Active solid-state devices (e.g., transistors, solid-state diodes) inventions 12/07

20070295948 - Nonvolatile memory cell with concentric phase change material formed around a pillar arrangement: A memory cell comprises a first feature and a second feature. The second feature comprises a dielectric material and defines an opening at least partially overlying the first feature. A third feature is formed on the first feature and partially fills the opening in the second feature. What is more,... Agent: Ryan, Mason & Lewis, LLP

20070295949 - Phase change memory device and fabrication method thereof: A phase change memory device comprising an electrode, a phase change layer crossing and contacting the electrode at a cross region thereof, and a transistor comprising a source and a drain, wherein the drain of the transistor electrically connects the electrode or the phase change layer is disclosed.... Agent: Quintero Law Office, PC

20070295950 - Variable resistance random access memory device and a method of fabricating the same: Provided is a variable resistance random access memory device having an n+ interfacial layer and a method of fabricating the same. The variable resistance random access memory device may include a lower electrode, an n+ interfacial layer on the lower electrode, a buffer layer on the n+ interfacial layer, an... Agent: Harness, Dickey & Pierce, P.L.C

20070295951 - Light-emitting diode incorporating an array of light extracting spots: A light-emitting diode includes an optical layer formed in an array of substantially equidistant light extracting spots integrated to its multi-layer structure. The array of light extracting spots includes a distribution of juxtaposed hexagon patterns. The layer thickness of the light extracting spots is less than 800 Å, and preferably... Agent: David I. Roche Baker & Mckenzie LLP

20070295952 - Light emitting diode having vertical topology and method of making the same: An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting... Agent: Mckenna Long & Aldridge LLP

20070295957 - Dispersant compound and method for preparing the same: Disclosed herein are a novel oligomeric compound with improved dispersion performance and a method for preparing the same. The oligomeric compound comprises a tail structure consisting of hydrophilic and hydrophobic blocks and an amine or imidazole head structure. The dye containing the compound can be used to prepare a paste... Agent: Cantor Colburn, LLP

20070295956 - Optoelectronic device: The present invention provides an optoelectronic device comprising a light emitting semiconductor and an encapsulant. The encapsulant is made from an encapsulant formulation comprising an epoxy hydantoin, an epoxy isocyanurate, and a curing agent. The present invention also provides a method of preparing such optoelectronic device.... Agent: Fay Sharpe LLP

20070295961 - Organic light emitting display: An organic light emitting display is disclosed. One embodiment of the organic light emitting display includes a substrate member and a plurality of pixels that are formed on the substrate member. At least one of the pixels includes a thin film transistor, a light emitting element that is electrically connected... Agent: Knobbe Martens Olson & Bear LLP

20070295959 - Organic light-emitting display device: An organic light-emitting display device wherein an IR drop across a first electrode can be prevented. The organic light-emitting display device includes a substrate; a plurality of stripe-shaped first electrodes disposed on the substrate and extending in a first direction; a plurality of stripe-shaped first insulators extending in a second... Agent: Stein, Mcewen & Bui, LLP

20070295960 - Semiconductor device, electro-optical device, electronic apparatus, and method of producing semiconductor device: A semiconductor device includes an organic semiconductor transistor provided on a substrate; a data line connected to a source electrode or a drain electrode of the organic semiconductor transistor; and a gate line that is disposed so as to intersect the data line and that is connected to a gate... Agent: Harness, Dickey & Pierce, P.L.C

20070295958 - Semiconductor structure having a low hot-carrier effect characteristic: The present invention relates to a semiconductor structure having a low hot-carrier effect characteristic, and, more particularly, to a semiconductor structure capable of reducing the detrimental influence of the happening of the hot-carrier effect on the performance of the transistor having the semiconductor structure, even after the transistor has been... Agent: Bacon & Thomas, PLLC

20070295962 - Organic light emitting diode display and method for manufacturing the same: An organic light emitting diode (“OLED”) display includes a substrate, a gate line, a data line, a driving voltage line, a light blocking member, a switching thin film transistor (“TFT”), a driving TFT, and an OLED, wherein the driving voltage line includes a portion parallel to at least one of... Agent: Cantor Colburn, LLP

20070295963 - Tft array substrate and method of manufacturing the same: A TFT array substrate includes a TFT having an ohmic contact film and a source electrode and a drain electrode formed on the ohmic contact film. It also includes a pixel electrode electrically connected with the drain electrode. The source electrode and the drain electrode are made of an Al... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.C.

20070295965 - Thin film transistor, method of fabricating the same, and method of fabricating liquid crystal display device having the same: A thin film transistor includes a gate electrode, a gate insulation layer on the gate electrode, source and drain electrodes formed on the gate insulation layer, a polysilicon channel layer overlapping the ohmic contact layers and on the gate insulation layer between the source and drain electrodes, ohmic contact regions... Agent: Seyfarth Shaw, LLP

20070295966 - Conversion apparatus and imaging system: A conversion apparatus comprises a pixel region, on a substrate, including a plurality of pixels arranged in a matrix, each pixel having a conversion element that converts radiation into electric signals and a switching element, wherein the switching element has a structure comprising a gate electrode, a first insulating layer,... Agent: Fitzpatrick Cella Harper & Scinto

20070295970 - Base apparatus of a light emitting diode and method for manufacturing the light emitting diode: A base apparatus includes a base and two finger devices. The base has a first surface and two opposite sides. The finger devices are respectively mounted on the sides of the base, are made of conductive material, and each of the finger devices has multiple fingers. The fingers are extended... Agent: Rabin & Berdo, PC

20070295968 - Electroluminescent device with high refractive index and uv-resistant encapsulant: An encapsulant containing nanoparticles that improve the heat and UV resistance properties of electroluminescent devices. The nanoparticles that are suspended in the encapsulant may be either oxides or non-oxides and may include SiO2, TiO2, Al2O3, ZrO2, Ti, TiB2, TiC, and TiN. The nanoparticles may range in size from 5 to... Agent: Kathy Manke Avago Technologies Limited

20070295969 - Led device having a top surface heat dissipator: An LED Device Having a Top Surface Heat Dissipator is provided. The LED Device Having a Top Surface Heat Dissipator includes a substrate body, and a light emitting diode over the substrate body. The LED Device Having a Top Surface Heat Dissipator also has an electrically and thermally conductive heat... Agent: Kathy Manke Avago Technologies Limited

20070295971 - Light emitting device and method for fabricating the same: Disclosed are a light emitting device and a method for fabricating the same. The light emitting device can include a substrate, a buffer layer having a pattern on the substrate, a first conductive-type semiconductor layer on the buffer layer, an active layer on the first conductive-type semiconductor layer, and a... Agent: Saliwanchik Lloyd & Saliwanchik A Professional Association

20070295972 - Light emitting diode module: A light emitting diode module is disclosed. The light emitting diode module includes a substrate, a plurality of light emitting diodes, and a plurality of lenses. The light emitting diodes are disposed on the substrate, and the lenses are disposed on the substrate and covering the light emitting diodes, in... Agent: North America Intellectual Property Corporation

20070295979 - Led device having reduced spectrum: A structure of light emitting diode (LED) effectively reduces its spectral width. The LED structure is applied in a three color mixing of a backlight module to broaden a color space and to improve a saturation of a color display. A grating structure is used as a waveguide layer to... Agent: Troxell Law Office PLLC

20070295978 - Light emitting diode with direct view optic: An LED and light guide assembly has an LED with an output surface; a first power input lead electrically coupled to a first pole and having a first surface and a second surface; and a second power input lead electrically coupled to a second pole and having a first surface... Agent: William E. Meyer Osram Sylvania Inc.

