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Phase change memory coding

Title: Phase change memory coding.
Abstract: An integrated circuit phase change memory can be pre-coded by inducing a first resistance state in some cells and the memory, and a second resistance state and some other cells in the memory to represent a data set. The integrated circuit phase change memory is mounted on a substrate after coding the data set. After mounting the integrated circuit phase change memory, the data set is read by sensing the first and second resistance states, and changing cells in the first resistance state to a third resistance state and changing cells in the second resistance state to a fourth resistance state. The first and second resistance states maintain a sensing margin after solder bonding or other thermal cycling process. The third and fourth resistance states are characterized by the ability to cause a transition using higher speed and lower power, suitable for a mission function of a circuit. ... Browse recent Macronix International Co., Ltd, patents
USPTO Applicaton #: #20110317480
Inventors: Hsiang-lan Lung, Ming Hsiu Lee, Yen-hao Shih, Tien-yen Wang, Chao-i Wu

The Patent Description & Claims data below is from USPTO Patent Application 20110317480, Phase change memory coding.

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stats Patent Info
Application #
US 20110317480 A1
Publish Date
Document #
File Date
Other USPTO Classes
438102, 365148, 36518915, 257E21068
International Class

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