Active solid-state devices (e.g., transistors, solid-state diodes) inventions 08/06

20060192193 - Phase-change ram and method for fabricating the same: A PRAM and a fabricating method thereof are provided. The PRAM includes a transistor and a data storage capability. The data storage capability is connected to the transistor. The data storage includes a top electrode, a bottom electrode, and a porous PCM layer. The porous PCM layer is interposed between...

20060192194 - Electronic device contact structures: Electronic device contact structures are disclosed....

20060192195 - Nitride semiconductor light emitting device: A nitride semiconductor light emitting device is provided. The nitride semiconductor light emitting device includes: an n-type nitride semiconductor layer; an Incontaining super lattice structure layer formed above the n-type nitride semiconductor layer; a first electrode contact layer formed above the super lattice structure layer; a first cluster layer formed...

20060192196 - Method of increasing efficiency of thermotunnel devices: The present invention comprises a tunneling device in which the collector electrode is modified so that tunneling of higher energy electrons from the emitter electrode to the collector electrode is enhanced. In one embodiment, the collector electrode is contacted with an insulator layer, preferably aluminum or silicon nitride, disposed between...

20060192199 - Celluloses and devices thereof: An electronic device including a dielectric layer including a cellulose derivative is disclosed....

20060192198 - Light-emitting copolymers and electronic devices using such copolymers: The invention provides novel pentaphenylene copolymers which are useful in electronic devices....

20060192197 - Organic thin film transistor: An organic thin film transistor utilizing an organic semiconductor film is composed of a first substrate, a gate electrode, a gate insulation film, an organic semiconductor film, a source electrode, a drain electrode, a protective film and a second substrate, and produced by forming a gate electrode, a gate insulation...

20060192200 - Test key structure: A test key structure includes a substrate, a closed loop, a plurality of spacers, a plurality of first and second doping regions and a plurality of contacts. The closed loop having two conductive lines and two connection portions is located on the substrate. Each connection portion connects to one end...

20060192201 - Display device: The present invention provides an active matrix type display device having a high aperture ratio and a required auxiliary capacitor. A source line and a gate line are overlapped with part of a pixel electrode. This overlapped region functions to be a black matrix. Further, an electrode pattern made of...

20060192202 - Semiconductor device forming method: In thin film transistors (TFTS) having an active layer of crystalline silicon adapted for mass production, a catalytic element is introduced into doped regions of an amorphous silicon film by ion implantation or other means. This film is crystallized at a temperature below the strain point of the glass substrate....

20060192205 - Electro-optical device and electronic device: The switching TFT 201 formed within a pixel has a multi-gate structure, which is a structure which imposes an importance on reduction of OFF current value. Further, the current control TFT 202 has a channel width wider than that of the switching TFT to make a structure appropriate for flowing...

20060192203 - Solid-state image pickup device: An imaging area is provided on a surface of a semiconductor substrate, and light-receiving portions and transfer channels are provided in the imaging area. A group of transfer electrodes extends in a direction crossing the transfer channels on the imaging area. A group of transfer signal lines, which are provided...

20060192204 - Thin film transistor panel: A thin film transistor panel including: a transparent substrate; scanning lines made of a light blocking electroconductive material to be formed on the transparent substrate; data lines formed on the transparent substrate to be perpendicular to the scanning lines and made of a light blocking electroconductive material; thin film transistors,...

20060192206 - Flip-chip type nitride semiconductor light emitting diode: Disclosed herein is a flip-chip type nitride semiconductor light emitting diode. The light emitting diode comprises an n-type nitride semiconductor layer formed on a transparent substrate and having a substantially rectangular upper surface, an n-side electrode which comprises at least one bonding pad adjacent to at least one corner of...

20060192212 - High brightness light emitting diode and fabrication method thereof: A light emitting diode includes a substrate tilted toward first and second directions simultaneously, a first cladding layer formed with a semiconductor material of a first conductive type on the substrate, an active layer formed on the first cladding layer, and a second cladding layer formed with a semiconductor material...

20060192211 - Light emitting diode and method for fabricating same: wherein t1 is a film thickness [nm] of the AlGaAs layer, t2 is a film thickness [nm] of the AlInP layer, λ0 is a wavelength [nm] of a light to be reflected, n1 is a refractive index of the AlGaAs layer to the wavelength of the light to be reflected,...

20060192213 - Light-emitting device: A light-emitting device includes electron emitters for planarly emitting electrons, collector electrodes disposed to face corresponding one electron emitter, and a phosphor formed near the collector electrodes. During a period when electrons are emitted from the electron emitter, a collector voltage is applied to each of the collector electrodes in...

20060192210 - Light-emitting element, light-emitting device, and electronic apparatus: A light-emitting element includes a first electrode, a second electrode, and a light-emitting layer disposed between the first electrode and the second electrode, the light-emitting layer including an inorganic semiconductor material, a first material, and a second material, at least one of the first material and the inorganic semiconductor material...

20060192207 - Nitride semiconductor light emitting device: Provided is a nitride semiconductor light emitting device having enhanced output power and resistance to electrostatic discharge. The light emitting device comprises an n-side contact layer formed on a substrate, a current diffusion layer formed on the n-side contact layer, an active layer formed on the current diffusion layer, and...

20060192209 - Optical integrated semiconductor light emitting device: An optical integrated semiconductor light emitting device with improved light emitting efficiency is provided by preventing leak current from flowing through a high defect region of the substrate. The optical integrated semiconductor light emitting device includes: a substrate, in which in a low defect region made of crystal having a...

20060192214 - Semiconductor device, led print head, that uses the semiconductor, and image forming apparatus that uses the led print head: A semiconductor device includes a substrate, conductive layer, semiconductor thin films, and individual electrodes. The conductive layer is formed on the substrate and serves as a common electrode. The thin films are bonded on the conductive layer. Each of the plurality of semiconductor thin films includes at least one active...

20060192208 - Wavelength-convertible light emitting device: The present invention provides a wavelength-convertible LED which has first and second surfaces, including first and second conductivity-type cladding layers and an active layer formed between the first and second conductivity-type cladding layers to emit a specific wavelength light. The invention also includes at least a piezoelectric layer on at...

20060192215 - Light emitting device and light emitting system: A light emitting device in accordance with the present invention includes a light emitting element and a light sensor for detecting the luminous intensity of the light emitted from the light emitting element. The light emitting element includes a lower electrode, a light emitting material layer including at least a...

20060192216 - Semiconductor light emitting device and surface light emitting device: A semiconductor light emitting device may include a first supporting member having a main surface; a semiconductor light emitting element having a light emitting layer and provided on the main surface of the first supporting member, the light emitting layer being substantially parallel to the main surface of the first...

20060192217 - High efficiency light emitting diode (led) with optimized photonic crystal extractor: A high efficiency, and possibly highly directional, light emitting diode (LED) with an optimized photonic crystal extractor. The LED is comprised of a substrate, a buffer layer grown on the substrate (if needed), an active layer including emitting species, one or more optical confinement layers that tailor the structure of...

20060192218 - Nitride semiconductor light emitting device, and method of fabricating nitride semiconductor light emitting device: In a nitride semiconductor light emitting device, a first conductivity type nitride semiconductor layer is provided on a support base and a second conductivity type nitride semiconductor layer is provided on the support base. An active region is provided between the first conductivity type nitride semiconductor layer and the second...

20060192221 - Methods, apparatus, and systems with semiconductor laser packaging for high modulation bandwidth: Semiconductor packaging methods, systems and apparatus for semiconductor lasers to achieve high modulation bandwidth. Systems, methods and apparatus for minimizing the inductance of wire bond interconnects and impedance matching in a semiconductor laser package. Systems, methods and apparatus for monitoring a photocurrent in order to provide automatic power control (APC)...