20070295982 - Micro universal serial bus memory package and manufacturing method the same: In order to accomplish the object of the present invention, there is disclosed a micro USB memory package, which comprises a substrate with a plurality of circuit patterns formed on the top surface thereof, at least one of passive elements connected with the circuit patterns of the substrate, at least... Agent: St. Onge Steward Johnston & Reens, LLC

20070295953 - Germanium phototransistor with floating body: A floating body germanium (Ge) phototransistor and associated fabrication process are presented. The method includes: providing a silicon (Si) substrate; selectively forming an insulator layer overlying the Si substrate; forming an epitaxial Ge layer overlying the insulator layer using a liquid phase epitaxy (LPE) process; forming a channel region in... Agent: Sharp Laboratories Of America, Inc. C/o Law Office Of Gerald Maliszewski

20070295954 - Method and structure to isolate a qubit from the environment: A method (and structure) of coupling a qubit includes locating the qubit near a transmission line approximately at a location corresponding to a node at a predetermined frequency.... Agent: Mcginn Intellectual Property Law Group, PLLC

20070295955 - N-channel transistor: An n-channel or ambipolar field-effect transistor including an organic semiconductive layer having an electron affinity EAsemicond; and an organic gate dielectric layer forming an interface with the semiconductive layer; characterised in that the bulk concentration of trapping groups in the gate dielectric layer is less than 1018cm−3, where a trapping... Agent: Sughrue Mion, PLLC

20070295964 - Semiconductor device and method for preparing the same: A semiconductor device and a method for preparing the same that can solve crack of a semiconductor film, capacitance electrodes and the like due to stress when forming a source electrode and a drain electrode in a semiconductor device having a thin film transistor and a holding capacitance with three... Agent: Cook, Alex, Mcfarron, Manzo, Cummings & Mehler Ltd

20070295967 - Active matrix tft array substrate and method of manufacturing the same: An active matrix TFT array substrate includes a gate electrode and a gate line formed from a first metal film over a transparent insulating substrate, a gate insulating film to cover the gate electrode and gate line, a semiconductor layer formed over the gate insulating film, a source electrode and... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.C.

20070295974 - Incoherent combination of laser beams: A method of combining beams from a plurality of laser resonators includes frequency modulating the output of each of the lasers with one or more of the lasers frequency modulated out-of-phase with the others. The frequency modulated beams are directed along parallel spaced-apart paths and overlap in a plane along... Agent: Stallman & Pollock LLP

20070295973 - Method for manufacturing semiconductor device: The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a... Agent: Eric Robinson

20070295975 - Light-emitting device: A light-emitting device (1) is composed by integrating light-emitting diodes (2R, 2G, 2B) and a drive IC (3) for driving these light-emitting diodes (2R, 2G, 2B). The light-emitting device (1) is characterized in that the drive IC (3) has a built-in circuit for controlling the current value of each light-emitting... Agent: Westerman, Hattori, Daniels & Adrian, LLP

20070295976 - Semiconductor device and production method thereof: The semiconductor device of the present invention is a semiconductor device including P-type and N-type thin film transistors, at least one of the N-type thin film transistors having an off-set gate structure, at least one of the P-type thin film transistors having a LDD structure, wherein a P-type high concentration... Agent: Nixon & Vanderhye, PC

20070295977 - Optical semiconductor device and method of manufacturing the same: Provided is an optical semiconductor device, which includes a GaAs substrate (or a semiconductor substrate) 20; an n-type contact layer (or a doping layer) 21 formed on one surface 20a of the GaAs substrate 20; an active layer 25 formed on top of the n-type contact layer 21 and including... Agent: Kratz, Quintos & Hanson, LLP

20070295981 - Patterned light-emitting devices: Light-emitting devices (e.g., LEDs) and methods associated with such devices are provided. The devices may include a first pattern and a second pattern which are formed at one or more interfaces of the device (e.g., the emission surface). The patterns may be positioned such that light generated by the device... Agent: Luminus Devices , Inc. C/o Wolf, Greenfield & Sacks , P.C.

20070295980 - Semiconductor light emitting device, illuminating device, mobile communication device, camera, and manufacturing method therefor: A semiconductor light emitting device 100 comprises: a mount member 130 and a semiconductor light emitting element 110 arranged on the mount member 130, the mount member 130 including: a substrate 131; an electrode assembly (a positive electrode 134, a negative electrode 135, and bumps 140 to 144) that is... Agent: Wenderoth, Lind & Ponack L.L.P.

20070295983 - Optoelectronic device: The present invention provides an optoelectronic device comprising a light emitting semiconductor and an encapsulant. The encapsulant is made from an encapsulant formulation comprising an epoxy isocyanurate such as formula (I-1) compound, and a curing agent. The present invention also provides a method of preparing such optoelectronic device.... Agent: Fay Sharpe LLP

20070295985 - Gallium nitride material devices and methods of forming the same: The invention provides gallium nitride material devices, structures and methods of forming the same. The devices include a gallium nitride material formed over a substrate, such as silicon. Exemplary devices include light emitting devices (e.g., LED's, lasers), light detecting devices (such as detectors and sensors), power rectifier diodes and FETs... Agent: Wolf Greenfield & Sacks, P.C.

20070295984 - Gan based luminescent device on a metal substrate: e

20070295986 - Method of fabricating vertical structure leds: A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate,... Agent: Mckenna Long & Aldridge LLP Song K. Jung

20070295987 - Semiconductor device and method of driving the same: A semiconductor device includes: a bulk semiconductor substrate; a thyristor formed in the bulk semiconductor substrate; a gate electrode formed at the third region; and a well region. The thyristor included a first region of a first conduction type, a second region of a second conduction type opposite to the... Agent: Rader Fishman & Grauer PLLC

20070295988 - Dual-gate sensor: A sensor includes a first gate electrode, a second gate electrode, a semiconductor layer, a gate-insulating layer, a source electrode, a drain electrode, and a sensing portion including an accommodating part and a receiving layer. The first and second gate electrodes are opposed to each other with the sensing portion,... Agent: Fitzpatrick Cella Harper & Scinto

20070295992 - Hetero junction field effect transistor and method of fabricating the same: There is provided a hetero junction field effect transistor including: a first layer of a nitride based, group III-V compound semiconductor; a second layer of a nitride based, group III-V compound semiconductor containing a rare earth element, overlying the first layer; a pair of third layers of a nitride based,... Agent: Birch Stewart Kolasch & Birch

20070295991 - Semiconductor device and manufacturing method of the same: A semiconductor device according to the present invention includes: a semiconductor substrate; a channel layer formed on the semiconductor substrate; a donor layer formed on the channel layer; a first Schottky layer formed on the donor layer; a second Schottky layer formed on the first Schottky layer; a first gate... Agent: Greenblum & Bernstein, P.L.C

20070295989 - Strained semiconductor device and method of making same: A semiconductor body is formed from a first semiconductor material, e.g., silicon. A compound semiconductor region, e.g., silicon germanium, is embedded in the semiconductor body. The compound semiconductor region includes the first semiconductor material and a second semiconductor material. The compound semiconductor region has a concentration of the second semiconductor... Agent: Slater & Matsil LLP

20070295990 - Gan-based field effect transistor and production method therefor: A GaN-based heterostructure field effect transistor capable of accomplishing higher output, higher breakdown voltage, higher speed, higher frequency, and the like. A heterostructure field effect transistor including a channel layer (4) of GaN and a barrier layer (6) of AlGaN, wherein the surface of a transistor element has an insulating... Agent: Osha Liang L.L.P.

20070295993 - Low density drain hemts: Methods and devices for fabricating AlGaN/GaN normally-off high electron mobility transistors (HEMTs). A fluorine-based (electronegative ions-based) plasma treatment or low-energy ion implantation is used to modify the drain-side surface field distribution without the use of a field plate electrode. The off-state breakdown voltage can be improved and current collapse can... Agent: Groover & Holmes

20070295994 - Hetero junction bipolar transistor: A hetero-junction bipolar transistor is provided including emitter contact region, an emitter region made of a first semiconductor material, a base region made of a second semiconductor material having a smaller energy band gap than the first semiconductor material, a collector region made of the first semiconductor material, and a... Agent: Antonelli, Terry, Stout & Kraus, LLP

20070295995 - Methods of forming a semiconductor device including buried bit lines: A method of forming a buried interconnection includes removing a semiconductor substrate to form a groove in the semiconductor substrate. A metal layer is formed on inner walls of the groove using an electroless deposition technique. A silicidation process is applied to the substrate having the metal layer, thereby forming... Agent: Marger Johnson & Mccollom, P.C.

