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Multi-region processing system and heads

Multi-region processing system and heads description/claims

This application claims the benefit of U.S. Application Ser. No. 60/970,500 filed Sep. 6, 2007, which is incorporated by reference in its entirety for all purposes.

Semiconductor processing operations include forming layers through deposition processes as well as removing layers, defining features (e.g., etch), preparing layers (e.g., cleans), doping or other processes that do not require the formation of a layer on the substrate. In addition, similar processing techniques apply to the manufacture of integrated circuits (IC) semiconductor devices, flat panel displays, optoelectronics devices, data storage devices, magneto electronic devices, magneto optic devices, packaged devices, and the like. As feature sizes continue to shrink, improvements, whether in materials, unit processes, or process sequences, are continually being sought for the deposition processes. However, semiconductor companies conduct R&D on full wafer processing through the use of split lots, as the deposition systems are designed to support this processing scheme. This approach has resulted in ever escalating R&D costs and the inability to conduct extensive experimentation in a timely and cost effective manner. [00031 While gradient processing has attempted to provide additional information, the gradient processing suffers from a number of shortcomings. Gradient processing relies on defined non-uniformity which is not indicative of a conventional processing operation and therefore cannot mimic the conventional processing. In addition, under gradient processing, a moving mask or shutter is generally used to deposit different amounts of material (or dopant) across the entire substrate or a portion of the substrate. This approach is also used for a deposition system having a carousel of targets which may or may not be used for co-sputtering purposes. In each of these systems, the uniformity of the region being deposited, as well as cross contamination issues when performing more than one deposition process render these techniques relatively ineffective for combinatorial processing.

Thus, an improved technique for accommodating the evaluation of multiple different process variations on a single substrate is provided to more efficiently evaluate the viability of different materials, unit processes, or process sequences.

Embodiments of the present invention provide a deposition system and method for combinatorial processing. Several inventive embodiments of the present invention are described below.

In one aspect of the invention, a deposition system having a radially articulating process head disposed within the deposition system is provided. The radially articulating process head is capable of depositing a layer of material onto regions of a substrate. In one embodiment, the regions are site isolated regions of the substrate. The deposition system may include multiple radially articulating deposition heads disposed over a substrate surface. In order to have access to the entire substrate surface, the support on which the substrate rests is configured to rotate or linearly move the substrate. The process head is capable of being used for cold plasma operations where a base of the depositions head acts as a cathode and a shield surrounding a sidewall extending from the base acts as an anode. In another embodiment, a showerhead of the deposition head is adjustable relative to a distance from a substrate surface. That is, the showerhead is adjustable in a z-direction independent of the movement of the deposition head in order to adjust a process volume.

In another aspect of the invention, a process head has concentrically placed conduits configured to deliver a deposition fluid to a surface of a substrate through an inner conduit and provide exhaust for the deposition fluid through a cavity defined between an outer wall of the first conduit and an inner wall of the second conduit. In one embodiment, the bottom surface of the inner conduit and the bottom surface of the second conduit are co-planar. The process head optionally includes a third conduit surrounding the second conduit. The third conduit provides a fluid barrier preventing the deposition fluid from flowing outside a perimeter of the third conduit. In one embodiment, the fluid acting as the fluid barrier is exhausted through the second conduit. The first, second and third conduits may be concentric around a common axis.

In yet another aspect of the invention, methods for site isolated deposition are provided. The methods deposit regions of material onto a substrate through the process heads described herein. In one embodiment, a gaseous deposition fluid flows through an inner conduit disposed over a portion of a substrate. Contemporaneously, a vacuum may be applied to a defined cavity surrounding the inner conduit to withdraw fluid across a bottom surface of the inner conduit and into the defined cavity. A containment fluid may optionally flow through an outer conduit surrounding both the inner conduit and the region encompassing the inner conduit in one embodiment. A film is deposited onto the portion or region of the substrate and this may be repeated for another portion or region of the substrate. In another embodiment, a method for depositing a film on a site isolated region of a substrate is provided. In this embodiment, a showerhead within a showerhead assembly is moveable so as to adjust a volume of a processing region defined between the showerhead assembly and the site isolated region of the substrate. A deposition fluid flows through the adjusted showerhead to deposit a film on the site isolated region of the substrate. In one embodiment, excess deposition fluid and deposition by-products are removed by providing vacuum to a confined area surrounding the showerhead assembly. Accordingly, through the embodiments described herein multiple sites on a substrate may be combinatorially processed, either in parallel, serially, or a combination of parallel and serially, to provide data on alternative process sequences, material, process parameters, etc.

Other aspects of the invention will become apparent from the following detailed description, taken in conjunction with the accompanying drawings, illustrating by way of example the principles of the invention.

The present invention will be readily understood by the following detailed description in conjunction with the accompanying drawings, and like reference numerals designate like structural elements.

FIG. 1 is a simplified schematic diagram illustrating a processing chamber in accordance with one embodiment of the invention.

FIG. 2 is a simplified schematic diagram showing additional details for movement of the articulating head in accordance with one embodiment of the invention.

FIG. 3 is a top view of the chamber of FIG. 2 in accordance with one embodiment of the invention.

FIG. 4A is a simplified schematic diagram of a system having a rotatable processing head and a moveable substrate support in accordance with one embodiment of the invention.

FIG. 4B is a simplified schematic diagram illustrating one exemplary combinatorial region pattern enabled through the embodiment of FIG. 4A

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