Active solid-state devices (e.g., transistors, solid-state diodes) inventions 06/07

20070145345 - Non-volatile switching element, method for manufacturing the same, and integrated circuit having non-volatile switching elements: The present invention provides a non-volatile switching element having a novel structure that operates at a high speed and enables high integration, and an integrated circuit that includes such non-volatile switching elements. The switching element includes: a switching film formed on a substrate, made of a material causing a 10... Agent: Oblon, Spivak, Mcclelland, Maier & Neustadt, P.C.

20070145344 - Resistance-change nanocrystal memory: A resistance-change nanocrystal memory is proposed, which includes at least one memory unit. The memory unit further includes a channel and nanocrystals embedded in the channel. Electric charges in the nanocrystals are accessed, by applying a voltage to the channel. Then, conductivity of the channel is altered by the electric... Agent: Birch Stewart Kolasch & Birch

20070145348 - Quantum information processing device and method: Quantum information processing device includes resonator incorporating material containing physical systems, each of physical systems having at least four energy states, transition between two energy states of at least four energy states, and transition energy between at least two energy states of at least four energy states, at least four... Agent: Oblon, Spivak, Mcclelland, Maier & Neustadt, P.C.

20070145382 - Semiconductor light emitting diode and method for manufacturing the same: A high-efficiency semiconductor light emitting diode and a method for manufacturing the same are provided. The semiconductor LED has high internal quantum efficiency and can reduce the bad effect caused by the crystal defect. In the semiconductor light emitting diode, a conductive substrate has a three-dimensional top surface, and a... Agent: Mcdermott Will & Emery LLP

20070145390 - Nitride-based semiconductor device: A nitride-based semiconductor device includes a diode provided on a semiconductor substrate. The diode contains a first nitride-based semiconductor layer made of non-doped AlXGa1-XN (0≦X<1); a second nitride-based semiconductor layer made of non-doped or n-type AlYGa1-YN (0≦Y≦1, X<Y) having a lattice constant smaller than that of the first nitride-based semiconductor... Agent: Oblon, Spivak, Mcclelland, Maier & Neustadt, P.C.

20070145391 - Vertical type nitride semiconductor light emitting device and method of manufacturing the same: A vertical nitride semiconductor light emitting device and a manufacturing method thereof are provided. In the device, an ohmic contact layer, a p-type nitride semiconductor layer, an active layer, an n-type nitride semiconductor layer and an n-electrode are sequentially formed on a conductive substrate. At least one of a surface... Agent: Mcdermott Will & Emery LLP

20070145393 - Light emitting device package and method of manufacturing the same: A light emitting device package including a transparent cover having an electrode pattern formed on a bottom surface thereof; a light emitting device installed below the transparent cover and electrically connected to an external circuit via the electrode pattern; a fixing resin which fixes the light emitting device onto the... Agent: Sughrue Mion, PLLC

20070145395 - Light emitting module and surface light source device: A light emitting module including a light source set and a light guide member is provided. The light source set is suitable for providing a light and the light guide member is disposed above the light source set. The light guide member has a top surface, an opposite light incident... Agent: Jianq Chyun Intellectual Property Office

20070145394 - Semiconductor light-emitting material and light emitting device: A semiconductor light-emitting material includes a semiconductor substance including a matrix semiconductor whose constituent atoms are bonded to form a tetrahedral structure, an impurity atom S substituted for an atom in a lattice site of the matrix semiconductor, and an impurity atom I inserted in a interstitial site of the... Agent: Oblon, Spivak, Mcclelland, Maier & Neustadt, P.C.

20070145346 - Connection electrode for phase change material, associated phase change memory element, and associated production process: The present disclosure relates to a connection electrode for phase change materials, to an associated phase change memory element and to an associated production process, wherein a plurality of separate insulation regions are formed in an electrode material at least at a connection surface. This reduces the overall size of... Agent: Brinks Hofer Gilson & Lione Infineon

20070145347 - Coupled quantum well devices (cqwd) containing two or more direct selective contacts and methods of making same: The present invention relates to a device structure that contains two or more conducting layers, two peripheral insulating layers, one or more intermediate insulating layers, and two or more conductive contacts. The two or more conducting layers are sandwiched between the two peripheral insulating layers, and they are spaced apart... Agent: Scully Scott Murphy & Presser, PC

20070145350 - Display apparatus: A display apparatus that includes: a plurality of light-emitting devices disposed on a substrate with an accumulation of, in this or inverse order, a light transmissive electrode layer, a functional layer including a light-emitting layer, and an opposing electrode layer; and a color conversion layer that is provided on a... Agent: Robert J. Depke Lewis T. Steadman

20070145349 - Light emitting device: A light emitting device includes a first light emitting diode (LED) emitting a first light emission of at least a first wavelength, and a second light emitting diode emitting a second light emission of at least a second wavelength. The second LED is placed in close proximity to the first... Agent: Alexander R Schlee SchleeIPInternational P.C.

20070145351 - Semiconductor device with anisotropy-relaxed quantum dots: A semiconductor quantum dot device includes: an inclined InP substrate whose principal surface normal is inclined from a [0 0 1] direction to a [1 −1 0] direction in a (0 0 1) plane; and semiconductor quantum dots made of InAs1-xSbx (0<x<1) and disposed above the principal surface of the... Agent: Armstrong, Kratz, Quintos, Hanson & Brooks, LLP

20070145356 - Carbon nanotube interdigitated sensor: A carbon nanotube sensor (30), for determining the degree of the presence of an unwanted environmental agent, includes a plurality of carbon nanotubes (18). The sensor (30) comprises first and second conducting layers (32, 34) having alternatively interdigitated fingers (36, 38). The plurality of carbon nanotubes (18) having a material... Agent: Ingrassia Fisher & Lorenz, P.C.

20070145355 - Doped organic semiconductor material: The present invention relates to a doped organic semiconductor material comprising an organic matrix material which is doped with at least one heteromonocyclic and/or heteropolycyclic compound, the compound having at least one nitrogen atom with a free electron pair.... Agent: Sutherland Asbill & Brennan LLP

20070145352 - Endohedral fullerene derivative, proton conductor and fuel cell: With regard to a solid polymer based fuel cell, an electrolyte membrane for conducting proton between a fuel electrode and an air electrode is conventionally made from a material obtained by chemically modifying a hollow fullerene such as C60 by means of a proton dissociable group. However, this fuel cell... Agent: Young & Thompson

20070145359 - Materials for organic thin film transistors: The invention provides organic thin film transistors including quinacridone derivatives with formula (I). These OTFTs are useful in making flat panel displays, photovoltaic devices and sensors. In the present invention, the disclosed quinacridone derivatives exhibit as p-type organic semiconductors in OTFTs.... Agent: Cooper & Dunham, LLP

20070145360 - Organic electronic device having dual emitter dopants: Electronic devices comprising an anode, buffer layer, hole transport layer, photoactive layer, electron transport layer, electron injection layer, and cathode are provided, where the photoactive layer comprises a dual dopant in a metallic complex. The dopants are selected so that their emitting wavelengths are essentially the same, while their ionization... Agent: E I Du Pont De Nemours And Company Legal Patent Records Center

20070145361 - Organic semiconductor material and organic electronic device: An organic semiconductor material comprising a compound which has a generalized porphyrin skeleton and which has a molecular structure such that the distance from the generalized porphyrin ring plane to the center of each atom forming the generalized porphyrin skeleton, is not more than 1 Å... Agent: Oblon, Spivak, Mcclelland, Maier & Neustadt, P.C.