20070295996 - Closed cell configuration to increase channel density for sub-micron planar semiconductor power device: A semiconductor power device supported on a semiconductor substrate that includes a plurality of transistor cells, each cell has a source and a drain region disposed on opposite sides of a gate region in the semiconductor substrate. A gate electrode is formed as an electrode layer on top of the... Agent: Bo-in Lin

20070295998 - Forward body bias-controlled semiconductor integrated circuit: In a first functional block, a source voltage input terminal of a PMOS transistor and a substrate voltage input terminal of an NMOS transistor are connected to their voltage supply terminals, respectively. The substrate voltage input terminal of the PMOS transistor in the ith (1≦i≦n−1) functional block and the source... Agent: Mcdermott Will & Emery LLP

20070295997 - Integrated circuit anti-interference outline structure: ABSTRACT The invention discloses an integrated circuit anti-interference outline structure for applications of integrated circuits capable of shielding the integrated circuit from invasions of external electromagnetic waves and leaks of internal electromagnetic waves, wherein the integrated circuit anti-interference outline structure surrounds a periphery of a partial circuit within the integrated... Agent: Alcor Micro, Corp.

20070295999 - Semiconductor memory device and method of forming the same: Example embodiments provide a semiconductor memory device and method of forming a semiconductor memory device that may equalize load due to a coupling capacitance between a line and a component signal when the line intersects the component signal in a memory cell array. A line may intersect a memory cell... Agent: Harness, Dickey & Pierce, P.L.C

20070296000 - Method for manufacturing a semiconductor device: A method for manufacturing a semiconductor device, includes: partially forming an epitaxial growth stopper film on a single crystal semiconductor substrate; sequentially depositing a first semiconductor layer and a second semiconductor layer on the semiconductor substrate by an epitaxial growth process; forming a first groove penetrating through the second semiconductor... Agent: Advantedge Law Group, LLC

20070296001 - Multiple conduction state devices having differently stressed liners: A field effect transistor (“FET”) is provided which includes an active semiconductor region including a channel region, a first source-drain region and a second source-drain region. A major surface of the active semiconductor region is divided into a mutually exclusive first portion and a second portion. A first liner applies... Agent: International Business Machines Corporation Dept. 18g

20070296002 - Backside contacts for mos devices: A semiconductor structure includes a semiconductor substrate having a first surface and a second surface opposite the first surface, a gate dielectric over the first surface of the semiconductor substrate, a gate electrode over the gate dielectric, a source/drain region having at least a portion in the semiconductor substrate, a... Agent: Slater & Matsil, L.L.P.

20070296003 - Thin film transistor substrate and method for manufacturing the same: A thin-film transistor (TFT) substrate includes a base substrate, a semiconductor layer, a gate insulating layer, a first gate electrode and a second gate electrode. The semiconductor layer is formed on the base substrate and includes source, drain, channel and low concentration doped regions. The channel region is formed between... Agent: F. Chau & Associates, LLC

20070296004 - Suppression of dark current in a photosensor for imaging: A pixel cell having a halogen-rich region localized between an oxide isolation region and a photosensor. The halogen-rich region prevents leakage from the isolation region into the photosensor, thereby suppressing dark current in imagers.... Agent: Dickstein Shapiro LLP

20070296005 - Edge illuminated photodiodes: This invention comprises plurality of edge illuminated photodiodes. More specifically, the photodiodes of the present invention comprise novel structures designed to minimize reductions in responsivity due to edge surface recombination and improve quantum efficiency. The novel structures include, but are not limited to, angled facets, textured surface regions, and appropriately... Agent: Patentmetrix

20070296006 - Structure for pixel sensor cell that collects electrons and holes: The present invention relates to a design structure for a pixel sensor cell. The pixel sensor cell approximately doubles the available signal for a given quanta of light. A design structure for a pixel sensor cell having reduced complexity includes an n-type collection well region formed beneath a surface of... Agent: Ibm Microelectronics Intellectual Property Law

20070296008 - Semiconductor device: A semiconductor device includes: a semiconductor substrate; a transistor formed on the semiconductor substrate; an interlayer dielectric layer that covers the transistor; a ferroelectric capacitor formed above the interlayer dielectric layer and having a first electrode, a ferroelectric layer and a second electrode; another interlayer dielectric layer that covers the... Agent: Harness, Dickey & Pierce, P.L.C

20070296007 - Shared ground contact isolation structure for high-density magneto-resistive ram: A buried ground contact that connects the ground electrodes of transistors in adjacent memory cells that are separated by an isolation region is described. In some embodiments, the buried ground contact passes beneath the isolation region that separates cells to electrically connect the drain regions of transistors in adjacent cells.... Agent: Slater & Matsil LLP

20070296009 - Semiconductor device including a capacitance: It is an object to obtain a semiconductor device including a capacitance having a great Q-value. In an SOI substrate comprising a support substrate (165), a buried oxide film (166) and an SOI layer (171), an isolating oxide film 167 (167a to 167c) is selectively formed in an upper layer... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.C.

20070296010 - Pick-up structure for dram capacitors and dram process: A pick-up structure for DRAM capacitors and a DRAM process are described. A substrate with trenches therein is provided, wherein the trenches include a first trench and the sidewall of each of the trenches is formed with a dielectric layer thereon. A conductive layer is formed on the surfaces of... Agent: Jianq Chyun Intellectual Property Office

20070296011 - Structure and method for accurate deep trench resistance measurement: A test structure for implementing resistance measurement of a deep trench formed in a semiconductor device includes a pair of deep trenches formed within a semiconductor substrate. The pair of deep trenches has a dielectric material formed on side and bottom surfaces thereof, and includes a conductive fill material therein.... Agent: Cantor Colburn LLP - IBM Fishkill

20070296012 - Structure and method for accurate deep trench resistance measurement: A test structure for implementing resistance measurement of a deep trench formed in a semiconductor device includes a deep trench formed within a semiconductor substrate. The deep trench has a dielectric material formed on upper portions of sidewall surfaces thereof, and includes a conductive fill material therein. A doped buried... Agent: Cantor Colburn LLP - IBM Fishkill

20070296013 - Semiconductor device structure for reducing mismatch effects: An integrated circuit chip includes a first electronic device, a second electronic device, and a common electrode feature. The first electronic device includes a first feature. The first electronic device has a first footprint area in a given layer. The second electronic device includes a second feature. The second electronic... Agent: Slater & Matsil, L.L.P.

20070296014 - Semiconductor memory device and manufacturing method therefor: This disclosure concerns a semiconductor memory comprising Fin-type semiconductor layers (Fins) provided on the insulation layer provided on a substrate; first gate insulation films provided on first side surfaces of the Fins; second gate insulation films provided on second side surfaces of the Fins, the second side surfaces being opposite... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.C.

20070296015 - Memory devices having reduced interference between floating gates and methods of fabricating such devices: A floating gate memory array comprising transistors having isolated inter-gate dielectric regions with respect to one another and methods of fabricating the same. Floating gate transistors are formed such that each of the floating gate transistors in the array has a floating gate, a control gate and an inter-gate dielectric... Agent: Fletcher Yoder (micron Technology, Inc.)

20070296017 - Nonvolatile semiconductor memory: A nonvolatile semiconductor memory in which the area of each memory cell is small and which can perform high-speed operation with accuracy. A pair of honeycomb-like diffusion layers which are deviated from each other by a quarter-pitch are formed. Memory transistors (MemoryTr) and select transistors (SelectTr) are formed at portions... Agent: Arent Fox LLP

20070296016 - Semiconductor device and method of manufacturing the same: A semiconductor device including a semiconductor substrate; an element isolation region having a trench filled with an insulating film defined or the semiconductor substrate; a memory cell transistor formed in an element forming region isolated by the element isolating regions of the semiconductor substrate; and the memory cell transistor includes... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.C.

