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Polishing slurry and polishing method therefor


Title: Polishing slurry and polishing method therefor.
Abstract: The present invention provides a polishing technique which enables polishing of silicon carbide, which is difficult to be polished, with high efficiency and high surface accuracy. The present invention relates to a polishing slurry for polishing a substrate, which comprises abrasive particles containing manganese oxide as a main component and in which the content of the abrasive particles is less than 10% by weight based on the polishing slurry. The polishing slurry of the present invention has a pH of preferably 7 or more. It is particularly preferable to use manganese dioxide as abrasive particles. The polishing slurry of the present invention is suitable for a substrate of silicon carbide. ...
USPTO Applicaton #: #20130012102


The Patent Description & Claims data below is from USPTO Patent Application 20130012102, Polishing slurry and polishing method therefor.




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Abrading
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stats Patent Info
Application #
US 20130012102 A1
Publish Date
01/10/2013
Document #
13634939
File Date
11/22/2010
USPTO Class
451 36
Other USPTO Classes
51309
International Class
/
Drawings
2


Your Message Here(14K)


Manganese
Manganese Dioxide
Silicon
Silicon Carbide


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Abrading   Abrading Process   Utilizing Fluent Abradant  

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