Process of forming an electronic device including depositing a conductive layer over a seed layer

1. Field of the Disclosure

The present disclosure relates to processes of electroplating conductive layers and more particularly to processes of electroplating conductive layers using an electroplating tool.

2. Description of the Related Art

Electronic devices can include conductive layers that are deposited by electroplating. One or more compounds can be added to an electroplating solution to affect the electroplating of a conductive layer over a patterned layer and within openings in the patterned layer. For example, a suppressor can be used to the reduce local electroplating rate along the upper corners of the openings, an accelerator can be added to increase the local electroplating rate within the openings, and a leveler can be added to reduce the local electroplating rate along a relatively flat, exposed surface. When all three compounds are used, electroplating can be performed using direct current during all of the electroplating.

A leveler is optional and may not be used. When a leveler is not used in the electroplating solution, an alternating current is typically used. The process without the leveler has problems that are better understood with respect to the illustrations in FIGS. 1 and 2. FIG. 1 includes an illustration of a substrate 12 that includes openings 15 and 16, and a seed layer 14 that lies along the surface of the substrate 12 and within the openings 15 and 16. A barrier layer can be used and would lie between the substrate 12 and the seed layer 14, but the barrier layer is not illustrated to simplify understanding. The seed layer 14 lies along the upper exposed regions 112 of the substrate, the corners of the openings 18, the sides of the openings 114, and the bottoms 110 of the openings.

FIG. 2 includes an illustration after electroplating a conductive layer 22 over the seed layer 12. One or more problems may occur during electroplating. For example, the accelerator can increase the deposition rate along the bottoms of the openings 110 relative to another location, such as the corners 18 of openings 15 and 16. As the opening 15 fills, the accelerator can remain active and continue to enhance the deposition rate through substantially the entire electroplating process. After the opening 15 has been filled, the accelerator can continue to affect the deposition rate above the opening, and a mound 24 can be formed as illustrated near the left-hand side in FIG. 2.

A pulse reverse waveform can be used to help control the mounding without the complexity of adding and controlling the leveler to the electroplating solution. However, when the current flow is reversed, a portion of the electroplated layer is removed. Again referring to FIG. 1, the seed layer 14 has a relatively thinner portion along the sidewalls 114, where the resistance of the conductive layer 14 may be higher than another location where the seed layer 114 is relatively thicker. Such differences in resistance can shift the electroplating and deplating rates differently at different locations along the seed layer 14, and thus contribute to void formation when a pulse reverse waveform is used. Referring to the opening 16 to the right-hand side of FIG. 2, a void 26 has been formed within the opening 16 during electroplating. After the electroplating, a workpiece may have mounds, voids, or a combination of mounds and voids.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure may be better understood, and its numerous features and advantages made apparent to those skilled in the art by referencing the accompanying drawings.

FIG. 1 includes an illustration of a cross-sectional view of a workpiece including a substrate, openings in the substrate, and a seed layer over the substrate. (Prior art)

FIG. 2 includes an illustration of a cross section of the workpiece of FIG. 1 after electroplating a conductive layer within the openings. (Prior art)

FIG. 3 includes an illustration of a cross-sectional view of a workpiece after forming an opening in an insulating layer overlying a substrate to expose a conductive portion of the substrate.

FIG. 4 includes an illustration of a cross-sectional view of the workpiece of FIG. 3 after forming a barrier layer and a seed layer.

FIG. 5 includes an illustration of a schematic diagram of the workpiece of FIG. 4 within an electroplating tool.

FIG. 6 includes an illustration of a circuit within a controller of the electroplating tool of FIG. 5.

FIG. 7 includes an illustration of a cross sectional view of the workpiece of FIG. 5 when forming a first portion of a conductive layer over the seed layer.

FIG. 8 includes an illustration of a cross sectional view of the workpiece of FIG. 7 when forming a second portion of the conductive layer.

FIG. 9 includes an illustration of a cross sectional view of the workpiece of FIG. 8 after removing the workpiece, including the conductive layer, from the electroplating tool.

FIG. 10 includes an illustration of a cross sectional view of the workpiece of FIG. 9 after removing portions of the barrier, seed, and conductive layers.

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