20070296018 - Nonvolatile single-poly memory device: A non-volatile single-poly memory device is disclosed. The non-volatile single-poly memory device includes two mirror symmetric unit cells, which is capable of providing improved data correctness. Further, the non-volatile single-poly memory device is operated at low voltages and is fully compatible with logic processes.... Agent: North America Intellectual Property Corporation

20070296020 - Semiconductor device: p-type wells are provided within an n-type embedded well of a semiconductor substrate lying in an area for forming a flash memory, in a state of being isolated from one another. A capacitance section, a data write/erase charge injection/discharge section and a data read MIS•FET are disposed in each of... Agent: Miles & Stockbridge PC

20070296019 - Non-volatile electromechanical field effect devices and circuits using same and methods of forming same: Under one aspect, a field effect device includes a gate, a source, and a drain, with a conductive channel between the source and the drain; and a nanotube switch having a corresponding control terminal, said nanotube switch being positioned to control electrical conduction through said conductive channel. Under another aspect,... Agent: Wilmerhale/boston

20070296021 - Nonvolatile semiconductor memory with backing wirings and manufacturing method thereof: A manufacturing method of a nonvolatile semiconductor memory includes steps (a) to (d). The (a) is a step of laminating a 2nd insulating film, a gate film and a hard mask film which cover a 1st gate electrode of a 1st memory cell transistor formed on a 1st region of... Agent: Foley And Lardner LLP Suite 500

20070296022 - Flash memory process with high voltage ldmos embedded: A method of embedding the forming of peripheral devices such as HV-LDMOS into the forming of flash memory is presented. A layered structure is formed with a first insulating layer formed on a substrate, and a poly silicon formed on the first insulating layer in the flash memory region. A... Agent: Slater & Matsil, L.L.P.

20070296023 - Charge monitoring devices and methods for semiconductor manufacturing: A charge monitoring device is described for monitoring charging effect during semiconductor manufacturing. In a first aspect of the invention, a charge storage MOS memory structure comprises a substrate body, an oxide-nitride-oxide structure that overlays a top surface of the substrate and extends above the edges between a source region... Agent: Macronix C/o Haynes Beffel & Wolfeld LLP

20070296024 - Memory device and manufacturing method and operating method thereof: A memory device including a substrate, a plurality of conductive layers, a composite dielectric layer and a plurality of gates are provided. Wherein, the conductive layers are disposed on the substrate. The composite dielectric layer is disposed on the substrate and covers the conductive layers. The composite dielectric layer includes... Agent: J.c. Patents, Inc.

20070296025 - Random number generating device: A random number generating device includes a semiconductor device including a source region, a drain region, a channel region provided between the source region and the drain region, and an insulating portion provided on the channel region, the insulating portion including a trap insulating film having traps based on dangling... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.C.

20070296026 - Sonos memory device: A SONOS memory device, and a method of manufacturing the same, includes a substrate and a multifunctional device formed on the substrate. The multifunctional device performs both switching and data storing functions. The multifunctional device includes first and second impurities areas, a channel formed between the first and second impurities... Agent: Lee & Morse, P.C.

20070296027 - Cmos devices comprising a continuous stressor layer with regions of opposite stresses, and methods of fabricating the same: The present invention relates to complementary metal-oxide-semiconductor (CMOS) devices having a continuous dielectric stressor layer containing regions of opposite stresses. Specifically, each CMOS device of the present invention includes at least one n-channel field effect transistor (n-FET) and at least one p-channel field effect transistor (p-FET). A continuous dielectric stressor... Agent: Scully Scott Murphy & Presser, PC

20070296028 - Vertical field-effect transistor and method of forming the same: A semiconductor device, a method of forming the same, and a power converter including the semiconductor device. In one embodiment, the semiconductor device includes a heavily doped substrate, a source/drain contact below the heavily doped substrate, and a channel layer above the heavily doped substrate. The semiconductor device also includes... Agent: Slater & Matsil, L.L.P.

20070296029 - Integratred circuit including a trench transistor having two control electrodes: An integrated circuit including a field effect controllable trench transistor having two-control electrodes is disclosed. One embodiment provides a trench having a first control electrode and a second control electrode. A first electrical line is provided in an edge structure for electrically contact-connecting second control electrode.... Agent: Dicke, Billig & Czaja

20070296030 - Semiconductor integrated circuit device having deposited layer for gate insulation: A method for manufacturing a semiconductor integrated circuit device including a first field effect transistor having a gate insulating film formed over a first element forming region of a main surface of a semiconductor substrate; and a second field effect transistor having a gate insulating film formed over a second... Agent: Antonelli, Terry, Stout & Kraus, LLP

20070296031 - Semiconductor device and manufacture method thereof: The present invention provides a trench gate Tr having a first gate electrode and a second gate electrode in the inside of a groove. The first gate electrode is provided in a groove lower part defining a channel of the Tr with a gate oxide film interposed between the first... Agent: Foley And Lardner LLP Suite 500

20070296035 - Apparatus and method for semiconductor bonding: An apparatus for bonding semiconductor structures includes equipment for positioning a first surface of a first semiconductor structure directly opposite and in contact with a first surface of a second semiconductor structure and equipment for forming a bond interface area between the first surfaces of the first and second semiconductor... Agent: Akc Patents

20070296033 - Non-volatile memory device having four storage node films and methods of operating and manufacturing the same: A nonvolatile memory device that may operate in a multi-bit mode and a method of operating and manufacturing the nonvolatile memory device are provided. The nonvolatile memory device may include a first source region and a first drain region that are respectively in first fin portions on both sides of... Agent: Harness, Dickey & Pierce, P.L.C

20070296034 - Silicon-on-insulator (soi) memory device: A single-poly SOI memory cell includes a PMOS select transistor serially connected with a floating-gate PMOS transistor on an SOI substrate. The PMOS select transistor includes a select gate, a P+ source region and a P+ drain/source region. The floating-gate PMOS transistor includes a floating gate, a P+ drain region... Agent: North America Intellectual Property Corporation

20070296036 - Soi device with contact trenches formed during epitaxial growing: A method for manufacturing an integrated electronic device. The method includes providing an SOI substrate having a semiconductor substrate, an insulating layer on the semiconductor substrate, and a semiconductor starting layer on the insulating layer; epitaxially growing the starting layer to obtain a semiconductor active layer on the insulating layer... Agent: Stmicroelectronics Inc. C/o Wolf, Greenfield & Sacks, P.C.

20070296032 - Artificial dielectrics using nanostructures: Artificial dielectrics using nanostructures, such as nanowires, are disclosed. In embodiments, artificial dielectrics using other nanostructures, such as nanorods, nanotubes or nanoribbons and the like are disclosed. The artificial dielectric includes a dielectric material with a plurality of nanowires (or other nanostructures) embedded within the dielectric material. Very high dielectric... Agent: Sterne, Kessler, Goldstein & Fox P.l.l.c.

20070296038 - High performance stress-enhanced mosfets using si:c and sige epitaxial source/drain and method of manufacture: A semiconductor device and method of manufacturing a semiconductor device. The semiconductor device includes channels for a pFET and an nFET. A SiGe layer is selectively grown in the source and drain regions of the pFET channel and a Si:C layer is selectively grown in source and drain regions of... Agent: Greenblum & Bernstein, P.L.C

20070296037 - Semiconductor device and manufacturing method of semiconductor device: The present invention provides a thin and bendable semiconductor device utilizing an advantage of a flexible substrate used in the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device has at least one surface covered by an insulating layer which serves as a substrate for protection.... Agent: Eric Robinson

20070296039 - Semiconductor device structures incorporating voids and methods of fabricating such structures: Semiconductor device structures and fabrication methods for field effect transistors in which a gate electrode is provided with an air gap or void disposed adjacent to a sidewall of the gate electrode. The void may be bounded by a dielectric spacer proximate to the sidewall of the gate electrode and... Agent: Wood, Herron & Evans, L.L.P. (ibm)

20070296040 - Semiconductor device, and life prediction circuit and life prediction method for semiconductor device: A life prediction wire 14 is connected to an emitter-wire bonding pad 2 of a semiconductor device 1. Wire deterioration is detected by checking whether or not an electric current flows from the life prediction wire 14 to the emitter-wire bonding pad 2. Thus, by directly checking a deterioration state... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.C.

