent:

20110057284 - Cmos image sensor having a curved semiconductor chip: A digital image sensor includes a planar substrate with one or more bonding pads on one side and a silicon chip with one or more bonding pads. The silicon chip is attached on the planar substrate through the one or more bonding pads. The attachment of the silicon chip to... Agent: Stmicroelectronics (research & Development) Limited

20110057285 - Sensor for detecting thermal radiation: A sensor having a monolithically integrated structure for detecting thermal radiation includes: a carrier substrate, a cavity, and at least one sensor element for detecting thermal radiation. Incident thermal radiation strikes the sensor element via the carrier substrate. The sensor element is suspended in the cavity by a suspension.... Agent:

20110057286 - Semiconductor device and method for manufacturing of the same: The present invention provides a semiconductor device including: a base substrate; a first semiconductor layer which is disposed on the base substrate and has a front surface and a rear surface opposite to the front surface; first ohmic electrodes disposed on the front surface of the first semiconductor layer; a... Agent: Samsung Electro-mechanics Co., Ltd.

20110057287 - Semiconductor device having dual-sti and manufacturing method thereof: A semiconductor device having a memory cell area and a peripheral circuit area includes a silicon substrate and an isolation structure implemented by a silicon oxide film formed on a surface of the silicon substrate. A depth of the isolation structure in the memory cell area is smaller than a... Agent: Renesas Electronics Corporation

20110057288 - Mems device and method for fabricating the same: A microelectromechanical system (MEMS) device and a method for fabricating the same are described. The MEMS device includes a first electrode and a second electrode. The first electrode is disposed on a substrate, and includes at least two metal layers, a first protection ring and a dielectric layer. The first... Agent: United Microelectronics Corp.

20110057289 - Ultrashallow emitter formation using ald and high temperature short time annealing: An integrated circuit containing a bipolar transistor including an emitter diffused region with a peak doping density higher than 1·1020 atoms/cm3, and an emitter-base junction less than 40 nanometers deep in a base layer. A process of forming the bipolar transistor, which includes forming an emitter dopant atom layer between... Agent: Texas Instruments Incorporated

20110057290 - Fuse of semiconductor device and method for forming the same: A fuse of a semiconductor device comprises: a fuse pattern formed on a semiconductor substrate; an insulating film covering one side of the fuse pattern and including a trench; a conductive line disposed on the insulating film including the trench. The fuse of the semiconductor device prevents generation of cracks... Agent: Hynix Semiconductor Inc.

20110057291 - Ultra high speed signal transmission/recepton: An interconnect for transmitting an electric signal between electronic devices includes a first coupling element electromagnetically coupled to, and immediately juxtaposed to, a second coupling element. The first coupling element is mounted on and is electrically connected to a first electronic device having a first integrated circuit. The second coupling... Agent: Scanimetrics Inc.

20110057292 - Capacitors and interconnects including at least two portions of a metal nitride material, methods of forming such structures, and semiconductor devices including such structures: Metal-insulator-metal capacitors with a bottom electrode including at least two portions of a metal nitride material. At least one of the portions of the metal nitride material includes a different material than another portion. Interconnects including at least two portions of a metal nitride material are also disclosed, at least... Agent: Micron Technology, Inc.

20110057293 - Metal-oxide-metal capacitor having low parasitic capacitor: A metal-oxide-metal capacitor including a first metal layer of negative electric charge, a second metal layer of the negative electric charge, and at least a third metal layer formed between the first metal layer and the second metal layer, each of the at least a third metal layer including a... Agent:

20110057295 - Epitaxial substrate component made therewith and corresponding production method: Proposed is a III-V-semiconductor-containing epitaxial substrate comprising at least one layer of porous III-V semiconductor material, together with a corresponding production method. Also specified is a component, particularly an LED, produced on the proposed epitaxial substrate, and a corresponding production method.... Agent: Osram Opto Semiconductors Gmbh

20110057294 - Formation of substantially pit free indium gallium nitride: A method of fabricating a device layer structure includes providing a III-nitride semiconductor layer which is bonded to a bonding substrate. A device layer structure is formed on a nitrogen polar surface of the III-nitride semiconductor layer. The device layer structure includes an indium gallium nitride layer with a metal... Agent:

20110057296 - Delamination resistant packaged die having support and shaped die having protruding lip on support: A packaged electronic device includes a thickness shaped IC die including a top portion, top surface, active circuitry, bottom portion and bottom surface. A cross sectional area of the bottom surface is ≧5% less than a cross sectional area of the top surface to provide a protruding lip having a... Agent: Texas Instruments Incorporated

20110057297 - Semiconductor chips having guard rings and methods of fabricating the same: Provided is a semiconductor chip. The semiconductor chip includes a semiconductor substrate including a main chip region and a scribe lane region surrounding the main chip region. An insulating layer is disposed over the semiconductor substrate. A guard ring is disposed in the insulating layer in the scribe lane region.... Agent:

20110057298 - Partially patterned lead frames and methods of making and using the same in semiconductor packaging: A method of making a lead frame and a partially patterned lead frame package with near-chip scale packaging lead-count, wherein the method lends itself to better automation of the manufacturing line and improved quality and reliability of the packages produced therefrom. A major portion of the manufacturing process steps is... Agent:

20110057299 - Method of manufacturing semiconductor device and semiconductor device: Height control of a capillary is performed in a stitch bonding (2nd bond) in a wire bonding, so that a thickness of a stitch portion can be controlled, thereby ensuring a bonding strength at the stitch portion and achieving an improvement in a bonding reliability. Also, the stitch portion has... Agent: Renesas Electronics Corporation

20110057300 - Direct contact leadless flip chip package for high current devices: Some exemplary embodiments of an advanced direct contact leadless package and related structure and method, especially suitable for packaging high current semiconductor devices, have been disclosed. One exemplary structure comprises a mold compound enclosing a first contact lead frame portion, a paddle portion, and an extended contact lead frame portion... Agent: International Rectifier Corporation

20110057302 - Impedance optimized chip system: A high bandwidth circuit is segmented into a plurality of portions, each portion for implementation on a corresponding semiconductor chip, an arrangement of one or more die bond pads for each corresponding chip is generated, and a chip location for each corresponding chip is generated, given package and given package... Agent: Nxp B.v

20110057301 - Semiconductor package: A semiconductor package includes a patterned metal foil, a chip, wires, a patterned dielectric layer, an adhesive layer, and a molding compound. The patterned metal foil has a first surface and a second surface opposite thereto. The patterned dielectric layer is disposed on the second surface and has openings exposing... Agent: Advanced Semiconductor Engineering, Inc.

20110057303 - Package for an integrated circuit: According to various illustrative embodiments of the present invention, a device for an integrated circuit includes a monolithic frame having a plurality of alignment features disposed thereon, the monolithic frame having a mounting surface disposed thereon for the integrated circuit, the monolithic frame also having a thermal interface area disposed... Agent: Texas Instruments Incorported

20110057304 - Method for fabricating a semiconductor and semiconductor package: A method for fabricating a semiconductor chip module and a semiconductor chip package is disclosed. One embodiment provides a first layer, a second layer, and a base layer. The first layer is disposed on the base layer, and the second layer is disposed on the first layer. A plurality of... Agent: Infineon Technologies Ag

20110057305 - Package substrate having semiconductor component embedded therein and fabrication method thereof: A package substrate having a semiconductor component embedded therein and a method of fabricating the same are provided, including: providing a semiconductor chip with electrode pads disposed on an active surface thereof; forming a passivation layer on the active surface and the electrode pads; forming on the passivation layer metal... Agent: Phoenix Precision Technology Corporation

20110057306 - Edge mounted integrated circuits with heat sink: A module has a substrate, first and second integrated circuits, and a heat sink. The integrated circuits each have a first major surface, a second major surface, a first edge, a second edge, and a third edge and have optical circuits having ports on the first edge and electronic circuits... Agent:

20110057312 - Contact structure and method for producing a contact structure: The invention relates to a contact structure (24) and to a method for producing a contact structure for semiconductor substrates (21) or the like, in particular for terminal faces of semiconductor substrates, comprising a base contact part (22) arranged on a terminal face (20) of the semiconductor substrate and at... Agent:

20110057308 - Integrated circuit packaging system with conductive pillars and method of manufacture thereof: A method of manufacture of an integrated circuit packaging system includes: providing a substrate; forming a conductive pillar, having substantially parallel vertical sides, in direct contact with the substrate; mounting an integrated circuit to the substrate beside the conductive pillar; and encapsulating the integrated circuit with an encapsulation having a... Agent:

20110057307 - Semiconductor chip with stair arrangement bump structures: Various semiconductor chip input/output structures and methods of making the same are disclosed. In one aspect, a method of manufacturing is provided that includes forming a first conductor structure on a first side of a semiconductor chip and forming a second conductor structure in electrical contact with the first conductor... Agent:

20110057311 - Semiconductor device and manufacturing method therefor: A semiconductor device is obtained, in which excellent characteristics are achieved, the reliability is improved, and an SiC wafer can also be used for the fabrication. A plurality of Schottky-barrier-diode units 10 is formed on an SiC chip 9, and each of the units 10 has an external output electrode... Agent: Mitsubishi Denki Kabushiki Kaisha

20110057310 - Semiconductor package having memory devices stacked on logic device: A semiconductor package includes a base substrate, a logic device with a serializer/deserializer (SerDes), a plurality of odd memory devices disposed on a lower surface of the logic device and operatively stack-connected with the SerDes, and a plurality of even memory devices disposed on an upper surface of the logic... Agent: Samsung Electronics Co., Ltd.

20110057309 - Structure, method and system for assessing bonding of electrodes in fcb packaging: Structures, methods, and systems for assessing bonding of electrodes in FCB packaging are disclosed. In one embodiment, a method comprises mounting a semiconductor chip with a plurality of first electrodes of a first shape to a mounted portion with a second electrode of a second shape, wherein the second shape... Agent:

20110057313 - Enhanced copper posts for wafer level chip scale packaging: An enhanced wafer level chip scale packaging (WLCSP) copper electrode post is described having one or more pins that protrude from the top of the electrode post. When the solder ball is soldered onto the post, the pins are encapsulated within the solder material. The pins not only add shear... Agent: Taiwan Semiconductor Manufacturing Company, Ltd.

20110057314 - Conductors for photovoltaic cells: The invention relates to conductive pastes including one or more acids, or acid-forming components for silicon semiconductor devices and photovoltaic cells.... Agent: E. I. Du Pont De Nemours And Company

20110057315 - Memory device peripheral interconnects: An integrated circuit memory device, in one embodiment, includes a substrate and first and second inter-level dielectric layers successively disposed on the substrate. One or more contacts in the peripheral extend through the first inter-level dielectric layer to respective components. One or more vias and a plurality of dummy vias... Agent:

20110057317 - Contact plug structure, semiconductor device, and method for forming contact plug: A contact plug structure formed on a contact hole of an insulating layer of a semiconductor device includes a metal silicide layer formed on a bottom part of the contact hole of the insulating layer, a manganese oxide layer formed on the metal silicide layer in the contact hole, and... Agent: Advanced Interconnect Materials, LLC

20110057316 - Copper wiring line of semiconductor device and method for forming the same: A copper wiring of a semiconductor device is which is resistant to unwanted diffusion of copper from away from the copper wiring is presented. The copper wiring includes an interlayer dielectric, a self-assembly monolayer, a plurality of catalyst particles, a metal layer, and a copper layer. The interlayer dielectric on... Agent: Iucf-hyu (industry-university Cooperation Foundation Hanyang University)

20110057319 - Arranging through silicon vias in ic layout: A portion of an IC layout that includes a plurality of through silicon vias (TSVs) is evaluated to identify linearly aligned TSVs. The portion of the IC layout is modified to reduce a number of the linearly aligned TSVs, resulting in less wafer breakage.... Agent: International Business Machines Corporation

20110057318 - Die package: A die is packaged. The package of the die has a line groove filled with a conductive material. A metal pad is exposed out of a solder mask. And the metal pad is connected with a die pad on the die through the line groove in a deflective way. In... Agent: Mao Bang Electronic Co., Ltd.

