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06/25/09 - USPTO Class 313 |  50 views | #20090160314 | Prev - Next | About this Page  313 rss/xml feed  monitor keywords

Emissive structures and systems

USPTO Application #: 20090160314
Title: Emissive structures and systems
Abstract: An emitter is disclosed. The emitter includes a base layer, where the base layer includes an emissive region of nanocavities and wherein the base layer includes hafnium and nitrogen. A radiation source including the emitter is also disclosed. (end of abstract)



Agent: General Electric Company Global Research - Niskayuna, NY, US
Inventors: Sergiy Zalyubovskiy, Sergiy Zalyubovskiy, William Paul Minnear, William Paul Minnear, Gregory John Parker, Gregory John Parker, Vikas Midha, Vikas Midha
USPTO Applicaton #: 20090160314 - Class: 313498 (USPTO)

Emissive structures and systems description/claims


The Patent Description & Claims data below is from USPTO Patent Application 20090160314, Emissive structures and systems.

Brief Patent Description - Full Patent Description - Patent Application Claims
  monitor keywords BACKGROUND

The presently claimed invention relates to emissive structures and related systems.

Conventional tungsten filament lamps exhibit low luminous efficacy (˜17 1 m/W for a 120 V, 750 h, 100 W lamp) compared to plasma discharge or fluorescent lighting sources. In tungsten incandescent lamps only 5-10% of radiation is emitted in the visible spectral range (390-750 nm). The rest is emitted as thermal infrared radiation, primarily in the 750-4000 nm spectral range. The efficiency of the incandescent lamp can be improved by simultaneous enhancement of the radiation emitted in the visible and suppression of the infrared radiation.

Periodic photonic lattices have the unique property that radiation of specific wavelengths cannot propagate through the lattice. Enhanced efficiency in visible wavelengths can be achieved if the photonic lattice is configured to increase visible absorption and/or suppress IR emission. Unfortunately, many of the photonic lattices are limited to low temperature, less than 1000 degrees K, operation due to thermal instabilities.

Therefore, it would be advantageous to develop high temperature emitters with tailored emission properties.

BRIEF DESCRIPTION

In accordance with one aspect of the disclosure, an emitter is disclosed. The emitter includes a base layer, wherein the base layer includes an emissive region of nanocavities and wherein the base layer includes hafnium and nitrogen.

In accordance with another aspect of the disclosure, a radiation source is disclosed. The radiation source includes a base, a light-transmissive envelope coupled to the base, and an emitter including a base layer, wherein the base layer includes an emissive region of a periodic two-dimensional array of nanocavities and wherein the base layer includes hafnium and nitrogen.

DRAWINGS

These and other features, aspects, and advantages of the present invention will become better understood when the following detailed description is read with reference to the accompanying drawings in which like characters represent like parts throughout the drawings, wherein:

FIG. 1 illustrates a schematic view of an emitter in accordance with one embodiment of the present invention;

FIG. 2 illustrates schematic cross-sectional view of an emissive region in accordance with one embodiment of the present invention;

FIG. 3 illustrates schematic cross-sectional view of an emissive region in accordance with another embodiment of the present invention;

FIG. 4 illustrates schematic a top view of an emissive region with a hexagonal lattice of nanocavities in accordance with one embodiment of the present invention;

FIG. 5 illustrates schematic top view of an emissive region with a simple square lattice of nanocavities in accordance with one embodiment of the present invention;

FIG. 6 is a micrograph of a hafnium nitride emitter including a periodic array of nanocavities in accordance with one embodiment of the present invention;

FIG. 7 illustrates measure variation in emissivity with wavelength for a tungsten emitter, a hafnium nitride emitter and a hafnium nitride periodic array of nanocavities in accordance with one embodiment of the present invention;

FIG. 8 illustrates the variation with wavelength of the measured ratio of hafnium nitride nanocavity emissivity with hafnium nitride base layer emissivity in accordance with one embodiment of the present invention;

FIG. 9 illustrates a comparative plot between calculated and measured spectral emissivity for varying cavity diameters in accordance with one embodiment of the present invention;

FIGS. 10-14 illustrate examples of emitter filaments in accordance with embodiments of the present invention;



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Previous Patent Application:
Light-emitting substrate and display apparatus using the same
Next Patent Application:
Organic electroluminescence material and element using the same
Industry Class:
Electric lamp and discharge devices

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