20070145354 - Organic thin-film transistors: A novel barrier layer which protects electronic devices from adverse environmental effects such as exposure to light, especially white light, is described. The barrier layer comprises a copolymer having an acrylate unit and an acrylate unit with a pendant dye group. Also disclosed are processes for producing such electronic devices.... Agent: Richard M. Klein, Esq. Fay, Sharpe, Fagan, Minnich & Mckee, LLP

20070145353 - Phenanthroline derivative and light emitting element and light emitting device using the same: An aspect of the present invention is an electron injecting material represented by a general formula (2). In the general formula (2), R6 is selected from the group consisting of an alkyl group having 1 to 4 carbon atoms, an alkenyl group having 1 to 4 carbon atoms, and an... Agent: Cook, Alex, Mcfarron, Manzo, Cummings & Mehler Ltd

20070145357 - Thin-film transistor: There is provided herein a performance-enhancing composition comprising inorganic nanoparticles dispersed in a polymer selected from the group consisting of polysiloxane, polysilsesquioxane, and mixtures thereof. This composition, when applied to a thin-film transistor, such as a bottom-gate thin-film transistor, as an overcoat or top layer, improves the carrier mobility and... Agent: Richard M. Klein, Esq. Fay, Sharpe, Fagan, Minnich & Mckee, LLP

20070145358 - Transparent conductor and transparent conductive material: The transparent conductor of the present invention comprises a conductive layer containing a conductive particle, a binder, a polymerization initiator, and a radical scavenger. In the transparent conductor of the present invention, the conductive layer contains the radical scavenger in addition to the conductive particle. Therefore, even when the conductive... Agent: Oliff & Berridge, PLC

20070145362 - Passive electronic devices: A passive electronic device includes layers of a layered structure on a support surface. The device can include a first layer part that includes electrically conductive or semiconductive material and that has a contact surface. The device can also include second layer parts that include electrically conductive material and are... Agent: Leading Edge Law Group, PLC/xerox-parc

20070145365 - Image sensor: Embodiments relate to and image sensor. In embodiments, the image sensor may include a semiconductor substrate, a photodiode region, a gate electrode, a dummy gate, and an interlayer dielectric layer. The semiconductor substrate includes a field oxide layer. The photodiode region may be formed on the semiconductor substrate. The gate... Agent: Sherr & Nourse, PLLC

20070145366 - Semiconductor structures: A method and a structure are provided for preventing lift-off of a semiconductor monitor pattern from a substrate . A semiconductor structure and a semiconductor monitor structure are formed on a substrate. A material layer is formed covering the semiconductor monitor structure. A part of the semiconductor structure is removed... Agent: Duane Morris LLPIPDepartment (tsmc)

20070145364 - Test pattern for analyzing delay characteristic of interconnection line and method for analyzing delay characteristic of interconnection line using the same: A test pattern for analyzing a delay characteristic of an interconnection line and a method of analyzing a delay characteristic of an interconnection line using the test pattern are provided. The test pattern for analyzing a delay characteristic of an interconnection line includes: a first metal line formed as a... Agent: Saliwanchik Lloyd & Saliwanchik A Professional Association

20070145363 - Testing memory integrated circuits: A memory device may include a controller and a plurality of flash memory dice. The controller is provided for read and write access and communications with a host. However, the controller may also be utilized to test one or more of the flash memory dice mounted on the device. In... Agent: Trop Pruner & Hu, PC

20070145367 - Three-dimensional integrated circuit structure: The preferred embodiments of the present invention provide a three-dimensional (3D) semiconductor structure and a method of forming the same. The 3D semiconductor structure includes a first substrate bonded to a second substrate. The first substrate includes substantially all NMOS devices. The second substrate includes substantially all PMOS devices. The... Agent: Slater & Matsil, L.L.P.

20070145368 - Two-frequency switchover type crystal oscillator: The present invention relates to a two-frequency switchover type crystal oscillator in which first and second IC chips and first and second crystal resonators are connected to wiring patterns of a circuit substrate to form first and second oscillation circuits, and the first and second oscillation circuits are selectively operated... Agent: Edwards Angell Palmer & Dodge LLP

20070145369 - Array substrate for liquid crystal display device and method of fabricating the same: An array substrate for a liquid crystal display device includes a substrate having a display area and a driving circuit area, a first semiconductor layer formed on the substrate in the display area, the first semiconductor layer having an active region and source and drain regions at opposing sides of... Agent: Morgan Lewis & Bockius LLP

20070145370 - Electro-optic device, method for manufacturing the same, and electronic apparatus: An electro-optic device includes data lines and scanning lines extending to cross each other on a substrate, pixel electrodes disposed on the substrate for respective pixels defined corresponding to the data lines and the scanning lines in a plan view of the substrate, thin film transistors electrically connected to the... Agent: Oliff & Berridge, PLC

20070145373 - Epitaxial imprinting: The present invention provides an epitaxial imprinting process for fabricating a hybrid substrate that includes a bottom semiconductor layer; a continuous buried insulating layer present atop said bottom semiconductor layer; and a top semiconductor layer present on said continuous buried insulating layer, wherein said top semiconductor layer includes separate planar... Agent: Scully, Scott, Murphy & Presser, P.C.

20070145372 - Semiconductor device, and electronic apparatus: An object of the present invention is to provide a technique for improving characteristics of a TFT and realizing the structure of the TFT optimal for driving conditions of a pixel section and a driving circuit, using a smaller number of photo masks. A semiconductor device has a semiconductor film,... Agent: Nixon Peabody, LLP

20070145371 - Thin-film transistor: A thin-film transistor, such as a top-gate thin-film transistor, is provided herein. The thin-film transistor has a performance-enhancing layer, such as a performance-enhancing bottom layer, comprising a polymer other than a polyimide. In specific embodiments, the polymer is selected from the group consisting of polysiloxane, polysilsesquioxane, and mixtures thereof. In... Agent: Richard M. Klein, Esq. Fay, Sharpe, Fagan, Minnich & Mckee, LLP

20070145374 - Thin film transistor for display panel: A thin film transistor substrate includes a base substrate, a gate electrode, a gate insulating layer, a surface treating layer, an active layer, a source electrode and a drain electrode. The gate electrode is formed on the base substrate. The gate insulating layer is formed on the base substrate to... Agent: Macpherson Kwok Chen & Heid LLP

20070145375 - Method of manufacturing nanowire, method of manufacturing a semiconductor apparatus including nanowire and semiconductor apparatus formed from the same: A method of manufacturing a nanowire, a method of manufacturing a semiconductor apparatus including a nanowire and a semiconductor apparatus formed from the same are provided. The method of manufacturing a semiconductor apparatus may include forming a material layer pattern on a substrate, forming a first insulating layer on the... Agent: Harness, Dickey & Pierce, P.L.C

20070145376 - Gallium nitride crystal substrate, semiconductor device, method of manufacturing semiconductor device, and method of identifying gallium nitride crystal substrate: Affords GaN crystal substrates that can reduce the occurring of cracks and fractures in the GaN crystal substrates when the semiconductor devices are manufactured, semiconductor devices including them, methods of manufacturing the semiconductor devices, and methods of identifying the GaN crystal substrates. A gallium nitride crystal substrate has a surface... Agent: Judge & MurakamiIPAssociates

20070145377 - Semiconductor device and method for manufacturing same: A semiconductor device of a double diffused MOS structure employing a silicon carbide semiconductor substrate. The semiconductor device comprises a silicon carbide semiconductor epitaxial layer provided on a surface of the silicon carbide semiconductor substrate and having a first conductivity which is the same conductivity as the silicon carbide semiconductor... Agent: Rabin & Berdo, PC

20070145378 - Silicon carbide bipolar junction transistors having a silicon carbide passivation layer on the base region thereof, and methods of fabricating same: A bipolar junction transistor (BJT) includes a silicon carbide (SiC) collector layer of first conductivity type, an epitaxial silicon carbide base layer of second conductivity type on the silicon carbide collector layer, and an epitaxial silicon carbide emitter mesa of the first conductivity type on the epitaxial silicon carbide base... Agent: Myers Bigel Sibley & Sajovec

20070145383 - High luminance light emitting diode and liquid crystal display device using the same: A light emitting diode (LED) is provided with a base substrate, a plurality of light emitting chips disposed on the upper surface of the base substrate and electrically coupled in parallel to one another, and a fluorescent material layer for covering the light emitting chips.... Agent: Macpherson Kwok Chen & Heid LLP

20070145384 - Iii-nitride light emitting device with double heterostructure light emitting region: In a device, a III-nitride light emitting layer is disposed between an n-type region and a p-type region. A first spacer layer, which is disposed between the n-type region and the light emitting layer, is doped to a dopant concentration between 6×1018 cm3 and 5×1019 cm−3. A second spacer layer,... Agent: Patent Law Group LLP

20070145380 - Low optical loss electrode structures for leds: An electrode structure is disclosed for enhancing the brightness and/or efficiency of an LED. The electrode structure can have a metal electrode and an optically transmissive thick dielectric material formed intermediate the electrode and a light emitting semiconductor material. The electrode and the thick dielectric cooperate to reflect light from... Agent: Macpherson Kwok Chen & Heid LLP

20070145379 - Optimized contact design for thermosonic bonding of flip-chip devices: A light emitting device (A) includes a semiconductor die (100). The semiconductor die includes: an epitaxial structure (120) arranged on a substrate (160), the epitaxial structure forming an active light generating region (140) between a first layer (120n) on a first side of the active region and having a first... Agent: Fay Sharpe LLP

20070145386 - Semiconductor light emitting device and method of manufacturing the same: Provided are a semiconductor light emitting device having a nano pattern and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes: a semiconductor layer comprising a plurality of nano patterns, wherein the plurality of nano patterns are formed inside the semiconductor layer; and an... Agent: Buchanan, Ingersoll & Rooney PC

20070145385 - Semiconductor light emitting device and semiconductor light emitting apparatus: A first semiconductor light emitting device comprises: a transparent substrate; a light emitting layer; and a roughened region. The transparent substrate has a first major surface and a second major surface, and is translucent to light in a first wavelength band. The light emitting layer is selectively provided in a... Agent: Oblon, Spivak, Mcclelland, Maier & Neustadt, P.C.