20060192219 - Novel red phosphors for solid state lighting: A red phosphor composition in combination with a semiconductor light emitting device (e.g., VCSEL, LED, or LD), preferably a GaN based device, that emits light at a bright violet- blue light range, i.e., having a wavelength in the range of 400 nm to 600 nm, which can be further combined...

20060192220 - Organic el panel: Each pixel includes a region where a lower reflection film is not present. In each pixel, there is a region where a microcavity structure is formed between a counter electrode and a lower reflection film and another region where the microcavity structure is not formed. The regions differentiated in cavity...

20060192222 - Light emitting device: A light emitting device is provided. The light emitting device includes a substrate, at least one light emitting chip and a first heat dissipation element. The substrate has a top surface and a bottom surface, and contacts are disposed on the top surface. The light emitting chip disposed on the...

20060192223 - Nitride semiconductor light emitting device: The invention relates to a flip-chip nitride semiconductor LED. In the LED, a light emitting structure has first and second conductivity type nitride semiconductor layers and an active layer interposed therebetween. Each of plurality of first and second electrodes has a bonding pad placed adjacent to a top corner of...

20060192224 - Semiconductor light emitting device: A semiconductor light emitting device includes a mold resin having a cup shape portion on an upper surface of the mold resin. One or more holes penetrate through the cup shape portion to outside of the mold resin and/or one or more trenches extend from the cup-shaped portion to outside...

20060192225 - Light emitting device having a layer of photonic crystals with embedded photoluminescent material and method for fabricating the device: A light emitting device and method for fabricating the device utilizes a layer of photonic crystals with embedded photoluminescent material over a light source. The layer of photonic crystals with the embedded photoluminescent material can be used in different types of light emitting devices, such as lead frame-mounted light emitting...

20060192226 - Liquid container: There are disclosed a cap or lid for a container which has a light emitter that generates zestful reflected light enabling recognition of a content even in a dark place, a container to which a light emitter is attached to generate zestful reflected light, a base member disposed at a...

20060192227 - Composition for preparing electron emitter, electron emitter produced by using the composition, and electron emission device comprising the electron emitter: A composition for preparing an electron emitter, an electron emitter produced by using the composition, and an electron emission device comprising the electron emitter are provided. The composition for preparing an electron emitter includes carbon-based materials and vehicles, wherein the vehicles comprise a polymer having a vinyl pivalate monomer. The...

20060192228 - Compound semiconductor epitaxial substrate and method for manufacturing same: A compound semiconductor epitaxial substrate having a pseudomorphic high electron mobility field effect transistor structure including an InGaAs layer as a strained channel layer and an AlGaAs layer containing n type impurities as a front side electron-donating layer, wherein said substrate contains an InGaP layer in an orderly state on...

20060192229 - Semiconductor device and electronic apparatus using the same: A semiconductor device with high function, multifunction and high added value. The semiconductor device includes a PLL circuit that is provided over a substrate and outputs a signal with a correct frequency. By providing such a PLL circuit over the substrate, a semiconductor device with high function, multifunction and high...

20060192230 - Image sensor packages and frame structure thereof: A semiconductor package such as an image sensor package. A frame structure includes an array of frames, each having an aperture therethrough, into which an image sensor die in combination with a cover glass, filter, lens or other components may be installed in precise mutual alignment. Singulated image sensor dice...

20060192231 - Field effect transistor and its manufacturing method: The present invention is an object to provide a high-performance vertical field effect transistor having a microminiaturized structure in which the distance between the gate and the channel is made short not through a microfabrication process, having a large gate capacitance, and so elaborated that the gate can control the...

20060192232 - Semiconductor device and method of manufacturing semiconductor device: A semiconductor device includes a side wall spacer formed on the side surface of a gate electrode formed on the upper side of a semiconductor substrate with a gate insulation film therebetween, extension regions built up on the semiconductor substrate, and source/drain regions formed on the extension regions, wherein a...

20060192233 - Body potential imager cell: An imaging circuit, an imaging sensor, and a method of imaging. The imaging cell circuit including one or more imaging cell circuits, each imaging cell circuit comprising: a transistor having a floating body for holding charge generated in the floating body in response to exposure of the floating body to...

20060192234 - Solid-state imaging device: Pixels have a photodiode 1, a transfer gate electrode 2 for transferring charges accumulated in the photodiode 1, a floating diffusion section 3 for accumulating the charge transferred by the transfer gate electrode 2, an amplification transistor 15 in which a gate electrode is connected to the floating diffusion section...

20060192235 - System and method for reducing shorting in memory cells: An MRAM device includes an array of magnetic memory cells having an upper conductive layer and a lower conductive layer separated by a barrier layer. To reduce the likelihood of electrical shorting across the barrier layers of the memory cells, spacers can be formed around the upper conductive layer and,...

20060192237 - Magnetic elements with ballistic magnetoresistance utilizing spin-transfer and an mram device using such magnetic elements: A method and system for providing a magnetic element is disclosed. The method and system include providing a pinned layer, a magnetic current confined layer, and a free layer. The pinned layer is ferromagnetic and has a first pinned layer magnetization. The magnetic current confined layer has at least one...

20060192236 - Semiconductor device: The present invention provides a semiconductor device comprising: a semiconductor substrate having a DRAM portion and a Logic portion; a first transistor in said DRAM portion; a second transistor in said Logic portion; a first insulating layer covering said DRAM portion and said Logic portion; a first contact plug formed...

20060192238 - Intermediate semiconductor device structure including multiple photoresist layers: The present invention prevents cross-linking between multiple resists that are used in the fabrication of a semiconductor device. In order to prevent resists in close proximity or contact with one another from cross-linking, a non-reactive separation layer is disposed between the resists. The separation layer prevents incompatible components of the...

20060192239 - Permeable capacitor electrode: The present teachings describe a container capacitor that utilizes an etchant permeable lower electrode for the formation of single or double-sided capacitors without excessive etching back of the periphery of the use of sacrificial spacers. The present teachings further describe a method of forming at least one capacitor structure on...

20060192240 - Low power memory subsystem with progressive non-volatility: The memory system is comprised of a plurality of memory arrays that are coupled to a processor. The memory arrays are comprised of non-volatile memory cells that have read/write speeds and charge retention times that are different from the other memory arrays of the system. Each of the memory cells...

20060192242 - Low power memory subsystem with progressive non-volatility: The memory system is comprised of a plurality of memory arrays that are coupled to a processor. The memory arrays are comprised of non-volatile memory cells that have read/write speeds and charge retention times that are different from the other memory arrays of the system. Each of the memory cells...

20060192241 - Non-volatile memory and manufacturing method thereof: A non-volatile memory comprising a substrate, a stacked gate structure, a conductive spacer, an oxide/nitride/oxide layer, buried doping regions, a control gate and an insulating layer. The stacked gate structure is disposed on the substrate. The stacked gate structure comprises a gate dielectric layer, a select gate and a cap...

20060192243 - Embedded trap direct tunnel non-volatile memory: The cell comprises a substrate having a drain region and a source region. An oxynitride layer is formed over the substrate. An embedded trap layer is formed over the oxynitride layer. An injector layer is formed over the embedded trap layer. A high dielectric constant layer is formed over the...

20060192245 - Semiconductor memory device and method for manufacturing the same: When an insulating material deposited in a device isolation trench is etched, an etching process is performed to make a surface height of the insulating film lower than that of the device forming region. As a result, when a polysilicon film for a floating gate electrode is formed on a...

20060192246 - Semiconductor memory device that uses metal nitride as trap site and method of manufacturing the same: In one embodiment, a memory device includes a gate structure comprising a metal nitride material in a charge storing layer on a semiconductor substrate. The gate structure is disposed between a first dopant region and a second dopant region formed on the semiconductor substrate. The metal nitride material is structured...