20070296041 - Semiconductor device and method of manufacturing the same: A semiconductor device including a semiconductor substrate, a memory cell transistor formed in a memory cell region of the semiconductor substrate; a transistor formed in a peripheral circuit region of the semiconductor substrate and having an LDD (Lightly Doped Drain) structure; and the memory cell transistor has a same film... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.C.

20070296042 - Field-effect transistor structures with gate electrodes with a metal layer: Provided is an integrated circuit including a transistor with a gate electrode. The gate electrode includes a polysilicon layer in contact with a gate dielectric layer separating the gate electrode and a semiconductor substrate that comprises an active region of the transistor. The gate electrode includes sidewall structures extending along... Agent: Dicke, Billig & Czaja

20070296043 - Semiconductor device: A semiconductor device includes a semiconductor substrate, an nMISFET formed on the substrate, the nMISFET including a first dielectric formed on the substrate and a first metal gate electrode formed on the first dielectric and formed of one metal element selected from Ti, Zr, Hf, Ta, Sc, Y, a lanthanoide... Agent: Finnegan, Henderson, Farabow, Garrett & Dunner LLP

20070296044 - Device having dual etch stop liner and reformed silicide layer and related methods: The present invention provides a semiconductor device having dual silicon nitride liners and a reformed silicide layer and related methods for the manufacture of such a device. The reformed silicide layer has a thickness and resistance substantially similar to a silicide layer not exposed to the formation of the dual... Agent: Hoffman, Warnick & D'alessandro LLC

20070296045 - Semiconductor device and method for manufacturing the same: A semiconductor device is provided with a semiconductor substrate, a plurality of active regions separated from each other by element isolation regions formed on the semiconductor substrate; gate oxide films formed on the active regions; gate electrodes formed on the gate oxide films; side wall insulation films formed on side... Agent: Young & Thompson

20070296046 - Semiconductor device and method of manufacture thereof: In a high withstand voltage transistor of a LOCOS offset drain type having a buried layer, a plurality of stripe-shaped diffusion layers are formed below a diffusion layer ranging from an offset layer to a drain layer and a portion between the drain region and the buried layer is depleted... Agent: Steptoe & Johnson LLP

20070296047 - Thin film transistors with poly(arylene ether) polymers as gate dielectrics and passivation layers:

20070296048 - Double gate transistor, method of manufacturing same, and system containing same: A double gate transistor comprises a substrate (105, 905) and first and second electrically insulating layers (110, 910), (120, 920). The first and second electrically insulating layers form a fin (130, 930). A first gate dielectric (140,940) is at a first side (131, 931) of the fin and a second... Agent: Intel Corporation C/o Intellevate, LLC

20070296050 - Electro-optical device and electronic apparatus: An electro-optical device includes peripheral circuit wiring arranged in the peripheral area on the element substrate, and which has overlapping portions that overlap vertical conduction terminals on the element substrate in plan view. The overlapping portions are arranged on a lower layer side relative to the vertical conduction terminals.... Agent: Advantedge Law Group, LLC

20070296049 - Moveable barriers with obstruction detection: A system includes a photo beam detector. The photobeam detector senses a presence of an obstruction. The system also includes an apparatus to attach the photo beam detector to the moveable barrier. At least a portion of the photo beam detector is positioned at the moveable barrier such that a... Agent: Fitch Even Tabin And Flannery

20070296051 - Full frame ito pixel with improved optical symmetry: A charge-coupled device includes a photosensitive region for collecting charge in response to incident light; a first and third gate electrode made of a transmissive material spanning at least a portion of the photosensitive region; and a second gate electrode made of a transmissive material that is less transmissive than... Agent: Pamela R. Crocker Eastman Kodak Company

20070296052 - Methods of forming silicide regions and resulting mos devices: A semiconductor device with improved roll-off resistivity and reliability are provided. The semiconductor device includes a gate dielectric overlying a semiconductor substrate, a gate electrode overlying the gate dielectric, a gate silicide region on the gate electrode, a source/drain region adjacent the gate dielectric, and a source/drain silicide region on... Agent: Slater & Matsil, L.L.P.

20070296053 - Semiconductor device and method of forming the same: A method of forming a semiconductor device is provided. A device isolation region is formed in a semiconductor substrate, thereby defining a device region in the semiconductor substrate. The device region has a flat main surface. The flat main surface is deformed into a round surface, thereby forming a surface-rounded... Agent: Sughrue Mion, PLLC

20070296054 - Fuse with silicon nitride removed from fuse surface in cutting region: A fuse is formed by a borderless contact process that removes the silicon nitride layer above the cutting region of the fuse. The fuse is formed on a semiconductor substrate, and comprises an insulation layer such as an oxide layer formed on the substrate, a fuse layer formed on the... Agent: Fenwick & West LLP

20070296056 - Integrated circuits having controlled inductances: An electronic device has a semiconductor chip (101) with a surface and an electric circuit including terminals on the surface. The circuit has a first (103) and a second terminal (104) with a metallurgical composition for wire bonding. The chip has a conductive wire (120) above the chip surface, which... Agent: Texas Instruments Incorporated

20070296057 - Integrated low inductance interconnect for rf integrated circuits: An interconnect path configured for use in RFICs and configured to reduce inductance at the input of an array of cells, and also at the output of the array of cells. According to one preferred embodiment of the present invention, a multi-layered interconnect formed by at least two metal layers... Agent: Jackson Walker LLP

20070296055 - Rf integrated circuit with esd protection and esd protection apparatus thereof: A radio frequency (RF) integrated circuit with electrostatic discharge (ESD) protection and an ESD protection apparatus thereof are provided. The ESD protection apparatus includes a substrate, an RF bonding pad, and an ESD protection unit. The RF bonding pad for transmitting RF signal is disposed upon the substrate. The ESD... Agent: Jianq Chyun Intellectual Property Office

20070296058 - Semiconductor structure of a high side driver and method for manufacturing the same: A semiconductor structure of a high side driver and method for manufacturing the same is disclosed. The semiconductor of a high side driver includes an ion-doped junction and an isolation layer formed on the ion-doped junction. The ion-doped junction has a number of ion-doped deep wells, and the ion-doped deep... Agent: Bacon & Thomas, PLLC

20070296059 - Semiconductor device: A semiconductor device includes a semiconductor substrate including a main surface; a plurality of first interconnections formed in a capacitance forming region defined on the main surface and extending in a predetermined direction; a plurality of second interconnections each adjacent to the first interconnection located at an edge of the... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.C.

20070296060 - Method for forming p-type semiconductor region, and semiconductor element: A substrate 103 is set in a film-forming apparatus, such as a metal organic vapor phase epitaxy system 101, and a GaN buffer film 105, an undoped GaN film 107, and a GaN film 109 containing a p-type dopant are successively grown on the substrate 103 to form an epitaxial... Agent: Fish & Richardson P.C.