20070145381 - Semiconductor light-emitting device: A light-emitting diode has: a substrate; a light-emitting layer having a first conductivity type cladding layer, an active layer, and a second conductivity type cladding layer stacked sequentially on a front side of the substrate; a first current-blocking portion partially formed in the middle on the light-emitting layer; a current-conducting... Agent: Mcginn Intellectual Property Law Group, PLLC

20070145387 - Led housing and fabrication method thereof: The invention relates to an LED housing and its fabrication method. In the LED housing, a heat conducting part has a chip mounting area, a heat connecting area opposed to the chip mounting area and a groove formed adjacent to the heat connecting area. An electrical connecting part has a... Agent: Lowe Hauptman Berner, LLP

20070145388 - Semiconductor component: A surface emitting semiconductor component (1) with an emission direction which comprises a semiconductor body (2). The semiconductor body comprises a plurality of active regions (4a, 4b) which are suitable for the generation of radiation and are arranged in a manner spaced apart from one another, a frequency-selective element (6)... Agent: Cohen Pontani Lieberman & Pavane LLP

20070145389 - Light emitting device: A light emitting device firstly includes a light emitting diode (LED) structure, having a top surface with a light emitting region. The device also has a heterojunction within the device structure, the heterojunction having a p-type and an n-type semiconductor layer, and a plurality of electrodes positioned on the top... Agent: Alexander R Schlee SchleeIPInternational P.C.

20070145392 - Light emitting devices having current blocking structures and methods of fabricating light emitting devices having current blocking structures: Light emitting devices and methods of fabricating light emitting devices having a current blocking mechanism below the wire bond pad are provided. The current blocking mechanism may be a reduced conduction region in an active region of the device. The current blocking mechanism could be a damage region of a... Agent: Myers Bigel Sibley & Sajovec, P.A.

20070145397 - High efficiency light emitting diode (led): An (Al, Ga, In)N light emitting diode (LED), wherein light extraction from chip and/or phosphor conversion layer is optimized. By novel shaping of LED and package optics, a high efficiency light emitting diode is achieved.... Agent: Gates & Cooper LLP Howard Hughes Center

20070145398 - Light emission diode and method of fabricating thereof: Provided is a light emission diode package and a fabricating method thereof. The light emission diode package includes a heat sink having a groove, a printed circuit board on the heat sink, a light emission diode on the groove, a reflector coupled to the heat sink, a lead frame included... Agent: Birch Stewart Kolasch & Birch

20070145399 - Light emitting diode package: An LED package is improved in heat radiating performance. The LED package includes a package substrate having heat radiating means; a heat radiating layer arranged on the package substrate with an area at least larger than a mounting area of a light emitting diode chip to provide a horizontal heat... Agent: Mcdermott Will & Emery LLP

20070145402 - Semiconductor component which emits radiation, and method for producing the same: This invention describes a radiation-emitting semiconductor component with the a multilayered structure that contains a radiation-emitting active layer, and a window transparent to radiation that has a first principal face and a second principal face opposite the first principal face, and whose first principal face adjoins the multilayered structure. At... Agent: Fish & Richardson PC

20070145400 - Semiconductor device and method for manufacturing the same: There is provided a semiconductor device mounted with a light emitting element, which can be downsized easily, improve light emitting efficiency and be formed easily, and a method for manufacturing the semiconductor device effectively. The semiconductor device includes a substrate, a light emitting element mounted on the substrate by flip... Agent: Drinker Biddle & Reath (dc)

20070145396 - Semiconductor light emitting device and method of manufacturing the same: A semiconductor light emitting device having high reflectivity and a high electrical contact property between a light reflection layer and a semiconductor layer is provided. The semiconductor light emitting device is formed by laminating a semiconductor layer, a light reflection layer and a protective layer on a substrate in this... Agent: Sonnenschein Nath & Rosenthal LLP

20070145401 - Semiconductor light emitting device, semiconductor element, and method for fabricating the semiconductor light emitting device: In the semiconductor light emitting device of the present invention, a reflective layer for reflecting light emitted by a semiconductor light emitting element is formed on a Cu wiring pattern, and a bonding section is formed on a light-emitting-element-mounting area on the Cu wiring pattern, to which an electrode of... Agent: Morrison & Foerster LLP

20070145403 - Luminescent device and method for manufacturing the same: A luminescent device including a die pad lead composed of an inner lead and an outer lead, a case for uniting the inner lead, a light emitting diode chip mounted on a first predetermined position of one main surface of the inner lead, and a transparent sealing material portion for... Agent: Oblon, Spivak, Mcclelland, Maier & Neustadt, P.C.

20070145404 - Semicondcutor device and manufacturing method of semiconductor device: A semiconductor device made by mounting a light emitting element on a substrate, where an optically-transparent cover with a flat plate shape is installed on the light emitting element and a groove part for suppressing reflection of light emission of the light emitting element is formed in the cover.... Agent: Drinker Biddle & Reath (dc)

20070145406 - Nitride semiconductor light emitting device: Disclosed herein is a nitride semiconductor light emitting device, which is improved in luminance and reliability. The light emitting device, comprises an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially formed on a substrate, an n-side electrode formed on a portion of an upper... Agent: Mcdermott Will & Emery LLP

20070145405 - Light emitting device and method of fabricating the same: Disclosed is a light-emitting device (100) has a light-emitting layer portion (24) which is composed of a group III-V compound semiconductor and a transparent thick-film semiconductor layer (90) with a thickness of not less than 40 μm which is formed on at least one major surface side of the light-emitting... Agent: Snider & Associates

20070145408 - Hf control bidirectional switch: An HF control bi-directional switch component of the type having its gate referenced to the rear surface formed in the front surface of a peripheral well of the component, including two independent gate regions intended to be respectively connected to terminals of a transformer having a midpoint connected to the... Agent: Stmicroelectronics Inc. C/o Wolf, Greenfield & Sacks, P.C.

20070145407 - Thyristor and method of manufacture: A thyristor and a method for manufacturing the thyristor that includes a gate region extending from the first major surface into a semiconductor substrate and an anode region extending from the second major surface into the semiconductor substrate. A cathode region extends into a portion of the gate region. Optionally,... Agent: Semiconductor Components Industries, LLC Bradley J. Botsch

20070145409 - Five channel fin transistor and method for fabricating the same: A semiconductor device comprises a substrate defining a recessed active region; a fin active region connected to the recessed active region and extending above the recessed active region. The fin active region includes first, second, third, fourth, and fifth sides, the first and second sides being proximate the recessed active... Agent: Townsend And Townsend And Crew, LLP

20070145410 - Jfet with drain and/or source modificaton implant: The present invention provides a JFET which receives an additional implant during fabrication, which extends its drain region towards its source region, and/or its source region towards its drain region. The implant reduces the magnitude of the e-field that would otherwise arise at the drain/channel (and/or source/channel) junction for a... Agent: Koppel, Patrick & Heybl

20070145411 - Trench polysilicon diode: Embodiments of the present invention include a method of manufacturing a trench polysilicon diode. The method includes forming a N− (P−) type epitaxial region on a N+ (P+) type substrate and forming a trench in the N− (P−) type epitaxial region. The method further includes forming a insulating layer in... Agent: Wagner, Murabito & Hao LLP Third Floor

20070145412 - Heterojunction bipolar transistor and manufacturing method thereof: The object of the present invention is to provide a heterojunction bipolar transistor with high breakdown tolerance which can be manufactured at a high reproducibility and a high yield, the heterojunction bipolar transistor includes: a sub-collector layer; a collector layer formed on the sub-collector layer; a base layer formed on... Agent: Greenblum & Bernstein, P.L.C

20070145413 - Isolated power domain core regions in platform asics: A platform application specific integrated circuit (ASIC) including a base layer. The base layer generally comprises a predefined input/output (I/O) region and a predefined core region. The predefined input/output (I/O) region may comprise a plurality of pre-diffused regions disposed in the platform ASIC. The predefined core region may comprise one... Agent: Lsi Logic Corporation

20070145414 - Ultrafast recovery diode: An ultrafast recovery diode. In a first embodiment, a rectifier device comprises a substrate of a first polarity, a lightly doped layer of the first polarity coupled to the substrate and a metallization layer disposed with the lightly doped layer. The ultrafast recovery diode includes a plurality of wells, separated... Agent: Morgan, Lewis & Bockius, LLP.

