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Reactive sputtering method and reactive sputtering apparatus

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Reactive sputtering method and reactive sputtering apparatus


The present invention provides a reactive sputtering method and a reactive sputtering apparatus which suppress a film quality change caused by a temperature variation in continuous substrate processing. An embodiment of the present invention performs reactive sputtering while adjusting a flow rate of reactive gas according to the temperature of a constituent member facing a sputtering space. Specifically, a temperature sensor is provided on a shield and the flow rate...
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USPTO Applicaton #: #20140158524
Inventors: Yuichi Otani, Takashi Nakagawa



The Patent Description & Claims data below is from USPTO Patent Application 20140158524, Reactive sputtering method and reactive sputtering apparatus.

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stats Patent Info
Application #
US 20140158524 A1
Publish Date
06/12/2014
Document #
14180729
File Date
02/14/2014
USPTO Class
20419213
Other USPTO Classes
International Class
23C14/00
Drawings
8


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Nickel
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Perovskite
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Canon Anelva Corporation

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Chemistry: Electrical And Wave Energy   Non-distilling Bottoms Treatment   Coating, Forming Or Etching By Sputtering   Glow Discharge Sputter Deposition (e.g., Cathode Sputtering, Etc.)   Measuring Or Testing (e.g., Of Operating Parameters, Property Of Article, Etc.)  

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