20070296061 - Group iii-nitride crystal substrate and manufacturing method thereof, and group iii-nitride semiconductor device: A method of manufacturing a group III-nitride crystal substrate including the steps of introducing an alkali-metal-element-containing substance, a group III-element-containing substance and a nitrogen-element-containing substance into a reactor, forming a melt containing at least the alkali metal element, the group III-element and the nitrogen element in the reactor, and growing... Agent: Mcdermott Will & Emery LLP

20070296062 - Substrate strip and substrate structure and method for manufacturing the same: A substrate structure is disclosed. The substrate structure includes a core substrate, an interconnection portion and a solder mask. The core substrate includes a top surface and a bottom surface opposite the top surface. A circuit pattern is disposed on the top surface. The interconnection portion is disposed on the... Agent: Thomas, Kayden, Horstemeyer & Risley, LLP

20070296063 - Spin coating apparatus and coating method of composition for antireflection layer: A spin coating apparatus includes a cleaning liquid ejection device that supplies a cleaning liquid primarily containing water to a surface of a lens base material, an antireflection-layer composition ejection device that supplies a composition for an antireflection layer to form an antireflection layer on the surface of the lens... Agent: Sughrue Mion, PLLC

20070296064 - Electronic structures utilizing etch resistant boron and phosphorus materials and methods to form same: A dense boron-based or phosphorus-based dielectric material is provided. Specifically, the present invention provides a dense boron-based dielectric material comprised of boron and at least one of carbon, nitrogen, and hydrogen or a dense phosphorus-based dielectric comprised of phosphorus and nitrogen. The present invention also provides electronic structures containing the... Agent: Scully Scott Murphy & Presser, PC

20070296065 - 3d electronic packaging structure having a conductive support substrate: The present invention provides a 3D electronic packaging unit having a conductive supporting substrate that can achieve multi-chip stacking through the signal contacts on the both sides of the unit. The packaging unit can be batched manufactured on wafers or substrates, and thus reduce the manufacturing cost of each individual... Agent: Bacon & Thomas, PLLC

20070296067 - Bga semiconductor package and method of fabricating the same: A semiconductor package and a method of fabricating the same are provided. The semiconductor package includes a semiconductor chip and a circuit board. The semiconductor chip has a bond pad. The circuit board has a base substrate with a throughole, and a conductive film pattern placed on a sidewall of... Agent: Marger Johnson & Mccollom, P.C.

20070296066 - Electrical connector with elongated ground contacts: In an electrical connector, cross talk between signal contacts in adjacent linear columns and rows may be reduced by changing the size of the lead portions of the contacts extending within a leadframe housing. For example, the height of the ground contact lead portions may be increased to further isolate... Agent: Woodcock Washburn, LLP

20070296068 - In-situ monitoring and method to determine accumulated printed wiring board thermal and/or vibration stress fatigue using a mirrored monitor chip and continuity circuit: A monitoring system includes a monitor chip or chips soldered to a printed wiring board. By mirroring a function IC chip interface with the monitor chip, the consumed and remaining thermal/and or vibration-fatigue life of the function IC chip based on the life-environment actually experienced through monitoring of the monitor... Agent: Carlson, Gaskey & Olds, P.C.

20070296069 - Semiconductor apparatus with decoupling capacitor: A lead frame type of semiconductor apparatus includes a die pad on which a semiconductor chip is mounted; ground terminals which are to be grounded; power supply terminals which are connected to a power supply; inner leads connected to the ground terminals and power supply terminals, in which a pair... Agent: Rabin & Berdo, PC

20070296070 - Semiconductor package having functional and auxiliary leads, and process for fabricating it: A semiconductor package and a process for fabricating such a package are presented. The package has a substantially parallelepipedal block, made of an encapsulation material. Embedded within the block is at least one integrated-circuit chip and a leadframe having functional leads for electrical connection to said chip. These functional leads... Agent: Gardere Wynne Sewell LLP Intellectual Property Section

20070296072 - Compliant integrated circuit package substrate: An integrated circuit package may include a plurality of interconnects, and an integrated package substrate coupled to the plurality of interconnects and comprising an integrated circuit package substrate core. A first surface of the integrated circuit package substrate core may define a depression.... Agent: Buckley, Maschoff & Talwalkar LLC Attorneys For Intel Corporation

20070296071 - Microelectronic package including temperature sensor connected to the package substrate and method of forming same: A microelectronic package, a method of forming the package and a system incorporating the package. The package includes a substrate; a die bonded to the substrate; and a thermal sensor connected to the substrate.... Agent: Intel Corporation C/o Intellevate, LLC

20070296073 - Three dimensional integrated circuit and method of making the same: A three dimensional integrated circuit structure includes at least first and second devices, each device comprising a substrate and a device layer formed over the substrate, the first and second devices being bonded together in a stack, wherein the bond between the first and second devices comprises a metal-to-metal bond... Agent: Duane Morris LLPIPDepartment (tsmc)

20070296074 - Embedded metal heat sink for semiconductor device and method for manufacturing the same: An embedded metal heat sink for a semiconductor device and a method for manufacturing the same are described. The embedded metal heat sink for a semiconductor device comprises a metal thin layer, a metal heat sink and two bonding pads. The metal thin layer including a first surface and a... Agent: Lowe Hauptman Ham & Berner, LLP

20070296075 - Package using selectively anodized metal and manufacturing method thereof: A package using selectively anodized metal and a manufacturing method thereof are provided. The method includes a patterning step, an anodized metal film forming step, a via hole forming step, and a bump forming step. The pattering step is performed by attaching a masking material to a surface of a... Agent: Gwips Peter T. Kwon

20070296076 - Semiconductor device and apparatus and method for manufacturing the same: The present invention provides a semiconductor device including: a semiconductor chip mounted on a substrate; a heat spreader provided above the semiconductor chip; and a sealing resin interposed between the semiconductor chip and the heat spreader and covering the semiconductor chip. The heat spreader is not in contact with any... Agent: Young & Thompson

20070296077 - Semiconductor component and method of manufacture: In various embodiments, semiconductor components and methods to manufacture semiconductor components are disclosed. In one embodiment, a method to manufacture semiconductor components includes attaching multiple heat spreaders to a semiconductor wafer. Other embodiments are described and claimed.... Agent: Hvvi Semiconductors, Inc.

20070296079 - Heat dissipating structure and method for fabricating the same: A heat sink package structure and a method for fabricating the same are disclosed. The method includes mounting and electrically connecting a semiconductor chip to a chip carrier, forming an interface layer or a second heat dissipating element having the interface layer on the semiconductor chip and installing a first... Agent: Edwards Angell Palmer & Dodge LLP

20070296078 - Semiconductor module having low thermal load: At least one bearing body in a power semiconductor module has a surface section on which a first semiconductor component and at least one additional semiconductor component are arranged adjacent to each other. The semiconductor components have contact surfaces, oriented away from the surface section of the bearing body, that... Agent: Staas & Halsey LLP

20070296080 - Semiconductor devices and method of manufacturing them: A semiconductor device is provided with a silicon substrate, with a surface for soldering the silicon substrate to a ceramic substrate, and an electrode making contact with the surface of the silicon substrate. The electrode comprises a first conductor layer, a second conductor layer, and a third conductor layer. The... Agent: Finnegan, Henderson, Farabow, Garrett & Dunner LLP

20070296082 - Semiconductor device having conductive adhesive layer and method of fabricating the same: In a semiconductor device, a semiconductor substrate may include a plurality of first conductive pads. An insulating isolation layer may be on the semiconductor substrate so as to separate the first conductive pads. A package substrate may include a plurality of second conductive pads. A conductive adhesive layer may connect... Agent: Harness, Dickey & Pierce, P.L.C

20070296081 - Semiconductor package and method of manufacturing the same: Disclosed is a semiconductor package and a method of manufacturing the same. The semiconductor package includes a semiconductor chip that includes metal pads provided on a predetermined area of an upper side of a semiconductor substrate, where element structures used to manufacture a semiconductor element are formed, and bump electrodes... Agent: HorizonIPPte Ltd

20070296083 - Low dielectric constant integrated circuit insulators and methods: A system for low dielectric constant insulators is provided. One aspect of this disclosure relates to a method for forming an insulator. According to an embodiment of the method, a first structural material is applied as one or more layers of insulation to an integrated circuit surface, a damascene pattern... Agent: Schwegman, Lundberg & Woessner, P.A.