20070145418 - Devices without current crowding effect at the finger's ends: ESD protection devices without current crowding effect at the finger's ends. It is applied under MM ESD stress in sub-quarter-micron CMOS technology. The ESD discharging current path in the NMOS or PMOS device structure is changed by the proposed new structures, therefore the MM ESD level of the NMOS and... Agent: Birch Stewart Kolasch & Birch

20070145417 - High voltage semiconductor device having a lateral channel and enhanced gate-to-drain separation: A semiconductor device having a lateral channel with contacts on opposing surfaces thereof. The semiconductor device includes a conductive substrate having a source contact covering a substantial portion of a bottom surface thereof. The semiconductor device also includes an isolation layer above the conductive substrate, a lateral channel above the... Agent: Slater & Matsil, L.L.P.

20070145415 - High-frequency semiconductor device: A semiconductor device operating at a frequency between 0.8 GHz and 300 GHz includes an active region that is positioned on a semi-insulating GaAs substrate; a gate electrode that is positioned in the active region; and a source electrode and a drain electrode that are positioned on the surface of... Agent: Leydig Voit & Mayer, Ltd

20070145416 - Semiconductor device: A semiconductor device comprises on a surface of a first semiconductor layer of the first conduction type a second semiconductor layer of the first conduction type. A semiconductor base layer of the second conduction type is formed on the second semiconductor layer, and a semiconductor diffusion layer of the first... Agent: Oblon, Spivak, Mcclelland, Maier & Neustadt, P.C.

20070145419 - Method of manufacturing cmos image sensor: A CMOS image sensor and a method of manufacturing the same are provided. The method is capable of reducing a distance between a micro-lens and a photodiode and simplifying the manufacturing process for the CMOS image sensor. In an embodiment, the interlayer dielectric layers of high level metal lines (e.g.... Agent: Saliwanchik Lloyd & Saliwanchik A Professional Association

20070145420 - Semiconductor device: The invention provides a semiconductor device that solves a problem of reflection of a pattern of a wiring formed on a back surface of a semiconductor substrate on an output image. A reflection layer is formed between a light receiving element and a wiring layer, that reflects an infrared ray... Agent: Morrison & Foerster LLP

20070145421 - Circuit and method for controlling internal voltage of semiconductor memory apparatus: A circuit for controlling an internal voltage of a semiconductor memory apparatus including a deep power down signal input unit, which receives a deep power down signal indicating that a deep power down mode is starting, and supplies the received signal to a level shifter; and one or more level... Agent: Venable LLP

20070145422 - Cmos image sensor and manufacturing method thereof: A CMOS image sensor and method of manufacturing same is provided. The CMOS image sensor can include: photodiodes formed on a semiconductor substrate for generating a charge according to an amount of incident light; a first planarization layer formed on the semiconductor substrate; a plurality of color filter layers formed... Agent: Saliwanchik Lloyd & Saliwanchik A Professional Association

20070145425 - Cmos image sensor: Embodiments relate to a complementary metal oxide semiconductor (CMOS) image sensor. According to embodiments, the CMOS image sensor may include a semiconductor substrate, an interlayer insulating layer, a color filter layer, an overcoat layer, and a plurality of microlenses. The semiconductor substrate may include a plurality of photodiodes and transistors... Agent: Sherr & Nourse, PLLC

20070145423 - Cmos image sensor and manufacturing method thereof: A CMOS (complementary metal oxide semiconductor) image sensor and method of fabricating the same is provided. The CMOS image sensor can include: a semiconductor substrate in which an active region and a device isolation region are defined; a photodiode region including a first region and a second region extending from... Agent: Saliwanchik Lloyd & Saliwanchik A Professional Association

20070145424 - Image sensor, controlling method of the same, x-ray detector and x-ray ct apparatus: The present invention provides always stably sampling a high quality image irrespective of the displacement of a subject, with a simpler arrangement. The image sensor in accordance with the present invention includes a plurality of photodiodes arranged in a two-dimensional array and a plurality of read out gate circuits for... Agent: Patrick W. Rasche Armstrong Teasdale LLP

20070145426 - Image sensor: Embodiments relate to an image sensor. In embodiments, the image sensor may include a semiconductor substrate formed with a plurality of photodiodes, an interlayer dielectric layer formed on the semiconductor substrate, a color filter layer formed on the interlayer dielectric layer, a planar layer formed on the color filter layer,... Agent: Sherr & Nourse, PLLC

20070145427 - Solid-state image sensor: A solid-state image sensor capable of suppressing generation of cross talk or a dark current and improving transfer efficiency of electrons (signal charge) can be obtained. This solid-state image sensor includes a plurality of pixels and a transfer gate electrode arranged in each of the plurality of pixels. An OFF-state... Agent: Ditthavong Mori & Steiner, P.C.

20070145428 - Isolation trench of a semiconductor device: Embodiments relate to a method for forming an isolation trench of a semiconductor device. In embodiments, a method for forming an isolation trench of a semiconductor device may include forming a mask layer pattern on a semiconductor substrate, forming an organic material layer on the semiconductor substrate and the mask... Agent: Sherr & Nourse, PLLC

20070145429 - Structure and method for a fast recovery rectifier structure: An apparatus and method for a fast recovery rectifier structure. Specifically, the structure includes a substrate of a first dopant. A first epitaxial layer lightly doped with the first dopant is coupled to the substrate. A first metallization layer is coupled to the first epitaxial layer. A plurality of trenches... Agent: Morgan, Lewis & Bockius, LLP.

20070145431 - Fin-fet having gaa structure and methods of fabricating the same: Example embodiments of the present invention relate to a semiconductor device and methods of fabricating the same. Other example embodiments of the present invention relate to a fin-field effect transistor (Fin-FET) having a fin-type channel region and methods of fabricating the same. A Fin-FET having a gate all around (GAA)... Agent: Harness, Dickey & Pierce, P.L.C

20070145430 - Cmos device with asymmetric gate strain: The use of strained gate electrodes in integrated circuits results in a transistor having improved carrier mobility, improved drive characteristics, and reduced source drain junction leakage. The gate electrode strain is obtained through non symmetric placement of stress inducing structures as part of the gate electrode. Silicon nitride layers may... Agent: Schwegman, Lundberg, Woessner & Kluth, P.A.

20070145435 - Mos varactor: Embodiments relate to a MOS varactor and a method for manufacturing the same, in which an ion implantation process for adjusting a threshold voltage may be omitted so as to lower the surface density of an N type well, thereby expanding a tuning range. The MOS varactor may include a... Agent: Sherr & Nourse, PLLC

20070145432 - Semiconductor device: Embodiments relate to a semiconductor device that may include a gate stack formed on an upper portion of an active region in a semiconductor substrate, the gate stack including a gate insulating layer and a gate, a first shallow impurity region formed on both sides of the gate in the... Agent: Sherr & Nourse, PLLC

20070145433 - Semiconductor device: Embodiments relate to a semiconductor device and a method for manufacturing the same. According to embodiments, a semiconductor device may include an active area defined on a semiconductor substrate by a first isolation layer and a second isolation layer, a diode in the active area placed at one side of... Agent: Sherr & Nourse, PLLC

20070145434 - Semiconductor device: Embodiments relate to a method for manufacturing a semiconductor substrate. According to embodiments, a gate oxide layer may be formed on a semiconductor substrate. Also, a well region may be formed in the semiconductor substrate including the gate oxide layer. Then, after forming a gate electrode on the semiconductor substrate,... Agent: Sherr & Nourse, PLLC

20070145436 - Thin film transistor substrate of liquid crystal display and method for fabricating same: An exemplary thin film transistor substrate (200) includes a substrate (201), a gate (212), a gate insulating layer (203), an amorphous silicon layer (214), a pixel electrode (216), a drain (217), and a source (218). The gate is formed at the gate. The gate insulating layer is formed at the... Agent: Wei Te Chung Foxconn International, Inc.

