Plasma processing apparatus and semiconductor element manufactured by such apparatus

The present invention relates to a plasma processing apparatus, and more particularly, relates to a plasma processing apparatus characterized by a gas piping structure feeding gas to a plasma processing reaction chamber, and to a semiconductor device manufactured with the plasma processing apparatus.

A plasma processing apparatus is an apparatus for generating a plasma between electrodes and plasma-processing a non-processed object which is rested on a cathode electrode or an anode electrode, by introducing a plurality of types of gases into a plasma processing reaction chamber including the cathode/anode electrode pair, regulating a pressure of a mixed gas in the reaction chamber to be generally constant by a pressure adjustment valve provided in an exhaust system, and applying a high voltage between the electrodes.

A conventional plasma processing apparatus is described based on the drawings. FIG. 6 is a diagram of a gas piping system of a conventional plasma processing apparatus. The structure is such that a mixing box 7 for mixing a plurality of gases A and B before introducing the gases into a reaction chamber 1 is provided, and gases A and B are mixed in mixing box 7 and then introduced into reaction chamber 1. FIG. 7 is a cross sectional view of the mixing box disclosed in Patent Document 1. It is shown that the shape of mixing box 7 is cylindrical and pressure loss can be reduced. Patent Document 1: Japanese Utility Model Laying-Open No. 64-26373

When the above-mentioned mixing box is used, however, it is necessary to provide the mixing box for every reaction chamber, leading to a problem of a complicated configuration of the gas piping system.

The present invention was made in view of the above-mentioned issue, and an object of the present invention is to implement mixing of a plurality of gases by a simple gas introducing piping, in a plasma processing apparatus for performing plasma processing by introducing a plurality of types of gases.

In order to achieve the above-mentioned object, the present invention provides a plasma processing apparatus including a plasma processing reaction chamber, a diluent gas introducing tube introducing a diluent gas, having one end connected to the plasma processing reaction chamber, a diluent gas feeding unit connected to the other end of the diluent gas introducing tube, for feeding a diluent gas, a reaction gas introducing tube introducing a reaction gas, having one end connected to the dilution gas introducing tube at a location closer to the diluent gas feeding unit with respect to the midpoint of the diluent gas introducing tube, and a reaction gas feeding unit connected to the other end of the reaction gas introducing tube, for feeding the reaction gas at a flow rate smaller than a flow rate of the diluent gas.

According to the present configuration, when a plurality of types of gases are introduced into the plasma processing reaction chamber, the plurality of types of gases can be fully mixed and the gas introducing piping can be of a simpler configuration.

Moreover, in the present invention, the reaction gas introducing tube is desirably connected in the proximity of the diluent gas feeding unit.

In addition, in the present invention, the reaction gas includes a plurality of types of gases, each of which is a material gas or a doping gas, and a material gas introducing tube is desirably connected to the diluent gas introducing tube at a location closer to the plasma processing reaction chamber than a location where a doping gas introducing tube is connected.

Furthermore, in the present invention, an inner diameter of the diluent gas introducing tube is desirably larger than an inner diameter of the reaction gas introducing tube.

In the present invention, there are provided a plurality of sets of the plasma processing reaction chamber, the diluent gas introducing tube, the diluent gas feeding unit, the reaction gas introducing tube, and the reaction gas feeding unit, and it is desirable that the diluent gas feeding units are included in one vessel and the reaction gas feeding units are included in one vessel.

In addition, a semiconductor device manufactured with the plasma processing apparatus of the present invention is provided.

In the present invention, when the flow rate of the diluent gas is larger than the flow rate of the reaction gas, the reaction gas introducing tube is connected to the diluent gas introducing tube, which connects the diluent gas feeding unit and the plasma processing reaction chamber, at a location closer to the diluent gas feeding unit so that the diluent gas and the reaction gas can be fully mixed in the diluent gas introducing tube and the gas feed piping can be of a simpler configuration.

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