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Dual temperature heater




Title: Dual temperature heater.
Abstract: A method and apparatus for heating a substrate in a chamber are provided. an apparatus for positioning a substrate in a processing chamber. In one embodiment, the apparatus comprises a substrate support assembly having a support surface adapted to receive the substrate and a plurality of centering members for supporting the substrate at a distance parallel to the support surface and for centering the substrate relative to a reference axis substantially perpendicular to the support surface. The plurality of the centering members are movably disposed along a periphery of the support surface, and each of the plurality of centering members comprises a first end portion for either contacting or supporting a peripheral edge of the substrate. ...


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USPTO Applicaton #: #20110034034
Inventors: Dale R. Du Bois, Juan Carlos Rocha-alvarez, Sanjeev Baluja, Ganesh Balasubramanian, Lipyeow Yap, Jianhua Zhou, Thomas Nowak


The Patent Description & Claims data below is from USPTO Patent Application 20110034034, Dual temperature heater.

CROSS-REFERENCE TO RELATED APPLICATIONS

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This application claims benefit of U.S. provisional patent application Ser. No. 61/232,172 (Attorney Docket No. 14440L), filed Aug. 7, 2009, which is herein incorporated by reference in its entirety.

BACKGROUND

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OF THE INVENTION

1. Field of the Invention

Embodiments of the present invention generally relate to apparatus and methods for processing semiconductor substrates. More particularly, embodiments of the present invention relate to an apparatus and methods for heating a substrate in a chamber.

2. Description of the Related Art

The effectiveness of a substrate fabrication process is often measured by two related and important factors, which are device yield and the cost of ownership (CoO). These factors are important since they directly affect the cost to produce an electronic device and thus a device manufacturer's competitiveness in the market place. The CoO, while affected by a number of factors, is greatly affected by the system and chamber throughput, or simply the number of substrates per hour processed using a desired processing sequence.

During certain substrate processing sequences, such as, for example, chemical vapor deposition processes (CVD) or plasma enhanced chemical vapor deposition processes (PECVD), it may be desirable to pre-treat a substrate prior to performing a deposition process. In certain pre-treatment processes, the substrate may be heated, for example, using an anneal process, to a first temperature prior to the deposition process. During the deposition process, the substrate is heated to a second temperature different than the first temperature. For many deposition processes, the substrate is placed on a substrate support comprising a heater. This heater is used to heat the substrate to both the first temperature and the second temperature. When there is some variance between the first temperature and the second temperature, for example, when the second temperature is higher than the first temperature, there is a delay between the pre-treatment process and the deposition process so that the temperature of the heater may be increased from the first temperature to the second temperature. This delay leads to an overall increase in substrate processing time and a corresponding decrease in device yield.

Therefore there is a need for an apparatus and process that can position and heat a substrate in a processing chamber in a cost-effective and accurate manner.

SUMMARY

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OF THE INVENTION

Embodiments of the present invention generally relate to apparatus and methods for processing semiconductor substrates. More particularly, embodiments of the present invention relate to an apparatus and methods for heating a substrate in a chamber. In one embodiment, an apparatus for positioning a substrate in a processing chamber is provided. The apparatus comprises a substrate support assembly having a support surface adapted to receive the substrate and a plurality of centering members for supporting the substrate at a distance parallel to the support surface and for centering the substrate relative to a reference axis substantially perpendicular to the support surface. The plurality of centering members are movably disposed along a periphery of the support surface, and each of the plurality of centering members comprises a first end portion for either contacting or supporting a peripheral edge of the substrate, the first end portion comprising an upper end portion extending above the support surface of the substrate support for releasably contacting the peripheral edge of the substrate, a support tab positioned on the upper end portion, and a substrate support notch formed by an intersection of the support tab and the upper end portion, for supporting the substrate. The first end portion is movable between a first position and a second position. Movement from the first position to the second position causes the centering member to release the peripheral edge of the substrate and movement from the second position to the first position causes the centering member to push the substrate in a direction toward the reference axis or positions the centering members for supporting the substrate.