20070145437 - Image sensor and method of manufacturing the same: An image sensor may include at least one of: a semiconductor substrate including a plurality of photodiodes and a pad section; a protective layer formed over a semiconductor substrate including a trench pattern; an interlayer dielectric layer formed over a cell area of a protective layer; a color filter layer... Agent: Sherr & Nourse, PLLC

20070145438 - Pixel sensor cell having reduced pinning layer barrier potential and method thereof: A pixel sensor cell structure and method of manufacture. The pixel cell comprises a doped layer formed adjacent to a first side of a transfer gate structure for coupling a collection well region and a channel region. Potential barrier interference to charge transfer caused by a pinning layer is reduced.... Agent: Ibm Microelectronics Intellectual Property Law

20070145442 - Cmos image sensor: Embodiments relate to a vertical-type CMOS image sensor, a method of manufacturing the same, and a method of gettering the same, in which source and drain regions are expanded to improve grounding and gettering effects. In embodiments, the vertical-type CMOS image sensor may include a silicon substrate, a first photodiode... Agent: Sherr & Nourse, PLLC

20070145440 - Cmos image sensor and method for fabricating the same: A CMOS image sensor and a method of fabricating the same are provided. The CMOS image sensor includes a semiconductor substrate having a photodiode region and a transistor region defined therein, first and second gate electrodes formed on the photodiode region of the semiconductor substrate with a gate insulating layer... Agent: Saliwanchik Lloyd & Saliwanchik A Professional Association

20070145439 - Cmos image sensor and method for manufacturing the same: A CMOS image sensor and method of manufacturing the same are provided. In one embodiment, the CMOS image sensor includes: an interlayer dielectric layer formed on a semiconductor substrate including a plurality of photodiodes and transistors; a plurality of color filter isolation layers formed on the interlayer dielectric layer; a... Agent: Saliwanchik Lloyd & Saliwanchik A Professional Association

20070145441 - Cmos image sensor and method for manufacturing the same: Provided is a CMOS image sensor. The CMOS image sensor can include a semiconductor substrate, a blue photodiode region, a red photodiode region, a green photodiode region, an overcoat layer, and microlenses. The substrate can have a first photodiode region, a second photodiode region, and a transistor region. The blue... Agent: Saliwanchik Lloyd & Saliwanchik A Professional Association

20070145444 - Cmos image sensor and method for manufacturing the same: Disclosed are a CMOS image sensor and a method for manufacturing the same. The CMOS image sensor includes a photodiode area and a floating diffusion area formed on a semiconductor substrate, a transistor formed on the semiconductor substrate between the photodiode area and the floating diffusion area, an isolation layer... Agent: Saliwanchik Lloyd & Saliwanchik A Professional Association

20070145443 - Cmos image sensor and method of manufacturing the same: A CMOS image sensor is provided. The CMOS image sensor includes: a photodiode region formed in an active region of a substrate; a transistor formed on a transistor region of the active region of the substrate; a low-concentration diffusion region formed on the photodiode region while being spaced apart from... Agent: Saliwanchik Lloyd & Saliwanchik A Professional Association

20070145446 - Cmos image sensor: A CMOS image sensor includes a photodiode, and a plurality of transistors for transferring charges accumulated at the photodiode to one column line, wherein at least one transistor among the plurality of transistors has a source region wider than a drain region, for increasing a driving current.... Agent: Morgan Lewis & Bockius LLP

20070145445 - Cmos image sensor and method for manufacturing the same: A method for manufacturing a CMOS image sensor is provided. The method includes: forming a photodiode on a semiconductor sustrate; forming a color filter layer on the photodiode; forming a planar layer on the color filter layer; forming a first microlens on the planar layer; and forming a second microlens... Agent: Saliwanchik Lloyd & Saliwanchik A Professional Association

20070145447 - Pixel and cmos image sensor including the same: A pixel which may prevent the voltage of a floating diffusion region of the pixel from being outside a desired or predetermined driving voltage range by adjusting the equivalent capacitance of the floating diffusion region may be provided. The pixel may include a photodiode which may convert light energy into... Agent: Harness, Dickey & Pierce, P.L.C

20070145449 - Capacitor to be incorporated in wiring substrate, method for manufacturing the capacitor, and wiring substrate: A wiring substrate in which a capacitor is provided, the capacitor comprising a capacitor body including a plurality of dielectric layers and internal electrode layers provided between the different dielectric layers, wherein said capacitor body has, in at least one side face of said capacitor body, recesses extending in a... Agent: Sughrue-265550

20070145448 - Nonvolatile semiconductor memory device and method of manufacturing the same: A nonvolatile semiconductor memory device includes: a first semiconductor region having first conductivity; a channel formation region in which a channel inversion layer having second conductivity is formed; a second semiconductor region having the second conductivity; a third semiconductor region having the second conductivity; a laminated insulating film formed on... Agent: Robert J. Depke Lewis T. Steadman

20070145450 - Dram cell design with folded digitline sense amplifier: The present invention is generally directed to a DRAM cell design with folded digitline sense amplifier. In one illustrative embodiment, a memory array having a plurality of memory cells having an effective size of 6F2 is disclosed which has a plurality of dual bit active areas, each of the active... Agent: Williams, Morgan & Amerson

20070145451 - Semiconductor device having vertical-type channel and method for fabricating the same: A semiconductor device includes an active region including a surface region and a first recess formed below the surface region, the active region extending along a first direction; a device isolation structure provided on an edge of the active region; a gate line traversing over the surface region of the... Agent: Townsend And Townsend And Crew, LLP

20070145452 - Integrated circuit devices including a capacitor: Integrated circuit devices include an integrated circuit substrate and a conductive lower electrode layer of a capacitor on the integrated circuit substrate. A dielectric layer is on the lower electrode layer and a conductive upper electrode layer of the capacitor is on the dielectric layer. A first intermetal dielectric layer... Agent: Myers Bigel Sibley & Sajovec

20070145453 - Dielectric layer for electronic devices: A dielectric layer for electronic devices is disclosed herein. The dielectric layer comprises inorganic nanoparticles dispersed in a polymer selected from the group consisting of polysiloxane, polysilsesquioxane, and mixtures thereof. The layer improves the carrier mobility and current on/off ratio of an electronic device incorporating it, especially a thin film... Agent: Richard M. Klein Fay, Sharpe, Fagan, Minnich & Mckee, LLP

20070145454 - Scalable integrated logic and non-volatile memory: A scalable, logic transistor has a pair of doped regions for the drain and source. A gate insulator layer is formed over the substrate and between the drain and source regions. A gate stack is formed of a gate layer, such as polysilicon or metal, between two metal nitride layers.... Agent: Leffert Jay & Polglaze , P.A. Attn: Kenneth W. Bolvin

20070145459 - Eeprom devices and methods of operating and fabricating the same: In one aspect, an electrically erasable and programmable read-only memory (EEPROM) is provided. The EEPROM includes a semiconductor substrate including spaced apart first, second and third active regions, a common floating gate traversing over the first through third active regions, source/drain regions formed in the third active region on opposite... Agent: Volentine Francos, & Whitt PLLC

20070145456 - Flash memory device and method of manufacturing the same: A non-volatile memory device includes a semiconductor substrate having an active region defined by isolation films that extend along a first direction. A control gate line extends along in a second direction perpendicular to the first direction. First and second floating gates are formed on the active region and below... Agent: Townsend And Townsend And Crew, LLP

20070145460 - Flash memory device and method of manufacturing the same: Disclosed are a flash memory device having a silicon-oxide-nitride-oxide-silicon (SONOS) structure and a method of manufacturing the same. The flash memory device includes source and drain diffusion regions separated from each other on opposite sides of a trench in an active region of a semiconductor substrate, a control gate inside... Agent: The Law Offices Of Andrew D. Fortney, Ph.d., P.C.

