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Processes and systems for engineering a barrier surface for copper deposition

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Processes and systems for engineering a barrier surface for copper deposition


An integrated system for processing a substrate in controlled environment to enable deposition of a thin copper seed layer on a surface of a metallic barrier layer of a copper interconnect is provided. The system includes a lab-ambient transfer chamber, a vacuum transfer chamber, a vacuum process module for cleaning an exposed surface of a metal oxide of a underlying metal, a vacuum process module for depositing the metallic barrier layer, and a controlled-ambient transfer chamber filled with an inert gas, wherein at least one controlled-ambient process module is coupled to the controlled-ambient transfer chamber. In addition, the system includes an electroless copper deposition process module used to deposit the thin layer of copper seed layer on the surface of the metallic barrier layer.

Browse recent Lam Research Corporation patents - Fremont, CA, US
Inventors: Yezdi Dordi, John Boyd, Tiruchirapalli Arunagiri, Hyungsuk Alexander Yoon, Fritz C. Redeker, William Thie, Arthur M. Howald
USPTO Applicaton #: #20120269987 - Class: 427539 (USPTO) - 10/25/12 - Class 427 


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The Patent Description & Claims data below is from USPTO Patent Application 20120269987, Processes and systems for engineering a barrier surface for copper deposition.

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stats Patent Info
Application #
US 20120269987 A1
Publish Date
10/25/2012
Document #
File Date
07/24/2014
USPTO Class
Other USPTO Classes
International Class
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