20060192244 - Symmetrical and self-aligned non-volatile memory structure: A memory structure in a semiconductor substrate essentially comprises a first conductive line, two conductive blocks, two first dielectric spacers, a first dielectric layer, and a second conductive line. The first conductive line, e.g., a polysilicon line, is formed above the semiconductor substrate, and the two conductive blocks composed of...

20060192248 - Memory device and method of manufacturing including deuterated oxynitride charge trapping structure: A method for manufacturing a charge storage stack including a bottom dielectric layer, a charge trapping structure on the bottom dielectric layer, and a top dielectric layer, each comprising silicon oxynitride, are formed using reactant gases that comprise hydrogen, where the hydrogen comprises at least 90 percent deuterium isotope. The...

20060192247 - Nitride semiconductor light-emitting device and method for fabrication thereof: A nitride semiconductor light-emitting device includes a substrate and a nitride semiconductor layer including a light-emitting layer stacked on the substrate, wherein a normal line relative to a lateral face of the nitride semiconductor layer is not perpendicular to a normal line relative to a principal plane of the substrate....

20060192249 - Field effect transistors with vertically oriented gate electrodes and methods for fabricating the same: In semiconductor devices, and methods of formation thereof, both planar-type memory devices and vertically oriented thin body devices are formed on a common semiconductor layer. In a memory device, for example, it is desirable to have planar-type transistors in a peripheral region of the device, and vertically oriented thin body...

20060192250 - Complementary metal-oxide-semiconductor image sensor and method for fabricating the same: A complementary metal-oxide-semiconductor (CMOS) image sensor and a method for fabricating the same are provided. The CMOS image sensor includes: a pixel region provided with a plurality of unit pixels, each including a buried photodiode and a floating diffusion region; and a logic region provided with CMOS devices for processing...

20060192251 - Bipolar-based scr for electrostatic discharge protection: A system and method is disclosed for implementing a new bipolar-based silicon controlled rectifier (SCR) circuit for an electrostatic discharge (ESD) protection. The SCR circuit comprises a bipolar device to be formed on a semiconductor substrate. The bipolar device comprises at least an N-well for providing a high resistance and...

20060192252 - Semiconductor device allowing modulation of a gain coefficient and a logic circuit provided with the same: In addition to ordinary MOS gate, drain and source, a semiconductor element includes a control gate having geometry, which is defined only by a group of straight lines along a rectangular form of the MOS gate, is not defined by an oblique line and provides a nonuniform gate length at...

20060192253 - Semiconductor device, electrode member and electrode member fabrication method: A semiconductor device that improves the heat cycle resistance and power cycle resistance of a power module. An electrode member in which copper posts are formed in a plurality of perforations cut in a support made of a ceramic material is soldered onto a side of an IGBT where an...

20060192254 - Semiconductor memory device: In a full CMOS SRAM having a lateral type cell (memory cell having three partitioned wells arranged side by side in a word line extending direction and longer in the word line direction than in the bit line direction) including first and second driver MOS transistors, first and second load...

20060192255 - Self-aligned semiconductor contact structures and methods for fabricating the same: A self-aligned contact structure and a method of forming the same include selected neighboring gate electrodes with adjacent sidewalls that are configured to angle toward each other. The angled surfaces of the gate electrodes can be protected using a liner layer that can extend the length of the contact window...

20060192256 - High-voltage power semiconductor device: A semiconductor device, such as a metal-oxide semiconductor field-effect transistor, includes a semiconductor substrate, a drift layer formed on the substrate, a first and a second source region, and a JFET region defined between the first and the second source regions. The JFET region may have a short width and/or...

20060192257 - Semiconductor device and fabrication method thereof: A semiconductor device and fabrication method thereof restrains an amplified current between input voltage Vin and ground voltage Vss, and first and second n-wells are biased into internal voltage sources, whereby the current-voltage characteristic of the input pad becomes stabilized during an open/short checkup of a semiconductor device. The semiconductor...

20060192258 - Semiconductor device: A semiconductor device includes a semiconductor substrate having a semiconductor layer, a gate electrode, a source region, a drain region, an element separation insulating film layer and a wiring. The gate electrode include a laminated structure having a gate insulating film formed on the semiconductor layer, a metal or a...

20060192259 - Bonded assembly having improved adhesive bond strength: A bonded assembly is provided. The bonded assembly comprises: (a) a first substrate having a plurality of etched trenches defined in a first bonding surface; and (b) a second substrate having a second bonding surface. The second bonding surface is bonded to the first bonding surface with an adhesive and...

20060192260 - Process for packaging micro-components using a matrix: A process for packaging a number of micro-components on the same substrate wafer, in which each micro-component is enclosed in a cavity. This process includes making a covering plate comprising a re-useable matrix, a polymer layer, and a metal layer; covering the wafer with the covering plate; applying a contact...

20060192261 - Active pixel sensor: An active pixel sensor is proposed by the invention. The position of the gate of the reset transistor is kept away from the interface of the isolation region and the silicon so that the depletion region does not reach the isolation. Accordingly, dark currents caused by isolation region damages can...

20060192262 - Cmos image sensor: Unit cells 2n1 and 2n2 arranged two-dimensionally in a row direction and a column direction includes a cell with four pixels as a set arranging pixels having an oblong shape and lengthwise shape alternatively with floating junctions FJ1 and FJ2 taken as centers; a plurality of reading transistors (Tr1 to...

20060192263 - Solid-state imaging device: In each photosensitive cell, a photodiode 101, a transfer gate 102, a floating diffusion layer section 103, an amplifier transistor 104, and a reset transistor 105 are formed in one active region surrounded by a device isolation region. The floating diffusion layer section 103 included in one photosensitive cell is...

20060192264 - Contact assembly and socket for use with semiconductor packages: In a contact assembly, a first set of contacts (30-1 through 30-5) is arranged on a first surface and a second set of contacts (40-5 through 4-1) is arranged on a second surface with respective contacts of each set used as pairs. A plurality of first and second sets are...

20060192265 - System-on-chip with shield rings for shielding functional blocks therein from electromagnetic interference: A system-on-chip (SoC) that is immune to electromagnetic interference has block shield rings fabricated therein. The SoC includes a microprocessor core; an on-chip bus interface; an embedded memory block; and an analog/mixed-signal integrated circuit shielded by an EMI shield ring encircling the analog/mixed-signal integrated circuit for protecting the analog/mixed-signal integrated...

20060192266 - Semiconductor memory having charge trapping memory cells and fabrication method thereof: A semiconductor memory having charge trapping memory cells, where the direction of current flow of each channel region of the memory transistors runs transversely with respect to the relevant word line, the bit lines are arranged on the top side of the word lines and in a manner electrically insulated...

20060192267 - Inductor fabricated with dry film resist and cavity and method of fabricating the inductor: An inductor fabricated with a dry film resist and a cavity and a method of fabricating the inductor. The cavity can be formed in a substrate to minimize a parasitic capacitance generated by structures of upper electrodes, an insulating layer, and a lower electrode and minimize energy loss caused by...

20060192268 - Semiconductor varactor with reduced parasitic resistance: A semiconductor varactor with reduced parasitic resistance. A contact isolation structure (32) is formed in a well region (20). The gate contact structures (70) are formed above the contact isolation structure (32) reducing the parasitic resistance. In addition, contact structures are formed on the gate layers (50) over the well...

20060192269 - Substrate assembly for stressed systems: A substrate-assembly having a mechanical stress absorption system. The assembly includes two substrates, one of which has a mechanical stress absorbing system, such as a plurality of motifs that absorb thermoelastic stresses, to prevent cracking or destruction of the substrates or separation of one substrate from the other....

20060192270 - Semiconductor integrated circuit device and process for manufacturing the same: A large area dummy pattern DL is formed in a layer underneath a target T2 region formed in a scribe region SR of a wafer. A small area dummy pattern in a lower layer and a small area dummy pattern Ds2 in an upper layer are disposed in a region...