20070145461 - Floating gate of flash memory device and method of forming the same: Disclosed is a floating gate of a flash memory device, wherein a tunneling oxide layer is formed on a semiconductor substrate, and a floating gate is formed in the shape of a lens having a convex top surface.... Agent: The Law Offices Of Andrew D. Fortney, Ph.d., P.C.

20070145462 - Low tunnel barrier insulators: Structures and methods for programmable array type logic and/or memory devices with asymmetrical low tunnel barrier intergate insulators are provided. The programmable array type logic and/or memory devices include non-volatile memory which has a first source/drain region and a second source/drain region separated by a channel region in a substrate.... Agent: Schwegman, Lundberg, Woessner & Kluth, P.A.

20070145455 - Non-volatile semiconductor device and method of fabricating embedded non-volatile semiconductor memory device with sidewall gate: A method of manufacturing a non-volatile semiconductor memory device is provided which overcomes a problem of penetration of implanted ions due to the difference of an optimal gate height in simultaneous formation of a self-align split gate type memory cell utilizing a side wall structure and a scaled MOS transistor.... Agent: Miles & Stockbridge PC

20070145463 - Pcram device with switching glass layer: A method of forming a memory device, such as a PCRAM, including selecting a chalcogenide glass backbone material for a resistance variable memory function and devices formed using such a method.... Agent: Dickstein Shapiro LLP

20070145464 - Random access memory device utilizing a vertically oriented select transistor: A memory structure has a vertically oriented access transistor with an annular gate region. A transistor is fabricated such that the channel of the transistor extends outward with respect to the surface of the substrate. An annular gate is fabricated around the vertical channel such that it partially or completely... Agent: Dickstein Shapiro LLP

20070145458 - Semiconductor device and manufacturing method thereof: A semiconductor device which is formed in a self-aligned manner without causing a problem of misalignment in forming a control gate electrode and in which a leak between the control gate electrode and a floating gate electrode is not generated, and a manufacturing method of the semiconductor device are provided.... Agent: Cook, Alex, Mcfarron, Manzo, Cummings & Mehler, Ltd.

20070145457 - System and method of forming a split-gate flash memory structure: A method for forming a split-gate flash memory structure includes etching a first gate layer to form one or more floating gates and forming an isolation layer over the floating gates. An insulation layer is deposited over the isolation layer and planarized.... Agent: Haynes And Boone, LLP

20070145467 - Eeproms with trenched active region structures and methods of fabricating and operating same: An EEPROM includes a semiconductor substrate and a device isolation region defining first, second and third active regions in the semiconductor substrate. The EEPROM also includes at least one first insulation region in at least one first trench in the first active region. A floating gate insulation layer is disposed... Agent: Myers Bigel Sibley & Sajovec

20070145466 - Flash memory device and method for manufacturing the same: A flash memory device and a method of manufacturing the same, wherein a silicon layer having a micro grain is formed between a tunnel oxide layer and a floating gate using a hemi-spherical grain (HSG) method, thereby preventing the dopant of the floating gate from being diffused into the tunnel... Agent: Marshall, Gerstein & Borun LLP

20070145465 - Non-volatile floating gate memory cells with polysilicon storage dots and fabrication methods thereof: Non-volatile floating gate memory cells with polysilicon storage dots and fabrication methods thereof. The non-volatile floating gate memory cell comprises a semiconductor substrate of a first conductivity type. A first region of a second conductivity type different from the first conductivity type is formed in the semiconductor substrate. A second... Agent: Birch, Stewart, Kolasch & Birch, LLP

20070145468 - Quantum dot nonvolatile transistor: Some embodiments of the present invention include apparatuses and methods relating to nonvolatile memory transistors.... Agent: Intel Corporation C/o Intellevate, LLC

20070145470 - Semiconductor device and method of manufacturing the same: A semiconductor device comprises a semiconductor substrate, and a non-volatile memory cell provided on the semiconductor substrate, the non-volatile memory cell comprising a tunnel insulating film provided on the semiconductor substrate, a floating gate electrode provided on the tunnel insulating film, the width of the floating gate electrode changing in... Agent: Finnegan, Henderson, Farabow, Garrett & Dunner LLP

20070145469 - Split gate type non-volatile memory device: Embodiments relate to a gate structure of a split gate-type non-volatile memory device and a method of manufacturing the same. In embodiments, the split gate-type non-volatile memory device may include a device isolation layer formed on a semiconductor substrate in the direction of a bit line to define an active... Agent: Sherr & Nourse, PLLC

20070145471 - Semiconductor device and method of manufacturing the same: A semiconductor device comprises a semiconductor substrate, and a non-volatile memory cell provided on the semiconductor substrate, the non-volatile memory cell comprising a tunnel insulating film provided on the semiconductor substrate, a floating gate electrode provided on the tunnel insulating film, the width of the floating gate electrode changing in... Agent: Finnegan, Henderson, Farabow, Garrett & Dunner LLP

20070145472 - Flash memory cell including dual tunnel oxide layer and method of manufacturing the same: A flash memory cell may include a tunnel oxide layer over a semiconductor substrate with a first tunnel having a first thickness and a second tunnel having a second thickness. A charge storage layer may be formed over a tunnel oxide layer, an insulating layer may be formed over a... Agent: Sherr & Nourse, PLLC

20070145473 - Semiconductor device and electronic control unit using the same: A semiconductor device with enhanced heat releasability and low-cost manufacturability is disclosed. This device has a substrate with an electronic circuit disposed on a first principal surface, a semiconductor element which is provided at the first surface of the substrate and electrically connected by wire bonding to the electronic circuit,... Agent: Crowell & Moring LLP Intellectual Property Group

20070145474 - Vertical-gate mos transistor for high voltage applications with differentiated oxide thickness: A vertical-gate MOS transistor is integrated in a semiconductor chip of a first conductivity type having a main surface, and includes an insulated trench gate extending into the semiconductor chip from the main surface to a gate depth. The trench gate includes a control gate and an insulation layer for... Agent: Seed Intellectual Property Law Group PLLC

20070145475 - Semiconductor device: A semiconductor device is discloses that includes an n-type semiconductor substrate; an alternating conductivity type layer on semiconductor substrate, the alternating conductivity type layer including n-type drift regions and p-type partition regions arranged alternately; p-type channel regions on the alternating conductivity type layer; and trenches formed from the surfaces of... Agent: Rossi, Kimms & Mcdowell LLP.

20070145476 - Semiconductor device: Embodiments relate to a semiconductor device. In embodiments, a semiconductor device may include a semiconductor substrate having isolation layers and a well region, a gate electrode formed within a trench having a predetermined depth in the well region, source/drain regions formed at both sides of the trench, respectively, an interlayer... Agent: Sherr & Nourse, PLLC

20070145477 - Transistor having a protruded drain: A field effect transistor includes a gate that is formed in a channel region of an active region defined on a substrate. A source is formed at a first surface portion of the active region that is adjacently disposed at a first side face of the gate. A drain is... Agent: Mills & Onello LLP

20070145478 - High voltage semiconductor device and method of manufacturing the same: A high voltage semiconductor device includes a semiconductor substrate having a high voltage well region; a device isolation film to define an active region of the semiconductor substrate; a drift region formed at an outer periphery of the device isolation film; an impurities region formed under the bottom of the... Agent: Mayer, Brown, Rowe & Maw LLP

20070145479 - Semiconductor device having super junction structure: A semiconductor device includes: two main electrodes; multiple first regions; and multiple second regions. The first region having a first impurity concentration and a first width and the second region having a second impurity concentration and a second width are alternately repeated. A product of the first impurity concentration and... Agent: Posz Law Group, PLC

20070145481 - Silicon-on-insulator chip having multiple crystal orientations: A silicon-on-insulator device having multiple crystal orientations is disclosed. In one embodiment, the silicon-on-insulator device includes a substrate layer, an insulating layer disposed on the substrate layer, a first silicon layer, and a strained silicon layer. The first silicon layer has a first crystal orientation and is disposed on a... Agent: Dicke, Billig & Czaja, P.l.l.c.