20070296084 - Small grain size, conformal aluminum interconnects and method for their formation: A first layer of titanium nitride (TiN) is formed on a semiconductor structure, such as an interconnect via. Then, a second layer of TiN is formed on the first layer of TiN. The first layer of TiN is amorphous. The second layer of TiN is polycrystalline, having a mixed grain... Agent: Schwegman, Lundberg & Woessner, P.A.

20070296085 - Mim capacitor and method of making same: A MIM capacitor device and method of making the device. The device includes an upper plate comprising one or more electrically conductive layers, the upper plate having a top surface, a bottom surface and sidewalls; a spreader plate comprising one or more electrically conductive layers, the spreader plate having a... Agent: Schmeiser, Olsen & Watts

20070296086 - Integrated circuit package system with offset stack: An integrated circuit package system is provided including mounting a first integrated circuit device over a carrier, mounting a second integrated circuit device having an adhesive spacer over the first integrated circuit device in an offset configuration, connecting a first internal interconnect between the carrier and the first integrated circuit... Agent: Ishimaru & Zahrt LLP

20070296087 - Semiconductor device and method for manufacturing semiconductor device: A semiconductor device includes a first semiconductor chip face-down mounted on a substrate, a second semiconductor chip face-up mounted on the first semiconductor chip, and an electromagnetic shielding plate interposed between the first semiconductor chip and the second semiconductor chip.... Agent: Harness, Dickey & Pierce, P.L.C

20070296088 - Semiconductor device and method of manufacturing the same, circuit board, and electronic instrument: A semiconductor device comprising: a semiconductor element having a plurality of electrodes; a passivation film formed on the semiconductor element in a region avoiding at least a part of each of the electrodes; a conductive foil provided at a given spacing from the surface on which the passivation film is... Agent: Oliff & Berridge, PLC

20070296089 - Use of a die-attach composition for high power semiconductors, method for attaching same to a printed circuit board and semiconductor device manufactured thereby: The Directive 2002/95/EC of the European Parliament and of the Council promulgated that from 1 Jul. 2006 new electrical and electronic equipment must no longer contain lead. Accordingly, lead-free solder alloys for various electrical and electronic applications have been developed. But at present, lead in high melting temperature type solders,... Agent: Kalow & Springut LLP

20070296090 - Die package and probe card structures and fabrication methods: A semiconductor die has conductors encapsulated in a dielectric material disposed on the active surface extending across the active surface from bond pads to one or more peripheral edges where the conductor ends are disposed at a side surface of the dielectric material. Stacks of such semiconductor dice, wherein one... Agent: Trask Britt, P.C./ Micron Technology

20070296091 - Semiconductor device having symbol pattern utilized as indentification sign and its manufacture method: A plurality of device patterns constituting part of an electronic circuit are formed over the surface of a substrate. A symbol pattern to be used for an identification sign is formed in the same layer as the device patterns. A width of the device pattern is within a pattern width... Agent: Westerman, Hattori, Daniels & Adrian, LLP

20070296092 - Pixel circuit: A pixel circuit includes a LED, first switch, second switch, first transistor, second transistor and capacitor. The LED has a first end receiving a first supply voltage. The first switch has a first terminal receiving a data signal and a control terminal receiving a scan signal. The second switch has... Agent: Rabin & Berdo, PC

20070290185 - Phase change memory cells and methods for fabricating the same: Phase change memory cells and methods for fabricating the same are provided. In an exemplary embodiment, a phase change memory cell comprises a first electrode disposed over a substrate along a first direction. A first dielectric layer is formed over the first electrode. A conductive contact is formed in the... Agent: Quintero Law Office, PC

20070290187 - Repair structure and active device array substrate: A repair structure including a substrate, at least one first conducting line, a first insulating layer, at least one second conducting line and a repair connecting layer is provided. The at least one first conducting line is disposed on the substrate. The first insulating layer is disposed over the substrate... Agent: Jianq Chyun Intellectual Property Office

20070290189 - Light emitting device and method of manufacturing the same: The invention discloses a light emitting device including a substrate, a first metal layer, and an infrared light emitter. The substrate has a first surface, and the first metal layer is formed on the first surface of the substrate. The infrared light emitter is formed on the first metal layer... Agent: Birch Stewart Kolasch & Birch

20070290188 - Semiconductor light emitting device substrate and method of fabricating the same: A substrate for semiconductor light emitting devices is provided. The substrate is characterized in that the substrate is a single crystal material and has a nanocrystal structure capable of diffracting an electromagnetic wave. The nanocrystal structure is disposed on a surface portion of the substrate and includes an etched region... Agent: Jianq Chyun Intellectual Property Office

20070290191 - Resonant cavity optoelectronic device with suppressed parasitic modes: In other embodiments a double periodicity is selected to ensure a high reflectivity of light in a direction tilted with respect to the vertical direction. An optoelectronic device having a multilayer interference reflector with two periodicities can operate as a light-emitting diode, a superluminescence light-emitting diode, a laser diode, a... Agent: Vitaly Shchukin

20070290192 - Method to prevent defects on sram cells that incorporate selective epitaxial regions: An SRAM device and method of forming MOS transistors of the device having reduced defects associated with selective epitaxial growth in moat tip regions is discussed. The SRAM device comprises a core region and a logic region, logic transistors within the logic region of the SRAM, and selective epitaxial regions... Agent: Texas Instruments Incorporated

20070290202 - Organosilicon compound: wherein, R1 represents a hydrogen atom, or an unsubstituted or substituted monovalent hydrocarbon group, R2 to R4 represent identical or different unsubstituted or substituted monovalent hydrocarbon groups, each R5 represents, independently, a hydrogen atom, or an unsubstituted or substituted monovalent hydrocarbon group, each R6 represents, independently, an identical or different... Agent: Oblon, Spivak, Mcclelland Maier & Neustadt, P.C.

20070290204 - Semiconductor structure and method for manufacturing thereof: The invention is directed to a semiconductor structure located on a substrate in a scribe line region of a wafer. The semiconductor structure comprises a first dielectric layer, a first test pad and a passivation layer. The first dielectric layer is disposed on the substrate and the first test pad... Agent: Jianq Chyun Intellectual Property Office

20070290205 - Dual-channel thin film transistor: A dual-channel thin film transistor is applied to a thin film transistor liquid crystal display. It includes a substrate, a gate electrode, a source, and a drain. The drain further includes two drain electrodes. The two drain electrodes form the dual-channel with the source. A channel layer is between the... Agent: North America Intellectual Property Corporation

20070290206 - Thin film transistor and organic electro-luminescence display device using the same: A thin film transistor includes a semiconductor pattern on a substrate, a gate insulating film to cover the semiconductor pattern, a gate electrode partially overlapping the semiconductor pattern with the gate insulating film therebetween, a hole in the gate electrode to expose the gate insulating film, an interlayer insulating film... Agent: Seyfarth Shaw, LLP

20070290212 - Silicon carbide and related wide-bandgap transistors on semi insulating epitaxy: A method of making a semi-insulating epitaxial layer includes implanting a substrate or a first epitaxial layer formed on the substrate with boron ions to form a boron implanted region on a surface of the substrate or on a surface of the first epitaxial layer, and growing a second epitaxial... Agent: Dla Piper US LLP Attn: Patent Group

20070290214 - Light emitting diode structure: A LED (Light Emitting Diode) structure with a contact layer of a multiple structure includes a nucleation layer disposed on a substrate; a conductive buffer layer disposed on the nucleation layer; an active layer disposed between an upper and a lower confinement layer, wherein the structure of active layer includes... Agent: Rosenberg, Klein & Lee

20070290213 - Light-emitting device, image forming apparatus, display device, and electronic apparatus: A light-emitting device includes: a substrate; a light reflection layer that is formed on the substrate and reflects light; a first electrode that is formed on the light reflection layer and transmits light; a light-emitting layer that is formed on the first electrode and emits light; a second electrode that... Agent: Oliff & Berridge, PLC