In another embodiment a method for centering a substrate in a processing chamber is provided. A substrate support having an embedded heater and a heated support surface adapted to receive a substrate is provided. A plurality of centering members disposed along a circle centered at a reference axis substantially perpendicular to the support surface is provided. Each centering member comprises an end portion configured to contact a peripheral edge of the substrate, and the end portion is radially movable towards and away from the reference axis. A support tab is positioned on the end portion and a substrate support notch is formed at an intersection of the support tab and the end portion, for supporting the substrate at a distance from the support surface of the substrate support. The substrate is positioned on the support tabs of each of the plurality of centering members. A pre-treatment process is performed on the substrate at a first processing temperature of the substrate. The substrate is removed from the support tabs. The end portion of each centering member is moved radially outward and away from the reference axis. The substrate is placed on the substrate support, wherein the substrate and the centering members do not contact. The end portion of each centering member is moved radially inwards to contact a peripheral edge of the substrate for centering the substrate. The substrate is positioned with the end portions of the centering members. A deposition process is performed on the substrate at a second processing temperature of the substrate, wherein the first processing temperature is different than the second processing temperature.

BRIEF DESCRIPTION OF THE DRAWINGS

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So that the manner in which the above recited features of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.

FIG. 1 is a schematic cross-sectional view of one embodiment of a PECVD system according to embodiments described herein;

FIG. 2A is a partially enlarged cross-sectional view of one embodiment of a centering finger of FIG. 1 in a supporting position;

FIG. 2B is a partially enlarged cross-sectional view of one embodiment of a centering finger of FIG. 1 in a centering position;

FIG. 2C is a partially enlarged cross-sectional view of one embodiment of a centering finger of FIG. 1 in a disengaging position;

FIG. 3A is a simplified overhead view of one embodiment of a centering mechanism using three centering fingers to support a substrate;

FIG. 3B is a simplified overhead view of one embodiment of a centering mechanism using three centering fingers to center a substrate;

FIG. 4 is a cross-sectional view showing one embodiment of a centering finger having an eccentric weighed portion;

FIG. 5A is a partial cross-sectional view illustrating one embodiment of a centering finger in a supporting position;

FIG. 5B is a partial cross-sectional view illustrating one embodiment of a centering finger in a centering position;

FIG. 5C is a partial cross-sectional view illustrating one embodiment of a centering finger in a disengaging position;

FIG. 6 is a partial cross-sectional view illustrating one embodiment of a centering finger; and

FIG. 7 is a partial cross-sectional view illustrating one embodiment of a centering finger.

To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements disclosed in one embodiment may be beneficially utilized on other embodiments without specific recitation.

DETAILED DESCRIPTION

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Embodiments described herein relate to an apparatus and method for heating and centering a substrate that are applicable for various chamber systems configured to apply diverse semiconductor processes on a substrate. Although the embodiments are exemplarily described for use in a deposition chamber, some embodiments may be applicable for other types of process chambers that necessitate heating and centering of a substrate. Examples include, without limitations, loadlock chambers, testing chambers, deposition chambers, etching chambers, and thermal treatment chambers.

FIG. 1 is a schematic cross-sectional view of one embodiment of a PECVD system 100 having a centering mechanism 140. The system 100 includes a process chamber 102 coupled to a gas source 104. The process chamber 102 has walls 106 and a bottom 108 that partially define a process volume 110. The process volume 110 may be accessed through a port 101 formed in the walls 106 that facilitate movement of a substrate 112 into and out of the process chamber 102. The walls 106 and bottom 108 may be fabricated from a unitary block of aluminum or other material compatible with processing. The walls 106 support a lid assembly 114. The process chamber 102 may be evacuated by a vacuum pump 116.




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stats Patent Info
Application #
US 20110034034 A1
Publish Date
02/10/2011
Document #
File Date
12/31/1969
USPTO Class
Other USPTO Classes
International Class
/
Drawings
0




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Semiconductor Device Manufacturing: Process   Coating Of Substrate Containing Semiconductor Region Or Of Semiconductor Substrate  

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20110210|20110034034|dual temperature heater|A method and apparatus for heating a substrate in a chamber are provided. an apparatus for positioning a substrate in a processing chamber. In one embodiment, the apparatus comprises a substrate support assembly having a support surface adapted to receive the substrate and a plurality of centering members for supporting |Applied-Materials-Inc