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Filter chip element and method of preparing the same

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Filter chip element and method of preparing the same


Disclosed herein is a filter chip element including a ferrite substrate, internal coil patterns formed on the ferrite substrate; and a ferrite composite layer filled between the internal coil patterns formed on the ferrite substrate, wherein the ferrite composite layer includes foaming resin, thereby increasing magnetic permeability and a Q value which are important characteristics of a filter chip element for noise prevention among electromagnetic shielding components.

Browse recent Samsung Electro-mechanics Co., Ltd. patents - Suwon-si, KR
USPTO Applicaton #: #20140132366 - Class: 333185 (USPTO) -


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The Patent Description & Claims data below is from USPTO Patent Application 20140132366, Filter chip element and method of preparing the same.

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CROSS REFERENCE(S) TO RELATED APPLICATIONS

This application claims the benefit under 35 U.S.C. Section 119 of Korean Patent Application Ser. No. 10-2012-0128156, entitled “Filter Chip Element and Method of Preparing the Same” filed on Nov. 13, 2012, which is hereby incorporated by reference in its entirety into this application.

BACKGROUND OF THE INVENTION

1. Technical Field

The present invention relates to a filter chip element and a method of preparing the same.

2. Description of the Related Art

Recently, data transmitting and receiving functions of an electronic device such as a digital television (TV), a smart phone, and a notebook computer at a high frequency band have been widely used. Also, in the future, it is expected that multifunctional and compound electronic devices formed by connecting electronic devices to each other via a universal serial bus (USB) or other communication ports as well as a single electronic device are highly used.

In order to quickly transmit and receive data, data may be transmitted and received through as many as possible internal signal lines at a high frequency band of GHz moved from a previous frequency band of MHz.

When data is transmitted and received between a main device and a peripheral device at a high frequency band of GHz in order to transmit and receive a large amount of data, it is difficult to smoothly process the data due to signal delay and other interferences.

In particular, various port to port connections such as a communication line and an image and audio signal lines are used as in a digital TV, issues in terms of internal signal line delay and transmitting and receiving distortion may occur more frequently.

In order to overcome this problem, counter electromagnetic interference (EMI) components are disposed around connections between IT products and peripheral devices. Conventional wound and stack type counter EMI components have large sizes of chip elements and low electrical properties, and thus, may be used only in a limited region of a large size circuit board. However, due to the use of slimmed, miniaturized, compound, and multifunctional electronic devices, there is a need for counter EMI components satisfying these functions.

In order to form a conventional counter EMI component, ferrite powders and solvents, which have the same composite, a binder, other dispersants, or the like are mixed in a slurry form or a paste form, die casting or print process is performed on the resultant mixture to prepare green sheets, and then the green sheets are stacked to a desired thickness and are fired.

If necessary, during the firing, the green sheets are pressed with a predetermined weight. A fired substrate may have different thicknesses at an edge portion and a central portion, may be bent, and may break or crack due to weak shock Thus, it is not appropriate to use the fired substrate as a ferrite substrate for EMI and electromagnetic compatibility (EMC), such as a common mode filter product.

Firing density of the fired substrate locally varies. Air voids are formed in a non-fired portion. Thus, chemical solutions used in photolithography penetrate into the fired substrate, thereby causing internal air voids or erosion.

A ferrite substrate used in a thin film type common mode filter is formed by forming internal conductive patterns on a fired base substrate by photolithography process and then mixing ferrite and resin to form a ferrite composite layer thereon. However, the ferrite composite layer has lower magnetic permeability and a lower Q value than the fired ferrite substrate formed on a lower portion, thereby causing impedance reduction of actual chip characteristic.

The ferrite composite layer requires dispersibility of ferrite powders and resin, adhesion therebetween, and the like.

Conventional ferrite resin has low dispersibility, difficulty in control of powder particle sizes, and low adhesion between interfaces, and thus, a resin layer formed of the ferrite resin may crack and have low deformation strength, thereby causing dimension error. Thus, due to the dimension error, magnetic permeability and a Q value which are important characteristics of an inductor chip element are reduced.

It is difficult to form an internal circuit required to obtain various functions with a small area in order to satisfy miniaturization of internal conductive patterns, and thus, there is a limit in using conventional wound and stack type noise filters in an electronic component. Accordingly, there is a need to manufacture a thin film type common mode filter in order to address the problems of wound and stack type common mode filters.

