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Semiconductor device and a method of increasing a resistance value of an electric fuse


Title: Semiconductor device and a method of increasing a resistance value of an electric fuse.
Abstract: Provided is a semiconductor device having an electric fuse structure which receives the supply of an electric current to be permitted to be cut without damaging portions around the fuse. An electric fuse is electrically connected between an electronic circuit and a redundant circuit as a spare of the electronic circuit. After these circuits are sealed with a resin, the fuse can be cut by receiving the supply of an electric current from the outside. The electric fuse is formed in a fine layer, and is made of a main wiring and a barrier film. The linear expansion coefficient of each of the main wiring and the barrier film is larger than that of each of the insulator layers. The melting point of each of the main wiring and the barrier film is lower than that of each of the insulator layers. ... Browse recent Renesas Electronics Corporation patents
USPTO Applicaton #: #20140021559
Inventors: Takeshi Iwamoto, Kazushi Kono, Masashi Arakawa, Toshiaki Yonezu, Shigeki Obayashi



The Patent Description & Claims data below is from USPTO Patent Application 20140021559, Semiconductor device and a method of increasing a resistance value of an electric fuse.




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stats Patent Info
Application #
US 20140021559 A1
Publish Date
01/23/2014
Document #
14033036
File Date
09/20/2013
USPTO Class
257379
Other USPTO Classes
257529
International Class
01L23/525
Drawings
34


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Semiconductor
Semiconductor Device
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Renesas Electronics Corporation

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