20070145482 - Thin film transistor and manufacturing method thereof, and liquid crystal display device having thin film transistor and manufacturing method thereof: A liquid crystal display device includes a substrate, a gate line and a data line intersected with each other to define a pixel region on the substrate, a thin film transistor having a nanowire channel layer in an intersection region of the gate line and the data line, and a... Agent: Brinks Hofer Gilson & Lione

20070145480 - Thin film transistor, electrode thereof and method of fabricating the same: A method of forming an electrode of a semiconductor device is provided. A material layer comprising an organo-metallic compound is first formed on a substrate. Thereafter, an electrode is formed by irradiating the material layer through utilizing the heating property of laser. Next, the material layer is patterned by utilizing... Agent: Jianq Chyun Intellectual Property Office

20070145483 - Semiconductor device: A highly-integrated, high-performance semiconductor device with a simplest possible structure can be provided. This semiconductor device comprises a semiconductor element that includes: a first semiconductor region of a first conductivity type provided in a plate-like form on a semiconductor substrate; a first ferroelectric insulating film provided on a first side... Agent: Finnegan, Henderson, Farabow, Garrett & Dunner LLP

20070145484 - Regulator circuit and semiconductor device therewith: A regulator circuit including an output-stage transistor for supplying a current to an external circuit has an electrostatic protection transistor formed in parallel with the output-stage transistor. The base of the electrostatic protection transistor is connected to, for example, the base of the output-stage transistor, or alternatively to a ground... Agent: Birch Stewart Kolasch & Birch

20070145485 - Integrated circuit devices having pad contact plugs in the cell array and peripheral circuit regions of the integrated circuit substrate: Integrated circuit devices, for example, dynamic random access memory (DRAM) devices, are provided including an integrated circuit substrate having a cell array region and a peripheral circuit region. A buried contact plug is provided on the integrated circuit substrate in the cell array region and a resistor is provided on... Agent: Myers Bigel Sibley & Sajovec

20070145486 - Semiconductor memory device and method of manufacturing the same: A semiconductor memory device has a memory cell and a peripheral transistor formed on a substrate. The memory cell is provided with a select transistor formed on the substrate and a capacitor connected to the select transistor. A diffusion layer of the peripheral transistor is connected to an upper layer... Agent: Young & Thompson

20070145487 - Multigate device with recessed strain regions: Embodiments of the invention provide a device with a multiple gates. Stress material within recesses of a device body metal gate may cause a stress in channel regions of the device, thereby improving performance of the device.... Agent: Intel Corporation C/o Intellevate, LLC

20070145488 - Semiconductor device and manufacturing method thereof: A semiconductor device includes a substrate, a p-channel MIS transistor formed on the substrate, the p-channel MIS transistor having a first gate electrode, and an n-channel MIS transistor formed on the substrate separately from the p-channel MIS transistor, the n-channel MIS transistor having a second gate electrode. Each of the... Agent: Oblon, Spivak, Mcclelland, Maier & Neustadt, P.C.

20070145489 - Design of high-frequency substrate noise isolation in bicmos technology: A high-frequency noise isolation structure and a method for forming the same are provided. The noise isolation structure isolates a first device region and a second device region over a semiconductor substrate. The noise isolation structure preferably includes a sinker region substantially encircling a first device region, a buried layer... Agent: Slater & Matsil, L.L.P.

20070145490 - Semiconductor device and method for manufacturing the same: Embodiments relate to a semiconductor device and a method for manufacturing a semiconductor device. In embodiments, a transistor including the gate electrode and a source/drain may be formed between isolation layers and a contact may be connected to the source/drain. A barrier layer may be formed at a boundary between... Agent: Sherr & Nourse, PLLC

20070145491 - Semiconductor device and method of manufacture: A semiconductor device includes a substrate in which at least one transistor is formed; an interlayer insulating layer formed over the entire surface of the substrate including the transistor, the interlayer insulating layer having contact holes to expose the electrodes of the transistor; and contact insulating layers formed over the... Agent: Sherr & Nourse, PLLC

20070145492 - Semiconductor device and method of manufacture: A method of manufacturing a semiconductor device includes forming an insulating layer over the semiconductor substrate and the gate electrode. An insulating layer may have a via hole connected to the semiconductor substrate or the gate electrode and a trench connected to the via hole. A first barrier layer and... Agent: Sherr & Nourse, PLLC

20070145493 - Semiconductor device and manufacturing method thereof: A semiconductor device includes a substrate, a p-channel MIS transistor formed on an n-type well on the substrate, having a first gate dielectric and a first gate electrode formed thereon and formed of a Ta—C alloy wherein a crystal orientation ratio of a TaC (111) face in a film thickness... Agent: Finnegan, Henderson, Farabow, Garrett & Dunner LLP

20070145494 - Semiconductor device and method for manufacturing the same: Gate length is 110 nm±15 nm or shorter (130 nm or shorter in a design rule) or an aspect ratio of an area between adjacent gate electrode structures thereof (ratio of the height of the gate electrode structure to the distance between the gate electrode structures) is 6 or higher.... Agent: Westerman, Hattori, Daniels & Adrian, LLP

20070145495 - Method of fabricating a mosfet transistor having an anti-halo for modifying narrow width device performance: A method including forming a transistor structure structure comprising a gate electrode over an active region of a substrate, the active region defined by a trench isolation structure and changing a performance of a narrow width transistor with respect to a wide width transistor by introducing a dopant into the... Agent: Blakely Sokoloff Taylor & Zafman

20070145496 - Semiconductor device and method of manufacturing the same: according to embodiments, a semiconductor device may include a semiconductor substrate in which source and drain regions may be formed, a gate insulating layer formed on the semiconductor substrate, a gate electrode formed on the gate insulating layer, a first sidewall insulating layer formed on the side of the gate... Agent: Sherr & Nourse, PLLC

20070145497 - Semiconductor device: Embodiments relate to a semiconductor device including an impurity region formed in the semiconductor device; an insulating layer formed on the impurity region; and a contact formed to have a certain step difference in the impurity region through the insulating layer.... Agent: Sherr & Nourse, PLLC

20070145498 - Device with scavenging spacer layer: Embodiments of the invention provide a device with a metal gate, a high-k gate dielectric layer and reduced oxidation of a substrate beneath the high-k gate dielectric layer. An oxygen-scavenging spacer layer on side walls of the high-k gate dielectric layer and metal gate may reduce such oxidation during high... Agent: Intel Corporation C/o Intellevate, LLC

20070145500 - Cmos image sensor and manufacturing method thereof: A CMOS image sensor capable of improving characteristics of the image sensor by preventing damage to a photodiode region and a method for manufacturing the same are provided. The CMOS image sensor includes: a semiconductor substrate on which a device isolation region and an active region are defined; a photodiode... Agent: Saliwanchik Lloyd & Saliwanchik A Professional Association

20070145499 - Photovoltaic ultraviolet sensor: A photovoltaic ultraviolet sensor comprises a zinc oxide single crystal substrate. On the +c face of the zinc oxide single crystal substrate, an ultraviolet receiver is formed. The exemplary ultraviolet receiver includes a Schottky electrode which, when receiving ultraviolet rays, produces a voltage in cooperation with the zinc oxide single... Agent: Frishauf, Holtz, Goodman & Chick, PC

20070145501 - Semiconductor device having a suspended micro-system: A method is provided for fabricating a semiconductor device that includes a suspended micro-system. According to the method, a silicon porous layer is formed above a silicon substrate, and the silicon porous layer is oxidized. An oxide layer is deposited, and a first polysilicon layer is deposited above the oxide... Agent: Fleit, Kain, Gibbons, Gutman, Bongini & Bianco P.l.

20070145502 - Spin polarization amplfying transistor: An embodiment of the invention is a transistor formed in part by a ferromagnetic semiconductor with a sufficiently high ferromagnetic transition temperature to coherently amplify spin polarization of a current. For example, an injected non-polarized control current creates ferromagnetic conditions within the transistor base, enabling a small spin-polarized signal current... Agent: Intel/blakely

20070145503 - Pixel structure with improved charge transfer: An active pixel is described comprising a semiconductor substrate and a radiation sensitive source of carriers in the substrate, such as for instance, a photodiode. A non-carrier storing, carrier collecting region in the substrate is provided for attracting carriers from the source as they are generated. At least one doped... Agent: Daniel E. Ovanezian Blakely, Sokoloff, Taylor & Zafman LLP

20070145504 - Cmos image sensor and method for manufacturing the same: A CMOS image sensor is provided. The CMOS image sensor can include: a plurality of photodiodes formed on a semiconductor substrate; an interlayer dielectric layer formed on an entire surface of the semiconductor substrate having the plurality of photodiodes; color filter layers including multi-layered blue color filter layers formed on... Agent: Saliwanchik Lloyd & Saliwanchik A Professional Association

20070145505 - Image sensor and method for manufacturing the same: Disclosed are an image sensor and a method for manufacturing the same, capable of increasing a light absorbing coefficient by forming a rough surface on a photodiode. The image sensor includes a semiconductor substrate with a plurality of photodiodes thereon having rough upper surfaces, a dielectric layer on the semiconductor... Agent: The Law Offices Of Andrew D. Fortney, Ph.d., P.C.