20060192271 - Method of manufacturing a dielectric layer and corresponding semiconductor device: A polycrystalline dielectric layer is formed wherein the dielectric layer comprises a first dielectric material containing an oxide or nitride and a second material contributing to less than 1% in weight to the dielectric layer, forming a non-conductive oxide or nitride having an enthalpy lower than the enthalpy of the...

20060192272 - Wafer level hermetically sealed mems device: A hermetically sealed microelectromechanical system (MEMS) package includes a MEMS switch having a movable portion and a stationary portion with an electrical contact thereon. A glass lid is anodically bonded to the MEMS switch to form a sealed cavity over the movable portion of the MEMS switch. The glass lid...

20060192273 - Integrated circuit package and method of manufacture thereof: An integrated circuit (IC) package 100 comprises an IC 102 and leads 104 coupled to the IC. Each lead has a first end 106 configured to be coupled to the integrated circuit and a second end 108 configured to pass through one of a plurality of mounting holes 110 extending...

20060192274 - Semiconductor package having double layer leadframe: A leadframe chip scale package includes a double leadframe assembly. The first leadframe has a central die paddle and peripheral leads, and the second leadframe, superimposed over the first leadframe in the package, has peripheral leads. The peripheral leads of both leadframes are situated in at least one row along...

20060192275 - Encapsulation method for semiconductor device having center pad: Apparatus and center pad die and substrate assemblies configured to provide for molding, in a single molding step, both an attached center pad die and other features on a die attach side of the substrate, and wire bonds an associated bond pads and other features on the opposite side of...

20060192276 - Integrated circuit and wireless ic tag: In a wireless IC tag, on which an integrated circuit and a small antenna are integrally mounted, a radiation-shielding material covers only the integrated circuit (IC chip) portion. Thus, the area of the small antenna covered by the radiation-shielding material is minute, and it is possible to minimally suppress a...

20060192277 - Chip stack employing a flex circuit: A chip stack employing BGA or FBGA integrated circuit chip packages is provided. Two chip packages have bottom surfaces attached with sets of electrical contacts, which are oriented towards each other and are electrically connected to conductive patterns formed within the same flex substrate. One set contacts a conductive pattern...

20060192278 - Interface module for connecting lsi packages, and lsi-incorporating apparatus: An interface module for connecting LSI packages includes a connecting member which is to be mounted on an LSI package including an LSI chip and which includes lines to be electrically connected to the LSI package, an optoelectronic transducer which is mounted on the connecting member, which is connected to...

20060192279 - Ultra thin dual chip image sensor package structure and method for fabrication: A stacked image sensor package contains an image sensor chip and a peripheral chip. A support pad for the peripheral chip adheres to a top surface of the peripheral chip, eliminating the need for a support member that otherwise would contribute to the thickness of the package. Thermal dissipation is...

20060192280 - Method of forming electronic devices: A method of forming polymer reinforced solder-bumped containing device or substrate is described. The method comprises the following steps: providing a device or substrate having at least one solder bump formed thereon; coating a predetermined portion of the device or substrate with a curable polymer reinforcement material forming a layer...

20060192281 - Methods for sealing chambers of microelectronic packages: Microelectronic packages having chambers and sealing materials, and methods of making the packages, and sealing the chambers, are disclosed. An exemplary package may include a first surface, a second surface, a solid sealing material including an intermetallic compound, such as, for example, of gallium or another relatively low melting material,...

20060192282 - Semiconductor device: A mounting board has a plurality of semiconductor memory devices operated in sync with a clock signal, and a semiconductor data processing device which access-controls the semiconductor memory devices. Layouts of data-system terminals of the semiconductor memory devices with respect to memory access terminals of the semiconductor data processing device...

20060192283 - Semiconductor wafer assemblies: An elevated containment structure in the shape of a wafer edge ring surrounding a surface of a semiconductor wafer is disclosed, as well as methods of forming and using such a structure. In one embodiment, a wafer edge ring is formed using a stereolithography (STL) process. In another embodiment, a...

20060192285 - Method for producing a plurality of electronic devices: An electronic device has external contact elements projecting from at least one external contact side of a plastic housing. The external contact elements have an internal section and an external section. The external section has an external contact region tapering away from the external contact side. An external contact element...

20060192284 - Method of forming an encapsulation layer on a back side of a wafer: A manufacturing method of forming an encapsulation layer on a back surface of a wafer, the method comprising the steps of: providing the wafer having the back surface and an active surface opposing to the back surface; providing an encapsulation disposed only on the back surface of the wafer, and...

20060192289 - Integrated connection arrangements: A connection arrangement having an outer conductive structure arranged at least partly or completely in a cutout of an electrical insulation layer is provided. An inner conductive structure is arranged at the bottom of the cutout on one side of the insulation layer. The inner conductive structure adjoins the outer...

20060192287 - Interconnecting substrate and semiconductor device: An interconnecting substrate is provided with a base insulating film having a sunken section in a bottom surface thereof, a first interconnection provided in the sunken section, a via hole formed in the base insulating film, and a second interconnection which is connected to the first interconnection via a conductor...

20060192286 - Semiconductor device: Disclosed herein is a semiconductor device having a multi-layer wiring structure includes a plurality of wiring layers laminated on a substrate, the wiring layers each including a buried wiring and a via formed by filling with a conductive material the inside of a wiring trench formed on the face side...

20060192288 - Semiconductor integrated device and method of providing shield interconnection therein: A method of providing shield interconnection, the method shielding an interconnection pattern to be shielded with shield interconnection patterns for shielding on the substrate of a semiconductor integrated device, is disclosed. The method includes the steps of disposing multiple interconnection layers having the corresponding shield interconnection patterns formed therein so...

20060192290 - Connection technology for power semiconductors comprising a layer of electrically insulating material that follows the surface contours: A layer of electrically insulating material is applied to a substrate and a component located thereon, in such a way that said layer follows the surface contours....

20060192291 - Electronic device: An electronic device according to an embodiment of the invention includes a pair of members which are connected to each other by a connecting portion layer interposed between connecting portions respectively formed thereon and have thermal expansion coefficients different from each other, wherein the connection layer is formed by diffusion...

20060192292 - Semiconductor chip package and method of manufacture: A semiconductor chip package and method of making the same. A first chip unit includes a first substrate and a first IC chip electrically connected to the first substrate. A second chip unit includes a second substrate and a second IC chip electronically connected to the second substrate. An adhesive...

20060192296 - Chip carrier and system including a chip carrier and semiconductor chips: A chip carrier includes a first surface and a second surface that opposes the first surface. The chip carrier acts as a heat sink for semiconductor chips arranged on it. A first recess is provided in the first surface, and a second recess is provided in the second surface. First...

20060192294 - Chip scale package having flip chip interconnect on die paddle: A flip chip lead frame package includes a die and a lead frame having a die paddle and leads, and has interconnection between the active site of the die and the die paddle. Also, methods for making the package are disclosed....

20060192293 - Electronic device, standoff member, and method of manufacturing electronic device: An electronic device comprises a semiconductor device having a package substrate with bumps. The semiconductor device is bonded to a mounting substrate by flip-chip bonding. A standoff member supports the package substrate on the mounting substrate with a predetermined standoff between the package substrate and the mounting substrate. The standoff...

20060192295 - Semiconductor package flip chip interconnect having spacer: A flip chip lead frame package includes a die and a lead frame having a die paddle and leads, and has a spacer to maintain a separation between the die and the die paddle. Also, methods for making the package are disclosed....

20060192298 - Semiconductor device with surface-mountable outer contacts, and process for producing it: A semiconductor device with surface-mountable outer contacts and to a process for producing it is disclosed. In one embodiment, surface-mountable outer contacts are arranged on outer contact connection surfaces on the underside of the semiconductor device. In their respective center region, the outer contact connection surfaces have at least one...