As shown in FIG. 1, the thin film type common mode filter is manufactured by forming an insulating layer 20 including an organic material on a fired ferrite substrate 10, forming conductive patterns 30 thereon and then mixing organic resin and ferrite powders to form a ferrite composite layer 40.

RELATED ART DOCUMENT Patent Document

(Patent Document 1) Japanese Patent Laid-Open Publication No. 2000-077222

SUMMARY

OF THE INVENTION

An object of the present invention is to provide a filter chip element that prevents noise in both a common mode and a differential mode and has increased magnetic permeability and impedance value.

Another object of the present invention is to provide a method of preparing the filter chip element.

According to an exemplary embodiment of the present invention, there is provided a filter chip element including a ferrite substrate, internal coil patterns formed on the ferrite substrate, and a ferrite composite layer filled between the internal coil patterns formed on the ferrite substrate, wherein the ferrite composite layer includes foaming resin.

The foaming resin may include at least one selected from the group consisting of N-isopropyl acrylamide (NIPAM), hydroxyethyl acrylate (HEMA), polyvinylidenefluoride (PVDF), polymethylsilicone (PMS), polycarbosilane (PCS), polyurethane resin, polybutadiene resin, and copolymer thereof.

The foaming resin may be one component type resin or two component type resin.

The ferrite composite layer may further include oxide powder.

The oxide powder may include at least two metal oxides selected from the group consisting of iron (Fe), copper (Cu), nickel (Ni), zinc (Zn), cobalt (Co), and silicon (Si).

The oxide powder may have a spherical shape and an average diameter thereof is 5 to 45 μm.

The ferrite composite layer may include the oxide powder and the foaming resin with a ratio of 60 to 80 wt %:40 to 20 wt %.

The ferrite composite layer may have a structure in which the oxide powder is inserted into pores of the foaming resin.

The filter chip element may further include 3 to 10 wt % of silicon resin based on the foaming resin.

The filter chip element may further include 2 to 5 wt % of carbon-based material based on the foaming resin.

The filter chip element may further include a reinforcing layer formed on the ferrite composite layer.

The reinforcing layer may be formed of at least one selected from the group consisting of silicon resin, carbon-based material, and a nitride material.

The internal coil patterns may be formed of copper (Cu) or aluminum (Al).

The internal coil patterns may be spaced apart from an outer edge of the ferrite substrate by a distance of 40 to 100 μm.

The ferrite substrate may be formed of iron (Fe) as a main material and use a material having magnetic permeability of 100 or more.

According to another exemplary embodiment of the present invention, there is provided a method of preparing a filter chip element, the method including forming internal coil patterns on a ferrite substrate; impregnating the ferrite substrate whereon the internal coil patterns are formed with foaming resin; semi-hardening the foaming resin to form pores in the foaming resin; inserting oxide powder into the pores of the foaming resin; and completely-hardening the foaming resin into which the oxide powder is inserted.

The foaming resin may include at least one selected from the group consisting of N-isopropyl acrylamide (NIPAM), hydroxyethyl acrylate (HEMA), polyvinylidenefluoride (PVDF), polymethylsilicone (PMS), polycarbosilane (PCS), polyurethane resin, polybutadiene resin, and copolymer thereof.

The semi-hardening of the foaming resin may be performed at a temperature of 80 to 100° C.

The oxide powder may include at least two metal oxides selected from the group consisting of iron (Fe), copper (Cu), nickel (Ni), zinc (Zn), cobalt (Co), and silicon (Si).

The completely-hardening of the foaming resin may be performed at a temperature of 150 to 200° C.

The foaming resin of the ferrite composite layer may further include a reinforcing agent including at least one selected from silicon resin, carbon-based material, and a nitride material.

The method may further include forming a reinforcing layer on the ferrite composite layer.

The reinforcing layer may be formed of at least one selected from the group consisting of silicon resin, carbon-based material, and a nitride material.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view of a general thin film type electromagnetic interference (EMI) device;

FIGS. 2 to 7 are cross-sectional views of structures of filter chip elements according to embodiments of the present invention;

FIG. 8 is a graph showing a measurement result of impedance according to Comparative Example 1; and

FIG. 9 is a graph showing a measurement result of impedance according to Example 1.



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stats Patent Info
Application #
US 20140132366 A1
Publish Date
05/15/2014
Document #
File Date
08/20/2014
USPTO Class
Other USPTO Classes
International Class
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