20070145506 - Assembly of image-sensing chip and circuit board with inward wire bonding: An assembly of image-sensing chip and circuit boardwith inward wire bonding, including an image-sensing chip, a circuit board and a glass board. The circuit board is formed with a window and several wire bonding slots. An image-sensing chip is adhered to the circuit board. A wire bonding area is defined... Agent: Rosenberg, Klein & Lee

20070145507 - Contact layers for thin film solar cells employing group ibiiiavia compound absorbers: The present invention provides methods and apparatus for deposition of contact layers for Group IBIIIAVIA solar cells using electrodeposition and/or electroless deposition approaches, and solar cells that result therefrom. In one aspect of the invention, the solar cell that results includes a substrate, a stacked contact layer that includes a... Agent: Pillsbury Winthrop Shaw Pittman LLP

20070145508 - Cmos image sensor and method for manufacturing the same: A CMOS image sensor and a fabrication method thereof are provided. The CMOS image sensor includes a semiconductor substrate having an active area and an isolation area; a photodiode area and a transistor area defined on the active area; a plurality of semiconductor patterns formed on the photodiode area; a... Agent: Saliwanchik Lloyd & Saliwanchik A Professional Association

20070145511 - Cmos image sensor: A CMOS image sensor is provided. The CMOS image sensor includes: a semiconductor substrate having a photodiode region and a floating diffusion region defined thereon; a gate electrode formed inside the photodiode region of the semiconductor substrate; a low concentration impurity region formed on the photodiode region at one side... Agent: Saliwanchik Lloyd & Saliwanchik A Professional Association

20070145509 - Cmos image sensor and method for manufacturing the same: A CMOS image sensor and a fabrication method thereof is provided. The CMOS image sensor includes a semiconductor substrate having an active area and an isolation area; a photodiode area and a transistor area formed on the active area; a gate electrode formed on the transistor area where the gate... Agent: Saliwanchik Lloyd & Saliwanchik A Professional Association

20070145510 - Cmos image sensor and method for manufacturing the same: A CMOS image sensor and method for fabricating same are provided. The CMOS image sensor can include a gate electrode formed on an active area of a first conductive type semiconductor substrate, on which a photodiode area and a transistor area are defined; a low-density second conductive type diffusion region... Agent: Jeff Lloyd Saliwanchik, Lloyd & Saliwanchik

20070145512 - Photogate stack with nitride insulating cap over conductive layer: A photogate structure having increased quantum efficiency, especially for low wavelength light such as blue light. The photogate is formed of a thin conductive layer, such as a layer of doped polysilicon. A nitride insulating cap is formed over the conductive layer. The nitride layer reduces the reflections at the... Agent: Dickstein Shapiro LLP

20070145513 - Semiconductor device, an electronic device and an electronic apparatus: A gate insulating film 3 is formed of an insulative inorganic material containing silicon and oxygen as a main material. The gate insulating film 3 contains hydrogen atoms. A part of the absorbance of infrared radiation of which wave number is in the range of 830 to 900 cm−1 is... Agent: Harness, Dickey & Pierce, P.L.C

20070145514 - Trench field plate termination for power devices: In accordance with an embodiment of the invention, a semiconductor power device includes an active region configured to conduct current when the semiconductor device is biased in a conducting state, and a termination region along a periphery of the active region. A first silicon region of a first conductivity type... Agent: Townsend And Townsend And Crew, LLP

20070145516 - Cmos image sensor and method for manufacturing the same: Embodiments relate to a CMOS image sensor. In embodiments, the CMOS image sensor may include a semiconductor substrate, a photodiode, a first conduction type impurity region, a first insulating layer, a conduction layer, and a second insulating layer. The semiconductor substrate may have a trench in which a device isolation... Agent: Sherr & Nourse, PLLC

20070145517 - Method of manufacturing a semiconductor device: A method for manufacturing a semiconductor device includes forming an insulation film over a semiconductor substrate having a conduction layer; forming a trench pattern over the insulation film; etching an upper portion of the insulation film by using the trench pattern as a mask to form a trench; removing the... Agent: Sherr & Nourse, PLLC

20070145518 - Circuit board, semiconductor device, and manufacturing method of circuit board: A circuit board includes a semiconductor substrate which has a plurality of through holes passing from an upper surface to a lower surface thereof. A plurality of wiring lines are provided on the upper surface of the semiconductor substrate and have bottomed cylindrical portions located within regions corresponding to the... Agent: Frishauf, Holtz, Goodman & Chick, PC

20070145515 - Metal electrical fuse structure: An electrical fuse and a method for forming the same are provided. The electrical fuse includes a dielectric layer over a shallow trench isolation region and a contact plug extending from a top surface of the dielectric layer to the shallow trench isolation region, wherein the contact plug comprises a... Agent: Slater & Matsil, L.L.P.

20070145519 - Butted contact structure: A semiconductor structure and a method of forming the same using replacement gate processes are provided. The semiconductor structure includes a butted contact coupling a source/drain region, or a silicide on the source/drain region, of a first transistor and a gate extension. The semiconductor structure further includes a contact pad... Agent: Slater & Matsil, L.L.P.

20070145520 - Semiconductor device and manufacturing method of the same: In a semiconductor device of the present invention, two epitaxial layers are formed on a P type single crystal silicon substrate. One of the epitaxial layers has an impurity concentration higher than that of the other epitaxial layer. The epitaxial layers are divided into a plurality of element formation regions... Agent: Morrison & Foerster LLP

20070145521 - Semiconductor device and method of manufacturing the same: embodiments relate to a semiconductor device that may include a continuously formed pad oxide layer and a field oxide layer. The device may include a semiconductor substrate having a trench, an insulating material formed in the trench, a pad oxide layer formed at the active region of the semiconductor substrate... Agent: Sherr & Nourse, PLLC

20070145522 - Semiconductor device and method of manufacturing the same: A semiconductor device includes an element isolation insulating film provided in a semiconductor substrate between first and second element regions, a gate electrode running over the element isolation insulating film, first and second element regions, a first stopper film formed on the gate electrode and first element region to cover... Agent: Foley And Lardner LLP Suite 500

20070145523 - Integrateable capacitors and microcoils and methods of making thereof: Method for integrally forming high Q tunable capacitors and high Q inductors on a substrate are described. A variable capacitors may employ stops between a moveable electrode and a fixed electrode to reduce and/or prevent electrical shorting between the moveable and fixed electrode. A capacitor may employ a split bottom... Agent: Oliff & Berridge, PLC

20070145524 - Fpga structure provided with multi parallel structure and method for forming the same: In an FPGA of a semiconductor device and a method of forming the FPGA, a first pattern having a voltage selectable conductivity is formed to connect first vias of the semiconductor device in parallel.... Agent: Mayer, Brown, Rowe & Maw LLP

20070145526 - Mim capacitor and method for manufacturing the same: Disclosed are an MIM (Metal-Insulator-Metal) capacitor and a method of manufacturing the same. The MIM capacitor includes: a lower metal layer and a lower metal interconnection on a substrate; a barrier metal layer on the lower metal layer; an insulating layer on the barrier metal layer; an upper metal layer... Agent: The Law Offices Of Andrew D. Fortney, Ph.d., P.C.

20070145525 - Mim capacitor structure and method of manufacturing the same: A metal-insulator-insulator (MIM) capacitor structure is provided. The MIM capacitor includes a top electrode, a bottom electrode and a dielectric layer. The dielectric layer is disposed between the top electrode and the bottom electrode. The main feature for this kind of MIM capacitor is that the bottom electrode includes a... Agent: Jianq Chyun Intellectual Property Office

20070145528 - Power dissipation-optimized high-frequency coupling capacitor and rectifier circuit: A power dissipation-optimized high-frequency coupling capacitor is provided for a rectifier circuit as well as a power dissipation-optimized high-frequency rectifier circuit. The elements of the rectifier stages of the inventive high-frequency rectifier circuit are disposed in an optimized manner regarding space such that the coupling capacitors are connected directly to... Agent: Mcgrath, Geissler, Olds & Richardson, PLLC

20070145527 -