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Semiconductor device




Title: Semiconductor device.
Abstract: A sidewall spacer structure is formed adjacent to a gate structure whereby a material forming an outer surface of the sidewall spacer structure contains nitrogen. Subsequent to its formation the sidewall spacer structure is annealed to harden the sidewall spacer structure from a subsequent cleaning process. An epitaxial layer is formed subsequent to the cleaning process. ...


- Austin, TX, US
USPTO Applicaton #: #20090032888
Inventors: William G. En, Thorsten Kammler, Eric N. Paton, Paul R. Besser, Simon Siu-sing Chan


The Patent Description & Claims data below is from USPTO Patent Application 20090032888, Semiconductor device.

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stats Patent Info
Application #
US 20090032888 A1
Publish Date
02/05/2009
Document #
File Date
12/31/1969
USPTO Class
Other USPTO Classes
International Class
/
Drawings
0




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Advanced Micro Devices, Inc.



Active Solid-state Devices (e.g., Transistors, Solid-state Diodes)   Field Effect Device   Having Insulated Electrode (e.g., Mosfet, Mos Diode)   Including Lightly Doped Drain Portion Adjacent Channel (e.g., Lightly Doped Drain, Ldd Device)  

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20090205|20090032888|semiconductor device|A sidewall spacer structure is formed adjacent to a gate structure whereby a material forming an outer surface of the sidewall spacer structure contains nitrogen. Subsequent to its formation the sidewall spacer structure is annealed to harden the sidewall spacer structure from a subsequent cleaning process. An epitaxial layer is |Advanced-Micro-Devices-Inc
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