20110057320 - Semiconductor integrated circuit and design method thereof: In a layout process of a semiconductor integrated circuit, a power supply is initially formed in an arrangement in which the current threshold value is not exceeded. In a case where the excess over the current threshold value occurs after the power supply is formed, the power supply arrangement is... Agent: Panasonic Corporation

20110057321 - 3-d multi-wafer stacked semiconductor structure and method for manufacturing the same: A 3-D multi-wafer stacked semiconductor structure and method for manufacturing the same. The method comprises steps of: providing a first wafer, a first circuit layer being formed on a surface thereof; bonding the first circuit layer with a carrier; performing a first thinning process on the first wafer; forming a... Agent: Industrial Technology Research Institute

20110057322 - Carbon nanotube interconnect and method of manufacturing the same: According to one embodiment, a carbon nanotube interconnect includes a first interconnection layer, an interlayer dielectric film, a second interconnection layer, a contact hole, a plurality of carbon nanotubes and a film. The interlayer dielectric film is formed on the first interconnection layer. The second interconnection layer is formed on... Agent:

20110057325 - Chip-size double side connection package and method for manufacturing the same: A low resistance metal is charged into holes formed in a semiconductor substrate to thereby form through electrodes. Post electrodes of a wiring-added post electrode component connected together by a support portion thereof are simultaneously fixed to and electrically connected to connection regions formed on an LSI chip. On the... Agent:

20110057326 - Method for forming through electrode and semiconductor device: An electrode on a first surface of a semiconductor substrate and a second surface of the semiconductor substrate are connected with each other by a through electrode. A through hole is formed through the semiconductor substrate from the second surface of the semiconductor substrate to an interlayer insulating film on... Agent:

20110057323 - Packaging structure having embedded semiconductor element and method for fabricating the same: A method for fabricating a packaging structure having an embedded semiconductor element includes: providing a substrate having opposite first and second surfaces and at least an opening region predefined on the first surface; forming a first metallic frame around the periphery of the predefined opening region on the first surface;... Agent: Unimicron Technology Corporation

20110057324 - Structure and method of making interconnect element having metal traces embedded in surface of dielectric: An interconnect element is provided. A monolithic dielectric element has a first exposed major surface, a plurality of first recesses extending inwardly from the first major surface, and a second exposed major surface remote from the first major surface, a plurality of second recesses extending inwardly from the second major... Agent: Tessera Interconnect Materials, Inc.

20110057327 - Semiconductor device and method of manufacturing the same: A semiconductor device includes a first wiring hoard, a second semiconductor chip, and a second seal. The first wiring board includes a first substrate, a first semiconductor chip, and a first seal. The first semiconductor chip is disposed on the first substrate. The first seal is disposed on the first... Agent: Elpida Memory, Inc.

20110057328 - Semiconductor device and semiconductor package having the same: A semiconductor device having no voids and a semiconductor package using the same is described. The semiconductor device includes a semiconductor chip having a circuit section which is formed in a first area and a peripheral section which is formed in a second area defined around the first area, and... Agent: Hynix Semiconductor Inc.

20110057329 - Electronic device and manufacturing method of electronic device: It is desired to provide an electronic device which can be easily taken out of a mold after resin sealing processing. The electronic device includes: an insulating layer; a wiring layer formed on a surface of the insulating layer; a first solder resist formed to cover the insulating layer and... Agent: Renesas Electronics Corporation

20110057330 - Electronic device and method of manufacturing electronic device: It is desired to provide an electronic device which can be easily taken out of a mold after a resin sealing processing. The electronic device include: an insulating layer; a wiring formed on the insulating layer; and a solder resist layer formed to cover the insulation layer and the wiring... Agent: Renesas Electronics Corporation

20110057332 - Semiconductor chip with conductive adhesive layer and method of manufacturing the same, and method of manufacturing semiconductor device: A method of manufacturing a semiconductor chip with a conductive adhesive layer including steps of: forming a conductive adhesive layer on back side of a wafer on which a semiconductor element is formed; laminating a flexible substrate on back side of the conductive adhesive layer; forming a dicing groove which... Agent: Renesas Electronics Corporation

20110057331 - Thermosetting die bonding film, dicing die bonding film and semiconductor device: An object of the present invention is to provide a thermosetting die-bonding film with which a die-bonding film is suitably broken with a tensile force. The object is achieved by a thermosetting die-bonding, film at least having an adhesive layer that is used to fix a semiconductor chip to an... Agent:

20110057333 - Method for the real-time monitoring of integrated circuit manufacture through localized monitoring structures in opc model space: The present disclosure relates to a method of controlling the manufacturing of integrated circuits, comprising steps of determining parameters that are characteristic of a curve of radiation intensity applied to a semiconductor wafer through a mask, in critical zones of structures to be formed on the wafer, for each of... Agent: Stmicroelectronics Rousset Sas

20110049457 - Non-volatile memory device including phase-change material: A non-volatile memory device including a phase-change material, which has a low operating voltage and low power consumption, includes a lower electrode; a phase-change material layer formed on the lower electrode so as to be electrically connected to the lower electrode, wherein the phase-change material layer includes a phase-change material... Agent:

20110049458 - Non-volatile memory device including phase-change material: A non-volatile memory device including a phase-change material, which has a low operating voltage and low power consumption, includes a lower electrode; a phase-change material layer formed on the lower electrode so as to be electrically connected to the lower electrode, wherein the phase-change material layer includes a phase-change material... Agent:

20110049459 - Non-volatile memory device including phase-change material: A non-volatile memory device includes a lower electrode, a phase-change material layer formed on the lower electrode so as to be electrically connected to the lower electrode, and an upper electrode formed on the phase-change material layer so as to be electrically connected to the phase-change material layer. The phase-change... Agent:

20110049456 - Phase change structure with composite doping for phase change memory: A memory device is described using a composite doped phase change material between a first electrode and a second electrode. A memory element of phase change material, such as a chalcogenide, is between the first and second electrodes and has an active region. The phase change material has a first... Agent:

20110049454 - Semiconductor device: In a phase-change memory, an interface layer is inserted between a chalcogenide material layer and a plug. The interface layer is arranged so as not to cover the entire interface of a plug-like electrode. When the plug is formed at an upper part than the chalcogenide layer, the degree of... Agent:

20110049455 - Wafer bonded access device for multi-layer phase change memory using lock-and-key alignment: A method for fabricating a multi-layer phase change memory device includes forming a phase change memory layer including a plurality of phase change memory elements on a word line formed on a plurality of semiconductor devices on a first semiconductor substrate, each phase change element having a notch formed at... Agent:

20110049461 - Chemical mechanical polishing stop layer for fully amorphous phase change memory pore cell: A method for fabricating a phase change memory pore cell that includes forming a bottom electrode, forming a first dielectric layer on the bottom electrode, forming a sacrificial layer on the first dielectric layer, forming an isolation layer on the sacrificial layer, and forming a second dielectric layer on the... Agent:

20110049460 - Single mask adder phase change memory element: A method of fabricating a phase change memory element within a semiconductor structure includes etching an opening to an upper surface of a bottom electrode, the opening being formed of a height equal to a height of a metal region at a same layer within the semiconductor structure, depositing phase... Agent:

20110049462 - Flat lower bottom electrode for phase change memory cell: A phase change memory cell having a flat lower bottom electrode and a method for fabricating the same. The method includes forming a dielectric layer over a substrate including an array of conductive contacts, patterning, a via having a low aspect ratio such that a depth of the via is... Agent:

20110049463 - Nonvolatile memory device and method of fabricating the same: A nonvolatile memory device includes: a substrate; a first electrode formed on the substrate; a resistance change layer formed on the first electrode, the resistance change layer containing conductive nano-material; a second electrode formed on the resistance change layer; and an insulating buffer layer disposed between the first electrode and... Agent:

20110049464 - Resistive random access memory device and memory array including the same: A resistive random access memory (RRAM) includes a resistive memory layer of a transition metal oxide, such as Ni oxide, and is doped with a metal material. The RRAM may include at least one first electrode, a resistive memory layer on the at least one first electrode, the resistive memory... Agent:

20110049466 - Large array of upward pointing p-i-n diodes having large and uniform current: A memory is provided that includes a first memory level having a plurality of memory cells. Each memory cell includes a vertically oriented p-i-n diode including a bottom heavily doped p-type region, a middle intrinsic or lightly doped region, and a top heavily doped n-type region. When a voltage between... Agent:

20110049465 - Semiconductor integrated circuit device and method of fabricating the same: A semiconductor integrated circuit device including: multiple wiring layers stacked on a semiconductor substrate with interlayer insulating films interposed therebetween; wiring hook-up portions extended from the corresponding wirings in the respective wiring layers; and contact conductors so buried in interlayer insulating films as to pass through the hook-up portions for... Agent:

20110049467 - Manufacturing method of metal oxide nanostructure and electronic element having the same: The manufacturing method of metal oxide nanostructure is advantageous in that the area and thickness of an amorphous layer can be controlled by controlling the flow rate of the main component of the amorphous layer and the flow rate of the main component of the single crystalline seed layer, thereby... Agent:

20110049470 - Diode having vertical structure and method of manufacturing the same: A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode.... Agent:

20110049471 - Efficient carrier injection in a semiconductor device: Semiconductor devices such as VCSELs, SELs, LEDs, and HBTs are manufactured to have a wide bandgap material near a narrow bandgap material. Electron injection is improved by an intermediate structure positioned between the wide bandgap material and the narrow bandgap material. The intermediate structure is an inflection, such as a... Agent:

20110049469 - Enhanced p-contacts for light emitting devices: where e−AFF is the electron affinity of the undoped tunneling enhancement layer. The undoped tunneling enhancement layer and the p-type Group III nitride layer comprise conduction and valence energy bands. The top of the valence band V1 of the undoped tunneling enhancement layer is above the top of the valence... Agent:

20110049468 - Led and led display and illumination devices: Light emitting chips, light emitting unit cells and methods of forming light emitting chips are provided. A light emitting chip includes a light emission structure having a p-type semiconductor layer, an n-type semiconductor layer, and an active layer therebetween. At least one light emitting unit is formed from the light... Agent:

20110049472 - Light emitting diode: A light emitting diode (LED) has an n-type semiconductor layer, an active layer, a p-type semiconductor layer, and a transparent electrode layer. The LED includes a tunnel layer interposed between the p-type semiconductor layer and the transparent electrode layer, an opening arranged in the transparent electrode layer so that the... Agent:

20110049473 - Film wrapped nfet nanowire: A semiconductor structure includes an n-channel field effect transistor (NFET) nanowire, the NFET nanowire comprising a film wrapping around a core of the NFET nanowire, the film wrapping configured to provide tensile stress in the NFET nanowire. A method of making a semiconductor structure includes growing a film wrapping around... Agent:

20110049476 - Impact ionization field-effect transistor: An Impact Ionization Field-Effect Transistor (I-MOS) device in which device degradation caused by hot carrier injection into a gate oxide is prevented. The device includes source, drain, and gate contacts, and a channel between the source and the drain. The channel has a dimension normal to the direction of a... Agent:

20110049475 - Solid state charge qubit device: This invention concerns a quantum device, suitable for quantum computing, based on dopant atoms located in a solid semiconductor or insulator substrate. In further aspects the device is scaled up. The invention also concerns methods of reading out from the devices, initializing them, using them to perform logic operations and... Agent:

20110049474 - Tunnel field effect devices: An indirectly induced tunnel emitter for a tunneling field effect transistor (TFET) structure includes an outer sheath that at least partially surrounds an elongated core element, the elongated core element formed from a first semiconductor material; an insulator layer disposed between the outer sheath and the core element; the outer... Agent:

20110049479 - Benzo[a]fluoranthene compound and organic light emitting device using the same: wherein X1 represents a substituted or unsubstituted phenylene group, or a substituted or unsubstituted, divalent monocyclic heterocyclic group, and Ar1 represents one of the following groups (a) and (b): (a) a substituted or unsubstituted fused polycyclic group, and (b) a composite substituent formed by combining two or more of a... Agent:

20110049477 - Electroactive materials: e

20110049478 - Electroactive materials:

20110049484 - Heteroarylamine compound and organic light-emitting device including the same: Embodiments of the present invention are directed to heteroarylamine compounds and organic light-emitting devices including the heteroarylamine compounds. The organic light-emitting devices using the heteroarylamine compounds have high-efficiency, low driving voltages, high luminance and long lifespans.... Agent:

20110049494 - Heteroarylamine compound and organic light-emitting device including the same: Embodiments of the present invention are directed to heteroarylamine compounds and organic light-emitting devices including the heteroarylamine compounds. The organic light-emitting devices using the heteroarylamine compounds have high-efficiency, low driving voltages, high luminance and long lifespans.... Agent:

20110049487 - Heteroarylamine compound and organic luminescence device using the same: Embodiments of the present invention are directed to heteroarylamine compounds and organic luminescence devices including the heteroarylamine compounds. The organic luminescence devices using the heteroarylamine compounds have high-efficiency, low driving voltages, high luminance and long lifetimes.... Agent:

20110049488 - Heterocyclic compound and organic light-emitting device including the same: Embodiments of the present invention are directed to heterocyclic compounds and organic light-emitting devices including the heterocyclic compounds. The organic light-emitting devices using the heterocyclic compounds have high-efficiency, low driving voltages, high luminance and long lifespans.... Agent:

20110049490 - Heterocyclic compound and organic light-emitting device including the same: Embodiments of the present invention are directed to heterocyclic compounds and organic light-emitting devices including the heterocyclic compounds. The organic light-emitting devices using the heterocyclic compounds have high-efficiency, low driving voltages, high luminance and long lifespans.... Agent:

20110049497 - Material for organic electroluminescence device and organic electroluminescence device: A material for an organic electroluminescence device, includes: an organic material that is to be provided for a film formation of any of at least one organic layer included in the organic electroluminescence device, the organic material having a water content before the film formation, as measured by the Karl... Agent:

20110049491 - Method for manufacturing a multi-layer stack structure with improved wvtr barrier property: A method and apparatus for manufacturing a multi-layer stack structure (12), the structure (12) comprising in order: a substrate (6a) a barrier layer (14) an adhesive layer (15) a barrier layer (14) a substrate (6b). The method comprises: a) providing two substrates (6a, 6b) in a single treatment space (5),... Agent:

20110049482 - Novel aromatic compound and organic electroluminescent element containing the same: A novel aromatic compound having an anthracene skeleton structure and an asymmetric molecular structure; and an organic electroluminescence device which comprises a cathode, an anode and an organic thin film layer comprising at least one layer containing a light emitting layer and sandwiched between the cathode and the anode in... Agent:

20110049481 - Optoelectronic device: An optoelectronic device including a first electrode, an active layer disposed on the first electrode, a second electrode disposed on the active layer, and a self-assembled monolayer interposed between the first electrode and the active layer, interposed between the active layer and the second electrode, or disposed inside the active... Agent:

20110049483 - Organic electroluminescence device: An organic electroluminescence device including opposite anode and cathode, and a hole-transporting region, an emitting layer and an electron-transporting region in sequential order from the anode between the anode and the cathode, wherein the emitting layer includes a red emitting portion, a green emitting portion, and a blue emitting portion;... Agent:

20110049496 - Organic electroluminescence device: An organic electroluminescence device material comprising a metal complex having a neopentyl group, for example, as shown below; and an organic electroluminescence device comprising a substrate having thereon a pair of electrodes and at least one organic layer between the electrodes, the organic layer containing a light emitting layer, wherein... Agent:

20110049498 - Organic electroluminescence device, method of manufacturing organic electroluminescence device, display apparatus and illumination apparatus: An organic electroluminescence device, having a pair of electrodes, and an organic layer containing multiple light emitting layers provided between a pair of electrodes, wherein at least one of the multiple light emitting layers is formed by coating a liquid containing ingredients to constitute the layer in a state of... Agent:

20110049493 - Organic light emitting diode lighting equipment: An organic light emitting diode lighting equipment includes a transparent substrate main body, a first electrode formed on the substrate main body, a subsidiary electrode formed on the first electrode to partition the first electrode at a predetermined distance, an organic emissive layer formed on the first electrode, and a... Agent:

20110049485 - Organic light-emitting device: Embodiments of the present invention are directed to a heterocyclic compound and an organic light-emitting device including the heterocyclic compound. The organic light-emitting devices using the heterocyclic compounds have high-efficiency, low driving voltages, high luminance and long lifespans.... Agent:

20110049486 - Organic light-emitting device: Embodiments of the present invention are directed to a heterocyclic compound and an organic light-emitting device including the heterocyclic compound. The organic light-emitting devices using the heterocyclic compounds have high-efficiency, low driving voltages, high brightness and long lifespans.... Agent:

20110049502 - Organic light-emitting display device and method of manufacturing the same: An organic light-emitting display device includes a substrate; a gate electrode disposed on the substrate, the gate electrode including a first portion of a metal oxide layer and a metal layer; a pixel electrode disposed on the substrate so as to be insulated from the gate electrode, the pixel electrode... Agent:

20110049480 - Organic semiconductor polymer and transistor including the same: An organic semiconductor polymer and transistor are provided, the organic semiconductor polymer is represented by the following Chemical Formula (1)... Agent:

20110049504 - Photoelectric conversion element: A photoelectric conversion element including an anode, a cathode, an active layer formed between the anode and the cathode, and a functional layer formed between the active layer and the cathode, wherein the functional layer is formed by application of a dispersion liquid containing titanium dioxide particles dispersed therein.... Agent:

20110049492 - Photoelectric conversion element and imaging device: A photoelectric conversion element includes, in the following order: a substrate; a lower electrode containing titanium nitride; an organic layer including a photoelectric conversion layer; and an upper electrode containing a transparent electrode material.... Agent:

20110049495 - Quinoxaline derivatives and organic light-emitting diodes comprising the same: p

20110049503 - Semiconductor device and method for manufacturing the same: A semiconductor device includes a substrate, a low dielectric constant layer formed on the substrate, a first protection insulating layer formed on the low dielectric constant layer, and a trench with an interconnect embedded in formed in the first protection insulating layer and the low dielectric constant layer. The sidewall... Agent:

20110049489 - Top-gate bottom-contact organic transistor: Top-gate, bottom-contact organic thin film transistors are provided. The transistors may include metal bilayer electrodes to aid in charge movement within the device. In an embodiment, an organic transistor includes a drain electrode and a source electrode disposed over a first region of a substrate, a transition metal oxide layer... Agent:

20110049499 - Transition metal complexes comprising carbene ligands serving as emitters for organic light-emitting diodes (oled's): p

20110049500 - Transition metal complexes comprising carbene ligands serving as emitters for organic light-emitting diodes (oled's):

20110049501 - Transition metal complexes comprising carbene ligands serving as emitters for organic light-emitting diodes (oled's):

20110049505 - Devices and method for manufacturing a device: A device includes a first semiconductor chip and a second semiconductor chip which are connected to each other in an electrically conductive manner via a bonding wire, the bonding wire having a contact to the first semiconductor chip at a first contact point and having a contact to the second... Agent:

20110049510 - Display device and method for manufacturing the same: An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which... Agent:

20110049511 - Field effect transistor, semiconductor device and semiconductor device manufacturing method: A field effect transistor including a source electrode 107a, a drain electrode 107b, a gate electrode 103, an insulating film 105 and a semiconductor layer 109 containing a crystalline oxide, wherein the source electrode 107a and the drain electrode 107b are self-aligned with the gate electrode 103 with the insulating... Agent:

20110049512 - Method for developing thin film from oxide or silicate of hafnium nitride, coordination compound used in said method, and method for producing integrated electronic circuit: The invention provides a method for developing a thin film from oxide or silicate of hafnium nitride, and also provides asymmetric guanidinate coordinate compounds. The invention furthermore provides a method for producing an electronic circuit that includes a step for developing a thin film from oxide or silicate of hafnium... Agent:

20110049507 - Organic light emitting diode display and method of manufacturing the same: A display and a method of manufacturing the same, the display including a substrate main body, a first thin film transistor on the substrate main body, the first thin film transistor including a first gate electrode, the first gate electrode including polycrystalline silicon, a first semiconductor layer on the first... Agent:

20110049506 - Stable p-type semiconducting behaviour in li and ni codoped zno: A method is provided for growing a stable p-type ZnO thin film with low resistivity and high mobility. The method includes providing an n-type Li—Ni co-doped ZnO target in a chamber, providing a substrate in the chamber, and ablating the target to form the thin film on the substrate.... Agent:

20110049508 - Thin film transistor and method for manufacturing the same: In a manufacturing method for thin film transistors, the following procedure is taken: a sacrifice layer comprised of a metal oxide semiconductor is formed over a conductive layer comprised of a metal oxide semiconductor; a metal film is formed over the sacrifice layer; the metal film is processed by dry... Agent:

20110049509 - Thin film transistor, display device using thin film transistor, and production method of thin film transistor: Provided is a thin film transistor including: a first gate electrode; a first gate insulating layer covering the first gate electrode; a semiconductor layer on the first gate insulating layer; a second gate insulating layer on the semiconductor layer; a second gate electrode on the second gate insulating layer; and... Agent:

20110049515 - Chip structure with bumps and testing pads: A chip structure comprising a silicon substrate, a MOS device, dielectric layers, a metallization structure, a passivation layer, a plurality of metal layers and a polymer layer. The metallization structure comprises a first circuit layer and a second circuit layer over the first circuit layer, and comprises a damascene electroplated... Agent:

20110049516 - Multi-project wafer and method of making same: A semiconductor wafer is fabricated. The wafer has a plurality of dies. The plurality of dies include at least operable dies of a first type and operable dies of a second type different from the first type. The dies of the second type are rendered inoperable, while keeping the dies... Agent:

20110049513 - Semiconductor device having multilayer wiring structure and method of fabricating the same: According to one embodiment, a semiconductor device having a multilayer wiring structure includes a function block and a test pad. The function block contains a DFT circuit. The test pad is formed in an intermediate wiring layer, and connected to the DFT circuit of the function block. A functional operation... Agent:

20110049514 - Tcp type semiconductor device: A TCP type semiconductor device includes a base film; a semiconductor chip mounted on the base film; and a plurality of leads formed on the base film and electrically connected with the semiconductor chip. Each of the plurality of leads has an external terminal portion exposed externally. The external terminal... Agent:

20110049517 - Bipolar transistor: A bipolar transistor has a collector having a base layer provided thereon and a shallow trench isolation structure formed therein. A base poly layer is provided on the shallow trench isolation structure. The shallow trench isolation structure defines a step such that a surface of the collector projects from the... Agent:

20110049518 - Semiconductor device including a transistor, and manufacturing method of semiconductor device: An object is to prevent contamination of a semiconductor film in a transistor or a semiconductor device including the transistor. Another object is to suppress variation in electrical characteristics and deterioration. A transistor including: a gate electrode layer provided over a substrate; a gate insulating film provided over the gate... Agent:

20110049519 - Thin film transistor array panel and method of manufacturing the same: A thin film transistor array panel includes an insulation substrate. A signal line is formed on the insulation substrate. A thin film transistor is connected to the signal line. A color filter is formed on the substrate. An organic insulator is formed on the color filter and includes a first... Agent:

20110049520 - Lattice matched crystalline substrates for cubic nitride semiconductor gr: Disclosed embodiments include methods of fabricating a semiconductor layer or device and devices fabricated thereby. The methods include, but are not limited to, providing a substrate having a cubic crystalline surface with a known lattice parameter and growing a cubic crystalline group III-nitride alloy layer on the cubic crystalline substrate... Agent:

20110049521 - Active device array mother substrate and method of fabricating display panel: An active device array mother substrate including a substrate, pixel arrays, and a polymer-stabilized alignment curing circuit is provided. The substrate has panel regions, a circuit region, a first cutting line, and a second cutting line. The first cutting line is disposed on the circuit region between an edge of... Agent:

20110049525 - Active matrix substrate, display device, television apparatus, manufacturing method of an active matrix substrate, and manufacturing method of a display device: An active matrix substrate includes: a plurality of pixel electrodes arranged in a matrix pattern and each forming a pixel; a plurality of gate lines each provided between the corresponding pixel electrodes and extending in parallel with each other; a plurality of first source lines each provided between the corresponding... Agent:

20110049524 - Display device and manufacturing method thereof: Provided is a display device including a thin-film transistor and a capacitor element, the thin-film transistor includes: a first insulating film (IN1) which is formed to cover an area where a gate electrode (GT) is formed; a second insulating film (IN2) which is formed on the first insulating film, the... Agent:

20110049523 - Organic light emitting diode display and method of manufacturing the same: An OLED display including a substrate main body; a first gate electrode and a second semiconductor layer; a gate insulating layer on the first gate electrode and the second semiconductor layer; a first semiconductor layer and a second gate electrode overlying the first gate electrode and the second semiconductor layer,... Agent:

20110049522 - Semiconductor display device: It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the... Agent:

20110049529 - Gan-based semiconductor element and method of manufacturing the same: In a GaN series semiconductor element that comprises an operating layer comprising a GaN series compound semiconductor, a gate insulating film that is formed on the operating layer, and a gate electrode that is formed on the gate insulating film, the gate insulating is a SiO2 film of which an... Agent:

20110049528 - Methods for fabricating compound material wafers: Reconditioned donor substrates that include a remainder substrate from a donor substrate wherein the remainder substrate has a detachment surface where a transfer layer was detached and an opposite surface; and an additional layer deposited upon the opposite surface of the remainder substrate to increase its thickness and to form... Agent:

20110049527 - Semiconductor device: A semiconductor device comprising: an active layer, which has a composition represented by the formula: AlxMyGa1-x-yN, wherein x satisfies 0≦x≦1, wherein y satisfies 0≦y≦1, wherein x+y satisfies 0≦x+y≦1, and wherein M contains at least one of In and B; a substrate containing GaN; and a buffer layer provided between the... Agent:

20110049526 - Semiconductor devices with field plates: A III-N device is described with a III-N material layer, an insulator layer on a surface of the III-N material layer, an etch stop layer on an opposite side of the insulator layer from the III-N material layer, and an electrode defining layer on an opposite side of the etch... Agent:

