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Silicon tab edge mount for a wafer level package




Title: Silicon tab edge mount for a wafer level package.
Abstract: A Micro-ElectroMechanical Systems (MEMS) device having electrical connections (a metallization pattern) available at an edge of the MEMS die. The metallization pattern on the edge of the die allows the die to be mounted on edge with no further packaging, if desired. ...


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USPTO Applicaton #: #20110108935
Inventors: Mark Eskridge


The Patent Description & Claims data below is from USPTO Patent Application 20110108935, Silicon tab edge mount for a wafer level package.

BACKGROUND

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OF THE INVENTION

In order for a Micro-ElectroMechanical Systems (MEMS) sensor to be useful, it must be electrically connected to a system capable of interpreting its signals. It must also be mechanically mounted to the system, either directly or through an intermediate “electronics package” into which it is placed.

Most MEMS dies are laid out with electrical connections on one side (“top”) and mechanical connections on the other (“bottom”). In some cases, the electrical and mechanical attachments to the next level of the system are the same. This is known as “flip chip” die attach. The die is attached to the system on its face or back. A number of possible scenarios using wirebonding, various epoxies, solders, and direct attachments can be used to package the MEMS die in these orientations.

Sometimes it is desirable to mount MEMS sensors on one “edge” of the die. This can be because: The die senses acceleration or rotation (accelerometer or gyro) and all three axes of motion are required for the system; Mounting stress on the edge of the die is better for performance than on the top or bottom; Heat from the system is best applied to a die edge for a performance reason; and The system has geometric requirements for this configuration (space savings).

It is also often important when packaging MEMS into a system to make it as small as possible, avoiding secondary packaging where possible to reduce size, mass, and cost.

SUMMARY

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OF THE INVENTION

The present invention provides a Micro-ElectroMechanical Systems (MEMS) device having electrical connections (a metallization pattern) available at an edge of the MEMS die. The metallization pattern on the edge of the die allows the die to be mounted on edge with no further packaging, if desired.

BRIEF DESCRIPTION OF THE DRAWINGS

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Preferred and alternative embodiments of the present invention are described in detail below with reference to the following drawings:

FIG. 1 is an x-ray perspective view of a MEMS die formed in accordance with an embodiment with the present invention;

FIG. 2 is a partial perspective view of the MEMS die shown in FIG. 1;

FIG. 3 is a partial side view of the MEMS die shown in FIG. 1;

FIG. 4 is a perspective view of the MEMS die shown in FIG. 1; and

FIG. 5 is a perspective view of a system with a MEMS die formed in accordance with an embodiment with the present invention mounted thereon.

DETAILED DESCRIPTION

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OF THE INVENTION

The present invention provides for systems and methods for electrically connecting a Micro-ElectroMechanical Systems (MEMS) die. With a proper metallization pattern on the edge of the MEMS die, the die is then mounted on edge with no further packaging, if desired.

FIG. 1 shows a MEMS die 20 formed according to an embodiment of the present invention. The MEMS die 20 is a sandwich of a silicon layer 28 between two plates of nonconductive borosilicate glass 24, 26. The glass plates 24, 26 are preferably anodically bonded to a partial seal ring 32. The glass plates 24, 26 are transparent for illustrative purposes.

The glass plates 24, 26 are thicker compared to the silicon layer 28. In one embodiment, the silicon layer 28 is a reactive ion etched pattern and is attached to the glass plates 24, 26 using an anodic bond.

The silicon layer 28 includes a MEMS device 30 that is located at approximately the center of the die 20. Electrical leads 36 extend from the MEMS device 30 to conductive silicon tabs 34 located at the edge of the die 20. In one embodiment, some of the leads 36 are located on the lower glass plate 26 and some on the upper plate 24. The leads 36 connect to either active metal surfaces or sections of the MEMS device 30.

The tabs 34 are formed in the same operation and are in the same layer as the MEMS device 30. On a wafer during fabrication, the tabs 34 extend into a dicing street or even across it to be shared with a neighbor die. During singulation of the wafer, the silicon tabs 34 are cut clean and flush with the glass surface (edge of the die 20).

Electrical leads (metal traces) 40-1, 40-2 are attached to the edge of the plates 24, 26 and exposed faces of the silicon tabs 34. Metallic bumps 42-1, 42-2 are bonded to ends of the leads 40-1, 40-2.




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stats Patent Info
Application #
US 20110108935 A1
Publish Date
05/12/2011
Document #
File Date
12/31/1969
USPTO Class
Other USPTO Classes
International Class
/
Drawings
0




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Active Solid-state Devices (e.g., Transistors, Solid-state Diodes)   Responsive To Non-electrical Signal (e.g., Chemical, Stress, Light, Or Magnetic Field Sensors)   Physical Deformation   Strain Sensors  

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20110512|20110108935|silicon tab edge mount for a wafer level package|A Micro-ElectroMechanical Systems (MEMS) device having electrical connections (a metallization pattern) available at an edge of the MEMS die. The metallization pattern on the edge of the die allows the die to be mounted on edge with no further packaging, if desired. |Honeywell-International-Inc
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