20070290215 - Light-emitting semiconductor device protected against reflector metal migration, and method of fabrication: An LED has a light-generating semiconductor region formed on a baseplate via a metal-made reflector layer. The light-generating semiconductor region has an active layer sandwiched between a pair of claddings of opposite conductivity types. An annular marginal space is left around the reflector layer between the light-generating semiconductor region and... Agent: Woodcock Washburn LLP

20070290216 - Semiconductor light emitting element, manufacturing method therefor, and compound semiconductor light emitting diode: A semiconductor light emitting element is provided with a transparent substrate for improving the optical extraction efficiency by using a transparent substrate. The semiconductor light emitting element includes a main body constructed of an n-Al0.6Ga0.4As current diffusion layer, an n-Al0.5In0.5P cladding layer, an AlGaInP active layer, a p-Al0.5In0.5P cladding layer,... Agent: Morrison & Foerster LLP

20070290217 - Solid state light sheet and bare die semiconductor circuits with series connected bare die circuit elements: An electronically active sheet includes a bottom substrate having a bottom electrically conductive surface. A top substrate having a top electrically conductive surface is disposed facing the bottom electrically conductive surface. An electrical insulator separates the bottom electrically conductive surface from the top electrically conductive surface. At least one bare... Agent: Michaud-duffy Group LLP

20070290221 - Light emitting diode and manufacturing method of the same: A light emitting diode includes a permanent substrate having a first portion and a second portion, and a chip attached on the first portion of the permanent substrate by a chip bonding technology. The chip includes at least one first electrode and a light emitting region. The manufacturing method comprises... Agent: Wpat, PC

20070290220 - Package for a light emitting diode and a process for fabricating the same: A package for an LED, comprises a metal substrate, at least one LED chip, and an insulative housing, wherein the metal substrate has a first terminal and a second terminal, and the first terminal is formed with a recess. The at least one LED chip is arranged in the recess... Agent: Rosenberg, Klein & Lee

20070290222 - Semiconductor light emitting device and method of fabricating the same: The present invention provides a flip chip semiconductor light-emitting device which includes a substrate and a semiconductor multi-layer structure. The semiconductor multi-layer structure has a first surface and a second surface in opposition to the first surface. The semiconductor multi-layer structure is bonded to the substrate by the first surface.... Agent: Birch Stewart Kolasch & Birch

20070290184 - Method for programming a multilevel phase change memory device: A method of programming a phase change device includes selecting a desired threshold voltage (Vth) and applying a programming pulse to a phase change material in the phase change device. The applying of the programming pulse includes applying a quantity of energy to the phase change material to drive at... Agent: Martine Penilla & Gencarella, LLP

20070290186 - Non-volatile variable resistance memory device and method of fabricating the same: A non-volatile variable resistance memory device and a method of fabricating the same are provided. The non-volatile variable resistance memory device may include a lower electrode, a buffer layer on the lower electrode, an oxide layer on the buffer layer and an upper electrode on the oxide layer. The buffer... Agent: Harness, Dickey & Pierce, P.L.C

20070290190 - Adapted led device with re-emitting semiconductor construction: An article includes an LED that has an emitting surface. A reemitting semiconductor structure has an emitting surface and converts light emitted by the LED to light of a different wavelength. At least one of the emitting surfaces frustrates total internal reflection.... Agent: 3m Innovative Properties Company

20070290193 - Field effect transistor devices and methods: A field-effect transistor device is provided, including: a substrate; a vertically stacked layered semiconductor structure on the substrate including the following layers: a first quantum well layer having laterally spaced-apart drain and source regions that are each delta-doped with a dopant of a first conductivity type, the drain and source... Agent: Martin Novack

20070290201 - Encapsulation for organic device: The present invention concerns a thin-film encapsulation structure for electronic devices with organic substances, especially OLEDs or other organic optoelectronic devices as well as corresponding components and a process for the production with a primary, inorganic barrier layer (5), which is directly arranged on the device or the surface to... Agent: Townsend And Townsend And Crew, LLP

20070290195 - Increased open-circuit-voltage organic photosensitive devices: A photosensitive device includes a first organic material and a second organic material forming a donor-acceptor heterojunction electrically connected between an anode and a cathode, where the first organic material and second organic material each have a Franck-Condon Shift of less than 0.5 eV. Preferably, one or both of the... Agent: Kenyon & Kenyon LLP

20070290194 - Method for cross-linking an organic semi-conductor: The present invention describes a novel method for crosslinking organic semiconductors and conductors by initiating this crosslinking in an autophotosensitised manner. It furthermore describes the production of organic electronic devices through the use of this crosslinking method. The properties of the electronic devices are thereby improved.... Agent: Connolly Bove Lodge & Hutz, LLP

20070290199 - Multi-functional copolymers comprising rare earth metal complexes and devices thereof: wherein [Ax-[B(C)]y-Dz] denotes a single unit of the copolymer complex that is repeated n times, wherein n is an integer greater than one, and wherein the single unit comprises a conjugated backbone coordinated to a complex (C) comprising rare earth metal(s); x, y and z are numbers greater than zero... Agent: James Remenick Novak Druce & Quigg, LLP

20070290196 - Organic light emitting display device and method for manufacturing the organic light emitting display device: An organic light emitting display device has thin film transistors. An organic thin film transistor (OTFT) is manufactured in one substrate and an organic light emitting diode (OLED) is manufactured on the other substrate, and the first substrate and second substrate are then positioned to face each other. The first... Agent: H.c. Park & Associates, PLC

20070290198 - P-alkoxyphenylen-thiophene oligomers as organic semiconductors for use in electronic devices: This invention provides phenylene-thiophene compounds that exhibit useful electronic properties such as high mobility and high on/off ratio. The invention also provides electronic devices incorporating these compounds. These devices include field effect transistors (FETs), thin film transistors (TFTs), display devices, light-emitting diodes, photovoltaic cells, photo-detectors, and memory cells. Further, the... Agent: E I Dupot De Nemours And Company Legal Patent Records Center

20070290197 - Photoactive nanocomposite and method for the production thereof: The invention concerns a photoactive nanocomposite (3) comprising at least one donor-acceptor couple of semiconductor elements. One of the elements is made of doped nanowires (7) with sp3 structure, and the other of the elements is an organic compound (8). The elements are supported by a device substrate (1). The... Agent: Young & Thompson

20070290200 - Thin film semiconductor device, method of manufacturing the same and display: A method of manufacturing a thin film semiconductor device is disclosed. The method includes the steps of: forming a light reflection and absorption layer for reflecting and absorbing light on a substrate; patterning the light reflection and absorption layer in a prescribed shape; forming an insulating film covering the patterned... Agent: Sonnenschein Nath & Rosenthal LLP

20070290203 - Semiconductor element and method of manufacturing the same: In one aspect, a semiconductor element may include a first substrate made of a N-type ZnO substrate, a P-type semiconductor layer provided on the first substrate, the P-type semiconductor layer having a nitride-based semiconductor, a lamination member provided on the P-type semiconductor layer, lamination member having a nitride-based semiconductor, and... Agent: Banner & Witcoff, Ltd. Attorneys For Client No. 000449, 001701

20070290208 - Semiconductor device and manufacturing method thereof: A semiconductor device includes a substrate having a first area and a second area adjacent to the first area, a first silicon layer provided on the substrate in the first area, a relaxed layer which is provided on the substrate in the second area and which has a lattice constant... Agent: Foley And Lardner LLP Suite 500

20070290207 - Semiconductor device and method for manufacturing semiconductor device: In a semiconductor device including a digital circuit portion and an analog circuit portion having a capacitor portion provided over a substrate, the capacitor portion is provided with a first wiring, a second wiring and a plurality of blocks each having a plurality of capacitor elements. Further, each the plurality... Agent: Eric Robinson

20070290209 - Display device: A display including a driving substrate is provided. Arrayed on the driving substrate is a plurality of pix