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Solid-state imaging device and electronic apparatus / Sony Corporation




Solid-state imaging device and electronic apparatus


A solid-state imaging device and method of making a solid-state imaging device are described herein. By way of example, the solid-state imaging device includes a first wiring layer formed on a sensor substrate and a second wiring layer formed on a circuit substrate. The sensor substrate is coupled to the circuit substrate, the first wiring layer and the second wiring layer being positioned between the sensor substrate and the circuit substrate. A first electrode is formed...



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USPTO Applicaton #: #20170062499
Inventors: Takeshi Yanagita, Keiji Mabuchi


The Patent Description & Claims data below is from USPTO Patent Application 20170062499, Solid-state imaging device and electronic apparatus.


TECHNICAL FIELD

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The present disclosure relates to a back-side illumination type solid-state imaging device and an electronic apparatus having the solid-state imaging device.

BACKGROUND

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ART

In a solid-state imaging device while aiming to improve photoelectric conversion efficiency or sensitivity of incident light, a so-called back-side illumination type structure in which a drive circuit is formed on a surface side of a semiconductor substrate and a back surface side is a light receiving surface has been proposed. In addition, separately from the semiconductor substrate in which a photoelectric conversion element is formed, a three-dimensional (3D) structure in which a circuit substrate with a drive circuit formed thereon is prepared and bonded to a surface opposite to the light receiving surface of the semiconductor substrate has been also proposed. For example, a configuration in which a photodiode (PD), a floating diffusion (FD), and a pixel transistor other than a transfer gate and a transfer transistor are formed on mutually different substrates, and the substrates are bonded with each other has been proposed (For example, see PTL 1).

CITATION LIST Patent Literature

PTL 1: Japanese Unexamined Patent Application Publication (Translation of PCT Application) No. 2011-517506

SUMMARY

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OF INVENTION Technical Problem

In the back-side illumination type solid-state imaging device having the above-described configuration in which the substrates are bonded with each other, there is a demand for improving reliability of the solid-state device by improving joining reliability between the substrates.

It is desirable to provide a solid-state imaging device and an electronic apparatus that may improve reliability.

Solution to Problem

A solid-state imaging device and method of making a solid-state imaging device are described herein. By way of example, the solid-state imaging device includes a first wiring layer formed on a sensor substrate and a second wiring layer formed on a circuit substrate. The sensor substrate is coupled to the circuit substrate, the first wiring layer and the second wiring layer being positioned between the sensor substrate and the circuit substrate. A first electrode is formed on a surface of the first wiring layer, and a second electrode is formed on a surface of the second wiring layer. The first electrode is in electrical contact with the second electrode.

Further by way of example, the method for making a solid-state imaging device includes forming a first wiring layer on a sensor substrate, forming a second wiring layer on a circuit substrate, forming a first electrode on a surface of the first wiring layer, forming a second electrode on a surface of the second wiring layer, and coupling the sensor substrate to the circuit substrate with the first wiring layer and the second wiring layer being between the sensor substrate and the circuit substrate.

According to the above-described solid-state imaging device, the photodiode and the floating diffusion are formed on the first semiconductor substrate, and the second transistor is formed on the second semiconductor substrate. The floating diffusion wirings that connect the second transistor from the floating diffusion are connected by the first electrode and the second electrode. In this manner, in the floating diffusion wiring, a connection surface between the first semiconductor substrate and the second semiconductor substrate is joined with the first electrode and the second electrode, and therefore joining reliability of wiring and joining reliability between the substrates are improved. Accordingly, reliability of the solid-state imaging device and the electronic apparatus having the solid-state imaging device may be improved.

Advantageous Effects of the Invention

According to the present disclosure, it is possible to improve reliability of a solid-state imaging device and an electronic apparatus.

BRIEF DESCRIPTION OF DRAWINGS

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FIG. 1 is a schematic configuration diagram showing an example of a solid-state imaging device to which the present disclosure is applied.

FIG. 2 is a diagram showing a planar arrangement of a pixel unit including a four-pixel sharing unit of a solid-state imaging device according to a first embodiment of the present disclosure.

FIG. 3 is a configuration of a line cross-section of the pixel unit shown in FIG. 2.

FIG. 4A is a diagram showing a configuration of a first electrode and a second electrode.

FIG. 4B is a diagram showing a configuration of a first electrode and a second electrode.

FIG. 4C is a diagram showing a configuration of a first electrode and a second electrode.

FIG. 4D is a diagram showing a configuration of a first electrode and a second electrode.

FIG. 4E is a diagram showing a configuration of a first electrode and a second electrode.

FIG. 5 is a diagram showing a planar arrangement of a GND wiring and a TRG wiring in a four-pixel sharing unit.

FIG. 6A is a plan diagram of a pixel area in which GND/TRG wirings are formed.

FIG. 6B is an enlarged diagram of a VIB portion shown in FIG. 6A.

FIG. 6C is a cross-sectional diagram of GND/TRG wirings around the pixel area shown in FIG. 6A.

FIG. 7 is a cross-sectional diagram showing a configuration of a first modification example of a solid-state imaging device according to a first embodiment of the present disclosure.

FIG. 8 is a cross-sectional diagram showing a configuration of a second modification example of a solid-state imaging device according to a first embodiment of the present disclosure.

FIG. 9 is a diagram showing a configuration of a IX-IX line cross-section of a pixel unit shown in FIG. 8.

FIG. 10 is a cross-sectional diagram showing a configuration of a third modification example of a solid-state imaging device according to a first embodiment of the present disclosure.

FIG. 11 is a diagram showing a planar arrangement of a pixel unit including an eight-pixel sharing unit of a solid-state imaging device according to a second embodiment of the present disclosure.




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stats Patent Info
Application #
US 20170062499 A1
Publish Date
03/02/2017
Document #
15348556
File Date
11/10/2016
USPTO Class
Other USPTO Classes
International Class
01L27/146
Drawings
23


Electrode Electronic Apparatus Imaging

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20170302|20170062499|solid-state imaging device and electronic apparatus|A solid-state imaging device and method of making a solid-state imaging device are described herein. By way of example, the solid-state imaging device includes a first wiring layer formed on a sensor substrate and a second wiring layer formed on a circuit substrate. The sensor substrate is coupled to the |Sony-Corporation
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