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Reactive sputtering method and reactive sputtering apparatus / Canon Anelva Corporation




Title: Reactive sputtering method and reactive sputtering apparatus.
Abstract: The present invention provides a reactive sputtering method and a reactive sputtering apparatus which suppress a film quality change caused by a temperature variation in continuous substrate processing. An embodiment of the present invention performs reactive sputtering while adjusting a flow rate of reactive gas according to the temperature of a constituent member facing a sputtering space. Specifically, a temperature sensor is provided on a shield and the flow rate is adjusted according to the temperature. Thereby, even when a degassing amount of a film adhering to the shield changes, a partial pressure of reactive gas can be set to a predetermined value. For a resistance change layer constituting a ReRAM, a perovskite material such as PrCaMnO3 (PCMO), LaSrMnO3 (LSMO), and GdBaCoxOy (GBCO), a two-element type transition metal oxide material which has a composition shifted from a stoichiometric one, such as nickel oxide (NiO), vanadium oxide (V2O5), and the like are used. ...


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USPTO Applicaton #: #20140158524
Inventors: Yuichi Otani, Takashi Nakagawa


The Patent Description & Claims data below is from USPTO Patent Application 20140158524, Reactive sputtering method and reactive sputtering apparatus.




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stats Patent Info
Application #
US 20140158524 A1
Publish Date
06/12/2014
Document #
14180729
File Date
02/14/2014
USPTO Class
20419213
Other USPTO Classes
International Class
23C14/00
Drawings
8


Nickel Vanadium Reram Sputtering Method Perovskite Nickel Oxide Vanadium Oxide

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Canon Anelva Corporation


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Chemistry: Electrical And Wave Energy   Non-distilling Bottoms Treatment   Coating, Forming Or Etching By Sputtering   Glow Discharge Sputter Deposition (e.g., Cathode Sputtering, Etc.)   Measuring Or Testing (e.g., Of Operating Parameters, Property Of Article, Etc.)  

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20140612|20140158524|reactive sputtering method and reactive sputtering apparatus|The present invention provides a reactive sputtering method and a reactive sputtering apparatus which suppress a film quality change caused by a temperature variation in continuous substrate processing. An embodiment of the present invention performs reactive sputtering while adjusting a flow rate of reactive gas according to the temperature of |Canon-Anelva-Corporation
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