20110049531 - Power semiconductor device and manufacturing method for the same: Provided is a power semiconductor device including: an insulating substrate; a circuit pattern formed on an upper surface of the insulating substrate; a power semiconductor formed on the circuit pattern; a plurality of metal socket electrode terminals formed perpendicularly to the circuit pattern or the power semiconductor so as to... Agent:

20110049535 - Semiconductor apparatus: A semiconductor apparatus includes a first stacked body including a first radiator plate, a first insulating layer, a first conductive layer and a first semiconductor element in this order; a second stacked body including a second radiator plate, a second insulating layer, a second conductive layer and a second semiconductor... Agent:

20110049534 - Semiconductor device and method of manufacturing the same: In a semiconductor device and a method of manufacturing the same, a first insulation layer is removed from a cell area of a substrate and a first active pattern is formed on the first area by a laser-induced epitaxial growth (LEG) process. Residuals of the first insulation layer are passively... Agent:

20110049533 - Semiconductor device and production method thereof: A method of fabricating a semiconductor device is disclosed that is able to suppress a short channel effect and improve carrier mobility. In the method, trenches are formed in a silicon substrate corresponding to a source region and a drain region. When epitaxially growing p-type semiconductor mixed crystal layers to... Agent:

20110049532 - Silicon carbide dual-mesa static induction transistor: A dual-mesa static induction transistor (SIT) structure includes a silicon carbide substrate having a layer arrangement formed thereon. Laterally spaced ion implanted gate regions are defined in the layer arrangement. Source regions are defined in the layer arrangement. Each of the source regions can include a channel mesa having a... Agent:

20110049530 - Transistors with a gate insulation layer having a channel depleting interfacial charge and related fabrication methods: A metal-insulator-semiconductor field-effect transistor (MISFET) includes a SiC layer with source and drain regions of a first conductivity type spaced apart therein. A first gate insulation layer is on the SiC layer and has a net charge along an interface with the SiC layer that is the same polarity as... Agent:

20110049538 - Flip chip led die and array thereof: A flip chip LED die is provided and includes a first type doped layer, a second type doped layer, a first electrode layer, a second electrode layer and an insulation layer. The second type doped layer is disposed under the first type doped layer. The first electrode layer is disposed... Agent:

20110049537 - Light emitting device and light emitting device package having the same: Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a plurality of light emitting cells including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a first electrode layer connected to the first conductive... Agent:

20110049536 - Light emitting diode package and method for manufacturing same: An exemplary light emitting diode package includes a housing, and a light emitting unit received in the housing. The light emitting unit includes a first carbon nanotube layer, a plurality of spaced light emitting chips, and a second carbon nanotube layer. The light emitting chips are formed on the first... Agent:

20110049539 - Light-emitting diode with high color-rendering index: A light-emitting diode (LED) with high color-rendering index includes a substrate being provided on one face with a plurality of recesses; a plurality of first chips being separately disposed in the recesses and adapted to emit blue light; a plurality of fluorescent glues being separately filled in the recesses; at... Agent:

20110049542 - Alxga(1-x)as substrate, epitaxial wafer for infrared leds, infrared led, method of manufacturing alxga(1-x)as substrate, method of manufacturing epitaxial wafer for infrared leds, and method of manufacturing infrared leds: An AlxGa(1-x)As substrate (10a) of the present invention is an AlxGa(1-x)As substrate (10a) furnished with an AlxGa(1-x)As layer (11) having a major surface (11a) and, on the reverse side from the major surface (11a), a rear face (11b), and is characterized in that in the AlxGa(1-x)As layer (11), the amount... Agent:

20110049540 - Method for fabricating robust light-emitting diodes: One embodiment of the present invention provides a method for fabricating light-emitting diodes (LEDs). The method includes fabricating an InGaAlN-based multilayer LED structure on a conductive substrate. The method further includes etching grooves of a predetermined pattern through the active region of the multilayer LED structure. The grooves separate a... Agent:

20110049541 - Semiconductor light emitting device and method for manufacturing same: A semiconductor light emitting device, includes: a stacked structural unit including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided therebetween; and an electrode including a first and second metal layers, the first metal layer... Agent:

20110049543 - Light-emitting device and manufacturing method therof: Provides is a semiconductor light-emitting device. The semiconductor light-emitting device includes a first conduction-type cladding layer, an active layer, and a second conduction-type cladding layer, on a substrate. Portions of the substrate and the first conduction-type cladding layer are removed. According to the light-emitting device having the above-construction, damage to... Agent:

20110049544 - Nitride semiconductor element, methods for manufacturing nitride semiconductor element and nitride semiconductor layer, and nitride semiconductor light-emitting element: Described herein is a method for manufacturing a nitride semiconductor layer by stacking, on a silicon nitride layer, the first nitride semiconductor layer having a surface inclined with respect to the surface of the silicon nitride layer and then stacking the second nitride semiconductor layer on the first nitride semiconductor... Agent:

20110049546 - high reflectivity mirrors and method for making same: A composite high reflectivity mirror (CHRM) with at least one relatively smooth interior surface interface. The CHRM includes a composite portion, for example dielectric and metal layers, on a base element. At least one of the internal surfaces is polished to achieve a smooth interface. The polish can be performed... Agent:

20110049547 - Fabricating method and structure of a wafer level module: A fabricating method and structure form a wafer level module with a solid adhesive film. A first solid adhesive film includes a first release film and a second release film that respectively cover a first surface and a second surface of the first solid adhesive film. Openings are patterned through... Agent:

20110049551 - Illuminating device: A lighting device (1) comprises at least one element (2) emitting light which is at least in part visible, and at least one conversion medium (3), which converts at least part of the radiation emitted by the element (2) into radiation of another frequency. In addition, the lighting device (1)... Agent:

20110049545 - Led package with phosphor plate and reflective substrate: After flip chip LEDs are mounted on a submount wafer and their growth substrates removed, a phosphor plate is affixed to the exposed top surface of each LED. A reflective material, such as silicone containing at least 5% TiO2 powder, by weight, is then spun over or molded over the... Agent:

20110049553 - Light emitting device package: A light emitting device package is provided. The light emitting device package includes a substrate including a first cavity having a first depth and a lateral surface inclined with respect to a bottom surface and a second cavity having a second depth recessed from the bottom surface of the first... Agent:

20110049549 - Light emitting devices and methods of manufacturing the same: Light emitting devices and methods of manufacturing the light emitting devices. The light emitting devices include a silicon substrate; a metal buffer layer on the silicon substrate, a patterned dispersion Bragg reflection (DBR) layer on the metal buffer layer; and a nitride-based thin film layer on the patterned DBR layer... Agent:

20110049552 - Light emitting diode package: There is provided a light emitting diode (LED) package. The LED package includes A light emitting diode (LED) package includes a pair of lead frames connected with at least one LED chip through a metal wire, a package body integrally fixed with the lead frames and having a cavity having... Agent:

20110049555 - Optoelectronic semiconductor chip and method for producing same: An optoelectronic semiconductor chip has a semiconductor layer sequence having an active layer that generates radiation between a layer of a first conductivity type and a layer of a second conductivity type. The layer of the first conductivity type is adjacent to a front side of the semiconductor layer sequence.... Agent:

20110049554 - Package base structure and manufacturing method thereof: A package base structure for packaging a light-emitting element and a related manufacturing process are provided. The package base structure includes a semiconductor substrate having a top surface, a receiving space in the top surface and defined by slant surfaces, and a micro diffractive optical element on one of the... Agent:

20110049548 - Patterning method of metal oxide thin film using nanoimprinting, and manufacturing method of light emitting diode: A method for forming a metal oxide thin film pattern using nanoimprinting according to one embodiment of the present invention includes: coating a photosensitive metal-organic material precursor solution on a substrate; pressurizing the photosensitive metal-organic material precursor coating layer to a mold patterned to have a protrusion and depression structure;... Agent:

20110049550 - Semiconductor light emitting element and semiconductor light emitting device: A semiconductor light emitting element, includes: a laminated structure body including an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer; a p-side electrode provided in contact with the p-type semiconductor layer; an n-side electrode provided in contact with the n-type semiconductor layer; a highly reflective insulating... Agent:

20110049559 - Light-emitting diode lamp with low thermal resistance: A light-emitting diode (LED) structure with an improved heat transfer path with a lower thermal resistance than conventional LED lamps is provided. For some embodiments, a surface-mountable light-emitting diode structure is provided having an active layer deposited on a metal substrate directly bonded to a metal plate that is substantially... Agent:

20110049557 - Optical device and method of manufacturing the same: An optical device having following components is disclosed. A semiconductor substrate has an element region formed on its upper side. A light transmitting insulator film covers an element region and has at least one recessed portion located in a region outside the element region. At least one protruding portion is... Agent:

20110049558 - Semiconductor chip assembly with post/base heat spreader, signal post and cavity: A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace and an adhesive. The heat spreader includes a thermal post and a base. The conductive trace includes a pad, a terminal and a signal post. The semiconductor device extends into a cavity in the thermal post,... Agent:

20110049556 - Semiconductor light-emitting device and process for production thereof: The present invention provides a semiconductor light-emitting device capable of keeping high luminance intensity even if electric power increases, and hence the device is suitable for lighting instruments such as lights and lamps. This semiconductor device comprises a metal electrode layer provided with openings, and is so large in size... Agent:

20110049560 - Compositions and methods for generating white light: Crystalline inorganic-organic hybrid structures having a plurality of layers of a repeating unit characterized by a first organic ligand layer, a second organic ligand layer, and a two-dimensional semiconducting inorganic double layer having two opposing surfaces therebetween, wherein the two-dimentional semiconducting inorganic double layer is characterized by two single atom... Agent:

20110049561 - Solid-state pinch off thyristor circuits: Provided is a semiconductor bistable switching device that includes a thyristor portion including an anode layer, a drift layer, a gate layer and a cathode layer, the gate layer operable to receive a gate trigger current that, when the anode layer is positively biased relative to the cathode layer, causes... Agent:

20110049562 - Semiconductor device and method for manufacturing the same: A semiconductor device comprises: a semiconductor substrate; a plurality of IGBT cells on the semiconductor substrate, each of the IGBT cells including a gate electrode and a first emitter electrode; a first gate wiring on the substrate and being connected to the gate electrode; an interlayer insulating film covering the... Agent:

20110049563 - Mos gate power semiconductor device: A MOS-gate power semiconductor device is provided which includes: one or more P-type wells formed under one or more of a gate metal electrode and a gate bus line and electrically connected to an emitter metal electrode; and one or more N-type wells formed in the P-type well and electrically... Agent:

20110049564 - Integrated schottky diode in high voltage semiconductor device: This invention discloses a method for manufacturing a semiconductor power device in a semiconductor substrate comprises an active cell area and a termination area. The method comprises the steps of a) growing and patterning a field oxide layer in the termination area and also in the active cell area on... Agent:

20110049565 - Optoelectronic device and process for making same: The present invention discloses an optoelectronic device, comprising: a substrate made of a first material; a region in the substrate, the region being made of a second material different from the first material; and a photo diode formed in the region by ion implantation. The second material for example is... Agent:

20110049566 - Dual band photodetector: A dual band photodetector for detecting infrared and ultraviolet optical signals is disclosed. Aspects include homojunction and heterojunction detectors comprised of one or more of GaN, AlGaN, and InGaN. In one aspect ultraviolet/infrared dual-band detector is disclosed that is configured to simultaneously detect UV and IR.... Agent:

20110049567 - Bottle-neck recess in a semiconductor device: The present disclosure provides a method for fabricating a semiconductor device that includes providing a silicon substrate, forming a gate stack over the silicon substrate, performing a biased dry etching process to the substrate to remove a portion of the silicon substrate, thereby forming a recess region in the silicon... Agent:

20110049568 - Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication: Fabrication of monolithic lattice-mismatched semiconductor heterostructures with limited area regions having upper portions substantially exhausted of threading dislocations, as well as fabrication of semiconductor devices based on such lattice-mismatched heterostructures.... Agent:

20110049570 - Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device: Provided is an epitaxial substrate capable of achieving a semiconductor device that has excellent ohmic contact characteristics as well as satisfactory device characteristics. On a base substrate, a channel layer formed of a first group III nitride that contains at least Al and Ga and has a composition of Inx1Aly1Gaz1N... Agent:

20110049571 - Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device: Provided is an epitaxial substrate capable of achieving a semiconductor device that has excellent schottky contact characteristics as well as satisfactory device characteristics. On a base substrate, a channel layer formed of a first group III nitride that contains at least Al and Ga and has a composition of Inx1Aly1Gaz1N... Agent:

20110049569 - Semiconductor structure including a field modulation body and method for fabricating same: According to one embodiment, a semiconductor structure including an equipotential field modulation body comprises a trench surrounding an active region of a group III-V power device fabricated in the semiconductor structure, and the equipotential field modulation body formed in the trench and extending over a portion of the active region.... Agent:

20110049573 - Group iii nitride semiconductor wafer and group iii nitride semiconductor device: A group III nitride semiconductor device and a group III nitride semiconductor wafer are provided. The group III nitride semiconductor device has a channel layer comprising group III nitride-based semiconductor containing Al. The group III nitride semiconductor device can enhance the mobility of the two-dimensional electron gas and improve current... Agent:

20110049574 - Semiconductor device: A semiconductor device includes a first group III-V nitride semiconductor layer, a second group III-V nitride semiconductor layer having a larger band gap than the first group III-V nitride semiconductor layer and at least one ohmic electrode successively formed on a substrate. The ohmic electrode is formed so as to... Agent:

20110049572 - Semiconductor device and method for manufacturing of the same: The present invention provides a semiconductor device including: a base substrate; a semiconductor layer which is disposed on the base substrate and has a 2-Dimensional Electron Gas (2DEG) formed therewithin; a first ohmic electrode disposed on a central region of the semiconductor layer; a second ohmic electrode which is formed... Agent:

20110049575 - Semiconductor integrated circuit: Disclosed herein is a semiconductor integrated circuit, wherein a desired circuit is formed by combining and laying out a plurality of standard cells and connecting the cells together, of which the cell length, i.e., the gap between a pair of opposed sides, is standardized, the plurality of standard cells forming... Agent:

20110049576 - Homogenous cell array: A system for terminating a homogenous cell array is disclosed. A preferred embodiment comprises a plurality of homogenous cells arranged in rows and columns to form the homogenous cell array, wherein a first homogenous cell of each column is electrically differently connected than a rest of the homogenous cells of... Agent:

20110049577 - System comprising a semiconductor device and structure: A system includes a semiconductor device. The semiconductor device includes a first single crystal silicon layer comprising first transistors, first alignment marks, and at least one metal layer overlying the first single crystal silicon layer, wherein the at least one metal layer comprises copper or aluminum more than other materials;... Agent:

20110049578 - Electric component and method of manufacturing the electric component: According to one embodiment, an electric component includes: a first insulating layer formed on a first wire; a second wire and a functional element formed on the first insulating layer; a second insulating layer formed on the first insulating layer; and a connection wire that connects the second wire and... Agent:

20110049579 - Thin-film transistor based piezoelectric strain sensor and method: A piezoelectric strain sensor and method thereof for detecting strain, vibration, and/or pressure. The sensor incorporates a sequence of piezoelectric and semiconductor layers in a thin-film transistor structure. The thin-film transistor structure can be configured on a flexible substrate via a low-cost fabrication technique. The piezoelectric layer generates an electric... Agent:

20110049580 - Hybrid packaged gate controlled semiconductor switching device using gan mesfet: A hybrid packaged gate controlled semiconductor switching device (HPSD) has an insulated-gate transistor (IGT) made of a first semiconductor die and a rectifying-gate transistor (RGT) made of a second semiconductor die. The RGT gate and source are electrically connected to the IGT source and drain respectively. The HPSD includes a... Agent:

20110049581 - Semiconductor structure and method: A method for forming a structure on a surface of a semiconductor. The method includes: forming the material as a lower layer of the structure using a first deposition process to provide the lower layer with a first etch rate to a predetermined etchant; forming the upper layer of the... Agent:

20110049582 - Asymmetric source and drain stressor regions: A method forms a structure has a substrate having at least one semiconductor channel region, a gate dielectric on the upper surface of the substrate over the semiconductor channel region, and a gate conductor on the gate dielectric. Asymmetric sidewall spacers are located on the sidewalls of the gate conductor... Agent:

20110049586 - Device to detect and measure static electric charge: A device (10) to detect and measure static electric charge (q) on an object (100) being positioned in a distance (r.) from an input electrode (11) of the device (10) comprises at least one MOS field transistor (20). The input electrode (11) is connected with the gate electrode (21) of... Agent:

20110049585 - Maintaining integrity of a high-k gate stack by passivation using an oxygen plasma: In semiconductor devices, integrity of a titanium nitride material may be increased by exposing the material to an oxygen plasma after forming a thin silicon nitride-based material. The oxygen plasma may result in an additional passivation of any minute surface portions which may not be appropriately covered by the silicon... Agent:

20110049587 - Method of forming a germanium silicide layer, semiconductor device including the germanium silicide layer, and method of manufacturing the semiconductor device: Example embodiments relate to a method of forming a germanium (Ge) silicide layer, a semiconductor device including the Ge silicide layer, and a method of manufacturing the semiconductor device. A method of forming a Ge silicide layer according to example embodiments may include forming a metal layer including vanadium (V)... Agent:

20110049583 - Recessed contact for multi-gate fet optimizing series resistance: A transistor, which can be referred to as a multi-gate transistor or as a FinFET, includes a gate structure having a length, a width and a height. The transistor further includes at least one electrically conductive channel or fin between a source region and a drain region that passes through... Agent:

20110049584 - Semiconductor device: According to one embodiment, a semiconductor device, may include a semiconductor substrate including a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type different from the first conductivity type, the first semiconductor having a resistance value in a range from 100... Agent:

20110049588 - Semiconductor device and manufacturing method thereof: An object of an embodiment of the disclosed invention is to provide a semiconductor device including a photoelectric conversion element with excellent characteristics. An object of an embodiment of the disclosed invention is to provide a semiconductor device including a photoelectric conversion device with excellent characteristic through a simple process.... Agent:

20110049589 - Backside illuminated image sensor having capacitor on pixel region: A backside illuminated image sensor includes a semiconductor substrate having a front side and backside, a sensor element formed overlying the frontside of the semiconductor substrate, and a capacitor formed overlying the sensor element.... Agent:

20110049590 - Solid-state imaging device, manufacturing method thereof, and electronic apparatus: A solid-state imaging device that includes at least one pixel. The pixel includes a photodiode, a floating diffusion element in a region of the photodiode and a read out gate electrode at least partially surrounding the floating diffusion element in plan view.... Agent:

20110049591 - Solid-state imaging device, process of making solid state imaging device, digital still camera, digital video camera, mobile phone, and endoscope: A solid-state imaging device includes an array of pixels, each pixel includes: a pixel electrode; an organic layer; a counter electrode; a sealing layer; a color filter; a readout circuit; and a light-collecting unit as defined herein, the photoelectric layer contains an organic p type semiconductor and an organic n... Agent:

20110049592 - Nonvolatile memory cell and method of manufacturing the same: Provided are a nonvolatile memory cell and a method of manufacturing the same. The nonvolatile memory cell includes a memory transistor and a driver transistor. The memory transistor includes a semiconductor layer, a buffer layer, an organic ferroelectric layer, and a gate electrode, which are disposed on a substrate. The... Agent:

20110049593 - Semiconductor component: A semiconductor component comprising a semiconductor body, a channel zone in the semiconductor body, a channel control electrode adjacent to the channel zone, and a dielectric layer between the channel zone and the channel control electrode, wherein the dielectric layer has a relative dielectric constant εr with a negative temperature... Agent:

20110049595 - Method for forming memory cell transistor: A method for forming a memory cell transistor is disclosed which includes providing a substrate, forming a trench structure in the substrate, depositing a conductive substance on the surface of the substrate to form a conductive member inside the trench structure, forming one or more dielectric layers on the surface... Agent:

20110049596 - Semiconductor device having impurity doped polycrystalline layer including impurity diffusion prevention layer and dynamic random memory device including the semiconductor device: Provided are semiconductor devices including a semiconductor substrate, an insulating layer including a contact hole through which the semiconductor substrate is exposed, and a polysilicon layer filling the contact hole. The polysilicon layer is doped with impurities and includes an impurity-diffusion prevention layer. In the semiconductor devices, the impurities included... Agent:

20110049594 - Silicon-on-insulator substrate with built-in substrate junction: A method of forming a SOI substrate, diodes in the SOI substrate and electronic devices in the SOI substrate and an electronic device formed using the SOI substrate. The method of forming the SOI substrate includes forming an oxide layer on a silicon first substrate; ion-implanting hydrogen through the oxide... Agent:

20110049597 - Non-volatile memory device: A non-volatile memory device including two or more capacitors having different sizes formed in separated regions and operating at a low voltage, the non-volatile memory device including: a conductive semiconductor substrate formed of a first conductive material; a conductive separation layer provided on at least one portion of the first... Agent:

20110049598 - Manufacturing method of flexible semiconductor device and flexible semiconductor device: A layered film of a three-layer clad foil formed with a first metal layer 23, a second metal layer 25, and an inorganic insulating layer 35 interposed therebetween is prepared. After the second metal layer 25 is partially etched to form a gate electrode 20g, the first metal layer 23... Agent:

20110049599 - Semiconductor device: In Trench-Gate Fin-FET, in order that the advantage which is exerted in Fin-FET can be sufficiently taken even if a transistor becomes finer and, at the same time, decreasing of on-current can be suppressed by saving a sufficiently large contact area in the active region, a fin width 162 of... Agent:

20110049600 - Semiconductor device and method of manufacturing the same: In a method of manufacturing a semiconductor device, first contact holes reaching diffusion regions of a cell transistor, bit line contact holes reaching diffusion regions of the cell transistor, and interconnect grooves communicating with the bit line contact holes are buried in a first insulating film. In addition, first contact... Agent:

20110049601 - Semiconductor device and method of manufacturing the same: According to one embodiment, a semiconductor device includes a substrate, conductive members, an interlayer insulating film, and a plurality of contacts. The conductive members are provided in an upper portion of the substrate or above the substrate to extend in one direction. The interlayer insulating film is provided on the... Agent:

20110049602 - Non-volatile memory semiconductor device and manufacturing method thereof: A gate insulating film layer, a floating gate electrode layer, an interelectrode insulating film layer, and a control gate electrode layer are stacked on a silicon substrate, and the control gate electrode film layer is etched to form a plurality of the control gate electrodes having the same width with... Agent:

20110049604 - Nonvolatile semiconductor memory device: According to one embodiment, a nonvolatile semiconductor memory device includes: a semiconductor substrate; an element isolation insulator formed in an upper portion of the semiconductor substrate and dividing the upper portion into first and second active areas extending in a first direction; a first contact connected to the first active... Agent:

20110049603 - Reverse disturb immune asymmetrical sidewall floating gate devices and methods: Circuits and methods for providing a floating gate structure comprising floating gate cells having improved reverse tunnel disturb immunity. A floating gate structure is formed over a semiconductor substrate comprising a floating gate, a charge trapping dielectric layer is formed, and a control gate is formed. The floating gate structure... Agent:

20110049605 - Split gate nonvolatile semiconductor storage device and method of manufacturing split gate nonvolatile semiconductor storage device: A split gate nonvolatile semiconductor storage device includes: a substrate; a floating gate; a control gate; a first source/drain diffusion layer; a second source/drain diffusion layer; and a silicide. The floating gate is formed on the substrate through a gate insulating film. The control gate is formed adjacent to the... Agent:

20110049606 - Charge-trap based memory: Methods of fabricating 3D charge-trap memory cells are described, along with apparatus and systems that include them. In a planar stack formed by alternate layers of electrically conductive and insulating material, a substantially vertical opening may be formed. Inside the vertical opening a substantially vertical structure may be formed that... Agent:

20110049610 - Nonvolatile memory device and method of forming the same: Provided are a nonvolatile memory device and a method of forming the same. The nonvolatile memory device includes: a semiconductor substrate including a device isolation layer defining an active region; a tunnel insulating layer on the active region; a charge trapping layer on the tunnel insulating layer; a blocking insulating... Agent:

20110049608 - Nonvolatile semiconductor memory device and method of manufacturing the same: A memory string comprises: a first semiconductor layer including a columnar portion extending in a stacking direction on a substrate; a first charge storage layer surrounding the columnar portion; and a plurality of first conductive layers stacked on the substrate so as to surround the first charge storage layer. A... Agent:

20110049609 - Nonvolatile semiconductor memory device and method of manufacturing the same: A nonvolatile semiconductor memory device has: a first source/drain diffusion region; a second source/drain diffusion region; a channel region between the first source/drain diffusion region and the second source/drain diffusion region; a first charge storage layer formed on the channel region; a second charge storage layer formed in a same... Agent:

20110049607 - Semiconductor device manufacturing method and semiconductor device: A semiconductor device manufacturing method includes: alternately stacking a plurality of insulating layers and electrode layers; forming a hole penetrating through a multilayer body of the insulating layers and the electrode layers; forming a conductive film on an inner wall of the hole; anisotropically etching the conductive film to selectively... Agent:

