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Methods for uv-assisted conformal film deposition




Title: Methods for uv-assisted conformal film deposition.
Abstract: Described are methods of making silicon nitride (SiN) materials and other silicon-containing films, including carbon-containing and/or oxygen-containing films such as SiCN (also referred to as SiNC), SiON and SiONC films, on substrates. According to various embodiments, the methods involve electromagnetic radiation-assisted activation of one or more reactants. In certain embodiments, for example, the methods involve ultraviolet (UV) activation of vapor phase amine coreactants. The methods can be used to deposit silicon-containing films, including SiN and SiCN films, at temperatures below about 400° C. ...


USPTO Applicaton #: #20140051262
Inventors: Adrien Lavoie, Bhadri Varadarajan, Jon Henri, Dennis Hausmann


The Patent Description & Claims data below is from USPTO Patent Application 20140051262, Methods for uv-assisted conformal film deposition.




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stats Patent Info
Application #
US 20140051262 A1
Publish Date
02/20/2014
Document #
File Date
12/31/1969
USPTO Class
Other USPTO Classes
International Class
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Drawings
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20140220|20140051262|methods for uv-assisted conformal film deposition|Described are methods of making silicon nitride (SiN) materials and other silicon-containing films, including carbon-containing and/or oxygen-containing films such as SiCN (also referred to as SiNC), SiON and SiONC films, on substrates. According to various embodiments, the methods involve electromagnetic radiation-assisted activation of one or more reactants. In certain embodiments, |
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