20060192297 - System and method for reducing voltage drops in integrated circuits: In one embodiment, a die arrangement is disclosed in which a wire-bond pad may be operatively coupled to a power supply via a wire bond. A first pad may be operatively coupled to the wire-bond pad. A second pad may be operatively coupled to the first pad via a redistribution...

20060192299 - Manufacturing method for electronic device: A manufacturing method for electronic device, includes: forming a first interconnection on a substrate; disposing a pedestal having a predetermined shape on the substrate; and forming a second interconnection connecting to the first interconnection, extending onto the pedestal....

20060192300 - Integrated circuit with staggered differential wire bond pairs: An integrated circuit comprises an integrated circuit package and one or more circuit elements disposed within the integrated circuit package. The integrated circuit also comprises at least two differential wire bond pairs providing connections for at least one of the one or more circuit elements. Proximate differential wire bond pairs...

20060192301 - Semiconductor device with a protected active die region and method therefor: A semiconductor device includes a semiconductor die having a plurality of contact pad sites, a plurality of contact pads, an encapsulant barrier, and an encapsulant. A plurality of contact pads is in electrical contact with a predetermined corresponding different one of the contact pad sites. An encapsulant barrier is positioned...

20060192302 - Self-compensating mark design for stepper alignment: A system and method for fabricating integrated circuits using four fine alignment targets per stepper shot. The four alignment targets are disposed within the scribe line on each side of a four-sided stepper shot. The targets on opposites sides of the region are located in mirror-image positions. For example, in...

20060192303 - Semiconductor device, manufacturing method and mounting method of the semiconductor device, circuit board, and electronic apparatus: To easily determine an orientation of a semiconductor device, a semiconductor device includes a substrate including electrode electrically connected to an integrated circuit, an external terminal electrically connected to the electrode, and a light transmissive insulation layer provided on the external terminal side of the substrate, and a mark provided...

20060192304 - Magnetic annealing sequences for patterned mram synthetic antiferromagnetic pinned layers: A method is provided for fabricating a fixed layer for a MRAM device. The method includes providing the fixed layer. The fixed layer includes an antiferromagnetic pinning layer over a substrate and a ferromagnetic pinned layer over the pinning layer, the pinned layer having a first thickness. The fixed layer...

20060186394 - Snse-based limited reprogrammable cell: Methods and apparatus for providing a memory device that can be programmed a limited number of times. According to exemplary embodiments, a memory device and its method of formation provide a first electrode, a second electrode and a layer of a chalcogenide or germanium comprising material between the first electrode...

20060186396 - Optical element and method for manufacturing the same: An optical element has: an emission section including a first semiconductor layer of a first conductivity type, an active layer formed above the first semiconductor layer and a second semiconductor layer of a second conductivity type formed above the active layer; an interlayer dielectric layer; and an electrostatic breakdown prevention...

20060186395 - Thin-film capacitative element and electronic circuit and electronic equipment including the same: A thin film capacitive element according to the present invention includes between a first electrode layer and a second electrode layer a dielectric layer formed of a dielectric material containing a bismuth layer structured compound having a composition represented by the stoichiometric compositional formula: (Bi2O2)2+(Am−1BmO3m+1)2− but containing bismuth (Bi) in...

20060186397 - Semiconductor substrates having useful and transfer layers: A semiconductor substrate that includes a relatively thin monocrystalline useful layer, an intermediate layer transferred from a source substrate, and a relatively thick layer of a support present on one of the useful layer of the intermediate layer. The support is made of a deposited material that has a lower...

20060186401 - Carbonyl-functionalized thiophene compounds and related device structures: Carbonyl-functionalized oligo/polythiophene compounds, and related semiconductor components and related device structures....

20060186400 - Organic photodiode and method for manufacturing the organic photodiode: In an organic photodiode, in a gap between a transparent anode formed on a glass substrate, and a reflection cathode formed oppositely thereto, a plurality of light receiving parts as layers of light absorbing composition, and partition walls for insulating between transparent anode and reflection cathode and insulating between adjacent...

20060186398 - Organic semiconductor device with multiple protective layers and the method of making the same: An organic semiconductor device with multiple protective layers and the method of making the same are described. A first protective layer is formed by vapor phase deposition on an organic thin-film transistor. A second protective layer is then formed on the first protective layer. Therefore, the organic thin-film transistor is...

20060186402 - Providing driving current arrangement for oled device: A method of making a current type active matrix OLED device, includes providing a semiconductor layer, a conductive layer, and an insulator layer therebetween over a substrate, providing an organic light emitting diode over either the semiconductor layer or over the conductive layer for each pixel, and forming a first...

20060186399 - Semiconductor apparatus and fabrication method of the same: It is an object of the present invention to provide a semiconductor device capable of preventing deterioration due to penetration of moisture or oxygen, for example, a light-emitting apparatus having an organic light-emitting device that is formed over a plastic substrate, and a liquid crystal display apparatus using a plastic...

20060186404 - Dummy wafer: A dummy wafer including a carbon fiber reinforced plastic (CFRP). Specifically the dummy wafer has a wafer substrate including CFRP, the substrate has two skin layers disposed on respective principal surface side and a core layer interposed between the skin layers, and each of the skin layers has multiple one-dimensionally...

20060186406 - Method and system for qualifying a semiconductor etch process: A method of manufacturing a semiconductor device by qualifying an etch process. A semiconductor substrate is subjected to a predefined etch process to produce a partially-etched film. A scatterometry signature of the partially-etched film is produced. The scatterometry signature is used to determine if a physical property of the partially-etched...

20060186403 - Semiconductor device: The present invention is such that a semiconductor device has, on a substrate (10), a first functional area (1) (for example, a storage element area) and a second functional area (2) (for example, a driving circuitor signal processing circuit), wherein, if the substrate (10) is viewed in a planar fashion,...

20060186405 - Semiconductor device and manufacturing process therefor: A semiconductor device 100 has a probing mark 111 forming region; a bonding pad 110 having a bonding region 113; and a check mark 120 separate from the bonding pad 110. In the configuration, the probing mark 111 forming region and the bonding region 113 can be identified on the...

20060186407 - Device for measuring the reflection factor: A device for measuring the reflection factor by irradiating a measurement area of a microchip with light, and in which a light receiving part is made to receive light reflected from the measurement area for determination of the reflection factor of the measurement area. The light receiving part is located...

20060186409 - Liquid crystal display device and method for manufacturing the same: The invention provides a novel technology where a TFT array substrate for a display device is formed with three photomasks. The invention is achieved by using the novel technology in combination with a well-known four-masks process. For the novel technology, during the lithography process where a photosensitive acrylic resin film...

20060186408 - Solid-state imaging device: A solid-state imaging device is provided and has a plurality of pixel parts including three photoelectric conversion layers stacked above a semiconductor substrate, the plurality of pixel parts being arranged above the semiconductor substrate. The three photoelectric conversion layers, respectively, included in one pixel part are interposed between pixel electrode...

20060186410 - Thin film transistor and flat panel display device including the same: A thin film transistor including a stop layer is disclosed. In one embodiment, the thin film transistor includes a substrate, a gate electrode formed on the substrate, a source electrode and a drain electrode insulated from the gate electrode, a semiconductor layer insulated from the gate electrode and having: a...

20060186411 - Thin film transistor array substrate, manufacturing method thereof, and mask: A thin film transistor array substrate including a gate pattern having a gate electrode, a gate line connected to the gate electrode, and a gate pad connected to the gate line, a source/drain pattern having a source electrode, a drain electrode, a data line connected to the source electrode, and...

20060186412 - Crystallization method, crystallization apparatus, processed substrate, thin film transistor and display apparatus: There are provided a crystallization method which can design laser beam having a light intensity and a distribution optimized on an incident surface of a substrate, form a desired crystallized structure while suppressing generation of any other undesirable structure area and satisfy a demand for low-temperature processing, a crystallization apparatus,...