20110049612 - Nonvolatile semiconductor memory device and manufacturing method thereof: According to one embodiment, a nonvolatile semiconductor memory device including a semiconductor layer with a main surface, a first insulating layer formed on the main surface of the semiconductor layer, a charge storage layer formed on the first insulating layer, a second insulating layer formed on the charge storage layer,... Agent:

20110049611 - Nonvolatile semiconductor storage device and manufacturing method of nonvolatile semiconductor storage device: In a memory cell portion, a stacked structure, in which dielectric layers and semiconductor layers are alternately stacked, is arranged in a fin shape on a semiconductor substrate, and in a peripheral circuit portion, a gate electrode is arranged on the semiconductor substrate via a gate dielectric film so that... Agent:

20110049613 - Accumulation type finfet, circuits and fabrication method thereof: A FinFET includes a substrate and a fin structure on the substrate. The fin structure includes a channel between a source and a drain, wherein the source, the drain, and the channel have the first type dopant. The channel includes a Ge, SiGe, or III-V semiconductor. A gate dielectric layer... Agent:

20110049614 - Super junction trench power mosfet devices: In a super junction trench power MOSFET (metal oxide semiconductor field effect transistor) device, a column of p-type dopant in the super junction is separated from a first column of n-type dopant by a first column of oxide and from a second column of n-type dopant by a second column... Agent:

20110049615 - Power semiconductor device: According to one embodiment, a power semiconductor device includes a second semiconductor layer of a first conductivity type and a third semiconductor layer of a second conductivity type periodically disposed repeatedly along a surface of the first semiconductor layer on a first semiconductor layer of the first conductivity type. A... Agent:

20110049617 - Semiconductor device: A semiconductor device is provided. The semiconductor device includes a substrate and a plurality of material layers. The substrate includes a concave portion having a bottom surface and a side surface, and a protruded portion extended from the side surface. The plurality of material layers have flat portions on the... Agent:

20110049616 - Semiconductor structure for a power device and corresponding manufacturing process: An embodiment of a semiconductor structure for a power device integrated on a semiconductor substrate, of a first type of conductivity, and comprising:—an epitaxial layer, of said first type of conductivity, made on said semiconductor substrate, and having a plurality of column structures, of a second type of conductivity, to... Agent:

20110049618 - Fabrication of trench dmos device having thick bottom shielding oxide: Semiconductor device fabrication method and devices are disclosed. A device may be fabricated by forming in a semiconductor layer; filling the trench with an insulating material; removing selected portions of the insulating material leaving a portion of the insulating material in a bottom portion of the trench; forming one or... Agent:

20110049619 - Semiconductor device and method for manufacturing the same: A semiconductor device and a method for manufacturing the same are disclosed. The method for manufacturing the semiconductor device forms a recess gate region on a semiconductor substrate, forms an isolation layer isolated from the recess gate region using a high-temperature thermal process, and guarantees a larger channel region by... Agent:

20110049620 - Method for fabricating a mos transistor with source/well heterojunction and related structure: According to an exemplary embodiment, a method for fabricating a MOS transistor, such as an LDMOS transistor, includes forming a gate stack over a well. The method further includes forming a recess in the well adjacent to a first sidewall of the gate stack. The method further includes forming a... Agent:

20110049621 - Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same: An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped... Agent:

20110049622 - Semiconductor device and method of manufacturing the same: A semiconductor device has an insulating film and an n-type buried layer. The insulating film is formed in a flat-shaped cavity formed inside a p-type semiconductor substrate and in a trench extending from a surface of the semiconductor substrate to the cavity. The buried layer is formed in surrounding regions... Agent:

20110049623 - Short channel lateral mosfet and method: A short channel Lateral MOSFET (LMOS) and method are disclosed with interpenetrating drain-body protrusions (IDBP) for reducing channel-on resistance while maintaining high punch-through voltage. The LMOS includes lower device bulk layer; upper source and upper drain region both located atop lower device bulk layer; both upper source and upper drain... Agent:

20110049626 - Asymmetric embedded silicon germanium field effect transistor: A semiconductor device, an integrated circuit, and method for fabricating the same are disclosed. The semiconductor device includes a gate stack formed on an active region of a silicon-on-insulator substrate. A gate spacer is formed over the gate stack. A source region that includes embedded silicon germanium is formed within... Agent:

20110049625 - Asymmetrical transistor device and method of fabrication: Embodiments of the invention provide an asymmetrical transistor device comprising a semiconductor substrate, a source region, a drain region and a channel region. The channel region is provided between the source and drain regions, the source, drain and channel regions being provided in the substrate. The device has a layer... Agent:

20110049627 - Embedded silicon germanium n-type filed effect transistor for reduced floating body effect: A method for fabricating a semiconductor device includes forming a gate stack on an active region of a silicon-on-insulator substrate. The active region is within a semiconductor layer and is doped with an p-type dopant. A gate spacer is formed surrounding the gate stack. A first trench is formed in... Agent:

20110049624 - Mosfet on silicon-on-insulator redx with asymmetric source-drain contacts: A semiconductor device is disclosed that includes a silicon-on-insulator substrate including a buried insulator layer and an overlying semiconductor layer. Source extension and drain extension regions are formed in the semiconductor layer. A deep drain region and a deep source region are formed in the semiconductor layer. A first metal-semiconductor... Agent:

20110049628 - Semiconductor device, method for fabricating the same, and plasma doping system: A fin-semiconductor region (13) is formed on a substrate (11). A first impurity which produces a donor level or an acceptor level in a semiconductor is introduced in an upper portion and side portions of the fin-semiconductor region (13), and oxygen or nitrogen is further introduced as a second impurity... Agent:

20110049629 - Semiconductor device and method of manufacturing the same: To provide a technique capable of achieving improvement of the parasitic resistance in FINFETs. In the FINFET in the present invention, a sidewall is formed of a laminated film. Specifically, the sidewall is composed of a first silicon oxide film, a silicon nitride film formed over the first silicon oxide... Agent:

20110049631 - Semiconductor integrated circuit having insulated gate field effect transistors: In one embodiment, a semiconductor integrated circuit is provided a first well region, a second well region, a first body bias supply unit and a second body bias supply unit. The first well region includes a first transistor having a first threshold voltage. The second well region includes a second... Agent:

20110049630 - Stressed source/drain cmos and method of forming same: A complementary metal-oxide semiconductor (CMOS) structure includes a substrate and a P-type field effect transistor (FET) and an N-type FET disposed adjacent to one another on the substrate. Each FET includes a silicon-on-insulator (SOI) region, a gate electrode disposed on the SOI region, a source stressor, and a drain stressor... Agent:

20110049632 - Semiconductor device: A semiconductor device capable of dissipating heat, which has been produced in an ESD protection element, to the exterior of the device rapidly and efficiently includes an ESD protection element having a drain region, a source region and a gate electrode, and a thermal diffusion portion. The thermal diffusion portion,... Agent:

20110049633 - Light emitting device, method for manufacturing thereof and electronic appliance: An object of the invention is to provide a method for manufacturing a light emitting device capable of reducing deterioration of elements due to electrostatic charge caused in manufacturing the light emitting device. Another object of the invention is to provide a light emitting device in which defects due to... Agent:

20110049634 - Method of manufacturing a semiconductor device and semiconductor device: A method of manufacturing a semiconductor device having gate electrodes of a suitable work function material is disclosed. The method comprises providing a substrate (100) including a number of active regions (110, 120) and a dielectric layer (130) covering the active regions (110, 120), and forming a stack of layers... Agent:

20110049637 - Buried etch stop layer in trench isolation structures for superior surface planarity in densely packed semiconductor devices: Material erosion of trench isolation structures in advanced semiconductor devices may be reduced by incorporating an appropriate mask layer stack in an early manufacturing stage. For example, a silicon nitride material may be incorporated as a buried etch stop layer prior to a sequence for patterning active regions and forming... Agent:

20110049635 - Handshake structure for improving layout density: A semiconductor device includes a gate on a semiconductor substrate. One side wall of the gate may include at least one protrusion and an opposite side wall of the gate may include at least one depression. A contact is formed through an insulating layer disposed over the gate. The contact... Agent:

20110049639 - Integrated circuit manufacturing method and integrated circuit: A method is disclosed of manufacturing an integrated circuit. The method comprises providing a substrate (100) comprising a source region (102) and a drain region (104) separated by a channel region (106, 406), said channel region being covered by a gate stack separated from the channel region by a dielectric... Agent:

20110049636 - Semiconductor memory device and method of manufacturing the same: In one embodiment, a semiconductor memory device includes a semiconductor substrate, and isolation layers formed in a surface of the semiconductor substrate, and separating the semiconductor substrate into active areas, the isolation layers and the active areas being alternately arranged along a predetermined direction parallel to the surface of the... Agent:

20110049638 - Structure for high voltage device and corresponding integration process: An embodiment of a structure for a high voltage device of the type which comprises at least a semiconductor substrate being covered by an epitaxial layer of a first type of conductivity, wherein a plurality of column structures are realized, which column structures comprises high aspect ratio deep trenches, said... Agent:

20110049641 - Stress adjustment in stressed dielectric materials of semiconductor devices by stress relaxation based on radiation: In sophisticated semiconductor devices, an efficient adjustment of an intrinsic stress level of dielectric materials, such as contact etch stop layers, may be accomplished by selectively exposing the dielectric material to radiation, such as ultraviolet radiation. Consequently, different stress levels may be efficiently obtained without requiring sophisticated stress relaxation processes... Agent:

20110049640 - Superior fill conditions in a replacement gate approach by using a tensile stressed overlayer: In a replacement gate approach for forming high-k metal gate electrodes in semiconductor devices, a tapered configuration of the gate openings may be accomplished by using a tensile stressed dielectric material provided laterally adjacent to the gate electrode structure. Consequently, superior deposition conditions may be achieved while the tensile stress... Agent:

20110049642 - Work function adjustment in high-k gate stacks including gate dielectrics of different thickness: In sophisticated manufacturing techniques, the work function and thus the threshold voltage of transistor elements may be adjusted in an early manufacturing stage by providing a work function adjusting species within the high-k dielectric material with substantially the same spatial distribution in the gate dielectric materials of different thickness. After... Agent:

20110049644 - Fabrication method of semiconductor device: A fabrication method of a semiconductor device includes: forming a gate insulating film and a gate electrode on an N type well; forming first source/drain regions by implanting a first element in regions of the N type well on both sides of the gate electrode, the first element being larger... Agent:

20110049643 - Semiconductor device and method of manufacturing the same: According to one embodiment, a method of manufacturing a semiconductor device including forming a gate structure includes a metal gate electrode on a semiconductor substrate, forming two first sidewalls of an insulating material on both side surfaces of the gate structure, introducing impurity into the semiconductor substrate using the first... Agent:

20110049646 - Semiconductor device and method of forming the same: Methods of forming a semiconductor device include forming an insulation layer on a semiconductor structure, forming an opening in the insulation layer, the opening having a sidewall defined by one side of the insulation layer, forming a first metal layer in the opening, at least partially exposing the sidewall of... Agent:

20110049645 - Structure with reduced fringe capacitance: A structure includes a substrate and a gate stack disposed on the substrate. The structure also includes a nitride encapsulation layer disposed on a side wall of the gate stack and which has been exposed to a plasma source. The structure also includes at least one other element contacting the... Agent:

20110049647 - Method and apparatus for tunable electrical conductivity: An embodiment relates a method comprising creating a reversible change in an electrical property by adsorption of a gas by a composition, wherein the composition comprises a noble metal-containing nanoparticle and a single walled carbon nanotube. Another embodiment relates to a method comprising forming a composition comprising a noble metal-containing... Agent:

20110049650 - Electro-mechanical transistor: An electromechanical transistor includes a source electrode and a drain electrode spaced apart from each other. A source pillar is between the substrate and the source electrode. A drain pillar is between the substrate and the drain electrode. A moveable channel is spaced apart from the source electrode and the... Agent:

20110049649 - Integrated circuit switches, design structure and methods of fabricating the same: Integrated MEMS switches, design structures and methods of fabricating such switches are provided. The method includes forming at least one tab of sacrificial material on a side of a switching device which is embedded in the sacrificial material. The method further includes stripping the sacrificial material through at least one... Agent:

20110049648 - Mems device with stress isolation and method of fabrication: A MEMS device (20) with stress isolation includes elements (28, 30, 32) formed in a first structural layer (24) and elements (68, 70) formed in a second structural layer (26), with the layer (26) being spaced apart from the first structural layer (24). Fabrication methodology (80) entails forming (92, 94,... Agent:

20110049653 - Mems sensor, electronic device, and method of manufacturing mems sensor: An MEMS sensor includes: a fixation frame section; a movable weight section coupled to the fixation frame section via an elastically deformable section; a fixed electrode section extending from the fixation frame section toward the movable weight section; a movable electrode section extending from the movable weight section toward the... Agent:

20110049652 - Method and system for mems devices: A micro electro-mechanical (MEMS) device assembly is provided. The MEMS device assembly includes a first substrate that has a plurality of electronic devices, a plurality of first bonding regions, and a plurality of second bonding regions. The MEMS device assembly also includes a second substrate that is bonded to the... Agent:

20110049651 - Three-dimensional mems structure and method of manufacturing the same: Provided are a three-dimensional (3D) MEMS structure and a method of manufacturing the same. The method of manufacturing the 3D MEMS structure having a floating structure includes depositing a first etch mask on a substrate, etching at least two regions of the first etch mask to expose the substrate, and... Agent:

20110049654 - Magnetic tunnel junction device and fabrication: A magnetic tunnel junction (MTJ) device and fabrication method is disclosed. In a particular embodiment, a method of forming a magnetic tunnel junction (MTJ) device includes forming an MTJ cap layer on an MTJ structure and forming a top electrode layer over the MTJ cap layer. The top electrode layer... Agent:

20110049656 - Magnetic tunnel junction device and fabrication: A magnetic tunnel junction (MTJ) device and fabrication method is disclosed. In a particular embodiment, a method of forming a magnetic tunnel junction (MTJ) device includes forming a top electrode layer over an MTJ structure. The top electrode layer includes a first nitrified metal.... Agent:

20110049658 - Magnetic tunnel junction with electronically reflective insulative spacer: Magnetic tunnel junctions having a specular insulative spacer are disclosed. The magnetic tunnel junction includes a free magnetic layer, a reference magnetic layer, an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the reference magnetic layer, and an electrically insulating and electronically reflective layer positioned... Agent:

20110049659 - Magnetization control method, information storage method, information storage element, and magnetic function element: The present invention provides a magnetization control method controlling, utilizing no current-induced magnetic field or spin transfer torque a magnetization direction with low power consumption, an information storage method, an information storage element, and a magnetic function element. The magnetization control method involves controlling a magnetization direction of a magnetic... Agent:

20110049655 - Pillar-based interconnects for magnetoresistive random access memory: A semiconductor device includes a substrate including an M2 patterned area. A VA pillar structure is formed over the M2 patterned area. The VA pillar structure includes a substractively patterned metal layer. The VA pillar structure is a sub-lithographic contact. An MTJ stack is formed over the oxide layer and... Agent:

20110049657 - Semiconductor device and method of manufacturing the same: There are provided a semiconductor device in which short circuit failures in magnetic resistor elements and the like are reduced, and a method of manufacturing the same. An interlayer insulating film in which memory cells are formed is formed such that the upper surface of the portion of the interlayer... Agent:

20110049661 - Solid-state imaging device and process of making solid state imaging device: A solid state imaging device includes an array of pixels, each of the pixels includes: a pixel electrode; an organic layer; a counter electrode; a sealing layer; a color filter; and a readout circuit as defined herein, the photoelectric layer contains an organic p type semiconductor and an organic n... Agent:

20110049660 - Waveguide photo-detector: Provided is a waveguide photodetector that may improve an operation speed and increase or maximize productivity. The waveguide photodetector includes a waveguide layer extending in a first direction, an absorption layer disposed on the waveguide layer, a first electrode disposed on the absorption layer, a second electrode disposed on the... Agent:

20110049662 - Semiconductor device with optical sensor and method of forming interconnect structure on front and backside of the device: A semiconductor device includes a carrier and semiconductor die having an optically active region. The semiconductor die is mounted to the carrier to form a separation between the carrier and the semiconductor die. The semiconductor device further includes a passivation layer disposed over a surface of the semiconductor die and... Agent:

20110049663 - Structure of photodiode array: A structure of photodiode array includes a first electrode on which a plurality of second electrodes is arranged in a spaced manner forming an array and a plurality of isolation sections, which is each formed between adjacent ones of the spaced and arrayed second electrodes, whereby in carrying out tests... Agent:

20110049664 - Epitaxial substrate for back-illuminated image sensor and manufacturing method thereof: Provided is an epitaxial substrate for a back-illuminated image sensor and a manufacturing method thereof that is capable of suppressing metal contaminations and reducing occurrence of a white spot defect of the image sensor, by maintaining a sufficient gettering performance in a device process. The present invention includes forming a... Agent:

20110049665 - Image pickup device and image pickup apparatus: An image pickup device includes a plurality of first electrodes, a second electrode, a third electrode, a photoelectric conversion layer, a plurality of signal reading portions, at least one of electric potential adjusting portions. The plurality of first electrodes is arranged on an upper side of a substrate in two... Agent:

20110049666 - Guard ring structures and method of fabricating thereof: A guard ring structure for use in a semiconductor device. The guard ring structure includes a semiconductor layer stack having a first layer and a second layer on top of the first layer, gates structures formed in the first layer; and guard rings formed in the first layer. The second... Agent:

20110049667 - Semiconductor component with dielectric layer stack: A semiconductor component has a semiconductor body zone, a first electrically conductive layer adjacent to the semiconductor body zone, a first dielectric layer with first dielectric properties and a second dielectric layer with second dielectric properties. The first dielectric properties differ from the second dielectric properties. The first dielectric layer... Agent:

20110049668 - Deep trench isolation structures between high voltage semiconductor devices and fabrication methods thereof: Deep trench isolation structures between high voltage semiconductor devices and fabrication methods thereof are presented. The high voltage semiconductor device includes a semiconductor substrate, pluralities of intersecting deep trench isolation structures defining several high voltage semiconductor device regions, and an island at the center of the intersection between the two... Agent:

20110049669 - Method for forming isolation layer of semiconductor device: A method for forming an isolation layer of a semiconductor device includes forming a trench in a substrate, forming a high-density plasma (HDP) oxide layer filling a portion of the trench, forming a spin-on-dielectric (SOD) oxide layer having a certain height over the HDP oxide layer, performing a thermal treatment,... Agent:

20110049670 - Semiconductor device including fuse having form of capacitor: A semiconductor device includes a fuse having the form of a capacitor. The semiconductor device includes a cathode formed on a semiconductor substrate, an anode formed over the cathode, and at least one filament having a cylindrical-shell shape formed between the cathode and the anode and electrically connecting the cathode... Agent:

20110049671 - Bonding pad structure and integrated circuit chip using such bonding pad structure: An integrated circuit chip includes a substrate; a topmost metal layer over the substrate; a lower metal layer on or over the substrate and lower than the topmost metal layer; and at least one bonding pad in the lower metal layer.... Agent:

20110049672 - Semiconductor device: A semiconductor device has: a signal pad; a power supply line; a ground line; an inductor section whose one end is connected to the signal pad; a terminating resistor connected between the other end of the inductor section and the power supply line or the ground line. The semiconductor device... Agent:

20110049674 - Interdigitated vertical parallel capacitor: An interdigitated structure may include at least one first metal line, at least one second metal line parallel to the at least one first metal line and separated from the at least one first metal line, and a third metal line contacting ends of the at least one first metal... Agent:

20110049675 - Method of manufacturing semiconductor device and semiconductor device: A semiconductor device includes a capacitor provided above a substrate including electrodes and a ferroelectric film provided therebetween, a pad electrode electrically connected to one of the electrodes of the capacitor, the pad electrode being formed above the substrate, the pad electrode having a recess on a surface of the... Agent:

20110049673 - Nanopillar decoupling capacitor: Techniques for incorporating nanotechnology into decoupling capacitor designs are provided. In one aspect, a decoupling capacitor is provided. The decoupling capacitor comprises a first electrode; an intermediate layer adjacent to the first electrode having a plurality of nanochannels therein; a conformal dielectric layer formed over the intermediate layer and lining... Agent:

20110049676 - Method, structure, and design structure for a through-silicon-via wilkinson power divider: A method, structure, and design structure for a through-silicon-via Wilkinson power divider. A method includes: forming an input on a first side of a substrate; forming a first leg comprising a first through-silicon-via formed in the substrate, wherein the first leg electrically connects the input and a first output; forming... Agent:

20110049677 - Buried layer of an integrated circuit: Various aspects of the technology are directed to integrated circuit manufacturing methods and integrated circuits. In one method, a first charge type buried layer in a semiconductor material of an integrated circuit by implanting first charge type dopants of the first charge type buried layer through a sacrificial oxide over... Agent:

20110049678 - Lateral bipolar transistor with compensated well regions: Conduction between source and drain or emitter and collector regions is an important characteristic in transistor operation, particularly for lateral bipolar transistors. Accordingly, techniques that can facilitate control over this characteristic can mitigate yield loss by promoting the production of transistors that have an increased likelihood of exhibiting desired operational... Agent:

20110049679 - Method of processing of nitride semiconductor wafer, nitride semiconductor wafer, method of producing nitride semiconductor device and nitride semiconductor device: A nitride semiconductor wafer is planar-processed by grinding a bottom surface of the wafer, etching the bottom surface by, e.g., KOH for removing a bottom process-induced degradation layer, chamfering by a rubber whetstone bonded with 100 wt %-60 wt % #3000-#600 diamond granules and 0 wt %-40 wt % oxide... Agent:

20110049680 - Dual exposure track only pitch split process: An integrated circuit is formed with structures spaced more closely together than a transverse dimension of such structures, such as for making contacts to electronic elements formed at minimum lithographically resolvable dimensions by dark field split pitch techniques. Acceptable overlay accuracy and process efficiency and throughput for the split pitch... Agent:

20110049681 - Semiconductor structure and a method of forming the same: Some embodiments show a semiconductor structure including a substrate with a {100} crystal surface plane which includes a plurality of adjacent structured regions at a top side of the substrate. The plurality of adjacent structured regions includes adjacent substrate surfaces with {111} crystal planes and a III-V semiconductor material layer... Agent:

20110049682 - System and method for substrate wafer back side and edge cross section seals: Systems and methods for substrate wafer back side and edge cross section seals. In accordance with a first method embodiment, a silicon wafer of a first conductivity type is accessed. An epitaxial layer of the first conductivity type is grown on a front surface of the silicon wafer. The epitaxial... Agent:

20110049683 - Structures, methods and applications for electrical pulse anneal processes: Structures and methods are provided for nanosecond electrical pulse anneal processes. The method of forming an electrostatic discharge (ESD) N+/P+ structure includes forming an N+ diffusion on a substrate and a P+ diffusion on the substrate. The P+ diffusion is in electrical contact with the N+ diffusion. The method further... Agent:

20110049684 - Anticounterfeiting system and method for integrated circuits: An integrated circuit die comprises a device layer comprising a plurality of semiconductor devices; an interconnect layer comprising a plurality of interconnect paths connecting the semiconductor devices and embedded in a dielectric material; and a plurality of hard nanoparticles embedded in the dielectric material of the interconnect layer, the hard... Agent:

20110049685 - Semiconductor device with electromagnetic interference shielding: In accordance with the present invention, there is provided a quad flat no leads (QFN) semiconductor device or package including a leadframe wherein the leads of the leadframe are selectively formed so that portions one or more prescribed leads are exposed in a package body of the semiconductor package and... Agent:

20110049686 - Semiconductor package and method of manufacturing the same: A semiconductor package is provided. The semiconductor package includes a carrier, a die, a metal sheet and a molding compound. The die is disposed on the carrier. The metal sheet has a first portion and a second portion, wherein a receiving space is defined by the first portion and the... Agent:

20110049687 - Encapsulant interposer system with integrated passive devices and manufacturing method therefor: A method of manufacturing a semiconductor package system includes: forming a leadframe having a passive device; encapsulating the passive device to form an encapsulant interposer; attaching a first die to the encapsulant interposer; forming a substrate interposer having a second die; and stacking the encapsulant interposer over the substrate interposer.... Agent:

20110049688 - Tcp-type semiconductor device: A TCP type semiconductor device, which is connected to a plurality of substrate-side electrodes parallel to each other and each having a linear shape, has: a base film; a semiconductor chip mounted on the base film; and a plurality of leads formed on the base film and electrically connecting between... Agent:

20110049689 - Semiconductor device with acene heat spreader: A semiconductor device in which an adhesion between a lead and a sealing body (mold sealing body) is improved to prevent the peering is provided. In a semiconductor device having a semiconductor chip, a plurality of leads electrically connected to the semiconductor chip and mainly made of metal and a... Agent:

20110049692 - Connection device bewteen transistor and lead frame: A connection device includes a transistor, a lead frame, a first connection member and a second connection member. The signal is electronically connected between the transistor and the lead frame by the first and second connection members. The second connection member is located above the first connection member so as... Agent:

20110049690 - Direct contract leadless package for high current devices: Some exemplary embodiments of a direct contact leadless package and related structure and method, especially suitable for packaging high current semiconductor devices, have been disclosed. One exemplary structure comprises a first contact lead frame portion, a paddle portion, and an extended contact lead frame portion held together by a mold... Agent:

20110049693 - Semiconductor device, method of manufacturing semiconductor device, and lead frame thereof: A first semiconductor chip and a second semiconductor chip are overlapped with each other in a direction in which a first multilayer interconnect layer and a second multilayer interconnect layer are opposed to each other. When seen in a plan view, a first inductor and a second inductor are overlapped.... Agent:

20110049691 - Semiconductor package and method for packaging the same: A semiconductor package includes a chip, a carrier, a bonding wire and a molding compound. The chip includes a pad. The carrier includes a finger and has an upper surface and a lower surface opposite to the upper surface, wherein the upper surface supports the chip. The bonding wire is... Agent:

20110049696 - Off-chip vias in stacked chips: A microelectronic assembly includes first and second stacked microelectronic elements, each having spaced apart traces extending along a front face and beyond at least a first edge thereof. An insulating region can contact the edges of each microelectronic element and at least portions of the traces of each microelectronic element... Agent:

20110049695 - Semiconductor device and method of forming pre-molded semiconductor die having bumps embedded in encapsulant: A semiconductor wafer contains a plurality of semiconductor die. A plurality of bumps is formed on the semiconductor wafer. The bumps are electrically connected to contact pads on an active surface of the die. The bumps can also be pillars or stud bumps. A first encapsulant is deposited over the... Agent:

20110049694 - Semiconductor wafer-to-wafer bonding for dissimilar semiconductor dies and/or wafers: A semiconductor manufacturing process for wafer-to-wafer stacking of a reconstituted wafer with a second wafer creates a stacked (3D) IC. The reconstituted wafer includes dies, die interconnects and mold compound. When stacked, the die interconnects of the reconstituted wafer correspond to die interconnects on the second wafer. Wafer-to-wafer stacking improves... Agent:

20110049697 - Electronic package system: Disclosed herein is an electronic package system utilizing a module having a liquid contact material to prevent mechanically and thermally induced strains in an electrical joint. The conductivity of the liquid contact material provides electrical communication between the required electronic components of the package system. The ability of the liquid... Agent:

20110049698 - Semiconductor package and method of fabricating the same: A semiconductor package is provided. The semiconductor package includes a package body, a plurality of semiconductor chips, and an external connection terminal. The package body is stacked with a plurality of sheets where conductive patterns and vias are disposed. The plurality of semiconductor chips are inserted into insert slots extending... Agent:

20110049699 - Method of semiconductor device protection, package of semiconductor device: A method for protecting a semiconductor device is disclosed that can improve reliability of a performance test for the semiconductor device and prevent damage to the semiconductor device during transportation or packaging for shipment. An IC cover is attached to the semiconductor device, which has height unevenness because it includes... Agent:

20110049700 - Semiconductor assembly that includes a power semiconductor die located on a cell defined by first and second patterned polymer layers: A semiconductor assembly includes a first subassembly comprising a heat sink and a first patterned polymer layer disposed on a surface of the heat sink to define an exposed portion of the first surface. The exposed portion of the first surface extends radially inward along the heat sink surface from... Agent:

20110049701 - Semiconductor device and method of manufacturing the same: The semiconductor device includes a substrate; a semiconductor chip mounted over the substrate; resin encapsulating the semiconductor chip; and a heat dissipation material that is arranged over the semiconductor chip and in contact with the resin, wherein the resin includes a first resin region made of a first resin composition,... Agent:

20110049702 - Semiconductor package and method of producing the same: A method of producing a semiconductor package includes setting a radiator member on a semiconductor device that is mounted on a wiring board, said radiator member having a convex surface part on at least a part of a first surface thereof opposite to a second surface thereof to be bonded... Agent:

20110049703 - Flip-chip package structure: A flip-chip (FC) package structure is provided. The FC package structure includes a substrate, a chip, a plurality of copper platforms, a plurality of copper bumps, a plating layer, a circuit layer and a solder mask layer. The copper bumps are disposed on the substrate. The copper platforms are stacked... Agent:

20110049706 - Front side copper post joint structure for temporary bond in tsv application: An integrated circuit structure includes a semiconductor substrate; a conductive via (TSV) passing through the semiconductor substrate; and a copper-containing post overlying the semiconductor substrate and electrically connected to the conductive via.... Agent:

20110049709 - Method of manufacturing a semiconductor device: Chipping of semiconductor chips is to be prevented. A semiconductor device comprises a semiconductor chip having a main surface, a plurality of pads formed over the main surface, a rearrangement wiring formed over the main surface to alter an arrangement of the plurality of pads, and a protective film and... Agent:

20110049705 - Self-aligned protection layer for copper post structure: A copper post is formed in a passivation layer to electrically connect an underlying bond pad region, and extends to protrude from the passivation layer. A protection layer is formed on a sidewall surface or a top surface of the copper post in a self-aligned manner. The protection layer is... Agent:

20110049708 - Semiconductor chip interconnection structure and semiconductor package formed using the same: A semiconductor chip interconnection structure and a semiconductor package formed using the same are provided. The semiconductor chip interconnection structure comprises a chip, a bump assembly and an electrical element. The chip comprises a pad and has a pad aperture from which the pad is exposed. The bump assembly comprises... Agent:

20110049707 - Semiconductor device and method of manufacturing the semiconductor device: According to one embodiment, a semiconductor device includes an electrode pad, a protective layer, a bump, and a resin layer. The electrode pad is formed on a semiconductor substrate. The protective layer includes a pad opening formed in the position of the electrode pad. The bump is formed in the... Agent:

20110049704 - Semiconductor device packages with integrated heatsinks: In one embodiment, a semiconductor device package includes a circuit substrate, a chip, a plurality of first solder balls, an encapsulant, and a heatsink. The circuit substrate includes a carrying surface and a plurality of first bonding pads thereon. The chip is disposed on the carrying surface and electrically connected... Agent:

20110049711 - Elliptic c4 with optimal orientation for enhanced reliability in electronic packages: An arrangement for the equipping of electronic packages with elliptical C4 connects possessing optimal orientation for enhanced reliability. Furthermore, disclosed is a method providing elliptical C4 connects which possesses optimal orientation for enhanced reliability, as implemented in connection with their installation in electronic packages. Employed are essentially elliptical solder pads... Agent:

20110049710 - Interconnect layouts for electronic assemblies: Embodiments of the present disclosure provide an apparatus including an electronic device and a substrate to receive the electronic device, the electronic device being electrically coupled to the substrate using a plurality of interconnect structures, the interconnect structures being arranged on the electronic device based at least in part on... Agent:

20110049712 - Wafer level stacked die packaging: A stacked die package in which an adhesive pad separates a bottom die from a top die. The pad may be in the form of a wall of adhesive about a central hollow area. The bottom die is attached to a base with a low temperature curing adhesive or a... Agent:

20110049713 - Dual contact metallization including electroless plating in a semiconductor device: Contact elements of sophisticated semiconductor devices may be formed for gate electrode structures and for drain and source regions in separate process sequences in order to apply electroless plating techniques without causing undue overfill of one type of contact opening. Consequently, superior process uniformity in combination with a reduced overall... Agent:

20110049714 - Illuminant: The invention relates to an illuminant (40) comprising a standardised connection socket (42) and a cover (50) consisting of a light-permeable material defining an inner chamber (52). A light chip arrangement (10; 110) comprising at least one semiconductor structure (14; 114) is contacted between contact regions (48a, 48b) of at... Agent:

20110049715 - Method for depositing metal oxide films: A method for depositing a metal oxide film on a surface of a supporting body for the film, comprising the steps of: —providing a deposition chamber; —providing a pulsed beam of electrons and plasma in the deposition chamber; —supplying a supporting body in the deposition chamber, the supporting body having... Agent:

20110049717 - Integrated circuits having tsvs including metal gettering dielectric liners: An IC includes a substrate having a semiconductor top surface and a bottom surface, wherein the semiconductor top surface includes one or more active circuit components and a plurality of through silicon vias (TSVs) extending through the substrate. The plurality of TSVs include an outer dielectric liner. The dielectric liner... Agent:

20110049718 - Method of manufacturing semiconductor device, semiconductor device, electronic instrument, semiconductor manufacturing apparatus, and storage medium: When a barrier film is formed on an exposed surface of an interlayer insulation film on a substrate, the interlayer insulation film having a recess formed therein, and a metal wiring to be electrically connected to a metal wiring in a lower layer is formed in the recess, a barrier... Agent:

20110049716 - Structures of and methods and tools for forming in-situ metallic/dielectric caps for interconnects: A structure, tool and method for forming in-situ metallic/dielectric caps for interconnects. The method includes forming wire embedded in a dielectric layer on a semiconductor substrate, the wire comprising a copper core and an electrically conductive liner on sidewalls and a bottom of the copper core, a top surface of... Agent:

20110049719 - Semiconductor device and method for manufacturing the same: The semiconductor device includes a first interconnect layer insulating film, first copper interconnects that are embedded in the first interconnect layer insulating film, and an interlayer insulating film that is formed on the first copper interconnects and the first interconnect layer insulating film. The semiconductor device includes a second interconnect... Agent:

20110049720 - Refractory metal nitride capped electrical contact and method for frabricating same: According to one disclosed embodiment, an electrical contact for use on a semiconductor device comprises an electrode stack including a plurality of metal layers and a capping layer formed over the plurality of metal layers. The capping layer comprises a refractory metal nitride. In one embodiment, a method for fabricating... Agent:

20110049724 - Beol interconnect structures and related fabrication methods: Methods for forming voids in BEOL interconnect structures and BEOL interconnect structures. The methods include forming a temporary feature on a top surface of a first dielectric layer and depositing a second dielectric layer on the top surface of the first dielectric layer. The temporary feature is removed from the... Agent:

20110049721 - Metal density aware signal routing: Methods and apparatus for routing signal paths in an integrated circuit. One or more signal routing paths for transferring signals of the integrated circuit may be determined. A dummy fill pattern for the integrated circuit may be determined based on the one or more metal density specifications and at least... Agent:

20110049728 - Method to perform electrical testing and assembly of electronic devices: A method performs electrical testing and assembly of an electronic device on a wafer and comprising a pad made in an oxide layer covered by a passivation layer. The method includes connecting the electronic device to a testing apparatus; providing said electronic device with a metallization layer extending on the... Agent:

20110049723 - Methods and structures for controlling wafer curvature: Methods and structures for controlling wafer curvature during fabrication of integrated circuits caused by stressed films. The methods include controlling the conductor density of wiring levels, adding compensating stressed film layers and disturbing the continuity of stress films with the immediately lower layer. The structure includes integrated circuits having compensating... Agent:

20110049727 - Recessed interlayer dielectric in a metallization structure of a semiconductor device: In a complex metallization system, the probability of dielectric breakdown may be reduced by vertically separating a critical area of high electric field strength and an area of reduced dielectric strength of the interlayer dielectric material. For this purpose, the interlayer dielectric material may be recessed after forming the metal... Agent:

20110049725 - Semiconductor chip with contoured solder structure opening: Methods and apparatus to inhibit cracks and delaminations in a semiconductor chip solder bump are disclosed. In one aspect, a method of manufacturing is provided that includes forming a first dielectric layer over a first conductor structure of a semiconductor chip and forming a first opening in the first dielectric... Agent:

20110049722 - Semiconductor circuit structure and layout method thereof: A semiconductor circuit structure includes a substrate and an interconnect structure. The interconnect structure is disposed on the substrate and includes a plurality of circuit patterns and at least one closed loop pattern. The closed loop pattern is in a same layer with the circuit patterns, surrounds between the circuit... Agent:

20110049726 - Semiconductor package and manufacturing method of the semiconductor package: A semiconductor package includes a semiconductor chip; a resin part configured to cover a side surface of the semiconductor chip; and a wiring structure formed on a circuit forming surface of the semiconductor chip and a surface of the resin part being situated at the same side as the circuit... Agent:

20110049729 - Method for producing a hermetically sealed, electrical feedthrough using exothermic nanofilm: A method generates at least one electrical connection from at least one electronic component, which is positioned on a substrate inside an encapsulation, to outside the encapsulation. The functional capability of the electrical connection is to be provided at ambient temperatures greater than 140° C. and in the event of... Agent:

20110049730 - Device comprising an encapsulation unit: A device in accordance with one embodiment comprises a component (1) and an encapsulation arrangement (2) for the encapsulation of the component (1) with respect to moisture and/or oxygen, wherein the encapsulation arrangement (2) has a first layer (21) and thereabove a second layer (22) on at least one surface... Agent:

20110049731 - Materials and methods for stress reduction in semiconductor wafer passivation layers: The present invention provides polyimide polymer materials for passivating semiconductor wafers and methods for fabricating thereof.... Agent: