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Hydrazine-coordinated cu chalcogenide complex and method of producing the same




Title: Hydrazine-coordinated cu chalcogenide complex and method of producing the same.
Abstract: A hydrazine-coordinated Cu chalcogenide complex obtainable by reacting Cu or Cu2Se and a chalcogen in dimethylsulfoxide in the presence of hydrazine and free of an amine solvent, and adding a poor solvent to the resulting solution or subjecting the resulting solution to concentration and filtration; and a method of producing a hydrazine-coordinated Cu chalcogenide complex, including reacting Cu or Cu2Se and a chalcogen in dimethylsulfoxide in the presence of hydrazine and free of an amine solvent, and adding a poor solvent to the resulting solution or subjecting the resulting solution to concentration and filtration. ...

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USPTO Applicaton #: #20120315210
Inventors: Masaru Kuwahara, Koichi Misumi, Hidenori Miyamoto


The Patent Description & Claims data below is from USPTO Patent Application 20120315210, Hydrazine-coordinated cu chalcogenide complex and method of producing the same.

TECHNICAL FIELD

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The present invention relates to a hydrazine-coordinated Cu chalcogenide complex and a method of producing the same.

BACKGROUND

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ART

In recent years, in consideration of environment, solar cells have been attracting a growing interest. In particular, attention has been drawn to chalcopyrite solar cells which are thin-film solar cells with high photoelectric conversion efficiency, and also CZTS solar cells which have a rare metal such as indium used in a chalcopyrite solar cell substituted with another element, and hence, research and development have been actively conducted.

A chalcopyrite solar cell is produced by forming a light absorbing layer prepared from a chalcopyrite material on a substrate. Representative elements of a chalcopyrite material include copper (Cu), indium (In), gallium (Ga), selenium (Se) and sulfur (S), and representative examples of a light absorbing layer include Cu(In, Ga)Se2 and Cu(In, Ga)(Se, S)2, which are abbreviated as CIGS and CIGSS, respectively. Recently, CZTS solar cell has been studied in which a rare metal indium has been substituted and is composed of, for example, copper (Cu), zinc (Zn), tin (Sn), selenium (Se) and sulfur (S). Representative examples of the light absorbing layer of such a solar cell include Cu2ZnSnSe4, Cu2ZnSnS4 and Cu2ZnSn(S, Se)4.

FIG. 1 is a schematic cross-sectional diagram of an example of a chalcopyrite solar cell or a CZTS solar cell.

As shown in FIG. 1, a chalcopyrite solar cell or a CZTS solar cell 1 has a basic structure in which a first electrode 3, a CIGS or CZTS layer 4, a buffer layer 5, an i-ZnO layer 6 and a second electrode 7 are laminated on a substrate 2 in this order. As the buffer layer, for example, a CdS layer, an ZnS layer and an InS layer are known.

Each of the first electrode 3 and the second electrode 7 has a terminal connected thereto, and each of the terminals is connected to a wiring. In such a chalcopyrite solar cell or a CZTS solar cell 1, an incident light entering in the direction of A is absorbed by the CIGS or CZTS layer 4 to generate an electromotive force, and an electric current flows in the direction of B.

The surface of the second electrode 7 is, for example, covered with an anti-reflection film layer 8 composed of an MgF2 layer for protection.

As a method of forming a CIGS or CZTS layer 4, a sputtering method and a coating method are known. However, in the sputtering method, the size of the apparatus tends to be scaled up, thereby deteriorating the yield. Therefore, diligent studies have been made on the coating method which enables production at a relatively low cost.

Generally, in a coating method of a CIGS layer, elements such as Cu, In, Ga, Se and S are dissolved in a specific solvent to prepare a coating solution, and the coating solution is applied to a substrate by a spin coating method or a dipping method, followed by baking, thereby forming a CIGS layer (see for example, Patent Document 1 and Patent Document 2).

In the preparation of a coating solution, there are known a method in which hydrazine is used as the solvent, and a method in which amine is added as a dissolution promoter instead of using hydrazine.

DOCUMENTS OF RELATED ART Patent Document

[Patent Document 1] U.S. Pat. No. 7,094,651 [Patent Document 2] WO2008/057119 [Patent Document 3] WO2008/063190 [Patent Document 4] U.S. Pat. No. 7,517,718

SUMMARY

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OF THE INVENTION

However, in the preparation of a coating solution, when hydrazine is used as the solvent, a problem has conventionally been raised in terms of safety of the process due to chemical properties (explosiveness) of hydrazine.

In view of these problems, there have been demands for a coating solution which can assure safety of process. However, such a coating solution has not been proposed under these circumstances.

For solving the above-mentioned problems, the present invention employs the following embodiments.

The hydrazine-coordinated Cu chalcogenide complex is obtainable by reacting Cu or Cu2Se and a chalcogen in dimethylsulfoxide in the presence of hydrazine and free of an amine solvent, and adding a poor solvent to the resulting solution or subjecting the resulting solution to concentration and filtration.

Further, the method of producing a hydrazine-coordinated Cu chalcogenide complex according to the present invention includes reacting Cu or Cu2Se and a chalcogen in dimethylsulfoxide in the presence of hydrazine and free of an amine solvent, and adding a poor solvent to the resulting solution or subjecting the resulting solution to concentration and filtration.

In the present invention, a hydrazine-coordinated Cu chalcogenide complex and a DMSO solution are provided which are usable for forming a light-absorbing layer of a chalcopyrite solar cell or a CZTS solar cell. Therefore, when coating is performed in the formation of a light-absorbing layer of a chalcopyrite solar cell or a CZTS solar cell, there is no need to use dangerous hydrazine in the application of the coating solution. As a result, safety of the process in the formation of a light-absorbing layer can be assured.

BRIEF DESCRIPTION OF THE DRAWINGS

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FIG. 1 is a schematic cross-sectional diagram of an example of a chalcopyrite solar cell or a CZTS solar cell.

FIG. 2 is the results of thermogravimetric analysis of the hydrazine-coordinated Cu chalcogenide complex produced in Example 1.

FIG. 3 is the results of X-ray diffraction analysis of the residue obtained from the thermogravimetric analysis of the hydrazine-coordinated Cu chalcogenide complex produced in Example 1.

FIG. 4 is the results of X-ray diffraction analysis following formation of a film in Example 1.

FIG. 5 is the results of X-ray diffraction analysis following formation of a film in Example 2.




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stats Patent Info
Application #
US 20120315210 A1
Publish Date
12/13/2012
Document #
File Date
12/31/1969
USPTO Class
Other USPTO Classes
International Class
/
Drawings
0


Chalcogen Hydrazine

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Tokyo Ohka Kogyo Co., Ltd.


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Chemistry Of Inorganic Compounds   Nitrogen Or Compound Thereof (except Ammonium Salt Of Non-nitrogen Acid)   Hydrogen Containing (e.g., Amide, Imide, Etc.)  

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20121213|20120315210|hydrazine-coordinated cu chalcogenide complex and producing the same|A hydrazine-coordinated Cu chalcogenide complex obtainable by reacting Cu or Cu2Se and a chalcogen in dimethylsulfoxide in the presence of hydrazine and free of an amine solvent, and adding a poor solvent to the resulting solution or subjecting the resulting solution to concentration and filtration; and a method of producing |Tokyo-Ohka-Kogyo-Co-Ltd