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Polishing pad and method of making the same

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Polishing pad and method of making the same


The disclosure is directed to polishing pads with porous polishing layers, methods of making such polishing pads, and methods of using such pads in a polishing process. The polishing pad includes a compliant layer having first and second opposing sides and a porous polishing layer disposed on the first side of the compliant layer. The porous polishing layer includes a crosslinked network comprising a thermally cured component and a radiation cured component, wherein the radiation cured component and the thermally cured component are covalently bonded in the crosslinked network. The porous polishing layer also includes polymer particles dispersed within the crosslinked network, wherein the polymer particles comprise at least one of thermoplastic polymers or thermoset polymers. The porous polishing layer typically also includes closed cell pores dispersed within the crosslinked network.
Related Terms: Covalent Polymer

Inventors: Naichao Li, William D. Joseph
USPTO Applicaton #: #20130012108 - Class: 451 59 (USPTO) - 01/10/13 - Class 451 
Abrading > Abrading Process >Utilizing Nonrigid Tool

Inventors:

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The Patent Description & Claims data below is from USPTO Patent Application 20130012108, Polishing pad and method of making the same.

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CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of U.S. Provisional Application Nos. 61/288,982, filed Dec. 22, 2009, and 61/422,442, filed Dec. 13, 2010, the disclosures of which are incorporated by reference herein in their entirety.

BACKGROUND

During the manufacture of semiconductor devices and integrated circuits, silicon wafers are iteratively processed through a series of deposition and etching steps to form overlying material layers and device structures. A polishing technique known as chemical mechanical planarization (CMP) may be used to remove surface irregularities (such as bumps, areas of unequal elevation, troughs, and trenches) remaining after the deposition and etching steps, with the objective of obtaining a smooth wafer surface without scratches or depressions (known as dishing), with high uniformity across the wafer surface.

In a typical CMP polishing process, a substrate such as a wafer is pressed against and relatively moved with respect to a polishing pad in the presence of a working liquid that is typically a slurry of abrasive particles in water and/or an etching chemistry. Various CMP polishing pads for use with abrasive slurries have been disclosed, for example, U.S. Pat. Nos. 5,257,478 (Hyde et al.); 5,921,855 (Osterheld et al.); 6,126,532 (Sevilla et al.); 6,899,598 (Prasad); and 7,267,610 (Elmufdi et al.). Fixed abrasive polishing pads are also known, as exemplified by U.S. Pat. No. 6,908,366 (Gagliardi), in which the abrasive particles are generally fixed to the surface of the pad, often in the form of precisely shaped abrasive composites extending from the pad surface. Recently, a polishing pad having a multiplicity of polishing elements extending from a compressible underlayer was described in Int. App. Publ. No. WO/2006057714 (Bajaj). Although a wide variety of polishing pads are known and used, the art continues to seek new and improved polishing pads for CMP, particularly in CMP processes where larger die diameters are being used, or where higher levels of wafer surface flatness and polishing uniformity are required.

SUMMARY

The present disclosure provides porous polishing pads with a polishing layer having a thermally cured component and a radiation cured component and methods of making such polishing pads. Pores are incorporated into the polishing layer through the use of polymer particles. The pores in the porous polishing pads disclosed herein are closed cell pores that generally have lower pore size non-uniformity and smaller pore size than the pores of conventional thermally cured polishing pads. The control over pore size and distribution may be advantageous, for example, for the polishing performance of the polishing pad.

In one aspect, the present disclosure provides a polishing pad comprising:

a compliant layer having first and second opposing sides; and

a porous polishing layer disposed on the first side of the compliant layer, the porous polishing layer comprising: a crosslinked network comprising a thermally cured component and a radiation cured component, wherein the radiation cured component and the thermally cured component are covalently bonded in the crosslinked network; polymer particles dispersed within the crosslinked network; and closed cell pores dispersed within the crosslinked network. In some embodiments, the polishing pad further comprises a support layer interposed between the compliant layer and the porous polishing layer.

In another aspect, the present disclosure provides a method of making a polishing pad, the method comprising:

providing a composition comprising a thermally curable resin composition, a radiation curable resin composition, and polymer particles;

forming pores in the composition;

positioning the composition on a support layer; and

forming a porous polishing layer on the support layer by exposing the composition to radiation to at least partially cure the radiation curable resin composition and heating the composition to at least partially cure the thermally curable resin composition. In some embodiments, the method further comprises adhesively bonding a compliant layer to a surface of the support layer opposite the porous polishing layer.

In a further aspect, the present disclosure provides a method of polishing comprising:



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Previous Patent Application:
Polishing pad and production method therefor, and production method for semiconductor device
Next Patent Application:
Polishing device
Industry Class:
Abrading
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stats Patent Info
Application #
US 20130012108 A1
Publish Date
01/10/2013
Document #
13518475
File Date
12/20/2010
USPTO Class
451 59
Other USPTO Classes
451539, 451532, 451529, 51296
International Class
/
Drawings
6


Covalent
Polymer


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