20060186414 - Array substrate, display apparatus having an array substrate, and method for manufacturing an array substrate: A substrate includes an array area and a data pad area adjacent to the array area. A gate line, a data line and a switching device are formed in the array area of the substrate. A data pad extending from an end of the data line and a supporter provided...

20060186413 - Display device and manufacturing method of the same: It is an object of the present invention to provide a method for manufacturing a display device in which unevenness generated under a light-emitting element does not impart an adverse effect on the light-emitting element. It is another object of the invention to provide a method for manufacturing a display...

20060186415 - Thin film semiconductor device, method of manufacturing the same, and display: Irradiation with laser light is conducted, whereby an external region of a semiconductor thin film located on the outer side relative to a pattern of a light absorbing layer is thermally melted, and the light absorbing layer is heated, without melting an internal region of the semiconductor thin film located...

20060186416 - Multiple layer and crystal plane orientation semiconductor substrate: A semiconductor on insulator substrate and a method of fabricating the substrate. The substrate including: a first crystalline semiconductor layer and a second crystalline semiconductor layer; and an insulating layer bonding a bottom surface of the first crystalline semiconductor layer to a top surface of the second crystalline semiconductor layer,...

20060186418 - External extraction light emitting diode based upon crystallographic faceted surfaces: A light emitting diode is disclosed that includes a support structure and a Group III nitride light emitting active structure mesa on the support structure. The mesa has its sidewalls along an indexed crystal plane of the Group III nitride. A method of forming the diode is also disclosed that...

20060186417 - Light emitting diode and method making the same: A light emitting diode and the method of the same are provided. The light emitting diode includes a light emitting structure and a metal reflective layer. The light emitting structure includes two semiconductor layers and an active layer. Oxide elements are added into the metal reflective layer to improve the...

20060186419 - Light-emitting device: A light-emitting device includes a first electrode, a second electrode, a porous layer and an electrolyte. The first electrode comprises a first surface. The second electrode comprises a second surface. The porous layer is formed of n-type semiconductor and provided on the first surface of the first electrode or the...

20060186420 - Semiconductor device such as semiconductor laser device and manufacturing method therefor, and optical transmission module and optical disk unit employing the semiconductor laser device: After a p-type cladding layer, an etching rate reducing layer and a p-type contact layer are formed in order on an n-type substrate, an etching mask is formed. Then, by using the etching mask, the p-type contact layer, the etching rate reducing layer and the p-type cladding layer are partially...

20060186421 - Schottky diode with low leakage current and fabrication method thereof: A low leakage Schottky diode and fabrication method thereof. The Schottky diode includes a n-type semiconductor; an anode having a circular periphery formed in a region above the n-type semiconductor; and a cathode formed in a region above the n-type semiconductor and having a pattern surrounding and set apart from...

20060186422 - Etching a nitride-based heterostructure: An improved solution for producing nitride-based heterostructure(s), heterostructure device(s), integrated circuit(s) and/or Micro-Electro-Mechanical System(s) is provided. A nitride-based etch stop layer that includes Indium (In) is included in a heterostructure. An adjacent layer of the heterostructure is selectively etched to expose at least a portion of the etch stop layer....

20060186425 - Led lamp: An LED lamp 100 according to the present invention includes: a substrate 20 with an upper surface; a plurality of LED chips 10, which are arranged on the upper surface of the substrate 20; and a reflector 30, which has reflective surfaces that reflect emissions of the respective LED chips...

20060186423 - Method of making optical light engines with elevated leds and resulting product: An optical light engine is fabricated by providing a thermally conductive base having one or more mounting pedestals for elevating one or more LED die above the base's surface. The LED die are mounted on the pedestals, electrically connected, and a mold having a molding surface for molding a dome...

20060186426 - Optical device, surface emitting type device and method for manufacturing the same: The present invention provides an optical device and a surface emitting type device which have high efficiency and a stable operation and are manufactured at high manufacturing yield. The optical device and the surface emitting type device are characterized in that they have a distributed Bragg reflector (DBR) including a...

20060186424 - White led and manufacturing method therefor: A white LED includes an LED chip formed on one main surface of a sapphire substrate, the LED chip being formed in a semiconductor stack structure including a light emitting layer and emitting light of a predetermined wavelength, a light extracting film applied on the other main surface of the...

20060186427 - Side-view type light emitting device: A side-view type light emitting device capable of effectively releasing heat generated on the surface of the substrate is provided. The side-view type light emitting device 1 comprising a substrate 1-1, a positive surface electrode 1-2, a negative surface electrode 1-3, a light emitting element 1-4, a sealing member 1-5...

20060186431 - Light emitting device provided with lens for controlling light distribution characteristic: The light emitting device comprises a substrate (2), a positive electrode (6) and a negative electrode (4) formed on the substrate (2), a light emitting diode (8) connected to the positive electrode (6) and the negative electrode (4), the transparent resin (12 and 14) that covers the light emitting diode...

20060186428 - Light emitting device with enhanced encapsulant adhesion using siloxane material and method for fabricating the device: A light emitting device and method for fabricating the device utilizes an adhesive layer of siloxane material to enhance the adhesion of an encapsulant to a light source, one or more leadframes and/or a reflector cup surface. The siloxane layer can be used in different types of light emitting devices,...

20060186430 - Light emitting diode package and fabrication method thereof: The present invention provides an LED package and the fabrication method thereof. The present invention provides an LED package including a submount silicon substrate and insulating film and electrode patterns formed on the submount silicon substrate. The LED package also includes a spacer having a through hole, formed on the...

20060186429 - Semiconductor light emitting device and method of manufacture: A light-emitting diode (“LED”) device has an LED chip attached to a substrate. The terminals of the LED chip are electrically coupled to leads of the LED device. Elastomeric encapsulant within a receptacle of the LED device surrounds the LED chip. A second encapsulant is disposed within an aperture of...

20060186432 - Polarized radiation source using spin extraction/injection: Spin-polarized electrons can be efficiently extracted from an n-doped semiconductor layer (n-S) by forming a modified Schottky contact with a ferromagnetic material (FM) and a δ-doped layer at an interface under forward bias voltage conditions. Due to spin-selection property of the FM-S junction, spin-polarized carriers appear in the n-doped semiconductor...

20060186433 - Surface-spintronics device: A surface-spintronic device operating on a novel principles of operations may be implemented as a spin conducting, a spin switching or a spin memory device. It includes a magnetic atom thin film (13) layered on a surface of a solid crystal (12) and a drain and a source electrodes (14)...

20060186434 - Vertical-conduction and planar-structure mos device with a double thickness of gate oxide and method for realizing power vertical mos transistors with improved static and dynamic performance and high scaling down density: A vertical-conduction and planar-structure MOS device having a double thickness gate oxide includes a semiconductor substrate including spaced apart active areas in the semiconductor substrate and defining a JFET area therebetween. The JFET area also forms a channel between the spaced apart active areas. A gate oxide is on the...

20060186435 - Semiconductor device and method of producing the same, and power conversion apparatus incorporating this semiconductor device: The temperature of a bipolar semiconductor element using a wide-gap semiconductor is raised using heating means, such as a heater, to obtain a power semiconductor device being large in controllable current and low in loss. The temperature is set at a temperature higher than the temperature at which the decrement...

20060186436 - Semiconductor device: A semiconductor device includes a gate electrode formed on a silicon substrate in correspondence to a channel region via a gate insulation film, and source and drain regions of p-type formed in the silicon substrate at respective outer sides of sidewall insulation films on the gate electrode, a pair of...

20060186437 - Bipolar transistor: A bipolar transistor, wherein a outgoing electrode is made of a polycrystalline Si film, and C atom, or Ge atom together with C atom are added in the polycrystalline Si film....

20060186438 - Device for thermal sensing: The present invention provides a device for thermal sensing which uses a replaceable or disposable substrate comprising channels for receiving a sample to be measured. The device according to the invention is cost-effective as the replaceable or disposable substrate can be reused....

20060186439 - Semiconductor device, a manufacturing method thereof, and a camera: A semiconductor device includes a transfer channel for transferring charge generated by photoelectric conversion, an insulating film formed on the transfer channel, and a transfer electrode for applying a transfer voltage to the transfer channel via the insulating film. The insulating film has a first thickness and a second thickness...

20060186440 - Phase change memory device and method of manufacture thereof: A method of manufacturing a memory device is provided. The method includes forming an electrode over a substrate. The method also includes forming an opening in the electrode to provide a tapered electrode contact surface proximate the opening. The method further includes forming a phase change feature over the electrode...

20060186441 - Light-emitting device, liquid-crystal display device and method for manufacturing same: The present invention provides a structure of a semiconductor device that realizes low power consumption even where increased in screen size, and a method for manufacturing the same. The invention forms an insulating layer, forms a buried interconnection (of Cu, Au, Ag, Ni, Cr, Pd, Rh, Sn, Pb or an...

20060186442 - Image sensor and method for fabricating the same: An image sensor and a method for fabricating the image sensor are provided. The image sensor includes a doped layer of a first conductivity type formed in a photodiode region defined in a semiconductor substrate, a first epitaxial layer of a second conductivity type and a second epitaxial layer of...

20060186445 - Bias-adjusted giant magnetoresistive (gmr) devices for magnetic random access memory (mram) applications: A bias-adjusted giant magnetoresistive (GMR) device includes a ferromagnetic reference layer, which has a magnetization that remains relatively fixed when a range of magnetic fields is applied, and a ferromagnetic switching layer, which has a magnetization that can be changed by applying a relatively small magnetic field. In MRAM applications,...

20060186443 - Magnetic memory: A TMR element has a free first magnetic layer, a second magnetic layer with a magnetization direction B fixed, a nonmagnetic insulating layer provided between the first magnetic layer and the second magnetic layer, a third magnetic layer provided above a surface of the first magnetic layer and having a...

20060186444 - Spin polarization amplifying transistor: An embodiment of the invention is a transistor formed in part by a ferromagnetic semiconductor with a sufficiently high ferromagnetic transition temperature to coherently amplify spin polarization of a current. For example, an injected non-polarized control current creates ferromagnetic conditions within the transistor base, enabling a small spin-polarized signal current...

20060186446 - 3-dimensional flash memory device and method of fabricating the same: In an embodiment, a 3-dimensional flash memory device includes: a gate extending in a vertical direction on a semiconductor substrate; a charge storing layer surrounding the gate; a silicon layer surrounding the charge storing layer; a channel region vertically formed in the silicon layer; and source/drain regions vertically formed on...

20060186448 - Semiconductor device memory cell: A circuit provides an inhibition to the short circuit between the bit line and the capacitance contact, without employing a self alignment contact (SAC) process. A hard mask is formed on the bit line upper surface and a side wall formed on the side surface of the bit line by...

20060186447 - Semiconductor memory and method for fabricating the same: A semiconductor memory includes: a semiconductor substrate having a protrusion; a gate insulating film formed on an upper surface of the protrusion; a gate electrode formed on the gate insulating film; diffusion regions formed in portions of the substrate on both sides of the protrusion, the diffusion regions being disposed...

20060186449 - Semiconductor device and manufacturing method therof: A semiconductor device and a manufacturing method thereof which enable to secure high yield and increase the capacity of a capacitor are provided. The semiconductor device according to the present invention includes: a plurality of capacitor layers laminated, each capacitor layer including a plurality of storage electrodes, a capacity insulating...

20060186450 - Integrated high voltage capacitor and a method of manufacture therefor: The present invention provides an integrated high voltage capacitor, a method of manufacture therefore, and an integrated circuit chip including the same. The integrated high voltage capacitor, among other features, includes a first capacitor plate (120) located over or in a semiconductor substrate (105), and an insulator (130) located over...

20060186451 - Memory device for storing electric charge, and method for fabricating it: The present device relates to memory devices for storing electric charge having memory cells and transistors arranged spatially next to them, and relates in particular to memory devices having memory cells with a high capacitance. In the memory cells which form a memory device to which the invention relates, there...

20060186452 - Capacitor of semiconductor device and method of fabricating the same: Provided is a capacitor of a semiconductor device and a method of fabricating the same. In one embodiment, the capacitor includes a lower electrode formed on a semiconductor substrate; a dielectric layer formed on the lower electrode; and an upper electrode that is formed on the dielectric layer. The upper...

20060186453 - Semiconductor device having a capacitor and a fabrication method thereof: In a semiconductor device having a capacitor and a method of fabricating the same, the semiconductor device comprises a semiconductor substrate and an insulating layer on the semiconductor substrate, a contact plug electrically connected to the semiconductor substrate and formed in the contact hole, a buffer conductive layer pattern electrically...

20060186454 - Semiconductor device and fabricating method thereof: A method of fabricating a semiconductor device is described. A substrate having a memory cell region and a high voltage circuit region are provided. First and second source/drain regions are formed in the substrate within these two regions. A silicon oxide layer, a first conductive layer and a top layer...

20060186458 - Germanium-silicon-carbide floating gates in memories: The use of a germanium carbide (GeC), or a germanium silicon carbide (GeSiC) layer as a floating gate material to replace heavily doped polysilicon (poly) in fabricating floating gates in EEPROM and flash memory results in increased tunneling currents and faster erase operations. Forming the floating gate includes depositing germanium-silicon-carbide...

20060186457 - Methods for programming a floating body nonvolatile memory: A technique to speed up the programming of a non-volatile memory device that has a floating body actively removes holes from the floating body that have accumulated after performing hot carrier injection (HCI). The steps of HCI and active hole removal can be alternated until the programming is complete. The...

20060186455 - Nand-type non-volatile memory: A non-volatile memory includes a substrate, a plurality of data storage elements positioned on the substrate, a plurality of control gates positioned above the data storage elements, an insulating layer positioned on surfaces and sidewalls of the control gates, and a bit-line positioned on the insulating layer to cross the...

20060186459 - Non-volatile memory and manufacturing method thereof: A non-volatile memory is provided. An assist gate structure is formed on a substrate such that the width at the bottom of the assist gate structure is greater than the width at the top of the assist gate structure. A floating gate is formed on one side of the assist...

20060186462 - Nonvolatile memory device and method of fabricating the same: Provided are example embodiments of fabrication methods and resulting structures suitable for use in nonvolatile memory devices formed on semiconductor substrates. The example embodiments of the gate structures include a first insulating film formed on the semiconductor substrate, a storage node formed on the first insulating film for storing charges,...

20060186456 - Nvm cell on soi and method of manufacture: A non-volatile memory (NVM) device formed in a semiconductor-on-insulator (SOI) substrate has a trap region on the source side only to speed up the process of programming. During programming of an NVM device in partially depleted SOI, holes are generated that slow down the formation of electrons hot enough to...

20060186461 - Semiconductor device and method of manufacturing the same: According to an aspect of the invention, there is provided a semiconductor device comprising a semiconductor substrate, a gate insulating film formed on the semiconductor substrate, a gate electrode formed on the gate insulating film, and a diffusion layer formed in the semiconductor substrate, a predetermined portion of the gate...

20060186460 - Split gate flash memory device having self-aligned control gate and method of manufacturing the same: In a flash memory device, which can maintain an enhanced electric field between a control gate and a storage node (floating gate) and has a reduced cell size, and a method of manufacturing the flash memory device, the flash memory device includes a semiconductor substrate having a pair of drain...

20060186464 - Nonvolatile semiconductor memory device having adjacent selection transistors connected together: A semiconductor memory device comprising a semi-conductor substrate, a plurality of cell transistors provided on the substrate, a plurality of selection gates provided on the substrate, and element-isolation regions provided between the cell transistors and between the selection gates. Each cell transistor has a floating gate provided on a gate...

20060186463 - Nonvolatile semiconductor memory devices and the fabrication process of them: The present invention enables to avoid a reduction in coupling ratio in a nonvolatile semiconductor memory device. The reduction is coupling ratio is caused due to difficulties in batch forming of a control gate material, an interpoly dielectric film material, and a floating gate material, the difficulties accompanying a reduction...

20060186465 - Dmos device having a trenched bus structure: A DMOS device having a trench bus structure thereof is introduced. The trench bus structure comprises a field oxide layer formed on a P substrate, and a trench extending from an top surface of the field oxide layer down to a lower portion of the P substrate. A gate oxide...

20060186466 - Vertical gate semiconductor device and method for fabricating the same: A first region 11 functioning as a transistor includes a drain region 111, a body region 112 formed over the drain region 111, a source region 113A formed over the body region 112 and a trench formed through the body region 112 and having a gate electrode 120 buried therein....

20060186467 - System and method for making a ldmos device with electrostatic discharge protection: A semiconductor device includes one or more LDMOS transistors and one of more SCR-LDMOS transistors. Each LDMOS transistor includes a LDMOS well of a first conductivity type, a LDMOS source region of a second conductivity type formed in the LDMOS well, and a LDMOS drain region of a second conductivity...

20060186468 - Semiconductor device and a method for manufacturing the same: Provided is a manufacturing method of a semiconductor device which has the following steps of forming a plurality of layered patterns obtained by stacking an insulating film, a conductor film for forming a floating gate electrode and another insulating film over a semiconductor substrate in the order of mention, forming...

20060186469 - Semiconductor device: A semiconductor device has a source region, a channel region and a drain region formed in order along a surface of a substrate, a vertical type bipolar transistor formed from the source region below the substrate, a base contact region of the vertical type bipolar transistor, a buried layer connected...

20060186471 - Manufacturing method for semiconductor device: A semiconductor device with simple device structure enables reduction in the number of manufacturing steps and the manufacturing cost. A gate insulation film and a gate electrode are formed in a certain area on a semiconductor substrate. A semiconductor substrate non-removed section is formed under the gate insulation film, and...

20060186470 - Strained transistor with hybrid-strain inducing layer: A semiconductor device having a hybrid-strained layer and a method of forming the same are discussed. The semiconductor device comprises: a gate dielectric over a substrate; a gate electrode over the gate dielectric; an optional pair of spacers along the sidewalls of the gate dielectric and the gate electrode; a...

20060186473 - Method of forming an implantable electronic device chip level hermetic and biocompatible electronics package using soi wafers: The invention is directed to a hermetically packaged and implantable integrated circuit for electronics that is made my producing streets in silicon-on-insulator chips that are subsequently coated with a selected electrically insulating thin film prior to completing the dicing process to yield an individual chip. A thin-layered circuit may transmit...

20060186476 - Method of manufacturing thin film transistor: On a glass substrate an insulating protective layer comprising SiO2 film is formed, and an active layer comprising a p-Si film is formed thereon. Further, a first gat insulating film comprising an SiN film which serves as a lower layer and a second gate insulating film comprising an SiN film...

20060186472 - Semiconductor apparatus and complimentary mis logic circuit: A configuration is adopted comprising an NchMOS transistor 1 equipped with an insulating isolation layer 4 providing insulation and isolation using an SOI structure, and a capacitor formed using an insulating film, with a silicon substrate B being made thin and substrate capacitance being reduced. The NchMOS transistor 1 is...

20060186474 - Semiconductor device and method of manufacturing the same: It is an object to provide a semiconductor device having an SOI structure in which an electric potential of a body region in an element formation region isolated by a partial isolation region can be fixed with a high stability. A MOS transistor comprising a source region (51), a drain...

20060186475 - Thin film transistor having high mobility and high on-current and method for manufacturing the same: An image input apparatus includes an insulating substrate; polycrystalline silicon islands formed on said insulating substrate; pixels each including thin film transistors and a photodiode formed above said thin film transistors, each of the thin film transistors have a source region, a channel region and a drain region foamed in...

20060186477 - Semiconductor device: In a conventional semiconductor device, there is a problem that an N-type diffusion region provided for protecting an element from an overvoltage is narrow and a breakdown current is concentrated so that a PN junction region for protection is broken. In a semiconductor device of the present invention, an N-type...

20060186478 - Method for optimising transistor performance in integrated circuits: A method (300) for optimising transistor performance in semiconductor integrated circuits built from standard cells (12), or custom transistor level layout, is disclosed. An active area of NMOS diffusion is extended with a joining area (102) between two adjacent cells (112) having the same net on diffusion at the adjacent...

20060186479 - Semiconductor memory device having local etch stopper and method of manufacturing the same: A semiconductor memory device includes a semiconductor substrate in which a cell region and a core and peripheral region are defined. The device further comprises isolation layers formed in the semiconductor substrate to define active regions, a first gate electrode structure formed in the cell region and a second gate...

20060186480 - Charge-trapping memory device and method for production: A thin SiGe layer is provided as an additional lower gate electrode layer and is arranged between a thin gate oxide and a gate electrode layer, preferably of polysilicon. The SiGe layer can be etched selectively to the gate electrode and the gate oxide and is laterally removed adjacent the...

20060186481 - Non-volatile memory and manufacturing method and operating method thereof: A non-volatile memory having many memory cell columns is provided. Each memory cell column includes a plurality of memory cells formed on a substrate. A deep p-type well is disposed in the substrate and an n-type well is disposed on the deep p-type well. A shallow p-type well isolated by...

20060186483 - Phase change memory devices employing cell diodes and methods of fabricating the same: Phase change memory devices having cell diodes and related methods are provided, where the phase change memory devices include a semiconductor substrate of a first conductivity type and a plurality of parallel word lines disposed on the semiconductor substrate, the word lines have a second conductivity type different from the...

20060186482 - Shared contacts for mosfet devices: In one aspect, the present invention provides electronic devices that comprise a doped semiconductor shared contact between (a) a gate conductor region of at least one transistor and (b) a source/drain diffusion region of at least one transistor. One specific example of such as shared contact, among many others, is...

20060186484 - Field effect transistor with narrow bandgap source and drain regions and method of fabrication: A transistor having a narrow bandgap semiconductor source/drain region is described. The transistor includes a gate electrode formed on a gate dielectric layer formed on a silicon layer. A pair of source/drain regions are formed on opposite sides of the gate electrode wherein said pair of source/drain regions comprise a...

20060186485 - Nand-type flash memory devices and fabrication methods thereof: In an embodiment, a memory device includes a semiconductor substrate having cell active regions and a peripheral active region. Plugs, including bit line contact plugs, a common source line, a peripheral gate interconnection contact plug, and peripheral metal interconnection contact plugs are formed of the same conductive layer through the...

20060186487 - Pmos transistor with increased effective channel length in the peripheral region and method of manufacturing the same: In manufacturing a PMOS transistor, a semiconductor substrate having an active region and a field region is formed with a hard mask layer, which covers a center portion of the active region on the substrate in a lengthwise direction of a channel. The hard mask layer exposes the center portion...

20060186486 - Semiconductor device and method for manufacturing the same: A semiconductor device includes (i) a semiconductor layer, (ii) a first insulating film formed in the semiconductor layer, (iii) a conductive film continuously formed on the semiconductor layer and the first insulation film in a line shape, (iv) a second insulating film formed between the conductive film and the semiconductor...

20060186488 - Semiconductor device and method of manufacturing semiconductor device: Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating f